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Sample records for high voltage modulator

  1. Potted High Voltage Modules For Space Application

    NASA Astrophysics Data System (ADS)

    Herty, Frank

    2011-10-01

    The European Space Mission GOCE, the Mercury mis- sion BepiColombo and the new High Efficiency Multistage Plasma (HEMP) thruster for the SGEO telecom mission have triggered the development of high voltage power supplies at Astrium Satellites covering different classes of output power (20W up to 1.4kW) and voltages (1kV up to 10kV). These supplies are equipped with encapsulated high voltage modules which have been designed as core functional blocks. The potting material - based on epoxy resin - was developed by Astrium Satellites. It is space-qualified for more than 30 years. Many types of high voltage modules have been manufactured since then, starting from transformer modules for the ERS mission to the modules used for electric propulsion. Technical trends, improvements and future goals of this technology are presented and discussed. New and re- fined processes are presented like the encapsulation of high-power toroidal transformers and the void-free electrical shielding by means of thin copper sheets which are laminated onto the surface of the potting material.

  2. High voltage photo switch package module

    SciTech Connect

    Sullivan, James S; Sanders, David M; Hawkins, Steven A; Sampayan, Stephen E

    2014-02-18

    A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces, and at least one light-input surface. First metallic layers are formed on the electrode-interface surfaces, and one or more optical waveguides having input and output ends are bonded to the substrate so that the output end of each waveguide is bonded to a corresponding one of the light-input surfaces of the photo-conductive substrate. This forms a waveguide-substrate interface for coupling light into the photo-conductive wafer. A dielectric material such as epoxy is then used to encapsulate the photo-conductive substrate and optical waveguide so that only the metallic layers and the input end of the optical waveguide are exposed. Second metallic layers are then formed on the first metallic layers so that the waveguide-substrate interface is positioned under the second metallic layers.

  3. Advanced Gate Drive for the SNS High Voltage Converter Modulator

    SciTech Connect

    Nguyen, M.N.; Burkhart, C.; Kemp, M.A.; Anderson, D.E.; /Oak Ridge

    2009-05-07

    SLAC National Accelerator Laboratory is developing a next generation H-bridge switch plate [1], a critical component of the SNS High Voltage Converter Modulator [2]. As part of that effort, a new IGBT gate driver has been developed. The drivers are an integral part of the switch plate, which are essential to ensuring fault-tolerant, high-performance operation of the modulator. The redesigned driver improves upon the existing gate drive in several ways. The new gate driver has improved fault detection and suppression capabilities; suppression of shoot-through and over-voltage conditions, monitoring of dI/dt and Vce(sat) for fast over-current detection and suppression, and redundant power isolation are some of the added features. In addition, triggering insertion delay is reduced by a factor of four compared to the existing driver. This paper details the design and performance of the new IGBT gate driver. A simplified schematic and description of the construction are included. The operation of the fast over-current detection circuits, active IGBT over-voltage protection circuit, shoot-through prevention circuitry, and control power isolation breakdown detection circuit are discussed.

  4. Methods for high-voltage bias testing of PV modules in hot and humid climate

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.; Pethe, Shirish A.; Kaul, Ashwani

    2011-09-01

    The accelerated tests currently carried out on PV modules reduce the infant mortality as well as improve the production techniques during the manufacture of PV modules. However, the accelerated tests do not completely duplicate the real world operating conditions of PV modules. Hence it is essential to deploy PV modules in the field for extended periods in order to estimate the degradation, if any, as well as to elucidate the degradation mechanisms. Moreover, PV modules should be tested by specially designed tests in harsh climates. At Florida Solar Energy Center (FSEC) high-voltage bias testing of PV modules was carried out in hot and humid climate with the individual modules biased at +/- 600 V. It was observed that the leakage currents flowing from the PV circuit to the ground is directly proportional to the bias voltage. PV systems with maximum voltage of 1000 V are installed in Europe and elsewhere which means higher leakage currents will be produced in the PV modules. Based on this fact and the earlier observations, high voltage bias testing of c-Si PV modules specially designed for high voltage operation was carried out in hot and humid climate with the individual modules biased at +/-1500 V at FSEC and higher. This paper provides results of high voltage bias testing of PV modules. The results indicate that the test can be considered as reliable metric in determination of the long term performance of PV modules.

  5. Low Voltage High Precision Spatial Light ModulatorsFinal Report

    SciTech Connect

    Papavasiliou, A P

    2005-02-09

    The goal of this project was to make LLNL a leader in Spatial Light Modulators (SLMs) by developing the technology that will be needed by the next generation of SLMs. We would use new lower voltage actuators and bond those actuators directly to controlling circuitry to break the fundamental limitations that constrain current SLM technology. This three-year project was underfunded in the first year and not funded in the second year. With the funding that was available, we produced actuators and designs for the controlling circuitry that would have been integrated in the second year. Spatial light modulators (SLMs) are arrays of tiny movable mirrors that modulate the wave-fronts of light. SLMs can correct aberrations in incoming light for adaptive optics or modulate light for beam control, optical communication and particle manipulation. MicroElectroMechanical Systems (MEMS) is a technology that utilizes the microfabrication tools developed by the semiconductor industry to fabricate a wide variety of tiny machines. The first generation of MEMS SLMs have improved the functionality of SLMs while drastically reducing per pixel cost making arrays on the order of 1000 pixels readily available. These MEMS SLMs however are limited by the nature of their designs to be very difficult to scale above 1000 pixels and have very limited positioning accuracy. By co-locating the MEMS mirrors with CMOS electronics, we will increase the scalability and positioning accuracy. To do this we will have to make substantial advances in SLM actuator design, and fabrication.

  6. Realization of a high voltage generator by series connection of floating modules.

    PubMed

    Antonini, P; Benato, A; Borsato, E; Carugno, G; Gobbo, R; Montecassiano, F; Pegoraro, M; Pesavento, G; Zago, M; Zotto, P

    2017-02-01

    A high voltage generator built by a series connection of 100 kV modules was produced. The series connection feasibility is ensured by the inherent floating character of each module which is wireless powered by high efficiency photovoltaic cells illuminated by a laser system. Each module is equipped with a control and monitoring board allowing excellent stabilization of the high voltage output. The performance of the system in terms of reliability, stability, and efficiency was evaluated. In particular using a three module setup, we achieved a maximum voltage of 234 kV with stability better than 0.1%.

  7. Integrated high-voltage modulator for plasma immersion ion implantation with an RF plasma

    NASA Astrophysics Data System (ADS)

    Rogozin, A. I.; Astrelin, V. T.; Richter, E.; Möller, W.

    2003-08-01

    The present investigation focuses on further development of the plasma based high-voltage modulator for plasma immersion ion implantation devices. The modulator produces high-voltage pulses using grid controlled extraction of electrons from the plasma, which is used for the ion implantation. The operation features of the modulator in connection with a radio-frequency plasma are described. The device is applied to nitrogen ion implantations of stainless steel. The results indicate considerable hardness improvement, which confirms the practical utility of the high-voltage modulator.

  8. Compact high voltage, high peak power, high frequency transformer for converter type modulator applications.

    PubMed

    Reghu, T; Mandloi, V; Shrivastava, Purushottam

    2016-04-01

    The design and development of a compact high voltage, high peak power, high frequency transformer for a converter type modulator of klystron amplifiers is presented. The transformer has been designed to operate at a frequency of 20 kHz and at a flux swing of ±0.6 T. Iron (Fe) based nanocrystalline material has been selected as a core for the construction of the transformer. The transformer employs a specially designed solid Teflon bobbin having 120 kV insulation for winding the high voltage secondary windings. The flux swing of the core has been experimentally found by plotting the hysteresis loop at actual operating conditions. Based on the design, a prototype transformer has been built which is per se a unique combination of high voltage, high frequency, and peak power specifications. The transformer was able to provide 58 kV (pk-pk) at the secondary with a peak power handling capability of 700 kVA. The transformation ratio was 1:17. The performance of the transformer is also presented and discussed.

  9. Compact high voltage, high peak power, high frequency transformer for converter type modulator applications

    NASA Astrophysics Data System (ADS)

    Reghu, T.; Mandloi, V.; Shrivastava, Purushottam

    2016-04-01

    The design and development of a compact high voltage, high peak power, high frequency transformer for a converter type modulator of klystron amplifiers is presented. The transformer has been designed to operate at a frequency of 20 kHz and at a flux swing of ±0.6 T. Iron (Fe) based nanocrystalline material has been selected as a core for the construction of the transformer. The transformer employs a specially designed solid Teflon bobbin having 120 kV insulation for winding the high voltage secondary windings. The flux swing of the core has been experimentally found by plotting the hysteresis loop at actual operating conditions. Based on the design, a prototype transformer has been built which is per se a unique combination of high voltage, high frequency, and peak power specifications. The transformer was able to provide 58 kV (pk-pk) at the secondary with a peak power handling capability of 700 kVA. The transformation ratio was 1:17. The performance of the transformer is also presented and discussed.

  10. Modulation Voltage of High T c DC Superconducting Quantum Interference Device with Damping Resistance

    NASA Astrophysics Data System (ADS)

    Enpuku, Keiji; Doi, Hideki; Tokita, Go; Maruo, Taku

    1994-05-01

    The effect of damping resistance on the voltage versus flux (V -Φ) relation of the high T c dc superconducting quantum interference device (SQUID) is studied experimentally. Dc SQUID using YBaCuO step-edge junction and damping resistance in parallel with SQUID inductance is fabricated. Measured values of modulation voltage in the V -Φ relation are compared with those of the conventional SQUID without damping resistance. It is shown that modulation voltage is much improved by using damping resistance. The obtained experimental results agree reasonably with theoretical predictions reported previously.

  11. Degradation of Photovoltaic Modules Under High Voltage Stress in the Field: Preprint

    SciTech Connect

    del Cueto, J. A.; Rummel, S. R.

    2010-08-01

    The degradation in performance for eight photovoltaic (PV) modules stressed at high voltage (HV) is presented. Four types of modules--tandem-junction and triple-junction amorphous thin-film silicon, plus crystalline and polycrystalline silicon modules--were tested, with a pair of each biased at opposite polarities. They were deployed outdoors between 2001 and 2009 with their respective HV leakage currents through the module encapsulation continuously monitored with a data acquisition system, along with air temperature and relative humidity. For the first 5 years, all modules were biased continuously at fixed 600 VDC, day and night. In the last 2 years, the modules were step-bias stressed cyclically up and down in voltage between 10 and 600 VDC, in steps of tens to hundreds of volts. This allowed characterization of leakage current versus voltage under a large range of temperature and moisture conditions, facilitating determination of leakage paths. An analysis of the degradation is presented, along with integrated leakage charge. In HV operation: the bulk silicon modules degraded either insignificantly or at rates of 0.1%/yr higher than modules not biased at HV; for the thin-film silicon modules, the added loss rates are insignificant for one type, or 0.2%/yr-0.6%/yr larger for the other type.

  12. Droop Compensation with soft Switching for High Voltage Converter Modulator (HVCM)

    SciTech Connect

    Bland, Michael; Scheinker, Alexander; Clare, Jon; Watson, Alan; Ji, Chao; Reass, William

    2012-06-04

    High Voltage Converter Modulators (HVCM) offer significant performance advantages over conventional modulator technologies for long pulse applications. One of the key advantages of HVCM technology is the ability to compensate for capacitor bank voltage droop. Achieving droop compensation without incurring significant additional switching loss has not been possible in existing designs. This paper presents an analysis of the 'Y-point' variant of the HVCM topology using the Combined Phase and Frequency Modulation (CPFM) technique. This, combined with the addition of a 'lossless' snubber circuit, enables droop compensation while achieving soft switching over the entire pulse duration. The rise time and overshoot of the output voltage pulse is optimized using an iterative extreme seeking algorithm. The optimization reduces the rise time from 100 {micro}s to 50 {micro}s with no overshoot. This will lead to an increase in overall accelerator efficiency.

  13. High Voltage, Fast-Switching Module for Active Control of Magnetic Fields and Edge Plasma Currents

    NASA Astrophysics Data System (ADS)

    Ziemba, Timothy; Miller, Kenneth; Prager, James; Slobodov, Ilia

    2016-10-01

    Fast, reliable, real-time control of plasma is critical to the success of magnetic fusion science. High voltage and current supplies are needed to mitigate instabilities in all experiments as well as disruption events in large scale tokamaks for steady-state operation. Silicon carbide (SiC) MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities; however, these devices are limited to 1.2-1.7 kV devices. As fusion enters the long-pulse and burning plasma eras, efficiency of power switching will be important. Eagle Harbor Technologies (EHT), Inc. developing a high voltage SiC MOSFET module that operates at 10 kV. This switch module utilizes EHT gate drive technology, which has demonstrated the ability to increase SiC MOSFET switching efficiency. The module will allow more rapid development of high voltage switching power supplies at lower cost necessary for the next generation of fast plasma feedback and control. EHT is partnering with the High Beta Tokamak group at Columbia to develop detailed high voltage module specifications, to ensure that the final product meets the needs of the fusion science community.

  14. Modulation of high-voltage activated Ca(2+) channels by membrane phosphatidylinositol 4,5-bisphosphate.

    PubMed

    Suh, Byung-Chang; Leal, Karina; Hille, Bertil

    2010-07-29

    Modulation of voltage-gated Ca(2+) channels controls activities of excitable cells. We show that high-voltage activated Ca(2+) channels are regulated by membrane phosphatidylinositol 4,5-bisphosphate (PIP(2)) with different sensitivities. Plasma membrane PIP(2) depletion by rapamycin-induced translocation of an inositol lipid 5-phosphatase or by a voltage-sensitive 5-phosphatase (VSP) suppresses Ca(V)1.2 and Ca(V)1.3 channel currents by approximately 35% and Ca(V)2.1 and Ca(V)2.2 currents by 29% and 55%, respectively. Other Ca(V) channels are less sensitive. Inhibition is not relieved by strong depolarizing prepulses. It changes the voltage dependence of channel gating little. Recovery of currents from inhibition needs intracellular hydrolysable ATP, presumably for PIP(2) resynthesis. When PIP(2) is increased by overexpressing PIP 5-kinase, activation and inactivation of Ca(V)2.2 current slow and voltage-dependent gating shifts to slightly higher voltages. Thus, endogenous membrane PIP(2) supports high-voltage activated L-, N-, and P/Q-type Ca(2+) channels, and stimuli that activate phospholipase C deplete PIP(2) and reduce those Ca(2+) channel currents.

  15. Modulation of High-Voltage Activated Ca2+ Channels by Membrane Phosphatidylinositol 4,5-Bisphosphate

    PubMed Central

    Suh, Byung-Chang; Leal, Karina; Hille, Bertil

    2010-01-01

    SUMMARY Modulation of voltage-gated Ca2+ channels controls activities of excitable cells. We show that high-voltage activated Ca2+ channels are regulated by membrane phosphatidylinositol 4,5-bisphosphate (PIP2) with different sensitivities. Plasma membrane PIP2 depletion by rapamycin-induced translocation of an inositol lipid 5-phosphatase or by a voltage-sensitive 5-phosphatase (VSP) suppresses CaV1.2 and CaV1.3 channel currents by ~35%, and CaV2.1 and CaV2.2 currents by 29 and 55%, respectively. Other CaV channels are less sensitive. Inhibition is not relieved by strong depolarizing prepulses. It changes the voltage dependence of channel gating little. Recovery of currents from inhibition needs intracellular hydrolysable ATP, presumably for PIP2 resynthesis. When PIP2 is increased by overexpressing PIP 5-kinase, activation and inactivation of CaV2.2 current slow and voltage-dependent gating shifts to slightly higher voltages. Thus, endogenous membrane PIP2 supports high-voltage activated L-, N-, and P/Q- type Ca2+ channels, and stimuli that activate phospholipase C deplete PIP2 and reduce those Ca2+ channel currents. PMID:20670831

  16. Zero Voltage Soft Switching Duty Cycle Pulse Modulated High Frequency Inverter-Fed

    NASA Astrophysics Data System (ADS)

    Ishitobi, Manabu; Matsushige, Takayuki; Nakaoka, Mutsuo; Bessyo, Daisuke; Omori, Hideki; Terai, Haruo

    The utility grid voltage of commercial AC power source in Japan and USA is 100V, but in other Asian and European countries, it is 220V. In recent years, in Japan 200V outputted single-phase three-wire system begins to be used for high power applications. In 100V utility AC power applications and systems, an active voltage clamped quasi-resonant inverter circuit topology sing IGBTs has been effectively used so far for the consumer microwave oven. In this paper, presented is a half bridge type voltage-clamped asymmetrical soft switching PWM high-frequency inverter type AC-DC converter using IGBTs which is designed for consumer magnetron drive used as the consumer microwave oven in 200V utility AC power system. The zero voltage soft switching inverter treated here can use the same power rated switching semiconductor devices and three-winding high frequency transformer as those of the active voltage clamped quasi-resonant inverter using the IGBTs that has already been used for 100V utility AC power source. The operating performances of the voltage source single ended push pull (SEPP) type soft switching PWM inverter are evaluated and discussed for 100V and 200V common use consumer microwave oven. The harmonic line current components in the utility AC power side of the AC-DC power converter with ZVS-PWM SEPP inverter are reduced and improved on the basis of sine wave like pulse frequency modulation and sine wave like pulse width modulation for the utility AC voltage source.

  17. Extremum seeking-based optimization of high voltage converter modulator rise-time

    SciTech Connect

    Scheinker, Alexander; Bland, Michael; Krstic, Miroslav; Audia, Jeff

    2013-02-01

    We digitally implement an extremum seeking (ES) algorithm, which optimizes the rise time of the output voltage of a high voltage converter modulator (HVCM) at the Los Alamos Neutron Science Center (LANSCE) HVCM test stand by iteratively, simultaneously tuning the first 8 switching edges of each of the three phase drive waveforms (24 variables total). We achieve a 50 μs rise time, which is reduction in half compared to the 100 μs achieved at the Spallation Neutron Source (SNS) at Oak Ridge National Laboratory. Considering that HVCMs typically operate with an output voltage of 100 kV, with a 60Hz repetition rate, the 50 μs rise time reduction will result in very significant energy savings. The ES algorithm will prove successful, despite the noisy measurements and cost calculations, confirming the theoretical results that the algorithm is not affected by noise whose frequency components are independent of the perturbing frequencies.

  18. A Fusing Switch for Fault Suppression in the SNS High Voltage Converter Modulators

    SciTech Connect

    Kemp, Mark A.; Burkhart, Craig; Nguyen, Minh N.; Anderson, David E.; /Oak Ridge

    2009-08-03

    The High Voltage Converter Modulators (HVCMs) at the Spallation Neutron Source (SNS) have operated in excess of a combined 250,000 hours. Performance and reliability improvements to the HVCM are ongoing to increase modulator availability as accelerator system demands increase. There is a relatively large amount of energy storage in the HVCMs, {approx}180 kJ. This energy has the potential to dump into unsuppressed faults, cause damage, and increase the time to repair. The 'fusing switch' concept involves isolation of this stored energy from the location of the most common faults. This paper introduces this concept and its application to the HVCMs.

  19. High-speed, Low Voltage, Miniature Electro-optic Modulators Based on Hybrid Photonic-Crystal/Polymer/Sol-Gel Technology

    DTIC Science & Technology

    2012-02-01

    code) 01/02/2012 FINAL 15/11/2008 - 15/11/2011 High-speed, Low Voltage, Miniature Electro - optic Modulators Based on Hybrid Photonic-Crystal/Polymer... optic modulator, silicon photonics, integrated optics, electro - optic polymer, avionics, optical communications, sol-gel, nanotechnology U U U UU 25...2011 Program Manager: Dr. Charles Y-C Lee High-speed, Low Voltage, Miniature Electro - optic Modulators Based on Hybrid Photonic-Crystal/Polymer/Sol

  20. A low-voltage high-speed terahertz spatial light modulator using active metamaterial

    NASA Astrophysics Data System (ADS)

    Rout, Saroj; Sonkusale, Sameer R.

    2016-11-01

    An all solid-state metamaterial based terahertz (THz) spatial light modulator (SLM) is presented which uses high mobility 2DEG to manipulate the metamaterial resonant frequency (0.45 THz) leading to terahertz wave modulation. The 2DEG is created by embedding pseudomorphic high-electron mobility transistors in the capacitive gap of each electrical-LC resonator, allowing the charge density to be controlled with very low voltage (1 V) and modulating speeds up to 10 MHz while consuming sub-milliwatt power. We have demonstrated our SLM as a 2 × 2 pixel array operating around 0.45 THz by raster scanning a 6 × 6 image of an occluded metal object behind a thick polystyrene screen using a single-pixel THz imaging setup.

  1. APPARATUS FOR REGULATING HIGH VOLTAGE

    DOEpatents

    Morrison, K.G.

    1951-03-20

    This patent describes a high-voltage regulator of the r-f type wherein the modulation of the r-f voltage is accomplished at a high level, resulting in good stabilization over a large range of load conditions.

  2. Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

    NASA Technical Reports Server (NTRS)

    Adell, Philippe C.; Mojarradi, Mohammad; DelCastillo, Linda Y.; Vo, Tuan A.

    2011-01-01

    A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

  3. Threshold-voltage modulated phase change heterojunction for application of high density memory

    SciTech Connect

    Yan, Baihan; Tong, Hao Qian, Hang; Miao, Xiangshui

    2015-09-28

    Phase change random access memory is one of the most important candidates for the next generation non-volatile memory technology. However, the ability to reduce its memory size is compromised by the fundamental limitations inherent in the CMOS technology. While 0T1R configuration without any additional access transistor shows great advantages in improving the storage density, the leakage current and small operation window limit its application in large-scale arrays. In this work, phase change heterojunction based on GeTe and n-Si is fabricated to address those problems. The relationship between threshold voltage and doping concentration is investigated, and energy band diagrams and X-ray photoelectron spectroscopy measurements are provided to explain the results. The threshold voltage is modulated to provide a large operational window based on this relationship. The switching performance of the heterojunction is also tested, showing a good reverse characteristic, which could effectively decrease the leakage current. Furthermore, a reliable read-write-erase function is achieved during the tests. Phase change heterojunction is proposed for high-density memory, showing some notable advantages, such as modulated threshold voltage, large operational window, and low leakage current.

  4. Next Generation IGBT Switch Plate Development for the SNS High Voltage Converter Modulator

    SciTech Connect

    Kemp, Mark A.; Burkhart, Craig; Nguyen, Minh N.; Anderson, David E.; /Oak Ridge

    2008-09-18

    The RF source High Voltage Converter Modulator (HVCM) systems installed on the Spallation Neutron Source (SNS) have operated well in excess of 200,000 hours, during which time numerous failures have occurred. An improved Insulated Gate Bipolar Transistor (IGBT) switch plate is under development to help mitigate these failures. The new design incorporates two significant improvements. The IGBTs are upgraded to 4500 V, 1200 A, press-pack devices, which increase the voltage margin, facilitate better cooling, and eliminate explosive disassembly of the package in the event of device failure. The upgrade to an advanced IGBT gate drive circuit decreases switching losses and improves fault-condition response. The upgrade design and development status will be presented.

  5. New controller for high voltage converter modulator at spallation neutron source

    SciTech Connect

    Wezensky, Mark W; Brown, David L; Lee, Sung-Woo; Zhukov, Alexander P; Geng, Xiaosong

    2017-01-01

    The Spallation Neutron Source (SNS) has developed a new control system for the High Voltage Convertor Modulator (HVCM) at the SNS to replace the original control system which is approaching obsolescence. The original system was based on controllers for similar high voltage systems that were already in use [1]. The new controller, based on National Instruments PXI/FlexRIO Field Programmable Gate Array (FPGA) platform, offers enhancements such as modular construction, flexibility and non-proprietary software. The new controller also provides new capabilities like various methods for modulator pulse flattening, waveform capture, and first fault detection. This paper will discuss the design of the system, including the human machine interface, based on lessons learned at the SNS and other projects. It will also discuss performance and other issues related to its operation in an accelerator facility which requires high availability. To date, 73% of the operational HVCMs have been upgraded to with the new controller, and the remainder are scheduled for completion by mid-2017.

  6. All-polymer modulator for high frequency low drive voltage applications

    NASA Astrophysics Data System (ADS)

    Eng, David L. K.; Kozacik, Stephen; Olbricht, Benjamin C.; Shi, Shouyuan; Prather, Dennis W.

    2013-03-01

    As EO phase modulators become more prevalent components in optical and RF applications, the demand increases for high bandwidth and low drive voltage modulators that can easily be integrated into developing photonic technologies. The proposed paper will discuss a device architecture for a phase modulator based on a recently developed organic EO material (OEOM), IKD-1-50 integrated into a PMMA polymer host, using a low-index, photo-curable resin as the cladding layers all on a Si platform. Designs for a TM waveguide and electrode configuration will be presented from theory and modeling, through fabrication to characterization. The EO material serving as the core of the waveguide is poled using a poling stage and monitoring apparatus with same electrodes designed for modulation. Poling procedures have been optimized for this material based on experimentation in simple slab-capacitor characterization devices, and produce in-device r33 values that are comparable with attenuated total internal reflection measurements. The challenges presented by the instability of OEOMs in common processing conditions have been addressed and a very simple fabrication process has been developed using standard photolithography and reactive ion etching to define an inverted ridge waveguide structure, pattern surrounding electrodes, and prepare usable end facets. Phase modulator characterization results for fabricated and poled devices have been quantified and will be presented. The simplicity of this device architecture on a Si handle allows for integration into various photonic applications.

  7. Modulated voltage metastable ionization detector

    NASA Technical Reports Server (NTRS)

    Carle, G. C.; Kojiro, D. R.; Humphrey, D. E. (Inventor)

    1985-01-01

    The output current from a metastable ionization detector (MID) is applied to a modulation voltage circuit. An adjustment is made to balance out the background current, and an output current, above background, is applied to an input of a strip chart recorder. For low level concentrations, i.e., low detected output current, the ionization potential will be at a maximum and the metastable ionization detector will operate at its most sensitive level. When the detected current from the metastable ionization detector increases above a predetermined threshold level, a voltage control circuit is activated which turns on a high voltage transistor which acts to reduce the ionization potential. The ionization potential applied to the metastable ionization detector is then varied so as to maintain the detected signal level constant. The variation in ionization potential is now related to the concentration of the constituent and a representative amplitude is applied to another input of said strip chart recorder.

  8. Extremum seeking-based optimization of high voltage converter modulator rise-time

    DOE PAGES

    Scheinker, Alexander; Bland, Michael; Krstic, Miroslav; ...

    2013-02-01

    We digitally implement an extremum seeking (ES) algorithm, which optimizes the rise time of the output voltage of a high voltage converter modulator (HVCM) at the Los Alamos Neutron Science Center (LANSCE) HVCM test stand by iteratively, simultaneously tuning the first 8 switching edges of each of the three phase drive waveforms (24 variables total). We achieve a 50 μs rise time, which is reduction in half compared to the 100 μs achieved at the Spallation Neutron Source (SNS) at Oak Ridge National Laboratory. Considering that HVCMs typically operate with an output voltage of 100 kV, with a 60Hz repetitionmore » rate, the 50 μs rise time reduction will result in very significant energy savings. The ES algorithm will prove successful, despite the noisy measurements and cost calculations, confirming the theoretical results that the algorithm is not affected by noise whose frequency components are independent of the perturbing frequencies.« less

  9. Redesign of the H-Bridge Switch Plate of the SNS High Voltage Converter Modulator

    SciTech Connect

    Kemp, M.A.; Burkhart, C.; Nguyen, M.N.; Anderson, D.E.; /Oak Ridge

    2009-05-07

    The 1-MW High Voltage Converter Modulators [1] have operated in excess of 250,000 hours at the Spallation Neutron Source. Increased demands on the accelerator performance require increased modulator reliability. An effort is underway at SLAC National Accelerator Laboratory to redesign the modulator H-bridge switch plate with the goals of increasing reliability and performance [2]. The major difference between the SLAC design and the existing design is the use of press-pack IGBTs. Compared to other packaging options, these IGBTs have been shown to have increased performance in pulsed-power applications, have increased cooling capability, and do not fragment and disassemble during a fault event. An overview of the SLAC switch plate redesign is presented. Design steps including electrical modeling of the modulator and H-bridge, development of an integrated IGBT clamping mechanism, and fault tests are discussed. Experimental results will be presented comparing electrical performance of the SLAC switch plate to the existing switchplate under normal and fault conditions.

  10. Robustness of Self-Isolation High-Voltage Integrated Circuits against the Voltage Surge during Conductivity Modulation Delay in Free-Wheeling Diode

    NASA Astrophysics Data System (ADS)

    Yamazaki, Tomoyuki; Kumagai, Naoki; Nishiura, Akira; Fujihira, Tatsuhiko; Matsumoto, Takashi

    2007-02-01

    In this paper, we report on the robustness of self-isolation high-voltage integrated circuits (HVICs) against a voltage surge during a conductivity modulation delay in a free-wheeling diode (FWD) for the first time. Two types of voltage surge that have a negative voltage against the ground potential are applied to HVICs simultaneously in the conventional switching mode. The voltage surge activates parasitic bipolar transistors that may destroy the HVICs. In this study, the operation of parasitic bipolar transistors induced by the surge and the suppression of the action of these transistors were investigated, and the robustness of the self-isolation 1200 V HVICs against surge was verified experimentally.

  11. High voltage power supply

    NASA Astrophysics Data System (ADS)

    Ruitberg, A. P.; Young, K. M.

    1985-05-01

    A high voltage power supply is formed by three discrete circuits energized by a battery to provide a plurality of concurrent output signals floating at a high output voltage on the order of several tens of kilovolts. In the first two circuits, the regulator stages are pulse width modulated and include adjustable ressistances for varying the duty cycles of pulse trains provided to corresponding oscillator stages while the third regulator stage includes an adjustable resistance for varying the amplitude of a steady signal provided to a third oscillator stage. In the first circuit, the oscillator, formed by a constant current drive network and a tuned resonant network included a step up transformer, is coupled to a second step up transformer which, in turn, supplies an amplified sinusoidal signal to a parallel pair of complementary poled rectifying, voltage multiplier stages to generate the high output voltage.

  12. High voltage power supply

    NASA Technical Reports Server (NTRS)

    Ruitberg, A. P.; Young, K. M. (Inventor)

    1985-01-01

    A high voltage power supply is formed by three discrete circuits energized by a battery to provide a plurality of concurrent output signals floating at a high output voltage on the order of several tens of kilovolts. In the first two circuits, the regulator stages are pulse width modulated and include adjustable ressistances for varying the duty cycles of pulse trains provided to corresponding oscillator stages while the third regulator stage includes an adjustable resistance for varying the amplitude of a steady signal provided to a third oscillator stage. In the first circuit, the oscillator, formed by a constant current drive network and a tuned resonant network included a step up transformer, is coupled to a second step up transformer which, in turn, supplies an amplified sinusoidal signal to a parallel pair of complementary poled rectifying, voltage multiplier stages to generate the high output voltage.

  13. High voltage DC power supply

    DOEpatents

    Droege, T.F.

    1989-12-19

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively. 7 figs.

  14. High voltage DC power supply

    DOEpatents

    Droege, Thomas F.

    1989-01-01

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively.

  15. Low Voltage Spatial Light Modulator

    SciTech Connect

    Papavasiliou, A

    2003-02-19

    This project studied the feasibility of a Low-Voltage actuator technology that promises to reduce the switched voltage requirements and linearize the response of spatial light modulators. We created computer models that demonstrate substantial advantages offered by this technology, and fabricated and tested those devices. SLMs are electro-optic devices for modulating the phase, amplitude or angle of light beams, laser or other. Applications for arrays of SLMs include turbulence correction for high-speed optical communications, imaging through distorting media, input devices for holographic memories, optical manipulation of DNA molecules, and optical computers. Devices based on micro electro-mechanical systems (MEMS) technology have recently become of special interest because of their potential for greatly improved performance at a much lower cost than piezoelectric or liquid crystal based devices. The new MEMS-based SLM devices could have important applications in high-speed optical communication and remote optical sensing, in support of DoD and DOE missions. Virtually all previously demonstrated MEMS SLMs are based on parallel-plate capacitors where an applied voltage causes a mirror attached to a suspended electrode to move towards a fixed electrode. They require relatively high voltages, typically on the order of 100 V, resulting in (1) large transistor sizes, available only from specialized foundries at significant cost and limiting the amount/sophistication of electronics under each SLM pixel, and (2) large power dissipation/area, resulting in a heat removal issue because of the optical precision required ({approx} 1/50-th of a wavelength). The actuator described in this process uses an advanced geometry that was invented at LLNL and is currently still proprietary. The new geometry allows the application of a bias voltage. This applied bias voltage results in a reduction of the required switched voltage and a linearization of the response curve. When this

  16. Design and Development of High Voltage Direct Current (DC) Sources for the Solar Array Module Plasma Interaction Experiment

    NASA Technical Reports Server (NTRS)

    Bibyk, Irene K.; Wald, Lawrence W.

    1995-01-01

    Two programmable, high voltage DC power supplies were developed as part of the flight electronics for the Solar Array Module Plasma Interaction Experiment (SAMPIE). SAMPIE's primary objectives were to study and characterize the high voltage arcing and parasitic current losses of various solar cells and metal samples within the space plasma of low earth orbit (LEO). High voltage arcing can cause large discontinuous changes in spacecraft potential which lead to damage of the power system materials and significant Electromagnetic Interference (EMI). Parasitic currents cause a change in floating potential which lead to reduced power efficiency. These primary SAMPIE objectives were accomplished by applying artificial biases across test samples over a voltage range from -600 VDC to +300 VDC. This paper chronicles the design, final development, and test of the two programmable high voltage sources for SAMPIE. The technical challenges to the design for these power supplies included vacuum, space plasma effects, thermal protection, Shuttle vibrations and accelerations.

  17. Adaptive Modulation for DFIG and STATCOM With High-Voltage Direct Current Transmission.

    PubMed

    Tang, Yufei; He, Haibo; Ni, Zhen; Wen, Jinyu; Huang, Tingwen

    2016-08-01

    This paper develops an adaptive modulation approach for power system control based on the approximate/adaptive dynamic programming method, namely, the goal representation heuristic dynamic programming (GrHDP). In particular, we focus on the fault recovery problem of a doubly fed induction generator (DFIG)-based wind farm and a static synchronous compensator (STATCOM) with high-voltage direct current (HVDC) transmission. In this design, the online GrHDP-based controller provides three adaptive supplementary control signals to the DFIG controller, STATCOM controller, and HVDC rectifier controller, respectively. The mechanism is to observe the system states and their derivatives and then provides supplementary control to the plant according to the utility function. With the GrHDP design, the controller can adaptively develop an internal goal representation signal according to the observed power system states, therefore, to achieve more effective learning and modulating. Our control approach is validated on a wind power integrated benchmark system with two areas connected by HVDC transmission lines. Compared with the classical direct HDP and proportional integral control, our GrHDP approach demonstrates the improved transient stability under system faults. Moreover, experiments under different system operating conditions with signal transmission delays are also carried out to further verify the effectiveness and robustness of the proposed approach.

  18. Low voltage and high resolution phase modulator based on blue phase liquid crystals with external compact optical system.

    PubMed

    Yan, Jing; Xing, Yufei; Guo, Zhengbo; Li, Qing

    2015-06-15

    Liquid crystal phase modulators are emerging as a new technological advancement, since they can be used for a wide range of applications. To improve their performance, polymer stabilized blue phase liquid crystal (PS-BPLC) phase modulators with fast response time and accurate phase profile become a necessary. Here, we proposed a facile PS-BPLC phase modulator to achieve particularly low voltage and high resolution. By employing a specific external compact optical system setup, the driving voltage is reduced to 26.09V to obtain 2π phase change at the wavelength of 532 nm. An accurate numerical modeling is also conducted to provide a systematic investigation of the fringing electric field effect to the performance of high resolution PS-BPLC phase modulator. The wavefront distortion caused by the fringing electric field can be automatically compensated to generate accurate phase profile for fast response liquid crystal phase modulator. This work provides a new protocol to realize liquid crystal on silicon based fast response and high resolution phase modulator.

  19. The theory and implementation of a high quality pulse width modulated waveform synthesiser applicable to voltage FED inverters

    NASA Astrophysics Data System (ADS)

    Lower, Kim Nigel

    1985-03-01

    Modulation processes associated with the digital implementation of pulse width modulation (PWM) switching strategies were examined. A software package based on a portable turnkey structure is presented. Waveform synthesizer implementation techniques are reviewed. A three phase PWM waveform synthesizer for voltage fed inverters was realized. It is based on a constant carrier frequency of 18 kHz and a regular sample, single edge, asynchronous PWM switching scheme. With high carrier frequencies, it is possible to utilize simple switching strategies and as a consequence, many advantages are highlighted, emphasizing the importance to industrial and office markets.

  20. High Voltage Distribution

    NASA Astrophysics Data System (ADS)

    Norbeck, Edwin; Miller, Michael; Onel, Yasar

    2010-11-01

    For detector arrays that require 5 to 10 kV at a few microamps each for hundreds of detectors, using hundreds of HV power supplies is unreasonable. Bundles of hundreds of HV cables take up space that should be filled with detectors. A typical HV module can supply 1 ma, enough current for hundreds of detectors. It is better to use a single HV module and distribute the current as needed. We show a circuit that, for each detector, measures the current, cuts off the voltage if the current exceeds a set maximum, and allows the HV to be turned on or off from a control computer. The entire array requires a single HV cable and 2 or 3 control lines. This design provides the same voltage to all of the detectors, the voltage set by the single HV module. Some additional circuitry would allow a computer controlled voltage drop between the HV and each individual detector.

  1. Adenosine A1 receptors modulate high voltage-activated Ca2+ currents and motor pattern generation in the Xenopus embryo

    PubMed Central

    Brown, Paul; Dale, Nicholas

    2000-01-01

    Adenosine causes voltage- and non-voltage-dependent inhibition of high voltage-activated (HVA) Ca2+ currents in Xenopus laevis embryo spinal neurons. As this inhibition can be blocked by 8-cyclopentyl-1,3-dipropylxanthine (DPCPX) and mimicked by N6-cyclopentyladenosine (CPA) it appears to be mediated by A1 receptors. Agents active at A2 receptors either were without effect or could be blocked by DPCPX. AMP had no agonist action on these receptors. By using ω-conotoxin GVIA we found that adenosine inhibited an N-type Ca2+ current as well as a further unidentified HVA current that was insensitive to dihydropyridines, ω-agatoxin TK and ω-conotoxin MVIIC. Both types of current were subject to voltage- and non-voltage-dependent inhibition. We used CPA and DPCPX to test whether A1 receptors regulated spinal motor pattern generation in spinalized Xenopus embryos. DPCPX caused a near doubling of, while CPA greatly shortened, the length of swimming episodes. In addition, DPCPX slowed, while CPA greatly speeded up, the rate of run-down of motor activity. Our results demonstrate a novel action of A1 receptors in modulating spinal motor activity. Furthermore they confirm that adenosine is produced continually throughout swimming episodes and acts to cause the eventual termination of activity. PMID:10856119

  2. High Voltage SPT Performance

    NASA Technical Reports Server (NTRS)

    Manzella, David; Jacobson, David; Jankovsky, Robert

    2001-01-01

    A 2.3 kW stationary plasma thruster designed to operate at high voltage was tested at discharge voltages between 300 and 1250 V. Discharge specific impulses between 1600 and 3700 sec were demonstrated with thrust between 40 and 145 mN. Test data indicated that discharge voltage can be optimized for maximum discharge efficiency. The optimum discharge voltage was between 500 and 700 V for the various anode mass flow rates considered. The effect of operating voltage on optimal magnet field strength was investigated. The effect of cathode flow rate on thruster efficiency was considered for an 800 V discharge.

  3. Wide-range voltage modulation

    SciTech Connect

    Rust, K.R.; Wilson, J.M.

    1992-06-01

    The Superconducting Super Collider`s Medium Energy Booster Abort (MEBA) kicker modulator will supply a current pulse to the abort magnets which deflect the proton beam from the MEB ring into a designated beam stop. The abort kicker will be used extensively during testing of the Low Energy Booster (LEB) and the MEB rings. When the Collider is in full operation, the MEBA kicker modulator will abort the MEB beam in the event of a malfunction during the filling process. The modulator must generate a 14-{mu}s wide pulse with a rise time of less than 1 {mu}s, including the delay and jitter times. It must also be able to deliver a current pulse to the magnet proportional to the beam energy at any time during ramp-up of the accelerator. Tracking the beam energy, which increases from 12 GeV at injection to 200 GeV at extraction, requires the modulator to operate over a wide range of voltages (4 kV to 80 kV). A vacuum spark gap and a thyratron have been chosen for test and evaluation as candidate switches for the abort modulator. Modulator design, switching time delay, jitter and pre-fire data are presented.

  4. Testing Single Phase IGBT H-Bridge Switch Plates for the High Voltage Converter Modulator at the Spallation Neutron Source

    SciTech Connect

    Peplov, Vladimir V; Anderson, David E; Solley, Dennis J

    2014-01-01

    Three IGBT H-bridge switching networks are used in each High Voltage Converter Modulator (HVCM) system at the Spallation Neutron Source (SNS) to generate drive currents to three boost transformer primaries switching between positive and negative bus voltages at 20 kHz. Every switch plate assembly is tested before installing it into an operational HVCM. A Single Phase Test Stand has been built for this purpose, and it is used for adjustment, measurement and testing of different configurations of switch plates. This paper will present a description of the Test Stand configuration and discuss the results of testing switch plates with two different types of IGBT gate drivers currently in use on the HVCM systems. Comparison of timing characteristics of the original and new drivers and the resulting performance reinforces the necessity to replace the original H-bridge network drivers with the upgraded units.

  5. Fabrication of High-Voltage Bridge Rectifier Modules for Pulse Power Applications

    DTIC Science & Technology

    2014-09-01

    200 W/m⋅K A photograph of the completed V2 module is shown in Fig. 3. The DBC substrate was soldered directly to an electroless nickel immersion...responsible for photo- patterning, copper etching, and electroless nickel immersion gold (ENIG) plating on a Curamik Electronics DBC substrate material...nitride COTS commercial off-the-shelf CTE coefficient of thermal expansion DBC direct bonded copper ENIG electroless nickel immersion gold H.V. high

  6. High-voltage distributors

    NASA Technical Reports Server (NTRS)

    Mcchesney, J. F., Jr.

    1974-01-01

    Two distributors reduce high-voltage breakdowns and corona discharges. Both distributors are constructed to prevent air traps and facilitate servicing without soldering. Occurrence of coronas is also minimized due to smooth surfaces of device.

  7. High-Voltage Pulse Voltage Generator,

    DTIC Science & Technology

    1979-12-21

    the invention: I. I. Kalyatskiy, V. I. Kurets, and V. I. Safronov Well-known are pulse voltage generators which employ the Arkad’yev- Marx principle of...P2, and hereafter the device operates like an ordinary GIN [pulse volt- age generator] according to the Arkad’yev- Marx principle. The Object of the...Invention The high-voltage pulse voltage generator, assembled according to the Arkad’yev- Marx arrangement, each stage of which incorporates reactive

  8. High voltage coaxial switch

    DOEpatents

    Rink, John P.

    1983-07-19

    A coaxial high voltage, high current switch having a solid cylindrical cold cathode coaxially surrounded by a thin hollow cylindrical inner electrode and a larger hollow cylindrical outer electrode. A high voltage trigger between the cathode and the inner electrode causes electrons to be emitted from the cathode and flow to the inner electrode preferably through a vacuum. Some of the electrons penetrate the inner electrode and cause a volumetric discharge in the gas (which may be merely air) between the inner and outer electrodes. The discharge provides a low impedance path between a high voltage charge placed on the outer electrode and a load (which may be a high power laser) coupled to the inner electrode. For high repetition rate the gas between the inner and outer electrodes may be continuously exchanged or refreshed under pressure.

  9. High voltage coaxial switch

    DOEpatents

    Rink, J.P.

    1983-07-19

    A coaxial high voltage, high current switch having a solid cylindrical cold cathode coaxially surrounded by a thin hollow cylindrical inner electrode and a larger hollow cylindrical outer electrode. A high voltage trigger between the cathode and the inner electrode causes electrons to be emitted from the cathode and flow to the inner electrode preferably through a vacuum. Some of the electrons penetrate the inner electrode and cause a volumetric discharge in the gas (which may be merely air) between the inner and outer electrodes. The discharge provides a low impedance path between a high voltage charge placed on the outer electrode and a load (which may be a high power laser) coupled to the inner electrode. For high repetition rate the gas between the inner and outer electrodes may be continuously exchanged or refreshed under pressure. 3 figs.

  10. D2 dopamine receptors modulate neuronal resonance in subthalamic nucleus and cortical high-voltage spindles through HCN channels.

    PubMed

    Yang, Chen; Yan, Zhiqiang; Zhao, Bo; Wang, Julei; Gao, Guodong; Zhu, Junling; Wang, Wenting

    2016-06-01

    The high-voltage spindles (HVSs), one of the characteristic oscillations that include theta frequencies in the basal ganglia (BG)-cortical system, are involved in immobile behavior and show increasing power in Parkinson's disease (PD). Our previous results suggested that the D2 dopamine receptor might be involved in HVSs modulations in a rat model of PD. Membrane resonance is one of the cellular mechanisms of network oscillation; therefore, we investigated how dopamine modulates the theta frequency membrane resonance of neurons in the subthalamic nucleus (STN), a central pacemaker of BG, and whether such changes in STN neurons subsequently alter HVSs in the BG-cortical system. In particular, we tested whether dopamine modulates HVSs through hyperpolarization-activated cyclic nucleotide-gated (HCN) channels-dependent membrane resonance in STN neurons. We found that an antagonist of D2 receptors, but not of D1 receptors, inhibited membrane resonance and HCN currents of STN neurons through a G-protein activity in acute brain slices. Our further in vivo experiments using local injection of a D2 receptor antagonist or an HCN blocker in STNs of free-moving rats showed an increase in HVSs power and correlation in the BG-cortical system. Local injection of lamotrigine, an HCN agonist, counteracted the effect induced by the D2 antagonist. Taken together, our results revealed a potential cellular mechanism underlying HVSs activity modulation in the BG-cortical system, i.e. tuning HCN activities in STN neurons through dopamine D2 receptors. Our findings might lead to a new direction in PD treatment by providing promising new drug targets for HVSs activity modulation.

  11. Thermal Evaluation of a High-Voltage Ultracapacitor Module for Vehicle Applications (Presentation)

    SciTech Connect

    Lustbader, J.; King, C.; Gonder, J.; Keyser, M.; Pesaran, A.

    2008-07-15

    The objectives of this paper are: (1) identify thermal issues of ultracapacitor cells and modules over a range of vehicle duty cycles to understand and minimize thermal impacts; and (2) identify improvements for ultracapacitor thermal management.

  12. High voltage battery cell scanner development

    NASA Technical Reports Server (NTRS)

    Lepisto, J. W.; Decker, D. K.; Graves, J.

    1983-01-01

    Battery cell voltage scanners have been previously used in low voltage spacecraft applications. In connection with future missions involving an employment of high-power high voltage power subsystems and/or autonomous power subsystem management for unattended operation, it will be necessary to utilize battery cell voltage scanners to provide battery cell voltage information for early detection of impending battery cell degradation/failures. In preparation for such missions, a novel battery cell voltage scanner design has been developed. The novel design makes use of low voltage circuit modules which can be applied to high voltage batteries in a building block fashion. A description is presented of the design concept and test results of the high voltage battery cell scanner, and its operation with an autonomously managed power subsystem is discussed.

  13. High voltage pulse generator

    DOEpatents

    Fasching, George E.

    1977-03-08

    An improved high-voltage pulse generator has been provided which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of a first one of the rectifiers connected between the first and second of the plurality of charging capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. Alternate circuits are provided for controlling the application of the charging voltage from a charging circuit to be applied to the parallel capacitors which provides a selection of at least two different intervals in which the charging voltage is turned "off" to allow the SCR's connecting the capacitors in series to turn "off" before recharging begins. The high-voltage pulse-generating circuit including the N capacitors and corresponding SCR's which connect the capacitors in series when triggered "on" further includes diodes and series-connected inductors between the parallel-connected charging capacitors which allow sufficiently fast charging of the capacitors for a high pulse repetition rate and yet allow considerable control of the decay time of the high-voltage pulses from the pulse-generating circuit.

  14. Efficient circuit triggers high-current, high-voltage pulses

    NASA Technical Reports Server (NTRS)

    Green, E. D.

    1964-01-01

    Modified circuit uses diodes to effectively disconnect the charging resistors from the circuit during the discharge cycle. Result is an efficient parallel charging, high voltage pulse modulator with low voltage rating of components.

  15. Low voltage operation of electro-absorption modulator promising for high-definition 3D imaging application using a three step asymmetric coupled quantum well structure

    NASA Astrophysics Data System (ADS)

    Na, Byung Hoon; Ju, Gun Wu; Choi, Hee Ju; Lee, Soo Kyung; Jeon, Jin Myeong; Cho, Yong Chul; Park, Yong Hwa; Park, Chang Young; Tak Lee, Yong

    2015-01-01

    In this paper, we propose a transmission type electro-absorption modulator (EAM) operating at 850 nm having low operating voltage and high absorption change with low insertion loss using a novel three step asymmetric coupled quantum well (3 ACQW) structure which can be used as an optical image shutter for high-definition (HD) three dimensional (3D) imaging. Theoretical calculations show that the exciton red shift of 3 ACQW structure is more than two times larger than that of rectangular quantum well (RQW) structure while maintaining high absorption change. The EAM having coupled cavities with 3 ACQW structure shows a wide spectral bandwidth and high amplitude modulation at a bias voltage of only -8V, which is 41% lower in operating voltage than that of RQW, making the proposed EAM highly attractive as an optical image shutter for HD 3D imaging applications.

  16. High voltage photo-switch package module having encapsulation with profiled metallized concavities

    DOEpatents

    Sullivan, James S; Sanders, David M; Hawkins, Steven A; Sampayan, Stephen A

    2015-05-05

    A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces metalized with first metallic layers formed thereon, and encapsulated with a dielectric encapsulation material such as for example epoxy. The first metallic layers are exposed through the encapsulation via encapsulation concavities which have a known contour profile, such as a Rogowski edge profile. Second metallic layers are then formed to line the concavities and come in contact with the first metal layer, to form profiled and metalized encapsulation concavities which mitigate enhancement points at the edges of electrodes matingly seated in the concavities. One or more optical waveguides may also be bonded to the substrate for coupling light into the photo-conductive wafer, with the encapsulation also encapsulating the waveguides.

  17. High Voltage Insulation Technology

    NASA Astrophysics Data System (ADS)

    Scherb, V.; Rogalla, K.; Gollor, M.

    2008-09-01

    In preparation of new Electronic Power Conditioners (EPC's) for Travelling Wave Tub Amplifiers (TWTA's) on telecom satellites a study for the development of new high voltage insulation technology is performed. The initiative is mandatory to allow compact designs and to enable higher operating voltages. In a first task a market analysis was performed, comparing different materials with respect to their properties and processes. A hierarchy of selection criteria was established and finally five material candidates (4 Epoxy resins and 1 Polyurethane resin) were selected to be further investigated in the test program. Samples for the test program were designed to represent core elements of an EPC, the high voltage transformer and Printed Circuit Boards of the high voltage section. All five materials were assessed in the practical work flow of the potting process and electrical, mechanical, thermal and lifetime testing was performed. Although the lifetime tests results were overlayed by a larges scatter, finally two candidates have been identified for use in a subsequent qualification program. This activity forms part of element 5 of the ESA ARTES Programme.

  18. High-speed low-voltage single-drive push-pull silicon Mach-Zehnder modulators.

    PubMed

    Dong, Po; Chen, Long; Chen, Young-Kai

    2012-03-12

    We demonstrate a single-drive push-pull silicon Mach-Zehnder modulator (MZM) with a π-phase-shift voltage of 3.1 V and speed up to 30 Gb/s. The on-chip insertion loss is 9 dB due to the use of a 6 mm-long phase shifter. Higher switching speed up to 40-50 Gb/s is also demonstrated in devices with shorter phase shifters which require higher drive voltages but have lower insertion losses.

  19. High voltage variable diameter insulator

    DOEpatents

    Vanacek, D.L.; Pike, C.D.

    1982-07-13

    A high voltage feedthrough assembly having a tubular insulator extending between the ground plane ring and the high voltage ring. The insulator is made of Pyrex and decreases in diameter from the ground plane ring to the high voltage ring, producing equipotential lines almost perpendicular to the wall of the insulator to optimize the voltage-holding capability of the feedthrough assembly.

  20. Low-voltage, high-extinction-ratio, Mach-Zehnder silicon optical modulator for CMOS-compatible integration.

    PubMed

    Ding, Jianfeng; Chen, Hongtao; Yang, Lin; Zhang, Lei; Ji, Ruiqiang; Tian, Yonghui; Zhu, Weiwei; Lu, Yangyang; Zhou, Ping; Min, Rui

    2012-01-30

    We demonstrate a carrier-depletion Mach-Zehnder silicon optical modulator, which is compatible with CMOS fabrication process and works well at a low driving voltage. This is achieved by the optimization of the coplanar waveguide electrode to reduce the electrical signal transmission loss. At the same time, the velocity and impedance matching are both considered. The 12.5 Gbit/s data transmission experiment of the fabricated device with a 2-mm-long phase shifter is performed. The driving voltages with the swing amplitudes of 1 V and 2 V and the reverse bias voltages of 0.5 V and 0.8 V are applied to the device, respectively. The corresponding extinction ratios are 7.67 and 12.79 dB.

  1. High Voltage Seismic Generator

    NASA Astrophysics Data System (ADS)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  2. Insulators for high voltages

    SciTech Connect

    Looms, J.S.T.

    1987-01-01

    This book describes electrical insulators for high voltage applications. Topics considered include the insulating materials, the manufacture of wet process porcelain, the manufacture of tempered glass, the glass-fibre core, the polymeric housing, the common problem - terminating an insulator, mechanical constraints, the physics of pollution flashover, the physics of contamination, testing of insulators, conclusions from testing, remedies for flashover, insulators for special cases, interference and noise, and the insulator of the future.

  3. High voltage generator

    DOEpatents

    Schwemin, A. J.

    1959-03-17

    A generator for producing relatively large currents at high voltages is described. In general, the invention comprises a plurality of capacitors connected in series by a plurality of switches alternately disposed with the capacitors. The above-noted circuit is mounted for movement with respect to contact members and switch closure means so that a load device and power supply are connected across successive numbers of capacitors, while the other capacitors are successively charged with the same power supply.

  4. HIGH VOLTAGE GENERATOR

    DOEpatents

    Schwemin, A.J.

    1959-03-17

    A generator is presented for producing relatively large currents at high voltages. In general, the invention comprises a plurality of capacitors connected in series by a plurality of switches alternately disposed with the capacitors. The circuit is mounted for movement with respect to contact members and switch closure means so that a load device and power supply are connected across successive numbers of capacitors, while the other capacitors are successively charged with the same power supply.

  5. High voltage pulse conditioning

    DOEpatents

    Springfield, Ray M.; Wheat, Jr., Robert M.

    1990-01-01

    Apparatus for conditioning high voltage pulses from particle accelerators in order to shorten the rise times of the pulses. Flashover switches in the cathode stalk of the transmission line hold off conduction for a determinable period of time, reflecting the early portion of the pulses. Diodes upstream of the switches divert energy into the magnetic and electrostatic storage of the capacitance and inductance inherent to the transmission line until the switches close.

  6. HIGH VOLTAGE ION SOURCE

    DOEpatents

    Luce, J.S.

    1960-04-19

    A device is described for providing a source of molecular ions having a large output current and with an accelerated energy of the order of 600 kv. Ions are produced in an ion source which is provided with a water-cooled source grid of metal to effect maximum recombination of atomic ions to molecular ions. A very high accelerating voltage is applied to withdraw and accelerate the molecular ions from the source, and means are provided for dumping the excess electrons at the lowest possible potentials. An accelerating grid is placed adjacent to the source grid and a slotted, grounded accelerating electrode is placed adjacent to the accelerating grid. A potential of about 35 kv is maintained between the source grid and accelerating grid, and a potential of about 600 kv is maintained between the accelerating grid and accelerating electrode. In order to keep at a minimum the large number of oscillating electrons which are created when such high voltages are employed in the vicinity of a strong magnetic field, a plurality of high voltage cascaded shields are employed with a conventional electron dumping system being employed between each shield so as to dump the electrons at the lowest possible potential rather than at 600 kv.

  7. Multijunction high-voltage solar cell

    NASA Technical Reports Server (NTRS)

    Evans, J. C., Jr.; Goradia, C.; Chai, A. T.

    1981-01-01

    Multijunction cell allows for fabrication of high-voltage solar cell on single semiconductor wafer. Photovoltaic energy source using cell is combined on wafer with circuit it is to power. Cell consists of many voltage-generating regions internally or externally interconnected to give desired voltage and current combination. For computer applications, module is built on silicon wafer with energy for internal information processing and readouts derived from external light source.

  8. High voltage variable diameter insulator

    DOEpatents

    Vanecek, David L.; Pike, Chester D.

    1984-01-01

    A high voltage feedthrough assembly (10) having a tubular insulator (15) extending between the ground plane ring (16) and the high voltage ring (30). The insulator (15) is made of Pyrex and decreases in diameter from the ground plane ring (16) to the high voltage ring (30), producing equipotential lines almost perpendicular to the wall (27) of the insulator (15) to optimize the voltage-holding capability of the feedthrough assembly (10).

  9. High voltage isolation transformer

    NASA Technical Reports Server (NTRS)

    Clatterbuck, C. H.; Ruitberg, A. P. (Inventor)

    1985-01-01

    A high voltage isolation transformer is provided with primary and secondary coils separated by discrete electrostatic shields from the surfaces of insulating spools on which the coils are wound. The electrostatic shields are formed by coatings of a compound with a low electrical conductivity which completely encase the coils and adhere to the surfaces of the insulating spools adjacent to the coils. Coatings of the compound also line axial bores of the spools, thereby forming electrostatic shields separating the spools from legs of a ferromagnetic core extending through the bores. The transformer is able to isolate a high constant potential applied to one of its coils, without the occurrence of sparking or corona, by coupling the coatings, lining the axial bores to the ferromagnetic core and by coupling one terminal of each coil to the respective coating encasing the coil.

  10. Totem pole drive decks for the high-voltage, pulsed-power modulator for a large-scale plasma source ion implantation system

    SciTech Connect

    Gribble, R.J.; Reass, W.A.

    1993-07-01

    Plasma source ion implantation (PSII) is an industrially-relevant technique to change the surface composition of materials, thereby improving the mechanical, chemical, electrical, or optical properties. Pre-manufactured parts are immersed in a plasma and are pulsed with a high voltage source that accelerates the ions to the surface, where they become implanted, modifying the surface characteristics. The high voltage applied to the ``workpiece`` is supplied by a high-voltage, pulsed-power modulator capable of operating to 120 kV, with an output pulse width to 20 uS at a repetition rate of up to 2 kHz. Output currents of up to 60 A, and average powers of 225 kW (6.6 MW peak) will be the ultimate capability. Initial system start-up will be limited by a 60 kV, 1 A charging power supply. This paper describes the totem pole drive decks, the ``on`` deck and ``off`` deck, used as a pre-driver to the main high voltage switch tubes which applies power to the workpiece. The pulse length and frequency are externally controlled and then fiber-optically coupled to the modulator totem pole drive decks. The circuitry of the planar triode drivers will be presented in addition to experimental results.

  11. High voltage feedthrough bushing

    DOEpatents

    Brucker, John P.

    1993-01-01

    A feedthrough bushing for a high voltage diode provides for using compression sealing for all sealing surfaces. A diode assembly includes a central conductor extending through the bushing and a grading ring assembly circumferentially surrounding and coaxial with the central conductor. A flexible conductive plate extends between and compressively seals against the central conductor and the grading ring assembly, wherein the flexibility of the plate allows inner and outer portions of the plate to axially translate for compression sealing against the central conductor and the grading ring assembly, respectively. The inner portion of the plate is bolted to the central conductor for affecting sealing. A compression beam is also bolted to the central conductor and engages the outer portion of the plate to urge the outer portion toward the grading ring assembly to obtain compression sealing therebetween.

  12. Low voltage to high voltage level shifter and related methods

    NASA Technical Reports Server (NTRS)

    Mentze, Erik J. (Inventor); Hess, Herbert L. (Inventor); Buck, Kevin M. (Inventor); Cox, David F. (Inventor)

    2006-01-01

    A shifter circuit comprises a high and low voltage buffer stages and an output buffer stage. The high voltage buffer stage comprises multiple transistors arranged in a transistor stack having a plurality of intermediate nodes connecting individual transistors along the stack. The transistor stack is connected between a voltage level being shifted to and an input voltage. An inverter of this stage comprises multiple inputs and an output. Inverter inputs are connected to a respective intermediate node of the transistor stack. The low voltage buffer stage has an input connected to the input voltage and an output, and is operably connected to the high voltage buffer stage. The low voltage buffer stage is connected between a voltage level being shifted away from and a lower voltage. The output buffer stage is driven by the outputs of the high voltage buffer stage inverter and the low voltage buffer stage.

  13. Calibration of Voltage Transformers and High- Voltage Capacitors at NIST

    PubMed Central

    Anderson, William E.

    1989-01-01

    The National Institute of Standards and Technology (NIST) calibration service for voltage transformers and high-voltage capacitors is described. The service for voltage transformers provides measurements of ratio correction factors and phase angles at primary voltages up to 170 kV and secondary voltages as low as 10 V at 60 Hz. Calibrations at frequencies from 50–400 Hz are available over a more limited voltage range. The service for high-voltage capacitors provides measurements of capacitance and dissipation factor at applied voltages ranging from 100 V to 170 kV at 60 Hz depending on the nominal capacitance. Calibrations over a reduced voltage range at other frequencies are also available. As in the case with voltage transformers, these voltage constraints are determined by the facilities at NIST. PMID:28053409

  14. Comparative High Voltage Impulse Measurement

    PubMed Central

    FitzPatrick, Gerald J.; Kelley, Edward F.

    1996-01-01

    A facility has been developed for the determination of the ratio of pulse high voltage dividers over the range from 10 kV to 300 kV using comparative techniques with Kerr electro-optic voltage measurement systems and reference resistive voltage dividers. Pulse voltage ratios of test dividers can be determined with relative expanded uncertainties of 0.4 % (coverage factor k = 2 and thus a two standard deviation estimate) or less using the complementary resistive divider/Kerr cell reference systems. This paper describes the facility and specialized procedures used at NIST for the determination of test voltage divider ratios through comparative techniques. The error sources and special considerations in the construction and use of reference voltage dividers to minimize errors are discussed, and estimates of the measurement uncertainties are presented. PMID:27805083

  15. Thyratron Marx High Voltage Generator.

    DTIC Science & Technology

    This invention relates to a high voltage pulse generator of the Marx type, in which capacitors are charged in parallel and discharged in series...Amongst the many techniques for producing high voltage pulses, the Marx generator is probably the best known and most widely used. For the combination of...short risetime and low output impendance (i.e. high power), large energy, high efficiency and waveform flexibility -- the Marx principle is peerless

  16. High voltage solar array experiments

    NASA Technical Reports Server (NTRS)

    Kennerud, K. L.

    1974-01-01

    The interaction between the components of a high voltage solar array and a simulated space plasma is studied to obtain data for the design of a high voltage solar array capable of 15kW at 2 to 16kV. Testing was conducted in a vacuum chamber 1.5-m long by 1.5-m diameter having a plasma source which simulated the plasma conditions existing in earth orbit between 400 nautical miles and synchronous altitude. Test samples included solar array segments pinholes in insulation covering high voltage electrodes, and plain dielectric samples. Quantitative data are presented in the areas of plasma power losses, plasma and high voltage induced damage, and dielectric properties. Limitations of the investigation are described.

  17. High voltage power transistor development

    NASA Technical Reports Server (NTRS)

    Hower, P. L.

    1981-01-01

    Design considerations, fabrication procedures, and methods of evaluation for high-voltage power-transistor development are discussed. Technique improvements such as controlling the electric field at the surface and perserving lifetimes in the collector region which have advanced the state of the art in high-voltage transistors are discussed. These improvements can be applied directly to the development of 1200 volt, 200 ampere transistors.

  18. Controllable high voltage source having fast settling time

    NASA Technical Reports Server (NTRS)

    Doong, H.; Acuna, M. H. (Inventor)

    1975-01-01

    A high voltage dc stepping power supply for sampling a utilization device such as an electrostatic analyzer has a relatively fast settling time for voltage steps. The supply includes a waveform generator for deriving a low voltage staircase waveform that feeds a relatively long response time power supply, deriving a high output voltage generally equal to a predetermined multiple of the input voltage. In the power supply, an ac voltage modulated by the staircase waveform is applied to a step-up transformer and then to a voltage multiplier stack to form a high voltage, relatively poor replica of the input waveform at an intermediate output terminal. A constant dc source, applied to the input of the power supply, biases the voltage at the intermediate output terminal to be in excess of the predetermined multiple of the input voltage.

  19. Module Two: Voltage; Basic Electricity and Electronics Individualized Learning System.

    ERIC Educational Resources Information Center

    Bureau of Naval Personnel, Washington, DC.

    In this module the student will study and learn what voltage is, how it is generated, what AC (alternating current) and DC (direct current) are and why both kinds are needed, and how to measure voltages. The module is divided into six lessons: EMF (electromotive force) from chemical action, magnetism, electromagnetic induction, AC voltage, the…

  20. High-Efficiency Power Module

    NASA Technical Reports Server (NTRS)

    Simons, Rainee N. (Inventor); Wintucky, Edwin G. (Inventor)

    2015-01-01

    One or more embodiments of the present invention pertain to an all solid-state microwave power module. The module includes a plurality of solid-state amplifiers configured to amplify a signal using a low power stage, a medium power stage, and a high power stage. The module also includes a power conditioner configured to activate a voltage sequencer (e.g., bias controller) when power is received from a power source. The voltage sequencer is configured to sequentially apply voltage to a gate of each amplifier and sequentially apply voltage to a drain of each amplifier.

  1. High-Efficiency Power Module

    NASA Technical Reports Server (NTRS)

    Simons, Rainee N (Inventor); Wintucky, Edwin G (Inventor)

    2013-01-01

    One or more embodiments of the present invention pertain to an all solid-state microwave power module. The module includes a plurality of solid-state amplifiers configured to amplify a signal using a low power stage, a medium power stage, and a high power stage. The module also includes a power conditioner configured to activate a voltage sequencer (e.g., bias controller) when power is received from a power source. The voltage sequencer is configured to sequentially apply voltage to a gate of each amplifier and sequentially apply voltage to a drain of each amplifier.

  2. Improved Programmable High-Voltage Power Supply

    NASA Technical Reports Server (NTRS)

    Castell, Karen; Rutberg, Arthur

    1994-01-01

    Improved dc-to-dc converter functions as programmable high-voltage power supply with low-power-dissipation voltage regulator on high-voltage side. Design of power supply overcomes deficiencies of older designs. Voltage regulation with low power dissipation provided on high-voltage side.

  3. Voltage modulation of propagating spin waves in Fe

    SciTech Connect

    Nawaoka, Kohei; Shiota, Yoichi; Miwa, Shinji; Tamura, Eiiti; Tomita, Hiroyuki; Mizuochi, Norikazu; Shinjo, Teruya; Suzuki, Yoshishige

    2015-05-07

    The effect of a voltage application on propagating spin waves in single-crystalline 5 nm-Fe layer was investigated. Two micro-sized antennas were employed to excite and detect the propagating spin waves. The voltage effect was characterized using AC lock-in technique. As a result, the resonant field of the magnetostatic surface wave in the Fe was clearly modulated by the voltage application. The modulation is attributed to the voltage induced magnetic anisotropy change in ferromagnetic metals.

  4. Low voltage drop plasma switch for inverter and modulator applications

    NASA Astrophysics Data System (ADS)

    Goebel, D. M.; Poeschel, R. L.; Schumacher, R. W.

    1993-08-01

    A low forward voltage drop plasma switch has been developed for high-efficiency inverter and modulator applications. The switch, called the HOLLOTRON, is based on a grid-controlled, thermionic hollow-cathode discharge. A low forward voltage drop (10-20 V) is achieved by operating the hollow-cathode discharge in a static gas pressure of xenon. The dense plasma generated in the Ba-oxide dispenser hollow cathode is spread over a relatively large control grid area by a diverging magnetic field superimposed on the discharge. Interruption of the discharge current at high current densities (≳4 A/cm2) over the grid area is achieved by biasing the control grid sufficiently negative with respect to the plasma. The HOLLOTRON switch has demonstrated voltage stand-off of up to 20 kV, switching times of ≤0.3 μs, and pulse repetition frequencies of 20 kHz at 50% duty.

  5. High voltage thermal cells

    NASA Astrophysics Data System (ADS)

    Ryan, David M.

    An experiment aimed at a search for new, high-energy cathodes for thermal cells is described. The experiment has begun to reduce the solubility, volatility, and mobility of the cathode materials by preparing and testing massive, relatively immobile cathode molecules. A good candidate for this is the vanadium series, which forms rings, chains, clusters and Keggin compounds. The first three compounds of this genre have been prepared: K3V5O14, Na6V10O28, and K7(Ni4+V13O30). Only the first of these compounds has been tested as a cathode material. The K3V5O14 demonstrated better performance than V2O5, but it is not as good as the FeS2 cells used for benchmarks.

  6. The high voltage homopolar generator

    NASA Astrophysics Data System (ADS)

    Price, J. H.; Gully, J. H.; Driga, M. D.

    1986-11-01

    System and component design features of proposed high voltage homopolar generator (HVHPG) are described. The system is to have an open circuit voltage of 500 V, a peak output current of 500 kA, 3.25 MJ of stored inertial energy and possess an average magnetic-flux density of 5 T. Stator assembly components are discussed, including the stator, mount structure, hydrostatic bearings, main and motoring brushgears and rotor. Planned operational procedures such as monitoring the rotor to full speed and operation with a superconducting field coil are delineated.

  7. High Voltage Space Solar Arrays

    NASA Technical Reports Server (NTRS)

    Ferguson, D. C.; Hillard, G. B.; Vayner, B. V.; Galofaro, J. T.; Lyons, Valerie (Technical Monitor)

    2002-01-01

    Recent tests performed at the NASA Glenn Research Center and elsewhere have shown promise in the design and construction of high voltage (300-1000 V) solar arrays for space applications. Preliminary results and implications for solar array design will be discussed, with application to direct-drive electric propulsion and space solar power.

  8. LHCb calorimeters high voltage system

    NASA Astrophysics Data System (ADS)

    Gilitsky, Yu.; Golutvin, A.; Konoplyannikov, A.; Lefrancois, J.; Perret, P.; Schopper, A.; Soldatov, M.; Yakimchuk, V.

    2007-02-01

    The calorimeter system in LHCb aims to identify electrons, photons and hadrons. All calorimeters are equipped with Hamamatsu photo tubes as devices for light to signal conversion. Eight thousand R7899-20 tubes are used for electromagnetic and hadronic calorimeters and two hundred 64 channels multi-anode R7600-00-M64 for Scintillator-Pad/Preshower detectors. The calorimeter high voltage (HV) system is based on a Cockroft Walton (CW) voltage converter and a control board connected to the Experiment Control System (ECS) by serial bus. The base of each photomultiplier tube (PMT) is built with a high voltage converter and constructed on an individual printed circuit board, using compact surface mount components. The base is attached directly to the PMT. There are no HV cables in the system. A Field Programmable Gate Array (FPGA) is used on the control board as an interface between the ECS and the 200 control channels. The FPGA includes also additional functionalities allowing automated monitoring and ramp up of the high voltage values. This paper describes the HV system architecture, some technical details of the electronics implementation and summarizes the system performance. This safe and low power consumption HV electronic system for the photomultiplier tubes can be used for various biomedical apparatus too.

  9. Compact high-voltage structures

    SciTech Connect

    Wilson, M. J.; Goerz, D.A.

    1997-06-09

    A basic understanding of the critical issues limiting the compactness of high-voltage systems is required for the next generation of impulse generators. In the process of optimizing the design of a highly reliable solid-dielectric over-voltage switch, an understanding of the limiting factors found are shown. Results of a l3O kV operating switch, having a modest field enhancement of 16% above the average field stress in the switching region, are reported. The resulting high reliability is obtained by reducing the standard deviation of the switch to 6.8%. The total height of the switch is 1 mm. The resulting operating parameters are obtained by controlling field distribution across the entire switch package and field shaping the desired point of switch closure. The disclosed field management technique provides an approach to improve other highly stressed components and structures.

  10. High-Voltage Droplet Dispenser

    NASA Technical Reports Server (NTRS)

    Eichenberg, Dennis J.

    2003-01-01

    An apparatus that is extremely effective in dispensing a wide range of droplets has been developed. This droplet dispenser is unique in that it utilizes a droplet bias voltage, as well as an ionization pulse, to release a droplet. Apparatuses that deploy individual droplets have been used in many applications, including, notably, study of combustion of liquid fuels. Experiments on isolated droplets are useful in that they enable the study of droplet phenomena under well-controlled and simplified conditions. In this apparatus, a syringe dispenses a known value of liquid, which emerges from, and hangs onto, the outer end of a flat-tipped, stainless steel needle. Somewhat below the needle tip and droplet is a ring electrode. A bias high voltage, followed by a high-voltage pulse, is applied so as to attract the droplet sufficiently to pull it off the needle. The voltages are such that the droplet and needle are negatively charged and the ring electrode is positively charged.

  11. Low voltage integrated optics electro-optical modulator applied to optical voltage transformer based on WLI technique

    NASA Astrophysics Data System (ADS)

    Santos, J. C.; Rubini, J.; Silva, L. P. C.; Caetano, R. E.

    2015-09-01

    The use of two electro-optical modulators linked in series, one for sensing and one for recovering signals, was formerly presented by some of the authors as a solution for interrogation of optical fiber sensor systems based on WLI method. A key feature required from such systems is that half-wave voltage (Vπ) of recovering modulator must be as small as possible. Aiming at meeting this requirement, in this paper it is presented the use of an unbalanced Michelson Interferometer implemented using an integrated optics component as recover interferometer in an optical voltage transformer intended for high voltage measurements.

  12. High voltage photovoltaic power converter

    DOEpatents

    Haigh, Ronald E.; Wojtczuk, Steve; Jacobson, Gerard F.; Hagans, Karla G.

    2001-01-01

    An array of independently connected photovoltaic cells on a semi-insulating substrate contains reflective coatings between the cells to enhance efficiency. A uniform, flat top laser beam profile is illuminated upon the array to produce electrical current having high voltage. An essentially wireless system includes a laser energy source being fed through optic fiber and cast upon the photovoltaic cell array to prevent stray electrical signals prior to use of the current from the array. Direct bandgap, single crystal semiconductor materials, such as GaAs, are commonly used in the array. Useful applications of the system include locations where high voltages are provided to confined spaces such as in explosive detonation, accelerators, photo cathodes and medical appliances.

  13. TRANSISTOR HIGH VOLTAGE POWER SUPPLY

    DOEpatents

    Driver, G.E.

    1958-07-15

    High voltage, direct current power supplies are described for use with battery powered nuclear detection equipment. The particular advantages of the power supply described, are increased efficiency and reduced size and welght brought about by the use of transistors in the circuit. An important feature resides tn the employment of a pair of transistors in an alternatefiring oscillator circuit having a coupling transformer and other circuit components which are used for interconnecting the various electrodes of the transistors.

  14. High Voltage Conductors in Spacecraft

    DTIC Science & Technology

    1993-05-07

    STATEMENT Approved for public release; distribution is 93-16916 unlimited. I I III i 13. ABSTRACT (Maximum 200 words) Future solar arrays are being...Master of Science in Aeronautics and Astronautics Future solar arrays are being designed for much higher voltages in order to meet high power demands...5 Conclusions 85 5.1 Summary of Results .................................... 5.2 Recommendations for Future Work

  15. Low-voltage differentially-signaled modulators

    DOEpatents

    Zortman, William A.; Lentine, Anthony L.; Hsia, Alexander H.; Watts, Michael R.

    2015-09-08

    Photonic modulators and methods of modulating an input optical signal are provided. A photonic modulator includes at least one modulator section and differential drive circuitry. The at least one modulator section includes a P-type layer and an N-type layer forming a PN junction in the modulator section. The differential drive circuitry is electrically coupled to the P-type layer and the N-type layer of the at least one modulator section.

  16. Thickness-dependent voltage-modulated magnetism in multiferroic heterostructures

    NASA Astrophysics Data System (ADS)

    Shu, Li; Li, Zheng; Ma, Jing; Gao, Ya; Gu, Lin; Shen, Yang; Lin, Yuanhua; Nan, C. W.

    2012-01-01

    The voltage-modulated magnetic behavior in multiferroic Ni/BaTiO3 heterostructures grown on SrTiO3 single crystal substrate was observed by the magneto-optical Kerr effect measurement in an AC modulation technique with synchronizing the frequency of the Kerr signal detector to the low-frequency AC actuation voltage. The results showed coexistence at room-temperature of two magnetoelectric (ME) mechanisms, i.e., strain- and interface charge-mediated couplings. The interaction between the different ME couplings leads to a remarkable thickness-dependent voltage modulation of the magnetic behavior.

  17. Energy harvesting in high voltage measuring techniques

    NASA Astrophysics Data System (ADS)

    Żyłka, Pawel; Doliński, Marcin

    2016-02-01

    The paper discusses selected problems related to application of energy harvesting (that is, generating electricity from surplus energy present in the environment) to supply autonomous ultra-low-power measurement systems applicable in high voltage engineering. As a practical example of such implementation a laboratory model of a remote temperature sensor is presented, which is self-powered by heat generated in a current-carrying busbar in HV- switchgear. Presented system exploits a thermoelectric harvester based on a passively cooled Peltier module supplying micro-power low-voltage dc-dc converter driving energy-efficient temperature sensor, microcontroller and a fibre-optic transmitter. Performance of the model in laboratory simulated conditions are presented and discussed.

  18. High voltage RF feedthrough bushing

    DOEpatents

    Grotz, Glenn F.

    1984-01-01

    Described is a multi-element, high voltage radio frequency bushing for trmitting RF energy to an antenna located in a vacuum container. The bushing includes a center conductor of complex geometrical shape, an outer coaxial shield conductor, and a thin-walled hollow truncated cone insulator disposed between central and outer conductors. The shape of the center conductor, which includes a reverse curvature portion formed of a radially inwardly directed shoulder and a convex portion, controls the uniformity of the axial surface gradient on the insulator cone. The outer shield has a first substantially cylindrical portion and a second radially inwardly extending truncated cone portion.

  19. High Voltage TAL Erosion Characterization

    NASA Technical Reports Server (NTRS)

    Jacobson, David T.

    2003-01-01

    Extended operation of a D-80 anode layer thruster at high voltage was investigated. The thruster was operated for 1200 hours at 700 Volts and 4 Amperes. Laser profilometry was employed to quantify the erosion of the thruster's graphite guard rings and electrodes at 0, 300, 600, 900, and 1200 hours. Thruster performance and electrical characteristics were monitored over the duration of the investigation. The guard rings exhibited asymmetric erosion that was greatest in the region of the cathode. Erosion of the guard rings exposed the magnet poles between 600 to 900 hours of operation.

  20. A Spherical Electro Optic High Voltage Sensor

    DTIC Science & Technology

    1989-06-01

    electro - optic (EO) crystal is introduced for photonic measurement of pulsed high-voltage fields. A spherical shape is used in order to reduce electric field gradients in the vicinity of the sensor. The sensor is pure dielectric and is interrogated remotely using a laser. The sensor does not require the connection of any conducting components, which results in the highest electrical isolation. The spherical nature of the crystal coupled with the incident laser beam, and crossed polarizers (intensity modulation scheme). automatically produces interference figures. The

  1. E-beam high voltage switching power supply

    DOEpatents

    Shimer, D.W.; Lange, A.C.

    1997-03-11

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360{degree}/n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load. 7 figs.

  2. E-beam high voltage switching power supply

    DOEpatents

    Shimer, Daniel W.; Lange, Arnold C.

    1997-01-01

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360.degree./n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load.

  3. E-beam high voltage switching power supply

    DOEpatents

    Shimer, Daniel W.; Lange, Arnold C.

    1996-01-01

    A high-power power supply produces a controllable, constant high voltage put under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  4. E-beam high voltage switching power supply

    DOEpatents

    Shimer, D.W.; Lange, A.C.

    1996-10-15

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 figs.

  5. Influence of driving voltage of liquid crystal on modulation phase

    NASA Astrophysics Data System (ADS)

    Guo, Hongyang; Du, Shengping

    2017-09-01

    Based on the elastic theory and the dynamics equation of liquid crystal, we use Finite-Difference iterative method to calculate the liquid crystal molecules director distributions under the effect of electric field. According to the director distributions, this paper gets the relationship between LCD modulation phase and the driving voltage. The results of simulation proves that with driving voltage varying from 0 to 5v and the crystal modulation phase varies from 0 to 4π.

  6. Electro-optic high voltage sensor

    DOEpatents

    Davidson, James R.; Seifert, Gary D.

    2002-01-01

    A small sized electro-optic voltage sensor capable of accurate measurement of high levels of voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation into the sensor. A polarization beam displacer serves as a filter to separate the input beam into two beams with orthogonal linear polarizations. The beam displacer is oriented in such a way as to rotate the linearly polarized beams such that they enter a Pockels crystal having at a preferred angle of 45 degrees. The beam displacer is therefore capable of causing a linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels electro-optic effect induces a differential phase shift on the major and minor axes of the input beam as it travels through the Pockels crystal, which causes the input beam to be elliptically polarized. A reflecting prism redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization representing the major and minor axes. The system may include a detector for converting the output beams into electrical signals, and a signal processor for determining the voltage based on an analysis of the output beams. The output beams are amplitude modulated by the frequency of the electric field and the amplitude of the output beams is proportional to the magnitude of the electric field, which is related to the voltage being measured.

  7. High voltage feed through bushing

    DOEpatents

    Brucker, J.P.

    1993-04-06

    A feed through bushing for a high voltage diode provides for using compression sealing for all sealing surfaces. A diode assembly includes a central conductor extending through the bushing and a grading ring assembly circumferentially surrounding and coaxial with the central conductor. A flexible conductive plate extends between and compressively seals against the central conductor and the grading ring assembly, wherein the flexibility of the plate allows inner and outer portions of the plate to axially translate for compression sealing against the central conductor and the grading ring assembly, respectively. The inner portion of the plate is bolted to the central conductor for affecting sealing. A compression beam is also bolted to the central conductor and engages the outer portion of the plate to urge the outer portion toward the grading ring assembly to obtain compression sealing therebetween.

  8. High voltage load resistor array

    DOEpatents

    Lehmann, Monty Ray

    2005-01-18

    A high voltage resistor comprising an array of a plurality of parallel electrically connected resistor elements each containing a resistive solution, attached at each end thereof to an end plate, and about the circumference of each of the end plates, a corona reduction ring. Each of the resistor elements comprises an insulating tube having an electrode inserted into each end thereof and held in position by one or more hose clamps about the outer periphery of the insulating tube. According to a preferred embodiment, the electrode is fabricated from stainless steel and has a mushroom shape at one end, that inserted into the tube, and a flat end for engagement with the end plates that provides connection of the resistor array and with a load.

  9. Low power, scalable multichannel high voltage controller

    DOEpatents

    Stamps, James Frederick; Crocker, Robert Ward; Yee, Daniel Dadwa; Dils, David Wright

    2006-03-14

    A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

  10. Low power, scalable multichannel high voltage controller

    DOEpatents

    Stamps, James Frederick; Crocker, Robert Ward; Yee, Daniel Dadwa; Dils, David Wright

    2008-03-25

    A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

  11. System Voltage Potential-Induced Degradation Mechanisms in PV Modules and Methods for Test

    SciTech Connect

    Hacke, P.; Terwilliger, K.; Smith, R.; Glick, S.; Pankow, J.; Kempe, M.; Kurtz, S.; Bennett, I.; Kloos, M.

    2011-01-01

    Over the past decade, degradation and power loss have been observed in PV modules resulting from the stress exerted by system voltage bias. This is due in part to qualification tests and standards that do not adequately evaluate for the durability of modules to the long-term effects of high voltage bias experienced in fielded arrays. High voltage can lead to module degradation by multiple mechanisms. The extent of the voltage bias degradation is linked to the leakage current or culombs passed from the silicon active layer through the encapsulant and glass to the grounded module frame, which can be experimentally determined; however, competing processes make the effect non-linear and history-dependent. Appropriate testing methods and stress levels are described that demonstrate module durability to system voltage potential-induced degradation (PID) mechanisms. This information, along with outdoor testing that is in progress, is used to estimate the acceleration factors needed to evaluate the durability of modules to system voltage stress. Na-rich precipitates are observed on the cell surface after stressing the module to induce PID in damp heat with negative bias applied to the active layer.

  12. System Voltage Potential-Induced Degradation Mechanisms in PV Modules and Methods for Test: Preprint

    SciTech Connect

    Hacke, P.; Terwilliger, K.; Smith, R.; Glick, S.; Pankow, J.; Kempe, M.; Kurtz, S.; Bennett, I.; Kloos, M.

    2011-07-01

    Over the past decade, degradation and power loss have been observed in PV modules resulting from the stress exerted by system voltage bias. This is due in part to qualification tests and standards that do not adequately evaluate for the durability of modules to the long-term effects of high voltage bias experienced in fielded arrays. High voltage can lead to module degradation by multiple mechanisms. The extent of the voltage bias degradation is linked to the leakage current or coulombs passed from the silicon active layer through the encapsulant and glass to the grounded module frame, which can be experimentally determined; however, competing processes make the effect non-linear and history-dependent. Appropriate testing methods and stress levels are described that demonstrate module durability to system voltage potential-induced degradation (PID) mechanisms. This information, along with outdoor testing that is in progress, is used to estimate the acceleration factors needed to evaluate the durability of modules to system voltage stress. Na-rich precipitates are observed on the cell surface after stressing the module to induce PID in damp heat with negative bias applied to the active layer.

  13. Optical control system for high-voltage terminals

    DOEpatents

    Bicek, John J.

    1978-01-01

    An optical control system for the control of devices in the terminal of an electrostatic accelerator includes a laser that is modulated by a series of preselected codes produced by an encoder. A photodiode receiver is placed in the laser beam at the high-voltage terminal of an electrostatic accelerator. A decoder connected to the photodiode decodes the signals to provide control impulses for a plurality of devices at the high voltage of the terminal.

  14. High voltage design guide. Volume 4: Aircraft

    NASA Astrophysics Data System (ADS)

    Dunbar, W. G.

    1983-01-01

    This report supplies the theoretical background and design techniques needed by an engineer who is designing electrical insulation for high-voltage, high-power components, equipment, and systems for aircraft. A literature survey and abundant bibliography identify references that provide further data on the subjects of partial discharges, corona, field theory and plotting, voids and processes for applying insulation. Both gaseous and solid insulations are treated. Cryogenic and liquid design notes are included. Tests and test equipment for high voltage insulation and equipment are defined. Requirements of test plans and procedures for high-voltage, high-power equipment are identified and illustrated by examples. Suggestions for high-voltage specifications are provided. Very few of the Military and Government specifications deal with system voltages above 10kV, thus most aircraft high-voltage specifications will have to be derived from the power industry specifications and standards produced by ASTM, IEEE, and NEMA.

  15. HIGH VOLTAGE, HIGH CURRENT SPARK GAP SWITCH

    DOEpatents

    Dike, R.S.; Lier, D.W.; Schofield, A.E.; Tuck, J.L.

    1962-04-17

    A high voltage and current spark gap switch comprising two main electrodes insulatingly supported in opposed spaced relationship and a middle electrode supported medially between the main electrodes and symmetrically about the median line of the main electrodes is described. The middle electrode has a perforation aligned with the median line and an irradiation electrode insulatingly supported in the body of the middle electrode normal to the median line and protruding into the perforation. (AEC)

  16. High-Voltage CMOS Controller for Microfluidics.

    PubMed

    Khorasani, M; Behnam, M; van den Berg, L; Backhouse, C J; Elliott, D G

    2009-04-01

    A high-voltage microfluidic controller designed using DALSA semiconductor's 0.8-mum low-voltage/high-voltage complementary metal-oxide semiconductor/double diffused metal-oxide semiconductor process is presented. The chip's four high-voltage output drivers can switch 300 V, and the dc-dc boost converter can generate up to 68 V using external passive components. This integrated circuit represents an advancement in microfluidic technology when used in conjunction with a charge coupling device (CCD)-based optical system and a glass microfluidic channel, enabling a portable and cost-efficient platform for genetic analysis.

  17. High voltage MOSFET switching circuit

    DOEpatents

    McEwan, Thomas E.

    1994-01-01

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

  18. High voltage MOSFET switching circuit

    DOEpatents

    McEwan, T.E.

    1994-07-26

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET. 2 figs.

  19. Influence of dietary sodium modulation on electrocardiographic voltage criteria for left ventricular hypertrophy in normotensive individuals.

    PubMed

    Larson, Carol; Vaidya, Anand; Sun, Bei; Williams, Jonathan S

    2012-01-01

    Dietary sodium intake and left ventricular hypertrophy (LVH) on electrocardiogram (ECG) are both independent determinants of cardiovascular risk. Prior studies demonstrated that acute dietary sodium modulation significantly altered LVH-specific ECG voltage in hypertensive individuals, thus modifying cardiovascular risk prediction; but whether this phenomenon exists in normotensive individuals is not known. We evaluated the influence of dietary sodium intake on ECG voltage and ECG criteria for LVH in normotensive individuals. Retrospective evaluation of ECGs of healthy normotensive individuals (n = 39) who were prospectively randomized to a dietary study protocol of 1 week of high-sodium diet (>200 mmol of sodium per day) and 1 week of low-sodium diet (<10 mmol/d) was conducted. Electrocardiogram voltage amplitudes and biochemical assessments were performed at the end of each dietary intervention. As expected, blood pressure declined and measures of circulating renin-angiotensin-aldosterone system activity rose significantly with low-sodium diet. No significant changes in specific LVH voltage criteria or overall precordial or limb lead ECG voltage amplitudes were detected between diets. Although immediate dietary sodium modulation has been shown to significantly alter LVH-specific ECG voltage and the detection of LVH in hypertensive individuals, dietary sodium intake did not influence ECG voltage in normotensive individuals. Healthy normotensive individuals may exhibit adaptive measures that dampen ECG voltage fluctuations in response to dietary sodium modulation. More specific cardiac imaging studies may provide additional insight into this observation and the influence of dietary sodium in cardiac health.

  20. High Voltage Pulse Testing Survey.

    DTIC Science & Technology

    1985-10-01

    Vacuum 18 I. Direct Current Source 18 2. Pulse 20 3. Insulator Flashover 20 (a) Alumina 20 (b) Organic Materials 23 D...withstand voltage. 3. Insulator Flashover Flashover along insulating surfaces is less than it is along a parallel plate vacuum gap of similar dimensions...K. D. Srivastova, "The Effects of DC Prestress on Impulse Flashover of Insulators in Vacuum ," IEEE Trans on Elec Ins, Vol. EI-9, No. 3, pp.

  1. Outdoor PV Module Degradation of Current-Voltage Parameters: Preprint

    SciTech Connect

    Smith, R. M.; Jordan, D. C.; Kurtz, S. R.

    2012-04-01

    Photovoltaic (PV) module degradation rate analysis quantifies the loss of PV power output over time and is useful for estimating the impact of degradation on the cost of energy. An understanding of the degradation of all current-voltage (I-V) parameters helps to determine the cause of the degradation and also gives useful information for the design of the system. This study reports on data collected from 12 distinct mono- and poly-crystalline modules deployed at the National Renewable Energy Laboratory (NREL) in Golden, Colorado. Most modules investigated showed < 0.5%/year decrease in maximum power due to short-circuit current decline.

  2. Low-voltage switched-current delta-sigma modulator

    NASA Astrophysics Data System (ADS)

    Tan, Nianxiong; Eriksson, Sven

    1995-05-01

    This paper presents the design of a fully differential switched-current delta-sigma modulator using a single 3.3-V power-supply voltage. At system level, we tailor the modulator structure considering the similarity and difference of switched-capacitor and switched-current realizations. At circuit level, we propose a new switched-current memory cell and integrator with improved common mode feedback, without which low power-supply-voltage operation would not be possible. The whole modulator was implemented in a 0.8- micron double-metal digital CMOS process. It occupies an active area of 0.53 x 0.48 mm(sup 2) and consumes a current of 0.6 mA from a single 3.3-V power supply. The measured dynamic range is over 10 b.

  3. Laboratory 15 kV high voltage solar array facility

    NASA Technical Reports Server (NTRS)

    Kolecki, J. C.; Gooder, S. T.

    1976-01-01

    The laboratory high voltage solar array facility is a photoelectric power generating system. Consisting of nine modules with over 23,000 solar cells, the facility is capable of delivering more than a kilowatt of power. The physical and electrical characteristics of the facility are described.

  4. Ultrasonic evaluation of high voltage circuit boards

    NASA Technical Reports Server (NTRS)

    Klima, S. J.; Riley, T. J.

    1976-01-01

    Preliminary observations indicate that an ultrasonic scanning technique may be useful as a quick, low cost, nondestructive method for judging the quality of circuit board materials for high voltage applications. Corona inception voltage tests were conducted on fiberglass-epoxy and fiberglass-polyimide high pressure laminates from 20 to 140 C. The same materials were scanned ultrasonically by utilizing the single transducer, through-transmission technique with reflector plate, and recording variations in ultrasonic energy transmitted through the board thickness. A direct relationship was observed between ultrasonic transmission level and corona inception voltage. The ultrasonic technique was subsequently used to aid selection of high quality circuit boards for the Communications Technology Satellite.

  5. Single Stage High Voltage Power Supply for Ion Energies

    NASA Astrophysics Data System (ADS)

    Herty, F.; Franke, A.; Kiewe, B.

    2008-09-01

    The European Space Mission GOCE, the AlphaBus Platform and the new High Efficiency Multistage Plasma (HEMP) thruster for future telecom missions, have triggered the development of a Generic High Voltage Power Supply referred as "HVPS - Next Generation" at Astrium. Focusing to a generic approach a high voltage module has been designed as a core functional block. It can be manufactured for high voltage levels between a few hundreds Volts up to 2000 Volts at maximum power of 1.4kW per module. Higher power levels can be supported by connecting the necessary number of modules in parallel. The HVPS portfolio comprises different converter topologies which are optimised either for a fixed or a variable input/output voltage. The high voltage module can be used for all converter types [1]. This paper deals with a patented single stage variant, being optimised to deliver a constant output voltage with highest efficiency when supplied by a regulated power bus system. The presented converter topology is a derivation of a single-stage, phase-shift controlled full bridge. The bridge is used to generate an ac voltage which is stepped up by a high voltage transformer. At the high voltage output side, the ac voltage is converted to a dc voltage using a rectifier and filter stage. All high voltage components are accommodated in a separate high voltage assembly which is completely encapsulated using a space proven epoxy-based potting material. The bridge is operated in a way that the transformer current has an almost rectangular shape. This reduces I2R losses of the bridge and the HV transformer and permits the use of small filter capacitors and inductors, resulting in a very high power to mass ratio. According to the a.m. current shape, the presented converter is named 'Flattop converter'. Reduction of copper losses is further achieved by reduction of the proximity losses of the HV transformer secondary and primary windings. All power switches and high voltage rectifier diodes

  6. High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    DOEpatents

    Shimer, Daniel W.; Lange, Arnold C.

    1995-01-01

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  7. High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    DOEpatents

    Shimer, D.W.; Lange, A.C.

    1995-05-23

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

  8. High-voltage-compatible, fully depleted CCDs

    SciTech Connect

    Holland, Stephen E.; Bebek, Chris J.; Dawson, Kyle S.; Emes, JohnE.; Fabricius, Max H.; Fairfield, Jessaym A.; Groom, Don E.; Karcher, A.; Kolbe, William F.; Palaio, Nick P.; Roe, Natalie A.; Wang, Guobin

    2006-05-15

    We describe charge-coupled device (CCD) developmentactivities at the Lawrence Berkeley National Laboratory (LBNL).Back-illuminated CCDs fabricated on 200-300 mu m thick, fully depleted,high-resistivity silicon substrates are produced in partnership with acommercial CCD foundry.The CCDs are fully depleted by the application ofa substrate bias voltage. Spatial resolution considerations requireoperation of thick, fully depleted CCDs at high substrate bias voltages.We have developed CCDs that are compatible with substrate bias voltagesof at least 200V. This improves spatial resolution for a given thickness,and allows for full depletion of thicker CCDs than previously considered.We have demonstrated full depletion of 650-675 mu m thick CCDs, withpotential applications in direct x-ray detection. In this work we discussthe issues related to high-voltage operation of fully depleted CCDs, aswell as experimental results on high-voltage-compatible CCDs.

  9. The role of optoelectronic feedback on Franz-Keldysh voltage modulation of transistor lasers

    NASA Astrophysics Data System (ADS)

    Chang, Chi-Hsiang; Chang, Shu-Wei; Wu, Chao-Hsin

    2016-03-01

    Possessing both the high-speed characteristics of heterojunction bipolar transistors (HBTs) and enhanced radiative recombination of quantum wells (QWs), the light-emitting transistor (LET) which operates in the regime of spontaneous emissions has achieved up to 4.3 GHz modulation bandwidth. A 40 Gbit/s transmission rate can be even achieved using transistor laser (TL). The transistor laser provides not only the current modulation but also direct voltage-controlled modulation scheme of optical signals via Franz-Keldysh (FK) photon-assisted tunneling effect. In this work, the effect of FK absorption on the voltage modulation of TLs is investigated. In order to analyze the dynamics and optical responses of voltage modulation in TLs, the conventional rate equations relevant to diode lasers (DLs) are first modified to include the FK effect intuitively. The theoretical results of direct-current (DC) and small-signal alternating-current (AC) characteristics of optical responses are both investigated. While the DC characteristics look physical, the intrinsic optical response of TLs under the FK voltage modulation shows an AC enhancement with a 20 dB peak, which however is not observed in experiment. A complete model composed of the intrinsic optical transfer function and an electrical transfer function fed back by optical responses is proposed to explain the behaviors of voltage modulation in TLs. The abnormal AC peak disappears through this optoelectronic feedback. With the electrical response along with FK-included photon-carrier rate equations taken into account, the complete voltage-controlled optical modulation response of TLs is demonstrated.

  10. Fast and accurate methods for the performance testing of highly-efficient c-Si photovoltaic modules using a 10 ms single-pulse solar simulator and customized voltage profiles

    NASA Astrophysics Data System (ADS)

    Virtuani, A.; Rigamonti, G.; Friesen, G.; Chianese, D.; Beljean, P.

    2012-11-01

    Performance testing of highly efficient, highly capacitive c-Si modules with pulsed solar simulators requires particular care. These devices in fact usually require a steady-state solar simulator or pulse durations longer than 100-200 ms in order to avoid measurement artifacts. The aim of this work was to validate an alternative method for the testing of highly capacitive c-Si modules using a 10 ms single pulse solar simulator. Our approach attempts to reconstruct a quasi-steady-state I-V (current-voltage) curve of a highly capacitive device during one single 10 ms flash by applying customized voltage profiles--in place of a conventional V ramp—to the terminals of the device under test. The most promising results were obtained by using V profiles which we name ‘dragon-back’ (DB) profiles. When compared to the reference I-V measurement (obtained by using a multi-flash approach with approximately 20 flashes), the DB V profile method provides excellent results with differences in the estimation of Pmax (as well as of Isc, Voc and FF) below ±0.5%. For the testing of highly capacitive devices the method is accurate, fast (two flashes—possibly one—required), cost-effective and has proven its validity with several technologies making it particularly interesting for in-line testing.

  11. Spacecraft high-voltage power supply construction

    NASA Technical Reports Server (NTRS)

    Sutton, J. F.; Stern, J. E.

    1975-01-01

    The design techniques, circuit components, fabrication techniques, and past experience used in successful high-voltage power supplies for spacecraft flight systems are described. A discussion of the basic physics of electrical discharges in gases is included and a design rationale for the prevention of electrical discharges is provided. Also included are typical examples of proven spacecraft high-voltage power supplies with typical specifications for design, fabrication, and testing.

  12. Detecting Faults In High-Voltage Transformers

    NASA Technical Reports Server (NTRS)

    Blow, Raymond K.

    1988-01-01

    Simple fixture quickly shows whether high-voltage transformer has excessive voids in dielectric materials and whether high-voltage lead wires too close to transformer case. Fixture is "go/no-go" indicator; corona appears if transformer contains such faults. Nests in wire mesh supported by cap of clear epoxy. If transformer has defects, blue glow of corona appears in mesh and is seen through cap.

  13. Detecting Faults In High-Voltage Transformers

    NASA Technical Reports Server (NTRS)

    Blow, Raymond K.

    1988-01-01

    Simple fixture quickly shows whether high-voltage transformer has excessive voids in dielectric materials and whether high-voltage lead wires too close to transformer case. Fixture is "go/no-go" indicator; corona appears if transformer contains such faults. Nests in wire mesh supported by cap of clear epoxy. If transformer has defects, blue glow of corona appears in mesh and is seen through cap.

  14. Boeing's High Voltage Solar Tile Test Results

    NASA Technical Reports Server (NTRS)

    Reed, Brian J.; Harden, David E.; Ferguson, Dale C.; Snyder, David B.

    2002-01-01

    Real concerns of spacecraft charging and experience with solar array augmented electrostatic discharge arcs on spacecraft have minimized the use of high voltages on large solar arrays despite numerous vehicle system mass and efficiency advantages. Boeing's solar tile (patent pending) allows high voltage to be generated at the array without the mass and efficiency losses of electronic conversion. Direct drive electric propulsion and higher power payloads (lower spacecraft weight) will benefit from this design. As future power demand grows, spacecraft designers must use higher voltage to minimize transmission loss and power cable mass for very large area arrays. This paper will describe the design and discuss the successful test of Boeing's 500-Volt Solar Tile in NASA Glenn's Tenney chamber in the Space Plasma Interaction Facility. The work was sponsored by NASA's Space Solar Power Exploratory Research and Technology (SERT) Program and will result in updated high voltage solar array design guidelines being published.

  15. 30 CFR 75.826 - High-voltage trailing cables.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage trailing cables. 75.826 Section 75... HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution High-Voltage Longwalls § 75.826 High-voltage trailing cables. High-voltage trailing cables must: (a)...

  16. Contrast distortion induced by modulation voltage in scanning capacitance microscopy

    NASA Astrophysics Data System (ADS)

    Chang, M. N.; Hu, C. W.; Chou, T. H.; Lee, Y. J.

    2012-08-01

    With a dark-mode scanning capacitance microscopy (SCM), we directly observed the influence of SCM modulation voltage (MV) on image contrasts. For electrical junctions, an extensive modulated area induced by MV may lead to noticeable changes in the SCM signal phase and intensity, resulting in a narrowed junction image and a broadened carrier concentration profile. This contrast distortion in SCM images may occur even if the peak-to-peak MV is down to 0.3 V. In addition, MV may shift the measured electrical junction depth. The balance of SCM signals components explain these MV-induced contrast distortions.

  17. High voltage planar multijunction solar cell

    NASA Technical Reports Server (NTRS)

    Evans, J. C., Jr.; Chai, A. T.; Goradia, C. P. (Inventor)

    1982-01-01

    A high voltage multijunction solar cell is provided wherein a plurality of discrete voltage generating regions or unit cells are formed in a single generally planar semiconductor body. The unit cells are comprised of doped regions of opposite conductivity type separated by a gap or undiffused region. Metal contacts connect adjacent cells together in series so that the output voltages of the individual cells are additive. In some embodiments, doped field regions separated by a overlie the unit cells but the cells may be formed in both faces of the wafer.

  18. Experimental validation of prototype high voltage bushing

    NASA Astrophysics Data System (ADS)

    Shah, Sejal; Tyagi, H.; Sharma, D.; Parmar, D.; M. N., Vishnudev; Joshi, K.; Patel, K.; Yadav, A.; Patel, R.; Bandyopadhyay, M.; Rotti, C.; Chakraborty, A.

    2017-08-01

    Prototype High voltage bushing (PHVB) is a scaled down configuration of DNB High Voltage Bushing (HVB) of ITER. It is designed for operation at 50 kV DC to ensure operational performance and thereby confirming the design configuration of DNB HVB. Two concentric insulators viz. Ceramic and Fiber reinforced polymer (FRP) rings are used as double layered vacuum boundary for 50 kV isolation between grounded and high voltage flanges. Stress shields are designed for smooth electric field distribution. During ceramic to Kovar brazing, spilling cannot be controlled which may lead to high localized electrostatic stress. To understand spilling phenomenon and precise stress calculation, quantitative analysis was performed using Scanning Electron Microscopy (SEM) of brazed sample and similar configuration modeled while performing the Finite Element (FE) analysis. FE analysis of PHVB is performed to find out electrical stresses on different areas of PHVB and are maintained similar to DNB HV Bushing. With this configuration, the experiment is performed considering ITER like vacuum and electrical parameters. Initial HV test is performed by temporary vacuum sealing arrangements using gaskets/O-rings at both ends in order to achieve desired vacuum and keep the system maintainable. During validation test, 50 kV voltage withstand is performed for one hour. Voltage withstand test for 60 kV DC (20% higher rated voltage) have also been performed without any breakdown. Successful operation of PHVB confirms the design of DNB HV Bushing. In this paper, configuration of PHVB with experimental validation data is presented.

  19. 30 CFR 75.826 - High-voltage trailing cables.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false High-voltage trailing cables. 75.826 Section 75...-Voltage Longwalls § 75.826 High-voltage trailing cables. High-voltage trailing cables must: (a) Meet existing trailing cable requirements and the approval requirements of the high-voltage continuous mining...

  20. 30 CFR 75.826 - High-voltage trailing cables.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false High-voltage trailing cables. 75.826 Section 75...-Voltage Longwalls § 75.826 High-voltage trailing cables. High-voltage trailing cables must: (a) Meet existing trailing cable requirements and the approval requirements of the high-voltage continuous mining...

  1. 30 CFR 75.826 - High-voltage trailing cables.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false High-voltage trailing cables. 75.826 Section 75...-Voltage Longwalls § 75.826 High-voltage trailing cables. High-voltage trailing cables must: (a) Meet existing trailing cable requirements and the approval requirements of the high-voltage continuous mining...

  2. 30 CFR 75.826 - High-voltage trailing cables.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 1 2014-07-01 2014-07-01 false High-voltage trailing cables. 75.826 Section 75...-Voltage Longwalls § 75.826 High-voltage trailing cables. High-voltage trailing cables must: (a) Meet existing trailing cable requirements and the approval requirements of the high-voltage continuous mining...

  3. High voltage electrical amplifier having a short rise time

    DOEpatents

    Christie, David J.; Dallum, Gregory E.

    1991-01-01

    A circuit, comprising an amplifier and a transformer is disclosed that produces a high power pulse having a fast response time, and that responds to a digital control signal applied through a digital-to-analog converter. The present invention is suitable for driving a component such as an electro-optic modulator with a voltage in the kilovolt range. The circuit is stable at high frequencies and during pulse transients, and its impedance matching circuit matches the load impedance with the output impedance. The preferred embodiment comprises an input stage compatible with high-speed semiconductor components for amplifying the voltage of the input control signal, a buffer for isolating the input stage from the output stage; and a plurality of current amplifiers connected to the buffer. Each current amplifier is connected to a field effect transistor (FET), which switches a high voltage power supply to a transformer which then provides an output terminal for driving a load. The transformer comprises a plurality of transmission lines connected to the FETs and the load. The transformer changes the impedance and voltage of the output. The preferred embodiment also comprises a low voltage power supply for biasing the FETs at or near an operational voltage.

  4. Programmable high voltage power supply with regulation confined to the high voltage section

    NASA Technical Reports Server (NTRS)

    Castell, Karen D. (Inventor); Ruitberg, Arthur P. (Inventor)

    1994-01-01

    A high voltage power supply in a dc-dc converter configuration includes a pre-regulator which filters and regulates the dc input and drives an oscillator which applies, in turn, a low voltage ac signal to the low side of a step-up high voltage transformer. The high voltage side of the transformer drives a voltage multiplier which provides a stepped up dc voltage to an output filter. The output voltage is sensed by a feedback network which then controls a regulator. Both the input and output of the regulator are on the high voltage side, avoiding isolation problems. The regulator furnishes a portion of the drive to the voltage multiplier, avoiding having a regulator in series with the load with its attendant, relatively high power losses. This power supply is highly regulated, has low power consumption, a low parts count and may be manufactured at low cost. The power supply has a programmability feature that allows for the selection of a large range of output voltages.

  5. Bipolar high-repetition-rate high-voltage nanosecond pulser

    SciTech Connect

    Tian Fuqiang; Wang Yi; Shi Hongsheng; Lei Qingquan

    2008-06-15

    The pulser designed is mainly used for producing corona plasma in waste water treatment system. Also its application in study of dielectric electrical properties will be discussed. The pulser consists of a variable dc power source for high-voltage supply, two graded capacitors for energy storage, and the rotating spark gap switch. The key part is the multielectrode rotating spark gap switch (MER-SGS), which can ensure wider range modulation of pulse repetition rate, longer pulse width, shorter pulse rise time, remarkable electrical field distortion, and greatly favors recovery of the gap insulation strength, insulation design, the life of the switch, etc. The voltage of the output pulses switched by the MER-SGS is in the order of 3-50 kV with pulse rise time of less than 10 ns and pulse repetition rate of 1-3 kHz. An energy of 1.25-125 J per pulse and an average power of up to 10-50 kW are attainable. The highest pulse repetition rate is determined by the driver motor revolution and the electrode number of MER-SGS. Even higher voltage and energy can be switched by adjusting the gas pressure or employing N{sub 2} as the insulation gas or enlarging the size of MER-SGS to guarantee enough insulation level.

  6. Bipolar high-repetition-rate high-voltage nanosecond pulser.

    PubMed

    Tian, Fuqiang; Wang, Yi; Shi, Hongsheng; Lei, Qingquan

    2008-06-01

    The pulser designed is mainly used for producing corona plasma in waste water treatment system. Also its application in study of dielectric electrical properties will be discussed. The pulser consists of a variable dc power source for high-voltage supply, two graded capacitors for energy storage, and the rotating spark gap switch. The key part is the multielectrode rotating spark gap switch (MER-SGS), which can ensure wider range modulation of pulse repetition rate, longer pulse width, shorter pulse rise time, remarkable electrical field distortion, and greatly favors recovery of the gap insulation strength, insulation design, the life of the switch, etc. The voltage of the output pulses switched by the MER-SGS is in the order of 3-50 kV with pulse rise time of less than 10 ns and pulse repetition rate of 1-3 kHz. An energy of 1.25-125 J per pulse and an average power of up to 10-50 kW are attainable. The highest pulse repetition rate is determined by the driver motor revolution and the electrode number of MER-SGS. Even higher voltage and energy can be switched by adjusting the gas pressure or employing N(2) as the insulation gas or enlarging the size of MER-SGS to guarantee enough insulation level.

  7. Electro-optic high voltage sensor

    DOEpatents

    Davidson, James R.; Seifert, Gary D.

    2003-09-16

    A small sized electro-optic voltage sensor capable of accurate measurement of high voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation. A polarization beam displacer separates the input beam into two beams with orthogonal linear polarizations and causes one linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels effect elliptically polarizes the beam as it travels through the crystal. A reflector redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization. The system may include a detector for converting the output beams into electrical signals and a signal processor for determining the voltage based on an analysis of the output beams.

  8. BANSHEE: High-voltage repetitively pulsed electron-beam driver

    SciTech Connect

    VanHaaften, F.

    1992-01-01

    BANSHEE (Beam Accelerator for a New Source of High-Energy Electrons) this is a high-voltage modulator is used to produce a high-current relativistic electron beam for high-power microwave tube development. The goal of the BANSHEE research is first to achieve a voltage pulse of 700--750 kV with a 1-{mu}s pulse width driving a load of {approximately}100 {Omega}, the pulse repetition frequency (PRF) of a few hertz. The ensuing goal is to increase the pulse amplitude to a level approaching 1 MV. We conducted tests using half the modulator with an output load of 200 {Omega}, up to a level of {approximately}650 kV at a PRF of 1 Hz and 525 kV at a PRF of 5 Hz. We then conducted additional testing using the complete system driving a load of {approximately}100 {Omega}.

  9. BANSHEE: High-voltage repetitively pulsed electron-beam driver

    SciTech Connect

    VanHaaften, F.

    1992-08-01

    BANSHEE (Beam Accelerator for a New Source of High-Energy Electrons) this is a high-voltage modulator is used to produce a high-current relativistic electron beam for high-power microwave tube development. The goal of the BANSHEE research is first to achieve a voltage pulse of 700--750 kV with a 1-{mu}s pulse width driving a load of {approximately}100 {Omega}, the pulse repetition frequency (PRF) of a few hertz. The ensuing goal is to increase the pulse amplitude to a level approaching 1 MV. We conducted tests using half the modulator with an output load of 200 {Omega}, up to a level of {approximately}650 kV at a PRF of 1 Hz and 525 kV at a PRF of 5 Hz. We then conducted additional testing using the complete system driving a load of {approximately}100 {Omega}.

  10. Design and realization of high voltage disconnector condition monitoring system

    NASA Astrophysics Data System (ADS)

    Shi, Jinrui; Xu, Tianyang; Yang, Shuixian; Li, Buoyang

    2017-08-01

    The operation status of the high voltage disconnector directly affects the safe and stable operation of the power system. This article uses the wireless frequency hopping communication technology of the communication module to achieve the temperature acquisition of the switch contacts and high voltage bus, to introduce the current value of the loop in ECS, and judge the operation status of the disconnector by considering the ambient temperature, calculating the temperature rise; And through the acquisition of the current of drive motor in the process of switch closing and opening, and fault diagnosis of the disconnector by analyzing the change rule of the drive motor current, the condition monitoring of the high voltage disconnector is realized.

  11. High voltage testing for the Majorana Demonstrator

    SciTech Connect

    Abgrall, N.; Arnquist, Isaac J.; Avignone, F. T.; Barabash, A.; Bertrand, F.; Bradley, A. W.; Brudanin, V.; Busch, Matthew; Buuck, M.; Byram, D.; Caldwell, A. S.; Chan, Yuen-Dat; Christofferson, C. D.; Chu, Pamela M.; Cuesta, C.; Detwiler, Jason A.; Doe, P. J.; Dunagan, C.; Efremenko, Yuri; Ejiri, H.; Elliott, S. R.; Fu, Z.; Galindo-Uribarri, A.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I.; Guiseppe, V. E.; Henning, R.; Hoppe, Eric W.; Howard, S.; Howe, M. A.; Jasinski, B. R.; Keeter, K.; Kidd, M. F.; Konovalov, S.; Kouzes, Richard T.; Laferriere, Brian D.; Leon, Jonathan D.; Li, Alexander D.; MacMullin, J.; Martin, R. D.; Massarcyk, R.; Meijer, S. J.; Mertens, S.; Orrell, John L.; O'Shaughnessy, C.; Poon, Alan W.; Radford, D. C.; Rager, J.; Rielage, Keith; Robertson, R. G. H.; Romero Romo, M.; Shanks, B.; Shirchenko, M.; Snyder, N.; Suriano, Anne-Marie E.; Tedeschi, D.; Thompson, Andrew; Ton, K. T.; Trimble, J. E.; Varner, R. L.; Vasilyev, Sergey; Vetter, Kai; Vorren, Kris R.; White, Brandon R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, Chang-Hong; Yumatov, V.

    2016-07-01

    The Majorana Collaboration is constructing theMajorana Demonstrator, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in 76Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of theMajorana Demonstrator. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of the high-voltage path, including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the Majorana Demonstrator was characterized and the micro-discharge effects during theMajorana Demonstrator commissioning phase were studied. A stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.

  12. High voltage testing for the MAJORANA DEMONSTRATOR

    NASA Astrophysics Data System (ADS)

    Abgrall, N.; Arnquist, I. J.; Avignone, F. T.; Barabash, A. S.; Bertrand, F. E.; Bradley, A. W.; Brudanin, V.; Busch, M.; Buuck, M.; Byram, D.; Caldwell, A. S.; Chan, Y.-D.; Christofferson, C. D.; Chu, P.-H.; Cuesta, C.; Detwiler, J. A.; Doe, P. J.; Dunagan, C.; Efremenko, Yu.; Ejiri, H.; Elliott, S. R.; Fu, Z.; Galindo-Uribarri, A.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Henning, R.; Hoppe, E. W.; Howard, S.; Howe, M. A.; Jasinski, B. R.; Keeter, K. J.; Kidd, M. F.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; Li, A.; MacMullin, J.; Martin, R. D.; Massarczyk, R.; Meijer, S. J.; Mertens, S.; Orrell, J. L.; O'Shaughnessy, C.; Poon, A. W. P.; Radford, D. C.; Rager, J.; Rielage, K.; Robertson, R. G. H.; Romero-Romero, E.; Shanks, B.; Shirchenko, M.; Snyder, N.; Suriano, A. M.; Tedeschi, D.; Thompson, A.; Ton, K. T.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, C.-H.; Yumatov, V.

    2016-07-01

    The MAJORANA Collaboration is constructing the MAJORANA DEMONSTRATOR, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in 76Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of the MAJORANA DEMONSTRATOR. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of the high-voltage path, including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the MAJORANA DEMONSTRATOR was characterized and the micro-discharge effects during the MAJORANA DEMONSTRATOR commissioning phase were studied. A stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.

  13. High voltage testing for the Majorana Demonstrator

    DOE PAGES

    Abgrall, N.; Arnquist, I. J.; Avignone, III, F. T.; ...

    2016-04-04

    The Majorana Collaboration is constructing the Majorana Demonstrator, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in 76Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of the Majorana Demonstrator. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of themore » high-voltage path, including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the Majorana Demonstrator was characterized and the micro-discharge effects during the Majorana Demonstrator commissioning phase were studied. Furthermore, a stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.« less

  14. High voltage testing for the Majorana Demonstrator

    SciTech Connect

    Abgrall, N.; Arnquist, I. J.; Avignone, III, F. T.; Barabash, A. S.; Bertrand, F. E.; Bradley, A. W.; Brudanin, V.; Busch, M.; Buuck, M.; Byram, D.; Caldwell, A. S.; Chan, Y. -D.; Christofferson, C. D.; Chu, P. -H.; Cuesta, C.; Detwiler, J. A.; Doe, P. J.; Dunagan, C.; Efremenko, Yu.; Ejiri, H.; Elliot, S. R.; Fu, Z.; Galindo-Uribarri, A.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Henning, R.; Hoppe, E. W.; Howard, S.; Howe, M. A.; Jasinski, B. R.; Keeter, K. J.; Kidd, M. F.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; Li, A.; MacMullin, J.; Martin, R. D.; Massarczyk, R.; Meijer, S. J.; Mertens, S.; Orrell, J. L.; O'Shaughnessy, C.; Poon, A. W. P.; Radford, D. C.; Rager, J.; Rielage, K.; Robertson, R. G. H.; Romero-Romero, E.; Shanks, B.; Shirchenko, M.; Snyder, N.; Suriano, A. M.; Tedeschi, D.; Thompson, A.; Ton, K. T.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, C. -H.; Yumatov, V.

    2016-04-04

    The Majorana Collaboration is constructing the Majorana Demonstrator, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in 76Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of the Majorana Demonstrator. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of the high-voltage path, including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the Majorana Demonstrator was characterized and the micro-discharge effects during the Majorana Demonstrator commissioning phase were studied. Furthermore, a stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.

  15. Compact high voltage solid state switch

    DOEpatents

    Glidden, Steven C.

    2003-09-23

    A compact, solid state, high voltage switch capable of high conduction current with a high rate of current risetime (high di/dt) that can be used to replace thyratrons in existing and new applications. The switch has multiple thyristors packaged in a single enclosure. Each thyristor has its own gate drive circuit that circuit obtains its energy from the energy that is being switched in the main circuit. The gate drives are triggered with a low voltage, low current pulse isolated by a small inexpensive transformer. The gate circuits can also be triggered with an optical signal, eliminating the trigger transformer altogether. This approach makes it easier to connect many thyristors in series to obtain the hold off voltages of greater than 80 kV.

  16. High-Voltage Isolation Transformer

    NASA Technical Reports Server (NTRS)

    Clatterbuck, C. H.; Ruitberg, A. P.

    1985-01-01

    Arcing and field-included surface erosion reduced by electrostatic shields around windings and ferromagnetic core of 80-kilovolt isolation transformer. Fabricated from high-resistivity polyurethane-based material brushed on critical surfaces, shields maintained at approximately half potential difference of windings.

  17. Capabilities of the High Voltage Stress Test System at the Outdoor Test Facility

    SciTech Connect

    del Cueto, J. A.; Trudell, D.; Sekulic, W.

    2005-11-01

    We illustrate the capabilities of the High Voltage Stress Test (HVST) which operates continuously in the array field east of the Outdoor Test Facility at the National Renewable Energy Laboratory. Because we know that photovoltaic (PV) modules generating electrical power in both residential and utility-scale array installations will develop high-voltage biases approaching 600 VDC and 1,000 VDC, respectively, we expect such high voltages will result in current leakage between cells and ground, typically through the frames or mounts. We know that inevitably such leakage currents are capable of producing electrochemical corrosion that adversely impacts long-term module performance. With the HVST, we stress or operate PV modules under high-voltage bias, to characterize their leakage currents under all prevailing ambient conditions and assess performance changes emanating from high-voltage stress. We perform this test both on single modules and an active array.

  18. High Voltage Flux Compression Generators

    DTIC Science & Technology

    2008-04-02

    the generator: the armature radial expansion speed, the high explosive (HE) detonation speed, and the armature-stator helical contact speed. Clearly... detonation speeds, which are also the speed at which the self-similar expanding armature cone moves axially, are on the order of 8 to 9 mm/μs...product of detonation speed and the ratio of stator underside circumference to pitch, ( )prvv sc π2Δ= rr . For a typical circumference-to-pitch ratio

  19. High Voltage Water Breakdown Studies

    DTIC Science & Technology

    1998-01-01

    Terman [20] gives the following equation for a rectangle that has sides that are S1 by S2 and is made up of a rectangular bar that is b by c, L = 0.02339...Dielectrics," Proc. Tenth IEEE Pulsed Power Confer- ence, June, 1995, p. 574. (UNCLASSIFIED) 86 (20) Terman , F. E., Radio Engineers’ Handbook, McGraw-Hill Book...34 Conference Rec- ord, Eighth International Conference on Conduction and Breakdown in Dielectric Liquids, pp. 176-179, July, 1984. Lewis , T. J., High

  20. MEMS microswitch for high-voltage applications.

    SciTech Connect

    Strong, Fabian Wilbur

    2004-07-01

    A microswitch utilizing thermoelectric MEMS actuators is being designed, fabricated, and characterized. The switch is intended to switch >1000 VDC with over 100 gigaohms off-state resistance. The main challenge in designing these switches is determining a contact electrode configuration with the ability to stand off high voltages, while still being able to bridge the contact gap using MEMS actuators. Extensive high voltage breakdown testing has confirmed that the breakdown response for planar MEMS polysilicon devices is similar to the published response of larger metal electrodes across single small air gaps (0.5 to 10 um). Investigations of breakdown response in planar electrode configurations with multiple gaps show promising results for high voltage switching.

  1. High-voltage electrocution causing bulbar dysfunction

    PubMed Central

    Parvathy, G.; Shaji, C. V.; Kabeer, K. A.; Prasanth, S. R.

    2016-01-01

    Electrical shock can result in neurological complications, involving both peripheral and central nervous systems, which may present immediately or later on. High-voltage electrical injuries are uncommonly reported and may predispose to both immediate and delayed neurologic complications. We report the case of a 68-year-old man who experienced a high-voltage electrocution injury, subsequently developed bulbar dysfunction and spontaneously recovered. We describe the development of bulbar palsy following a significant electrical injury, which showed no evidence of this on magnetic resonance imaging. High-voltage electrocution injuries are a serious problem with potential for both immediate and delayed neurologic sequelae. The existing literature has no reports on bulbar dysfunction following electrocution, apart from motor neuron disease. PMID:27365968

  2. Time and voltage dependences of nanoscale dielectric constant modulation on indium tin oxide films

    NASA Astrophysics Data System (ADS)

    Li, Liang; Hao, Haoyue; Zhao, Hua

    2017-01-01

    The modulation of indium tin oxide (ITO) films through surface charge accumulation plays an important role in many different applications. In order to elaborately study the modulation, we measured the dielectric constant of the modulated layer through examining the excitation of surface plasmon polaritons. Charges were pumped on the surfaces of ITO films through applying high voltage in appropriate directions. Experiments unveiled that the dielectric constant of the modulated layer had large variation along with the nanoscale charge accumulation. Corresponding numerical results were worked out through combining Drude model and Mayadas-Shatzkes model. Based on the above results, we deduced the time and voltage dependences of accumulated charge density, which revealed a long-time charge accumulation process.

  3. Modulation of voltage-gated sodium channels hyperpolarizes the voltage threshold for activation in spinal motoneurones.

    PubMed

    Power, Kevin E; Carlin, Kevin P; Fedirchuk, Brent

    2012-03-01

    Previous work has shown that motoneurone excitability is enhanced by a hyperpolarization of the membrane potential at which an action potential is initiated (V(th)) at the onset, and throughout brainstem-evoked fictive locomotion in the adult decerebrate cat and neonatal rat. Modeling work has suggested the modulation of Na(+) conductance as a putative mechanism underlying this state-dependent change in excitability. This study sought to determine whether modulation of voltage-gated sodium channels could induce V(th) hyperpolarization. Whole-cell patch-clamp recordings were made from antidromically identified lumbar spinal motoneurones in an isolated neonatal rat spinal cord preparation. Recordings were made with and without the bath application of veratridine, a plant alkaloid neurotoxin that acts as a sodium channel modulator. As seen in HEK 293 cells expressing Nav1.2 channels, veratridine-modified channels demonstrated a hyperpolarizing shift in their voltage-dependence of activation and a slowing of inactivation that resulted in an enhanced inward current in response to voltage ramp stimulations. In the native rat motoneurones, veratridine-modified sodium channels induced a hyperpolarization of V(th) in all 29 neonatal rat motoneurones examined (mean hyperpolarization: -6.6 ± 4.3 mV). V(th) hyperpolarization was not due to the effects on Ca(2+) and/or K(+) channels as blockade of these currents did not alter V(th). Veratridine also significantly increased the amplitude of persistent inward currents (PICs; mean increase: 72.5 ± 98.5 pA) evoked in response to slow depolarizing current ramps. However, the enhancement of the PIC amplitude had a slower time course than the hyperpolarization of V(th), and the PIC onset voltage could be either depolarized or hyperpolarized, suggesting that PIC facilitation did not mediate the V(th) hyperpolarization. We therefore suggest that central neuronal circuitry in mammals could affect V(th) in a mechanism similar to that of

  4. Dynamic displacement measurement based on triangle phase modulation without preliminary measurement of half-wave voltage for phase modulator

    NASA Astrophysics Data System (ADS)

    Tanaka, Yosuke; Kimura, Ryosuke; Ito, Takamasa; Kurokawa, Takashi

    2017-04-01

    This paper presents an improved method for our recently proposed dynamic displacement measurement based on triangle phase modulation. The use of deep phase modulation eliminates the need for preliminary measurement of half-wave voltage V π for the phase modulator. We demonstrate displacement measurement with tens-of-nanometer scale taking place within a few micro seconds, where the temporal resolution is 33 ns. A long-term stability is also realized by employing a simple feedback control for the interferometer. The measurement precision is proved to be as high as that in the previously developed system that required careful preliminary measurement of V π .

  5. Voltage-sensing phosphatase modulation by a C2 domain.

    PubMed

    Castle, Paul M; Zolman, Kevin D; Kohout, Susy C

    2015-01-01

    The voltage-sensing phosphatase (VSP) is the first example of an enzyme controlled by changes in membrane potential. VSP has four distinct regions: the transmembrane voltage-sensing domain (VSD), the inter-domain linker, the cytosolic catalytic domain, and the C2 domain. The VSD transmits the changes in membrane potential through the inter-domain linker activating the catalytic domain which then dephosphorylates phosphatidylinositol phosphate (PIP) lipids. The role of the C2, however, has not been established. In this study, we explore two possible roles for the C2: catalysis and membrane-binding. The Ci-VSP crystal structures show that the C2 residue Y522 lines the active site suggesting a contribution to catalysis. When we mutated Y522 to phenylalanine, we found a shift in the voltage dependence of activity. This suggests hydrogen bonding as a mechanism of action. Going one step further, when we deleted the entire C2 domain, we found voltage-dependent enzyme activity was no longer detectable. This result clearly indicates the entire C2 is necessary for catalysis as well as for modulating activity. As C2s are known membrane-binding domains, we tested whether the VSP C2 interacts with the membrane. We probed a cluster of four positively charged residues lining the top of the C2 and suggested by previous studies to interact with phosphatidylinositol 4,5-bisphosphate [PI(4,5)P2] (Kalli et al., 2014). Neutralizing those positive charges significantly shifted the voltage dependence of activity to higher voltages. We tested membrane binding by depleting PI(4,5)P2 from the membrane using the 5HT2C receptor and found that the VSD motions as measured by voltage clamp fluorometry (VCF) were not changed. These results suggest that if the C2 domain interacts with the membrane to influence VSP function it may not occur exclusively through PI(4,5)P2. Together, this data advances our understanding of the VSP C2 by demonstrating a necessary and critical role for the C2 domain in

  6. Modulation linearization of a frequency-modulated voltage controlled oscillator, part 3

    NASA Technical Reports Server (NTRS)

    Honnell, M. A.

    1975-01-01

    An analysis is presented for the voltage versus frequency characteristics of a varactor modulated VHF voltage controlled oscillator in which the frequency deviation is linearized by using the nonlinear characteristics of a field effect transistor as a signal amplifier. The equations developed are used to calculate the oscillator output frequency in terms of pertinent circuit parameters. It is shown that the nonlinearity exponent of the FET has a pronounced influence on frequency deviation linearity, whereas the junction exponent of the varactor controls total frequency deviation for a given input signal. A design example for a 250 MHz frequency modulated oscillator is presented.

  7. Low (Sub-1-volt) halfwave voltage polymeric electro-optic modulators achieved by controlling chromophore shape

    PubMed

    Shi; Zhang; Zhang; Bechtel; Dalton; Robinson; Steier

    2000-04-07

    Electro-optic (EO) modulators encode electrical signals onto fiber optic transmissions. High drive voltages limit gain and noise levels. Typical polymeric and lithium niobate modulators operate with halfwave voltages of 5 volts. Sterically modified organic chromophores have been used to reduce the attenuation of electric field poling-induced electro-optic activity caused by strong intermolecular electrostatic interactions. Such modified chromophores, incorporated into polymer hosts, were used to fabricate EO modulators with halfwave voltages of 0.8 volts (at a telecommunications wavelength of 1318 nanometers) and to achieve a halfwave voltage-interaction length product of 2.2 volt-centimeters. Optical push-pull poling and driving were also used to reduce halfwave voltage. This study, together with recent demonstrations of exceptional bandwidths (more than 110 gigahertz) and ease of integration (with very large scale integration semiconductor circuitry and ultra-low-loss passive optical circuitry) demonstrates the potential of polymeric materials for next generation telecommunications, information processing, and radio frequency distribution.

  8. Modular high voltage power supply for chemical analysis

    DOEpatents

    Stamps, James F [Livermore, CA; Yee, Daniel D [Dublin, CA

    2010-05-04

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  9. Modular high voltage power supply for chemical analysis

    DOEpatents

    Stamps, James F.; Yee, Daniel D.

    2008-07-15

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  10. Modular high voltage power supply for chemical analysis

    DOEpatents

    Stamps, James F.; Yee, Daniel D.

    2007-01-09

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC--DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC--DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  11. Planar multijunction high voltage solar cells

    NASA Astrophysics Data System (ADS)

    Evans, J. C., Jr.; Chai, A. T.; Goradia, C.

    1980-01-01

    Technical considerations, preliminary results, and fabrication details are discussed for a family of high-voltage planar multi-junction (PMJ) solar cells which combine the attractive features of planar cells with conventional or interdigitated back contacts and the vertical multijunction (VMJ) solar cell. The PMJ solar cell is internally divided into many voltage-generating regions, called unit cells, which are internally connected in series. The key to obtaining reasonable performance from this device was the separation of top surface field regions over each active unit cell. Using existing solar cell fabricating methods, output voltages in excess of 20 volts per linear centimeter are possible. Analysis of the new device is complex, and numerous geometries are being studied which should provide substantial benefits in both normal sunlight usage as well as with concentrators.

  12. An Inexpensive Source of High Voltage

    ERIC Educational Resources Information Center

    Saraiva, Carlos

    2012-01-01

    As a physics teacher I like recycling old apparatus and using them for demonstrations in my classes. In physics laboratories in schools, sources of high voltage include induction coils or electronic systems that can be bought from companies that sell lab equipment. But these sources can be very expensive. In this article, I will explain how you…

  13. Recommended practices for encapsulating high voltage assemblies

    NASA Technical Reports Server (NTRS)

    Tankisley, E. W.

    1974-01-01

    Preparation and encapsulation of high voltage assemblies are considered. Related problems in encapsulating are brought out in these instructions. A test sampling of four frequently used encapsulating compounds is shown in table form. The purpose of this table is to give a general idea of the working time available and the size of the container required for mixing and de-aerating.

  14. An Inexpensive Source of High Voltage

    ERIC Educational Resources Information Center

    Saraiva, Carlos

    2012-01-01

    As a physics teacher I like recycling old apparatus and using them for demonstrations in my classes. In physics laboratories in schools, sources of high voltage include induction coils or electronic systems that can be bought from companies that sell lab equipment. But these sources can be very expensive. In this article, I will explain how you…

  15. High Voltage Piezoelectric System for Generating Neutrons

    DTIC Science & Technology

    2013-06-01

    Piezoelectric transformer structural modeling - a review,” Ultrasonics , Ferroelectrics and Frequency Control, IEEE Transactions on, vol. 54, pp...1 High Voltage Piezoelectric System for Generating Neutrons Brady Gall, Student Member, IEEE, Scott D. Kovaleski, Senior Member, IEEE, James A...Compact electrical neutron generators are a desir- able alternative to radioisotope neutron sources. A piezoelectric transformer system is presented

  16. Module Seven: Combination Circuits and Voltage Dividers; Basic Electricity and Electronics Individualized Learning System.

    ERIC Educational Resources Information Center

    Bureau of Naval Personnel, Washington, DC.

    In this module the student will learn to apply the rules previously learned for series and parallel circuits to more complex circuits called series-parallel circuits, discover the utility of a common reference when making reference to voltage values, and learn how to obtain a required voltage from a voltage divider network. The module is divided…

  17. 30 CFR 77.810 - High-voltage equipment; grounding.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage equipment; grounding. 77.810... COAL MINES Surface High-Voltage Distribution § 77.810 High-voltage equipment; grounding. Frames, supporting structures, and enclosures of stationary, portable, or mobile high-voltage equipment shall...

  18. Low Voltage, High Speed & High Contrast Electrooptical Thin Film Devices for Free Space Optical Interconnects

    DTIC Science & Technology

    2007-11-02

    Space Optical Interconnects (FSOI) for future ultra fast computing /communications systems. Fabry - Perot thin film Electrooptic(EO) modulators (STFP...low modulation voltages.This is enabled by Fabry - Perot (F-P) etalons of the EO film as modulators either in the reflection or transmission mode. In...Tuning’ of a F-P EOLM with respect to thickness variation for high extinction ratios. Demonstration of ’proof-of concept’ of a ’Self Tuned Fabry - Perot

  19. Fiber optic current monitor for high-voltage applications

    DOEpatents

    Renda, George F.

    1992-01-01

    A current monitor which derives its power from the conductor being measured for bidirectionally measuring the magnitude of current (from DC to above 50 khz) flowing through a conductor across which a relatively high level DC voltage is applied, includes a pair of identical transmitter modules connected in opposite polarity to one another in series with the conductor being monitored, for producing from one module a first light signal having an intensity directly proportional to the magnitude of current flowing in one direction through the conductor during one period of time, and from the other module a second light signal having an intensity directly proportional to the magnitude of current flowing in the opposite direction through the conductor during another period of time, and a receiver located in a safe area remote from the high voltage area for receiving the first and second light signals, and converting the same to first and second voltage signals having levels indicative of the magnitude of current being measured at a given time.

  20. Fiber optic current monitor for high-voltage applications

    DOEpatents

    Renda, G.F.

    1992-04-21

    A current monitor which derives its power from the conductor being measured for bidirectionally measuring the magnitude of current (from DC to above 50 khz) flowing through a conductor across which a relatively high level DC voltage is applied, includes a pair of identical transmitter modules connected in opposite polarity to one another in series with the conductor being monitored, for producing from one module a first light signal having an intensity directly proportional to the magnitude of current flowing in one direction through the conductor during one period of time, and from the other module a second light signal having an intensity directly proportional to the magnitude of current flowing in the opposite direction through the conductor during another period of time, and a receiver located in a safe area remote from the high voltage area for receiving the first and second light signals, and converting the same to first and second voltage signals having levels indicative of the magnitude of current being measured at a given time. 6 figs.

  1. High voltage pulse generator. [Patent application

    DOEpatents

    Fasching, G.E.

    1975-06-12

    An improved high-voltage pulse generator is described which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of the first rectifier connected between the first and second capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. The output voltage can be readily increased by adding additional charging networks. The circuit allows the peak level of the output to be easily varied over a wide range by using a variable autotransformer in the charging circuit.

  2. 30 CFR 75.804 - Underground high-voltage cables.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Underground high-voltage cables. 75.804 Section... § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance... cables shall be adequate for the intended current and voltage. Splices made in such cables shall provide...

  3. 30 CFR 75.804 - Underground high-voltage cables.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Underground high-voltage cables. 75.804 Section... § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance... cables shall be adequate for the intended current and voltage. Splices made in such cables shall provide...

  4. 30 CFR 75.804 - Underground high-voltage cables.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Underground high-voltage cables. 75.804 Section... § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance... cables shall be adequate for the intended current and voltage. Splices made in such cables shall provide...

  5. 30 CFR 75.804 - Underground high-voltage cables.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Underground high-voltage cables. 75.804 Section... § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance... cables shall be adequate for the intended current and voltage. Splices made in such cables shall provide...

  6. 30 CFR 75.804 - Underground high-voltage cables.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Underground high-voltage cables. 75.804 Section... § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance... cables shall be adequate for the intended current and voltage. Splices made in such cables shall provide...

  7. Voltage-current and voltage-flux characteristics of asymmetric high TC DC SQUIDs

    NASA Astrophysics Data System (ADS)

    Novikov, I. L.; Greenberg, Ya. S.; Schultze, V.; Ijsselsteijn, R.; Meyer, H.-G.

    2009-01-01

    We report measurements of transfer functions and flux shifts of 20 on-chip high TC DC SQUIDs half of which were made purposely geometrically asymmetric. All of these SQUIDs were fabricated using standard high TC thin-film technology and they were single layer ones, having 140 nm thickness of YBa 2Cu 3O 7- x film deposited by laser ablation onto MgO bicrystal substrates with 24° misorientation angle. For every SQUID the parameters of its intrinsic asymmetry, i.e., the density of critical current and resistivity of every junction, were measured directly and independently. We showed that the main reason for the on-chip spreading of SQUIDs’ voltage-current and voltage-flux characteristics was the intrinsic asymmetry. We found that for SQUIDs with a relative large inductance ( L > 120 pH) both the voltage modulation and the transfer function were not very sensitive to the junctions asymmetry, whereas SQUIDs with smaller inductance ( L ≃ 65-75 pH) were more sensitive. The results obtained in the paper are important for the implementation in the sensitive instruments based on high TC SQUID arrays and gratings.

  8. High voltage source control on FODS

    NASA Astrophysics Data System (ADS)

    Patalakha, D. I.; Kalinin, A. Yu; Kulagin, N. V.

    2017-01-01

    The implementation of the high voltage power supply control system (HVPSCS) for experimental setup FODS (FOcusing Doublearmed Spectrometer) at accelerator U-70 of the Federal State Budgetary Institution State Research Center Of Russia Institute for High Energy Physics of the National Research Centre “Kurchatov Institute” (hereinafter referred to as IHEP) or for the test bench of the detector components is considered. The required set of hardware is defined and the appropriate software to operate HVPSCS is written in C/C++ codes. The date acquisition (DAQ) system [1] makes automatic control on HVPSCS for data taking run. It allows to get the dependence of appropriate detector parameters on the high voltage supply values and choose its optimal values for FODS detectors. The test run results of HVPSCS are presented.

  9. Background information on high voltage fields.

    PubMed Central

    Janes, D E

    1977-01-01

    The increased demand for power has led to higher voltages for overhead transmission lines. Environmentalists, governmental agencies, and some members of the scientific community have questioned if past biological effects research and experience with lower voltage lines provide adequate bases for predicting the possible health and environmental effects of the higher voltage lines. Only a small amount of work has been done to explore the possible effects, especially long term effects, of the exposure of biological systems to electric fields from transmission lines. Research in Western Europe and the United States has not identified any prompt or acute effects other than spark and electric discharge and no permanent effects. Contrasted with this are the studies of workers in Soviet and Spanish high voltage switchyards that report effects, such as excitability, headaches, drowsiness, fatique, and nausea, that are not found in Soviet line maintenance workers. The results of current and planned research, supported by both U.S. Government agencies and the private sector, should resolve a number of the present uncertanties and provide answers for the many questions concerning potential effects. PMID:598346

  10. High-Voltage Droplet Dispenser Developed

    NASA Technical Reports Server (NTRS)

    Eichenberg, Dennis J.; VanderWal, Randy L.

    2001-01-01

    Various techniques have been applied to deploying individual droplets for many applications, such as the study of the combustion of liquid fuels. Isolated droplet studies are useful in that they allow phenomena to be studied under well-controlled and simplified conditions. A high-voltage droplet dispenser has been developed that is extremely effective in dispensing a wide range of droplets. The dispenser is quite unique in that it utilizes a droplet bias voltage, as well as an ionization pulse, to release the droplet. The droplet is deployed from the end of a needle. A flat-tipped, stainless steel needle attached to a syringe dispenses a known value of liquid that hangs on the needle tip. Somewhat below the droplet is an annular ring electrode. A bias voltage, followed by a voltage pulse, is applied to attract the droplet sufficiently to pull it off the needle. The droplet and needle are oppositely charged relative to the annular electrode. The needle is negatively charged, and the annular ring is positively charged.

  11. High Voltage Design Guidelines: A Timely Update

    NASA Technical Reports Server (NTRS)

    Hillard, G. Barry; Kirkici, H.; Ensworth, Clint (Technical Monitor)

    2001-01-01

    The evolving state of high voltage systems and their increasing use in the space program have called for a revision of the High Voltage Design Guidelines, Marshall Space Flight Center technical document MSFC-STD-531, originally issued September 1978 (previously 50 M05189b, October 1972). These guidelines deal in depth with issues relating to the specification of materials, particularly electrical insulation, as well as design practices and test methods. Emphasis is on corona and Paschen breakdown as well as plasma effects for Low Earth Orbiting systems. We will briefly review the history of these guidelines as well as their immediate predecessors and discuss their range of applicability. In addition, this document has served as the basis for several derived works that became focused, program-specific HV guidelines. We will briefly review two examples, guidelines prepared for the X-33 program and for the Space Shuttle Electric Auxiliary Power Unit (EAPU) upgrade.

  12. An Inexpensive Source of High Voltage

    NASA Astrophysics Data System (ADS)

    Saraiva, Carlos

    2012-04-01

    As a physics teacher I like recycling old apparatus and using them for demonstrations in my classes.1-4 In physics laboratories in schools, sources of high voltage include induction coils or electronic systems that can be bought from companies that sell lab equipment. But these sources can be very expensive. In this article, I will explain how you can use a car ignition coil as a high voltage source. Such a coil can be obtained from an old car found in a car salvage yard and used to power cathode ray tubes and discharge tubes to observe the spectra. It can also be used as a source of ignition to simulate explosive combustion that occurs in car engines, rockets, etc. You can also buy these coils in shops that sell car accessories and they are cheaper than induction coils. In Fig. 1 you can see a coil that I used.

  13. High voltage system: Plasma interaction summary

    NASA Technical Reports Server (NTRS)

    Stevens, N. John

    1986-01-01

    The possible interactions that could exist between a high voltage system and the space plasma environment are reviewed. A solar array is used as an example of such a system. The emphasis in this review is on the discrepancies that exist in this technology in both flight and ground experiment data. It has been found that, in ground testing, there are facility effects, cell size effects and area scaling uncertainties. For space applications there are area scaling and discharge concerns for an array as well as the influence of the large space structures on the collection process. There are still considerable uncertainties in the high voltage-space plasma interaction technology even after several years of effort.

  14. 76 FR 70721 - Voltage Coordination on High Voltage Grids; Notice of Staff Workshop

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-15

    ... Energy Regulatory Commission Voltage Coordination on High Voltage Grids; Notice of Staff Workshop Take notice that the Federal Energy Regulatory Commission will hold a Workshop on Voltage Coordination on High... improve coordination and optimization of transfer capability across the Bulk-Power System from a...

  15. High voltage spark carbon fiber detection system

    NASA Technical Reports Server (NTRS)

    Yang, L. C.

    1980-01-01

    The pulse discharge technique was used to determine the length and density of carbon fibers released from fiber composite materials during a fire or aircraft accident. Specifications are given for the system which uses the ability of a carbon fiber to initiate spark discharge across a high voltage biased grid to achieve accurate counting and sizing of fibers. The design of the system was optimized, and prototype hardware proved satisfactory in laboratory and field tests.

  16. High-voltage power supply system for detecting equipment of DSS experiment at JINR Nuclotron

    NASA Astrophysics Data System (ADS)

    Piyadin, S. M.; Ladygin, V. P.; Pilyar, A. V.; Reznikov, S. G.; Janek, M.

    2017-01-01

    The eight-channel high-voltage power supply system based on using the Wenzel Elektronik N1130 module is described. The characteristics of 8DAC-12 and 8ADC-14 types control modules of CAMAC standard designed for high-voltage systems are presented. This system was successfully used to provide the power supply of scintillation detectors in the experiments on the study of the structure of light nuclei at JINR Nuclotron.

  17. High voltage electric substation performance in earthquakes

    SciTech Connect

    Eidinger, J.; Ostrom, D.; Matsuda, E.

    1995-12-31

    This paper examines the performance of several types of high voltage substation equipment in past earthquakes. Damage data is provided in chart form. This data is then developed into a tool for estimating the performance of a substation subjected to an earthquake. First, suggests are made about the development of equipment class fragility curves that represent the expected earthquake performance of different voltages and types of equipment. Second, suggestions are made about how damage to individual pieces of equipment at a substation likely affects the post-earthquake performance of the substation as a whole. Finally, estimates are provided as to how quickly a substation, at various levels of damage, can be restored to operational service after the earthquake.

  18. Helix O modulates voltage dependency of CLC-1.

    PubMed

    Seong, Ju Yong; Ha, Kotdaji; Hong, Chansik; Myeong, Jongyun; Lim, Hyun-Ho; Yang, Dongki; So, Insuk

    2017-02-01

    The chloride channel (CLC) family of proteins consists of channels and transporters that share similarities in architecture and play essential roles in physiological functions. Among the CLC family, CLC-1 channels have the representative homodimeric double-barreled structure carrying two gating processes. One is protopore gating that acts on each pore independently by glutamate residue (Eext). The other is common gating that closes both pores simultaneously in association with large conformational changes across each subunit. In skeletal muscle, CLC-1 is associated with maintaining normal sarcolemmal excitability, and a number of myotonic mutants were reported to modify the channel gating of CLC-1. In this study, we characterized highly conserved helix O as a key determinant of structural stability in CLC-1. Supporting this hypothesis, myotonic mutant (G523D) at N-terminal of helix O showed the activation at hyperpolarizing membrane potentials with a reversed voltage dependency. However, introducing glutamate at serine residue (S537) at the C-terminal of the helix O on G523D restored WT-like voltage dependency of the common gate and showed proton insensitive voltage dependency. To further validate this significant site, site-specific mutagenesis experiments was performed on V292 that is highly conserved as glutamate in antiporter and closely located to S537 and showed that this area is essential for channel function. Taken together, the results of our study suggest the importance of helix O as the main contributor for stable structure of evolutionary conserved CLC proteins and its key role in voltage dependency of the CLC-1. Furthermore, the C-terminal of the helix O can offer a clue for possible proton involvement in CLC-1 channel.

  19. Polyurethane foam application for high voltage insulation

    NASA Astrophysics Data System (ADS)

    Argin, Mehmet

    Polyurethane foams have been in use for decades by the industry. The use of polyurethane foams is common in low voltage switchgears, but few applications are reported in medium and high-voltage (HV) systems. At high voltages, sulfur hexafluoride (SF6) and/or nitrogen (N2) is applied in hollow insulation systems like Optical Instrument Transformers (OIT) to avoid internal flashover. Firmly sealing these gases within the insulating system over a long period of time as well as over variable temperatures is difficult. As a result of this sealing problem, gas pressure drops, moisture may penetrate into the insulation medium, and the dielectric strength of the insulation system decreases. This work proposes the use of polyurethane foams to fill the hollow spaces in insulation systems. Much of the research effort focused on the demonstration of the dielectric strength of three different foams which are investigated using alternating current (AC) and lightning impulse voltages under different humidity and temperature conditions. It is shown that polyurethane foams have 2-3 times better dielectric strength than air. The breakdown strength decreases with the thickness of the foam; temperature and humidity have negligible effects on the breakdown voltage. The foam breakdown stress depends on the void size and distribution. The high density foams, with smaller void diameters, have higher breakdown stress. As the breakdown mechanism within polyurethane foam was explained, a hypothesis was developed to describe the mechanism that leads to electrical breakdown of polyurethane foams. Partial discharge measurements revealed that electrical breakdown of polyurethane foam is not the result of progress of discharges in time, as in other polymeric materials; discharges are very low and increase immediately before breakdown, suddenly increasing the electric field and producing an avalanche. Therefore, the mechanism that leads to breakdown in polyurethane foam is an avalanche breakdown

  20. High voltage solar cell power generating system

    NASA Technical Reports Server (NTRS)

    Levy, E., Jr.; Opjorden, R. W.; Hoffman, A. C.

    1974-01-01

    A laboratory solar power system regulated by on-panel switches has been delivered for operating high power (3 kW), high voltage (15,000 volt) loads (communication tubes, ion thrusters). The modular system consists of 26 solar arrays, each with an integral light source and cooling system. A typical array contains 2,560 series-connected cells. Each light source consists of twenty 500-watt tungsten iodide lamps providing plus or minus 5 percent uniformity at one solar constant. An array temperature of less than 40 C is achieved using an infrared filter, a water-cooled plate, a vacuum hold-down system, and air flushing.

  1. Isolated Fast High-Voltage Switching Circuit

    NASA Technical Reports Server (NTRS)

    Rizzi, Anthony

    1992-01-01

    Electrically isolated switching circuit supplies pulses at potentials up to 6.5 kV and currents up to 6.5 A, lasting as long as few microseconds. Turn-on time about 40 ns; turn-off time about 3 microseconds. Electrically isolated from control circuitry by means of fiber-optic signal coupling and isolated power supply. Electrical isolation protects both technician and equipment. This and similar circuits useful in such industrial and scientific applications as high-voltage, high-frequency test equipment; electrostatic-discharge test equipment; plasma-laboratory instrumentation; spark chambers; and electromagnetic-interference test equipment.

  2. Ciguatoxins: Cyclic Polyether Modulators of Voltage-gated Iion Channel Function

    PubMed Central

    Nicholson, Graham M.; Lewis, Richard J.

    2006-01-01

    Ciguatoxins are cyclic polyether toxins, derived from marine dinoflagellates, which are responsible for the symptoms of ciguatera poisoning. Ingestion of tropical and subtropical fin fish contaminated by ciguatoxins results in an illness characterised by neurological, cardiovascular and gastrointestinal disorders. The pharmacology of ciguatoxins is characterised by their ability to cause persistent activation of voltage-gated sodium channels, to increase neuronal excitability and neurotransmitter release, to impair synaptic vesicle recycling, and to cause cell swelling. It is these effects, in combination with an action to block voltage-gated potassium channels at high doses, which are believed to underlie the complex of symptoms associated with ciguatera. This review examines the sources, structures and pharmacology of ciguatoxins. In particular, attention is placed on their cellular modes of actions to modulate voltage-gated ion channels and other Na+-dependent mechanisms in numerous cell types and to current approaches for detection and treatment of ciguatera.

  3. High voltage power supply with modular series resonant inverters

    DOEpatents

    Dreifuerst, G.R.; Merritt, B.T.

    1995-07-18

    A relatively small and compact high voltage, high current power supply for a laser utilizes a plurality of modules containing series resonant half bridge inverters. A pair of reverse conducting thyristors are incorporated in each series resonant inverter module such that the series resonant inverter modules are sequentially activated in phases 360{degree}/n apart, where n=number of modules for n>2. Selective activation of the modules allows precise output control reducing ripple and improving efficiency. Each series resonant half bridge inverter module includes a transformer which has a cooling manifold for actively circulating a coolant such as water, to cool the transformer core as well as selected circuit elements. Conductors connecting and forming various circuit components comprise hollow, electrically conductive tubes such as copper. Coolant circulates through the tubes to remove heat. The conductive tubes act as electrically conductive lines for connecting various components of the power supply. Where it is desired to make electrical isolation breaks, tubes comprised of insulating material such as nylon are used to provide insulation and continue the fluid circuit. 11 figs.

  4. High voltage power supply with modular series resonant inverters

    DOEpatents

    Dreifuerst, Gary R.; Merritt, Bernard T.

    1995-01-01

    A relatively small and compact high voltage, high current power supply for a laser utilizes a plurality of modules containing series resonant half bridge inverters. A pair of reverse conducting thyristors are incorporated in each series resonant inverter module such that the series resonant inverter modules are sequentially activated in phases 360.degree./n apart, where n=number of modules for n>2. Selective activation of the modules allows precise output control reducing ripple and improving efficiency. Each series resonant half bridge inverter module includes a transformer which has a cooling manifold for actively circulating a coolant such as water, to cool the transformer core as well as selected circuit elements. Conductors connecting and forming various circuit components comprise hollow, electrically conductive tubes such as copper. Coolant circulates through the tubes to remove heat. The conductive tubes act as electrically conductive lines for connecting various components of the power supply. Where it is desired to make electrical isolation breaks, tubes comprised of insulating material such as nylon are used to provide insulation and continue the fluid circuit.

  5. High Voltage in Noble Liquids for High Energy Physics

    SciTech Connect

    Rebel, B.; Bernard, E.; Faham, C. H.; Ito, T. M.; Lundberg, B.; Messina, M.; Monrabal, F.; Pereverzev, S. P.; Resnati, F.; Rowson, P. C.; Soderberg, M.; Strauss, T.; Tomas, A.; Va'vra, J.; Wang, H.

    2014-08-22

    A workshop was held at Fermilab November 8-9, 2013 to discuss the challenges of using high voltage in noble liquids. The participants spanned the fields of neutrino, dark matter, and electric dipole moment physics. All presentations at the workshop were made in plenary sessions. This document summarizes the experiences and lessons learned from experiments in these fields at developing high voltage systems in noble liquids.

  6. THE INFLUENCE OF DIETARY SODIUM MODULATION ON ELECTROCARDIOGRAPHIC VOLTAGE CRITERIA FOR LEFT VENTRICULAR HYPERTROPHY IN NORMOTENSIVE INDIVIDUALS

    PubMed Central

    Larson, Carol; Vaidya, Anand; Sun, Bei; Williams, Jonathan S.

    2011-01-01

    Objective Dietary sodium intake and left ventricular hypertrophy (LVH) on electrocardiogram (ECG) are both independent determinants of cardiovascular risk. Prior studies demonstrated that acute dietary sodium modulation significantly altered LVH-specific ECG voltage in hypertensives, thus modifying cardiovascular risk prediction; but whether this phenomenon exists in normotensive individuals is not known. We evaluated the influence of dietary sodium intake on ECG voltage and ECG criteria for LVH in normotensives. Methods Retrospective evaluation of ECG’s of healthy normotensives (n=39) who were prospectively randomized to a dietary study protocol of 1 week of high sodium (HS) diet (>200 mmol Na/day) and 1 week of low sodium (LS) diet (<10 mmol Na/day) was conducted. ECG voltage amplitudes and biochemical assessments were preformed at the end of each dietary intervention. Results As expected, blood pressure declined and measures of circulating renin-angiotensin-aldosterone system activity rose significantly with LS diet. No significant changes in specific LVH voltage criteria, or overall precordial or limb lead ECG voltage amplitudes, were detected between diets. Conclusion Although acute dietary sodium modulation has been shown to significantly alter LVH-specific ECG voltage and the detection of LVH in hypertensives, dietary sodium intake did not influence ECG voltage in normotensives. Healthy normotensive individuals may exhibit adaptive measures that dampen ECG voltage fluctuations in response to dietary sodium modulation. More specific cardiac imaging studies may provide additional insight into this observation and the influence of dietary sodium in cardiac health. PMID:22089249

  7. Characterization of Multicrystalline Silicon Modules with System Bias Voltage Applied in Damp Heat

    SciTech Connect

    Hacke, P.; Kempe, M.; Terwilliger, K.; Glick, S.; Call, N.; Johnston, S.; Kurtz, S.

    2011-07-01

    As it is considered economically favorable to serially connect modules to build arrays with high system voltage, it is necessary to explore potential long-term degradation mechanisms the modules may incur under such electrical potential. We performed accelerated lifetime testing of multicrystalline silicon PV modules in 85 degrees C/ 85% relative humidity and 45 degrees C/ 30% relative humidity while placing the active layer in either positive or negative 600 V bias with respect to the grounded module frame. Negative bias applied to the active layer in some cases leads to more rapid and catastrophic module power degradation. This is associated with significant shunting of individual cells as indicated by electroluminescence, thermal imaging, and I-V curves. Mass spectroscopy results support ion migration as one of the causes. Electrolytic corrosion is seen occurring with the silicon nitride antireflective coating and silver gridlines, and there is ionic transport of metallization at the encapsulant interface observed with damp heat and applied bias. Leakage current and module degradation is found to be highly dependent upon the module construction, with factors such as encapsulant and front glass resistivity affecting performance. Measured leakage currents range from about the same seen in published reports of modules deployed in Florida (USA) and is accelerated to up to 100 times higher in the environmental chamber testing.

  8. Gabapentin Modulates HCN4 Channel Voltage-Dependence

    PubMed Central

    Tae, Han-Shen; Smith, Kelly M.; Phillips, A. Marie; Boyle, Kieran A.; Li, Melody; Forster, Ian C.; Hatch, Robert J.; Richardson, Robert; Hughes, David I.; Graham, Brett A.; Petrou, Steven; Reid, Christopher A.

    2017-01-01

    Gabapentin (GBP) is widely used to treat epilepsy and neuropathic pain. There is evidence that GBP can act on hyperpolarization-activated cation (HCN) channel-mediated Ih in brain slice experiments. However, evidence showing that GBP directly modulates HCN channels is lacking. The effect of GBP was tested using two-electrode voltage clamp recordings from human HCN1, HCN2, and HCN4 channels expressed in Xenopus oocytes. Whole-cell recordings were also made from mouse spinal cord slices targeting either parvalbumin positive (PV+) or calretinin positive (CR+) inhibitory neurons. The effect of GBP on Ih was measured in each inhibitory neuron population. HCN4 expression was assessed in the spinal cord using immunohistochemistry. When applied to HCN4 channels, GBP (100 μM) caused a hyperpolarizing shift in the voltage of half activation (V1/2) thereby reducing the currents. Gabapentin had no impact on the V1/2 of HCN1 or HCN2 channels. There was a robust increase in the time to half activation for HCN4 channels with only a small increase noted for HCN1 channels. Gabapentin also caused a hyperpolarizing shift in the V1/2 of Ih measured from HCN4-expressing PV+ inhibitory neurons in the spinal dorsal horn. Gabapentin had minimal effect on Ih recorded from CR+ neurons. Consistent with this, immunohistochemical analysis revealed that the majority of CR+ inhibitory neurons do not express somatic HCN4 channels. In conclusion, GBP reduces HCN4 channel-mediated currents through a hyperpolarized shift in the V1/2. The HCN channel subtype selectivity of GBP provides a unique tool for investigating HCN4 channel function in the central nervous system. The HCN4 channel is a candidate molecular target for the acute analgesic and anticonvulsant actions of GBP. PMID:28871229

  9. High Voltage Design Guide. Volume IV. Aircraft

    DTIC Science & Technology

    1983-01-01

    Pressure In A Negative Point-Sph-,re Gap In Air 49 18. Dielectric Polarizations 53 19. Temperature Affects AC Dielectric Strength Of Type H Kapton Film 56 20...High Humidity Degrades The Dielectric Strength Of Type H Kapton Film 57 x LIST OF ILLUSTRATIONS (CONT.) FigureP 21. Insulation Thickness Affects...Dielectric Strength Of Type H Kapton Film 57 22. Film Area Vs. Dielectric Strength Of Type H Kapton Film 59 23. Life As A Function Of Voltage For Type H

  10. Safe epoxy encapsulant for high voltage magnetics

    SciTech Connect

    Sanchez, R.O.; Archer, W.E.

    1998-01-01

    This paper describes the use of Formula 456, an aliphatic amine cured epoxy for impregnating coils and high voltage transformers. Sandia has evaluated a number of MDA-free epoxy encapsulants which relied on either anhydride or other aromatic amine curing agents. The use of aliphatic amine curing agents was more recently evaluated and has resulted in the definition of Formula 456 resin. Methylene dianiline (MDA) has been used for more than 20 years as the curing agent for various epoxy formulations throughout the Department of Energy and much of industry. Sandia National Laboratories began the process of replacing MDA with other formulations because of regulations imposed by OSHA on the use of MDA. OSHA has regulated MDA because it is a suspect carcinogen. Typically the elimination of OSHA-regulated materials provides a rare opportunity to qualify new formulations in a range of demanding applications. It was important to take full advantage of that opportunity, although the associated materials qualification effort was costly. Small high voltage transformers are one of those demanding applications. The successful implementation of the new formulation for high reliability transformers will be described. The test results that demonstrate the parts are qualified for use in DOE weapon systems will be presented.

  11. High-Voltage, Asymmetric-Waveform Generator

    NASA Technical Reports Server (NTRS)

    Beegle, Luther W.; Duong, Tuan A.; Duong, Vu A.; Kanik, Isik

    2008-01-01

    The shapes of waveforms generated by commercially available analytical separation devices, such as some types of mass spectrometers and differential mobility spectrometers are, in general, inadequate and result in resolution degradation in output spectra. A waveform generator was designed that would be able to circumvent these shortcomings. It is capable of generating an asymmetric waveform, having a peak amplitude as large as 2 kV and frequency of several megahertz, which can be applied to a capacitive load. In the original intended application, the capacitive load would consist of the drift plates in a differential-mobility spectrometer. The main advantage to be gained by developing the proposed generator is that the shape of the waveform is made nearly optimum for various analytical devices requiring asymmetric-waveform such as differential-mobility spectrometers. In addition, this waveform generator could easily be adjusted to modify the waveform in accordance with changed operational requirements for differential-mobility spectrometers. The capacitive nature of the load is an important consideration in the design of the proposed waveform generator. For example, the design provision for shaping the output waveform is based partly on the principle that (1) the potential (V) on a capacitor is given by V=q/C, where C is the capacitance and q is the charge stored in the capacitor; and, hence (2) the rate of increase or decrease of the potential is similarly proportional to the charging or discharging current. The proposed waveform generator would comprise four functional blocks: a sine-wave generator, a buffer, a voltage shifter, and a high-voltage switch (see Figure 1). The sine-wave generator would include a pair of operational amplifiers in a feedback configuration, the parameters of which would be chosen to obtain a sinusoidal timing signal of the desired frequency. The buffer would introduce a slight delay (approximately equal to 20 ns) but would otherwise

  12. Experimental Measurement of Resonance Islands Induced by the RF Voltage Modulation

    SciTech Connect

    Minty, Michiko

    2003-07-11

    Synchrotron motion with an external rf voltage modulation was studied experimentally. Beam particles, in the presence of electron cooling, were observed to damp to the basins of resonance islands, which were produced by the parametric resonance of the rf voltage modulation. The measured phase amplitudes of the centers of these resonance islands were found to agree well with theory.

  13. Module Five: Relationships of Current, Voltage, and Resistance; Basic Electricity and Electronics Individualized Learning System.

    ERIC Educational Resources Information Center

    Bureau of Naval Personnel, Washington, DC.

    This module covers the relationships between current and voltage; resistance in a series circuit; how to determine the values of current, voltage, resistance, and power in resistive series circuits; the effects of source internal resistance; and an introduction to the troubleshooting of series circuits. This module is divided into five lessons:…

  14. Unlikely Combination of Experiments with a Novel High-Voltage CIGS Photovoltaic Array (Presentation)

    SciTech Connect

    del Cueto, J. A.; Sekulic, B. R.

    2006-05-01

    The goals of this study are to: (1) parameterize current-voltage (I-V) performance over a wide range of illumination and temperatures: (a) 50-1150 W/m{sup 2} irradiance, 5-65 C; (b) obtain array temperature coefficients; and (c) quantify energy production; (2) investigate high-voltage leakage currents from the CIS modules in a high-voltage array: determine dependence on moisture, temperature, and voltage bias and ascertain corrosion problems if any; and (3) study long-term power and energy production stability.

  15. 30 CFR 75.813 - High-voltage longwalls; scope.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false High-voltage longwalls; scope. 75.813 Section 75.813 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution High-Voltage Longwalls § 75.813...

  16. 30 CFR 75.813 - High-voltage longwalls; scope.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage longwalls; scope. 75.813 Section 75.813 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution High-Voltage Longwalls § 75.813...

  17. High Power Modulator.

    DTIC Science & Technology

    1986-08-01

    The bushing consists of three segments of alumina tubing with interspersed metal rings. All metallic surfaces ex- *posed to vacuum are stainless steel...high voltage transient only lasted for several hundred ns, no vacuum insulator breakdown was noted during the tests. 4.2 Acceptance tests at PSI The...ation at 1 pps. The oil insulated output pulse transformer has multiple secondary windings which can be used to provide heater power for a thermionic

  18. Complete low power controller for high voltage power systems

    SciTech Connect

    Sumner, R.; Blanar, G.

    1997-12-31

    The MHV100 is a custom CMOS integrated circuit, developed for the AMS experiment. It provides complete control for a single channel high voltage (HV) generator and integrates all the required digital communications, D to A and A to D converters, the analog feedback loop and output drivers. This chip has been designed for use in both distributed high voltage systems or for low cost single channel high voltage systems. The output voltage and current range is determined by the external components.

  19. Characterization and Performance Comparison of Low-Voltage, High-Speed, Push-Pull and Traveling-Wave Silicon Mach-Zehnder Modulators

    DTIC Science & Technology

    2014-03-27

    168 5.1 Optical mode carried by the ridge waveguides used in the MZMs, with a width of 560 nm, and a height...Optical mode carried by the ridge waveguides used in the MZMs, with a width of 560 nm, and a height of 240 nm. The geometry of the ridge waveguide is...for telecommunications [4] [5]. With a high index contrast between silicon and its counterpart, silicon dioxide cladding (∼ 1.5), bend radii can be

  20. High Voltage Power Transmission for Wind Energy

    NASA Astrophysics Data System (ADS)

    Kim, Young il

    The high wind speeds and wide available area at sea have recently increased the interests on offshore wind farms in the U.S.A. As offshore wind farms become larger and are placed further from the shore, the power transmission to the onshore grid becomes a key feature. Power transmission of the offshore wind farm, in which good wind conditions and a larger installation area than an onshore site are available, requires the use of submarine cable systems. Therefore, an underground power cable system requires unique design and installation challenges not found in the overhead power cable environment. This paper presents analysis about the benefit and drawbacks of three different transmission solutions: HVAC, LCC/VSC HVDC in the grid connecting offshore wind farms and also analyzed the electrical characteristics of underground cables. In particular, loss of HV (High Voltage) subsea power of the transmission cables was evaluated by the Brakelmann's theory, taking into account the distributions of current and temperature.

  1. Depression in high voltage power line workers.

    PubMed

    de Souza, Suerda Fortaleza; Carvalho, Fernando Martins; de Araújo, Tânia Maria; Koifman, Sergio; Porto, Lauro Antonio

    2012-06-01

    To investigate the association between effort-reward imbalance and depressive symptoms among workers in high voltage power lines. A cross-sectional study among 158 workers from an electric power company in Northeast Brazil. The main independent variables were the Effort-Reward Imbalance Model (ERI) dimensions and the main dependent variable was the prevalence of depression, as measured by the Center for Epidemiologic Studies Depression (CES-D) scale. Data were analyzed by multiple logistic regression techniques. The group of low reward workers presented a depression prevalence rate 6.2 times greater than those in the high reward group. The depression prevalence rate was 3.3 greater in workers in the situation of imbalanced effort-reward than in those in effort-reward equilibrium. The prevalence of depression was strongly associated with psychosocial factors present in the work of electricity workers.

  2. High-frequency graphene voltage amplifier.

    PubMed

    Han, Shu-Jen; Jenkins, Keith A; Valdes Garcia, Alberto; Franklin, Aaron D; Bol, Ageeth A; Haensch, Wilfried

    2011-09-14

    While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The graphene field-effect transistor (GFET) has a 6-finger gate design with gate length of 500 nm. The graphene common-source amplifier exhibits ∼5 dB low frequency gain with the 3 dB bandwidth greater than 6 GHz. This first AC voltage gain demonstration of a GFET is attributed to the clear current saturation in the device, which is enabled by an ultrathin gate dielectric (4 nm HfO(2)) of the embedded gate structures. The device also shows extrinsic transconductance of 1.2 mS/μm at 1 V drain bias, the highest for graphene FETs using large-scale graphene reported to date.

  3. Integration Test of the High Voltage Hall Accelerator System Components

    NASA Technical Reports Server (NTRS)

    Kamhawi, Hani; Haag, Thomas; Huang, Wensheng; Pinero, Luis; Peterson, Todd; Dankanich, John

    2013-01-01

    NASA Glenn Research Center is developing a 4 kilowatt-class Hall propulsion system for implementation in NASA science missions. NASA science mission performance analysis was completed using the latest high voltage Hall accelerator (HiVHAc) and Aerojet-Rocketdyne's state-of-the-art BPT-4000 Hall thruster performance curves. Mission analysis results indicated that the HiVHAc thruster out performs the BPT-4000 thruster for all but one of the missions studied. Tests of the HiVHAc system major components were performed. Performance evaluation of the HiVHAc thruster at NASA Glenn's vacuum facility 5 indicated that thruster performance was lower than performance levels attained during tests in vacuum facility 12 due to the lower background pressures attained during vacuum facility 5 tests when compared to vacuum facility 12. Voltage-Current characterization of the HiVHAc thruster in vacuum facility 5 showed that the HiVHAc thruster can operate stably for a wide range of anode flow rates for discharge voltages between 250 and 600 volts. A Colorado Power Electronics enhanced brassboard power processing unit was tested in vacuum for 1,500 hours and the unit demonstrated discharge module efficiency of 96.3% at 3.9 kilowatts and 650 volts. Stand-alone open and closed loop tests of a VACCO TRL 6 xenon flow control module were also performed. An integrated test of the HiVHAc thruster, brassboard power processing unit, and xenon flow control module was performed and confirmed that integrated operation of the HiVHAc system major components. Future plans include continuing the maturation of the HiVHAc system major components and the performance of a single-string integration test.

  4. Impact of Solar Array Designs on High Voltage Operations

    NASA Technical Reports Server (NTRS)

    Brandhorst, Henry W., Jr.; Ferguson, Dale; Piszczor, Mike; ONeill, Mark

    2006-01-01

    adhesive. In practice, these cover glasses and adhesive do not cover the cell edges. Finally, in the SLA, the entire cell and cell edges are fully encapsulated by a cover glass that overhangs the cell perimeter and the silicone adhesive covers the cell edges providing a sealed environment. These three types of blanket technology have been tested at GRC and Auburn. The results of these tests will be described. For example, 15 modules composed of four state-of-the-art 2x4 cm GaAs solar cells with 150 pm cover glasses connected in two-cell series strings were tested at high voltage, in plasma under hypervelocity impact. A picture of one of the modules is shown in figure 1. These were prepared by standard industry practice from a major supplier and had efficiencies above 18%. The test results and other fabrication factors that influenced the tests will be presented. In addition, results for SLA segments tested under the same conditions will be presented. Testing of thin film blankets at GRC will also be presented. Figure 1 : Typical GaAs Solar Cell Module These results will show significant differences in resistance to arcing that are directly related to array design and manufacturing procedures. Finally, the approaches for mitigating the problems uncovered by these tests will be described. These will lay the foundation for future higher voltage array operation, even including voltages above 300-600 V for direct drive SEP applications.

  5. High voltage supply for neutron tubes in well logging applications

    DOEpatents

    Humphreys, D. Russell

    1989-01-01

    A high voltage supply is provided for a neutron tube used in well logging. The "biased pulse" supply of the invention combines DC and "full pulse" techniques and produces a target voltage comprising a substantial negative DC bias component on which is superimposed a pulse whose negative peak provides the desired negative voltage level for the neutron tube. The target voltage is preferably generated using voltage doubling techniques and employing a voltage source which generates bipolar pulse pairs having an amplitude corresponding to the DC bias level.

  6. Radiofrequency exposure near high-voltage lines.

    PubMed Central

    Vignati, M; Giuliani, L

    1997-01-01

    Many epidemiologic studies suggest a relationship between incidence of diseases like cancer and leukemia and exposure to 50/60 Hz magnetic fields. Some studies suggest a relationship between leukemia incidence in populations residing near high-voltage lines and the distance to these lines. Other epidemiologic studies suggest a relationship between leukemia incidence and exposure to 50/60 Hz magnetic fields (measured or estimated) and distance from the main system (220 or 120 V). The present work does not question these results but is intended to draw attention to a possible concurrent cause that might also increase the incidence of this disease; the presence on an electric grid of radiofrequency currents used for communications and remote control. These currents have been detected on high- and medium-voltage lines. In some cases they are even used on the main system for remote reading of electric meters. This implies that radiofrequency (RF) magnetic fields are present near the electric network in addition to the 50/60 Hz fields. This intensity of these RF fields is low but the intensity of currents induced in the human body by exposure to magnetic fields increases with frequency. Because scientific research has not yet clarified whether the risk is related to the value of magnetic induction or to the currents this kind of exposure produces in the human body, it is reasonable to suggest that the presence of the RF magnetic fields must be considered in the context of epidemiologic studies. Images Figure 3. Figure 4. Figure 5. PMID:9467084

  7. Conceptual definition of a high voltage power supply test facility

    NASA Technical Reports Server (NTRS)

    Biess, John J.; Chu, Teh-Ming; Stevens, N. John

    1989-01-01

    NASA Lewis Research Center is presently developing a 60 GHz traveling wave tube for satellite cross-link communications. The operating voltage for this new tube is - 20 kV. There is concern about the high voltage insulation system and NASA is planning a space station high voltage experiment that will demonstrate both the 60 GHz communications and high voltage electronics technology. The experiment interfaces, requirements, conceptual design, technology issues and safety issues are determined. A block diagram of the high voltage power supply test facility was generated. It includes the high voltage power supply, the 60 GHz traveling wave tube, the communications package, the antenna package, a high voltage diagnostics package and a command and data processor system. The interfaces with the space station and the attached payload accommodations equipment were determined. A brief description of the different subsystems and a discussion of the technology development needs are presented.

  8. Neutron-induced single event burnout in high voltage electronics

    SciTech Connect

    Normand, E.; Wert, J.L.; Oberg, D.L.; Majewski, P.P.; Voss, P.; Wender, S.A.

    1997-12-01

    Energetic neutrons with an atmospheric neutron spectrum, which were demonstrated to induce single event burnout in power MOSFETs, have been shown to induce burnout in high voltage (>3,000V) electronics when operated at voltages as low as 50% of rated voltage. The laboratory failure rates correlate well with field failure rates measured in Europe.

  9. A new very high voltage semiconductor switch

    NASA Technical Reports Server (NTRS)

    Sundberg, G. R.

    1985-01-01

    A new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of 10 higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.

  10. Folded-Cavity Resonators as Key Elements for Optical Filtering and Low-Voltage Electroabsorption Modulation

    NASA Astrophysics Data System (ADS)

    Djordjev, Kostadin D.; Lin, Chao-Kun; Zhu, Jintian; Bour, David; Tan, Michael R.

    2006-09-01

    Folded-cavity (FC) resonators, which are based on shallow-etched ridge waveguides combined with four deeply etched turning mirrors, are designed and fabricated. The device consists of a resonant FC and a bus waveguide coupled to it through a directional coupler. Optical passive filters, based on this technology, exhibit quality factors in the excess of 5000, with a low insertion loss of 5 dB (including the input coupling loss to a fiber) and more than 15-dB extinction at resonance. When the filter is combined with an electroabsorption active region and is designed to operate in the overcoupled regime, a low-voltage/high-extinction-ratio resonant modulation becomes feasible. The resonant modulator exhibits a low insertion loss (greater than 22-dB extinction at resonance) and offers a low-voltage operation. A change in the applied voltage by 0.7 V (close to the critically coupled conditions) leads to a transmission change of more than 16 dB. Open eye diagrams at 12 Gb/s are presented. To decrease the insertion loss, multiple material bangaps are further monolithically integrated across the wafer by utilizing the quantum-well-intermixing techniques.

  11. Low Voltage Alarm Apprenticeship. Related Training Modules. 6.1-6.6 Safety.

    ERIC Educational Resources Information Center

    Lane Community Coll., Eugene, OR.

    This packet of six learning modules on safety is one of eight such packets developed for apprenticeship training for low voltage alarm. Introductory materials are a complete listing of all available modules and a supplementary reference list. Each module contains some or all of these components: goal, performance indicators, study guide (a check…

  12. Low Voltage Alarm Apprenticeship. Related Training Modules. 7.1-26.10 Alarm Basics.

    ERIC Educational Resources Information Center

    Lane Community Coll., Eugene, OR.

    This packet of 70 learning modules on alarm basics is 1 of 8 such packets developed for apprenticeship training for low voltage alarm. Introductory materials are a complete listing of all available modules and a supplementary reference list. Each module contains some or all of these components: goal, performance indicators, study guide (a check…

  13. Low Voltage Alarm Apprenticeship. Related Training Modules. 2.1-5.3 Electricity/Electronics.

    ERIC Educational Resources Information Center

    Lane Community Coll., Eugene, OR.

    This packet of 29 learning modules on electricity/electronics is 1 of 8 such packets developed for apprenticeship training for low voltage alarm. Introductory materials are a complete listing of all available modules and a supplementary reference list. Each module contains some or all of these components: goal, performance indicators, study guide…

  14. Low Voltage Alarm Apprenticeship. Related Training Modules. 0.1 History of Alarms.

    ERIC Educational Resources Information Center

    Lane Community Coll., Eugene, OR.

    This packet of one learning module on the history of alarms is one of eight such packets developed for apprenticeship training for low voltage alarm. Introductory materials are a complete listing of all available modules and a supplementary reference list. Each module contains some or all of these components: goal, performance indicators, study…

  15. Potassium Modulates Electrolyte Balance and Blood Pressure through Effects on Distal Cell Voltage and Chloride

    PubMed Central

    Terker, Andrew S.; Zhang, Chong; McCormick, James A.; Lazelle, Rebecca A.; Zhang, Chengbiao; Meermeier, Nicholas P.; Siler, Dominic A.; Park, Hae J.; Fu, Yi; Cohen, David M.; Weinstein, Alan M.; Wang, Wen-Hui; Yang, Chao-Ling; Ellison, David H.

    2015-01-01

    SUMMARY Dietary potassium deficiency, common in Western diets, raises blood pressure and enhances salt sensitivity. Potassium homeostasis requires a molecular switch in the distal convoluted tubule (DCT), which fails in familial hyperkalemic hypertension (pseudohypoaldosteronism type 2), activating the thiazide-sensitive NaCl cotransporter, NCC. Here, we show that dietary potassium deficiency activates NCC, even in the setting of high salt intake, thereby causing sodium retention and a rise in blood pressure. The effect is dependent on plasma potassium, which modulates DCT cell membrane voltage and, in turn, intracellular chloride. Low intracellular chloride stimulates WNK kinases to activate NCC, limiting potassium losses, even at the expense of increased blood pressure. These data show that DCT cells, like adrenal cells, sense potassium via membrane voltage. In the DCT, hyperpolarization activates NCC via WNK kinases, whereas in the adrenal gland, it inhibits aldosterone secretion. These effects work in concert to maintain potassium homeostasis. PMID:25565204

  16. Potassium modulates electrolyte balance and blood pressure through effects on distal cell voltage and chloride.

    PubMed

    Terker, Andrew S; Zhang, Chong; McCormick, James A; Lazelle, Rebecca A; Zhang, Chengbiao; Meermeier, Nicholas P; Siler, Dominic A; Park, Hae J; Fu, Yi; Cohen, David M; Weinstein, Alan M; Wang, Wen-Hui; Yang, Chao-Ling; Ellison, David H

    2015-01-06

    Dietary potassium deficiency, common in modern diets, raises blood pressure and enhances salt sensitivity. Potassium homeostasis requires a molecular switch in the distal convoluted tubule (DCT), which fails in familial hyperkalemic hypertension (pseudohypoaldosteronism type 2), activating the thiazide-sensitive NaCl cotransporter, NCC. Here, we show that dietary potassium deficiency activates NCC, even in the setting of high salt intake, thereby causing sodium retention and a rise in blood pressure. The effect is dependent on plasma potassium, which modulates DCT cell membrane voltage and, in turn, intracellular chloride. Low intracellular chloride stimulates WNK kinases to activate NCC, limiting potassium losses, even at the expense of increased blood pressure. These data show that DCT cells, like adrenal cells, sense potassium via membrane voltage. In the DCT, hyperpolarization activates NCC via WNK kinases, whereas in the adrenal gland, it inhibits aldosterone secretion. These effects work in concert to maintain potassium homeostasis. Copyright © 2015 Elsevier Inc. All rights reserved.

  17. High-frequency voltage oscillations in cultured astrocytes

    PubMed Central

    Fleischer, Wiebke; Theiss, Stephan; Slotta, Johannes; Holland, Christine; Schnitzler, Alfons

    2015-01-01

    Because of their close interaction with neuronal physiology, astrocytes can modulate brain function in multiple ways. Here, we demonstrate a yet unknown astrocytic phenomenon: Astrocytes cultured on microelectrode arrays (MEAs) exhibited extracellular voltage fluctuations in a broad frequency spectrum (100–600 Hz) after electrical stimulation. These aperiodic high-frequency oscillations (HFOs) could last several seconds and did not spread across the MEA. The voltage-gated calcium channel antagonist cilnidipine dose-dependently decreased the power of the oscillations. While intracellular calcium was pivotal, incubation with bafilomycin A1 showed that vesicular release of transmitters played only a minor role in the emergence of HFOs. Gap junctions and volume-regulated anionic channels had just as little functional impact, which was demonstrated by the addition of carbenoxolone (100 μmol/L) and NPPB (100 μmol/L). Hyperpolarization with low potassium in the extracellular solution (2 mmol/L) dramatically raised oscillation power. A similar effect was seen when we added extra sodium (+50 mmol/L) or if we replaced it with NMDG+ (50 mmol/L). The purinergic receptor antagonist PPADS suppressed the oscillation power, while the agonist ATP (100 μmol/L) had only an increasing effect when the bath solution pH was slightly lowered to pH 7.2. From these observations, we conclude that astrocytic voltage oscillations are triggered by activation of voltage-gated calcium channels and driven by a downstream influx of cations through channels that are permeable for large ions such as NMDG+. Most likely candidates are subtypes of pore-forming P2X channels with a low affinity for ATP. PMID:25969464

  18. A new method for compensation of the effect of charging transformer's leakage inductance on PFN voltage regulation in Klystron pulse modulators

    NASA Astrophysics Data System (ADS)

    Patel, Akhil; Kale, Umesh; Shrivastava, Purushottam

    2017-04-01

    The Line type modulators have been widely used to generate high voltage rectangular pulses to power the klystron for high power RF generation. In Line type modulator, the Pulse Forming Network (PFN) which is a cascade combination of lumped capacitors and inductors is used to store the electrical energy. The charged PFN is then discharged into a klystron by firing a high voltage Thyratron switch. This discharge generates a high voltage rectangular pulse across the klystron electrodes. The amplitude and phase of Klystron's RF output is governed by the high voltage pulse amplitude. The undesired RF amplitude and phase stability issues arises at the klystron's output due to inter-pulse and during the pulse amplitude variations. To reduce inter-pulse voltage variations, the PFN is required to be charged at the same voltage after every discharge cycle. At present, the combination of widely used resonant charging and deQing method is used to regulate the pulse to pulse PFN voltage variations but the charging transformer's leakage inductance puts an upper bound on the regulation achievable by this method. Here we have developed few insights of the deQing process and devised a new compensation method to compensate this undesired effect of charging transformer's leakage inductance on the pulse to pulse PFN voltage stability. This compensation is accomplished by the controlled partial discharging of the split PFN capacitor using a low voltage MOSFET switch. Theoretically, very high values of pulse to pulse voltage stability may be achieved using this method. This method may be used in deQing based existing modulators or in new modulators, to increase the pulse to pulse voltage stability, without having a very tight bound on charging transformer's leakage inductance. Given a stable charging power supply, this method may be used to further enhance the inter-pulse voltage stability of modulators which employ the direct charging, after replacing the direct charging with the

  19. A Double-Pole High Voltage High Current Switch

    DTIC Science & Technology

    2005-12-01

    NAVAL POSTGRADUATE SCHOOL MONTEREY, CALIFORNIA THESIS Approved for public release; distribution is unlimited A DOUBLE- POLE HIGH...December 2005 3. REPORT TYPE AND DATES COVERED Master’s Thesis 4. TITLE AND SUBTITLE: A Double- Pole High Voltage High Current Switch 6. AUTHOR(S...to divert heavy charged particles, e.g. Cu+. 15. NUMBER OF PAGES 68 14. SUBJECT TERMS Double- Pole , Pulse Forming Inductive Network, PFIN

  20. High Voltage Application of Explosively Formed Fuses

    SciTech Connect

    Tasker, D.G.; Goforth, J.H.; Fowler, C.M.; Lopez, E.M.; Oona, H.; Marsh, S.P.; King, J.C.; Herrera, D.H.; Torres, D.T.; Sena, F.C.; Martinez, E.C.; Reinovsky, R.E.; Stokes, J.L.; Tabaka, L.J.; Kiuttu, G.; Degnan, J.

    1998-10-18

    At Los Alamos, the authors have primarily applied Explosively Formed Fuse (EFF) techniques to high current systems. In these systems, the EFF has interrupted currents from 19 to 25 MA, thus diverting the current to low inductance loads. The magnitude of transferred current is determined by the ratio of storage inductance to load inductance, and with dynamic loads, the current has ranged from 12 to 20 MA. In a system with 18 MJ stored energy, the switch operates at a power up to 6 TW. The authors are now investigating the use of the EFF technique to apply high voltages to high impedance loads in systems that are more compact. In these systems, they are exploring circuits with EFF lengths from 43 to 100 cm, which have storage inductances large enough to apply 300 to 500 kV across high impedance loads. Experimental results and design considerations are presented. Using cylindrical EFF switches of 10 cm diameter and 43 cm length, currents of approximately 3 MA were interrupted producing {approximately}200 kV. This indicate s the switch had an effective resistance of {approximately}100 m{Omega} where 150--200 m{Omega} was expected. To understand the lower performance, several parameters were studied, including: electrical conduction through the explosive products; current density; explosive initiation; insulator type; conductor thickness; and so on. The results show a number of interesting features, most notably that the primary mechanism of switch operation is mechanical and not electrical fusing of the conductor. Switches opening on a 10 to 10 {micro}s time scale with resistances starting at 50 {micro}{Omega} and increasing to perhaps 1 {Omega} now seem possible to construct, using explosive charges as small as a few pounds.

  1. High Voltage Applications of Explosively Formed Fuses

    NASA Astrophysics Data System (ADS)

    Tasker, D. G.; Goforth, J. H.; Fowler, C. M.; Herrera, D. H.; King, J. C.; Lopez, E. A.; Martinez, E. C.; Oona, H.; Marsh, S. P.; Reinovsky, R. E.; Stokes, J.; Tabaka, L. J.; Torres, D. T.; Sena, F. C.; Kiuttu, G.; Degnan, J.

    2004-11-01

    At Los Alamos, we have primarily applied Explosively Formed Fuse (EFF) techniques to high current systems. In these systems, the EFF has interrupted currents from 19-25 MA, thus diverting the current to low inductance loads. The transferred current magnitude is determined by the ratio of storage inductance to load inductance and, with dynamic loads, the current has ranged from 12-20 MA. In a system with 18 MJ stored energy, the switch operates at a power of up to 6 TW. We are now investigating the use of the EFF technique to apply high voltages to high impedance loads in systems that are more compact. In these systems we are exploring circuits with EFF lengths from 43-100 cm, which have storage inductances large enough to apply 300-500 kV across high impedance loads. Experimental results and design considerations are presented. Using cylindrical EFF switches of 10 cm diameter and 43 cm length, currents of approximately 3 MA were interrupted producing ~200 kV. This indicates the switch had an effective resistance of ~100 mΩ where 150-200 mΩ was expected. To understand the lower performance, several parameters were studied including electrical conduction through the explosive products; current density; explosive initiation; insulator type and conductor thickness. The results show a number of interesting features, most notably that the primary mechanism of switch operation is mechanical and not electrical fusing of the conductor. Switches opening on a 1-10 μs time scale with resistances starting at 50 μΩ and increasing to perhaps 1 Ω now seem possible to construct using explosive charges as small as a few pounds.

  2. Methods, systems and apparatus for adjusting modulation index to improve linearity of phase voltage commands

    DOEpatents

    Gallegos-Lopez, Gabriel; Perisic, Milun; Kinoshita, Michael H.

    2017-03-14

    Embodiments of the present invention relate to methods, systems and apparatus for controlling operation of a multi-phase machine in a motor drive system. The disclosed embodiments provide a mechanism for adjusting modulation index of voltage commands to improve linearity of the voltage commands.

  3. High voltage bus and auxiliary heater control system for an electric or hybrid vehicle

    DOEpatents

    Murty, Balarama Vempaty

    2000-01-01

    A control system for an electric or hybrid electric vehicle includes a vehicle system controller and a control circuit having an electric immersion heater. The heater is electrically connected to the vehicle's high voltage bus and is thermally coupled to a coolant loop containing a heater core for the vehicle's climate control system. The system controller responds to cabin heat requests from the climate control system by generating a pulse width modulated signal that is used by the control circuit to operate the heater at a duty cycle appropriate for the amount of cabin heating requested. The control system also uses the heater to dissipate excess energy produced by an auxiliary power unit and to provide electric braking when regenerative braking is not desirable and manual braking is not necessary. The control system further utilizes the heater to provide a safe discharge of a bank of energy storage capacitors following disconnection of the battery or one of the high voltage connectors used to transmit high voltage operating power to the various vehicle systems. The control circuit includes a high voltage clamping circuit that monitors the voltage on the bus and operates the heater to clamp down the bus voltage when it exceeds a pre-selected maximum voltage. The control system can also be used to phase in operation of the heater when the bus voltage exceeds a lower threshold voltage and can be used to phase out the auxiliary power unit charging and regenerative braking when the battery becomes fully charged.

  4. High voltage bus and auxiliary heater control system for an electric or hybrid vehicle

    SciTech Connect

    Murty, B.V.

    2000-03-21

    A control system for an electric or hybrid electric vehicle includes a vehicle system controller and a control circuit having an electric immersion heater. The heater is electrically connected to the vehicle's high voltage bus and is thermally coupled to a coolant loop containing a heater core for the vehicle's climate control system. The system controller responds to cabin heat requests from the climate control system by generating a pulse width modulated signal that is used by the control circuit to operate the heater at a duty cycle appropriate for the amount of cabin heating requested. The control system also uses the heater to dissipate excess energy produced by an auxiliary power unit and to provide electric braking when regenerative braking is not desirable and manual braking is not necessary. The control system further utilizes the heater to provide a safe discharge of a bank of energy storage capacitors following disconnection of the battery or one of the high voltage connectors used to transmit high voltage operating power to the various vehicle systems. The control circuit includes a high voltage clamping circuit that monitors the voltage on the bus and operates the heater to clamp down the bus voltage when it exceeds a pre-selected maximum voltage. The control system can also be used to phase in operation of the heater when the bus voltage exceeds a lower threshold voltage and can be used to phase out the auxiliary power unit charging and regenerative braking when the battery becomes fully charged.

  5. Field of High Voltage Engineering at Graz University of Technology

    NASA Astrophysics Data System (ADS)

    Pack, Stephan

    High Voltage Engineering is an important task at the Graz University of Technology since the early 1970s. Additional importance was given by the national decission, to offer this university and research activities for Austria in Graz only. Therfore this paper reports—based on the history—the actual situation of university education and research activities in the field of high voltage engineering and gives impressions on high voltage (HV) and extra high voltage (EHV) test facilities and test examples at the accredited laboratory of this university.

  6. High-voltage field-controlled integrated thyristor

    NASA Astrophysics Data System (ADS)

    Grekhov, I. V.; Rozhkov, A. V.; Kostina, L. S.; Konovalov, A. V.; Fomenko, Yu. L.

    2013-01-01

    The design and technology of powerful field-controlled integrated thyristors, new energy-saving devices intended for converter equipment, are considered. The turn-on and turn-off current and voltage waveforms of the n+ p' N- n' p + microthyristor chip are presented, and turn-on and turn-off mechanisms are discussed. The development of local dynamic breakdown at turn-off is experimentally studied. The respective waveforms for this process are given, and the type of breakdown at a current density of about 150 A/cm2 is demonstrated. The current-voltage characteristics in the on state at room temperature and at 125°C indicate the temperature dependence changes sign at a current density above 60 A/cm2, becoming positive. This is significant for parallel operation of microthyristor chips in a module. It is shown that the static and dynamic characteristics of simple-in-design field-controlled integrated thyristors are highly competitive with those of insulated-gate bipolar transistors-basic devices of advanced high-power converter equipment.

  7. Solid electrolyte: The key for high-voltage lithium batteries

    SciTech Connect

    Li, Juchuan; Ma, Cheng; Chi, Miaofang; Liang, Chengdu; Dudney, Nancy J.

    2014-10-14

    A solid-state high-voltage (5 V) lithium battery is demonstrated to deliver a cycle life of 10 000 with 90% capacity retention. Furthermore, the solid electrolyte enables the use of high-voltage cathodes and Li anodes with minimum side reactions, leading to a high Coulombic efficiency of 99.98+%.

  8. Solar photovoltaic charging of high voltage nickel metal hydride batteries using DC power conversion

    NASA Astrophysics Data System (ADS)

    Kelly, Nelson A.; Gibson, Thomas L.

    There are an increasing number of vehicle choices available that utilize batteries and electric motors to reduce tailpipe emissions and increase fuel economy. The eventual production of electricity and hydrogen in a renewable fashion, such as using solar energy, can achieve the long-term vision of having no tailpipe environmental impact, as well as eliminating the dependence of the transportation sector on dwindling supplies of petroleum for its energy. In this report we will demonstrate the solar-powered charging of the high-voltage nickel-metal hydride (NiMH) battery used in the GM 2-mode hybrid system. In previous studies we have used low-voltage solar modules to produce hydrogen via the electrolysis of water and to directly charge lithium-ion battery modules. Our strategy in the present work was to boost low-voltage PV voltage to over 300 V using DC-DC converters in order to charge the high-voltage NiMH battery, and to regulate the battery charging using software to program the electronic control unit supplied with the battery pack. A protocol for high-voltage battery charging was developed, and the solar to battery charging efficiency was measured under a variety of conditions. We believe this is the first time such high-voltage batteries have been charged using solar energy in order to prove the concept of efficient, solar-powered charging for battery-electric vehicles.

  9. Plasma collection by high voltage spacecraft at low earth orbit

    NASA Technical Reports Server (NTRS)

    Katz, I.; Mandell, M. J.; Schnuelle, G. W.; Parks, D. E.; Steen, P. G.

    1980-01-01

    A computer model of the three-dimensional sheath formation and plasma current collection by high voltage spacecraft has been developed. By using new space charge density and plasma collection algorithms, it is practical to perform calculations for large, complex spacecraft. The model uses NASCAP compatible objects and geometries. Results indicate that ion focusing observed in the laboratory during high voltage collection experiments is probably due to voltage gradients on the collecting surfaces.

  10. High-Voltage Digital-To-Analog Converter

    NASA Technical Reports Server (NTRS)

    Huston, Steven W.

    1990-01-01

    High-voltage 10-bit digital-to-analog converter operates under computer control to put out voltages up to 500 V at currents up to 35 mA. Circuit includes high-voltage power supply used to generate high-voltage square wave at frequency set by computer at value between 0.2 Hz and 10 Hz. Used to drive 0.02-microfarad, 1-kV capacitor at slewing rate of 1 V/microsecond to provide signal for robotic imaging system.

  11. High-voltage solar-cell chip

    NASA Technical Reports Server (NTRS)

    Kapoor, V. J.; Valco, G. J.; Skebe, G. G.; Evans, J. C., Jr.

    1985-01-01

    Integrated circuit technology has been successfully applied to the design and fabrication of 0.5 x 0.5-cm planar multijunction solar-cell chips. Each of these solar cells consisted of six voltage-generating unit cells monolithically connected in series and fabricated on a 75-micron-thick, p-type, single crystal, silicon substrate. A contact photolithic process employing five photomask levels together with a standard microelectronics batch-processing technique were used to construct the solar-cell chip. The open-circuit voltage increased rapidly with increasing illumination up to 5 AM1 suns where it began to saturate at the sum of the individual unit-cell voltages at a maximum of 3.0 V. A short-circuit current density per unit cell of 240 mA/sq cm was observed at 10 AM1 suns.

  12. Large voltage modulation in superconducting quantum interference devices with submicron-scale step-edge junctions

    NASA Astrophysics Data System (ADS)

    Lam, Simon K. H.

    2017-09-01

    A promising direction to improve the sensitivity of a SQUID is to increase its junction's normal resistance value, Rn, as the SQUID modulation voltage scales linearly with Rn. As a first step to develop highly sensitive single layer SQUID, submicron scale YBCO grain boundary step edge junctions and SQUIDs with large Rn were fabricated and studied. The step-edge junctions were reduced to submicron scale to increase their Rn values using focus ion beam, FIB and the measurement of transport properties were performed from 4.3 to 77 K. The FIB induced deposition layer proves to be effective to minimize the Ga ion contamination during the FIB milling process. The critical current-normal resistance value of submicron junction at 4.3 K was found to be 1-3 mV, comparable to the value of the same type of junction in micron scale. The submicron junction Rn value is in the range of 35-100 Ω, resulting a large SQUID modulation voltage in a wide temperature range. This performance promotes further investigation of cryogen-free, high field sensitivity SQUID applications at medium low temperature, e.g. at 40-60 K.

  13. Voltage equalization of an ultracapacitor module by cell grouping using number partitioning algorithm

    NASA Astrophysics Data System (ADS)

    Oyarbide, E.; Bernal, C.; Molina, P.; Jiménez, L. A.; Gálvez, R.; Martínez, A.

    2016-01-01

    Ultracapacitors are low voltage devices and therefore, for practical applications, they need to be used in modules of series-connected cells. Because of the inherent manufacturing tolerance of the capacitance parameter of each cell, and as the maximum voltage value cannot be exceeded, the module requires inter-cell voltage equalization. If the intended application suffers repeated fast charging/discharging cycles, active equalization circuits must be rated to full power, and thus the module becomes expensive. Previous work shows that a series connection of several sets of paralleled ultracapacitors minimizes the dispersion of equivalent capacitance values, and also the voltage differences between capacitors. Thus the overall life expectancy is improved. This paper proposes a method to distribute ultracapacitors with a number partitioning-based strategy to reduce the dispersion between equivalent submodule capacitances. Thereafter, the total amount of stored energy and/or the life expectancy of the device can be considerably improved.

  14. Surface voltage gradient role in high voltage solar array-plasma interaction: Center Director's discretionary fund

    NASA Technical Reports Server (NTRS)

    Carruth, M. R., Jr.

    1985-01-01

    A large amount of experimental and analytical effort has been directed toward understanding the plasma sheath growth and discharge phenomena which lead to high voltage solar array-space plasma interactions. An important question which has not been addressed is how the surface voltage gradient on such an array may affect these interactions. The results of this study indicate that under certain conditions, the voltage gradient should be taken into account when evaluating the effect on a solar array operating in a plasma environment.

  15. High voltage high brightness electron accelerator with MITL voltage adder coupled to foilless diode

    SciTech Connect

    Mazarakis, M.G.; Poulkey, J.W.; Rovang, D.

    1995-12-31

    The design and analysis of a high brightness electron beam experiment under construction at Sandia National Laboratory is presented. The beam energy is 12 MeV, the current 35-40 kA, the rms radius 0.5 mm, and the pulse duration FWHM 40 ns. The accelerator is SABRE a pulsed inductive voltage adder, and the electron source is a magnetically immersed foilless diode. This experiment has as its goal to stretch the technology to the edge and produce the highest possible electron current in a submillimeter radius beam.

  16. High voltage design structure for high temperature superconducting device

    DOEpatents

    Tekletsadik, Kasegn D [Rexford, NY

    2008-05-20

    In accordance with the present invention, modular corona shields are employed in a HTS device to reduce the electric field surrounding the HTS device. In a exemplary embodiment a fault current limiter module in the insulation region of a cryogenic cooling system has at least one fault current limiter set which employs a first corona shield disposed along the top portion of the fault current limiter set and is electrically coupled to the fault current limiter set. A second corona shield is disposed along the bottom portion of the fault current limiter set and is electrically coupled to the fault current limiter set. An insulation barrier is disposed within the insulation region along at least one side of the fault current limiter set. The first corona shield and the second corona shield act together to reduce the electric field surrounding the fault limiter set when voltage is applied to the fault limiter set.

  17. High voltage switches having one or more floating conductor layers

    SciTech Connect

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  18. Modulation of a voltage-gated Na+ channel by sevoflurane involves multiple sites and distinct mechanisms.

    PubMed

    Barber, Annika F; Carnevale, Vincenzo; Klein, Michael L; Eckenhoff, Roderic G; Covarrubias, Manuel

    2014-05-06

    Halogenated inhaled general anesthetic agents modulate voltage-gated ion channels, but the underlying molecular mechanisms are not understood. Many general anesthetic agents regulate voltage-gated Na(+) (NaV) channels, including the commonly used drug sevoflurane. Here, we investigated the putative binding sites and molecular mechanisms of sevoflurane action on the bacterial NaV channel NaChBac by using a combination of molecular dynamics simulation, electrophysiology, and kinetic analysis. Structural modeling revealed multiple sevoflurane interaction sites possibly associated with NaChBac modulation. Electrophysiologically, sevoflurane favors activation and inactivation at low concentrations (0.2 mM), and additionally accelerates current decay at high concentrations (2 mM). Explaining these observations, kinetic modeling suggests concurrent destabilization of closed states and low-affinity open channel block. We propose that the multiple effects of sevoflurane on NaChBac result from simultaneous interactions at multiple sites with distinct affinities. This multiple-site, multiple-mode hypothesis offers a framework to study the structural basis of general anesthetic action.

  19. Modulation of a voltage-gated Na+ channel by sevoflurane involves multiple sites and distinct mechanisms

    PubMed Central

    Barber, Annika F.; Carnevale, Vincenzo; Klein, Michael L.; Eckenhoff, Roderic G.; Covarrubias, Manuel

    2014-01-01

    Halogenated inhaled general anesthetic agents modulate voltage-gated ion channels, but the underlying molecular mechanisms are not understood. Many general anesthetic agents regulate voltage-gated Na+ (NaV) channels, including the commonly used drug sevoflurane. Here, we investigated the putative binding sites and molecular mechanisms of sevoflurane action on the bacterial NaV channel NaChBac by using a combination of molecular dynamics simulation, electrophysiology, and kinetic analysis. Structural modeling revealed multiple sevoflurane interaction sites possibly associated with NaChBac modulation. Electrophysiologically, sevoflurane favors activation and inactivation at low concentrations (0.2 mM), and additionally accelerates current decay at high concentrations (2 mM). Explaining these observations, kinetic modeling suggests concurrent destabilization of closed states and low-affinity open channel block. We propose that the multiple effects of sevoflurane on NaChBac result from simultaneous interactions at multiple sites with distinct affinities. This multiple-site, multiple-mode hypothesis offers a framework to study the structural basis of general anesthetic action. PMID:24753583

  20. A Comparison of High-Voltage Switches

    SciTech Connect

    Chu, K.W.; Scott, G.L.

    1999-02-01

    This report summarizes our work on high-voltage switches during the past few years. With joint funding from the Department of Energy (DOE) and the Department of Defense (DOD), we tested a wide variety of switches to a common standard. This approach permitted meaningful comparisons between disparate switches. Most switches were purchased from commercial sources, though some were experimental devices. For the purposes of this report, we divided the switches into three generic types (gas, vacuum, and semiconductor) and selected data that best illustrates important strengths and weaknesses of each switch type. Test techniques that indicate the state of health of the switches are emphasized. For example, a good indicator of residual gas in a vacuum switch is the systematic variation of the switching delay in response to changes in temperature and/or operating conditions. We believe that the presentation of this kind of information will help engineers to select and to test switches for their particular applications. Our work was limited to switches capable of driving slappers. Also known as exploding-foil initiators, slappers are detonators that initiate a secondary explosive by direct impact with a small piece of matter moving at the detonation velocity (several thousands of meters per second). A slapper is desirable for enhanced safety (no primary explosive), but it also places extra demands on the capacitor-discharge circuit to deliver a fast-rising current pulse (greater than 10 A/ns) of several thousand amperes. The required energy is substantially less than one joule; but this energy is delivered in less than one microsecond, taking the peak power into the megawatt regime. In our study, the switches operated in the 1 kV to 3 kV range and were physically small, roughly 1 cm{sup 3} or less. Although a fuze functions only once in actual use, multiple-shot capability is important for production testing and for research work. For this reason, we restricted this report

  1. Voltage-impulse-induced dual-range nonvolatile magnetization modulation in metglas/PZT heterostructure

    NASA Astrophysics Data System (ADS)

    Tang, Xiaoli; Su, Hua; Zhang, Huaiwu; Sun, Nian X.

    2016-11-01

    Dual-range, nonvolatile magnetization modulation induced by voltage impulses was investigated in the metglas/lead zirconate titanate (PZT) heterostructure at room temperature. The heterostructure was obtained by bonding a square metglas ribbon on the top electrode of the PZT substrate, which contained defect dipoles resulting from acceptor doping. The PZT substrate achieved two strain hysteretic loops with the application of specific voltage impulse excitation modes. Through strain-mediated magnetoelectric coupling between the metglas ribbon and the PZT substrate, two strain hysteretic loops led to a dual-range nonvolatile magnetization modulation in the heterostructure. Reversible and stable voltage-impulse-induced nonvolatile modulation in the ferromagnetic resonance field and magnetic hysteresis characteristics were also realized. This method provides a promising approach in reducing energy consumption in magnetization modulation and other related devices.

  2. Electrical system architecture having high voltage bus

    DOEpatents

    Hoff, Brian Douglas [East Peoria, IL; Akasam, Sivaprasad [Peoria, IL

    2011-03-22

    An electrical system architecture is disclosed. The architecture has a power source configured to generate a first power, and a first bus configured to receive the first power from the power source. The architecture also has a converter configured to receive the first power from the first bus and convert the first power to a second power, wherein a voltage of the second power is greater than a voltage of the first power, and a second bus configured to receive the second power from the converter. The architecture further has a power storage device configured to receive the second power from the second bus and deliver the second power to the second bus, a propulsion motor configured to receive the second power from the second bus, and an accessory motor configured to receive the second power from the second bus.

  3. Living and Working Safely Around High-Voltage Power Lines.

    SciTech Connect

    United States. Bonneville Power Administration.

    2001-06-01

    High-voltage transmission lines can be just as safe as the electrical wiring in the homes--or just as dangerous. The crucial factor is ourselves: they must learn to behave safely around them. This booklet is a basic safety guide for those who live and work around power lines. It deals primarily with nuisance shocks due to induced voltages, and with potential electric shock hazards from contact with high-voltage lines. References on possible long-term biological effects of transmission lines are shown. In preparing this booklet, the Bonneville Power Administration has drawn on more than 50 years of experience with high-voltage transmission. BPA operates one of the world`s largest networks of long-distance, high-voltage lines. This system has more than 400 substations and about 15,000 miles of transmission lines, almost 4,400 miles of which are operated at 500,000 volts.

  4. Planar LTCC transformers for high voltage flyback converters.

    SciTech Connect

    Schofield, Daryl; Schare, Joshua M.; Glass, Sarah Jill; Roesler, Alexander William; Ewsuk, Kevin Gregory; Slama, George; Abel, Dave

    2007-06-01

    This paper discusses the design and use of low-temperature (850 C to 950 C) co-fired ceramic (LTCC) planar magnetic flyback transformers for applications that require conversion of a low voltage to high voltage (> 100V) with significant volumetric constraints. Measured performance and modeling results for multiple designs showed that the LTCC flyback transformer design and construction imposes serious limitations on the achievable coupling and significantly impacts the transformer performance and output voltage. This paper discusses the impact of various design factors that can provide improved performance by increasing transformer coupling and output voltage. The experiments performed on prototype units demonstrated LTCC transformer designs capable of greater than 2 kV output. Finally, the work investigated the effect of the LTCC microstructure on transformer insulation. Although this paper focuses on generating voltages in the kV range, the experimental characterization and discussion presented in this work applies to designs requiring lower voltage.

  5. High-voltage air-core pulse transformers

    SciTech Connect

    Rohwein, G.J.

    1981-08-01

    High voltage air core pulse transformers are best suited to applications outside the normal ranges of conventional magnetic core transformers. In general these include charge transfer at high power levels and fast pulse generation with comparatively low energy. When properly designed and constructed, they are capable of delivering high energy transfer efficiency and have demonstrated superior high voltage endurance. The general types designed for high voltage pulse generation and energy transfer applications are described. Special emphasis is given to pulse charging systems which operate up to the multi-megavolt range. (WHK)

  6. COTS Li-Ion Cells in High Voltage Batteries

    NASA Technical Reports Server (NTRS)

    Davies, Francis; Darcy, Eric; Jeevarajan, Judy; Cowles, Phil

    2003-01-01

    Testing at NASA JSC and COMDEV shows that Commercial Off the Shelf (COTS) Li Ion cells can not be used in high voltage batteries safely without considering the voltage stresses that may be put on the protective devices in them during failure modes.

  7. Optically triggered high voltage switch network and method for switching a high voltage

    DOEpatents

    El-Sharkawi, Mohamed A.; Andexler, George; Silberkleit, Lee I.

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  8. High Input Voltage Discharge Supply for High Power Hall Thrusters Using Silicon Carbide Devices

    NASA Technical Reports Server (NTRS)

    Pinero, Luis R.; Scheidegger, Robert J.; Aulsio, Michael V.; Birchenough, Arthur G.

    2014-01-01

    A power processing unit for a 15 kW Hall thruster is under development at NASA Glenn Research Center. The unit produces up to 400 VDC with two parallel 7.5 kW discharge modules that operate from a 300 VDC nominal input voltage. Silicon carbide MOSFETs and diodes were used in this design because they were the best choice to handle the high voltage stress while delivering high efficiency and low specific mass. Efficiencies in excess of 97 percent were demonstrated during integration testing with the NASA-300M 20 kW Hall thruster. Electromagnet, cathode keeper, and heater supplies were also developed and will be integrated with the discharge supply into a vacuum-rated brassboard power processing unit with full flight functionality. This design could be evolved into a flight unit for future missions that requires high power electric propulsion.

  9. Physicochemical assessment criteria for high-voltage pulse capacitors

    SciTech Connect

    Darian, L. A. Lam, L. Kh.

    2016-12-15

    In the paper, the applicability of decomposition products of internal insulation of high-voltage pulse capacitors is considered (aging is the reason for decomposition products of internal insulation). Decomposition products of internal insulation of high-voltage pulse capacitors can be used to evaluate their quality when in operation and in service. There have been three generations of markers of aging of insulation as in the case with power transformers. The area of applicability of markers of aging of insulation for power transformers has been studied and the area can be extended to high-voltage pulse capacitors. The research reveals that there is a correlation between the components and quantities of markers of aging of the first generation (gaseous decomposition products of insulation) dissolved in insulating liquid and the remaining life of high-voltage pulse capacitors. The application of markers of aging to evaluate the remaining service life of high-voltage pulse capacitor is a promising direction of research, because the design of high-voltage pulse capacitors keeps stability of markers of aging of insulation in high-voltage pulse capacitors. It is necessary to continue gathering statistical data concerning development of markers of aging of the first generation. One should also carry out research aimed at estimation of the remaining life of capacitors using markers of the second and the third generation.

  10. Physicochemical assessment criteria for high-voltage pulse capacitors

    NASA Astrophysics Data System (ADS)

    Darian, L. A.; Lam, L. Kh.

    2016-12-01

    In the paper, the applicability of decomposition products of internal insulation of high-voltage pulse capacitors is considered (aging is the reason for decomposition products of internal insulation). Decomposition products of internal insulation of high-voltage pulse capacitors can be used to evaluate their quality when in operation and in service. There have been three generations of markers of aging of insulation as in the case with power transformers. The area of applicability of markers of aging of insulation for power transformers has been studied and the area can be extended to high-voltage pulse capacitors. The research reveals that there is a correlation between the components and quantities of markers of aging of the first generation (gaseous decomposition products of insulation) dissolved in insulating liquid and the remaining life of high-voltage pulse capacitors. The application of markers of aging to evaluate the remaining service life of high-voltage pulse capacitor is a promising direction of research, because the design of high-voltage pulse capacitors keeps stability of markers of aging of insulation in high-voltage pulse capacitors. It is necessary to continue gathering statistical data concerning development of markers of aging of the first generation. One should also carry out research aimed at estimation of the remaining life of capacitors using markers of the second and the third generation.

  11. High-voltage air-core pulse transformers

    SciTech Connect

    Rohwein, G. J.

    1981-01-01

    General types of air core pulse transformers designed for high voltage pulse generation and energy transfer applications are discussed with special emphasis on pulse charging systems which operate up to the multi-megavolt range. The design, operation, dielectric materials, and performance are described. It is concluded that high voltage air core pulse transformers are best suited to applications outside the normal ranges of conventional magnetic core transformers. In general these include charge transfer at high power levels and fast pulse generation with comparatively low energy. When properly designed and constructed, they are capable of delivering high energy transfer efficiency and have demonstrated superior high voltage endurance. The principal disadvantage of high voltage air core transformers is that they are not generally available from commercial sources. Consequently, the potential user must become thoroughly familiar with all aspects of design, fabrication and system application before he can produce a high performance transformer system. (LCL)

  12. High-voltage pulsed generators for electro-discharge technologies

    NASA Astrophysics Data System (ADS)

    Kovalchuk, B. M.; Kharlov, A. V.; Kumpyak, E. V.; Sinebrykhov, V. A.

    2013-09-01

    A high-voltage pulse technology is one of effective techniques for the disintegration and milling of rocks, separation of ores and synthesized materials, recycling of building and elastoplastic materials. We present here the design and test results of two portable HV pulsed generators, designed for materials fragmentation, though some other technological applications are possible as well. Generator #1 consists of low voltage block, high voltage transformer, high voltage capacitive storage block, two electrode gas switch, fragmentation chamber and control system block. Technical characteristics of the #1 generator: stored energy in HV capacitors can be varied from 50 to 1000 J, output voltage up to 300 kV, voltage rise time ~ 50 ns, typical operation regime 1000 pulses bursts with a repetitive rate up to 10 Hz. Generator #2 is made on an eight stages Marx scheme with two capacitors (100 kV-400 nF) per stage, connected in parallel. Two electrode spark gap switches, operated in atmospheric air, are used in the Marx generator. Parameters of the generator: stored energy in capacitors 2÷8 kJ, amplitude of the output voltage 200÷400 kV, voltage rise time on a load 50÷100 ns, repetitive rate up to 0.5 Hz. The fragmentation process can be controlled within a wide range of parameters for both generators.

  13. Unlikely Combination of Experiments With a Novel High-Voltage CIGS Photovoltaic Array: Preprint

    SciTech Connect

    del Cueto, J. A.; Sekulic, B. R.

    2006-05-01

    A new high-voltage array comprising bipolar strings of copper indium gallium diselenide (CIGS) photovoltaic (PV) modules was inaugurated in 2005. It is equipped with a unique combination of tests, which likely have never before been deployed simultaneously within a single array: full current-voltage (I-V) traces, high-voltage leakage current measurements, and peak-power tracking or temporal stepped-bias profiling. The array nominally produces 1 kW power at 1 sun. The array's electrical characteristics are continuously monitored and controlled with a programmable electronic load interfaced to a data acquisition system (DAS), that also records solar and meteorological data. The modules are mounted with their frames electrically isolated from earth ground, in order to facilitate measurement of the leakage currents that arise between the high voltage bias developed in the series-connected cells and modules and their mounting frames. Because the DAS can perform stepped biasing of the array as a function of time, synchronous detection of the leakage current data with alternating bias is available. Leakage current data and their dependence on temperature and voltage are investigated. Array power data are analyzed across a wide range of varying illuminations and temperatures from the I-V traces. Array performance is also analyzed from an energy output perspective using peak-power tracking data.

  14. Unlikely Combination of Experiments with a Novel High-Voltage CIGS Photovoltaic Array

    SciTech Connect

    del Cueto, J. A.; Sekulic, B. R.

    2006-01-01

    A new high-voltage array comprising bipolar strings of copper indium gallium diselenide (CIGS) photovoltaic (PV) modules was inaugurated in 2005. It is equipped with a unique combination of tests, which likely have never before been deployed simultaneously within a single array: full current-voltage (I-V) traces, high-voltage leakage current measurements, and peak-power tracking or temporal stepped-bias profiling. The array nominally produces 1 kW power at 1 sun. The array's electrical characteristics are continuously monitored and controlled with a programmable electronic load interfaced to a data acquisition system (DAS), that also records solar and meteorological data. The modules are mounted with their frames electrically isolated from earth ground, in order to facilitate measurement of the leakage currents that arise between the high voltage bias developed in the series-connected cells and modules and their mounting frames. Because the DAS can perform stepped biasing of the array as a function of time, synchronous detection of the leakage current data with alternating bias is available. Leakage current data and their dependence on temperature and voltage are investigated. Array power data are analyzed across a wide range of varying illuminations and temperatures from the I-V traces. Array performance is also analyzed from an energy output perspective using peak-power tracking data.

  15. High voltage high repetition rate pulse using Marx topology

    NASA Astrophysics Data System (ADS)

    Hakki, A.; Kashapov, N.

    2015-06-01

    The paper describes Marx topology using MOSFET transistors. Marx circuit with 10 stages has been done, to obtain pulses about 5.5KV amplitude, and the width of the pulses was about 30μsec with a high repetition rate (PPS > 100), Vdc = 535VDC is the input voltage for supplying the Marx circuit. Two Ferrite ring core transformers were used to control the MOSFET transistors of the Marx circuit (the first transformer to control the charging MOSFET transistors, the second transformer to control the discharging MOSFET transistors).

  16. FPGA techniques based new hybrid modulation strategies for voltage source inverters.

    PubMed

    Sudha, L U; Baskaran, J; Elankurisil, S A

    2015-01-01

    This paper corroborates three different hybrid modulation strategies suitable for single-phase voltage source inverter. The proposed method is formulated using fundamental switching and carrier based pulse width modulation methods. The main tale of this proposed method is to optimize a specific performance criterion, such as minimization of the total harmonic distortion (THD), lower order harmonics, switching losses, and heat losses. The proposed method is articulated using fundamental switching and carrier based pulse width modulation methods. Thus, the harmonic pollution in the power system will be reduced and the power quality will be augmented with better harmonic profile for a target fundamental output voltage. The proposed modulation strategies are simulated in MATLAB r2010a and implemented in a Xilinx spartan 3E-500 FG 320 FPGA processor. The feasibility of these modulation strategies is authenticated through simulation and experimental results.

  17. FPGA Techniques Based New Hybrid Modulation Strategies for Voltage Source Inverters

    PubMed Central

    Sudha, L. U.; Baskaran, J.; Elankurisil, S. A.

    2015-01-01

    This paper corroborates three different hybrid modulation strategies suitable for single-phase voltage source inverter. The proposed method is formulated using fundamental switching and carrier based pulse width modulation methods. The main tale of this proposed method is to optimize a specific performance criterion, such as minimization of the total harmonic distortion (THD), lower order harmonics, switching losses, and heat losses. The proposed method is articulated using fundamental switching and carrier based pulse width modulation methods. Thus, the harmonic pollution in the power system will be reduced and the power quality will be augmented with better harmonic profile for a target fundamental output voltage. The proposed modulation strategies are simulated in MATLAB r2010a and implemented in a Xilinx spartan 3E-500 FG 320 FPGA processor. The feasibility of these modulation strategies is authenticated through simulation and experimental results. PMID:25821852

  18. System for instrumenting and manipulating apparatuses in high voltage

    DOEpatents

    Jordan, Kevin

    2016-06-07

    A system for energizing, operating and manipulating apparatuses in high voltage systems. The system uses a dielectric gas such as SF.sub.6 as a driving power supply for a pneumatic motor which ultimately charges a battery or other energy storage device. The stored energy can then be used for instrumentation equipment, or to power any electrical equipment, in the high voltage deck. The accompanying method provides for the use of the SF6 system for operating an electrical device in a high-voltage environment.

  19. High voltage bushing having weathershed and surrounding stress relief collar

    DOEpatents

    Cookson, Alan H.

    1981-01-01

    A high voltage electric bushing comprises a hollow elongated dielectric weathershed which encloses a high voltage conductor. A collar formed of high voltage dielectric material is positioned over the weathershed and is bonded thereto by an interface material which precludes moisture-like contaminants from entering between the bonded portions. The collar is substantially thicker than the adjacent weathershed which it surrounds, providing relief of the electric stresses which would otherwise appear on the outer surface of the weathershed. The collar may include a conductive ring or capacitive foil to further relieve electric stresses experienced by the bushing.

  20. Plasma Interaction with International Space Station High Voltage Solar Arrays

    NASA Technical Reports Server (NTRS)

    Heard, John W.

    2002-01-01

    The International Space Station (ISS) is presently being assembled in low-earth orbit (LEO) operating high voltage solar arrays (-160 V max, -140 V typical with respect to the ambient atmosphere). At the station's present altitude, there exists substantial ambient plasma that can interact with the solar arrays. The biasing of an object to an electric potential immersed in plasma creates a plasma "sheath" or non-equilibrium plasma around the object to mask out the electric fields. A positively biased object can collect electrons from the plasma sheath and the sheath will draw a current from the surrounding plasma. This parasitic current can enter the solar cells and effectively "short out" the potential across the cells, reducing the power that can be generated by the panels. Predictions of collected current based on previous high voltage experiments (SAMPIE (Solar Array Module Plasma Interactions Experiment), PASP+ (Photovoltaic Array Space Power) were on the order of amperes of current. However, present measurements of parasitic current are on the order of several milliamperes, and the current collection mainly occurs during an "eclipse exit" event, i.e., when the space station comes out of darkness. This collection also has a time scale, t approx. 1000 s, that is much slower than any known plasma interaction time scales. The reason for the discrepancy between predictions and present electron collection is not understood and is under investigation by the PCU (Plasma Contactor Unit) "Tiger" team. This paper will examine the potential structure within and around the solar arrays, and the possible causes and reasons for the electron collection of the array.

  1. Plasma Interaction with International Space Station High Voltage Solar Arrays

    NASA Technical Reports Server (NTRS)

    Heard, John W.

    2002-01-01

    The International Space Station (ISS) is presently being assembled in low-earth orbit (LEO) operating high voltage solar arrays (-160 V max, -140 V typical with respect to the ambient atmosphere). At the station's present altitude, there exists substantial ambient plasma that can interact with the solar arrays. The biasing of an object to an electric potential immersed in plasma creates a plasma "sheath" or non-equilibrium plasma around the object to mask out the electric fields. A positively biased object can collect electrons from the plasma sheath and the sheath will draw a current from the surrounding plasma. This parasitic current can enter the solar cells and effectively "short out" the potential across the cells, reducing the power that can be generated by the panels. Predictions of collected current based on previous high voltage experiments (SAMPIE (Solar Array Module Plasma Interactions Experiment), PASP+ (Photovoltaic Array Space Power) were on the order of amperes of current. However, present measurements of parasitic current are on the order of several milliamperes, and the current collection mainly occurs during an "eclipse exit" event, i.e., when the space station comes out of darkness. This collection also has a time scale, t approx. 1000 s, that is much slower than any known plasma interaction time scales. The reason for the discrepancy between predictions and present electron collection is not understood and is under investigation by the PCU (Plasma Contactor Unit) "Tiger" team. This paper will examine the potential structure within and around the solar arrays, and the possible causes and reasons for the electron collection of the array.

  2. Architecture for a High-to-Medium-Voltage Power Converter

    NASA Technical Reports Server (NTRS)

    Vorpenian, Vatche

    2008-01-01

    A power converter now undergoing development is required to operate at a DC input potential ranging between 5.5 and 10 kV and a DC output potential of 400 V at a current up to 25 A. This power converter is also required to be sufficiently compact and reliable to fit and operate within the confines of a high-pressure case to be lowered to several miles (approx.5 km) below the surface of the ocean. The architecture chosen to satisfy these requirements calls for a series/ parallel arrangement of 48 high-frequency, pulse-width-modulation (PWM), transformer-isolation DC-to-DC power converter blocks. The input sides of the converter blocks would be connected in series so that the input potential would be divided among them, each of them being exposed to an input potential of no more than 10 kV/48 . 210 V. The series connection of inputs would also enforce a requirement that all the converter blocks operate at the same input current. The outputs of the converter blocks would be connected in a matrix comprising 6 parallel legs, each leg being a cascade of eight outputs wired in series (see figure). All the converter blocks would be identical within the tolerances of the values of their components. A single voltage feedback loop would regulate the output potential. All the converter blocks would be driven by the same PWM waveform generated by this feedback loop. The power transformer of each converter block would have a unity turns ratio and would be capable of withstanding as much as 10 kVDC between its primary and secondary windings. (Although, in general, the turns ratio could be different from unity, the simplest construction for minimizing leakage and maximizing breakdown voltage is attained at a turns ratio of unity.)

  3. Electric Double-Layer Capacitor Module with Series-Parallel Reconfigurable Cell Voltage Equalizers

    NASA Astrophysics Data System (ADS)

    Uno, Masatoshi; Kukita, Akio; Tanaka, Koji

    When electric double-layer capacitors (EDLCs) are connected in series, cell voltage imbalance that results due to non-uniform cell properties is observed. Cell voltage imbalance should be minimized to prolong cycle lives and maximize the available energy of cells. In this study, we propose a series-parallel reconfigurable cell voltage equalizer that is considered suitable for energy-storage systems using EDLCs instead of traditional secondary batteries as main energy-storage sources. The proposed equalizer requires only EDLCs and switches as its main circuit elements, and it utilizes EDLCs not only for energy storage but also for equalization. An equivalent circuit model using equivalent resistors that can be regarded as an index of equalization speed is developed. Current distribution and cell voltage imbalance during operation are quantitatively generalized. Experimental charge-discharge tests were performed for EDLC modules to demonstrate the performance of the cell voltage equalizer. All the cells in the modules could be charged/discharged uniformly even when a degradation-mimicking cell was intentionally included in the module. The resultant cell voltage imbalances and current distributions were in good agreement with those predicted by mathematical analyses.

  4. Liquid Nitrogen as Fast High Voltage Switching Medium

    NASA Astrophysics Data System (ADS)

    Dickens, J.; Neuber, A.; Haustein, M.; Krile, J.; Krompholz, H.

    2002-12-01

    Compact pulsed power systems require new switching technologies. For high voltages, liquid nitrogen seems to be a suitable switching medium, with high hold-off voltage, low dielectric constant, and no need for pressurized systems as in high pressure gas switches. The discharge behavior in liquid nitrogen, such as breakdown voltages, formative times, current rise as function of voltage, recovery, etc. are virtually unknown, however. The phenomenology of breakdown in liquid nitrogen is investigated with high speed (temporal resolution < 1 ns) electrical and optical diagnostics, in a coaxial system with 50-Ohm impedance. Discharge current and voltage are determined with transmission line type current sensors and capacitive voltage dividers. The discharge luminosity is measured with photomultiplier tubes. Preliminary results of self-breakdown investigations (gap 1 mm, breakdown voltage 44 kV, non-boiling supercooled nitrogen) show a fast (2 ns) transition from an unknown current level to several mA, a long-duration (100 ns) phase with constant current superimposed by ns-spikes, and a final fast transition to the impedance limited current during several nanoseconds. The optical measurements will be expanded toward spectroscopy and high speed photography with the aim of clarifying the overall breakdown mechanisms, including electronic initiation, bubble formation, bubble dynamics, and their role in breakdown, for different electrode geometries (different macroscopic field enhancements).

  5. Determining the mode of high voltage breakdowns in vacuum devices

    SciTech Connect

    Miller, H.C.; Furno, E.J.; Sturtz, J.P.

    1980-08-11

    Devices were constructed which were essentially vacuum diodes equipped with windows allowing observation of high voltage breakdowns. The waveform of the applied voltage was photographed, and the x-ray output was monitored to investigate electrical breakdown in these vacuum diodes. Results indicate that breakdowns may be divided into two types: (1) vacuum (interelectrode) breakdown - characterized by a diffuse moderately bright discharge, a relative slow and smooth voltage collapse, and a large burst of x-rays, and (2) surface (insulator) flashover - characterized by a bright discharge with a very bright filamentary core, a relatively fast and noisy voltage collapse and no x-ray burst. Useful information concerning the type of breakdown in a vacuum device can be obtained by monitoring the voltage (current) waveform and the x-ray output.

  6. An IGBT-based High Voltage, Variable Pulse Width Nanosecond Pulser for Plasma Creation Applications

    NASA Astrophysics Data System (ADS)

    Ziemba, Timothy; Miller, Kenneth; Prager, James; Carscadden, John

    2013-10-01

    Eagle Harbor Technologies (EHT) has developed a modular solid state power supply based on IGBT technology, which can support a wide array of applications. The EHT Integrated Power Module (IPM) incorporates fast gate drive technology, high voltage isolation (~30 kV), fiber optic control, and optional crowbar diodes into a single unit. The EHT IPM can be configured to produce variable pulsed width (20 to 1000 ns), high voltage (>20 kV) high repetition frequency (2 MHz) nanosecond pulser. Nanosecond pulser applications include plasma creation for drag reduction, medical applications, water decontamination, fuel mixing and control of flue gas emissions.

  7. Film size-dependent voltage-modulated magnetism in multiferroic heterostructures

    PubMed Central

    Hu, J.-M.; Shu, L.; Li, Z.; Gao, Y.; Shen, Y.; Lin, Y. H.; Chen, L. Q.; Nan, C. W.

    2014-01-01

    The electric-voltage-modulated magnetism in multiferroic heterostructures, also known as the converse magnetoelectric (ME) coupling, has drawn increasing research interest recently owing to its great potential applications in future low-power, high-speed electronic and/or spintronic devices, such as magnetic memory and computer logic. In this article, based on combined theoretical analysis and experimental demonstration, we investigate the film size dependence of such converse ME coupling in multiferroic magnetic/ferroelectric heterostructures, as well as exploring the interaction between two relating coupling mechanisms that are the interfacial strain and possibly the charge effects. We also briefly discuss some issues for the next step and describe new device prototypes that can be enabled by this technology. PMID:24421375

  8. High voltage, low inductance hydrogen thyratron study program, phase 5

    NASA Astrophysics Data System (ADS)

    Friedman, S.

    1983-08-01

    50 kv per stage dynamic breakdown voltage (DBV) was demonstrated in low inductance multistage hydrogen thyratrons for total voltages up to nearly 200 kv, at pressures consistent with a 10 ns current rise time. High peak current operation has been demonstrated up to 14 ka at 56 kv (the limits of our high current test kit). Bottom stage holdoff the per stage DBV are comparable to that of the best single stage thyratrons, bottom stage holdoff, stage voltage addition, and prefire problems are solved.

  9. Fast recovery, high voltage silicon diodes for AC motor controllers

    NASA Technical Reports Server (NTRS)

    Balodis, V.; Berman, A. H.; Gaugh, C.

    1982-01-01

    The fabrication and characterization of a high voltage, high current, fast recovery silicon diode for use in AC motor controllers, originally developed for NASA for use in avionics power supplies, is presented. The diode utilizes a positive bevel PIN mesa structure with glass passivation and has the following characteristics: peak inverse voltage - 1200 volts, forward voltage at 50 amperes - 1.5 volts, reverse recovery time of 200 nanoseconds. Characterization data for the diode, included in a table, show agreement with design concepts developed for power diodes. Circuit diagrams of the diode are also given.

  10. Multiple high voltage output DC-to-DC power converter

    NASA Technical Reports Server (NTRS)

    Cronin, Donald L. (Inventor); Farber, Bertrand F. (Inventor); Gehm, Hartmut K. (Inventor); Goldin, Daniel S. (Inventor)

    1977-01-01

    Disclosed is a multiple output DC-to-DC converter. The DC input power is filtered and passed through a chopper preregulator. The chopper output is then passed through a current source inverter controlled by a squarewave generator. The resultant AC is passed through the primary winding of a transformer, with high voltages induced in a plurality of secondary windings. The high voltage secondary outputs are each solid-state rectified for passage to individual output loads. Multiple feedback loops control the operation of the chopper preregulator, one being responsive to the current through the primary winding and another responsive to the DC voltage level at a selected output.

  11. Current Status of High Voltage Engineering in Indonesia

    NASA Astrophysics Data System (ADS)

    Hidayat, Syarif; Hidayat, Suwarno; Zoro, Reynaldo

    This paper reports current status of research activities in the field of high voltage engineering and its application in Indonesia. In general, the activities were driven by the application of high voltage (HV) and extra high voltage (EHV) transmission systems in the country. The operation and maintenance of HV and EHV equipments are greatly affected by the tropical climate of the country. This attracts researchers to investigate the effects of tropical climate on HV and EHV equipments. Other researches concentrated on the investigation of physics of tropical lightning and lightning protection. In this paper, applications and problems of high voltage engineering, research activities in universities, as well as in research institutes and utilities are briefly introduced.

  12. High-voltage supplies for corona-electrostatic separators

    SciTech Connect

    Iuga, A.; Neamtu, V.; Suarasan, I.; Morar, R.; Dascalescu, L.

    1995-12-31

    The selection of the high-voltage supply can play an important role in the optimization of electrostatic separation processes. The present work aimed to evaluate the influence of the main high-voltage parameters (waveform, polarity, level) on the efficiency of electroseparation, in the case of insulation-metal granular mixtures. A roll-type laboratory electroseparator was employed for the experimental study and the tests were carried out with granular materials prelevated from the technological flow sheet of a recycling plant for electric wire scraps. The experiments shown the existence of a strong interdependence between the level of the operating voltage and the other electrical parameters. Although the full-wave rectifier allows for lower operating voltages than the half-wave rectifier, its general effectiveness in electroseparation processes is superior. The optimum operating voltage of an electroseparator seems to be slightly lower than the level at which the frequency of the spark discharges tends to exceed 60 min{sup {minus}1}. The oscillograms of the voltage and of the current across the separator proved to be of great use for studying the transition from corona to spark discharges. Good insulation-metal electroseparation can be achieved at either positive or negative polarity of the high-voltage supply, but negative electrode energization is recommended for most industry applications.

  13. Dynamics of laser-guided alternating current high voltage discharges

    NASA Astrophysics Data System (ADS)

    Daigle, J.-F.; Théberge, F.; Lassonde, P.; Kieffer, J.-C.; Fujii, T.; Fortin, J.; Châteauneuf, M.; Dubois, J.

    2013-10-01

    The dynamics of laser-guided alternating current high voltage discharges are characterized using a streak camera. Laser filaments were used to trigger and guide the discharges produced by a commercial Tesla coil. The streaking images revealed that the dynamics of the guided alternating current high voltage corona are different from that of a direct current source. The measured effective corona velocity and the absence of leader streamers confirmed that it evolves in a pure leader regime.

  14. 30 CFR 75.822 - Underground high-voltage longwall cables.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Underground high-voltage longwall cables. 75... Distribution High-Voltage Longwalls § 75.822 Underground high-voltage longwall cables. In addition to the high-voltage cable design specifications in § 75.804 of this part, high-voltage cables for use on longwalls may...

  15. 30 CFR 75.822 - Underground high-voltage longwall cables.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Underground high-voltage longwall cables. 75... Distribution High-Voltage Longwalls § 75.822 Underground high-voltage longwall cables. In addition to the high-voltage cable design specifications in § 75.804 of this part, high-voltage cables for use on longwalls may...

  16. 30 CFR 75.822 - Underground high-voltage longwall cables.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Underground high-voltage longwall cables. 75... Distribution High-Voltage Longwalls § 75.822 Underground high-voltage longwall cables. In addition to the high-voltage cable design specifications in § 75.804 of this part, high-voltage cables for use on longwalls may...

  17. 30 CFR 75.822 - Underground high-voltage longwall cables.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Underground high-voltage longwall cables. 75... Distribution High-Voltage Longwalls § 75.822 Underground high-voltage longwall cables. In addition to the high-voltage cable design specifications in § 75.804 of this part, high-voltage cables for use on longwalls may...

  18. 30 CFR 75.822 - Underground high-voltage longwall cables.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Underground high-voltage longwall cables. 75... Distribution High-Voltage Longwalls § 75.822 Underground high-voltage longwall cables. In addition to the high-voltage cable design specifications in § 75.804 of this part, high-voltage cables for use on longwalls may...

  19. A compact, all solid-state LC high voltage generator.

    PubMed

    Fan, Xuliang; Liu, Jinliang

    2013-06-01

    LC generator is widely applied in the field of high voltage generation technology. A compact and all solid-state LC high voltage generator based on saturable pulse transformer is proposed in this paper. First, working principle of the generator is presented. Theoretical analysis and circuit simulation are used to verify the design of the generator. Experimental studies of the proposed LC generator with two-stage main energy storage capacitors are carried out. And the results show that the proposed LC generator operates as expected. When the isolation inductance is 27 μH, the output voltage is 1.9 times larger than the charging voltage on single capacitor. The multiplication of voltages is achieved. On the condition that the primary energy storage capacitor is charged to 857 V, the output voltage of the generator can reach to 59.5 kV. The step-up ratio is nearly 69. When self breakdown gas gap switch is used as main switch, the rise time of the voltage pulse on load resistor is 8.7 ns. It means that the series-wound inductance in the discharging circuit is very small in this system. This generator can be employed in two different applications.

  20. A compact, all solid-state LC high voltage generator

    NASA Astrophysics Data System (ADS)

    Fan, Xuliang; Liu, Jinliang

    2013-06-01

    LC generator is widely applied in the field of high voltage generation technology. A compact and all solid-state LC high voltage generator based on saturable pulse transformer is proposed in this paper. First, working principle of the generator is presented. Theoretical analysis and circuit simulation are used to verify the design of the generator. Experimental studies of the proposed LC generator with two-stage main energy storage capacitors are carried out. And the results show that the proposed LC generator operates as expected. When the isolation inductance is 27 μH, the output voltage is 1.9 times larger than the charging voltage on single capacitor. The multiplication of voltages is achieved. On the condition that the primary energy storage capacitor is charged to 857 V, the output voltage of the generator can reach to 59.5 kV. The step-up ratio is nearly 69. When self breakdown gas gap switch is used as main switch, the rise time of the voltage pulse on load resistor is 8.7 ns. It means that the series-wound inductance in the discharging circuit is very small in this system. This generator can be employed in two different applications.

  1. High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

    NASA Technical Reports Server (NTRS)

    Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

    2015-01-01

    A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources - a nominal 300-Volt high voltage input bus and a nominal 28-Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power supplies that provide power to the thruster auxiliary supplies, and two parallel 7.5 kilowatt power supplies that are capable of providing up to 15 kilowatts of total power at 300-Volts to 500-Volts to the thruster discharge supply. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall Effect Thruster. The performance of unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate the exceptional performance with full power efficiencies exceeding 97. With a space-qualified silicon carbide or similar high voltage, high efficiency power device, this design could evolve into a flight design for future missions that require high power electric propulsion systems.

  2. High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

    NASA Technical Reports Server (NTRS)

    Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

    2015-01-01

    A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

  3. High-voltage virtual-cathode microwave simulations

    SciTech Connect

    Thode, L.; Snell, C.M.

    1991-01-01

    In contrast to a conventional microwave tube, a virtual-cathode device operates above the space-charge limit where the depth of the space-charge potential is sufficiently large to cause electron reflection. The region associated with electron reflection is referred to as a virtual cathode. Microwaves can be generated through oscillations in the position of the virtual cathode and by reflexing electrons trapped in the potential well formed between the real and virtual cathodes. A virtual-cathode device based on the first mechanism is a vircator while one based on latter mechanism is a reflex diode. A large number of low-voltage virtual-cathode microwave configurations have been investigated. Initial simulations of a high-voltage virtual-cathode device using a self-consistent particle-in-cell code indicated reasonable conversion efficiency with no frequency chirping. The nonchirping character of the high-voltage virtual-cathode device lead to the interesting possibility of locking four very-high-power microwave devices together using the four transmission lines available at Aurora. Subsequently, in support of two high-voltage experiments, simulations were used to investigate the effect of field-emission threshold and velvet position on the cathode; anode and cathode shape; anode-cathode gap spacing; output waveguide radius; diode voltage; a cathode-coaxial-cavity resonator; a high-frequency ac-voltage drive; anode foil scattering and energy loss; and ion emission on the microwave frequency and power. Microwave

  4. Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm.

    PubMed

    Dumas, D C S; Gallacher, K; Rhead, S; Myronov, M; Leadley, D R; Paul, D J

    2014-08-11

    Low-voltage swing (≤1.0 V) high-contrast ratio (6 dB) electro-absorption modulation covering 1460 to 1560 nm wavelength has been demonstrated using Ge/SiGe quantum confined Stark effect (QCSE) diodes grown on a silicon substrate. The heterolayers for the devices were designed using an 8-band k.p Poisson-Schrödinger solver which demonstrated excellent agreement with the experimental results. Modelling and experimental results demonstrate that by changing the quantum well width of the device, low power Ge/SiGe QCSE modulators can be designed to cover the S- and C-telecommunications bands.

  5. Planar LTCC transformers for high voltage flyback converters: Part II.

    SciTech Connect

    Schofield, Daryl; Schare, Joshua M., Ph.D.; Slama, George; Abel, David

    2009-02-01

    This paper is a continuation of the work presented in SAND2007-2591 'Planar LTCC Transformers for High Voltage Flyback Converters'. The designs in that SAND report were all based on a ferrite tape/dielectric paste system originally developed by NASCENTechnoloy, Inc, who collaborated in the design and manufacturing of the planar LTCC flyback converters. The output/volume requirements were targeted to DoD application for hard target/mini fuzing at around 1500 V for reasonable primary peak currents. High voltages could be obtained but with considerable higher current. Work had begun on higher voltage systems and is where this report begins. Limits in material properties and processing capabilities show that the state-of-the-art has limited our practical output voltage from such a small part volume. In other words, the technology is currently limited within the allowable funding and interest.

  6. Design & Fabrication of a High-Voltage Photovoltaic Cell

    SciTech Connect

    Felder, Jennifer; /North Carolina State U. /SLAC

    2012-09-05

    Silicon photovoltaic (PV) cells are alternative energy sources that are important in sustainable power generation. Currently, applications of PV cells are limited by the low output voltage and somewhat low efficiency of such devices. In light of this fact, this project investigates the possibility of fabricating high-voltage PV cells on float-zone silicon wafers having output voltages ranging from 50 V to 2000 V. Three designs with different geometries of diffusion layers were simulated and compared in terms of metal coverage, recombination, built-in potential, and conduction current density. One design was then chosen and optimized to be implemented in the final device design. The results of the simulation serve as a feasibility test for the design concept and provide supportive evidence of the effectiveness of silicon PV cells as high-voltage power supplies.

  7. Low Voltage Electrowetting on Ferroelectric PVDF-HFP Insulator with Highly Tunable Contact Angle Range.

    PubMed

    Sawane, Yogesh B; Ogale, Satishchandra B; Banpurkar, Arun G

    2016-09-14

    We demonstrate a consistent electrowetting response on ferroelectric poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) insulator covered with a thin Teflon AF layer. This bilayer exhibits a factor of 3 enhancement in the contact angle modulation compared to that of conventional single-layered Teflon AF dielectric. On the basis of the proposed model the enhancement is attributed to the high value of effective dielectric constant (εeff ≈ 6) of the bilayer. Furthermore, the bilayer dielectric exhibits a hysteresis-free contact angle modulation over many AC voltage cycles. But the contact angle modulation for DC voltage shows a hysteresis because of the field-induced residual polarization in the ferroelectric layer. Finally, we show that a thin bilayer exhibits contact angle modulation of Δθ (U) ≈ 60° at merely 15 V amplitude of AC voltage indicating a potential dielectric for practical low voltage electrowetting applications. A proof of concept confirms electrowetting based rapid mixing of a fluorescent dye in aqueous glycerol solution for 15 V AC signal.

  8. New High Voltage Ceramic Capacitors for Power Electronics

    NASA Astrophysics Data System (ADS)

    Laville, H.; Fabre, M.

    2014-08-01

    This paper presents the characteristics and performances of a new range of high voltage ceramic capacitors manufactured using a new ceramic material. This dielectric allows to get under working voltage the same capacitance values than using an X7R material with the advantage compared to X7R of a very low dissipation factor (less than 5.10-4). What makes these capacitors to be ideally suited for power applications where heat dissipation may be detrimental for performances and reliability.

  9. High voltage series connected tandem junction solar battery

    DOEpatents

    Hanak, Joseph J.

    1982-01-01

    A high voltage series connected tandem junction solar battery which comprises a plurality of strips of tandem junction solar cells of hydrogenated amorphous silicon having one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon, arranged in a tandem configuration, can have the same bandgap or differing bandgaps. The tandem junction strip solar cells are series connected to produce a solar battery of any desired voltage.

  10. Surface effects in high voltage silicon solar cells

    NASA Technical Reports Server (NTRS)

    Meulenberg, A.; Arndt, R. A.

    1982-01-01

    The surface of low-resistivity silicon solar cells appears to be a major source of dark diffusion current. This region, consisting of the interface and the adjacent heavily doped layer, therefore, prevents attainment of the high open-circuit voltages expected from these cells. This paper describes the experimental effort carried out to reduce the various contributions of dark current from the surface. Analysis of results from this effort points to means of improving cell voltages by changing processing and structures.

  11. A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer

    NASA Astrophysics Data System (ADS)

    Luo, Xiao-Rong; Wang, Yuan-Gang; Deng, Hao; Florin, Udrea

    2010-07-01

    A novel partial silicon-on-insulator (PSOI) high voltage device with a low-k (relative permittivity) dielectric buried layer (LK PSOI) and its breakdown mechanism are presented and investigated by MEDICI. At a low k value the electric field strength in the dielectric buried layer (EI) is enhanced and a Si window makes the substrate share the vertical drop, resulting in a high vertical breakdown voltage; in the lateral direction, a high electric field peak is introduced at the Si window, which modulates the electric field distribution in the SOI layer; consequently, a high breakdown voltage (BV) is obtained. The values of EI and BV of LK PSOI with kI = 2 on a 2 μm thick SOI layer over 1 μm thick buried layer are enhanced by 74% and 19%, respectively, compared with those of the conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect.

  12. Voltage-gated sodium channel modulation by sigma-receptors in cardiac myocytes and heterologous systems.

    PubMed

    Johannessen, Molly; Ramachandran, Subramaniam; Riemer, Logan; Ramos-Serrano, Andrea; Ruoho, Arnold E; Jackson, Meyer B

    2009-05-01

    The sigma-receptor, a broadly distributed integral membrane protein with a novel structure, is known to modulate various voltage-gated K(+) and Ca(2+) channels through a mechanism that involves neither G proteins nor phosphorylation. The present study investigated the modulation of the heart voltage-gated Na(+) channel (Na(v)1.5) by sigma-receptors. The sigma(1)-receptor ligands [SKF-10047 and (+)-pentazocine] and sigma(1)/sigma(2)-receptor ligands (haloperidol and ditolylguanidine) all reversibly inhibited Na(v)1.5 channels to varying degrees in human embryonic kidney 293 (HEK-293) cells and COS-7 cells, but the sigma(1)-receptor ligands were less effective in COS-7 cells. The same four ligands also inhibited Na(+) current in neonatal mouse cardiac myocytes. In sigma(1)-receptor knockout myocytes, the sigma(1)-receptor-specific ligands were far less effective in modulating Na(+) current, but the sigma(1)/sigma(2)-receptor ligands modulated Na(+) channels as well as in wild type. Photolabeling with the sigma(1)-receptor photoprobe [(125)I]-iodoazidococaine demonstrated that sigma(1)-receptors were abundant in heart and HEK-293 cells, but scarce in COS-7 cells. This difference was consistent with the greater efficacy of sigma(1)-receptor-specific ligands in HEK-293 cells than in COS-7 cells. sigma-Receptors modulated Na(+) channels despite the omission of GTP and ATP from the patch pipette solution. sigma-Receptor-mediated inhibition of Na(+) current had little if any voltage dependence and produced no change in channel kinetics. Na(+) channels represent a new addition to the large number of voltage-gated ion channels modulated by sigma-receptors. The modulation of Na(v)1.5 channels by sigma-receptors in the heart suggests an important pathway by which drugs can alter cardiac excitability and rhythmicity.

  13. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad...

  14. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad...

  15. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad...

  16. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad...

  17. N-cadherin modulates voltage activated calcium influx via RhoA, p120-catenin, and myosinactin interaction

    PubMed Central

    Marrs, Glen S.; Theisen, Christopher S.; Brusés, Juan L.

    2010-01-01

    N-cadherin is a transmembrane adhesion receptor that contributes to neuronal development and synapse formation through homophilic interactions that provide structural-adhesive support to contacts between cell membranes. In addition, N-cadherin homotypic binding may initiate cell signaling that regulates neuronal physiology. In this study, we investigated signaling capabilities of N-cadherin that control voltage activated calcium influx. Using whole-cell voltage clamp recording of isolated inward calcium currents in freshly isolated chick ciliary ganglion neurons we show that the juxtamembrane region of N-cadherin cytoplasmic domain regulates high-threshold voltage activated calcium currents by interacting with p120-catenin and activating RhoA. This regulatory mechanism requires myosin interaction with actin. Furthermore, N-cadherin homophilic binding enhanced voltage activated calcium current amplitude in dissociated neurons that have already developed mature synaptic contacts in vivo. The increase in calcium current amplitude was not affected by brefeldin A suggesting that the effect is caused via direct channel modulation and not by increasing channel expression. In contrast, homotypic N-cadherin interaction failed to regulate calcium influx in freshly isolated immature neurons. However, RhoA inhibitors enhanced calcium current amplitude in these immature neurons, suggesting that the inhibitory effect of RhoA on calcium entry is regulated during neuronal development and synapse maturation. These results indicate that N-cadherin modulates voltage activated calcium entry by a mechanism that involves RhoA activity and its downstream effects on the cytoskeleton, and suggest that N-cadherin provides support for synaptic maturation and sustained synaptic activity by facilitating voltage activated calcium influx. PMID:19162191

  18. Selective pressure modulation of synaptic voltage-dependent calcium channels-involvement in HPNS mechanism.

    PubMed

    Aviner, Ben; Gradwohl, Gideon; Bliznyuk, Alice; Grossman, Yoram

    2016-10-01

    Exposure to hyperbaric pressure (HP) exceeding 100 msw (1.1 MPa) is known to cause a constellation of motor and cognitive impairments named high-pressure neurological syndrome (HPNS), considered to be the result of synaptic transmission alteration. Long periods of repetitive HP exposure could be an occupational risk for professional deep-sea divers. Previous studies have indicated the modulation of presynaptic Ca(2+) currents based on synaptic activity modified by HP. We have recently demonstrated that currents in genetically identified cellular voltage-dependent Ca(2+) channels (VDCCs), CaV 1.2 and CaV 3.2 are selectively affected by HP. This work further elucidates the HPNS mechanism by examining HP effect on Ca(2+) currents in neuronal VDCCs, CaV 2.2 and CaV 2.1, which are prevalent in presynaptic terminals, expressed in Xenopus oocytes. HP augmented the CaV 2.2 current amplitude, much less so in a channel variation containing an additional modulatory subunit, and had almost no effect on the CaV 2.1 currents. HP differentially affected the channels' kinetics. It is, therefore, suggested that HPNS signs and symptoms arise, at least in part, from pressure modulation of various VDCCs. © 2016 The Authors. Journal of Cellular and Molecular Medicine published by John Wiley & Sons Ltd and Foundation for Cellular and Molecular Medicine.

  19. High voltage switch triggered by a laser-photocathode subsystem

    SciTech Connect

    Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

    2013-01-08

    A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

  20. Molecular Dynamics Simulations of Voltage-Gated Cation Channels: Insights on Voltage-Sensor Domain Function and Modulation

    PubMed Central

    Delemotte, Lucie; Klein, Michael L.; Tarek, Mounir

    2012-01-01

    Since their discovery in the 1950s, the structure and function of voltage-gated cation channels (VGCC) has been largely understood thanks to results stemming from electrophysiology, pharmacology, spectroscopy, and structural biology. Over the past decade, computational methods such as molecular dynamics (MD) simulations have also contributed, providing molecular level information that can be tested against experimental results, thereby allowing the validation of the models and protocols. Importantly, MD can shed light on elements of VGCC function that cannot be easily accessed through “classical” experiments. Here, we review the results of recent MD simulations addressing key questions that pertain to the function and modulation of the VGCC’s voltage-sensor domain (VSD) highlighting: (1) the movement of the S4-helix basic residues during channel activation, articulating how the electrical driving force acts upon them; (2) the nature of the VSD intermediate states on transitioning between open and closed states of the VGCC; and (3) the molecular level effects on the VSD arising from mutations of specific S4 positively charged residues involved in certain genetic diseases. PMID:22654756

  1. Statistical characteristics of transient enclosure voltage in ultra-high-voltage gas-insulated switchgear

    NASA Astrophysics Data System (ADS)

    Cai, Yuanji; Guan, Yonggang; Liu, Weidong

    2017-06-01

    Transient enclosure voltage (TEV), which is a phenomenon induced by the inner dielectric breakdown of SF6 during disconnector operations in a gas-insulated switchgear (GIS), may cause issues relating to shock hazard and electromagnetic interference to secondary equipment. This is a critical factor regarding the electromagnetic compatibility of ultra-high-voltage (UHV) substations. In this paper, the statistical characteristics of TEV at UHV level are collected from field experiments, and are analyzed and compared to those from a repeated strike process. The TEV waveforms during disconnector operations are recorded by a self-developed measurement system first. Then, statistical characteristics, such as the pulse number, duration of pulses, frequency components, magnitude and single pulse duration, are extracted. The transmission line theory is introduced to analyze the TEV and is validated by the experimental results. Finally, the relationship between the TEV and the repeated strike process is analyzed. This proves that the pulse voltage of the TEV is proportional to the corresponding breakdown voltage. The results contribute to the definition of the standard testing waveform of the TEV, and can aid the protection of electronic devices in substations by minimizing the threat of this phenomenon.

  2. A dual-mode phase-shift modulation control scheme for voltage multiplier based X-ray power supply

    NASA Astrophysics Data System (ADS)

    Iqbal, S.; Besar, R.; Venkataseshaiah, C.

    2010-05-01

    This paper proposes a dual-mode phase-shift modulation control scheme for series resonant inverter fed voltage multiplier (VM) based X-ray power supply. In this control scheme the outputs voltage of two parallel connected series resonant inverters are mixed before supplying to VM circuit. The output voltage of the power supply is controlled by varying the phase-shift between the output voltages of two inverters. In order to achieve quick rise of output voltage, the power supply is started with zero phase-shift and as the output voltage reaches 90% of the target voltage, the phase-shift is increased to a value which corresponds to target output voltage to prevent overshoot. The proposed control scheme has been shown to have good performance. Experimental results based on the scaled-down laboratory prototype are presented to validate the effectiveness of proposed dual-mode phase shift modulation control scheme.

  3. Experimental investigation of SDBD plasma actuator driven by AC high voltage with a superimposed positive pulse bias voltage

    NASA Astrophysics Data System (ADS)

    Qi, Xiao-Hua; Yan, Hui-Jie; Yang, Liang; Hua, Yue; Ren, Chun-Sheng

    2017-08-01

    In this work, a driven voltage consisting of AC high voltage with a superimposed positive pulse bias voltage ("AC+ Positive pulse bias" voltage) is adopted to study the performance of a surface dielectric barrier discharge plasma actuator under atmospheric conditions. To compare the performance of the actuator driven by single-AC voltage and "AC+ Positive pulse bias" voltage, the actuator-induced thrust force and power consumption are measured as a function of the applied AC voltage, and the measured results indicate that the thrust force can be promoted significantly after superimposing the positive pulse bias voltage. The physical mechanism behind the thrust force changes is analyzed by measuring the optical properties, electrical characteristics, and surface potential distribution. Experimental results indicate that the glow-like discharge in the AC voltage half-cycle, next to the cycle where a bias voltage pulse has been applied, is enhanced after applying the positive pulse bias voltage, and this perhaps is the main reason for the thrust force increase. Moreover, surface potential measurement results reveal that the spatial electric field formed by the surface charge accumulation after positive pulse discharge can significantly affect the applied external electric field, and this perhaps can be responsible for the experimental phenomenon that the decrease of thrust force is delayed by pulse bias voltage action after the filament discharge occurs in the glow-like discharge region. The schlieren images further verify that the actuator-induced airflow velocity increases with the positive pulse voltage.

  4. Optimal high-voltage energization of corona-electrostatic separators

    SciTech Connect

    Iuga, A.; Neamtu, V.; Suarasan, I.; Morar, R.; Dascalescu, L.

    1998-03-01

    The selection of the high-voltage supply can play an important role in the optimization of electrostatic separation processes. This paper aims to evaluate the influence of the main high-voltage parameters (waveform, polarity, level) on the efficiency of electrostatic separation, in the case of insulation-metal granular mixtures. A roll-type laboratory high-tension separator was employed for the experimental study, and the tests were carried out with samples of granular materials taken from the technological flowsheet of a recycling plant for electric wire scraps. The oscillograms of the voltage and of the current across the separator proved to be of great use for studying the transition from corona to spark discharges. The experiments, performed under various operating conditions (roll speed, roll radius, high-voltage level, interelectrode distance), show the existence of a strong interdependence between these parameters, the frequency of spark discharges, and the efficiency of the separation process. The reported results suggest that monitoring the frequency of spark discharges, and the efficiency of the separation process. The reported results suggest that monitoring the frequency of the spark discharges could be of use for controlling the optimum operating voltage for a given electrostatic separation application. Although the full-wave rectifier allows for lower operating voltages than the half-wave rectifier, its general effectiveness in electrostatic separation processes is superior. Good insulation-metal electrostatic separation can be achieved at either positive or negative polarity of the high-voltage supply, but negative electrode energization is recommended for most industrial applications. The methodology proposed in this paper might be successfully employed for establishing the optimal operating conditions of electrode energization for other applications, such as electrostatic precipitation, plasma chemical purification of gases, or charge

  5. High-Capacity, High-Voltage Composite Oxide Cathode Materials

    NASA Technical Reports Server (NTRS)

    Hagh, Nader M.

    2015-01-01

    This SBIR project integrates theoretical and experimental work to enable a new generation of high-capacity, high-voltage cathode materials that will lead to high-performance, robust energy storage systems. At low operating temperatures, commercially available electrode materials for lithium-ion (Li-ion) batteries do not meet energy and power requirements for NASA's planned exploration activities. NEI Corporation, in partnership with the University of California, San Diego, has developed layered composite cathode materials that increase power and energy densities at temperatures as low as 0 degC and considerably reduce the overall volume and weight of battery packs. In Phase I of the project, through innovations in the structure and morphology of composite electrode particles, the partners successfully demonstrated an energy density exceeding 1,000 Wh/kg at 4 V at room temperature. In Phase II, the team enhanced the kinetics of Li-ion transport and electronic conductivity at 0 degC. An important feature of the composite cathode is that it has at least two components that are structurally integrated. The layered material is electrochemically inactive; however, upon structural integration with a spinel material, the layered material can be electrochemically activated and deliver a large amount of energy with stable cycling.

  6. Gaseous insulators for high voltage electrical equipment

    DOEpatents

    Christophorou, Loucas G.; James, David R.; Pace, Marshall O.; Pai, Robert Y.

    1979-01-01

    Gaseous insulators comprise compounds having high attachment cross sections for electrons having energies in the 0-1.3 electron volt range. Multi-component gaseous insulators comprise compounds and mixtures having overall high electron attachment cross sections in the 0-1.3 electron volt range and moderating gases having high cross sections for inelastic interactions with electrons of energies 1-4 electron volts. Suitable electron attachment components include hexafluorobutyne, perfluorobutene-2, perfluorocyclobutane, perfluorodimethylcyclobutane, perfluorocyclohexene, perfluoromethylcyclohexane, hexafluorobutadiene, perfluoroheptene-1 and hexafluoroazomethane. Suitable moderating gases include N.sub.2, CO, CO.sub.2 and H.sub.2. The gaseous insulating mixture can also contain SF.sub.6, perfluoropropane and perfluorobenzene.

  7. Gaseous insulators for high voltage electrical equipment

    DOEpatents

    Christophorou, Loucas G.; James, David R.; Pace, Marshall O.; Pai, Robert Y.

    1981-01-01

    Gaseous insulators comprise compounds having high attachment cross sections for electrons having energies in the 0-1.3 electron volt range. Multi-component gaseous insulators comprise compounds and mixtures having overall high electron attachment cross sections in the 0-1.3 electron volt range and moderating gases having high cross sections for inelastic interactions with electrons of energies 1-4 electron volts. Suitable electron attachment components include hexafluorobutyne, perfluorobutene-2, perfluorocyclobutane, perfluorodimethylcyclobutane, perfluorocyclohexene, perfluoromethylcyclohexane, hexafluorobutadiene, perfluoroheptene-1 and hexafluoroazomethane. Suitable moderating gases include N.sub.2, CO, CO.sub.2 and H.sub.2. The gaseous insulating mixture can also contain SF.sub.6, perfluoropropane and perfluorobenzene.

  8. A high voltage nanosecond pulser with independently adjustable output voltage, pulse width, and pulse repetition frequency

    NASA Astrophysics Data System (ADS)

    Prager, James; Ziemba, Timothy; Miller, Kenneth; Carscadden, John; Slobodov, Ilia

    2014-10-01

    Eagle Harbor Technologies (EHT) is developing a high voltage nanosecond pulser capable of generating microwaves and non-equilibrium plasmas for plasma medicine, material science, enhanced combustion, drag reduction, and other research applications. The EHT nanosecond pulser technology is capable of producing high voltage (up to 60 kV) pulses (width 20-500 ns) with fast rise times (<10 ns) at high pulse repetition frequency (adjustable up to 100 kHz) for CW operation. The pulser does not require the use of saturable core magnetics, which allows for the output voltage, pulse width, and pulse repetition frequency to be fully adjustable, enabling researchers to explore non-equilibrium plasmas over a wide range of parameters. A magnetic compression stage can be added to improve the rise time and drive lower impedance loads without sacrificing high pulse repetition frequency operation. Work supported in part by the US Navy under Contract Number N00014-14-P-1055 and the US Air Force under Contract Number FA9550-14-C-0006.

  9. Flufenamic acid decreases neuronal excitability through modulation of voltage-gated sodium channel gating.

    PubMed

    Yau, Hau-Jie; Baranauskas, Gytis; Martina, Marco

    2010-10-15

    The electrophysiological phenotype of individual neurons critically depends on the biophysical properties of the voltage-gated channels they express. Differences in sodium channel gating are instrumental in determining the different firing phenotypes of pyramidal cells and interneurons; moreover, sodium channel modulation represents an important mechanism of action for many widely used CNS drugs. Flufenamic acid (FFA) is a non-steroidal anti-inflammatory drug that has been long used as a blocker of calcium-dependent cationic conductances. Here we show that FFA inhibits voltage-gated sodium currents in hippocampal pyramidal neurons; this effect is dose-dependent with IC(50) = 189 μm. We used whole-cell and nucleated patch recordings to investigate the mechanisms of FFA modulation of TTX-sensitive voltage-gated sodium current. Our data show that flufenamic acid slows down the inactivation process of the sodium current, while shifting the inactivation curve ~10 mV toward more hyperpolarized potentials. The recovery from inactivation is also affected in a voltage-dependent way, resulting in slower recovery at hyperpolarized potentials. Recordings from acute slices demonstrate that FFA reduces repetitive- and abolishes burst-firing in CA1 pyramidal neurons. A computational model based on our data was employed to better understand the mechanisms of FFA action. Simulation data support the idea that FFA acts via a novel mechanism by reducing the voltage dependence of the sodium channel fast inactivation rates. These effects of FFA suggest that it may be an effective anti-epileptic drug.

  10. Miniaturized, Iter-Free, High Voltage DC/DC Converter for Space Applications

    NASA Astrophysics Data System (ADS)

    D'Argliano, S.; Fontani, L.; Petroni, F.; Vitale, G.; Zaccheo, N.

    2008-09-01

    Several space equipments (i.e. neutralizers, phototubes and other detectors) need to be supplied with low current by a very stable, low noise, High Voltage power supply. The aim of the paper is to present a miniaturized, Itar-free (International Traffic in Arms Regulations free) HV module meeting the main requirements in terms of efficiency, noiseless and radiation tolerance.The features of a first Qualification Model are presented; the QM performances in terms of efficiency/power consumption, mass/volume budgets, line and load regulation, input voltage range, output overload protections functionality are thoroughly discussed.

  11. Recent advances of high voltage AlGaN/GaN power HFETs

    NASA Astrophysics Data System (ADS)

    Uemoto, Yasuhiro; Ueda, Tetsuzo; Tanaka, Tsuyoshi; Ueda, Daisuke

    2009-02-01

    We review our recent advances of GaN-based high voltage power transistors. These are promising owing to low on-state resistance and high breakdown voltage taking advantages of superior material properties. However, there still remain a couple of technical issues to be solved for the GaN devices to replace the existing Si-based power devices. The most critical issue is to achieve normally-off operation which is strongly desired for the safety operation, however, it has been very difficult because of the built-in polarization electric field. Our new device called GIT (Gate Injection Transistor) utilizing conductivity modulation successfully achieves the normally-off operation keeping low on-state resistance. The fabricated GIT on a Si substrate exhibits threshold voltage of +1.0V. The obtained on-state resistance and off-state breakdown voltage were 2.6mΩ•cm2 and 800V, respectively. Remaining technical issue is to further increase the breakdown voltage. So far, the reported highest off-state breakdown voltage of AlGaN/GaN HFETs has been 1900V. Overcoming these issues by a novel device structure, we have demonstrated the world highest breakdown voltages of 10400V using thick poly-crystalline AlN as a passivation film and Via-holes through sapphire which enable very efficient layout of the lateral HFET array avoiding any undesired breakdown of passivation films. Since conventional wet or dry etching cannot be used for chemically stable sapphire, high power pulsed laser is used to form the via-holes. The presented GaN power devices demonstrate that GaN is advantageous for high voltage power switching applications replacing currently used Si-based power MOSFETs and IGBTs.

  12. Multiloop Rapid-Rise/Rapid Fall High-Voltage Power Supply

    NASA Technical Reports Server (NTRS)

    Bearden, Douglas

    2007-01-01

    A proposed multiloop power supply would generate a potential as high as 1.25 kV with rise and fall times <100 s. This power supply would, moreover, be programmable to generate output potentials from 20 to 1,250 V and would be capable of supplying a current of at least 300 A at 1,250 V. This power supply is intended to be a means of electronic shuttering of a microchannel plate that would be used to intensify the output of a charge-coupled-device imager to obtain exposure times as short as 1 ms. The basic design of this power supply could also be adapted to other applications in which high voltages and high slew rates are needed. At the time of reporting the information for this article, there was no commercially available power supply capable of satisfying the stated combination of voltage, rise-time, and fall-time requirements. The power supply would include a preregulator that would be used to program a voltage 1/30 of the desired output voltage. By means of a circuit that would include a pulse-width modulator (PWM), two voltage doublers, and a transformer having two primary and two secondary windings, the preregulator output voltage would be amplified by a factor of 30. A resistor would limit the current by controlling a drive voltage applied to field-effect transistors (FETs) during turn-on of the PWM. Two feedback loops would be used to regulate the high output voltage. A pulse transformer would be used to turn on four FETs to short-circuit output capacitors when the outputs of the PWM were disabled. Application of a 0-to-5-V square to a PWM shut-down pin would cause a 20-to-1,250-V square wave to appear at the output.

  13. High-voltage pulsed generator for dynamic fragmentation of rocks.

    PubMed

    Kovalchuk, B M; Kharlov, A V; Vizir, V A; Kumpyak, V V; Zorin, V B; Kiselev, V N

    2010-10-01

    A portable high-voltage (HV) pulsed generator has been designed for rock fragmentation experiments. The generator can be used also for other technological applications. The installation consists of low voltage block, HV block, coaxial transmission line, fragmentation chamber, and control system block. Low voltage block of the generator, consisting of a primary capacitor bank (300 μF) and a thyristor switch, stores pulse energy and transfers it to the HV block. The primary capacitor bank stores energy of 600 J at the maximum charging voltage of 2 kV. HV block includes HV pulsed step up transformer, HV capacitive storage, and two electrode gas switch. The following technical parameters of the generator were achieved: output voltage up to 300 kV, voltage rise time of ∼50 ns, current amplitude of ∼6 kA with the 40 Ω active load, and ∼20 kA in a rock fragmentation regime (with discharge in a rock-water mixture). Typical operation regime is a burst of 1000 pulses with a frequency of 10 Hz. The operation process can be controlled within a wide range of parameters. The entire installation (generator, transmission line, treatment chamber, and measuring probes) is designed like a continuous Faraday's cage (complete shielding) to exclude external electromagnetic perturbations.

  14. High performance silicon optical modulators

    NASA Astrophysics Data System (ADS)

    Reed, G. T.; Thomson, D. J.; Gardes, F. Y.; Hu, Y.; Owens, N.; Debnath, K.; O'Faolain, L.; Krauss, T. F.; Lever, L.; Ikonic, Z.; Kelsall, R. W.; Myronov, M.; Leadley, D. R.; Marko, I. P.; Sweeney, S. J.; Cox, D. C.; Brimont, A.; Sanchis, P.; Duan, G.-H.; Le Liepvre, A.; Jany, C.; Lamponi, M.; Make, D.; Lelarge, F.; Fedeli, J. M.; Messaoudene, S.; Keyvaninia, S.; Roelkens, G.; Van Thourhout, D.; Liu, S.; Yang, X.; Petropoulos, P.

    2012-11-01

    In this work we present results from high performance silicon optical modulators produced within the two largest silicon photonics projects in Europe; UK Silicon Photonics (UKSP) and HELIOS. Two conventional MZI based optical modulators featuring novel self-aligned fabrication processes are presented. The first is based in 400nm overlayer SOI and demonstrates 40Gbit/s modulation with the same extinction ratio for both TE and TM polarisations, which relaxes coupling requirements to the device. The second design is based in 220nm SOI and demonstrates 40Gbits/s modulation with a 10dB extinction ratio as well modulation at 50Gbit/s for the first time. A ring resonator based optical modulator, featuring FIB error correction is presented. 40Gbit/s, 32fJ/bit operation is also shown from this device which has a 6um radius. Further to this slow light enhancement of the modulation effect is demonstrated through the use of both convention photonic crystal structures and corrugated waveguides. Fabricated conventional photonic crystal modulators have shown an enhancement factor of 8 over the fast light case. The corrugated waveguide device shows modulation efficiency down to 0.45V.cm compared to 2.2V.cm in the fast light case. 40Gbit/s modulation is demonstrated with a 3dB modulation depth from this device. Novel photonic crystal based cavity modulators are also demonstrated which offer the potential for low fibre to fibre loss. In this case preliminary modulation results at 1Gbit/s are demonstrated. Ge/SiGe Stark effect devices operating at 1300nm are presented. Finally an integrated transmitter featuring a III-V source and MZI modulator operating at 10Gbit/s is presented.

  15. Improved Lifetime High Voltage Switch Electrode.

    DTIC Science & Technology

    2014-09-26

    and T.R. Burkes, "Erosion of Spark Gap Electrodes", IEEE Trans. Plasma Sci., PS-8, 149, (1980). 5. L.B. Gordon, M. Kristiansen, M.O. Hagler, H.C...Kirbie, R.M. Ness, L.L. Hatfield and 3.N. Marx, "Material Studies in a High Energy Spark Gap", IEEE Trans. Plasma Sci., PS-10, 286, (1982). 6. A.L...identify by block number) Spark switches, electrodes, ion implantation. _. / 20. ABSTRACT (Cqntnu* on ,.as maide Ii necossery and Identify by block number

  16. High voltage stability performance of a gamma ray detection device

    NASA Astrophysics Data System (ADS)

    Abdullah, Nor Arymaswati; Lombigit, Lojius; Rahman, Nur Aira Abd

    2014-02-01

    An industrial grade digital radiation survey meter device is currently being developed at Malaysian Nuclear Agency. This device used a cylindrical type Geiger Mueller (GM) which acts as a detector. GM detector operates at relatively high direct current voltages depend on the type of GM tube. This thin/thick walled cylindrical type of GM tube operates at 450-650 volts range. Proper value and stability performance of high voltage are important parameters to ensure that this device give a reliable radiation dose measurement. This paper will present an assessment of the stability and performance of the high voltage supply for radiation detector. The assessment is performed using System Identification tools box in MATLAB and mathematical statistics.

  17. High voltage stability performance of a gamma ray detection device

    SciTech Connect

    Abdullah, Nor Arymaswati; Lombigit, Lojius; Rahman, Nur Aira Abd

    2014-02-12

    An industrial grade digital radiation survey meter device is currently being developed at Malaysian Nuclear Agency. This device used a cylindrical type Geiger Mueller (GM) which acts as a detector. GM detector operates at relatively high direct current voltages depend on the type of GM tube. This thin/thick walled cylindrical type of GM tube operates at 450-650 volts range. Proper value and stability performance of high voltage are important parameters to ensure that this device give a reliable radiation dose measurement. This paper will present an assessment of the stability and performance of the high voltage supply for radiation detector. The assessment is performed using System Identification tools box in MATLAB and mathematical statistics.

  18. Cleaning High-Voltage Equipment With Corncob Grit

    NASA Technical Reports Server (NTRS)

    Caveness, C.

    1986-01-01

    High electrical resistance of particles makes power shutdown unnecessary. New, inexpensive method of cleaning high-voltage electrical equipment uses plentiful agricultural product - corncob grit. Method removes dirt and debris from transformers, circuit breakers, and similar equipment. Suitable for utilities, large utility customers, and electrical-maintenance services.

  19. Cleaning High-Voltage Equipment With Corncob Grit

    NASA Technical Reports Server (NTRS)

    Caveness, C.

    1986-01-01

    High electrical resistance of particles makes power shutdown unnecessary. New, inexpensive method of cleaning high-voltage electrical equipment uses plentiful agricultural product - corncob grit. Method removes dirt and debris from transformers, circuit breakers, and similar equipment. Suitable for utilities, large utility customers, and electrical-maintenance services.

  20. High-Voltage, High-Impedance Ion Beam Production

    DTIC Science & Technology

    2009-06-01

    20375 USA ∗ Work supported by the US Office of Naval Research ξ email : ddh...voltage adder at typical parameters of 4 MV, 360 kA, and 70-90-kA ion current. These results are consistent with theory and with LSP calculations. This...fluorine via 19F(p,αγ)16O, from Ref. 2 This paper describes ion-beam diode experiments on the Mercury inductive voltage adder at ~4-MV, ~360-kA

  1. Low half-wave voltage Y-branch electro-optic polymer modulator based on side-chain polyurethane-imide

    NASA Astrophysics Data System (ADS)

    Tang, Jie; Wang, Long-De; Li, Ruo-Zhou; Zhang, Qiang; Zhang, Tong

    2016-06-01

    A Y-branch electro-optic (EO) polymer modulator has been designed and fabricated. High performance side-chain polyurethane-imide (PUI) with a high EO coefficient of larger than 50 pm/V and a moderate glass-transition temperature (Tg) of 206∘C is used as EO polymer core layer of the modulator. The fabricated phase modulator exhibits a low half-wave voltage of 1.94 V at 1550 nm in single arm modulation with 1 cm EO interaction length and 2 cm total length. The results show that the modulator fabricated by side-chain PUI EO materials possesses potential applications in low driving voltage and low cost optical systems.

  2. High voltage electron microscopy of lunar samples

    NASA Technical Reports Server (NTRS)

    Fernandez-Moran, H.

    1973-01-01

    Lunar pyroxenes from Apollo 11, 12, 14, and 15 were investigated. The iron-rich and magnesium-rich pyroxene specimens were crushed to a grain size of ca. 50 microns and studied by a combination of X-ray and electron diffraction, electron microscopy, 57 Fe Mossbauer spectroscopy and X-ray crystallography techniques. Highly ordered, uniform electron-dense bands, corresponding to exsolution lamellae, with average widths of ca. 230A to 1000A dependent on the source specimen were observed. These were?qr separated by wider, less-dense interband spacings with average widths of ca. 330A to 3100A. In heating experiments, splitting of the dense bands into finer structures, leading finally to obliteration of the exsolution lamellae was recorded. The extensive exsolution is evidence for significantly slower cooling rates, or possibly annealing, at temperatures in the subsolidus range, adding evidence that annealing of rock from the surface of the moon took place at ca. 600 C. Correlation of the band structure with magnetic ordering at low temperatures and iron clustering within the bands was studied.

  3. High-Voltage, Low-Power BNC Feedthrough Terminator

    NASA Technical Reports Server (NTRS)

    Bearden, Douglas

    2012-01-01

    This innovation is a high-voltage, lowpower BNC (Bayonet Neill-Concelman) feedthrough that enables the user to terminate an instrumentation cable properly while connected to a high voltage, without the use of a voltage divider. This feedthrough is low power, which will not load the source, and will properly terminate the instrumentation cable to the instrumentation, even if the cable impedance is not constant. The Space Shuttle Program had a requirement to measure voltage transients on the orbiter bus through the Ground Lightning Measurement System (GLMS). This measurement has a bandwidth requirement of 1 MHz. The GLMS voltage measurement is connected to the orbiter through a DC panel. The DC panel is connected to the bus through a nonuniform cable that is approximately 75 ft (approximately equal to 23 m) long. A 15-ft (approximately equal to 5-m), 50-ohm triaxial cable is connected between the DC panel and the digitizer. Based on calculations and simulations, cable resonances and reflections due to mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. A voltage divider at the DC panel, and terminating the 50-ohm cable properly, would eliminate this issue. Due to implementation issues, an alternative design was needed to terminate the cable properly without the use of a voltage divider. Analysis shows how the cable resonances and reflections due to the mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. After simulating a dampening circuit located at the digitizer, simulations were performed to show how the cable resonances were dampened and the accuracy was improved significantly. Test cables built to verify simulations were accurate. Since the dampening circuit is low power, it can be packaged in a BNC feedthrough.

  4. The research of high voltage switchgear detecting unit

    NASA Astrophysics Data System (ADS)

    Ji, Tong; Xie, Wei; Wang, Xiaoqing; Zhang, Jinbo

    2017-07-01

    In order to understand the status of the high voltage switch in the whole life circle, you must monitor the mechanical and electrical parameters that affect device health. So this paper gives a new high voltage switchgear detecting unit based on ARM technology. It can measure closing-opening mechanical wave, storage motor current wave and contactor temperature to judge the device’s health status. When something goes wrong, it can be on alert and give some advice. The practice showed that it can meet the requirements of circuit breaker mechanical properties temperature online detection.

  5. Partial discharge in a high voltage experimental test assembly

    SciTech Connect

    Koss, R.J.; Brainard, J.P.

    1998-07-01

    This study was initiated when a new type of breakdown occurred in a high voltage experimental test assembly. An anomalous current pulse was observed, which indicated partial discharges, some leading to total breakdowns. High voltage insulator defects are shown along with their effect on the electrostatic fields in the breakdown region. OPERA electromagnetic field modeling software is used to calculate the fields and present a cause for the discharge. Several design modifications are investigated and one of the simplest resulted in a 25% decrease in the field at the discharge surface.

  6. Copper wire theft and high voltage electrical burns

    PubMed Central

    Francis, Eamon C; Shelley, Odhran P

    2014-01-01

    High voltage electrical burns are uncommon. However in the midst of our economic recession we are noticing an increasing number of these injuries. Copper wire is a valuable commodity with physical properties as an excellent conductor of electricity making it both ubiquitous in society and prized on the black market. We present two consecutive cases referred to the National Burns Unit who sustained life threatening injuries from the alleged theft of high voltage copper wire and its omnipresence on an international scale. PMID:25356371

  7. High-voltage, high-current, solid-state closing switch

    DOEpatents

    Focia, Ronald Jeffrey

    2017-08-22

    A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

  8. High-performance electroabsorption modulator

    NASA Astrophysics Data System (ADS)

    Wei, Zhang; Jiaoqing, Pan; Hongliang, Zhu; Huan, Wang; Wei, Wang

    2009-09-01

    A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a two-step low-pressure metal-organic vapor phase epitaxial process. An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties. In the experiment high modulation speed and high extinction ratio are obtained simultaneously, the electrical-to-optical frequency response (E/O response) without any load termination reaches to 22 GHz, and extinction ration is as high as 16 dB.

  9. High voltage pulse ignition of mercury discharge hollow cathodes

    NASA Technical Reports Server (NTRS)

    Wintucky, E. G.

    1973-01-01

    A high voltage pulse generated by a capacitor discharge into a step-up transformer has been demonstrated capable of consistently igniting hollow cathode mercury discharges at propellant flows and heater power levels much below those required by conventional cathode starting. Results are presented for 3.2-mm diameter enclosed and open keeper cathodes. Starting characteristics are shown to depend on keeper voltage, mercury flow rate, heater power, keeper orifice size, emissive materials, and electrode to which the pulse is applied. This starting technique has been used to start a cathode over 10,000 times without any degradation of starting capability. The starting reliability, propellant and power savings offered by the high voltage pulse start should favorably impact performance of electron bombardment thrusters in missions requiring many on-off duty cycles.

  10. Cardiac stimulation with high voltage discharge from stun guns.

    PubMed

    Nanthakumar, Kumaraswamy; Massé, Stephane; Umapathy, Karthikeyan; Dorian, Paul; Sevaptsidis, Elias; Waxman, Menashe

    2008-05-20

    The ability of an electrical discharge to stimulate the heart depends on the duration of the pulse, the voltage and the current density that reaches the heart. Stun guns deliver very short electrical pulses with minimal amount of current at high voltages. We discuss external stimulation of the heart by high voltage discharges and review studies that have evaluated the potential of stun guns to stimulate cardiac muscle. Despite theoretical analyses and animal studies which suggest that stun guns cannot and do not affect the heart, 3 independent investigators have shown cardiac stimulation by stun guns. Additional research studies involving people are needed to resolve the conflicting theoretical and experimental findings and to aid in the design of stun guns that are unable to stimulate the heart.

  11. A method for encapsulating high voltage power transformers

    SciTech Connect

    Sanchez, R.O.

    1990-01-01

    Voltage breakdowns become a major concern in reducing the size of high-voltage power converter transformers. Even the smallest of voids can provide a path for corona discharge which can cause a dielectric breakdown leading to a transformer failure. A method of encapsulating small high voltage transformers has been developed. The method virtually eliminates voids in the impregnation material, provides an exceptional dielectric between windings and provides a mechanically rugged package. The encapsulation material is a CTBN modified mica filled epoxy. The method requires heat/vacuum to impregnate the coil and heat/pressure to cure the encapsulant. The transformer package utilizes a Diallyl Phthalate (DAP) contact assembly in which a coated core/coil assembly is mounted and soldered. This assembly is then loaded into an RTV mold and the encapsulation process begins.

  12. Cardiac stimulation with high voltage discharge from stun guns

    PubMed Central

    Nanthakumar, Kumaraswamy; Massé, Stephane; Umapathy, Karthikeyan; Dorian, Paul; Sevaptsidis, Elias; Waxman, Menashe

    2008-01-01

    The ability of an electrical discharge to stimulate the heart depends on the duration of the pulse, the voltage and the current density that reaches the heart. Stun guns deliver very short electrical pulses with minimal amount of current at high voltages. We discuss external stimulation of the heart by high voltage discharges and review studies that have evaluated the potential of stun guns to stimulate cardiac muscle. Despite theoretical analyses and animal studies which suggest that stun guns cannot and do not affect the heart, 3 independent investigators have shown cardiac stimulation by stun guns. Additional research studies involving people are needed to resolve the conflicting theoretical and experimental findings and to aid in the design of stun guns that are unable to stimulate the heart. PMID:18450834

  13. Polymer defect states modulate open-circuit voltage in bulk-heterojunction solar cells

    SciTech Connect

    Ripolles, Teresa S.; Guerrero, Antonio; Garcia-Belmonte, Germà

    2013-12-09

    Defect states influence the operation of organic solar cells altering transport, recombination, and energetic mechanisms. This work investigates how processing conditions induce morphology-related, electrically active defects in the donor polymer of bulk-heterojunction solar cells. Structural order is inferred from absorption and X-ray diffraction data, while defect density is determined from capacitance methods. A correlation is observed between the polymer nanocrystallite size, the defect concentration, and the output voltage. For the case of poly(3-hexylthiophene), processing that promote crystallinity is beneficial for the device performance as it decreases the defect density (energy disorder) that finally enlarges the maximum achievable open-circuit voltage. Defect states within the effective bandgap modulate the downshift of the hole Fermi level upon illumination that in turn establishes the achievable open-circuit voltage.

  14. Ultra-compact Marx-type high-voltage generator

    DOEpatents

    Goerz, David A.; Wilson, Michael J.

    2000-01-01

    An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

  15. High Performance Power Module for Hall Effect Thrusters

    NASA Technical Reports Server (NTRS)

    Pinero, Luis R.; Peterson, Peter Y.; Bowers, Glen E.

    2002-01-01

    Previous efforts to develop power electronics for Hall thruster systems have targeted the 1 to 5 kW power range and an output voltage of approximately 300 V. New Hall thrusters are being developed for higher power, higher specific impulse, and multi-mode operation. These thrusters require up to 50 kW of power and a discharge voltage in excess of 600 V. Modular power supplies can process more power with higher efficiency at the expense of complexity. A 1 kW discharge power module was designed, built and integrated with a Hall thruster. The breadboard module has a power conversion efficiency in excess of 96 percent and weighs only 0.765 kg. This module will be used to develop a kW, multi-kW, and high voltage power processors.

  16. High voltage 4H-silicon carbide ACCUFETs

    NASA Astrophysics Data System (ADS)

    Chilukuri, Ravi Kiran

    2000-10-01

    Silicon carbide (SiC) is a promising material for high voltage, high frequency and high temperature semiconductor devices. The commercial availability of 6H- and 4H-SiC substrates, and the development of process technology for SiC, has led to demonstrations of a variety of SiC devices and circuits. In this research, a novel planar vertical MOSFET structure called the Accumulation Channel Field Effect Transistor (ACCUFET), which eliminates both the problems of premature oxide breakdown and low inversion layer mobility commonly found in SiC trench MOSFETs, is studied on 4H-SiC. An investigation of the poor performance of previously fabricated 4H-SiC ACCUFETs provided insights for changes in device design and process flow for improving the device performance. This insight was used for designing a new process run for the fabrication of improved high voltage 4H-SiC ACCUFETs. These new designs of ACCUFETs were successfully fabricated on starting material with different epilayer thickness and doping values, corresponding to breakdown voltages ranging from 2000 V to 7500 V. The forward conduction characteristics of different ACCUFET designs were studied. The device physics and the operation of the planar ACCUFET are discussed in detail, and the effects of key device design parameters on device characteristics are described with the aid of two-dimensional simulations. The contributions of the parasitic JFET regions (a surface JFET and a buried JFET) in the ACCUFET to its forward conduction and forward blocking characteristics are discussed in depth for the first time. ACCUFET structures designed for studying and for eliminating the problems due to the parasitic JFET regions are explained. It is demonstrated that in the high voltage ACCUFETs in which the epilayer doping is low, the buried JFET can be completely pinched off, resulting in a drain offset voltage in the current-voltage characteristics, which can be explained by the triodelike behavior of the buried JFET. The

  17. Analysis of pre-flight modulator voltage calibration data for the Voyager plasma science experiment

    NASA Technical Reports Server (NTRS)

    Nastov, Ognen

    1988-01-01

    The Voyager Plasma Science (PLS) modulator calibration (MVM) data analysis was undertaken in order to check the correctness of the fast A/D converter formulas that connect low voltage monitor signals (MV) with digital outputs (DN), to determine the proportionality constants between the actual modulator grid potential (V) and the monitor voltage (MV), and to establish an algorithm to link the digitized readouts (DN) with the actual grid potential (V). The analysis results are surprising in that the derived conversion constants deviate by fairly significant amounts from their nominal values. However, it must be kept in mind that the test results which were used for analysis may be very imprecise. Even if it is assumed that the test result errors are very large, they do no appear to be capable to account for all discrepancies between the theoretical expectations and the results of the analysis. Measurements with the flight spare instrument appear to be the only means of investigating these effects further.

  18. Topological phase transition in hexagonal boron-nitride bilayers modulated by gate voltage

    NASA Astrophysics Data System (ADS)

    Jin, Guojun; Zhai, Xuechao

    2013-03-01

    We study the gate-voltage modulated electronic properties of hexagonal boron-nitride bilayers with two different stacking structures in the presence of intrinsic and Rashba spin-orbit interactions. Our analytical results show that there are striking cooperation effects arising from the spin-orbit interactions and the interlayer bias voltage. For realizing topological phase transition, in contrast to a gated graphene bilayer for increasing its energy gap, the energy gap of a boron-nitride bilayer is significantly reduced by an applied gate voltage. For the AA stacking-bilayer which has the inversion symmetry, a strong topological phase is found, and there is an interesting reentrant behavior from a normal phase to a topological phase and then to a normal phase again, characterized by the topological index. Therefore, the gate voltage modulated AA-boron nitride bilayer can be taken as a newcomer of the topological insulator family. For the AB stacking-bilayer which is lack of the inversion symmetry, it is always topologically trivial, but exhibits an unusual quantum Hall phase with four degenerate low-energy states localized at a single edge. It is suggested that these theoretical findings could be verified experimentally in the transport properties of boron-nitride bylayers. This research was supported by the NSFC (Nos. 60876065, 11074108), PAPD, and NBRPC (Nos. 2009CB929504, 2011CB922102).

  19. Voltage-gated sodium channel modulation by scorpion α-toxins

    PubMed Central

    Bosmans, Frank; Tytgat, Jan

    2007-01-01

    Voltage-gated Na+ channels are integral membrane proteins that function as a gateway for a selective permeation of sodium ions across biological membranes. In this way, they are crucial players for the generation of action potentials in excitable cells. Voltage-gated Na+ channels are encoded by at least nine genes in mammals. The different isoforms have remarkably similar functional properties, but small changes in function and pharmacology are biologically well-defined, as underscored by mutations that cause several diseases and by modulation of a myriad of compounds respectively. This review will stress on the modulation of voltage-gated Na+ channels by scorpion alpha-toxins. Nature has designed these two classes of molecules as if they were predestined to each other: an inevitable ‘encounter’ between a voltage-gated Na+ channel isoform and an alpha-toxin from scorpion venom indeed results in a dramatically changed Na+ current phenotype with clear-cut consequences on electrical excitability and sometimes life or death. This fascinating aspect justifies an overview on scorpion venoms, their alpha-toxins and the Na+ channel targets they are built for, as well as on the molecular determinants that govern the selectivity and affinity of this ‘inseparable duo’. PMID:17087986

  20. Analysis of voltage effect on holographic gratings by modulation transfer function.

    PubMed

    Fontanilla-Urdaneta, Rosangela Coromoto; Olivares-Pérez, Arturo; Fuentes-Tapia, Israel; Ríos-Velasco, Mónica Areli

    2011-05-01

    The experimental data allow us to determine the imaging quality of holographic gratings with photosensitive film using organic material based on a polyvinyl alcohol matrix doped with potassium dichromate and nickel (II) chloride hexahydrate. The diffraction efficiency is estimated by different spatial frequencies, and the readout image quality is analyzed by the modulation transfer function. The experiment is carried out, with and without voltage application, at different spatial frequencies to obtain the image quality of photosensitive film.

  1. High voltage pulse ignition of mercury discharge hollow cathodes

    NASA Technical Reports Server (NTRS)

    Wintucky, E. G.

    1973-01-01

    A high voltage pulse generated by a capacitor discharge into a step-up transformer has been demonstrated capable of consistently igniting hollow cathode mercury discharges at propellant flows and heater power levels much below those required by conventional cathode starting. Results are presented for 3.2-mm diameter enclosed and open keeper cathodes. Starting characteristics are shown to depend on keeper voltage, mercury flow rate, heater power, keeper orifice size, emissive materials, and electrode to which the pulse is applied. This starting technique has been used to start a cathode over 10,000 times without any degradation of starting capability.

  2. Study of a High Voltage Ion Engine Power Supply

    NASA Technical Reports Server (NTRS)

    Stuart, Thomas A.; King, Roger J.; Mayer, Eric

    1996-01-01

    A complete laboratory breadboard version of a ion engine power converter was built and tested. This prototype operated on a line voltage of 80-120 Vdc, and provided output ratings of 1100 V at 1.8 kW, and 250 V at 20 mA. The high-voltage (HV) output voltage rating was revised from the original value of 1350 V at the beginning of the project. The LV output was designed to hold up during a 1-A surge current lasting up to 1 second. The prototype power converter included a internal housekeeping power supply which also operated from the line input. The power consumed in housekeeping was included in the overall energy budget presented for the ion engine converter. HV and LV output voltage setpoints were commanded through potentiometers. The HV converter itself reached its highest power efficiency of slightly over 93% at low line and maximum output. This would dip below 90% at high line. The no-load (rated output voltages, zero load current) power consumption of the entire system was less than 13 W. A careful loss breakdown shows that converter losses are predominately Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) conduction losses and HV rectifier snubbing losses, with the rectifier snubbing losses becoming predominant at high line. This suggests that further improvements in power efficiency could best be obtained by either developing a rectifier that was adequately protected against voltage overshoot with less snubbing, or by developing a pre-regulator to reduced the range of line voltage on the converter. The transient testing showed the converter to be fully protected against load faults, including a direct short-circuit from the HV output to the LV output terminals. Two currents sensors were used: one to directly detect any core ratcheting on the output transformer and re-initiate a soft start, and the other to directly detect a load fault and quickly shut down the converter for load protection. The finished converter has been extensively fault tested

  3. Deep Space One High-Voltage Bus Management

    NASA Technical Reports Server (NTRS)

    Rachocki, Ken; Nieraeth, Donald

    1999-01-01

    The design of the High Voltage Power Converter Unit on DS1 allows both the spacecraft avionics and ion propulsion to operate in a stable manner near the PPP of the solar array. This approach relies on a fairly well-defined solar array model to determine the projected PPP. The solar array voltage set-points have to be updated every week to maintain operation near PPP. Stable operation even to the LEFT of the Peak Power Point is achievable so long as you do not change the operating power level of the ion engine. The next step for this technology is to investigate the use of onboard autonomy to determine the optimum SA voltage regulation set-point (i.e. near the PPP); this is for future missions that have one or more ion propulsion subsystems.

  4. Current isolating epitaxial buffer layers for high voltage photodiode array

    DOEpatents

    Morse, Jeffrey D.; Cooper, Gregory A.

    2002-01-01

    An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

  5. Treatment of spider bites by high voltage direct current.

    PubMed

    Osborn, C D

    1991-06-01

    Between September 7, 1988, and January 15, 1991, 147 cases of confirmed (19) and suspected spider bites have been treated by high voltage direct current (HVDC) shocks. Venom damage to tissue was arrested at the time of treatment. Pain and systemic symptoms usually improved within 15 minutes. Lesion excision or grafts have not been necessary in any of the 127 cases with completed followup.

  6. [Research on sterilization of pathogens by high electrostatic voltage method].

    PubMed

    Wang, X; Wu, Y; Ni, X; Xia, B; Xu, J; Du, Q

    1992-10-01

    An experimental research has been carried out on the sterilization of four kinds of pathogens by high electrostatic method along with an inquiry into the influence of voltage waveform and the treated time on sterilization. It is concluded that pathogens can be killed efficiently by corona discharge field.

  7. High voltage electrical insulation coating for refractory materials

    NASA Technical Reports Server (NTRS)

    Lent, W. E.

    1972-01-01

    Formula and process have been developed for coating refractory metal surfaces with high voltage electrical insulation for use at temperatures to 600 C. Coatings were specifically developed as an insulation for the surface of a perforated, molybdenum, ion-accelerator grid, but are not limited to this application.

  8. The design and development of a high voltage power supply

    NASA Technical Reports Server (NTRS)

    Ting, R.

    1974-01-01

    A high voltage circuit system was redesigned, breadboarded, and tested to meet revised specification requirements. Circuit component subassemblies are described and include the firing unit, regulator, dc to dc converter, and output and trigger circuits. Design changes, tests, and equipment fabrication are outlined chronologically by month. A list of design specifications is included.

  9. [Fatal electric arc accidents due to high voltage].

    PubMed

    Strauch, Hansjürg; Wirth, Ingo

    2004-01-01

    The frequency of electric arc accidents has been successfully reduced owing to preventive measures taken by the professional association. However, the risk of accidents has continued to exist in private setting. Three fatal electric arc accidents caused by high voltage are reported with reference to the autopsy findings.

  10. High voltage gas insulated transmission line with continuous particle trapping

    DOEpatents

    Cookson, Alan H.; Dale, Steinar J.

    1983-01-01

    This invention provides a novel high voltage gas insulated transmission line utilizing insulating supports spaced at intervals with snap-in means for supporting a continuous trapping apparatus and said trapping apparatus having perforations and cutouts to facilitate trapping of contaminating particles and system flexibility.

  11. 59. View of high voltage (4160 volts alternating current) electric ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    59. View of high voltage (4160 volts alternating current) electric load center and motor control center at mezzanine level in transmitter building no. 102. - Clear Air Force Station, Ballistic Missile Early Warning System Site II, One mile west of mile marker 293.5 on Parks Highway, 5 miles southwest of Anderson, Anderson, Denali Borough, AK

  12. Modulation of the voltage-dependent anion channel of mitochondria by elaidic acid.

    PubMed

    Tewari, Debanjan; Bera, Amal Kanti

    2016-08-26

    Dietary trans fatty acids (TFAs) are known to increase the risk of cardiovascular diseases by altering plasma lipid profile and activating various inflammatory signaling pathways. Here we show that elaidic acid (EA), the most abundant TFA in diet, alters the electrophysiological properties of voltage-dependent anion channel (VDAC) of mitochondria. Purified bovine brain VDAC, when incorporated in the planar lipid bilayer (PLB) composed of 1,2-diphytanoyl-sn-glycero-3 phosphatidyl choline (DPhPC) and EA in a 9 to 1 ratio (wt/wt), exhibited complete closing events at different voltages. The closing events were observed at even -10 mV, a voltage at which VDAC usually remains fully open all the time. Additionally, the voltage sensitivity of VDAC was lost in presence of EA; the channel conductance did not decrease with increasing voltages. In identical experimental conditions, membrane containing oleic acid (OA), the cis isomer of EA did not produce any such effect. We propose that EA possibly exerts its adverse effect by modulating VDAC. Copyright © 2016 Elsevier Inc. All rights reserved.

  13. High-voltage compatible, full-depleted CCD

    DOEpatents

    Holland, Stephen Edward

    2007-09-18

    A charge coupled device for detecting electromagnetic and particle radiation is described. The device includes a high-resistivity semiconductor substrate, buried channel regions, gate electrode circuitry, and amplifier circuitry. For good spatial resolution and high performance, especially when operated at high voltages with full or nearly full depletion of the substrate, the device can also include a guard ring positioned near channel regions, a biased channel stop, and a biased polysilicon electrode over the channel stop.

  14. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage powerlines; clearances above... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad...

  15. 30 CFR 77.807 - Installation of high-voltage transmission cables.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Installation of high-voltage transmission... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807 Installation of high-voltage transmission cables. High-voltage transmission cables shall be installed or placed so as to afford...

  16. 30 CFR 75.810 - High-voltage trailing cables; splices.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage trailing cables; splices. 75.810... SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.810 High-voltage trailing cables; splices. In the case of high-voltage cables used as...

  17. 30 CFR 75.833 - Handling high-voltage trailing cables.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Handling high-voltage trailing cables. 75.833... High-Voltage Longwalls § 75.833 Handling high-voltage trailing cables. (a) Cable handling. (1) Miners must not handle energized trailing cables unless they are wearing high-voltage insulating gloves, which...

  18. 30 CFR 75.833 - Handling high-voltage trailing cables.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Handling high-voltage trailing cables. 75.833... High-Voltage Longwalls § 75.833 Handling high-voltage trailing cables. (a) Cable handling. (1) Miners must not handle energized trailing cables unless they are wearing high-voltage insulating gloves, which...

  19. 30 CFR 75.833 - Handling high-voltage trailing cables.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Handling high-voltage trailing cables. 75.833... High-Voltage Longwalls § 75.833 Handling high-voltage trailing cables. (a) Cable handling. (1) Miners must not handle energized trailing cables unless they are wearing high-voltage insulating gloves, which...

  20. 30 CFR 75.833 - Handling high-voltage trailing cables.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Handling high-voltage trailing cables. 75.833... High-Voltage Longwalls § 75.833 Handling high-voltage trailing cables. (a) Cable handling. (1) Miners must not handle energized trailing cables unless they are wearing high-voltage insulating gloves, which...

  1. 30 CFR 75.833 - Handling high-voltage trailing cables.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Handling high-voltage trailing cables. 75.833... High-Voltage Longwalls § 75.833 Handling high-voltage trailing cables. (a) Cable handling. (1) Miners must not handle energized trailing cables unless they are wearing high-voltage insulating gloves, which...

  2. 30 CFR 77.800 - High-voltage circuits; circuit breakers.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 77.800... COAL MINES Surface High-Voltage Distribution § 77.800 High-voltage circuits; circuit breakers. High-voltage circuits supplying power to portable or mobile equipment shall be protected by suitable...

  3. Next generation KATRIN high precision voltage divider for voltages up to 65kV

    NASA Astrophysics Data System (ADS)

    Bauer, S.; Berendes, R.; Hochschulz, F.; Ortjohann, H.-W.; Rosendahl, S.; Thümmler, T.; Schmidt, M.; Weinheimer, C.

    2013-10-01

    The KATRIN (KArlsruhe TRItium Neutrino) experiment aims to determine the mass of the electron antineutrino with a sensitivity of 200 meV by precisely measuring the electron spectrum of the tritium beta decay. This will be done by the use of a retarding spectrometer of the MAC-E-Filter type. To achieve the desired sensitivity the stability of the retarding potential of -18.6 kV has to be monitored with a precision of 3 ppm over at least two months. Since this is not feasible with commercial devices, two ppm-class high voltage dividers were developed, following the concept of the standard divider for DC voltages of up to 100 kV of the Physikalisch-Technische Bundesanstalt (PTB). In order to reach such high accuracies different effects have to be considered. The two most important ones are the temperature dependence of resistance and leakage currents, caused by insulators or corona discharges. For the second divider improvements were made concerning the high-precision resistors and the thermal design of the divider. The improved resistors are the result of a cooperation with the manufacturer. The design improvements, the investigation and the selection of the resistors, the built-in ripple probe and the calibrations at PTB will be reported here. The latter demonstrated a stability of about 0.1 ppm/month over a period of two years.

  4. Electrical power inverter having a phase modulated, twin-inverter, high frequency link and an energy storage module

    DOEpatents

    Pitel, I.J.

    1987-02-03

    The present invention provides an electrical power inverter method and apparatus, which includes a high frequency link, for converting DC power into AC power. Generally stated, the apparatus includes a first high frequency module which produces an AC voltage at a first output frequency, and a second high frequency inverter module which produces an AC voltage at a second output frequency that is substantially the same as the first output frequency. The second AC voltage is out of phase with the first AC voltage by a selected angular phase displacement. A mixer mixes the first and second output voltages to produce a high frequency carrier which has a selected base frequency impressed on the sidebands thereof. A rectifier rectifies the carrier, and a filter filters the rectified carrier. An output inverter inverts the filtered carrier to produce an AC line voltage at the selected base frequency. A phase modulator adjusts the relative angular phase displacement between the outputs of the first and second high frequency modules to control the base frequency and magnitude of the AC line voltage. 19 figs.

  5. Electrical power inverter having a phase modulated, twin-inverter, high frequency link and an energy storage module

    DOEpatents

    Pitel, Ira J.

    1987-02-03

    The present invention provides an electrical power inverter method and apparatus, which includes a high frequency link, for converting DC power into AC power. Generally stated, the apparatus includes a first high frequency module which produces an AC voltage at a first output frequency, and a second high frequency inverter module which produces an AC voltage at a second output frequency that is substantially the same as the first output frequency. The second AC voltage is out of phase with the first AC voltage by a selected angular phase displacement. A mixer mixes the first and second output voltages to produce a high frequency carrier which has a selected base frequency impressed on the sidebands thereof. A rectifier rectifies the carrier, and a filter filters the rectified carrier. An output inverter inverts the filtered carrier to produce an AC line voltage at the selected base frequency. A phase modulator adjusts the relative angular phase displacement between the outputs of the first and second high frequency modules to control the base frequency and magnitude of the AC line voltage.

  6. Speed optimized linear-mode high-voltage CMOS avalanche photodiodes with high responsivity.

    PubMed

    Enne, R; Steindl, B; Zimmermann, H

    2015-10-01

    Two different speed optimized avalanche photodiodes (APDs) fabricated in a 0.35 μm standard high-voltage (HV) complementary metal-oxide-semiconductor (CMOS) process with a high unamplified responsivity (avalanche gain M=1) of 0.41 A/W at 670 nm are presented. These APDs differ regarding the effective doping of the deep p well (90% and 75%), using lateral well modulation doping. Compared to the -3  dB bandwidth of the unmodulated APD with 100% doping (850 MHz), this optimization leads to an improved bandwidth of 1.02 and 1.25 GHz for the 75% APD and 90% APD, respectively, both at a gain of M=50.

  7. Molecular pathophysiology and pharmacology of the voltage-sensing module of neuronal ion channels

    PubMed Central

    Miceli, Francesco; Soldovieri, Maria Virginia; Ambrosino, Paolo; De Maria, Michela; Manocchio, Laura; Medoro, Alessandro; Taglialatela, Maurizio

    2015-01-01

    Voltage-gated ion channels (VGICs) are membrane proteins that switch from a closed to open state in response to changes in membrane potential, thus enabling ion fluxes across the cell membranes. The mechanism that regulate the structural rearrangements occurring in VGICs in response to changes in membrane potential still remains one of the most challenging topic of modern biophysics. Na+, Ca2+ and K+ voltage-gated channels are structurally formed by the assembly of four similar domains, each comprising six transmembrane segments. Each domain can be divided into two main regions: the Pore Module (PM) and the Voltage-Sensing Module (VSM). The PM (helices S5 and S6 and intervening linker) is responsible for gate opening and ion selectivity; by contrast, the VSM, comprising the first four transmembrane helices (S1–S4), undergoes the first conformational changes in response to membrane voltage variations. In particular, the S4 segment of each domain, which contains several positively charged residues interspersed with hydrophobic amino acids, is located within the membrane electric field and plays an essential role in voltage sensing. In neurons, specific gating properties of each channel subtype underlie a variety of biological events, ranging from the generation and propagation of electrical impulses, to the secretion of neurotransmitters and to the regulation of gene expression. Given the important functional role played by the VSM in neuronal VGICs, it is not surprising that various VSM mutations affecting the gating process of these channels are responsible for human diseases, and that compounds acting on the VSM have emerged as important investigational tools with great therapeutic potential. In the present review we will briefly describe the most recent discoveries concerning how the VSM exerts its function, how genetically inherited diseases caused by mutations occurring in the VSM affects gating in VGICs, and how several classes of drugs and toxins

  8. Molecular pathophysiology and pharmacology of the voltage-sensing module of neuronal ion channels.

    PubMed

    Miceli, Francesco; Soldovieri, Maria Virginia; Ambrosino, Paolo; De Maria, Michela; Manocchio, Laura; Medoro, Alessandro; Taglialatela, Maurizio

    2015-01-01

    Voltage-gated ion channels (VGICs) are membrane proteins that switch from a closed to open state in response to changes in membrane potential, thus enabling ion fluxes across the cell membranes. The mechanism that regulate the structural rearrangements occurring in VGICs in response to changes in membrane potential still remains one of the most challenging topic of modern biophysics. Na(+), Ca(2+) and K(+) voltage-gated channels are structurally formed by the assembly of four similar domains, each comprising six transmembrane segments. Each domain can be divided into two main regions: the Pore Module (PM) and the Voltage-Sensing Module (VSM). The PM (helices S5 and S6 and intervening linker) is responsible for gate opening and ion selectivity; by contrast, the VSM, comprising the first four transmembrane helices (S1-S4), undergoes the first conformational changes in response to membrane voltage variations. In particular, the S4 segment of each domain, which contains several positively charged residues interspersed with hydrophobic amino acids, is located within the membrane electric field and plays an essential role in voltage sensing. In neurons, specific gating properties of each channel subtype underlie a variety of biological events, ranging from the generation and propagation of electrical impulses, to the secretion of neurotransmitters and to the regulation of gene expression. Given the important functional role played by the VSM in neuronal VGICs, it is not surprising that various VSM mutations affecting the gating process of these channels are responsible for human diseases, and that compounds acting on the VSM have emerged as important investigational tools with great therapeutic potential. In the present review we will briefly describe the most recent discoveries concerning how the VSM exerts its function, how genetically inherited diseases caused by mutations occurring in the VSM affects gating in VGICs, and how several classes of drugs and toxins

  9. High Transmembrane Voltage Raised by Close Contact Initiates Fusion Pore

    PubMed Central

    Bu, Bing; Tian, Zhiqi; Li, Dechang; Ji, Baohua

    2016-01-01

    Membrane fusion lies at the heart of neuronal communication but the detailed mechanism of a critical step, fusion pore initiation, remains poorly understood. Here, through atomistic molecular dynamics simulations, a transient pore formation induced by a close contact of two apposed bilayers is firstly reported. Such a close contact gives rise to a high local transmembrane voltage that induces the transient pore formation. Through simulations on two apposed bilayers fixed at a series of given distances, the process in which two bilayers approaching to each other under the pulling force from fusion proteins for membrane fusion was mimicked. Of note, this close contact induced fusion pore formation is contrasted with previous reported electroporation under ad hoc applied external electric field or ionic charge in-balance. We show that the transmembrane voltage increases with the decrease of the distance between the bilayers. Below a critical distance, depending on the lipid composition, the local transmembrane voltage can be sufficiently high to induce the transient pores. The size of these pores is approximately 1~2 nm in diameter, which is large enough to allow passing of neurotransmitters. A resealing of the membrane pores resulting from the neutralization of the transmembrane voltage by ions through the pores was then observed. We also found that the membrane tension can either prolong the lifetime of transient pores or cause them to dilate for full collapse. This result provides a possible mechanism for fusion pore formation and regulation of pathway of fusion process. PMID:28018169

  10. Stable electrolyte for high voltage electrochemical double-layer capacitors

    DOE PAGES

    Ruther, Rose E.; Sun, Che -Nan; Holliday, Adam; ...

    2016-12-28

    A simple electrolyte consisting of NaPF6 salt in 1,2-dimethoxyethane (DME) can extend the voltage window of electric double-layer capacitors (EDLCs) to >3.5 V. DME does not passivate carbon electrodes at very negative potentials (near Na/Na+), extending the practical voltage window by about 1.0 V compared to standard, non-aqueous electrolytes based on acetonitrile. The voltage window is demonstrated in two- and three-electrode cells using a combination of electrochemical impedance spectroscopy (EIS), charge-discharge cycling, and measurements of leakage current. DME-based electrolytes cannot match the high conductivity of acetonitrile solutions, but they can satisfy applications that demand high energy density at moderate power.more » The conductivity of NaPF6 in DME is comparable to commercial lithium-ion battery electrolytes and superior to most ionic liquids. Lastly, factors that limit the voltage window and EDLC energy density are discussed, and strategies to further boost energy density are proposed.« less

  11. Stable electrolyte for high voltage electrochemical double-layer capacitors

    SciTech Connect

    Ruther, Rose E.; Sun, Che -Nan; Holliday, Adam; Cheng, Shiwang; Delnick, Frank M.; Zawodzinski, Thomas A.; Nanda, Jagjit

    2016-12-28

    A simple electrolyte consisting of NaPF6 salt in 1,2-dimethoxyethane (DME) can extend the voltage window of electric double-layer capacitors (EDLCs) to >3.5 V. DME does not passivate carbon electrodes at very negative potentials (near Na/Na+), extending the practical voltage window by about 1.0 V compared to standard, non-aqueous electrolytes based on acetonitrile. The voltage window is demonstrated in two- and three-electrode cells using a combination of electrochemical impedance spectroscopy (EIS), charge-discharge cycling, and measurements of leakage current. DME-based electrolytes cannot match the high conductivity of acetonitrile solutions, but they can satisfy applications that demand high energy density at moderate power. The conductivity of NaPF6 in DME is comparable to commercial lithium-ion battery electrolytes and superior to most ionic liquids. Lastly, factors that limit the voltage window and EDLC energy density are discussed, and strategies to further boost energy density are proposed.

  12. Topologically protected loop flows in high voltage AC power grids

    NASA Astrophysics Data System (ADS)

    Coletta, T.; Delabays, R.; Adagideli, I.; Jacquod, Ph

    2016-10-01

    Geographical features such as mountain ranges or big lakes and inland seas often result in large closed loops in high voltage AC power grids. Sizable circulating power flows have been recorded around such loops, which take up transmission line capacity and dissipate but do not deliver electric power. Power flows in high voltage AC transmission grids are dominantly governed by voltage angle differences between connected buses, much in the same way as Josephson currents depend on phase differences between tunnel-coupled superconductors. From this previously overlooked similarity we argue here that circulating power flows in AC power grids are analogous to supercurrents flowing in superconducting rings and in rings of Josephson junctions. We investigate how circulating power flows can be created and how they behave in the presence of ohmic dissipation. We show how changing operating conditions may generate them, how significantly more power is ohmically dissipated in their presence and how they are topologically protected, even in the presence of dissipation, so that they persist when operating conditions are returned to their original values. We identify three mechanisms for creating circulating power flows, (i) by loss of stability of the equilibrium state carrying no circulating loop flow, (ii) by tripping of a line traversing a large loop in the network and (iii) by reclosing a loop that tripped or was open earlier. Because voltages are uniquely defined, circulating power flows can take on only discrete values, much in the same way as circulation around vortices is quantized in superfluids.

  13. High Transmembrane Voltage Raised by Close Contact Initiates Fusion Pore.

    PubMed

    Bu, Bing; Tian, Zhiqi; Li, Dechang; Ji, Baohua

    2016-01-01

    Membrane fusion lies at the heart of neuronal communication but the detailed mechanism of a critical step, fusion pore initiation, remains poorly understood. Here, through atomistic molecular dynamics simulations, a transient pore formation induced by a close contact of two apposed bilayers is firstly reported. Such a close contact gives rise to a high local transmembrane voltage that induces the transient pore formation. Through simulations on two apposed bilayers fixed at a series of given distances, the process in which two bilayers approaching to each other under the pulling force from fusion proteins for membrane fusion was mimicked. Of note, this close contact induced fusion pore formation is contrasted with previous reported electroporation under ad hoc applied external electric field or ionic charge in-balance. We show that the transmembrane voltage increases with the decrease of the distance between the bilayers. Below a critical distance, depending on the lipid composition, the local transmembrane voltage can be sufficiently high to induce the transient pores. The size of these pores is approximately 1~2 nm in diameter, which is large enough to allow passing of neurotransmitters. A resealing of the membrane pores resulting from the neutralization of the transmembrane voltage by ions through the pores was then observed. We also found that the membrane tension can either prolong the lifetime of transient pores or cause them to dilate for full collapse. This result provides a possible mechanism for fusion pore formation and regulation of pathway of fusion process.

  14. Oxidatively stable fluorinated sulfone electrolytes for high voltage high energy lithium-ion batteries

    DOE PAGES

    Su, Chi -Cheung; He, Meinan; Redfern, Paul C.; ...

    2017-03-16

    New fluorinated sulfones were synthesized and evaluated in high voltage lithium-ion batteries using LiNi0.5Mn1.5O4 (LNMO) cathode. Fluorinated sulfones with an α-trifluoromethyl group exhibit enhanced oxidation stability, reduced viscosity and superior separator wettability as compared to their non-fluorinated counterparts. Finally, the improved performance in high voltage cells makes it a promising high voltage electrolyte for 5-V lithium-ion chemistry.

  15. A Proposal for a High Voltage Transmission Line Directional Coupler

    SciTech Connect

    Olsen, Robert; Li, Zhi

    2016-05-01

    Directional couplers are devices generally used in high frequency transmission lines and waveguides that respond to forward and reverse traveling waves separately. Hence they can be used to either measure standing wave ratio in the steady state or to determine the direction of a propagating transient wave. Here, a design is proposed for a directional coupler to be used on multimode high voltage transmission lines. Its performance is analyzed and several suggestions are made for improving its design.

  16. A magnesium–sodium hybrid battery with high operating voltage

    DOE PAGES

    Dong, Hui; Li, Yifei; Liang, Yanliang; ...

    2016-06-10

    Here, we report a high performance magnesium-sodium hybrid battery utilizing a magnesium-sodium dual-salt electrolyte, a magnesium anode, and a Berlin green cathode. The cell delivers an average discharge voltage of 2.2 V and a reversible capacity of 143 mA h g–1. We also demonstrate the cell with an energy density of 135 W h kg–1 and a high power density of up to 1.67 kW kg–1.

  17. Fast-Recovery, High-Voltage Power Diode

    NASA Technical Reports Server (NTRS)

    Sundberg, G.; Berman, A.; Balodis, V.; Gaugh, C.; Duffin, J.; Karatnicki, H.; Larson, E.

    1985-01-01

    New family of fast-recovery high-voltage power diodes compatible with D60T and D7ST transistors developed. Have wide range of applications in spacecraft and aircraft electrical distribution equipment, dc/dc inverters, and ac motor controllers for high-horsepower electric motors operating from 480-volt ac lines. Fast-Recovery 1,200-V Power Diodes use chip of hexagonal geometry to maximize effective silicon area.

  18. Selective modulation of cellular voltage-dependent calcium channels by hyperbaric pressure—a suggested HPNS partial mechanism

    PubMed Central

    Aviner, Ben; Gradwohl, Gideon; Mor Aviner, Merav; Levy, Shiri; Grossman, Yoram

    2014-01-01

    Professional deep sea divers experience motor and cognitive impairment, known as High Pressure Neurological Syndrome (HPNS), when exposed to pressures of 100 msw (1.1 MPa) and above, considered to be the result of synaptic transmission alteration. Previous studies have indicated modulation of presynaptic Ca2+ currents at high pressure. We directly measured for the first time pressure effects on the currents of voltage dependent Ca2+ channels (VDCCs) expressed in Xenopus oocytes. Pressure selectivity augmented the current in CaV1.2 and depressed it in CaV3.2 channels. Pressure application also affected the channels' kinetics, such as ƮRise, ƮDecay. Pressure modulation of VDCCs seems to play an important role in generation of HPNS signs and symptoms. PMID:24904281

  19. High-voltage pixel sensors for ATLAS upgrade

    NASA Astrophysics Data System (ADS)

    Perić, I.; Kreidl, C.; Fischer, P.; Bompard, F.; Breugnon, P.; Clemens, J.-C.; Fougeron, D.; Liu, J.; Pangaud, P.; Rozanov, A.; Barbero, M.; Feigl, S.; Capeans, M.; Ferrere, D.; Pernegger, H.; Ristic, B.; Muenstermann, D.; Gonzalez Sevilla, S.; La Rosa, A.; Miucci, A.; Nessi, M.; Iacobucci, G.; Backhaus, M.; Hügging, Fabian; Krüger, H.; Hemperek, T.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Quadt, A.; Weingarten, J.; George, M.; Grosse-Knetter, J.; Rieger, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.

    2014-11-01

    The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. The n-well contains CMOS pixel electronics. The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance. We are currently evaluating the use of the high-voltage detectors implemented in 180 nm HV-CMOS technology for the high-luminosity ATLAS upgrade. Our approach is replacing the existing pixel and strip sensors with the CMOS sensors while keeping the presently used readout ASICs. By intelligence we mean the ability of the sensor to recognize a particle hit and generate the address information. In this way we could benefit from the advantages of the HV sensor technology such as lower cost, lower mass, lower operating voltage, smaller pitch, smaller clusters at high incidence angles. Additionally we expect to achieve a radiation hardness necessary for ATLAS upgrade. In order to test the concept, we have designed two HV-CMOS prototypes that can be readout in two ways: using pixel and strip readout chips. In the case of the pixel readout, the connection between HV-CMOS sensor and the readout ASIC can be established capacitively.

  20. Stable Josephson reference voltages between 0. 1 and 1. 3 V for high-precision voltage standards

    SciTech Connect

    Niemeyer, J.; Grimm, L.; Meier, W.; Hinken, J.H.; Vollmer, E.

    1985-12-01

    A new series array of 1440 Josephson tunnel junctions has been developed and tested as a reference voltage standard. It yields microwave induced quantized voltage steps up to 1.3 V. The steps are usually stable for more than 5 h with a microwave driving frequency of either 70 or 90 GHz. A high-resolution comparison of a constant voltage step at the 1-V level with the electromotive force of a saturated Weston cell is described. The comparison shows that the step voltage is constant to within +- 1 nV over the full step width.

  1. Stable Josephson reference voltages between 0.1 and 1.3 V for high precision voltage standards

    NASA Astrophysics Data System (ADS)

    Niemeyer, J.; Grimm, L.; Meier, W.; Hinken, J. H.; Vollmer, E.

    1985-12-01

    A new series array of 1440 Josephson tunnel junctions has been developed and tested as a reference voltage standard. It yields microwave induced quantized voltage steps up to 1.3 V. The steps are usually stable for more than 5 h with a microwave driving frequency of either 70 or 90 GHz. A high-resolution comparison of a constant voltage step at the 1-V level with the electromotive force of a saturated Weston cell is described. The comparison shows that the step voltage is constant to within + or - 1 nV over the full step width.

  2. High-voltage plasma interactions calculations using NASCAP/LEO

    NASA Technical Reports Server (NTRS)

    Mandell, M. J.; Katz, I.

    1990-01-01

    This paper reviews four previous simulations (two laboratory and two space-flight) of interactions of a high-voltage spacecraft with a plasma under low-earth orbit conditions, performed using a three-dimensional computer code NASCAP/LEO. Results show that NASCAP/LEO can perform meaningful simulations of high-voltage plasma interactions taking into account three-dimensional effects of geometry, spacecraft motion, and magnetic field. Two new calculations are presented: (1) for current collection by 1-mm pinholes in wires (showing that a pinhole in a wire can collect far more current than a similar pinhole in a flat plate); and (2) current collection by Charge-2 mother vehicle launched in December 1985. It is shown that the Charge-2 calculations predicted successfully ion collection at negative bias, the floating potential of a probe outside or inside the sheath under negative bias conditions, and magnetically limited electron collection under electron beam operation at high altitude.

  3. High-voltage plasma interactions calculations using NASCAP/LEO

    NASA Technical Reports Server (NTRS)

    Mandell, M. J.; Katz, I.

    1990-01-01

    This paper reviews four previous simulations (two laboratory and two space-flight) of interactions of a high-voltage spacecraft with a plasma under low-earth orbit conditions, performed using a three-dimensional computer code NASCAP/LEO. Results show that NASCAP/LEO can perform meaningful simulations of high-voltage plasma interactions taking into account three-dimensional effects of geometry, spacecraft motion, and magnetic field. Two new calculations are presented: (1) for current collection by 1-mm pinholes in wires (showing that a pinhole in a wire can collect far more current than a similar pinhole in a flat plate); and (2) current collection by Charge-2 mother vehicle launched in December 1985. It is shown that the Charge-2 calculations predicted successfully ion collection at negative bias, the floating potential of a probe outside or inside the sheath under negative bias conditions, and magnetically limited electron collection under electron beam operation at high altitude.

  4. High-voltage suicidal electrocution with multiple exit wounds.

    PubMed

    Das, Siddhartha; Patra, Ambika Prasad; Shaha, Kusa Kumar; Sistla, Sarath Chandra; Jena, Manoj Kumar

    2013-03-01

    Poisoning, hanging, and burning are the usual methods adopted by people to commit suicide. Suicide by electrocution and that too high voltage is one of the rarest methods adopted for the purpose. We report the case of a young man who committed suicide by climbing up a 25-ft-high electric pole. The deceased was a regular alcoholic and was under severe depression for a long time because of his personal problems. He survived for more than 2 days after the incident. His serum urea and creatinine levels were elevated, so were the creatine kinase total and creatine kinase-MB level. The method adopted and the findings make this case a rare scientific report. Moreover, to the best of our knowledge, this is the first reported case in an English scientific literature of a high-voltage suicidal electrocution with multiple exit wounds. The circumstances surrounding the manner of electrocution and the features of electric injuries are presented and discussed.

  5. Upgrade of the TITAN EBIT High Voltage Operation

    NASA Astrophysics Data System (ADS)

    Foster, Matt; Titan Collaboration

    2016-09-01

    TRIUMF's Ion Trap for Atomic and Nuclear science (TITAN) is a setup dedicated to highly precise mass measurements of short-lived isotopes down to 10ms. TITAN's Electron Beam Ion Trap (EBIT) is a charge breeder integrated into the setup to perform in-trap decay spectroscopy of highly charged ions and increase the precision of mass measurements. In its previous configuration TITAN's EBIT could not fulfil its maximum design specification due to high voltage safety restrictions, limiting its obtainable charge states. A recently completed upgrade of the high voltage operation that will allow the EBIT to fulfil its design specification and achieve higher charge states for heavier species is undergoing preliminary tests with stable beam. Simulations were performed to optimise the injection and extraction efficiency at high voltage and initial tests have involved using a Ge detector to identify x-rays produced by charge breeding stable ions. Future work comprises exploring electron capture rates of Ne-, He- and H-like charge states of 64Cu and higher masses, which were not previously accessible. The function of the EBIT within the TITAN setup, the work carried out on the upgrade thus far and its scope for future work will be presented.

  6. Module Nine: Relationships of Current, Counter EMF, and Voltage in LR Circuits; Basic Electricity and Electronics Individualized Learning System.

    ERIC Educational Resources Information Center

    Bureau of Naval Personnel, Washington, DC.

    The student will study the ways that inductance affects voltage and current in Direct Current (DC) and Alternating Current (AC) circuits and why and how inductors cause these actions. The module is divided into six lessons: rise and decay of current and voltage, LR (inductive-resistive) time constant, using the universal TC (time constant) chart,…

  7. [An integral chip for the multiphase pulse-duration modulation used for voltage changer in biomedical microprocessor systems].

    PubMed

    Balashov, A M; Selishchev, S V

    2004-01-01

    An integral chip (IC) was designed for controlling the step-down pulse voltage converter, which is based on the multiphase pulse-duration modulation, for use in biomedical microprocessor systems. The CMOS technology was an optimal basis for the IC designing. An additional feedback circuit diminishes the output voltage dispersion at dynamically changing loads.

  8. Modulation of spin dynamics via voltage control of spin-lattice coupling in multiferroics

    DOE PAGES

    Zhu, Mingmin; Zhou, Ziyao; Peng, Bin; ...

    2017-02-03

    Our work aims at magnonics manipulation by the magnetoelectric coupling effect and is motivated by the most recent progresses in both magnonics (spin dynamics) and multiferroics fields. Here, voltage control of magnonics, particularly the surface spin waves, is achieved in La0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 multiferroic heterostructures. With the electron spin resonance method, a large 135 Oe shift of surface spin wave resonance (≈7 times greater than conventional voltage-induced ferromagnetic resonance shift of 20 Oe) is determined. A model of the spin-lattice coupling effect, i.e., varying exchange stiffness due to voltage-induced anisotropic lattice changes, has been established to explain experiment results with good agreement.more » In addition, an “on” and “off” spin wave state switch near the critical angle upon applying a voltage is created. The modulation of spin dynamics by spin-lattice coupling effect provides a platform for realizing energy-efficient, tunable magnonics devices.« less

  9. Carvacrol modulates voltage-gated sodium channels kinetics in dorsal root ganglia.

    PubMed

    Joca, Humberto Cavalcante; Vieira, Daiana Cardoso Oliveira; Vasconcelos, Aliny Perreira; Araújo, Demetrius Antônio Machado; Cruz, Jader Santos

    2015-06-05

    Recent studies have shown that many of plant-derived compounds interact with specific ion channels and thereby modulate many sensing mechanisms, such as nociception. The monoterpenoid carvacrol (5-isopropyl-2-methylphenol) has an anti-nociceptive effect related to a reduction in neuronal excitability and voltage-gated Na(+) channels (NaV) inhibition in peripheral neurons. However, the detailed mechanisms of carvacrol-induced inhibition of neuronal NaV remain elusive. This study explores the interaction between carvacrol and NaV in isolated dorsal root ganglia neurons. Carvacrol reduced the total voltage-gated Na(+) current and tetrodotoxin-resistant (TTX-R) Na(+) current component in a concentration-dependent manner. Carvacrol accelerates current inactivation and induced a negative-shift in voltage-dependence of steady-state fast inactivation in total and TTX-R Na(+) current. Furthermore, carvacrol slowed the recovery from inactivation. Carvacrol provoked a leftward shift in both the voltage-dependence of steady-state inactivation and activation of the TTX-R Na(+) current component. In addition, carvacrol-induced inhibition of TTX-R Na(+) current was enhanced by an increase in stimulation frequency and when neurons were pre-conditioned with long depolarization pulse (5s at -50 mV). Taken all results together, we herein demonstrated that carvacrol affects NaV gating properties. The present findings would help to explain the mechanisms underlying the analgesic activity of carvacrol.

  10. An internal ALD-based high voltage divider and signal circuit for MCP-based photodetectors

    NASA Astrophysics Data System (ADS)

    Adams, Bernhard W.; Elagin, Andrey; Elam, Jeffrey W.; Frisch, Henry J.; Genat, Jean-Francois; Gregar, Joseph S.; Mane, Anil U.; Minot, Michael J.; Northrop, Richard; Obaid, Razib; Oberla, Eric; Vostrikov, Alexander; Wetstein, Matthew

    2015-04-01

    We describe a pin-less design for the high voltage (HV) resistive divider of the all-glass LAPPDTM 8 in.-square thin photodetector module. The divider, which distributes high voltage applied to the photocathode to the two micro-channel plates (MCPs) that constitute the amplification stage, is comprised of the two MCPs and three glass mechanical spacers, each of which is coated with a resistive layer using atomic layer deposition (ALD). The three glass grid spacers and the two MCPs form a continuous resistive path between cathode and anode, with the voltages across the MCPs and the spacers determined by the resistance of each. High voltage is applied on an external tab on the top glass window that connects to the photocathode through the metal seal. The DC ground is supplied by microstrips on the bottom glass plate that form the high-bandwidth anode. The microstrips exit the package through the glass-frit seal of the anode base-plate and the package sidewall. The divider is thus completely internal, with no HV pins penetrating the low-profile flat glass package. Measurements of the performance of the divider are presented for the 8 in.-square MCP and spacer package in a custom test fixture and for an assembled externally pumped LAPPDTM prototype with an aluminum photocathode.

  11. An Internal ALD-Based High Voltage Divider and Signal Circuit for MCP-based Photodetectors

    SciTech Connect

    Adams, Bernhard W.; Elagin, Andrey; Elam, Jeffrey W.; Frisch, Henry J.; Genat, Jean-Francois; Gregar, Joseph S.; Mane, Anil U.; Minot, Michael J.; Northrup, Richard; Obaid, Razib; Oberla, Eric; Alexander, Vostrikov; Wetstein, Matthew

    2015-04-21

    We describe a pin-less design for the high voltage (HV) resistive divider of the all-glass LAPPD (TM) 8 in,square thin photodetector module. The divider, which distributes high voltage applied to the photocathode to the two micro-channel plates (MCPs) that constitute the amplification stage, is comprised of the two MCPs and three glass mechanical spacers, each of which is coated with a resistive layer using atomic layer deposition (ALD). The three glass grid spacers and the two MCPs form a continuous resistive path between cathode and anode, with the voltages across the MCPs and the spacers determined by the resistance of each. High voltage is applied on an external tab on the top glass window that connects to the photocathode through the metal seal. The DC ground is supplied by microstrips on the bottom glass plate that form the high-bandwidth anode. The microstrips exit the package through the glass-frit seal of the anode base-plate and the package sidewall. The divider is thus completely internal, with no HV pins penetrating the low-profile flat glass package. Measurements of the performance of the divider are presented for the 8 in.-square MCP and spacer package in a custom test fixture and for an assembled externally pumped LAPPD (TM) prototype with an aluminum photocathode. (C) 2015 Elsevier B.V. All rights reserved.

  12. CONDITIONING AND PROTECTION CIRCUITRY FOR EXTERNAL MODULATION OF A PREPROGRAMMED GYROTRON CATHODE VOLTAGE COMMAND WAVEFORM

    SciTech Connect

    PONCE,D; FERRON,J.R; LEGG,R.A

    2003-10-01

    OAK-B135 The modulating voltages applied to the DIII-D gyrotrons are controlled by reference signals which are synthesized by arbitrary waveform generators.These generators allow ECH operators to pre-program reference waveforms consisting of ramps, flat tops, and various modulation shapes. This capability is independent of the DIII-D central timing and waveform facilities, which provides the ECH operators operational flexibility. The waveform generators include an amplitude modulation input, providing a means to control the pre-programmed waveform externally. This input is being used to allow the DIII-D plasma control system (PCS) to control gyrotron power in response top selected feedback signals. As the PCS control signal could potentially modulate the gyrotrons beyond operational limits or otherwise in a manner leading to recalcitrant rf generation, the control signal is conditioned so that its effect upon the ECH pre-programmed reference waveform is limited by conditions set by the ECH operators. The design of the circuitry which restricts the range over which the PCS control signal may modulate the reference waveform will be discussed. Test and DIII-D experimental results demonstrating the utility and effectiveness of gyrotron power modulated by the PCS will be presented.

  13. A high voltage method for measuring low capacitance for tomography.

    PubMed

    Lu, Decai; Shao, Fuqun; Guo, Zhiheng

    2009-05-01

    Low capacitance measurement is involved in many industrial applications, especially in the applications of electrical capacitance tomography (ECT). Most of the low capacitance measurement circuits employ an ac-based method or a charge/discharge method because of high sensitivity, high resolution, and immunity to stray capacitance; and its excitation or charge voltage are not more than 20 V. When ECT techniques for large industrial equipment such as blast furnaces or grain barns are explored, the existing methods for measuring low capacitance have some limitations. This paper proposes a high excitation voltage ac-based method for measuring low capacitance to improve the resolution of measurement. The method uses a high excitation voltage of several hundred volts and a transformer ratio arms as the C/V transducer. Experimental results indicate that the new method has a resolution of 0.005 fF, a good stability (about 0.003 fF over 4 h) and linearity (0.9992).

  14. High voltage processing of the SLC polarized electron gun

    SciTech Connect

    Saez, P.; Clendenin, J.; Garden, C.; Hoyt, E.; Klaisner, L.; Prescott, C.; Schultz, D.; Tang, H.

    1993-04-01

    The SLC polarized electron gun operates at 120 kV with very low dark current to maintain the ultra high vacuum (UHV). This strict requirement protects the extremely sensitive photocathode from contaminants caused by high voltage (HV) activity. Thorough HV processing is thus required x-ray sensitive photographic film, a nanoammeter in series with gun power supply, a radiation meter, a sensitive residual gas analyzer and surface x-ray spectrometry were used to study areas in the gun where HV activity occurred. By reducing the electric field gradients, carefully preparing the HV surfaces and adhering to very strict clean assembly procedures, we found it possible to process the gun so as to reduce both the dark current at operating voltage and the probability of HV discharge. These HV preparation and processing techniques are described.

  15. High voltage insulation of bushing for HTS power equipment

    NASA Astrophysics Data System (ADS)

    Kim, Woo-Jin; Choi, Jae-Hyeong; Kim, Sang-Hyun

    2012-12-01

    For the operation of high temperature superconducting (HTS) power equipments, it is necessary to develop insulating materials and high voltage (HV) insulation technology at cryogenic temperature of bushing. Liquid nitrogen (LN2) is an attractive dielectric liquid. Also, the polymer insulating materials are expected to be used as solid materials such as glass fiber reinforced plastic (GFRP), polytetra-fluoroethylene (PTFE, Teflon), Silicon (Si) rubber, aromatic polyamide (Nomex), EPDM/Silicon alloy compound (EPDM/Si). In this paper, the surface flashover characteristics of various insulating materials in LN2 are studied. These results are studied at both AC and impulse voltage under a non-uniform field. The use of GFRP and Teflon as insulation body for HTS bushing should be much desirable. Especially, GFRP is excellent material not only surface flashover characteristics but also mechanical characteristics at cryogenic temperature. The surface flashover is most serious problem for the shed design in LN2 and operation of superconducting equipments.

  16. Pulse Evaluation of High Voltage SiC Diodes

    DTIC Science & Technology

    2007-06-01

    Different packaging options were also explored. The first group of diodes was encased in hard, caramel - colored , high temperature epoxy which...16-21 June 2013., The original document contains color images. 14. ABSTRACT The U. S. Army Research Laboratory (ARL) is evaluating silicon carbide...individually at increasing voltage and current levels until failure in order to narrow down the peak current limitation of the devices

  17. High-Voltage Current Transformers With Optical Signal Transmission

    NASA Astrophysics Data System (ADS)

    Malewski, Ryszard

    1981-02-01

    Existing prototype optical current transformers are reviewed and their design as well as their functional characteristics are analyzed in the light of the practical requirements dictated by operating conditions in an extra-high-voltage (EHV) switchyard. A perspective of the development of a new magneto-optic current transformer is explored. The feasibility of such apparatus depends on technological progress in manufacturing mono-mode optical fibers which will not depolarize the transmitted light.

  18. Reliability and Characterization of High Voltage Power Capacitors

    DTIC Science & Technology

    2014-03-01

    electrical characteristics, such as stability, wide temperature range, or ability to 7 withstand very high voltages. Polypropylene (PP) film capacitors are...healing [8]. This is an important feature for some applications, and is purely due to the manufacturing process of the thin film capacitor... manufacturing , the band gap magnitude has a value of 1.12 electron volts (eV). For the thin film capacitor, the band gap magnitude of PP is 7.0 (eV) [14

  19. Switching of High-Voltage Cable Lines with Shunt Reactors

    SciTech Connect

    Sheskin, E. B.; Evdokunin, G. A.

    2016-05-15

    The problem of disconnecting high-voltage cable lines with shunt reactors by SF{sub 6} circuit breakers is discussed. In these schemes it is possible to have a significant aperiodic component of the circuit breaker current that can prevent opening of the breaker. The authors propose methods for application to cable transmission lines which they believe will be optimal for ensuring normal disconnects.

  20. Integration Testing of a Modular Discharge Supply for NASA's High Voltage Hall Accelerator Thruster

    NASA Technical Reports Server (NTRS)

    Pinero, Luis R.; Kamhawi, hani; Drummond, Geoff

    2010-01-01

    NASA s In-Space Propulsion Technology Program is developing a high performance Hall thruster that can fulfill the needs of future Discovery-class missions. The result of this effort is the High Voltage Hall Accelerator thruster that can operate over a power range from 0.3 to 3.5 kW and a specific impulse from 1,000 to 2,800 sec, and process 300 kg of xenon propellant. Simultaneously, a 4.0 kW discharge power supply comprised of two parallel modules was developed. These power modules use an innovative three-phase resonant topology that can efficiently supply full power to the thruster at an output voltage range of 200 to 700 V at an input voltage range of 80 to 160 V. Efficiencies as high as 95.9 percent were measured during an integration test with the NASA103M.XL thruster. The accuracy of the master/slave current sharing circuit and various thruster ignition techniques were evaluated.

  1. High voltage systems (tube-type microwave)/low voltage system (solid-state microwave) power distribution

    NASA Technical Reports Server (NTRS)

    Nussberger, A. A.; Woodcock, G. R.

    1980-01-01

    SPS satellite power distribution systems are described. The reference Satellite Power System (SPS) concept utilizes high-voltage klystrons to convert the onboard satellite power from dc to RF for transmission to the ground receiving station. The solar array generates this required high voltage and the power is delivered to the klystrons through a power distribution subsystem. An array switching of solar cell submodules is used to maintain bus voltage regulation. Individual klystron dc voltage conversion is performed by centralized converters. The on-board data processing system performs the necessary switching of submodules to maintain voltage regulation. Electrical power output from the solar panels is fed via switch gears into feeder buses and then into main distribution buses to the antenna. Power also is distributed to batteries so that critical functions can be provided through solar eclipses.

  2. Molecular Template for a Voltage Sensor in a Novel K+ Channel. III. Functional Reconstitution of a Sensorless Pore Module from a Prokaryotic Kv Channel

    PubMed Central

    Santos, Jose S.; Grigoriev, Sergey M.; Montal, Mauricio

    2008-01-01

    KvLm is a prokaryotic voltage-gated K+ (Kv) channel from Listeria monocytogenes. The sequence of the voltage-sensing module (transmembrane segments S1-S4) of KvLm is atypical in that it contains only three of the eight conserved charged residues known to be deterministic for voltage sensing in eukaryotic Kv's. In contrast, the pore module (PM), including the S4-S5 linker and cytoplasmic tail (linker-S5-P-S6-C-terminus) of KvLm, is highly conserved. Here, the full-length (FL)-KvLm and the KvLm-PM only proteins were expressed, purified, and reconstituted into giant liposomes. The properties of the reconstituted FL-KvLm mirror well the characteristics of the heterologously expressed channel in Escherichia coli spheroplasts: a right-shifted voltage of activation, micromolar tetrabutylammonium-blocking affinity, and a single-channel conductance comparable to that of eukaryotic Kv's. Conversely, ionic currents through the PM recapitulate both the conductance and blocking properties of the FL-KvLm, yet the KvLm-PM exhibits only rudimentary voltage dependence. Given that the KvLm-PM displays many of the conduction properties of FL-KvLm and of other eukaryotic Kv's, including strict ion selectivity, we conclude that self-assembly of the PM subunits in lipid bilayers, in the absence of the voltage-sensing module, generates a conductive oligomer akin to that of the native KvLm, and that the structural independence of voltage sensing and PMs observed in eukaryotic Kv channels was initially implemented by nature in the design of prokaryotic Kv channels. Collectively, the results indicate that this robust functional module will prove valuable as a molecular template for coupling new sensors and to elucidate PM residue–specific contributions to Kv conduction properties. PMID:19029373

  3. Molecular template for a voltage sensor in a novel K+ channel. III. Functional reconstitution of a sensorless pore module from a prokaryotic Kv channel.

    PubMed

    Santos, Jose S; Grigoriev, Sergey M; Montal, Mauricio

    2008-12-01

    KvLm is a prokaryotic voltage-gated K(+) (Kv) channel from Listeria monocytogenes. The sequence of the voltage-sensing module (transmembrane segments S1-S4) of KvLm is atypical in that it contains only three of the eight conserved charged residues known to be deterministic for voltage sensing in eukaryotic Kv's. In contrast, the pore module (PM), including the S4-S5 linker and cytoplasmic tail (linker-S5-P-S6-C-terminus) of KvLm, is highly conserved. Here, the full-length (FL)-KvLm and the KvLm-PM only proteins were expressed, purified, and reconstituted into giant liposomes. The properties of the reconstituted FL-KvLm mirror well the characteristics of the heterologously expressed channel in Escherichia coli spheroplasts: a right-shifted voltage of activation, micromolar tetrabutylammonium-blocking affinity, and a single-channel conductance comparable to that of eukaryotic Kv's. Conversely, ionic currents through the PM recapitulate both the conductance and blocking properties of the FL-KvLm, yet the KvLm-PM exhibits only rudimentary voltage dependence. Given that the KvLm-PM displays many of the conduction properties of FL-KvLm and of other eukaryotic Kv's, including strict ion selectivity, we conclude that self-assembly of the PM subunits in lipid bilayers, in the absence of the voltage-sensing module, generates a conductive oligomer akin to that of the native KvLm, and that the structural independence of voltage sensing and PMs observed in eukaryotic Kv channels was initially implemented by nature in the design of prokaryotic Kv channels. Collectively, the results indicate that this robust functional module will prove valuable as a molecular template for coupling new sensors and to elucidate PM residue-specific contributions to Kv conduction properties.

  4. High Voltage Tests in the LUX-ZEPLIN System Test

    NASA Astrophysics Data System (ADS)

    Whitis, Thomas; Lux-Zeplin Collaboration

    2016-03-01

    The LUX-ZEPLIN (LZ) project is a dark matter direct detection experiment using liquid xenon. The detector is a time projection chamber (TPC) requiring the establishment of a large electric field inside of the detector in order to drift ionization electrons. Historically, many xenon TPC designs have been unable to reach their design fields due to light production and breakdown. The LZ System Test is scaled so that with a cathode voltage of -50 kV, it will have the fields that will be seen in the LZ detector at -100 kV. It will use a fully instrumented but scaled-down version of the LZ TPC design with a vessel set and gas system designed for quick turnaround, allowing for iterative modifications to the TPC prototype and instrumentation. This talk will present results from the high voltage tests performed during the first runs of the LZ System Test.

  5. Modeling of High-voltage Breakdown in Helium

    NASA Astrophysics Data System (ADS)

    Xu, Liang; Khrabrov, Alexander; Kaganovich, Igor; Sommerer, Timothy

    2016-09-01

    We investigate the breakdown in extremely high reduced electric fields (E/N) between parallel-plate electrodes in helium. The left branch of the Paschen curve in the voltage range of 20-350kV and inter-electrode gap range of 0.5-3.5cm is studied analytically and with Monte-Carlo/PIC simulations. The model incorporates electron, ion, and fast neutral species whose energy-dependent anisotropic scattering, as well as backscattering at the electrodes, is carefully taken into account. Our model demonstrates that (1) anisotropic scattering is indispensable for producing reliable results at such high voltage and (2) due to the heavy species backscattered at cathode, breakdown can occur even without electron- and ion-induced ionization of the background gas. Fast atoms dominate in the breakdown process more and more as the applied voltage is increased, due to their increasing ionization cross-section and to the copious flux of energetic fast atoms generated in charge-exchange collisions.

  6. Loss Reduction on Adoption of High Voltage LT Less Distribution

    NASA Astrophysics Data System (ADS)

    Tiwari, Deepika; Adhikari, Nikhileshwar Prasad; Gupta, Amit; Bajpai, Santosh Kumar

    2016-06-01

    In India there is a need to improve the quality of the electricity distribution process which has increased varying from year to year. In distribution networks, the limiting factor to load carrying capacity is generally the voltage reduction. High voltage distribution system (HVDS) is one of the steps to reduce line losses in electrical distribution network. It helps to reduce the length of low tension (LT) lines and makes the power available close to the users. The high voltage power distribution system reduces the probability of power theft by hooking HVDS suggests an increase in installation of small capacity single-phase transformers in the network which again save considerable energy. This paper is compared to existing conventional low tension distribution network with HVDS. The paper gives a clear picture of reduction in distribution losses with adoption of HVDS system. Losses Reduction of 11 kV Feeder in Nuniya (India) with adoption of HVDS have been worked out/ quantified and benefits thereby in generating capacity have discussed.

  7. 9xx high power pump modules

    NASA Astrophysics Data System (ADS)

    Pawlik, Susanne; Sverdlov, Boris; Bättig, Rainer; Schmidt, Berthold; Pfeiffer, Hans-Ulrich; Arlt, Sebastian; Lichtenstein, Norbert; Müller, Jürgen; Troger, Jörg; Valk, Bernd; Harder, Christoph

    2006-02-01

    In this communication we present the characteristics of Bookham's MU7-9xx-01 laser module with multimode fiber output. This latest generation of our multimode modules is designed for light output power of up to 7 W in uncooled operation in the wavelength range between 915 nm and 975 nm. The key element of the module is our new SES8-9xx-01 broad area single emitter. These high power lasers in the 9xx nm wavelength range show a high slope efficiency of up to 1.2 W/A in CW room temperature operation. High efficiency combined with low threshold current and low operation voltage result in a maximum wall plug efficiency of above 65%. Almost 4000 h lifetest data at accelerated conditions are available for the laser diodes. The data give estimated reliability values of below 5 kFIT at operating conditions (between 8 A and 8.5 A injection current at up to 35°C heat sink temperature). The robustness of the new lasers is also illustrated by the fact that no catastrophic mirror damage was observed up to 22.5 W of light output power. The low divergence of the laser beam allows coupling into multimode fiber with 0.15 or 0.22 numerical aperture (NA) with a coupling efficiency above 90% at operation condition. Maximum ex-fiber light output powers of 11.5 W are shown. On module level around 2000 h lifetest data are accumulated without any failure or sign of degradation.

  8. Switch contact device for interrupting high current, high voltage, AC and DC circuits

    DOEpatents

    Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

    2005-01-04

    A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

  9. High power solid state laser modulator

    DOEpatents

    Birx, Daniel L.; Ball, Don G.; Cook, Edward G.

    2004-04-27

    A multi-stage magnetic modulator provides a pulse train of .+-.40 kV electrical pulses at a 5-7 kHz repetition rate to a metal vapor laser. A fractional turn transformer steps up the voltage by a factor of 80 to 1 and magnetic pulse compression is used to reduce the pulse width of the pulse train. The transformer is fabricated utilizing a rod and plate stack type of construction to achieve a high packing factor. The pulses are controlled by an SCR stack where a plurality of SCRs are electrically connected in parallel, each SCR electrically connected to a saturable inductor, all saturable inductors being wound on the same core of magnetic material for enhanced power handling characteristics.

  10. Experimental validation of a high voltage pulse measurement method.

    SciTech Connect

    Cular, Stefan; Patel, Nishant Bhupendra; Branch, Darren W.

    2013-09-01

    This report describes X-cut lithium niobates (LiNbO3) utilization for voltage sensing by monitoring the acoustic wave propagation changes through LiNbO3 resulting from applied voltage. Direct current (DC), alternating current (AC) and pulsed voltage signals were applied to the crystal. Voltage induced shift in acoustic wave propagation time scaled quadratically for DC and AC voltages and linearly for pulsed voltages. The measured values ranged from 10 - 273 ps and 189 ps 2 ns for DC and non-DC voltages, respectively. Data suggests LiNbO3 has a frequency sensitive response to voltage. If voltage source error is eliminated through physical modeling from the uncertainty budget, the sensors U95 estimated combined uncertainty could decrease to ~0.025% for DC, AC, and pulsed voltage measurements.

  11. A SQUID gradiometer module with wire-wound pickup antenna and integrated voltage feedback circuit

    NASA Astrophysics Data System (ADS)

    Zhang, Guofeng; Zhang, Yi; Zhang, Shulin; Krause, Hans-Joachim; Wang, Yongliang; Liu, Chao; Zeng, Jia; Qiu, Yang; Kong, Xiangyan; Dong, Hui; Xie, Xiaoming; Offenhäusser, Andreas; Jiang, Mianheng

    2012-10-01

    The performance of the direct readout schemes for dc SQUID, Additional Positive Feedback (APF), noise cancellation (NC) and SQUID bootstrap circuit (SBC), have been studied in conjunction with planar SQUID magnetometers. In this paper, we examine the NC technique applied to a niobium SQUID gradiometer module with an Nb wire-wound antenna connecting to a dual-loop SQUID chip with an integrated voltage feedback circuit for suppression of the preamplifier noise contribution. The sensitivity of the SQUID gradiometer module is measured to be about 1 fT/(cm √Hz) in the white noise range in a magnetically shielded room. Using such gradiometer, both MCG and MEG signals are recorded.

  12. A magnesium–sodium hybrid battery with high operating voltage

    SciTech Connect

    Dong, Hui; Li, Yifei; Liang, Yanliang; Li, Guosheng; Sun, Cheng-Jun; Ren, Yang; Lu, Yuhao; Yao, Yan

    2016-06-10

    We report a high performance magnesium-sodium hybrid battery utilizing a magnesium-sodium dual-salt electrolyte, a magnesium anode, and a Berlin green cathode. The cell delivers an average discharge voltage of 2.2 V and a reversible capacity of 143 mAh g-1. We also demonstrate the cell with an energy density of 135 Wh kg-1 and a high power density of up to 1.67 kW kg-1.

  13. A magnesium–sodium hybrid battery with high operating voltage

    SciTech Connect

    Dong, Hui; Li, Yifei; Liang, Yanliang; Li, Guosheng; Sun, Cheng -Jun; Ren, Yang; Lu, Yuhao; Yao, Yan

    2016-06-10

    Here, we report a high performance magnesium-sodium hybrid battery utilizing a magnesium-sodium dual-salt electrolyte, a magnesium anode, and a Berlin green cathode. The cell delivers an average discharge voltage of 2.2 V and a reversible capacity of 143 mA h g–1. We also demonstrate the cell with an energy density of 135 W h kg–1 and a high power density of up to 1.67 kW kg–1.

  14. A magnesium–sodium hybrid battery with high operating voltage

    SciTech Connect

    Dong, Hui; Li, Yifei; Liang, Yanliang; Li, Guosheng; Sun, Cheng -Jun; Ren, Yang; Lu, Yuhao; Yao, Yan

    2016-06-10

    Here, we report a high performance magnesium-sodium hybrid battery utilizing a magnesium-sodium dual-salt electrolyte, a magnesium anode, and a Berlin green cathode. The cell delivers an average discharge voltage of 2.2 V and a reversible capacity of 143 mA h g–1. We also demonstrate the cell with an energy density of 135 W h kg–1 and a high power density of up to 1.67 kW kg–1.

  15. Electronically Tunable High Input Impedance Voltage-Mode Multifunction Filter

    NASA Astrophysics Data System (ADS)

    Chen, Hua-Pin; Yang, Wan-Shing

    A novel electronically tunable high input impedance voltage-mode multifunction filter with single inputs and three outputs employing two single-output-operational transconductance amplifiers, one differential difference current conveyor and two capacitors is proposed. The presented filter can be realized the highpass, bandpass and lowpass functions, simultaneously. The input of the filter exhibits high input impedance so that the synthesized filter can be cascaded without additional buffers. The circuit needs no any external resistors and employs two grounded capacitors, which is suitable for integrated circuit implementation.

  16. High Voltage Power Supply Design Guide for Space

    NASA Technical Reports Server (NTRS)

    Bever, Renate S.; Ruitberg, Arthur P.; Kellenbenz, Carl W.; Irish, Sandra M.

    2006-01-01

    This book is written for newcomers to the topic of high voltage (HV) in space and is intended to replace an earlier (1970s) out-of-print document. It discusses the designs, problems, and their solutions for HV, mostly direct current, electric power, or bias supplies that are needed for space scientific instruments and devices, including stepping supplies. Output voltages up to 30kV are considered, but only very low output currents, on the order of microamperes. The book gives a brief review of the basic physics of electrical insulation and breakdown problems, especially in gases. It recites details about embedment and coating of the supplies with polymeric resins. Suggestions on HV circuit parts follow. Corona or partial discharge testing on the HV parts and assemblies is discussed both under AC and DC impressed test voltages. Electric field analysis by computer on an HV device is included in considerable detail. Finally, there are many examples given of HV power supplies, complete with some of the circuit diagrams and color photographs of the layouts.

  17. Gate dielectric ion implantation to modulate the threshold voltage of In2O3 nanowire field effect transistors

    NASA Astrophysics Data System (ADS)

    Yu, Yang; Li, Wenqing; Wu, Pengcheng; Jiang, Changzhong; Xiao, Xiangheng

    2016-11-01

    In semiconductor technology, In2O3 nanowire field effect transistor (FET) can serve as an important building block due to its admirable electrical switching properties. However, the relatively too large threshold voltages and threshold voltage fluctuations of the devices may hinder their extensive applications. In this report, N+ ion implantation of gate dielectric was conducted to modulate the threshold voltage of In2O3 nanowire FET. Electrical measurements reveal that the threshold voltage can be reduced to as low as -2.0 V from the initial -23.2 V after ion implantation. This can be attributed to the effects of implantation induced electron traps. Moreover, it is found that the stability of threshold voltage can be improved by ion implantation. This simple and convenient method indicates that gate dielectric ion implantation may be a potential way to realize the low voltage operation and uniform In2O3 nanowire FETs.

  18. PIP2 regulation of KCNQ channels: biophysical and molecular mechanisms for lipid modulation of voltage-dependent gating.

    PubMed

    Zaydman, Mark A; Cui, Jianmin

    2014-01-01

    Voltage-gated potassium (Kv) channels contain voltage-sensing (VSD) and pore-gate (PGD) structural domains. During voltage-dependent gating, conformational changes in the two domains are coupled giving rise to voltage-dependent opening of the channel. In addition to membrane voltage, KCNQ (Kv7) channel opening requires the membrane lipid phosphatidylinositol 4,5-bisphosphate (PIP2). Recent studies suggest that PIP2 serves as a cofactor to mediate VSD-PGD coupling in KCNQ1 channels. In this review, we put these findings in the context of the current understanding of voltage-dependent gating, lipid modulation of Kv channel activation, and PIP2-regulation of KCNQ channels. We suggest that lipid-mediated coupling of functional domains is a common mechanism among KCNQ channels that may be applicable to other Kv channels and membrane proteins.

  19. PIP2 regulation of KCNQ channels: biophysical and molecular mechanisms for lipid modulation of voltage-dependent gating

    PubMed Central

    Zaydman, Mark A.; Cui, Jianmin

    2014-01-01

    Voltage-gated potassium (Kv) channels contain voltage-sensing (VSD) and pore-gate (PGD) structural domains. During voltage-dependent gating, conformational changes in the two domains are coupled giving rise to voltage-dependent opening of the channel. In addition to membrane voltage, KCNQ (Kv7) channel opening requires the membrane lipid phosphatidylinositol 4,5-bisphosphate (PIP2). Recent studies suggest that PIP2 serves as a cofactor to mediate VSD-PGD coupling in KCNQ1 channels. In this review, we put these findings in the context of the current understanding of voltage-dependent gating, lipid modulation of Kv channel activation, and PIP2-regulation of KCNQ channels. We suggest that lipid-mediated coupling of functional domains is a common mechanism among KCNQ channels that may be applicable to other Kv channels and membrane proteins. PMID:24904429

  20. KCNE1 remodels the voltage sensor of Kv7.1 to modulate channel function.

    PubMed

    Wu, Dick; Pan, Hua; Delaloye, Kelli; Cui, Jianmin

    2010-12-01

    The KCNE1 auxiliary subunit coassembles with the Kv7.1 channel and modulates its properties to generate the cardiac I(Ks) current. Recent biophysical evidence suggests that KCNE1 interacts with the voltage-sensing domain (VSD) of Kv7.1. To investigate the mechanism of how KCNE1 affects the VSD to alter the voltage dependence of channel activation, we perturbed the VSD of Kv7.1 by mutagenesis and chemical modification in the absence and presence of KCNE1. Mutagenesis of S4 in Kv7.1 indicates that basic residues in the N-terminal half (S4-N) and C-terminal half (S4-C) of S4 are important for stabilizing the resting and activated states of the channel, respectively. KCNE1 disrupts electrostatic interactions involving S4-C, specifically with the lower conserved glutamate in S2 (Glu(170) or E2). Likewise, Trp scanning of S4 shows that mutations to a cluster of residues in S4-C eliminate current in the presence of KCNE1. In addition, KCNE1 affects S4-N by enhancing MTS accessibility to the top of the VSD. Consistent with the structure of Kv channels and previous studies on the KCNE1-Kv7.1 interaction, these results suggest that KCNE1 alters the interactions of S4 residues with the surrounding protein environment, possibly by changing the protein packing around S4, thereby affecting the voltage dependence of Kv7.1.

  1. Improved Transient and Steady-State Performances of Series Resonant ZCS High-Frequency Inverter-Coupled Voltage Multiplier Converter with Dual Mode PFM Control Scheme

    NASA Astrophysics Data System (ADS)

    Chu, Enhui; Gamage, Laknath; Ishitobi, Manabu; Hiraki, Eiji; Nakaoka, Mutsuo

    The A variety of switched-mode high voltage DC power supplies using voltage-fed type or current-fed type high-frequency transformer resonant inverters using MOS gate bipolar power transistors; IGBTs have been recently developed so far for a medical-use X-ray high power generator. In general, the high voltage high power X-ray generator using voltage-fed high frequency inverter with a high voltage transformer link has to meet some performances such as (i) short rising period in start transient of X-ray tube voltage (ii) no overshoot transient response in tube voltage, (iii) minimized voltage ripple in periodic steady-state under extremely wide load variations and filament heater current fluctuation conditions of the X-ray tube. This paper presents two lossless inductor snubber-assisted series resonant zero current soft switching high-frequency inverter using a diode-capacitor ladder type voltage multiplier called Cockcroft-Walton circuit, which is effectively implemented for a high DC voltage X-ray power generator. This DC high voltage generator which incorporates pulse frequency modulated series resonant inverter using IGBT power module packages is based on the operation principle of zero current soft switching commutation scheme under discontinuous resonant current and continuous resonant current transition modes. This series capacitor compensated for transformer resonant power converter with a high frequency transformer linked voltage boost multiplier can efficiently work a novel selectively-changed dual mode PFM control scheme in order to improve the start transient and steady-state response characteristics and can completely achieve stable zero current soft switching commutation tube filament current dependent for wide load parameter setting values with the aid of two lossless inductor snubbers. It is proved on the basis of simulation and experimental results in which a simple and low cost control implementation based on selectively-changed dual-mode PFM for

  2. Curing system for high voltage cross linked cables

    DOEpatents

    Bahder, George; Katz, Carlos; Bopp, Louis A.

    1978-01-01

    This invention makes extruded, vulcanized, high voltage cables insulated with thermosetting compounds at much higher rates of production and with superior insulation of reduced thickness and with reduced cavities or voids in the insulation. As the cable comes from an extruder, it passes into a curing chamber with a heat booster that quickly raises the insulation to a temperature at which it is cured much more quickly than with steam heating of the prior art. A high temperature liquid in contact with the insulation maintains the high temperature; and because of the greater curing heat, the cable can travel through the curing chamber at a faster rate and into a cooling tube where it contacts with a cooling liquid under high pressure. The insulation compound is treated to reduce the size of cavities; and the high pressure maintained by the curing and cooling mediums prevent expansion of cavities before the insulation is set.

  3. High Power, High Voltage FETs in Linear Applications: A User's Perspective

    SciTech Connect

    N. Greenough, E. Fredd, S. DePasquale

    2009-09-21

    The specifications of the current crop of highpower, high-voltage field-effect transistors (FETs) can lure a designer into employing them in high-voltage DC equipment. Devices with extremely low on-resistance and very high power ratings are available from several manufacturers. However, our experience shows that high-voltage, linear operation of these devices at near-continuous duty can present difficult reliability challenges at stress levels well-below their published specifications. This paper chronicles the design evolution of a 600 volt, 8 ampere shunt regulator for use with megawatt-class radio transmitters, and presents a final design that has met its reliability criteria.

  4. 49 CFR 229.85 - High voltage markings: doors, cover plates, or barriers.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 49 Transportation 4 2014-10-01 2014-10-01 false High voltage markings: doors, cover plates, or... Requirements Electrical System § 229.85 High voltage markings: doors, cover plates, or barriers. All doors, cover plates, or barriers providing direct access to high voltage equipment shall be marked “Danger-High...

  5. 49 CFR 229.85 - High voltage markings: doors, cover plates, or barriers.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 49 Transportation 4 2013-10-01 2013-10-01 false High voltage markings: doors, cover plates, or... Requirements Electrical System § 229.85 High voltage markings: doors, cover plates, or barriers. All doors, cover plates, or barriers providing direct access to high voltage equipment shall be marked “Danger-High...

  6. 49 CFR 229.85 - High voltage markings: doors, cover plates, or barriers.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 4 2012-10-01 2012-10-01 false High voltage markings: doors, cover plates, or... Requirements Electrical System § 229.85 High voltage markings: doors, cover plates, or barriers. All doors, cover plates, or barriers providing direct access to high voltage equipment shall be marked “Danger-High...

  7. 30 CFR 77.800 - High-voltage circuits; circuit breakers.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false High-voltage circuits; circuit breakers. 77.800... COAL MINES Surface High-Voltage Distribution § 77.800 High-voltage circuits; circuit breakers. High... circuit breaker or fuses of the correct type and capacity. ...

  8. 30 CFR 77.800 - High-voltage circuits; circuit breakers.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false High-voltage circuits; circuit breakers. 77.800... COAL MINES Surface High-Voltage Distribution § 77.800 High-voltage circuits; circuit breakers. High... circuit breaker or fuses of the correct type and capacity. ...

  9. 30 CFR 77.800 - High-voltage circuits; circuit breakers.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 1 2014-07-01 2014-07-01 false High-voltage circuits; circuit breakers. 77.800... COAL MINES Surface High-Voltage Distribution § 77.800 High-voltage circuits; circuit breakers. High... circuit breaker or fuses of the correct type and capacity. ...

  10. Modulation of the Dirac point voltage of graphene by ion-gel dielectrics and its application to soft electronic devices.

    PubMed

    Kim, Un Jeong; Kim, Tae Geun; Shim, Youngseon; Park, Yeonsang; Lee, Chang-Won; Kim, Tae-Ho; Lee, Hyo Sug; Chung, Dae-Young; Kihm, Jineun; Roh, Young-Geun; Lee, Jaesoong; Son, Hyungbin; Kim, Sangsig; Hur, Jaehyun; Hwang, Sung Woo

    2015-01-27

    We investigated systematic modulation of the Dirac point voltage of graphene transistors by changing the type of ionic liquid used as a main gate dielectric component. Ion gels were formed from ionic liquids and a non-triblock-copolymer-based binder involving UV irradiation. With a fixed cation (anion), the Dirac point voltage shifted to a higher voltage as the size of anion (cation) increased. Mechanisms for modulation of the Dirac point voltage of graphene transistors by designing ionic liquids were fully understood using molecular dynamics simulations, which excellently matched our experimental results. It was found that the ion sizes and molecular structures play an essential role in the modulation of the Dirac point voltage of the graphene. Through control of the position of their Dirac point voltages on the basis of our findings, complementary metal-oxide-semiconductor (CMOS)-like graphene-based inverters using two different ionic liquids worked perfectly even at a very low source voltage (V(DD) = 1 mV), which was not possible for previous works. These results can be broadly applied in the development of low-power-consumption, flexible/stretchable, CMOS-like graphene-based electronic devices in the future.

  11. Adult cancers near high-voltage overhead power lines.

    PubMed

    Elliott, Paul; Shaddick, Gavin; Douglass, Margaret; de Hoogh, Kees; Briggs, David J; Toledano, Mireille B

    2013-03-01

    Extremely low-frequency magnetic fields are designated as possibly carcinogenic in humans, based on an epidemiologic association with childhood leukemia. Evidence for associations with adult cancers is weaker and inconsistent. We conducted a case-control study to investigate risks of adult cancers in relation to distance and extremely low-frequency magnetic fields from high-voltage overhead power lines using National Cancer Registry Data in England and Wales, 1974-2008. The study included 7823 leukemia, 6781 brain/central nervous system cancers, 9153 malignant melanoma, 29,202 female breast cancer cases, and 79,507 controls frequency-matched on year and region (three controls per case except for female breast cancer, one control per case) 15-74 years of age living within 1000 m of a high-voltage overhead power line. There were no clear patterns of excess risk with distance from power lines. After adjustment for confounders (age, sex [except breast cancer], deprivation, rurality), for distances closest to the power lines (0-49 m) compared with distances 600-1000 m, odds ratios (ORs) ranged from 0.82 (95% confidence interval = 0.61-1.11; 66 cases) for malignant melanoma to 1.22 (0.88-1.69) for brain/central nervous system cancer. We observed no meaningful excess risks and no trends of risk with magnetic field strength for the four cancers examined. In adjusted analyses at the highest estimated field strength, ≥1000 nanotesla (nT), compared with <100 nT, ORs ranged from 0.68 (0.39-1.17) for malignant melanoma to 1.08 (0.77-1.51) for female breast cancer. Our results do not support an epidemiologic association of adult cancers with residential magnetic fields in proximity to high-voltage overhead power lines.

  12. DEMONSTRATION BULLETIN: HIGH VOLTAGE ELECTRON BEAM TECHNOLOGY - HIGH VOLTAGE ENVIRONMENTAL APPLICATIONS, INC.

    EPA Science Inventory

    The high energy electron beam irradiation technology is a low temperature method for destroying complex mixtures of hazardous organic chemicals in solutions containing solids. The system consists of a computer-automated, portable electron beam accelerator and a delivery system. T...

  13. DEMONSTRATION BULLETIN: HIGH VOLTAGE ELECTRON BEAM TECHNOLOGY - HIGH VOLTAGE ENVIRONMENTAL APPLICATIONS, INC.

    EPA Science Inventory

    The high energy electron beam irradiation technology is a low temperature method for destroying complex mixtures of hazardous organic chemicals in solutions containing solids. The system consists of a computer-automated, portable electron beam accelerator and a delivery system. T...

  14. Substitutions in the Domain III Voltage-sensing Module Enhance the Sensitivity of an Insect Sodium Channel to a Scorpion β-Toxin*

    PubMed Central

    Song, Weizhong; Du, Yuzhe; Liu, Zhiqi; Luo, Ningguang; Turkov, Michael; Gordon, Dalia; Gurevitz, Michael; Goldin, Alan L.; Dong, Ke

    2011-01-01

    Scorpion β-toxins bind to the extracellular regions of the voltage-sensing module of domain II and to the pore module of domain III in voltage-gated sodium channels and enhance channel activation by trapping and stabilizing the voltage sensor of domain II in its activated state. We investigated the interaction of a highly potent insect-selective scorpion depressant β-toxin, Lqh-dprIT3, from Leiurus quinquestriatus hebraeus with insect sodium channels from Blattella germanica (BgNav). Like other scorpion β-toxins, Lqh-dprIT3 shifts the voltage dependence of activation of BgNav channels expressed in Xenopus oocytes to more negative membrane potentials but only after strong depolarizing prepulses. Notably, among 10 BgNav splice variants tested for their sensitivity to the toxin, only BgNav1-1 was hypersensitive due to an L1285P substitution in IIIS1 resulting from a U-to-C RNA-editing event. Furthermore, charge reversal of a negatively charged residue (E1290K) at the extracellular end of IIIS1 and the two innermost positively charged residues (R4E and R5E) in IIIS4 also increased the channel sensitivity to Lqh-dprIT3. Besides enhancement of toxin sensitivity, the R4E substitution caused an additional 20-mV negative shift in the voltage dependence of activation of toxin-modified channels, inducing a unique toxin-modified state. Our findings provide the first direct evidence for the involvement of the domain III voltage-sensing module in the action of scorpion β-toxins. This hypersensitivity most likely reflects an increase in IIS4 trapping via allosteric mechanisms, suggesting coupling between the voltage sensors in neighboring domains during channel activation. PMID:21454658

  15. A High-Voltage Bipolar Transconductance Amplifier for Electrotactile Stimulation

    PubMed Central

    Schaning, Matthew A.; Kaczmarek, Kurt A.

    2008-01-01

    This article describes a high-performance transconductance amplifier specifically designed for electrotactile (electrocutaneous) stimulation. It enables voltages up to ±600 V to be produced at the output which will allow the psychophysiological performance associated with stimulation of the fingertip using various stimulation waveforms to be studied more thoroughly. The design has a transconductance of up to 20 mA/V, an 8.8-MΩ output resistance, and can provide output currents up to ±20 mA. A complete schematic diagram is presented along with a discussion of theory of operation and safety issues as well as performance and derating plots from the implemented design. PMID:18838369

  16. Self-monitoring high voltage transmission line suspension insulator

    DOEpatents

    Stemler, Gary E.; Scott, Donald N.

    1981-01-01

    A high voltage transmission line suspension insulator (18 or 22) which monitors its own dielectric integrity. A dielectric rod (10) has one larger diameter end fitting attachable to a transmission line and another larger diameter end fitting attachable to a support tower. The rod is enclosed in a dielectric tube (14) which is hermetically sealed to the rod's end fittings such that a liquidtight space (20) is formed between the rod and the tube. A pressurized dielectric liquid is placed within that space. A discoloring dye placed within this space is used to detect the loss of the pressurized liquid.

  17. High-voltage R-F feedthrough bushing

    DOEpatents

    Grotz, G.F.

    1982-09-03

    Described is a multi-element, high voltage radio frequency bushing for transmitting rf energy to an antenna located in a vacuum container. The bushing includes a center conductor of complex geometrical shape, an outer coaxial shield conductor, and a thin-walled hollow truncated cone insulator disposed between central and outer conductors. The shape of the center conductor, which includes a reverse curvature portion formed of a radially inwardly directed shoulder and a convex portion, controls the uniformity of the axial surface gradient on the insulator cone. The outer shield has a first substantially cylindrical portion and a second radially inwardly extending truncated cone portion.

  18. Worldwide reliability surveys of high voltage circuit breakers

    SciTech Connect

    Heising, C.R.

    1995-05-01

    This article reports on the results of two CIGRE 13.06 Working Group worldwide surveys of the reliability of high voltage circuit breakers, 63 kV and above. The first inquiry included 78,000 breaker-years of ``in service data`` from 102 utilities in 22 countries during the years 1974--1977 and included all interrupting technologies. The second inquiry included 70,708 breaker-years from 132 utilities in 22 countries for the years 1988--1991 and only included single-pressure SF6 breakers, because this is what most utilities are now buying. Thirty-one US utilities submitted data.

  19. DC buffering and floating current for a high voltage IMB application

    SciTech Connect

    Morrison, J. L.

    2014-08-01

    An interface technique for the latest generation of the Impedance Measurement Box (IMB) has been conceived to enable measurement of impedance spectra for battery modules up to 300V. A 300V capable or higher IMB is an enabling technology for in-situ diagnostics within electric vehicle charging stations or battery back-ups within power distribution sub-stations. It is possible that the existing IMB can be adapted via a 300V interface module to a test battery with voltage significantly greater than 50V. Recently a new concept was conceived for the calibration, algorithm and electronics of the IMB. That algorithm and calibration for that concept have been physically validated. The principal feature of the new electronics is the floating current source excitation of the battery under test. The single ended current excitation of the battery under test, used in the 50V IMB, requires that the negative terminal of the test battery must be the analog ground for the IMB. The new floating current technique allows the test battery to be fully high impedance isolated for a measurement. That isolation will improve IMB noise immunity and enable interrogation of cells internal to a battery module. All these techniques still use the same rapid concept for impedance measurement with the IMB. The purpose of this disclosure is to provide an overview of the analytical validation for three concepts to interface the floating current excitation to a high voltage battery. Recursive simulation models were used in different test scenarios to validate the various new concepts. The analysis will show that it is possible to interface the floating signal current to obtain an impedance measurement on a high voltage test battery. Additionally, the analysis will investigate stress seen by electronics while testing a 300V battery.

  20. Characterization of a pulsed mode high voltage power supply for nuclear detectors

    NASA Astrophysics Data System (ADS)

    Ghazali, A. B.; Ahmad, T. S.; Abdullah, N. A.

    2013-06-01

    This paper discusses the characterization of a pulsed mode high voltage power supply (HVPS) using LT1073 chip. The pulsed modulated signal generated from this chip is amplified using a step-up ferrite core transformer of 1:20 turn ratio and then further multiplied and converted into DC high voltage output using a diode-capacitor arrangement. The circuit is powered by a 9V alkaline battery but regulated at 5V supply. It was found that the output for this setup is 520V, 87 μA with 10% load regulation. This output is suitable to operate a pancake-type GM detector, typically model LND 7317 where the plateau is from 475V to 675V. It was also found that when a β-source with intensity of 120 cps is used, the power consumption of the circuit is 5 V, 10.1 mA only. When the battery was left 'on' for 40 hours continuously, the battery's voltage has dropped to 6.9V, meaning that the 5V supply as well as 520V output is still maintained. It is noted that the minimum output voltage of 475V has reached when the regulated supply has reduced to 4.6V and consequently the 9V battery dropped to 6.5V, and this had happened after approximately 3 days of continuous operation. The power efficiency for this circuitry was found to be 89.5%. This result has far better in performance since the commercial portable equipment of this type has normally specified that not less than 8 hours continuous operation only. On the circuit design for this power supply, it was found that the enveloped frequency is 133 Hz with approximately 50% duty cycle. The modulated frequency during 'on' state was found to be 256 KHz in which the majority of power consumption is required.

  1. An accurate continuous calibration system for high voltage current transformer

    SciTech Connect

    Tong Yue; Li Binhong

    2011-02-15

    A continuous calibration system for high voltage current transformers is presented in this paper. The sensor of this system is based on a kind of electronic instrument current transformer, which is a clamp-shape air core coil. This system uses an optical fiber transmission system for its signal transmission and power supply. Finally the digital integrator and fourth-order convolution window algorithm as error calculation methods are realized by the virtual instrument with a personal computer. It is found that this system can calibrate a high voltage current transformer while energized, which means avoiding a long calibrating period in the power system and the loss of power metering expense. At the same time, it has a wide dynamic range and frequency band, and it can achieve a high accuracy measurement in a complex electromagnetic field environment. The experimental results and the on-site operation results presented in the last part of the paper, prove that it can reach the 0.05 accuracy class and is easy to operate on site.

  2. High Voltage Breakdown Levels in Various EPC Potting Materials

    NASA Technical Reports Server (NTRS)

    Komm, David S.

    2006-01-01

    This viewgraph presentation reviews exploration activities at JPL into various potting materials. Since high power space-borne microwave transmitters invariably use a vacuum tube as a final power amplifier, and this tube requires high electrode voltages for operation. The associated high voltage insulation typically represents a significant fraction of the mass of the transmitter. Since mass is always a premium resource on board spacecraft, we have been investigating materials with the potential to reduce the mass required for our applications here at JPL. This paper describes electrical breakdown results obtained with various potting materials. Conathane EN-11 (polyurethane) is the traditional HVPS encapsulant at JPL, but due to temperature limitations and durability issues it was deemed inappropriate for the particular application (i.e., CloudSat radar). The choices for the best available materials were epoxies, or silicones. Epoxies are too rigid, and were deemed inadvisable. Two silicones were further investigated (i.e.,ASTM E595- 93e2: GE RTV566(R) and Dow Corning 93-500X(R), another compound was considered (i.e., DC material, Sylgard 184(R)). "Loading" (adding filler materials) the potting compound will frequently alter the final material properties. Powdered alumina and borosilicate glass known as "microballoons" were investigated as possible loading materials. The testing of the materials is described. Each of the two loading materials offers advantages and disadvantages. The advantages and disadvantages are described.

  3. Radiation damage in high voltage silicon solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Brandhorst, H., Jr.; Swartz, C. K.; Weizer, V. G.

    1980-01-01

    Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE cell). The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

  4. High voltage protection in active matrix flat-panel imagers

    NASA Astrophysics Data System (ADS)

    Lehnert, Joerg; Zhao, Wei

    2006-03-01

    Various direct and indirect active matrix flat-panel imagers (AMFPI) are being investigated for x-ray imaging. In both direct AMFPI and indirect AMFPI with avalanche gain, a bias potential up to several thousand volts is required to operate the photoconductor. Under the condition of a large amount of radiation exposure between subsequent readout, a potential >80 V could appear across the amorphous silicon (a-Si) thin film transistor (TFT) and cause permanent damage. The purpose of this paper is to investigate a simple pixel design for high voltage protection. The pixel electrode acts as an additional gate for the top channel of an a-Si TFT to drain excess image charge from the pixel electrode until an equilibrium is reached where the TFT channel current equals the detector signal current at a predetermined safe maximum value V Pmax for the pixel potential. This "dual-gate" TFT structure without additional protective device simplifies the TFT array design and improves yield. However special care is required to understand the characteristics of both the top and the bottom gates to ensure sufficient detector dynamic range as well as reliable high voltage protection. A physical model for dual-gate a-Si TFTs was developed and device parameters were determined by fitting the model to measured characteristics from a dual-gate TFT array. Our results showed that compared to the bottom (normal) gate, the protective gate has a shallower transfer characteristics (i.e. channel current as a function of gate voltage) due to a higher density of states in the top interface. Nevertheless it provides adequate protection of the TFT with V Pmax of ~40 V for typical radiographic exposures.

  5. 30 CFR 77.704-1 - Work on high-voltage lines.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Work on high-voltage lines. 77.704-1 Section 77... MINES Grounding § 77.704-1 Work on high-voltage lines. (a) No high-voltage line shall be regarded as... provided in § 77.103) that such high-voltage line has been deenergized and grounded. Such qualified...

  6. High-Voltage Power Supply With Fast Rise and Fall Times

    NASA Technical Reports Server (NTRS)

    Bearden, Douglas B.; Acker, Richard M.; Kapuslka, Robert E.

    2007-01-01

    A special-purpose high-voltage power supply can be electronically switched on and off with fast rise and fall times, respectively. The output potential is programmable from 20 to 1,250 V. An output current of 50 A can be sustained at 1,250 V. The power supply was designed specifically for electronically shuttering a microchannel plate in an x-ray detector that must operate with exposure times as short as 1 ms. The basic design of the power supply is also adaptable to other applications in which there are requirements for rapid slewing of high voltages. The power-supply circuitry (see figure) includes a preregulator, which is used to program the output at 1/30 of the desired output potential. After the desired voltage has been set, the outputs of a pulse width modulator (PWM) are enabled and used to amplify the preregulator output potential by 30. The amplification is achieved by use of two voltage doublers with a transformer that has two primary and two secondary windings. A resistor is used to limit the current by controlling the drive voltage of two field-effect transistors (FETs) during turn-on of the PWM. A pulse transformer is used to turn on four FETs to short-circuit four output capacitors when the outputs of the PWM have been disabled. The most notable aspects of the performance of the power supply are a rise time of only 80 s and a fall time of only 60 s at a load current of 50 A or less. Another notable aspect is that the application of a 0-to-5-V square wave to a shutdown pin of the PWM causes the production of a 0-to-1,250-V square wave at the output terminals.

  7. A High Voltage Ratio and Low Ripple Interleaved DC-DC Converter for Fuel Cell Applications

    PubMed Central

    Chang, Long-Yi; Chao, Kuei-Hsiang; Chang, Tsang-Chih

    2012-01-01

    This paper proposes a high voltage ratio and low ripple interleaved boost DC-DC converter, which can be used to reduce the output voltage ripple. This converter transfers the low DC voltage of fuel cell to high DC voltage in DC link. The structure of the converter is parallel with two voltage-doubler boost converters by interleaving their output voltages to reduce the voltage ripple ratio. Besides, it can lower the current stress for the switches and inductors in the system. First, the PSIM software was used to establish a proton exchange membrane fuel cell and a converter circuit model. The simulated and measured results of the fuel cell output characteristic curve are made to verify the correctness of the established simulation model. In addition, some experimental results are made to validate the effectiveness in improving output voltage ripple of the proposed high voltage ratio interleaved boost DC-DC converters. PMID:23365536

  8. Low power, high voltage power supply with fast rise/fall time

    NASA Technical Reports Server (NTRS)

    Bearden, Douglas B. (Inventor)

    2007-01-01

    A low power, high voltage power supply system includes a high voltage power supply stage and a preregulator for programming the power supply stage so as to produce an output voltage which is a predetermined fraction of a desired voltage level. The power supply stage includes a high voltage, voltage doubler stage connected to receive the output voltage from the preregulator and for, when activated, providing amplification of the output voltage to the desired voltage level. A first feedback loop is connected between the output of the preregulator and an input of the preregulator while a second feedback loop is connected between the output of the power supply stage and the input of the preregulator.

  9. Low Power, High Voltage Power Supply with Fast Rise/Fall Time

    NASA Technical Reports Server (NTRS)

    Bearden, Douglas B. (Inventor)

    2007-01-01

    A low power, high voltage power supply system includes a high voltage power supply stage and a preregulator for programming the power supply stage so as to produce an output voltage which is a predetermined fraction of a desired voltage level. The power supply stage includes a high voltage, voltage doubler stage connected to receive the output voltage from the preregulator and for, when activated, providing amplification of the output voltage to the desired voltage level. A first feedback loop is connected between the output of the preregulator and an input of the preregulator while a second feedback loop is connected between the output of the power supply stage and the input of the preregulator.

  10. 30 CFR 75.812-2 - High-voltage power centers and transformers; record of examination.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false High-voltage power centers and transformers; record of examination. 75.812-2 Section 75.812-2 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.812-2 High-voltage power centers and transformers; record of...

  11. 30 CFR 75.812-2 - High-voltage power centers and transformers; record of examination.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false High-voltage power centers and transformers; record of examination. 75.812-2 Section 75.812-2 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.812-2 High-voltage power centers and transformers; record of...

  12. 30 CFR 75.812-2 - High-voltage power centers and transformers; record of examination.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 1 2014-07-01 2014-07-01 false High-voltage power centers and transformers; record of examination. 75.812-2 Section 75.812-2 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.812-2 High-voltage power centers and transformers; record of...

  13. 30 CFR 77.704-1 - Work on high-voltage lines.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Work on high-voltage lines. 77.704-1 Section 77... AND HEALTH MANDATORY SAFETY STANDARDS, SURFACE COAL MINES AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Grounding § 77.704-1 Work on high-voltage lines. (a) No high-voltage line shall be regarded as...

  14. 30 CFR 77.704-1 - Work on high-voltage lines.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Work on high-voltage lines. 77.704-1 Section 77... AND HEALTH MANDATORY SAFETY STANDARDS, SURFACE COAL MINES AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Grounding § 77.704-1 Work on high-voltage lines. (a) No high-voltage line shall be regarded as...

  15. 30 CFR 75.705-1 - Work on high-voltage lines.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Work on high-voltage lines. 75.705-1 Section 75... AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Grounding § 75.705-1 Work on high-voltage lines. (a) Section 75.705 specifically prohibits work on energized high-voltage lines underground; (b...

  16. 30 CFR 75.705-1 - Work on high-voltage lines.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Work on high-voltage lines. 75.705-1 Section 75... AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Grounding § 75.705-1 Work on high-voltage lines. (a) Section 75.705 specifically prohibits work on energized high-voltage lines underground; (b...

  17. 30 CFR 75.705-2 - Repairs to energized surface high-voltage lines.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Repairs to energized surface high-voltage lines. 75.705-2 Section 75.705-2 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... Repairs to energized surface high-voltage lines. An energized high-voltage surface line may be...

  18. 30 CFR 75.802 - Protection of high-voltage circuits extending underground.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of high-voltage circuits extending... LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except...

  19. 30 CFR 77.704-10 - Tying into energized high-voltage surface circuits.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Tying into energized high-voltage surface... AREAS OF UNDERGROUND COAL MINES Grounding § 77.704-10 Tying into energized high-voltage surface circuits. If the work of forming an additional circuit by tying into an energized high-voltage surface line...

  20. 30 CFR 75.807 - Installation of high-voltage transmission cables.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Installation of high-voltage transmission... LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.807 Installation of high-voltage transmission cables. All underground...

  1. 30 CFR 75.705-10 - Tying into energized high-voltage surface circuits.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Tying into energized high-voltage surface....705-10 Tying into energized high-voltage surface circuits. If the work of forming an additional circuit by tying into an energized high-voltage surface line is performed from the ground, any...

  2. 30 CFR 75.705-1 - Work on high-voltage lines.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Work on high-voltage lines. 75.705-1 Section 75... AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Grounding § 75.705-1 Work on high-voltage lines. (a) Section 75.705 specifically prohibits work on energized high-voltage lines underground;...

  3. 30 CFR 75.811 - High-voltage underground equipment; grounding.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage underground equipment; grounding... COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.811 High-voltage underground equipment; grounding. Frames, supporting structures...

  4. 30 CFR 18.53 - High-voltage longwall mining systems.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 1 2014-07-01 2014-07-01 false High-voltage longwall mining systems. 18.53..., EVALUATION, AND APPROVAL OF MINING PRODUCTS ELECTRIC MOTOR-DRIVEN MINE EQUIPMENT AND ACCESSORIES Construction and Design Requirements § 18.53 High-voltage longwall mining systems. (a) In each high-voltage...

  5. 30 CFR 18.53 - High-voltage longwall mining systems.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false High-voltage longwall mining systems. 18.53..., EVALUATION, AND APPROVAL OF MINING PRODUCTS ELECTRIC MOTOR-DRIVEN MINE EQUIPMENT AND ACCESSORIES Construction and Design Requirements § 18.53 High-voltage longwall mining systems. (a) In each high-voltage...

  6. 30 CFR 75.810 - High-voltage trailing cables; splices.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false High-voltage trailing cables; splices. 75.810... § 75.810 High-voltage trailing cables; splices. In the case of high-voltage cables used as trailing cables, temporary splices shall not be used and all permanent splices shall be made in accordance with...

  7. 30 CFR 75.810 - High-voltage trailing cables; splices.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 1 2014-07-01 2014-07-01 false High-voltage trailing cables; splices. 75.810... § 75.810 High-voltage trailing cables; splices. In the case of high-voltage cables used as trailing cables, temporary splices shall not be used and all permanent splices shall be made in accordance with...

  8. 30 CFR 75.810 - High-voltage trailing cables; splices.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false High-voltage trailing cables; splices. 75.810... § 75.810 High-voltage trailing cables; splices. In the case of high-voltage cables used as trailing cables, temporary splices shall not be used and all permanent splices shall be made in accordance with...

  9. 30 CFR 75.810 - High-voltage trailing cables; splices.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false High-voltage trailing cables; splices. 75.810... § 75.810 High-voltage trailing cables; splices. In the case of high-voltage cables used as trailing cables, temporary splices shall not be used and all permanent splices shall be made in accordance with...

  10. 30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. No electrical work shall be performed on low-, medium-, or high-voltage distribution circuits or...

  11. 30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. No electrical work shall be performed on low-, medium-, or high-voltage distribution circuits or...

  12. 30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. No electrical work shall be performed on low-, medium-, or high-voltage distribution circuits or...

  13. 30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. No electrical work shall be performed on low-, medium-, or high-voltage distribution circuits or...

  14. 30 CFR 75.800 - High-voltage circuits; circuit breakers.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 75.800... § 75.800 High-voltage circuits; circuit breakers. High-voltage circuits entering the underground area of any coal mine shall be protected by suitable circuit breakers of adequate interrupting...

  15. 30 CFR 75.812-2 - High-voltage power centers and transformers; record of examination.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage power centers and transformers; record of examination. 75.812-2 Section 75.812-2 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.812-2 High-voltage power centers and transformers; record of examination...

  16. 30 CFR 75.812-2 - High-voltage power centers and transformers; record of examination.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false High-voltage power centers and transformers; record of examination. 75.812-2 Section 75.812-2 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.812-2 High-voltage power centers and transformers; record of examination...

  17. 30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. No electrical work shall be performed on low-, medium-, or high-voltage distribution circuits or...

  18. 30 CFR 18.53 - High-voltage longwall mining systems.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false High-voltage longwall mining systems. 18.53..., EVALUATION, AND APPROVAL OF MINING PRODUCTS ELECTRIC MOTOR-DRIVEN MINE EQUIPMENT AND ACCESSORIES Construction and Design Requirements § 18.53 High-voltage longwall mining systems. (a) In each high-voltage motor...

  19. 30 CFR 75.800 - High-voltage circuits; circuit breakers.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false High-voltage circuits; circuit breakers. 75.800... § 75.800 High-voltage circuits; circuit breakers. High-voltage circuits entering the underground area of any coal mine shall be protected by suitable circuit breakers of adequate interrupting capacity...

  20. 30 CFR 75.800 - High-voltage circuits; circuit breakers.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false High-voltage circuits; circuit breakers. 75.800... § 75.800 High-voltage circuits; circuit breakers. High-voltage circuits entering the underground area of any coal mine shall be protected by suitable circuit breakers of adequate interrupting capacity...