CNFET-based voltage rectifier circuit for biomedical implantable applications

NASA Astrophysics Data System (ADS)

Tu, Yonggen; Qian, Libo; Xia, Yinshui

2017-02-01

Carbon nanotube field effect transistor (CNFET) shows lower threshold voltage and smaller leakage current in comparison to its CMOS counterpart. In this paper, two kinds of CNFET-based rectifiers, full-wave rectifiers and voltage doubler rectifiers are presented for biomedical implantable applications. Based on the standard 32 nm CNFET model, the electrical performance of CNFET rectifiers is analyzed and compared. Simulation results show the voltage conversion efficiency (VCE) and power conversion efficiency (PCE) achieve 70.82% and 72.49% for CNFET full-wave rectifiers and 56.60% and 61.17% for CNFET voltage double rectifiers at typical 1.0 V input voltage excitation, which are higher than that of CMOS design. Moreover, considering the controllable property of CNFET threshold voltage, the effect of various design parameters on the electrical performance is investigated. It is observed that the VCE and PCE of CNFET rectifier increase with increasing CNT diameter and number of tubes. The proposed results would provide some guidelines for design and optimization of CNFET-based rectifier circuits. Project supported by the National Natural Science Foundation of China (Nos. 61131001, 61404077, 61571248), the Science and Technology Fund of Zhejiang Province (No. 2015C31090), the Natural Science Foundation of Ningbo (No. 2014A610147), State Key Laboratory of ASIC & System (No. 2015KF006) and the K. C. Wong Magna Fund in Ningbo University.

Junction barrier Schottky rectifier with an improved P-well region

NASA Astrophysics Data System (ADS)

Wang, Ying; Li, Ting; Cao, Fei; Shao, Lei; Chen, Yu-Xian

2012-12-01

A junction barrier Schottky (JBS) rectifier with an improved P-well on 4H—SiC is proposed to improve the VF—IR trade-off and the breakdown voltage. The reverse current density of the proposed JBS rectifier at 300 K and 800 V is about 3.3×10-8 times that of the common JBS rectifier at no expense of the forward voltage drop. This is because the depletion layer thickness in the P-well region at the same reverse voltage is larger than in the P+ grid, resulting in a lower spreading current and tunneling current. As a result, the breakdown voltage of the proposed JBS rectifier is over 1.6 kV, that is about 0.8 times more than that of the common JBS rectifier due to the uniform electric field. Although the series resistance of the proposed JBS rectifier is a little larger than that of the common JBS rectifier, the figure of merit (FOM) of the proposed JBS rectifier is about 2.9 times that of the common JBS rectifier. Based on simulating the values of susceptibility of the two JBS rectifiers to electrostatic discharge (ESD) in the human body model (HBM) circuits, the failure energy of the proposed JBS rectifier increases 17% compared with that of the common JBS rectifier.

Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization.

PubMed

Kabra, Vinay; Aamir, Lubna; Malik, M M

2014-01-01

A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si) diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on an n-Si substrate using a dip coating technique. The device was then characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The effect of UV illumination on the I-V characteristics was also explored and indicated the formation of a highly rectifying, nano heterojunction with a rectification ratio of 101 at 3 V, which increased nearly 2.5 times (232 at 3 V) under UV illumination. However, the cut-in voltage decreases from 1.5 V to 0.9 V under UV illumination. The fabricated device could be used in switches, rectifiers, clipper and clamper circuits, BJTs, MOSFETs and other electronic circuitry.

Development of high temperature gallium phosphide rectifiers

NASA Technical Reports Server (NTRS)

Craford, M. G.; Keune, D. L.

1972-01-01

Large area high performance, GaP rectifiers were fabricated by means of Zn diffusion into vapor phase epitaxial GaP. Devices with an active area of 0.01 sq cm typically exhibit forward voltages of 3 volts for a bias current of 1 ampere and have reverse breakdown voltages of 300 volts for temperatures from 27 C to 400 C. Typical device reverse saturation current at a reverse bias of 150 volts is less than 10 to the minus 9th power amp at 27 C and less than 0.000050 amp at 400 C.

A high voltage pulse generator based on silicon-controlled rectifier for field-reversed configuration experiment.

PubMed

Lin, Munan; Liu, Ming; Zhu, Guanghui; Wang, Yanpeng; Shi, Peiyun; Sun, Xuan

2017-08-01

A high voltage pulse generator based on a silicon-controlled rectifier has been designed and implemented for a field reversed configuration experiment. A critical damping circuit is used in the generator to produce the desired pulse waveform. Depending on the load, the rise time of the output trigger signal can be less than 1 μs, and the peak amplitudes of trigger voltage and current are up to 8 kV and 85 A in a single output. The output voltage can be easily adjusted by changing the voltage on a capacitor of the generator. In addition, the generator integrates an electrically floating heater circuit so it is capable of triggering either pseudosparks (TDI-type hydrogen thyratron) or ignitrons. Details of the circuits and their implementation are described in the paper. The trigger generator has successfully controlled the discharging sequence of the pulsed power supply for a field reversed configuration experiment.

A high voltage pulse generator based on silicon-controlled rectifier for field-reversed configuration experiment

NASA Astrophysics Data System (ADS)

Lin, Munan; Liu, Ming; Zhu, Guanghui; Wang, Yanpeng; Shi, Peiyun; Sun, Xuan

2017-08-01

A high voltage pulse generator based on a silicon-controlled rectifier has been designed and implemented for a field reversed configuration experiment. A critical damping circuit is used in the generator to produce the desired pulse waveform. Depending on the load, the rise time of the output trigger signal can be less than 1 μs, and the peak amplitudes of trigger voltage and current are up to 8 kV and 85 A in a single output. The output voltage can be easily adjusted by changing the voltage on a capacitor of the generator. In addition, the generator integrates an electrically floating heater circuit so it is capable of triggering either pseudosparks (TDI-type hydrogen thyratron) or ignitrons. Details of the circuits and their implementation are described in the paper. The trigger generator has successfully controlled the discharging sequence of the pulsed power supply for a field reversed configuration experiment.

An isolated bridgeless AC-DC PFC converter using a LC resonant voltage doubler rectifier

NASA Astrophysics Data System (ADS)

Lee, Sin-woo; Do, Hyun-Lark

2016-12-01

This paper proposed an isolated bridgeless AC-DC power factor correction (PFC) converter using a LC resonant voltage doubler rectifier. The proposed converter is based on isolated conventional single-ended primary inductance converter (SEPIC) PFC converter. The conduction loss of rectification is reduced than a conventional one because the proposed converter is designed to eliminate a full-bridge rectifier at an input stage. Moreover, for zero-current switching (ZCS) operation and low voltage stresses of output diodes, the secondary of the proposed converter is designed as voltage doubler with a LC resonant tank. Additionally, an input-output electrical isolation is provided for safety standard. In conclusion, high power factor is achieved and efficiency is improved. The operational principles, steady-state analysis and design equations of the proposed converter are described in detail. Experimental results from a 60 W prototype at a constant switching frequency 100 kHz are presented to verify the performance of the proposed converter.

Rectenna for high-voltage applications

NASA Technical Reports Server (NTRS)

Epp, Larry W. (Inventor); Khan, Abdur R. (Inventor)

2002-01-01

An energy transfer system is disclosed. The system includes patch elements, shielding layers, and energy rectifying circuits. The patch elements receive and couple radio frequency energy. The shielding layer includes at least one opening that allows radio frequency energy to pass through. The openings are formed and positioned to receive the radio frequency energy and to minimize any re-radiating back toward the source of energy. The energy rectifying circuit includes a circuit for rectifying the radio frequency energy into dc energy. A plurality of energy rectifying circuits is arranged in an array to provide a sum of dc energy generated by the energy rectifying circuit.

Pharmacological Conversion of a Cardiac Inward Rectifier into an Outward Rectifier Potassium Channel.

PubMed

Moreno-Galindo, Eloy G; Sanchez-Chapula, Jose A; Tristani-Firouzi, Martin; Navarro-Polanco, Ricardo A

2016-09-01

Potassium (K(+)) channels are crucial for determining the shape, duration, and frequency of action-potential firing in excitable cells. Broadly speaking, K(+) channels can be classified based on whether their macroscopic current outwardly or inwardly rectifies, whereby rectification refers to a change in conductance with voltage. Outwardly rectifying K(+) channels conduct greater current at depolarized membrane potentials, whereas inward rectifier channels conduct greater current at hyperpolarized membrane potentials. Under most circumstances, outward currents through inwardly rectifying K(+) channels are reduced at more depolarized potentials. However, the acetylcholine-gated K(+) channel (KACh) conducts current that inwardly rectifies when activated by some ligands (such as acetylcholine), and yet conducts current that outwardly rectifies when activated by other ligands (for example, pilocarpine and choline). The perplexing and paradoxical behavior of KACh channels is due to the intrinsic voltage sensitivity of the receptor that activates KACh channels, the M2 muscarinic receptor (M2R). Emerging evidence reveals that the affinity of M2R for distinct ligands varies in a voltage-dependent and ligand-specific manner. These intrinsic receptor properties determine whether current conducted by KACh channels inwardly or outwardly rectifies. This review summarizes the most recent concepts regarding the intrinsic voltage sensitivity of muscarinic receptors and the consequences of this intriguing behavior on cardiac physiology and pharmacology of KACh channels. Copyright © 2016 by The American Society for Pharmacology and Experimental Therapeutics.

High voltage pulse generator. [Patent application

DOEpatents

Fasching, G.E.

1975-06-12

An improved high-voltage pulse generator is described which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of the first rectifier connected between the first and second capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. The output voltage can be readily increased by adding additional charging networks. The circuit allows the peak level of the output to be easily varied over a wide range by using a variable autotransformer in the charging circuit.

Design, fabrication, and characterization of 4H-silicon carbide rectifiers for power switching applications

NASA Astrophysics Data System (ADS)

Sheridan, David Charles

Silicon Carbide has received a substantial increase in research interest over the past few years as a base material system for high-frequency and high-power semiconductor devices. Of the over 1200 polytypes, 4H-SiC is the most attractive polytype for power devices due to its wide band gap (3.2eV), excellent thermal conductivity (4.9 W/cm·K), and high critical field strength (˜2 x 106 V/cm). Important for power devices, the 10x increase in critical field strength of SiC allows high voltage blocking layers to be fabricated significantly thinner than for comparable Si devices. For power rectifiers, this reduces device on-resistance, while maintaining the same high voltage blocking capability. In this work, 4H-SiC Schottky, pn, and junction barrier Schottky (JBS) rectifiers for use in high voltage switching applications have been designed, fabricated, and extensively characterized. First, a detailed review of 4H-SiC material parameters was performed and SiC models were implemented into a standard Si drift-diffusion numerical simulator. Using these models, a SiC simulation methodology was developed in order to enable predictive SiC device design. A wide variety of rectifier and edge termination designs were investigated and optimized with respect to breakdown efficiency, area consumption, resistance to interface charge, and fabrication practicality. Simulated termination methods include: field plates, floating guard rings, and a variety of junction termination extensions (JTE). Using the device simulation results, both Schottky and JBS rectifiers were fabricated with a novel self-aligned edge termination design, and fabricated with process elements developed at the Alabama Microelectronics Science and Technology Center facility. These rectifiers exhibited near-ideal forward characteristics and had blocking voltages in excess of 2.5kV. The SiC diodes were subjected to inductive switching tests, and were found to have superior reverse recovery characteristics compared to a similar Si diode. Finally, the performance of these SiC rectifiers were tested in inductive switching circuits and in high dose gamma radiation environments. In both cases, these devices were shown to be superior to their silicon counterparts. The details of this work was presented and published in the proceedings of the 45th International Meeting of the American Vacuum Society [1], the 1999 International Conference on Silicon Carbide and Related Materials [2, 3] and the 2000 European Conference on Silicon Carbide and Related Materials [4]. The expanded conference papers were published in the international journal. Solid-State Electronics [5, 6].

Commutating Permanent-Magnet Motors At Low Speed

NASA Technical Reports Server (NTRS)

Dolland, C.

1985-01-01

Circuit provides forced commutation during starting. Forced commutation circuit diverts current from inverter SCR's and turns SCR's off during commutation intervals. Silicon controlled rectifier in circuit unnecessary when switch S10 replaced by high-current, high-voltage transistor. At present, high-current, low-voltage device must suffice.

Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode

NASA Astrophysics Data System (ADS)

Wang, Fangzhou; Chen, Wanjun; Wang, Zeheng; Sun, Ruize; Wei, Jin; Li, Xuan; Shi, Yijun; Jin, Xiaosheng; Xu, Xiaorui; Chen, Nan; Zhou, Qi; Zhang, Bo

2017-05-01

To achieve uniform low turn-on voltage and high reverse blocking capability, an AlGaN/GaN power field effect rectifier with trench heterojunction anode (THA-FER) is proposed and investigated in this work which includes only simulated data and no real experimental result. VT has a low saturation value when trench height (HT) is beyond 300 nm, confirming it is possible to control the VT accurately without precisely controlling the HT in the THA-FER. Meanwhile, high HT anode reduces reverse leakage current and yields high breakdown voltage (VB). A superior high Baliga's Figure of Merits (BFOM = VB2/Ron,sp, Ron,sp is specific-on resistance) of 1228 MW/cm2 reveals the THA-FER caters for the demands of high efficiency GaN power applications.

Ti-Doped GaOx Resistive Switching Memory with Self-Rectifying Behavior by Using NbOx/Pt Bilayers.

PubMed

Park, Ju Hyun; Jeon, Dong Su; Kim, Tae Geun

2017-12-13

Crossbar arrays (CBAs) with resistive random access memory (ReRAM) constitute an established architecture for high-density memory. However, sneak paths via unselected cells increase the total power consumption of these devices and limit the array size. To eliminate such sneak-path problems, we propose a Ti/GaO x /NbO x /Pt structure with a self-rectifying resistive-switching (RS) behavior. In this structure, to reduce the operating voltage, we used a Ti/GaO x stack to increase the number of trap sites in the RS GaO x layer through interfacial reactions between the Ti and GaO x layers. This increase enables easier carrier transport with reduced electric fields. We then adopted a NbO x /Pt stack to add rectifying behavior to the RS GaO x layer. This behavior is a result of the large Schottky barrier height between the NbO x and Pt layers. Finally, both the Ti/GaO x and NbO x /Pt stacks were combined to realize a self-rectifying ReRAM device, which exhibited excellent performance. Characteristics of the device include a low operating voltage range (-2.8 to 2.5 V), high on/off ratios (∼20), high selectivity (∼10 4 ), high operating speeds (200-500 ns), a very low forming voltage (∼3 V), stable operation, and excellent uniformity for high-density CBA-based ReRAM applications.

Fabrication and characterization of magnetically tunable metal-semiconductor schottky diode using barium hexaferrite thin film on gold

NASA Astrophysics Data System (ADS)

Kaur, Jotinder; Sharma, Vinay; Sharma, Vipul; Veerakumar, V.; Kuanr, Bijoy K.

2016-05-01

Barium Hexaferrite (BaM) is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm)/silicon substrate was used to grow the BaM thin films (100-150 nm) using pulsed laser deposition. I-V characteristics were measured on the Au/BaM structure sweeping the voltage from ±5 volts. The forward and reverse bias current-voltage curves show diode like rectifying characteristics. The threshold voltage decreases while the output current increases with increase in the applied external magnetic field showing that the I-V characteristics of the BaM based Schottky junction diodes can be tuned by external magnetic field. It is also demonstrated that, the fabricated Schottky diode can be used as a half-wave rectifier, which could operate at high frequencies in the range of 1 MHz compared to the regular p-n junction diodes, which rectify below 10 kHz. In addition, it is found that above 1 MHz, Au/BaM diode can work as a rectifier as well as a capacitor filter, making the average (dc) voltage much larger.

Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit

NASA Astrophysics Data System (ADS)

Yang, Jiancheng; Ren, F.; Tadjer, Marko; Pearton, S. J.; Kuramata, A.

2018-05-01

A key goal for Ga2O3 rectifiers is to achieve high forward currents and high reverse breakdown voltages. Field-plated β-Ga2O3 Schottky rectifiers with area 0.01 cm2, fabricated on 10 μm thick, lightly-doped drift regions (1.33 x 1016 cm-3) on heavily-doped (3.6 x 1018 cm-3) substrates, exhibited forward current density of 100A.cm-2 at 2.1 V, with absolute current of 1 A at this voltage and a reverse breakdown voltage (VB) of 650V. The on-resistance (RON) was 1.58 x 10-2 Ω.cm2, producing a figure of merit (VB2/RON) of 26.5 MW.cm-2. The Schottky barrier height of the Ni was 1.04 eV, with an ideality factor of 1.02. The on/off ratio was in the range 3.3 x 106 - 5.7 x 109 for reverse biases between 5 and 100V. The reverse recovery time was ˜30 ns for switching from +2V to -5V. The results show the capability of β-Ga2O3 rectifiers to achieve exceptional performance in both forward and reverse bias conditions.

Driver circuit for solid state light sources

DOEpatents

Palmer, Fred; Denvir, Kerry; Allen, Steven

2016-02-16

A driver circuit for a light source including one or more solid state light sources, a luminaire including the same, and a method of so driving the solid state light sources are provided. The driver circuit includes a rectifier circuit that receives an alternating current (AC) input voltage and provides a rectified AC voltage. The driver circuit also includes a switching converter circuit coupled to the light source. The switching converter circuit provides a direct current (DC) output to the light source in response to the rectified AC voltage. The driver circuit also includes a mixing circuit, coupled to the light source, to switch current through at least one solid state light source of the light source in response to each of a plurality of consecutive half-waves of the rectified AC voltage.

Ferroresonant flux coupled battery charger

NASA Technical Reports Server (NTRS)

McLyman, Colonel W. T. (Inventor)

1987-01-01

A battery charger for incorporation into an electric-powered vehicle is disclosed. The charger includes a ferroresonant voltage-regulating circuit for providing an output voltage proportional to the frequency of an input AC voltage. A high frequency converter converts a DC voltage supplied, for example, from a rectifier connected to a standard AC outlet, to a controlled frequency AC voltage which is supplied to the input of the ferroresonant circuit. The ferroresonant circuit includes an output, a saturable core transformer connected across the output, and a first linear inductor and a capacitor connected in series across the saturable core transformer and tuned to resonate at the third harmonic of the AC voltage from the high frequency converter. The ferroresonant circuit further includes a second linear inductor connected between the input of the ferroresonant circuit and the saturable core transformer. The output voltage from the ferroresonant circuit is rectified and applied across a pair of output terminals adapted to be connected to the battery to be charged. A feedback circuit compares the voltage across the output terminals with a reference voltage and controls the frequency of the AC voltage produced by the high frequency converter to maintain the voltage across the output terminals at a predetermined value. The second linear inductor provides a highly reactive load in the event of a fault across the output terminals to render the charger short-circuit proof.

Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents

PubMed Central

Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

2017-01-01

Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power POUT of 564 μW and a rectifier output voltage VRECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a POUT of 288 μW and a VRECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier. PMID:28422085

Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents.

PubMed

Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

2017-04-19

Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power P OUT of 564 μW and a rectifier output voltage V RECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a P OUT of 288 μW and a V RECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier.

An Improved Power Quality BIBRED Converter-Based VSI-Fed BLDC Motor Drive

NASA Astrophysics Data System (ADS)

Singh, Bhim; Bist, Vashist

2014-01-01

This paper presents an IHQRR (integrated high-quality rectifier regulator) BIBRED (boost integrated buck rectifier energy storage DC-DC) converter-based VSI (voltage source inverter)-fed BLDC (brushless DC) motor drive. The speed control of BLDC motor is achieved by controlling the DC link voltage of the VSI using a single voltage sensor. This allows VSI to operate in fundamental frequency switching mode for electronic commutation of BLDC motor which reduces the switching losses due to high-frequency switching used in conventional approach of PWM (pulse width modulation)-based VSI-fed BLDC motor drive. A BIBRED converter is operated in a dual-DCM (discontinuous conduction mode) thus using a voltage follower approach for PFC (power factor correction) and DC link voltage control. The performance of the proposed drive is evaluated for improved power quality over a wide range of speed control and supply voltage variation for demonstrating the behavior of proposed drive. The power quality indices thus obtained are within the recommended limits by international PQ (power quality) standards such as IEC 61000-3-2.

p -n Junction Rectifying Characteristics of Purely n -Type GaN-Based Structures

NASA Astrophysics Data System (ADS)

Zuo, P.; Jiang, Y.; Ma, Z. G.; Wang, L.; Zhao, B.; Li, Y. F.; Yue, G.; Wu, H. Y.; Yan, H. J.; Jia, H. Q.; Wang, W. X.; Zhou, J. M.; Sun, Q.; Liu, W. M.; Ji, An-Chun; Chen, H.

2017-08-01

The GaN-based p -n junction rectifications are important in the development of high-power electronics. Here, we demonstrate that p -n junction rectifying characteristics can be realized with pure n -type structures by inserting an (In,Ga)N quantum well into the GaN /(Al ,Ga )N /GaN double heterostructures. Unlike the usual barriers, the insertion of an (In,Ga)N quantum well, which has an opposite polarization field to that of the (Al,Ga)N barrier, tailors significantly the energy bands of the system. The lifted energy level of the GaN spacer and the formation of the (In ,Ga )N /GaN interface barrier can improve the reverse threshold voltage and reduce the forward threshold voltage simultaneously, forming the p -n junction rectifying characteristics.

Silicon Controlled Switch for Detection of Ionizing Radiation

DTIC Science & Technology

2015-12-01

sensitivity of previous NPS silicon controlled rectifier (SCR) based circuits. Additionally, the circuit in this thesis was able to detect AM-241 and...sensitivity of previous NPS silicon controlled rectifier (SCR) based circuits. Additionally, the circuit in this thesis was able to detect AM-241 and...Controlled Rectifier SCS Silicon-Controlled Switch SONAR SOund Navigation and Ranging VBIAS Applied Bias Voltage VH Holding Voltage VS Standalone SCS

Dual-bridge LLC-SRC with extended voltage range for deeply depleted PEV battery charging

NASA Astrophysics Data System (ADS)

Shahzad, M. Imran; Iqbal, Shahid; Taib, Soib

2017-11-01

This paper proposes a dual-bridge LLC series resonant converter with hybrid-rectifier for achieving extended charging voltage range of 50-420 V for on-board battery charger of plug-in electric vehicle for normal and deeply depleted battery charging. Depending upon the configuration of primary switching network and secondary rectifier, the proposed topology has three operating modes as half-bridge with bridge rectifier (HBBR), full-bridge with bridge rectifier (FBBR) and full-bridge with voltage doubler (FBVD). HBBR, FBBR and FBVD operating modes of converter achieve 50-125, 125-250 and 250-420 V voltage ranges, respectively. For voltage above 62 V, the converter operates below resonance frequency zero voltage switching region with narrow switching frequency range for soft commutation of secondary diodes and low turn-off current of MOSFETs to reduce switching losses. The proposed converter is simulated using MATLAB Simulink and a 1.5 kW laboratory prototype is also built to validate the operation of proposed topology. Simulation and experimental results show that the converter meets all the charging requirements for deeply depleted to fully charged battery using constant current-constant voltage charging method with fixed 400 V DC input and achieves 96.22% peak efficiency.

Noise Properties of Rectifying Nanopore

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vlassiouk, Ivan V

2011-01-01

Ion currents through three types of rectifying nanoporous structures are studied and compared: conically shaped polymer nanopores, glass nanopipettes, and silicon nitride nanopores. Time signals of ion currents are analyzed by the power spectrum. We focus on the low-frequency range where the power spectrum magnitude scales with frequency, f, as 1/f. Glass nanopipettes and polymer nanopores exhibit nonequilibrium 1/f noise; thus, the normalized power spectrum depends on the voltage polarity and magnitude. In contrast, 1/f noise in rectifying silicon nitride nanopores is of equilibrium character. Various mechanisms underlying the voltage-dependent 1/f noise are explored and discussed, including intrinsic pore wallmore » dynamics and formation of vortices and nonlinear flow patterns in the pore. Experimental data are supported by modeling of ion currents based on the coupled Poisson-Nernst-Planck and Navier-Stokes equations. We conclude that the voltage-dependent 1/f noise observed in polymer and glass asymmetric nanopores might result from high and asymmetric electric fields, inducing secondary effects in the pore, such as enhanced water dissociation.« less

UHF front-end feeding RFID-based body sensor networks by exploiting the reader signal

NASA Astrophysics Data System (ADS)

Pasca, M.; Colella, R.; Catarinucci, L.; Tarricone, L.; D'Amico, S.; Baschirotto, A.

2016-05-01

This paper presents an integrated, high-sensitivity UHF radio frequency identification (RFID) power management circuit for body sensor network applications. The circuit consists of a two-stage RF-DC Dickson's rectifier followed by an integrated five-stage DC-DC Pelliconi's charge pump driven by an ultralow start-up voltage LC oscillator. The DC-DC charge pump interposed between the RF-DC rectifier and the output load provides the RF to load isolation avoiding losses due to the diodes reverse saturation current. The RF-DC rectifier has been realized on FR4 substrate, while the charge pump and the oscillator have been realized in 180 nm complementary metal oxide semiconductor (CMOS) technology. Outdoor measurements demonstrate the ability of the power management circuit to provide 400 mV output voltage at 14 m distance from the UHF reader, in correspondence of -25 dBm input signal power. As demonstrated in the literature, such output voltage level is suitable to supply body sensor network nodes.

Arc lamp power supply using a voltage multiplier

NASA Technical Reports Server (NTRS)

Leighty, Bradley D.

1988-01-01

A power supply is provided for an arc discharge lamp which includes a relatively low voltage high current power supply section and a high voltage starter circuit. The low voltage section includes a transformer, rectifier, variable resistor and a bank of capacitors, while the starter circuit comprises several diodes and capacitors connected as a Cockcroft-Walton multiplier. The starting circuit is effectively bypassed when the lamp arc is established and serves to automatically provide a high starting voltage to re-strike the lamp arc if the arc is extinguished by a power interruption.

Interleaved power converter

DOEpatents

Zhu, Lizhi

2007-11-13

A power converter architecture interleaves full bridge converters to alleviate thermal management problems in high current applications, and may, for example, double the output power capability while reducing parts count and costs. For example, one phase of a three phase inverter is shared between two transformers, which provide power to a rectifier such as a current doubler rectifier to provide two full bridge DC/DC converters with three rather than four high voltage inverter legs.

High voltage pulse generator

DOEpatents

Fasching, George E.

1977-03-08

An improved high-voltage pulse generator has been provided which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of a first one of the rectifiers connected between the first and second of the plurality of charging capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. Alternate circuits are provided for controlling the application of the charging voltage from a charging circuit to be applied to the parallel capacitors which provides a selection of at least two different intervals in which the charging voltage is turned "off" to allow the SCR's connecting the capacitors in series to turn "off" before recharging begins. The high-voltage pulse-generating circuit including the N capacitors and corresponding SCR's which connect the capacitors in series when triggered "on" further includes diodes and series-connected inductors between the parallel-connected charging capacitors which allow sufficiently fast charging of the capacitors for a high pulse repetition rate and yet allow considerable control of the decay time of the high-voltage pulses from the pulse-generating circuit.

An Integrated Power-Efficient Active Rectifier With Offset-Controlled High Speed Comparators for Inductively Powered Applications

PubMed Central

Lee, Hyung-Min; Ghovanloo, Maysam

2011-01-01

We present an active full-wave rectifier with offset-controlled high speed comparators in standard CMOS that provides high power conversion efficiency (PCE) in high frequency (HF) range for inductively powered devices. This rectifier provides much lower dropout voltage and far better PCE compared to the passive on-chip or off-chip rectifiers. The built-in offset-control functions in the comparators compensate for both turn-on and turn-off delays in the main rectifying switches, thus maximizing the forward current delivered to the load and minimizing the back current to improve the PCE. We have fabricated this active rectifier in a 0.5-μm 3M2P standard CMOS process, occupying 0.18 mm2 of chip area. With 3.8 V peak ac input at 13.56 MHz, the rectifier provides 3.12 V dc output to a 500 Ω load, resulting in the PCE of 80.2%, which is the highest measured at this frequency. In addition, overvoltage protection (OVP) as safety measure and built-in back telemetry capabilities have been incorporated in our design using detuning and load shift keying (LSK) techniques, respectively, and tested. PMID:22174666

An RF Energy Harvester System Using UHF Micropower CMOS Rectifier Based on a Diode Connected CMOS Transistor

PubMed Central

Shokrani, Mohammad Reza; Hamidon, Mohd Nizar B.; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

2014-01-01

This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18 μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology. PMID:24782680

An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

PubMed

Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

2014-01-01

This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Levinshtein, M. E., E-mail: melev@nimis.ioffe.ru; Ivanov, P. A.; Zhang, Q. J.

The forward-pulse isothermal current–voltage characteristics of 4H-SiC junction barrier Schottky rectifiers (JBSs) with a nominal blocking voltage of 1700 V are measured in the temperature range from–80 to +90°C (193–363 K) up to current densities j of ~5600 A/cm{sup 2} at–80°C and 3000 A/cm{sup 2} at +90°C. In these measurements, the overheating of the structures relative to the ambient temperature, ΔT, did not exceed several degrees. At higher current densities, the effective injection of minority carriers (holes) into the base of the structures is observed, which is accompanied by the appearance of an S-type differential resistance. The pulsed isothermal current–voltagemore » characteristics are also measured at a temperature of 77 K.« less

HIGH VOLTAGE GENERATOR

DOEpatents

Zito, G.V.

1959-04-21

This patent relates to high voltage supply circuits adapted for providing operating voltages for GeigerMueller counter tubes, and is especially directed to an arrangement for maintaining uniform voltage under changing conditions of operation. In the usual power supply arrangement for counter tubes the counter voltage is taken from across the power supply output capacitor. If the count rate exceeds the current delivering capaciiy of the capacitor, the capacitor voltage will drop, decreasing the counter voltage. The present invention provides a multivibrator which has its output voltage controlled by a signal proportional to the counting rate. As the counting rate increases beyond the current delivering capacity of the capacitor, the rectified voltage output from the multivibrator is increased to maintain uniform counter voltage.

Noise Properties of Rectifying Nanopores

DOE Office of Scientific and Technical Information (OSTI.GOV)

Powell, M R; Sa, N; Davenport, M

2011-02-18

Ion currents through three types of rectifying nanoporous structures are studied and compared for the first time: conically shaped polymer nanopores, glass nanopipettes, and silicon nitride nanopores. Time signals of ion currents are analyzed by power spectrum. We focus on the low-frequency range where the power spectrum magnitude scales with frequency, f, as 1/f. Glass nanopipettes and polymer nanopores exhibit non-equilibrium 1/f noise, thus the normalized power spectrum depends on the voltage polarity and magnitude. In contrast, 1/f noise in rectifying silicon nitride nanopores is of equilibrium character. Various mechanisms underlying the voltage-dependent 1/f noise are explored and discussed, includingmore » intrinsic pore wall dynamics, and formation of vortices and non-linear flow patterns in the pore. Experimental data are supported by modeling of ion currents based on the coupled Poisson-Nernst-Planck and Navier Stokes equations. We conclude that the voltage-dependent 1/f noise observed in polymer and glass asymmetric nanopores might result from high and asymmetric electric fields inducing secondary effects in the pore such as enhanced water dissociation.« less

Ripple feedback for the resonant-filter unity-power-factor rectifier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Streng, S.A.; King, R.J.

1992-07-01

An unusual bucklike unity-power-factor rectifier with a resonant load-balancing network permits current-limited operation down to zero output voltage in a single-stage-topology. However, this rectifier has been found to be sensitive to ac-line voltage distortion and is potentially unstable with realistic values of ac-line impedance. In this paper, a new ripple feedback is proposed that solves both problems. A large-signal time-varying analysis is given along with incremental, quasi-static, and low-frequency approximations. Experimental verification is provided by a 500-W 50-kHz rectifier operating from the 120-V 60-Hz distribution system.

Low leakage current Ni/CdZnTe/In diodes for X/ γ-ray detectors

NASA Astrophysics Data System (ADS)

Sklyarchuk, V. M.; Gnatyuk, V. A.; Pecharapa, W.

2018-01-01

The electrical characteristics of the Ni/Cd1-xZnxTe/In structures with a metal-semiconductor rectifying contact are investigated. The diodes, fabricated on the base of In-doped n-type Cd1-xZnxTe (CZT) crystals with resistivity of ∼1010 Ω ṡ cm, have low leakage current and can be used as X/ γ-ray detectors. The rectifying contact was obtained by vacuum deposition of Ni on the semiconductor surface pretreated with argon plasma. The high barrier rectifying contact allowed us to increase applied reverse bias voltage up to 2500 V at the CZT crystal thickness of 1 mm. Dark (leakage) currents of the diodes with the rectifying contact area of 4 mm2 did not exceed 3-5 nA at bias voltage of 2000 V and room temperature. The charge transport mechanisms in the Ni/CZT/In structures have been interpreted as generation-recombination in the space charge region within the range of reverse bias of 5-100 V and as currents limited by space charge at both forward and reverse bias at V >100 V.

A new concept of a vacuum insulation tandem accelerator.

PubMed

Sorokin, I; Taskaev, S

2015-12-01

A tandem accelerator with vacuum insulation has been proposed and developed in the Budker Institute of Nuclear Physics. Negative hydrogen ions are accelerated by the positive 1 MV potential of the high voltage electrode, converted into protons in the gas stripping target inside the electrode, and then the protons are accelerated again by the same potential. The potential for high voltage and intermediate electrodes is supplied by the sectioned rectifier through a sectioned bushing insulator with a resistive divider. In this work, we propose a radical improvement of the accelerator concept. It is proposed to abandon the separate placement of the accelerator and the power supply and connect them through the bushing insulator. The source of high voltage is proposed to be located inside the accelerator insulator with high voltage and intermediate electrodes mounted on it. This will reduce the facility height from 7 m to 3m and make it really compact and attractive for placing in a clinic. This will significantly increase the stability of the accelerator because the potential for intermediate electrodes can be fed directly from the relevant sections of the rectifier. Copyright © 2015 Elsevier Ltd. All rights reserved.

Study of a High Voltage Ion Engine Power Supply

NASA Technical Reports Server (NTRS)

Stuart, Thomas A.; King, Roger J.; Mayer, Eric

1996-01-01

A complete laboratory breadboard version of a ion engine power converter was built and tested. This prototype operated on a line voltage of 80-120 Vdc, and provided output ratings of 1100 V at 1.8 kW, and 250 V at 20 mA. The high-voltage (HV) output voltage rating was revised from the original value of 1350 V at the beginning of the project. The LV output was designed to hold up during a 1-A surge current lasting up to 1 second. The prototype power converter included a internal housekeeping power supply which also operated from the line input. The power consumed in housekeeping was included in the overall energy budget presented for the ion engine converter. HV and LV output voltage setpoints were commanded through potentiometers. The HV converter itself reached its highest power efficiency of slightly over 93% at low line and maximum output. This would dip below 90% at high line. The no-load (rated output voltages, zero load current) power consumption of the entire system was less than 13 W. A careful loss breakdown shows that converter losses are predominately Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) conduction losses and HV rectifier snubbing losses, with the rectifier snubbing losses becoming predominant at high line. This suggests that further improvements in power efficiency could best be obtained by either developing a rectifier that was adequately protected against voltage overshoot with less snubbing, or by developing a pre-regulator to reduced the range of line voltage on the converter. The transient testing showed the converter to be fully protected against load faults, including a direct short-circuit from the HV output to the LV output terminals. Two currents sensors were used: one to directly detect any core ratcheting on the output transformer and re-initiate a soft start, and the other to directly detect a load fault and quickly shut down the converter for load protection. The finished converter has been extensively fault tested without failure. The finished converter has been packaged suitable for use as a laboratory prototype for further testing. The finished converter is readily transportable. An article on design issues for high voltage converters for ion engines is included as an attachement.

CMOS single-stage input-powered bridge rectifier with boost switch and duty cycle control

NASA Astrophysics Data System (ADS)

Radzuan, Roskhatijah; Mohd Salleh, Mohd Khairul; Hamzah, Mustafar Kamal; Ab Wahab, Norfishah

2017-06-01

This paper presents a single-stage input-powered bridge rectifier with boost switch for wireless-powered devices such as biomedical implants and wireless sensor nodes. Realised using CMOS process technology, it employs a duty cycle switch control to achieve high output voltage using boost technique, leading to a high output power conversion. It has only six external connections with the boost inductance. The input frequency of the bridge rectifier is set at 50 Hz, while the switching frequency is 100 kHz. The proposed circuit is fabricated on a single 0.18-micron CMOS die with a space area of 0.024 mm2. The simulated and measured results show good agreement.

Principle and design of small-sized and high-definition x-ray machine

NASA Astrophysics Data System (ADS)

Zhao, Anqing

2010-10-01

The paper discusses the circuit design and working principles of VMOS PWM type 75KV10mA high frequency X-ray machine. The system mainly consists of silicon controlled rectifier, VMOS tube PWM type high-frequency and highvoltage inverter circuit, filament inverter circuit, high-voltage rectifier filter circuit and as X-ray tube. The working process can be carried out under the control of a single-chip microcomputer. Due to the small size and high resolution in imaging, the X-ray machine is mostly adopted for emergent medical diagnosis and specific circumstances where nondestructive tests are conducted.

InGaAs-based planar barrier diode as microwave rectifier

NASA Astrophysics Data System (ADS)

Farhani Zakaria, Nor; Rizal Kasjoo, Shahrir; Zailan, Zarimawaty; Mohamad Isa, Muammar; Arshad, Mohd Khairuddin Md; Taking, Sanna

2018-06-01

In this report, we proposed and simulated a new planar nonlinear rectifying device fabricated using InGaAs substrate and referred to as a planar barrier diode (PBD). Using an asymmetrical inverse-arrowhead-shaped structure between the electrodes, a nonuniform depletion region is developed, which creates a triangular energy barrier in the conducting channel. This barrier is voltage dependent and can be controlled by the applied voltage across the PBD, thus resulting in nonlinear diode-like current–voltage characteristics; thus it can be used as a rectifying device. The PBD’s working principle is explained using thermionic emission theory. Furthermore, by varying the PBD’s geometric design, the asymmetry of the current–voltage characteristics can be optimized to realize superior rectification performance. By employing the optimized structural parameters, the obtained cut-off frequency of the device was approximately 270 GHz with a curvature coefficient peak of 14 V‑1 at a low DC bias voltage of 50 mV.

Method for exciting inductive-resistive loads with high and controllable direct current

DOEpatents

Hill, Jr., Homer M.

1976-01-01

Apparatus and method for transmitting dc power to a load circuit by applying a dc voltage from a standard waveform synthesizer to duration modulate a bipolar rectangular wave generator. As the amplitude of the dc voltage increases, the widths of the rectangular wave generator output pulses increase, and as the amplitude of the dc voltage decreases, the widths of the rectangular wave generator output pulses decrease. Thus, the waveform synthesizer selectively changes the durations of the rectangular wave generator bipolar output pulses so as to produce a rectangular wave ac carrier that is duration modulated in accordance with and in direct proportion to the voltage amplitude from the synthesizer. Thereupon, by transferring the carrier to the load circuit through an amplifier and a rectifier, the load current also corresponds directly to the voltage amplitude from the synthesizer. To this end, the rectified wave at less than 100% duty factor, amounts to a doubled frequency direct voltage pulse train for applying a direct current to the load, while the current ripple is minimized by a high L/R in the load circuit. In one embodiment, a power transmitting power amplifier means having a dc power supply is matched to the load circuit through a transformer for current magnification without sacrificing load current duration capability, while negative voltage and current feedback are provided in order to insure good output fidelity.

Functional conversion between A-type and delayed rectifier K+ channels by membrane lipids.

PubMed

Oliver, Dominik; Lien, Cheng-Chang; Soom, Malle; Baukrowitz, Thomas; Jonas, Peter; Fakler, Bernd

2004-04-09

Voltage-gated potassium (Kv) channels control action potential repolarization, interspike membrane potential, and action potential frequency in excitable cells. It is thought that the combinatorial association between distinct alpha and beta subunits determines whether Kv channels function as non-inactivating delayed rectifiers or as rapidly inactivating A-type channels. We show that membrane lipids can convert A-type channels into delayed rectifiers and vice versa. Phosphoinositides remove N-type inactivation from A-type channels by immobilizing the inactivation domains. Conversely, arachidonic acid and its amide anandamide endow delayed rectifiers with rapid voltage-dependent inactivation. The bidirectional control of Kv channel gating by lipids may provide a mechanism for the dynamic regulation of electrical signaling in the nervous system.

Modelling a single phase voltage controlled rectifier using Laplace transforms

NASA Technical Reports Server (NTRS)

Kraft, L. Alan; Kankam, M. David

1992-01-01

The development of a 20 kHz, AC power system by NASA for large space projects has spurred a need to develop models for the equipment which will be used on these single phase systems. To date, models for the AC source (i.e., inverters) have been developed. It is the intent of this paper to develop a method to model the single phase voltage controlled rectifiers which will be attached to the AC power grid as an interface for connected loads. A modified version of EPRI's HARMFLO program is used as the shell for these models. The results obtained from the model developed in this paper are quite adequate for the analysis of problems such as voltage resonance. The unique technique presented in this paper uses the Laplace transforms to determine the harmonic content of the load current of the rectifier rather than a curve fitting technique. Laplace transforms yield the coefficient of the differential equations which model the line current to the rectifier directly.

Multiple high voltage output DC-to-DC power converter

NASA Technical Reports Server (NTRS)

Cronin, Donald L. (Inventor); Farber, Bertrand F. (Inventor); Gehm, Hartmut K. (Inventor); Goldin, Daniel S. (Inventor)

1977-01-01

Disclosed is a multiple output DC-to-DC converter. The DC input power is filtered and passed through a chopper preregulator. The chopper output is then passed through a current source inverter controlled by a squarewave generator. The resultant AC is passed through the primary winding of a transformer, with high voltages induced in a plurality of secondary windings. The high voltage secondary outputs are each solid-state rectified for passage to individual output loads. Multiple feedback loops control the operation of the chopper preregulator, one being responsive to the current through the primary winding and another responsive to the DC voltage level at a selected output.

E-beam high voltage switching power supply

DOEpatents

Shimer, D.W.; Lange, A.C.

1996-10-15

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 figs.

E-beam high voltage switching power supply

DOEpatents

Shimer, Daniel W.; Lange, Arnold C.

1996-01-01

A high-power power supply produces a controllable, constant high voltage put under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

DOEpatents

Rehak, P.; Gatti, E.

1984-02-24

A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying functions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

DOEpatents

Rehak, Pavel; Gatti, Emilio

1987-01-01

A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

DOEpatents

Rehak, P.; Gatti, E.

1987-08-18

A semiconductor charge transport device and method for making same are disclosed, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution. 16 figs.

Outward Rectification of Voltage-Gated K+ Channels Evolved at Least Twice in Life History

PubMed Central

Riedelsberger, Janin; Dreyer, Ingo; Gonzalez, Wendy

2015-01-01

Voltage-gated potassium (K+) channels are present in all living systems. Despite high structural similarities in the transmembrane domains (TMD), this K+ channel type segregates into at least two main functional categories—hyperpolarization-activated, inward-rectifying (Kin) and depolarization-activated, outward-rectifying (Kout) channels. Voltage-gated K+ channels sense the membrane voltage via a voltage-sensing domain that is connected to the conduction pathway of the channel. It has been shown that the voltage-sensing mechanism is the same in Kin and Kout channels, but its performance results in opposite pore conformations. It is not known how the different coupling of voltage-sensor and pore is implemented. Here, we studied sequence and structural data of voltage-gated K+ channels from animals and plants with emphasis on the property of opposite rectification. We identified structural hotspots that alone allow already the distinction between Kin and Kout channels. Among them is a loop between TMD S5 and the pore that is very short in animal Kout, longer in plant and animal Kin and the longest in plant Kout channels. In combination with further structural and phylogenetic analyses this finding suggests that outward-rectification evolved twice and independently in the animal and plant kingdom. PMID:26356684

Outward Rectification of Voltage-Gated K+ Channels Evolved at Least Twice in Life History.

PubMed

Riedelsberger, Janin; Dreyer, Ingo; Gonzalez, Wendy

2015-01-01

Voltage-gated potassium (K+) channels are present in all living systems. Despite high structural similarities in the transmembrane domains (TMD), this K+ channel type segregates into at least two main functional categories-hyperpolarization-activated, inward-rectifying (Kin) and depolarization-activated, outward-rectifying (Kout) channels. Voltage-gated K+ channels sense the membrane voltage via a voltage-sensing domain that is connected to the conduction pathway of the channel. It has been shown that the voltage-sensing mechanism is the same in Kin and Kout channels, but its performance results in opposite pore conformations. It is not known how the different coupling of voltage-sensor and pore is implemented. Here, we studied sequence and structural data of voltage-gated K+ channels from animals and plants with emphasis on the property of opposite rectification. We identified structural hotspots that alone allow already the distinction between Kin and Kout channels. Among them is a loop between TMD S5 and the pore that is very short in animal Kout, longer in plant and animal Kin and the longest in plant Kout channels. In combination with further structural and phylogenetic analyses this finding suggests that outward-rectification evolved twice and independently in the animal and plant kingdom.

Optimal Design of a Resonance-Based Voltage Boosting Rectifier for Wireless Power Transmission.

PubMed

Lim, Jaemyung; Lee, Byunghun; Ghovanloo, Maysam

2018-02-01

This paper presents the design procedure for a new multi-cycle resonance-based voltage boosting rectifier (MCRR) capable of delivering a desired amount of power to the load (PDL) at a designated high voltage (HV) through a loosely-coupled inductive link. This is achieved by shorting the receiver (Rx) LC-tank for several cycles to harvest and accumulate the wireless energy in the RX inductor before boosting the voltage by breaking the loop and transferring the energy to the load in a quarter cycle. By optimizing the geometries of the transmitter (Tx) and Rx coils and the number of cycles, N , for energy harvesting, through an iterative design procedure, the MCRR can achieve the highest PDL under a given set of design constraints. Governing equations in the MCRR operation are derived to identify key specifications and the design guidelines. Using an exemplary set of specs, the optimized MCRR was able to generate 20.9 V DC across a 100 kΩ load from a 1.8 V p , 6.78 MHz sinusoid input in the ISM-band at a Tx/Rx coil separation of 1.3 cm, power transfer efficiency (PTE) of 2.2%, and N = 9 cycles. At the same coil distance and loading, coils optimized for a conventional half-wave rectifier (CHWR) were able to reach only 13.6 V DC from the same source.

Electrophysiological characterization of 14-benzoyltalatisamine, a selective blocker of the delayed rectifier K+ channel found in virtual screening.

PubMed

Song, Ming-Ke; Liu, Hong; Jiang, Hua-Liang; Yue, Jian-Min; Hu, Guo-Yuan

2006-02-15

14-Benzoyltalatisamine is a potent and selective blocker of the delayed rectifier K+ channel found in a computational virtual screening study. The compound was found to block the K+ channel from the extracellular side. However, it is unclear whether 14-benzoyltalatisamine shares the same block mechanism with tetraethylammonium (TEA). In order to elucidate how the hit compound found by the virtual screening interacts with the outer vestibule of the K+ channel, the effects of 14-benzoyltalatisamine and TEA on the delayed rectifier K+ current of rat dissociated hippocampal neurons were compared using whole-cell voltage-clamp recording. External application of 14-benzoyltalatisamine and TEA reversibly inhibited the current with IC50 values of 10.1+/-2.2 microM and 1.05+/-0.21 mM, respectively. 14-Benzoyltalatisamine exerted voltage-dependent inhibition, markedly accelerated the decay of the current, and caused a significant hyperpolarizing shift of the steady-state activation curve, whereas TEA caused voltage-independent inhibition, without affecting the kinetic parameters of the current. The blockade by 14-benzoyltalatisamine, but not by TEA, was significantly diminished in a high K+ (60 mM) external solution. The potency of 14-benzoyltalatisamine was markedly reduced in the presence of 15 mM TEA. The results suggest that 14-benzoyltalatisamine bind to the external pore entry of the delayed rectifier K+ channel with partial insertion into the selectivity filter, which is in conformity with that predicted by the molecular docking model in the virtual screening.

Discovery of talatisamine as a novel specific blocker for the delayed rectifier K+ channels in rat hippocampal neurons.

PubMed

Song, M-K; Liu, H; Jiang, H-L; Yue, J-M; Hu, G-Y; Chen, H-Z

2008-08-13

Blocking specific K+ channels has been proposed as a promising strategy for the treatment of neurodegenerative diseases. Using a computational virtual screening approach and electrophysiological testing, we found four Aconitum alkaloids are potent blockers of the delayed rectifier K+ channel in rat hippocampal neurons. In the present study, we first tested the action of the four alkaloids on the voltage-gated K+, Na+ and Ca2+ currents in rat hippocampal neurons, and then identified that talatisamine is a specific blocker for the delayed rectifier K+ channel. External application of talatisamine reversibly inhibited the delayed rectifier K+ current (IK) with an IC50 value of 146.0+/-5.8 microM in a voltage-dependent manner, but exhibited very slight blocking effect on the voltage-gated Na+ and Ca2+ currents even at the high concentration of 1-3 mM. Moreover, talatisamine exerted a significant hyperpolarizing shift of the steady-state activation, but did not influence the steady state inactivation of IK and its recovery from inactivation, suggesting that talatisamine had no allosteric action on IK channel and was a pure blocker binding to the external pore entry of the channel. Our present study made the first discovery of potent and specific IK channel blocker from Aconitum alkaloids. It has been argued that suppressing K+ efflux by blocking IK channel may be favorable for Alzheimer's disease therapy. Talatisamine can therefore be considered as a leading compound worthy of further investigations.

High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs

DOEpatents

Shimer, D.W.; Lange, A.C.

1995-05-23

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

DOEpatents

Shimer, Daniel W.; Lange, Arnold C.

1995-01-01

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

Power converter

NASA Technical Reports Server (NTRS)

Black, J. M. (Inventor)

1981-01-01

A dc-to-dc converter employs four transistor switches in a bridge to chop dc power from a source, and a voltage multiplying diode rectifying ladder network to rectify and filter the chopped dc power for delivery to a load. The bridge switches are cross coupled in order for diagonally opposite pairs to turn on and off together using RC networks for the cross coupling to achieve the mode of operation of a free running multivibrator, and the diode rectifying ladder is configured to operate in a push-pull mode driven from opposite sides of the multivibrator outputs of the ridge switches. The four transistor switches provide a square-wave output voltage which as a peak-to-peak amplitude that is twice the input dc voltage, and is thus useful as a dc-to-ac inverter.

Cascaded resonant bridge converters

NASA Technical Reports Server (NTRS)

Stuart, Thomas A. (Inventor)

1989-01-01

A converter for converting a low voltage direct current power source to a higher voltage, high frequency alternating current output for use in an electrical system where it is desired to use low weight cables and other circuit elements. The converter has a first stage series resonant (Schwarz) converter which converts the direct current power source to an alternating current by means of switching elements that are operated by a variable frequency voltage regulator, a transformer to step up the voltage of the alternating current, and a rectifier bridge to convert the alternating current to a direct current first stage output. The converter further has a second stage series resonant (Schwarz) converter which is connected in series to the first stage converter to receive its direct current output and convert it to a second stage high frequency alternating current output by means of switching elements that are operated by a fixed frequency oscillator. The voltage of the second stage output is controlled at a relatively constant value by controlling the first stage output voltage, which is accomplished by controlling the frequency of the first stage variable frequency voltage controller in response to second stage voltage. Fault tolerance in the event of a load short circuit is provided by making the operation of the first stage variable frequency voltage controller responsive to first and second stage current limiting devices. The second stage output is connected to a rectifier bridge whose output is connected to the input of the second stage to provide good regulation of output voltage wave form at low system loads.

Zero-voltage DC/DC converter with asymmetric pulse-width modulation for DC micro-grid system

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren

2018-04-01

This paper presents a zero-voltage switching DC/DC converter for DC micro-grid system applications. The proposed circuit includes three half-bridge circuit cells connected in primary-series and secondary-parallel in order to lessen the voltage rating of power switches and current rating of rectifier diodes. Thus, low voltage stress of power MOSFETs can be adopted for high-voltage input applications with high switching frequency operation. In order to achieve low switching losses and high circuit efficiency, asymmetric pulse-width modulation is used to turn on power switches at zero voltage. Flying capacitors are used between each circuit cell to automatically balance input split voltages. Therefore, the voltage stress of each power switch is limited at Vin/3. Finally, a prototype is constructed and experiments are provided to demonstrate the circuit performance.

Effects of Asymmetric Local Joule Heating on Silicon Nanowire-Based Devices Formed by Dielectrophoresis Alignment Across Pt Electrodes

NASA Astrophysics Data System (ADS)

Ho, Hsiang-Hsi; Lin, Chun-Lung; Tsai, Wei-Che; Hong, Liang-Zheng; Lyu, Cheng-Han; Hsu, Hsun-Feng

2018-01-01

We demonstrate the fabrication and characterization of silicon nanowire-based devices in metal-nanowire-metal configuration using direct current dielectrophoresis. The current-voltage characteristics of the devices were found rectifying, and their direction of rectification could be determined by voltage sweep direction due to the asymmetric Joule heating effect that occurred in the electrical measurement process. The photosensing properties of the rectifying devices were investigated. It reveals that when the rectifying device was in reverse-biased mode, the excellent photoresponse was achieved due to the strong built-in electric field at the junction interface. It is expected that rectifying silicon nanowire-based devices through this novel and facile method can be potentially applied to other applications such as logic gates and sensors.

A combined compensation method for the output voltage of an insulated core transformer power supply

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, L.; Yang, J., E-mail: jyang@mail.hust.edu.cn; Liu, K. F.

2014-06-15

An insulated core transformer (ICT) power supply is an ideal high-voltage generator for irradiation accelerators with energy lower than 3 MeV. However, there is a significant problem that the structure of the segmented cores leads to an increase in the leakage flux and voltage differences between rectifier disks. A high level of consistency in the output of the disks helps to achieve a compact structure by improving the utilization of both the rectifier components and the insulation distances, and consequently increase the output voltage of the power supply. The output voltages of the disks which are far away from themore » primary coils need to be improved to reduce their inhomogeneity. In this study, by investigating and comparing the existing compensation methods, a new combined compensation method is proposed, which increases the turns on the secondary coils and employs parallel capacitors to improve the consistency of the disks, while covering the entire operating range of the power supply. This method turns out to be both feasible and effective during the development of an ICT power supply. The non-uniformity of the output voltages of the disks is less than 3.5% from no-load to full-load, and the power supply reaches an output specification of 350 kV/60 mA.« less

Wireless power transmission for biomedical implants: The role of near-zero threshold CMOS rectifiers.

PubMed

Mohammadi, Ali; Redoute, Jean-Michel; Yuce, Mehmet R

2015-01-01

Biomedical implants require an electronic power conditioning circuitry to provide a stable electrical power supply. The efficiency of wireless power transmission is strongly dependent on the power conditioning circuitry specifically the rectifier. A cross-connected CMOS bridge rectifier is implemented to demonstrate the impact of thresholds of rectifiers on wireless power transfer. The performance of the proposed rectifier is experimentally compared with a conventional Schottky diode full wave rectifier over 9 cm distance of air and tissue medium between the transmitter and receiver. The output voltage generated by the CMOS rectifier across a 1 KΩ resistive load is around twice as much as the Schottky rectifier.

Voltage sensitivity of M2 muscarinic receptors underlies the delayed rectifier-like activation of ACh-gated K(+) current by choline in feline atrial myocytes.

PubMed

Navarro-Polanco, Ricardo A; Aréchiga-Figueroa, Iván A; Salazar-Fajardo, Pedro D; Benavides-Haro, Dora E; Rodríguez-Elías, Julio C; Sachse, Frank B; Tristani-Firouzi, Martin; Sánchez-Chapula, José A; Moreno-Galindo, Eloy G

2013-09-01

Choline (Ch) is a precursor and metabolite of the neurotransmitter acetylcholine (ACh). In canine and guinea pig atrial myocytes, Ch was shown to activate an outward K(+) current in a delayed rectifier fashion. This current has been suggested to modulate cardiac electrical activity and to play a role in atrial fibrillation pathophysiology. However, the exact nature and identity of this current has not been convincingly established. We recently described the unique ligand- and voltage-dependent properties of muscarinic activation of ACh-activated K(+) current (IKACh) and showed that, in contrast to ACh, pilocarpine induces a current with delayed rectifier-like properties with membrane depolarization. Here, we tested the hypothesis that Ch activates IKACh in feline atrial myocytes in a voltage-dependent manner similar to pilocarpine. Single-channel recordings, biophysical profiles, specific pharmacological inhibition and computational data indicate that the current activated by Ch is IKACh. Moreover, we show that membrane depolarization increases the potency and efficacy of IKACh activation by Ch and thus gives the appearance of a delayed rectifier activating K(+) current at depolarized potentials. Our findings support the emerging concept that IKACh modulation is both voltage- and ligand-specific and reinforce the importance of these properties in understanding cardiac physiology.

Switched-capacitor isolated LED driver

DOEpatents

Sanders, Seth R.; Kline, Mitchell

2016-03-22

A switched-capacitor voltage converter which is particularly well-suited for receiving a line voltage from which to drive current through a series of light emitting diodes (LEDs). Input voltage is rectified in a multi-level rectifier network having switched capacitors in an ascending-bank configuration for passing voltages in uniform steps between zero volts up to full received voltage V.sub.DC. A regulator section, operating on V.sub.DC, comprises switched-capacitor stages of H-bridge switching and flying capacitors. A current controlled oscillator drives the states of the switched-capacitor stages and changes its frequency to maintain a constant current to the load. Embodiments are described for isolating the load from the mains, utilizing an LC tank circuit or a multi-primary-winding transformer.

Ionization tube simmer current circuit

DOEpatents

Steinkraus, R.F. Jr.

1994-12-13

A highly efficient flash lamp simmer current circuit utilizes a fifty percent duty cycle square wave pulse generator to pass a current over a current limiting inductor to a full wave rectifier. The DC output of the rectifier is then passed over a voltage smoothing capacitor through a reverse current blocking diode to a flash lamp tube to sustain ionization in the tube between discharges via a small simmer current. An alternate embodiment of the circuit combines the pulse generator and inductor in the form of an FET off line square wave generator with an impedance limited step up output transformer which is then applied to the full wave rectifier as before to yield a similar simmer current. 6 figures.

Ionization tube simmer current circuit

DOEpatents

Steinkraus, Jr., Robert F.

1994-01-01

A highly efficient flash lamp simmer current circuit utilizes a fifty percent duty cycle square wave pulse generator to pass a current over a current limiting inductor to a full wave rectifier. The DC output of the rectifier is then passed over a voltage smoothing capacitor through a reverse current blocking diode to a flash lamp tube to sustain ionization in the tube between discharges via a small simmer current. An alternate embodiment of the circuit combines the pulse generator and inductor in the form of an FET off line square wave generator with an impedance limited step up output transformer which is then applied to the full wave rectifier as before to yield a similar simmer current.

Concentration-jump analysis of voltage-dependent conductances activated by glutamate and kainate in neurons of the avian cochlear nucleus.

PubMed Central

Raman, I M; Trussell, L O

1995-01-01

We have examined the mechanisms underlying the voltage sensitivity of alpha-amino-3-hydroxy-5-methyl-4-isoxazolepropionate receptors in voltage-clamped outside-out patches and whole cells taken from the nucleus magnocellularis of the chick. Responses to either glutamate or kainate had outwardly rectifying current-voltage relations. The rate and extent of desensitization during prolonged exposure to agonist, and the rate of deactivation after brief exposure to agonist, decreased at positive potentials, suggesting that a kinetic transition was sensitive to membrane potential. Voltage dependence of the peak conductance and of the deactivation kinetics persisted when desensitization was reduced with aniracetam or blocked with cyclothiazide. Furthermore, the rate of recovery from desensitization to glutamate was not voltage dependent. Upon reduction of extracellular divalent cation concentration, kainate-evoked currents increased but preserved rectifying current-voltage relations. Rectification was strongest at lower kainate concentrations. Surprisingly, nonstationary variance analysis of desensitizing responses to glutamate or of the current deactivation after kainate removal revealed an increase in the mean single-channel conductance with more positive membrane potentials. These data indicate that the rectification of the peak response to a high agonist concentration reflects an increase in channel conductance, whereas rectification of steady-state current is dominated by voltage-sensitive channel kinetics. Images FIGURE 2 FIGURE 3 PMID:8580330

UV/ozone assisted local graphene (p)/ZnO(n) heterojunctions as a nanodiode rectifier

NASA Astrophysics Data System (ADS)

Sahatiya, Parikshit; Badhulika, Sushmee

2016-07-01

Here we report the fabrication of a novel graphene/ZnO nanodiode by UV/ozone assisted oxidation of graphene and demonstrate its application as a half-wave rectifier to generate DC voltage. The method involves the use of electrospinning for one-step in situ synthesis and alignment of single Gr/ZnO nanocomposite across metal electrodes. On subsequent UV illumination, graphene oxidizes, which induces p type doping and ZnO being an n type semiconductor, thus resulting in the formation of a nanodiode. The as-fabricated device shows strong non-linear current-voltage characteristic similar to that of conventional semiconductor p-n junction diodes. Excellent rectifying behavior with a rectification ratio of ~103 was observed and the nanodiodes were found to exhibit long-term repeatability in their performance. Ideality factor and barrier height, as calculated by the thermionic emission model, were found to be 1.6 and 0.504 eV respectively. Due to the fact that diodes are the basic building blocks in the electronics and semiconductor industry, the successful fabrication of these nanodiodes based on UV assisted p type doping of graphene indicates that this approach can be used for developing highly scalable and efficient components for nanoelectronics, such as rectifiers and logic gates that find applications in numerous fields.

Fast switching wideband rectifying circuit for future RF energy harvesting

NASA Astrophysics Data System (ADS)

Asmeida, Akrem; Mustam, Saizalmursidi Md; Abidin, Z. Z.; Ashyap, A. Y. I.

2017-09-01

This paper presents the design and simulation of fast switching microwave rectifying circuit for ultra wideband patch antenna over a dual-frequency band (1.8 GHz for GSM and 2.4 GHz for ISM band). This band was chosen due to its high signal availability in the surrounding environment. New rectifying circuit topology with pair-matching trunks is designed using Advanced Design System (ADS) software. These trunks are interfaced with power divider to achieve good bandwidth, fast switching and high efficiency. The power divider acts as a good isolator between the trunks and its straightforward design structure makes it a good choice for a single feed UWB antenna. The simulated results demonstrate that the maximum output voltage is 2.13 V with an input power of -5 dBm. Moreover, the rectifier offers maximum efficiency of 86% for the input power of -5 dBm at given band, which could easily power up wireless sensor networks (WSN) and other small devices sufficiently.

Switchable Schottky diode characteristics induced by electroforming process in Mn-doped ZnO thin films

NASA Astrophysics Data System (ADS)

Nam, Yoonseung; Hwang, Inrok; Oh, Sungtaek; Lee, Sangik; Lee, Keundong; Hong, Sahwan; Kim, Jinsoo; Choi, Taekjib; Ho Park, Bae

2013-04-01

We investigated the asymmetric current-voltage (I-V) characteristics and accompanying unipolar resistive switching of pure ZnO and Mn(1%)-doped ZnO (Mn:ZnO) films sandwiched between Pt electrodes. After electroforming, a high resistance state of the Mn:ZnO capacitor revealed switchable diode characteristics whose forward direction was determined by the polarity of the electroforming voltage. Linear fitting of the I-V curves highlighted that the rectifying behavior was influenced by a Schottky barrier at the Pt/Mn:ZnO interface. Our results suggest that formation of conducting filaments from the cathode during the electroforming process resulted in a collapse of the Schottky barrier (near the cathode), and rectifying behaviors dominated by a remnant Schottky barrier near the anode.

Power Quality Improvement Using an Enhanced Network-Side-Shunt-Connected Dynamic Voltage Restorer

NASA Astrophysics Data System (ADS)

Fereidouni, Alireza; Masoum, Mohammad A. S.; Moghbel, Moayed

2015-10-01

Among the four basic dynamic voltage restorer (DVR) topologies, the network-side shunt-connected DVR (NSSC-DVR) has a relatively poor performance and is investigated in this paper. A new configuration is proposed and implemented for NSSC-DVR to enhance its performance in compensating (un)symmetrical deep and long voltage sags and mitigate voltage harmonics. The enhanced NSSC-DVR model includes a three-phase half-bridge semi-controlled network-side-shunt-connected rectifier and a three-phase full-bridge series-connected inverter implemented with a back-to-back configuration through a bidirectional buck-boost converter. The network-side-shunt-connected rectifier is employed to inject/draw the required energy by NSSC-DVR to restore the load voltage to its pre-fault value under sag/swell conditions. The buck-boost converter is responsible for maintaining the DC-link voltage of the series-connected inverter at its designated value in order to improve the NSSC-DVR capability in compensating deep and long voltage sags/swells. The full-bridge series-connected inverter permits to compensate unbalance voltage sags containing zero-sequence component. The harmonic compensation of the load voltage is achieved by extracting harmonics from the distorted network voltage using an artificial neural network (ANN) method called adaptive linear neuron (Adaline) strategy. Detailed simulations are performed by SIMULINK/MATLAB software for six case studies to verify the highly robustness of the proposed NSSC-DVR model under various conditions.

APPARATUS FOR ELECTRON BEAM HEATING CONTROL

DOEpatents

Jones, W.H.; Reece, J.B.

1962-09-18

An improved electron beam welding or melting apparatus is designed which utilizes a high voltage rectifier operating below its temperature saturation region to decrease variations in electron beam current which normally result from the gas generated in such apparatus. (AEC)

High voltage power supply

NASA Technical Reports Server (NTRS)

Ruitberg, A. P.; Young, K. M. (Inventor)

1985-01-01

A high voltage power supply is formed by three discrete circuits energized by a battery to provide a plurality of concurrent output signals floating at a high output voltage on the order of several tens of kilovolts. In the first two circuits, the regulator stages are pulse width modulated and include adjustable ressistances for varying the duty cycles of pulse trains provided to corresponding oscillator stages while the third regulator stage includes an adjustable resistance for varying the amplitude of a steady signal provided to a third oscillator stage. In the first circuit, the oscillator, formed by a constant current drive network and a tuned resonant network included a step up transformer, is coupled to a second step up transformer which, in turn, supplies an amplified sinusoidal signal to a parallel pair of complementary poled rectifying, voltage multiplier stages to generate the high output voltage.

Development and fabrication of improved Schottky power diodes

NASA Technical Reports Server (NTRS)

Cordes, L. F.; Garfinkel, M.; Taft, E. A.

1975-01-01

Reproducible methods for the fabrication of silicon Schottky diodes have been developed for tungsten, aluminum, conventional platinum silicide, and low temperature platinum silicide. Barrier heights and barrier lowering under reverse bias have been measured, permitting the accurate prediction of forward and reverse diode characteristics. Processing procedures have been developed that permit the fabrication of large area (about 1 sq cm) mesageometry power Schottky diodes with forward and reverse characteristics that approach theoretical values. A theoretical analysis of the operation of bridge rectifier circuits has been performed, which indicates the ranges of frequency and voltage for which Schottky rectifiers are preferred to p-n junctions. Power Schottky rectifiers have been fabricated and tested for voltage ratings up to 140 volts.

Voltage-dependent ion channels in the mouse RPE: comparison with Norrie disease mice.

PubMed

Wollmann, Guido; Lenzner, Steffen; Berger, Wolfgang; Rosenthal, Rita; Karl, Mike O; Strauss, Olaf

2006-03-01

We studied electrophysiological properties of cultured retinal pigment epithelial (RPE) cells from mouse and a mouse model for Norrie disease. Wild-type RPE cells revealed the expression of ion channels known from other species: delayed-rectifier K(+) channels composed of Kv1.3 subunits, inward rectifier K(+) channels, Ca(V)1.3 L-type Ca(2+) channels and outwardly rectifying Cl(-) channels. Expression pattern and the ion channel characteristics current density, blocker sensitivity, kinetics and voltage-dependence were compared in cells from wild-type and Norrie mice. Although no significant differences were observed, our study provides a base for future studies on ion channel function and dysfunction in transgenic mouse models.

E-beam high voltage switching power supply

DOEpatents

Shimer, Daniel W.; Lange, Arnold C.

1997-01-01

A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360.degree./n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load.

E-beam high voltage switching power supply

DOEpatents

Shimer, D.W.; Lange, A.C.

1997-03-11

A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360{degree}/n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load. 7 figs.

Direct block of native and cloned (Kir2.1) inward rectifier K+ channels by chloroethylclonidine

PubMed Central

Barrett-Jolley, R; Dart, C; Standen, N B

1999-01-01

We have investigated the inhibition of inwardly rectifying potassium channels by the α-adrenergic agonist/antagonist chloroethylclonidine (CEC). We used two preparations; two-electrode voltage-clamp of rat isolated flexor digitorum brevis muscle and whole-cell patch-clamp of cell lines transfected with Kir2.1 (IRK1).In skeletal muscle and at a membrane potential of −50 mV, chloroethylclonidine (CEC), an agonist at α2-adrenergic receptors and an antagonist at α1x-receptors, was found to inhibit the inward rectifier current with a Ki of 30 μM.The inhibition of skeletal muscle inward rectifier current by CEC was not mimicked by clonidine, adrenaline or noradrenaline and was not sensitive to high concentrations of α1-(prazosin) or α2-(rauwolscine) antagonists.The degree of current inhibition by CEC was found to vary with the membrane potential (approximately 70% block at −50 mV c.f. ∼10% block at −190 mV). The kinetics of this voltage dependence were further investigated using recombinant inward rectifier K+ channels (Kir2.1) expressed in the MEL cell line. Using a two pulse protocol, we calculated the time constant for block to be ∼8 s at 0 mV, and the rate of unblock was described by the relationship τ=exp((Vm+149)/22) s.This block was effective when CEC was applied to either the inside or the outside of patch clamped cells, but ineffective when a polyamine binding site (aspartate 172) was mutated to asparagine.The data suggest that the clonidine-like imidazoline compound, CEC, inhibits inward rectifier K+ channels independently of α-receptors by directly blocking the channel pore, possibly at an intracellular polyamine binding site. PMID:10516659

Non-Self-Maintained Discharge Application for Fuel Activation

DTIC Science & Technology

2010-09-21

provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently ...voltage accelerating tube (1); - An injector of electrons with the thermo emission heated cathode (2); - The high-voltage rectifier (3); - A...auxiliary systems of the accelerator. The electron injector (2) is supplied by the thermo - emission cathode, allowing to generate an electron

Gate-Controlled BP-WSe2 Heterojunction Diode for Logic Rectifiers and Logic Optoelectronics.

PubMed

Li, Dong; Wang, Biao; Chen, Mingyuan; Zhou, Jun; Zhang, Zengxing

2017-06-01

p-n junctions play an important role in modern semiconductor electronics and optoelectronics, and field-effect transistors are often used for logic circuits. Here, gate-controlled logic rectifiers and logic optoelectronic devices based on stacked black phosphorus (BP) and tungsten diselenide (WSe 2 ) heterojunctions are reported. The gate-tunable ambipolar charge carriers in BP and WSe 2 enable a flexible, dynamic, and wide modulation on the heterojunctions as isotype (p-p and n-n) and anisotype (p-n) diodes, which exhibit disparate rectifying and photovoltaic properties. Based on such characteristics, it is demonstrated that BP-WSe 2 heterojunction diodes can be developed for high-performance logic rectifiers and logic optoelectronic devices. Logic optoelectronic devices can convert a light signal to an electric one by applied gate voltages. This work should be helpful to expand the applications of 2D crystals. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A self-powered piezoelectric energy harvesting interface circuit with efficiency-enhanced P-SSHI rectifier

NASA Astrophysics Data System (ADS)

Liu, Lianxi; Pang, Yanbo; Yuan, Wenzhi; Zhu, Zhangming; Yang, Yintang

2018-04-01

The key to self-powered technique is initiative to harvest energy from the surrounding environment. Harvesting energy from an ambient vibration source utilizing piezoelectrics emerged as a popular method. Efficient interface circuits become the main limitations of existing energy harvesting techniques. In this paper, an interface circuit for piezoelectric energy harvesting is presented. An active full bridge rectifier is adopted to improve the power efficiency by reducing the conduction loss on the rectifying path. A parallel synchronized switch harvesting on inductor (P-SSHI) technique is used to improve the power extraction capability from piezoelectric harvester, thereby trying to reach the theoretical maximum output power. An intermittent power management unit (IPMU) and an output capacitor-less low drop regulator (LDO) are also introduced. Active diodes (AD) instead of traditional passive ones are used to reduce the voltage loss over the rectifier, which results in a good power efficiency. The IPMU with hysteresis comparator ensures the interface circuit has a large transient output power by limiting the output voltage ranges from 2.2 to 2 V. The design is fabricated in a SMIC 0.18 μm CMOS technology. Simulation results show that the flipping efficiency of the P-SSHI circuit is over 80% with an off-chip inductor value of 820 μH. The output power the proposed rectifier can obtain is 44.4 μW, which is 6.7× improvement compared to the maximum output power of a traditional rectifier. Both the active diodes and the P-SSHI help to improve the output power of the proposed rectifier. LDO outputs a voltage of 1.8 V with the maximum 90% power efficiency. The proposed P-SSHI rectifier interface circuit can be self-powered without the need for additional power supply. Project supported by the National Natural Science Foundation of China (Nos. 61574103, U1709218) and the Key Research and Development Program of Shaanxi Province (No. 2017ZDXM-GY-006).

Energy-Saving Inverter

NASA Technical Reports Server (NTRS)

Rippel, W. E.; Edwards, D. B.

1984-01-01

Commutation by field-effect transistor allows more efficient operation. High voltage field-effect transistor (FET) controls silicon controlled rectifiers (SCR's). Circuit requires only one capacitor and one inductor in commutation circuit: simpler, more efficient, and more economical than conventional inverters. Adaptable to dc-to-dc converters.

High performance ripple feedback for the buck unity-power-factor rectifier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lo, Y.W.; King, R.J.

1995-03-01

The buck unity-power-factor rectifier has harmonic-free input current with complete load regulation down to zero output voltage. A new ``nonlinear ripple feedback`` is proposed which exactly cancels the spoiling effect of dc-side current ripple on the low-distortion ac line current waveforms, even for large amounts of ripple. This cancellation is independent of operating point and readily implemented with analog hardware, thereby permitting economies in the design of the dc filter while maintaining harmonic-free operation. Both large-signal and incremental analyses of the rectifier are given. Confirming experimental results from a 1-kW 48-V isolated battery charger operating with current-ripple levels ranging frommore » 50% to discontinuous-conduction-mode operation are given.« less

Self-Rectifying Effect in Resistive Switching Memory Using Amorphous InGaZnO

NASA Astrophysics Data System (ADS)

Lee, Jin-Woo; Kwon, Hyeon-Min; Kim, Myeong-Ho; Lee, Seung-Ryul; Kim, Young-Bae; Choi, Duck-Kyun

2014-05-01

Resistance random access memory (ReRAM) has received attention as next-generation memory because of its excellent operating properties and high density integration capability as a crossbar array. However, the application of the existing ReRAM as a crossbar array may lead to crosstalk between adjacent cells due to its symmetric I- V characteristics. In this study, the self-rectifying effect of contact between amorphous In-Ga-Zn-O (a-IGZO) and TaO x was examined in a Pt/a-IGZO/TaO x /Al2O3/W structure. The experimental results show not only self-rectifying behavior but also forming-free characteristics. During the deposition of a-IGZO on the TaO x , an oxygen-rich TaO x interfacial layer was formed. The rectifying effect was observed regardless of the interface formation and is believed to be associated with Schottky contact formation between a-IGZO and TaO x . The current level remained unchanged despite repeated DC sweep cycles. The low resistance state/high resistance state ratio was about 101 at a read voltage of -0.5 V, and the rectifying ratio was about 103 at ±2 V.

A High Power Density Single-Phase PWM Rectifier with Active Ripple Energy Storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ning, Puqi; Wang, Ruxi; Wang, Fei

It is well known that there exist second-order harmonic current and corresponding ripple voltage on dc bus for single phase PWM rectifiers. The low frequency harmonic current is normally filtered using a bulk capacitor in the bus which results in low power density. This paper proposed an active ripple energy storage method that can effectively reduce the energy storage capacitance. The feed-forward control method and design considerations are provided. Simulation and 15 kW experimental results are provided for verification purposes.

The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode.

PubMed

Chang, Wen-Chung; Su, Sheng-Chien; Wu, Chia-Ching

2016-06-30

Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and current-voltage (I-V) measurements. Nonlinear and rectifying I-V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions.

40 CFR 63.341 - Definitions and nomenclature.

Code of Federal Regulations, 2010 CFR

2010-07-01

... electrical insulation) using a chromic acid solution. In chromium anodizing, the part to be anodized acts as... chromium anodizing: rectifiers fitted with controls to allow for voltage adjustments, heat exchanger... electroplating: Rectifiers, anodes, heat exchanger equipment, circulation pumps, and air agitation systems...

Foundry Technologies Focused on Environmental and Ecological Applications

NASA Astrophysics Data System (ADS)

Roizin, Ya.; Lisiansky, M.; Pikhay, E.

Solutions allowing fabrication of remote control systems with integrated sensors (motes) were introduced as a part of CMOS foundry production platform and verified on silicon. The integrated features include sensors employing principles previously verified in the development of ultra-low power consuming non-volatile memories (C-Flash, MRAM) and components allowing low-power energy harvesting (low voltage rectifiers, high -voltage solar cells). The developed systems are discussed with emphasis on their environmental and security applications.

A High Power Density Single-Phase PWM Rectifier With Active Ripple Energy Storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Ruxi; Wang, Fei; Boroyevich, Dushan

It is well known that single-phase pulse width modulation rectifiers have second-order harmonic currents and corresponding ripple voltages on the dc bus. The low-frequency harmonic current is normally filtered using a bulk capacitor in the bus, which results in low power density. However, pursuing high power density in converter design is a very important goal in the aerospace applications. This paper studies methods for reducing the energy storage capacitor for single-phase rectifiers. The minimum ripple energy storage requirement is derived independently of a specific topology. Based on theminimum ripple energy requirement, the feasibility of the active capacitor s reduction schemesmore » is verified. Then, we propose a bidirectional buck boost converter as the ripple energy storage circuit, which can effectively reduce the energy storage capacitance. The analysis and design are validated by simulation and experimental results.« less

Enhancement of delayed-rectifier potassium conductance by low concentrations of local anaesthetics in spinal sensory neurones

PubMed Central

Olschewski, Andrea; Wolff, Matthias; Bräu, Michael E; Hempelmann, Gunter; Vogel, Werner; Safronov, Boris V

2002-01-01

Combining the patch-clamp recordings in slice preparation with the ‘entire soma isolation' method we studied action of several local anaesthetics on delayed-rectifier K+ currents in spinal dorsal horn neurones.Bupivacaine, lidocaine and mepivacaine at low concentrations (1–100 μM) enhanced delayed-rectifier K+ current in intact neurones within the spinal cord slice, while exhibiting a partial blocking effect at higher concentrations (>100 μM). In isolated somata 0.1–10 μM bupivacaine enhanced delayed-rectifier K+ current by shifting its steady-state activation characteristic and the voltage-dependence of the activation time constant to more negative potentials by 10–20 mV.Detailed analysis has revealed that bupivacaine also increased the maximum delayed-rectifier K+ conductance by changing the open probability, rather than the unitary conductance, of the channel.It is concluded that local anaesthetics show a dual effect on delayed-rectifier K+ currents by potentiating them at low concentrations and partially suppressing at high concentrations. The phenomenon observed demonstrated the complex action of local anaesthetics during spinal and epidural anaesthesia, which is not restricted to a suppression of Na+ conductance only. PMID:12055132

Power Generation from a Radiative Thermal Source Using a Large-Area Infrared Rectenna

NASA Astrophysics Data System (ADS)

Shank, Joshua; Kadlec, Emil A.; Jarecki, Robert L.; Starbuck, Andrew; Howell, Stephen; Peters, David W.; Davids, Paul S.

2018-05-01

Electrical power generation from a moderate-temperature thermal source by means of direct conversion of infrared radiation is important and highly desirable for energy harvesting from waste heat and micropower applications. Here, we demonstrate direct rectified power generation from an unbiased large-area nanoantenna-coupled tunnel diode rectifier called a rectenna. Using a vacuum radiometric measurement technique with irradiation from a temperature-stabilized thermal source, a generated power density of 8 nW /cm2 is observed at a source temperature of 450 °C for the unbiased rectenna across an optimized load resistance. The optimized load resistance for the peak power generation for each temperature coincides with the tunnel diode resistance at zero bias and corresponds to the impedance matching condition for a rectifying antenna. Current-voltage measurements of a thermally illuminated large-area rectenna show current zero crossing shifts into the second quadrant indicating rectification. Photon-assisted tunneling in the unbiased rectenna is modeled as the mechanism for the large short-circuit photocurrents observed where the photon energy serves as an effective bias across the tunnel junction. The measured current and voltage across the load resistor as a function of the thermal source temperature represents direct current electrical power generation.

Terahertz Detection and Imaging Using Graphene Ballistic Rectifiers.

PubMed

Auton, Gregory; But, Dmytro B; Zhang, Jiawei; Hill, Ernie; Coquillat, Dominique; Consejo, Christophe; Nouvel, Philippe; Knap, Wojciech; Varani, Luca; Teppe, Frederic; Torres, Jeremie; Song, Aimin

2017-11-08

A graphene ballistic rectifier is used in conjunction with an antenna to demonstrate a rectenna as a terahertz (THz) detector. A small-area (<1 μm 2 ) local gate is used to adjust the Fermi level in the device to optimize the output while minimizing the impact on the cutoff frequency. The device operates in both n- and p-type transport regimes and shows a peak extrinsic responsivity of 764 V/W and a corresponding noise equivalent power of 34 pW Hz -1/2 at room temperature with no indications of a cutoff frequency up to 0.45 THz. The device also demonstrates a linear response for more than 3 orders of magnitude of input power due to its zero threshold voltage, quadratic current-voltage characteristics and high saturation current. Finally, the device is used to take an image of an optically opaque object at 0.685 THz, demonstrating potential in both medical and security imaging applications.

The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode

PubMed Central

Chang, Wen-Chung; Su, Sheng-Chien; Wu, Chia-Ching

2016-01-01

Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and current−voltage (I−V) measurements. Nonlinear and rectifying I−V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions. PMID:28773656

MHD generator with improved network coupling electrodes to a load

DOEpatents

Rosa, Richard J.

1977-01-01

An MHD generator has a plurality of segmented electrodes extending longitudinally of a duct, whereby progressively increasing high DC voltages are derived from a set of cathode electrodes and progressively increasing low DC voltages are derived from a set of anode electrodes. First and second load terminals are respectively connected to the cathode and anode electrodes by separate coupling networks, each of which includes a number of SCR's and a number of diode rectifiers.

Voltage mode electronically tunable full-wave rectifier

NASA Astrophysics Data System (ADS)

Petrović, Predrag B.; Vesković, Milan; Đukić, Slobodan

2017-01-01

The paper presents a new realization of bipolar full-wave rectifier of input sinusoidal signals, employing one MO-CCCII (multiple output current controlled current conveyor), a zero-crossing detector (ZCD), and one resistor connected to fixed potential. The circuit provides the operating frequency up to 10 MHz with increased linearity and precision in processing of input voltage signal, with a very low harmonic distortion. The errors related to the signal processing and errors bound were investigated and provided in the paper. The PSpice simulations are depicted and agree well with the theoretical anticipation. The maximum power consumption of the converter is approximately 2.83 mW, at ±1.2 V supply voltages.

AC electroosmotic pump with bubble-free palladium electrodes and rectifying polymer membrane valves.

PubMed

Brask, Anders; Snakenborg, Detlef; Kutter, Jörg P; Bruus, Henrik

2006-02-01

We present the design, test and theoretical analysis of a novel micropump. The purpose is to make a pump with large flow rate (approximately 10 microL min-1) and high pressure capacity (approximately 1 bar) powered by a low voltage DeltaV<30 V. The pump is operated in AC mode with an electroosmotic actuator in connection with a full wave rectifying valve system. Individual valves are based on a flexible membrane with a slit. Bubble-free palladium electrodes are implemented in order to increase the range of applications and reduce maintenance.

Failure Detecting Method of Fault Current Limiter System with Rectifier

NASA Astrophysics Data System (ADS)

Tokuda, Noriaki; Matsubara, Yoshio; Asano, Masakuni; Ohkuma, Takeshi; Sato, Yoshibumi; Takahashi, Yoshihisa

A fault current limiter (FCL) is extensively needed to suppress fault current, particularly required for trunk power systems connecting high-voltage transmission lines, such as 500kV class power system which constitutes the nucleus of the electric power system. We proposed a new type FCL system (rectifier type FCL), consisting of solid-state diodes, DC reactor and bypass AC reactor, and demonstrated the excellent performances of this FCL by developing the small 6.6kV and 66kV model. It is important to detect the failure of power devices used in the rectifier under the normal operating condition, for keeping the excellent reliability of the power system. In this paper, we have proposed a new failure detecting method of power devices most suitable for the rectifier type FCL. This failure detecting system is simple and compact. We have adapted the proposed system to the 66kV prototype single-phase model and successfully demonstrated to detect the failure of power devices.

Direct current ballast circuit for metal halide lamp

NASA Technical Reports Server (NTRS)

Lutus, P. (Inventor)

1981-01-01

A direct current ballast circuit for a two electrode metal halide lamp is described. Said direct current ballast circuit includes a low voltage DC input and a high frequency power amplifier and power transformer for developing a high voltage output. The output voltage is rectified by diodes and filtered by inductor and capacitor to provide a regulated DC output through commutating diodes to one terminal of the lamp at the output terminal. A feedback path from the output of the filter capacitor through the bias resistor to power the high frequency circuit which includes the power amplifier and the power transformer for sustaining circuit operations during low voltage transients on the input DC supply is described. A current sensor connected to the output of the lamp through terminal for stabilizing lamp current following breakdown of the lamp is described.

Rectifying properties of p-GaN nanowires and an n-silicon heterojunction vertical diode.

PubMed

Manna, Sujit; Ashok, Vishal D; De, S K

2010-12-01

The heterojunction of a Pd-doped p-GaN nanowire and n-Si (100) is fabricated vertically by the vapor-liquid-solid method. The average diameter of the nanowire is 40 nm. The vertical junction reveals a significantly high rectification ratio of 10(3) at 5 V, a moderate ideality factor of ∼2, and a high breakdown voltage of ∼40 V. The charge transport across the p-n junction is dominated by the electron-hole recombination process. The voltage dependence of capacitance indicates a graded-type junction. The resistance of the junction decreases with an increase in the bias voltage confirmed by impedance measurements.

Development and fabrication of a high current, fast recovery power diode

NASA Technical Reports Server (NTRS)

Berman, A. H.; Balodis, V.; Devance, D. C.; Gaugh, C. E.; Karlsson, E. A.

1983-01-01

A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

NASA Technical Reports Server (NTRS)

1996-01-01

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Batteryless magneto-driven portable radiac

DOEpatents

Waechter, D.A.; Bjarke, G.O.; Trujillo, F.; Wolf, M.A.; Umbarger, C.J.

1984-10-19

A hand-powerd alternator for generating an alternating voltage provides same through a rectifier to a high capacity capacitor which stores the resultant dc voltage and drives a voltage regulator to provide a constant low voltage output for a portable radiation detection instrument. The instrument includes a Geiger-Mueller detector tube whose output is fed to a pulse detector and then through an event counter and LCD driver circuit to an LCD bar graph for visual display. An audio driver and an audio output is also provided. All circuitry used is low power so that the capacitor can be readily charged to a sufficient level to provide power for at least 30 minutes. A low voltage indicator is provided on the LCD display to indicate the need for manual recharging.

Batteryless magneto-driven portable radiac

DOEpatents

Waechter, David A.; Bjarke, George O.; Trujillo, Faustin; Wolf, Michael A.; Umbarger, C. John

1986-01-01

A hand-powered alternator for generating an alternating voltage provides same through a rectifier to a high capacity capacitor which stores the resultant dc voltage and drives a voltage regulator to provide a constant low voltage output for a portable radiation detection instrument. The instrument includes a Geiger-Muller detector tube whose output is fed to a pulse detector and then through an event counter and LCD driver circuit to an LCD bar graph for visual display. An audio driver and an audio output is also provided. All circuitry used is low power so that the capacitor can be readily charged to a sufficient level to provide power for at least 30 minutes. A low voltage indicator is provided on the LCD display to indicate the need for manual recharging.

Design and test of a 2.25-MW transformer rectifier assembly

NASA Technical Reports Server (NTRS)

Cormier, R.; Daeges, J.

1989-01-01

A new 2.25-MW transformer rectifier assembly was fabricated for DSS-13 at Goldstone, California. The transformer rectifier will provide constant output power of 2.25 MW at any voltage from 31 kV to 125 kV. This will give a new capability of 1 MW of RF power at X-band, provided appropriate microwave tubes are in the power amplifier. A description of the design and test results is presented.

Physiological and molecular characterization of an IRK-type inward rectifier K+ channel in a tumour mast cell line.

PubMed

Wischmeyer, E; Lentes, K U; Karschin, A

1995-04-01

The basophilic leucaemia cell line RBL-2H3 exhibits a robust inwardly rectifying potassium current, IKIR, which is likely to be modulated by G proteins. We examined the physiological and molecular properties of this KIR conductance to define the nature of the underlying channel species. The macroscopic conductance revealed characteristics typical of classical K+ inward rectifiers of the IRK type. Channel gating was rapid, first order (tau approximately 1 ms at -100 mV) and steeply voltage dependent. Both activation potential and slope conductance were dependent on extracellular K+ concentration ([K+]o) and inward rectification persisted in the absence of internal Mg2+. The current was susceptible to a concentration- and voltage-dependent block by extracellular Na+, Cs+ and Ba2+. Initial IKIR whole-cell amplitudes as well as current rundown were dependent on the presence of 1 mM internal ATP. Perfusion of intracellular guanosine 5'-Q-(3-thiotriphosphate) (GTP[gamma S]) suppressed IKIR with an average half-time of decline of approximately 400 s. It was demonstrated that the dominant IRK-type 25 pS conductance channel was indeed suppressed by 100 microM preloaded GTP[gamma S]. Reverse transcriptase-polymerase chain reactions (RT-PCR) with RBL cell poly(A)+ RNA identified a full length K+ inward rectifier with 94% base pair homology to the recently cloned mouse IRK1 channel. It is concluded that RBL cells express a classical voltage-dependent IRK-type K+ inward rectifier RBL-IRK1 which is negatively controlled by G proteins.

Piezoelectric energy harvester interface with real-time MPPT

NASA Astrophysics Data System (ADS)

Elliott, A. D. T.; Mitcheson, P. D.

2014-11-01

Power of resonant piezoelectric harvesters can be severely limited if the damping force cannot be dynamically altered as the mechanical excitation level changes. The singlesupply pre-biasing (SSPB) technique enables the Coulomb damping force to be set by a single voltage and so by varying that voltage, real-time adaptation to variations in the mechanical force can be implemented. Similarly the conduction angle of a diode bridge rectifier circuit can be altered by changing the biasing voltage applied. This paper presents a method of achieving this by altering the amount of energy transferred from the pre-biasing capacitor used in SSPB and the diode bridge rectifier to a storage battery via a buck converter. The control system was implemented on a FPGA and consumed 50 μW.

‘Sleepy’ inward rectifier channels in guinea-pig cardiomyocytes are activated only during strong hyperpolarization

PubMed Central

Liu, Gong Xin; Daut, Jürgen

2002-01-01

K+ channels of isolated guinea-pig cardiomyocytes were studied using the patch-clamp technique. At transmembrane potentials between −120 and −220 mV we observed inward currents through an apparently novel channel. The novel channel was strongly rectifying, no outward currents could be recorded. Between −200 and −160 mV it had a slope conductance of 42.8 ± 3.0 pS (s.d.; n = 96). The open probability (Po) showed a sigmoid voltage dependence and reached a maximum of 0.93 at −200 mV, half-maximal activation was approximately −150 mV. The voltage dependence of Po was not affected by application of 50 μm isoproterenol. The open-time distribution could be described by a single exponential function, the mean open time ranged between 73.5 ms at −220 mV and 1.4 ms at −160 mV. At least two exponential components were required to fit the closed time distribution. Experiments with different external Na+, K+ and Cl− concentrations suggested that the novel channel is K+ selective. Extracellular Ba2+ ions gave rise to a voltage-dependent reduction in Po by inducing long closed states; Cs+ markedly reduced mean open time at −200 mV. In cell-attached recordings the novel channel frequently converted to a classical inward rectifier channel, and vice versa. This conversion was not voltage dependent. After excision of the patch, the novel channel always converted to a classical inward rectifier channel within 0–3 min. This conversion was not affected by intracellular Mg2+, phosphatidylinositol (4,5)-bisphosphate or spermine. Taken together, our findings suggest that the novel K+ channel represents a different ‘mode’ of the classical inward rectifier channel in which opening occurs only at very negative potentials. PMID:11897847

A Power-Efficient Wireless System With Adaptive Supply Control for Deep Brain Stimulation.

PubMed

Lee, Hyung-Min; Park, Hangue; Ghovanloo, Maysam

2013-09-01

A power-efficient wireless stimulating system for a head-mounted deep brain stimulator (DBS) is presented. A new adaptive rectifier generates a variable DC supply voltage from a constant AC power carrier utilizing phase control feedback, while achieving high AC-DC power conversion efficiency (PCE) through active synchronous switching. A current-controlled stimulator adopts closed-loop supply control to automatically adjust the stimulation compliance voltage by detecting stimulation site potentials through a voltage readout channel, and improve the stimulation efficiency. The stimulator also utilizes closed-loop active charge balancing to maintain the residual charge at each site within a safe limit, while receiving the stimulation parameters wirelessly from the amplitude-shift-keyed power carrier. A 4-ch wireless stimulating system prototype was fabricated in a 0.5-μm 3M2P standard CMOS process, occupying 2.25 mm². With 5 V peak AC input at 2 MHz, the adaptive rectifier provides an adjustable DC output between 2.5 V and 4.6 V at 2.8 mA loading, resulting in measured PCE of 72 ~ 87%. The adaptive supply control increases the stimulation efficiency up to 30% higher than a fixed supply voltage to 58 ~ 68%. The prototype wireless stimulating system was verified in vitro .

A Power-Efficient Wireless System With Adaptive Supply Control for Deep Brain Stimulation

PubMed Central

Lee, Hyung-Min; Park, Hangue; Ghovanloo, Maysam

2014-01-01

A power-efficient wireless stimulating system for a head-mounted deep brain stimulator (DBS) is presented. A new adaptive rectifier generates a variable DC supply voltage from a constant AC power carrier utilizing phase control feedback, while achieving high AC-DC power conversion efficiency (PCE) through active synchronous switching. A current-controlled stimulator adopts closed-loop supply control to automatically adjust the stimulation compliance voltage by detecting stimulation site potentials through a voltage readout channel, and improve the stimulation efficiency. The stimulator also utilizes closed-loop active charge balancing to maintain the residual charge at each site within a safe limit, while receiving the stimulation parameters wirelessly from the amplitude-shift-keyed power carrier. A 4-ch wireless stimulating system prototype was fabricated in a 0.5-μm 3M2P standard CMOS process, occupying 2.25 mm². With 5 V peak AC input at 2 MHz, the adaptive rectifier provides an adjustable DC output between 2.5 V and 4.6 V at 2.8 mA loading, resulting in measured PCE of 72 ~ 87%. The adaptive supply control increases the stimulation efficiency up to 30% higher than a fixed supply voltage to 58 ~ 68%. The prototype wireless stimulating system was verified in vitro. PMID:24678126

Modeling, Development and Control of Multilevel Converters for Power System Application =

NASA Astrophysics Data System (ADS)

Vahedi, Hani

The main goal of this project is to develop a multilevel converter topology to be useful in power system applications. Although many topologies are introduced rapidly using a bunch of switches and isolated dc sources, having a single-dc-source multilevel inverter is still a matter of controversy. In fact, each isolated dc source means a bulky transformer and a rectifier that have their own losses and costs forcing the industries to avoid entering in this topic conveniently. On the other hand, multilevel inverters topologies with single-dc-source require associated controllers to regulate the dc capacitors voltages in order to have multilevel voltage waveform at the output. Thus, a complex controller would not interest investors properly. Consequently, developing a single-dc-source multilevel inverter topology along with a light and reliable voltage control is still a challenging topic to replace the 2-level inverters in the market effectively. The first effort in this project was devoted to the PUC7 inverter to design a simple and yet efficient controller. A new modelling is performed on the PUC7 inverter and it has been simplified to first order system. Afterwards, a nonlinear cascaded controller is designed and applied to regulate the capacitor voltage at 1/3 of the DC source amplitude and to generate 7 identical voltage levels at the output supplying different type of loads such as RL or rectifier harmonic ones. In next work, the PUC5 topology is proposed as a remedy to the PUC7 that requires a complicated controller to operate properly. The capacitor voltage is regulated at half of dc source amplitude to generate 5 voltage levels at the output. Although the 7-level voltage waveform is replaced by a 5-level one in PUC5 topology, it is shown that the PUC5 needs a very simple and reliable voltage balancing technique due to having some redundant switching states. Moreover, a sensor-less voltage balancing technique is designed and implemented on the PUC5 inverter successfully to work in both stand-alone and gridconnected mode of operation. Eventually, a modified configuration of the PUC5 topology is presented to work as a buck PFC rectifier. The internal performance of the rectifier is like a buck converter to generate stepped down DC voltages at the two output terminals while the grid sees a boost converter externally. As well, a decoupled voltage/current controller is designed and applied to balance the output voltages identically and synchronize the input current with grid voltage to have a PFC operation acceptably. A power balance analysis is done to show the load variation range limit. All the theoretical and simulation studies are validated by experimental results completely.

An overview of self-switching diode rectifiers using green materials

NASA Astrophysics Data System (ADS)

Kasjoo, Shahrir Rizal; Zailan, Zarimawaty; Zakaria, Nor Farhani; Isa, Muammar Mohamad; Arshad, Mohd Khairuddin Md; Taking, Sanna

2017-09-01

A unipolar two-terminal nanodevice, known as the self-switching diode (SSD), has recently been demonstrated as a room-temperature rectifier at microwave and terahertz frequencies due to its nonlinear current-voltage characteristic. The planar architecture of SSD not only makes the fabrication process of the device faster, simpler and at a lower cost when compared with other rectifying diodes, but also allows the use of various materials to realize and fabricate SSDs. This includes the utilization of `green' materials such as organic and graphene thin films for environmental sustainability. This paper reviews the properties of current `green' SSD rectifiers with respect to their operating frequencies and rectifying performances, including responsivity and noise-equivalent power of the devices, along with the applications.

Impedance Matching Antenna-Integrated High-Efficiency Energy Harvesting Circuit

PubMed Central

Shinki, Yuharu; Shibata, Kyohei; Mansour, Mohamed

2017-01-01

This paper describes the design of a high-efficiency energy harvesting circuit with an integrated antenna. The circuit is composed of series resonance and boost rectifier circuits for converting radio frequency power into boosted direct current (DC) voltage. The measured output DC voltage is 5.67 V for an input of 100 mV at 900 MHz. Antenna input impedance matching is optimized for greater efficiency and miniaturization. The measured efficiency of this antenna-integrated energy harvester is 60% for −4.85 dBm input power and a load resistance equal to 20 kΩ at 905 MHz. PMID:28763043

Impedance Matching Antenna-Integrated High-Efficiency Energy Harvesting Circuit.

PubMed

Shinki, Yuharu; Shibata, Kyohei; Mansour, Mohamed; Kanaya, Haruichi

2017-08-01

This paper describes the design of a high-efficiency energy harvesting circuit with an integrated antenna. The circuit is composed of series resonance and boost rectifier circuits for converting radio frequency power into boosted direct current (DC) voltage. The measured output DC voltage is 5.67 V for an input of 100 mV at 900 MHz. Antenna input impedance matching is optimized for greater efficiency and miniaturization. The measured efficiency of this antenna-integrated energy harvester is 60% for -4.85 dBm input power and a load resistance equal to 20 kΩ at 905 MHz.

Design and implementation of a RF powering circuit for RFID tags or other batteryless embedded devices.

PubMed

Liu, Dongsheng; Wang, Rencai; Yao, Ke; Zou, Xuecheng; Guo, Liang

2014-08-13

A RF powering circuit used in radio-frequency identification (RFID) tags and other batteryless embedded devices is presented in this paper. The RF powering circuit harvests energy from electromagnetic waves and converts the RF energy to a stable voltage source. Analysis of a NMOS gate-cross connected bridge rectifier is conducted to demonstrate relationship between device sizes and power conversion efficiency (PCE) of the rectifier. A rectifier with 38.54% PCE under normal working conditions is designed. Moreover, a stable voltage regulator with a temperature and voltage optimizing strategy including adoption of a combination resistor is developed, which is able to accommodate a large input range of 4 V to 12 V and be immune to temperature variations. Latch-up prevention and noise isolation methods in layout design are also presented. Designed with the HJTC 0.25 μm process, this regulator achieves 0.04 mV/°C temperature rejection ratio (TRR) and 2.5 mV/V voltage rejection ratio (VRR). The RF powering circuit is also fabricated in the HJTC 0.25 μm process. The area of the RF powering circuit is 0.23 × 0.24 mm². The RF powering circuit is successfully integrated with ISO/IEC 15693-compatible and ISO/IEC 14443-compatible RFID tag chips.

Design and Implementation of a RF Powering Circuit for RFID Tags or Other Batteryless Embedded Devices

PubMed Central

Liu, Dongsheng; Wang, Rencai; Yao, Ke; Zou, Xuecheng; Guo, Liang

2014-01-01

A RF powering circuit used in radio-frequency identification (RFID) tags and other batteryless embedded devices is presented in this paper. The RF powering circuit harvests energy from electromagnetic waves and converts the RF energy to a stable voltage source. Analysis of a NMOS gate-cross connected bridge rectifier is conducted to demonstrate relationship between device sizes and power conversion efficiency (PCE) of the rectifier. A rectifier with 38.54% PCE under normal working conditions is designed. Moreover, a stable voltage regulator with a temperature and voltage optimizing strategy including adoption of a combination resistor is developed, which is able to accommodate a large input range of 4 V to 12 V and be immune to temperature variations. Latch-up prevention and noise isolation methods in layout design are also presented. Designed with the HJTC 0.25 μm process, this regulator achieves 0.04 mV/°C temperature rejection ratio (TRR) and 2.5 mV/V voltage rejection ratio (VRR). The RF powering circuit is also fabricated in the HJTC 0.25 μm process. The area of the RF powering circuit is 0.23 × 0.24 mm2. The RF powering circuit is successfully integrated with ISO/IEC 15693-compatible and ISO/IEC 14443-compatible RFID tag chips. PMID:25123466

Simulation and Analysis of Three-Phase Rectifiers for Aerospace Power Applications

NASA Technical Reports Server (NTRS)

Truong, Long V.; Birchenough, Arthur G.

2004-01-01

Due to the nature of planned planetary missions, fairly large advanced power systems are required for the spacecraft. These future high power spacecrafts are expected to use dynamic power conversion systems incorporating high speed alternators as three-phase AC electrical power source. One of the early design considerations in such systems is the type of rectification to be used with the AC source for DC user loads. This paper address the issues involved with two different rectification methods, namely the conventional six and twelve pulses. Two circuit configurations which involved parallel combinations of the six and twelve-pulse rectifiers were selected for the simulation. The rectifier s input and output power waveforms will be thoroughly examined through simulations. The effects of the parasitic load for power balancing and filter components for reducing the ripple voltage at the DC loads are also included in the analysis. Details of the simulation circuits, simulation results, and design examples for reducing risk from damaging of spacecraft engines will be presented and discussed.

Fabrication and characterization of the organic rectifying junctions by electrolysis

NASA Astrophysics Data System (ADS)

Karimov, Khasan; Ahmad, Zubair; Ali, Rashid; Noor, Adnan; Akmal, M.; Najeeb, M. A.; Shakoor, R. A.

2017-08-01

Unlike the conventional solution processable deposition techniques, in this study, we propose a novel and economical method for the fabrication of organic rectifying junctions. The solutions of the orange dye, copper phthalocyanine and NaCl were deposited on the surface-type interdigitated silver electrodes using electrolysis technique. Using the current-voltage (I-V) characteristics, the presence of rectifying behavior in the samples has been confirmed. This phenomenon, in principle, can be used for fabrication of the diodes, transistors and memory devices.

Flutter Generator Control and Force Computer.

DTIC Science & Technology

1985-07-01

exciter module 2. Mechanical load 3. Rectifier and triac 4. Overall system 5. Velocity control 6. Microprocessor 7. Operation in 1 ’g’ environment 8...amplifier Output voltage from the rectifier/ triac circuit (figure 3) is a function of the conduction angle of each triac . In a 400 Hz 3-phase system...3IIGCICI FIRING CIRCUIT FIRING CIRCUIT TO MOTOR Figure 3. Rectifier and triac _____ -=low AEL-0242-TNI Figure 4 DEMAND(V V49 -9 APIFE M O T OR

Quantitative analysis of the Ca2+ -dependent regulation of delayed rectifier K+ current IKs in rabbit ventricular myocytes.

PubMed

Bartos, Daniel C; Morotti, Stefano; Ginsburg, Kenneth S; Grandi, Eleonora; Bers, Donald M

2017-04-01

[Ca 2+ ] i enhanced rabbit ventricular slowly activating delayed rectifier K + current (I Ks ) by negatively shifting the voltage dependence of activation and slowing deactivation, similar to perfusion of isoproterenol. Rabbit ventricular rapidly activating delayed rectifier K + current (I Kr ) amplitude and voltage dependence were unaffected by high [Ca 2+ ] i . When measuring or simulating I Ks during an action potential, I Ks was not different during a physiological Ca 2+ transient or when [Ca 2+ ] i was buffered to 500 nm. The slowly activating delayed rectifier K + current (I Ks ) contributes to repolarization of the cardiac action potential (AP). Intracellular Ca 2+ ([Ca 2+ ] i ) and β-adrenergic receptor (β-AR) stimulation modulate I Ks amplitude and kinetics, but details of these important I Ks regulators and their interaction are limited. We assessed the [Ca 2+ ] i dependence of I Ks in steady-state conditions and with dynamically changing membrane potential and [Ca 2+ ] i during an AP. I Ks was recorded from freshly isolated rabbit ventricular myocytes using whole-cell patch clamp. With intracellular pipette solutions that controlled free [Ca 2+ ] i , we found that raising [Ca 2+ ] i from 100 to 600 nm produced similar increases in I Ks as did β-AR activation, and the effects appeared additive. Both β-AR activation and high [Ca 2+ ] i increased maximally activated tail I Ks , negatively shifted the voltage dependence of activation, and slowed deactivation kinetics. These data informed changes in our well-established mathematical model of the rabbit myocyte. In both AP-clamp experiments and simulations, I Ks recorded during a normal physiological Ca 2+ transient was similar to I Ks measured with [Ca 2+ ] i clamped at 500-600 nm. Thus, our study provides novel quantitative data as to how physiological [Ca 2+ ] i regulates I Ks amplitude and kinetics during the normal rabbit AP. Our results suggest that micromolar [Ca 2+ ] i , in the submembrane or junctional cleft space, is not required to maximize [Ca 2+ ] i -dependent I Ks activation during normal Ca 2+ transients. © 2016 The Authors. The Journal of Physiology © 2016 The Physiological Society.

Quantitative analysis of the Ca2+‐dependent regulation of delayed rectifier K+ current I Ks in rabbit ventricular myocytes

PubMed Central

Bartos, Daniel C.; Morotti, Stefano; Ginsburg, Kenneth S.; Grandi, Eleonora

2017-01-01

Key points [Ca2+]i enhanced rabbit ventricular slowly activating delayed rectifier K+ current (I Ks) by negatively shifting the voltage dependence of activation and slowing deactivation, similar to perfusion of isoproterenol.Rabbit ventricular rapidly activating delayed rectifier K+ current (I Kr) amplitude and voltage dependence were unaffected by high [Ca2+]i.When measuring or simulating I Ks during an action potential, I Ks was not different during a physiological Ca2+ transient or when [Ca2+]i was buffered to 500 nm. Abstract The slowly activating delayed rectifier K+ current (I Ks) contributes to repolarization of the cardiac action potential (AP). Intracellular Ca2+ ([Ca2+]i) and β‐adrenergic receptor (β‐AR) stimulation modulate I Ks amplitude and kinetics, but details of these important I Ks regulators and their interaction are limited. We assessed the [Ca2+]i dependence of I Ks in steady‐state conditions and with dynamically changing membrane potential and [Ca2+]i during an AP. I Ks was recorded from freshly isolated rabbit ventricular myocytes using whole‐cell patch clamp. With intracellular pipette solutions that controlled free [Ca2+]i, we found that raising [Ca2+]i from 100 to 600 nm produced similar increases in I Ks as did β‐AR activation, and the effects appeared additive. Both β‐AR activation and high [Ca2+]i increased maximally activated tail I Ks, negatively shifted the voltage dependence of activation, and slowed deactivation kinetics. These data informed changes in our well‐established mathematical model of the rabbit myocyte. In both AP‐clamp experiments and simulations, I Ks recorded during a normal physiological Ca2+ transient was similar to I Ks measured with [Ca2+]i clamped at 500–600 nm. Thus, our study provides novel quantitative data as to how physiological [Ca2+]i regulates I Ks amplitude and kinetics during the normal rabbit AP. Our results suggest that micromolar [Ca2+]i, in the submembrane or junctional cleft space, is not required to maximize [Ca2+]i‐dependent I Ks activation during normal Ca2+ transients. PMID:28008618

Solid state circuit controls direction, speed, and braking of dc motor

NASA Technical Reports Server (NTRS)

Hanna, M. F.

1966-01-01

Full-wave bridge rectifier circuit controls the direction, speed, and braking of a dc motor. Gating in the circuit of Silicon Controlled Rectifiers /SCRS/ controls output polarity and braking is provided by an SCR that is gated to short circuit the reverse voltage generated by reversal of motor rotation.

Power Conditioning for MEMS-Based Waste Vibrational Energy Harvester

DTIC Science & Technology

2015-06-01

circuits ...........................................................................................18 Figure 18. Full-wave passive MOSFET rectifier...ABBREVIATIONS AC Alternative Current AlN Aluminum Nitride DC Direct Current LIA Lock-In Amplifier MEMS Microelectromechanical Systems MOSFET ...efficiency is achieved when input voltage is over 2–3 V [14]. Using metal-oxide-semiconductor field-effect transistors ( MOSFETs ) in a rectifier instead of

Reconfigurable Resonant Regulating Rectifier With Primary Equalization for Extended Coupling- and Loading-Range in Bio-Implant Wireless Power Transfer.

PubMed

Li, Xing; Meng, Xiaodong; Tsui, Chi-Ying; Ki, Wing-Hung

2015-12-01

Wireless power transfer using reconfigurable resonant regulating (R(3)) rectification suffers from limited range in accommodating varying coupling and loading conditions. A primary-assisted regulation principle is proposed to mitigate these limitations, of which the amplitude of the rectifier input voltage on the secondary side is regulated by accordingly adjusting the voltage amplitude Veq on the primary side. A novel current-sensing method and calibration scheme track Veq on the primary side. A ramp generator simultaneously provides three clock signals for different modules. Both the primary equalizer and the R(3) rectifier are implemented as custom integrated circuits fabricated in a 0.35 μm CMOS process, with the global control implemented in FPGA. Measurements show that with the primary equalizer, the workable coupling and loading ranges are extended by 250% at 120 mW load and 300% at 1.2 cm coil distance compared to the same system without the primary equalizer. A maximum rectifier efficiency of 92.5% and a total system efficiency of 62.4% are demonstrated.

Multi-service highly sensitive rectifier for enhanced RF energy scavenging.

PubMed

Shariati, Negin; Rowe, Wayne S T; Scott, James R; Ghorbani, Kamran

2015-05-07

Due to the growing implications of energy costs and carbon footprints, the need to adopt inexpensive, green energy harvesting strategies are of paramount importance for the long-term conservation of the environment and the global economy. To address this, the feasibility of harvesting low power density ambient RF energy simultaneously from multiple sources is examined. A high efficiency multi-resonant rectifier is proposed, which operates at two frequency bands (478-496 and 852-869 MHz) and exhibits favorable impedance matching over a broad input power range (-40 to -10 dBm). Simulation and experimental results of input reflection coefficient and rectified output power are in excellent agreement, demonstrating the usefulness of this innovative low-power rectification technique. Measurement results indicate an effective efficiency of 54.3%, and an output DC voltage of 772.8 mV is achieved for a multi-tone input power of -10 dBm. Furthermore, the measured output DC power from harvesting RF energy from multiple services concurrently exhibits a 3.14 and 7.24 fold increase over single frequency rectification at 490 and 860 MHz respectively. Therefore, the proposed multi-service highly sensitive rectifier is a promising technique for providing a sustainable energy source for low power applications in urban environments.

Multi-Service Highly Sensitive Rectifier for Enhanced RF Energy Scavenging

PubMed Central

Shariati, Negin; Rowe, Wayne S. T.; Scott, James R.; Ghorbani, Kamran

2015-01-01

Due to the growing implications of energy costs and carbon footprints, the need to adopt inexpensive, green energy harvesting strategies are of paramount importance for the long-term conservation of the environment and the global economy. To address this, the feasibility of harvesting low power density ambient RF energy simultaneously from multiple sources is examined. A high efficiency multi-resonant rectifier is proposed, which operates at two frequency bands (478–496 and 852–869 MHz) and exhibits favorable impedance matching over a broad input power range (−40 to −10 dBm). Simulation and experimental results of input reflection coefficient and rectified output power are in excellent agreement, demonstrating the usefulness of this innovative low-power rectification technique. Measurement results indicate an effective efficiency of 54.3%, and an output DC voltage of 772.8 mV is achieved for a multi-tone input power of −10 dBm. Furthermore, the measured output DC power from harvesting RF energy from multiple services concurrently exhibits a 3.14 and 7.24 fold increase over single frequency rectification at 490 and 860 MHz respectively. Therefore, the proposed multi-service highly sensitive rectifier is a promising technique for providing a sustainable energy source for low power applications in urban environments. PMID:25951137

Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use

DOEpatents

Welch, James D.

2000-01-01

Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

ESD robustness improving for the low-voltage triggering silicon-controlled rectifier by adding NWell at cathode

NASA Astrophysics Data System (ADS)

Jin, Xiangliang; Zheng, Yifei; Wang, Yang; Guan, Jian; Hao, Shanwan; Li, Kan; Luo, Jun

2018-01-01

The low-voltage triggering silicon-controlled rectifier (LVTSCR) device is widely used in on-chip electrostatic discharge (ESD) protection owing to its low trigger voltage and strong current-tolerating capability per area. In this paper, an improved LVTSCR by adding a narrow NWell (NW2) under the source region of NMOS is discussed, which is realized in a 0.5-μm CMOS process. A 2-dimension (2D) device simulation platform and a transmission line pulse (TLP) testing system are used to predict and characterize the proposed ESD protection devices. According to the measurement results, compared with the preliminary LVTSCR, the improved LVTSCR elevates the second breakdown current (It2) from 2.39 A to 5.54 A and increases the holding voltage (Vh) from 3.04 V to 4.09 V without expanding device area or sacrificing any ESD performances. Furthermore, the influence of the size of the narrow NWell under the source region of NMOS on holding voltage is also discussed.

Kir2.1 encodes the inward rectifier potassium channel in rat arterial smooth muscle cells

PubMed Central

Bradley, Karri K; Jaggar, Jonathan H; Bonev, Adrian D; Heppner, Thomas J; Flynn, Elaine RM; Nelson, Mark T; Horowitz, Burton

1999-01-01

The molecular nature of the strong inward rectifier K+ channel in vascular smooth muscle was explored by using isolated cell RT-PCR, cDNA cloning and expression techniques.RT-PCR of RNA from single smooth muscle cells of rat cerebral (basilar), coronary and mesenteric arteries revealed transcripts for Kir2.1. Transcripts for Kir2.2 and Kir2.3 were not found.Quantitative PCR analysis revealed significant differences in transcript levels of Kir2.1 between the different vascular preparations (n = 3; P < 0.05). A two-fold difference was detected between Kir2.1 mRNA and β-actin mRNA in coronary arteries when compared with relative levels measured in mesenteric and basilar preparations.Kir2.1 was cloned from rat mesenteric vascular smooth muscle cells and expressed in Xenopus oocytes. Currents were strongly inwardly rectifying and selective for K+.The effect of extracellular Ba2+, Ca2+, Mg2+ and Cs2+ ions on cloned Kir2.1 channels expressed in Xenopus oocytes was examined. Ba2+ and Cs+ block were steeply voltage dependent, whereas block by external Ca2+ and Mg2+ exhibited little voltage dependence. The apparent half-block constants and voltage dependences for Ba2+, Cs+, Ca2+ and Mg2+ were very similar for inward rectifier K+ currents from native cells and cloned Kir2.1 channels expressed in oocytes.Molecular studies demonstrate that Kir2.1 is the only member of the Kir2 channel subfamily present in vascular arterial smooth muscle cells. Expression of cloned Kir2.1 in Xenopus oocytes resulted in inward rectifier K+ currents that strongly resemble those that are observed in native vascular arterial smooth muscle cells. We conclude that Kir2.1 encodes for inward rectifier K+ channels in arterial smooth muscle. PMID:10066894

Accelerating fissile material detection with a neutron source

DOEpatents

Rowland, Mark S.; Snyderman, Neal J.

2018-01-30

A neutron detector system for discriminating fissile material from non-fissile material wherein a digital data acquisition unit collects data at high rate, and in real-time processes large volumes of data directly to count neutrons from the unknown source and detecting excess grouped neutrons to identify fission in the unknown source. The system includes a Poisson neutron generator for in-beam interrogation of a possible fissile neutron source and a DC power supply that exhibits electrical ripple on the order of less than one part per million. Certain voltage multiplier circuits, such as Cockroft-Walton voltage multipliers, are used to enhance the effective of series resistor-inductor circuits components to reduce the ripple associated with traditional AC rectified, high voltage DC power supplies.

A CMOS Pressure Sensor Tag Chip for Passive Wireless Applications

PubMed Central

Deng, Fangming; He, Yigang; Li, Bing; Zuo, Lei; Wu, Xiang; Fu, Zhihui

2015-01-01

This paper presents a novel monolithic pressure sensor tag for passive wireless applications. The proposed pressure sensor tag is based on an ultra-high frequency RFID system. The pressure sensor element is implemented in the 0.18 µm CMOS process and the membrane gap is formed by sacrificial layer release, resulting in a sensitivity of 1.2 fF/kPa within the range from 0 to 600 kPa. A three-stage rectifier adopts a chain of auxiliary floating rectifier cells to boost the gate voltage of the switching transistors, resulting in a power conversion efficiency of 53% at the low input power of −20 dBm. The capacitive sensor interface, using phase-locked loop archietcture, employs fully-digital blocks, which results in a 7.4 bits resolution and 0.8 µW power dissipation at 0.8 V supply voltage. The proposed passive wireless pressure sensor tag costs a total 3.2 µW power dissipation. PMID:25806868

A CMOS pressure sensor tag chip for passive wireless applications.

PubMed

Deng, Fangming; He, Yigang; Li, Bing; Zuo, Lei; Wu, Xiang; Fu, Zhihui

2015-03-23

This paper presents a novel monolithic pressure sensor tag for passive wireless applications. The proposed pressure sensor tag is based on an ultra-high frequency RFID system. The pressure sensor element is implemented in the 0.18 µm CMOS process and the membrane gap is formed by sacrificial layer release, resulting in a sensitivity of 1.2 fF/kPa within the range from 0 to 600 kPa. A three-stage rectifier adopts a chain of auxiliary floating rectifier cells to boost the gate voltage of the switching transistors, resulting in a power conversion efficiency of 53% at the low input power of -20 dBm. The capacitive sensor interface, using phase-locked loop archietcture, employs fully-digital blocks, which results in a 7.4 bits resolution and 0.8 µW power dissipation at 0.8 V supply voltage. The proposed passive wireless pressure sensor tag costs a total 3.2 µW power dissipation.

A Passive EMI Filter with Access to the Ungrounded Motor Neutral Line-The Case that a General-Purpose Inverter is Directly Connected to a Three-Phase Grounded Voltage Source-

NASA Astrophysics Data System (ADS)

Doumoto, Takafumi; Akagi, Hirofumi

This paper proposes a small-sized passive EMI filter for the purpose of eliminating high-frequency shaft voltage and ground leakage current from an ac motor. The motor is driven by a general-purpose PWM inverter connected to a three-phase grounded voltage source. The passive EMI filter requires access to the ungrounded neutral point of the motor. This unique circuit configuration makes the common-mode inductor effective in reducing the high-frequency common-mode voltage generated by the PWM inverter with a carrier frequency of 15kHz. As a result, both high-frequency shaft voltage and ground leakage current can be eliminated very efficiently. However, the common-mode inductor may not play any role in reducing the low-frequency common-mode voltage generated by the diode rectifier, so that a low-frequency component still remains in the shaft voltage. Such a low-frequency shaft voltage may not produce any bad effect on motor bearings. The validity and effectiveness of the EMI filter is verified by experimental results obtained from a 200-V 5-kVA laboratory system.

Solid state safety jumper cables

DOEpatents

Kronberg, James W.

1993-01-01

Solid state jumper cables for connecting two batteries in parallel, having two bridge rectifiers for developing a reference voltage, a four-input decoder for determining which terminals are to be connected based on a comparison of the voltage at each of the four terminals to the reference voltage, and a pair of relays for effecting the correct connection depending on the determination of the decoder. No connection will be made unless only one terminal of each battery has a higher voltage than the reference voltage, indicating "positive" terminals, and one has a lower voltage than the reference voltage, indicating "negative" terminals, and that, therefore, the two high voltage terminals may be connected and the two lower voltage terminals may be connected. Current flows once the appropriate relay device is closed. The relay device is preferably a MOSFET (metal oxide semiconductor field effect transistor) combined with a series array of photodiodes that develop MOSFET gate-closing potential when the decoder output causes an LED to light.

Solid state safety jumper cables

DOEpatents

Kronberg, J.W.

1993-02-23

Solid state jumper cables for connecting two batteries in parallel, having two bridge rectifiers for developing a reference voltage, a four-input decoder for determining which terminals are to be connected based on a comparison of the voltage at each of the four terminals to the reference voltage, and a pair of relays for effecting the correct connection depending on the determination of the decoder. No connection will be made unless only one terminal of each battery has a higher voltage than the reference voltage, indicating positive'' terminals, and one has a lower voltage than the reference voltage, indicating negative'' terminals, and that, therefore, the two high voltage terminals may be connected and the two lower voltage terminals may be connected. Current flows once the appropriate relay device is closed. The relay device is preferably a MOSFET (metal oxide semiconductor field effect transistor) combined with a series array of photodiodes that develop MOSFET gate-closing potential when the decoder output causes an LED to light.

A new pH-sensitive rectifying potassium channel in mitochondria from the embryonic rat hippocampus.

PubMed

Kajma, Anna; Szewczyk, Adam

2012-10-01

Patch-clamp single-channel studies on mitochondria isolated from embryonic rat hippocampus revealed the presence of two different potassium ion channels: a large-conductance (288±4pS) calcium-activated potassium channel and second potassium channel with outwardly rectifying activity under symmetric conditions (150/150mM KCl). At positive voltages, this channel displayed a conductance of 67.84pS and a strong voltage dependence at holding potentials from -80mV to +80mV. The open probability was higher at positive than at negative voltages. Patch-clamp studies at the mitoplast-attached mode showed that the channel was not sensitive to activators and inhibitors of mitochondrial potassium channels but was regulated by pH. Moreover, we demonstrated that the channel activity was not affected by the application of lidocaine, an inhibitor of two-pore domain potassium channels, or by tertiapin, an inhibitor of inwardly rectifying potassium channels. In summary, based on the single-channel recordings, we characterised for the first time mitochondrial pH-sensitive ion channel that is selective for cations, permeable to potassium ions, displays voltage sensitivity and does not correspond to any previously described potassium ion channels in the inner mitochondrial membrane. This article is part of a Special Issue entitled: 17th European Bioenergetics Conference (EBEC 2012). Copyright © 2012 Elsevier B.V. All rights reserved.

Utilizing zero-sequence switchings for reversible converters

DOEpatents

Hsu, John S.; Su, Gui-Jia; Adams, Donald J.; Nagashima, James M.; Stancu, Constantin; Carlson, Douglas S.; Smith, Gregory S.

2004-12-14

A method for providing additional dc inputs or outputs (49, 59) from a dc-to-ac inverter (10) for controlling motor loads (60) comprises deriving zero-sequence components (V.sub.ao, V.sub.bo, and V.sub.co) from the inverter (10) through additional circuit branches with power switching devices (23, 44, 46), transforming the voltage between a high voltage and a low voltage using a transformer or motor (42, 50), converting the low voltage between ac and dc using a rectifier (41, 51) or an H-bridge (61), and providing at least one low voltage dc input or output (49, 59). The transformation of the ac voltage may be either single phase or three phase. Where less than a 100% duty cycle is acceptable, a two-phase modulation of the switching signals controlling the inverter (10) reduces switching losses in the inverter (10). A plurality of circuits for carrying out the invention are also disclosed.

Molecular Coupling between Voltage Sensor and Pore Opening in the Arabidopsis Inward Rectifier K+ Channel KAT1

PubMed Central

Latorre, Ramon; Olcese, Riccardo; Basso, Claudia; Gonzalez, Carlos; Muñoz, Fabian; Cosmelli, Diego; Alvarez, Osvaldo

2003-01-01

Animal and plant voltage-gated ion channels share a common architecture. They are made up of four subunits and the positive charges on helical S4 segments of the protein in animal K+ channels are the main voltage-sensing elements. The KAT1 channel cloned from Arabidopsis thaliana, despite its structural similarity to animal outward rectifier K+ channels is, however, an inward rectifier. Here we detected KAT1-gating currents due to the existence of an intrinsic voltage sensor in this channel. The measured gating currents evoked in response to hyperpolarizing voltage steps consist of a very fast (τ = 318 ± 34 μs at −180 mV) and a slower component (4.5 ± 0.5 ms at −180 mV) representing charge moved when most channels are closed. The observed gating currents precede in time the ionic currents and they are measurable at voltages (less than or equal to −60) at which the channel open probability is negligible (≈10−4). These two observations, together with the fact that there is a delay in the onset of the ionic currents, indicate that gating charge transits between several closed states before the KAT1 channel opens. To gain insight into the molecular mechanisms that give rise to the gating currents and lead to channel opening, we probed external accessibility of S4 domain residues to methanethiosulfonate-ethyltrimethylammonium (MTSET) in both closed and open cysteine-substituted KAT1 channels. The results demonstrate that the putative voltage–sensing charges of S4 move inward when the KAT1 channels open. PMID:14517271

Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

DOEpatents

Carlson, David E.

1980-01-01

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

Solid-state transformer-based new traction drive system and control

NASA Astrophysics Data System (ADS)

Feng, Jianghua; Shang, Jing; Zhang, Zhixue; Liu, Huadong; Huang, Zihao

2017-11-01

A new type of traction drive system consisting of solid-state traction transformer (SSTT), inverter unit, auxiliary inverter, traction motor and other key components is built in order to suit the demand of developing the next-generation electric traction system which will be efficient and lightweight, with high power density. For the purpose of reducing system volume and weight and improving efficiency and grid-side power quality, an efficient SSTT optimized topology combining high-voltage cascaded rectifiers with high-power high-frequency LLC resonant converter is proposed. On this basis, an integrated control strategy built upon synchronous rotating reference frame is presented to achieve unified control over fundamental active, reactive and harmonic components. The carrier-interleaving phase shift modulation strategy is proposed to improve the harmonic performance of cascaded rectifiers. In view of the secondary pulsating existing in a single-phase system, the mathematical model of secondary power transfer is built, and the mechanism of pulsating voltage resulting in beat frequency of LLC resonant converter is revealed, so as to design optimum matching of system parameters. Simulation and experimental results have verified that the traction system and control scheme mentioned in this paper are reasonable and superior and that they meet the future application requirements for rail transit.

A new type of accelerator power supply based on voltage-type space vector PWM rectification technology

NASA Astrophysics Data System (ADS)

Wu, Fengjun; Gao, Daqing; Shi, Chunfeng; Huang, Yuzhen; Cui, Yuan; Yan, Hongbin; Zhang, Huajian; Wang, Bin; Li, Xiaohui

2016-08-01

To solve the problems such as low input power factor, a large number of AC current harmonics and instable DC bus voltage due to the diode or thyristor rectifier used in an accelerator power supply, particularly in the Heavy Ion Research Facility in Lanzhou-Cooler Storage Ring (HIRFL-CSR), we designed and built up a new type of accelerator power supply prototype base on voltage-type space vector PWM (SVPWM) rectification technology. All the control strategies are developed in TMS320C28346, which is a digital signal processor from TI. The experimental results indicate that an accelerator power supply with a SVPWM rectifier can solve the problems above well, and the output performance such as stability, tracking error and ripple current meet the requirements of the design. The achievement of prototype confirms that applying voltage-type SVPWM rectification technology in an accelerator power supply is feasible; and it provides a good reference for design and build of this new type of power supply.

Vibration energy harvesting based on integrated piezoelectric components operating in different modes.

PubMed

Hu, Junhui; Jong, Januar; Zhao, Chunsheng

2010-01-01

To increase the vibration energy-harvesting capability of the piezoelectric generator based on a cantilever beam, we have proposed a piezoelectric generator that not only uses the strain change of piezoelectric components bonded on a cantilever beam, but also employs the weights at the tip of the cantilever beam to hit piezoelectric components located on the 2 sides of weights. A prototype of the piezoelectric generator has been fabricated and its characteristics have been measured and analyzed. The experimental results show that the piezoelectric components operating in the hit mode can substantially enhance the energy harvesting of the piezoelectric generator on a cantilever beam. Two methods are used and compared in the management of rectified output voltages from different groups of piezoelectric components. In one of them, the DC voltages from rectifiers are connected in series, and then the total DC voltage is applied to a capacitor. In another connection, the DC voltage from each group is applied to different capacitors. It is found that 22.3% of the harvested energy is wasted due to the series connection. The total output electric energy of our piezoelectric generator at nonresonance could be up to 43 nJ for one vibration excitation applied by spring, with initial vibration amplitude (0-p) of 18 mm and frequency of 18.5 Hz, when the rectified voltages from different groups of piezoelectric components are connected to their individual capacitors. In addition, the motion and impact of the weights at the tip of the cantilever beam are theoretically analyzed, which well explains the experimental phenomena and suggests the measures to improve the generator.

Analysis and Design of Bridgeless Switched Mode Power Supply for Computers

NASA Astrophysics Data System (ADS)

Singh, S.; Bhuvaneswari, G.; Singh, B.

2014-09-01

Switched mode power supplies (SMPSs) used in computers need multiple isolated and stiffly regulated output dc voltages with different current ratings. These isolated multiple output dc voltages are obtained by using a multi-winding high frequency transformer (HFT). A half-bridge dc-dc converter is used here for obtaining different isolated and well regulated dc voltages. In the front end, non-isolated Single Ended Primary Inductance Converters (SEPICs) are added to improve the power quality in terms of low input current harmonics and high power factor (PF). Two non-isolated SEPICs are connected in a way to completely eliminate the need of single-phase diode-bridge rectifier at the front end. Output dc voltages at both the non-isolated and isolated stages are controlled and regulated separately for power quality improvement. A voltage mode control approach is used in the non-isolated SEPIC stage for simple and effective control whereas average current control is used in the second isolated stage.

The delayed rectifier potassium conductance in the sarcolemma and the transverse tubular system membranes of mammalian skeletal muscle fibers

PubMed Central

DiFranco, Marino; Quinonez, Marbella

2012-01-01

A two-microelectrode voltage clamp and optical measurements of membrane potential changes at the transverse tubular system (TTS) were used to characterize delayed rectifier K currents (IKV) in murine muscle fibers stained with the potentiometric dye di-8-ANEPPS. In intact fibers, IKV displays the canonical hallmarks of KV channels: voltage-dependent delayed activation and decay in time. The voltage dependence of the peak conductance (gKV) was only accounted for by double Boltzmann fits, suggesting at least two channel contributions to IKV. Osmotically treated fibers showed significant disconnection of the TTS and displayed smaller IKV, but with similar voltage dependence and time decays to intact fibers. This suggests that inactivation may be responsible for most of the decay in IKV records. A two-channel model that faithfully simulates IKV records in osmotically treated fibers comprises a low threshold and steeply voltage-dependent channel (channel A), which contributes ∼31% of gKV, and a more abundant high threshold channel (channel B), with shallower voltage dependence. Significant expression of the IKV1.4 and IKV3.4 channels was demonstrated by immunoblotting. Rectangular depolarizing pulses elicited step-like di-8-ANEPPS transients in intact fibers rendered electrically passive. In contrast, activation of IKV resulted in time- and voltage-dependent attenuations in optical transients that coincided in time with the peaks of IKV records. Normalized peak attenuations showed the same voltage dependence as peak IKV plots. A radial cable model including channels A and B and K diffusion in the TTS was used to simulate IKV and average TTS voltage changes. Model predictions and experimental data were compared to determine what fraction of gKV in the TTS accounted simultaneously for the electrical and optical data. Best predictions suggest that KV channels are approximately equally distributed in the sarcolemma and TTS membranes; under these conditions, >70% of IKV arises from the TTS. PMID:22851675

Estimation of intrinsic and extrinsic capacitances of graphene self-switching diode using conformal mapping technique

NASA Astrophysics Data System (ADS)

Singh, Arun K.; Auton, Gregory; Hill, Ernie; Song, Aimin

2018-07-01

Due to a very high carrier concentration and low band gap, graphene based self-switching diodes do not demonstrate a very high rectification ratio. Despite that, it takes the advantage of graphene’s high carrier mobility and has been shown to work at very high microwave frequencies. However, the AC component of these devices is hidden in the very linear current–voltage characteristics. Here, we extract and quantitatively study the device capacitance that determines the device nonlinearity by implementing a conformal mapping technique. The estimated value of the nonlinear component or curvature coefficient from DC results based on Shichman–Hodges model predicts the rectified output voltage, which is in good agreement with the experimental RF results.

20 kA PFN capacitor bank with solid-state switching. [pulse forming network for plasma studies

NASA Technical Reports Server (NTRS)

Posta, S. J.; Michels, C. J.

1973-01-01

A compact high-current pulse-forming network capacitor bank using paralleled silicon controlled rectifiers as switches is described. The maximum charging voltage of the bank is 1kV and maximum load current is 20 kA. The necessary switch equalization criteria and performance with dummy load and an arc plasma generator are described.

A spin current rectifier

NASA Astrophysics Data System (ADS)

Eyni, Zahra; Mohammadpour, Hakimeh

2017-12-01

Current modulation and rectification is an important subject of electronics as well as spintronics. In this paper, an efficient rectifying mesoscopic device is introduced. The device is a two terminal device on the 2D plane of electron gas. The lateral contacts are half-metal ferromagnetic with antiparallel magnetizations and the central channel region is taken as ferromagnetic or normal in the presence of an applied magnetic field. The device functionality is based on the modification of spin-current by tuning the strength of the magnetic field or equivalently by the exchange coupling of the channel to the substrate. The result is that the (spin-) current depends on the polarity of the bias voltage. Converting an alternating bias voltage to direct current is the main achievement of this model device with an additional profit of rectified spin-current. We analyze the results in terms of the spin-dependent barrier in the channel. Detecting the strength of the magnetic field by spin polarization is also suggested.

The Application of Auto-Disturbance Rejection Control Optimized by Least Squares Support Vector Machines Method and Time-Frequency Representation in Voltage Source Converter-High Voltage Direct Current System.

PubMed

Liu, Ying-Pei; Liang, Hai-Ping; Gao, Zhong-Ke

2015-01-01

In order to improve the performance of voltage source converter-high voltage direct current (VSC-HVDC) system, we propose an improved auto-disturbance rejection control (ADRC) method based on least squares support vector machines (LSSVM) in the rectifier side. Firstly, we deduce the high frequency transient mathematical model of VSC-HVDC system. Then we investigate the ADRC and LSSVM principles. We ignore the tracking differentiator in the ADRC controller aiming to improve the system dynamic response speed. On this basis, we derive the mathematical model of ADRC controller optimized by LSSVM for direct current voltage loop. Finally we carry out simulations to verify the feasibility and effectiveness of our proposed control method. In addition, we employ the time-frequency representation methods, i.e., Wigner-Ville distribution (WVD) and adaptive optimal kernel (AOK) time-frequency representation, to demonstrate our proposed method performs better than the traditional method from the perspective of energy distribution in time and frequency plane.

The Application of Auto-Disturbance Rejection Control Optimized by Least Squares Support Vector Machines Method and Time-Frequency Representation in Voltage Source Converter-High Voltage Direct Current System

PubMed Central

Gao, Zhong-Ke

2015-01-01

In order to improve the performance of voltage source converter-high voltage direct current (VSC-HVDC) system, we propose an improved auto-disturbance rejection control (ADRC) method based on least squares support vector machines (LSSVM) in the rectifier side. Firstly, we deduce the high frequency transient mathematical model of VSC-HVDC system. Then we investigate the ADRC and LSSVM principles. We ignore the tracking differentiator in the ADRC controller aiming to improve the system dynamic response speed. On this basis, we derive the mathematical model of ADRC controller optimized by LSSVM for direct current voltage loop. Finally we carry out simulations to verify the feasibility and effectiveness of our proposed control method. In addition, we employ the time-frequency representation methods, i.e., Wigner-Ville distribution (WVD) and adaptive optimal kernel (AOK) time-frequency representation, to demonstrate our proposed method performs better than the traditional method from the perspective of energy distribution in time and frequency plane. PMID:26098556

Electronic Current Transducer (ECT) for high voltage dc lines

NASA Astrophysics Data System (ADS)

Houston, J. M.; Peters, P. H., Jr.; Summerayes, H. R., Jr.; Carlson, G. J.; Itani, A. M.

1980-02-01

The development of a bipolar electronic current transducer (ECT) for measuring the current in a high voltage dc (HVDC) power line at line potential is discussed. The design and construction of a free standing ECT for use on a 400 kV line having a nominal line current of 2000 A is described. Line current is measured by a 0.0001 ohm shunt whose voltage output is sampled by a 14 bit digital data link. The high voltage interface between line and ground is traversed by optical fibers which carry digital light signals as far as 300 m to a control room where the digital signal is converted back to an analog representation of the shunt voltage. Two redundant electronic and optical data links are used in the prototype. Power to operate digital and optical electronics and temperature controlling heaters at the line is supplied by a resistively and capacitively graded 10 stage cascade of ferrite core transformers located inside the hollow, SF6 filled, porcelain support insulator. The cascade is driven by a silicon controlled rectifier inverter which supplies about 100 W of power at 30 kHz.

A novel interface circuit for triboelectric nanogenerator

NASA Astrophysics Data System (ADS)

Yu, Wuqi; Ma, Jiahao; Zhang, Zhaohua; Ren, Tianling

2017-10-01

For most triboelectric nanogenerators (TENGs), the electric output should be a short AC pulse, which has the common characteristic of high voltage but low current. Thus it is necessary to convert the AC to DC and store the electric energy before driving conventional electronics. The traditional AC voltage regulator circuit which commonly consists of transformer, rectifier bridge, filter capacitor, and voltage regulator diode is not suitable for the TENG because the transformer’s consumption of power is appreciable if the TENG output is small. This article describes an innovative design of an interface circuit for a triboelectric nanogenerator that is transformerless and easily integrated. The circuit consists of large-capacity electrolytic capacitors that can realize to intermittently charge lithium-ion batteries and the control section contains the charging chip, the rectifying circuit, a comparator chip and switch chip. More important, the whole interface circuit is completely self-powered and self-controlled. Meanwhile, the chip is widely used in the circuit, so it is convenient to integrate into PCB. In short, this work presents a novel interface circuit for TENGs and makes progress to the practical application and industrialization of nanogenerators. Project supported by the National Natural Science Foundation of China (No. 61434001) and the ‘Thousands Talents’ Program for Pioneer Researchers and Its Innovation Team, China.

Hybrid high direct current circuit interrupter

DOEpatents

Rockot, Joseph H.; Mikesell, Harvey E.; Jha, Kamal N.

1998-01-01

A device and a method for interrupting very high direct currents (greater than 100,000 amperes) and simultaneously blocking high voltages (greater than 600 volts). The device utilizes a mechanical switch to carry very high currents continuously with low loss and a silicon controlled rectifier (SCR) to bypass the current around the mechanical switch while its contacts are separating. A commutation circuit, connected in parallel with the SCR, turns off the SCR by utilizing a resonant circuit to divert the SCR current after the switch opens.

A High Frequency Active Voltage Doubler in Standard CMOS Using Offset-Controlled Comparators for Inductive Power Transmission

PubMed Central

Lee, Hyung-Min; Ghovanloo, Maysam

2014-01-01

In this paper, we present a fully integrated active voltage doubler in CMOS technology using offset-controlled high speed comparators for extending the range of inductive power transmission to implantable microelectronic devices (IMD) and radio-frequency identification (RFID) tags. This active voltage doubler provides considerably higher power conversion efficiency (PCE) and lower dropout voltage compared to its passive counterpart and requires lower input voltage than active rectifiers, leading to reliable and efficient operation with weakly coupled inductive links. The offset-controlled functions in the comparators compensate for turn-on and turn-off delays to not only maximize the forward charging current to the load but also minimize the back current, optimizing PCE in the high frequency (HF) band. We fabricated the active voltage doubler in a 0.5-μm 3M2P std. CMOS process, occupying 0.144 mm2 of chip area. With 1.46 V peak AC input at 13.56 MHz, the active voltage doubler provides 2.4 V DC output across a 1 kΩ load, achieving the highest PCE = 79% ever reported at this frequency. In addition, the built-in start-up circuit ensures a reliable operation at lower voltages. PMID:23853321

Method and apparatus for controlling a microturbine

DOEpatents

Garces, Luis Jose; Cardinal, Mark Edward; Sinha, Gautam; Dame, Mark Edward

2005-08-02

An apparatus for controlling a microturbine, the apparatus including: a rectifier adapted for converting at least one generated voltage from the microturbine to a DC link voltage; an inverter adapted for converting the DC link voltage to at least one inverter output voltage, the at least one inverter output voltage being electrically coupled to an external power bus; a starter drive adapted for converting at least one starter input voltage to at least one starter output voltage, the at least one starter input voltage being electrically coupled to the external power bus, the at least one starter output voltage being electrically coupled to the microturbine.

Enhanced Passive RF-DC Converter Circuit Efficiency for Low RF Energy Harvesting

PubMed Central

Chaour, Issam; Fakhfakh, Ahmed; Kanoun, Olfa

2017-01-01

For radio frequency energy transmission, the conversion efficiency of the receiver is decisive not only for reducing sending power, but also for enabling energy transmission over long and variable distances. In this contribution, we present a passive RF-DC converter for energy harvesting at ultra-low input power at 868 MHz. The novel converter consists of a reactive matching circuit and a combined voltage multiplier and rectifier. The stored energy in the input inductor and capacitance, during the negative wave, is conveyed to the output capacitance during the positive one. Although Dickson and Villard topologies have principally comparable efficiency for multi-stage voltage multipliers, the Dickson topology reaches a better efficiency within the novel ultra-low input power converter concept. At the output stage, a low-pass filter is introduced to reduce ripple at high frequencies in order to realize a stable DC signal. The proposed rectifier enables harvesting energy at even a low input power from −40 dBm for a resistive load of 50 kΩ. It realizes a significant improvement in comparison with state of the art solutions. PMID:28282910

Enhanced Passive RF-DC Converter Circuit Efficiency for Low RF Energy Harvesting.

PubMed

Chaour, Issam; Fakhfakh, Ahmed; Kanoun, Olfa

2017-03-09

For radio frequency energy transmission, the conversion efficiency of the receiver is decisive not only for reducing sending power, but also for enabling energy transmission over long and variable distances. In this contribution, we present a passive RF-DC converter for energy harvesting at ultra-low input power at 868 MHz. The novel converter consists of a reactive matching circuit and a combined voltage multiplier and rectifier. The stored energy in the input inductor and capacitance, during the negative wave, is conveyed to the output capacitance during the positive one. Although Dickson and Villard topologies have principally comparable efficiency for multi-stage voltage multipliers, the Dickson topology reaches a better efficiency within the novel ultra-low input power converter concept. At the output stage, a low-pass filter is introduced to reduce ripple at high frequencies in order to realize a stable DC signal. The proposed rectifier enables harvesting energy at even a low input power from -40 dBm for a resistive load of 50 kΩ. It realizes a significant improvement in comparison with state of the art solutions.

Regional analysis of whole cell currents from hair cells of the turtle posterior crista.

PubMed

Brichta, Alan M; Aubert, Anne; Eatock, Ruth Anne; Goldberg, Jay M

2002-12-01

The turtle posterior crista is made up of two hemicristae, each consisting of a central zone containing type I and type II hair cells and a surrounding peripheral zone containing only type II hair cells and extending from the planum semilunatum to the nonsensory torus. Afferents from various regions of a hemicrista differ in their discharge properties. To see if afferent diversity is related to the basolateral currents of the hair cells innervated, we selectively harvested type I and II hair cells from the central zone and type II hair cells from two parts of the peripheral zone, one near the planum and the other near the torus. Voltage-dependent currents were studied with the whole cell, ruptured-patch method and characterized in voltage-clamp mode. We found regional differences in both outwardly and inwardly rectifying voltage-sensitive currents. As in birds and mammals, type I hair cells have a distinctive outwardly rectifying current (I(K,L)), which begins activating at more hyperpolarized voltages than do the outward currents of type II hair cells. Activation of I(K,L) is slow and sigmoidal. Maximal outward conductances are large. Outward currents in type II cells vary in their activation kinetics. Cells with fast kinetics are associated with small conductances and with partial inactivation during 200-ms depolarizing voltage steps. Almost all type II cells in the peripheral zone and many in the central zone have fast kinetics. Some type II cells in the central zone have large outward currents with slow kinetics and little inactivation. Although these currents resemble I(K,L), they can be distinguished from the latter both electrophysiologically and pharmacologically. There are two varieties of inwardly rectifying currents in type II hair cells: activation of I(K1) is rapid and monoexponential, whereas that of I(h) is slow and sigmoidal. Many type II cells either have both inward currents or only have I(K1); very few cells only have I(h). Inward currents are less conspicuous in type I cells. Type II cells near the torus have smaller outwardly rectifying currents and larger inwardly rectifying currents than those near the planum, but the differences are too small to account for variations in discharge properties of bouton afferents innervating the two regions of the peripheral zone. The large outward conductances seen in central cells, by lowering impedances, may contribute to the low rotational gains of some central-zone afferents.

Theoretical study on the rectifying performance of organoimido derivatives of hexamolybdates.

PubMed

Wen, Shizheng; Yang, Guochun; Yan, Likai; Li, Haibin; Su, Zhongmin

2013-02-25

We design a new type of molecular diode, based on the organoimido derivatives of hexamolybdates, by exploring the rectifying performances using density functional theory combined with the non-equilibrium Green's function. Asymmetric current-voltage characteristics were obtained for the models with an unexpected large rectification ratio. The rectifying behavior can be understood by the asymmetrical shift of the transmission peak observed under different polarities. It is interesting to find that the preferred electron-transport direction in our studied system is different from that of the organic D-bridge-A system. The results show that the studied organic-inorganic hybrid systems have an intrinsically robust rectifying ratio, which should be taken into consideration in the design of the molecular diodes. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-power converters for space applications

NASA Technical Reports Server (NTRS)

Park, J. N.; Cooper, Randy

1991-01-01

Phase 1 was a concept definition effort to extend space-type dc/dc converter technology to the megawatt level with a weight of less than 0.1 kg/kW (220 lb./MW). Two system designs were evaluated in Phase 1. Each design operates from a 5 kV stacked fuel cell source and provides a voltage step-up to 100 kV at 10 A for charging capacitors (100 pps at a duty cycle of 17 min on, 17 min off). Both designs use an MCT-based, full-bridge inverter, gaseous hydrogen cooling, and crowbar fault protection. The GE-CRD system uses an advanced high-voltage transformer/rectifier filter is series with a resonant tank circuit, driven by an inverter operating at 20 to 50 kHz. Output voltage is controlled through frequency and phase shift control. Fast transient response and stability is ensured via optimal control. Super-resonant operation employing MCTs provides the advantages of lossless snubbing, no turn-on switching loss, use of medium-speed diodes, and intrinsic current limiting under load-fault conditions. Estimated weight of the GE-CRD system is 88 kg (1.5 cu ft.). Efficiency of 94.4 percent and total system loss is 55.711 kW operating at 1 MW load power. The Maxwell system is based on a resonance transformer approach using a cascade of five LC resonant sections at 100 kHz. The 5 kV bus is converted to a square wave, stepped-up to a 100 kV sine wave by the LC sections, rectified, and filtered. Output voltage is controlled with a special series regulator circuit. Estimated weight of the Maxwell system is 83.8 kg (4.0 cu ft.). Efficiency is 87.2 percent and total system loss is 146.411 kW operating at 1 MW load power.

SVPWM Technique with Varying DC-Link Voltage for Common Mode Voltage Reduction in a Matrix Converter and Analytical Estimation of its Output Voltage Distortion

NASA Astrophysics Data System (ADS)

Padhee, Varsha

Common Mode Voltage (CMV) in any power converter has been the major contributor to premature motor failures, bearing deterioration, shaft voltage build up and electromagnetic interference. Intelligent control methods like Space Vector Pulse Width Modulation (SVPWM) techniques provide immense potential and flexibility to reduce CMV, thereby targeting all the afore mentioned problems. Other solutions like passive filters, shielded cables and EMI filters add to the volume and cost metrics of the entire system. Smart SVPWM techniques therefore, come with a very important advantage of being an economical solution. This thesis discusses a modified space vector technique applied to an Indirect Matrix Converter (IMC) which results in the reduction of common mode voltages and other advanced features. The conventional indirect space vector pulse-width modulation (SVPWM) method of controlling matrix converters involves the usage of two adjacent active vectors and one zero vector for both rectifying and inverting stages of the converter. By suitable selection of space vectors, the rectifying stage of the matrix converter can generate different levels of virtual DC-link voltage. This capability can be exploited for operation of the converter in different ranges of modulation indices for varying machine speeds. This results in lower common mode voltage and improves the harmonic spectrum of the output voltage, without increasing the number of switching transitions as compared to conventional modulation. To summarize it can be said that the responsibility of formulating output voltages with a particular magnitude and frequency has been transferred solely to the rectifying stage of the IMC. Estimation of degree of distortion in the three phase output voltage is another facet discussed in this thesis. An understanding of the SVPWM technique and the switching sequence of the space vectors in detail gives the potential to estimate the RMS value of the switched output voltage of any converter. This conceivably aids the sizing and design of output passive filters. An analytical estimation method has been presented to achieve this purpose for am IMC. Knowledge of the fundamental component in output voltage can be utilized to calculate its Total Harmonic Distortion (THD). The effectiveness of the proposed SVPWM algorithms and the analytical estimation technique is substantiated by simulations in MATLAB / Simulink and experiments on a laboratory prototype of the IMC. Proper comparison plots have been provided to contrast the performance of the proposed methods with the conventional SVPWM method. The behavior of output voltage distortion and CMV with variation in operating parameters like modulation index and output frequency has also been analyzed.

Impulse commutating circuit with transformer to limit reapplied voltage

NASA Technical Reports Server (NTRS)

Mcconville, J. H.

1973-01-01

Silicon controlled rectifier opens circuit with currents flowing up to values of 30 amperes. Switching concept halves both current and voltage in middle of commutating cycle thereby lowering size and weight requirements. Commutating circuit can be turned on or off by command and will remain on in absence of load due to continuous gate.

Precision envelope detector and linear rectifier circuitry

DOEpatents

Davis, Thomas J.

1980-01-01

Disclosed is a method and apparatus for the precise linear rectification and envelope detection of oscillatory signals. The signal is applied to a voltage-to-current converter which supplies current to a constant current sink. The connection between the converter and the sink is also applied through a diode and an output load resistor to a ground connection. The connection is also connected to ground through a second diode of opposite polarity from the diode in series with the load resistor. Very small amplitude voltage signals applied to the converter will cause a small change in the output current of the converter, and the difference between the output current and the constant current sink will be applied either directly to ground through the single diode, or across the output load resistor, dependent upon the polarity. Disclosed also is a full-wave rectifier utilizing constant current sinks and voltage-to-current converters. Additionally, disclosed is a combination of the voltage-to-current converters with differential integrated circuit preamplifiers to boost the initial signal amplitude, and with low pass filtering applied so as to obtain a video or signal envelope output.

ELECTRICAL CIRCUITS USING COLD-CATHODE TRIODE VALVES

DOEpatents

Goulding, F.S.

1957-11-26

An electrical circuit which may be utilized as a pulse generator or voltage stabilizer is presented. The circuit employs a cold-cathode triode valve arranged to oscillate between its on and off stages by the use of selected resistance-capacitance time constant components in the plate and trigger grid circuits. The magnitude of the d-c voltage applied to the trigger grid circuit effectively controls the repetition rate of the output pulses. In the voltage stabilizer arrangement the d-c control voltage is a portion of the supply voltage and the rectified output voltage is substantially constant.

Effects of electrical loads containing non-resistive components on electromagnetic vibration energy harvester performance

NASA Astrophysics Data System (ADS)

Zhang, Hui; Corr, Lawrence R.; Ma, Tianwei

2018-02-01

To further advance the existing knowledge base on rectified vibration energy harvester design, this study investigates the fundamental effects of electrical loads containing non-resistive components (e.g., rectifiers and capacitors) on electromagnetic energy harvester performance. Three types of electrical loads, namely (I) a resistor with a rectifier, (II) a resistor with a rectifier and a capacitor, and (III) a simple charging circuit consisting of a rectifier and a capacitor, were considered. A linear electromagnetic energy harvester was used as an illustrative example. Results have verified that device performance obtained from pure-resistive loads cannot be generalized to applications involving rectifier and/or capacitor loads. Such generalization caused not only an overestimation in the maximum power delivered to the load resistance for cases (I) and (II), but also an underestimation of the optimal load resistance and an overestimation of device natural frequency for case (II). Results obtained from case (II) also showed that it is possible to tune the mechanical natural frequency of device using an adjustable regulating capacitor. For case (III), it was found that a larger storing capacitor, with a low rectifier voltage drop, improves the performance of the electromagnetic harvester.

Gating, modulation and subunit composition of voltage-gated K+ channels in dendritic inhibitory interneurones of rat hippocampus

PubMed Central

Lien, Cheng-Chang; Martina, Marco; Schultz, Jobst H; Ehmke, Heimo; Jonas, Peter

2002-01-01

GABAergic interneurones are diverse in their morphological and functional properties. Perisomatic inhibitory cells show fast spiking during sustained current injection, whereas dendritic inhibitory cells fire action potentials with lower frequency. We examined functional and molecular properties of K+ channels in interneurones with horizontal dendrites in stratum oriens-alveus (OA) of the hippocampal CA1 region, which mainly comprise somatostatin-positive dendritic inhibitory cells. Voltage-gated K+ currents in nucleated patches isolated from OA interneurones consisted of three major components: a fast delayed rectifier K+ current component that was highly sensitive to external 4-aminopyridine (4-AP) and tetraethylammonium (TEA) (half-maximal inhibitory concentrations < 0.1 mm for both blockers), a slow delayed rectifier K+ current component that was sensitive to high concentrations of TEA, but insensitive to 4-AP, and a rapidly inactivating A-type K+ current component that was blocked by high concentrations of 4-AP, but resistant to TEA. The relative contributions of these components to the macroscopic K+ current were estimated as 57 ± 5, 25 ± 6, and 19 ± 2 %, respectively. Dendrotoxin, a selective blocker of Kv1 channels had only minimal effects on K+ currents in nucleated patches. Coapplication of the membrane-permeant cAMP analogue 8-(4-chlorophenylthio)-adenosine 3′:5′-cyclic monophosphate (cpt-cAMP) and the phosphodiesterase blocker isobutyl-methylxanthine (IBMX) resulted in a selective inhibition of the fast delayed rectifier K+ current component. This inhibition was absent in the presence of the protein kinase A (PKA) inhibitor H-89, implying the involvement of PKA-mediated phosphorylation. Single-cell reverse transcription-polymerase chain reaction (RT-PCR) analysis revealed a high abundance of Kv3.2 mRNA in OA interneurones, whereas the expression level of Kv3.1 mRNA was markedly lower. Similarly, RT-PCR analysis showed a high abundance of Kv4.3 mRNA, whereas Kv4.2 mRNA was undetectable. This suggests that the fast delayed rectifier K+ current and the A-type K+ current component are mediated predominantly by homomeric Kv3.2 and Kv4.3 channels. Selective modulation of Kv3.2 channels in OA interneurones by cAMP is likely to be an important factor regulating the activity of dendritic inhibitory cells in principal neurone-interneurone microcircuits. PMID:11790809

Single-molecular diodes based on opioid derivatives.

PubMed

Siqueira, M R S; Corrêa, S M; Gester, R M; Del Nero, J; Neto, A M J C

2015-12-01

We propose an efficient single-molecule rectifier based on a derivative of opioid. Electron transport properties are investigated within the non-equilibrium Green's function formalism combined with density functional theory. The analysis of the current-voltage characteristics indicates obvious diode-like behavior. While heroin presents rectification coefficient R>1, indicating preferential electronic current from electron-donating to electron-withdrawing, 3 and 6-acetylmorphine and morphine exhibit contrary behavior, R<1. Our calculations indicate that the simple inclusion of acetyl groups modulate a range of devices, which varies from simple rectifying to resonant-tunneling diodes. In particular, the rectification rations for heroin diodes show microampere electron current with a maximum of rectification (R=9.1) at very low bias voltage of ∼0.6 V and (R=14.3)∼1.8 V with resistance varying between 0.4 and 1.5 M Ω. Once most of the current single-molecule diodes usually rectifies in nanoampere, are not stable over 1.0 V and present electrical resistance around 10 M. Molecular devices based on opioid derivatives are promising in molecular electronics.

Hybrid high direct current circuit interrupter

DOEpatents

Rockot, J.H.; Mikesell, H.E.; Jha, K.N.

1998-08-11

A device and a method are disclosed for interrupting very high direct currents (greater than 100,000 amperes) and simultaneously blocking high voltages (greater than 600 volts). The device utilizes a mechanical switch to carry very high currents continuously with low loss and a silicon controlled rectifier (SCR) to bypass the current around the mechanical switch while its contacts are separating. A commutation circuit, connected in parallel with the SCR, turns off the SCR by utilizing a resonant circuit to divert the SCR current after the switch opens. 7 figs.

Electrostatic Vibration Energy Harvester Pre-charged Wirelessly at 2.45 GHz

NASA Astrophysics Data System (ADS)

Saddi, Z.; Takhedmit, H.; Karami, A.; Basset, P.; Cirio, L.

2016-11-01

This paper reports the design, fabrication and experiments of an electrostatic vibration harvester (e-VEH), pre-charged wirelessly for the first time by using an electromagnetic waves harvester at 2.4 GHz. The rectenna uses the Cockcroft-Walton voltage doubler rectifier. It is designed and optimized to operate at low power densities and provides high voltage levels: 0.5 V at 0.5 μW/cm2 and 0.8 V at 1 μW/cm2 The e-VEH uses the Bennet doubler as conditioning circuit. Experiments show 23 V voltage across the transducer terminal when the harvester is excited at 25 Hz by 1.5 g of external acceleration. An accumulated energy of 275 μJ and a maximum power of 0.4 μW are available for the load.

Double buffer circuit for the characterization of piezoelectric nanogenerators based on ZnO nanowires

NASA Astrophysics Data System (ADS)

Nadaud, Kevin; Morini, François; Dahiya, Abhishek S.; Justeau, Camille; Boubenia, Sarah; Rajeev, Kiron P.; Alquier, Daniel; Poulin-Vittrant, Guylaine

2018-02-01

The accurate and precise measurements of voltage and current output generated by a nanogenerator (NG) are crucial to design the rectifying/harvesting circuit and to evaluate correctly the amount of energy provided by a NG. High internal impedance of the NGs (several MΩ) is the main limiting factor for designing circuits to measure the open circuit voltage. In this paper, we present the influence of the characterization circuit used to measure the generated voltage of piezoelectric NGs. The proposed circuit consists of a differential amplifier which permits us to measure the voltage provided by the NG without applying any parasitic bias to it. The proposed circuit is compared to a commercial electrometer and a homemade buffer circuit based on a voltage follower circuit to show its interest. For the proposed double buffer circuit, no asymmetric behavior has been noticed contrary to the measurements made using a simple buffer circuit and a Keithley electrometer. The proposed double buffer circuit is thus suitable to measure the NG voltage in a transparent way, as an ideal voltage probe should do.

A Hybrid LCC-VSC HVDC Transmission System Supplying a Passive Load

NASA Astrophysics Data System (ADS)

Kotb, Omar

High Voltage Direct Current (HVDC) transmission systems continue to be an excellent asset in modern power systems, mainly for their ability to overcome the problems of AC transmission, such as the interconnection of asynchronous grids, stability of long transmission lines, and use of long cables for power transmission. In the past 20 years, Voltage Source Converter (VSC)-HVDC transmission systems were developed and installed in many projects, thereby adding more operational benefits to DC transmission option, such as high controllability, ability to supply weak networks, and reduced converter reactive power demand. Nevertheless, VSC-HVDC transmission suffers from the disadvantages of high losses and cost. In this research, a hybrid HVDC employing a Line Commutated Converter (LCC) as rectifier and a VSC as inverter is used to supply a passive network through a DC cable. The hybrid system is best suited for unidirectional power transmission scenarios, such as power transmission to islands and remote load centers, where the construction of new transmission lines is prohibitively expensive. Control modes for the rectifier and inverter are selected and implemented using Proportional Integral (PI) controllers. Special control schemes are developed for abnormal operating conditions such as starting at light load and recovering from AC network faults. The system performance under steady state and transient conditions is investigated by EMTP-RV simulations. The results show the feasibility of the hybrid system.

Block of HERG human K(+) channel and IKr of guinea pig cardiomyocytes by chlorpromazine.

PubMed

Lee, So-Young; Choi, Se-Young; Youm, Jae Boum; Ho, Won-Kyung; Earm, Yung E; Lee, Chin O; Jo, Su-Hyun

2004-05-01

Chlorpromazine, a commonly used antipsychotic drug, has been known to induce QT prolongation and torsades de pointes, which can cause sudden death. We studied the effects of chlorpromazine on the human ether-a-go-go-related gene (HERG) channel expressed in Xenopus oocytes and on delayed rectifier K current of guinea pig ventricular myocytes. Application of chlorpromazine showed a dose-dependent decrease in the amplitudes of steady-state currents and tail currents of HERG. The decrease became more pronounced at increasingly positive potential, suggesting that the blockade of HERG by chlorpromazine is voltage dependent. IC50 for chlorpromazine block of HERG current was progressively decreased according to depolarization: IC50 values at -30, 0, and +30 mV were 10.5, 8.8, and 4.9 microM, respectively. The block of HERG current during the voltage step increased with time starting from a level 89% of the control current. In guinea pig ventricular myocytes, bath application of 2 and 5 microM chlorpromazine at 36 degree C blocked rapidly activating delayed rectifier K current (IKr) by 31 and 83%, respectively. How-ever, the same concentrations of chlorpromazine failed to significantly block slowly activating delayed rectifier K current (IKs). Our findings suggest that the arrhythmogenic side effect of chlorpromazine is caused by blockade of HERG and rapid component of delayed rectifier K current rather than by blockade of the slow component.

AC to DC Bridgeless Boost Converter for Ultra Low Input Energy Harvesting

NASA Astrophysics Data System (ADS)

Dawam, A. H. A.; Muhamad, M.

2018-03-01

This paper presents design of circuit which converts low input AC voltage to a higher output DC voltage. A buck-boost topology and boost topology are combined to condition cycle of an AC input voltage. the unique integration of a combining circuit of buck-boost and boost circuit have been proposed in order to introduce a new direct ac-dc power converter topology without conventional diode bridge rectifier. The converter achieved to convert a milli-volt scale of input AC voltage into a volt scale of output DC voltages which is from 400mV to 3.3V.

Optimization of Passive Low Power Wireless Electromagnetic Energy Harvesters

PubMed Central

Nimo, Antwi; Grgić, Dario; Reindl, Leonhard M.

2012-01-01

This work presents the optimization of antenna captured low power radio frequency (RF) to direct current (DC) power converters using Schottky diodes for powering remote wireless sensors. Linearized models using scattering parameters show that an antenna and a matched diode rectifier can be described as a form of coupled resonator with different individual resonator properties. The analytical models show that the maximum voltage gain of the coupled resonators is mainly related to the antenna, diode and load (remote sensor) resistances at matched conditions or resonance. The analytical models were verified with experimental results. Different passive wireless RF power harvesters offering high selectivity, broadband response and high voltage sensitivity are presented. Measured results show that with an optimal resistance of antenna and diode, it is possible to achieve high RF to DC voltage sensitivity of 0.5 V and efficiency of 20% at −30 dBm antenna input power. Additionally, a wireless harvester (rectenna) is built and tested for receiving range performance. PMID:23202014

Optimization of passive low power wireless electromagnetic energy harvesters.

PubMed

Nimo, Antwi; Grgić, Dario; Reindl, Leonhard M

2012-10-11

This work presents the optimization of antenna captured low power radio frequency (RF) to direct current (DC) power converters using Schottky diodes for powering remote wireless sensors. Linearized models using scattering parameters show that an antenna and a matched diode rectifier can be described as a form of coupled resonator with different individual resonator properties. The analytical models show that the maximum voltage gain of the coupled resonators is mainly related to the antenna, diode and load (remote sensor) resistances at matched conditions or resonance. The analytical models were verified with experimental results. Different passive wireless RF power harvesters offering high selectivity, broadband response and high voltage sensitivity are presented. Measured results show that with an optimal resistance of antenna and diode, it is possible to achieve high RF to DC voltage sensitivity of 0.5 V and efficiency of 20% at -30 dBm antenna input power. Additionally, a wireless harvester (rectenna) is built and tested for receiving range performance.

The function and molecular identity of inward rectifier channels in vestibular hair cells of the mouse inner ear

PubMed Central

Levin, Michaela E.

2012-01-01

Inner ear hair cells respond to mechanical stimuli with graded receptor potentials. These graded responses are modulated by a host of voltage-dependent currents that flow across the basolateral membrane. Here, we examine the molecular identity and the function of a class of voltage-dependent ion channels that carries the potassium-selective inward rectifier current known as IK1. IK1 has been identified in vestibular hair cells of various species, but its molecular composition and functional contributions remain obscure. We used quantitative RT-PCR to show that the inward rectifier gene, Kir2.1, is highly expressed in mouse utricle between embryonic day 15 and adulthood. We confirmed Kir2.1 protein expression in hair cells by immunolocalization. To examine the molecular composition of IK1, we recorded voltage-dependent currents from type II hair cells in response to 50-ms steps from −124 to −54 in 10-mV increments. Wild-type cells had rapidly activating inward currents with reversal potentials close to the K+ equilibrium potential and a whole-cell conductance of 4.8 ± 1.5 nS (n = 46). In utricle hair cells from Kir2.1-deficient (Kir2.1−/−) mice, IK1 was absent at all stages examined. To identify the functional contribution of Kir2.1, we recorded membrane responses in current-clamp mode. Hair cells from Kir2.1−/− mice had significantly (P < 0.001) more depolarized resting potentials and larger, slower membrane responses than those of wild-type cells. These data suggest that Kir2.1 is required for IK1 in type II utricle hair cells and contributes to hyperpolarized resting potentials and fast, small amplitude receptor potentials in response to current inputs, such as those evoked by hair bundle deflections. PMID:22496522

Rectifying behavior in the GaN/graded-AlxGa1‑xN/GaN double heterojunction structure

NASA Astrophysics Data System (ADS)

Wang, Caiwei; Jiang, Yang; Ma, Ziguang; Zuo, Peng; Yan, Shen; Die, Junhui; Wang, Lu; Jia, Haiqiang; Wang, Wenxin; Chen, Hong

2018-05-01

Rectifying characteristics induced by the polarization fields are achieved in the GaN/graded-AlxGa1‑xN/GaN double heterojunction structure (DHS). By grading AlxGa1‑xN from x  =  0.4(0.3) to 0.1, the DHS displays a better conductivity for smaller reverse bias than for forward bias voltages (reverse rectifying behavior) which is opposite to p–n junction rectifying characteristics. The mechanism of reverse rectifying behavior is illustrated via calculating the energy band structures of the samples. The band gap narrowing caused by decreasing Al composition could compensate the for the band tilt due to the polarization effect in AlxGa1‑xN barriers, thus lowering the barrier height for electron transport from top to bottom. The reverse rectifying behavior could be enhanced by increasing the Al content and the thickness of the multi-layer graded AlxGa1‑xN barriers. This work gives a better understanding of the mechanism of carrier transport in a DHS and makes it possible to realize novel GaN-based heterojunction transistors.

Contribution of delayed rectifier potassium currents to the electrical activity of murine colonic smooth muscle

PubMed Central

Koh, S D; Ward, S M; Dick, G M; Epperson, A; Bonner, H P; Sanders, K M; Horowitz, B; Kenyon, J L

1999-01-01

We used intracellular microelectrodes to record the membrane potential (Vm) of intact murine colonic smooth muscle. Electrical activity consisted of spike complexes separated by quiescent periods (Vm≈−60 mV). The spike complexes consisted of about a dozen action potentials of approximately 30 mV amplitude. Tetraethylammonium (TEA, 1–10 mM) had little effect on the quiescent periods but increased the amplitude of the action potential spikes. 4-Aminopyridine (4-AP, ⋧ 5 mM) caused continuous spiking.Voltage clamp of isolated myocytes identified delayed rectifier K+ currents that activated rapidly (time to half-maximum current, 11.5 ms at 0 mV) and inactivated in two phases (τf = 96 ms, τs = 1.5 s at 0 mV). The half-activation voltage of the permeability was −27 mV, with significant activation at −50 mV.TEA (10 mM) reduced the outward current at potentials positive to 0 mV. 4-AP (5 mM) reduced the early current but increased outward current at later times (100–500 ms) consistent with block of resting channels relieved by depolarization. 4-AP inhibited outward current at potentials negative to −20 mV, potentials where TEA had no effect.Qualitative PCR amplification of mRNA identified transcripts encoding delayed rectifier K+ channel subunits Kv1.6, Kv4.1, Kv4.2, Kv4.3 and the Kvβ1.1 subunit in murine colon myocytes. mRNA encoding Kv 1.4 was not detected.We find that TEA-sensitive delayed rectifier currents are important determinants of action potential amplitude but not rhythmicity. Delayed rectifier currents sensitive to 4-AP are important determinants of rhythmicity but not action potential amplitude. PMID:10050014

A Non-canonical Voltage-Sensing Mechanism Controls Gating in K2P K(+) Channels.

PubMed

Schewe, Marcus; Nematian-Ardestani, Ehsan; Sun, Han; Musinszki, Marianne; Cordeiro, Sönke; Bucci, Giovanna; de Groot, Bert L; Tucker, Stephen J; Rapedius, Markus; Baukrowitz, Thomas

2016-02-25

Two-pore domain (K2P) K(+) channels are major regulators of excitability that endow cells with an outwardly rectifying background "leak" conductance. In some K2P channels, strong voltage-dependent activation has been observed, but the mechanism remains unresolved because they lack a canonical voltage-sensing domain. Here, we show voltage-dependent gating is common to most K2P channels and that this voltage sensitivity originates from the movement of three to four ions into the high electric field of an inactive selectivity filter. Overall, this ion-flux gating mechanism generates a one-way "check valve" within the filter because outward movement of K(+) induces filter opening, whereas inward movement promotes inactivation. Furthermore, many physiological stimuli switch off this flux gating mode to convert K2P channels into a leak conductance. These findings provide insight into the functional plasticity of a K(+)-selective filter and also refine our understanding of K2P channels and the mechanisms by which ion channels can sense voltage. Copyright © 2016 The Authors. Published by Elsevier Inc. All rights reserved.

Soft switching resonant converter with duty-cycle control in DC micro-grid system

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren

2018-01-01

Resonant converter has been widely used for the benefits of low switching losses and high circuit efficiency. However, the wide frequency variation is the main drawback of resonant converter. This paper studies a new modular resonant converter with duty-cycle control to overcome this problem and realise the advantages of low switching losses, no reverse recovery current loss, balance input split voltages and constant frequency operation for medium voltage direct currentgrid or system network. Series full-bridge (FB) converters are used in the studied circuit in order to reduce the voltage stresses and power rating on power semiconductors. Flying capacitor is used between two FB converters to balance input split voltages. Two circuit modules are paralleled on the secondary side to lessen the current rating of rectifier diodes and the size of magnetic components. The resonant tank is operated at inductive load circuit to help power switches to be turned on at zero voltage with wide load range. The pulse-width modulation scheme is used to regulate output voltage. Experimental verifications are provided to show the performance of the proposed circuit.

Unidirectional oxide hetero-interface thin-film diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon

2015-10-05

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing amore » high feasibility for practical applications.« less

A 2.5 kW cascaded Schwarz converter for 20 kHz power distribution

NASA Technical Reports Server (NTRS)

Shetler, Russell E.; Stuart, Thomas A.

1989-01-01

Because it avoids the high currents in a parallel loaded capacitor, the cascaded Schwarz converter should offer better component utilization than converters with sinusoidal output voltages. The circuit is relatively easy to protect, and it provides a predictable trapezoidal voltage waveform that should be satisfactory for 20-kHz distribution systems. Analysis of the system is enhanced by plotting curves of normalized variables vs. gamma(1), where gamma(1) is proportional to the variable frequency of the first stage. Light-load operation is greatly improved by the addition of a power recycling rectifier bridge that is back biased at medium to heavy loads. Operation has been verified on a 2.5-kW circuit that uses input and output voltages in the same range as those anticipated for certain future spacecraft power systems.

Evaluation of a high power inverter for potential space applications

NASA Technical Reports Server (NTRS)

Guynes, B. V.; Lanier, J. R., Jr.

1976-01-01

The ADM-006 inverter discussed utilizes a unique method of using power switching circuits to produce three-phase low harmonic content voltages without any significant filtering. This method is referred to as the power center approach to inverter design and is explained briefly. The results are presented of tests performed by MSFC to evaluate inverter performance, especially when required to provide power to nonlinear loads such as half or full wave rectified loads with capacitive filtering. Test preocedures and results are described. These tests show that the power center inverter essentially met or exceeded all of claims excluding voltage regulation (3.9 percent versus specified 3.3 percent) and would be a good candidate for high power inverter applications such as may be found on Space Station, Spacelab, etc.

Single-molecule designs for electric switches and rectifiers.

PubMed

Kornilovitch, Pavel; Bratkovsky, Alexander; Williams, Stanley

2003-12-01

A design for molecular rectifiers is proposed. Current rectification is based on the spatial asymmetry of a molecule and requires only one resonant conducting molecular orbital. Rectification is caused by asymmetric coupling of the orbital to the electrodes, which results in asymmetric movement of the two Fermi levels with respect to the orbital under external bias. Results from numerical studies of the family of suggested molecular rectifiers, HS-(CH(2))(n)-C(6)H(4)(CH(2))(m)SH, are presented. Current rectification ratios in excess of 100 are achievable for n = 2 and m > 6. A class of bistable stator-rotor molecules is proposed. The stationary part connects the two electrodes and facilitates electron transport between them. The rotary part, which has a large dipole moment, is attached to an atom of the stator via a single sigma bond. Electrostatic bonds formed between the oxygen atom of the rotor and hydrogen atoms of the stator make the symmetric orientation of the dipole unstable. The rotor has two potential minima with equal energy for rotation about the sigma bond. The dipole can be flipped between the two states by an external electric field. Both rotor-orientation states have asymmetric current-voltage characteristics that are the reverse of each other, so they are distinguishable electrically. Theoretical results on conformation, energy barriers, retention times, switching voltages, and current-voltage characteristics are presented for a particular stator-rotor molecule. Such molecules could be the base for single-molecule switches, reversible diodes, and other molecular electronic devices.

A novel frequency analysis method for assessing K(ir)2.1 and Na (v)1.5 currents.

PubMed

Rigby, J R; Poelzing, S

2012-04-01

Voltage clamping is an important tool for measuring individual currents from an electrically active cell. However, it is difficult to isolate individual currents without pharmacological or voltage inhibition. Herein, we present a technique that involves inserting a noise function into a standard voltage step protocol, which allows one to characterize the unique frequency response of an ion channel at different step potentials. Specifically, we compute the fast Fourier transform for a family of current traces at different step potentials for the inward rectifying potassium channel, K(ir)2.1, and the channel encoding the cardiac fast sodium current, Na(v)1.5. Each individual frequency magnitude, as a function of voltage step, is correlated to the peak current produced by each channel. The correlation coefficient vs. frequency relationship reveals that these two channels are associated with some unique frequencies with high absolute correlation. The individual IV relationship can then be recreated using only the unique frequencies with magnitudes of high absolute correlation. Thus, this study demonstrates that ion channels may exhibit unique frequency responses.

Role of voltage-gated K(+) channels in regulating Ca(2+) entry in rat cortical astrocytes.

PubMed

Wu, King-Chuen; Kuo, Chang-Shin; Chao, Chia-Chia; Huang, Chieh-Chen; Tu, Yuan-Kun; Chan, Paul; Leung, Yuk-Man

2015-03-01

Astrocytes have multiple functions such as provision of nourishment and mechanical support to the nervous system, helping to clear extracellular metabolites of neurons and modulating synaptic transmission by releasing gliotransmitters. In excitable cells, voltage-gated K(+) (Kv) channels serve to repolarize during action potentials. Astrocytes are considered non-excitable cells since they are not able to generate action potentials. There is an abundant expression of various Kv channels in astrocytes but the functions of these Kv channels remain unclear. We examined whether these astrocyte Kv channels regulate astrocyte "excitability" in the form of cytosolic Ca(2+) signaling. Electrophysiological examination revealed that neonatal rat cortical astrocytes possessed both delayed rectifier type and A-type Kv channels. Pharmacological blockade of both delayed rectifier Kv channels by TEA and A-type Kv channels by quinidine significantly suppressed store-operated Ca(2+) influx; however, TEA alone or quinidine alone did not suffice to cause such suppression. TEA and quinidine together dramatically enhanced current injection-triggered membrane potential overshoot (depolarization); either drug alone caused much smaller enhancements. Taken together, the results suggest both delayed rectifier and A-type Kv channels regulate astrocyte Ca(2+) signaling via controlling membrane potential.

Block of the delayed rectifier current (IK) by the 5-HT3 antagonists ondansetron and granisetron in feline ventricular myocytes.

PubMed Central

de Lorenzi, F G; Bridal, T R; Spinelli, W

1994-01-01

1. We investigated the effects of two 5-HT3 antagonists, ondansetron and granisetron, on the action potential duration (APD) and the delayed rectifier current (IK) of feline isolated ventricular myocytes. Whole-cell current and action potential recordings were performed at 37 degrees C with the patch clamp technique. 2. Ondansetron and granisetron blocked IK with a KD of 1.7 +/- 1.0 and 4.3 +/- 1.7 microM, respectively. At a higher concentration (30 microM), both drugs blocked the inward rectifier (IKl). 3. The block of IK was dependent on channel activation. Both drugs slowed the decay of IK tail currents and produced a crossover with the pre-drug current trace. These results are consistent with block and unblock from the open state of the channel. 4. Granisetron showed an intrinsic voltage-dependence as the block increased with depolarization. The equivalent voltage-dependency of block (delta) was 0.10 +/- 0.04, suggesting that granisetron blocks from the intracellular side at a binding site located 10% across the transmembrane electrical field. 5. Ondansetron (1 microM) and granisetron (3 microM) prolonged APD by about 30% at 0.5 Hz. The prolongation of APD by ondansetron was abolished at faster frequencies (3 Hz) showing reverse rate dependence. 6. In conclusion, the 5-HT3 antagonists, ondansetron and granisetron, are open state blockers of the ventricular delayed rectifier and show a clear class III action. PMID:7834204

Microglial K+ Channel Expression in Young Adult and Aged Mice

PubMed Central

Schilling, Tom; Eder, Claudia

2015-01-01

The K+ channel expression pattern of microglia strongly depends on the cells' microenvironment and has been recognized as a sensitive marker of the cells' functional state. While numerous studies have been performed on microglia in vitro, our knowledge about microglial K+ channels and their regulation in vivo is limited. Here, we have investigated K+ currents of microglia in striatum, neocortex and entorhinal cortex of young adult and aged mice. Although almost all microglial cells exhibited inward rectifier K+ currents upon membrane hyperpolarization, their mean current density was significantly enhanced in aged mice compared with that determined in young adult mice. Some microglial cells additionally exhibited outward rectifier K+ currents in response to depolarizing voltage pulses. In aged mice, microglial outward rectifier K+ current density was significantly larger than in young adult mice due to the increased number of aged microglial cells expressing these channels. Aged dystrophic microglia exhibited outward rectifier K+ currents more frequently than aged ramified microglia. The majority of microglial cells expressed functional BK-type, but not IK- or SK-type, Ca2+-activated K+ channels, while no differences were found in their expression levels between microglia of young adult and aged mice. Neither microglial K+ channel pattern nor K+ channel expression levels differed markedly between the three brain regions investigated. It is concluded that age-related changes in microglial phenotype are accompanied by changes in the expression of microglial voltage-activated, but not Ca2+-activated, K+ channels. PMID:25472417

3-D printed 2.4 GHz rectifying antenna for wireless power transfer applications

NASA Astrophysics Data System (ADS)

Skinner, Matthew

In this work, a 3D printed rectifying antenna that operates at the 2.4GHz WiFi band was designed and manufactured. The printed material did not have the same properties of bulk material, so the printed materials needed to be characterized. The antenna and rectifying circuit was printed out of Acrylonitrile Butadiene Styrene (ABS) filament and a conductive silver paste, with electrical components integrated into the circuit. Before printing the full rectifying antenna, each component was printed and evaluated. The printed antenna operated at the desired frequency with a return loss of -16 dBm with a bandwidth of 70MHz. The radiation pattern was measured in an anechoic chamber with good matching to the model. The rectifying circuit was designed in Ansys Circuit Simulation using Schottky diodes to enable the circuit to operate at lower input power levels. Two rectifying circuits were manufactured, one by printing the conductive traces with silver ink, and one with traces made from copper. The printed silver ink is less conductive than the bulk copper and therefore the output voltage of the printed rectifier was lower than the copper circuit. The copper circuit had an efficiency of 60% at 0dBm and the printed silver circuit had an efficiency of 28.6% at 0dBm. The antenna and rectifying circuits were then connected to each other and the performance was compared to a fully printed integrated rectifying antenna. The rectifying antennas were placed in front of a horn antenna while changing the power levels at the antenna. The efficiency of the whole system was lower than the individual components but an efficiency of 11% at 10dBm was measured.

TEMPO/viologen electrochemical heterojunction for diffusion-controlled redox mediation: a highly rectifying bilayer-sandwiched device based on cross-reaction at the interface between dissimilar redox polymers.

PubMed

Tokue, Hiroshi; Oyaizu, Kenichi; Sukegawa, Takashi; Nishide, Hiroyuki

2014-03-26

A couple of totally reversible redox-active molecules, which are different in redox potentials, 2,2,6,6-tetramethylpiperidin-1-oxyl (TEMPO) and viologen (V(2+)), were employed to give rise to a rectified redox conduction effect. Single-layer and bilayer devices were fabricated using polymers containing these sites as pendant groups per repeating unit. The devices were obtained by sandwiching the redox polymer layer(s) with indium tin oxide (ITO)/glass and Pt foil electrodes. Electrochemical measurements of the single-layer device composed of polynorbornene-bearing TEMPO (PTNB) exhibited a diffusion-limited current-voltage response based on the TEMPO(+)/TEMPO exchange reaction, which was almost equivalent to a redox gradient through the PTNB layer depending upon the thickness. The bilayer device gave rise to the current rectification because of the thermodynamically favored cross-reaction between TEMPO(+) and V(+) at the polymer/polymer interface. A current-voltage response obtained for the bilayer device demonstrated a two-step diffusion-limited current behavior as a result of the concurrent V(2+)/V(+) and V(+)/V(0) exchange reactions according to the voltage and suggested that the charge transport process through the device was most likely to be rate-determined by a redox gradient in the polymer layer. Current collection experiments revealed a charge transport balance throughout the device, as a result of the electrochemical stability and robustness of the polymers in both redox states.

Pulsed Heterodyne CO2 Laser/Scanner System. Volume 1. Assembly Report.

DTIC Science & Technology

1983-06-01

rack #2 houses the switches and variacs controlling the DC power rectifier, which is in an oil tank under the optical bench. These two units are...or fire hazards (due to oil filled electrical equipments). This section, however, addresses only the four main hazards. Ozone The atmospheric pressure...ventilation of the exhaust of the 002 lasers is essencial to the safe operation of this system. High Voltage The system consists of 40 separate

Temperature dependent simulation of diamond depleted Schottky PIN diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti

2016-06-14

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond.more » The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.« less

Control of resting membrane potential by delayed rectifier potassium currents in ferret airway smooth muscle cells.

PubMed Central

Fleischmann, B K; Washabau, R J; Kotlikoff, M I

1993-01-01

1. In order to determine the physiological role of specific potassium currents in airway smooth muscle, potassium currents were measured in freshly dissociated ferret trachealis cells using the nystatin-permeabilized, whole-cell method, at 35 degrees C. 2. The magnitude of the outward currents was markedly increased as bath temperature was increased from 22 to 35 degrees C. This increase was primarily due to the increase in maximum potassium conductance (gK,max), although there was also a small leftward shift in the relationship between gK and voltage at higher temperatures. The maximum conductance and the kinetics of current activation and inactivation were also temperature dependent. At 35 degrees C, gating of the current was steeply voltage dependent between -40 and 0 mV. Current activation was well fitted by fourth-order kinetics; the mean time constants of activation (30 mV clamp step) were 1.09 +/- 0.17 and 1.96 +/- 0.27 ms at 35 and 22 degrees C, respectively. 3. Outward currents using the nystatin method were qualitatively similar to delayed rectifier currents recorded in dialysed cells with high calcium buffering capacity solutions. 4-Aminopyridine (4-AP; 2 mM), a specific blocker of delayed rectifier potassium channels in this tissue, inhibited over 80% of the outward current evoked by voltage-clamp steps to between -10 and +20 mV (n = 6). Less than 5% of the outward current was blocked over the same voltage range by charybdotoxin (100 nM; n = 15), a specific antagonist of large-conductance, calcium-activated potassium channels in this tissue. 4. The degree to which delayed rectifier and calcium-activated potassium conductances control resting membrane potential was examined in current-clamp experiments. The resting membrane potential of current clamped cells was -33.6 +/- 1.0 mV (n = 62). Application of 4-AP (2 mM) resulted in a 14.4 +/- 1.0 mV depolarization (n = 8) and an increase in input resistance. Charybdotoxin (100 nM) had no effect on resting membrane potential (n = 6). 5. Force measurements were made in isolated strips of trachealis muscle to determine the effect of pharmacological blockade of individual potassium conductances on resting tone. In the presence of tetrodotoxin (1 microM) and atropine (1 microM), 4-AP increased baseline tension in a dose-dependent manner, with an EC50 of 1.8 mM (n = 13); application of 5 mM 4-AP increased tone to 86.8 +/- 8.1% of that produced by 1 microM methacholine, and this tone was almost completely inhibited by nifedipine (1 microM).(ABSTRACT TRUNCATED AT 400 WORDS) PMID:8271220

Voltage-dependent K+ channels improve the energy efficiency of signalling in blowfly photoreceptors

PubMed Central

2017-01-01

Voltage-dependent conductances in many spiking neurons are tuned to reduce action potential energy consumption, so improving the energy efficiency of spike coding. However, the contribution of voltage-dependent conductances to the energy efficiency of analogue coding, by graded potentials in dendrites and non-spiking neurons, remains unclear. We investigate the contribution of voltage-dependent conductances to the energy efficiency of analogue coding by modelling blowfly R1-6 photoreceptor membrane. Two voltage-dependent delayed rectifier K+ conductances (DRs) shape the membrane's voltage response and contribute to light adaptation. They make two types of energy saving. By reducing membrane resistance upon depolarization they convert the cheap, low bandwidth membrane needed in dim light to the expensive high bandwidth membrane needed in bright light. This investment of energy in bandwidth according to functional requirements can halve daily energy consumption. Second, DRs produce negative feedback that reduces membrane impedance and increases bandwidth. This negative feedback allows an active membrane with DRs to consume at least 30% less energy than a passive membrane with the same capacitance and bandwidth. Voltage-dependent conductances in other non-spiking neurons, and in dendrites, might be organized to make similar savings. PMID:28381642

Voltage-dependent K+ channels improve the energy efficiency of signalling in blowfly photoreceptors.

PubMed

Heras, Francisco J H; Anderson, John; Laughlin, Simon B; Niven, Jeremy E

2017-04-01

Voltage-dependent conductances in many spiking neurons are tuned to reduce action potential energy consumption, so improving the energy efficiency of spike coding. However, the contribution of voltage-dependent conductances to the energy efficiency of analogue coding, by graded potentials in dendrites and non-spiking neurons, remains unclear. We investigate the contribution of voltage-dependent conductances to the energy efficiency of analogue coding by modelling blowfly R1-6 photoreceptor membrane. Two voltage-dependent delayed rectifier K + conductances (DRs) shape the membrane's voltage response and contribute to light adaptation. They make two types of energy saving. By reducing membrane resistance upon depolarization they convert the cheap, low bandwidth membrane needed in dim light to the expensive high bandwidth membrane needed in bright light. This investment of energy in bandwidth according to functional requirements can halve daily energy consumption. Second, DRs produce negative feedback that reduces membrane impedance and increases bandwidth. This negative feedback allows an active membrane with DRs to consume at least 30% less energy than a passive membrane with the same capacitance and bandwidth. Voltage-dependent conductances in other non-spiking neurons, and in dendrites, might be organized to make similar savings. © 2017 The Author(s).

Rectifying and photovoltaic properties of the heterojunction composed of CaMnO3 and Nb-doped SrTiO3

NASA Astrophysics Data System (ADS)

Sun, J. R.; Zhang, S. Y.; Shen, B. G.; Wong, H. K.

2005-01-01

A heterojunction composed of CaMnO3 (CMO) and Nb-doped SrTiO3 (STON) was fabricated and its properties were studied and compared with La0.67Ca0.33MnO3/STON and LaMnO3+δ/STON p-n, junctions. This CMO/STON junction exhibits an asymmetric current-voltage relation similar to a p-n junction. The most remarkable discovery is that the magnetic state of the manganites has a strong impact on the rectifying behaviors. The diffusion voltage, which is the critical voltage for the current rush, shows a tendency to decrease/increase with the establishment of the antiferromagnetic/ferromagnetic order in the manganites of the junction. Similar to other manganite p-n junctions, CMO/STON also exhibits a significant photovoltaic effect, and the maximum photovoltage is ˜2.2mV under the illumination of ˜7mW light (λ=460nm). A qualitative explanation is given based on an analysis on the band diagram of the junctions.

A linearly controlled direct-current power source for high-current inductive loads in a magnetic suspension wind tunnel

NASA Technical Reports Server (NTRS)

Tripp, John S.; Daniels, Taumi S.

1990-01-01

The NASA Langley 6 inch magnetic suspension and balance system (MSBS) requires an independently controlled bidirectional DC power source for each of six positioning electromagnets. These electromagnets provide five-degree-of-freedom control over a suspended aerodynamic test model. Existing power equipment, which employs resistance coupled thyratron controlled rectifiers as well as AC to DC motor generator converters, is obsolete, inefficient, and unreliable. A replacement six phase bidirectional controlled bridge rectifier is proposed, which employs power MOSFET switches sequenced by hybrid analog/digital circuits. Full load efficiency is 80 percent compared to 25 percent for the resistance coupled thyratron system. Current feedback provides high control linearity, adjustable current limiting, and current overload protection. A quenching circuit suppresses inductive voltage impulses. It is shown that 20 kHz interference from positioning magnet power into MSBS electromagnetic model position sensors results predominantly from capacitively coupled electric fields. Hence, proper shielding and grounding techniques are necessary. Inductively coupled magnetic interference is negligible.

Electrical transport characterization of PEDOT:PSS/n-Si Schottky diodes and their applications in solar cells.

PubMed

Khurelbaatar, Zagarzusem; Hyung, Jung-Hwan; Kim, Gil-Sung; Park, No-Won; Shim, Kyu-Hwan; Lee, Sang-Kwon

2014-06-01

We demonstrate locally contacted PEDOT:PSS Schottky diodes with excellent rectifying behavior, fabricated on n-type Si substrates using a spin-coating process and a reactive-ion etching process. Electrical transport characterizations of these Schottky diodes were investigated by both current-voltage (I-V) and capacitance-voltage (C-V) measurements. We found that these devices exhibit excellent modulation in the current with an on/off ratio of - 10(6). Schottky junction solar cells composed of PEDOT:PSS and n-Si structures were also examined. From the current density-voltage (J-V) measurement of a solar cell under illumination, the short circuit current (I(sc)), open circuit voltage (V(oc)), and conversion efficiency (eta) were - 19.7 mA/cm2, - 578.5 mV, and - 6.5%, respectively. The simple and low-cost fabrication process of the PEDOT:PSS/n-Si Schottky junctions makes them a promising candidate for further high performance solar cell applications.

GROUND CLEARANCE INDICATOR

DOEpatents

Skinner, L.V.

1959-09-29

A narrow-band frequency-modulated distance measuring system is described. Reflected wave energy is fed into a mixer circuit together with a direct wave energy portion from the transmitter. These two input signals are out of phase by an amount proportional to the distance. Two band pass filter s select two different frequency components (both multiples of transmitter modulation frequency) from the beat frequency. These component frequencies are rectified and their voltage values, which are representative of those frequencies, are compared. It has been found that these voltages will have equal values producing a null output only when an object attains a preselected distance. The null output may be utilized to operate a normally closed relay, for example. At other ranges the voltage comparison will yield a voltage sufficient to keep the relay energized. Ranges may be changed by varying the degree of modulation of the transmitter carrier frequency. A particular advantage of this system lies in its high degree of accuracy throughout a range of distances approaching zero as a minimum.

Understanding of self-terminating pulse generation using silicon controlled rectifier and RC load

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Chris, E-mail: chrischang81@gmail.com; Karunasiri, Gamani, E-mail: karunasiri@nps.edu; Alves, Fabio, E-mail: falves@alionscience.com

2016-01-15

Recently a silicon controlled rectifier (SCR)-based circuit that generates self-terminating voltage pulses was employed for the detection of light and ionizing radiation in pulse mode. The circuit consisted of a SCR connected in series with a RC load and DC bias. In this paper, we report the investigation of the physics underlying the pulsing mechanism of the SCR-based. It was found that during the switching of SCR, the voltage across the capacitor increased beyond that of the DC bias, thus generating a reverse current in the circuit, which helped to turn the SCR off. The pulsing was found to bemore » sustainable only for a specific range of RC values depending on the SCR’s intrinsic turn-on/off times. The findings of this work will help to design optimum SCR based circuits for pulse mode detection of light and ionizing radiation without external amplification circuitry.« less

An Alternating Current Electroosmotic Pump Based on Conical Nanopore Membranes.

PubMed

Wu, Xiaojian; Ramiah Rajasekaran, Pradeep; Martin, Charles R

2016-04-26

Electroosmotic flow (EOF) is used to pump solutions through microfluidic devices and capillary electrophoresis columns. We describe here an EOF pump based on membrane EOF rectification, an electrokinetic phenomenon we recently described. EOF rectification requires membranes with asymmetrically shaped pores, and conical pores in a polymeric membrane were used here. We show here that solution flow through the membrane can be achieved by applying a symmetrical sinusoidal voltage waveform across the membrane. This is possible because the alternating current (AC) carried by ions through the pore is rectified, and we previously showed that rectified currents yield EOF rectification. We have investigated the effect of both the magnitude and frequency of the voltage waveform on flow rate through the membrane, and we have measured the maximum operating pressure. Finally, we show that operating in AC mode offers potential advantages relative to conventional DC-mode EOF pumps.

Biasing, operation and parasitic current limitation in single device equivalent to CMOS, and other semiconductor systems

DOEpatents

Welch, James D.

2003-09-23

Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of applied gate voltage field induced carriers in essentially intrinsic, essentially homogeneously simultaneously containing both N and P-type metallurgical dopants at substantially equal doping levels, essentially homogeneously simultaneously containing both N and P-type metallurgical dopants at different doping levels, and containing a single metallurgical doping type, and functional combinations thereof. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents utilizing material(s) which form rectifying junctions with both N and P-type semiconductor whether metallurigically or field induced.

Solid state light source driver establishing buck or boost operation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palmer, Fred

A solid state light source driver circuit that operates in either a buck convertor or a boost convertor configuration is provided. The driver circuit includes a controller, a boost switch circuit and a buck switch circuit, each coupled to the controller, and a feedback circuit, coupled to the light source. The feedback circuit provides feedback to the controller, representing a DC output of the driver circuit. The controller controls the boost switch circuit and the buck switch circuit in response to the feedback signal, to regulate current to the light source. The controller places the driver circuit in its boostmore » converter configuration when the DC output is less than a rectified AC voltage coupled to the driver circuit at an input node. The controller places the driver circuit in its buck converter configuration when the DC output is greater than the rectified AC voltage at the input node.« less

MIS diode structure in As/+/ implanted CdS

NASA Technical Reports Server (NTRS)

Hutchby, J. A.

1977-01-01

Structure made by As implantation of carefully prepared high-conductivity CdS surfaces followed by Pt deposition and 450 C anneal display rectifying, although substantially different, I-V characteristics in the dark and during illumination with subband-gap light. Structures prepared in the same way on an unimplanted portion of the substrate have similar I-V characteristics, except that the forward turnover voltage for an illuminated unimplanted diode is much smaller than that for an implanted diode. It is suggested that the charge conduction in both structures is dominated by hole and/or electron tunneling through a metal-semiconductor potential barrier. The tunneling processes appear to be quite sensitive to subband-gap illumination, which causes the dramatic decreases of turnover voltages and apparent series resistances. The difference in turnover voltage appears to be caused by interface states between the Pt electrode and the implanted layer, which suggests a MIS model.

p - n Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurchak, Anatolii I.; Eliseev, Eugene A.; Kalinin, Sergei V.

The p - n junction dynamics induced in a graphene channel by stripe-domain nucleation, motion, and reversal in a ferroelectric substrate is explored using a self-consistent approach based on Landau-Ginzburg-Devonshire phenomenology combined with classical electrostatics. Relatively low gate voltages are required to induce the hysteresis of ferroelectric polarization and graphene charge in response to the periodic gate voltage. Pronounced nonlinear hysteresis of graphene conductance with a wide memory window corresponds to high amplitudes of gate voltage. Also, we reveal the extrinsic size effect in the dependence of the graphene-channel conductivity on its length. We predict that the top-gate–dielectric-layer–graphene-channel–ferroelectric-substrate nanostructure consideredmore » here can be a promising candidate for the fabrication of the next generation of modulators and rectifiers based on the graphene p - n junctions.« less

Generator voltage stabilisation for series-hybrid electric vehicles.

PubMed

Stewart, P; Gladwin, D; Stewart, J; Cowley, R

2008-04-01

This paper presents a controller for use in speed control of an internal combustion engine for series-hybrid electric vehicle applications. Particular reference is made to the stability of the rectified DC link voltage under load disturbance. In the system under consideration, the primary power source is a four-cylinder normally aspirated gasoline internal combustion engine, which is mechanically coupled to a three-phase permanent magnet AC generator. The generated AC voltage is subsequently rectified to supply a lead-acid battery, and permanent magnet traction motors via three-phase full bridge power electronic inverters. Two complementary performance objectives exist. Firstly to maintain the internal combustion engine at its optimal operating point, and secondly to supply a stable 42 V supply to the traction drive inverters. Achievement of these goals minimises the transient energy storage requirements at the DC link, with a consequent reduction in both weight and cost. These objectives imply constant velocity operation of the internal combustion engine under external load disturbances and changes in both operating conditions and vehicle speed set-points. An electronically operated throttle allows closed loop engine velocity control. System time delays and nonlinearities render closed loop control design extremely problematic. A model-based controller is designed and shown to be effective in controlling the DC link voltage, resulting in the well-conditioned operation of the hybrid vehicle.

Tuning of optical and electrical properties of wide band gap Fe:SnO2/Li:NiO p- n junctions using 80 MeV oxygen ion beam

NASA Astrophysics Data System (ADS)

Mistry, Bhaumik V.; Avasthi, D. K.; Joshi, U. S.

2016-12-01

Electrical and optical properties of pristine and swift heavy ion (SHI) irradiated p- n junction diode have been investigated for advanced electronics application. Fe:SnO2/Li:NiO p- n junction was fabricated by using pulsed laser deposition on c-sapphire substrate. The optical band gaps of Fe:SnO2 and Li:NiO films were obtained to be 3.88 and 3.37 eV, respectively. The current-voltage characteristics of the oxide-based p- n junction showed a rectifying behaviour with turn-on voltage of 0.95 V. The oxide-based p- n junction diode was irradiated to 80 MeV O+6 ions with 1 × 1012 ions/cm2 fluence. Decrease in grain size due to SHI irradiation is confirmed by the grazing angle X-ray diffraction and atomic force microscopy. In comparison with the pristine p- n junction diode, O+6 ion irradiated p-n junction diode shows the increase of surface roughness and decrease of percentage transmittance in visible region. For irradiated p- n junction diode, current-voltage curve has still rectifying behaviour but exhibits lower turn-on voltage than that of virgin p- n junction diode.

A Transformerless Hybrid Active Filter Capable of Complying with Harmonic Guidelines for Medium-Voltage Motor Drives

NASA Astrophysics Data System (ADS)

Kondo, Ryota; Akagi, Hirofumi

This paper presents a transformerless hybrid active filter that is integrated into medium-voltage adjustable-speed motor drives for fans, pumps, and compressors without regenerative braking. The authors have designed and constructed a three-phase experimental system rated at 400V and 15kW, which is a downscaled model from a feasible 6.6-kV 1-MW motor drive system. This system consists of the hybrid filter connecting a passive filter tuned to the 7th harmonic filter in series with an active filter that is based on a three-level diode-clamped PWM converter, as well as an adjustable-speed motor drive in which a diode rectifier is used as the front end. The hybrid filter is installed on the ac side of the diode rectifier with no line-frequency transformer. The downscaled system has been exclusively tested so as to confirm the overall compensating performance of the hybrid filter and the filtering performance of a switching-ripple filter for mitigating switching-ripple voltages produced by the active filter. Experimental results verify that the hybrid filter achieves harmonic compensation of the source current in all the operating regions from no-load to the rated-load conditions, and that the switching-ripple filter reduces the switching-ripple voltages as expected.

Fast inactivation of delayed rectifier K conductance in squid giant axon and its cell bodies.

PubMed

Mathes, C; Rosenthal, J J; Armstrong, G M; Gilly, W F

1997-04-01

Inactivation of delayed rectifier K conductance (gk) was studied in squid giant axons and in the somata of giant fiber lobe (GFL) neurons. Axon measurements were made with an axial wire voltage clamp by pulsing to VK (approximately -10 mV in 50-70 mM external K) for a variable time and then assaying available gK with a strong, brief test pulse. GFL cells were studied with whole-cell patch clamp using the same prepulse procedure as well as with long depolarizations. Under our experimental conditions (12-18 degrees C, 4 mM internal MgATP) a large fraction of gK inactivates within 250 ms at -10 mV in both cell bodies and axons, although inactivation tends to be more complete in cell bodies. Inactivation in both preparations shows two kinetic components. The faster component is more temperature-sensitive and becomes very prominent above 12 degrees C. Contribution of the fast component to inactivation shows a similar voltage dependence to that of gK, suggesting a strong coupling of this inactivation path to the open state. Omission of internal MgATP or application of internal protease reduces the amount of fast inactivation. High external K decreases the amount of rapidly inactivating IK but does not greatly alter inactivation kinetics. Neither external nor internal tetraethylammonium has a marked effect on inactivation kinetics. Squid delayed rectifier K channels in GFL cell bodies and giant axons thus share complex fast inactivation properties that do not closely resemble those associated with either C-type or N-type inactivation of cloned Kvl channels studied in heterologous expression systems.

Fast Inactivation of Delayed Rectifier K Conductance in Squid Giant Axon and Its Cell Bodies

PubMed Central

Mathes, Chris; Rosenthal, Joshua J.C.; Armstrong, Clay M.; Gilly, William F.

1997-01-01

Inactivation of delayed rectifier K conductance (gK) was studied in squid giant axons and in the somata of giant fiber lobe (GFL) neurons. Axon measurements were made with an axial wire voltage clamp by pulsing to VK (∼−10 mV in 50–70 mM external K) for a variable time and then assaying available gK with a strong, brief test pulse. GFL cells were studied with whole-cell patch clamp using the same prepulse procedure as well as with long depolarizations. Under our experimental conditions (12–18°C, 4 mM internal MgATP) a large fraction of gK inactivates within 250 ms at −10 mV in both cell bodies and axons, although inactivation tends to be more complete in cell bodies. Inactivation in both preparations shows two kinetic components. The faster component is more temperature-sensitive and becomes very prominent above 12°C. Contribution of the fast component to inactivation shows a similar voltage dependence to that of gK, suggesting a strong coupling of this inactivation path to the open state. Omission of internal MgATP or application of internal protease reduces the amount of fast inactivation. High external K decreases the amount of rapidly inactivating IK but does not greatly alter inactivation kinetics. Neither external nor internal tetraethylammonium has a marked effect on inactivation kinetics. Squid delayed rectifier K channels in GFL cell bodies and giant axons thus share complex fast inactivation properties that do not closely resemble those associated with either C-type or N-type inactivation of cloned Kv1 channels studied in heterologous expression systems. PMID:9101403

Maximum Power Point Tracking Control of Hydrokinetic Turbine and Low-speed High-Thrust Permanent Magnet Generator Design

DTIC Science & Technology

2012-01-01

Schematic of the generator and power converters built in PLECS ............. 26 Figure 3.12. Block diagram of the MPPT control built in Matlab/Simulink...validated by simulation results done in Matlab/Simulink R2010a and PLECS . Figure 3.9 shows the block diagram of the hydrokinetic system built in Matlab...rectifier, boost converter and battery model built in PLECS . The battery bank on the load side is simulated by a constant dc voltage source. 25

Thin wire pointing method

NASA Technical Reports Server (NTRS)

Green, G.; Mattauch, R. J. (Inventor)

1983-01-01

A method is described for forming sharp tips on thin wires, in particular phosphor bronze wires of diameters such as one-thousandth inch used to contact micron size Schottky barrier diodes, which enables close control of tip shape and which avoids the use of highly toxic solutions. The method includes dipping an end of a phosphor bronze wire into a dilute solution of sulfamic acid and applying a current through the wire to electrochemically etch it. The humidity in the room is controlled to a level of less than 50%, and the voltage applied between the wire and another electrode in the solutions is a half wave rectified voltage. The current through the wire is monitored, and the process is stopped when the current falls to a predetermined low level.

Unity power factor switching regulator

NASA Technical Reports Server (NTRS)

Rippel, Wally E. (Inventor)

1983-01-01

A single or multiphase boost chopper regulator operating with unity power factor, for use such as to charge a battery is comprised of a power section for converting single or multiphase line energy into recharge energy including a rectifier (10), one inductor (L.sub.1) and one chopper (Q.sub.1) for each chopper phase for presenting a load (battery) with a current output, and duty cycle control means (16) for each chopper to control the average inductor current over each period of the chopper, and a sensing and control section including means (20) for sensing at least one load parameter, means (22) for producing a current command signal as a function of said parameter, means (26) for producing a feedback signal as a function of said current command signal and the average rectifier voltage output over each period of the chopper, means (28) for sensing current through said inductor, means (18) for comparing said feedback signal with said sensed current to produce, in response to a difference, a control signal applied to the duty cycle control means, whereby the average inductor current is proportionate to the average rectifier voltage output over each period of the chopper, and instantaneous line current is thereby maintained proportionate to the instantaneous line voltage, thus achieving a unity power factor. The boost chopper is comprised of a plurality of converters connected in parallel and operated in staggered phase. For optimal harmonic suppression, the duty cycles of the switching converters are evenly spaced, and by negative coupling between pairs 180.degree. out-of-phase, peak currents through the switches can be reduced while reducing the inductor size and mass.

Pseudomonas fluorescens lipopolysaccharide inhibits both delayed rectifier and transient A-type K+ channels of cultured rat cerebellar granule neurons.

PubMed

Mezghani-Abdelmoula, Sana; Chevalier, Sylvie; Lesouhaitier, Olivier; Orange, Nicole; Feuilloley, Marc G J; Cazin, Lionel

2003-09-05

Pseudomonas fluorescens is a Gram-negative bacillus closely related to the pathogen P. aeruginosa known to provoke infectious disorders in the central nervous system (CNS). The endotoxin lipopolysaccharide (LPS) expressed by the bacteria is the first infectious factor that can interact with the plasma membrane of host cells. In the present study, LPS extracted from P. fluorescens MF37 was examined for its actions on delayed rectifier and A-type K(+) channels, two of the main types of voltage-activated K(+) channels involved in the action potential firing. Current recordings were performed in cultured rat cerebellar granule neurons at days 7 or 8, using the whole-cell patch-clamp technique. A 3-h incubation with LPS (200 ng/ml) markedly depressed both the delayed rectifier (I(KV)) and transient A-type (I(A)) K(+) currents evoked by depolarizations above 0 and -40 mV, respectively. The percent decrease of I(KV) and I(A) ( approximately 30%) did not vary with membrane potential, suggesting that inhibition of both types of K(+) channels by LPS was voltage-insensitive. The endotoxin did neither modify the steady-state voltage-dependent activation properties of I(KV) and I(A) nor the steady-state inactivation of I(A). The present results suggest that, by inhibiting I(KV) and I(A), LPS applied extracellulary increases the action potential firing in cerebellar granule neurons. It is concluded that P. fluorescens MF37 may provoke in the CNS disorders associated with sever alterations of membrane ionic channel functions.

Inhibition of human ether-a-go-go-related gene K+ channel and IKr of guinea pig cardiomyocytes by antipsychotic drug trifluoperazine.

PubMed

Choi, Se-Young; Koh, Young-Sang; Jo, Su-Hyun

2005-05-01

Trifluoperazine, a commonly used antipsychotic drug, has been known to induce QT prolongation and torsades de pointes, which can cause sudden death. We studied the effects of trifluoperazine on the human ether-a-go-go-related gene (HERG) channel expressed in Xenopus oocytes and on the delayed rectifier K(+) current of guinea pig cardiomyocytes. The application of trifluoperazine showed a dose-dependent decrease in current amplitudes at the end of voltage steps and tail currents of HERG. The IC(50) for a trifluoperazine block of HERG current progressively decreased according to depolarization: IC(50) values at -40, 0, and +40 mV were 21.6, 16.6, and 9.29 microM, respectively. The voltage dependence of the block could be fitted with a monoexponential function, and the fractional electrical distance was estimated to be delta = 0.65. The block of HERG by trifluoperazine was use-dependent, exhibiting more rapid onset and greater steady-state block at higher frequencies of activation; there was partial relief of the block with decreasing frequency. In guinea pig ventricular myocytes, bath applications of 0.5 and 2 microM trifluoperazine at 36 degrees C blocked the rapidly activating delayed rectifier K(+) current by 32.4 and 72.9%, respectively; however, the same concentrations of trifluoperazine failed to significantly block the slowly activating delayed rectifier K(+) current. Our findings suggest the arrhythmogenic side effect of trifluoperazine is caused by a blockade of HERG and the rapid component of the delayed rectifier K(+) current rather than by the blockade of the slow component.

Development of a Compact Rectenna for Wireless Powering of a Head-Mountable Deep Brain Stimulation Device.

PubMed

Hosain, M D Kamal; Kouzani, Abbas Z; Tye, Susannah J; Abulseoud, Osama A; Amiet, Andrew; Galehdar, Amir; Kaynak, Akif; Berk, Michael

2014-01-01

Design of a rectangular spiral planar inverted-F antenna (PIFA) at 915 MHz for wireless power transmission applications is proposed. The antenna and rectifying circuitry form a rectenna, which can produce dc power from a distant radio frequency energy transmitter. The generated dc power is used to operate a low-power deep brain stimulation pulse generator. The proposed antenna has the dimensions of 10 mm [Formula: see text]12.5 mm [Formula: see text]1.5 mm and resonance frequency of 915 MHz with a measured bandwidth of 15 MHz at return loss of [Formula: see text]. A dielectric substrate of FR-4 of [Formula: see text] and [Formula: see text] with thickness of 1.5 mm is used for both antenna and rectifier circuit simulation and fabrication because of its availability and low cost. An L-section impedance matching circuit is used between the PIFA and voltage doubler rectifier. The impedance matching circuit also works as a low-pass filter for elimination of higher order harmonics. Maximum dc voltage at the rectenna output is 7.5 V in free space and this rectenna can drive a deep brain stimulation pulse generator at a distance of 30 cm from a radio frequency energy transmitter, which transmits power of 26.77 dBm.

The Role of Potassium Channels in Arabidopsis thaliana Long Distance Electrical Signalling: AKT2 Modulates Tissue Excitability While GORK Shapes Action Potentials.

PubMed

Cuin, Tracey Ann; Dreyer, Ingo; Michard, Erwan

2018-03-21

Fast responses to an external threat depend on the rapid transmission of signals through a plant. Action potentials (APs) are proposed as such signals. Plant APs share similarities with their animal counterparts; they are proposed to depend on the activity of voltage-gated ion channels. Nonetheless, despite their demonstrated role in (a)biotic stress responses, the identities of the associated voltage-gated channels and transporters remain undefined in higher plants. By demonstrating the role of two potassium-selective channels in Arabidopsis thaliana in AP generation and shaping, we show that the plant AP does depend on similar Kv -like transport systems to those of the animal signal. We demonstrate that the outward-rectifying potassium-selective channel GORK limits the AP amplitude and duration, while the weakly-rectifying channel AKT2 affects membrane excitability. By computational modelling of plant APs, we reveal that the GORK activity not only determines the length of an AP but also the steepness of its rise and the maximal amplitude. Thus, outward-rectifying potassium channels contribute to both the repolarisation phase and the initial depolarisation phase of the signal. Additionally, from modelling considerations we provide indications that plant APs might be accompanied by potassium waves, which prime the excitability of the green cable.

Performance analysis of electronic power transformer based on neuro-fuzzy controller.

PubMed

Acikgoz, Hakan; Kececioglu, O Fatih; Yildiz, Ceyhun; Gani, Ahmet; Sekkeli, Mustafa

2016-01-01

In recent years, electronic power transformer (EPT), which is also called solid state transformer, has attracted great interest and has been used in place of the conventional power transformers. These transformers have many important functions as high unity power factor, low harmonic distortion, constant DC bus voltage, regulated output voltage and compensation capability. In this study, proposed EPT structure contains a three-phase pulse width modulation rectifier that converts 800 Vrms AC to 2000 V DC bus at input stage, a dual active bridge converter that provides 400 V DC bus with 5:1 high frequency transformer at isolation stage and a three-phase two level inverter that is used to obtain AC output at output stage. In order to enhance dynamic performance of EPT structure, neuro fuzzy controllers which have durable and nonlinear nature are used in input and isolation stages instead of PI controllers. The main aim of EPT structure with the proposed controller is to improve the stability of power system and to provide faster response against disturbances. Moreover, a number of simulation results are carried out to verify EPT structure designed in MATLAB/Simulink environment and to analyze compensation ability for voltage harmonics, voltage flicker and voltage sag/swell conditions.

Central action of dendrotoxin: selective reduction of a transient K conductance in hippocampus and binding to localized acceptors.

PubMed

Halliwell, J V; Othman, I B; Pelchen-Matthews, A; Dolly, J O

1986-01-01

Dendrotoxin, a small single-chain protein from the venom of Dendroaspis angusticeps, is highly toxic following intracerebroventricular injection into rats. Voltage-clamp analysis of CA1 neurons in hippocampal slices, treated with tetrodotoxin, revealed that nanomolar concentrations of dendrotoxin reduce selectively a transient, voltage-dependent K conductance. Epileptiform activity known to be induced by dendrotoxin can be attributed to such an action. Membrane currents not affected directly by the toxin include (i) Ca-activated K conductance; (ii) noninactivating voltage-dependent K conductance; (iii) inactivating and noninactivating Ca conductances; (iv) persistent inward (anomalous) rectifier current. Persistence of the effects of the toxin when Cd was included to suppress spontaneous transmitter release indicates a direct action on the neuronal membrane. Using biologically active, 125I-labeled dendrotoxin, protein acceptor sites of high affinity were detected on cerebrocortical synaptosomal membranes and sections of rat brain. In hippocampus, toxin binding was shown autoradiographically to reside in synapse-rich and white matter regions, with lower levels in cell body layers. This acceptor is implicated in the action of toxin because its affinities for dendrotoxin congeners are proportional to their central neurotoxicities and potencies in reducing the transient, voltage-dependent K conductance.

Field-effect transistors as electrically controllable nonlinear rectifiers for the characterization of terahertz pulses

NASA Astrophysics Data System (ADS)

Lisauskas, Alvydas; Ikamas, Kestutis; Massabeau, Sylvain; Bauer, Maris; ČibiraitÄ--, DovilÄ--; Matukas, Jonas; Mangeney, Juliette; Mittendorff, Martin; Winnerl, Stephan; Krozer, Viktor; Roskos, Hartmut G.

2018-05-01

We propose to exploit rectification in field-effect transistors as an electrically controllable higher-order nonlinear phenomenon for the convenient monitoring of the temporal characteristics of THz pulses, for example, by autocorrelation measurements. This option arises because of the existence of a gate-bias-controlled super-linear response at sub-threshold operation conditions when the devices are subjected to THz radiation. We present measurements for different antenna-coupled transistor-based THz detectors (TeraFETs) employing (i) AlGaN/GaN high-electron-mobility and (ii) silicon CMOS field-effect transistors and show that the super-linear behavior in the sub-threshold bias regime is a universal phenomenon to be expected if the amplitude of the high-frequency voltage oscillations exceeds the thermal voltage. The effect is also employed as a tool for the direct determination of the speed of the intrinsic TeraFET response which allows us to avoid limitations set by the read-out circuitry. In particular, we show that the build-up time of the intrinsic rectification signal of a patch-antenna-coupled CMOS detector changes from 20 ps in the deep sub-threshold voltage regime to below 12 ps in the vicinity of the threshold voltage.

PEAK READING VOLTMETER

DOEpatents

Dyer, A.L.

1958-07-29

An improvement in peak reading voltmeters is described, which provides for storing an electrical charge representative of the magnitude of a transient voltage pulse and thereafter measuring the stored charge, drawing oniy negligible energy from the storage element. The incoming voltage is rectified and stored in a condenser. The voltage of the capacitor is applied across a piezoelectric crystal between two parallel plates. Amy change in the voltage of the capacitor is reflected in a change in the dielectric constant of the crystal and the capacitance between a second pair of plates affixed to the crystal is altered. The latter capacitor forms part of the frequency determlning circuit of an oscillator and means is provided for indicating the frequency deviation which is a measure of the peak voltage applied to the voltmeter.

Power supply circuit for an ion engine sequentially operated power inverters

NASA Technical Reports Server (NTRS)

Cardwell, Jr., Gilbert I. (Inventor)

2000-01-01

A power supply circuit for an ion engine suitable for a spacecraft has a voltage bus having input line and a return line. The power supply circuit includes a pulse width modulation circuit. A plurality of bridge inverter circuits is coupled to the bus and the pulse width modulation circuit. The pulse width modulation circuit generates operating signals having a variable duty cycle. Each bridge inverter has a primary winding and a secondary winding. Each secondary winding is coupled to a rectifier bridge. Each secondary winding is coupled in series with another of the plurality of rectifier bridges.

A Novel Passive Wireless Sensor for Concrete Humidity Monitoring.

PubMed

Zhou, Shuangxi; Deng, Fangming; Yu, Lehua; Li, Bing; Wu, Xiang; Yin, Baiqiang

2016-09-20

This paper presents a passive wireless humidity sensor for concrete monitoring. After discussing the transmission of electromagnetic wave in concrete, a novel architecture of wireless humidity sensor, based on Ultra-High Frequency (UHF) Radio Frequency Identification (RFID) technology, is proposed for low-power application. The humidity sensor utilizes the top metal layer to form the interdigitated electrodes, which were then filled with polyimide as the humidity sensing layer. The sensor interface converts the humidity capacitance into a digital signal in the frequency domain. A two-stage rectifier adopts a dynamic bias-voltage generator to boost the effective gate-source voltage of the switches in differential-drive architecture. The clock generator employs a novel structure to reduce the internal voltage swing. The measurement results show that our proposed wireless humidity can achieve a high linearity with a normalized sensitivity of 0.55% %RH at 20 °C. Despite the high losses of concrete, the proposed wireless humidity sensor achieves reliable communication performances in passive mode. The maximum operating distance is 0.52 m when the proposed wireless sensor is embedded into the concrete at the depth of 8 cm. The measured results are highly consistent with the results measured by traditional methods.

A Novel Passive Wireless Sensor for Concrete Humidity Monitoring

PubMed Central

Zhou, Shuangxi; Deng, Fangming; Yu, Lehua; Li, Bing; Wu, Xiang; Yin, Baiqiang

2016-01-01

This paper presents a passive wireless humidity sensor for concrete monitoring. After discussing the transmission of electromagnetic wave in concrete, a novel architecture of wireless humidity sensor, based on Ultra-High Frequency (UHF) Radio Frequency Identification (RFID) technology, is proposed for low-power application. The humidity sensor utilizes the top metal layer to form the interdigitated electrodes, which were then filled with polyimide as the humidity sensing layer. The sensor interface converts the humidity capacitance into a digital signal in the frequency domain. A two-stage rectifier adopts a dynamic bias-voltage generator to boost the effective gate-source voltage of the switches in differential-drive architecture. The clock generator employs a novel structure to reduce the internal voltage swing. The measurement results show that our proposed wireless humidity can achieve a high linearity with a normalized sensitivity of 0.55% %RH at 20 °C. Despite the high losses of concrete, the proposed wireless humidity sensor achieves reliable communication performances in passive mode. The maximum operating distance is 0.52 m when the proposed wireless sensor is embedded into the concrete at the depth of 8 cm. The measured results are highly consistent with the results measured by traditional methods. PMID:27657070

Heating performances of a IC in-blanket ring array

NASA Astrophysics Data System (ADS)

Bosia, G.; Ragona, R.

2015-12-01

An important limiting factor to the use of ICRF as candidate heating method in a commercial reactor is due to the evanescence of the fast wave in vacuum and in most of the SOL layer, imposing proximity of the launching structure to the plasma boundary and causing, at the highest power level, high RF standing and DC rectified voltages at the plasma periphery, with frequent voltage breakdowns and enhanced local wall loading. In a previous work [1] the concept for an Ion Cyclotron Heating & Current Drive array (and using a different wave guide technology, a Lower Hybrid array) based on the use of periodic ring structure, integrated in the reactor blanket first wall and operating at high input power and low power density, was introduced. Based on the above concept, the heating performance of such array operating on a commercial fusion reactor is estimated.

Heating performances of a IC in-blanket ring array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bosia, G., E-mail: gbosia@to.infn.it; Ragona, R.

2015-12-10

An important limiting factor to the use of ICRF as candidate heating method in a commercial reactor is due to the evanescence of the fast wave in vacuum and in most of the SOL layer, imposing proximity of the launching structure to the plasma boundary and causing, at the highest power level, high RF standing and DC rectified voltages at the plasma periphery, with frequent voltage breakdowns and enhanced local wall loading. In a previous work [1] the concept for an Ion Cyclotron Heating & Current Drive array (and using a different wave guide technology, a Lower Hybrid array) basedmore » on the use of periodic ring structure, integrated in the reactor blanket first wall and operating at high input power and low power density, was introduced. Based on the above concept, the heating performance of such array operating on a commercial fusion reactor is estimated.« less

Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2011-01-01

The majority of solid tantalum capacitors are produced by high-temperature sintering of a fine tantalum powder around a tantalum wire followed by electrolytic anodization that forms a thin amorphous Ta2O5 dielectric layer and pyrolysis of manganese nitrite on the oxide to create a conductive manganese dioxide electrode. A contact to tantalum wire is used as anode terminal and to the manganese layer as a cathode terminal of the device. This process results in formation of an asymmetric Ta -- Ta2O5 -- MnO2 capacitor that has different characteristics at forward (positive bias applied to tantalum) and reverse (positive bias applied to manganese cathode) voltages. Reverse bias currents might be several orders of magnitude larger than forward leakage currents so I-V characteristics of tantalum capacitors resemble characteristics of semiconductor rectifiers. Asymmetric I-V characteristics of Ta -- anodic Ta2O5 systems have been observed at different top electrode materials including metals, electrolytes, conductive polymers, and manganese oxide thus indicating that this phenomenon is likely related to the specifics of the Ta -- Ta2O5 interface. There have been multiple attempts to explain rectifying characteristics of capacitors employing anodic tantalum pentoxide dielectrics. A brief review of works related to reverse bias (RB) behavior of tantalum capacitors shows that the mechanism of conduction in Ta -- Ta2O5 systems is still not clear and more testing and analysis is necessary to understand the processes involved. If tantalum capacitors behave just as rectifiers, then the assessment of the safe reverse bias operating conditions would be a relatively simple task. Unfortunately, these parts can degrade with time under reverse bias significantly, and this further complicates analysis of the I-V characteristics and establishing safe operating areas of the parts. On other hand, time dependence of reverse currents might provide additional information for investigation of the processes under reverse bias conditions. In practice, there were instances when, due to unforeseen events, the system operated at conditions when capacitors experience periodically a relatively small reverse bias for some time followed by normal, forward bias conditions. In such a case an assessment should be made on the degree to which these capacitors are degraded by application of low-voltage reverse bias, and whether this degradation can be reversed by normal operating conditions. In this study, reverse currents in different types of tantalum capacitors were monitored at different reverse voltages below 15%VR and temperatures in the range from room to 145 C for up to 150 hours to get better understanding of the degradation process and determine conditions favorable to the unstable mode of operation. The reversibility of RB degradation has been evaluated after operation of the capacitors at forward bias conditions. The effect of reverse bias stress (RBS) on reliability at normal operating conditions was evaluated using highly accelerated life testing at voltages of 1.5VR and 2 VR and by analysis of changes in distributions of breakdown voltages. Possible mechanisms of RB degradation are discussed.

Reliable Breakdown Obtained in Silicon Carbide Rectifiers

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1997-01-01

The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Analysis of the Optimum Gain of a High-Pass L-Matching Network for Rectennas

PubMed Central

Jordana, Josep; Robert, Francesc-Josep; Berenguer, Jordi

2017-01-01

Rectennas, which mainly consist of an antenna, matching network, and rectifier, are used to harvest radiofrequency energy in order to power tiny sensor nodes, e.g., the nodes of the Internet of Things. This paper demonstrates for the first time, the existence of an optimum voltage gain for high-pass L-matching networks used in rectennas by deriving an analytical expression. The optimum gain is that which leads to maximum power efficiency of the rectenna. Here, apart from the L-matching network, a Schottky single-diode rectifier was used for the rectenna, which was optimized at 868 MHz for a power range from −30 dBm to −10 dBm. As the theoretical expression depends on parameters not very well-known a priori, an accurate search of the optimum gain for each power level was performed via simulations. Experimental results show remarkable power efficiencies ranging from 16% at −30 dBm to 55% at −10 dBm, which are for almost all the tested power levels the highest published in the literature for similar designs. PMID:28757592

Graphene ballistic nano-rectifier with very high responsivity

PubMed Central

Auton, Gregory; Zhang, Jiawei; Kumar, Roshan Krishna; Wang, Hanbin; Zhang, Xijian; Wang, Qingpu; Hill, Ernie; Song, Aimin

2016-01-01

Although graphene has the longest mean free path of carriers of any known electronic material, very few novel devices have been reported to harness this extraordinary property. Here we demonstrate a ballistic nano-rectifier fabricated by creating an asymmetric cross-junction in single-layer graphene sandwiched between boron nitride flakes. A mobility ∼200,000 cm2 V−1 s−1 is achieved at room temperature, well beyond that required for ballistic transport. This enables a voltage responsivity as high as 23,000 mV mW−1 with a low-frequency input signal. Taking advantage of the output channels being orthogonal to the input terminals, the noise is found to be not strongly influenced by the input. Hence, the corresponding noise-equivalent power is as low as 0.64 pW Hz−1/2. Such performance is even comparable to superconducting bolometers, which however need to operate at cryogenic temperatures. Furthermore, output oscillations are observed at low temperatures, the period of which agrees with the lateral size quantization. PMID:27241162

Analysis of the Optimum Gain of a High-Pass L-Matching Network for Rectennas.

PubMed

Gasulla, Manel; Jordana, Josep; Robert, Francesc-Josep; Berenguer, Jordi

2017-07-25

Rectennas, which mainly consist of an antenna, matching network, and rectifier, are used to harvest radiofrequency energy in order to power tiny sensor nodes, e.g., the nodes of the Internet of Things. This paper demonstrates for the first time, the existence of an optimum voltage gain for high-pass L-matching networks used in rectennas by deriving an analytical expression. The optimum gain is that which leads to maximum power efficiency of the rectenna. Here, apart from the L-matching network, a Schottky single-diode rectifier was used for the rectenna, which was optimized at 868 MHz for a power range from -30 dBm to -10 dBm. As the theoretical expression depends on parameters not very well-known a priori, an accurate search of the optimum gain for each power level was performed via simulations. Experimental results show remarkable power efficiencies ranging from 16% at -30 dBm to 55% at -10 dBm, which are for almost all the tested power levels the highest published in the literature for similar designs.

Bimodal voltage dependence of TRPA1: mutations of a key pore helix residue reveal strong intrinsic voltage-dependent inactivation.

PubMed

Wan, Xia; Lu, Yungang; Chen, Xueqin; Xiong, Jian; Zhou, Yuanda; Li, Ping; Xia, Bingqing; Li, Min; Zhu, Michael X; Gao, Zhaobing

2014-07-01

Transient receptor potential A1 (TRPA1) is implicated in somatosensory processing and pathological pain sensation. Although not strictly voltage-gated, ionic currents of TRPA1 typically rectify outwardly, indicating channel activation at depolarized membrane potentials. However, some reports also showed TRPA1 inactivation at high positive potentials, implicating voltage-dependent inactivation. Here we report a conserved leucine residue, L906, in the putative pore helix, which strongly impacts the voltage dependency of TRPA1. Mutation of the leucine to cysteine (L906C) converted the channel from outward to inward rectification independent of divalent cations and irrespective to stimulation by allyl isothiocyanate. The mutant, but not the wild-type channel, displayed exclusively voltage-dependent inactivation at positive potentials. The L906C mutation also exhibited reduced sensitivity to inhibition by TRPA1 blockers, HC030031 and ruthenium red. Further mutagenesis of the leucine to all natural amino acids individually revealed that most substitutions at L906 (15/19) resulted in inward rectification, with exceptions of three amino acids that dramatically reduced channel activity and one, methionine, which mimicked the wild-type channel. Our data are plausibly explained by a bimodal gating model involving both voltage-dependent activation and inactivation of TRPA1. We propose that the key pore helix residue, L906, plays an essential role in responding to the voltage-dependent gating.

Active stabilization of ion trap radiofrequency potentials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, K. G.; Wong-Campos, J. D.; Restelli, A.

2016-05-15

We actively stabilize the harmonic oscillation frequency of a laser-cooled atomic ion confined in a radiofrequency (rf) Paul trap by sampling and rectifying the high voltage rf applied to the trap electrodes. We are able to stabilize the 1 MHz atomic oscillation frequency to be better than 10 Hz or 10 ppm. This represents a suppression of ambient noise on the rf circuit by 34 dB. This technique could impact the sensitivity of ion trap mass spectrometry and the fidelity of quantum operations in ion trap quantum information applications.

A novel wireless power and data transmission AC to DC converter for an implantable device.

PubMed

Liu, Jhao-Yan; Tang, Kea-Tiong

2013-01-01

This article presents a novel AC to DC converter implemented by standard CMOS technology, applied for wireless power transmission. This circuit combines the functions of the rectifier and DC to DC converter, rather than using the rectifier to convert AC to DC and then supplying the required voltage with regulator as in the transitional method. This modification can reduce the power consumption and the area of the circuit. This circuit also transfers the loading condition back to the external circuit by the load shift keying(LSK), determining if the input power is not enough or excessive, which increases the efficiency of the total system. The AC to DC converter is fabricated with the TSMC 90nm CMOS process. The circuit area is 0.071mm(2). The circuit can produce a 1V DC voltage with maximum output current of 10mA from an AC input ranging from 1.5V to 2V, at 1MHz to 10MHz.

Charge control microcomputer device for vehicle

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morishita, M.; Kouge, S.

1986-08-26

A charge control microcomputer device is described for a vehicle, comprising: an AC generator driven by an engine for generating an output current, the generator having armature coils and a field coil; a battery charged by a rectified output of the generator and generating a terminal voltage; a voltage regulator for controlling a current flowing in the field coil, to control an output voltage of the generator to a predetermined value; an engine controlling microcomputer for receiving engine parameter data from the engine, to control the operation of the engine; a charge control microcomputer for processing input data including datamore » on at least one engine parameter output from the engine controlling microcomputer, and charge system data including at least one of battery terminal voltage data, generator voltage data and generator output current data, to provide a reference voltage for the voltage regulator.« less

An Integrated Multilevel Converter with Sigma Delta Control for LED Lighting

NASA Astrophysics Data System (ADS)

Gerber, Daniel L.

High brightness LEDs have become a mainstream lighting technology due to their efficiency, life span, and environmental benefits. As such, the lighting industry values LED drivers with low cost, small form factor, and long life span. Additional specifications that define a high quality LED driver are high efficiency, high power factor, wide-range dimming, minimal flicker, and a galvanically isolated output. The flyback LED driver is a popular topology that satisfies all these specifications, but it requires a bulky and costly flyback transformer. In addition, its passive methods for cancelling AC power ripple require electrolytic capacitors, which have been known to have life span issues. This dissertation details the design, construction, and verification of a novel LED driver that satisfies all the specifications. In addition, it does not require a flyback transformer or electrolytic capacitors, thus marking an improvement over the flyback driver on size, cost, and life span. This dissertation presents an integrated circuit (IC) LED driver, which features a pair of generalized multilevel converters that are controlled via sigma-delta modulation. The first is a multilevel rectifier responsible for power factor correction (PFC) and dimming. The PFC rectifier employs a second order sigma-delta loop to precisely control the input current harmonics and amplitude. The second is a bidirectional multilevel inverter used to cancel AC power ripple from the DC bus. This ripple-cancellation module transfers energy to and from a storage capacitor. It uses a first order sigma-delta loop with a preprogrammed waveform to swing the storage capacitor voltage. The system also contains an output stage that powers the LEDs with DC and provides for galvanic isolation. The output stage consists of an H-bridge stack that connects to the output through a small toroid transformer. The IC LED driver was simulated and prototyped on an ABCD silicon test chip. Testing and verification indicates functional performance for all the modules in the LED driver. The driver exhibits moderate efficiency at half voltage. Although the part was only testable to half voltage, loss models predict that its efficiency would be much higher at full voltage. The driver also meets specifications on the line current harmonics and ripple cancellation. This dissertation introduces multilevel circuit techniques to the IC and LED research space. The prototype's functional performance indicates that integrated multilevel converters are a viable topology for lighting and other similar applications.

Two modes of polyamine block regulating the cardiac inward rectifier K+ current IK1 as revealed by a study of the Kir2.1 channel expressed in a human cell line.

PubMed

Ishihara, Keiko; Ehara, Tsuguhisa

2004-04-01

The strong inward rectifier K(+) current, I(K1), shows significant outward current amplitude in the voltage range near the reversal potential and thereby causes rapid repolarization at the final phase of cardiac action potentials. However, the mechanism that generates the outward I(K1) is not well understood. We recorded currents from the inside-out patches of HEK 293T cells that express the strong inward rectifier K(+) channel Kir2.1 and studied the blockage of the currents caused by cytoplasmic polyamines, namely, spermine and spermidine. The outward current-voltage (I-V) relationships of Kir2.1, obtained with 5-10 microm spermine or 10-100 microm spermidine, were similar to the steady-state outward I-V relationship of I(K1), showing a peak at a level that is approximately 20 mV more positive than the reversal potential, with a negative slope at more positive voltages. The relationships exhibited a plateau or a double-hump shape with 1 microm spermine/spermidine or 0.1 microm spermine, respectively. In the chord conductance-voltage relationships, there were extra conductances in the positive voltage range, which could not be described by the Boltzmann relations fitting the major part of the relationships. The extra conductances, which generated most of the outward currents in the presence of 5-10 microm spermine or 10-100 microm spermidine, were quantitatively explained by a model that considered two populations of Kir2.1 channels, which were blocked by polyamines in either a high-affinity mode (Mode 1 channel) or a low-affinity mode (Mode 2 channel). Analysis of the inward tail currents following test pulses indicated that the relief from the spermine block of Kir2.1 consisted of an exponential component and a virtually instantaneous component. The fractions of the two components nearly agreed with the fractions of the blockages in Mode 1 and Mode 2 calculated by the model. The estimated proportion of Mode 1 channels to total channels was 0.9 with 0.1-10 microm spermine, 0.75 with 1-100 microm spermidine, and between 0.75 and 0.9 when spermine and spermidine coexisted. An interaction of spermine/spermidine with the channel at an intracellular site appeared to modify the equilibrium of the two conformational channel states that allow different modes of blockage. Our results suggest that the outward I(K1) is primarily generated by channels with lower affinities for polyamines. Polyamines may regulate the amplitude of the outward I(K1), not only by blocking the channels but also by modifying the proportion of channels that show different sensitivities to the polyamine block.

Modelling and Simulation of Single-Phase Series Active Compensator for Power Quality Improvement

NASA Astrophysics Data System (ADS)

Verma, Arun Kumar; Mathuria, Kirti; Singh, Bhim; Bhuvaneshwari, G.

2017-10-01

A single-phase active series compensator is proposed in this work to reduce harmonic currents at the ac mains and to regulate the dc link voltage of a diode bridge rectifier (DBR) that acts as the front end converter for a voltage source inverter feeding an ac motor. This ac motor drive is used in any of the domestic, commercial or industrial appliances. Under fluctuating ac mains voltages, the dc link voltage of the DBR depicts wide variations and hence the ac motor is used at reduced rating as compared to its name-plate rating. The active series compensator proposed here provides dual functions of improving the power quality at the ac mains and regulating the dc link voltage thus averting the need for derating of the ac motor.

VEGF attenuated increase of outward delayed-rectifier potassium currents in hippocampal neurons induced by focal ischemia via PI3-K pathway.

PubMed

Wu, K W; Yang, P; Li, S S; Liu, C W; Sun, F Y

2015-07-09

We recently indicated that the vascular endothelial growth factor (VEGF) protects neurons against hypoxic death via enhancement of tyrosine phosphorylation of Kv1.2, an isoform of the delayed-rectifier potassium channels through activation of the phosphatidylinositol 3-kinase (PI3-K) signaling pathway. The present study investigated whether VEGF could attenuate ischemia-induced increase of the potassium currents in the hippocampal pyramidal neurons of rats after ischemic injury. Adult male Sprague-Dawley rats were subjected to transient middle cerebral artery occlusion (MCAO) to induce brain ischemia. The whole-cell patch-clamp technique was used to record the potassium currents of hippocampal neurons in brain slices from the ischemically injured brains of the rats 24h after MCAO. We detected that transient MCAO caused a significant increase of voltage-gated potassium currents (Kv) and outward delayed-rectifier potassium currents (IK), but not outward transient potassium currents (IA), in the ipsilateral hippocampus compared with the sham. Moreover, we found that VEGF could acutely, reversibly and voltage-dependently inhibit the ischemia-induced IK increase. This inhibitory effect of VEGF could be completely abolished by wortmannin, an inhibitor of PI3-K. Our data indicate that VEGF attenuates the ischemia-induced increase of IK via activation of the PI3-K signaling pathway. Published by Elsevier Ltd.

Nonlinear interface between the piezoelectric harvesting structure and the modulating circuit of an energy harvester with a real storage battery.

PubMed

Hu, Yuantai; Xue, Huan; Hu, Ting; Hu, Hongping

2008-01-01

This paper studies the performance of an energy harvester with a piezoelectric bimorph (PB) and a real electrochemical battery (ECB), both are connected as an integrated system through a rectified dc-dc converter (DDC). A vibrating PB can scavenge energy from the operating environment by the electromechanical coupling. A DDC can effectively match the optimal output voltage of the harvesting structure to the battery voltage. To raise the output power density of PB, a synchronized switch harvesting inductor (SSHI) is used in parallel with the harvesting structure to reverse the voltage through charge transfer between the output electrodes at the transition moments from closed-to open-circuit. Voltage reversal results in earlier arrival of rectifier conduction because the output voltage phases of any two adjacent closed-circuit states are just opposite each other. In principle, a PB is with a smaller, flexural stiffness under closed-circuit condition than under open-circuit condition. Thus, the PB subjected to longer closed-circuit condition will be easier to be accelerated. A larger flexural velocity makes the PB to deflect with larger amplitude, which implies that more mechanical energy will be converted into an electric one. Nonlinear interface between the vibrating PB and the modulating circuit is analyzed in detail, and the effects of SSHI and DDC on the charging efficiency of the storage battery are researched numerically. It was found that the introduction of a DDC in the modulating circuit and an SSHI in the harvesting structure can raise the charging efficiency by several times.

High-performance zero-bias ultraviolet photodetector based on p-GaN/n-ZnO heterojunction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Su, Longxing; Zhang, Quanlin; Chen, Mingming

2014-08-18

Lattice-match p-GaN and n-ZnO bilayers were heteroepitaxially grown on the c-sapphire substrate by metal organic chemical vapor deposition and molecular beam epitaxy technique, respectively. X-ray diffraction and photoluminescence investigations revealed the high crystal quality of the bilayer films. Subsequently, a p-GaN/n-ZnO heterojunction photodetector was fabricated. The p-n junction exhibited a clear rectifying I-V characteristic with a turn-on voltage of 3.7 V. At zero-bias voltage, the peak responsivity was 0.68 mA/W at 358 nm, which is one of the best performances reported for p-GaN/n-ZnO heterojunction detectors due to the excellent crystal quality of the bilayer films. These show that the high-performance p-GaN/n-ZnO heterojunction diodemore » is potential for applications of portable UV detectors without driving power.« less

Power processor for a 20CM ion thruster

NASA Technical Reports Server (NTRS)

Biess, J. J.; Schoenfeld, A. D.; Cohen, E.

1973-01-01

A power processor breadboard for the JPL 20CM Ion Engine was designed, fabricated, and tested to determine compliance with the electrical specification. The power processor breadboard used the silicon-controlled rectifier (SCR) series resonant inverter as the basic power stage to process all the power to the ion engine. The breadboard power processor was integrated with the JPL 20CM ion engine and complete testing was performed. The integration tests were performed without any silicon-controlled rectifier failure. This demonstrated the ruggedness of the series resonant inverter in protecting the switching elements during arcing in the ion engine. A method of fault clearing the ion engine and returning back to normal operation without elaborate sequencing and timing control logic was evolved. In this method, the main vaporizer was turned off and the discharge current limit was reduced when an overload existed on the screen/accelerator supply. After the high voltage returned to normal, both the main vaporizer and the discharge were returned to normal.

A solid-state controllable power supply for a magnetic suspension wind tunnel

NASA Technical Reports Server (NTRS)

Daniels, Taumi S.; Tripp, John S.

1991-01-01

The NASA Langley 6-inch Magnetic Suspension and Balance System (6-in. MSBS) requires an independently controlled bidirectional dc power source for each of six positioning electromagnets. These electromagnets provide five-degree-of-freedom control over a suspended aerodynamic test model. Existing power equipment, which employs resistance-coupled thyratron-controlled rectifiers as well as ac to dc motor-generator converters, is obsolete, inefficient, and unreliable. A replacement six-phase bidirectional controlled bridge rectifier is proposed, which employs power MOSFET switches sequenced by hybrid analog/digital circuits. Full-load efficiency is 80 percent compared with 25 percent for the resistance-coupled thyratron system. Current feedback provides high control linearity, adjustable current limiting, and current overload protection. A quenching circuit suppresses inductive voltage impulses. It is shown that 20-kHz interference from positioning magnet power into MSBS electromagnetic model position sensors results predominantly from capacitively coupled electric fields. Hence, proper shielding and grounding techniques are necessary. Inductively coupled magnetic interference is negligible.

Negative differential resistance and rectifying performance induced by doped graphene nanoribbons p-n device

NASA Astrophysics Data System (ADS)

Zhou, Yuhong; Qiu, Nianxiang; Li, Runwei; Guo, Zhansheng; Zhang, Jian; Fang, Junfeng; Huang, Aisheng; He, Jian; Zha, Xianhu; Luo, Kan; Yin, Jingshuo; Li, Qiuwu; Bai, Xiaojing; Huang, Qing; Du, Shiyu

2016-03-01

Employing nonequilibrium Green's Functions in combination with density functional theory, the electronic transport properties of armchair graphene nanoribbon (GNR) devices with various widths are investigated in this work. In the adopted model, two semi-infinite graphene electrodes are periodically doped with boron or nitrogen atoms. Our calculations reveal that these devices have a striking nonlinear feature and show notable negative differential resistance (NDR). The results also indicate the diode-like properties are reserved and the rectification ratios are high. It is found the electronic transport properties are strongly dependent on the width of doped nanoribbons and the positions of dopants and three distinct families are elucidated for the current armchair GNR devices. The NDR as well as rectifying properties can be well explained by the variation of transmission spectra and the relative shift of discrete energy states with applied bias voltage. These findings suggest that the doped armchair GNR is a promising candidate for the next generation nanoscale device.

Delayed rectifier K channels contribute to contrast adaptation in mammalian retinal ganglion cells

PubMed Central

Weick, Michael; Demb, Jonathan B.

2011-01-01

SUMMARY Retinal ganglion cells adapt by reducing their sensitivity during periods of high contrast. Contrast adaptation in the firing response depends on both presynaptic and intrinsic mechanisms. Here, we investigated intrinsic mechanisms for contrast adaptation in OFF Alpha ganglion cells in the in vitro guinea pig retina. Using either visual stimulation or current injection, we show that brief depolarization evoked spiking and suppressed firing during subsequent depolarization. The suppression could be explained by Na channel inactivation, as shown in salamander cells. However, brief hyperpolarization in the physiological range (5–10 mV) also suppressed firing during subsequent depolarization. This suppression was sensitive selectively to blockers of delayed-rectifier K channels (KDR). Somatic membrane patches showed TEA-sensitive KDR currents with activation near −25 mV and removal of inactivation at voltages negative to Vrest. Brief periods of hyperpolarization apparently remove KDR inactivation and thereby increase the channel pool available to suppress excitability during subsequent depolarization. PMID:21745646

An electronic circuit for sensing malfunctions in test instrumentation

NASA Technical Reports Server (NTRS)

Miller, W. M., Jr.

1969-01-01

Monitoring device differentiates between malfunctions occurring in the system undergoing test and malfunctions within the test instrumentation itself. Electronic circuits in the monitor use transistors to commutate silicon controlled rectifiers by removing the drive voltage, display circuits are then used to monitor multiple discrete lines.

Rectified Proton Grotthuss Conduction Across a Long Water-Wire in the Test Nanotube of the Polytheonamide B Channel.

PubMed

Matsuki, Yuka; Iwamoto, Masayuki; Mita, Kenichiro; Shigemi, Kenji; Matsunaga, Shigeki; Oiki, Shigetoshi

2016-03-30

A hydrogen-bonded water-chain in a nanotube is highly proton conductive, and examining the proton flux under electric fields is crucial to understanding the one-dimensional Grotthuss conduction. Here, we exploited a nanotube-forming natural product, the peptide polytheonamide B (pTB), to examine proton conduction mechanisms at a single-molecule level. The pTB nanotube has a length of ∼40 Å that spans the membrane and a uniform inner diameter of 4 Å that holds a single-file water-chain. Single-channel proton currents were measured using planar lipid bilayers in various proton concentrations and membrane potentials (±400 mV). We found, surprisingly, that the current-voltage curves were asymmetric with symmetric proton concentrations in both solutions across the membrane (rectification). The proton flux from the C-terminal to the N-terminal end was 1.6 times higher than that from the opposite. At lower proton concentrations, the degree of rectification was attenuated, but with the addition of a pH-buffer (dichloroacetate) that supplies protons near the entrance, the rectification emerged. These results indicate that the permeation processes inside the pore generate the rectification, which is masked at low concentrations by the diffusion-limited access of protons to the pore entrance. The permeation processes were characterized by a discrete-state Markov model, in which hops of a proton followed by water-chain turnovers were implemented. The optimized model revealed that the water-chain turnover exhibited unusual voltage dependence, and the distinct voltage-dependencies of the forward and backward transition rates yielded the rectification. The pTB nanotube serves as a rectified proton conductor, and the design principles can be exploited for proton-conducting materials.

Rectifying magnetic tunnel diode like behavior in Co2MnSi/ZnO/p-Si heterostructure

NASA Astrophysics Data System (ADS)

Maji, Nilay; Nath, T. K.

2018-04-01

The rectifying magnetic tunnel diode like behavior has been observed in Co2MnSi/ZnO/p-Si heterostructure. At first an ultra thin layer of ZnO has been deposited on p-Si (100) substrate with the help of pulsed laser deposition (PLD). After that a highly spin-polarized Heusler alloy Co2MnSi (CMS) film (250 nm) has been grown on ZnO/p-Si using electron beam physical vapor deposition technique. The phase purity of the sample has been confirmed through high resolution X-Ray diffraction technique. The electrical transport properties have been investigated at various isothermal conditions in the temperature range of 77-300 K. The current-voltage characteristics exhibit an excellent rectifying tunnel diode like behavior throughout the temperature regime. The current (I) across the junction has been found to decrease with the application of an external magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. The magnetic field dependent JMR behavior of our heterostructure has been investigated in the same temperature range. Our heterostructure clearly demonstrates a giant positive JMR at 78 K (˜264%) and it starts decreasing with increasing temperature. If we compare our results with earlier reported results on other heterostructures, it can be seen that the JMR value for our heterojunction saturates at a much lower external magnetic field, thus creating it a better alternative for spin tunnel diodes in upcoming spintronics device applications.

Flux pumping for non-insulated and metal-insulated HTS coils

NASA Astrophysics Data System (ADS)

Ma, Jun; Geng, Jianzhao; Coombs, T. A.

2018-01-01

High-temperature superconducting (HTS) coils wound from coated conductors without turn-to-turn insulation (non-insulated (NI) coils) have been proven with excellent electrical and thermal performances. However, the slow charging of NI coils has been a long-lasting problem. In this work, we explore using a transformer-rectifier HTS flux pump to charge an NI coil and a metal-insulated coil. The charging performance comparison is made between different coils. Comprehensive study is done to thoroughly understand the electrical-magnetic transience in charging these coils. We will show that the low-voltage high-current flux pump is especially suitable for charging NI coils with very low characteristic resistance.

Rectification of Acetylcholine-Elicited Currents in PC12 Pheochromocytoma Cells

NASA Astrophysics Data System (ADS)

Ifune, C. K.; Steinbach, J. H.

1990-06-01

The current-voltage (I-V) relationship for acetylcholine-elicited currents in the rat pheochromocytoma cell line PC12 is nonlinear. Two voltage-dependent processes that could account for the whole-cell current rectification were examined, receptor channel gating and single receptor channel permeation. We found that both factors are involved in the rectification of the whole-cell currents. The voltage dependence of channel gating determines the shape of the I-V curve at negative potentials. The single-channel I-V relationship is inwardly rectifying and largely responsible for the characteristic shape of the whole-cell I-V curve at positive potentials. The rectification of the single-channel currents is produced by the voltage-dependent block of outward currents by intracellular Mg2+ ions.

Charging system and method for multicell storage batteries

DOEpatents

Cox, Jay A.

1978-01-01

A battery-charging system includes a first charging circuit connected in series with a plurality of battery cells for controlled current charging. A second charging circuit applies a controlled voltage across each individual cell for equalization of the cells to the fully charged condition. This controlled voltage is determined at a level above the fully charged open-circuit voltage but at a sufficiently low level to prevent corrosion of cell components by electrochemical reaction. In this second circuit for cell equalization, a transformer primary receives closely regulated, square-wave voltage which is coupled to a plurality of equal secondary coil windings. Each secondary winding is connected in parallel to each cell of a series-connected pair of cells through half-wave rectifiers and a shared, intermediate conductor.

Power Quality Control and Design of Power Converter for Variable-Speed Wind Energy Conversion System with Permanent-Magnet Synchronous Generator

PubMed Central

Oğuz, Yüksel; Güney, İrfan; Çalık, Hüseyin

2013-01-01

The control strategy and design of an AC/DC/AC IGBT-PMW power converter for PMSG-based variable-speed wind energy conversion systems (VSWECS) operation in grid/load-connected mode are presented. VSWECS consists of a PMSG connected to a AC-DC IGBT-based PWM rectifier and a DC/AC IGBT-based PWM inverter with LCL filter. In VSWECS, AC/DC/AC power converter is employed to convert the variable frequency variable speed generator output to the fixed frequency fixed voltage grid. The DC/AC power conversion has been managed out using adaptive neurofuzzy controlled inverter located at the output of controlled AC/DC IGBT-based PWM rectifier. In this study, the dynamic performance and power quality of the proposed power converter connected to the grid/load by output LCL filter is focused on. Dynamic modeling and control of the VSWECS with the proposed power converter is performed by using MATLAB/Simulink. Simulation results show that the output voltage, power, and frequency of VSWECS reach to desirable operation values in a very short time. In addition, when PMSG based VSWECS works continuously with the 4.5 kHz switching frequency, the THD rate of voltage in the load terminal is 0.00672%. PMID:24453905

Power quality control and design of power converter for variable-speed wind energy conversion system with permanent-magnet synchronous generator.

PubMed

Oğuz, Yüksel; Güney, İrfan; Çalık, Hüseyin

2013-01-01

The control strategy and design of an AC/DC/AC IGBT-PMW power converter for PMSG-based variable-speed wind energy conversion systems (VSWECS) operation in grid/load-connected mode are presented. VSWECS consists of a PMSG connected to a AC-DC IGBT-based PWM rectifier and a DC/AC IGBT-based PWM inverter with LCL filter. In VSWECS, AC/DC/AC power converter is employed to convert the variable frequency variable speed generator output to the fixed frequency fixed voltage grid. The DC/AC power conversion has been managed out using adaptive neurofuzzy controlled inverter located at the output of controlled AC/DC IGBT-based PWM rectifier. In this study, the dynamic performance and power quality of the proposed power converter connected to the grid/load by output LCL filter is focused on. Dynamic modeling and control of the VSWECS with the proposed power converter is performed by using MATLAB/Simulink. Simulation results show that the output voltage, power, and frequency of VSWECS reach to desirable operation values in a very short time. In addition, when PMSG based VSWECS works continuously with the 4.5 kHz switching frequency, the THD rate of voltage in the load terminal is 0.00672%.

Design and experiment of vehicular charger AC/DC system based on predictive control algorithm

NASA Astrophysics Data System (ADS)

He, Guangbi; Quan, Shuhai; Lu, Yuzhang

2018-06-01

For the car charging stage rectifier uncontrollable system, this paper proposes a predictive control algorithm of DC/DC converter based on the prediction model, established by the state space average method and its prediction model, obtained by the optimal mathematical description of mathematical calculation, to analysis prediction algorithm by Simulink simulation. The design of the structure of the car charging, at the request of the rated output power and output voltage adjustable control circuit, the first stage is the three-phase uncontrolled rectifier DC voltage Ud through the filter capacitor, after by using double-phase interleaved buck-boost circuit with wide range output voltage required value, analyzing its working principle and the the parameters for the design and selection of components. The analysis of current ripple shows that the double staggered parallel connection has the advantages of reducing the output current ripple and reducing the loss. The simulation experiment of the whole charging circuit is carried out by software, and the result is in line with the design requirements of the system. Finally combining the soft with hardware circuit to achieve charging of the system according to the requirements, experimental platform proved the feasibility and effectiveness of the proposed predictive control algorithm based on the car charging of the system, which is consistent with the simulation results.

Activity of Palythoa caribaeorum Venom on Voltage-Gated Ion Channels in Mammalian Superior Cervical Ganglion Neurons.

PubMed

Lazcano-Pérez, Fernando; Castro, Héctor; Arenas, Isabel; García, David E; González-Muñoz, Ricardo; Arreguín-Espinosa, Roberto

2016-05-05

The Zoanthids are an order of cnidarians whose venoms and toxins have been poorly studied. Palythoa caribaeorum is a zoanthid commonly found around the Mexican coastline. In this study, we tested the activity of P. caribaeorum venom on voltage-gated sodium channel (NaV1.7), voltage-gated calcium channel (CaV2.2), the A-type transient outward (IA) and delayed rectifier (IDR) currents of KV channels of the superior cervical ganglion (SCG) neurons of the rat. These results showed that the venom reversibly delays the inactivation process of voltage-gated sodium channels and inhibits voltage-gated calcium and potassium channels in this mammalian model. The compounds responsible for these effects seem to be low molecular weight peptides. Together, these results provide evidence for the potential use of zoanthids as a novel source of cnidarian toxins active on voltage-gated ion channels.

Activity of Palythoa caribaeorum Venom on Voltage-Gated Ion Channels in Mammalian Superior Cervical Ganglion Neurons

PubMed Central

Lazcano-Pérez, Fernando; Castro, Héctor; Arenas, Isabel; García, David E.; González-Muñoz, Ricardo; Arreguín-Espinosa, Roberto

2016-01-01

The Zoanthids are an order of cnidarians whose venoms and toxins have been poorly studied. Palythoa caribaeorum is a zoanthid commonly found around the Mexican coastline. In this study, we tested the activity of P. caribaeorum venom on voltage-gated sodium channel (NaV1.7), voltage-gated calcium channel (CaV2.2), the A-type transient outward (IA) and delayed rectifier (IDR) currents of KV channels of the superior cervical ganglion (SCG) neurons of the rat. These results showed that the venom reversibly delays the inactivation process of voltage-gated sodium channels and inhibits voltage-gated calcium and potassium channels in this mammalian model. The compounds responsible for these effects seem to be low molecular weight peptides. Together, these results provide evidence for the potential use of zoanthids as a novel source of cnidarian toxins active on voltage-gated ion channels. PMID:27164140

Chronic Ca2+ influx through voltage-dependent Ca2+ channels enhance delayed rectifier K+ currents via activating Src family tyrosine kinase in rat hippocampal neurons.

PubMed

Yang, Yoon-Sil; Jeon, Sang-Chan; Kim, Dong-Kwan; Eun, Su-Yong; Jung, Sung-Cherl

2017-03-01

Excessive influx and the subsequent rapid cytosolic elevation of Ca 2+ in neurons is the major cause to induce hyperexcitability and irreversible cell damage although it is an essential ion for cellular signalings. Therefore, most neurons exhibit several cellular mechanisms to homeostatically regulate cytosolic Ca 2+ level in normal as well as pathological conditions. Delayed rectifier K + channels (I DR channels) play a role to suppress membrane excitability by inducing K + outflow in various conditions, indicating their potential role in preventing pathogenic conditions and cell damage under Ca 2+ -mediated excitotoxic conditions. In the present study, we electrophysiologically evaluated the response of I DR channels to hyperexcitable conditions induced by high Ca 2+ pretreatment (3.6 mM, for 24 hours) in cultured hippocampal neurons. In results, high Ca 2+ -treatment significantly increased the amplitude of I DR without changes of gating kinetics. Nimodipine but not APV blocked Ca 2+ -induced I DR enhancement, confirming that the change of I DR might be targeted by Ca 2+ influx through voltage-dependent Ca 2+ channels (VDCCs) rather than NMDA receptors (NMDARs). The VDCC-mediated I DR enhancement was not affected by either Ca 2+ -induced Ca 2+ release (CICR) or small conductance Ca 2+ -activated K + channels (SK channels). Furthermore, PP2 but not H89 completely abolished I DR enhancement under high Ca 2+ condition, indicating that the activation of Src family tyrosine kinases (SFKs) is required for Ca 2+ -mediated I DR enhancement. Thus, SFKs may be sensitive to excessive Ca 2+ influx through VDCCs and enhance I DR to activate a neuroprotective mechanism against Ca 2+ -mediated hyperexcitability in neurons.

Speed control for synchronous motors

NASA Technical Reports Server (NTRS)

Packard, H.; Schott, J.

1981-01-01

Feedback circuit controls fluctuations in speed of synchronous ac motor. Voltage proportional to phase angle is developed by phase detector, rectified, amplified, compared to threshold, and reapplied positively or negatively to motor excitation circuit. Speed control reduces wow and flutter of audio turntables and tape recorders, and enhances hunting in gyroscope motors.

Module Ten: Transformers; Basic Electricity and Electronics Individualized Learning System.

ERIC Educational Resources Information Center

Bureau of Naval Personnel, Washington, DC.

The module introduces a very important electrical device, the transformer. The module is divided into six lessons: transformer construction, transformer theory and operation, turns and voltage ratios, power and current, transformer efficiency, and semiconductor rectifiers. Each lesson consists of an overview, a list of study resources, lesson…

Molecular-beam heteroepitaxial growth and characterization of wide-band-gap semiconductor films and devices

NASA Astrophysics Data System (ADS)

Piquette, Eric Charles

The thesis consists of two parts. Part I describes work on the molecular beam epitaxial (MBE) growth of GaN, AlN, and AlxGa 1-xN alloys, as well as efforts in the initial technical development and demonstration of nitride-based high power electronic devices. The major issues pertaining to MBE growth are discussed, including special requirements of the growth system, substrates, film nucleation, n - and p-type doping, and the dependence of film quality on growth parameters. The GaN films were characterized by a variety of methods, including high resolution x-ray diffraction, photoluminescence, and Hall effect measurement. It is found that the film polarity and extended defect density as well as quality of photoluminescence and electrical transport properties depend crucially on how the nitride layer is nucleated on the substrate and how the subsequent film surface morphology evolves, which can be controlled by the growth conditions. A technique is proposed and demonstrated that utilizes the control of morphology evolution to reduce defect density and improve the structural quality of MBE GaN films. In addition to growth, the design and processing of high voltage GaN Schottky diodes is presented, as well as an experimental study of sputter-deposited ohmic and rectifying metal contacts to GaN. Simple models for high power devices, based on materials properties such as minority carrier diffusion length and critical electric breakdown field, are used to estimate the voltage standoff capability, current carrying capacity, and maximum operating frequency of unipolar and bipolar GaN power devices. The materials and transport properties of GaN pertinent to high power device design were measured experimentally. High voltage Schottky rectifiers were fabricated which verify the impressive electric breakdown field of GaN (2--5 MV/cm). Electron beam induced current (EBIC) experiments were also conducted to measure the minority carrier diffusion length for both electrons and holes in GaN. Part II of the thesis describes studies of the MBE growth of ZnS and investigations of ZnS/GaN fight emitting heterojunctions which show promise for application as blue and green light emitters. Zinc sulfide layers doped with Ag and Al were grown by MBE on sapphire, GaAs, and GaN substrates and characterized by x-ray diffraction and photoluminescence. Preliminary current-voltage and electroluminescence results are presented for a processed ZnS:Al,Ag/GaN:Mg prototype blue light emitting device.

Techniques to measure tension in wires or straw tubes

NASA Astrophysics Data System (ADS)

Oh, S. H.; Lin, S.; Wang, C.

2018-01-01

We discuss two different ways of measuring the tension in light wires and straws. The first technique uses an operational amplifier to subtract out the oscillating driving voltage mixed in the output voltage, which also has the signal. The isolated signal is amplified and displayed in an oscilloscope. In the second technique, an analog switch routes the oscillating voltage to a wire for a fraction of seconds, and then switches off the voltage. As the voltage is turned off, the induced signal from the wire is routed to an amplifier-rectifier circuit for a fraction of a second to measure the signal size as a function of the driving frequency. The first technique fits well to measure a single wire, while the second one fits well to measure many wires, 16 in our case, at a time.

Low-affinity spermine block mediating outward currents through Kir2.1 and Kir2.2 inward rectifier potassium channels

PubMed Central

Ishihara, Keiko; Yan, Ding-Hong

2007-01-01

The outward component of the strong inward rectifier K+ current (IKir) plays a pivotal role in polarizing the membranes of excitable and non-excitable cells and is regulated by voltage-dependent channel block by internal cations. Using the Kir2.1 channel, we previously showed that a small fraction of the conductance susceptible only to a low-affinity mode of block likely carries a large portion of the outward current. To further examine the relevance of the low-affinity block to outward IKir and to explore its molecular mechanism, we studied the block of the Kir2.1 and Kir2.2 channels by spermine, which is the principal Kir2 channel blocker. Current–voltage relations of outward Kir2.2 currents showed a peak, a plateau and two peaks in the presence of 10, 1 and 0.1 μm spermine, respectively, which was explained by the presence of two conductances that differ in their susceptibility to spermine block. When the current–voltage relations showed one peak, like those of native IKir, outward Kir2.2 currents were mediated mostly by the conductance susceptible to the low-affinity block. They also flowed in a narrower range than the corresponding Kir2.1 currents, because of 3- to 4-fold greater susceptibility to the low-affinity block than in Kir2.1. Reducing external [K+] shifted the voltage dependences of both the high- and low-affinity block of Kir2.1 in parallel with the shift in the reversal potential, confirming the importance of the low-affinity block in mediating outward IKir. When Kir2.1 mutants known to have reduced sensitivity to internal blockers were examined, the D172N mutation in the transmembrane pore region made almost all of the conductance susceptible only to low-affinity block, while the E224G mutation in the cytoplasmic pore region reduced the sensitivity to low-affinity block without markedly altering that to the high-affinity block or the high/low conductance ratio. The effects of these mutations support the hypothesis that Kir2 channels exist in two states having different susceptibilities to internal cationic blockers. PMID:17640933

Initial segment Kv2.2 channels mediate a slow delayed rectifier and maintain high frequency action potential firing in medial nucleus of the trapezoid body neurons

PubMed Central

Johnston, Jamie; Griffin, Sarah J; Baker, Claire; Skrzypiec, Anna; Chernova, Tatanya; Forsythe, Ian D

2008-01-01

The medial nucleus of the trapezoid body (MNTB) is specialized for high frequency firing by expression of Kv3 channels, which minimize action potential (AP) duration, and Kv1 channels, which suppress multiple AP firing, during each calyceal giant EPSC. However, the outward K+ current in MNTB neurons is dominated by another unidentified delayed rectifier. It has slow kinetics and a peak conductance of ∼37 nS; it is half-activated at −9.2 ± 2.1 mV and half-inactivated at −35.9 ± 1.5 mV. It is blocked by several non-specific potassium channel antagonists including quinine (100 μm) and high concentrations of extracellular tetraethylammonium (TEA; IC50 = 11.8 mm), but no specific antagonists were found. These characteristics are similar to recombinant Kv2-mediated currents. Quantitative RT-PCR showed that Kv2.2 mRNA was much more prevalent than Kv2.1 in the MNTB. A Kv2.2 antibody showed specific staining and Western blots confirmed that it recognized a protein ∼110 kDa which was absent in brainstem tissue from a Kv2.2 knockout mouse. Confocal imaging showed that Kv2.2 was highly expressed in axon initial segments of MNTB neurons. In the absence of a specific antagonist, Hodgkin–Huxley modelling of voltage-gated conductances showed that Kv2.2 has a minor role during single APs (due to its slow activation) but assists recovery of voltage-gated sodium channels (Nav) from inactivation by hyperpolarizing interspike potentials during repetitive AP firing. Current-clamp recordings during high frequency firing and characterization of Nav inactivation confirmed this hypothesis. We conclude that Kv2.2-containing channels have a distinctive initial segment location and crucial function in maintaining AP amplitude by regulating the interspike potential during high frequency firing. PMID:18511484

Experimental Study of RF Energy Transfer System in Indoor Environment

NASA Astrophysics Data System (ADS)

Adami, S.-E.; Proynov, P. P.; Stark, B. H.; Hilton, G. S.; Craddock, I. J.

2014-11-01

This paper presents a multi-transmitter, 2.43 GHz Radio-Frequency (RF) wireless power transfer (WPT) system for powering on-body devices. It is shown that under typical indoor conditions, the received power range spans several orders of magnitude from microwatts to milliwatts. A body-worn dual-polarised rectenna (rectifying antenna) is presented, designed for situations where the dominant polarization is unpredictable, as is the case for the on-body sensors. Power management circuitry is demonstrated that optimally loads the rectenna even under highly intermittent conditions, and boosts the voltage to charge an on-board storage capacitor.

Rectifying Characteristics and Transport Behavior in a Schottky Junction of CaCu3Ti4O12 and Pt

NASA Astrophysics Data System (ADS)

Chen, Cong; Ning, Ting-Yin; Wang, Can; Zhou, Yue-Liang; Zhang, Dong-Xiang; Wang, Pei; Ming, Hai; Yang, Guo-Zhen

2011-08-01

CaCu3Ti4O12 (CCTO) thin films were fabricated on ITO-covered MgO (100) substrates. The rectification characteristics were observed in the CCTO capacitance structure with Pt top electrodes at temperatures ranging from 150 K to 330 K, which are attributed to the formation of a Schottky junction between n-type semiconducting CCTO and Pt due to the difference of their work functions. At low forward-bias voltage, the current-voltage characteristics of the Schottky junction follow . A strong decrease in ideality factor with the increasing temperature is obtained by linear fitting at the low bias voltage.

A normalized model for the half-bridge series resonant converter

NASA Technical Reports Server (NTRS)

King, R.; Stuart, T. A.

1981-01-01

Closed-form steady-state equations are derived for the half-bridge series resonant converter with a rectified (dc) load. Normalized curves for various currents and voltages are then plotted as a function of the circuit parameters. Experimental results based on a 10-kHz converter are presented for comparison with the calculations.

A Novel Passive Wireless Sensing Method for Concrete Chloride Ion Concentration Monitoring.

PubMed

Zhou, Shuangxi; Sheng, Wei; Deng, Fangming; Wu, Xiang; Fu, Zhihui

2017-12-11

In this paper, a novel approach for concrete chloride ion concentration measuring based on passive and wireless sensor tag is proposed. The chloride ion sensor based on RFID communication protocol is consisting of an energy harvesting and management circuit, a low dropout voltage regulator, a MCU, a RFID tag chip and a pair of electrodes. The proposed sensor harvests energy radiated by the RFID reader to power its circuitry. To improve the stability of power supply, a three-stage boost rectifier is customized to rectify the harvested power into dc power and step-up the voltage. Since the measured data is wirelessly transmitted, it contains miscellaneous noises which would decrease the accuracy of measuring. Thus, in this paper, the wavelet denoising method is adopted to denoise the raw data. Besides, a monitoring software is developed to display the measurement results in real-time. The measurement results indicate that the proposed passive sensor tag can achieve a reliable communication distance of 16.3 m and can reliably measure the chloride ion concentration in concrete.

Unconventional molecule-resolved current rectification in diamondoid–fullerene hybrids

PubMed Central

Randel, Jason C.; Niestemski, Francis C.; Botello-Mendez, Andrés R.; Mar, Warren; Ndabashimiye, Georges; Melinte, Sorin; Dahl, Jeremy E. P.; Carlson, Robert M. K.; Butova, Ekaterina D.; Fokin, Andrey A.; Schreiner, Peter R.; Charlier, Jean-Christophe; Manoharan, Hari C.

2014-01-01

The unimolecular rectifier is a fundamental building block of molecular electronics. Rectification in single molecules can arise from electron transfer between molecular orbitals displaying asymmetric spatial charge distributions, akin to p–n junction diodes in semiconductors. Here we report a novel all-hydrocarbon molecular rectifier consisting of a diamantane–C60 conjugate. By linking both sp3 (diamondoid) and sp2 (fullerene) carbon allotropes, this hybrid molecule opposingly pairs negative and positive electron affinities. The single-molecule conductances of self-assembled domains on Au(111), probed by low-temperature scanning tunnelling microscopy and spectroscopy, reveal a large rectifying response of the molecular constructs. This specific electronic behaviour is postulated to originate from the electrostatic repulsion of diamantane–C60 molecules due to positively charged terminal hydrogen atoms on the diamondoid interacting with the top electrode (scanning tip) at various bias voltages. Density functional theory computations scrutinize the electronic and vibrational spectroscopic fingerprints of this unique molecular structure and corroborate the unconventional rectification mechanism. PMID:25202942

SiC MOSFET Based Single Phase Active Boost Rectifier with Power Factor Correction for Wireless Power Transfer Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Onar, Omer C; Tang, Lixin; Chinthavali, Madhu Sudhan

2014-01-01

Wireless Power Transfer (WPT) technology is a novel research area in the charging technology that bridges the utility and the automotive industries. There are various solutions that are currently being evaluated by several research teams to find the most efficient way to manage the power flow from the grid to the vehicle energy storage system. There are different control parameters that can be utilized to compensate for the change in the impedance due to variable parameters such as battery state-of-charge, coupling factor, and coil misalignment. This paper presents the implementation of an active front-end rectifier on the grid side formore » power factor control and voltage boost capability for load power regulation. The proposed SiC MOSFET based single phase active front end rectifier with PFC resulted in >97% efficiency at 137mm air-gap and >95% efficiency at 160mm air-gap.« less

Low Temperature Electrical Spin Injection from Highly Spin Polarized Co₂CrAl Heusler Alloy into p-Si.

PubMed

Kar, Uddipta; Panda, J; Nath, T K

2018-06-01

The low temperature spin accumulation in p-Si using Co2CrAl/SiO2 tunnel junction has been investigated in detail. The heterojunction has been fabricated using electron beam evaporation (EBE) technique. The 3-terminal contacts in Hanle geometry has been made for spin transport measurements. The electrical transport properties have been investigated at different isothermal conditions in the temperature range of 10-300 K. The current-voltage characteristics of the junction shows excellent rectifying magnetic diode like behaviour in lower temperature range (below 200 K). At higher temperature, the junction shows nonlinear behaviour without rectifying characteristics. We have observed spin accumulation signal in p-Si semiconductor using SiO2/Co2CrAl tunnel junction in the low temperature regime (30-100 K). Hence the highly spin polarized Full Heusler alloys compounds, like Co2CrAl etc., are very attractive and can act as efficient tunnel device for spin injection in the area of spintronics devices in near future. The estimated spin life time is τ = 54 pS and spin diffusion length inside p-Si is LSD = 289 nm at 30 K for this heterostructure.

Multiple pore conformations driven by asynchronous movements of voltage sensors in a eukaryotic sodium channel

PubMed Central

Goldschen-Ohm, Marcel P.; Capes, Deborah L.; Oelstrom, Kevin M.; Chanda, Baron

2013-01-01

Voltage-dependent Na+ channels are crucial for electrical signalling in excitable cells. Membrane depolarization initiates asynchronous movements in four non-identical voltage-sensing domains of the Na+ channel. It remains unclear to what extent this structural asymmetry influences pore gating as compared with outwardly rectifying K+ channels, where channel opening results from a final concerted transition of symmetric pore gates. Here we combine single channel recordings, cysteine accessibility and voltage clamp fluorimetry to probe the relationships between voltage sensors and pore conformations in an inactivation deficient Nav1.4 channel. We observe three distinct conductance levels such that DI-III voltage sensor activation is kinetically correlated with formation of a fully open pore, whereas DIV voltage sensor movement underlies formation of a distinct subconducting pore conformation preceding inactivation in wild-type channels. Our experiments reveal that pore gating in sodium channels involves multiple transitions driven by asynchronous movements of voltage sensors. These findings shed new light on the mechanism of coupling between activation and fast inactivation in voltage-gated sodium channels. PMID:23322038

The voltage-sensing domain of a phosphatase gates the pore of a potassium channel.

PubMed

Arrigoni, Cristina; Schroeder, Indra; Romani, Giulia; Van Etten, James L; Thiel, Gerhard; Moroni, Anna

2013-03-01

The modular architecture of voltage-gated K(+) (Kv) channels suggests that they resulted from the fusion of a voltage-sensing domain (VSD) to a pore module. Here, we show that the VSD of Ciona intestinalis phosphatase (Ci-VSP) fused to the viral channel Kcv creates Kv(Synth1), a functional voltage-gated, outwardly rectifying K(+) channel. Kv(Synth1) displays the summed features of its individual components: pore properties of Kcv (selectivity and filter gating) and voltage dependence of Ci-VSP (V(1/2) = +56 mV; z of ~1), including the depolarization-induced mode shift. The degree of outward rectification of the channel is critically dependent on the length of the linker more than on its amino acid composition. This highlights a mechanistic role of the linker in transmitting the movement of the sensor to the pore and shows that electromechanical coupling can occur without coevolution of the two domains.

Two modes of polyamine block regulating the cardiac inward rectifier K+ current IK1 as revealed by a study of the Kir2.1 channel expressed in a human cell line

PubMed Central

Ishihara, Keiko; Ehara, Tsuguhisa

2004-01-01

The strong inward rectifier K+ current, IK1, shows significant outward current amplitude in the voltage range near the reversal potential and thereby causes rapid repolarization at the final phase of cardiac action potentials. However, the mechanism that generates the outward IK1 is not well understood. We recorded currents from the inside-out patches of HEK 293T cells that express the strong inward rectifier K+ channel Kir2.1 and studied the blockage of the currents caused by cytoplasmic polyamines, namely, spermine and spermidine. The outward current–voltage (I–V) relationships of Kir2.1, obtained with 5–10μm spermine or 10–100μm spermidine, were similar to the steady-state outward I–V relationship of IK1, showing a peak at a level that is ∼20mV more positive than the reversal potential, with a negative slope at more positive voltages. The relationships exhibited a plateau or a double-hump shape with 1μm spermine/spermidine or 0.1μm spermine, respectively. In the chord conductance–voltage relationships, there were extra conductances in the positive voltage range, which could not be described by the Boltzmann relations fitting the major part of the relationships. The extra conductances, which generated most of the outward currents in the presence of 5–10μm spermine or 10–100μm spermidine, were quantitatively explained by a model that considered two populations of Kir2.1 channels, which were blocked by polyamines in either a high-affinity mode (Mode 1 channel) or a low-affinity mode (Mode 2 channel). Analysis of the inward tail currents following test pulses indicated that the relief from the spermine block of Kir2.1 consisted of an exponential component and a virtually instantaneous component. The fractions of the two components nearly agreed with the fractions of the blockages in Mode 1 and Mode 2 calculated by the model. The estimated proportion of Mode 1 channels to total channels was 0.9 with 0.1–10μm spermine, 0.75 with 1–100μm spermidine, and between 0.75 and 0.9 when spermine and spermidine coexisted. An interaction of spermine/spermidine with the channel at an intracellular site appeared to modify the equilibrium of the two conformational channel states that allow different modes of blockage. Our results suggest that the outward IK1 is primarily generated by channels with lower affinities for polyamines. Polyamines may regulate the amplitude of the outward IK1, not only by blocking the channels but also by modifying the proportion of channels that show different sensitivities to the polyamine block. PMID:14724206

Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

NASA Astrophysics Data System (ADS)

Jaya, T. P.; Pradyumnan, P. P.

2017-12-01

Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p-n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current-voltage (I-V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I-V characteristics, and the diode with the p-type layer deposited at a maximum power of 200 W exhibited the highest value of the diode ideality factor (η value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5 V in all cases. The diode structure possessed an optical transmission of 60-70% in the visible region.

Energy harvesting efficiency of piezoelectric polymer film with graphene and metal electrodes.

PubMed

Park, Sanghoon; Kim, Yura; Jung, Hyosub; Park, Jun-Young; Lee, Naesung; Seo, Yongho

2017-12-11

In this study, we investigated an energy harvesting effect of tensile stress using piezoelectric polymers and flexible electrodes. A chemical-vapor-deposition grown graphene film was transferred onto both sides of the PVDF and P(VDF-TrFE) films simultaneously by means of a conventional wet chemical method. Output voltage induced by sound waves was measured and analyzed when a mechanical tension was applied to the device. Another energy harvester was made with a metallic electrode, where Al and Ag were deposited by using an electron-beam evaporator. When acoustic vibrations (105 dB) were applied to the graphene/PVDF/graphene device, an induced voltage of 7.6 V pp was measured with a tensile stress of 1.75 MPa, and this was increased up to 9.1 V pp with a stress of 2.18 MPa for the metal/P(VDF-TrFE)/metal device. The 9 metal/PVDF/metal layers were stacked as an energy harvester, and tension was applied by using springs. Also, we fabricated a full-wave rectifying circuit to store the electrical energy in a 100 μF capacitor, and external vibration generated the electrical charges. As a result, the stored voltage at the capacitor, obtained from the harvester via a bridge diode rectifier, was saturated to ~7.04 V after 180 s charging time.

Sonochemical Synthesis of a Zinc Oxide Core-Shell Nanorod Radial p-n Homojunction Ultraviolet Photodetector.

PubMed

Vabbina, Phani Kiran; Sinha, Raju; Ahmadivand, Arash; Karabiyik, Mustafa; Gerislioglu, Burak; Awadallah, Osama; Pala, Nezih

2017-06-14

We report for the first time on the growth of a homogeneous radial p-n junction in the ZnO core-shell configuration with a p-doped ZnO nanoshell structure grown around a high-quality unintentionally n-doped ZnO nanorod using sonochemistry. The simultaneous decomposition of phosphorous (P), zinc (Zn), and oxygen (O) from their respective precursors during sonication allows for the successful incorporation of P atoms into the ZnO lattice. The as-formed p-n junction shows a rectifying current-voltage characteristic that is consistent with a p-n junction with a threshold voltage of 1.3 V and an ideality factor of 33. The concentration of doping was estimated to be N A = 6.7 × 10 17 cm -3 on the p side from the capacitance-voltage measurements. The fabricated radial p-n junction demonstrated a record optical responsivity of 9.64 A/W and a noise equivalent power of 0.573 pW/√Hz under ultraviolet illumination, which is the highest for ZnO p-n junction devices.

A Practical Study of the 66kV Fault Current Limiter (FCL) System with Rectifier

NASA Astrophysics Data System (ADS)

Tokuda, Noriaki; Matsubara, Yoshio; Yuguchi, Kyosuke; Ohkuma, Takeshi; Hobara, Natsuro; Takahashi, Yoshihisa

A fault current limiter (FCL) is extensively expected to suppress fault current, particularly required for trunk power systems heavily connected high-voltage transmission lines, such as 500kV class power system which constitutes the nucleus of the electric power system. By installing such FCL in the power system, the system interconnection is possible without the need to raise the capacity of the circuit breakers, and facilities can be configured for efficiency, among other benefits. For these reasons, fault current limiters based on various principles of operation have been developed both in Japan and abroad. In this paper, we have proposed a new type of FCL system, consisting of solid-state diodes, DC coil and bypass AC coil, and described the specification of distribution power system and 66kV model at the island power system and the superconducting cable power system. Also we have made a practical study of 66kV class, which is the testing items and the future subjects of the rectifier type FCL system.

Schottky barrier MOSFET systems and fabrication thereof

DOEpatents

Welch, James D.

1997-01-01

(MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controled switching and effecting a direction of rectification.

Schottky barrier MOSFET systems and fabrication thereof

DOEpatents

Welch, J.D.

1997-09-02

(MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controlled switching and effecting a direction of rectification. 89 figs.

Sensing of DNA by Graphene-on-Silicon FET Structures at DC and 101 GHz

DTIC Science & Technology

2015-01-01

For each G in Fig. 2, T displays the oscillatory Airy-function behavior characteristic of all parallel-plate etalons (and Fabry – Perot resonators) with...approximately 5 mm. The output signal from the Schottky rectifier is fed to a 1000-gain low-noise voltage ampli- fier, and then demodulated with a lock-in

Controllable Bidirectional dc Power Sources For Large Loads

NASA Technical Reports Server (NTRS)

Tripp, John S.; Daniels, Taumi S.

1995-01-01

System redesigned for greater efficiency, durability, and controllability. Modern electronically controlled dc power sources proposed to supply currents to six electromagnets used to position aerodynamic test model in wind tunnel. Six-phase bridge rectifier supplies load with large current at voltage of commanded magnitude and polarity. Current-feedback circuit includes current-limiting feature giving some protection against overload.

TV Trouble-Shooting Manual. Volumes 15-16. Part 7: Power-Supply Circuit. Student and Instructor's Manuals.

ERIC Educational Resources Information Center

Mukai, Masaaki; Kobayashi, Ryozo

These volumes are, respectively, the self-instructional student manual and the teacher manual that cover the seventh set of training topics in this course for television repair technicians. Both contain identical information on the television power supply circuit, including sections on the rectifier circuit and the voltage regulator circuit.…

Rectified motion in an asymmetrically structured channel due to induced-charge electrokinetic and thermo-kinetic phenomena

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sugioka, Hideyuki, E-mail: hsugioka@shinshu-u.ac.jp

2016-02-15

It would be advantageous to move fluid by the gradient of random thermal noises that are omnipresent in the natural world. To achieve this motion, we propose a rectifier that uses a thermal noise along with induced-charge electroosmosis and electrophoresis (ICEO and ICEP) around a metal post cylinder in an asymmetrically structured channel and numerically examine its rectification performance. By the boundary element method combined with the thin double layer approximation, we find that rectified motion occurs in the asymmetrically structured channel due to ICEO and ICEP. Further, by thermodynamical and equivalent circuit methods, we discuss a thermal voltage thatmore » drives a rectifier consisting of a fluidic channel of an electrolyte and an impedance as a noise source. Our calculations show that fluid can be moved in the asymmetrically structured channel by the fluctuation of electric fields due to a thermal noise only when there is a temperature difference. In addition, our simple noise argument provides a different perspective for the thermo-kinetic phenomena (around a metal post) which was predicted based on the electrolyte Seebeck effect in our previous paper [H. Sugioka, “Nonlinear thermokinetic phenomena due to the Seebeck effect,” Langmuir 30, 8621 (2014)].« less

FDSOI 28nm performances study for RF energy scavenging

NASA Astrophysics Data System (ADS)

Rochefeuille, E.; Alicalapa, F.; Douyère, A.; Vuong, T. P.

2018-03-01

This paper presents a study on an integrated technology: Fully-Depleted-Silicon-On-Insulator (FDSOI) at a 28nm node. FDSOI results are compared to another technology: Complementary-Metal-Oxide-Semiconductor (CMOS) 350nm. The aim of this work was to demonstrate the advantages of using FDSOI technology in RF energy scavenging applications. Characteristics of transistors are pointed out and results showed an improved 22%-output voltage gain for a series rectifier and a 13%-output voltage gain for a Dickson charge pump in FDSOI technology compared to CMOS, for an input voltage and power of 0.5 V and 0 dBm respectively. Those results allowed to prove that FDSOI 28nm is a better technology choice for energy scavenging and low-power applications.

Formation of BaSi2 heterojunction solar cells using transparent MoOx hole transport layers

NASA Astrophysics Data System (ADS)

Du, W.; Takabe, R.; Baba, M.; Takeuchi, H.; Hara, K. O.; Toko, K.; Usami, N.; Suemasu, T.

2015-03-01

Heterojunction solar cells that consist of 15 nm thick molybdenum trioxide (MoOx, x < 3) as a hole transport layer and 600 nm thick unpassivated or passivated n-BaSi2 layers were demonstrated. Rectifying current-voltage characteristics were observed when the surface of BaSi2 was exposed to air. When the exposure time was decreased to 1 min, an open circuit voltage of 200 mV and a short circuit current density of 0.5 mA/cm2 were obtained under AM1.5 illumination. The photocurrent density under a reverse bias voltage of -1 V reached 25 mA/cm2, which demonstrates the significant potential of BaSi2 for solar cell applications.

Inactivation properties of voltage-gated K+ channels altered by presence of beta-subunit.

PubMed

Rettig, J; Heinemann, S H; Wunder, F; Lorra, C; Parcej, D N; Dolly, J O; Pongs, O

1994-05-26

Structural and functional diversity of voltage-gated Kv1-type potassium channels in rat brain is enhanced by the association of two different types of subunits, the membrane-bound, poreforming alpha-subunits and a peripheral beta-subunit. We have cloned a beta-subunit (Kv beta 1) that is specifically expressed in the rat nervous system. Association of Kv beta 1 with alpha-subunits confers rapid A-type inactivation on non-inactivating Kv1 channels (delayed rectifiers) in expression systems in vitro. This effect is mediated by an inactivating ball domain in the Kv beta 1 amino terminus.

A variable-speed, constant-frequency wind power generation scheme using a slip-ring induction generator

NASA Astrophysics Data System (ADS)

Velayudhan, C.; Bundell, J. H.

This paper investigates a variable-speed, constant-frequency double output induction generator which is capable of absorbing the mechanical energy from a fixed pitch wind turbine and converting it into electrical energy at constant grid voltage and frequency. Rotor power at varying voltage and frequency is either fed to electronically controlled resistances and used as heat energy or is rectified, inverted by a controllable line-commutated inverter and returned to the grid. Optimal power tracking is by means of an adaptive controller which controls the developed torque of the generator by monitoring the shaft speed.

Setup for potential bias experiments on the Saha Institute of Nuclear Physics tokamak

NASA Astrophysics Data System (ADS)

Ghosh, J.; Pal, R.; Chattopadhyay, P. K.

1999-12-01

An experimental setup for studying the influence of the radial electric field on very low qa plasma on the Saha Institute of Nuclear Physics tokamak is presented. A high current, high voltage pulsed power supply, using a semiconductor controlled rectifier (SCR) as a dc switch is developed and used to bias a tungsten electrode inserted inside the plasma. The electrode's exposed length and its position inside the plasma are controlled by a double bellows assembly to optimize the electrode-exposed length. We show that using the force commutation method to turn the SCR off to get the power pulse desired has good potential for carrying out similar kinds of studies, especially in a low budget small tokamak.

Development of Vibration-Based Piezoelectric Raindrop Energy Harvesting System

NASA Astrophysics Data System (ADS)

Wong, Chin Hong; Dahari, Zuraini

2017-03-01

The trend of finding new means to harvest energy has triggered numerous researches to explore the potential of raindrop energy harvesting. This paper presents an investigation on raindrop energy harvesting which compares the performance of polyvinylidene fluoride (PVDF) cantilever and bridge structure transducers and the development of a raindrop energy harvesting system. The parameters which contribute to the output voltage such as droplet size, droplets released at specific heights and dimensions of PVDF transducers are analyzed. Based on the experimental results, the outcomes have shown that the bridge structure transducer generated a higher voltage than the cantilever. Several dimensions have been tested and it was found that the 30 mm × 4 mm × 25 μm bridge structure transducer generated a relatively high AC open-circuit voltage, which is 4.22 V. The power generated by the bridge transducer is 18 μW across a load of 330 kΩ. The transducer is able to drive up a standard alternative current (AC) to direct current (DC) converter (full-wave bridge rectifier). It generated a DC voltage, V DC of 8.7 mV and 229 pW across a 330 kΩ resistor per drop. It is also capable to generate 9.3 nJ in 20 s from an actual rain event.

Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sinha, Neeraj; Department of Materials Science, Gulbarga University, Gulbarga 585106; Roul, Basanta, E-mail: basantaroul@gmail.com

2015-01-15

Highlights: • InGaN thin films were grown on GaN template by PAMBE. • InGaN films were characterized by HRXRD, SEM and PL and Raman spectroscopy. • The indium incorporation in single phase InGaN films was found to be 23%. • The I–V characteristic of the InGaN/GaN heterojunction shows rectifying behavior. • Log–log plot of the I–V characteristics indicates the presence of SCLC mechanism. - Abstract: InGaN epitaxial films were grown on GaN template by plasma-assisted molecular beam epitaxy. The composition of indium incorporation in single phase InGaN film was found to be 23%. The band gap energy of single phasemore » InGaN was found to be ∼2.48 eV. The current–voltage (I–V) characteristic of InGaN/GaN heterojunction was found to be rectifying behavior which shows the presence of Schottky barrier at the interface. Log–log plot of the I–V characteristics under forward bias indicates the current conduction mechanism is dominated by space charge limited current mechanism at higher applied voltage, which is usually caused due to the presence of trapping centers. The room temperature barrier height and the ideality factor of the Schottky junction were found to 0.76 eV and 4.9 respectively. The non-ideality of the Schottky junction may be due to the presence of high pit density and dislocation density in InGaN film.« less

Radio frequency energy harvesting from a feeding source in a passive deep brain stimulation device for murine preclinical research.

PubMed

Hosain, Md Kamal; Kouzani, Abbas Z; Tye, Susannah J; Samad, Mst Fateha; Kale, Rajas P; Bennet, Kevin E; Manciu, Felicia S; Berk, Michael

2015-10-01

This paper presents the development of an energy harvesting circuit for use with a head-mountable deep brain stimulation (DBS) device. It consists of a circular planar inverted-F antenna (PIFA) and a Schottky diode-based Cockcroft-Walton 4-voltage rectifier. The PIFA has the volume of π × 10(2) × 1.5 mm(3), resonance frequency of 915 MHz, and bandwidth of 16 MHz (909-925 MHz) at a return loss of -10 dB. The rectifier offers maximum efficiency of 78% for the input power of -5 dBm at a 5 kΩ load resistance. The developed rectenna operates efficiently at 915 MHz for the input power within -15 dBm to +5 dBm. For operating a DBS device, the DC voltage of 2 V is recorded from the rectenna terminal at a distance of 55 cm away from a 26.77 dBm transmitter in free space. An in-vitro test of the DBS device is presented. Copyright © 2015 IPEM. Published by Elsevier Ltd. All rights reserved.

Implementation of Four-Phase Interleaved Balance Charger for Series-Connected Batteries with Power Factor Correction

NASA Astrophysics Data System (ADS)

Juan, Y. L.; Lee, Y. T.; Lee, Y. L.; Chen, L. L.; Huang, M. L.

2017-11-01

A four-phase interleaved balance charger for series-connected batteries with power factor correction is proposed in this dissertation. In the two phases of two buckboost converters, the rectified ac power is firstly converted to a dc link capacitor. In the other two phases of two flyback converters, the rectified ac power is directly converted to charge the corresponding batteries. Additionally, the energy on the leakage inductance of flyback converter is bypassed to the dc link capacitor. Then, a dual-output balance charging circuit is connected to the dc link to deliver the dc link power to charge two batteries in the series-connected batteries module. The constant-current/constant-voltage charging strategy is adopted. Finally, a prototype of the proposed charger with rated power 500 W is constructed. From the experimental results, the performance and validity of the proposed topology are verified. Compared to the conventional topology with passive RCD snubber, the efficiency of the proposed topology is improved about 3% and the voltage spike on the active switch is also reduced. The efficiency of the proposed charger is at least 83.6 % within the CC/CV charging progress.

A Sub-millimeter, Inductively Powered Neural Stimulator

PubMed Central

Freeman, Daniel K.; O'Brien, Jonathan M.; Kumar, Parshant; Daniels, Brian; Irion, Reed A.; Shraytah, Louis; Ingersoll, Brett K.; Magyar, Andrew P.; Czarnecki, Andrew; Wheeler, Jesse; Coppeta, Jonathan R.; Abban, Michael P.; Gatzke, Ronald; Fried, Shelley I.; Lee, Seung Woo; Duwel, Amy E.; Bernstein, Jonathan J.; Widge, Alik S.; Hernandez-Reynoso, Ana; Kanneganti, Aswini; Romero-Ortega, Mario I.; Cogan, Stuart F.

2017-01-01

Wireless neural stimulators are being developed to address problems associated with traditional lead-based implants. However, designing wireless stimulators on the sub-millimeter scale (<1 mm3) is challenging. As device size shrinks, it becomes difficult to deliver sufficient wireless power to operate the device. Here, we present a sub-millimeter, inductively powered neural stimulator consisting only of a coil to receive power, a capacitor to tune the resonant frequency of the receiver, and a diode to rectify the radio-frequency signal to produce neural excitation. By replacing any complex receiver circuitry with a simple rectifier, we have reduced the required voltage levels that are needed to operate the device from 0.5 to 1 V (e.g., for CMOS) to ~0.25–0.5 V. This reduced voltage allows the use of smaller receive antennas for power, resulting in a device volume of 0.3–0.5 mm3. The device was encapsulated in epoxy, and successfully passed accelerated lifetime tests in 80°C saline for 2 weeks. We demonstrate a basic proof-of-concept using stimulation with tens of microamps of current delivered to the sciatic nerve in rat to produce a motor response. PMID:29230164

Giant rectification in graphene nanoflake molecular devices with asymmetric graphene nanoribbon electrodes

NASA Astrophysics Data System (ADS)

Ji, Xiao-Li; Xie, Zhen; Zuo, Xi; Zhang, Guang-Ping; Li, Zong-Liang; Wang, Chuan-Kui

2016-09-01

By applying density functional theory based nonequilibrium Green's function method, we theoretically investigate the electron transport properties of a zigzag-edged trigonal graphene nanoflake (ZTGNF) sandwiched between two asymmetric zigzag graphene nanoribbon (zGNR) and armchair graphene nanoribbon (aGNR) electrodes with carbon atomic chains (CACs) as the anchoring groups. Significant rectifying effects have been observed for these molecular devices in low bias voltage regions. Interestingly, the rectifying performance of molecular devices can be optimized by changing the width of the aGNR electrode and the number of anchoring CACs. Especially, the molecular device displays giant rectification ratios up to the order of 104 when two CACs are used as the anchoring group between the ZTGNF and the right aGNR electrode. Further analysis indicates that the asymmetric shift of the perturbed molecular energy levels and the spatial parity of the electron wavefunctions in the electrodes around the Fermi level play key roles in determining the rectification performance. And the spatial distributions of tunneling electron wavefunctions under negative bias voltages can be modified to be very localized by changing the number of anchoring CACs, which is found to be the origin of the giant rectification ratios.

How to realize a spin-dependent Seebeck diode effect in metallic zigzag γ-graphyne nanoribbons?

PubMed

Wu, Dan-Dan; Liu, Qing-Bo; Fu, Hua-Hua; Wu, Ruqian

2017-11-30

The spin-dependent Seebeck effect (SDSE) is one of the core topics of spin caloritronics. In the traditional device designs of spin-dependent Seebeck rectifiers and diodes, finite spin-dependent band gaps of materials are required to realize the on-off characteristic in thermal spin currents, and nearly zero charge current should be achieved to reduce energy dissipation. Here, we propose that two ferromagnetic zigzag γ-graphyne nanoribbons (ZγGNRs) without any spin-dependent band gaps around the Fermi level can not only exhibit the SDSE, but also display rectifier and diode effects in thermal spin currents characterized by threshold temperatures, which originates from the compensation effect occurring in spin-dependent transmissions but not from the spin-splitting band gaps in materials. The metallic characteristics of ZγGNRs bring about an advantage that the gate voltage is an effective route to adjust the symmetry of spin-splitting bands to obtain pure thermal spin currents. The results provide a new mechanism to realize spin-Seebeck rectifier and diode effects in 2D materials and expand material candidates towards spin-Seebeck device applications.

Design and analysis of a novel doubly salient permanent- magnet generator

NASA Astrophysics Data System (ADS)

Sarlioglu, Bulent

Improvements in permanent magnets and power electronics technologies have made it possible to devise different configurations of electrical machines which were not previously possible to implement. In this dissertation, a novel Doubly Salient Permanent Magnet (DSPM) generator has been designed, analyzed, and tested. The DSPM generator has four stator poles and six rotor poles. Two high density permanent magnets are located in the stator yoke. Since there are no windings or permanent magnets in the rotor, the DSPM generator has several advantages: the rotor has low inertia, no copper loss, no PM attachments, no brushes, and no slip rings. This type of rotor can be manufactured easily, and can be run at very high speeds as in the case of a switched reluctance machine. Compared to induction and switched reluctance machines, the DSPM generator can produce more power from the same geometry. Moreover, the efficiency of the DSPM generator is higher, since there is no copper loss associated with excitation of the machine. Another advantage of the DSPM generator is that the output AC voltage can easily be rectified by a diode bridge rectifier, while in the case of the switched reluctance machine one needs to use active semiconductor switches for power generation. If greater utilization and control of power production capability are desired, the AC output of the DSPM generator can be rectified using an active converter. In this dissertation, a novel doubly salient permanent magnet generator is introduced. First, the theory of the DSPM generator is given. Later, this novel generator is investigated using conventional magnetic circuits, nonlinear finite element analysis, and simulations with first order approximations and nonlinear modeling. It is compared with other generators. Static and no-load testing of the prototype DSPM generator are presented, and generator performance is evaluated with various power electronic circuits.

Grid-connected wind and photovoltaic system

NASA Astrophysics Data System (ADS)

Devabakthuni, Sindhuja

The objective of this thesis is to design a grid connected wind and photovoltaic system. A new model of converter control was designed which maintains the voltage of the bus to grid as constant when combined system of solar and wind is connected to AC bus. The model is designed to track maximum power at each point irrespective of changes in irradiance, temperature and wind speed which affects the power supplied to grid. Solar power from the sun is not constant as it is affected by changes in irradiances and temperature. Even the wind power is affected by wind speed. A MPPT controller was designed for both systems. A boost converter is designed which uses the pulses from MPPT controller to boost the output. Wind system consists of wind turbine block from the MATLAB with a pitch angle controller to maintain optimum pitch angle. The output from wind turbine is connected to a permanent magnet synchronous generator. The unregulated DC output from the photovoltaic system is directly given to boost converter. The AC output from the wind system is given to an uncontrolled rectifier to get a unregulated DC output. The unregulated DC output goes to the boost converter. A voltage source inverter was designed which converts the rectified DC output from the boost converter to AC power. The inverter is designed to maintain constant AC bus voltage irrespective of the disturbances in the power supply. Photovoltaic and wind systems are individually designed for 5KW each in MATLAB-Simulink environment. In this thesis, the models were subjected to changes in irradiance, temperature and wind speed and the results were interpreted. The model was successful in tracking maximum at every instant and the AC bus voltage was maintained constant throughout the simulation.

Shuttlecock-Shaped Molecular Rectifier: Asymmetric Electron Transport Coupled with Controlled Molecular Motion.

PubMed

Ryu, Taekhee; Lansac, Yves; Jang, Yun Hee

2017-07-12

A fullerene derivative with five hydroxyphenyl groups attached around a pentagon, (4-HOC 6 H 4 ) 5 HC 60 (1), has shown an asymmetric current-voltage (I-V) curve in a conducting atomic force microscopy experiment on gold. Such molecular rectification has been ascribed to the asymmetric distribution of frontier molecular orbitals over its shuttlecock-shaped structure. Our nonequilibrium Green's function (NEGF) calculations based on density functional theory (DFT) indeed exhibit an asymmetric I-V curve for 1 standing up between two Au(111) electrodes, but the resulting rectification ratio (RR ∼ 3) is insufficient to explain the wide range of RR observed in experiments performed under a high bias voltage. Therefore, we formulate a hypothesis that high RR (>10) may come from molecular orientation switching induced by a strong electric field applied between two electrodes. Indeed, molecular dynamics simulations of a self-assembled monolayer of 1 on Au(111) show that the orientation of 1 can be switched between standing-up and lying-on-the-side configurations in a manner to align its molecular dipole moment with the direction of the applied electric field. The DFT-NEGF calculations taking into account such field-induced reorientation between up and side configurations indeed yield RR of ∼13, which agrees well with the experimental value obtained under a high bias voltage.

Power-Quality Improvement in PFC Bridgeless SEPIC-Fed BLDC Motor Drive

NASA Astrophysics Data System (ADS)

Singh, Bhim; Bist, Vashist

2013-06-01

This article presents a design of a power factor correction (PFC)-based brushless DC (BLDC) motor drive. The speed control of BLDC motor is achieved by controlling the DC link voltage of the voltage source inverter (VSI) feeding BLDC motor using a single voltage sensor. A front-end bridgeless single-ended primary inductance converter (SEPIC) is used for DC link voltage control and PFC operation. A bridgeless SEPIC is designed to operate in discontinuous inductor current mode (DICM) thus utilizing a simple control scheme of voltage follower. An electronic commutation of BLDC motor is used for VSI to operate in a low-frequency operation for reduced switching losses in the VSI. Moreover, a bridgeless topology offers less conduction losses due to absence of diode bridge rectifier for further increasing the efficiency. The proposed BLDC motor drive is designed to operate over a wide range of speed control with an improved power-quality at the AC mains under the recommended international power-quality standards such as IEC 61000-3-2.

The voltage-sensing domain of a phosphatase gates the pore of a potassium channel

PubMed Central

Arrigoni, Cristina; Schroeder, Indra; Romani, Giulia; Van Etten, James L.; Thiel, Gerhard

2013-01-01

The modular architecture of voltage-gated K+ (Kv) channels suggests that they resulted from the fusion of a voltage-sensing domain (VSD) to a pore module. Here, we show that the VSD of Ciona intestinalis phosphatase (Ci-VSP) fused to the viral channel Kcv creates KvSynth1, a functional voltage-gated, outwardly rectifying K+ channel. KvSynth1 displays the summed features of its individual components: pore properties of Kcv (selectivity and filter gating) and voltage dependence of Ci-VSP (V1/2 = +56 mV; z of ∼1), including the depolarization-induced mode shift. The degree of outward rectification of the channel is critically dependent on the length of the linker more than on its amino acid composition. This highlights a mechanistic role of the linker in transmitting the movement of the sensor to the pore and shows that electromechanical coupling can occur without coevolution of the two domains. PMID:23440279

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse.

PubMed

Oliva, Nicoló; Casu, Emanuele Andrea; Yan, Chen; Krammer, Anna; Rosca, Teodor; Magrez, Arnaud; Stolichnov, Igor; Schueler, Andreas; Martin, Olivier J F; Ionescu, Adrian Mihai

2017-10-27

Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of materials. In parallel, strongly correlated functional oxides have emerged, having the ability to show reversible insulator-to-metal (IMT) phase transition by collapsing their electronic bandgap under a certain external stimulus. Here, we report for the first time the electronic and optoelectronic characterization of ultra-thin n-n heterojunctions fabricated using deterministic assembly of multilayer molybdenum disulphide (MoS 2 ) on a phase transition material, vanadium dioxide (VO 2 ). The vdW MoS 2 /VO 2 heterojunction combines the excellent blocking capability of an n-n junction with a high conductivity in on-state, and it can be turned into a Schottky rectifier at high applied voltage or at temperatures higher than 68 °C, exploiting the metal state of VO 2 . We report tunable diode-like current rectification with a good diode ideality factor of 1.75 and excellent conductance swing of 120 mV/dec. Finally, we demonstrate unique tunable photosensitivity and excellent junction photoresponse in the 500/650 nm wavelength range.

The delayed rectifier, IKI, is the major conductance in type I vestibular hair cells across vestibular end organs

NASA Technical Reports Server (NTRS)

Ricci, A. J.; Rennie, K. J.; Correia, M. J.

1996-01-01

Hair cells were dissociated from the semicircular canal, utricle, lagena and saccule of white king pigeons. Type I hair cells were identified morphologically based on the ratios of neck width to cuticular plate width (NPR < 0.72) as well as neck width to cell body width (NBR < 0.64). The perforated patch variant of the whole-cell recording technique was used to measure electrical properties from type I hair cells. In voltage-clamp, the membrane properties of all identified type I cells were dominated by a predominantly outward potassium current, previously characterized in semicircular canal as IKI. Zero-current potential, activation, deactivation, slope conductance, pharmacologic and steady-state properties of the complex currents were not statistically different between type I hair cells of different vestibular end organs. The voltage dependence causes a significant proportion of this conductance to be active about the cell's zero-current potential. The first report of the whole-cell activation kinetics of the conductance is presented, showing a voltage dependence that could be best fit by an equation for a single exponential. Results presented here are the first data from pigeon dissociated type I hair cells from utricle, saccule and lagena suggesting that the basolateral conductances of a morphologically identified population of type I hair cells are conserved between functionally different vestibular end organs; the major conductance being a delayed rectifier characterized previously in semicircular canal hair cells as IKI.

Design of RF energy harvesting platforms for power management unit with start-up circuits

NASA Astrophysics Data System (ADS)

Costanzo, Alessandra; Masotti, Diego

2013-12-01

In this contribution we discuss an unconventional rectifier design dedicated to RF energy harvesting from ultra-low sources, such as ambient RF sources which are typically of the order of few to few tens of μW. In such conditions unsuccessful results may occur if the rectenna is directly connected to its actual load since either the minimum power or the minimum activation voltage may not be simultaneously available. For this reason a double-branch rectifier topology is considered for the power management unit (PMU), instead of traditional single-branch one. The new PMU, interposed between the rectenna and application circuits, allows the system to operate with significantly lower input power with respect to the traditional solution, while preserving efficiency during steady-state power conversion.

Effect of N2 flow during deposition on p-type ZnO film

NASA Astrophysics Data System (ADS)

Lin, Chiung-Wei; Liu, Bor-Chang

2017-01-01

In this study, the influence of a nitrogen source on p-type conductive ZnO films was studied. Rapid thermal oxidation was conducted to oxidize ZnN films and convert them to ZnO films. When an as-deposited ZnN film was prepared at a high nitrogen gas flow rate, the converted ZnO film possessed many acceptors and showed stable p-type conduction. This p-type conduction was attributed to the nitrogen gas flow providing many “No” states, which act as acceptors within the processed ZnO film. It was found that the as-deposited ZnN film prepared at a high nitrogen gas flow rate is oxidized slightly so that only a few nitrogen atoms were replaced by oxygen. The carrier concentration and mobility of the optimized oxidized ZnN film were 9.76 × 1017 cm-3 and 62.78 cm2 V-1 s-1, respectively. A good rectified current-voltage characteristic with a turn-on voltage of 3.65 V was achieved for the optimized ZnO:N/ZnO junction.

Inward rectifier potassium currents in mammalian skeletal muscle fibres

PubMed Central

DiFranco, Marino; Yu, Carl; Quiñonez, Marbella; Vergara, Julio L

2015-01-01

Inward rectifying potassium (Kir) channels play a central role in maintaining the resting membrane potential of skeletal muscle fibres. Nevertheless their role has been poorly studied in mammalian muscles. Immunohistochemical and transgenic expression were used to assess the molecular identity and subcellular localization of Kir channel isoforms. We found that Kir2.1 and Kir2.2 channels were targeted to both the surface andthe transverse tubular system membrane (TTS) compartments and that both isoforms can be overexpressed up to 3-fold 2 weeks after transfection. Inward rectifying currents (IKir) had the canonical features of quasi-instantaneous activation, strong inward rectification, depended on the external [K+], and could be blocked by Ba2+ or Rb+. In addition, IKir records show notable decays during large 100 ms hyperpolarizing pulses. Most of these properties were recapitulated by model simulations of the electrical properties of the muscle fibre as long as Kir channels were assumed to be present in the TTS. The model also simultaneously predicted the characteristics of membrane potential changes of the TTS, as reported optically by a fluorescent potentiometric dye. The activation of IKir by large hyperpolarizations resulted in significant attenuation of the optical signals with respect to the expectation for equal magnitude depolarizations; blocking IKir with Ba2+ (or Rb+) eliminated this attenuation. The experimental data, including the kinetic properties of IKir and TTS voltage records, and the voltage dependence of peak IKir, while measured at widely dissimilar bulk [K+] (96 and 24 mm), were closely predicted by assuming Kir permeability (PKir) values of ∼5.5 × 10−6 cm s−1 and equal distribution of Kir channels at the surface and TTS membranes. The decay of IKir records and the simultaneous increase in TTS voltage changes were mostly explained by K+ depletion from the TTS lumen. Most importantly, aside from allowing an accurate estimation of most of the properties of IKir in skeletal muscle fibres, the model demonstrates that a substantial proportion of IKir (>70%) arises from the TTS. Overall, our work emphasizes that measured intrinsic properties (inward rectification and external [K] dependence) and localization of Kir channels in the TTS membranes are ideally suited for re-capturing potassium ions from the TTS lumen during, and immediately after, repetitive stimulation under physiological conditions. Key points This paper provides a comprehensive electrophysiological characterization of the external [K+] dependence and inward rectifying properties of Kir channels in fast skeletal muscle fibres of adult mice. Two isoforms of inward rectifier K channels (IKir2.1 and IKir2.2) are expressed in both the surface and the transverse tubular system (TTS) membranes of these fibres. Optical measurements demonstrate that Kir currents (IKir) affect the membrane potential changes in the TTS membranes, and result in a reduction in luminal [K+]. A model of the muscle fibre assuming that functional Kir channels are equally distributed between the surface and TTS membranes accounts for both the electrophysiological and the optical data. Model simulations demonstrate that the more than 70% of IKir arises from the TTS membranes. [K+] increases in the lumen of the TTS resulting from the activation of K delayed rectifier channels (Kv) lead to drastic enhancements of IKir, and to right-shifts in their reversal potential. These changes are predicted by the model. PMID:25545278

Operation and biasing for single device equivalent to CMOS

DOEpatents

Welch, James D.

2001-01-01

Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of field induced carriers. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents. Operation of the gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems under typical bias schemes is described, and simple demonstrative five mask fabrication procedures for the inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

ELECTRONIC TRIGGER CIRCUIT

DOEpatents

Russell, J.A.G.

1958-01-01

An electronic trigger circuit is described of the type where an output pulse is obtained only after an input voltage has cqualed or exceeded a selected reference voltage. In general, the invention comprises a source of direct current reference voltage in series with an impedance and a diode rectifying element. An input pulse of preselected amplitude causes the diode to conduct and develop a signal across the impedance. The signal is delivered to an amplifier where an output pulse is produced and part of the output is fed back in a positive manner to the diode so that the amplifier produces a steep wave front trigger pulsc at the output. The trigger point of the described circuit is not subject to variation due to the aging, etc., of multi-electrode tabes, since the diode circuit essentially determines the trigger point.

An Inductorless Self-Controlled Rectifier for Piezoelectric Energy Harvesting

PubMed Central

Lu, Shaohua; Boussaid, Farid

2015-01-01

This paper presents a high-efficiency inductorless self-controlled rectifier for piezoelectric energy harvesting. High efficiency is achieved by discharging the piezoelectric device (PD) capacitance each time the current produced by the PD changes polarity. This is achieved automatically without the use of delay lines, thereby making the proposed circuit compatible with any type of PD. In addition, the proposed rectifier alleviates the need for an inductor, making it suitable for on-chip integration. Reported experimental results show that the proposed rectifier can harvest up to 3.9 times more energy than a full wave bridge rectifier. PMID:26610492

An Inductorless Self-Controlled Rectifier for Piezoelectric Energy Harvesting.

PubMed

Lu, Shaohua; Boussaid, Farid

2015-11-19

This paper presents a high-efficiency inductorless self-controlled rectifier for piezoelectric energy harvesting. High efficiency is achieved by discharging the piezoelectric device (PD) capacitance each time the current produced by the PD changes polarity. This is achieved automatically without the use of delay lines, thereby making the proposed circuit compatible with any type of PD. In addition, the proposed rectifier alleviates the need for an inductor, making it suitable for on-chip integration. Reported experimental results show that the proposed rectifier can harvest up to 3.9 times more energy than a full wave bridge rectifier.

High performance Schottky diodes based on indium-gallium-zinc-oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jiawei; Song, Aimin, E-mail: A.Song@manchester.ac.uk; Xin, Qian

Indium-gallium-zinc-oxide (IGZO) Schottky diodes exhibit excellent performance in comparison with conventional devices used in future flexible high frequency electronics. In this work, a high performance Pt IGZO Schottky diode was presented by using a new fabrication process. An argon/oxygen mixture gas was introduced during the deposition of the Pt layer to reduce the oxygen deficiency at the Schottky interface. The diode showed a high barrier height of 0.92 eV and a low ideality factor of 1.36 from the current–voltage characteristics. Even the radius of the active area was 0.1 mm, and the diode showed a cut-off frequency of 6 MHz in themore » rectifier circuit. Using the diode as a demodulator, a potential application was also demonstrated in this work.« less

Insulin increases excitability via a dose-dependent dual inhibition of voltage-activated K+ currents in differentiated N1E-115 neuroblastoma cells.

PubMed

Lima, Pedro A; Vicente, M Inês; Alves, Frederico M; Dionísio, José C; Costa, Pedro F

2008-04-01

A role in the control of excitability has been attributed to insulin via modulation of potassium (K(+)) currents. To investigate insulin modulatory effects on voltage-activated potassium currents in a neuronal cell line with origin in the sympathetic system, we performed whole-cell voltage-clamp recordings in differentiated N1E-115 neuroblastoma cells. Two main voltage-activated K(+) currents were identified: (a) a relatively fast inactivating current (I(fast) - time constant 50-300 ms); (b) a slow delayed rectifying K(+) current (I(slow) - time constant 1-4 s). The kinetics of inactivation of I(fast), rather than I(slow), showed clear voltage dependence. I(fast) and I(slow) exhibited different activation and inactivation dependence for voltage, and have different but nevertheless high sensitivities to tetraethylammonium, 4-aminopyridine and quinidine. In differentiated cells - rather than in non-differentiated cells - application of up to 300 nm insulin reduced I(slow) only (IC(50) = 6.7 nm), whereas at higher concentrations I(fast) was also affected (IC(50) = 7.7 microm). The insulin inhibitory effect is not due to a change in the activation or inactivation current-voltage profiles, and the time-dependent inactivation is also not altered; this is not likely to be a result of activation of the insulin-growth-factor-1 (IGF1) receptors, as application of IGF1 did not result in significant current alteration. Results suggest that the current sensitive to low concentrations of insulin is mediated by erg-like channels. Similar observations concerning the insulin inhibitory effect on slow voltage-activated K(+) currents were also made in isolated rat hippocampal pyramidal neurons, suggesting a widespread neuromodulator role of insulin on K(+) channels.

Multiple piezo-patch energy harvesters on a thin plate with respective AC-DC conversion

NASA Astrophysics Data System (ADS)

Aghakhani, Amirreza; Basdogan, Ipek

2018-03-01

Piezoelectric patch energy harvesters can be directly integrated to plate-like structures which are widely used in automotive, marine and aerospace applications, to convert vibrational energy to electrical energy. This paper presents two different AC-DC conversion techniques for multiple patch harvesters, namely single rectifier and respective rectifiers. The first case considers all the piezo-patches are connected in parallel to a single rectifier, whereas in the second case, each harvester is respectively rectified and then connected in parallel to a smoothing capacitor and a resistive load. The latter configuration of AC-DC conversion helps to avoid the electrical charge cancellation which is a problem with the multiple harvesters attached to different locations of the host plate surface. Equivalent circuit model of the multiple piezo-patch harvesters is developed in the SPICE software to simulate the electrical response. The system parameters are obtained from the modal analysis solution of the plate. Simulations of the voltage frequency response functions (FRFs) for the standard AC input - AC output case are conducted and validated by experimental data. Finally, for the AC input - DC output case, numerical simulation and experimental results of the power outputs of multiple piezo-patch harvesters with multiple AC-DC converters are obtained for a wide range of resistive loads and compared with the same array of harvesters connected to a single AC-DC converter.

Controlling charge current through a DNA based molecular transistor

NASA Astrophysics Data System (ADS)

Behnia, S.; Fathizadeh, S.; Ziaei, J.

2017-01-01

Molecular electronics is complementary to silicon-based electronics and may induce electronic functions which are difficult to obtain with conventional technology. We have considered a DNA based molecular transistor and study its transport properties. The appropriate DNA sequence as a central chain in molecular transistor and the functional interval for applied voltages is obtained. I-V characteristic diagram shows the rectifier behavior as well as the negative differential resistance phenomenon of DNA transistor. We have observed the nearly periodic behavior in the current flowing through DNA. It is reported that there is a critical gate voltage for each applied bias which above it, the electrical current is always positive.

Ring magnet firing angle control

DOEpatents

Knott, M.J.; Lewis, L.G.; Rabe, H.H.

1975-10-21

A device is provided for controlling the firing angles of thyratrons (rectifiers) in a ring magnet power supply. A phase lock loop develops a smooth ac signal of frequency equal to and in phase with the frequency of the voltage wave developed by the main generator of the power supply. A counter that counts from zero to a particular number each cycle of the main generator voltage wave is synchronized with the smooth AC signal of the phase lock loop. Gates compare the number in the counter with predetermined desired firing angles for each thyratron and with coincidence the proper thyratron is fired at the predetermined firing angle.

Active Pyroelectric Infrared Detector

NASA Technical Reports Server (NTRS)

Zuckerwar, Allan J. (Inventor); Zalameda, Joseph N. (Inventor); Mina, Joseph M. (Inventor)

1995-01-01

A noncontact pyroelectric infrared detector is described. A pyroelectric film that also has piezoelectric properties is held in place so that it is free to vibrate. It is electrically stimulated to vibrate at a resonance frequency. The vibrating film forms part of a balanced bridge circuit. As thermal radiation impinges on the film the pyroelectric effect causes the resonance frequency to change, thereby unbalancing the bridge circuit. A differential amplifier tracks the change in voltage across the bridge. The resulting voltage signal is further processed by a bandpass filter and a precision rectifier. The device allows for DC or static temperature measurements without the use of a mechanical chopping device.

Electromagnetic wave energy converter

NASA Technical Reports Server (NTRS)

Bailey, R. L. (Inventor)

1973-01-01

Electromagnetic wave energy is converted into electric power with an array of mutually insulated electromagnetic wave absorber elements each responsive to an electric field component of the wave as it impinges thereon. Each element includes a portion tapered in the direction of wave propagation to provide a relatively wideband response spectrum. Each element includes an output for deriving a voltage replica of the electric field variations intercepted by it. Adjacent elements are positioned relative to each other so that an electric field subsists between adjacent elements in response to the impinging wave. The electric field results in a voltage difference between adjacent elements that is fed to a rectifier to derive dc output power.

Research on fault characteristics about switching component failures for distribution electronic power transformers

NASA Astrophysics Data System (ADS)

Sang, Z. X.; Huang, J. Q.; Yan, J.; Du, Z.; Xu, Q. S.; Lei, H.; Zhou, S. X.; Wang, S. C.

2017-11-01

The protection is an essential part for power device, especially for those in power grid, as the failure may cost great losses to the society. A study on the voltage and current abnormality in the power electronic devices in Distribution Electronic Power Transformer (D-EPT) during the failures on switching components is presented, as well as the operational principles for 10 kV rectifier, 10 kV/400 V DC-DC converter and 400 V inverter in D-EPT. Derived from the discussion on the effects of voltage and current distortion, the fault characteristics as well as a fault diagnosis method for D-EPT are introduced.

K(+) channels of squid giant axons open by an osmotic stress in hypertonic solutions containing nonelectrolytes.

PubMed

Kukita, Fumio

2011-08-01

In hypertonic solutions made by adding nonelectrolytes, K(+) channels of squid giant axons opened at usual asymmetrical K(+) concentrations in two different time courses; an initial instantaneous activation (I (IN)) and a sigmoidal activation typical of a delayed rectifier K(+) channel (I (D)). The current-voltage relation curve for I (IN) was fitted well with Goldman equation described with a periaxonal K(+) concentration at the membrane potential above -10 mV. Using the activation-voltage curve obtained from tail currents, K(+) channels for I (IN) are confirmed to activate at the membrane potential that is lower by 50 mV than those for I (D). Both I (IN) and I (D) closed similarly at the holding potential below -100 mV. The logarithm of I (IN)/I (D) was linearly related with the osmolarity for various nonelectrolytes. Solute inaccessible volumes obtained from the slope increased with the nonelectrolyte size from 15 to 85 water molecules. K(+) channels representing I (D) were blocked by open channel blocker tetra-butyl ammonium (TBA) more efficiently than in the absence of I (IN), which was explained by the mechanism that K(+) channels for I (D) were first converted to those for I (IN) by the osmotic pressure and then blocked. So K(+) channels for I (IN) were suggested to be derived from the delayed rectifier K(+) channels. Therefore, the osmotic pressure is suggested to exert delayed-rectifier K(+) channels to open in shrinking rather hydrophilic flexible parts outside the pore than the pore itself, which is compatible with the recent structure of open K(+) channel pore.

Rectification properties and Ca2+ permeability of glutamate receptor channels in hippocampal cells.

PubMed

Lerma, J; Morales, M; Ibarz, J M; Somohano, F

1994-07-01

Excitatory amino acids exert a depolarizing action on central nervous system cells through an increase in cationic conductances. Non-NMDA receptors have been considered to be selectively permeable to Na+ and K+, while Ca2+ influx has been thought to occur through the NMDA receptor subtype. Recently, however, the expression of cloned non-NMDA receptor subunits has shown that alpha-amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid (AMPA) receptors are permeable to Ca2+ whenever the receptor lacks a particular subunit (edited GluR-B). The behaviour of recombinant glutamate receptor channels predicts that Ca2+ would only permeate through receptors that show strong inward rectification and vice versa, i.e. AMPA receptors with linear current-voltage relationships would be impermeable to Ca2+. Using the whole-cell configuration of the patch-clamp technique, we have studied the Ca2+ permeability and the rectifying properties of AMPA receptors, when activated by kainate, in hippocampal neurons kept in culture or acutely dissociated from differentiated hippocampus. Cells were classified according to whether they showed outward rectifying (type I), inward rectifying (type II) or almost linear (type III) current-voltage relationships for kainate-activated responses. AMPA receptors of type I cells (52.2%) were mostly Ca(2+)-impermeable (PCa/PCs = 0.1), while type II cells (6.5%) expressed Ca(2+)-permeable receptors (PCa/PCs = 0.9). Type III cells (41.3%) showed responses with low but not negligible Ca2+ permeability (PCa/PCs = 0.18). The degree of Ca2+ permeability and inward rectification were well correlated in cultured cells, i.e. more inward rectification corresponded to higher Ca2+ permeability.(ABSTRACT TRUNCATED AT 250 WORDS)

Preparation and characterization of cross-linked poly (vinyl alcohol)-graphene oxide nanocomposites as an interlayer for Schottky barrier diodes

NASA Astrophysics Data System (ADS)

Badrinezhad, Lida; Bilkan, Çigdem; Azizian-Kalandaragh, Yashar; Nematollahzadeh, Ali; Orak, Ikram; Altindal, Şemsettin

2018-01-01

Cross-linked polyvinyl alcohol (PVA) graphene oxide (GO) nanocomposites were prepared by simple solution-mixing route and characterized by Raman, UV-visible and fourier transform infrared (FT-IR) spectroscopy analysis, X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. The XRD pattern and SEM analysis showed significant changes in the nanocomposite structures, and the FT-IR spectroscopy results confirmed the chemical interaction between the GO filler and the PVA matrix. After these morphological characterizations, PVA-GO-based diodes were fabricated and their electrical properties were characterized using current-voltage (I-V) and impedance-voltage-frequency (Z-V-f) measurements at room temperature. Semilogarithmic I-V characteristics of diode showed a good rectifier behavior. The values of C and G/ω increased with decreasing frequency due to the surface/interface states (Nss) which depend on the relaxation time and the frequency of the signal. The voltage, dependent profiles of Nss and series resistance (Rs) were obtained from the methods of high-low frequency capacitance and Nicollian and Brews, respectively. The obtained values of Nss and Rs were attributed to the use of cross-linked PVA-GO interlayer at the Au/n-Si interface.

Saturation of VCMA in out-of-plane magnetized CoFeB/MgO/CoFeB magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Williamson, M.; de Rozieres, M.; Almasi, H.; Chao, X.; Wang, W.; Wang, J.-P.; Tsoi, M.

2018-05-01

Voltage controlled magnetic anisotropy (VCMA) currently attracts considerable attention as a novel method to control and manipulate magnetic moments in high-speed and low-power spintronic applications based on magnetic tunnel junctions (MTJs). In our experiments, we use ferromagnetic resonance (FMR) to study and quantify VCMA in out-of-plane magnetized CoFeB/MgO/CoFeB MTJ pillars. FMR is excited by applying a microwave current and detected via a small rectified voltage which develops across MTJ at resonance. The VCMA effective field can be extracted from the measured resonance field and was found to vary as a function of electrical bias applied to MTJ. At low applied biases, we observe a linear shift of the VCMA field as a function of the applied voltage which is consistent with the VCMA picture based on the bias-induced electron migration across the MgO/CoFeB interface. At higher biases, both positive and negative, we observe a deviation from the linear behavior which may indicate a saturation of the VCMA effect. These results are important for the design of MTJ-based applications.

Membrane potential bistability in nonexcitable cells as described by inward and outward voltage-gated ion channels.

PubMed

Cervera, Javier; Alcaraz, Antonio; Mafe, Salvador

2014-10-30

The membrane potential of nonexcitable cells, defined as the electrical potential difference between the cell cytoplasm and the extracellular environment when the current is zero, is controlled by the individual electrical conductance of different ion channels. In particular, inward- and outward-rectifying voltage-gated channels are crucial for cell hyperpolarization/depolarization processes, being amenable to direct physical study. High (in absolute value) negative membrane potentials are characteristic of terminally differentiated cells, while low membrane potentials are found in relatively depolarized, more plastic cells (e.g., stem, embryonic, and cancer cells). We study theoretically the hyperpolarized and depolarized values of the membrane potential, as well as the possibility to obtain a bistability behavior, using simplified models for the ion channels that regulate this potential. The bistability regions, which are defined in the multidimensional state space determining the cell state, can be relevant for the understanding of the different model cell states and the transitions between them, which are triggered by changes in the external environment.

Size dependent tunnel diode effects in gold tipped CdSe nanodumbbells.

PubMed

Saraf, Deepashri; Kumar, Ashok; Kanhere, Dilip; Kshirsagar, Anjali

2017-02-07

We report simulation results for scanning tunneling spectroscopy of gold-tipped CdSe nanodumbbells of lengths ∼27 Å and ∼78 Å. Present results are based on Bardeen, Tersoff, and Hamann formalism that takes inputs from ab initio calculations. For the shorter nanodumbbell, the current-voltage curves reveal negative differential conductance, the characteristic of a tunnel diode. This behaviour is attributed to highly localized metal induced gap states that rapidly decay towards the center of the nanodumbbell leading to suppression in tunneling. In the longer nanodumbbell, these gap states are absent in the central region, as a consequence of which zero tunneling current is observed in that region. The overall current-voltage characteristics for this nanodumbbell are observed to be largely linear near the metal-semiconductor interface and become rectifying at the central region, the nature being similar to its parent nanorod. The cross-sectional heights of these nanodumbbells also show bias-dependence where we begin to observe giant Stark effect features in the semiconducting central region of the longer nanodumbbell.

High reliability megawatt transformer/rectifier

NASA Technical Reports Server (NTRS)

Zwass, Samuel; Ashe, Harry; Peters, John W.

1991-01-01

The goal of the two phase program is to develop the technology and design and fabricate ultralightweight high reliability DC to DC converters for space power applications. The converters will operate from a 5000 V dc source and deliver 1 MW of power at 100 kV dc. The power weight density goal is 0.1 kg/kW. The cycle to cycle voltage stability goals was + or - 1 percent RMS. The converter is to operate at an ambient temperature of -40 C with 16 minute power pulses and one hour off time. The uniqueness of the design in Phase 1 resided in the dc switching array which operates the converter at 20 kHz using Hollotron plasma switches along with a specially designed low loss, low leakage inductance and a light weight high voltage transformer. This approach reduced considerably the number of components in the converter thereby increasing the system reliability. To achieve an optimum transformer for this application, the design uses four 25 kV secondary windings to produce the 100 kV dc output, thus reducing the transformer leakage inductance, and the ac voltage stresses. A specially designed insulation system improves the high voltage dielectric withstanding ability and reduces the insulation path thickness thereby reducing the component weight. Tradeoff studies and tests conducted on scaled-down model circuits and using representative coil insulation paths have verified the calculated transformer wave shape parameters and the insulation system safety. In Phase 1 of the program a converter design approach was developed and a preliminary transformer design was completed. A fault control circuit was designed and a thermal profile of the converter was also developed.

Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

NASA Astrophysics Data System (ADS)

Pandit, Bhishma; Seo, Tae Hoon; Ryu, Beo Deul; Cho, Jaehee

2016-06-01

The current transport mechanism of graphene formed on AlxGa1-xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current-voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying property. The extracted Schottky barrier height of the graphene/AlGaN/GaN contacts increases with the Al mole fraction in AlGaN. However, the current transport mechanism deviates from the Schottky-Mott theory owing to the deterioration of AlGaN crystal quality at high Al mole fractions confirmed by reverse leakage current measurement.

Inward rectifier potassium channels in the HL-1 cardiomyocyte-derived cell line.

PubMed

Goldoni, Dana; Zhao, YouYou; Green, Brian D; McDermott, Barbara J; Collins, Anthony

2010-11-01

HL-1 is a line of immortalized cells of cardiomyocyte origin that are a useful complement to native cardiomyocytes in studies of cardiac gene regulation. Several types of ion channel have been identified in these cells, but not the physiologically important inward rectifier K(+) channels. Our aim was to identify and characterize inward rectifier K(+) channels in HL-1 cells. External Ba(2+) (100 µM) inhibited 44 ± 0.05% (mean ± s.e.m., n = 11) of inward current in whole-cell patch-clamp recordings. The reversal potential of the Ba(2+)-sensitive current shifted with external [K(+)] as expected for K(+)-selective channels. The slope conductance of the inward Ba(2+)-sensitive current increased with external [K(+)]. The apparent Kd for Ba(2+) was voltage dependent, ranging from 15 µM at -150  mV to 148 µM at -75  mV in 120  mM external K(+). This current was insensitive to 10 µM glybenclamide. A component of whole-cell current was sensitive to 150 µM 4,4'-diisothiocyanatostilbene-2,2'-disulfonic acid (DIDS), although it did not correspond to the Ba(2+)-sensitive component. The effect of external 1 mM Cs(+) was similar to that of Ba(2+). Polymerase chain reaction using HL-1 cDNA as template and primers specific for the cardiac inward rectifier K(ir)2.1 produced a fragment of the expected size that was confirmed to be K(ir)2.1 by DNA sequencing. In conclusion, HL-1 cells express a current that is characteristic of cardiac inward rectifier K(+) channels, and express K(ir)2.1 mRNA. This cell line may have use as a system for studying inward rectifier gene regulation in a cardiomyocyte phenotype. © 2010 Wiley-Liss, Inc.

Point mutation of a conserved aspartate, D69, in the muscarinic M2 receptor does not modify voltage-sensitive agonist potency.

PubMed

Ågren, Richard; Sahlholm, Kristoffer; Nilsson, Johanna; Århem, Peter

2018-01-29

The muscarinic M 2 receptor (M 2 R) has been shown to display voltage-sensitive agonist binding, based on G protein-activated inward rectifier potassium channel (GIRK) opening and radioligand binding at different membrane voltages. A conserved aspartate in transmembrane segment (TM) II of M 2 R, D69, has been proposed as the voltage sensor. While a recent paper instead presented evidence of tyrosines in TMs III, VI, and VII acting as voltage sensors, these authors were not able to record GIRK channel activation by a D69N mutant M 2 R. In the present study, we succeeded in recording ACh-induced GIRK channel activation by this mutant at -80 and 0 mV. The acetylcholine EC 50 was about 2.5-fold higher at 0 mV, a potency shift very similar to that observed at wild-type M 2 R, indicating that voltage sensitivity persists at the D69N mutant. Thus, our present observations corroborate the notion that D69 is not responsible for voltage sensitivity of the M 2 R. Copyright © 2018 Elsevier Inc. All rights reserved.

Ultraviolet electroluminescence from hetero p-n junction between a single ZnO microsphere and p-GaN thin film.

PubMed

Tetsuyama, Norihiro; Fusazaki, Koshi; Mizokami, Yasuaki; Shimogaki, Tetsuya; Higashihata, Mitsuhiro; Nakamura, Daisuke; Okada, Tatsuo

2014-04-21

We report ultraviolet electroluminescence from a hetero p-n junction between a single ZnO microsphere and p-GaN thin film. ZnO microspheres, which have high crystalline quality, have been synthesized by ablating a ZnO sintered target. It was found that synthesized ZnO microspheres had a high-optical property and exhibit the laser action in the whispering gallery mode under pulsed optical pumping. A hetero p-n junction was formed between the single ZnO microsphere/ p-GaN thin film, and a good rectifying property with a turn-on voltage of approximately 6 V was observed in I-V characteristic across the junction. Ultraviolet and visible electroluminescence were observed under forward bias.

A metamaterial electromagnetic energy rectifying surface with high harvesting efficiency

NASA Astrophysics Data System (ADS)

Duan, Xin; Chen, Xing; Zhou, Lin

2016-12-01

A novel metamaterial rectifying surface (MRS) for electromagnetic energy capture and rectification with high harvesting efficiency is presented. It is fabricated on a three-layer printed circuit board, which comprises an array of periodic metamaterial particles in the shape of mirrored split rings, a metal ground, and integrated rectifiers employing Schottky diodes. Perfect impedance matching is engineered at two interfaces, i.e. one between free space and the surface, and the other between the metamaterial particles and the rectifiers, which are connected through optimally positioned vias. Therefore, the incident electromagnetic power is captured with almost no reflection by the metamaterial particles, then channeled maximally to the rectifiers, and finally converted to direct current efficiently. Moreover, the rectifiers are behind the metal ground, avoiding the disturbance of high power incident electromagnetic waves. Such a MRS working at 2.45 GHz is designed, manufactured and measured, achieving a harvesting efficiency up to 66.9% under an incident power density of 5 mW/cm2, compared with a simulated efficiency of 72.9%. This high harvesting efficiency makes the proposed MRS an effective receiving device in practical microwave power transmission applications.

A low power on-chip class-E power amplifier for remotely powered implantable sensor systems

NASA Astrophysics Data System (ADS)

Ture, Kerim; Kilinc, Enver G.; Dehollain, Catherine

2015-06-01

This paper presents a low power fully integrated class-E power amplifier and its integration with remotely powered sensor system. The class-E power amplifier is suitable solution for low-power applications due to its high power efficiency. However, the required high inductance values which make the on-chip integration of the power amplifier difficult. The designed power amplifier is fully integrated in the remotely powered sensor system and fabricated in 0.18 μm CMOS process. The power is transferred to the implantable sensor system at 13.56 MHz by using an inductively coupled remote powering link. The induced AC voltage on the implant coil is converted into a DC voltage by a passive full-wave rectifier. A voltage regulator is used to suppress the ripples and create a clean and stable 1.8 V supply voltage for the sensor and communication blocks. The data collected from the sensors is transmitted by on-off keying modulated low-power transmitter at 1.2 GHz frequency. The transmitter is composed of a LC tank oscillator and a fully on-chip class-E power amplifier. An additional output network is used for the power amplifier which makes the integration of the power amplifier fully on-chip. The integrated power amplifier with 0.2 V supply voltage has a drain efficiency of 31.5% at -10 dBm output power for 50 Ω load. The measurement results verify the functionality of the power amplifier and the remotely powered implantable sensor system. The data communication is also verified by using a commercial 50 Ω chip antenna and has 600 kbps data rate at 1 m communication distance.

The protein kinase C inhibitor, bisindolylmaleimide (I), inhibits voltage-dependent K+ channels in coronary arterial smooth muscle cells.

PubMed

Park, Won Sun; Son, Youn Kyoung; Ko, Eun A; Ko, Jae-Hong; Lee, Hyang Ae; Park, Kyoung Sun; Earm, Yung E

2005-06-17

We examined the effects of the protein kinase C (PKC) inhibitor, bisindolylmaleimide (BIM) (I), on voltage-dependent K+ (K(V)) channels in rabbit coronary arterial smooth muscle cells using whole-cell patch clamp technique. BIM (I) reversibly and dose-dependently inhibited the K(V) currents with an apparent Kd value of 0.27 microM. The inhibition of the K(V) current by BIM (I) was highly voltage-dependent between -30 and +10 mV (voltage range of channel activation), and the additive inhibition of the K(V) current by BIM (I) was voltage-dependence in the full activation voltage range. The rate constants of association and dissociation for BIM (I) were 18.4 microM(-1) s(-1) and 4.7 s(-1), respectively. BIM (I) had no effect on the steady-state activation and inactivation of K(V) channels. BIM (I) caused use-dependent inhibition of K(V) current, which was consistent with the slow recovery from inactivation in the presence of BIM (I) (recovery time constants were 856.95 +/- 282.6 ms for control, and 1806.38 +/- 110.0 ms for 300 nM BIM (I)). ATP-sensitive K+ (K(ATP)), inward rectifier K+ (K(IR)), Ca2+-activated K+ (BK(Ca)) channels, which regulate the membrane potential and arterial tone, were not affected by BIM (I). The PKC inhibitor, chelerythrine, and protein kinase A (PKA) inhibitor, PKA-IP, had little effect on the K(V) current and did not significantly alter the inhibitory effects of BIM (I) on the K(V) current. These results suggest that BIM (I) inhibits K(V) channels in a phosphorylation-independent, and voltage-, time- and use-dependent manner.

The electrical properties of n-ZnO/p-SnO heterojunction diodes

NASA Astrophysics Data System (ADS)

Javaid, K.; Xie, Y. F.; Luo, H.; Wang, M.; Zhang, H. L.; Gao, J. H.; Zhuge, F.; Liang, L. Y.; Cao, H. T.

2016-09-01

In the present work, n-type zinc oxide (ZnO) and p-type tin monoxide (SnO) based heterostructure diodes were fabricated on an indium-tin-oxide glass using the radio frequency magnetron sputtering technique. The prepared ZnO/SnO diodes exhibited a typical rectifying behavior, with a forward to reverse current ratio about 500 ± 5 at 2 V and turn on voltage around 1.6 V. The built-in voltage of the diode was extracted to be 0.5 V based on the capacitance-voltage (C-V) measurement. The valence and conduction band offsets were deliberated through the band energy diagram of ZnO/SnO heterojunction, as 1.08 eV and 0.41 eV, respectively. The potential barrier-dependent carrier transportation mechanism across the space charge region was also investigated.

Ga2O3 Schottky barrier and heterojunction diodes for power electronics applications

NASA Astrophysics Data System (ADS)

Tadjer, Marko J.; Mahadik, Nadeemullah A.; Freitas, Jaime A.; Glaser, Evan R.; Koehler, Andrew D.; Luna, Lunet E.; Feigelson, Boris N.; Hobart, Karl D.; Kub, Fritz J.; Kuramata, A.

2018-02-01

We present novel approaches for the development of Ga2O3 Schottky barrier and heterojunction diodes. Samples of β- Ga2O3 were first annealed in N2 and O2 to demonstrate the effect of annealing on the carrier concentration. Cathodoluminescence and electron spin resonance measurements were also performed. Schottky barrier diodes on asgrown and O2-annealed epitaxial Ga2O3 films were fabricated and breakdown voltages were compared. Lower reverse current and a breakdown voltage of about 857 V were measured on the O2-annealed device. Finally, we report preliminary results from the development of anisotype heterojunctions between n-type Ga2O3 with a sputtered NiO layer. Rectifying current-voltage characteristics were obtained when the NiO was deposited both at room temperature and at 450 °C.

Activation of µ-opioid receptors and block of KIR3 potassium channels and NMDA receptor conductance by l- and d-methadone in rat locus coeruleus

PubMed Central

Matsui, Aya; Williams, John T

2010-01-01

BACKGROUND AND PURPOSE Methadone activates opioid receptors to increase a potassium conductance mediated by G-protein-coupled, inwardly rectifying, potassium (KIR3) channels. Methadone also blocks KIR3 channels and N-methyl-D-aspartic acid (NMDA) receptors. However, the concentration dependence and stereospecificity of receptor activation and channel blockade by methadone on single neurons has not been characterized. EXPERIMENTAL APPROACH Intracellular and whole-cell recording were made from locus coeruleus neurons in brain slices and the activation of µ-opioid receptors and blockade of KIR3 and NMDA channels with l- and d-methadone was examined. KEY RESULTS The potency of l-methadone, measured by the amplitude of hyperpolarization was 16.5-fold higher than with d-methadone. A maximum hyperpolarization was caused by both enantiomers (∼30 mV); however, the maximum outward current measured with whole-cell voltage-clamp recording was smaller than the current induced by [Met]5enkephalin. The KIR3 conductance induced by activation of α2-adrenoceptors was decreased with high concentrations of l- and d-methadone (10–30 µM). In addition, methadone blocked the resting inward rectifying conductance (KIR). Both l- and d-methadone blocked the NMDA receptor-dependent current. The block of NMDA receptor-dependent current was voltage-dependent suggesting that methadone acted as a channel blocker. CONCLUSIONS AND IMPLICATIONS Methadone activated µ-opioid receptors at low concentrations in a stereospecific manner. KIR3 and NMDA receptor channel block was not stereospecific and required substantially higher concentrations. The separation in the concentration range suggests that the activation of µ-opioid receptors rather than the channel blocking properties mediate both the therapeutic and toxic actions of methadone. PMID:20659105

Electron transport through rectifying self-assembled monolayer diodes on silicon: Fermi-level pinning at the molecule-metal interface.

PubMed

Lenfant, S; Guerin, D; Tran Van, F; Chevrot, C; Palacin, S; Bourgoin, J P; Bouloussa, O; Rondelez, F; Vuillaume, D

2006-07-20

We report the synthesis and characterization of molecular rectifying diodes on silicon using sequential grafting of self-assembled monolayers of alkyl chains bearing a pi group at their outer end (Si/sigma-pi/metal junctions). We investigate the structure-performance relationships of these molecular devices, and we examine the extent to which the nature of the pi end group (change in the energy position of their molecular orbitals) drives the properties of these molecular diodes. Self-assembled monolayers of alkyl chains (different chain lengths from 6 to 15 methylene groups) functionalized by phenyl, anthracene, pyrene, ethylene dioxythiophene, ethylene dioxyphenyl, thiophene, terthiophene, and quaterthiophene were synthesized and characterized by contact angle measurements, ellipsometry, Fourier transform infrared spectroscopy, and atomic force microscopy. We demonstrate that reasonably well-packed monolayers are obtained in all cases. Their electrical properties were assessed by dc current-voltage characteristics and high-frequency (1-MHz) capacitance measurements. For all of the pi groups investigated here, we observed rectification behavior. These results extend our preliminary work using phenyl and thiophene groups (Lenfant et al., Nano Lett. 2003, 3, 741). The experimental current-voltage curves were analyzed with a simple analytical model, from which we extracted the energy position of the molecular orbital of the pi group in resonance with the Fermi energy of the electrodes. We report experimental studies of the band lineup in these silicon/alkyl pi-conjugated molecule/metal junctions. We conclude that Fermi-level pinning at the pi group/metal interface is mainly responsible for the observed absence of a dependence of the rectification effect on the nature of the pi groups, even though the groups examined were selected to have significant variations in their electronic molecular orbitals.

Triple Hybrid Energy Harvesting Interface Electronics

NASA Astrophysics Data System (ADS)

Uluşan, H.; Chamanian, S.; Pathirana, W. M. P. R.; Zorlu, Ö.; Muhtaroğlu, A.; Külah, H.

2016-11-01

This study presents a novel triple hybrid system that combines simultaneously generated power from thermoelectric (TE), vibration-based electromagnetic (EM) and piezoelectric (PZT) harvesters for a relatively high power supply capability. In the proposed solution each harvesting source utilizes a distinct power management circuit that generates a DC voltage suitable for combining the three parallel supplies. The circuits are designed and implemented in 180 nm standard CMOS technology, and are terminated with a schottky diode to avoid reverse current flow. The harvested AC signal from the EM harvester is rectified with a self-powered AC-DC doubler, which utilizes active diode structures to minimize the forward- bias voltage drop. The PZT interface electronics utilizes a negative voltage converter as the first stage, followed by synchronous power extraction and DC-to-DC conversion through internal switches, and an external inductor. The ultra-low voltage DC power harvested by the TE generator is stepped up through a charge-pump driven by an LC oscillator with fully- integrated center-tapped differential inductors. Test results indicate that hybrid energy harvesting circuit provides more than 1 V output for load resistances higher than 100 kΩ (10 μW) where the stand-alone harvesting circuits are not able to reach 1 V output. This is the first hybrid harvester circuit that simultaneously extracts energy from three independent sources, and delivers a single DC output.

Compensated gain control circuit for buck regulator command charge circuit

DOEpatents

Barrett, David M.

1996-01-01

A buck regulator command charge circuit includes a compensated-gain control signal for compensating for changes in the component values in order to achieve optimal voltage regulation. The compensated-gain control circuit includes an automatic-gain control circuit for generating a variable-gain control signal. The automatic-gain control circuit is formed of a precision rectifier circuit, a filter network, an error amplifier, and an integrator circuit.

Compensated gain control circuit for buck regulator command charge circuit

DOEpatents

Barrett, D.M.

1996-11-05

A buck regulator command charge circuit includes a compensated-gain control signal for compensating for changes in the component values in order to achieve optimal voltage regulation. The compensated-gain control circuit includes an automatic-gain control circuit for generating a variable-gain control signal. The automatic-gain control circuit is formed of a precision rectifier circuit, a filter network, an error amplifier, and an integrator circuit. 5 figs.

Transparent War Fighter Recharging

DTIC Science & Technology

2014-10-17

taken by loading the rectified DC voltage in Soldier’s electronics pack. It does not include the efficiency of the battery charger . Figure 9...and battery charger ) Receive Weight -- -- 0.1lb .413 lbs, not including enclosure Compliance FCC FCC Not tested but designed for compliance Table 5...receiver and battery charger Total 2.66 Table 6- Component Weights Vest Transmitter Component Weight in lbs Rx Coil .175 Secondary Charger PCBA .238 Total

Mibefradil (Ro 40-5967) inhibits several Ca2+ and K+ currents in human fusion-competent myoblasts

PubMed Central

Liu, Jian-Hui; Bijlenga, Philippe; Occhiodoro, Teresa; Fischer-Lougheed, Jacqueline; Bader, Charles R; Bernheim, Laurent

1999-01-01

The effect of mibefradil (Ro 40-5967), an inhibitor of T-type Ca2+ current (ICa(T)), on myoblast fusion and on several voltage-gated currents expressed by fusion-competent myoblasts was examined.At a concentration of 5 μM, mibefradil decreases myoblast fusion by 57%. At this concentration, the peak amplitudes of ICa(T) and L-type Ca2+ current (ICa(L)) measured in fusion-competent myoblasts are reduced by 95 and 80%, respectively. The IC50 of mibefradil for ICa(T) and ICa(L) are 0.7 and 2 μM, respectively.At low concentrations, mibefradil increased the amplitude of ICa(L) with respect to control.Mibefradil blocked three voltage-gated K+ currents expressed by human fusion-competent myoblasts: a delayed rectifier K+ current, an ether-à-go-go K+ current, and an inward rectifier K+ current, with a respective IC50 of 0.3, 0.7 and 5.6 μM.It is concluded that mibefradil can interfere with myoblast fusion, a mechanism fundamental to muscle growth and repair, and that the interpretation of the effect of mibefradil in a given system should take into account the action of this drug on ionic currents other than Ca2+ currents. PMID:10051142

Simplified ZrTiO x -based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode.

PubMed

Lin, Chia-Chun; Wu, Yung-Hsien; Chang, You-Tai; Sun, Cherng-En

2014-01-01

A simplified one-diode one-resistor (1D1R) resistive switching memory cell that uses only four layers of TaN/ZrTiO x /Ni/n(+)-Si was proposed to suppress sneak current where TaN/ZrTiO x /Ni can be regarded as a resistive-switching random access memory (RRAM) device while Ni/n(+)-Si acts as an Schottky diode. This is the first RRAM cell structure that employs metal/semiconductor Schottky diode for current rectifying. The 1D1R cell exhibits bipolar switching behavior with SET/RESET voltage close to 1 V without requiring a forming process. More importantly, the cell shows tight resistance distribution for different states, significantly rectifying characteristics with forward/reverse current ratio higher than 10(3) and a resistance ratio larger than 10(3) between two states. Furthermore, the cell also displays desirable reliability performance in terms of long data retention time of up to 10(4) s and robust endurance of 10(5) cycles. Based on the promising characteristics, the four-layer 1D1R structure holds the great potential for next-generation nonvolatile memory technology.

A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density

NASA Astrophysics Data System (ADS)

Jin, Jidong; Zhang, Jiawei; Shaw, Andrew; Kudina, Valeriya N.; Mitrovic, Ivona Z.; Wrench, Jacqueline S.; Chalker, Paul R.; Balocco, Claudio; Song, Aimin; Hall, Steve

2018-02-01

Zinc oxide (ZnO) has recently attracted attention for its potential application to high speed electronics. In this work, a high speed Schottky diode rectifier was fabricated based on a ZnO thin film deposited by plasma-enhanced atomic layer deposition and a PtOx Schottky contact deposited by reactive radio-frequency sputtering. The rectifier shows an ideality factor of 1.31, an effective barrier height of 0.79 eV, a rectification ratio of 1.17  ×  107, and cut-off frequency as high as 550 MHz. Low frequency noise measurements reveal that the rectifier has a low interface-state density of 5.13  ×  1012 cm-2 eV-1, and the noise is dominated by the mechanism of a random walk of electrons at the PtO x /ZnO interface. The work shows that the rectifier can be used for both noise sensitive and high frequency electronics applications.

Separate Cl^- Conductances Activated by cAMP and Ca2+ in Cl^--Secreting Epithelial Cells

NASA Astrophysics Data System (ADS)

Cliff, William H.; Frizzell, Raymond A.

1990-07-01

We studied the cAMP- and Ca2+-activated secretory Cl^- conductances in the Cl^--secreting colonic epithelial cell line T84 using the whole-cell patch-clamp technique. Cl^- and K^+ currents were measured under voltage clamp. Forskolin or cAMP increased Cl^- current 2-15 times with no change in K^+ current. The current-voltage relation for cAMP-activated Cl^- current was linear from -100 to +100 mV and showed no time-dependent changes in current during voltage pulses. Ca2+ ionophores or increased pipette Ca2+ increased both Cl^- and K^+ currents 2-30 times. The Ca2+-activated Cl^- current was outwardly rectified, activated during depolarizing voltage pulses, and inactivated during hyperpolarizing voltage pulses. Addition of ionophore after forskolin further increased Cl^- conductance 1.5-5 times, and the current took on the time-dependent characteristics of that stimulated by Ca2+. Thus, cAMP and Ca2+ activate Cl^- conductances with different properties, implying that these second messengers activate different Cl^- channels or that they induce different conductive and kinetic states in the same Cl^- channel.

Dual patch voltage clamp study of low membrane resistance astrocytes in situ.

PubMed

Ma, Baofeng; Xu, Guangjin; Wang, Wei; Enyeart, John J; Zhou, Min

2014-03-17

Whole-cell patch clamp recording has been successfully used in identifying the voltage-dependent gating and conductance properties of ion channels in a variety of cells. However, this powerful technique is of limited value in studying low membrane resistance cells, such as astrocytes in situ, because of the inability to control or accurately measure the real amplitude of command voltages. To facilitate the study of ionic conductances of astrocytes, we have developed a dual patch recording method which permits membrane current and membrane potential to be simultaneously recorded from astrocytes in spite of their extraordinarily low membrane resistance. The utility of this technique is demonstrated by measuring the voltage-dependent activation of the inwardly rectifying K+ current abundantly expressed in astrocytes and multiple ionic events associated with astrocytic GABAA receptor activation. This protocol can be performed routinely in the study of astrocytes. This method will be valuable for identifying and characterizing the individual ion channels that orchestrate the electrical activity of low membrane resistance cells.

Blockade of HERG human K+ channel and IKr of guinea pig cardiomyocytes by prochlorperazine.

PubMed

Kim, Moon-Doo; Eun, Su-Yong; Jo, Su-Hyun

2006-08-21

Prochlorperazine, a drug for the symptomatic control of nausea, vomiting and psychiatric disorders, can induce prolonged QT, torsades de pointes and sudden death. We studied the effects of prochlorperazine on human ether-a-go-go-related gene (HERG) channels expressed in Xenopus oocytes and also in the delayed rectifier K+ current of guinea pig cardiomyocytes. Prochlorperazine induced a concentration-dependent decrease in current amplitudes at the end of the voltage steps and tail currents of HERG. The IC50 for a prochlorperazine block of HERG current in Xenopus oocytes progressively decreased relative to the degree of depolarization, from 42.1 microM at -40 mV to 37.4 microM at 0 mV to 22.6 microM at +40 mV. The block of HERG by prochlorperazine was use-dependent, exhibiting a more rapid onset and a greater steady-state block at higher frequencies of activation, while there was partial relief of the block with reduced frequencies. In guinea pig ventricular myocytes, bath applications of 0.5 and 1 muM prochlorperazine at 36 degrees C blocked rapidly activating delayed rectifier K+ current by 38.9% and 76.5%, respectively, but did not significantly block slowly activating delayed rectifier K+ current. Our findings suggest that the arrhythmogenic side effects of prochlorperazine are caused by a blockade of HERG and the rapid component of the delayed rectifier K+ current rather than by a blockade of the slow component.

Monolithically integrated two-dimensional arrays of optoelectronic threshold devices for neural network applications

NASA Technical Reports Server (NTRS)

Kim, J. H.; Katz, J.; Lin, S. H.; Psaltis, D.

1989-01-01

A monolithic 10 x 10 two-dimensional array of 'optical neuron' optoelectronic threshold elements for neural network applications has been designed, fabricated, and tested. Overall array dimensions are 5 x 5 mm, while the individual neurons, composed of an LED that is driven by a double-heterojunction bipolar transistor, are 250 x 250 microns. The overall integrated structure exhibited semiconductor-controlled rectifier characteristics, with a breakover voltage of 75 V and a reverse-breakdown voltage of 60 V; this is attributable to the parasitic p-n-p transistor which exists as a result of the sharing of the same n-AlGaAs collector between the transistors and the LED.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chinthavali, Madhu Sudhan; Campbell, Steven L

This paper presents an analytical model for wireless power transfer system used in electric vehicle application. The equivalent circuit model for each major component of the system is described, including the input voltage source, resonant network, transformer, nonlinear diode rectifier load, etc. Based on the circuit model, the primary side compensation capacitance, equivalent input impedance, active / reactive power are calculated, which provides a guideline for parameter selection. Moreover, the voltage gain curve from dc output to dc input is derived as well. A hardware prototype with series-parallel resonant stage is built to verify the developed model. The experimental resultsmore » from the hardware are compared with the model predicted results to show the validity of the model.« less

High sensitivity Schottky junction diode based on monolithically grown aligned polypyrrole nanofibers: Broad range detection of m-dihydroxybenzene.

PubMed

Ameen, Sadia; Akhtar, M Shaheer; Seo, Hyung-Kee; Shin, Hyung Shik

2015-07-30

Aligned p-type polypyrrole (PPy) nanofibers (NFs) thin film was grown on n-type silicon (100) substrate by an electrochemical technique to fabricate Schottky junction diode for the efficient detection of m-dihydroxybenzene chemical. The highly dense and well aligned PPy NFs with the average diameter (∼150-200 nm) were grown on n-type Si substrate. The formation of aligned PPy NFs was confirmed by elucidating the structural, compositional and the optical properties. The electrochemical behavior of the fabricated Pt/p-aligned PPy NFs/n-silicon Schottky junction diode was evaluated by cyclovoltametry (CV) and current (I)-voltage (V) measurements with the variation of m-dihydroxybenzene concentration in the phosphate buffer solution (PBS). The fabricated Pt/p-aligned PPy NFs/n-silicon Schottky junction diode exhibited the rectifying behavior of I-V curve with the addition of m-dihydroxybenzene chemical, while a weak rectifying I-V behavior was observed without m-dihydroxybenzene chemical. This non-linear I-V behavior suggested the formation of Schottky barrier at the interface of Pt layer and p-aligned PPy NFs/n-silicon thin film layer. By analyzing the I-V characteristics, the fabricated Pt/p-aligned PPy NFs/n-silicon Schottky junction diode displayed reasonably high sensitivity ∼23.67 μAmM(-1)cm(-2), good detection limit of ∼1.51 mM with correlation coefficient (R) of ∼0.9966 and short response time (10 s). Copyright © 2015 Elsevier B.V. All rights reserved.

Interface state density distribution in Au/n-ZnO nanorods Schottky diodes

NASA Astrophysics Data System (ADS)

Faraz, S. M.; Willander, M.; Wahab, Q.

2012-04-01

Interface states density (NSS) distribution is extracted in Au/ ZnO Schottky diodes. Nanorods of ZnO are grown on silver (Ag) using aqueous chemical growth (ACG) technique. Well aligned hexagonal-shaped vertical nanorods of a mean diameter of 300 - 450 nm and 1.3 -1.9 μm high are revealed in SEM. Gold (Au) Schottky contacts of thickness 60 nm and 1.5mm diameter were evaporated. For electrical characterization of Schottky diodes current-voltage (I-V) and capacitance-Voltage (C-V) measurements are performed. The diodes exhibited a typical non-linear rectifying behavior with a barrier height of 0.62eV and ideality factor of 4.3. Possible reasons for low barrier height and high ideality factor have been addressed. Series resistance (RS) has been calculated from forward I-V characteristics using Chueng's function. The density of interfacial states (NSS) below the conduction band (EC-ESS) is extracted using I-V and C-V measured values. A decrease in interface states density (NSS) is observed from 3.74 × 1011 - 7.98 × 1010 eV-1 cm-2 from 0.30eV - 0.61eV below the conduction band edge.

Ion Conduction through the hERG Potassium Channel

PubMed Central

Cavalli, Andrea; Recanatini, Maurizio

2012-01-01

The inward rectifier voltage-gated potassium channel hERG is of primary importance for the regulation of the membrane potential of cardiomyocytes. Unlike most voltage-gated K+-channels, hERG shows a low elementary conductance at physiological voltage and potassium concentration. To investigate the molecular features underlying this unusual behavior, we simulated the ion conduction through the selectivity filter at a fully atomistic level by means of molecular dynamics-based methods, using a homology-derived model. According to our calculations, permeation of potassium ions can occur along two pathways, one involving site vacancies inside the filter (showing an energy barrier of about 6 kcal mol−1), and the other characterized by the presence of a knock-on intermediate (about 8 kcal mol−1). These barriers are indeed in accordance with a low conductance behavior, and can be explained in terms of a series of distinctive structural features displayed by the hERG ion permeation pathway. PMID:23133669

Design and preliminary test results of the 40 MW power supply at the national high magnetic field laboratory

NASA Astrophysics Data System (ADS)

Boenig, Heinrich J.; Bogdan, Ferenc; Morris, Gary C.; Ferner, James A.; Schneider-Muntau, Hans J.; Rumrill, Ronald H.; Rumrill, Ronald S.

1994-07-01

Four highly stabilized, steady-state, 10 MW power supplies have been installed at the National High Magnetic Field Laboratory in Tallahassee, FL. Each supply consists of a 12.5 kV vacuum circuit breaker, two three-winding, step-down transformers, a 24-pulse rectifier with interphase reactors and freewheeling diodes, and a passive and an active filter. Two different transformer tap settings allow dc supply output voltages of 400 and 500 V. The rated current of a supply is 17 kA and each supply has a one hour overload capability of 20 kA. The power supply output bus system, including a reversing switch at the input and 2 x 16 disconnect switches at the output, connects each supply to 16 different magnet cells. The design of the power supply is described and preliminary test results with a supply feeding a 10 MW resistive load are presented.

Series-Connected Buck Boost Regulators

NASA Technical Reports Server (NTRS)

Birchenough, Arthur G.

2005-01-01

A series-connected buck boost regulator (SCBBR) is an electronic circuit that bucks a power-supply voltage to a lower regulated value or boosts it to a higher regulated value. The concept of the SCBBR is a generalization of the concept of the SCBR, which was reported in "Series-Connected Boost Regulators" (LEW-15918), NASA Tech Briefs, Vol. 23, No. 7 (July 1997), page 42. Relative to prior DC-voltage-regulator concepts, the SCBBR concept can yield significant reductions in weight and increases in power-conversion efficiency in many applications in which input/output voltage ratios are relatively small and isolation is not required, as solar-array regulation or battery charging with DC-bus regulation. Usually, a DC voltage regulator is designed to include a DC-to-DC converter to reduce its power loss, size, and weight. Advances in components, increases in operating frequencies, and improved circuit topologies have led to continual increases in efficiency and/or decreases in the sizes and weights of DC voltage regulators. The primary source of inefficiency in the DC-to-DC converter portion of a voltage regulator is the conduction loss and, especially at high frequencies, the switching loss. Although improved components and topology can reduce the switching loss, the reduction is limited by the fact that the converter generally switches all the power being regulated. Like the SCBR concept, the SCBBR concept involves a circuit configuration in which only a fraction of the power is switched, so that the switching loss is reduced by an amount that is largely independent of the specific components and circuit topology used. In an SCBBR, the amount of power switched by the DC-to-DC converter is only the amount needed to make up the difference between the input and output bus voltage. The remaining majority of the power passes through the converter without being switched. The weight and power loss of a DC-to-DC converter are determined primarily by the amount of power processed. In the SCBBR, the unswitched majority of the power is passed through with very little power loss, and little if any increase in the sizes of the converter components is needed to enable the components to handle the unswitched power. As a result, the power-conversion efficiency of the regulator can be very high, as shown in the example of Figure 1. A basic SCBBR includes a DC-to-DC converter (see Figure 2). The switches and primary winding of a transformer in the converter is connected across the input bus, while the secondary winding and switches are connected in series with the output bus, so that the output voltage is the sum of the input voltage and the secondary voltage of the converter. In the breadboard SCBBR, the input voltage applied to the primary winding is switched by use of metal oxide/semiconductor field-effect transistors (MOSFETs) in a full bridge circuit; the secondary winding is center-tapped, with two MOSFET switches and diode rectifiers connected in opposed series in each leg. The sets of opposed switches and rectifiers are what enable operation in either a boost or a buck mode. In the boost mode, input voltage and current, and the output voltage and current are all positive; that is, the secondary voltage is added to the input voltage and the net output voltage can be regulated at a value equal or greater than the input voltage. In the buck mode, input voltage is still positive and the current still flows in the same direction in the secondary, but the switches are controlled such that some power flows from the secondary to the primary. The voltage across the secondary and the current into the primary are reversed. The result is that the output voltage is lower than the input voltage, and some power is recirculated from the converter secondary back to the input. Quantitatively, the advantage of an SCBBR is a direct function of the regulation range required. If, for example, a regulation range of 20 percent is required for a 500-W supply, th it suffices to design the DC-to-DC converter in the SCBBR for a power rating of only 100 W. The switching loss and size are much smaller than those of a conventional regulator that must be rated for switching of all 500 W. The reduction in size and the increase in efficiency are not directly proportional to switched-power ratio of 5:1 because the additional switches contribute some conduction loss and the input and output filters must be larger than those typically required for a 100-W converter. Nevertheless, the power loss and the size can be much smaller than those of a 500-W converter.

Novel High-Voltage, High-Power Piezoelectric Transformer Developed and Demonstrated for Space Communications Applications

NASA Technical Reports Server (NTRS)

Carazo, Alfredo V.; Wintucky, Edwin G.

2004-01-01

Improvements in individual piezoelectric transformer (PT) performance and the combination of these PTs in a unique modular topology under a Phase I contract with the NASA Glenn Research Center have enabled for the first time the simultaneous achievement of both high voltage and high power at much higher levels than previously obtained with any PT. Feasibility was demonstrated by a prototype transformer (called a Tap-Soner), which is shown in the preceding photograph as part of a direct-current to direct-current (dc-dc) converter having two outputs rated at 1.5 kV/5 W and 4.5 kV/20 W. The power density of 3.5 W/cm3 is significantly lower than for magnetic transformers with the same voltage and power output. This development, which is being done under a Small Business Innovation Research (SBIR) contract by Face Electronics, LC (Norfolk, VA), is based on improvements in the materials and design of Face's basic patented Transoner-T3 PT, shown in the left in the following figure. The T3 PT is most simply described as a resonant multilayer transducer where electrical energy at the input section is efficiently mechanically coupled to the output section, which then vibrates in a fundamental longitudinal mode to generate a high gain in voltage. The piezoelectric material used is a modified lead-zirconium-titanate-based ceramic. One of the significant improvements in PT design was the incorporation of a symmetrical double input layer, shown on the right in the following figure, which eliminated the lossy bending vibration modes characteristic of a single input layer. The performance of the improved PT was optimized to 1.5 kV/5 W. The next step was devising a way to combine the individual PTs in a modular circuit topology needed to achieve the desired high voltage and power output. Since the optimum performance of the individual PT occurs at resonance, the most efficient operation of the modular transformer was achieved by using a separate drive circuit for each PT. The output section consists of a separate output rectifier for each PT connected in series.

Carbon Nano-particle Synthesized by Pulsed Arc Discharge Method as a Light Emitting Device

NASA Astrophysics Data System (ADS)

Ahmadi, Ramin; Ahmadi, Mohamad Taghi; Ismail, Razali

2018-07-01

Owing to the specific properties such as high mobility, ballistic carrier transport and light emission, carbon nano-particles (CNPs) have been employed in nanotechnology applications. In the presented work, the CNPs are synthesized by using the pulsed arc discharge method between two copper electrodes. The rectifying behaviour of produced CNPs is explored by assuming an Ohmic contact between the CNPs and the electrodes. The synthesized sample is characterized by electrical investigation and modelling. The current-voltage ( I- V) relationship is investigated and bright visible light emission from the produced CNPs was measured. The electroluminescence (EL) intensity was explored by changing the distance between two electrodes. An incremental behaviour on EL by a resistance gradient and distance reduction is identified.

Carbon Nano-particle Synthesized by Pulsed Arc Discharge Method as a Light Emitting Device

NASA Astrophysics Data System (ADS)

Ahmadi, Ramin; Ahmadi, Mohamad Taghi; Ismail, Razali

2018-04-01

Owing to the specific properties such as high mobility, ballistic carrier transport and light emission, carbon nano-particles (CNPs) have been employed in nanotechnology applications. In the presented work, the CNPs are synthesized by using the pulsed arc discharge method between two copper electrodes. The rectifying behaviour of produced CNPs is explored by assuming an Ohmic contact between the CNPs and the electrodes. The synthesized sample is characterized by electrical investigation and modelling. The current-voltage (I-V) relationship is investigated and bright visible light emission from the produced CNPs was measured. The electroluminescence (EL) intensity was explored by changing the distance between two electrodes. An incremental behaviour on EL by a resistance gradient and distance reduction is identified.

Switching power supply

DOEpatents

Mihalka, A.M.

1984-06-05

The invention is a repratable capacitor charging, switching power supply. A ferrite transformer steps up a dc input. The transformer primary is in a full bridge configuration utilizing power MOSFETs as the bridge switches. The transformer secondary is fed into a high voltage, full wave rectifier whose output is connected directly to the energy storage capacitor. The transformer is designed to provide adequate leakage inductance to limit capacitor current. The MOSFETs are switched to the variable frequency from 20 to 50 kHz to charge a capacitor from 0.6 kV. The peak current in a transformer primary and secondary is controlled by increasing the pulse width as the capacitor charges. A digital ripple counter counts pulses and after a preselected desired number is reached an up-counter is clocked.

Experimental study of a self-powered and sensing MR-damper-based vibration control system

NASA Astrophysics Data System (ADS)

Sapiński, Bogdan

2011-10-01

The paper deals with a semi-active vibration control system based on a magnetorheological (MR) damper. The study outlines the model and the structure of the system, and describes its experimental investigation. The conceptual design of this system involves harvesting energy from structural vibrations using an energy extractor based on an electromagnetic transduction mechanism (Faraday's law). The system consists of an electromagnetic induction device (EMI) prototype and an MR damper of RD-1005 series manufactured by Lord Corporation. The energy extracted is applied to control the damping characteristics of the MR damper. The model of the system was used to prove that the proposed vibration control system is feasible. The system was realized in the semi-active control strategy with energy recovery and examined through experiments in the cases where the control coil of the MR damper was voltage-supplied directly from the EMI or voltage-supplied via the rectifier, or supplied with a current control system with two feedback loops. The external loop used the sky-hook algorithm whilst the internal loop used the algorithm switching the photorelay, at the output from the rectifier. Experimental results of the proposed vibration control system were compared with those obtained for the passive system (MR damper is off-state) and for the system with an external power source (conventional system) when the control coil of the MR damper was supplied by a DC power supply and analogue voltage amplifier or a DC power supply and a photorelay. It was demonstrated that the system is able to power-supply the MR damper and can adjust itself to structural vibrations. It was also found that, since the signal of induced voltage from the EMI agrees well with that of the relative velocity signal across the damper, the device can act as a 'velocity-sign' sensor.

Dual-functional on-chip AlGaAs/GaAs Schottky diode for RF power detection and low-power rectenna applications.

PubMed

Hashim, Abdul Manaf; Mustafa, Farahiyah; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul

2011-01-01

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device's good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

PubMed Central

Hashim, Abdul Manaf; Mustafa, Farahiyah; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul

2011-01-01

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I–V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device’s good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems. PMID:22164066

Voltage and pH sensing by the voltage-gated proton channel, HV1.

PubMed

DeCoursey, Thomas E

2018-04-01

Voltage-gated proton channels are unique ion channels, membrane proteins that allow protons but no other ions to cross cell membranes. They are found in diverse species, from unicellular marine life to humans. In all cells, their function requires that they open and conduct current only under certain conditions, typically when the electrochemical gradient for protons is outwards. Consequently, these proteins behave like rectifiers, conducting protons out of cells. Their activity has electrical consequences and also changes the pH on both sides of the membrane. Here we summarize what is known about the way these proteins sense the membrane potential and the pH inside and outside the cell. Currently, it is hypothesized that membrane potential is sensed by permanently charged arginines (with very high p K a ) within the protein, which results in parts of the protein moving to produce a conduction pathway. The mechanism of pH sensing appears to involve titratable side chains of particular amino acids. For this purpose their p K a needs to be within the operational pH range. We propose a 'counter-charge' model for pH sensing in which electrostatic interactions within the protein are selectively disrupted by protonation of internally or externally accessible groups. © 2018 The Author.

Voltage and pH sensing by the voltage-gated proton channel, HV1

PubMed Central

2018-01-01

Voltage-gated proton channels are unique ion channels, membrane proteins that allow protons but no other ions to cross cell membranes. They are found in diverse species, from unicellular marine life to humans. In all cells, their function requires that they open and conduct current only under certain conditions, typically when the electrochemical gradient for protons is outwards. Consequently, these proteins behave like rectifiers, conducting protons out of cells. Their activity has electrical consequences and also changes the pH on both sides of the membrane. Here we summarize what is known about the way these proteins sense the membrane potential and the pH inside and outside the cell. Currently, it is hypothesized that membrane potential is sensed by permanently charged arginines (with very high pKa) within the protein, which results in parts of the protein moving to produce a conduction pathway. The mechanism of pH sensing appears to involve titratable side chains of particular amino acids. For this purpose their pKa needs to be within the operational pH range. We propose a ‘counter-charge’ model for pH sensing in which electrostatic interactions within the protein are selectively disrupted by protonation of internally or externally accessible groups. PMID:29643227

Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices.

PubMed

Gysin, Urs; Glatzel, Thilo; Schmölzer, Thomas; Schöner, Adolf; Reshanov, Sergey; Bartolf, Holger; Meyer, Ernst

2015-01-01

The resolution in electrostatic force microscopy (EFM), a descendant of atomic force microscopy (AFM), has reached nanometre dimensions, necessary to investigate integrated circuits in modern electronic devices. However, the characterization of conducting or semiconducting power devices with EFM methods requires an accurate and reliable technique from the nanometre up to the micrometre scale. For high force sensitivity it is indispensable to operate the microscope under high to ultra-high vacuum (UHV) conditions to suppress viscous damping of the sensor. Furthermore, UHV environment allows for the analysis of clean surfaces under controlled environmental conditions. Because of these requirements we built a large area scanning probe microscope operating under UHV conditions at room temperature allowing to perform various electrical measurements, such as Kelvin probe force microscopy, scanning capacitance force microscopy, scanning spreading resistance microscopy, and also electrostatic force microscopy at higher harmonics. The instrument incorporates beside a standard beam deflection detection system a closed loop scanner with a scan range of 100 μm in lateral and 25 μm in vertical direction as well as an additional fibre optics. This enables the illumination of the tip-sample interface for optically excited measurements such as local surface photo voltage detection. We present Kelvin probe force microscopy (KPFM) measurements before and after sputtering of a copper alloy with chromium grains used as electrical contact surface in ultra-high power switches. In addition, we discuss KPFM measurements on cross sections of cleaved silicon carbide structures: a calibration layer sample and a power rectifier. To demonstrate the benefit of surface photo voltage measurements, we analysed the contact potential difference of a silicon carbide p/n-junction under illumination.

The Design of Operational Amplifier for Low Voltage and Low Current Sound Energy Harvesting System

NASA Astrophysics Data System (ADS)

Fang, Liew Hui; Rahim, Rosemizi Bin Abd; Isa, Muzamir; Idris Syed Hassan, Syed; Ismail, Baharuddin Bin

2018-03-01

The objective of this paper is to design a combination of an operational amplifier (op-amp) with a rectifier used in an alternate current (ac) to direct current (dc) power conversion. The op-amp was designed to specifically work at low voltage and low current for a sound energy harvesting system. The goal of the op-amp design with adjustable gain was to control output voltage based on the objectives of the experiment conducted. The op-amp was designed for minimum power dissipation performance, with the means of increasing the output current when receiving a large amount of load. The harvesting circuits which designed further improved the power output efficiency by shortening the fully charged time needed by a supercapacitor bank. It can fulfil the long-time power demands for low power device. Typically, a small amount of energy sources were converted to electricity and stored in the supercapacitor bank, which was built by 10 pieces of capacitors with 0.22 F each, arranged in parallel connection. The highest capacitance was chosen based on the characteristic that have the longest discharging time to support the applications of a supercapacitor bank. Testing results show that the op-amp can boost the low input ac voltage (∼3.89 V) to high output dc voltage (5.0 V) with output current of 30 mA and stored the electrical energy in a big supercapacitor bank having a total of 2.2 F, effectively. The measured results agree well with the calculated results.

Ion channels in plants.

PubMed

Hedrich, Rainer

2012-10-01

Since the first recordings of single potassium channel activities in the plasma membrane of guard cells more than 25 years ago, patch-clamp studies discovered a variety of ion channels in all cell types and plant species under inspection. Their properties differed in a cell type- and cell membrane-dependent manner. Guard cells, for which the existence of plant potassium channels was initially documented, advanced to a versatile model system for studying plant ion channel structure, function, and physiology. Interestingly, one of the first identified potassium-channel genes encoding the Shaker-type channel KAT1 was shown to be highly expressed in guard cells. KAT1-type channels from Arabidopsis thaliana and its homologs from other species were found to encode the K(+)-selective inward rectifiers that had already been recorded in early patch-clamp studies with guard cells. Within the genome era, additional Arabidopsis Shaker-type channels appeared. All nine members of the Arabidopsis Shaker family are localized at the plasma membrane, where they either operate as inward rectifiers, outward rectifiers, weak voltage-dependent channels, or electrically silent, but modulatory subunits. The vacuole membrane, in contrast, harbors a set of two-pore K(+) channels. Just very recently, two plant anion channel families of the SLAC/SLAH and ALMT/QUAC type were identified. SLAC1/SLAH3 and QUAC1 are expressed in guard cells and mediate Slow- and Rapid-type anion currents, respectively, that are involved in volume and turgor regulation. Anion channels in guard cells and other plant cells are key targets within often complex signaling networks. Here, the present knowledge is reviewed for the plant ion channel biology. Special emphasis is drawn to the molecular mechanisms of channel regulation, in the context of model systems and in the light of evolution.

The impact of nanocontact on nanowire based nanoelectronics.

PubMed

Lin, Yen-Fu; Jian, Wen-Bin

2008-10-01

Nanowire-based nanoelectronic devices will be innovative electronic building blocks from bottom up. The reduced nanocontact area of nanowire devices magnifies the contribution of contact electrical properties. Although a lot of two-contact-based ZnO nanoelectronics have been demonstrated, the electrical properties bringing either from the nanocontacts or from the nanowires have not been considered yet. High quality ZnO nanowires with a small deviation and an average diameter of 38 nm were synthesized to fabricate more than thirty nanowire devices. According to temperature behaviors of current-voltage curves and resistances, the devices could be grouped into three types. Type I devices expose thermally activated transport in ZnO nanowires and they could be considered as two Ohmic nanocontacts of the Ti electrode contacting directly on the nanowire. For those nanowire devices having a high resistance at room temperatures, they can be fitted accurately with the thermionic-emission theory and classified into type II and III devices according to their rectifying and symmetrical current-voltage behaviors. The type II device has only one deteriorated nanocontact and the other one Ohmic contact on single ZnO nanowire. An insulating oxide layer with thickness less than 20 nm should be introduced to describe electron hopping in the nanocontacts, so as to signalize one- and high-dimensional hopping conduction in type II and III devices.

Kir 4.1 inward rectifier potassium channel is upregulated in astrocytes in a murine multiple sclerosis model.

PubMed

Mercado, Francisco; Almanza, Angélica; Rubio, Nazario; Soto, Enrique

2018-06-11

Multiple sclerosis (MS) is a high prevalence degenerative disease characterized at the cellular level by glial and neuronal cell death. The causes of cell death during the disease course are not fully understood. In this work we demonstrate that in a MS model induced by Theiler's murine encephalomyelitis virus (TMEV) infection, the inward rectifier (Kir) 4.1 potassium channel subunit is overexpressed in astrocytes. In voltage clamp experiments the inward current density from TMEV-infected astrocytes was significantly larger than in mock-infected ones. The cRNA hybridization analysis from mock- and TMEV-infected cells showed an upregulation of a potassium transport channel coding sequence. We validated this mRNA increase by RT-PCR and quantitative PCR using Kir 4.1 specific primers. Western blotting experiments confirmed the upregulation of Kir 4.1, and alignment between sequences provided the demonstration that the over-expressed gene encodes for a Kir family member. Flow cytometry showed that the Kir 4.1 protein is located mainly in the cell membrane in mock and TMEV-infected astrocytes. Our results demonstrate an increase in K + inward current in TMEV-infected glial cells, this increment may reduce the neuronal depolarization, contributing to cell resilience mechanisms. Copyright © 2018 Elsevier B.V. All rights reserved.

Proposed Use of Zero Bias Diode Arrays as Thermal Electric Noise Rectifiers and Non-Thermal Energy Harvesters

NASA Astrophysics Data System (ADS)

Valone, Thomas F.

2009-03-01

The well known built-in voltage potential for some select semiconductor p-n junctions and various rectifying devices is proposed to be favorable for generating DC electricity at "zero bias" (with no DC bias voltage applied) in the presence of Johnson noise or 1/f noise which originates from the quantum vacuum (Koch et al., 1982). The 1982 Koch discovery that certain solid state devices exhibit measurable quantum noise has also recently been labeled a finding of dark energy in the lab (Beck and Mackey, 2004). Tunnel diodes are a class of rectifiers that are qualified and some have been credited with conducting only because of quantum fluctuations. Microwave diodes are also good choices since many are designed for zero bias operation. A completely passive, unamplified zero bias diode converter/detector for millimeter (GHz) waves was developed by HRL Labs in 2006 under a DARPA contract, utilizing a Sb-based "backward tunnel diode" (BTD). It is reported to be a "true zero-bias diode." It was developed for a "field radiometer" to "collect thermally radiated power" (in other words, 'night vision'). The diode array mounting allows a feed from horn antenna, which functions as a passive concentrating amplifier. An important clue is the "noise equivalent power" of 1.1 pW per root hertz and the "noise equivalent temperature difference" of 10° K, which indicate sensitivity to Johnson noise (Lynch, et al., 2006). There also have been other inventions such as "single electron transistors" that also have "the highest signal to noise ratio" near zero bias. Furthermore, "ultrasensitive" devices that convert radio frequencies have been invented that operate at outer space temperatures (3 degrees above zero point: 3° K). These devices are tiny nanotech devices which are suitable for assembly in parallel circuits (such as a 2-D array) to possibly produce zero point energy direct current electricity with significant power density (Brenning et al., 2006). Photovoltaic p-n junction cells are also considered for possible higher frequency ZPE transduction. Diode arrays of self-assembled molecular rectifiers or preferably, nano-sized cylindrical diodes are shown to reasonably provide for rectification of electron fluctuations from thermal and non-thermal ZPE sources to create an alternative energy DC electrical generator in the picowatt per diode range.

Enhanced excitability and down-regulated voltage-gated potassium channels in colonic drg neurons from neonatal maternal separation rats.

PubMed

Luo, Jia-Lie; Qin, Hong-Yan; Wong, Chun-Kit; Tsang, Suk-Ying; Huang, Yu; Bian, Zhao-Xiang

2011-05-01

Irritable bowel syndrome (IBS), characterized mainly by abdominal pain, is a functional bowel disorder. The present study aimed to examine changes in the excitability and the activity of the voltage-gated K(+) channel in dorsal root ganglia (DRG) neurons innervating the colon of rats subjected to neonatal maternal separation (NMS). Colonic DRG neurons from NMS rats as identified by FAST DiI™ labeling showed an increased cell size compared with those from nonhandled (NH) rats. Whole cell current-clamp recordings showed that colonic DRG neurons from NMS rats displayed: 1) depolarized resting membrane potential; 2) increased input resistance; 3) a dramatic reduction in rheobase; and 4) a significant increase in the number of action potentials evoked at twice rheobase. Whole cell voltage-clamp recordings revealed that neurons from both groups exhibited transient A-type (I(A)) and delayed rectifier (I(K)) K(+) currents. Compared with NH rat neurons, the averaged density of I(K) was significantly reduced in NMS rat neurons. Furthermore, the Kv1.2 expression was significantly decreased in NMS rat colonic DRG neurons. These results suggest that NMS increases the excitability of colonic DRG neurons mainly by suppressing the I(K) current, which is likely accounted for by the downregulation of the Kv1.2 expression and somal hypertrophy. This study demonstrates the alteration of delayed rectifier K current and Kv1.2 expression in DRG neurons from IBS model rats, representing a molecular mechanism underlying visceral pain and sensitization in IBS, suggesting the potential of Kv1.2 as a therapeutic target for the treatment of IBS. Copyright © 2011 American Pain Society. Published by Elsevier Inc. All rights reserved.

Effects of pioglitazone on cardiac ion currents and action potential morphology in canine ventricular myocytes.

PubMed

Kistamás, Kornél; Szentandrássy, Norbert; Hegyi, Bence; Ruzsnavszky, Ferenc; Váczi, Krisztina; Bárándi, László; Horváth, Balázs; Szebeni, Andrea; Magyar, János; Bányász, Tamás; Kecskeméti, Valéria; Nánási, Péter P

2013-06-15

Despite its widespread therapeutical use there is little information on the cellular cardiac effects of the antidiabetic drug pioglitazone in larger mammals. In the present study, therefore, the concentration-dependent effects of pioglitazone on ion currents and action potential configuration were studied in isolated canine ventricular myocytes using standard microelectrode, conventional whole cell patch clamp, and action potential voltage clamp techniques. Pioglitazone decreased the maximum velocity of depolarization and the amplitude of phase-1 repolarization at concentrations ≥3 μM. Action potentials were shortened by pioglitazone at concentrations ≥10 μM, which effect was accompanied with significant reduction of beat-to-beat variability of action potential duration. Several transmembrane ion currents, including the transient outward K(+) current (Ito), the L-type Ca(2+) current (ICa), the rapid and slow components of the delayed rectifier K(+) current (IKr and IKs, respectively), and the inward rectifier K(+) current (IK1) were inhibited by pioglitazone under conventional voltage clamp conditions. Ito was blocked significantly at concentrations ≥3 μM, ICa, IKr, IKs at concentrations ≥10 μM, while IK1 at concentrations ≥30 μM. Suppression of Ito, ICa, IKr, and IK1 has been confirmed also under action potential voltage clamp conditions. ATP-sensitive K(+) current, when activated by lemakalim, was effectively blocked by pioglitazone. Accordingly, action potentials were prolonged by 10 μM pioglitazone when the drug was applied in the presence of lemakalim. All these effects developed rapidly and were readily reversible upon washout. In conclusion, pioglitazone seems to be a harmless agent at usual therapeutic concentrations. Copyright © 2013 Elsevier B.V. All rights reserved.

Semiconductor-Insulator-Semiconductor Diode Consisting of Monolayer MoS2, h-BN, and GaN Heterostructure.

PubMed

Jeong, Hyun; Bang, Seungho; Oh, Hye Min; Jeong, Hyeon Jun; An, Sung-Jin; Han, Gang Hee; Kim, Hyun; Kim, Ki Kang; Park, Jin Cheol; Lee, Young Hee; Lerondel, Gilles; Jeong, Mun Seok

2015-10-27

We propose a semiconductor-insulator-semiconductor (SIS) heterojunction diode consisting of monolayer (1-L) MoS2, hexagonal boron nitride (h-BN), and epitaxial p-GaN that can be applied to high-performance nanoscale optoelectronics. The layered materials of 1-L MoS2 and h-BN, grown by chemical vapor deposition, were vertically stacked by a wet-transfer method on a p-GaN layer. The final structure was verified by confocal photoluminescence and Raman spectroscopy. Current-voltage (I-V) measurements were conducted to compare the device performance with that of a more classical p-n structure. In both structures (the p-n and SIS heterojunction diode), clear current-rectifying characteristics were observed. In particular, a current and threshold voltage were obtained for the SIS structure that was higher compared to that of the p-n structure. This indicated that tunneling is the predominant carrier transport mechanism. In addition, the photoresponse of the SIS structure induced by the illumination of visible light was observed by photocurrent measurements.

The Distributions of Voltage-Gated K+ current Subtypes in Different Cell Sizes from Adult Mouse Dorsal Root Ganglia.

PubMed

Sheng, Anqi; Hong, Jiangru; Zhang, Lulu; Zhang, Yan; Zhang, Guangqin

2018-03-29

Voltage-gated K + (K V ) currents play a crucial role in regulating pain by controlling neuronal excitability, and are divided into transient A-type currents (I A ) and delayed rectifier currents (I K ). The dorsal root ganglion (DRG) neurons are heterogeneous and the subtypes of K V currents display different levels in distinct cell sizes. To observe correlations of the subtypes of K V currents with DRG cell sizes, K V currents were recorded by whole-cell patch clamp in freshly isolated mouse DRG neurons. Results showed that I A occupied a high proportion in K V currents in medium- and large-diameter DRG neurons, whereas I K possessed a larger proportion of K V currents in small-diameter DRG neurons. A lower correlation was found between the proportion of I A or I K in K V currents and cell sizes. These data suggest that I A channels are mainly expressed in medium and large cells and I K channels are predominantly expressed in small cells.

Electrophysiological effects of calcitonin gene-related peptide in bull-frog and guinea-pig atrial myocytes.

PubMed Central

Ono, K; Giles, W R

1991-01-01

1. Electrophysiological effects of calcitonin gene-related peptide (CGRP) on action potentials and corresponding transmembrane currents in single myocytes from bull-frog and guinea-pig atria were studied using a whole-cell voltage-clamp method. 2. CGRP at relatively low concentrations increased the height of the action potential plateau in a dose-dependent manner in both bull-frog and guinea-pig myocytes. In addition, in bull-frog cells CGRP accelerated the early phase of repolarization, thus shortening the overall duration of the action potential. In contrast, in guinea-pig myocytes CGRP prolonged the action potential duration at all concentrations that were studied. 3. Voltage-clamp measurements demonstrated that CGRP increased transmembrane calcium current (ICa) in guinea-pig myocytes without a significant change in its voltage dependence. The ED50 value for this effect on ICa was 1.28 +/- 0.55 X 10(-8) M (n = 4). The time course of the inactivation of ICa was not affected by CGRP. 4. CGRP increased the delayed rectifier K+ current (IK) at relatively low concentrations in bull-frog atria, whereas relatively high concentrations were needed to increase IK in guinea-pig myocytes. This effect was observed even after complete inhibition of ICa. 5. CGRP had no significant effect on the inwardly rectifying background K+ current, IK1, even at very high concentrations. 6. Comparison of the time course of ICa augmentation in bull-frog and guinea-pig myocytes revealed an important difference in the effect of CGRP in these two types of cells. CGRP at maximal concentrations increased ICa transiently in bull-frog myocytes, whereas this response was sustained in guinea-pig myocytes. Isoprenaline (Iso) induced sustained increase in ICa in both species. When ICa was fully activated by Iso, CGRP at high concentrations strongly inhibited ICa in the bull-frog, whereas it had little effect on ICa in guinea-pig myocytes. 7. Intracellular application of GTP gamma S (guanosine 5'-O-(3-thiotriphosphate) 10(-4) M) greatly potentiated the CGRP effect on ICa; in contrast, GDP beta S (guanosine 5'-O-(2-thiodiphosphate), 2 x 10(-3) M) partially inhibited the CGRP-induced augmentation of ICa. Taken together, these results indicate that the stimulation of ICa by CGRP is mediated by a GTP-binding protein. 8. The observed dose-dependent changes in ICa and IK in bull-frog and guinea-pig myocytes can explain the different patterns of CGRP-induced changes in action potential shape in these two myocyte preparations. PMID:1905755

Effects of gold diffusion on n-type doping of GaAs nanowires.

PubMed

Tambe, Michael J; Ren, Shenqiang; Gradecak, Silvija

2010-11-10

The deposition of n-GaAs shells is explored as a method of n-type doping in GaAs nanowires grown by the Au-mediated metal-organic chemical vapor deposition. Core-shell GaAs/n-GaAs nanowires exhibit an unintended rectifying behavior that is attributed to the Au diffusion during the shell deposition based on studies using energy dispersive X-ray spectroscopy, current-voltage, capacitance-voltage, and Kelvin probe force measurements. Removing the gold prior to n-type shell deposition results in the realization of n-type GaAs nanowires without rectification. We directly correlate the presence of gold impurities to nanowire electrical properties and provide an insight into the role of seed particles on the properties of nanowires and nanowire heterostructures.

Fabrication and electrical properties of p-CuAlO2/(n-, p-)Si heterojunctions

NASA Astrophysics Data System (ADS)

Suzhen, Wu; Zanhong, Deng; Weiwei, Dong; Jingzhen, Shao; Xiaodong, Fang

2014-04-01

CuAlO2 thin films have been prepared by the chemical solution deposition method on both n-Si and p-Si substrates. X-ray diffraction analysis indicates that the obtained CuAlO2 films have a single delafossite structure. The current transport properties of the resultant p-CuAlO2/n-Si and p-CuAlO2/p-Si heterojunctions are investigated by current-voltage measurements. The p-CuAlO2/n-Si has a rectifying ratio of ~35 within the applied voltages of -3.0 to +3.0 V, while the p-CuAlO2/p-Si shows Schottky diode-like characteristics, dominated in forward bias by the flow of space-charge-limited current.

ULTRA-STABILIZED D. C. AMPLIFIER

DOEpatents

Hartwig, E.C.; Kuenning, R.W.; Acker, R.C.

1959-02-17

An improved circuit is described for stabilizing the drift and minimizing the noise and hum level of d-c amplifiers so that the output voltage will be zero when the input is zero. In its detailed aspects, the disclosed circuit incorporates a d-c amplifier having a signal input, a second input, and an output circuit coupled back to the first input of the amplifier through inverse feedback means. An electronically driven chopper having a pair of fixed contacts and a moveable contact alternately connects the two inputs of a difference amplifier to the signal input. The A. E. error signal produced in the difference amplifier is amplified, rectified, and applied to the second input of the amplifier as the d-c stabilizing voltage.

Reverse matrix converter control method for PMSM drives using DPC

NASA Astrophysics Data System (ADS)

Bak, Yeongsu; Lee, Kyo-Beum

2018-05-01

This paper proposes a control method for a reverse matrix converter (RMC) that drives a three-phase permanent magnet synchronous motor (PMSM). In this proposed method, direct power control (DPC) is used to control the voltage source rectifier of the RMC. The RMC is an indirect matrix converter operating in the boost mode, in which the power-flow directions of the input and output are switched. It has a minimum voltage transfer ratio of 1/0.866 in a linear-modulation region. In this paper, a control method that uses DPC as an additional control method is proposed in order to control the RMC driving a PMSM in the output stage. Simulations and experimental results verify the effectiveness of the proposed control method.

Precision rectifier detectors for ac resistance bridge measurements with application to temperature control systems for irradiation creep experiments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duncan, M. G.

The suitability of several temperature measurement schemes for an irradiation creep experiment is examined. It is found that the specimen resistance can be used to measure and control the sample temperature if compensated for resistance drift due to radiation and annealing effects. A modified Kelvin bridge is presented that allows compensation for resistance drift by periodically checking the sample resistance at a controlled ambient temperature. A new phase-insensitive method for detecting the bridge error signals is presented. The phase-insensitive detector is formed by averaging the magnitude of two bridge voltages. Although this method is substantially less sensitive to stray reactancesmore » in the bridge than conventional phase-sensitive detectors, it is sensitive to gain stability and linearity of the rectifier circuits. Accuracy limitations of rectifier circuits are examined both theoretically and experimentally in great detail. Both hand analyses and computer simulations of rectifier errors are presented. Finally, the design of a temperature control system based on sample resistance measurement is presented. The prototype is shown to control a 316 stainless steel sample to within a 0.15/sup 0/C short term (10 sec) and a 0.03/sup 0/C long term (10 min) standard deviation at temperatures between 150 and 700/sup 0/C. The phase-insensitive detector typically contributes less than 10 ppM peak resistance measurement error (0.04/sup 0/C at 700/sup 0/C for 316 stainless steel or 0.005/sup 0/C at 150/sup 0/C for zirconium).« less

Delayed rectifier and A-type potassium channels associated with Kv 2.1 and Kv 4.3 expression in embryonic rat neural progenitor cells.

PubMed

Smith, Dean O; Rosenheimer, Julie L; Kalil, Ronald E

2008-02-13

Because of the importance of voltage-activated K(+) channels during embryonic development and in cell proliferation, we present here the first description of these channels in E15 rat embryonic neural progenitor cells derived from the subventricular zone (SVZ). Activation, inactivation, and single-channel conductance properties of recorded progenitor cells were compared with those obtained by others when these Kv gene products were expressed in oocytes. Neural progenitor cells derived from the subventricular zone of E15 embryonic rats were cultured under conditions that did not promote differentiation. Immunocytochemical and Western blot assays for nestin expression indicated that almost all of the cells available for recording expressed this intermediate filament protein, which is generally accepted as a marker for uncommitted embryonic neural progenitor cells. However, a very small numbers of the cells expressed GFAP, a marker for astrocytes, O4, a marker for immature oligodendrocytes, and betaIII-tubulin, a marker for neurons. Using immunocytochemistry and Western blots, we detected consistently the expression of Kv2.1, and 4.3. In whole-cell mode, we recorded two outward currents, a delayed rectifier and an A-type current. We conclude that Kv2.1, and 4.3 are expressed in E15 SVZ neural progenitor cells, and we propose that they may be associated with the delayed-rectifier and the A-type currents, respectively, that we recorded. These results demonstrate the early expression of delayed rectifier and A-type K(+) currents and channels in embryonic neural progenitor cells prior to the differentiation of these cells.

Selective suppression of the slow-inactivating potassium currents by nootropics in molluscan neurons.

PubMed

Bukanova, Julia V; Solntseva, Elena I; Skrebitsky, Vladimir G

2002-09-01

The role of the voltage-gated K+ channels in the effect of some nootropics was investigated. Earlier, the multiple effect of high concentrations of two nootropics, piracetam and its peptide analogue GVS-111 [Seredenin et al. (1995), US Patent No. 5,439,930], on Ca2+ and K+ currents of molluscan neurons was shown [Solntseva et al. (1997), General Pharmacology 29, 85-89]. In the present work, we describe the selective effect of low concentrations of these nootropics as well as vinpocetine on certain types of K+ current. The experiments were performed on isolated neurons of the land snail Helix pomatia using a two-microelectrode voltage-clamp method. The inward voltage-gated Ca2+ current (ICa) and three subtypes of the outward voltage-gated K+ current were recorded: Ca2+-dependent K+ current (IK(Ca)), delayed rectifying current (IKD), and fast-inactivating K+ current (IA). It has been found that I Ca was not changed in the presence of 30 microM vinpocetine, 100 microM piracetam or 10 nM GVS-111, while slow-inactivating, TEA-sensitive IK(Ca) and IKD were inhibited (IK(Ca) more strongly than IKD). In contrast, the fast-inactivating, 4-AP-sensitive K+ current (IA) was not diminished by low concentrations of piracetam and GVS-111, while vinpocetine even augmented it. A possible role of slow-inactivating subtypes of the K+ channels in the development of different forms of dementia is discussed.

Inward rectifier potassium current IKir promotes intrinsic pacemaker activity of thalamocortical neurons.

PubMed

Amarillo, Yimy; Tissone, Angela I; Mato, Germán; Nadal, Marcela S

2018-06-01

Slow repetitive burst firing by hyperpolarized thalamocortical (TC) neurons correlates with global slow rhythms (<4 Hz), which are the physiological oscillations during non-rapid eye movement sleep or pathological oscillations during idiopathic epilepsy. The pacemaker activity of TC neurons depends on the expression of several subthreshold conductances, which are modulated in a behaviorally dependent manner. Here we show that upregulation of the small and neglected inward rectifier potassium current I Kir induces repetitive burst firing at slow and delta frequency bands. We demonstrate this in mouse TC neurons in brain slices by manipulating the Kir maximum conductance with dynamic clamp. We also performed a thorough theoretical analysis that explains how the unique properties of I Kir enable this current to induce slow periodic bursting in TC neurons. We describe a new ionic mechanism based on the voltage- and time-dependent interaction of I Kir and hyperpolarization-activated cationic current I h that endows TC neurons with the ability to oscillate spontaneously at very low frequencies, even below 0.5 Hz. Bifurcation analysis of conductance-based models of increasing complexity demonstrates that I Kir induces bistability of the membrane potential at the same time that it induces sustained oscillations in combination with I h and increases the robustness of low threshold-activated calcium current I T -mediated oscillations. NEW & NOTEWORTHY The strong inwardly rectifying potassium current I Kir of thalamocortical neurons displays a region of negative slope conductance in the current-voltage relationship that generates potassium currents activated by hyperpolarization. Bifurcation analysis shows that I Kir induces bistability of the membrane potential; generates sustained subthreshold oscillations by interacting with the hyperpolarization-activated cationic current I h ; and increases the robustness of oscillations mediated by the low threshold-activated calcium current I T . Upregulation of I Kir in thalamocortical neurons induces repetitive burst firing at slow and delta frequency bands (<4 Hz).

The Potassium Channel, Kir3.4 Participates in Angiotensin II-Stimulated Aldosterone Production by a Human Adrenocortical Cell Line

PubMed Central

Oki, Kenji; Plonczynski, Maria W.; Lam, Milay Luis; Gomez-Sanchez, Elise P.

2012-01-01

Angiotensin II (A-II) regulation of aldosterone secretion is initiated by inducing cell membrane depolarization, thereby increasing intracellular calcium and activating the calcium calmodulin/calmodulin kinase cascade. Mutations in the selectivity filter of the KCNJ5 gene coding for inward rectifying potassium channel (Kir)3.4 has been found in about one third of aldosterone-producing adenomas. These mutations result in loss of selectivity of the inward rectifying current for potassium, which causes membrane depolarization and opening of calcium channels and activation of the calcium calmodulin/calmodulin kinase cascade and results in an increase in aldosterone secretion. In this study we show that A-II and a calcium ionophore down-regulate the expression of KCNJ5 mRNA and protein. Activation of Kir3.4 by naringin inhibits A-II-stimulated membrane voltage and aldosterone secretion. Overexpression of KCNJ5 in the HAC15 cells using a lentivirus resulted in a decrease in membrane voltage, intracellular calcium, expression of steroidogenic acute regulatory protein, 3-β-hydroxysteroid dehydrogenase 3B2, cytochrome P450 11B1 and cytochrome P450 11B2 mRNA, and aldosterone synthesis. In conclusion, A-II appears to stimulate aldosterone secretion by depolarizing the membrane acting in part through the regulation of the expression and activity of Kir3.4. PMID:22798349

Permittivity and temperature effects on rectification performance of self-switching diodes with different geometrical structures using two-dimensional device simulator

NASA Astrophysics Data System (ADS)

Zakaria, N. F.; Kasjoo, S. R.; Zailan, Z.; Isa, M. M.; Taking, S.; Arshad, M. K. M.

2017-12-01

Characterization on an InGaAs-based self-switching diode (SSD) using technology computer aided design (TCAD) aimed for optimizing the electrical rectification performance of the device is reported. The rectifying performance is mainly contributed by a parameter known as the curvature coefficient which is derived from the current-voltage (I-V) behavior of the device. As such, the curvature coefficient of SSD was analyzed in this work, not only by varying the device's geometrical structure, but also by implementing different dielectric relative permittivity of the device's trenches, ranging from 1.0 to 10. Furthermore, the simulations were performed under temperature range of 300-600 K. The results showed that increased temperature degraded the SSD's rectifying performance due to increased reverse current which can deteriorate the nonlinearity of the device's I-V characteristic. Moreover, an improved curvature coefficient can be achieved using silicon dioxide (∼3.9) as the SSD trenches. The cut-off frequency of SSD with zero-bias curvature coefficient of ∼30 V-1 attained in this work was approximately 80 GHz, operating at unbiased condition. The results obtained can assist the design of SSD to efficiently operate as rectifiers at microwave and terahertz frequencies.

Role of an inward rectifier K+ current and of hyperpolarization in human myoblast fusion

PubMed Central

Liu, J-H; Bijlenga, P; Fischer-Lougheed, J; Occhiodoro, T; Kaelin, A; Bader, C R; Bernheim, L

1998-01-01

The role of K+ channels and membrane potential in myoblast fusion was evaluated by examining resting membrane potential and timing of expression of K+ currents at three stages of differentiation of human myogenic cells: undifferentiated myoblasts, fusion-competent myoblasts (FCMBs), and freshly formed myotubes. Two K+ currents contribute to a hyperpolarization of myoblasts prior to fusion: IK(NI), a non-inactivating delayed rectifier, and IK(IR), an inward rectifier. IK(NI) density is low in undifferentiated myoblasts, increases in FCMBs and declines in myotubes. On the other hand, IK(IR) is expressed in 28 % of the FCMBs and in all myotubes. IK(IR) is reversibly blocked by Ba2+ or Cs+. Cells expressing IK(IR) have resting membrane potentials of −65 mV. A block by Ba2+ or Cs+ induces a depolarization to a voltage determined by IK(NI) (−32 mV). Cs+ and Ba2+ ions reduce myoblast fusion. It is hypothesized that the IK(IR)-mediated hyperpolarization allows FCMBs to recruit Na+, K+ and T-type Ca2+ channels which are present in these cells and would otherwise be inactivated. FCMBs, rendered thereby capable of firing action potentials, could amplify depolarizing signals and may accelerate fusion. PMID:9705997

Toward a fully integrated neurostimulator with inductive power recovery front-end.

PubMed

Mounaïm, Fayçal; Sawan, Mohamad

2012-08-01

In order to investigate new neurostimulation strategies for micturition recovery in spinal cord injured patients, custom implantable stimulators are required to carry-on chronic animal experiments. However, higher integration of the neurostimulator becomes increasingly necessary for miniaturization purposes, power consumption reduction, and for increasing the number of stimulation channels. As a first step towards total integration, we present in this paper the design of a highly-integrated neurostimulator that can be assembled on a 21-mm diameter printed circuit board. The prototype is based on three custom integrated circuits fabricated in High-Voltage (HV) CMOS technology, and a low-power small-scale commercially available FPGA. Using a step-down approach where the inductive voltage is left free up to 20 V, the inductive power and data recovery front-end is fully integrated. In particular, the front-end includes a bridge rectifier, a 20-V voltage limiter, an adjustable series regulator (5 to 12 V), a switched-capacitor step-down DC/DC converter (1:3, 1:2, or 2:3 ratio), as well as data recovery. Measurements show that the DC/DC converter achieves more than 86% power efficiency while providing around 3.9-V from a 12-V input at 1-mA load, 1:3 conversion ratio, and 50-kHz switching frequency. With such efficiency, the proposed step-down inductive power recovery topology is more advantageous than its conventional step-up counterpart. Experimental results confirm good overall functionality of the system.

Experimental pathways to understand and avoid high-Z impurity contamination from ICRF heating in tokamaks

NASA Astrophysics Data System (ADS)

Reinke, Matthew

2016-10-01

Recent results from Alcator C-Mod and JET demonstrate progress in understanding and mitigating core high-Z impurity contamination linked to ICRF heating in tokamaks with high-Z PFCs. Theory has identified two likely mechanisms: impurity sources due to sputtering enhanced by RF-rectified sheaths and greater cross-field SOL transport due to ExB convective cells. New experiments on Alcator C-Mod and JET demonstrate convective cell transport is likely a sub-dominant effect, despite directly observing ExB flows from rectified RF fields on C-Mod. Trace N2 introduced in the far SOL on field lines connected to and well away from an active ICRF antenna result in similar levels of core nitrogen, indicating local RF-driven transport is weak. This suggests the core high-Z density, nZ,core, is determined by sheath-induced sputtering and RF-independent SOL transport, allowing further reductions through antenna design. ICRF heating on C-Mod uses a unique, field aligned (FAA) and a pair of conventional, toroidally aligned (TAA) antennas. The FAA is designed to reduce rectified voltages relative to the TAA, and the impact of sheath-induced sputtering is explored by observing nZ,core while varying the TAA/FAA heating mix. A reduction of approximately 50% in core high-Z content is seen in L-modes when using the FAA and high-Z sources at the antenna limiter are effectively eliminated, indicating the remaining RF-driven source is away from the limiter. A drop in nZ,core may also be realized by locating the RF antenna on the inboard side where SOL transport aids impurity screening. New C-Mod experiments demonstrate up to a factor of 5 reduction in core nitrogen when N2 is injected on the high-field side as compared to low-field side impurity fueling. Varying the magnetic topology helps to elucidate the SOL transport physics responsible, laying a physics basis for inboard RF antenna placement. This work is supported by U.S. DOE Award DE-FC02-99ER54512, using Alcator C-Mod and carried out within the framework of the EUROfusion Consortium and has received funding from Euratom under Grant Agreement No 633053.

Border Collision of Three-Phase Voltage-Source Inverter System with Interacting Loads

NASA Astrophysics Data System (ADS)

Li, Zhen; Liu, Bin; Li, Yining; Wong, Siu-Chung; Liu, Xiangdong; Huang, Yuehui

As a commercial interface, three-phase voltage-source inverters (VSI) are commonly equipped for energy conversion to export DC power from most distributed generation (DG) to the AC utility. Not only do voltage-source converters take charge of converting the power to the loads but support the grid voltage at the point of common connection (PCC) as well, which is dependent on the condition of the grid-connected loads. This paper explores the border collision and its interacting mechanism among the VSI, resistive interacting loads and grids, which manifests as the alternating emergence of the inverting and rectifying operations, where the normal operation is terminated and a new one is assumed. Their mutual effect on the power quality under investigation will cause the circuital stability issue and further deteriorate the voltage regulation capability of VSI by dramatically raising the grid voltage harmonics. It is found in a design-oriented view that the border collision operation will be induced within the unsuitable parameter space with respect to transmission lines of AC grid, resistive loads and internal resistance of VSI. The physical phenomenon is also identified by the theoretical analysis. With numerical simulations for various circuit conditions, the corresponding bifurcation boundaries are collected, where the stability of the system is lost via border collision.

A robust low quiescent current power receiver for inductive power transmission in bio implants

NASA Astrophysics Data System (ADS)

Helalian, Hamid; Pasandi, Ghasem; Jafarabadi Ashtiani, Shahin

2017-05-01

In this paper, a robust low quiescent current complementary metal-oxide semiconductor (CMOS) power receiver for wireless power transmission is presented. This power receiver consists of three main parts including rectifier, switch capacitor DC-DC converter and low-dropout regulator (LDO) without output capacitor. The switch capacitor DC-DC converter has variable conversion ratios and synchronous controller that lets the DC-DC converter to switch among five different conversion ratios to prevent output voltage drop and LDO regulator efficiency reduction. For all ranges of output current (0-10 mA), the voltage regulator is compensated and is stable. Voltage regulator stabilisation does not need the off-chip capacitor. In addition, a novel adaptive biasing frequency compensation method for low dropout voltage regulator is proposed in this paper. This method provides essential minimum current for compensation and reduces the quiescent current more effectively. The power receiver was designed in a 180-nm industrial CMOS technology, and the voltage range of the input is from 0.8 to 2 V, while the voltage range of the output is from 1.2 to 1.75 V, with a maximum load current of 10 mA, the unregulated efficiency of 79.2%, and the regulated efficiency of 64.4%.

Recovery Act: High-Efficiency, Wideband Three-Phase Rectifiers and Adaptive Rectifier Management for Telecomm Central Office and Large Data Center Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mark A. Johnson

2012-06-29

Lineage Power and Verizon teamed up to address a DOE funding opportunity focused on improving the power conversion chain in telecommunications facilities and data centers. The project had three significant elements: the design and development of high efficiency and high power three-phase rectifiers by Lineage Power, design and development of software to optimize overall plant energy efficiency by Lineage Power, and a field trial in active Verizon telecommunications facilities where energy consumption was measured before and after efficiency upgrades.

Reduction of I(Ca,L) and I(to1) density in hypertrophied right ventricular cells by simulated high altitude in adult rats.

PubMed

Chouabe, C; Espinosa, L; Megas, P; Chakir, A; Rougier, O; Freminet, A; Bonvallet, R

1997-01-01

The present paper describes the effect of a simulated hypobaric condition (at the altitude of 4500 m) on morphological characteristics and on some ionic currents in ventricular cells of adult rats. According to current data, chronic high-altitude exposure led to mild right ventricular hypertrophy. Increase in right ventricular weight appeared to be due wholly or partly to an enlargement of myocytes. The whole-cell patch-clamp technique was used and this confirmed, by cell capacitance measurement, that chronic high-altitude exposure induced an increase in the size of the right ventricular cells. Hypertrophied cells showed prolongation of action potential (AP). Four ionic currents, playing a role along with many others in the precise balance of inward and outward currents that control the duration of cardiac AP, were investigated. We report a significant decrease in the transient outward (I(to1)) and in the L-type calcium current (I(Ca,L)) densities while there was no significant difference in the delayed rectifier current (I(K)) or in the inward rectifier current (I(K1)) densities in hypertrophied right ventricular cells compared to control cells. At a given potential the decrease in I(to 1) density was relatively more important than the decrease in I(Ca,L) density. In both cell types, all the currents displayed the same voltage dependence. The inactivation kinetics of I(to 1) and I(Ca,L) or the steady-state activation and inactivation relationships were not significantly modified by chronic high-altitude exposure. We conclude that chronic high-altitude exposure induced true right ventricular myocyte hypertrophy and that the decrease in I(to 1) density might account for the lengthened action potential, or have a partial effect.

Single Phase Passive Rectification Versus Active Rectification Applied to High Power Stirling Engines

NASA Technical Reports Server (NTRS)

Santiago, Walter; Birchenough, Arthur G.

2006-01-01

Stirling engine converters are being considered as potential candidates for high power energy conversion systems required by future NASA explorations missions. These types of engines typically contain two major moving parts, the displacer and the piston, in which a linear alternator is attached to the piston to produce a single phase sinusoidal waveform at a specific electric frequency. Since all Stirling engines perform at low electrical frequencies (less or equal to 100 Hz), space explorations missions that will employ these engines will be required to use DC power management and distribution (PMAD) system instead of an AC PMAD system to save on space and weight. Therefore, to supply such DC power an AC to DC converter is connected to the Stirling engine. There are two types of AC to DC converters that can be employed, a passive full bridge diode rectifier and an active switching full bridge rectifier. Due to the inherent line inductance of the Stirling Engine-Linear Alternator (SE-LA), their sinusoidal voltage and current will be phase shifted producing a power factor below 1. In order to keep power the factor close to unity, both AC to DC converters topologies will implement power factor correction. This paper discusses these power factor correction methods as well as their impact on overall mass for exploration applications. Simulation results on both AC to DC converters topologies with power factor correction as a function of output power and SE-LA line inductance impedance are presented and compared.

Performance of unified power quality conditioner (UPQC) based on fuzzy controller for attenuating of voltage and current harmonics

NASA Astrophysics Data System (ADS)

Milood Almelian, Mohamad; Mohd, Izzeldin I.; Asghaiyer Omran, Mohamed; Ullah Sheikh, Usman

2018-04-01

Power quality-related issues such as current and voltage distortions can adversely affect home and industrial appliances. Although several conventional techniques such as the use of passive and active filters have been developed to increase power quality standards, these methods have challenges and are inadequate due to the increasing number of applications. The Unified Power Quality Conditioner (UPQC) is a modern strategy towards correcting the imperfections of voltage and load current supply. A UPQC is a combination of both series and shunt active power filters in a back-to-back manner with a common DC link capacitor. The control of the voltage of the DC link capacitor is important in achieving a desired UPQC performance. In this paper, the UPQC with a Fuzzy logic controller (FLC) was used to precisely eliminate the imperfections of voltage and current harmonics. The results of the simulation studies using MATLAB/Simulink and Simpower system programming for R-L load associated through an uncontrolled bridge rectifier was used to assess the execution process. The UPQC with FLC was simulated for a system with distorted load current and a system with distorted source voltage and load current. The outcome of the comparison of %THD in the load current and source voltage before and after using UPQC for the two cases was presented.

Graphene Double-Layer Capacitor with ac Line-Filtering Performance

NASA Astrophysics Data System (ADS)

Miller, John R.; Outlaw, R. A.; Holloway, B. C.

2010-09-01

Electric double-layer capacitors (DLCs) can have high storage capacity, but their porous electrodes cause them to perform like resistors in filter circuits that remove ripple from rectified direct current. We have demonstrated efficient filtering of 120-hertz current with DLCs with electrodes made from vertically oriented graphene nanosheets grown directly on metal current collectors. This design minimized electronic and ionic resistances and produced capacitors with RC time constants of less than 200 microseconds, in contrast with ~1 second for typical DLCs. Graphene nanosheets have a preponderance of exposed edge planes that greatly increases charge storage as compared with that of designs that rely on basal plane surfaces. Capacitors constructed with these electrodes could be smaller than the low-voltage aluminum electrolyte capacitors that are typically used in electronic devices.

Graphene double-layer capacitor with ac line-filtering performance.

PubMed

Miller, John R; Outlaw, R A; Holloway, B C

2010-09-24

Electric double-layer capacitors (DLCs) can have high storage capacity, but their porous electrodes cause them to perform like resistors in filter circuits that remove ripple from rectified direct current. We have demonstrated efficient filtering of 120-hertz current with DLCs with electrodes made from vertically oriented graphene nanosheets grown directly on metal current collectors. This design minimized electronic and ionic resistances and produced capacitors with RC time constants of less than 200 microseconds, in contrast with ~1 second for typical DLCs. Graphene nanosheets have a preponderance of exposed edge planes that greatly increases charge storage as compared with that of designs that rely on basal plane surfaces. Capacitors constructed with these electrodes could be smaller than the low-voltage aluminum electrolyte capacitors that are typically used in electronic devices.

Near room temperature and large-area synthesis of ZnO/Cu2O heterojunction for photocatalytic properties

NASA Astrophysics Data System (ADS)

Gao, Shiyong; Zhang, Jiejing; Li, Wenqiang; Jiao, Shujie; Nie, Yanguang; Fan, Huaiyun; Zeng, Zhi; Yu, Qingjiang; Wang, Jinzhong; Zhang, Xitian

2018-01-01

Large-area ZnO/Cu2O heterojunction have been successfully synthesized on Cu foil through a simple two-step solution method at near room temperature. The field emission scanning electron microscopy characterization indicates that the morphology of as-prepared Cu2O film grown on Cu foil is octahedral structure with diameter of ∼450 nm and ZnO is nanorod arrays structure with diameter of ∼150 nm. The current-voltage measurement of ZnO/Cu2O heterojunction shows a typical rectifying characteristics. Moreover, the photocatalytic test indicates that ZnO/Cu2O heterojunction exhibits high photocatalytic efficient for degradation of congo red dyes. The possible photocatalytic mechanism of ZnO/Cu2O heterojunction is also presented.

Controlling Arc Length in Plasma Welding

NASA Technical Reports Server (NTRS)

Iceland, W. F.

1986-01-01

Circuit maintains arc length on irregularly shaped workpieces. Length of plasma arc continuously adjusted by control circuit to maintain commanded value. After pilot arc is established, contactor closed and transfers arc to workpiece. Control circuit then half-wave rectifies ac arc voltage to produce dc control signal proportional to arc length. Circuit added to plasma arc welding machines with few wiring changes. Welds made with circuit cleaner and require less rework than welds made without it. Beads smooth and free of inclusions.

Low Temperature Operation of a Switching Power Converter

NASA Technical Reports Server (NTRS)

Anglada-Sanchez, Carlos R.; Perez-Feliciano, David; Ray, Biswajit

1997-01-01

The low temperature operation of a 48 W, 50 kHz, 36/12 V pulse width modulated (PWM) buck de-de power converter designed with standard commercially available components and devices is reported. The efficiency of the converter increased from 85.6% at room temperature (300 K) to 92.0% at liquid nitrogen temperature (77 K). The variation of power MOSFET, diode rectifier, and output filter inductor loss with temperature is discussed. Relevant current, voltage. and power waveforms are also included.

Pinhole mediated electrical transport across LaTiO3/SrTiO3 and LaAlO3/SrTiO3 oxide hetero-structures

NASA Astrophysics Data System (ADS)

Kumar, Pramod; Dogra, Anjana; Toutam, Vijaykumar

2013-11-01

Metal-insulator-metal configuration of LaTiO3/SrTiO3 and LaAlO3/SrTiO3 hetero-structures between two dimensional electron gas formed at the interface and different area top electrodes is employed for Conductive Atomic force microscopy (CAFM) imaging, Current-Voltage (I-V), and Capacitance-Voltage (C-V) spectroscopy. Electrode area dependent I-V characteristics are observed for these oxide hetero-structures. With small area electrodes, rectifying I-V characteristics are observed, compared to, both tunneling and leakage current characteristics for large area electrodes. CAFM mapping confirmed the presence of pinholes on both surfaces. Resultant I-V characteristics have a contribution from both tunneling and leakage due to pinholes.

Adaptive Modulation for DFIG and STATCOM With High-Voltage Direct Current Transmission.

PubMed

Tang, Yufei; He, Haibo; Ni, Zhen; Wen, Jinyu; Huang, Tingwen

2016-08-01

This paper develops an adaptive modulation approach for power system control based on the approximate/adaptive dynamic programming method, namely, the goal representation heuristic dynamic programming (GrHDP). In particular, we focus on the fault recovery problem of a doubly fed induction generator (DFIG)-based wind farm and a static synchronous compensator (STATCOM) with high-voltage direct current (HVDC) transmission. In this design, the online GrHDP-based controller provides three adaptive supplementary control signals to the DFIG controller, STATCOM controller, and HVDC rectifier controller, respectively. The mechanism is to observe the system states and their derivatives and then provides supplementary control to the plant according to the utility function. With the GrHDP design, the controller can adaptively develop an internal goal representation signal according to the observed power system states, therefore, to achieve more effective learning and modulating. Our control approach is validated on a wind power integrated benchmark system with two areas connected by HVDC transmission lines. Compared with the classical direct HDP and proportional integral control, our GrHDP approach demonstrates the improved transient stability under system faults. Moreover, experiments under different system operating conditions with signal transmission delays are also carried out to further verify the effectiveness and robustness of the proposed approach.

Design of a Humidity Sensor Tag for Passive Wireless Applications.

PubMed

Wu, Xiang; Deng, Fangming; Hao, Yong; Fu, Zhihui; Zhang, Lihua

2015-10-07

This paper presents a wireless humidity sensor tag for low-cost and low-power applications. The proposed humidity sensor tag, based on radio frequency identification (RFID) technology, was fabricated in a standard 0.18 μm complementary metal oxide semiconductor (CMOS) process. The top metal layer was deposited to form the interdigitated electrodes, which were then filled with polyimide as the humidity sensing layer. A two-stage rectifier adopts a dynamic bias-voltage generator to boost the effective gate-source voltage of the switches in differential-drive architecture, resulting in a flat power conversion efficiency curve. The capacitive sensor interface, based on phase-locked loop (PLL) theory, employs a simple architecture and can work with 0.5 V supply voltage. The measurement results show that humidity sensor tag achieves excellent linearity, hysteresis and stability performance. The total power-dissipation of the sensor tag is 2.5 μW, resulting in a maximum operating distance of 23 m under 4 W of radiation power of the RFID reader.

Design of a Humidity Sensor Tag for Passive Wireless Applications

PubMed Central

Wu, Xiang; Deng, Fangming; Hao, Yong; Fu, Zhihui; Zhang, Lihua

2015-01-01

This paper presents a wireless humidity sensor tag for low-cost and low-power applications. The proposed humidity sensor tag, based on radio frequency identification (RFID) technology, was fabricated in a standard 0.18 μm complementary metal oxide semiconductor (CMOS) process. The top metal layer was deposited to form the interdigitated electrodes, which were then filled with polyimide as the humidity sensing layer. A two-stage rectifier adopts a dynamic bias-voltage generator to boost the effective gate-source voltage of the switches in differential-drive architecture, resulting in a flat power conversion efficiency curve. The capacitive sensor interface, based on phase-locked loop (PLL) theory, employs a simple architecture and can work with 0.5 V supply voltage. The measurement results show that humidity sensor tag achieves excellent linearity, hysteresis and stability performance. The total power-dissipation of the sensor tag is 2.5 μW, resulting in a maximum operating distance of 23 m under 4 W of radiation power of the RFID reader. PMID:26457707

Electrical and optical characterization of n-InAsSb/n-GaSb heterojunctions

NASA Astrophysics Data System (ADS)

Lackner, D.; Martine, M.; Cherng, Y. T.; Steger, M.; Walukiewicz, W.; Thewalt, M. L. W.; Mooney, P. M.; Watkins, S. P.

2010-01-01

We report the electrical properties of n-InAsSb/n-GaSb heterojunctions as a function of the GaSb doping concentration. Because of the staggered type II band alignment, strong electron accumulation occurs on the InAsSb side. For low GaSb doping, depletion occurs on the GaSb side resulting in a Schottky-like junction as previously reported. As the GaSb doping increases, the built-in voltage as well as depletion width decreases as shown using self-consistent simulations. For GaSb doping levels above 5×1017 cm-3, the junction loses its rectifying properties due to tunneling. Under zero and reverse bias voltage, the photoresponse of these diodes is solely due to the photovoltaic effect in the GaSb depletion region. For forward bias voltages >400 mV, we also observed a photoconductive response from the InAsSb layer. The proposed physical mechanism is quite different from the one suggested in a recent paper.

Submicron nickel-oxide-gold tunnel diode detectors for rectennas

NASA Technical Reports Server (NTRS)

Hoofring, A. B.; Kapoor, V. J.; Krawczonek, W.

1989-01-01

The characteristics of a metal-oxide-metal (MOM) tunnel diode made of nickel, nickel-oxide, and gold, designed and fabricated by standard integrated circuit technology for use in FIR rectennas, are presented. The MOM tunnel diode was formed by overlapping a 0.8-micron-wide layer of 1000-A of nickel, which was oxidized to form a thin layer of nickel oxide, with a 1500 A-thick layer of gold. The dc current-voltage characteristics of the MOM diode showed that the current dependence on voltage was linear about zero bias up to a bias of about 70 mV. The maximum detection of a low-level signal (10-mV ac) was determined to be at a dc voltage of 70 mV across the MOM diode. The rectified output signal due to a chopped 10.6-micron CO2 laser incident upon the rectenna device was found to increase with dc bias, with a maximum value of 1000 nV for a junction bias of 100 mV at room temperature.

Power Control of New Wind Power Generation System with Induction Generator Excited by Voltage Source Converter

NASA Astrophysics Data System (ADS)

Morizane, Toshimitsu; Kimura, Noriyuki; Taniguchi, Katsunori

This paper investigates advantages of new combination of the induction generator for wind power and the power electronic equipment. Induction generator is popularly used for the wind power generation. The disadvantage of it is impossible to generate power at the lower rotor speed than the synchronous speed. To compensate this disadvantage, expensive synchronous generator with the permanent magnets is sometimes used. In proposed scheme, the diode rectifier is used to convert the real power from the induction generator to the intermediate dc voltage, while only the reactive power necessary to excite the induction generator is supplied from the voltage source converter (VSC). This means that the rating of the expensive VSC is minimized and total cost of the wind power generation system is decreased compared to the system with synchronous generator. Simulation study to investigate the control strategy of proposed system is performed. The results show the reduction of the VSC rating is prospective.

A low-power bidirectional telemetry device with a near-field charging feature for a cardiac microstimulator.

PubMed

Shuenn-Yuh Lee; Chih-Jen Cheng; Ming-Chun Liang

2011-08-01

In this paper, wireless telemetry using the near-field coupling technique with round-wire coils for an implanted cardiac microstimulator is presented. The proposed system possesses an external powering amplifier and an internal bidirectional microstimulator. The energy of the microstimulator is provided by a rectifier that can efficiently charge a rechargeable device. A fully integrated regulator and a charge pump circuit are included to generate a stable, low-voltage, and high-potential supply voltage, respectively. A miniature digital processor includes a phase-shift-keying (PSK) demodulator to decode the transmission data and a self-protective system controller to operate the entire system. To acquire the cardiac signal, a low-voltage and low-power monitoring analog front end (MAFE) performs immediate threshold detection and data conversion. In addition, the pacing circuit, which consists of a pulse generator (PG) and its digital-to-analog (D/A) controller, is responsible for stimulating heart tissue. The chip was fabricated by Taiwan Semiconductor Manufacturing Company (TSMC) with 0.35-μm complementary metal-oxide semiconductor technology to perform the monitoring and pacing functions with inductively powered communication. Using a model with lead and heart tissue on measurement, a -5-V pulse at a stimulating frequency of 60 beats per minute (bpm) is delivered while only consuming 31.5 μW of power.

Regulation of the instantaneous inward rectifier and the delayed outward rectifier potassium channels by Captopril and Angiotensin II via the Phosphoinositide-3 kinase pathway in volume-overload-induced hypertrophied cardiac myocytes.

PubMed

Alvin, Zikiar V; Laurence, Graham G; Coleman, Bernell R; Zhao, Aiqiu; Hajj-Moussa, Majd; Haddad, Georges E

2011-07-01

Early development of cardiac hypertrophy may be beneficial but sustained hypertrophic activation leads to myocardial dysfunction. Regulation of the repolarizing currents can be modulated by the activation of humoral factors, such as angiotensin II (ANG II) through protein kinases. The aim of this work is to assess the regulation of IK and IK1 by ANG II through the PI3-K pathway in hypertrophied ventricular myocytes. Cardiac eccentric hypertrophy was induced through volume-overload in adult male rats by aorto-caval shunt (3 weeks). After one week half of the rats were given captopril (2 weeks; 0.5 g/l/day) and the other half served as control. The voltage-clamp and western blot techniques were used to measure the delayed outward rectifier potassium current (IK) and the instantaneous inward rectifier potassium current (IK1) and Akt activity, respectively. Hypertrophied cardiomyocytes showed reduction in IK and IK1. Treatment with captopril alleviated this difference seen between sham and shunt cardiomyocytes. Acute administration of ANG II (10-6M) to cardiocytes treated with captopril reduced IK and IK1 in shunts, but not in sham. Captopril treatment reversed ANG II effects on IK and IK1 in a PI3-K-independent manner. However in the absence of angiotensin converting enzyme inhibition, ANG II increased both IK and IK1 in a PI3-K-dependent manner in hypertrophied cardiomyocytes. Thus, captopril treatment reveals a negative effect of ANG II on IK and IK1, which is PI3-K independent, whereas in the absence of angiotensin converting enzyme inhibition IK and IK1 regulation is dependent upon PI3-K.

Inward Rectifier K+ Currents Are Regulated by CaMKII in Endothelial Cells of Primarily Cultured Bovine Pulmonary Arteries.

PubMed

Qu, Lihui; Yu, Lei; Wang, Yanli; Jin, Xin; Zhang, Qianlong; Lu, Ping; Yu, Xiufeng; Zhong, Weiwei; Zheng, Xiaodong; Cui, Ningren; Jiang, Chun; Zhu, Daling

2015-01-01

Endothelium lines the interior surface of vascular walls and regulates vascular tones. The endothelial cells sense and respond to chemical and mechanical stimuli in the circulation, and couple the stimulus signals to vascular smooth muscles, in which inward rectifier K+ currents (Kir) play an important role. Here we applied several complementary strategies to determine the Kir subunit in primarily cultured pulmonary arterial endothelial cells (PAECs) that was regulated by the Ca2+/calmodulin (CaM)-dependent protein kinase II (CaMKII). In whole-cell voltage clamp, the Kir currents were sensitive to micromolar concentrations of extracellular Ba2+. In excised inside-out patches, an inward rectifier K+ current was observed with single-channel conductance 32.43 ± 0.45 pS and Popen 0.27 ± 0.04, which were consistent with known unitary conductance of Kir 2.1. RT-PCR and western blot results showed that expression of Kir 2.1 was significantly stronger than that of other subtypes in PAECs. Pharmacological analysis of the Kir currents demonstrated that insensitivity to intracellular ATP, pinacidil, glibenclamide, pH, GDP-β-S and choleratoxin suggested that currents weren't determined by KATP, Kir2.3, Kir2.4 and Kir3.x. The currents were strongly suppressed by exposure to CaMKII inhibitor W-7 and KN-62. The expression of Kir2.1 was inhibited by knocking down CaMKII. Consistently, vasodilation was suppressed by Ba2+, W-7 and KN-62 in isolated and perfused pulmonary arterial rings. These results suggest that the PAECs express an inward rectifier K+ current that is carried dominantly by Kir2.1, and this K+ channel appears to be targeted by CaMKII-dependent intracellular signaling systems.

Delayed Rectifier and A-Type Potassium Channels Associated with Kv 2.1 and Kv 4.3 Expression in Embryonic Rat Neural Progenitor Cells

PubMed Central

Smith, Dean O.; Rosenheimer, Julie L.; Kalil, Ronald E.

2008-01-01

Background Because of the importance of voltage-activated K+ channels during embryonic development and in cell proliferation, we present here the first description of these channels in E15 rat embryonic neural progenitor cells derived from the subventricular zone (SVZ). Activation, inactivation, and single-channel conductance properties of recorded progenitor cells were compared with those obtained by others when these Kv gene products were expressed in oocytes. Methodology/Principal Findings Neural progenitor cells derived from the subventricular zone of E15 embryonic rats were cultured under conditions that did not promote differentiation. Immunocytochemical and Western blot assays for nestin expression indicated that almost all of the cells available for recording expressed this intermediate filament protein, which is generally accepted as a marker for uncommitted embryonic neural progenitor cells. However, a very small numbers of the cells expressed GFAP, a marker for astrocytes, O4, a marker for immature oligodendrocytes, and βIII-tubulin, a marker for neurons. Using immunocytochemistry and Western blots, we detected consistently the expression of Kv2.1, and 4.3. In whole-cell mode, we recorded two outward currents, a delayed rectifier and an A-type current. Conclusions/Significance We conclude that Kv2.1, and 4.3 are expressed in E15 SVZ neural progenitor cells, and we propose that they may be associated with the delayed-rectifier and the A-type currents, respectively, that we recorded. These results demonstrate the early expression of delayed rectifier and A-type K+ currents and channels in embryonic neural progenitor cells prior to the differentiation of these cells. PMID:18270591

Comparison of cloned Kir2 channels with native inward rectifier K+ channels from guinea-pig cardiomyocytes

PubMed Central

Xin Liu, Gong; Derst, Christian; Schlichthörl, Günter; Heinen, Steffen; Seebohm, Guiscard; Brüggemann, Andrea; Kummer, Wolfgang; Veh, Rüdiger W; Daut, Jürgen; Preisig-Müller, Regina

2001-01-01

The aim of the study was to compare the properties of cloned Kir2 channels with the properties of native rectifier channels in guinea-pig (gp) cardiac muscle. The cDNAs of gpKir2.1, gpKir2.2, gpKir2.3 and gpKir2.4 were obtained by screening a cDNA library from guinea-pig cardiac ventricle. A partial genomic structure of all gpKir2 genes was deduced by comparison of the cDNAs with the nucleotide sequences derived from a guinea-pig genomic library. The cell-specific expression of Kir2 channel subunits was studied in isolated cardiomyocytes using a multi-cell RT-PCR approach. It was found that gpKir2.1, gpKir2.2 and gpKir2.3, but not gpKir2.4, are expressed in cardiomyocytes. Immunocytochemical analysis with polyclonal antibodies showed that expression of Kir2.4 is restricted to neuronal cells in the heart. After transfection in human embryonic kidney cells (HEK293) the mean single-channel conductance with symmetrical K+ was found to be 30.6 pS for gpKir2.1, 40.0 pS for gpKir2.2 and 14.2 pS for Kir2.3. Cell-attached measurements in isolated guinea-pig cardiomyocytes (n = 351) revealed three populations of inwardly rectifying K+ channels with mean conductances of 34.0, 23.8 and 10.7 pS. Expression of the gpKir2 subunits in Xenopus oocytes showed inwardly rectifying currents. The Ba2+ concentrations required for half-maximum block at -100 mV were 3.24 μm for gpKir2.1, 0.51 μm for gpKir2.2, 10.26 μm for gpKir2.3 and 235 μm for gpKir2.4. Ba2+ block of inward rectifier channels of cardiomyocytes was studied in cell-attached recordings. The concentration and voltage dependence of Ba2+ block of the large-conductance inward rectifier channels was virtually identical to that of gpKir2.2 expressed in Xenopus oocytes. Our results suggest that the large-conductance inward rectifier channels found in guinea-pig cardiomyocytes (34.0 pS) correspond to gpKir2.2. The intermediate-conductance (23.8 pS) and low-conductance (10.7 pS) channels described here may correspond to gpKir2.1 and gpKir2.3, respectively. PMID:11283229

Two-dimensional non-volatile programmable p-n junctions

NASA Astrophysics Data System (ADS)

Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M.; Zhang, Zengxing

2017-09-01

Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe2/hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 104 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.

Two-dimensional non-volatile programmable p-n junctions.

PubMed

Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M; Zhang, Zengxing

2017-09-01

Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe 2 /hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 10 4 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.

Investigations on rectifying behavior of Y{sub 0.95}Ca{sub 0.05}MnO{sub 3}/Si junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dhruv, Davit; V.V.P. Engineering College, Gujarat Technological University, Rajkot – 360 005; Joshi, Zalak

2016-05-06

In this communication, we report the rectifying properties observed across the junction, consists of Ca{sup +2} doped hexagonal YMnO{sub 3} manganite film, grown on n-type (100) Si single crystalline substrate. The junction was grown using cost effective chemical solution deposition (CSD) technique by employing spin coating method. Surface morphology of Y{sub 0.9}5Ca{sub 0.05}MnO{sub 3}/Si (YCMO/Si) film was carried out by atomic force microscopy and magnetic response of film was studied by magnetic force microscopy. Current – voltage characteristics of the junction was carried out by using Keithley source meter in current perpendicular to plane (CPP) mode at different temperatures. Rectificationmore » in I – V behavior has been observed for the junction at all the temperatures studied. With increase in temperature, rectification ratio, in the range of 10{sup 4}, increases across the junction. Results have been discussed in the context of thermal effects.« less

p - n junction diodes fabricated from isolated electrospun fibers of (P(NDI2ODT2)) and an inorganic p-doped semiconductor

NASA Astrophysics Data System (ADS)

Rosado, Alexander; Pinto, Nicholas

2013-03-01

A simple method to fabricate, under ambient conditions and within seconds, p - n diodes using an individual electrospun poly{[N, N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)}-(P(NDI2ODT2)) fiber and a commercially available p-doped Si/SiO2 substrate is presented. Band bending at the fiber/Si+ interface leads to asymmetric I-V characteristic curves resembling that of a diode. The diode turn-on voltage was in the range 1V and was unaffected via UV light irradiation. The rectification ratio however could be tuned reversibly thereby making this device multifunctional. In addition to being a rectifier, the advantage of our design is the complete exposure of the rectifying junction to the surrounding environment. This has the advantage of making them attractive candidates in the potential fabrication of low power, sensitive and rapid response photo-sensors. NSF

Rhynchophylline from Uncaria rhynchophylla functionally turns delayed rectifiers into A-Type K+ channels.

PubMed

Chou, Chun-Hsiao; Gong, Chi-Li; Chao, Chia-Chia; Lin, Chia-Huei; Kwan, Chiu-Yin; Hsieh, Ching-Liang; Leung, Yuk-Man

2009-05-22

Rhynchophylline (1), a neuroprotective agent isolated from the traditional Chinese medicinal herb Uncaria rhynchophylla, was shown to affect voltage-gated K(+) (Kv) channel slow inactivation in mouse neuroblastoma N2A cells. Extracellular 1 (30 microM) accelerated the slow decay of Kv currents and shifted the steady-state inactivation curve to the left. Intracellular dialysis of 1 did not accelerate the slow current decay, suggesting that this compound acts extracellularly. In addition, the percent blockage of Kv currents by this substance was independent of the degree of depolarization and the intracellular K(+) concentration. Therefore, 1 did not appear to directly block the outer channel pore, with the results obtained suggesting that it drastically accelerated Kv channel slow inactivation. Interestingly, 1 also shifted the activation curve to the left. This alkaloid also strongly accelerated slow inactivation and caused a left shift of the activation curve of Kv1.2 channels heterologously expressed in HEK293 cells. Thus, this compound functionally turned delayed rectifiers into A-type K(+) channels.

Physiological roles of Kv2 channels in entorhinal cortex layer II stellate cells revealed by Guangxitoxin‐1E

PubMed Central

Hönigsperger, Christoph; Nigro, Maximiliano J.

2016-01-01

Key points Kv2 channels underlie delayed‐rectifier potassium currents in various neurons, although their physiological roles often remain elusive. Almost nothing is known about Kv2 channel functions in medial entorhinal cortex (mEC) neurons, which are involved in representing space, memory formation, epilepsy and dementia.Stellate cells in layer II of the mEC project to the hippocampus and are considered to be space‐representing grid cells. We used the new Kv2 blocker Guangxitoxin‐1E (GTx) to study Kv2 functions in these neurons.Voltage clamp recordings from mEC stellate cells in rat brain slices showed that GTx inhibited delayed‐rectifier K+ current but not transient A‐type current.In current clamp, GTx had multiple effects: (i) increasing excitability and bursting at moderate spike rates but reducing firing at high rates; (ii) enhancing after‐depolarizations; (iii) reducing the fast and medium after‐hyperpolarizations; (iv) broadening action potentials; and (v) reducing spike clustering.GTx is a useful tool for studying Kv2 channels and their functions in neurons. Abstract The medial entorhinal cortex (mEC) is strongly involved in spatial navigation, memory, dementia and epilepsy. Although potassium channels shape neuronal activity, their roles in mEC are largely unknown. We used the new Kv2 blocker Guangxitoxin‐1E (GTx; 10–100 nm) in rat brain slices to investigate Kv2 channel functions in mEC layer II stellate cells (SCs). These neurons project to the hippocampus and are considered to be grid cells representing space. Voltage clamp recordings from SCs nucleated patches showed that GTx inhibited a delayed rectifier K+ current activating beyond –30 mV but not transient A‐type current. In current clamp, GTx (i) had almost no effect on the first action potential but markedly slowed repolarization of late spikes during repetitive firing; (ii) enhanced the after‐depolarization (ADP); (iii) reduced fast and medium after‐hyperpolarizations (AHPs); (iv) strongly enhanced burst firing and increased excitability at moderate spike rates but reduced spiking at high rates; and (v) reduced spike clustering and rebound potentials. The changes in bursting and excitability were related to the altered ADPs and AHPs. Kv2 channels strongly shape the activity of mEC SCs by affecting spike repolarization, after‐potentials, excitability and spike patterns. GTx is a useful tool and may serve to further clarify Kv2 channel functions in neurons. We conclude that Kv2 channels in mEC SCs are important determinants of intrinsic properties that allow these neurons to produce spatial representation. The results of the present study may also be important for the accurate modelling of grid cells. PMID:27562026

Stripe-teeth metamaterial Al- and Nb-based rectennas (Presentation Recording)

NASA Astrophysics Data System (ADS)

Osgood, Richard M.; Giardini, Stephen A.; Carlson, Joel B.; Joghee, Prabhuram; O'Hayre, Ryan P.; Diest, Kenneth; Rothschild, Mordechai

2015-09-01

Unlike a semiconductor, where the absorption is limited by the band gap, a "microrectenna array" could theoretically very efficiently rectify any desired portion of the infrared frequency spectrum (25 - 400 THz). We investigated vertical metal-insulator-metal (MIM) diodes that rectify vertical high-frequency fields produced by a metamaterial planar stripe-teeth Al or Au array (above the diodes), similar to stripe arrays that have demonstrated near-perfect absorption in the infrared due to critical coupling [1]. Using our design rules that maximize asymmetry (and therefore the component of the electric field pointed into the substrate, analogous to Second Harmonic Generation), we designed, fabricated, and analyzed these metamaterial-based microrectenna arrays. NbOx and Al2O3 were produced by anodization and ALD, respectively. Smaller visible-light Pt-NbOx-Nb rectennas have produced output power when illuminated by visible (514 nm) light [2]. The resonances of these new Au/NbOx/Nb and Al/Al2O3/Al microrectenna arrays, with larger dimensions and more complex nanostructures than in Ref. 1, were characterized by microscopic FTIR microscopy and agreed well with FDTD models, once the experimental refractive index values were entered into the model. Current-voltage measurements were carried out, showed that the Al/Al2O3/Al diodes have very large barrier heights and breakdown voltages, and were compared to our model of the MIM diode. We calculate expected THz-rectification using classical [3] and quantum [4] rectification models, and compare to measurements of direct current output, under infrared illumination. [1] C. Wu, et. al., Phys. Rev. B 84 (2011) 075102. [2] R. M. Osgood III, et. al., Proc. SPIE 8096, 809610 (2011). [3] A. Sanchez, et. al., J. Appl. Phys. 49 (1978) 5270. [4] J. R. Tucker and M. J. Feldman, Rev. of Mod. Phys. 57, (1985)1055.

Conduction and rectification in NbO x - and NiO-based metal-insulator-metal diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Osgood, Richard M.; Giardini, Stephen; Carlson, Joel

2016-09-01

Conduction and rectification in nanoantenna-coupled NbOx- and NiO-based metal-insulator-metal (MIM) diodes ('nanorectennas') are studied by comparing new theoretical predictions with the measured response of nanorectenna arrays. A new quantum mechanical model is reported and agrees with measurements of current-voltage (I-V) curves, over 10 orders of magnitude in current density, from [NbOx(native)-Nb2O5]- and NiO-based samples with oxide thicknesses in the range of 5-36 nm. The model, which introduces new physics and features, including temperature, electron effective mass, and image potential effects using the pseudobarrier technique, improves upon widely used earlier models, calculates the MIM diode's I-V curve, and predicts quantitatively themore » rectification responsivity of high frequency voltages generated in a coupled nanoantenna array by visible/near-infrared light. The model applies both at the higher frequencies, when high-energy photons are incident, and at lower frequencies, when the formula for classical rectification, involving derivatives of the I-V curve, may be used. The rectified low-frequency direct current is well-predicted in this work's model, but not by fitting the experimentally measured I-V curve with a polynomial or by using the older Simmons model (as shown herein). By fitting the measured I-V curves with our model, the barrier heights in Nb-(NbOx(native)-Nb2O5)-Pt and Ni-NiO-Ti/Ag diodes are found to be 0.41/0.77 and 0.38/0.39 eV, respectively, similar to literature reports, but with effective mass much lower than the free space value. The NbOx (native)-Nb2O5 dielectric properties improve, and the effective Pt-Nb2O5 barrier height increases as the oxide thickness increases. An observation of direct current of ~4 nA for normally incident, focused 514 nm continuous wave laser beams are reported, similar in magnitude to recent reports. This measured direct current is compared to the prediction for rectified direct current, given by the rectification responsivity, calculated from the I-V curve times input power.« less

GaN Microwave DC-DC Converters

NASA Astrophysics Data System (ADS)

Ramos Franco, Ignacio

Increasing the operating frequency of switching converters can have a direct impact in the miniaturization and integration of power converters. The size of energy-storage passive components and the difficulty to integrate them with the rest of the circuitry is a major challenge in the development of a fully integrated power supply on a chip. The work presented in this thesis attempts to address some of the difficulties encountered in the design of high-frequency converters by applying concepts and techniques usually used in the design of high-efficiency power amplifiers and high-efficiency rectifiers at microwave frequencies. The main focus is in the analysis, design, and characterization of dc-dc converters operating at microwave frequencies in the low gigahertz range. The concept of PA-rectifier duality, where a high-efficiency power amplifier operates as a high-efficiency rectifier is investigated through non-linear simulations and experimentally validated. Additionally, the concept of a self-synchronous rectifier, where a transistor rectifier operates synchronously without the need of a RF source or driver is demonstrated. A theoretical analysis of a class-E self-synchronous rectifier is presented and validated through non-linear simulations and experiments. Two GaN class-E2 dc-dc converters operating at a switching frequency of 1 and 1.2 GHz are demonstrated. The converters achieve 80 % and 75 % dc-dc efficiency respectively and are among the highest-frequency and highest-efficiency reported in the literature. The application of the concepts established in the analysis of a self-synchronous rectifier to a power amplifier culminated in the development of an oscillating, self-synchronous class-E 2 dc-dc converter. Finally, a proof-of-concept fully integrated GaN MMIC class-E 2 dc-dc converter switching at 4.6 GHz is demonstrated for the first time to the best of our knowledge. The 3.8 mm x 2.6 mm chip contains distributed inductors and does not require any external components. The maximum measured dc-dc efficiency is approximately 45%.

RF Rectification on LAPD and NSTX: the relationship between rectified currents and potentials

NASA Astrophysics Data System (ADS)

Perkins, R. J.; Carter, T.; Caughman, J. B.; van Compernolle, B.; Gekelman, W.; Hosea, J. C.; Jaworski, M. A.; Kramer, G. J.; Lau, C.; Martin, E. H.; Pribyl, P.; Tripathi, S. K. P.; Vincena, S.

2017-10-01

RF rectification is a sheath phenomenon important in the fusion community for impurity injection, hot spot formation on plasma-facing components, modifications of the scrape-off layer, and as a far-field sink of wave power. The latter is of particular concern for the National Spherical Torus eXperiment (NSTX), where a substantial fraction of the fast-wave power is lost to the divertor along scrape-off layer field lines. To assess the relationship between rectified currents and rectified voltages, detailed experiments have been performed on the Large Plasma Device (LAPD). An electron current is measured flowing out of the antenna and into the limiters, consistent with RF rectification with a higher RF potential at the antenna. The scaling of this current with RF power will be presented. The limiters are also floated to inhibit this DC current; the impact of this change on plasma-potential and wave-field measurements will be shown. Comparison to data from divertor probes in NSTX will be made. These experiments on a flexible mid-sized experiment will provide insight and guidance into the effects of ICRF on the edge plasma in larger fusion experiments. Funded by the DOE OFES (DE-FC02-07ER54918 and DE-AC02-09CH11466), NSF (NSF- PHY 1036140), and the Univ. of California (12-LR- 237124).

In Situ Chemical Modification of Schottky Barrier in Solution-Processed Zinc Tin Oxide Diode.

PubMed

Son, Youngbae; Li, Jiabo; Peterson, Rebecca L

2016-09-14

Here we present a novel in situ chemical modification process to form vertical Schottky diodes using palladium (Pd) rectifying bottom contacts, amorphous zinc tin oxide (Zn-Sn-O) semiconductor made via acetate-based solution process, and molybdenum top ohmic contacts. Using X-ray photoelectron spectroscopy depth profiling, we show that oxygen plasma treatment of Pd creates a PdOx interface layer, which is then reduced back to metallic Pd by in situ reactions during Zn-Sn-O film annealing. The plasma treatment ensures an oxygen-rich environment in the semiconductor near the Schottky barrier, reducing the level of oxygen-deficiency-related defects and improving the rectifying contact. Using this process, we achieve diodes with high forward current density exceeding 10(3)A cm(-2) at 1 V, rectification ratios of >10(2), and ideality factors of around 1.9. The measured diode current-voltage characteristics are compared to numerical simulations of thermionic field emission with sub-bandgap states in the semiconductor, which we attribute to spatial variations in metal stoichiometry of amorphous Zn-Sn-O. To the best of our knowledge, this is the first demonstration of vertical Schottky diodes using solution-processed amorphous metal oxide semiconductor. Furthermore, the in situ chemical modification method developed here can be adapted to tune interface properties in many other oxide devices.

Systematic study of metal-insulator-metal diodes with a native oxide

NASA Astrophysics Data System (ADS)

Donchev, E.; Gammon, P. M.; Pang, J. S.; Petrov, P. K.; Alford, N. McN.

2014-10-01

In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna). The requirement of having a sub-10nm oxide scale is met by using the native oxide, which forms on most metals exposed to an oxygen containing environment. This, therefore, provides a simplified MIM fabrication process as the complex, controlled oxide deposition step is omitted. We shall present the results of an investigation into the current-voltage characteristics of various MIM combinations that incorporate a native oxide, in order to establish whether the native oxide is of sufficient quality for good diode operation. The thin native oxide layers are formed by room temperature oxidation of the first metal layer, deposited by magnetron sputtering. This is done in-situ, within the deposition chamber before depositing the second metal electrode. Using these structures, we study the established trend where the bigger the difference in metal workfunctions, the better the rectification properties of MIM structures, and hence the selection of the second metal is key to controlling the device's rectifying properties. We show how leakage current paths through the non-optimised native oxide control the net current-voltage response of the MIM devices. Furthermore, we will present the so-called diode figures of merit (asymmetry, non-linearity and responsivity) for each of the best performing structures.

Synergistic Inhibition of Delayed Rectifier K+ and Voltage-Gated Na+ Currents by Artemisinin in Pituitary Tumor (GH3) Cells.

PubMed

So, Edmund Cheung; Wu, Sheng-Nan; Wu, Ping-Ching; Chen, Hui-Zhen; Yang, Chia-Jung

2017-01-01

Artemisinin (ART) is an anti-malarial agent reported to influence endocrine function. Effects of ART on ionic currents and action potentials (APs) in pituitary tumor (GH3) cells were evaluated by patch clamp techniques. ART inhibited the amplitude of delayed-rectifier K+ current (IK(DR)) in response to membrane depolarization and accelerated the process of current inactivation. It exerted an inhibitory effect on IK(DR) with an IC50 value of 11.2 µM and enhanced IK(DR) inactivation with a KD value of 14.7 µM. The steady-state inactivation curve of IK(DR) was shifted to hyperpolarization by 10 mV. Pretreatment of chlorotoxin (1 µM) or iloprost (100 nM) did not alter the magnitude of ART-induced inhibition of IK(DR) in GH3 cells. ART also decreased the peak amplitude of voltage-gated Na+ current (INa) with a concentration-dependent slowing in inactivation rate. Application of KMUP-1, an inhibitor of late INa, was effective at reversing ART-induced prolongation in inactivation time constant of INa. Under current-clamp recordings, ART alone reduced the amplitude of APs and prolonged the duration of APs. Under ART exposure, the inhibitory actions on both IK(DR) and INa could be a potential mechanisms through which this drug influences membrane excitability of endocrine or neuroendocrine cells appearing in vivo. © 2017 The Author(s). Published by S. Karger AG, Basel.

Fabrication and electrical characterization of Al/diazo compound containing polyoxy chain/p-Si device structure

NASA Astrophysics Data System (ADS)

Birel, Ozgul; Kavasoglu, Nese; Kavasoglu, A. Sertap; Dincalp, Haluk; Metin, Bengul

2013-03-01

Diazo-compounds are important class of chemical compounds in terms of optical and electronic properties which make them potentially attractive for device applications. Diazo compound containing polyoxy chain has been deposited on p-Si. Current-voltage characteristics of Al/diazo compound containing polyoxy chain/p-Si structure present rectifying behaviour. The Schottky barrier height (SBH), diode factor (n), reverse saturation current (Io), interface state density (Nss) of Al/diazo compound containing polyoxy chain/p-Si structure have been calculated from experimental forward bias current-voltage data measured in the temperature range 100-320 K and capacitance-voltage data measured at room temperature and 1 MHz. The calculated values of SBH have ranged from 0.041 and 0.151 eV for the high and low temperature regions. Diode factor values fluctuate between the values 14 and 18 with temperature. Such a high diode factors stem from disordered interface layer in a junction structure as stated by Brötzmann et al. [M. Brötzmann, U. Vetter, H. Hofsäss, J. Appl. Phys. 106 (2009) 063704]. The calculated values of saturation current have ranged from 3×10-11 A to 2.79×10-7 A and interface state density have ranged from 5×1011 eV-1 cm-2 and 4×1013 eV-1 cm-2 as temperature increases. Results show that Al/diazo compound containing polyoxy chain/p-Si structure is a valuable candidate for device applications in terms of low reverse saturation current and low interface state density.

Synthesis and Characterization of Reduced Graphene Oxide/Rhodamine 101 (rGO-Rh101) Nanocomposites and Their Heterojunction Performance in rGO-Rh101/ p-Si Device Configuration

NASA Astrophysics Data System (ADS)

Batır, G. Güven; Arık, Mustafa; Caldıran, Zakir; Turut, Abdulmecit; Aydogan, Sakir

2018-01-01

Reduced graphene oxide (rGO)-rhodamine 101 (Rh101) nanocomposites with different ratios of rGO have been synthesized in aqueous medium by ultrasonic homogenization. The fluorescence of Rh101 as measured using a laser dye with high fluorescence quantum yield was substantially quenched with increasing amount of rGO in the nanocomposite. Formation of rGO-Rh101 nanocomposites was confirmed by x-ray diffraction analysis, scanning electron microscopy, ultraviolet-visible (UV-Vis) spectroscopy, and fluorescence microscopy. Furthermore, rGO-Rh101 nanocomposite/ p-Si heterojunctions were synthesized, all of which showed good rectifying behavior. The electrical characteristics of these devices were analyzed using current-voltage ( I- V) measurements to determine the ideality factor and barrier height. The experimental results confirmed the presence of lateral inhomogeneity in the effective barrier height of the rGO-Rh101 nanocomposite/ p-Si heterojunctions. In addition to I- V measurements, one device was analyzed in more detail using frequency-dependent capacitance-voltage measurements. All electrical measurements were carried out at room temperature and in the dark.

Pulse generator using transistors and silicon controlled rectifiers produces high current pulses with fast rise and fall times

NASA Technical Reports Server (NTRS)

Woolfson, M. G.

1966-01-01

Electrical pulse generator uses power transistors and silicon controlled rectifiers for producing a high current pulse having fast rise and fall times. At quiescent conditions, the standby power consumption of the circuit is equal to zero.

Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures

NASA Astrophysics Data System (ADS)

Li, Junmei; Guo, Wei; Jiang, Jie'an; Gao, Pingqi; Bo, Baoxue; Ye, Jichun

2018-03-01

We report the fabrication of a NiO thin film on top of an n-type GaN epitaxial layer. The electron-blocking capability of NiO in a hybrid organic/inorganic heterostructure consisting of n-GaN/NiO/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is discussed. Surface morphology, crystallography orientation, bandgap, and fermi level information of NiO films were investigated in detail. A rectifying property consistent with the proposed band diagram was observed in the current-voltage measurement. Theoretical analysis also demonstrated the effective electron blocking due to band alignment and a more balanced carrier distribution inside the GaN region with NiO inserted into the n-GaN/PEDOT:PSS heterostructure. This work provides a promising approach to the fabrication of high-efficiency hybrid optoelectronic devices.

Lightweight multiple output converter development

NASA Technical Reports Server (NTRS)

Kisch, J. J.; Martinelli, R. M.

1978-01-01

A high frequency, multiple output power conditioner was developed and breadboarded using an eight-stage capacitor diode voltage multiplier to provide +1200 Vdc, and a three-stage for -350 Vdc. In addition, two rectifier bridges were capacitively coupled to the eight-stage multiplier to obtain 0.5 and 0.65 a dc constant current outputs referenced to +1200 Vdc. Total power was 120 watts, with an overall efficiency of 85 percent at the 80 kHz operating frequency. All outputs were regulated to three percent or better, with complete short circuit protection. The power conditioner component weight and efficiency were compared to the equivalent four outputs of the 10 kHz conditioner for the 8 cm ion engine. Weight reduction for the four outputs was 557 grams; extrapolated in the same ratio to all nine outputs, it would be 1100 to 1400 grams.

Investigation of Passive Filter for LED Lamp

NASA Astrophysics Data System (ADS)

Sarwono, Edi; Facta, Mochammad; Handoko, Susatyo

2017-04-01

Light Emitting Diode lamp or LED lamp is one of the energy saving lamps nowadays widely used by consumers. However, LED lamp has contained harmonics caused by the rectifier circuit inside the lamp. Harmonics cause a quality problem in power system. As the harmonics present in current or voltage, the waveforms are distorted. Harmonics can lead to overheating in magnetic core of electrical equipments. In this paper, several tests are carried out to investigate the harmonic content of voltage and currents, and also the level of light intensity of the two brands of LED lamps. Measurements in this study are conducted by using HIOKI Power Quality Analyzer 3197. The test results show that the total harmonic distortion or THD of voltage on various brands of LED lamps did not exceed 5% as in compliance to the limit of IEEE standard 519-1992. The largest harmonic voltage is 2.9%, while maximum harmonic current for tested brands of LED lamp is 170.6%. The use of low pass filter in the form of LC filter was proposed. Based on experimental results, the application of LC filter at input side of LED lamp has successfully reduced THD current in the range of 85%-88%.

Zero-bias microwave detectors based on array of nanorectifiers coupled with a dipole antenna

NASA Astrophysics Data System (ADS)

Kasjoo, Shahrir R.; Singh, Arun K.; Mat Isa, Siti S.; Ramli, Muhammad M.; Mohamad Isa, Muammar; Ahmad, Norhawati; Mohd Nor, Nurul I.; Khalid, Nazuhusna; Song, Ai Min

2016-04-01

We report on zero-bias microwave detection using a large array of unipolar nanodevices, known as the self-switching diodes (SSDs). The large array was realized in a single lithography step without the need of interconnection layers, hence allowing for a simple and low-cost fabrication process. The SSD array was coupled with a narrowband dipole antenna with a resonant frequency of 890 MHz, to form a simple rectenna (rectifying antenna). The extrinsic voltage responsivity and noise-equivalent-power (NEP) of the rectenna were ∼70 V/W and ∼0.18 nW/Hz1/2, respectively, measured in the far-field region at unbiased condition. Nevertheless, the estimated intrinsic voltage responsivity can achieve up to ∼5 kV/W with NEP of ∼2.6 pW/Hz1/2.

Electrical Characterization of Graphite/InP Schottky Diodes by I-V-T and C-V Methods

NASA Astrophysics Data System (ADS)

Tiagulskyi, Stanislav; Yatskiv, Roman; Grym, Jan

2018-02-01

A rectifying junction was prepared by casting a drop of colloidal graphite on the surface of an InP substrate. The electrophysical properties of graphite/InP junctions were investigated in a wide temperature range. Temperature-dependent I-V characteristics of the graphite/InP junctions are explained by the thermionic emission mechanism. The Schottky barrier height (SBH) and the ideality factor were found to be 0.9 eV and 1.47, respectively. The large value of the SBH and its weak temperature dependence are explained by lateral homogeneity of the junction, which is related to the structure of the graphite layer. The moderate disagreement between the current-voltage and capacitance-voltage measurements is attributed to the formation of interfacial native oxide film on the InP surface.

Efficiency estimation method of three-wired AC to DC line transfer

NASA Astrophysics Data System (ADS)

Solovev, S. V.; Bardanov, A. I.

2018-05-01

The development of power semiconductor converters technology expands the scope of their application to medium voltage distribution networks (6-35 kV). Particularly rectifiers and inverters of appropriate power capacity complement the topology of such voltage level networks with the DC links and lines. The article presents a coefficient that allows taking into account the increase of transmission line capacity depending on the parameters of it. The application of the coefficient is presented by the example of transfer three-wired AC line to DC in various methods. Dependences of the change in the capacity from the load power factor of the line and the reactive component of the resistance of the transmission line are obtained. Conclusions are drawn about the most efficient ways of converting a three-wired AC line to direct current.

Variable N-type negative resistance in an injection-gated double-injection diode

NASA Technical Reports Server (NTRS)

Kapoor, A. K.; Henderson, H. T.

1981-01-01

Double-injection (DI) switching devices consist of p+ and n+ contacts (for hole and electron injection, respectively), separated by a near intrinsic semiconductor region containing deep traps. Under proper conditions, these devices exhibit S-type differential negative resistance (DNR) similar to silicon-controlled rectifiers. With the added influence of a p+ gate appropriately placed between the anode (p+) and cathode (n+), the current-voltage characteristic of the device has been manipulated for the first time to exhibit a variable N-type DNR. The anode current and the anode-to-cathode voltage levels at which this N-type DNR is observed can be varied by changing the gate-to-cathode bias. In essence, the classical S-type DI diode can be electronically transformed into an N-type diode. A first-order phenomenological model is proposed for the N-type DNR.

MATLAB implementation of a dynamic clamp with bandwidth >125 KHz capable of generating INa at 37°C

PubMed Central

Clausen, Chris; Valiunas, Virginijus; Brink, Peter R.; Cohen, Ira S.

2012-01-01

We describe the construction of a dynamic clamp with bandwidth >125 KHz that utilizes a high performance, yet low cost, standard home/office PC interfaced with a high-speed (16 bit) data acquisition module. High bandwidth is achieved by exploiting recently available software advances (code-generation technology, optimized real-time kernel). Dynamic-clamp programs are constructed using Simulink, a visual programming language. Blocks for computation of membrane currents are written in the high-level matlab language; no programming in C is required. The instrument can be used in single- or dual-cell configurations, with the capability to modify programs while experiments are in progress. We describe an algorithm for computing the fast transient Na+ current (INa) in real time, and test its accuracy and stability using rate constants appropriate for 37°C. We then construct a program capable of supplying three currents to a cell preparation: INa, the hyperpolarizing-activated inward pacemaker current (If), and an inward-rectifier K+ current (IK1). The program corrects for the IR drop due to electrode current flow, and also records all voltages and currents. We tested this program on dual patch-clamped HEK293 cells where the dynamic clamp controls a current-clamp amplifier and a voltage-clamp amplifier controls membrane potential, and current-clamped HEK293 cells where the dynamic clamp produces spontaneous pacing behavior exhibiting Na+ spikes in otherwise passive cells. PMID:23224681

46 CFR 111.33-7 - Alarms and shutdowns.

Code of Federal Regulations, 2010 CFR

2010-10-01

... REQUIREMENTS Power Semiconductor Rectifier Systems § 111.33-7 Alarms and shutdowns. Each power semiconductor rectifier must have a high temperature alarm or shutdown, except as provided in § 111.33-11. ...

Semiconducting ZnSnN{sub 2} thin films for Si/ZnSnN{sub 2} p-n junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qin, Ruifeng; Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, and Key Laboratory of Additive Manufacturing Materials of Zhejiang Province, Ningbo 315201; Cao, Hongtao

ZnSnN{sub 2} is regarded as a promising photovoltaic absorber candidate due to earth-abundance, non-toxicity, and high absorption coefficient. However, it is still a great challenge to synthesize ZnSnN{sub 2} films with a low electron concentration, in order to promote the applications of ZnSnN{sub 2} as the core active layer in optoelectronic devices. In this work, polycrystalline and high resistance ZnSnN{sub 2} films were fabricated by magnetron sputtering technique, then semiconducting films were achieved after post-annealing, and finally Si/ZnSnN{sub 2} p-n junctions were constructed. The electron concentration and Hall mobility were enhanced from 2.77 × 10{sup 17} to 6.78 × 10{sup 17 }cm{sup −3} and frommore » 0.37 to 2.07 cm{sup 2} V{sup −1} s{sup −1}, corresponding to the annealing temperature from 200 to 350 °C. After annealing at 300 °C, the p-n junction exhibited the optimum rectifying characteristics, with a forward-to-reverse ratio over 10{sup 3}. The achievement of this ZnSnN{sub 2}-based p-n junction makes an opening step forward to realize the practical application of the ZnSnN{sub 2} material. In addition, the nonideal behaviors of the p-n junctions under both positive and negative voltages are discussed, in hope of suggesting some ideas to further improve the rectifying characteristics.« less

Integrative Approach with Electrophysiological and Theoretical Methods Reveals a New Role of S4 Positively Charged Residues in PKD2L1 Channel Voltage-Sensing.

PubMed

Numata, Tomohiro; Tsumoto, Kunichika; Yamada, Kazunori; Kurokawa, Tatsuki; Hirose, Shinichi; Nomura, Hideki; Kawano, Mitsuhiro; Kurachi, Yoshihisa; Inoue, Ryuji; Mori, Yasuo

2017-08-29

Numerical model-based simulations provide important insights into ion channel gating when experimental limitations exist. Here, a novel strategy combining numerical simulations with patch clamp experiments was used to investigate the net positive charges in the putative transmembrane segment 4 (S4) of the atypical, positively-shifted voltage-dependence of polycystic kidney disease 2-like 1 (PKD2L1) channel. Charge-neutralising mutations (K452Q, K455Q and K461Q) in S4 reduced gating charges, positively shifted the Boltzmann-type activation curve [i.e., open probability (P open )-V curve] and altered the time-courses of activation/deactivation of PKD2L1, indicating that this region constitutes part of a voltage sensor. Numerical reconstruction of wild-type (WT) and mutant PKD2L1-mediated currents necessitated, besides their voltage-dependent gating parameters, a scaling factor that describes the voltage-dependence of maximal conductance, G max . Subsequent single-channel conductance (γ) measurements revealed that voltage-dependence of G max in WT can be explained by the inward-rectifying property of γ, which is greatly changed in PKD2L1 mutants. Homology modelling based on PKD2 and Na V Ab structures suggest that such voltage dependence of P open and γ in PKD2L1 could both reflect the charged state of the S4 domain. The present conjunctive experimental and theoretical approaches provide a framework to explore the undetermined mechanism(s) regulating TRP channels that possess non-classical voltage-dependent properties.

Left-to-right atrial inward rectifier potassium current gradients in patients with paroxysmal versus chronic atrial fibrillation.

PubMed

Voigt, Niels; Trausch, Anne; Knaut, Michael; Matschke, Klaus; Varró, András; Van Wagoner, David R; Nattel, Stanley; Ravens, Ursula; Dobrev, Dobromir

2010-10-01

Recent evidence suggests that atrial fibrillation (AF) is maintained by high-frequency reentrant sources with a left-to-right-dominant frequency gradient, particularly in patients with paroxysmal AF (pAF). Unequal left-to-right distribution of inward rectifier K(+) currents has been suggested to underlie this dominant frequency gradient, but this hypothesis has never been tested in humans. Currents were measured with whole-cell voltage-clamp in cardiomyocytes from right atrial (RA) and left (LA) atrial appendages of patients in sinus rhythm (SR) and patients with AF undergoing cardiac surgery. Western blot was used to quantify protein expression of I(K1) (Kir2.1 and Kir2.3) and I(K,ACh) (Kir3.1 and Kir3.4) subunits. Basal current was ≈2-fold larger in chronic AF (cAF) versus SR patients, without RA-LA differences. In pAF, basal current was ≈2-fold larger in LA versus RA, indicating a left-to-right atrial gradient. In both atria, Kir2.1 expression was ≈2-fold greater in cAF but comparable in pAF versus SR. Kir2.3 levels were unchanged in cAF and RA-pAF but showed a 51% decrease in LA-pAF. In SR, carbachol-activated (2 μmol/L) I(K,ACh) was 70% larger in RA versus LA. This right-to-left atrial gradient was decreased in pAF and cAF caused by reduced I(K,ACh) in RA only. Similarly, in SR, Kir3.1 and Kir3.4 proteins were greater in RA versus LA and decreased in RA of pAF and cAF. Kir3.1 and Kir3.4 expression was unchanged in LA of pAF and cAF. Our results support the hypothesis that a left-to-right gradient in inward rectifier background current contributes to high-frequency sources in LA that maintain pAF. These findings have potentially important implications for development of atrial-selective therapeutic approaches.

Left-to-Right Atrial Inward Rectifier Potassium Current Gradients in Patients With Paroxysmal Versus Chronic Atrial Fibrillation

PubMed Central

Voigt, Niels; Trausch, Anne; Knaut, Michael; Matschke, Klaus; Varró, András; Van Wagoner, David R.; Nattel, Stanley; Ravens, Ursula; Dobrev, Dobromir

2018-01-01

Background Recent evidence suggests that atrial fibrillation (AF) is maintained by high-frequency reentrant sources with a left-to-right–dominant frequency gradient, particularly in patients with paroxysmal AF (pAF). Unequal left-to-right distribution of inward rectifier K+ currents has been suggested to underlie this dominant frequency gradient, but this hypothesis has never been tested in humans. Methods and Results Currents were measured with whole-cell voltage-clamp in cardiomyocytes from right atrial (RA) and left (LA) atrial appendages of patients in sinus rhythm (SR) and patients with AF undergoing cardiac surgery. Western blot was used to quantify protein expression of IK1 (Kir2.1 and Kir2.3) and IK,ACh (Kir3.1 and Kir3.4) subunits. Basal current was ≈2-fold larger in chronic AF (cAF) versus SR patients, without RA-LA differences. In pAF, basal current was ≈2-fold larger in LA versus RA, indicating a left-to-right atrial gradient. In both atria, Kir2.1 expression was ≈2-fold greater in cAF but comparable in pAF versus SR. Kir2.3 levels were unchanged in cAF and RA-pAF but showed a 51% decrease in LA-pAF. In SR, carbachol-activated (2 μmol/L) IK,ACh was 70% larger in RA versus LA. This right-to-left atrial gradient was decreased in pAF and cAF caused by reduced IK,ACh in RA only. Similarly, in SR, Kir3.1 and Kir3.4 proteins were greater in RA versus LA and decreased in RA of pAF and cAF. Kir3.1 and Kir3.4 expression was unchanged in LA of pAF and cAF. Conclusions Our results support the hypothesis that a left-to-right gradient in inward rectifier background current contributes to high-frequency sources in LA that maintain pAF. These findings have potentially important implications for development of atrial-selective therapeutic approaches. PMID:20657029

Polycrystalline BiFeO{sub 3} thin film synthesized via sol-gel assisted spin coating technique for photosensitive application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bogle, K. A., E-mail: kashinath.bogle@gmail.com; Narwade, R. D.; Mahabole, M. P.

2016-05-06

We are reporting photosensitivity property of BiFeO{sub 3} thin film under optical illumination. The thin film used for photosensitivity work was fabricated via sol-gel assisted spin coating technique. I-V measurements on the Cu/BiFeO{sub 3}/Al structure under dark condition show a good rectifying property and show dramatic blue shit in threshold voltage under optical illumination. The microstructure, morphology and elemental analysis of the films were characterized by using XRD, UV-Vis, FTIR, SEM and EDS.

Excitonic processes at organic heterojunctions

NASA Astrophysics Data System (ADS)

He, ShouJie; Lu, ZhengHong

2018-02-01

Understanding excitonic processes at organic heterojunctions is crucial for development of organic semiconductor devices. This article reviews recent research on excitonic physics that involve intermolecular charge transfer (CT) excitons, and progress on understanding relationships between various interface energy levels and key parameters governing various competing interface excitonic processes. These interface excitonic processes include radiative exciplex emission, nonradiative recombination, Auger electron emission, and CT exciton dissociation. This article also reviews various device applications involving interface CT excitons, such as organic light-emitting diodes (OLEDs), organic photovoltaic cells, organic rectifying diodes, and ultralow-voltage Auger OLEDs.

Minimizing the total harmonic distortion for a 3 kW, 20 kHz ac to dc converter using SPICE

NASA Technical Reports Server (NTRS)

Lollar, Louis F.; Kapustka, Robert E.

1988-01-01

This paper describes the SPICE model of a transformer-rectified-filter (TRF) circuit and the Micro-CAP (Microcomputer Circuit Analysis Program) model and their application. The models were used to develop an actual circuit with reduced input current THD. The SPICE analysis consistently predicted the THD improvements in actual circuits as various designs were attempted. In an effort to predict and verify load regulation, the incorporation of saturable inductor models significantly improved the fidelity of the TRF circuit output voltage.

Baseline tests of the EVA change-of-pace coupe electric passenger vehicle

NASA Technical Reports Server (NTRS)

Bozek, J. M.; Maslowski, E. A.; Dustin, M. O.

1977-01-01

The EVA Change-of-Pace Coupe, is an electric passenger vehicle, to characterize the state-of-the-art of electric vehicles. The EVA Change-of-Pace Coupe is a four passenger sedan that has been coverted to an electric vehicle. It is powered by twenty 6 volt traction batteries through a silicon controlled rectifier chopper controller actuated by a foot throttle to change the voltage applied to the series wound, direct current motor. Braking is accomplished with a vacuum assist hydraulic braking system. Regenerative braking is also provided.

Development of a Compact Rectenna for Wireless Powering of a Head-Mountable Deep Brain Stimulation Device

PubMed Central

Kouzani, Abbas Z.; Tye, Susannah J.; Abulseoud, Osama A.; Amiet, Andrew; Galehdar, Amir; Kaynak, Akif; Berk, Michael

2014-01-01

Design of a rectangular spiral planar inverted-F antenna (PIFA) at 915 MHz for wireless power transmission applications is proposed. The antenna and rectifying circuitry form a rectenna, which can produce dc power from a distant radio frequency energy transmitter. The generated dc power is used to operate a low-power deep brain stimulation pulse generator. The proposed antenna has the dimensions of 10 mm \\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{upgreek} \\usepackage{mathrsfs} \\setlength{\\oddsidemargin}{-69pt} \\begin{document} }{}$\\times\\,$ \\end{document}12.5 mm \\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{upgreek} \\usepackage{mathrsfs} \\setlength{\\oddsidemargin}{-69pt} \\begin{document} }{}$\\times\\,$ \\end{document}1.5 mm and resonance frequency of 915 MHz with a measured bandwidth of 15 MHz at return loss of \\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{upgreek} \\usepackage{mathrsfs} \\setlength{\\oddsidemargin}{-69pt} \\begin{document} }{}${-}{\\rm 10}~{\\rm dB}$ \\end{document}. A dielectric substrate of FR-4 of \\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{upgreek} \\usepackage{mathrsfs} \\setlength{\\oddsidemargin}{-69pt} \\begin{document} }{}$\\varepsilon _{r}=4.8$ \\end{document} and \\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{upgreek} \\usepackage{mathrsfs} \\setlength{\\oddsidemargin}{-69pt} \\begin{document} }{}$\\delta=0.015$ \\end{document} with thickness of 1.5 mm is used for both antenna and rectifier circuit simulation and fabrication because of its availability and low cost. An L-section impedance matching circuit is used between the PIFA and voltage doubler rectifier. The impedance matching circuit also works as a low-pass filter for elimination of higher order harmonics. Maximum dc voltage at the rectenna output is 7.5 V in free space and this rectenna can drive a deep brain stimulation pulse generator at a distance of 30 cm from a radio frequency energy transmitter, which transmits power of 26.77 dBm. PMID:27170863

Molecular basis and function of voltage-gated K+ channels in pulmonary arterial smooth muscle cells.

PubMed

Yuan, X J; Wang, J; Juhaszova, M; Golovina, V A; Rubin, L J

1998-04-01

K(+)-channel activity-mediated alteration of the membrane potential and cytoplasmic free Ca2+ concentration ([Ca2+]cyt) is a pivotal mechanism in controlling pulmonary vasomotor tone. By using combined approaches of patch clamp, imaging fluorescent microscopy, and molecular biology, we examined the electrophysiological properties of K+ channels and the role of different K+ currents in regulating [Ca2+]cyt and explored the molecular identification of voltage-gated K+ (KV)- and Ca(2+)-activated K+ (KCa)-channel genes expressed in pulmonary arterial smooth muscle cells (PASMC). Two kinetically distinct KV currents [IK(V)], a rapidly inactivating (A-type) and a noninactivating delayed rectifier, as well as a slowly activated KCa current [IK(Ca)] were identified. IK(V) was reversibly inhibited by 4-aminopyridine (5 mM), whereas IK(Ca) was significantly inhibited by charybdotoxin (10-20 nM). K+ channels are composed of pore-forming alpha-subunits and auxiliary beta-subunits. Five KV-channel alpha-subunit genes from the Shaker subfamily (KV1.1, KV1.2, KV1.4, KV1.5, and KV1.6), a KV-channel alpha-subunit gene from the Shab subfamily (KV2.1), a KV-channel modulatory alpha-subunit (KV9.3), and a KCa-channel alpha-subunit gene (rSlo), as well as three KV-channel beta-subunit genes (KV beta 1.1, KV beta 2, and KV beta 3) are expressed in PASMC. The data suggest that 1) native K+ channels in PASMC are encoded by multiple genes; 2) the delayed rectifier IK(V) may be generated by the KV1.1, KV1.2, KV1.5, KV1.6, KV2.1, and/or KV2.1/KV9.3 channels; 3) the A-type IK(V) may be generated by the KV1.4 channel and/or the delayed rectifier KV channels (KV1 subfamily) associated with beta-subunits; and 4) the IK(Ca) may be generated by the rSlo gene product. The function of the KV channels plays an important role in the regulation of membrane potential and [Ca2+]cyt in PASMC.

SiC Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1998-01-01

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Silicon Carbide Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2006-01-01

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun, E-mail: duck@hanyang.ac.kr

2015-08-03

We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-currentmore » density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.« less

Properties of an inward rectifying K channel in the membrane of guinea-pig atrial cardioballs.

PubMed

Bechem, M; Glitsch, H G; Pott, L

1983-11-01

Single channel outward current fluctuations are recorded in excised (outside-out) membrane patches of isolated atrial cells in culture (cardioballs) from hearts of adult guinea-pigs. The ionic channel displays a high selectivity to K ions. Accordingly the reversal potential of the single channel current is close to the K equilibrium potential. The open channel conductance is unaffected by the membrane potential but depends on the K concentration of the outside solution (19.7pS at 2 mM Ko to 30.7pS at 20 mM Ko). The open state probability (Po) of the channel shows a marked voltage dependence. Po amounts to c.0.9 at -40 mV and decreases to c.0.1 at +40 mV. Under the assumption of no channel interaction a macroscopic steady state current voltage relationship is reconstructed from the single channel data. The relationship displays inward-going rectification. The rectification is due to the voltage dependence of Po. The I-V curve displays a negative slope at membrane potentials positive to -15 mV. In bathing solutions containing Ba ions (0.2 mM) Po is reduced by rapid closures which interrupt the open state events. The unit channel conductance is unaffected by Ba ions. The channel block exerted by Ba ions is augmented with increasing membrane hyperpolarization. The results suggest that the channel studied may represent a background K conductance.

Switching power pulse system

DOEpatents

Aaland, K.

1983-08-09

A switching system for delivering pulses of power from a source to a load using a storage capacitor charged through a rectifier, and maintained charged to a reference voltage level by a transistor switch and voltage comparator. A thyristor is triggered to discharge the storage capacitor through a saturable reactor and fractional turn saturable transformer having a secondary to primary turn ratio N of n:l/n = n[sup 2]. The saturable reactor functions as a soaker'' while the thyristor reaches saturation, and then switches to a low impedance state. The saturable transformer functions as a switching transformer with high impedance while a load coupling capacitor charges, and then switches to a low impedance state to dump the charge of the storage capacitor into the load through the coupling capacitor. The transformer is comprised of a multilayer core having two secondary windings tightly wound and connected in parallel to add their output voltage and reduce output inductance, and a number of single turn windings connected in parallel at nodes for the primary winding, each single turn winding linking a different one of the layers of the multilayer core. The load may be comprised of a resistive beampipe for a linear particle accelerator and capacitance of a pulse forming network. To hold off discharge of the capacitance until it is fully charged, a saturable core is provided around the resistive beampipe to isolate the beampipe from the capacitance until it is fully charged. 5 figs.

A Battery Charger and State of Charge Indicator

NASA Technical Reports Server (NTRS)

Latos, T. S.

1984-01-01

A battery charger which has a full wave rectifier in series with a transformer isolated 20 kHz dc-dc converter with high frequency switches, which are programmed to actively shape the input dc line current to be a mirror image of the ac line voltage is discussed. The power circuit operates at 2 kW peak and 1 kW average power. The BC/SCI has two major subsystems: (1) the battery charger power electronics with its controls; and (2) a microcomputer subsystem which is used to acquire battery terminal data and exercise the state of charge software programs. The state of charge definition employed is the energy remaining in the battery when extracted at a 10 kW rate divided by the energy capacity of a fully charged new battery. The battery charger circuit is an isolated boost converter operating at an internal frequency of 20 kHz. The switches selected for the battery charger are the single most important item in determining its efficiency. The combination of voltage and current requirements dictate the use of high power NPN Darlington switching transistors. The power circuit topology is a three switch design which utilizes a power FET on the center tap of the isolation transformer and the power Darlingtons on each of the two ends. An analog control system is employed to accomplish active input current waveshaping as well as the necessary regulation.

Inelastic effects in molecular transport junctions: The probe technique at high bias

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kilgour, Michael; Segal, Dvira, E-mail: dsegal@chem.utoronto.ca

2016-03-28

We extend the Landauer-Büttiker probe formalism for conductances to the high bias regime and study the effects of environmentally induced elastic and inelastic scattering on charge current in single molecule junctions, focusing on high-bias effects. The probe technique phenomenologically incorporates incoherent elastic and inelastic effects to the fully coherent case, mimicking a rich physical environment at trivial cost. We further identify environmentally induced mechanisms which generate an asymmetry in the current, manifested as a weak diode behavior. This rectifying behavior, found in two types of molecular junction models, is absent in the coherent-elastic limit and is only active in themore » case with incoherent-inelastic scattering. Our work illustrates that in the low bias-linear response regime, the commonly used “dephasing probe” (mimicking only elastic decoherence effects) operates nearly indistinguishably from a “voltage probe” (admitting inelastic-dissipative effects). However, these probes realize fundamentally distinct I-V characteristics at high biases, reflecting the central roles of dissipation and inelastic scattering processes on molecular electronic transport far-from-equilibrium.« less

A triple hybrid micropower generator with simultaneous multi-mode energy harvesting

NASA Astrophysics Data System (ADS)

Uluşan, H.; Chamanian, S.; Pathirana, W. P. M. R.; Zorlu, Ö.; Muhtaroğlu, A.; Külah, H.

2018-01-01

This study presents a triple hybrid energy harvesting system that combines harvested power from thermoelectric (TE), vibration-based electromagnetic (EM) and piezoelectric (PZT) harvesters into a single DC supply. A power management circuit is designed and implemented in 180 nm standard CMOS technology based on the distinct requirements of each harvester, and is terminated with a Schottky diode to avoid reverse current flow. The system topology hence supports simultaneous power generation and delivery from low and high frequency vibrations as well as temperature differences in the environment. The ultra-low DC voltage harvested from TE generator is boosted with a cross-coupled charge-pump driven by an LC oscillator with fully-integrated center-tapped differential inductors. The EM harvester output was rectified with a self-powered and low drop-out AC/DC doubler circuit. The PZT interface electronics benefits from peak-to-peak cycle of the harvested voltage through a negative voltage converter followed by synchronous power extraction and DC-to-DC conversion through internal switches, and an external inductor. The hybrid system was tested with a wearable in-house EM energy harvester placed wrist of a jogger, a commercial low volume PZT harvester, and DC supply as the TE generator output. The system generates more than 1.2 V output for load resistances higher than 50 kΩ, which corresponds to 24 μW to power wearable sensors. Simultaneous multi-mode operation achieves higher voltage and power compared to stand-alone harvesting circuits, and generates up to 110 μW of output power. This is the first hybrid harvester circuit that simultaneously extracts energy from three independent sources, and delivers a single DC output.

Coexpression of high-voltage-activated ion channels Kv3.4 and Cav1.2 in pioneer axons during pathfinding in the developing rat forebrain.

PubMed

Huang, Chia-Yi; Chu, Dachen; Hwang, Wei-Chao; Tsaur, Meei-Ling

2012-11-01

Precise axon pathfinding is crucial for establishment of the initial neuronal network during development. Pioneer axons navigate without the help of preexisting axons and pave the way for follower axons that project later. Voltage-gated ion channels make up the intrinsic electrical activity of pioneer axons and regulate axon pathfinding. To elucidate which channel molecules are present in pioneer axons, immunohistochemical analysis was performed to examine 14 voltage-gated ion channels (Kv1.1-Kv1.3, Kv3.1-Kv3.4, Kv4.3, Cav1.2, Cav1.3, Cav2.2, Nav1.2, Nav1.6, and Nav1.9) in nine axonal tracts in the developing rat forebrain, including the optic nerve, corpus callosum, corticofugal fibers, thalamocortical axons, lateral olfactory tract, hippocamposeptal projection, anterior commissure, hippocampal commissure, and medial longitudinal fasciculus. We found A-type K⁺ channel Kv3.4 in both pioneer axons and early follower axons and L-type Ca²⁺ channel Cav1.2 in pioneer axons and early and late follower axons. Spatially, Kv3.4 and Cav1.2 were colocalized with markers of pioneer neurons and pioneer axons, such as deleted in colorectal cancer (DCC), in most fiber tracts examined. Temporally, Kv3.4 and Cav1.2 were expressed abundantly in most fiber tracts during axon pathfinding but were downregulated beginning in synaptogenesis. By contrast, delayed rectifier Kv channels (e.g., Kv1.1) and Nav channels (e.g., Nav1.2) were absent from these fiber tracts (except for the corpus callosum) during pathfinding of pioneer axons. These data suggest that Kv3.4 and Cav1.2, two high-voltage-activated ion channels, may act together to control Ca²⁺ -dependent electrical activity of pioneer axons and play important roles during axon pathfinding. Copyright © 2012 Wiley Periodicals, Inc.

ClC-7 is a slowly voltage-gated 2Cl−/1H+-exchanger and requires Ostm1 for transport activity

PubMed Central

Leisle, Lilia; Ludwig, Carmen F; Wagner, Florian A; Jentsch, Thomas J; Stauber, Tobias

2011-01-01

Mutations in the ClC-7/Ostm1 ion transporter lead to osteopetrosis and lysosomal storage disease. Its lysosomal localization hitherto precluded detailed functional characterization. Using a mutated ClC-7 that reaches the plasma membrane, we now show that both the aminoterminus and transmembrane span of the Ostm1 β-subunit are required for ClC-7 Cl−/H+-exchange, whereas the Ostm1 transmembrane domain suffices for its ClC-7-dependent trafficking to lysosomes. ClC-7/Ostm1 currents were strongly outwardly rectifying owing to slow gating of ion exchange, which itself displays an intrinsically almost linear voltage dependence. Reversal potentials of tail currents revealed a 2Cl−/1H+-exchange stoichiometry. Several disease-causing CLCN7 mutations accelerated gating. Such mutations cluster to the second cytosolic cystathionine-β-synthase domain and potential contact sites at the transmembrane segment. Our work suggests that gating underlies the rectification of all endosomal/lysosomal CLCs and extends the concept of voltage gating beyond channels to ion exchangers. PMID:21527911

Development of software to improve AC power quality on large spacecraft

NASA Technical Reports Server (NTRS)

Kraft, L. Alan

1991-01-01

To insure the reliability of a 20 kHz, AC power system on spacecraft, it is essential to analyze its behavior under many adverse operating conditions. Some of these conditions include overloads, short circuits, switching surges, and harmonic distortions. Harmonic distortions can cause malfunctions in equipment that the power system is supplying, and during extreme distortions such as voltage resonance, it can cause equipment and insulation failures due to the extreme peak voltages. HARMFLO, a power flow computer program, which was capable of analyzing harmonic conditions on three phase, balanced, 60 Hz, AC power systems, was modified to analyze single phase, 20 kHz, AC power systems. Since almost all of the equipment used on spacecraft power systems is electrically different from equipment used on terrestrial power systems, it was also necessary to develop mathematical models for the equipment to be used on the spacecraft. The results are that (1) the harmonic power now has a model of a single phase, voltage controlled, full wave rectifier; and (2) HARMFLO was ported to the SUN workstation platform.

Atrial-selective K+ channel blockers: potential antiarrhythmic drugs in atrial fibrillation?

PubMed

Ravens, Ursula

2017-11-01

In the wake of demographic change in Western countries, atrial fibrillation has reached an epidemiological scale, yet current strategies for drug treatment of the arrhythmia lack sufficient efficacy and safety. In search of novel medications, atrial-selective drugs that specifically target atrial over other cardiac functions have been developed. Here, I will address drugs acting on potassium (K + ) channels that are either predominantly expressed in atria or possess electrophysiological properties distinct in atria from ventricles. These channels include the ultra-rapidly activating, delayed outward-rectifying Kv1.5 channel conducting I Kur , the acetylcholine-activated inward-rectifying Kir3.1/Kir3.4 channel conducting I K,ACh , the Ca 2+ -activated K + channels of small conductance (SK) conducting I SK , and the two-pore domain K + (K2P) channels (tandem of P domains, weak inward-rectifying K + channels (TWIK-1), TWIK-related acid-sensitive K + channels (TASK-1 and TASK-3)) that are responsible for voltage-independent background currents I TWIK-1 , I TASK-1 , and I TASK-3 . Direct drug effects on these channels are described and their putative value in treatment of atrial fibrillation is discussed. Although many potential drug targets have emerged in the process of unravelling details of the pathophysiological mechanisms responsible for atrial fibrillation, we do not know whether novel antiarrhythmic drugs will be more successful when modulating many targets or a single specific one. The answer to this riddle can only be solved in a clinical context.

Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure.

PubMed

Li, Yingtao; Yuan, Peng; Fu, Liping; Li, Rongrong; Gao, Xiaoping; Tao, Chunlan

2015-10-02

Diode-like volatile resistive switching as well as nonvolatile resistive switching behaviors in a Cu/ZrO₂/TiO₂/Ti stack are investigated. Depending on the current compliance during the electroforming process, either volatile resistive switching or nonvolatile resistive switching is observed. With a lower current compliance (<10 μA), the Cu/ZrO₂/TiO₂/Ti device exhibits diode-like volatile resistive switching with a rectifying ratio over 10(6). The permanent transition from volatile to nonvolatile resistive switching can be obtained by applying a higher current compliance of 100 μA. Furthermore, by using different reset voltages, the Cu/ZrO₂/TiO₂/Ti device exhibits multilevel memory characteristics with high uniformity. The coexistence of nonvolatile multilevel memory and diode-like volatile resistive switching behaviors in the same Cu/ZrO₂/TiO₂/Ti device opens areas of applications in high-density storage, logic circuits, neural networks, and passive crossbar memory selectors.

All-carbon sp-sp2 hybrid structures: Geometrical properties, current rectification, and current amplification

PubMed Central

Zhang, Zhenhua; Zhang, Junjun; Kwong, Gordon; Li, Ji; Fan, Zhiqiang; Deng, Xiaoqing; Tang, Guiping

2013-01-01

All-carbon sp-sp2 hybrid structures comprised of a zigzag-edged trigonal graphene (ZTG)and carbon chains are proposed and constructed as nanojunctions. It has been found that such simple hybrid structures possess very intriguing propertiesapp:addword:intriguing. The high-performance rectifying behaviors similar to macroscopic p-n junction diodes, such as a nearly linear positive-bias I-V curve (metallic behavior), a very small leakage current under negative bias (insulating behavior), a rather low threshold voltage, and a large bias region contributed to a rectification, can be predicted. And also, a transistor can be built by such a hybrid structure, which can show an extremely high current amplification. This is because a sp-hybrid carbon chain has a special electronic structure which can limit the electronic resonant tunneling of the ZTG to a unique and favorable situation. These results suggest that these hybrid structures might promise importantly potential applications for developing nano-scale integrated circuits. PMID:23999318

Identification of a pharmacological target for genioglossus reactivation throughout sleep.

PubMed

Grace, Kevin P; Hughes, Stuart W; Horner, Richard L

2014-01-01

Obstructive sleep apnea (OSA) is a significant public health problem caused by repeated episodes of upper airway closure that occur only during sleep. Attempts to treat OSA pharmacologically have been unsuccessful because there has not been identification of a target operating at cranial motor nuclei, blockade of which can reactivate pharyngeal muscle activity throughout sleep. Increasing potassium conductance is a common mechanism by which state-dependent neuromodulators reduce motoneuron excitability. Therefore, we aimed to determine if potassium channel blockade is an effective strategy to reactivate the pharyngeal musculature throughout sleep. In rats chronically instrumented for recording sleep-wake states and respiratory motor activities, we locally microperfused pharmacological agents into the hypoglossal motor pool to modulate potassium channels of three major classes: inwardly rectifying, two-pore domain, and voltage-gated. Microperfusion of the inwardly rectifying potassium channel blocker, barium, as well as the voltage-gated potassium channel blockers, tetraethylammonium and 4-aminopyridine, increased tonic and respiratory-related genioglossus activities throughout nonrapid eye movement (non-REM) and rapid eye movement (REM) sleep to 133-300% of levels present during baseline wakefulness. In contrast, microperfusion of methanandamide (TWIK-related acid-sensitive potassium [TASK] channel blocker/cannabinoid receptor agonist) activated genioglossus in wakefulness but not in sleep. These findings establish proof-of-principle that targeted blockade of certain potassium channels at the hypoglossal motor pool is an effective strategy for reversing upper airway hypotonia and causing sustained reactivation of genioglossus throughout nonrapid eye movement and rapid eye movement sleep. These findings identify an important new direction for translational approaches to the pharmacological treatment of obstructive sleep apnea.

In vivo RF powering for advanced biological research.

PubMed

Zimmerman, Mark D; Chaimanonart, Nattapon; Young, Darrin J

2006-01-01

An optimized remote powering architecture with a miniature and implantable RF power converter for an untethered small laboratory animal inside a cage is proposed. The proposed implantable device exhibits dimensions less than 6 mmx6 mmx1 mm, and a mass of 100 mg including a medical-grade silicon coating. The external system consists of a Class-E power amplifier driving a tuned 15 cmx25 cm external coil placed underneath the cage. The implant device is located in the animal's abdomen in a plane parallel to the external coil and utilizes inductive coupling to receive power from the external system. A half-wave rectifier rectifies the received AC voltage and passes the resulting DC current to a 2.5 kOmega resistor, which represents the loading of an implantable microsystem. An optimal operating point with respect to operating frequency and number of turns in each coil inductor was determined by analyzing the system efficiency. The determined optimal operating condition is based on a 4-turn external coil and a 20-turn internal coil operating at 4 MHz. With the Class-E amplifier consuming a constant power of 25 W, this operating condition is sufficient to supply a desired 3.2 V with 1.3 mA to the load over a cage size of 10 cmx20 cm with an animal tilting angle of up to 60 degrees, which is the worst case considered for the prototype design. A voltage regulator can be designed to regulate the received DC power to a stable supply for the bio-implant microsystem.

Action potentials in primary osteoblasts and in the MG-63 osteoblast-like cell line.

PubMed

Pangalos, Maria; Bintig, Willem; Schlingmann, Barbara; Feyerabend, Frank; Witte, Frank; Begandt, Daniela; Heisterkamp, Alexander; Ngezahayo, Anaclet

2011-06-01

Whole-cell patch-clamp analysis revealed a resting membrane potential of -60 mV in primary osteoblasts and in the MG-63 osteoblast-like cells. Depolarization-induced action potentials were characterized by duration of 60 ms, a minimal peak-to-peak distance of 180 ms, a threshold value of -20 mV and a repolarization between the spikes to -45 mV. Expressed channels were characterized by application of voltage pulses between -150 mV and 90 mV in 10 mV steps, from a holding potential of -40 mV. Voltages below -60 mV induced an inward current. Depolarizing voltages above -30 mV evoked two currents: (a) a fast activated and inactivated inward current at voltages between -30 and 30 mV, and (b) a delayed-activated outward current that was induced by voltages above -30 mV. Electrophysiological and pharmacological parameters indicated that hyperpolarization activated strongly rectifying K(+) (K(ir)) channels, whereas depolarization activated tetrodotoxin sensitive voltage gated Na(+) (Na(v)) channels as well as delayed, slowly activated, non-inactivating, and tetraethylammonium sensitive voltage gated K(+) (K(v)) channels. In addition, RT-PCR showed expression of Na(v)1.3, Na(v)1.4, Na(v)1.5, Na(v)1.6, Na(v)1.7, and K(ir)2.1, K(ir)2.3, and K(ir)2.4 as well as K(v)2.1. We conclude that osteoblasts express channels that allow firing of action potentials.

Analysis of series resonant converter with series-parallel connection

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren; Huang, Chien-Lan

2011-02-01

In this study, a parallel inductor-inductor-capacitor (LLC) resonant converter series-connected on the primary side and parallel-connected on the secondary side is presented for server power supply systems. Based on series resonant behaviour, the power metal-oxide-semiconductor field-effect transistors are turned on at zero voltage switching and the rectifier diodes are turned off at zero current switching. Thus, the switching losses on the power semiconductors are reduced. In the proposed converter, the primary windings of the two LLC converters are connected in series. Thus, the two converters have the same primary currents to ensure that they can supply the balance load current. On the output side, two LLC converters are connected in parallel to share the load current and to reduce the current stress on the secondary windings and the rectifier diodes. In this article, the principle of operation, steady-state analysis and design considerations of the proposed converter are provided and discussed. Experiments with a laboratory prototype with a 24 V/21 A output for server power supply were performed to verify the effectiveness of the proposed converter.

Key concepts behind forming-free resistive switching incorporated with rectifying transport properties

PubMed Central

Shuai, Yao; Ou, Xin; Luo, Wenbo; Mücklich, Arndt; Bürger, Danilo; Zhou, Shengqiang; Wu, Chuangui; Chen, Yuanfu; Zhang, Wanli; Helm, Manfred; Mikolajick, Thomas; Schmidt, Oliver G.; Schmidt, Heidemarie

2013-01-01

This work reports the effect of Ti diffusion on the bipolar resistive switching in Au/BiFeO3/Pt/Ti capacitor-like structures. Polycrystalline BiFeO3 thin films are deposited by pulsed laser deposition at different temperatures on Pt/Ti/SiO2/Si substrates. From the energy filtered transmission electron microscopy and Rutherford backscattering spectrometry it is observed that Ti diffusion occurs if the deposition temperature is above 600°C. The current-voltage (I–V) curves indicate that resistive switching can only be achieved in Au/BiFeO3/Pt/Ti capacitor-like structures where this Ti diffusion occurs. The effect of Ti diffusion is confirmed by the BiFeO3 thin films deposited on Pt/sapphire and Pt/Ti/sapphire substrates. The resistive switching needs no electroforming process, and is incorporated with rectifying properties which is potentially useful to suppress the sneak current in a crossbar architecture. Those specific features open a promising alternative concept for nonvolatile memory devices as well as for other memristive devices like synapses in neuromorphic circuits. PMID:23860408

Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers.

PubMed

Li, Dong; Chen, Mingyuan; Zong, Qijun; Zhang, Zengxing

2017-10-11

The Schottky junction is an important unit in electronics and optoelectronics. However, its properties greatly degrade with device miniaturization. The fast development of circuits has fueled a rapid growth in the study of two-dimensional (2D) crystals, which may lead to breakthroughs in the semiconductor industry. Here we report a floating-gate manipulated nonvolatile ambipolar Schottky junction memory from stacked all-2D layers of graphene-BP/h-BN/graphene (BP, black phosphorus; h-BN, hexagonal boron nitride) in a designed floating-gate field-effect Schottky barrier transistor configuration. By manipulating the voltage pulse applied to the control gate, the device exhibits ambipolar characteristics and can be tuned to act as graphene-p-BP or graphene-n-BP junctions with reverse rectification behavior. Moreover, the junction exhibits good storability properties of more than 10 years and is also programmable. On the basis of these characteristics, we further demonstrate the application of the device to dual-mode nonvolatile Schottky junction memories, memory inverter circuits, and logic rectifiers.

Complex expression and localization of inactivating Kv channels in cultured hippocampal astrocytes.

PubMed

Bekar, Lane K; Loewen, Matthew E; Cao, Kun; Sun, Xianfeng; Leis, Jerome; Wang, Rui; Forsyth, George W; Walz, Wolfgang

2005-03-01

Voltage-gated potassium channels are well established as critical for setting action potential frequency, membrane potential, and neurotransmitter release in neurons. However, their role in the "nonexcitable" glial cell type is yet to be fully understood. We used whole cell current kinetics, pharmacology, immunocytochemistry, and RT-PCR to characterize A-type current in hippocampal astrocyte cultures to better understand its function. Pharmacological analysis suggests that approximately 70, 10, and <5% of total A current is associated with Kv4, Kv3, and Kv1 channels, respectively. In addition, pharmacology and kinetics provide evidence for a significant contribution of KChIP accessory proteins to astrocytic A-channel composition. Localization of the Shaw Kv3.4 channel to astrocytic processes and the Shal Kv4.3 channel to soma suggest that these channels serve a specific function. Given this complex A-type channel expression pattern, we assessed the role of A currents in membrane voltage oscillations in response to current injections. Although TEA-sensitive delayed-rectifying currents are involved in the extent of repolarization, 4-AP-sensitive A currents serve to increase the rate. As in neurons, this effect may enable astrocytes to respond rapidly to high-frequency synaptic events. Our results indicate that hippocampal astrocytes in vitro express multiple A-type Kv channel alpha-subunits with accessory, possibly Ca(2+)-sensitive, cytoplasmic subunits that appear to be specifically localized to subcellular membrane compartments. Function of these channels remains to be determined in a physiological setting. However, this study suggests that they enable astrocytes to respond rapidly with membrane voltage oscillations to high-frequency incoming signals, possibly synchronizing astrocyte function to neuronal activity.

Remotely powered distributed microfluidic pumps and mixers based on miniature diodes.

PubMed

Chang, Suk Tai; Beaumont, Erin; Petsev, Dimiter N; Velev, Orlin D

2008-01-01

We demonstrate new principles of microfluidic pumping and mixing by electronic components integrated into a microfluidic chip. The miniature diodes embedded into the microchannel walls rectify the voltage induced between their electrodes from an external alternating electric field. The resulting electroosmotic flows, developed in the vicinity of the diode surfaces, were utilized for pumping or mixing of the fluid in the microfluidic channel. The flow velocity of liquid pumped by the diodes facing in the same direction linearly increased with the magnitude of the applied voltage and the pumping direction could be controlled by the pH of the solutions. The transverse flow driven by the localized electroosmotic flux between diodes oriented oppositely on the microchannel was used in microfluidic mixers. The experimental results were interpreted by numerical simulations of the electrohydrodynamic flows. The techniques may be used in novel actively controlled microfluidic-electronic chips.

Ferroelectric Schottky diode behavior from a SrRuO3-Pb(Zr0.2Ti0.8)O3-Ta structure

NASA Astrophysics Data System (ADS)

Pintilie, Lucian; Stancu, Viorica; Trupina, L.; Pintilie, Ioana

2010-08-01

A single ferroelectric Schottky diode was obtained on a SrRuO3-Pb(Zr0.2Ti0.8)O3-Ta (SRO-PZT20/80-Ta) structure in which the SRO-PZT20/80 interface is the rectifying contact and the PZT20/80-Ta interface behaves as a quasiohmic contact. Both the capacitance-voltage (C-V) and the current-voltage (I-V) characteristics show the memory effect due to the ferroelectric polarization. However, retention studies had revealed that only the “down” orientation of ferroelectric polarization is stable in time (polarization oriented from top to bottom contact). The analysis of the experimental results suggests that the PZT20/80 is n type and that the stable orientation of polarization is related to the presence of a depletion region at the SRO-PZT20/80 Schottky interface.

Wideband energy harvesting for piezoelectric devices with linear resonant behavior.

PubMed

Luo, Cheng; Hofmann, Heath F

2011-07-01

In this paper, an active energy harvesting technique for a spring-mass-damper mechanical resonator with piezoelectric electromechanical coupling is investigated. This technique applies a square-wave voltage to the terminals of the device at the same frequency as the mechanical excitation. By controlling the magnitude and phase angle of this voltage, an effective impedance matching can be achieved which maximizes the amount of power extracted from the device. Theoretically, the harvested power can be the maximum possible value, even at off-resonance frequencies. However, in actual implementation, the efficiency of the power electronic circuit limits the amount of power harvested. A power electronic full-bridge converter is built to implement the technique. Experimental results show that the active technique can increase the effective bandwidth by a factor of more than 2, and harvests significantly higher power than rectifier-based circuits at off-resonance frequencies.

The rectification of mono- and bivalent ions in single conical nanopores

NASA Astrophysics Data System (ADS)

Wei, Junzhe; Du, Guanghua; Guo, Jinlong; Li, Yaning; Liu, Wenjing; Yao, Huijun; Zhao, Jing; Wu, Ruqun; Chen, Hao; Ponomarov, Artem

2017-08-01

The polyethylene terephthalate (PET) films were irradiated with single 6.9 MeV/u 58Ni19+ ions at the Lanzhou Interdisciplinary Heavy Ion Microbeam (LIHIM), and single conical nanopores were produced by asymmetric chemical etching of the latent ion tracks. Then, the current-voltage (I-V) characteristic was measured in LiCl, NaCl, KCl, MgCl2, and CaCl2 solution at different concentrations to study the transport properties of different cations in the single conical nanopores respectively. The measured I-V data showed that the conical nanopores have rectified transportation of these cations at the applied voltage of between +2 V and -2 V. The rectification coefficient γ of the mono- and bivalent ions was determined in their solution of 0.0001-1 M measured at 1 V, the result showed that the rectification coefficient is dependent on the valence of the ions and the electrolyte solution.

Effects of Nb doping level on the electronic transport, photoelectric effect and magnetoresistance across La0.5Ca0.5MnO3/Nb:SrTiO3 junctions

NASA Astrophysics Data System (ADS)

Wang, J. F.; Jiang, Y. C.; Chen, M. G.; Gao, J.

2013-12-01

Heterojunctions composed of La0.5Ca0.5MnO3 and Nb doped SrTiO3 were fabricated, and the effects of the Nb doping level on their electronic transport, photoelectric effect, and magnetoresistance were investigated. A lower doping concentration of Nb led to better rectifying properties and higher open circuit voltages. The I-V curves for La0.5Ca0.5MnO3/0.7 wt. % Nb-SrTiO3 showed a negligible response to magnetic fields for all temperatures, whereas La0.5Ca0.5MnO3/0.05 wt. % Nb-SrTiO3 exhibited distinct magnetoresistance, which depended on both the bias voltage and temperature. These results are discussed with the assistance of conventional semiconductor theories.

Enhanced photoluminescence and heterojunction characteristics of pulsed laser deposited ZnO nanostructures

NASA Astrophysics Data System (ADS)

Mannam, Ramanjaneyulu; Kumar, E. Senthil; Priyadarshini, D. M.; Bellarmine, F.; DasGupta, Nandita; Ramachandra Rao, M. S.

2017-10-01

We report on the growth of ZnO nanostructures in different gas ambient (Ar and N2) using pulsed laser deposition technique. Despite the similar growth temperature, use of N2 ambient gas resulted in well-aligned nanorods with flat surface at the tip, whereas, nanorods grown with Ar ambient exhibited tapered tips. The Nanorods grown under N2 ambient exhibited additional Raman modes corresponding to N induced zinc interstitials. The nanorods are c-axis oriented and highly epitaxial in nature. Photoluminescence spectroscopy reveals that the UV emission can be significantly enhanced by 10 times for the nanorods grown under Ar ambient. The enhanced UV emission is attributed to the reduction in polarization electric field along the c-axis. n-ZnO nanorods/p-Si heterojunction showed rectifying I-V characteristics with a turn of voltage of 3.4 V.

Multi-functional properties of CaCu3Ti4O12 thin films

NASA Astrophysics Data System (ADS)

Felix, A. A.; Rupp, J. L. M.; Varela, J. A.; Orlandi, M. O.

2012-09-01

In this work, electric transport properties of CaCu3Ti4O12 (CCTO) thin films were investigated for resistive switching, rectifying and gas sensor applications. Single phase CCTO thin films were produced by polymeric precursor method (PPM) on different substrates and their electrical properties were studied. Films produced on LNO/Si substrates have symmetrical non-ohmic current-voltage characteristics, while films deposited on Pt/Si substrates have a highly asymmetrical non-ohmic behavior which is related to a metal-semiconductor junction formed at the CCTO/Pt interface. In addition, results confirm that CCTO has a resistive switching response which is enhanced by Schottky contacts. Sensor response tests revealed that CCTO films are sensitive to oxygen gas and exhibit n-type conductivity. These results demonstrate the versatility of CCTO thin film prepared by the PPM method for gas atmosphere or bias dependent resistance applications.

[K+ channels and lung epithelial physiology].

PubMed

Bardou, Olivier; Trinh, Nguyen Thu Ngan; Brochiero, Emmanuelle

2009-04-01

Transcripts of more than 30 different K(+) channels have been detected in the respiratory epithelium lining airways and alveoli. These channels belong to the 3 main classes of K(+) channels, i.e. i) voltage-dependent or calcium-activated, 6 transmembrane segments (TM), ii) 2-pores 4-TM and iii) inward-rectified 2-TM channels. The physiological and functional significance of this high molecular diversity of lung epithelial K(+) channels is not well understood. Surprisingly, relatively few studies are focused on K(+) channel function in lung epithelial physiology. Nevertheless, several studies have shown that KvLQT1, KCa and K(ATP) K(+) channels play a crucial role in ion and fluid transport, contributing to the control of airway and alveolar surface liquid composition and volume. K(+) channels are involved in other key functions, such as O(2) sensing or the capacity of the respiratory epithelia to repair after injury. This mini-review aims to discuss potential functions of lung K(+) channels.

Spin valve-like magnetic tunnel diode exhibiting giant positive junction magnetoresistance at low temperature in Co2MnSi/SiO2/p-Si heterostructure

NASA Astrophysics Data System (ADS)

Maji, Nilay; Kar, Uddipta; Nath, T. K.

2018-02-01

The rectifying magnetic tunnel diode has been fabricated by growing Co2MnSi (CMS) Heusler alloy film carefully on a properly cleaned p-Si (100) substrate with the help of electron beam physical vapor deposition technique and its structural, electrical and magnetic properties have been experimentally investigated in details. The electronic- and magneto-transport properties at various isothermal conditions have been studied in the temperature regime of 78-300 K. The current-voltage ( I- V) characteristics of the junction show an excellent rectifying magnetic tunnel diode-like behavior throughout that temperature regime. The current ( I) across the junction has been found to decrease with the application of a magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. When forward dc bias is applied to the heterostructure, the I- V characteristics are highly influenced on turning on the field B = 0.5 T at 78 K, and the forward current reduces abruptly (99.2% current reduction at 3 V) which is nearly equal to the order of the magnitude of the current observed in the reverse bias. Hence, our Co2MnSi/SiO2/p-Si heterostructure can perform in off ( I off)/on ( I on) states with the application of non-zero/zero magnetic field like a spin valve at low temperature (78 K).

Changes in Inward Rectifier K+ Channels in Hepatic Stellate Cells During Primary Culture

PubMed Central

Lee, Dong Hyeon; Kong, In Deok; Lee, Joong-Woo

2008-01-01

Purpose This study examined the expression and function of inward rectifier K+ channels in cultured rat hepatic stellate cells (HSC). Materials and Methods The expression of inward rectifier K+ channels was measured using real-time RT-PCR, and electrophysiological properties were determined using the gramicidin-perforated patch-clamp technique. Results The dominant inward rectifier K+ channel subtypes were Kir2.1 and Kir6.1. These dominant K+ channel subtypes decreased significantly during the primary culture throughout activation process. HSC can be classified into two subgroups: one with an inward-rectifying K+ current (type 1) and the other without (type 2). The inward current was blocked by Ba2+ (100 µM) and enhanced by high K+ (140 mM), more prominently in type 1 HSC. There was a correlation between the amplitude of the Ba2+-sensitive current and the membrane potential. In addition, Ba2+ (300 µM) depolarized the membrane potential. After the culture period, the amplitude of the inward current decreased and the membrane potential became depolarized. Conclusion HSC express inward rectifier K+ channels, which physiologically regulate membrane potential and decrease during the activation process. These results will potentially help determine properties of the inward rectifier K+ channels in HSC as well as their roles in the activation process. PMID:18581597

76 FR 37660 - Amendment of the Schedule of Application Fees Set Forth In Sections 1.1102 Through 1.1109 of the...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-06-28

.... This clarification is intended to rectify a possible inconsistency throughout the Commission's rules... fee need not accompany a high bidder's long-form application, on the other. To rectify this...

A unique power supply for the PEP II klystron at SLAC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cassel, R.; Nguyen, M.N.

1997-07-01

Each of the eight 1.2 MW RF klystrons for the PEP-II storage rings require a 2.5 MVA DC power supply of 83 Kv at 23 amps. The design for the supply was base on three factors, low cost, small size to fit existing substation pads, and good protection against damage to the klystron including klystron gun arcs. The supply uses a 12 pulse 12.5 KV primary thyristor star point controller with primary filter inductor to provide rapid voltage control, good voltage regulation, and fast turn off during klystron tube faults. The supply also uses a unique secondary rectifier, filter capacitormore » configuration to minimize the energy available under a klystron fault. The voltage control is from 0--90 KV with a regulation of < 0.1% and voltage ripple of < 1% P-P, (< 0.2% RMS) above 60 KV. The supply utilizes a thyristor crowbar, which under a klystron tube arc limits the energy in the klystron arc to < 5 joules. If the thyristor crowbar is disabled the energy supplied is < 40 joules into the arc. The size of the supply was reduced small enough to fit the existing PEP transformer yard pads. The cost of the power supply was < $140 per KVA.« less

Synthesis and Characterization of Methylammonium Lead Iodide Perovskite and its Application in Planar Hetero-junction Devices

NASA Astrophysics Data System (ADS)

Upadhyaya, Aditi; Mohan Singh Negi, Chandra; Yadav, Anjali; Gupta, Saral K.; Singh Verma, Ajay

2018-06-01

The present paper reports on the synthesis and characterization of methylammonium lead iodide perovskite thin film and its applications in heterojunction devices. Perovskite thin films were deposited by a simple spin-coating method using a precursor solution including methyl ammonium iodide and lead iodide onto a glass substrate. The surface morphology study via field emission scanning electron microscopy of the perovskite thin film shows complete surface coverage on glass substrate with negligible pin-holes. UV–visible spectroscopy study revealed a broad absorption range and the exhibition of a band-gap of 1.6 eV. The dark current-voltage (I–V) characteristics of all the devices under study show rectifying behaviour similar to the Schottky diode. Various device parameters such as ideality factor and barrier height are extracted from the I–V curve. At low voltages the devices exhibit Ohmic behaviour, trap free space charge limited conduction governs the charge transport at an intermediate voltage range, while at much higher voltages the devices show trap controlled space charge limited conduction. Furthermore, impedance spectroscopy measurements enable us to extract the various internal parameters of the devices. Correlations between these parameters and I–V characteristics are discussed. The different capacitive process arising in the devices was discussed using the capacitance versus frequency curve.

Optical gas monitor

DOEpatents

Wu, Sheng; Deev, Andrei; Palm, Steve L.; Tang, Yongchun; Goddard, William A.

2010-11-30

A frequency modulated spectroscopy system, including a photo-detector, a band-pass filter to filter the output of the photo-detector, and a rectifier to demodulate. The band-pass filter has a relatively high Q factor. With the high Q factor band-pass filter and rectifier, a reference sinusoid is not required for demodulation, resulting in phase-insensitive spectroscopy. Other embodiments are described and claimed.

PI Passivity-Based Control for Maximum Power Extraction of a Wind Energy System with Guaranteed Stability Properties

NASA Astrophysics Data System (ADS)

Cisneros, Rafael; Gao, Rui; Ortega, Romeo; Husain, Iqbal

2016-10-01

The present paper proposes a maximum power extraction control for a wind system consisting of a turbine, a permanent magnet synchronous generator, a rectifier, a load and one constant voltage source, which is used to form the DC bus. We propose a linear PI controller, based on passivity, whose stability is guaranteed under practically reasonable assumptions. PI structures are widely accepted in practice as they are easier to tune and simpler than other existing model-based methods. Real switching based simulations have been performed to assess the performance of the proposed controller.

Silicon-controlled-rectifier square-wave inverter with protection against commutation failure

NASA Technical Reports Server (NTRS)

Birchenough, A. G.

1971-01-01

The square-wave SCR inverter that was designed, built, and tested includes a circuit to turn off the inverter in case of commutation failure. The basic power stage is a complementary impulse-commutated parallel inverter consisting of only six components. The 400-watt breadboard was tested while operating at + or - 28 volts, and it had a peak efficiency of 95.5 percent at 60 hertz and 91.7 percent at 400 hertz. The voltage regulation for a fixed input was 3 percent at 60 hertz. An analysis of the operation and design information is included.