Rare-Earth Doped Gallium Nitride (GaN)- An Innovative Path Toward Area-scalable Solid-state High Energy Lasers Without Thermal Distortion

DTIC Science & Technology

2009-04-01

technique and its efficiency , the gain medium itself is the bottleneck for non-distortive heat removal—due to the low thermal conductivity of known gain...photoluminescence (PL), electroluminescence (EL), and/or cathodoluminescence (CL) (2,3). As the RE dopant, Nd is an excellent candidate due to its success...highest level of laser efficiency due to the pump and signal mode confinement within a crystalline-guided structure). The successful implementation of

Ka-Band Wide-Bandgap Solid-State Power Amplifier: Hardware Validation

NASA Technical Reports Server (NTRS)

Epp, L.; Khan, P.; Silva, A.

2005-01-01

Motivated by recent advances in wide-bandgap (WBG) gallium nitride (GaN) semiconductor technology, there is considerable interest in developing efficient solid-state power amplifiers (SSPAs) as an alternative to the traveling-wave tube amplifier (TWTA) for space applications. This article documents proof-of-concept hardware used to validate power-combining technologies that may enable a 120-W, 40 percent power-added efficiency (PAE) SSPA. Results in previous articles [1-3] indicate that architectures based on at least three power combiner designs are likely to enable the target SSPA. Previous architecture performance analyses and estimates indicate that the proposed architectures can power combine 16 to 32 individual monolithic microwave integrated circuits (MMICs) with >80 percent combining efficiency. This combining efficiency would correspond to MMIC requirements of 5- to 10-W output power and >48 percent PAE. In order to validate the performance estimates of the three proposed architectures, measurements of proof-of-concept hardware are reported here.

Test study of boron nitride as a new detector material for dosimetry in high-energy photon beams.

PubMed

Poppinga, D; Halbur, J; Lemmer, S; Delfs, B; Harder, D; Looe, H K; Poppe, B

2017-09-05

The aim of this test study is to check whether boron nitride (BN) might be applied as a detector material in high-energy photon-beam dosimetry. Boron nitride exists in various crystalline forms. Hexagonal boron nitride (h-BN) possesses high mobility of the electrons and holes as well as a high volume resistivity, so that ionizing radiation in the clinical range of the dose rate can be expected to produce a measurable electrical current at low background current. Due to the low atomic numbers of its constituents, its density (2.0 g cm -3 ) similar to silicon and its commercial availability, h-BN appears as possibly suitable for the dosimetry of ionizing radiation. Five h-BN plates were contacted to triaxial cables, and the detector current was measured in a solid-state ionization chamber circuit at an applied voltage of 50 V. Basic dosimetric properties such as formation by pre-irradiation, sensitivity, reproducibility, linearity and temporal resolution were measured with 6 MV photon irradiation. Depth dose curves at quadratic field sizes of 10 cm and 40 cm were measured and compared to ionization chamber measurements. After a pre-irradiation with 6 Gy, the devices show a stable current signal at a given dose rate. The current-voltage characteristic up to 400 V shows an increase in the collection efficiency with the voltage. The time-resolved detector current behavior during beam interrupts is comparable to diamond material, and the background current is negligible. The measured percentage depth dose curves at 10 cm  ×  10 cm field size agreed with the results of ionization chamber measurements within  ±2%. This is a first study of boron nitride as a detector material for high-energy photon radiation. By current measurements on solid ionization chambers made from boron nitride chips we could demonstrate that boron nitride is in principle suitable as a detector material for high-energy photon-beam dosimetry.

Test study of boron nitride as a new detector material for dosimetry in high-energy photon beams

NASA Astrophysics Data System (ADS)

Poppinga, D.; Halbur, J.; Lemmer, S.; Delfs, B.; Harder, D.; Looe, H. K.; Poppe, B.

2017-09-01

The aim of this test study is to check whether boron nitride (BN) might be applied as a detector material in high-energy photon-beam dosimetry. Boron nitride exists in various crystalline forms. Hexagonal boron nitride (h-BN) possesses high mobility of the electrons and holes as well as a high volume resistivity, so that ionizing radiation in the clinical range of the dose rate can be expected to produce a measurable electrical current at low background current. Due to the low atomic numbers of its constituents, its density (2.0 g cm-3) similar to silicon and its commercial availability, h-BN appears as possibly suitable for the dosimetry of ionizing radiation. Five h-BN plates were contacted to triaxial cables, and the detector current was measured in a solid-state ionization chamber circuit at an applied voltage of 50 V. Basic dosimetric properties such as formation by pre-irradiation, sensitivity, reproducibility, linearity and temporal resolution were measured with 6 MV photon irradiation. Depth dose curves at quadratic field sizes of 10 cm and 40 cm were measured and compared to ionization chamber measurements. After a pre-irradiation with 6 Gy, the devices show a stable current signal at a given dose rate. The current-voltage characteristic up to 400 V shows an increase in the collection efficiency with the voltage. The time-resolved detector current behavior during beam interrupts is comparable to diamond material, and the background current is negligible. The measured percentage depth dose curves at 10 cm  ×  10 cm field size agreed with the results of ionization chamber measurements within  ±2%. This is a first study of boron nitride as a detector material for high-energy photon radiation. By current measurements on solid ionization chambers made from boron nitride chips we could demonstrate that boron nitride is in principle suitable as a detector material for high-energy photon-beam dosimetry.

Improvements to III-nitride light-emitting diodes through characterization and material growth

NASA Astrophysics Data System (ADS)

Getty, Amorette Rose Klug

A variety of experiments were conducted to improve or aid the improvement of the efficiency of III-nitride light-emitting diodes (LEDs), which are a critical area of research for multiple applications, including high-efficiency solid state lighting. To enhance the light extraction in ultraviolet LEDs grown on SiC substrates, a distributed Bragg reflector (DBR) optimized for operation in the range from 250 to 280 nm has been developed using MBE growth techniques. The best devices had a peak reflectivity of 80% with 19.5 periods, which is acceptable for the intended application. DBR surfaces were sufficiently smooth for subsequent epitaxy of the LED device. During the course of this work, pros and cons of AlGaN growth techniques, including analog versus digital alloying, were examined. This work highlighted a need for more accurate values of the refractive index of high-Al-content AlxGa1-xNin the UV wavelength range. We present refractive index results for a wide variety of materials pertinent to the fabrication of optical III-nitride devices. Characterization was done using Variable-Angle Spectroscopic Ellipsometry. The three binary nitrides, and all three ternaries, have been characterized to a greater or lesser extent depending on material compositions available. Semi-transparent p-contact materials and other thin metals for reflecting contacts have been examined to allow optimization of deposition conditions and to allow highly accurate modeling of the behavior of light within these devices. Standard substrate materials have also been characterized for completeness and as an indicator of the accuracy of our modeling technique. We have demonstrated a new technique for estimating the internal quantum efficiency (IQE) of nitride light-emitting diodes. This method is advantageous over the standard low-temperature photoluminescence-based method of estimating IQE, as the new method is conducted under the same conditions as normal device operation. We have developed processing techniques and have characterized patternable absorbing materials which eliminate scattered light within the device, allowing an accurate simulation of the device extraction efficiency. This efficiency, with measurements of the input current and optical output power, allow a straightforward calculation of the IQE. Two sets of devices were measured, one of material grown in-house, with a rough p-GaN surface, and one of commercial LED material, with smooth interfaces and very high internal quantum efficiency.

High-Modulation-Speed LEDs Based on III-Nitride

NASA Astrophysics Data System (ADS)

Chen, Hong

III-nitride InGaN light-emitting diodes (LEDs) enable wide range of applications in solid-state lighting, full-color displays, and high-speed visible-light communication. Conventional InGaN quantum well LEDs grown on polar c-plane substrate suffer from quantum confined Stark effect due to the large internal polarization-related fields, leading to a reduced radiative recombination rate and device efficiency, which limits the performance of InGaN LEDs in high-speed communication applications. To circumvent these negative effects, non-trivial-cavity designs such as flip-chip LEDs, metallic grating coated LEDs are proposed. This oral defense will show the works on the high-modulation-speed LEDs from basic ideas to applications. Fundamental principles such as rate equations for LEDs/laser diodes (LDs), plasmonic effects, Purcell effects will be briefly introduced. For applications, the modal properties of flip-chip LEDs are solved by implementing finite difference method in order to study the modulation response. The emission properties of highly polarized InGaN LEDs coated by metallic gratings are also investigated by finite difference time domain method.

Visible light photoreactivity from Carbon nitride bandgap states in Nb and Ti oxides

NASA Astrophysics Data System (ADS)

Lee, Hosik; Ohno, Takahisa; Icnsee Team

2011-03-01

Lamellar niobic and titanic solid acids (HNb3O8 , H2Ti4O9) are photocatalysts which can be used for environmental cleanup application and hydrogen production through water splitting. To increase their efficiency, bandgap adjustment which can induce visible light reactivity in addition to ultraviolet light has been one of hot issue in this kinds of photo-catalytic materials. Nitrogen-doping was one of the direction and its microscopic structures are disputed in this decade. In this work, we calculate the layered niobic and titanic solid acids structure and bandgap. Bandgap reduction by carbon nitride absorption are observed computationally. It is originated from localized nitrogen state which is consistent with previous experiments.

Broadband enhancement of single photon emission and polarization dependent coupling in silicon nitride waveguides.

PubMed

Bisschop, Suzanne; Guille, Antoine; Van Thourhout, Dries; Hens, Zeger; Brainis, Edouard

2015-06-01

Single-photon (SP) sources are important for a number of optical quantum information processing applications. We study the possibility to integrate triggered solid-state SP emitters directly on a photonic chip. A major challenge consists in efficiently extracting their emission into a single guided mode. Using 3D finite-difference time-domain simulations, we investigate the SP emission from dipole-like nanometer-sized inclusions embedded into different silicon nitride (SiNx) photonic nanowire waveguide designs. We elucidate the effect of the geometry on the emission lifetime and the polarization of the emitted SP. The results show that highly efficient and polarized SP sources can be realized using suspended SiNx slot-waveguides. Combining this with the well-established CMOS-compatible processing technology, fully integrated and complex optical circuits for quantum optics experiments can be developed.

Enhanced thermaly managed packaging for III-nitride light emitters

NASA Astrophysics Data System (ADS)

Kudsieh, Nicolas

In this Dissertation our work on `enhanced thermally managed packaging of high power semiconductor light sources for solid state lighting (SSL)' is presented. The motivation of this research and development is to design thermally high stable cost-efficient packaging of single and multi-chip arrays of III-nitrides wide bandgap semiconductor light sources through mathematical modeling and simulations. Major issues linked with this technology are device overheating which causes serious degradation in their illumination intensity and decrease in the lifetime. In the introduction the basics of III-nitrides WBG semiconductor light emitters are presented along with necessary thermal management of high power cingulated and multi-chip LEDs and laser diodes. This work starts at chip level followed by its extension to fully packaged lighting modules and devices. Different III-nitride structures of multi-quantum well InGaN/GaN and AlGaN/GaN based LEDs and LDs were analyzed using advanced modeling and simulation for different packaging designs and high thermal conductivity materials. Study started with basic surface mounted devices using conventional packaging strategies and was concluded with the latest thermal management of chip-on-plate (COP) method. Newly discovered high thermal conductivity materials have also been incorporated for this work. Our study also presents the new approach of 2D heat spreaders using such materials for SSL and micro LED array packaging. Most of the work has been presented in international conferences proceedings and peer review journals. Some of the latest work has also been submitted to well reputed international journals which are currently been reviewed for publication. .

Gallium Nitride Nanowires and Heterostructures: Toward Color-Tunable and White-Light Sources.

PubMed

Kuykendall, Tevye R; Schwartzberg, Adam M; Aloni, Shaul

2015-10-14

Gallium-nitride-based light-emitting diodes have enabled the commercialization of efficient solid-state lighting devices. Nonplanar nanomaterial architectures, such as nanowires and nanowire-based heterostructures, have the potential to significantly improve the performance of light-emitting devices through defect reduction, strain relaxation, and increased junction area. In addition, relaxation of internal strain caused by indium incorporation will facilitate pushing the emission wavelength into the red. This could eliminate inefficient phosphor conversion and enable color-tunable emission or white-light emission by combining blue, green, and red sources. Utilizing the waveguiding modes of the individual nanowires will further enhance light emission, and the properties of photonic structures formed by nanowire arrays can be implemented to improve light extraction. Recent advances in synthetic methods leading to better control over GaN and InGaN nanowire synthesis are described along with new concept devices leading to efficient white-light emission. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High temperature resistant cermet and ceramic compositions

NASA Technical Reports Server (NTRS)

Phillips, W. M. (Inventor)

1978-01-01

Cermet compositions having high temperature oxidation resistance, high hardness and high abrasion and wear resistance, and particularly adapted for production of high temperature resistant cermet insulator bodies are presented. The compositions are comprised of a sintered body of particles of a high temperature resistant metal or metal alloy, preferably molybdenum or tungsten particles, dispersed in and bonded to a solid solution formed of aluminum oxide and silicon nitride, and particularly a ternary solid solution formed of a mixture of aluminum oxide, silicon nitride and aluminum nitride. Also disclosed are novel ceramic compositions comprising a sintered solid solution of aluminum oxide, silicon nitride and aluminum nitride.

Power Amplifier Module with 734-mW Continuous Wave Output Power

NASA Technical Reports Server (NTRS)

Fung, King Man; Samoska, Lorene A.; Kangaslahti, Pekka P.; Lamgrigtsen, Bjorn H.; Goldsmith, Paul F.; Lin, Robert H.; Soria, Mary M.; Cooperrider, Joelle T.; Micovic, Moroslav; Kurdoghlian, Ara

2010-01-01

Research findings were reported from an investigation of new gallium nitride (GaN) monolithic millimeter-wave integrated circuit (MMIC) power amplifiers (PAs) targeting the highest output power and the highest efficiency for class-A operation in W-band (75-110 GHz). W-band PAs are a major component of many frequency multiplied submillimeter-wave LO signal sources. For spectrometer arrays, substantial W-band power is required due to the passive lossy frequency multipliers-to generate higher frequency signals in nonlinear Schottky diode-based LO sources. By advancing PA technology, the LO system performance can be increased with possible cost reductions compared to current GaAs PAs. High-power, high-efficiency GaN PAs are cross-cutting and can enable more efficient local oscillator distribution systems for new astrophysics and planetary receivers and heterodyne array instruments. It can also allow for a new, electronically scannable solid-state array technology for future Earth science radar instruments and communications platforms.

Grinding Si3N4 Powder In Si3N4 Equipment

NASA Technical Reports Server (NTRS)

Herbell, Thomas P.; Freedman, Marc R.; Kiser, James D.

1989-01-01

Three methods of grinding compared. Report based on study of grinding silicon nitride powder in preparation for sintering into solid ceramic material. Attrition, vibratory, and ball mills lined with reaction-bonded silicon nitride tested. Rates of reduction of particle sizes and changes in chemical compositions of powders measured so grinding efficiences and increases in impurity contents from wear of mills and media evaluated for each technique.

High temperature resistant cermet and ceramic compositions. [for thermal resistant insulators and refractory coatings

NASA Technical Reports Server (NTRS)

Phillips, W. M. (Inventor)

1978-01-01

High temperature oxidation resistance, high hardness and high abrasion and wear resistance are properties of cermet compositions particularly to provide high temperature resistant refractory coatings on metal substrates, for use as electrical insulation seals for thermionic converters. The compositions comprise a sintered body of particles of a high temperature resistant metal or metal alloy, preferably molybdenum or tungsten particles, dispersed in and bonded to a solid solution formed of aluminum oxide and silicon nitride, and particularly a ternary solid solution formed of a mixture of aluminum oxide, silicon nitride and aluminum nitride. Ceramic compositions comprising a sintered solid solution of aluminum oxide, silicon nitride and aluminum nitride are also described.

Amber light-emitting diode comprising a group III-nitride nanowire active region

DOEpatents

Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

2014-07-22

A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

Selective-area nanoheteroepitaxy for light emitting diode (LED) applications

NASA Astrophysics Data System (ADS)

Wildeson, Isaac H.

Over 20% of the electricity in the United States is consumed for lighting, and the majority of this energy is wasted as heat during the lighting process. A solid-state (or light emitting diode (LED)-based) light source has the potential of saving the United States billions of dollars in electricity and reducing megatons of global CO2 emissions annually. While white light LEDs are currently on the market with efficiencies that are superior to incandescent and fluorescent light sources, their high up-front cost is inhibiting mass adoption. One reason for the high cost is the inefficiency of green and amber LEDs that can used to make white light. The inefficiency of green and amber LEDs results in more of these chips being required, and thus a higher cost. Improvements in the performance of green and amber LEDs is also required in order to realize the full potential of solid-state lighting. Nanoheteroepitaxy is an interesting route towards achieving efficient green and amber LEDs as it resolves major challenges that are currently plaguing III-nitride LEDs such as high dislocation densities and limited active region critical thicknesses. A method for fabricating III-nitride nanopyramid LEDs is presented that employs conventional processing used in industry. The present document begins with an overview of the current challenges in III-nitride LEDs and the benefits of nanoheteroepitaxy. A process for controlled selective-area growth of nanopyramid LEDs by organometallic vapor phase epitaxy has been developed throughout the course of this work. Dielectric templates used for the selective-area growth are patterned by two methods, namely porous anodic alumina and electron-beam lithography. The dielectric templates serve as efficient dislocation filters; however, planar defects are initiated during lower temperature growth on the nanopyramids. The quantum wells outline six semipolar planes that form each hexagonal pyramid. Quantum wells grown on these semipolar planes generate built-in electric fields with magnitudes that are one-tenth those on the polar c-plane with the same (In,Ga)N composition. The lateral strain relaxation innate in the nanoheterostructures allows greater coherent InN incorporation in the nanopyramids as compared to thin-film heterostructures, as confirmed by electroluminescence and transmission electron microscopy. In addition to applications for light emitting diodes, selective area growth of GaN nanostructures is also important for biological and sensing applications. A process for fabricating porous GaN nanorods is presented that also relies on selective-area organometallic vapor phase epitaxy. The nanopore walls are primarily outlined by nonpolar planes, and the diameter of the nanopore can be controlled by the diameter of the opening in the dielectric template and the growth time. The lining of the nanopore walls is comprised of crystalline GaN, which makes these structures interesting for sensing, electrical and optical applications.

ZnO PN Junctions for Highly-Efficient, Low-Cost Light Emitting Diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

David P. Norton; Stephen Pearton; Fan Ren

2007-09-30

By 2015, the US Department of Energy has set as a goal the development of advanced solid state lighting technologies that are more energy efficient, longer lasting, and more cost-effective than current technology. One approach that is most attractive is to utilize light-emitting diode technologies. Although III-V compound semiconductors have been the primary focus in pursuing this objective, ZnO-based materials present some distinct advantages that could yield success in meeting this objective. As with the nitrides, ZnO is a direct bandgap semiconductor whose gap energy (3.2 eV) can be tuned from 3.0 to 4 eV with substitution of Mg formore » higher bandgap, Cd for lower bandgap. ZnO has an exciton binding energy of 60 meV, which is larger than that for the nitrides, indicating that it should be a superior light emitting semiconductor. Furthermore, ZnO thin films can be deposited at temperatures on the order of 400-600 C, which is significantly lower than that for the nitrides and should lead to lower manufacturing costs. It has also been demonstrated that functional ZnO electronic devices can be fabricated on inexpensive substrates, such as glass. Therefore, for the large-area photonic application of solid state lighting, ZnO holds unique potential. A significant impediment to exploiting ZnO in light-emitting applications has been the absence of effective p-type carrier doping. However, the recent realization of acceptor-doped ZnO material overcomes this impediment, opening the door to ZnO light emitting diode development In this project, the synthesis and properties of ZnO-based pn junctions for light emitting diodes was investigated. The focus was on three issues most pertinent to realizing a ZnO-based solid state lighting technology, namely (1) achieving high p-type carrier concentrations in epitaxial and polycrystalline films, (2) realizing band edge emission from pn homojunctions, and (3) investigating pn heterojunction constructs that should yield efficient light emission. The project engaged established expertise at the University of Florida in ZnO film growth (D. Norton), device fabrication (F. Ren) and wide bandgap photonics (S. Pearton). It addressed p-type doping and junction formation in (Zn,Mg)O alloy thin films. The project employed pulsed laser deposition for film growth. The p-type dopant of interest was primarily phosphorus, given the recent results in our laboratory and elsewhere that this anions can yield p-type ZnO-based materials. The role of Zn interstitials, oxygen vacancies, and/or hydrogen complexes in forming compensating shallow donor levels imposes the need to simultaneously consider the role of in situ and post-growth processing conditions. Temperature-dependent Hall, Seebeck, C-V, and resistivity measurements was used to determine conduction mechanisms, carrier type, and doping. Temperature-dependent photoluminescence was used to determine the location of the acceptor level, injection efficiency, and optical properties of the structures. X-ray diffraction will used to characterize film crystallinity. Using these materials, the fabrication and characterization of (Zn,Mg)O pn homojunction and heterojunction devices was pursued. Electrical characterization of the junction capacitance and I-V behavior was used to extract junction profile and minority carrier lifetime. Electroluminescence from biased junctions was the primary property of interest.« less

Large tunable valley splitting in edge-free graphene quantum dots on boron nitride

NASA Astrophysics Data System (ADS)

Freitag, Nils M.; Reisch, Tobias; Chizhova, Larisa A.; Nemes-Incze, Péter; Holl, Christian; Woods, Colin R.; Gorbachev, Roman V.; Cao, Yang; Geim, Andre K.; Novoselov, Kostya S.; Burgdörfer, Joachim; Libisch, Florian; Morgenstern, Markus

2018-05-01

Coherent manipulation of the binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid-state systems, whereas exploitation of the valley has only recently been started, albeit without control at the single-electron level. Here, we show that van der Waals stacking of graphene onto hexagonal boron nitride offers a natural platform for valley control. We use a graphene quantum dot induced by the tip of a scanning tunnelling microscope and demonstrate valley splitting that is tunable from -5 to +10 meV (including valley inversion) by sub-10-nm displacements of the quantum dot position. This boosts the range of controlled valley splitting by about one order of magnitude. The tunable inversion of spin and valley states should enable coherent superposition of these degrees of freedom as a first step towards graphene-based qubits.

Red-emitting manganese-doped aluminum nitride phosphor

NASA Astrophysics Data System (ADS)

Cherepy, Nerine J.; Payne, Stephen A.; Harvey, Nicholas M.; Åberg, Daniel; Seeley, Zachary M.; Holliday, Kiel S.; Tran, Ich C.; Zhou, Fei; Martinez, H. Paul; Demeyer, Jessica M.; Drobshoff, Alexander D.; Srivastava, Alok M.; Camardello, Samuel J.; Comanzo, Holly A.; Schlagel, Deborah L.; Lograsso, Thomas A.

2016-04-01

We report high efficiency luminescence with a manganese-doped aluminum nitride red-emitting phosphor under 254 nm excitation, as well as its excellent lumen maintenance in fluorescent lamp conditions, making it a candidate replacement for the widely deployed europium-doped yttria red phosphor. Solid-state reaction of aluminum nitride powders with manganese metal at 1900 °C, 10 atm N2 in a reducing environment results in nitrogen deficiency, as revealed diffuse reflectance spectra. When these powders are subsequently annealed in flowing nitrogen at 1650 °C, higher nitrogen content is recovered, resulting in white powders. Silicon was added to samples as an oxygen getter to improve emission efficiency. NEXAFS spectra and DFT calculations indicate that the Mn dopant is divalent. From DFT calculations, the UV absorption band is proposed to be due to an aluminum vacancy coupled with oxygen impurity dopants, and Mn2+ is assumed to be closely associated with this site. In contrast with some previous reports, we find that the highest quantum efficiency with 254 nm excitation (Q.E. = 0.86 ± 0.14) is obtained in aluminum nitride with a low manganese doping level of 0.06 mol.%. The principal Mn2+ decay of 1.25 ms is assigned to non-interacting Mn sites, while additional components in the microsecond range appear with higher Mn doping, consistent with Mn clustering and resultant exchange coupling. Slower components are present in samples with low Mn doping, as well as strong afterglow, assigned to trapping on shallow traps followed by detrapping and subsequent trapping on Mn.

Red-emitting manganese-doped aluminum nitride phosphor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cherepy, Nerine J.; Payne, Stephen A.; Harvey, Nicholas M.

2016-02-10

Here, we report high efficiency luminescence with a manganese-doped aluminum nitride red-emitting phosphor under 254 nm excitation, as well as its excellent lumen maintenance in fluorescent lamp conditions, making it a candidate replacement for the widely deployed europium-doped yttria red phosphor. Solid-state reaction of aluminum nitride powders with manganese metal at 1900 °C, 10 atm N2 in a reducing environment results in nitrogen deficiency, as revealed diffuse reflectance spectra. When these powders are subsequently annealed in flowing nitrogen at 1650 °C, higher nitrogen content is recovered, resulting in white powders. Silicon was added to samples as an oxygen getter tomore » improve emission efficiency. NEXAFS spectra and DFT calculations indicate that the Mn dopant is divalent. From DFT calculations, the UV absorption band is proposed to be due to an aluminum vacancy coupled with oxygen impurity dopants, and Mn2+ is assumed to be closely associated with this site. In contrast with some previous reports, we find that the highest quantum efficiency with 254 nm excitation (Q.E. = 0.86 ± 0.14) is obtained in aluminum nitride with a low manganese doping level of 0.06 mol.%. The principal Mn2+ decay of 1.25 ms is assigned to non-interacting Mn sites, while additional components in the microsecond range appear with higher Mn doping, consistent with Mn clustering and resultant exchange coupling. Slower components are present in samples with low Mn doping, as well as strong afterglow, assigned to trapping on shallow traps followed by detrapping and subsequent trapping on Mn.« less

Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants

DOEpatents

Pugar, Eloise A.; Morgan, Peter E. D.

1990-01-01

A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N.sub.n H.sub.(n+m) wherein: n=1-4 and m=2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200.degree.-1700.degree. C. for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si-N-H intermediate enables chemical pathways to be explored previously unavailable in conventional solid state approaches to silicon-nitrogen ceramics.

Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants

DOEpatents

Pugar, E.A.; Morgan, P.E.D.

1987-09-15

A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N/sub n/H/sub (n+m)/ wherein: n = 1--4 and m = 2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200--1700/degree/C for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si/endash/N/endash/H intermediate enables chemical pathways to be explored previously unavailable in conventional solid-state approaches to silicon-nitrogen ceramics

Droop-free Al_xGa_1-xN/Al_yGa_1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates.

PubMed

Janjua, Bilal; Sun, Haiding; Zhao, Chao; Anjum, Dalaver H; Priante, Davide; Alhamoud, Abdullah A; Wu, Feng; Li, Xiaohang; Albadri, Abdulrahman M; Alyamani, Ahmed Y; El-Desouki, Munir M; Ng, Tien Khee; Ooi, Boon S

2017-01-23

Currently the AlGaN-based ultraviolet (UV) solid-state lighting research suffers from numerous challenges. In particular, low internal quantum efficiency, low extraction efficiency, inefficient doping, large polarization fields, and high dislocation density epitaxy constitute bottlenecks in realizing high power devices. Despite the clear advantage of quantum-confinement nanostructure, it has not been widely utilized in AlGaN-based nanowires. Here we utilize the self-assembled nanowires (NWs) with embedding quantum-disks (Qdisks) to mitigate these issues, and achieve UV emission of 337 nm at 32 A/cm² (80 mA in 0.5 × 0.5 mm² device), a turn-on voltage of ~5.5 V and droop-free behavior up to 120 A/cm² of injection current. The device was grown on a titanium-coated n-type silicon substrate, to improve current injection and heat dissipation. A narrow linewidth of 11.7 nm in the electroluminescence spectrum and a strong wavefunctions overlap factor of 42% confirm strong quantum confinement within uniformly formed AlGaN/AlGaN Qdisks, verified using transmission electron microscopy (TEM). The nitride-based UV nanowires light-emitting diodes (NWs-LEDs) grown on low cost and scalable metal/silicon template substrate, offers a scalable, environment friendly and low cost solution for numerous applications, such as solid-state lighting, spectroscopy, medical science and security.

Impact of Alloy Fluctuations on Radiative and Auger Recombination in InGaN Quantum Wells

NASA Astrophysics Data System (ADS)

Jones, Christina; Teng, Chu-Hsiang; Yan, Qimin; Ku, Pei-Cheng; Kioupakis, Emmanouil

Light-emitting diodes (LEDs) based on indium gallium nitride (InGaN) are important for efficient solid-state lighting (2014 Nobel Prize in Physics). Despite its many successes, InGaN suffers from issues that reduce the efficiency of devices at high power, such as the green gap and efficiency droop. The origin of the droop has been attributed to Auger recombination, mediated by carrier scattering due to phonons and alloy disorder. Additionally, InGaN exhibits atomic-scale composition fluctuations that localize carriers and may affect the efficiency. In this work, we study the effect of local composition fluctuations on the radiative recombination rate, Auger recombination rate, and efficiency of InGaN/GaN quantum wells. We apply k.p calculations to simulate band edges and wave functions of quantum wells with fluctuating alloy distributions based on atom probe tomography data, and we evaluate double and triple overlaps of electron and hole wave functions. We compare results for quantum wells with fluctuating alloy distributions to those with uniform alloy compositions and to published work. Our results demonstrate that alloy-composition fluctuations aggravate the efficiency-droop and green-gap problems and further reduce LED efficiency at high power. We acknowledge the NSF CAREER award DMR-1254314, the NSF Graduate Research Fellowship Program DGE-1256260, and the DOE NERSC facility (DE-AC02-05CH11231).

Boron nitride nanowires synthesis via a simple chemical vapor deposition at 1200 °C

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmad, Pervaiz; Khandaker, Mayeen Uddin; Amin, Yusoff Mohd

2015-04-24

A very simple chemical vapor deposition technique is used to synthesize high quality boron nitride nanowires at 1200 °C within a short growth duration of 30 min. FESEM micrograph shows that the as-synthesized boron nitride nanowires have a clear wire like morphology with diameter in the range of ∼20 to 150 nm. HR-TEM confirmed the wire-like structure of boron nitride nanowires, whereas XPS and Raman spectroscopy are used to find out the elemental composition and phase of the synthesized material. The synthesized boron nitride nanowires have potential applications as a sensing element in solid state neutron detector, neutron capture therapy and microelectronicmore » devices with uniform electronic properties.« less

Highly Efficient Plastic Crystal Ionic Conductors for Solid-state Dye-sensitized Solar Cells

PubMed Central

Hwang, Daesub; Kim, Dong Young; Jo, Seong Mu; Armel, Vanessa; MacFarlane, Douglas R.; Kim, Dongho; Jang, Sung-Yeon

2013-01-01

We have developed highly efficient, ambient temperature, solid-state ionic conductors (SSICs) for dye-sensitized solar cells (DSSCs) by doping a molecular plastic crystal, succinonitrile (SN), with trialkyl-substituted imidazolium iodide salts. High performance SSICs with enhanced ionic conductivity (2–4 mScm−1) were obtained. High performance solid-state DSSCs with power conversion efficiency of 7.8% were fabricated using our SSICs combined with unique hierarchically nanostructured TiO2 sphere (TiO2-SP) photoelectrodes; these electrodes have significant macroporosity, which assists penetration of the solid electrolyte into the electrode. The performance of our solid-state DSSCs is, to the best of our knowledge, the highest reported thus far for cells using plastic crystal-based SSICs, and is comparable to that of the state-of-the-art DSSCs which use ionic liquid type electrolytes. This report provides a logical strategy for the development of efficient plastic crystal-based SSICs for DSSCs and other electrochemical devices. PMID:24343425

BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs

NASA Astrophysics Data System (ADS)

Williams, Logan; Kioupakis, Emmanouil

2017-11-01

InGaN-based visible light-emitting diodes (LEDs) find commercial applications for solid-state lighting and displays, but lattice mismatch limits the thickness of InGaN quantum wells that can be grown on GaN with high crystalline quality. Since narrower wells operate at a higher carrier density for a given current density, they increase the fraction of carriers lost to Auger recombination and lower the efficiency. The incorporation of boron, a smaller group-III element, into InGaN alloys is a promising method to eliminate the lattice mismatch and realize high-power, high-efficiency visible LEDs with thick active regions. In this work, we apply predictive calculations based on hybrid density functional theory to investigate the thermodynamic, structural, and electronic properties of BInGaN alloys. Our results show that BInGaN alloys with a B:In ratio of 2:3 are better lattice matched to GaN compared to InGaN and, for indium fractions less than 0.2, nearly lattice matched. Deviations from Vegard's law appear as bowing of the in-plane lattice constant with respect to composition. Our thermodynamics calculations demonstrate that the solubility of boron is higher in InGaN than in pure GaN. Varying the Ga mole fraction while keeping the B:In ratio constant enables the adjustment of the (direct) gap in the 1.75-3.39 eV range, which covers the entire visible spectrum. Holes are strongly localized in non-bonded N 2p states caused by local bond planarization near boron atoms. Our results indicate that BInGaN alloys are promising for fabricating nitride heterostructures with thick active regions for high-power, high-efficiency LEDs.

Thin film CdTe based neutron detectors with high thermal neutron efficiency and gamma rejection for security applications

NASA Astrophysics Data System (ADS)

Smith, L.; Murphy, J. W.; Kim, J.; Rozhdestvenskyy, S.; Mejia, I.; Park, H.; Allee, D. R.; Quevedo-Lopez, M.; Gnade, B.

2016-12-01

Solid-state neutron detectors offer an alternative to 3He based detectors, but suffer from limited neutron efficiencies that make their use in security applications impractical. Solid-state neutron detectors based on single crystal silicon also have relatively high gamma-ray efficiencies that lead to false positives. Thin film polycrystalline CdTe based detectors require less complex processing with significantly lower gamma-ray efficiencies. Advanced geometries can also be implemented to achieve high thermal neutron efficiencies competitive with silicon based technology. This study evaluates these strategies by simulation and experimentation and demonstrates an approach to achieve >10% intrinsic efficiency with <10-6 gamma-ray efficiency.

History of ``NANO''-Scale VERY EARLY Solid-State (and Liquid-State) Physics/Chemistry/Metallurgy/ Ceramics; Interstitial-Alloys Carbides/Nitrides/Borides/...Powders and Cermets, Rock Shocks, ...

NASA Astrophysics Data System (ADS)

Maiden, Colin; Siegel, Edward

History of ``NANO'': Siegel-Matsubara-Vest-Gregson[Mtls. Sci. and Eng. 8, 6, 323(`71); Physica Status Solidi (a)11,45(`72)] VERY EARLY carbides/nitrides/borides powders/cermets solid-state physics/chemistry/metallurgy/ ceramics FIRST-EVER EXPERIMENTAL NANO-physics/chemistry[1968 ->Physica Status Solidi (a)11,45(`72); and EARLY NANO-``physics''/NANO-``chemistry'' THEORY(after: Kubo(`62)-Matsubara(`60s-`70s)-Fulde (`65) [ref.: Sugano[Microcluster-Physics, Springer('82 `98)

Isotopic effects on phonon anharmonicity in layered van der Waals crystals: Isotopically pure hexagonal boron nitride

NASA Astrophysics Data System (ADS)

Cuscó, Ramon; Artús, Luis; Edgar, James H.; Liu, Song; Cassabois, Guillaume; Gil, Bernard

2018-04-01

Hexagonal boron nitride (h -BN) is a layered crystal that is attracting a great deal of attention as a promising material for nanophotonic applications. The strong optical anisotropy of this crystal is key to exploit polaritonic modes for manipulating light-matter interactions in 2D materials. h -BN has also great potential for solid-state neutron detection and neutron imaging devices, given the exceptionally high thermal neutron capture cross section of the boron-10 isotope. A good knowledge of phonons in layered crystals is essential for harnessing long-lived phonon-polariton modes for nanophotonic applications and may prove valuable for developing solid-state 10BN neutron detectors with improved device architectures and higher detection efficiencies. Although phonons in graphene and isoelectronic materials with a similar hexagonal layer structure have been studied, the effect of isotopic substitution on the phonons of such lamellar compounds has not been addressed yet. Here we present a Raman scattering study of the in-plane high-energy Raman active mode on isotopically enriched single-crystal h -BN. Phonon frequency and lifetime are measured in the 80-600-K temperature range for 10B-enriched, 11B-enriched, and natural composition high quality crystals. Their temperature dependence is explained in the light of perturbation theory calculations of the phonon self-energy. The effects of crystal anisotropy, isotopic disorder, and anharmonic phonon-decay channels are investigated in detail. The isotopic-induced changes in the phonon density of states are shown to enhance three-phonon anharmonic decay channels in 10B-enriched crystals, opening the possibility of isotope tuning of the anharmonic phonon decay processes.

Design of defect spins in piezoelectric aluminum nitride for solid-state hybrid quantum technologies

DOE PAGES

Seo, Hosung; Govoni, Marco; Galli, Giulia

2016-02-15

Spin defects in wide-band gap semiconductors are promising systems for the realization of quantum bits, or qubits, in solid-state environments. To date, defect qubits have only been realized in materials with strong covalent bonds. Here, we introduce a strain-driven scheme to rationally design defect spins in functional ionic crystals, which may operate as potential qubits. In particular, using a combination of state-of-the-art ab-initio calculations based on hybrid density functional and many-body perturbation theory, we predicted that the negatively charged nitrogen vacancy center in piezoelectric aluminum nitride exhibits spin-triplet ground states under realistic uni- and bi-axial strain conditions; such states maymore » be harnessed for the realization of qubits. As a result, the strain-driven strategy adopted here can be readily extended to a wide range of point defects in other wide-band gap semiconductors, paving the way to controlling the spin properties of defects in ionic systems for potential spintronic technologies.« less

Shock-induced reaction synthesis of cubic boron nitride

NASA Astrophysics Data System (ADS)

Beason, M. T.; Pauls, J. M.; Gunduz, I. E.; Rouvimov, S.; Manukyan, K. V.; Matouš, K.; Son, S. F.; Mukasyan, A.

2018-04-01

Here, we report ultra-fast (0.1-5 μs) shock-induced reactions in the 3B-TiN system, leading to the direct synthesis of cubic boron nitride, which is extremely rare in nature and is the second hardest material known. Composite powders were produced through high-energy ball milling to provide intimate mixing and subsequently shocked using an explosive charge. High-resolution transmission electron microscopy and X-ray diffraction confirm the formation of nanocrystalline grains of c-BN produced during the metathetical reaction between boron and titanium nitride. Our results illustrate the possibility of rapid reactions enabled by high-energy ball milling possibly occurring in the solid state on incredibly short timescales. This process may provide a route for the discovery and fabrication of advanced compounds.

Polarization-free integrated gallium-nitride photonics

PubMed Central

Bayram, C.; Liu, R.

2017-01-01

Gallium Nitride (GaN) materials are the backbone of emerging solid state lighting. To date, GaN research has been primarily focused on hexagonal phase devices due to the natural crystallization. This approach limits the output power and efficiency of LEDs, particularly in the green spectrum. However, GaN can also be engineered to be in cubic phase. Cubic GaN has a lower bandgap (~200 meV) than hexagonal GaN that enables green LEDs much easily. Besides, cubic GaN has more isotropic properties (smaller effective masses, higher carrier mobility, higher doping efficiency, and higher optical gain than hexagonal GaN), and cleavage planes. Due to phase instability, however, cubic phase materials and devices have remained mostly unexplored. Here we review a new method of cubic phase GaN generation: Hexagonal-to-cubic phase transition, based on novel nano-patterning. We report a new crystallographic modelling of this hexagonal-to-cubic phase transition and systematically study the effects of nano-patterning on the GaN phase transition via transmission electron microscopy and electron backscatter diffraction experiments. In summary, silicon-integrated cubic phase GaN light emitters offer a unique opportunity for exploration in next generation photonics. PMID:29307953

A physical model for evaluating uranium nitride specific heat

NASA Astrophysics Data System (ADS)

Baranov, V. G.; Devyatko, Yu. N.; Tenishev, A. V.; Khlunov, A. V.; Khomyakov, O. V.

2013-03-01

Nitride fuel is one of perspective materials for the nuclear industry. But unlike the oxide and carbide uranium and mixed uranium-plutonium fuel, the nitride fuel is less studied. The present article is devoted to the development of a model for calculating UN specific heat on the basis of phonon spectrum data within the solid state theory.

A new molybdenum nitride catalyst with rhombohedral MoS2 structure for hydrogenation applications.

PubMed

Wang, Shanmin; Ge, Hui; Sun, Shouli; Zhang, Jianzhong; Liu, Fangming; Wen, Xiaodong; Yu, Xiaohui; Wang, Liping; Zhang, Yi; Xu, Hongwu; Neuefeind, Joerg C; Qin, Zhangfeng; Chen, Changfeng; Jin, Changqin; Li, Yongwang; He, Duanwei; Zhao, Yusheng

2015-04-15

Nitrogen-rich transition-metal nitrides hold great promise to be the next-generation catalysts for clean and renewable energy applications. However, incorporation of nitrogen into the crystalline lattices of transition metals is thermodynamically unfavorable at atmospheric pressure; most of the known transition metal nitrides are nitrogen-deficient with molar ratios of N:metal less than a unity. In this work, we have formulated a high-pressure route for the synthesis of a nitrogen-rich molybdenum nitride through a solid-state ion-exchange reaction. The newly discovered nitride, 3R-MoN2, adopts a rhombohedral R3m structure, isotypic with MoS2. This new nitride exhibits catalytic activities that are three times more active than the traditional catalyst MoS2 for the hydrodesulfurization of dibenzothiophene and more than twice as high in the selectivity to hydrogenation. The nitride is also catalytically active in sour methanation of syngas with >80% CO and H2 conversion at 723 K. Our formulated route for the synthesis of 3R-MoN2 is at a moderate pressure of 3.5 GPa and, thus, is feasible for industrial-scale catalyst production.

Ultrathin Cobalt Oxide Overlayer Promotes Catalytic Activity of Cobalt Nitride for the Oxygen Reduction Reaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abroshan, Hadi; Bothra, Pallavi; Back, Seoin

Here, the oxygen reduction reaction (ORR) plays a crucial role in various energy devices such as proton-exchange membrane fuel cells (PEMFCs) and metal–air batteries. Owing to the scarcity of the current state-of-the-art Pt-based catalysts, cost-effective Pt-free materials such as transition metal nitrides and their derivatives have gained overwhelming interest as alternatives. In particular, cobalt nitride (CoN) has demonstrated a reasonably high ORR activity. However, the nature of its active phase still remains elusive. Here, we employ density functional theory calculations to study the surface reactivity of rocksalt (RS) and zincblend (ZB) cobalt nitride. The performances of the catalysts terminated bymore » the facets of (100), (110), and (111) are studied for the ORR. We demonstrate that the cobalt nitride surface is highly susceptible to oxidation under ORR conditions. The as-formed oxide overlayer on the facets of CoN RS(100) and CoN ZB(110) presents a significant promotional effect in reducing the ORR overpotential, thereby increasing the activity in comparison with those of the pure CoNs. The results of this work rationalize a number of experimental reports in the literature and disclose the nature of the active phase of cobalt nitrides for the ORR. Moreover, they offer guidelines for understanding the activity of other transition metal nitrides and designing efficient catalysts for future generation of PEMFCs.« less

Ultrathin Cobalt Oxide Overlayer Promotes Catalytic Activity of Cobalt Nitride for the Oxygen Reduction Reaction

DOE PAGES

Abroshan, Hadi; Bothra, Pallavi; Back, Seoin; ...

2018-02-12

Here, the oxygen reduction reaction (ORR) plays a crucial role in various energy devices such as proton-exchange membrane fuel cells (PEMFCs) and metal–air batteries. Owing to the scarcity of the current state-of-the-art Pt-based catalysts, cost-effective Pt-free materials such as transition metal nitrides and their derivatives have gained overwhelming interest as alternatives. In particular, cobalt nitride (CoN) has demonstrated a reasonably high ORR activity. However, the nature of its active phase still remains elusive. Here, we employ density functional theory calculations to study the surface reactivity of rocksalt (RS) and zincblend (ZB) cobalt nitride. The performances of the catalysts terminated bymore » the facets of (100), (110), and (111) are studied for the ORR. We demonstrate that the cobalt nitride surface is highly susceptible to oxidation under ORR conditions. The as-formed oxide overlayer on the facets of CoN RS(100) and CoN ZB(110) presents a significant promotional effect in reducing the ORR overpotential, thereby increasing the activity in comparison with those of the pure CoNs. The results of this work rationalize a number of experimental reports in the literature and disclose the nature of the active phase of cobalt nitrides for the ORR. Moreover, they offer guidelines for understanding the activity of other transition metal nitrides and designing efficient catalysts for future generation of PEMFCs.« less

Ultrathin-shell boron nitride hollow spheres as sorbent for dispersive solid-phase extraction of polychlorinated biphenyls from environmental water samples.

PubMed

Fu, Meizhen; Xing, Hanzhu; Chen, Xiangfeng; Chen, Fan; Wu, Chi-Man Lawrence; Zhao, Rusong; Cheng, Chuange

2014-11-21

Boron nitride hollow spheres with ultrathin-shells were synthesized and used as sorbents for dispersive solid-phase extraction of aromatic pollutants at trace levels from environmental water samples. Polychlorinated biphenyls (PCBs) were selected as target compounds. Sample quantification and detection were performed by gas chromatography-tandem mass spectrometry. Extraction parameters influencing the extraction efficiency were optimized through response surface methodology using the Box-Behnken design. The proposed method achieved good linearity within the concentration range of 0.15-250 ng L(-1) PCBs, low limits of detection (0.04-0.09 ng L(-1), S/N=3:1), good repeatability of the extractions (relative standard deviation, <12%, n=6), and satisfactory recoveries between 84.9% and 101.0% under optimal conditions. Real environmental samples collected from rivers, local lakes, rain and spring waters were analyzed using the developed method. Results demonstrated that the hexagonal boron nitride-based material has significant potential as a sorbent for organic pollutant extraction from environmental water samples. Copyright © 2014 Elsevier B.V. All rights reserved.

Boron nitride solid state neutron detector

DOEpatents

Doty, F. Patrick

2004-04-27

The present invention describes an apparatus useful for detecting neutrons, and particularly for detecting thermal neutrons, while remaining insensitive to gamma radiation. Neutrons are detected by direct measurement of current pulses produced by an interaction of the neutrons with hexagonal pyrolytic boron nitride.

Silicon Nitride Equation of State

NASA Astrophysics Data System (ADS)

Swaminathan, Pazhayannur; Brown, Robert

2015-06-01

This report presents the development a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4) . Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonalβ-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products and then combined with the single component solid models to study the global phase diagram. Sponsored by the NASA Goddard Space Flight Center Living With a Star program office.

High pressure in solid state chemistry: Combined experimental and modeling approaches for assessing and predicting properties

NASA Astrophysics Data System (ADS)

Etourneau, Jean; Matar, Samir F.

2018-06-01

The thermodynamic pressure parameter has been thoroughly used with mastership by Gérard Demazeau throughout his rich career in solid state chemistry and materials sciences and more recently in biosciences. After a review of such works, focus is made in this topical article on his contribution together with his team in the field of hard materials based on light elements B, C, N with a proposition of a new ultra-hard carbon nitride C2N on one hand and on the structural transformations under high pressures of perovskite into postperovskite with a change of dimensionality from 3D to 2D and related oxides, regarding the arrangement of octahedra, on the other hand. Investigation and concepts first arising from experimental observables are shown to be aided and accelerated via first principles calculations of energy and energy-related quantities.

Enhancing the Hardness of Sintered SS 17-4PH Using Nitriding Process for Bracket Orthodontic Application

NASA Astrophysics Data System (ADS)

Suharno, B.; Supriadi, S.; Ayuningtyas, S. T.; Widjaya, T.; Baek, E. R.

2018-01-01

Brackets orthodontic create teeth movement by applying force from wire to bracket then transferred to teeth. However, emergence of friction between brackets and wires reduces load for teeth movement towards desired area. In order to overcome these problem, surface treatment like nitriding chosen as a process which could escalate efficiency of transferred force by improving material hardness since hard materials have low friction levels. This work investigated nitriding treatment to form nitride layer which affecting hardness of sintered SS 17-4PH. The nitride layers produced after nitriding process at various temperature i.e. 470°C, 500°C, 530°C with 8hr holding time under 50% NH3 atmosphere. Optical metallography was conducted to compare microstructure of base and surface metal while the increasing of surface hardness then observed using vickers microhardness tester. Hardened surface layer was obtained after gaseous nitriding process because of nitride layer that contains Fe4N, CrN and Fe-αN formed. Hardness layers can achieved value 1051 HV associated with varies thickness from 53 to 119 μm. The presence of a precipitation process occurring in conjunction with nitriding process can lead to a decrease in hardness due to nitrogen content diminishing in solid solution phase. This problem causes weakening of nitrogen expansion in martensite lattice.

Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment

NASA Astrophysics Data System (ADS)

Yuan, Fang-Yuan; Deng, Ning; Shih, Chih-Cheng; Tseng, Yi-Ting; Chang, Ting-Chang; Chang, Kuan-Chang; Wang, Ming-Hui; Chen, Wen-Chung; Zheng, Hao-Xuan; Wu, Huaqiang; Qian, He; Sze, Simon M.

2017-10-01

A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable device which results in superior endurance (more than 109 cycles) and a self-compliance effect. Thus, the current conduction mechanism changed due to defect passivation by nitrogen atoms in the HfO2 thin film. At a high resistance state (HRS), it transferred to Schottky emission from Poole-Frenkel in HfO2-based RRAM. At low resistance state (LRS), the current conduction mechanism was space charge limited current (SCLC) after the nitridation treatment, which suggests that the nitrogen atoms form Hf-N-Ox vacancy clusters (Vo +) which limit electron movement through the switching layer.

Photocurrent generation in carbon nitride and carbon nitride/conjugated polymer composites.

PubMed

Byers, Joshua C; Billon, Florence; Debiemme-Chouvy, Catherine; Deslouis, Claude; Pailleret, Alain; Semenikhin, Oleg A

2012-09-26

The semiconductor and photovoltaic properties of carbon nitride (CNx) thin films prepared using a reactive magnetron cathodic sputtering technique were investigated both individually and as composites with an organic conjugated polymer, poly(2,2'-bithiophene) (PBT). The CNx films showed an increasing thickness as the deposition power and/or nitrogen content in the gas mixture increase. At low nitrogen content and low deposition power (25-50 W), the film structure was dominated by the abundance of the graphitic sp(2) regions, whereas at higher nitrogen contents and magnetron power CNx films started to demonstrate semiconductor properties, as evidenced by the occurrence of photoconductivity and the development of a space charge region. However, CNx films alone did not show any reproducible photovoltaic properties. The situation changed, however, when CNx was deposited onto conjugated PBT substrates. In this configuration, CNx was found to function as an acceptor material improving the photocurrent generation both in solution and in solid state photovoltaic devices, with the external quantum efficiencies reaching 1% at high nitrogen contents. The occurrence of the donor-acceptor charge transfer was further evidenced by suppression of the n-doping of the PBT polymer by CNx. Nanoscale atomic force microscopy (AFM) and current-sensing AFM data suggested that CNx may form a bulk heterojunction with PBT.

Solar selective performance of metal nitride/oxynitride based magnetron sputtered thin film coatings: a comprehensive review

NASA Astrophysics Data System (ADS)

Ibrahim, Khalil; Taha, Hatem; Mahbubur Rahman, M.; Kabir, Humayun; Jiang, Zhong-Tao

2018-03-01

Since solar-thermal collectors are considered to be the most direct way of converting solar energy into usable forms, in the last few years growing attention has been paid to the development of transition metal nitride and metal oxynitride based thin film selective surfaces for solar-thermal collectors, in order to harvest more solar energy. A solar-thermal energy system, generally, shows very high solar absorption of incident solar radiation from the solar-thermal collectors in the visible range (0.3 to 2.5 μm) and extremely low thermal losses through emission (or high reflection) in the infrared region (≥2.5 μm). The efficiency of a solar-thermal energy conversion system can be improved by the use of solar selective surfaces consisting of novel metallic nanoparticles embedded in metal nitride/oxynitride systems. In order to enhance the effectiveness of solar-thermal devices, solar selective surfaces with high thermal stability are a prerequisite. Over the years, substantial efforts have been made in the field of solar selective surfaces to attain higher solar absorptance and lower thermal emittance in high temperature (above 400 °C) applications. In this article, we review the present state-of-the-art transition metal nitride and/or oxynitride based vacuum sputtered nanostructured thin film coatings, with respect to their optical and solar selective surface applications. We have also summarized the solar selectivity data from recently published investigations, including discussion on some potential applications for these materials.

Dynamic Nuclear Polarization NMR Spectroscopy of Polymeric Carbon Nitride Photocatalysts: Insights into Structural Defects and Reactivity.

PubMed

Li, Xiaobo; Sergeyev, Ivan V; Aussenac, Fabien; Masters, Anthony F; Maschmeyer, Thomas; Hook, James M

2018-06-04

Metal-free polymeric carbon nitrides (PCNs) are promising photocatalysts for solar hydrogen production, but their structure-photoactivity relationship remains elusive. Two PCNs were characterized by dynamic-nuclear-polarization-enhanced solid-state NMR spectroscopy, which circumvented the need for specific labeling with either 13 C- or 15 N-enriched precursors. Rapid 1D and 2D data acquisition was possible, providing insights into the structural contrasts between the PCNs. Compared to PCN_B with lower performance, PCN_P is a more porous and more active photocatalyst that is richer in terminal N-H bonds not associated with interpolymer chains. It is proposed that terminal N-H groups act as efficient carrier traps and reaction sites. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-Pressure Design of Advanced BN-Based Materials.

PubMed

Kurakevych, Oleksandr O; Solozhenko, Vladimir L

2016-10-20

The aim of the present review is to highlight the state of the art in high-pressure design of new advanced materials based on boron nitride. Recent experimental achievements on the governing phase transformation, nanostructuring and chemical synthesis in the systems containing boron nitride at high pressures and high temperatures are presented. All these developments allowed discovering new materials, e.g., ultrahard nanocrystalline cubic boron nitride (nano-cBN) with hardness comparable to diamond, and superhard boron subnitride B 13 N₂. Thermodynamic and kinetic aspects of high-pressure synthesis are described based on the data obtained by in situ and ex situ methods. Mechanical and thermal properties (hardness, thermoelastic equations of state, etc.) are discussed. New synthetic perspectives, combining both soft chemistry and extreme pressure-temperature conditions are considered.

Compensation of native donor doping in ScN: Carrier concentration control and p-type ScN

NASA Astrophysics Data System (ADS)

Saha, Bivas; Garbrecht, Magnus; Perez-Taborda, Jaime A.; Fawey, Mohammed H.; Koh, Yee Rui; Shakouri, Ali; Martin-Gonzalez, Marisol; Hultman, Lars; Sands, Timothy D.

2017-06-01

Scandium nitride (ScN) is an emerging indirect bandgap rocksalt semiconductor that has attracted significant attention in recent years for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices and as a substrate material for high quality GaN growth. Due to the presence of oxygen impurities and native defects such as nitrogen vacancies, sputter-deposited ScN thin-films are highly degenerate n-type semiconductors with carrier concentrations in the (1-6) × 1020 cm-3 range. In this letter, we show that magnesium nitride (MgxNy) acts as an efficient hole dopant in ScN and reduces the n-type carrier concentration, turning ScN into a p-type semiconductor at high doping levels. Employing a combination of high-resolution X-ray diffraction, transmission electron microscopy, and room temperature optical and temperature dependent electrical measurements, we demonstrate that p-type Sc1-xMgxN thin-film alloys (a) are substitutional solid solutions without MgxNy precipitation, phase segregation, or secondary phase formation within the studied compositional region, (b) exhibit a maximum hole-concentration of 2.2 × 1020 cm-3 and a hole mobility of 21 cm2/Vs, (c) do not show any defect states inside the direct gap of ScN, thus retaining their basic electronic structure, and (d) exhibit alloy scattering dominating hole conduction at high temperatures. These results demonstrate MgxNy doped p-type ScN and compare well with our previous reports on p-type ScN with manganese nitride (MnxNy) doping.

Sandblasting nozzle

NASA Technical Reports Server (NTRS)

Perkins, G. S.; Pawlik, E. V.; Phillips, W. M. (Inventor)

1981-01-01

A nozzle for use with abrasive and/or corrosive materials is formed of sintered ceramic compositions having high temperature oxidation resistance, high hardness and high abrasion and corrosion resistance. The ceramic may be a binary solid solution of a ceramic oxide and silicon nitride, and preferably a ternary solid solution of a ceramic oxide, silicon nitride and aluminum nitride. The ceramic oxide is selected from a group consisting of Al2O3, Y2O3 and Cr2O3, or mixtures of those compounds. Titanium carbide particles are dispersed in the ceramic mixture before sintering. The nozzles are encased for protection from external forces while in use by a metal or plastic casing.

Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge

PubMed Central

Ooi, K. J. A.; Ng, D. K. T.; Wang, T.; Chee, A. K. L.; Ng, S. K.; Wang, Q.; Ang, L. K.; Agarwal, A. M.; Kimerling, L. C.; Tan, D. T. H.

2017-01-01

CMOS platforms operating at the telecommunications wavelength either reside within the highly dissipative two-photon regime in silicon-based optical devices, or possess small nonlinearities. Bandgap engineering of non-stoichiometric silicon nitride using state-of-the-art fabrication techniques has led to our development of USRN (ultra-silicon-rich nitride) in the form of Si7N3, that possesses a high Kerr nonlinearity (2.8 × 10−13 cm2 W−1), an order of magnitude larger than that in stoichiometric silicon nitride. Here we experimentally demonstrate high-gain optical parametric amplification using USRN, which is compositionally tailored such that the 1,550 nm wavelength resides above the two-photon absorption edge, while still possessing large nonlinearities. Optical parametric gain of 42.5 dB, as well as cascaded four-wave mixing with gain down to the third idler is observed and attributed to the high photon efficiency achieved through operating above the two-photon absorption edge, representing one of the largest optical parametric gains to date on a CMOS platform. PMID:28051064

Tri-s-triazine-Based Crystalline Carbon Nitride Nanosheets for an Improved Hydrogen Evolution.

PubMed

Ou, Honghui; Lin, Lihua; Zheng, Yun; Yang, Pengju; Fang, Yuanxing; Wang, Xinchen

2017-06-01

Tri-s-triazine-based crystalline carbon nitride nanosheets (CCNNSs) have been successfully extracted via a conventional and cost-effective sonication-centrifugation process. These CCNNSs possess a highly defined and unambiguous structure with minimal thickness, large aspect ratios, homogeneous tri-s-triazine-based units, and high crystallinity. These tri-s-triazine-based CCNNSs show significantly enhanced photocatalytic hydrogen generation activity under visible light than g-C 3 N 4 , poly (triazine imide)/Li + Cl - , and bulk tri-s-triazine-based crystalline carbon nitrides. A highly apparent quantum efficiency of 8.57% at 420 nm for hydrogen production from aqueous methanol feedstock can be achieved from tri-s-triazine-based CCNNSs, exceeding most of the reported carbon nitride nanosheets. Benefiting from the inherent structure of 2D crystals, the ultrathin tri-s-triazine-based CCNNSs provide a broad range of application prospects in the fields of bioimaging, and energy storage and conversion. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fundamental Studies and Development of III-N Visible LEDs for High-Power Solid-State Lighting Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dupuis, Russell

The goal of this program is to understand in a fundamental way the impact of strain, defects, polarization, and Stokes loss in relation to unique device structures upon the internal quantum efficiency (IQE) and efficiency droop (ED) of III-nitride (III-N) light-emitting diodes (LEDs) and to employ this understanding in the design and growth of high-efficiency LEDs capable of highly-reliable, high-current, high-power operation. This knowledge will be the basis for our advanced device epitaxial designs that lead to improved device performance. The primary approach we will employ is to exploit new scientific and engineering knowledge generated through the application of amore » set of unique advanced growth and characterization tools to develop new concepts in strain-, polarization-, and carrier dynamics-engineered and low-defect materials and device designs having reduced dislocations and improved carrier collection followed by efficient photon generation. We studied the effects of crystalline defect, polarizations, hole transport, electron-spillover, electron blocking layer, underlying layer below the multiplequantum- well active region, and developed high-efficiency and efficiency-droop-mitigated blue LEDs with a new LED epitaxial structures. We believe new LEDs developed in this program will make a breakthrough in the development of high-efficiency high-power visible III-N LEDs from violet to green spectral region.« less

Electronic structures of superionic conductor Li3N

NASA Astrophysics Data System (ADS)

Aoki, Masaru; Ode, Yoshiyuki; Tsumuraya, Kazuo

2011-03-01

Lithium nitride is a superionic conductor with high Li conductivity. The compound has been studied extensively because of its potential utility as electrolyte in solid-state batteries. Though the mobility of the cations within the crystalline solid is high comparable to that of molten salts, the mechanism of the high mobility of the cations remains unsolved. To clarify the origin of the mobility we investigate the electronic states of the Li cations in the Li 3 N crystal with the first principles electronic structure analysis, focusing a correlation between the cations and the ionicities of the constituent atoms. We have found the existence of the covalent bonding between the Li atoms in the Li 3 N crystal in spite of the ionized states of the constituent atoms.

Silicon nitride equation of state

NASA Astrophysics Data System (ADS)

Brown, Robert C.; Swaminathan, Pazhayannur K.

2017-01-01

This report presents the development of a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4).1 Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonal β-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data that have indicated a complex and slow time dependent phase change to the c-Si3N4 phase. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products; however, the need for a kinetic approach is suggested to combine with the single component solid models to simulate and further investigate the global phase coexistences.

Highly efficient all-nitride phosphor-converted white light emitting diode

NASA Astrophysics Data System (ADS)

Mueller-Mach, Regina; Mueller, Gerd; Krames, Michael R.; Höppe, Henning A.; Stadler, Florian; Schnick, Wolfgang; Juestel, Thomas; Schmidt, Peter

2005-07-01

The development and demonstration of a highly efficient warm-white all-nitride phosphor-converted light emitting diode (pc-LED) is presented utilizing a GaN based quantum well blue LED and two novel nitrogen containing luminescent materials, both of which are doped with Eu2+. For color conversion of the primary blue the nitridosilicates M2Si5N8 (orange-red) and MSi2O2N2 (yellow-green), with M = alkaline earth, were employed, thus achieving a high luminous efficiency (25 lumen/W at 1 W input), excellent color quality (correlated color temperature CCT = 3200 K, general color rendering index Ra > 90) and the highest proven color stability of any pc-LED obtained so far. Thus, these novel all-nitride LEDs are superior to both incandescent and fluorescent lamps and may therefore become the next generation of general lighting sources.

Hexagonal boron nitride neutron detectors with high detection efficiencies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maity, A.; Grenadier, S. J.; Li, J.

Here, neutron detectors fabricated from 10B enriched hexagonal boron nitride (h- 10BN or h-BN) epilayers have demonstrated the highest thermal neutron detection efficiency among solid-state neutron detectors to date at about 53%. In this work, photoconductive-like vertical detectors with a detection area of 1 × 1 mm 2 were fabricated from 50 μm thick free-standing h-BN epilayers using Ni/Au and Ti/Al bilayers as ohmic contacts. Leakage currents, mobility-lifetime (μτ) products under UV photoexcitation, and neutron detection efficiencies have been measured for a total of 16 different device configurations. The results have unambiguously identified that detectors incorporating the Ni/Au bilayer onmore » both surfaces as ohmic contacts and using the negatively biased top surface for neutron irradiation are the most desired device configurations. It was noted that high growth temperatures of h- 10BN epilayers on sapphire substrates tend to yield a higher concentration of oxygen impurities near the bottom surface, leading to a better device performance by the chosen top surface for irradiation than by the bottom. Preferential scattering of oxygen donors tends to reduce the mobility of holes more than that of electrons, making the biasing scheme with the ability of rapidly extracting holes at the irradiated surface while leaving the electrons to travel a large average distance inside the detector at a preferred choice. When measured against a calibrated 6LiF filled micro-structured semiconductor neutron detector, it was shown that the optimized configuration has pushed the detection efficiency of h-BN neutron detectors to 58%. These detailed studies also provided a better understanding of growth-mediated impurities in h-BN epilayers and their effects on the charge collection and neutron detection efficiencies.« less

Hexagonal boron nitride neutron detectors with high detection efficiencies

NASA Astrophysics Data System (ADS)

Maity, A.; Grenadier, S. J.; Li, J.; Lin, J. Y.; Jiang, H. X.

2018-01-01

Neutron detectors fabricated from 10B enriched hexagonal boron nitride (h-10BN or h-BN) epilayers have demonstrated the highest thermal neutron detection efficiency among solid-state neutron detectors to date at about 53%. In this work, photoconductive-like vertical detectors with a detection area of 1 × 1 mm2 were fabricated from 50 μm thick free-standing h-BN epilayers using Ni/Au and Ti/Al bilayers as ohmic contacts. Leakage currents, mobility-lifetime (μτ) products under UV photoexcitation, and neutron detection efficiencies have been measured for a total of 16 different device configurations. The results have unambiguously identified that detectors incorporating the Ni/Au bilayer on both surfaces as ohmic contacts and using the negatively biased top surface for neutron irradiation are the most desired device configurations. It was noted that high growth temperatures of h-10BN epilayers on sapphire substrates tend to yield a higher concentration of oxygen impurities near the bottom surface, leading to a better device performance by the chosen top surface for irradiation than by the bottom. Preferential scattering of oxygen donors tends to reduce the mobility of holes more than that of electrons, making the biasing scheme with the ability of rapidly extracting holes at the irradiated surface while leaving the electrons to travel a large average distance inside the detector at a preferred choice. When measured against a calibrated 6LiF filled micro-structured semiconductor neutron detector, it was shown that the optimized configuration has pushed the detection efficiency of h-BN neutron detectors to 58%. These detailed studies also provided a better understanding of growth-mediated impurities in h-BN epilayers and their effects on the charge collection and neutron detection efficiencies.

Hexagonal boron nitride neutron detectors with high detection efficiencies

DOE PAGES

Maity, A.; Grenadier, S. J.; Li, J.; ...

2018-01-23

Here, neutron detectors fabricated from 10B enriched hexagonal boron nitride (h- 10BN or h-BN) epilayers have demonstrated the highest thermal neutron detection efficiency among solid-state neutron detectors to date at about 53%. In this work, photoconductive-like vertical detectors with a detection area of 1 × 1 mm 2 were fabricated from 50 μm thick free-standing h-BN epilayers using Ni/Au and Ti/Al bilayers as ohmic contacts. Leakage currents, mobility-lifetime (μτ) products under UV photoexcitation, and neutron detection efficiencies have been measured for a total of 16 different device configurations. The results have unambiguously identified that detectors incorporating the Ni/Au bilayer onmore » both surfaces as ohmic contacts and using the negatively biased top surface for neutron irradiation are the most desired device configurations. It was noted that high growth temperatures of h- 10BN epilayers on sapphire substrates tend to yield a higher concentration of oxygen impurities near the bottom surface, leading to a better device performance by the chosen top surface for irradiation than by the bottom. Preferential scattering of oxygen donors tends to reduce the mobility of holes more than that of electrons, making the biasing scheme with the ability of rapidly extracting holes at the irradiated surface while leaving the electrons to travel a large average distance inside the detector at a preferred choice. When measured against a calibrated 6LiF filled micro-structured semiconductor neutron detector, it was shown that the optimized configuration has pushed the detection efficiency of h-BN neutron detectors to 58%. These detailed studies also provided a better understanding of growth-mediated impurities in h-BN epilayers and their effects on the charge collection and neutron detection efficiencies.« less

Transition Metal Nitrides for Electrocatalytic Energy Conversion: Opportunities and Challenges.

PubMed

Xie, Junfeng; Xie, Yi

2016-03-07

Electrocatalytic energy conversion has been considered as one of the most efficient and promising pathways for realizing energy storage and energy utilization in modern society. To improve electrocatalytic reactions, specific catalysts are needed to lower the overpotential. In the search for efficient alternatives to noble metal catalysts, transition metal nitrides have attracted considerable interest due to their high catalytic activity and unique electronic structure. Over the past few decades, numerous nitride-based catalysts have been explored with respect to their ability to drive various electrocatalytic reactions, such as the hydrogen evolution reaction and the oxygen evolution reaction to achieve water splitting and the oxygen reduction reaction coupled with the methanol oxidation reaction to construct fuel cells or rechargeable Li-O2 batteries. This Minireview provides a brief overview of recent progress on electrocatalysts based on transition metal nitrides, and outlines the current challenges and future opportunities. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of partial nitridation on the structure and luminescence properties of melilite-type Ca2Al2SiO7:Eu2+ phosphor

NASA Astrophysics Data System (ADS)

Luo, Yi; Xia, Zhiguo

2014-09-01

Ca1.97Al2-xSi1+xO7-xNx:0.03Eu2+ (x = 0-0.4) phosphors have been prepared by using the high temperature solid-state reaction. The effect of phase structures, photoluminescence (PL) properties and the thermal stabilities have been investigated based on the substitution of Al-O bond in Ca2Al2SiO7:Eu2+ phosphor with Si-N bond. The XRD Rietveld refinement and 29Si NMR analysis results verify the introduction of partial Si-N bonds. It is found that the PL spectra shift to the blue region abnormally from 530 to 515 nm, and the possible mechanism has been proposed. The activation energy becomes large along with the nitridation process, which coincides with the explanation of configuration coordinate diagram.

III-Nitride Blue Laser Diode with Photoelectrochemically Etched Current Aperture

NASA Astrophysics Data System (ADS)

Megalini, Ludovico

Group III-nitride is a remarkable material system to make highly efficient and high-power optoelectronics and electronic devices because of the unique electrical, physical, chemical and structural properties it offers. In particular, InGaN-based blue Laser Diodes (LDs) have been successfully employed in a variety of applications ranging from biomedical and military devices to scientific instrumentation and consumer electronics. Recently their use in highly efficient Solid State Lighting (SSL) has been proposed because of their superior beam quality and higher efficiency at high input power density. Tremendous advances in research of GaN semi-polar and non-polar crystallographic planes have led both LEDs and LDs grown on these non-basal planes to rival with, and with the promise to outperform, their equivalent c-plane counterparts. However, still many issues need to be addressed, both related to material growth and device fabrication, including a lack of conventional wet etching techniques. GaN and its alloys with InN and AlN have proven resistant essentially to all known standard wet etching techniques, and the predominant etching methods rely on chlorine-based dry etching (RIE). These introduce sub-surface damage which can degrade the electrical properties of the epitaxial structure and reduce the reliability and lifetime of the final device. Such reasons and the limited effectiveness of passivation techniques have so far suggested to etch the LD ridges before the active region, although it is well-known that this can badly affect the device performance, especially in narrow stripe width LDs, because the gain guiding obtained in the planar configuration is weak and the low index step and high lateral current leakage result in devices with threshold current density higher than devices whose ridge is etched beyond the active region. Moreover, undercut etching of III-nitride layers has proven even more challenging, with limitations in control of the lateral etch distance. In this dissertation it is presented the first nitride blue edge emitting LD with a photoelectrochemical etched current aperture (CA-LD) into the device active region. Photoelectrochemical etching (PECE) has emerged as a powerful wet etching technique for III-nitride compounds. Beyond the advantages of wet etching technique, PECE offers bandgap selectivity, which is particularly desirable because it allows more freedom in designing new and advanced devices with higher performances. In the first part of this thesis a review of PECE is presented, and it is shown how it can be used to achieve a selective and controllable deep undercut of the active region of LEDs and LDs, in particular the selective PECE of MQW active region of (10-10) m-plane and (20-2-1) plane structures is reported. In the second part of this thesis, the fabrication flow process of the CA-LD is described. The performance of these devices is compared with that of shallow etched ridge LDs with a nominally identical epitaxial structure and active region width and it is experimentally shown that the CA-LD design has superior performance. CW operation of a (20-2-1) CA-LD with a 1.5 microm wide active region is demonstrated. Finally, in the third and last part of this thesis, the CA-LD performance is discussed in more details, in particular, an analysis of optical scattering losses caused by the rough edges of the remnant PEC etched active region is presented.

Reaching the Ionic Current Detection Limit in Silicon-Based Nanopores

NASA Astrophysics Data System (ADS)

Puster, Matthew; Rodriguez-Manzo, Julio Alejandro; Nicolai, Adrien; Meunier, Vincent; Drndic, Marija

2015-03-01

Solid-state nanopores act as single-molecule sensors whereby passage of an individual molecule in aqueous electrolyte through a nanopore is registered as a change in ionic conductance (ΔG). Future nanopore applications such as DNA sequencing at high bandwidth require high ΔG for optimal signal-to-noise ratio. Reducing the nanopore diameter and thickness increase ΔG. Molecule size limits the diameter, thus efforts concentrate on minimizing the thickness by thinning oxide/nitride films or using 2D materials. Weighted by electrolyte conductivity the highest ΔG reported to date for DNA translocations were obtained with nanopores made in oxide/nitride films. We present a controlled electron irradiation technique to thin such films to the limit of their stability, producing nanopores tailored to molecule size in amorphous Si with thicknesses less than 2 nm. We compare ΔG values with results found in the literature for DNA translocation through these nanopores, where access resistance becomes comparable to the resistance through the nanopore itself.

Fuel development for gas-cooled fast reactors

NASA Astrophysics Data System (ADS)

Meyer, M. K.; Fielding, R.; Gan, J.

2007-09-01

The Generation IV Gas-cooled Fast Reactor (GFR) concept is proposed to combine the advantages of high-temperature gas-cooled reactors (such as efficient direct conversion with a gas turbine and the potential for application of high-temperature process heat), with the sustainability advantages that are possible with a fast-spectrum reactor. The latter include the ability to fission all transuranics and the potential for breeding. The GFR is part of a consistent set of gas-cooled reactors that includes a medium-term Pebble Bed Modular Reactor (PBMR)-like concept, or concepts based on the Gas Turbine Modular Helium Reactor (GT-MHR), and specialized concepts such as the Very High-Temperature Reactor (VHTR), as well as actinide burning concepts [A Technology Roadmap for Generation IV Nuclear Energy Systems, US DOE Nuclear Energy Research Advisory Committee and the Generation IV International Forum, December 2002]. To achieve the necessary high power density and the ability to retain fission gas at high temperature, the primary fuel concept proposed for testing in the United States is dispersion coated fuel particles in a ceramic matrix. Alternative fuel concepts considered in the US and internationally include coated particle beds, ceramic clad fuel pins, and novel ceramic 'honeycomb' structures. Both mixed carbide and mixed nitride-based solid solutions are considered as fuel phases.

Hierarchical TiN nanoparticles-assembled nanopillars for flexible supercapacitors with high volumetric capacitance.

PubMed

Qin, Ping; Li, Xingxing; Gao, Biao; Fu, Jijiang; Xia, Lu; Zhang, Xuming; Huo, Kaifu; Shen, Wenli; Chu, Paul K

2018-05-10

Titanium nitride (TiN) is an attractive electrode material in fast charging/discharging supercapacitors because of its excellent conductivity. However, the low capacitance and mechanical brittleness of TiN restricts its further application in flexible supercapacitors with high energy density. Thus, it is still a challenge to rationally design TiN electrodes with both high electrochemical and mechanical properties. Herein, the hierarchical TiN nanoparticles-assembled nanopillars (H-TiN NPs) array as binder free electrodes were obtained by nitriding of hierarchical titanium dioxide (TiO2) nanopillars, which was produced by a simple hydrothermal treatment of anodic TiO2 nanotubes (NTs) array in water. The porous TiN nanoparticles connected to each other to form ordered nanopillar arrays, effectively providing larger specific surface area and more active sites for charge storage. The H-TiN NPs delivered a high volumetric capacitance of 120 F cm-3 at 0.83 A cm-3, which is better than that of TiN NTs arrays (69 F cm-3 at 0.83 A cm-3). After assembling into all-solid-state devices, the H-TiN NPs based supercapacitors exhibited outstanding volumetric capacitance of 5.9 F cm-3 at 0.02 A cm-3 and a high energy density of 0.53 mW h cm-3. Our results reveal a new strategy to optimize the supercapacitive performance of metal nitrides.

Highly Efficient Quantum Sieving in Porous Graphene-like Carbon Nitride for Light Isotopes Separation

NASA Astrophysics Data System (ADS)

Qu, Yuanyuan; Li, Feng; Zhou, Hongcai; Zhao, Mingwen

2016-01-01

Light isotopes separation, such as 3He/4He, H2/D2, H2/T2, etc., is crucial for various advanced technologies including isotope labeling, nuclear weapons, cryogenics and power generation. However, their nearly identical chemical properties made the separation challenging. The low productivity of the present isotopes separation approaches hinders the relevant applications. An efficient membrane with high performance for isotopes separation is quite appealing. Based on first-principles calculations, we theoretically demonstrated that highly efficient light isotopes separation, such as 3He/4He, can be reached in a porous graphene-like carbon nitride material via quantum sieving effect. Under moderate tensile strain, the quantum sieving of the carbon nitride membrane can be effectively tuned in a continuous way, leading to a temperature window with high 3He/4He selectivity and permeance acceptable for efficient isotopes harvest in industrial application. This mechanism also holds for separation of other light isotopes, such as H2/D2, H2/T2. Such tunable quantum sieving opens a promising avenue for light isotopes separation for industrial application.

Transire, a Program for Generating Solid-State Interface Structures

DTIC Science & Technology

2017-09-14

function-based electron transport property calculator. Three test cases are presented to demonstrate the usage of Transire: the misorientation of the...graphene bilayer, the interface energy as a function of misorientation of copper grain boundaries, and electron transport transmission across the...gallium nitride/silicon carbide interface. 15. SUBJECT TERMS crystalline interface, electron transport, python, computational chemistry, grain boundary

Heteroepitaxial Growth of Single-Walled Carbon Nanotubes from Boron Nitride

PubMed Central

Tang, Dai-Ming; Zhang, Li-Li; Liu, Chang; Yin, Li-Chang; Hou, Peng-Xiang; Jiang, Hua; Zhu, Zhen; Li, Feng; Liu, Bilu; Kauppinen, Esko I.; Cheng, Hui-Ming

2012-01-01

The growth of single-walled carbon nanotubes (SWCNTs) with predefined structure is of great importance for both fundamental research and their practical applications. Traditionally, SWCNTs are grown from a metal catalyst with a vapor-liquid-solid mechanism, where the catalyst is in liquid state with fluctuating structures, and it is intrinsically unfavorable for the structure control of SWCNTs. Here we report the heteroepitaxial growth of SWCNTs from a platelet boron nitride nanofiber (BNNF), which is composed of stacked (002) planes and is stable at high temperatures. SWCNTs are found to grow epitaxially from the open (002) edges of the BNNFs, and the diameters of the SWCNTs are multiples of the BN (002) interplanar distance. In situ transmission electron microscopy observations coupled with first principles calculations reveal that the growth of SWCNTs from the BNNFs follows a vapor-solid-solid mechanism. Our work opens opportunities for the control over the structure of SWCNTs by hetero-crystallographic epitaxy. PMID:23240076

Powder-XRD and (14) N magic angle-spinning solid-state NMR spectroscopy of some metal nitrides.

PubMed

Kempgens, Pierre; Britton, Jonathan

2016-05-01

Some metal nitrides (TiN, ZrN, InN, GaN, Ca3 N2 , Mg3 N2 , and Ge3 N4 ) have been studied by powder X-ray diffraction (XRD) and (14) N magic angle-spinning (MAS) solid-state NMR spectroscopy. For Ca3 N2 , Mg3 N2 , and Ge3 N4 , no (14) N NMR signal was observed. Low speed (νr  = 2 kHz for TiN, ZrN, and GaN; νr  = 1 kHz for InN) and 'high speed' (νr  = 15 kHz for TiN; νr  = 5 kHz for ZrN; νr  = 10 kHz for InN and GaN) MAS NMR experiments were performed. For TiN, ZrN, InN, and GaN, powder-XRD was used to identify the phases present in each sample. The number of peaks observed for each sample in their (14) N MAS solid-state NMR spectrum matches perfectly well with the number of nitrogen-containing phases identified by powder-XRD. The (14) N MAS solid-state NMR spectra are symmetric and dominated by the quadrupolar interaction. The envelopes of the spinning sidebands manifold are Lorentzian, and it is concluded that there is a distribution of the quadrupolar coupling constants Qcc 's arising from structural defects in the compounds studied. Copyright © 2015 John Wiley & Sons, Ltd.

Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern.

PubMed

Han, Nam; Cuong, Tran Viet; Han, Min; Ryu, Beo Deul; Chandramohan, S; Park, Jong Bae; Kang, Ji Hye; Park, Young-Jae; Ko, Kang Bok; Kim, Hee Yun; Kim, Hyun Kyu; Ryu, Jae Hyoung; Katharria, Y S; Choi, Chel-Jong; Hong, Chang-Hee

2013-01-01

The future of solid-state lighting relies on how the performance parameters will be improved further for developing high-brightness light-emitting diodes. Eventually, heat removal is becoming a crucial issue because the requirement of high brightness necessitates high-operating current densities that would trigger more joule heating. Here we demonstrate that the embedded graphene oxide in a gallium nitride light-emitting diode alleviates the self-heating issues by virtue of its heat-spreading ability and reducing the thermal boundary resistance. The fabrication process involves the generation of scalable graphene oxide microscale patterns on a sapphire substrate, followed by its thermal reduction and epitaxial lateral overgrowth of gallium nitride in a metal-organic chemical vapour deposition system under one-step process. The device with embedded graphene oxide outperforms its conventional counterpart by emitting bright light with relatively low-junction temperature and thermal resistance. This facile strategy may enable integration of large-scale graphene into practical devices for effective heat removal.

NASA satellite communications application research. Phase 2: Efficient high power, solid state amplifier for EFH communications

NASA Technical Reports Server (NTRS)

Benet, James

1993-01-01

The final report describes the work performed from 9 Jun. 1992 to 31 Jul. 1993 on the NASA Satellite Communications Application Research (SCAR) Phase 2 program, Efficient High Power, Solid State Amplifier for EHF Communications. The purpose of the program was to demonstrate the feasibility of high-efficiency, high-power, EHF solid state amplifiers that are smaller, lighter, more efficient, and less costly than existing traveling wave tube (TWT) amplifiers by combining the output power from up to several hundred solid state amplifiers using a unique orthomode spatial power combiner (OSPC).

High-efficiency Light-emitting Devices based on Semipolar III-Nitrides

NASA Astrophysics Data System (ADS)

Oh, Sang Ho

In the future, the light-emitting diodes (LEDs) are expected to fully penetrate into the lighting market. A tremendous amount of energy will be saved through the LED-based lighting. Apparently, the amount of the energy saving strongly depends on the efficiency of the LEDs: this dissertation is all about the efficiency. First, the III-nitride LEDs grown on free-standing semipolar (202¯1¯) GaN substrates will be discussed. In many studies, LEDs grown on semipolar III-nitride substrates exhibited high efficiency at high current density. In this dissertation, "droop-free" (202¯1¯) blue LEDs will be demonstrated, especially for the standard industrial chip size. In addition, contact optimization process for (202¯1¯) LEDs will be discussed. Series resistance of the (202¯1¯) LED devices has been improved through the contact optimization. As a result, the wall-plug efficiency (WPE) of the device was boosted by ˜50%, compared to that of the previously reported (202¯1¯) LEDs. Also, chip shaping for the semipolar LEDs to enhance the extraction efficiency will be covered as well. A new mesa design will be introduced, and the cleaving scheme for semipolar LED wafers will be thoroughly discussed. Lastly, as a future work, selective area growth of ZnO light extraction features will be introduced and its preliminary result will be demonstrated.

All-nitride AlxGa1−xN:Mn/GaN distributed Bragg reflectors for the near-infrared

PubMed Central

Capuzzo, Giulia; Kysylychyn, Dmytro; Adhikari, Rajdeep; Li, Tian; Faina, Bogdan; Tarazaga Martín-Luengo, Aitana; Bonanni, Alberta

2017-01-01

Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new generation of high-power electronic and spintronic devices. While III-nitride optoelectronics in the visible and ultraviolet spectral range is widely established, all-nitride efficient devices in the near-infrared (NIR) are still wanted. Here, through a comprehensive protocol of design, modeling, epitaxial growth and in-depth characterization, we develop AlxGa1−xN:Mn/GaN NIR distributed Bragg reflectors and we show their efficiency in combination with GaN:(Mn,Mg) layers containing Mn-Mgk complexes optically active in the near-infrared range of wavelengths. PMID:28198432

Highly efficient color filter array using resonant Si3N4 gratings.

PubMed

Uddin, Mohammad Jalal; Magnusson, Robert

2013-05-20

We demonstrate the design and fabrication of a highly efficient guided-mode resonant color filter array. The device is designed using numerical methods based on rigorous coupled-wave analysis and is patterned using UV-laser interferometric lithography. It consists of a 60-nm-thick subwavelength silicon nitride grating along with a 105-nm-thick homogeneous silicon nitride waveguide on a glass substrate. The fabricated device exhibits blue, green, and red color response for grating periods of 274, 327, and 369 nm, respectively. The pixels have a spectral bandwidth of ~12 nm with efficiencies of 94%, 96%, and 99% at the center wavelength of blue, green, and red color filter, respectively. These are higher efficiencies than reported in the literature previously.

Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting

PubMed Central

Kim, Hoon-sik; Brueckner, Eric; Song, Jizhou; Li, Yuhang; Kim, Seok; Lu, Chaofeng; Sulkin, Joshua; Choquette, Kent; Huang, Yonggang; Nuzzo, Ralph G.; Rogers, John A.

2011-01-01

Properties that can now be achieved with advanced, blue indium gallium nitride light emitting diodes (LEDs) lead to their potential as replacements for existing infrastructure in general illumination, with important implications for efficient use of energy. Further advances in this technology will benefit from reexamination of the modes for incorporating this materials technology into lighting modules that manage light conversion, extraction, and distribution, in ways that minimize adverse thermal effects associated with operation, with packages that exploit the unique aspects of these light sources. We present here ideas in anisotropic etching, microscale device assembly/integration, and module configuration that address these challenges in unconventional ways. Various device demonstrations provide examples of the capabilities, including thin, flexible lighting “tapes” based on patterned phosphors and large collections of small light emitters on plastic substrates. Quantitative modeling and experimental evaluation of heat flow in such structures illustrates one particular, important aspect of their operation: small, distributed LEDs can be passively cooled simply by direct thermal transport through thin-film metallization used for electrical interconnect, providing an enhanced and scalable means to integrate these devices in modules for white light generation. PMID:21666096

A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wiggers, F. B., E-mail: F.B.Wiggers@utwente.nl; Van Bui, H.; Schmitz, J.

We present a method for the formation of an epitaxial  surface layer involving B, N, and Si atoms on a ZrB{sub 2}(0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH{sub 3} molecules with the silicene-terminated ZrB{sub 2}  surface was characterized by synchrotron-based, high-resolution core-level photoelectron spectroscopy and low-energy electron diffraction. In particular, the dissociative chemisorption of NH{sub 3} at 400 °C leads to surface  nitridation, and subsequent annealing up to 830 °C results in a solid phase reaction with the ZrB{sub 2} subsurface layers. In this way, amore » new nitride-based epitaxial  surface layer is formed with hexagonal symmetry and a single in-plane crystal orientation.« less

Novel thixotropic gel electrolytes based on dicationic bis-imidazolium salts for quasi-solid-state dye-sensitized solar cells

NASA Astrophysics Data System (ADS)

Kim, Jun Young; Kim, Tae Ho; Kim, Dong Young; Park, Nam-Gyu; Ahn, Kwang-Duk

Novel thixotropic gel electrolytes have been successfully prepared by utilizing oligomeric poly(ethylene oxide) (PEO)-based bis-imidazolium diiodide salts and hydrophilic silica nanoparticles for application in quasi-solid-state dye-sensitized solar cells (DSSCs). The thixotropic gel-state of the ionic liquid-based composite electrolytes is confirmed by observing the typical hysteresis loop and temporary hydrogen bonding. On using the PEO-based composite electrolyte, a quasi-solid-state DSSC exhibited highly improved properties such as easy penetration of the electrolyte into the cell without leakage, long-term stability, high open-circuit voltage without the use of 4- tert-butylpyridine, and a high energy-conversion efficiency of 5.25% under AM 1.5 illumination (100 mW cm -2).

Compressibility of 304 Stainless Steel Powder Metallurgy Materials Reinforced with 304 Short Stainless Steel Fibers

PubMed Central

Yao, Bibo; Zhou, Zhaoyao; Duan, Liuyang; Xiao, Zhiyu

2016-01-01

Powder metallurgy (P/M) technique is usually used for manufacturing porous metal materials. However, some P/M materials are limitedly used in engineering for their performance deficiency. A novel 304 stainless steel P/M material was produced by a solid-state sintering of 304 stainless steel powders and 304 short stainless steel fibers, which were alternately laid in layers according to mass ratio. In this paper, the compressive properties of the P/M materials were characterized by a series of uniaxial compression tests. The effects of fiber content, compaction pressure and high temperature nitriding on compressive properties were investigated. The results indicated that, without nitriding, the samples changed from cuboid to cydariform without damage in the process of compression. The compressive stress was enhanced with increasing fiber content ranging from 0 to 8 wt.%. For compaction pressure from 55 to 75 MPa, greater compaction pressure improved compressive stress. Moreover, high temperature nitriding was able to significantly improve the yield stress, but collapse failure eventually occurred. PMID:28773285

Compressibility of 304 Stainless Steel Powder Metallurgy Materials Reinforced with 304 Short Stainless Steel Fibers.

PubMed

Yao, Bibo; Zhou, Zhaoyao; Duan, Liuyang; Xiao, Zhiyu

2016-03-04

Powder metallurgy (P/M) technique is usually used for manufacturing porous metal materials. However, some P/M materials are limitedly used in engineering for their performance deficiency. A novel 304 stainless steel P/M material was produced by a solid-state sintering of 304 stainless steel powders and 304 short stainless steel fibers, which were alternately laid in layers according to mass ratio. In this paper, the compressive properties of the P/M materials were characterized by a series of uniaxial compression tests. The effects of fiber content, compaction pressure and high temperature nitriding on compressive properties were investigated. The results indicated that, without nitriding, the samples changed from cuboid to cydariform without damage in the process of compression. The compressive stress was enhanced with increasing fiber content ranging from 0 to 8 wt.%. For compaction pressure from 55 to 75 MPa, greater compaction pressure improved compressive stress. Moreover, high temperature nitriding was able to significantly improve the yield stress, but collapse failure eventually occurred.

Donor-Acceptor-Collector Ternary Crystalline Films for Efficient Solid-State Photon Upconversion.

PubMed

Ogawa, Taku; Hosoyamada, Masanori; Yurash, Brett; Nguyen, Thuc-Quyen; Yanai, Nobuhiro; Kimizuka, Nobuo

2018-06-25

It is pivotal to achieve efficient triplet-triplet annihilation based photon upconversion (TTA-UC) in the solid-state for enhancing potentials of renewable energy production devices. However, the UC efficiency of solid materials is largely limited by low fluorescence quantum yields that originate from the aggregation of TTA-UC chromophores, and also by severe back energy transfer from the acceptor singlet state to the singlet state of the triplet donor in the condensed state. In this work, to overcome these issues, we introduce a highly fluorescent singlet energy collector as the third component of donor-doped acceptor crystalline films, in which dual energy migration, i.e., triplet energy migration for TTA-UC and succeeding singlet energy migration for transferring energy to a collector, takes place. To demonstrate this scheme, a highly fluorescent singlet energy collector was added as the third component of donor-doped acceptor crystalline films. An anthracene-based acceptor containing alkyl chains and a carboxylic moiety is mixed with the triplet donor Pt(II) octaethylporphyrin (PtOEP) and the energy collector 2,5,8,11-tetra- tert-butylperylene (TTBP) in solution, and spin-coating of the mixed solution gives acceptor films of nanofibrous crystals homogeneously doped with PtOEP and TTBP. Interestingly, delocalized singlet excitons in acceptor crystals are found to diffuse effectively over the distance of ~37 nm. Thanks to this high diffusivity, only 0.5 mol% of doped TTBP can harvest most of the singlet excitons, which successfully doubles the solid-state fluorescent quantum yield of acceptor/TTBP blend films to 76%. Furthermore, since the donor PtOEP and the collector TTBP are separately isolated in the nanofibrous acceptor crystals, the singlet back energy transfer from the collector to the donor is effectively avoided. Such efficient singlet energy collection and inhibited back energy transfer processes result in a large increase of UC efficiency up to 9.0%, offering rational design principles towards ultimately efficient solid-state upconverters.

Health-friendly high-quality white light using violet-green-red laser and InGaN nanowires-based true yellow nanowires light-emitting diodes

NASA Astrophysics Data System (ADS)

Janjua, Bilal; Ng, Tien K.; Zhao, Chao; Anjum, Dalaver H.; Prabaswara, Aditya; Consiglio, Giuseppe Bernardo; Shen, Chao; Ooi, Boon S.

2017-02-01

White light based on blue laser - YAG: Ce3+ phosphor has the advantage of implementing solid-state lighting and optical wireless communications combined-functionalities in a single lamp. However, the blue light was found to disrupt melatonin production, and therefore the human circadian rhythm in general; while the yellow phosphor is susceptible to degradation by laser irradiation and also lack tunability in color rendering index (CRI). In this investigation, by using a violet laser, which has 50% less impact on circadian response, as compared to blue light, and an InGaN-quantum-disks nanowires-based light-emitting diode (NWs-LED), we address both issues simultaneously. The white light is therefore generated using violet-green-red lasers, in conjunction with a yellow NWs-LED realized using molecular beam epitaxy technique, on titanium-coated silicon substrates. Unlike the conventional quantum-well-based LED, the NWs-LED showed efficiency-droop free behavior up to 9.8 A/cm2 with peak output power of 400 μW. A low turn-on voltage of 2.1 V was attributed to the formation of conducting titanium nitride layer at NWs nucleation site and improved fabrication process in the presence of relatively uniform height distribution. The 3D quantum confinement and the reduced band bending improve carriers-wavefunctions overlap, resulting in an IQE of 39 %. By changing the relative intensities of the individual color components, CRI of >85 was achieved with tunable correlated color temperature (CCT), thus covering the desired room lighting conditions. Our architecture provides important considerations in designing smart solid-state lighting while addressing the harmful effect of blue light.

Plasmonic efficiencies of nanoparticles made of metal nitrides (TiN, ZrN) compared with gold

PubMed Central

Lalisse, Adrien; Tessier, Gilles; Plain, Jérome; Baffou, Guillaume

2016-01-01

Metal nitrides have been proposed to replace noble metals in plasmonics for some specific applications. In particular, while titanium nitride (TiN) and zirconium nitride (ZrN) possess localized plasmon resonances very similar to gold in magnitude and wavelength, they benefit from a much higher sustainability to temperature. For this reason, they are foreseen as ideal candidates for applications in nanoplasmonics that require high material temperature under operation, such as heat assisted magnetic recording (HAMR) or thermophotovoltaics. This article presents a detailed investigation of the plasmonic properties of TiN and ZrN nanoparticles in comparison with gold nanoparticles, as a function of the nanoparticle morphology. As a main result, metal nitrides are shown to be poor near-field enhancers compared to gold, no matter the nanoparticle morphology and wavelength. The best efficiencies of metal nitrides as compared to gold in term of near-field enhancement are obtained for small and spherical nanoparticles, and they do not exceed 60%. Nanoparticle enlargements or asymmetries are detrimental. These results mitigate the utility of metal nitrides for high-temperature applications such as HAMR, despite their high temperature sustainability. Nevertheless, at resonance, metal nitrides behave as efficient nanosources of heat and could be relevant for applications in thermoplasmonics, where heat generation is not detrimental but desired. PMID:27934890

Plasmonic efficiencies of nanoparticles made of metal nitrides (TiN, ZrN) compared with gold.

PubMed

Lalisse, Adrien; Tessier, Gilles; Plain, Jérome; Baffou, Guillaume

2016-12-09

Metal nitrides have been proposed to replace noble metals in plasmonics for some specific applications. In particular, while titanium nitride (TiN) and zirconium nitride (ZrN) possess localized plasmon resonances very similar to gold in magnitude and wavelength, they benefit from a much higher sustainability to temperature. For this reason, they are foreseen as ideal candidates for applications in nanoplasmonics that require high material temperature under operation, such as heat assisted magnetic recording (HAMR) or thermophotovoltaics. This article presents a detailed investigation of the plasmonic properties of TiN and ZrN nanoparticles in comparison with gold nanoparticles, as a function of the nanoparticle morphology. As a main result, metal nitrides are shown to be poor near-field enhancers compared to gold, no matter the nanoparticle morphology and wavelength. The best efficiencies of metal nitrides as compared to gold in term of near-field enhancement are obtained for small and spherical nanoparticles, and they do not exceed 60%. Nanoparticle enlargements or asymmetries are detrimental. These results mitigate the utility of metal nitrides for high-temperature applications such as HAMR, despite their high temperature sustainability. Nevertheless, at resonance, metal nitrides behave as efficient nanosources of heat and could be relevant for applications in thermoplasmonics, where heat generation is not detrimental but desired.

Crystal growth in supercritical ammonia using high surface area silicon nitride feedstock

NASA Astrophysics Data System (ADS)

Kaskel, Stefan; Khanna, Meikh; Zibrowius, Bodo; Schmidt, Hans-Werner; Ullner, Dirk

2004-01-01

The use of amorphous high surface area silicon nitride is proposed as a raw material for crystallization experiments in supercritical ammonia. Compared with earlier studies, the use of highly dispersed solids results in the crystallization of inorganic nitrides under relatively mild conditions (673 K). Mineralizers such as amides (LiNH 2, NaNH 2, KNH 2) are found to be effective crystallization aids. The crystalline products, detected using powder X-ray diffraction, are either MSi 2N 3 (M=Li, Na) or Si 2N 2NH. Si 2N 2NH is also characterized using 29Si MAS NMR. The spectrum shows a narrow line located at -44.7 ppm, whereas for amorphous silicon nitride-based materials the line is broad. The ammonothermal reaction of NaAl(NH 2) 4 and high surface area silicon nitride at 673 K affords a new orthorhombic phase, isostructural with NaSi 2N 3, but with extended lattice constants ( a=9.634, b=5.643, c=5.011 Å). Effective crystallization is also achieved using fluoride mineralizers (KF, CsF) at 673 K. A new small scale autoclave, suitable for laboratory syntheses at temperatures up to 873 K, is presented that can be loaded under inert gas.

Visible light metasurfaces based on gallium nitride high contrast gratings

NASA Astrophysics Data System (ADS)

Wang, Zhenhai; He, Shumin; Liu, Qifa; Wang, Wei

2016-05-01

We propose visible-light metasurfaces (VLMs) capable of serving as lens and beam deflecting element based on gallium nitride (GaN) high contrast gratings (HCGs). By precisely manipulating the wavefront of the transmitted light, we theoretically demonstrate an HCG focusing lens with transmissivity of 86.3%, and a VLM with beam deflection angle of 6.09° and transmissivity as high as 91.4%. The proposed all-dielectric metasurfaces are promising for GaN-based visible light-emitting diodes (LEDs), which would be robust and versatile for controlling the output light propagation and polarization, as well as enhancing the extraction efficiency of the LEDs.

Boron Nitride Substrates for High Mobility Chemical Vapor Deposited Graphene

DTIC Science & Technology

2011-06-13

Hone, H. L. Stormer , and P. Kim, Phys. Rev. Lett. 101, 096802 2008. 5K. I. Bolotin, K. J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, and...H. L. Stormer , Solid State Commun. 146, 351 2008. 6S. Berciaud, S. Ryu, L. E. Brus, and T. F. Heinz, Nano Lett. 9, 346 2009. 7S. Bae, H. Kim, Y

Diode pumped solid-state laser oscillators for spectroscopic applications

NASA Technical Reports Server (NTRS)

Byer, R. L.; Basu, S.; Fan, T. Y.; Kozlovsky, W. J.; Nabors, C. D.; Nilsson, A.; Huber, G.

1987-01-01

The rapid improvement in diode laser pump sources has led to the recent progress in diode laser pumped solid state lasers. To date, electrical efficiencies of greater than 10 percent were demonstrated. As diode laser costs decrease with increased production volume, diode laser and diode laser array pumped solid state lasers will replace the traditional flashlamp pumped Nd:YAG laser sources. The use of laser diode array pumping of slab geometry lasers will allow efficient, high peak and average power solid state laser sources to be developed. Perhaps the greatest impact of diode laser pumped solid state lasers will be in spectroscopic applications of miniature, monolithic devices. Single-stripe diode-pumped operation of a continuous-wave 946 nm Nd:YAG laser with less than 10 m/w threshold was demonstrated. A slope efficiency of 16 percent near threshold was shown with a projected slope efficiency well above a threshold of 34 percent based on results under Rhodamine 6G dye-laser pumping. Nonlinear crystals for second-harmonic generation of this source were evaluated. The KNbO3 and periodically poled LiNbO3 appear to be the most promising.

Functionalizing carbon nitride with heavy atom-free spin converters for enhanced 1 O 2 generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Wenting; Han, Congcong; Zhang, Qinhua

advanced photosensitizers for singlet oxygen (1O2) generation. However, the intersystem crossing (ISC) process is quite insufficient in carbon nitride, limiting the 1O2 generation. Here, we report a facile and general strategy to confined benzophenone as a heavy atom-free spin converter dopant in carbon nitride via the facile copolymerization. With proper energy level matching between the heavy atom-free spin converter and various ligands based on carbon nitride precursors, the proper combination can decrease the singlet-triplet energy gap (DEST) and hence generate 1O2 effectively. Due to its significant and selectivity for 1O2 generation, the as-prepared carbon nitride-based photosensitizer shows a high selectivemore » photooxidation activity for 1,5-dihydroxy-naphthalene (1,5-DHN). The product yield reached 71.8% after irradiation for 60 min, which was higher than that of cyclometalated PtII complexes (53.6%) in homogeneous photooxidation. This study can broaden the application of carbon nitride in the field of selective heterogeneous photooxidation due to simple operation, low cost, and high efficiency, making it a strong candidate for future industrialization.« less

Phosphor-Free InGaN White Light Emitting Diodes Using Flip-Chip Technology

PubMed Central

Li, Ying-Chang; Chang, Liann-Be; Chen, Hou-Jen; Yen, Chia-Yi; Pan, Ke-Wei; Huang, Bohr-Ran; Kuo, Wen-Yu; Chow, Lee; Zhou, Dan; Popko, Ewa

2017-01-01

Monolithic phosphor-free two-color gallium nitride (GaN)-based white light emitting diodes (LED) have the potential to replace current phosphor-based GaN white LEDs due to their low cost and long life cycle. Unfortunately, the growth of high indium content indium gallium nitride (InGaN)/GaN quantum dot and reported LED’s color rendering index (CRI) are still problematic. Here, we use flip-chip technology to fabricate an upside down monolithic two-color phosphor-free LED with four grown layers of high indium quantum dots on top of the three grown layers of lower indium quantum wells separated by a GaN tunneling barrier layer. The photoluminescence (PL) and electroluminescence (EL) spectra of this white LED reveal a broad spectrum ranging from 475 to 675 nm which is close to an ideal white-light source. The corresponding color temperature and color rendering index (CRI) of the fabricated white LED, operated at 350, 500, and 750 mA, are comparable to that of the conventional phosphor-based LEDs. Insights of the epitaxial structure and the transport mechanism were revealed through the TEM and temperature dependent PL and EL measurements. Our results show true potential in the Epi-ready GaN white LEDs for future solid state lighting applications. PMID:28772792

Rationally Designed Hierarchically Structured Tungsten Nitride and Nitrogen-Rich Graphene-Like Carbon Nanocomposite as Efficient Hydrogen Evolution Electrocatalyst.

PubMed

Zhu, Yanping; Chen, Gao; Zhong, Yijun; Zhou, Wei; Shao, Zongping

2018-02-01

Practical application of hydrogen production from water splitting relies strongly on the development of low-cost and high-performance electrocatalysts for hydrogen evolution reaction (HER). The previous researches mainly focused on transition metal nitrides as HER catalysts due to their electrical conductivity and corrosion stability under acidic electrolyte, while tungsten nitrides have reported poorer activity for HER. Here the activity of tungsten nitride is optimized through rational design of a tungsten nitride-carbon composite. More specifically, tungsten nitride (WN x ) coupled with nitrogen-rich porous graphene-like carbon is prepared through a low-cost ion-exchange/molten-salt strategy. Benefiting from the nanostructured WN x , the highly porous structure and rich nitrogen dopant (9.5 at%) of the carbon phase with high percentage of pyridinic-N (54.3%), and more importantly, their synergistic effect, the composite catalyst displays remarkably high catalytic activity while maintaining good stability. This work highlights a powerful way to design more efficient metal-carbon composites catalysts for HER.

Stabilized TiN nanowire arrays for high-performance and flexible supercapacitors.

PubMed

Lu, Xihong; Wang, Gongming; Zhai, Teng; Yu, Minghao; Xie, Shilei; Ling, Yichuan; Liang, Chaolun; Tong, Yexiang; Li, Yat

2012-10-10

Metal nitrides have received increasing attention as electrode materials for high-performance supercapacitors (SCs). However, most of them are suffered from poor cycling stability. Here we use TiN as an example to elucidate the mechanism causing the capacitance loss. X-ray photoelectron spectroscopy analyses revealed that the instability is due to the irreversible electrochemical oxidation of TiN during the charging/discharging process. Significantly, we demonstrate for the first time that TiN can be stabilized without sacrificing its electrochemical performance by using poly(vinyl alcohol) (PVA)/KOH gel as the electrolyte. The polymer electrolyte suppresses the oxidation reaction on electrode surface. Electrochemical studies showed that the TiN solid-state SCs exhibit extraordinary stability up to 15,000 cycles and achieved a high volumetric energy density of 0.05 mWh/cm(3). The capability of effectively stabilizing nitride materials could open up new opportunities in developing high-performance and flexible SCs.

Graded bandgap perovskite solar cells.

PubMed

Ergen, Onur; Gilbert, S Matt; Pham, Thang; Turner, Sally J; Tan, Mark Tian Zhi; Worsley, Marcus A; Zettl, Alex

2017-05-01

Organic-inorganic halide perovskite materials have emerged as attractive alternatives to conventional solar cell building blocks. Their high light absorption coefficients and long diffusion lengths suggest high power conversion efficiencies, and indeed perovskite-based single bandgap and tandem solar cell designs have yielded impressive performances. One approach to further enhance solar spectrum utilization is the graded bandgap, but this has not been previously achieved for perovskites. In this study, we demonstrate graded bandgap perovskite solar cells with steady-state conversion efficiencies averaging 18.4%, with a best of 21.7%, all without reflective coatings. An analysis of the experimental data yields high fill factors of ∼75% and high short-circuit current densities up to 42.1 mA cm -2 . The cells are based on an architecture of two perovskite layers (CH 3 NH 3 SnI 3 and CH 3 NH 3 PbI 3-x Br x ), incorporating GaN, monolayer hexagonal boron nitride, and graphene aerogel.

Simultaneously Enhancing Light Emission and Suppressing Efficiency Droop in GaN Microwire-Based Ultraviolet Light-Emitting Diode by the Piezo-Phototronic Effect.

PubMed

Wang, Xingfu; Peng, Wenbo; Yu, Ruomeng; Zou, Haiyang; Dai, Yejing; Zi, Yunlong; Wu, Changsheng; Li, Shuti; Wang, Zhong Lin

2017-06-14

Achievement of p-n homojuncted GaN enables the birth of III-nitride light emitters. Owing to the wurtzite-structure of GaN, piezoelectric polarization charges present at the interface can effectively control/tune the optoelectric behaviors of local charge-carriers (i.e., the piezo-phototronic effect). Here, we demonstrate the significantly enhanced light-output efficiency and suppressed efficiency droop in GaN microwire (MW)-based p-n junction ultraviolet light-emitting diode (UV LED) by the piezo-phototronic effect. By applying a -0.12% static compressive strain perpendicular to the p-n junction interface, the relative external quantum efficiency of the LED is enhanced by over 600%. Furthermore, efficiency droop is markedly reduced from 46.6% to 7.5% and corresponding droop onset current density shifts from 10 to 26.7 A cm -2 . Enhanced electrons confinement and improved holes injection efficiency by the piezo-phototronic effect are revealed and theoretically confirmed as the physical mechanisms. This study offers an unconventional path to develop high efficiency, strong brightness and high power III-nitride light sources.

Deterministic optical polarisation in nitride quantum dots at thermoelectrically cooled temperatures.

PubMed

Wang, Tong; Puchtler, Tim J; Patra, Saroj K; Zhu, Tongtong; Jarman, John C; Oliver, Rachel A; Schulz, Stefan; Taylor, Robert A

2017-09-21

We report the successful realisation of intrinsic optical polarisation control by growth, in solid-state quantum dots in the thermoelectrically cooled temperature regime (≥200 K), using a non-polar InGaN system. With statistically significant experimental data from cryogenic to high temperatures, we show that the average polarisation degree of such a system remains constant at around 0.90, below 100 K, and decreases very slowly at higher temperatures until reaching 0.77 at 200 K, with an unchanged polarisation axis determined by the material crystallography. A combination of Fermi-Dirac statistics and k·p theory with consideration of quantum dot anisotropy allows us to elucidate the origin of the robust, almost temperature-insensitive polarisation properties of this system from a fundamental perspective, producing results in very good agreement with the experimental findings. This work demonstrates that optical polarisation control can be achieved in solid-state quantum dots at thermoelectrically cooled temperatures, thereby opening the possibility of polarisation-based quantum dot applications in on-chip conditions.

Room temperature solid-state quantum emitters in the telecom range.

PubMed

Zhou, Yu; Wang, Ziyu; Rasmita, Abdullah; Kim, Sejeong; Berhane, Amanuel; Bodrog, Zoltán; Adamo, Giorgio; Gali, Adam; Aharonovich, Igor; Gao, Wei-Bo

2018-03-01

On-demand, single-photon emitters (SPEs) play a key role across a broad range of quantum technologies. In quantum networks and quantum key distribution protocols, where photons are used as flying qubits, telecom wavelength operation is preferred because of the reduced fiber loss. However, despite the tremendous efforts to develop various triggered SPE platforms, a robust source of triggered SPEs operating at room temperature and the telecom wavelength is still missing. We report a triggered, optically stable, room temperature solid-state SPE operating at telecom wavelengths. The emitters exhibit high photon purity (~5% multiphoton events) and a record-high brightness of ~1.5 MHz. The emission is attributed to localized defects in a gallium nitride (GaN) crystal. The high-performance SPEs embedded in a technologically mature semiconductor are promising for on-chip quantum simulators and practical quantum communication technologies.

Sol processing of conjugated carbon nitride powders for thin-film fabrication.

PubMed

Zhang, Jinshui; Zhang, Mingwen; Lin, Lihua; Wang, Xinchen

2015-05-18

The chemical protonation of graphitic carbon nitride (CN) solids with strong oxidizing acids, for example HNO3, is demonstrated as an efficient pathway for the sol processing of a stable CN colloidal suspension, which can be translated into thin films by dip/disperse-coating techniques. The unique features of CN colloids, such as the polymeric matrix and the reversible hydrogen bonding, result in the thin-film electrodes derived from the sol solution exhibiting a high mechanical stability with improved conductivity for charge transport, and thus show a remarkably enhanced photo-electrochemical performance. The polymer system can in principle be broadly tuned by hybridization with desired functionalities, thus paving the way for the application of CN for specific tasks, as exemplified here by coupling with carbon nanotubes. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Polymeric carbon nitride nanomesh as an efficient and durable metal-free catalyst for oxidative desulfurization.

PubMed

Shen, Lijuan; Lei, Ganchang; Fang, Yuanxing; Cao, Yanning; Wang, Xinchen; Jiang, Lilong

2018-03-06

We report the first use of polymeric carbon nitride (CN) for the catalytic selective oxidation of H 2 S. The as-prepared CN with unique ultrathin "nanomeshes" structure exhibits excellent H 2 S conversion and high S selectivity. In particular, the CN nanomesh also displays better durability in the desulfurization reaction than traditional catalysts, such as carbon- and iron-based materials.

Auger electron spectroscopy analysis for growth interface of cubic boron nitride single crystals synthesized under high pressure and high temperature

NASA Astrophysics Data System (ADS)

Lv, Meizhe; Xu, Bin; Cai, Lichao; Guo, Xiaofei; Yuan, Xingdong

2018-05-01

After rapid cooling, cubic boron nitride (c-BN) single crystals synthesized under high pressure and high temperature (HPHT) are wrapped in the white film powders which are defined as growth interface. In order to make clear that the transition mechanism of c-BN single crystals, the variation of B and N atomic hybrid states in the growth interface is analyzed with the help of auger electron spectroscopy in the Li-based system. It is found that the sp2 fractions of B and N atoms decreases, and their sp3 fractions increases from the outer to the inner in the growth interface. In addition, Lithium nitride (Li3N) are not found in the growth interface by X-ray diffraction (XRD) experiment. It is suggested that lithium boron nitride (Li3BN2) is produced by the reaction of hexagonal boron nitride (h-BN) and Li3N at the first step, and then B and N atoms transform from sp2 into sp3 state with the catalysis of Li3BN2 in c-BN single crystals synthesis process.

Shockwave Processing of Composite Boron and Titanium Nitride Powders

NASA Astrophysics Data System (ADS)

Beason, Matthew T.; Gunduz, I. Emre; Mukasyan, Alexander S.; Son, Steven F.

2015-06-01

Shockwave processing of powders has been shown to initiate reactions between condensed phase reactants. It has been observed that these reactions can occur at very short timescales, resulting in chemical reactions occurring at a high pressure state. These reactions have the potential to produce metastable phases. Kinetic limitations prevent gaseous reactants from being used in this type of synthesis reaction. To overcome this limitation, a solid source of gaseous reactants must be used. An example of this type of reaction is the nitrogen exchange reaction (e.g. B + TiN, B + Si3N4 etc.). In these reactions nitrogen is ``carried'' by a material that can be then reduced by the second reactant. This work explores the possibility of using nitrogen exchange reactions to synthesize the cubic phase of boron nitride (c-BN) through shockwave processing of ball milled mixtures of boron and titanium nitride. The heating from the passage of the shock wave (pore collapse, plastic work, etc.) combined with thermochemical energy from the reaction may provide a means to synthesize c-BN. This material is based upon work supported by the Department of Energy, National Nuclear Security Administration, under Award Number(s) DE-NA0002377. National Defense Science & Engineering Graduate Fellowship (NDSEG), 32 CFR 168a.

All-Solid-State UV Transmitter Development for Ozone Sensing Applications

NASA Technical Reports Server (NTRS)

Prasad, Narasimha S.; Singh, Upendra N.; Armstrong, Darrell Jr.

2009-01-01

In this paper, recent progress made in the development of an all-solid-state UV transmitter suitable for ozone sensing applications from space based platforms is discussed. A nonlinear optics based UV setup based on Rotated Image Singly Resonant Twisted Rectangle (RISTRA) optical parametric oscillator (OPO) module was effectively coupled to a diode pumped, single longitudinal mode, conductively cooled, short-pulsed, high-energy Nd:YAG laser operating at 1064 nm with 50 Hz PRF. An estimated 10 mJ/pulse with 10% conversion efficiency at 320 nm has been demonstrated limited only by the pump pulse spatial profile. The current arrangement has the potential for obtaining greater than 200 mJ/pulse. Previously, using a flash-lamp pumped Nd:YAG laser with round, top-hat profile, up to 24% IR-UV conversion efficiency was achieved with the same UV module. Efforts are underway to increase the IR-UV conversion efficiency of the all solid-state setup by modifying the pump laser spatial profile along with incorporating improved OPO crystals.

Mechanochemical route to the synthesis of nanostructured Aluminium nitride

PubMed Central

Rounaghi, S. A.; Eshghi, H.; Scudino, S.; Vyalikh, A.; Vanpoucke, D. E. P.; Gruner, W.; Oswald, S.; Kiani Rashid, A. R.; Samadi Khoshkhoo, M.; Scheler, U.; Eckert, J.

2016-01-01

Hexagonal Aluminium nitride (h-AlN) is an important wide-bandgap semiconductor material which is conventionally fabricated by high temperature carbothermal reduction of alumina under toxic ammonia atmosphere. Here we report a simple, low cost and potentially scalable mechanochemical procedure for the green synthesis of nanostructured h-AlN from a powder mixture of Aluminium and melamine precursors. A combination of experimental and theoretical techniques has been employed to provide comprehensive mechanistic insights on the reactivity of melamine, solid state metal-organic interactions and the structural transformation of Al to h-AlN under non-equilibrium ball milling conditions. The results reveal that melamine is adsorbed through the amine groups on the Aluminium surface due to the long-range van der Waals forces. The high energy provided by milling leads to the deammoniation of melamine at the initial stages followed by the polymerization and formation of a carbon nitride network, by the decomposition of the amine groups and, finally, by the subsequent diffusion of nitrogen into the Aluminium structure to form h-AlN. PMID:27650956

A CMOS enhanced solid-state nanopore based single molecule detection platform.

PubMed

Chen, Chinhsuan; Yemenicioglu, Sukru; Uddin, Ashfaque; Corgliano, Ellie; Theogarajan, Luke

2013-01-01

Solid-state nanopores have emerged as a single molecule label-free electronic detection platform. Existing transimpedance stages used to measure ionic current nanopores suffer from dynamic range limitations resulting from steady-state baseline currents. We propose a digitally-assisted baseline cancellation CMOS platform that circumvents this issue. Since baseline cancellation is a form of auto-zeroing, the 1/f noise of the system is also reduced. Our proposed design can tolerate a steady state baseline current of 10µA and has a usable bandwidth of 750kHz. Quantitative DNA translocation experiments on 5kbp DNA was performed using a 5nm silicon nitride pore using both the CMOS platform and a commercial system. Comparison of event-count histograms show that the CMOS platform clearly outperforms the commercial system, allowing for unambiguous interpretation of the data.

Dry Lubrication of High Temperature Silicon Nitride Rolling Contacts.

DTIC Science & Technology

1980-11-01

comparable to M50 bearing steel [2]. Quality control measures were implemented in the areas of raw material inspection as well as non-destructive evaluation...to oil lubricated bearing steels . Due to the apparent success of graphite at high tem- perature, three vendors were selected that manufacture graph...hybrid bearings ( steel rings and silicon nitride balls) to establish solid lubricant/cage design practices. High temperature bearing tests with silicon

Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer

NASA Astrophysics Data System (ADS)

Prabaswara, Aditya; Min, Jung-Wook; Zhao, Chao; Janjua, Bilal; Zhang, Daliang; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; Ng, Tien Khee; Ooi, Boon S.

2018-02-01

Consumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge of integrating light emitters onto amorphous quartz by demonstrating the direct growth and fabrication of a III-nitride nanowire-based light-emitting diode. The proof-of-concept device exhibits a low turn-on voltage of 2.6 V, on an amorphous quartz substrate. We achieved 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits a broad linewidth spectrum of light centered at true yellow color ( 590 nm), an important wavelength bridging the green-gap in solid-state lighting technology, with significantly less strain and dislocations compared to conventional planar quantum well nitride structures. Our endeavor highlighted the feasibility of fabricating III-nitride optoelectronic device on a scalable amorphous substrate through facile growth and fabrication steps. For practical demonstration, we demonstrated tunable correlated color temperature white light, leveraging on the broadly tunable nanowire spectral characteristics across red-amber-yellow color regime.

Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer.

PubMed

Prabaswara, Aditya; Min, Jung-Wook; Zhao, Chao; Janjua, Bilal; Zhang, Daliang; Albadri, Abdulrahman M; Alyamani, Ahmed Y; Ng, Tien Khee; Ooi, Boon S

2018-02-06

Consumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge of integrating light emitters onto amorphous quartz by demonstrating the direct growth and fabrication of a III-nitride nanowire-based light-emitting diode. The proof-of-concept device exhibits a low turn-on voltage of 2.6 V, on an amorphous quartz substrate. We achieved ~ 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits a broad linewidth spectrum of light centered at true yellow color (~ 590 nm), an important wavelength bridging the green-gap in solid-state lighting technology, with significantly less strain and dislocations compared to conventional planar quantum well nitride structures. Our endeavor highlighted the feasibility of fabricating III-nitride optoelectronic device on a scalable amorphous substrate through facile growth and fabrication steps. For practical demonstration, we demonstrated tunable correlated color temperature white light, leveraging on the broadly tunable nanowire spectral characteristics across red-amber-yellow color regime.

GaN Nanowire Arrays for Efficient Optical Read-Out and Optoelectronic Control of NV Centers in Diamond.

PubMed

Hetzl, Martin; Wierzbowski, Jakob; Hoffmann, Theresa; Kraut, Max; Zuerbig, Verena; Nebel, Christoph E; Müller, Kai; Finley, Jonathan J; Stutzmann, Martin

2018-06-13

Solid-state quantum emitters embedded in a semiconductor crystal environment are potentially scalable platforms for quantum optical networks operated at room temperature. Prominent representatives are nitrogen-vacancy (NV) centers in diamond showing coherent entanglement and interference with each other. However, these emitters suffer from inefficient optical outcoupling from the diamond and from fluctuations of their charge state. Here, we demonstrate the implementation of regular n-type gallium nitride nanowire arrays on diamond as photonic waveguides to tailor the emission direction of surface-near NV centers and to electrically control their charge state in a p-i-n nanodiode. We show that the electrical excitation of single NV centers in such a diode can efficiently replace optical pumping. By the engineering of the array parameters, we find an optical read-out efficiency enhanced by a factor of 10 and predict a lateral NV-NV coupling 3 orders of magnitude stronger through evanescently coupled nanowire antennas compared to planar diamond not covered by nanowires, which opens up new possibilities for large-scale on-chip quantum-computing applications.

Solid state thermal rectifier

DOEpatents

None

2016-07-05

Thermal rectifiers using linear nanostructures as core thermal conductors have been fabricated. A high mass density material is added preferentially to one end of the nanostructures to produce an axially non-uniform mass distribution. The resulting nanoscale system conducts heat asymmetrically with greatest heat flow in the direction of decreasing mass density. Thermal rectification has been demonstrated for linear nanostructures that are electrical insulators, such as boron nitride nanotubes, and for nanostructures that are conductive, such as carbon nanotubes.

Two-dimensional nitrides as highly efficient potential candidates for CO2 capture and activation.

PubMed

Morales-Salvador, Raul; Morales-García, Ángel; Viñes, Francesc; Illas, Francesc

2018-06-13

The performance of novel two-dimensional nitrides in carbon capture and storage (CCS) is analyzed for a broad range of pressures and temperatures. Employing an integrated theoretical framework where CO2 adsorption/desorption rates on the M2N (M = Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W) surfaces are derived from transition state theory and density functional theory based calculations, the present theoretical simulations consistently predict that, depending on the particular composition, CO2 can be strongly adsorbed and even activated at temperatures above 1000 K. For practical purposes, Ti2N, Zr2N, Hf2N, V2N, Nb2N, and Ta2N are predicted as the best suited materials for CO2 activation. Moreover, the estimated CO2 uptake of 2.32-7.96 mol CO2 kg-1 reinforces the potential of these materials for CO2 abatement.

Room temperature solid-state quantum emitters in the telecom range

PubMed Central

Bodrog, Zoltán; Adamo, Giorgio; Gali, Adam

2018-01-01

On-demand, single-photon emitters (SPEs) play a key role across a broad range of quantum technologies. In quantum networks and quantum key distribution protocols, where photons are used as flying qubits, telecom wavelength operation is preferred because of the reduced fiber loss. However, despite the tremendous efforts to develop various triggered SPE platforms, a robust source of triggered SPEs operating at room temperature and the telecom wavelength is still missing. We report a triggered, optically stable, room temperature solid-state SPE operating at telecom wavelengths. The emitters exhibit high photon purity (~5% multiphoton events) and a record-high brightness of ~1.5 MHz. The emission is attributed to localized defects in a gallium nitride (GaN) crystal. The high-performance SPEs embedded in a technologically mature semiconductor are promising for on-chip quantum simulators and practical quantum communication technologies. PMID:29670945

Bulk Group-III Nitride Crystal Growth in Supercritical Ammonia-Sodium Solutions

NASA Astrophysics Data System (ADS)

Griffiths, Steven Herbert

Gallium nitride (GaN) and its alloys with indium nitride (InGaN) and aluminum nitride (AlGaN), collectively referred to as Group-III Nitride semiconductors, have enabled white solid-state lighting (SSL) sources and power electronic devices. While these technologies have already made a lasting, positive impact on society, improvements in design and efficiency are anticipated by shifting from heteroepitaxial growth on foreign substrates (such as sapphire, Si, SiC, etc.) to homoepitaxial growth on native, bulk GaN substrates. Bulk GaN has not supplanted foreign substrate materials due to the extreme conditions required to achieve a stoichiometric GaN melt (temperatures and pressures in excess of 2200°C and 6 GPa, respectively). The only method used to produce bulk GaN on an industrial scale is hydride vapor phase epitaxy (HVPE), but the high cost of gaseous precursors and relatively poor crystal quality have limited the adoption of this technology. A solution growth technique known as the ammonothermal method has attracted interest from academia and industry alike for its ability to produce bulk GaN boules of exceedingly high crystal quality. The ammonothermal method employs supercritical ammonia (NH3) solutions to dissolve, transport, and crystallize GaN. However, ammonothermal growth pressures are still relatively high (˜200 MPa), which has thus far prevented the acquisition of fundamental crystal growth knowledge needed to efficiently (i.e. through data-driven approaches) advance the field. This dissertation focused on addressing the gaps in the literature through two studies employing in situ fluid temperature analysis. The first study focused on identifying the solubility of GaN in supercritical NH3-Na solutions. The design and utilization of in situ and ex situ monitoring equipment enabled the first reports of the two-phase nature of supercritical NH3-Na solutions, and of Ga-alloying of Ni-containing autoclave components. The effects of these error sources on the gravimetric determination of GaN solubility were explored in detail. The second study was aimed at correlating autoclave dissolution and growth zone fluid temperatures with bulk GaN crystal growth kinetics, crystal quality, and impurity incorporation. The insights resulting from this analysis include the identification of the barrier between mass transport and surface integration-limited GaN growth regimes, GaN crystal shape evolution with fluid temperature, the sensitivity of (0001)-orientation crystal quality with fluid temperature, and impurity-specific incorporation activated from the dissolution and growth zones of the autoclave. The results of the aforementioned studies motivated a paradigm-shift in ammonothermal growth. To address this need, a fundamentally different crystal growth approach involving isothermal solutions and tailor-made Group-III alloy source materials was developed/demonstrated. This growth method enabled impurity incorporation reduction compared to traditional ammonothermal GaN growth, and the realization of bulk, ternary Group-III Nitride crystals.

Efficient Gate-tunable light-emitting device made of defective boron nitride nanotubes: from ultraviolet to the visible

PubMed Central

Attaccalite, Claudio; Wirtz, Ludger; Marini, Andrea; Rubio, Angel

2013-01-01

Boron nitride is a promising material for nanotechnology applications due to its two-dimensional graphene-like, insulating, and highly-resistant structure. Recently it has received a lot of attention as a substrate to grow and isolate graphene as well as for its intrinsic UV lasing response. Similar to carbon, one-dimensional boron nitride nanotubes (BNNTs) have been theoretically predicted and later synthesised. Here we use first principles simulations to unambiguously demonstrate that i) BN nanotubes inherit the highly efficient UV luminescence of hexagonal BN; ii) the application of an external perpendicular field closes the electronic gap keeping the UV lasing with lower yield; iii) defects in BNNTS are responsible for tunable light emission from the UV to the visible controlled by a transverse electric field (TEF). Our present findings pave the road towards optoelectronic applications of BN-nanotube-based devices that are simple to implement because they do not require any special doping or complex growth. PMID:24060843

A high open-circuit voltage gallium nitride betavoltaic microbattery

NASA Astrophysics Data System (ADS)

Cheng, Zaijun; Chen, Xuyuan; San, Haisheng; Feng, Zhihong; Liu, Bo

2012-07-01

A high open-circuit voltage betavoltaic microbattery based on a gallium nitride (GaN) p-i-n homojunction is demonstrated. As a beta-absorbing layer, the low electron concentration of the n-type GaN layer is achieved by the process of Fe compensation doping. Under the irradiation of a planar solid 63Ni source with activity of 0.5 mCi, the open-circuit voltage of the fabricated microbattery with 2 × 2 mm2 area reaches as much as 1.64 V, which is the record value reported for betavoltaic batteries with 63Ni source, the short-circuit current was measured as 568 pA and the conversion effective of 0.98% was obtained. The experimental results suggest that GaN is a high-potential candidate for developing the betavoltaic microbattery.

High Efficiency, 100 mJ per pulse, Nd:YAG Oscillator Optimized for Space-Based Earth and Planetary Remote Sensing

NASA Technical Reports Server (NTRS)

Coyle, D. Barry; Stysley, Paul R.; Poulios, Demetrios; Fredrickson, Robert M.; Kay, Richard B.; Cory, Kenneth C.

2014-01-01

We report on a newly solid state laser transmitter, designed and packaged for Earth and planetary space-based remote sensing applications for high efficiency, low part count, high pulse energy scalability/stability, and long life. Finally, we have completed a long term operational test which surpassed 2 Billion pulses with no measured decay in pulse energy.

Erosion-corrosion resistance properties of 316L austenitic stainless steels after low-temperature liquid nitriding

NASA Astrophysics Data System (ADS)

Zhang, Xiangfeng; Wang, Jun; Fan, Hongyuan; Pan, Dong

2018-05-01

The low-temperature liquid nitriding of stainless steels can result in the formation of a surface zone of so-called expanded austenite (S-phase) by the dissolution of large amounts of nitrogen in the solid solution and formation of a precipitate-free layer supersaturated with high hardness. Erosion-corrosion measurements were performed on low-temperature nitrided and non-nitrided 316L stainless steels. The total erosion-corrosion, erosion-only, and corrosion-only wastages were measured directly. As expected, it was shown that low-temperature nitriding dramatically reduces the degree of erosion-corrosion in stainless steels, caused by the impingement of particles in a corrosive medium. The nitrided 316L stainless steels exhibited an improvement of almost 84% in the erosion-corrosion resistance compared to their non-nitrided counterparts. The erosion-only rates and synergistic levels showed a general decline after low-temperature nitriding. Low-temperature liquid nitriding can not only reduce the weight loss due to erosion but also significantly reduce the weight loss rate of interactions, so that the total loss of material decreased evidently. Therefore, 316L stainless steels displayed excellent erosion-corrosion behaviors as a consequence of their highly favorable corrosion resistances and superior wear properties.

Low-temperature solid-state preparation of ternary CdS/g-C3N4/CuS nanocomposites for enhanced visible-light photocatalytic H2-production activity

NASA Astrophysics Data System (ADS)

Cheng, Feiyue; Yin, Hui; Xiang, Quanjun

2017-01-01

Low-temperature solid-state method were gradually demonstrated as a high efficiency, energy saving and environmental protection strategy to fabricate composite semiconductor materials. CdS-based multiple composite photocatalytic materials have attracted increasing concern owning to the heterostructure constituents with tunable band gaps. In this study, the ternary CdS/g-C3N4/CuS composite photocatalysts were prepared by a facile and novel low-temperature solid-state strategy. The optimal ternary CdS/g-C3N4/CuS composite exhibits a high visible-light photocatalytic H2-production rate of 57.56 μmol h-1 with the corresponding apparent quantum efficiency reaches 16.5% at 420 nm with Na2S/Na2SO3 mixed aqueous solution as sacrificial agent. The ternary CdS/g-C3N4/CuS composites show the enhanced visible-light photocatalytic H2-evolution activity comparing with the binary CdS-based composites or simplex CdS. The enhanced photocatalytic activity is ascribed to the heterojunctions and the synergistic effect of CuS and g-C3N4 in promotion of the charge separation and charge mobility. This work shows that the low-temperature solid-state method is efficient and environmentally benign for the preparation of CdS-based multiple composite photocatalytic materials with enhanced visible-light photocatalytic H2-production activity.

Characterizing AISI 1045 steel surface duplex-treated by alternating current field enhanced pack aluminizing and nitriding

NASA Astrophysics Data System (ADS)

Xie, Fei; Zhang, Ge; Pan, Jianwei

2018-02-01

Thin cases and long treating time are shortcomings of conventional duplex treatment of aluminizing followed by nitriding (DTAN). Alternating current field (ACF) enhanced DTAN was carried out on AISI 1045 steel by applying an ACF to treated samples and treating agents with a pair of electrodes for overcoming those shortcomings. By investigating cases' structures, phases, composition and hardness distributions of differently treated samples, preliminary studies were made on characterizations of the ACF enhanced duplex treatment to AISI 1045 steel. The results show that, with the help of the ACF, the surface Al-rich phase Al5Fe2 formed in conventional pack aluminizing can be easily avoided and the aluminizing process is dramatically promoted. The aluminizing case can be nitrided either with conventional pack nitriding or ACF enhanced pack nitriding. By applying ACF to pack nitriding, the diffusion of nitrogen into the aluminizing case is promoted. AlN, Fe2∼3N and solid solution of N in iron are efficiently formed as a result of reactions of N with the aluminizing case. A duplex treated case with an effective thickness of more than 170 μm can be obtained by the alternating current field enhanced 4 h pack aluminizing plus 4 h pack nitriding.

Fiber-based all-solid-state flexible supercapacitors for self-powered systems.

PubMed

Xiao, Xu; Li, Tianqi; Yang, Peihua; Gao, Yuan; Jin, Huanyu; Ni, Weijian; Zhan, Wenhui; Zhang, Xianghui; Cao, Yuanzhi; Zhong, Junwen; Gong, Li; Yen, Wen-Chun; Mai, Wenjie; Chen, Jian; Huo, Kaifu; Chueh, Yu-Lun; Wang, Zhong Lin; Zhou, Jun

2012-10-23

All-solid-state flexible supercapacitors based on a carbon/MnO(2) (C/M) core-shell fiber structure were fabricated with high electrochemical performance such as high rate capability with a scan rate up to 20 V s(-1), high volume capacitance of 2.5 F cm(-3), and an energy density of 2.2 × 10(-4) Wh cm(-3). By integrating with a triboelectric generator, supercapacitors could be charged and power commercial electronic devices, such as a liquid crystal display or a light-emitting-diode, demonstrating feasibility as an efficient storage component and self-powered micro/nanosystems.

Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grosso, Gabriele; Moon, Hyowon; Lienhard, Benjamin

Two-dimensional van der Waals materials have emerged as promising platforms for solid-state quantum information processing devices with unusual potential for heterogeneous assembly. Recently, bright and photostable single photon emitters were reported from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spectral distribution and reducing multi-photon emission presented open challenges. Here, we demonstrate that strain control allows spectral tunability of hBN single photon emitters over 6 meV, and material processing sharply improves the single photon purity. We observe high single photon count rates exceeding 7 × 10 6 counts per second at saturation, after correcting for uncorrelated photonmore » background. Furthermore, these emitters are stable to material transfer to other substrates. High-purity and photostable single photon emission at room temperature, together with spectral tunability and transferability, opens the door to scalable integration of high-quality quantum emitters in photonic quantum technologies.« less

Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride

DOE PAGES

Grosso, Gabriele; Moon, Hyowon; Lienhard, Benjamin; ...

2017-09-26

Two-dimensional van der Waals materials have emerged as promising platforms for solid-state quantum information processing devices with unusual potential for heterogeneous assembly. Recently, bright and photostable single photon emitters were reported from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spectral distribution and reducing multi-photon emission presented open challenges. Here, we demonstrate that strain control allows spectral tunability of hBN single photon emitters over 6 meV, and material processing sharply improves the single photon purity. We observe high single photon count rates exceeding 7 × 10 6 counts per second at saturation, after correcting for uncorrelated photonmore » background. Furthermore, these emitters are stable to material transfer to other substrates. High-purity and photostable single photon emission at room temperature, together with spectral tunability and transferability, opens the door to scalable integration of high-quality quantum emitters in photonic quantum technologies.« less

Effect of proton-conduction in electrolyte on electric efficiency of multi-stage solid oxide fuel cells

PubMed Central

Matsuzaki, Yoshio; Tachikawa, Yuya; Somekawa, Takaaki; Hatae, Toru; Matsumoto, Hiroshige; Taniguchi, Shunsuke; Sasaki, Kazunari

2015-01-01

Solid oxide fuel cells (SOFCs) are promising electrochemical devices that enable the highest fuel-to-electricity conversion efficiencies under high operating temperatures. The concept of multi-stage electrochemical oxidation using SOFCs has been proposed and studied over the past several decades for further improving the electrical efficiency. However, the improvement is limited by fuel dilution downstream of the fuel flow. Therefore, evolved technologies are required to achieve considerably higher electrical efficiencies. Here we present an innovative concept for a critically-high fuel-to-electricity conversion efficiency of up to 85% based on the lower heating value (LHV), in which a high-temperature multi-stage electrochemical oxidation is combined with a proton-conducting solid electrolyte. Switching a solid electrolyte material from a conventional oxide-ion conducting material to a proton-conducting material under the high-temperature multi-stage electrochemical oxidation mechanism has proven to be highly advantageous for the electrical efficiency. The DC efficiency of 85% (LHV) corresponds to a net AC efficiency of approximately 76% (LHV), where the net AC efficiency refers to the transmission-end AC efficiency. This evolved concept will yield a considerably higher efficiency with a much smaller generation capacity than the state-of-the-art several tens-of-MW-class most advanced combined cycle (MACC). PMID:26218470

Effect of proton-conduction in electrolyte on electric efficiency of multi-stage solid oxide fuel cells.

PubMed

Matsuzaki, Yoshio; Tachikawa, Yuya; Somekawa, Takaaki; Hatae, Toru; Matsumoto, Hiroshige; Taniguchi, Shunsuke; Sasaki, Kazunari

2015-07-28

Solid oxide fuel cells (SOFCs) are promising electrochemical devices that enable the highest fuel-to-electricity conversion efficiencies under high operating temperatures. The concept of multi-stage electrochemical oxidation using SOFCs has been proposed and studied over the past several decades for further improving the electrical efficiency. However, the improvement is limited by fuel dilution downstream of the fuel flow. Therefore, evolved technologies are required to achieve considerably higher electrical efficiencies. Here we present an innovative concept for a critically-high fuel-to-electricity conversion efficiency of up to 85% based on the lower heating value (LHV), in which a high-temperature multi-stage electrochemical oxidation is combined with a proton-conducting solid electrolyte. Switching a solid electrolyte material from a conventional oxide-ion conducting material to a proton-conducting material under the high-temperature multi-stage electrochemical oxidation mechanism has proven to be highly advantageous for the electrical efficiency. The DC efficiency of 85% (LHV) corresponds to a net AC efficiency of approximately 76% (LHV), where the net AC efficiency refers to the transmission-end AC efficiency. This evolved concept will yield a considerably higher efficiency with a much smaller generation capacity than the state-of-the-art several tens-of-MW-class most advanced combined cycle (MACC).

Reactively sputtered nickel nitride as electrocatalytic counter electrode for dye- and quantum dot-sensitized solar cells

NASA Astrophysics Data System (ADS)

Soo Kang, Jin; Park, Min-Ah; Kim, Jae-Yup; Ha Park, Sun; Young Chung, Dong; Yu, Seung-Ho; Kim, Jin; Park, Jongwoo; Choi, Jung-Woo; Jae Lee, Kyung; Jeong, Juwon; Jae Ko, Min; Ahn, Kwang-Soon; Sung, Yung-Eun

2015-05-01

Nickel nitride electrodes were prepared by reactive sputtering of nickel under a N2 atmosphere at room temperature for application in mesoscopic dye- or quantum dot- sensitized solar cells. This facile and reliable method led to the formation of a Ni2N film with a cauliflower-like nanostructure and tetrahedral crystal lattice. The prepared nickel nitride electrodes exhibited an excellent chemical stability toward both iodide and polysulfide redox electrolytes. Compared to conventional Pt electrodes, the nickel nitride electrodes showed an inferior electrocatalytic activity for the iodide redox electrolyte; however, it displayed a considerably superior electrocatalytic activity for the polysulfide redox electrolyte. As a result, compared to dye-sensitized solar cells (DSCs), with a conversion efficiency (η) = 7.62%, and CdSe-based quantum dot-sensitized solar cells (QDSCs, η = 2.01%) employing Pt counter electrodes (CEs), the nickel nitride CEs exhibited a lower conversion efficiency (η = 3.75%) when applied to DSCs, but an enhanced conversion efficiency (η = 2.80%) when applied to CdSe-based QDSCs.

Flexible all solid-state supercapacitors based on chemical vapor deposition derived graphene fibers.

PubMed

Li, Xinming; Zhao, Tianshuo; Chen, Qiao; Li, Peixu; Wang, Kunlin; Zhong, Minlin; Wei, Jinquan; Wu, Dehai; Wei, Bingqing; Zhu, Hongwei

2013-11-07

Flexible all-solid-state supercapacitors based on graphene fibers are demonstrated in this study. Surface-deposited oxide nanoparticles are used as pseudo-capacitor electrodes to achieve high capacitance. This supercapacitor electrode has an areal capacitance of 42 mF cm(-2), which is comparable to the capacitance for fiber-based supercapacitors reported to date. During the bending and cycling of the fiber-based supercapacitor, the stability could be maintained without sacrificing the electrochemical performance, which provides a novel and simple way to develop flexible, lightweight and efficient graphene-based devices.

Solid solution lithium alloy cermet anodes

DOEpatents

Richardson, Thomas J.

2013-07-09

A metal-ceramic composite ("cermet") has been produced by a chemical reaction between a lithium compound and another metal. The cermet has advantageous physical properties, high surface area relative to lithium metal or its alloys, and is easily formed into a desired shape. An example is the formation of a lithium-magnesium nitride cermet by reaction of lithium nitride with magnesium. The reaction results in magnesium nitride grains coated with a layer of lithium. The nitride is inert when used in a battery. It supports the metal in a high surface area form, while stabilizing the electrode with respect to dendrite formation. By using an excess of magnesium metal in the reaction process, a cermet of magnesium nitride is produced, coated with a lithium-magnesium alloy of any desired composition. This alloy inhibits dendrite formation by causing lithium deposited on its surface to diffuse under a chemical potential into the bulk of the alloy.

NASA satellite communications application research, phase 2 addendum. Efficient high power, solid state amplifier for EHF communications

NASA Technical Reports Server (NTRS)

Benet, James

1994-01-01

This document is an addendum to the NASA Satellite Communications Application Research (SCAR) Phase 2 Final Report, 'Efficient High Power, Solid State Amplifier for EHF Communications.' This report describes the work performed from 1 August 1993 to 11 March 1994, under contract number NASW-4513. During this reporting period an array of transistor amplifiers was repaired by replacing all MMIC amplifier chips. The amplifier array was then tested using three different feedhorn configurations. Descriptions, procedures, and results of this testing are presented in this report, and conclusions are drawn based on the test results obtained.

Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

NASA Astrophysics Data System (ADS)

Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

2016-01-01

In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa1-xN/GaN superlattice structure, by modulation doping of Mg in the AlxGa1-xN barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 1018 cm-3 has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports.

Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides.

PubMed

Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

2016-01-18

In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa(1-x)N/GaN superlattice structure, by modulation doping of Mg in the AlxGa(1-x)N barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 10(18) cm(-3) has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports.

A zwitterionic gel electrolyte for efficient solid-state supercapacitors

PubMed Central

Peng, Xu; Liu, Huili; Yin, Qin; Wu, Junchi; Chen, Pengzuo; Zhang, Guangzhao; Liu, Guangming; Wu, Changzheng; Xie, Yi

2016-01-01

Gel electrolytes have attracted increasing attention for solid-state supercapacitors. An ideal gel electrolyte usually requires a combination of advantages of high ion migration rate, reasonable mechanical strength and robust water retention ability at the solid state for ensuring excellent work durability. Here we report a zwitterionic gel electrolyte that successfully brings the synergic advantages of robust water retention ability and ion migration channels, manifesting in superior electrochemical performance. When applying the zwitterionic gel electrolyte, our graphene-based solid-state supercapacitor reaches a volume capacitance of 300.8 F cm−3 at 0.8 A cm−3 with a rate capacity of only 14.9% capacitance loss as the current density increases from 0.8 to 20 A cm−3, representing the best value among the previously reported graphene-based solid-state supercapacitors, to the best of our knowledge. We anticipate that zwitterionic gel electrolyte may be developed as a gel electrolyte in solid-state supercapacitors. PMID:27225484

Broadband wavelength conversion in hydrogenated amorphous silicon waveguide with silicon nitride layer

NASA Astrophysics Data System (ADS)

Wang, Jiang; Li, Yongfang; Wang, Zhaolu; Han, Jing; Huang, Nan; Liu, Hongjun

2018-01-01

Broadband wavelength conversion based on degenerate four-wave mixing is theoretically investigated in a hydrogenated amorphous silicon (a-Si:H) waveguide with silicon nitride inter-cladding layer (a-Si:HN). We have found that enhancement of the non-linear effect of a-Si:H waveguide nitride intermediate layer facilitates broadband wavelength conversion. Conversion bandwidth of 490 nm and conversion efficiency of 11.4 dB were achieved in a numerical simulation of a 4 mm-long a-Si:HN waveguide under 1.55 μm continuous wave pumping. This broadband continuous-wave wavelength converter has potential applications in photonic networks, a type of readily manufactured low-cost highly integrated optical circuits.

Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dauber, Jan; Stampfer, Christoph; Peter Grünberg Institute

2015-05-11

The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50more » nT/√(Hz) making our graphene sensors highly interesting for industrial applications.« less

Design and synthesis of a crystalline LiPON electrolyte

NASA Astrophysics Data System (ADS)

Holzwarth, N. A. W.; Senevirathne, Keerthi; Day, Cynthia S.; Lachgar, Abdessadek; Gross, Michael D.

2013-03-01

In the course of a computation study of the broad class of lithium phosphorus oxy-nitride materials of interest for solid electrolyte applications, Du and Holzwarth, [2] recently predicted a stable crystalline material with the stoichiometry Li2PO2N. The present paper reports the experimental preparation of the material using high temperature solid state synthesis and reports the results of experimental and calculational characterization studies. The so-named SD -Li2PO2N crystal structure has the orthorhombic space group Cmc21 with lattice constants a=9.0692(4) Å, b=5.3999(2) Å, and c=4.6856(2) Å. The structure is similar but not identical to the predicted structure, characterized by parallel arrangements of anionic phosphorus oxy-nitride chains having planar P -N -P -N backbones. Nitrogen 2p π states contribute to the strong bonding and to the chemical and thermal stablility of the material in air up to 600° C and in vacuum up to 1050° C. The measured Arrhenius activation energy for ionic conductivity is 0.6 eV which is comparable to computed vacancy migration energies in the presence of a significant population of Li+ ion vacancies. Supported by NSF grant DMR-1105485 and by a grnat from the Wake Forest University Center for Energy, Environment, and Sustainability.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petach, Trevor A.; Reich, Konstantin V.; Zhang, Xiao

Ionic liquid gating has a number of advantages over solid-state gating, especially for flexible or transparent devices and for applications requiring high carrier densities. But, the large number of charged ions near the channel inevitably results in Coulomb scattering, which limits the carrier mobility in otherwise clean systems. We develop a model for this Coulomb scattering. We then validate our model experimentally using ionic liquid gating of graphene across varying thicknesses of hexagonal boron nitride, demonstrating that disorder in the bulk ionic liquid often dominates the scattering.

Silicon surface passivation by silicon nitride deposition

NASA Technical Reports Server (NTRS)

Olsen, L. C.

1984-01-01

Silicon nitride deposition was studied as a method of passivation for silicon solar cell surfaces. The following three objectives were the thrust of the research: (1) the use of pecvd silicon nitride for passivation of silicon surfaces; (2) measurement techniques for surface recombination velocity; and (3) the importance of surface passivation to high efficiency solar cells.

Detecting the Length of Double-stranded DNA with Solid State Nanopores

NASA Astrophysics Data System (ADS)

Li, Jiali; Gershow, Marc; Stein, Derek; Qun, Cai; Brandin, Eric; Wang, Hui; Huang, Albert; Branton, Dan; Golovchenko, Jene

2003-03-01

We report on the use of nanometer scale diameter, solid-state nanopores as single molecule detectors of double stranded DNA molecules. These solid-state nanopores are fabricated in thin membranes of silicon nitride, by ion beam sculpting 1. They produce discrete electronic signals: current blockages, when an electrically biased nanopore is exposed to DNA molecules in aqueous salt solutions. We demonstrate examples of such electronic signals for 3k base pairs (bp) and 10k bp double stranded DNA molecules, which suggest that these molecules are individually translocating through the nanopore during the detection process. The translocating time for the 10k bp double stranded DNA is about 3 times longer than the 3k bp, demonstrating that a solid-state nanopore device can be used to detect the lengths of double stranded DNA molecules. Similarities and differences with signals obtained from single stranded DNA in a biological nanopores are discussed 2. 1. Li, J., Stein, D., McMullan, C., Branton, D. Aziz, M. J. and Golovchenko, J. Ion Beam Sculpting at nanometer length scales. Nature 412, 166-169 (2001). 2. Meller, A., L. Nivon, E. Brandin, Golovchenko, J. & Branton, D. Proc. Natl. Acad. Sci. USA 97, 1079-1084 (2000).

Comment on ``Equation of state of aluminum nitride and its shock response'' [J. Appl. Phys. 76, 4077 (1994)

NASA Astrophysics Data System (ADS)

Rosenberg, Z.; Brar, N. S.

1995-11-01

A recent article by Dandekar, Abbate, and Frankel [J. Appl. Phys. 76, 4077 (1994)] reviews existing data on high-pressure properties of aluminum nitride (AlN) in an effort to build an equation of state for this material. A rather large portion of that article is devoted to the shear strength of AlN and, in particular, to our data of 1991 with longitudinal and lateral stress gauges [Z. Rosenberg, N. S. Brar, and S. J. Bless, J. Appl. Phys. 70, 167 (1991)]. Since our highest data point has an error of 1 GPa, much of the discussion and conclusions of Dandekar and co-workers are not relevant once this error in data reduction is corrected. We also discuss the relevance of our shear strength data for various issues, such as the phase transformation of AlN at 20 GPa and the general shape of Hugoniot curves for brittle solids.

Synthesis of POSS-based ionic conductors with low glass transition temperatures for efficient solid-state dye-sensitized solar cells.

PubMed

Zhang, Wei; Wang, Zhong-Sheng

2014-07-09

Replacing liquid-state electrolytes with solid-state electrolytes has been proven to be an effective way to improve the durability of dye-sensitized solar cells (DSSCs). We report herein the synthesis of amorphous ionic conductors based on polyhedral oligomeric silsesquioxane (POSS) with low glass transition temperatures for solid-state DSSCs. As the ionic conductor is amorphous and in the elastomeric state at the operating temperature of DSSCs, good pore filling in the TiO2 film and good interfacial contact between the solid-state electrolyte and the TiO2 film can be guaranteed. When the POSS-based ionic conductor containing an allyl group is doped with only iodine as the solid-state electrolyte without any other additives, power conversion efficiency of 6.29% has been achieved with good long-term stability under one-sun soaking for 1000 h.

COATED CARBON ELEMENT FOR USE IN NUCLEAR REACTORS AND THE PROCESS OF MAKING THE ELEMENT

DOEpatents

Pyle, R.J.; Allen, G.L.

1963-01-15

S>This patent relates to a carbide-nitride-carbide coating for carbon bodies that are to be subjected to a high temperature nuclear reactor atmosphere, and a method of applying the same. This coating is a highly efficient diffusion barrier and protects the C body from corrosion and erosion by the reactor atmosphere. Preferably, the innermost coating is Zr carbide, the middle coatlng is Zr nitride, and the outermost coating is a mixture of Zr and Nb carbide. The nitride coating acts as a diffusion barrier, while the innermost carbide bonds the nitride to the C body and prevents deleterious reaction between the nitride and C body. The outermost carbide coating protects the nitride coating from the reactor atmosphere. (AEC)

Topochemical approach to efficiently produce main-chain poly(bile acid)s with high molecular weights.

PubMed

Li, Weina; Li, Xuesong; Zhu, Wei; Li, Changxu; Xu, Dan; Ju, Yong; Li, Guangtao

2011-07-21

Based on a topochemical approach, a strategy for efficiently producing main-chain poly(bile acid)s in the solid state was developed. This strategy allows for facile and scalable synthesis of main-chain poly(bile acid)s not only with high molecular weights, but also with quantitative conversions and yields.

Coherent Doppler lidar for automated space vehicle, rendezvous, station-keeping and capture

NASA Technical Reports Server (NTRS)

Dunkin, James A.

1991-01-01

Recent advances in eye-safe, short wavelength solid-state lasers offer real potential for the development of compact, reliable, light-weight, efficient coherent lidar. Laser diode pumping of these devices has been demonstrated, thereby eliminating the need for flash lamp pumping, which has been a major drawback to the use of these lasers in space based applications. Also these lasers now have the frequency stability required to make them useful in coherent lidar, which offers all of the advantages of non-coherent lidar, but with the additional advantage that direct determination of target velocity is possible by measurement of the Doppler shift. By combining the Doppler velocity measurement capability with the inherent high angular resolution and range accuracy of lidar it is possible to construct Doppler images of targets for target motion assessment. A coherent lidar based on a Tm,Ho:YAG 2-micrometer wavelength laser was constructed and successfully field tested on atmospheric targets in 1990. This lidar incorporated an all solid state (laser diode pumped) master oscillator, in conjunction with a flash lamp pumped slave oscillator. Solid-state laser technology is rapidly advancing, and with the advent of high efficiency, high power, semiconductor laser diodes as pump sources, all-solid-state, coherent lidars are a real possibility in the near future. MSFC currently has a feasibility demonstration effort under way which will involve component testing, and preliminary design of an all-solid-state, coherent lidar for automatic rendezvous, and capture. This two year effort, funded by the Director's Discretionary Fund is due for completion in 1992.

229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

NASA Astrophysics Data System (ADS)

Liu, Dong; Cho, Sang June; Park, Jeongpil; Seo, Jung-Hun; Dalmau, Rafael; Zhao, Deyin; Kim, Kwangeun; Gong, Jiarui; Kim, Munho; Lee, In-Kyu; Albrecht, John D.; Zhou, Weidong; Moody, Baxter; Ma, Zhenqiang

2018-02-01

AlGaN based 229 nm light emitting diodes (LEDs), employing p-type Si to significantly increase hole injection, were fabricated on single crystal bulk aluminum nitride (AlN) substrates. Nitride heterostructures were epitaxially deposited by organometallic vapor phase epitaxy and inherit the low dislocation density of the native substrate. Following epitaxy, a p-Si layer is bonded to the heterostructure. LEDs were characterized both electrically and optically. Owing to the low defect density films, large concentration of holes from p-Si, and efficient hole injection, no efficiency droop was observed up to a current density of 76 A/cm2 under continuous wave operation and without external thermal management. An optical output power of 160 μW was obtained with the corresponding external quantum efficiency of 0.03%. This study demonstrates that by adopting p-type Si nanomembrane contacts as a hole injector, practical levels of hole injection can be realized in UV light-emitting diodes with very high Al composition AlGaN quantum wells, enabling emission wavelengths and power levels that were previously inaccessible using traditional p-i-n structures with poor hole injection efficiency.

Intrinsic ferromagnetism in hexagonal boron nitride nanosheets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Si, M. S.; Gao, Daqiang, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn; Yang, Dezheng

2014-05-28

Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized π states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstratemore » such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.« less

The physics of solid-state neutron detector materials and geometries.

PubMed

Caruso, A N

2010-11-10

Detection of neutrons, at high total efficiency, with greater resolution in kinetic energy, time and/or real-space position, is fundamental to the advance of subfields within nuclear medicine, high-energy physics, non-proliferation of special nuclear materials, astrophysics, structural biology and chemistry, magnetism and nuclear energy. Clever indirect-conversion geometries, interaction/transport calculations and modern processing methods for silicon and gallium arsenide allow for the realization of moderate- to high-efficiency neutron detectors as a result of low defect concentrations, tuned reaction product ranges, enhanced effective omnidirectional cross sections and reduced electron-hole pair recombination from more physically abrupt and electronically engineered interfaces. Conversely, semiconductors with high neutron cross sections and unique transduction mechanisms capable of achieving very high total efficiency are gaining greater recognition despite the relative immaturity of their growth, lithographic processing and electronic structure understanding. This review focuses on advances and challenges in charged-particle-based device geometries, materials and associated mechanisms for direct and indirect transduction of thermal to fast neutrons within the context of application. Calorimetry- and radioluminescence-based intermediate processes in the solid state are not included.

Spherical boron nitride particles and method for preparing them

DOEpatents

Phillips, Jonathan; Gleiman, Seth S.; Chen, Chun-Ku

2003-11-25

Spherical and polyhedral particles of boron nitride and method of preparing them. Spherical and polyhedral particles of boron nitride are produced from precursor particles of hexagonal phase boron nitride suspended in an aerosol gas. The aerosol is directed to a microwave plasma torch. The torch generates plasma at atmospheric pressure that includes nitrogen atoms. The presence of nitrogen atoms is critical in allowing boron nitride to melt at atmospheric pressure while avoiding or at least minimizing decomposition. The plasma includes a plasma hot zone, which is a portion of the plasma that has a temperature sufficiently high to melt hexagonal phase boron nitride. In the hot zone, the precursor particles melt to form molten particles that acquire spherical and polyhedral shapes. These molten particles exit the hot zone, cool, and solidify to form solid particles of boron nitride with spherical and polyhedral shapes. The molten particles can also collide and join to form larger molten particles that lead to larger spherical and polyhedral particles.

Waste conversion into high-value ceramics: Carbothermal nitridation synthesis of titanium nitride nanoparticles using automotive shredder waste.

PubMed

Mayyas, Mohannad; Pahlevani, Farshid; Maroufi, Samane; Liu, Zhao; Sahajwalla, Veena

2017-03-01

Environmental concern about automotive shredder residue (ASR) has increased in recent years due to its harmful content of heavy metals. Although several approaches of ASR management have been suggested, these approaches remain commercially unproven. This study presents an alternative approach for ASR management where advanced materials can be generated as a by-product. In this approach, titanium nitride (TiN) has been thermally synthesized by nitriding pressed mixture of automotive shredder residue (ASR) and titanium oxide (TiO 2 ). Interactions between TiO 2 and ASR at non-isothermal conditions were primarily investigated using thermogravimetric analysis (TGA) and differential scanning calorimetry. Results indicated that TiO 2 influences and catalyses degradation reactions of ASR, and the temperature, at which reduction starts, was determined around 980 °C. The interaction between TiO 2 and ASR at isothermal conditions in the temperature range between 1200 and 1550 °C was also studied. The pressed mixture of both materials resulted in titanium nitride (TiN) ceramic at all given temperatures. Formation kinetics were extracted using several models for product layer diffusion-controlled solid-solid and solid-fluid reactions. The effect of reactants ratio and temperature on the degree of conversion and morphology was investigated. The effect of reactants ratio was found to have considerable effect on the morphology of the resulting material, while temperature had a lesser impact. Several unique structures of TiN (porous nanostructured, polycrystalline, micro-spherical and nano-sized structures) were obtained by simply tuning the ratio of TiO 2 to ASR, and a product with appreciable TiN content of around 85% was achieved after only one hour nitridation at 1550 °C. Copyright © 2016 Elsevier Ltd. All rights reserved.

Solid state RF power: The route to 1W per euro cent

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heid, Oliver

2013-04-19

In most particle accelerators RF power is a decisive design constraint due to high costs and relative inflexibility of current electron beam based RF sources, i.e. Klystrons, Magnetrons, Tetrodes etc. At VHF/UHF frequencies the transition to solid state devices promises to fundamentally change the situation. Recent progress brings 1 Watt per Euro cent installed cost within reach. We present a Silicon Carbide semiconductor solution utilising the Solid State Direct Drive technology at unprecedented efficiency, power levels and power densities. The proposed solution allows retrofitting of existing RF accelerators and opens the route to novel particle accelerator concepts.

GaN Based Electronics And Their Applications

NASA Astrophysics Data System (ADS)

Ren, Fan

2002-03-01

The Group III-nitrides were initially researched for their promise to fill the void for a blue solid state light emitter. Electronic devices from III-nitrides have been a more recent phenomenon. The thermal conductivity of GaN is three times that of GaAs. For high power or high temperature applications, good thermal conductivity is imperative for heat removal or sustained operation at elevated temperatures. The development of III-N and other wide bandgap technologies for high temperature applications will likely take place at the expense of competing technologies, such as silicon-on-insulator (SOI), at moderate temperatures. At higher temperatures (>300°C), novel devices and components will become possible. The automotive industry will likely be one of the largest markets for such high temperature electronics. One of the most noteworthy advantages for III-N materials over other wide bandgap semiconductors is the availability of AlGaN/GaN and InGaN/GaN heterostructures. A 2-dimensional electron gas (2DEG) has been shown to exist at the AlGaN/GaN interface, and heterostructure field effect transistors (HFETs) from these materials can exhibit 2DEG mobilities approaching 2000 cm2 / V?s at 300K. Power handling capabilities of 12 W/mm appear feasible, and extraordinary large signal performance has already been demonstrated, with a current state-of-the-art of >10W/mm at X-band. In this talk, high speed and high temperature AlGaN/GaN HEMTs as well as MOSHEMTs, high breakdown voltage GaN (>6KV) and AlGaN (9.7 KV) Schottky diodes, and their applications will be presented.

Efficient scalable solid-state neutron detector.

PubMed

Moses, Daniel

2015-06-01

We report on scalable solid-state neutron detector system that is specifically designed to yield high thermal neutron detection sensitivity. The basic detector unit in this system is made of a (6)Li foil coupled to two crystalline silicon diodes. The theoretical intrinsic efficiency of a detector-unit is 23.8% and that of detector element comprising a stack of five detector-units is 60%. Based on the measured performance of this detector-unit, the performance of a detector system comprising a planar array of detector elements, scaled to encompass effective area of 0.43 m(2), is estimated to yield the minimum absolute efficiency required of radiological portal monitors used in homeland security.

Measurement of DNA translocation dynamics in a solid-state nanopore at 100-ns temporal resolution

PubMed Central

Shekar, Siddharth; Niedzwiecki, David J.; Chien, Chen-Chi; Ong, Peijie; Fleischer, Daniel A.; Lin, Jianxun; Rosenstein, Jacob K.; Drndic, Marija; Shepard, Kenneth L.

2017-01-01

Despite the potential for nanopores to be a platform for high-bandwidth study of single-molecule systems, ionic current measurements through nanopores have been limited in their temporal resolution by noise arising from poorly optimized measurement electronics and large parasitic capacitances in the nanopore membranes. Here, we present a complementary metal-oxide-semiconductor (CMOS) nanopore (CNP) amplifier capable of low noise recordings at an unprecedented 10 MHz bandwidth. When integrated with state-of-the-art solid-state nanopores in silicon nitride membranes, we achieve an SNR of greater than 10 for ssDNA translocations at a measurement bandwidth of 5 MHz, which represents the fastest ion current recordings through nanopores reported to date. We observe transient features in ssDNA translocation events that are as short as 200 ns, which are hidden even at bandwidths as high as 1 MHz. These features offer further insights into the translocation kinetics of molecules entering and exiting the pore. This platform highlights the advantages of high-bandwidth translocation measurements made possible by integrating nanopores and custom-designed electronics. PMID:27332998

Cycle Analysis of Two-stage Planar SOFC Power Generation by Series Connection of Low and High Temperature SOFCs

NASA Astrophysics Data System (ADS)

Ohba, Takahiro; Takezawa, Shinya; Araki, Takuto; Onda, Kazuo; Sakaki, Yoshinori

Solid Oxide Fuel Cell (SOFC) can be composed by solid components, and high power generation efficiency of a whole cycle is obtained by using high temperature exhaust heat for fuel reforming and bottoming power generation. Recently, the low temperature SOFC, which runs in the temperature range of around 600°C or above, has been developed with the high efficiency of power generation. On the other hand, multi-stage power generation system has been proposed by the United States DOE. In this study, a power generation system of two-stage SOFC by series connection of low and high temperature SOFCs has been studied. Overpotential data for low-temperature SOFC used in this study are based on recent published data, and those for high temperature SOFC arhaihe based on our previous study. The analytical results show the two-stage SOFC power generation efficiency of 50.3% and the total power generation efficiency of 56.1% under a standard operating condition.

Free vibration analysis of single-walled boron nitride nanotubes based on a computational mechanics framework

NASA Astrophysics Data System (ADS)

Yan, J. W.; Tong, L. H.; Xiang, Ping

2017-12-01

Free vibration behaviors of single-walled boron nitride nanotubes are investigated using a computational mechanics approach. Tersoff-Brenner potential is used to reflect atomic interaction between boron and nitrogen atoms. The higher-order Cauchy-Born rule is employed to establish the constitutive relationship for single-walled boron nitride nanotubes on the basis of higher-order gradient continuum theory. It bridges the gaps between the nanoscale lattice structures with a continuum body. A mesh-free modeling framework is constructed, using the moving Kriging interpolation which automatically satisfies the higher-order continuity, to implement numerical simulation in order to match the higher-order constitutive model. In comparison with conventional atomistic simulation methods, the established atomistic-continuum multi-scale approach possesses advantages in tackling atomic structures with high-accuracy and high-efficiency. Free vibration characteristics of single-walled boron nitride nanotubes with different boundary conditions, tube chiralities, lengths and radii are examined in case studies. In this research, it is pointed out that a critical radius exists for the evaluation of fundamental vibration frequencies of boron nitride nanotubes; opposite trends can be observed prior to and beyond the critical radius. Simulation results are presented and discussed.

The Physics and Chemistry of carbides, Nitrides and Borides. Volume 185

DTIC Science & Technology

1990-01-01

and C-B-C chains [15,17]. Clearly, the use of boron-rich solids as electronic materials will place new demands on the quality of materials. In this...first heated in a pyrolytic boron nitride (PBN) crucible ( Union Carbide Corp.) under high vacuum (< 50 mTorr) to 1900°C. This removed surface...contamination of the sample. The powders were loaded into a graphite die with a high-purity BN die liner ( Union Carbide Grade HBC) with inner diameter of 3/8

Europium (III) Organic Complexes in Porous Boron Nitride Microfibers: Efficient Hybrid Luminescent Material

NASA Astrophysics Data System (ADS)

Lin, Jing; Feng, Congcong; He, Xin; Wang, Weijia; Fang, Yi; Liu, Zhenya; Li, Jie; Tang, Chengchun; Huang, Yang

2016-09-01

We report the design and synthesis of a novel kind of organic-inorganic hybrid material via the incorporation of europium (III) β-diketonate complexes (Eu(TTA)3, TTA = 2-thenoyltrifluoroacetone) into one-dimensional (1D) porous boron nitride (BN) microfibers. The developed Eu(TTA)3@BN hybrid composites with typical 1D fibrous morphology exhibit bright visible red-light emission on UV illumination. The confinement of Eu(TTA)3 within pores of BN microfibers not only decreases the aggregation-caused quenching in solid Eu(TTA)3, but also improves their thermal stabilities. Moreover, The strong interactions between Eu(TTA)3 and porous BN matrix result in an interesting energy transfer process from BN host to TTA ligand and TTA ligand to Eu3+ ions, leading to the remarkable increase of red emission. The synthetic approach should be a very promising strategy which can be easily expanded to other hybrid luminescent materials based on porous BN.

Europium (III) Organic Complexes in Porous Boron Nitride Microfibers: Efficient Hybrid Luminescent Material

PubMed Central

Lin, Jing; Feng, Congcong; He, Xin; Wang, Weijia; Fang, Yi; Liu, Zhenya; Li, Jie; Tang, Chengchun; Huang, Yang

2016-01-01

We report the design and synthesis of a novel kind of organic-inorganic hybrid material via the incorporation of europium (III) β-diketonate complexes (Eu(TTA)3, TTA = 2-thenoyltrifluoroacetone) into one-dimensional (1D) porous boron nitride (BN) microfibers. The developed Eu(TTA)3@BN hybrid composites with typical 1D fibrous morphology exhibit bright visible red-light emission on UV illumination. The confinement of Eu(TTA)3 within pores of BN microfibers not only decreases the aggregation-caused quenching in solid Eu(TTA)3, but also improves their thermal stabilities. Moreover, The strong interactions between Eu(TTA)3 and porous BN matrix result in an interesting energy transfer process from BN host to TTA ligand and TTA ligand to Eu3+ ions, leading to the remarkable increase of red emission. The synthetic approach should be a very promising strategy which can be easily expanded to other hybrid luminescent materials based on porous BN. PMID:27687246

Quantum oscillations of nitrogen atoms in uranium nitride

NASA Astrophysics Data System (ADS)

Aczel, A. A.; Granroth, G. E.; MacDougall, G. J.; Buyers, W. J. L.; Abernathy, D. L.; Samolyuk, G. D.; Stocks, G. M.; Nagler, S. E.

2012-10-01

The vibrational excitations of crystalline solids corresponding to acoustic or optic one-phonon modes appear as sharp features in measurements such as neutron spectroscopy. In contrast, many-phonon excitations generally produce a complicated, weak and featureless response. Here we present time-of-flight neutron scattering measurements for the binary solid uranium nitride, showing well-defined, equally spaced, high-energy vibrational modes in addition to the usual phonons. The spectrum is that of a single atom, isotropic quantum harmonic oscillator and characterizes independent motions of light nitrogen atoms, each found in an octahedral cage of heavy uranium atoms. This is an unexpected and beautiful experimental realization of one of the fundamental, exactly solvable problems in quantum mechanics. There are also practical implications, as the oscillator modes must be accounted for in the design of generation IV nuclear reactors that plan to use uranium nitride as a fuel.

Quantum oscillations of nitrogen atoms in uranium nitride.

PubMed

Aczel, A A; Granroth, G E; Macdougall, G J; Buyers, W J L; Abernathy, D L; Samolyuk, G D; Stocks, G M; Nagler, S E

2012-01-01

The vibrational excitations of crystalline solids corresponding to acoustic or optic one-phonon modes appear as sharp features in measurements such as neutron spectroscopy. In contrast, many-phonon excitations generally produce a complicated, weak and featureless response. Here we present time-of-flight neutron scattering measurements for the binary solid uranium nitride, showing well-defined, equally spaced, high-energy vibrational modes in addition to the usual phonons. The spectrum is that of a single atom, isotropic quantum harmonic oscillator and characterizes independent motions of light nitrogen atoms, each found in an octahedral cage of heavy uranium atoms. This is an unexpected and beautiful experimental realization of one of the fundamental, exactly solvable problems in quantum mechanics. There are also practical implications, as the oscillator modes must be accounted for in the design of generation IV nuclear reactors that plan to use uranium nitride as a fuel.

Ultraflexible and tailorable all-solid-state supercapacitors using polyacrylamide-based hydrogel electrolyte with high ionic conductivity.

PubMed

Li, Huili; Lv, Tian; Li, Ning; Yao, Yao; Liu, Kai; Chen, Tao

2017-11-30

Hydrogels with high ionic conductivity consisting of a cross-linked polymer network swollen in water are very promising to be used as an electrolyte for all-solid-state supercapacitors. However, there are rather few flexible supercapacitors using ionic conducting hydrogel electrolytes reported to date. In this work, highly flexible and ionic conducting polyacrylamide hydrogels were synthesized through a simple approach. On using the ionic hydrogels as the electrolyte, the resulting supercapacitors not only exhibited a high specific capacitance but also showed a long self-discharge time (over 10 hours to the half of original open-circuit voltage) and a low leakage current. These newly-developed all-solid-state supercapacitors can be bent, knot, and kneaded for 5000 cycles without performance decay, suggesting excellent flexibility and mechanical stability. These all-solid-state supercapacitors can also be easily tailored into strip-like supercapacitors without a short circuit, which provides an efficient approach to fabricate wearable energy storage devices.

Plasmonic Control of Radiation and Absorption Processes in Semiconductor Quantum Dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paiella, Roberto; Moustakas, Theodore D.

This document reviews a research program funded by the DOE Office of Science, which has been focused on the control of radiation and absorption processes in semiconductor photonic materials (including III-nitride quantum wells and quantum dots), through the use of specially designed metallic nanoparticles (NPs). By virtue of their strongly confined plasmonic resonances (i.e., collective oscillations of the electron gas), these nanostructures can concentrate incident radiation into sub-wavelength “hot spots” of highly enhanced field intensity, thereby increasing optical absorption by suitably positioned absorbers. By reciprocity, the same NPs can also dramatically increase the spontaneous emission rate of radiating dipoles locatedmore » within their hot spots. The NPs can therefore be used as optical antennas to enhance the radiation output of the underlying active material and at the same time control the far-field pattern of the emitted light. The key accomplishments of the project include the demonstration of highly enhanced light emission efficiency as well as plasmonic collimation and beaming along geometrically tunable directions, using a variety of plasmonic excitations. Initial results showing the reverse functionality (i.e., plasmonic unidirectional absorption and photodetection) have also been generated with similar systems. Furthermore, a new paradigm for the near-field control of light emission has been introduced through rigorous theoretical studies, based on the use of gradient metasurfaces (i.e., optical nanoantenna arrays with spatially varying shape, size, and/or orientation). These activities have been complemented by materials development efforts aimed at the synthesis of suitable light-emitting samples by molecular beam epitaxy. In the course of these efforts, a novel technique for the growth of III-nitride quantum dots has also been developed (droplet heteroepitaxy), with several potential advantages in terms of compositional and geometrical control. The results of these studies provide fundamental new understanding of optical processes at the nanoscale, including near-field energy transfer between quantum emitters and photonic nanostructures, dissipation phenomena of plasmonic excitations, and radiation from nanoantennas. Furthermore, they may open the way to entirely new device concepts and applications, in a broad range of disciplines including optoelectronics, sensing, spectroscopy, photovoltaics, and quantum information science. A specific application of particularly strong relevance to the DOE mission is the development of energy efficient LED active materials for solid-state lighting, based on plasmonic enhancement effects.« less

Towards efficient solar hydrogen production by intercalated carbon nitride photocatalyst.

PubMed

Gao, Honglin; Yan, Shicheng; Wang, Jiajia; Huang, Yu An; Wang, Peng; Li, Zhaosheng; Zou, Zhigang

2013-11-07

The development of efficient photocatalytic material for converting solar energy to hydrogen energy as viable alternatives to fossil-fuel technologies is expected to revolutionize energy shortage and environment issues. However, to date, the low quantum yield for solar hydrogen production over photocatalysts has hindered advances in the practical applications of photocatalysis. Here, we show that a carbon nitride intercalation compound (CNIC) synthesized by a simple molten salt route is an efficient polymer photocatalyst with a high quantum yield. We found that coordinating the alkali metals into the C-N plane of carbon nitride will induce the un-uniform spatial charge distribution. The electrons are confined in the intercalated region while the holes are in the far intercalated region, which promoted efficient separation of photogenerated carriers. The donor-type alkali metal ions coordinating into the nitrogen pots of carbon nitrides increase the free carrier concentration and lead to the formation of novel nonradiative paths. This should favor improved transport of the photogenerated electron and hole and decrease the electron-hole recombination rate. As a result, the CNIC exhibits a quantum yield as high as 21.2% under 420 nm light irradiation for solar hydrogen production. Such high quantum yield opens up new opportunities for using cheap semiconducting polymers as energy transducers.

Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

PubMed Central

Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

2016-01-01

In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa1−xN/GaN superlattice structure, by modulation doping of Mg in the AlxGa1−xN barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 1018 cm−3 has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports. PMID:26777294

High efficiency and stability of quasi-solid-state dye-sensitized ZnO solar cells using graphene incorporated soluble polystyrene gel electrolytes

NASA Astrophysics Data System (ADS)

Bi, Shi-Qing; Meng, Fan-Li; Zheng, Yan-Zhen; Han, Xue; Tao, Xia; Chen, Jian-Feng

2014-12-01

We report on the preparation of highly effective composite electrolytes by combining the two-dimensional graphene (Gra) and soluble polystyrene (PS) nanobeads on Pt counter electrode for the quasi-solid-state electrolytes of ZnO based dye-sensitized solar cells (DSCs). Under an optimized Gra/electrolyte ratio of 12 mg mL-1, the ionic conductivity (σ) of Gra-PS electrolyte was significantly improved from 32.8 mS cm-1 to 39.8 mS cm-1. And the electrochemical impedance spectroscopy (EIS) analysis proved that the ZnO-DSC with the optimized composite electrolyte possessed the lowest impedance value. As a result, the overall power conversion efficiencies (PCEs) of quasi-solid-state ZnO-DSCs significantly enhanced to 5.08% from initial 4.09%. Moreover, the results of long-term stability assays showed that the gel-state Gra-PS ZnO-DSC could retain over 90% of its initial PCE after radiation of 1000 h under full sunlight outdoors. It is anticipated that this work may provide an effective way to increase the cell efficiency by the introduction of Gra into gel electrolyte as well as a great potential for practical application.

Novel gallium nitride based microwave noise and power heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Chumbes, Eduardo Martin

With the pioneering efforts of Isamu Akasaki of Meiji University and Shuji Nakamura of Nichia Chemical Industries in the late 1980's and early 1990's, the first long-lived candela-class blue and ultraviolet light emitting devices have finally come to fruition. Their success in conquering this Holy Grail in opto-electronics is due to their development of a new technology based remarkably on a class of semiconductor materials that has been practically ignored and overlooked by almost everyone for the past twenty years---the nitrides of Al, Ga and In and their alloys. The breakthroughs made from this new technology in the last decade of the 20th century has revolutionized and revitalized worldwide research and development efforts to the point where it is feasible for other important technologies such as high-density information storage, high-resolution full-color displays and efficient white light lamps and UV sensors to come much closer to realization. Equally important is the potential that this new technology can bring toward the development of efficient ultra-high power and high-temperature electronics that will revolutionize the aerospace and high-speed communication industries. Specifically, the large bandgap and strong polar properties of the group III-nitrides has at present allowed for the realization of simple doped and remarkably undoped AlGaN/GaN transistor structures on sapphire and SiC substrates with two-dimensional electron gas sheet densities significantly greater than that of conventional transistor structures based on GaAs and InP. This dissertation will look specifically at extending undoped AlGaN/GaN heterostructure field-effect transistors or HFETs towards more advanced system applications involving the integration of these devices onto a more advanced Si technology and looking at the feasibility of this integration. It will also address important issues similar devices on semi-insulating SiC substrates have in robust microwave low noise and linear amplification. Finally, it will look at incorporating high-temperature silicon nitride passivation as a key ingredient to developing a unique class of devices: metal-insulator-semiconductor field effect transistors or MISFETs as a means for providing efficient high power amplification without compromising performance associated with surface- and process-related dispersion. This dissertation will finally close with a brief outlook on the future outlook of these technologies.

Frequency stabilization of diode-laser-pumped solid state lasers

NASA Technical Reports Server (NTRS)

Byer, Robert L.

1988-01-01

The goal of the NASA Sunlite program is to fly two diode-laser-pumped solid-state lasers on the space shuttle and while doing so to perform a measurement of their frequency stability and temporal coherence. These measurements will be made by combining the outputs of the two lasers on an optical radiation detector and spectrally analyzing the beat note. Diode-laser-pumped solid-state lasers have several characteristics that will make them useful in space borne experiments. First, this laser has high electrical efficiency. Second, it is of a technology that enables scaling to higher powers in the future. Third, the laser can be made extremely reliable, which is crucial for many space based applications. Fourth, they are frequency and amplitude stable and have high temporal coherence. Diode-laser-pumped solid-state lasers are inherently efficient. Recent results have shown 59 percent slope efficiency for a diode-laser-pumped solid-state laser. As for reliability, the laser proposed should be capable of continuous operation. This is possible because the diode lasers can be remote from the solid state gain medium by coupling through optical fibers. Diode lasers are constructed with optical detectors for monitoring their output power built into their mounting case. A computer can actively monitor the output of each diode laser. If it sees any variation in the output power that might indicate a problem, the computer can turn off that diode laser and turn on a backup diode laser. As for stability requirements, it is now generally believed that any laser can be stabilized if the laser has a frequency actuator capable of tuning the laser frequency as far as it is likely to drift in a measurement time.

S-containing copolymer as cathode material in poly(ethylene oxide)-based all-solid-state Li-S batteries

NASA Astrophysics Data System (ADS)

Gracia, Ismael; Ben Youcef, Hicham; Judez, Xabier; Oteo, Uxue; Zhang, Heng; Li, Chunmei; Rodriguez-Martinez, Lide M.; Armand, Michel

2018-06-01

Inverse vulcanization copolymers (p(S-DVB)) from the radical polymerization of elemental sulfur and divinylbenzene (DVB) have been studied as cathode active materials in poly(ethylene oxide) (PEO)-based all-solid-state Li-S cells. The Li-S cell comprising the optimized p(S-DVB) cathode (80:20 w/w S/DVB ratio) and lithium bis(fluorosulfonyl)imide/PEO (LiFSI/PEO) electrolyte shows high specific capacity (ca. 800 mAh g-1) and high Coulombic efficiency for 50 cycles. Most importantly, polysulfide (PS) shuttle is highly mitigated due to the strong interactions of PS species with polymer backbone in p(S-DVB). This is demonstrated by the stable cycling of the p(S-DVB)-based cell using lithium bis(trifluoromethanesulfonyl)imide (LiTFSI)/PEO electrolyte, where successful charging cannot be achieved even at the first cycle with plain elemental S-based cathode material due to the severe PS shuttle phenomenon. These results suggest that inverse vulcanization copolymers are promising alternatives to elemental sulfur for enhancing the electrochemical performance of PEO-based all-solid-state Li-S cells.

Estimation of sensing characteristics for refractory nitrides based gain assisted core-shell plasmonic nanoparticles

NASA Astrophysics Data System (ADS)

Shishodia, Manmohan Singh; Pathania, Pankaj

2018-04-01

Refractory transition metal nitrides such as zirconium nitride (ZrN), hafnium nitride (HfN) and titanium nitride (TiN) have emerged as viable alternatives to coinage metals based plasmonic materials, e.g., gold (Au) and silver (Ag). The present work assesses the suitability of gain assisted ZrN-, HfN- and TiN-based conventional core-shell nanoparticles (CCSNPs) and multilayered core-shell nanoparticles (MCSNPs) for refractive index sensing. We report that the optical gain incorporation in the dielectric layer leads to multifold enhancement of the scattering efficiency (Qsca), substantial reduction of the spectral full width at half maximum, and a higher figure of merit (FOM). In comparison with CCSNPs, the MCSNP system exhibits superior sensing characteristics such as higher FOM, ˜ 45% reduction in the critical optical gain, response shift towards the biological window, and higher degree of tunability. Inherent biocompatibility, growth compatibility, chemical stability and flexible spectral tuning of refractory nitrides augmented by superior sensing properties in the present work may pave the way for refractory nitrides based low cost sensing.

Boron nitride nanotubes for spintronics.

PubMed

Dhungana, Kamal B; Pati, Ranjit

2014-09-22

With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

Boron Nitride Nanotubes for Spintronics

PubMed Central

Dhungana, Kamal B.; Pati, Ranjit

2014-01-01

With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics. PMID:25248070

Synthesis of Sr2Si5N8:Ce3+ phosphors for white LEDs via an efficient chemical deposition

PubMed Central

Yang, Che-Yuan; Som, Sudipta; Das, Subrata; Lu, Chung-Hsin

2017-01-01

Novel chemical vapor deposition (CVD) process was successfully developed for the growth of Sr2Si5N8:Ce3+ phosphors with elevated luminescent properties. Metallic strontium was used as a vapor source for producing Sr3N2 vapor to react with Si3N4 powder via a homogeneous gas-solid reaction. The phosphors prepared via the CVD process showed high crystallinity, homogeneous particle size ranging from 8 to 10 μm, and high luminescence properties. In contrast, the phosphors prepared via the conventional solid-state reaction process exhibited relative low crystallinity, non-uniform particle size in the range of 0.5–5 μm and relatively lower luminescent properties than the phosphors synthesized via the CVD process. Upon the blue light excitation, Sr2−xCexSi5N8 phosphors exhibited a broad yellow band. A red shift of the emission band from 535 to 556 nm was observed with the increment in the doping amount of Ce3+ ions from x = 0.02 to x = 0.10. The maximum emission was observed at x = 0.06, and the external and internal quantum efficiencies were calculated to be 51% and 71%, respectively. Furthermore, the CVD derived optimum Sr1.94Ce0.06Si5N8 phosphor exhibited sufficient thermal stability for blue-LEDs and the activation energy was calculated to be 0.33 eV. The results demonstrate a potential synthesis process for nitride phosphors suitable for light emitting diodes. PMID:28361999

Synthesis of Sr2Si5N8:Ce3+ phosphors for white LEDs via an efficient chemical deposition

NASA Astrophysics Data System (ADS)

Yang, Che-Yuan; Som, Sudipta; Das, Subrata; Lu, Chung-Hsin

2017-03-01

Novel chemical vapor deposition (CVD) process was successfully developed for the growth of Sr2Si5N8:Ce3+ phosphors with elevated luminescent properties. Metallic strontium was used as a vapor source for producing Sr3N2 vapor to react with Si3N4 powder via a homogeneous gas-solid reaction. The phosphors prepared via the CVD process showed high crystallinity, homogeneous particle size ranging from 8 to 10 μm, and high luminescence properties. In contrast, the phosphors prepared via the conventional solid-state reaction process exhibited relative low crystallinity, non-uniform particle size in the range of 0.5-5 μm and relatively lower luminescent properties than the phosphors synthesized via the CVD process. Upon the blue light excitation, Sr2-xCexSi5N8 phosphors exhibited a broad yellow band. A red shift of the emission band from 535 to 556 nm was observed with the increment in the doping amount of Ce3+ ions from x = 0.02 to x = 0.10. The maximum emission was observed at x = 0.06, and the external and internal quantum efficiencies were calculated to be 51% and 71%, respectively. Furthermore, the CVD derived optimum Sr1.94Ce0.06Si5N8 phosphor exhibited sufficient thermal stability for blue-LEDs and the activation energy was calculated to be 0.33 eV. The results demonstrate a potential synthesis process for nitride phosphors suitable for light emitting diodes.

Detector for imaging and dosimetry of laser-driven epithermal neutrons by alpha conversion

NASA Astrophysics Data System (ADS)

Mirfayzi, S. R.; Alejo, A.; Ahmed, H.; Wilson, L. A.; Ansell, S.; Armstrong, C.; Butler, N. M. H.; Clarke, R. J.; Higginson, A.; Notley, M.; Raspino, D.; Rusby, D. R.; Borghesi, M.; Rhodes, N. J.; McKenna, P.; Neely, D.; Brenner, C. M.; Kar, S.

2016-10-01

An epithermal neutron imager based on detecting alpha particles created via boron neutron capture mechanism is discussed. The diagnostic mainly consists of a mm thick Boron Nitride (BN) sheet (as an alpha converter) in contact with a non-borated cellulose nitride film (LR115 type-II) detector. While the BN absorbs the neutrons in the thermal and epithermal ranges, the fast neutrons register insignificantly on the detector due to their low neutron capture and recoil cross-sections. The use of solid-state nuclear track detectors (SSNTD), unlike image plates, micro-channel plates and scintillators, provide safeguard from the x-rays, gamma-rays and electrons. The diagnostic was tested on a proof-of-principle basis, in front of a laser driven source of moderated neutrons, which suggests the potential of using this diagnostic (BN+SSNTD) for dosimetry and imaging applications.

Microstructure and corrosion resistance of nitrogen-rich surface layers on AISI 304 stainless steel by rapid nitriding in a hollow cathode discharge

NASA Astrophysics Data System (ADS)

Li, Yang; He, Yongyong; Zhang, Shangzhou; Wang, Wei; Zhu, Yijie

2018-01-01

Nitriding treatments have been successfully applied to austenitic stainless steels to improve their hardness and tribological properties. However, at temperatures above 450 °C, conventional plasma nitriding processes decrease the corrosion resistance due to the formation of CrN phases within the modified layer. In this work, AISI 304 austenitic stainless steels were efficiently treated by rapid plasma nitriding at a high temperature of 530 °C in a hollow cathode discharge. The enhanced ionization obtained in the hollow cathode configuration provided a high current density and, consequently, a high temperature could be attained in a short time. The nitrided layers were characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. The results indicated that the dual-layer structure of the nitrided layer consists of a high-N face-centered cubic structure with a free CrN precipitate outer (top) layer and a nitrogen-expanded austenite S-phase bottom layer. The rapid nitriding-assisted hollow cathode discharge technique permits the use of high temperatures, as high as 530 °C, without promoting degradation in the corrosion resistance of stainless steel.

An all-solid-state perovskite-sensitized solar cell based on the dual function polyaniline as the sensitizer and p-type hole-transporting material

NASA Astrophysics Data System (ADS)

Xiao, Yaoming; Han, Gaoyi; Chang, Yunzhen; Zhou, Haihan; Li, Miaoyu; Li, Yanping

2014-12-01

High performance dual function of polyaniline (PANI) with brachyplast structure is synthesized by using a two-step cyclic voltammetry (CV) approach onto the fluorinated tin oxide (FTO) glass substrate, which acts as the sensitizer and p-type hole-transporting material (p-HTM) for the all-solid-state perovskite-sensitized solar cell (ass-PSSC) due to its π-π* transition and the localized polaron. The ass-PSSC based on the PANI delivers a photovoltaic conversion efficiency of 7.34%, and reduces from 7.34% to 6.71% after 1000 h, thereby 91.42% of the energy conversion efficiency is kept, indicating the device has a good long-term stability.

Structure and energetics of carbon, hexagonal boron nitride, and carbon/hexagonal boron nitride single-layer and bilayer nanoscrolls

NASA Astrophysics Data System (ADS)

Siahlo, Andrei I.; Poklonski, Nikolai A.; Lebedev, Alexander V.; Lebedeva, Irina V.; Popov, Andrey M.; Vyrko, Sergey A.; Knizhnik, Andrey A.; Lozovik, Yurii E.

2018-03-01

Single-layer and bilayer carbon and hexagonal boron nitride nanoscrolls as well as nanoscrolls made of bilayer graphene/hexagonal boron nitride heterostructure are considered. Structures of stable states of the corresponding nanoscrolls prepared by rolling single-layer and bilayer rectangular nanoribbons are obtained based on the analytical model and numerical calculations. The lengths of nanoribbons for which stable and energetically favorable nanoscrolls are possible are determined. Barriers to rolling of single-layer and bilayer nanoribbons into nanoscrolls and barriers to nanoscroll unrolling are calculated. Based on the calculated barriers nanoscroll lifetimes in the stable state are estimated. Elastic constants for bending of graphene and hexagonal boron nitride layers used in the model are found by density functional theory calculations.

Cycle analysis of planar SOFC power generation with serial connection of low and high temperature SOFCs

NASA Astrophysics Data System (ADS)

Araki, Takuto; Ohba, Takahiro; Takezawa, Shinya; Onda, Kazuo; Sakaki, Yoshinori

Solid oxide fuel cells (SOFCs) can be composed of solid components for stable operation, and high power generation efficiency is obtained by using high temperature exhaust heat for fuel reforming and bottoming power generation by a gas turbine. Recently, low-temperature SOFCs, which run in the temperature range of around 600 °C or above and give high power generation efficiency, have been developed. On the other hand, a power generation system with multi-staged fuel cells has been proposed by the United States DOE to obtain high efficiency. In our present study, a power generation system consisting of two-staged SOFCs with serial connection of low and high temperature SOFCs was investigated. Overpotential data for the low-temperature SOFC used in this study are based on recently published data, while data for high-temperature SOFC are based on our previous study. The numerical results show that the power generation efficiency of the two-staged SOFCs is 50.3% and the total efficiency of power generation with gas turbine is 56.1% under standard operating conditions. These efficiencies are a little higher than those by high-temperature SOFC only.

Deep Ultraviolet Light Emitters Based on (Al,Ga)N/GaN Semiconductor Heterostructures

NASA Astrophysics Data System (ADS)

Liang, Yu-Han

Deep ultraviolet (UV) light sources are useful in a number of applications that include sterilization, medical diagnostics, as well as chemical and biological identification. However, state-of-the-art deep UV light-emitting diodes and lasers made from semiconductors still suffer from low external quantum efficiency and low output powers. These limitations make them costly and ineffective in a wide range of applications. Deep UV sources such as lasers that currently exist are prohibitively bulky, complicated, and expensive. This is typically because they are constituted of an assemblage of two to three other lasers in tandem to facilitate sequential harmonic generation that ultimately results in the desired deep UV wavelength. For semiconductor-based deep UV sources, the most challenging difficulty has been finding ways to optimally dope the (Al,Ga)N/GaN heterostructures essential for UV-C light sources. It has proven to be very difficult to achieve high free carrier concentrations and low resistivities in high-aluminum-containing III-nitrides. As a result, p-type doped aluminum-free III-nitrides are employed as the p-type contact layers in UV light-emitting diode structures. However, because of impedance-mismatch issues, light extraction from the device and consequently the overall external quantum efficiency is drastically reduced. This problem is compounded with high losses and low gain when one tries to make UV nitride lasers. In this thesis, we provide a robust and reproducible approach to resolving most of these challenges. By using a liquid-metal-enabled growth mode in a plasma-assisted molecular beam epitaxy process, we show that highly-doped aluminum containing III-nitride films can be achieved. This growth mode is driven by kinetics. Using this approach, we have been able to achieve extremely high p-type and n-type doping in (Al,Ga)N films with high aluminum content. By incorporating a very high density of Mg atoms in (Al,Ga)N films, we have been able to show, by temperature-dependent photoluminescence, that the activation energy of the acceptors is substantially lower, thus allowing a higher hole concentration than usual to be available for conduction. It is believed that the lower activation energy is a result of an impurity band tail induced by the high Mg concentration. The successful p-type doping of high aluminum-content (Al,Ga)N has allowed us to demonstrate operation of deep ultraviolet LEDs emitting at 274 nm. This achievement paves the way for making lasers that emit in the UV-C region of the spectrum. In this thesis, we performed preliminary work on using our structures to make UV-C lasers based on photonic crystal nanocavity structures. The nanocavity laser structures show that the threshold optical pumping power necessary to reach lasing is much lower than in conventional edge-emitting lasers. Furthermore, the photonic crystal nanocavity structure has a small mode volume and does not need mirrors for optical feedback. These advantages significantly reduce material loss and eliminate mirror loss. This structure therefore potentially opens the door to achieving efficient and compact lasers in the UV-C region of the spectrum.

Rational design of metal nitride redox materials for solar-driven ammonia synthesis.

PubMed

Michalsky, Ronald; Pfromm, Peter H; Steinfeld, Aldo

2015-06-06

Fixed nitrogen is an essential chemical building block for plant and animal protein, which makes ammonia (NH3) a central component of synthetic fertilizer for the global production of food and biofuels. A global project on artificial photosynthesis may foster the development of production technologies for renewable NH3 fertilizer, hydrogen carrier and combustion fuel. This article presents an alternative path for the production of NH3 from nitrogen, water and solar energy. The process is based on a thermochemical redox cycle driven by concentrated solar process heat at 700-1200°C that yields NH3 via the oxidation of a metal nitride with water. The metal nitride is recycled via solar-driven reduction of the oxidized redox material with nitrogen at atmospheric pressure. We employ electronic structure theory for the rational high-throughput design of novel metal nitride redox materials and to show how transition-metal doping controls the formation and consumption of nitrogen vacancies in metal nitrides. We confirm experimentally that iron doping of manganese nitride increases the concentration of nitrogen vacancies compared with no doping. The experiments are rationalized through the average energy of the dopant d-states, a descriptor for the theory-based design of advanced metal nitride redox materials to produce sustainable solar thermochemical ammonia.

Rational design of metal nitride redox materials for solar-driven ammonia synthesis

PubMed Central

Michalsky, Ronald; Pfromm, Peter H.; Steinfeld, Aldo

2015-01-01

Fixed nitrogen is an essential chemical building block for plant and animal protein, which makes ammonia (NH3) a central component of synthetic fertilizer for the global production of food and biofuels. A global project on artificial photosynthesis may foster the development of production technologies for renewable NH3 fertilizer, hydrogen carrier and combustion fuel. This article presents an alternative path for the production of NH3 from nitrogen, water and solar energy. The process is based on a thermochemical redox cycle driven by concentrated solar process heat at 700–1200°C that yields NH3 via the oxidation of a metal nitride with water. The metal nitride is recycled via solar-driven reduction of the oxidized redox material with nitrogen at atmospheric pressure. We employ electronic structure theory for the rational high-throughput design of novel metal nitride redox materials and to show how transition-metal doping controls the formation and consumption of nitrogen vacancies in metal nitrides. We confirm experimentally that iron doping of manganese nitride increases the concentration of nitrogen vacancies compared with no doping. The experiments are rationalized through the average energy of the dopant d-states, a descriptor for the theory-based design of advanced metal nitride redox materials to produce sustainable solar thermochemical ammonia. PMID:26052421

Disorder from the Bulk Ionic Liquid in Electric Double Layer Transistors

DOE PAGES

Petach, Trevor A.; Reich, Konstantin V.; Zhang, Xiao; ...

2017-07-28

Ionic liquid gating has a number of advantages over solid-state gating, especially for flexible or transparent devices and for applications requiring high carrier densities. But, the large number of charged ions near the channel inevitably results in Coulomb scattering, which limits the carrier mobility in otherwise clean systems. We develop a model for this Coulomb scattering. We then validate our model experimentally using ionic liquid gating of graphene across varying thicknesses of hexagonal boron nitride, demonstrating that disorder in the bulk ionic liquid often dominates the scattering.

Broadband cross-polarization-based heteronuclear dipolar recoupling for structural and dynamic NMR studies of rigid and soft solids

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kharkov, B. B.; Chizhik, V. I.; Dvinskikh, S. V., E-mail: sergeid@kth.se

2016-01-21

Dipolar recoupling is an essential part of current solid-state NMR methodology for probing atomic-resolution structure and dynamics in solids and soft matter. Recently described magic-echo amplitude- and phase-modulated cross-polarization heteronuclear recoupling strategy aims at efficient and robust recoupling in the entire range of coupling constants both in rigid and highly dynamic molecules. In the present study, the properties of this recoupling technique are investigated by theoretical analysis, spin-dynamics simulation, and experimentally. The resonance conditions and the efficiency of suppressing the rf field errors are examined and compared to those for other recoupling sequences based on similar principles. The experimental datamore » obtained in a variety of rigid and soft solids illustrate the scope of the method and corroborate the results of analytical and numerical calculations. The technique benefits from the dipolar resolution over a wider range of coupling constants compared to that in other state-of-the-art methods and thus is advantageous in studies of complex solids with a broad range of dynamic processes and molecular mobility degrees.« less

White Light Emission from Cucurbituril-Based Host-Guest Interaction in the Solid State: New Function of the Macrocyclic Host.

PubMed

Xia, Yu; Chen, Shiyan; Ni, Xin-Long

2018-04-18

Energy transfer and interchange are central for fabricating white light-emitting organic materials. However, increasing the efficiency of light energy transfer remains a considerable challenge because of the occurrence of "cross talk". In this work, by exploiting the unique photophysical properties of cucurbituril-triggered host-guest interactions, the two complementary luminescent colors blue and yellow for white light emission were independently obtained from a single fluorophore dye rather than energy transfer. Further study suggested that the rigid cavity of cucurbiturils efficiently prevented the aggregation of the dye and improved its thermal stability in the solid state by providing a regular nanosized fence for each encapsulated dye molecule. As a result, a novel macrocycle-assisted supramolecular approach for obtaining solid, white light-emitting organic materials with low cost, high efficiency, and easy scale-up was successfully demonstrated.

Approach to Low-Cost High-Efficiency OLED Lighting. Building Technologies Solid State Lighting (SSL) Program Final Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pei, Qibing

2017-10-06

This project developed an integrated substrate which organic light emitting diode (OLED) panel developers could employ the integrated substrate to fabricate OLED devices with performance and projected cost meeting the MYPP targets of the Solid State Lighting Program of the Department of Energy. The project optimized the composition and processing conditions of the integrated substrate for OLED light extraction efficiency and overall performance. The process was further developed for scale up to a low-cost process and fabrication of prototype samples. The encapsulation of flexible OLEDs based on this integrated substrate was also investigated using commercial flexible barrier films.

Dissolution of bulk specimens of silicon nitride

NASA Technical Reports Server (NTRS)

Davis, W. F.; Merkle, E. J.

1981-01-01

An accurate chemical characterization of silicon nitride has become important in connection with current efforts to incorporate components of this material into advanced heat engines. However, there are problems concerning a chemical analysis of bulk silicon nitride. Current analytical methods require the pulverization of bulk specimens. A pulverization procedure making use of grinding media, on the other hand, will introduce contaminants. A description is given of a dissolution procedure which overcomes these difficulties. It has been found that up to at least 0.6 g solid pieces of various samples of hot pressed and reaction bonded silicon nitride can be decomposed in a mixture of 3 mL hydrofluoric acid and 1 mL nitric acid overnight at 150 C in a Parr bomb. High-purity silicon nitride is completely soluble in nitric acid after treatment in the bomb. Following decomposition, silicon and hydrofluoric acid are volatilized and insoluble fluorides are converted to a soluble form.

Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

NASA Technical Reports Server (NTRS)

Aslam, Shahid; Herrero, Federico A.; Sigwarth, John; Goldsman, Neil; Akturk, Akin

2010-01-01

The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

New polymeric precursors to SiNCB, BN, and La(3)Ni(2)B(2)N(3) materials

NASA Astrophysics Data System (ADS)

Wideman, Thomas W.

Boron-containing non-oxide ceramics demonstrate a number of important structural, electronic and physical properties. However, the lack of general synthetic routes to generate these materials with controlled composition, under moderate conditions, and in processed forms, has hampered both scientific studies and practical applications. The goal of the work described in this dissertation was to develop efficient new polymeric precursor routes to boron-containing materials including SiNCB ceramics composites, boron nitride fibers, and quaternary metal boro-nitride superconductors. Two types of polyborosilazane precursors to SiNCB ceramics were developed. Borazine-co-silazane copolymers were prepared through the thermal copolymerization of borazine with two silazanes, tris(trimethylsilylamino)silane, and 1,1,3,3,5,5 -hexamethylcyclotrisilazane. Polyborosilazanes with pendent boron-containing species were obtained by the modification of preformed hydridopolysilazane polymers with three monofunctional boranes: pinacolborane, 2,4-diethylborazine and 1,3-dimethyl-1,3-diaza-2-boracyclopentane. Pyrolyses of both types of polyborosilazanes produced SiNCB ceramics with controllable boron contents, enhanced thermal stabilities, and reduced crystallinity. Processible polymeric precursors to BN were also achieved by the chemical modification of polyborazylene, (Bsb3Nsb3Hsb{˜ 4}rbrack sb{x}, with diethylamine, dipentylamine, and hexamethyldisilazane. The modified polymers, unlike the parent polyborazylene, do not crosslink at low temperatures, and therefore proved to be ideal melt-spinnable precursors to BN ceramic fibers. A new polymeric precursor route to the recently discovered Lasb3Nisb2Bsb2Nsb3 superconductor (Tc = 12K) was developed by reacting lanthanum and nickel powders dispersed in the polyborazylene, to produce the intermetallic in excellent yields. The use of the polymer as a "reagent" provided a controllable, solid state source of nitrogen, and allows for the large scale syntheses of Lasb3Nisb2Bsb2Nsb3 and other quaternary metal boro-nitrides. Two new preparations of borazine, Bsb3Nsb3Hsb6, a key molecular unit in many of the polymers described above, have also been developed. Chemical investigations and practical applications of borazine-based preceramic polymers have been limited by the inefficient syntheses and high cost of borazine, which may now be prepared in 55-65% yields by the convenient, inexpensive the reaction of ammonium and borohydride salts, and the decomposition of ammonia borane, in high-boiling ether solutions.

Supramolecular intermediates in the synthesis of polymeric carbon nitride from melamine cyanurate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dante, Roberto C., E-mail: rcdante@yahoo.com; Sánchez-Arévalo, Francisco M.; Chamorro-Posada, Pedro

The adduct of melamine and cyanuric acid (MCA) was used in past research to produce polymeric carbon nitride and precursors. The reaction yield was considerably incremented by the addition of sulfuric acid. The polymeric carbon nitride formation occurs around 450 °C at temperatures above the sublimation of the adduct components, which occurs around 400 °C. In this report the effect of sulfuric acid on MCA was investigated. It was found that the MCA rosette supramolecular channel structures behave as a solid solvent able to host small molecules, such as sulfuric acid, inside these channels and interact with them. Therefore, themore » sulfuric acid effect was found to be close to that of a solute that causes a temperature increment of the “solvent sublimation” enough to allowing the formation of polymeric carbon nitride to occur. Sulfate ions are presumably hosted in the rosette channels of MCA as shown by simulations. - Graphical abstract: The blend of melamine cyanurate and sulfuric acid behaves like a solution so that melamine cyanurate decomposition is shifted to temperatures high enough to react and form polymeric carbon nitride. - Highlights: • The adduct of melamine and cyanuric acid behaves as a solid solvent. • The blend of sulfuric acid and melamine cyanurate behaves like a solution. • Melamine cyanurate decomposition is shifted to higher temperatures by sulfuric acid. • The formation of polymeric carbon nitride occurs for these higher temperatures.« less

A high performance flexible all solid state supercapacitor based on the MnO2 sphere coated macro/mesoporous Ni/C electrode and ionic conducting electrolyte

NASA Astrophysics Data System (ADS)

Zhi, Jian; Reiser, Oliver; Wang, Youfu; Hu, Aiguo

2016-06-01

A high contact resistance between the active materials and the current collector, a low ionic conductivity of the gel electrolyte, and an impenetrable electrode structure are the three major barriers which greatly limit the capacitance of MnO2 in solid state supercapacitors. As a potential solution to these problems, in this work we report a novel electrode for solid state supercapacitors, based on a ternary system composed of hierarchical MnO2 spheres as the active material, macroporous Ni foam as gel penetrable skeletons and an ordered mesoporous carbon (OMC) membrane as the charge-transport accelerating layer. By employing butyl-3-methylimidazolium chloride (BMIMCl) modified gels as the ionic conducting electrolyte, the utilization efficiency of MnO2 on the specific capacitance was enhanced up to 88% of the theoretical value, delivering a volumetric capacitance of 81 F cm-3, which is the highest value among MnO2 based solid state supercapacitors. Moreover, such a flexible device exhibits exceptional volumetric energy and power density (6.6 Wh L-1 and 549 W L-1, based on the whole device volume) combined with a small capacity loss of 8.5% after 6000 cycles under twisting. These encouraging findings unambiguously overcome the energy bottleneck of MnO2 in solid state supercapacitors, and open up a new application of macro/mesoporous materials in flexible devices.A high contact resistance between the active materials and the current collector, a low ionic conductivity of the gel electrolyte, and an impenetrable electrode structure are the three major barriers which greatly limit the capacitance of MnO2 in solid state supercapacitors. As a potential solution to these problems, in this work we report a novel electrode for solid state supercapacitors, based on a ternary system composed of hierarchical MnO2 spheres as the active material, macroporous Ni foam as gel penetrable skeletons and an ordered mesoporous carbon (OMC) membrane as the charge-transport accelerating layer. By employing butyl-3-methylimidazolium chloride (BMIMCl) modified gels as the ionic conducting electrolyte, the utilization efficiency of MnO2 on the specific capacitance was enhanced up to 88% of the theoretical value, delivering a volumetric capacitance of 81 F cm-3, which is the highest value among MnO2 based solid state supercapacitors. Moreover, such a flexible device exhibits exceptional volumetric energy and power density (6.6 Wh L-1 and 549 W L-1, based on the whole device volume) combined with a small capacity loss of 8.5% after 6000 cycles under twisting. These encouraging findings unambiguously overcome the energy bottleneck of MnO2 in solid state supercapacitors, and open up a new application of macro/mesoporous materials in flexible devices. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr02215d

Towards flexible solid-state supercapacitors for smart and wearable electronics.

PubMed

Dubal, Deepak P; Chodankar, Nilesh R; Kim, Do-Heyoung; Gomez-Romero, Pedro

2018-03-21

Flexible solid-state supercapacitors (FSSCs) are frontrunners in energy storage device technology and have attracted extensive attention owing to recent significant breakthroughs in modern wearable electronics. In this study, we review the state-of-the-art advancements in FSSCs to provide new insights on mechanisms, emerging electrode materials, flexible gel electrolytes and novel cell designs. The review begins with a brief introduction on the fundamental understanding of charge storage mechanisms based on the structural properties of electrode materials. The next sections briefly summarise the latest progress in flexible electrodes (i.e., freestanding and substrate-supported, including textile, paper, metal foil/wire and polymer-based substrates) and flexible gel electrolytes (i.e., aqueous, organic, ionic liquids and redox-active gels). Subsequently, a comprehensive summary of FSSC cell designs introduces some emerging electrode materials, including MXenes, metal nitrides, metal-organic frameworks (MOFs), polyoxometalates (POMs) and black phosphorus. Some potential practical applications, such as the development of piezoelectric, photo-, shape-memory, self-healing, electrochromic and integrated sensor-supercapacitors are also discussed. The final section highlights current challenges and future perspectives on research in this thriving field.

Promises and challenges in solid-state lighting

NASA Astrophysics Data System (ADS)

Schubert, Fred

2010-03-01

Lighting technologies based on semiconductor light-emitting diodes (LEDs) offer unprecedented promises that include three major benefits: (i) Gigantic energy savings enabled by efficient conversion of electrical energy to optical energy; (ii) Substantial positive contributions to sustainability through reduced emissions of global-warming gases, acid-rain gases, and toxic substances such as mercury; and (iii) The creation of new paradigms in lighting driven by the unique controllability of solid-state lighting sources. Due to the powerful nature of these benefits, the transition from conventional lighting sources to solid-state lighting is virtually assured. This presentation will illustrate the new world of lighting and illustrate the pervasive changes to be expected in lighting, displays, communications, and biotechnology. The presentation will also address the formidable challenges that must be addressed to continue the further advancement of solid-state lighting technology. These challenges offer opportunities for research and innovation. Specific challenges include light management, carrier transport, and optical design. We will present some innovative approaches in order to solve known technical challenges faced by solid-state lighting. These approaches include the demonstration and use of new optical thin-film materials with a continuously tunable refractive index. These approaches also include the use of polarization-matched structures that reduce the polarization fields in GaInN LEDs and the hotly debated efficiency droop, that is, the decreasing LED efficiency at high currents.

High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

NASA Astrophysics Data System (ADS)

Torgovkin, A.; Chaudhuri, S.; Ruhtinas, A.; Lahtinen, M.; Sajavaara, T.; Maasilta, I. J.

2018-05-01

Superconducting titanium nitride (TiN) thin films were deposited on magnesium oxide, sapphire and silicon nitride substrates at 700 °C, using a pulsed laser deposition (PLD) technique, where infrared (1064 nm) pulses from a solid-state laser were used for the ablation from a titanium target in a nitrogen atmosphere. Structural studies performed with x-ray diffraction showed the best epitaxial crystallinity for films deposited on MgO. In the best films, superconducting transition temperatures, T C, as high as 4.8 K were observed, higher than in most previous superconducting TiN thin films deposited with reactive sputtering. A room temperature resistivity down to ∼17 μΩ cm and residual resistivity ratio up to 3 were observed in the best films, approaching reported single crystal film values, demonstrating that PLD is a good alternative to reactive sputtering for superconducting TiN film deposition. For less than ideal samples, the suppression of the film properties were correlated mostly with the unintended incorporation of oxygen (5–10 at%) in the film, and for high oxygen content films, vacuum annealing was also shown to increase the T C. On the other hand, superconducting properties were surprisingly insensitive to the nitrogen content, with high quality films achieved even in the highly nitrogen rich, Ti:N = 40/60 limit. Measures to limit oxygen exposure during deposition must be taken to guarantee the best superconducting film properties, a fact that needs to be taken into account with other deposition methods, as well.

Aggregation-induced emission in lamellar solids of colloidal perovskite quantum wells

PubMed Central

Jagielski, Jakub; Kumar, Sudhir; Wang, Mingchao; Scullion, Declan; Lawrence, Robert; Li, Yen-Ting; Yakunin, Sergii; Tian, Tian; Kovalenko, Maksym V.; Chiu, Yu-Cheng; Santos, Elton J. G.; Lin, Shangchao; Shih, Chih-Jen

2017-01-01

The outstanding excitonic properties, including photoluminescence quantum yield (ηPL), of individual, quantum-confined semiconductor nanoparticles are often significantly quenched upon aggregation, representing the main obstacle toward scalable photonic devices. We report aggregation-induced emission phenomena in lamellar solids containing layer-controlled colloidal quantum wells (QWs) of hybrid organic-inorganic lead bromide perovskites, resulting in anomalously high solid-state ηPL of up to 94%. Upon forming the QW solids, we observe an inverse correlation between exciton lifetime and ηPL, distinct from that in typical quantum dot solid systems. Our multiscale theoretical analysis reveals that, in a lamellar solid, the collective motion of the surface organic cations is more restricted to orient along the [100] direction, thereby inducing a more direct bandgap that facilitates radiative recombination. Using the QW solids, we demonstrate ultrapure green emission by completely downconverting a blue gallium nitride light-emitting diode at room temperature, with a luminous efficacy higher than 90 lumen W−1 at 5000 cd m−2, which has never been reached in any nanomaterial assemblies by far. PMID:29282451

New multifunctional tungsten nitride with energetic N6 and extreme hardness predicted from first principles

NASA Astrophysics Data System (ADS)

Li, Qian; Sha, Lei; Zhu, Chunye; Yao, Yansun

2017-05-01

We report a new member to the family of tungsten nitrides, WN6, predicted from the structure search. Ground-state convex hull calculation reveals that crystalline WN6 is thermodynamically stable at pressures above 16 GPa, but remains dynamically stable at ambient conditions. The predicted high-pressure WN6 structure contains chaired \\text{cyclo-N}6{6-} rings isoelectronic to cyclo-hexasulfur (S6), which is unprecedented in nitrogen. In the \\text{cyclo-N}6{6-} unit all nitrogen atoms are singly bonded and therefore contain a high energy density. By means of efficiently packing the covalent-bonded species, WN6 is estimated to have extremely high Vickers hardness greater than 40 GPa at ambient conditions, placing it as one of the hardest materials. The present results reveal that WN6 may be used as a superhard material but simultaneously maintaining other desirable properties, which represents an interesting example of multifunctional materials.

A series of inorganic solid nitrogen sources for the synthesis of metal nitride clusterfullerenes: the dependence of production yield on the oxidation state of nitrogen and counter ion.

PubMed

Liu, Fupin; Guan, Jian; Wei, Tao; Wang, Song; Jiao, Mingzhi; Yang, Shangfeng

2013-04-01

A series of nitrogen-containing inorganic solid compounds with variable oxidation states of nitrogen and counter ions have been successfully applied as new inorganic solid nitrogen sources toward the synthesis of Sc-based metal nitride clusterfullerenes (Sc-NCFs), including ammonium salts [(NH4)xH(3-x)PO4 (x = 0-2), (NH4)2SO4, (NH4)2CO3, NH4X (X = F, Cl), NH4SCN], thiocyanate (KSCN), nitrates (Cu(NO3)2, NaNO3), and nitrite (NaNO2). Among them, ammonium phosphates ((NH4)xH(3-x)PO4, x = 1-3) and ammonium thiocyanate (NH4SCN) are revealed to behave as better nitrogen sources than others, and the highest yield of Sc-NCFs is achieved when NH4SCN was used as a nitrogen source. The optimum molar ratio of Sc2O3:(NH4)3PO4·3H2O:C and Sc2O3:NH4SCN:C has been determined to be 1:2:15 and 1:3:15, respectively. The thermal decomposition products of these 12 inorganic compounds have been discussed in order to understand their different performances toward the synthesis of Sc-NCFs, and accordingly the dependence of the production yield of Sc-NCFs on the oxidation state of nitrogen and counter ion is interpreted. The yield of Sc3N@C80 (I(h) + D(5h)) per gram Sc2O3 by using the N2-based group of nitrogen sources (thiocyanate, nitrates, and nitrite) is overall much lower than those by using gaseous N2 and NH4SCN, indicating the strong dependence of the yield of Sc-NCFs on the oxidation state of nitrogen, which is attributed to the "in-situ" redox reaction taking place for the N2-based group of nitrogen sources during discharging. For NH3-based group of nitrogen sources (ammonium salts) which exhibits a (-3) oxidation states of nitrogen, their performance as nitrogen sources is found to be sensitively dependent on the anion, and this is understood by considering their difference on the thermal stability and/or decomposition rate. Contrarily, for the N2-based group of nitrogen sources, the formation of Sc-NCFs is independent to both the oxidation state of nitrogen (+3 or +5) and the cation.

Investigation of the stability of Co-doped apatite ionic conductors in NH 3

NASA Astrophysics Data System (ADS)

Headspith, D. A.; Orera, A.; Slater, P. R.; Young, N. A.; Francesconi, M. G.

2010-12-01

Hydrogen powered solid oxide fuel cells (SOFCs) are of enormous interest as devices for the efficient and clean production of electrical energy. However, a number of problems linked to hydrogen production, storage and transportation are slowing down the larger scale use of SOFCs. Identifying alternative fuel sources to act as intermediate during the transition to the full use of hydrogen is, therefore, of importance. One excellent alternative is ammonia, which is produced on a large scale, is relatively cheap and has the infrastructure for storage and transportation already in place. However, considering that SOFCs operate at temperatures higher than 500 °C, a potential problem is the interaction of gaseous ammonia with the materials in the cathode, anode and solid electrolyte. In this paper, we extend earlier work on high temperature reactions of apatite electrolytes with NH 3 to the transition metal (Co) doped systems, La 9.67Si 5CoO 26 and La 10(Si/Ge) 5CoO 26.5. A combination of PXRD, TGA and XAFS spectroscopy data showed a better structural stability for the silicate systems. Apatite silicates and germanates not containing transition metals tend to substitute nitride anions for their interstitial oxide anions, when reacted with NH 3 at high temperature and, consequentially, lower the interstitial oxide content. In La 9.67Si 5CoO 26 and La 10(Si/Ge) 5CoO 26.5 reduction of Co occurs as a competing process, favouring lower levels of nitride-oxide substitution.

Metasurfaces based on Gallium Nitride High Contrast Gratings at Visible Range

NASA Astrophysics Data System (ADS)

Wang, Zhenhai; He, Shumin; Liu, Qifa; Wang, Wei; Wang, Yongjin; Zhu, Hongbo; Grünberg Research Centre Team

2015-03-01

Metasurfaces are currently attracting global attention due to their ability to achieve full control of light propagation. However, these metasurfaces have thus far been constructed mostly from metallic materials, which greatly limit the diffraction efficiencies because of the ohmic losses. Semiconducting metasurfaces offer one potential solution to the issue of losses. Besides, the use of semiconducting materials can broaden the applicability of metasurfaces, as they enable facile integration with electronics and mechanical systems and can benefit from mature semiconductor fabrication technologies. We have proposed visible-light metasurfaces (VLMs) capable of serving as lenses and beam deflecting elements based on gallium nitride (GaN) high contrast gratings (HCGs). By precisely manipulating the wave-fronts of the transmitted light, we theoretically demonstrate an HCG focusing lens with transmissivity of 83.0% and numerical aperture of 0.77, and a VLM with beam deflection angle of 6.03° and transmissivity as high as 93.3%. The proposed metasurfaces are promising for GaN-based visible light-emitting diodes (LEDs), which would be robust and versatile for controlling the output light propagation and polarization, as well as enhancing the extraction efficiency of the LEDs.

New materials from high-pressure experiments.

PubMed

McMillan, Paul F

2002-09-01

High-pressure synthesis on an industrial scale is applied to obtain synthetic diamonds and cubic boron nitride (c-BN), which are the superhard abrasives of choice for cutting and shaping hard metals and ceramics. Recently, high-pressure science has undergone a renaissance, with novel techniques and instrumentation permitting entirely new classes of high-pressure experiments. For example, superconducting behaviour was previously known for only a few elements and compounds. Under high-pressure conditions, the 'superconducting periodic table' now extends to all classes of the elements, including condensed rare gases, and ionic compounds such as CsI. Another surprising result is the newly discovered solid-state chemistry of light-element 'gas' molecules such as CO2, N2 and N2O. These react to give polymerized covalently bonded or ionic mineral structures under conditions of high pressure and temperature: the new solids are potentially recoverable to ambient conditions. Here we examine innovations in high-pressure research that might be harnessed to develop new materials for technological applications.

Facile solid-state synthesis of highly dispersed Cu nanospheres anchored on coal-based activated carbons as an efficient heterogeneous catalyst for the reduction of 4-nitrophenol

NASA Astrophysics Data System (ADS)

Wang, Shan; Gao, Shasha; Tang, Yakun; Wang, Lei; Jia, Dianzeng; Liu, Lang

2018-04-01

Coal-based activated carbons (AC) were acted as the support, Cu/AC catalysts were synthesized by a facile solid-state reaction combined with subsequent heat treatment. In Cu/AC composites, highly dispersed Cu nanospheres were anchored on AC. The catalytic activity for 4-nitrophenol (4-NP) was investigated, the effects of activation temperature and copper loading on the catalytic performance were studied. The catalysts exhibited very high catalytic activity and moderate chemical stability due to the unique characteristics of the particle-assembled nanostructures, the high surface area and the porous structure of coal-based AC and the good dispersion of metal particles. Design and preparation of non-noble metal composite catalysts provide a new direction for improving the added value of coal.

Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

NASA Astrophysics Data System (ADS)

Wang, T.

2016-09-01

The most successful example of large lattice-mismatched epitaxial growth of semiconductors is the growth of III-nitrides on sapphire, leading to the award of the Nobel Prize in 2014 and great success in developing InGaN-based blue emitters. However, the majority of achievements in the field of III-nitride optoelectronics are mainly limited to polar GaN grown on c-plane (0001) sapphire. This polar orientation poses a number of fundamental issues, such as reduced quantum efficiency, efficiency droop, green and yellow gap in wavelength coverage, etc. To date, it is still a great challenge to develop longer wavelength devices such as green and yellow emitters. One clear way forward would be to grow III-nitride device structures along a semi-/non-polar direction, in particular, a semi-polar orientation, which potentially leads to both enhanced indium incorporation into GaN and reduced quantum confined Stark effects. This review presents recent progress on developing semi-polar GaN overgrowth technologies on sapphire or Si substrates, the two kinds of major substrates which are cost-effective and thus industry-compatible, and also demonstrates the latest achievements on electrically injected InGaN emitters with long emission wavelengths up to and including amber on overgrown semi-polar GaN. Finally, this review presents a summary and outlook on further developments for semi-polar GaN based optoelectronics.

Scattering-layer-induced energy storage function in polymer-based quasi-solid-state dye-sensitized solar cells.

PubMed

Zhang, Xi; Jiang, Hongrui

2015-03-09

Photo-self-charging cells (PSCs) are compact devices with dual functions of photoelectric conversion and energy storage. By introducing a scattering layer in polymer-based quasi-solid-state dye-sensitized solar cells, two-electrode PSCs with highly compact structure were obtained. The charge storage function stems from the formed ion channel network in the scattering layer/polymer electrolyte system. Both the photoelectric conversion and the energy storage functions are integrated in only the photoelectrode of such PSCs. This design of PSC could continuously output power as a solar cell with considerable efficiency after being photo-charged. Such PSCs could be applied in highly-compact mini power devices.

Higher Efficiency for Quasi-Solid State Dye Sensitized Solar Cells Under Low Light Irradiance

NASA Astrophysics Data System (ADS)

Desilva, Ajith; Bandara, T. M. W. J.; Fernado, H. D. N. S.; Fernando, P. S. L.; Dissanayake, M. A. K. L.; Jayasundara, W. J. M. J. S. R.; Furlani, M.; Mellander, B.-E.

2014-03-01

Dye-sensitized solar cells (DSSCs), lower cost solar energy conversion devices are alternative green energy source. The liquid based electrolyte DSSCs have higher efficiencies with many practical issues while the quasi-solid-state DSSCs resolve the key problems but efficiencies are relatively low. Polyacrylonitrile (PAN) based gel polymer electrolytes were fabricated as DSSCs by incorporating ethylene carbonate and propylene carbonate plasticizers and tetrapropylammonium iodide salt. A thin layer of electrolyte was sandwiched between the TiO2 anode (sensitized with N719 dye) and the Pt counter electrode. The electrolyte had an ionic conductivity of 2.6 mS/cm at 25 degrees of Celsius. DSSCs incorporating this gel electrolyte revealed Vsc circuit, Jsc, fill factor (FF) and efficiency values of 0.71 V, 11.8 mA, 51 percent and 4.2 percent respectively under 1 sun irradiation. The efficiency of the cell increased with decreasing solar irradiance achieving up to 10 percent efficiency and 80 percent FF at low irradiance values. This work uncovers that quasi-solid state DSSCs can reach efficiencies close to that of liquid electrolytes based cells.

Optical absorption and oxygen passivation of surface states in III-nitride photonic devices

NASA Astrophysics Data System (ADS)

Rousseau, Ian; Callsen, Gordon; Jacopin, Gwénolé; Carlin, Jean-François; Butté, Raphaël; Grandjean, Nicolas

2018-03-01

III-nitride surface states are expected to impact high surface-to-volume ratio devices, such as nano- and micro-wire light-emitting diodes, transistors, and photonic integrated circuits. In this work, reversible photoinduced oxygen desorption from III-nitride microdisk resonator surfaces is shown to increase optical attenuation of whispering gallery modes by 100 cm-1 at λ = 450 nm. Comparison of photoinduced oxygen desorption in unintentionally and n+-doped microdisks suggests that the spectral changes originate from the unpinning of the surface Fermi level, likely taking place at etched nonpolar III-nitride sidewalls. An oxygen-rich surface prepared by thermal annealing results in a broadband Q improvement to state-of-the-art values exceeding 1 × 104 at 2.6 eV. Such findings emphasize the importance of optically active surface states and their passivation for future nanoscale III-nitride optoelectronic and photonic devices.

Efficient Storing Energy Harvested by Triboelectric Nanogenerators Using a Safe and Durable All-Solid-State Sodium-Ion Battery.

PubMed

Hou, Huidan; Xu, Qingkai; Pang, Yaokun; Li, Lei; Wang, Jiulin; Zhang, Chi; Sun, Chunwen

2017-08-01

Storing energy harvested by triboelectric nanogenerators (TENGs) from ambient mechanical motion is still a great challenge for achieving low-cost and environmental benign power sources. Here, an all-solid-state Na-ion battery with safe and durable performance used for efficient storing pulsed energy harvested by the TENG is demonstrated. The solid-state sodium-ion batteries are charged by galvanostatic mode and pulse mode with the TENG, respectively. The all-solid-state sodium-ion battery displays excellent cyclic performance up to 1000 cycles with a capacity retention of about 85% even at a high charge and discharge current density of 48 mA g -1 . When charged by the TENG, an energy conversion efficiency of 62.3% is demonstrated. The integration of TENGs with the safe and durable all-solid-state sodium-ion batteries is potential for providing more stable power output for self-powered systems.

Homogeneous and heterogeneous micro-structuring of austenitic stainless steels by the low temperature plasma nitriding

NASA Astrophysics Data System (ADS)

Aizawa, T.; Yoshihara, S.-I.

2018-06-01

The austenitic stainless steels have been widely utilized as a structural component and member as well as a die and mold substrate for stamping. AISI316 dies and molds require for the surface treatment to accommodate the sufficient hardness and wear resistance to them. In addition, the candidate treatment methods must be free from toxicity, energy consumption and inefficiency. The low temperature plasma nitriding process has become one of the most promising methods to make solid-solution hardening by the nitrogen super-saturation. In the present paper, the high density RF/DC plasma nitriding process was applied to form the uniform nitrided layer in the AISI316 matrix and to describe the essential mechanism of inner nitriding in this low temperature nitriding process. In case of the nitrided AISI316 at 673 K for 14.4ks, the nitrided layer thickness became 60 μm with the surface hardness of 1700 HV and the surface nitrogen content of 7 mass %. This inner nitriding process is governed by the synergetic interrelation among the nitrogen super-saturation, the lattice expansion, the phase transformation, the plastic straining, the microstructure refinement and the acceleration of nitrogen diffusion. As far as this interrelation is sustained during the nitriding process, the original austenitic microstructure is homogeneously nitrided to have fine grains with the average size of 0.1 μm and the high crystallographic misorientation angles and to have two phase (γ + α’) structures with the plateau of nitrogen content by 5 mass%. Once this interrelation does not work anymore, the homogeneous microstructure changed itself to the heterogeneous one. The plastic straining took place in the selected coarse grains; they were partially refined into subgrains. This plastic localization accompanied the localized phase transformation.

Facile Synthesis of Defect-Rich and S/N Co-Doped Graphene-Like Carbon Nanosheets as an Efficient Electrocatalyst for Primary and All-Solid-State Zn-Air Batteries.

PubMed

Zhang, Jian; Zhou, Huang; Zhu, Jiawei; Hu, Pei; Hang, Chao; Yang, Jinlong; Peng, Tao; Mu, Shichun; Huang, Yunhui

2017-07-26

Developing facile and low-cost porous graphene-based catalysts for highly efficient oxygen reduction reaction (ORR) remains an important matter for fuel cells. Here, a defect-enriched and dual heteroatom (S and N) doped hierarchically porous graphene-like carbon nanomaterial (D-S/N-GLC) was prepared by a simple and scalable strategy, and exhibits an outperformed ORR activity and stability as compared to commercial Pt/C catalyst in an alkaline condition (its half-wave potential is nearly 24 mV more positive than Pt/C). The excellent ORR performance of the catalyst can be attributed to the synergistic effect, which integrates the novel graphene-like architectures, 3D hierarchically porous structure, superhigh surface area, high content of active dopants, and abundant defective sites in D-S/N-GLC. As a result, the developed catalysts are used as the air electrode for primary and all-solid-state Zn-air batteries. The primary batteries demonstrate a higher peak power density of 252 mW cm -2 and high voltage of 1.32 and 1.24 V at discharge current densities of 5 and 20 mA cm -2 , respectively. Remarkably, the all-solid-state battery also exhibits a high peak power density of 81 mW cm -2 with good discharge performance. Moreover, such catalyst possesses a comparable ORR activity and higher stability than Pt/C in acidic condition. The present work not only provides a facile but cost-efficient strategy toward preparation of graphene-based materials, but also inspires an idea for promoting the electrocatalytic activity of carbon-based materials.

Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling

DOE Office of Scientific and Technical Information (OSTI.GOV)

David, Aurelien, E-mail: adavid@soraa.com; Hurni, Christophe A.; Young, Nathan G.

The current-voltage characteristic and ideality factor of III-Nitride quantum well light-emitting diodes (LEDs) grown on bulk GaN substrates are investigated. At operating temperature, these electrical properties exhibit a simple behavior. A model in which only active-region recombinations have a contribution to the LED current is found to account for experimental results. The limit of LED electrical efficiency is discussed based on the model and on thermodynamic arguments, and implications for electroluminescent cooling are examined.

Solid composite electrolytes for lithium batteries

DOEpatents

Kumar, Binod; Scanlon, Jr., Lawrence G.

2000-01-01

Solid composite electrolytes are provided for use in lithium batteries which exhibit moderate to high ionic conductivity at ambient temperatures and low activation energies. In one embodiment, a ceramic-ceramic composite electrolyte is provided containing lithium nitride and lithium phosphate. The ceramic-ceramic composite is also preferably annealed and exhibits an activation energy of about 0.1 eV.

Plasmonic Photovoltaic Cells with Dual-Functional Gold, Silver, and Copper Half-Shell Arrays.

PubMed

Wu, Ling; Kim, Gyu Min; Nishi, Hiroyasu; Tatsuma, Tetsu

2017-09-12

Solid-state photovoltaic cells based on plasmon-induced charge separation (PICS) have attracted growing attention during the past decade. However, the power conversion efficiency (PCE) of the previously reported devices, which are generally loaded with dispersed metal nanoparticles as light absorbers, has not been sufficiently high. Here we report simpler plasmonic photovoltaic cells with interconnected Au, Ag, and Cu half-shell arrays deposited on SiO 2 @TiO 2 colloidal crystals, which serve both as a plasmonic light absorber and as a current collector. The well-controlled and easily prepared plasmonic structure allows precise comparison of the PICS efficiency between different plasmonic metal species. The cell with the Ag half-shell array has higher photovoltaic performance than the cells with Au and Cu half-shell arrays because of the high population of photogenerated energetic electrons, which gives a high electron injection efficiency and suppressed charge recombination probability, achieving the highest PCE among the solid-state PICS devices even without a hole transport layer.

John Simon | NREL

Science.gov Websites

novel crystalline substrates for growth of III-V Nitride semiconductors for solid-state lighting applications. Since then he has been involved in various projects involving the growth of III-V semiconductor .; Romero, M.; and Lee, M.J. "Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells

Novel Solid-State Solar Cell Based on Hole-Conducting MOF-Sensitizer Demonstrating Power Conversion Efficiency of 2.1.

PubMed

Ahn, Do Young; Lee, Deok Yeon; Shin, Chan Yong; Bui, Hoa Thi; Shrestha, Nabeen K; Giebeler, Lars; Noh, Yong-Young; Han, Sung-Hwan

2017-04-19

This work reports on designing of first successful MOF-sensitizer based solid-state photovoltaic device, perticularly with a meaningful output power conversion efficiency. In this study, an intrinsically conductive cobalt-based MOFs (Co-DAPV) formed by the coordination between Co (II) ions and a redox active di(3-diaminopropyl)-viologen (i.e., DAPV) ligand is investigated as sensitizer. Hall-effect measurement shows p-type conductivity of the Co-DAPV film with hole mobility of 0.017 cm 2 V -1 s -1 , suggesting its potential application as hole transporting sensitizer. Further, the energy levels of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of Co-DAPV are well-matched to be suitably employed for sensitizing TiO 2 . Thus, by layer-by-layer deposition of hole conducting MOF-sensitizer onto mesoporous TiO 2 film, a power conversion efficiency of as high as 2.1% is achieved, which exceeds the highest efficiency values of MOF-sensitized liquid-junction solar cells reported so far.

A high performance flexible all solid state supercapacitor based on the MnO2 sphere coated macro/mesoporous Ni/C electrode and ionic conducting electrolyte.

PubMed

Zhi, Jian; Reiser, Oliver; Wang, Youfu; Hu, Aiguo

2016-06-09

A high contact resistance between the active materials and the current collector, a low ionic conductivity of the gel electrolyte, and an impenetrable electrode structure are the three major barriers which greatly limit the capacitance of MnO2 in solid state supercapacitors. As a potential solution to these problems, in this work we report a novel electrode for solid state supercapacitors, based on a ternary system composed of hierarchical MnO2 spheres as the active material, macroporous Ni foam as gel penetrable skeletons and an ordered mesoporous carbon (OMC) membrane as the charge-transport accelerating layer. By employing butyl-3-methylimidazolium chloride (BMIMCl) modified gels as the ionic conducting electrolyte, the utilization efficiency of MnO2 on the specific capacitance was enhanced up to 88% of the theoretical value, delivering a volumetric capacitance of 81 F cm(-3), which is the highest value among MnO2 based solid state supercapacitors. Moreover, such a flexible device exhibits exceptional volumetric energy and power density (6.6 Wh L(-1) and 549 W L(-1), based on the whole device volume) combined with a small capacity loss of 8.5% after 6000 cycles under twisting. These encouraging findings unambiguously overcome the energy bottleneck of MnO2 in solid state supercapacitors, and open up a new application of macro/mesoporous materials in flexible devices.

Formation of Different Si3N4 Nanostructures by Salt-Assisted Nitridation.

PubMed

Liu, Xiongzhang; Guo, Ran; Zhang, Sengjing; Li, Qingda; Saito, Genki; Yi, Xuemei; Nomura, Takahiro

2018-04-11

Silicon nitride (Si 3 N 4 ) products with different nanostructure morphologies and different phases for Si 3 N 4 ceramic with high thermal conductivity were synthesized by a direct nitriding method. NaCl and NH 4 Cl were added to raw Si powders, and the reaction was carried out under a nitrogen gas flow of 100 mL/min. The phase composition and morphologies of the products were systemically characterized by X-ray diffraction, field emission scanning electron microscopy, and high-resolution transmission electron microscopy. At 1450 °C, the NaCl content was 30 wt %, the NH 4 Cl content was 3 wt %, and the maximum α-Si 3 N 4 content was 96 wt %. The process of Si nitridation can be divided into three stages by analyzing the reaction schemes: in the first stage (25-900 °C), NH 4 Cl decomposition and the generation of stacked amorphous Si 3 N 4 occurs; in the second stage (900-1450 °C), NaCl melts and Si 3 N 4 generates; and in the third stage (>1450 °C), α-Si 3 N 4 → β-Si 3 N 4 phase change and the evaporation of NaCl occurs. The products are made of two layers: a thin upper layer of nanowires containing different nanostructures and a lower layer mainly comprising fluffy, blocky, and short needlelike products. The introduction of NaCl and NH 4 Cl facilitated the evaporation of Si powders and the decomposition of Al 2 O 3 from porcelain boat and furnace tube, which resulted in the mixing of N 2 , O 2 , Al 2 O, and Si vapors and generated Al x Si y O z nanowires with rough surfaces and lead to thin Si 3 N 4 nanowires, nanobranches by the vapor-solid (VS), vapor-liquid-solid (VLS), and the double-stage VLS base and VS tip growth mechanisms.

Feasibility of Actively Cooled Silicon Nitride Airfoil for Turbine Applications Demonstrated

NASA Technical Reports Server (NTRS)

Bhatt, Ramakrishna T.

2001-01-01

Nickel-base superalloys currently limit gas turbine engine performance. Active cooling has extended the temperature range of service of nickel-base superalloys in current gas turbine engines, but the margin for further improvement appears modest. Therefore, significant advancements in materials technology are needed to raise turbine inlet temperatures above 2400 F to increase engine specific thrust and operating efficiency. Because of their low density and high-temperature strength and thermal conductivity, in situ toughened silicon nitride ceramics have received a great deal of attention for cooled structures. However, the high processing costs and low impact resistance of silicon nitride ceramics have proven to be major obstacles for widespread applications. Advanced rapid prototyping technology in combination with conventional gel casting and sintering can reduce high processing costs and may offer an affordable manufacturing approach. Researchers at the NASA Glenn Research Center, in cooperation with a local university and an aerospace company, are developing actively cooled and functionally graded ceramic structures. The objective of this program is to develop cost-effective manufacturing technology and experimental and analytical capabilities for environmentally stable, aerodynamically efficient, foreign-object-damage-resistant, in situ toughened silicon nitride turbine nozzle vanes, and to test these vanes under simulated engine conditions. Starting with computer aided design (CAD) files of an airfoil and a flat plate with internal cooling passages, the permanent and removable mold components for gel casting ceramic slips were made by stereolithography and Sanders machines, respectively. The gel-cast part was dried and sintered to final shape. Several in situ toughened silicon nitride generic airfoils with internal cooling passages have been fabricated. The uncoated and thermal barrier coated airfoils and flat plates were burner rig tested for 30 min without and with air cooling. Without cooling, the surface temperature of the flat plate reached approximately 2350 F. Starting with computer aided design (CAD) files of an airfoil and a flat plate with internal cooling passages, the permanent and removable mold components for gel casting ceramic slips were made by stereolithography and Sanders machines, respectively. The gel-cast part was dried and sintered to final shape. Several in situ toughened silicon nitride generic airfoils with internal cooling passages have been fabricated. The uncoated and thermal barrier coated airfoils and flat plates were burner rig tested for 30 min without and with air cooling. Without cooling, the surface temperature of the flat plate reached approximately 2350 F. With cooling, the surface temperature decreased to approximately 1910 F--a drop of approximately 440 F. This preliminary study demonstrates that a near-net-shape silicon nitride airfoil can be fabricated and that silicon nitride can sustain severe thermal shock and the thermal gradients induced by cooling and, thus, is a viable candidate for cooled components.

Boron nitride as desalting material in combination with phosphopeptide enrichment in shotgun proteomics.

PubMed

Furuhashi, Takeshi; Nukarinen, Ella; Ota, Shigenori; Weckwerth, Wolfram

2014-05-01

Hydrophilic peptides in shotgun proteomics have been shown to be problematic in conventional chromatography. Typically, C18 solid phase extraction or peptide traps are used for desalting the sample prior to mass spectrometry analysis, but the capacity to retain hydrophilic peptides is not very high, causing a bias toward more hydrophobic peptides. This is particularly problematic in phosphoproteomic studies. We tested the compatibility of commercially available boron nitride as a novel material for peptide desalting. Boron nitride can be used to recover a wide range of peptides with different physicochemical properties comparable to combined C18 and graphite carbon material. Copyright © 2014. Published by Elsevier Inc.

Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Zhaoying; Zheng, Xiantong; Li, Zhilong

2016-08-08

We report a 23.4% improvement of conversion efficiency in solar cells based on InGaN/GaN multiple quantum wells by using a patterned sapphire substrate in the fabrication process. The efficiency enhancement is due to the improvement of the crystalline quality, as proven by the reduction of the threading dislocation density. More importantly, the better crystalline quality leads to a positive photovoltaic efficiency temperature coefficient up to 423 K, which shows the property and advantage of wide gap semiconductors like InGaN, signifying the potential of III-nitride based solar cells for high temperature and concentrating solar power applications.

Internal structure of multiphase zinc-blende wurtzite gallium nitride nanowires.

PubMed

Jacobs, B W; Ayres, V M; Crimp, M A; McElroy, K

2008-10-08

In this paper, the internal structure of novel multiphase gallium nitride nanowires in which multiple zinc-blende and wurtzite crystalline domains grow simultaneously along the entire length of the nanowire is investigated. Orientation relationships within the multiphase nanowires are identified using high-resolution transmission electron microscopy of nanowire cross-sections fabricated with a focused ion beam system. A coherent interface between the zinc-blende and wurtzite phases is identified. A mechanism for catalyst-free vapor-solid multiphase nanowire nucleation and growth is proposed.

Nanopipes in gallium nitride nanowires and rods.

PubMed

Jacobs, Benjamin W; Crimp, Martin A; McElroy, Kaylee; Ayres, Virginia M

2008-12-01

Gallium nitride nanowires and rods synthesized by a catalyst-free vapor-solid growth method were analyzed with cross section high-resolution transmission electron microscopy. The cross section studies revealed hollow core screw dislocations, or nanopipes, in the nanowires and rods. The hollow cores were located at or near the center of the nanowires and rods, along the axis of a screw dislocation. The formation of the hollow cores is consistent with effect of screw dislocations with giant Burgers vector predicted by Frank.

The improvement of GaN-based LED grown on concave nano-pattern sapphire substrate with SiO2 blocking layer

NASA Astrophysics Data System (ADS)

Lin, Jyun-Hao; Huang, Shyh-Jer; Su, Yan-Kuin; Huang, Kai-Wen

2015-11-01

In contrast to convex nano-pattern sapphire substrates (NPSS), which are frequently used to fabricate high-quality nitride-based light-emitting diodes (LEDs), concave NPSS have been paid relatively less attention. In this study, a concave NPSS was fabricated, and its nitride epitaxial growth process was evaluated in a step by step manner. A SiO2 layer was used to avoid nucleation over the sidewall and bottom of the nano-patterns to reduce dislocation reformation. Traditional LED structures were grown on the NPSS layer to determine its influence on device performance. X-ray diffraction, etched pit density, inverse leakage current, and internal quantum efficiency (IQE) results showed that dislocations and non-radiative recombination centers are reduced by the NPSS constructed with a SiO2 blocking layer. An IQE twice that on a planar substrate was also achieved; such a high IQE significantly enhanced the external quantum efficiency of the resultant device. Taken together, the results demonstrate that the SiO2 blocking layer proposed in this work can enhance the performance of LEDs.

Inter-layer potential for hexagonal boron nitride

NASA Astrophysics Data System (ADS)

Leven, Itai; Azuri, Ido; Kronik, Leeor; Hod, Oded

2014-03-01

A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture well the binding and lateral sliding energies of planar h-BN based dimer systems as well as the interlayer telescoping and rotation of double walled boron-nitride nanotubes of different crystallographic orientations. The new potential thus allows for the accurate and efficient modeling and simulation of large-scale h-BN based layered structures.

Oligothiophene-based colorimetric and ratiometric fluorescence dual-channel cyanide chemosensor: Sensing ability, TD-DFT calculations and its application as an efficient solid state sensor

NASA Astrophysics Data System (ADS)

Lan, Linxin; Li, Tianduo; Wei, Tao; Pang, He; Sun, Tao; Wang, Enhua; Liu, Haixia; Niu, Qingfen

2018-03-01

An oligothiophene-based colorimetric and ratiometric fluorescence dual-channel cyanide chemosensor 3 T-2CN was reported. Sensor 3 T-2CN showed both naked-eye recognition and ratiometric fluorescence response for CN- with an excellent selectivity and high sensitivity. The sensing mechanism based on the nucleophilic attack of CN- on the vinyl Cdbnd C bond has been successfully confirmed by the optical measurements, 1H NMR titration, FT-IR spectra as well as the DFT/TD-DFT calculations. Moreover, the detection limit was calculated to be 0.19 μM, which is much lower than the maximum permission concentration in drinking water (1.9 μM). Importantly, test strips (filter paper and TLC plates) containing 3 T-2CN were fabricated, which could act as a practical and efficient solid state optical sensor for CN- in field measurements.

A novel solid state fermentation coupled with gas stripping enhancing the sweet sorghum stalk conversion performance for bioethanol

PubMed Central

2014-01-01

Background Bioethanol production from biomass is becoming a hot topic internationally. Traditional static solid state fermentation (TS-SSF) for bioethanol production is similar to the traditional method of intermittent operation. The main problems of its large-scale intensive production are the low efficiency of mass and heat transfer and the high ethanol inhibition effect. In order to achieve continuous production and high conversion efficiency, gas stripping solid state fermentation (GS-SSF) for bioethanol production from sweet sorghum stalk (SSS) was systematically investigated in the present study. Results TS-SSF and GS-SSF were conducted and evaluated based on different SSS particle thicknesses under identical conditions. The ethanol yield reached 22.7 g/100 g dry SSS during GS-SSF, which was obviously higher than that during TS-SSF. The optimal initial gas stripping time, gas stripping temperature, fermentation time, and particle thickness of GS-SSF were 10 h, 35°C, 28 h, and 0.15 cm, respectively, and the corresponding ethanol stripping efficiency was 77.5%. The ethanol yield apparently increased by 30% with the particle thickness decreasing from 0.4 cm to 0.05 cm during GS-SSF. Meanwhile, the ethanol yield increased by 6% to 10% during GS-SSF compared with that during TS-SSF under the same particle thickness. The results revealed that gas stripping removed the ethanol inhibition effect and improved the mass and heat transfer efficiency, and hence strongly enhanced the solid state fermentation (SSF) performance of SSS. GS-SSF also eliminated the need for separate reactors and further simplified the bioethanol production process from SSS. As a result, a continuous conversion process of SSS and online separation of bioethanol were achieved by GS-SSF. Conclusions SSF coupled with gas stripping meet the requirements of high yield and efficient industrial bioethanol production. It should be a novel bioconversion process for bioethanol production from SSS biomass. PMID:24713041

High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer

NASA Astrophysics Data System (ADS)

Lim, Jae-Gab; Yang, Seung-Dong; Yun, Ho-Jin; Jung, Jun-Kyo; Park, Jung-Hyun; Lim, Chan; Cho, Gyu-seok; Park, Seong-gye; Huh, Chul; Lee, Hi-Deok; Lee, Ga-Won

2018-02-01

In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ∼8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1-2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.

Ultraviolet-Diode Pump Solid State Laser Removal of Titanium Aluminium Nitride Coating from Tungsten Carbide Substrate

NASA Astrophysics Data System (ADS)

See, Tian Long; Chantzis, Dimitrios; Royer, Raphael; Metsios, Ioannis; Antar, Mohammad; Marimuthu, Sundar

2017-09-01

This paper presents an investigation on the titanium aluminium nitride (TiAlN) coating removal from tungsten carbide (WC-Co) substrate using a diode pump solid state (DPSS) ultraviolet (UV) laser with maximum average power of 90 W, wavelength of 355 nm and pulse width of 50 ns. The TiAlN coating of 1.5 μm thickness is removed from the WC-Co substrate with laser fluence of 2.71 J/cm2 at 285.6 number of pulses (NOP) and with NOP of 117.6 at 3.38 J/cm2 fluence. Titanium oxide formation was observed on the ablated surface due to the re-deposition of ablated titanium residue and also attributed to the high temperature observed during the laser ablation process. Crack width of around 0.2 μm was observed over both TiAlN coating and WC-Co substrate. The crack depth ranging from 1 to 10 μm was observed and is related to the thickness of the melted carbide. The crack formation is a result of the thermal induced stresses caused by the laser beam interaction with the material as well as the higher thermal conductivity of cobalt compared to WC. Two cleaning regions are observed and is a consequence of the Gaussian distribution of the laser beam energy. The surface roughness of the ablated WC-Co increased with increasing laser fluence and NOP.

Boson Sampling with Single-Photon Fock States from a Bright Solid-State Source.

PubMed

Loredo, J C; Broome, M A; Hilaire, P; Gazzano, O; Sagnes, I; Lemaitre, A; Almeida, M P; Senellart, P; White, A G

2017-03-31

A boson-sampling device is a quantum machine expected to perform tasks intractable for a classical computer, yet requiring minimal nonclassical resources as compared to full-scale quantum computers. Photonic implementations to date employed sources based on inefficient processes that only simulate heralded single-photon statistics when strongly reducing emission probabilities. Boson sampling with only single-photon input has thus never been realized. Here, we report on a boson-sampling device operated with a bright solid-state source of single-photon Fock states with high photon-number purity: the emission from an efficient and deterministic quantum dot-micropillar system is demultiplexed into three partially indistinguishable single photons, with a single-photon purity 1-g^{(2)}(0) of 0.990±0.001, interfering in a linear optics network. Our demultiplexed source is between 1 and 2 orders of magnitude more efficient than current heralded multiphoton sources based on spontaneous parametric down-conversion, allowing us to complete the boson-sampling experiment faster than previous equivalent implementations.

CEEM Final Technical Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bowers, John

The mission of the Center for Energy Efficient Materials (CEEM) was to serve the Department of Energy and the nation as a center of excellence dedicated to advancing basic research in nano-structured materials and devices for applications to solar electricity, thermoelectric conversion of waste heat to electricity, and solidstate lighting. The foundation of CEEM was based on the unique capabilities of UCSB and its partner institutions to control, synthesize, characterize, model, and apply materials at the nanoscale for more efficient sustainable energy resources. This unique expertise was a key source of the synergy that unified the research of the Center.more » Although the Center’s focus was basic research, It’s longer-term objective has been to transfer new materials and devices into the commercial sector where they will have a substantial impact on the nation’s need for efficient sustainable energy resources. As one measure of the impact of the Center, two start-up companies were formed based on its research. In addition, Center participants published a total of 210 archival journal articles, of which 51 were exclusively sponsored by the DOE grant. The work of the Center was structured around four specific tasks: Organic Solar Cells, Solid-State Lighting, Thermoelectrics, and High Efficiency Multi-junction Photovoltaic devices. A brief summary of each follows – detailed descriptions are in Sections 4 & 5 of this report. Research supported through CEEM led to an important shift with respect to the choice of materials used for the fabrication of solution deposited organic solar cells. Solution deposition opens the opportunity to manufacture solar cells via economically-viable high throughput tools, such as roll to roll printing. Prior to CEEM, most organic semiconductors utilized for this purpose involved polymeric materials, which, although they can form thin films reliably, suffer from batch to batch variations due to the statistical nature of the chemical reactions that produce them. In response, the CEEM team developed well-defined molecular semiconductors that produce active layers with very high power conversion efficiencies, in other words they can convert a very high fraction of sunlight into useful electrical power. The fact that the semiconductor is formed from molecular species provides the basis for circumventing the unreliability of polymer counterparts and, as an additional bonus, allows one to attain much grater insight into the structure of the active layer. The latter is particularly important because efficient conversion is the result of a complex arrangement of two semiconductors that need to phase separate in a way akin to oil and water, but with domains that are described by nanoscale dimensions. CEEM was therefore able to provide deep insight into the influence of nanostructure, through the application of structural characterization tools and theoretical methods that describe how electrical charges migrate through the organic layer. Our research in light emitting diode (LED)-based solid state lighting (SSL) was directed at improving efficiency and reducing costs to enable the widespread deployment of economically-viable replacements for inefficient incandescent, halogen, and fluorescent-based lighting. Our specific focus was to advance the fundamental science and technology of light emitting diodes to both understand factors that limit efficiencies and to provide innovative and viable solutions to the current impediments. One of the main challenges we faced is the decrease in efficiency when LEDs are driven harder to increase light output---the so called “droop” effect. It requires large emitting surfaces to reach a desired optical output, and necessitates the use of costly heat sinks, both of which increase the cost. We successfully reduced droop by growing LED crystals having non-conventional orientations. As recognized by the award of the 2014 Nobel prize to the inventors of the nitride LEDs (one of whom was a member of CEEM), LEDs already have a large societal impact in both developed (leading to large energy savings) and developing countries (bringing light where there is no electrical grid). The improvements in efficiency sought after in the CEEM project are key to a further impact of solid state lighting by LEDs with a projected doubling in efficiency by year 2020. Direct generation of electricity from heat has enormous promise for beneficial use of waste heat. But practical power generation directly from heat requires understanding and development of new and improved materials that will be more efficient and rugged than today’s thermoelectric materials. To accomplish this goal CEEM has synthesized five distinct and promising new classes of thermoelectric materials: (a) nanoparticle arrays that are effective in maximizing electric power generation and reducing detrimental loss of heat; (b) nitride and (c) oxide thermal electric materials that are effective at high temperatures where much beneficial heat is available; (d) arrays of silicon nano-wires that integrate thermal electricity generation into silicon-based electronics and materials; and (e) chemically synthesized nanostructured compounds that are cost effective, earth abundant, and environmentally friendly. The further development of these thermoelectric sources of electricity could have revolutionary impact for society in the recovery of waste heat from sources such as power plants and automobile exhaust, where there could be significant associated energy saving. It could even, in the future, provide disruptive alternatives and replacements for today’s internal combustion engines and could enable improved all-electric propulsion by the heat from shipboard nuclear reactors. The High Efficiency Multi-junction Photovoltaics task was a UCSB/NREL collaboration which bonded sub-cells from two different compound semiconductors material systems to make high efficiency multijunction solar cells for concentrating photovoltaic applications thathave substantially higher efficiency than single substrate cells made of elemental semiconductors such as silicon. This task required the development of new cell bonding methods with excellent coupling of both photons and electrons between the sub-cells. To accomplish this, we developed (1) GaInN solar cells with enhanced performance by using quantum-well absorbers and front-surface optical texturing, (2) a hybrid "pillar-array" bond which uses an array of metal pillars for electrical coupling, and (3) a "hybrid moth-eye" optical coating which combines the benefits of nano-imprinted moth-eye coatings and traditional multilayer coatings. The technical effectiveness was assessed by measurement of the photovoltaic efficiency of solar cells made using these techniques; the ultrahigh efficiencies targeted by this work are of compelling economic value for concentrating photovoltaics.« less

A simple method for the enrichment of bisphenols using boron nitride.

PubMed

Fischnaller, Martin; Bakry, Rania; Bonn, Günther K

2016-03-01

A simple solid-phase extraction method for the enrichment of 5 bisphenol derivatives using hexagonal boron nitride (BN) was developed. BN was applied to concentrate bisphenol derivatives in spiked water samples and the compounds were analyzed using HPLC coupled to fluorescence detection. The effect of pH and organic solvents on the extraction efficiency was investigated. An enrichment factor up to 100 was achieved without evaporation and reconstitution. The developed method was applied for the determination of bisphenol A migrated from some polycarbonate plastic products. Furthermore, bisphenol derivatives were analyzed in spiked and non-spiked canned food and beverages. None of the analyzed samples exceeded the migration limit set by the European Union of 0.6mg/kg food. The method showed good recovery rates ranging from 80% to 110%. Validation of the method was performed in terms of accuracy and precision. The applied method is robust, fast, efficient and easily adaptable to different analytical problems. Copyright © 2015 Elsevier Ltd. All rights reserved.

GaN Nanowire Devices: Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Scott, Reum

The development of microelectronics in the last 25 years has been characterized by an exponential increase of the bit density in integrated circuits (ICs) with time. Scaling solid-state devices improves cost, performance, and power; as such, it is of particular interest for companies, who gain a market advantage with the latest technology. As a result, the microelectronics industry has driven transistor feature size scaling from 10 μm to ~30 nm during the past 40 years. This trend has persisted for 40 years due to optimization, new processing techniques, device structures, and materials. But when noting processor speeds from the 1970's to 2009 and then again in 2010, the implication would be that the trend has ceased. To address the challenge of shrinking the integrated circuit (IC), current research is centered on identifying new materials and devices that can supplement and/or potentially supplant it. Bottom-up methods tailor nanoscale building blocks---atoms, molecules, quantum dots, and nanowires (NWs)---to be used to overcome these limitations. The Group IIIA nitrides (InN, AlN, and GaN) possess appealing properties such as a direct band gap spanning the whole solar spectrum, high saturation velocity, and high breakdown electric field. As a result nanostructures and nanodevices made from GaN and related nitrides are suitable candidates for efficient nanoscale UV/ visible light emitters, detectors, and gas sensors. To produce devices with such small structures new fabrication methods must be implemented. Devices composed of GaN nanowires were fabricated using photolithography and electron beam lithography. The IV characteristics of these devices were noted under different illuminations and the current tripled from 4.8*10-7 A to 1.59*10 -6 A under UV light which persisted for at least 5hrs.

Realizing topological edge states in a silicon nitride microring-based photonic integrated circuit.

PubMed

Yin, Chenxuan; Chen, Yujie; Jiang, Xiaohui; Zhang, Yanfeng; Shao, Zengkai; Xu, Pengfei; Yu, Siyuan

2016-10-15

Topological edge states in a photonic integrated circuit based on the platform of silicon nitride are demonstrated with a two-dimensional coupled resonator optical waveguide array involving the synthetic magnetic field for photons at near-infrared wavelengths. Measurements indicate that the topological edge states can be observed at certain wavelengths, with light travelling around the boundary of the array. Combined with the induced disorders in fabrication near the edge, the system shows the defect immunity under the topological protection of edge states.

High-Performance Solid-State Thermionic Energy Conversion Based on 2D van der Waals Heterostructures: A First-Principles Study.

PubMed

Wang, Xiaoming; Zebarjadi, Mona; Esfarjani, Keivan

2018-06-18

Two-dimensional (2D) van der Waals heterostructures (vdWHs) have shown multiple functionalities with great potential in electronics and photovoltaics. Here, we show their potential for solid-state thermionic energy conversion and demonstrate a designing strategy towards high-performance devices. We propose two promising thermionic devices, namely, the p-type Pt-G-WSe 2 -G-Pt and n-type Sc-WSe 2 -MoSe 2 -WSe 2 -Sc. We characterize the thermionic energy conversion performance of the latter using first-principles GW calculations combined with real space Green's function (GF) formalism. The optimal barrier height and high thermal resistance lead to an excellent performance. The proposed device is found to have a room temperature equivalent figure of merit of 1.2 which increases to 3 above 600 K. A high performance with cooling efficiency over 30% of the Carnot efficiency above 450 K is achieved. Our designing and characterization method can be used to pursue other potential thermionic devices based on vdWHs.

Solid electrolyte: The key for high-voltage lithium batteries

DOE PAGES

Li, Juchuan; Ma, Cheng; Chi, Miaofang; ...

2014-10-14

A solid-state high-voltage (5 V) lithium battery is demonstrated to deliver a cycle life of 10 000 with 90% capacity retention. Furthermore, the solid electrolyte enables the use of high-voltage cathodes and Li anodes with minimum side reactions, leading to a high Coulombic efficiency of 99.98+%.

Development of technique for air coating and nickel and copper metalization of solar cells

NASA Technical Reports Server (NTRS)

1982-01-01

Solar cells were made with a variety of base metal screen printing inks applied over silicon nitride AR coating and copper electroplated. Fritted and fritless nickel and fritless tin base printing inks were evaluated. Conversion efficiencies as high as 9% were observed with fritted nickel ink contacts, however, curve shapes were generally poor, reflecting high series resistance. Problems encountered in addition to high series reistance included loss of adhesion of the nickel contacts during plating and poor adhesion, oxidation and inferior curve shapes with the tin base contacts.

Combined crystal chemistry and DFT studies of ThNCl and Th2N2X (X: chalcogen) behaving as pseudo-binaries

NASA Astrophysics Data System (ADS)

Matar, Samir F.; Kfoury, Charbel N.

2018-02-01

Common features and peculiar differentiations characterize binary and ternary thorium nitride Th3N4, thorium nitride chloride ThNCl and the family of thorium nitride chalcogenides Th2N2X (X = O, S, Se, Te) investigated in the framework of the quantum density functional theory DFT. Particularly the dominant effect of the Th-N covalent bond stronger than ionic Th-Cl/Th-X ones as identified from analyses of bonding from overlap integral, electron localization function mapping, electronic density of states and charge transfer, is found at the origin of the layered-like structural arrangements in Th-N monolayers within ThNCl (Cl / [ThN]/ Cl) and Th-N double layers in Th2N2X (X / [Th2N2] / X) with the result of pseudo binary compounds: [ThN]+Cl- and [Th2N2] 2+X2-. All compounds are found semi-conducting with ∼2 eV band gap. It is claimed that such insights into Solid State Chemistry can help rationalizing complex compounds more comprehensively (two examples given).

Single-mode, All-Solid-State Nd:YAG Laser Pumped UV Converter

NASA Technical Reports Server (NTRS)

Prasad, Narasimha S.; Armstrong, Darrell, J.; Edwards, William C.; Singh, Upendra N.

2008-01-01

In this paper, the status of a high-energy, all solid-state Nd:YAG laser pumped nonlinear optics based UV converter development is discussed. The high-energy UV transmitter technology is being developed for ozone sensing applications from space based platforms using differential lidar technique. The goal is to generate greater than 200 mJ/pulse with 10-50 Hz PRF at wavelengths of 308 nm and 320 nm. A diode-pumped, all-solid-state and single longitudinal mode Nd:YAG laser designed to provide conductively cooled operation at 1064 nm has been built and tested. Currently, this pump laser provides an output pulse energy of >1 J/pulse at 50 Hz PRF and a pulsewidth of 22 ns with an electrical-to-optical system efficiency of greater than 7% and a M(sup 2) value of <2. The single frequency UV converter arrangement basically consists of an IR Optical Parametric Oscillator (OPO) and a Sum Frequency Generator (SFG) setups that are pumped by 532 nm wavelength obtained via Second Harmonic Generation (SHG). In this paper, the operation of an inter cavity SFG with CW laser seeding scheme generating 320 nm wavelength is presented. Efforts are underway to improve conversion efficiency of this mJ class UV converter by modifying the spatial beam profile of the pump laser.

Ultra High p-doping Material Research for GaN Based Light Emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vladimir Dmitriev

2007-06-30

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading inmore » light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.« less

Cobalt selenide hollow nanorods array with exceptionally high electrocatalytic activity for high-efficiency quasi-solid-state dye-sensitized solar cells

NASA Astrophysics Data System (ADS)

Jin, Zhitong; Zhang, Meirong; Wang, Min; Feng, Chuanqi; Wang, Zhong-Sheng

2018-02-01

In quasi-solid-state dye-sensitized solar cells (QSDSSCs), electron transport through a random network of catalyst in the counter electrode (CE) and electrolyte diffusion therein are limited by the grain boundaries of catalyst particles, thus diminishing the electrocatalytic performance of CE and the corresponding photovoltaic performance of QSDSSCs. We demonstrate herein an ordered Co0.85Se hollow nanorods array film as the Pt-free CE of QSDSSCs. The Co0.85Se hollow nanorods array displays excellent electrocatalytic activity for the reduction of I3- in the quasi-solid-state electrolyte with extremely low charge transfer resistance at the CE/electrolyte interface, and the diffusion of redox species within the Co0.85Se hollow nanorods array CE is pretty fast. The QSDSSC device with the Co0.85Se hollow nanorods array CE produces much higher photovoltaic conversion efficiency (8.35%) than that (4.94%) with the Co0.85Se randomly packed nanorods CE, against the control device with the Pt CE (7.75%). Moreover, the QSDSSC device based on the Co0.85Se hollow nanorods array CE presents good long-term stability with only 4% drop of power conversion efficiency after 1086 h one-sun soaking.

Continuous Heterogeneous Photocatalysis in Serial Micro-Batch Reactors.

PubMed

Pieber, Bartholomäus; Shalom, Menny; Antonietti, Markus; Seeberger, Peter H; Gilmore, Kerry

2018-01-29

Solid reagents, leaching catalysts, and heterogeneous photocatalysts are commonly employed in batch processes but are ill-suited for continuous-flow chemistry. Heterogeneous catalysts for thermal reactions are typically used in packed-bed reactors, which cannot be penetrated by light and thus are not suitable for photocatalytic reactions involving solids. We demonstrate that serial micro-batch reactors (SMBRs) allow for the continuous utilization of solid materials together with liquids and gases in flow. This technology was utilized to develop selective and efficient fluorination reactions using a modified graphitic carbon nitride heterogeneous catalyst instead of costly homogeneous metal polypyridyl complexes. The merger of this inexpensive, recyclable catalyst and the SMBR approach enables sustainable and scalable photocatalysis. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks

NASA Astrophysics Data System (ADS)

Kim, Kyoung H.; Gordon, Roy G.; Ritenour, Andrew; Antoniadis, Dimitri A.

2007-05-01

Atomic layer deposition (ALD) was used to deposit passivating interfacial nitride layers between Ge and high-κ oxides. High-κ oxides on Ge surfaces passivated by ultrathin (1-2nm) ALD Hf3N4 or AlN layers exhibited well-behaved C-V characteristics with an equivalent oxide thickness as low as 0.8nm, no significant flatband voltage shifts, and midgap density of interface states values of 2×1012cm-1eV-1. Functional n-channel and p-channel Ge field effect transistors with nitride interlayer/high-κ oxide/metal gate stacks are demonstrated.

Bulk Crystal Growth, and High-Resolution X-ray Diffraction Results of LiZnAs Semiconductor Material

NASA Astrophysics Data System (ADS)

Montag, Benjamin W.; Reichenberger, Michael A.; Sunder, Madhana; Ugorowski, Philip B.; Nelson, Kyle A.; Henson, Luke C.; McGregor, Douglas S.

2017-08-01

LiZnAs is being explored as a candidate for solid-state neutron detectors. The compact form, solid-state device would have greater efficiency than present day gas-filled 3He and 10BF3 detectors. Devices fabricated from LiZnAs having either natural Li (nominally 7.5% 6Li) or enriched 6Li (usually 95% 6Li) as constituent atoms may provide a material for compact high efficiency neutron detectors. The 6Li( n, t)4He reaction yields a total Q-value of 4.78 MeV, an energy larger than that of the 10B reaction, which can easily be identified above background radiations. LiZnAs material was synthesized by preparing equimolar portions of Li, Zn, and As sealed under vacuum (10-6 Torr) in quartz ampoules lined with boron nitride and subsequently reacted in a compounding furnace (Montag et al. in J Cryst Growth 412:103, 2015). The raw synthesized LiZnAs was purified by a static vacuum sublimation in quartz (Montag et al. in J Cryst Growth 438:99, 2016). Bulk crystalline LiZnAs ingots were grown from the purified material with a high-temperature Bridgman-style growth process described here. One of the largest LiZnAs ingots harvested was 9.6 mm in diameter and 4.2 mm in length. Samples were harvested from the ingot and were characterized for crystallinity using a Bruker AXS Inc. D8 AXS Inc. D2 CRYSO, energy dispersive x-ray diffractometer, and a Bruker AXS Inc. D8 DISCOVER, high-resolution x-ray diffractometer equipped with molybdenum radiation, Gobel mirror, four bounce germanium monochromator and a scintillation detector. The primary beam divergence was determined to be 0.004°, using a single crystal Si standard. The x-ray based characterization revealed that the samples nucleated in the (110) direction and a high-resolution open detector rocking curve recorded on the (220) LiZnAs yielded a full width at half maximum (FWHM) of 0.235°. Sectional pole figures using off-axis reflections of the (211) LiZnAs confirmed in-plane ordering, and also indicated the presence of multiple domains. The LiZnAs bulk crystals exhibited a Primitive Cubic Bravais lattice instead of the commonly reported Face-centered Cubic Bravais lattice. The lattice constant was determined to be 5.5146 ± 0.0003 Å.

Nitride based quantum well light-emitting devices having improved current injection efficiency

DOEpatents

Tansu, Nelson; Zhao, Hongping; Liu, Guangyu; Arif, Ronald

2014-12-09

A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 .ANG. and 24 .ANG. thick, respectively.

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

PubMed Central

Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

2016-01-01

Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials.

PubMed

Nikzad, Shouleh; Hoenk, Michael; Jewell, April D; Hennessy, John J; Carver, Alexander G; Jones, Todd J; Goodsall, Timothy M; Hamden, Erika T; Suvarna, Puneet; Bulmer, J; Shahedipour-Sandvik, F; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L Douglas

2016-06-21

Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100-300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness.

Development of an 83.2 MHz, 3.2 kW solid-state RF amplifier using Wilkinson power divider and combiner for a 10 MeV cyclotron

NASA Astrophysics Data System (ADS)

Song, Ho Seung; Ghergherehchi, Mitra; Oh, Seyoung; Chai, Jong Seo

2017-03-01

We design a stripline-type Wilkinson power divider and combiner for a 3.2 kW solid-state radio frequency (RF) amplifier module and optimize this setup. A Teflon-based printed circuit board is used in the power combiner to transmit high RF power efficiently in the limited space. The reflection coefficient (S11) and insertion loss (S21) related to impedance matching are characterized to determine the optimization process. The resulting two-way divider reflection coefficient and insertion loss were -48.00 dB and -3.22 dB, respectively. The two-way power combiner reflection coefficient and insertion loss were -20 dB and -3.3 dB, respectively. Moreover, the 3.2 kW solid-state RF power test results demonstrate that the proposed power divider and combiner exhibit a maximum efficiency value of 71.3% (combiner loss 5%) at 48 V supply voltage.

Single Protein Structural Analysis with a Solid-state Nanopore Sensor

NASA Astrophysics Data System (ADS)

Li, Jiali; Golovchenko, Jene; McNabb, David

2005-03-01

We report on the use of solid-state nanopore sensors to detect single polypeptides. These solid-state nanopores are fabricated in thin membranes of silicon nitride by ion beam sculpting...[1]. When an electrically biased nanopore is exposed to denatured proteins in ionic solution, discrete transient electronic signals: current blockages are observed. We demonstrate examples of such transient electronic signals for Bovine Serum Albumin (BSA) and human placental laminin M proteins in Guanidine hydrochloride solution, which suggest that these polypeptides are individually translocating through the nanopore during the detecting process. The amplitude of the current blockages is proportional to the bias voltage. No transient current blockages are observed when proteins are not present in the solution. To probe protein-folding state, pH and temperature dependence experiments are performed. The results demonstrate a solid-state nanopore sensor can be used to detect and analyze single polypeptide chains. Similarities and differences with signals obtained from double stranded DNA in a solid-state nanopore and single stranded DNA in a biological nanopore are discussed. [.1] Li, J., D. Stein, C. McMullan, D. Branton, M.J. Aziz, and J.A. Golovchenko, Ion-beam sculpting at nanometre length scales. Nature, 2001. 412(12 July): p. 166-169.

Fabrication of niobium-based oxides/oxynitrides/nitrides and their applications in dye-sensitized solar cells and anaerobic digestion

NASA Astrophysics Data System (ADS)

Zhang, Taihong; Yun, Sining; Li, Xue; Huang, Xinlei; Hou, Yuzhi; Liu, Yanfang; Li, Jing; Zhou, Xiao; Fang, Wen

2017-02-01

Transition metal compounds (TMCs), as a representative family of functional materials, have attracted great attention in the field of renewable energy. Herein, Nb3.49N4.56O0.44 and NbN are prepared from the nitridation of NbO2 in an NH3 atmosphere. These dual-functional Nb-based compounds were applied to dye-sensitized solar cells (DSSCs) and anaerobic digestion (AD), and the efficiency and stability of these DSSCs and AD systems were systematically evaluated. The Nb3.49N4.56O0.44 counter electrode (CE) exhibited considerable electrocatalytic activity and stability in I3- reduction in DSSCs, achieving photovoltaic performance comparable with Pt (6.36% vs. 7.19%). Furthermore, as accelerants, Nb-based compounds can greatly improve the AD environment, increasing substrate utilization and decreasing the hazards in the digestate. Compared with the control sample (409.2 mL/g·VS and 29.55%), substantially higher cumulative biogas production (437.1-522.7 mL/g·VS) and chemical oxygen demand removal rates (56.08%-65.19%) were achieved using Nb-based accelerants in the AD system. The nitridation technique is an effective and general means of converting Nb-based oxides into oxynitrides and nitrides. The Nb-based compounds with high electrocatalytic activities showed promise for DSSCs applications, while greatly enhancing the biodegradability of the AD system as accelerants. These findings could pave the way for multifunctional applications of TMCs in renewable energy fields.

11% efficiency solid-state dye-sensitized solar cells with copper(II/I) hole transport materials

PubMed Central

Cao, Yiming; Saygili, Yasemin; Ummadisingu, Amita; Teuscher, Joël; Luo, Jingshan; Pellet, Norman; Giordano, Fabrizio; Zakeeruddin, Shaik Mohammed; Moser, Jacques -E.; Freitag, Marina; Hagfeldt, Anders; Grätzel, Michael

2017-01-01

Solid-state dye-sensitized solar cells currently suffer from issues such as inadequate nanopore filling, low conductivity and crystallization of hole-transport materials infiltrated in the mesoscopic TiO2 scaffolds, leading to low performances. Here we report a record 11% stable solid-state dye-sensitized solar cell under standard air mass 1.5 global using a hole-transport material composed of a blend of [Cu (4,4′,6,6′-tetramethyl-2,2′-bipyridine)2](bis(trifluoromethylsulfonyl)imide)2 and [Cu (4,4′,6,6′-tetramethyl-2,2′-bipyridine)2](bis(trifluoromethylsulfonyl)imide). The amorphous Cu(II/I) conductors that conduct holes by rapid hopping infiltrated in a 6.5 μm-thick mesoscopic TiO2 scaffold are crucial for achieving such high efficiency. Using time-resolved laser photolysis, we determine the time constants for electron injection from the photoexcited sensitizers Y123 into the TiO2 and regeneration of the Y123 by Cu(I) to be 25 ps and 3.2 μs, respectively. Our work will foster the development of low-cost solid-state photovoltaic based on transition metal complexes as hole conductors. PMID:28598436

High-efficiency solid state power amplifier

NASA Technical Reports Server (NTRS)

Wallis, Robert E. (Inventor); Cheng, Sheng (Inventor)

2005-01-01

A high-efficiency solid state power amplifier (SSPA) for specific use in a spacecraft is provided. The SSPA has a mass of less than 850 g and includes two different X-band power amplifier sections, i.e., a lumped power amplifier with a single 11-W output and a distributed power amplifier with eight 2.75-W outputs. These two amplifier sections provide output power that is scalable from 11 to 15 watts without major design changes. Five different hybrid microcircuits, including high-efficiency Heterostructure Field Effect Transistor (HFET) amplifiers and Monolithic Microwave Integrated Circuit (MMIC) phase shifters have been developed for use within the SSPA. A highly efficient packaging approach enables the integration of a large number of hybrid circuits into the SSPA.

High energy efficient solid state laser sources

NASA Technical Reports Server (NTRS)

Byer, Robert L.

1987-01-01

Diode-laser-pumped solid-state laser oscillators and nonlinear processes were investigated. A new generation on nonplanar oscillator was fabricated, and it is anticipated that passive linewidths will be pushed to the kilohertz regime. A number of diode-pumped laser transitions were demonstrated in the rod configuration. Second-harmonic conversion efficiencies as high as 15% are routinely obtained in a servo-locked external resonant doubling crystal at 15 mW cw input power levels at 1064 nm.

Tunable hole injection of solution-processed polymeric carbon nitride towards efficient organic light-emitting diode

NASA Astrophysics Data System (ADS)

Zhang, Xiaowen; Zheng, Qinghong; Tang, Zhenyu; Li, Wanshu; Zhang, Yan; Xu, Kai; Xue, Xiaogang; Xu, Jiwen; Wang, Hua; Wei, Bin

2018-02-01

Polymeric carbon nitride (CNxHy) has been facilely synthesized from dicyandiamide and functions as a solution-processed hole injection layer in organic light-emitting diodes (OLEDs). The measurements using X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and impedance spectroscopy elucidate that CNxHy exhibits superior film morphology and extra electric properties such as tailored work function and tunable hole injection. The luminous efficiency of CNxHy-based OLED is found to improve by 76.6% in comparison to the counterpart using favorite solution-processed poly(ethylene dioxythiophene):poly(styrene sulfonate) as the hole injection layer. Our results also pave a way for broadening carbon nitride applications in organic electronics using the solution process.

Nitride Metal-Semiconductor Superlattices for Solid State Thermionic Energy Conversion

NASA Astrophysics Data System (ADS)

Wortman, Robert; Schroeder, Jeremy; Burmistrova, Polina; Zebarjadi, Mona; Bian, Zhixi; Shakouri, Ali; Sands, Timothy

2009-03-01

A new class of thermoelectric materials based off of superlattices have been proposed that show a potential for enhanced thermoelectric performance^1,2. The increase of thermoelectric figure-of-merit ZT of these materials is due to both the energy filtering effect of the Schottky barriers as well as the reduced thermal conductivity that results from increased interface density. Our work has centered on the metal-semiconductor materials system of HfN-ScN. These are both high temperature materials (Tm> 2500C). They have the same rocksalt crystal structure and similar lattice constants, allowing epitaxial growth. We have grown superlattices of these materials via DC magnetron sputtering. Results from x-ray diffraction, and electrical and thermal tests will be presented. Their potential as thermoelectric energy conversion materials will be discussed. 1 G. D. Mahan et al, Phys. Rev. Lett., 80, 4016 (1998) 2 D. Vashaee et al, Phys. Rev. Lett. 92, 106103 (2004)

Melem-based derivatives as metal-free photocatalysts for simultaneous reduction of Cr(VI) and degradation of 5-Sulfosalicylic acid.

PubMed

Lan, Huachun; Li, Lili; Liu, Huijuan; An, Xiaoqiang; Liu, Fei; Chen, Cuibai; Qu, Jiuhui

2017-12-01

Carbon nitride has been considered as promising metal-free polymers for low-cost photocatalysis. Most prevailing concern about this fantastic material focuses on g-C 3 N 4 , while the potential of other derivatives have been overlooked. Herein, in order to determine the desired derivatives for environmental pollutant treatment, the impact of degree of thermal polymerization on the microstructure of carbon nitride was investigated. Interestingly, melem-based derivatives exhibit 4- and 6-fold enhanced activities than g-C 3 N 4 , when used as synergetic photocatalysts for the simultaneous treatment of heavy metal ions and organic contaminants. According to the fundamental study of reactive species formation, a microstructure-dependent photocatalytic mechanism was established. Hydrogen bond-facilitated trapping of photogenerated holes and superior ability for oxygen molecular activation contributed to the high-performance of melem-based derivatives. In contrast, g-C 3 N 4 shows inferior performance during superoxide radical-dominated photodegradation reactions, as its microstructure is favorable for the generation of . Our research not only sheds new insights into the microstructure design of metal-free carbon nitride photocatalysts, but also has immense scientific and technological values for high-efficiency and synergetic environmental applications. Copyright © 2017 Elsevier Inc. All rights reserved.

Near-Field Infrared Pump-Probe Imaging of Surface Phonon Coupling in Boron Nitride Nanotubes.

PubMed

Gilburd, Leonid; Xu, Xiaoji G; Bando, Yoshio; Golberg, Dmitri; Walker, Gilbert C

2016-01-21

Surface phonon modes are lattice vibrational modes of a solid surface. Two common surface modes, called longitudinal and transverse optical modes, exhibit lattice vibration along or perpendicular to the direction of the wave. We report a two-color, infrared pump-infrared probe technique based on scattering type near-field optical microscopy (s-SNOM) to spatially resolve coupling between surface phonon modes. Spatially varying couplings between the longitudinal optical and surface phonon polariton modes of boron nitride nanotubes are observed, and a simple model is proposed.

Electrochromic window with high reflectivity modulation

DOEpatents

Goldner, Ronald B.; Gerouki, Alexandra; Liu, Te-Yang; Goldner, Mark A.; Haas, Terry E.

2000-01-01

A multi-layered, active, thin film, solid-state electrochromic device having a high reflectivity in the near infrared in a colored state, a high reflectivity and transmissivity modulation when switching between colored and bleached states, a low absorptivity in the near infrared, and fast switching times, and methods for its manufacture and switching are provided. In one embodiment, a multi-layered device comprising a first indium tin oxide transparent electronic conductor, a transparent ion blocking layer, a tungsten oxide electrochromic anode, a lithium ion conducting-electrically resistive electrolyte, a complimentary lithium mixed metal oxide electrochromic cathode, a transparent ohmic contact layer, a second indium oxide transparent electronic conductor, and a silicon nitride encapsulant is provided. Through elimination of optional intermediate layers, simplified device designs are provided as alternative embodiments. Typical colored-state reflectivity of the multi-layered device is greater than 50% in the near infrared, bleached-state reflectivity is less than 40% in the visible, bleached-state transmissivity is greater than 60% in the near infrared and greater than 40% in the visible, and spectral absorbance is less than 50% in the range from 0.65-2.5 .mu.m.

Advancement of High Power Quasi-CW Laser Diode Arrays For Space-based Laser Instruments

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, nathaniel R.; Baggott, Renee S.; Singh, Upendra N.; Kavaya, Michael J.

2004-01-01

Space-based laser and lidar instruments play an important role in NASA s plans for meeting its objectives in both Earth Science and Space Exploration areas. Almost all the lidar instrument concepts being considered by NASA scientist utilize moderate to high power diode-pumped solid state lasers as their transmitter source. Perhaps the most critical component of any solid state laser system is its pump laser diode array which essentially dictates instrument efficiency, reliability and lifetime. For this reason, premature failures and rapid degradation of high power laser diode arrays that have been experienced by laser system designers are of major concern to NASA. This work addresses these reliability and lifetime issues by attempting to eliminate the causes of failures and developing methods for screening laser diode arrays and qualifying them for operation in space.

Low-temperature crack-free Si3N4 nonlinear photonic circuits for CMOS-compatible optoelectronic co-integration

NASA Astrophysics Data System (ADS)

Casale, Marco; Kerdiles, Sebastien; Brianceau, Pierre; Hugues, Vincent; El Dirani, Houssein; Sciancalepore, Corrado

2017-02-01

In this communication, authors report for the first time on the fabrication and testing of Si3N4 non-linear photonic circuits for CMOS-compatible monolithic co-integration with silicon-based optoelectronics. In particular, a novel process has been developed to fabricate low-loss crack-free Si3N4 750-nm-thick films for Kerr-based nonlinear functions featuring full thermal budget compatibility with existing Silicon photonics and front-end Si optoelectronics. Briefly, differently from previous and state-of-the-art works, our nonlinear nitride-based platform has been realized without resorting to commonly-used high-temperature annealing ( 1200°C) of the film and its silica upper-cladding used to break N-H bonds otherwise causing absorption in the C-band and destroying its nonlinear functionality. Furthermore, no complex and fabrication-intolerant Damascene process - as recently reported earlier this year - aimed at controlling cracks generated in thick tensile-strained Si3N4 films has been used as well. Instead, a tailored Si3N4 multiple-step film deposition in 200-mm LPCVD-based reactor and subsequent low-temperature (400°C) PECVD oxide encapsulation have been used to fabricate the nonlinear micro-resonant circuits aiming at generating optical frequency combs via optical parametric oscillators (OPOs), thus allowing the monolithic co-integration of such nonlinear functions on existing CMOS-compatible optoelectronics, for both active and passive components such as, for instance, silicon modulators and wavelength (de-)multiplexers. Experimental evidence based on wafer-level statistics show nitride-based 112-μm-radius ring resonators using such low-temperature crack-free nitride film exhibiting quality factors exceeding Q >3 x 105, thus paving the way to low-threshold power-efficient Kerr-based comb sources and dissipative temporal solitons in the C-band featuring full thermal processing compatibility with Si photonic integrated circuits (Si-PICs).

Nanoscaled Na3PS4 Solid Electrolyte for All-Solid-State FeS2/Na Batteries with Ultrahigh Initial Coulombic Efficiency of 95% and Excellent Cyclic Performances.

PubMed

Wan, Hongli; Mwizerwa, Jean Pierre; Qi, Xingguo; Xu, Xiaoxiong; Li, Hong; Zhang, Qiang; Cai, Liangting; Hu, Yong-Sheng; Yao, Xiayin

2018-04-18

Nanosized Na 3 PS 4 solid electrolyte with an ionic conductivity of 8.44 × 10 -5 S cm -1 at room temperature is synthesized by a liquid-phase reaction. The resultant all-solid-state FeS 2 /Na 3 PS 4 /Na batteries show an extraordinary high initial Coulombic efficiency of 95% and demonstrate high energy density of 611 Wh kg -1 at current density of 20 mA g -1 at room temperature. The outstanding performances of the battery can be ascribed to good interface compatibility and intimate solid-solid contact at FeS 2 electrode/nanosized Na 3 PS 4 solid electrolytes interface. Meanwhile, excellent cycling stability is achieved for the battery after cycling at 60 mA g -1 for 100 cycles, showing a high capacity of 287 mAh g -1 with the capacity retention of 80%.

High voltage DC switchgear development for multi-kW space power system: Aerospace technology development of three types of solid state power controllers for 200-1100VDC with current ratings of 25, 50, and 80 amperes with one type utilizing an electromechanical device

NASA Technical Reports Server (NTRS)

Billings, W. W.

1981-01-01

Three types of solid state power controllers (SSPC's) for high voltage, high power DC system applications were developed. The first type utilizes a SCR power switch. The second type employes an electromechanical power switch element with solid state commutation. The third type utilizes a transistor power switch. Significant accomplishments include high operating efficiencies, fault clearing, high/low temperature performance and vacuum operation.

Novel solid state lasers for Lidar applications at 2 μm

NASA Astrophysics Data System (ADS)

Della Valle, G.; Galzerano, G.; Toncelli, A.; Tonelli, M.; Laporta, P.

2005-09-01

A review on the results achieved by our group in the development of novel solid-state lasers for Lidar applications at 2 μm is presented. These lasers, based on fluoride crystals (YLF4, BaY2F8, and KYF4) doped with Tm and Ho ions, are characterized by high-efficiency and wide wavelength tunability around 2 μm. Single crystals of LiYF4, BaY2F8, and KYF4 codoped with the same Tm3+ and Ho3+ concentrations were successfully grown by the Czochralski method. The full spectroscopic characterization of the different laser crystals and the comparison between the laser performance are presented. Continuous wave operation was efficiently demonstrated by means of a CW diode-pumping. These oscillators find interesting applications in the field of remote sensing (Lidar and Dial systems) as well as in high-resolution molecular spectroscopy, frequency metrology, and biomedical applications.

Friction of water on graphene and hexagonal boron nitride from ab initio methods: very different slippage despite very similar interface structures.

PubMed

Tocci, Gabriele; Joly, Laurent; Michaelides, Angelos

2014-12-10

Friction is one of the main sources of dissipation at liquid water/solid interfaces. Despite recent progress, a detailed understanding of water/solid friction in connection with the structure and energetics of the solid surface is lacking. Here, we show for the first time that ab initio molecular dynamics can be used to unravel the connection between the structure of nanoscale water and friction for liquid water in contact with graphene and with hexagonal boron nitride. We find that although the interface presents a very similar structure between the two sheets, the friction coefficient on boron nitride is ≈ 3 times larger than that on graphene. This comes about because of the greater corrugation of the energy landscape on boron nitride arising from specific electronic structure effects. We discuss how a subtle dependence of the friction on the atomistic details of a surface, which is not related to its wetting properties, may have a significant impact on the transport of water at the nanoscale, with implications for the development of membranes for desalination and for osmotic power harvesting.

Facile synthesis of magnetic carbon nitride nanosheets and its application in magnetic solid phase extraction for polycyclic aromatic hydrocarbons in edible oil samples.

PubMed

Zheng, Hao-Bo; Ding, Jun; Zheng, Shu-Jian; Zhu, Gang-Tian; Yuan, Bi-Feng; Feng, Yu-Qi

2016-01-01

In this study, we proposed a method to fabricate magnetic carbon nitride (CN) nanosheets by simple physical blending. Low-cost CN nanosheets prepared by urea possessed a highly π-conjugated structure; therefore the obtained composites were employed as magnetic solid-phase extraction (MSPE) sorbent for extraction of polycyclic aromatic hydrocarbons (PAHs) in edible oil samples. Moreover, sample pre-treatment time could be carried out within 10 min. Thus, a simple and cheap method for the analysis of PAHs in edible oil samples was established by coupling magnetic CN nanosheets-based MSPE with gas chromatography-mass spectrometry (GC/MS) analysis. Limits of quantitation (LOQs) for eight PAHs ranged from 0.4 to 0.9 ng/g. The intra- and inter-day relative standard deviations (RSDs) were less than 15.0%. The recoveries of PAHs for spiked soybean oil samples ranged from 91.0% to 124.1%, with RSDs of less than 10.2%. Taken together, the proposed method offers a simple and cost-effective option for the convenient analysis of PAHs in oil samples. Copyright © 2015 Elsevier B.V. All rights reserved.

Synthesis and Functionalization of Atomic Layer Boron Nitride Nanosheets for Advanced Material Applications

DTIC Science & Technology

2014-06-05

PAGES 5d. PROJECT NUMBER 5e. TASK NUMBER 5f. WORK UNIT NUMBER 5c. PROGRAM ELEMENT NUMBER 5b. GRANT NUMBER 5a. CONTRACT NUMBER Form Approved OMB...Phys., 89, (2001) 5243. [14] M. Depas, R. L. Van Meirhaegue, W. H. Laflère, F. Cardon , Solid- State Electron, 37, (1994) 433. [15] Muhammad Sajjad

Synthesis of metal free ultrathin graphitic carbon nitride sheet for photocatalytic dye degradation of Rhodamine B under visible light irradiation

NASA Astrophysics Data System (ADS)

Rahman, Shakeelur; Momin, Bilal; Higgins M., W.; Annapure, Uday S.; Jha, Neetu

2018-04-01

In recent times, low cost and metal free photocatalyts driven under visible light have attracted a lot of interest. One such photo catalyst researched extensively is bulk graphitic carbon nitride sheets. But the low surface area and weak mobility of photo generated electrons limits its photocatalytic performance in the visible light spectrum. Here we present the facile synthesis of ultrathin graphitic carbon nitride using a cost effective melamine precursor and its application in highly efficient photocatalytic dye degradation of Rhodamine B molecules. Compared to bulk graphitic carbon nitride, the synthesized ultrathin graphitic carbon nitride shows an increase in surface area, a a decrease in optical band gap and effective photogenerated charge separation which facilitates the harvest of visible light irradiation. Due to these optimal properties of ultrathin graphitic carbon nitride, it shows excellent photocatalytic activity with photocatalytic degradation of about 95% rhodamine B molecules in 1 hour.

Microbial battery for efficient energy recovery.

PubMed

Xie, Xing; Ye, Meng; Hsu, Po-Chun; Liu, Nian; Criddle, Craig S; Cui, Yi

2013-10-01

By harnessing the oxidative power of microorganisms, energy can be recovered from reservoirs of less-concentrated organic matter, such as marine sediment, wastewater, and waste biomass. Left unmanaged, these reservoirs can become eutrophic dead zones and sites of greenhouse gas generation. Here, we introduce a unique means of energy recovery from these reservoirs-a microbial battery (MB) consisting of an anode colonized by microorganisms and a reoxidizable solid-state cathode. The MB has a single-chamber configuration and does not contain ion-exchange membranes. Bench-scale MB prototypes were constructed from commercially available materials using glucose or domestic wastewater as electron donor and silver oxide as a coupled solid-state oxidant electrode. The MB achieved an efficiency of electrical energy conversion of 49% based on the combustion enthalpy of the organic matter consumed or 44% based on the organic matter added. Electrochemical reoxidation of the solid-state electrode decreased net efficiency to about 30%. This net efficiency of energy recovery (unoptimized) is comparable to methane fermentation with combined heat and power.

Microbial battery for efficient energy recovery

PubMed Central

Xie, Xing; Ye, Meng; Hsu, Po-Chun; Liu, Nian; Criddle, Craig S.; Cui, Yi

2013-01-01

By harnessing the oxidative power of microorganisms, energy can be recovered from reservoirs of less-concentrated organic matter, such as marine sediment, wastewater, and waste biomass. Left unmanaged, these reservoirs can become eutrophic dead zones and sites of greenhouse gas generation. Here, we introduce a unique means of energy recovery from these reservoirs—a microbial battery (MB) consisting of an anode colonized by microorganisms and a reoxidizable solid-state cathode. The MB has a single-chamber configuration and does not contain ion-exchange membranes. Bench-scale MB prototypes were constructed from commercially available materials using glucose or domestic wastewater as electron donor and silver oxide as a coupled solid-state oxidant electrode. The MB achieved an efficiency of electrical energy conversion of 49% based on the combustion enthalpy of the organic matter consumed or 44% based on the organic matter added. Electrochemical reoxidation of the solid-state electrode decreased net efficiency to about 30%. This net efficiency of energy recovery (unoptimized) is comparable to methane fermentation with combined heat and power. PMID:24043800

A conceptual design study of a high temperature solar thermal receiver (added tasks 6 and 7)

NASA Technical Reports Server (NTRS)

Robertson, C. S.; Mccreight, L. R.; Gatti, A.; Semon, H. W.

1980-01-01

The key component of this concept is a coiled tube of silicon nitride which acts as a heat exchanger appears to be ideal from the standpoint of utilizing structural ceramics at around 2500 F under severe thermal shock conditions. However the size and configuration of this coil are beyond the state of the art for fabricating such materials as silicon nitride and carbide. A two-task program to develop and demonstrate the feasibility of extruding and forming a section of thin walled silicon nitride tubing was undertaken as an addition to the original program. A promising polyvinyl butyral-based binder lubricant was identified. Fourteen full size extrusion experiments were conducted. Two trial firings of 1-1/4 turn helices were made.

First principles calculations of the magnetic and hyperfine properties of Fe/N/Fe and Fe/O/Fe multilayers in the ground state of cohesive energy

NASA Astrophysics Data System (ADS)

dos Santos, A. V.; Samudio Pérez, C. A.; Muenchen, D.; Anibele, T. P.

2015-01-01

The ground state properties of Fe/N/Fe and Fe/O/Fe multilayers were investigated using the first principles calculations. The calculations were performed using the Linearized Augmented Plane Wave (LAPW) method implemented in the Wien2k code. A supercell consisting of one layer of nitride (or oxide) between two layers of Fe in the bcc structure was used to model the structure of the multilayer. The research in new materials also stimulated theoretical and experimental studies of iron-based nitrides due to their variety of structural and magnetic properties for the potential applications as in high strength steels and for high corrosion resistance. It is obvious from many reports that magnetic iron nitrides such as γ-Fe4N and α-Fe16N2 have interesting magnetic properties, among these a high magnetisation saturation and a high density crimp. However, although Fe-N films and multilayers have many potential applications, they can be produced in many ways and are being extensively studied from the theoretical point of view there is no detailed knowledge of their electronic structure. Clearly, efforts to understand the influence of the nitrogen atoms on the entire electronic structure are needed as to correctly interpret the observed changes in the magnetic properties when going from Fe-N bulk compounds to multilayer structures. Nevertheless, the N atoms are not solely responsible for electronics alterations in solid compounds. Theoretical results showed that Fe4X bulk compounds, where X is a variable atom with increasing atomic number (Z), the nature of bonding between X and adjacent Fe atoms changes from more covalent to more ionic and the magnetic moments of Fe also increase for Z=7, i.e. N. This is an indicative that atoms with a Z number higher than 7, i.e., O, can produce several new alterations in the entire magnetic properties of Fe multilayers. This paper presents the first results of an ab-initio electronic structure calculations, performed for Fe-N and Fe-O multilayers. Firstly, the formation energy and the cohesive energy of the multilayers are discussed. For optimised values, the cohesive energy of the multilayers to obtain the lattice parameters at the equilibrium ground state was used, i.e. a new methodology for this calculus was applied. Secondly, the magnetic properties and hyperfine interactions (magnetic field, electric field gradient and the isomer shift) of the iron atoms of the multilayers are discussed.

Wafer-Scale and Wrinkle-Free Epitaxial Growth of Single-Orientated Multilayer Hexagonal Boron Nitride on Sapphire.

PubMed

Jang, A-Rang; Hong, Seokmo; Hyun, Chohee; Yoon, Seong In; Kim, Gwangwoo; Jeong, Hu Young; Shin, Tae Joo; Park, Sung O; Wong, Kester; Kwak, Sang Kyu; Park, Noejung; Yu, Kwangnam; Choi, Eunjip; Mishchenko, Artem; Withers, Freddie; Novoselov, Kostya S; Lim, Hyunseob; Shin, Hyeon Suk

2016-05-11

Large-scale growth of high-quality hexagonal boron nitride has been a challenge in two-dimensional-material-based electronics. Herein, we present wafer-scale and wrinkle-free epitaxial growth of multilayer hexagonal boron nitride on a sapphire substrate by using high-temperature and low-pressure chemical vapor deposition. Microscopic and spectroscopic investigations and theoretical calculations reveal that synthesized hexagonal boron nitride has a single rotational orientation with AA' stacking order. A facile method for transferring hexagonal boron nitride onto other target substrates was developed, which provides the opportunity for using hexagonal boron nitride as a substrate in practical electronic circuits. A graphene field effect transistor fabricated on our hexagonal boron nitride sheets shows clear quantum oscillation and highly improved carrier mobility because the ultraflatness of the hexagonal boron nitride surface can reduce the substrate-induced degradation of the carrier mobility of two-dimensional materials.

Beyond the Compositional Threshold of Nanoparticle-Based Materials.

PubMed

Portehault, David; Delacroix, Simon; Gouget, Guillaume; Grosjean, Rémi; Chan-Chang, Tsou-Hsi-Camille

2018-04-17

The design of inorganic nanoparticles relies strongly on the knowledge from solid-state chemistry not only for characterization techniques, but also and primarily for choosing the systems that will yield the desired properties. The range of inorganic solids reported and studied as nanoparticles is however strikingly narrow when compared to the solid-state chemistry portfolio of bulk materials. Efforts to enlarge the collection of inorganic particles are becoming increasingly important for three reasons. First, they can yield materials more performing than current ones for a range of fields including biomedicine, optics, catalysis, and energy. Second, looking outside the box of common compositions is a way to target original properties or to discover genuinely new behaviors. The third reason lies in the path followed to reach these novel nano-objects: exploration and setup of new synthetic approaches. Indeed, willingness to access original nanoparticles faces a synthetic challenge: how to reach nanoparticles of solids that originally belong to the realm of solid-state chemistry and its typical protocols at high temperature? To answer this question, alternative reaction pathways must be sought, which may in turn provide tracks for new, untargeted materials. The corresponding strategies require limiting particle growth by confinement at high temperatures or by decreasing the synthesis temperature. Both approaches, especially the latter, provide a nice playground to discover metastable solids never reported before. The aim of this Account is to raise attention to the topic of the design of new inorganic nanoparticles. To do so, we take the perspective of our own work in the field, by first describing synthetic challenges and how they are addressed by current protocols. We then use our achievements to highlight the possibilities offered by new nanomaterials and to introduce synthetic approaches that are not in the focus of recent literature but hold, in our opinion, great promise. We will span methods of low temperature "chimie douce" aqueous synthesis coupled to microwave heating, sol-gel chemistry and processing coupled to solid state reactions, and then molten salt synthesis. These protocols pave the way to metastable low valence oxyhydroxides, vanadates, perovskite oxides, boron carbon nitrides, and metal borides, all obtained at the nanoscale with structural and morphological features differing from "usual" nanomaterials. These nano-objects show original properties, from sensing, thermoelectricity, charge and spin transports, photoluminescence, and catalysis, which require advanced characterization of surface states. We then identify future trends of synthetic methodologies that will merit further attention in this burgeoning field, by emphasizing the importance of unveiling reaction mechanisms and coupling experiments with modeling.

Ultraviolet light emitting diodes and bio-aerosol sensing

NASA Astrophysics Data System (ADS)

Davitt, Kristina M.

Recent interest in compact ultraviolet (UV) light emitters has produced advances in material quality and device performance from aluminum-rich alloys of the nitride semiconductor system. The epitaxial growth of device structures from this material poses remarkable challenges, and state-of-the-art in semiconductor UV light sources at wavelengths shorter than 350 nm is currently limited to LEDs. A portion of the work presented in this thesis involves the design and characterization of UV LED structures, with particular focus on sub-300 nm LEDs which have only been demonstrated within the last four years. Emphasis has been placed on the integration of early devices with modest efficiencies and output powers into a practical, fluorescence-based bio-sensing instrument. The quality of AlGaInN and AlGaN-based materials is characterized by way of the performance of 340 nm and 290 nm LEDs respectively. A competitive level of device operation is achieved, although much room remains for improvement in the efficiency of light emission from this material system. A preliminary investigation of 300 nm LEDs grown on bulk AIN shows promising electrical and optical characteristics, and illustrates the numerous advantages that this native substrate offers to the epitaxy of wide bandgap nitride semiconductors. The application of UV LEDs to the field of bio-aerosol sensing is pursued by constructing an on-the-fly fluorescence detection system. A linear array of UV LEDs is designed and implemented, and the capability of test devices to excite native fluorescence from bacterial spores is established. In order to fully capitalize on the reduction in size afforded by LEDs, effort is invested in re-engineering the remaining sensor components. Operation of a prototype system for physically sorting bio-aerosols based on fluorescence spectra acquired in real-time from single airborne particles excited by a UV-LED array is demonstrated using the bio-fluorophores NADH and tryptophan. Sensor performance is shown to be ultimately linked to the material quality of high aluminum fraction nitrides, and is expected to show progress as this field matures.

Efficiency and threshold pump intensity of CW solar-pumped solid-state lasers

NASA Technical Reports Server (NTRS)

Hwang, In H.; Lee, Ja H.

1991-01-01

The authors consider the relation between the threshold pumping intensity, the material properties, the resonator parameters, and the ultimate slope efficiencies of various solid-state laser materials for solar pumping. They clarify the relation between the threshold pump intensity and the material parameters and the relation between the ultimate slope efficiency and the laser resonator parameters such that a design criterion for the solar-pumped solid-state laser can be established. Among the laser materials evaluated, alexandrite has the highest slope efficiency of about 12.6 percent; however, it does not seem to be practical for a solar-pumped laser application because of its high threshold pump intensity. Cr:Nd:GSGG is the most promising for solar-pumped lasing. Its threshold pump intensity is about 100 air-mass-zero (AM0) solar constants and its slope efficiency is about 12 percent when thermal deformation is completely prevented.

Oligothiophene-based colorimetric and ratiometric fluorescence dual-channel cyanide chemosensor: Sensing ability, TD-DFT calculations and its application as an efficient solid state sensor.

PubMed

Lan, Linxin; Li, Tianduo; Wei, Tao; Pang, He; Sun, Tao; Wang, Enhua; Liu, Haixia; Niu, Qingfen

2018-03-15

An oligothiophene-based colorimetric and ratiometric fluorescence dual-channel cyanide chemosensor 3 T-2CN was reported. Sensor 3 T-2CN showed both naked-eye recognition and ratiometric fluorescence response for CN - with an excellent selectivity and high sensitivity. The sensing mechanism based on the nucleophilic attack of CN - on the vinyl CC bond has been successfully confirmed by the optical measurements, 1 H NMR titration, FT-IR spectra as well as the DFT/TD-DFT calculations. Moreover, the detection limit was calculated to be 0.19μM, which is much lower than the maximum permission concentration in drinking water (1.9μM). Importantly, test strips (filter paper and TLC plates) containing 3 T-2CN were fabricated, which could act as a practical and efficient solid state optical sensor for CN - in field measurements. Copyright © 2017 Elsevier B.V. All rights reserved.

Promoting Charge Separation and Injection by Optimizing the Interfaces of GaN:ZnO Photoanode for Efficient Solar Water Oxidation.

PubMed

Wang, Zhiliang; Zong, Xu; Gao, Yuying; Han, Jingfeng; Xu, Zhiqiang; Li, Zheng; Ding, Chunmei; Wang, Shengyang; Li, Can

2017-09-13

Photoelectrochemical water splitting provides an attractive way to store solar energy in molecular hydrogen as a kind of sustainable fuel. To achieve high solar conversion efficiency, the most stringent criteria are effective charge separation and injection in electrodes. Herein, efficient photoelectrochemical water oxidation is realized by optimizing charge separation and surface charge transfer of GaN:ZnO photoanode. The charge separation can be greatly improved through modified moisture-assisted nitridation and HCl acid treatment, by which the interfaces in GaN:ZnO solid solution particles are optimized and recombination centers existing at the interfaces are depressed in GaN:ZnO photoanode. Moreover, a multimetal phosphide of NiCoFeP was employed as water oxidation cocatalyst to improve the charge injection at the photoanode/electrolyte interface. Consequently, it significantly decreases the overpotential and brings the photocurrent to a benchmark of 3.9 mA cm -2 at 1.23 V vs RHE and a solar conversion efficiency over 1% was obtained.

Investigation of Strain-Relaxation Characteristics of Nitrides Grown on Si(110) by Metalorganic Chemical Vapor Deposition Using X-ray Diffraction

NASA Astrophysics Data System (ADS)

Jiang, Quanzhong; Lewins, Christopher J.; Allsopp, Duncan W. E.; Bowen, Chris R.; Wang, Wang N.

2013-08-01

This paper describes the effect of an interfacial biaxial stress field on the dislocation formation dynamics during epitaxial growth of nitrides on Si(110). The anisotropic mismatch stress between a 2-fold symmetry Si(110) atomic plane and the AlN basal plane of 6-fold symmetry may be relaxed through the creation of additional characteristic dislocations, as proposed by Ruiz-Zepeda et al. with Burgers vectors: b= 1/2[bar 2110] and b= [1bar 210], +/-60° from [11bar 20]. The dislocations generated under such a biaxial stress field appear annihilating more efficiently with increasing thickness, leading to high-quality nitride epilayers on Si(110) for improved quantum efficiency of InGaN/GaN quantum wells.

Light-matter Interactions in Semiconductors and Metals: From Nitride Optoelectronics to Quantum Plasmonics

NASA Astrophysics Data System (ADS)

Narang, Prineha

This thesis puts forth a theory-directed approach coupled with spectroscopy aimed at the discovery and understanding of light-matter interactions in semiconductors and metals. The first part of the thesis presents the discovery and development of Zn-IV nitride materials. The commercial prominence in the optoelectronics industry of tunable semiconductor alloy materials based on nitride semiconductor devices, specifically InGaN, motivates the search for earth-abundant alternatives for use in efficient, high-quality optoelectronic devices. II-IV-N2 compounds, which are closely related to the wurtzite-structured III-N semiconductors, have similar electronic and optical properties to InGaN namely direct band gaps, high quantum efficiencies and large optical absorption coefficients. The choice of different group II and group IV elements provides chemical diversity that can be exploited to tune the structural and electronic properties through the series of alloys. The first theoretical and experimental investigation of the ZnSnxGe1--xN2 series as a replacement for III-nitrides is discussed here. The second half of the thesis shows ab-initio calculations for surface plasmons and plasmonic hot carrier dynamics. Surface plasmons, electromagnetic modes confined to the surface of a conductor-dielectric interface, have sparked renewed interest because of their quantum nature and their broad range of applications. The decay of surface plasmons is usually a detriment in the field of plasmonics, but the possibility to capture the energy normally lost to heat would open new opportunities in photon sensors, energy conversion devices and switching. A theoretical understanding of plasmon-driven hot carrier generation and relaxation dynamics in the ultrafast regime is presented here. Additionally calculations for plasmon-mediated upconversion as well as an energy-dependent transport model for these non-equilibrium carriers are shown. Finally, this thesis gives an outlook on the potential of non-equilibrium phenomena in metals and semiconductors for future light-based technologies.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreno, Gilbert

The objective for this project is to develop thermal management strategies to enable efficient and high-temperature wide-bandgap (WBG)-based power electronic systems (e.g., emerging inverter and DC-DC converter). Device- and system-level thermal analyses are conducted to determine the thermal limitations of current automotive power modules under elevated device temperature conditions. Additionally, novel cooling concepts and material selection will be evaluated to enable high-temperature silicon and WBG devices in power electronics components. WBG devices (silicon carbide [SiC], gallium nitride [GaN]) promise to increase efficiency, but will be driven as hard as possible. This creates challenges for thermal management and reliability.

GaN nanophosphors for white-light applications

NASA Astrophysics Data System (ADS)

Kumar, Mirgender; Singh, V. P.; Dubey, Sarvesh; Suh, Youngsuk; Park, Si-Hyun

2018-01-01

GaN nanoparticles (NPs) were synthesized by carbothermal reduction combined with nitridation, using Ga2O3 powder and graphitic carbon nitride (g-C3N4) as precursors. Characterization of the NPs was performed by X-ray diffraction, scanning electron microscopy, and room-temperature photoluminescence measurements. X-ray photoelectron spectroscopy was also performed to detect the chemical states of the different species. A universal yellow luminescence (YL) band was observed from complexes of Ga vacancies with O anti-sites and of O anti-sites with C. Further increments in the C content were observed with continued growth and induced an additional blue luminescence (BL) band. Tuning of the YL and BL bands resulted in white-light emission under certain experimental conditions, thus offering a new way of employing GaN nanophosphors for solid-state white lighting. Calculations of the correlated color temperature and color-quality scale parameters confirmed the utility of the experimental process for different applications.

Electronic Biosensors Based on III-Nitride Semiconductors.

PubMed

Kirste, Ronny; Rohrbaugh, Nathaniel; Bryan, Isaac; Bryan, Zachary; Collazo, Ramon; Ivanisevic, Albena

2015-01-01

We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

The role of pore geometry in single nanoparticle detection

DOE PAGES

Davenport, Matthew; Healy, Ken; Pevarnik, Matthew; ...

2012-08-22

In this study, we observe single nanoparticle translocation events via resistive pulse sensing using silicon nitride pores described by a range of lengths and diameters. Pores are prepared by focused ion beam milling in 50 nm-, 100 nm-, and 500 nm-thick silicon nitride membranes with diameters fabricated to accommodate spherical silica nanoparticles with sizes chosen to mimic that of virus particles. In this manner, we are able to characterize the role of pore geometry in three key components of the detection scheme, namely, event magnitude, event duration, and event frequency. We find that the electric field created by the appliedmore » voltage and the pore’s geometry is a critical factor. We develop approximations to describe this field, which are verified with computer simulations, and interactions between particles and this field. In so doing, we formulate what we believe to be the first approximation for the magnitude of ionic current blockage that explicitly addresses the invariance of access resistance of solid-state pores during particle translocation. These approximations also provide a suitable foundation for estimating the zeta potential of the particles and/or pore surface when studied in conjunction with event durations. We also verify that translocation achieved by electro-osmostic transport is an effective means of slowing translocation velocities of highly charged particles without compromising particle capture rate as compared to more traditional approaches based on electrophoretic transport.« less

Highly Active GaN-Stabilized Ta3 N5 Thin-Film Photoanode for Solar Water Oxidation.

PubMed

Zhong, Miao; Hisatomi, Takashi; Sasaki, Yutaka; Suzuki, Sayaka; Teshima, Katsuya; Nakabayashi, Mamiko; Shibata, Naoya; Nishiyama, Hiroshi; Katayama, Masao; Yamada, Taro; Domen, Kazunari

2017-04-18

Ta 3 N 5 is a very promising photocatalyst for solar water splitting because of its wide spectrum solar energy utilization up to 600 nm and suitable energy band position straddling the water splitting redox reactions. However, its development has long been impeded by poor compatibility with electrolytes. Herein, we demonstrate a simple sputtering-nitridation process to fabricate high-performance Ta 3 N 5 film photoanodes owing to successful synthesis of the vital TaO δ precursors. An effective GaN coating strategy is developed to remarkably stabilize Ta 3 N 5 by forming a crystalline nitride-on-nitride structure with an improved nitride/electrolyte interface. A stable, high photocurrent density of 8 mA cm -2 was obtained with a CoPi/GaN/Ta 3 N 5 photoanode at 1.2 V RHE under simulated sunlight, with O 2 and H 2 generated at a Faraday efficiency of unity over 12 h. Our vapor-phase deposition method can be used to fabricate high-performance (oxy)nitrides for practical photoelectrochemical applications. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Essentials for Successful and Widespread LED Lighting Adoption

NASA Astrophysics Data System (ADS)

Khan, Nisa

2011-03-01

Solid-state lighting (SSL), with light-emitting diodes (LEDs) as the light source, is a growing and essential field, particularly in regard to the heightened need for global energy efficiency. In recent years, SSL has experienced remarkable advances in efficiency, light output magnitude and quality. Thus such diverse applications as signage, message centers, displays, and special lighting are now adopting LEDs, taking 2010's market to 9.1 billion - 68% growth from the previous year! While this is promising, future growth in both display and lighting applications will rely upon unveiling deeper understanding and key innovations in LED lighting science and technologies. In this presentation, some LED lighting fundamentals, engineering challenges and novel solutions will be discussed to address reduction in efficiency (a.k.a. droop) at high currents, and to obtain uniform light distribution for overcoming LEDs' directional nature. The droop phenomenon has been a subject of much controversy in the industry and despite several studies and claims, a widely-accepted explanation still lacks because of counter arguments and experiments. Recently several research studies have identified that the droop behavior in nitride-based LEDs beyond certain current density ranges can only be comprehensively explained if the current leaking beyond the LED active region is included. Although such studies have identified a few useful current leakage mechanisms outside the active region, no one has included current leakage, due to non-ideal, 3-D device structures that create undesirable current distribution inside and outside the active region. This talk will address achieving desirable current distributions from optimized 3-D device structures that should reduce current leakage and hence the droop behavior. In addition to novel LED design solutions for droop reduction and uniform light distribution, the talk will address cost and yield concerns as they pertain to core material scarcity. Such solutions are expected to make LED lights more energy efficient, pleasant in appearance, longer-lasting, affordable, and thus suitable for green living.

Estimation of the Thermodynamic Efficiency of a Solid-State Cooler Based on the Multicaloric Effect

NASA Astrophysics Data System (ADS)

Starkov, A. S.; Pakhomov, O. V.; Rodionov, V. V.; Amirov, A. A.; Starkov, I. A.

2018-03-01

The thermodynamic efficiency of using the multicaloric effect (μCE) in solid-state cooler systems has been studied in comparison to single-component caloric effects. This approach is illustrated by example of the Brayton cycle for μCE and magnetocaloric effect (MCE). Based on the results of experiments with Fe48Rh52-PbZr0.53Ti0.47O3 two-layer ferroic composite, the temperature dependence of the relative efficiency is determined and the temperature range is estimated in which the μCE is advantageous to MCE. The proposed theory of μCE is compared to experimental data.

Titanium nitride electrodes for thermoelectric generators

DOEpatents

Novak, Robert F.; Schmatz, Duane J.; Hunt, Thomas K.

1987-12-22

The invention is directed to a composite article suitable for use in thermoelectric generators. The article comprises a thin film of titanium nitride as an electrode deposited onto solid electrolyte. The invention is also directed to the method of making same.

Solid-State Powered X-band Accelerator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Othman, Mohamed A.K.; Nann, Emilio A.; Dolgashev, Valery A.

2017-03-06

In this report we disseminate the hot test results of an X-band 100-W solid state amplifier chain for linear accelerator (linac) applications. Solid state power amplifiers have become increasingly attractive solutions for achieving high power in radar and maritime applications. Here the performance of solid state amplifiers when driving an RF cavity is investigated. Commercially available, matched and fully-packaged GaN on SiC HEMTs are utilized, comprising a wideband driver stage and two power stages. The amplifier chain has a high poweradded- efficiency and is able to supply up to ~1.2 MV/m field gradient at 9.2 GHz in a simple testmore » cavity, with a peak power exceeding 100 W. These findings set forth the enabling technology for solid-state powered linacs.« less

The adhesion solidity, physico-mechanical and tribological properties of the coating of titanium nitride

NASA Astrophysics Data System (ADS)

Krivina, L. A.; Tarasenko, Yu P.; Fel, Ya A.

2017-05-01

Influence of variable technological factors (arch current, fractional pressure of gas in the camera) on structure, physic-mechanical and tribological features of an ion-plasma coating of titanium nitride has been investigated. The adhesion solidity has been put to the test and the mechanism of destruction of a covering has been also researched by a skretch-test method. The optimal mode of spraying at which the formation of the nanostructured bar coating of TiN has been defined. The covering offers an optimal combination of physic-mechanical, tribological and solidity features.

Analysis and modeling of hot extrusion die for its service life enhancement

NASA Astrophysics Data System (ADS)

Akhtar, Syed Sohail

Aluminum extrusion finds extensive application in the construction, automobile and aerospace industries. High pressures, elevated temperatures, complex and intricate section geometries lead to repeated mechanical and thermal stresses in the die and affiliated tooling. Product rework and rejects can be traced back to various defects spread over the die life cycle: die design, die manufacture and heat treatment, process parameters, inprocess die maintenance/correction and, billet type and quality. Therefore, improved and efficient service life of die and related tooling used in the extrusion press is one the most important factors in maximizing productivity and minimizing cost for ensuring the economical efficiency of an aluminum extrusion plant. How often a die has to be scrapped and replaced with a new one directly contributes to the commercial viability of producing a certain profile. The focus of the current work is on three distinct yet inter-related studies pertaining to the improvement of aluminum extrusion die. Study-A (Die Failure Analysis) is an investigation of various modes and critical failure types based on industrial data (Chapter-2 ), examination of failed dies and finite element simulation for identification of critical process parameters and design features in die fatigue-life (Chapter-3). In Study-B (Die Surface Hardening Treatment), two-stage controlled gas nitriding process for H13 steel is evaluated, both experimentally and numerically, in terms of nitrided case morphology and properties (Chapter-4) followed by experimental and numerical investigation of the effects of repeated nitriding (Chapter-5), pre-nitriding surface preparation (Chapter-6) and die profile geometry (Chapter-7) on nitriding performance in regard to die service life. In Study-C (Effect of Billet Quality on Die Life), the effect of billet quality and related influencing extrusion parameters on the die service life is investigated based on industrial data and some regression-based die life models are proposed (Chapter-8 ). This is followed by a detailed microstructural investigation of different billet samples and finite element analysis of extrusion process to observe the influence of smelter (primary) and recycled (secondary) billets on the useful life of extrusion die (Chapter-9).

The Operating Principle of a Fully Solid State Active Magnetic Regenerator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abdelaziz, Omar

As an alternative refrigeration technology, magnetocaloric refrigeration has the potential to be safer, quieter, more efficient, and more environmentally friendly than the conventional vapor compression refrigeration technology. Most of the reported active magnetic regenerator (AMR) systems that operate based on the magnetocaloric effect use heat transfer fluid to exchange heat, which results in complicated mechanical subsystems and components such as rotating valves and hydraulic pumps. This paper presents an operating principle of a fully solid state AMR, in which an alternative mechanism for heat transfer between the AMR and the heat source/sink is proposed. The operating principle of the fullymore » solid state AMR is based on moving rods/sheets (e.g. copper, brass, iron or aluminum), which are employed to replace the heat transfer fluid. Such fully solid state AMR would provide a significantly higher heat transfer rate than a conventional AMR because the conductivity of moving solid rods/plates is high and it enables the increase in the machine operating frequency hence the cooling capacity. The details of operating principle are presented and discussed here. One of the key enabling features for this technology is the contact between the moving rods/sheets and magnetocaloric material, and heat exchange mechanism at the heat source/sink. This paper provides an overview of the design for a fully solid state magnetocaloric refrigeration system along with guidelines for their optimal design.« less

Dye-impregnated polymer-filled porous glass: a new composite material for solid state dye lasers and laser beam control optical elements (Abstract Only)

NASA Astrophysics Data System (ADS)

Koldunov, M. F.; Manenkov, Alexander A.; Sitnikov, N. M.; Dolotov, S. M.

1994-07-01

Polymer-filled microporous glass (PFMG) composite materials have been recently proposed as a proper host for dyes to create solid-state dye lasers and laser beam control elements (Q-switchers, etc.) [1,2]. In this paper we report investigation of some laser-related properties of Polymethilmethacrylate (PMAA) - filled porous glass doped with Rhodamine 6G perchiorate (active lasing dye) and 1055 dye (passive bleachable dye): laser induced damage threshold, lasmg efficiency, bleaching efficiency, and microhardness have been measured. All these characteristics have been found to be rather high indicating that PFMG composite materials are perspective hosts for dye impregnation and fabrication highly effective solid-state dye lasers and other laser related elements (Q-switchers, mode-lockers, modeselectors, spatial filters).

Enhanced production of lovastatin by Omphalotus olearius (DC.) Singer in solid state fermentation.

PubMed

Atlı, Burcu; Yamaç, Mustafa; Yıldız, Zeki; Isikhuemnen, Omoanghe S

2015-01-01

Although lovastatin production has been reported for different microorganism species, there is limited information about lovastatin production by basidiomycetes. The optimization of culture parameters that enhances lovastatin production by Omphalotus olearius OBCC 2002 was investigated, using statistically based experimental designs under solid state fermentation. The Plackett Burman design was used in the first step to test the relative importance of the variables affecting production of lovastatin. Amount and particle size of barley were identified as efficient variables. In the latter step, the interactive effects of selected efficient variables were studied with a full factorial design. A maximum lovastatin yield of 139.47mg/g substrate was achieved by the fermentation of 5g of barley, 1-2mm particle diam., at 28°C. This study showed that O. olearius OBCC 2002 has a high capacity for lovastatin production which could be enhanced by using solid state fermentation with novel and cost-effective substrates, such as barley. Copyright © 2013 Revista Iberoamericana de Micología. Published by Elsevier Espana. All rights reserved.

Anisotropy of the nitrogen conduction states in the group III nitrides studied by polarized x-ray absorption

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lawniczak-Jablonska, K.; Liliental-Weber, Z.; Gullikson, E.M.

1997-04-01

Group III nitrides (AlN, GaN, and InN) consist of the semiconductors which appear recently as a basic materials for optoelectronic devices active in the visible/ultraviolet spectrum as well as high-temperature and high-power microelectronic devices. However, understanding of the basic physical properties leading to application is still not satisfactory. One of the reasons consists in unsufficient knowledge of the band structure of the considered semiconductors. Several theoretical studies of III-nitrides band structure have been published but relatively few experimental studies have been carried out, particularly with respect to their conduction band structure. This motivated the authors to examine the conduction bandmore » structure projected onto p-states of the nitrogen atoms for AlN, GaN and InN. An additional advantage of their studies is the availability of the studied nitrides in two structures, hexagonal (wurtzite) and cubic (zincblende). This offers an opportunity to gain information about the role of the anisotropy of electronic band states in determining various physical properties.« less

Device fabrication, characterization, and thermal neutron detection response of LiZnP and LiZnAs semiconductor devices

NASA Astrophysics Data System (ADS)

Montag, Benjamin W.; Ugorowski, Philip B.; Nelson, Kyle A.; Edwards, Nathaniel S.; McGregor, Douglas S.

2016-11-01

Nowotny-Juza compounds continue to be explored as candidates for solid-state neutron detectors. Such a device would have greater efficiency, in a compact form, than present day gas-filled 3He and 10BF3 detectors. The 6Li(n,t)4He reaction yields a total Q-value of 4.78 MeV, larger than 10B, an energy easily identified above background radiations. Hence, devices fabricated from semiconductor compounds having either natural Li (nominally 7.5% 6Li) or enriched 6Li (usually 95% 6Li) as constituent atoms may provide a material for compact high efficiency neutron detectors. Starting material was synthesized by preparing equimolar portions of Li, Zn, and As sealed under vacuum (10-6 Torr) in quartz ampoules lined with boron nitride and subsequently reacted in a compounding furnace [1]. The raw synthesized material indicated the presence high impurity levels (material and electrical property characterizations). A static vacuum sublimation in quartz was performed to help purify the synthesized material [2,3]. Bulk crystalline samples were grown from the purified material [4,5]. Samples were cut using a diamond wire saw, and processed into devices. Bulk resistivity was determined from I-V curve measurements, ranging from 106-1011 Ω cm. Devices were characterized for sensitivity to 5.48 MeV alpha particles, 337 nm laser light, and neutron sensitivity in a thermal neutron diffracted beam at the Kansas State University TRIGA Mark II nuclear reactor. Thermal neutron reaction product charge induction was measured with a LiZnP device, and the reaction product spectral response was observed.

Organic Fluorescent Dyes Supported on Activated Boron Nitride: A Promising Blue Light Excited Phosphors for High-Performance White Light-Emitting Diodes

PubMed Central

Li, Jie; Lin, Jing; Huang, Yang; Xu, Xuewen; Liu, Zhenya; Xue, Yanming; Ding, Xiaoxia; Luo, Han; Jin, Peng; Zhang, Jun; Zou, Jin; Tang, Chengchun

2015-01-01

We report an effective and rare-earth free light conversion material synthesized via a facile fabrication route, in which organic fluorescent dyes, i.e. Rhodamine B (RhB) and fluorescein isothiocyanate (FITC) are embedded into activated boron nitride (αBN) to form a composite phosphor. The composite phosphor shows highly efficient Förster resonance energy transfer and greatly improved thermal stability, and can emit at broad visible wavelengths of 500–650 nm under the 466 nm blue-light excitation. By packaging of the composite phosphors and a blue light-emitting diode (LED) chip with transparent epoxy resin, white LED with excellent thermal conductivity, current stability and optical performance can be realized, i.e. a thermal conductivity of 0.36 W/mk, a Commission Internationale de 1'Eclairage color coordinates of (0.32, 0.34), and a luminous efficiency of 21.6 lm·W−1. Our research opens the door toward to the practical long-life organic fluorescent dyes-based white LEDs. PMID:25682730

Molten tin reprocessing of spent nuclear fuel elements

DOEpatents

Heckman, Richard A.

1983-01-01

A method and apparatus for reprocessing spent nuclear fuel is described. Within a containment vessel, a solid plug of tin and nitride precipitates supports a circulating bath of liquid tin therein. Spent nuclear fuel is immersed in the liquid tin under an atmosphere of nitrogen, resulting in the formation of nitride precipitates. The layer of liquid tin and nitride precipitates which interfaces the plug is solidified and integrated with the plug. Part of the plug is melted, removing nitride precipitates from the containment vessel, while a portion of the plug remains solidified to support the liquid tin and nitride precipitates remaining in the containment vessel. The process is practiced numerous times until substantially all of the precipitated nitrides are removed from the containment vessel.

Hydrolytic Unzipping of Boron Nitride Nanotubes in Nitric Acid.

PubMed

Kim, Dukeun; Muramatsu, Hiroyuki; Kim, Yoong Ahm

2017-12-01

Boron nitride nanoribbons (BNNRs) have very attractive electrical and optical properties due to their unique edge states and width-related properties. Herein, for the first time, BNNRs were produced by a simple reflux of boron nitride nanotubes (BNNTs) in nitric acid containing water, which had led to unzipped sidewalls through hydrolysis. Their high reactivity that originated from edges was verified via a strong interaction with methylene blue.

Structural transformations of carbon and boron nitride nanoscrolls at high impact collisions.

PubMed

Woellner, C F; Machado, L D; Autreto, P A S; de Sousa, J M; Galvao, D S

2018-02-14

The behavior of nanostructures under high strain-rate conditions has been the object of theoretical and experimental investigations in recent years. For instance, it has been shown that carbon and boron nitride nanotubes can be unzipped into nanoribbons at high-velocity impacts. However, the response of many nanostructures to high strain-rate conditions is still unknown. In this work, we have investigated the mechanical behavior of carbon (CNS) and boron nitride nanoscrolls (BNS) colliding against solid targets at high velocities, using fully atomistic reactive (ReaxFF) molecular dynamics (MD) simulations. CNS (BNS) are graphene (boron nitride) membranes rolled up into papyrus-like structures. Their open-ended topology leads to unique properties not found in their close-ended analogs, such as nanotubes. Our results show that collision products are mainly determined by impact velocities and by two orientation angles, which define the position of the scroll (i) axis and (ii) open edge relative to the target. Our MD results showed that for appropriate velocities and orientations, large-scale deformations and nanoscroll fractures could occur. We also observed unscrolling (scrolls going back to quasi-planar membranes), scroll unzipping into nanoribbons, and significant reconstruction due to breaking and/or formation of new chemical bonds. For particular edge orientations and velocities, conversion from open to close-ended topology is also possible, due to the fusion of nanoscroll walls.

Structural transformations of carbon and boron nitride nanoscrolls at high impact collisions

NASA Astrophysics Data System (ADS)

Woellner, C. F.; Machado, L. D.; Autreto, P. A. S.; de Sousa, J. M.; Galvao, D. S.

The behavior of nanostructures under high strain-rate conditions has been object of theoretical and experimental investigations in recent years. For instance, it has been shown that carbon and boron nitride nanotubes can be unzipped into nanoribbons at high velocity impacts. However, the response of many nanostructures to high strain-rate conditions is still not completely understood. In this work we have investigated through fully atomistic reactive (ReaxFF) molecular dynamics (MD) simulations the mechanical behavior of carbon (CNS) and boron nitride nanoscrolls (BNS) colliding against solid targets at high velocities,. CNS (BNS) nanoscrolls are graphene (boron nitride) membranes rolled up into papyrus-like structures. Their open-ended topology leads to unique properties not found in close-ended analogues, such as nanotubes. Our results show that the collision products are mainly determined by impact velocities and by two impact angles, which define the position of the scroll (i) axis and (ii) open edge relative to the target. Our MD results showed that for appropriate velocities and orientations large-scale deformations and nanoscroll fracture can occur. We also observed unscrolling (scrolls going back to quasi-planar membranes), scroll unzipping into nanoribbons, and significant reconstruction due to breaking and/or formation of new chemical bonds. For particular edge orientations and velocities, conversion from open to close-ended topology is also possible, due to the fusion of nanoscroll walls.

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

PubMed

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

High Energy Density All Solid State Asymmetric Pseudocapacitors Based on Free Standing Reduced Graphene Oxide-Co3O4 Composite Aerogel Electrodes.

PubMed

Ghosh, Debasis; Lim, Joonwon; Narayan, Rekha; Kim, Sang Ouk

2016-08-31

Modern flexible consumer electronics require efficient energy storage devices with flexible free-standing electrodes. We report a simple and cost-effective route to a graphene-based composite aerogel encapsulating metal oxide nanoparticles for high energy density, free-standing, binder-free flexible pseudocapacitive electrodes. Hydrothermally synthesized Co3O4 nanoparticles are successfully housed inside the microporous graphene aerogel network during the room temperature interfacial gelation at the Zn surface. The resultant three-dimensional (3D) rGO-Co3O4 composite aerogel shows mesoporous quasiparallel layer stack morphology with a high loading of Co3O4, which offers numerous channels for ion transport and a 3D interconnected network for high electrical conductivity. All solid state asymmetric pseudocapacitors employing the composite aerogel electrodes have demonstrated high areal energy density of 35.92 μWh/cm(2) and power density of 17.79 mW/cm(2) accompanied by excellent cycle life.

POSS-Based Electrolyte for Efficient Solid-State Dye-Sensitized Solar Cells at Sub-Zero Temperatures.

PubMed

Lv, Kai; Zhang, Wei; Zhang, Lu; Wang, Zhong-Sheng

2016-03-02

To expand the application of solid-state dye-sensitized solar cells (ssDSSCs) to low temperatures, it is necessary to develop new solid electrolytes with low glass transition temperature (Tg). The Tg is regulated by varying the length of alkyl chain that is connected with the nitrogen atom in the imidazolium ring linked to the polyhedral oligomeric silsesquioxane (POSS). The Tg as low as -8.8 °C is achieved with the POSS grafted with methyl-substituted imidazolium. The effect of alkyl group on the conductivity, Tg, and photovoltaic performance has also been investigated. The conductivity and power conversion efficiency increase with the alkyl length, while the Tg first increases and then decreases with the alkyl length. Among the synthesized POSS-based ionic conductors, the POSS grafted with the methyl-substituted imidazolium yields the highest power conversion efficiency of 6.98% at RT due to its highest conductivity, and the efficiency (6.52%) is still good at -4 °C, as its Tg (-8.8 °C) is lower than the working temperature (-4 °C). This finding suggests that the POSS-based solid electrolyte is promising for subzero-temperature applications of ssDSSCs.

High energy efficient solid state laser sources

NASA Technical Reports Server (NTRS)

Byer, Robert L.

1988-01-01

Recent progress in the development of highly efficient coherent optical sources is reviewed. This work focusses on nonlinear frequency conversion of the highly coherent output of the Non-Planar Ring Laser Oscillators developed earlier in the program, and includes high efficiency second harmonic generation and the operation of optical parametric oscillators for wavelength diversity and tunability.

Nanoscale current uniformity and injection efficiency of nanowire light emitting diodes

NASA Astrophysics Data System (ADS)

May, Brelon J.; Selcu, Camelia M.; Sarwar, A. T. M. G.; Myers, Roberto C.

2018-02-01

As an alternative to light emitting diodes (LEDs) based on thin films, nanowire based LEDs are the focus of recent development efforts in solid state lighting as they offer distinct photonic advantages and enable direct integration on a variety of different substrates. However, for practical nanowire LEDs to be realized, uniform electrical injection must be achieved through large numbers of nanowire LEDs. Here, we investigate the effect of the integration of a III-Nitride polarization engineered tunnel junction (TJ) in nanowire LEDs on Si on both the overall injection efficiency and nanoscale current uniformity. By using conductive atomic force microscopy (cAFM) and current-voltage (IV) analysis, we explore the link between the nanoscale nonuniformities and the ensemble devices which consist of many diodes wired in parallel. Nanometer resolved current maps reveal that the integration of a TJ on n-Si increases the amount of current a single nanowire can pass at a given applied bias by up to an order of magnitude, with the top 10% of wires passing more than ×3.5 the current of nanowires without a TJ. This manifests at the macroscopic level as a reduction in threshold voltage by more than 3 V and an increase in differential conductance as a direct consequence of the integration of the TJ. These results show the utility of cAFM to quantitatively probe the electrical inhomogeneities in as-grown nanowire ensembles without introducing uncertainty due to additional device processing steps, opening the door to more rapid development of nanowire ensemble based photonics.

Monolithic quasi-solid-state dye-sensitized solar cells based on graphene-modified mesoscopic carbon-counter electrodes

NASA Astrophysics Data System (ADS)

Rong, Yaoguang; Han, Hongwei

2013-01-01

A monolithic quasi-solid-state dye-sensitized solar cell (DSSC) based on graphene-modified mesoscopic carbon-counter electrode is developed. A TiO2-working electrode layer, ZrO2 spacer layer, and carbon counter electrode layer were constructed on a single conducting glass substrate by screen printing. The quasi-solid-state polymer gel electrolyte employed a polymer composite as the gelator, and effectively infiltrated the porous layers. Fabricated with normal carbon-counter electrode (NC-CE) containing graphite and carbon black, the DSSC had a power conversion efficiency (PCE) of 5.09% with the fill factor of 0.63 at 100 mW cm-2 AM1.5 illumination. When the NC-CE was modified with graphene sheets, the PCE and fill factor were enhanced to 6.27% and 0.71, respectively. This improvement indicates excellent conductivity and high electrocatalytic activity of the graphene sheets, which have been considered as a promising platinum-free electrode material for DSSCs.

Carbon dot/polyvinylpyrrolidone hybrid nanofibers with efficient solid-state photoluminescence constructed using an electrospinning technique

NASA Astrophysics Data System (ADS)

Zhai, Yue; Bai, Xue; Cui, Haining; Zhu, Jinyang; Liu, Wei; Zhang, Tianxiang; Dong, Biao; Pan, Gencai; Xu, Lin; Zhang, Shuang; Song, Hongwei

2018-01-01

Carbon dots (CDs) are the promising candidates for application in optoelectronic and biological areas due to their excellent photostability, unique photoluminescence, good biocompatibility, low toxicity and chemical inertness. However, the self-quenching of photoluminescence as they are dried into the solid state dramatically limits their further application. Therefore, realizing efficient photoluminescence and large-scale production of CDs in the solid state is an urgent challenge. Herein, solid-state hybrid nanofibers based on CDs and polyvinylpyrrolidone (PVP) are constructed through an electrospinning process. The resulting solid-state hybrid PVP/CD nanofibers present much enhanced photoluminescence performance compared to the corresponding pristine colloidal CDs due to the decrease in non-radiative recombination of electron-holes. Owing to the suppressed self-quenching of CDs, the photoluminescence quantum yield is considerably improved from 42.9% of pristine CDs to 83.5% of nanofibers under the excitation wavelength of 360 nm. This has great application potential in optical or optoelectronic devices.

Limits on the maximum attainable efficiency for solid-state lighting

NASA Astrophysics Data System (ADS)

Coltrin, Michael E.; Tsao, Jeffrey Y.; Ohno, Yoshi

2008-03-01

Artificial lighting for general illumination purposes accounts for over 8% of global primary energy consumption. However, the traditional lighting technologies in use today, i.e., incandescent, fluorescent, and high-intensity discharge lamps, are not very efficient, with less than about 25% of the input power being converted to useful light. Solid-state lighting is a rapidly evolving, emerging technology whose efficiency of conversion of electricity to visible white light is likely to approach 50% within the next years. This efficiency is significantly higher than that of traditional lighting technologies, with the potential to enable a marked reduction in the rate of world energy consumption. There is no fundamental physical reason why efficiencies well beyond 50% could not be achieved, which could enable even greater world energy savings. The maximum achievable luminous efficacy for a solid-state lighting source depends on many different physical parameters, for example the color rendering quality that is required, the architecture employed to produce the component light colors that are mixed to produce white, and the efficiency of light sources producing each color component. In this article, we discuss in some detail several approaches to solid-state lighting and the maximum luminous efficacy that could be attained, given various constraints such as those listed above.

Nanocarbon-Based Materials for Flexible All-Solid-State Supercapacitors.

PubMed

Lv, Tian; Liu, Mingxian; Zhu, Dazhang; Gan, Lihua; Chen, Tao

2018-04-01

Because of the rapid development of flexible electronics, it is important to develop high-performance flexible energy-storage devices, such as supercapacitors and metal-ion batteries. Compared with metal-ion batteries, supercapacitors exhibit higher power density, longer cycling life, and excellent safety, and they can be easily fabricated into all-solid-state devices by using polymer gel electrolytes. All-solid-state supercapacitors (ASSSCs) have the advantages of being lightweight and flexible, thus showing great potential to be used as power sources for flexible portable electronics. Because of their high specific surface area and excellent electrical and mechanical properties, nanocarbon materials (such as carbon nanotubes, graphene, carbon nanofibers, and so on) have been widely used as efficient electrode materials for flexible ASSSCs, and great achievements have been obtained. Here, the recent advances in flexible ASSSCs are summarized, from design strategies to fabrication techniques for nanocarbon electrodes and devices. Current challenges and future perspectives are also discussed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Application of sunflower stalk-carbon nitride nanosheets as a green sorbent in the solid-phase extraction of polycyclic aromatic hydrocarbons followed by high-performance liquid chromatography.

PubMed

Marzi Khosrowshahi, Elnaz; Razmi, Habib

2018-02-08

A green biocomposite of sunflower stalks and graphitic carbon nitride nanosheets has been applied as a solid-phase extraction adsorbent for sample preparation of five polycyclic aromatic hydrocarbons in different solutions using high-performance liquid chromatography with ultraviolet detection. Before the modification, sunflower stalks exhibited relatively low adsorption to the polycyclic aromatic hydrocarbons extraction. The modified sunflower stalks showed increased adsorption to the analytes extraction due to the increase in surface and existence of a π-π interaction between the analytes and graphitic carbon nitride nanosheets on the surface. Under the optimal conditions, the limits of detection and quantification for five polycyclic aromatic hydrocarbons compounds could reach 0.4-32 and 1.2-95 ng/L, respectively. The method accuracy was evaluated using recovery measurements in spiked real samples and good recoveries from 71 to 115% with relative standard deviations of <10% have been achieved. The developed method was successfully applied for polycyclic aromatic hydrocarbons determination in various samples-well water, tap water, soil, vegetable, and barbequed meat (kebab)-with analytes contents ranging from 0.065 to 13.3 μg/L. The prepared green composite as a new sorbent has some advantages including ease of preparation, low cost, and good reusability. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Andreev molecules in semiconductor nanowire double quantum dots.

PubMed

Su, Zhaoen; Tacla, Alexandre B; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Daley, Andrew J; Pekker, David; Frolov, Sergey M

2017-09-19

Chains of quantum dots coupled to superconductors are promising for the realization of the Kitaev model of a topological superconductor. While individual superconducting quantum dots have been explored, control of longer chains requires understanding of interdot coupling. Here, double quantum dots are defined by gate voltages in indium antimonide nanowires. High transparency superconducting niobium titanium nitride contacts are made to each of the dots in order to induce superconductivity, as well as probe electron transport. Andreev bound states induced on each of dots hybridize to define Andreev molecular states. The evolution of these states is studied as a function of charge parity on the dots, and in magnetic field. The experiments are found in agreement with a numerical model.Quantum dots in a nanowire are one possible approach to creating a solid-state quantum simulator. Here, the authors demonstrate the coupling of electronic states in a double quantum dot to form Andreev molecule states; a potential building block for longer chains suitable for quantum simulation.

Modeling, Growth and Characterization of III-V and Dilute Nitride Antimonide Materials and Solar Cells

NASA Astrophysics Data System (ADS)

Maros, Aymeric

III-V multijunction solar cells have demonstrated record efficiencies with the best device currently at 46 % under concentration. Dilute nitride materials such as GaInNAsSb have been identified as a prime choice for the development of high efficiency, monolithic and lattice-matched multijunction solar cells as they can be lattice-matched to both GaAs and Ge substrates. These types of cells have demonstrated efficiencies of 44% for terrestrial concentrators, and with their upright configuration, they are a direct drop-in product for today's space and concentrator solar panels. The work presented in this dissertation has focused on the development of relatively novel dilute nitride antimonide (GaNAsSb) materials and solar cells using plasma-assisted molecular beam epitaxy, along with the modeling and characterization of single- and multijunction solar cells. Nitrogen-free ternary compounds such as GaInAs and GaAsSb were investigated first in order to understand their structural and optical properties prior to introducing nitrogen. The formation of extended defects and the resulting strain relaxation in these lattice-mismatched materials is investigated through extensive structural characterization. Temperature- and power-dependent photoluminescence revealed an inhomogeneous distribution of Sb in GaAsSb films, leading to carrier localization effects at low temperatures. Tuning of the growth parameters was shown to suppress these Sb-induced localized states. The introduction of nitrogen was then considered and the growth process was optimized to obtain high quality GaNAsSb films lattice-matched to GaAs. Near 1-eV single-junction GaNAsSb solar cells were produced. The best devices used a p-n heterojunction configuration and demonstrated a current density of 20.8 mA/cm2, a fill factor of 64 % and an open-circuit voltage of 0.39 V, corresponding to a bandgap-voltage offset of 0.57 V, comparable with the state-of-the-art for this type of solar cells. Post-growth annealing was found to be essential to improve Voc but was also found to degrade the material quality of the top layers. Alternatives are discussed to improve this process. Unintentional high background doping was identified as the main factor limiting the device performance. The use of Bi-surfactant mediated growth is proposed for the first time for this material system to reduce this background doping and preliminary results are presented.

High peak power solid-state laser for micromachining of hard materials

NASA Astrophysics Data System (ADS)

Herbst, Ludolf; Quitter, John P.; Ray, Gregory M.; Kuntze, Thomas; Wiessner, Alexander O.; Govorkov, Sergei V.; Heglin, Mike

2003-06-01

Laser micromachining has become a key enabling technology in the ever-continuing trend of miniaturization in microelectronics, micro-optics, and micromechanics. New applications have become commercially viable due to the emergence of innovative laser sources, such as diode pumped solid-state lasers (DPSSL), and the progress in processing technology. Examples of industrial applications are laser-drilled micro-injection nozzles for highly efficient automobile engines, or manufacturing of complex spinnerets for production of synthetic fibers. The unique advantages of laser-based techniques stem from their ability to produce high aspect ratio holes, while yielding low heat affected zones with exceptional surface quality, roundness and taper tolerances. Additionally, the ability to drill blind holes and slots in very hard materials such as diamond, silicon, sapphire, ceramics and steel is of great interest for many applications in microelectronics, semiconductor and automotive industry. This kind of high quality, high aspect ratio micromachining requires high peak power and short pulse durations.

Efficient nitrogen incorporation in GaAs using novel metal organic As-N precursor di-tertiary-butyl-arsano-amine (DTBAA)

NASA Astrophysics Data System (ADS)

Sterzer, E.; Beyer, A.; Duschek, L.; Nattermann, L.; Ringler, B.; Leube, B.; Stegmüller, A.; Tonner, R.; von Hänisch, C.; Stolz, W.; Volz, K.

2016-04-01

III/V semiconductors containing small amounts of nitrogen (N; dilute nitrides) are discussed in the context of different solar cell and laser applications. The efficiency of these devices is negatively affected by carbon (C) incorporation, which comes either from the direct C-N bond in the N precursor unsymmetrical 1,1-dimethylhydrazine (UDMHy) used conventionally or from the alkyl groups of the conventional precursors for gallium (Ga), indium and arsenic (As) containing carbon. This C is incorporated together with the N due to the strength of the C-N bond. A further important issue in dilute nitride growth is the very low N incorporation efficiency in the crystal from UDMHy, which can be as little as 1% of the N supplied in the gas phase. Therefore, new metal organic chemicals have to be synthesized and their growth characteristics and suitability for dilute nitride growth have to be explored. This work presents the chemical di-tertiary-butyl-arsano-amine (DTBAA), which was synthesized, purified and tested as an N precursor for metal organic vapor phase epitaxy (MOVPE). Computational investigations show β-hydrogen and isobutane elimination to be the main reaction channel in the gas phase with high reaction barriers and absence of small fragments containing C as products. The loss of N via N2, as in UDMHy, can be excluded for unimolecular reactions of DTBAA. The Ga(NAs)/GaAs heterostructures were grown by MOVPE as initial test material and a systematic N incorporation study is presented in this paper. It is shown that high quality Ga(NAs) can be grown using DTBAA. The N incorporation was confirmed by high resolution X-ray diffraction and photoluminescence studies. All samples grown exhibit as grown room temperature photoluminescence and smooth surface morphologies. Furthermore, DTBAA shows extremely high N incorporation efficiency, which makes this molecule a very promising candidate for further research into dilute nitride material growth.

A complete carbon counter electrode for high performance quasi solid state dye sensitized solar cell

NASA Astrophysics Data System (ADS)

Arbab, Alvira Ayoub; Peerzada, Mazhar Hussain; Sahito, Iftikhar Ali; Jeong, Sung Hoon

2017-03-01

The proposed research describes the design and fabrication of a quasi-solid state dye sensitized solar cells (Q-DSSCs) with a complete carbon based counter electrode (CC-CE) and gel infused membrane electrolyte. For CE, the platinized fluorinated tin oxide glass (Pt/FTO) was replaced by the soft cationic functioned multiwall carbon nanotubes (SCF-MWCNT) catalytic layer coated on woven carbon fiber fabric (CFF) prepared on handloom by interlacing of carbon filament tapes. SCF-MWCNT were synthesized by functionalization of cationised lipase from Candida Ragusa. Cationised enzyme solution was prepared at pH ∼3 by using acetic acid. The cationic enzyme functionalization of MWCNT causes the minimum damage to the tubular morphology and assist in fast anchoring of negative iodide ions present in membrane electrolyte. The high electrocatalytic activity and low charge transfer resistance (RCT = 2.12 Ω) of our proposed system of CC-CE shows that the woven CFF coated with cationised lipase treated carbon nanotubes enriched with positive surface ions. The Q-DSSCs fabricated with CC-CE and 5 wt% PEO gel infused PVDF-HFP membrane electrolyte exhibit power conversion efficiency of 8.90% under masking. Our suggested low cost and highly efficient system of CC-CE helps the proposed quasi-solid state DSSCs structure to stand out as sustainable next generation solar cells.

Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip.

PubMed

Kim, Je-Hyung; Aghaeimeibodi, Shahriar; Richardson, Christopher J K; Leavitt, Richard P; Englund, Dirk; Waks, Edo

2017-12-13

Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.

High capacity and stable all-solid-state Li ion battery using SnO2-embedded nanoporous carbon.

PubMed

Notohara, Hiroo; Urita, Koki; Yamamura, Hideyuki; Moriguchi, Isamu

2018-06-08

Extensive research efforts are devoted to development of high performance all-solid-state lithium ion batteries owing to their potential in not only improving safety but also achieving high stability and high capacity. However, conventional approaches based on a fabrication of highly dense electrode and solid electrolyte layers and their close contact interface is not always applicable to high capacity alloy- and/or conversion-based active materials such as SnO 2 accompanied with large volume change in charging-discharging. The present work demonstrates that SnO 2 -embedded nanoporous carbons without solid electrolyte inside the nanopores are a promising candidate for high capacity and stable anode material of all-solid-state battery, in which the volume change reactions are restricted in the nanopores to keep the constant electrode volume. A prototype all-solid-state full cell consisting of the SnO 2 -based anode and a LiNi 1/3 Co 1 / 3 Mn 1/3 O 2 -based cathode shows a good performance of 2040 Wh/kg at 268.6 W/kg based on the anode material weight.

Radiative and Auger recombination of degenerate carriers in InN

NASA Astrophysics Data System (ADS)

McAllister, Andrew; Bayerl, Dylan; Kioupakis, Emmanouil

Group-III nitrides find applications in many fields - energy conversion, sensors, and solid-state lighting. The band gaps of InN, GaN and AlN alloys span the infrared to ultraviolet spectral range. However, nitride optoelectronic devices suffer from a drop in efficiency as carrier density increases. A major component of this decrease is Auger recombination, but its influence is not fully understood, particularly for degenerate carriers. For nondegenerate carriers the radiative rate scales as the carrier density squared, while the Auger rate scales as the density cubed. However, it is unclear how these power laws decrease as carriers become degenerate. Using first-principles calculations we studied the dependence of the radiative and Auger recombination rates on carrier density in InN. We found a more complex dependence on the Auger rate than expected. The power law of the Auger rate changes at different densities depending on the type of Auger process involved and the type of carriers that have become degenerate. In contrast, the power law of the radiative rate changes when either carrier type becomes degenerate. This creates problems in designing devices, as Auger remains a major contributor to carrier recombination at densities for which radiative recombination is suppressed by phase-space filling. This work was supported by NSF (GRFP DGE 1256260 and CAREER DMR-1254314). Computational resources provided by the DOE NERSC facility (DE-AC02-05CH11231).

Monolithic quasi-solid-state dye-sensitized solar cells based on graphene modified mesoscopic carbon counter electrodes

NASA Astrophysics Data System (ADS)

Rong, Yaoguang; Li, Xiong; Liu, Guanghui; Wang, Heng; Ku, Zhiliang; Xu, Mi; Liu, Linfeng; Hu, Min; Yang, Ying; Han, Hongwei

2013-03-01

We have developed a monolithic quasi-solid-state dye-sensitized solar cell (DSSC) based on graphene modified mesoscopic carbon counter electrode (GC-CE), which offers a promising prospect for commercial applications. Based on the design of a triple layer structure, the TiO2 working electrode layer, ZrO2 spacer layer and carbon counter electrode (CE) layer are constructed on a single conducting glass substrate by screen-printing. The quasi-solid-state polymer gel electrolyte employs a polymer composite as the gelator and could effectively infiltrate into the porous layers. Fabricated with normal carbon counter electrode (NC-CE) containing graphite and carbon black, the device shows a power conversion efficiency (PCE) of 5.09% with the fill factor (FF) of 0.63 at 100 mW cm-2 AM1.5 illumination. When the NC-CE is modified with graphene sheets, the PCE and FF could be enhanced to 6.27% and 0.71, respectively. This improvement indicates excellent conductivity and high electrocatalytic activity of the graphene sheets, which have been considered as a promising platinum-free electrode material for DSSCs.

Use of spent mushroom substrate for production of Bacillus thuringiensis by solid-state fermentation.

PubMed

Wu, Songqing; Lan, Yanjiao; Huang, Dongmei; Peng, Yan; Huang, Zhipeng; Xu, Lei; Gelbic, Ivan; Carballar-Lejarazu, Rebeca; Guan, Xiong; Zhang, Lingling; Zou, Shuangquan

2014-02-01

The aim of this study was to explore a cost-effective method for the mass production of Bacillus thuringiensis (Bt) by solid-state fermentation. As a locally available agroindustrial byproduct, spent mushroom substrate (SMS) was used as raw material for Bt cultivation, and four combinations of SMS-based media were designed. Fermentation conditions were optimized on the best medium and the optimal conditions were determined as follows: temperature 32 degrees C, initial pH value 6, moisture content 50%, the ratio of sieved material to initial material 1:3, and inoculum volume 0.5 ml. Large scale production of B. thuringiensis subsp. israelensis (Bti) LLP29 was conducted on the optimal medium at optimal conditions. High toxicity (1,487 international toxic units/milligram) and long larvicidal persistence of the product were observed in the study, which illustrated that SMS-based solid-state fermentation medium was efficient and economical for large scale industrial production of Bt-based biopesticides. The cost of production of 1 kg of Bt was approximately US$0.075.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreno, Gilbert; Bennion, Kevin

This project will develop thermal management strategies to enable efficient and high-temperature wide-bandgap (WBG)-based power electronic systems (e.g., emerging inverter and DC-DC converter designs). The use of WBG-based devices in automotive power electronics will improve efficiency and increase driving range in electric-drive vehicles; however, the implementation of this technology is limited, in part, due to thermal issues. This project will develop system-level thermal models to determine the thermal limitations of current automotive power modules under elevated device temperature conditions. Additionally, novel cooling concepts and material selection will be evaluated to enable high-temperature silicon and WBG devices in power electronics components.more » WBG devices (silicon carbide [SiC], gallium nitride [GaN]) promise to increase efficiency, but will be driven as hard as possible. This creates challenges for thermal management and reliability.« less

Molten tin reprocessing of spent nuclear fuel elements. [Patent application; continuous process

DOEpatents

Heckman, R.A.

1980-12-19

A method and apparatus for reprocessing spent nuclear fuel is described. Within a containment vessel, a solid plug of tin and nitride precipitates supports a circulating bath of liquid tin therein. Spent nuclear fuel is immersed in the liquid tin under an atmosphere of nitrogen, resulting in the formation of nitride precipitates. The layer of liquid tin and nitride precipitates which interfaces the plug is solidified and integrated with the plug. Part of the plug is melted, removing nitride precipitates from the containment vessel, while a portion of the plug remains solidified to support te liquid tin and nitride precipitates remaining in the containment vessel. The process is practiced numerous times until substantially all of the precipitated nitrides are removed from the containment vessel.

A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes

PubMed Central

Jin, Jie; Mi, Chenziyi; Hao, Zhibiao; Luo, Yi; Sun, Changzheng; Han, Yanjun; Xiong, Bing; Wang, Jian; Li, Hongtao

2017-01-01

Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current density perplexes the development of high-power solid-state lighting. Although the relevant study has lasted for about 10 years, its mechanism is still not thoroughly clear, and consequently its solution is also unsatisfactory up to now. Some emerging applications, e.g., high-speed visible light communication, requiring LED working under extremely high current density, makes the influence of efficiency droop become more serious. This paper reviews the experimental measurements on LED to explain the origins of droop in recent years, especially some new results reported after 2013. Particularly, the carrier lifetime of LED is analyzed intensively and its effects on LED droop behaviors are uncovered. Finally, possible solutions to overcome LED droop are discussed. PMID:29072611

Hyperbranched quasi-1D nanostructures for solid-state dye-sensitized solar cells.

PubMed

Passoni, Luca; Ghods, Farbod; Docampo, Pablo; Abrusci, Agnese; Martí-Rujas, Javier; Ghidelli, Matteo; Divitini, Giorgio; Ducati, Caterina; Binda, Maddalena; Guarnera, Simone; Li Bassi, Andrea; Casari, Carlo Spartaco; Snaith, Henry J; Petrozza, Annamaria; Di Fonzo, Fabio

2013-11-26

In this work we demonstrate hyperbranched nanostructures, grown by pulsed laser deposition, composed of one-dimensional anatase single crystals assembled in arrays of high aspect ratio hierarchical mesostructures. The proposed growth mechanism relies on a two-step process: self-assembly from the gas phase of amorphous TiO2 clusters in a forest of tree-shaped hierarchical mesostructures with high aspect ratio; oriented crystallization of the branches upon thermal treatment. Structural and morphological characteristics can be optimized to achieve both high specific surface area for optimal dye uptake and broadband light scattering thanks to the microscopic feature size. Solid-state dye sensitized solar cells fabricated with arrays of hyperbranched TiO2 nanostructures on FTO-glass sensitized with D102 dye showed a significant 66% increase in efficiency with respect to a reference mesoporous photoanode and reached a maximum efficiency of 3.96% (among the highest reported for this system). This result was achieved mainly thanks to an increase in photogenerated current directly resulting from improved light harvesting efficiency of the hierarchical photoanode. The proposed photoanode overcomes typical limitations of 1D TiO2 nanostructures applied to ss-DSC and emerges as a promising foundation for next-generation high-efficiency solid-state devices comprosed of dyes, polymers, or quantum dots as sensitizers.

Graphene-on-silicon nitride waveguide photodetector with interdigital contacts

NASA Astrophysics Data System (ADS)

Gao, Yun; Tao, Li; Tsang, Hon Ki; Shu, Chester

2018-05-01

Graphene photodetectors have attracted research attention because of their potential high speed and broad spectral bandwidth. However, their low responsivity and quantum efficiency compared with germanium or III-V material based photodetectors limit their practical use. Here, we demonstrate a chemical vapor deposited graphene photodetector integrated on a silicon nitride waveguide. Interdigital metal contacts are used to reduce the channel spacing down to ˜200 nm. At zero bias, a metal-graphene junction is used for photodetection, which is beneficial for an electro-optic bandwidth of ˜33 GHz in the 1550 nm wavelength band. At a bias of 1 V, a photoconductive responsivity of ˜2.36 A/W at 1550 nm was observed. The high speed and high responsivity make the device promising for photodetection in the telecommunication C-band. A diffusion model is applied to study the carrier transition process in the graphene channel. By adopting this model, the high performance of the device is explained. The main limitation in the responsivity of graphene photodetectors is also analyzed.

Dynamic Multiaxial Response of a Hot-Pressed Aluminum Nitride

DTIC Science & Technology

2012-01-05

Hutchinson, Adv. Appl . Mech. 29 (1992). [34] H. Ming-Yuan, J.W. Hutchinson, Int. J. Solids Struct. 25 (1989) 1053. [35] J. Salem , L. Ghosn, Int. J...Dynamic Multiaxial Response of a Hot- Pressed Aluminum Nitride by Guangli Hu, C. Q. Chen, K. T. Ramesh, and J. W. McCauley ARL-RP-0487...Laboratory Aberdeen Proving Ground, MD 21005-5066 ARL-RP-0487 June 2014 Dynamic Multiaxial Response of a Hot- Pressed Aluminum Nitride

Rapid Thermal Annealing of Cathode-Garnet Interface toward High-Temperature Solid State Batteries.

PubMed

Liu, Boyang; Fu, Kun; Gong, Yunhui; Yang, Chunpeng; Yao, Yonggang; Wang, Yanbin; Wang, Chengwei; Kuang, Yudi; Pastel, Glenn; Xie, Hua; Wachsman, Eric D; Hu, Liangbing

2017-08-09

High-temperature batteries require the battery components to be thermally stable and function properly at high temperatures. Conventional batteries have high-temperature safety issues such as thermal runaway, which are mainly attributed to the properties of liquid organic electrolytes such as low boiling points and high flammability. In this work, we demonstrate a truly all-solid-state high-temperature battery using a thermally stable garnet solid-state electrolyte, a lithium metal anode, and a V 2 O 5 cathode, which can operate well at 100 °C. To address the high interfacial resistance between the solid electrolyte and cathode, a rapid thermal annealing method was developed to melt the cathode and form a continuous contact. The resulting interfacial resistance of the solid electrolyte and V 2 O 5 cathode was significantly decreased from 2.5 × 10 4 to 71 Ω·cm 2 at room temperature and from 170 to 31 Ω·cm 2 at 100 °C. Additionally, the diffusion resistance in the V 2 O 5 cathode significantly decreased as well. The demonstrated high-temperature solid-state full cell has an interfacial resistance of 45 Ω·cm 2 and 97% Coulombic efficiency cycling at 100 °C. This work provides a strategy to develop high-temperature all-solid-state batteries using garnet solid electrolytes and successfully addresses the high contact resistance between the V 2 O 5 cathode and garnet solid electrolyte without compromising battery safety or performance.

Transition-Metal Nitride Core@Noble-Metal Shell Nanoparticles as Highly CO Tolerant Catalysts

DOE PAGES

Garg, Aaron; Milina, Maria; Ball, Madelyn; ...

2017-05-25

Core–shell architectures offer an effective way to tune and enhance the properties of noble-metal catalysts. Herein, we demonstrate the synthesis of Pt shell on titanium tungsten nitride core nanoparticles (Pt/TiWN) by high temperature ammonia nitridation of a parent core–shell carbide material (Pt/TiWC). X-ray photoelectron spectroscopy revealed significant core-level shifts for Pt shells supported on TiWN cores, corresponding to increased stabilization of the Pt valence d-states. The modulation of the electronic structure of the Pt shell by the nitride core translated into enhanced CO tolerance during hydrogen electrooxidation in the presence of CO. In conclusion, the ability to control shell coveragemore » and vary the heterometallic composition of the shell and nitride core opens up attractive opportunities to synthesize a broad range of new materials with tunable catalytic properties.« less

Transition-Metal Nitride Core@Noble-Metal Shell Nanoparticles as Highly CO Tolerant Catalysts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garg, Aaron; Milina, Maria; Ball, Madelyn

Core–shell architectures offer an effective way to tune and enhance the properties of noble-metal catalysts. Herein, we demonstrate the synthesis of Pt shell on titanium tungsten nitride core nanoparticles (Pt/TiWN) by high temperature ammonia nitridation of a parent core–shell carbide material (Pt/TiWC). X-ray photoelectron spectroscopy revealed significant core-level shifts for Pt shells supported on TiWN cores, corresponding to increased stabilization of the Pt valence d-states. The modulation of the electronic structure of the Pt shell by the nitride core translated into enhanced CO tolerance during hydrogen electrooxidation in the presence of CO. In conclusion, the ability to control shell coveragemore » and vary the heterometallic composition of the shell and nitride core opens up attractive opportunities to synthesize a broad range of new materials with tunable catalytic properties.« less

TOPICAL REVIEW: GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

NASA Astrophysics Data System (ADS)

Pearton, S. J.; Kang, B. S.; Kim, Suku; Ren, F.; Gila, B. P.; Abernathy, C. R.; Lin, Jenshan; Chu, S. N. G.

2004-07-01

There is renewed emphasis on development of robust solid-state sensors capable of uncooled operation in harsh environments. The sensors should be capable of detecting chemical, gas, biological or radiation releases as well as sending signals to central monitoring locations. We discuss the advances in use of GaN-based solid-state sensors for these applications. AlGaN/GaN high electron mobility transistors (HEMTs) show a strong dependence of source/drain current on the piezoelectric polarization-induced two-dimensional electron gas (2DEG). Furthermore, spontaneous and piezoelectric polarization-induced surface and interface charges can be used to develop very sensitive but robust sensors to detect gases, polar liquids and mechanical pressure. AlGaN/GaN HEMT structures have been demonstrated to exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions. Pt-gated GaN Schottky diodes and Sc2O3/AlGaN/GaN metal-oxide semiconductor diodes also show large change in forward currents upon exposure to H2. Of particular interest is detection of ethylene (C2H4), which has strong double bonds and hence is difficult to dissociate at modest temperatures. Apart from combustion gas sensing, the AlGaN/GaN heterostructure devices can be used as sensitive detectors of pressure changes. In addition, large changes in source-drain current of the AlGaN/GaN HEMT sensors can be detected upon adsorption of biological species on the semiconductor surface. Finally, the nitrides provide an ideal platform for fabrication of surface acoustic wave (SAW) devices. The GaN-based devices thus appear promising for a wide range of chemical, biological, combustion gas, polar liquid, strain and high temperature pressure-sensing applications. In addition, the sensors are compatible with high bit-rate wireless communication systems that facilitate their use in remote arrays.

Grating enhanced solid-state laser amplifiers

DOEpatents

Erlandson, Alvin C.; Britten, Jerald A.

2010-11-09

A novel method and apparatus for suppressing ASE and parasitic oscillation modes in a high average power laser is introduced. Such an invention, as disclosed herein, uses diffraction gratings to increase gain, stored energy density, and pumping efficiency of solid-state laser gain media, such as, but not limited to rods, disks and slabs. By coupling predetermined gratings to solid-state gain media, such as crystal or ceramic laser gain media, ASE and parasitic oscillation modes can be effectively suppressed.

High energy efficient solid state laser sources

NASA Technical Reports Server (NTRS)

Byer, Robert L.

1989-01-01

Recent progress in the development of highly efficient coherent optical sources was reviewed. This work has focused on nonlinear frequency conversion of the highly coherent output of the non-planar ring laser oscillators developed earlier in the program, and includes high efficiency second harmonic generation and the operation of optical parametric oscillators for wavelength diversity and tunability.

Enhanced performance of dye-sensitized solar cells with layered structure graphitic carbon nitride and reduced graphene oxide modified TiO2 photoanodes

NASA Astrophysics Data System (ADS)

Lv, Huiru; Hu, Haihua; Cui, Can; Lin, Ping; Wang, Peng; Wang, Hao; Xu, Lingbo; Pan, Jiaqi; Li, Chaorong

2017-11-01

TiO2/reduced graphene oxide (TiO2/rGO) composite has been widely exploited as the photoanode material for high efficient dye-sensitized solar cells (DSSCs). However, the power conversion efficiency (PCE) is limited due to the charge recombination between the rGO and electrolyte. In this paper, we incorporate 5.5 wt% layered structure graphitic carbon nitride (g-C3N4) and 0.25 wt% rGO into TiO2 nanoparticle (NP) film to form a triple-component TiO2/rGO/g-C3N4 (TGC) photoanode for DSSCs. The TGC photoanode significantly increased the dye absorption and thus to improve the light harvesting efficiency. Furthermore, the electrochemical impedance spectroscopy (EIS) analysis of the DSSCs based on TGC photoanode demonstrates that the incorporation of the rGO and g-C3N4 into TiO2 effectively accelerates the electron transfer and reduces the charge recombination. As a result, the DSSCs based on TGC film show PCE of 5.83%, enhanced by 50.1% compared with that of pure TiO2 photoanodes. This result strongly suggests a facile strategy to improve the photovoltaic performance of DSSCs.

Aluminum nitride integrated photonics platform for the ultraviolet to visible spectrum.

PubMed

Lu, Tsung-Ju; Fanto, Michael; Choi, Hyeongrak; Thomas, Paul; Steidle, Jeffrey; Mouradian, Sara; Kong, Wei; Zhu, Di; Moon, Hyowon; Berggren, Karl; Kim, Jeehwan; Soltani, Mohammad; Preble, Stefan; Englund, Dirk

2018-04-30

We demonstrate a wide-bandgap semiconductor photonics platform based on nanocrystalline aluminum nitride (AlN) on sapphire. This photonics platform guides light at low loss from the ultraviolet (UV) to the visible spectrum. We measure ring resonators with intrinsic quality factor (Q) exceeding 170,000 at 638 nm and Q >20,000 down to 369.5 nm, which shows a promising path for low-loss integrated photonics in UV and visible spectrum. This platform opens up new possibilities in integrated quantum optics with trapped ions or atom-like color centers in solids, as well as classical applications including nonlinear optics and on-chip UV-spectroscopy.

A Ka-Band Wide-Bandgap Solid-State Power Amplifier: Architecture Performance Estimates

NASA Technical Reports Server (NTRS)

Epp, L.; Khan, P.; Silva, A.

2005-01-01

Motivated by recent advances in wide-bandgap (WBG) gallium nitride (GaN) semiconductor technology, there is considerable interest in developing efficient solidstate power amplifiers (SSPAs) as an alternative to the traveling-wave tube amplifier (TWTA) for space applications. This article documents the results of a study to investigate power-combining technology and SSPA architectures that can enable a 120-W, 40 percent power-added efficiency (PAE) SSPA. Results of the study indicate that architectures based on at least three power combiner designs are likely to enable the target SSPA. The proposed architectures can power combine 16 to 32 individual monolithic microwave integrated circuits (MMICs) with >80 percent combining efficiency. This corresponds to MMIC requirements of 5- to 10-W output power and >48 percent PAE. For the three proposed architectures [1], detailed analysis and design of the power combiner are presented. The first architecture studied is based on a 16-way septum combiner that offers low loss and high isolation over the design band of 31 to 36 GHz. Analysis of a 2-way prototype septum combiner had an input match >25 dB, output match >30 dB, insertion loss <0.02 dB, and isolation >30 dB over the design band. A 16-way design, based on cascading this combiner in a binary fashion, is documented. The second architecture is based on a 24-way waveguide radial combiner. A prototype 24-way radial base was analyzed to have an input match >30 dB (under equal excitation of all input ports). The match of the mode transducer that forms the output of a radial combiner was found to be >27 dB. The functional bandwidth of the radial base and mode transducer, which together will form a radial combiner/divider, exceeded the design band. The third architecture employs a 32-way, parallel-plate radial combiner. Simulation results indicated an input match >24 dB, output match >22 dB, insertion loss <0.23 dB, and adjacent port isolation >20 dB over the design band. All three architectures utilize a low-loss MMIC amplifier module based on commercial MMIC packaging and a custom microstrip-to-rectangular-waveguide transition. The insertion loss of the module is expected to be 0.45 dB over the design band.

Highly Efficient Carbon Dots with Reversibly Switchable Green-Red Emissions for Trichromatic White Light-Emitting Diodes.

PubMed

Yuan, Biao; Guan, Shanyue; Sun, Xingming; Li, Xiaoming; Zeng, Haibo; Xie, Zheng; Chen, Ping; Zhou, Shuyun

2018-05-09

Carbon dots (CDs) have potentials to be utilized in optoelectronic devices, bioimaging, and photocatalysis. The majority of the current CDs with high quantum yield to date were limited in the blue light emission region. Herein, on the basis of surface electron-state engineering, we report a kind of CDs with reversible switching ability between green and red photoluminescence with a quantum yield (QY) of both up to 80%. Highly efficient green and red solid-state luminescence is realized by doping CDs into a highly transparent matrix of methyltriethoxysilane and 3-triethoxysilylpropylamine to form CDs/gel glasses composites with QYs of 80 and 78%. The CDs/gel glasses show better transmittance in visible light bands and excellent thermal stability. A blue-pumped CDs/gel glasses phosphor-based trichromatic white light-emitting diode (WLED) is realized, whose color rendering index is 92.9. The WLED gets the highest luminous efficiency of 71.75 lm W -1 in CDs-based trichromatic WLEDs. This work opens a door for developing highly efficient green- and red-emissive switching CDs which were used as phosphors for WLEDs and have the tendency for applications in other fields, such as sensing, bioimaging, and photocatalysis.

Flat-plate solar array project. Volume 4: High-efficiency solar cells

NASA Technical Reports Server (NTRS)

Leipold, M.; Cheng, L.; Daud, T.; Mokashi, A.; Burger, D.; Christensen, E. (Editor); Murry, J. (Editor); Bengelsdorf, I. (Editor)

1986-01-01

The High Efficiency Solar Cell Task was assigned the objective of understanding and developing high efficiency solar cell devices that would meet the cost and performance goals of the Flat Plate Solar Array (FSA) Project. The need for research dealing with high efficiency devices was considered important because of the role efficiency plays in reducing price per watt of generated energy. The R&D efforts conducted during the 1982 to 1986 period are summarized to provide understanding and control of energy conversion losses associated with crystalline silicon solar cells. New levels of conversion efficiency were demonstrated. Major contributions were made both to the understanding and reduction of bulk and surface losses in solar cells. For example, oxides, nitrides, and polysilicon were all shown to be potentially useful surface passivants. Improvements in measurement techniques were made and Auger coefficients and spectral absorption data were obtained for unique types of silicon sheets. New modelling software was developed including a program to optimize a device design based on input characteristics of a cell.

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy

PubMed Central

2011-01-01

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell. PMID:22040124

Solid-state transformer-based new traction drive system and control

NASA Astrophysics Data System (ADS)

Feng, Jianghua; Shang, Jing; Zhang, Zhixue; Liu, Huadong; Huang, Zihao

2017-11-01

A new type of traction drive system consisting of solid-state traction transformer (SSTT), inverter unit, auxiliary inverter, traction motor and other key components is built in order to suit the demand of developing the next-generation electric traction system which will be efficient and lightweight, with high power density. For the purpose of reducing system volume and weight and improving efficiency and grid-side power quality, an efficient SSTT optimized topology combining high-voltage cascaded rectifiers with high-power high-frequency LLC resonant converter is proposed. On this basis, an integrated control strategy built upon synchronous rotating reference frame is presented to achieve unified control over fundamental active, reactive and harmonic components. The carrier-interleaving phase shift modulation strategy is proposed to improve the harmonic performance of cascaded rectifiers. In view of the secondary pulsating existing in a single-phase system, the mathematical model of secondary power transfer is built, and the mechanism of pulsating voltage resulting in beat frequency of LLC resonant converter is revealed, so as to design optimum matching of system parameters. Simulation and experimental results have verified that the traction system and control scheme mentioned in this paper are reasonable and superior and that they meet the future application requirements for rail transit.

Preliminary Analysis of a Fully Solid State Magnetocaloric Refrigeration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abdelaziz, Omar

Magnetocaloric refrigeration is an alternative refrigeration technology with significant potential energy savings compared to conventional vapor compression refrigeration technology. Most of the reported active magnetic regenerator (AMR) systems that operate based on the magnetocaloric effect use heat transfer fluid to exchange heat, which results in complicated mechanical subsystems and components such as rotating valves and hydraulic pumps. In this paper, we propose an alternative mechanism for heat transfer between the AMR and the heat source/sink. High-conductivity moving rods/sheets (e.g. copper, brass, iron, graphite, aluminum or composite structures from these) are utilized instead of heat transfer fluid significantly enhancing the heatmore » transfer rate hence cooling/heating capacity. A one-dimensional model is developed to study the solid state AMR. In this model, the heat exchange between the solid-solid interfaces is modeled via a contact conductance, which depends on the interface apparent pressure, material hardness, thermal conductivity, surface roughness, surface slope between the interfaces, and material filled in the gap between the interfaces. Due to the tremendous impact of the heat exchange on the AMR cycle performance, a sensitivity analysis is conducted employing a response surface method, in which the apparent pressure, effective surface roughness and grease thermal conductivity are the uncertainty factors. COP and refrigeration capacity are presented as the response in the sensitivity analysis to reveal the important factors influencing the fully solid state AMR and optimize the solid state AMR efficiency. The performances of fully solid state AMR and traditional AMR are also compared and discussed in present work. The results of this study will provide general guidelines for designing high performance solid state AMR systems.« less

Superior Blends Solid Polymer Electrolyte with Integrated Hierarchical Architectures for All-Solid-State Lithium-Ion Batteries.

PubMed

Zhang, Dechao; Zhang, Long; Yang, Kun; Wang, Hongqiang; Yu, Chuang; Xu, Di; Xu, Bo; Wang, Li-Min

2017-10-25

Exploration of advanced solid electrolytes with good interfacial stability toward electrodes is a highly relevant research topic for all-solid-state batteries. Here, we report PCL/SN blends integrating with PAN-skeleton as solid polymer electrolyte prepared by a facile method. This polymer electrolyte with hierarchical architectures exhibits high ionic conductivity, large electrochemical windows, high degree flexibility, good flame-retardance ability, and thermal stability (workable at 80 °C). Additionally, it demonstrates superior compatibility and electrochemical stability toward metallic Li as well as LiFePO 4 cathode. The electrolyte/electrode interfaces are very stable even subjected to 4.5 V at charging state for long time. The LiFePO 4 /Li all-solid-state cells based on this electrolyte deliver high capacity, outstanding cycling stability, and superior rate capability better than those based on liquid electrolyte. This solid polymer electrolyte is eligible for next generation high energy density all-solid-state batteries.

Electrochemical Solution Growth of Magnetic Nitrides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Monson, Todd C.; Pearce, Charles

Magnetic nitrides, if manufactured in bulk form, would provide designers of transformers and inductors with a new class of better performing and affordable soft magnetic materials. According to experimental results from thin films and/or theoretical calculations, magnetic nitrides would have magnetic moments well in excess of current state of the art soft magnets. Furthermore, magnetic nitrides would have higher resistivities than current transformer core materials and therefore not require the use of laminates of inactive material to limit eddy current losses. However, almost all of the magnetic nitrides have been elusive except in difficult to reproduce thin films or asmore » inclusions in another material. Now, through its ability to reduce atmospheric nitrogen, the electrochemical solution growth (ESG) technique can bring highly sought after (and previously inaccessible) new magnetic nitrides into existence in bulk form. This method utilizes a molten salt as a solvent to solubilize metal cations and nitrogen ions produced electrochemically and form nitrogen compounds. Unlike other growth methods, the scalable ESG process can sustain high growth rates (~mm/hr) even under reasonable operating conditions (atmospheric pressure and 500 °C). Ultimately, this translates into a high throughput, low cost, manufacturing process. The ESG process has already been used successfully to grow high quality GaN. Below, the experimental results of an exploratory express LDRD project to access the viability of the ESG technique to grow magnetic nitrides will be presented.« less

Waveguide silicon nitride grating coupler

NASA Astrophysics Data System (ADS)

Litvik, Jan; Dolnak, Ivan; Dado, Milan

2016-12-01

Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

High speed real-time wavefront processing system for a solid-state laser system

NASA Astrophysics Data System (ADS)

Liu, Yuan; Yang, Ping; Chen, Shanqiu; Ma, Lifang; Xu, Bing

2008-03-01

A high speed real-time wavefront processing system for a solid-state laser beam cleanup system has been built. This system consists of a core2 Industrial PC (IPC) using Linux and real-time Linux (RT-Linux) operation system (OS), a PCI image grabber, a D/A card. More often than not, the phase aberrations of the output beam from solid-state lasers vary fast with intracavity thermal effects and environmental influence. To compensate the phase aberrations of solid-state lasers successfully, a high speed real-time wavefront processing system is presented. Compared to former systems, this system can improve the speed efficiently. In the new system, the acquisition of image data, the output of control voltage data and the implementation of reconstructor control algorithm are treated as real-time tasks in kernel-space, the display of wavefront information and man-machine conversation are treated as non real-time tasks in user-space. The parallel processing of real-time tasks in Symmetric Multi Processors (SMP) mode is the main strategy of improving the speed. In this paper, the performance and efficiency of this wavefront processing system are analyzed. The opened-loop experimental results show that the sampling frequency of this system is up to 3300Hz, and this system can well deal with phase aberrations from solid-state lasers.

GaN-based light-emitting diodes on various substrates: a critical review.

PubMed

Li, Guoqiang; Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Wang, Haiyan; Lin, Zhiting; Zhou, Shizhong

2016-05-01

GaN and related III-nitrides have attracted considerable attention as promising materials for application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present, sapphire is still the most popular commercial substrate for epitaxial growth of GaN-based LEDs. However, due to its relatively large lattice mismatch with GaN and low thermal conductivity, sapphire is not the most ideal substrate for GaN-based LEDs. Therefore, in order to obtain high-performance and high-power LEDs with relatively low cost, unconventional substrates, which are of low lattice mismatch with GaN, high thermal conductivity and low cost, have been tried as substitutes for sapphire. As a matter of fact, it is not easy to obtain high-quality III-nitride films on those substrates for various reasons. However, by developing a variety of techniques, distincts progress has been made during the past decade, with high-performance LEDs being successfully achieved on these unconventional substrates. This review focuses on state-of-the-art high-performance GaN-based LED materials and devices on unconventional substrates. The issues involved in the growth of GaN-based LED structures on each type of unconventional substrate are outlined, and the fundamental physics behind these issues is detailed. The corresponding solutions for III-nitride growth, defect control, and chip processing for each type of unconventional substrate are discussed in depth, together with a brief introduction to some newly developed techniques in order to realize LED structures on unconventional substrates. This is very useful for understanding the progress in this field of physics. In this review, we also speculate on the prospects for LEDs on unconventional substrates.

Efficient Destruction of Pollutants in Water by a Dual-Reaction-Center Fenton-like Process over Carbon Nitride Compounds-Complexed Cu(II)-CuAlO2.

PubMed

Lyu, Lai; Yan, Dengbiao; Yu, Guangfei; Cao, Wenrui; Hu, Chun

2018-04-03

Carbon nitride compounds (CN) complexed with the in-situ-produced Cu(II) on the surface of CuAlO 2 substrate (CN-Cu(II)-CuAlO 2 ) is prepared via a surface growth process for the first time and exhibits exceptionally high activity and efficiency for the degradation of the refractory pollutants in water through a Fenton-like process in a wide pH range. The reaction rate for bisphenol A removal is ∼25 times higher than that of the CuAlO 2 . According to the characterization, Cu(II) generation on the surface of CuAlO 2 during the surface growth process results in the marked decrease of the surface oxygen vacancies and the formation of the C-O-Cu bridges between CN and Cu(II)-CuAlO 2 in the catalyst. The electron paramagnetic resonance (EPR) analysis and density functional theory (DFT) calculations demonstrate that the dual reaction centers are produced around the Cu and C sites due to the cation-π interactions through the C-O-Cu bridges in CN-Cu(II)-CuAlO 2 . During the Fenton-like reactions, the electron-rich center around Cu is responsible for the efficient reduction of H 2 O 2 to • OH, and the electron-poor center around C captures electrons from H 2 O 2 or pollutants and diverts them to the electron-rich area via the C-O-Cu bridge. Thus, the catalyst exhibits excellent catalytic performance for the refractory pollutant degradation. This study can deepen our understanding on the enhanced Fenton reactivity for water purification through functionalizing with organic solid-phase ligands on the catalyst surface.

Alkaline Capacitors Based on Nitride Nanoparticles

NASA Technical Reports Server (NTRS)

Aldissi, Matt

2003-01-01

High-energy-density alkaline electrochemical capacitors based on electrodes made of transition-metal nitride nanoparticles are undergoing development. Transition- metal nitrides (in particular, Fe3N and TiN) offer a desirable combination of high electrical conductivity and electrochemical stability in aqueous alkaline electrolytes like KOH. The high energy densities of these capacitors are attributable mainly to their high capacitance densities, which, in turn, are attributable mainly to the large specific surface areas of the electrode nanoparticles. Capacitors of this type could be useful as energy-storage components in such diverse equipment as digital communication systems, implanted medical devices, computers, portable consumer electronic devices, and electric vehicles.

Rare earth doped III-nitride semiconductors for spintronic and optoelectronic applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Palai, Ratnakar

2016-10-01

Since last four decades the information and communication technologies are relying on the semiconductor materials. Currently a great deal of attention is being focused on adding spin degree-of-freedom into semiconductor to create a new area of solid-state electronics, called spintronics. In spintronics not only the current but also its spin state is controlled. Such materials need to be good semiconductors for easy integration in typical integrated circuits with high sensitivity to the spin orientation, especially room temperature ferromagnetism being an important desirable property. GaN is considered to be the most important semiconductor after silicon. It is widely used for the production of green, blue, UV, and white LEDs in full color displays, traffic lights, automotive lightings, and general room lighting using white LEDs. GaN-based systems also show promise for microwave and high power electronics intended for radar, satellite, wireless base stations and spintronic applications. Rare earth (Yb, Eu, Er, and Tm) doped GaN shows many interesting optoelectronic and magnetoptic properties e. g. sharp emission from UV through visible to IR, radiation hardness, and ferromagnetism. The talk will be focused on fabrication, optoelectronic (photoluminescence, cathodeluminescence, magnetic, and x-ray photoelectron spectroscopy) properties of some rare earth doped GaN and InGaN semiconductor nanostructures grown by plasma assisted molecular beam epitaxy (MBE) and future applications.

Synthesis of Large and Few Atomic Layers of Hexagonal Boron Nitride on Melted Copper

PubMed Central

Khan, Majharul Haque; Huang, Zhenguo; Xiao, Feng; Casillas, Gilberto; Chen, Zhixin; Molino, Paul J.; Liu, Hua Kun

2015-01-01

Hexagonal boron nitride nanosheets (h-BNNS) have been proposed as an ideal substrate for graphene-based electronic devices, but the synthesis of large and homogeneous h-BNNS is still challenging. In this contribution, we report a facile synthesis of few-layer h-BNNS on melted copper via an atmospheric pressure chemical vapor deposition process. Comparative studies confirm the advantage of using melted copper over solid copper as a catalyst substrate. The former leads to the formation of single crystalline h-BNNS that is several microns in size and mostly in mono- and bi-layer forms, in contrast to the polycrystalline and mixed multiple layers (1–10) yielded by the latter. This difference is likely to be due to the significantly reduced and uniformly distributed nucleation sites on the smooth melted surface, in contrast to the large amounts of unevenly distributed nucleation sites that are associated with grain boundaries and other defects on the solid surface. This synthesis is expected to contribute to the development of large-scale manufacturing of h-BNNS/graphene-based electronics. PMID:25582557

Synthesis of large and few atomic layers of hexagonal boron nitride on melted copper.

PubMed

Khan, Majharul Haque; Huang, Zhenguo; Xiao, Feng; Casillas, Gilberto; Chen, Zhixin; Molino, Paul J; Liu, Hua Kun

2015-01-13

Hexagonal boron nitride nanosheets (h-BNNS) have been proposed as an ideal substrate for graphene-based electronic devices, but the synthesis of large and homogeneous h-BNNS is still challenging. In this contribution, we report a facile synthesis of few-layer h-BNNS on melted copper via an atmospheric pressure chemical vapor deposition process. Comparative studies confirm the advantage of using melted copper over solid copper as a catalyst substrate. The former leads to the formation of single crystalline h-BNNS that is several microns in size and mostly in mono- and bi-layer forms, in contrast to the polycrystalline and mixed multiple layers (1-10) yielded by the latter. This difference is likely to be due to the significantly reduced and uniformly distributed nucleation sites on the smooth melted surface, in contrast to the large amounts of unevenly distributed nucleation sites that are associated with grain boundaries and other defects on the solid surface. This synthesis is expected to contribute to the development of large-scale manufacturing of h-BNNS/graphene-based electronics.

Microporous Ni₁₁(HPO₃)₈(OH)₆ nanocrystals for high-performance flexible asymmetric all solid-state supercapacitors.

PubMed

Gao, Yanping; Zhao, Junhong; Run, Zhen; Zhang, Guangqin; Pang, Huan

2014-12-07

Microporous nickel phosphite [Ni11(HPO3)8(OH)6] nanocrystals were prepared using a hydrothermal method, and were successfully applied as a positive electrode in a flexible all solid-state asymmetric supercapacitor. Because of the specific micro/nanostructure, the flexible solid-state asymmetric supercapacitor can achieve a maximum energy density of 0.45 mW h cm(-3), which is higher than most reported supercapacitors. More importantly, the device performance remains efficient for 10,000 cycles.

Space Operation of the MOLA Laser

NASA Technical Reports Server (NTRS)

Afzal, Robert S.

2000-01-01

Interest in lasers for space applications such as active remote sensing in Earth orbit, planetary science, and inter-satellite laser communications is growing. These instruments typically use diode-pumped solid state lasers for the laser transmitter. The mission specifications and constraints of space qualification, place strict requirements on the design and operation of the laser. Although a laser can be built in the laboratory to meet performance specifications relatively routinely, tile mission constraints demand unique options and compromises in the materials used, and design to ensure the success of the mission. Presently, the best laser architecture for a light weight, rugged, high peak power and efficient transmitter is a diode laser pumped ND:YAG laser. Diode lasers can often obviate the need for water cooling, reduce the size and weight of the laser, increase the electrical to optical efficiency, system reliability, and lifetime. This paper describes the in-space operation and performance of the Mars Orbiter Laser Altimeter (MOLA) laser transmitter, representing the current state-of-the-art in space-based solid- state lasers.

Direct-write liquid phase transformations with a scanning transmission electron microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Unocic, Raymond R.; Lupini, Andrew R.; Borisevich, Albina Y.

The highly energetic electron beam from a scanning transmission electron microscope (STEM) can induce local changes in the state of matter, ranging from local knock-out and atomic movement, to amorphization/crystallization, and chemical/electrochemical reactions occuring at localized liquid-solid and gas-solid interfaces. To date, fundamental studies of e-beam induced phenomena and practical applications have been limited by conventional e-beam rastering modes that allow only for uniform e-beam exposures. Here we develop an automated liquid phase nanolithography method that is capable of directly writing nanometer scaled features within silicon nitride encapsulated liquid cells. An external beam control system, connected to the scan coilsmore » of an aberration-corrected STEM, is used to precisely control the position, dwell time, and scan velocity of a sub-nanometer STEM probe. Site-specific locations in a sealed liquid cell containing an aqueous solution of H 2PdCl 4 are irradiated to controllably deposit palladium onto silicon nitride membranes. We determine the threshold electron dose required for the radiolytic deposition of metallic palladium, explore the influence of electron dose on the feature size and morphology of nanolithographically patterned nanostructures, and propose a feedback-controlled monitoring method for active control of the nanofabricated structures through STEM detector signal monitoring. As a result, this approach enables both fundamental studies of electron beam induced interactions with matter, as well as opens a pathway to fabricate nanostructures with tailored architectures and chemistries via shape-controlled nanolithographic patterning from liquid phase precursors.« less

Direct-write liquid phase transformations with a scanning transmission electron microscope

DOE PAGES

Unocic, Raymond R.; Lupini, Andrew R.; Borisevich, Albina Y.; ...

2016-08-03

The highly energetic electron beam from a scanning transmission electron microscope (STEM) can induce local changes in the state of matter, ranging from local knock-out and atomic movement, to amorphization/crystallization, and chemical/electrochemical reactions occuring at localized liquid-solid and gas-solid interfaces. To date, fundamental studies of e-beam induced phenomena and practical applications have been limited by conventional e-beam rastering modes that allow only for uniform e-beam exposures. Here we develop an automated liquid phase nanolithography method that is capable of directly writing nanometer scaled features within silicon nitride encapsulated liquid cells. An external beam control system, connected to the scan coilsmore » of an aberration-corrected STEM, is used to precisely control the position, dwell time, and scan velocity of a sub-nanometer STEM probe. Site-specific locations in a sealed liquid cell containing an aqueous solution of H 2PdCl 4 are irradiated to controllably deposit palladium onto silicon nitride membranes. We determine the threshold electron dose required for the radiolytic deposition of metallic palladium, explore the influence of electron dose on the feature size and morphology of nanolithographically patterned nanostructures, and propose a feedback-controlled monitoring method for active control of the nanofabricated structures through STEM detector signal monitoring. As a result, this approach enables both fundamental studies of electron beam induced interactions with matter, as well as opens a pathway to fabricate nanostructures with tailored architectures and chemistries via shape-controlled nanolithographic patterning from liquid phase precursors.« less

Solid Lubricated Silicon Nitride Bearings at High Speed and Temperature - Phase 1

DTIC Science & Technology

1982-02-01

by a calibrated load beam. The thermocouples and heaters were connected to the proper recording channels and controllers. Ceramic fiber insulation was...Attention: H-. Woerhie Mughes Aircraft Company 11940 W. Jefferson Blvd. "Culver City* CA 90230 SAttention: No N. Gardos MS D133 - Bldg. 6 lIT Research

Vacancy-Controlled Na+ Superion Conduction in Na11 Sn2 PS12.

PubMed

Duchardt, Marc; Ruschewitz, Uwe; Adams, Stefan; Dehnen, Stefanie; Roling, Bernhard

2018-01-26

Highly conductive solid electrolytes are crucial to the development of efficient all-solid-state batteries. Meanwhile, the ion conductivities of lithium solid electrolytes match those of liquid electrolytes used in commercial Li + ion batteries. However, concerns about the future availability and the price of lithium made Na + ion conductors come into the spotlight in recent years. Here we present the superionic conductor Na 11 Sn 2 PS 12 , which possesses a room temperature Na + conductivity close to 4 mS cm -1 , thus the highest value known to date for sulfide-based solids. Structure determination based on synchrotron X-ray powder diffraction data proves the existence of Na + vacancies. As confirmed by bond valence site energy calculations, the vacancies interconnect ion migration pathways in a 3D manner, hence enabling high Na + conductivity. The results indicate that sodium electrolytes are about to equal the performance of their lithium counterparts. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improvement of efficiency in graphene/gallium nitride nanowire on Silicon photoelectrode for overall water splitting

NASA Astrophysics Data System (ADS)

Bae, Hyojung; Rho, Hokyun; Min, Jung-Wook; Lee, Yong-Tak; Lee, Sang Hyun; Fujii, Katsushi; Lee, Hyo-Jong; Ha, Jun-Seok

2017-11-01

Gallium nitride (GaN) nanowires are one of the most promising photoelectrode materials due to their high stability in acidic and basic electrolytes, and tunable band edge potentials. In this study, GaN nanowire arrays (GaN NWs) were prepared by molecular beam epitaxy (MBE); their large surface area enhanced the solar to hydrogen conversion efficiency. More significantly, graphene was grown by chemical vapor deposition (CVD), which enhanced the electron transfer between NWs for water splitting and protected the GaN NW surface. Structural characterizations of the prepared composite were performed using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The photocurrent density of Gr/GaN NWs exhibited a two-fold increase over pristine GaN NWs and sustained water splitting up to 70 min. These improvements may accelerate possible applications for hydrogen generation with high solar to hydrogen conversion efficiency.

Powder Injection Molding of Ceramic Engine Components for Transportation

NASA Astrophysics Data System (ADS)

Lenz, Juergen; Enneti, Ravi K.; Onbattuvelli, Valmikanathan; Kate, Kunal; Martin, Renee; Atre, Sundar

2012-03-01

Silicon nitride has been the favored material for manufacturing high-efficiency engine components for transportation due to its high temperature stability, good wear resistance, excellent corrosion resistance, thermal shock resistance, and low density. The use of silicon nitride in engine components greatly depends on the ability to fabricate near net-shape components economically. The absence of a material database for design and simulation has further restricted the engineering community in developing parts from silicon nitride. In this paper, the design and manufacturability of silicon nitride engine rotors for unmanned aerial vehicles by the injection molding process are discussed. The feedstock material property data obtained from experiments were used to simulate the flow of the material during injection molding. The areas susceptible to the formation of defects during the injection molding process of the engine component were identified from the simulations. A test sample was successfully injection molded using the feedstock and sintered to 99% density without formation of significant observable defects.

A parametric finite element method for solid-state dewetting problems with anisotropic surface energies

NASA Astrophysics Data System (ADS)

Bao, Weizhu; Jiang, Wei; Wang, Yan; Zhao, Quan

2017-02-01

We propose an efficient and accurate parametric finite element method (PFEM) for solving sharp-interface continuum models for solid-state dewetting of thin films with anisotropic surface energies. The governing equations of the sharp-interface models belong to a new type of high-order (4th- or 6th-order) geometric evolution partial differential equations about open curve/surface interface tracking problems which include anisotropic surface diffusion flow and contact line migration. Compared to the traditional methods (e.g., marker-particle methods), the proposed PFEM not only has very good accuracy, but also poses very mild restrictions on the numerical stability, and thus it has significant advantages for solving this type of open curve evolution problems with applications in the simulation of solid-state dewetting. Extensive numerical results are reported to demonstrate the accuracy and high efficiency of the proposed PFEM.

Modeling the hydrodynamic and electrochemical efficiency of semi-solid flow batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brunini, VE; Chiang, YM; Carter, WC

2012-05-01

A mathematical model of flow cell operation incorporating hydrodynamic and electrochemical effects in three dimensions is developed. The model and resulting simulations apply to recently demonstrated high energy-density semi-solid flow cells. In particular, state of charge gradients that develop during low flow rate operation and their effects on the spatial non-uniformity of current density within flow cells are quantified. A one-dimensional scaling model is also developed and compared to the full three-dimensional simulation. The models are used to demonstrate the impact of the choice of electrochemical couple on flow cell performance. For semi-solid flow electrodes, which can use solid activemore » materials with a wide variety of voltage-capacity responses, we find that cell efficiency is maximized for electrochemical couples that have a relatively flat voltage vs. capacity curve, operated under slow flow conditions. For example, in flow electrodes limited by macroscopic charge transport, an LiFePO4-based system requires one-third the polarization to reach the same cycling rate as an LiCoO2-based system, all else being equal. Our conclusions are generally applicable to high energy density flow battery systems, in which flow rates can be comparatively low for a given required power. (C) 2012 Elsevier Ltd. All rights reserved.« less

DNA translocation through graphene nanopores.

PubMed

Merchant, Christopher A; Healy, Ken; Wanunu, Meni; Ray, Vishva; Peterman, Neil; Bartel, John; Fischbein, Michael D; Venta, Kimberly; Luo, Zhengtang; Johnson, A T Charlie; Drndić, Marija

2010-08-11

We report on DNA translocations through nanopores created in graphene membranes. Devices consist of 1-5 nm thick graphene membranes with electron-beam sculpted nanopores from 5 to 10 nm in diameter. Due to the thin nature of the graphene membranes, we observe larger blocked currents than for traditional solid-state nanopores. However, ionic current noise levels are several orders of magnitude larger than those for silicon nitride nanopores. These fluctuations are reduced with the atomic-layer deposition of 5 nm of titanium dioxide over the device. Unlike traditional solid-state nanopore materials that are insulating, graphene is an excellent electrical conductor. Use of graphene as a membrane material opens the door to a new class of nanopore devices in which electronic sensing and control are performed directly at the pore.

Progress in high duty cycle, highly efficient fiber coupled 940-nm pump modules for high-energy class solid-state lasers

NASA Astrophysics Data System (ADS)

Platz, R.; Frevert, C.; Eppich, B.; Rieprich, J.; Ginolas, A.; Kreutzmann, S.; Knigge, S.; Erbert, G.; Crump, P.

2018-03-01

Diode lasers pump sources for future high-energy-class laser systems based on Yb-doped solid state amplifiers must deliver high optical intensities, high conversion efficiency (ηE = > 50%) at high repetition rates (f = 100 Hz) and long pulse widths (τ = 0.5…2 ms). Over the last decade, a series of pump modules has been developed at the Ferdinand-BraunInstitut to address these needs. The latest modules use novel wide-aperture single emitter diode lasers in passively side cooled stacks, operate at τ = 1 ms, f = 100…200 Hz and deliver 5…6 kW optical output power from a fiber with 1.9 mm core diameter and NA of 0.22, for spatial brightness BΩ > 1 MW/cm2 sr. The performance to date and latest developments in these high brightness modules are summarized here with recent work focusing on extending operation to other pumping conditions, as needed for alternative solid state laser designs. Specifically, the electro-optic, spectral and beam propagation characteristics of the module and its components are studied as a function of τ for a fixed duty cycle DC = 10% for τ = 1...100 ms, and first data is shown for continuous wave operation. Clear potential is seen to fulfill more demanding specifications without design changes. For example, high power long-pulse operation is demonstrated, with a power of > 5 kW at τ = 100 ms. Higher brightness operation is also confirmed at DC = 10% and τ = 1 ms, with > 5 kW delivered in a beam with BΩ > 4 MW/cm2 sr.

A review of lithium and non-lithium based solid state batteries

NASA Astrophysics Data System (ADS)

Kim, Joo Gon; Son, Byungrak; Mukherjee, Santanu; Schuppert, Nicholas; Bates, Alex; Kwon, Osung; Choi, Moon Jong; Chung, Hyun Yeol; Park, Sam

2015-05-01

Conventional lithium-ion liquid-electrolyte batteries are widely used in portable electronic equipment such as laptop computers, cell phones, and electric vehicles; however, they have several drawbacks, including expensive sealing agents and inherent hazards of fire and leakages. All solid state batteries utilize solid state electrolytes to overcome the safety issues of liquid electrolytes. Drawbacks for all-solid state lithium-ion batteries include high resistance at ambient temperatures and design intricacies. This paper is a comprehensive review of all aspects of solid state batteries: their design, the materials used, and a detailed literature review of various important advances made in research. The paper exhaustively studies lithium based solid state batteries, as they are the most prevalent, but also considers non-lithium based systems. Non-lithium based solid state batteries are attaining widespread commercial applications, as are also lithium based polymeric solid state electrolytes. Tabular representations and schematic diagrams are provided to underscore the unique characteristics of solid state batteries and their capacity to occupy a niche in the alternative energy sector.

Direct laser immobilization of photosynthetic material on screen printed electrodes for amperometric biosensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boutopoulos, Christos; Zergioti, Ioanna; Touloupakis, Eleftherios

This letter demonstrates the direct laser printing of photosynthetic material onto low cost nonfunctionalized screen printed electrodes for the fabrication of photosynthesis-based amperometric biosensors. The high kinetic energy of the transferred material induces direct immobilization of the thylakoids onto the electrodes without the use of linkers. This type of immobilization is able to establish efficient electrochemical contact between proteins and electrode, stabilizing the photosynthetic biomolecule and transporting electrons to the solid state device with high efficiency. The functionality of the laser printed biosensors was evaluated by the detection of a common herbicide such as Linuron.

Highly efficient hydrogen release from formic acid using a graphitic carbon nitride-supported AgPd nanoparticle catalyst

NASA Astrophysics Data System (ADS)

Yao, Fang; Li, Xiao; Wan, Chao; Xu, Lixin; An, Yue; Ye, Mingfu; Lei, Zhao

2017-12-01

Bimetallic AgPd nanoparticles with various molar ratios immobilized on graphitic carbon nitride (g-C3N4) were successfully synthesized via a facile co-reduction approach. The powder XRD, XPS, TEM, EDX, ICP-AES and BET were employed to characterize the structure, size, composition and loading metal electronic states of the AgPd/g-C3N4 catalysts. The catalytic property of as-prepared catalysts for the dehydrogenation of formic acid (FA) with sodium formate (SF) as the additive was investigated. The performance of these catalysts, as indicated by the turnover frequency (TOF), depended on the composition of the prepared catalysts. Among all the AgPd/g-C3N4 catalysts tested, Ag9Pd91/g-C3N4 was found to be an exceedingly high activity for decomposing FA into H2 with TOF up to 480 h-1 at 323 K. The prepared catalyst is thus a potential candidate for triggering the widespread use of FA for H2 storage.

Nanotube phonon waveguide

DOEpatents

Chang, Chih-Wei; Zettl, Alexander K.

2013-10-29

Disclosed are methods and devices in which certain types of nanotubes (e.g., carbon nanotubes and boron nitride nanotubes conduct heat with high efficiency and are therefore useful in electronic-type devices.

Engineering the Membrane/Electrode Interface To Improve the Performance of Solid-State Supercapacitors.

PubMed

Huang, Chun; Zhang, Jin; Snaith, Henry J; Grant, Patrick S

2016-08-17

This paper investigates the effect of adding a 450 nm layer based on porous TiO2 at the interface between a 4.5 μm carbon/TiO2 nanoparticle-based electrode and a polymer electrolyte membrane as a route to improve energy storage performance in solid-state supercapacitors. Electrochemical characterization showed that adding the interface layer reduced charge transfer resistance, promoted more efficient ion transfer across the interface, and significantly improved charge/discharge dynamics in a solid-state supercapacitor, resulting in an increased areal capacitance from 45.3 to 111.1 mF cm(-2) per electrode at 0.4 mA cm(-2).

Wide wavelength range tunable one-dimensional silicon nitride nano-grating guided mode resonance filter based on azimuthal rotation

NASA Astrophysics Data System (ADS)

Yukino, Ryoji; Sahoo, Pankaj K.; Sharma, Jaiyam; Takamura, Tsukasa; Joseph, Joby; Sandhu, Adarsh

2017-01-01

We describe wavelength tuning in a one dimensional (1D) silicon nitride nano-grating guided mode resonance (GMR) structure under conical mounting configuration of the device. When the GMR structure is rotated about the axis perpendicular to the surface of the device (azimuthal rotation) for light incident at oblique angles, the conditions for resonance are different than for conventional GMR structures under classical mounting. These resonance conditions enable tuning of the GMR peak position over a wide range of wavelengths. We experimental demonstrate tuning over a range of 375 nm between 500 nm˜875 nm. We present a theoretical model to explain the resonance conditions observed in our experiments and predict the peak positions with show excellent agreement with experiments. Our method for tuning wavelengths is simpler and more efficient than conventional procedures that employ variations in the design parameters of structures or conical mounting of two-dimensional (2D) GMR structures and enables a single 1D GMR device to function as a high efficiency wavelength filter over a wide range of wavelengths. We expect tunable filters based on this technique to be applicable in a wide range of fields including astronomy and biomedical imaging.

Thermodynamic study on the role of hydrogen during the MOVPE growth of group III nitrides

NASA Astrophysics Data System (ADS)

Koukitu, Akinori; Taki, Tetsuya; Takahashi, Naoyuki; Seki, Hisashi

1999-02-01

The role of hydrogen during the MOVPE growth of group III nitrides is investigated from a thermodynamic point of view. The effect of hydrogen is reported for the driving force for the deposition of binary nitrides as functions of growth temperature and V/III ratio. The effect of hydrogen for the InGaN growth is discussed for the vapor-solid relationship, the formation of compositional inhomogeneity and input partial pressure of the group III elements. The difference between the growth reaction of the indium containing nitrides and that of other III-V compounds is also discussed.

Fabrication and characterization of III-nitride nanophotonic devices

NASA Astrophysics Data System (ADS)

Dahal, Rajendra Prasad

III-nitride photonic devices such as photodetectors (PDs), light emitting diode (LEDs), solar cells and optical waveguide amplifiers were designed, fabricated and characterized. High quality AlN epilayers were grown on sapphire and n-SiC substrates by metal organic chemical vapor deposition and utilized as active deep UV (DUV) photonic materials for the demonstration of metal-semiconductor-metal (MSM) detectors, Schottky barrier detectors, and avalanche photodetectors (APDs). AlN DUV PDs exhibited peak responsivity at 200 nm with a very sharp cutoff wavelength at 207 nm and extremely low dark current (<10 fA), very high breakdown voltages, high responsivity, and more than four orders of DUV to UV/visible rejection ratio. AlN Schottky PDs grown on n-SiC substrates exhibited high zero bias responsivity and a thermal energy limited detectivity of about 1.0 x 1015 cm Hz 1/2 W-1. The linear mode operation of AlN APDs with the shortest cutoff wavelength (210 nm) and a photocurrent multiplication of 1200 was demonstrated. A linear relationship between device size and breakdown field was observed for AlN APDs. Photovoltaic operation of InGaN solar cells in wavelengths longer than that of previous attainments was demonstrated by utilizing In xGa1-xN/GaN MQWs as the active layer. InxGa1-xN/GaN MQWs solar cells with x =0.3 exhibited open circuit voltage of about 2 V, a fill factor of about 60% and external quantum efficiency of 40% at 420 nm and 10% at 450 nm. The performance of InxGa1-xN/GaN MQWs solar cell was found to be highly correlated with the crystalline quality of the InxGa 1-xN active layer. The possible causes of poorer PV characteristics for higher In content in InGaN active layer were explained. Photoluminescence excitation studies of GaN:Er and In0.06Ga 0.94N:Er epilayers showed that Er emission intensity at 1.54 mum increases significantly as the excitation energy is tuned from below to above the energy bandgap of these epilayers. Current-injected 1.54 mum LEDs based on heterogeneous integration of Er-doped III-nitride epilayers with III-nitride UV LEDs were demonstrated. Optical waveguide amplifiers based on AlGaN/GaN:Er/AlGaN heterostructures was designed, fabricated, and characterized. The measured optical loss of the devices was ˜3.5 cm-1 at 1.54 mum. A relative signal enhancement of about 8 dB/cm under the excitation of a broadband 365 nm nitride LED was achieved. The advantages and possible applications of 1.54 mum emitters and optical amplifiers based on Er doped III-nitrides in optical communications have been discussed.

High-Performance Sodium Metal Anodes Enabled by a Bifunctional Potassium Salt.

PubMed

Shi, Qiuwei; Zhong, Yiren; Wu, Min; Wang, Hongzhi; Wang, Hailiang

2018-04-12

Developing Na metal anodes that can be deeply cycled with high efficiency for a long time is a prerequisite for rechargeable Na metal batteries to be practically useful despite their notable advantages in theoretical energy density and potential low cost. Their high chemical reactivity with the electrolyte and tendency for dendrite formation are two major issues limiting the reversibility of Na metal electrodes. In this work, we introduce for the first time potassium bis(trifluoromethylsulfonyl)imide (KTFSI) as a bifunctional electrolyte additive to stabilize Na metal electrodes, in which the TFSI - anions decompose into lithium nitride and oxynitrides to render a desirable solid electrolyte interphase layer while the K + cations preferentially adsorb onto Na protrusions and provide electrostatic shielding to suppress dendritic deposition. Through the cooperation of the cations and anions, we have realized Na metal electrodes that can be deeply cycled at a capacity of 10 mAh cm -2 for hundreds of hours. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultrasound exfoliation of inorganic analogues of graphene

PubMed Central

2014-01-01

High-intensity ultrasound exfoliation of a bulk-layered material is an attractive route for large-scale preparation of monolayers. The monolayer slices could potentially be prepared with a high yield (up to 100%) in a few minutes. Exfoliation of natural minerals (such as tungstenite and molybdenite) or bulk synthetic materials (including hexagonal boron nitride (h-BN), hexagonal boron carbon nitride (h-BCN), and graphitic carbon nitride (g-C3N4)) in liquids leads to the breakdown of the 3D graphitic structure into a 2D structure; the efficiency of this process is highly dependent upon the physical effects of the ultrasound. Atomic force microscopy (AFM), transmission electron microscopy (TEM), and selected area electron diffraction (SAED) were employed to verify the quality of the exfoliation. Herein, this new method of exfoliation with ultrasound assistance for application to mono- and bilayered materials in hydrophobic and hydrophilic environments is presented. PMID:24708572

Ultrasound exfoliation of inorganic analogues of graphene.

PubMed

Stengl, Václav; Henych, Jiří; Slušná, Michaela; Ecorchard, Petra

2014-04-05

High-intensity ultrasound exfoliation of a bulk-layered material is an attractive route for large-scale preparation of monolayers. The monolayer slices could potentially be prepared with a high yield (up to 100%) in a few minutes. Exfoliation of natural minerals (such as tungstenite and molybdenite) or bulk synthetic materials (including hexagonal boron nitride (h-BN), hexagonal boron carbon nitride (h-BCN), and graphitic carbon nitride (g-C3N4)) in liquids leads to the breakdown of the 3D graphitic structure into a 2D structure; the efficiency of this process is highly dependent upon the physical effects of the ultrasound. Atomic force microscopy (AFM), transmission electron microscopy (TEM), and selected area electron diffraction (SAED) were employed to verify the quality of the exfoliation. Herein, this new method of exfoliation with ultrasound assistance for application to mono- and bilayered materials in hydrophobic and hydrophilic environments is presented.

The Dynamic Microbiota Profile During Pepper (Piper nigrum L.) Peeling by Solid-State Fermentation.

PubMed

Hu, Qisong; Zhang, Jiachao; Xu, Chuanbiao; Li, Congfa; Liu, Sixin

2017-06-01

White pepper (Piper nigrum L.), a well-known spice, is the main pepper processing product in Hainan province, China. The solid-state method of fermentation can peel pepper in a highly efficient manner and yield high-quality white pepper. In the present study, we used next-generation sequencing to reveal the dynamic changes in the microbiota during pepper peeling by solid-state fermentation. The results suggested that the inoculated Aspergillus niger was dominant throughout the fermentation stage, with its strains constituting more than 95% of the fungi present; thus, the fungal community structure was relatively stable. The bacterial community structure fluctuated across different fermentation periods; among the bacteria present, Pseudomonas, Tatumella, Pantoea, Acinetobacter, Lactococcus, and Enterobacter accounted for more than 95% of all bacteria. Based on the correlations among the microbial community, we found that Pseudomonas and Acinetobacter were significantly positively related with A. niger, which showed strong synergy with them. In view of the microbial functional gene analysis, we found that these three bacteria and fungi were closely related to the production of pectin esterase (COG4677) and acetyl xylan esterase (COG3458), the key enzymes for pepper peeling. The present research clarifies the solid-state fermentation method of pepper peeling and lays a theoretical foundation to promote the development of the pepper peeling process and the production of high-quality white pepper.

Enriched Boron-Doped Amorphous Selenium Based Position-Sensitive Solid-State Thermal Neutron Detector for MPACT Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mandal, Krishna

High-efficiency thermal neutron detectors with compact size, low power-rating and high spatial, temporal and energy resolution are essential to execute non-proliferation and safeguard protocols. The demands of such detector are not fully covered by the current detection system such as gas proportional counters or scintillator-photomultiplier tube combinations, which are limited by their detection efficiency, stability of response, speed of operation, and physical size. Furthermore, world-wide shortage of 3He gas, required for widely used gas detection method, has further prompted to design an alternative system. Therefore, a solid-state neutron detection system without the requirement of 3He will be very desirable. Tomore » address the above technology gap, we had proposed to develop new room temperature solidstate thermal neutron detectors based on enriched boron ( 10B) and enriched lithium ( 6Li) doped amorphous Se (As- 0.52%, Cl 5 ppm) semiconductor for MPACT applications. The proposed alloy materials have been identified for its many favorable characteristics - a wide bandgap (~2.2 eV at 300 K) for room temperature operation, high glass transition temperature (t g ~ 85°C), a high thermal neutron cross-section (for boron ~ 3840 barns, for lithium ~ 940 barns, 1 barn = 10 -24 cm 2), low effective atomic number of Se for small gamma ray sensitivity, and high radiation tolerance due to its amorphous structure.« less

Density of Trap States and Auger-mediated Electron Trapping in CdTe Quantum-Dot Solids.

PubMed

Boehme, Simon C; Azpiroz, Jon Mikel; Aulin, Yaroslav V; Grozema, Ferdinand C; Vanmaekelbergh, Daniël; Siebbeles, Laurens D A; Infante, Ivan; Houtepen, Arjan J

2015-05-13

Charge trapping is an ubiquitous process in colloidal quantum-dot solids and a major limitation to the efficiency of quantum dot based devices such as solar cells, LEDs, and thermoelectrics. Although empirical approaches led to a reduction of trapping and thereby efficiency enhancements, the exact chemical nature of the trapping mechanism remains largely unidentified. In this study, we determine the density of trap states in CdTe quantum-dot solids both experimentally, using a combination of electrochemical control of the Fermi level with ultrafast transient absorption and time-resolved photoluminescence spectroscopy, and theoretically, via density functional theory calculations. We find a high density of very efficient electron traps centered ∼0.42 eV above the valence band. Electrochemical filling of these traps increases the electron lifetime and the photoluminescence quantum yield by more than an order of magnitude. The trapping rate constant for holes is an order of magnitude lower that for electrons. These observations can be explained by Auger-mediated electron trapping. From density functional theory calculations we infer that the traps are formed by dicoordinated Te atoms at the quantum dot surface. The combination of our unique experimental determination of the density of trap states with the theoretical modeling of the quantum dot surface allows us to identify the trapping mechanism and chemical reaction at play during charge trapping in these quantum dots.

Li3PO4 Matrix Enables a Long Cycle Life and High Energy Efficiency Bismuth-Based Battery.

PubMed

Sun, Chuan-Fu; Hu, Junkai; Wang, Peng; Cheng, Xi-Yuan; Lee, Sang Bok; Wang, YuHuang

2016-09-14

Bismuth is a lithium-ion battery anode material that can operate at an equilibrium potential higher than graphite and provide a capacity twice as high as that of Li4Ti5O12, making it intrinsically free from lithium plating that may cause catastrophic battery failure. However, the potential of bismuth is hampered by its inferior cyclability (limited to tens of cycles). Here, we propose an "ion conductive solid-state matrix" approach to address this issue. By homogeneously confining bismuth nanoparticles in a solid-state γ-Li3PO4 matrix that is electrochemically formed in situ, the resulting composite anode exhibits a reversible capacity of 280 mA hours per gram (mA h/g) at a rate of 100 mA/g and a record cyclability among bismuth-based anodes up to 500 cycles with a capacity decay rate of merely 0.071% per cycle. We further show that full-cell batteries fabricated from this composite anode and commercial LiFePO4 cathode deliver a stable cell voltage of ∼2.5 V and remarkable energy efficiency up to 86.3%, on par with practical batteries (80-90%). This work paves a way for harnessing bismuth-based battery chemistry for the design of high capacity, safer lithium-ion batteries to meet demanding applications such as electric vehicles.

Synthesis of lithium nitride for neutron production target of BNCT by in situ lithium deposition and ion implantation

NASA Astrophysics Data System (ADS)

Ishiyama, S.; Baba, Y.; Fujii, R.; Nakamura, M.; Imahori, Y.

2012-12-01

To achieve high performance of BNCT (Boron Neutron Capture Therapy) device, Li3N/Li/Pd/Cu four layered Li target was designed and the structures of the synthesized four layered target were characterized by X-ray photoelectron spectroscopy. For the purpose of avoiding the radiation blistering and lithium evaporation, in situ vacuum deposition and nitridation techniques were established for in situ production and repairing maintenance of the lithium target. Following conclusions were derived: Uniform lithium layer of a few hundreds nanometer was formed on Pd/Cu multilayer surface by in situ vacuum deposition technique using metallic lithium as a source material. Lithium nitrides were formed by in situ nitridation reaction by the implantation of low-energy nitrogen ions on the deposited lithium layer surface. The chemical states of the nitridated zone were close to the stoichiometric lithium nitride, Li3N. This nitridated zone formed on surface of four layered lithium target is stable for a long time in air condition. The in situ nitridation is effective to protect lithium target from degradation by unfavorable reactions.

Fundamental tribological properties of ion-beam-deposited boron nitride films

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

1989-01-01

The adhesion, friction, and micromechanical properties of ion-beam-deposited boron nitride (BN) films are reviewed. The BN films are examined in contact with BN metals and other harder materials. For simplicity of discussion, the tribological properties of concern in the processes are separated into two parts. First, the pull-off force (adhesion) and the shear force required to break the interfacial junctions between contacting surfaces are discussed. The effects of surface films, hardness of metals, and temperature on tribological response with respect to adhesion and friction are considered. The second part deals with the abrasion of the BN films. Elastic, plastic, and fracture behavior of the BN films in solid-state contact are discussed. The scratch technique of determining the critical load needed to fracture interfacial adhesive bonds of BN films deposited on substrates is also addressed.

Fundamental tribological properties of ion-beam-deposited boron nitride films

NASA Technical Reports Server (NTRS)

Miyoshi, K.

1990-01-01

The adhesion, friction, and micromechanical properties of ion-beam-deposited boron nitride (BN) films are reviewed. The BN films are examined in contact with BN metals and other harder materials. For simplicity of discussion, the tribological properties of concern in the processes are separated into two parts. First, the pull-off force (adhesion) and the shear force required to break the interfacial junctions between contacting surfaces are discussed. The effects of surface films, hardness of metals, and temperature on tribological response with respect to adhesion and friction are considered. The second part deals with the abrasion of the BN films. Elastic, plastic, and fracture behavior of the BN films in solid-state contact are discussed. The scratch technique of determining the critical load needed to fracture interfacial adhesive bonds of BN films deposited on substrates is also addressed.

Improved color metrics in solid-state lighting via utilization of on-chip quantum dots

NASA Astrophysics Data System (ADS)

Mangum, Benjamin D.; Landes, Tiemo S.; Theobald, Brian R.; Kurtin, Juanita N.

2017-02-01

While Quantum Dots (QDs) have found commercial success in display applications, there are currently no widely available solid state lighting products making use of QD nanotechnology. In order to have real-world success in today's lighting market, QDs must be capable of being placed in on-chip configurations, as remote phosphor configurations are typically much more expensive. Here we demonstrate solid-state lighting devices made with on-chip QDs. These devices show robust reliability under both dry and wet high stress conditions. High color quality lighting metrics can easily be achieved using these narrow, tunable QD downconverters: CRI values of Ra > 90 as well as R9 values > 80 are readily available when combining QDs with green phosphors. Furthermore, we show that QDs afford a 15% increase in overall efficiency compared to traditional phosphor downconverted SSL devices. The fundamental limit of QD linewidth is examined through single particle QD emission studies. Using standard Cd-based QD synthesis, it is found that single particle linewidths of 20 nm FWHM represent a lower limit to the narrowness of QD emission in the near term.

Unidirectional waveguide grating antennas with uniform emission for optical phased arrays.

PubMed

Raval, Manan; Poulton, Christopher V; Watts, Michael R

2017-07-01

We demonstrate millimeter-scale optical waveguide grating antennas with unidirectional emission for integrated optical phased arrays. Unidirectional emission eliminates the fundamental problem of blind spots in the element factor of a phased array caused by reflections of antenna radiation within the substrate. Over 90% directionality is demonstrated using a design consisting of two silicon nitride layers. Furthermore, the perturbation strength along the antenna is apodized to achieve uniform emission for the first time, to the best of our knowledge, on a millimeter scale. This allows for a high effective aperture and receiving efficiency. The emission profile of the measured 3 mm long antenna has a standard deviation of 8.65% of the mean. These antennas are state of the art and will allow for integrated optical phased arrays with blind-spot-free high transmission output power and high receiving efficiency for LIDAR and free-space communication systems.

Growth of a sea urchin-like rutile TiO2 hierarchical microsphere film on Ti foil for a quasi-solid-state dye-sensitized solar cell.

PubMed

Ri, Jin Hyok; Wu, Shufang; Jin, Jingpeng; Peng, Tianyou

2017-11-30

A sea urchin-like rutile TiO 2 microsphere (RMS) film was fabricated on Ti foil via a hydrothermal process. The resulting rutile TiO 2 hierarchical microspheres with a diameter of 5-6 μm are composed of nanorods with a diameter of ∼200 nm and a length of 1-2 μm. The sea urchin-like hierarchical structure leads to the Ti foil-based RMS film possessing much better light-scattering capability in the visible region than the bare Ti foil. By using it as an underlayer of a nanosized anatase TiO 2 film (bTPP3) derived from a commercially available paste (TPP3), the corresponding bilayer Ti foil-based quasi-solid-state dye-sensitized solar cell (DSSC) only gives a conversion efficiency of 4.05%, much lower than the single bTPP3 film-based one on Ti foil (5.97%). By spin-coating a diluted TPP3 paste (sTPP3) on the RMS film prior to scraping the bTPP3 film, the resulting RMS/sTPP3/bTPP3 film-based DSSC achieves a significantly enhanced efficiency (7.27%). The electrochemical impedance spectra (EIS) show that the RMS/sTPP3/bTPP3 film possesses better electron transport capability and longer electron lifetime than the bTPP3 film. This work not only provides the first example of directly growing rutile TiO 2 hierarchically structured microsphere film on Ti foil suitable for replacing the rigid, heavy and expensive transparent conductive oxide (TCO) glass substrate to serve as a light-scattering underlayer of Ti foil-based quasi-solid-state DSSCs, but also paves a new route to develop Ti foil-based flexible DSSCs with high efficiency, low cost and a wide application field through optimizing the composition and structure of the photoanode.

Demonstration of the Feasibility of High Temperature Bearing Lubrication From Carbonaceous Gases

NASA Technical Reports Server (NTRS)

Blanchet, Thierry A.; Sawyer, W. Gregory

1996-01-01

Research has been conducted on silicon nitride pin-on-disk sliding contacts at temperatures of up to 520 C, and four-ball rolling contacts with silicon nitride balls and 52100 steel or silicon nitride races at 590 C. These tests were conducted in a variety of gaseous environments in order to determine the effects of simulated engine exhaust gas on the carbonaceous gas decomposition lubrication scheme. In rolling tests with steel races and exhaust gas the wear track depth was roughly half that of tests run in nitrogen gas alone. The deposition of lubricous microcrystalline graphitic carbon on the rolling surfaces, generated from the carbon monoxide within the exhaust gas mixture, was verified by microfocused Raman spectroscopy. Ten-fold reductions in rolling wear could be achieved by the exhaust gas atmosphere in cases where water vapor was removed or not present. The exhaust gas mixture alone was not found to provide any lubricating effect on silicon nitride sliding contacts, where the rate of wear greatly exceeds the rate of carbon deposition. Directed admixture of acetylene (as low as 5% of the exhaust gas flow rates), has provided reductions in both wear volume and coefficient of friction by factors of 60X and 20X respectively for sliding contacts during the initial 80 m of sliding distance. Exhaust gas atmosphere with the acetylene admixture provided 65OX reductions in steady state wear rate compared to that measured for sliding contacts in dry N2. Such acetylene admixture also augments the ability of the exhaust gas atmosphere to lubricate high-temperature rolling contacts, with up to 25-fold reductions in wear track depth compared to those measured in the presence of N2 alone. In addition to providing some lubricating benefit itself, an important potential role of the exhaust gas from rich mixtures would be to shield bearings from 02. Such shielding enables surface deposition of lubricous pyrolytic carbon from the acetylene admixture, instead of combustion, rendering feasible the continuously replenished solid lubrication of high-temperature bearing surfaces.

Structure refinement for tantalum nitrides nanocrystals with various morphologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Lianyun; School of Science, Beijing Jiaotong University, 3 Shang Yuan Cun, Haidian District, Beijing 100044; Huang, Kai

2012-07-15

Graphical abstract: Tantalum nitrides nanocrystals with various phases and morphologies for the first time have been synthesized through homogenous sodium reduction under low temperature with the subsequent annealing process under high vacuum. Highlights: ► The spherical TaN, cuboidal TaN{sub 0.83} and TaN{sub 0.5} nanocrystals have been synthesized through homogenous sodium reduction under low temperature with the subsequent annealing process under high vacuum. ► The crystal structures of different tantalum nitrides were determined by Rietveld refinement on the X-ray diffraction data and the examinations of electron microcopies. ► The specific surface area of the tantalum nitrides powders was around 10 m{supmore » 2} g{sup −1}. ► Tantalum nitrides powders could be suitable for capacitor with high specific capacitance. -- Abstract: Tantalum nitrides (TaN{sub x}) nanocrystals with different phase and morphology have been synthesized through homogenous sodium reduction under low temperature with the subsequent annealing process under high vacuum. The crystal structures of tantalum nitrides were determined by Rietveld refinement based on the X-ray diffraction data. The morphologies of various tantalum nitrides nanocrystals in high quality were analyzed through the electron microcopies examinations. The spherical TaN nanoparticles, cuboidal TaN{sub 0.83} and TaN{sub 0.5} nanocrystals have been selectively prepared at different annealing temperatures. In addition, the specific surface areas of the tantalum nitrides nanocrystals measured by BET method were around 9.87–11.64 m{sup 2} g{sup −1}, indicating that such nano-sized tantalum nitrides could be suitable for capacitor with high specific capacitance.« less

High Energy, Single-Mode, All-Solid-State and Tunable UV Laser Transmitter

NASA Technical Reports Server (NTRS)

Prasad, Narasimha S.; Singh, Upendra N.; Hovis, FLoyd

2007-01-01

A high energy, single mode, all solid-state Nd:YAG laser primarily for pumping an UV converter is developed. Greater than 1 J/pulse at 50 HZ PRF and pulse widths around 22 ns have been demonstrated. Higher energy, greater efficiency may be possible. Refinements are known and practical to implement. Technology Demonstration of a highly efficient, high-pulse-energy, single mode UV wavelength generation using flash lamp pumped laser has been achieved. Greater than 90% pump depletion is observed. 190 mJ extra-cavity SFG; IR to UV efficiency > 21% (> 27% for 1 mJ seed). 160 mJ intra-cavity SFG; IR to UV efficiency up to 24% Fluence < 1 J/sq cm for most beams. The pump beam quality of the Nd:YAG pump laser is being refined to match or exceed the above UV converter results. Currently the Nd:YAG pump laser development is a technology demonstration. System can be engineered for compact packaging.

Development of novel technologies to enhance performance and reliability of III-Nitride avalanche photodiodes

NASA Astrophysics Data System (ADS)

Suvarna, Puneet Harischandra

Solar-blind ultraviolet avalanche photodiodes are an enabling technology for applications in the fields of astronomy, communication, missile warning systems, biological agent detection and particle physics research. Avalanche photodiodes (APDs) are capable of detecting low-intensity light with high quantum efficiency and signal-to-noise ratio without the need for external amplification. The properties of III-N materials (GaN and AlGaN) are promising for UV photodetectors that are highly efficient, radiation-hard and capable of visible-blind or solar-blind operation without the need for external filters. However, the realization of reliable and high performance III-N APDs and imaging arrays has several technological challenges. The high price and lack of availability of bulk III-N substrates necessitates the growth of III-Ns on lattice mismatched substrates leading to a high density of dislocations in the material that can cause high leakage currents, noise and premature breakdown in APDs. The etched sidewalls of III-N APDs and high electric fields at contact edges are also detrimental to APD performance and reliability. In this work, novel technologies have been developed and implemented that address the issues of performance and reliability in III-Nitride based APDs. To address the issue of extended defects in the bulk of the material, a novel pulsed MOCVD process was developed for the growth of AlGaN. This process enables growth of high crystal quality AlxGa1-xN with excellent control over composition, doping and thickness. The process has also been adapted for the growth of high quality III-N materials on silicon substrate for devices such as high electron mobility transistors (HEMTs). A novel post-growth defect isolation technique is also discussed that can isolate the impact of conductive defects from devices. A new sidewall passivation technique using atomic layer deposition (ALD) of dielectric materials was developed for III-N APDs that is effective in reducing the dark-current and trap states at sidewalls by close to an order of magnitude, leading to improved APD performance. Development and implementation of an ion implantation based contact edge termination technique for III-N APDs that helps prevent premature breakdown from the contact edge of the devices, has further lead to improved reliability. Finally novel improved III-N APD device designs are proposed using preliminary experiments and numerical simulations for future implementations.

Optical properties of wide gap semiconductors studied by means of cathodoluminescence

NASA Astrophysics Data System (ADS)

Fischer Ponce, Alec Mirco

III-nitride semiconductors have been found to be a suitable material for the fabrication of light-emitting diodes (LEDs) emitting in the visible and ultraviolet range through the use of indium gallium nitride (InGaN) active layers. Yet, achieving high-efficient and long lasting LEDs in the long wavelength range, especially in the green spectral region, is limited by difficulties of growth of InGaN layers with high indium content. Additionally, device efficiency is strongly dependent on the formation of low-resistive p-type gallium nitride (GaN)-based layers. In this dissertation, the optical properties of wide gap semiconductor are analyzed using cathodoluminescence imaging and spectroscopy, and time-resolved spectroscopic techniques. A transition at 3.2 eV in magnesium (Mg)-doped GaN has been revealed and it has been identified as a Mg-related donor-acceptor pair, which may be responsible for the increase in intensity with increasing magnesium concentration in the commonly observed donor-acceptor pair region. In a separate study, a decrease of the Mg acceptor energy level and the bulk resistivity in Mg-doped InGaN with increasing indium composition is observed, implying that InGaN p-layers should improve the device performance. Next, Mg-doped GaN and InGaN capping layers in LED structures grown under different ambient gases are shown to alter the quantum well (QW) luminescence. QWs grown with InGaN p-layers exhibit an improvement in the luminescence efficiency and a blue-shift due to reduction of the compressive misfit strain in the QWs. However, p-GaN layers grown under hydrogen ambient gas present a blue-shift of the QW emission. Hydrogen diffusion occurring after thermal annealing of the p-GaN layer may explain the reduction of piezoelectric field effects in polar InGaN quantum wells. In another study, InGaN QWs with high indium content grown in non-polar m-plane GaN were found to exhibit stacking faults originating at the first QW, relaxing the misfit strain in the subsequent layers. Finally, the optical and structural properties of highly luminescent zinc oxide (ZnO) tetrapod powders emitting in the visible green spectral range were studied with high spatial resolution. ZnO nanostructures are strong candidates for devices emitting light with very high efficiencies.

Highly Efficient Visible Colloidal Lead-Halide Perovskite Nanocrystal Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Yan, Fei; Xing, Jun; Xing, Guichuan; Quan, Lina; Tan, Swee Tiam; Zhao, Jiaxin; Su, Rui; Zhang, Lulu; Chen, Shi; Zhao, Yawen; Huan, Alfred; Sargent, Edward H.; Xiong, Qihua; Demir, Hilmi Volkan

2018-05-01

Lead-halide perovskites have been attracting attention for potential use in solid-state lighting. Following the footsteps of solar cells, the field of perovskite light-emitting diodes (PeLEDs) has been growing rapidly. Their application prospects in lighting, however, remain still uncertain due to a variety of shortcomings in device performance including their limited levels of luminous efficiency achievable thus far. Here we show high-efficiency PeLEDs based on colloidal perovskite nanocrystals (PeNCs) synthesized at room temperature possessing dominant first-order excitonic radiation (enabling a photoluminescence quantum yield of 71% in solid film), unlike in the case of bulk perovskites with slow electron-hole bimolecular radiative recombination (a second-order process). In these PeLEDs, by reaching charge balance in the recombination zone, we find that the Auger nonradiative recombination, with its significant role in emission quenching, is effectively suppressed in low driving current density range. In consequence, these devices reach a record high maximum external quantum efficiency of 12.9% reported to date and an unprecedentedly high power efficiency of 30.3 lm W-1 at luminance levels above 1000 cd m-2 as required for various applications. These findings suggest that, with feasible levels of device performance, the PeNCs hold great promise for their use in LED lighting and displays.

Experimental and theoretical investigations of functionalized boron nitride as electrode materials for Li-ion batteries

DOE PAGES

Zhang, Fan; Nemeth, Karoly; Bareno, Javier; ...

2016-03-03

The feasibility of synthesizing functionalized h-BN (FBN) via the reaction between molten LiOH and solid h-BN is studied for the first time and its first ever application as an electrode material in Li-ion batteries is evaluated. Density functional theory (DFT) calculations are performed to provide mechanistic understanding of the possible electrochemical reactions derived from the FBN. Various materials characterizations reveal that the melt-solid reaction can lead to exfoliation and functionalization of h-BN simultaneously, while electrochemical analysis proves that the FBN can reversibly store charges through surface redox reactions with good cycle stability and coulombic efficiency. As a result, the DFTmore » calculations have provided physical insights into the observed electrochemical properties derived from the FBN.« less

Apparatus for silicon nitride precursor solids recovery

DOEpatents

Crosbie, Gary M.; Predmesky, Ronald L.; Nicholson, John M.

1995-04-04

Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

Method for silicon nitride precursor solids recovery

DOEpatents

Crosbie, Gary M.; Predmesky, Ronald L.; Nicholson, John M.

1992-12-15

Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

Conformal Electroplating of Azobenzene-Based Solar Thermal Fuels onto Large-Area and Fiber Geometries.

PubMed

Zhitomirsky, David; Grossman, Jeffrey C

2016-10-05

There is tremendous growth in fields where small functional molecules and colloidal nanomaterials are integrated into thin films for solid-state device applications. Many of these materials are synthesized in solution and there often exists a significant barrier to transition them into the solid state in an efficient manner. Here, we develop a methodology employing an electrodepositable copolymer consisting of small functional molecules for applications in solar energy harvesting and storage. We employ azobenzene solar thermal fuel polymers and functionalize them to enable deposition from low concentration solutions in methanol, resulting in uniform and large-area thin films. This approach enables conformal deposition on a variety of conducting substrates that can be either flat or structured depending on the application. Our approach further enables control over film growth via electrodepsition conditions and results in highly uniform films of hundreds of nanometers to microns in thickness. We demonstrate that this method enables superior retention of solar thermal fuel properties, with energy densities of ∼90 J/g, chargeability in the solid state, and exceptional materials utilization compared to other solid-state processing approaches. This novel approach is applicable to systems such as photon upconversion, photovoltaics, photosensing, light emission, and beyond, where small functional molecules enable solid-state applications.

Porous-Shell Vanadium Nitride Nanobubbles with Ultrahigh Areal Sulfur Loading for High-Capacity and Long-Life Lithium-Sulfur Batteries.

PubMed

Ma, Lianbo; Yuan, Hao; Zhang, Wenjun; Zhu, Guoyin; Wang, Yanrong; Hu, Yi; Zhao, Peiyang; Chen, Renpeng; Chen, Tao; Liu, Jie; Hu, Zheng; Jin, Zhong

2017-12-13

Lithium-sulfur (Li-S) batteries hold great promise for the applications of high energy density storage. However, the performances of Li-S batteries are restricted by the low electrical conductivity of sulfur and shuttle effect of intermediate polysulfides. Moreover, the areal loading weights of sulfur in previous studies are usually low (around 1-3 mg cm -2 ) and thus cannot fulfill the requirement for practical deployment. Herein, we report that porous-shell vanadium nitride nanobubbles (VN-NBs) can serve as an efficient sulfur host in Li-S batteries, exhibiting remarkable electrochemical performances even with ultrahigh areal sulfur loading weights (5.4-6.8 mg cm -2 ). The large inner space of VN-NBs can afford a high sulfur content and accommodate the volume expansion, and the high electrical conductivity of VN-NBs ensures the effective utilization and fast redox kinetics of polysulfides. Moreover, VN-NBs present strong chemical affinity/adsorption with polysulfides and thus can efficiently suppress the shuttle effect via both capillary confinement and chemical binding, and promote the fast conversion of polysulfides. Benefiting from the above merits, the Li-S batteries based on sulfur-filled VN-NBs cathodes with 5.4 mg cm -2 sulfur exhibit impressively high areal/specific capacity (5.81 mAh cm -2 ), superior rate capability (632 mAh g -1 at 5.0 C), and long cycling stability.

Solid State Lasers from an Efficiency Perspective

NASA Technical Reports Server (NTRS)

Barnes, Norman P.

2007-01-01

Solid state lasers have remained a vibrant area of research because several major innovations expanded their capability. Major innovations are presented with emphasis focused on the laser efficiency. A product of efficiencies approach is developed and applied to describe laser performance. Efficiency factors are presented in closed form where practical and energy transfer effects are included where needed. In turn, efficiency factors are used to estimate threshold and slope efficiency, allowing a facile estimate of performance. Spectroscopic, thermal, and mechanical data are provided for common solid state laser materials.

Perspective: Toward efficient GaN-based red light emitting diodes using europium doping

NASA Astrophysics Data System (ADS)

Mitchell, Brandon; Dierolf, Volkmar; Gregorkiewicz, Tom; Fujiwara, Yasufumi

2018-04-01

While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available, the search for an efficient red LED based on GaN is ongoing. The realization of this LED is crucial for the monolithic integration of the three primary colors and the development of nitride-based full-color high-resolution displays. In this perspective, we will address the challenges of attaining red luminescence from GaN under current injection and the methods that have been developed to circumvent them. While several approaches will be mentioned, a large emphasis will be placed on the recent developments of doping GaN with Eu3+ to achieve an efficient red GaN-based LED. Finally, we will provide an outlook to the future of this material as a candidate for small scale displays such as mobile device screens or micro-LED displays.

Overall water splitting on (Ga(1-x)Zn(x))(N(1-x)O(x)) solid solution photocatalyst: relationship between physical properties and photocatalytic activity.

PubMed

Maeda, Kazuhiko; Teramura, Kentaro; Takata, Tsuyoshi; Hara, Michikazu; Saito, Nobuo; Toda, Kenji; Inoue, Yasunobu; Kobayashi, Hisayoshi; Domen, Kazunari

2005-11-03

The physical and photocatalytic properties of a novel solid solution between GaN and ZnO, (Ga(1-x)Zn(x))(N(1-x)O(x)), are investigated. Nitridation of a mixture of Ga(2)O(3) and ZnO at 1123 K for 5-30 h under NH(3) flow results in the formation of a (Ga(1-x)Zn(x))(N(1-x)O(x)) solid solution with x = 0.05-0.22. With increasing nitridation time, the zinc and oxygen concentrations decrease due to reduction of ZnO and volatilization of zinc, and the crystallinity and band gap energy of the product increase. The highest activity for overall water splitting is obtained for (Ga(1-x)Zn(x))(N(1-x)O(x)) with x = 0.12 after nitridation for 15 h. The crystallinity of the catalyst is also found to increase with increasing the ratio of ZnO to Ga(2)O(3) in the starting material, resulting in an increase in activity.

III-Nitride Nanowire Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wright, Jeremy Benjamin

2014-07-01

In recent years there has been a tremendous interest in nanoscale optoelectronic devices. Among these devices are semiconductor nanowires whose diameters range from 10-100 nm. To date, nanowires have been grown using many semiconducting material systems and have been utilized as light emitting diodes, photodetectors, and solar cells. Nanowires possess a relatively large index contrast relative to their dielectric environment and can be used as lasers. A key gure of merit that allows for nanowire lasing is the relatively high optical con nement factor. In this work, I discuss the optical characterization of 3 types of III-nitride nanowire laser devices.more » Two devices were designed to reduce the number of lasing modes to achieve singlemode operation. The third device implements low-group velocity mode lasing with a photonic crystal constructed of an array of nanowires. Single-mode operation is necessary in any application where high beam quality and single frequency operation is required. III-Nitride nanowire lasers typically operate in a combined multi-longitudinal and multi-transverse mode state. Two schemes are introduced here for controlling the optical modes and achieving single-mode op eration. The rst method involves reducing the diameter of individual nanowires to the cut-o condition, where only one optical mode propagates in the wire. The second method employs distributed feedback (DFB) to achieve single-mode lasing by placing individual GaN nanowires onto substrates with etched gratings. The nanowire-grating substrate acted as a distributed feedback mirror producing single mode operation at 370 nm with a mode suppression ratio (MSR) of 17 dB. The usage of lasers for solid state lighting has the potential to further reduce U.S. lighting energy usage through an increase in emitter e ciency. Advances in nanowire fabrication, speci cally a two-step top-down approach, have allowed for the demonstration of a multi-color array of lasers on a single chip that emit vertically. By tuning the geometrical properties of the individual lasers across the array, each individual nanowire laser produced a di erent emission wavelength yielding a near continuum of laser wavelengths. I successfully fabricated an array of emitters spanning a bandwidth of 60 nm on a single chip. This was achieved in the blue-violet using III-nitride photonic crystal nanowire lasers.« less

Achieving Ultrahigh Energy Density and Long Durability in a Flexible Rechargeable Quasi-Solid-State Zn-MnO2 Battery.

PubMed

Zeng, Yinxiang; Zhang, Xiyue; Meng, Yue; Yu, Minghao; Yi, Jianan; Wu, Yiqiang; Lu, Xihong; Tong, Yexiang

2017-07-01

Advanced flexible batteries with high energy density and long cycle life are an important research target. Herein, the first paradigm of a high-performance and stable flexible rechargeable quasi-solid-state Zn-MnO 2 battery is constructed by engineering MnO 2 electrodes and gel electrolyte. Benefiting from a poly(3,4-ethylenedioxythiophene) (PEDOT) buffer layer and a Mn 2+ -based neutral electrolyte, the fabricated Zn-MnO 2 @PEDOT battery presents a remarkable capacity of 366.6 mA h g -1 and good cycling performance (83.7% after 300 cycles) in aqueous electrolyte. More importantly, when using PVA/ZnCl 2 /MnSO 4 gel as electrolyte, the as-fabricated quasi-solid-state Zn-MnO 2 @PEDOT battery remains highly rechargeable, maintaining more than 77.7% of its initial capacity and nearly 100% Coulombic efficiency after 300 cycles. Moreover, this flexible quasi-solid-state Zn-MnO 2 battery achieves an admirable energy density of 504.9 W h kg -1 (33.95 mW h cm -3 ), together with a peak power density of 8.6 kW kg -1 , substantially higher than most recently reported flexible energy-storage devices. With the merits of impressive energy density and durability, this highly flexible rechargeable Zn-MnO 2 battery opens new opportunities for powering portable and wearable electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Single-molecule Protein Unfolding in Solid State Nanopores

PubMed Central

Talaga, David S.; Li, Jiali

2009-01-01

We use single silicon nitride nanopores to study folded, partially folded and unfolded single proteins by measuring their excluded volumes. The DNA-calibrated translocation signals of β-lactoglobulin and histidine-containing phosphocarrier protein match quantitatively with that predicted by a simple sum of the partial volumes of the amino acids in the polypeptide segment inside the pore when translocation stalls due to the primary charge sequence. Our analysis suggests that the majority of the protein molecules were linear or looped during translocation and that the electrical forces present under physiologically relevant potentials can unfold proteins. Our results show that the nanopore translocation signals are sensitive enough to distinguish the folding state of a protein and distinguish between proteins based on the excluded volume of a local segment of the polypeptide chain that transiently stalls in the nanopore due to the primary sequence of charges. PMID:19530678

Room temperature synthesis of heptazine-based microporous polymer networks as photocatalysts for hydrogen evolution.

PubMed

Kailasam, Kamalakannan; Schmidt, Johannes; Bildirir, Hakan; Zhang, Guigang; Blechert, Siegfried; Wang, Xinchen; Thomas, Arne

2013-06-25

Two emerging material classes are combined in this work, namely polymeric carbon nitrides and microporous polymer networks. The former, polymeric carbon nitrides, are composed of amine-bridged heptazine moieties and showed interesting performance as a metal-free photocatalyst. These materials have, however, to be prepared at high temperatures, making control of their chemical structure difficult. The latter, microporous polymer networks have received increasing interest due to their high surface area, giving rise to interesting applications in gas storage or catalysis. Here, the central building block of carbon nitrides, a functionalized heptazine as monomer, and tecton are used to create microporous polymer networks. The resulting heptazine-based microporous polymers show high porosity, while their chemical structure resembles the ones of carbon nitrides. The polymers show activity for the photocatalytic production of hydrogen from water, even under visible light illumination. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High power diode lasers for solid-state laser pumps

NASA Technical Reports Server (NTRS)

Linden, Kurt J.; Mcdonnell, Patrick N.

1994-01-01

The development and commercial application of high power diode laser arrays for use as solid-state laser pumps is described. Such solid-state laser pumps are significantly more efficient and reliable than conventional flash-lamps. This paper describes the design and fabrication of diode lasers emitting in the 780 - 900 nm spectral region, and discusses their performance and reliability. Typical measured performance parameters include electrical-to-optical power conversion efficiencies of 50 percent, narrow-band spectral emission of 2 to 3 nm FWHM, pulsed output power levels of 50 watts/bar with reliability values of over 2 billion shots to date (tests to be terminated after 10 billion shots), and reliable operation to pulse lengths of 1 ms. Pulse lengths up to 5 ms have been demonstrated at derated power levels, and CW performance at various power levels has been evaluated in a 'bar-in-groove' laser package. These high-power 1-cm stacked-bar arrays are now being manufactured for OEM use. Individual diode laser bars, ready for package-mounting by OEM customers, are being sold as commodity items. Commercial and medical applications of these laser arrays include solid-state laser pumping for metal-working, cutting, industrial measurement and control, ranging, wind-shear/atmospheric turbulence detection, X-ray generation, materials surface cleaning, microsurgery, ophthalmology, dermatology, and dental procedures.

Slurry Erosion Studies on Surface Modified 13Cr-4Ni Steels: Effect of Angle of Impingement and Particle Size

NASA Astrophysics Data System (ADS)

Manisekaran, T.; Kamaraj, M.; Sharrif, S. M.; Joshi, S. V.

2007-10-01

Hydroturbine steels, such as 13Cr-4Ni martensitic steels, are generally subjected to heavy-erosive wear and loss of efficiency due to solid particulate entrainment in the water. Surface-modified steels have proven to give better performance in terms of erosive wear resistance. In the present study, an attempt is made to investigate the effect of angle of impingement and particle size on slurry-jet erosion behavior of pulsed plasma nitrided and laser hardened 13Cr-4Ni steels. Laser hardening process has shown good performance at all angles of impingement due to martensitic transformation of retained austenite. Plastic deformation mode of material removal was also an evident feature of all laser-hardened surface damage locations. However, pulsed-plasma nitrided steels have exhibited chip formation and micro-cutting mode of erosive wear. Erosion with 150-300 μm size was twice compared to 150 μm size slurry particulates.

Fluorine-doped antiperovskite electrolyte for all-solid-state Lithium-ion batteries

DOE PAGES

Li, Yutao; Zhou, Weidong; Xin, Sen; ...

2016-06-30

A fluorine-doped antiperovskite Li-ion conducto Li 2(OH)X (X=Cl, Br) is shown to be a promising candidat for a solid electrolyte in an all-solid-state Li-ion rechargeabl battery. Substitution of F¯ for OH¯ transforms orthorhombi Li 2OHCl to a room-temperature cubic phase, which show electrochemical stability to 9 V versus Li +/Li and two orders o magnitude higher Li-ion conductivity than that of orthorhombi Li 2OHCl. As a result, an all-solid-state Li/LiFePO 4 with F-dope Li 2OHCl as the solid electrolyte showed good cyclability an a high coulombic efficiency over 40 charge/discharge cycles

Ceramic Near-Net Shaped Processing Using Highly-Loaded Aqueous Suspensions

NASA Astrophysics Data System (ADS)

Rueschhoff, Lisa

Ceramic materials offer great advantages over their metal counterparts, due to their lower density, higher hardness and wear resistance, and higher melting temperatures. However, the use of ceramics in applications where their properties would offer tremendous advantages are often limited due to the difficulty of forming them into complex and near-net shaped parts. Methods that have been developed to injection-mold or cast ceramics into more complicated shapes often use significant volume fractions of a carrier (often greater than 35 vol.% polymer), elevated temperature processing, or less-than-environmentally friendly chemicals where a complex chemical synthesis reaction must be timed perfectly for the approach to work. Furthermore, the continuing maturation of additive manufacturing methods requires a new approach for flowing/placing ceramic powders into useful designs. This thesis addresses the limitations of the current ceramic forming approaches by developing highly-stabilized and therefore high solids loading ceramic suspensions, with the requisite rheology for a variety of complex and near-net shaped forming techniques. Silicon nitride was chosen as a material of focus due to its high fracture toughness compared to other ceramic materials. Designing ceramic suspensions that are flowable at room temperature greatly simplifies processing as neither heating nor cooling are required during forming. Highly-loaded suspensions (>40 vol.%) are desired because all formed ceramic bodies have to be sintered to remove pores. Finally, using aqueous-based suspensions reduces any detrimental effect on the environment and tooling. The preparation of highly-loaded suspensions requires the development of a suitable dispersant through which particle-particle interactions are controlled. However, silicon nitride is difficult to stabilize in water due to complex surface and solution chemistry. In this study, aqueous silicon nitride suspensions up to 45 vol.% solids loading were dispersed using commercially available comb-type copolymer. These copolymers are used as superplasticizers in the concrete industry and are referred to as water-reducing admixtures (WRAs). Four different WRA dispersants were examined and chemical analysis determined that each was made up of a sodium salt of polyacrylic acid (PAA-Na) backbone with neutral polyethylene oxide (PEO) side chains that afford steric stabilization. The general structures of the WRAs were compared to each other by measuring the relative areas of their prominent FTIR peaks and calculating a PAA-Na/PEO peak ratio. Suspensions were made with as-received silicon nitride powders with 5 wt.% aluminum oxide and 5 wt.% yttrium oxide added as sintering aids. Three of the four WRA dispersants studied were able to produce suspensions with 43 vol.% solids loading and 5 vol.% polymer dispersant, while exhibiting a yield-pseudoplastic behavior for shear rates up to 30 s-1. At higher solids loading (45 to 47 vol.%), a shift to shear thickening behavior was observed at a critical shear rate for these WRAs. Those WRAs with a lower PAA-Na/PEO peak ratio displayed better stabilization and diminished shear thickening behavior. The vol.% of the dispersant was optimized, producing yield-pseudoplastic suspensions containing 45 vol.% solids loading with yield stresses less than 75 Pa, no shear thickening behavior, and viscosities less than 75 Pa-s for shear rates in the range of 1 to 30 s-1. Using suspensions prepared with two of the WRAs investigated in this work, silicon nitride near-net shaped parts were formed via a novel injection molding process by loading each suspension in a syringe and injecting them at a controlled rate into a mold. Each suspensions had carefully tailored yield-pseudoplastic rheology such that they can be injection molded at room temperature and low pressures (< 150 kPa). Four suspensions were studied; two different commercially available concrete water-reducing admixtures (WRAs) were used as dispersants with and without a polymer binder (Polyvinylprolidone, PVP) added for rheological modification and improved green body strength. Test bars formed via this process were sintered to high densities (up to 97% TD) without the use of external pressure, and had complete conversion to the desirable beta-Si3N4 phase with high flexural strengths up to 700 MPa. The specimen sets with the smallest average pore size on the fracture surface (77 mum) had the highest average flexural strengths of 573 MPa. The hardness of all specimens was approximately 16 GPa. The water-based suspensions, ease and low cost of processing, and robust mechanical properties obtained demonstrate this as a viable process for the economical and environmentally friendly production of Si3N4 parts. Finally, additive manufacturing was also used as a method to overcome ceramic forming difficulties and to create near-net shaped dense components via room-temperature direct ink writing. In this processes, highly loaded aqueous alumina suspensions were extruded in a layer-by-layer fashion using a low-cost syringe style 3D printer. With alumina as a model material, the effect of solids loading on rheology, specimen uniformity, density, microstructure, and mechanical properties was studied. All suspensions contained a polymer binder ( 5 vol.%), dispersant, and 51 to 58 vol.% alumina powder. Rheological measurements indicated all suspensions to be yield-pseudoplastic, and both yield stress and viscosity were found to increase with increasing alumina solids loading. Shear rates ranging from 19.5 to 24.2 s-1, corresponding to viscosities of 9.8 to 17.2 Pa·s, for the 53 - 56 vol.% alumina suspensions were found to produce the best results for the 1.25 mm tip employed during writing. All parts were sintered to greater than 98% of true density, with grain sizes ranging from 3.2 to 3.7 mum. The average flexure strength, which ranged from 134 to 157 MPa, was not influenced by the alumina solids loading. In limited study, additive manufacturing of silicon nitride suspensions stabilized with a WRA has been established. These processing routes have been proven as low-cost and viable means for producing robust ceramic parts, both of which can be tailored to many systems to expand the use of ceramics materials. Further studies on utilizing the flow stress behavior during both injection molding and direct ink writing could be beneficial in creating ceramic materials with carefully tailored microstructure to increase mechanical performance.

Silicon nitride photonics: from visible to mid-infrared wavelengths

NASA Astrophysics Data System (ADS)

Micó, Gloria; Bru, Luis A.; Pastor, Daniel; Doménech, David; Fernández, Juan; Sánchez, Ana; Cirera, Josep M.; Domínguez, Carlos; Muñoz, Pascual

2018-02-01

Silicon nitride has received a lot of attention during the last ten years, for applications such as bio-photonics, tele/datacom, optical signal processing and sensing. In this paper, firstly an updated review of the state of the art of silicon nitride photonics integration platforms will be provided. Secondly, our developments on a moderate confinement Si3N4 platform in the near-infrared will be presented. Finally, our steps towards establishing a Si3N4 based platform for broadband operation spanning from visible to mid-infrared wavelengths will be introduced.

Use of anionic surfactants for selective polishing of silicon dioxide over silicon nitride films using colloidal silica-based slurries

NASA Astrophysics Data System (ADS)

Penta, Naresh K.; Amanapu, H. P.; Peethala, B. C.; Babu, S. V.

2013-10-01

Four different anionic surfactants, sodium dodecyl sulfate, dodecyl benzene sulfonic acid (DBSA), dodecyl phosphate and Sodium lauroyl sarcosine, selected from the sulfate, phosphate, and carboxylic family, were investigated as additives in silica dispersions for selective polishing of silicon dioxide over silicon nitride films. We found that all these anionic surfactants suppress the nitride removal rates (RR) for pH ≤4 while more or less maintaining the oxide RRs, resulting in high oxide-to-nitride RR selectivity. The RR data obtained as a function of pH were explained based on pH dependent distributions of surfactant species, change in the zeta potentials of oxide and nitride surfaces, and thermogravimetric data. It appears that the negatively charged surfactant species preferentially adsorb on the positively charged nitride surface below IEP through its electrostatic interactions and form a bilayer adsorption, resulting in the suppression of nitride RRs. In contrast to the surfactants, K2SO4 interacts only weakly with the nitride surface and hence cannot suppress its RR.

High-efficiency white OLEDs based on small molecules

NASA Astrophysics Data System (ADS)

Hatwar, Tukaram K.; Spindler, Jeffrey P.; Ricks, M. L.; Young, Ralph H.; Hamada, Yuuhiko; Saito, N.; Mameno, Kazunobu; Nishikawa, Ryuji; Takahashi, Hisakazu; Rajeswaran, G.

2004-02-01

Eastman Kodak Company and SANYO Electric Co., Ltd. recently demonstrated a 15" full-color, organic light-emitting diode display (OLED) using a high-efficiency white emitter combined with a color-filter array. Although useful for display applications, white emission from organic structures is also under consideration for other applications, such as solid-state lighting, where high efficiency and good color rendition are important. By incorporating adjacent blue and orange emitting layers in a multi-layer structure, highly efficient, stable white emission has been attained. With suitable host and dopant combinations, a luminance yield of 20 cd/A and efficiency of 8 lm/W have been achieved at a drive voltage of less than 8 volts and luminance level of 1000 cd/m2. The estimated external efficiency of this device is 6.3% and a high level of operational stability is observed. To our knowledge, this is the highest performance reported so far for white organic electroluminescent devices. We will review white OLED technology and discuss the fabrication and operating characteristics of these devices.

Structural tuning of residual conductivity in highly mismatched III-V layers

DOEpatents

Han, Jung; Figiel, Jeffrey J.

2002-01-01

A new process to control the electrical conductivity of gallium nitride layers grown on a sapphire substrate has been developed. This process is based on initially coating the sapphire substrate with a thin layer of aluminum nitride, then depositing the gallium nitride thereon. This process allows one to controllably produce gallium nitride layers with resistivity varying over as much as 10 orders of magnitude, without requiring the introduction and activation of suitable dopants.

High Temperature Oxidation and Mechanical properties of Silicon Nitride.

DTIC Science & Technology

1980-11-30

The results of thermogravimentric studies on the rate of oxidation of chemically vapor-deposited Si3 N, at various temperatures are reported. Up to...only be such ceramics as Si3N4 -. In addition to the potential for increased engine efficiency through higher gas-inlet temperatures, the use of Si3 N...to replace cur- rently used Ni -or Co-based superalloys offers a significant weight reduction that can increase the performance of the propulsion system

III-Nitride, SiC and Diamond Materials for Electronic Devices. Symposium Held April 8-12 1996, San Francisco, California, U.S.A. Volume 423.

DTIC Science & Technology

1996-12-01

gallium, nitrogen and gallium nitride structures. Thus it can be shown to be transferable and efficient for predictive molecular -dynamic simulations on...potentials and forces for the molecular dynamics simulations are derived by means of a density-functional based nonorthogonal tight-binding (DF-TB) scheme...LDA). Molecular -dynamics simulations for determining the different reconstructions of the SiC surface use the slab method (two-dimensional periodic

Solid-state lasers for coherent communication and remote sensing

NASA Technical Reports Server (NTRS)

Byer, Robert L.

1990-01-01

Laser development, high efficiency, high power second harmonic generation, operation of optical parametric oscillators for wavelength diversity and tunability, and studies in coherent communications are reviewed.

Improving Reliability of High Power Quasi-CW Laser Diode Arrays for Pumping Solid State Lasers

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Baggott, Renee S.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.

2005-01-01

Most Lidar applications rely on moderate to high power solid state lasers to generate the required transmitted pulses. However, the reliability of solid state lasers, which can operate autonomously over long periods, is constrained by their laser diode pump arrays. Thermal cycling of the active regions is considered the primary reason for rapid degradation of the quasi-CW high power laser diode arrays, and the excessive temperature rise is the leading suspect in premature failure. The thermal issues of laser diode arrays are even more drastic for 2-micron solid state lasers which require considerably longer pump pulses compared to the more commonly used pump arrays for 1-micron lasers. This paper describes several advanced packaging techniques being employed for more efficient heat removal from the active regions of the laser diode bars. Experimental results for several high power laser diode array devices will be reported and their performance when operated at long pulsewidths of about 1msec will be described.

Nanoscale adhesion interactions in carbon nanotube based systems and experimental study of the mechanical properties of carbon and boron nitride nanotubes

NASA Astrophysics Data System (ADS)

Zheng, Meng

Part I: Carbon nanotubes (CNTs) are a type of 1D nanostructures, which possess extraordinary mechanical, electrical, thermal, and chemical properties and are promising for a number of applications. For many of their applications, CNTs will be assembled into micro or macro-scale structures (e.g. thin-films and yarns), or integrated with other bulk materials to form heterogeneous material systems and devices (e.g. nanocomposites and solid-state electronics). The interfaces formed among CNTs themselves and between the CNT and other material surfaces play crucial roles in the functioning and performance of CNT-based material systems and devices. Therefore, characterization of the interfacial interaction in CNT-based systems is a critical step to understand the nanoscale interface and tune the system and device design and manufacturing for optimal functioning and performance. In this part of dissertation, a combination of both mechanical and theoretical methods was employed to study the adhesion interactions in CNT-based systems. Part II: Both CNTs and boron nitride nanotubes (BNNTs) possess superb mechanical properties and are promising for a great many applications. They can be used in similar applications, such as reinforcing fibers in polymer composites based on their similar mechanical and thermal properties. CNTs are promising for electronics and sensors while BNNTs can be used as electrical insulators due to the tremendous differences of the electrical property. Furthermore, BNNTs can survive in high temperature and hazardous environments because of their resistant to oxidation and harsh chemicals. In order to optimize their applications, their mechanical properties should be fully understood. In this part of the dissertation research, first, the radial elasticity of single-walled CNTs and BNNTs was investigated by means of atomic force microscopy (AFM); secondly, the engineering radial deformations in single walled CNTs and BNNTs covered by monolayer grapheme oxide (GO) is presented.

Glass/BNNT Composite for Sealing Solid Oxide Fuel Cells

NASA Technical Reports Server (NTRS)

Bansal, Narottam P.; Hurst, Janet B.; Choi, Sung R.

2007-01-01

A material consisting of a barium calcium aluminosilicate glass reinforced with 4 weight percent of boron nitride nanotubes (BNNTs) has shown promise for use as a sealant in planar solid oxide fuel cells (SOFCs).

Method for exfoliation of hexagonal boron nitride

NASA Technical Reports Server (NTRS)

Lin, Yi (Inventor); Connell, John W. (Inventor)

2012-01-01

A new method is disclosed for the exfoliation of hexagonal boron nitride into mono- and few-layered nanosheets (or nanoplatelets, nanomesh, nanoribbons). The method does not necessarily require high temperature or vacuum, but uses commercially available h-BN powders (or those derived from these materials, bulk crystals) and only requires wet chemical processing. The method is facile, cost efficient, and scalable. The resultant exfoliated h-BN is dispersible in an organic solvent or water thus amenable for solution processing for unique microelectronic or composite applications.

Structure, phonons and related properties in zinc-IV-nitride (IV = silicon, germanium, tin), scandium nitride, and rare-earth nitrides

NASA Astrophysics Data System (ADS)

Paudel, Tula R.

This thesis presents a study of the phonons and related properties in two sets of nitride compounds, whose properties are until now relatively poorly known. The Zn-IV-N2 group of compounds with the group IV elements Si, Ge and Sn, form a series analogous to the well known III-N nitride series with group III element Al, Ga, In. Structurally, they can be derived by doubling the period of III-V compounds in the plane in two directions and replacing the group-III elements with Zn and a group-IV element in a particular ordered pattern. Even though they are similar to the well-known III-V nitride compounds, the study of the properties of these materials is in its early stages. The phonons in these materials and their relation to the phonons in the corresponding group-III nitrides are of fundamental interest. They are also of practical interest because the phonon related spectra such as infrared absorption and Raman spectroscopy are sensitive to the structural quality of the material and can thus be used to quantify the degree of crystalline perfection of real samples. First-principles calculations of the phonons and related ground state properties of these compounds were carried out using Density Functional Perturbation Theory (DFPT) with the Local Density Approximation (LDA) for exchange and correlation and using a pseudopotential plane wave implementation which was developed by several authors over the last decades. The main focus of our study is on the phonons at the center of the Brillouin zone because the latter are most directly related to commonly used spectroscopies to probe the vibrations in a solid: infrared reflectivity and Raman spectroscopy. For a semiconducting or insulating compound, a splitting occurs between transverse and longitudinal phonons at the Gamma-point because of the long-range nature of electrostatic forces. The concepts required to handle this problem are reviewed. Our discussion emphasizes how the various quantities required are related to various types of derivatives of the total energy versus perturbation parameters. Essentially, the long-range forces have to be treated explicitly in terms of the Born effective charge tensors which are the mixed second derivatives of the total energy of the system with respect to static electric fields and atomic displacements whereas the short-range part of the force constants is obtained from second derivatives versus atomic displacements. The second derivatives versus electrostatic field give the high-frequency dielectric function. The longitudinal and transverse response of the solid is then obtained from the calculation of the frequency dependent dielectric response function in the frequency range of the phonons. We thus present as results: first the equilibrium structure, i.e. the optimized lattice constants and internal coordinates which form the starting point for any study of the vibrational modes; second the vibrational modes at Gamma including their LO-TO splittings, third, the Born effective charges and the dielectric functions which are directly related to the experimental infrared spectra. In order to obtain the Raman intensities, one needs the derivatives of the electric susceptibility versus atomic displacements. (Abstract shortened by UMI.)

Molecular-Level Control of Ciclopirox Olamine Release from Poly(ethylene oxide)-Based Mucoadhesive Buccal Films: Exploration of Structure-Property Relationships with Solid-State NMR.

PubMed

Urbanova, Martina; Gajdosova, Marketa; Steinhart, Miloš; Vetchy, David; Brus, Jiri

2016-05-02

Mucoadhesive buccal films (MBFs) provide an innovative way to facilitate the efficient site-specific delivery of active compounds while simultaneously separating the lesions from the environment of the oral cavity. The structural diversity of these complex multicomponent and mostly multiphase systems as well as an experimental strategy for their structural characterization at molecular scale with atomic resolution were demonstrated using MBFs of ciclopirox olamine (CPX) in a poly(ethylene oxide) (PEO) matrix as a case study. A detailed description of each component of the CPX/PEO films was followed by an analysis of the relationships between each component and the physicochemical properties of the MBFs. Two distinct MBFs were identified by solid-state NMR spectroscopy: (i) at low API (active pharmaceutical ingredient) loading, a nanoheterogeneous solid solution of CPX molecularly dispersed in an amorphous PEO matrix was created; and (ii) at high API loading, a pseudoco-crystalline system containing CPX-2-aminoethanol nanocrystals incorporated into the interlamellar space of a crystalline PEO matrix was revealed. These structural differences were found to be closely related to the mechanical and physicochemical properties of the prepared MBFs. At low API loading, the polymer chains of PEO provided sufficient quantities of binding sites to stabilize the CPX that was molecularly dispersed in the highly amorphous semiflexible polymer matrix. Consequently, the resulting MBFs were soft, with low tensile strength, plasticity, and swelling index, supporting rapid drug release. At high CPX content, however, the active compounds and the polymer chains simultaneously cocrystallized, leaving the CPX to form nanocrystals grown directly inside the spherulites of PEO. Interfacial polymer-drug interactions were thus responsible not only for the considerably enhanced plasticity of the system but also for the exclusive crystallization of CPX in the thermodynamically most stable polymorphic form, Form I, which exhibited reduced dissolution kinetics. The bioavailability of CPX olamine formulated as PEO-based MBFs can thus be effectively controlled by inducing the complete dispersion and/or microsegregation and nanocrystallization of CPX olamine in the polymer matrix. Solid-state NMR spectroscopy is an efficient tool for exploring structure-property relationships in these complex pharmaceutical solids.

Highly catalytic and stabilized titanium nitride nanowire array-decorated graphite felt electrodes for all vanadium redox flow batteries

NASA Astrophysics Data System (ADS)

Wei, L.; Zhao, T. S.; Zeng, L.; Zeng, Y. K.; Jiang, H. R.

2017-02-01

In this work, we prepare a highly catalytic and stabilized titanium nitride (TiN) nanowire array-decorated graphite felt electrode for all vanadium redox flow batteries (VRFBs). Free-standing TiN nanowires are synthesized by a two-step process, in which TiO2 nanowires are first grown onto the surface of graphite felt via a seed-assisted hydrothermal method and then converted to TiN through nitridation reaction. When applied to VRFBs, the prepared electrode enables the electrolyte utilization and energy efficiency to be 73.9% and 77.4% at a high current density of 300 mA cm-2, which are correspondingly 43.3% and 15.4% higher than that of battery assembled with a pristine electrode. More impressively, the present battery exhibits good stability and high capacity retention during the cycle test. The superior performance is ascribed to the significant improvement in the electrochemical kinetics and enlarged active sites toward V3+/V2+ redox reaction.

High-Efficiency Silicon Carbide (SiC) Converters. Delivery Order 0001: Development of High-Temperature, High-Power, High-Efficiency, High-Voltage Converters Using Silicon Carbide

DTIC Science & Technology

2004-03-01

32 Silicon Dioxide as a Mask ......................................................... 34 Silicon Nitride as a Mask...phosphorous (P), and arsenic (As) for n-type material and aluminum (Al), boron (B), beryllium (Be), gallium (Ga), oxygen (O), and scandium (Sc) for...O2 in carbon tetrafluoride (CF4), nitrogen trifluoride (NF3), and sulfur hexafluoride (SF6) were observed because these gases produce high fluorine

Efficient FEM simulation of static and free vibration behavior of single walled boron nitride nanotubes

NASA Astrophysics Data System (ADS)

Giannopoulos, Georgios I.; Kontoni, Denise-Penelope N.; Georgantzinos, Stylianos K.

2016-08-01

This paper describes the static and free vibration behavior of single walled boron nitride nanotubes using a structural mechanics based finite element method. First, depending on the type of nanotube under investigation, its three dimensional nanostructure is developed according to the well-known corresponding positions of boron and nitride atoms as well as boron nitride bonds. Then, appropriate point masses are assigned to the atomic positions of the developed space frame. Next, these point masses are suitably interconnected with two-noded, linear, spring-like, finite elements. In order to simulate effectively the interactions observed between boron and nitride atoms within the nanotube, appropriate potential energy functions are introduced for these finite elements. In this manner, various atomistic models for both armchair and zigzag nanotubes with different aspect ratios are numerically analyzed and their effective elastic modulus as well as their natural frequencies and corresponding mode shapes are obtained. Regarding the free vibration analysis, the computed results reveal bending, breathing and axial modes of vibration depending on the nanotube size and chirality as well as the applied boundary support conditions. The longitudinal stiffness of the boron nitride nanotubes is found also sensitive to their geometric characteristics.

Proposal for a room-temperature diamond maser

PubMed Central

Jin, Liang; Pfender, Matthias; Aslam, Nabeel; Neumann, Philipp; Yang, Sen; Wrachtrup, Jörg; Liu, Ren-Bao

2015-01-01

The application of masers is limited by its demanding working conditions (high vacuum or low temperature). A room-temperature solid-state maser is highly desirable, but the lifetimes of emitters (electron spins) in solids at room temperature are usually too short (∼ns) for population inversion. Masing from pentacene spins in p-terphenyl crystals, which have a long spin lifetime (∼0.1 ms), has been demonstrated. This maser, however, operates only in the pulsed mode. Here we propose a room-temperature maser based on nitrogen-vacancy centres in diamond, which features the longest known solid-state spin lifetime (∼5 ms) at room temperature, high optical pumping efficiency (∼106 s−1) and material stability. Our numerical simulation demonstrates that a maser with a coherence time of approximately minutes is feasible under readily accessible conditions (cavity Q-factor ∼5 × 104, diamond size ∼3 × 3 × 0.5 mm3 and pump power <10 W). A room-temperature diamond maser may facilitate a broad range of microwave technologies. PMID:26394758

Cubic nitride templates

DOEpatents

Burrell, Anthony K; McCleskey, Thomas Mark; Jia, Quanxi; Mueller, Alexander H; Luo, Hongmei

2013-04-30

A polymer-assisted deposition process for deposition of epitaxial cubic metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be used as templates for the development of high quality cubic GaN based electronic devices.

ARO 1.2: Solid Mechanics: Augmented Finite Element Method for High-Fidelity Analysis of Structural Composites

DTIC Science & Technology

2017-10-03

Physics of Solids, 78 (314-332). 2014. 6. C . X. Zhang, J . Z. Song, Q. D. Yang, “Periodic buckling patterns of graphene/hexagonal boron nitride...Mechanics, 139 (78-97), 2015. 9. Y. C . Gu, J . Jung, Q. D. Yang, and W. Q. Chen, “A New Stabilizing Method for Numerical Analyses with Severe...Local and Global Instability”, ASME Journal of Applied Mechanics, 82 (101010-1, -12), 2015 10. J . Jung, B. C . Do, and Q. D. Yang, “A-FEM for Arbitrary

Toward ambient temperature operation with all-solid-state lithium metal batteries with a sp3 boron-based solid single ion conducting polymer electrolyte

NASA Astrophysics Data System (ADS)

Zhang, Yunfeng; Cai, Weiwei; Rohan, Rupesh; Pan, Meize; Liu, Yuan; Liu, Xupo; Li, Cuicui; Sun, Yubao; Cheng, Hansong

2016-02-01

The ionic conductivity decay problem of poly(ethylene oxide) (PEO)-based solid polymer electrolytes (SPEs) when increase the lithium salt of the SPEs up to high concentration is here functionally overcome by the incorporation of a charge delocalized sp3 boron based single ion conducting polymer electrolyte (SIPE) with poly(ethylene oxide) to fabricate solid-state sp3 boron based SIPE membranes (S-BSMs). By characterizations, particularly differential scanning calorimeter (DSC) and ionic conductivity studies, the fabricated S-BSMs showed decreased melting points and increased ionic conductivity as steadily increase the content of sp3 boron based SIPE, which significantly improved the low temperature performance of the all-solid-state lithium batteries. The fabricated Li | S-BSMs | LiFePO4 cells exhibit highly electrochemical stability and excellent cycling at temperature below melting point of PEO, which has never been reported so far for SIPEs based all-solid-state lithium batteries.

Radio Frequency Plasma Synthesis of Boron Nitride Nanotubes (BNNTs) for Structural Applications: Part I

NASA Technical Reports Server (NTRS)

Hales, Stephen J.; Alexa, Joel A.; Jensen, Brian J.; Thomsen, Donald L.

2016-01-01

It is evident that nanotubes, such as carbon, boron nitride and even silicon, offer great potential for many aerospace applications. The opportunity exists to harness the extremely high strength and stiffness exhibited by high-purity, low-defect nanotubes in structural materials. Even though the technology associated with carbon nanotube (CNT) development is mature, the mechanical property benefits have yet to be fully realized. Boron nitride nanotubes (BNNTs) offer similar structural benefits, but exhibit superior chemical and thermal stability. A broader range of potential structural applications results, particularly as reinforcing agents for metal- and ceramic- based composites. However, synthesis of BNNTs is more challenging than CNTs mainly because of the higher processing temperatures required, and mass production techniques have yet to emerge. A promising technique is radio frequency plasma spray (RFPS), which is an inductively coupled, very high temperature process. The lack of electrodes and the self- contained, inert gas environment lend themselves to an ultraclean product. It is the aim of this White Paper to survey the state of the art with regard to nano-material production by analyzing the pros and cons of existing methods. The intention is to combine the best concepts and apply the NASA Langley Research Center (LaRC) RFPS facility to reliably synthesize large quantities of consistent, high-purity BNNTs.

Hybrid fibers made of molybdenum disulfide, reduced graphene oxide, and multi-walled carbon nanotubes for solid-state, flexible, asymmetric supercapacitors.

PubMed

Sun, Gengzhi; Zhang, Xiao; Lin, Rongzhou; Yang, Jian; Zhang, Hua; Chen, Peng

2015-04-07

One of challenges existing in fiber-based supercapacitors is how to achieve high energy density without compromising their rate stability. Owing to their unique physical, electronic, and electrochemical properties, two-dimensional (2D) nanomaterials, e.g., molybdenum disulfide (MoS2 ) and graphene, have attracted increasing research interest and been utilized as electrode materials in energy-related applications. Herein, by incorporating MoS2 and reduced graphene oxide (rGO) nanosheets into a well-aligned multi-walled carbon nanotube (MWCNT) sheet followed by twisting, MoS2 -rGO/MWCNT and rGO/MWCNT fibers are fabricated, which can be used as the anode and cathode, respectively, for solid-state, flexible, asymmetric supercapacitors. This fiber-based asymmetric supercapacitor can operate in a wide potential window of 1.4 V with high Coulombic efficiency, good rate and cycling stability, and improved energy density. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A broadband chip-scale optical frequency synthesizer at 2.7 × 10−16 relative uncertainty

PubMed Central

Huang, Shu-Wei; Yang, Jinghui; Yu, Mingbin; McGuyer, Bart H.; Kwong, Dim-Lee; Zelevinsky, Tanya; Wong, Chee Wei

2016-01-01

Optical frequency combs—coherent light sources that connect optical frequencies with microwave oscillations—have become the enabling tool for precision spectroscopy, optical clockwork, and attosecond physics over the past decades. Current benchmark systems are self-referenced femtosecond mode-locked lasers, but Kerr nonlinear dynamics in high-Q solid-state microresonators has recently demonstrated promising features as alternative platforms. The advance not only fosters studies of chip-scale frequency metrology but also extends the realm of optical frequency combs. We report the full stabilization of chip-scale optical frequency combs. The microcomb’s two degrees of freedom, one of the comb lines and the native 18-GHz comb spacing, are simultaneously phase-locked to known optical and microwave references. Active comb spacing stabilization improves long-term stability by six orders of magnitude, reaching a record instrument-limited residual instability of 3.6mHz/τ. Comparing 46 nitride frequency comb lines with a fiber laser frequency comb, we demonstrate the unprecedented microcomb tooth-to-tooth relative frequency uncertainty down to 50 mHz and 2.7 × 10−16, heralding novel solid-state applications in precision spectroscopy, coherent communications, and astronomical spectrography. PMID:27152341

300 mW of coherent light at 488 nm using a generic approach

NASA Astrophysics Data System (ADS)

Karamehmedović, Emir; Pedersen, Christian; Andersen, Martin T.; Tidemand-Lichtenberg, Peter

2008-02-01

We present a generic approach for efficient generation of CW light with a predetermined wavelength within the visible or UV spectrum. Based on sum-frequency generation (SFG), the circulating intra-cavity field of a high-finesse diode pumped CW solid-state laser (DPSSL) and the output from a tapered, single-frequency external cavity diode laser (ECDL) are mixed inside a 10 mm periodically poled KTP crstal (pp-KTP). The pp-KTP is situated inside the DPSSL cavity to enhance conversion efficiency of the nonlinear mixing process. This approach combines different solid state technologies; the tuneability of ECDLs, the high intra-cavity filed of DPSSLs and flexible quasi phase matching in pp-tapered ECDL with a center wavelength of 766 nm in combination with a high finesse Nd:YVo4 laser at 1342 nm. Up to 308 mW of light at 488nm was measured in our experiments. The conversion of te ECDL beam was up to 47% after it was transmitted through a PM fiber, and up to 32% without fiber coupling. Replacing the seed laser and the nonlinear crystal makes it possible to generate light at virtually any desired wavelength withing the visible spectrum.

Synthesis of Spherical Carbon Nitride-Based Polymer Composites by Continuous Aerosol-Photopolymerization with Efficient Light Harvesting.

PubMed

Poostforooshan, Jalal; Badiei, Alireza; Kolahdouz, Mohammadreza; Weber, Alfred P

2016-08-24

Here we report a novel, facile, and sustainable approach for the preparation of spherical submicrometer carbon nitride-based polymer composites by a continuous aerosol-photopolymerization process. In this regard, spherical mesoporous carbon nitride (SMCN) nanoparticles were initially prepared via a nanocasting approach using spray-drying synthesized spherical mesoporous silica (SMS) nanoparticles as hard templates. In addition to experimental characterization, the effect of porosity on the light absorption enhancement and consequently the generation rate of electron-hole pairs inside the SMCN was simulated using a three-dimensional finite difference time-domain (FDTD) method. To produce the carbon nitride-based polymer composite, SMCN nanoparticles exhibit excellent performance in photopolymerization of butyl acrylate (PBuA) monomer in the presence of n-methyldiethanolamine (MDEA) as a co-initiator in a continuous aerosol-based process. In this one-pot synthesis, SMCN nanoparticles act not only as photoinitiators but at the same time as fillers and templates. The average aerosol residence time in the photoreactor is about 90 s. The presented aerosol-photopolymerization process avoids the need for solvent and surfactant, operates at room temperature, and, more importantly, is suitable to produce the spherical composite with hydrophobic polymers. Furthermore, we simulated the condition of SMCN nanoparticles during illumination in the gas phase process, which can freely rotate. The results demonstrated that the hole (h(+)) density is almost equally distributed in the whole part of the SMCN nanoparticles due to their rotation, leading to efficient light harvesting and more homogeneous photoreaction. The combination of the outstanding features of environmentally friendly SMCN, photopolymerization, and aerosol processing might open new avenues, especially in green chemistry, to produce novel polymer composites with multifunctional properties.

Proton irradiation effects on gallium nitride-based devices

NASA Astrophysics Data System (ADS)

Karmarkar, Aditya P.

Proton radiation effects on state-of-the-art gallium nitride-based devices were studied using Schottky diodes and high electron-mobility transistors. The device degradation was studied over a wide range of proton fluences. This study allowed for a correlation between proton irradiation effects between different types of devices and enhanced the understanding of the mechanisms responsible for radiation damage in GaN-based devices. Proton irradiation causes reduced carrier concentration and increased series resistance and ideality factor in Schottky diodes. 1.0-MeV protons cause greater degradation than 1.8-MeV protons because of their higher non-ionizing energy loss. The displacement damage in Schottky diodes recovers during annealing. High electron-mobility transistors exhibit extremely high radiation tolerance, continuing to perform up to a fluence of ˜1014 cm-2 of 1.8-MeV protons. Proton irradiation creates defect complexes in the thin-film structure. Decreased sheet carrier mobility due to increased carrier scattering and decreased sheet carrier density due to carrier removal by the defect centers are the primary damage mechanisms. Interface disorder at either the Schottky or the Ohmic contact plays a relatively unimportant part in overall device degradation in both Schottky diodes and high electron-mobility transistors.

Silver Nanowire Transparent Conductive Electrodes for High-Efficiency III-Nitride Light-Emitting Diodes

PubMed Central

Oh, Munsik; Jin, Won-Yong; Jun Jeong, Hyeon; Jeong, Mun Seok; Kang, Jae-Wook; Kim, Hyunsoo

2015-01-01

Silver nanowires (AgNWs) have been successfully demonstrated to function as next-generation transparent conductive electrodes (TCEs) in organic semiconductor devices owing to their figures of merit, including high optical transmittance, low sheet resistance, flexibility, and low-cost processing. In this article, high-quality, solution-processed AgNWs with an excellent optical transmittance of 96.5% at 450 nm and a low sheet resistance of 11.7 Ω/sq were demonstrated as TCEs in inorganic III-nitride LEDs. The transmission line model applied to the AgNW contact to p-GaN showed that near ohmic contact with a specific contact resistance of ~10−3 Ωcm2 was obtained. The contact resistance had a strong bias-voltage (or current-density) dependence: namely, field-enhanced ohmic contact. LEDs fabricated with AgNW electrodes exhibited a 56% reduction in series resistance, 56.5% brighter output power, a 67.5% reduction in efficiency droop, and a approximately 30% longer current spreading length compared to LEDs fabricated with reference TCEs. In addition to the cost reduction, the observed improvements in device performance suggest that the AgNWs are promising for application as next-generation TCEs, to realise brighter, larger-area, cost-competitive inorganic III-nitride light emitters. PMID:26333768

Growing large columnar grains of CH3NH3PbI3 using the solid-state reaction method enhanced by less-crystallized nanoporous PbI2 films

NASA Astrophysics Data System (ADS)

Zheng, Huifeng; Wang, Weiqi; Liu, Yangqiao; Sun, Jing

2017-03-01

Compact, pinhole-free and PbI2-free perovskite films, are desirable for high-performance perovskite solar cells (PSCs), especially if large columnar grains are obtained in which the adverse effects of grain boundaries will be minimized. However, the conventional solid-state reaction methods, originated from the two-step method, failed to grow columnar grains of CH3NH3PbI3 in a facile way. Here, we demonstrate a strategy for growing large columnar grains of CH3NH3PbI3, by less-crystallized nanoporous PbI2 (ln-PbI2) film enhanced solid-state reaction method. We demonstrated columnar grains were obtainable only when ln-PbI2 films were applied. Therefore, the replacement of compact PbI2 by ln-PbI2 in the solid-sate reaction, leads to higher power conversion efficiency, better reproducibility, better stability and less hysteresis. Furthermore, by systematically investigating the effects of annealing temperature and duration, we found that an annealing temperature ≥120 °C was also critical for growing columnar grains. With the optimal process, a champion efficiency of 16.4% was obtained and the average efficiency reached 14.2%. Finally, the mechanism of growing columnar grains was investigated, in which a VPb″ -assisted hooping model was proposed. This work reveals the origins of grain growth in the solid-state reaction method, which will contribute to preparing high quality perovskite films with much larger columnar grains.

Bibliography of Soviet Laser Developments, Number 48 July-August 1980.

DTIC Science & Technology

1981-07-01

equilibrium and thermodvnamic properties of alloys of erbium with tellurium in the solid state. Moskovskiv Cli. Vestnik. Khimiva, no. 4, 1980, 339-344. 3...processes in a gamma laser. Sb 12, 147-163. (RZhF, 7/80, 7DI140) 292. Vysotskiy, V.I., and R.N. Kuz’min (51,2). Focusing and channeling of neutrons and...metal-nitride- oxide - semiconductor structure and a laser CRT. KE, no. 7, 1980, 1585-1588. 55 359. Soroka, S.1., and S.I. Ratnikov (0). Hologram

High-efficiency and low-loss gallium nitride dielectric metasurfaces for nanophotonics at visible wavelengths

NASA Astrophysics Data System (ADS)

Emani, Naresh Kumar; Khaidarov, Egor; Paniagua-Domínguez, Ramón; Fu, Yuan Hsing; Valuckas, Vytautas; Lu, Shunpeng; Zhang, Xueliang; Tan, Swee Tiam; Demir, Hilmi Volkan; Kuznetsov, Arseniy I.

2017-11-01

The dielectric nanophotonics research community is currently exploring transparent material platforms (e.g., TiO2, Si3N4, and GaP) to realize compact high efficiency optical devices at visible wavelengths. Efficient visible-light operation is key to integrating atomic quantum systems for future quantum computing. Gallium nitride (GaN), a III-V semiconductor which is highly transparent at visible wavelengths, is a promising material choice for active, nonlinear, and quantum nanophotonic applications. Here, we present the design and experimental realization of high efficiency beam deflecting and polarization beam splitting metasurfaces consisting of GaN nanostructures etched on the GaN epitaxial substrate itself. We demonstrate a polarization insensitive beam deflecting metasurface with 64% and 90% absolute and relative efficiencies. Further, a polarization beam splitter with an extinction ratio of 8.6/1 (6.2/1) and a transmission of 73% (67%) for p-polarization (s-polarization) is implemented to demonstrate the broad functionality that can be realized on this platform. The metasurfaces in our work exhibit a broadband response in the blue wavelength range of 430-470 nm. This nanophotonic platform of GaN shows the way to off- and on-chip nonlinear and quantum photonic devices working efficiently at blue emission wavelengths common to many atomic quantum emitters such as Ca+ and Sr+ ions.

An ultra-high gain and efficient amplifier based on Raman amplification in plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vieux, G.; Cipiccia, S.; Grant, D. W.

Raman amplification arising from the excitation of a density echelon in plasma could lead to amplifiers that significantly exceed current power limits of conventional laser media. Here we show that 1–100 J pump pulses can amplify picojoule seed pulses to nearly joule level. The extremely high gain also leads to significant amplification of backscattered radiation from “noise”, arising from stochastic plasma fluctuations that competes with externally injected seed pulses, which are amplified to similar levels at the highest pump energies. The pump energy is scattered into the seed at an oblique angle with 14 J sr -1, and net gainsmore » of more than eight orders of magnitude. The maximum gain coefficient, of 180 cm -1, exceeds high-power solid-state amplifying media by orders of magnitude. The observation of a minimum of 640 J sr -1 directly backscattered from noise, corresponding to ≈10% of the pump energy in the observation solid angle, implies potential overall efficiencies greater than 10%.« less

An ultra-high gain and efficient amplifier based on Raman amplification in plasma

DOE PAGES

Vieux, G.; Cipiccia, S.; Grant, D. W.; ...

2017-05-25

Raman amplification arising from the excitation of a density echelon in plasma could lead to amplifiers that significantly exceed current power limits of conventional laser media. Here we show that 1–100 J pump pulses can amplify picojoule seed pulses to nearly joule level. The extremely high gain also leads to significant amplification of backscattered radiation from “noise”, arising from stochastic plasma fluctuations that competes with externally injected seed pulses, which are amplified to similar levels at the highest pump energies. The pump energy is scattered into the seed at an oblique angle with 14 J sr -1, and net gainsmore » of more than eight orders of magnitude. The maximum gain coefficient, of 180 cm -1, exceeds high-power solid-state amplifying media by orders of magnitude. The observation of a minimum of 640 J sr -1 directly backscattered from noise, corresponding to ≈10% of the pump energy in the observation solid angle, implies potential overall efficiencies greater than 10%.« less

High Kinetic Energy Penetrator Shielding and High Wear Resistance Materials Fabricated with Boron Nitride Nanotubes (BNNTS) and BNNT Polymer Composites

NASA Technical Reports Server (NTRS)

Kang, Jin Ho (Inventor); Sauti, Godfrey (Inventor); Smith, Michael W. (Inventor); Jordan, Kevin C. (Inventor); Park, Cheol (Inventor); Bryant, Robert George (Inventor); Lowther, Sharon E. (Inventor)

2015-01-01

Boron nitride nanotubes (BNNTs), boron nitride nanoparticles (BNNPs), carbon nanotubes (CNTs), graphites, or combinations, are incorporated into matrices of polymer, ceramic or metals. Fibers, yarns, and woven or nonwoven mats of BNNTs are used as toughening layers in penetration resistant materials to maximize energy absorption and/or high hardness layers to rebound or deform penetrators. They can be also used as reinforcing inclusions combining with other polymer matrices to create composite layers like typical reinforcing fibers such as Kevlar.RTM., Spectra.RTM., ceramics and metals. Enhanced wear resistance and usage time are achieved by adding boron nitride nanomaterials, increasing hardness and toughness. Such materials can be used in high temperature environments since the oxidation temperature of BNNTs exceeds 800.degree. C. in air. Boron nitride based composites are useful as strong structural materials for anti-micrometeorite layers for spacecraft and space suits, ultra strong tethers, protective gear, vehicles, helmets, shields and safety suits/helmets for industry.

All solid-state SBS phase conjugate mirror

DOEpatents

Dane, Clifford B.; Hackel, Lloyd A.

1999-01-01

A stimulated Brillouin scattering (SBS) phase conjugate laser mirror uses a solid-state nonlinear gain medium instead of the conventional liquid or high pressure gas medium. The concept has been effectively demonstrated using common optical-grade fused silica. An energy threshold of 2.5 mJ and a slope efficiency of over 90% were achieved, resulting in an overall energy reflectivity of >80% for 15 ns, 1 um laser pulses. The use of solid-state materials is enabled by a multi-pass resonant architecture which suppresses transient fluctuations that would otherwise result in damage to the SBS medium. This all solid state phase conjugator is safer, more reliable, and more easily manufactured than prior art designs. It allows nonlinear wavefront correction to be implemented in industrial and defense laser systems whose operating environments would preclude the introduction of potentially hazardous liquids or high pressure gases.

All solid-state SBS phase conjugate mirror

DOEpatents

Dane, C.B.; Hackel, L.A.

1999-03-09

A stimulated Brillouin scattering (SBS) phase conjugate laser mirror uses a solid-state nonlinear gain medium instead of the conventional liquid or high pressure gas medium. The concept has been effectively demonstrated using common optical-grade fused silica. An energy threshold of 2.5 mJ and a slope efficiency of over 90% were achieved, resulting in an overall energy reflectivity of >80% for 15 ns, 1 um laser pulses. The use of solid-state materials is enabled by a multi-pass resonant architecture which suppresses transient fluctuations that would otherwise result in damage to the SBS medium. This all solid state phase conjugator is safer, more reliable, and more easily manufactured than prior art designs. It allows nonlinear wavefront correction to be implemented in industrial and defense laser systems whose operating environments would preclude the introduction of potentially hazardous liquids or high pressure gases. 8 figs.

High Power High Efficiency Ka-Band Power Combiners for Solid-State Devices

NASA Technical Reports Server (NTRS)

Freeman, Jon C.; Wintucky, Edwin G.; Chevalier, Christine T.

2006-01-01

Wide-band power combining units for Ka-band are simulated for use as MMIC amplifier applications. Short-slot couplers as well as magic-tees are the basic elements for the combiners. Wide bandwidth (5 GHz) and low insertion (approx.0.2 dB) and high combining efficiencies (approx.90 percent) are obtained.

Active frequency matching in stimulated Brillouin amplification for production of a 2.4  J, 200  ps laser pulse.

PubMed

Yuan, Hang; Wang, Yulei; Lu, Zhiwei; Zheng, Zhenxing

2018-02-01

A frequency matching Brillouin amplification in high-power solid-state laser systems is proposed. The energy extraction efficiency could be maintained at a high level in a non-collinear Brillouin amplification structure using an exact Stokes frequency shift. Laser pulses having a width of 200 ps and energy of 2.4 J were produced. This method can be used to transfer energy from a long pulse to a short pulse through a high-power solid-state laser system.

Design and performance study of a DC-DC flyback converter based on wide bandgap power devices for photovoltaic applications

NASA Astrophysics Data System (ADS)

Alharbi, Salah S.; Alharbi, Saleh S.; Al-bayati, Ali M. S.; Matin, Mohammad

2017-08-01

This paper presents a high-performance dc-dc flyback converter design based on wide bandgap (WBG) semiconductor devices for photovoltaic (PV) applications. Two different power devices, a gallium nitride (GaN)-transistor and a silicon (Si)-MOSFET, are implemented individually in the flyback converter to examine their impact on converter performance. The total power loss of the converter with different power devices is analyzed for various switching frequencies. Converter efficiency is evaluated at different switching frequencies, input voltages, and output power levels. The results reveal that the converter with the GaN-transistor has lower total power loss and better efficiency compared to the converter with the conventional Si-MOSFET.

Solid state nuclear magnetic resonance studies of prion peptides and proteins

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heller, Jonathan

1997-08-01

High-resolution structural studies using x-ray diffraction and solution nuclear magnetic resonance (NMR) are not feasible for proteins of low volubility and high tendency to aggregate. Solid state NMR (SSNMR) is in principle capable of providing structural information in such systems, however to do this efficiently and accurately, further SSNMR tools must be developed This dissertation describes the development of three new methods and their application to a biological system of interest, the priori protein (PrP).

High Efficiency Ka-Band Solid State Power Amplifier Waveguide Power Combiner

NASA Technical Reports Server (NTRS)

Wintucky, Edwin G.; Simons, Rainee N.; Chevalier, Christine T.; Freeman, Jon C.

2010-01-01

A novel Ka-band high efficiency asymmetric waveguide four-port combiner for coherent combining of two Monolithic Microwave Integrated Circuit (MMIC) Solid State Power Amplifiers (SSPAs) having unequal outputs has been successfully designed, fabricated and characterized over the NASA deep space frequency band from 31.8 to 32.3 GHz. The measured combiner efficiency is greater than 90 percent, the return loss greater than 18 dB and input port isolation greater than 22 dB. The manufactured combiner was designed for an input power ratio of 2:1 but can be custom designed for any arbitrary power ratio. Applications considered are NASA s space communications systems needing 6 to 10 W of radio frequency (RF) power. This Technical Memorandum (TM) is an expanded version of the article recently published in Institute of Engineering and Technology (IET) Electronics Letters.

Quasi-CW Laser Diode Bar Life Tests

NASA Technical Reports Server (NTRS)

Stephen, Mark A.; Krainak, Michael A.; Dallas, Joseph L.

1997-01-01

NASA's Goddard Space Flight Center is developing technology for satellite-based, high peak power, LIDAR transmitters requiring 3-5 years of reliable operation. Semi-conductor laser diodes provide high efficiency pumping of solid state lasers with the promise of long-lived, reliable operation. 100-watt quasi- CW laser diode bars have been baselined for the next generation laser altimeters. Multi-billion shot lifetimes are required. The authors have monitored the performance of several diodes for billions of shots and investigated operational modes for improving diode lifetime.

Solid-state Yb : YAG amplifier pumped by a single-mode laser at 920 nm

NASA Astrophysics Data System (ADS)

Obronov, I. V.; Demkin, A. S.; Myasnikov, D. V.

2018-03-01

An optical amplifier scheme for ultrashort 1030-nm pulses is proposed based on an Yb : YAG crystal with axial pumping by a transverse single-mode laser at a wavelength of 920 nm. A small-signal gain up to 40 dB per pass with a high output beam quality is demonstrated. The maximum average power is 14 W with a slope efficiency exceeding 50%.

Bio-optimized energy transfer in densely packed fluorescent protein enables near-maximal luminescence and solid-state lasers.

PubMed

Gather, Malte C; Yun, Seok Hyun

2014-12-08

Bioluminescent organisms are likely to have an evolutionary drive towards high radiance. As such, bio-optimized materials derived from them hold great promise for photonic applications. Here, we show that biologically produced fluorescent proteins retain their high brightness even at the maximum density in solid state through a special molecular structure that provides optimal balance between high protein concentration and low resonance energy transfer self-quenching. Dried films of green fluorescent protein show low fluorescence quenching (-7 dB) and support strong optical amplification (gnet=22 cm(-1); 96 dB cm(-1)). Using these properties, we demonstrate vertical cavity surface emitting micro-lasers with low threshold (<100 pJ, outperforming organic semiconductor lasers) and self-assembled all-protein ring lasers. Moreover, solid-state blends of different proteins support efficient Förster resonance energy transfer, with sensitivity to intermolecular distance thus allowing all-optical sensing. The design of fluorescent proteins may be exploited for bio-inspired solid-state luminescent molecules or nanoparticles.

Bio-optimized energy transfer in densely packed fluorescent protein enables near-maximal luminescence and solid-state lasers

PubMed Central

Gather, Malte C.; Yun, Seok Hyun

2015-01-01

Bioluminescent organisms are likely to have an evolutionary drive towards high radiance. As such, bio-optimized materials derived from them hold great promise for photonic applications. Here we show that biologically produced fluorescent proteins retain their high brightness even at the maximum density in solid state through a special molecular structure that provides optimal balance between high protein concentration and low resonance energy transfer self-quenching. Dried films of green fluorescent protein show low fluorescence quenching (−7 dB) and support strong optical amplification (gnet = 22 cm−1; 96 dB cm−1). Using these properties, we demonstrate vertical cavity surface emitting micro-lasers with low threshold (<100 pJ, outperforming organic semiconductor lasers) and self-assembled all-protein ring lasers. Moreover, solid-state blends of different proteins support efficient Förster resonance energy transfer, with sensitivity to intermolecular distance thus allowing all-optical sensing. The design of fluorescent proteins may be exploited for bio-inspired solid-state luminescent molecules or nanoparticles. PMID:25483850

Progress and prospect on failure mechanisms of solid-state lithium batteries

NASA Astrophysics Data System (ADS)

Ma, Jun; Chen, Bingbing; Wang, Longlong; Cui, Guanglei

2018-07-01

By replacing traditional liquid organic electrolyte with solid-state electrolyte, the solid-state lithium batteries powerfully come back to the energy storage field due to their eminent safety and energy density. In recent years, a variety of solid-state lithium batteries based on excellent solid-state electrolytes are developed. However, the performance degradation of solid-state lithium batteries during cycling and storing is still a serious challenge for practical application. Therefore, this review summarizes the research progress of solid-state lithium batteries from the perspectives of failure phenomena and failure mechanisms. Additionally, the development of methodologies on studying the failure mechanisms of solid-state lithium batteries is also reviewed. Moreover, some perspectives on the remaining questions for understanding the failure behaviors and achieving long cycle life, high safety and high energy density solid-state lithium batteries are presented. This review will help researchers to recognize the status of solid-state lithium batteries objectively and attract much more research interest in conquering the failure issues of solid-state lithium batteries.

All-solid-state flexible microsupercapacitors based on reduced graphene oxide/multi-walled carbon nanotube composite electrodes

NASA Astrophysics Data System (ADS)

Mao, Xiling; Xu, Jianhua; He, Xin; Yang, Wenyao; Yang, Yajie; Xu, Lu; Zhao, Yuetao; Zhou, Yujiu

2018-03-01

All-solid-state flexible microsupercapacitors have been intensely investigated in order to meet the rapidly growing demands for portable microelectronic devices. Herein, we demonstrate a facile, readily scalable and cost-effective laser induction process for preparing reduced graphene oxide/multi-walled carbon nanotube composite, which can be used as the interdigital electrodes in microsupercapacitors. The obtained composite exhibits high volumetric capacitance about 49.35 F cm-3, which is nearly 5 times higher than that of the pristine reduced graphene oxide film in aqueous 1.0 M H2SO4 solution (measured at a current density of 5 A cm-3 in a three-electrode testing). Additionally, an all-solid-state flexible microsupercapacitor employing these composite electrodes with PVA/H3PO4 gel electrolyte delivers high volumetric energy density of 6.47 mWh cm-3 at 10 mW cm-3 under the current density of 20 mA cm-3 as well as achieve excellent cycling stability retaining 88.6% of its initial value and outstanding coulombic efficiency after 10,000 cycles. Furthermore, the microsupercapacitors array connected in series/parallel can be easily adjusted to achieve the demands in practical applications. Therefore, this work brings a promising new candidate of prepare technologies for all-solid-state flexible microsupercapacitors as miniaturized power sources used in the portable and wearable electronics.

A 32-GHz solid-state power amplifier for deep space communications

NASA Technical Reports Server (NTRS)

Wamhof, P. D.; Rascoe, D. L.; Lee, K. A.; Lansing, F. S.

1994-01-01

A 1.5-W solid-state power amplifier (SSPA) has been demonstrated as part of an effort to develop and evaluate state-of-the-art transmitter and receiver components at 32 and 35 GHz for future deep space missions. Output power and efficiency measurements for a monolithic millimeter-wave integrated circuit (MMIC)-based SSPA are reported. Technical design details for the various modules and a thermal analysis are discussed, as well as future plans.

Evaluation of cutting efficiency of ultrasonic tips used in orthograde endodontic treatment.

PubMed

Lin, Yu-Heng; Mickel, André K; Jones, Jefferson J; Montagnese, Thomas A; González, Alvaro F

2006-04-01

The purpose of the present study was to evaluate the cutting efficiency of the three different ultrasonic tips for orthograde endodontic treatment: stainless steel, zirconium nitride-coated, and diamond-coated tips. An ultrasonic handpiece was mounted on a custom-made automated balance, and each tip repeatedly penetrated dental stone blocks to a depth of 3 mm for 10 times. The amount of time taken to penetrate 3 mm of stone was measured. The diamond-coated tips showed significantly greater cutting efficiency than either stainless steel tips or zirconium-nitride coated tips. The stainless steel tips showed initial better cutting efficiency, but over time , there is no significant difference between the cutting efficiency of the stainless steel tips and the zirconium nitride coated tips. The diamond coated tips were the only group that showed breakage in this study.

In operando spectroscopic studies of high temperature electrocatalysts used for energy conversion

NASA Astrophysics Data System (ADS)

McIntyre, Melissa Dawn

Solid-state electrochemical cells are efficient energy conversion devices that can be used for clean energy production or for removing air pollutants from exhaust gas emitted by combustion processes. For example, solid oxide fuel cells generate electricity with low emissions from a variety of fuel sources; solid oxide electrolysis cells produce zero-emission H2 fuel; and solid-state DeNOx cells remove NOx gases from diesel exhaust. In order to maintain high conversion efficiencies, these systems typically operate at temperatures ≥ 500°C. The high operating temperatures, however, accelerate chemical and mechanical cell degradation. To improve device durability, a mechanistic understanding of the surface chemistry occurring at the cell electrodes (anode and cathode) is critical in terms of refining cell design, material selection and operation protocols. The studies presented herein utilized in operando Raman spectroscopy coupled with electrochemical measurements to directly correlate molecular/material changes with device performance in solid oxide cells under various operating conditions. Because excessive carbon accumulation with carbon-based fuels destroys anodes, the first three studies investigated strategies for mitigating carbon accumulation on Ni cermet anodes. Results from the first two studies showed that low amounts of solid carbon stabilized the electrical output and improved performance of solid oxide fuel cells operating with syn-gas (H 2/CO fuel mixture). The third study revealed that infiltrating anodes with Sn or BaO suppressed carbon accumulation with CH4 fuel and that H2O was the most effective reforming agent facilitating carbon removal. The last two studies explored how secondary phases formed in traditional solid oxide cell materials doped with metal oxides improve electrochemical performance. Results from the fourth study suggest that the mixed ion-electron conducting Zr5Ti7O24 secondary phase can expand the electrochemically active region and increase electrochemical activity in cermet electrodes. The final study of lanthanum strontium manganite cathodes infiltrated with BaO revealed the reversible decomposition/formation of a Ba3Mn2O8 secondary phase under applied potentials and proposed mechanisms for the enhanced electrocatalytic oxygen reduction associated with this compound under polarizing conditions. Collectively, these studies demonstrate that mechanistic information obtained from molecular/material specific techniques coupled with electrochemical measurements can be used to help optimize materials and operating conditions in solid-state electrochemical cells.

Reactive magnetron cosputtering of hard and conductive ternary nitride thin films: Ti-Zr-N and Ti-Ta-N

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abadias, G.; Koutsokeras, L. E.; Dub, S. N.

2010-07-15

Ternary transition metal nitride thin films, with thickness up to 300 nm, were deposited by dc reactive magnetron cosputtering in Ar-N{sub 2} plasma discharges at 300 deg. C on Si substrates. Two systems were comparatively studied, Ti-Zr-N and Ti-Ta-N, as representative of isostructural and nonisostructural prototypes, with the aim of characterizing their structural, mechanical, and electrical properties. While phase-separated TiN-ZrN and TiN-TaN are the bulk equilibrium states, Ti{sub 1-x}Zr{sub x}N and Ti{sub 1-y}Ta{sub y}N solid solutions with the Na-Cl (B1-type) structure could be stabilized in a large compositional range (up to x=1 and y=0.75, respectively). Substituting Ti atoms by eithermore » Zr or Ta atoms led to significant changes in film texture, microstructure, grain size, and surface morphology, as evidenced by x-ray diffraction, x-ray reflectivity, and scanning electron and atomic force microscopies. The ternary Ti{sub 1-y}Ta{sub y}N films exhibited superior mechanical properties to Ti{sub 1-x}Zr{sub x}N films as well as binary compounds, with hardness as high as 42 GPa for y=0.69. All films were metallic, the lowest electrical resistivity {rho}{approx}65 {mu}{Omega} cm being obtained for pure ZrN, while for Ti{sub 1-y}Ta{sub y}N films a minimum was observed at y{approx}0.3. The evolution of the different film properties is discussed based on microstructrural investigations.« less

Gallium nitride photocathodes for imaging photon counters

NASA Astrophysics Data System (ADS)

Siegmund, Oswald H. W.; Hull, Jeffrey S.; Tremsin, Anton S.; McPhate, Jason B.; Dabiran, Amir M.

2010-07-01

Gallium nitride opaque and semitransparent photocathodes provide high ultraviolet quantum efficiencies from 100 nm to a long wavelength cutoff at ~380 nm. P (Mg) doped GaN photocathode layers ~100 nm thick with a barrier layer of AlN (22 nm) on sapphire substrates also have low out of band response, and are highly robust. Opaque GaN photocathodes are relatively easy to optimize, and consistently provide high quantum efficiency (70% at 120 nm) provided the surface cleaning and activation (Cs) processes are well established. We have used two dimensional photon counting imaging microchannel plate detectors, with an active area of 25 mm diameter, to investigate the imaging characteristics of semitransparent GaN photocathodes. These can be produced with high (20%) efficiency, but the thickness and conductivity of the GaN must be carefully optimized. High spatial resolution of ~50 μm with low intrinsic background (~7 events sec-1 cm-2) and good image uniformity have been achieved. Selectively patterned deposited GaN photocathodes have also been used to allow quick diagnostics of optimization parameters. GaN photocathodes of both types show great promise for future detector applications in ultraviolet Astrophysical instruments.

Three types of solid state remote power controllers

NASA Technical Reports Server (NTRS)

Baker, D. E.

1975-01-01

Three types of solid state Remote Power Controller (RPC) circuits for 120 Vdc spacecraft distribution systems have been developed and evaluated. Both current limiting and noncurrent limiting modes of overload protection were developed and were demonstrated to be feasible. A second generation of circuits was developed which offers comparable performance with substantially less cost and complexity. Electrical efficiency for both generations is 98.5 to 99%. This paper describes various aspects of the circuit design, trade-off studies, and experimental test results. Comparisons of design parameters, component requirements, and engineering model evaluations will emphasize the high efficiency and reliability of the designs.

Obstacles and opportunities in the commercialization of the solid state electronic fluorescent lighting ballast

NASA Astrophysics Data System (ADS)

Johnson, D. R.; Marcus, A. A.; Campbell, R. S.; Sommers, P.; Skumatz, L.; Berk, B.; Petty, P.; Eschbach, C.

1981-10-01

A solid state ballast (SSB), which improves the efficiency of fluorescent lights, is described. The first generation of solid state electronic ballasts was developed and the technology was transferred to the private sector. The opportunities for rapid dissemination of this technology into the marketplace is examined. Product characteristics and their influence on the commercialization of the SSB, a description of the technology delivery system presently used by the ballast industry, an analysis of the market for SSB, and identification of some high leverage opportunities to accelerate the commercialization process are included.

Progress in efficient doping of high aluminum-containing group III-nitrides

NASA Astrophysics Data System (ADS)

Liang, Y.-H.; Towe, E.

2018-03-01

The group III-nitride (InN, GaN, and AlN) class of semiconductors has become one of two that are critical to a number of technologies in modern life—the other being silicon. Light-emitting diodes made from (In,Ga)N, for example, dominate recent innovations in general illumination and signaling. Even though the (In,Ga)N materials system is fairly well established and widely used in advanced devices, challenges continue to impede development of devices that include aluminum-containing nitride films such as (Al,Ga)N. The main difficulty is efficient doping of films with aluminum-rich compositions; the problem is particularly severe for p-type doping, which is essential for Ohmic contacts to bipolar device structures. This review briefly summarizes the fundamental issues related to p-type doping, and then discusses a number of approaches that are being pursued to resolve the doping problem or for circumventing the need for p-type doping. Finally, we discuss an approach to doping under liquid-metal-enabled growth by molecular beam epitaxy. Recent results from a number of groups appear to indicate that p-type doping of nitride films under liquid-metal-enabled growth conditions might offer a solution to the doping problem—at least for materials grown by molecular beam epitaxy.

Solar-Driven Reduction of Aqueous Protons Coupled to Selective Alcohol Oxidation with a Carbon Nitride-Molecular Ni Catalyst System.

PubMed

Kasap, Hatice; Caputo, Christine A; Martindale, Benjamin C M; Godin, Robert; Lau, Vincent Wing-Hei; Lotsch, Bettina V; Durrant, James R; Reisner, Erwin

2016-07-27

Solar water-splitting represents an important strategy toward production of the storable and renewable fuel hydrogen. The water oxidation half-reaction typically proceeds with poor efficiency and produces the unprofitable and often damaging product, O2. Herein, we demonstrate an alternative approach and couple solar H2 generation with value-added organic substrate oxidation. Solar irradiation of a cyanamide surface-functionalized melon-type carbon nitride ((NCN)CNx) and a molecular nickel(II) bis(diphosphine) H2-evolution catalyst (NiP) enabled the production of H2 with concomitant selective oxidation of benzylic alcohols to aldehydes in high yield under purely aqueous conditions, at room temperature and ambient pressure. This one-pot system maintained its activity over 24 h, generating products in 1:1 stoichiometry, separated in the gas and solution phases. The (NCN)CNx-NiP system showed an activity of 763 μmol (g CNx)(-1) h(-1) toward H2 and aldehyde production, a Ni-based turnover frequency of 76 h(-1), and an external quantum efficiency of 15% (λ = 360 ± 10 nm). This precious metal-free and nontoxic photocatalytic system displays better performance than an analogous system containing platinum instead of NiP. Transient absorption spectroscopy revealed that the photoactivity of (NCN)CNx is due to efficient substrate oxidation of the material, which outweighs possible charge recombination compared to the nonfunctionalized melon-type carbon nitride. Photoexcited (NCN)CNx in the presence of an organic substrate can accumulate ultralong-lived "trapped electrons", which allow for fuel generation in the dark. The artificial photosynthetic system thereby catalyzes a closed redox cycle showing 100% atom economy and generates two value-added products, a solar chemical, and solar fuel.

Substitution of ceramics for high temperature alloys. [advantages of using silicon carbides and silicon nitrides in gas turbine engines

NASA Technical Reports Server (NTRS)

Probst, H. B.

1978-01-01

The high temperature capability of ceramics such as silicon nitride and silicon carbide can result in turbine engines of improved efficiency. Other advantages when compared to the nickel and cobalt alloys in current use are raw material availability, lower weight, erosion/corrosion resistance, and potentially lower cost. The use of ceramics in three different sizes of gas turbine is considered; these are the large utility turbines, advanced aircraft turbines, and small automotive turbines. Special consideration, unique to each of these applications, arise when one considers substituting ceramics for high temperature alloys. The effects of material substitutions are reviewed in terms of engine performance, operating economy, and secondary effects.

A novel wild-type Saccharomyces cerevisiae strain TSH1 in scaling-up of solid-state fermentation of ethanol from sweet sorghum stalks.

PubMed

Du, Ran; Yan, Jianbin; Feng, Quanzhou; Li, Peipei; Zhang, Lei; Chang, Sandra; Li, Shizhong

2014-01-01

The rising demand for bioethanol, the most common alternative to petroleum-derived fuel used worldwide, has encouraged a feedstock shift to non-food crops to reduce the competition for resources between food and energy production. Sweet sorghum has become one of the most promising non-food energy crops because of its high output and strong adaptive ability. However, the means by which sweet sorghum stalks can be cost-effectively utilized for ethanol fermentation in large-scale industrial production and commercialization remains unclear. In this study, we identified a novel Saccharomyces cerevisiae strain, TSH1, from the soil in which sweet sorghum stalks were stored. This strain exhibited excellent ethanol fermentative capacity and ability to withstand stressful solid-state fermentation conditions. Furthermore, we gradually scaled up from a 500-mL flask to a 127-m3 rotary-drum fermenter and eventually constructed a 550-m3 rotary-drum fermentation system to establish an efficient industrial fermentation platform based on TSH1. The batch fermentations were completed in less than 20 hours, with up to 96 tons of crushed sweet sorghum stalks in the 550-m3 fermenter reaching 88% of relative theoretical ethanol yield (RTEY). These results collectively demonstrate that ethanol solid-state fermentation technology can be a highly efficient and low-cost solution for utilizing sweet sorghum, providing a feasible and economical means of developing non-food bioethanol.

A Novel Wild-Type Saccharomyces cerevisiae Strain TSH1 in Scaling-Up of Solid-State Fermentation of Ethanol from Sweet Sorghum Stalks

PubMed Central

Feng, Quanzhou; Li, Peipei; Zhang, Lei; Chang, Sandra; Li, Shizhong

2014-01-01

The rising demand for bioethanol, the most common alternative to petroleum-derived fuel used worldwide, has encouraged a feedstock shift to non-food crops to reduce the competition for resources between food and energy production. Sweet sorghum has become one of the most promising non-food energy crops because of its high output and strong adaptive ability. However, the means by which sweet sorghum stalks can be cost-effectively utilized for ethanol fermentation in large-scale industrial production and commercialization remains unclear. In this study, we identified a novel Saccharomyces cerevisiae strain, TSH1, from the soil in which sweet sorghum stalks were stored. This strain exhibited excellent ethanol fermentative capacity and ability to withstand stressful solid-state fermentation conditions. Furthermore, we gradually scaled up from a 500-mL flask to a 127-m3 rotary-drum fermenter and eventually constructed a 550-m3 rotary-drum fermentation system to establish an efficient industrial fermentation platform based on TSH1. The batch fermentations were completed in less than 20 hours, with up to 96 tons of crushed sweet sorghum stalks in the 550-m3 fermenter reaching 88% of relative theoretical ethanol yield (RTEY). These results collectively demonstrate that ethanol solid-state fermentation technology can be a highly efficient and low-cost solution for utilizing sweet sorghum, providing a feasible and economical means of developing non-food bioethanol. PMID:24736641

Nitride-based stacked laser diodes with a tunnel junction

NASA Astrophysics Data System (ADS)

Okawara, Satoru; Aoki, Yuta; Kuwabara, Masakazu; Takagi, Yasufumi; Maeda, Junya; Yoshida, Harumasa

2018-01-01

We report on nitride-based two-stack laser diodes with a tunnel junction for the first time. The stacked laser diode was monolithically grown by metalorganic vapor phase epitaxy. It was confirmed that the two-stack InGaN/GaN multiple-quantum-well laser diode with an emission wavelength of 394 nm exhibited laser oscillation up to a peak output power of over 10 W in the pulsed current mode. The upper and lower emitters of the device were capable of lasing at different threshold currents of 2.4 and 5.2 A with different slope efficiencies of 0.8 and 0.3 W/A, respectively.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Wei; Rosser, Ethan W.; Zhang, Di

Hydrogen polysulfides (H 2S n, n>1) have been recently suggested to be the actual signalling molecules that involved in sulfur-related redox biology. However the exact mechanisms of H 2S n are still poorly understood and a major hurdle in this field is the lack of reliable and convenient methods for H 2S n detection. In this work we report a unique ring-opening reaction of N-sulfonylaziridine by Na 2S 2 under mild conditions. Based on this reaction a novel H 2S n-specific fluorescent probe (AP) was developed. The probe showed high sensitivity and selectivity for H 2S n. Notably, the fluorescentmore » turn-on product, i.e. compound 1, exhibited excellent two-photon photophysical properties and a large Stokes shift. Moreover, the high solid state luminescent efficiency of compound 1 makes it a potential candidate for organic emitters and solid-state lighting devices.« less

High-Efficiency Visible Transmitting Polarizations Devices Based on the GaN Metasurface.

PubMed

Guo, Zhongyi; Xu, Haisheng; Guo, Kai; Shen, Fei; Zhou, Hongping; Zhou, Qingfeng; Gao, Jun; Yin, Zhiping

2018-05-15

Metasurfaces are capable of tailoring the amplitude, phase, and polarization of incident light to design various polarization devices. Here, we propose a metasurface based on the novel dielectric material gallium nitride (GaN) to realize high-efficiency modulation for both of the orthogonal linear polarizations simultaneously in the visible range. Both modulated transmitted phases of the orthogonal linear polarizations can almost span the whole 2π range by tailoring geometric sizes of the GaN nanobricks, while maintaining high values of transmission (almost all over 90%). At the wavelength of 530 nm, we designed and realized the beam splitter and the focusing lenses successfully. To further prove that our proposed method is suitable for arbitrary orthogonal linear polarization, we also designed a three-dimensional (3D) metalens that can simultaneously focus the X -, Y -, 45°, and 135° linear polarizations on spatially symmetric positions, which can be applied to the linear polarization measurement. Our work provides a possible method to achieve high-efficiency multifunctional optical devices in visible light by extending the modulating dimensions.

Flexible, planar-integrated, all-solid-state fiber supercapacitors with an enhanced distributed-capacitance effect.

PubMed

Liu, Bin; Tan, Dongsheng; Wang, Xianfu; Chen, Di; Shen, Guozhen

2013-06-10

Flexible and highly efficient energy storage units act as one of the key components in portable electronics. In this work, by planar-integrated assembly of hierarchical ZnCo₂O₄ nanowire arrays/carbon fibers electrodes, a new class of flexible all-solid-state planar-integrated fiber supercapacitors are designed and produced via a low-cost and facile method. The as-fabricated flexible devices exhibit high-efficiency, enhanced capacity, long cycle life, and excellent electrical stability. An enhanced distributed-capacitance effect is experimentally observed for the device. This strategy enables highly flexible new structured supercapacitors with maximum functionality and minimized size, thus making it possible to be readily applied in flexible/portable photoelectronic devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A strip-shield improves the efficiency of a solenoid coil in probes for high-field solid-state NMR of lossy biological samples.

PubMed

Wu, Chin H; Grant, Christopher V; Cook, Gabriel A; Park, Sang Ho; Opella, Stanley J

2009-09-01

A strip-shield inserted between a high inductance double-tuned solenoid coil and the glass tube containing the sample improves the efficiency of probes used for high-field solid-state NMR experiments on lossy aqueous samples of proteins and other biopolymers. A strip-shield is a coil liner consisting of thin copper strips layered on a PTFE (polytetrafluoroethylene) insulator. With lossy samples, the shift in tuning frequency is smaller, the reduction in Q, and RF-induced heating are all significantly reduced when the strip-shield is present. The performance of 800MHz (1)H/(15)N and (1)H/(13)C double-resonance probes is demonstrated on aqueous samples of membrane proteins in phospholipid bilayers.

Gas-exfoliated porous monolayer boron nitride for enhanced aerobic oxidative desulfurization performance.

PubMed

Wu, Yingcheng; Wu, Peiwen; Chao, Yanhong; He, Jing; Li, Hongping; Lu, Linjie; Jiang, Wei; Zhang, Beibei; Li, Huaming; Zhu, Wenshuai

2018-01-12

Hexagonal boron nitride has been regarded to be an efficient catalyst in aerobic oxidation fields, but limited by the less-exposed active sites. In this contribution, we proposed a simple green liquid nitrogen gas exfoliation strategy for preparation of porous monolayer nanosheets (BN-1). Owing to the reduced layer numbers, decreased lateral sizes and artificially-constructed pores, increased exposure of active sites was expected, further contributed to an enhanced aerobic oxidative desulfurization (ODS) performance up to ∼98% of sulfur removal, achieving ultra-deep desulfurization. This work not only introduced an excellent catalyst for aerobic ODS, but also provided a strategy for construction of some other highly-efficient monolayer two-dimensional materials for enhanced catalytic performance.

Gas-exfoliated porous monolayer boron nitride for enhanced aerobic oxidative desulfurization performance

NASA Astrophysics Data System (ADS)

Wu, Yingcheng; Wu, Peiwen; Chao, Yanhong; He, Jing; Li, Hongping; Lu, Linjie; Jiang, Wei; Zhang, Beibei; Li, Huaming; Zhu, Wenshuai

2018-01-01

Hexagonal boron nitride has been regarded to be an efficient catalyst in aerobic oxidation fields, but limited by the less-exposed active sites. In this contribution, we proposed a simple green liquid nitrogen gas exfoliation strategy for preparation of porous monolayer nanosheets (BN-1). Owing to the reduced layer numbers, decreased lateral sizes and artificially-constructed pores, increased exposure of active sites was expected, further contributed to an enhanced aerobic oxidative desulfurization (ODS) performance up to ˜98% of sulfur removal, achieving ultra-deep desulfurization. This work not only introduced an excellent catalyst for aerobic ODS, but also provided a strategy for construction of some other highly-efficient monolayer two-dimensional materials for enhanced catalytic performance.

Ultralow-Noise SiN Trampoline Resonators for Sensing and Optomechanics

NASA Astrophysics Data System (ADS)

Reinhardt, Christoph; Müller, Tina; Bourassa, Alexandre; Sankey, Jack C.

2016-04-01

In force sensing, optomechanics, and quantum motion experiments, it is typically advantageous to create lightweight, compliant mechanical elements with the lowest possible force noise. Here, we report the fabrication and characterization of high-aspect-ratio, nanogram-scale Si3 N4 "trampolines" having quality factors above 4 ×107 and ringdown times exceeding 5 min (mHz linewidth). These devices exhibit thermally limited force noise sensitivities below 20 aN /Hz1 /2 at room temperature, which is the lowest among solid-state mechanical sensors. We also characterize the suitability of these devices for high-finesse cavity readout and optomechanics applications, finding no evidence of surface or bulk optical losses from the processed nitride in a cavity achieving finesse 40,000. These parameters provide access to a single-photon cooperativity C0˜8 in the resolved-sideband limit, wherein a variety of outstanding optomechanics goals become feasible.

Facile fabrication of superparamagnetic graphene/polyaniline/Fe3O4 nanocomposites for fast magnetic separation and efficient removal of dye.

PubMed

Mu, Bin; Tang, Jie; Zhang, Long; Wang, Aiqin

2017-07-13

Using graphene as adsorbent for removal of pollutants from polluted water is commonly recognized to be costly because the graphene is usually produced by a very complex process. Herein, a simple and eco-friendly method was employed to fabricate efficient superparamagnetic graphene/polyaniline/Fe 3 O 4 nanocomposites for removal of dyes. The exfoliation of graphite as nanosheets and the functionalization of nanosheets with polyaniline and Fe 3 O 4 nanoparticles were simultaneously achieved via a one-pot reaction process combining the intercalation polymerization of aniline and the co-precipitation of the residual Fe 3+ and the generated Fe 2+ . The obtained graphene/polyaniline/Fe 3 O 4 nanocomposites exhibited excellent adsorption performance for Congo red, even in the presence of Brilliant green. The adsorption kinetics and adsorption isotherms were well fitted with pseudo second-order kinetic model and Langmuir isotherm model, respectively. In a word, this method is simple and industrially feasible, which provides a new approach to fabricate highly efficient graphene-based adsorbents on large scale for removal of dyes. In addition, it also can be used to exfoliate other two-dimensional materials, such as boron nitride, carbon nitride and MoS 2 for a range of possible applications.

Graphene/activated carbon supercapacitors with sulfonated-polyetheretherketone as solid-state electrolyte and multifunctional binder

NASA Astrophysics Data System (ADS)

Chen, Y.-R.; Chiu, K.-F.; Lin, H. C.; Chen, C.-L.; Hsieh, C. Y.; Tsai, C. B.; Chu, B. T. T.

2014-11-01

Sulfonated polyetheretherketone (SPEEK) has been synthesised by sulphonation process and used as the solid-state electrolyte, binder and surfactant for supercapacitors. Reduced graphene dispersed by SPEEK is used as a high-efficiency conducting additive in solid-state supercapacitors. It is found that SPEEK can improve the stability of the reduced graphene dispersion significantly, and therefore, the solid-state supercapacitors show a large decrease in IR drop and charge-transfer resistance (Rct), resulting in a higher rate capability. The solid-state supercapacitors with the activated carbon/reduced graphene/SPEEK/electrode can be operated from 1 to 8 A/g and exhibit capacity retention of 93%. The noteworthy is more than twice higher value for capacity retention by comparison with the solid-state supercapacitors using activated carbon/reduced graphene/PVDF electrode (capacity retention is 36%). The cell of reduced graphene with SPEEK can be cycled over 5000 times at 5 A/g with no capacitance fading.

Nanoscale solid-state cooling: a review.

PubMed

Ziabari, Amirkoushyar; Zebarjadi, Mona; Vashaee, Daryoosh; Shakouri, Ali

2016-09-01

The recent developments in nanoscale solid-state cooling are reviewed. This includes both theoretical and experimental studies of different physical concepts, as well as nanostructured material design and device configurations. We primarily focus on thermoelectric, thermionic and thermo-magnetic coolers. Particular emphasis is given to the concepts based on metal-semiconductor superlattices, graded materials, non-equilibrium thermoelectric devices, Thomson coolers, and photon assisted Peltier coolers as promising methods for efficient solid-state cooling. Thermomagnetic effects such as magneto-Peltier and Nernst-Ettingshausen cooling are briefly described and recent advances and future trends in these areas are reviewed. The ongoing progress in solid-state cooling concepts such as spin-calorimetrics, electrocalorics, non-equilibrium/nonlinear Peltier devices, superconducting junctions and two-dimensional materials are also elucidated and practical achievements are reviewed. We explain the thermoreflectance thermal imaging microscopy and the transient Harman method as two unique techniques developed for characterization of thermoelectric microrefrigerators. The future prospects for solid-state cooling are briefly summarized.

Radioisotopic energy conversion system (RECS): A new radioisotopic power cell, based on nuclear, atomic, and radiation transport principles

NASA Astrophysics Data System (ADS)

Steinfelds, Eric Victor

The topic of this thesis is the development of the Radioisotope Energy Conversion System (RECS) in a project which is utilizing analytical computational assisted design and some experimental Research in the investigation of fluorescers and effective transducers with the appropriate energy range choice for the conversion of energy. It is desirable to increase the efficiency in electrical power from the raw kinetic power available from the radioactive material within radioisotope power generators. A major step in this direction is the development and use of Radioisotope Energy Conversion Systems to supplement and ideally replace Radioactive Thermal Generators (RTG). It is possible to achieve electrical conversion efficiencies exceeding 25% for RECS power devices compared to only 9 percent efficiency for RTG's. The theoretical basis with existent materials for the potential achievability of efficiencies above 25% is documented within this thesis. The fundamental RECS consists of a radioisotope radiative source (C1), a mediating fluorescent gas (C2) which readily absorbs energy from the beta particles (or alpha's) and subsequently emits blue or UV photons, photovoltaic cells (C3) to convert the blue and UV photons into electrical energy [2], and electrical circuitry (C4). Solid State inspired component (C3), due to its theoretical (and attainable) high efficiency, is a large step ahead of the RTG design concept. The radioisotope flux source produces the beta(-) particles or alpha particles. Geometrically, presently, we prefer to have the ambient fluorescent gas surround the radioisotope flux source. Our fluorescer shall be a gas such as Krypton. Our specifically wide band-gap photovoltaic cells shall have gap energies which are slightly less than that of UV photons produced by the fluorescing gas. Diamond and Aluminum Nitride sample materials are good potential choices for photovoltaic cells, as is explained here in. Out of the material examples discussed, the highest electric power to mass ratio is found to be readily attainable with strontium-90 as the radiative source. Krypton-85 is indisputably the most efficient in RECS devices. In the conclusion in chapter VI, suggestions are given on acceptable ways of containing krypton-85 and providing sufficient shielding on deep space probes destined to use krypton-85 powered 'batteries'.

Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors

PubMed Central

2016-01-01

We report the first demonstration of flexible white phosphor-converted light emitting diodes (LEDs) based on p–n junction core/shell nitride nanowires. GaN nanowires containing seven radial In0.2Ga0.8N/GaN quantum wells were grown by metal–organic chemical vapor deposition on a sapphire substrate by a catalyst-free approach. To fabricate the flexible LED, the nanowires are embedded into a phosphor-doped polymer matrix, peeled off from the growth substrate, and contacted using a flexible and transparent silver nanowire mesh. The electroluminescence of a flexible device presents a cool-white color with a spectral distribution covering a broad spectral range from 400 to 700 nm. Mechanical bending stress down to a curvature radius of 5 mm does not yield any degradation of the LED performance. The maximal measured external quantum efficiency of the white LED is 9.3%, and the wall plug efficiency is 2.4%. PMID:27331079

Tunable, rare earth-doped solid state lasers

DOEpatents

Emmett, John L.; Jacobs, Ralph R.; Krupke, William F.; Weber, Marvin J.

1980-01-01

Laser apparatus comprising combinations of an excimer pump laser and a rare earth-doped solid matrix, utilizing the 5d-4f radiative transition in a rare earth ion to produce visible and ultra-violet laser radiation with high overall efficiency in selected cases and relatively long radiative lifetimes.

Molecular titanium nitrides: nucleophiles unleashed

DOE PAGES

Grant, Lauren N.; Pinter, Balazs; Kurogi, Takashi; ...

2017-01-30

In this contribution we present reactivity studies of a rare example of a titanium salt, in the form of [μ 2-K(OEt 2)] 2[(PN) 2Timore » $$\\equiv$$N] 2 (1) (PN - = N-(2-(diisopropylphosphino)-4-methylphenyl)-2,4,6-trimethylanilide) to produce a series of imide moieties including rare examples such as methylimido, borylimido, phosphonylimido, and a parent imido. For the latter, using various weak acids allowed us to narrow the pK a range of the NH group in (PN) 2Ti$$\\equiv$$NH to be between 26–36. Complex 1 could be produced by a reductively promoted elimination of N 2 from the azide precursor (PN) 2TiN 3, whereas reductive splitting of N 2 could not be achieved using the complex (PN) 2Ti$$\\equiv$$N$$\\equiv$$N$$\\equiv$$Ti(PN) 2 (2) and a strong reductant. Complete N-atom transfer reactions could also be observed when 1 was treated with ClC(O) tBu and OCCPh 2 to form NC tBu and KNCCPh 2, respectively, along with the terminal oxo complex (PN) 2Ti$$\\equiv$$O, which was also characterized. A combination of solid state 15N NMR (MAS) and theoretical studies allowed us to understand the shielding effect of the counter cation in dimer 1, the monomer [K(18-crown-6)][(PN) 2Ti$$\\equiv$$N], and the discrete salt [K(2,2,2-Kryptofix)][(PN) 2Ti$$\\equiv$$N] as well as the origin of the highly downfield 15N NMR resonance when shifting from dimer to monomer to a terminal nitride (discrete salt). The upfield shift of 15N nitride resonance in the 15N NMR spectrum was found to be linked to the K + induced electronic structural change of the titanium-nitride functionality by using a combination of MO analysis and quantum chemical analysis of the corresponding shielding tensors.« less

Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs

DOE PAGES

Jacobs, Benjamin W.; Ayres, Virginia M.; Stallcup, Richard E.; ...

2007-10-19

Two-point and four-point probe electrical measurements of a biphasic gallium nitride nanowire and current–voltage characteristics of a gallium nitride nanowire based field effect transistor are reported. The biphasic gallium nitride nanowires have a crystalline homostructure consisting of wurtzite and zinc-blende phases that grow simultaneously in the longitudinal direction. There is a sharp transition of one to a few atomic layers between each phase. Here, all measurements showed high current densities. Evidence of single-phase current transport in the biphasic nanowire structure is discussed.

Static sublimation purification process and characterization of LiZnAs semiconductor material

NASA Astrophysics Data System (ADS)

Montag, Benjamin W.; Reichenberger, Michael A.; Edwards, Nathaniel S.; Ugorowski, Philip B.; Sunder, Madhana; Weeks, Joseph; McGregor, Douglas S.

2016-03-01

Refinement of the class AIBIICV materials continue as a candidate for solid-state neutron detectors. Such a device would have greater efficiency, in a compact form, than present day gas-filled 3He and 10BF3 detectors. The 6Li(n,t)4He reaction yields a total Q value of 4.78 MeV, larger than 10B, and easily identified above background radiations. Hence, devices composed of either natural Li (nominally 7.5% 6Li) or enriched 6Li (usually 95% 6Li) may provide a semiconductor material for compact high efficiency neutron detectors. A sub-branch of the III-V semiconductors, the filled tetrahedral compounds, AIBIICV, known as Nowotny-Juza compounds, are known for their desirable cubic crystal structure. Starting material was synthesized by equimolar portions of Li, Zn, and As sealed under vacuum (10-6 Torr) in quartz ampoules with a boron nitride lining, and reacted in a compounding furnace [1]. The synthesized material showed signs of high impurity levels from material and electrical property characterization. In the present work, a static vacuum sublimation of synthesized LiZnAs loaded in a quartz vessel was performed to help purify the synthesized material. The chemical composition of the sublimed material and remains material was confirmed by Inductively Coupled Plasma Optical Emission Spectroscopy (ICP-OES). Lithium was not detected in the sublimed material, however, near stoichiometric amounts of each constituent element were found in the remains material for LiZnAs. X-ray diffraction phase identification scans of the remains material and sublimed material were compared, and further indicated the impurity materials were removed from the synthesized materials. The remaining powder post the sublimation process showed characteristics of a higher purity ternary compound.

Self-assembled hybrid polymer-TiO2 nanotube array heterojunction solar cells.

PubMed

Shankar, Karthik; Mor, Gopal K; Prakasam, Haripriya E; Varghese, Oomman K; Grimes, Craig A

2007-11-20

Films comprised of 4 microm long titanium dioxide nanotube arrays were fabricated by anodizing Ti foils in an ethylene glycol based electrolyte. A carboxylated polythiophene derivative was self-assembled onto the TiO2 nanotube arrays by immersing them in a solution of the polymer. The binding sites of the carboxylate moiety along the polymer chain provide multiple anchoring sites to the substrate, making for a stable rugged film. Backside illuminated liquid junction solar cells based on TiO2 nanotube films sensitized by the self-assembled polymeric layer showed a short-circuit current density of 5.5 mA cm-2, a 0.7 V open circuit potential, and a 0.55 fill factor yielding power conversion efficiencies of 2.1% under AM 1.5 sun. A backside illuminated single heterojunction solid state solar cell using the same self-assembled polymer was demonstrated and yielded a photocurrent density as high as 2.0 mA cm-2. When a double heterojunction was formed by infiltrating a blend of poly(3-hexylthiophene) (P3HT) and C60-methanofullerene into the self-assembled polymer coated nanotube arrays, a photocurrent as high as 6.5 mA cm-2 was obtained under AM 1.5 sun with a corresponding efficiency of 1%. The photocurrent action spectra showed a maximum incident photon-to-electron conversion efficiency (IPCE) of 53% for the liquid junction cells and 25% for the single heterojunction solid state solar cells.

Monolayer Nickel Cobalt Hydroxyl Carbonate for High Performance All-Solid-State Asymmetric Supercapacitors.

PubMed

Zhao, Yufeng; Ma, Hongnan; Huang, Shifei; Zhang, Xuejiao; Xia, Meirong; Tang, Yongfu; Ma, Zi-Feng

2016-09-07

The emergence of atomically thick nanolayer materials, which feature a short ion diffusion channel and provide more exposed atoms in the electrochemical reactions, offers a promising occasion to optimize the performance of supercapacitors on the atomic level. In this work, a novel monolayer Ni-Co hydroxyl carbonate with an average thickness of 1.07 nm is synthesized via an ordinary one-pot hydrothermal route for the first time. This unique monolayer structure can efficiently rise up the exposed electroactive sites and facilitate the surface dependent electrochemical reaction processes, and thus results in outstanding specific capacitance of 2266 F g(-1). Based on this material, an all-solid-state asymmetric supercapacitor is developed adopting alkaline PVA (poly(vinyl alcohol)) gel (PVA/KOH) as electrolyte, which performs remarkable cycling stability (no capacitance fade after 19 000 cycles) together with promising energy density of 50 Wh kg(-1) (202 μWh cm(-2)) and high power density of 8.69 kW kg(-1) (35.1 mW cm(-2)). This as-assembled all-solid-state asymmetric supercapacitor (AASC) holds great potential in the field of portable energy storage devices.

Femtosecond all-solid-state laser for refractive surgery

NASA Astrophysics Data System (ADS)

Zickler, Leander; Han, Meng; Giese, G.'nter; Loesel, Frieder H.; Bille, Josef F.

2003-06-01

Refractive surgery in the pursuit of perfect vision (e.g. 20/10) requires firstly an exact measurement of abberations induced by the eye and then a sophisticated surgical approach. A recent extension of wavefront measurement techniques and adaptive optics to ophthalmology has quantitatively characterized the quality of the human eye. The next milestone towards perfect vision is developing a more efficient and precise laser scalpel and evaluating minimal-invasive laser surgery strategies. Femtosecond all-solid-state MOPA lasers based on passive modelocking and chirped pulse amplification are excellent candidates for eye surgery due to their stability, ultra-high intensity and compact tabletop size. Furthermore, taking into account the peak emission in the near IR and diffraction limited focusing abilities, surgical laser systems performing precise intrastromal incisions for corneal flap resection and intrastromal corneal reshaping promise significant improvement over today's Photorefractive Keratectomy (PRK) and Laser Assisted In Situ Keratomileusis (LASIK) techniques which utilize UV excimer lasers. Through dispersion control and optimized regenerative amplification, a compact femtosecond all-solid-state laser with pulsed energy well above LIOB threshold and kHz repetition rate is constructed. After applying a pulse sequence to the eye, the modified corneal morphology is investigated by high resolution microscopy (Multi Photon/SHG Confocal Microscope).

Ab initio study of aspirin adsorption on single-walled carbon and carbon nitride nanotubes

NASA Astrophysics Data System (ADS)

Lee, Yongju; Kwon, Dae-Gyeon; Kim, Gunn; Kwon, Young-Kyun

We use ab intio density functional theory to investigate the adsorption properties of acetylsalicylic acid or aspirin on a (10, 0) carbon nanotube (CNT) and a (8, 0) triazine-based graphitic carbon nitride nanotube (CNNT). It is found that an aspirin molecule binds stronger to the CNNT with its adsorption energy of 0.67 eV than to the CNT with 0.51 eV. The stronger adsorption energy on the CNNT is ascribed to the high reactivity of its N atoms with high electron affinity. The CNNT exhibits local electric dipole moments, which cause strong charge redistribution in the aspirin molecule adsorbed on the CNNT than on the CNT. We also explore the influence of an external electric field on the adsorption properties of aspirin on these nanotubes by examining the modifications in their electronic band structures, partial densities of states, and charge distributions. It is found that an electric field applied along a particular direction induces aspirin molecular states in the in-gap region of the CNNT implying a potential application of aspirin detection.

Crystallographic alignment of high-density gallium nitride nanowire arrays.

PubMed

Kuykendall, Tevye; Pauzauskie, Peter J; Zhang, Yanfeng; Goldberger, Joshua; Sirbuly, Donald; Denlinger, Jonathan; Yang, Peidong

2004-08-01

Single-crystalline, one-dimensional semiconductor nanostructures are considered to be one of the critical building blocks for nanoscale optoelectronics. Elucidation of the vapour-liquid-solid growth mechanism has already enabled precise control over nanowire position and size, yet to date, no reports have demonstrated the ability to choose from different crystallographic growth directions of a nanowire array. Control over the nanowire growth direction is extremely desirable, in that anisotropic parameters such as thermal and electrical conductivity, index of refraction, piezoelectric polarization, and bandgap may be used to tune the physical properties of nanowires made from a given material. Here we demonstrate the use of metal-organic chemical vapour deposition (MOCVD) and appropriate substrate selection to control the crystallographic growth directions of high-density arrays of gallium nitride nanowires with distinct geometric and physical properties. Epitaxial growth of wurtzite gallium nitride on (100) gamma-LiAlO(2) and (111) MgO single-crystal substrates resulted in the selective growth of nanowires in the orthogonal [1\\[Evec]0] and [001] directions, exhibiting triangular and hexagonal cross-sections and drastically different optical emission. The MOCVD process is entirely compatible with the current GaN thin-film technology, which would lead to easy scale-up and device integration.

Improved Magnetron Stability and Reduced Noise in Efficient Transmitters for Superconducting Accelerators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kazakevich, G.; Johnson, R.; Lebedev, V.

State of the art high-current superconducting accelerators require efficient RF sources with a fast dynamic phase and power control. This allows for compensation of the phase and amplitude deviations of the accelerating voltage in the Superconducting RF (SRF) cavities caused by microphonics, etc. Efficient magnetron transmitters with fast phase and power control are attractive RF sources for this application. They are more cost effective than traditional RF sources such as klystrons, IOTs and solid-state amplifiers used with large scale accelerator projects. However, unlike traditional RF sources, controlled magnetrons operate as forced oscillators. Study of the impact of the controlling signalmore » on magnetron stability, noise and efficiency is therefore important. This paper discusses experiments with 2.45 GHz, 1 kW tubes and verifies our analytical model which is based on the charge drift approximation.« less

Visible-light-driven chemoselective hydrogenation of nitroarenes to anilines in water via graphitic carbon nitride metal-free photocatalysis.

PubMed

Xiao, Gang; Li, Peifeng; Zhao, Yilin; Xu, Shengnan; Su, Haijia

2018-05-20

Green and efficient procedures are highly required for the chemoselective hydrogenation of functionalized nitroarenes to industrially important anilines. Here, we show that visible-light-driven, chemoselective hydrogenation of functionalized nitroarenes bearing the sensitive groups to anilines can be achieved in good to excellent yields (82-100%) in water under relatively mild conditions, catalyzed by low-cost and recyclable graphitic carbon nitride. It is also applicable in gram-scale reaction with 86% yield of aniline. Mechanism study reveals that visible light induced electrons are responsible for the hydrogenation reactions and thermal energy can also promote the photocatalytic activity. Kinetics study shows that this reaction possibly occurs via one-step hydrogenation or stepwise condensation route. Wide applications can be expected using this green, efficient, and highly selective photocatalysis system in reduction reactions for fine chemical synthesis. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Solid state SPS microwave generation and transmission study. Volume 2, phase 2: Appendices

NASA Technical Reports Server (NTRS)

Maynard, O. E.

1980-01-01

The solid state sandwich concept for SPS was further defined. The design effort concentrated on the spacetenna, but did include some system analysis for parametric comparison reasons. Basic solid state microwave devices were defined and modeled. An initial conceptual subsystems and system design was performed as well as sidelobe control and system selection. The selected system concept and parametric solid state microwave power transmission system data were assessed relevant to the SPS concept. Although device efficiency was not a goal, the sensitivities to design of this efficiency were parametrically treated. Sidelobe control consisted of various single step tapers, multistep tapers and Gaussian tapers. A hybrid concept using tubes and solid state was evaluated. Thermal analyses are included with emphasis on sensitivities to waste heat radiator form factor, emissivity, absorptivity, amplifier efficiency, material and junction temperature.

Process Development and Property Evaluation of Organosilicon Infiltrated Reaction Sintered Silicon Nitride (RSSN).

DTIC Science & Technology

1982-01-01

Battelle) (5) Prepolymer based on methyltrichlorosilane and ammonia (Battelle) (6) Polysilastyrene (Professor West, University of Wisconsin) (7...These types of materials are not commercially available, but are produced from commercial intermediates (methyldichlorosilane and ammonia ) and have been...methyltrichlorosilane and ammonia is a low melting, solid resin which has been shown to yield 72 percent residue by thermogravimetric analysis (TGA) in our work

Metal Halide Solid-State Surface Treatment for High Efficiency PbS and PbSe QD Solar Cells

PubMed Central

Crisp, Ryan W.; Kroupa, Daniel M.; Marshall, Ashley R.; Miller, Elisa M.; Zhang, Jianbing; Beard, Matthew C.; Luther, Joseph M.

2015-01-01

We developed a layer-by-layer method of preparing PbE (E = S or Se) quantum dot (QD) solar cells using metal halide (PbI2, PbCl2, CdI2, or CdCl2) salts dissolved in dimethylformamide to displace oleate surface ligands and form conductive QD solids. The resulting QD solids have a significant reduction in the carbon content compared to films treated with thiols and organic halides. We find that the PbI2 treatment is the most successful in removing alkyl surface ligands and also replaces most surface bound Cl- with I-. The treatment protocol results in PbS QD films exhibiting a deeper work function and band positions than other ligand exchanges reported previously. The method developed here produces solar cells that perform well even at film thicknesses approaching a micron, indicating improved carrier transport in the QD films. We demonstrate QD solar cells based on PbI2 with power conversion efficiencies above 7%. PMID:25910183