Multilevel cascade voltage source inverter with seperate DC sources

DOEpatents

Peng, Fang Zheng; Lai, Jih-Sheng

2001-04-03

A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

Multilevel cascade voltage source inverter with separate DC sources

DOEpatents

Peng, F.Z.; Lai, J.S.

1997-06-24

A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations. 15 figs.

Electrical safety for high voltage arrays

NASA Technical Reports Server (NTRS)

Marshall, N. A.

1983-01-01

A number of key electrical safety requirements for the high voltage arrays of central station photovoltaic power systems are explored. The suitability of representative industrial DC power switchgear for control and fault protection was evaluated. Included were AC/DC circuit breakers, electromechanical contactors and relays, load interruptors, cold disconnect devices, sectionalizing switches, and high voltage DC fuses. As appropriate, steady state and transient characteristics were analyzed. Failure modes impacting upon operation and maintenance safety were also identified, as were the voltage withstand and current interruption levels.

Determination of threshold and maximum operating electric stresses for selected high voltage insulations. Task 2: Investigation of oil-filled paper insulated cables

NASA Astrophysics Data System (ADS)

Sosnowski, M.; Eager, G. S., Jr.

1983-06-01

Threshold voltage of oil-impregnated paper insulated cables are investigaed. Experimental work was done on model cables specially manufactured for this project. The cables were impregnated with mineral and with synthetic oils. Standard impulse breakdown voltage tests and impulse voltage breakdown tests with dc prestressing were performed at room temperature and at 1000C. The most important result is the finding of very high level of threshold voltage stress for oil-impregnated paper insulated cables. This threshold voltage is approximately 1.5 times higher than the threshold voltage or crosslinked polyethylene insulated cables.

High Voltage Design Concepts for Launch Vehicles and Orbital Spacecraft Applications

NASA Technical Reports Server (NTRS)

Hall, David K.; Kirkici, Hulya; Hillard, G. Barry; Schweickart, Daniel; Dunbar, Bill

2000-01-01

With the advent of design concepts such as, electromechanical actuation and "more electric" initiatives, has come the need for electrical power buses and electronic equipment to operate at higher than normal dc voltages to meet power requirements while keeping current levels to manageable levels. This new bus voltage has been typically 270 Volts dc nominal for launch vehicles, and 120 Volt dc for the International Space Station. This paper will discuss the new design applications for high voltage dc power in existing and future launch vehicles and spacecraft and the potential problems associated therewith. These new applications must be operational from lift-off, ascent, on orbit and descent in all of the pressure and temperature conditions for each, i.e. through the "Paschen region" twice. This paper will also attempt to stimulate an interest in the academic and professional communities to support and conduct research needed for design data applicable to high voltage dc usage.

Electrostatic shielding of transformers

DOEpatents

De Leon, Francisco

2017-11-28

Toroidal transformers are currently used only in low-voltage applications. There is no published experience for toroidal transformer design at distribution-level voltages. Toroidal transformers are provided with electrostatic shielding to make possible high voltage applications and withstand the impulse test.

Design considerations for large space electric power systems

NASA Technical Reports Server (NTRS)

Renz, D. D.; Finke, R. C.; Stevens, N. J.; Triner, J. E.; Hansen, I. G.

1983-01-01

As power levels of spacecraft rise to the 50 to 100 kW range, it becomes apparent that low voltage (28 V) dc power distribution and management systems will not operate efficiently at these higher power levels. The concept of transforming a solar array voltage at 150 V dc into a 1000 V ac distribution system operating at 20 kHz is examined. The transformation is accomplished with series-resonant inverter by using a rotary transformer to isolate the solar array from the spacecraft. The power can then be distributed in any desired method such as three phase delta to delta. The distribution voltage can be easily transformed to any desired load voltage and operating frequency. The reasons for the voltage limitations on the solar array due to plasma interactions and the many advantages of a high voltage, high frequency at distribution system are discussed.

Numerical investigation of the effect of driving voltage pulse shapes on the characteristics of low-pressure argon dielectric barrier discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eslami, E., E-mail: eeslami@iust.ac.ir; Barjasteh, A.; Morshedian, N.

2015-06-15

In this work, we numerically compare the effect of a sinusoidal, triangular, and rectangular pulsed voltage profile on the calculated particle production, electric current, and gas voltage in a dielectric barrier discharge. The total argon gas pressure of 400 Pa, the distance between dielectrics of 5 mm, the dielectric thickness of 0.7 mm, and the temperature of T = 300 K were considered as input parameters. The different driving voltage pulse shapes (triangular, rectangular, and sinusoidal) are considered as applied voltage with a frequency of 7 kHz and an amplitude of 700 V peak to peak. It is shown thatmore » applying a rectangular voltage, as compared with a sinusoidal or triangle voltage, increases the current peak, while the peak width is decreased. Higher current density is related to high production of charged particles, which leads to the generation of some highly active species, such as Ar* (4s level), and Ar** (4p level) in the gap.« less

Multijunction high voltage concentrator solar cells

NASA Technical Reports Server (NTRS)

Valco, G. J.; Kapoor, V. J.; Evans, J. C.; Chai, A.-T.

1981-01-01

The standard integrated circuit technology has been developed to design and fabricate new innovative planar multi-junction solar cell chips for concentrated sunlight applications. This 1 cm x 1 cm cell consisted of several voltage generating regions called unit cells which were internally connected in series within a single chip resulting in high open circuit voltages. Typical open-circuit voltages of 3.6 V and short-circuit currents of 90 ma were obtained at 80 AM1 suns. A dramatic increase in both short circuit current and open circuit voltage with increased light levels was observed.

DIFFERENTIAL FAULT SENSING CIRCUIT

DOEpatents

Roberts, J.H.

1961-09-01

A differential fault sensing circuit is designed for detecting arcing in high-voltage vacuum tubes arranged in parallel. A circuit is provided which senses differences in voltages appearing between corresponding elements likely to fault. Sensitivity of the circuit is adjusted to some level above which arcing will cause detectable differences in voltage. For particular corresponding elements, a group of pulse transformers are connected in parallel with diodes connected across the secondaries thereof so that only voltage excursions are transmitted to a thyratron which is biased to the sensitivity level mentioned.

The simulation on diode-clamped five-level converters common-mode voltage suppression with zero-vector PWM strategy

NASA Astrophysics Data System (ADS)

Zhang, Yonggao; Gao, Yanli; Long, Lizhong

2012-04-01

More and more researchers have great concern on the issue of Common-mode voltage (CMV) in high voltage large power converter. A novel common-mode voltage suppression scheme based on zero-vector PWM strategy (ZVPWM) is present in this paper. Taking a diode-clamped five-level converter as example, the principle of zero vector PWM common-mode voltage (ZCMVPWM) suppression method is studied in detail. ZCMVPWM suppression strategy is including four important parts, which are locating the sector of reference voltage vector, locating the small triangular sub-sector of reference voltage vector, reference vector synthesis, and calculating the operating time of vector. The principles of four important pars are illustrated in detail and the corresponding MATLAB models are established. System simulation and experimental results are provided. It gives some consultation value for the development and research of multi-level converters.

PV source based high voltage gain current fed converter

NASA Astrophysics Data System (ADS)

Saha, Soumya; Poddar, Sahityika; Chimonyo, Kudzai B.; Arunkumar, G.; Elangovan, D.

2017-11-01

This work involves designing and simulation of a PV source based high voltage gain, current fed converter. It deals with an isolated DC-DC converter which utilizes boost converter topology. The proposed converter is capable of high voltage gain and above all have very high efficiency levels as proved by the simulation results. The project intends to produce an output of 800 V dc from a 48 V dc input. The simulation results obtained from PSIM application interface were used to analyze the performance of the proposed converter. Transformer used in the circuit steps up the voltage as well as to provide electrical isolation between the low voltage and high voltage side. Since the converter involves high switching frequency of 100 kHz, ultrafast recovery diodes are employed in the circuitry. The major application of the project is for future modeling of solar powered electric hybrid cars.

Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

NASA Technical Reports Server (NTRS)

Adell, Philippe C.; Mojarradi, Mohammad; DelCastillo, Linda Y.; Vo, Tuan A.

2011-01-01

A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

Characterization of Low Noise, Precision Voltage Reference REF5025-HT Under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2010-01-01

The performance of Texas Instruments precision voltage reference REF5025-HT was assessed under extreme temperatures. This low noise, 2.5 V output chip is suitable for use in high temperature down-hole drilling applications, but no data existed on its performance at cryogenic temperatures. The device was characterized in terms of output voltage and supply current at different input voltage levels as a function of temperature between +210 C and -190 C. Line and load regulation characteristics were also established at six load levels and at different temperatures. Restart capability at extreme temperatures and the effects of thermal cycling, covering the test temperature range, on its operation and stability were also investigated. Under no load condition, the voltage reference chip exhibited good stability in its output over the temperature range of -50 C to +200 C. Outside that temperature range, output voltage did change as temperature was changed. For example, at the extreme temperatures of +210 C and - 190 C, the output level dropped to 2.43 V and 2.32 V, respectively as compared to the nominal value of 2.5 V. At cryogenic test temperatures of -100 C and -150 C the output voltage dropped by about 20%. The quiescent supply current of the voltage reference varied slightly with temperature but remained close to its specified value. In terms of line regulation, the device exhibited excellent stability between -50 C and +150 C over the entire input voltage range and load levels. At the other test temperatures, however, while line regulation became poor at cryogenic temperatures of -100 C and below, it suffered slight degradation at the extreme high temperature but only at the high load level of 10 mA. The voltage reference also exhibited very good load regulation with temperature down to -100 C, but its output dropped sharply at +210 C only at the heavy load of 10 mA. The semiconductor chip was able restart at the extreme temperatures of -190 C and +210 C, and the limited thermal cycling did not influence its characteristics and had no impact on its packaging as no structural or physical damage was observed.

On the reliability of voltage and power as input parameters for the characterization of high power ultrasound applications

NASA Astrophysics Data System (ADS)

Haller, Julian; Wilkens, Volker

2012-11-01

For power levels up to 200 W and sonication times up to 60 s, the electrical power, the voltage and the electrical impedance (more exactly: the ratio of RMS voltage and RMS current) have been measured for a piezocomposite high intensity therapeutic ultrasound (HITU) transducer with integrated matching network, two piezoceramic HITU transducers with external matching networks and for a passive dummy 50 Ω load. The electrical power and the voltage were measured during high power application with an inline power meter and an RMS voltage meter, respectively, and the complex electrical impedance was indirectly measured with a current probe, a 100:1 voltage probe and a digital scope. The results clearly show that the input RMS voltage and the input RMS power change unequally during the application. Hence, the indication of only the electrical input power or only the voltage as the input parameter may not be sufficient for reliable characterizations of ultrasound transducers for high power applications in some cases.

Grid Integration of Single Stage Solar PV System using Three-level Voltage Source Converter

NASA Astrophysics Data System (ADS)

Hussain, Ikhlaq; Kandpal, Maulik; Singh, Bhim

2016-08-01

This paper presents a single stage solar PV (photovoltaic) grid integrated power generating system using a three level voltage source converter (VSC) operating at low switching frequency of 900 Hz with robust synchronizing phase locked loop (RS-PLL) based control algorithm. To track the maximum power from solar PV array, an incremental conductance algorithm is used and this maximum power is fed to the grid via three-level VSC. The use of single stage system with three level VSC offers the advantage of low switching losses and the operation at high voltages and high power which results in enhancement of power quality in the proposed system. Simulated results validate the design and control algorithm under steady state and dynamic conditions.

A DC Transformer

NASA Technical Reports Server (NTRS)

Youngquist, Robert C.; Ihlefeld, Curtis M.; Starr, Stanley O.

2013-01-01

A component level dc transformer is described in which no alternating currents or voltages are present. It operates by combining features of a homopolar motor and a homopolar generator, both de devices, such that the output voltage of a de power supply can be stepped up (or down) with a corresponding step down (or up) in current. The basic theory for this device is developed, performance predictions are made, and the results from a small prototype are presented. Based on demonstrated technology in the literature, this de transformer should be scalable to low megawatt levels, but it is more suited to high current than high voltage applications. Significant development would be required before it could achieve the kilovolt levels needed for de power transmission.

Measurement and statistical analysis of single-molecule current-voltage characteristics, transition voltage spectroscopy, and tunneling barrier height.

PubMed

Guo, Shaoyin; Hihath, Joshua; Díez-Pérez, Ismael; Tao, Nongjian

2011-11-30

We report on the measurement and statistical study of thousands of current-voltage characteristics and transition voltage spectra (TVS) of single-molecule junctions with different contact geometries that are rapidly acquired using a new break junction method at room temperature. This capability allows one to obtain current-voltage, conductance voltage, and transition voltage histograms, thus adding a new dimension to the previous conductance histogram analysis at a fixed low-bias voltage for single molecules. This method confirms the low-bias conductance values of alkanedithiols and biphenyldithiol reported in literature. However, at high biases the current shows large nonlinearity and asymmetry, and TVS allows for the determination of a critically important parameter, the tunneling barrier height or energy level alignment between the molecule and the electrodes of single-molecule junctions. The energy level alignment is found to depend on the molecule and also on the contact geometry, revealing the role of contact geometry in both the contact resistance and energy level alignment of a molecular junction. Detailed statistical analysis further reveals that, despite the dependence of the energy level alignment on contact geometry, the variation in single-molecule conductance is primarily due to contact resistance rather than variations in the energy level alignment.

High-Voltage Clock Driver for Photon-Counting CCD Characterization

NASA Technical Reports Server (NTRS)

Baker, Robert

2013-01-01

A document discusses the CCD97 from e2v technologies as it is being evaluated at Goddard Space Flight Center's Detector Characterization Laboratory (DCL) for possible use in ultra-low background noise space astronomy applications, such as Terrestrial Planet Finder Coronagraph (TPF-C). The CCD97 includes a photoncounting mode where the equivalent output noise is less than one electron. Use of this mode requires a clock signal at a voltage level greater than the level achievable by the existing CCD (charge-coupled-device) electronics. A high-voltage waveform generator has been developed in code 660/601 to support the CCD97 evaluation. The unit generates required clock waveforms at voltage levels from -20 to +50 V. It deals with standard and arbitrary waveforms and supports pixel rates from 50 to 500 kHz. The system is designed to interface with existing Leach CCD electronics.

SEMICONDUCTOR INTEGRATED CIRCUITS: A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure

NASA Astrophysics Data System (ADS)

Jizhi, Liu; Xingbi, Chen

2009-12-01

A new quasi-three-dimensional (quasi-3D) numeric simulation method for a high-voltage level-shifting circuit structure is proposed. The performances of the 3D structure are analyzed by combining some 2D device structures; the 2D devices are in two planes perpendicular to each other and to the surface of the semiconductor. In comparison with Davinci, the full 3D device simulation tool, the quasi-3D simulation method can give results for the potential and current distribution of the 3D high-voltage level-shifting circuit structure with appropriate accuracy and the total CPU time for simulation is significantly reduced. The quasi-3D simulation technique can be used in many cases with advantages such as saving computing time, making no demands on the high-end computer terminals, and being easy to operate.

Experiments of a 100 kV-level pulse generator based on metal-oxide varistor

NASA Astrophysics Data System (ADS)

Cui, Yan-cheng; Wu, Qi-lin; Yang, Han-wu; Gao, Jing-ming; Li, Song; Shi, Cheng-yu

2018-03-01

This paper introduces the development and experiments of a 100 kV-level pulse generator based on a metal-oxide varistor (MOV). MOV has a high energy handling capacity and nonlinear voltage-current (V-I) characteristics, which makes it useful for high voltage pulse shaping. Circuit simulations based on the measured voltage-current characteristics of MOV verified the shaping concept and showed that a circuit containing a two-section pulse forming network (PFN) will result in better defined square pulse than a simple L-C discharging circuit. A reduced-scale experiment was carried out and the result agreed well with simulation prediction. Then a 100 kV-level pulse generator with multiple MOVs in a stack and a two-section pulse forming network (PFN) was experimented. A pulse with a voltage amplitude of 90 kV, rise time of about 50 ns, pulse width of 500 ns, and flat top of about 400 ns was obtained with a water dummy load of 50 Ω. The results reveal that the combination of PFN and MOV is a practical way to generate high voltage pulses with better flat top waveforms, and the load voltage is stable even if the load's impedance varies. Such pulse generator can be applied in many fields such as surface treatment, corona plasma generation, industrial dedusting, and medical disinfection.

Improved High/Low Junction Silicon Solar Cell

NASA Technical Reports Server (NTRS)

Neugroschel, A.; Pao, S. C.; Lindholm, F. A.; Fossum, J. G.

1986-01-01

Method developed to raise value of open-circuit voltage in silicon solar cells by incorporating high/low junction in cell emitter. Power-conversion efficiency of low-resistivity silicon solar cell considerably less than maximum theoretical value mainly because open-circuit voltage is smaller than simple p/n junction theory predicts. With this method, air-mass-zero opencircuit voltage increased from 600 mV level to approximately 650 mV.

High-voltage crowbar circuit with cascade-triggered series ignitrons

DOEpatents

Baker, William R. [Orinda, CA

1980-11-04

A series string of ignitrons for switching a large current at high voltage to ground. Switching is initiated by means of a negative trigger pulse applied to the cathode of the lowest voltage level ignitron next to ground to draw ground current through diodes in the ignitor circuit. The trigger pulse is applied thereby to the next higher ignitron cathode and sequentially to the remainder of the ignitrons in the string through diodes in respective ignitor circuits. Full line voltage is held off of nonconducting diodes and ignitrons by means of varistors.

High-voltage crowbar circuit with cascade-triggered series ignitrons

DOEpatents

Baker, W.R.

A series string of ignitrons for switching a large current at high voltage to ground is discussed. Switching is initiated by means of a negative trigger pulse applied to the cathode of the lowest voltage level ignitron next to ground to draw ground current through diodes in the ignitor circuit. The trigger pulse is applied thereby to the next higher ignitron cathode and sequentially to the remainder of the ignitrons in the string through diodes in respective ignitor circuits. Full line voltage is held off of nonconducting diodes and ignitrons by means of varistors.

High-voltage crowbar circuit with cascade-triggered series ignitrons

DOEpatents

Baker, W.R.

1980-11-04

A series string of ignitrons for switching a large current at high voltage to ground. Switching is initiated by means of a negative trigger pulse applied to the cathode of the lowest voltage level ignitron next to ground to draw ground current through diodes in the ignitor circuit. The trigger pulse is applied thereby to the next higher ignitron cathode and sequentially to the remainder of the ignitrons in the string through diodes in respective ignitor circuits. Full line voltage is held off of nonconducting diodes and ignitrons by means of varistors. 1 fig.

Special features of large-size resistors for high-voltage pulsed installations

NASA Astrophysics Data System (ADS)

Minakova, N. N.; Ushakov, V. Ya.

2017-12-01

Many structural materials in pulsed power engineering operate under extreme conditions. For example, in high-voltage electrophysical installations among which there are multistage high-voltage pulse generators (HVPG), rigid requirements are imposed on characteristics of solid-state resistors that are more promising in comparison with widely used liquid resistors. Materials of such resistors shall be able to withstand strong electric fields, operate at elevated temperatures, in transformer oil, etc. Effective charge of high-voltage capacitors distributed over the HVPG steps (levels) requires uniform voltage distribution along the steps of the installation that can be obtained using large-size resistors. For such applications, polymer composite materials are considered rather promising. They can work in transformer oil and have small mass in comparison with bulky resistors on inorganic basis. This allows technical solutions already developed and implemented in HVPG with liquid resistors to be employed. This paper is devoted to the solution of some tasks related to the application of filled polymers in high-voltage engineering.

Multiple high voltage output DC-to-DC power converter

NASA Technical Reports Server (NTRS)

Cronin, Donald L. (Inventor); Farber, Bertrand F. (Inventor); Gehm, Hartmut K. (Inventor); Goldin, Daniel S. (Inventor)

1977-01-01

Disclosed is a multiple output DC-to-DC converter. The DC input power is filtered and passed through a chopper preregulator. The chopper output is then passed through a current source inverter controlled by a squarewave generator. The resultant AC is passed through the primary winding of a transformer, with high voltages induced in a plurality of secondary windings. The high voltage secondary outputs are each solid-state rectified for passage to individual output loads. Multiple feedback loops control the operation of the chopper preregulator, one being responsive to the current through the primary winding and another responsive to the DC voltage level at a selected output.

High voltage interactions of a sounding rocket with the ambient and system-generated environments

NASA Technical Reports Server (NTRS)

Kuharski, Robert A.; Jongeward, Gary A.; Wilcox, Katherine G.; Rankin, Thomas V.; Roche, James C.

1990-01-01

EPSAT (environment power system analysis tool) is used to examine the design of SPEAR III, which is scheduled to fly in early 1991. It will test high-voltage designs in both ambient and system-generated environments. Two of the key questions that the experiment hopes to address are whether or not the earth's magnetic field can cause the current that a high-voltage object draws from the plasma to be far less than the current that would be drawn in the absence of the magnetic field and under what neutral environmental conditions a discharge from the high-voltage object to the plasma will occur. The EPSAT program makes it possible to perform a variety of analyses on a preliminary or conceptual-level description of a system in a short period of time. The calculations presented on SPEAR III are all done for a conceptual-level description. The calculations indicate that the experiment will produce the conditions necessary to address these questions.

A new low voltage level-shifted FVF current mirror with enhanced bandwidth and output resistance

NASA Astrophysics Data System (ADS)

Aggarwal, Bhawna; Gupta, Maneesha; Gupta, Anil Kumar; Sangal, Ankur

2016-10-01

This paper proposes a new high-performance level-shifted flipped voltage follower (LSFVF) based low-voltage current mirror (CM). The proposed CM utilises the low-supply voltage and low-input resistance characteristics of a flipped voltage follower (FVF) CM. In the proposed CM, level-shifting configuration is used to obtain a wide operating current range and resistive compensation technique is employed to increase the operating bandwidth. The peaking in frequency response is reduced by using an additional large MOSFET. Moreover, a very high output resistance (in GΩ range) along with low-current transfer error is achieved through super-cascode configuration for a wide current range (0-440 µA). Small signal analysis is carried out to show the improvements achieved at each step. The proposed CM is simulated by Mentor Graphics Eldospice in TSMC 0.18 µm CMOS, BSIM3 and Level 53 technology. In the proposed CM, a bandwidth of 6.1799 GHz, 1% settling time of 0.719 ns, input and output resistances of 21.43 Ω and 1.14 GΩ, respectively, are obtained with a single supply voltage of 1 V. The layout of the proposed CM has been designed and post-layout simulation results have been shown. The post-layout simulation results for Monte Carlo and temperature analysis have also been included to show the reliability of the CM against the variations in process parameters and temperature changes.

Performance analysis of cascaded h-bridge multilevel inverter using mixed switching frequency with various dc-link voltages

NASA Astrophysics Data System (ADS)

Citarsa, I. B. F.; Satiawan, I. N. W.; Wiryajati, I. K.; Supriono

2016-01-01

Multilevel inverters have been widely used in many applications since the technology is advantageous to increase the converter capability as well as to improve the output voltage quality. According to the applied switching frequency, multilevel modulations can be subdivided into three classes, i.e: fundamental switching frequency, high switching frequency and mixed switching frequency. This paper investigates the performance of cascaded H-bridge (CHB) multilevel inverter that is modulated using mixed switching frequency (MSF) PWM with various dc-link voltage ratios. The simulation results show the nearly sinusoidal load output voltages are successfully achieved. It is revealed that there is improvement in output voltages quality in terms of THD and low-order harmonics content. The CHB inverter that is modulated using MSF PWM with equal dc-link voltage ratio (½ Vdc: ½ Vdc) produces output voltage with the lowest low-order harmonics (less than 1% of fundamental) while the CHB inverter that is modulated using MSF PWM with un-equal dc-link voltage ratio (2/3 Vdc: 1/3 Vdc) produces a 7-level output voltage with the lowest THD (16.31%) compared to the other PWM methods. Improvement of the output voltage quality here is also in line with improvement of the number of available levels provided in the output voltage. Here only 2 cells H-bridge inverter (contain 8 switches) are needed to produce a 7- level output voltage, while in the conventional CHB inverter at least 3 cells of H-bridge inverter (contain 12 switches) are needed to produce a 7-level output voltage. Hence it is valuable in term of saving number of component.

Liquid Nitrogen as Fast High Voltage Switching Medium

NASA Astrophysics Data System (ADS)

Dickens, J.; Neuber, A.; Haustein, M.; Krile, J.; Krompholz, H.

2002-12-01

Compact pulsed power systems require new switching technologies. For high voltages, liquid nitrogen seems to be a suitable switching medium, with high hold-off voltage, low dielectric constant, and no need for pressurized systems as in high pressure gas switches. The discharge behavior in liquid nitrogen, such as breakdown voltages, formative times, current rise as function of voltage, recovery, etc. are virtually unknown, however. The phenomenology of breakdown in liquid nitrogen is investigated with high speed (temporal resolution < 1 ns) electrical and optical diagnostics, in a coaxial system with 50-Ohm impedance. Discharge current and voltage are determined with transmission line type current sensors and capacitive voltage dividers. The discharge luminosity is measured with photomultiplier tubes. Preliminary results of self-breakdown investigations (gap 1 mm, breakdown voltage 44 kV, non-boiling supercooled nitrogen) show a fast (2 ns) transition from an unknown current level to several mA, a long-duration (100 ns) phase with constant current superimposed by ns-spikes, and a final fast transition to the impedance limited current during several nanoseconds. The optical measurements will be expanded toward spectroscopy and high speed photography with the aim of clarifying the overall breakdown mechanisms, including electronic initiation, bubble formation, bubble dynamics, and their role in breakdown, for different electrode geometries (different macroscopic field enhancements).

High-temperature, gas-filled ceramic rectifiers, thyratrons, and voltage-reference tubes

NASA Technical Reports Server (NTRS)

Baum, E. A.

1969-01-01

Thyratron, capable of being operated as a rectifier and a voltage-reference tube, was constructed and tested for 1000 hours at temperatures to 800 degrees C. With current levels at 15 amps and peak voltages of 2000 volts and frequencies at 6000 cps, tube efficiency was greater than 97 percent.

Methods and devices for optimizing the operation of a semiconductor optical modulator

DOEpatents

Zortman, William A.

2015-07-14

A semiconductor-based optical modulator includes a control loop to control and optimize the modulator's operation for relatively high data rates (above 1 GHz) and/or relatively high voltage levels. Both the amplitude of the modulator's driving voltage and the bias of the driving voltage may be adjusted using the control loop. Such adjustments help to optimize the operation of the modulator by reducing the number of errors present in a modulated data stream.

Serial Charging Test on High Capacity Li-Ion Cells for the Orbiter Advanced Hydraulic Power System

NASA Technical Reports Server (NTRS)

Jeevarajan, Judith A.; Irlbeck, Brad

2006-01-01

Although it looks like module level voltage drives the cutoff for charge, the actual cutoff is due to unbalanced cell voltages that drive the module voltage up. Individual cell voltage drives the cutoff for discharge Low resistance cells are the first to reach the low-voltage cutoff Cell-to-Cell voltage differences are generally small and show similar trends for each cycle Increase for a distinct window during charge and at the end of discharge Increase in max to min cell voltage difference with time/cycles Decrease in max to min cell voltage difference during high current pulses with time/cycles Individual cell voltage trends (with respect to other cells) are very repeatable from cycle to cycle, although voltage slowly degrades with time/cycles (resistance growth) Much more difference observed near end of discharge Little change in order of cell voltage (cell with highest voltage to cell with lowest voltage) Temp sensor on the side of cell (between 2 cells) shows much greater rise during discharge than for single cell tests (18 C vs 5 C) Conclusion: Serial Charging of this string of cells is feasible as it has only a minor impact on useful capacity

An earth-isolated optically coupled wideband high voltage probe powered by ambient light.

PubMed

Zhai, Xiang; Bellan, Paul M

2012-10-01

An earth-isolated optically-coupled wideband high voltage probe has been developed for pulsed power applications. The probe uses a capacitive voltage divider coupled to a fast light-emitting diode that converts high voltage into an amplitude-modulated optical signal, which is then conveyed to a receiver via an optical fiber. A solar cell array, powered by ambient laboratory lighting, charges a capacitor that, when triggered, acts as a short-duration power supply for an on-board amplifier in the probe. The entire system has a noise level ≤0.03 kV, a DC-5 MHz bandwidth, and a measurement range from -6 to 2 kV; this range can be conveniently adjusted.

Bivariate quadratic method in quantifying the differential capacitance and energy capacity of supercapacitors under high current operation

NASA Astrophysics Data System (ADS)

Goh, Chin-Teng; Cruden, Andrew

2014-11-01

Capacitance and resistance are the fundamental electrical parameters used to evaluate the electrical characteristics of a supercapacitor, namely the dynamic voltage response, energy capacity, state of charge and health condition. In the British Standards EN62391 and EN62576, the constant capacitance method can be further improved with a differential capacitance that more accurately describes the dynamic voltage response of supercapacitors. This paper presents a novel bivariate quadratic based method to model the dynamic voltage response of supercapacitors under high current charge-discharge cycling, and to enable the derivation of the differential capacitance and energy capacity directly from terminal measurements, i.e. voltage and current, rather than from multiple pulsed-current or excitation signal tests across different bias levels. The estimation results the author achieves are in close agreement with experimental measurements, within a relative error of 0.2%, at various high current levels (25-200 A), more accurate than the constant capacitance method (4-7%). The archival value of this paper is the introduction of an improved quantification method for the electrical characteristics of supercapacitors, and the disclosure of the distinct properties of supercapacitors: the nonlinear capacitance-voltage characteristic, capacitance variation between charging and discharging, and distribution of energy capacity across the operating voltage window.

Ultra-compact Marx-type high-voltage generator

DOEpatents

Goerz, David A.; Wilson, Michael J.

2000-01-01

An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

Human-rated Safety Certification of a High Voltage Robonaut Lithium-ion Battery

NASA Technical Reports Server (NTRS)

Jeevarajan, Judith; Yayathi, S.; Johnson, M.; Waligora, T.; Verdeyen, W.

2013-01-01

NASA's rigorous certification process is being followed for the R2 high voltage battery program for use of R2 on International Space Station (ISS). Rigorous development testing at appropriate levels to credible off-nominal conditions and review of test data led to design improvements for safety at the virtual cell, cartridge and battery levels. Tests were carried out at all levels to confirm that both hardware and software controls work. Stringent flight acceptance testing of the flight battery will be completed before launch for mission use on ISS.

Fiber optic current monitor for high-voltage applications

DOEpatents

Renda, G.F.

1992-04-21

A current monitor which derives its power from the conductor being measured for bidirectionally measuring the magnitude of current (from DC to above 50 khz) flowing through a conductor across which a relatively high level DC voltage is applied, includes a pair of identical transmitter modules connected in opposite polarity to one another in series with the conductor being monitored, for producing from one module a first light signal having an intensity directly proportional to the magnitude of current flowing in one direction through the conductor during one period of time, and from the other module a second light signal having an intensity directly proportional to the magnitude of current flowing in the opposite direction through the conductor during another period of time, and a receiver located in a safe area remote from the high voltage area for receiving the first and second light signals, and converting the same to first and second voltage signals having levels indicative of the magnitude of current being measured at a given time. 6 figs.

Fiber optic current monitor for high-voltage applications

DOEpatents

Renda, George F.

1992-01-01

A current monitor which derives its power from the conductor being measured for bidirectionally measuring the magnitude of current (from DC to above 50 khz) flowing through a conductor across which a relatively high level DC voltage is applied, includes a pair of identical transmitter modules connected in opposite polarity to one another in series with the conductor being monitored, for producing from one module a first light signal having an intensity directly proportional to the magnitude of current flowing in one direction through the conductor during one period of time, and from the other module a second light signal having an intensity directly proportional to the magnitude of current flowing in the opposite direction through the conductor during another period of time, and a receiver located in a safe area remote from the high voltage area for receiving the first and second light signals, and converting the same to first and second voltage signals having levels indicative of the magnitude of current being measured at a given time.

A Compound Algorithm for Maximum Power Point Tracking Used in Laser Power Beaming

NASA Astrophysics Data System (ADS)

Chen, Cheng; Liu, Qiang; Gao, Shan; Teng, Yun; Cheng, Lin; Yu, Chengtao; Peng, Kai

2018-03-01

With the high voltage intelligent substation developing in a pretty high speed, more and more artificial intelligent techniques have been incorporated into the power devices to meet the automation needs. For the sake of the line maintenance staff’s safety, the high voltage isolating switch draws great attention among the most important power devices because of its capability of connecting and disconnecting the high voltage circuit. However, due to the very high level voltage of the high voltage isolating switch’s working environment, the power supply system of the surveillance devices could suffer from great electromagnetic interference. Laser power beaming exhibits its merits in such situation because it can provide steady power from a distance despite the day or the night. Then the energy conversion efficiency arises as a new concern. To make as much use of the laser power as possible, our work mainly focuses on extracting maximum power from the photovoltaic (PV) panel. In this paper, we proposed a neural network based algorithm which relates both the intrinsic and the extrinsic features of the PV panel to the proportion of the voltage at the maximum power point (MPP) to the open circuit voltage of the PV panel. Simulations and experiments were carried out to verify the validness of our algorithm.

Spectral shape deformation in inverse spin Hall voltage in Y{sub 3}Fe{sub 5}O{sub 12}|Pt bilayers at high microwave power levels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lustikova, J., E-mail: lustikova@imr.tohoku.ac.jp; Shiomi, Y.; Handa, Y.

2015-02-21

We report on the deformation of microwave absorption spectra and of the inverse spin Hall voltage signals in thin film bilayers of yttrium iron garnet (YIG) and platinum at high microwave power levels in a 9.45-GHz TE{sub 011} cavity. As the microwave power increases from 0.15 to 200 mW, the resonance field shifts to higher values, and the initially Lorentzian spectra of the microwave absorption intensity as well as the inverse spin Hall voltage signals become asymmetric. The contributions from opening of the magnetization precession cone and heating of YIG cannot well reproduce the data. Control measurements of inverse spinmore » Hall voltages on thin-film YIG|Pt systems with a range of line widths underscore the role of spin-wave excitations in spectral deformation.« less

An Enhanced Three-Level Voltage Switching State Scheme for Direct Torque Controlled Open End Winding Induction Motor

NASA Astrophysics Data System (ADS)

Kunisetti, V. Praveen Kumar; Thippiripati, Vinay Kumar

2018-01-01

Open End Winding Induction Motors (OEWIM) are popular for electric vehicles, ship propulsion applications due to less DC link voltage. Electric vehicles, ship propulsions require ripple free torque. In this article, an enhanced three-level voltage switching state scheme for direct torque controlled OEWIM drive is implemented to reduce torque and flux ripples. The limitations of conventional Direct Torque Control (DTC) are: possible problems during low speeds and starting, it operates with variable switching frequency due to hysteresis controllers and produces higher torque and flux ripple. The proposed DTC scheme can abate the problems of conventional DTC with an enhanced voltage switching state scheme. The three-level inversion was obtained by operating inverters with equal DC-link voltages and it produces 18 voltage space vectors. These 18 vectors are divided into low and high frequencies of operation based on rotor speed. The hardware results prove the validity of proposed DTC scheme during steady-state and transients. From simulation and experimental results, proposed DTC scheme gives less torque and flux ripples on comparison to two-level DTC. The proposed DTC is implemented using dSPACE DS-1104 control board interface with MATLAB/SIMULINK-RTI model.

An Enhanced Three-Level Voltage Switching State Scheme for Direct Torque Controlled Open End Winding Induction Motor

NASA Astrophysics Data System (ADS)

Kunisetti, V. Praveen Kumar; Thippiripati, Vinay Kumar

2018-06-01

Open End Winding Induction Motors (OEWIM) are popular for electric vehicles, ship propulsion applications due to less DC link voltage. Electric vehicles, ship propulsions require ripple free torque. In this article, an enhanced three-level voltage switching state scheme for direct torque controlled OEWIM drive is implemented to reduce torque and flux ripples. The limitations of conventional Direct Torque Control (DTC) are: possible problems during low speeds and starting, it operates with variable switching frequency due to hysteresis controllers and produces higher torque and flux ripple. The proposed DTC scheme can abate the problems of conventional DTC with an enhanced voltage switching state scheme. The three-level inversion was obtained by operating inverters with equal DC-link voltages and it produces 18 voltage space vectors. These 18 vectors are divided into low and high frequencies of operation based on rotor speed. The hardware results prove the validity of proposed DTC scheme during steady-state and transients. From simulation and experimental results, proposed DTC scheme gives less torque and flux ripples on comparison to two-level DTC. The proposed DTC is implemented using dSPACE DS-1104 control board interface with MATLAB/SIMULINK-RTI model.

Design and Implementation of 13 Levels Multilevel Inverter for Photovoltaic System

NASA Astrophysics Data System (ADS)

Subramani, C.; Dhineshkumar, K.; Palanivel, P.

2018-04-01

This paper approaches the appearing and modernization of S-Type PV based 13- level multilevel inverter with less quantity of switch. The current S-Type Multi level inverter contains more number of switches and voltage sources. Multilevel level inverter is a be understandable among the most gainful power converters for high power application and present day applications with reduced switches. The fundamental good arrangement of the 13-level multilevel inverter is to get ventured voltage from a couple of levels of DC voltages.. The controller gives actual way day and age to switches through driver circuit using PWM methodology. The execution assessment of proposed multilevel inverter is checked using MATLAB/Simulink. This is the outstanding among other techniquem appeared differently in relation to all other existing system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jones, J E; Smith, J T; Mathis, M V

Based on the limited measurements and the attempts to activate the high voltage power supply, the Source Range Monitor which includes NI-AMP-2 is not operating. Since there appears to be an excessive load on the high voltage, it appears that either the detector or cable is defective. However, TDR measurements did not indicate a significant problem with the cable using low level test signals.

59. View of high voltage (4160 volts alternating current) electric ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

59. View of high voltage (4160 volts alternating current) electric load center and motor control center at mezzanine level in transmitter building no. 102. - Clear Air Force Station, Ballistic Missile Early Warning System Site II, One mile west of mile marker 293.5 on Parks Highway, 5 miles southwest of Anderson, Anderson, Denali Borough, AK

Battery Cell By-Pass Circuit

NASA Technical Reports Server (NTRS)

Mumaw, Susan J. (Inventor); Evers, Jeffrey (Inventor); Craig, Calvin L., Jr. (Inventor); Walker, Stuart D. (Inventor)

2001-01-01

The invention is a circuit and method of limiting the charging current voltage from a power supply net work applied to an individual cell of a plurality of cells making up a battery being charged in series. It is particularly designed for use with batteries that can be damaged by overcharging, such as Lithium-ion type batteries. In detail. the method includes the following steps: 1) sensing the actual voltage level of the individual cell; 2) comparing the actual voltage level of the individual cell with a reference value and providing an error signal representative thereof; and 3) by-passing the charging current around individual cell necessary to keep the individual cell voltage level generally equal a specific voltage level while continuing to charge the remaining cells. Preferably this is accomplished by by-passing the charging current around the individual cell if said actual voltage level is above the specific voltage level and allowing the charging current to the individual cell if the actual voltage level is equal or less than the specific voltage level. In the step of bypassing the charging current, the by-passed current is transferred at a proper voltage level to the power supply. The by-pass circuit a voltage comparison circuit is used to compare the actual voltage level of the individual cell with a reference value and to provide an error signal representative thereof. A third circuit, designed to be responsive to the error signal, is provided for maintaining the individual cell voltage level generally equal to the specific voltage level. Circuitry is provided in the third circuit for bypassing charging current around the individual cell if the actual voltage level is above the specific voltage level and transfers the excess charging current to the power supply net work. The circuitry also allows charging of the individual cell if the actual voltage level is equal or less than the specific voltage level.

Load insensitive electrical device. [power converters for supplying direct current at one voltage from a source at another voltage

NASA Technical Reports Server (NTRS)

Schwarz, F. C. (Inventor)

1974-01-01

A class of power converters is described for supplying direct current at one voltage from a source at another voltage. It includes a simple passive circuit arrangement of solid-state switches, inductors, and capacitors by which the output voltage of the converter tends to remain constant in spite of changes in load. The switches are sensitive to the current flowing in the circuit and are employed to permit the charging of capacitance devices in accordance with the load requirements. Because solid-state switches (such as SCR's) may be used with relatively high voltage and because of the inherent efficiency of the invention that permits relatively high switching frequencies, power supplies built in accordance with the invention, together with their associated cabling, can be substantially lighter in weight for a given output power level and efficiency of operation than systems of the prior art.

Development of High Level Electrical Stress Failure Threshold and Prediction Model for Small Scale Junction Integrated Circuits

DTIC Science & Technology

1978-09-01

AWACS EMP Guidelines presents two different models to predict the damage pcwer of the dev-ce and the circuit damage EMP voltage ( VEMP ). Neither of...calculated as K P~ I V BD 6. The damage EMP voltage ( VEMP ) is calculated KZ EMP +IZ =D +BD VBD1F 7. The damage EMP voltage is calculated for collector

A high resolution on-chip delay sensor with low supply-voltage sensitivity for high-performance electronic systems.

PubMed

Sheng, Duo; Lai, Hsiu-Fan; Chan, Sheng-Min; Hong, Min-Rong

2015-02-13

An all-digital on-chip delay sensor (OCDS) circuit with high delay-measurement resolution and low supply-voltage sensitivity for efficient detection and diagnosis in high-performance electronic system applications is presented. Based on the proposed delay measurement scheme, the quantization resolution of the proposed OCDS can be reduced to several picoseconds. Additionally, the proposed cascade-stage delay measurement circuit can enhance immunity to supply-voltage variations of the delay measurement resolution without extra self-biasing or calibration circuits. Simulation results show that the delay measurement resolution can be improved to 1.2 ps; the average delay resolution variation is 0.55% with supply-voltage variations of ±10%. Moreover, the proposed delay sensor can be implemented in an all-digital manner, making it very suitable for high-performance electronic system applications as well as system-level integration.

High voltage pulse ignition of mercury discharge hollow cathodes

NASA Technical Reports Server (NTRS)

Wintucky, E. G.

1973-01-01

A high voltage pulse generated by a capacitor discharge into a step-up transformer has been demonstrated capable of consistently igniting hollow cathode mercury discharges at propellant flows and heater power levels much below those required by conventional cathode starting. Results are presented for 3.2-mm diameter enclosed and open keeper cathodes. Starting characteristics are shown to depend on keeper voltage, mercury flow rate, heater power, keeper orifice size, emissive materials, and electrode to which the pulse is applied. This starting technique has been used to start a cathode over 10,000 times without any degradation of starting capability. The starting reliability, propellant and power savings offered by the high voltage pulse start should favorably impact performance of electron bombardment thrusters in missions requiring many on-off duty cycles.

Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism.

PubMed

Chakrabarti, Somsubhra; Ginnaram, Sreekanth; Jana, Surajit; Wu, Zong-Yi; Singh, Kanishk; Roy, Anisha; Kumar, Pankaj; Maikap, Siddheswar; Qiu, Jian-Tai; Cheng, Hsin-Ming; Tsai, Ling-Na; Chang, Ya-Ling; Mahapatra, Rajat; Yang, Jer-Ren

2017-07-05

Negative voltage modulated multi-level resistive switching with quantum conductance during staircase-type RESET and its transport characteristics in Cr/BaTiO x /TiN structure have been investigated for the first time. The as-deposited amorphous BaTiO x film has been confirmed by high-resolution transmission electron microscopy. X-ray photo-electron spectroscopy shows different oxidation states of Ba in the switching material, which is responsible for tunable more than 10 resistance states by varying negative stop voltage owing to slow decay value of RESET slope (217.39 mV/decade). Quantum conductance phenomenon has been observed in staircase RESET cycle of the memory devices. By inspecting the oxidation states of Ba + and Ba 2+ through measuring H 2 O 2 with a low concentration of 1 nM in electrolyte/BaTiO x /SiO 2 /p-Si structure, the switching mechanism of each HRS level as well as the multi-level phenomenon has been explained by gradual dissolution of oxygen vacancy filament. Along with negative stop voltage modulated multi-level, current compliance dependent multi-level has also been demonstrated and resistance ratio up to 2000 has been achieved even for a thin (<5 nm) switching material. By considering oxidation-reduction of the conducting filaments, the current-voltage switching curve has been simulated as well. Hence, multi-level resistive switching of Cr/BaTiO x /TiN structure implies the promising applications in high dense, multistate non-volatile memories in near future.

High Cycle Life Cathode for High Voltage (5V) Lithium Ion Batteries

DTIC Science & Technology

2010-12-16

lithium cobalt phosphate (LiCoPO4) that provides higher energy density (15% > LiFePO4 demonstrated, up to 40% greater with further R&D). •The invention...standard LiFePO4 • Higher voltage at cell level may reduce number of cells required for application • Easy and inexpensive method to prepare • Offers safety

High sensitivity field asymmetric ion mobility spectrometer

NASA Astrophysics Data System (ADS)

Chavarria, Mario A.; Matheoud, Alessandro V.; Marmillod, Philippe; Liu, Youjiang; Kong, Deyi; Brugger, Jürgen; Boero, Giovanni

2017-03-01

A high sensitivity field asymmetric ion mobility spectrometer (FAIMS) was designed, fabricated, and tested. The main components of the system are a 10.6 eV UV photoionization source, an ion filter driven by a high voltage/high frequency n-MOS inverter circuit, and a low noise ion detector. The ion filter electronics are capable to generate square waveforms with peak-to-peak voltages up to 1000 V at frequencies up to 1 MHz with adjustable duty cycles. The ion detector current amplifier has a gain up to 1012 V/A with an effective equivalent input noise level down to about 1 fA/Hz1/2 during operation with the ion filter at the maximum voltage and frequency. The FAIMS system was characterized by detecting different standard chemical compounds. Additionally, we investigated the use of a synchronous modulation/demodulation technique to improve the signal-to-noise ratio in FAIMS measurements. In particular, we implemented the modulation of the compensation voltage with the synchronous demodulation of the ion current. The analysis of the measurements at low concentration levels led to an extrapolated limit of detection for acetone of 10 ppt with an averaging time of 1 s.

Low Voltage Electrowetting-on-Dielectric Platform using Multi-Layer Insulators

PubMed Central

Lin, Yan-You; Evans, Randall D.; Welch, Erin; Hsu, Bang-Ning; Madison, Andrew C.; Fair, Richard B.

2010-01-01

A low voltage, two-level-metal, and multi-layer insulator electrowetting-on-dielectric (EWD) platform is presented. Dispensing 300pl droplets from 140nl closed on-chip reservoirs was accomplished with as little as 11.4V solely through EWD forces, and the actuation threshold voltage was 7.2V with a 1Hz voltage switching rate between electrodes. EWD devices were fabricated with a multilayer insulator consisting of 135nm sputtered tantalum pentoxide (Ta2O5) and 180nm parylene C coated with 70nm of CYTOP. Furthermore, the minimum actuation threshold voltage followed a previously published scaling model for the threshold voltage, VT, which is proportional to (t/εr)1/2, where t and εr are the insulator thickness and dielectric constant respectively. Device threshold voltages are compared for several insulator thicknesses (200nm, 500nm, and 1µm), different dielectric materials (parylene C and tantalum pentoxide), and homogeneous versus heterogeneous compositions. Additionally, we used a two-level-metal fabrication process, which enables the fabrication of smaller and denser electrodes with high interconnect routing flexibility. We also have achieved low dispensing and actuation voltages for scaled devices with 30pl droplets. PMID:20953362

RESONANT CAVITY EXCITATION SYSTEM

DOEpatents

Baker, W.R.; Kerns, Q.A.; Riedel, J.

1959-01-13

An apparatus is presented for exciting a cavity resonator with a minimum of difficulty and, more specifically describes a sub-exciter and an amplifier type pre-exciter for the high-frequency cxcitation of large cavities. Instead of applying full voltage to the main oscillator, a sub-excitation voltage is initially used to establish a base level of oscillation in the cavity. A portion of the cavity encrgy is coupled to the input of the pre-exciter where it is amplified and fed back into the cavity when the pre-exciter is energized. After the voltage in the cavity resonator has reached maximum value under excitation by the pre-exciter, full voltage is applied to the oscillator and the pre-exciter is tunned off. The cavity is then excited to the maximum high voltage value of radio frequency by the oscillator.

Single-Cell Electric Lysis on an Electroosmotic-Driven Microfluidic Chip with Arrays of Microwells

PubMed Central

Jen, Chun-Ping; Amstislavskaya, Tamara G.; Liu, Ya-Hui; Hsiao, Ju-Hsiu; Chen, Yu-Hung

2012-01-01

Accurate analysis at the single-cell level has become a highly attractive tool for investigating cellular content. An electroosmotic-driven microfluidic chip with arrays of 30-μm-diameter microwells was developed for single-cell electric lysis in the present study. The cellular occupancy in the microwells when the applied voltage was 5 V (82.4%) was slightly higher than that at an applied voltage of 10 V (81.8%). When the applied voltage was increased to 15 V, the cellular occupancy in the microwells dropped to 64.3%. More than 50% of the occupied microwells contain individual cells. The results of electric lysis experiments at the single-cell level indicate that the cells were gradually lysed as the DC voltage of 30 V was applied; the cell was fully lysed after 25 s. Single-cell electric lysis was demonstrated in the proposed microfluidic chip, which is suitable for high-throughput cell lysis. PMID:22969331

2.3-MW Medium-Voltage, Three-Level Wind Energy Inverter Applying a Unique Bus Structure and 4.5-kV Si/SiC Hybrid Isolated Power Modules: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erdman, W.; Keller, J.; Grider, D.

A high-efficiency, 2.3-MW, medium-voltage, three-level inverter utilizing 4.5-kV Si/SiC (silicon carbide) hybrid modules for wind energy applications is discussed. The inverter addresses recent trends in siting the inverter within the base of multimegawatt turbine towers. A simplified split, three-layer laminated bus structure that maintains low parasitic inductances is introduced along with a low-voltage, high-current test method for determining these inductances. Feed-thru bushings, edge fill methods, and other design features of the laminated bus structure provide voltage isolation that is consistent with the 10.4-kV module isolation levels. Inverter efficiency improvement is a result of the (essential) elimination of the reverse recoverymore » charge present in 4.5-kV Si PIN diodes, which can produce a significant reduction in diode turn-off losses as well as insulated-gate bipolar transistor (IGBT) turn-on losses. The hybrid modules are supplied in industry-standard 140 mm x 130 mm and 190 mm x 130 mm packages to demonstrate direct module substitution into existing inverter designs. A focus on laminated bus/capacitor-bank/module subassembly level switching performance is presented.« less

High voltage pulse generator. [Patent application

DOEpatents

Fasching, G.E.

1975-06-12

An improved high-voltage pulse generator is described which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of the first rectifier connected between the first and second capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. The output voltage can be readily increased by adding additional charging networks. The circuit allows the peak level of the output to be easily varied over a wide range by using a variable autotransformer in the charging circuit.

Calibration of high voltages at the ppm level by the difference of ^{83{m}}Kr conversion electron lines at the KATRIN experiment

NASA Astrophysics Data System (ADS)

Arenz, M.; Baek, W.-J.; Beck, M.; Beglarian, A.; Behrens, J.; Bergmann, T.; Berlev, A.; Besserer, U.; Blaum, K.; Bode, T.; Bornschein, B.; Bornschein, L.; Brunst, T.; Buzinsky, N.; Chilingaryan, S.; Choi, W. Q.; Deffert, M.; Doe, P. J.; Dragoun, O.; Drexlin, G.; Dyba, S.; Edzards, F.; Eitel, K.; Ellinger, E.; Engel, R.; Enomoto, S.; Erhard, M.; Eversheim, D.; Fedkevych, M.; Fischer, S.; Formaggio, J. A.; Fränkle, F. M.; Franklin, G. B.; Friedel, F.; Fulst, A.; Gil, W.; Glück, F.; Ureña, A. Gonzalez; Grohmann, S.; Grössle, R.; Gumbsheimer, R.; Hackenjos, M.; Hannen, V.; Harms, F.; Haußmann, N.; Heizmann, F.; Helbing, K.; Herz, W.; Hickford, S.; Hilk, D.; Hillesheimer, D.; Howe, M. A.; Huber, A.; Jansen, A.; Kellerer, J.; Kernert, N.; Kippenbrock, L.; Kleesiek, M.; Klein, M.; Kopmann, A.; Korzeczek, M.; Kovalík, A.; Krasch, B.; Kraus, M.; Kuckert, L.; Lasserre, T.; Lebeda, O.; Letnev, J.; Lokhov, A.; Machatschek, M.; Marsteller, A.; Martin, E. L.; Mertens, S.; Mirz, S.; Monreal, B.; Neumann, H.; Niemes, S.; Off, A.; Osipowicz, A.; Otten, E.; Parno, D. S.; Pollithy, A.; Poon, A. W. P.; Priester, F.; Ranitzsch, P. C.-O.; Rest, O.; Robertson, R. G. H.; Roccati, F.; Rodenbeck, C.; Röllig, M.; Röttele, C.; Ryšavý, M.; Sack, R.; Saenz, A.; Schimpf, L.; Schlösser, K.; Schlösser, M.; Schönung, K.; Schrank, M.; Seitz-Moskaliuk, H.; Sentkerestiová, J.; Sibille, V.; Slezák, M.; Steidl, M.; Steinbrink, N.; Sturm, M.; Suchopar, M.; Suesser, M.; Telle, H. H.; Thorne, L. A.; Thümmler, T.; Titov, N.; Tkachev, I.; Trost, N.; Valerius, K.; Vénos, D.; Vianden, R.; Hernández, A. P. Vizcaya; Weber, M.; Weinheimer, C.; Weiss, C.; Welte, S.; Wendel, J.; Wilkerson, J. F.; Wolf, J.; Wüstling, S.; Zadoroghny, S.

2018-05-01

The neutrino mass experiment KATRIN requires a stability of 3 ppm for the retarding potential at - 18.6 kV of the main spectrometer. To monitor the stability, two custom-made ultra-precise high-voltage dividers were developed and built in cooperation with the German national metrology institute Physikalisch-Technische Bundesanstalt (PTB). Until now, regular absolute calibration of the voltage dividers required bringing the equipment to the specialised metrology laboratory. Here we present a new method based on measuring the energy difference of two ^{83{m}}Kr conversion electron lines with the KATRIN setup, which was demonstrated during KATRIN's commissioning measurements in July 2017. The measured scale factor M=1972.449(10) of the high-voltage divider K35 is in agreement with the last PTB calibration 4 years ago. This result demonstrates the utility of the calibration method, as well as the long-term stability of the voltage divider.

Feeding a sub-ns-risetime rectangular pulse onto a rod-shaped resistive high-voltage divider in risetime <2 ns

NASA Astrophysics Data System (ADS)

Zeng, Zhengzhong; Ma, Lianying

2004-01-01

A simple and effective bridge-type feeding network consisting only of ordinary resistors and conductive wires is designed and tested which launches a 0.8 ns risetime, 40 ns width, and kV-level rectangular pulse from a coaxial cable onto a rod-shaped resistive high-voltage divider with risetime <2 ns with no significant distortion.

Modeling and Simulation of Linear and Nonlinear MEMS Scale Electromagnetic Energy Harvesters for Random Vibration Environments

PubMed Central

Sassani, Farrokh

2014-01-01

The simulation results for electromagnetic energy harvesters (EMEHs) under broad band stationary Gaussian random excitations indicate the importance of both a high transformation factor and a high mechanical quality factor to achieve favourable mean power, mean square load voltage, and output spectral density. The optimum load is different for random vibrations and for sinusoidal vibration. Reducing the total damping ratio under band-limited random excitation yields a higher mean square load voltage. Reduced bandwidth resulting from decreased mechanical damping can be compensated by increasing the electrical damping (transformation factor) leading to a higher mean square load voltage and power. Nonlinear EMEHs with a Duffing spring and with linear plus cubic damping are modeled using the method of statistical linearization. These nonlinear EMEHs exhibit approximately linear behaviour under low levels of broadband stationary Gaussian random vibration; however, at higher levels of such excitation the central (resonant) frequency of the spectral density of the output voltage shifts due to the increased nonlinear stiffness and the bandwidth broadens slightly. Nonlinear EMEHs exhibit lower maximum output voltage and central frequency of the spectral density with nonlinear damping compared to linear damping. Stronger nonlinear damping yields broader bandwidths at stable resonant frequency. PMID:24605063

High voltage pulse ignition of mercury discharge hollow cathodes

NASA Technical Reports Server (NTRS)

Wintucky, E. G.

1973-01-01

A high voltage pulse generated by a capacitor discharge into a step-up transformer has been demonstrated capable of consistently igniting hollow cathode mercury discharges at propellant flows and heater power levels much below those required by conventional cathode starting. Results are presented for 3.2-mm diameter enclosed and open keeper cathodes. Starting characteristics are shown to depend on keeper voltage, mercury flow rate, heater power, keeper orifice size, emissive materials, and electrode to which the pulse is applied. This starting technique has been used to start a cathode over 10,000 times without any degradation of starting capability.

Elevated voltage level I.sub.DDQ failure testing of integrated circuits

DOEpatents

Righter, Alan W.

1996-01-01

Burn in testing of static CMOS IC's is eliminated by I.sub.DDQ testing at elevated voltage levels. These voltage levels are at least 25% higher than the normal operating voltage for the IC but are below voltage levels that would cause damage to the chip.

Status of high polarization DC high voltage Gallium Arsenide photoelectron guns

DOE Office of Scientific and Technical Information (OSTI.GOV)

M. Poelker, P. Adderley, J. Brittian, J. Clark, J. Grames, J. Hansknecht, J. McCarter, M. Stutzman, R. Suleiman, K. Surles-Law

2008-01-01

Users receive very high beam polarization from reliable GaAs photoelectron guns at facilities worldwide. Satisfaction with beam quality (and a number of lab closures) has reduced the level of polarized source R&D from the heyday of 1990s. However, new experiments and new accelerators proposals including high current unpolarized machines, require GaAs photoguns with capabilities that exceed today's state of the art. This submission describes the capabilities of today's high- polarization DC high voltage GaAs photoguns and discusses issues that must be addressed to meet new demands.

Reconfigurable, Bi-Directional Flexfet Level Shifter for Low-Power, Rad-Hard Integration

NASA Technical Reports Server (NTRS)

DeGregorio, Kelly; Wilson, Dale G.

2009-01-01

Two prototype Reconfigurable, Bi-directional Flexfet Level Shifters (ReBiLS) have been developed, where one version is a stand-alone component designed to interface between external low voltage and high voltage, and the other version is an embedded integrated circuit (IC) for interface between internal low-voltage logic and external high-voltage components. Targeting stand-alone and embedded circuits separately allows optimization for these distinct applications. Both ReBiLS designs use the commercially available 180-nm Flex fet Independently Double-Gated (IDG) SOI CMOS (silicon on insulator, complementary metal oxide semiconductor) technology. Embedded ReBiLS circuits were integrated with a Reed-Solomon (RS) encoder using CMOS Ultra-Low-Power Radiation Tolerant (CULPRiT) double-gated digital logic circuits. The scope of the project includes: creation of a new high-voltage process, development of ReBiLS circuit designs, and adjustment of the designs to maximize performance through simulation, layout, and manufacture of prototypes. The primary technical objectives were to develop a high-voltage, thick oxide option for the 180-nm Flexfet process, and to develop a stand-alone ReBiLS IC with two 8-channel I/O busses, 1.8 2.5 I/O on the low-voltage pins, 5.0-V-tolerant input and 3.3-V output I/O on the high-voltage pins, and 100-MHz minimum operation with 10-pF external loads. Another objective was to develop an embedded, rad-hard ReBiLS I/O cell with 0.5-V low-voltage operation for interface with core logic, 5.0-V-tolerant input and 3.3-V output I/O pins, and 100-MHz minimum operation with 10- pF external loads. A third objective was to develop a 0.5- V Reed-Solomon Encoder with embedded ReBilS I/O: Transfer the existing CULPRiT RS encoder from a 0.35-micron bulk-CMOS process to the ASI 180-nm Flexfet, rad-hard SOI Process. 0.5-V low-voltage core logic. 5.0-V-tolerant input and 3.3-V output I/O pins. 100-MHz minimum operation with 10- pF external loads. The stand-alone ReBiLS chip will allow system designers to provide efficient bi-directional communication between components operating at different voltages. Embedding the ReBiLS cells into the proven Reed-Solomon encoder will demonstrate the ability to support new product development in a commercially viable, rad-hard, scalable 180-nm SOI CMOS process.

Characterization of Transducers and Resonators under High Drive Levels

NASA Technical Reports Server (NTRS)

Sherrit, Stewart; Bao, X.; Sigel, D. A.; Gradziel, M. J.; Askins, S. A.; Dolgin, B. P.; Bar-Cohen, Y.

2001-01-01

In many applications, piezoelectric transducers are driven at AC voltage levels well beyond the level for which the material was nominally characterized. In this paper we describe an experimental setup that allows for the determination of the main transducer or resonator properties under large AC drive. A sinusoidal voltage from a waveform generator is amplified and applied across the transducer/resonator in series with a known high power resistor. The amplitude of applied voltage and the amplitude and the relative phase of the current through the resistor are monitored on a digital scope. The frequency of the applied signal is swept through resonance and the voltage/current signals are recorded. After corrections for the series resistance and parasitic elements the technique allows for the determination of the complex impedance spectra of the sample as a function of frequency. In addition, access to the current signal allows for the direct investigation of non-linear effects through the application of Fourier transform techniques on the current signal. Our results indicate that care is required when interpreting impedance data at high drive level due to the frequency dependence of the dissipated power. Although the transducer/resonator at a single frequency and after many cycles may reach thermal equilibrium, the spectra as a whole cannot be considered an isothermal measurement due to the temperature change with frequency. Methods to correct for this effect will be discussed. Results determined from resonators of both soft and hard PZT and a ultrasonic horn transducer are presented.

Two new families of high-gain dc-dc power electronic converters for dc-microgrids

NASA Astrophysics Data System (ADS)

Prabhala, Venkata Anand Kishore

Distributing the electric power in dc form is an appealing solution in many applications such as telecommunications, data centers, commercial buildings, and microgrids. A high gain dc-dc power electronic converter can be used to individually link low-voltage elements such as solar panels, fuel cells, and batteries to the dc voltage bus which is usually 400 volts. This way, it is not required to put such elements in a series string to build up their voltages. Consequently, each element can function at it optimal operating point regardless of the other elements in the system. In this dissertation, first a comparative study of dc microgrid architectures and their advantages over their ac counterparts is presented. Voltage level selection of dc distribution systems is discussed from the cost, reliability, efficiency, and safety standpoints. Next, a new family of non-isolated high-voltage-gain dc-dc power electronic converters with unidirectional power flow is introduced. This family of converters benefits from a low voltage stress across its switches. The proposed topologies are versatile as they can be utilized as single-input or double-input power converters. In either case, they draw continuous currents from their sources. Lastly, a bidirectional high-voltage-gain dc-dc power electronic converter is proposed. This converter is comprised of a bidirectional boost converter which feeds a switched-capacitor architecture. The switched-capacitor stage suggested here has several advantages over the existing approaches. For example, it benefits from a higher voltage gain while it uses less number of capacitors. The proposed converters are highly efficient and modular. The operating modes, dc voltage gain, and design procedure for each converter are discussed in details. Hardware prototypes have been developed in the lab. The results obtained from the hardware agree with those of the simulation models.

Sliding-mode control of single input multiple output DC-DC converter

NASA Astrophysics Data System (ADS)

Zhang, Libo; Sun, Yihan; Luo, Tiejian; Wan, Qiyang

2016-10-01

Various voltage levels are required in the vehicle mounted power system. A conventional solution is to utilize an independent multiple output DC-DC converter whose cost is high and control scheme is complicated. In this paper, we design a novel SIMO DC-DC converter with sliding mode controller. The proposed converter can boost the voltage of a low-voltage input power source to a controllable high-voltage DC bus and middle-voltage output terminals, which endow the converter with characteristics of simple structure, low cost, and convenient control. In addition, the sliding mode control (SMC) technique applied in our converter can enhance the performances of a certain SIMO DC-DC converter topology. The high-voltage DC bus can be regarded as the main power source to the high-voltage facility of the vehicle mounted power system, and the middle-voltage output terminals can supply power to the low-voltage equipment on an automobile. In the respect of control algorithm, it is the first time to propose the SMC-PID (Proportion Integration Differentiation) control algorithm, in which the SMC algorithm is utilized and the PID control is attended to the conventional SMC algorithm. The PID control increases the dynamic ability of the SMC algorithm by establishing the corresponding SMC surface and introducing the attached integral of voltage error, which endow the sliding-control system with excellent dynamic performance. At last, we established the MATLAB/SIMULINK simulation model, tested performance of the system, and built the hardware prototype based on Digital Signal Processor (DSP). Results show that the sliding mode control is able to track a required trajectory, which has robustness against the uncertainties and disturbances.

Sliding-mode control of single input multiple output DC-DC converter.

PubMed

Zhang, Libo; Sun, Yihan; Luo, Tiejian; Wan, Qiyang

2016-10-01

Various voltage levels are required in the vehicle mounted power system. A conventional solution is to utilize an independent multiple output DC-DC converter whose cost is high and control scheme is complicated. In this paper, we design a novel SIMO DC-DC converter with sliding mode controller. The proposed converter can boost the voltage of a low-voltage input power source to a controllable high-voltage DC bus and middle-voltage output terminals, which endow the converter with characteristics of simple structure, low cost, and convenient control. In addition, the sliding mode control (SMC) technique applied in our converter can enhance the performances of a certain SIMO DC-DC converter topology. The high-voltage DC bus can be regarded as the main power source to the high-voltage facility of the vehicle mounted power system, and the middle-voltage output terminals can supply power to the low-voltage equipment on an automobile. In the respect of control algorithm, it is the first time to propose the SMC-PID (Proportion Integration Differentiation) control algorithm, in which the SMC algorithm is utilized and the PID control is attended to the conventional SMC algorithm. The PID control increases the dynamic ability of the SMC algorithm by establishing the corresponding SMC surface and introducing the attached integral of voltage error, which endow the sliding-control system with excellent dynamic performance. At last, we established the MATLAB/SIMULINK simulation model, tested performance of the system, and built the hardware prototype based on Digital Signal Processor (DSP). Results show that the sliding mode control is able to track a required trajectory, which has robustness against the uncertainties and disturbances.

Electric Discharge Sintering and Joining of Tungsten Carbide—Cobalt Composite with High-Speed Steel Substrate

NASA Astrophysics Data System (ADS)

Grigoryev, Evgeny G.

2011-01-01

Simultaneous electro discharge sintering of high strength structure of tungsten carbide—cobalt composite and connection it with high-speed steel substrate is investigated and suitable operating parameters are defined. Tungsten carbide—cobalt and high-speed steel joining was produced by the method of high voltage electrical discharge together with application of mechanical pressure to powder compact. It was found that the density and hardness of composite material reach its maximum values at certain magnitudes of applied pressure and high voltage electrical discharge parameters. We show that there is an upper level for the discharge voltage beyond which the powder of composite material disintegrates like an exploding wire. Due to our results it is possible to determine optimal parameters for simultaneous electro discharge sintering of WC-Co and bonding it with high-speed steel substrate.

High-voltage electrode optimization towards uniform surface treatment by a pulsed volume discharge

NASA Astrophysics Data System (ADS)

Ponomarev, A. V.; Pedos, M. S.; Scherbinin, S. V.; Mamontov, Y. I.; Ponomarev, S. V.

2015-11-01

In this study, the shape and material of the high-voltage electrode of an atmospheric pressure plasma generation system were optimised. The research was performed with the goal of achieving maximum uniformity of plasma treatment of the surface of the low-voltage electrode with a diameter of 100 mm. In order to generate low-temperature plasma with the volume of roughly 1 cubic decimetre, a pulsed volume discharge was used initiated with a corona discharge. The uniformity of the plasma in the region of the low-voltage electrode was assessed using a system for measuring the distribution of discharge current density. The system's low-voltage electrode - collector - was a disc of 100 mm in diameter, the conducting surface of which was divided into 64 radially located segments of equal surface area. The current at each segment was registered by a high-speed measuring system controlled by an ARM™-based 32-bit microcontroller. To facilitate the interpretation of results obtained, a computer program was developed to visualise the results. The program provides a 3D image of the current density distribution on the surface of the low-voltage electrode. Based on the results obtained an optimum shape for a high-voltage electrode was determined. Uniformity of the distribution of discharge current density in relation to distance between electrodes was studied. It was proven that the level of non-uniformity of current density distribution depends on the size of the gap between electrodes. Experiments indicated that it is advantageous to use graphite felt VGN-6 (Russian abbreviation) as the material of the high-voltage electrode's emitting surface.

Elevated voltage level I{sub DDQ} failure testing of integrated circuits

DOEpatents

Righter, A.W.

1996-05-21

Burn in testing of static CMOS IC`s is eliminated by I{sub DDQ} testing at elevated voltage levels. These voltage levels are at least 25% higher than the normal operating voltage for the IC but are below voltage levels that would cause damage to the chip. 4 figs.

Breakdown Characteristic Analysis of Paper- Oil Insulation under AC and DC Voltage

NASA Astrophysics Data System (ADS)

Anuar, N. F.; Jamail, N. A. M.; Rahman, R. A.; Kamarudin, M. S.

2017-08-01

This paper presents the study of breakdown characteristic of Kraft paper insulated with two different types of insulating fluid, which are Palm oil and Coconut oil. Palm oil and Coconut oil are chosen as the alternative fluid to the transformer oil because it has high potential and environmentally-friendly. The Segezha Kraft papers with various thicknesses (65.5 gsm, 75 gsm, 85gsm, 90 gsm) have been used in this research. High Voltage Direct Current (HVDC), High Voltage Alternating Current (HVAC) and carbon track and severity analysis is conducted to observe the sample of aging Kraft paper. These samples have been immersed using Palm oil and Coconut oil up to 90 days to observe the absorption rate. All samples started to reach saturation level at 70 days of immersion. HVDC and HVAC breakdown experiments have been done after the samples had reached the saturation level based on normal condition, immersed in Palm oil and immersed in Coconut oil. All samples immersed in liquid show different breakdown voltage reading compared to normal condition. The analysis of carbon track and severity on surface has been done using Analytical Scanning Electron Microscope (SEM) Analysis. The results of the experiment show that the sample of Kraft paper immersed in Palm oil was better than Coconut oil immersed sample. Therefore the sample condition was the main factor that determines the value of breakdown voltage test. Introduction

Performance Characterization of a Novel Plasma Thruster to Provide a Revolutionary Operationally Responsive Space Capability with Micro- and Nano-Satellites

DTIC Science & Technology

2011-03-24

and radiation resistance of rare earth permanent magnets for applications such as ion thrusters and high efficiency Stirling Radioisotope Generators...from Electron Transitioning Discharge Current Discharge Power Discharge Voltage Θ Divergence Angle Earths Gravity at Sea Level...Hall effect thruster HIVAC High Voltage Hall Accelerator LEO Low Earth Orbit LDS Laser Displacement System LVDT Linear variable differential

Photocurrent Suppression of Transparent Organic Thin Film Transistors

NASA Astrophysics Data System (ADS)

Chuang, Chiao-Shun; Tsai, Shu-Ting; Lin, Yung-Sheng; Chen, Fang-Chung; Shieh, Hang-Ping D.

2007-12-01

Organic thin-film transistors (OTFTs) with high transmittance and low photosensitivity have been demonstrated. By using titanium dioxide nanoparticles as the additives in the polymer gate insulators, the level of device photoresponse has been reduced. The device shows simultaneously a high transparence and a minimal threshold voltage shift under white light illumination. It is inferred that the localized energy levels deep in the energy gap of pentacene behave as the recombination centers, enhancing substantially the recombination process in the conducting channel of the OTFTs. Therefore, the electron trapping is relieved and the shift of threshold voltage is reduced upon illumination.

Delayed avalanche breakdown of high-voltage silicon diodes: Various structures exhibit different picosecond-range switching behavior

NASA Astrophysics Data System (ADS)

Brylevskiy, Viktor; Smirnova, Irina; Gutkin, Andrej; Brunkov, Pavel; Rodin, Pavel; Grekhov, Igor

2017-11-01

We present a comparative study of silicon high-voltage diodes exhibiting the effect of delayed superfast impact-ionization breakdown. The effect manifests itself in a sustainable picosecond-range transient from the blocking to the conducting state and occurs when a steep voltage ramp is applied to the p+-n-n+ diode in the reverse direction. Nine groups of diodes with graded and abrupt pn-junctions have been specially fabricated for this study by different techniques from different Si substrates. Additionally, in two groups of these structures, the lifetime of nonequilibrium carriers was intentionally reduced by electron irradiation. All diodes have identical geometrical parameters and similar stationary breakdown voltages. Our experimental setup allows measuring both device voltage and current during the kilovolt switching with time resolution better than 50 ps. Although all devices are capable of forming a front with kilovolt amplitude and 100 ps risetime in the in-series load, the structures with graded pn-junctions have anomalously large residual voltage. The Deep Level Transient Spectroscopy study of all diode structures has been performed in order to evaluate the effect of deep centers on device performance. It was found that the presence of deep-level electron traps negatively correlates with parameters of superfast switching, whereas a large concentration of recombination centers created by electron irradiation has virtually no influence on switching characteristics.

Fault tree analysis: NiH2 aerospace cells for LEO mission

NASA Technical Reports Server (NTRS)

Klein, Glenn C.; Rash, Donald E., Jr.

1992-01-01

The Fault Tree Analysis (FTA) is one of several reliability analyses or assessments applied to battery cells to be utilized in typical Electric Power Subsystems for spacecraft in low Earth orbit missions. FTA is generally the process of reviewing and analytically examining a system or equipment in such a way as to emphasize the lower level fault occurrences which directly or indirectly contribute to the major fault or top level event. This qualitative FTA addresses the potential of occurrence for five specific top level events: hydrogen leakage through either discrete leakage paths or through pressure vessel rupture; and four distinct modes of performance degradation - high charge voltage, suppressed discharge voltage, loss of capacity, and high pressure.

Large Magnetoresistance at High Bias Voltage in Double-layer Organic Spin Valves

NASA Astrophysics Data System (ADS)

Subedi, R. C.; Liang, S. H.; Geng, R.; Zhang, Q. T.; Lou, L.; Wang, J.; Han, X. F.; Nguyen, T. D.

We report studies of magnetoresistance (MR) in double-layer organic spin valves (DOSV) using tris (8-hydroxyquinolinato) aluminum (Alq3) spacers. The device exhibits three distinct resistance levels depending on the relative magnetizations of the ferromagnetic electrodes. We observed a much weaker bias voltage dependence of MR in the device compared to that in the conventional organic spin valve (OSV). The MR magnitude reduces by the factor of two at 0.7 V bias voltage in the DOSV compared to 0.02 V in the conventional OSV. Remarkably, the MR magnitude reaches 0.3% at 6 V bias in the DOSVs, the largest MR response ever reported in OSVs at this bias. Our finding may have a significant impact on achieving high efficient bipolar OSVs strictly performed at high voltages. University of Georgia start-up fund, Ministry of Education, Singapore, National Natural Science Foundation of China.

Deep Space One High-Voltage Bus Management

NASA Technical Reports Server (NTRS)

Rachocki, Ken; Nieraeth, Donald

1999-01-01

The design of the High Voltage Power Converter Unit on DS1 allows both the spacecraft avionics and ion propulsion to operate in a stable manner near the PPP of the solar array. This approach relies on a fairly well-defined solar array model to determine the projected PPP. The solar array voltage set-points have to be updated every week to maintain operation near PPP. Stable operation even to the LEFT of the Peak Power Point is achievable so long as you do not change the operating power level of the ion engine. The next step for this technology is to investigate the use of onboard autonomy to determine the optimum SA voltage regulation set-point (i.e. near the PPP); this is for future missions that have one or more ion propulsion subsystems.

Publications | Energy Systems Integration Facility | NREL

Science.gov Websites

100% Renewable Grid: Operating Electric Power Systems with Extremely High Levels of Variable Renewable timeline. Feeder Voltage Regulation with High-Penetration PV Using Advanced Inverters and a Distribution Integrating High Levels of Variable Renewable Energy into Electric Power Systems, Journal of Modern Power

MO-FG-CAMPUS-IeP2-05: Feasibility Demonstration of High-Voltage Clinical CT and Impact On X-Ray Penetration Through Metal Objects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jin, Y; De Man, B; Robinson, V

Purpose: To demonstrate the possibility and quantify the impact of operating a clinical CT scanner at exceptionally high x-ray tube voltage for better penetration through metal objects and facilitating metal artifact reduction. Methods: We categorize metal objects according to the data corruption severeness (level of distortion and complete photon starvation fraction). To demonstrate feasibility and investigate the impact of high voltage scanning we modified a commercial GE LightSpeed VCT scanner (generator and software) to enable CT scans with x-ray tube voltages as high as 175 kVp. A 20 cm diameter water phantom with two metal rods (10 mm stainless andmore » 25 mm titanium) and a water phantom with realistic metal object (spine cage) were used to evaluate the data corruption and image artifacts in the absence of any algorithm correction. We also performed simulations to confirm our understanding of the transmitted photon levels through metal objects with different size and composition. Results: The reconstructed images at 175 kVp still have significant dark shading artifacts, as expected since no special scatter correction or beam hardening was performed but show substantially lower noise and photon starvation than at lower kVp due to better beam penetration. Analysis of the raw data shows that the photon starved data is reduced from over 4% at 140 kVp to below 0.2% at 175 kVp. The simulations indicate that for clinically relevant titanium and stainless objects a 175 kVp tube voltage effectively avoids photon starvation. Conclusion: The use of exceptionally high tube voltage on a clinical CT system is a practical and effective solution to avoid photon starvation caused by certain metal implants. Sparse and hybrid high-voltage protocols are being considered to maintain low patient dose. This opens the door to algorithmic physics-based corrections rather than treating the data as missing and relying on missing data algorithms. Some of the authors are employees of General Electric.« less

Design and Comparison of Cascaded H-Bridge, Modular Multilevel Converter, and 5-L Active Neutral Point Clamped Topologies for Motor Drive Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marzoughi, Alinaghi; Burgos, Rolando; Boroyevich, Dushan

This paper presents the design procedure and comparison of converters currently used in medium-voltage high-power motor drive applications. For this purpose, the cascaded H-bridge (CHB), modular multilevel converter (MMC), and five-level active neutral point clamped (5-L ANPC) topologies are targeted. The design is performed using 1.7-kV insulated gate bipolar transistors (IGBTs) for CHB and MMC converters, and utilizing 3.3- and 4.5-kV IGBTs for 5-L ANPC topology as normally done in industry. The comparison is done between the designed converter topologies at three different voltage levels (4.16, 6.9, and 13.8 kV, with only the first two voltage levels in case ofmore » the 5-L ANPC) and two different power levels (3 and 5 MVA), in order to elucidate the dependence of different parameters on voltage and power rating. Finally, the comparison is done from several points of view such as efficiency, capacitive energy storage, semiconductor utilization, parts count (for measure of reliability), and power density.« less

Investigation of Defect Distributions in SiO2/AlGaN/GaN High-Electron-Mobility Transistors by Using Capacitance-Voltage Measurement with Resonant Optical Excitation

NASA Astrophysics Data System (ADS)

Kim, Tae-Soo; Lim, Seung-Young; Park, Yong-Keun; Jung, Gunwoo; Song, Jung-Hoon; Cha, Ho-Young; Han, Sang-Woo

2018-06-01

We investigated the distributions and the energy levels of defects in SiO2/AlGaN/GaN highelectron-mobility transistors (HEMTs) by using frequency-dependent ( F- D) capacitance-voltage ( C- V) measurements with resonant optical excitation. A Schottky barrier (SB) and a metal-oxidesemiconductor (MOS) HEMT were prepared to compare the effects of defects in their respective layers. We also investigated the effects of those layers on the threshold voltage ( V th ). A drastic voltage shift in the C- V curve at higher frequencies was caused by the large number of defect levels in the SiO2/GaN interface. A significant shift in V th with additional light illumination was observed due to a charging of the defect states in the SiO2/GaN interface. The voltage shifts were attributed to the detrapping of defect states at the SiO2/GaN interface.

Design, Control, and Modeling of a New Voltage Source Converter for HVDC System

NASA Astrophysics Data System (ADS)

Mohan, Madhan; Singh, Bhim; Ketan Panigrahi, Bijaya

2013-05-01

Abstract: A New Voltage Source Converter (VSC) based on neutral clamped three-level circuit is proposed for High Voltage DC (HVDC) system. The proposed VSC is designed in a multipulse configuration. The converter is operated by Fundamental Frequency Switching (FFS). A new control method is developed for achieving all the necessary control aspects of HVDC system such as independent real and reactive power control, bidirectional real and reactive power control. The basic of the control method is varying the pulse width and by keeping the dc link voltage constant. The steady state and dynamic performances of HVDC system interconnecting two different frequencies network are demonstrated for active and reactive power control. Total number of transformers used in this system are reduced to half in comparison with the two-level VSCs for both active and reactive power control. The performance of the HVDC system is improved in terms of reduced harmonics level even at fundamental frequency switching. The harmonic performance of the designed converter is also studied for different value of the dead angle (β), and the optimized range of the dead angle is achieved for varying reactive power requirement. Simulation results are presented for the designed three level multipulse voltage source converters with the proposed control algorithm.

Deflection amplifier for image dissectors

NASA Technical Reports Server (NTRS)

Salomon, P. M.

1977-01-01

Balanced symmetrical y-axis amplifier uses zener-diode level shifting to interface operational amplifiers to high voltage bipolar output stages. Nominal voltage transfer characteristic is 40 differential output volts per input volt; bandwidth, between -3-dB points, is approximately 8 kHz; loop gain is nominally 89 dB with closed loop gain of 26 dB.

Device for modular input high-speed multi-channel digitizing of electrical data

DOEpatents

VanDeusen, Alan L.; Crist, Charles E.

1995-09-26

A multi-channel high-speed digitizer module converts a plurality of analog signals to digital signals (digitizing) and stores the signals in a memory device. The analog input channels are digitized simultaneously at high speed with a relatively large number of on-board memory data points per channel. The module provides an automated calibration based upon a single voltage reference source. Low signal noise at such a high density and sample rate is accomplished by ensuring the A/D converters are clocked at the same point in the noise cycle each time so that synchronous noise sampling occurs. This sampling process, in conjunction with an automated calibration, yields signal noise levels well below the noise level present on the analog reference voltages.

Design of a fast computer-based partial discharge diagnostic system

NASA Technical Reports Server (NTRS)

Oliva, Jose R.; Karady, G. G.; Domitz, Stan

1991-01-01

Partial discharges cause progressive deterioration of insulating materials working in high voltage conditions and may lead ultimately to insulator failure. Experimental findings indicate that deterioration increases with the number of discharges and is consequently proportional to the magnitude and frequency of the applied voltage. In order to obtain a better understanding of the mechanisms of deterioration produced by partial discharges, instrumentation capable of individual pulse resolution is required. A new computer-based partial discharge detection system was designed and constructed to conduct long duration tests on sample capacitors. This system is capable of recording large number of pulses without dead time and producing valuable information related to amplitude, polarity, and charge content of the discharges. The operation of the system is automatic and no human supervision is required during the testing stage. Ceramic capacitors were tested at high voltage in long duration tests. The obtained results indicated that the charge content of partial discharges shift towards high levels of charge as the level of deterioration in the capacitor increases.

Measurement and Modeling of Personal Exposure to the Electric and Magnetic Fields in the Vicinity of High Voltage Power Lines.

PubMed

Tourab, Wafa; Babouri, Abdesselam

2016-06-01

This work presents an experimental and modeling study of the electromagnetic environment in the vicinity of a high voltage substation located in eastern Algeria (Annaba city) specified with a very high population density. The effects of electromagnetic fields emanating from the coupled multi-lines high voltage power systems (MLHV) on the health of the workers and people living in proximity of substations has been analyzed. Experimental Measurements for the Multi-lines power system proposed have been conducted in the free space under the high voltage lines. Field's intensities were measured using a referenced and calibrated electromagnetic field meter PMM8053B for the levels 0 m, 1 m, 1.5 m and 1.8 m witch present the sensitive's parts as organs and major functions (head, heart, pelvis and feet) of the human body. The measurement results were validated by numerical simulation using the finite element method and these results are compared with the limit values of the international standards. We project to set own national standards for exposure to electromagnetic fields, in order to achieve a regional database that will be at the disposal of partners concerned to ensure safety of people and mainly workers inside high voltage electrical substations.

Closed-loop pulsed helium ionization detector

DOEpatents

Ramsey, Roswitha S.; Todd, Richard A.

1987-01-01

A helium ionization detector for gas chromatography is operated in a constant current, pulse-modulated mode by configuring the detector, electrometer and a high voltage pulser in a closed-loop control system. The detector current is maintained at a fixed level by varying the frequency of fixed-width, high-voltage bias pulses applied to the detector. An output signal proportional to the pulse frequency is produced which is indicative of the charge collected for a detected species.

Magnetically switched power supply system for lasers

NASA Technical Reports Server (NTRS)

Pacala, Thomas J. (Inventor)

1987-01-01

A laser power supply system is described in which separate pulses are utilized to avalanche ionize the gas within the laser and then produce a sustained discharge to cause the gas to emit light energy. A pulsed voltage source is used to charge a storage device such as a distributed capacitance. A transmission line or other suitable electrical conductor connects the storage device to the laser. A saturable inductor switch is coupled in the transmission line for containing the energy within the storage device until the voltage level across the storage device reaches a predetermined level, which level is less than that required to avalanche ionize the gas. An avalanche ionization pulse generating circuit is coupled to the laser for generating a high voltage pulse of sufficient amplitude to avalanche ionize the laser gas. Once the laser gas is avalanche ionized, the energy within the storage device is discharged through the saturable inductor switch into the laser to provide the sustained discharge. The avalanche ionization generating circuit may include a separate voltage source which is connected across the laser or may be in the form of a voltage multiplier circuit connected between the storage device and the laser.

Batteryless magneto-driven portable radiac

DOEpatents

Waechter, D.A.; Bjarke, G.O.; Trujillo, F.; Wolf, M.A.; Umbarger, C.J.

1984-10-19

A hand-powerd alternator for generating an alternating voltage provides same through a rectifier to a high capacity capacitor which stores the resultant dc voltage and drives a voltage regulator to provide a constant low voltage output for a portable radiation detection instrument. The instrument includes a Geiger-Mueller detector tube whose output is fed to a pulse detector and then through an event counter and LCD driver circuit to an LCD bar graph for visual display. An audio driver and an audio output is also provided. All circuitry used is low power so that the capacitor can be readily charged to a sufficient level to provide power for at least 30 minutes. A low voltage indicator is provided on the LCD display to indicate the need for manual recharging.

Batteryless magneto-driven portable radiac

DOEpatents

Waechter, David A.; Bjarke, George O.; Trujillo, Faustin; Wolf, Michael A.; Umbarger, C. John

1986-01-01

A hand-powered alternator for generating an alternating voltage provides same through a rectifier to a high capacity capacitor which stores the resultant dc voltage and drives a voltage regulator to provide a constant low voltage output for a portable radiation detection instrument. The instrument includes a Geiger-Muller detector tube whose output is fed to a pulse detector and then through an event counter and LCD driver circuit to an LCD bar graph for visual display. An audio driver and an audio output is also provided. All circuitry used is low power so that the capacitor can be readily charged to a sufficient level to provide power for at least 30 minutes. A low voltage indicator is provided on the LCD display to indicate the need for manual recharging.

Macro Fiber Piezocomposite Actuator Poling Study

NASA Technical Reports Server (NTRS)

Werlink, Rudy J.; Bryant, Robert G.; Manos, Dennis

2002-01-01

The performance and advantages of Piezocomposite Actuators are to provide a low cost, in-situ actuator/sensor that is flexible, low profile and high strain per volt performance in the same plane of poled voltage. This paper extends reported data for the performance of these Macrofiber Composite (MFC) Actuators to include 4 progressively narrower Intedigitized electrode configurations with several line widths and spacing ratios. Data is reported for max free strain, average strain per applied volt, poling (alignment of the electric dipoles of the PZT ceramic) voltage vs. strain and capacitance, time to poling voltage 95% saturation. The output strain per volt progressively increases as electrode spacing decreases, with saturation occurring at lower poling voltages. The narrowest spacing ratio becomes prone to voltage breakdown or short circuits limiting the spacing width with current fabrication methods. The capacitance generally increases with increasing poling voltage level but has high sensitivity to factors such as temperature, moisture and time from poling which limit its usefulness as a simple indicator. The total time of applied poling voltage to saturate or fully line up the dipoles in the piezoceramic was generally on the order of 5-20 seconds. Less sensitivity to poling due to the applied rate of voltage increase over a 25 to 500 volt/second rate range was observed.

High-resolution simultaneous voltage and Ca2+ imaging

PubMed Central

Vogt, Kaspar E; Gerharz, Stephan; Graham, Jeremy; Canepari, Marco

2011-01-01

Combining voltage and Ca2+ imaging allows the correlation of electrical and chemical activity at sub-cellular level. Here we describe a novel apparatus designed to obtain simultaneous voltage and Ca2+ measurements with single-trial resolution from sites as small as a few microns. These measurements can be obtained with negligible optical cross-talk between the two signals and negligible photo-damage of the preparation. The capability of the technique was assessed recording either from individual neurons in brain slices or from networks of cultured neurons. The present achievements open the gate to many novel physiological investigations requiring simultaneous measurement of voltage and Ca2+ signals. PMID:21115640

The characteristics and limitations of the MPS/MMS battery charging system

NASA Technical Reports Server (NTRS)

Ford, F. E.; Palandati, C. F.; Davis, J. F.; Tasevoli, C. M.

1980-01-01

A series of tests was conducted on two 12 ampere hour nickel cadmium batteries under a simulated cycle regime using the multiple voltage versus temperature levels designed into the modular power system (MPS). These tests included: battery recharge as a function of voltage control level; temperature imbalance between two parallel batteries; a shorted or partially shorted cell in one of the two parallel batteries; impedance imbalance of one of the parallel battery circuits; and disabling and enabling one of the batteries from the bus at various charge and discharge states. The results demonstrate that the eight commandable voltage versus temperature levels designed into the MPS provide a very flexible system that not only can accommodate a wide range of normal power system operation, but also provides a high degree of flexibility in responding to abnormal operating conditions.

Hypervelocity Impact Studies on Solar Cell Modules

NASA Technical Reports Server (NTRS)

Brandhorst, Henry W., Jr.; Best, Stevie R.

2001-01-01

Space environmental effects have caused severe problems as satellites move toward increased power and operating voltage levels. The greatest unknown, however, is the effect of high velocity micrometeoroid impacts on high voltage arrays (>200V). Understanding such impact phenomena is necessary for the design of future reliable, high voltage solar arrays, especially for Space Solar Power applications. Therefore, the objective of this work was to study the effect of hypervelocity impacts on high voltage solar arrays. Initially, state of the art, 18% efficient GaAs solar cell strings were targeted. The maximum bias voltage on a two-cell string was -200 V while the adjacent string was held at -140 V relative to the plasma potential. A hollow cathode device provided the plasma. Soda lime glass particles 40-120 micrometers in diameter were accelerated in the Hypervelocity Impact Facility to velocities as high as 11.6 km/sec. Coordinates and velocity were obtained for each of the approximately 40 particle impact sites on each shot. Arcing did occur, and both discharging and recharging of arcs between the two strings was observed. The recharging phenomena appeared to stop at approximately 66V string differential. No arcing was observed at 400 V on concentrator cell modules for the Stretched Lens Array.

Aging, Loss-of-Coolant Accident (LOCA), and high potential testing of damaged cables

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vigil, R.A.; Jacobus, M.J.

1994-04-01

Experiments were conducted to assess the effects of high potential testing of cables and to assess the survivability of aged and damaged cables under Loss-of-Coolant Accident (LOCA) conditions. High potential testing at 240 Vdc/mil on undamaged cables suggested that no damage was incurred on the selected virgin cables. During aging and LOCA testing, Okonite ethylene propylene rubber (EPR) cables with a bonded jacket experienced unexpected failures. The failures appear to be primarily related to the level of thermal aging and the presence of a bonded jacket that ages more rapidly than the insulation. For Brand Rex crosslinked polyolefin (XLPO) cables,more » the results suggest that 7 mils of insulation remaining should give the cables a high probability of surviving accident exposure following aging. The voltage necessary to detect when 7 mils of insulation remain on unaged Brand Rex cables is approximately 35 kVdc. This voltage level would almost certainly be unacceptable to a utility for use as a damage assessment tool. However, additional tests indicated that a 35 kvdc voltage application would not damage virgin Brand Rex cables when tested in water. Although two damaged Rockbestos silicone rubber cables also failed during the accident test, no correlation between failures and level of damage was apparent.« less

A rugged 650 V SOI-based high-voltage half-bridge IGBT gate driver IC for motor drive applications

NASA Astrophysics Data System (ADS)

Hua, Qing; Li, Zehong; Zhang, Bo; Chen, Weizhong; Huang, Xiangjun; Feng, Yuxiang

2015-05-01

This paper proposes a rugged high-voltage N-channel insulated gate bipolar transistor (IGBT) gate driver integrated circuit. The device integrates a high-side and a low-side output stages on a single chip, which is designed specifically for motor drive applications. High-voltage level shift technology enables the high-side stage of this device to operate up to 650 V. The logic inputs are complementary metal oxide semiconductor (CMOS)/transistor transistor logic compatible down to 3.3 V. Undervoltage protection functionality with hysteresis characteristic has also been integrated to enhance the device reliability. The device is fabricated in a 1.0 μm, 650 V high-voltage bipolar CMOS double-diffused metal oxide semiconductor (BCD) on silicon-on-insulator (SOI) process. Deep trench dielectric isolation technology is employed to provide complete electrical isolation with advantages such as reduced parasitic effects, excellent noise immunity and low leakage current. Experimental results show that the isolation voltage of this device can be up to approximately 779 V at 25°C, and the leakage current is only 5 nA at 650 V, which is 15% higher and 67% lower than the conventional ones. In addition, it delivers an excellent thermal stability and needs very low quiescent current and offers a high gate driver capability which is needed to adequately drive IGBTs that have large input capacitances.

An analog RF gap voltage regulation system for the Advanced Photon Source storage ring.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Horan, D.

1999-04-13

An analog rf gap voltage regulation system has been designed and built at Argonne National Laboratory to maintain constant total storage ring rf gap voltage, independent of beam loading and cavity tuning effects. The design uses feedback control of the klystron mod-anode voltage to vary the amount of rf power fed to the storage ring cavities. The system consists of two independent feedback loops, each regulating the combined rf gap voltages of eight storage ring cavities by varying the output power of either one or two rf stations, depending on the mode of operation. It provides full operator control andmore » permissive logic to permit feedback control of the rf system output power only if proper conditions are met. The feedback system uses envelope-detected cavity field probe outputs as the feedback signal. Two different methods of combining the individual field probe signals were used to generate a relative DC level representing one-half of the total storage ring rf voltage, an envelope-detected vector sum of the field probe rf signals, and the DC sum of individual field probe envelope detector outputs. The merits of both methods are discussed. The klystron high-voltage power supply (HVPS) units are fitted with an analog interface for external control of the mod-anode voltage level, using a four-quadrant analog multiplier to modulate the HVPS mod-anode voltage regulator set-point in response to feedback system commands.« less

A voltage to frequency converter for astronomical photometry

NASA Technical Reports Server (NTRS)

Dunham, E.; Elliot, J. L.

1978-01-01

A voltage to frequency converter (VFC) for general use with photomultipliers is described. For high light levels, when the dead-time corrections for a photon counter would be excessive, the VFC maintains a linear response and allows the recording of data at high time resolution. Results of laboratory tests are given for the signal-to-noise characteristics, linearity, stability, and transient response of the VFC when used in conjunction with EMI 9658 and RCA C31034 photomultipliers.

Low Voltage, Low Power Organic Light Emitting Transistors for AMOLED Displays

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCarthy, M. A.; Liu, B.; Donoghue, E. P.

2011-01-01

Low voltage, low power dissipation, high aperture ratio organic light emitting transistors are demonstrated. The high level of performance is enabled by a carbon nanotube source electrode that permits integration of the drive transistor and the organic light emitting diode into an efficient single stacked device. Given the demonstrated performance, this technology could break the technical logjam holding back widespread deployment of active matrix organic light emitting displays at flat panel screen sizes.

A study on the high temperature-dependence of the electrical properties in a solution-deposited zinc-tin-oxide thin-film transistor operated in the saturation region

NASA Astrophysics Data System (ADS)

Yu, Kyeong Min; Bae, Byung Seong; Jung, Myunghee; Yun, Eui-Jung

2016-06-01

We investigate the effects of high temperatures in the range of 292 - 393 K on the electrical properties of solution-processed amorphous zinc-tin-oxide (a-ZTO) thin-film transistors (TFTs) operated in the saturation region. The fabricated a-ZTO TFTs have a non-patterned bottom gate and top contact structure, and they use a heavily-doped Si wafer and SiO2 as a gate electrode and a gate insulator layer, respectively. In a-ZTO TFTs, the trap release energy ( E TR ) was deduced by using Maxwell-Boltzmann statistics. The decreasing E TR toward zero with increasing gate voltage (the density of trap states ( n s )) in the a-ZTO active layer can be attributed to a shift of the Fermi level toward the mobility edge with increasing gate voltage. The TFTs with low gate voltage (low n s ) exhibit multiple trap and release characteristics and show thermally-activated behavior. In TFTs with a high gate voltage (high n s ), however, we observe decreasing mobility and conductivity with increasing temperature at temperatures ranging from 303 to 363 K. This confirms that the E TR can drop to zero, indicating a shift of the Fermi level beyond the mobility edge. Hence, the mobility edge is detected at the cusp between thermally-activated transport and band transport.

Voltage Preconditioning Allows Modulated Gene Expression in Neurons Using PEI-complexed siRNA

PubMed Central

Sridharan, Arati; Patel, Chetan; Muthuswamy, Jit

2013-01-01

We present here a high efficiency, high viability siRNA-delivery method using a voltage-controlled chemical transfection strategy to achieve modulated delivery of polyethylenimine (PEI) complexed with siRNA in an in vitro culture of neuro2A cells and neurons. Low voltage pulses were applied to adherent cells before the administration of PEI-siRNA complexes. Live assays of neuro2a cells transfected with fluorescently tagged siRNA showed an increase in transfection efficiency from 62 ± 14% to 98 ± 3.8% (after −1 V). In primary hippocampal neurons, transfection efficiencies were increased from 30 ± 18% to 76 ± 18% (after −1 V). Negligible or low-level transfection was observed after preconditioning at higher voltages, suggesting an inverse relationship with applied voltage. Experiments with propidium iodide ruled out the role of electroporation in the transfection of siRNAs suggesting an alternate electro-endocytotic mechanism. In addition, image analysis of preconditioned and transfected cells demonstrates siRNA uptake and loading that is tuned to preconditioning voltage levels. There is approximately a fourfold increase in siRNA loading after preconditioning at −1 V compared with the same at ±2–3 V. Modulated gene expression is demonstrated in a functional knockdown of glyceraldehyde 3-phosphate dehydrogenase (GAPDH) in neuro2A cells using siRNA. Cell density and dendritic morphological changes are also demonstrated in modulated knockdown of brain derived neurotrophic factor (BDNF) in primary hippocampal neurons. The method reported here has potential applications in the development of high-throughput screening systems for large libraries of siRNA molecules involving difficult-to-transfect cells like neurons. PMID:23531602

Voltage Preconditioning Allows Modulated Gene Expression in Neurons Using PEI-complexed siRNA.

PubMed

Sridharan, Arati; Patel, Chetan; Muthuswamy, Jit

2013-03-26

We present here a high efficiency, high viability siRNA-delivery method using a voltage-controlled chemical transfection strategy to achieve modulated delivery of polyethylenimine (PEI) complexed with siRNA in an in vitro culture of neuro2A cells and neurons. Low voltage pulses were applied to adherent cells before the administration of PEI-siRNA complexes. Live assays of neuro2a cells transfected with fluorescently tagged siRNA showed an increase in transfection efficiency from 62 ± 14% to 98 ± 3.8% (after -1 V). In primary hippocampal neurons, transfection efficiencies were increased from 30 ± 18% to 76 ± 18% (after -1 V). Negligible or low-level transfection was observed after preconditioning at higher voltages, suggesting an inverse relationship with applied voltage. Experiments with propidium iodide ruled out the role of electroporation in the transfection of siRNAs suggesting an alternate electro-endocytotic mechanism. In addition, image analysis of preconditioned and transfected cells demonstrates siRNA uptake and loading that is tuned to preconditioning voltage levels. There is approximately a fourfold increase in siRNA loading after preconditioning at -1 V compared with the same at ±2-3 V. Modulated gene expression is demonstrated in a functional knockdown of glyceraldehyde 3-phosphate dehydrogenase (GAPDH) in neuro2A cells using siRNA. Cell density and dendritic morphological changes are also demonstrated in modulated knockdown of brain derived neurotrophic factor (BDNF) in primary hippocampal neurons. The method reported here has potential applications in the development of high-throughput screening systems for large libraries of siRNA molecules involving difficult-to-transfect cells like neurons.Molecular Therapy-Nucleic Acids (2013) 2, e82; doi:10.1038/mtna.2013.10; published online 26 March 2013.

Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Omura, Yasuhisa; Mori, Yoshiaki; Sato, Shingo; Mallik, Abhijit

2018-04-01

This paper discusses the role of trap-assisted-tunneling process in controlling the ON- and OFF-state current levels and its impacts on the current-voltage characteristics of a tunnel field-effect transistor. Significant impacts of high-density traps in the source region are observed that are discussed in detail. With regard to recent studies on isoelectronic traps, it has been discovered that deep level density must be minimized to suppress the OFF-state leakage current, as is well known, whereas shallow levels can be utilized to control the ON-state current level. A possible mechanism is discussed based on simulation results.

Device for modular input high-speed multi-channel digitizing of electrical data

DOEpatents

VanDeusen, A.L.; Crist, C.E.

1995-09-26

A multi-channel high-speed digitizer module converts a plurality of analog signals to digital signals (digitizing) and stores the signals in a memory device. The analog input channels are digitized simultaneously at high speed with a relatively large number of on-board memory data points per channel. The module provides an automated calibration based upon a single voltage reference source. Low signal noise at such a high density and sample rate is accomplished by ensuring the A/D converters are clocked at the same point in the noise cycle each time so that synchronous noise sampling occurs. This sampling process, in conjunction with an automated calibration, yields signal noise levels well below the noise level present on the analog reference voltages. 1 fig.

Characterization and Modeling of High Power Microwave Effects in CMOS Microelectronics

DTIC Science & Technology

2010-01-01

margin measurement 28 Any voltage above the line marked VIH is considered a valid logic high on the input of the gate. VIH and VIL are defined...can handle any voltage noise level at the input up to VIL without changing state. The region in between VIL and VIH is considered an invalid logic...29 Table 2.2: Intrinsic device characteristics derived from SPETCRE simulations   VIH  (V)  VIL (V)  High Noise Margin  (V)  Low Noise Margin (V

Tunneling effects in the current-voltage characteristics of high-efficiency GaAs solar cells

NASA Technical Reports Server (NTRS)

Kachare, R.; Anspaugh, B. E.; Garlick, G. F. J.

1988-01-01

Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.

Carrier velocity effect on carbon nanotube Schottky contact

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fathi, Amir, E-mail: fathi.amir@hotmail.com; Ahmadi, M. T., E-mail: mt.ahmadi@urmia.ac.ir; Ismail, Razali, E-mail: Razali@fke.utm.my

One of the most important drawbacks which caused the silicon based technologies to their technical limitations is the instability of their products at nano-level. On the other side, carbon based materials such as carbon nanotube (CNT) as alternative materials have been involved in scientific efforts. Some of the important advantages of CNTs over silicon components are high mechanical strength, high sensing capability and large surface-to-volume ratio. In this article, the model of CNT Schottky transistor current which is under exterior applied voltage is employed. This model shows that its current has a weak dependence on thermal velocity corresponding to themore » small applied voltage. The conditions are quite different for high bias voltages which are independent of temperature. Our results indicate that the current is increased by Fermi velocity, but the I–V curves will not have considerable changes with the variations in number of carriers. It means that the current doesn’t increase sharply by voltage variations over different number of carriers.« less

The design and development of low- and high-voltage ASICs for space-borne CCD cameras

NASA Astrophysics Data System (ADS)

Waltham, N.; Morrissey, Q.; Clapp, M.; Bell, S.; Jones, L.; Torbet, M.

2017-12-01

The CCD remains the pre-eminent visible and UV wavelength image sensor in space science, Earth and planetary remote sensing. However, the design of space-qualified CCD readout electronics is a significant challenge with requirements for low-volume, low-mass, low-power, high-reliability and tolerance to space radiation. Space-qualified components are frequently unavailable and up-screened commercial components seldom meet project or international space agency requirements. In this paper, we describe an alternative approach of designing and space-qualifying a series of low- and high-voltage mixed-signal application-specific integrated circuits (ASICs), the ongoing development of two low-voltage ASICs with successful flight heritage, and two new high-voltage designs. A challenging sub-system of any CCD camera is the video processing and digitisation electronics. We describe recent developments to improve performance and tolerance to radiation-induced single event latchup of a CCD video processing ASIC originally developed for NASA's Solar Terrestrial Relations Observatory and Solar Dynamics Observatory. We also describe a programme to develop two high-voltage ASICs to address the challenges presented with generating a CCD's bias voltages and drive clocks. A 0.35 μm, 50 V tolerant, CMOS process has been used to combine standard low-voltage 3.3 V transistors with high-voltage 50 V diffused MOSFET transistors that enable output buffers to drive CCD bias drains, gates and clock electrodes directly. We describe a CCD bias voltage generator ASIC that provides 24 independent and programmable 0-32 V outputs. Each channel incorporates a 10-bit digital-to-analogue converter, provides current drive of up to 20 mA into loads of 10 μF, and includes current-limiting and short-circuit protection. An on-chip telemetry system with a 12-bit analogue-to-digital converter enables the outputs and multiple off-chip camera voltages to be monitored. The ASIC can drive one or more CCDs and replaces the many discrete components required in current cameras. We also describe a CCD clock driver ASIC that provides six independent and programmable drivers with high-current capacity. The device enables various CCD clock parameters to be programmed independently, for example the clock-low and clock-high voltage levels, and the clock-rise and clock-fall times, allowing configuration for serial clock frequencies in the range 0.1-2 MHz and image clock frequencies in the range 10-100 kHz. Finally, we demonstrate the impact and importance of this technology for the development of compact, high-performance and low-power integrated focal plane electronics.

A new balancing three level three dimensional space vector modulation strategy for three level neutral point clamped four leg inverter based shunt active power filter controlling by nonlinear back stepping controllers.

PubMed

Chebabhi, Ali; Fellah, Mohammed Karim; Kessal, Abdelhalim; Benkhoris, Mohamed F

2016-07-01

In this paper is proposed a new balancing three-level three dimensional space vector modulation (B3L-3DSVM) strategy which uses a redundant voltage vectors to realize precise control and high-performance for a three phase three-level four-leg neutral point clamped (NPC) inverter based Shunt Active Power Filter (SAPF) for eliminate the source currents harmonics, reduce the magnitude of neutral wire current (eliminate the zero-sequence current produced by single-phase nonlinear loads), and to compensate the reactive power in the three-phase four-wire electrical networks. This strategy is proposed in order to gate switching pulses generation, dc bus voltage capacitors balancing (conserve equal voltage of the two dc bus capacitors), and to switching frequency reduced and fixed of inverter switches in same times. A Nonlinear Back Stepping Controllers (NBSC) are used for regulated the dc bus voltage capacitors and the SAPF injected currents to robustness, stabilizing the system and to improve the response and to eliminate the overshoot and undershoot of traditional PI (Proportional-Integral). Conventional three-level three dimensional space vector modulation (C3L-3DSVM) and B3L-3DSVM are calculated and compared in terms of error between the two dc bus voltage capacitors, SAPF output voltages and THDv, THDi of source currents, magnitude of source neutral wire current, and the reactive power compensation under unbalanced single phase nonlinear loads. The success, robustness, and the effectiveness of the proposed control strategies are demonstrated through simulation using Sim Power Systems and S-Function of MATLAB/SIMULINK. Copyright © 2016 ISA. Published by Elsevier Ltd. All rights reserved.

Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes

DOE PAGES

King, M. P.; Kaplar, R. J.; Dickerson, J. R.; ...

2016-10-31

Electrical performance and characterization of deep levels in vertical GaN P-i-N diodes grown on low threading dislocation density (~10 4 –10 6 cm –2) bulk GaN substrates are investigated. The lightly doped n drift region of these devices is observed to be highly compensated by several prominent deep levels detected using deep level optical spectroscopy at E c-2.13, 2.92, and 3.2 eV. A combination of steady-state photocapacitance and lighted capacitance-voltage profiling indicates the concentrations of these deep levels to be N t = 3 × 10 12, 2 × 10 15, and 5 × 10 14 cm –3, respectively. Themore » E c-2.92 eV level is observed to be the primary compensating defect in as-grown n-type metal-organic chemical vapor deposition GaN, indicating this level acts as a limiting factor for achieving controllably low doping. The device blocking voltage should increase if compensating defects reduce the free carrier concentration of the n drift region. Understanding the incorporation of as-grown and native defects in thick n-GaN is essential for enabling large V BD in the next-generation wide-bandgap power semiconductor devices. Furthermore, controlling the as-grown defects induced by epitaxial growth conditions is critical to achieve blocking voltage capability above 5 kV.« less

A Smart Load Interface and Voltage Regulator for Electrostatic Vibration Energy Harvester

NASA Astrophysics Data System (ADS)

Bedier, Mohammed; Basset, Philippe; Galayko, Dimitri

2016-11-01

This paper presents a new implementation in ams 0.35μm HV technology of a complete energy management system for an electrostatic vibrational energy harvester (e-VEH). It is based on the Bennet's doubler architecture and includes a load voltage regulator (LVR) and a smart Load Interface (LI) that are self-controlled with internal voltages for maximum power point tracking (MMPT). The CMOS implementation makes use of an energy harvester that is capable of producing up to 1.8μW at harmonic excitation, given its internal voltage is kept within its optimum. An intermediate LI stage and its controller makes use of a high side switch with zero static power level shifter, and a low power hysteresis comparator. A full circuit level simulation with a VHDL-AMS model of the e-VEH presented was successfully achieved, indicating that the proposed load interface controller consumes less than 100nW average power. Moreover, a LVR regulates the buffer and discharge the harvested energy into a generic resistive load maintaining the voltage within a nominal value of 2 Volts.

High Voltage Pulsed Radiofrequency for the Treatment of Refractory Neuralgia of the Infraorbital Nerve: A Prospective Double-Blinded Randomized Controlled Study.

PubMed

Luo, Fang; Wang, Tao; Shen, Ying; Meng, Lan; Lu, Jingjing; Ji, Nan

2017-05-01

A recent study showed that 50% of patients who suffered from refractory neuralgia of the infraorbital nerve obtained satisfactory efficacy after pulsed radiofrequency (PRF) treatment. A pilot study showed that increasing the output voltage of PRF significantly improved the efficacy for trigeminal neuralgia; however, whether increasing the output voltage of PRF can improve the treatment outcomes for neuralgia of the infraorbital nerve is unknown. To evaluate the efficacy and safety of high voltage PRF treatment in comparison with standard voltage PRF for neuralgia of the infraorbital nerve. Prospective, single-center, double-blinded, randomized, controlled trial. Beijing Tiantan Hospital, Capital Medical University. A total of 60 patients with refractory neuralgia of the infraorbital nerve were randomly divided into the high voltage PRF group and the standard voltage PRF group to treat their infraorbital nerves. Neither the patients, pain physicians, nor the follow-up evaluators knew the patient group assignments. The primary outcome measure was the one-year response rate. The secondary outcome measures included the time to take effect after PRF, the one-month, 3-month, and 6-month response rates, the relapse rate, and adverse reactions. The intent-to-treat analysis showed that the one-month, 3-month, 6-month, and one-year response rates were all 90% in the high voltage group, which were significantly higher than the rates in the standard voltage group (67% [P < 0.05], 67% [P < 0.05], 63% [P < 0.05], and 60% [P <0.01], respectively). Furthermore, 27% of the patients in the high-voltage group and 13% of the patients in the standard voltage group experienced minor transient (10 - 30 days) numbness in the innervation area after PRF; no other serious adverse reactions were observed in the 2 groups (P > 0.05). We did not investigate the dose-effect relationship between the output voltage and efficacy or the effect of a higher pulse dose on efficacy. This study was a single-center study, and multi-center, randomized, controlled studies are needed to obtain the highest level of empirical evidence. Additionally, the follow-up period lasted only one year in this study; thus, long-term efficacy needs to be further confirmed. The results showed that high voltage PRF was effective and safe for patients with refractory neuralgia of the infraorbital nerve and could become a treatment option in patients who do not respond to conservative treatment.

Voltage-induced ferromagnetic resonance in magnetic tunnel junctions.

PubMed

Zhu, Jian; Katine, J A; Rowlands, Graham E; Chen, Yu-Jin; Duan, Zheng; Alzate, Juan G; Upadhyaya, Pramey; Langer, Juergen; Amiri, Pedram Khalili; Wang, Kang L; Krivorotov, Ilya N

2012-05-11

We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs. As an example, we show that VCMA can increase the sensitivity of an MTJ-based microwave signal detector to the sensitivity level of semiconductor Schottky diodes.

Network-Cognizant Voltage Droop Control for Distribution Grids

DOE PAGES

Baker, Kyri; Bernstein, Andrey; Dall'Anese, Emiliano; ...

2017-08-07

Our paper examines distribution systems with a high integration of distributed energy resources (DERs) and addresses the design of local control methods for real-time voltage regulation. Particularly, the paper focuses on proportional control strategies where the active and reactive output-powers of DERs are adjusted in response to (and proportionally to) local changes in voltage levels. The design of the voltage-active power and voltage-reactive power characteristics leverages suitable linear approximation of the AC power-flow equations and is network-cognizant; that is, the coefficients of the controllers embed information on the location of the DERs and forecasted non-controllable loads/injections and, consequently, on themore » effect of DER power adjustments on the overall voltage profile. We pursued a robust approach to cope with uncertainty in the forecasted non-controllable loads/power injections. Stability of the proposed local controllers is analytically assessed and numerically corroborated.« less

Network-Cognizant Voltage Droop Control for Distribution Grids

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baker, Kyri; Bernstein, Andrey; Dall'Anese, Emiliano

Our paper examines distribution systems with a high integration of distributed energy resources (DERs) and addresses the design of local control methods for real-time voltage regulation. Particularly, the paper focuses on proportional control strategies where the active and reactive output-powers of DERs are adjusted in response to (and proportionally to) local changes in voltage levels. The design of the voltage-active power and voltage-reactive power characteristics leverages suitable linear approximation of the AC power-flow equations and is network-cognizant; that is, the coefficients of the controllers embed information on the location of the DERs and forecasted non-controllable loads/injections and, consequently, on themore » effect of DER power adjustments on the overall voltage profile. We pursued a robust approach to cope with uncertainty in the forecasted non-controllable loads/power injections. Stability of the proposed local controllers is analytically assessed and numerically corroborated.« less

Ion extraction capabilities of two-grid accelerator systems. [for spacecraft propulsion

NASA Technical Reports Server (NTRS)

Rovang, D. C.; Wilbur, P. J.

1984-01-01

An experimental investigation into the ion extraction capabilities of two-grid accelerator systems common to electrostatic ion thrusters is described. A large body of experimental data which facilitates the selection of the accelerator system geometries and operating parameters necessary to maximize the extracted ion current is presented. Results suggest that the impingement-limited perveance is not dramatically affected by reductions in screen hole diameter to 0.5 mm. Impingement-limited performance is shown to depend most strongly on grid separation distance, accelerator hole diameter ratio, the discharge-to-total accelerating voltage ratio, and the net-to-total accelerating voltage ratio. Results obtained at small grid separation ratios suggest a new grid operating condition where high beam current per hole levels are achieved at a specified net accelerating voltage. It is shown that this operating condition is realized at an optimum ratio of net-to-total accelerating voltage ratio which is typically quite high.

Achievement and improvement of the JT-60U negative ion source for JT-60 Super Advanced (invited)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kojima, A.; Hanada, M.; Tanaka, Y.

2010-02-15

Developments of the large negative ion source have been progressed in the high-energy, high-power, and long-pulse neutral beam injector for JT-60 Super Advanced. Countermeasures have been studied and tested for critical issues of grid heat load and voltage holding capability. As for the heat load of the acceleration grids, direct interception of D{sup -} ions was reduced by adjusting the beamlet steering. As a result, the heat load was reduced below an allowable level for long-pulse injections. As for the voltage holding capability, local electric field was mitigated by tuning gap lengths between large-area acceleration grids in the accelerator. Asmore » a result, the voltage holding capability was improved up to the rated value of 500 kV. To investigate the voltage holding capability during beam acceleration, the beam acceleration test is ongoing with new extended gap.« less

NREL Collaboration Breaks 1-Volt Barrier in CdTe Solar Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

2016-05-01

NREL scientists have worked with Washington State University and the University of Tennessee to improve the maximum voltage available from CdTe solar cells. Changes in dopants, stoichiometry, interface design, and defect chemistry improved the CdTe conductivity and carrier lifetime by orders of magnitude, thus enabling CdTe solar cells with open-circuit voltages exceeding 1 volt for the first time. Values of current density and fill factor for CdTe solar cells are already at high levels, but sub-par voltages has been a barrier to improved efficiencies. With voltages pushed beyond 1 volt, CdTe cells have a path to produce electricity at costsmore » less than fossil fuels.« less

Temporal development and chemical efficiency of positive streamers in a large scale wire-plate reactor as a function of voltage waveform parameters

NASA Astrophysics Data System (ADS)

Winands, G. J. J.; Liu, Z.; Pemen, A. J. M.; van Heesch, E. J. M.; Yan, K.; van Veldhuizen, E. M.

2006-07-01

In this paper a large-scale pulsed corona system is described in which pulse parameters such as pulse rise-time, peak voltage, pulse width and energy per pulse can be varied. The chemical efficiency of the system is determined by measuring ozone production. The temporal and spatial development of the discharge streamers is recorded using an ICCD camera with a shortest exposure time of 5 ns. The camera can be triggered at any moment starting from the time the voltage pulse arrives on the reactor, with an accuracy of less than 1 ns. Measurements were performed on an industrial size wire-plate reactor. The influence of pulse parameters like pulse voltage, DC bias voltage, rise-time and pulse repetition rate on plasma generation was monitored. It was observed that for higher peak voltages, an increase could be seen in the primary streamer velocity, the growth of the primary streamer diameter, the light intensity and the number of streamers per unit length of corona wire. No significant separate influence of DC bias voltage level was observed as long as the total reactor voltage (pulse + DC bias) remained constant and the DC bias voltage remained below the DC corona onset. For those situations in which the plasma appearance changed (e.g. different streamer velocity, diameter, intensity), a change in ozone production was also observed. The best chemical yields were obtained for low voltage (55 kV), low energetic pulses (0.4 J/pulse): 60 g (kWh)-1. For high voltage (86 kV), high energetic pulses (2.3 J/pulse) the yield decreased to approximately 45 g (kWh)-1, still a high value for ozone production in ambient air (RH 42%). The pulse repetition rate has no influence on plasma generation and on chemical efficiency up to 400 pulses per second.

Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

DOE PAGES

BastaniNejad, Mahzad; Elmustafa, Abdelmageed A.; Forman, Eric; ...

2015-07-01

DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (~nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>μA) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolishedmore » by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.« less

Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

DOE Office of Scientific and Technical Information (OSTI.GOV)

BastaniNejad, Mahzad; Elmustafa, Abdelmageed A.; Forman, Eric

DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (~nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>μA) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolishedmore » by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.« less

Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

DOE Office of Scientific and Technical Information (OSTI.GOV)

BastaniNejad, Mahzad, E-mail: Mahhzad@gmail.com; Elmustafa, Abdelmageed A.; Forman, Eric

DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (∼nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>μA) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolishedmore » by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The authors speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.« less

Statistical characteristics of transient enclosure voltage in ultra-high-voltage gas-insulated switchgear

NASA Astrophysics Data System (ADS)

Cai, Yuanji; Guan, Yonggang; Liu, Weidong

2017-06-01

Transient enclosure voltage (TEV), which is a phenomenon induced by the inner dielectric breakdown of SF6 during disconnector operations in a gas-insulated switchgear (GIS), may cause issues relating to shock hazard and electromagnetic interference to secondary equipment. This is a critical factor regarding the electromagnetic compatibility of ultra-high-voltage (UHV) substations. In this paper, the statistical characteristics of TEV at UHV level are collected from field experiments, and are analyzed and compared to those from a repeated strike process. The TEV waveforms during disconnector operations are recorded by a self-developed measurement system first. Then, statistical characteristics, such as the pulse number, duration of pulses, frequency components, magnitude and single pulse duration, are extracted. The transmission line theory is introduced to analyze the TEV and is validated by the experimental results. Finally, the relationship between the TEV and the repeated strike process is analyzed. This proves that the pulse voltage of the TEV is proportional to the corresponding breakdown voltage. The results contribute to the definition of the standard testing waveform of the TEV, and can aid the protection of electronic devices in substations by minimizing the threat of this phenomenon.

A Noise Level Prediction Method Based on Electro-Mechanical Frequency Response Function for Capacitors

PubMed Central

Zhu, Lingyu; Ji, Shengchang; Shen, Qi; Liu, Yuan; Li, Jinyu; Liu, Hao

2013-01-01

The capacitors in high-voltage direct-current (HVDC) converter stations radiate a lot of audible noise which can reach higher than 100 dB. The existing noise level prediction methods are not satisfying enough. In this paper, a new noise level prediction method is proposed based on a frequency response function considering both electrical and mechanical characteristics of capacitors. The electro-mechanical frequency response function (EMFRF) is defined as the frequency domain quotient of the vibration response and the squared capacitor voltage, and it is obtained from impulse current experiment. Under given excitations, the vibration response of the capacitor tank is the product of EMFRF and the square of the given capacitor voltage in frequency domain, and the radiated audible noise is calculated by structure acoustic coupling formulas. The noise level under the same excitations is also measured in laboratory, and the results are compared with the prediction. The comparison proves that the noise prediction method is effective. PMID:24349105

A noise level prediction method based on electro-mechanical frequency response function for capacitors.

PubMed

Zhu, Lingyu; Ji, Shengchang; Shen, Qi; Liu, Yuan; Li, Jinyu; Liu, Hao

2013-01-01

The capacitors in high-voltage direct-current (HVDC) converter stations radiate a lot of audible noise which can reach higher than 100 dB. The existing noise level prediction methods are not satisfying enough. In this paper, a new noise level prediction method is proposed based on a frequency response function considering both electrical and mechanical characteristics of capacitors. The electro-mechanical frequency response function (EMFRF) is defined as the frequency domain quotient of the vibration response and the squared capacitor voltage, and it is obtained from impulse current experiment. Under given excitations, the vibration response of the capacitor tank is the product of EMFRF and the square of the given capacitor voltage in frequency domain, and the radiated audible noise is calculated by structure acoustic coupling formulas. The noise level under the same excitations is also measured in laboratory, and the results are compared with the prediction. The comparison proves that the noise prediction method is effective.

High Voltage Test-Stand Research Done on ICRF Antenna Elements of the High-Harmonic Fast-Wave System of NSTX

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perkins, R. J.; Ahn, J.W.; Bortolon, A.

The twelve-strap high-harmonic fast-wave (HHFW) antenna on NSTX has exhibited a high-voltage standoff around 25 kV during previous experimental campaigns; this standoff needs to be improved for increased power coupling. During the recent NSTX-U upgrade period, a test-stand was set up with two antenna straps along with Faraday screens for testing purposes. Using a diagnostic suite consisting of a fast camera, a residual gas analyzer, a pressure gage, high-voltage probes, and an infrared camera, several interesting discoveries were made, leading to possible improvements of the antenna RF voltage operation level. First, arcing was observed outside the Faraday shields towards themore » low-voltage ("grounded") end of the straps (faraday shield box ends); this arcing was successfully eliminated by installing an additional grounding point between the Faraday shield box and the vessel wall. Second, considerable outgassing was observed during the RF pulse and the amount of outgassing was found to decrease with increasing RF power, possibly indicative of multipacting. Finally, infrared camera measurements of heating on the Faraday shield assembly suggest that the return currents on the Faraday shield box are highly localized at the box sides and possibly account for the pressure increase observed. Computations of these RF currents using Microwave Studio show qualitative agreement with the heated regions. New grounding points between the antenna box and the vessel have been implemented in NSTX-U, where future tests will be done to determine if the high-voltage standoff has improved. Further antenna improvements will be sought through future experiments on the test stand.« less

Fabrication of multijunction high voltage concentrator solar cells by integrated circuit technology

NASA Technical Reports Server (NTRS)

Valco, G. J.; Kapoor, V. J.; Evans, J. C., Jr.; Chai, A.-T.

1981-01-01

Standard integrated circuit technology has been developed for the design and fabrication of planar multijunction (PMJ) solar cell chips. Each 1 cm x 1 cm solar chip consisted of six n(+)/p, back contacted, internally series interconnected unit cells. These high open circuit voltage solar cells were fabricated on 2 ohm-cm, p-type 75 microns thick, silicon substrates. A five photomask level process employing contact photolithography was used to pattern for boron diffusions, phorphorus diffusions, and contact metallization. Fabricated devices demonstrated an open circuit voltage of 3.6 volts and a short circuit current of 90 mA at 80 AMl suns. An equivalent circuit model of the planar multi-junction solar cell was developed.

Design and fabrication of GaAs OMIST photodetector

NASA Astrophysics Data System (ADS)

Kang, Xuejun; Lin, ShiMing; Liao, Qiwei; Gao, Junhua; Liu, Shi'an; Cheng, Peng; Wang, Hongjie; Zhang, Chunhui; Wang, Qiming

1998-08-01

We designed and fabricated GaAs OMIST (Optical-controlled Metal-Insulator-Semiconductor Thyristor) device. Using oxidation of AlAs layer that is grown by MBE forms the Ultra- Thin semi-Insulating layer (UTI) of the GAAS OMIST. The accurate control and formation of high quality semi-insulating layer (AlxOy) are the key processes for fabricating GaAs OMIST. The device exhibits a current-controlled negative resistance region in its I-V characteristics. When illuminated, the major effect of optical excitation is the reduction of the switching voltage. If the GaAs OMIST device is biased at a voltage below its dark switching voltage Vs, sufficient incident light can switch OMIST from high impedance low current 'off' state to low impedance high current 'on' state. The absorbing material of OMIST is GaAS, so if the wavelength of incident light within 600 to approximately 850 nm can be detected effectively. It is suitable to be used as photodetector for digital optical data process. The other attractive features of GaAs OMIST device include suitable conducted current, switching voltage and power levels for OEIC, high switch speed and high sensitivity to light or current injection.

The eGo grid model: An open source approach towards a model of German high and extra-high voltage power grids

NASA Astrophysics Data System (ADS)

Mueller, Ulf Philipp; Wienholt, Lukas; Kleinhans, David; Cussmann, Ilka; Bunke, Wolf-Dieter; Pleßmann, Guido; Wendiggensen, Jochen

2018-02-01

There are several power grid modelling approaches suitable for simulations in the field of power grid planning. The restrictive policies of grid operators, regulators and research institutes concerning their original data and models lead to an increased interest in open source approaches of grid models based on open data. By including all voltage levels between 60 kV (high voltage) and 380kV (extra high voltage), we dissolve the common distinction between transmission and distribution grid in energy system models and utilize a single, integrated model instead. An open data set for primarily Germany, which can be used for non-linear, linear and linear-optimal power flow methods, was developed. This data set consists of an electrically parameterised grid topology as well as allocated generation and demand characteristics for present and future scenarios at high spatial and temporal resolution. The usability of the grid model was demonstrated by the performance of exemplary power flow optimizations. Based on a marginal cost driven power plant dispatch, being subject to grid restrictions, congested power lines were identified. Continuous validation of the model is nescessary in order to reliably model storage and grid expansion in progressing research.

A piezoelectric micro generator worked at low frequency and high acceleration based on PZT and phosphor bronze bonding.

PubMed

Tang, Gang; Yang, Bin; Hou, Cheng; Li, Guimiao; Liu, Jingquan; Chen, Xiang; Yang, Chunsheng

2016-12-08

Recently, piezoelectric energy harvesters (PEHs) have been paid a lot of attention by many researchers to convert mechanical energy into electrical and low level vibration. Currently, most of PEHs worked under high frequency and low level vibration. In this paper, we propose a micro cantilever generator based on the bonding of bulk PZT wafer and phosphor bronze, which is fabricated by MEMS technology, such as mechanical chemical thinning and etching. The experimental results show that the open-circuit output voltage, output power and power density of this fabricated prototype are 35 V, 321 μW and 8664 μW cm -3 at the resonant frequency of 100.8 Hz, respectively, when it matches an optimal loading resistance of 140 kΩ under the excitation of 3.0 g acceleration. The fabricated micro generator can obtain the open-circuit stable output voltage of 61.2 V when the vibration acceleration arrives at 7.0 g. Meanwhile, when this device is pasted on the vibrating vacuum pump, the output voltage is about 11 V. It demonstrates that this novel proposed device can scavenge high vibration level energy at low frequency for powering the inertial sensors in internet of things application.

A piezoelectric micro generator worked at low frequency and high acceleration based on PZT and phosphor bronze bonding

PubMed Central

Tang, Gang; Yang, Bin; Hou, Cheng; Li, Guimiao; Liu, Jingquan; Chen, Xiang; Yang, Chunsheng

2016-01-01

Recently, piezoelectric energy harvesters (PEHs) have been paid a lot of attention by many researchers to convert mechanical energy into electrical and low level vibration. Currently, most of PEHs worked under high frequency and low level vibration. In this paper, we propose a micro cantilever generator based on the bonding of bulk PZT wafer and phosphor bronze, which is fabricated by MEMS technology, such as mechanical chemical thinning and etching. The experimental results show that the open-circuit output voltage, output power and power density of this fabricated prototype are 35 V, 321 μW and 8664 μW cm−3 at the resonant frequency of 100.8 Hz, respectively, when it matches an optimal loading resistance of 140 kΩ under the excitation of 3.0 g acceleration. The fabricated micro generator can obtain the open-circuit stable output voltage of 61.2 V when the vibration acceleration arrives at 7.0 g. Meanwhile, when this device is pasted on the vibrating vacuum pump, the output voltage is about 11 V. It demonstrates that this novel proposed device can scavenge high vibration level energy at low frequency for powering the inertial sensors in internet of things application. PMID:27929139

High Voltage Testing. Volume 2. Specifications and Test Procedures

DTIC Science & Technology

1982-08-01

the greatest impact on the initial assumption and criteria developed in the published criteria documents include: dielectric withstanding voltage...3382-75 Measurement of Energy and Integrated Charge Transfer Due to Partial Discharges (Corona) Using Bridge Techniques. ASTM-D 3426 - Dielectric... Energy (NEMA Publication No. WC 7-1971). NEMA Publication No. 109 - AIEE-EEI-NEMA Standard Basic Insulation Level. 092-57 - Method of Test for Flash and

30 CFR 75.826 - High-voltage trailing cables.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage trailing cables. 75.826 Section 75...-Voltage Longwalls § 75.826 High-voltage trailing cables. High-voltage trailing cables must: (a) Meet existing trailing cable requirements and the approval requirements of the high-voltage continuous mining...

Effect of pulsed corona discharge voltage and feed gas flow rate on dissolved ozone concentration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prasetyaningrum, A., E-mail: ajiprasetyaningrum@gmail.com; Ratnawati,; Jos, B.

Ozonization is one of the methods extensively used for water purification and degradation of organic materials. Ozone (O{sub 3}) is recognized as a powerful oxidizing agent. Due to its strong oxidability and better environmental friendless, ozone increasing being used in domestic and industrial applications. Current technology in ozone production utilizes several techniques (corona discharge, ultra violet radiation and electrolysis). This experiment aimed to evaluating effect of voltage and gas flow rate on ozone production with corona discharge. The system consists of two net-type stainless steel electrode placed in a dielectric barrier. Three pulsed voltage (20, 30, 40 KV) and flowmore » rate (5, 10, 15 L/min) were prepare for operation variable at high frequency (3.7 kHz) with AC pulsed power supply. The dissolved ozone concentration depends on the applied high-voltage level, gas flow rate and the discharge exposure duration. The ozone concentration increases with decreasing gas flow rate. Dissolved ozone concentrations greater than 200 ppm can be obtained with a minimum voltage 40 kV.« less

Transition times between the extremum points of the current–voltage characteristic of a resonant tunneling diode with hysteresis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grishakov, K. S., E-mail: ksgrishakov@yahoo.com; Elesin, V. F.

A numerical solution to the problem of transient processes in a resonant tunneling diode featuring a current–voltage characteristic with hysteresis is found for the first time in the context of a coherent model (based on the coupled Schrödinger and Poisson equations) taking into account the Fermi distribution of electrons. The transitions from the high-current to the low-current state and vice versa, which result from the existence of hysteresis and are of great practical importance for ultrafast switches based on resonant tunneling diodes, are studied in detail. It is shown that the transition times for such processes initiated by the applicationmore » of a small voltage can significantly exceed the characteristic time ℏ/Γ (where G is the width of the resonance level). It is established for the first time that the transition time can be reduced and made as short as the characteristic time ℏ/Γ by applying a sufficiently high voltage. For the parameters of the resonant-tunnelingdiode structure considered in this study, the required voltage is about 0.01 V.« less

Effect of pulsed corona discharge voltage and feed gas flow rate on dissolved ozone concentration

NASA Astrophysics Data System (ADS)

Prasetyaningrum, A.; Ratnawati, Jos, B.

2015-12-01

Ozonization is one of the methods extensively used for water purification and degradation of organic materials. Ozone (O3) is recognized as a powerful oxidizing agent. Due to its strong oxidability and better environmental friendless, ozone increasing being used in domestic and industrial applications. Current technology in ozone production utilizes several techniques (corona discharge, ultra violet radiation and electrolysis). This experiment aimed to evaluating effect of voltage and gas flow rate on ozone production with corona discharge. The system consists of two net-type stainless steel electrode placed in a dielectric barrier. Three pulsed voltage (20, 30, 40 KV) and flow rate (5, 10, 15 L/min) were prepare for operation variable at high frequency (3.7 kHz) with AC pulsed power supply. The dissolved ozone concentration depends on the applied high-voltage level, gas flow rate and the discharge exposure duration. The ozone concentration increases with decreasing gas flow rate. Dissolved ozone concentrations greater than 200 ppm can be obtained with a minimum voltage 40 kV.

Amplifier for measuring low-level signals in the presence of high common mode voltage

NASA Technical Reports Server (NTRS)

Lukens, F. E. (Inventor)

1985-01-01

A high common mode rejection differential amplifier wherein two serially arranged Darlington amplifier stages are employed and any common mode voltage is divided between them by a resistance network. The input to the first Darlington amplifier stage is coupled to a signal input resistor via an amplifier which isolates the input and presents a high impedance across this resistor. The output of the second Darlington stage is transposed in scale via an amplifier stage which has its input a biasing circuit which effects a finite biasing of the two Darlington amplifier stages.

Power Electronic Transformer based Three-Phase PWM AC Drives

NASA Astrophysics Data System (ADS)

Basu, Kaushik

A Transformer is used to provide galvanic isolation and to connect systems at different voltage levels. It is one of the largest and most expensive component in most of the high voltage and high power systems. Its size is inversely proportional to the operating frequency. The central idea behind a power electronic transformer (PET) also known as solid state transformer is to reduce the size of the transformer by increasing the frequency. Power electronic converters are used to change the frequency of operation. Steady reduction in the cost of the semiconductor switches and the advent of advanced magnetic materials with very low loss density and high saturation flux density implies economic viability and feasibility of a design with high power density. Application of PET is in generation of power from renewable energy sources, especially wind and solar. Other important application include grid tied inverters, UPS e.t.c. In this thesis non-resonant, single stage, bi-directional PET is considered. The main objective of this converter is to generate adjustable speed and magnitude pulse width modulated (PWM) ac waveforms from an ac or dc grid with a high frequency ac link. The windings of a high frequency transformer contains leakage inductance. Any switching transition of the power electronic converter connecting the inductive load and the transformer requires commutation of leakage energy. Commutation by passive means results in power loss, decrease in the frequency of operation, distortion in the output voltage waveform, reduction in reliability and power density. In this work a source based partially loss-less commutation of leakage energy has been proposed. This technique also results in partial soft-switching. A series of converters with novel PWM strategies have been proposed to minimize the frequency of leakage inductance commutation. These PETs achieve most of the important features of modern PWM ac drives including 1) Input power factor correction, 2) Common-mode voltage suppression at the load end, 3) High quality output voltage waveform (comparable to conventional space vector PWM modulated two level inverter) and 4) Minimization of output voltage loss, common-mode voltage switching and distortion of the load current waveform due to leakage inductance commutation. All of the proposed topologies along with the proposed control schemes have been analyzed and simulated in MATLABSimulink. A hardware prototype has been fabricated and tested. The simulation and experimental results verify the operation and advantages of the proposed topologies and their control.

11.4% Efficiency non-fullerene polymer solar cells with trialkylsilyl substituted 2D-conjugated polymer as donor

PubMed Central

Bin, Haijun; Gao, Liang; Zhang, Zhi-Guo; Yang, Yankang; Zhang, Yindong; Zhang, Chunfeng; Chen, Shanshan; Xue, Lingwei; Yang, Changduk; Xiao, Min; Li, Yongfang

2016-01-01

Simutaneously high open circuit voltage and high short circuit current density is a big challenge for achieving high efficiency polymer solar cells due to the excitonic nature of organic semdonductors. Herein, we developed a trialkylsilyl substituted 2D-conjugated polymer with the highest occupied molecular orbital level down-shifted by Si–C bond interaction. The polymer solar cells obtained by pairing this polymer with a non-fullerene acceptor demonstrated a high power conversion efficiency of 11.41% with both high open circuit voltage of 0.94 V and high short circuit current density of 17.32 mA cm−2 benefitted from the complementary absorption of the donor and acceptor, and the high hole transfer efficiency from acceptor to donor although the highest occupied molecular orbital level difference between the donor and acceptor is only 0.11 eV. The results indicate that the alkylsilyl substitution is an effective way in designing high performance conjugated polymer photovoltaic materials. PMID:27905397

11.4% Efficiency non-fullerene polymer solar cells with trialkylsilyl substituted 2D-conjugated polymer as donor.

PubMed

Bin, Haijun; Gao, Liang; Zhang, Zhi-Guo; Yang, Yankang; Zhang, Yindong; Zhang, Chunfeng; Chen, Shanshan; Xue, Lingwei; Yang, Changduk; Xiao, Min; Li, Yongfang

2016-12-01

Simutaneously high open circuit voltage and high short circuit current density is a big challenge for achieving high efficiency polymer solar cells due to the excitonic nature of organic semdonductors. Herein, we developed a trialkylsilyl substituted 2D-conjugated polymer with the highest occupied molecular orbital level down-shifted by Si-C bond interaction. The polymer solar cells obtained by pairing this polymer with a non-fullerene acceptor demonstrated a high power conversion efficiency of 11.41% with both high open circuit voltage of 0.94 V and high short circuit current density of 17.32 mA cm -2 benefitted from the complementary absorption of the donor and acceptor, and the high hole transfer efficiency from acceptor to donor although the highest occupied molecular orbital level difference between the donor and acceptor is only 0.11 eV. The results indicate that the alkylsilyl substitution is an effective way in designing high performance conjugated polymer photovoltaic materials.

Powerplexer

NASA Technical Reports Server (NTRS)

Woods, J. M. (Inventor)

1973-01-01

An electrical power distribution system is described for use in providing different dc voltage levels. A circuit is supplied with DC voltage levels and commutates pulses for timed intervals onto a pair of distribution wires. The circuit is driven by a command generator which places pulses on the wires in a timed sequence. The pair of wires extend to voltage strippers connected to the various loads. The voltage strippers each respond to the pulse dc levels on the pair of wires and form different output voltages communicated to each load.

Modeling the instability behavior of thin film devices: Fermi Level Pinning

NASA Astrophysics Data System (ADS)

Moeini, Iman; Ahmadpour, Mohammad; Gorji, Nima E.

2018-05-01

We investigate the underlying physics of degradation/recovery of a metal/n-CdTe Schottcky junction under reverse or forward bias stressing conditions. We used Sah-Noyce-Shockley (SNS) theory to investigate if the swept of Fermi level pinning at different levels (under forward/reverse bias) is the origin of change in current-voltage characteristics of the device. This theory is based on Shockley-Read-Hall recombination within the depletion width and takes into account the interface defect levels. Fermi Level Pinning theory was primarily introduced by Ponpon and developed to thin film solar cells by Dharmadasa's group in Sheffield University-UK. The theory suggests that Fermi level pinning at multiple levels occurs due to high concentration of electron-traps or acceptor-like defects at the interface of a Schottky or pn junction and this re-arranges the recombination rate and charage collection. Shift of these levels under stress conditions determines the change in current-voltage characteristics of the cell. This theory was suggested for several device such as metal/n-CdTe, CdS/CdTe, CIGS/CdS or even GaAs solar cells without a modeling approach to clearly explain it's physics. We have applied the strong SNS modeling approach to shed light on Fermi Level Pinning theory. The modeling confirms that change in position of Fermi Level and it's pining in a lower level close to Valence band increases the recombination and reduces the open-circuit voltage. In contrast, Fermi Level pinning close to conduction band strengthens the electric field at the junction which amplifies the carrier collection and boosts the open-circuit voltage. This theory can well explain the stress effect on device characteristics of various solar cells or Schottky junctions by simply finding the right Fermi level pinning position at every specific stress condition.

Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions.

PubMed

He, Weifan; Sun, Huajun; Zhou, Yaxiong; Lu, Ke; Xue, Kanhao; Miao, Xiangshui

2017-08-30

The memristor is a promising candidate for the next generation non-volatile memory, especially based on HfO 2-x , given its compatibility with advanced CMOS technologies. Although various resistive transitions were reported independently, customized binary and multi-level memristors in unified HfO 2-x material have not been studied. Here we report Pt/HfO 2-x /Ti memristors with double memristive modes, forming-free and low operation voltage, which were tuned by oxidation conditions of HfO 2-x films. As O/Hf ratios of HfO 2-x films increase, the forming voltages, SET voltages, and R off /R on windows increase regularly while their resistive transitions undergo from gradually to sharply in I/V sweep. Two memristors with typical resistive transitions were studied to customize binary and multi-level memristive modes, respectively. For binary mode, high-speed switching with 10 3 pulses (10 ns) and retention test at 85 °C (>10 4 s) were achieved. For multi-level mode, the 12-levels stable resistance states were confirmed by ongoing multi-window switching (ranging from 10 ns to 1 μs and completing 10 cycles of each pulse). Our customized binary and multi-level HfO 2-x -based memristors show high-speed switching, multi-level storage and excellent stability, which can be separately applied to logic computing and neuromorphic computing, further suitable for in-memory computing chip when deposition atmosphere may be fine-tuned.

Electrostatic separation for recycling silver, silicon and polyethylene terephthalate from waste photovoltaic cells

NASA Astrophysics Data System (ADS)

Zhang, Zisheng; Sun, Bo; Yang, Jie; Wei, Yusheng; He, Shoujie

2017-04-01

Electrostatic separation technology has been proven to be an effective and environmentally friendly way of recycling electronic waste. In this study, this technology was applied to recycle waste solar panels. Mixed particles of silver and polyethylene terephthalate, silicon and polyethylene terephthalate, and silver and silicon were separated with a single-roll-type electrostatic separator. The influence of high voltage level, roll speed, radial position corona electrode and angular position of the corona electrode on the separation efficiency was studied. The experimental data showed that separation of silver/polyethylene terephthalate and silicon/polyethylene terephthalate needed a higher voltage level, while separation of silver and silicon needed a smaller angular position for the corona electrode and a higher roll speed. The change of the high voltage level, roll speed, radial position of the corona electrode, and angular position of the corona electrode has more influence on silicon separation efficiency than silver separation efficiency. An integrated process is proposed using a two-roll-type corona separator for multistage separation of a mixture of these three materials. The separation efficiency for silver and silicon were found to reach 96% and 98%, respectively.

Evaluation of the shock-wave pattern for endoscopic electrohydraulic lithotripsy.

PubMed

Vorreuther, R; Engelmann, Y

1995-01-01

We evaluated the electrical events and the resulting shock waves of the spark discharge for electrohydraulic lithotripsy at the tip of a 3.3F probe. Spark generation was achieved by variable combinations of voltage and capacity. The effective electrical output was determined by means of a high-voltage probe, a current coil, and a digital oscilloscope. Peak pressures, rise times, and pulse width of the pressure profiles were recorded using a polyvinylidene difluoride needle hydrophone in 0.9% NaCl solution at a distance of 10 mm. The peak pressure and the slope of the shock front depend solely on the voltage, while the pulse width was correlated with the capacity. Pulses of less than 1-microsecond duration can be obtained when low capacity is applied and the inductivity of the cables and plugs is kept at a low level. Using chalk as a stone model it was proven that short pulses of high peak pressure provided by a low capacity and a high voltage have a greater impact on fragmentation than the corresponding broader shock waves of lower peak pressure carrying the same energy.

Comparison of high-voltage ac and pulsed operation of a surface dielectric barrier discharge

NASA Astrophysics Data System (ADS)

Williamson, James M.; Trump, Darryl D.; Bletzinger, Peter; Ganguly, Biswa N.

2006-10-01

A surface dielectric barrier discharge (DBD) in atmospheric pressure air was excited either by low frequency (0.3-2 kHz) high-voltage ac or by short, high-voltage pulses at repetition rates from 50 to 600 pulses s-1. The short-pulse excited discharge was more diffuse and did not have the pronounced bright multiple cathode spots observed in the ac excited discharge. The discharge voltage, current and average power deposited into the discharge were calculated for both types of excitation. As a measure of plasma-chemical efficiency, the ozone number density was measured by UV absorption as a function of average deposited power. The density of ozone produced by ac excitation did not increase so rapidly as that produced by short-pulse excitation as a function of average power, with a maximum measured density of ~3 × 1015 cm-3 at 25 W. The maximum ozone production achieved by short-pulse excitation was ~8.5 × 1015 cm-3 at 20 W, which was four times greater than that achieved by ac excitation at the same power level.

In situ heating to detoxify organic-contaminated soils

DOEpatents

Buelt, James L.; Oma, Kenton H.

1990-01-01

A method and apparatus for decontaminating ground areas where toxic chemicals are buried comprises disposition of a plurality of spaced electrodes in the ground to be treated and application of a voltage across the electrodes for bringing about current flow through the ground. Power delivered to the ground volatilizes the chemicals which are collected and directed to a gas treatment system. The preferred form of the invention employs high voltage arc discharge between the electrodes for heating a ground region to relatively high temperatures at relatively low power levels.

High-performance, low-operating voltage, and solution-processable organic field-effect transistor with silk fibroin as the gate dielectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Leilei; Xu, Xinjun, E-mail: xuxj@mater.ustb.edu.cn, E-mail: lidong@mater.ustb.edu.cn; Ma, Mingchao

2014-01-13

We report the use of silk fibroin as the gate dielectric material in solution-processed organic field-effect transistors (OFETs) with poly(3-hexylthiophene) (P3HT) as the semiconducting layer. Such OFETs exhibit a low threshold of −0.77 V and a low-operating voltage (0 to −3 V) compatible with the voltage level commonly-used in current electronic industry. The carrier mobility of such OFETs is as high as 0.21 cm{sup 2} V{sup −1} s{sup −1} in the saturation regime, comparable to the best value of P3HT-based OFETs with dielectric layer that is not solution-processed. The high-performance of this kind of OFET is related with the high contentmore » of β strands in fibroin dielectric which leads to an array of fibers in a highly ordered structure, thus reducing the trapping sites at the semiconductor/dielectric interface.« less

SABRE modification to a higher voltage high impedance inductive voltage adder (IVA)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mazarakis, M.G.; Smith, D.L.; Poukey, J.W.

The SABRE accelerator was originally designed to operate as low impedance voltage adder with 40-ohm maximum output impedance in negative polarity operation and approximately 20 ohm in positive polarity. Because of the low impedance and higher than expected energy losses in the pulse forming network, the operating input cavity voltage is of the order of 800 kV which limits the total output voltage to {approximately} 8 MV for negative polarity and 5 to 6 MV for positive polarity. The modifications presented here aim to increase the output voltage in both polarities. A new high impedance central electrode was designed capablemore » of operating both in negative and positive polarities, and the number of pulse forming lines feeding the inductively isolated cavities was reduced to half. These modifications were recently tested in positive polarity. An increase in the total accelerating voltage from 5.5 MV to 9 MV was observed while stressing all components to the level required to achieve 12 MV in negative polarity. In these experiments only 65% of the usual operating intermediate store capacitor voltage was necessary (1.7 MV instead of 2.6 MV). Currently, the device is reconfigured for negative polarity tests. The cavities are rotated by 180{degree} and a 17-inch spool is added at the base of the cantilevered center electrode (cathode electrode). Positive and negative polarity results are presented and compared with simulations.« less

A compact, low jitter, nanosecond rise time, high voltage pulse generator with variable amplitude.

PubMed

Mao, Jiubing; Wang, Xin; Tang, Dan; Lv, Huayi; Li, Chengxin; Shao, Yanhua; Qin, Lan

2012-07-01

In this paper, a compact, low jitter, nanosecond rise time, command triggered, high peak power, gas-switch pulse generator system is developed for high energy physics experiment. The main components of the system are a high voltage capacitor, the spark gap switch and R = 50 Ω load resistance built into a structure to obtain a fast high power pulse. The pulse drive unit, comprised of a vacuum planar triode and a stack of avalanche transistors, is command triggered by a single or multiple TTL (transistor-transistor logic) level pulses generated by a trigger pulse control unit implemented using the 555 timer circuit. The control unit also accepts user input TTL trigger signal. The vacuum planar triode in the pulse driving unit that close the first stage switches is applied to drive the spark gap reducing jitter. By adjusting the charge voltage of a high voltage capacitor charging power supply, the pulse amplitude varies from 5 kV to 10 kV, with a rise time of <3 ns and the maximum peak current up to 200 A (into 50 Ω). The jitter of the pulse generator system is less than 1 ns. The maximum pulse repetition rate is set at 10 Hz that limited only by the gas-switch and available capacitor recovery time.

Insulation Requirements of High-Voltage Power Systems in Future Spacecraft

NASA Technical Reports Server (NTRS)

Qureshi, A. Haq; Dayton, James A., Jr.

1995-01-01

The scope, size, and capability of the nation's space-based activities are limited by the level of electrical power available. Long-term projections show that there will be an increasing demand for electrical power in future spacecraft programs. The level of power that can be generated, conditioned, transmitted, and used will have to be considerably increased to satisfy these needs, and increased power levels will require that transmission voltages also be increased to minimize weight and resistive losses. At these projected voltages, power systems will not operate satisfactorily without the proper electrical insulation. Open or encapsulated power supplies are currently used to keep the volume and weight of space power systems low and to protect them from natural and induced environmental hazards. Circuits with open packaging are free to attain the pressure of the outer environment, whereas encapsulated circuits are imbedded in insulating materials, which are usually solids, but could be liquids or gases. Up to now, solid insulation has usually been chosen for space power systems. If the use of solid insulation is continued, when voltages increase, the amount of insulation for encapsulation also will have to increase. This increased insulation will increase weight and reduce system reliability. Therefore, non-solid insulation media must be examined to satisfy future spacecraft power and voltage demands. In this report, we assess the suitability of liquid, space vacuum, and gas insulation for space power systems.

Apparatus for in situ heating and vitrification

DOEpatents

Buelt, James L.; Oma, Kenton H.; Eschbach, Eugene A.

1994-01-01

An apparatus for decontaminating ground areas where toxic chemicals are buried includes a plurality of spaced electrodes located in the ground and to which a voltage is applied for bringing about current flow. Power delivered to the ground volatilizes the chemicals that are then collected and directed to a gas treatment system. A preferred form of the invention employs high voltage arc discharge between the electrodes for heating a ground region to relatively high temperatures at relatively low power levels. Electrodes according to the present invention are provided with preferentially active lower portions between which current flows for the purpose of soil heating or for soil melting and vitrification. Promoting current flow below ground level avoids predominantly superficial treatment and increases electrode life.

Apparatus for in situ heating and vitrification

DOEpatents

Buelt, J.L.; Oma, K.H.; Eschbach, E.A.

1994-05-31

An apparatus for decontaminating ground areas where toxic chemicals are buried includes a plurality of spaced electrodes located in the ground and to which a voltage is applied for bringing about current flow. Power delivered to the ground volatilizes the chemicals that are then collected and directed to a gas treatment system. A preferred form of the invention employs high voltage arc discharge between the electrodes for heating a ground region to relatively high temperatures at relatively low power levels. Electrodes according to the present invention are provided with preferentially active lower portions between which current flows for the purpose of soil heating or for soil melting and vitrification. Promoting current flow below ground level avoids predominantly superficial treatment and increases electrode life. 15 figs.

30 CFR 77.800 - High-voltage circuits; circuit breakers.

Code of Federal Regulations, 2010 CFR

2010-07-01

... devices to provide protection against under voltage, grounded phase, short circuit and overcurrent. High... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 77.800... COAL MINES Surface High-Voltage Distribution § 77.800 High-voltage circuits; circuit breakers. High...

Precision linear ramp function generator

DOEpatents

Jatko, W.B.; McNeilly, D.R.; Thacker, L.H.

1984-08-01

A ramp function generator is provided which produces a precise linear ramp function which is repeatable and highly stable. A derivative feedback loop is used to stabilize the output of an integrator in the forward loop and control the ramp rate. The ramp may be started from a selected baseline voltage level and the desired ramp rate is selected by applying an appropriate constant voltage to the input of the integrator.

Precision linear ramp function generator

DOEpatents

Jatko, W. Bruce; McNeilly, David R.; Thacker, Louis H.

1986-01-01

A ramp function generator is provided which produces a precise linear ramp unction which is repeatable and highly stable. A derivative feedback loop is used to stabilize the output of an integrator in the forward loop and control the ramp rate. The ramp may be started from a selected baseline voltage level and the desired ramp rate is selected by applying an appropriate constant voltage to the input of the integrator.

Improved Transient and Steady-State Performances of Series Resonant ZCS High-Frequency Inverter-Coupled Voltage Multiplier Converter with Dual Mode PFM Control Scheme

NASA Astrophysics Data System (ADS)

Chu, Enhui; Gamage, Laknath; Ishitobi, Manabu; Hiraki, Eiji; Nakaoka, Mutsuo

The A variety of switched-mode high voltage DC power supplies using voltage-fed type or current-fed type high-frequency transformer resonant inverters using MOS gate bipolar power transistors; IGBTs have been recently developed so far for a medical-use X-ray high power generator. In general, the high voltage high power X-ray generator using voltage-fed high frequency inverter with a high voltage transformer link has to meet some performances such as (i) short rising period in start transient of X-ray tube voltage (ii) no overshoot transient response in tube voltage, (iii) minimized voltage ripple in periodic steady-state under extremely wide load variations and filament heater current fluctuation conditions of the X-ray tube. This paper presents two lossless inductor snubber-assisted series resonant zero current soft switching high-frequency inverter using a diode-capacitor ladder type voltage multiplier called Cockcroft-Walton circuit, which is effectively implemented for a high DC voltage X-ray power generator. This DC high voltage generator which incorporates pulse frequency modulated series resonant inverter using IGBT power module packages is based on the operation principle of zero current soft switching commutation scheme under discontinuous resonant current and continuous resonant current transition modes. This series capacitor compensated for transformer resonant power converter with a high frequency transformer linked voltage boost multiplier can efficiently work a novel selectively-changed dual mode PFM control scheme in order to improve the start transient and steady-state response characteristics and can completely achieve stable zero current soft switching commutation tube filament current dependent for wide load parameter setting values with the aid of two lossless inductor snubbers. It is proved on the basis of simulation and experimental results in which a simple and low cost control implementation based on selectively-changed dual-mode PFM for high-voltage X-ray DC-DC power converter with a voltage multiplier strategy has some specified voltage pattern tracking voltage response performances under rapid rising time and no overshoot in start transient tube voltage as well as the minimized steady-state voltage ripple in tube voltage.

Low power, scalable multichannel high voltage controller

DOEpatents

Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX

2006-03-14

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

Low power, scalable multichannel high voltage controller

DOEpatents

Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX

2008-03-25

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

30 CFR 77.810 - High-voltage equipment; grounding.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage equipment; grounding. 77.810... COAL MINES Surface High-Voltage Distribution § 77.810 High-voltage equipment; grounding. Frames, supporting structures, and enclosures of stationary, portable, or mobile high-voltage equipment shall be...

Electron bunch structure in energy recovery linac with high-voltage dc photoelectron gun

NASA Astrophysics Data System (ADS)

Saveliev, Y. M.; Jackson, F.; Jones, J. K.; McKenzie, J. W.

2016-09-01

The internal structure of electron bunches generated in an injector line with a dc photoelectron gun is investigated. Experiments were conducted on the ALICE (accelerators and lasers in combined experiments) energy recovery linac at Daresbury Laboratory. At a relatively low dc gun voltage of 230 kV, the bunch normally consisted of two beamlets with different electron energies, as well as transverse and longitudinal characteristics. The beamlets are formed at the head and the tail of the bunch. At a higher gun voltage of 325 kV, the beam substructure is much less pronounced and could be observed only at nonoptimal injector settings. Experiments and computer simulations demonstrated that the bunch structure develops during the initial beam acceleration in the superconducting rf booster cavity and can be alleviated either by increasing the gun voltage to the highest possible level or by controlling the beam acceleration from the gun voltage in the first accelerating structure.

Voltage Based Detection Method for High Impedance Fault in a Distribution System

NASA Astrophysics Data System (ADS)

Thomas, Mini Shaji; Bhaskar, Namrata; Prakash, Anupama

2016-09-01

High-impedance faults (HIFs) on distribution feeders cannot be detected by conventional protection schemes, as HIFs are characterized by their low fault current level and waveform distortion due to the nonlinearity of the ground return path. This paper proposes a method to identify the HIFs in distribution system and isolate the faulty section, to reduce downtime. This method is based on voltage measurements along the distribution feeder and utilizes the sequence components of the voltages. Three models of high impedance faults have been considered and source side and load side breaking of the conductor have been studied in this work to capture a wide range of scenarios. The effect of neutral grounding of the source side transformer is also accounted in this study. The results show that the algorithm detects the HIFs accurately and rapidly. Thus, the faulty section can be isolated and service can be restored to the rest of the consumers.

Forward voltage short-pulse technique for measuring high power laser array junction temperature

NASA Technical Reports Server (NTRS)

Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

2012-01-01

The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators

PubMed

Dimitrakopoulos; Purushothaman; Kymissis; Callegari; Shaw

1999-02-05

The gate bias dependence of the field-effect mobility in pentacene-based insulated gate field-effect transistors (IGFETs) was interpreted on the basis of the interaction of charge carriers with localized trap levels in the band gap. This understanding was used to design and fabricate IGFETs with mobility of more than 0.3 square centimeter per volt per second and current modulation of 10(5), with the use of amorphous metal oxide gate insulators. These values were obtained at operating voltage ranges as low as 5 volts, which are much smaller than previously reported results. An all-room-temperature fabrication process sequence was used, which enabled the demonstration of high-performance organic IGFETs on transparent plastic substrates, at low operating voltages for organic devices.

Field-induced strain degradation of AlGaN/GaN high electron mobility transistors on a nanometer scale

NASA Astrophysics Data System (ADS)

Lin, Chung-Han; Doutt, D. R.; Mishra, U. K.; Merz, T. A.; Brillson, L. J.

2010-11-01

Nanoscale Kelvin probe force microscopy and depth-resolved cathodoluminescence spectroscopy reveal an electronic defect evolution inside operating AlGaN/GaN high electron mobility transistors with degradation under electric-field-induced stress. Off-state electrical stress results in micron-scale areas within the extrinsic drain expanding and decreasing in electric potential, midgap defects increasing by orders-of-magnitude at the AlGaN layer, and local Fermi levels lowering as gate-drain voltages increase above a characteristic stress threshold. The pronounced onset of defect formation, Fermi level movement, and transistor degradation at the threshold gate-drain voltage of J. A. del Alamo and J. Joh [Microelectron. Reliab. 49, 1200 (2009)] is consistent with crystal deformation and supports the inverse piezoelectric model of high electron mobility transistor degradation.

Modular high voltage power supply for chemical analysis

DOEpatents

Stamps, James F [Livermore, CA; Yee, Daniel D [Dublin, CA

2007-01-09

A high voltage power supply for use in a system such as a microfluidics system, uses a DC--DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC--DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

Modular high voltage power supply for chemical analysis

DOEpatents

Stamps, James F [Livermore, CA; Yee, Daniel D [Dublin, CA

2010-05-04

A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

Modular high voltage power supply for chemical analysis

DOEpatents

Stamps, James F [Livermore, CA; Yee, Daniel D [Dublin, CA

2008-07-15

A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

Wireless power charging using point of load controlled high frequency power converters

DOEpatents

Miller, John M.; Campbell, Steven L.; Chambon, Paul H.; Seiber, Larry E.; White, Clifford P.

2015-10-13

An apparatus for wirelessly charging a battery of an electric vehicle is provided with a point of load control. The apparatus includes a base unit for generating a direct current (DC) voltage. The base unit is regulated by a power level controller. One or more point of load converters can be connected to the base unit by a conductor, with each point of load converter comprising a control signal generator that transmits a signal to the power level controller. The output power level of the DC voltage provided by the base unit is controlled by power level controller such that the power level is sufficient to power all active load converters when commanded to do so by any of the active controllers, without generating excessive power that may be otherwise wasted.

Simple Cell Balance Circuit

NASA Technical Reports Server (NTRS)

Johnson, Steven D.; Byers, Jerry W.; Martin, James A.

2012-01-01

A method has been developed for continuous cell voltage balancing for rechargeable batteries (e.g. lithium ion batteries). A resistor divider chain is provided that generates a set of voltages representing the ideal cell voltage (the voltage of each cell should be as if the cells were perfectly balanced). An operational amplifier circuit with an added current buffer stage generates the ideal voltage with a very high degree of accuracy, using the concept of negative feedback. The ideal voltages are each connected to the corresponding cell through a current- limiting resistance. Over time, having the cell connected to the ideal voltage provides a balancing current that moves the cell voltage very close to that ideal level. In effect, it adjusts the current of each cell during charging, discharging, and standby periods to force the cell voltages to be equal to the ideal voltages generated by the resistor divider. The device also includes solid-state switches that disconnect the circuit from the battery so that it will not discharge the battery during storage. This solution requires relatively few parts and is, therefore, of lower cost and of increased reliability due to the fewer failure modes. Additionally, this design uses very little power. A preliminary model predicts a power usage of 0.18 W for an 8-cell battery. This approach is applicable to a wide range of battery capacities and voltages.

Design of an Auto-zeroed, Differential, Organic Thin-film Field-effect Transistor Amplifier for Sensor Applications

NASA Technical Reports Server (NTRS)

Binkley, David M.; Verma, Nikhil; Crawford, Robert L.; Brandon, Erik; Jackson, Thomas N.

2004-01-01

Organic strain gauge and other sensors require high-gain, precision dc amplification to process their low-level output signals. Ideally, amplifiers would be fabricated using organic thin-film field-effect transistors (OTFT's) adjacent to the sensors. However, OTFT amplifiers exhibit low gain and high input-referred dc offsets that must be effectively managed. This paper presents a four-stage, cascaded differential OTFT amplifier utilizing switched capacitor auto-zeroing. Each stage provides a nominal voltage gain of four through a differential pair driving low-impedance active loads, which provide common-mode output voltage control. p-type pentacence OTFT's are used for the amplifier devices and auto-zero switches. Simulations indicate the amplifier provides a nominal voltage gain of 280 V/V and effectively amplifies a 1-mV dc signal in the presence of 500-mV amplifier input-referred dc offset voltages. Future work could include the addition of digital gain calibration and offset correction of residual offsets associated with charge injection imbalance in the differential circuits.

30 CFR 77.804 - High-voltage trailing cables; minimum design requirements.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage trailing cables; minimum design... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.804 High-voltage trailing cables; minimum design requirements. (a) High-voltage trailing cables used in resistance grounded systems shall be...

30 CFR 75.833 - Handling high-voltage trailing cables.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Handling high-voltage trailing cables. 75.833... High-Voltage Longwalls § 75.833 Handling high-voltage trailing cables. (a) Cable handling. (1) Miners must not handle energized trailing cables unless they are wearing high-voltage insulating gloves, which...

30 CFR 77.804 - High-voltage trailing cables; minimum design requirements.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false High-voltage trailing cables; minimum design... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.804 High-voltage trailing cables; minimum design requirements. (a) High-voltage trailing cables used in resistance grounded systems shall be...

30 CFR 77.804 - High-voltage trailing cables; minimum design requirements.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false High-voltage trailing cables; minimum design... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.804 High-voltage trailing cables; minimum design requirements. (a) High-voltage trailing cables used in resistance grounded systems shall be...

30 CFR 77.804 - High-voltage trailing cables; minimum design requirements.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false High-voltage trailing cables; minimum design... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.804 High-voltage trailing cables; minimum design requirements. (a) High-voltage trailing cables used in resistance grounded systems shall be...

High Power Amplifier and Power Supply

NASA Technical Reports Server (NTRS)

Duong, Johnny; Stride, Scot; Harvey, Wayne; Haque, Inam; Packard, Newton; Ng, Quintin; Ispirian, Julie Y.; Waian, Christopher; Janes, Drew

2008-01-01

A document discusses the creation of a high-voltage power supply (HVPS) that is able to contain voltages up to -20 kV, keep electrical field strengths to below 200 V/mil (approximately equal to 7.87 kV/mm), and can provide a 200-nanosecond rise/fall time focus modulator swinging between cathode potential of 16.3 kV and -19.3 kV. This HVPS can protect the 95-GHz, pulsed extended interaction klystron (EIK) from arcs/discharges from all sources, including those from within the EIK fs vacuum envelope. This innovation has a multi-winding pulse transformer design, which uses new winding techniques to provide the same delays and rise/fall times (less than 10 nanoseconds) at different potential levels ranging from -20 kV to -16 kV. Another feature involves a high-voltage printed-wiring board that was corona-free at -20 kV DC with a 3- kV AC swing. The corona-free multilayer high-voltage board is used to simulate fields of less than 200 V/mil (approximately equal to 7.87 kV/mm) at 20 kV DC. Drive techniques for the modulator FETs (field-effect transistors) (four to 10 in a series) were created to change states (3,000-V swing) without abrupt steps, while still maintaining required delays and transition times. The packing scheme includes a potting mold to house a ten-stage modulator in the space that, in the past, only housed a four-stage modulator. Problems keeping heat down were solved using aluminum oxide substrate in the high-voltage section to limit temperature rise to less than 10 while withstanding -20 kV DC voltage and remaining corona-free.

Solution-Processed Phosphorescent Organic Light-Emitting Diodes with Ultralow Driving Voltage and Very High Power Efficiency

NASA Astrophysics Data System (ADS)

Wang, Shumeng; Wang, Xingdong; Yao, Bing; Zhang, Baohua; Ding, Junqiao; Xie, Zhiyuan; Wang, Lixiang

2015-07-01

To realize power efficient solution-processed phosphorescent organic light-emitting diodes (s-PhOLEDs), the corresponding high driving voltage issue should be well solved. To solve it, efforts have been devoted to the exploitation of novel host or interfacial materials. However, the issues of charge trapping of phosphor and/or charge injection barrier are still serious, largely restraining the power efficiency (PE) levels. Herein, with the utilization of an exciplex-forming couple 4, 4‧, 4″ -tris[3-methylphenyl(phenyl)amino]triphenylamine (m-MTDATA) and 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene (TmPyPB), the efficient charge injection and transporting, barrier-free hole-electron recombination for the formation of the interfacial exciplex, and elimination of charge traps of phosphors in the emissive layer are realized simultaneously, resulting in a turn-on voltage of 2.36 V, a record high PE of 97.2 lm W-1, as well as extremely low driving voltage of 2.60 V at 100 cd m-2, 3.03 V at 1000 cd m-2 and 4.08 V at 10000 cd m-2. This report is the first time that the PE performance of s-PhOLED approaches 100 lm W-1 high level, even superior to the corresponding state-of-the-art performance of the same color vacuum-deposited PhOLED (v-PhOLED) counterpart. We anticipate this report opens a new avenue for achieving power efficient monochromatic and white s-PhOLEDs with simple structures.

Solution-Processed Phosphorescent Organic Light-Emitting Diodes with Ultralow Driving Voltage and Very High Power Efficiency

PubMed Central

Wang, Shumeng; Wang, Xingdong; Yao, Bing; Zhang, Baohua; Ding, Junqiao; Xie, Zhiyuan; Wang, Lixiang

2015-01-01

To realize power efficient solution-processed phosphorescent organic light-emitting diodes (s-PhOLEDs), the corresponding high driving voltage issue should be well solved. To solve it, efforts have been devoted to the exploitation of novel host or interfacial materials. However, the issues of charge trapping of phosphor and/or charge injection barrier are still serious, largely restraining the power efficiency (PE) levels. Herein, with the utilization of an exciplex-forming couple 4, 4′, 4″ -tris[3-methylphenyl(phenyl)amino]triphenylamine (m-MTDATA) and 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene (TmPyPB), the efficient charge injection and transporting, barrier-free hole-electron recombination for the formation of the interfacial exciplex, and elimination of charge traps of phosphors in the emissive layer are realized simultaneously, resulting in a turn-on voltage of 2.36 V, a record high PE of 97.2 lm W−1, as well as extremely low driving voltage of 2.60 V at 100 cd m−2, 3.03 V at 1000 cd m−2 and 4.08 V at 10000 cd m−2. This report is the first time that the PE performance of s-PhOLED approaches 100 lm W−1 high level, even superior to the corresponding state-of-the-art performance of the same color vacuum-deposited PhOLED (v-PhOLED) counterpart. We anticipate this report opens a new avenue for achieving power efficient monochromatic and white s-PhOLEDs with simple structures. PMID:26204810

Solution-Processed Phosphorescent Organic Light-Emitting Diodes with Ultralow Driving Voltage and Very High Power Efficiency.

PubMed

Wang, Shumeng; Wang, Xingdong; Yao, Bing; Zhang, Baohua; Ding, Junqiao; Xie, Zhiyuan; Wang, Lixiang

2015-07-24

To realize power efficient solution-processed phosphorescent organic light-emitting diodes (s-PhOLEDs), the corresponding high driving voltage issue should be well solved. To solve it, efforts have been devoted to the exploitation of novel host or interfacial materials. However, the issues of charge trapping of phosphor and/or charge injection barrier are still serious, largely restraining the power efficiency (PE) levels. Herein, with the utilization of an exciplex-forming couple 4, 4', 4″-tris[3-methylphenyl(phenyl)amino]triphenylamine (m-MTDATA) and 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene (TmPyPB), the efficient charge injection and transporting, barrier-free hole-electron recombination for the formation of the interfacial exciplex, and elimination of charge traps of phosphors in the emissive layer are realized simultaneously, resulting in a turn-on voltage of 2.36 V, a record high PE of 97.2 lm W(-1), as well as extremely low driving voltage of 2.60 V at 100 cd m(-2), 3.03 V at 1000 cd m(-2) and 4.08 V at 10000 cd m(-2). This report is the first time that the PE performance of s-PhOLED approaches 100 lm W(-1) high level, even superior to the corresponding state-of-the-art performance of the same color vacuum-deposited PhOLED (v-PhOLED) counterpart. We anticipate this report opens a new avenue for achieving power efficient monochromatic and white s-PhOLEDs with simple structures.

Addressable multi-nozzle electrohydrodynamic jet printing with high consistency by multi-level voltage method

NASA Astrophysics Data System (ADS)

Pan, Yanqiao; Huang, YongAn; Guo, Lei; Ding, Yajiang; Yin, Zhouping

2015-04-01

It is critical and challenging to achieve the individual jetting ability and high consistency in multi-nozzle electrohydrodynamic jet printing (E-jet printing). We proposed multi-level voltage method (MVM) to implement the addressable E-jet printing using multiple parallel nozzles with high consistency. The fabricated multi-nozzle printhead for MVM consists of three parts: PMMA holder, stainless steel capillaries (27G, outer diameter 400 μm) and FR-4 extractor layer. The key of MVM is to control the maximum meniscus electric field on each nozzle. The individual jetting control can be implemented when the rings under the jetting nozzles are 0 kV and the other rings are 0.5 kV. The onset electric field for each nozzle is ˜3.4 kV/mm by numerical simulation. Furthermore, a series of printing experiments are performed to show the advantage of MVM in printing consistency than the "one-voltage method" and "improved E-jet method", by combination with finite element analyses. The good dimension consistency (274μm, 276μm, 280μm) and position consistency of the droplet array on the hydrophobic Si substrate verified the enhancements. It shows that MVM is an effective technique to implement the addressable E-jet printing with multiple parallel nozzles in high consistency.

Control of Analyte Electrolysis in Electrospray Ionization Mass Spectrometry Using Repetitively Pulsed High Voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kertesz, Vilmos; Van Berkel, Gary J

2011-01-01

Analyte electrolysis using a repetitively pulsed high voltage ion source was investigated and compared to that using a regular, continuously operating direct current high voltage ion source in electrospray ionization mass spectrometry. The extent of analyte electrolysis was explored as a function of the length and frequency of the high voltage pulse using the model compound reserpine in positive ion mode. Using +5 kV as the maximum high voltage amplitude, reserpine was oxidized to its 2, 4, 6 and 8-electron oxidation products when direct current high voltage was employed. In contrast, when using a pulsed high voltage, oxidation of reserpinemore » was eliminated by employing the appropriate high voltage pulse length and frequency. This effect was caused by inefficient mass transport of the analyte to the electrode surface during the duration of the high voltage pulse and the subsequent relaxation of the emitter electrode/ electrolyte interface during the time period when the high voltage was turned off. This mode of ESI source operation allows for analyte electrolysis to be quickly and simply switched on or off electronically via a change in voltage pulse variables.« less

Design and Development of a Series Switch for High Voltage in RF Heating

NASA Astrophysics Data System (ADS)

Patel, Himanshu K.; Shah, Deep; Thacker, Mauli; Shah, Atman

2013-02-01

Plasma is the fourth state of matter. To sustain plasma in its ionic form very high temperature is essential. RF heating systems are used to provide the required temperature. Arching phenomenon in these systems can cause enormous damage to the RF tube. Heavy current flows across the anode-cathode junction, which need to be suppressed in minimal time for its protection. Fast-switching circuit breakers are used to cut-off the load from the supply in cases of arching. The crowbar interrupts the connection between the high voltage power supply (HVPS) and the RF tube for a temporary period between which the series switch has to open. The crowbar shunts the current across the load but in the process leads to short circuiting the HVPS. Thus, to protect the load as well as the HVPS a series switch is necessary. This paper presents the design and development of high voltage Series Switch for the high power switching applications. Fiber optic based Optimum triggering scheme is designed and tested to restrict the time delay well within the stipulated limits. The design is well supported with the experimental results for the whole set-up along with the series switch at various voltage level before its approval for operation at 5.2 kV.

Contribution of S4 segments and S4-S5 linkers to the low-voltage activation properties of T-type CaV3.3 channels.

PubMed

Sanchez-Sandoval, Ana Laura; Herrera Carrillo, Zazil; Díaz Velásquez, Clara Estela; Delgadillo, Dulce María; Rivera, Heriberto Manuel; Gomora, Juan Carlos

2018-01-01

Voltage-gated calcium channels contain four highly conserved transmembrane helices known as S4 segments that exhibit a positively charged residue every third position, and play the role of voltage sensing. Nonetheless, the activation range between high-voltage (HVA) and low-voltage (LVA) activated calcium channels is around 30-40 mV apart, despite the high level of amino acid similarity within their S4 segments. To investigate the contribution of S4 voltage sensors for the low-voltage activation characteristics of CaV3.3 channels we constructed chimeras by swapping S4 segments between this LVA channel and the HVA CaV1.2 channel. The substitution of S4 segment of Domain II in CaV3.3 by that of CaV1.2 (chimera IIS4C) induced a ~35 mV shift in the voltage-dependence of activation towards positive potentials, showing an I-V curve that almost overlaps with that of CaV1.2 channel. This HVA behavior induced by IIS4C chimera was accompanied by a 2-fold decrease in the voltage-dependence of channel gating. The IVS4 segment had also a strong effect in the voltage sensing of activation, while substitution of segments IS4 and IIIS4 moved the activation curve of CaV3.3 to more negative potentials. Swapping of IIS4 voltage sensor influenced additional properties of this channel such as steady-state inactivation, current decay, and deactivation. Notably, Domain I voltage sensor played a major role in preventing CaV3.3 channels to inactivate from closed states at extreme hyperpolarized potentials. Finally, site-directed mutagenesis in the CaV3.3 channel revealed a partial contribution of the S4-S5 linker of Domain II to LVA behavior, with synergic effects observed in double and triple mutations. These findings indicate that IIS4 and, to a lesser degree IVS4, voltage sensors are crucial in determining the LVA properties of CaV3.3 channels, although the accomplishment of this function involves the participation of other structural elements like S4-S5 linkers.

Contribution of S4 segments and S4-S5 linkers to the low-voltage activation properties of T-type CaV3.3 channels

PubMed Central

Sanchez-Sandoval, Ana Laura; Herrera Carrillo, Zazil; Díaz Velásquez, Clara Estela; Delgadillo, Dulce María; Rivera, Heriberto Manuel

2018-01-01

Voltage-gated calcium channels contain four highly conserved transmembrane helices known as S4 segments that exhibit a positively charged residue every third position, and play the role of voltage sensing. Nonetheless, the activation range between high-voltage (HVA) and low-voltage (LVA) activated calcium channels is around 30–40 mV apart, despite the high level of amino acid similarity within their S4 segments. To investigate the contribution of S4 voltage sensors for the low-voltage activation characteristics of CaV3.3 channels we constructed chimeras by swapping S4 segments between this LVA channel and the HVA CaV1.2 channel. The substitution of S4 segment of Domain II in CaV3.3 by that of CaV1.2 (chimera IIS4C) induced a ~35 mV shift in the voltage-dependence of activation towards positive potentials, showing an I-V curve that almost overlaps with that of CaV1.2 channel. This HVA behavior induced by IIS4C chimera was accompanied by a 2-fold decrease in the voltage-dependence of channel gating. The IVS4 segment had also a strong effect in the voltage sensing of activation, while substitution of segments IS4 and IIIS4 moved the activation curve of CaV3.3 to more negative potentials. Swapping of IIS4 voltage sensor influenced additional properties of this channel such as steady-state inactivation, current decay, and deactivation. Notably, Domain I voltage sensor played a major role in preventing CaV3.3 channels to inactivate from closed states at extreme hyperpolarized potentials. Finally, site-directed mutagenesis in the CaV3.3 channel revealed a partial contribution of the S4-S5 linker of Domain II to LVA behavior, with synergic effects observed in double and triple mutations. These findings indicate that IIS4 and, to a lesser degree IVS4, voltage sensors are crucial in determining the LVA properties of CaV3.3 channels, although the accomplishment of this function involves the participation of other structural elements like S4-S5 linkers. PMID:29474447

High-voltage solar-cell chip

NASA Technical Reports Server (NTRS)

Kapoor, V. J.; Valco, G. J.; Skebe, G. G.; Evans, J. C., Jr.

1985-01-01

Integrated circuit technology has been successfully applied to the design and fabrication of 0.5 x 0.5-cm planar multijunction solar-cell chips. Each of these solar cells consisted of six voltage-generating unit cells monolithically connected in series and fabricated on a 75-micron-thick, p-type, single crystal, silicon substrate. A contact photolithic process employing five photomask levels together with a standard microelectronics batch-processing technique were used to construct the solar-cell chip. The open-circuit voltage increased rapidly with increasing illumination up to 5 AM1 suns where it began to saturate at the sum of the individual unit-cell voltages at a maximum of 3.0 V. A short-circuit current density per unit cell of 240 mA/sq cm was observed at 10 AM1 suns.

Selective harmonic elimination strategy in eleven level inverter for PV system with unbalanced DC sources

NASA Astrophysics Data System (ADS)

Ghoudelbourk, Sihem.; Dib, D.; Meghni, B.; Zouli, M.

2017-02-01

The paper deals with the multilevel converters control strategy for photovoltaic system integrated in distribution grids. The objective of the proposed work is to design multilevel inverters for solar energy applications so as to reduce the Total Harmonic Distortion (THD) and to improve the power quality. The multilevel inverter power structure plays a vital role in every aspect of the power system. It is easier to produce a high-power, high-voltage inverter with the multilevel structure. The topologies of multilevel inverter have several advantages such as high output voltage, lower total harmonic distortion (THD) and reduction of voltage ratings of the power semiconductor switching devices. The proposed control strategy ensures an implementation of selective harmonic elimination (SHE) modulation for eleven levels. SHE is a very important and efficient strategy of eliminating selected harmonics by judicious selection of the firing angles of the inverter. Harmonics elimination technique eliminates the need of the expensive low pass filters in the system. Previous research considered that constant and equal DC sources with invariant behavior; however, this research extends earlier work to include variant DC sources, which are typical of lead-acid batteries when used in system PV. This Study also investigates methods to minimize the total harmonic distortion of the synthesized multilevel waveform and to help balance the battery voltage. The harmonic elimination method was used to eliminate selected lower dominant harmonics resulting from the inverter switching action.

30 CFR 75.705 - Work on high-voltage lines; deenergizing and grounding.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Work on high-voltage lines; deenergizing and... Work on high-voltage lines; deenergizing and grounding. [Statutory Provisions] High-voltage lines, both..., except that repairs may be permitted, in the case of energized surface high-voltage lines, if such...

30 CFR 75.813 - High-voltage longwalls; scope.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage longwalls; scope. 75.813 Section 75.813 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution High-Voltage Longwalls § 75.813 High-voltage...

30 CFR 75.813 - High-voltage longwalls; scope.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false High-voltage longwalls; scope. 75.813 Section 75.813 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution High-Voltage Longwalls § 75.813 High-voltage...

A gigawatt level repetitive rate adjustable magnetic pulse compressor.

PubMed

Li, Song; Gao, Jing-Ming; Yang, Han-Wu; Qian, Bao-Liang; Li, Ze-Xin

2015-08-01

In this paper, a gigawatt level repetitive rate adjustable magnetic pulse compressor is investigated both numerically and experimentally. The device has advantages of high power level, high repetitive rate achievability, and long lifetime reliability. Importantly, dominate parameters including the saturation time, the peak voltage, and even the compression ratio can be potentially adjusted continuously and reliably, which significantly expands the applicable area of the device and generators based on it. Specifically, a two-stage adjustable magnetic pulse compressor, utilized for charging the pulse forming network of a high power pulse generator, is designed with different compression ratios of 25 and 18 through an optimized design process. Equivalent circuit analysis shows that the modification of compression ratio can be achieved by just changing the turn number of the winding. At the same time, increasing inductance of the grounded inductor will decrease the peak voltage and delay the charging process. Based on these analyses, an adjustable compressor was built and studied experimentally in both the single shot mode and repetitive rate mode. Pulses with peak voltage of 60 kV and energy per pulse of 360 J were obtained in the experiment. The rise times of the pulses were compressed from 25 μs to 1 μs and from 18 μs to 1 μs, respectively, at repetitive rate of 20 Hz with good repeatability. Experimental results show reasonable agreement with analyses.

30 CFR 75.807 - Installation of high-voltage transmission cables.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Installation of high-voltage transmission...-Voltage Distribution § 75.807 Installation of high-voltage transmission cables. [Statutory Provisions] All underground high-voltage transmission cables shall be installed only in regularly inspected air courses and...

Application of the superposition principle to solar-cell analysis

NASA Technical Reports Server (NTRS)

Lindholm, F. A.; Fossum, J. G.; Burgess, E. L.

1979-01-01

The superposition principle of differential-equation theory - which applies if and only if the relevant boundary-value problems are linear - is used to derive the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Analytical methods are presented to treat cases where shifting is not strictly valid. Well-defined conditions necessary for superposition to apply are established. For high injection in the base region, the method of analysis accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level).

Ground difference compensating system

DOEpatents

Johnson, Kris W.; Akasam, Sivaprasad

2005-10-25

A method of ground level compensation includes measuring a voltage of at least one signal with respect to a primary ground potential and measuring, with respect to the primary ground potential, a voltage level associated with a secondary ground potential. A difference between the voltage level associated with the secondary ground potential and an expected value is calculated. The measured voltage of the at least one signal is adjusted by an amount corresponding to the calculated difference.

The Rated Voltage Determination of DC Building Power Supply System Considering Human Beings Safety

NASA Astrophysics Data System (ADS)

Wang, Zhicheng; Yu, Kansheng; Xie, Guoqiang; Zou, Jin

2018-01-01

Generally two-level voltages are adopted for DC building power supply system. From the point of view of human beings safety, only the lower level voltage which may be contacted barehanded is discussed in this paper based on the related safety thresholds of human beings current effect. For several voltage levels below 100V recommended by IEC, the body current and current density of human electric shock under device normal work condition, as well as effect of unidirectional single impulse currents of short durations are calculated and analyzed respectively. Finally, DC 60V is recommended as the lower level rating voltage through the comprehensive consideration of technical condition and cost of safety criteria.

30 CFR 75.800 - High-voltage circuits; circuit breakers.

Code of Federal Regulations, 2010 CFR

2010-07-01

... shall be equipped with devices to provide protection against under-voltage grounded phase, short circuit... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 75.800... § 75.800 High-voltage circuits; circuit breakers. [Statutory Provisions] High-voltage circuits entering...

30 CFR 75.802 - Protection of high-voltage circuits extending underground.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Protection of high-voltage circuits extending...-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as provided in paragraph (b) of this section, high-voltage circuits extending underground and supplying...

30 CFR 75.802 - Protection of high-voltage circuits extending underground.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Protection of high-voltage circuits extending...-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as provided in paragraph (b) of this section, high-voltage circuits extending underground and supplying...

30 CFR 75.802 - Protection of high-voltage circuits extending underground.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Protection of high-voltage circuits extending...-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as provided in paragraph (b) of this section, high-voltage circuits extending underground and supplying...

Improved multi-level capability in Si3N4-based resistive switching memory using continuous gradual reset switching

NASA Astrophysics Data System (ADS)

Kim, Sungjun; Park, Byung-Gook

2017-01-01

In this letter, we compare three different types of reset switching behavior in a bipolar resistive random-access memory (RRAM) system that is housed in a Ni/Si3N4/Si structure. The abrupt, step-like gradual and continuous gradual reset transitions are largely determined by the low-resistance state (LRS). For abrupt reset switching, the large conducting path shows ohmic behavior or has a weak nonlinear current-voltage (I-V) characteristics in the LRS. For gradual switching, including both the step-like and continuous reset types, trap-assisted direct tunneling is dominant in the low-voltage regime, while trap-assisted Fowler-Nordheim tunneling is dominant in the high-voltage regime, thus causing nonlinear I-V characteristics. More importantly, we evaluate the multi-level capabilities of the two different gradual switching types, including both step-like and continuous reset behavior, using identical and incremental voltage conditions. Finer control of the conductance level with good uniformity is achieved in continuous gradual reset switching when compared to that in step-like gradual reset switching. For continuous reset switching, a single conducting path, which initially has a tunneling gap, gradually responds to pulses with even and identical amplitudes, while for step-like reset switching, the multiple conducting paths only respond to incremental pulses to obtain effective multi-level states.

Advanced Power Sources for Space Missions

DTIC Science & Technology

1989-01-01

Range indicate that extremely high power levels hav- ing fast time-ramping capabilities must be provided during the tests. Only highly efficient prime...system efficiency results from advantages in thermal storage versus battery storage and from the increased conversion efficiency of a solar-dynamic... thermal manage- ment, power flow, and voltage levels, and may be in the same power range already experienced in the very- high -power radar and fusion

Highly tunable local gate controlled complementary graphene device performing as inverter and voltage controlled resistor.

PubMed

Kim, Wonjae; Riikonen, Juha; Li, Changfeng; Chen, Ya; Lipsanen, Harri

2013-10-04

Using single-layer CVD graphene, a complementary field effect transistor (FET) device is fabricated on the top of separated back-gates. The local back-gate control of the transistors, which operate with low bias at room temperature, enables highly tunable device characteristics due to separate control over electrostatic doping of the channels. Local back-gating allows control of the doping level independently of the supply voltage, which enables device operation with very low VDD. Controllable characteristics also allow the compensation of variation in the unintentional doping typically observed in CVD graphene. Moreover, both p-n and n-p configurations of FETs can be achieved by electrostatic doping using the local back-gate. Therefore, the device operation can also be switched from inverter to voltage controlled resistor, opening new possibilities in using graphene in logic circuitry.

Performance analysis of radiation cooled dc transmission lines for high power space systems

NASA Technical Reports Server (NTRS)

Schwarze, G. E.

1985-01-01

As space power levels increase to meet mission objectives and also as the transmission distance between power source and load increases, the mass, volume, power loss, and operating voltage and temperature become important system design considerations. This analysis develops the dependence of the specific mass and percent power loss on hte power and voltage levels, transmission distance, operating temperature and conductor material properties. Only radiation cooling is considered since the transmission line is assumed to operate in a space environment. The results show that the limiting conditions for achieving low specific mass, percent power loss, and volume for a space-type dc transmission line are the permissible transmission voltage and operating temperature. Other means to achieve low specific mass include the judicious choice of conductor materials. The results of this analysis should be immediately applicable to power system trade-off studies including comparisons with ac transmission systems.

Transient Evolutional Dynamics of Quantum-Dot Molecular Phase Coherence for Sensitive Optical Switching

NASA Astrophysics Data System (ADS)

Shen, Jian Qi; Gu, Jing

2018-04-01

Atomic phase coherence (quantum interference) in a multilevel atomic gas exhibits a number of interesting phenomena. Such an atomic quantum coherence effect can be generalized to a quantum-dot molecular dielectric. Two quantum dots form a quantum-dot molecule, which can be described by a three-level Λ-configuration model { |0> ,|1> ,|2> } , i.e., the ground state of the molecule is the lower level |0> and the highly degenerate electronic states in the two quantum dots are the two upper levels |1> ,|2> . The electromagnetic characteristics due to the |0>-|1> transition can be controllably manipulated by a tunable gate voltage (control field) that drives the |2>-|1> transition. When the gate voltage is switched on, the quantum-dot molecular state can evolve from one steady state (i.e., |0>-|1> two-level dressed state) to another steady state (i.e., three-level coherent-population-trapping state). In this process, the electromagnetic characteristics of a quantum-dot molecular dielectric, which is modified by the gate voltage, will also evolve. In this study, the transient evolutional behavior of the susceptibility of a quantum-dot molecular thin film and its reflection spectrum are treated by using the density matrix formulation of the multilevel systems. The present field-tunable and frequency-sensitive electromagnetic characteristics of a quantum-dot molecular thin film, which are sensitive to the applied gate voltage, can be utilized to design optical switching devices.

Calibration of Voltage Transformers and High- Voltage Capacitors at NIST

PubMed Central

Anderson, William E.

1989-01-01

The National Institute of Standards and Technology (NIST) calibration service for voltage transformers and high-voltage capacitors is described. The service for voltage transformers provides measurements of ratio correction factors and phase angles at primary voltages up to 170 kV and secondary voltages as low as 10 V at 60 Hz. Calibrations at frequencies from 50–400 Hz are available over a more limited voltage range. The service for high-voltage capacitors provides measurements of capacitance and dissipation factor at applied voltages ranging from 100 V to 170 kV at 60 Hz depending on the nominal capacitance. Calibrations over a reduced voltage range at other frequencies are also available. As in the case with voltage transformers, these voltage constraints are determined by the facilities at NIST. PMID:28053409

Voltage-Gated Na+ Channel Isoforms and Their mRNA Expression Levels and Protein Abundance in Three Electric Organs and the Skeletal Muscle of the Electric Eel Electrophorus electricus

PubMed Central

Hiong, Kum C.; Boo, Mel V.; Wong, Wai P.; Chew, Shit F.

2016-01-01

This study aimed to obtain the coding cDNA sequences of voltage-gated Na+ channel (scn) α-subunit (scna) and β-subunit (scnb) isoforms from, and to quantify their transcript levels in, the main electric organ (EO), Hunter’s EO, Sach’s EO and the skeletal muscle (SM) of the electric eel, Electrophorus electricus, which can generate both high and low voltage electric organ discharges (EODs). The full coding sequences of two scna (scn4aa and scn4ab) and three scnb (scn1b, scn2b and scn4b) were identified for the first time (except scn4aa) in E. electricus. In adult fish, the scn4aa transcript level was the highest in the main EO and the lowest in the Sach’s EO, indicating that it might play an important role in generating high voltage EODs. For scn4ab/Scn4ab, the transcript and protein levels were unexpectedly high in the EOs, with expression levels in the main EO and the Hunter’s EO comparable to those of scn4aa. As the key domains affecting the properties of the channel were mostly conserved between Scn4aa and Scn4ab, Scn4ab might play a role in electrogenesis. Concerning scnb, the transcript level of scn4b was much higher than those of scn1b and scn2b in the EOs and the SM. While the transcript level of scn4b was the highest in the main EO, protein abundance of Scn4b was the highest in the SM. Taken together, it is unlikely that Scna could function independently to generate EODs in the EOs as previously suggested. It is probable that different combinations of Scn4aa/Scn4ab and various Scnb isoforms in the three EOs account for the differences in EODs produced in E. electricus. In general, the transcript levels of various scn isoforms in the EOs and the SM were much higher in adult than in juvenile, and the three EOs of the juvenile fish could be functionally indistinct. PMID:27907137

Stray voltage and milk quality: a review.

PubMed

Reinemann, Douglas J

2012-07-01

If animal contact voltage reaches sufficient levels, animals coming into contact with grounded devices may receive a mild electric shock that can cause a behavioral response. At voltage levels that are just perceptible to the animal, behaviors indicative of perception (eg, flinches) may result with little change in normal routines. At higher exposure levels, avoidance behaviors may result. The direct effect of animal contact with electrical current can range from: • Mild behavioral reactions indicative of sensation, to • Involuntary muscle contraction, or twitching, to • Intense behavioral responses indicative of pain. The indirect effects of these behaviors can vary considerably depending on the specifics of the contact location, level of current flow, body pathway, frequency of occurrence, and many other factors related to the daily activities of animals. There are several common situations of concern in animal environments: • Animals avoiding certain exposure locations, which may result in: X Reduced water intake if exposure is required for animals to access watering devices, X Reduced feed intake if exposure is required for animals to accesses feeding devices or locations. • Difficulty of moving or handling animals in areas of voltage/current exposure• The physiologic implications of the release of stress hormones produced by contact with painful stimuli. The severity of response will depend on the amount of electrical current (measured in milliamps) flowing through the animal’s body, the pathway it takes through the body, and the sensitivity of the individual animal. The results of the combined current dose-response experiments, voltage exposure response experiments, and measurements of body and contact resistances is consistent with the lowest (worst case) cow + contact resistance as low as 500 as estimated by Lefcourt that may occur in some unusual situations on farms (firm application of the muzzle to a wet metallic watering device and hoof contact on a clean, wet, contoured metallic plate on the floor). These studies on responses of dairy cows to electrical exposure agree well with each other and with predictions from neuroelectric theory and practice. There is a high degree of repeatability across studies in which exposures and responses have been appropriately quantified. For confirmation, a potential of 2 to 4 V (60 Hz, rms) must be measured between 2 points that an animal might contact (or animal contact measurement), and some animals should exhibit signs of avoidance behavior. The animal contact voltage measurement with an appropriate shunt resistor value provides the only reliable indication of exposure levels. Voltage readings at cow contact points should be made with a 500- or 1000- resistor across the 2 measuring leads to the cow contact points in addition to open circuit measurements. The only studies that have documented adverse effects of voltage and current on cows had both sufficient current applied to cause aversion and forced exposures (ie, animals could not eat or drink without being exposed to voltage and current) and all of the indirect responses (reduced water or intake and milk production) were behaviorally mediated. It is typical for voltage levels to vary considerably at different locations on a farm. Decreased water and/or feed intake or undesired behaviors result only if current levels are sufficient to produce aversion at locations that are critical to daily animal activity, such as feeders, waterers, and milking areas. If an aversive current occurs only a few times per day, it is not likely to have an adverse effect on cow behavior. The more often an aversive voltage occurs in areas critical to cows’ normal feeding, drinking, or resting, the more likely it is to affect cows. A number of studies have been done to investigate potential detrimental physiologic responses that may result from animals’ exposure to voltage and current. The literature review presented here summarizes 46 research trials on groups of cows exposed to know levels of voltage and/or current. Many of these were part of the same experiment but exposed cows at different levels of voltage or current. None of these trials or experiments (some using aggressive exposure of cows to mastitis organisms) showed a significant effect of voltage/current exposure on SCC or the incidence of mastitis. Many of these studies showed behavioral modification and some showed minor changes in milk yield, milk composition, or stress hormones (especially cortisol). These studies have shown that increased concentrations of the stress hormone cortisol do not occur at levels below behavioral response levels and only become apparent in some, but not all, cows at substantially higher voltage/current exposures than the threshold required for behavioral modification. This body of research indicates that while exposure to stray voltage at levels of 2 V to 4 V may be a mild stressor to dairy cows, it does not contribute to increased SCC or incidence of mastitis or reduced milk yield.

60 V tolerance full symmetrical switch for battery monitor IC

NASA Astrophysics Data System (ADS)

Zhang, Qidong; Yang, Yintang; Chai, Changchun

2017-06-01

For stacked battery monitoring IC high speed and high precision voltage acquisition requirements, this paper introduces a kind of symmetrical type high voltage switch circuit. This kind of switch circuit uses the voltage following structure, which eliminates the leakage path of input signals. At the same time, this circuit adopts a high speed charge pump structure, in any case the input signal voltage is higher than the supply voltage, it can fast and accurately turn on high voltage MOS devices, and convert the battery voltage to an analog to digital converter. The proposed high voltage full symmetry switch has been implemented in a 0.18 μm BCD process; simulated and measured results show that the proposed switch can always work properly regardless of the polarity of the voltage difference between the input signal ports and an input signal higher than the power supply. Project supported by the National Natural Science Foundation of China (No. 61334003).

Wireless multi-level terahertz amplitude modulator using active metamaterial-based spatial light modulation.

PubMed

Rout, Saroj; Sonkusale, Sameer

2016-06-27

The ever increasing demand for bandwidth in wireless communication systems will inevitably lead to the extension of operating frequencies toward the terahertz (THz) band known as the 'THz gap'. Towards closing this gap, we present a multi-level amplitude shift keying (ASK) terahertz wireless communication system using terahertz spatial light modulators (SLM) instead of traditional voltage mode modulation, achieving higher spectral efficiency for high speed communication. The fundamental principle behind this higher efficiency is the conversion of a noisy voltage domain signal to a noise-free binary spatial pattern for effective amplitude modulation of a free-space THz carrier wave. Spatial modulation is achieved using an an active metamaterial array embedded with pseudomorphic high-electron mobility (pHEMT) designed in a consumer-grade galium-arsenide (GaAs) integrated circuit process which enables electronic control of its THz transmissivity. Each array is assembled as individually controllable tiles for transmissive terahertz spatial modulation. Using the experimental data from our metamaterial based modulator, we show that a four-level ASK digital communication system has two orders of magnitude improvement in symbol error rate (SER) for a degradation of 20 dB in transmit signal-to-noise ratio (SNR) using spatial light modulation compared to voltage controlled modulation.

FPGA in-the-loop simulations of cardiac excitation model under voltage clamp conditions

NASA Astrophysics Data System (ADS)

Othman, Norliza; Adon, Nur Atiqah; Mahmud, Farhanahani

2017-01-01

Voltage clamp technique allows the detection of single channel currents in biological membranes in identifying variety of electrophysiological problems in the cellular level. In this paper, a simulation study of the voltage clamp technique has been presented to analyse current-voltage (I-V) characteristics of ion currents based on Luo-Rudy Phase-I (LR-I) cardiac model by using a Field Programmable Gate Array (FPGA). Nowadays, cardiac models are becoming increasingly complex which can cause a vast amount of time to run the simulation. Thus, a real-time hardware implementation using FPGA could be one of the best solutions for high-performance real-time systems as it provides high configurability and performance, and able to executes in parallel mode operation. For shorter time development while retaining high confidence results, FPGA-based rapid prototyping through HDL Coder from MATLAB software has been used to construct the algorithm for the simulation system. Basically, the HDL Coder is capable to convert the designed MATLAB Simulink blocks into hardware description language (HDL) for the FPGA implementation. As a result, the voltage-clamp fixed-point design of LR-I model has been successfully conducted in MATLAB Simulink and the simulation of the I-V characteristics of the ionic currents has been verified on Xilinx FPGA Virtex-6 XC6VLX240T development board through an FPGA-in-the-loop (FIL) simulation.

PZT/PLZT - elastomer composites with improved piezoelectric voltage coefficient

NASA Astrophysics Data System (ADS)

Harikrishnan, K.; Bavbande, D. V.; Mohan, Dhirendra; Manoharan, B.; Prasad, M. R. S.; Kalyanakrishnan, G.

2018-02-01

Lead Zirconate Titanate (PZT) and Lanthanum-modified Lead Zirconate Titanate (PLZT) ceramic sensor materials are widely used because of their excellent piezoelectric coefficients. These materials are brittle, high density and have low achievable piezoelectric voltage coefficients. The density of the sintered ceramics shall be reduced by burnable polymeric sponge method. The achievable porosity level in this case is nearly 60 - 90%. However, the porous ceramic structure with 3-3 connectivity produced by this method is very fragile in nature. The strength of the porous structure is improved with Sylgard®-184 (silicone elastomer) by vacuum impregnation method maintaining the dynamic vacuum level in the range of -650 mm Hg. The elastomer Sylgard®-184 is having low density, low dielectric constant and high compliance (as a resultant stiffness of the composites is increased). To obtain a net dipole moment, the impregnated ceramic composites were subjected to poling treatment with varying conditions of D.C. field and temperature. The properties of the poled PZT/PLZT - elastomer composites were characterized with LCR meter for measuring the dielectric constant values (k), d33 meter used for measuring piezo-electric charge coefficient values (d33) and piezo-electric voltage coefficient (g33) values which were derived from d33 values. The voltage coefficient (g33) values of these composites are increased by 10 fold as compared to the conventional solid ceramics demonstrates that it is possible to fabricate a conformable detector.

High voltage variable diameter insulator

DOEpatents

Vanacek, D.L.; Pike, C.D.

1982-07-13

A high voltage feedthrough assembly having a tubular insulator extending between the ground plane ring and the high voltage ring. The insulator is made of Pyrex and decreases in diameter from the ground plane ring to the high voltage ring, producing equipotential lines almost perpendicular to the wall of the insulator to optimize the voltage-holding capability of the feedthrough assembly.

30 CFR 77.704-2 - Repairs to energized high-voltage lines.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Repairs to energized high-voltage lines. 77.704... UNDERGROUND COAL MINES Grounding § 77.704-2 Repairs to energized high-voltage lines. An energized high-voltage... repairs will be performed on power circuits with a phase-to-phase nominal voltage no greater than 15,000...

30 CFR 75.705-2 - Repairs to energized surface high-voltage lines.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Repairs to energized surface high-voltage lines... Repairs to energized surface high-voltage lines. An energized high-voltage surface line may be repaired... on power circuits with a phase-to-phase nominal voltage no greater than 15,000 volts; (3) Such...

Novel design of high voltage pulse source for efficient dielectric barrier discharge generation by using silicon diodes for alternating current.

PubMed

Truong, Hoa Thi; Hayashi, Misaki; Uesugi, Yoshihiko; Tanaka, Yasunori; Ishijima, Tatsuo

2017-06-01

This work focuses on design, construction, and optimization of configuration of a novel high voltage pulse power source for large-scale dielectric barrier discharge (DBD) generation. The pulses were generated by using the high-speed switching characteristic of an inexpensive device called silicon diodes for alternating current and the self-terminated characteristic of DBD. The operation started to be powered by a primary DC low voltage power supply flexibly equipped with a commercial DC power supply, or a battery, or DC output of an independent photovoltaic system without transformer employment. This flexible connection to different types of primary power supply could provide a promising solution for the application of DBD, especially in the area without power grid connection. The simple modular structure, non-control requirement, transformer elimination, and a minimum number of levels in voltage conversion could lead to a reduction in size, weight, simple maintenance, low cost of installation, and high scalability of a DBD generator. The performance of this pulse source has been validated by a load of resistor. A good agreement between theoretically estimated and experimentally measured responses has been achieved. The pulse source has also been successfully applied for an efficient DBD plasma generation.

Novel design of high voltage pulse source for efficient dielectric barrier discharge generation by using silicon diodes for alternating current

NASA Astrophysics Data System (ADS)

Truong, Hoa Thi; Hayashi, Misaki; Uesugi, Yoshihiko; Tanaka, Yasunori; Ishijima, Tatsuo

2017-06-01

This work focuses on design, construction, and optimization of configuration of a novel high voltage pulse power source for large-scale dielectric barrier discharge (DBD) generation. The pulses were generated by using the high-speed switching characteristic of an inexpensive device called silicon diodes for alternating current and the self-terminated characteristic of DBD. The operation started to be powered by a primary DC low voltage power supply flexibly equipped with a commercial DC power supply, or a battery, or DC output of an independent photovoltaic system without transformer employment. This flexible connection to different types of primary power supply could provide a promising solution for the application of DBD, especially in the area without power grid connection. The simple modular structure, non-control requirement, transformer elimination, and a minimum number of levels in voltage conversion could lead to a reduction in size, weight, simple maintenance, low cost of installation, and high scalability of a DBD generator. The performance of this pulse source has been validated by a load of resistor. A good agreement between theoretically estimated and experimentally measured responses has been achieved. The pulse source has also been successfully applied for an efficient DBD plasma generation.

Network topology and resilience analysis of South Korean power grid

NASA Astrophysics Data System (ADS)

Kim, Dong Hwan; Eisenberg, Daniel A.; Chun, Yeong Han; Park, Jeryang

2017-01-01

In this work, we present topological and resilience analyses of the South Korean power grid (KPG) with a broad voltage level. While topological analysis of KPG only with high-voltage infrastructure shows an exponential degree distribution, providing another empirical evidence of power grid topology, the inclusion of low voltage components generates a distribution with a larger variance and a smaller average degree. This result suggests that the topology of a power grid may converge to a highly skewed degree distribution if more low-voltage data is considered. Moreover, when compared to ER random and BA scale-free networks, the KPG has a lower efficiency and a higher clustering coefficient, implying that highly clustered structure does not necessarily guarantee a functional efficiency of a network. Error and attack tolerance analysis, evaluated with efficiency, indicate that the KPG is more vulnerable to random or degree-based attacks than betweenness-based intentional attack. Cascading failure analysis with recovery mechanism demonstrates that resilience of the network depends on both tolerance capacity and recovery initiation time. Also, when the two factors are fixed, the KPG is most vulnerable among the three networks. Based on our analysis, we propose that the topology of power grids should be designed so the loads are homogeneously distributed, or functional hubs and their neighbors have high tolerance capacity to enhance resilience.

Evaluation of the Fretting Resistance of the High Voltage Insulation on the ITER Magnet Feeder Busbars

NASA Astrophysics Data System (ADS)

Clayton, N.; Crouchen, M.; Evans, D.; Gung, C.-Y.; Su, M.; Devred, A.; Piccin, R.

2017-12-01

The high voltage (HV) insulation on the ITER magnet feeder superconducting busbars and current leads will be prepared from S-glass fabric, pre-impregnated with an epoxy resin, which is interleaved with polyimide film and wrapped onto the components and cured during feeder manufacture. The insulation architecture consists of nine half-lapped layers of glass/Kapton, which is then enveloped in a ground-screen, and two further half-lapped layers of glass pre-preg for mechanical protection. The integrity of the HV insulation is critical in order to inhibit electrical arcs within the feeders. The insulation over the entire length of the HV components (bus bar, current leads and joints) must provide a level of voltage isolation of 30 kV. In operation, the insulation on ITER busbars will be subjected to high mechanical loads, arising from Lorentz forces, and in addition will be subjected to fretting erosion against stainless steel clamps, as the pulsed nature of some magnets results in longitudinal movement of the busbar. This work was aimed at assessing the wear on, and the changes in, the electrical properties of the insulation when subjected to typical ITER operating conditions. High voltage tests demonstrated that the electrical isolation of the insulation was intact after the fretting test.

Experimental results on plasma interactions with large surfaces at high voltages

NASA Technical Reports Server (NTRS)

Grier, N. T.

1980-01-01

Multikilowatt power levels for future payloads can be more efficiently generated using solar arrays operating in the kilovolt range. This implies that large areas of the array at high operating voltages will be exposed to the space plasma environment. The resulting interactions of these high voltage surfaces with space plasma environments can seriously impact the performance of the satellite system. The plasma-surface interaction phenomena were studied in tests performed in two separate vacuum chambers, a 4.6 m diameter by 19.2 long chamber and a 20 m diameter by 27.4 m long chamber. The generated plasma density was approximately 1x10 to the 4th power/cu cm. Ten solar array panels, each with areas of 1400 sq cm were used in the tests. Nine of the solar panels were tested as a composite unit in the form of a 3x3 solar panel matrix. The results from all the tests confirmed small sample tests results: insulators were found to enhance the plasma coupling current for high positive bias and arcing was found to occur at high negative bias.

A combined compensation method for the output voltage of an insulated core transformer power supply

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, L.; Yang, J., E-mail: jyang@mail.hust.edu.cn; Liu, K. F.

2014-06-15

An insulated core transformer (ICT) power supply is an ideal high-voltage generator for irradiation accelerators with energy lower than 3 MeV. However, there is a significant problem that the structure of the segmented cores leads to an increase in the leakage flux and voltage differences between rectifier disks. A high level of consistency in the output of the disks helps to achieve a compact structure by improving the utilization of both the rectifier components and the insulation distances, and consequently increase the output voltage of the power supply. The output voltages of the disks which are far away from themore » primary coils need to be improved to reduce their inhomogeneity. In this study, by investigating and comparing the existing compensation methods, a new combined compensation method is proposed, which increases the turns on the secondary coils and employs parallel capacitors to improve the consistency of the disks, while covering the entire operating range of the power supply. This method turns out to be both feasible and effective during the development of an ICT power supply. The non-uniformity of the output voltages of the disks is less than 3.5% from no-load to full-load, and the power supply reaches an output specification of 350 kV/60 mA.« less

Quasi-multi-pulse voltage source converter design with two control degrees of freedom

NASA Astrophysics Data System (ADS)

Vural, A. M.; Bayindir, K. C.

2015-05-01

In this article, the design details of a quasi-multi-pulse voltage source converter (VSC) switched at line frequency of 50 Hz are given in a step-by-step process. The proposed converter is comprised of four 12-pulse converter units, which is suitable for the simulation of single-/multi-converter flexible alternating current transmission system devices as well as high voltage direct current systems operating at the transmission level. The magnetic interface of the converter is originally designed with given all parameters for 100 MVA operation. The so-called two-angle control method is adopted to control the voltage magnitude and the phase angle of the converter independently. PSCAD simulation results verify both four-quadrant converter operation and closed-loop control of the converter operated as static synchronous compensator (STATCOM).

Two-stage single-phase grid-connected photovoltaic system with reduced complexity

NASA Astrophysics Data System (ADS)

da Silva, Cintia S.; Motta, Filipe R.; Tofoli, Fernando L.

2011-06-01

This article presents a grid-connected photovoltaic (PV) system using the classical DC-DC buck converter, which is responsible for stepping down the resulting voltage from several series-connected panels. Besides, the structure provides high power factor operation by injecting a quasi-sinusoidal current into the grid, with near no displacement in relation to the line voltage at the point of common coupling among the PV system and the loads. A CSI employing thyristors is cascaded with the DC-DC stage so that AC voltage results. The inverter output voltage level is adjusted by using a low-frequency transformer, which also provides galvanic isolation. The proposed system is described as mathematical approach and design guidelines are presented, providing an overview of the topology. An experimental prototype is also implemented, and relevant results to validate the proposal are discussed.

Hierarchical Control Scheme for Improving Transient Voltage Recovery of a DFIG-Based WPP

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jinho; Muljadi, Eduard; Kang, Yong Cheol

Modern grid codes require that wind power plants (WPPs) inject reactive power according to the voltage dip at a point of interconnection (POI). This requirement helps to support a POI voltage during a fault. However, if a fault is cleared, the POI and wind turbine generator (WTG) voltages are likely to exceed acceptable levels unless the WPP reduces the injected reactive power quickly. This might deteriorate the stability of a grid by allowing the disconnection of WTGs to avoid any damage. This paper proposes a hierarchical control scheme of a doubly-fed induction generator (DFIG)-based WPP. The proposed scheme aims tomore » improve the reactive power injecting capability during the fault and suppress the overvoltage after the fault clearance. To achieve the former, an adaptive reactive power-to-voltage scheme is implemented in each DFIG controller so that a DFIG with a larger reactive power capability will inject more reactive power. To achieve the latter, a washout filter is used to capture a high frequency component contained in the WPP voltage, which is used to remove the accumulated values in the proportional-integral controllers. Test results indicate that the scheme successfully supports the grid voltage during the fault, and recovers WPP voltages without exceeding the limit after the fault clearance.« less

SU-E-I-26: Estimation of Micro-Angiographic Fluoroscope (MAF) Gain Settings for Digital Subtraction Angiography (DSA) Based on the Fluoroscopic Exposure.

PubMed

Ionita, C; Loughran, B; Nagesh, S Setlur; Jain, A; Bednarek, D; Rudin, S

2012-06-01

The MAF is a new high-resolution detector which is being clinically evaluated in neuro-vascular procedures. The detector contains a large-dynamic-range, high-sensitivity light image intensifier with variable gain. Since the MAF is a research prototype only partially integrated with the clinical system, x-ray technique parameters must be set manually. To improve workflow we developed an automatic method to estimate and set the proper LII voltage (MAF gain) for DSA acquisition based on the fluoroscopic parameters. The detector entrance exposure (XD) can be written as the x-ray tube output exposure (Xo) times an object attenuation factor and an inverse-square correction. If the object attenuation, scatter and distances are unchanged and the effect of x-ray kVp changes are neglected, then the DSA XD can be expressed as the ratio of Xo(DSA)/Xo(Fluoroscopy) multiplied with XD(fluoroscopy). We measured Xo for fluoroscopy and DSA for mAs and kVp ranges appropriate to neuro- vascular interventions and fit the data with a 2D function. To estimate the XD(Fluoroscopy) we derived a curve of XD versus LII-voltage for a mid- dynamic-range average pixel gray-level. Since the MAF system during clinical fluoroscopy automatically adjusts the LII voltage until the desired gray-level value is achieved, by reading that voltage we can estimate the XD(Fluoroscopy). Using the 2D-fit function, Xo(DSA) is automatically calculated for the kVp and mA values set and XD(DSA) can be estimated using the relation above. Using the inverse LII calibration curve, the proper LII-voltage can be determined for the desired average gray-level. The algorithm was implemented and evaluated in thirty-two in-vivo DSA runs on rabbits. The proper LII voltage was selected in all cases with no failures. Using the fluoroscopic LII gain setting to determine the appropriate DSA setting can greatly improve the workflow in clinical evaluations of the MAF. NIH Grants R01-EB008425, R01-EB002873 and an equipment grant from Toshiba Medical Systems Corp. © 2012 American Association of Physicists in Medicine.

Influence of Ambient Humidity on the Voltage Response of Ionic Polymer-Metal Composite Sensor.

PubMed

Zhu, Zicai; Horiuchi, Tetsuya; Kruusamäe, Karl; Chang, Longfei; Asaka, Kinji

2016-03-31

Electrical potential based on ion migration exists not only in natural systems but also in ionic polymer materials. In order to investigate the influence of ambient humidity on voltage response, classical Au-Nafion IPMC was chosen as the reference sample. Voltage response under a bending deformation was measured in two ways: first, continuous measurement of voltage response in the process of absorption and desorption of water to study the tendency of voltage variation at all water states; second, measurements at multiple fixed ambient humidity levels to characterize the process of voltage response quantitatively. Ambient humidity influences the voltage response mainly by varying water content in ionic polymer. Under a step bending, the amplitude of initial voltage peak first increases and then decreases as the ambient humidity and the inherent water content decrease. This tendency is explained semiquantitatively by mass storage capacity related to the stretchable state of the Nafion polymer network. Following the initial peak, the voltage shows a slow decay to a steady state, which is first characterized in this paper. The relative voltage decay during the steady state always decreases as the ambient humidity is lowered. It is ascribed to progressive increase of the ratio between the water molecules in the cation hydration shell to the free water. Under sinusoidal mechanical bending excitation in the range of 0.1-10 Hz, the voltage magnitude increases with frequency at high ambient humidity but decreases with frequency at low ambient humidity. The relationship is mainly controlled by the voltage decay effect and the response speed.

Impact of Solar Array Designs on High Voltage Operations

NASA Technical Reports Server (NTRS)

Brandhorst, Henry W., Jr.; Ferguson, Dale; Piszczor, Mike; ONeill, Mark

2006-01-01

As power levels of advanced spacecraft climb above 25 kW, higher solar array operating voltages become attractive. Even in today s satellites, operating spacecraft buses at 100 V and above has led to arcing in GEO communications satellites, so the issue of spacecraft charging and solar array arcing remains a design problem. In addition, micrometeoroid impacts on all of these arrays can also lead to arcing if the spacecraft is at an elevated potential. For example, tests on space station hardware disclosed arcing at 75V on anodized A1 structures that were struck with hypervelocity particles in Low Earth Orbit (LEO) plasmas. Thus an understanding of these effects is necessary to design reliable high voltage solar arrays of the future, especially in light of the Vision for Space Exploration of NASA. In the future, large GEO communication satellites, lunar bases, solar electric propulsion missions, high power communication systems around Mars can lead to power levels well above 100 kW. As noted above, it will be essential to increase operating voltages of the solar arrays well above 80 V to keep the mass of cabling needed to carry the high currents to an acceptable level. Thus, the purpose of this paper is to discuss various solar array approaches, to discuss the results of testing them at high voltages, in the presence of simulated space plasma and under hypervelocity impact. Three different types of arrays will be considered. One will be a planar array using thin film cells, the second will use planar single or multijunction cells and the last will use the Stretched Lens Array (SLA - 8-fold concentration). Each of these has different approaches for protection from the space environment. The thin film cell based arrays have minimal covering due to their inherent radiation tolerance, conventional GaAs and multijunction cells have the traditional cerium-doped microsheet glasses (of appropriate thickness) that are usually attached with Dow Corning DC 93-500 silicone adhesive. In practice, these cover glasses and adhesive do not cover the cell edges. Finally, in the SLA, the entire cell and cell edges are fully encapsulated by a cover glass that overhangs the cell perimeter and the silicone adhesive covers the cell edges providing a sealed environment. These three types of blanket technology have been tested at GRC and Auburn. The results of these tests will be described. For example, 15 modules composed of four state-of-the-art 2x4 cm GaAs solar cells with 150 pm cover glasses connected in two-cell series strings were tested at high voltage, in plasma under hypervelocity impact. A picture of one of the modules is shown in figure 1. These were prepared by standard industry practice from a major supplier and had efficiencies above 18%. The test results and other fabrication factors that influenced the tests will be presented. In addition, results for SLA segments tested under the same conditions will be presented. Testing of thin film blankets at GRC will also be presented. Figure 1 : Typical GaAs Solar Cell Module These results will show significant differences in resistance to arcing that are directly related to array design and manufacturing procedures. Finally, the approaches for mitigating the problems uncovered by these tests will be described. These will lay the foundation for future higher voltage array operation, even including voltages above 300-600 V for direct drive SEP applications.

Chloride Anions Regulate Kinetics but Not Voltage-Sensor Qmax of the Solute Carrier SLC26a5.

PubMed

Santos-Sacchi, Joseph; Song, Lei

2016-06-07

In general, SLC26 solute carriers serve to transport a variety of anions across biological membranes. However, prestin (SLC26a5) has evolved, now serving as a motor protein in outer hair cells (OHCs) of the mammalian inner ear and is required for cochlear amplification, a mechanical feedback mechanism to boost auditory performance. The mechanical activity of the OHC imparted by prestin is driven by voltage and controlled by anions, chiefly intracellular chloride. Current opinion is that chloride anions control the Boltzmann characteristics of the voltage sensor responsible for prestin activity, including Qmax, the total sensor charge moved within the membrane, and Vh, a measure of prestin's operating voltage range. Here, we show that standard narrow-band, high-frequency admittance measures of nonlinear capacitance (NLC), an alternate representation of the sensor's charge-voltage (Q-V) relationship, is inadequate for assessment of Qmax, an estimate of the sum of unitary charges contributed by all voltage sensors within the membrane. Prestin's slow transition rates and chloride-binding kinetics adversely influence these estimates, contributing to the prevalent concept that intracellular chloride level controls the quantity of sensor charge moved. By monitoring charge movement across frequency, using measures of multifrequency admittance, expanded displacement current integration, and OHC electromotility, we find that chloride influences prestin kinetics, thereby controlling charge magnitude at any particular frequency of interrogation. Importantly, however, this chloride dependence vanishes as frequency decreases, with Qmax asymptoting at a level irrespective of the chloride level. These data indicate that prestin activity is significantly low-pass in the frequency domain, with important implications for cochlear amplification. We also note that the occurrence of voltage-dependent charge movements in other SLC26 family members may be hidden by inadequate interrogation timescales, and that revelation of such activity could highlight an evolutionary means for kinetic modifications within the family to address hearing requirements in mammals. Copyright © 2016 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Measurement of low radioactivity background in a high voltage cable by high resolution inductively coupled plasma mass spectrometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vacri, M. L. di; Nisi, S.; Balata, M.

2013-08-08

The measurement of naturally occurring low level radioactivity background in a high voltage (HV) cable by high resolution inductively coupled plasma mass spectrometry (HR ICP MS) is presented in this work. The measurements were performed at the Chemistry Service of the Gran Sasso National Laboratory. The contributions to the radioactive background coming from the different components of the heterogeneous material were separated. Based on the mass fraction of the cable, the whole contamination was calculated. The HR ICP MS results were cross-checked by gamma ray spectroscopy analysis that was performed at the low background facility STELLA (Sub Terranean Low Levelmore » Assay) of the LNGS underground lab using HPGe detectors.« less

The characteristics of electrical trees in the inner and outer layers of different voltage rating XLPE cable insulation

NASA Astrophysics Data System (ADS)

Xie, Ansheng; Li, Shengtao; Zheng, Xiaoquan; Chen, George

2009-06-01

The statistical initiation and propagation characteristics of electrical trees in cross-linked polyethylene (XLPE) cables with different voltage ratings from 66 to 500 kV were investigated under a constant test voltage of 50 Hz/7 kV (the 66 kV rating cable is from UK, the others from China). It was found that the characteristics of electrical trees in the inner region of 66 kV cable insulation differed considerably from those in the outer region under the same test conditions; however, no significant differences appeared in the 110 kV rating cable and above. The initiation time of electrical trees in both the inner and the outer regions of the 66 kV cable is much shorter than that in higher voltage rating cables; in addition the growth rate of electrical trees in the 66 kV cable is much larger than that in the higher voltage rating cables. By using x-ray diffraction, differential scanning calorimetry and thermogravimetry methods, it was revealed that besides the extrusion process, the molecular weight of base polymer material and its distribution are the prime factors deciding the crystallization state. The crystallization state and the impurity content are responsible for the resistance to electrical trees. Furthermore, it was proposed that big spherulites will cooperate with high impurity content in enhancing the initiation and growth processes of electrical trees via the 'synergetic effect'. Finally, dense and small spherulites, high crystallinity, high purity level of base polymer material and super-clean production processes are desirable for higher voltage rating cables.

Experimental Investigation of the Effect of the Driving Voltage of an Electroadhesion Actuator.

PubMed

Koh, Keng Huat; Sreekumar, M; Ponnambalam, S G

2014-06-25

This paper investigates the effect of driving voltage on the attachment force of an electroadhesion actuator, as the existing literature on the saturation of the adhesive force at a higher electric field is incomplete. A new type of electroadhesion actuator using normally available materials, such as aluminum foil, PVC tape and a silicone rubber sheet used for keyboard protection, has been developed with a simple layered structure that is capable of developing adhesive force consistently. The developed actuator is subjected to the experiment for the evaluation of various test surfaces; aluminum, brick, ceramic, concrete and glass. The driving high voltage is varied in steps to determine the characteristics of the output holding force. Results show a quadratic relation between F (adhesion force) and V (driving voltage) within the 2 kV range. After this range, the F - V responses consistently show a saturation trend at high electric fields. Next, the concept of the leakage current that can occur in the dielectric material and the corona discharge through air has been introduced. Results show that the voltage level, which corresponds to the beginning of the supply current, matches well with the beginning of the force saturation. With the confirmation of this hypothesis, a working model for electroadhesion actuation is proposed. Based on the experimental results, it is proposed that such a kind of actuator can be driven within a range of optimum high voltage to remain electrically efficient. This practice is recommended for the future design, development and characterization of electroadhesion actuators for robotic applications.

Experimental Investigation of the Effect of the Driving Voltage of an Electroadhesion Actuator

PubMed Central

Koh, Keng Huat; Sreekumar, M.; Ponnambalam, S. G.

2014-01-01

This paper investigates the effect of driving voltage on the attachment force of an electroadhesion actuator, as the existing literature on the saturation of the adhesive force at a higher electric field is incomplete. A new type of electroadhesion actuator using normally available materials, such as aluminum foil, PVC tape and a silicone rubber sheet used for keyboard protection, has been developed with a simple layered structure that is capable of developing adhesive force consistently. The developed actuator is subjected to the experiment for the evaluation of various test surfaces; aluminum, brick, ceramic, concrete and glass. The driving high voltage is varied in steps to determine the characteristics of the output holding force. Results show a quadratic relation between F (adhesion force) and V (driving voltage) within the 2 kV range. After this range, the F-V responses consistently show a saturation trend at high electric fields. Next, the concept of the leakage current that can occur in the dielectric material and the corona discharge through air has been introduced. Results show that the voltage level, which corresponds to the beginning of the supply current, matches well with the beginning of the force saturation. With the confirmation of this hypothesis, a working model for electroadhesion actuation is proposed. Based on the experimental results, it is proposed that such a kind of actuator can be driven within a range of optimum high voltage to remain electrically efficient. This practice is recommended for the future design, development and characterization of electroadhesion actuators for robotic applications. PMID:28788114

Conceptual definition of a high voltage power supply test facility

NASA Technical Reports Server (NTRS)

Biess, John J.; Chu, Teh-Ming; Stevens, N. John

1989-01-01

NASA Lewis Research Center is presently developing a 60 GHz traveling wave tube for satellite cross-link communications. The operating voltage for this new tube is - 20 kV. There is concern about the high voltage insulation system and NASA is planning a space station high voltage experiment that will demonstrate both the 60 GHz communications and high voltage electronics technology. The experiment interfaces, requirements, conceptual design, technology issues and safety issues are determined. A block diagram of the high voltage power supply test facility was generated. It includes the high voltage power supply, the 60 GHz traveling wave tube, the communications package, the antenna package, a high voltage diagnostics package and a command and data processor system. The interfaces with the space station and the attached payload accommodations equipment were determined. A brief description of the different subsystems and a discussion of the technology development needs are presented.

A very low noise, high accuracy, programmable voltage source for low frequency noise measurements.

PubMed

Scandurra, Graziella; Giusi, Gino; Ciofi, Carmine

2014-04-01

In this paper an approach for designing a programmable, very low noise, high accuracy voltage source for biasing devices under test in low frequency noise measurements is proposed. The core of the system is a supercapacitor based two pole low pass filter used for filtering out the noise produced by a standard DA converter down to 100 mHz with an attenuation in excess of 40 dB. The high leakage current of the supercapacitors, however, introduces large DC errors that need to be compensated in order to obtain high accuracy as well as very low output noise. To this end, a proper circuit topology has been developed that allows to considerably reduce the effect of the supercapacitor leakage current on the DC response of the system while maintaining a very low level of output noise. With a proper design an output noise as low as the equivalent input voltage noise of the OP27 operational amplifier, used as the output buffer of the system, can be obtained with DC accuracies better that 0.05% up to the maximum output of 8 V. The expected performances of the proposed voltage source have been confirmed both by means of SPICE simulations and by means of measurements on actual prototypes. Turn on and stabilization times for the system are of the order of a few hundred seconds. These times are fully compatible with noise measurements down to 100 mHz, since measurement times of the order of several tens of minutes are required in any case in order to reduce the statistical error in the measured spectra down to an acceptable level.

A very low noise, high accuracy, programmable voltage source for low frequency noise measurements

NASA Astrophysics Data System (ADS)

Scandurra, Graziella; Giusi, Gino; Ciofi, Carmine

2014-04-01

In this paper an approach for designing a programmable, very low noise, high accuracy voltage source for biasing devices under test in low frequency noise measurements is proposed. The core of the system is a supercapacitor based two pole low pass filter used for filtering out the noise produced by a standard DA converter down to 100 mHz with an attenuation in excess of 40 dB. The high leakage current of the supercapacitors, however, introduces large DC errors that need to be compensated in order to obtain high accuracy as well as very low output noise. To this end, a proper circuit topology has been developed that allows to considerably reduce the effect of the supercapacitor leakage current on the DC response of the system while maintaining a very low level of output noise. With a proper design an output noise as low as the equivalent input voltage noise of the OP27 operational amplifier, used as the output buffer of the system, can be obtained with DC accuracies better that 0.05% up to the maximum output of 8 V. The expected performances of the proposed voltage source have been confirmed both by means of SPICE simulations and by means of measurements on actual prototypes. Turn on and stabilization times for the system are of the order of a few hundred seconds. These times are fully compatible with noise measurements down to 100 mHz, since measurement times of the order of several tens of minutes are required in any case in order to reduce the statistical error in the measured spectra down to an acceptable level.

DOE Office of Scientific and Technical Information (OSTI.GOV)

King, M. P.; Kaplar, R. J.; Dickerson, J. R.

Electrical performance and characterization of deep levels in vertical GaN P-i-N diodes grown on low threading dislocation density (~10 4 –10 6 cm –2) bulk GaN substrates are investigated. The lightly doped n drift region of these devices is observed to be highly compensated by several prominent deep levels detected using deep level optical spectroscopy at E c-2.13, 2.92, and 3.2 eV. A combination of steady-state photocapacitance and lighted capacitance-voltage profiling indicates the concentrations of these deep levels to be N t = 3 × 10 12, 2 × 10 15, and 5 × 10 14 cm –3, respectively. Themore » E c-2.92 eV level is observed to be the primary compensating defect in as-grown n-type metal-organic chemical vapor deposition GaN, indicating this level acts as a limiting factor for achieving controllably low doping. The device blocking voltage should increase if compensating defects reduce the free carrier concentration of the n drift region. Understanding the incorporation of as-grown and native defects in thick n-GaN is essential for enabling large V BD in the next-generation wide-bandgap power semiconductor devices. Furthermore, controlling the as-grown defects induced by epitaxial growth conditions is critical to achieve blocking voltage capability above 5 kV.« less

Multi-KW dc distribution system technology research study

NASA Technical Reports Server (NTRS)

Dawson, S. G.

1978-01-01

The Multi-KW DC Distribution System Technology Research Study is the third phase of the NASA/MSFC study program. The purpose of this contract was to complete the design of the integrated technology test facility, provide test planning, support test operations and evaluate test results. The subjet of this study is a continuation of this contract. The purpose of this continuation is to study and analyze high voltage system safety, to determine optimum voltage levels versus power, to identify power distribution system components which require development for higher voltage systems and finally to determine what modifications must be made to the Power Distribution System Simulator (PDSS) to demonstrate 300 Vdc distribution capability.

SDVSRM - a new SSRM based technique featuring dynamically adjusted, scanner synchronized sample voltages for measurement of actively operated devices.

PubMed

Doering, Stefan; Wachowiak, Andre; Roetz, Hagen; Eckl, Stefan; Mikolajick, Thomas

2018-06-01

Scanning spreading resistance microscopy (SSRM) with its high spatial resolution and high dynamic signal range is a powerful tool for two-dimensional characterization of semiconductor dopant areas. However, the application of the method is limited to devices in equilibrium condition, as the investigation of actively operated devices would imply potential differences within the device, whereas SSRM relies on a constant voltage difference between sample surface and probe tip. Furthermore, the standard preparation includes short circuiting of all device components, limiting applications to devices in equilibrium condition. In this work scanning dynamic voltage spreading resistance microscopy (SDVSRM), a new SSRM based two pass atomic force microscopy (AFM) technique is introduced, overcoming these limitations. Instead of short circuiting the samples during preparation, wire bond devices are used allowing for active control of the individual device components. SDVSRM consists of two passes. In the first pass the local sample surface voltage dependent on the dc biases applied to the components of the actively driven device is measured as in scanning voltage microscopy (SVM). The local spreading resistance is measured within the second pass, in which the afore obtained local surface voltage is used to dynamically adjust the terminal voltages of the device under test. This is done in a way that the local potential difference across the nano-electrical contact matches the software set SSRM measurement voltage, and at the same time, the internal voltage differences within the device under test are maintained. In this work the proof of the concept could be demonstrated by obtaining spreading resistance data of an actively driven photodiode test device. SDVSRM adds a higher level of flexibility in general to SSRM, as occurring differences in cross section surface voltage are taken into account. These differences are immanent for actively driven devices, but can also be present at standard, short circuited samples. Therefore, SDVSRM could improve the characterization under equilibrium conditions as well. Copyright © 2018. Published by Elsevier B.V.

Measuring the upset of CMOS and TTL due to HPM-signals

NASA Astrophysics Data System (ADS)

Esser, N.; Smailus, B.

2004-05-01

To measure the performance of electronic components when stressed by High Power Microwave signals a setup was designed and tested which allows a well-defined voltage signal to enter the component during normal operation, and to discriminate its effect on the component. The microwave signal is fed to the outside conductor of a coaxial cable and couples into the inner signal line connected to the device under test (DUT). The disturbing HF-signal is transferred almost independent from frequency to maintain the pulse shape in the time domain. The configuration designed to perform a TEM-coupling within a 50 Ohm system prevents the secondary system from feeding back to the primary system and, due to the geometrical parameters chosen, the coupling efficiency is as high as 50-90%. Linear dimensions and terminations applied allow for pulses up to a width of 12ns and up to a voltage level of 4-5 kV on the outside conductor. These pulse parameters proved to be sufficient to upset the DUTs tested so far. In more than 400 measurements a rectangular pulse of increasing voltage level was applied to different types of CMOS and TTL until the individual DUT was damaged. As well the pulse width (3, 6 or 12 ns) and its polarity were varied in single-shot or repetitive-shot experiments (500 shots per voltage at a repetition rate of 3 Hz). The state of the DUT was continuously monitored by measuring both the current of the DUT circuit and that of the oscillator providing the operating signal for the DUT. The results show a very good reproducibility within a set of identical samples, remarkable differences between manufacturers and lower thresholds for repetitive testing, which indicates a memory effect of the DUT to exist for voltage levels significantly below the single-shot threshold.

Ion extraction capabilities of two-grid accelerator systems. M.S. Thesis

NASA Technical Reports Server (NTRS)

Rovang, D. C.; Wilbur, P. J.

1984-01-01

An experimental investigation into the ion extraction capabilities of two-grid accelerator systems common to electrostatic ion thrusters is described. This work resulted in a large body of experimental data which facilitates the selection of the accelerator system geometries and operating parameters necessary to maximize the extracted ion current. Results suggest that the impingement-limited perveance is not dramatically affected by reductions in screen hole diameter to 0.5 mm. Impingement-limited performance is shown to depend most strongly on grid separation distance, accelerator hole diameter ratio, the discharge-to-total accelerating voltage ratio, and the net-to-total accelerating voltage ratio. Results obtained at small grid separation ratios suggest a new grid operating condition where high beam current per hole levels are achieved at a specified net accelerating voltage. It is shown that this operating condition is realized at an optimum ratio of net-to-total accelerating voltage ratio which is typically quite high. The apparatus developed for this study is also shown to be well suited measuring the electron backstreaming and electrical breakdown characteristics of two-grid accelerator systems.

High density associative memory

NASA Technical Reports Server (NTRS)

Moopenn, Alexander W. (Inventor); Thakoor, Anilkumar P. (Inventor); Daud, Taher (Inventor); Lambe, John J. (Inventor)

1989-01-01

A multi-layered, thin-film, digital memory having associative recall. There is a first memory matrix and a second memory matrix. Each memory matrix comprises, a first layer comprising a plurality of electrically separated row conductors; a second layer comprising a plurality of electrically separated column conductors intersecting but electrically separated from the row conductors; and, a plurality of resistance elements electrically connected between the row condutors and the column conductors at respective intersections of the row conductors and the column conductors, each resistance element comprising, in series, a first resistor of sufficiently high ohmage to conduct a sensible element current therethrough with virtually no heat-generating power consumption when a low voltage as employed in thin-film applications is applied thereacross and a second resistor of sufficiently high ohmage to conduct no sensible current therethrough when a low voltage as employed in thin-film applications is applied thereacross, the second resistor having the quality of breaking down to create a short therethrough upon the application of a breakdown level voltage across the first and second resistors.

Oil leakage detection for electric power equipment based on ultraviolet fluorescence effect

NASA Astrophysics Data System (ADS)

Zhang, Jing; Wang, Jian-hui; Xu, Bin; Huang, Zhi-dong; Huang, Lan-tao

2018-03-01

This paper presents a method to detect the oil leakage of high voltage power equipment based on ultraviolet fluorescence effect. The method exploits the principle that the insulating oil has the fluorescent effect under the irradiation of specific ultraviolet light. The emission spectrum of insulating oil under excitation light with different wavelengths is measured and analyzed first. On this basis, a portable oil leakage detective device for high voltage power equipment is designed and developed with a selected 365 nm ultraviolet as the excitation light and the low light level camera as the fluorescence image collector. Then, the feasibility of the proposed method and device in different conditions is experimentally verified in the laboratory environment. Finally, the developed oil leakage detective device is applied to 500 kV Xiamen substation and Quanzhou substation. And the results show that the device can detect the oil leakage of high voltage electrical equipment quickly and conveniently even under the condition of a slight oil leakage especially in the low light environment.

Coiled transmission line pulse generators

DOEpatents

McDonald, Kenneth Fox

2010-11-09

Methods and apparatus are provided for fabricating and constructing solid dielectric "Coiled Transmission Line" pulse generators in radial or axial coiled geometries. The pour and cure fabrication process enables a wide variety of geometries and form factors. The volume between the conductors is filled with liquid blends of monomers, polymers, oligomers, and/or cross-linkers and dielectric powders; and then cured to form high field strength and high dielectric constant solid dielectric transmission lines that intrinsically produce ideal rectangular high voltage pulses when charged and switched into matched impedance loads. Voltage levels may be increased by Marx and/or Blumlein principles incorporating spark gap or, preferentially, solid state switches (such as optically triggered thyristors) which produce reliable, high repetition rate operation. Moreover, these Marxed pulse generators can be DC charged and do not require additional pulse forming circuitry, pulse forming lines, transformers, or an a high voltage spark gap output switch. The apparatus accommodates a wide range of voltages, impedances, pulse durations, pulse repetition rates, and duty cycles. The resulting mobile or flight platform friendly cylindrical geometric configuration is much more compact, light-weight, and robust than conventional linear geometries, or pulse generators constructed from conventional components. Installing additional circuitry may accommodate optional pulse shape improvements. The Coiled Transmission Lines can also be connected in parallel to decrease the impedance, or in series to increase the pulse length.

High-voltage, high-current, solid-state closing switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Focia, Ronald Jeffrey

2017-08-22

A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

Secondary ion collection and transport system for ion microprobe

DOEpatents

Ward, James W.; Schlanger, Herbert; McNulty, Jr., Hugh; Parker, Norman W.

1985-01-01

A secondary ion collection and transport system, for use with an ion microprobe, which is very compact and occupies only a small working distance, thereby enabling the primary ion beam to have a short focal length and high resolution. Ions sputtered from the target surface by the primary beam's impact are collected between two arcuate members having radii of curvature and applied voltages that cause only ions within a specified energy band to be collected. The collected ions are accelerated and focused in a transport section consisting of a plurality of spaced conductive members which are coaxial with and distributed along the desired ion path. Relatively high voltages are applied to alternate transport sections to produce accelerating electric fields sufficient to transport the ions through the section to an ion mass analyzer, while lower voltages are applied to the other transport sections to focus the ions and bring their velocity to a level compatible with the analyzing apparatus.

Reliability of High-Voltage Tantalum Capacitors. Parts 3 and 4)

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2010-01-01

Weibull grading test is a powerful technique that allows selection and reliability rating of solid tantalum capacitors for military and space applications. However, inaccuracies in the existing method and non-adequate acceleration factors can result in significant, up to three orders of magnitude, errors in the calculated failure rate of capacitors. This paper analyzes deficiencies of the existing technique and recommends more accurate method of calculations. A physical model presenting failures of tantalum capacitors as time-dependent-dielectric-breakdown is used to determine voltage and temperature acceleration factors and select adequate Weibull grading test conditions. This model is verified by highly accelerated life testing (HALT) at different temperature and voltage conditions for three types of solid chip tantalum capacitors. It is shown that parameters of the model and acceleration factors can be calculated using a general log-linear relationship for the characteristic life with two stress levels.

A High Voltage Ratio and Low Ripple Interleaved DC-DC Converter for Fuel Cell Applications

PubMed Central

Chang, Long-Yi; Chao, Kuei-Hsiang; Chang, Tsang-Chih

2012-01-01

This paper proposes a high voltage ratio and low ripple interleaved boost DC-DC converter, which can be used to reduce the output voltage ripple. This converter transfers the low DC voltage of fuel cell to high DC voltage in DC link. The structure of the converter is parallel with two voltage-doubler boost converters by interleaving their output voltages to reduce the voltage ripple ratio. Besides, it can lower the current stress for the switches and inductors in the system. First, the PSIM software was used to establish a proton exchange membrane fuel cell and a converter circuit model. The simulated and measured results of the fuel cell output characteristic curve are made to verify the correctness of the established simulation model. In addition, some experimental results are made to validate the effectiveness in improving output voltage ripple of the proposed high voltage ratio interleaved boost DC-DC converters. PMID:23365536

A high voltage ratio and low ripple interleaved DC-DC converter for fuel cell applications.

PubMed

Chang, Long-Yi; Chao, Kuei-Hsiang; Chang, Tsang-Chih

2012-01-01

This paper proposes a high voltage ratio and low ripple interleaved boost DC-DC converter, which can be used to reduce the output voltage ripple. This converter transfers the low DC voltage of fuel cell to high DC voltage in DC link. The structure of the converter is parallel with two voltage-doubler boost converters by interleaving their output voltages to reduce the voltage ripple ratio. Besides, it can lower the current stress for the switches and inductors in the system. First, the PSIM software was used to establish a proton exchange membrane fuel cell and a converter circuit model. The simulated and measured results of the fuel cell output characteristic curve are made to verify the correctness of the established simulation model. In addition, some experimental results are made to validate the effectiveness in improving output voltage ripple of the proposed high voltage ratio interleaved boost DC-DC converters.

Resonant tunneling through electronic trapping states in thin MgO magnetic junctions.

PubMed

Teixeira, J M; Ventura, J; Araujo, J P; Sousa, J B; Wisniowski, P; Cardoso, S; Freitas, P P

2011-05-13

We report an inelastic electron tunneling spectroscopy study on MgO magnetic junctions with thin barriers (0.85-1.35 nm). Inelastic electron tunneling spectroscopy reveals resonant electronic trapping within the barrier for voltages V>0.15  V. These trapping features are associated with defects in the barrier crystalline structure, as confirmed by high-resolution transmission electron microscopy. Such defects are responsible for resonant tunneling due to energy levels that are formed in the barrier. A model was applied to determine the average location and energy level of the traps, indicating that they are mostly located in the middle of the MgO barrier, in accordance with the high-resolution transmission electron microscopy data and trap-assisted tunneling conductance theory. Evidence of the influence of trapping on the voltage dependence of tunnel magnetoresistance is shown.

Development of Multi-Functional Voltage Restore System

NASA Astrophysics Data System (ADS)

Suzuki, Satoshi; Ueda, Yoshinobu; Koganezawa, Takehisa; Ogihara, Yoshinori; Mori, Kenjiro; Fukazu, Naoaki

Recently, with the dawn of the electric deregulation, the installation of distributed generation with power electronics device has grown. This current causes a greater concern of power quality, primarily voltage disturbance for power companies, and their interest in power quality is peaking. Utilities are also interested in keeping their customers satisfied, as well as keeping them on-line and creating more revenue for the utility. As a countermeasure against the above surroundings, a variety type of devices based on power electronics has been developed to protect customers' load from power line voltage disturbance. One of them is the series type voltage restore. The series device is an active device, designed to provide a pure sinusoidal load voltage at all times, correcting voltage disturbance. Series type device compensates for voltage anomalies by inserting the ‘missing’ voltage onto the line through insertion transformer and inverter. This paper shows the setting guideline of target level to compensate voltage disturbance, that is, voltage dip, voltage harmonics, voltage imbalance and voltage flicker, and the design approach of the prototype of series voltage restores to accomplish the required compensation level. The prototype system gives satisfactory compensation performance through evaluation tests, which confirm the validity and effectiveness of the system.

High voltage-high power components for large space power distribution systems

NASA Technical Reports Server (NTRS)

Renz, D. D.

1984-01-01

Space power components including a family of bipolar power switching transistors, fast switching power diodes, heat pipe cooled high frequency transformers and inductors, high frequency conduction cooled transformers, high power-high frequency capacitors, remote power controllers and rotary power transfer devices were developed. Many of these components such as the power switching transistors, power diodes and the high frequency capacitor are commercially available. All the other components were developed to the prototype level. The dc/dc series resonant converters were built to the 25 kW level.

An electroviscous damper

NASA Technical Reports Server (NTRS)

Nikolajsen, Jorgen L.; Hoque, M. S.

1989-01-01

A new type of vibration damper for rotor systems was developed and tested. The damper contains electroviscous fluid which solidifies and provides Coulomb damping when an electric voltage is imposed across the fluid. The damping capacity is controlled by the voltage. The damper was incorporated in a flexible rotor system and found to be able to damp out high levels of unbalanced excitation. Other proven advantages include controllability, simplicity, and no requirement for oil supply. Still unconfirmed are the capabilities to eliminate critical speeds and to suppress rotor instabilities.

An LED solar simulator for student labs

NASA Astrophysics Data System (ADS)

González, Manuel I.

2017-05-01

Measuring voltage-current and voltage-power curves of a photovoltaic module is a nice experiment for high school and undergraduate students. In labs where real sunlight is not available this experiment requires a solar simulator. A prototype of a simulator using LED lamps has been manufactured and tested, and a comparison with classical halogen simulators has been performed. It is found that LED light offers lower levels of irradiance, but much better performance in terms of module output for a given irradiance.

Study of Lead as a Source X-ray Radiation Protection with an Analysis Grey Level Image

NASA Astrophysics Data System (ADS)

Susilo; Rahma, I. N.; Mosik; Masturi

2017-04-01

X-ray utilization in the medical field still has a potential danger for the human. This occurs when exposure to x-ray radiation received exceeds the dose limit value. It required a radiation shielding to prevent the hazard, and lead is one of the metals usually used as x-ray radiation shield. This work aims to determine the metallic lead properties to find out of the step wedge lead radiograph image. The instruments used are the plane x-ray, digital radiography system and personal computer installed by MATLAB, while the material is step wedge lead. The image of radiograph was analysed using GUI applications on MATLAB software to determine the values of grey level from the image and the optical density of the radiograph image. The results showed the greater optical density, the higher the image contrast, and the value of optical density in the image is inversely proportional to the voltage x-ray since the value of grey level at high voltage is smaller than that of at low voltage.

Superluminescence from an optically pumped molecular tunneling junction by injection of plasmon induced hot electrons

PubMed Central

Braun, Kai; Wang, Xiao; Kern, Andreas M; Adler, Hilmar; Peisert, Heiko; Chassé, Thomas; Zhang, Dai

2015-01-01

Summary Here, we demonstrate a bias-driven superluminescent point light-source based on an optically pumped molecular junction (gold substrate/self-assembled molecular monolayer/gold tip) of a scanning tunneling microscope, operating at ambient conditions and providing almost three orders of magnitude higher electron-to-photon conversion efficiency than electroluminescence induced by inelastic tunneling without optical pumping. A positive, steadily increasing bias voltage induces a step-like rise of the Stokes shifted optical signal emitted from the junction. This emission is strongly attenuated by reversing the applied bias voltage. At high bias voltage, the emission intensity depends non-linearly on the optical pump power. The enhanced emission can be modelled by rate equations taking into account hole injection from the tip (anode) into the highest occupied orbital of the closest substrate-bound molecule (lower level) and radiative recombination with an electron from above the Fermi level (upper level), hence feeding photons back by stimulated emission resonant with the gap mode. The system reflects many essential features of a superluminescent light emitting diode. PMID:26171286

A Novel Series Connected Batteries State of High Voltage Safety Monitor System for Electric Vehicle Application

PubMed Central

Jiaxi, Qiang; Lin, Yang; Jianhui, He; Qisheng, Zhou

2013-01-01

Batteries, as the main or assistant power source of EV (Electric Vehicle), are usually connected in series with high voltage to improve the drivability and energy efficiency. Today, more and more batteries are connected in series with high voltage, if there is any fault in high voltage system (HVS), the consequence is serious and dangerous. Therefore, it is necessary to monitor the electric parameters of HVS to ensure the high voltage safety and protect personal safety. In this study, a high voltage safety monitor system is developed to solve this critical issue. Four key electric parameters including precharge, contact resistance, insulation resistance, and remaining capacity are monitored and analyzed based on the equivalent models presented in this study. The high voltage safety controller which integrates the equivalent models and control strategy is developed. By the help of hardware-in-loop system, the equivalent models integrated in the high voltage safety controller are validated, and the online electric parameters monitor strategy is analyzed and discussed. The test results indicate that the high voltage safety monitor system designed in this paper is suitable for EV application. PMID:24194677

A novel series connected batteries state of high voltage safety monitor system for electric vehicle application.

PubMed

Jiaxi, Qiang; Lin, Yang; Jianhui, He; Qisheng, Zhou

2013-01-01

Batteries, as the main or assistant power source of EV (Electric Vehicle), are usually connected in series with high voltage to improve the drivability and energy efficiency. Today, more and more batteries are connected in series with high voltage, if there is any fault in high voltage system (HVS), the consequence is serious and dangerous. Therefore, it is necessary to monitor the electric parameters of HVS to ensure the high voltage safety and protect personal safety. In this study, a high voltage safety monitor system is developed to solve this critical issue. Four key electric parameters including precharge, contact resistance, insulation resistance, and remaining capacity are monitored and analyzed based on the equivalent models presented in this study. The high voltage safety controller which integrates the equivalent models and control strategy is developed. By the help of hardware-in-loop system, the equivalent models integrated in the high voltage safety controller are validated, and the online electric parameters monitor strategy is analyzed and discussed. The test results indicate that the high voltage safety monitor system designed in this paper is suitable for EV application.

Performance analysis of electronic power transformer based on neuro-fuzzy controller.

PubMed

Acikgoz, Hakan; Kececioglu, O Fatih; Yildiz, Ceyhun; Gani, Ahmet; Sekkeli, Mustafa

2016-01-01

In recent years, electronic power transformer (EPT), which is also called solid state transformer, has attracted great interest and has been used in place of the conventional power transformers. These transformers have many important functions as high unity power factor, low harmonic distortion, constant DC bus voltage, regulated output voltage and compensation capability. In this study, proposed EPT structure contains a three-phase pulse width modulation rectifier that converts 800 Vrms AC to 2000 V DC bus at input stage, a dual active bridge converter that provides 400 V DC bus with 5:1 high frequency transformer at isolation stage and a three-phase two level inverter that is used to obtain AC output at output stage. In order to enhance dynamic performance of EPT structure, neuro fuzzy controllers which have durable and nonlinear nature are used in input and isolation stages instead of PI controllers. The main aim of EPT structure with the proposed controller is to improve the stability of power system and to provide faster response against disturbances. Moreover, a number of simulation results are carried out to verify EPT structure designed in MATLAB/Simulink environment and to analyze compensation ability for voltage harmonics, voltage flicker and voltage sag/swell conditions.

Advanced Initiation Systems Manufacturing Level 2 Milestone Completion Summary

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chow, R; Schmidt, M

2009-10-01

Milestone Description - Advanced Initiation Systems Detonator Design and Prototype. Milestone Grading Criteria - Design new generation chip slapper detonator and manufacture a prototype using advanced manufacturing processes, such as all-dry chip metallization and solvent-less flyer coatings. The advanced processes have been developed for manufacturing detonators with high material compatibility and reliability to support future LEPs, e.g. the B61, and new weapons systems. Perform velocimetry measurements to determine slapper velocity as a function of flight distance. A prototype detonator assembly and stripline was designed for low-energy chip slappers. Pictures of the prototype detonator and stripline are shown. All-dry manufacturing processesmore » were used to address compatibility issues. KCP metallized the chips in a physical vapor deposition system through precision-aligned shadow masks. LLNL deposited a solvent-less polyimide flyer with a processes called SLIP, which stands for solvent-less vapor deposition followed by in-situ polymerization. LANL manufactured the high-surface-area (HSA) high explosive (HE) pellets. Test fires of two chip slapper designs, radius and bowtie, were performed at LLNL in the High Explosives Application Facility (HEAF). Test fires with HE were conducted to establish the threshold firing voltages. pictures of the chip slappers before and after test fires are shown. Velocimetry tests were then performed to obtain slapper velocities at or above the threshold firing voltages. Figure 5 shows the slapper velocity as a function of distance and time at the threshold voltage, for both radius and bowtie bridge designs. Both designs were successful at initiating the HE at low energy levels. Summary of Accomplishments are: (1) All-dry process for chip manufacture developed; (2) Solventless process for slapper materials developed; (3) High-surface area explosive pellets developed; (4) High performance chip slappers developed; (5) Low-energy chip slapper detonator designs; and (6) Low-voltage threshold chip slapper detonator demonstrated.« less

A Single Phase 7-Level Cascade Inverter Topology with Reduced Number of Switches on Resistive Load by Using PWM

NASA Astrophysics Data System (ADS)

Hamzah, H. H.; Ponniran, A.; Kasiran, A. N.; Harimon, M. A.; Gendum, D. A.; Yatim, M. H.

2018-04-01

This paper discussing design principles of inverter structure with reduced number of semiconductor devices of seven levels symmetric H-bridge multilevel inverter (MLI) topology. The aim of this paper is to design an inverter circuit with reduction of semiconductor losses, converter size and development cost. The H-bridge and auxiliary structures were considered in order to achieve seven levels output voltage. The performance of design circuit is compared with conventional seven levels structure in terms of voltage output. The circuit development consists of seven switches and three diode. A basic modulation technique is used to confirm the designed circuit. The results show that the designed circuit is able to convert seven level output voltage with low total harmonics distortion (THD) in voltage fundamental output. According to the results, fundamental output voltage is increased up to 8.314%, and the THD is decreased up to 0.81% compared to the conventional seven level inverter.

High voltage variable diameter insulator

DOEpatents

Vanecek, David L.; Pike, Chester D.

1984-01-01

A high voltage feedthrough assembly (10) having a tubular insulator (15) extending between the ground plane ring (16) and the high voltage ring (30). The insulator (15) is made of Pyrex and decreases in diameter from the ground plane ring (16) to the high voltage ring (30), producing equipotential lines almost perpendicular to the wall (27) of the insulator (15) to optimize the voltage-holding capability of the feedthrough assembly (10).

Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer

NASA Astrophysics Data System (ADS)

Shen, Yung-Shao; Chen, Kuen-Yi; Chen, Po-Chun; Chen, Teng-Chuan; Wu, Yung-Hsien

2017-03-01

Crystalline ZrTiO4 (ZTO) in orthorhombic phase with different plasma treatments was explored as the charge-trapping layer for low-voltage operation flash memory. For ZTO without any plasma treatment, even with a high k value of 45.2, it almost cannot store charges due the oxygen vacancies-induced shallow-level traps that make charges easy to tunnel back to Si substrate. With CF4 plasma treatment, charge storage is still not improved even though incorporated F atoms could introduce additional traps since the F atoms disappear during the subsequent thermal annealing. On the contrary, nevertheless the k value degrades to 40.8, N2O plasma-treated ZTO shows promising performance in terms of 5-V hysteresis memory window by ±7-V sweeping voltage, 2.8-V flatband voltage shift by programming at +7 V for 100 μs, negligible memory window degradation with 105 program/erase cycles and 81.8% charge retention after 104 sec at 125 °C. These desirable characteristics are ascribed not only to passivation of oxygen vacancies-related shallow-level traps but to introduction of a large amount of deep-level bulk charge traps which have been proven by confirming thermally excited process as the charge loss mechanism and identifying traps located at energy level beneath ZTO conduction band by 0.84 eV~1.03 eV.

Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer.

PubMed

Shen, Yung-Shao; Chen, Kuen-Yi; Chen, Po-Chun; Chen, Teng-Chuan; Wu, Yung-Hsien

2017-03-08

Crystalline ZrTiO 4 (ZTO) in orthorhombic phase with different plasma treatments was explored as the charge-trapping layer for low-voltage operation flash memory. For ZTO without any plasma treatment, even with a high k value of 45.2, it almost cannot store charges due the oxygen vacancies-induced shallow-level traps that make charges easy to tunnel back to Si substrate. With CF 4 plasma treatment, charge storage is still not improved even though incorporated F atoms could introduce additional traps since the F atoms disappear during the subsequent thermal annealing. On the contrary, nevertheless the k value degrades to 40.8, N 2 O plasma-treated ZTO shows promising performance in terms of 5-V hysteresis memory window by ±7-V sweeping voltage, 2.8-V flatband voltage shift by programming at +7 V for 100 μs, negligible memory window degradation with 10 5 program/erase cycles and 81.8% charge retention after 10 4  sec at 125 °C. These desirable characteristics are ascribed not only to passivation of oxygen vacancies-related shallow-level traps but to introduction of a large amount of deep-level bulk charge traps which have been proven by confirming thermally excited process as the charge loss mechanism and identifying traps located at energy level beneath ZTO conduction band by 0.84 eV~1.03 eV.

The performance of cable braids and terminations to lightning induced transients

NASA Technical Reports Server (NTRS)

Crofts, David

1991-01-01

The latest specification detailing the test waveforms for indirect lightning transients as applied to aircraft wiring systems specify very high voltages and currents. Although considerable data exists for measuring cable screen leakage using such methods as surface transfer impedance and bulk cable injection, there is little data on the likely core transient level that is likely to be induced from these threats. In particular, the new Waveform 5 at very high current levels (10 kA) is reputed to cause severe cable damage. A range of representative cables were made with various screen termination techniques and screening levels. These were tested first to determine their relative screening performance and then they were subjected to lightning transient testing to all the specified waveforms. Core voltages were measured for each test. Tests were also performed on bundles with fewer wires to determine the failure criteria with Waveform 5 and these tests also include flat conductor cables. The test showed that correctly terminated cable bundles performed well in all the tests and would provide a high level of protection to the electronic systems. The use of overbraides, provided the individual screens are well terminated, appears to be unnecessary.

30 CFR 75.804 - Underground high-voltage cables.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Underground high-voltage cables. 75.804 Section... § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance grounded systems shall be equipped with metallic shields around each power conductor with one or more...

30 CFR 75.804 - Underground high-voltage cables.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Underground high-voltage cables. 75.804 Section... § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance grounded systems shall be equipped with metallic shields around each power conductor with one or more...

30 CFR 75.804 - Underground high-voltage cables.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Underground high-voltage cables. 75.804 Section... § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance grounded systems shall be equipped with metallic shields around each power conductor with one or more...

Performance of Li-Ion Cells Under Battery Voltage Charge Control

NASA Technical Reports Server (NTRS)

Rao, Gopalakrishna M.; Vaidyanathan, Hari; Day, John H. (Technical Monitor)

2001-01-01

A study consisting of electrochemical characterization and Low-Earth-Orbit (LEO) cycling of Li-Ion cells from three vendors was initiated in 1999 to determine the cycling performance and to infuse the new technology in the future NASA missions. The 8-cell batteries included in this evaluation are prismatic cells manufactured by Mine Safety Appliances Company (MSA), cylindrical cells manufactured by SAFT and prismatic cells manufactured by Yardney Technical Products, Inc. (YTP). The three batteries were cycle tested in the LEO regime at 40% depth of discharge, and under a charge control technique that consists of battery voltage clamp with a current taper. The initial testing was conducted at 20 C; however, the batteries were cycled also intermittently at low temperatures. YTP 20 Ah cells consisted of mixed-oxide (Co and Ni) positive, graphitic carbon negative, LIPF6 salt mixed with organic carbonate solvents. The battery voltage clamp was 32 V. The low temperature cycling tests started after 4575 cycles at 20 C. The cells were not capable of cycling. at low temperature since the charge acceptance at battery level was poor. There was a cell in the battery that showed too high an end-of-charge (EOC) voltage thereby limiting the ability to charge the rest of the cells in the battery. The battery has completed 6714 cycles. SAFT 12 Ah cells consisted of mixed-oxide (Co and NO positive, graphitic carbon negative, LiPF6 salt mixed with organic carbonate solvents. The battery voltage clamp was for 30.8 V. The low temperature cycling tests started after 4594 cycles at 20 C. A cell that showed low end of discharge (EOD) and EOC voltages and three other cells that showed higher EOC voltages limited the charge acceptance at the selected voltage limit during charge. The cells were capable of cycling at 10 C and 0 C but the charge voltage limit had to be increased to 34.3 V (4.3 V per cell). The low temperature cycling may have induced poor chargeability since the voltage had to be increased to achieve the required charge input. The battery has completed 6226 cycles. MSA 10 Ah cells consisted of Co oxide positive, graphitic carbon negative, LiPF6 salt mixed with organic carbonate solvents. The battery voltage clamp was 30.8 V. The low temperature cycling tests were started after 2182 cycles at 20 C. The cells were capable of cycling at 10 C and 0 C. Like SAFT, the voltage limit on charge had to be increased to 36 V (4.5 V per cell). There was a cell (cell S/N 13) in the battery that showed poor performance features such as low EOD voltage and high EOC voltage. The battery has completed 3441 cycles. A reconditioning procedure that consisted of C15 charge to a taper current of C/100 and C/20 discharge improved the voltage behavior of SAFT and MSA cells with no significant effect on YTP cells. We have demonstrated that the charge operation with VT clamp at battery rather than at cell level is feasible for onboard Li-Ion battery operation.

Influence of high-power nonlinear consumers on electric energy losses in mining high-voltage power line

NASA Astrophysics Data System (ADS)

Averbukh, M. A.; Prasol, D. A.

2018-03-01

The article elucidates the influence of high-power nonlinear consumers on electric energy losses in a mining high-voltage power line. The object of the study was a fragment of a power supply system of a mining enterprise with hoists. The investigation has assessed the electric energy losses conditioned by nonsinusoidal currents and voltages of the power line over a single hoist operation cycle. Also, the total electric energy losses in a high-voltage power line of a mining enterprise was calculated. The energy losses due to nonsinusoidal currents and voltages over single operation cycle of the cage hoist amount to 36.358 kWh. The presence of such losses increases total technological power and energy losses in the mining high-voltage power line by approximately 5-15%. The total energy losses in the components of the mining enterprise high-voltage power line caused by nonsinusoidal voltage are significant and lead to additional expenses of the company.

Oxygen plasma immersion ion implantation treatment to enhance data retention of tungsten nanocrystal nonvolatile memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jer-Chyi, E-mail: jcwang@mail.cgu.edu.tw; Chang, Wei-Cheng; Lai, Chao-Sung, E-mail: cslai@mail.cgu.edu.tw

Data retention characteristics of tungsten nanocrystal (W-NC) memory devices using an oxygen plasma immersion ion implantation (PIII) treatment are investigated. With an increase of oxygen PIII bias voltage and treatment time, the capacitance–voltage hysteresis memory window is increased but the data retention characteristics become degraded. High-resolution transmission electron microscopy images show that this poor data retention is a result of plasma damage on the tunneling oxide layer, which can be prevented by lowering the bias voltage to 7 kV. In addition, by using the elevated temperature retention measurement technique, the effective charge trapping level of the WO{sub 3} film surrounding themore » W-NCs can be extracted. This measurement reveals that a higher oxygen PIII bias voltage and treatment time induces more shallow traps within the WO{sub 3} film, degrading the retention behavior of the W-NC memory.« less

Packet personal radiation monitor

DOEpatents

Phelps, J.E.

1988-03-31

A personal radiation monitor of the chirper type is provided for detecting ionizing radiation. A battery powered high voltage power supply is used to generate and apply a high voltage bias to a G-M tube radiation sensor. The high voltage is monitored by a low-loss sensing network which generates a feedback signal to control the high voltage power supply such that the high voltage bias is recharged to +500 VDC when the current pulses of the sensor, generated by the detection of ionizing radiatonevents, discharges the high voltage bias to +450 VDC. During the high voltage recharge period an audio transducer is activated to produce an audible ''chirp''. The rate of the ''chirps'' is controlled by the rate at which the high voltage bias is recharged, which is proportional to the radiation field intensity to which the sensor is exposed. The chirp rate sensitivity is set to be approximately 1.5 (chirps/min/MR/hr.). The G-M tube sensor is used in a current sensing mode so that the device does not paralyze in a high radiation field. 2 figs.

Packet personal radiation monitor

DOEpatents

Phelps, James E.

1989-01-01

A personal radiation monitor of the chirper type is provided for detecting ionizing radiation. A battery powered high voltage power supply is used to generate and apply a high voltage bias to a G-M tube radiation sensor. The high voltage is monitored by a low-loss sensing network which generates a feedback signal to control the high voltage power supply such that the high voltage bias is recharged to +500 VDC when the current pulses of the sensor, generated by the detection of ionizing radiation events, discharges the high voltage bias to +450 VDC. During the high voltage recharge period an audio transducer is activated to produce an audible "chirp". The rate of the "chirps" is controlled by the rate at which the high voltage bias is recharged, which is proportional to the radiation field intensity to which the sensor is exposed. The chirp rate sensitivity is set to be approximately 1.5 (chirps/min/MR/hr.). The G-M tube sensor is used in a current sensing mode so that the device does not paralyze in a high radiation field.

Single Nisoldipine-Sensitive Calcium Channels in Smooth Muscle Cells Isolated from Rabbit Mesenteric Artery

NASA Astrophysics Data System (ADS)

Worley, Jennings F.; Deitmer, Joachim W.; Nelson, Mark T.

1986-08-01

Single smooth muscle cells were enzymatically isolated from the rabbit mesenteric artery. At physiological levels of external Ca, these cells were relaxed and contracted on exposure to norepinephrine, caffeine, or high levels of potassium. The patch-clamp technique was used to measure unitary currents through single channels in the isolated cells. Single channels were selective for divalent cations and exhibited two conductance levels, 8 pS and 15 pS. Both types of channels were voltage-dependent, and channel activity occurred at potentials positive to -40 mV. The activity of both channel types was almost completely inhibited by 50 nM nisoldipine. These channels appear to be the pathways for voltage-dependent Ca influx in vascular smooth muscle and may be the targets of the clinically used dihydropyridines.

High voltage holding in the negative ion sources with cesium deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belchenko, Yu.; Abdrashitov, G.; Ivanov, A.

High voltage holding of the large surface-plasma negative ion source with cesium deposition was studied. It was found that heating of ion-optical system electrodes to temperature >100 °C facilitates the source conditioning by high voltage pulses in vacuum and by beam shots. The procedure of electrode conditioning and the data on high-voltage holding in the negative ion source with small cesium seed are described. The mechanism of high voltage holding improvement by depletion of cesium coverage is discussed.

Three-Level 48-Pulse STATCOM with Pulse Width Modulation

NASA Astrophysics Data System (ADS)

Singh, Bhim; Srinivas, Kadagala Venkata

2016-03-01

In this paper, a new control strategy of a three-level 48-pulse static synchronous compensator (STATCOM) is proposed with a constant dc link voltage and pulse width modulation at fundamental frequency switching. The proposed STATCOM is realized using eight units of three-level voltage source converters (VSCs) to form a three-level 48-pulse STATCOM. The conduction angle of each three-level VSC is modulated to control the ac converter output voltage, which controls the reactive power of the STATCOM. A fuzzy logic controller is used to control the STATCOM. The dynamic performance of the STATCOM is studied for the control of the reference reactive power, the reference terminal voltage and under the switching of inductive and capacitive loads.

The Power Behind the Controversy: Understanding Local Policy Elites' Perceptions on the Benefits and Risks Associated with High Voltage Power Line Installation in the State of Arkansas

NASA Astrophysics Data System (ADS)

Moyer, Rachael M.

Following a proposal for the installation of high voltage power lines in northwest Arkansas, a controversial policy debate emerged. Proponents of the transmission line argue that such an installation is inevitable and necessary to efficiently and reliably support the identified electric load in the region. Opponents claim that the lines will degrade the natural environment and hamper the tourism-based local economy in affected regions, notably in Ozark Mountain areas. This study seeks to understand how local policy elites perceive the benefits and risks associated with proposed transmission lines, which is a critical step in comprehending the formation and changes of related government policies. First, based upon the dual process theory of judgment, this study systematically investigates the triadic relationships between (a) more profound personal value predispositions, (b) affects and feelings, and (c) perceived benefits and risks related to the proposed installation of high voltage power lines among local policy elites in the state of Arkansas. Next, this study focuses more specifically on the role of value predispositions, specific emotional dimensions of affect heuristics, and perceptions pertaining to high voltage power line risks and benefits. Using original data collected from a statewide Internet survey of 420 local leaders and key policymakers about their opinions on the related issues, other factors claimed by previous literature, including trust, knowledge level, and demographic characteristics are considered. Analytical results suggest that grid-group cultural predispositions, as deeply held core values within local policy elites' individual belief systems, both directly and indirectly -- through affective feelings -- shape perceived utility associated with the installation of high voltage power lines. Recognizing that risk perceptions factor into policy decisions, some practical considerations for better designing policy addressing controversial issues of this nature.

Event-driven charge-coupled device design and applications therefor

NASA Technical Reports Server (NTRS)

Doty, John P. (Inventor); Ricker, Jr., George R. (Inventor); Burke, Barry E. (Inventor); Prigozhin, Gregory Y. (Inventor)

2005-01-01

An event-driven X-ray CCD imager device uses a floating-gate amplifier or other non-destructive readout device to non-destructively sense a charge level in a charge packet associated with a pixel. The output of the floating-gate amplifier is used to identify each pixel that has a charge level above a predetermined threshold. If the charge level is above a predetermined threshold the charge in the triggering charge packet and in the charge packets from neighboring pixels need to be measured accurately. A charge delay register is included in the event-driven X-ray CCD imager device to enable recovery of the charge packets from neighboring pixels for accurate measurement. When a charge packet reaches the end of the charge delay register, control logic either dumps the charge packet, or steers the charge packet to a charge FIFO to preserve it if the charge packet is determined to be a packet that needs accurate measurement. A floating-diffusion amplifier or other low-noise output stage device, which converts charge level to a voltage level with high precision, provides final measurement of the charge packets. The voltage level is eventually digitized by a high linearity ADC.

Surface interactions and high-voltage current collection

NASA Technical Reports Server (NTRS)

Mandell, M. J.; Katz, I.

1985-01-01

Spacecraft of the future will be larger and have higher power requirements than any flown to date. For several reasons, it is desirable to operate a high power system at high voltage. While the optimal voltages for many future missions are in the range 500 to 5000 volts, the highest voltage yet flown is approximately 100 volts. The NASCAP/LEO code is being developed to embody the phenomenology needed to model the environmental interactions of high voltage spacecraft. Some plasma environment are discussed. The treatment of the surface conductivity associated with emitted electrons and some simulations by NASCAP/LEO of ground based high voltage interaction experiments are described.

Voltage scheduling for low power/energy

NASA Astrophysics Data System (ADS)

Manzak, Ali

2001-07-01

Power considerations have become an increasingly dominant factor in the design of both portable and desk-top systems. An effective way to reduce power consumption is to lower the supply voltage since voltage is quadratically related to power. This dissertation considers the problem of lowering the supply voltage at (i) the system level and at (ii) the behavioral level. At the system level, the voltage of the variable voltage processor is dynamically changed with the work load. Processors with limited sized buffers as well as those with very large buffers are considered. Given the task arrival times, deadline times, execution times, periods and switching activities, task scheduling algorithms that minimize energy or peak power are developed for the processors equipped with very large buffers. A relation between the operating voltages of the tasks for minimum energy/power is determined using the Lagrange multiplier method, and an iterative algorithm that utilizes this relation is developed. Experimental results show that the voltage assignment obtained by the proposed algorithm is very close (0.1% error) to that of the optimal energy assignment and the optimal peak power (1% error) assignment. Next, on-line and off-fine minimum energy task scheduling algorithms are developed for processors with limited sized buffers. These algorithms have polynomial time complexity and present optimal (off-line) and close-to-optimal (on-line) solutions. A procedure to calculate the minimum buffer size given information about the size of the task (maximum, minimum), execution time (best case, worst case) and deadlines is also presented. At the behavioral level, resources operating at multiple voltages are used to minimize power while maintaining the throughput. Such a scheme has the advantage of allowing modules on the critical paths to be assigned to the highest voltage levels (thus meeting the required timing constraints) while allowing modules on non-critical paths to be assigned to lower voltage levels (thus reducing the power consumption). A polynomial time resource and latency constrained scheduling algorithm is developed to distribute the available slack among the nodes such that power consumption is minimum. The algorithm is iterative and utilizes the slack based on the Lagrange multiplier method.

Relating voltage and thermal safety in Li-ion battery cathodes: a high-throughput computational study.

PubMed

Jain, Anubhav; Hautier, Geoffroy; Ong, Shyue Ping; Dacek, Stephen; Ceder, Gerbrand

2015-02-28

High voltage and high thermal safety are desirable characteristics of cathode materials, but difficult to achieve simultaneously. This work uses high-throughput density functional theory computations to evaluate the link between voltage and safety (as estimated by thermodynamic O2 release temperatures) for over 1400 cathode materials. Our study indicates that a strong inverse relationship exists between voltage and safety: just over half the variance in O2 release temperature can be explained by voltage alone. We examine the effect of polyanion group, redox couple, and ratio of oxygen to counter-cation on both voltage and safety. As expected, our data demonstrates that polyanion groups improve safety when comparing compounds with similar voltages. However, a counterintuitive result of our study is that polyanion groups produce either no benefit or reduce safety when comparing compounds with the same redox couple. Using our data set, we tabulate voltages and oxidation potentials for over 105 combinations of redox couple/anion, which can be used towards the design and rationalization of new cathode materials. Overall, only a few compounds in our study, representing limited redox couple/polyanion combinations, exhibit both high voltage and high safety. We discuss these compounds in more detail as well as the opportunities for designing safe, high-voltage cathodes.

Improved resistive switching characteristics of a Pt/HfO2/Pt resistor by controlling anode interface with forming and switching polarity

NASA Astrophysics Data System (ADS)

Jung, Yong Chan; Seong, Sejong; Lee, Taehoon; Kim, Seon Yong; Park, In-Sung; Ahn, Jinho

2018-03-01

The anode interface effects on the resistive switching characteristics of Pt/HfO2/Pt resistors are investigated by changing the forming and switching polarity. Resistive switching properties are evaluated and compared with the polarity operation procedures, such as the reset voltage (Vr), set voltage (Vs), and current levels at low and high resistance states. When the same forming and switching voltage polarity are applied to the resistor, their switching parameters are widely distributed. However, the opposite forming and switching voltage polarity procedures enhance the uniformity of the switching parameters. In particular, the Vs distribution is strongly affected by the voltage polarity variation. A model is proposed based on cone-shaped filament formation through the insulator and the cone diameter at the anode interface to explain the improved resistive switching characteristics under opposite polarity operation. The filament cone is thinner near the anode interface during the forming process; hence, the anode is altered by the application of a switching voltage with opposite polarity to the forming voltage polarity and the converted anode interface becomes the thicker part of the cone. The more uniform and stable switching behavior is attributed to control over the formation and rupture of the cone-shaped filaments at their thicker parts.

A low knee voltage and high breakdown voltage of 4H-SiC TSBS employing poly-Si/Ni Schottky scheme

NASA Astrophysics Data System (ADS)

Kim, Dong Young; Seok, Ogyun; Park, Himchan; Bahng, Wook; Kim, Hyoung Woo; Park, Ki Cheol

2018-02-01

We report a low knee voltage and high breakdown voltage 4H-SiC TSBS employing poly-Si/Ni dual Schottky contacts. A knee voltage was significantly improved from 0.75 to 0.48 V by utilizing an alternative low work-function material of poly-Si as an anode electrode. Also, reverse breakdown voltage was successfully improved from 901 to 1154 V due to a shrunk low-work-function Schottky region by a proposed self-align etching process between poly-Si and SiC. SiC TSBS with poly-Si/Ni dual Schottky scheme is a suitable structure for high-efficiency rectification and high-voltage blocking operation.

The effect of segmented anodes on the performance and plume of a Hall thruster

NASA Astrophysics Data System (ADS)

Kieckhafer, Alexander W.

Development of alternative propellants for Hall thruster operation is an active area of research. Xenon is the current propellant of choice for Hall thrusters, but can be costly in large thrusters and for extended test periods. Condensible propellants may offer an alternative to xenon, as they will not require costly active pumping to remove from a test facility, and may be less expensive to purchase. A method has been developed which uses segmented electrodes in the discharge channel of a Hall thruster to divert discharge current to and from the main anode and thus control the anode temperature. By placing a propellant reservoir in the anode, the evaporation rate, and hence, mass flow of propellant can be controlled. Segmented electrodes for thermal control of a Hall thruster represent a unique strategy of thruster design, and thus the performance of the thruster must be measured to determine the effect the electrodes have on the thruster. Furthermore, the source of any changes in thruster performance due to the adjustment of discharge current between the shims and the main anode must be characterized. A Hall thruster was designed and constructed with segmented electrodes. It was then tested at anode voltages between 300 and 400 V and mass flows between 4 and 6 mg/s, as well as 100%, 75%, 50%, 25%, and <5% of the discharge current on the shim electrodes. The level of current on the shims was adjusted by changing the shim voltage. At each operating point, the thruster performance, plume divergence, ion energy, and multiply charged ion fraction were measured. Thruster performance exhibited a small change with the level of discharge current on the shim electrodes. Thrust and specific impulse increased by as much as 6% and 7.7%, respectively, as discharge current was shifted from the main anode to the shims at constant anode voltage. Thruster efficiency did not change. Plume divergence was reduced by approximately 4 degrees of half-angle at high levels of current on the shims and at all combinations of mass flow and anode voltage. The fraction of singly charged xenon in the thruster plume varied between approximately 80% and 95% as the anode voltage and mass flow were changed, but did not show a significant change with shim current. Doubly and triply charged xenon made up the remainder of the ions detected. Ion energy exhibited a mixed behavior. The highest voltage present in the thruster largely dictated the most probable energy; either shim or anode voltage, depending on which was higher. The overall change in most probable ion energy was 20-30 eV, the majority of which took place while the shim voltage was higher than the anode voltage. The thrust, specific impulse, plume divergence, and ion energy all indicate that the thruster is capable of a higher performance output at high levels of discharge current on the shims. The lack of a change in efficiency and fraction of multiply charged ions indicate that the thruster can be operated at any level of current on the shims without detrimental effect, and thus a condensible propellant thruster can control the anode temperature without a decrease in efficiency or a change in the multiply charged ion fraction.

30 CFR 75.810 - High-voltage trailing cables; splices.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage trailing cables; splices. 75.810... § 75.810 High-voltage trailing cables; splices. [Statutory Provisions] In the case of high-voltage cables used as trailing cables, temporary splices shall not be used and all permanent splices shall be...

30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. [Statutory Provision] No electrical work shall be performed on low-, medium-, or high-voltage...

30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. [Statutory Provision] No electrical work shall be performed on low-, medium-, or high-voltage...

30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. [Statutory Provision] No electrical work shall be performed on low-, medium-, or high-voltage...

30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. [Statutory Provision] No electrical work shall be performed on low-, medium-, or high-voltage...

30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. [Statutory Provision] No electrical work shall be performed on low-, medium-, or high-voltage...

30 CFR 75.705-3 - Work on energized high-voltage surface lines; reporting.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Work on energized high-voltage surface lines... Work on energized high-voltage surface lines; reporting. Any operator designating and assigning qualified persons to perform repairs on energized high-voltage surface lines under the provisions of § 75...

30 CFR 77.704 - Work on high-voltage lines; deenergizing and grounding.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Work on high-voltage lines; deenergizing and... OF UNDERGROUND COAL MINES Grounding § 77.704 Work on high-voltage lines; deenergizing and grounding. High-voltage lines shall be deenergized and grounded before work is performed on them, except that...

76 FR 4575 - Safety Zone; Repair of High Voltage Transmission Lines to Logan International Airport, Saugus...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-01-26

...-AAOO Safety Zone; Repair of High Voltage Transmission Lines to Logan International Airport, Saugus... the Captain of the Port (COTP) Boston Zone to allow for repair of high voltage transmission lines to... the repair of high voltage transmission lines. Entering into, transiting through, mooring or anchoring...

30 CFR 75.704 - Grounding frames of stationary high-voltage equipment receiving power from ungrounded delta systems.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Grounding frames of stationary high-voltage...-UNDERGROUND COAL MINES Grounding § 75.704 Grounding frames of stationary high-voltage equipment receiving power from ungrounded delta systems. [Statutory Provisions] The frames of all stationary high-voltage...

21 CFR 892.1700 - Diagnostic x-ray high voltage generator.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Diagnostic x-ray high voltage generator. 892.1700... (CONTINUED) MEDICAL DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1700 Diagnostic x-ray high voltage generator. (a) Identification. A diagnostic x-ray high voltage generator is a device that is intended to...

21 CFR 892.1700 - Diagnostic x-ray high voltage generator.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Diagnostic x-ray high voltage generator. 892.1700... (CONTINUED) MEDICAL DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1700 Diagnostic x-ray high voltage generator. (a) Identification. A diagnostic x-ray high voltage generator is a device that is intended to...

21 CFR 892.1700 - Diagnostic x-ray high voltage generator.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Diagnostic x-ray high voltage generator. 892.1700... (CONTINUED) MEDICAL DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1700 Diagnostic x-ray high voltage generator. (a) Identification. A diagnostic x-ray high voltage generator is a device that is intended to...

21 CFR 892.1700 - Diagnostic x-ray high voltage generator.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Diagnostic x-ray high voltage generator. 892.1700... (CONTINUED) MEDICAL DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1700 Diagnostic x-ray high voltage generator. (a) Identification. A diagnostic x-ray high voltage generator is a device that is intended to...

21 CFR 892.1700 - Diagnostic x-ray high voltage generator.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Diagnostic x-ray high voltage generator. 892.1700... (CONTINUED) MEDICAL DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1700 Diagnostic x-ray high voltage generator. (a) Identification. A diagnostic x-ray high voltage generator is a device that is intended to...

Pulse switching for high energy lasers

NASA Technical Reports Server (NTRS)

Laudenslager, J. B.; Pacala, T. J. (Inventor)

1981-01-01

A saturable inductor switch for compressing the width and sharpening the rise time of high voltage pulses from a relatively slow rise time, high voltage generator to an electric discharge gas laser (EDGL) also provides a capability for efficient energy transfer from a high impedance primary source to an intermediate low impedance laser discharge network. The switch is positioned with respect to a capacitive storage device, such as a coaxial cable, so that when a charge build-up in the storage device reaches a predetermined level, saturation of the switch inductor releases or switches energy stored in the capactive storage device to the EDGL. Cascaded saturable inductor switches for providing output pulses having rise times of less than ten nanoseconds and a technique for magnetically biasing the saturable inductor switch are disclosed.

Study of a phase-to-ground fault on a 400 kV overhead transmission line

NASA Astrophysics Data System (ADS)

Iagăr, A.; Popa, G. N.; Diniş, C. M.

2018-01-01

Power utilities need to supply their consumers at high power quality level. Because the faults that occur on High-Voltage and Extra-High-Voltage transmission lines can cause serious damages in underlying transmission and distribution systems, it is important to examine each fault in detail. In this work we studied a phase-to-ground fault (on phase 1) of 400 kV overhead transmission line Mintia-Arad. Indactic® 650 fault analyzing system was used to record the history of the fault. Signals (analog and digital) recorded by Indactic® 650 were visualized and analyzed by Focus program. Summary of fault report allowed evaluation of behavior of control and protection equipment and determination of cause and location of the fault.

Newspapers and Adult Understanding of Public Affairs: Two Longitudinal Community Studies.

ERIC Educational Resources Information Center

Tichenor, P. J.; And Others

Two longitudinal field studies of the process of information dissemination through newspapers were conducted on two different public affairs topics (regional planning and routing of a high voltage power line) in four communities to examine the role of newspapers in increasing levels of conflict and in creating greater levels of awareness and…

Characterization of physical and biochemical changes in plasma treated spinach seed during germination

NASA Astrophysics Data System (ADS)

Hye Ji, Sang; Ki, Se Hoon; Kang, Min Ho; Choi, Jin Sung; Park, Yeunsoo; Oh, Jaesung; Kim, Seong Bong; Yoo, Suk Jae; Choi, Eun Ha; Park, Gyungsoon

2018-04-01

Despite the accumulating data on the effect of plasma on seed germination, mechanisms of plasma action need more extensive research. In a previous study, we observed that high voltage nanosecond pulsed plasma enhanced the germination of spinach seeds and subsequent seedling growth. As a follow-up study, we investigated the physico-chemical, biochemical, and molecular changes in seed after plasma treatment, focusing on the early germination stage, to elucidate mechanism(s) for the stimulating effects of plasma on seed germination. The primary radicle protruded from seeds exposed to high voltage nanosecond pulsed plasma (one shot) slightly faster than the control seeds. The hydrophilicity of the seed surface significantly increased after treatment with high voltage nanosecond pulsed plasma (one shot). However, a very subtle increase in water uptake by plasma treated seeds was observed. Raman and FTIR spectroscopy analyses on chloroform extract of seed coats demonstrated no significant chemical etching on the surface of plasma treated seeds. This may be related to no dramatic increase in water absorption by seeds. The level of GA hormone and starch hydrolysis inside the plasma treated seeds was significantly elevated within 24 h. Taken together, our results suggest that high voltage nanosecond pulsed plasma may not only enhance hydrophilicity of the seed surface but also stimulate biochemical and molecular processes inside seed, leading to enhanced embryonic development.

MIS capacitor studies on silicon carbide single crystals

NASA Technical Reports Server (NTRS)

Kopanski, J. J.

1990-01-01

Cubic SIC metal-insulator-semiconductor (MIS) capacitors with thermally grown or chemical-vapor-deposited (CVD) insulators were characterized by capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) measurements. The purpose of these measurements was to determine the four charge densities commonly present in an MIS capacitor (oxide fixed charge, N(f); interface trap level density, D(it); oxide trapped charge, N(ot); and mobile ionic charge, N(m)) and to determine the stability of the device properties with electric-field stress and temperature. The section headings in the report include the following: Capacitance-voltage and conductance-voltage measurements; Current-voltage measurements; Deep-level transient spectroscopy; and Conclusions (Electrical characteristics of SiC MIS capacitors).

The CARIBU EBIS control and synchronization system

NASA Astrophysics Data System (ADS)

Dickerson, Clayton; Peters, Christopher

2015-01-01

The Californium Rare Isotope Breeder Upgrade (CARIBU) Electron Beam Ion Source (EBIS) charge breeder has been built and tested. The bases of the CARIBU EBIS electrical system are four voltage platforms on which both DC and pulsed high voltage outputs are controlled. The high voltage output pulses are created with either a combination of a function generator and a high voltage amplifier, or two high voltage DC power supplies and a high voltage solid state switch. Proper synchronization of the pulsed voltages, fundamental to optimizing the charge breeding performance, is achieved with triggering from a digital delay pulse generator. The control system is based on National Instruments realtime controllers and LabVIEW software implementing Functional Global Variables (FGV) to store and access instrument parameters. Fiber optic converters enable network communication and triggering across the platforms.

30 CFR 75.811 - High-voltage underground equipment; grounding.

Code of Federal Regulations, 2010 CFR

2010-07-01

...-voltage equipment supplying power to such equipment receiving power from resistance grounded systems shall... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage underground equipment; grounding... COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage...

A Low-Voltage Chopper-Stabilized Amplifier for Fetal ECG Monitoring With a 1.41 Power Efficiency Factor.

PubMed

Song, Shuang; Rooijakkers, Michael; Harpe, Pieter; Rabotti, Chiara; Mischi, Massimo; van Roermund, Arthur H M; Cantatore, Eugenio

2015-04-01

This paper presents a low-voltage current-reuse chopper-stabilized frontend amplifier for fetal ECG monitoring. The proposed amplifier allows for individual tuning of the noise in each measurement channel, minimizing the total power consumption while satisfying all application requirements. The low-voltage current reuse topology exploits power optimization in both the current and the voltage domain, exploiting multiple supply voltages (0.3, 0.6 and 1.2 V). The power management circuitry providing the different supplies is optimized for high efficiency (peak charge-pump efficiency = 90%).The low-voltage amplifier together with its power management circuitry is implemented in a standard 0.18 μm CMOS process and characterized experimentally. The amplifier core achieves both good noise efficiency factor (NEF=1.74) and power efficiency factor (PEF=1.05). Experiments show that the amplifier core can provide a noise level of 0.34 μVrms in a 0.7 to 182 Hz band, consuming 1.17 μW power. The amplifier together with its power management circuitry consumes 1.56 μW, achieving a PEF of 1.41. The amplifier is also validated with adult ECG and pre-recorded fetal ECG measurements.

Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits

PubMed Central

Wang, Huiliang; Wei, Peng; Li, Yaoxuan; Han, Jeff; Lee, Hye Ryoung; Naab, Benjamin D.; Liu, Nan; Wang, Chenggong; Adijanto, Eric; Tee, Benjamin C.-K.; Morishita, Satoshi; Li, Qiaochu; Gao, Yongli; Cui, Yi; Bao, Zhenan

2014-01-01

Tuning the threshold voltage of a transistor is crucial for realizing robust digital circuits. For silicon transistors, the threshold voltage can be accurately controlled by doping. However, it remains challenging to tune the threshold voltage of single-wall nanotube (SWNT) thin-film transistors. Here, we report a facile method to controllably n-dope SWNTs using 1H-benzoimidazole derivatives processed via either solution coating or vacuum deposition. The threshold voltages of our polythiophene-sorted SWNT thin-film transistors can be tuned accurately and continuously over a wide range. Photoelectron spectroscopy measurements confirmed that the SWNT Fermi level shifted to the conduction band edge with increasing doping concentration. Using this doping approach, we proceeded to fabricate SWNT complementary inverters by inkjet printing of the dopants. We observed an unprecedented noise margin of 28 V at VDD = 80 V (70% of 1/2VDD) and a gain of 85. Additionally, robust SWNT complementary metal−oxide−semiconductor inverter (noise margin 72% of 1/2VDD) and logic gates with rail-to-rail output voltage swing and subnanowatt power consumption were fabricated onto a highly flexible substrate. PMID:24639537

An inductor-based converter with EMI reduction for low-voltage thermoelectric energy harvesting

NASA Astrophysics Data System (ADS)

Wang, Chuang; Zhao, Kai; Li, Zunchao

2017-07-01

This paper presents a self-powered inductor-based converter which harvests thermoelectric energy and boosts extremely low voltage to a typical voltage level for supplying body sensor nodes. Electromagnetic interference (EMI) of the converter is reduced by spreading spectrum of fundamental frequency and harmonics via pseudo-random modulation, which is obtained via combining the linear feedback shift register and digitally controlled oscillator. Besides, the methods, namely extracting energy near MPP and reducing the power dissipation, are employed to improve the power efficiency. The presented inductor-based converter is designed and verified in CSMC CMOS 0.18-µm 1P6M process. The results reveal that it achieves the high efficiency and EMI reduction at the same time.

System and method for charging electrochemical cells in series

DOEpatents

DeLuca, William H.; Hornstra, Jr, Fred; Gelb, George H.; Berman, Baruch; Moede, Larry W.

1980-01-01

A battery charging system capable of equalizing the charge of each individual cell at a selected full charge voltage includes means for regulating charger current to first increase current at a constant rate until a bulk charging level is achieved or until any cell reaches a safe reference voltage. A system controller then begins to decrease the charging rate as long as any cell exceeds the reference voltage until an equalization current level is reached. At this point, the system controller activates a plurality of shunt modules to permit shunting of current around any cell having a voltage exceeding the reference voltage. Leads extending between the battery of cells and shunt modules are time shared to permit alternate shunting of current and voltage monitoring without the voltage drop caused by the shunt current. After each cell has at one time exceeded the reference voltage, the charging current is terminated.

Microchip amplifier for in vitro, in vivo, and automated whole cell patch-clamp recording

PubMed Central

Kolb, Ilya; Kodandaramaiah, Suhasa B.; Chubykin, Alexander A.; Yang, Aimei; Bear, Mark F.; Boyden, Edward S.; Forest, Craig R.

2014-01-01

Patch clamping is a gold-standard electrophysiology technique that has the temporal resolution and signal-to-noise ratio capable of reporting single ion channel currents, as well as electrical activity of excitable single cells. Despite its usefulness and decades of development, the amplifiers required for patch clamping are expensive and bulky. This has limited the scalability and throughput of patch clamping for single-ion channel and single-cell analyses. In this work, we have developed a custom patch-clamp amplifier microchip that can be fabricated using standard commercial silicon processes capable of performing both voltage- and current-clamp measurements. A key innovation is the use of nonlinear feedback elements in the voltage-clamp amplifier circuit to convert measured currents into logarithmically encoded voltages, thereby eliminating the need for large high-valued resistors, a factor that has limited previous attempts at integration. Benchtop characterization of the chip shows low levels of current noise [1.1 pA root mean square (rms) over 5 kHz] during voltage-clamp measurements and low levels of voltage noise (8.2 μV rms over 10 kHz) during current-clamp measurements. We demonstrate the ability of the chip to perform both current- and voltage-clamp measurement in vitro in HEK293FT cells and cultured neurons. We also demonstrate its ability to perform in vivo recordings as part of a robotic patch-clamping system. The performance of the patch-clamp amplifier microchip compares favorably with much larger commercial instrumentation, enabling benchtop commoditization, miniaturization, and scalable patch-clamp instrumentation. PMID:25429119

High voltage DC power supply

DOEpatents

Droege, T.F.

1989-12-19

A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively. 7 figs.

High voltage DC power supply

DOEpatents

Droege, Thomas F.

1989-01-01

A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively.

30 CFR 75.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Fail safe ground check circuits on high-voltage... High-Voltage Distribution § 75.803 Fail safe ground check circuits on high-voltage resistance grounded... shall include a fail safe ground check circuit to monitor continuously the grounding circuit to assure...

30 CFR 75.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Fail safe ground check circuits on high-voltage... High-Voltage Distribution § 75.803 Fail safe ground check circuits on high-voltage resistance grounded... shall include a fail safe ground check circuit to monitor continuously the grounding circuit to assure...

30 CFR 75.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Fail safe ground check circuits on high-voltage... High-Voltage Distribution § 75.803 Fail safe ground check circuits on high-voltage resistance grounded... shall include a fail safe ground check circuit to monitor continuously the grounding circuit to assure...

30 CFR 75.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Fail safe ground check circuits on high-voltage... High-Voltage Distribution § 75.803 Fail safe ground check circuits on high-voltage resistance grounded... shall include a fail safe ground check circuit to monitor continuously the grounding circuit to assure...

30 CFR 77.807-3 - Movement of equipment; minimum distance from high-voltage lines.

Code of Federal Regulations, 2010 CFR

2010-07-01

... high-voltage lines. 77.807-3 Section 77.807-3 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-3 Movement of equipment; minimum distance from high-voltage lines. When any part of any equipment operated on the surface of any...

30 CFR 75.154 - Repair of energized surface high voltage lines; qualified person.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Repair of energized surface high voltage lines... Certified Persons § 75.154 Repair of energized surface high voltage lines; qualified person. An individual... high voltage lines only if he has had at least 2 years experience in electrical maintenance, and at...

30 CFR 77.104 - Repair of energized surface high-voltage lines; qualified person.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Repair of energized surface high-voltage lines... high-voltage lines; qualified person. An individual is a qualified person within the meaning of § 77.704 of this part for the purpose of repairing energized surface high-voltage lines only if he has had...

30 CFR 75.812-2 - High-voltage power centers and transformers; record of examination.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false High-voltage power centers and transformers; record of examination. 75.812-2 Section 75.812-2 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.812-2 High-voltage power centers and transformers; record of examination...

30 CFR 75.812-2 - High-voltage power centers and transformers; record of examination.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false High-voltage power centers and transformers; record of examination. 75.812-2 Section 75.812-2 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.812-2 High-voltage power centers and transformers; record of examination...

30 CFR 75.812-2 - High-voltage power centers and transformers; record of examination.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false High-voltage power centers and transformers; record of examination. 75.812-2 Section 75.812-2 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.812-2 High-voltage power centers and transformers; record of examination...

30 CFR 75.812-2 - High-voltage power centers and transformers; record of examination.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage power centers and transformers; record of examination. 75.812-2 Section 75.812-2 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.812-2 High-voltage power centers and transformers; record of examination...

30 CFR 75.812-2 - High-voltage power centers and transformers; record of examination.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false High-voltage power centers and transformers; record of examination. 75.812-2 Section 75.812-2 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.812-2 High-voltage power centers and transformers; record of examination...

The interaction of spacecraft high voltage power systems with the space plasma environment

NASA Technical Reports Server (NTRS)

Domitz, S.; Grier, N. T.

1974-01-01

The development of spacecraft with electrical loads that require high voltage power is discussed. The high voltage solar array has been considered for supplying d.c. power directly to high voltage loads such as ion thrusters and communication tubes without intermediate power processing. Space power stations for transferring solar power to earth are being studied in the 40 kilovolt, multikilowatt regime. Analytical and experimental studies have determined that with the advent of high voltage power, new problems will arise through the interaction of the high voltage surfaces with the charged particle environment of space. The interactive environment has been identified and duplicated to some extent in simulation facilities at NASA-Lewis Research Center and at several contractor locations.

Neutron and gamma irradiation effects on power semiconductor switches

NASA Technical Reports Server (NTRS)

Schwarze, G. E.; Frasca, A. J.

1990-01-01

The performance characteristics of high-power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Neutron and gamma irradiation effects on power semiconductor switches

NASA Technical Reports Server (NTRS)

Schwarze, G. E.; Frasca, A. J.

1990-01-01

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Two-dimensional modelling of internal arc effects in an enclosed MV cell provided with a protection porous filter

NASA Astrophysics Data System (ADS)

Rochette, D.; Clain, S.; André, P.; Bussière, W.; Gentils, F.

2007-05-01

Medium voltage (MV) cells have to respect standards (for example IEC ones (IEC TC 17C 2003 IEC 62271-200 High Voltage Switchgear and Controlgear—Part 200 1st edn)) that define security levels against internal arc faults such as an accidental electrical arc occurring in the apparatus. New protection filters based on porous materials are developed to provide better energy absorption properties and a higher protection level for people. To study the filter behaviour during a major electrical accident, a two-dimensional model is proposed. The main point is the use of a dedicated numerical scheme for a non-conservative hyperbolic problem. We present a numerical simulation of the process during the first 0.2 s when the safety valve bursts and we compare the numerical results with tests carried out in a high power test laboratory on real electrical apparatus.

Nonlinear conductivity in silicon nitride

NASA Astrophysics Data System (ADS)

Tuncer, Enis

2017-08-01

To better comprehend electrical silicon-package interaction in high voltage applications requires full characterization of the electrical properties of dielectric materials employed in wafer and package level design. Not only the packaging but wafer level dielectrics, i.e. passivation layers, would experience high electric fields generated by the voltage applied pads. In addition the interface between the passivation layer and a mold compound might develop space charge because of the mismatch in electrical properties of the materials. In this contribution electrical properties of a thin silicon nitride (Si3N4) dielectric is reported as a function of temperature and electric field. The measured values later analyzed using different temperature dependent exponential expressions and found that the Mott variable range hopping conduction model was successful to express the data. A full temperature/electric field dependency of conductivity is generated. It was found that the conduction in Si3N4 could be expressed like a field ionization or Fowler-Nordheim mechanism.

Electrochemically controlled charging circuit for storage batteries

DOEpatents

Onstott, E.I.

1980-06-24

An electrochemically controlled charging circuit for charging storage batteries is disclosed. The embodiments disclosed utilize dc amplification of battery control current to minimize total energy expended for charging storage batteries to a preset voltage level. The circuits allow for selection of Zener diodes having a wide range of reference voltage levels. Also, the preset voltage level to which the storage batteries are charged can be varied over a wide range.

Low power arcjet performance

NASA Technical Reports Server (NTRS)

Curran, Francis M.; Sarmiento, Charles J.

1990-01-01

An experimental investigation was performed to evaluate arc jet operation at low power. A standard, 1 kW, constricted arc jet was run using nozzles with three different constrictor diameters. Each nozzle was run over a range of current and mass flow rates to explore stability and performance in the low power engine. A standard pulse-width modulated power processor was modified to accommodate the high operating voltages required under certain conditions. Stable, reliable operation at power levels below 0.5 kW was obtained at efficiencies between 30 and 40 percent. The operating range was found to be somewhat dependent on constrictor geometry at low mass flow rates. Quasi-periodic voltage fluctuations were observed at the low power end of the operating envelope, The nozzle insert geometry was found to have little effect on the performance of the device. The observed performance levels show that specific impulse levels above 350 seconds can be obtained at the 0.5 kW power level.

Low power arcjet performance

NASA Technical Reports Server (NTRS)

Curran, Francis M.; Sarmiento, Charles J.

1990-01-01

An experimental investigation was performed to evaluate arcjet operation at low power. A standard, 1 kW, constricted arcjet was run using nozzles with three different constrictor diameters. Each nozzle was run over a range of current and mass flow rates to explore stability and performance in the low power regime. A standard pulse-width modulated power processor was modified to accommodate the high operating voltages required under certain conditions. Stable, reliable operation at power levels below 0.5 kW was obtained at efficiencies between 30 and 40 percent. The operating range was found to be somewhat dependent on constrictor geometry at low mass flow rates. Quasi-periodic voltage fluctuations were observed at the low power end of the operating envelope. The nozzle insert geometry was found to have little effect on the performance of the device. The observed performance levels show that specific impulse levels above 350 seconds can be obtained at the 0.5 kW power level.

Cyanopyridine Based Bipolar Host Materials for Green Electrophosphorescence with Extremely Low Turn-On Voltages and High Power Efficiencies.

PubMed

Li, Wei; Li, Jiuyan; Liu, Di; Li, Deli; Wang, Fang

2016-08-24

Low driving voltage and high power efficiency are basic requirements when practical applications of organic light emitting diodes (OLEDs) in displays and lighting are considered. Two novel host materials m-PyCNmCP and 3-PyCNmCP incorporating cyanopyridine moiety as electron-transporting unit are developed for use in fac-tris(2-phenylpyridine)iridium(III) (Ir(ppy)3) based green phosphorescent OLEDs (PhOLEDs). Extremely low turn-on voltages of 2.01 and 2.27 V are realized, which are even lower than the theoretical limit of the emitted photon energy (hv)/electron charge (e) (2.37 V) of Ir(ppy)3. High power efficiency of 101.4 lm/W (corresponding to a maximum external quantum efficiency of 18.4%) and 119.3 lm/W (24.7%) are achieved for m-PyCNmCP and 3-PyCNmCP based green PhOLEDs. The excellent EL performance benefits from the ideal parameters of host materials by combining cyano and pyridine to enhance the n-type feature. The energetic favorable alignment of HOMO/LUMO levels of hosts with adjacent layers and the dopant for easy charge injections and direct charge trapping by dopant, their bipolar feature to balance charge transportations, sufficiently high triplet energy and small singlet/triplet energy difference (0.38 and 0.43 eV) combine to be responsible for the extremely low driving voltages and high power efficiencies of the green PhOLEDs.

The CARIBU EBIS control and synchronization system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dickerson, Clayton, E-mail: cdickerson@anl.gov; Peters, Christopher, E-mail: cdickerson@anl.gov

2015-01-09

The Californium Rare Isotope Breeder Upgrade (CARIBU) Electron Beam Ion Source (EBIS) charge breeder has been built and tested. The bases of the CARIBU EBIS electrical system are four voltage platforms on which both DC and pulsed high voltage outputs are controlled. The high voltage output pulses are created with either a combination of a function generator and a high voltage amplifier, or two high voltage DC power supplies and a high voltage solid state switch. Proper synchronization of the pulsed voltages, fundamental to optimizing the charge breeding performance, is achieved with triggering from a digital delay pulse generator. Themore » control system is based on National Instruments realtime controllers and LabVIEW software implementing Functional Global Variables (FGV) to store and access instrument parameters. Fiber optic converters enable network communication and triggering across the platforms.« less

Anode reactive bleed and injector shift control strategy

DOEpatents

Cai, Jun [Rochester, NY; Chowdhury, Akbar [Pittsford, NY; Lerner, Seth E [Honeoye Falls, NY; Marley, William S [Rush, NY; Savage, David R [Rochester, NY; Leary, James K [Rochester, NY

2012-01-03

A system and method for correcting a large fuel cell voltage spread for a split sub-stack fuel cell system. The system includes a hydrogen source that provides hydrogen to each split sub-stack and bleed valves for bleeding the anode side of the sub-stacks. The system also includes a voltage measuring device for measuring the voltage of each cell in the split sub-stacks. The system provides two levels for correcting a large stack voltage spread problem. The first level includes sending fresh hydrogen to the weak sub-stack well before a normal reactive bleed would occur, and the second level includes sending fresh hydrogen to the weak sub-stack and opening the bleed valve of the other sub-stack when the cell voltage spread is close to stack failure.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Korolev, Yu. D.; Landl, N. V., E-mail: landl@lnp.hcei.tsc.ru; Geyman, V. G.

Results from studies of a low-current glow discharge with a hollow cathode are presented. A specific feature of the discharge conditions was that a highly emissive tablet containing cesium carbonate was placed in the cathode cavity. In the absence of a tablet, the discharge ignition voltage was typically ≥3.5 kV, while the burning voltage was in the range of 500–600 V. The use of the tablet made it possible to decrease the ignition voltage to 280 V and maintain the discharge burning voltage at a level of about 130 V. A model of the current sustainment in a hollow-cathode dischargemore » is proposed. Instead of the conventional secondary emission yield, the model uses a generalized emission yield that takes into account not only ion bombardment of the cathode, but also the emission current from an external source. The model is used to interpret the observed current−voltage characteristics. The results of calculations agree well with the experimental data. It is shown that, in some discharge modes, the external emission current from the cathode can reach 25% of the total discharge current.« less

Ionic Liquid Gating Control of RKKY Interaction in FeCoB/Ru/FeCoB and (Pt/Co) 2/Ru/(Co/Pt) 2 Multilayers.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Qu; Wang, Lei; Zhou, Ziyao

To overcome the fundamental challenge of the weak natural response of antiferromagnetic materials under a magnetic field, voltage manipulation of antiferromagnetic interaction is developed to realize ultrafast, high-density, and power efficient antiferromagnetic spintronics. Here, we report a low voltage modulation of Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction via ionic liquid gating in synthetic antiferromagnetic multilayers of FeCoB/Ru/FeCoB and (Pt/Co) 2/Ru/(Co/Pt) 2. At room temperature, the distinct voltage control of transition between antiferromagnetic and ferromagnetic ordering is realized and up to 80% of perpendicular magnetic moments manage to switch with a small-applied voltage bias of 2.5 V. We related this ionic liquid gating-induced RKKYmore » interaction modification to the disturbance of itinerant electrons inside synthetic antiferromagnetic heterostructure and the corresponding change of its Fermi level. Voltage tuning of RKKY interaction may enable the next generation of switchable spintronics between antiferromagnetic and ferromagnetic modes with both fundamental and practical perspectives.« less

High-voltage nano-oxidation in deionized water and atmospheric environments by atomic force microscopy.

PubMed

Huang, Jen-Ching; Chen, Chung-Ming

2012-01-01

This study used atomic force microscopy (AFM), metallic probes with a nanoscale tip, and high-voltage generators to investigate the feasibility of high-voltage nano-oxidation processing in deionized water (DI water) and atmospheric environments. Researchers used a combination of wire-cutting and electrochemical etching to transform a 20-μm-thick stainless steel sheet into a conductive metallic AFM probe with a tip radius of 60 nm, capable of withstanding high voltages. The combination of AFM, high-voltage generators, and nanoscale metallic probes enabled nano-oxidation processing at 200 V in DI water environments, producing oxides up to 66.6 nm in height and 467.03 nm in width. Oxides produced through high-voltage nano-oxidation in atmospheric environments were 117.29 nm in height and 551.28 nm in width, considerably exceeding the dimensions of those produced in DI water. An increase in the applied bias voltage led to an apparent logarithmic increase in the height of the oxide dots in the range of 200-400 V. The performance of the proposed high-voltage nano-oxidation technique was relatively high with seamless integration between the AFM machine and the metallic probe fabricated in this study. © Wiley Periodicals, Inc.

Study of SF6 gas decomposition products based on spectroscopy technology

NASA Astrophysics Data System (ADS)

Cai, Ji-xing; Na, Yan-xiang; Ni, Wei-yuan; Li, Guo-wei; Feng, Ke-cheng; Song, Gui-cai

2011-08-01

With the rapid development of power industry, the number of SF6 electrical equipment are increasing, it has gradually replaced the traditional insulating oil material as insulation and arc media in the high-voltage electrical equipment. Pure SF6 gas has excellent insulating properties and arc characteristics; however, under the effect of the strong arc, SF6 gas will decompose and generate toxic substances, then corroding electrical equipment, thereby affecting the insulation and arc ability of electrical equipment. If excessive levels of impurities in the gas that will seriously affect the mechanical properties, breaking performance and electrical performance of electrical equipment, it will cause many serious consequences, even threaten the safe operation of the grid. This paper main analyzes the basic properties of SF6 gas and the basic situation of decomposition in the discharge conditions, in order to simulate the actual high-voltage electrical equipment, designed and produced a simulation device that can simulate the decomposition of SF6 gas under a high voltage discharge, and using fourier transform infrared spectroscopy to analyze the sample that produced by the simulation device. The result show that the main discharge decomposition product is SO2F2 (sulfuryl fluoride), the substance can react with water and generate corrosive H2SO4(sulfuric acid) and HF (hydrogen fluoride), also found that the increase in the number with the discharge, SO2F2concentration levels are on the rise. Therefore, the material can be used as one of the main characteristic gases to determine the SF6 electrical equipment failure, and to monitor their concentration levels.

Review of adult electrical burn injury outcomes worldwide: An analysis of low- voltage versus high-voltage electrical injury

PubMed Central

Shih, Jessica G; Shahrokhi, Shahriar; Jeschke, Marc G

2016-01-01

Objective To review low-voltage versus high-voltage electrical burn complications in adults, and to identify novel areas that are not recognized to improve outcomes. Methods An extensive literature search on electrical burn injuries was performed using OVID Medline, PubMed and EMBASE databases from 1946–2015. Studies relating to outcomes of electrical injury in the adult population (≥18 years of age) were included in the study. Results Forty-one single-institution publications with a total of 5485 electrical injury patients were identified and included in the present study. 18.0% of these patients were low-voltage injuries (LVI), 38.3% high-voltage injuries (HVI) and 43.7% with voltage not otherwise specified (NOS). Forty-four percent of studies did not characterize outcomes according to low versus high-voltage injuries. Reported outcomes include surgical, medical, post-traumatic, and other (long-term/psychological/rehabilitative), all of which report greater incidence rates in HVI compared to LVI. Only two studies report on psychological outcomes such as post-traumatic stress disorder. Mortality from electrical injuries are 2.6% in LVI, 5.2% in HVI and 3.7% in NOS. Coroner’s reports reveal a ratio of 2.4:1 for deaths caused by low-voltage injury compared to high voltage-injury. Conclusions High-voltage injuries lead to greater morbidity and mortality than low-voltage injuries. However, the results of the coroner’s reports suggest that immediate mortality from low-voltage injury may be underestimated. Furthermore, based on the data of this analysis we conclude that the majority of studies report electrical injury outcomes, however, the majority of them do not analyze complications by low versus high voltage and often lack long-term psychological and rehabilitation outcomes post-electrical injury indicating that a variety of central aspects are not being evaluated or assessed. PMID:27359191

Central action of dendrotoxin: selective reduction of a transient K conductance in hippocampus and binding to localized acceptors.

PubMed

Halliwell, J V; Othman, I B; Pelchen-Matthews, A; Dolly, J O

1986-01-01

Dendrotoxin, a small single-chain protein from the venom of Dendroaspis angusticeps, is highly toxic following intracerebroventricular injection into rats. Voltage-clamp analysis of CA1 neurons in hippocampal slices, treated with tetrodotoxin, revealed that nanomolar concentrations of dendrotoxin reduce selectively a transient, voltage-dependent K conductance. Epileptiform activity known to be induced by dendrotoxin can be attributed to such an action. Membrane currents not affected directly by the toxin include (i) Ca-activated K conductance; (ii) noninactivating voltage-dependent K conductance; (iii) inactivating and noninactivating Ca conductances; (iv) persistent inward (anomalous) rectifier current. Persistence of the effects of the toxin when Cd was included to suppress spontaneous transmitter release indicates a direct action on the neuronal membrane. Using biologically active, 125I-labeled dendrotoxin, protein acceptor sites of high affinity were detected on cerebrocortical synaptosomal membranes and sections of rat brain. In hippocampus, toxin binding was shown autoradiographically to reside in synapse-rich and white matter regions, with lower levels in cell body layers. This acceptor is implicated in the action of toxin because its affinities for dendrotoxin congeners are proportional to their central neurotoxicities and potencies in reducing the transient, voltage-dependent K conductance.

Performance analysis of resistive switching devices based on BaTiO3 thin films

NASA Astrophysics Data System (ADS)

Samardzic, Natasa; Kojic, Tijana; Vukmirovic, Jelena; Tripkovic, Djordjije; Bajac, Branimir; Srdic, Vladimir; Stojanovic, Goran

2016-03-01

Resitive switching devices, memristors, have recenty attracted much attention due to promising performances and potential applications in the field of logic and memory devices. Here, we present thin film BaTiO3 based memristor fabricated using ink-jet printing technique. Active material is a single layer barium titanate film with thickness of ̴100 nm, sandwitched between metal electodes. Printing parameters were optimized aiming to achieve stable drop flow and uniform printed layer. Current-voltage characteristics show typical memristive behavior with pinched hysteresis loop crossed at the origin, with marked differences between High Resistive State (HRS) and Low Resistive State (LRS). Obtained resistive states are stable during numerous switching processes. The device also shows unipolar switching effect for negative voltage impulses. Variable voltage impulse amplitudes leads to the shifting of the energy levels of electode contacts resulting in changing of the overall current through the device. Structural charcterization have been performed using XRD analysis and SEM micrography. High-temperature current-voltage measurements combined with transport parameter analysis using Hall efect measurement system (HMS 3000) and Impedance Analyzer AC measurements allows deeper insigth into conduction mechanism of ferroelectric memristors.

Micropower RF transponder with superregenerative receiver and RF receiver with sampling mixer

DOEpatents

McEwan, Thomas E.

1997-01-01

A micropower RF transdponder employs a novel adaptation of the superregenerative receiver wherein the quench oscillator is external to the regenerative transistor. The quench oscillator applies an exponentially decaying waveform rather than the usual sinewave to achieve high sensitivity at microampere current levels. Further improvements include circuit simplifications for antenna coupling, extraction of the detected signal, and a low-voltage bias configuration that allows operation with less than a 1-volt rail voltage. The inventive transponder is expected to operate as long as the battery shelf life.

Testing and failure analysis to improve screening techniques for hermetically sealed metallized film capacitors for low energy applications

NASA Technical Reports Server (NTRS)

1982-01-01

Effective screening techniques are evaluated for detecting insulation resistance degradation and failure in hermetically sealed metallized film capacitors used in applications where low capacitor voltage and energy levels are common to the circuitry. A special test and monitoring system capable of rapidly scanning all test capacitors and recording faults and/or failures is examined. Tests include temperature cycling and storage as well as low, medium, and high voltage life tests. Polysulfone film capacitors are more heat stable and reliable than polycarbonate film units.

Applying PWM to control overcurrents at unbalanced faults of force-commutated VSCs used as static var compensators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Y.; Ekstroem, A.

1997-01-01

This study is devoted to investigating the possibility of controlling the overcurrent of a forced-commutated voltage source converter (VSC) by PWM when the ac system is undergoing large unbalanced disturbance. The converter is supposed to be used as a static var compensator at a high power level. A novel control strategy is proposed for controlling the reactive current and the dc side voltage independently. Digital simulation results are presented and compared with the results by using just the reactive current control with fundamental switching frequency.

Micropower RF transponder with superregenerative receiver and RF receiver with sampling mixer

DOEpatents

McEwan, T.E.

1997-05-13

A micropower RF transponder employs a novel adaptation of the superregenerative receiver wherein the quench oscillator is external to the regenerative transistor. The quench oscillator applies an exponentially decaying waveform rather than the usual sinewave to achieve high sensitivity at microampere current levels. Further improvements include circuit simplifications for antenna coupling, extraction of the detected signal, and a low-voltage bias configuration that allows operation with less than a 1-volt rail voltage. The inventive transponder is expected to operate as long as the battery shelf life. 13 figs.

HIGH VOLTAGE GENERATOR

DOEpatents

Zito, G.V.

1959-04-21

This patent relates to high voltage supply circuits adapted for providing operating voltages for GeigerMueller counter tubes, and is especially directed to an arrangement for maintaining uniform voltage under changing conditions of operation. In the usual power supply arrangement for counter tubes the counter voltage is taken from across the power supply output capacitor. If the count rate exceeds the current delivering capaciiy of the capacitor, the capacitor voltage will drop, decreasing the counter voltage. The present invention provides a multivibrator which has its output voltage controlled by a signal proportional to the counting rate. As the counting rate increases beyond the current delivering capacity of the capacitor, the rectified voltage output from the multivibrator is increased to maintain uniform counter voltage.

Characterization system for research on energy storage capacitors.

PubMed

Noriega, J R; Iyore, O D; Budime, C; Gnade, B; Vasselli, J

2013-05-01

In this work a characterization system for high energy-density capacitors is described and demonstrated. Capacitors are being designed using thin-film technology in an attempt to achieve higher energy-density levels by operating the devices at a high voltage. These devices are fabricated from layers of 100 nm aluminum and a layer of polyvinylidene fluoride-hexafluoropropylene on a polyethylene naphthalate plastic substrate. The devices have been designed to store electrical charge at up to 200 V. Characterizations of these devices focus on the measurement of capacitance vs bias voltage and temperature, equivalent series resistance, and charge/discharge cycles. For the purpose of the characterization of these capacitors, an electronic charge/discharge interface was designed and tested.

High-resolution emission spectra of pulsed terahertz quantum-cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ikonnikov, A. V., E-mail: antikon@ipm.sci-nnov.ru; Antonov, A. V.; Lastovkin, A. A.

The spectra of pulsed terahertz quantum-cascade lasers were measured with high spectral resolution. The characteristic line width at half maximum was 0.01 cm{sup -1}; it is controlled by laser temperature variations during the supply voltage pulse. It was shown that an increase in the laser temperature leads to a decrease in the emission frequency, which is caused by an increase in the effective refractive index of the active region. It was also found that a decrease in the supply voltage results in a decrease in the emission frequency, which is caused by a change in the energy of diagonal transitionsmore » between lasing levels.« less

Spectral features and voltage effects in high-field electroluminescence of AlN filamentary nanocrystals

NASA Astrophysics Data System (ADS)

Weinstein, I. A.; Vokhmintsev, A. S.; Chaikin, D. V.; Afonin, Yu. D.

2016-11-01

The high-field electroluminescence (EL) spectra for Al-rich AlN nanowhiskers varying applied voltage were studied. The observed 2.70 eV emission, which can be considered as superposition of two Gaussian bands in 2.75 and 2.53 eV, was analyzed. It was shown that Fowler-Nordheim effect took place in EL mechanism with participation of capturing levels of ON- and VN-centers when AlN nanowhiskers were exposed to an external field of 2.5 ÷ 10 V/μm. Obtained results and made conclusions are in a good agreement with independent electron field emission measurements for different one-dimensional AlN nanostructures.

Switch contact device for interrupting high current, high voltage, AC and DC circuits

DOEpatents

Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

2005-01-04

A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

33 CFR 165.T01-0992 - Safety Zone; repair of high voltage transmission lines to Logan International Airport; Saugus...

Code of Federal Regulations, 2011 CFR

2011-07-01

... voltage transmission lines to Logan International Airport; Saugus River, Saugus, MA. 165.T01-0992 Section... high voltage transmission lines to Logan International Airport; Saugus River, Saugus, MA. (a) General... high voltage transmission lines to Logan International Airport; Saugus River, Saugus, MA. (i) All...

30 CFR 56.12071 - Movement or operation of equipment near high-voltage power lines.

Code of Federal Regulations, 2010 CFR

2010-07-01

...-voltage power lines. 56.12071 Section 56.12071 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... NONMETAL MINES Electricity § 56.12071 Movement or operation of equipment near high-voltage power lines. When equipment must be moved or operated near energized high-voltage powerlines (other than trolley...

76 FR 19698 - Safety Zone; Repair of High Voltage Transmission Lines to Logan International Airport, Saugus...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-04-08

...-AA00 Safety Zone; Repair of High Voltage Transmission Lines to Logan International Airport, Saugus... (COTP) Boston Zone to allow for repair of high voltage transmission lines to Logan Airport. This safety... voltage transmission lines. Entering into, transiting through, mooring or anchoring within this zone is...

30 CFR 57.12071 - Movement or operation of equipment near high-voltage powerlines.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Movement or operation of equipment near high-voltage powerlines. 57.12071 Section 57.12071 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION...-voltage powerlines. When equipment must be moved or operated near energized high-voltage powerlines (other...

New Modulation Method and Control Strategies for Power Electronics Inverters

NASA Astrophysics Data System (ADS)

Aleenejad, Mohsen

The DC to AC power Converters (so-called Inverters) are widely used in industrial applications. The MLIs are becoming increasingly popular in industrial apparatus aimed at medium to high power conversion applications. In comparison to the conventional inverters, they feature superior characteristics such as lower total harmonic distortion (THD), higher efficiency, and lower switching voltage stress. Nevertheless, the superior characteristics come at the price of a more complex topology with an increased number of power electronic switches. The increased number of power electronics switches results in more complicated control strategies for the inverter. Moreover, as the number of power electronic switches increases, the chances of fault occurrence of the switches increases, and thus the inverter's reliability decreases. Due to the extreme monetary ramifications of the interruption of operation in commercial and industrial applications, high reliability for power inverters utilized in these sectors is critical. As a result, developing simple control strategies for normal and fault-tolerant operation of MLIs has always been an interesting topic for researchers in related areas. The purpose of this dissertation is to develop new control and fault-tolerant strategies for the multilevel power inverter. For the normal operation of the inverter, a new high switching frequency technique is developed. The proposed method extends the utilization of the dc link voltage while minimizing the dv/dt of the switches. In the event of a fault, the line voltages of the faulty inverters are unbalanced and cannot be applied to the 3-phase loads. For the faulty condition of the inverter, three novel fault-tolerant techniques are developed. The proposed fault-tolerant strategies generate balanced line voltages without bypassing any healthy and operative inverter element, makes better use of the inverter capacity and generates higher output voltage. These strategies exploit the advantages of the Selective Harmonic Elimination (SHE) and Space Vector Modulation (SVM) methods in conjunction with a slightly modified Fundamental Phase Shift Compensation (FPSC) technique to generate balanced voltages and manipulate voltage harmonics at the same time. The proposed strategies are applicable to several classes of MLIs with three or more voltage levels.

High-frequency high-voltage high-power DC-to-DC converters

NASA Technical Reports Server (NTRS)

Wilson, T. G.; Owen, H. A.; Wilson, P. M.

1982-01-01

A simple analysis of the current and voltage waveshapes associated with the power transistor and the power diode in an example current-or-voltage step-up (buck-boost) converter is presented. The purpose of the analysis is to provide an overview of the problems and design trade-offs which must be addressed as high-power high-voltage converters are operated at switching frequencies in the range of 100 kHz and beyond. Although the analysis focuses on the current-or-voltage step-up converter as the vehicle for discussion, the basic principles presented are applicable to other converter topologies as well.

High-frequency high-voltage high-power DC-to-DC converters

NASA Astrophysics Data System (ADS)

Wilson, T. G.; Owen, H. A.; Wilson, P. M.

1982-09-01

A simple analysis of the current and voltage waveshapes associated with the power transistor and the power diode in an example current-or-voltage step-up (buck-boost) converter is presented. The purpose of the analysis is to provide an overview of the problems and design trade-offs which must be addressed as high-power high-voltage converters are operated at switching frequencies in the range of 100 kHz and beyond. Although the analysis focuses on the current-or-voltage step-up converter as the vehicle for discussion, the basic principles presented are applicable to other converter topologies as well.

High-efficient and brightness white organic light-emitting diodes operated at low bias voltage

NASA Astrophysics Data System (ADS)

Zhang, Lei; Yu, Junsheng; Yuan, Kai; Jian, Yadong

2010-10-01

White organic light-emitting diodes (OLEDs) used for display application and lighting need to possess high efficiency, high brightness, and low driving voltage. In this work, white OLEDs consisted of ambipolar 9,10-bis 2-naphthyl anthracene (ADN) as a host of blue light-emitting layer (EML) doped with tetrabutyleperlene (TBPe) and a thin codoped layer consisted of N, N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB) as a host of yellow light-emitting layer doped with 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB) were investigated. With appropriate tuning in the film thickness, position, and dopant concentration of the co-doped layer, a white OLED with a luminance yield of 10.02 cd/A with the CIE coordinates of (0.29, 0.33) has been achieved at a bias voltage of 9 V and a luminance level of over 10,000 cd/m2. By introducing the PIN structure with both HIL and bis(10- hydroxybenzo-quinolinato)-beryllium (BeBq2) ETL, the power efficiency of white OLED was improved.

30 CFR 75.816 - Guarding of cables.

Code of Federal Regulations, 2010 CFR

2010-07-01

... MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution High-Voltage Longwalls § 75.816 Guarding of cables. (a) High-voltage cables must be guarded at the following locations...

Electrical Characterization Laboratory | Energy Systems Integration

Science.gov Websites

the ability of electrical equipment to withstand high-voltage surges and high-current faults. A capability. High-Voltage Characterization The high-voltage characterization hub offers a Class 1, Div 2 lab

Low-jitter high-power thyristor array pulse driver and generator

DOEpatents

Hanks, Roy L.

2002-01-01

A method and apparatus for generating low-jitter, high-voltage and high-current pulses for driving low impedance loads such as detonator fuses uses a MOSFET driver which, when triggered, discharges a high-voltage pre-charged capacitor into the primary of a toroidal current-multiplying transformer with multiple isolated secondary windings. The secondary outputs are suitable for driving an array of thyristors that discharge a precharged high-voltage capacitor and thus generating the required high-voltage and high-current pulse.

Radio-frequency powered glow discharge device and method with high voltage interface

DOEpatents

Duckworth, D.C.; Marcus, R.K.; Donohue, D.L.; Lewis, T.A.

1994-06-28

A high voltage accelerating potential, which is supplied by a high voltage direct current power supply, is applied to the electrically conducting interior wall of an RF powered glow discharge cell. The RF power supply desirably is electrically grounded, and the conductor carrying the RF power to the sample held by the probe is desirably shielded completely excepting only the conductor's terminal point of contact with the sample. The high voltage DC accelerating potential is not supplied to the sample. A high voltage capacitance is electrically connected in series between the sample on the one hand and the RF power supply and an impedance matching network on the other hand. The high voltage capacitance isolates the high DC voltage from the RF electronics, while the RF potential is passed across the high voltage capacitance to the plasma. An inductor protects at least the RF power supply, and desirably the impedance matching network as well, from a short that might occur across the high voltage capacitance. The discharge cell and the probe which holds the sample are configured and disposed to prevent the probe's components, which are maintained at ground potential, from bridging between the relatively low vacuum region in communication with the glow discharge maintained within the cell on the one hand, and the relatively high vacuum region surrounding the probe and cell on the other hand. The probe and cell also are configured and disposed to prevent the probe's components from electrically shorting the cell's components. 11 figures.

Radio-frequency powered glow discharge device and method with high voltage interface

DOEpatents

Duckworth, Douglas C.; Marcus, R. Kenneth; Donohue, David L.; Lewis, Trousdale A.

1994-01-01

A high voltage accelerating potential, which is supplied by a high voltage direct current power supply, is applied to the electrically conducting interior wall of an RF powered glow discharge cell. The RF power supply desirably is electrically grounded, and the conductor carrying the RF power to the sample held by the probe is desirably shielded completely excepting only the conductor's terminal point of contact with the sample. The high voltage DC accelerating potential is not supplied to the sample. A high voltage capacitance is electrically connected in series between the sample on the one hand and the RF power supply and an impedance matching network on the other hand. The high voltage capacitance isolates the high DC voltage from the RF electronics, while the RF potential is passed across the high voltage capacitance to the plasma. An inductor protects at least the RF power supply, and desirably the impedance matching network as well, from a short that might occur across the high voltage capacitance. The discharge cell and the probe which holds the sample are configured and disposed to prevent the probe's components, which are maintained at ground potential, from bridging between the relatively low vacuum region in communication with the glow discharge maintained within the cell on the one hand, and the relatively high vacuum region surrounding the probe and cell on the other hand. The probe and cell also are configured and disposed to prevent the probe's components from electrically shorting the cell's components.

Electronics drivers for high voltage dielectric electro active polymer (DEAP) applications

NASA Astrophysics Data System (ADS)

Zhang, Zhe; Andersen, Michael A. E.

2015-04-01

Dielectric electro active polymer (DEAP) can be used in actuation, sensing and energy harvesting applications, but driving the DEAP based actuators and generators has three main challenges from a power electronics standpoint, i.e. high voltage (around 2.5 kV), nonlinearity, and capacitive behavior. In this paper, electronics divers for heating valves, loud speakers, incremental motors, and energy harvesting are reviewed, studied and developed in accordance with their corresponding specifications. Due to the simplicity and low power capacity (below 10W), the reversible Fly-back converters with both magnetic and piezoelectric transformers are employed for the heating valve and incremental motor application, where only ON/OFF regulation is adopted for energy saving; as for DEAP based energy harvesting, the noisolated Buck/Boost converter is used, due to the system high power capacity (above 100W), but the voltage balancing across the series-connected high voltage IGBTs is a critical issue and accordingly a novel gate driver circuitry is proposed and equipped; due to the requirements of the audio products, such as low distortion and noise, the multi-level Buck converter based Class-D amplifier, because of its high control linearity, is implemented for the loud speaker applications. A synthesis among those converter topologies and control techniques is given; therefore, for those DEAP based applications, their diversity and similarity of electronics drivers, as well as the key technologies employed are analyzed. Therefore a whole picture of how to choose the proper topologies can be revealed. Finally, the design guidelines in order to achieve high efficiency and reliability are discussed.

Thin wire pointing method

NASA Technical Reports Server (NTRS)

Green, G.; Mattauch, R. J. (Inventor)

1983-01-01

A method is described for forming sharp tips on thin wires, in particular phosphor bronze wires of diameters such as one-thousandth inch used to contact micron size Schottky barrier diodes, which enables close control of tip shape and which avoids the use of highly toxic solutions. The method includes dipping an end of a phosphor bronze wire into a dilute solution of sulfamic acid and applying a current through the wire to electrochemically etch it. The humidity in the room is controlled to a level of less than 50%, and the voltage applied between the wire and another electrode in the solutions is a half wave rectified voltage. The current through the wire is monitored, and the process is stopped when the current falls to a predetermined low level.

Thin grain oriented electrical steel for PWM voltages fed magnetic cores

NASA Astrophysics Data System (ADS)

Belgrand, Thierry; Lemaître, Régis; Benabou, Abdelkader; Blaszkowski, Jonathan; Wang, Chaoyong

2018-04-01

This paper reports on performances of high permeability grain oriented electrical steel when used in association with power electronic switching devices. Loss measurement results obtained from the Epstein test, using sinusoidal or various PWM voltages in medium frequency range, show that for both studied thicknesses (HGO 0.23mm and HGO 0.18mm), comparing performances at a fixed induction level between the various situations may not be the most convenient method. The effect of magnetic domain refinement has been investigated. After having shown the interest of lowering the thickness, an alternative way of looking at losses is proposed that may help to design the magnetic core when it comes to the matter of reducing size in considering frequency and magnetization levels.

Attofarad resolution capacitance-voltage measurement of nanometer scale field effect transistors utilizing ambient noise.

PubMed

Gokirmak, Ali; Inaltekin, Hazer; Tiwari, Sandip

2009-08-19

A high resolution capacitance-voltage (C-V) characterization technique, enabling direct measurement of electronic properties at the nanoscale in devices such as nanowire field effect transistors (FETs) through the use of random fluctuations, is described. The minimum noise level required for achieving sub-aF (10(-18) F) resolution, the leveraging of stochastic resonance, and the effect of higher levels of noise are illustrated through simulations. The non-linear DeltaC(gate-source/drain)-V(gate) response of FETs is utilized to determine the inversion layer capacitance (C(inv)) and carrier mobility. The technique is demonstrated by extracting the carrier concentration and effective electron mobility in a nanoscale Si FET with C(inv) = 60 aF.

Miniature x-ray source

DOEpatents

Trebes, James E.; Bell, Perry M.; Robinson, Ronald B.

2000-01-01

A miniature x-ray source utilizing a hot filament cathode. The source has a millimeter scale size and is capable of producing broad spectrum x-ray emission over a wide range of x-ray energies. The miniature source consists of a compact vacuum tube assembly containing the hot filament cathode, an anode, a high voltage feedthru for delivering high voltage to the cathode, a getter for maintaining high vacuum, a connector for initial vacuum pump down and crimp-off, and a high voltage connection for attaching a compact high voltage cable to the high voltage feedthru. At least a portion of the vacuum tube wall is fabricated from highly x-ray transparent materials, such as sapphire, diamond, or boron nitride.

The transport systems of Ventricaria ventricosa: hypotonic and hypertonic turgor regulation.

PubMed

Bisson, M A; Beilby, M J

2002-11-01

The time course of hypertonic and hypotonic turgor regulation was studied in Ventricaria (Valonia) using pressure probe and I/V(current-voltage) analysis. Of 11 cells, 9 exhibited hypertonic turgor regulation, ranging from 100% regulation in 150 min to 14% regulation (14% recovery of the decrease in turgor) in 314 min. Some cells began regulating immediately, others took up to 90 min to begin. The resting PD (potential difference) became more positive in most cells. The I/V characteristics became more nonlinear with high resistance between -150 and -20 mV and negative conductance region near -70 mV. Prolonged (16 sec) voltage clamps to negative levels (-100 to -150 mV) showed progressively more rapid current turn-off, but subsequent I/V characteristics were not affected. Clamping to +150 mV, however, abolished the high conductance between -50 and +100 mV to yield a uniform high resistance I/V characteristic, similar to that in high [K+]o. Decreasing illumination from 2.02 micromol sec(-1) m(-2) to 0.5 micromol sec(-1)1 m(-2) had a similar effect. Two out of a total of three cells exhibited hypotonic turgor regulation. Both cells started regulating within minutes and achieved near 50% regulation within 50 min. The PD became more negative. The I/V curves exhibited high resistance between +50 and +150 mV. The characteristics were similar to those in cells exposed to low [K+]o. Prolonged voltage clamps to both negative and positive levels showed slow current increase. Decreased illumination increased the membrane resistance.

Oxidatively stable fluorinated sulfone electrolytes for high voltage high energy lithium-ion batteries

DOE PAGES

Su, Chi -Cheung; He, Meinan; Redfern, Paul C.; ...

2017-03-16

New fluorinated sulfones were synthesized and evaluated in high voltage lithium-ion batteries using LiNi 0.5Mn 1.5O 4 (LNMO) cathode. Fluorinated sulfones with an α-trifluoromethyl group exhibit enhanced oxidation stability, reduced viscosity and superior separator wettability as compared to their non-fluorinated counterparts. Finally, the improved performance in high voltage cells makes it a promising high voltage electrolyte for 5-V lithium-ion chemistry.

Synthesis of polymer nanostructures with conductance switching properties

DOEpatents

Su, Kai; Nuraje, Nurxat; Zhang, Lingzhi; Matsui, Hiroshi; Yang, Nan Loh

2015-03-03

The present invention is directed to crystalline organic polymer nanoparticles comprising a conductive organic polymer; wherein the crystalline organic polymer nanoparticles have a size of from 10 nm to 200 nm and exhibits two current-voltage states: (1) a high resistance current-voltage state, and (2) a low resistance current-voltage state, wherein when a first positive threshold voltage (V.sub.th1) or higher positive voltage, or a second negative threshold voltage (V.sub.th2) or higher negative voltage is applied to the nanoparticle, the nanoparticle exhibits the low-resistance current-voltage state, and when a voltage less positive than the first positive threshold voltage or a voltage less negative than the second negative threshold voltage is applied to the nanoparticle, the nanoparticle exhibits the high-resistance current-voltage state. The present invention is also directed methods of manufacturing the nanoparticles using novel interfacial oxidative polymerization techniques.

Charge-pump voltage converter

DOEpatents

Brainard, John P [Albuquerque, NM; Christenson, Todd R [Albuquerque, NM

2009-11-03

A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

High voltage spinel oxides for Li-ion batteries: From the material research to the application

NASA Astrophysics Data System (ADS)

Patoux, Sébastien; Daniel, Lise; Bourbon, Carole; Lignier, Hélène; Pagano, Carole; Le Cras, Frédéric; Jouanneau, Séverine; Martinet, Sébastien

Li-ion batteries are already used in many nomad applications, but improvement of this technology is still necessary to be durably introduced on new markets such as electric vehicles (EVs), hybrid electric vehicles (HEVs) or eventually photovoltaic solar cells. Modification of the nature of the active materials of electrodes is the most challenging and innovative aspect. High voltage spinel oxides for Li-ion batteries, with general composition LiMn 2- xM xO 4 (M a transition metal element), may be used to face increasing power source demand. It should be possible to obtain up to 240 Wh kg -1 at cell level when combining a nickel manganese spinel oxide with graphite (even more with silicon/carbon nanocomposites at the anode). Specific composition and material processing have to be selected with care, as discussed in this paper. It is demonstrated that 'LiNi 0.5Mn 1.5O 4' and LiNi 0.4Mn 1.6O 4 have remarkable properties such as high potential, high energy density, good cycle life and high rate capability. Choice of the electrolyte is also of primary importance in order to prevent its degradation at high voltage in contact with active surfaces. We showed that a few percents of additive in the electrolyte were suitable for protecting the positive electrode/electrolyte interface, and reducing the self-discharge. High voltage materials are also possibly interesting to be used in safe and high power Li-ion cells. In this case, the negative electrode may be made of Li 4Ti 5O 12 or TiO 2 to give a '3 V' system.

Coordinative Voltage Control Strategy with Multiple Resources for Distribution Systems of High PV Penetration: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Xiangqi; Zhang, Yingchen

This paper presents an optimal voltage control methodology with coordination among different voltage-regulating resources, including controllable loads, distributed energy resources such as energy storage and photovoltaics (PV), and utility voltage-regulating devices such as voltage regulators and capacitors. The proposed methodology could effectively tackle the overvoltage and voltage regulation device distortion problems brought by high penetrations of PV to improve grid operation reliability. A voltage-load sensitivity matrix and voltage-regulator sensitivity matrix are used to deploy the resources along the feeder to achieve the control objectives. Mixed-integer nonlinear programming is used to solve the formulated optimization control problem. The methodology has beenmore » tested on the IEEE 123-feeder test system, and the results demonstrate that the proposed approach could actively tackle the voltage problem brought about by high penetrations of PV and improve the reliability of distribution system operation.« less

Voltage assisted asymmetric nanoscale wear on ultra-smooth diamond like carbon thin films at high sliding speeds

PubMed Central

Rajauria, Sukumar; Schreck, Erhard; Marchon, Bruno

2016-01-01

The understanding of tribo- and electro-chemical phenomenons on the molecular level at a sliding interface is a field of growing interest. Fundamental chemical and physical insights of sliding surfaces are crucial for understanding wear at an interface, particularly for nano or micro scale devices operating at high sliding speeds. A complete investigation of the electrochemical effects on high sliding speed interfaces requires a precise monitoring of both the associated wear and surface chemical reactions at the interface. Here, we demonstrate that head-disk interface inside a commercial magnetic storage hard disk drive provides a unique system for such studies. The results obtained shows that the voltage assisted electrochemical wear lead to asymmetric wear on either side of sliding interface. PMID:27150446

Synthesis and Photovoltaic Properties of a Copolymer based on thieno [2, 3-f] benzofuran and thienopyrroledione

NASA Astrophysics Data System (ADS)

Gao, Yueyue; Yang, Yulin; Zhang, Yong

2017-12-01

A novel donor-acceptor type conjugated polymer PTBFTPD based on two-dimensional (2D) conjugated alkylthienyl substituted thieno[2,3-f]benzofuran (TBF) and thienopyrroledione (TPD) unit, was synthesized and applied as donor material for bulk heterojunction solar cells. The novol polymer possesses a narrow bandgap of 1.83 eV, a deep HOMO energy level (-5.64 eV) and a closer π-π stacking. After conventional devices were fabricated using PTBFTPD as donor blending with PC70BM as acceptor, a power conversion efficiency (PCE) of 4.33% with a high open circuit voltage (Voc) of 1.09 V was obtained. The result indicates the promising potential of thieno [2, 3-f] benzofuran unit for high efficient polymer solar cells with a high voltage.

Voltage assisted asymmetric nanoscale wear on ultra-smooth diamond like carbon thin films at high sliding speeds

NASA Astrophysics Data System (ADS)

Rajauria, Sukumar; Schreck, Erhard; Marchon, Bruno

2016-05-01

The understanding of tribo- and electro-chemical phenomenons on the molecular level at a sliding interface is a field of growing interest. Fundamental chemical and physical insights of sliding surfaces are crucial for understanding wear at an interface, particularly for nano or micro scale devices operating at high sliding speeds. A complete investigation of the electrochemical effects on high sliding speed interfaces requires a precise monitoring of both the associated wear and surface chemical reactions at the interface. Here, we demonstrate that head-disk interface inside a commercial magnetic storage hard disk drive provides a unique system for such studies. The results obtained shows that the voltage assisted electrochemical wear lead to asymmetric wear on either side of sliding interface.

High-frequency high-voltage high-power DC-to-DC converters

NASA Astrophysics Data System (ADS)

Wilson, T. G.; Owen, H. A., Jr.; Wilson, P. M.

1981-07-01

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

High-frequency high-voltage high-power DC-to-DC converters

NASA Technical Reports Server (NTRS)

Wilson, T. G.; Owen, H. A., Jr.; Wilson, P. M.

1981-01-01

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

Fabrication of (NH4)2S passivated GaAs metal-insulator-semiconductor devices using low-frequency plasma-enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Jaouad, A.; Aimez, V.; Aktik, Ç.; Bellatreche, K.; Souifi, A.

2004-05-01

Metal-insulator-semiconductor (MIS) capacitors were fabricated on n-GaAs(100) substrate using (NH4)2S surface passivation and low-frequency plasma-enhanced chemical vapor deposited silicon nitride as gate insulators. The electrical properties of the fabricated MIS capacitors were analyzed using high-frequency capacitance-voltage and conductance-voltage measurements. The high concentration of hydrogen present during low-frequency plasma deposition of silicon nitride enhances the passivation of GaAs surface, leading to the unpinning of the Fermi level and to a good modulation of the surface potential by gate voltage. The electrical properties of the insulator-semiconductor interface are improved after annealing at 450 °C for 60 s, as a significant reduction of the interface fixed charges and of the interface states density is put into evidence. The minimum interface states density was found to be about 3×1011 cm-2 eV-1, as estimated by the Terman method. .

30 CFR 77.704-3 - Work on energized high-voltage surface lines; reporting.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Work on energized high-voltage surface lines... OF UNDERGROUND COAL MINES Grounding § 77.704-3 Work on energized high-voltage surface lines...-voltage surface lines under the provisions of § 77.704-2 shall maintain a record of such repairs. Such...

30 CFR 77.807-2 - Booms and masts; minimum distance from high-voltage lines.

Code of Federal Regulations, 2010 CFR

2010-07-01

...-voltage lines. 77.807-2 Section 77.807-2 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-2 Booms and masts; minimum distance from high-voltage lines. The booms and masts of equipment operated on the surface of any...

Performance and Environmental Test Results of the High Voltage Hall Accelerator Engineering Development Unit

NASA Technical Reports Server (NTRS)

Kamhawi, Hani; Haag, Thomas; Huang, Wensheng; Shastry, Rohit; Pinero, Luis; Peterson, Todd; Mathers, Alex

2012-01-01

NASA Science Mission Directorate's In-Space Propulsion Technology Program is sponsoring the development of a 3.5 kW-class engineering development unit Hall thruster for implementation in NASA science and exploration missions. NASA Glenn and Aerojet are developing a high fidelity high voltage Hall accelerator that can achieve specific impulse magnitudes greater than 2,700 seconds and xenon throughput capability in excess of 300 kilograms. Performance, plume mappings, thermal characterization, and vibration tests of the high voltage Hall accelerator engineering development unit have been performed. Performance test results indicated that at 3.9 kW the thruster achieved a total thrust efficiency and specific impulse of 58%, and 2,700 sec, respectively. Thermal characterization tests indicated that the thruster component temperatures were within the prescribed material maximum operating temperature limits during full power thruster operation. Finally, thruster vibration tests indicated that the thruster survived the 3-axes qualification full-level random vibration test series. Pre and post-vibration test performance mappings indicated almost identical thruster performance. Finally, an update on the development progress of a power processing unit and a xenon feed system is provided.

DC High Voltage Conditioning of Photoemission Guns at Jefferson Lab FEL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hernandez-Garcia, C.; Benson, S. V.; Biallas, G.

2009-08-04

DC high voltage photoemission electron guns with GaAs photocathodes have been used to produce polarized electron beams for nuclear physics experiments for about 3 decades with great success. In the late 1990s, Jefferson Lab adopted this gun technology for a free electron laser (FEL), but to assist with high bunch charge operation, considerably higher bias voltage is required compared to the photoguns used at the Jefferson Lab Continuous Electron Beam Accelerator Facility. The FEL gun has been conditioned above 400 kV several times, albeit encountering non-trivial challenges with ceramic insulators and field emission from electrodes. Recently, high voltage processing withmore » krypton gas was employed to process very stubborn field emitters. This work presents a summary of the high voltage techniques used to high voltage condition the Jefferson Lab FEL photoemission gun.« less

Electro-optic high voltage sensor

DOEpatents

Davidson, James R.; Seifert, Gary D.

2002-01-01

A small sized electro-optic voltage sensor capable of accurate measurement of high levels of voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation into the sensor. A polarization beam displacer serves as a filter to separate the input beam into two beams with orthogonal linear polarizations. The beam displacer is oriented in such a way as to rotate the linearly polarized beams such that they enter a Pockels crystal having at a preferred angle of 45 degrees. The beam displacer is therefore capable of causing a linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels electro-optic effect induces a differential phase shift on the major and minor axes of the input beam as it travels through the Pockels crystal, which causes the input beam to be elliptically polarized. A reflecting prism redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization representing the major and minor axes. The system may include a detector for converting the output beams into electrical signals, and a signal processor for determining the voltage based on an analysis of the output beams. The output beams are amplitude modulated by the frequency of the electric field and the amplitude of the output beams is proportional to the magnitude of the electric field, which is related to the voltage being measured.

Electrostatic Vibration Energy Harvester Pre-charged Wirelessly at 2.45 GHz

NASA Astrophysics Data System (ADS)

Saddi, Z.; Takhedmit, H.; Karami, A.; Basset, P.; Cirio, L.

2016-11-01

This paper reports the design, fabrication and experiments of an electrostatic vibration harvester (e-VEH), pre-charged wirelessly for the first time by using an electromagnetic waves harvester at 2.4 GHz. The rectenna uses the Cockcroft-Walton voltage doubler rectifier. It is designed and optimized to operate at low power densities and provides high voltage levels: 0.5 V at 0.5 μW/cm2 and 0.8 V at 1 μW/cm2 The e-VEH uses the Bennet doubler as conditioning circuit. Experiments show 23 V voltage across the transducer terminal when the harvester is excited at 25 Hz by 1.5 g of external acceleration. An accumulated energy of 275 μJ and a maximum power of 0.4 μW are available for the load.

Graphene-gold supercapacitor as a voltage controlled saturable absorber for femtosecond pulse generation.

PubMed

Baylam, Isinsu; Balci, Osman; Kakenov, Nurbek; Kocabas, Coskun; Sennaroglu, Alphan

2016-03-01

We report, for the first time to the best of our knowledge, use of a graphene-gold supercapacitor as a voltage controlled fast saturable absorber for femtosecond pulse generation. The unique design involving only one graphene electrode lowers the insertion loss of the device, in comparison with capacitor designs with two graphene electrodes. Furthermore, use of the high-dielectric electrolyte allows reversible, adjustable control of the absorption level up to the visible region with low bias voltages of only a few volts (0-2 V). The fast saturable absorber action of the graphene-gold supercapacitor was demonstrated inside a multipass-cavity Cr:forsterite laser to generate nearly transform-limited, sub-100 fs pulses at a pulse repetition rate of 4.51 MHz at 1.24 μm.

Flexible Power Distribution Based on Point of Load Converters

NASA Astrophysics Data System (ADS)

Dhallewin, G.; Galiana, D.; Mollard, J. M.; Schaper, W.; Strixner, E.; Tonicello, F.; Triggianese, M.

2014-08-01

Present digital electronic loads require low voltages and suffer from high currents. In addition, they need several different voltage levels to supply the different parts of digital devices like the core, the input/output I/F, etc. Distributed Power Architectures (DPA) with point-of- load (POL) converters (synchronous buck type) offer excellent performance in term of efficiency and load step behaviour. They occupy little PCB area and are well suited for very low voltage (VLV) DC conversion (1V to 3.3V). The paper presents approaches to architectural design of POL based supplies including redundancy and protection as well as the requirements on a European hardware implementation. The main driver of the analysis is the flexibility of each element (DC/DC converter, protection, POL core) to cover a wide range of space applications.

Optimization of power systems with voltage security constraints

NASA Astrophysics Data System (ADS)

Rosehart, William Daniel

As open access market principles are applied to power systems, significant changes in their operation and control are occurring. In the new marketplace, power systems are operating under higher loading conditions as market influences demand greater attention to operating cost versus stability margins. Since stability continues to be a basic requirement in the operation of any power system, new tools are being considered to analyze the effect of stability on the operating cost of the system, so that system stability can be incorporated into the costs of operating the system. In this thesis, new optimal power flow (OPF) formulations are proposed based on multi-objective methodologies to optimize active and reactive power dispatch while maximizing voltage security in power systems. The effects of minimizing operating costs, minimizing reactive power generation and/or maximizing voltage stability margins are analyzed. Results obtained using the proposed Voltage Stability Constrained OPF formulations are compared and analyzed to suggest possible ways of costing voltage security in power systems. When considering voltage stability margins the importance of system modeling becomes critical, since it has been demonstrated, based on bifurcation analysis, that modeling can have a significant effect of the behavior of power systems, especially at high loading levels. Therefore, this thesis also examines the effects of detailed generator models and several exponential load models. Furthermore, because of its influence on voltage stability, a Static Var Compensator model is also incorporated into the optimization problems.

The New NASA-STD-4005 and NASA-HDBK-4006, Essentials for Direct-Drive Solar Electric Propulsion

NASA Technical Reports Server (NTRS)

Ferguson, Dale C.

2007-01-01

High voltage solar arrays are necessary for direct-drive solar electric propulsion, which has many advantages, including simplicity and high efficiency. Even when direct-drive is not used, the use of high voltage solar arrays leads to power transmission and conversion efficiencies in electric propulsion Power Management and Distribution. Nevertheless, high voltage solar arrays may lead to temporary power disruptions, through the so-called primary electrostatic discharges, and may permanently damage arrays, through the so-called permanent sustained discharges between array strings. Design guidance is needed to prevent these solar array discharges, and to prevent high power drains through coupling between the electric propulsion devices and the high voltage solar arrays. While most electric propulsion systems may operate outside of Low Earth Orbit, the plasmas produced by their thrusters may interact with the high voltage solar arrays in many ways similarly to Low Earth Orbit plasmas. A brief description of previous experiences with high voltage electric propulsion systems will be given in this paper. There are two new official NASA documents available free through the NASA Standards website to help in designing and testing high voltage solar arrays for electric propulsion. They are NASA-STD-4005, the Low Earth Orbit Spacecraft Charging Design Standard, and NASA-HDBK-4006, the Low Earth Orbit Spacecraft Charging Design Handbook. Taken together, they can both educate the high voltage array designer in the engineering and science of spacecraft charging in the presence of dense plasmas and provide techniques for designing and testing high voltage solar arrays to prevent electrical discharges and power drains.

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

NASA Astrophysics Data System (ADS)

Gao, Tao; Xu, Ruimin; Kong, Yuechan; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng

2015-06-01

We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr0.52Ti0.48)-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (gm-Vg) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.

Quick-low-density parity check and dynamic threshold voltage optimization in 1X nm triple-level cell NAND flash memory with comprehensive analysis of endurance, retention-time, and temperature variation

NASA Astrophysics Data System (ADS)

Doi, Masafumi; Tokutomi, Tsukasa; Hachiya, Shogo; Kobayashi, Atsuro; Tanakamaru, Shuhei; Ning, Sheyang; Ogura Iwasaki, Tomoko; Takeuchi, Ken

2016-08-01

NAND flash memory’s reliability degrades with increasing endurance, retention-time and/or temperature. After a comprehensive evaluation of 1X nm triple-level cell (TLC) NAND flash, two highly reliable techniques are proposed. The first proposal, quick low-density parity check (Quick-LDPC), requires only one cell read in order to accurately estimate a bit-error rate (BER) that includes the effects of temperature, write and erase (W/E) cycles and retention-time. As a result, 83% read latency reduction is achieved compared to conventional AEP-LDPC. Also, W/E cycling is extended by 100% compared with conventional Bose-Chaudhuri-Hocquenghem (BCH) error-correcting code (ECC). The second proposal, dynamic threshold voltage optimization (DVO) has two parts, adaptive V Ref shift (AVS) and V TH space control (VSC). AVS reduces read error and latency by adaptively optimizing the reference voltage (V Ref) based on temperature, W/E cycles and retention-time. AVS stores the optimal V Ref’s in a table in order to enable one cell read. VSC further improves AVS by optimizing the voltage margins between V TH states. DVO reduces BER by 80%.

Neuroactive Steroids: Receptor Interactions and Responses

PubMed Central

Tuem, Kald Beshir; Atey, Tesfay Mehari

2017-01-01

Neuroactive steroids (NASs) are naturally occurring steroids, which are synthesized centrally as de novo from cholesterol and are classified as pregnane, androstane, and sulfated neurosteroids (NSs). NASs modulate many processes via interacting with gamma-aminobutyric acid (GABA), N-methyl-d-aspartate, serotonin, voltage-gated calcium channels, voltage-dependent anion channels, α-adrenoreceptors, X-receptors of the liver, transient receptor potential channels, microtubule-associated protein 2, neurotrophin nerve growth factor, and σ1 receptors. Among these, NSs (especially allopregnanolone) have high potency and extensive GABA-A receptors and hence demonstrate anticonvulsant, anesthetic, central cytoprotectant, and baroreflex inhibitory effects. NSs are also involved in mood and learning via serotonin and anti-nociceptive activity via T-type voltage-gated Ca2+ channels. Moreover, they are modulators of mitochondrial function, synaptic plasticity, or regulators of apoptosis, which have a role in neuroprotective via voltage-dependent anion channels receptors. For proper functioning, NASs need to be in their normal level, whereas excess and deficiency may lead to abnormalities. When they are below the normal, NSs could have a part in development of depression, neuro-inflammation, multiple sclerosis, experimental autoimmune encephalitis, epilepsy, and schizophrenia. On the other hand, stress and attention deficit disorder could occur during excessive level. Overall, NASs are very important molecules with major neuropsychiatric activity. PMID:28894435

High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs

DOEpatents

Shimer, D.W.; Lange, A.C.

1995-05-23

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

DOEpatents

Shimer, Daniel W.; Lange, Arnold C.

1995-01-01

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

Physicochemical assessment criteria for high-voltage pulse capacitors

NASA Astrophysics Data System (ADS)

Darian, L. A.; Lam, L. Kh.

2016-12-01

In the paper, the applicability of decomposition products of internal insulation of high-voltage pulse capacitors is considered (aging is the reason for decomposition products of internal insulation). Decomposition products of internal insulation of high-voltage pulse capacitors can be used to evaluate their quality when in operation and in service. There have been three generations of markers of aging of insulation as in the case with power transformers. The area of applicability of markers of aging of insulation for power transformers has been studied and the area can be extended to high-voltage pulse capacitors. The research reveals that there is a correlation between the components and quantities of markers of aging of the first generation (gaseous decomposition products of insulation) dissolved in insulating liquid and the remaining life of high-voltage pulse capacitors. The application of markers of aging to evaluate the remaining service life of high-voltage pulse capacitor is a promising direction of research, because the design of high-voltage pulse capacitors keeps stability of markers of aging of insulation in high-voltage pulse capacitors. It is necessary to continue gathering statistical data concerning development of markers of aging of the first generation. One should also carry out research aimed at estimation of the remaining life of capacitors using markers of the second and the third generation.

DC arc weld starter

DOEpatents

Campiotti, Richard H.; Hopwood, James E.

1990-01-01

A system for starting an arc for welding uses three DC power supplies, a high voltage supply for initiating the arc, an intermediate voltage supply for sustaining the arc, and a low voltage welding supply directly connected across the gap after the high voltage supply is disconnected.

Effects of Electrode Material on the Voltage of a Tree-Based Energy Generator.

PubMed

Hao, Zhibin; Wang, Guozhu; Li, Wenbin; Zhang, Junguo; Kan, Jiangming

2015-01-01

The voltage between a standing tree and its surrounding soil is regarded as an innovative renewable energy source. This source is expected to provide a new power generation system for the low-power electrical equipment used in forestry. However, the voltage is weak, which has caused great difficulty in application. Consequently, the development of a method to increase the voltage is a key issue that must be addressed in this area of applied research. As the front-end component for energy harvesting, a metal electrode has a material effect on the level and stability of the voltage obtained. This study aimed to preliminarily ascertain the rules and mechanisms that underlie the effects of electrode material on voltage. Electrodes of different materials were used to measure the tree-source voltage, and the data were employed in a comparative analysis. The results indicate that the conductivity of the metal electrode significantly affects the contact resistance of the electrode-soil and electrode-trunk contact surfaces, thereby influencing the voltage level. The metal reactivity of the electrode has no significant effect on the voltage. However, passivation of the electrode materials markedly reduces the voltage. Suitable electrode materials are demonstrated and recommended.

[Design of a high-voltage insulation testing system of X-ray high frequency generators].

PubMed

Huang, Yong; Mo, Guo-Ming; Wang, Yan; Wang, Hong-Zhi; Yu, Jie-Ying; Dai, Shu-Guang

2007-09-01

In this paper, we analyze the transformer of X-ray high-voltage high-frequency generators and, have designed and implemented a high-voltage insulation testing system for its oil tank using full-bridge series resonant soft switching PFM DC-DC converter.

Design of a High Voltage Power Supply Providing a Force Field for a Fluid Experiment

NASA Astrophysics Data System (ADS)

Herty, Frank

2005-05-01

As part of the GeoFlow fluid experiment an ac high voltage power supply (HVPS) is used to establish high electrical fields on fluids based on silicon oil. The non- conductive fluid is encapsulated between two spherical electrodes. This experiment cell assembly acts essentially as a capacitive load.The GeoFlow HVPS is an integrated ac high voltage source capable to provide up to 10kVRMS on capacitive loads up to 100pF.This paper presents major design challenges and solutions regarding the high voltage transformer and its driver electronics. Particular high voltage problems like corona effects and dielectric losses are discussed and countermeasures are presented.

Series resonance inverter with triggered vacuum gaps

NASA Astrophysics Data System (ADS)

Damstra, Geert C.; Zhang, X.

1994-05-01

Series resonance inverters based on semi-conductor switching elements are well-known and have a wide range of application, mainly for lower voltages. For high voltage application many switching elements have to be put in series to obtain sufficient blocking voltage. Voltage grinding and multiple gate control elements are needed. There is much experience with the triggered vacuum gaps as high voltage/high current single shot elements, for example in reignition circuits for synthetic circuit breaker tests. These elements have a blocking voltage of 50 - 100 kV and are triggerable by a light fiber control device. A prototype inverter has been developed that generates 0.1 Hz, 30 kV AC voltages with a flat top for tests on cables and capacitors of many micro farads fed from a low voltage supply of about 600 V. Only two TVG elements are needed to switch the resonant circuit alternatively on the positive or negative supply. The resonant circuit itself consists of the capacitance of the testobject and a high quality inductor that determines the frequency and the peak current of the voltage reversing process.

Evaluating the potential of using quantum dots for monitoring electrical signals in neurons

NASA Astrophysics Data System (ADS)

Efros, Alexander L.; Delehanty, James B.; Huston, Alan L.; Medintz, Igor L.; Barbic, Mladen; Harris, Timothy D.

2018-04-01

Success in the projects aimed at providing an advanced understanding of the brain is directly predicated on making critical advances in nanotechnology. This Perspective addresses the unique interface of neuroscience and nanomaterials by considering the foundational problem of sensing neuron membrane voltage and offers a potential solution that may be facilitated by a prototypical nanomaterial. Despite substantial improvements, the visualization of instantaneous voltage changes within individual neurons, whether in cell culture or in vivo, at both the single-cell and network level at high speed remains complex and problematic. The unique properties of semiconductor quantum dots (QDs) have made them powerful fluorophores for bioimaging. What is not widely appreciated, however, is that QD photoluminescence is exquisitely sensitive to proximal electric fields. This property should be suitable for sensing voltage changes that occur in the active neuronal membrane. Here, we examine the potential role of QDs in addressing the important challenge of real-time optical voltage imaging.

Dendron engineering in self-host blue iridium dendrimers towards low-voltage-driving and power-efficient nondoped electrophosphorescent devices.

PubMed

Wang, Yang; Wang, Shumeng; Ding, Junqiao; Wang, Lixiang; Jing, Xiabin; Wang, Fosong

2016-12-20

Dendron engineering in self-host blue Ir dendrimers is reported to develop power-efficient nondoped electrophosphorescent devices for the first time, which can be operated at low voltage close to the theoretical limit (E g /e: corresponding to the optical bandgap divided by the electron charge). With increasing dendron's HOMO energy levels from B-POCz to B-CzCz and B-CzTA, effective hole injection is favored to promote exciton formation, resulting in a significant reduction of driving voltage and improvement of power efficiency. Consequently, the nondoped device of B-CzTA achieves extremely low driving voltages of 2.7/3.4/4.4 V and record high power efficiencies of 30.3/24.4/16.3 lm W -1 at 1, 100 and 1000 cd m -2 , respectively. We believe that this work will pave the way to the design of novel power-efficient self-host blue phosphorescent dendrimers used for energy-saving displays and solid-state lightings.

Capacitance-voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer

NASA Astrophysics Data System (ADS)

Ko, Seung-Pil; Shin, Jong Mok; Jang, Ho Kyun; You, Min Youl; Jin, Jun-Eon; Choi, Miri; Cho, Jiung; Kim, Gyu-Tae

2018-02-01

Doping effects in devices based on two-dimensional (2D) materials have been widely studied. However, detailed analysis and the mechanism of the doping effect caused by encapsulation layers has not been sufficiently explored. In this work, we present experimental studies on the n-doping effect in WSe2 field effect transistors (FETs) with a high-k encapsulation layer (Al2O3) grown by atomic layer deposition. In addition, we demonstrate the mechanism and origin of the doping effect. After encapsulation of the Al2O3 layer, the threshold voltage of the WSe2 FET negatively shifted with the increase of the on-current. The capacitance-voltage measurements of the metal insulator semiconductor (MIS) structure proved the presence of the positive fixed charges within the Al2O3 layer. The flat-band voltage of the MIS structure of Au/Al2O3/SiO2/Si was shifted toward the negative direction on account of the positive fixed charges in the Al2O3 layer. Our results clearly revealed that the fixed charges in the Al2O3 encapsulation layer modulated the Fermi energy level via the field effect. Moreover, these results possibly provide fundamental ideas and guidelines to design 2D materials FETs with high-performance and reliability.

Zero-voltage DC/DC converter with asymmetric pulse-width modulation for DC micro-grid system

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren

2018-04-01

This paper presents a zero-voltage switching DC/DC converter for DC micro-grid system applications. The proposed circuit includes three half-bridge circuit cells connected in primary-series and secondary-parallel in order to lessen the voltage rating of power switches and current rating of rectifier diodes. Thus, low voltage stress of power MOSFETs can be adopted for high-voltage input applications with high switching frequency operation. In order to achieve low switching losses and high circuit efficiency, asymmetric pulse-width modulation is used to turn on power switches at zero voltage. Flying capacitors are used between each circuit cell to automatically balance input split voltages. Therefore, the voltage stress of each power switch is limited at Vin/3. Finally, a prototype is constructed and experiments are provided to demonstrate the circuit performance.

Observation of Dust Stream Formation Produced by Low Current, High Voltage Cathode Spots

NASA Technical Reports Server (NTRS)

Foster, John E.

2004-01-01

Macro-particle acceleration driven by low current, high voltage cathode spots has been investigated. The phenomenon was observed to occur when nanometer and micrometer-sized particles in the presence of a discharge plasma were exposed to a high voltage pulse. The negative voltage pulse initiates the formation of multiple, high voltage, low current cathode spots which provides the mechanism of actual acceleration of the charged dust particles. Dust streams generated by this process were detected using laser scattering techniques. The particle impact craters observed at the surface of downstream witness badges were documented using SEM and light microscopy.

Reliable low-cost battery voltage indicator for light aircraft and automobiles

NASA Technical Reports Server (NTRS)

Miller, R. L.

1973-01-01

Voltage indicator fits into cigarette lighter socket and utilizes light emitting and Zener diodes to display three levels of battery voltage. Indicator is superior to typical conventional electrical system indicators in that it gives a positive discrete indication of battery voltage. It is simple, inexpensive, and rugged.

High Voltage Hybrid Electric Propulsion - Multilayered Functional Insulation System (MFIS) NASA-GRC

NASA Technical Reports Server (NTRS)

Lizcano, M.

2017-01-01

High power transmission cables pose a key challenge in future Hybrid Electric Propulsion Aircraft. The challenge arises in developing safe transmission lines that can withstand the unique environment found in aircraft while providing megawatts of power. High voltage AC, variable frequency cables do not currently exist and present particular electrical insulation challenges since electrical arcing and high heating are more prevalent at higher voltages and frequencies. Identifying and developing materials that maintain their dielectric properties at high voltage and frequencies is crucial.

Megawatt Space Power Conditioning, Distribution, and Control Study

DTIC Science & Technology

1988-03-01

also must be given to the design of an ac transmission line for this relatively high frequency . 2.3.2 Medium High Voltage Systems. Figure 2-4 shows a...systems are designed to exploit the use of 2 MW klystrode tubes (see Section 3.1) which require a dc voltage of about 140 kV. This high voltage can be...the concerns is that to date there have been no three-phase high voltage, high frequency transmission lines designed . Figure 5-6. While the previous

Trap Healing for High-Performance Low-Voltage Polymer Transistors and Solution-Based Analog Amplifiers on Foil.

PubMed

Pecunia, Vincenzo; Nikolka, Mark; Sou, Antony; Nasrallah, Iyad; Amin, Atefeh Y; McCulloch, Iain; Sirringhaus, Henning

2017-06-01

Solution-processed semiconductors such as conjugated polymers have great potential in large-area electronics. While extremely appealing due to their low-temperature and high-throughput deposition methods, their integration in high-performance circuits has been difficult. An important remaining challenge is the achievement of low-voltage circuit operation. The present study focuses on state-of-the-art polymer thin-film transistors based on poly(indacenodithiophene-benzothiadiazole) and shows that the general paradigm for low-voltage operation via an enhanced gate-to-channel capacitive coupling is unable to deliver high-performance device behavior. The order-of-magnitude longitudinal-field reduction demanded by low-voltage operation plays a fundamental role, enabling bulk trapping and leading to compromised contact properties. A trap-reduction technique based on small molecule additives, however, is capable of overcoming this effect, allowing low-voltage high-mobility operation. This approach is readily applicable to low-voltage circuit integration, as this work exemplifies by demonstrating high-performance analog differential amplifiers operating at a battery-compatible power supply voltage of 5 V with power dissipation of 11 µW, and attaining a voltage gain above 60 dB at a power supply voltage below 8 V. These findings constitute an important milestone in realizing low-voltage polymer transistors for solution-based analog electronics that meets performance and power-dissipation requirements for a range of battery-powered smart-sensing applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Experimental Evaluation and Comparison of Thermal Conductivity of High-Voltage Insulation Materials for Vacuum Electronic Devices

NASA Astrophysics Data System (ADS)

Suresh, C.; Srikrishna, P.

2017-07-01

Vacuum electronic devices operate with very high voltage differences between their sub-assemblies which are separated by very small distances. These devices also emit large amounts of heat that needs to be dissipated. Hence, there exists a requirement for high-voltage insulators with good thermal conductivity for voltage isolation and efficient heat dissipation. However, these voltage insulators are generally poor conductors of heat. In the present work, an effort has been made to obtain good high-voltage insulation materials with substantial improvement in their thermal conductivity. New mixtures of composites were formed by blending varying percentages (by volumes) of aluminum nitride powders with that of neat room-temperature vulcanizing (RTV) silicone elastomer compound. In this work, a thermal conductivity test setup has been devised for the quantification of the thermal conductivity of the insulators. The thermal conductivities and high-voltage isolation capabilities of various blended composites were quantified and were compared with that of neat RTV to evaluate the relative improvement.

Thermoelectric devices and applications for the same

DOEpatents

DeSteese, John G [Kennewick, WA; Olsen, Larry C [Richland, WA; Martin, Peter M [Kennewick, WA

2010-12-14

High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.

Thermoelectric devices and applications for the same

DOEpatents

Olsen, Larry C.; DeSteese, John G.; Martin, Peter M.; Johnston, John W.; Peters, Timothy J.

2016-03-08

High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.

Post-Treatment-Free Solution-Processed Reduced Phosphomolybdic Acid Containing Molybdenum Oxide Units for Efficient Hole-Injection Layers in Organic Light-Emitting Devices.

PubMed

Ohisa, Satoru; Endo, Kohei; Kasuga, Kosuke; Suzuki, Michinori; Chiba, Takayuki; Pu, Yong-Jin; Kido, Junji

2018-02-19

We report the development of solution-processed reduced phosphomolybdic acid (rPMA) containing molybdenum oxide units for post-treatment-free hole-injection layers (HILs) in organic light-emitting devices (OLEDs). The physical and chemical properties of rPMA, including its structure, solubility in several solvents, film surface roughness, work function, and valence states, were investigated. The formation of gap states just below the Fermi level of rPMA was observed. Without any post-treatment after the formation of rPMA films, OLEDs employing rPMA as an HIL exhibited a very low driving voltage and a high luminous efficiency. The low driving voltage was attributed to the energy level alignment between the gap states formed by reduction and the HOMO level of the hole-transport layer material N,N'-bis(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine.

A novel two-level dielectric barrier discharge reactor for methyl orange degradation.

PubMed

Tao, Xumei; Wang, Guowei; Huang, Liang; Ye, Qingguo; Xu, Dongyan

2016-12-15

A novel pilot two-level dielectric barrier discharge (DBD) reactor has been proposed and applied for degradation of continuous model wastewater. The two-level DBD reactor was skillfully realized with high space utilization efficiency and large contact area between plasma and wastewater. Various conditions such as applied voltage, initial concentration and initial pH value on methyl orange (MO) model wastewater degradation were investigated. The results showed that the appropriate applied voltage was 13.4 kV; low initial concentration and low initial pH value were conducive for MO degradation. The percentage removal of 4 L MO with concentration of 80 mg/L reached 94.1% after plasma treatment for 80min. Based on ultraviolet spectrum (UV), Infrared spectrum (IR), liquid chromatography-mass spectrometry (LC-MS) analysis of degradation intermediates and products, insights in the degradation pathway of MO were proposed. Copyright © 2016 Elsevier Ltd. All rights reserved.

Resonant tunneling through discrete quantum states in stacked atomic-layered MoS2.

PubMed

Nguyen, Linh-Nam; Lan, Yann-Wen; Chen, Jyun-Hong; Chang, Tay-Rong; Zhong, Yuan-Liang; Jeng, Horng-Tay; Li, Lain-Jong; Chen, Chii-Dong

2014-05-14

Two-dimensional crystals can be assembled into three-dimensional stacks with atomic layer precision, which have already shown plenty of fascinating physical phenomena and been used for prototype vertical-field-effect-transistors.1,2 In this work, interlayer electron tunneling in stacked high-quality crystalline MoS2 films were investigated. A trilayered MoS2 film was sandwiched between top and bottom electrodes with an adjacent bottom gate, and the discrete energy levels in each layer could be tuned by bias and gate voltages. When the discrete energy levels aligned, a resonant tunneling peak appeared in the current-voltage characteristics. The peak position shifts linearly with perpendicular magnetic field, indicating formation of Landau levels. From this linear dependence, the effective mass and Fermi velocity are determined and are confirmed by electronic structure calculations. These fundamental parameters are useful for exploitation of its unique properties.

High voltage solar array experiments

NASA Technical Reports Server (NTRS)

Kennerud, K. L.

1974-01-01

The interaction between the components of a high voltage solar array and a simulated space plasma is studied to obtain data for the design of a high voltage solar array capable of 15kW at 2 to 16kV. Testing was conducted in a vacuum chamber 1.5-m long by 1.5-m diameter having a plasma source which simulated the plasma conditions existing in earth orbit between 400 nautical miles and synchronous altitude. Test samples included solar array segments pinholes in insulation covering high voltage electrodes, and plain dielectric samples. Quantitative data are presented in the areas of plasma power losses, plasma and high voltage induced damage, and dielectric properties. Limitations of the investigation are described.

16 CFR 1505.6 - Performance.

Code of Federal Regulations, 2010 CFR

2010-01-01

... horizontal. No spillage of molten material or hot liquids from containers shall occur while the toy is... breakdown for 1 minute a sinusoidal test potential applied between the high-voltage and low-voltage windings... volts plus twice the rated voltage of the high-voltage winding. The test potential shall be supplied...

Electrical power inverter having a phase modulated, twin-inverter, high frequency link and an energy storage module

DOEpatents

Pitel, Ira J.

1987-02-03

The present invention provides an electrical power inverter method and apparatus, which includes a high frequency link, for converting DC power into AC power. Generally stated, the apparatus includes a first high frequency module which produces an AC voltage at a first output frequency, and a second high frequency inverter module which produces an AC voltage at a second output frequency that is substantially the same as the first output frequency. The second AC voltage is out of phase with the first AC voltage by a selected angular phase displacement. A mixer mixes the first and second output voltages to produce a high frequency carrier which has a selected base frequency impressed on the sidebands thereof. A rectifier rectifies the carrier, and a filter filters the rectified carrier. An output inverter inverts the filtered carrier to produce an AC line voltage at the selected base frequency. A phase modulator adjusts the relative angular phase displacement between the outputs of the first and second high frequency modules to control the base frequency and magnitude of the AC line voltage.

Electrical power inverter having a phase modulated, twin-inverter, high frequency link and an energy storage module

DOEpatents

Pitel, I.J.

1987-02-03

The present invention provides an electrical power inverter method and apparatus, which includes a high frequency link, for converting DC power into AC power. Generally stated, the apparatus includes a first high frequency module which produces an AC voltage at a first output frequency, and a second high frequency inverter module which produces an AC voltage at a second output frequency that is substantially the same as the first output frequency. The second AC voltage is out of phase with the first AC voltage by a selected angular phase displacement. A mixer mixes the first and second output voltages to produce a high frequency carrier which has a selected base frequency impressed on the sidebands thereof. A rectifier rectifies the carrier, and a filter filters the rectified carrier. An output inverter inverts the filtered carrier to produce an AC line voltage at the selected base frequency. A phase modulator adjusts the relative angular phase displacement between the outputs of the first and second high frequency modules to control the base frequency and magnitude of the AC line voltage. 19 figs.

Electrochemical capacitance voltage measurements in highly doped silicon and silicon-germanium alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sermage, B.; Essa, Z.; Taleb, N.

2016-04-21

The electrochemical capacitance voltage technique has been used on highly boron doped SiGe and Si layers. Although the boron concentration is constant over the space charge depth, the 1/C{sup 2} versus voltage curves are not linear. They indeed present a negative curvature. This can be explained by the existence of deep acceptors which ionise under a high electric field (large inverse voltage) and not at a low inverse voltage. The measured doping concentration in the electrochemical capacitance voltage increases strongly as the inverse voltage increases. Thanks to a comparison with the boron concentration measured by secondary ions mass spectrometry, wemore » show that the relevant doping concentrations in device layers are obtained for small inverse voltage in agreement with the existence of deep acceptors. At the large inverse voltage, the measured doping can be more than twice larger than the boron concentration measured with a secondary ion mass spectroscopy.« less

Interface traps contribution on transport mechanisms under illumination in metal-oxide-semiconductor structures based on silicon nanocrystals

NASA Astrophysics Data System (ADS)

Chatbouri, S.; Troudi, M.; Kalboussi, A.; Souifi, A.

2018-02-01

The transport phenomena in metal-oxide-semiconductor (MOS) structures having silicon nanocrystals (Si-NCs) inside the dielectric layer have been investigated, in dark condition and under visible illumination. At first, using deep-level transient spectroscopy (DLTS), we find the presence of series electron traps having very close energy levels (comprised between 0.28 and 0.45 eV) for ours devices (with/without Si-NCs). And a single peak appears at low temperature only for MOS with Si-NCs related to Si-NCs DLTS response. In dark condition, the conduction mechanism is dominated by the thermionic fast emission/capture of charge carriers from the highly doped polysilicon layer to Si-substrate through interface trap states for MOS without Si-NCs. The tunneling of charge carriers from highly poly-Si to Si substrate trough the trapping/detrapping mechanism in the Si-NCs, at low temperature, contributed to the conduction mechanism for MOS with Si-NCs. The light effect on transport mechanisms has been investigated using current-voltage ( I- V), and high frequency capacitance-voltage ( C- V) methods. We have been marked the photoactive trap effect in inversion zone at room temperature in I- V characteristics, which confirm the contribution of photo-generated charge on the transport mechanisms from highly poly-Si to Si substrate trough the photo-trapping/detrapping mechanism in the Si-NCs and interfaces traps levels. These results have been confirmed by an increasing about 10 pF in capacity's values for the C- V characteristics of MOS with Si-NCs, in the inversion region for inverse high voltage applied under photoexcitation at low temperature. These results are helpful to understand the principle of charge transport in dark condition and under illumination, of MOS structures having Si-NCs in the SiO x = 1.5 oxide matrix.

Physicochemical assessment criteria for high-voltage pulse capacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darian, L. A., E-mail: LDarian@rambler.ru; Lam, L. Kh.

In the paper, the applicability of decomposition products of internal insulation of high-voltage pulse capacitors is considered (aging is the reason for decomposition products of internal insulation). Decomposition products of internal insulation of high-voltage pulse capacitors can be used to evaluate their quality when in operation and in service. There have been three generations of markers of aging of insulation as in the case with power transformers. The area of applicability of markers of aging of insulation for power transformers has been studied and the area can be extended to high-voltage pulse capacitors. The research reveals that there is amore » correlation between the components and quantities of markers of aging of the first generation (gaseous decomposition products of insulation) dissolved in insulating liquid and the remaining life of high-voltage pulse capacitors. The application of markers of aging to evaluate the remaining service life of high-voltage pulse capacitor is a promising direction of research, because the design of high-voltage pulse capacitors keeps stability of markers of aging of insulation in high-voltage pulse capacitors. It is necessary to continue gathering statistical data concerning development of markers of aging of the first generation. One should also carry out research aimed at estimation of the remaining life of capacitors using markers of the second and the third generation.« less

Arc lamp power supply using a voltage multiplier

NASA Technical Reports Server (NTRS)

Leighty, Bradley D.

1988-01-01

A power supply is provided for an arc discharge lamp which includes a relatively low voltage high current power supply section and a high voltage starter circuit. The low voltage section includes a transformer, rectifier, variable resistor and a bank of capacitors, while the starter circuit comprises several diodes and capacitors connected as a Cockcroft-Walton multiplier. The starting circuit is effectively bypassed when the lamp arc is established and serves to automatically provide a high starting voltage to re-strike the lamp arc if the arc is extinguished by a power interruption.

Electrolyte for high voltage Li/LiMn 1.9Co 0.1O 4 cells

NASA Astrophysics Data System (ADS)

Hayashi, Katsuya; Nemoto, Yasue; Tobishima, Shin-ichi; Yamaki, Jun-ichi

An electrolyte for high voltage lithium metal anode cells must simultaneously satisfy at least the following requirements; (i) high cycling efficiency on the lithium metal anode; (ii) higher oxidation potential than the charging voltage, and (iii) high specific conductivity. We have examined various electrolytes for lithium metal anode cells using a high voltage cathode, LiMn 1.9Co 0.1O 4. Of the electrolytes resistant to high voltage that we used, a system containing 60 to 90 vol.% of dimethyl carbonate (DMC) mixed with ethylene carbonate (EC) and 1.0 M lithium hexafluorophosphate (LiPF 6) provided the best cycling efficiency on a lithium metal anode, as well as a high specific conductivity around 10 mS cm -1 at 20 °C.

78 FR 23335 - Energy Conservation Program: Energy Conservation Standards for Distribution Transformers

Federal Register 2010, 2011, 2012, 2013, 2014

2013-04-18

... Basic Impulse Level 4. Dual/Multiple-Voltage Primary Windings 5. Dual/Multiple-Voltage Secondary Windings 6. Loading B. Technological Feasibility 1. General 2. Maximum Technologically Feasible Levels C...

A study on stimulation of DC high voltage power of LCC series parallel resonant in projectile velocity measurement system

NASA Astrophysics Data System (ADS)

Lu, Dong-dong; Gu, Jin-liang; Luo, Hong-e.; Xia, Yan

2017-10-01

According to specific requirements of the X-ray machine system for measuring velocity of outfield projectile, a DC high voltage power supply system is designed for the high voltage or the smaller current. The system comprises: a series resonant circuit is selected as a full-bridge inverter circuit; a high-frequency zero-current soft switching of a high-voltage power supply is realized by PWM output by STM32; a nanocrystalline alloy transformer is chosen as a high-frequency booster transformer; and the related parameters of an LCC series-parallel resonant are determined according to the preset parameters of the transformer. The concrete method includes: a LCC series parallel resonant circuit and a voltage doubling circuit are stimulated by using MULTISM and MATLAB; selecting an optimal solution and an optimal parameter of all parts after stimulation analysis; and finally verifying the correctness of the parameter by stimulation of the whole system. Through stimulation analysis, the output voltage of the series-parallel resonant circuit gets to 10KV in 28s: then passing through the voltage doubling circuit, the output voltage gets to 120KV in one hour. According to the system, the wave range of the output voltage is so small as to provide the stable X-ray supply for the X-ray machine for measuring velocity of outfield projectile. It is fast in charging and high in efficiency.

Investigation of the Effects of Cathode Flow Fraction and Position on the Performance and Operation of the High Voltage Hall Accelerator

NASA Technical Reports Server (NTRS)

Kamhawi, Hani; Huang, Wensheng; Haag, Thomas

2014-01-01

The National Aeronautics and Space Administration (NASA) Science Mission Directorate In- Space Propulsion Technology office is sponsoring NASA Glenn Research Center (GRC) to develop a 4 kW-class Hall thruster propulsion system for implementation in NASA science missions. Tests were performed within NASA GRC Vacuum Facility 5 at background pressure levels that were six times lower than what has previously been attained in other vacuum facilities. A study was conducted to assess the impact of varying the cathode-to-anode flow fraction and cathode position on the performance and operational characteristics of the High Voltage Hall Accelerator (HiVHAc) thruster. In addition, the impact of injecting additional xenon propellant in the vicinity of the cathode was also assessed. Cathode-to-anode flow fraction sensitivity tests were performed for power levels between 1.0 and 3.9 kW. It was found that varying the cathode flow fraction from 5 to approximately 10% of the anode flow resulted in the cathode-to-ground voltage becoming more positive. For an operating condition of 3.8 kW and 500 V, varying the cathode position from a distance of closest approach to 600 mm away did not result in any substantial variation in thrust but resulted in the cathode-to-ground changing from -17 to -4 V. The change in the cathode-to-ground voltage along with visual observations indicated a change in how the cathode plume was coupling to the thruster discharge. Finally, the injection of secondary xenon flow in the vicinity of the cathode had an impact similar to increasing the cathode-to-anode flow fraction, where the cathode-to-ground voltage became more positive and discharge current and thrust increased slightly. Future tests of the HiVHAc thruster are planned with a centrally mounted cathode in order to further assess the impact of cathode position on thruster performance.

Modeling, Development and Control of Multilevel Converters for Power System Application =

NASA Astrophysics Data System (ADS)

Vahedi, Hani

The main goal of this project is to develop a multilevel converter topology to be useful in power system applications. Although many topologies are introduced rapidly using a bunch of switches and isolated dc sources, having a single-dc-source multilevel inverter is still a matter of controversy. In fact, each isolated dc source means a bulky transformer and a rectifier that have their own losses and costs forcing the industries to avoid entering in this topic conveniently. On the other hand, multilevel inverters topologies with single-dc-source require associated controllers to regulate the dc capacitors voltages in order to have multilevel voltage waveform at the output. Thus, a complex controller would not interest investors properly. Consequently, developing a single-dc-source multilevel inverter topology along with a light and reliable voltage control is still a challenging topic to replace the 2-level inverters in the market effectively. The first effort in this project was devoted to the PUC7 inverter to design a simple and yet efficient controller. A new modelling is performed on the PUC7 inverter and it has been simplified to first order system. Afterwards, a nonlinear cascaded controller is designed and applied to regulate the capacitor voltage at 1/3 of the DC source amplitude and to generate 7 identical voltage levels at the output supplying different type of loads such as RL or rectifier harmonic ones. In next work, the PUC5 topology is proposed as a remedy to the PUC7 that requires a complicated controller to operate properly. The capacitor voltage is regulated at half of dc source amplitude to generate 5 voltage levels at the output. Although the 7-level voltage waveform is replaced by a 5-level one in PUC5 topology, it is shown that the PUC5 needs a very simple and reliable voltage balancing technique due to having some redundant switching states. Moreover, a sensor-less voltage balancing technique is designed and implemented on the PUC5 inverter successfully to work in both stand-alone and gridconnected mode of operation. Eventually, a modified configuration of the PUC5 topology is presented to work as a buck PFC rectifier. The internal performance of the rectifier is like a buck converter to generate stepped down DC voltages at the two output terminals while the grid sees a boost converter externally. As well, a decoupled voltage/current controller is designed and applied to balance the output voltages identically and synchronize the input current with grid voltage to have a PFC operation acceptably. A power balance analysis is done to show the load variation range limit. All the theoretical and simulation studies are validated by experimental results completely.

Ca currents activated by spontaneous firing and synaptic disinhibition in neurons of the cerebellar nuclei

PubMed Central

Zheng, Nan; Raman, Indira M.

2009-01-01

In neurons of the cerebellar nuclei, long-term potentiation of EPSCs is induced by high-frequency synaptic excitation by mossy fibers followed by synaptic inhibition by Purkinje cells. Induction requires activation of synaptic receptors as well as voltage-gated Ca channels. To examine how Purkinje-mediated inhibition of nuclear neurons affects Ca levels during plasticity-inducing stimuli, we have combined electrophysiology, Ca imaging, and pharmacology of cerebellar nuclear neurons in mouse cerebellar slices. We find that spontaneous firing generates tonic Ca signals in both somata and dendrites, which drop during 500-ms, 100-Hz trains of Purkinje IPSPs or hyperpolarizing steps. Although the presence of low-voltage-activated (T-type) Ca channels in nuclear neurons has fostered the inference that disinhibition activates these channels, synaptic inhibition with a physiological ECl (−75 mV) fails to hyperpolarize neurons sufficiently for T-type channels to recover substantially. Consequently, after IPSPs, Ca signals return to baseline, although firing is accelerated by ∼20 Hz for ∼300 ms. Only after hyperpolarizations beyond ECl does Ca rise gradually beyond baseline, as firing further exceeds spontaneous rates. Cd2+ (100 μM), which nearly eliminates L-type, N-type, P/Q-type, and R-type Ca currents while sparing about half the T-type current, prevents Ca changes during and after hyperpolarizations to ECl. Thus, high-frequency IPSPs in cerebellar nuclear neurons evoke little post-inhibitory current through T-type channels. Instead, inhibition regulates Ca levels simply by preventing action potentials, which usually permit Ca influx through high-voltage-activated channels. The decreases and restoration of Ca levels associated with Purkinje-mediated inhibition are likely to contribute to synaptic plasticity. PMID:19657035

Simultaneous determination of carisoprodol and acetaminophen in an attempted suicide by liquid chromatography-mass spectrometry with positive electrospray ionization.

PubMed

Matsumoto, Tomohiro; Sano, Toshiyuki; Matsuoka, Toshiyasu; Aoki, Minoru; Maeno, Yoshitaka; Nagao, Masataka

2003-03-01

An adult female ingested a considerable quantity of carisoprodol/acetaminophen tablets, which are not commercially available in Japan, in an attempt to commit suicide. Generally, because of lack of the appreciable ultraviolet absorbance or fluorescence, carisoprodol and its major metabolite meprobamate are determined by gas chromatography or gas chromatography-mass spectrometry. Complicated derivatization is, however, necessary to that methodology. Thus, we investigated the derivatization-free, highly sensitive, and simultaneous determination of carisoprodol, meprobamate, and acetaminophen by means of liquid chromatography-mass spectrometry (LC-MS) with positive electrospray ionization. A semi-micro ODS column was used. Ammonium acetate solution (10mM) and acetonitrile were used as mobile phase at a flow rate of 150 microL/min using gradient elution. MS parameters were as follows: capillary voltage, 3.5 kV; cone voltage, +30 V; extractor voltage, 5 kV; and ion source temperature, 100 degrees C. Urine samples pretreated by Oasis HLB cartridge, or plasma samples deproteinized by adding ice-cold acetonitrile were analyzed by LC-MS. The limits of quantitation for each compound were as follows: 0.50 ng/mL for carisoprodol; 10 ng/mL for acetaminophen; and 1.0 ng/mL for meprobamate. In the present case, carisoprodol and acetaminophen were the only drugs detected. Meprobamate was also found as the metabolite of carisoprodol in both urine and plasma. The plasma levels of carisoprodol, acetaminophen, and meprobamate on arrival were 29.5, 245, and 46.7 microg/mL, respectively. These levels were extremely high compared with therapeutic plasma concentrations. Despite the high plasma concentrations of these drugs, which correspond to fatal levels, the patient survived.

Ferroresonant flux coupled battery charger

NASA Technical Reports Server (NTRS)

McLyman, Colonel W. T. (Inventor)

1987-01-01

A battery charger for incorporation into an electric-powered vehicle is disclosed. The charger includes a ferroresonant voltage-regulating circuit for providing an output voltage proportional to the frequency of an input AC voltage. A high frequency converter converts a DC voltage supplied, for example, from a rectifier connected to a standard AC outlet, to a controlled frequency AC voltage which is supplied to the input of the ferroresonant circuit. The ferroresonant circuit includes an output, a saturable core transformer connected across the output, and a first linear inductor and a capacitor connected in series across the saturable core transformer and tuned to resonate at the third harmonic of the AC voltage from the high frequency converter. The ferroresonant circuit further includes a second linear inductor connected between the input of the ferroresonant circuit and the saturable core transformer. The output voltage from the ferroresonant circuit is rectified and applied across a pair of output terminals adapted to be connected to the battery to be charged. A feedback circuit compares the voltage across the output terminals with a reference voltage and controls the frequency of the AC voltage produced by the high frequency converter to maintain the voltage across the output terminals at a predetermined value. The second linear inductor provides a highly reactive load in the event of a fault across the output terminals to render the charger short-circuit proof.

Hypsarrhythmia assessment exhibits poor interrater reliability: a threat to clinical trial validity.

PubMed

Hussain, Shaun A; Kwong, Grace; Millichap, John J; Mytinger, John R; Ryan, Nicole; Matsumoto, Joyce H; Wu, Joyce Y; Lerner, Jason T; Sankar, Raman

2015-01-01

Hypsarrhythmia is the classic interictal electroencephalographic pattern associated with infantile spasms, and characterized by high voltage, disorganization, and multifocal independent epileptiform discharges. Given this seemingly simple definition, one might expect excellent interrater reliability (IRR) in the identification of this pattern. Alternatively, it may be argued that assessments of voltage and disorganization are fairly subjective, and thus quite challenging in borderline cases. We sought to test the IRR of hypsarrhythmia assessment in a systematic fashion. Six blinded pediatric electroencephalographers from four centers reviewed 22 electroencephalography (EEG) samples from patients with infantile spasms. Each sample was 5 min in duration and included only wakefulness. Raters determined if each EEG was abnormal and if hypsarrhythmia was present/absent, and characterized relevant features: voltage, organization, epileptiform discharges, slowing, interictal attenuations, symmetry, and synchrony. In addition, raters indicated their level of confidence for each assessment. Multirater kappa statistics (κ) were calculated for the assessment of hypsarrhythmia and each feature. Although IRR was favorable in determining whether a study was normal or abnormal (κ=0.89), reliability was unfavorable for assessment of hypsarrhythmia (κ=0.40), modified hypsarrhythmia (κ=0.47), high voltage (κ=0.37), disorganization (κ=0.22), multifocal epileptiform discharges (κ=0.68), interictal voltage attenuations (κ=0.21), slowing (κ=0.20), asymmetry (κ=0.26), and asynchrony (κ=0.08). Despite generally unsatisfactory interrater agreement, raters consistently reported high confidence in assessments. This study contradicts the view that hypsarrhythmia assessment is straightforward. Even small variability in the identification of hypsarrhythmia has potentially deleterious consequences for clinical care, as its presence or absence impacts decisions to pursue high-risk and high-cost therapies. These inconsistencies may similarly confound studies in which abolition of hypsarrhythmia is an outcome measure. There is a great need for practical, reliable, and unbiased measures of hypsarrhythmia. Wiley Periodicals, Inc. © 2014 International League Against Epilepsy.

Commutation circuit for an HVDC circuit breaker

DOEpatents

Premerlani, William J.

1981-01-01

A commutation circuit for a high voltage DC circuit breaker incorporates a resistor capacitor combination and a charging circuit connected to the main breaker, such that a commutating capacitor is discharged in opposition to the load current to force the current in an arc after breaker opening to zero to facilitate arc interruption. In a particular embodiment, a normally open commutating circuit is connected across the contacts of a main DC circuit breaker to absorb the inductive system energy trapped by breaker opening and to limit recovery voltages to a level tolerable by the commutating circuit components.

Commutation circuit for an HVDC circuit breaker

DOEpatents

Premerlani, W.J.

1981-11-10

A commutation circuit for a high voltage DC circuit breaker incorporates a resistor capacitor combination and a charging circuit connected to the main breaker, such that a commutating capacitor is discharged in opposition to the load current to force the current in an arc after breaker opening to zero to facilitate arc interruption. In a particular embodiment, a normally open commutating circuit is connected across the contacts of a main DC circuit breaker to absorb the inductive system energy trapped by breaker opening and to limit recovery voltages to a level tolerable by the commutating circuit components. 13 figs.

Metal vapor arc switch electromagnetic accelerator technology

NASA Technical Reports Server (NTRS)

Mongeau, P. P.

1984-01-01

A multielectrode device housed in an insulator vacuum vessel, the metal vapor vacuum switch has high power capability and can hold off voltages up to the 100 kilovolt level. Such switches can be electronically triggered and can interrupt or commutate at a zero current crossing. The physics of arc initiation, arc conduction, and interruption are examined, including material considerations; inefficiencies; arc modes; magnetic field effects; passive and forced extinction; and voltage recovery. Heating, electrode lifetime, device configuration, and external circuit configuration are discussed. The metal vapor vacuum switch is compared with SCRs, GTOs, spark gaps, ignitrons, and mechanical breakers.

Static inverter with synchronous output waveform synthesized by time-optimal-response feedback

NASA Technical Reports Server (NTRS)

Kernick, A.; Stechschulte, D. L.; Shireman, D. W.

1976-01-01

Time-optimal-response 'bang-bang' or 'bang-hang' technique, using four feedback control loops, synthesizes static-inverter sinusoidal output waveform by self-oscillatory but yet synchronous pulse-frequency-modulation (SPFM). A single modular power stage per phase of ac output entails the minimum of circuit complexity while providing by feedback synthesis individual phase voltage regulation, phase position control and inherent compensation simultaneously for line and load disturbances. Clipped sinewave performance is described under off-limit load or input voltage conditions. Also, approaches to high power levels, 3-phase arraying and parallel modular connection are given.

E-beam high voltage switching power supply

DOEpatents

Shimer, D.W.; Lange, A.C.

1996-10-15

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 figs.

E-beam high voltage switching power supply

DOEpatents

Shimer, Daniel W.; Lange, Arnold C.

1996-01-01

A high-power power supply produces a controllable, constant high voltage put under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

Linear frequency tuning in an LC-resonant system using a C-V response controllable MEMS varactor

NASA Astrophysics Data System (ADS)

Han, Chang-Hoon; Yoon, Yong-Hoon; Ko, Seung-Deok; Seo, Min-Ho; Yoon, Jun-Bo

2017-12-01

This paper proposes a device level solution to achieve linear frequency tuning with respect to a tuning voltage ( V tune ) sweep in an inductor ( L)-capacitor ( C) resonant system. Since the linearity of the resonant frequency vs. tuning voltage ( f- V) relationship in an LC-resonant system is closely related to the C- V response characteristic of the varactor, we propose a C- V response tunable varactor to realize the linear frequency tuning. The proposed varactor was fabricated using microelectromechanical system (MEMS) surface micromachining. The fabricated MEMS varactor has the ability to dynamically change the C- V response characteristic according to a curve control voltage ( V curve- control ). When V curve- control was increased from zero to 9 V, the C- V response curve was changed from a linear to a concave form (i.e., the capacitance decreased quickly in the low tuning voltage region and slowly in the high tuning voltage region). This change in the C- V response characteristic resulted in a change in the f- V relationship, and we successfully demonstrated almost perfectly linear frequency tuning in the LC-resonant system, with a linearity factor of 99.95%.

Status of high temperature superconductor cable and fault current limiter projects at American Superconductor

NASA Astrophysics Data System (ADS)

Maguire, J. F.; Yuan, J.

2009-10-01

This paper will describe the status of three key programs currently underway at American Superconductor Corp. The first program is the LIPA project which is a transmission voltage high temperature superconducting cable program, with funding support from the US Department of Energy. The 600 m cable, capable of carrying 574 MVA, was successfully installed and commissioned in LIPA grid on April 22, 2008. An overview of the project, system level design details and operational data will be provided. In addition, the status of the newly awarded LIPA II project will be described. The second program is Project Hydra, with funding support from the US Department of Homeland Security, to design, develop and demonstrate an HTS cable with fault current limiting functionality. The cable is 300 m long and is being designed to carry 96 MVA at a distribution level voltage of 13.8 kV. The cable will be permanently installed and energized in Manhattan, New York in 2010. The initial status of Project Hydra will be presented. The final program to be discussed is a transmission voltage, high temperature superconducting fault current limiter funded by the US DOE. The project encompasses the design, construction and test of a 115 kV FCL for power transmission within a time frame of 4-5 years. Installation and testing are planned for a Southern California Edison substation. A project overview and progress under the first phase will be reported.

30 CFR 18.53 - High-voltage longwall mining systems.

Code of Federal Regulations, 2012 CFR

2012-07-01

... and Design Requirements § 18.53 High-voltage longwall mining systems. (a) In each high-voltage motor...-interrupting devices must be designed and installed to prevent automatic reclosure. (d) Transformers with high... “open” position; (iv) When located in an explosion-proof enclosure, the device must be designed and...

30 CFR 18.53 - High-voltage longwall mining systems.

Code of Federal Regulations, 2010 CFR

2010-07-01

... and Design Requirements § 18.53 High-voltage longwall mining systems. (a) In each high-voltage motor...-interrupting devices must be designed and installed to prevent automatic reclosure. (d) Transformers with high... “open” position; (iv) When located in an explosion-proof enclosure, the device must be designed and...

30 CFR 18.53 - High-voltage longwall mining systems.

Code of Federal Regulations, 2014 CFR

2014-07-01

... and Design Requirements § 18.53 High-voltage longwall mining systems. (a) In each high-voltage motor...-interrupting devices must be designed and installed to prevent automatic reclosure. (d) Transformers with high... “open” position; (iv) When located in an explosion-proof enclosure, the device must be designed and...

30 CFR 18.53 - High-voltage longwall mining systems.

Code of Federal Regulations, 2013 CFR

2013-07-01

... and Design Requirements § 18.53 High-voltage longwall mining systems. (a) In each high-voltage motor...-interrupting devices must be designed and installed to prevent automatic reclosure. (d) Transformers with high... “open” position; (iv) When located in an explosion-proof enclosure, the device must be designed and...

30 CFR 18.53 - High-voltage longwall mining systems.

Code of Federal Regulations, 2011 CFR

2011-07-01

... and Design Requirements § 18.53 High-voltage longwall mining systems. (a) In each high-voltage motor...-interrupting devices must be designed and installed to prevent automatic reclosure. (d) Transformers with high... “open” position; (iv) When located in an explosion-proof enclosure, the device must be designed and...

Solid electrolyte: The key for high-voltage lithium batteries

DOE PAGES

Li, Juchuan; Ma, Cheng; Chi, Miaofang; ...

2014-10-14

A solid-state high-voltage (5 V) lithium battery is demonstrated to deliver a cycle life of 10 000 with 90% capacity retention. Furthermore, the solid electrolyte enables the use of high-voltage cathodes and Li anodes with minimum side reactions, leading to a high Coulombic efficiency of 99.98+%.

Architecture, Voltage, and Components for a Turboelectric Distributed Propulsion Electric Grid

NASA Technical Reports Server (NTRS)

Armstrong, Michael J.; Blackwelder, Mark; Bollman, Andrew; Ross, Christine; Campbell, Angela; Jones, Catherine; Norman, Patrick

2015-01-01

The development of a wholly superconducting turboelectric distributed propulsion system presents unique opportunities for the aerospace industry. However, this transition from normally conducting systems to superconducting systems significantly increases the equipment complexity necessary to manage the electrical power systems. Due to the low technology readiness level (TRL) nature of all components and systems, current Turboelectric Distributed Propulsion (TeDP) technology developments are driven by an ambiguous set of system-level electrical integration standards for an airborne microgrid system (Figure 1). While multiple decades' worth of advancements are still required for concept realization, current system-level studies are necessary to focus the technology development, target specific technological shortcomings, and enable accurate prediction of concept feasibility and viability. An understanding of the performance sensitivity to operating voltages and an early definition of advantageous voltage regulation standards for unconventional airborne microgrids will allow for more accurate targeting of technology development. Propulsive power-rated microgrid systems necessitate the introduction of new aircraft distribution system voltage standards. All protection, distribution, control, power conversion, generation, and cryocooling equipment are affected by voltage regulation standards. Information on the desired operating voltage and voltage regulation is required to determine nominal and maximum currents for sizing distribution and fault isolation equipment, developing machine topologies and machine controls, and the physical attributes of all component shielding and insulation. Voltage impacts many components and system performance.

Electrical characteristic fluctuation of 16-nm-gate high-κ/metal gate bulk FinFET devices in the presence of random interface traps

NASA Astrophysics Data System (ADS)

Hsu, Sheng-Chia; Li, Yiming

2014-11-01

In this work, we study the impact of random interface traps (RITs) at the interface of SiO x /Si on the electrical characteristic of 16-nm-gate high-κ/metal gate (HKMG) bulk fin-type field effect transistor (FinFET) devices. Under the same threshold voltage, the effects of RIT position and number on the degradation of electrical characteristics are clarified with respect to different levels of RIT density of state ( D it). The variability of the off-state current ( I off) and drain-induced barrier lowering (DIBL) will be severely affected by RITs with high D it varying from 5 × 1012 to 5 × 1013 eV-1 cm-2 owing to significant threshold voltage ( V th) fluctuation. The results of this study indicate that if the level of D it is lower than 1 × 1012 eV-1 cm-2, the normalized variability of the on-state current, I off, V th, DIBL, and subthreshold swing is within 5%.

Voltage Impacts of Utility-Scale Distributed Wind

DOE Office of Scientific and Technical Information (OSTI.GOV)

Allen, A.

2014-09-01

Although most utility-scale wind turbines in the United States are added at the transmission level in large wind power plants, distributed wind power offers an alternative that could increase the overall wind power penetration without the need for additional transmission. This report examines the distribution feeder-level voltage issues that can arise when adding utility-scale wind turbines to the distribution system. Four of the Pacific Northwest National Laboratory taxonomy feeders were examined in detail to study the voltage issues associated with adding wind turbines at different distances from the sub-station. General rules relating feeder resistance up to the point of turbinemore » interconnection to the expected maximum voltage change levels were developed. Additional analysis examined line and transformer overvoltage conditions.« less

Does voltage predict return to work and neuropsychiatric sequelae following electrical burn injury?

PubMed

Chudasama, Shruti; Goverman, Jeremy; Donaldson, Jeffrey H; van Aalst, John; Cairns, Bruce A; Hultman, Charles Scott

2010-05-01

Voltage has historically guided the acute management and long-term prognosis of physical morbidity in electrical injury patients; however, few large studies exist that include neuropsychiatric morbidity in final outcome analysis. This review compares high (>1000 V) to low (<1000 V) voltage injuries, focusing on return to work and neuropsychiatric sequelae following electrical burn injury. Patients with electrical injuries admitted to the University of North Carolina Jaycee Burn Center between 2000 and 2005 were prospectively entered into a trauma database, then retrospectively reviewed. Patients were divided into 4 cohorts: high voltage (>1000 V), low voltage (<1000 V), flash arc, and lightning. Demographics, hospital course, and follow-up were recorded to determine physical and neuropsychiatric morbidity. Differences among cohorts were tested for statistical significance. Over 5 years, 2548 patients were admitted to the burn center, including 115 patients with electrical injuries. There were 110 males and 5 females, with a mean age of 35 years (range, 0.75-65 years). The cause of the electrical injury was high voltage in 60 cases, low voltage in 25 cases, flash arc in 29 cases and lightning in 1 case. The mean total body surface area burn was 8% (range, 0%-52%). The etiology was work-related electrical injury in 85 patients. Mean follow-up period was 352 days with 13 (11%) patients lost to follow-up. Patients with high voltage injuries had significantly larger total body surface area burn, longer ICU stays, longer hospitalizations, and significantly higher rates of fasciotomy, amputation, nerve decompression and outpatient reconstruction, with 4 cases of renal failure and 2 deaths. In spite of these differences, high and low voltage groups experienced similar rates of neuropsychiatric sequelae, limited return to work and delays in return to work. Final impairment ratings for the high and low voltage groups were 17.5% and 5.3%, respectively. Electrical injuries often incur severe morbidity despite relatively small burn size and/or low voltage. When comparing high and low voltage injuries, similarities in endpoints such as neuropsychiatric sequelae, the need for late reconstruction, and failure to return to work challenge previous notions that voltage predicts outcome.

Novel high-frequency energy-efficient pulsed-dc generator for capacitively coupled plasma discharge

NASA Astrophysics Data System (ADS)

Mamun, Md Abdullah Al; Furuta, Hiroshi; Hatta, Akimitsu

2018-03-01

The circuit design, assembly, and operating tests of a high-frequency and high-voltage (HV) pulsed dc generator (PDG) for capacitively coupled plasma (CCP) discharge inside a vacuum chamber are reported. For capacitive loads, it is challenging to obtain sharp rectangular pulses with fast rising and falling edges, requiring intense current for quick charging and discharging. The requirement of intense current generally limits the pulse operation frequency. In this study, we present a new type of PDG consisting of a pair of half-resonant converters and a constant current-controller circuit connected with HV solid-state power switches that can deliver almost rectangular high voltage pulses with fast rising and falling edges for CCP discharge. A prototype of the PDG is assembled to modulate from a high-voltage direct current (HVdc) input into a pulsed HVdc output, while following an input pulse signal and a set current level. The pulse rise time and fall time are less than 500 ns and 800 ns, respectively, and the minimum pulse width is 1 µs. The maximum voltage for a negative pulse is 1000 V, and the maximum repetition frequency is 500 kHz. During the pulse on time, the plasma discharge current is controlled steadily at the set value. The half-resonant converters in the PDG perform recovery of the remaining energy from the capacitive load at every termination of pulse discharge. The PDG performed with a high energy efficiency of 85% from the HVdc input to the pulsed dc output at a repetition rate of 1 kHz and with stable plasma operation in various discharge conditions. The results suggest that the developed PDG can be considered to be more efficient for plasma processing by CCP.

Novel high-frequency energy-efficient pulsed-dc generator for capacitively coupled plasma discharge.

PubMed

Mamun, Md Abdullah Al; Furuta, Hiroshi; Hatta, Akimitsu

2018-03-01

The circuit design, assembly, and operating tests of a high-frequency and high-voltage (HV) pulsed dc generator (PDG) for capacitively coupled plasma (CCP) discharge inside a vacuum chamber are reported. For capacitive loads, it is challenging to obtain sharp rectangular pulses with fast rising and falling edges, requiring intense current for quick charging and discharging. The requirement of intense current generally limits the pulse operation frequency. In this study, we present a new type of PDG consisting of a pair of half-resonant converters and a constant current-controller circuit connected with HV solid-state power switches that can deliver almost rectangular high voltage pulses with fast rising and falling edges for CCP discharge. A prototype of the PDG is assembled to modulate from a high-voltage direct current (HVdc) input into a pulsed HVdc output, while following an input pulse signal and a set current level. The pulse rise time and fall time are less than 500 ns and 800 ns, respectively, and the minimum pulse width is 1 µs. The maximum voltage for a negative pulse is 1000 V, and the maximum repetition frequency is 500 kHz. During the pulse on time, the plasma discharge current is controlled steadily at the set value. The half-resonant converters in the PDG perform recovery of the remaining energy from the capacitive load at every termination of pulse discharge. The PDG performed with a high energy efficiency of 85% from the HVdc input to the pulsed dc output at a repetition rate of 1 kHz and with stable plasma operation in various discharge conditions. The results suggest that the developed PDG can be considered to be more efficient for plasma processing by CCP.

High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Sohn, Jung Inn; Cha, Seung Nam; Whang, Dongmok; Kim, Jong Min; Kang, Dae Joon

2014-05-21

We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.

Expression, purification, and reconstitution of the voltage-sensing domain from Ci-VSP.

PubMed

Li, Qufei; Jogini, Vishwanath; Wanderling, Sherry; Cortes, D Marien; Perozo, Eduardo

2012-10-16

The voltage-sensing domain (VSD) is the common scaffold responsible for the functional behavior of voltage-gated ion channels, voltage sensitive enzymes, and proton channels. Because of the position of the voltage dependence of the available VSD structures, at present, they all represent the activated state of the sensor. Yet in the absence of a consensus resting state structure, the mechanistic details of voltage sensing remain controversial. The voltage dependence of the VSD from Ci-VSP (Ci-VSD) is dramatically right shifted, so that at 0 mV it presumably populates the putative resting state. Appropriate biochemical methods are an essential prerequisite for generating sufficient amounts of Ci-VSD protein for high-resolution structural studies. Here, we present a simple and robust protocol for the expression of eukaryotic Ci-VSD in Escherichia coli at milligram levels. The protein is pure, homogeneous, monodisperse, and well-folded after solubilization in Anzergent 3-14 at the analyzed concentration (~0.3 mg/mL). Ci-VSD can be reconstituted into liposomes of various compositions, and initial site-directed spin labeling and electron paramagnetic resonance (EPR) spectroscopic measurements indicate its first transmembrane segment folds into an α-helix, in agreement with the homologous region of other VSDs. On the basis of our results and enhanced relaxation EPR spectroscopy measurement, Ci-VSD reconstitutes essentially randomly in proteoliposomes, precluding straightforward application of transmembrane voltages in combination with spectroscopic methods. Nevertheless, these results represent an initial step that makes the resting state of a VSD accessible to a variety of biophysical and structural approaches, including X-ray crystallography, spectroscopic methods, and electrophysiology in lipid bilayers.

Expression, Purification and Reconstitution of the Voltage Sensing Domain from Ci-VSP

PubMed Central

Li, Qufei; Jogini, Vishwanath; Wanderling, Sherry; Cortes, D. Marien; Perozo, Eduardo

2013-01-01

The voltage-sensing domain (VSD) is the common scaffold responsible for the functional behavior of voltage gated ion channels, voltage sensitive enzymes and proton channels. Because of the position of the voltage dependence of the available VSD structures, at present, they all represent the activated state of the sensor. Yet, in the absence of a consensus resting state structure, the mechanistic details of voltage sensing remain controversial. The voltage dependence of the VSD from Ci-VSP (Ci-VSD) is dramatically right shifted, so that at 0 mV It presumably populates the putative resting state. Appropriate biochemical methods are an essential prerequisite to generate sufficient amounts of Ci-VSD protein for high-resolution structural studies. Here, we present a simple and robust protocol for the Escherichia coli expression of eukaryotic Ci-VSD at milligram levels. The protein is pure, homogeneous, mono-disperse and well folded after solubilization in Anzergent 3-14 at the analyzed concentration (~ 0.3 mg/mL). Ci-VSD can be reconstituted into liposomes of various compositions and initial site-directed spin labeling and EPR spectroscopic measurements indicate its first transmembrane segment folds into an α-helix, in agreement to the homologous region of other VSDs. Based on current results and enhanced relaxation EPR spectroscopy measurement, Ci-VSD reconstitutes essentially randomly in proteo-liposomes, precluding straightforward application of transmembrane voltages in combination with spectroscopic methods. Nevertheless, the present results represent an initial step that makes the resting state of a VSD accessible to a variety of biophysical and structural approaches, including X-ray crystallography, spectroscopic methods and electrophysiology in lipid bilayers. PMID:22989304

Enhanced inverse spin Hall contribution at high microwave power levels in La{sub 0.67}Sr{sub 0.33}MnO{sub 3}/SrRuO{sub 3} epitaxial bilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haidar, S. M., E-mail: haidar@imr.tohoku.ac.jp; Lustikova, J.; Shiomi, Y.

2015-10-12

We have investigated microwave power dependence of dc voltage generated upon ferromagnetic resonance in a La{sub 0.67}Sr{sub 0.33}MnO{sub 3}/SrRuO{sub 3} epitaxial bilayer film at room temperature. With increasing microwave power above ∼75 mW, the magnitude of the voltage signal decreases as the sample temperature approaches the Curie temperature of La{sub 0.67}Sr{sub 0.33}MnO{sub 3} due to heating effects. By analyzing the dependence of the voltage signal on the direction of the magnetic field, we show that with increasing microwave power the contribution from the inverse spin Hall effect becomes more dominant than that from the anisotropic magnetoresistance effect.

Voltage Stress on Y Capacitors from Indirect Lightning Pulses According to ED-14/DO-160

NASA Astrophysics Data System (ADS)

Meier, F.

2012-05-01

Transients due to lightning strikes on an aircraft's fuselage impose stress on the input filters of elec- tronic equipment. Permanent damage can occur when exceeding the voltage handling capacity of filter components causing a short circuit to ground. In ED-14/DO-160, section 22, a number of waveforms and levels are defined which are used to check the airworthiness of avionics equipment. Depending on pro- cedure and level, Y-capacitors are stressed by transient voltages which exceed their dielectric strength. The design engineer's task is a properly select the type and voltage rating of capacitors. With moderate simplifications, a LCR-series network is justified to calculate the peak voltage dependent on the capacitance.

System for instrumenting and manipulating apparatuses in high voltage

DOEpatents

Jordan, Kevin

2016-06-07

A system for energizing, operating and manipulating apparatuses in high voltage systems. The system uses a dielectric gas such as SF.sub.6 as a driving power supply for a pneumatic motor which ultimately charges a battery or other energy storage device. The stored energy can then be used for instrumentation equipment, or to power any electrical equipment, in the high voltage deck. The accompanying method provides for the use of the SF6 system for operating an electrical device in a high-voltage environment.

Voltage regulation in distribution networks with distributed generation

NASA Astrophysics Data System (ADS)

Blažič, B.; Uljanić, B.; Papič, I.

2012-11-01

The paper deals with the topic of voltage regulation in distribution networks with relatively high distributed energy resources (DER) penetration. The problem of voltage rise is described and different options for voltage regulation are given. The influence of DER on voltage profile and the effectiveness of the investigated solutions are evaluated by means of simulation in DIgSILENT. The simulated network is an actual distribution network in Slovenia with a relatively high penetration of distributed generation. Recommendations for voltage control in networks with DER penetration are given at the end.

MATLAB/Simulink Pulse-Echo Ultrasound System Simulator Based on Experimentally Validated Models.

PubMed

Kim, Taehoon; Shin, Sangmin; Lee, Hyongmin; Lee, Hyunsook; Kim, Heewon; Shin, Eunhee; Kim, Suhwan

2016-02-01

A flexible clinical ultrasound system must operate with different transducers, which have characteristic impulse responses and widely varying impedances. The impulse response determines the shape of the high-voltage pulse that is transmitted and the specifications of the front-end electronics that receive the echo; the impedance determines the specification of the matching network through which the transducer is connected. System-level optimization of these subsystems requires accurate modeling of pulse-echo (two-way) response, which in turn demands a unified simulation of the ultrasonics and electronics. In this paper, this is realized by combining MATLAB/Simulink models of the high-voltage transmitter, the transmission interface, the acoustic subsystem which includes wave propagation and reflection, the receiving interface, and the front-end receiver. To demonstrate the effectiveness of our simulator, the models are experimentally validated by comparing the simulation results with the measured data from a commercial ultrasound system. This simulator could be used to quickly provide system-level feedback for an optimized tuning of electronic design parameters.

High-Voltage, Asymmetric-Waveform Generator

NASA Technical Reports Server (NTRS)

Beegle, Luther W.; Duong, Tuan A.; Duong, Vu A.; Kanik, Isik

2008-01-01

The shapes of waveforms generated by commercially available analytical separation devices, such as some types of mass spectrometers and differential mobility spectrometers are, in general, inadequate and result in resolution degradation in output spectra. A waveform generator was designed that would be able to circumvent these shortcomings. It is capable of generating an asymmetric waveform, having a peak amplitude as large as 2 kV and frequency of several megahertz, which can be applied to a capacitive load. In the original intended application, the capacitive load would consist of the drift plates in a differential-mobility spectrometer. The main advantage to be gained by developing the proposed generator is that the shape of the waveform is made nearly optimum for various analytical devices requiring asymmetric-waveform such as differential-mobility spectrometers. In addition, this waveform generator could easily be adjusted to modify the waveform in accordance with changed operational requirements for differential-mobility spectrometers. The capacitive nature of the load is an important consideration in the design of the proposed waveform generator. For example, the design provision for shaping the output waveform is based partly on the principle that (1) the potential (V) on a capacitor is given by V=q/C, where C is the capacitance and q is the charge stored in the capacitor; and, hence (2) the rate of increase or decrease of the potential is similarly proportional to the charging or discharging current. The proposed waveform generator would comprise four functional blocks: a sine-wave generator, a buffer, a voltage shifter, and a high-voltage switch (see Figure 1). The sine-wave generator would include a pair of operational amplifiers in a feedback configuration, the parameters of which would be chosen to obtain a sinusoidal timing signal of the desired frequency. The buffer would introduce a slight delay (approximately equal to 20 ns) but would otherwise leave the fundamental timing signal unchanged. The buffered timing signal would be fed as input to the level shifter. The output of the level shifter would serve as a timing and control signal for the high-voltage switch, causing the switch to alternately be (1) opened, allowing the capacitive load to be charged from a high-voltage DC power supply; then (2) closed to discharge the capacitive load to ground. Hence, the output waveform would closely approximate a series of exponential charging and discharging curves (see Figure 2).

In Situ X-ray Diffraction Studies on the Mechanism of Capacity Retention Improvement by Coating at the Surface of Li CoO2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chung,K.; Yoon, W.; McBreen, J.

2007-01-01

Synchrotron based in situ X-ray diffraction technique has been used to study the mechanism of capacity fading of LiCoO2 cycled to a higher voltage above the normal 4.2 V limit and to investigate the mechanism of capacity retention improvement by ZrO2 surface coating on LiCoO2. It was found that the capacity fading of LiCoO2 cycled at higher voltage limit is closely related to the increased polarization rather than the bulk crystal structure damage. The capacity of uncoated LiCoO2 sample dropped to less than 70 mAh g-1 when charged to 4.8 V after high voltage cycling. However, when the voltage limitmore » was further increased to 8.35 V, the capacity was partially restored and the corresponding structural changes were recovered to the similar level as seen in fresh sample. This indicates that the integrity of the bulk crystal structure of LiCoO2 was not seriously damaged during cycling to 4.8 V. The increased polarization seems to be responsible for the fading capacity and the uncompleted phase transformation of LiCoO2. The polarization-induced capacity fading can be significantly improved by ZrO2 surface coating. It was proposed that the effect of ZrO2-coating layer on the capacity retention during high voltage cycling is through the formation of protection layer on the surface of LiCoO2 particles, which can reduce the decomposition of the electrolyte at higher voltages.« less

Universal single point liquid level sensor

DOEpatents

Kronberg, J.W.

1992-10-27

A liquid level detector comprises a thermistor and circuitry for determining electrically if the thermistor is wet or dry and additionally, and continuously, if the thermistor is open or shorted. The voltage across the thermistor is filtered to remove low frequency electrical noise, then compared with a reference low voltage to determine if shorted and to a transition voltage chosen to be between the thermistor's normal wet and dry voltages to determine if the thermistor is wet or dry. The voltage is also compared to the supply voltage using a CMOS gate circuit element to determine if the thermistor is open. The gate passes both faults on to an LED to signal that a fault condition exists or indicates by another LED the wet or dry condition of the thermistor. A pump may be activated through a relay if the thermistor tests wet or dry, as desired. 1 figure.

Universal single point liquid level sensor

DOEpatents

Kronberg, James W.

1992-01-01

A liquid level detector comprises a thermistor and circuitry for determining electrically if the thermistor is wet or dry and additionally, and continuously, if the thermistor is open or shorted. The voltage across the thermistor is filtered to remove low frequency electrical noise, then compared with a reference low voltage to determine if shorted and to a transition voltage chosen to be between the thermistor's normal wet and dry voltages to determine if the thermistor is wet or dry. The voltage is also compared to the supply voltage using a CMOS gate circuit element to determine if the thermistor is open. The gate passes both faults on to an LED to signal that a fault condition exists or indicates by another LED the wet or dry condition of the thermistor. A pump may be activated through a relay if the thermistor tests wet or dry, as desired.

Atmospheric plasma generation for LCD panel cleaning

NASA Astrophysics Data System (ADS)

Kim, Gyu-Sik; Won, Chung-Yuen; Choi, Ju-Yeop; Yim, C. H.

2007-12-01

UV lamp systems have been used for cleaning of display panels of TFT LCD or Plasma Display Panel (PDP). However, the needs for high efficient cleaning and low cost made high voltage plasma cleaning techniques to be developed and to be improved. Dielectric-barrier discharges (DBDs), also referred to as barrier discharges or silent discharges have for a long time been exclusively related to ozone generation. In this paper, a 6kW high voltage plasma power supply system was developed for LCD cleaning. The -phase input voltage is rectified and then inverter system is used to make a high frequency pulse train, which is rectified after passing through a high-power transformer. Finally, bi-directional high voltage pulse switching circuits are used to generate the high voltage plasma. Some experimental results showed the usefulness of atmospheric plasma for LCD panel cleaning.

Miniature x-ray source

DOEpatents

Trebes, James E.; Stone, Gary F.; Bell, Perry M.; Robinson, Ronald B.; Chornenky, Victor I.

2002-01-01

A miniature x-ray source capable of producing broad spectrum x-ray emission over a wide range of x-ray energies. The miniature x-ray source comprises a compact vacuum tube assembly containing a cathode, an anode, a high voltage feedthru for delivering high voltage to the anode, a getter for maintaining high vacuum, a connection for an initial vacuum pump down and crimp-off, and a high voltage connection for attaching a compact high voltage cable to the high voltage feedthru. At least a portion of the vacuum tube wall is highly x-ray transparent and made, for example, from boron nitride. The compact size and potential for remote operation allows the x-ray source, for example, to be placed adjacent to a material sample undergoing analysis or in proximity to the region to be treated for medical applications.

High voltage systems (tube-type microwave)/low voltage system (solid-state microwave) power distribution

NASA Technical Reports Server (NTRS)

Nussberger, A. A.; Woodcock, G. R.

1980-01-01

SPS satellite power distribution systems are described. The reference Satellite Power System (SPS) concept utilizes high-voltage klystrons to convert the onboard satellite power from dc to RF for transmission to the ground receiving station. The solar array generates this required high voltage and the power is delivered to the klystrons through a power distribution subsystem. An array switching of solar cell submodules is used to maintain bus voltage regulation. Individual klystron dc voltage conversion is performed by centralized converters. The on-board data processing system performs the necessary switching of submodules to maintain voltage regulation. Electrical power output from the solar panels is fed via switch gears into feeder buses and then into main distribution buses to the antenna. Power also is distributed to batteries so that critical functions can be provided through solar eclipses.

Programmable high-output-impedance, large-voltage compliance, microstimulator for low-voltage biomedical applications.

PubMed

Farahmand, Sina; Maghami, Mohammad Hossein; Sodagar, Amir M

2012-01-01

This paper reports on the design of a programmable, high output impedance, large voltage compliance microstimulator for low-voltage biomedical applications. A 6-bit binary-weighted digital to analog converter (DAC) is used to generate biphasic stimulus current pulses. A compact current mirror with large output voltage compliance and high output resistance conveys the current pulses to the target tissue. Designed and simulated in a standard 0.18µm CMOS process, the microstimulator circuit is capable of delivering a maximum stimulation current of 160µA to a 10-kΩ resistive load. Operated at a 1.8-V supply voltage, the output stage exhibits a voltage compliance of 1.69V and output resistance of 160MΩ at full scale stimulus current. Layout of the core microelectrode circuit measures 25.5µm×31.5µm.

Understanding Voltage Decay in Lithium-Rich Manganese-Based Layered Cathode Materials by Limiting Cutoff Voltage.

PubMed

Yang, Jingsong; Xiao, Lifen; He, Wei; Fan, Jiangwei; Chen, Zhongxue; Ai, Xinping; Yang, Hanxi; Cao, Yuliang

2016-07-27

The effect of the cutoff voltages on the working voltage decay and cyclability of the lithium-rich manganese-based layered cathode (LRMO) was investigated by electrochemical measurements, electrochemical impedance spectroscopy, ex situ X-ray diffraction, transmission electron microscopy, and energy dispersive spectroscopy line scan technologies. It was found that both lower (2.0 V) and upper (4.8 V) cutoff voltages cause severe voltage decay with cycling due to formation of the spinel phase and migration of the transition metals inside the particles. Appropriate cutoff voltage between 2.8 and 4.4 V can effectively inhibit structural variation as the electrode demonstrates 92% capacity retention and indiscernible working voltage decay over 430 cycles. The results also show that phase transformation not only on high charge voltage but also on low discharge voltage should be addressed to obtain highly stable LRMO materials.

MOSFET-based high voltage short pulse generator for ultrasonic transducer excitation

NASA Astrophysics Data System (ADS)

Hidayat, Darmawan; Setianto, Syafei, Nendi Suhendi; Wibawa, Bambang Mukti

2018-02-01

This paper presents the generation of a high-voltage short pulse for the excitation of high frequency ultrasonic transducers. This is highly required in the purpose of various ultrasonic-based evaluations, particularly when high resolution measurement is necessary. A high voltage (+760 V) DC voltage source was pulsated by an ultrafast switching MOSFET which was driven by a pulse generator circuit consisting of an astable multivibrator, a one-shot multivibrator with Schmitt trigger input and a high current MOSFET driver. The generated pulses excited a 200-kHz and a 1-MHz ultrasonic transducers and tested in the transmission mode propagation to evaluate the performances of the generated pulse. The test results showed the generator were able to produce negative spike pulses up to -760 V voltage with the shortest time-width of 107.1 nanosecond. The transmission-received ultrasonic waves show frequency oscillation at 200 and 961 kHz and their amplitudes varied with the voltage of excitation pulse. These results conclude that the developed pulse generator is applicable to excite transducer for the generation of high frequency ultrasonic waves.

A compact 45 kV curve tracer with picoampere current measurement capability.

PubMed

Sullivan, W W; Mauch, D; Bullick, A; Hettler, C; Neuber, A; Dickens, J

2013-03-01

This paper discusses a compact high voltage curve tracer for high voltage semiconductor device characterization. The system sources up to 3 mA at up to 45 kV in dc conditions. It measures from 328 V to 60 kV with 15 V resolution and from 9.4 pA to 4 mA with 100 fA minimum resolution. Control software for the system is written in Microsoft Visual C# and features real-time measurement control and IV plotting, arc-protection and detection, an electrically isolated universal serial bus interface, and easy data exporting capabilities. The system has survived numerous catastrophic high voltage device-under-test arcing failures with no loss of measurement capability or system damage. Overall sweep times are typically under 2 min, and the curve tracer system was used to characterize the blocking performance of high voltage ceramic capacitors, high voltage silicon carbide photoconductive semiconductor switches, and high voltage coaxial cable.

Self-aligned photolithography for the fabrication of fully transparent high-voltage devices

NASA Astrophysics Data System (ADS)

Zhang, Yonghui; Mei, Zengxia; Huo, Wenxing; Wang, Tao; Liang, Huili; Du, Xiaolong

2018-05-01

High-voltage devices, working in the range of hundreds of volts, are indispensable elements in the driving or readout circuits for various kinds of displays, integrated microelectromechanical systems and x-ray imaging sensors. However, the device performances are found hardly uniform or repeatable due to the misalignment issue, which are extremely common for offset drain high-voltage devices. To resolve this issue, this article reports a set of self-aligned photolithography technology for the fabrication of high-voltage devices. High-performance fully-transparent high-voltage thin film transistors, diodes and logic inverters are successfully fabricated with this technology. Unlike other self-aligned routes, opaque masks are introduced on the backside of the transparent substrate to facilitate proximity exposure method. The photolithography process is simulated and analyzed with technology computer aided design simulation to explain the working principle of the proximity exposure method. The substrate thickness is found to be vital for the implementation of this technology based on both simulation and experimental results. The electrical performance of high-voltage devices is dependent on the offset length, which can be delicately modulated by changing the exposure dose. The presented self-aligned photolithography technology is proved to be feasible in high-voltage circuits, demonstrating its huge potential in practical industrial applications.

High voltage fragmentation of composites from secondary raw materials - Potential and limitations.

PubMed

Leißner, T; Hamann, D; Wuschke, L; Jäckel, H-G; Peuker, U A

2018-04-01

The comminution of composites for liberation of valuable components is a costly and energy-intensive process within the recycling of spent products. It therefore is continuously studied and optimized. In addition to conventional mechanical comminution innovative new principles for size reduction have been developed. One is the use of high voltage (HV) pulses, which is known to be a technology selectively liberating along phase boundaries. This technology offers the advantage of targeted liberation, preventing overgrinding of the material and thus improving the overall processing as well as product quality. In this study, the high voltage fragmentation of three different non-brittle composites (galvanized plastics, carbon fibre composites, electrode foils from Li-ion batteries) was investigated. The influence of pulse rate, number of pulses and filling level on the liberation and efficiency of comminution is discussed. Using the guideline VDI 2225 HV, fragmentation is compared to conventional mechanical comminution with respect to numerous criteria such as cost, throughput, energy consumption, availability and scalability. It was found that at current state of development, HV fragmentation cannot compete with mechanical comminution beyond laboratory scale. Copyright © 2017 Elsevier Ltd. All rights reserved.

How the charge-neutrality level of interface states controls energy level alignment in cathode contacts of organic bulk-heterojunction solar cells.

PubMed

Guerrero, Antonio; Marchesi, Luís F; Boix, Pablo P; Ruiz-Raga, Sonia; Ripolles-Sanchis, Teresa; Garcia-Belmonte, Germà; Bisquert, Juan

2012-04-24

Electronic equilibration at the metal-organic interface, leading to equalization of the Fermi levels, is a key process in organic optoelectronic devices. How the energy levels are set across the interface determines carrier extraction at the contact and also limits the achievable open-circuit voltage under illumination. Here, we report an extensive investigation of the cathode energy equilibration of organic bulk-heterojunction solar cells. We show that the potential to balance the mismatch between the cathode metal and the organic layer Fermi levels is divided into two contributions: spatially extended band bending in the organic bulk and voltage drop at the interface dipole layer caused by a net charge transfer. We scan the operation of the cathode under a varied set of conditions, using metals of different work functions in the range of ∼2 eV, different fullerene acceptors, and several cathode interlayers. The measurements allow us to locate the charge-neutrality level within the interface density of sates and calculate the corresponding dipole layer strength. The dipole layer withstands a large part of the total Fermi level mismatch when the polymer:fullerene blend ratio approaches ∼1:1, producing the practical alignment between the metal Fermi level and the charge-neutrality level. Origin of the interface states is linked with fullerene reduced molecules covering the metal contact. The dipole contribution, and consequently the band bending, is highly sensitive to the nature and amount of fullerene molecules forming the interface density of states. Our analysis provides a detailed picture of the evolution of the potentials in the bulk and the interface of the solar cell when forward voltage is applied or when photogeneration takes place.

Wide Bandgap Extrinsic Photoconductive Switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, James S.

2013-07-03

Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductivemore » switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.« less