High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Sohn, Jung Inn; Cha, Seung Nam; Whang, Dongmok; Kim, Jong Min; Kang, Dae Joon

2014-05-21

We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.

Brushless exciters using a high temperature superconducting field winding

DOEpatents

Garces, Luis Jose [Schenectady, NY; Delmerico, Robert William [Clifton Park, NY; Jansen, Patrick Lee [Scotia, NY; Parslow, John Harold [Scotia, NY; Sanderson, Harold Copeland [Tribes Hill, NY; Sinha, Gautam [Chesterfield, MO

2008-03-18

A brushless exciter for a synchronous generator or motor generally includes a stator and a rotor rotatably disposed within the stator. The rotor has a field winding and a voltage rectifying bridge circuit connected in parallel to the field winding. A plurality of firing circuits are connected the voltage rectifying bridge circuit. The firing circuit is configured to fire a signal at an angle of less than 90.degree. or at an angle greater than 90.degree.. The voltage rectifying bridge circuit rectifies the AC voltage to excite or de-excite the field winding.

Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy

NASA Astrophysics Data System (ADS)

Tezuka, N.; Oikawa, S.; Matsuura, M.; Sugimoto, S.; Nishimura, K.; Irisawa, T.; Nagamine, Y.; Tsunekawa, K.

2018-05-01

The authors investigated the voltage control of a magnetic anisotropy field for perpendicular-magnetic tunnel junctions (p-MTJs) with low and high resistance-area (RA) products and for synthetic antiferromagnetic free and pinned layers. It was found that the sample with low RA products was more sensitive to the applied bias voltage than the sample with high RA products. The bias voltage effect was less pronounced for our sample with the synthetic antiferromagnetic layer for high RA products compared to the MTJs with single free and pinned layers.

Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

NASA Technical Reports Server (NTRS)

Adell, Philippe C.; Mojarradi, Mohammad; DelCastillo, Linda Y.; Vo, Tuan A.

2011-01-01

A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

High resolution separations of charge variants and disulfide isomers of monoclonal antibodies and antibody drug conjugates using ultra-high voltage capillary electrophoresis with high electric field strength.

PubMed

Henley, W Hampton; He, Yan; Mellors, J Scott; Batz, Nicholas G; Ramsey, J Michael; Jorgenson, James W

2017-11-10

Ultra-high voltage capillary electrophoresis with high electric field strength has been applied to the separation of the charge variants, drug conjugates, and disulfide isomers of monoclonal antibodies. Samples composed of many closely related species are difficult to resolve and quantify using traditional analytical instrumentation. High performance instrumentation can often save considerable time and effort otherwise spent on extensive method development. Ideally, the resolution obtained for a given CE buffer system scales with the square root of the applied voltage. Currently available commercial CE instrumentation is limited to an applied voltage of approximately 30kV and a maximum electric field strength of 1kV/cm due to design limitations. The instrumentation described here is capable of safely applying potentials of at least 120kV with electric field strengths over 2000V/cm, potentially doubling the resolution of the best conventional CE buffer/capillary systems while decreasing analysis time in some applications. Separations of these complex mixtures using this new instrumentation demonstrate the potential of ultra-high voltage CE to identify the presence of previously unresolved components and to reduce analysis time for complex mixtures of antibody variants and drug conjugates. Copyright © 2017 Elsevier B.V. All rights reserved.

Removal of phenol by activated alumina bed in pulsed high-voltage electric field.

PubMed

Zhu, Li-nan; Ma, Jun; Yang, Shi-dong

2007-01-01

A new process for removing the pollutants in aqueous solution-activated alumina bed in pulsed high-voltage electric field was investigated for the removal of phenol under different conditions. The experimental results indicated the increase in removal rate with increasing applied voltage, increasing pH value of the solution, aeration, and adding Fe2+. The removal rate of phenol could reach 72.1% when air aeration flow rate was 1200 ml/min, and 88.2% when 0.05 mmol/L Fe2+ was added into the solution under the conditions of applied voltage 25 kV, initial phenol concentration of 5 mg/L, and initial pH value 5.5. The addition of sodium carbonate reduced the phenol removal rate. In the pulsed high-voltage electric field, local discharge occurred at the surface of activated alumina, which promoted phenol degradation in the thin water film. At the same time, the space-time distribution of gas-liquid phases was more uniform and the contact areas of the activated species generated from the discharge and the pollutant molecules were much wider due to the effect of the activated alumina bed. The synthetical effects of the pulsed high-voltage electric field and the activated alumina particles accelerated phenol degradation.

Dielectric Breakdown Characteristics of Oil-pressboard Insulation System against AC/DC Superposed Voltage

NASA Astrophysics Data System (ADS)

Ebisawa, Yoshihito; Yamada, Shin; Mori, Shigekazu; Ikeda, Masami

This paper describes breakdown characteristics of an oil-pressboard insulation system to a superposition voltage of AC and DC voltages. Although AC electric field is decided by the ratio of the relative permittivity of a pressboard and insulating oil, DC electric field is decided by ratio α of volume resistivities. From the measurement in this study, 13—78 and 1.8—5.7 are obtained as the volume resistivity ratios α at temperature of 30°C and 80°C, respectively. The breakdown voltages against AC, DC, and those superposition voltages are surveyed to insulation models. In normal temperature, the breakdown voltage to the superposition voltage of AC and DC is determined by AC electric field applied to the oil duct. Since the α becomes as low as 2-3 at temperature of 80°C, AC and DC voltages almost equally contribute to the electric field of the oil duct as a result. That is, it became clear that superposed DC voltage boosts the electric field across oil ducts at operating high temperature.

Capacitively-coupled inductive sensors for measurements of pulsed currents and pulsed magnetic fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ekdahl, C.A.

In experiments involving pulsed high magnetic fields the appearance of the full induced voltage at the output terminals of large-area inductive sensors such as diamagnetic loops and Rogowski belts imposes severe requirements on the insulation near the output. Capacitive detection of the inductive-sensor output voltage provides an ideal geometry for high-voltage insulation, and also accomplishes the necessary voltage division. An inductive-shunt current monitor was designed to utilize the capacitive-detection principle. The contruction of this device and its performance are described in this paper.

Research and Construction of DC Energy Measurement Traceability Technology

NASA Astrophysics Data System (ADS)

Zhi, Wang; Maotao, Yang; Jing, Yang

2018-02-01

With the implementation of energy saving and emission reduction policies, DC energy metering has been widely used in many fields. In view of the lack of a DC energy measurementtraceability system, in combination with the process of downward measurement transfer in relation to the DC charger-based field calibration technology and DC energy meter and shunt calibration technologies, the paper proposed DC fast charging, high DC, small DC voltage output and measuring technologies, and built a time-based plan by converting high DC voltage into low voltage and high current into low current and then into low voltage, leaving DC energy traceable to national standards in terms of voltage, current and time and thus filling in the gap in DC energy measurement traceability.

Nested Helmholtz coil design for producing homogeneous transient rotating magnetic fields

NASA Astrophysics Data System (ADS)

Podaru, George; Moore, John; Dani, Raj Kumar; Prakash, Punit; Chikan, Viktor

2015-03-01

Electromagnets that can produce strong rotating magnetic fields at kHz frequencies are potentially very useful to exert rotating force on magnetic nanoparticles as small as few nanometers in size. In this article, the construction of a pulsed high-voltage rotating electromagnet is demonstrated based on a nested Helmholtz coil design. The energy for the coils is provided by two high-voltage discharge capacitors. The triggered spark gaps used in the experiments show sufficient accuracy to achieve the high frequency rotating magnetic field. The measured strength of the rotating magnetic field is 200 mT. This magnetic field is scalable by increasing the number of turns on the coils, by reducing the dimensions of the coils and by increasing the discharge current/voltage of the capacitors.

Current collection by high voltage anodes in near ionospheric conditions

NASA Technical Reports Server (NTRS)

Antoniades, John A.; Greaves, Rod G.; Boyd, D. A.; Ellis, R.

1990-01-01

The authors experimentally identified three distinct regimes with large differences in current collection in the presence of neutrals and weak magnetic fields. In magnetic field/anode voltage space the three regions are separated by very sharp transition boundaries. The authors performed a series of laboratory experiments to study the dependence of the region boundaries on several parameters, such as the ambient neutral density, plasma density, magnetic field strength, applied anode voltage, voltage pulsewidth, chamber material, chamber size and anode radius. The three observed regimes are: classical magnetic field limited collection; stable medium current toroidal discharge; and large scale, high current space glow discharge. There is as much as several orders of magnitude of difference in the amount of collected current upon any boundary crossing, particularly if one enters the space glow regime. They measured some of the properties of the plasma generated by the breakdown that is present in regimes II and III in the vicinity of the anode including the sheath modified electrostatic potential, I-V characteristics at high voltage as well as the local plasma density.

Nonlinear magnetoelectric effects at high magnetic field amplitudes in composite multiferroics

NASA Astrophysics Data System (ADS)

Fetisov, L. Y.; Burdin, D. A.; Ekonomov, N. A.; Chashin, D. V.; Zhang, J.; Srinivasan, G.; Fetisov, Y. K.

2018-04-01

Magnetoelectric effects (ME) in ferromagnetic-ferroelectric layered composites arise due to magnetostriction and piezoelectric effect in the ferroic phases and are mediated by mechanical strain. The ME coupling strength in such composites could be measured by electrical response to an applied ac magnetic field h and a bias magnetic field H. The coupling, in general, is linear for small ac field amplitudes, but one expects nonlinear ME interactions for high field strengths since the dependence of magnetostriction λ on magnetic fields is nonlinear. Here we report on nonlinear voltage response of a composite of ferromagnetic Metglas and piezoelectric lanthanum gallium tantalate (langatate) subjected to an ac and a bias magnetic fields, resulting in the generation of voltages at harmonics of the frequency of h. The dependences of the ME voltage of the first four harmonics on the magnetic fields for H  =  0–20 Oe and h  =  0–50 Oe were measured. Up to a hundred harmonics were observed in the voltage versus frequency spectra and was indicative of high nonlinearity of the ME coupling in the multiferroic structure. It is shown that for h smaller than the saturation magnetic field H S for magnetostriction in the ferromagnetic layer, the amplitudes of the ME voltages are proportional to the derivatives of λ with respect to H and show a power-law dependence on the pumping field amplitude A n (H) ~ λ (n)(H)h n . We discuss a procedure for estimating the amplitudes of the harmonics for large pumping fields h, on the order of H S. The nonlinear ME effects in the composites are of interest for application in signal processing devices and highly sensitive magnetic field sensors.

GaN HEMTs with p-GaN gate: field- and time-dependent degradation

NASA Astrophysics Data System (ADS)

Meneghesso, G.; Meneghini, M.; Rossetto, I.; Canato, E.; Bartholomeus, J.; De Santi, C.; Trivellin, N.; Zanoni, E.

2017-02-01

GaN-HEMTs with p-GaN gate have recently demonstrated to be excellent normally-off devices for application in power conversion systems, thanks to the high and robust threshold voltage (VTH>1 V), the high breakdown voltage, and the low dynamic Ron increase. For this reason, studying the stability and reliability of these devices under high stress conditions is of high importance. This paper reports on our most recent results on the field- and time-dependent degradation of GaN-HEMTs with p-GaN gate submitted to stress with positive gate bias. Based on combined step-stress experiments, constant voltage stress and electroluminescence testing we demonstrated that: (i) when submitted to high/positive gate stress, the transistors may show a negative threshold voltage shift, that is ascribed to the injection of holes from the gate metal towards the p-GaN/AlGaN interface; (ii) in a step-stress experiment, the analyzed commercial devices fail at gate voltages higher than 9-10 V, due to the extremely high electric field over the p-GaN/AlGaN stack; (iii) constant voltage stress tests indicate that the failure is also time-dependent and Weibull distributed. The several processes that can explain the time-dependent failure are discussed in the following.

Field-enhanced electrodes for additive-injection non-thermal plasma (NTP) processor

DOEpatents

Rosocha, Louis A [Los Alamos, NM; Ferreri, Vincent [Westminster, CO; Kim, Yongho [Los Alamos, NM

2009-04-21

The present invention comprises a field enhanced electrode package for use in a non-thermal plasma processor. The field enhanced electrode package includes a high voltage electrode and a field-enhancing electrode with a dielectric material layer disposed in-between the high voltage electrode and the field-enhancing electrode. The field-enhancing electrode features at least one raised section that includes at least one injection hole that allows plasma discharge streamers to occur primarily within an injected additive gas.

Magnetic fields and childhood cancer: an epidemiological investigation of the effects of high-voltage underground cables.

PubMed

Bunch, K J; Swanson, J; Vincent, T J; Murphy, M F G

2015-09-01

Epidemiological evidence of increased risks for childhood leukaemia from magnetic fields has implicated, as one source of such fields, high-voltage overhead lines. Magnetic fields are not the only factor that varies in their vicinity, complicating interpretation of any associations. Underground cables (UGCs), however, produce magnetic fields but have no other discernible effects in their vicinity. We report here the largest ever epidemiological study of high voltage UGCs, based on 52,525 cases occurring from 1962-2008, with matched birth controls. We calculated the distance of the mother's address at child's birth to the closest 275 or 400 kV ac or high-voltage dc UGC in England and Wales and the resulting magnetic fields. Few people are exposed to magnetic fields from UGCs limiting the statistical power. We found no indications of an association of risk with distance or of trend in risk with increasing magnetic field for leukaemia, and no convincing pattern of risks for any other cancer. Trend estimates for leukaemia as shown by the odds ratio (and 95% confidence interval) per unit increase in exposure were: reciprocal of distance 0.99 (0.95-1.03), magnetic field 1.01 (0.76-1.33). The absence of risk detected in relation to UGCs tends to add to the argument that any risks from overhead lines may not be caused by magnetic fields.

Neutron-induced single event burnout in high voltage electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Normand, E.; Wert, J.L.; Oberg, D.L.

Energetic neutrons with an atmospheric neutron spectrum, which were demonstrated to induce single event burnout in power MOSFETs, have been shown to induce burnout in high voltage (>3,000V) electronics when operated at voltages as low as 50% of rated voltage. The laboratory failure rates correlate well with field failure rates measured in Europe.

Electrical switching in cadmium boracite single crystals

NASA Technical Reports Server (NTRS)

Takahashi, T.; Yamada, O.

1981-01-01

Cadmium boracite single crystals at high temperatures ( 300 C) were found to exhibit a reversible electric field-induced transition between a highly insulative and a conductive state. The switching threshold is smaller than a few volts for an electrode spacing of a few tenth of a millimeter corresponding to an electric field of 100 to 1000 V/cm. This is much smaller than the dielectric break-down field for an insulator such as boracite. The insulative state reappears after voltage removal. A pulse technique revealed two different types of switching. Unstable switching occurs when the pulse voltage slightly exceeds the switching threshold and is characterized by a pre-switching delay and also a residual current after voltage pulse removal. A stable type of switching occurs when the voltage becomes sufficiently high. Possible device applications of this switching phenomenon are discussed.

Ultralow-power complementary metal-oxide-semiconductor inverters constructed on Schottky barrier modified nanowire metal-oxide-semiconductor field-effect-transistors.

PubMed

Ma, R M; Peng, R M; Wen, X N; Dai, L; Liu, C; Sun, T; Xu, W J; Qin, G G

2010-10-01

We show that the threshold voltages of both n- and p-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) can be lowered to close to zero by adding extra Schottky contacts on top of nanowires (NWs). Novel complementary metal-oxide-semiconductor (CMOS) inverters are constructed on these Schottky barrier modified n- and p-channel NW MOSFETs. Based on the high performances of the modified n- and p-channel MOSFETs, especially the low threshold voltages, the as-fabricated CMOS inverters have low operating voltage, high voltage gain, and ultra-low static power dissipation.

Characteristics of electroluminescence phenomenon in virgin and thermally aged LDPE

NASA Astrophysics Data System (ADS)

Bani, N. A.; Abdul-Malek, Z.; Ahmad, H.; Muhammad-Sukki, F.; Mas'ud, A. A.

2015-08-01

High voltage cable requires a good insulating material such as low density polyethylene (LDPE) to be able to operate efficiently in high voltage stresses and high temperature environment. However, any polymeric material will experience degradation after prolonged application of high electrical stresses or other extreme conditions. The continuous degradation will shorten the life of a cable therefore further understanding on the behaviour of the aged high voltage cable needs to be undertaken. This may be observed through electroluminescence (EL) measurement. EL occurs when a solid-state material is subjected to a high electrical field stress and associated with the generation of charge carriers within the polymeric material and that these charges can be produced by injection, de-trapping and field-dissociation at the metal-polymer interface. The behaviour of EL emission can be affected by applied field, applied frequency, ageing time, ageing temperature and types of materials, among others. This paper focuses on the measurement of EL emission of additive-free LDPE thermally aged at different temperature subjected to varying electric stresses at 50Hz. It can be observed that EL emission increases as voltage applied is increased. However, EL emission decreases as ageing temperature is increased for varying applied voltage.

Evaluating the Field Emission Characteristics of Aluminum for DC High Voltage Photo-Electron Guns

NASA Astrophysics Data System (ADS)

Taus, Rhys; Poelker, Matthew; Forman, Eric; Mamun, Abdullah

2014-03-01

High current photoguns require high power laser light, but only a small portion of the laser light illuminating the photocathode produces electron beam. Most of the laser light (~ 65%) simply serves to heat the photocathode, which leads to evaporation of the chemicals required to create the negative electron affinity condition necessary for photoemission. Photocathode cooling techniques have been employed to address this problem, but active cooling of the photocathode is complicated because the cooling apparatus must float at high voltage. This work evaluates the field emission characteristics of cathode electrodes manufactured from materials with high thermal conductivity: aluminum and copper. These electrodes could serve as effective heat sinks, to passively cool the photocathode that resides within such a structure. However, literature suggests ``soft'' materials like aluminum and copper are ill suited for photogun applications, due to excessive field emission when biased at high voltage. This work provides an evaluation of aluminum and copper electrodes inside a high voltage field emission test stand, before and after coating with titanium nitride (TiN), a coating that enhances surface hardness. National Science Foundation Award Number: 1062320 and the Department of Defence ASSURE program.

Prebreakdown characteristics of weakly ionized liquid and gaseous media in the strongly nonuniform electric field

NASA Astrophysics Data System (ADS)

Apfelbaum, M. S.; Syrovatka, R. A.; Vladimirov, V. I.

2018-01-01

A theoretical model of electrohydrodynamic prebreakdown phenomena in slightly ionized (weakly conductive) media is proposed. The electric high voltage conduction of weakly conductive liquids and slightly ionized gases in intense electric fields using this model is considered. The formula for the calculations of volt-ampere characteristics under high voltage spherical capacitor field is analytically obtained. The experimental corona discharge volt-ampere characteristics of air are presented. It was found that the size of the ionization region in the case of corona discharge in air increases monotonically with increasing discharge voltage.

A high voltage pulse generator based on silicon-controlled rectifier for field-reversed configuration experiment.

PubMed

Lin, Munan; Liu, Ming; Zhu, Guanghui; Wang, Yanpeng; Shi, Peiyun; Sun, Xuan

2017-08-01

A high voltage pulse generator based on a silicon-controlled rectifier has been designed and implemented for a field reversed configuration experiment. A critical damping circuit is used in the generator to produce the desired pulse waveform. Depending on the load, the rise time of the output trigger signal can be less than 1 μs, and the peak amplitudes of trigger voltage and current are up to 8 kV and 85 A in a single output. The output voltage can be easily adjusted by changing the voltage on a capacitor of the generator. In addition, the generator integrates an electrically floating heater circuit so it is capable of triggering either pseudosparks (TDI-type hydrogen thyratron) or ignitrons. Details of the circuits and their implementation are described in the paper. The trigger generator has successfully controlled the discharging sequence of the pulsed power supply for a field reversed configuration experiment.

A high voltage pulse generator based on silicon-controlled rectifier for field-reversed configuration experiment

NASA Astrophysics Data System (ADS)

Lin, Munan; Liu, Ming; Zhu, Guanghui; Wang, Yanpeng; Shi, Peiyun; Sun, Xuan

2017-08-01

A high voltage pulse generator based on a silicon-controlled rectifier has been designed and implemented for a field reversed configuration experiment. A critical damping circuit is used in the generator to produce the desired pulse waveform. Depending on the load, the rise time of the output trigger signal can be less than 1 μs, and the peak amplitudes of trigger voltage and current are up to 8 kV and 85 A in a single output. The output voltage can be easily adjusted by changing the voltage on a capacitor of the generator. In addition, the generator integrates an electrically floating heater circuit so it is capable of triggering either pseudosparks (TDI-type hydrogen thyratron) or ignitrons. Details of the circuits and their implementation are described in the paper. The trigger generator has successfully controlled the discharging sequence of the pulsed power supply for a field reversed configuration experiment.

Influence of the magnetic field profile on ITER conductor testing

NASA Astrophysics Data System (ADS)

Nijhuis, A.; Ilyin, Y.; ten Kate, H. H. J.

2006-08-01

We performed simulations with the numerical CUDI-CICC code on a typical short ITER (International Thermonuclear Experimental Reactor) conductor test sample of dual leg configuration, as usually tested in the SULTAN test facility, and made a comparison with the new EFDA-Dipole test facility offering a larger applied DC field region. The new EFDA-Dipole test facility, designed for short sample testing of conductors for ITER, has a homogeneous high field region of 1.2 m, while in the SULTAN facility this region is three times shorter. The inevitable non-uniformity of the current distribution in the cable, introduced by the joints at both ends, has a degrading effect on voltage-current (VI) and voltage-temperature (VT) characteristics, particularly for these short samples. This can easily result in an underestimation or overestimation of the actual conductor performance. A longer applied DC high field region along a conductor suppresses the current non-uniformity by increasing the overall longitudinal cable electric field when reaching the current sharing mode. The numerical interpretation study presented here gives a quantitative analysis for a relevant practical case of a test of a short sample poloidal field coil insert (PFCI) conductor in SULTAN. The simulation includes the results of current distribution analysis from self-field measurements with Hall sensor arrays, current sharing measurements and inter-petal resistance measurements. The outcome of the simulations confirms that the current uniformity improves with a longer high field region but the 'measured' VI transition is barely affected, though the local peak voltages become somewhat suppressed. It appears that the location of the high field region and voltage taps has practically no influence on the VI curve as long as the transverse voltage components are adequately cancelled. In particular, for a thin conduit wall, the voltage taps should be connected to the conduit in the form of an (open) azimuthally soldered wire, averaging the transverse conduit surface potentials initiated in the joints.

Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

DOE PAGES

BastaniNejad, Mahzad; Elmustafa, Abdelmageed A.; Forman, Eric; ...

2015-07-01

DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (~nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>μA) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolishedmore » by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.« less

Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

DOE Office of Scientific and Technical Information (OSTI.GOV)

BastaniNejad, Mahzad; Elmustafa, Abdelmageed A.; Forman, Eric

DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (~nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>μA) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolishedmore » by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.« less

Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

DOE Office of Scientific and Technical Information (OSTI.GOV)

BastaniNejad, Mahzad, E-mail: Mahhzad@gmail.com; Elmustafa, Abdelmageed A.; Forman, Eric

DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (∼nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>μA) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolishedmore » by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The authors speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.« less

Ultra-compact Marx-type high-voltage generator

DOEpatents

Goerz, David A.; Wilson, Michael J.

2000-01-01

An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

High-frequency electric field measurement using a toroidal antenna

DOEpatents

Lee, Ki Ha

2002-01-01

A simple and compact method and apparatus for detecting high frequency electric fields, particularly in the frequency range of 1 MHz to 100 MHz, uses a compact toroidal antenna. For typical geophysical applications the sensor will be used to detect electric fields for a wide range of spectrum starting from about 1 MHz, in particular in the frequency range between 1 to 100 MHz, to detect small objects in the upper few meters of the ground. Time-varying magnetic fields associated with time-varying electric fields induce an emf (voltage) in a toroidal coil. The electric field at the center of (and perpendicular to the plane of) the toroid is shown to be linearly related to this induced voltage. By measuring the voltage across a toroidal coil one can easily and accurately determine the electric field.

Ion Voltage Diagnostics in the Far-Field Plume of a High-Specific Impulse Hall Thruster

NASA Technical Reports Server (NTRS)

Hofer, Richard R.; Haas, James M.; Gallimore, Alec D.

2003-01-01

The effects of the magnetic field and discharge voltage on the far-field plume of the NASA 173Mv2 laboratory-model Hall thruster were investigated. A cylindrical Langmuir probe was used to measure the plasma potential and a retarding potential analyzer was employed to measure the ion voltage distribution. The plasma potential was affected by relatively small changes in the external magnetic field, which suggested a means to control the plasma surrounding the thruster. As the discharge voltage increased, the ion voltage distribution showed that the acceleration efficiency increased and the dispersion efficiency decreased. This implied that the ionization zone was growing axially and moving closer to the anode, which could have affected thruster efficiency and lifetime due to higher wall losses. However, wall losses may have been reduced by improved focusing efficiency since the total efficiency increased and the plume divergence decreased with discharge voltage.

Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Shun; Gao, Xu, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn; Zhong, Ya-Nan

High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio andmore » good memory retention.« less

Electric field and space charge distribution measurement in transformer oil struck by impulsive high voltage

NASA Astrophysics Data System (ADS)

Sima, Wenxia; Guo, Hongda; Yang, Qing; Song, He; Yang, Ming; Yu, Fei

2015-08-01

Transformer oil is widely used in power systems because of its excellent insulation properties. The accurate measurement of electric field and space charge distribution in transformer oil under high voltage impulse has important theoretical and practical significance, but still remains challenging to date because of its low Kerr constant. In this study, the continuous electric field and space charge distribution over time between parallel-plate electrodes in high-voltage pulsed transformer oil based on the Kerr effect is directly measured using a linear array photoelectrical detector. Experimental results demonstrate the applicability and reliability of this method. This study provides a feasible approach to further study the space charge effects and breakdown mechanisms in transformer oil.

TiN coated aluminum electrodes for DC high voltage electron guns

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys

Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloymore » (Ti-6AI-4V). Following gas conditioning, each TiN-coated aluminum electrode reached -225 kV bias voltage while generating less than 100 pA of field emission (<10 pA) using a 40 mm cathode/anode gap, corresponding to field strength of 13.7 MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ~22.5 MV/m with field emission less than 100 pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes.« less

TiN coated aluminum electrodes for DC high voltage electron guns

DOE PAGES

Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys; ...

2015-05-01

Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloymore » (Ti-6AI-4V). Following gas conditioning, each TiN-coated aluminum electrode reached -225 kV bias voltage while generating less than 100 pA of field emission (<10 pA) using a 40 mm cathode/anode gap, corresponding to field strength of 13.7 MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ~22.5 MV/m with field emission less than 100 pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes.« less

Design of high breakdown voltage GaN vertical HFETs with p-GaN buried buffer layers for power switching applications

NASA Astrophysics Data System (ADS)

Du, Jiangfeng; Liu, Dong; Zhao, Ziqi; Bai, Zhiyuan; Li, Liang; Mo, Jianghui; Yu, Qi

2015-07-01

To achieve a high breakdown voltage, a GaN vertical heterostructure field effect transistor with p-GaN buried layers (PBL-VHFET) is proposed in this paper. The breakdown voltage of this GaN-based PBL-VHFET could be improved significantly by the optimizing thickness of p-GaN buried layers and doping concentration in PBL. When the GaN buffer layer thickness is 15 μm, the thickness, length and p-doping concentration of PBL are 0.3 μm, 2.7 μm, and 3 × 1017 cm-3, respectively. Simulation results show that the breakdown voltage and on-resistance of the device with two p-GaN buried layers are 3022 V and 3.13 mΩ cm2, respectively. The average breakdown electric field would reach as high as 201.5 V/μm. Compared with the typical GaN vertical heterostructure FETs without PBL, both of breakdown voltage and average breakdown electric field of device are increased more than 50%.

High voltage power transistor development

NASA Technical Reports Server (NTRS)

Hower, P. L.

1981-01-01

Design considerations, fabrication procedures, and methods of evaluation for high-voltage power-transistor development are discussed. Technique improvements such as controlling the electric field at the surface and perserving lifetimes in the collector region which have advanced the state of the art in high-voltage transistors are discussed. These improvements can be applied directly to the development of 1200 volt, 200 ampere transistors.

Particle flows to shape and voltage surface discontinuities in the electron sheath surrounding a high voltage solar array in LEO

NASA Technical Reports Server (NTRS)

Metz, Roger N.

1991-01-01

This paper discusses the numerical modeling of electron flows from the sheath surrounding high positively biased objects in LEO (Low Earth Orbit) to regions of voltage or shape discontinuity on the biased surfaces. The sheath equations are derived from the Two-fluid, Warm Plasma Model. An equipotential corner and a plane containing strips of alternating voltage bias are treated in two dimensions. A self-consistent field solution of the sheath equations is outlined and is pursued through one cycle. The electron density field is determined by numerical solution of Poisson's equation for the electrostatic potential in the sheath using the NASCAP-LEO relation between electrostatic potential and charge density. Electron flows are calculated numerically from the electron continuity equation. Magnetic field effects are not treated.

A 700 V narrow channel nJFET with low pinch-off voltage and suppressed drain-induced barrier lowering effect

NASA Astrophysics Data System (ADS)

Mao, Kun; Qiao, Ming; Zhang, WenTong; Zhang, Bo; Li, Zhaoji

2014-11-01

This paper proposes a 700 V narrow channel region triple-RESURF (reduced surface field) n-type junction field-effect transistor (NCT-nJFET). Compared to traditional structures, low pinch-off voltage (VP) with unobvious drain-induced barrier lowering (DIBL) effect and large saturated current (IDsat) are achieved. This is because p-type buried layer (Pbury) and PWELL are introduced to shape narrow n-type channel in JFET channel region. DIBL sensitivity (SDIBL) is firstly introduced in this paper to analyze the DIBL effect of high-voltage long-channel JFET. Ultra-high breakdown voltage is obtained by triple RESURF technology. Experimental results show that proposed NCT-nJFET achieves 24-V VP, 3.5% SDIBL, 2.3-mA IDsat, 800-V OFF-state breakdown voltage (OFF-BV) and 650-V ON-state breakdown voltage when VGS equals 0 V (ON-BV).

E-H mode transition of a high-power inductively coupled plasma torch at atmospheric pressure with a metallic confinement tube

NASA Astrophysics Data System (ADS)

Altenberend, Jochen; Chichignoud, Guy; Delannoy, Yves

2012-08-01

Inductively coupled plasma torches need high ignition voltages for the E-H mode transition and are therefore difficult to operate. In order to reduce the ignition voltage of an RF plasma torch with a metallic confinement tube the E-H mode transition was studied. A Tesla coil was used to create a spark discharge and the E-H mode transition of the plasma was then filmed using a high-speed camera. The electrical potential of the metallic confinement tube was measured using a high-voltage probe. It was found that an arc between the grounded injector and the metallic confinement tube is maintained by the electric field (E-mode). The transition to H-mode occurred at high magnetic fields when the arc formed a loop. The ignition voltage could be reduced by connecting the metallic confinement tube with a capacitor to the RF generator.

Flexible electronic control system based on FPGA for liquid-crystal microlens

NASA Astrophysics Data System (ADS)

Zhang, Bo; Xin, Zhaowei; Li, Dapeng; Wei, Dong; Zhang, Xinyu; Wang, Haiwei; Xie, Changsheng

2018-02-01

Traditional imaging based on common optical lens can only be used to collect intensity information of incident beams, but actually lightwave also carries other mode information about targets and environment, including: spectrum, wavefront, and depth of target, and so on. It is very important to acquire those information mentioned for efficiently detecting and identifying targets in complex background. There is a urgent need to develop new high-performance optical imaging components. The liquid-crystal microlens (LCMs) only by applying spatial electrical field to change optical performance, have demonstrated remarkable advantages comparing conventional lenses, and therefore show a widely application prospect. Because the physical properties of the spatial electric fields between electrode plates in LCMs are directly related to the light-field performances of LCMs, the quality of voltage signal applied to LCMs needs high requirements. In this paper, we design and achieve a new type of digital voltage equipment with a wide adjustable voltage range and high precise voltage to effectively drive and adjust LCMs. More importantly, the device primarily based on field-programmable gate array(FPGA) can generate flexible and stable voltage signals to cooperate with the various functions of LCMs. Our experiments show that through the electronic control system, the LCMs already realize several significant functions including: electrically swing focus, wavefront imaging, electrically tunable spectral imaging and light-field imaging.

Evaluation of a “Field Cage” for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime

DOE PAGES

Tierney, Brian D.; Choi, Sukwon; DasGupta, Sandeepan; ...

2017-08-16

A distributed impedance “field cage” structure is proposed and evaluated for electric field control in GaN-based, lateral high electron mobility transistors (HEMTs) operating as kilovolt-range power devices. In this structure, a resistive voltage divider is used to control the electric field throughout the active region. The structure complements earlier proposals utilizing floating field plates that did not employ resistively connected elements. Transient results, not previously reported for field plate schemes using either floating or resistively connected field plates, are presented for ramps of dV ds /dt = 100 V/ns. For both DC and transient results, the voltage between the gatemore » and drain is laterally distributed, ensuring the electric field profile between the gate and drain remains below the critical breakdown field as the source-to-drain voltage is increased. Our scheme indicates promise for achieving breakdown voltage scalability to a few kV.« less

Evaluation of a “Field Cage” for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tierney, Brian D.; Choi, Sukwon; DasGupta, Sandeepan

A distributed impedance “field cage” structure is proposed and evaluated for electric field control in GaN-based, lateral high electron mobility transistors (HEMTs) operating as kilovolt-range power devices. In this structure, a resistive voltage divider is used to control the electric field throughout the active region. The structure complements earlier proposals utilizing floating field plates that did not employ resistively connected elements. Transient results, not previously reported for field plate schemes using either floating or resistively connected field plates, are presented for ramps of dV ds /dt = 100 V/ns. For both DC and transient results, the voltage between the gatemore » and drain is laterally distributed, ensuring the electric field profile between the gate and drain remains below the critical breakdown field as the source-to-drain voltage is increased. Our scheme indicates promise for achieving breakdown voltage scalability to a few kV.« less

Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

2016-06-09

We have successfully synthesized axially doped p- and n-type regions on a single Si nanowire (NW). Diodes and complementary metal-oxide-semiconductor (CMOS) inverter devices using single axial p- and n-channel Si NW field-effect transistors (FETs) were fabricated. We show that the threshold voltages of both p- and n-channel Si NW FETs can be lowered to nearly zero by effectively controlling the doping concentration. Because of the high performance of the p- and n-type Si NW channel FETs, especially with regard to the low threshold voltage, the fabricated NW CMOS inverters have a low operating voltage (<3 V) while maintaining a high voltage gain (∼6) and ultralow static power dissipation (≤0.3 pW) at an input voltage of ±3 V. This result offers a viable way for the fabrication of a high-performance high-density logic circuit using a low-temperature fabrication process, which makes it suitable for flexible electronics.

High voltage studies of inverted-geometry ceramic insulators for a 350 kV DC polarized electron gun

DOE PAGES

Hernandez-Garcia, C.; Poelker, M.; Hansknecht, J.

2016-02-01

Jefferson Lab is constructing a 350 kV direct current high voltage photoemission gun employing a compact inverted-geometry insulator. This photogun will produce polarized electron beams at an injector test facility intended for low energy nuclear physics experiments, and to assist the development of new technology for the Continuous Electron Beam Accelerator Facility. A photogun operating at 350kV bias voltage reduces the complexity of the injector design, by eliminating the need for a graded-beta radio frequency “capture” section employed to boost lower voltage beams to relativistic speed. However, reliable photogun operation at 350 kV necessitates solving serious high voltage problems relatedmore » to breakdown and field emission. This study focuses on developing effective methods to avoid breakdown at the interface between the insulator and the commercial high voltage cable that connects the photogun to the high voltage power supply. Three types of inverted insulators were tested, in combination with two electrode configurations. Our results indicate that tailoring the conductivity of the insulator material, and/or adding a cathode triple-junction screening electrode, effectively serves to increase the hold-off voltage from 300kV to more than 375kV. In conclusion, electrostatic field maps suggest these configurations serve to produce a more uniform potential gradient across the insulator.« less

High voltage studies of inverted-geometry ceramic insulators for a 350 kV DC polarized electron gun

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hernandez-Garcia, C.; Poelker, M.; Hansknecht, J.

Jefferson Lab is constructing a 350 kV direct current high voltage photoemission gun employing a compact inverted-geometry insulator. This photogun will produce polarized electron beams at an injector test facility intended for low energy nuclear physics experiments, and to assist the development of new technology for the Continuous Electron Beam Accelerator Facility. A photogun operating at 350kV bias voltage reduces the complexity of the injector design, by eliminating the need for a graded-beta radio frequency “capture” section employed to boost lower voltage beams to relativistic speed. However, reliable photogun operation at 350 kV necessitates solving serious high voltage problems relatedmore » to breakdown and field emission. This study focuses on developing effective methods to avoid breakdown at the interface between the insulator and the commercial high voltage cable that connects the photogun to the high voltage power supply. Three types of inverted insulators were tested, in combination with two electrode configurations. Our results indicate that tailoring the conductivity of the insulator material, and/or adding a cathode triple-junction screening electrode, effectively serves to increase the hold-off voltage from 300kV to more than 375kV. In conclusion, electrostatic field maps suggest these configurations serve to produce a more uniform potential gradient across the insulator.« less

Performance Test Results of the NASA-457M v2 Hall Thruster

NASA Technical Reports Server (NTRS)

Soulas, George C.; Haag, Thomas W.; Herman, Daniel A.; Huang, Wensheng; Kamhawi, Hani; Shastry, Rohit

2012-01-01

Performance testing of a second generation, 50 kW-class Hall thruster labeled NASA-457M v2 was conducted at the NASA Glenn Research Center. This NASA-designed thruster is an excellent candidate for a solar electric propulsion system that supports human exploration missions. Thruster discharge power was varied from 5 to 50 kW over discharge voltage and current ranges of 200 to 500 V and 15 to 100 A, respectively. Anode efficiencies varied from 0.56 to 0.71. The peak efficiency was similar to that of other state-of-the-art high power Hall thrusters, but outperformed these thrusters at lower discharge voltages. The 0.05 to 0.18 higher anode efficiencies of this thruster compared to its predecessor were primarily due to which of two stable discharge modes the thruster was operated. One stable mode was at low magnetic field strengths, which produced high anode efficiencies, and the other at high magnetic fields where its predecessor was operated. Cathode keeper voltages were always within 2.1 to 6.2 V and cathode voltages were within 13 V of tank ground during high anode efficiency operation. However, during operation at high magnetic fields, cathode-to-ground voltage magnitudes increased dramatically, exceeding 30 V, due to the high axial magnetic field strengths in the immediate vicinity of the centrally-mounted cathode. The peak thrust was 2.3 N and this occurred at a total thruster input power of 50.0 kW at a 500 V discharge voltage. The thruster demonstrated a thrust-to-power range of 76.4 mN/kW at low power to 46.1 mN/kW at full power, and a specific impulse range of 1420 to 2740 s. For a discharge voltage of 300 V, where specific impulses would be about 2000 s, thrust efficiencies varied from 0.57 to 0.63.

Electrical Behavior of Copper Mine Tailings During EKR with Modified Electric Fields.

PubMed

Rojo, Adrian; Hansen, Henrik K; Monárdez, Omara; Jorquera, Carlos; Santis, Paulina; Inostroza, Paula

2017-03-01

Electro-kinetic remediation (EKR) with sinusoidal electric field obtained simultaneously with DC/AC voltage reduce the polarization of the EKR with DC voltage. The DC voltage value defines the presence of a periodic polarity reversal of the cell and the electrical charge for electro-kinetic transport. In this case, the AC frequency favors the breaking of polarization conditions resulting from the EKR with DC voltage. However, with high frequencies a negative effect occurs where the tailings behave as a filter circuit, discriminating frequencies of an electric signal. The goal of this work is to analyse the electrical behaviour of tailings in EKR experiments. The conditions selected were: DC/AC voltages: 10/15 and 20/25 V (peak values), and AC voltage frequencies 50-2000 Hz. When the AC frequency reaches 2000 Hz, the copper removal tends to zero, indicating that the tailing behaves as a high-pass filter in which the DC voltage was filtered out.

Enhancing Food Processing by Pulsed and High Voltage Electric Fields: Principles and Applications.

PubMed

Wang, Qijun; Li, Yifei; Sun, Da-Wen; Zhu, Zhiwei

2018-02-02

Improvements in living standards result in a growing demand for food with high quality attributes including freshness, nutrition and safety. However, current industrial processing methods rely on traditional thermal and chemical methods, such as sterilization and solvent extraction, which could induce negative effects on food quality and safety. The electric fields (EFs) involving pulsed electric fields (PEFs) and high voltage electric fields (HVEFs) have been studied and developed for assisting and enhancing various food processes. In this review, the principles and applications of pulsed and high voltage electric fields are described in details for a range of food processes, including microbial inactivation, component extraction, and winemaking, thawing and drying, freezing and enzymatic inactivation. Moreover, the advantages and limitations of electric field related technologies are discussed to foresee future developments in the food industry. This review demonstrates that electric field technology has a great potential to enhance food processing by supplementing or replacing the conventional methods employed in different food manufacturing processes. Successful industrial applications of electric field treatments have been achieved in some areas such as microbial inactivation and extraction. However, investigations of HVEFs are still in an early stage and translating the technology into industrial applications need further research efforts.

The Design and Characterization of a Prototype Wideband Voltage Sensor Based on a Resistive Divider

PubMed Central

Garnacho, Fernando; Khamlichi, Abderrahim; Rovira, Jorge

2017-01-01

The most important advantage of voltage dividers over traditional voltage transformers is that voltage dividers do not have an iron core with non-linear hysteresis characteristics. The voltage dividers have a linear behavior with respect to over-voltages and a flat frequency response larger frequency range. The weak point of a voltage divider is the influence of external high-voltage (HV) and earth parts in its vicinity. Electrical fields arising from high voltages in neighboring phases and from ground conductors and structures are one of their main sources for systematic measurement errors. This paper describes a shielding voltage divider for a 24 kV medium voltage network insulated in SF6 composed of two resistive-capacitive dividers, one integrated within the other, achieving a flat frequency response up to 10 kHz for ratio error and up to 5 kHz for phase displacement error. The metal shielding improves its immunity against electric and magnetic fields. The characterization performed on the built-in voltage sensor shows an accuracy class of 0.2 for a frequency range from 20 Hz to 5 kHz and a class of 0.5 for 1 Hz up to 20 Hz. A low temperature effect is also achieved for operation conditions of MV power grids. PMID:29149085

The Design and Characterization of a Prototype Wideband Voltage Sensor Based on a Resistive Divider.

PubMed

Garnacho, Fernando; Khamlichi, Abderrahim; Rovira, Jorge

2017-11-17

The most important advantage of voltage dividers over traditional voltage transformers is that voltage dividers do not have an iron core with non-linear hysteresis characteristics. The voltage dividers have a linear behavior with respect to over-voltages and a flat frequency response larger frequency range. The weak point of a voltage divider is the influence of external high-voltage (HV) and earth parts in its vicinity. Electrical fields arising from high voltages in neighboring phases and from ground conductors and structures are one of their main sources for systematic measurement errors. This paper describes a shielding voltage divider for a 24 kV medium voltage network insulated in SF6 composed of two resistive-capacitive dividers, one integrated within the other, achieving a flat frequency response up to 10 kHz for ratio error and up to 5 kHz for phase displacement error. The metal shielding improves its immunity against electric and magnetic fields. The characterization performed on the built-in voltage sensor shows an accuracy class of 0.2 for a frequency range from 20 Hz to 5 kHz and a class of 0.5 for 1 Hz up to 20 Hz. A low temperature effect is also achieved for operation conditions of MV power grids.

High voltage and high current density vertical GaN power diodes

DOE PAGES

Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M.; ...

2016-01-01

We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm 2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm 2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.

Ion peak narrowing by applying additional AC voltage (ripple voltage) to FAIMS extractor electrode.

PubMed

Pervukhin, Viktor V; Sheven, Dmitriy G

2010-01-01

The use of a non-uniform electric field in a high-field asymmetric waveform ion mobility spectrometry (FAIMS) analyzer increases sensitivity but decreases resolution. The application of an additional AC voltage to the extractor electrode ("ripple" voltage, U(ripple)) can overcome this effect, which decreases the FAIMS peak width. In this approach, the diffusion ion loss remains minimal in the non-uniform electric field in the cylindrical part of the device, and all ion losses under U(ripple) occur in a short portion of their path. Application of the ripple voltage to the extractor electrode is twice as efficient as the applying of U(ripple) along the total length of the device. 2010 American Society for Mass Spectrometry. Published by Elsevier Inc. All rights reserved.

Design of high breakdown voltage vertical GaN p-n diodes with high-K/low-K compound dielectric structure for power electronics applications

NASA Astrophysics Data System (ADS)

Du, Jiangfeng; Li, Zhenchao; Liu, Dong; Bai, Zhiyuan; Liu, Yang; Yu, Qi

2017-11-01

In this work, a vertical GaN p-n diode with a high-K/low-K compound dielectric structure (GaN CD-VGD) is proposed and designed to achieve a record high breakdown voltage (BV) with a low specific on-resistance (Ron,sp). By introducing compound dielectric structure, the electric field near the p-n junction interface is suppressed due to the effects of high-K passivation layer, and a new electric field peak is induced into the n-type drift region, because of a discontinuity of electrical field at the interface of high-K and low-K layer. Therefore the distribution of electric field in GaN p-n diode becomes more uniform and an enhancement of breakdown voltage can be achieved. Numerical simulations demonstrate that GaN CD-VGD with a BV of 10650 V and a Ron,sp of 14.3 mΩ cm2, resulting in a record high figure-of-merit of 8 GW/cm2.

TiN coated aluminum electrodes for DC high voltage electron guns

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A., E-mail: aelmusta@odu.edu; Taus, Rhys

Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloymore » (Ti-6Al-4V). Following gas conditioning, each TiN-coated aluminum electrode reached −225 kV bias voltage while generating less than 100 pA of field emission (<10 pA) using a 40 mm cathode/anode gap, corresponding to field strength of 13.7 MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ∼22.5 MV/m with field emission less than 100 pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes.« less

Continuous-flow multi-pulse electroporation at low DC voltages by microfluidic flipping of the voltage space topology

NASA Astrophysics Data System (ADS)

Bhattacharjee, N.; Horowitz, L. F.; Folch, A.

2016-10-01

Concerns over biosafety, cost, and carrying capacity of viral vectors have accelerated research into physical techniques for gene delivery such as electroporation and mechanoporation. Advances in microfabrication have made it possible to create high electric fields over microscales, resulting in more efficient DNA delivery and higher cell viability. Continuous-flow microfluidic methods are typically more suitable for cellular therapies where a large number of cells need to be transfected under sterile conditions. However, the existing continuous-flow designs used to generate multiple pulses either require expensive peripherals such as high-voltage (>400 V) sources or function generators, or result in reduced cell viability due to the proximity of the cells to the electrodes. In this paper, we report a continuous-flow microfluidic device whose channel geometry reduces instrumentation demands and minimizes cellular toxicity. Our design can generate multiple pulses of high DC electric field strength using significantly lower voltages (15-60 V) than previous designs. The cells flow along a serpentine channel that repeatedly flips the cells between a cathode and an anode at high throughput. The cells must flow through a constriction each time they pass from an anode to a cathode, exposing them to high electric field strength for short durations of time (the "pulse-width"). A conductive biocompatible poly-aniline hydrogel network formed in situ is used to apply the DC voltage without bringing the metal electrodes close to the cells, further sheltering cells from the already low voltage electrodes. The device was used to electroporate multiple cell lines using electric field strengths between 700 and 800 V/cm with transfection efficiencies superior than previous flow-through designs.

Continuous-flow multi-pulse electroporation at low DC voltages by microfluidic flipping of the voltage space topology.

PubMed

Bhattacharjee, N; Horowitz, L F; Folch, A

2016-10-17

Concerns over biosafety, cost, and carrying capacity of viral vectors have accelerated research into physical techniques for gene delivery such as electroporation and mechanoporation. Advances in microfabrication have made it possible to create high electric fields over microscales, resulting in more efficient DNA delivery and higher cell viability. Continuous-flow microfluidic methods are typically more suitable for cellular therapies where a large number of cells need to be transfected under sterile conditions. However, the existing continuous-flow designs used to generate multiple pulses either require expensive peripherals such as high-voltage (>400 V) sources or function generators, or result in reduced cell viability due to the proximity of the cells to the electrodes. In this paper, we report a continuous-flow microfluidic device whose channel geometry reduces instrumentation demands and minimizes cellular toxicity. Our design can generate multiple pulses of high DC electric field strength using significantly lower voltages (15-60 V) than previous designs. The cells flow along a serpentine channel that repeatedly flips the cells between a cathode and an anode at high throughput. The cells must flow through a constriction each time they pass from an anode to a cathode, exposing them to high electric field strength for short durations of time (the "pulse-width"). A conductive biocompatible poly-aniline hydrogel network formed in situ is used to apply the DC voltage without bringing the metal electrodes close to the cells, further sheltering cells from the already low voltage electrodes. The device was used to electroporate multiple cell lines using electric field strengths between 700 and 800 V/cm with transfection efficiencies superior than previous flow-through designs.

High Voltage SPT Performance

NASA Technical Reports Server (NTRS)

Manzella, David; Jacobson, David; Jankovsky, Robert

2001-01-01

A 2.3 kW stationary plasma thruster designed to operate at high voltage was tested at discharge voltages between 300 and 1250 V. Discharge specific impulses between 1600 and 3700 sec were demonstrated with thrust between 40 and 145 mN. Test data indicated that discharge voltage can be optimized for maximum discharge efficiency. The optimum discharge voltage was between 500 and 700 V for the various anode mass flow rates considered. The effect of operating voltage on optimal magnet field strength was investigated. The effect of cathode flow rate on thruster efficiency was considered for an 800 V discharge.

Current-voltage characteristics of carbon nanostructured field emitters in different power supply modes

NASA Astrophysics Data System (ADS)

Popov, E. O.; Kolosko, A. G.; Filippov, S. V.; Romanov, P. A.; Terukov, E. I.; Shchegolkov, A. V.; Tkachev, A. G.

2017-12-01

We received and compared the current-voltage characteristics of large-area field emitters based on nanocomposites with graphene and nanotubes. The characteristics were measured in two high voltage scanning modes: the "slow" and the "fast". Correlation between two types of hysteresis observed in these regimes was determined. Conditions for transition from "reverse" hysteresis to the "direct" one were experimentally defined. Analysis of the eight-shaped hysteresis was provided with calculation of the effective emission parameters. The phenomenological model of adsorption-desorption processes in the field emission system was proposed.

Technologies for suppressing charge-traps in novel p-channel Field-MOSFET with thick gate oxide

NASA Astrophysics Data System (ADS)

Miyoshi, Tomoyuki; Oshima, Takayuki; Noguchi, Junji

2015-05-01

High voltage laterally diffused MOS (LDMOS) FETs are widely used in analog applications. A Field-MOSFET with a thick gate oxide is one of the best ways of achieving a simpler design and smaller circuit footprint for high-voltage analog circuits. This paper focuses on an approach to improving the reliability of p-channel Field-MOSFETs. By introducing a fluorine implantation process and terminating fluorine at the LOCOS bird’s beak, the gate oxide breakdown voltage could be raised to 350 V at a high-slew rate and the negative bias temperature instability (NBTI) shift could be kept to within 15% over a product’s lifetime. By controlling the amount of charge in the insulating layer through improving the interlayer dielectric (ILD) deposition processes, a higher BVDSS of 370 V and 10-year tolerability of 300 V were obtained with an assisted reduced surface electric field (RESURF) effect. These techniques can supply an efficient solution for ensuring reliable high-performance applications.

A high-voltage cardiac stimulator for field shocks of a whole heart in a bath

NASA Astrophysics Data System (ADS)

Mashburn, David N.; Hinkson, Stephen J.; Woods, Marcella C.; Gilligan, Jonathan M.; Holcomb, Mark R.; Wikswo, John P.

2007-10-01

Defibrillators are a critical tool for treating heart disease; however, the mechanisms by which they halt fibrillation are still not fully understood and are the subject of ongoing research. Clinical defibrillators do not provide the precise control of shock timing, duration, and voltage or other features needed for detailed scientific inquiry, and there are few, if any, commercially available units designed for research applications. For this reason, we have developed a high-voltage, programmable, capacitive-discharge stimulator optimized to deliver defibrillation shocks with precise timing and voltage control to an isolated animal heart, either in air or in a bath. This stimulator is capable of delivering voltages of up to 500V and energies of nearly 100J with timing accuracy of a few microseconds and with rise and fall times of 5μs or less and is controlled only by two external timing pulses and a control computer that sets the stimulation parameters via a LABVIEW interface. Most importantly, the stimulator has circuits to protect the high-voltage circuitry and the operator from programming and input-output errors. This device has been tested and used successfully in field shock experiments on rabbit hearts as well as other protocols requiring high voltage.

Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor.

PubMed

Lee, In-Kyu; Lee, Kwan Hyi; Lee, Seok; Cho, Won-Ju

2014-12-24

We used a microwave annealing process to fabricate a highly reliable biosensor using amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs), which usually experience threshold voltage instability. Compared with furnace-annealed a-IGZO TFTs, the microwave-annealed devices showed superior threshold voltage stability and performance, including a high field-effect mobility of 9.51 cm(2)/V·s, a low threshold voltage of 0.99 V, a good subthreshold slope of 135 mV/dec, and an outstanding on/off current ratio of 1.18 × 10(8). In conclusion, by using the microwave-annealed a-IGZO TFT as the transducer in an extended-gate ion-sensitive field-effect transistor biosensor, we developed a high-performance biosensor with excellent sensing properties in terms of pH sensitivity, reliability, and chemical stability.

Remote electrical arc suppression by laser filamentation.

PubMed

Schubert, Elise; Mongin, Denis; Kasparian, Jérôme; Wolf, Jean-Pierre

2015-11-02

We investigate the interaction of narrow plasma channels formed in the filamentation of ultrashort laser pulses, with a DC high voltage. The laser filaments prevent electrical arcs by triggering corona that neutralize the high-voltage electrodes. This phenomenon, that relies on the electric field modulation and free electron release around the filament, opens new prospects to lightning and over-voltage mitigation.

Experimental investigation of SDBD plasma actuator driven by AC high voltage with a superimposed positive pulse bias voltage

NASA Astrophysics Data System (ADS)

Qi, Xiao-Hua; Yan, Hui-Jie; Yang, Liang; Hua, Yue; Ren, Chun-Sheng

2017-08-01

In this work, a driven voltage consisting of AC high voltage with a superimposed positive pulse bias voltage ("AC+ Positive pulse bias" voltage) is adopted to study the performance of a surface dielectric barrier discharge plasma actuator under atmospheric conditions. To compare the performance of the actuator driven by single-AC voltage and "AC+ Positive pulse bias" voltage, the actuator-induced thrust force and power consumption are measured as a function of the applied AC voltage, and the measured results indicate that the thrust force can be promoted significantly after superimposing the positive pulse bias voltage. The physical mechanism behind the thrust force changes is analyzed by measuring the optical properties, electrical characteristics, and surface potential distribution. Experimental results indicate that the glow-like discharge in the AC voltage half-cycle, next to the cycle where a bias voltage pulse has been applied, is enhanced after applying the positive pulse bias voltage, and this perhaps is the main reason for the thrust force increase. Moreover, surface potential measurement results reveal that the spatial electric field formed by the surface charge accumulation after positive pulse discharge can significantly affect the applied external electric field, and this perhaps can be responsible for the experimental phenomenon that the decrease of thrust force is delayed by pulse bias voltage action after the filament discharge occurs in the glow-like discharge region. The schlieren images further verify that the actuator-induced airflow velocity increases with the positive pulse voltage.

5.0 kV breakdown-voltage vertical GaN p-n junction diodes

NASA Astrophysics Data System (ADS)

Ohta, Hiroshi; Hayashi, Kentaro; Horikiri, Fumimasa; Yoshino, Michitaka; Nakamura, Tohru; Mishima, Tomoyoshi

2018-04-01

A high breakdown voltage of 5.0 kV has been achieved for the first time in vertical GaN p-n junction diodes by using our newly developed guard-ring structures. A resistance device was inserted between the main diode portion and the guard-ring portion in a ring-shaped p-n diode to generate a voltage drop over the resistance device by leakage current flowing through the guard-ring portion under negatively biased conditions before breakdown. The voltage at the outer mesa edge of the guard-ring portion, where the electric field intensity is highest and the destructive breakdown usually occurs, is decreased by the voltage drop, so the electric field concentration in the portion is reduced. By adopting this structure, the breakdown voltage (V B) is raised by about 200 V. Combined with a low measured on-resistance (R on) of 1.25 mΩ cm2, Baliga’s figure of merit (V\\text{B}2/R\\text{on}) was as high as 20 GW/cm2.

Carbon nanotubes for voltage reduction and throughput enhancement of electrical cell lysis on a lab-on-a-chip.

PubMed

Shahini, Mehdi; Yeow, John T W

2011-08-12

We report on the enhancement of electrical cell lysis using carbon nanotubes (CNTs). Electrical cell lysis systems are widely utilized in microchips as they are well suited to integration into lab-on-a-chip devices. However, cell lysis based on electrical mechanisms has high voltage requirements. Here, we demonstrate that by incorporating CNTs into microfluidic electrolysis systems, the required voltage for lysis is reduced by half and the lysis throughput at low voltages is improved by ten times, compared to non-CNT microchips. In our experiment, E. coli cells are lysed while passing through an electric field in a microchannel. Based on the lightning rod effect, the electric field strengthened at the tip of the CNTs enhances cell lysis at lower voltage and higher throughput. This approach enables easy integration of cell lysis with other on-chip high-throughput sample-preparation processes.

Associating ground magnetometer observations with current or voltage generators

NASA Astrophysics Data System (ADS)

Hartinger, M. D.; Xu, Z.; Clauer, C. R.; Yu, Y.; Weimer, D. R.; Kim, H.; Pilipenko, V.; Welling, D. T.; Behlke, R.; Willer, A. N.

2017-07-01

A circuit analogy for magnetosphere-ionosphere current systems has two extremes for drivers of ionospheric currents: ionospheric electric fields/voltages constant while current/conductivity vary—the "voltage generator"—and current constant while electric field/conductivity vary—the "current generator." Statistical studies of ground magnetometer observations associated with dayside Transient High Latitude Current Systems (THLCS) driven by similar mechanisms find contradictory results using this paradigm: some studies associate THLCS with voltage generators, others with current generators. We argue that most of this contradiction arises from two assumptions used to interpret ground magnetometer observations: (1) measurements made at fixed position relative to the THLCS field-aligned current and (2) negligible auroral precipitation contributions to ionospheric conductivity. We use observations and simulations to illustrate how these two assumptions substantially alter expectations for magnetic perturbations associated with either a current or a voltage generator. Our results demonstrate that before interpreting ground magnetometer observations of THLCS in the context of current/voltage generators, the location of a ground magnetometer station relative to the THLCS field-aligned current and the location of any auroral zone conductivity enhancements need to be taken into account.

Tunable high-order-sideband generation and carrier-envelope-phase-dependent effects via microwave fields in hybrid electro-optomechanical systems

NASA Astrophysics Data System (ADS)

Si, Liu-Gang; Guo, Ling-Xia; Xiong, Hao; Wu, Ying

2018-02-01

We investigate the high-order-sideband generation (HSG) in a hybrid cavity electro-photomechanical system in which an optical cavity is driven by two optical fields (a monochromatic pump field and a nanosecond Gaussian probe pulse with huge numbers of wave cycles), and at the same time a microwave cavity is driven by a monochromatic ac voltage bias. We show that even if the input powers of two driven optical fields are comparatively low the HSG spectra can be induced and enhanced, and the sideband plateau is extended remarkably with the power of the ac voltage bias increasing. It is also shown that the driven ac voltage bias has profound effects on the carrier-envelope-phase-dependent effects of the HSG in the hybrid cavity electro-photomechanical system. Our research may provide an effective way to control the HSG of optical fields by using microwave fields in cavity optomechanics systems.

Highly stable field emission from ZnO nanowire field emitters controlled by an amorphous indium–gallium–zinc-oxide thin film transistor

NASA Astrophysics Data System (ADS)

Li, Xiaojie; Wang, Ying; Zhang, Zhipeng; Ou, Hai; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

2018-04-01

Lowering the driving voltage and improving the stability of nanowire field emitters are essential for them to be applied in devices. In this study the characteristics of zinc oxide (ZnO) nanowire field emitter arrays (FEAs) controlled by an amorphous indium–gallium–zinc-oxide thin film transistor (a-IGZO TFT) were studied. A low driving voltage along with stabilization of the field emission current were achieved. Modulation of field emission currents up to three orders of magnitude was achieved at a gate voltage of 0–32 V for a constant anode voltage. Additionally, a-IGZO TFT control can dramatically reduce the emission current fluctuation (i.e., from 46.11 to 1.79% at an emission current of ∼3.7 µA). Both the a-IGZO TFT and ZnO nanowire FEAs were prepared on glass substrates in our research, demonstrating the feasibility of realizing large area a-IGZO TFT-controlled ZnO nanowire FEAs.

Temperature dependence of frequency response characteristics in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Lu, Xubing; Minari, Takeo; Liu, Chuan; Kumatani, Akichika; Liu, J.-M.; Tsukagoshi, Kazuhito

2012-04-01

The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characteristics in pentacene-based organic field-effect transistors and metal-insulator-semiconductor capacitors. As the temperature decreased, the capacitance-voltage characteristics showed large frequency dispersion and a negative shift in the flat-band voltage at high frequencies. The cutoff frequency shows Arrhenius-type temperature dependence with different activation energy values for various gate voltages. These phenomena demonstrate the effects of charge trapping on the frequency response characteristics, since decreased mobility prevents a fast charge response for alternating current signals at low temperatures.

Discussion of Electrode Conditioning Mechanism Based on Pre-breakdown Current under Non-uniform Electric Field in Vacuum

NASA Astrophysics Data System (ADS)

Yasuoka, Takanori; Kato, Tomohiro; Kato, Katsumi; Okubo, Hitoshi

Electrode conditioning is very important technique for improvement of the insulation performance of vacuum circuit breakers (VCBs). This paper discusses the spark conditioning mechanism under non-uniform electric field focused on the pre-breakdown current. We quantitatively evaluated the spark conditioning effect by analyzing the pre-breakdown current based on Fowler-Nordheim equation. As a result, field enhancement factor β decreased with the increasing in breakdown voltage in the beginning of conditioning process, and finally β was saturated with the saturation of breakdown voltage. In addition, in case of non-uniform field, we found that β on high voltage rod electrode after conditioning varied according to the electric field strength on the rod electrode.

Note: Versatile sample stick for neutron scattering experiments in high electric fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bartkowiak, M., E-mail: marek.bartkowiak@psi.ch; White, J. S.; Laboratory for Quantum Magnetism, Ecole Polytechnique Fédérale de Lausanne

2014-02-15

We present a versatile high voltage sample stick that fits into all cryomagnets and standard cryostats at the Swiss Spallation Neutron Source, Paul Scherrer Institut, and which provides a low effort route to neutron scattering experiments that combine electric field with low temperature and magnetic field. The stick allows for voltages up to 5 kV and can be easily adapted for different scattering geometries. We discuss the design consideration and thermal behavior of the stick, and give one example to showcase the abilities of the device.

Study of the effect of electromagnetic fields on indoor and outdoor radon concentrations

NASA Astrophysics Data System (ADS)

Haider, Lina M.; Shareef, N. R.; Darwoysh, H. H.; Mansour, H. L.

2018-05-01

In the present work, the effect of electromagnetic fields produced by high voltage power lines(132kV) and indoor equipments on the indoor and outdoor average radon concentrations in Al-Kazaliya and Hay Al-Adil regions in Baghdad city were studied using CR-39 track detectors and a gauss-meter.Results of measurements of the present study, have shown that the highest value for the indoor average radon concentration (76.56± 8.44 Bq / m3) was recorded for sample A1(Hay Al-Adel) at a distance of (20 m) from the high voltage power lines, while the lowest value for the indoor average radon concentration (30.46 ± 8.44 Bq / m3) was recorded for sample A3 (Hay Al-Adil) at a distance of (50 m) from the high voltage power lines. The indoor gaussmeter measurements were found to be ranged from (30.2 mG) to (38.5 mG). The higest value for outdoor average radon concentration and the highest gaussmeter measurements were found for sample (1), with values (92.63 ±11.2 Bq / m3) and (87.24 ± 2.85 mG), directly under the high voltage power lines respectively, while the lowest outdoor average radon concentration and the lowest gaussmeter measurements were found in sample (4),with values (34.19 ± 6.33 Bq / m3) and (1.16 ± 0.14 Bq / m3),), at a distance of (120 m) from the high voltage power lines respectively. The results of the present work have shown that there might be an influence of the electromagnetic field on radon concentrations in areas which were close to high voltage power lines and houses which have used many electric equipment for a long period of time.

Large space system: Charged particle environment interaction technology

NASA Technical Reports Server (NTRS)

Stevens, N. J.; Roche, J. C.; Grier, N. T.

1979-01-01

Large, high voltage space power systems are proposed for future space missions. These systems must operate in the charged-particle environment of space and interactions between this environment and the high voltage surfaces are possible. Ground simulation testing indicated that dielectric surfaces that usually surround biased conductors can influence these interactions. For positive voltages greater than 100 volts, it has been found that the dielectrics contribute to the current collection area. For negative voltages greater than-500 volts, the data indicates that the dielectrics contribute to discharges. A large, high-voltage power system operating in geosynchronous orbit was analyzed. Results of this analysis indicate that very strong electric fields exist in these power systems.

Modification of the fault logic circuit of a high-energy linear accelerator to accommodate selectively coded, large-field wedges.

PubMed

Miller, R W; van de Geijn, J

1987-01-01

A modification to the fault logic circuit that controls the collimator (COLL) fault is described. This modification permits the use of large-field wedges by adding an additional input into the reference voltage that determines the fault condition. The resistor controlling the amount of additional voltage is carried on board each wedge, within the wedge plug. This allows each wedge to determine its own, individual field size limit. Additionally, if no coding resistor is provided, the factory-supplied reference voltage is used, which sets the maximum allowable field size to 15 cm. This permits the use of factory-supplied wedges in conjunction with selected, large-field wedges, allowing proper sensing of the field size maximum in all conditions.

Low-voltage operation of Si-based ferroelectric field effect transistors using organic ferroelectrics, poly(vinylidene fluoride-trifluoroethylene), as a gate dielectric

NASA Astrophysics Data System (ADS)

Miyata, Yusuke; Yoshimura, Takeshi; Ashida, Atsushi; Fujimura, Norifumi

2016-04-01

Si-based metal-ferroelectric-semiconductor (MFS) capacitors have been fabricated using poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] as a ferroelectric gate. The pinhole-free P(VDF-TrFE) thin films with high resistivity were able to be prepared by spin-coating directly onto hydrogen-terminated Si. The capacitance-voltage (C-V) characteristics of the ferroelectric gate field effect transistor (FeFET) using this MFS structure clearly show butterfly-shaped hysteresis originating from the ferroelectricity, indicating carrier modulation on the Si surface at gate voltages below 2 V. The drain current-gate voltage (I D-V G) characteristics also show counterclockwise hysteresis at gate voltages below 5 V. This is the first report on the low-voltage operation of a Si-based FeFET using P(VDF-TrFE) as a gate dielectric. This organic gate FeFET without any insulator layer at the ferroelectric/Si interface should be one of the promising devices for overcoming the critical issues of the FeFET, such as depolarization field and a decrease in the gate voltage.

Magnetic Ignition of Pulsed Gas Discharges in Air of Low Pressure in a Coaxial Plasma Gun

NASA Technical Reports Server (NTRS)

Thom, Karlheinz; Norwood, Joseph, Jr.

1961-01-01

The effect of an axial magnetic field on the breakdown voltage of a coaxial system of electrodes has been investigated by earlier workers. For low values of gas pressure times electrode spacing, the breakdown voltage is decreased by the application of the magnetic field. The electron cyclotron radius now assumes the role held by the mean free path in nonmagnetic discharges and the breakdown voltage becomes a function of the magnetic flux density. In this paper the dependence of the formative time lag as a function of the magnetic flux density is established and the feasibility of using a magnetic field for igniting high-voltage, high-current discharges is shown through theory and experiment. With a 36 microfarad capacitor bank charged to 48,000 volts, a peak current of 1.3 x 10( exp 6) amperes in a coaxial type of plasma gun was achieved with a current rise time of only 2 microseconds.

Current saturation and voltage gain in bilayer graphene field effect transistors.

PubMed

Szafranek, B N; Fiori, G; Schall, D; Neumaier, D; Kurz, H

2012-03-14

The emergence of graphene with its unique electrical properties has triggered hopes in the electronic devices community regarding its exploitation as a channel material in field effect transistors. Graphene is especially promising for devices working at frequencies in the 100 GHz range. So far, graphene field effect transistors (GFETs) have shown cutoff frequencies up to 300 GHz, while exhibiting poor voltage gains, another important figure of merit for analog high frequency applications. In the present work, we show that the voltage gain of GFETs can be improved significantly by using bilayer graphene, where a band gap is introduced through a vertical electric displacement field. At a displacement field of -1.7 V/nm the bilayer GFETs exhibit an intrinsic voltage gain up to 35, a factor of 6 higher than the voltage gain in corresponding monolayer GFETs. The transconductance, which limits the cutoff frequency of a transistor, is not degraded by the displacement field and is similar in both monolayer and bilayer GFETs. Using numerical simulations based on an atomistic p(z) tight-binding Hamiltonian we demonstrate that this approach can be extended to sub-100 nm gate lengths. © 2012 American Chemical Society

Numerical characterization of plasma breakdown in reversed field pinches

NASA Astrophysics Data System (ADS)

Peng, Yanli; Zhang, Ya; Mao, Wenzhe; Yang, Zhoujun; Hu, Xiwei; Jiang, Wei

2018-02-01

In the reversed field pinch, there is considerable interest in investigating the plasma breakdown. Indeed, the plasma formed during the breakdown may have an influence on the confinement and maintenance in the latter process. However, up to now there has been no related work, experimentally or in simulation, regarding plasma breakdown in reversed field pinch (RFP). In order to figure out the physical mechanism behind plasma breakdown, the effects of the toroidal and error magnetic field, as well as the loop voltage have been studied. We find that the error magnetic field cannot be neglected even though it is quite small in the short plasma breakdown phase. As the toroidal magnetic field increases, the averaged electron energy is reduced after plasma breakdown is complete, which is disadvantageous for the latter process. In addition, unlike the voltage limits in the tokamak, loop voltages can be quite high because there are no requirements for superconductivity. Volt-second consumption has a small difference under different loop voltages. The breakdown delay still exists in various loop voltage cases, but it is much shorter compared to that in the tokamak case. In all, successful breakdowns are possible in the RFP under a fairly broad range of parameters.

Driver Circuit For High-Power MOSFET's

NASA Technical Reports Server (NTRS)

Letzer, Kevin A.

1991-01-01

Driver circuit generates rapid-voltage-transition pulses needed to switch high-power metal oxide/semiconductor field-effect transistor (MOSFET) modules rapidly between full "on" and full "off". Rapid switching reduces time of overlap between appreciable current through and appreciable voltage across such modules, thereby increasing power efficiency.

Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits.

PubMed

Chen, Bingyan; Zhang, Panpan; Ding, Li; Han, Jie; Qiu, Song; Li, Qingwen; Zhang, Zhiyong; Peng, Lian-Mao

2016-08-10

Top-gated p-type field-effect transistors (FETs) have been fabricated in batch based on carbon nanotube (CNT) network thin films prepared from CNT solution and present high yield and highly uniform performance with small threshold voltage distribution with standard deviation of 34 mV. According to the property of FETs, various logical and arithmetical gates, shifters, and d-latch circuits were designed and demonstrated with rail-to-rail output. In particular, a 4-bit adder consisting of 140 p-type CNT FETs was demonstrated with higher packing density and lower supply voltage than other published integrated circuits based on CNT films, which indicates that CNT based integrated circuits can reach to medium scale. In addition, a 2-bit multiplier has been realized for the first time. Benefitted from the high uniformity and suitable threshold voltage of CNT FETs, all of the fabricated circuits based on CNT FETs can be driven by a single voltage as small as 2 V.

High voltage interactions of a sounding rocket with the ambient and system-generated environments

NASA Technical Reports Server (NTRS)

Kuharski, Robert A.; Jongeward, Gary A.; Wilcox, Katherine G.; Rankin, Thomas V.; Roche, James C.

1990-01-01

EPSAT (environment power system analysis tool) is used to examine the design of SPEAR III, which is scheduled to fly in early 1991. It will test high-voltage designs in both ambient and system-generated environments. Two of the key questions that the experiment hopes to address are whether or not the earth's magnetic field can cause the current that a high-voltage object draws from the plasma to be far less than the current that would be drawn in the absence of the magnetic field and under what neutral environmental conditions a discharge from the high-voltage object to the plasma will occur. The EPSAT program makes it possible to perform a variety of analyses on a preliminary or conceptual-level description of a system in a short period of time. The calculations presented on SPEAR III are all done for a conceptual-level description. The calculations indicate that the experiment will produce the conditions necessary to address these questions.

Development and application of network virtual instrument for emission spectrum of pulsed high-voltage direct current discharge

NASA Astrophysics Data System (ADS)

Gong, X.; Wu, Q.

2017-12-01

Network virtual instrument (VI) is a new development direction in current automated test. Based on LabVIEW, the software and hardware system of VI used for emission spectrum of pulsed high-voltage direct current (DC) discharge is developed and applied to investigate pulsed high-voltage DC discharge of nitrogen. By doing so, various functions are realized including real time collection of emission spectrum of nitrogen, monitoring operation state of instruments and real time analysis and processing of data. By using shared variables and DataSocket technology in LabVIEW, the network VI system based on field VI is established. The system can acquire the emission spectrum of nitrogen in the test site, monitor operation states of field instruments, realize real time face-to-face interchange of two sites, and analyze data in the far-end from the network terminal. By employing the network VI system, the staff in the two sites acquired the same emission spectrum of nitrogen and conducted the real time communication. By comparing with the previous results, it can be seen that the experimental data obtained by using the system are highly precise. This implies that the system shows reliable network stability and safety and satisfies the requirements for studying the emission spectrum of pulsed high-voltage discharge in high-precision fields or network terminals. The proposed architecture system is described and the target group gets the useful enlightenment in many fields including engineering remote users, specifically in control- and automation-related tasks.

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

NASA Astrophysics Data System (ADS)

Held, Martin; Schießl, Stefan P.; Miehler, Dominik; Gannott, Florentina; Zaumseil, Jana

2015-08-01

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfOx) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100-300 nF/cm2) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfOx dielectrics.

Electrochemical capacitance voltage measurements in highly doped silicon and silicon-germanium alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sermage, B.; Essa, Z.; Taleb, N.

2016-04-21

The electrochemical capacitance voltage technique has been used on highly boron doped SiGe and Si layers. Although the boron concentration is constant over the space charge depth, the 1/C{sup 2} versus voltage curves are not linear. They indeed present a negative curvature. This can be explained by the existence of deep acceptors which ionise under a high electric field (large inverse voltage) and not at a low inverse voltage. The measured doping concentration in the electrochemical capacitance voltage increases strongly as the inverse voltage increases. Thanks to a comparison with the boron concentration measured by secondary ions mass spectrometry, wemore » show that the relevant doping concentrations in device layers are obtained for small inverse voltage in agreement with the existence of deep acceptors. At the large inverse voltage, the measured doping can be more than twice larger than the boron concentration measured with a secondary ion mass spectroscopy.« less

Transdermal transport pathway creation: Electroporation pulse order.

PubMed

Becker, Sid; Zorec, Barbara; Miklavčič, Damijan; Pavšelj, Nataša

2014-11-01

In this study we consider the physics underlying electroporation which is administered to skin in order to radically increase transdermal drug delivery. The method involves the application of intense electric fields to alter the structure of the impermeable outer layer, the stratum corneum. A generally held view in the field of skin electroporation is that the skin's drop in resistance (to transport) is proportional to the total power of the pulses (which may be inferred by the number of pulses administered). Contrary to this belief, experiments conducted in this study show that the application of high voltage pulses prior to the application of low voltage pulses result in lower transport than when low voltage pulses alone are applied (when less total pulse power is administered). In order to reconcile these unexpected experimental results, a computational model is used to conduct an analysis which shows that the high density distribution of very small aqueous pathways through the stratum corneum associated with high voltage pulses is detrimental to the evolution of larger pathways that are associated with low voltage pulses. Copyright © 2014 Elsevier Inc. All rights reserved.

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors.

PubMed

Kim, David K; Lai, Yuming; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

2012-01-01

Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from high-performance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm(2) V(-1) s(-1), current modulation >10(6) and subthreshold swing of 0.28 V dec(-1). We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode

NASA Astrophysics Data System (ADS)

Wang, Fangzhou; Chen, Wanjun; Wang, Zeheng; Sun, Ruize; Wei, Jin; Li, Xuan; Shi, Yijun; Jin, Xiaosheng; Xu, Xiaorui; Chen, Nan; Zhou, Qi; Zhang, Bo

2017-05-01

To achieve uniform low turn-on voltage and high reverse blocking capability, an AlGaN/GaN power field effect rectifier with trench heterojunction anode (THA-FER) is proposed and investigated in this work which includes only simulated data and no real experimental result. VT has a low saturation value when trench height (HT) is beyond 300 nm, confirming it is possible to control the VT accurately without precisely controlling the HT in the THA-FER. Meanwhile, high HT anode reduces reverse leakage current and yields high breakdown voltage (VB). A superior high Baliga's Figure of Merits (BFOM = VB2/Ron,sp, Ron,sp is specific-on resistance) of 1228 MW/cm2 reveals the THA-FER caters for the demands of high efficiency GaN power applications.

High Power Amplifier and Power Supply

NASA Technical Reports Server (NTRS)

Duong, Johnny; Stride, Scot; Harvey, Wayne; Haque, Inam; Packard, Newton; Ng, Quintin; Ispirian, Julie Y.; Waian, Christopher; Janes, Drew

2008-01-01

A document discusses the creation of a high-voltage power supply (HVPS) that is able to contain voltages up to -20 kV, keep electrical field strengths to below 200 V/mil (approximately equal to 7.87 kV/mm), and can provide a 200-nanosecond rise/fall time focus modulator swinging between cathode potential of 16.3 kV and -19.3 kV. This HVPS can protect the 95-GHz, pulsed extended interaction klystron (EIK) from arcs/discharges from all sources, including those from within the EIK fs vacuum envelope. This innovation has a multi-winding pulse transformer design, which uses new winding techniques to provide the same delays and rise/fall times (less than 10 nanoseconds) at different potential levels ranging from -20 kV to -16 kV. Another feature involves a high-voltage printed-wiring board that was corona-free at -20 kV DC with a 3- kV AC swing. The corona-free multilayer high-voltage board is used to simulate fields of less than 200 V/mil (approximately equal to 7.87 kV/mm) at 20 kV DC. Drive techniques for the modulator FETs (field-effect transistors) (four to 10 in a series) were created to change states (3,000-V swing) without abrupt steps, while still maintaining required delays and transition times. The packing scheme includes a potting mold to house a ten-stage modulator in the space that, in the past, only housed a four-stage modulator. Problems keeping heat down were solved using aluminum oxide substrate in the high-voltage section to limit temperature rise to less than 10 while withstanding -20 kV DC voltage and remaining corona-free.

Gradient-Induced Voltages on 12-Lead ECGs during High Duty-Cycle MRI Sequences and a Method for Their Removal considering Linear and Concomitant Gradient Terms

PubMed Central

Zhang, Shelley HuaLei; Ho Tse, Zion Tsz; Dumoulin, Charles L.; Kwong, Raymond Y.; Stevenson, William G.; Watkins, Ronald; Ward, Jay; Wang, Wei; Schmidt, Ehud J.

2015-01-01

Purpose To restore 12-lead ECG signal fidelity inside MRI by removing magnetic-field gradient induced-voltages during high gradient-duty-cycle sequences. Theory and Methods A theoretical equation was derived, providing first- and second-order electrical fields induced at individual ECG electrode as a function of gradient fields. Experiments were performed at 3T on healthy volunteers, using a customized acquisition system which captured full amplitude and frequency response of ECGs, or a commercial recording system. The 19 equation coefficients were derived by linear regression of data from accelerated sequences, and used to compute induced-voltages in real-time during full-resolution sequences to remove ECG artifacts. Restored traces were evaluated relative to ones acquired without imaging. Results Measured induced-voltages were 0.7V peak-to-peak during balanced Steady-State Free Precession (bSSFP) with heart at the isocenter. Applying the equation during gradient echo sequencing, three-dimensional fast spin echo and multi-slice bSSFP imaging restored nonsaturated traces and second-order concomitant terms showed larger contributions in electrodes farther from the magnet isocenter. Equation coefficients are evaluated with high repeatability (ρ = 0.996) and are subject, sequence, and slice-orientation dependent. Conclusion Close agreement between theoretical and measured gradient-induced voltages allowed for real-time removal. Prospective estimation of sequence-periods where large induced-voltages occur may allow hardware removal of these signals. PMID:26101951

An analog RF gap voltage regulation system for the Advanced Photon Source storage ring.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Horan, D.

1999-04-13

An analog rf gap voltage regulation system has been designed and built at Argonne National Laboratory to maintain constant total storage ring rf gap voltage, independent of beam loading and cavity tuning effects. The design uses feedback control of the klystron mod-anode voltage to vary the amount of rf power fed to the storage ring cavities. The system consists of two independent feedback loops, each regulating the combined rf gap voltages of eight storage ring cavities by varying the output power of either one or two rf stations, depending on the mode of operation. It provides full operator control andmore » permissive logic to permit feedback control of the rf system output power only if proper conditions are met. The feedback system uses envelope-detected cavity field probe outputs as the feedback signal. Two different methods of combining the individual field probe signals were used to generate a relative DC level representing one-half of the total storage ring rf voltage, an envelope-detected vector sum of the field probe rf signals, and the DC sum of individual field probe envelope detector outputs. The merits of both methods are discussed. The klystron high-voltage power supply (HVPS) units are fitted with an analog interface for external control of the mod-anode voltage level, using a four-quadrant analog multiplier to modulate the HVPS mod-anode voltage regulator set-point in response to feedback system commands.« less

High breakdown voltage and high driving current in a novel silicon-on-insulator MESFET with high- and low-resistance boxes in the drift region

NASA Astrophysics Data System (ADS)

Naderi, Ali; Mohammadi, Hamed

2018-06-01

In this paper a novel silicon-on-insulator metal oxide field effect transistor (SOI-MESFET) with high- and low-resistance boxes (HLRB) is proposed. This structure increases the current and breakdown voltage, simultaneously. The semiconductor at the source side of the channel is doped with higher impurity than the other parts to reduce its resistance and increase the driving current as low-resistance box. An oxide box is implemented at the upper part of the channel from the drain region toward the middle of the channel as the high-resistance box. Inserting a high-resistance box increases the breakdown voltage and improves the RF performance of the device because of its higher tolerable electric field and modification in gate-drain capacitance, respectively. The high-resistance region reduces the current density of the device which is completely compensated by low-resistance box. A 92% increase in breakdown voltage and an 11% improvement in the device current have been obtained. Also, maximum oscillation frequency, unilateral power gain, maximum available gain, maximum stable gain, and maximum output power density are improved by 7%, 35%, 23%, 26%, and 150%, respectively. These results show that the HLRB-SOI-MESFET can be considered as a candidate to replace Conventional SOI-MESFET (C-SOI-MESFET) for high-voltage and high-frequency applications.

Low-Voltage Complementary Electronics from Ion-Gel-Gated Vertical Van der Waals Heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Yongsuk; Kang, Junmo; Jariwala, Deep

2016-03-22

Low-voltage complementary circuits comprising n-type and p-type van der Waals heterojunction vertical field-effect transistors (VFETs) are demonstrated. The resulting VFETs possess high on-state current densities (>3000 A cm-2) and on/off current ratios (>104) in a narrow voltage window (<3 V).

Influence of Gap Distance on Vacuum Arc Characteristics of Cup Type AMF Electrode in Vacuum Interrupters

NASA Astrophysics Data System (ADS)

Cheng, Shaoyong; Xiu, Shixin; Wang, Jimei; Shen, Zhengchao

2006-11-01

The greenhouse effect of SF6 is a great concern today. The development of high voltage vacuum circuit breakers becomes more important. The vacuum circuit breaker has minimum pollution to the environment. The vacuum interrupter is the key part of a vacuum circuit breaker. The interrupting characteristics in vacuum and arc-controlling technique are the main problems to be solved for a longer gap distance in developing high voltage vacuum interrupters. To understand the vacuum arc characteristics and provide effective technique to control vacuum arc in a long gap distance, the arc mode transition of a cup-type axial magnetic field electrode is observed by a high-speed charge coupled device (CCD) video camera under different gap distances while the arc voltage and arc current are recorded. The controlling ability of the axial magnetic field on vacuum arc obviously decreases when the gap distance is longer than 40 mm. The noise components and mean value of the arc voltage significantly increase. The effective method for controlling the vacuum arc characteristics is provided by long gap distances based on the test results. The test results can be used as a reference to develop high voltage and large capacity vacuum interrupters.

Spin pumping and inverse spin Hall voltages from dynamical antiferromagnets

NASA Astrophysics Data System (ADS)

Johansen, Øyvind; Brataas, Arne

2017-06-01

Dynamical antiferromagnets can pump spins into adjacent conductors. The high antiferromagnetic resonance frequencies represent a challenge for experimental detection, but magnetic fields can reduce these resonance frequencies. We compute the ac and dc inverse spin Hall voltages resulting from dynamical spin excitations as a function of a magnetic field along the easy axis and the polarization of the driving ac magnetic field perpendicular to the easy axis. We consider the insulating antiferromagnets MnF2,FeF2, and NiO. Near the spin-flop transition, there is a significant enhancement of the dc spin pumping and inverse spin Hall voltage for the uniaxial antiferromagnets MnF2 and FeF2. In the uniaxial antiferromagnets it is also found that the ac spin pumping is independent of the external magnetic field when the driving field has the optimal circular polarization. In the biaxial NiO, the voltages are much weaker, and there is no spin-flop enhancement of the dc component.

Improved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors.

PubMed

Song, Seung Min; Bong, Jae Hoon; Hwang, Wan Sik; Cho, Byung Jin

2016-05-04

Graphene devices for radio frequency (RF) applications are of great interest due to their excellent carrier mobility and saturation velocity. However, the insufficient current saturation in graphene field effect transistors (FETs) is a barrier preventing enhancements of the maximum oscillation frequency and voltage gain, both of which should be improved for RF transistors. Achieving a high output resistance is therefore a crucial step for graphene to be utilized in RF applications. In the present study, we report high output resistances and voltage gains in graphene-on-silicon (GoS) FETs. This is achieved by utilizing bare silicon as a supporting substrate without an insulating layer under the graphene. The GoSFETs exhibit a maximum output resistance of 2.5 MΩ∙μm, maximum intrinsic voltage gain of 28 dB, and maximum voltage gain of 9 dB. This method opens a new route to overcome the limitations of conventional graphene-on-insulator (GoI) FETs and subsequently brings graphene electronics closer to practical usage.

1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

DOE PAGES

Zhu, Mingda; Song, Bo; Qi, Meng; ...

2015-02-16

In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance R ON,SP (5.12 mΩ · cm 2), a low turn-on voltage (<0.7 V) and a high reverse breakdown voltage BV (>1.9 kV), were simultaneously achieved in devices with a 25 μm anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/R ON,SP of 727 MW·cm 2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

Reversible voltage dependent transition of abnormal and normal bipolar resistive switching.

PubMed

Wang, Guangyu; Li, Chen; Chen, Yan; Xia, Yidong; Wu, Di; Xu, Qingyu

2016-11-14

Clear understanding the mechanism of resistive switching is the important prerequisite for the realization of high performance nonvolatile resistive random access memory. In this paper, binary metal oxide MoO x layer sandwiched by ITO and Pt electrodes was taken as a model system, reversible transition of abnormal and normal bipolar resistive switching (BRS) in dependence on the maximum voltage was observed. At room temperature, below a critical maximum voltage of 2.6 V, butterfly shaped I-V curves of abnormal BRS has been observed with low resistance state (LRS) to high resistance state (HRS) transition in both polarities and always LRS at zero field. Above 2.6 V, normal BRS was observed, and HRS to LRS transition happened with increasing negative voltage applied. Temperature dependent I-V measurements showed that the critical maximum voltage increased with decreasing temperature, suggesting the thermal activated motion of oxygen vacancies. Abnormal BRS has been explained by the partial compensation of electric field from the induced dipoles opposite to the applied voltage, which has been demonstrated by the clear amplitude-voltage and phase-voltage hysteresis loops observed by piezoelectric force microscopy. The normal BRS was due to the barrier modification at Pt/MoO x interface by the accumulation and depletion of oxygen vacancies.

MCT/MOSFET Switch

NASA Technical Reports Server (NTRS)

Rippel, Wally E.

1990-01-01

Metal-oxide/semiconductor-controlled thyristor (MCT) and metal-oxide/semiconductor field-effect transistor (MOSFET) connected in switching circuit to obtain better performance. Offers high utilization of silicon, low forward voltage drop during "on" period of operating cycle, fast turnon and turnoff, and large turnoff safe operating area. Includes ability to operate at high temperatures, high static blocking voltage, and ease of drive.

Voltage control of ferromagnetic resonance

NASA Astrophysics Data System (ADS)

Zhou, Ziyao; Peng, Bin; Zhu, Mingmin; Liu, Ming

2016-05-01

Voltage control of magnetism in multiferroics, where the ferromagnetism and ferroelectricity are simultaneously exhibiting, is of great importance to achieve compact, fast and energy efficient voltage controllable magnetic/microwave devices. Particularly, these devices are widely used in radar, aircraft, cell phones and satellites, where volume, response time and energy consumption is critical. Researchers realized electric field tuning of magnetic properties like magnetization, magnetic anisotropy and permeability in varied multiferroic heterostructures such as bulk, thin films and nanostructure by different magnetoelectric (ME) coupling mechanism: strain/stress, interfacial charge, spin-electromagnetic (EM) coupling and exchange coupling, etc. In this review, we focus on voltage control of ferromagnetic resonance (FMR) in multiferroics. ME coupling-induced FMR change is critical in microwave devices, where the electric field tuning of magnetic effective anisotropic field determines the tunability of the performance of microwave devices. Experimentally, FMR measurement technique is also an important method to determine the small effective magnetic field change in small amount of magnetic material precisely due to its high sensitivity and to reveal the deep science of multiferroics, especially, voltage control of magnetism in novel mechanisms like interfacial charge, spin-EM coupling and exchange coupling.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, X.; Yao, C.

A prototype dual-blade stripline kicker for the APS multi-bend achromat (MBA) upgrade has been designed and developed. It was optimized with 3D CST Microwave Studio. The high voltage (HV) feedthrough and air-side connector were designed and optimized. Electromagnetic fields along the beam path, the deflecting angle, the high electric fields and their locations were calculated with 15kV differential pulse voltage applied to the kicker blades through the feedthroughs. Beam impedance and the power dissipation on different parts of the kicker and external loads were studied for a 48-bunch fill pattern. Our results show that the prototype kicker with its HVmore » feedthroughs meets the specified requirements. The results of TDR (time-domain reflectometer) test, high voltage pulse test and beam test of the prototype kicker assembly agreed with the simulations.« less

A Spherical Electro Optic High Voltage Sensor

DTIC Science & Technology

1989-06-01

electro - optic (EO) crystal is introduced for photonic measurement of pulsed high-voltage fields. A spherical shape is used in order to reduce electric field gradients in the vicinity of the sensor. The sensor is pure dielectric and is interrogated remotely using a laser. The sensor does not require the connection of any conducting components, which results in the highest electrical isolation. The spherical nature of the crystal coupled with the incident laser beam, and crossed polarizers (intensity modulation scheme). automatically produces interference figures. The

Nonferromagnetic linear variable differential transformer

DOEpatents

Ellis, James F.; Walstrom, Peter L.

1977-06-14

A nonferromagnetic linear variable differential transformer for accurately measuring mechanical displacements in the presence of high magnetic fields is provided. The device utilizes a movable primary coil inside a fixed secondary coil that consists of two series-opposed windings. Operation is such that the secondary output voltage is maintained in phase (depending on polarity) with the primary voltage. The transducer is well-suited to long cable runs and is useful for measuring small displacements in the presence of high or alternating magnetic fields.

Electro-optic voltage sensor for sensing voltage in an E-field

DOEpatents

Woods, G.K.; Renak, T.W.

1999-04-06

A miniature electro-optic voltage sensor system capable of accurate operation at high voltages is disclosed. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam`s polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured. 18 figs.

Electro-optic voltage sensor for sensing voltage in an E-field

DOEpatents

Woods, Gregory K.; Renak, Todd W.

1999-01-01

A miniature electro-optic voltage sensor system capable of accurate operation at high voltages. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

Arc Voltage Between Deion Grid Affected by Division of Arc in Magnetic Driven Arc

NASA Astrophysics Data System (ADS)

Inuzuka, Yutaro; Yamato, Takashi; Yamamoto, Shinji; Iwao, Toru

2016-10-01

Magnetic driven arc has been applied to DC breaker and fault current limiters. However, it has not been researched, especially stagnation and re-strike of the arc. In this paper, the arc voltage between deion grid affected by division of arc in magnetic driven arc and arc behavior are measured by using the oscilloscope and HSVC (High Speed Video Camera). As a result, arc voltage increased because of division of the arc. The arc mean moving speed increases with increasing the external magnetic field. However, when the arc was not stalemate, the arc moving speed does not change so much. The arc re-strike time increases and stalemate time decreases with increasing the external magnetic field. Therefore, the anode spot moving speed increases 8 times because arc re-strike occurs easily with the external magnetic field. Thus, the erosion of electrodes decreases and the arc movement becomes the smooth. When the arc is divided, the arc voltage increased because of the electrode fall voltage. Therefore, the arc voltage increases with increasing the number of deion grid.

Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film.

PubMed

Park, Jeongmin; Kang, Haeyong; Kang, Kyeong Tae; Yun, Yoojoo; Lee, Young Hee; Choi, Woo Seok; Suh, Dongseok

2016-03-09

Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO single-crystal substrate offers good adhesion between the high-k film and graphene, resulting in nonhysteretic conductance as a function of gate voltage at all temperatures down to 2 K. The two-terminal conductance quantization under magnetic fields corresponding to quantum Hall states survives up to 200 K at a magnetic field of 14 T. In addition, the substantial shift of charge neutrality point in graphene seems to correlate with the temperature-dependent dielectric constant of the STO thin film, and its effective dielectric properties could be deduced from the universality of quantum phenomena in graphene. Our experimental data prove that the operating voltage reduction can be successfully realized due to the underlying high-k STO thin film, without any noticeable degradation of graphene device performance.

Stability of Triggering of the Switch with Sharply Non-Uniform Electric Field at the Electrode with Negative Potential

NASA Astrophysics Data System (ADS)

Kovalchuk, B. M.; Zherlitsyn, A. A.; Kumpyak, E. V.

2017-12-01

Results of investigations into a two-electrode high-pressure gas switch with sharply non-uniform field at the electrode with negative potential operating in the self-breakdown regime with pulsed charging of a highvoltage capacitive energy storage for 100 μs to voltage exceeding 200 kV are presented. It is demonstrated that depending on the air pressure and the gap length, the corona-streamer discharge, whose current increases with voltage, arises in the switch at a voltage of 0.2-0.3 of the self-breakdown voltage. At the moment of switch self-breakdown, the corona-streamer discharge goes over to one or several spark channels. The standard deviation of the triggering moment can be within 1.5 μs, which corresponds to the standard deviation of the self-breakdown voltage less than 2 kV. The voltage stability can be better than 1.5%.

Achieving high mobility, low-voltage operating organic field-effect transistor nonvolatile memory by an ultraviolet-ozone treating ferroelectric terpolymer

PubMed Central

Xiang, Lanyi; Wang, Wei; Xie, Wenfa

2016-01-01

Poly(vinylidene fluoride–trifluoroethylene) has been widely used as a dielectric of the ferroelectric organic field-effect transistor (FE-OFET) nonvolatile memory (NVM). Some critical issues, including low mobility and high operation voltage, existed in these FE-OFET NVMs, should be resolved before considering to their commercial application. In this paper, we demonstrated low-voltage operating FE-OFET NVMs based on a ferroelectric terpolymer poly(vinylidene-fluoride-trifluoroethylene-chlorotrifluoroethylene) [P(VDF-TrFE-CTFE)] owed to its low coercive field. By applying an ultraviolet-ozone (UVO) treatment to modify the surface of P(VDF-TrFE-CTFE) films, the growth model of the pentacene film was changed, which improved the pentacene grain size and the interface morphology of the pentacene/P(VDF-TrFE-CTFE). Thus, the mobility of the FE-OFET was significantly improved. As a result, a high performance FE-OFET NVM, with a high mobility of 0.8 cm2 V−1 s−1, large memory window of 15.4~19.2, good memory on/off ratio of 103, the reliable memory endurance over 100 cycles and stable memory retention ability, was achieved at a low operation voltage of ±15 V. PMID:27824101

The smooth transition from field emission to a self-sustained plasma in microscale electrode gaps at atmospheric pressure

NASA Astrophysics Data System (ADS)

Bilici, Mihai A.; Haase, John R.; Boyle, Calvin R.; Go, David B.; Sankaran, R. Mohan

2016-06-01

We report on the existence of a smooth transition from field emission to a self-sustained plasma in microscale electrode geometries at atmospheric pressure. This behavior, which is not found at macroscopic scales or low pressures, arises from the unique combination of large electric fields that are created in microscale dimensions to produce field-emitted electrons and the high pressures that lead to collisional ionization of the gas. Using a tip-to-plane electrode geometry, currents less than 10 μA are measured at onset voltages of ˜200 V for gaps less than 5 μm, and analysis of the current-voltage (I-V) relationship is found to follow Fowler-Nordheim behavior, confirming field emission. As the applied voltage is increased, gas breakdown occurs smoothly, initially resulting in the formation of a weak, partial-like glow and then a self-sustained glow discharge. Remarkably, this transition is essentially reversible, as no significant hysteresis is observed during forward and reverse voltage sweeps. In contrast, at larger electrode gaps, no field emission current is measured and gas breakdown occurs abruptly at higher voltages of ˜400 V, absent of any smooth transition from the pre-breakdown condition and is characterized only by glow discharge formation.

High-voltage lateral double-implanted MOSFETs implemented on high-purity semi-insulating 4H-SiC substrates with gate field plates

NASA Astrophysics Data System (ADS)

Seok, Ogyun; Kim, Hyoung Woo; Moon, Jeong Hyun; Lee, Hyun-Su; Bahng, Wook

2018-06-01

Lateral double-implanted MOSFETs (LDIMOSFETs) fabricated on on-axis high-purity semi-insulating (HPSI) 4H-SiC substrates with gate field plates have been demonstrated for the enhancement of reverse blocking capability. The effects of gate field plate on LDIMOSFET were analyzed by simulation and experimental methods. The electric field concentration at the gate edge was successfully suppressed by a gate field plate. A high breakdown voltage of 934 V and a figure of merit of 14.6 MW/cm2 were achieved at L FP of 2 µm and L drift of 15 µm, while those of the conventional device without a gate field plate were 744 V and 13.3 MW/cm2, respectively. Also, the fabricated device shows stable blocking characteristics at a high temperature of 250 °C. The drain leakage was increased by only 22% at 250 °C compared with that at room temperature.

Special features of large-size resistors for high-voltage pulsed installations

NASA Astrophysics Data System (ADS)

Minakova, N. N.; Ushakov, V. Ya.

2017-12-01

Many structural materials in pulsed power engineering operate under extreme conditions. For example, in high-voltage electrophysical installations among which there are multistage high-voltage pulse generators (HVPG), rigid requirements are imposed on characteristics of solid-state resistors that are more promising in comparison with widely used liquid resistors. Materials of such resistors shall be able to withstand strong electric fields, operate at elevated temperatures, in transformer oil, etc. Effective charge of high-voltage capacitors distributed over the HVPG steps (levels) requires uniform voltage distribution along the steps of the installation that can be obtained using large-size resistors. For such applications, polymer composite materials are considered rather promising. They can work in transformer oil and have small mass in comparison with bulky resistors on inorganic basis. This allows technical solutions already developed and implemented in HVPG with liquid resistors to be employed. This paper is devoted to the solution of some tasks related to the application of filled polymers in high-voltage engineering.

Non-intrusive high voltage measurement using slab coupled optical sensors

NASA Astrophysics Data System (ADS)

Stan, Nikola; Chadderdon, Spencer; Selfridge, Richard H.; Schultz, Stephen M.

2014-03-01

We present an optical fiber non-intrusive sensor for measuring high voltage transients. The sensor converts the unknown voltage to electric field, which is then measured using slab-coupled optical fiber sensor (SCOS). Since everything in the sensor except the electrodes is made of dielectric materials and due to the small field sensor size, the sensor is minimally perturbing to the measured voltage. We present the details of the sensor design, which eliminates arcing and minimizes local dielectric breakdown using Teflon blocks and insulation of the whole structure with transformer oil. The structure has a capacitance of less than 3pF and resistance greater than 10 GΩ. We show the measurement of 66.5 kV pulse with a 32.6μs time constant. The measurement matches the expected value of 67.8 kV with less than 2% error.

Mass spectrometric characterization of a high-field asymmetric waveform ion mobility spectrometer

NASA Astrophysics Data System (ADS)

Purves, Randy W.; Guevremont, Roger; Day, Stephen; Pipich, Charles W.; Matyjaszczyk, Matthew S.

1998-12-01

Ion mobility spectrometry (IMS) has become an important method for the detection of many compounds because of its high sensitivity and amenability to miniaturization for field-portable monitoring; applications include detection of narcotics, explosives, and chemical warfare agents. High-field asymmetric waveform ion mobility spectrometry (FAIMS) differs from IMS in that the electric fields are applied using a high-frequency periodic asymmetric waveform, rather than a dc voltage. Furthermore, in FAIMS the compounds are separated by the difference in the mobility of ions at high electric field relative to low field, rather than by compound to compound differences in mobility at low electric field (IMS). We report here the first cylindrical-geometry-FAIMS interface with mass spectrometry (FAIMS-MS) and the MS identification of the peaks observed in a FAIMS compensation voltage (CV) spectrum. Using both an electrometer-based-FAIMS (FAIMS-E) and FAIMS-MS, several variables that affect the sensitivity of ion detection were examined for two (polarity reversed) asymmetric waveforms (modes 1 and 2) each of which yields a unique spectrum. An increase in the dispersion voltage (DV) was found to improve the sensitivity and separation observed in the FAIMS CV spectrum. This increase in sensitivity and the unexpected dissimilarity in modes 1 and 2 suggest that atmospheric pressure ion focusing is occurring in the FAIMS analyzer. The sensitivity and peak locations in the CV spectra were affected by temperature, gas flow rates, operating pressure, and analyte concentration.

Spectral features and voltage effects in high-field electroluminescence of AlN filamentary nanocrystals

NASA Astrophysics Data System (ADS)

Weinstein, I. A.; Vokhmintsev, A. S.; Chaikin, D. V.; Afonin, Yu. D.

2016-11-01

The high-field electroluminescence (EL) spectra for Al-rich AlN nanowhiskers varying applied voltage were studied. The observed 2.70 eV emission, which can be considered as superposition of two Gaussian bands in 2.75 and 2.53 eV, was analyzed. It was shown that Fowler-Nordheim effect took place in EL mechanism with participation of capturing levels of ON- and VN-centers when AlN nanowhiskers were exposed to an external field of 2.5 ÷ 10 V/μm. Obtained results and made conclusions are in a good agreement with independent electron field emission measurements for different one-dimensional AlN nanostructures.

The effects of magnetic field in plume region on the performance of multi-cusped field thruster

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Peng, E-mail: hupengemail@126.com; Liu, Hui, E-mail: thruster@126.com; Yu, Daren

2015-10-15

The performance characteristics of a Multi-cusped Field Thruster depending on the magnetic field in the plume region were investigated. Five magnetic field shielding rings were separately mounted near the exit of discharge channel to decrease the strength of magnetic field in the plume region in different levels, while the magnetic field in the upstream was well maintained. The test results show that the electron current increases with the decrease of magnetic field strength in the plume region, which gives rise to higher propellant utilization and lower current utilization. On the other hand, the stronger magnetic field in the plume regionmore » improves the performance at low voltages (high current mode) while lower magnetic field improves the performance at high voltages (low current mode). This work can provide some optimal design ideas of the magnetic strength in the plume region to improve the performance of thruster.« less

Unpinning of rotating spiral waves in cardiac tissues by circularly polarized electric fields

PubMed Central

Feng, Xia; Gao, Xiang; Pan, De-Bei; Li, Bing-Wei; Zhang, Hong

2014-01-01

Spiral waves anchored to obstacles in cardiac tissues may cause lethal arrhythmia. To unpin these anchored spirals, comparing to high-voltage side-effect traditional therapies, wave emission from heterogeneities (WEH) induced by the uniform electric field (UEF) has provided a low-voltage alternative. Here we provide a new approach using WEH induced by the circularly polarized electric field (CPEF), which has higher success rate and larger application scope than UEF, even with a lower voltage. And we also study the distribution of the membrane potential near an obstacle induced by CPEF to analyze its mechanism of unpinning. We hope this promising approach may provide a better alternative to terminate arrhythmia. PMID:24777360

A theoretical approach to study the optical sensitivity of a MESFET

NASA Astrophysics Data System (ADS)

Dutta, Sutanu

2018-05-01

A theoretical model to study the optical sensitivity of a metal-semiconductor field effect transistor has been proposed for a relatively high drain field. An analytical expression of drain current of the device has been derived for a MESFET under optical illumination considering field dependent mobility of electrons across the channel. The variation of drain current with and without optical illumination has been studied with drain and gate voltages. The optical sensitivity of the drain current has been studied for different biasing conditions and gate lengths. In addition, the shift in threshold voltage of a MESFET under optical illumination is determined and optical sensitivity of the device in terms of its threshold voltage has been studied.

30 CFR 75.705-1 - Work on high-voltage lines.

Code of Federal Regulations, 2012 CFR

2012-07-01

... power system, either the steel armor or conduit enclosing the system or a surface grounding field is a... supported by any pole or structure which also supports other high-voltage lines until: (1) All lines supported on the pole or structure are deenergized and grounded in accordance with all of the provisions of...

30 CFR 75.705-1 - Work on high-voltage lines.

Code of Federal Regulations, 2014 CFR

2014-07-01

... power system, either the steel armor or conduit enclosing the system or a surface grounding field is a... supported by any pole or structure which also supports other high-voltage lines until: (1) All lines supported on the pole or structure are deenergized and grounded in accordance with all of the provisions of...

30 CFR 75.705-1 - Work on high-voltage lines.

Code of Federal Regulations, 2013 CFR

2013-07-01

... power system, either the steel armor or conduit enclosing the system or a surface grounding field is a... supported by any pole or structure which also supports other high-voltage lines until: (1) All lines supported on the pole or structure are deenergized and grounded in accordance with all of the provisions of...

30 CFR 77.704-1 - Work on high-voltage lines.

Code of Federal Regulations, 2012 CFR

2012-07-01

... ungrounded power system, either the steel armor or conduit enclosing the system or a surface grounding field... supported by any pole or structure which also supports other high-voltage lines until: (1) All lines supported on the pole or structure are deenergized and grounded in accordance with all of the provisions of...

30 CFR 77.704-1 - Work on high-voltage lines.

Code of Federal Regulations, 2013 CFR

2013-07-01

... ungrounded power system, either the steel armor or conduit enclosing the system or a surface grounding field... supported by any pole or structure which also supports other high-voltage lines until: (1) All lines supported on the pole or structure are deenergized and grounded in accordance with all of the provisions of...

30 CFR 77.704-1 - Work on high-voltage lines.

Code of Federal Regulations, 2014 CFR

2014-07-01

... ungrounded power system, either the steel armor or conduit enclosing the system or a surface grounding field... supported by any pole or structure which also supports other high-voltage lines until: (1) All lines supported on the pole or structure are deenergized and grounded in accordance with all of the provisions of...

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Held, Martin; Schießl, Stefan P.; Gannott, Florentina

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states atmore » the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.« less

Controllable transition from positive space charge to negative space charge in an inverted cylindrical magnetron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rane, R., E-mail: ramu@ipr.res.in; Ranjan, M.; Mukherjee, S.

2016-01-15

The combined effect of magnetic field (B), gas pressure (P), and the corresponding discharge voltage on the discharge properties of argon in inverted cylindrical magnetron has been investigated. In the experiment, anode is biased with continuous 10 ms sinusoidal half wave. It is observed that at a comparatively higher magnetic field (i.e., >200 gauss) and lower operating pressure (i.e., <1 × 10{sup −3} mbar), the discharge extinguishes and demands a high voltage to reignite. Discharge current increases with increase in magnetic field and starts reducing at sufficiently higher magnetic field for a particular discharge voltage due to restricted electron diffusion towards the anode.more » It is observed that B/P ratio plays an important role in sustaining the discharge and is constant for a discharge voltage. The discharge is transformed to negative space charge regime from positive space charge regime at certain B/P ratio and this ratio varies linearly with the discharge voltage. The space charge reversal is indicated by the radial profile of the floating potential and plasma potential in between two electrodes for different magnetic fields. At a particular higher magnetic field (beyond 100 gauss), the floating potential increases gradually with the radial distance from cathode, whereas it remains almost constant at lower magnetic field.« less

High Voltage Tests in the LUX-ZEPLIN System Test

NASA Astrophysics Data System (ADS)

Whitis, Thomas; Lux-Zeplin Collaboration

2016-03-01

The LUX-ZEPLIN (LZ) project is a dark matter direct detection experiment using liquid xenon. The detector is a time projection chamber (TPC) requiring the establishment of a large electric field inside of the detector in order to drift ionization electrons. Historically, many xenon TPC designs have been unable to reach their design fields due to light production and breakdown. The LZ System Test is scaled so that with a cathode voltage of -50 kV, it will have the fields that will be seen in the LZ detector at -100 kV. It will use a fully instrumented but scaled-down version of the LZ TPC design with a vessel set and gas system designed for quick turnaround, allowing for iterative modifications to the TPC prototype and instrumentation. This talk will present results from the high voltage tests performed during the first runs of the LZ System Test.

Temperature increase and charging current in polyethylene film during application of high voltage

NASA Astrophysics Data System (ADS)

Zhang, Chao; Kaneko, Kazue; Mizutani, Teruyoshi

2001-12-01

Temperature increase in a low density polyethylene film during the application of high dc voltage was estimated by measuring the sound velocity with a pulsed electroacoustic method. The temperature shows no change under the electric field of 50 MVm-1 at ambient temperature of 30 °C. However, the temperature increases with time, and rises to 63.7 °C in 90 min of the voltage application at ambient temperature of 60 °C. The temperature increase was caused by Joule heating and it resulted in the increase of charging current during the application of high dc voltage. The increase in charging current calculated from the temperature increase agreed well with the experimental one.

Atmospheric pressure ion focusing in a high-field asymmetric waveform ion mobility spectrometer

NASA Astrophysics Data System (ADS)

Guevremont, Roger; Purves, Randy W.

1999-02-01

The focusing of ions at atmospheric pressure and room temperature in a high-field asymmetric waveform ion mobility spectrometer (FAIMS) has been investigated. FAIMS operates with the application of a high-voltage, high-frequency asymmetric waveform across parallel plates. This establishes conditions wherein an ion migrates towards one of the plates because of a difference in the ion mobility at the low and high electric field conditions during application of the waveform. The migration can be stopped by applying a dc compensation voltage (CV) which serves to create a "balanced" condition wherein the ion experiences no net transverse motion. This method has also been called "transverse field compensation ion mobility spectrometry" and "field ion spectrometry®." If this experiment is conducted using a device with cylindrical geometry, rather than with flat plates, an ion focusing region can exist in the annular space between the two concentric cylinders. Ion trajectory modeling showed that the behavior of the ions in the cylindrical geometry FAIMS analyzer was unlike any previously described atmospheric pressure ion optics system. The ions appeared to be trapped, or focused by being caught between two opposing forces. Requirements for establishing this focus for a given ion were identified: the applied waveform must be asymmetric, the electric field must be sufficiently high that the mobility of the ion deviates from its low-field value during the high-voltage portion of the asymmetric waveform, and finally, the electric field must be nonuniform in space (e.g., cylindrical or spherical geometry). Experimental observations with a prototype FAIMS device, which was designed to measure the radial distribution of ions in the FAIMS analyzer region, have confirmed the results of ion trajectory modeling.

Study on the streamer inception characteristics under positive lightning impulse voltage

NASA Astrophysics Data System (ADS)

Wang, Zezhong; Geng, Yinan

2017-11-01

The streamer is the main process in an air gap discharge, and the inception characteristics of streamers have been widely applied in engineering. Streamer inception characteristics under DC voltage have been studied by many researchers, but the inception characteristics under impulse voltage, and particularly under lightning impulse voltage with a high voltage rise rate have rarely been studied. A measurement system based on integrated optoelectronic technology has been proposed in this paper, and the streamer inception characteristics in a 1-m-long rod-plane air gap that was energized by a positive lightning impulse voltage have been researched. We have also measured the streamer inception electric field using electrodes with different radii of curvature and different voltage rise rates. As a result, a modified empirical criterion for the streamer inception electric field that considers the voltage rise rate has been proposed, and the wide applicability of this criterion has been proved. Based on the streamer inception time-lag obtained, we determined that the field distribution obeys a Rayleigh distribution, which explains the change law of the streamer inception time-lag. The characteristic parameter of the Rayleigh distribution lies in the range from 0.6 to 2.5 when the radius of curvature of the electrode head is in the range from 0.5 cm to 2.5 cm and the voltage rise rate ranges from 80 kV/μs to 240kV/μs under positive lightning impulse voltage.

High-Field Fast-Risetime Pulse Failures in 4H- and 6H-SiC pn Junction Diodes

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Fazi, Christian

1996-01-01

We report the observation of anomalous reverse breakdown behavior in moderately doped (2-3 x 10(exp 17 cm(exp -3)) small-area micropipe-free 4H- and 6H-SiC pn junction diodes. When measured with a curve tracer, the diodes consistently exhibited very low reverse leakage currents and sharp repeatable breakdown knees in the range of 140-150 V. However, when subjected to single-shot reverse bias pulses (200 ns pulsewidth, 1 ns risetime), the diodes failed catastrophically at pulse voltages of less than 100 V. We propose a possible mechanism for this anomalous reduction in pulsed breakdown voltage relative to dc breakdown voltage. This instability must be removed so that SiC high-field devices can operate with the same high reliability as silicon power devices.

The high voltage homopolar generator

NASA Astrophysics Data System (ADS)

Price, J. H.; Gully, J. H.; Driga, M. D.

1986-11-01

System and component design features of proposed high voltage homopolar generator (HVHPG) are described. The system is to have an open circuit voltage of 500 V, a peak output current of 500 kA, 3.25 MJ of stored inertial energy and possess an average magnetic-flux density of 5 T. Stator assembly components are discussed, including the stator, mount structure, hydrostatic bearings, main and motoring brushgears and rotor. Planned operational procedures such as monitoring the rotor to full speed and operation with a superconducting field coil are delineated.

Low-voltage operating flexible ferroelectric organic field-effect transistor nonvolatile memory with a vertical phase separation P(VDF-TrFE-CTFE)/PS dielectric

NASA Astrophysics Data System (ADS)

Xu, Meili; Xiang, Lanyi; Xu, Ting; Wang, Wei; Xie, Wenfa; Zhou, Dayu

2017-10-01

Future flexible electronic systems require memory devices combining low-power operation and mechanical bendability. However, high programming/erasing voltages, which are universally needed to switch the storage states in previously reported ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memories (NVMs), severely prevent their practical applications. In this work, we develop a route to achieve a low-voltage operating flexible Fe-OFET NVM. Utilizing vertical phase separation, an ultrathin self-organized poly(styrene) (PS) buffering layer covers the surface of the ferroelectric polymer layer by one-step spin-coating from their blending solution. The ferroelectric polymer with a low coercive field contributes to low-voltage operation in the Fe-OFET NVM. The polymer PS contributes to the improvement of mobility, attributing to screening the charge scattering and decreasing the surface roughness. As a result, a high performance flexible Fe-OFET NVM is achieved at the low P/E voltages of ±10 V, with a mobility larger than 0.2 cm2 V-1 s-1, a reliable P/E endurance over 150 cycles, stable data storage retention capability over 104 s, and excellent mechanical bending durability with a slight performance degradation after 1000 repetitive tensile bending cycles at a curvature radius of 5.5 mm.

Bias-stress characterization of solution-processed organic field-effect transistor based on highly ordered liquid crystals

NASA Astrophysics Data System (ADS)

Kunii, M.; Iino, H.; Hanna, J.

2017-06-01

Bias-stress effects in solution-processed, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10) field effect transistors (FETs) are studied under negative and positive direct current bias. The bottom gate, bottom contact polycrystalline Ph-BTBT-10 FET with a hybrid gate dielectric of polystyrene and SiO2 shows high field effect mobility as well as a steep subthreshold slope when fabricated with a highly ordered smectic E liquid crystalline (SmE) film as a precursor. Negative gate bias-stress causes negative threshold voltage shift (ΔVth) for Ph-BTBT-10 FET in ambient air, but ΔVth rapidly decreases as the gate bias decreases and approaches to near zero when the gate bias goes down to 9 V in amplitude. In contrast, positive gate bias-stress causes negligible ΔVth even with a relatively high bias voltage. These results conclude that Ph-BTBT-10 FET has excellent bias-stress stability in ambient air in the range of low to moderate operating voltages.

Electron emission phenomena controlled by a transverse electric field in compound emitters

NASA Astrophysics Data System (ADS)

Olesik, Jadwiga; Calusinski, Bogdan; Olesik, Zygmunt

1996-09-01

Influence of an inner electric field on such emission phenomena like: secondary emission, photoemission and field emission has been investigated. The applied sample-emitter was a glass wafer (thickness 0.2 mm) covered on both sides by semiconducting films In2O3:Sn. A voltage (in the interval -2000V divided by 0V) generating transverse electric field was applied to one of the films. This film had a thickness of about 200 nm. The second film (emitting electrons) had a thickness 100 nm or 10 nm. The secondary emission measurements were made by the retarding field method using four grid retarding potential analyzer. It was found that the secondary emission coefficient changes non- monotonically with increasing field intensity. Electron emission measurements without using a primary electron beam were made with the electron multiplier cooperating with a multichannel pulse amplitude analyzer. The measurements were performed in the vacuum of about 2 multiplied by 10-6 Pa. Influence of film thickness on the intensity of field controlled emission and field controlled photoemission was also studied. It was also found that the frequency of counts (generated by electrons in the electron multiplier) depends on the polarizing voltage approximately in an exponential way. Some departures from this dependence can be observed at higher Upol voltages (above 1000 V). Thus, at an appropriate high voltage Upol conditions for a cascade emission are created. At lower voltages the conditions correspond to a semiconductor with a negative electron affinity.

Liquid Nitrogen as Fast High Voltage Switching Medium

NASA Astrophysics Data System (ADS)

Dickens, J.; Neuber, A.; Haustein, M.; Krile, J.; Krompholz, H.

2002-12-01

Compact pulsed power systems require new switching technologies. For high voltages, liquid nitrogen seems to be a suitable switching medium, with high hold-off voltage, low dielectric constant, and no need for pressurized systems as in high pressure gas switches. The discharge behavior in liquid nitrogen, such as breakdown voltages, formative times, current rise as function of voltage, recovery, etc. are virtually unknown, however. The phenomenology of breakdown in liquid nitrogen is investigated with high speed (temporal resolution < 1 ns) electrical and optical diagnostics, in a coaxial system with 50-Ohm impedance. Discharge current and voltage are determined with transmission line type current sensors and capacitive voltage dividers. The discharge luminosity is measured with photomultiplier tubes. Preliminary results of self-breakdown investigations (gap 1 mm, breakdown voltage 44 kV, non-boiling supercooled nitrogen) show a fast (2 ns) transition from an unknown current level to several mA, a long-duration (100 ns) phase with constant current superimposed by ns-spikes, and a final fast transition to the impedance limited current during several nanoseconds. The optical measurements will be expanded toward spectroscopy and high speed photography with the aim of clarifying the overall breakdown mechanisms, including electronic initiation, bubble formation, bubble dynamics, and their role in breakdown, for different electrode geometries (different macroscopic field enhancements).

Five years of full-scale utility demonstration of pulsed energization of electric precipitators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schultz, S.A.; Jacobus, P.L.; Casey, P.J.

1996-11-01

In a conventional electrostatic precipitator (ESP) the applied dc voltage fulfills three functions: (1) generation of negative ions, (2) charging of particles, and (3) transport of the charged particles to the collecting plates. In the case of high resistivity fly-ash (often associated with the burning of low sulfur coal) the dc voltage is limited by repeated electrical discharges and in extreme cases by back-corona. Lowering the applied dc voltage reduces sparking and back-corona, but also reduces the field on the discharge wires and leads to poorly distributed ion generation as well as reduced charging and particle transport forces. Pulsed energization,more » which consists of superimposing high voltage pulses of short duration onto the existing base dc voltage, offers an attractive way to improve the collection efficiency of ESPs suffering from poor energization. The superimposed pulses become responsible for uniform ion generation while the underlying dc field continues to fulfill the function of particle charging and transport. This paper describes the five-year test of the ESP at Madison Gas and Electric`s Blount Station.« less

Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors

PubMed Central

Song, Seung Min; Bong, Jae Hoon; Hwang, Wan Sik; Cho, Byung Jin

2016-01-01

Graphene devices for radio frequency (RF) applications are of great interest due to their excellent carrier mobility and saturation velocity. However, the insufficient current saturation in graphene field effect transistors (FETs) is a barrier preventing enhancements of the maximum oscillation frequency and voltage gain, both of which should be improved for RF transistors. Achieving a high output resistance is therefore a crucial step for graphene to be utilized in RF applications. In the present study, we report high output resistances and voltage gains in graphene-on-silicon (GoS) FETs. This is achieved by utilizing bare silicon as a supporting substrate without an insulating layer under the graphene. The GoSFETs exhibit a maximum output resistance of 2.5 MΩ∙μm, maximum intrinsic voltage gain of 28 dB, and maximum voltage gain of 9 dB. This method opens a new route to overcome the limitations of conventional graphene-on-insulator (GoI) FETs and subsequently brings graphene electronics closer to practical usage. PMID:27142861

Noise-enhanced chaos in a weakly coupled GaAs/(Al,Ga)As superlattice.

PubMed

Yin, Zhizhen; Song, Helun; Zhang, Yaohui; Ruiz-García, Miguel; Carretero, Manuel; Bonilla, Luis L; Biermann, Klaus; Grahn, Holger T

2017-01-01

Noise-enhanced chaos in a doped, weakly coupled GaAs/Al_{0.45}Ga_{0.55}As superlattice has been observed at room temperature in experiments as well as in the results of the simulation of nonlinear transport based on a discrete tunneling model. When external noise is added, both the measured and simulated current-versus-time traces contain irregularly spaced spikes for particular applied voltages, which separate a regime of periodic current oscillations from a region of no current oscillations at all. In the voltage region without current oscillations, the electric-field profile consist of a low-field domain near the emitter contact separated by a domain wall consisting of a charge accumulation layer from a high-field regime closer to the collector contact. With increasing noise amplitude, spontaneous chaotic current oscillations appear over a wider bias voltage range. For these bias voltages, the domain boundary between the two electric-field domains becomes unstable and very small current or voltage fluctuations can trigger the domain boundary to move toward the collector and induce chaotic current spikes. The experimentally observed features are qualitatively very well reproduced by the simulations. Increased noise can consequently enhance chaotic current oscillations in semiconductor superlattices.

Noise-enhanced chaos in a weakly coupled GaAs/(Al,Ga)As superlattice

NASA Astrophysics Data System (ADS)

Yin, Zhizhen; Song, Helun; Zhang, Yaohui; Ruiz-García, Miguel; Carretero, Manuel; Bonilla, Luis L.; Biermann, Klaus; Grahn, Holger T.

2017-01-01

Noise-enhanced chaos in a doped, weakly coupled GaAs /Al0.45Ga0.55As superlattice has been observed at room temperature in experiments as well as in the results of the simulation of nonlinear transport based on a discrete tunneling model. When external noise is added, both the measured and simulated current-versus-time traces contain irregularly spaced spikes for particular applied voltages, which separate a regime of periodic current oscillations from a region of no current oscillations at all. In the voltage region without current oscillations, the electric-field profile consist of a low-field domain near the emitter contact separated by a domain wall consisting of a charge accumulation layer from a high-field regime closer to the collector contact. With increasing noise amplitude, spontaneous chaotic current oscillations appear over a wider bias voltage range. For these bias voltages, the domain boundary between the two electric-field domains becomes unstable and very small current or voltage fluctuations can trigger the domain boundary to move toward the collector and induce chaotic current spikes. The experimentally observed features are qualitatively very well reproduced by the simulations. Increased noise can consequently enhance chaotic current oscillations in semiconductor superlattices.

A weak electric field-assisted ultrafast electrical switching dynamics in In3SbTe2 phase-change memory devices

NASA Astrophysics Data System (ADS)

Pandey, Shivendra Kumar; Manivannan, Anbarasu

2017-07-01

Prefixing a weak electric field (incubation) might enhance the crystallization speed via pre-structural ordering and thereby achieving faster programming of phase change memory (PCM) devices. We employed a weak electric field, equivalent to a constant small voltage (that is incubation voltage, Vi of 0.3 V) to the applied voltage pulse, VA (main pulse) for a systematic understanding of voltage-dependent rapid threshold switching characteristics and crystallization (set) process of In3SbTe2 (IST) PCM devices. Our experimental results on incubation-assisted switching elucidate strikingly one order faster threshold switching, with an extremely small delay time, td of 300 ps, as compared with no incubation voltage (Vi = 0 V) for the same VA. Also, the voltage dependent characteristics of incubation-assisted switching dynamics confirm that the initiation of threshold switching occurs at a lower voltage of 0.82 times of VA. Furthermore, we demonstrate an incubation assisted ultrafast set process of IST device for a low VA of 1.7 V (˜18 % lesser compared to without incubation) within a short pulse-width of 1.5 ns (full width half maximum, FWHM). These findings of ultrafast switching, yet low power set process would immensely be helpful towards designing high speed PCM devices with low power operation.

Pb/InAs nanowire josephson junction with high critical current and magnetic flux focusing.

PubMed

Paajaste, J; Amado, M; Roddaro, S; Bergeret, F S; Ercolani, D; Sorba, L; Giazotto, F

2015-03-11

We have studied mesoscopic Josephson junctions formed by highly n-doped InAs nanowires and superconducting Ti/Pb source and drain leads. The current-voltage properties of the system are investigated by varying temperature and external out-of-plane magnetic field. Superconductivity in the Pb electrodes persists up to ∼7 K and with magnetic field values up to 0.4 T. Josephson coupling at zero backgate voltage is observed up to 4.5 K and the critical current is measured to be as high as 615 nA. The supercurrent suppression as a function of the magnetic field reveals a diffraction pattern that is explained by a strong magnetic flux focusing provided by the superconducting electrodes forming the junction.

Measuring Multi-Megavolt Diode Voltages

NASA Astrophysics Data System (ADS)

Pereira, N. R.; Swanekamp, S. B.; Weber, B. V.; Commisso, R. J.; Hinshelwood, D. D.; Stephanakis, S. J.

2002-12-01

The voltage in high-power diodes can be determined by measuring the Compton electrons generated by the diode's bremsstrahlung radiation. This technique is implemented with a Compton-Hall (C-H) voltmeter that collimates the bremsstrahlung onto a Compton target and bends the emitted Compton electron orbits off to the side with an applied magnetic field off to Si pin diode detectors. Voltage is determined from the ratio of the Compton electron dose to the forward x-ray dose. The instrument's calibration and response are determined from coupled electron/photon transport calculations. The applicable voltage range is tuned by adjusting the position of the electron detector relative to the Compton target or by varying the magnetic field strength. The instrument was used to obtain time-dependent voltage measurements for a pinched-beam diode whose voltage is enhanced by an upstream opening switch. In this case, plasmas and vacuum electron flow from the opening switch make it difficult to determine the voltage accurately from electrical measurements. The C-H voltmeter gives voltages that are significantly higher than those obtained from electrical measurements but are consistent with measurements of peak voltage based on nuclear activation of boron-nitride targets.

Voltage-Induced Nonlinear Conduction Properties of Epoxy Resin/Micron-Silver Particles Composites

NASA Astrophysics Data System (ADS)

Qu, Zhaoming; Lu, Pin; Yuan, Yang; Wang, Qingguo

2018-01-01

The nonlinear conduction properties of epoxy resin (ER)/micron-silver particles (MP) composites were investigated. Under sufficient high intensity applied constant voltage, the obvious nonlinear conduction properties of the samples with volume fraction 25% were found. With increments in the voltage, the conductive switching effect was observed. The nonlinear conduction mechanism of the ER/MP composites under high applied voltages could be attributed to the electrical current conducted via discrete paths of conductive particles induced by the electric field. The test results show that the ER/MP composites with nonlinear conduction properties are of great potential application in electromagnetic protection of electron devices and systems.

Origin of negative resistance in anion migration controlled resistive memory

NASA Astrophysics Data System (ADS)

Banerjee, Writam; Wu, Facai; Hu, Yuan; Wu, Quantan; Wu, Zuheng; Liu, Qi; Liu, Ming

2018-03-01

Resistive random access memory (RRAM) is one of the most promising emerging nonvolatile technologies for the futuristic memory devices. Resistive switching behavior often shows negative resistance (NR), either voltage controlled or current controlled. In this work, the origin of a current compliance dependent voltage controlled NR effect during the resetting of anion migration based RRAM devices is discussed. The N-type voltage controlled NR is a high field driven phenomena. The current conduction within the range of a certain negative voltage is mostly dominated by space charge limited current. But with the higher negative voltage, a field induced tunneling effect is generated in the NR region. The voltage controlled NR is strongly dependent on the compliance current. The area independent behavior indicates the filamentary switching. The peak to valley ratio (PVR) is > 5. The variation of PVR as a function of the conduction band offset is achieved. Compared to other reported works, based on the PVR, it is possible to distinguish the RRAM types. Generally, due to the higher electric field effect on the metallic bridge during RESET, the electrochemical metallization type RRAM shows much higher PVR than the valance change type RRAM.

Trap Healing for High-Performance Low-Voltage Polymer Transistors and Solution-Based Analog Amplifiers on Foil.

PubMed

Pecunia, Vincenzo; Nikolka, Mark; Sou, Antony; Nasrallah, Iyad; Amin, Atefeh Y; McCulloch, Iain; Sirringhaus, Henning

2017-06-01

Solution-processed semiconductors such as conjugated polymers have great potential in large-area electronics. While extremely appealing due to their low-temperature and high-throughput deposition methods, their integration in high-performance circuits has been difficult. An important remaining challenge is the achievement of low-voltage circuit operation. The present study focuses on state-of-the-art polymer thin-film transistors based on poly(indacenodithiophene-benzothiadiazole) and shows that the general paradigm for low-voltage operation via an enhanced gate-to-channel capacitive coupling is unable to deliver high-performance device behavior. The order-of-magnitude longitudinal-field reduction demanded by low-voltage operation plays a fundamental role, enabling bulk trapping and leading to compromised contact properties. A trap-reduction technique based on small molecule additives, however, is capable of overcoming this effect, allowing low-voltage high-mobility operation. This approach is readily applicable to low-voltage circuit integration, as this work exemplifies by demonstrating high-performance analog differential amplifiers operating at a battery-compatible power supply voltage of 5 V with power dissipation of 11 µW, and attaining a voltage gain above 60 dB at a power supply voltage below 8 V. These findings constitute an important milestone in realizing low-voltage polymer transistors for solution-based analog electronics that meets performance and power-dissipation requirements for a range of battery-powered smart-sensing applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Comparison of pulsed corona plasma and pulsed electric fields for the decontamination of water containing Legionella pneumophila as model organism.

PubMed

Banaschik, Robert; Burchhardt, Gerhard; Zocher, Katja; Hammerschmidt, Sven; Kolb, Juergen F; Weltmann, Klaus-Dieter

2016-12-01

Pulsed corona plasma and pulsed electric fields were assessed for their capacity to kill Legionella pneumophila in water. Electrical parameters such as in particular dissipated energy were equal for both treatments. This was accomplished by changing the polarity of the applied high voltage pulses in a coaxial electrode geometry resulting in the generation of corona plasma or an electric field. For corona plasma, generated by high voltage pulses with peak voltages of +80kV, Legionella were completely killed, corresponding to a log-reduction of 5.4 (CFU/ml) after a treatment time of 12.5min. For the application of pulsed electric fields from peak voltages of -80kV a survival of log 2.54 (CFU/ml) was still detectable after this treatment time. Scanning electron microscopy images of L. pneumophila showed rupture of cells after plasma treatment. In contrast, the morphology of bacteria seems to be intact after application of pulsed electric fields. The more efficient killing for the same energy input observed for pulsed corona plasma is likely due to induced chemical processes and the generation of reactive species as indicated by the evolution of hydrogen peroxide. This suggests that the higher efficacy and efficiency of pulsed corona plasma is primarily associated with the combined effect of the applied electric fields and the promoted reaction chemistry. Copyright © 2016 Elsevier B.V. All rights reserved.

High voltage electrical amplifier having a short rise time

DOEpatents

Christie, David J.; Dallum, Gregory E.

1991-01-01

A circuit, comprising an amplifier and a transformer is disclosed that produces a high power pulse having a fast response time, and that responds to a digital control signal applied through a digital-to-analog converter. The present invention is suitable for driving a component such as an electro-optic modulator with a voltage in the kilovolt range. The circuit is stable at high frequencies and during pulse transients, and its impedance matching circuit matches the load impedance with the output impedance. The preferred embodiment comprises an input stage compatible with high-speed semiconductor components for amplifying the voltage of the input control signal, a buffer for isolating the input stage from the output stage; and a plurality of current amplifiers connected to the buffer. Each current amplifier is connected to a field effect transistor (FET), which switches a high voltage power supply to a transformer which then provides an output terminal for driving a load. The transformer comprises a plurality of transmission lines connected to the FETs and the load. The transformer changes the impedance and voltage of the output. The preferred embodiment also comprises a low voltage power supply for biasing the FETs at or near an operational voltage.

High-performance, low-operating voltage, and solution-processable organic field-effect transistor with silk fibroin as the gate dielectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Leilei; Xu, Xinjun, E-mail: xuxj@mater.ustb.edu.cn, E-mail: lidong@mater.ustb.edu.cn; Ma, Mingchao

2014-01-13

We report the use of silk fibroin as the gate dielectric material in solution-processed organic field-effect transistors (OFETs) with poly(3-hexylthiophene) (P3HT) as the semiconducting layer. Such OFETs exhibit a low threshold of −0.77 V and a low-operating voltage (0 to −3 V) compatible with the voltage level commonly-used in current electronic industry. The carrier mobility of such OFETs is as high as 0.21 cm{sup 2} V{sup −1} s{sup −1} in the saturation regime, comparable to the best value of P3HT-based OFETs with dielectric layer that is not solution-processed. The high-performance of this kind of OFET is related with the high contentmore » of β strands in fibroin dielectric which leads to an array of fibers in a highly ordered structure, thus reducing the trapping sites at the semiconductor/dielectric interface.« less

Piezo Voltage Controlled Planar Hall Effect Devices

PubMed Central

Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K. W.; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

2016-01-01

The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials. PMID:27329068

Piezo Voltage Controlled Planar Hall Effect Devices.

PubMed

Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

2016-06-22

The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

The Studies of a Vacuum Gap Breakdown after High-Current Arc Interruption with Increasing the Voltage

NASA Astrophysics Data System (ADS)

Schneider, A. V.; Popov, S. A.; Batrakov, A. V.; Dubrovskaya, E. L.; Lavrinovich, V. A.

2017-12-01

Vacuum-gap breakdown has been studied after high-current arc interruption with a subsequent increase in the transient recovery voltage across a gap. The effects of factors, such as the rate of the rise in the transient voltage, the potential of the shield that surrounds a discharge gap, and the arc burning time, have been determined. It has been revealed that opening the contacts earlier leads to the formation of an anode spot, which is the source of electrode material vapors into the discharge gap after current zero moment. Under the conditions of increasing voltage, this fact results in the breakdown. Too late opening leads to the breakdown of a short gap due to the high electric fields.

Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators

PubMed

Dimitrakopoulos; Purushothaman; Kymissis; Callegari; Shaw

1999-02-05

The gate bias dependence of the field-effect mobility in pentacene-based insulated gate field-effect transistors (IGFETs) was interpreted on the basis of the interaction of charge carriers with localized trap levels in the band gap. This understanding was used to design and fabricate IGFETs with mobility of more than 0.3 square centimeter per volt per second and current modulation of 10(5), with the use of amorphous metal oxide gate insulators. These values were obtained at operating voltage ranges as low as 5 volts, which are much smaller than previously reported results. An all-room-temperature fabrication process sequence was used, which enabled the demonstration of high-performance organic IGFETs on transparent plastic substrates, at low operating voltages for organic devices.

[High voltage objects and radiocommunication investments in view of requirements of the environmental protection act].

PubMed

Szuba, Marek

2006-01-01

This paper presents the most important elements of the localization procedure of high voltage overhead lines and substations and radiocommunication objects which are the source of electromagnetic fields. These fields are perceived as a major threat to human health. The point of departure to make a choice of investments is the special classification of technical installations described in one of the executive directive issued by virtue of the Environmental Protection Act. This special executive directive enumerates a lot of technical objects (installation), classified in the group of investments which have significant impact on the environment and some objects which could be classified in this group. For all this technical installations (e.g., overhead high voltage power lines) the provisions of the Environmental Protection Act impose an obligation to take particular steps to assure transparency of the environmental protection procedures, transborder procedures and the protection of areas included in the Natura 2000 network.

Electro-optic voltage sensor for sensing voltage in an E-field

DOEpatents

Davidson, James R.; Crawford, Thomas M.; Seifert, Gary D.

2002-03-26

A miniature electro-optic voltage sensor and system capable of accurate operation at high voltages has a sensor body disposed in an E-field. The body receives a source beam of electromagnetic radiation. A polarization beam displacer separates the source light beam into two beams with orthogonal linear polarizations. A wave plate rotates the linear polarization to rotated polarization. A transducer utilizes Pockels electro-optic effect and induces a differential phase shift on the major and minor axes of the rotated polarization in response to the E-field. A prism redirects the beam back through the transducer, wave plate, and polarization beam displacer. The prism also converts the rotated polarization to circular or elliptical polarization. The wave plate rotates the major and minor axes of the circular or elliptical polarization to linear polarization. The polarization beam displacer separates the beam into two beams of orthogonal linear polarization representing the major and minor axes. The system may have a transmitter for producing the beam of electro-magnetic radiation; a detector for converting the two beams into electrical signals; and a signal processor for determining the voltage.

Decomposition of Composite Electric Field in a Three-Phase D-Dot Voltage Transducer Measuring System

PubMed Central

Hu, Xueqi; Wang, Jingang; Wei, Gang; Deng, Xudong

2016-01-01

In line with the wider application of non-contact voltage transducers in the engineering field, transducers are required to have better performance for different measuring environments. In the present study, the D-dot voltage transducer is further improved based on previous research in order to meet the requirements for long-distance measurement of electric transmission lines. When measuring three-phase electric transmission lines, problems such as synchronous data collection and composite electric field need to be resolved. A decomposition method is proposed with respect to the superimposed electric field generated between neighboring phases. The charge simulation method is utilized to deduce the decomposition equation of the composite electric field and the validity of the proposed method is verified by simulation calculation software. With the deduced equation as the algorithm foundation, this paper improves hardware circuits, establishes a measuring system and constructs an experimental platform for examination. Under experimental conditions, a 10 kV electric transmission line was tested for steady-state errors, and the measuring results of the transducer and the high-voltage detection head were compared. Ansoft Maxwell Stimulation Software was adopted to obtain the electric field intensity in different positions under transmission lines; its values and the measuring values of the transducer were also compared. Experimental results show that the three-phase transducer is characterized by a relatively good synchronization for data measurement, measuring results with high precision, and an error ratio within a prescribed limit. Therefore, the proposed three-phase transducer can be broadly applied and popularized in the engineering field. PMID:27754340

Field-effect transistors as electrically controllable nonlinear rectifiers for the characterization of terahertz pulses

NASA Astrophysics Data System (ADS)

Lisauskas, Alvydas; Ikamas, Kestutis; Massabeau, Sylvain; Bauer, Maris; ČibiraitÄ--, DovilÄ--; Matukas, Jonas; Mangeney, Juliette; Mittendorff, Martin; Winnerl, Stephan; Krozer, Viktor; Roskos, Hartmut G.

2018-05-01

We propose to exploit rectification in field-effect transistors as an electrically controllable higher-order nonlinear phenomenon for the convenient monitoring of the temporal characteristics of THz pulses, for example, by autocorrelation measurements. This option arises because of the existence of a gate-bias-controlled super-linear response at sub-threshold operation conditions when the devices are subjected to THz radiation. We present measurements for different antenna-coupled transistor-based THz detectors (TeraFETs) employing (i) AlGaN/GaN high-electron-mobility and (ii) silicon CMOS field-effect transistors and show that the super-linear behavior in the sub-threshold bias regime is a universal phenomenon to be expected if the amplitude of the high-frequency voltage oscillations exceeds the thermal voltage. The effect is also employed as a tool for the direct determination of the speed of the intrinsic TeraFET response which allows us to avoid limitations set by the read-out circuitry. In particular, we show that the build-up time of the intrinsic rectification signal of a patch-antenna-coupled CMOS detector changes from 20 ps in the deep sub-threshold voltage regime to below 12 ps in the vicinity of the threshold voltage.

Design of an Auto-zeroed, Differential, Organic Thin-film Field-effect Transistor Amplifier for Sensor Applications

NASA Technical Reports Server (NTRS)

Binkley, David M.; Verma, Nikhil; Crawford, Robert L.; Brandon, Erik; Jackson, Thomas N.

2004-01-01

Organic strain gauge and other sensors require high-gain, precision dc amplification to process their low-level output signals. Ideally, amplifiers would be fabricated using organic thin-film field-effect transistors (OTFT's) adjacent to the sensors. However, OTFT amplifiers exhibit low gain and high input-referred dc offsets that must be effectively managed. This paper presents a four-stage, cascaded differential OTFT amplifier utilizing switched capacitor auto-zeroing. Each stage provides a nominal voltage gain of four through a differential pair driving low-impedance active loads, which provide common-mode output voltage control. p-type pentacence OTFT's are used for the amplifier devices and auto-zero switches. Simulations indicate the amplifier provides a nominal voltage gain of 280 V/V and effectively amplifies a 1-mV dc signal in the presence of 500-mV amplifier input-referred dc offset voltages. Future work could include the addition of digital gain calibration and offset correction of residual offsets associated with charge injection imbalance in the differential circuits.

Kinetics of charged particles in a high-voltage gas discharge in a nonuniform electrostatic field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kolpakov, V. A., E-mail: kolpakov683@gmail.com; Krichevskii, S. V.; Markushin, M. A.

A high-voltage gas discharge is of interest as a possible means of generating directed flows of low-temperature plasma in the off-electrode space distinguished by its original features [1–4]. We propose a model for calculating the trajectories of charges particles in a high-voltage gas discharge in nitrogen at a pressure of 0.15 Torr existing in a nonuniform electrostatic field and the strength of this field. Based on the results of our calculations, we supplement and refine the extensive experimental data concerning the investigation of such a discharge published in [1, 2, 5–8]; good agreement between the theory and experiment has beenmore » achieved. The discharge burning is initiated and maintained through bulk electron-impact ionization and ion–electron emission. We have determined the sizes of the cathode surface regions responsible for these processes, including the sizes of the axial zone involved in the discharge generation. The main effect determining the kinetics of charged particles consists in a sharp decrease in the strength of the field under consideration outside the interelectrode space, which allows a free motion of charges with specific energies and trajectories to be generated in it. The simulation results confirm that complex electrode systems that allow directed plasma flows to be generated at a discharge current of hundreds or thousands of milliamperes and a voltage on the electrodes of 0.3–1 kV can be implemented in practice [3, 9, 10].« less

High sensitivity field asymmetric ion mobility spectrometer

NASA Astrophysics Data System (ADS)

Chavarria, Mario A.; Matheoud, Alessandro V.; Marmillod, Philippe; Liu, Youjiang; Kong, Deyi; Brugger, Jürgen; Boero, Giovanni

2017-03-01

A high sensitivity field asymmetric ion mobility spectrometer (FAIMS) was designed, fabricated, and tested. The main components of the system are a 10.6 eV UV photoionization source, an ion filter driven by a high voltage/high frequency n-MOS inverter circuit, and a low noise ion detector. The ion filter electronics are capable to generate square waveforms with peak-to-peak voltages up to 1000 V at frequencies up to 1 MHz with adjustable duty cycles. The ion detector current amplifier has a gain up to 1012 V/A with an effective equivalent input noise level down to about 1 fA/Hz1/2 during operation with the ion filter at the maximum voltage and frequency. The FAIMS system was characterized by detecting different standard chemical compounds. Additionally, we investigated the use of a synchronous modulation/demodulation technique to improve the signal-to-noise ratio in FAIMS measurements. In particular, we implemented the modulation of the compensation voltage with the synchronous demodulation of the ion current. The analysis of the measurements at low concentration levels led to an extrapolated limit of detection for acetone of 10 ppt with an averaging time of 1 s.

Magnetic lens apparatus for a low-voltage high-resolution electron microscope

DOEpatents

Crewe, Albert V.

1996-01-01

A lens apparatus in which a beam of charged particles of low accelerating voltage is brought to a focus by a magnetic field, the lens being situated behind the target position. The lens comprises an electrically-conducting coil arranged around the axis of the beam and a magnetic pole piece extending along the axis of the beam at least within the space surrounded by the coil. The lens apparatus comprises the sole focusing lens for high-resolution imaging in a low-voltage scanning electron microscope.

Low-high junction theory applied to solar cells

NASA Technical Reports Server (NTRS)

Godlewski, M. P.; Baraona, C. R.; Brandhorst, H. W., Jr.

1974-01-01

Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open-circuit voltage and improved radiation resistance. Several analytical models for open-circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero surface recombination velocity (SRV) case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells.

Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors.

PubMed

Li, Hua-Min; Lee, Dae-Yeong; Choi, Min Sup; Qu, Deshun; Liu, Xiaochi; Ra, Chang-Ho; Yoo, Won Jong

2014-02-10

A gate-controlled metal-semiconductor barrier modulation and its effect on carrier transport were investigated in two-dimensional (2D) transition metal dichalcogenide (TMDC) field effect transistors (FETs). A strong photoresponse was observed in both unipolar MoS2 and ambipolar WSe2 FETs (i) at the high drain voltage due to a high electric field along the channel for separating photo-excited charge carriers and (ii) at the certain gate voltage due to the optimized barriers for the collection of photo-excited charge carriers at metal contacts. The effective barrier height between Ti/Au and TMDCs was estimated by a low temperature measurement. An ohmic contact behavior and drain-induced barrier lowering (DIBL) were clearly observed in MoS2 FET. In contrast, a Schottky-to-ohmic contact transition was observed in WSe2 FET as the gate voltage increases, due to the change of majority carrier transport from holes to electrons. The gate-dependent barrier modulation effectively controls the carrier transport, demonstrating its great potential in 2D TMDCs for electronic and optoelectronic applications.

Study on high breakdown voltage GaN-based vertical field effect transistor with interfacial charge engineering for power applications

NASA Astrophysics Data System (ADS)

Du, Jiangfeng; Liu, Dong; Liu, Yong; Bai, Zhiyuan; Jiang, Zhiguang; Liu, Yang; Yu, Qi

2017-11-01

A high voltage GaN-based vertical field effect transistor with interfacial charge engineering (GaN ICE-VFET) is proposed and its breakdown mechanism is presented. This vertical FET features oxide trenches which show a fixed negative charge at the oxide/GaN interface. In the off-state, firstly, the trench oxide layer acts as a field plate; secondly, the n-GaN buffer layer is inverted along the oxide/GaN interface and thus a vertical hole layer is formed, which acts as a virtual p-pillar and laterally depletes the n-buffer pillar. Both of them modulate electric field distribution in the device and significantly increase the breakdown voltage (BV). Compared with a conventional GaN vertical FET, the BV of GaN ICE-VFET is increased from 1148 V to 4153 V with the same buffer thickness of 20 μm. Furthermore, the proposed device achieves a great improvement in the tradeoff between BV and on-resistance; and its figure of merit even exceeds the GaN one-dimensional limit.

Ion trap device

DOEpatents

Ibrahim, Yehia M.; Smith, Richard D.

2016-01-26

An ion trap device is disclosed. The device includes a series of electrodes that define an ion flow path. A radio frequency (RF) field is applied to the series of electrodes such that each electrode is phase shifted approximately 180 degrees from an adjacent electrode. A DC voltage is superimposed with the RF field to create a DC gradient to drive ions in the direction of the gradient. A second RF field or DC voltage is applied to selectively trap and release the ions from the device. Further, the device may be gridless and utilized at high pressure.

First test of a high voltage feedthrough for liquid Argon TPCs connected to a 300 kV power supply

NASA Astrophysics Data System (ADS)

Cantini, C.; Gendotti, A.; Molina Bueno, L.; Murphy, S.; Radics, B.; Regenfus, C.; Rigaut, Y.-A.; Rubbia, A.; Sergiampietri, F.; Viant, T.; Wu, S.

2017-03-01

Voltages above a hundred kilo-volt will be required to generate the drift field of future very large liquid Argon Time Projection Chambers. One of the most delicate component is the feedthrough whose role is to safely deliver the very high voltage to the cathode through the thick insulating walls of the cryostat without compromising the purity of the argon inside. This requires a feedthrough that is typically meters long and carefully designed to be vacuum tight and have small heat input. Furthermore, all materials should be carefully chosen to allow operation in cryogenic conditions. In addition, electric fields in liquid argon should be kept below a threshold to reduce risks of discharges. The combination of all above requirements represents significant challenges from the design and manufacturing perspective. In this paper, we report on the successful operation of a feedthrough satisfying all the above requirements. The details of the feedthrough design and its manufacturing steps are provided. Very high voltages up to unprecedented voltages of -300 kV could be applied during long periods repeatedly. A source of instability was observed, which was specific to the setup configuration which was used for the test and not due to the feedthrough itself.

Optical probing of electric fields with an electro-acoustic effect toward integrated circuit diagnosis.

PubMed

Jin, Ru-Long; Yang, Han; Zhao, Di; Chen, Qi-Dai; Yan, Zhao-Xu; Yi, Mao-Bin; Sun, Hong-Bo

2010-02-15

Electro-optic probing of electric fields has been considered as a promising approach for integrated circuit diagnosis. However, the method is subject to relatively weak voltage sensitivity. In this Letter, we solve the problems with electro-acoustic effect. In contrast to the general electro-optic effect, the light phase modulation induced by the acoustic effect is 2 orders of magnitude stronger at its resonant frequency, as we observed in a GaAs thin film probe. Furthermore, this what we believe to be a novel method shows a highly reproducible linearity between the detected signals and the input voltages, which facilitates the voltage calibration.

Piezoelectric transformers for low-voltage generation of gas discharges and ionic winds in atmospheric air

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Michael J.; Go, David B., E-mail: dgo@nd.edu; Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556

To generate a gas discharge (plasma) in atmospheric air requires an electric field that exceeds the breakdown threshold of ∼30 kV/cm. Because of safety, size, or cost constraints, the large applied voltages required to generate such fields are often prohibitive for portable applications. In this work, piezoelectric transformers are used to amplify a low input applied voltage (<30 V) to generate breakdown in air without the need for conventional high-voltage electrical equipment. Piezoelectric transformers (PTs) use their inherent electromechanical resonance to produce a voltage amplification, such that the surface of the piezoelectric exhibits a large surface voltage that can generate corona-like dischargesmore » on its corners or on adjacent electrodes. In the proper configuration, these discharges can be used to generate a bulk air flow called an ionic wind. In this work, PT-driven discharges are characterized by measuring the discharge current and the velocity of the induced ionic wind with ionic winds generated using input voltages as low as 7 V. The characteristics of the discharge change as the input voltage increases; this modifies the resonance of the system and subsequent required operating parameters.« less

Effects of detuning of electron beam quality for annular beam Cyclotron Autoresonance Accelerator (CARA)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, C.; Hirshfield, J.L.; Ganguly, K.

1995-04-01

For high frequency gyrotrons or high gyroharmonic conversion, an axis encircling beam of high voltage is required to allow coupling to whispering gallery fields near the walls. Lower voltage is required for an annular beam of similar velocity ratio {alpha}. Here the authors present simulation results using a modified CARA for preparation of a 320 kV, 20 A, {alpha} = 1.5 annular beam driven at 11.424 GHz with an rf power of 5 MW and an injection voltage of 75 kV. It is shown that the beam quality can be considerably improved by so-called {open_quotes}detuning{close_quotes}, where the tapered axial magneticmore » field profiles in the CARA are caused to deviate a small amount from exact resonance. Under typical operating conditions, beams with axial velocity spreads of the order of 1% are predicted. This approach could be used to provide a high quality annular gyrating beam for multi-megawatt millimeter wave sources in the 100-200 GHz range.« less

Electric-Field Instrument With Ac-Biased Corona Point

NASA Technical Reports Server (NTRS)

Markson, R.; Anderson, B.; Govaert, J.

1993-01-01

Measurements indicative of incipient lightning yield additional information. New instrument gives reliable readings. High-voltage ac bias applied to needle point through high-resistance capacitance network provides corona discharge at all times, enabling more-slowly-varying component of electrostatic potential of needle to come to equilibrium with surrounding air. High resistance of high-voltage coupling makes instrument insensitive to wind. Improved corona-point instrument expected to yield additional information assisting in safety-oriented forecasting of lighting.

Absolute Determination of High DC Voltages by Means of Frequency Measurement

NASA Astrophysics Data System (ADS)

Peier, Dirk; Schulz, Bernd

1983-01-01

A novel absolute measuring procedure is presented for the definition of fixed points of the voltage in the 100 kV range. The method is based on transit time measurements with accelerated electrons. By utilizing the selective interaction of a monoenergetic electron beam with the electromagnetic field of a special cavity resonator, the voltage is referred to fundamental constants and the base unit second. Possible balance voltages are indicated by a current detector. Experimental investigations are carried out with resonators in the normal conducting range. With a copper resonator operating at the temperature of boiling nitrogen (77 K), the relative uncertainty of the voltage points is estimated to be +/- 4 × 10-4. The technically realizable uncertainty can be reduced to +/- 1 × 10-5 by the proposed application of a superconducting niobium resonator. Thus this measuring device becomes suitable as a primary standard for the high-voltage range.

Effect of Al-diffusion-induced positive flatband voltage shift on the electrical characteristics of Al-incorporated high-k metal-oxide-semiconductor field-effective transistor

NASA Astrophysics Data System (ADS)

Wang, Wenwu; Akiyama, Koji; Mizubayashi, Wataru; Nabatame, Toshihide; Ota, Hiroyuki; Toriumi, Akira

2009-03-01

We systematically studied what effect Al diffusion from high-k dielectrics had on the flatband voltage (Vfb) of Al-incorporated high-k gate stacks. An anomalous positive shift fin Vfb with the decreasing equivalent oxide thickness (EOT) of high-k gate stacks is reported. As the SiO2 interfacial layer is aggressively thinned in Al-incorporated HfxAl1-xOy gate stacks with a metal-gate electrode, the Vfb first lies on the well known linear Vfb-EOT plot and deviates toward the positive-voltage direction (Vfb roll-up), followed by shifting toward negative voltage (Vfb roll-off). We demonstrated that the Vfb roll-up behavior remarkably decreases the threshold voltage (Vth) of p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs), and does not cause severe degradation in the characteristics of hole mobility. The Vfb roll-up behavior, which is independent of gate materials but strongly dependent on high-k dielectrics, was ascribed to variations in fixed charges near the SiO2/Si interface, which are caused by Al diffusion from HfxAl1-xOy through SiO2 to the SiO2/Si interface. These results indicate that anomalous positive shift in Vfb, i.e., Vfb roll-up, should be taken into consideration in quantitatively adjusting Vfb in thin EOT regions and that it could be used to further tune Vth in p-MOSFETs.

DC partial discharge/environmental test screening of space TWTS

NASA Astrophysics Data System (ADS)

Hai, F.; Paschen, K. W.

Direct-current partial discharge/environmental tests are being conducted on traveling wave tubes (TWTs) designated for long-term space operation to screen out tubes with high voltage defects. Two types of TWTs with different external high-voltage insulation are being examined: (1) TWTs with polymeric potting, and (2) TWTs with ceramic feedthroughs. Detection of high voltage defects in the form of cracks and seprations in potted systems is enhanced by combining dc partial discharge testing with environmental (temperature and pressure) testing. These defects are usually caused by high stresses in the potting produced during temperature excursions by the difference in thermal expansion between the potting material and the confining ceramic-metal structure. Tests of all-ceramic-insulated TWTs indicate that the high voltage problem is internal to the vacuum envelope and requires both leakage and discharge measurements for diagnosis. This problem appears to be field emission from contaminated surfaces.

Increasing The Electric Field For An Improved Search For Time-Reversal Violation Using Radium-225

NASA Astrophysics Data System (ADS)

Powers, Adam

2017-09-01

Radium-225 atoms, because of their unusual pear-shaped nuclei, have an enhanced sensitivity to the violation of time reversal symmetry. A breakdown of this fundamental symmetry could help explain the apparent scarcity of antimatter in the Universe. Our goal is to improve the statistical sensitivity of an ongoing experiment that precisely measures the EDM of Radium-225. This can be done by increasing the electric field acting on the Radium atoms. We do this by increasing the voltage that can be reliably applied between two electrodes, and narrowing the gap between them. We use a varying high voltage system to condition the electrodes using incremental voltage ramp tests to achieve higher voltage potential differences. Using an adjustable gap mount to change the distance between the electrodes, specific metals for their composition, and a clean room procedure to keep particulates out of the system, we produce a higher and more stable electric field. Progress is marked by measurements of the leakage current between the electrodes during our incremental voltage ramp tests or emulated tests of the actual experiment, with low and constant current showing stability of the field. This project is supported by Michigan State University, and the US DOE, Office of Science, Office of Nuclear Physics, under Contract DE-AC02-06CH11357.

Oxygen Displacement in Cuprates under Ionic Liquid Field-Effect Gating

PubMed Central

Dubuis, Guy; Yacoby, Yizhak; Zhou, Hua; He, Xi; Bollinger, Anthony T.; Pavuna, Davor; Pindak, Ron; Božović, Ivan

2016-01-01

We studied structural changes in a 5 unit cell thick La1.96Sr0.04CuO4 film, epitaxially grown on a LaSrAlO4 substrate with a single unit cell buffer layer, when ultra-high electric fields were induced in the film by applying a gate voltage between the film (ground) and an ionic liquid in contact with it. Measuring the diffraction intensity along the substrate-defined Bragg rods and analyzing the results using a phase retrieval method we obtained the three-dimensional electron density in the film, buffer layer, and topmost atomic layers of the substrate under different applied gate voltages. The main structural observations were: (i) there were no structural changes when the voltage was negative, holes were injected into the film making it more metallic and screening the electric field; (ii) when the voltage was positive, the film was depleted of holes becoming more insulating, the electric field extended throughout the film, the partial surface monolayer became disordered, and equatorial oxygen atoms were displaced towards the surface; (iii) the changes in surface disorder and the oxygen displacements were both reversed when a negative voltage was applied; and (iv) the c-axis lattice constant of the film did not change in spite of the displacement of equatorial oxygen atoms. PMID:27578237

Hot-Electron-Induced Device Degradation during Gate-Induced Drain Leakage Stress

NASA Astrophysics Data System (ADS)

Kim, Kwang-Soo; Han, Chang-Hoon; Lee, Jun-Ki; Kim, Dong-Soo; Kim, Hyong-Joon; Shin, Joong-Shik; Lee, Hea-Beoum; Choi, Byoung-Deog

2012-11-01

We studied the interface state generation and electron trapping by hot electrons under gate-induced drain leakage (GIDL) stress in p-type metal oxide semiconductor field-effect transistors (P-MOSFETs), which are used as the high-voltage core circuit of flash memory devices. When negative voltage was applied to a drain in the off-state, a GIDL current was generated, but when high voltage was applied to the drain, electrons had a high energy. The hot electrons produced the interface state and electron trapping. As a result, the threshold voltage shifted and the off-state leakage current (trap-assisted drain junction leakage current) increased. On the other hand, electron trapping mitigated the energy band bending near the drain and thus suppressed the GIDL current generation.

Mobility overestimation due to gated contacts in organic field-effect transistors

PubMed Central

Bittle, Emily G.; Basham, James I.; Jackson, Thomas N.; Jurchescu, Oana D.; Gundlach, David J.

2016-01-01

Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current–voltage characteristics and interpreted by using the classical metal oxide–semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm2 V−1 s−1), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current–voltage characterization are overestimated by one order of magnitude or more. PMID:26961271

Fiber-coupled LED gas sensor and its application to online monitoring of ecoefficient dielectric insulation gases in high-voltage circuit breakers.

PubMed

Kramer, Axel; Over, Daniel; Stoller, Patrick; Paul, Thomas A

2017-05-20

Novel dielectric insulation gases used as alternatives to sulfur hexafluoride in gas-insulated switchgear (GIS) include several mixtures containing fluorinated organic compounds. We developed a fiber-optic analyzer enabling concentration measurement of fluoroketones used in medium- and high-voltage switchgear applications by ABB, with concurrent compensation of disturbing effects caused by dust and dirt. The sensor enables measurements in GIS and even in operating high-voltage circuit breakers. The online availability of concentration readings of fluoroketones is important for development tests, but can also be applied for monitoring or diagnostics of field installations.

Electro-optic high voltage sensor

DOEpatents

Davidson, James R.; Seifert, Gary D.

2002-01-01

A small sized electro-optic voltage sensor capable of accurate measurement of high levels of voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation into the sensor. A polarization beam displacer serves as a filter to separate the input beam into two beams with orthogonal linear polarizations. The beam displacer is oriented in such a way as to rotate the linearly polarized beams such that they enter a Pockels crystal having at a preferred angle of 45 degrees. The beam displacer is therefore capable of causing a linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels electro-optic effect induces a differential phase shift on the major and minor axes of the input beam as it travels through the Pockels crystal, which causes the input beam to be elliptically polarized. A reflecting prism redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization representing the major and minor axes. The system may include a detector for converting the output beams into electrical signals, and a signal processor for determining the voltage based on an analysis of the output beams. The output beams are amplitude modulated by the frequency of the electric field and the amplitude of the output beams is proportional to the magnitude of the electric field, which is related to the voltage being measured.

The experimental study of the DC dielectric breakdown strength in magnetic fluids

NASA Astrophysics Data System (ADS)

Kopčanský, P.; Tomčo, L.; Marton, K.; Koneracká, M.; Potočová, I.; Timko, M.

2004-05-01

Magnetic fluids have been studied for use as a high-voltage insulation. High-voltage measurements on magnetic fluids based on transformer oil, as a function of volume concentrations of magnetite particles and applied magnetic field, showed the increase of the DC dielectric breakdown strength opposite transformer oil, if the saturation magnetization of magnetic fluid is up to 4 mT approximately.

High performance n-channel thin-film transistors with an amorphous phase C60 film on plastic substrate

NASA Astrophysics Data System (ADS)

Na, Jong H.; Kitamura, M.; Arakawa, Y.

2007-11-01

We fabricated high mobility, low voltage n-channel transistors on plastic substrates by combining an amorphous phase C60 film and a high dielectric constant gate insulator titanium silicon oxide (TiSiO2). The transistors exhibited high performance with a threshold voltage of 1.13V, an inverse subthreshold swing of 252mV/decade, and a field-effect mobility up to 1cm2/Vs at an operating voltage as low as 5V. The amorphous phase C60 films can be formed at room temperature, implying that this transistor is suitable for corresponding n-channel transistors in flexible organic logic devices.

Characteristics of corona impulses from insulated wires subjected to high ac voltages

NASA Technical Reports Server (NTRS)

Doreswamy, C. V.; Crowell, C. S.

1976-01-01

Corona discharges arise due to ionization of air or gas subject to high electric fields. The free electrons and ions contained in these discharges interact with molecules of insulating materials, resulting in chemical changes and destroying the electrical insulating properties. The paper describes some results of measurements aimed at determining corona pulse waveforms, their repetition rate, and amplitude distribution during various randomly-sampled identical time periods of a 60-Hz high-voltage wave. Described are properties of positive and negative corona impulses generated from typical conductors at various test high voltages. A possible method for calculating the energies, densities, and electromagnetic interferences by making use of these results is suggested.

Measurement and potential barrier evolution analysis of cold field emission in fracture fabricated Si nanogap

NASA Astrophysics Data System (ADS)

Banerjee, Amit; Hirai, Yoshikazu; Tsuchiya, Toshiyuki; Tabata, Osamu

2017-06-01

Cold field emission characteristics of a fracture fabricated Si nanogap (˜100 nm) were investigated with an ascending electric field (voltage) sweep. The nanogap was formed by controlled fracture of a free-standing silicon micro-beam along <111> direction by a microelectromechanical device, which results in flat, smooth, and conformal electrode pairs. This facilitates simultaneous large area emission, which gives rise to a significant current at low bias voltage, which usually remains indiscernible in nanogaps of this size. The measured emission current-voltage (I-V) characteristics clearly depict two distinct regimes: a linear (I ∝ V) regime at low bias voltage and a nonlinear [ln(I/V 2) ∝ V -1] regime at high bias voltage, separated by a transition point. We propose that the linear regime is owed to direct tunneling of electrons, whereas the nonlinear regime is due to Fowler-Nordheim type emission. This proposition essentially implies that the tunneling potential barrier gradually evolved from a rectangular shape to a triangular shape with increasing field (V). This type of evolution is usually observed in molecular size gaps. We have attempted to correlate the I-V curves acquired through the experiments with the electric field induced barrier shape evolution by numerical calculations involving standard quantum mechanics. The observed linear regime at low bias voltage (<5 V) in a relatively large size gap (˜100 nm) is attributed to the fabrication method adopted in this study. The reported study and the fabricated device are significant for developing a futuristic thermotunneling refrigerator that will find a wide range of application in nanoelectronic devices.

Effects of 60-Heartz electric and magnetic fields on implanted cardiac pacemakers. Final report. [Hazards of power transmission line frequencies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bridges, J.E.; Frazier, M.J.

1979-09-01

The effects of 60-Hz electric and magnetic fields of exta-high voltage (EHV) transmission lines on the performance of implanted cardiac pacemakers were studied by: (1) in vitro bench tests of a total of thirteen cardiac pacemakers; (2) in vivo tests of six implanted cardiac pacemakers in baboons; and (3) non-hazardous skin measurement tests on four humans. Analytical methods were developed to predict the thresholds of body current and electric fields capable of affecting normal pacemaker operation in humans. The field strengths calculated to alter implanted pacemaker performance were compared with the range of maximum electric and magnetic field strengths amore » human would normally encounter under transmission lines of various voltages. Results indicate that the electric field or body current necessary to alter the normal operation of pacemakers is highly dependent on the type of pacemaker and the location of the implanted electrodes. However, cardiologists have not so far detected harmful effects of pacemaker reversion to the asynchronous mode in current types of pacemakers and with present methods of implantation. Such interferences can be eliminated by using advanced pacemakers less sensitive to 60-Hz voltages or by using implantation lead arrangements less sensitive to body current.« less

Capacitance-voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer

NASA Astrophysics Data System (ADS)

Ko, Seung-Pil; Shin, Jong Mok; Jang, Ho Kyun; You, Min Youl; Jin, Jun-Eon; Choi, Miri; Cho, Jiung; Kim, Gyu-Tae

2018-02-01

Doping effects in devices based on two-dimensional (2D) materials have been widely studied. However, detailed analysis and the mechanism of the doping effect caused by encapsulation layers has not been sufficiently explored. In this work, we present experimental studies on the n-doping effect in WSe2 field effect transistors (FETs) with a high-k encapsulation layer (Al2O3) grown by atomic layer deposition. In addition, we demonstrate the mechanism and origin of the doping effect. After encapsulation of the Al2O3 layer, the threshold voltage of the WSe2 FET negatively shifted with the increase of the on-current. The capacitance-voltage measurements of the metal insulator semiconductor (MIS) structure proved the presence of the positive fixed charges within the Al2O3 layer. The flat-band voltage of the MIS structure of Au/Al2O3/SiO2/Si was shifted toward the negative direction on account of the positive fixed charges in the Al2O3 layer. Our results clearly revealed that the fixed charges in the Al2O3 encapsulation layer modulated the Fermi energy level via the field effect. Moreover, these results possibly provide fundamental ideas and guidelines to design 2D materials FETs with high-performance and reliability.

High voltage performance of a dc photoemission electron gun with centrifugal barrel-polished electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hernandez-Garcia, C.; Bullard, D.; Hannon, F.

The design and fabrication of electrodes for direct current (dc) high voltage photoemission electron guns can significantly influence their performance, most notably in terms of maximum achievable bias voltage. Proper electrostatic design of the triple-point junction shield electrode minimizes the risk of electrical breakdown (arcing) along the insulator-cable plug interface, while the electrode shape is designed to maintain <10 MV/m at the desired operating voltage aiming at little or no field emission once conditioned. Typical electrode surface preparation involves diamond-paste polishing by skilled personnel, requiring several weeks of effort per electrode. In this work, we describe a centrifugal barrel-polishing techniquemore » commonly used for polishing the interior surface of superconducting radio frequency cavities but implemented here for the first time to polish electrodes for dc high voltage photoguns. The technique reduced polishing time from weeks to hours while providing surface roughness comparable to that obtained with diamond-paste polishing and with unprecedented consistency between different electrode samples. We present electrode design considerations and high voltage conditioning results to 360 kV (~11 MV/m), comparing barrel-polished electrode performance to that of diamond-paste polished electrodes. Here, tests were performed using a dc high voltage photogun with an inverted-geometry ceramic insulator design.« less

High voltage performance of a dc photoemission electron gun with centrifugal barrel-polished electrodes

DOE PAGES

Hernandez-Garcia, C.; Bullard, D.; Hannon, F.; ...

2017-09-11

The design and fabrication of electrodes for direct current (dc) high voltage photoemission electron guns can significantly influence their performance, most notably in terms of maximum achievable bias voltage. Proper electrostatic design of the triple-point junction shield electrode minimizes the risk of electrical breakdown (arcing) along the insulator-cable plug interface, while the electrode shape is designed to maintain <10 MV/m at the desired operating voltage aiming at little or no field emission once conditioned. Typical electrode surface preparation involves diamond-paste polishing by skilled personnel, requiring several weeks of effort per electrode. In this work, we describe a centrifugal barrel-polishing techniquemore » commonly used for polishing the interior surface of superconducting radio frequency cavities but implemented here for the first time to polish electrodes for dc high voltage photoguns. The technique reduced polishing time from weeks to hours while providing surface roughness comparable to that obtained with diamond-paste polishing and with unprecedented consistency between different electrode samples. We present electrode design considerations and high voltage conditioning results to 360 kV (~11 MV/m), comparing barrel-polished electrode performance to that of diamond-paste polished electrodes. Here, tests were performed using a dc high voltage photogun with an inverted-geometry ceramic insulator design.« less

High voltage performance of a dc photoemission electron gun with centrifugal barrel-polished electrodes

NASA Astrophysics Data System (ADS)

Hernandez-Garcia, C.; Bullard, D.; Hannon, F.; Wang, Y.; Poelker, M.

2017-09-01

The design and fabrication of electrodes for direct current (dc) high voltage photoemission electron guns can significantly influence their performance, most notably in terms of maximum achievable bias voltage. Proper electrostatic design of the triple-point junction shield electrode minimizes the risk of electrical breakdown (arcing) along the insulator-cable plug interface, while the electrode shape is designed to maintain <10 MV/m at the desired operating voltage aiming at little or no field emission once conditioned. Typical electrode surface preparation involves diamond-paste polishing by skilled personnel, requiring several weeks of effort per electrode. In this work, we describe a centrifugal barrel-polishing technique commonly used for polishing the interior surface of superconducting radio frequency cavities but implemented here for the first time to polish electrodes for dc high voltage photoguns. The technique reduced polishing time from weeks to hours while providing surface roughness comparable to that obtained with diamond-paste polishing and with unprecedented consistency between different electrode samples. We present electrode design considerations and high voltage conditioning results to 360 kV (˜11 MV/m), comparing barrel-polished electrode performance to that of diamond-paste polished electrodes. Tests were performed using a dc high voltage photogun with an inverted-geometry ceramic insulator design.

SU-E-T-414: Experimental Correction of High-Z Electrode Effect in Mini-Ionization Chambers for Small Beam Dosimetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Larraga-Gutierrez, J

Purpose: To correct for the over-response of mini-ionization chambers with high-Z central electrodes. The hypothesis is that by applying a negative/reverse voltage, it is possible to suppress the signal generated in the high-Z central electrode by low-energy photons. Methods: The mini-ionization chambers used in the experiments were a PTW-31014, PTW-31006 and IBA-CC01. The PTW-31014 has an aluminum central electrode while the PTW-31006 and IBA-CC01 have a steel one. Total scatter factors (Scp) were measured for a 6 MV photon beam down to a square field size of 0.5 cm. The measurements were performed in water at 10 cm depth withmore » SAD of 100 cm. The Scp were measured with the dosimeters with +400V bias voltage. In the case of the PTW-31006 and IBA-CC01, the measurements were repeated with −400V bias voltage. Also, the field factors in water were calculated with Monte Carlo simulations for comparison. Results: The measured Scp at +400V with the PTW-31006 and IBA-CC01 detectors were in agreement within 0.2% down to a field size of 1.5 cm. Both dosimeters shown a systematic difference about 2.5% with the Scp measured with the PTW-31014 and the Monte Carlo calculated field factors. The measured Scp at −400V with the PTW-31006 and IBA-CC01 detectors were in close agreement with the PTW-31014 measured Scp and the field factors within 0.3 and 1.0%, respectively. In the case of the IBA-CC01 it was found a good agreement (1%) down to field size of 1.0 cm. All the dosimeters shown differences up to 17% between the measured Scp and the field factor for the 0.5 cm field size. Conclusion: By applying a negative/reverse voltage to the mini-ionization chambers with high-Z central electrode it was possible to correct for their over-response to low energy photons.« less

Low-Voltage Continuous Electrospinning Patterning.

PubMed

Li, Xia; Li, Zhaoying; Wang, Liyun; Ma, Guokun; Meng, Fanlong; Pritchard, Robyn H; Gill, Elisabeth L; Liu, Ye; Huang, Yan Yan Shery

2016-11-30

Electrospinning is a versatile technique for the construction of microfibrous and nanofibrous structures with considerable potential in applications ranging from textile manufacturing to tissue engineering scaffolds. In the simplest form, electrospinning uses a high voltage of tens of thousands volts to draw out ultrafine polymer fibers over a large distance. However, the high voltage limits the flexible combination of material selection, deposition substrate, and control of patterns. Prior studies show that by performing electrospinning with a well-defined "near-field" condition, the operation voltage can be decreased to the kilovolt range, and further enable more precise patterning of fibril structures on a planar surface. In this work, by using solution dependent "initiators", we demonstrate a further lowering of voltage with an ultralow voltage continuous electrospinning patterning (LEP) technique, which reduces the applied voltage threshold to as low as 50 V, simultaneously permitting direct fiber patterning. The versatility of LEP is shown using a wide range of combination of polymer and solvent systems for thermoplastics and biopolymers. Novel functionalities are also incorporated when a low voltage mode is used in place of a high voltage mode, such as direct printing of living bacteria; the construction of suspended single fibers and membrane networks. The LEP technique reported here should open up new avenues in the patterning of bioelements and free-form nano- to microscale fibrous structures.

Controlling Electron Backstreaming Phenomena Through the Use of a Transverse Magnetic Field

NASA Technical Reports Server (NTRS)

Foster, John E.; Patterson, Michael J.

2002-01-01

DEEP-SPACE mission propulsion requirements can be satisfied by the use of high specific impulse systems such as ion thrusters. For such missions. however. the ion thruster will be required to provide thrust for long periods of time. To meet the long operation time and high-propellant throughput requirements, thruster lifetime must be increased. In general, potential ion thruster failure mechanisms associated with long-duration thrusting can be grouped into four areas: (1) ion optics failure; (2) discharge cathode failure; (3) neutralizer failure; and (4) electron backstreaming caused by accelerator grid aperture enlargement brought on by accelerator grid erosion. The work presented here focuses on electron backstreaming. which occurs when the potential at the center of an accelerator grid aperture is insufficient to prevent the backflow of electrons into the ion thruster. The likelihood of this occurring depends on ion source operation time. plasma density, and grid voltages, as accelerator grid apertures enlarge as a result of erosion. Electrons that enter the gap between the high-voltage screen and accelerator grids are accelerated to the energies approximately equal to the beam voltage. This energetic electron beam (typically higher than 1 kV) can damage not only the ion source discharge cathode assembly. but also any of the discharge surfaces upstream of the ion acceleration optics that the electrons happen to impact. Indeed. past backstreaming studies have shown that near the backstreaming limit, which corresponds to the absolute value of the accelerator grid voltage below which electrons can backflow into the thruster, there is a rather sharp rise in temperature at structures such as the cathode keeper electrode. In this respect operation at accelerator grid voltages near the backstreaming limit is avoided. Generally speaking, electron backstreaming is prevented by operating the accelerator grid at a sufficiently negative voltage to ensure a sufficiently negative aperture center potential. This approach can provide the necessary margin assuming an expected aperture enlargement. Operation at very negative accelerator grid voltages, however, enhances ion charge-exchange and direct impingement erosion of the accelerator grid. The focus of the work presented here is the mitigation of electron backstreaming by the use of a magnetic field. The presence of a magnetic field oriented perpendicular to the thruster axis can significantly decrease the magnitude of the backflowing electron current by significantly reducing the electron diffusion coefficient. Negative ion sources utilize this principle to reduce the fraction of electrons in the negative ion beam. The focus of these efforts has been on the attenuation of electron current diffusing from the discharge plasma into the negative ion extraction optics by placing the transverse magnetic field upstream of the extraction electrodes. In contrast. in the case of positive ion sources such as ion thrusters, the approach taken in the work presented here is to apply the transverse field downstream of the ion extraction system so as to prevent electrons from flowing back into the source. It was found in the work presented here that the magnetic field also reduces the absolute value of the electron backstreaming limit voltage. In this respect. the applied transverse magnetic field provides two mechanisms for electron backstreaming mitigation: (1) electron current attenuation and (2) backstreaming limit voltage shift. Such a shift to less negative voltages can lead to reduced accelerator grid erosion rates.

DC Motor control using motor-generator set with controlled generator field

DOEpatents

Belsterling, Charles A.; Stone, John

1982-01-01

A d.c. generator is connected in series opposed to the polarity of a d.c. power source supplying a d.c. drive motor. The generator is part of a motor-generator set, the motor of which is supplied from the power source connected to the motor. A generator field control means varies the field produced by at least one of the generator windings in order to change the effective voltage output. When the generator voltage is exactly equal to the d.c. voltage supply, no voltage is applied across the drive motor. As the field of the generator is reduced, the drive motor is supplied greater voltage until the full voltage of the d.c. power source is supplied when the generator has zero field applied. Additional voltage may be applied across the drive motor by reversing and increasing the reversed field on the generator. The drive motor may be reversed in direction from standstill by increasing the generator field so that a reverse voltage is applied across the d.c. motor.

Continuous adjustment of threshold voltage in carbon nanotube field-effect transistors through gate engineering

NASA Astrophysics Data System (ADS)

Zhong, Donglai; Zhao, Chenyi; Liu, Lijun; Zhang, Zhiyong; Peng, Lian-Mao

2018-04-01

In this letter, we report a gate engineering method to adjust threshold voltage of carbon nanotube (CNT) based field-effect transistors (FETs) continuously in a wide range, which makes the application of CNT FETs especially in digital integrated circuits (ICs) easier. Top-gated FETs are fabricated using solution-processed CNT network films with stacking Pd and Sc films as gate electrodes. By decreasing the thickness of the lower layer metal (Pd) from 20 nm to zero, the effective work function of the gate decreases, thus tuning the threshold voltage (Vt) of CNT FETs from -1.0 V to 0.2 V. The continuous adjustment of threshold voltage through gate engineering lays a solid foundation for multi-threshold technology in CNT based ICs, which then can simultaneously provide high performance and low power circuit modules on one chip.

18/20 T high magnetic field scanning tunneling microscope with fully low voltage operability, high current resolution, and large scale searching ability.

PubMed

Li, Quanfeng; Wang, Qi; Hou, Yubin; Lu, Qingyou

2012-04-01

We present a home-built 18/20 T high magnetic field scanning tunneling microscope (STM) featuring fully low voltage (lower than ±15 V) operability in low temperatures, large scale searching ability, and 20 fA high current resolution (measured by using a 100 GOhm dummy resistor to replace the tip-sample junction) with a bandwidth of 3.03 kHz. To accomplish low voltage operation which is important in achieving high precision, low noise, and low interference with the strong magnetic field, the coarse approach is implemented with an inertial slider driven by the lateral bending of a piezoelectric scanner tube (PST) whose inner electrode is axially split into two for enhanced bending per volt. The PST can also drive the same sliding piece to inertial slide in the other bending direction (along the sample surface) of the PST, which realizes the large area searching ability. The STM head is housed in a three segment tubular chamber, which is detachable near the STM head for the convenience of sample and tip changes. Atomic resolution images of a graphite sample taken under 17.6 T and 18.0001 T are presented to show its performance. © 2012 American Institute of Physics

An intelligent detection method for high-field asymmetric waveform ion mobility spectrometry.

PubMed

Li, Yue; Yu, Jianwen; Ruan, Zhiming; Chen, Chilai; Chen, Ran; Wang, Han; Liu, Youjiang; Wang, Xiaozhi; Li, Shan

2018-04-01

In conventional high-field asymmetric waveform ion mobility spectrometry signal acquisition, multi-cycle detection is time consuming and limits somewhat the technique's scope for rapid field detection. In this study, a novel intelligent detection approach has been developed in which a threshold was set on the relative error of α parameters, which can eliminate unnecessary time spent on detection. In this method, two full-spectrum scans were made in advance to obtain the estimated compensation voltage at different dispersion voltages, resulting in a narrowing down of the whole scan area to just the peak area(s) of interest. This intelligent detection method can reduce the detection time to 5-10% of that of the original full-spectrum scan in a single cycle.

Dynamic Scattering Mode LCDs

NASA Astrophysics Data System (ADS)

Bahadur, Birendra

The following sections are included: * INTRODUCTION * CELL DESIGNING * EXPERIMENTAL OBSERVATIONS IN NEMATICS RELATED WITH DYNAMIC SCATTERING * Experimental Observations at D.C. Field and Electrode Effects * Experimental Observation at Low Frequency A.C. Fields * Homogeneously Aligned Nematic Regime * Williams Domains * Dynamic Scattering * Experimental Observation at High Frequency A.C. Field * Other Experimental Observations * THEORETICAL INTERPRETATIONS * Felici Model * Carr-Helfrich Model * D.C. Excitation * Dubois-Violette, de Gennes and Parodi Model * Low Freqency or Conductive Regime * High Frequency or Dielectric Regime * DYNAMIC SCATTERING IN SMECRIC A PHASE * ELECTRO-OPTICAL CHARACTERISTICS AND LIMITATIONS * Contrast Ratio vs. Voltage, Viewing Angle, Cell Gap, Wavelength and Temperature * Display Current vs. Voltage, Cell Gap and Temperature * Switching Time * Effect of Alignment * Effect of Conductivity, Temperature and Frequency * Addressing of DSM LCDs * Limitations of DSM LCDs * ACKNOWLEDGEMENTS * REFERENCES

Field emission from carbon nanotube fibers in varying anode-cathode gap with the consideration of contact resistance

NASA Astrophysics Data System (ADS)

Zhang, Peng; Fairchild, S. B.; Back, T. C.; Luo, Yi

2017-12-01

This paper studies field emission (FE) from a single carbon nanotube (CNT) fiber with different anode-cathode (AK) gap distances. It is found that the field enhancement factor depends strongly on the finite AK gap distance, due to the combination of geometrical effects and possible fiber morphology change. The geometrical effects of AK gap distance on the field enhancement factor are confirmed using COMSOL simulations. The slope drop in the Fowler-Northeim (FN) plot of the FE data in the high voltage is related to the electrical contact resistance between the CNT fiber and the substrate. It is found that even a small series resistance to the field emitter (<30% of the emission gap impedance) can strongly modify the FE characteristics in the high voltage regime, inducing a strong deviation from the linear FN plot.

Temperature dependent simulation of diamond depleted Schottky PIN diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti

2016-06-14

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond.more » The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.« less

Combined effect of constant high voltage electrostatic field and variable frequency pulsed electromagnetic field on the morphology of calcium carbonate scale in circulating cooling water systems.

PubMed

Zhao, Ju-Dong; Liu, Zhi-An; Zhao, Er-Jun

2014-01-01

Research on scale inhibition is of importance to improve the heat transfer efficiency of heat exchangers. The combined effect of high voltage electrostatic and variable frequency pulsed electromagnetic fields on calcium carbonate precipitation was investigated, both theoretically and experimentally. Using energy dispersive spectrum analysis, the predominant phase was found to be CaCO(3). The formed crystal phases mainly consist of calcite and aragonite, which is, in part, verified by theory. The results indicate that the setting of water flow velocity, and high voltage electrostatic and variable frequency pulsed electromagnetic fields is very important. Favorable values of these parameters can have a significant anti-scaling effect, with 68.95% of anti-scaling ratio for scale sample 13, while unfavorable values do not affect scale inhibition, but rather promoted fouling, such as scale sample 6. By using scanning electron microscopy analysis, when the anti-scaling ratio is positive, the particle size of scale was found to become smaller than that of untreated sample and the morphology became loose. The X-ray diffraction results verify that the good combined effect favors the appearance and growth of aragonite and restrains its transition to calcite. The mechanism for scale reduction is discussed.

Transmembrane potential measurements on plant cells using the voltage-sensitive dye ANNINE-6.

PubMed

Flickinger, Bianca; Berghöfer, Thomas; Hohenberger, Petra; Eing, Christian; Frey, Wolfgang

2010-11-01

The charging of the plasma membrane is a necessary condition for the generation of an electric-field-induced permeability increase of the plasmalemma, which is usually explained by the creation and the growth of aqueous pores. For cells suspended in physiological buffers, the time domain of membrane charging is in the submicrosecond range. Systematic measurements using Nicotiana tabacum L. cv. Bright Yellow 2 (BY-2) protoplasts stained with the fast voltage-sensitive fluorescence dye ANNINE-6 have been performed using a pulsed laser fluorescence microscopy setup with a time resolution of 5 ns. A clear saturation of the membrane voltage could be measured, caused by a strong membrane permeability increase, commonly explained by enhanced pore formation, which prevents further membrane charging by external electric field exposure. The field strength dependence of the protoplast's transmembrane potential V (M) shows strong asymmetric saturation characteristics due to the high resting potential of the plants plasmalemma. At the pole of the hyperpolarized hemisphere of the cell, saturation starts at an external field strength of 0.3 kV/cm, resulting in a measured transmembrane voltage shift of ∆V(M) = -150 mV, while on the cathodic (depolarized) cell pole, the threshold for enhanced pore formation is reached at a field strength of approximately 1.0 kV/cm and ∆V(M) = 450 mV, respectively. From this asymmetry of the measured maximum membrane voltage shifts, the resting potential of BY-2 protoplasts at the given experimental conditions can be determined to V(R) = -150 mV. Consequently, a strong membrane permeability increase occurs when the membrane voltage diverges |V(M)| = 300 mV from the resting potential of the protoplast. The largest membrane voltage change at a given external electric field occurs at the cell poles. The azimuthal dependence of the transmembrane potential, measured in angular intervals of 10° along the circumference of the cell, shows a flattening and a slight decrease at higher fields at the pole region due to enhanced pore formation. Additionally, at the hyperpolarized cell pole, a polarization reversal could be observed at an external field range around 1.0 kV/cm. This behavior might be attributed to a fast charge transfer through the membrane at the hyperpolarized pole, e.g., by voltage-gated channels.

High-performance, low-voltage electroosmotic pumps with molecularly thin silicon nanomembranes

PubMed Central

Snyder, Jessica L.; Getpreecharsawas, Jirachai; Fang, David Z.; Gaborski, Thomas R.; Striemer, Christopher C.; Fauchet, Philippe M.; Borkholder, David A.; McGrath, James L.

2013-01-01

We have developed electroosmotic pumps (EOPs) fabricated from 15-nm-thick porous nanocrystalline silicon (pnc-Si) membranes. Ultrathin pnc-Si membranes enable high electroosmotic flow per unit voltage. We demonstrate that electroosmosis theory compares well with the observed pnc-Si flow rates. We attribute the high flow rates to high electrical fields present across the 15-nm span of the membrane. Surface modifications, such as plasma oxidation or silanization, can influence the electroosmotic flow rates through pnc-Si membranes by alteration of the zeta potential of the material. A prototype EOP that uses pnc-Si membranes and Ag/AgCl electrodes was shown to pump microliter per minute-range flow through a 0.5-mm-diameter capillary tubing with as low as 250 mV of applied voltage. This silicon-based platform enables straightforward integration of low-voltage, on-chip EOPs into portable microfluidic devices with low back pressures. PMID:24167263

Photocurrent microscopy of contact resistance and charge carrier traps in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Liewald, C.; Reiser, D.; Westermeier, C.; Nickel, B.

2016-08-01

We use a pentacene transistor with asymmetric source drain contacts to test the sensitivity of scanning photocurrent microscopy (SPCM) for contact resistance and charge traps. The drain current of the device strongly depends on the choice of the drain electrode. In one case, more than 94% of the source drain voltage is lost due to contact resistance. Here, SPCM maps show an enhanced photocurrent signal at the hole-injecting contact. For the other bias condition, i.e., for ohmic contacts, the SPCM signal peaks heterogeneously along the channel. We argue from basic transport models that bright areas in SPCM maps indicate areas of large voltage gradients or high electric field strength caused by injection barriers or traps. Thus, SPCM allows us to identify and image the dominant voltage loss mechanism in organic field-effect transistors.

Analysis of high field effects on the steady-state current-voltage response of semi-insulating 4H-SiC for photoconductive switch applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tiskumara, R.; Joshi, R. P., E-mail: ravi.joshi@ttu.edu; Mauch, D.

A model-based analysis of the steady-state, current-voltage response of semi-insulating 4H-SiC is carried out to probe the internal mechanisms, focusing on electric field driven effects. Relevant physical processes, such as multiple defects, repulsive potential barriers to electron trapping, band-to-trap impact ionization, and field-dependent detrapping, are comprehensively included. Results of our model match the available experimental data fairly well over orders of magnitude variation in the current density. A number of important parameters are also extracted in the process through comparisons with available data. Finally, based on our analysis, the possible presence of holes in the samples can be discounted upmore » to applied fields as high as ∼275 kV/cm.« less

Fabrication of 4H-SiC n-channel IGBTs with ultra high blocking voltage

NASA Astrophysics Data System (ADS)

Yang, Xiaolei; Tao, Yonghong; Yang, Tongtong; Huang, Runhua; Song, Bai

2018-03-01

Owing to the conductivity modulation of silicon carbide (SiC) bipolar devices, n-channel insulated gate bipolar transistors (n-IGBTs) have a significant advantage over metal oxide semiconductor field effect transistors (MOSFETs) in ultra high voltage (UHV) applications. In this paper, backside grinding and laser annealing process were carried out to fabricate 4H-SiC n-IGBTs. The thickness of a drift layer was 120 μm, which was designed for a blocking voltage of 13 kV. The n-IGBTs carried a collector current density of 24 A/cm2 at a power dissipation of 300 W/cm2 when the gate voltage was 20 V, with a differential specific on-resistance of 140 mΩ·cm2.

Investigation of High-Intensity Ion Beam Generation in the Diode with External Magnetic Insulation and Explosive Plasma Emission Source

NASA Astrophysics Data System (ADS)

Shamanin, V. I.; Stepanov, A. V.; Rysbaev, K. Zh.

2018-04-01

The ion Br-diode in which plasma is generated under the action of a negative pre-pulse voltage is presented. Preliminary plasma formation allows the energy released in the diode during a positive voltage pulse to be increased. The high-energy ion beam parameters are investigated for the magnetic field induction changing from 0.8Bcr to 1.7Bcr.

Whole-cell imaging of the budding yeast Saccharomyces cerevisiae by high-voltage scanning transmission electron tomography.

PubMed

Murata, Kazuyoshi; Esaki, Masatoshi; Ogura, Teru; Arai, Shigeo; Yamamoto, Yuta; Tanaka, Nobuo

2014-11-01

Electron tomography using a high-voltage electron microscope (HVEM) provides three-dimensional information about cellular components in sections thicker than 1 μm, although in bright-field mode image degradation caused by multiple inelastic scattering of transmitted electrons limit the attainable resolution. Scanning transmission electron microscopy (STEM) is believed to give enhanced contrast and resolution compared to conventional transmission electron microscopy (CTEM). Samples up to 1 μm in thickness have been analyzed with an intermediate-voltage electron microscope because inelastic scattering is not a critical limitation, and probe broadening can be minimized. Here, we employed STEM at 1 MeV high-voltage to extend the useful specimen thickness for electron tomography, which we demonstrate by a seamless tomographic reconstruction of a whole, budding Saccharomyces cerevisiae yeast cell, which is ~3 μm in thickness. High-voltage STEM tomography, especially in the bright-field mode, demonstrated sufficiently enhanced contrast and intensity, compared to CTEM tomography, to permit segmentation of major organelles in the whole cell. STEM imaging also reduced specimen shrinkage during tilt-series acquisition. The fidelity of structural preservation was limited by cytoplasmic extraction, and the spatial resolution was limited by the relatively large convergence angle of the scanning probe. However, the new technique has potential to solve longstanding problems of image blurring in biological specimens beyond 1 μm in thickness, and may facilitate new research in cellular structural biology. Copyright © 2014 Elsevier B.V. All rights reserved.

Voltage Support Study of Smart PV Inverters on a High-Photovoltaic Penetration Utility Distribution Feeder

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding, Fei; Pratt, Annabelle; Bialek, Tom

2016-11-21

This paper reports on tools and methodologies developed to study the impact of adding rooftop photovoltaic (PV) systems, with and without the ability to provide voltage support, on the voltage profile of distribution feeders. Simulation results are provided from a study of a specific utility feeder. The simulation model of the utility distribution feeder was built in OpenDSS and verified by comparing the simulated voltages to field measurements. First, we set all PV systems to operate at unity power factor and analyzed the impact on feeder voltages. Then we conducted multiple simulations with voltage support activated for all the smartmore » PV inverters. These included different constant power factor settings and volt/VAR controls.« less

Corona-vacuum failure mechanism test facilities

NASA Technical Reports Server (NTRS)

Lalli, V. R.; Mueller, L. A.; Koutnik, E. A.

1975-01-01

A nondestructive corona-vacuum test facility for testing high-voltage power system components has been developed using commercially available hardware. The facility simulates operating temperature and vacuum while monitoring coronal discharges with residual gases. Corona threshold voltages obtained from statorette tests with various gas-solid dielectric systems and comparison with calculated data support the following conclusions: (1) air gives the highest corona threshold voltage and helium the lowest, with argon and helium-xenon mixtures intermediate; (2) corona threshold voltage increases with gas pressure; (3) corona threshold voltage for an armature winding can be accurately calculated by using Paschen curves for a uniform field; and (4) Paschen curves for argon can be used to calculate the corona threshold voltage in He-Xe mixtures, for which Paschen curves are unavailable.-

Development of a compact bushing for NBI

NASA Astrophysics Data System (ADS)

de Esch, H. P. L.; Simonin, A.; Grand, C.; Lepetit, B.; Lemoine, D.; Márquez-Mijares, M.; Minea, T.; Caillault, L.; Seznec, B.; Jager, T.; Odic, E.; Kirkpatrick, M. J.; Teste, Ph.; Dessante, Ph.; Almaksour, K.

2017-08-01

Research into a novel type of compact bushing is being conducted through the HVIV (High Voltage holding In Vacuum) partnership between CEA-Cadarache1, GeePs-Centralesupélec4, LPGP3 and LCAR2. The bushing aims to concentrate the high electric field inside its interior, rather than in the vacuum tank. Hence the field emission current is also concentrated inside the bushing and it can be attempted to suppress this so-called dark current by conditioning the internal surfaces and by adding gas. LCAR have performed theoretical quantum mechanical studies of electron field emission and the role of adsorbates in changing the work function. LPGP studied the ionization of gas due to field emission current and the behavior of micro particles exposed to emissive electron current in the vacuum gap under high electric fields. Experiments at Geeps have clarified the role of surface conditioning in reducing the dark current. Geeps also found that adding low pressure nitrogen gas to the vacuum is much more effective than helium in reducing the field emission. An interesting observation is the growth of carbon structures after exposure of an electrode to the electric field. Finally, IRFM have performed experiments on a single stage test bushing that features a 36 cm high porcelain insulator and two cylindrical electrode surfaces in vacuum or low-pressure gas. Using 0.1 Pa N2 gas, the voltage holding exceeded 185 kV over a 40 mm "vacuum" gap without dark current. Above this voltage, exterior breakdowns occurred over the insulator, which was in air. The project will finish with the fabrication of a 2-stage compact bushing, capable to withstand 400 kV.

Top-gate organic depletion and inversion transistors with doped channel and injection contact

NASA Astrophysics Data System (ADS)

Liu, Xuhai; Kasemann, Daniel; Leo, Karl

2015-03-01

Organic field-effect transistors constitute a vibrant research field and open application perspectives in flexible electronics. For a commercial breakthrough, however, significant performance improvements are still needed, e.g., stable and high charge carrier mobility and on-off ratio, tunable threshold voltage, as well as integrability criteria such as n- and p-channel operation and top-gate architecture. Here, we show pentacene-based top-gate organic transistors operated in depletion and inversion regimes, realized by doping source and drain contacts as well as a thin layer of the transistor channel. By varying the doping concentration and the thickness of the doped channel, we control the position of the threshold voltage without degrading on-off ratio or mobility. Capacitance-voltage measurements show that an inversion channel can indeed be formed, e.g., an n-doped channel can be inverted to a p-type inversion channel with highly p-doped contacts. The Cytop polymer dielectric minimizes hysteresis, and the transistors can be biased for prolonged cycles without a shift of threshold voltage, indicating excellent operation stability.

A voltage-division-type low-jitter self-triggered repetition-rate switch.

PubMed

Su, Jian-Cang; Zeng, Bo; Gao, Peng-Cheng; Li, Rui; Wu, Xiao-Long; Zhao, Liang

2016-10-01

A voltage-division-type (V/N) low-jitter self-triggered multi-stage switch is put forward. It comprises of a triggered corona gap, several quasi-uniform-field gaps, and an inversion inductor. When the corona gap is in the stage of self-breakdown, the multi-stage gaps are triggered and the switch is closed via an over-voltage. This type of V/N switch has the advantage of compact structure since the auxiliary components like the gas-blowing system and the triggered system are eliminated from the whole system. It also has advantages such as low breakdown jitter and high energy efficiency. The dependence of the self-triggered voltage on the over-voltage factor and the switch operating voltage is deduced. A switch of this type is designed and fabricated and experiments to research its characteristics are conducted. The results show that this switch can operate on a voltage of 1 MV at 50 Hz and can generate 1000 successive pulses with a jitter as low as 3% and an energy efficiency as high as 90%. This V/N switch can work under a high repetition rate with a long lifetime.

Investigation of defect-induced abnormal body current in fin field-effect-transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Kuan-Ju; Tsai, Jyun-Yu; Lu, Ying-Hsin

2015-08-24

This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing drain voltages. Notably, the unusual body leakage only occurs in three-dimensional structure devices. Based on measurements under different operation conditions, the abnormal body current can be attributed to fin surface defect-induced leakage current, and the mechanism is electron tunneling to the fin via the defects, resulting in holes left at the body terminal.

Enhancement of SPES source performances.

PubMed

Fagotti, E; Palmieri, A; Ren, X

2008-02-01

Installation of SPES source at LNL was finished in July 2006 and the first beam was extracted in September 2006. Commissioning results confirmed very good performance of the extracted current density. Conversely, source reliability was very poor due to glow-discharge phenomena, which were caused by the ion source axial magnetic field protruding in the high-voltage column. This problem was fixed by changing the stainless steel plasma electrode support with a ferromagnetic one. This new configuration required us to recalculate ion source solenoids positions and fields in order to recover the correct resonance pattern. Details on magnetic simulations and experimental results of high voltage column shielding are presented.

Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics

NASA Astrophysics Data System (ADS)

Sangwan, Vinod K.; Jariwala, Deep; Everaerts, Ken; McMorrow, Julian J.; He, Jianting; Grayson, Matthew; Lauhon, Lincoln J.; Marks, Tobin J.; Hersam, Mark C.

2014-02-01

Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current saturation with intrinsic gain >1.0 in vacuum (pressure < 2 × 10-5 Torr), and overall improved performance compared to control devices on conventional SiO2 gate dielectrics. Statistical analysis of the field-effect mobility and residual carrier concentration demonstrate high spatial uniformity of the dielectric interfacial properties and graphene transistor characteristics over full 3 in. wafers. This work thus establishes SANDs as an effective platform for large-area, high-performance graphene electronics.

Research and Experiments on a Unipolar Capacitive Voltage Sensor

PubMed Central

Zhou, Qiang; He, Wei; Li, Songnong; Hou, Xingzhe

2015-01-01

Voltage sensors are an important part of the electric system. In service, traditional voltage sensors need to directly contact a high-voltage charged body. Sensors involve a large volume, complex insulation structures, and high design costs. Typically an iron core structure is adopted. As a result, ferromagnetic resonance can occur easily during practical application. Moreover, owing to the multilevel capacitor divider, the sensor cannot reflect the changes of measured voltage in time. Based on the electric field coupling principle, this paper designs a new voltage sensor; the unipolar structure design solves many problems of traditional voltage sensors like the great insulation design difficulty and high costs caused by grounding electrodes. A differential signal input structure is adopted for the detection circuit, which effectively restrains the influence of the common-mode interference signal. Through sensor modeling, simulation and calculations, the structural design of the sensor electrode was optimized, miniaturization of the sensor was realized, the voltage division ratio of the sensor was enhanced, and the phase difference of sensor measurement was weakened. The voltage sensor is applied to a single-phase voltage class line of 10 kV for testing. According to the test results, the designed sensor is able to meet the requirements of accurate and real-time measurement for voltage of the charged conductor as well as to provide a new method for electricity larceny prevention and on-line monitoring of the power grid in an electric system. Therefore, it can satisfy the development demands of the smart power grid. PMID:26307992

Gas cluster ion beam surface treatments for reducing field emission and breakdown of electrodes and SRF cavities

NASA Astrophysics Data System (ADS)

Swenson, D. R.; Wu, A. T.; Degenkolb, E.; Insepov, Z.

2007-08-01

Sub-micron-scale surface roughness and contamination cause field emission that can lead to high-voltage breakdown of electrodes, and these are limiting factors in the development of high gradient RF technology. We are studying various Gas Cluster Ion Beam (GCIB) treatments to smooth, clean, etch and/or chemically alter electrode surfaces to allow higher fields and accelerating gradients, and to reduce the time and cost of conditioning high-voltage electrodes. For this paper, we have processed Nb, stainless steel and Ti electrode materials using beams of Ar, O2, or NF3 + O2 clusters with accelerating potentials up to 35 kV. Using a scanning field emission microscope (SFEM), we have repeatedly seen a dramatic reduction in the number of field emission sites on Nb coupons treated with GCIB. Smoothing effects on stainless steel and Ti substrates, evaluated using SEM and AFM imaging, show that 200-nm-wide polishing scratch marks are greatly attenuated. A 150-mm diameter GCIB-treated stainless steel electrode has shown virtually no DC field emission current at gradients over 20 MV/m.

Voltage sweep ion mobility spectrometry.

PubMed

Davis, Eric J; Williams, Michael D; Siems, William F; Hill, Herbert H

2011-02-15

Ion mobility spectrometry (IMS) is a rapid, gas-phase separation technique that exhibits excellent separation of ions as a standalone instrument. However, IMS cannot achieve optimal separation power with both small and large ions simultaneously. Similar to the general elution problem in chromatography, fast ions are well resolved using a low electric field (50-150 V/cm), whereas slow drifting molecules are best separated using a higher electric field (250-500 V/cm). While using a low electric field, IMS systems tend to suffer from low ion transmission and low signal-to-noise ratios. Through the use a novel voltage algorithm, some of these effects can be alleviated. The electric field was swept from low to high while monitoring a specific drift time, and the resulting data were processed to create a 'voltage-sweep' spectrum. If an optimal drift time is calculated for each voltage and scanned simultaneously, a spectrum may be obtained with optimal separation throughout the mobility range. This increased the resolving power up to the theoretical maximum for every peak in the spectrum and extended the peak capacity of the IMS system, while maintaining accurate drift time measurements. These advantages may be extended to any IMS, requiring only a change in software.

Magnetic field induced suppression of the forward bias current in Bi2Se3/Si Schottky barrier diodes

NASA Astrophysics Data System (ADS)

Jin, Haoming; Hebard, Arthur

Schottky diodes formed by van der Waals bonding between freshly cleaved flakes of the topological insulator Bi2Se3 and doped silicon substrates show electrical characteristics in good agreement with thermionic emission theory. The motivation is to use magnetic fields to modulate the conductance of the topologically protected conducting surface state. This surface state in close proximity to the semiconductor surface may play an important role in determining the nature of the Schottky barrier. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were obtained for temperatures in the range 50-300 K and magnetic fields, both perpendicular and parallel to the interface, as high as 7 T. The I-V curve shows more than 6 decades linearity on semi-logarithmic plots, allowing extraction of parameters such as ideality (η), zero-voltage Schottky barrier height (SBH), and series resistance (Rs). In forward bias we observe a field-induced decrease in current which becomes increasingly more pronounced at higher voltages and lower temperature, and is found to be correlated with changes in Rs rather than other barrier parameters. A comparison of changes in Rs in both field direction will be made with magnetoresistance in Bi2Se3 transport measurement. The work is supported by NSF through DMR 1305783.

High performance printed oxide field-effect transistors processed using photonic curing.

PubMed

Garlapati, Suresh Kumar; Marques, Gabriel Cadilha; Gebauer, Julia Susanne; Dehm, Simone; Bruns, Michael; Winterer, Markus; Tahoori, Mehdi Baradaran; Aghassi-Hagmann, Jasmin; Hahn, Horst; Dasgupta, Subho

2018-06-08

Oxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed/printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as low process temperatures and short exposure time and thereby, high throughput compatibility. Here, using dissimilar photonic curing concepts (UV-visible light and UV-laser), we demonstrate facile fabrication of high performance In 2 O 3 field-effect transistors (FETs). Beside the processing related issues (temperature, time etc.), the other known limitation of oxide electronics is the lack of high performance p-type semiconductors, which can be bypassed using unipolar logics from high mobility n-type semiconductors alone. Interestingly, here we have found that our chosen distinct photonic curing methods can offer a large variation in threshold voltage, when they are fabricated from the same precursor ink. Consequently, both depletion and enhancement-mode devices have been achieved which can be used as the pull-up and pull-down transistors in unipolar inverters. The present device fabrication recipe demonstrates fast processing of low operation voltage, high performance FETs with large threshold voltage tunability.

High performance printed oxide field-effect transistors processed using photonic curing

NASA Astrophysics Data System (ADS)

Garlapati, Suresh Kumar; Cadilha Marques, Gabriel; Gebauer, Julia Susanne; Dehm, Simone; Bruns, Michael; Winterer, Markus; Baradaran Tahoori, Mehdi; Aghassi-Hagmann, Jasmin; Hahn, Horst; Dasgupta, Subho

2018-06-01

Oxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed/printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as low process temperatures and short exposure time and thereby, high throughput compatibility. Here, using dissimilar photonic curing concepts (UV–visible light and UV-laser), we demonstrate facile fabrication of high performance In2O3 field-effect transistors (FETs). Beside the processing related issues (temperature, time etc.), the other known limitation of oxide electronics is the lack of high performance p-type semiconductors, which can be bypassed using unipolar logics from high mobility n-type semiconductors alone. Interestingly, here we have found that our chosen distinct photonic curing methods can offer a large variation in threshold voltage, when they are fabricated from the same precursor ink. Consequently, both depletion and enhancement-mode devices have been achieved which can be used as the pull-up and pull-down transistors in unipolar inverters. The present device fabrication recipe demonstrates fast processing of low operation voltage, high performance FETs with large threshold voltage tunability.

C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawarada, H., E-mail: kawarada@waseda.jp; Institute of Nano-Science and Nano-Engineering, Waseda University, Shinjuku, Tokyo 169-8555; Kagami Memorial Laboratory for Material Science and Technology, Waseda University, Shinjuku, Tokyo 169-0051

2014-07-07

By forming a highly stable Al{sub 2}O{sub 3} gate oxide on a C-H bonded channel of diamond, high-temperature, and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From room temperature to 400 °C (673 K), the variation of maximum drain-current is within 30% at a given gate bias. The maximum breakdown voltage (V{sub B}) of the MOSFET without a field plate is 600 V at a gate-drain distance (L{sub GD}) of 7 μm. We fabricated some MOSFETs for which V{sub B}/L{sub GD} > 100 V/μm. These values are comparable to those of lateral SiC or GaN FETs. The Al{sub 2}O{sub 3} was deposited on the C-Hmore » surface by atomic layer deposition (ALD) at 450 °C using H{sub 2}O as an oxidant. The ALD at relatively high temperature results in stable p-type conduction and FET operation at 400 °C in vacuum. The drain current density and transconductance normalized by the gate width are almost constant from room temperature to 400 °C in vacuum and are about 10 times higher than those of boron-doped diamond FETs.« less

Oxygen Displacement in Cuprates under IonicLiquid Field-Effect Gating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dubuis, Guy; Yacoby, Yizhak; Zhou, Hua

We studied structural changes in a 5 unit cell thick La 1.96Sr 0.04CuO 4 film, epitaxially grown on a LaSrAlO 4 substrate with a single unit cell buffer layer, when ultra-high electric fields were induced in the film by applying a gate voltage between the film and an ionic liquid in contact with it. Measuring the diffraction intensity along the substrate-defined Bragg rods and analyzing the results using a phase retrieval method we obtained the three-dimensional electron density in the film, buffer layer, and topmost atomic layers of the substrate under different applied gate voltages. The main structural observations were:more » (i) there were no structural changes when the voltage was negative, holes were injected into the film making it more metallic and screening the electric field; (ii) when the voltage was positive, the film was depleted of holes becoming more insulating, the electric field extended throughout the film, the partial surface monolayer became disordered, and planar oxygen atoms were displaced towards the sample surface; (iii) the changes in surface disorder and the oxygen displacements were both reversed when a negative voltage was applied; and (iv) the c-axis lattice constant of the film did not change in spite of the displacement of planar oxygen atoms.« less

Oxygen Displacement in Cuprates under IonicLiquid Field-Effect Gating

DOE PAGES

Dubuis, Guy; Yacoby, Yizhak; Zhou, Hua; ...

2016-08-15

We studied structural changes in a 5 unit cell thick La 1.96Sr 0.04CuO 4 film, epitaxially grown on a LaSrAlO 4 substrate with a single unit cell buffer layer, when ultra-high electric fields were induced in the film by applying a gate voltage between the film and an ionic liquid in contact with it. Measuring the diffraction intensity along the substrate-defined Bragg rods and analyzing the results using a phase retrieval method we obtained the three-dimensional electron density in the film, buffer layer, and topmost atomic layers of the substrate under different applied gate voltages. The main structural observations were:more » (i) there were no structural changes when the voltage was negative, holes were injected into the film making it more metallic and screening the electric field; (ii) when the voltage was positive, the film was depleted of holes becoming more insulating, the electric field extended throughout the film, the partial surface monolayer became disordered, and planar oxygen atoms were displaced towards the sample surface; (iii) the changes in surface disorder and the oxygen displacements were both reversed when a negative voltage was applied; and (iv) the c-axis lattice constant of the film did not change in spite of the displacement of planar oxygen atoms.« less

Non-perturbing voltage measurement in a coaxial cable with slab-coupled optical sensors.

PubMed

Stan, Nikola; Seng, Frederick; Shumway, LeGrand; King, Rex; Schultz, Stephen

2017-08-20

Voltage in a coaxial cable is measured by an electric-field optical fiber sensor exploiting the proportionality of voltage and electric field in a fixed structure. The sensor is inserted in a hole drilled through the dielectric of the RG-218 coaxial cable and sealed with epoxy to displace all air and prevent the adverse effects of charge buildup during high-voltage measurements. It is shown that the presence of the sensor in the coaxial cable does not significantly increase electrical reflections in the cable. A slab-coupled optical fiber sensor (SCOS) is used for its compact size and dielectric make. The dynamic range of 50 dB is shown experimentally with detection of signals as low as 1 V and up to 157 kV. A low corner of 0.3 Hz is demonstrated and the SCOS is shown to be able to measure 90 ns rise time.

Experimental Investigation of the Effect of the Driving Voltage of an Electroadhesion Actuator.

PubMed

Koh, Keng Huat; Sreekumar, M; Ponnambalam, S G

2014-06-25

This paper investigates the effect of driving voltage on the attachment force of an electroadhesion actuator, as the existing literature on the saturation of the adhesive force at a higher electric field is incomplete. A new type of electroadhesion actuator using normally available materials, such as aluminum foil, PVC tape and a silicone rubber sheet used for keyboard protection, has been developed with a simple layered structure that is capable of developing adhesive force consistently. The developed actuator is subjected to the experiment for the evaluation of various test surfaces; aluminum, brick, ceramic, concrete and glass. The driving high voltage is varied in steps to determine the characteristics of the output holding force. Results show a quadratic relation between F (adhesion force) and V (driving voltage) within the 2 kV range. After this range, the F - V responses consistently show a saturation trend at high electric fields. Next, the concept of the leakage current that can occur in the dielectric material and the corona discharge through air has been introduced. Results show that the voltage level, which corresponds to the beginning of the supply current, matches well with the beginning of the force saturation. With the confirmation of this hypothesis, a working model for electroadhesion actuation is proposed. Based on the experimental results, it is proposed that such a kind of actuator can be driven within a range of optimum high voltage to remain electrically efficient. This practice is recommended for the future design, development and characterization of electroadhesion actuators for robotic applications.

Experimental Investigation of the Effect of the Driving Voltage of an Electroadhesion Actuator

PubMed Central

Koh, Keng Huat; Sreekumar, M.; Ponnambalam, S. G.

2014-01-01

This paper investigates the effect of driving voltage on the attachment force of an electroadhesion actuator, as the existing literature on the saturation of the adhesive force at a higher electric field is incomplete. A new type of electroadhesion actuator using normally available materials, such as aluminum foil, PVC tape and a silicone rubber sheet used for keyboard protection, has been developed with a simple layered structure that is capable of developing adhesive force consistently. The developed actuator is subjected to the experiment for the evaluation of various test surfaces; aluminum, brick, ceramic, concrete and glass. The driving high voltage is varied in steps to determine the characteristics of the output holding force. Results show a quadratic relation between F (adhesion force) and V (driving voltage) within the 2 kV range. After this range, the F-V responses consistently show a saturation trend at high electric fields. Next, the concept of the leakage current that can occur in the dielectric material and the corona discharge through air has been introduced. Results show that the voltage level, which corresponds to the beginning of the supply current, matches well with the beginning of the force saturation. With the confirmation of this hypothesis, a working model for electroadhesion actuation is proposed. Based on the experimental results, it is proposed that such a kind of actuator can be driven within a range of optimum high voltage to remain electrically efficient. This practice is recommended for the future design, development and characterization of electroadhesion actuators for robotic applications. PMID:28788114

The effect of the geomagnetic field on negative voltage spheres in the ionospheric plasma: Fluid simulation

NASA Astrophysics Data System (ADS)

Ma, T.-Z.; Schunk, R. W.

1994-07-01

Experiments involving the interaction of spherical conducting objects biases with hight voltages in the Low-Earth-Orbit (LEO) environment have been conducted and designed. In these experiments, both positive and negative voltages have been applied to the spheres. Previously, there have been theoretical and numerical studies of positive voltage spheres in plasmas with and without magnetic fields. There also have been studies of negative voltage objects in unmagnetized plasmas. Here, we used a fluid model to study the plasma response to a negative voltage sphere immersed in a magnetized plasma. Our main purpose was to investigate the role of the magnetic field during the early-time interaction between the negative voltage sphere and the ambient plasma in the LEO environment. In this study, different applied voltages, magnetic field strengths, and rise-times of the applied voltages were considered. It was found that with the strength of the geomagnetic field the ions are basically not affected by the magnetic field on the time scale of hundreds of plasma periods considered in this study. The ion density distribution around the sphere and the collected ion flux by the sphere are basically the same as in the case without the magnetic field. The electron motion is strongly affected by the magnetic field. One effect is to change the nature of the electron over-shoot oscillation from regular to somewhat turbulent. Although the electrons move along the magnetic field much more easily than across the magnetic field, some redirection effect causes the electron density to distribute as if the magnetic field effect is minimal. The sheath struture and the electric field around the sphere tend to be spherical. A finite rise-time of the applied voltage reduces the oscillatory activities and delays the ion acceleration. However, the effect of the rise-time depends on both the duration of the rise-time and the ion plasma period.

Electro-optic high voltage sensor

DOEpatents

Davidson, James R.; Seifert, Gary D.

2003-09-16

A small sized electro-optic voltage sensor capable of accurate measurement of high voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation. A polarization beam displacer separates the input beam into two beams with orthogonal linear polarizations and causes one linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels effect elliptically polarizes the beam as it travels through the crystal. A reflector redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization. The system may include a detector for converting the output beams into electrical signals and a signal processor for determining the voltage based on an analysis of the output beams.

The investigation of a compact auto-connected wire-wrapped pulsed transformer

NASA Astrophysics Data System (ADS)

Wang, Yuwei; Zhang, Jiande; Chen, Dongqun; Cao, Shengguang; Li, Da; Zhang, Tianyang

2012-05-01

For the power conditioning circuit used to deliver power efficiently from flux compression generator (FCG) to the load with high impedance, an air-cored and wire-wrapped transformer convenient in coaxial connection to the other parts is investigated. To reduce the size and enhance the performance, an auto-connection is adopted. A fast and simple model is used to calculate the electrical parameters of the transformer. To evaluate the high voltage capability, the voltages across turns and the electric field distribution in the transformer are investigated. The calculated and the measured electrical parameters of the transformer show good agreements. And the safe operating voltage is predicted to exceed 500 kV. In the preliminary experiments, the transformer is tested in a power conditioning circuit with a capacitive power supply. It is demonstrated that the output voltage of the transformer reaches -342 kV under the input voltage of -81 kV.

The investigation of a compact auto-connected wire-wrapped pulsed transformer.

PubMed

Wang, Yuwei; Zhang, Jiande; Chen, Dongqun; Cao, Shengguang; Li, Da; Zhang, Tianyang

2012-05-01

For the power conditioning circuit used to deliver power efficiently from flux compression generator (FCG) to the load with high impedance, an air-cored and wire-wrapped transformer convenient in coaxial connection to the other parts is investigated. To reduce the size and enhance the performance, an auto-connection is adopted. A fast and simple model is used to calculate the electrical parameters of the transformer. To evaluate the high voltage capability, the voltages across turns and the electric field distribution in the transformer are investigated. The calculated and the measured electrical parameters of the transformer show good agreements. And the safe operating voltage is predicted to exceed 500 kV. In the preliminary experiments, the transformer is tested in a power conditioning circuit with a capacitive power supply. It is demonstrated that the output voltage of the transformer reaches -342 kV under the input voltage of -81 kV.

A Critical Analysis and Assessment of High Power Switches

DTIC Science & Technology

1978-09-01

applications. Because of field-distorting corona discharges in high voltage gas gaps it is difficult to predict the exact break- down strength of a nonuniform ...applied field. The streamer velocity is a/R Vs =E 2 a/R (A-9) i n i - laiR -i e o 411 where S= mobility of electrons E = applied electric field a = length

Highly sensitive protein detection by combination of atomic force microscopy fishing with charge generation and mass spectrometry analysis.

PubMed

Ivanov, Yuri D; Pleshakova, Tatyana; Malsagova, Krystina; Kozlov, Andrey; Kaysheva, Anna; Kopylov, Arthur; Izotov, Alexander; Andreeva, Elena; Kanashenko, Sergey; Usanov, Sergey; Archakov, Alexander

2014-10-01

An approach combining atomic force microscopy (AFM) fishing and mass spectrometry (MS) analysis to detect proteins at ultra-low concentrations is proposed. Fishing out protein molecules onto a highly oriented pyrolytic graphite surface coated with polytetrafluoroethylene film was carried out with and without application of an external electric field. After that they were visualized by AFM and identified by MS. It was found that injection of solution leads to charge generation in the solution, and an electric potential within the measuring cell is induced. It was demonstrated that without an external electric field in the rapid injection input of diluted protein solution the fishing is efficient, as opposed to slow fluid input. The high sensitivity of this method was demonstrated by detection of human serum albumin and human cytochrome b5 in 10(-17) -10(-18) m water solutions. It was shown that an external negative voltage applied to highly oriented pyrolytic graphite hinders the protein fishing. The efficiency of fishing with an external positive voltage was similar to that obtained without applying any voltage. © 2014 FEBS.

Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate Switching Time Analysis

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; Macleod, Todd C.; Ho, Fat D.

2006-01-01

Previous research investigated the modeling of a N Wga te constructed of Metal-Ferroelectric- Semiconductor Field-Effect Transistors (MFSFETs) to obtain voltage transfer curves. The NAND gate was modeled using n-channel MFSFETs with positive polarization for the standard CMOS n-channel transistors and n-channel MFSFETs with negative polarization for the standard CMOS p-channel transistors. This paper investigates the MFSFET NAND gate switching time propagation delay, which is one of the other important parameters required to characterize the performance of a logic gate. Initially, the switching time of an inverter circuit was analyzed. The low-to-high and high-to-low propagation time delays were calculated. During the low-to-high transition, the negatively polarized transistor pulls up the output voltage, and during the high-to-low transition, the positively polarized transistor pulls down the output voltage. The MFSFETs were simulated by using a previously developed model which utilized a partitioned ferroelectric layer. Then the switching time of a 2-input NAND gate was analyzed similarly to the inverter gate. Extension of this technique to more complicated logic gates using MFSFETs will be studied.

Experiments on H2-O2MHD power generation

NASA Technical Reports Server (NTRS)

Smith, J. M.

1980-01-01

Magnetohydrodynamic power generation experiments utilizing a cesium-seeded H2-O2 working fluid were carried out using a diverging area Hall duct having an entrance Mach number of 2. The experiments were conducted in a high-field strength cryomagnet facility at field strengths up to 5 tesla. The effects of power takeoff location, axial duct location within the magnetic field, generator loading, B-field strength, and electrode breakdown voltage were investigated. For the operating conditions of these experiments, it is found that the power output increases with the square of the B-field and can be limited by choking of the channel or interelectrode voltage breakdown which occurs at Hall fields greater than 50 volts/insulator. Peak power densities of greater than 100 MW/cu M were achieved.

High field conduction in Pb doped amorphous Se-Te system

NASA Astrophysics Data System (ADS)

Anjali, Patial, Balbir Singh; Thakur, Nagesh

2018-05-01

In the present study, DC conductivity measurements of as-Se80-xTe20Pbx (x = 0, 1 and 2) glassy alloys are made in the temperature range 298-318 K and in the voltage range 0-180 V. Current-voltage (I-V) characteristics point toward ohmic behavior at low electric field and non-ohmic is observed at high electric field. The variation of ln(I/V) against V are nearly found straight curves but slope of these curves does not decrease linearly with temperature indicates that the space charge limited conduction (SCLC) is absent. Instead the linear relation between ln(I) and V1/2 confirms that the conduction is either Poole-Frenkel type or Schottky emission. A detailed analysis shows that the dominant mechanism is Poole-Frenkel type conduction.

High power linear pulsed beam annealer. [Patent application

DOEpatents

Strathman, M.D.; Sadana, D.K.; True, R.B.

1980-11-26

A high power pulsed electron beam system for annealing semiconductors is comprised of an electron gun having a heated cathode, control grid and focus ring for confining the pulsed beam of electrons to a predetermined area, and a curved drift tube. The drift tube and an annular Faraday shield between the focus ring and the drift tube are maintained at a high positive voltage with respect to the cathode to accelerate electrons passing through the focus ring, thereby eliminating space charge limitations on the emission of electrons from said gun. A coil surrounding the curved drift tube provides a magnetic field which maintains the electron beam focused about the axis of the tube. The magnetic field produced by the coil around the curved tube imparts motion to electrons in a spiral path for shallow penetration of the electrons into a target. It also produces a scalloped profile of the electron beam. A second drift tube spaced a predetermined distance from the curved tube is positioned with its axis aligned with the axis of the first drift tube. The second drift tube and the target holder are maintained at a reference voltage between the cathode voltage and the curved tube voltage to decelerate the electrons. A second coil surrounding the second drift tube, maintains the electron beam focused about the axis of the second drift tube. The magnetic field of the second coil comprises the electron beam to the area of the semiconductor on the target holder.

High voltage spark carbon fiber detection system

NASA Technical Reports Server (NTRS)

Yang, L. C.

1980-01-01

The pulse discharge technique was used to determine the length and density of carbon fibers released from fiber composite materials during a fire or aircraft accident. Specifications are given for the system which uses the ability of a carbon fiber to initiate spark discharge across a high voltage biased grid to achieve accurate counting and sizing of fibers. The design of the system was optimized, and prototype hardware proved satisfactory in laboratory and field tests.

High reliable and stable organic field-effect transistor nonvolatile memory with a poly(4-vinyl phenol) charge trapping layer based on a pn-heterojunction active layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiang, Lanyi; Ying, Jun; Han, Jinhua

2016-04-25

In this letter, we demonstrate a high reliable and stable organic field-effect transistor (OFET) based nonvolatile memory (NVM) with a polymer poly(4-vinyl phenol) (PVP) as the charge trapping layer. In the unipolar OFETs, the inreversible shifts of the turn-on voltage (V{sub on}) and severe degradation of the memory window (ΔV{sub on}) at programming (P) and erasing (E) voltages, respectively, block their application in NVMs. The obstacle is overcome by using a pn-heterojunction as the active layer in the OFET memory, which supplied a holes and electrons accumulating channel at the supplied P and E voltages, respectively. Both holes and electronsmore » transferring from the channels to PVP layer and overwriting the trapped charges with an opposite polarity result in the reliable bidirectional shifts of V{sub on} at P and E voltages, respectively. The heterojunction OFET exhibits excellent nonvolatile memory characteristics, with a large ΔV{sub on} of 8.5 V, desired reading (R) voltage at 0 V, reliable P/R/E/R dynamic endurance over 100 cycles and a long retention time over 10 years.« less

High-intensity pulsed beam source with tunable operation mode

NASA Astrophysics Data System (ADS)

Nashilevskiy, A. V.; Kanaev, G. G.; Ezhov, V. V.; Shamanin, V. I.

2017-05-01

The report presents the design of an electron and an ion pulsed accelerator. The powerful high-voltage pulse generator of the accelerator and the vacuum bushing insulator is able to change the polarity of the output voltage. The low-inductance matching transformer provides an increase in the DFL output impedance by 4 times. The generator based on a high voltage pulse transformer and a pseudo spark switch is applied for DFL charging. The high-impedance magnetically insulated focusing diode with Br magnetic field and the “passive” anode was used to realize the ion beam generation mode. The plasma is formed on the surface of the anode caused by an electrical breakdown at the voltage edge pulse; as a result, the carbon ion and proton beam is generated. This beam has the following parameters: the current density is about 400 A/cm2 (in focus): the applied voltage is up to 450 kV. The accelerator is designed for the research on the interaction of the charged particle pulsed beams with materials and for the development of technological processes of a material modification.

High Voltage, Fast-Switching Module for Active Control of Magnetic Fields and Edge Plasma Currents

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth; Prager, James; Slobodov, Ilia

2016-10-01

Fast, reliable, real-time control of plasma is critical to the success of magnetic fusion science. High voltage and current supplies are needed to mitigate instabilities in all experiments as well as disruption events in large scale tokamaks for steady-state operation. Silicon carbide (SiC) MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities; however, these devices are limited to 1.2-1.7 kV devices. As fusion enters the long-pulse and burning plasma eras, efficiency of power switching will be important. Eagle Harbor Technologies (EHT), Inc. developing a high voltage SiC MOSFET module that operates at 10 kV. This switch module utilizes EHT gate drive technology, which has demonstrated the ability to increase SiC MOSFET switching efficiency. The module will allow more rapid development of high voltage switching power supplies at lower cost necessary for the next generation of fast plasma feedback and control. EHT is partnering with the High Beta Tokamak group at Columbia to develop detailed high voltage module specifications, to ensure that the final product meets the needs of the fusion science community.

Changes in the superconducting properties of high-T(sub c) ceramics produced by applied electric fields

NASA Technical Reports Server (NTRS)

Smirnov, B. I.; Orlova, T. S.; Kaufmann, H.-J.

1995-01-01

Effect of an electrostatic field in the electrode-insulator-superconductor system on the current-voltage characteristics of high-T(sub c) ceramics with various composition and different preparation technology has been studied at 77 K. Ceramics of Y-Ba-Cu-O (123) and Bi-Pb-Sr-Ca-Cu-O (2223) systems and also ones doped by Ag have been used. Electric field strength has been up to 140 MV/m. It has been shown that there are reversible changes in the critical current I(sub c) and in the conductivity in electric field at the currents somewhat more than I(sub c) at T is less than T(sub c), while at T is greater than T(sub c) the noticeable electric field effect has not been found. These effects are qualitatively similar in both ceramic systems. High negative and positive gate voltages result in an increase of the conductivity. The electric field effect is modified by magnetic field H. The field effect decreases with increasing magnetic field and disappears at H is greater than 30 Oe. In Y-Ba-Cu-O/Ag (10 wt. percent) ceramics the field effect is practically absent. It may be supposed that in the ceramics the field-induced effect is consistent with weak links at grain boundaries.

Ultrastable Natural Ester-Based Nanofluids for High Voltage Insulation Applications.

PubMed

Peppas, Georgios D; Bakandritsos, Aristides; Charalampakos, Vasilis P; Pyrgioti, Eleftheria C; Tucek, Jiri; Zboril, Radek; Gonos, Ioannis F

2016-09-28

Nanofluids for high voltage insulation systems have emerged as a potential substitute for liquid dielectrics in industrial applications. Nevertheless, the sedimentation of nanoparticles has been so far a serious barrier for their wide and effective exploitation. The present work reports on the development and in-depth characterization of colloidally ultrastable natural ester oil insulation systems containing iron oxide nanocrystals which lift the problem of sedimentation and phase separation. Compared to state-of-the-art systems, the final product is endowed with increased dielectric strength, faster thermal response, lower dielectric losses (decreased dissipation factor: tan δ), and very high endurance during discharge stressing. The developed nanofluid was studied and compared with a similar system containing commercial iron oxide nanoparticles, the latter demonstrating extensive sedimentation. Herein, the dielectric properties of the nanofluids are analyzed at various concentrations by means of breakdown voltage and dissipation factor measurements. The characterization techniques unequivocally demonstrate the high performance reliability of the reported nanofluid, which constitutes a significant breakthrough in the field of high voltage insulation technologies.

In-Operando Spatial Imaging of Edge Termination Electric Fields in GaN Vertical p-n Junction Diodes

DOE PAGES

Leonard, Francois; Dickerson, J. R.; King, M. P.; ...

2016-05-03

Control of electric fields with edge terminations is critical to maximize the performance of high-power electronic devices. We proposed a variety of edge termination designs which makes the optimization of such designs challenging due to many parameters that impact their effectiveness. And while modeling has recently allowed new insight into the detailed workings of edge terminations, the experimental verification of the design effectiveness is usually done through indirect means, such as the impact on breakdown voltages. In this letter, we use scanning photocurrent microscopy to spatially map the electric fields in vertical GaN p-n junction diodes in operando. We alsomore » reveal the complex behavior of seemingly simple edge termination designs, and show how the device breakdown voltage correlates with the electric field behavior. Modeling suggests that an incomplete compensation of the p-type layer in the edge termination creates a bilayer structure that leads to these effects, with variations that significantly impact the breakdown voltage.« less

Optical Characterization of Component Wear and Near-Field Plasma of the Hermes Thruster

NASA Technical Reports Server (NTRS)

Williams, George J., Jr.; Kamhawi, Hani

2015-01-01

Optical emission spectral (OES) data are presented which correlate trends in sputtered species and the near-field plasma with the Hall-Effect Rocket with Magnetic Shielding (HERMeS) thruster operating condition. The relative density of singly-ionized xenon (Xe II) is estimated using a collisional-radiative model. OES data were collected at three radial and several axial locations downstream of the thruster's exit plane. These data were deconvolved to show the structure for the near-field plasma as a function of thruster operating condition. The magnetic field is shown to have a much greater affect on plasma structure than the discharge voltage with the primary ionization/acceleration zone boundary being similar for all nominal operating voltages at constant power. OES measurement of sputtered boron shows that the HERMeS thruster is magnetically shielded across its operating envelope. Preliminary assessment of carbon sputtered from the keeper face suggest it increases significantly with operating voltage, but the uncertainty associated with these measurements is very high.

Acoustic spin pumping in magnetoelectric bulk acoustic wave resonator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Polzikova, N. I., E-mail: polz@cplire.ru; Alekseev, S. G.; Pyataikin, I. I.

2016-05-15

We present the generation and detection of spin currents by using magnetoelastic resonance excitation in a magnetoelectric composite high overtone bulk acoustic wave (BAW) resonator (HBAR) formed by a Al-ZnO-Al-GGG-YIG-Pt structure. Transversal BAW drives magnetization oscillations in YIG film at a given resonant magnetic field, and the resonant magneto-elastic coupling establishes the spin-current generation at the Pt/YIG interface. Due to the inverse spin Hall effect (ISHE) this BAW-driven spin current is converted to a dc voltage in the Pt layer. The dependence of the measured voltage both on magnetic field and frequency has a resonant character. The voltage is determinedmore » by the acoustic power in HBAR and changes its sign upon magnetic field reversal. We compare the experimentally observed amplitudes of the ISHE electrical field achieved by our method and other approaches to spin current generation that use surface acoustic waves and microwave resonators for ferromagnetic resonance excitation, with the theoretically expected values.« less

Effects of substrate voltage on noise characteristics and hole lifetime in SOI metal-oxide-semiconductor field-effect transistor photon detector.

PubMed

Putranto, Dedy Septono Catur; Priambodo, Purnomo Sidi; Hartanto, Djoko; Du, Wei; Satoh, Hiroaki; Ono, Atsushi; Inokawa, Hiroshi

2014-09-08

Low-frequency noise and hole lifetime in silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) are analyzed, considering their use in photon detection based on single-hole counting. The noise becomes minimum at around the transition point between front- and back-channel operations when the substrate voltage is varied, and increases largely on both negative and positive sides of the substrate voltage showing peculiar Lorentzian (generation-recombination) noise spectra. Hole lifetime is evaluated by the analysis of drain current histogram at different substrate voltages. It is found that the peaks in the histogram corresponding to the larger number of stored holes become higher as the substrate bias becomes larger. This can be attributed to the prolonged lifetime caused by the higher electric field inside the body of SOI MOSFET. It can be concluded that, once the inversion channel is induced for detection of the photo-generated holes, the small absolute substrate bias is favorable for short lifetime and low noise, leading to high-speed operation.

Considerations for a Standardized Test for Potential-Induced Degradation of Crystalline Silicon PV Modules (Presentation)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hacke, P.

2012-03-01

Over the past decade, there have been observations of module degradation and power loss because of the stress that system voltage bias exerts. This results in part from qualification tests and standards note adequately evaluating for the durability of modules to the long-term effects of high voltage bias that they experience in fielded arrays. This talk deals with factors for consideration, progress, and information still needed for a standardized test for degradation due to system voltage stress.

High field superconducting magnets

NASA Technical Reports Server (NTRS)

Hait, Thomas P. (Inventor); Shirron, Peter J. (Inventor)

2011-01-01

A superconducting magnet includes an insulating layer disposed about the surface of a mandrel; a superconducting wire wound in adjacent turns about the mandrel to form the superconducting magnet, wherein the superconducting wire is in thermal communication with the mandrel, and the superconducting magnet has a field-to-current ratio equal to or greater than 1.1 Tesla per Ampere; a thermally conductive potting material configured to fill interstices between the adjacent turns, wherein the thermally conductive potting material and the superconducting wire provide a path for dissipation of heat; and a voltage limiting device disposed across each end of the superconducting wire, wherein the voltage limiting device is configured to prevent a voltage excursion across the superconducting wire during quench of the superconducting magnet.

Reduced voltage sensitivity in a K+-channel voltage sensor by electric field remodeling

PubMed Central

González-Pérez, Vivian; Stack, Katherine; Boric, Katica; Naranjo, David

2010-01-01

Propagation of the nerve impulse relies on the extreme voltage sensitivity of Na+ and K+ channels. The transmembrane movement of four arginine residues, located at the fourth transmembrane segment (S4), in each of their four voltage-sensing domains is mostly responsible for the translocation of 12 to 13 eo across the transmembrane electric field. Inserting additional positively charged residues between the voltage-sensing arginines in S4 would, in principle, increase voltage sensitivity. Here we show that either positively or negatively charged residues added between the two most external sensing arginines of S4 decreased voltage sensitivity of a Shaker voltage-gated K+-channel by up to ≈50%. The replacement of Val363 with a charged residue displaced inwardly the external boundaries of the electric field by at least 6 Å, leaving the most external arginine of S4 constitutively exposed to the extracellular space and permanently excluded from the electric field. Both the physical trajectory of S4 and its electromechanical coupling to open the pore gate seemed unchanged. We propose that the separation between the first two sensing charges at resting is comparable to the thickness of the low dielectric transmembrane barrier they must cross. Thus, at most a single sensing arginine side chain could be found within the field. The conserved hydrophobic nature of the residues located between the voltage-sensing arginines in S4 may shape the electric field geometry for optimal voltage sensitivity in voltage-gated ion channels. PMID:20194763

Spectral response of atmospheric electric field measurements near AC high voltage power lines

NASA Astrophysics Data System (ADS)

Silva, H. G.; Matthews, J. C.; Wright, M. D.; Shallcross, D. E.

2015-10-01

To understand the influence of corona ion emission on the atmospheric electrical field, measurements were made near to two AC high voltage power lines. A JCI 131 field-mill recorded the atmospheric electric field over one year. Meteorological measurements were also taken. The data series is divided in four zones (dependent on wind direction): whole zones, Z0; zone 1, Z1; zone 2, Z2; zone 3, Z3. Z3 is the least affected by corona ion emission and for that reason it is used as a reference against Z1 and Z2, which are strongly influenced by this phenomena. Analysis was undertaken for all weather days and dry days only. The Lomb-Scargle strategy developed for unevenly spaced time-series is used to calculate the spectral response of the aforementioned zones. Only frequencies above 1 minute are considered.

Particle-in-cell modeling of the nanosecond field emission driven discharge in pressurized hydrogen

NASA Astrophysics Data System (ADS)

Levko, Dmitry; Yatom, Shurik; Krasik, Yakov E.

2018-02-01

The high-voltage field-emission driven nanosecond discharge in pressurized hydrogen is studied using the one-dimensional Particle-in-Cell Monte Carlo collision model. It is obtained that the main part of the field-emitted electrons becomes runaway in the thin cathode sheath. These runaway electrons propagate the entire cathode-anode gap, creating rather dense (˜1012 cm-3) seeding plasma electrons. In addition, these electrons initiate a streamer propagating through this background plasma with a speed ˜30% of the speed of light. Such a high streamer speed allows the self-acceleration mechanism of runaway electrons present between the streamer head and the anode to be realized. As a consequence, the energy of runaway electrons exceeds the cathode-anode gap voltage. In addition, the influence of the field emission switching-off time is analyzed. It is obtained that this time significantly influences the discharge dynamics.

Nonlinear conductivity in silicon nitride

NASA Astrophysics Data System (ADS)

Tuncer, Enis

2017-08-01

To better comprehend electrical silicon-package interaction in high voltage applications requires full characterization of the electrical properties of dielectric materials employed in wafer and package level design. Not only the packaging but wafer level dielectrics, i.e. passivation layers, would experience high electric fields generated by the voltage applied pads. In addition the interface between the passivation layer and a mold compound might develop space charge because of the mismatch in electrical properties of the materials. In this contribution electrical properties of a thin silicon nitride (Si3N4) dielectric is reported as a function of temperature and electric field. The measured values later analyzed using different temperature dependent exponential expressions and found that the Mott variable range hopping conduction model was successful to express the data. A full temperature/electric field dependency of conductivity is generated. It was found that the conduction in Si3N4 could be expressed like a field ionization or Fowler-Nordheim mechanism.

Planar multijunction high voltage solar cells

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr.; Chai, A. T.; Goradia, C.

1980-01-01

Technical considerations, preliminary results, and fabrication details are discussed for a family of high-voltage planar multi-junction (PMJ) solar cells which combine the attractive features of planar cells with conventional or interdigitated back contacts and the vertical multijunction (VMJ) solar cell. The PMJ solar cell is internally divided into many voltage-generating regions, called unit cells, which are internally connected in series. The key to obtaining reasonable performance from this device was the separation of top surface field regions over each active unit cell. Using existing solar cell fabricating methods, output voltages in excess of 20 volts per linear centimeter are possible. Analysis of the new device is complex, and numerous geometries are being studied which should provide substantial benefits in both normal sunlight usage as well as with concentrators.

Bioelectromagnetics 2005

DTIC Science & Technology

2006-08-14

fields in wound healing and nerve regeneration; 2) ultrashort high voltage pulses for tumor treatment; 3) therapeutic uses of magnetic fields; 4...7 Session 3: Role Of Electric Fields In Wound Healing And Nerve Regeneration (Continued)..........26 Session 4: Exposure...8 Bioelectromagnetics 2005, Dublin, Ireland Session 1: Role Of Electric Fields In Wound Healing And Nerve Regeneration Chairs: Richard

A Fiber-Optic Sensor for Acoustic Emission Detection in a High Voltage Cable System

PubMed Central

Zhang, Tongzhi; Pang, Fufei; Liu, Huanhuan; Cheng, Jiajing; Lv, Longbao; Zhang, Xiaobei; Chen, Na; Wang, Tingyun

2016-01-01

We have proposed and demonstrated a Michelson interferometer-based fiber sensor for detecting acoustic emission generated from the partial discharge (PD) of the accessories of a high-voltage cable system. The developed sensor head is integrated with a compact and relatively high sensitivity cylindrical elastomer. Such a sensor has a broadband frequency response and a relatively high sensitivity in a harsh environment under a high-voltage electric field. The design and fabrication of the sensor head integrated with the cylindrical elastomer is described, and a series of experiments was conducted to evaluate the sensing performance. The experimental results demonstrate that the sensitivity of our developed sensor for acoustic detection of partial discharges is 1.7 rad/(m⋅Pa). A high frequency response up to 150 kHz is achieved. Moreover, the relatively high sensitivity for the detection of PD is verified in both the laboratory environment and gas insulated switchgear. The obtained results show the great potential application of a Michelson interferometer-based fiber sensor integrated with a cylindrical elastomer for in-situ monitoring high-voltage cable accessories for safety work. PMID:27916900

High-voltage, high-power, solid-state remote power controllers for aerospace applications

NASA Technical Reports Server (NTRS)

Sturman, J. C.

1985-01-01

Two general types of remote power controller (RPC) that combine the functions of a circuit breaker and a switch were developed for use in direct-current (dc) aerospace systems. Power-switching devices used in these designs are the relatively new gate-turnoff thyristor (GTO) and poweer metal-oxide-semiconductor field-effect transistors (MOSFET). The various RPC's can switch dc voltages to 1200 V and currents to 100 A. Seven different units were constructed and subjected to comprehensive laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times to limit voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout and microsecond tripout for large overloads. The basic circuits developed can be used to build switchgear limited only by the ratings of the switching device used.

Feasible voltage-tap based quench detection in a Ag/Bi-2212 coil enabled by fast 3D normal zone propagation

DOE PAGES

Shen, Tengming; Ye, Liyang; Li, Pei

2016-07-01

For this study, small insert solenoids have been built using a commercial Ag/Bi-2212 multifilamentary round wire, insulated with a new thin TiO 2– polymer coating insulation (thickness in ~20 μm versus ~100 μm for a commonly used mullite braided sleeve insulation), and characterized in background magnetic field up to 14 T at 4.2 K to explore the high-field performance and quench detection of Bi-2212 magnets. The coil has no visible leakage and no electrical shorts after reaction, and it carries 280 A/mm -2 in a background field 14 T and generates an additional 1.7 T. A notable result is that,more » despite normal zones propagate slowly along the conductor, the hot spot temperature upon detection increases only from 40 K to 60 K when the resistive quench detection voltage threshold increases from 0.1 V to 1 V for all operating current density investigated, showing that quench detection using voltage taps is feasible for this coil. This is in a strong contrast to a coil we previously built to the same specifications but from wires insulated with the mullite braided sleeve insulation, for which the hot spot temperature upon detection increases from ~80 K to ~140 K while increasing from the detection voltage threshold from 0.1 V to 1 V, and thus for which quench detection using voltage taps presents significant risks, consistent with the common belief that the effectiveness of quench detection using voltage taps for superconducting magnets built using high temperature superconductors is seriously compromised by their slow normal zone propagation. This striking difference is ascribed to the fast transverse quench propagation enabled by thin insulation and improved thermal coupling between conductor turns. Finally, this work demonstrates that quench detection for high-temperature superconducting magnets highly depends on the design and construction of the coils such as insulation materials used and this dependence should be factored into the overall magnet design.« less

Feasible voltage-tap based quench detection in a Ag/Bi-2212 coil enabled by fast 3D normal zone propagation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shen, Tengming; Ye, Liyang; Li, Pei

For this study, small insert solenoids have been built using a commercial Ag/Bi-2212 multifilamentary round wire, insulated with a new thin TiO 2– polymer coating insulation (thickness in ~20 μm versus ~100 μm for a commonly used mullite braided sleeve insulation), and characterized in background magnetic field up to 14 T at 4.2 K to explore the high-field performance and quench detection of Bi-2212 magnets. The coil has no visible leakage and no electrical shorts after reaction, and it carries 280 A/mm -2 in a background field 14 T and generates an additional 1.7 T. A notable result is that,more » despite normal zones propagate slowly along the conductor, the hot spot temperature upon detection increases only from 40 K to 60 K when the resistive quench detection voltage threshold increases from 0.1 V to 1 V for all operating current density investigated, showing that quench detection using voltage taps is feasible for this coil. This is in a strong contrast to a coil we previously built to the same specifications but from wires insulated with the mullite braided sleeve insulation, for which the hot spot temperature upon detection increases from ~80 K to ~140 K while increasing from the detection voltage threshold from 0.1 V to 1 V, and thus for which quench detection using voltage taps presents significant risks, consistent with the common belief that the effectiveness of quench detection using voltage taps for superconducting magnets built using high temperature superconductors is seriously compromised by their slow normal zone propagation. This striking difference is ascribed to the fast transverse quench propagation enabled by thin insulation and improved thermal coupling between conductor turns. Finally, this work demonstrates that quench detection for high-temperature superconducting magnets highly depends on the design and construction of the coils such as insulation materials used and this dependence should be factored into the overall magnet design.« less

A Power-Frequency Electric Field Sensor for Portable Measurement

PubMed Central

Xiao, Dongping; Ma, Qichao; Xie, Yutong; Zheng, Qi

2018-01-01

In this paper, a new type of electric field sensor is proposed for the health and safety protection of inspection staff in high-voltage environments. Compared with the traditional power frequency electric field measurement instruments, the portable instrument has some special performance requirements and, thus, a new kind of double spherical shell sensor is presented. First, the mathematical relationships between the induced voltage of the sensor, the output voltage of the measurement circuit, and the original electric field in free space are deduced theoretically. These equations show the principle of the proposed sensor to measure the electric field and the effect factors of the measurement. Next, the characteristics of the sensor are analyzed through simulation. The simulation results are in good agreement with the theoretical analysis. The influencing rules of the size and material of the sensor on the measurement results are summarized. Then, the proposed sensor and the matching measurement system are used in a physical experiment. After calibration, the error of the measurement system is discussed. Lastly, the directional characteristic of the proposed sensor is experimentally tested. PMID:29614753

A Power-Frequency Electric Field Sensor for Portable Measurement.

PubMed

Xiao, Dongping; Ma, Qichao; Xie, Yutong; Zheng, Qi; Zhang, Zhanlong

2018-03-31

In this paper, a new type of electric field sensor is proposed for the health and safety protection of inspection staff in high-voltage environments. Compared with the traditional power frequency electric field measurement instruments, the portable instrument has some special performance requirements and, thus, a new kind of double spherical shell sensor is presented. First, the mathematical relationships between the induced voltage of the sensor, the output voltage of the measurement circuit, and the original electric field in free space are deduced theoretically. These equations show the principle of the proposed sensor to measure the electric field and the effect factors of the measurement. Next, the characteristics of the sensor are analyzed through simulation. The simulation results are in good agreement with the theoretical analysis. The influencing rules of the size and material of the sensor on the measurement results are summarized. Then, the proposed sensor and the matching measurement system are used in a physical experiment. After calibration, the error of the measurement system is discussed. Lastly, the directional characteristic of the proposed sensor is experimentally tested.

Determining the Origin of Half-bandgap-voltage Electroluminescence in Bifunctional Rubrene/C60 Devices

PubMed Central

Chen, Qiusong; Jia, Weiyao; Chen, Lixiang; Yuan, De; Zou, Yue; Xiong, Zuhong

2016-01-01

Lowering the driving voltage of organic light-emitting diodes (OLEDs) is an important approach to reduce their energy consumption. We have fabricated a series of bifunctional devices (OLEDs and photovoltaics) using rubrene and fullerene (C60) as the active layer, in which the electroluminescence threshold voltage(~1.1 V) was half the value of the bandgap of rubrene. Magneto-electroluminescence (MEL) response of planner heterojunction diodes exhibited a small increase in response to a low magnetic field strength (<20 mT); however, a very large decay was observed at a high magnetic field strength (>20 mT). When a hole-transport layer with a low mobility was included in these devices, the MEL response reversed in shape, and simultaneously, the EL threshold voltage became larger than the bandgap voltage. When bulk heterojunction device was examined, the amplitude of MEL curves presented an anomalous voltage-dependence. Following an analysis of the MEL responses of these devices, we proposed that the EL of half-bandgap-voltage device originated from bimolecular triplet-triplet annihilation in the rubrene film, rather than from singlet excitons that formed via an interface auger recombination. This work provides critical insight into the mechanisms of OLED emission and will help advance the applications of bifunctional devices. PMID:27142285

Numerical simulation of operation modes in atmospheric pressure uniform barrier discharge excited by a saw-tooth voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li Xuechen; Niu Dongying; Yin Zengqian

2012-08-15

The characteristics of dielectric barrier discharge excited by a saw-tooth voltage are simulated in atmospheric pressure helium based on a one-dimensional fluid model. A stepped discharge is obtained per half voltage cycle with gas gap width less than 2 mm by the simulation, which is different to the pulsed discharge excited by a sinusoidal voltage. For the stepped discharge, the plateau duration increases with increasing the voltage amplitude and decreasing the gas gap. Therefore, uniform discharge with high temporal duty ratio can be realized with small gap through increasing the voltage amplitude. The maximal densities of both electron and ionmore » appear near the anode and the electric field is almost uniformly distributed along the gap, which indicates that the stepped discharge belongs to a Townsend mode. In contrast to the stepped discharge with small gas gap, a pulsed discharge can be obtained with large gas gap. Through analyzing the spatial density distributions of electron and ion and the electric field, the pulsed discharge is in a glow mode. The voltage-current (V-I) characteristics are analyzed for the above mentioned discharges under different gas gaps, from which the different discharge modes are verified.« less

Breakdown voltage reliability improvement in gas-discharge tube surge protectors employing graphite field emitters

NASA Astrophysics Data System (ADS)

Žumer, Marko; Zajec, Bojan; Rozman, Robert; Nemanič, Vincenc

2012-04-01

Gas-discharge tube (GDT) surge protectors are known for many decades as passive units used in low-voltage telecom networks for protection of electrical components from transient over-voltages (discharging) such as lightning. Unreliability of the mean turn-on DC breakdown voltage and the run-to-run variability has been overcome successfully in the past by adding, for example, a radioactive source inside the tube. Radioisotopes provide a constant low level of free electrons, which trigger the breakdown. In the last decades, any concept using environmentally harmful compounds is not acceptable anymore and new solutions were searched. In our application, a cold field electron emitter source is used as the trigger for the gas discharge but with no activating compound on the two main electrodes. The patent literature describes in details the implementation of the so-called trigger wires (auxiliary electrodes) made of graphite, placed in between the two main electrodes, but no physical explanation has been given yet. We present experimental results, which show that stable cold field electron emission current in the high vacuum range originating from the nano-structured edge of the graphite layer is well correlated to the stable breakdown voltage of the GDT surge protector filled with a mixture of clean gases.

Breakdown Conditioning Chacteristics of Precision-Surface-Treatment-Electrode in Vacuum

NASA Astrophysics Data System (ADS)

Kato, Kastumi; Fukuoka, Yuji; Inagawa, Yukihiko; Saitoh, Hitoshi; Sakaki, Masayuki; Okubo, Hitoshi

Breakdown (BD) characteristics in vacuum are strongly dependent on the electrode surface condition, like the surface roughness etc. Therefore, in order to develop a high voltage vacuum circuit breaker, it is important to optimize the surface treatment process. This paper discusses about the effect of precision-surface-treatment of the electrode on breakdown conditioning characteristics under non-uniform electric field in vacuum. Experimental results reveal that the electrode surface treatment affects the conditioning process, especially the BD voltage and the BD field strength at the initial stage of the conditioning.

Gene delivery by microfluidic flow-through electroporation based on constant DC and AC field.

PubMed

Geng, Tao; Zhan, Yihong; Lu, Chang

2012-01-01

Electroporation is one of the most widely used physical methods to deliver exogenous nucleic acids into cells with high efficiency and low toxicity. Conventional electroporation systems typically require expensive pulse generators to provide short electrical pulses at high voltage. In this work, we demonstrate a flow-through electroporation method for continuous transfection of cells based on disposable chips, a syringe pump, and a low-cost power supply that provides a constant voltage. We successfully transfect cells using either DC or AC voltage with high flow rates (ranging from 40 µl/min to 20 ml/min) and high efficiency (up to 75%). We also enable the entire cell membrane to be uniformly permeabilized and dramatically improve gene delivery by inducing complex migrations of cells during the flow.

Development of a Nanomaterial Anode for a Low-Voltage Proportional Counter for Neutron Detection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Craps, Matthew Greg

NanoTechLabs (NTL) in collaboration with the Savannah River National Laboratory (SRNL) and Clemson University have continued development of a next generation proportional counter (PC) for neutron detection utilizing robust, inexpensive nanostructured anodes while maximizing neutron capture. Neutron detectors are vital to national security as they can be used to detect illicit trafficking of radioactive materials, which could mean the presence of or planning of a dirty bomb attack. Typical PCs operate with high bias potentials that create electronic noise. Incorporating nanomaterials into the anode of PCs can theoretically operate at low voltages (eg. 10-300V) due to an increase in themore » electric field associated with a smaller diameter nano-scale anode. In addition to the lower operating voltage, typical high PC voltages (500-1200V) could be used to generate a larger electric field resulting in more electrons being collected, thus increasing the sensitivity of the PC. Other advantages of nano-PC include reduced platform size, weight, cost, and improved ruggedness. Clemson modeled the electric field around the CNT array tips. NTL grew many ordered CNT arrays as well as control samples and densified the arrays to improve the performance. The primary objective for this work is to provide evidence of a commercially viable technique for reducing the voltage of a parallel plate proportional counter using nanosized anodes. The parallel plate geometry has advantages over the typical cylindrical design based on more feasible placement of solid neutron absorbers and more geometrically practical windows for radiation capture and directional detection.« less

Solid state safety jumper cables

DOEpatents

Kronberg, James W.

1993-01-01

Solid state jumper cables for connecting two batteries in parallel, having two bridge rectifiers for developing a reference voltage, a four-input decoder for determining which terminals are to be connected based on a comparison of the voltage at each of the four terminals to the reference voltage, and a pair of relays for effecting the correct connection depending on the determination of the decoder. No connection will be made unless only one terminal of each battery has a higher voltage than the reference voltage, indicating "positive" terminals, and one has a lower voltage than the reference voltage, indicating "negative" terminals, and that, therefore, the two high voltage terminals may be connected and the two lower voltage terminals may be connected. Current flows once the appropriate relay device is closed. The relay device is preferably a MOSFET (metal oxide semiconductor field effect transistor) combined with a series array of photodiodes that develop MOSFET gate-closing potential when the decoder output causes an LED to light.

Solid state safety jumper cables

DOEpatents

Kronberg, J.W.

1993-02-23

Solid state jumper cables for connecting two batteries in parallel, having two bridge rectifiers for developing a reference voltage, a four-input decoder for determining which terminals are to be connected based on a comparison of the voltage at each of the four terminals to the reference voltage, and a pair of relays for effecting the correct connection depending on the determination of the decoder. No connection will be made unless only one terminal of each battery has a higher voltage than the reference voltage, indicating positive'' terminals, and one has a lower voltage than the reference voltage, indicating negative'' terminals, and that, therefore, the two high voltage terminals may be connected and the two lower voltage terminals may be connected. Current flows once the appropriate relay device is closed. The relay device is preferably a MOSFET (metal oxide semiconductor field effect transistor) combined with a series array of photodiodes that develop MOSFET gate-closing potential when the decoder output causes an LED to light.

Gas Composition Sensing Using Carbon Nanotube Arrays

NASA Technical Reports Server (NTRS)

Li, Jing; Meyyappan, Meyya

2012-01-01

This innovation is a lightweight, small sensor for inert gases that consumes a relatively small amount of power and provides measurements that are as accurate as conventional approaches. The sensing approach is based on generating an electrical discharge and measuring the specific gas breakdown voltage associated with each gas present in a sample. An array of carbon nanotubes (CNTs) in a substrate is connected to a variable-pulse voltage source. The CNT tips are spaced appropriately from the second electrode maintained at a constant voltage. A sequence of voltage pulses is applied and a pulse discharge breakdown threshold voltage is estimated for one or more gas components, from an analysis of the current-voltage characteristics. Each estimated pulse discharge breakdown threshold voltage is compared with known threshold voltages for candidate gas components to estimate whether at least one candidate gas component is present in the gas. The procedure can be repeated at higher pulse voltages to estimate a pulse discharge breakdown threshold voltage for a second component present in the gas. The CNTs in the gas sensor have a sharp (low radius of curvature) tip; they are preferably multi-wall carbon nanotubes (MWCNTs) or carbon nanofibers (CNFs), to generate high-strength electrical fields adjacent to the tips for breakdown of the gas components with lower voltage application and generation of high current. The sensor system can provide a high-sensitivity, low-power-consumption tool that is very specific for identification of one or more gas components. The sensor can be multiplexed to measure current from multiple CNT arrays for simultaneous detection of several gas components.

High-voltage positive electrode materials for lithium-ion batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Wangda; Song, Bohang; Manthiram, Arumugam

The ever-growing demand for advanced rechargeable lithium-ion batteries in portable electronics and electric vehicles has spurred intensive research efforts over the past decade. The key to sustaining the progress in Li-ion batteries lies in the quest for safe, low-cost positive electrode (cathode) materials with desirable energy and power capabilities. One approach to boost the energy and power densities of batteries is to increase the output voltage while maintaining a high capacity, fast charge–discharge rate, and long service life. Here, this review gives an account of the various emerging high-voltage positive electrode materials that have the potential to satisfy these requirementsmore » either in the short or long term, including nickel-rich layered oxides, lithium-rich layered oxides, high-voltage spinel oxides, and high-voltage polyanionic compounds. The key barriers and the corresponding strategies for the practical viability of these cathode materials are discussed along with the optimization of electrolytes and other cell components, with a particular emphasis on recent advances in the literature. Finally, a concise perspective with respect to plausible strategies for future developments in the field is also provided.« less

High-voltage positive electrode materials for lithium-ion batteries

DOE PAGES

Li, Wangda; Song, Bohang; Manthiram, Arumugam

2017-04-25

The ever-growing demand for advanced rechargeable lithium-ion batteries in portable electronics and electric vehicles has spurred intensive research efforts over the past decade. The key to sustaining the progress in Li-ion batteries lies in the quest for safe, low-cost positive electrode (cathode) materials with desirable energy and power capabilities. One approach to boost the energy and power densities of batteries is to increase the output voltage while maintaining a high capacity, fast charge–discharge rate, and long service life. Here, this review gives an account of the various emerging high-voltage positive electrode materials that have the potential to satisfy these requirementsmore » either in the short or long term, including nickel-rich layered oxides, lithium-rich layered oxides, high-voltage spinel oxides, and high-voltage polyanionic compounds. The key barriers and the corresponding strategies for the practical viability of these cathode materials are discussed along with the optimization of electrolytes and other cell components, with a particular emphasis on recent advances in the literature. Finally, a concise perspective with respect to plausible strategies for future developments in the field is also provided.« less

A Bright and Fast Red Fluorescent Protein Voltage Indicator That Reports Neuronal Activity in Organotypic Brain Slices

PubMed Central

Abdelfattah, Ahmed S.; Farhi, Samouil L.; Zhao, Yongxin; Brinks, Daan; Zou, Peng; Ruangkittisakul, Araya; Platisa, Jelena; Pieribone, Vincent A.; Ballanyi, Klaus; Cohen, Adam E.

2016-01-01

Optical imaging of voltage indicators based on green fluorescent proteins (FPs) or archaerhodopsin has emerged as a powerful approach for detecting the activity of many individual neurons with high spatial and temporal resolution. Relative to green FP-based voltage indicators, a bright red-shifted FP-based voltage indicator has the intrinsic advantages of lower phototoxicity, lower autofluorescent background, and compatibility with blue-light-excitable channelrhodopsins. Here, we report a bright red fluorescent voltage indicator (fluorescent indicator for voltage imaging red; FlicR1) with properties that are comparable to the best available green indicators. To develop FlicR1, we used directed protein evolution and rational engineering to screen libraries of thousands of variants. FlicR1 faithfully reports single action potentials (∼3% ΔF/F) and tracks electrically driven voltage oscillations at 100 Hz in dissociated Sprague Dawley rat hippocampal neurons in single trial recordings. Furthermore, FlicR1 can be easily imaged with wide-field fluorescence microscopy. We demonstrate that FlicR1 can be used in conjunction with a blue-shifted channelrhodopsin for all-optical electrophysiology, although blue light photoactivation of the FlicR1 chromophore presents a challenge for applications that require spatially overlapping yellow and blue excitation. SIGNIFICANCE STATEMENT Fluorescent-protein-based voltage indicators enable imaging of the electrical activity of many genetically targeted neurons with high spatial and temporal resolution. Here, we describe the engineering of a bright red fluorescent protein-based voltage indicator designated as FlicR1 (fluorescent indicator for voltage imaging red). FlicR1 has sufficient speed and sensitivity to report single action potentials and voltage fluctuations at frequencies up to 100 Hz in single-trial recordings with wide-field microscopy. Because it is excitable with yellow light, FlicR1 can be used in conjunction with blue-light-activated optogenetic actuators. However, spatially distinct patterns of optogenetic activation and voltage imaging are required to avoid fluorescence artifacts due to photoactivation of the FlicR1 chromophore. PMID:26911693

Active Piezoelectric Diaphragms

NASA Technical Reports Server (NTRS)

Bryant, Robert G.; Effinger, Robert T., IV; Aranda, Isaiah, Jr.; Copeland, Ben M.; Covington, Ed W., III

2002-01-01

Several active piezoelectric diaphragms were fabricated by placing unelectroded piezoelectric disks between copper clad films patterned with Inter-Circulating Electrodes "ICE". When a voltage potential is applied to the electrodes, the result is radially distributed electric field that mechanically strains the piezo-ceramic along the Z-axis (perpendicular to the applied electric field), rather than the expected in-plane (XY-axis) direction. Unlike other out of plane piezoelectric actuators, which are benders, these Radial Field Diaphragms (RFDs) strain concentrically yet afford high displacements while maintaining a constant circumference. This paper covers the fabrication and characterization of these diaphragms as a function of poling field strength, ceramic diameter and line spacing, as well as the surface topography, the resulting strain field and displacement as a function of applied voltage ranging from DC to 10 Hz.

Mechanism of Small Current Generation under Impulse Voltage Applications in Vacuum

NASA Astrophysics Data System (ADS)

Aoki, Keita; Yasukawa, Hideaki; Kojima, Hiroki; Homma, Mitsutaka; Shioiri, Tetsu; Okubo, Hitoshi

Small discharge not to accompany breakdown can occur under high electric field in vacuum, however the mechanism is not well clarified. We have found that the current of small discharge decreases with repeated voltage applications, and leads to electrode conditioning effect of raising withstand voltage. The inception of the current is delayed with the decrease of current, and the inception time and waveform change by gap length. On the other hand, under low vacuum condition, the current increases and reaches saturation with repeated voltage applications. From these discussions, we concluded that the generating process of small current depended on the adsorption and absorption gas of electrodes.

Current-voltage characteristics of C70 solid near Meyer-Neldel temperature

NASA Astrophysics Data System (ADS)

Onishi, Koichi; Sezaimaru, Kouki; Nakashima, Fumihiro; Sun, Yong; Kirimoto, Kenta; Sakaino, Masamichi; Kanemitsu, Shigeru

2017-06-01

The current-voltage characteristics of the C70 solid with hexagonal closed-packed structures were measured in the temperature range of 250-450 K. The current-voltage characteristics can be described as a temporary expedient by a cubic polynomial of the voltage, i = a v 3 + b v 2 + c v + d . Moreover, the Meyer-Neldel temperature of the C70 solid was confirmed to be 310 K, at which a linear relationship between the current and voltage was observed. Also, at temperatures below the Meyer-Neldel temperature, the current increases with increasing voltage. On the other hand, at temperatures above the Meyer-Neldel temperature a negative differential conductivity effect was observed at high voltage side. The negative differential conductivity was related to the electric field and temperature effects on the mobility of charge carrier, which involve two variations in the carrier concentration and the activation energy for carrier hopping transport.

Electrical injuries in urban children in New Delhi.

PubMed

Rai, Ashish; Khalil, Sumaira; Batra, Prerna; Gupta, Saurabh Kumar; Bhattacharya, Sameek; Dubey, Nand K; Mehra, Neha; Saha, Abhijeet

2013-03-01

The objective of this study was to analyze the epidemiology, presentation, management, and complications of electrical burn injuries in urban children. Data from records and clinical data were collected retrospectively and prospectively during 2008 to 2010. Of 41 children enrolled, the mean age of children enrolled was 8.1 ± 4.5 years. Low-voltage injury was seen in 28 (68.2%), and 13 (31.8%) had high-voltage injuries. Low-voltage injuries were most commonly (52.45%) secondary to direct contact with live wire, whereas high-voltage injuries in 70% were due to direct contact with broken wires lying in fields/rooftops. Fourteen children of the 41 enrolled had associated injuries. Low-voltage injuries were associated with minor burns, seizures, tibial fracture, eyelid burn, scalp hematoma, and speech and visual impairment, whereas high-voltage injuries were associated with cardiac arrest, extradural hematoma, visceral burns, pulmonary hemorrhage and hypoxic encephalopathy, and postelectrocution acute respiratory distress syndrome. Surgical interventions done included split-thickness skin grafting, fasciotomy, and amputation procedures. The mean duration of hospital stay of all the children enrolled was 9.02 days with 35 children discharged, 71.4% of them having low-voltage injuries. Four children died, 75% of them having high-voltage injury, whereas 2 children left without medical advice, both having low-voltage injuries. Children are a major group susceptible to electrical injuries in our country. Most of the mechanisms leading to them are easily preventable, but occur because of lack or awareness among the children and their guardians. Burn prevention program should be implemented incorporating these epidemiological data.

Increased exposure to pollutant aerosols under high voltage power lines.

PubMed

Fews, A P; Henshaw, D L; Keitch, P A; Close, J J; Wilding, R J

1999-12-01

To assess increased exposure to airborne pollutants near power lines by investigating theoretically and experimentally the behaviour of 222Rn decay product marker aerosols in the 50 Hz electric field under power lines. The behaviour of aerosols in outdoor air including those carrying 222Rn decay products was modelled theoretically in the presence of an AC field. TASTRAK alpha-particle spectroscopy was used to characterize 218Po and 214Po aerosols outdoors. Sampling points were chosen along a line at right angles up to 200 m from a number of high voltage power (transmission) lines. Each sampling point comprised an arrangement of mutually orthogonal TASTRAK detectors. Exposures were carried out at different power line locations in various weather conditions. The model predicts a two- to three-fold increase in deposition of aerosols on spherical surfaces mimicking the human head under high voltage power lines. Experimental measurements using detectors mounted on grounded metal spheres showed an enhanced deposition of both 218Po and 214Po aerosols. Enhanced 218Po deposition on 400 kV lines ranged from 1.96+/-0.15 to 2.86+/-0.32. Enhanced 214Po deposition on 275 kV and 132 kV lines were 1.43+/-0.07 and 1.11+/-0.21, respectively, where the latter value was not significant. The observations demonstrate a mode of increased exposure to pollutant aerosols under high voltage power lines by increased deposition on the body. The total (indoor + outdoor) 218Po and 214Po dose to the basal layer of facial skin is estimated to be increased by between 1.2 and 2.0 for 10% of time spent outdoors under high voltage power lines.

Magneto-acousto-electrical tomography: a potential method for imaging current density and electrical impedance.

PubMed

Haider, S; Hrbek, A; Xu, Y

2008-06-01

Primarily this report outlines our investigation on utilizing magneto-acousto-electrical-tomography (MAET) to image the lead field current density in volume conductors. A lead field current density distribution is obtained when a current/voltage source is applied to a sample via a pair of electrodes. This is the first time a high-spatial-resolution image of current density is presented using MAET. We also compare an experimental image of current density in a sample with its corresponding numerical simulation. To image the lead field current density, rather than applying a current/voltage source directly to the sample, we place the sample in a static magnetic field and focus an ultrasonic pulse on the sample to simulate a point-like current dipole source at the focal point. Then by using electrodes we measure the voltage/current signal which, based on the reciprocity theorem, is proportional to a component of the lead field current density. In the theory section, we derive the equation relating the measured voltage to the lead field current density and the displacement velocity caused by ultrasound. The experimental data include the MAET signal and an image of the lead field current density for a thin sample. In addition, we discuss the potential improvements for MAET especially to overcome the limitation created by the observation that no signal was detected from the interior of a region having a uniform conductivity. As an auxiliary we offer a mathematical formula whereby the lead field current density may be utilized to reconstruct the distribution of the electrical impedance in a piecewise smooth object.

Multiloop Rapid-Rise/Rapid Fall High-Voltage Power Supply

NASA Technical Reports Server (NTRS)

Bearden, Douglas

2007-01-01

A proposed multiloop power supply would generate a potential as high as 1.25 kV with rise and fall times <100 s. This power supply would, moreover, be programmable to generate output potentials from 20 to 1,250 V and would be capable of supplying a current of at least 300 A at 1,250 V. This power supply is intended to be a means of electronic shuttering of a microchannel plate that would be used to intensify the output of a charge-coupled-device imager to obtain exposure times as short as 1 ms. The basic design of this power supply could also be adapted to other applications in which high voltages and high slew rates are needed. At the time of reporting the information for this article, there was no commercially available power supply capable of satisfying the stated combination of voltage, rise-time, and fall-time requirements. The power supply would include a preregulator that would be used to program a voltage 1/30 of the desired output voltage. By means of a circuit that would include a pulse-width modulator (PWM), two voltage doublers, and a transformer having two primary and two secondary windings, the preregulator output voltage would be amplified by a factor of 30. A resistor would limit the current by controlling a drive voltage applied to field-effect transistors (FETs) during turn-on of the PWM. Two feedback loops would be used to regulate the high output voltage. A pulse transformer would be used to turn on four FETs to short-circuit output capacitors when the outputs of the PWM were disabled. Application of a 0-to-5-V square to a PWM shut-down pin would cause a 20-to-1,250-V square wave to appear at the output.

Recent advances of high voltage AlGaN/GaN power HFETs

NASA Astrophysics Data System (ADS)

Uemoto, Yasuhiro; Ueda, Tetsuzo; Tanaka, Tsuyoshi; Ueda, Daisuke

2009-02-01

We review our recent advances of GaN-based high voltage power transistors. These are promising owing to low on-state resistance and high breakdown voltage taking advantages of superior material properties. However, there still remain a couple of technical issues to be solved for the GaN devices to replace the existing Si-based power devices. The most critical issue is to achieve normally-off operation which is strongly desired for the safety operation, however, it has been very difficult because of the built-in polarization electric field. Our new device called GIT (Gate Injection Transistor) utilizing conductivity modulation successfully achieves the normally-off operation keeping low on-state resistance. The fabricated GIT on a Si substrate exhibits threshold voltage of +1.0V. The obtained on-state resistance and off-state breakdown voltage were 2.6mΩ•cm2 and 800V, respectively. Remaining technical issue is to further increase the breakdown voltage. So far, the reported highest off-state breakdown voltage of AlGaN/GaN HFETs has been 1900V. Overcoming these issues by a novel device structure, we have demonstrated the world highest breakdown voltages of 10400V using thick poly-crystalline AlN as a passivation film and Via-holes through sapphire which enable very efficient layout of the lateral HFET array avoiding any undesired breakdown of passivation films. Since conventional wet or dry etching cannot be used for chemically stable sapphire, high power pulsed laser is used to form the via-holes. The presented GaN power devices demonstrate that GaN is advantageous for high voltage power switching applications replacing currently used Si-based power MOSFETs and IGBTs.

A microfluidic flow-through device for high throughput electrical lysis of bacterial cells based on continuous dc voltage.

PubMed

Wang, Hsiang-Yu; Bhunia, Arun K; Lu, Chang

2006-12-15

Interest in electrical lysis of biological cells on a microfludic platform has increased because it allows for the rapid recovery of intracellular contents without introducing lytic agents. In this study we demonstrated a simple microfluidic flow-through device which lysed Escherichia coli cells under a continuous dc voltage. The E. coli cells had previously been modified to express green fluorescent protein (GFP). In our design, the cell lysis only happened in a defined section of a microfluidic channel due to the local field amplification by geometric modification. The geometric modification also effectively decreased the required voltage for lysis by several folds. We found that local field strength of 1000-1500 V/cm was required for nearly 100% cell death. This threshold field strength was considerably lower than the value reported in the literature, possibly due to the longer duration of the field [Lee, S.W., Tai, Y.C., 1999. Sens. Actuators A: Phys. 73, 74-79]. Cell lysis was detected by both plate count and fluorescence spectroscopy. The cell membrane was completely disintegrated in the lysis section of the microfluidic device, when the field strength was higher than 2000 V/cm. The devices were fabricated using low-cost soft lithography with channel widths considerably larger than the cell size to avoid clogging and ensure stable performance. Our tool will be ideal for high throughput processing of bacterial cells for chemical analysis of intracellular contents such as DNA and proteins. The application of continuous dc voltage greatly simplified the instrumentation compared to devices using electrical pulses for similar purposes. In principle, the same approach can also be applied for lysis of mammalian cells and electroporative transfection.

A 70 kV solid-state high voltage pulse generator based on saturable pulse transformer.

PubMed

Fan, Xuliang; Liu, Jinliang

2014-02-01

High voltage pulse generators are widely applied in many fields. In recent years, solid-state and operating at repetitive mode are the most important developing trends of high voltage pulse generators. A solid-state high voltage pulse generator based on saturable pulse transformer is proposed in this paper. The proposed generator is consisted of three parts. They are charging system, triggering system, and the major loop. Saturable pulse transformer is the key component of the whole generator, which acts as a step-up transformer and main switch during working process of this generator. The circuit and working principles of the proposed pulse generator are introduced first in this paper, and the saturable pulse transformer used in this generator is introduced in detail. Circuit of the major loop is simulated to verify the design of the system. Demonstration experiments are carried out, and the results show that when the primary energy storage capacitor is charged to a high voltage, such as 2.5 kV, a voltage with amplitude of 86 kV can be achieved on the secondary winding. The magnetic core of saturable pulse transformer is saturated deeply and the saturable inductance of the secondary windings is very small. The switch function of the saturable pulse transformer can be realized ideally. Therefore, a 71 kV output voltage pulse is formed on the load. Moreover, the magnetic core of the saturable pulse transformer can be reset automatically.

Experimental validation of prototype high voltage bushing

NASA Astrophysics Data System (ADS)

Shah, Sejal; Tyagi, H.; Sharma, D.; Parmar, D.; M. N., Vishnudev; Joshi, K.; Patel, K.; Yadav, A.; Patel, R.; Bandyopadhyay, M.; Rotti, C.; Chakraborty, A.

2017-08-01

Prototype High voltage bushing (PHVB) is a scaled down configuration of DNB High Voltage Bushing (HVB) of ITER. It is designed for operation at 50 kV DC to ensure operational performance and thereby confirming the design configuration of DNB HVB. Two concentric insulators viz. Ceramic and Fiber reinforced polymer (FRP) rings are used as double layered vacuum boundary for 50 kV isolation between grounded and high voltage flanges. Stress shields are designed for smooth electric field distribution. During ceramic to Kovar brazing, spilling cannot be controlled which may lead to high localized electrostatic stress. To understand spilling phenomenon and precise stress calculation, quantitative analysis was performed using Scanning Electron Microscopy (SEM) of brazed sample and similar configuration modeled while performing the Finite Element (FE) analysis. FE analysis of PHVB is performed to find out electrical stresses on different areas of PHVB and are maintained similar to DNB HV Bushing. With this configuration, the experiment is performed considering ITER like vacuum and electrical parameters. Initial HV test is performed by temporary vacuum sealing arrangements using gaskets/O-rings at both ends in order to achieve desired vacuum and keep the system maintainable. During validation test, 50 kV voltage withstand is performed for one hour. Voltage withstand test for 60 kV DC (20% higher rated voltage) have also been performed without any breakdown. Successful operation of PHVB confirms the design of DNB HV Bushing. In this paper, configuration of PHVB with experimental validation data is presented.

Study of DC Circuit Breaker of H2-N2 Mixture Gas for High Voltage

NASA Astrophysics Data System (ADS)

Shiba, Yuji; Morishita, Yukinaga; Kaneko, Shuhei; Okabe, Shigemitsu; Mizoguchi, Hitoshi; Yanabu, Satoru

Global warming caused by CO2 etc. is a field where the concern is very high. Especially, automobile emissions are problem for it. Therefore, the hybrid car is widely development and used recently. Hybrid car used electric power and gasoline. So, the car reduces CO2. Hybrid car has engine and motor. To rotate the motor, hybrid car has battery. This battery is large capacity. Therefore, the relay should interrupt high DC current for the switch of the motor and the engine. So, hybrid car used hydrogen gas filling relay We studied interruption test for the research of a basic characteristic of hydrogen gas. DC current has not current zero point. So, it is necessary to make the current zero by high arc voltage and forcible current zero point. The loss coefficient and arc voltage of hydrogen is high. Therefore, we studied interruption test for used high arc voltage. We studied interruption test and dielectric breakdown test of air, pure Hydrogen, and Hydrogen- nitrogen mixture gas. As a result, we realized H2-N2(80%-20%) is the best gas.

The investigation of an electric arc in the long cylindrical channel of the powerful high-voltage AC plasma torch

NASA Astrophysics Data System (ADS)

Rutberg, Ph G.; Popov, S. D.; Surov, A. V.; Serba, E. O.; Nakonechny, Gh V.; Spodobin, V. A.; Pavlov, A. V.; Surov, A. V.

2012-12-01

The comparison of conductivity obtained in experiments with calculated values is made in this paper. Powerful stationary plasma torches with prolonged period of continuous work are popular for modern plasmachemical applications. The maximum electrode lifetime with the minimum erosion can be reached while working on rather low currents. Meanwhile it is required to provide voltage arc drop for the high power achievement. Electric field strength in the arc column of the high-voltage plasma torch, using air as a plasma-forming gas, does not exceed 15 V/cm. It is possible to obtain the high voltage drop in the long arc stabilized in the channel by the intensive gas flow under given conditions. Models of high voltage plasma torches with rod electrodes with power up to 50 kW have been developed and investigated. The plasma torch arcs are burning in cylindrical channels. Present investigations are directed at studying the possibility of developing long arc plasma torches with higher power. The advantage of AC power supplies usage is the possibility of the loss minimization due to the reactive power compensation. The theoretical maximum of voltage arc drop for power supplies with inductive current limitations is about 50 % of the no-load voltage for a single-phase circuit and about 30 % for the three-phase circuit. Burning of intensively blown arcs in the long cylindrical channel using the AC power supply with 10 kV no-load voltage is experimentally investigated in the work. Voltage drops close to the maximum possible had been reached in the examined arcs in single-phase and three-phase modes. Operating parameters for single-phase mode were: current -30 A, voltage drop -5 kV, air flow rate 35 g/s; for three-phase mode: current (40-85) A, voltage drop (2.5-3.2) kV, air flow rate (60-100) g/s. Arc length in the installations exceeded 2 m.

A High Voltage Asymmetric Waveform Generator for FAIMS

PubMed Central

Canterbury, Jesse D.; Gladden, James; Buck, Lon; Olund, Roy; MacCoss, Michael J.

2010-01-01

High field asymmetric waveform ion mobility spectrometry (FAIMS) has been used increasingly in recent years as an additional method of ion separation and selection prior to mass spectrometry. The FAIMS electrodes are relatively simple to design and fabricate for laboratories wishing to implement their own FAIMS designs. However, construction of the electronics apparatus needed to produce the required high magnitude asymmetric electric field oscillating at a frequency of several hundred kilohertz is not trivial. Here we present an entirely custom-built electronics setup capable of supplying the required waveforms and voltages. The apparatus is relatively simple and inexpensive to implement. We also present data acquired on this system demonstrating the use of FAIMS as a gas phase ion filter interface to an ion trap mass spectrometer. PMID:20332067

Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grezes, C.; Alzate, J. G.; Cai, X.

2016-01-04

We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memorymore » and logic integrated circuits.« less

Energy-Saving Inverter

NASA Technical Reports Server (NTRS)

Rippel, W. E.; Edwards, D. B.

1984-01-01

Commutation by field-effect transistor allows more efficient operation. High voltage field-effect transistor (FET) controls silicon controlled rectifiers (SCR's). Circuit requires only one capacitor and one inductor in commutation circuit: simpler, more efficient, and more economical than conventional inverters. Adaptable to dc-to-dc converters.

High performance low voltage organic field effect transistors on plastic substrate for amplifier circuits

NASA Astrophysics Data System (ADS)

Houin, G.; Duez, F.; Garcia, L.; Cantatore, E.; Torricelli, F.; Hirsch, L.; Belot, D.; Pellet, C.; Abbas, M.

2016-09-01

The high performance air stable organic semiconductor small molecule dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) was chosen as active layer for field effect transistors built to realize flexible amplifier circuits. Initial device on rigid Si/SiO2 substrate showed appreciable performance with hysteresis-free characteristics. A number of approaches were applied to simplify the process, improve device performance and decrease the operating voltage: they include an oxide interfacial layer to decrease contact resistance; a polymer passivation layer to optimize semiconductor/dielectric interface and an anodized high-k oxide as dielectric layer for low voltage operation. The devices fabricated on plastic substrate yielded excellent electrical characteristics, showing mobility of 1.6 cm2/Vs, lack of hysteresis, operation below 5 V and on/off current ratio above 105. An OFET model based on variable ranging hopping theory was used to extract the relevant parameters from the transfer and output characteristics, which enabled us to simulate our devices achieving reasonable agreement with the measurements

Magnetic force driven magnetoelectric effect in bi-cantilever composites

NASA Astrophysics Data System (ADS)

Zhang, Ru; Wu, Gaojian; Zhang, Ning

2017-12-01

The magnetic force driven magnetoelectric (ME) effect in bi-cantilever Mn-Zn-Ferrite /PZT composites is presented. Compared with single cantilever, the ME voltage coefficient in bi-cantilever composite is a little lower and the resonance frequency is higher, but the bi-cantilever structure is advantageous for integration. When the magnetic gap is 3 mm, the ME voltage coefficient can achieve 6.2 Vcm-1Oe-1 at resonance under optimum bias field Hm=1030 Oe; when the magnetic gap is 1.5 mm, the ME voltage coefficient can get the value as high as 4.4 Vcm-1Oe-1 under much lower bias field H=340 Oe. The stable ME effect in bi-cantilever composites has important potential application in the design of new type ME device.

Annealing effects on hydrogenated diamond NOR logic circuits

NASA Astrophysics Data System (ADS)

Liu, J. W.; Oosato, H.; Liao, M. Y.; Imura, M.; Watanabe, E.; Koide, Y.

2018-04-01

Here, hydrogenated diamond (H-diamond) NOR logic circuits composed of two p-type enhancement-mode (E-mode) metal-oxide-semiconductor field-effect-transistors (MOSFETs) and a load resistor are fabricated and characterized. The fabrication process and the annealing effect on the electrical properties of the NOR logic circuit are demonstrated. There are distinct logical characteristics for the as-received and 300 °C annealed NOR logic circuits. When one or both input voltages for the E-mode MOSFETs are -10.0 V and "high" signals, output voltages respond 0 V and "low" signals. Instead, when both input voltages are 0 V and "low" signals, output voltage responds -10.0 V and a "high" signal. After annealing at 400 °C, the NOR logical characteristics are damaged, which is possibly attributed to the degradation of the H-diamond MOSFETs.

Voltage-Gated Potassium Channels: A Structural Examination of Selectivity and Gating

PubMed Central

Kim, Dorothy M.; Nimigean, Crina M.

2016-01-01

Voltage-gated potassium channels play a fundamental role in the generation and propagation of the action potential. The discovery of these channels began with predictions made by early pioneers, and has culminated in their extensive functional and structural characterization by electrophysiological, spectroscopic, and crystallographic studies. With the aid of a variety of crystal structures of these channels, a highly detailed picture emerges of how the voltage-sensing domain reports changes in the membrane electric field and couples this to conformational changes in the activation gate. In addition, high-resolution structural and functional studies of K+ channel pores, such as KcsA and MthK, offer a comprehensive picture on how selectivity is achieved in K+ channels. Here, we illustrate the remarkable features of voltage-gated potassium channels and explain the mechanisms used by these machines with experimental data. PMID:27141052

Nanostructural evolution during emission of CsI-coated carbon fiber cathodes

NASA Astrophysics Data System (ADS)

Drummy, Lawrence F.; Apt, Scott; Shiffler, Don; Golby, Ken; LaCour, Matt; Maruyama, Benji; Vaia, Richard A.

2010-06-01

Carbon-based nanofiber and microfiber cathodes exhibit very low voltages for the onset of electron emission, and thus provide exciting opportunities for applications ranging from high power microwave sources to field emission displays. CsI coatings have been experimentally shown to lower the work function for emission from the fiber tips, although little is known about the microstructure of the fibers themselves in their as-received state, after coating with CsI, or after being subjected to high voltage cycling. Longitudinal cross sections of the original, unused CsI-coated fibers produced by focused ion beam lift-out revealed a nanostructured graphitic core surrounded by an amorphous carbon shell with submicron sized islands of crystalline CsI on the outer surface. Aberration-corrected high resolution electron microscopy (HREM) of the fiber core achieved 0.10 nm resolution, with the graphite (200) clearly visible in digital fast Fourier transformations of the 2-4 nm highly ordered graphitic domains. As the cathode fibers are cycled at high voltage, HREM demonstrates that the graphitic ordering of the core increases with the number of cycles, however the structure and thickness of the amorphous carbon layer remains unchanged. These results are consistent with micro-Raman measurements of the fiber disordered/graphitic (D/G) band ratios. After high voltage cycling, a uniform ˜100 nm film at the fiber tip was evident in both bright field transmission electron microscopy (TEM) and high angle annular dark field scanning TEM (STEM). Low-dose electron diffraction techniques confirmed the amorphous nature of this film, and STEM with elemental mapping via x-ray energy dispersive spectroscopy indicates this layer is composed of CsIO. The oxidative evolution of tip composition and morphology due to impurities in the chamber, along with increased graphitization of the fiber core, contributes to changes in emission behavior with cycling.

High-voltage electric-field-induced growth of aligned ``cow-nipple-like'' submicro-nano carbon isomeric structure via chemical vapor deposition

NASA Astrophysics Data System (ADS)

Liao, Chengwei; Zhang, Yupeng; Pan, Chunxu

2012-12-01

In this study, a novel vertically aligned carbon material, named "cow-nipple-like" submicro-nano carbon isomeric structure, was synthesized by the thermal decomposition of C2H2 in a chemical-vapor deposition system with a high-voltage external electric field. The microstructures were characterized by using scanning electron microscopy, high-resolution transmission electron microscopy, and Raman spectroscopy, respectively. The results revealed that (1) the total height of the carbon isomeric structure was in a rang of 90-250 nm; (2) the carbon isomeric structure consisted of a submicro- or nano-sized hemisphere carbon ball with 30-120 nm in diameter at the bottom and a vertically grown carbon nanotube with 10-40 nm in diameter upon the carbon ball; (3) there was a sudden change in diameter at the junction of the carbon ball and carbon nanotube. In addition, the carbon isomeric structure showed an excellent controllability, that is, the density, height, and diameter could be controlled effectively by adjusting the precursor ferrocene concentration in the catalytic solution and C2H2 ventilation time. A possible growth model was proposed to describe the formation mechanism, and a theoretic calculation was carried out to discuss the effect of high-voltage electric field upon the growth of the carbon isomeric structure.

Low-Voltage InGaZnO Thin Film Transistors with Small Sub-Threshold Swing.

PubMed

Cheng, C H; Chou, K I; Hsu, H H

2015-02-01

We demonstrate a low-voltage driven, indium-gallium-zinc oxide thin-film transistor using high-κ LaAlO3 gate dielectric. A low VT of 0.42 V, very small sub-threshold swing of 68 mV/dec, field-effect mobility of 4.1 cm2/Ns and low operation voltage of 1.4 V were reached simultaneously in LaAlO3/IGZO TFT device. This low-power and small SS TFT has the potential for fast switching speed and low power applications.

Simulation of temperature field for temperature-controlled radio frequency ablation using a hyperbolic bioheat equation and temperature-varied voltage calibration: a liver-mimicking phantom study.

PubMed

Zhang, Man; Zhou, Zhuhuang; Wu, Shuicai; Lin, Lan; Gao, Hongjian; Feng, Yusheng

2015-12-21

This study aims at improving the accuracy of temperature simulation for temperature-controlled radio frequency ablation (RFA). We proposed a new voltage-calibration method in the simulation and investigated the feasibility of a hyperbolic bioheat equation (HBE) in the RFA simulation with longer durations and higher power. A total of 40 RFA experiments was conducted in a liver-mimicking phantom. Four mathematical models with multipolar electrodes were developed by the finite element method in COMSOL software: HBE with/without voltage calibration, and the Pennes bioheat equation (PBE) with/without voltage calibration. The temperature-varied voltage calibration used in the simulation was calculated from an experimental power output and temperature-dependent resistance of liver tissue. We employed the HBE in simulation by considering the delay time τ of 16 s. First, for simulations by each kind of bioheat equation (PBE or HBE), we compared the differences between the temperature-varied voltage-calibration and the fixed-voltage values used in the simulations. Then, the comparisons were conducted between the PBE and the HBE in the simulations with temperature-varied voltage calibration. We verified the simulation results by experimental temperature measurements on nine specific points of the tissue phantom. The results showed that: (1) the proposed voltage-calibration method improved the simulation accuracy of temperature-controlled RFA for both the PBE and the HBE, and (2) for temperature-controlled RFA simulation with the temperature-varied voltage calibration, the HBE method was 0.55 °C more accurate than the PBE method. The proposed temperature-varied voltage calibration may be useful in temperature field simulations of temperature-controlled RFA. Besides, the HBE may be used as an alternative in the simulation of long-duration high-power RFA.

1-kV vertical Ga2O3 field-plated Schottky barrier diodes

NASA Astrophysics Data System (ADS)

Konishi, Keita; Goto, Ken; Murakami, Hisashi; Kumagai, Yoshinao; Kuramata, Akito; Yamakoshi, Shigenobu; Higashiwaki, Masataka

2017-03-01

Ga2O3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n--Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+-Ga2O3 (001) substrate. The specific on-resistance of the Ga2O3 FP-SBD was estimated to be 5.1 mΩ.cm2. Successful field-plate engineering resulted in a high breakdown voltage of 1076 V. A larger-than-expected effective barrier height of 1.46 eV, which was extracted from the temperature-dependent current-voltage characteristics, could be caused by the effect of fluorine atoms delivered in a hydrofluoric acid solution process.

Effect of the change in the load resistance on the high voltage pulse transformer of the intense electron-beam accelerators.

PubMed

Cheng, Xin-bing; Liu, Jin-liang; Qian, Bao-liang; Zhang, Yu; Zhang, Hong-bo

2009-11-01

A high voltage pulse transformer (HVPT) is usually used as a charging device for the pulse forming line (PFL) of intense electron-beam accelerators (IEBAs). Insulation of the HVPT is one of the important factors that restrict the development of the HVPT. Until now, considerable effort has been focused on minimizing high field regions to avoid insulation breakdown between windings. Characteristics of the HVPT have been widely discussed to achieve these goals, but the effects of the PFL and load resistance on HVPT are usually neglected. In this paper, a HVPT is used as a charging device for the PFL of an IEBA and the effect of the change in the load resistance on the HVPT of the IEBA is presented. When the load resistance does not match the wave impedance of the PFL, a high-frequency bipolar oscillating voltage will occur, and the amplitude of the oscillating voltage will increase with the decrease in the load resistance. The load resistance approximates to zero and the amplitude of the oscillating voltage is much higher. This makes it easier for surface flashover along the insulation materials to form and decrease the lifetime of the HVPT.

Performance of a 100V Half-Bridge MOSFET Driver, Type MIC4103, Over a Wide Temperature Range

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad

2011-01-01

The operation of a high frequency, high voltage MOSFET (metal-oxide semiconductor field-effect transistors) driver was investigated over a wide temperature regime that extended beyond its specified range. The Micrel MIC4103 is a 100V, non-inverting, dual driver that is designed to independently drive both high-side and low-side N-channel MOSFETs. It features fast propagation delay times and can drive 1000 pF load with 10ns rise times and 6 ns fall times [1]. The device consumes very little power, has supply under-voltage protection, and is rated for a -40 C to +125 C junction temperature range. The floating high-side driver of the chip can sustain boost voltages up to 100 V. Table I shows some of the device manufacturer s specification.

Simple-to-prepare multipoint field emitter

NASA Astrophysics Data System (ADS)

Sominskii, G. G.; Taradaev, E. P.; Tumareva, T. A.; Mishin, M. V.; Kornishin, S. Yu.

2015-07-01

We investigate multitip field emitters prepared by electroerosion treatment of the surface of molybdenum samples. Their characteristics are determined for operation with a protecting activated fullerene coating. Our experiments indicate that such cathodes are promising for high-voltage electron devices operating in technical vacuum.

High-voltage subnanosecond dielectric breakdown

NASA Astrophysics Data System (ADS)

Mankowski, John Jerome

Current interests in ultrawideband radar sources are in the microwave regime, which correspond to voltage pulse risetimes less than a nanosecond. Some new sources, including the Phillips Laboratory Hindenberg series of hydrogen gas switched pulsers use hydrogen at hundreds of atmospheres of pressure in the switch. Unfortunately, the published data of electrical breakdown of gas and liquid media at these time lengths are relatively scarce. A study was conducted on the electrical breakdown properties of liquid and gas dielectrics at subnanosecond and nanoseconds. Two separate voltage sources with pulse risetimes less than 400 ps were developed. Diagnostic probes were designed and tested for their capability of detecting high voltage pulses at these fast risetimes. A thorough investigation into E-field strengths of liquid and gas dielectrics at breakdown times ranging from 0.4 to 5 ns was performed. The voltage polarity dependence on breakdown strength is observed. Streak camera images of streamer formation were taken. The effect of ultraviolet radiation, incident upon the gap, on statistical lag time was determined.

Low Voltage Electrowetting on Ferroelectric PVDF-HFP Insulator with Highly Tunable Contact Angle Range.

PubMed

Sawane, Yogesh B; Ogale, Satishchandra B; Banpurkar, Arun G

2016-09-14

We demonstrate a consistent electrowetting response on ferroelectric poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) insulator covered with a thin Teflon AF layer. This bilayer exhibits a factor of 3 enhancement in the contact angle modulation compared to that of conventional single-layered Teflon AF dielectric. On the basis of the proposed model the enhancement is attributed to the high value of effective dielectric constant (εeff ≈ 6) of the bilayer. Furthermore, the bilayer dielectric exhibits a hysteresis-free contact angle modulation over many AC voltage cycles. But the contact angle modulation for DC voltage shows a hysteresis because of the field-induced residual polarization in the ferroelectric layer. Finally, we show that a thin bilayer exhibits contact angle modulation of Δθ (U) ≈ 60° at merely 15 V amplitude of AC voltage indicating a potential dielectric for practical low voltage electrowetting applications. A proof of concept confirms electrowetting based rapid mixing of a fluorescent dye in aqueous glycerol solution for 15 V AC signal.

Asymmetric injection and distribution of space charges in propylene carbonate under impulse voltage

NASA Astrophysics Data System (ADS)

Sima, Wenxia; Chen, Qiulin; Sun, Potao; Yang, Ming; Guo, Hongda; Ye, Lian

2018-05-01

Space charge can distort the electric field in high voltage stressed liquid dielectrics and lead to breakdown. Observing the evolution of space charge in real time and determining the influencing factors are of considerable significance. The spatio-temporal evolution of space charge in propylene carbonate, which is very complex under impulse voltage, was measured in this study through the time-continuous Kerr electro-optic field mapping measurement. We found that the injection charge from a brass electrode displayed an asymmetric effect; that is, the negative charge injection near the cathode lags behind the positive charge injection near the anode. Physical mechanisms, including charge generation and drift, are analyzed, and a voltage-dependent saturated drift rectification model was established to explain the interesting phenomena. Mutual validation of models and our measurement data indicated that a barrier layer, which is similar to metal-semiconductor contact, was formed in the contact interface between the electrode and propylene carbonate and played an important role in the space charge injection.

Performance characteristics of nanocrystalline diamond vacuum field emission transistor array

NASA Astrophysics Data System (ADS)

Hsu, S. H.; Kang, W. P.; Davidson, J. L.; Huang, J. H.; Kerns, D. V.

2012-06-01

Nitrogen-incorporated nanocrystalline diamond (ND) vacuum field emission transistor (VFET) with self-aligned gate is fabricated by mold transfer microfabrication technique in conjunction with chemical vapor deposition (CVD) of nanocrystalline diamond on emitter cavity patterned on silicon-on-insulator (SOI) substrate. The fabricated ND-VFET demonstrates gate-controlled emission current with good signal amplification characteristics. The dc characteristics of the ND-VFET show well-defined cutoff, linear, and saturation regions with low gate turn-on voltage, high anode current, negligible gate intercepted current, and large dc voltage gain. The ac performance of the ND-VFET is measured, and the experimental data are analyzed using a modified small signal circuit model. The experimental results obtained for the ac voltage gain are found to agree with the theoretical model. A higher ac voltage gain is attainable by using a better test setup to eliminate the associated parasitic capacitances. The paper reveals the amplifier characteristics of the ND-VFET for potential applications in vacuum microelectronics.

Performance characteristics of nanocrystalline diamond vacuum field emission transistor array

NASA Astrophysics Data System (ADS)

Hsu, S. H.; Kang, W. P.; Davidson, J. L.; Huang, J. H.; Kerns, D. V.

2012-05-01

Nitrogen-incorporated nanocrystalline diamond (ND) vacuum field emission transistor (VFET) with self-aligned gate is fabricated by mold transfer microfabrication technique in conjunction with chemical vapor deposition (CVD) of nanocrystalline diamond on emitter cavity patterned on silicon-on-insulator (SOI) substrate. The fabricated ND-VFET demonstrates gate-controlled emission current with good signal amplification characteristics. The dc characteristics of the ND-VFET show well-defined cutoff, linear, and saturation regions with low gate turn-on voltage, high anode current, negligible gate intercepted current, and large dc voltage gain. The ac performance of the ND-VFET is measured, and the experimental data are analyzed using a modified small signal circuit model. The experimental results obtained for the ac voltage gain are found to agree with the theoretical model. A higher ac voltage gain is attainable by using a better test setup to eliminate the associated parasitic capacitances. The paper reveals the amplifier characteristics of the ND-VFET for potential applications in vacuum microelectronics.

Conduction-coupled Tesla transformer.

PubMed

Reed, J L

2015-03-01

A proof-of-principle Tesla transformer circuit is introduced. The new transformer exhibits the high voltage-high power output signal of shock-excited transformers. The circuit, with specification of proper circuit element values, is capable of obtaining extreme oscillatory voltages. The primary and secondary portions of the circuit communicate solely by conduction. The destructive arcing between the primary and secondary inductors in electromagnetically coupled transformers is ubiquitous. Flashover is eliminated in the new transformer as the high-voltage inductors do not interpenetrate and so do not possess an annular volume of electric field. The inductors are remote from one another. The high voltage secondary inductor is isolated in space, except for a base feed conductor, and obtains earth by its self-capacitance to the surroundings. Governing equations, for the ideal case of no damping, are developed from first principles. Experimental, theoretical, and circuit simulator data are presented for the new transformer. Commercial high-temperature superconductors are discussed as a means to eliminate the counter-intuitive damping due to small primary inductances in both the electromagnetic-coupled and new conduction-coupled transformers.

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

PubMed Central

Zhao, Chun; Zhao, Ce Zhou; Lu, Qifeng; Yan, Xiaoyi; Taylor, Stephen; Chalker, Paul R.

2014-01-01

Oxide materials with large dielectric constants (so-called high-k dielectrics) have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). A novel characterization (pulse capacitance-voltage) method was proposed in detail. The pulse capacitance-voltage technique was employed to characterize oxide traps of high-k dielectrics based on the Metal Oxide Semiconductor (MOS) capacitor structure. The variation of flat-band voltages of the MOS structure was observed and discussed accordingly. Some interesting trapping/detrapping results related to the lanthanide aluminum oxide traps were identified for possible application in Flash memory technology. After understanding the trapping/detrapping mechanism of the high-k oxides, a solid foundation was prepared for further exploration into charge-trapping non-volatile memory in the future. PMID:28788225

Cavallo's multiplier for in situ generation of high voltage

NASA Astrophysics Data System (ADS)

Clayton, S. M.; Ito, T. M.; Ramsey, J. C.; Wei, W.; Blatnik, M. A.; Filippone, B. W.; Seidel, G. M.

2018-05-01

A classic electrostatic induction machine, Cavallo's multiplier, is suggested for in situ production of very high voltage in cryogenic environments. The device is suitable for generating a large electrostatic field under conditions of very small load current. Operation of the Cavallo multiplier is analyzed, with quantitative description in terms of mutual capacitances between electrodes in the system. A demonstration apparatus was constructed, and measured voltages are compared to predictions based on measured capacitances in the system. The simplicity of the Cavallo multiplier makes it amenable to electrostatic analysis using finite element software, and electrode shapes can be optimized to take advantage of a high dielectric strength medium such as liquid helium. A design study is presented for a Cavallo multiplier in a large-scale, cryogenic experiment to measure the neutron electric dipole moment.

Tunneling magnetoresistance tuned by a vertical electric field in an AA-stacked graphene bilayer with double magnetic barriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Dali, E-mail: wangdali@mail.ahnu.edu.cn; National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093; Jin, Guojun, E-mail: gjin@nju.edu.cn

2013-12-21

We investigate the effect of a vertical electric field on the electron tunneling and magnetoresistance in an AA-stacked graphene bilayer modulated by the double magnetic barriers with parallel or antiparallel configuration. The results show that the electronic transmission properties in the system are sensitive to the magnetic-barrier configuration and the bias voltage between the graphene layers. In particular, it is found that for the antiparallel configuration, within the low energy region, the blocking effect is more obvious compared with the case for the parallel configuration, and even there may exist a transmission spectrum gap which can be arbitrarily tuned bymore » the field-induced interlayer bias voltage. We also demonstrate that the significant discrepancy between the conductance for both parallel and antiparallel configurations would result in a giant tunneling magnetoresistance ratio, and further the maximal magnetoresistance ratio can be strongly modified by the interlayer bias voltage. This leads to the possible realization of high-quality magnetic sensors controlled by a vertical electric field in the AA-stacked graphene bilayer.« less

Voltage current characteristics of type III superconductors

NASA Astrophysics Data System (ADS)

Dorofejev, G. L.; Imenitov, A. B.; Klimenko, E. Yu.

1980-06-01

An adequate description of voltage-current characteristics is important in order to understand the nature of high critical current for the electrodynamic construction of type-III superconductors and for commercial superconductor specification. Homogenious monofilament and multifilament Nb-Ti, Nb-Zr, Nb 3Sn wires were investigated in different ranges of magnetic field, temperature and current. The longitudinal electric field for homogenious wires may be described by E=J ρnexp- T c/T 0+ T/T 0+ B/B 0+ J/J 0, where To, Bo, Jo are the increasing parameters, which depend weakly on B and T, of the electric field. The shape of the voltage-current characteristics of multifilament wires, and the parameter's dependence on temperature and magnetic field may be explained qualitatively by the longitudinal heterogeneous nature of the filaments. A method of attaining the complete specification of the wire's electro-physical properties is proposed. It includes the traditional description of a critical surface (ie the surface corresponding to a certain conventional effective resistivity in T, B, J - space) and a description of any increasing parameter that depends on B and T.

Through thick and thin: tuning the threshold voltage in organic field-effect transistors.

PubMed

Martínez Hardigree, Josué F; Katz, Howard E

2014-04-15

Organic semiconductors (OSCs) constitute a class of organic materials containing densely packed, overlapping conjugated molecular moieties that enable charge carrier transport. Their unique optical, electrical, and magnetic properties have been investigated for use in next-generation electronic devices, from roll-up displays and radiofrequency identification (RFID) to biological sensors. The organic field-effect transistor (OFET) is the key active element for many of these applications, but the high values, poor definition, and long-term instability of the threshold voltage (V(T)) in OFETs remain barriers to realization of their full potential because the power and control circuitry necessary to compensate for overvoltages and drifting set points decrease OFET practicality. The drifting phenomenon has been widely observed and generally termed "bias stress." Research on the mechanisms responsible for this poor V(T) control has revealed a strong dependence on the physical order and chemical makeup of the interfaces between OSCs and adjacent materials in the OFET architecture. In this Account, we review the state of the art for tuning OFET performance via chemical designs and physical processes that manipulate V(T). This parameter gets to the heart of OFET operation, as it determines the voltage regimes where OFETs are either ON or OFF, the basis for the logical function of the devices. One obvious way to decrease the magnitude and variability of V(T) is to work with thinner and higher permittivity gate dielectrics. From the perspective of interfacial engineering, we evaluate various methods that we and others have developed, from electrostatic poling of gate dielectrics to molecular design of substituted alkyl chains. Corona charging of dielectric surfaces, a method for charging the surface of an insulating material using a constant high-voltage field, is a brute force means of shifting the effective gate voltage applied to a gate dielectric. A gentler and more direct method is to apply surface voltage to dielectric interfaces by direct contact or postprocess biasing; these methods could also be adapted for high throughput printing sequences. Dielectric hydrophobicity is an important chemical property determining the stability of the surface charges. Functional organic monolayers applied to dielectrics, using the surface attachment chemistry made available from "self-assembled" monolayer chemistry, provide local electric fields without any biasing process at all. To the extent that the monolayer molecules can be printed, these are also suitable for high throughput processes. Finally, we briefly consider V(T) control in the context of device integration and reliability, such as the role of contact resistance in affecting this parameter.

Modeling and strain gauging of eddy current repulsion deicing systems

NASA Technical Reports Server (NTRS)

Smith, Samuel O.

1993-01-01

Work described in this paper confirms and extends work done by Zumwalt, et al., on a variety of in-flight deicing systems that use eddy current repulsion for repelling ice. Two such systems are known as electro-impulse deicing (EIDI) and the eddy current repulsion deicing strip (EDS). Mathematical models for these systems are discussed for their capabilities and limitations. The author duplicates a particular model of the EDS. Theoretical voltage, current, and force results are compared directly to experimental results. Dynamic strain measurements results are presented for the EDS system. Dynamic strain measurements near EDS or EIDI coils are complicated by the high magnetic fields in the vicinity of the coils. High magnetic fields induce false voltage signals out of the gages.

Induced Voltage in an Open Wire

NASA Astrophysics Data System (ADS)

Morawetz, K.; Gilbert, M.; Trupp, A.

2017-07-01

A puzzle arising from Faraday's law has been considered and solved concerning the question which voltage will be induced in an open wire with a time-varying homogeneous magnetic field. In contrast to closed wires where the voltage is determined by the time variance of the magnetic field and the enclosed area, in an open wire we have to integrate the electric field along the wire. It is found that the longitudinal electric field with respect to the wave vector contributes with 1/3 and the transverse field with 2/3 to the induced voltage. In order to find the electric fields the sources of the magnetic fields are necessary to know. The representation of a spatially homogeneous and time-varying magnetic field implies unavoidably a certain symmetry point or symmetry line which depend on the geometry of the source. As a consequence the induced voltage of an open wire is found to be the area covered with respect to this symmetry line or point perpendicular to the magnetic field. This in turn allows to find the symmetry points of a magnetic field source by measuring the voltage of an open wire placed with different angles in the magnetic field. We present exactly solvable models of the Maxwell equations for a symmetry point and for a symmetry line, respectively. The results are applicable to open circuit problems like corrosion and for astrophysical applications.

Tunneling calculations for GaAs-Al(x)Ga(1-x)As graded band-gap sawtooth superlattices

NASA Technical Reports Server (NTRS)

Forrest, Kathrine; Meijer, Paul H. E.

1990-01-01

The transmission resonance spectra and tunneling current-voltage characteristics for direct conduction band electrons in sawtooth GaAs-Al(x)Ga(1-x)As superlattices are computed. Only direct-gap interfaces are considered. It is found that sawtooth superlattices exhibit resonant tunneling similar to that in step superlattices, manifested by correlation of peaks and regions of negative differential resistance in the current-voltage curves with transmission resonances. The Stark shift of the resonances of step-barrier superlattices is a linear function of the field, whereas in sawtooth superlattices under strong fields the shift is not a simple function of the field. This follows from the different ways in which the two structures deform under uniform electric fields: the sawtooth deforms into a staircase, at which field strength all barriers to tunneling are eradicated. The step-barrier superlattice always presents some barrier to tunneling, no matter how high the electric field strength.

A multichannel and wide suitablity digital control device for liquid-crystal microlens controlled electrically

NASA Astrophysics Data System (ADS)

Zhang, Bo; Xin, Zhaowei; Wei, Dong; Zhang, Xinyu; Wang, Haiwei; Xie, Changsheng

2017-11-01

In order to overcome the difficulty in imaging detection of high-speed moving targets under complex environments, and to get more comprehensive image information of the target, there is a urgent need to develop new high-performance optical imaging components. Compared to traditional lenses which have fixed shapes and immutable focal length, liquid-crystal microlens (LCMs) can not only adjust the focal length without changing the external shape, but also realize many practical functions such as swinging focus, spectral selection, depth of field adjustment, etc. The physical properties of spatial electric fields constructed between electrode plates of the LCMs are directly related to the light-field adjusting performances of LCMs, such as the polarity of electric field, the frequency and amplitude of applied voltage signal. In other words, the optical behaviors of LCMs will be affected remarkably by the parameters of driving voltage signal mentioned above. To implement these important functions flexibly and effectively, the driving voltage signal must be powerful and flexible. It had better to have multiple channels to control the direction of swinging focus, with relatively wide variance range to spread spectrum selection range, and with high precision to ensure accurately controlling LCMs. In addition, special waveforms may be required to support special functions of LCMs. Therefore a digital control device, which meet the requirements mentioned above, is designed, and then LCMs with it can realize imaging detection of targets in complex environment.

[Management of surgery patients with implanted cardiac pacemakers].

PubMed

Ugljen, R; Dadić, D; Ferek-Petrić, B; Jelić, I; Letica, D; Anić, D; Husar, J

1995-01-01

Patients having cardiac pacemaker implanted may be subjected to various general surgery procedures. Application of electrosurgery for the purpose of resection and coagulation, provides a high frequency electric field which produces electric voltage on the electrodes of the pacing system. This voltage may be detected within the pacing system, and various arrhythmias can be provoked in correlation with underlying rhythm and mode of pacing. Preoperative patient control and proper pacemaker programming can prevent the pacing malfunctions due to the electrosurgery application. Appropriate positioning of the neutral electrode in relation to the pacing system avoids the electric fields intersection and decreases their interference.

Improvement of voltage holding and high current beam acceleration by MeV accelerator for ITER NB

DOE Office of Scientific and Technical Information (OSTI.GOV)

Taniguchi, M.; Kashiwagi, M.; Inoue, T.

Voltage holding of -1 MV is an essential issue in development of a multi-aperture multi-grid (MAMuG) negative ion accelerator, of which target is to accelerate 200 A/m{sup 2} H{sup -} ion beam up to the energy of 1 MeV for several tens seconds. Review of voltage holding results ever obtained with various geometries of the accelerators showed that the voltage holding capability was about a half of designed value based on the experiment obtained from ideal small electrode. This is considered due to local electric field concentration in the accelerators, such as edge and steps between multi-aperture grids and itsmore » support structures. Based on the detailed investigation with electric field analysis, accelerator was modified to reduce the electric field concentration by reshaping the support structures and expanding the gap length between the grid supports. After the modifications, the accelerator succeeded in sustaining -1 MV for more than one hour in vacuum. Improvement of the voltage holding characteristics progressed the energy and current accelerated by the MeV accelerator. Up to 2010, beam parameters achieved by the MAMuG accelerator were increased to 879 keV, 0.36 A (157 A/m{sup 2}) at perveance matched condition and 937 keV, 0.33 A (144 A/m{sup 2}) slightly under perveance.« less

Simulating the Activation of Voltage Sensing Domain for a Voltage-Gated Sodium Channel Using Polarizable Force Field.

PubMed

Sun, Rui-Ning; Gong, Haipeng

2017-03-02

Voltage-gated sodium (Na V ) channels play vital roles in the signal transduction of excitable cells. Upon activation of a Na V channel, the change of transmembrane voltage triggers conformational change of the voltage sensing domain, which then elicits opening of the pore domain and thus allows an influx of Na + ions. Description of this process with atomistic details is in urgent demand. In this work, we simulated the partial activation process of the voltage sensing domain of a prokaryotic Na V channel using a polarizable force field. We not only observed the conformational change of the voltage sensing domain from resting to preactive state, but also rigorously estimated the free energy profile along the identified reaction pathway. Comparison with the control simulation using an additive force field indicates that voltage-gating thermodynamics of Na V channels may be inaccurately described without considering the electrostatic polarization effect.

Correlation between tunability and anisotropy in magnetoelectric voltage tunable inductor (VTI).

PubMed

Yan, Yongke; Geng, Liwei D; Zhang, Lujie; Gao, Xiangyu; Gollapudi, Sreenivasulu; Song, Hyun-Cheol; Dong, Shuxiang; Sanghadasa, Mohan; Ngo, Khai; Wang, Yu U; Priya, Shashank

2017-11-22

Electric field modulation of magnetic properties via magnetoelectric coupling in composite materials is of fundamental and technological importance for realizing tunable energy efficient electronics. Here we provide foundational analysis on magnetoelectric voltage tunable inductor (VTI) that exhibits extremely large inductance tunability of up to 1150% under moderate electric fields. This field dependence of inductance arises from the change of permeability, which correlates with the stress dependence of magnetic anisotropy. Through combination of analytical models that were validated by experimental results, comprehensive understanding of various anisotropies on the tunability of VTI is provided. Results indicate that inclusion of magnetic materials with low magnetocrystalline anisotropy is one of the most effective ways to achieve high VTI tunability. This study opens pathway towards design of tunable circuit components that exhibit field-dependent electronic behavior.

Low-frequency RF Coupling To Unconventional (Fat Unbalanced) Dipoles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ong, M M; Brown, C G; Perkins, M P

2010-12-07

The report explains radio frequency (RF) coupling to unconventional dipole antennas. Normal dipoles have thin equal length arms that operate at maximum efficiency around resonance frequencies. In some applications like high-explosive (HE) safety analysis, structures similar to dipoles with ''fat'' unequal length arms must be evaluated for indirect-lightning effects. An example is shown where a metal drum-shaped container with HE forms one arm and the detonator cable acts as the other. Even if the HE is in a facility converted into a ''Faraday cage'', a lightning strike to the facility could still produce electric fields inside. The detonator cable concentratesmore » the electric field and carries the energy into the detonator, potentially creating a hazard. This electromagnetic (EM) field coupling of lightning energy is the indirect effect of a lightning strike. In practice, ''Faraday cages'' are formed by the rebar of the concrete facilities. The individual rebar rods in the roof, walls and floor are normally electrically connected because of the construction technique of using metal wire to tie the pieces together. There are two additional requirements for a good cage. (1) The roof-wall joint and the wall-floor joint must be electrically attached. (2) All metallic penetrations into the facility must also be electrically connected to the rebar. In this report, it is assumed that these conditions have been met, and there is no arcing in the facility structure. Many types of detonators have metal ''cups'' that contain the explosives and thin electrical initiating wires, called bridge wires mounted between two pins. The pins are connected to the detonator cable. The area of concern is between the pins supporting the bridge wire and the metal cup forming the outside of the detonator. Detonator cables usually have two wires, and in this example, both wires generated the same voltage at the detonator bridge wire. This is called the common-mode voltage. The explosive component inside a detonator is relatively sensitive, and any electrical arc is a concern. In a safety analysis, the pin-to-cup voltage, i.e., detonator voltage, must be calculated to decide if an arc will form. If the electric field is known, the voltage between any two points is simply the integral of the field along a line between the points. Eq. 1.1. For simplicity, it is assumed that the electric field and dipole elements are aligned. Calculating the induced detonator voltage is more complex because of the field concentration caused by metal components. If the detonator cup is not electrically connected to the metal HE container, the portion of the voltage generated by the dipole at the detonator will divide between the container-to-cup and cup-to-pin gaps. The gap voltages are determined by their capacitances. As a simplification, it will be assumed the cup is electrically attached, short circuited, to the HE container. The electrical field in the pin-to-cup area is determined by the field near the dipole, the length of the dipole, the shape of the arms, and the orientation of the arms. Given the characteristics of a lightning strike and the inductance of the facility, the electric fields in the ''Faraday cage'' can be calculated. The important parameters for determining the voltage in an empty facility are the inductance of the rebars and the rate of change of the current, Eq. 1.3. The internal electric fields are directly related to the facility voltages, however, the electric fields in the pin-to-cup space is much higher than the facility fields because the antenna will concentrate the fields covered by the arms. Because the lightning current rise-time is different for every strike, the maximum electric field and the induced detonator voltage should be described by probability distributions. For pedantic purposes, the peak field in the simulations will be simply set to 1 V/m. Lightning induced detonator voltages can be calculated by scaling up with the facility fields. Any metal object around the explosives, such as a work stand, will also distort the electric fields. A computer simulation of the electric fields in a facility with a work stand and HE container is shown. In this configuration, the work stand is grounded, and the intensity of field around the HE (denoted in dark blue) is reduced relative to the rest of the work bay (denoted lighter blue). The area above work stand posts has much higher fields indicated by red. The fields on top of the container are also affected. Without an understanding of how the electric fields are distributed near the detonator cable and container, it is not possible to calculate the induced detonator voltage. The average lightning current has rise- and fall-times of 3 us and 50 us respectively, and this translates to a wavelength that is long when compared with the length of the HE container or detonator cable.« less

A Wide Field of View Plasma Spectrometer

DOE PAGES

Skoug, Ruth M.; Funsten, Herbert O.; Moebius, Eberhard; ...

2016-07-01

Here we present a fundamentally new type of space plasma spectrometer, the wide field of view plasma spectrometer, whose field of view is >1.25π ster using fewer resources than traditional methods. The enabling component is analogous to a pinhole camera with an electrostatic energy-angle filter at the image plane. Particle energy-per-charge is selected with a tunable bias voltage applied to the filter plate relative to the pinhole aperture plate. For a given bias voltage, charged particles from different directions are focused by different angles to different locations. Particles with appropriate locations and angles can transit the filter plate and aremore » measured using a microchannel plate detector with a position-sensitive anode. Full energy and angle coverage are obtained using a single high-voltage power supply, resulting in considerable resource savings and allowing measurements at fast timescales. Lastly, we present laboratory prototype measurements and simulations demonstrating the instrument concept and discuss optimizations of the instrument design for application to space measurements.« less

Low-voltage organic strain sensor on plastic using polymer/high- K inorganic hybrid gate dielectrics

NASA Astrophysics Data System (ADS)

Jung, Soyoun; Ji, Taeksoo; Varadan, Vijay K.

2007-12-01

In this paper, gate-induced pentacene semiconductor strain sensors based on hybrid-gate dielectrics using poly-vinylphenol (PVP) and high-K inorganic, Ta IIO 5 are fabricated on flexible substrates, polyethylene naphthalate (PEN). The Ta IIO 5 gate dielectric layer is combined with a thin PVP layer to obtain very smooth and hydrophobic surfaces which improve the molecular structures of pentacene films. The PVP-Ta IIO 5 hybrid-gate dielectric films exhibit a high dielectric capacitance and low leakage current. The sensors adopting thin film transistor (TFT)-like structures show a significantly reduced operating voltage (~6V), and good device characteristics with a field-effect mobility of 1.89 cm2/V•s, a threshold voltage of -0.5 V, and an on/off ratio of 10 3. The strain sensor, one of the practical applications in large-area organic electronics, was characterized with different bending radii of 50, 40, 30, and 20 mm. The sensor output signals were significantly improved with low-operating voltages.

Maximizing fluid delivered by bubble-free electroosmotic pump with optimum pulse voltage waveform.

PubMed

Tawfik, Mena E; Diez, Francisco J

2017-03-01

In generating high electroosmotic (EO) flows for use in microfluidic pumps, a limiting factor is faradaic reactions that are more pronounced at high electric fields. These reactions lead to bubble generation at the electrodes and pump efficiency reduction. The onset of gas generation for high current density EO pumping depends on many parameters including applied voltage, working fluid, and pulse duration. The onset of gas generation can be delayed and optimized for maximum volume pumped in the minimum time possible. This has been achieved through the use of a novel numerical model that predicts the onset of gas generation during EO pumping using an optimized pulse voltage waveform. This method allows applying current densities higher than previously reported. Optimal pulse voltage waveforms are calculated based on the previous theories for different current densities and electrolyte molarity. The electroosmotic pump performance is investigated by experimentally measuring the fluid volume displaced and flow rate. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electric field modulated ferromagnetism in ZnO films deposited at room temperature

NASA Astrophysics Data System (ADS)

Bu, Jianpei; Liu, Xinran; Hao, Yanming; Zhou, Guangjun; Cheng, Bin; Huang, Wei; Xie, Jihao; Zhang, Heng; Qin, Hongwei; Hu, Jifan

2018-04-01

The ZnO film deposited at room temperature, which is composed of the amorphous-phase background plus a few nanograins or nanoclusters (about 1-2 nm), exhibits room temperature ferromagnetism (FM). Such FM is found to be connected with oxygen vacancies. For the Ta/ZnO/Pt device based on the medium layer ZnO deposited at room temperature, the saturation magnetization not only is modulated between high and low resistive states by electric voltage with DC loop electric current but also increases/decreases through adjusting the magnitudes of positive/negative DC sweeping voltage. Meanwhile, the voltage-controlled conductance quantization is observed in Ta/ZnO/Pt, accompanying the voltage-controlled magnetization. However, the saturation magnetization of the Ta/ZnO/Pt device becomes smaller under positive electric voltage and returns in some extent under negative electric voltage, when the DC loop electric current is not applied.

Field Performance of Photovoltaic Systems in the Tucson Desert

NASA Astrophysics Data System (ADS)

Orsburn, Sean; Brooks, Adria; Cormode, Daniel; Greenberg, James; Hardesty, Garrett; Lonij, Vincent; Salhab, Anas; St. Germaine, Tyler; Torres, Gabe; Cronin, Alexander

2011-10-01

At the Tucson Electric Power (TEP) solar test yard, over 20 different grid-connected photovoltaic (PV) systems are being tested. The goal at the TEP solar test yard is to measure and model real-world performance of PV systems and to benchmark new technologies such as holographic concentrators. By studying voltage and current produced by the PV systems as a function of incident irradiance, and module temperature, we can compare our measurements of field-performance (in a harsh desert environment) to manufacturer specifications (determined under laboratory conditions). In order to measure high-voltage and high-current signals, we designed and built reliable, accurate sensors that can handle extreme desert temperatures. We will present several benchmarks of sensors in a controlled environment, including shunt resistors and Hall-effect current sensors, to determine temperature drift and accuracy. Finally we will present preliminary field measurements of PV performance for several different PV technologies.

Thermal Control Utilizing an Thermal Control Utilizing an Two-Phase Loop with High Heat Flux Source

NASA Technical Reports Server (NTRS)

Jeong, Seong-Il; Didion, Jeffrey

2004-01-01

The electric field applied in dielectric fluids causes an imbalance in the dissociation-recombination reaction generated free space charges. The generated charges are redistributed by the applied electric field resulting in the heterocharge layers in the Vicinity of the electrodes. Proper design of the electrodes generates net axial flow motion pumping the fluid. The electrohydrodynamic (EHD) conduction pump is a new device that pumps dielectric fluids utilizing heterocharge layers formed by imposition of electrostatic fields. This paper evaluates the experimental performance of a two-phase breadboard thermal control loop consisting of an EHD conduction pump, condenser, pre-heater, high heat flux evaporator (HE), transport lines, and reservoir (accumulator). The generated pressure head and the maximum applicable heat flux are experimentally determined at various applied voltages and sink temperatures. Recovery from dryout condition by increasing the applied voltage to the pump is also demonstrated.

High-Voltage Isolation Transformer

NASA Technical Reports Server (NTRS)

Clatterbuck, C. H.; Ruitberg, A. P.

1985-01-01

Arcing and field-included surface erosion reduced by electrostatic shields around windings and ferromagnetic core of 80-kilovolt isolation transformer. Fabricated from high-resistivity polyurethane-based material brushed on critical surfaces, shields maintained at approximately half potential difference of windings.

Optically initiated silicon carbide high voltage switch

DOEpatents

Caporaso, George J [Livermore, CA; Sampayan, Stephen E [Manteca, CA; Sullivan, James S [Livermore, CA; Sanders,; David, M [Livermore, CA

2011-02-22

An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

High Current Hollow Cathode Plasma Plume Measurements

NASA Technical Reports Server (NTRS)

Thomas, Robert E.; Kamhawi, Hani; Williams, George J., Jr.

2014-01-01

Plasma plume measurements are reported for a hollow cathode assembly (HCA) operated at discharge currents of 50, 70, and 100 A at xenon flow rates between 19 - 46 standard cubic centimeter per minute. The HCA was centrally mounted in the NASA-300MS Hall Thruster and was operated in the "spot" and "plume" modes with additional data taken with an applied magnetic field. Langmuir probes, retarding potential analyzers, and optical emission spectroscopy were employed to measure plasma properties near the orifice of the HCA and to assess the charge state of the near-field plasma. Electron temperatures (2-6 electron volt) and plasma potentials are consistent with probe-measured values in previous investigations. Operation with an applied-field yields higher discharge voltages, increased Xe III production, and increased signals from the 833.5 nm C I line. While operating in plume mode and with an applied field, ion energy distribution measurements yield ions with energies significantly exceeding the applied discharge voltage. These findings are correlated with high-frequency oscillations associated with each mode.

Evaluation of the effects of electric fields on implanted cardiac pacemakers. Final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moss, A.J.; Carstensen, E.

1985-02-01

The effects of extra high voltage (EHV) transmission line electric fields on pacemaker function were evaluated in 11 patients with seven different implanted pacemaker models from four manufacturers. Alteration in pacemaker function was demonstrated in five unipolar units (three different models) from two manufacturers during exposure to electric fields ranging from 2 to 9 kV/m, with total body currents from 47 to 175 ..mu..A. These electric fields and body currents are representative of values that can be encountered by individuals standing beneath EHV transmission lines. Transient alterations in pacemaker function observed in this study included inappropriate triggered activity, inhibition ofmore » impulse generation, reduction in rate, and reversion from demand to asynchronous mode. Electromagnetic interference from high voltage transmission lines can induce alterations in pacemaker function in certain designs of these devices. However, pacemaker manufacturers can incorporate appropriate circuits in the pacemaker design to eliminate this problem. 8 references.« less

Direct Synthesis of Carbon Nanotube Field Emitters on Metal Substrate for Open-Type X-ray Source in Medical Imaging.

PubMed

Gupta, Amar Prasad; Park, Sangjun; Yeo, Seung Jun; Jung, Jaeik; Cho, Chonggil; Paik, Sang Hyun; Park, Hunkuk; Cho, Young Chul; Kim, Seung Hoon; Shin, Ji Hoon; Ahn, Jeung Sun; Ryu, Jehwang

2017-07-29

We report the design, fabrication and characterization of a carbon nanotube enabled open-type X-ray system for medical imaging. We directly grew the carbon nanotubes used as electron emitter for electron gun on a non-polished raw metallic rectangular-rounded substrate with an area of 0.1377 cm² through a plasma enhanced chemical vapor deposition system. The stable field emission properties with triode electrodes after electrical aging treatment showed an anode emission current of 0.63 mA at a gate field of 7.51 V/μm. The 4.5-inch cubic shape open type X-ray system was developed consisting of an X-ray aperture, a vacuum part, an anode high voltage part, and a field emission electron gun including three electrodes with focusing, gate and cathode electrodes. Using this system, we obtained high-resolution X-ray images accelerated at 42-70 kV voltage by digital switching control between emitter and ground electrode.

Direct Synthesis of Carbon Nanotube Field Emitters on Metal Substrate for Open-Type X-ray Source in Medical Imaging

PubMed Central

Gupta, Amar Prasad; Park, Sangjun; Yeo, Seung Jun; Jung, Jaeik; Cho, Chonggil; Paik, Sang Hyun; Park, Hunkuk; Cho, Young Chul; Kim, Seung Hoon; Shin, Ji Hoon; Ahn, Jeung Sun; Ryu, Jehwang

2017-01-01

We report the design, fabrication and characterization of a carbon nanotube enabled open-type X-ray system for medical imaging. We directly grew the carbon nanotubes used as electron emitter for electron gun on a non-polished raw metallic rectangular-rounded substrate with an area of 0.1377 cm2 through a plasma enhanced chemical vapor deposition system. The stable field emission properties with triode electrodes after electrical aging treatment showed an anode emission current of 0.63 mA at a gate field of 7.51 V/μm. The 4.5-inch cubic shape open type X-ray system was developed consisting of an X-ray aperture, a vacuum part, an anode high voltage part, and a field emission electron gun including three electrodes with focusing, gate and cathode electrodes. Using this system, we obtained high-resolution X-ray images accelerated at 42–70 kV voltage by digital switching control between emitter and ground electrode. PMID:28773237

Low-high junction theory applied to solar cells

NASA Technical Reports Server (NTRS)

Godlewski, M. P.; Baraona, C. R.; Brandhorst, H. W., Jr.

1973-01-01

Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open circuit voltage and improved radiation resistance. Several analytical models for open circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero SRV case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells. Detailed descriptions and derivations for the models are included. The correspondences between them are discussed. This modeling suggests that the meaning of minority carrier diffusion length measured in BSF cells be reexamined.

[Desulphurization with multi-needle-water film electrodes by corona discharge].

PubMed

Huang, Xu-ran; Li, Guo-feng; Li, Jie; Wu, Yan

2008-09-01

The study of this paper adopted stainless steel multi-needle as a high voltage electrode system, and water film as low voltage electrode. The electrodes were supplied with negative DC high voltage. Polluted gas containing sulfur dioxide (SO2) flowed into the corona discharge field from the center of the high voltage electrode system in an axis direction, then get across the water surface. Under the effect of corona discharge plasma and water absorption, SO2 was removed by converting it into sulfuric acid. The effect of the three factors which were the applied voltage, SO2 inlet concentration and duration of the exposure to the corona discharge on desulphurization efficiency has been studied mostly. Moreover, the concentrations of SO3(2-) and SO4(2-) ions in the water were measured and the mechanism of desulphurization was analyzed. The results showed that there was a synergistic effect on the removal of SO2 when combining corona discharge and water absorption, and both the desulphurization efficiency and the amount of sulfuric acid increased evidently. As the applied voltage and the duration increased, the desulphurization efficiency increased. Also, the SO2 inlet concentration had effect on desulphurization efficiency. When the SO2 inlet concentration was 430 x 10(-6), the voltage was 14.5 kV and the duration was 7.5 s, a desulphurization efficiency of more than 90% could be attained.

An experimental investigation of electric flashover across solid insulators in vacuum

NASA Technical Reports Server (NTRS)

Vonbaeyer, H. C.

1984-01-01

The insulation of high voltage conductors often employs solid insulators for many applications. In such applications, an unexpected electric flashover may occur along the insulator surface. Under conditions of high vacuum, the flashover voltage across the insulator is observed to be lower compared with that of the same electrode separation without an insulator. The reason for such an extreme reduction of flashover voltage is not well understood. Several models based on the secondary electron emission, were proposed to explain the onset of the surface flashover. The starting point and the developing velocity of the surface flashover were determined. An intensified image converter camera was used to observe the initial stage of electrical flashover along the insulator surface parallel to the electric field. Several different insulator materials were used as test pieces to determine the effect of the dielectric constant on the flashover voltage characteristics.

Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctions.

PubMed

Kuo, Yen-Kuang; Shih, Ya-Hsuan; Chang, Jih-Yuan; Lai, Wei-Chih; Liu, Heng; Chen, Fang-Ming; Lee, Ming-Lun; Sheu, Jinn-Kong

2017-08-07

Monolithic stacked InGaN light-emitting diode (LED) connected by a polarization-enhanced GaN/AlN-based tunnel junction is demonstrated experimentally in this study. The typical stacked LEDs exhibit 80% enhancement in output power compared with conventional single LEDs because of the repeated use of electrons and holes for photon generation. The typical operation voltage of stacked LEDs is higher than twice the operation voltage of single LEDs. This high operation voltage can be attributed to the non-optimal tunneling junction in stacked LEDs. In addition to the analyses of experimental results, theoretical analysis of different schemes of tunnel junctions, including diagrams of energy bands, diagrams of electric fields, and current-voltage relation curves, are investigated using numerical simulation. The results shown in this paper demonstrate the feasibility in developing cost-effective and highly efficient tunnel-junction LEDs.

Spectral shape deformation in inverse spin Hall voltage in Y{sub 3}Fe{sub 5}O{sub 12}|Pt bilayers at high microwave power levels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lustikova, J., E-mail: lustikova@imr.tohoku.ac.jp; Shiomi, Y.; Handa, Y.

2015-02-21

We report on the deformation of microwave absorption spectra and of the inverse spin Hall voltage signals in thin film bilayers of yttrium iron garnet (YIG) and platinum at high microwave power levels in a 9.45-GHz TE{sub 011} cavity. As the microwave power increases from 0.15 to 200 mW, the resonance field shifts to higher values, and the initially Lorentzian spectra of the microwave absorption intensity as well as the inverse spin Hall voltage signals become asymmetric. The contributions from opening of the magnetization precession cone and heating of YIG cannot well reproduce the data. Control measurements of inverse spinmore » Hall voltages on thin-film YIG|Pt systems with a range of line widths underscore the role of spin-wave excitations in spectral deformation.« less

Achievement and improvement of the JT-60U negative ion source for JT-60 Super Advanced (invited)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kojima, A.; Hanada, M.; Tanaka, Y.

2010-02-15

Developments of the large negative ion source have been progressed in the high-energy, high-power, and long-pulse neutral beam injector for JT-60 Super Advanced. Countermeasures have been studied and tested for critical issues of grid heat load and voltage holding capability. As for the heat load of the acceleration grids, direct interception of D{sup -} ions was reduced by adjusting the beamlet steering. As a result, the heat load was reduced below an allowable level for long-pulse injections. As for the voltage holding capability, local electric field was mitigated by tuning gap lengths between large-area acceleration grids in the accelerator. Asmore » a result, the voltage holding capability was improved up to the rated value of 500 kV. To investigate the voltage holding capability during beam acceleration, the beam acceleration test is ongoing with new extended gap.« less

Repetitive flash x-ray generator having a high-durability diode driven by a two-cable-type line pulser

NASA Astrophysics Data System (ADS)

Shikoda, A.; Sato, E.; Sagae, M.; Oizumi, T.; Tamakawa, Y.; Yanagisawa, T.

1994-04-01

The fundamental studies of a repetitive soft flash x-ray generator having a high-durability diode for high-speed radiography in biomedical and technological fields are described. This generator consisted of the following essential components: a constant negative high-voltage power supply, a line-type high-voltage pulser with two 10 m coaxial-cable condensers, each with a capacity of 1.0 nF, a thyratron pulser as a trigger device, an oil-diffusion pump, and a flash x-ray tube. The x-ray tube was of a diode type which was evacuated by an oil-diffusion pump with a pressure of approximately 6.7×10-3 Pa and was composed of a planar tungsten anode, a planar ferrite cathode, and a polymethylmethacrylate tube body. The space between the anode and cathode electrodes (AC space) could be regulated from the outside of the tube. The two cable condensers were charged from -40 to -60 kV by a power supply, and the output voltage was about -1.5 times the charged voltage. Both the first peak voltage and current increased according to increases in the charged voltage, and the maximum values of the voltage and current were about 90 kV and 0.72 kA, respectively. The pulse widths had values of less than 100 ns, and the maximum x-ray intensity was approximately 1.1 μC/kg at 0.5 m per pulse. The repetition rate was less than 54 Hz, and the maximum focal spot size was about 2.0×2.5 mm.

Field-induced strain degradation of AlGaN/GaN high electron mobility transistors on a nanometer scale

NASA Astrophysics Data System (ADS)

Lin, Chung-Han; Doutt, D. R.; Mishra, U. K.; Merz, T. A.; Brillson, L. J.

2010-11-01

Nanoscale Kelvin probe force microscopy and depth-resolved cathodoluminescence spectroscopy reveal an electronic defect evolution inside operating AlGaN/GaN high electron mobility transistors with degradation under electric-field-induced stress. Off-state electrical stress results in micron-scale areas within the extrinsic drain expanding and decreasing in electric potential, midgap defects increasing by orders-of-magnitude at the AlGaN layer, and local Fermi levels lowering as gate-drain voltages increase above a characteristic stress threshold. The pronounced onset of defect formation, Fermi level movement, and transistor degradation at the threshold gate-drain voltage of J. A. del Alamo and J. Joh [Microelectron. Reliab. 49, 1200 (2009)] is consistent with crystal deformation and supports the inverse piezoelectric model of high electron mobility transistor degradation.

Resistive foil edge grading for accelerator and other high voltage structures

DOEpatents

Caporaso, George J.; Sampayan, Stephen F.; Sanders, David M.

2014-06-10

In a structure or device having a pair of electrical conductors separated by an insulator across which a voltage is placed, resistive layers are formed around the conductors to force the electric potential within the insulator to distribute more uniformly so as to decrease or eliminate electric field enhancement at the conductor edges. This is done by utilizing the properties of resistive layers to allow the voltage on the electrode to diffuse outwards, reducing the field stress at the conductor edge. Preferably, the resistive layer has a tapered resistivity, with a lower resistivity adjacent to the conductor and a higher resistivity away from the conductor. Generally, a resistive path across the insulator is provided, preferably by providing a resistive region in the bulk of the insulator, with the resistive layer extending over the resistive region.

Transient, polarity-dependent dielectric response in a twisted nematic liquid crystal under very low frequency excitation.

PubMed

Krishnamurthy, K S

2015-09-01

The electric Freedericksz transition is a second-order quadratic effect, which, in a planarly aligned nematic liquid crystal layer, manifests above a threshold field as a homogeneous symmetric distortion with maximum director-tilt in the midplane. We find that, upon excitation by a low frequency (<0.2Hz) square-wave field, the instability becomes spatially and temporally varying. This is demonstrated using calamitic liquid crystals, initially in the 90°-twisted planar configuration. The distortion occurs close to the negative electrode following each polarity switch and, for low-voltage amplitudes, decays completely in time. We use the elastically favorable geometry of Brochard-Leger walls to establish the location of maximum distortion. Thus, at successive polarity changes, the direction of extension of both annular and open walls switches between the alignment directions at the two substrates. For high voltages, this direction is largely along the midplane director, while remaining marginally oscillatory. These results are broadly understood by taking into account the time-varying and inhomogeneous field conditions that prevail soon after the polarity reverses. Polarity dependence of the instability is traced to the formation of intrinsic double layers that lead to an asymmetry in field distribution in the presence of an external bias. Momentary field elevation near the negative electrode following a voltage sign reversal leads to locally enhanced dielectric and gradient flexoelectric torques, which accounts for the surface-like phenomenon observed at low voltages. These spatiotemporal effects, also found earlier for other instabilities, are generic in nature.

Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe1.64Ga0.36O3 oxide

NASA Astrophysics Data System (ADS)

Bhowmik, R. N.; Vijayasri, G.

2015-06-01

We have studied current-voltage (I-V) characteristics of α-Fe1.64Ga0.36O3, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔVP) 0.345(± 0.001) V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (˜500-700%), magnetoresistance (70-135 %) and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

Ionic liquid versus SiO 2 gated a-IGZO thin film transistors: A direct comparison

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.

Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO 2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~10 5, a promising field effect mobility of 14.20 cm 2V –1s –1,more » and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm 2V –1s –1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.« less

Ionic liquid versus SiO 2 gated a-IGZO thin film transistors: A direct comparison

DOE PAGES

Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; ...

2015-08-12

Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO 2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~10 5, a promising field effect mobility of 14.20 cm 2V –1s –1,more » and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm 2V –1s –1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.« less

Radial Field Piezoelectric Diaphragms

NASA Technical Reports Server (NTRS)

Bryant, R. G.; Effinger, R. T., IV; Copeland, B. M., Jr.

2002-01-01

A series of active piezoelectric diaphragms were fabricated and patterned with several geometrically defined Inter-Circulating Electrodes "ICE" and Interdigitated Ring Electrodes "ICE". When a voltage potential is applied to the electrodes, the result is a radially distributed electric field that mechanically strains the piezoceramic along the Z-axis (perpendicular to the applied electric field). Unlike other piezoelectric bender actuators, these Radial Field Diaphragms (RFDs) strain concentrically yet afford high displacements (several times that of the equivalent Unimorph) while maintaining a constant circumference. One of the more intriguing aspects is that the radial strain field reverses itself along the radius of the RFD while the tangential strain remains relatively constant. The result is a Z-deflection that has a conical profile. This paper covers the fabrication and characterization of the 5 cm. (2 in.) diaphragms as a function of poling field strength, ceramic thickness, electrode type and line spacing, as well as the surface topography, the resulting strain field and displacement as a function of applied voltage at low frequencies. The unique features of these RFDs include the ability to be clamped about their perimeter with little or no change in displacement, the environmentally insulated packaging, and a highly repeatable fabrication process that uses commodity materials.

Miniaturized two-stack Blumlein pulser with a variable repetition-rate for non-thermal irreversible-electroporation experiments

NASA Astrophysics Data System (ADS)

Min, Sun-Hong; Kwon, Ohjoon; Sattorov, Matlabjon; Baek, In-Keun; Kim, Seontae; Jeong, Jin-Young; Hong, Dongpyo; Park, Seunghyuk; Park, Gun-Sik

2017-01-01

Non-thermal irreversible electroporation (NTIRE) to avoid thermal damage to cells during intense DC ns pulsed electric fields (nsPEFs) is a recent modality for medical applications. This mechanism, related to bioelectrical dynamics of the cell, is linked to the effect of a DC electric field and a threshold effect with an electrically stimulated membrane for the charge distribution in the cell. To create the NTIRE condition, the pulse width of the nsPEF should be shorter than the charging time constant of the membrane related to the cell radius, membrane capacitance, cytoplasm resistivity, and medium resistivity. It is necessary to design and fabricate a very intense nanosecond DC electric field pulser that is capable of producing voltages up to the level of 100 kV/cm with an artificial pulse width (˜ns) with controllable repetition rates. Many devices to generate intense DC nsPEF using various pulse-forming line technologies have been introduced thus far. However, the previous Blumlein pulse-generating devices are clearly inefficient due to the energy loss between the input voltage and the output voltage. An improved two-stage stacked Blumlein pulse-forming line can overcome this limitation and decrease the energy loss from a DC power supply. A metal oxide silicon field-effect transistor switch with a fast rise and fall time would enable a high repetition rate (max. 100 kHz) and good endurance against very high voltages (DC ˜ 30 kV). The load is designed to match the sample for exposure to cell suspensions consisting of a 200 Ω resistor matched with a Blumlein circuit and two electrodes without the characteristic RC time effect of the circuit (capacitance =0.174 pF).

Potential of energy harvesting in barium titanate based laminates from room temperature to cryogenic/high temperatures: measurements and linking phase field and finite element simulations

NASA Astrophysics Data System (ADS)

Narita, Fumio; Fox, Marina; Mori, Kotaro; Takeuchi, Hiroki; Kobayashi, Takuya; Omote, Kenji

2017-11-01

This paper studies the energy harvesting characteristics of piezoelectric laminates consisting of barium titanate (BaTiO3) and copper (Cu) from room temperature to cryogenic/high temperatures both experimentally and numerically. First, the output voltages of the piezoelectric BaTiO3/Cu laminates were measured from room temperature to a cryogenic temperature (77 K). The output power was evaluated for various values of load resistance. The results showed that the maximum output power density is approximately 2240 nW cm-3. The output voltages of the BaTiO3/Cu laminates were also measured from room temperature to a higher temperature (333 K). To discuss the output voltages of the BaTiO3/Cu laminates due to temperature changes, phase field and finite element simulations were combined. A phase field model for grain growth was used to generate grain structures. The phase field model was then employed for BaTiO3 polycrystals, coupled with the time-dependent Ginzburg-Landau theory and the oxygen vacancies diffusion, to calculate the temperature-dependent piezoelectric coefficient and permittivity. Using these properties, the output voltages of the BaTiO3/Cu laminates from room temperature to both 77 K and 333 K were analyzed by three dimensional finite element methods, and the results are presented for several grain sizes and oxygen vacancy densities. It was found that electricity in the BaTiO3 ceramic layer is generated not only through the piezoelectric effect caused by a thermally induced bending stress but also by the temperature dependence of the BaTiO3 piezoelectric coefficient and permittivity.

High-voltage plasma interactions calculations using NASCAP/LEO

NASA Technical Reports Server (NTRS)

Mandell, M. J.; Katz, I.

1990-01-01

This paper reviews four previous simulations (two laboratory and two space-flight) of interactions of a high-voltage spacecraft with a plasma under low-earth orbit conditions, performed using a three-dimensional computer code NASCAP/LEO. Results show that NASCAP/LEO can perform meaningful simulations of high-voltage plasma interactions taking into account three-dimensional effects of geometry, spacecraft motion, and magnetic field. Two new calculations are presented: (1) for current collection by 1-mm pinholes in wires (showing that a pinhole in a wire can collect far more current than a similar pinhole in a flat plate); and (2) current collection by Charge-2 mother vehicle launched in December 1985. It is shown that the Charge-2 calculations predicted successfully ion collection at negative bias, the floating potential of a probe outside or inside the sheath under negative bias conditions, and magnetically limited electron collection under electron beam operation at high altitude.

Enhanced tunability of electrical and magnetic properties in (La,Sr)MnO3 thin films via field-assisted oxygen vacancy modulation

NASA Astrophysics Data System (ADS)

Wong, Hon Fai; Ng, Sheung Mei; Cheng, Wang Fai; Liu, Yukuai; Chen, Xinxin; von Nordheim, Danny; Mak, Chee Leung; Dai, Jiyan; Ploss, Bernd; Leung, Chi Wah

2017-12-01

We investigated the tunability of the transport and magnetic properties in 7.5 nm La0.7Sr0.3MnO3 (LSMO) epitaxial films in a field effect geometry with the ferroelectric copolymer P(VDF-TrFE) as the gate insulator. Two different switching behaviors were observed upon application of gate voltages with either high or low magnitudes. The application of single voltage pulses of alternating polarity with an amplitude high enough to switch the remanent polarization of the ferroelectric copolymer led to a 15% change of the resistance of the LSMO channel at temperature 300 K (but less than 1% change at 20 K). A minimal shift of the peak in the resistance-temperature plot was observed, implying that the Curie temperature TC of the manganite layer is not changed. Alternatively, the application of a chain of low voltage pulses was found to shift TC by more than 16 K, and a change of the channel resistance by a 45% was obtained. We attribute this effect to the field-assisted injection and removal of oxygen vacancies in the LSMO layer, which can occur across the thickness of the oxide film. By controlling the oxygen migration, the low-field switching route offers a simple method for modulating the electric and magnetic properties of manganite films.

Shuttlecock-Shaped Molecular Rectifier: Asymmetric Electron Transport Coupled with Controlled Molecular Motion.

PubMed

Ryu, Taekhee; Lansac, Yves; Jang, Yun Hee

2017-07-12

A fullerene derivative with five hydroxyphenyl groups attached around a pentagon, (4-HOC 6 H 4 ) 5 HC 60 (1), has shown an asymmetric current-voltage (I-V) curve in a conducting atomic force microscopy experiment on gold. Such molecular rectification has been ascribed to the asymmetric distribution of frontier molecular orbitals over its shuttlecock-shaped structure. Our nonequilibrium Green's function (NEGF) calculations based on density functional theory (DFT) indeed exhibit an asymmetric I-V curve for 1 standing up between two Au(111) electrodes, but the resulting rectification ratio (RR ∼ 3) is insufficient to explain the wide range of RR observed in experiments performed under a high bias voltage. Therefore, we formulate a hypothesis that high RR (>10) may come from molecular orientation switching induced by a strong electric field applied between two electrodes. Indeed, molecular dynamics simulations of a self-assembled monolayer of 1 on Au(111) show that the orientation of 1 can be switched between standing-up and lying-on-the-side configurations in a manner to align its molecular dipole moment with the direction of the applied electric field. The DFT-NEGF calculations taking into account such field-induced reorientation between up and side configurations indeed yield RR of ∼13, which agrees well with the experimental value obtained under a high bias voltage.

High voltage generation from lead-free magnetoelectric coaxial nanotube arrays and their applications in nano energy harvesters.

PubMed

Lekha, C S Chitra; Kumar, Ajith S; Vivek, S; Rasi, U P Mohammed; Saravanan, K Venkata; Nandakumar, K; Nair, Swapna S

2017-02-03

Harvesting energy from surrounding vibrations and developing self-powered portable devices for wireless and mobile electronics have recently become popular. Here the authors demonstrate the synthesis of piezoelectric energy harvesters based on nanotube arrays by a wet chemical route, which requires no sophisticated instruments. The energy harvester gives an output voltage of 400 mV. Harvesting energy from a sinusoidal magnetic field is another interesting phenomenon for which the authors fabricated a magnetoelectric energy harvester based on piezoelectric-magnetostrictive coaxial nanotube arrays. Piezoelectric K 0.5 Na 0.5 NbO 3 (KNN) is fabricated as the shell and magnetostrictive CoFe 2 O 4 (CFO) as the core of the composite coaxial nanotubes. The delivered voltages are as high as 300 mV at 500 Hz and at a weak ac magnetic field of 100 Oe. Further tailoring of the thickness of the piezoelectric and magnetic layers can enhance the output voltage by several orders. Easy, single-step wet chemical synthesis enhances the industrial upscaling potential of these nanotubes as energy harvesters. In view of the excellent properties reported here, the lead-free piezoelectric component (KNN) in this nanocomposite should be explored for eco-friendly piezoelectric as well as magnetoelectric power generators in nanoelectromechanical systems (NEMS).

High voltage generation from lead-free magnetoelectric coaxial nanotube arrays and their applications in nano energy harvesters

NASA Astrophysics Data System (ADS)

Lekha, C. S. Chitra; Kumar, Ajith S.; Vivek, S.; Rasi, U. P. Mohammed; Venkata Saravanan, K.; Nandakumar, K.; Nair, Swapna S.

2017-02-01

Harvesting energy from surrounding vibrations and developing self-powered portable devices for wireless and mobile electronics have recently become popular. Here the authors demonstrate the synthesis of piezoelectric energy harvesters based on nanotube arrays by a wet chemical route, which requires no sophisticated instruments. The energy harvester gives an output voltage of 400 mV. Harvesting energy from a sinusoidal magnetic field is another interesting phenomenon for which the authors fabricated a magnetoelectric energy harvester based on piezoelectric-magnetostrictive coaxial nanotube arrays. Piezoelectric K0.5Na0.5NbO3 (KNN) is fabricated as the shell and magnetostrictive CoFe2O4 (CFO) as the core of the composite coaxial nanotubes. The delivered voltages are as high as 300 mV at 500 Hz and at a weak ac magnetic field of 100 Oe. Further tailoring of the thickness of the piezoelectric and magnetic layers can enhance the output voltage by several orders. Easy, single-step wet chemical synthesis enhances the industrial upscaling potential of these nanotubes as energy harvesters. In view of the excellent properties reported here, the lead-free piezoelectric component (KNN) in this nanocomposite should be explored for eco-friendly piezoelectric as well as magnetoelectric power generators in nanoelectromechanical systems (NEMS).

Video-microscopy of NCAP films: the observation of LC droplets in real time

NASA Astrophysics Data System (ADS)

Reamey, Robert H.; Montoya, Wayne; Wong, Abraham

1992-06-01

We have used video-microscopy to observe the behavior of liquid crystal (LC) droplets within nematic droplet-polymer films (NCAP) as the droplets respond to an applied electric field. The textures observed at intermediate fields yielded information about the process of liquid crystal orientation dynamics within droplets. The nematic droplet-polymer films had low LC content (less than 1 percent) to allow the observation of individual droplets in a 2 - 6 micrometers size range. The aqueous emulsification technique was used to prepare the films as it allows the straightforward preparation of low LC content films with a controlled droplet size range. Standard electro-optical (E-O) tests were also performed on the films, allowing us to correlate single droplet behavior with that of the film as a whole. Hysteresis measured in E-O tests was visually confirmed by droplet orientation dynamics; a film which had high hysteresis in E-O tests exhibited distinctly different LC orientations within the droplet when ramped up in voltage than when ramped down in voltage. Ramping the applied voltage to well above saturation resulted in some droplets becoming `stuck'' in a new droplet structure which can be made to revert back to bipolar with high voltage pulses or with heat.

Development of a High-speed Electromagnetic Repulsion Mechanism for High-voltage Vacuum Circuit Breakers

NASA Astrophysics Data System (ADS)

Tsukima, Mitsuru; Takeuchi, Toshie; Koyama, Kenichi; Yoshiyasu, Hajimu

This paper presents a design and testing of a new high-speed electromagnetic driving mechanism for a high-voltage vacuum circuit breaker (VCB). This mechanism is based on a high-speed electromagnetic repulsion and a permanent magnet spring (PMS). This PMS is introduced instead of the conventional disk spring due to its low spring energy and more suitable force characteristics for VCB application. The PMS has been optimally designed by the 3d non-linear finite-elements magnetic field analysis and investigated its internal friction and eddy-current effect. Furthermore, we calculated the dynamic of this mechanism coupling with the electromagnetic field and circuit analysis, in order to satisfy the operating characteristics—contact velocity, response time and so on, required for the high-speed VCB. A prototype VCB, which was built based on the above analysis shows sufficient operating performance. Finally, the short circuit interruption tests were carried out with this prototype breaker, and we have been able to verify its satisfying performance.

A nanoscale piezoelectric transformer for low-voltage transistors.

PubMed

Agarwal, Sapan; Yablonovitch, Eli

2014-11-12

A novel piezoelectric voltage transformer for low-voltage transistors is proposed. Placing a piezoelectric transformer on the gate of a field-effect transistor results in the piezoelectric transformer field-effect transistor that can switch at significantly lower voltages than a conventional transistor. The piezoelectric transformer operates by using one piezoelectric to squeeze another piezoelectric to generate a higher output voltage than the input voltage. Multiple piezoelectrics can be used to squeeze a single piezoelectric layer to generate an even higher voltage amplification. Coupled electrical and mechanical modeling in COMSOL predicts a 12.5× voltage amplification for a six-layer piezoelectric transformer. This would lead to more than a 150× reduction in the power needed for communications.

The Influence of Current Density and Magnetic Field Topography in Optimizing the Performance, Divergence, and Plasma Oscillations of High Specific Impulse Hall Thrusters

NASA Technical Reports Server (NTRS)

Hofer, Richard R.; Jankovsky, Robert S.

2003-01-01

Recent studies of xenon Hall thrusters have shown peak efficiencies at specific impulses of less than 3000 s. This was a consequence of modern Hall thruster magnetic field topographies, which have been optimized for 300 V discharges. On-going research at the NASA Glenn Research Center is investigating this behavior and methods to enhance thruster performance. To conduct these studies, a laboratory model Hall thruster that uses a pair of trim coils to tailor the magnetic field topography for high specific impulse operation has been developed. The thruster-the NASA-173Mv2 was tested to determine how current density and magnetic field topography affect performance, divergence, and plasma oscillations at voltages up to 1000 V. Test results showed there was a minimum current density and optimum magnetic field topography at which efficiency monotonically increased with voltage. At 1000 V, 10 milligrams per second the total specific impulse was 3390 s and the total efficiency was 60.8%. Plume divergence decreased at 400-1000 V, but increased at 300-400 V as the result of plasma oscillations. The dominant oscillation frequency steadily increased with voltage, from 14.5 kHz at 300 V, to 22 kHz at 1000 V. An additional oscillatory mode in the 80-90 kHz frequency range began to appear above 500 V. The use of trim coils to modify the magnetic field improved performance while decreasing plume divergence and the frequency and magnitude of plasma oscillations.

The arcing rate for a High Voltage Solar Array - Theory, experiment and predictions

NASA Technical Reports Server (NTRS)

Hastings, Daniel E.; Cho, Mengu; Kuninaka, Hitoshi

1992-01-01

All solar arrays have biased surfaces which can be exposed to the space environment. It has been observed that when the array bias is less than a few hundred volts negative then the exposed conductive surfaces may undergo arcing in the space plasma. A theory for arcing is developed on these high voltage solar arrays which ascribes the arcing to electric field runaway at the interface of the plasma, conductor and solar cell dielectric. Experiments were conducted in the laboratory for the High Voltage Solar Array (HVSA) experiment which will fly on the Japanese Space Flyer Unit (SFU) in 1994. The theory was compared in detail to the experiment and shown to give a reasonable explanation for the data. The combined theory and ground experiments were then used to develop predictions for the SFU flight.

Arcing rates for High Voltage Solar Arrays - Theory, experiment, and predictions

NASA Technical Reports Server (NTRS)

Hastings, Daniel E.; Cho, Mengu; Kuninaka, Hitoshi

1992-01-01

All solar arrays have biased surfaces that can be exposed to the space environment. It has been observed that when the array bias is less than a few hundred volts negative, then the exposed conductive surfaces may undergo arcing in the space plasma. A theory for arcing is developed on these high voltage solar arrays that ascribes the arcing to electric field runaway at the interface of the plasma, conductor, and solar cell dielectric. Experiments were conducted in the laboratory for the High Voltage Solar Array experiment that will fly on the Japanese Space Flyer Unit (SFU) in 1994. The theory was compared in detail with the experiment and shown to give a reasonable explanation for the data. The combined theory and ground experiments were then used to develop predictions for the SFU flight.

Low-voltage high-performance organic thin film transistors with a thermally annealed polystyrene/hafnium oxide dielectric

NASA Astrophysics Data System (ADS)

Wang, Ying; Acton, Orb; Ting, Guy; Weidner, Tobias; Ma, Hong; Castner, David G.; Jen, Alex K.-Y.

2009-12-01

Low-voltage pentacene-based organic thin film transistors (OTFTs) are demonstrated with polystyrene (PS)/hafnium oxide (HfOx) hybrid dielectrics. Thermal annealing of PS films on HfOx at 120 °C (PS-120) induces a flatter orientation of the phenyl groups (tilt angle 65°) at the surface compared to PS films without annealing (PS-RT) (tilt angle 31°). The flatter phenyl group orientation leads to better matching of surface energy between pentacene and PS. Pentacene deposited on PS-120 display higher quality thin films with larger grain sizes and higher crystallinity. Pentacene OTFTs with PS-120/HfOx hybrid dielectrics can operate at low-voltage (<3 V) with high field-effect mobilities (1 cm2/V s), high on/off current ratios (106), and low subthreshold slopes (100 mV/dec).

Method to Remove Particulate Matter from Dusty Gases at Low Pressures

NASA Technical Reports Server (NTRS)

Calle, Carlos; Clements, J. Sid

2012-01-01

Future human exploration of Mars will rely on local Martian resources to reduce the mass, cost, and risk of space exploration launched from Earth. NASA's In Situ Resource Utilization (ISRU) Project seeks to produce mission consumables from local Martian resources, such as atmospheric gas. The Martian atmosphere, however, contains dust particles in the 2-to-10 -micrometer range. These dust particles must be removed before the Martian atmospheric gas can be processed. The low pressure of the Martian atmosphere, at 5 to 10 mbars, prevents the development of large voltages required for a standard electrostatic precipitator. If the voltage is increased too much, the corona transitions into a glow/streamer discharge unsuitable for the operation of a precipitator. If the voltage is not large enough, the dust particles are not sufficiently charged and the field is not strong enough to drive the particles to the collector. A method using electrostatic fields has been developed to collect dust from gaseous environments at low pressures, specifically carbon dioxide at pressures around 5 to 10 mbars. This method, commonly known as electrostatic precipitation, is a mature technology in air at one atmosphere. In this case, the high voltages required for the method to work can easily be achieved. However, in carbon dioxide at low pressures, such as those found on Mars, large voltages are not possible. The innovation reported here consists of two concentric cylindrical electrodes set at specific potential difference that generate an electric field that produces a corona capable of imparting an electrostatic charge to the incoming dust particles. The strength of the field is carefully balanced so as to produce a stable charging corona at 5 to 10 mbars, and is also capable of imparting a force to the particles that drives them to the collecting electrode. There are only two possible ways that dust can be removed from Martian atmospheric gas intakes: with this electrostatic precipitator design, and with the use of filters. However, filters require upstream compression of the gas to be treated because the atmospheric pressure on Mars is too close to vacuum to use a vacuum pump downstream to the filter to draw the gas through the filter. The electrostatic precipitator is the best and more efficient solution for this environment. No other precipitator designs have been developed for the environment of Mars due to the challenges of the low atmospheric pressure. Dust particles are charged using corona generation around the high-voltage discharge electrode, which ionizes gas molecules. Since the atmospheric gas intakes for the ISRU processing chambers will likely be cylindrical, cylindrical precipitator geometry was chosen. The electrostatic precipitator design presented here removes simulated Martian dust particles in the required range in a simulated Martian atmospheric environment. The current-voltage (I-V) characteristic curves taken for the nine precipitator configurations at 9 mbars of pressure showed that a cylindrical collecting electrode 7.0 cm in diameter with a concentric positive high voltage electrode 100 m thick provides the best range of voltage and charging corona current. This precipitator design is effective for the size of the dust particles expected in the Martian atmosphere. Mass determination, as well as microscopic images and particle size distributions of dust collected on a silicon wafer placed directly below the precipitator with the field on and off, showed excellent initial results.

Current–voltage characteristics of high-voltage 4H-SiC p{sup +}–n{sub 0}–n{sup +} diodes in the avalanche breakdown mode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Samsonova, T. P.

p{sup +}–n{sub 0}–n{sup +} 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm{sup 2}. It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10{sup –2} Ω cm{sup 2}), the electron drift velocity in the n{sub 0} base at electric fields higher than 10{sup 6} V/cm (7.8 × 10{sup 6} cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10{sup –4} K{sup –1}).

Current-voltage characteristics influenced by the nanochannel diameter and surface charge density in a fluidic field-effect-transistor.

PubMed

Singh, Kunwar Pal; Guo, Chunlei

2017-06-21

The nanochannel diameter and surface charge density have a significant impact on current-voltage characteristics in a nanofluidic transistor. We have simulated the effect of the channel diameter and surface charge density on current-voltage characteristics of a fluidic nanochannel with positive surface charge on its walls and a gate electrode on its surface. Anion depletion/enrichment leads to a decrease/increase in ion current with gate potential. The ion current tends to increase linearly with gate potential for narrow channels at high surface charge densities and narrow channels are more effective to control the ion current at high surface charge densities. The current-voltage characteristics are highly nonlinear for wide channels at low surface charge densities and they show different regions of current change with gate potential. The ion current decreases with gate potential after attaining a peak value for wide channels at low values of surface charge densities. At low surface charge densities, the ion current can be controlled by a narrow range of gate potentials for wide channels. The current change with source drain voltage shows ohmic, limiting and overlimiting regions.

A study of junction effect transistors and their roles in carbon nanotube field emission cathodes in compact pulsed power applications

NASA Astrophysics Data System (ADS)

Shui, Qiong

This thesis is focusing on a study of junction effect transistors (JFETs) in compact pulsed power applications. Pulsed power usually requires switches with high hold-off voltage, high current, low forward voltage drop, and fast switching speed. 4H-SiC, with a bandgap of 3.26 eV (The bandgap of Si is 1.12eV) and other physical and electrical superior properties, has gained much attention in high power, high temperature and high frequency applications. One topic of this thesis is to evaluate if 4H-SiC JFETs have a potential to replace gas phase switches to make pulsed power system compact and portable. Some other pulsed power applications require cathodes of providing stable, uniform, high electron-beam current. So the other topic of this research is to evaluate if Si JFET-controlled carbon nanotube field emitter cold cathode will provide the necessary e-beam source. In the topic of "4H-SiC JFETs", it focuses on the design and simulation of a novel 4H-SiC normally-off VJFET with high breakdown voltage using the 2-D simulator ATLAS. To ensure realistic simulations, we utilized reasonable physical models and the established parameters as the input into these models. The influence of key design parameters were investigated which would extend pulsed power limitations. After optimizing the key design parameters, with a 50-mum drift region, the predicted breakdown voltage for the VJFET is above 8kV at a leakage current of 1x10-5A/cm2 . The specific on-state resistance is 35 mO·cm 2 at VGS = 2.7 V, and the switching speed is several ns. The simulation results suggest that the 4H-SiC VJFET is a potential candidate for improving switching performance in repetitive pulsed power applications. To evaluate the 4H-SiC VJFETs in pulsed power circuits, we extracted some circuit model parameters from the simulated I-V curves. Those parameters are necessary for circuit simulation program such as SPICE. This method could be used as a test bench without fabricating the devices to minimize the unnecessary cost. As an extended research of 4H-SiC devices, Metal-Insulator-SiC (MIS) structures were utilized to evaluate the high dielectric constant materials---TiO 2 and Al2O3, as possible gate dielectrics for SiC devices. TiO2 and Al2O3 were chosen because of their high dielectric constants and bandgap energies as well as the acceptance of Ti and Al in most modern CMOS fabrication facilities. MIS devices were fabricated and both their I-V and C-V characteristics were measured and discussed. Our research showed that Al2O3 deposited by e-beam evaporation could be considered as a promising material among the gate insulators for high power SiC devices. In the topic of "Si JFET-controlled carbon nanotube field emitter cathode arrays", stability, controllability and lifetime are the main issues waiting to be addressed before field emitters find their wide applications. The ideas of connecting Si or metal field emitters with external MOSFETs or built-in active devices were attempted by other researchers, and those devices showed effectiveness in controlling and stabilizing the emission current. We presented the design, simulation, and the fabrication of Si JFETs monolithically integrated with CNTs field emitters. The Si JFET was designed to control and improve the emission of carbon nanotube field emitter arrays. Its electrical characteristics were simulated by the device simulator ATLAS. The fabrication process was developed to be compatible with the last step of growing multiwalled carbon nanotubes at 700°C. Carbon nanotubes field emitters were grown by PECVD (Plasma Enhanced Chemical Vapor Deposition). Preliminary field emission tests were conducted with 50 x 50 emitter arrays, with a resultant emission current of 3 muA (˜40 mA/cm2) at an extraction gate voltage of 50 V and an anode voltage of 300 V. Experimental data shows the linear relationship between ln(I/V2) and l/V consistent with Fowler-Nordheim electron tunneling. Some challenging issues were also discussed.

Electro-optical voltage sensor head

DOEpatents

Woods, Gregory K.

1998-01-01

A miniature electro-optic voltage sensor system capable of accurate operation at high voltages. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

Electro-optical voltage sensor head

DOEpatents

Woods, G.K.

1998-03-24

A miniature electro-optic voltage sensor system capable of accurate operation at high voltages is disclosed. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam`s polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured. 6 figs.

Electro-optic voltage sensor with Multiple Beam Splitting

DOEpatents

Woods, Gregory K.; Renak, Todd W.; Crawford, Thomas M.; Davidson, James R.

2000-01-01

A miniature electro-optic voltage sensor system capable of accurate operation at high voltages without use of the dedicated voltage dividing hardware. The invention achieves voltage measurement without significant error contributions from neighboring conductors or environmental perturbations. The invention employs a transmitter, a sensor, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor. Within the sensor the beam undergoes the Pockels electro-optic effect. The electro-optic effect produces a modulation of the beam's polarization, which is in turn converted to a pair of independent conversely-amplitude-modulated signals, from which the voltage of the E-field is determined by the signal processor. The use of converse AM signals enables the signal processor to better distinguish signal from noise. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

Low-voltage-operated organic one-time programmable memory using printed organic thin-film transistors and antifuse capacitors.

PubMed

Jung, Soon-Won; Na, Bock Soon; Park, Chan Woo; Koo, Jae Bon

2014-11-01

We demonstrate an organic one-time programmable memory cell formed entirely at plastic-compatible temperatures. All the processes are performed at below 130 degrees C. Our memory cell consists of a printed organic transistor and an organic capacitor. Inkjet-printed organic transistors are fabricated by using high-k polymer dielectric blends comprising poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl methacrylate) (PMMA) for low-voltage operation. P(NDI2OD-T2) transistors have a high field-effect mobility of 0.2 cm2/Vs and a low operation gate voltage of less than 10 V. The operation voltage effectively decreases owing to the high permittivity of the P(VDF-TrFE):PMMA blended film. The data in the memory cell are programmed by electrically breaking the organic capacitor. The organic capacitor acts like an antifuse capacitor, because it is initially open, and it becomes permanently short-circuited by applying a high voltage. The organic memory cells are programmed with 4 V, and they are read out with 2 V. The memory data are read out by sensing the current in the memory cell. The printed organic one-time programmable memory is suitable for applications storing small amount of data, such as low-cost radio-frequency identification (RFID) tag.

Statistical characteristics of transient enclosure voltage in ultra-high-voltage gas-insulated switchgear

NASA Astrophysics Data System (ADS)

Cai, Yuanji; Guan, Yonggang; Liu, Weidong

2017-06-01

Transient enclosure voltage (TEV), which is a phenomenon induced by the inner dielectric breakdown of SF6 during disconnector operations in a gas-insulated switchgear (GIS), may cause issues relating to shock hazard and electromagnetic interference to secondary equipment. This is a critical factor regarding the electromagnetic compatibility of ultra-high-voltage (UHV) substations. In this paper, the statistical characteristics of TEV at UHV level are collected from field experiments, and are analyzed and compared to those from a repeated strike process. The TEV waveforms during disconnector operations are recorded by a self-developed measurement system first. Then, statistical characteristics, such as the pulse number, duration of pulses, frequency components, magnitude and single pulse duration, are extracted. The transmission line theory is introduced to analyze the TEV and is validated by the experimental results. Finally, the relationship between the TEV and the repeated strike process is analyzed. This proves that the pulse voltage of the TEV is proportional to the corresponding breakdown voltage. The results contribute to the definition of the standard testing waveform of the TEV, and can aid the protection of electronic devices in substations by minimizing the threat of this phenomenon.

Electron refrigeration in hybrid structures with spin-split superconductors

NASA Astrophysics Data System (ADS)

Rouco, M.; Heikkilä, T. T.; Bergeret, F. S.

2018-01-01

Electron tunneling between superconductors and normal metals has been used for an efficient refrigeration of electrons in the latter. Such cooling is a nonlinear effect and usually requires a large voltage. Here we study the electron cooling in heterostructures based on superconductors with a spin-splitting field coupled to normal metals via spin-filtering barriers. The cooling power shows a linear term in the applied voltage. This improves the coefficient of performance of electron refrigeration in the normal metal by shifting its optimum cooling to lower voltage, and also allows for cooling the spin-split superconductor by reverting the sign of the voltage. We also show how tunnel coupling spin-split superconductors with regular ones allows for a highly efficient refrigeration of the latter.

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qi, Meng; Zhao, Yuning; Yan, Xiaodong

2015-12-07

Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

Stability of field emission current from porous n-GaAs(110)

NASA Astrophysics Data System (ADS)

Tondare, V. N.; Naddaf, M.; Bhise, A. B.; Bhoraskar, S. V.; Joag, D. S.; Mandale, A. B.; Sainkar, S. R.

2002-02-01

Field electron emission from porous GaAs has been investigated. The emitter was prepared by anodic etching of n-GaAs (110) in 0.1 M HCl solution. The as-etched porous GaAs shows nonlinear Fowler-Nordheim (FN) characteristics, with a low onset voltage. The emitter, after operating for 6 h at the residual gas pressure of 1×10-8 mbar, shows a linear FN characteristics with a relatively high onset voltage and poor field emission current stability as compared to the as-etched emitter. The change in the behavior was attributed to the residual gas ion bombardment during field electron emission. X-ray photoelectron spectroscopic investigations were carried out on as-etched sample and the one which was studied for field emission. The studies indicate that the as-etched surface contains As2O3 and the surface after field electron emission for about 6 h becomes gallium rich. The presence of As2O3 seems to be a desirable feature for the stable field emission current.

Structure-property relationships in an Al matrix Ca nanofilamentary composite conductor with potential application in high-voltage power transmission

NASA Astrophysics Data System (ADS)

Tian, Liang

This study investigated the processing-structure-properties relationships in an Al/Ca composites using both experiments and modeling/simulation. A particular focus of the project was understanding how the strength and electrical conductivity of the composite are related to its microstructure in the hope that a conducting material with light weight, high strength, and high electrical conductivity can be developed to produce overhead high-voltage power transmission cables. The current power transmission cables (e.g., Aluminum Conductor Steel Reinforced (ACSR)) have acceptable performance for high-voltage AC transmission, but are less well suited for high-voltage DC transmission due to the poorly conducting core materials that support the cable weight. This Al/Ca composite was produced by powder metallurgy and severe plastic deformation by extrusion and swaging. The fine Ca metal powders have been produced by centrifugal atomization with rotating liquid oil quench bath, and a detailed study about the atomization process and powder characteristics has been conducted. The microstructure of Al/Ca composite was characterized by electron microscopy. Microstructure changes at elevated temperature were characterized by thermal analysis and indirect resistivity tests. The strength and electrical conductivity were measured by tensile tests and four-point probe resistivity tests. Predicting the strength and electrical conductivity of the composite was done by micro-mechanics-based analytical modeling. Microstructure evolution was studied by mesoscale-thermodynamics-based phase field modeling and a preliminary atomistic molecular dynamics simulation. The application prospects of this composite was studied by an economic analysis. This study suggests that the Al/Ca (20 vol. %) composite shows promise for use as overhead power transmission cables. Further studies are needed to measure the corrosion resistance, fatigue properties and energized field performance of this composite.

Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3} oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhowmik, R. N., E-mail: rnbhowmik.phy@pondiuni.edu.in; Vijayasri, G.

2015-06-15

We have studied current-voltage (I-V) characteristics of α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3}, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling.more » The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔV{sub P}) 0.345(± 0.001) V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (∼500-700%), magnetoresistance (70-135 %) and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.« less

Automated System Tests High-Power MOSFET's

NASA Technical Reports Server (NTRS)

Huston, Steven W.; Wendt, Isabel O.

1994-01-01

Computer-controlled system tests metal-oxide/semiconductor field-effect transistors (MOSFET's) at high voltages and currents. Measures seven parameters characterizing performance of MOSFET, with view toward obtaining early indication MOSFET defective. Use of test system prior to installation of power MOSFET in high-power circuit saves time and money.

Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Omura, Yasuhisa; Mori, Yoshiaki; Sato, Shingo; Mallik, Abhijit

2018-04-01

This paper discusses the role of trap-assisted-tunneling process in controlling the ON- and OFF-state current levels and its impacts on the current-voltage characteristics of a tunnel field-effect transistor. Significant impacts of high-density traps in the source region are observed that are discussed in detail. With regard to recent studies on isoelectronic traps, it has been discovered that deep level density must be minimized to suppress the OFF-state leakage current, as is well known, whereas shallow levels can be utilized to control the ON-state current level. A possible mechanism is discussed based on simulation results.

A normally-off fully AlGaN HEMT with high breakdown voltage and figure of merit for power switch applications

NASA Astrophysics Data System (ADS)

Ebrahimi, Behzad; Asad, Mohsen

2015-07-01

In this paper, we propose a fully AlGaN high electron mobility (HEMT) in which the gate electrode, the barrier and the channel are all AlGaN. The p-type AlGaN gate facilitates the normally-off operation to be compatible with the state-of-the-art power amplifiers. In addition, the AlGaN channel increases the breakdown voltage (VBR) to 598 V due to the higher breakdown field of AlGaN compared to GaN. To assess the efficiency of the proposed structure, its characteristics are compared with the conventional and recently proposed structures. The two-dimensional device simulation results show that the proposed structure has the highest threshold voltage (Vth) and the VBR with the moderately low ON-resistance (RON). These features lead to the highest figure of merit (2.49 × 1012) among the structures which is 83%, 59%, 47% and 49% more than those of the conventional, with a field plate, AlGaN gate and AlGaN channel structures, respectively.

Thermodynamics and instability of dielectric elastomer (Conference Presentation)

NASA Astrophysics Data System (ADS)

Liu, Liwu; Liu, Yanju; Leng, Jinsong; Mu, Tong

2017-04-01

Dielectric elastomer is a kind of typical soft active material. It can deform obviously when subjected to an external voltage. When a dielectric elastomer with randomly oriented dipoles is subject to an electric field, the dipoles will rotate to and align with the electric field. The polarization of the dielectric elastomer may be saturated when the voltage is high enough. When subjected to a mechanical force, the end-to-end distance of each polymer chain, which has a finite contour length, will approach the finite value, reaching a limiting stretch. On approaching the limiting stretch, the elastomer stiffens steeply. Here, we develop a thermodynamic constitutive model of dielectric elastomers undergoing polarization saturation and strain-stiffening, and then investigate the stability (electromechanical stability, snap-through stability) and voltage induced deformation of dielectric elastomers. Analytical solution has been obtained and it reveals the marked influence of the extension limit and polarization saturation limit on its instability. The developed thermodynamic constitutive model and simulation results would be helpful in future to the research of dielectric elastomer based high-performance transducers.

Addressable multi-nozzle electrohydrodynamic jet printing with high consistency by multi-level voltage method

NASA Astrophysics Data System (ADS)

Pan, Yanqiao; Huang, YongAn; Guo, Lei; Ding, Yajiang; Yin, Zhouping

2015-04-01

It is critical and challenging to achieve the individual jetting ability and high consistency in multi-nozzle electrohydrodynamic jet printing (E-jet printing). We proposed multi-level voltage method (MVM) to implement the addressable E-jet printing using multiple parallel nozzles with high consistency. The fabricated multi-nozzle printhead for MVM consists of three parts: PMMA holder, stainless steel capillaries (27G, outer diameter 400 μm) and FR-4 extractor layer. The key of MVM is to control the maximum meniscus electric field on each nozzle. The individual jetting control can be implemented when the rings under the jetting nozzles are 0 kV and the other rings are 0.5 kV. The onset electric field for each nozzle is ˜3.4 kV/mm by numerical simulation. Furthermore, a series of printing experiments are performed to show the advantage of MVM in printing consistency than the "one-voltage method" and "improved E-jet method", by combination with finite element analyses. The good dimension consistency (274μm, 276μm, 280μm) and position consistency of the droplet array on the hydrophobic Si substrate verified the enhancements. It shows that MVM is an effective technique to implement the addressable E-jet printing with multiple parallel nozzles in high consistency.

Temporal and voltage stress stability of high performance indium-zinc-oxide thin film transistors

NASA Astrophysics Data System (ADS)

Song, Yang; Katsman, Alexander; Butcher, Amy L.; Paine, David C.; Zaslavsky, Alexander

2017-10-01

Thin film transistors (TFTs) based on transparent oxide semiconductors, such as indium zinc oxide (IZO), are of interest due to their improved characteristics compared to traditional a-Si TFTs. Previously, we reported on top-gated IZO TFTs with an in-situ formed HfO2 gate insulator and IZO active channel, showing high performance: on/off ratio of ∼107, threshold voltage VT near zero, extracted low-field mobility μ0 = 95 cm2/V·s, and near-perfect subthreshold slope at 62 mV/decade. Since device stability is essential for technological applications, in this paper we report on the temporal and voltage stress stability of IZO TFTs. Our devices exhibit a small negative VT shift as they age, consistent with an increasing carrier density resulting from an increasing oxygen vacancy concentration in the channel. Under gate bias stress, freshly annealed TFTs show a negative VT shift during negative VG gate bias stress, while aged (>1 week) TFTs show a positive VT shift during negative VG stress. This indicates two competing mechanisms, which we identify as the field-enhanced generation of oxygen vacancies and the field-assisted migration of oxygen vacancies, respectively. A simplified kinetic model of the vacancy concentration evolution in the IZO channel under electrical stress is provided.

Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Tsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Ho, Szu-Han; Chen, Ching-En; Chen, Hua-Mao; Tseng, Tseung-Yuen; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung

2013-09-01

This work investigates the channel hot carrier (CHC) effect in HfO2/Ti1-xNx p-channel metal oxide semiconductor field effect transistors (p-MOSFETs). Generally, the subthreshold swing (S.S.) should increase during CHC stress (CHCS), since interface states will be generated near the drain side under high electric field due to drain voltage (Vd). However, our experimental data indicate that S.S. has no evident change under CHCS, but threshold voltage (Vth) shifts positively. This result can be attributed to hot carrier injected into high-k dielectric near the drain side. Meanwhile, it is surprising that such Vth degradation is not observed in the saturation region during stress. Therefore, drain-induced-barrier-lowering (DIBL) as a result of CHC-induced electron trapping is proposed to explain the different Vth behaviors in the linear and saturation regions. Additionally, the influence of different nitrogen concentrations in HfO2/Ti1-xNx p-MOSFETs on CHCS is also investigated in this work. Since nitrogen diffuses to SiO2/Si interface induced pre-Nit occurring to degrades channel mobility during the annealing process, a device with more nitrogen shows slightly less impact ionization, leading to insignificant charge trapping-induced DIBL behavior.

Physical processes in high field insulating liquid conduction

NASA Astrophysics Data System (ADS)

Mazarakis, Michael; Kiefer, Mark; Leckbee, Joshua; Anderson, Delmar; Wilkins, Frank; Obregon, Robert

2017-10-01

In the power grid transmission where a large amount of energy is transmitted to long distances, High Voltage DC (HVDC) transmission of up to 1MV becomes more attractive since is more efficient than the counterpart AC. However, two of the most difficult problems to solve are the cable connections to the high voltage power sources and their insulation from the ground. The insulating systems are usually composed of transformer oil and solid insulators. The oil behavior under HVDC is similar to that of a weak electrolyte. Its behavior under HVDC is dominated more by conductivity than dielectric constant. Space charge effects in the oil bulk near high voltage electrodes and impeded plastic insulators affect the voltage oil hold-off. We have constructed an experimental facility where we study the oil and plastic insulator behavior in an actual HVDC System. Experimental results will be presented and compared with the present understanding of the physics governing the oil behavior under very high electrical stresses. Sandia National Laboratories managed and operated by National Technology and Engineering Solutions of Sandia, LLC., a wholly owned subsidiary of Honeywell International, Inc., for the U.S. D.O.E., NNSA under contract DE-NA-0003525.

The eGo grid model: An open source approach towards a model of German high and extra-high voltage power grids

NASA Astrophysics Data System (ADS)

Mueller, Ulf Philipp; Wienholt, Lukas; Kleinhans, David; Cussmann, Ilka; Bunke, Wolf-Dieter; Pleßmann, Guido; Wendiggensen, Jochen

2018-02-01

There are several power grid modelling approaches suitable for simulations in the field of power grid planning. The restrictive policies of grid operators, regulators and research institutes concerning their original data and models lead to an increased interest in open source approaches of grid models based on open data. By including all voltage levels between 60 kV (high voltage) and 380kV (extra high voltage), we dissolve the common distinction between transmission and distribution grid in energy system models and utilize a single, integrated model instead. An open data set for primarily Germany, which can be used for non-linear, linear and linear-optimal power flow methods, was developed. This data set consists of an electrically parameterised grid topology as well as allocated generation and demand characteristics for present and future scenarios at high spatial and temporal resolution. The usability of the grid model was demonstrated by the performance of exemplary power flow optimizations. Based on a marginal cost driven power plant dispatch, being subject to grid restrictions, congested power lines were identified. Continuous validation of the model is nescessary in order to reliably model storage and grid expansion in progressing research.

A novel concept of fault current limiter based on saturable core in high voltage DC transmission system

NASA Astrophysics Data System (ADS)

Yuan, Jiaxin; Zhou, Hang; Gan, Pengcheng; Zhong, Yongheng; Gao, Yanhui; Muramatsu, Kazuhiro; Du, Zhiye; Chen, Baichao

2018-05-01

To develop mechanical circuit breaker in high voltage direct current (HVDC) system, a fault current limiter is required. Traditional method to limit DC fault current is to use superconducting technology or power electronic devices, which is quite difficult to be brought to practical use under high voltage circumstances. In this paper, a novel concept of high voltage DC transmission system fault current limiter (DCSFCL) based on saturable core was proposed. In the DCSFCL, the permanent magnets (PM) are added on both up and down side of the core to generate reverse magnetic flux that offset the magnetic flux generated by DC current and make the DC winding present a variable inductance to the DC system. In normal state, DCSFCL works as a smoothing reactor and its inductance is within the scope of the design requirements. When a fault occurs, the inductance of DCSFCL rises immediately and limits the steepness of the fault current. Magnetic field simulations were carried out, showing that compared with conventional smoothing reactor, DCSFCL can decrease the high steepness of DC fault current by 17% in less than 10ms, which verifies the feasibility and effectiveness of this method.

Evaluation of area strain response of dielectric elastomer actuator using image processing technique

NASA Astrophysics Data System (ADS)

Sahu, Raj K.; Sudarshan, Koyya; Patra, Karali; Bhaumik, Shovan

2014-03-01

Dielectric elastomer actuator (DEA) is a kind of soft actuators that can produce significantly large electric-field induced actuation strain and may be a basic unit of artificial muscles and robotic elements. Understanding strain development on a pre-stretched sample at different regimes of electrical field is essential for potential applications. In this paper, we report about ongoing work on determination of area strain using digital camera and image processing technique. The setup, developed in house consists of low cost digital camera, data acquisition and image processing algorithm. Samples have been prepared by biaxially stretched acrylic tape and supported between two cardboard frames. Carbon-grease has been pasted on the both sides of the sample, which will be compliant with electric field induced large deformation. Images have been grabbed before and after the application of high voltage. From incremental image area, strain has been calculated as a function of applied voltage on a pre-stretched dielectric elastomer (DE) sample. Area strain has been plotted with the applied voltage for different pre-stretched samples. Our study shows that the area strain exhibits nonlinear relationship with applied voltage. For same voltage higher area strain has been generated on a sample having higher pre-stretched value. Also our characterization matches well with previously published results which have been done with costly video extensometer. The study may be helpful for the designers to fabricate the biaxial pre-stretched planar actuator from similar kind of materials.

Characterization of breakdown behavior of diamond Schottky barrier diodes using impact ionization coefficients

NASA Astrophysics Data System (ADS)

Driche, Khaled; Umezawa, Hitoshi; Rouger, Nicolas; Chicot, Gauthier; Gheeraert, Etienne

2017-04-01

Diamond has the advantage of having an exceptionally high critical electric field owing to its large band gap, which implies its high ability to withstand high voltages. At this maximum electric field, the operation of Schottky barrier diodes (SBDs), as well as FETs, may be limited by impact ionization, leading to avalanche multiplication, and hence the devices may breakdown. In this study, three of the reported impact ionization coefficients for electrons, αn, and holes, αp, in diamond at room temperature (300 K) are analyzed. Experimental data on reverse operation characteristics obtained from two different diamond SBDs are compared with those obtained from their corresponding simulated structures. Owing to the crucial role played by the impact ionization rate in determining the carrier transport, the three reported avalanche parameters implemented affect the behavior not only of the breakdown voltage but also of the leakage current for the same structure.

A simple compact UHV and high magnetic field compatible inertial nanopositioner

NASA Astrophysics Data System (ADS)

Pang, Zongqiang; Li, Xiang; Xu, Lei; Rong, Zhou; Liu, Ruilan

2015-01-01

We present a novel simple piezoelectric nanopositioner which just has one piezoelectric scanner tube (PST) and one driving signal, using two short quartz rods and one BeCu spring which form a triangle to press the central shaft and can promise the nanopositioner's rigidity. Applying two pulse inverted voltage signals on the PST's outer and inner electrodes, respectively, according to the principle of piezoelectricity, the PST will elongate or contract suddenly while the central shaft will keep stationary for its inertance, so the central shaft will be sliding a distance relative to quartz rods and spring, and then withdraw the pulse voltages slowly, the central shaft will move upward or downward one step. The heavier of the central shaft, the better moving stability, so the nanopositioner has high output force. Due to its compactness and mechanical stability, it can be easily implanted into some extreme conditions, such as ultrahigh vacuum, ultralow temperature, and high magnetic field.

Ion Species Fractions in the Far-Field Plume of a High-Specific Impulse Hall Thruster

NASA Technical Reports Server (NTRS)

Hofer, Richard R.; Gallimore, Alec D.

2003-01-01

An ExB probe was used to measure the ion species fractions of Xe(+), Xe(2+), and Xe(3+) in the far-field plume of the NASA-173Mv2 laboratory-model Hall thruster. The thruster was operated at a constant xenon flow rate of 10 milligrams per second and discharge voltages of 300 to 900 V. The ExB probe was placed two meters downstream of the thruster exit plane on the thruster centerline. At a discharge voltage of 300 V, the species fractions of Xe(2+) and Xe(3+) were lower, but still consistent with, previous Hall thruster studies using other mass analyzers. Over discharge voltages of 300 to 900 V, the Xe(2+) species fractions increased from 0.04 to 0.12 and the Xe(3+) species fraction increased from 0.01 to 0.02.

Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

DOEpatents

Rehak, P.; Gatti, E.

1984-02-24

A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying functions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

DOEpatents

Rehak, Pavel; Gatti, Emilio

1987-01-01

A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

DOEpatents

Rehak, P.; Gatti, E.

1987-08-18

A semiconductor charge transport device and method for making same are disclosed, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution. 16 figs.

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

NASA Astrophysics Data System (ADS)

Ma, Jun; Matioli, Elison

2018-01-01

This letter reports lateral GaN-on-Si power Schottky barrier diodes (SBDs) with unprecedented voltage-blocking performance by integrating 3-dimensionally a hybrid of tri-anode and slanted tri-gate architectures in their anode. The hybrid tri-anode pins the voltage drop at the Schottky junction (VSCH), despite a large applied reverse bias, fixing the reverse leakage current (IR) of the SBD. Such architecture led to an ultra-low IR of 51 ± 5.9 nA/mm at -1000 V, in addition to a small turn-on voltage (VON) of 0.61 ± 0.03 V. The slanted tri-gate effectively distributes the electric field in OFF state, leading to a remarkably high breakdown voltage (VBR) of -2000 V at 1 μA/mm, constituting a significant breakthrough from existing technologies. The approach pursued in this work reduces the IR and increases the VBR without sacrificing the VON, which provides a technology for high-voltage SBDs, and unveils the unique advantage of tri-gates for advanced power applications.

High-Field Quench Behavior and Protection of $$Bi_2 Sr_2 Ca Cu_2 O_x$$ Coils: Minimum and Maximum Quench Detection Voltages

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shen, Tengming; Ye, Liyang; Turrioni, Daniele

Small insert coils have been built using a multifilamentary Bi2Sr2CaCu2Ox round wire, and characterized in background fields to explore the quench behaviors and limits of Bi2Sr2CaCu2Ox superconducting magnets, with an emphasis on assessing the impact of slow normal zone propagation on quench detection. Using heaters of various lengths to initiate a small normal zone, a coil was quenched safely more than 70 times without degradation, with the maximum coil temperature reaching 280 K. Coils withstood a resistive voltage of tens of mV for seconds without quenching, showing the high stability of these coils and suggesting that the quench detection voltagemore » shall be greater than 50 mV to not to falsely trigger protection. The hot spot temperature for the resistive voltage of the normal zone to reach 100 mV increases from ~40 K to ~80 K with increasing the operating wire current density Jo from 89 A/mm2 to 354 A/mm2 whereas for the voltage to reach 1 V, it increases from ~60 K to ~140 K, showing the increasing negative impact of slow normal zone propagation on quench detection with increasing Jo and the need to limit the quench detection voltage to < 1 V. These measurements, coupled with an analytical quench model, were used to access the impact of the maximum allowable voltage and temperature upon quench detection on the quench protection, assuming to limit the hot spot temperature to <300 K.« less

Al0 0.3Ga 0.7N PN diode with breakdown voltage >1600 V

DOE PAGES

Allerman, A. A.; Armstrong, A. M.; Fischer, A. J.; ...

2016-07-21

Demonstration of Al0 0.3Ga 0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm 2 was achieved under DC forward bias and a reverse leakage current <3 nA was measured for voltages <1200 V. The differential on-resistance of 16 mΩ cm 2 is limited by the lateral conductivity of the n-type contact layer requiredmore » by the front-surface contact geometry of the device. An effective critical electric field of 5.9 MV/cm was determined from the epilayer properties and the reverse current–voltage characteristics. To our knowledge, this is the first aluminium gallium nitride (AlGaN)-based PN diode exhibiting a breakdown voltage in excess of 1 kV. Finally, we note that a Baliga figure of merit (V br 2/R spec,on) of 150 MW/cm 2 found is the highest reported for an AlGaN PN diode and illustrates the potential of larger-bandgap AlGaN alloys for high-voltage devices.« less

Non-local detection of spin dynamics via spin rectification effect in yttrium iron garnet/SiO{sub 2}/NiFe trilayers near simultaneous ferromagnetic resonance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soh, Wee Tee, E-mail: a0046479@u.nus.edu; Ong, C. K.; Peng, Bin

2015-08-15

The spin rectification effect (SRE), a phenomenon that generates dc voltages from ac microwave fields incident onto a conducting ferromagnet, has attracted widespread attention due to its high sensitivity to ferromagnetic resonance (FMR) as well as its relevance to spintronics. Here, we report the non-local detection of yttrium iron garnet (YIG) spin dynamics by measuring SRE voltages from an adjacent conducting NiFe layer up to 200 nm thick. In particular, we detect, within the NiFe layer, SRE voltages stemming from magnetostatic surface spin waves (MSSWs) of the adjacent bulk YIG which are excited by a shorted coaxial probe. These non-localmore » SRE voltages within the NiFe layer that originates from YIG MSSWs are present even in 200 nm-thick NiFe films with a 50 nm thick SiO{sub 2} spacer between NiFe and YIG, thus strongly ruling out the mechanism of spin-pumping induced inverse spin Hall effect in NiFe as the source of these voltages. This long-range influence of YIG dynamics is suggested to be mediated by dynamic fields generated from YIG spin precession near YIG/NiFe interface, which interacts with NiFe spins near the simultaneous resonance of both spins, to generate a non-local SRE voltage within the NiFe layer.« less

On the difference between breakdown and quench voltages of argon plasma and its relation to 4p–4s atomic state transitions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Forati, Ebrahim, E-mail: forati@ieee.org; Piltan, Shiva; Sievenpiper, Dan, E-mail: dsievenpiper@ucsd.edu

Using a relaxation oscillator circuit, breakdown (V{sub BD}) and quench (V{sub Q}) voltages of a DC discharge microplasma between two needle probes are measured. High resolution modified Paschen curves are obtained for argon microplasmas including a quench voltage curve representing the voltage at which the plasma turns off. It is shown that for a point to point microgap (e.g., the microgap between two needle probes) which describes many realistic microdevices, neither Paschen's law applies nor field emission is noticeable. Although normally V{sub BD} > V{sub Q,} it is observed that depending on environmental parameters of argon, such as pressure and the drivingmore » circuitry, plasma can exist in a different state with equal V{sub BD} and V{sub Q.} Using emission line spectroscopy, it is shown that V{sub BD} and V{sub Q} are equal if the atomic excitation by the electric field dipole moment dominantly leads to one of the argon's metastable states (4P{sub 5} in our study)« less

Proofs for the Wave Theory of Plants

NASA Astrophysics Data System (ADS)

Wagner, Orvin E.

1997-03-01

Oscillatory behavior in plants. (2)Standing waves observed coming from probes equally spaced up tree trunks and freshly cut live wood samples. (3)Beat frequencies observed while applying AC voltages to plants. (4)Plant length quantization. (5)Plant growth angle and voltage quantization with respect to the gravitational field. (6)The measurement of plant frequences with a low frequency spectrum analyzer which correlate with the frequencies observed by other means such as by measuring plant lengths, considered as half wavelengths, and beat frequencies. (7)Voltages obtained from insulated, isolated from light, diode dies placed in slits in tree trunks. Diodes become relatively low impedance sources for voltages as high as eight volts. Diodes indicate charge separating longitudinal standing waves sweeping up and down a tree trunk. Longitudinal waves also indicated by plant structure. (8)The measured discrete wave velocities appear to be dependent on their direction of travel with respect to the gravitational field. These provide growth references for the plant and a wave guide affect. For references see Wagner Research Laboratory Web Page.

Combined electrical transport and capacitance spectroscopy of a MoS2-LiNbO3 field effect transistor

NASA Astrophysics Data System (ADS)

Michailow, Wladislaw; Schülein, Florian J. R.; Möller, Benjamin; Preciado, Edwin; Nguyen, Ariana E.; von Son, Gretel; Mann, John; Hörner, Andreas L.; Wixforth, Achim; Bartels, Ludwig; Krenner, Hubert J.

2017-01-01

We have measured both the current-voltage ( ISD - VGS ) and capacitance-voltage (C- VGS ) characteristics of a MoS2-LiNbO3 field effect transistor. From the measured capacitance, we calculate the electron surface density and show that its gate voltage dependence follows the theoretical prediction resulting from the two-dimensional free electron model. This model allows us to fit the measured ISD - VGS characteristics over the entire range of VGS . Combining this experimental result with the measured current-voltage characteristics, we determine the field effect mobility as a function of gate voltage. We show that for our device, this improved combined approach yields significantly smaller values (more than a factor of 4) of the electron mobility than the conventional analysis of the current-voltage characteristics only.

Voltage sensing systems and methods for passive compensation of temperature related intrinsic phase shift

DOEpatents

Davidson, James R.; Lassahn, Gordon D.

2001-01-01

A small sized electro-optic voltage sensor capable of accurate measurement of high levels of voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation into the sensor. A polarization beam displacer serves as a filter to separate the input beam into two beams with orthogonal linear polarizations. The beam displacer is oriented in such a way as to rotate the linearly polarized beams such that they enter a Pockels crystal at a preferred angle of 45 degrees. The beam displacer is therefore capable of causing a linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels electro-optic effect induces a differential phase shift on the major and minor axes of the input beam as it travels through the Pockels crystal, which causes the input beam to be elliptically polarized. A reflecting prism redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization representing the major and minor axes. In crystals that introduce a phase differential attributable to temperature, a compensating crystal is provided to cancel the effect of temperature on the phase differential of the input beam. The system may include a detector for converting the output beams into electrical signals, and a signal processor for determining the voltage based on an analysis of the output beams. The output beams are amplitude modulated by the frequency of the electric field and the amplitude of the output beams is proportional to the magnitude of the electric field, which is related to the voltage being measured.

Remnant field detector

DOEpatents

Visser, Age T.

1988-05-03

A method apparatus for qualitatively detecting remnant magnetic fields in matched pairs of magnet cores. Equal magnitude and oppositely oriented magnetic flux is induced in the magnet cores by oppositely wound primary windings and current source. Identically wound secondary windings generate output voltages in response to the induced flux. The output voltages generated should be of equal magnitude and opposite polarity if there is no remnant field in the cores. The output voltages will be unequal which is detected if either core has a remnant field.

Remnant field detector

DOEpatents

Visser, Age T.

1988-01-01

A method apparatus for qualitatively detecting remnant magnetic fields in matched pairs of magnet cores. Equal magnitude and oppositely oriented magnetic flux is induced in the magnet cores by oppositely wound primary windings and current source. Identically wound secondary windings generate output voltages in response to the induced flux. The output voltages generated should be of equal magnitude and opposite polarity if there is no remnant field in the cores. The output voltages will be unequal which is detected if either core has a remnant field.

Microwave detector

DOEpatents

Meldner, H.W.; Cusson, R.Y.; Johnson, R.M.

1985-02-08

A microwave detector is provided for measuring the envelope shape of a microwave pulse comprised of high-frequency oscillations. A biased ferrite produces a magnetization field flux that links a B-dot loop. The magnetic field of the microwave pulse participates in the formation of the magnetization field flux. High-frequency insensitive means are provided for measuring electric voltage or current induced in the B-dot loop. The recorded output of the detector is proportional to the time derivative of the square of the envelope shape of the microwave pulse.

Frequency and Voltage Dependence of the Dielectrophoretic Trapping of Short Lengths of DNA and dCTP in a Nanopipette

PubMed Central

Ying, Liming; White, Samuel S.; Bruckbauer, Andreas; Meadows, Lisa; Korchev, Yuri E.; Klenerman, David

2004-01-01

The study of the properties of DNA under high electric fields is of both fundamental and practical interest. We have exploited the high electric fields produced locally in the tip of a nanopipette to probe the motion of double- and single-stranded 40-mer DNA, a 1-kb single-stranded DNA, and a single-nucleotide triphosphate (dCTP) just inside and outside the pipette tip at different frequencies and amplitudes of applied voltages. We used dual laser excitation and dual color detection to simultaneously follow two fluorophore-labeled DNA sequences with millisecond time resolution, significantly faster than studies to date. A strong trapping effect was observed during the negative half cycle for all DNA samples and also the dCTP. This effect was maximum below 1 Hz and decreased with higher frequency. We assign this trapping to strong dielectrophoresis due to the high electric field and electric field gradient in the pipette tip. Dielectrophoresis in electrodeless tapered nanostructures has potential applications for controlled mixing and manipulation of short lengths of DNA and other biomolecules, opening new possibilities in miniaturized biological analysis. PMID:14747337

Heat transport in electrically aligned multiwalled carbon nanotubes dispersed in water

NASA Astrophysics Data System (ADS)

Cervantes-Alvarez, F.; Macias, J. D.; Alvarado-Gil, J. J.

2018-02-01

A modified Ångström method was used to determine the thermal diffusivity and thermal conductivity of aqueous dispersions of multiwalled carbon nanotubes as a function of their weight fraction concentration and in the presence of an externally applied electric field. Measurements were performed in planar samples, with a fixed thickness of 3.18 mm applying an AC voltage in the range from 0 to 70~V_RMS and for concentrations of carbon nanotubes from 0 to 2 wf%. It is shown that this field induces the formation of clusters followed by their alignment along the electric field, which can favor heat transfer in that direction. Heat transfer measurements show two regimes, in the first one under 0.5 wf%, voltages lower than 30~V_RMS are not strong enough to induce the adequate order of the carbon nanostructures, and as a consequence, thermal diffusivity of the dispersion remains close to the thermal diffusivity of water. In contrast for higher concentrations (above 1.5 wf%), 10~V_RMS are enough to get a good alignment. Above such thresholds of concentrations and voltages, thermal diffusivity and conductivity increase, when the electric field is increased, in such a way that for an applied voltage of 20~V_RMS and for a concentration of 1.5 wf%, an increase of 49% of the thermal conductivity was obtained. It is also shown that this approach exhibits limits, due to the fact that the electric-field induced structure, can act as a heating element at high electric field intensities and carbon nanotubes concentrations, which can induce convection and evaporation of the liquid matrix.

Experiments of a 100 kV-level pulse generator based on metal-oxide varistor

NASA Astrophysics Data System (ADS)

Cui, Yan-cheng; Wu, Qi-lin; Yang, Han-wu; Gao, Jing-ming; Li, Song; Shi, Cheng-yu

2018-03-01

This paper introduces the development and experiments of a 100 kV-level pulse generator based on a metal-oxide varistor (MOV). MOV has a high energy handling capacity and nonlinear voltage-current (V-I) characteristics, which makes it useful for high voltage pulse shaping. Circuit simulations based on the measured voltage-current characteristics of MOV verified the shaping concept and showed that a circuit containing a two-section pulse forming network (PFN) will result in better defined square pulse than a simple L-C discharging circuit. A reduced-scale experiment was carried out and the result agreed well with simulation prediction. Then a 100 kV-level pulse generator with multiple MOVs in a stack and a two-section pulse forming network (PFN) was experimented. A pulse with a voltage amplitude of 90 kV, rise time of about 50 ns, pulse width of 500 ns, and flat top of about 400 ns was obtained with a water dummy load of 50 Ω. The results reveal that the combination of PFN and MOV is a practical way to generate high voltage pulses with better flat top waveforms, and the load voltage is stable even if the load's impedance varies. Such pulse generator can be applied in many fields such as surface treatment, corona plasma generation, industrial dedusting, and medical disinfection.

High magnetic field test of bismuth Hall sensors for ITER steady state magnetic diagnostic.

PubMed

Ďuran, I; Entler, S; Kohout, M; Kočan, M; Vayakis, G

2016-11-01

Performance of bismuth Hall sensors developed for the ITER steady state magnetic diagnostic was investigated for high magnetic fields in the range ±7 T. Response of the sensors to the magnetic field was found to be nonlinear particularly within the range ±1 T. Significant contribution of the planar Hall effect to the sensors output voltage causing undesirable cross field sensitivity was identified. It was demonstrated that this effect can be minimized by the optimization of the sensor geometry and alignment with the magnetic field and by the application of "current-spinning technique."

Fluctuation spectra in the NASA Lewis bumpy-torus plasma

NASA Technical Reports Server (NTRS)

Singh, C. M.; Krawczonek, W. M.; Roth, J. R.; Hong, J. Y.; Powers, E. J.

1978-01-01

The electrostatic potential fluctuation spectrum in the NASA Lewis bumpy-torus plasma was studied with capacitive probes in the low pressure (high impedance) mode and in the high pressure (low impedance) mode. Under different operating conditions, the plasma exhibited electrostatic potential fluctuations (1) at a set of discrete frequencies, (2) at a continuum of frequencies, and (3) as incoherent high-frequency turbulence. The frequencies and azimuthal wave numbers were determined from digitally implemented autopower and cross-power spectra. The azimuthal dispersion characteristics of the unstable waves were examined by varying the electrode voltage, the polarity of the voltage, and the neutral background density at a constant magnetic field strength.

The progress of funnelling gun high voltage condition and beam test

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, E.; Ben-Zvi, I.; Gassner, D. M.

A prototype of a high average current polarized electron funneling gun as an eRHIC injector has been built at BNL. The gun was assembled and tested at Stangenes Incorporated. Two beams were generated from two GaAs photocathodes and combined by a switched combiner field. We observed the combined beams on a YAG crystal and measured the photocurrent by a Faraday cup. The gun has been shipped to Stony Brook University and is being tested there. In this paper we will describe the major components of the gun and recent beam test results. High voltage conditioning is discussed as well.

Simulations of momentum transfer process between solar wind plasma and bias voltage tethers of electric sail thruster

NASA Astrophysics Data System (ADS)

Xia, Guangqing; Han, Yajie; Chen, Liuwei; Wei, Yanming; Yu, Yang; Chen, Maolin

2018-06-01

The interaction between the solar wind plasma and the bias voltage of long tethers is the basic mechanism of the electric sail thruster. The momentum transfer process between the solar wind plasma and electric tethers was investigated using a 2D full particle PIC method. The coupled electric field distribution and deflected ion trajectory under different bias voltages were compared, and the influence of bias voltage on momentum transfer process was analyzed. The results show that the high potential of the bias voltage of long tethers will slow down, stagnate, reflect and deflect a large number of ions, so that ion cavities are formed in the vicinity of the tether, and the ions will transmit the axial momentum to the sail tethers to produce the thrust. Compared to the singe tether, double tethers show a better thrust performance.

Current-voltage characteristics of dc corona discharges in air between coaxial cylinders

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, Yuesheng, E-mail: yueshengzheng@fzu.edu.cn; Zhang, Bo, E-mail: shizbcn@tsinghua.edu.cn; He, Jinliang, E-mail: hejl@tsinghua.edu.cn

This paper presents the experimental measurement and numerical analysis of the current-voltage characteristics of dc corona discharges in air between coaxial cylinders. The current-voltage characteristics for both positive and negative corona discharges were measured within a specially designed corona cage. Then the measured results were fitted by different empirical formulae and analyzed by the fluid model. The current-voltage characteristics between coaxial cylinders can be expressed as I = C(U − U{sub 0}){sup m}, where m is within the range 1.5–2.0, which is similar to the point-plane electrode system. The ionization region has no significant effect on the current-voltage characteristic under a low corona current,more » while it will affect the distribution for the negative corona under a high corona current. The surface onset fields and ion mobilities were emphatically discussed.« less

Effects of various applied voltages on physical properties of TiO2 nanotubes by anodization method

NASA Astrophysics Data System (ADS)

Hoseinzadeh, T.; Ghorannevis, Z.; Ghoranneviss, M.; Sari, A. H.; Salem, M. K.

2017-09-01

Three steps anodization process is used to synthesize highly ordered and uniform multilayered titanium oxide (TiO2) nanotubes and effect of different anodization voltages are studied on their physical properties such as structural, morphological and optical. The crystalized structure of the synthesized tubes is investigated by X-ray diffractometer analysis. To study the morphology of the tubes, field emission scanning electron microscopy is used, which showed that the wall thicknesses and the diameters of the tubes are affected by the different anodization voltages. Moreover, optical studies performed by diffuse reflection spectra suggested that band gap of the TiO2 nanotubes are also changed by applying different anodization voltages. In this study using physical investigations, an optimum anodization voltage is obtained to synthesize the uniform crystalized TiO2 nanotubes with suitable diameter, wall thickness and optical properties.

A Model of Anode Sheath Potential Evolution in a Transverse Magnetic Field

NASA Astrophysics Data System (ADS)

Foster, John E.; Gallimore, Alec D.

1996-11-01

It has been conjectured that the growth in the magnitude of the anode fall voltage with changing transverse magnetic field is a function of the ratio of available transverse current to the discharge current. It has been postulated that at small values of this ratio, the anode fall voltage and thus the near-anode electric field increases in order to assure that the prescribed discharge is maintained.footnote H. Hugel, IEEE Tran. Plas. Sci., PS-8,4, 1980 In this present work, a model is presented which predicts the behavior of the anode fall voltage as a function of transverse magnetic field. The model attempts to explain why the anode fall voltage depends so strongly on this ratio. In addition, it is further shown that because of the current ratio's strong dependence on local electron number density, ultimately it is the changes in near-anode ionization processes with varying transverse magnetic field that control the anode fall voltage.

High voltage insulation of bushing for HTS power equipment

NASA Astrophysics Data System (ADS)

Kim, Woo-Jin; Choi, Jae-Hyeong; Kim, Sang-Hyun

2012-12-01

For the operation of high temperature superconducting (HTS) power equipments, it is necessary to develop insulating materials and high voltage (HV) insulation technology at cryogenic temperature of bushing. Liquid nitrogen (LN2) is an attractive dielectric liquid. Also, the polymer insulating materials are expected to be used as solid materials such as glass fiber reinforced plastic (GFRP), polytetra-fluoroethylene (PTFE, Teflon), Silicon (Si) rubber, aromatic polyamide (Nomex), EPDM/Silicon alloy compound (EPDM/Si). In this paper, the surface flashover characteristics of various insulating materials in LN2 are studied. These results are studied at both AC and impulse voltage under a non-uniform field. The use of GFRP and Teflon as insulation body for HTS bushing should be much desirable. Especially, GFRP is excellent material not only surface flashover characteristics but also mechanical characteristics at cryogenic temperature. The surface flashover is most serious problem for the shed design in LN2 and operation of superconducting equipments.

Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates

NASA Astrophysics Data System (ADS)

Moon, Sung-Woon; Twynam, John; Lee, Jongsub; Seo, Deokwon; Jung, Sungdal; Choi, Hong Goo; Shim, Heejae; Yim, Jeong Soon; Roh, Sungwon D.

2014-06-01

We present a reliable process and design technique for realizing high voltage AlGaN/GaN hetero-junction field effect transistors (HFETs) on Si substrates with very low and stable off-state leakage current characteristics. In this work, we have investigated the effects of the surface passivation layer, prepared by low pressure chemical vapor deposition (LPCVD) of silicon nitride (SiNx), and gate bus isolation design on the off-state leakage characteristics of metal-oxide-semiconductor (MOS) gate structure-based GaN HFETs. The surface passivated devices with gate bus isolation fully surrounding the source and drain regions showed extremely low off-state leakage currents of less than 20 nA/mm at 600 V, with very small variation. These techniques were successfully applied to high-current devices with 80-mm gate width, yielding excellent off-state leakage characteristics within a drain voltage range 0-700 V.

The Architecture Design of Detection and Calibration System for High-voltage Electrical Equipment

NASA Astrophysics Data System (ADS)

Ma, Y.; Lin, Y.; Yang, Y.; Gu, Ch; Yang, F.; Zou, L. D.

2018-01-01

With the construction of Material Quality Inspection Center of Shandong electric power company, Electric Power Research Institute takes on more jobs on quality analysis and laboratory calibration for high-voltage electrical equipment, and informationization construction becomes urgent. In the paper we design a consolidated system, which implements the electronic management and online automation process for material sampling, test apparatus detection and field test. In the three jobs we use QR code scanning, online Word editing and electronic signature. These techniques simplify the complex process of warehouse management and testing report transferring, and largely reduce the manual procedure. The construction of the standardized detection information platform realizes the integrated management of high-voltage electrical equipment from their networking, running to periodic detection. According to system operation evaluation, the speed of transferring report is doubled, and querying data is also easier and faster.

Structure and hydration of membranes embedded with voltage-sensing domains.

PubMed

Krepkiy, Dmitriy; Mihailescu, Mihaela; Freites, J Alfredo; Schow, Eric V; Worcester, David L; Gawrisch, Klaus; Tobias, Douglas J; White, Stephen H; Swartz, Kenton J

2009-11-26

Despite the growing number of atomic-resolution membrane protein structures, direct structural information about proteins in their native membrane environment is scarce. This problem is particularly relevant in the case of the highly charged S1-S4 voltage-sensing domains responsible for nerve impulses, where interactions with the lipid bilayer are critical for the function of voltage-activated ion channels. Here we use neutron diffraction, solid-state nuclear magnetic resonance (NMR) spectroscopy and molecular dynamics simulations to investigate the structure and hydration of bilayer membranes containing S1-S4 voltage-sensing domains. Our results show that voltage sensors adopt transmembrane orientations and cause a modest reshaping of the surrounding lipid bilayer, and that water molecules intimately interact with the protein within the membrane. These structural findings indicate that voltage sensors have evolved to interact with the lipid membrane while keeping energetic and structural perturbations to a minimum, and that water penetrates the membrane, to hydrate charged residues and shape the transmembrane electric field.

Structure and hydration of membranes embedded with voltage-sensing domains

PubMed Central

Krepkiy, Dmitriy; Mihailescu, Mihaela; Freites, J. Alfredo; Schow, Eric V.; Worcester, David L.; Gawrisch, Klaus; Tobias, Douglas; White, Stephen H.; Swartz, Kenton J.

2009-01-01

Despite the growing number of atomic-resolution membrane protein structures, direct structural information about proteins in their native membrane environment is scarce. This problem is particularly relevant in the case of the highly-charged S1–S4 voltage-sensing domains responsible for nerve impulses, where interactions with the lipid bilayer are critical for the function of voltage-activated potassium channels. Here we use neutron diffraction, solid-state nuclear magnetic resonance spectroscopy, and molecular dynamics simulations to investigate the structure and hydration of bilayer membranes containing S1–S4 voltage-sensing domains. Our results show that voltage sensors adopt transmembrane orientations, cause a modest reshaping of the surrounding lipid bilayer, and that water molecules intimately interact with the protein within the membrane. These structural findings reveal that voltage sensors have evolved to interact with the lipid membrane while keeping the energetic and structural perturbations to a minimum, and that water penetrates into the membrane to hydrate charged residues and shape the transmembrane electric field. PMID:19940918

Design and Analysis of Nano-Pulse Generator for Industrial Wastewater Application

NASA Astrophysics Data System (ADS)

Jang, Sung-Duck; Son, Yoon-Kyoo; Cho, Moo-Hyun; Norov, Enkhbat

2018-05-01

Recently, the application of a pulsed power system is being extended to environmental and industrial fields. The non-dissolution wastewater pollutants from industrial plants can be processed by applying high-voltage pulses with a fast rising time (a few nanoseconds) and short duration (nano to microseconds) in a pulsed corona discharge reactor. The high-voltage nano-pulse generator with a magnetic switch has been developed. It can be used for a spray type water treatment facility. Its corona current in load can be adjusted by pulse width and repetition rate. We investigated the performance of the nano-pulse generator by using the dummy load that is composed of resistor and capacitor equivalent to the actual reactor. In this paper, the results of design, construction and characterization of a high-voltage nano-pulse generator for an industrial wastewater treatment are reported. Consequently, a pulse width of 1.1 μs at the repetition rate of 200 pps, a peak voltage of 41 kV for the nano-pulse generator were achieved across a 640 Ω load. The simulation results on magnetic switch show reasonable agreement with experimental ones.

Effects of Gold Nanoparticles on Pentacene Organic Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Lee, Keanchuan; Weis, Martin; Ou-Yang, Wei; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2011-04-01

The effect of gold nanoparticles (NPs) on pentacene organic field-effect transistors (OFETs) was being investigated by both DC and AC methods, which are current-voltage (I-V) measurements in steady-state and impedance spectroscopy (IS) respectively. Here poly(vinyl alcohol) (PVA) and PVA blended with Au NPs as composite are spin-coated on SiO2 as gate-insulator for top-contact pentacene OFET. The characteristics of the device were being investigated based on the contact resistance, trapped charges, effective mobility and threshold voltage based on transfer characteristics of OFET. Results revealed that OFET with NPs exhibited larger hysteresis and higher contact resistance at high voltage region. IS measurements were performed and the fitting of results by the Maxwell-Wagner equivalent circuit showed that for device with NPs a series of capacitance and resistance which represents trapping must be introduced in order to have agreeable fitting. The fitting had helped to clarify the reason behind the higher contact resistance and bigger hysteresis which was mainly caused by the space charge field formed by the traps when Au NPs were introduced into the device.

Calculating realistic voltages across the US power grid utilizing measured impedances and magnetic fields

NASA Astrophysics Data System (ADS)

Lucas, G.; Love, J. J.; Kelbert, A.; Bedrosian, P.; Rigler, E. J.

2017-12-01

Space weather induces significant geoelectric fields within Earth's subsurface that can adversely affect electric power grids. The complex interaction between space weather and the solid Earth has traditionally been approached with the use of simple 1-D impedance functions relating the inducing magnetic field to the induced geoelectric field. Ongoing data collection through the NSF EarthScope program has produced measured impedance data across much of the continental US. In this work, impedance data are convolved with magnetic field variations, obtained from USGS magnetic observatories, during a geomagnetic storm. This convolution produces geoelectric fields within the earth. These geoelectric fields are then integrated across power transmission lines to determine the voltage generated within each power line as a function of time during a geomagnetic storm. The voltages generated within the electric power grid will be shown for several historic geomagnetic storms. The estimated voltages calculated from 1-D and 3-D impedances differ by more than 100 V across some transmission lines. In combination with grounding resistance data and network topology, these voltage estimates can be utilized by power companies to estimate geomagnetically-induced currents throughout the network. These voltage estimates can provide information on which power lines are most vulnerable to geomagnetic storms, and assist power grid companies investigating where to install additional protections within their grid.

Pulsed Power Bibliography. Volume 1. Indices.

DTIC Science & Technology

1983-08-01

REPETITION RATES «e»7 A 100 KV, FAST, HIGH EHEROY. NONUNIFORM FIELD DISTORTION SWITCH MM CROWBARRIHO TECHNIGUE FOR HIGH-VOLTAGE CAPACITOR SAHKS...EMISSION IN THE ELECTRICAL EXPLOSION OF A THIH METAL FOIL • lair , O.T.A. 427) STATISTICAL TIME LAOS IN GAS DISCHARGE GAPS IRRADIATED WITH A...7 A 111 KV. FAST. HIGH ENERGY, NONUNIFORM FIELD DISTORTION SWITCH MM A 3 MA. ill KV FAST CAPACITOR IANK FOR A SHOCK-HEATED TORUS 7217 A LOW

Giant magneto-impedance and magneto-inductive effects in amorphous alloys

NASA Astrophysics Data System (ADS)

Panina, L. V.; Mohri, K.; Bushida, K.; Noda, M.

1994-11-01

Recent experiments have discovered giant and sensitive magneto-impedance and magneto-inductive effects in FeCoSiB amorphous wires. These effects include a sensitive change in an ac wire voltage with the application of a small dc longitudinal magnetic field. At low frequencies (1-10 kHz) the inductive voltage drops by 50% for a field of 2 Oe (25%/Oe) reflecting a strong field dependence of the circumferential permeability. At higher frequencies (0.1-10 MHz) when the skin effect is essential, the amplitude of the total wire voltage decreases by 40%-60% for fields of 3-10 Oe (about 10%/Oe). These effects exhibit no hysteresis for the variation of an applied field and can be obtained even in wires of 1 mm length and a few micrometer diameter. These characteristics are very useful to constitute a highly sensitive microsensor head to detect local fields of the order of 10(exp -5) Oe. In this paper, we review recently obtained experimental results on magneto-inductive and magneto-impedance effects and present a detailed discussion for their mechanism, developing a general approach in terms of ac complex impedance in a magnetic conductor. In the case of a strong skin effect the total wire impedance depends on the circumferential permeability through the penetration depth, resulting in the giant magneto-impedance effect.

Effects of surface dielectric barrier discharge on aerodynamic characteristic of train

NASA Astrophysics Data System (ADS)

Dong, Lei; Gao, Guoqiang; Peng, Kaisheng; Wei, Wenfu; Li, Chunmao; Wu, Guangning

2017-07-01

High-speed railway today has become an indispensable means of transportation due to its remarkable advantages, including comfortability, convenience and less pollution. The increase in velocity makes the air drag become the main source of energy consumption, leading to receiving more and more concerns. The surface dielectric barrier discharge has shown some unique characteristics in terms of active airflow control. In this paper, the influences of surface dielectric barrier discharge on the aerodynamic characteristics of a scaled train model have been studied. Aspects of the discharge power consumption, the temperature distribution, the velocity of induced flow and the airflow field around the train model were considered. The applied AC voltage was set in the range of 20 kV to 28 kV, with a fixed frequency of 9 kHz. Results indicated that the discharge power consumption, the maximum temperature and the induced flow velocity increased with increasing applied voltage. Mechanisms of applied voltage influencing these key parameters were discussed from the point of the equivalent circuit. The airflow field around the train model with different applied voltages was observed by the smoke visualization experiment. Finally, the effects of surface dielectric barrier discharge on the train drag reduction with different applied voltages were analyzed.

A ceramic radial insulation structure for a relativistic electron beam vacuum diode.

PubMed

Xun, Tao; Yang, Hanwu; Zhang, Jiande; Liu, Zhenxiang; Wang, Yong; Zhao, Yansong

2008-06-01

For one kind of a high current diode composed of a small disk-type alumina ceramic insulator water/vacuum interface, the insulation structure was designed and experimentally investigated. According to the theories of vacuum flashover and the rules for radial insulators, a "cone-column" anode outline and the cathode shielding rings were adopted. The electrostatic field along the insulator surface was obtained by finite element analysis simulating. By adjusting the outline of the anode and reshaping the shielding rings, the electric fields were well distributed and the field around the cathode triple junction was effectively controlled. Area weighted statistical method was applied to estimate the surface breakdown field. In addition, the operating process of an accelerator based on a spiral pulse forming line (PFL) was simulated through the PSPICE software to get the waveform of charging and diode voltage. The high voltage test was carried out on a water dielectric spiral PFL accelerator with long pulse duration, and results show that the diode can work stably in 420 kV, 200 ns conditions. The experimental results agree with the theoretical and simulated results.

Exposure assessment of extremely low frequency electric fields in Tehran, Iran, 2010.

PubMed

Nassiri, Parvin; Esmaeilpour, Mohammad Reza Monazzam; Gharachahi, Ehsan; Haghighat, Gholamali; Yunesian, Masoud; Zaredar, Narges

2013-01-01

Extremely Low-Frequency (ELF) electric and magnetic fields belonging to the nonionizing electromagnetic radiation spectrum have a frequency of 50 - 60 Hz. All people are exposed to a complex set of electric and magnetic fields that spread throughout the environment. The current study was carried out to assess people's exposure to an ELF electric field in the Tehran metropolitan area in 2010. The measurement of the electronic fields was performed using an HI-3604 power frequency field strength measurement device. A total number of 2,753 measurements were performed. Afterward, the data obtained were transferred to the base map using Arc View Version 3.2 and Arc Map Version 9.3. Finally, an interpolation method was applied to expand the intensity of the electric field to the entire city. Based on the results obtained, the electric field was divided into three parts with various intensities including 0-5 V m, 5-15 V m, and >15 V m. It should be noted that the status of high voltage transmission lines, electric substations, and specific points including schools and hospitals were also marked on the map. Minimum and maximum electric field intensities were measured tantamount to 0.31 V m and 19.80 V m, respectively. In all measurements, the electric field was much less than the amount provided in the ICNIRP Guide. The results revealed that 141 hospitals and 6,905 schools are situated in an area with electric field intensity equal to 0-5 V m, while 15 hospitals and 95 schools are located in zones of 5-15 V m and more than 15 V m. Examining high voltage transmission lines and electric substations in Tehran and its suburbs suggested that the impact of the lines on the background electric field of the city was low. Accordingly, 0.97 km of Tehran located on the city border adjacent to the high voltage transmission lines have an electric field in the range of 5 to 15 V m. The noted range is much lower than the available standards. In summary, it can be concluded that the public is not exposed to a risky background electric field in metropolitan Tehran. The result of comparing sensitive recipients showed that the schools have a more desirable status than the hospitals. Nonetheless, epidemiologic studies can lead to more understanding of the impact on public health.

Electric-Field-Induced Degradation of Methylammonium Lead Iodide Perovskite Solar Cells.

PubMed

Bae, Soohyun; Kim, Seongtak; Lee, Sang-Won; Cho, Kyung Jin; Park, Sungeun; Lee, Seunghun; Kang, Yoonmook; Lee, Hae-Seok; Kim, Donghwan

2016-08-18

Perovskite solar cells have great potential for high efficiency generation but are subject to the impact of external environmental conditions such as humidity, UV and sun light, temperature, and electric fields. The long-term stability of perovskite solar cells is an important issue for their commercialization. Various studies on the stability of perovskite solar cells are currently being performed; however, the stability related to electric fields is rarely discussed. Here the electrical stability of perovskite solar cells is studied. Ion migration is confirmed using the temperature-dependent dark current decay. Changes in the power conversion efficiency according to the amount of the external bias are measured in the dark, and a significant drop is observed only at an applied voltage greater than 0.8 V. We demonstrate that perovskite solar cells are stable under an electric field up to the operating voltage.

Leakage and field emission in side-gate graphene field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Di Bartolomeo, A., E-mail: dibant@sa.infn.it; Iemmo, L.; Romeo, F.

We fabricate planar graphene field-effect transistors with self-aligned side-gate at 100 nm from the 500 nm wide graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1 V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO{sub 2}/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO{sub 2} up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at higher voltages. We report a field-emission current densitymore » as high as 1 μA/μm between graphene flakes. These findings are important for the miniaturization of atomically thin devices.« less

High Voltage Power Supply Design Guide for Space

NASA Technical Reports Server (NTRS)

Bever, Renate S.; Ruitberg, Arthur P.; Kellenbenz, Carl W.; Irish, Sandra M.

2006-01-01

This book is written for newcomers to the topic of high voltage (HV) in space and is intended to replace an earlier (1970s) out-of-print document. It discusses the designs, problems, and their solutions for HV, mostly direct current, electric power, or bias supplies that are needed for space scientific instruments and devices, including stepping supplies. Output voltages up to 30kV are considered, but only very low output currents, on the order of microamperes. The book gives a brief review of the basic physics of electrical insulation and breakdown problems, especially in gases. It recites details about embedment and coating of the supplies with polymeric resins. Suggestions on HV circuit parts follow. Corona or partial discharge testing on the HV parts and assemblies is discussed both under AC and DC impressed test voltages. Electric field analysis by computer on an HV device is included in considerable detail. Finally, there are many examples given of HV power supplies, complete with some of the circuit diagrams and color photographs of the layouts.

Graphene quantum dot (GQD)-induced photovoltaic and photoelectric memory elements in a pentacene/GQD field effect transistor as a probe of functional interface

NASA Astrophysics Data System (ADS)

Kim, Youngjun; Cho, Seongeun; Kim, Hyeran; Seo, Soonjoo; Lee, Hyun Uk; Lee, Jouhahn; Ko, Hyungduk; Chang, Mincheol; Park, Byoungnam

2017-09-01

Electric field-induced charge trapping and exciton dissociation were demonstrated at a penatcene/grapheme quantum dot (GQD) interface using a bottom contact bi-layer field effect transistor (FET) as an electrical nano-probe. Large threshold voltage shift in a pentacene/GQD FET in the dark arises from field-induced carrier trapping in the GQD layer or GQD-induced trap states at the pentacene/GQD interface. As the gate electric field increases, hysteresis characterized by the threshold voltage shift depending on the direction of the gate voltage scan becomes stronger due to carrier trapping associated with the presence of a GQD layer. Upon illumination, exciton dissociation and gate electric field-induced charge trapping simultaneously contribute to increase the threshold voltage window, which can potentially be exploited for photoelectric memory and/or photovoltaic devices through interface engineering.

Wireless data transmission from inside electromagnetic fields.

PubMed

Huertas, José Ignacio; Barraza, Roberto; Echeverry, Julian Mauricio

2010-01-01

This paper describes analytical and experimental work developed to evaluate the effects of the electromagnetic fields produced by high-voltage lines (400 kV) on wireless data transmission at the 900MHz band. In this work the source of the data transmission is located inside the electromagnetic field and the reception station is located at different distances from the power lines. Different atmospheric conditions are considered.

Probing transport mechanisms of BaFe₂As₂ superconducting films and grain boundary junctions by noise spectroscopy.

PubMed

Barone, C; Romeo, F; Pagano, S; Adamo, M; Nappi, C; Sarnelli, E; Kurth, F; Iida, K

2014-08-22

An important step forward for the understanding of high-temperature superconductivity has been the discovery of iron-based superconductors. Among these compounds, iron pnictides could be used for high-field magnet applications, resulting more advantageous over conventional superconductors, due to a high upper critical field as well as its low anisotropy at low temperatures. However, the principal obstacle in fabricating high quality superconducting wires and tapes is given by grain boundaries. In order to study these effects, the dc transport and voltage-noise properties of Co-doped BaFe₂As₂ superconducting films with artificial grain boundary junctions have been investigated. A specific procedure allows the separation of the film noise from that of the junction. While the former shows a standard 1/f behaviour, the latter is characterized by an unconventional temperature-dependent multi-Lorentzian voltage-spectral density. Moreover, below the film superconducting critical temperature, a peculiar noise spectrum is found for the grain boundary junction. Possible theoretical interpretation of these phenomena is proposed.

Effects of plasma-induced charging damage on random telegraph noise in metal-oxide-semiconductor field-effect transistors with SiO2 and high-k gate dielectrics

NASA Astrophysics Data System (ADS)

Kamei, Masayuki; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

2014-01-01

We clarified in this study how plasma-induced charging damage (PCD) affects the so-called “random telegraph noise (RTN)” — a principal concern in designing ultimately scaled large-scale integrated circuits (LSIs). Metal-oxide-semiconductor field-effect transistors (MOSFETs) with SiO2 and high-k gate dielectric were exposed to an inductively coupled plasma (ICP) with Ar gas. Drain current vs gate voltage (Ids-Vg) characteristics were obtained before and after the ICP plasma exposure for the same device. Then, the time evolution of Ids fluctuation defined as Ids/μIds was measured, where μIds is the mean Ids. This value corresponds to an RTN feature, and RTN was obtained under various gate voltages (Vg) by a customized measurement technique. We focused on the statistical distribution width of (Ids/μIds), δ(Ids/μIds), in order to clarify the effects of PCD on RTN. δ(Ids/μIds) was increased by PCD for both MOSFETs with the SiO2 and high-k gate dielectrics, suggesting that RTN can be used as a measure of PCD, i.e., a distribution width increase directly indicates the presence of PCD. The dependence of δ(Ids/μIds) on the overdrive voltage Vg-Vth, where Vth is the threshold voltage, was investigated by the present technique. It was confirmed that δ(Ids/μIds) increased with a decrease in the overdrive voltage for MOSFETs with the SiO2 and high-k gate dielectrics. The presence of created carrier trap sites with PCD was characterized by the time constants for carrier capture and emission. The threshold voltage shift (ΔVth) induced by PCD was also evaluated and compared with the RTN change, to correlate the RTN increase with ΔVth induced by PCD. Although the estimated time constants exhibited complex behaviors due to the nature of trap sites created by PCD, δ(Ids/μIds) showed a straightforward tendency in accordance with the amount of PCD. These findings provide an in-depth understanding of plasma-induced RTN characteristic changes in future MOSFETs.

LEO high voltage solar array arcing response model, continuation 5

NASA Technical Reports Server (NTRS)

Metz, Roger N.

1989-01-01

The modeling of the Debye Approximation electron sheaths in the edge and strip geometries was completed. Electrostatic potentials in these sheaths were compared to NASCAP/LEO solutions for similar geometries. Velocity fields, charge densities and particle fluxes to the biased surfaces were calculated for all cases. The major conclusion to be drawn from the comparisons of our Debye Approximation calculations with NASCAP-LEO output is that, where comparable biased structures can be defined and sufficient resolution obtained, these results are in general agreement. Numerical models for the Child-Langmuir, high-voltage electron sheaths in the edge and strip geometries were constructed. Electrostatic potentials were calculated for several cases in each of both geometries. Velocity fields and particle fluxes were calculated. The self-consistent solution process was carried through one cycle and output electrostatic potentials compared to NASCAP-type input potentials.

Recent progress of carbon nanotube field emitters and their application.

PubMed

Seelaboyina, Raghunandan; Choi, Wonbong

2007-01-01

The potential of utilizing carbon nanotube field emission properties is an attractive feature for future vacuum electronic devices including: high power microwave, miniature x-ray, backlight for liquid crystal displays and flat panel displays. Their high emission current, nano scale geometry, chemical inertness and low threshold voltage for emission are attractive features for the field emission applications. In this paper we review the recent developments of carbon nanotube field emitters and their device applications. We also discuss the latest results on field emission current amplification achieved with an electron multiplier microchannel plate, and emission performance of multistage field emitter based on oxide nanowire operated in poor vacuum.

HIGH VOLTAGE ION SOURCE

DOEpatents

Luce, J.S.

1960-04-19

A device is described for providing a source of molecular ions having a large output current and with an accelerated energy of the order of 600 kv. Ions are produced in an ion source which is provided with a water-cooled source grid of metal to effect maximum recombination of atomic ions to molecular ions. A very high accelerating voltage is applied to withdraw and accelerate the molecular ions from the source, and means are provided for dumping the excess electrons at the lowest possible potentials. An accelerating grid is placed adjacent to the source grid and a slotted, grounded accelerating electrode is placed adjacent to the accelerating grid. A potential of about 35 kv is maintained between the source grid and accelerating grid, and a potential of about 600 kv is maintained between the accelerating grid and accelerating electrode. In order to keep at a minimum the large number of oscillating electrons which are created when such high voltages are employed in the vicinity of a strong magnetic field, a plurality of high voltage cascaded shields are employed with a conventional electron dumping system being employed between each shield so as to dump the electrons at the lowest possible potential rather than at 600 kv.

Microfluidic on-chip fluorescence-activated interface control system

PubMed Central

Haiwang, Li; Nguyen, N. T.; Wong, T. N.; Ng, S. L.

2010-01-01

A microfluidic dynamic fluorescence-activated interface control system was developed for lab-on-a-chip applications. The system consists of a straight rectangular microchannel, a fluorescence excitation source, a detection sensor, a signal conversion circuit, and a high-voltage feedback system. Aqueous NaCl as conducting fluid and aqueous glycerol as nonconducting fluid were introduced to flow side by side into the straight rectangular microchannel. Fluorescent dye was added to the aqueous NaCl to work as a signal representing the interface position. Automatic control of the liquid interface was achieved by controlling the electroosmotic effect that exists only in the conducting fluid using a high-voltage feedback system. A LABVIEW program was developed to control the output of high-voltage power supply according the actual interface position, and then the interface position is modified as the output of high-voltage power supply. At last, the interface can be moved to the desired position automatically using this feedback system. The results show that the system presented in this paper can control an arbitrary interface location in real time. The effects of viscosity ratio, flow rates, and polarity of electric field were discussed. This technique can be extended to switch the sample flow and droplets automatically. PMID:21173886

Interactions between surface discharges induced by volume discharges in a dielectric barrier discharge system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Yenan; Dong, Lifang, E-mail: donglfhbu@163.com; Zhao, Longhu

2014-10-15

The interaction between micro-discharges involved in surface discharges (SDs) is studied in dielectric barrier discharge system. Instantaneous images taken by high speed cameras show that the SDs are induced by volume discharges (VDs). They cannot cross the midperpendicular of two neighbouring volume charges at low voltage while they stretch along it at high voltage, indicating that there is interaction between SDs. The differences of plasma parameters between SD and VD are studied by optical emission spectroscopy. The simulation of the electric fields of the wall charges accumulated by VD further confirms the existence of the interaction.

A low-cost, scalable, current-sensing digital headstage for high channel count μECoG.

PubMed

Trumpis, Michael; Insanally, Michele; Zou, Jialin; Elsharif, Ashraf; Ghomashchi, Ali; Sertac Artan, N; Froemke, Robert C; Viventi, Jonathan

2017-04-01

High channel count electrode arrays allow for the monitoring of large-scale neural activity at high spatial resolution. Implantable arrays featuring many recording sites require compact, high bandwidth front-end electronics. In the present study, we investigated the use of a small, light weight, and low cost digital current-sensing integrated circuit for acquiring cortical surface signals from a 61-channel micro-electrocorticographic (μECoG) array. We recorded both acute and chronic μECoG signal from rat auditory cortex using our novel digital current-sensing headstage. For direct comparison, separate recordings were made in the same anesthetized preparations using an analog voltage headstage. A model of electrode impedance explained the transformation between current- and voltage-sensed signals, and was used to reconstruct cortical potential. We evaluated the digital headstage using several metrics of the baseline and response signals. The digital current headstage recorded neural signal with similar spatiotemporal statistics and auditory frequency tuning compared to the voltage signal. The signal-to-noise ratio of auditory evoked responses (AERs) was significantly stronger in the current signal. Stimulus decoding based on true and reconstructed voltage signals were not significantly different. Recordings from an implanted system showed AERs that were detectable and decodable for 52 d. The reconstruction filter mitigated the thermal current noise of the electrode impedance and enhanced overall SNR. We developed and validated a novel approach to headstage acquisition that used current-input circuits to independently digitize 61 channels of μECoG measurements of the cortical field. These low-cost circuits, intended to measure photo-currents in digital imaging, not only provided a signal representing the local cortical field with virtually the same sensitivity and specificity as a traditional voltage headstage but also resulted in a small, light headstage that can easily be scaled to record from hundreds of channels.

A low-cost, scalable, current-sensing digital headstage for high channel count μECoG

NASA Astrophysics Data System (ADS)

Trumpis, Michael; Insanally, Michele; Zou, Jialin; Elsharif, Ashraf; Ghomashchi, Ali; Sertac Artan, N.; Froemke, Robert C.; Viventi, Jonathan

2017-04-01

Objective. High channel count electrode arrays allow for the monitoring of large-scale neural activity at high spatial resolution. Implantable arrays featuring many recording sites require compact, high bandwidth front-end electronics. In the present study, we investigated the use of a small, light weight, and low cost digital current-sensing integrated circuit for acquiring cortical surface signals from a 61-channel micro-electrocorticographic (μECoG) array. Approach. We recorded both acute and chronic μECoG signal from rat auditory cortex using our novel digital current-sensing headstage. For direct comparison, separate recordings were made in the same anesthetized preparations using an analog voltage headstage. A model of electrode impedance explained the transformation between current- and voltage-sensed signals, and was used to reconstruct cortical potential. We evaluated the digital headstage using several metrics of the baseline and response signals. Main results. The digital current headstage recorded neural signal with similar spatiotemporal statistics and auditory frequency tuning compared to the voltage signal. The signal-to-noise ratio of auditory evoked responses (AERs) was significantly stronger in the current signal. Stimulus decoding based on true and reconstructed voltage signals were not significantly different. Recordings from an implanted system showed AERs that were detectable and decodable for 52 d. The reconstruction filter mitigated the thermal current noise of the electrode impedance and enhanced overall SNR. Significance. We developed and validated a novel approach to headstage acquisition that used current-input circuits to independently digitize 61 channels of μECoG measurements of the cortical field. These low-cost circuits, intended to measure photo-currents in digital imaging, not only provided a signal representing the local cortical field with virtually the same sensitivity and specificity as a traditional voltage headstage but also resulted in a small, light headstage that can easily be scaled to record from hundreds of channels.

A low-cost, scalable, current-sensing digital headstage for high channel count μECoG

PubMed Central

Trumpis, Michael; Insanally, Michele; Zou, Jialin; Elsharif, Ashraf; Ghomashchi, Ali; Artan, N. Sertac; Froemke, Robert C.; Viventi, Jonathan

2017-01-01

Objective High channel count electrode arrays allow for the monitoring of large-scale neural activity at high spatial resolution. Implantable arrays featuring many recording sites require compact, high bandwidth front-end electronics. In the present study, we investigated the use of a small, light weight, and low cost digital current-sensing integrated circuit for acquiring cortical surface signals from a 61-channel micro-electrocorticographic (μECoG) array. Approach We recorded both acute and chronic μECoG signal from rat auditory cortex using our novel digital current-sensing headstage. For direct comparison, separate recordings were made in the same anesthetized preparations using an analog voltage headstage. A model of electrode impedance explained the transformation between current- and voltage-sensed signals, and was used to reconstruct cortical potential. We evaluated the digital headstage using several metrics of the baseline and response signals. Main results The digital current headstage recorded neural signal with similar spatiotemporal statistics and auditory frequency tuning compared to the voltage signal. The signal-to-noise ratio of auditory evoked responses (AERs) was significantly stronger in the current signal. Stimulus decoding based on true and reconstructed voltage signals were not significantly different. Recordings from an implanted system showed AERs that were detectable and decodable for 52 days. The reconstruction filter mitigated the thermal current noise of the electrode impedance and enhanced overall SNR. Significance We developed and validated a novel approach to headstage acquisition that used current-input circuits to independently digitize 61 channels of μECoG measurements of the cortical field. These low-cost circuits, intended to measure photo-currents in digital imaging, not only provided a signal representing the local cortical field with virtually the same sensitivity and specificity as a traditional voltage headstage but also resulted in a small, light headstage that can easily be scaled to record from hundreds of channels. PMID:28102827

Cellular defibrillation: interaction of micro-scale electric fields with voltage-gated ion channels.

PubMed

Kargol, Armin; Malkinski, Leszek; Eskandari, Rahmatollah; Carter, Maya; Livingston, Daniel

2015-09-01

We study the effect of micro-scale electric fields on voltage-gated ion channels in mammalian cell membranes. Such micro- and nano-scale electric fields mimic the effects of multiferroic nanoparticles that were recently proposed [1] as a novel way of controlling the function of voltage-sensing biomolecules such as ion channels. This article describes experimental procedures and initial results that reveal the effect of the electric field, in close proximity of cells, on the ion transport through voltage-gated ion channels. We present two configurations of the whole-cell patch-clamping apparatus that were used to detect the effect of external stimulation on ionic currents and discuss preliminary results that indicate modulation of the ionic currents consistent with the applied stimulus.

SU-C-201-03: Ionization Chamber Collection Efficiency in Pulsed Radiation Fields of High Pulse Dose

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gotz, M; Karsch, L; Pawelke, J

Purpose: To investigate the reduction of collection efficiency of ionization chambers (IC) by volume recombination and its correction in pulsed fields of very high pulse dose. Methods: Measurements of the collection efficiency of a plane-parallel advanced Markus IC (PTW 34045, 1mm electrode spacing, 300V nominal voltage) were obtained for collection voltages of 100V and 300V by irradiation with a pulsed electron beam (20MeV) of varied pulse dose up to approximately 600mGy (0.8nC liberated charge). A reference measurement was performed with a Faraday cup behind the chamber. It was calibrated for the liberated charge in the IC by a linear fitmore » of IC measurement to reference measurement at low pulse doses. The results were compared to the commonly used two voltage approximation (TVA) and to established theories for volume recombination, with and without considering a fraction of free electrons. In addition, an equation system describing the charge transport and reactions in the chamber was solved numerically. Results: At 100V collection voltage and moderate pulse doses the established theories accurately predict the observed collection efficiency, but at extreme pulse doses a fraction of free electrons needs to be considered. At 300V the observed collection efficiency deviates distinctly from that predicted by any of the established theories, even at low pulse doses. However, the numeric solution of the equation system is able to reproduce the measured collection efficiency across the entire dose range of both voltages with a single set of parameters. Conclusion: At high electric fields (3000V/cm here) the existing theoretical descriptions of collection efficiency, including the TVA, are inadequate to predict pulse dose dependency. Even at low pulse doses they might underestimate collection efficiency. The presented, more accurate numeric solution, which considers additional effects like electric shielding by the charges, might provide a valuable tool for future investigations. This project was funded by the German ministry of research and education (BMBF) under grant number: 03Z1N511 and by the state of Saxony under grant number: B 209.« less

Electro-optic voltage sensor with beam splitting

DOEpatents

Woods, Gregory K.; Renak, Todd W.; Davidson, James R.; Crawford, Thomas M.

2002-01-01

The invention is a miniature electro-optic voltage sensor system capable of accurate operation at high voltages without use of the dedicated voltage dividing hardware typically found in the prior art. The invention achieves voltage measurement without significant error contributions from neighboring conductors or environmental perturbations. The invention employs a transmitter, a sensor, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor. Within the sensor the beam undergoes the Pockels electro-optic effect. The electro-optic effect produces a modulation of the beam's polarization, which is in turn converted to a pair of independent conversely-amplitude-modulated signals, from which the voltage of the E-field is determined by the signal processor. The use of converse AM signals enables the signal processor to better distinguish signal from noise. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors

PubMed Central

McVay, Elaine; Palacios, Tomás

2018-01-01

This work develops the first frequency-dependent small-signal model for graphene electrolyte-gated field-effect transistors (EGFETs). Graphene EGFETs are microfabricated to measure intrinsic voltage gain, frequency response, and to develop a frequency-dependent small-signal model. The transfer function of the graphene EGFET small-signal model is found to contain a unique pole due to a resistive element, which stems from electrolyte gating. Intrinsic voltage gain, cutoff frequency, and transition frequency for the microfabricated graphene EGFETs are approximately 3.1 V/V, 1.9 kHz, and 6.9 kHz, respectively. This work marks a critical step in the development of high-speed chemical and biological sensors using graphene EGFETs. PMID:29414868

New controller for high voltage converter modulator at spallation neutron source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wezensky, Mark W; Brown, David L; Lee, Sung-Woo

2017-01-01

The Spallation Neutron Source (SNS) has developed a new control system for the High Voltage Convertor Modulator (HVCM) at the SNS to replace the original control system which is approaching obsolescence. The original system was based on controllers for similar high voltage systems that were already in use [1]. The new controller, based on National Instruments PXI/FlexRIO Field Programmable Gate Array (FPGA) platform, offers enhancements such as modular construction, flexibility and non-proprietary software. The new controller also provides new capabilities like various methods for modulator pulse flattening, waveform capture, and first fault detection. This paper will discuss the design ofmore » the system, including the human machine interface, based on lessons learned at the SNS and other projects. It will also discuss performance and other issues related to its operation in an accelerator facility which requires high availability. To date, 73% of the operational HVCMs have been upgraded to with the new controller, and the remainder are scheduled for completion by mid-2017.« less

Space charge effects on the current-voltage characteristics of gated field emitter arrays

NASA Astrophysics Data System (ADS)

Jensen, K. L.; Kodis, M. A.; Murphy, R. A.; Zaidman, E. G.

1997-07-01

Microfabricated field emitter arrays (FEAs) can provide the very high electron current densities required for rf amplifier applications, typically on the order of 100 A/cm2. Determining the dependence of emission current on gate voltage is important for the prediction of emitter performance for device applications. Field emitters use high applied fields to extract current, and therefore, unlike thermionic emitters, the current densities can exceed 103A/cm2 when averaged over an array. At such high current densities, space charge effects (i.e., the influence of charge between cathode and collector on emission) affect the emission process or initiate conditions which can lead to failure mechanisms for field emitters. A simple model of a field emitter will be used to calculate the one-dimensional space charge effects on the emission characteristics by examining two components: charge between the gate and anode, which leads to Child's law, and charge within the FEA unit cell, which gives rise to a field suppression effect which can exist for a single field emitter. The predictions of the analytical model are compared with recent experimental measurements designed to assess space charge effects and predict the onset of gate current. It is shown that negative convexity on a Fowler-Nordheim plot of Ianode(Vgate) data can be explained in terms of field depression at the emitter tip in addition to reflection of electrons by a virtual cathode created when the anode field is insufficient to extract all of the current; in particular, the effects present within the unit cell constitute a newly described effect.

Nanosecond liquid crystalline optical modulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borshch, Volodymyr; Shiyanovskii, Sergij V.; Lavrentovich, Oleg D.

2016-07-26

An optical modulator includes a liquid crystal cell containing liquid crystal material having liquid crystal molecules oriented along a quiescent director direction in the unbiased state, and a voltage source configured to apply an electric field to the liquid crystal material wherein the direction of the applied electric field does not cause the quiescent director direction to change. An optical source is arranged to transmit light through or reflect light off the liquid crystal cell with the light passing through the liquid crystal material at an angle effective to undergo phase retardation in response to the voltage source applying themore » electric field. The liquid crystal material may have negative dielectric anisotropy, and the voltage source configured to apply an electric field to the liquid crystal material whose electric field vector is transverse to the quiescent director direction. Alternatively, the liquid crystal material may have positive dielectric anisotropy and the voltage source configured to apply an electric field to the liquid crystal material whose electric field vector is parallel with the quiescent director direction.« less

Effect of an alternating current electric field on Co(OH)2 periodic precipitation

NASA Astrophysics Data System (ADS)

Karam, Tony; Sultan, Rabih

2013-02-01

The present paper studies the effect of an alternating current (AC) electric field on Co(OH)2 Liesegang patterns. In the presence of an AC electric field, the band spacing increases with spacing number, but reaches a plateau at large spacing (or band) numbers. The band spacing increases with applied AC voltage, but to a much lesser extent than the effect of a DC electric field under the same applied voltage [see R. Sultan, R. Halabieh, Chem. Phys. Lett. 332 (2000) 331][1]. At low enough applied voltage, the band spacing increases with frequency. At higher voltages, the band spacing becomes independent of the field frequency. The effect of concentration of the inner electrolyte (Co2+), exactly opposes that observed under DC electric field; i.e., the band spacing decreases with increasing concentration. The dynamics were shown to be governed by a competitive scenario between the diffusion gradient and the alternating current electric field factor.

Optical Diagnostic Characterization of High-Power Hall Thruster Wear and Operation

NASA Technical Reports Server (NTRS)

Williams, George J., Jr.; Soulas, George C.; Kamhawi, Hani

2012-01-01

Optical emission spectroscopy is employed to correlate BN insulator erosion with high-power Hall thruster operation. Specifically, actinometry leveraging excited xenon states is used to normalize the emission spectra of ground state boron as a function of thruster operating condition. Trends in the strength of the boron signal are correlated with thruster power, discharge voltage, and discharge current. In addition, the technique is demonstrated on metallic coupons embedded in the walls of the HiVHAc EM thruster. The OES technique captured the overall trend in the erosion of the coupons which boosts credibility in the method since there are no data to which to calibrate the erosion rates of high-power Hall thrusters. The boron signals are shown to trend linearly with discharge voltage for a fixed discharge current as expected. However, the boron signals of the higher-power NASA 300M and NASA 457Mv2 trend with discharge current and show an unexpectedly weak to inverse dependence on discharge voltage. Electron temperatures measured optically in the near-field plume of the thruster agree well with Langmuir probe data. However, the optical technique used to determine Te showed unacceptable sensitivity to the emission intensities. Near-field, single-frequency imaging of the xenon neutrals is also presented as a function of operating condition for the NASA 457 Mv2.

An optical fiber Bragg grating and piezoelectric ceramic voltage sensor

NASA Astrophysics Data System (ADS)

Yang, Qing; He, Yanxiao; Sun, Shangpeng; Luo, Mandan; Han, Rui

2017-10-01

Voltage measurement is essential in many fields like power grids, telecommunications, metallurgy, railways, and oil production. A voltage-sensing unit, consisting of fiber Bragg gratings (FBGs) and piezoelectric ceramics, based on which an optical over-voltage sensor was proposed and fabricated in this paper. No demodulation devices like spectrometer or Fabry-Perot filter were needed to gain the voltage signal, and a relatively large sensing frequency range was acquired in this paper; thus, the cost of the sensing system is more acceptable in engineering application. The voltage to be measured was directly applied to the piezoelectric ceramic, and deformation of the ceramics and the grating would be caused because of the inverse piezoelectric effect. With a reference grating, the output light intensity change will be caused by the FBG center wavelength change; thus, the relationship between the applied voltage and the output light intensity was established. Validation of the sensor was accomplished in the frequency range from 50 Hz to 20 kHz and switching impulse waves with a test platform; good linearity of the input-output characteristic was achieved. A temperature validation test was completed, showing that the sensor maintains good temperature stability. Experimental results show that the optical over-voltage sensor can be used for voltage monitoring, and if applied with a voltage divider, the sensor can be used to measure high voltage.

An optical fiber Bragg grating and piezoelectric ceramic voltage sensor.

PubMed

Yang, Qing; He, Yanxiao; Sun, Shangpeng; Luo, Mandan; Han, Rui

2017-10-01

Voltage measurement is essential in many fields like power grids, telecommunications, metallurgy, railways, and oil production. A voltage-sensing unit, consisting of fiber Bragg gratings (FBGs) and piezoelectric ceramics, based on which an optical over-voltage sensor was proposed and fabricated in this paper. No demodulation devices like spectrometer or Fabry-Perot filter were needed to gain the voltage signal, and a relatively large sensing frequency range was acquired in this paper; thus, the cost of the sensing system is more acceptable in engineering application. The voltage to be measured was directly applied to the piezoelectric ceramic, and deformation of the ceramics and the grating would be caused because of the inverse piezoelectric effect. With a reference grating, the output light intensity change will be caused by the FBG center wavelength change; thus, the relationship between the applied voltage and the output light intensity was established. Validation of the sensor was accomplished in the frequency range from 50 Hz to 20 kHz and switching impulse waves with a test platform; good linearity of the input-output characteristic was achieved. A temperature validation test was completed, showing that the sensor maintains good temperature stability. Experimental results show that the optical over-voltage sensor can be used for voltage monitoring, and if applied with a voltage divider, the sensor can be used to measure high voltage.

Chromosomal aberrations in lymphocytes of employees in transformer and generator production exposed to electromagnetic fields and mineral oil.

PubMed

Skyberg, K; Hansteen, I L; Vistnes, A I

2001-04-01

The objective was to study the risk of cytogenetic damage among high voltage laboratory workers exposed to electromagnetic fields and mineral oil. This is a cross sectional study of 24 exposed and 24 matched controls in a Norwegian transformer factory. The exposure group included employees in the high voltage laboratory and in the generator soldering department. Electric and magnetic fields and oil mist and vapor were measured. Blood samples were analyzed for chromosomal aberrations in cultured lymphocytes. In addition to conventional cultures, the lymphocytes were also treated with hydroxyurea and caffeine. This procedure inhibits DNA synthesis and repair in vitro, revealing in vivo genotoxic lesions that are repaired during conventional culturing. In conventional cultures, the exposure group and the controls showed similar values for all cytogenetic parameters. In the DNA synthesis- and repair-inhibited cultures, generator welders showed no differences compared to controls. Among high voltage laboratory testers, compared to the controls, the median number of chromatid breaks was doubled (5 vs. 2.5 per 50 cells; P<0.05) the median number of chromosome breaks was 2 vs. 0.5 (P>0.05) and the median number of aberrant cells was 5 vs. 3.5 (P<0.05). Further analysis of the inhibited culture data from this and a previous study indicated that years of exposure and smoking increase the risk of aberrations. We conclude that there was no increase in cytogenetic damage among exposed workers compared to controls in the conventional lymphocyte assay. In inhibited cultures, however, there were indications that electromagnetic fields in combination with mineral oil exposure may produce chromosomal aberrations. Copyright 2001 Wiley-Liss, Inc.

Highly tunable local gate controlled complementary graphene device performing as inverter and voltage controlled resistor.

PubMed

Kim, Wonjae; Riikonen, Juha; Li, Changfeng; Chen, Ya; Lipsanen, Harri

2013-10-04

Using single-layer CVD graphene, a complementary field effect transistor (FET) device is fabricated on the top of separated back-gates. The local back-gate control of the transistors, which operate with low bias at room temperature, enables highly tunable device characteristics due to separate control over electrostatic doping of the channels. Local back-gating allows control of the doping level independently of the supply voltage, which enables device operation with very low VDD. Controllable characteristics also allow the compensation of variation in the unintentional doping typically observed in CVD graphene. Moreover, both p-n and n-p configurations of FETs can be achieved by electrostatic doping using the local back-gate. Therefore, the device operation can also be switched from inverter to voltage controlled resistor, opening new possibilities in using graphene in logic circuitry.

Superconducting FCL using a combined inducted magnetic field trigger and shunt coil

DOEpatents

Tekletsadik, Kasegn D.

2007-10-16

A single trigger/shunt coil is utilized for combined induced magnetic field triggering and shunt impedance. The single coil connected in parallel with the high temperature superconducting element, is designed to generate a circulating current in the parallel circuit during normal operation to aid triggering the high temperature superconducting element to quench in the event of a fault. The circulating current is generated by an induced voltage in the coil, when the system current flows through the high temperature superconducting element.

29 CFR 1926.66 - Criteria for design and construction of spray booths.

Code of Federal Regulations, 2012 CFR

2012-07-01

... the conveyor carrying goods through the high voltage field. (iii) Occurrence of a ground or of an... portable electrical infrared drying apparatus when conforming with the following: (i) Interior (especially...

29 CFR 1926.66 - Criteria for design and construction of spray booths.

Code of Federal Regulations, 2013 CFR

2013-07-01

... the conveyor carrying goods through the high voltage field. (iii) Occurrence of a ground or of an... portable electrical infrared drying apparatus when conforming with the following: (i) Interior (especially...

29 CFR 1926.66 - Criteria for design and construction of spray booths.

Code of Federal Regulations, 2014 CFR

2014-07-01

... the conveyor carrying goods through the high voltage field. (iii) Occurrence of a ground or of an... portable electrical infrared drying apparatus when conforming with the following: (i) Interior (especially...

Extra high speed modified Lundell alternator parameters and open/short-circuit characteristics from global 3D-FE magnetic field solutions

NASA Astrophysics Data System (ADS)

Wang, R.; Demerdash, N. A.

1992-06-01

The combined magnetic vector potential - magnetic scalar potential method of computation of 3D magnetic fields by finite elements, introduced in a companion paper, is used for global 3D field analysis and machine performance computations under open-circuit and short-circuit conditions for an example 14.3 kVA modified Lundell alternator, whose magnetic field is of intrinsic 3D nature. The computed voltages and currents under these machine test conditions were verified and found to be in very good agreement with corresponding test data. Results of use of this modelling and computation method in the study of a design alteration example, in which the stator stack length of the example alternator is stretched in order to increase voltage and volt-ampere rating, are given here. These results demonstrate the inadequacy of conventional 2D-based design concepts and the imperative of use of this type of 3D magnetic field modelling in the design and investigation of such machines.

Extra high speed modified Lundell alternator parameters and open/short-circuit characteristics from global 3D-FE magnetic field solutions

NASA Technical Reports Server (NTRS)

Wang, R.; Demerdash, N. A.

1992-01-01

The combined magnetic vector potential - magnetic scalar potential method of computation of 3D magnetic fields by finite elements, introduced in a companion paper, is used for global 3D field analysis and machine performance computations under open-circuit and short-circuit conditions for an example 14.3 kVA modified Lundell alternator, whose magnetic field is of intrinsic 3D nature. The computed voltages and currents under these machine test conditions were verified and found to be in very good agreement with corresponding test data. Results of use of this modelling and computation method in the study of a design alteration example, in which the stator stack length of the example alternator is stretched in order to increase voltage and volt-ampere rating, are given here. These results demonstrate the inadequacy of conventional 2D-based design concepts and the imperative of use of this type of 3D magnetic field modelling in the design and investigation of such machines.

Space charge inhibition effect of nano-Fe{sub 3}O{sub 4} on improvement of impulse breakdown voltage of transformer oil based on improved Kerr optic measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Qing, E-mail: yangqing@cqu.edu.cn; Yu, Fei; Sima, Wenxia

Transformer oil-based nanofluids (NFs) with 0.03 g/L Fe{sub 3}O{sub 4} nanoparticle content exhibit 11.2% higher positive impulse breakdown voltage levels than pure transformer oils. To study the effects of the Fe{sub 3}O{sub 4} nanoparticles on the space charge in transformer oil and to explain why the nano-modified transformer oil exhibits improved impulse breakdown voltage characteristics, the traditional Kerr electro-optic field mapping technique is improved by increasing the length of the parallel-plate electrodes and by using a photodetector array as a high light sensitivity device. The space charge distributions of pure transformer oil and of NFs containing Fe{sub 3}O{sub 4} nanoparticlesmore » can be measured using the improved Kerr electro-optic field mapping technique. Test results indicate a significant reduction in space charge density in the transformer oil-based NFs with the Fe{sub 3}O{sub 4} nanoparticles. The fast electrons are captured by the nanoparticles and are converted into slow-charged particles in the NFs, which then reduce the space charge density and result in a more uniform electric field distribution. Streamer propagation in the NFs is also obstructed, and the breakdown strengths of the NFs under impulse voltage conditions are also improved.« less

Exposure to Electrical Contact Currents and the Risk of Childhood Leukemia

PubMed Central

Does, Monique; Scélo, Ghislaine; Metayer, Catherine; Selvin, Steve; Kavet, Robert; Buffler, Patricia

2011-01-01

The objectives of this study were to examine the association between contact current exposure and the risk of childhood leukemia and to investigate the relationship between residential contact currents and magnetic fields. Indoor and outdoor contact voltage and magnetic-field measurements were collected for the diagnosis residence of 245 cases and 269 controls recruited in the Northern California Childhood Leukemia Study (2000–2007). Logistic regression techniques produced odds ratios (OR) adjusted for age, sex, Hispanic ethnicity, mother’s race and household income. No statistically significant associations were seen between childhood leukemia and indoor contact voltage level [exposure ≥90th percentile (10.5 mV): OR = 0.83, 95% confidence interval (CI): 0.45, 1.54], outdoor contact voltage level [exposure ≥90th percentile (291.2 mV): OR = 0.89, 95% CI: 0.48, 1.63], or indoor magnetic-field levels (>0.20 μT: OR = 0.76, 95% CI: 0.30, 1.93). Contact voltage was weakly correlated with magnetic field; correlation coefficients were r = 0.10 (P = 0.02) for indoor contact voltage and r = 0.15 (P = 0.001) for outdoor contact voltage. In conclusion, in this California population, there was no evidence of an association between childhood leukemia and exposure to contact currents or magnetic fields and a weak correlation between measures of contact current and magnetic fields. PMID:21388283

Effects of high voltage transmission lines on honeybees: a feasibility study. Final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Greenberg, B.

1977-07-01

Methodology is described for the investigation of the effects of electric fields generated by high-tension power lines on honeybees (Apis mellifera L.). The parameters to be measured include colony population, honey stores, amount of acoustical noise generated by the bees, in-hive temperature, incidence of queen cell production, and tendency to swarm. Accompanying dosimetric support includes in-hive electric field measurements, development of shielding to eliminate the electric field from selected colonies, analysis of the acoustical data, and periodic checks on the ambient electric field present under the line and at the control site.

Brillouin distributed temperature sensing system for monitoring of submarine export cables of off-shore wind farms

NASA Astrophysics Data System (ADS)

Marx, Benjamin; Rath, Alexander; Kolm, Frederick; Schröder, Andreas; Buntebarth, Christian; Dreß, Albrecht; Hill, Wieland

2016-05-01

For high-voltage cables, the maximum temperature of the insulation must never be exceeded at any location and at any load condition. The local temperatures depend not only on the cable design and load history, but also on the local thermal environment of the cable. Therefore, distributed temperature monitoring of high-voltage cables is essential to ensure the integrity of the cable at high load. Especially, the load of the export cables of wind farms varies strongly in dependence on weather conditions. In this field study, we demonstrate the measurement performance of a new, robust Brillouin distributed temperature sensing system (Brillouin-DTS). The system is based on spontaneous Brillouin scattering and does not require a fibre loop. This is essential for long submarine high-voltage cables, where normally no loop can be formed in the seabed. It is completely passively cooled and does not contain any moving or wearing parts. The instrument is dedicated for use in industrial and other rough environments. With a measuring time below 10 min, the temperature resolution is better than 1 °C for distances up to 50 km. In the field study, the submarine export cable of an off-shore wind farm has been monitored. The temperature profile of the export cable shows several hot spots, mostly located at cable joints, and also several cold spots.

The contribution of radio-frequency rectification to field-aligned losses of high-harmonic fast wave power to the divertor in the National Spherical Torus eXperiment

DOE PAGES

Perkins, R. J.; Hosea, J. C.; Jaworski, M. A.; ...

2015-04-13

The National Spherical Torus eXperiment (NSTX) can exhibit a major loss of high-harmonic fast wave (HHFW) power along scrape-off layer (SOL) field lines passing in front of the antenna, resulting in bright and hot spirals on both the upper and lower divertor regions. One possible mechanism for this loss is RF sheaths forming at the divertors. We demonstrate that swept-voltage Langmuir probe characteristics for probes under the spiral are shifted relative to those not under the spiral in a manner consistent with RF rectification. We estimate both the magnitude of the RF voltage across the sheath and the sheath heatmore » flux transmission coefficient in the presence of the RF field. Though the precise comparison between computed heat flux and infrared (IR) thermography cannot yet be made, the computed heat deposition compares favorably with the projections from IR camera measurements. The RF sheath losses are significant and contribute substantially to the total SOL losses of HHFW power to the divertor for the cases studied. Our work will guide future experimentation on NSTX-U, where a wide-angle IR camera and a dedicated set of coaxial Langmuir probes for measuring the RF sheath voltage directly will quantify the contribution of RF sheath rectification to the heat deposition from the SOL to the divertor.« less

About the contrast of δ' precipitates in bulk Al-Cu-Li alloys in reflection mode with a field-emission scanning electron microscope at low accelerating voltage.

PubMed

Brodusch, Nicolas; Voisard, Frédéric; Gauvin, Raynald

2017-11-01

Characterising the impact of lithium additions in the precipitation sequence in Al-Li-Cu alloys is important to control the strengthening of the final material. Since now, transmission electron microscopy (TEM) at high beam voltage has been the technique of choice to monitor the size and spatial distribution of δ' precipitates (Al 3 Li). Here we report on the imaging of the δ' phase in such alloys using backscattered electrons (BSE) and low accelerating voltage in a high-resolution field-emission scanning electron microscope. By applying low-energy Ar + ion milling to the surface after mechanical polishing (MP), the MP-induced corroded layers were efficiently removed and permitted the δ's to be visible with a limited impact on the observed microstructure. The resulting BSE contrast between the δ's and the Al matrix was compared with that obtained using Monte Carlo modelling. The artefacts possibly resulting from the sample preparation procedure were reviewed and discussed and permitted to confirm that these precipitates were effectively the metastable δ's. The method described in this report necessitates less intensive sample preparation than that required for TEM and provides a much larger field of view and an easily interpretable contrast compared to the transmission techniques. © 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

Design and Simulation Test of an Open D-Dot Voltage Sensor

PubMed Central

Bai, Yunjie; Wang, Jingang; Wei, Gang; Yang, Yongming

2015-01-01

Nowadays, sensor development focuses on miniaturization and non-contact measurement. According to the D-dot principle, a D-dot voltage sensor with a new structure was designed based on the differential D-dot sensor with a symmetrical structure, called an asymmetric open D-dot voltage sensor. It is easier to install. The electric field distribution of the sensor was analyzed through Ansoft Maxwell and an open D-dot voltage sensor was designed. This open D-voltage sensor is characteristic of accessible insulating strength and small electric field distortion. The steady and transient performance test under 10 kV-voltage reported satisfying performances of the designed open D-dot voltage sensor. It conforms to requirements for a smart grid measuring sensor in intelligence, miniaturization and facilitation. PMID:26393590

Cell Fragmentation and Permeabilization by a 1 ns Pulse Driven Triple-Point Electrode

PubMed Central

Li, Joy; Cho, Michael

2018-01-01

Ultrashort electric pulses (ns-ps) are useful in gaining understanding as to how pulsed electric fields act upon biological cells, but the electric field intensity to induce biological responses is typically higher than longer pulses and therefore a high voltage ultrashort pulse generator is required. To deliver 1 ns pulses with sufficient electric field but at a relatively low voltage, we used a glass-encapsulated tungsten wire triple-point electrode (TPE) at the interface among glass, tungsten wire, and water when it is immersed in water. A high electric field (2 MV/cm) can be created when pulses are applied. However, such a high electric field was found to cause bubble emission and temperature rise in the water near the electrode. They can be attributed to Joule heating near the electrode. Adherent cells on a cover slip treated by the combination of these stimuli showed two major effects: (1) cells in a crater (<100 μm from electrode) were fragmented and the debris was blown away. The principal mechanism for the damage is presumed to be shear forces due to bubble collapse; and (2) cells in the periphery of the crater were permeabilized, which was due to the combination of bubble movement and microstreaming as well as pulsed electric fields. These results show that ultrashort electric fields assisted by microbubbles can cause significant cell response and therefore a triple-point electrode is a useful ablation tool for applications that require submillimeter precision. PMID:29744357

Laser Accelerator

DTIC Science & Technology

2014-09-01

hollow metal sphere. Voltages of over 10 MV can be reached if used with an insulating gas. Corona discharge limits all electrostatic accelerators to...laser field. Lasers can have strong electric fields with frequencies high enough to avoid corona formation and break- down. The key is to couple the...leading to a spark discharge in the accelerator and thus a breakdown of the electrostatic field [6], [7]. Figure 1.1: Cockroft-Walton cascade generator

Computational Simulation of Explosively Generated Pulsed Power Devices

DTIC Science & Technology

2013-03-21

to practical applications. These are the magnetic flux compression generators (FCG), ferromagnetic generators (FMG) and ferroelectric generators (FEG...The first device works on the concept of field interaction between a conducting medium and a magnetic field. The last two devices make use of either... magnetic or electric fields stored in a prepared material (4). This research will focus on the ferroelectric generator as a high voltage source for

Biological Effects of Nonionizing Electromagnetic Radiation. Volume IV. Number 3.

DTIC Science & Technology

1980-03-01

lines that produce EMR. perimental evidence on human health effects due to electromagnetic field exposures from high-voltage transmission lines is...1311, Mrch YOW that a permissible occupational exposure level to The biologic effects of electromagnetic fields on MW and RF radiation of 500 PW/cm 2...along with the principal physical param- eters of exposure . 6402 REGULATING POSSIBLE HEALTH EFFECTS FROM AC TRANSMISSION LINE ELECTROMAGNETIC FIELDS

NO Removal with Repetitive Discharges Caused by Reciprocal Traveling Wave Voltage Pulse in a Coaxial Cable

NASA Astrophysics Data System (ADS)

Yamaga, Keisuke; Kadowaki, Kazunori; Nishimoto, Sakae; Kitani, Isamu

This paper describes experimental results of NO removal using barrier discharges produced by a reciprocal pulse generator. When a coaxial cable is charged and then grounded at one end of the cable without any resistance, a reciprocal traveling voltage pulse is repeatedly applied to a barrier-type reactor at the opposite end with a change in its polarity. 50% streamer initiation voltage for the reciprocal pulse generator was much smaller than that with the self-matched pulse generator having a matching resistance. The reason for the low initiation voltage in the reciprocal pulse was that space charges which accumulated on the barrier surface during cable charging had an effect on field enhancement in the reactor after the first polarity reversal. High speed photographs of discharge light produced by the reciprocal pulse showed that the voltage oscillation caused by one switching induced alternate propagation of positive and negative streamers with a very high frequency. In measurements of NO concentration, the reciprocal pulse generator gave a better performance for NO removal ratio than the self-matched pulse generator even though the stored energy in the recipocal pulse generator was very low.

Development of design technique for vacuum insulation in large size multi-aperture multi-grid accelerator for nuclear fusion.

PubMed

Kojima, A; Hanada, M; Tobari, H; Nishikiori, R; Hiratsuka, J; Kashiwagi, M; Umeda, N; Yoshida, M; Ichikawa, M; Watanabe, K; Yamano, Y; Grisham, L R

2016-02-01

Design techniques for the vacuum insulation have been developed in order to realize a reliable voltage holding capability of multi-aperture multi-grid (MAMuG) accelerators for fusion application. In this method, the nested multi-stage configuration of the MAMuG accelerator can be uniquely designed to satisfy the target voltage within given boundary conditions. The evaluation of the voltage holding capabilities of each acceleration stages was based on the previous experimental results about the area effect and the multi-aperture effect. Since the multi-grid effect was found to be the extension of the area effect by the total facing area this time, the total voltage holding capability of the multi-stage can be estimated from that per single stage by assuming the stage with the highest electric field, the total facing area, and the total apertures. By applying these consideration, the analysis on the 3-stage MAMuG accelerator for JT-60SA agreed well with the past gap-scan experiments with an accuracy of less than 10% variation, which demonstrated the high reliability to design MAMuG accelerators and also multi-stage high voltage bushings.

Non-Contact Thermal Characterization of NASA's HERMeS Hall Thruster

NASA Technical Reports Server (NTRS)

Huang, Wensheng; Kamhawi, Hani; Myers, James L.; Yim, John T.; Neff, Gregory

2015-01-01

The thermal characterization test of NASA's 12.5-kW Hall Effect Rocket with Magnetic Shielding has been completed. This thruster was developed to support a number of potential Solar Electric Propulsion Technology Demonstration Mission concepts, including the Asteroid Redirect Robotic Mission concept. As a part of the preparation for this characterization test, an infrared-based, non-contact thermal imaging system was developed to measure the temperature of various thruster surfaces that are exposed to high voltage or plasma. An in-situ calibration array was incorporated into the setup to improve the accuracy of the temperature measurement. The key design parameters for the calibration array were determined in a separate pilot test. The raw data from the characterization test was analyzed though further work is needed to obtain accurate anode temperatures. Examination of the front pole and discharge channel temperatures showed that the thruster temperature was driven more by discharge voltage than by discharge power. Operation at lower discharge voltages also yielded more uniform temperature distributions than at higher discharge voltages. When operating at high discharge voltage, increasing the magnetic field strength appeared to have made the thermal loading azimuthally more uniform.

Breakdown voltage reduction by field emission in multi-walled carbon nanotubes based ionization gas sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saheed, M. Shuaib M.; Muti Mohamed, Norani; Arif Burhanudin, Zainal, E-mail: zainabh@petronas.com.my

2014-03-24

Ionization gas sensors using vertically aligned multi-wall carbon nanotubes (MWCNT) are demonstrated. The sharp tips of the nanotubes generate large non-uniform electric fields at relatively low applied voltage. The enhancement of the electric field results in field emission of electrons that dominates the breakdown mechanism in gas sensor with gap spacing below 14 μm. More than 90% reduction in breakdown voltage is observed for sensors with MWCNT and 7 μm gap spacing. Transition of breakdown mechanism, dominated by avalanche electrons to field emission electrons, as decreasing gap spacing is also observed and discussed.

Rhenium Disulfide Depletion-Load Inverter

NASA Astrophysics Data System (ADS)

McClellan, Connor; Corbet, Chris; Rai, Amritesh; Movva, Hema C. P.; Tutuc, Emanuel; Banerjee, Sanjay K.

2015-03-01

Many semiconducting Transition Metal Dichalcogenide (TMD) materials have been effectively used to create Field-Effect Transistor (FET) devices but have yet to be used in logic designs. We constructed a depletion-load voltage inverter using ultrathin layers of Rhenium Disulfide (ReS2) as the semiconducting channel. This ReS2 inverter was fabricated on a single micromechanically-exfoliated flake of ReS2. Electron beam lithography and physical vapor deposition were used to construct Cr/Au electrical contacts, an Alumina top-gate dielectric, and metal top-gate electrodes. By using both low (Aluminum) and high (Palladium) work-function metals as two separate top-gates on a single ReS2 flake, we create a dual-gated depletion mode (D-mode) and enhancement mode (E-mode) FETs in series. Both FETs displayed current saturation in the output characteristics as a result of the FET ``pinch-off'' mechanism and On/Off current ratios of 105. Field-effect mobilities of 23 and 17 cm2V-1s-1 and subthreshold swings of 97 and 551 mV/decade were calculated for the E-mode and D-mode FETs, respectively. With a supply voltage of 1V, at low/negative input voltages the inverter output was at a high logic state of 900 mV. Conversely with high/positive input voltages, the inverter output was at a low logic state of 500 mV. The inversion of the input signal demonstrates the potential for using ReS2 in future integrated circuit designs and the versatility of depletion-load logic devices for TMD research. NRI SWAN Center and ARL STTR Program.

MAGNETOMETER

DOEpatents

Leavitt, M.A.

1958-11-18

A magnetometer ls described, partlcularly to a device which accurately indicates the polarity and intensity of a magnetlc field. The main feature of the invention is a unique probe construction in combinatlon wlth a magnetic fleld detector system. The probe comprises two coils connected in series opposition for energization with an a-c voltage. The voltage lnduced in a third coll on the probe, a pick-up coil, is distorted by the presence of an external field to produce even harmonic voltages. A controlled d-c current is passed through the energized coils to counter the dlstortlon and reduce tbe even harmonic content to a null. When the null point is reached, the d-c current is a measure of the external magnetic field strength, and the phase of the pickup coil voltage indicates tbe field polarlty.

Electric field measurements in a near atmospheric pressure nanosecond pulse discharge with picosecond electric field induced second harmonic generation

NASA Astrophysics Data System (ADS)

Goldberg, Benjamin M.; Chng, Tat Loon; Dogariu, Arthur; Miles, Richard B.

2018-02-01

We present an optical electric field measurement method for use in high pressure plasma discharges. The method is based upon the field induced second harmonic generation technique and can be used for localized electric field measurements with sub-nanosecond resolution in any gaseous species. When an external electric field is present, a dipole is induced in the typically centrosymmetric medium, allowing for second harmonic generation with signal intensities which scale by the square of the electric field. Calibrations have been carried out in 100 Torr room air, and a minimum sensitivity of 450 V/cm is demonstrated. Measurements were performed with nanosecond or faster temporal resolution in a 100 Torr room air environment both with and without a plasma present. It was shown that with no plasma present, the field follows the applied voltage to gap ratio, as measured using the back current shunt method. When the electric field is strong enough to exceed the breakdown threshold, the measured field was shown to exceed the anticipated voltage to gap ratio which is taken as an indication of the ionization wave front as it sweeps through the plasma volume.

An Electrolyte-Free Conducting Polymer Actuator that Displays Electrothermal Bending and Flapping Wing Motions under a Magnetic Field.

PubMed

Uh, Kyungchan; Yoon, Bora; Lee, Chan Woo; Kim, Jong-Man

2016-01-20

Electroactive materials that change shape in response to electrical stimulation can serve as actuators. Electroactive actuators of this type have great utility in a variety of technologies, including biomimetic artificial muscles, robotics, and sensors. Electroactive actuators developed to date often suffer from problems associated with the need to use electrolytes, slow response times, high driving voltages, and short cycle lifetimes. Herein, we report an electrolyte-free, single component, polymer electroactive actuator, which has a fast response time, high durability, and requires a low driving voltage (<5 V). The process employed for production of this material involves wet-spinning of a preorganized camphorsulfonic acid (CSA)-doped polyaniline (PANI) gel, which generates long, flexible, and conductive (∼270 S/cm) microfibers. Reversible bending motions take place upon application of an alternating current (AC) to the PANI polymer. This motion, promoted by a significantly low driving voltage (<0.5 V) in the presence of an external magnetic field, has a very large swinging speed (9000 swings/min) that lies in the range of those of flies and bees (1000-15000 swings/min) and is fatigue-resistant (>1000000 cycles).

High Voltage Dielectrophoretic and Magnetophoretic Hybrid Integrated Circuit / Microfluidic Chip

PubMed Central

Issadore, David; Franke, Thomas; Brown, Keith A.; Hunt, Thomas P.; Westervelt, Robert M.

2010-01-01

A hybrid integrated circuit (IC) / microfluidic chip is presented that independently and simultaneously traps and moves microscopic objects suspended in fluid using both electric and magnetic fields. This hybrid chip controls the location of dielectric objects, such as living cells and drops of fluid, on a 60 × 61 array of pixels that are 30 × 38 μm2 in size, each of which can be individually addressed with a 50 V peak-to-peak, DC to 10 MHz radio frequency voltage. These high voltage pixels produce electric fields above the chip’s surface with a magnitude , resulting in strong dielectrophoresis (DEP) forces . Underneath the array of DEP pixels there is a magnetic matrix that consists of two perpendicular sets of 60 metal wires running across the chip. Each wire can be sourced with 120 mA to trap and move magnetically susceptible objects using magnetophoresis (MP). The DEP pixel array and magnetic matrix can be used simultaneously to apply forces to microscopic objects, such as living cells or lipid vesicles, that are tagged with magnetic nanoparticles. The capabilities of the hybrid IC / microfluidic chip demonstrated in this paper provide important building blocks for a platform for biological and chemical applications. PMID:20625468

High Voltage Dielectrophoretic and Magnetophoretic Hybrid Integrated Circuit / Microfluidic Chip.

PubMed

Issadore, David; Franke, Thomas; Brown, Keith A; Hunt, Thomas P; Westervelt, Robert M

2009-12-01

A hybrid integrated circuit (IC) / microfluidic chip is presented that independently and simultaneously traps and moves microscopic objects suspended in fluid using both electric and magnetic fields. This hybrid chip controls the location of dielectric objects, such as living cells and drops of fluid, on a 60 × 61 array of pixels that are 30 × 38 μm(2) in size, each of which can be individually addressed with a 50 V peak-to-peak, DC to 10 MHz radio frequency voltage. These high voltage pixels produce electric fields above the chip's surface with a magnitude , resulting in strong dielectrophoresis (DEP) forces . Underneath the array of DEP pixels there is a magnetic matrix that consists of two perpendicular sets of 60 metal wires running across the chip. Each wire can be sourced with 120 mA to trap and move magnetically susceptible objects using magnetophoresis (MP). The DEP pixel array and magnetic matrix can be used simultaneously to apply forces to microscopic objects, such as living cells or lipid vesicles, that are tagged with magnetic nanoparticles. The capabilities of the hybrid IC / microfluidic chip demonstrated in this paper provide important building blocks for a platform for biological and chemical applications.

A novel gate and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and ambipolar nature

NASA Astrophysics Data System (ADS)

Yadav, Dharmendra Singh; Raad, Bhagwan Ram; Sharma, Dheeraj

2016-12-01

In this paper, we focus on the improvement of figures of merit for charge plasma based tunnel field-effect transistor (TFET) in terms of ON-state current, threshold voltage, sub-threshold swing, ambipolar nature, and gate to drain capacitance which provides better channel controlling of the device with improved high frequency response at ultra-low supply voltages. Regarding this, we simultaneously employ work function engineering on the drain and gate electrode of the charge plasma TFET. The use of gate work function engineering modulates the barrier on the source/channel interface leads to improvement in the ON-state current, threshold voltage, and sub-threshold swing. Apart from this, for the first time use of work function engineering on the drain electrode increases the tunneling barrier for the flow of holes on the drain/channel interface, it results into suppression of ambipolar behavior. The lowering of gate to drain capacitance therefore enhanced high frequency parameters. Whereas, the presence of dual work functionality at the gate electrode and over the drain region improves the overall performance of the charge plasma based TFET.