High Correlated Paternity Leads to Negative Effects on Progeny Performance in Two Mediterranean Shrub Species

PubMed Central

Nora, Sofia; Aparicio, Abelardo; Albaladejo, Rafael G.

2016-01-01

Anthropogenic habitat deterioration can promote changes in plant mating systems that subsequently may affect progeny performance, thereby conditioning plant recruitment for the next generation. However, very few studies yet tested mating system parameters other than outcrossing rates; and the direct effects of the genetic diversity of the pollen received by maternal plants (i.e. correlated paternity) has often been overlooked. In this study, we investigated the relation between correlated paternity and progeny performance in two common Mediterranean shrubs, Myrtus communis and Pistacia lentiscus. To do so, we collected open-pollinated progeny from selected maternal plants, calculated mating system parameters using microsatellite genotyping and conducted sowing experiments under greenhouse and field conditions. Our results showed that some progeny fitness components were negatively affected by the high correlated paternity of maternal plants. In Myrtus communis, high correlated paternity had a negative effect on the proportion and timing of seedling emergence in the natural field conditions and in the greenhouse sowing experiment, respectively. In Pistacia lentiscus, seedling emergence time under field conditions was also negatively influenced by high correlated paternity and a progeny survival analysis in the field experiment showed greater mortality of seedlings from maternal plants with high correlated paternity. Overall, we found effects of correlated paternity on the progeny performance of Myrtus communis, a self-compatible species. Further, we also detected effects of correlated paternity on the progeny emergence time and survival in Pistacia lentiscus, an obligate outcrossed species. This study represents one of the few existing empirical examples which highlight the influence that correlated paternity may exert on progeny performance in multiple stages during early seedling growth. PMID:27835658

High Correlated Paternity Leads to Negative Effects on Progeny Performance in Two Mediterranean Shrub Species.

PubMed

Nora, Sofia; Aparicio, Abelardo; Albaladejo, Rafael G

2016-01-01

Anthropogenic habitat deterioration can promote changes in plant mating systems that subsequently may affect progeny performance, thereby conditioning plant recruitment for the next generation. However, very few studies yet tested mating system parameters other than outcrossing rates; and the direct effects of the genetic diversity of the pollen received by maternal plants (i.e. correlated paternity) has often been overlooked. In this study, we investigated the relation between correlated paternity and progeny performance in two common Mediterranean shrubs, Myrtus communis and Pistacia lentiscus. To do so, we collected open-pollinated progeny from selected maternal plants, calculated mating system parameters using microsatellite genotyping and conducted sowing experiments under greenhouse and field conditions. Our results showed that some progeny fitness components were negatively affected by the high correlated paternity of maternal plants. In Myrtus communis, high correlated paternity had a negative effect on the proportion and timing of seedling emergence in the natural field conditions and in the greenhouse sowing experiment, respectively. In Pistacia lentiscus, seedling emergence time under field conditions was also negatively influenced by high correlated paternity and a progeny survival analysis in the field experiment showed greater mortality of seedlings from maternal plants with high correlated paternity. Overall, we found effects of correlated paternity on the progeny performance of Myrtus communis, a self-compatible species. Further, we also detected effects of correlated paternity on the progeny emergence time and survival in Pistacia lentiscus, an obligate outcrossed species. This study represents one of the few existing empirical examples which highlight the influence that correlated paternity may exert on progeny performance in multiple stages during early seedling growth.

Organic field-effect transistors: a combined study on short-channel effects and the influence of substrate pre-treatment on ambient stability

NASA Astrophysics Data System (ADS)

Klug, A.; Meingast, A.; Wurzinger, G.; Blümel, A.; Schmoltner, K.; Scherf, U.; List, E. J. W.

2011-10-01

For high-performance low-cost applications based on organic field-effect transistors (OFETs) and corresponding sensors essential properties of the applied semiconducting materials include solution-processability, high field-effect mobility, compatibility with adjacent layers and stability with respect to ambient conditions. In this combined study regioregular poly(3-hexylthiophene)- and pentacene-based bottom-gate bottom-contact OFETs with various channel lengths are thoroughly investigated with respect to short-channel effects and the implications of dielectric surface modification with hexamethyldisilazane (HMDS) on device performance. In addition, the influences of oxygen, moisture and HMDStreatment on the ambient stability of the devices are evaluated in detail. While OFETs without surface modification exhibited the expected degradation behavior upon air exposure mainly due to oxygen/moisture-induced doping or charge-carrier trapping, the stability of the investigated semiconductors was found to be distinctly increased when the substrate surface was hydrophobized. The presented results thoroughly summarize important issues which have to be considered when selecting semiconducting materials for high-performance OFETs and OFET-based sensors.

High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Sohn, Jung Inn; Cha, Seung Nam; Whang, Dongmok; Kim, Jong Min; Kang, Dae Joon

2014-05-21

We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.

Penn State axial flow turbine facility: Performance and nozzle flow field

NASA Technical Reports Server (NTRS)

Lakshminarayana, B.; Zaccaria, M.; Itoh, S.

1991-01-01

The objective is to gain a thorough understanding of the flow field in a turbine stage including three-dimensional inviscid and viscid effects, unsteady flow field, rotor-stator interaction effects, unsteady blade pressures, shear stress, and velocity field in rotor passages. The performance of the turbine facility at the design condition is measured and compared with the design distribution. The data on the nozzle vane static pressure and wake characteristics are presented and interpreted. The wakes are found to be highly three-dimensional, with substantial radial inward velocity at most spanwise locations.

Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors

PubMed Central

Ahn, Cheol Hyoun; Senthil, Karuppanan; Cho, Hyung Koun; Lee, Sang Yeol

2013-01-01

High-performance thin-film transistors (TFTs) are the fundamental building blocks in realizing the potential applications of the next-generation displays. Atomically controlled superlattice structures are expected to induce advanced electric and optical performance due to two-dimensional electron gas system, resulting in high-electron mobility transistors. Here, we have utilized a semiconductor/insulator superlattice channel structure comprising of ZnO/Al2O3 layers to realize high-performance TFTs. The TFT with ZnO (5 nm)/Al2O3 (3.6 nm) superlattice channel structure exhibited high field effect mobility of 27.8 cm2/Vs, and threshold voltage shift of only < 0.5 V under positive/negative gate bias stress test during 2 hours. These properties showed extremely improved TFT performance, compared to ZnO TFTs. The enhanced field effect mobility and stability obtained for the superlattice TFT devices were explained on the basis of layer-by-layer growth mode, improved crystalline nature of the channel layers, and passivation effect of Al2O3 layers. PMID:24061388

Modeling two-phase flow in three-dimensional complex flow-fields of proton exchange membrane fuel cells

NASA Astrophysics Data System (ADS)

Kim, Jinyong; Luo, Gang; Wang, Chao-Yang

2017-10-01

3D fine-mesh flow-fields recently developed by Toyota Mirai improved water management and mass transport in proton exchange membrane (PEM) fuel cell stacks, suggesting their potential value for robust and high-power PEM fuel cell stack performance. In such complex flow-fields, Forchheimer's inertial effect is dominant at high current density. In this work, a two-phase flow model of 3D complex flow-fields of PEMFCs is developed by accounting for Forchheimer's inertial effect, for the first time, to elucidate the underlying mechanism of liquid water behavior and mass transport inside 3D complex flow-fields and their adjacent gas diffusion layers (GDL). It is found that Forchheimer's inertial effect enhances liquid water removal from flow-fields and adds additional flow resistance around baffles, which improves interfacial liquid water and mass transport. As a result, substantial improvements in high current density cell performance and operational stability are expected in PEMFCs with 3D complex flow-fields, compared to PEMFCs with conventional flow-fields. Higher current density operation required to further reduce PEMFC stack cost per kW in the future will necessitate optimizing complex flow-field designs using the present model, in order to efficiently remove a large amount of product water and hence minimize the mass transport voltage loss.

High-performance multilayer WSe 2 field-effect transistors with carrier type control

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pudasaini, Pushpa Raj; Oyedele, Akinola; Zhang, Cheng

In this paper, high-performance multilayer WSe 2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe 2 FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe 2 thickness. The carrier type evolves with increasing WSe 2 channel thickness, being p-type, ambipolar, and n-type at thicknesses <3, ~4, and >5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe 2 as a function of the thickness and the carrier band offsets relative to the metalmore » contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. Finally, this work demonstrates progress towards the realization of high-performance multilayer WSe 2 FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and optoelectronic applications.« less

High-performance multilayer WSe 2 field-effect transistors with carrier type control

DOE PAGES

Pudasaini, Pushpa Raj; Oyedele, Akinola; Zhang, Cheng; ...

2017-07-06

In this paper, high-performance multilayer WSe 2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe 2 FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe 2 thickness. The carrier type evolves with increasing WSe 2 channel thickness, being p-type, ambipolar, and n-type at thicknesses <3, ~4, and >5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe 2 as a function of the thickness and the carrier band offsets relative to the metalmore » contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. Finally, this work demonstrates progress towards the realization of high-performance multilayer WSe 2 FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and optoelectronic applications.« less

Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials

NASA Astrophysics Data System (ADS)

Ilatikhameneh, Hesameddin; Tan, Yaohua; Novakovic, Bozidar; Klimeck, Gerhard; Rahman, Rajib; Appenzeller, Joerg

2015-12-01

In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of TFETs is their low ON-currents. 2D material based TFETs can have tight gate control and high electric fields at the tunnel junction, and can in principle generate high ON-currents along with a sub-threshold swing smaller than 60 mV/dec. Our simulations reveal that high performance TMD TFETs, not only require good gate control, but also rely on the choice of the right channel material with optimum band gap, effective mass and source/drain doping level. Unlike previous works, a full band atomistic tight binding method is used self-consistently with 3D Poisson equation to simulate ballistic quantum transport in these devices. The effect of the choice of TMD material on the performance of the device and its transfer characteristics are discussed. Moreover, the criteria for high ON-currents are explained with a simple analytic model, showing the related fundamental factors. Finally, the subthreshold swing and energy-delay of these TFETs are compared with conventional CMOS devices.

HIGH FIELD Q-SLOPE AND THE BAKING EFFECT

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ciovati, Gianluigi

The performance of SRF cavities made of bulk Nb at high fields (peak surface magnetic field greater than about 90 mT) is characterized by exponentially increasing RF losses (high-field Q-slope), in the absence of field emission, which are often mitigated by a low temperature (100-140 °C, 12-48h) baking. In this contribution, recent experimental results and phenomenological models to explain this effect will be briefly reviewed. New experimental results on the high-field Q-slope will be presented for cavities that had been heat treated at high temperature in the presence of a small partial pressure of nitrogen. Improvement of the cavity performancesmore » have been obtained, while surface analysis measurements on Nb samples treated with the cavities revealed significantly lower hydrogen concentration than for samples that followed standard cavity treatments.« less

High magnetic field test of bismuth Hall sensors for ITER steady state magnetic diagnostic.

PubMed

Ďuran, I; Entler, S; Kohout, M; Kočan, M; Vayakis, G

2016-11-01

Performance of bismuth Hall sensors developed for the ITER steady state magnetic diagnostic was investigated for high magnetic fields in the range ±7 T. Response of the sensors to the magnetic field was found to be nonlinear particularly within the range ±1 T. Significant contribution of the planar Hall effect to the sensors output voltage causing undesirable cross field sensitivity was identified. It was demonstrated that this effect can be minimized by the optimization of the sensor geometry and alignment with the magnetic field and by the application of "current-spinning technique."

Effects of cusped field thruster on the performance of drag-free control system

NASA Astrophysics Data System (ADS)

Cui, K.; Liu, H.; Jiang, W. J.; Sun, Q. Q.; Hu, P.; Yu, D. R.

2018-03-01

With increased measurement tasks of space science, more requirements for the spacecraft environment have been put forward. Those tasks (e.g. the measurement of Earth's steady state gravity field anomalies) lead to the desire for developing drag-free control. Higher requirements for the thruster performance are made due to the demand for the drag-free control system and real-time compensation for non-conservative forces. Those requirements for the propulsion system include wide continuous throttling ability, high resolution, rapid response, low noise and so on. As a promising candidate, the cusped field thruster has features such as the high working stability, the low erosion rate, a long lifetime and the simple structure, so that it is chosen as the thruster to be discussed in this paper. Firstly, the performance of a new cusped field thruster is tested and analyzed. Then a drag-free control scheme based on the cusped field thruster is designed to evaluate the performance of this thruster. Subsequently, the effects of the thrust resolution, transient response time and thrust uncertainty on the controller are calculated respectively. Finally, the performance of closed-loop system is analyzed, and the simulation results verify the feasibility of applying cusped field thruster to drag-free flight in the space science measurement tasks.

Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

DOE PAGES

BastaniNejad, Mahzad; Elmustafa, Abdelmageed A.; Forman, Eric; ...

2015-07-01

DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (~nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>μA) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolishedmore » by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.« less

Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

DOE Office of Scientific and Technical Information (OSTI.GOV)

BastaniNejad, Mahzad; Elmustafa, Abdelmageed A.; Forman, Eric

DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (~nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>μA) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolishedmore » by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.« less

Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

DOE Office of Scientific and Technical Information (OSTI.GOV)

BastaniNejad, Mahzad, E-mail: Mahhzad@gmail.com; Elmustafa, Abdelmageed A.; Forman, Eric

DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (∼nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>μA) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolishedmore » by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The authors speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.« less

Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics

NASA Astrophysics Data System (ADS)

Sangwan, Vinod K.; Jariwala, Deep; Everaerts, Ken; McMorrow, Julian J.; He, Jianting; Grayson, Matthew; Lauhon, Lincoln J.; Marks, Tobin J.; Hersam, Mark C.

2014-02-01

Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current saturation with intrinsic gain >1.0 in vacuum (pressure < 2 × 10-5 Torr), and overall improved performance compared to control devices on conventional SiO2 gate dielectrics. Statistical analysis of the field-effect mobility and residual carrier concentration demonstrate high spatial uniformity of the dielectric interfacial properties and graphene transistor characteristics over full 3 in. wafers. This work thus establishes SANDs as an effective platform for large-area, high-performance graphene electronics.

Design of double gate vertical tunnel field effect transistor using HDB and its performance estimation

NASA Astrophysics Data System (ADS)

Seema; Chauhan, Sudakar Singh

2018-05-01

In this paper, we demonstrate the double gate vertical tunnel field-effect transistor using homo/hetero dielectric buried oxide (HDB) to obtain the optimized device characteristics. In this concern, the existence of double gate, HDB and electrode work-function engineering enhances DC performance and Analog/RF performance. The use of electrostatic doping helps to achieve higher on-current owing to occurrence of higher tunneling generation rate of charge carriers at the source/epitaxial interface. Further, lightly doped drain region and high- k dielectric below channel and drain region are responsible to suppress the ambipolar current. Simulated results clarifies that proposed device have achieved the tremendous performance in terms of driving current capability, steeper subthreshold slope (SS), drain induced barrier lowering (DIBL), hot carrier effects (HCEs) and high frequency parameters for better device reliability.

Estimating thermal performance curves from repeated field observations

USGS Publications Warehouse

Childress, Evan; Letcher, Benjamin H.

2017-01-01

Estimating thermal performance of organisms is critical for understanding population distributions and dynamics and predicting responses to climate change. Typically, performance curves are estimated using laboratory studies to isolate temperature effects, but other abiotic and biotic factors influence temperature-performance relationships in nature reducing these models' predictive ability. We present a model for estimating thermal performance curves from repeated field observations that includes environmental and individual variation. We fit the model in a Bayesian framework using MCMC sampling, which allowed for estimation of unobserved latent growth while propagating uncertainty. Fitting the model to simulated data varying in sampling design and parameter values demonstrated that the parameter estimates were accurate, precise, and unbiased. Fitting the model to individual growth data from wild trout revealed high out-of-sample predictive ability relative to laboratory-derived models, which produced more biased predictions for field performance. The field-based estimates of thermal maxima were lower than those based on laboratory studies. Under warming temperature scenarios, field-derived performance models predicted stronger declines in body size than laboratory-derived models, suggesting that laboratory-based models may underestimate climate change effects. The presented model estimates true, realized field performance, avoiding assumptions required for applying laboratory-based models to field performance, which should improve estimates of performance under climate change and advance thermal ecology.

Efficient Defect Engineering for Solution Combustion Processed In-Zn-O thin films for high performance transistors

NASA Astrophysics Data System (ADS)

Liang, Xiaoci; Wang, Chengcai; Liang, Jun; Liu, Chuan; Pei, Yanli

2017-09-01

The oxygen related defects in the solution combustion-processed InZnO vitally affect the field-effect mobility and on-off characteristics in thin film transistors (TFTs). We use photoelectron spectroscopy to reveal that these defects can be well controlled by adjusting the atmosphere and flow rate during the combustion reaction, but are hardly affected by further post-annealing after the reaction. In device performance, the threshold voltage of the InZnO-TFTs was regulated in a wide range from 3.5 V to 11.0 V. To compromise the high field-effect mobility and good subthreshold properties, we fabricate the TFTs with double active layers of InZnO to achieve vertical gradience in defect distribution. The resulting TFT exhibits much higher field-effect mobility as 17.5 cm2 · V-1 · s-1, a low reversed sub-threshold slope as 0.35 V/decade, and a high on-off ratio as 107. The presented understandings and methods on defect engineering are efficient in improving the device performance of TFTs made from the combustion reaction process.

Ultra-high gain diffusion-driven organic transistor.

PubMed

Torricelli, Fabrizio; Colalongo, Luigi; Raiteri, Daniele; Kovács-Vajna, Zsolt Miklós; Cantatore, Eugenio

2016-02-01

Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show a new organic field-effect transistor architecture with a gain larger than 700. This is the highest gain ever reported for organic field-effect transistors. In the proposed organic field-effect transistor, the charge injection and extraction at the metal-semiconductor contacts are driven by the charge diffusion. The ideal conditions of ohmic contacts with negligible contact resistance and flat current saturation are demonstrated. The approach is general and can be extended to any thin-film technology opening unprecedented opportunities for the development of high-performance flexible electronics.

Ultra-high gain diffusion-driven organic transistor

NASA Astrophysics Data System (ADS)

Torricelli, Fabrizio; Colalongo, Luigi; Raiteri, Daniele; Kovács-Vajna, Zsolt Miklós; Cantatore, Eugenio

2016-02-01

Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show a new organic field-effect transistor architecture with a gain larger than 700. This is the highest gain ever reported for organic field-effect transistors. In the proposed organic field-effect transistor, the charge injection and extraction at the metal-semiconductor contacts are driven by the charge diffusion. The ideal conditions of ohmic contacts with negligible contact resistance and flat current saturation are demonstrated. The approach is general and can be extended to any thin-film technology opening unprecedented opportunities for the development of high-performance flexible electronics.

An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes.

PubMed

Kim, Jong Su; Kim, Beom Joon; Choi, Young Jin; Lee, Moo Hyung; Kang, Moon Sung; Cho, Jeong Ho

2016-06-01

High-performance vertical field-effect transistors are developed, which are based on graphene electrodes doped using the underside doping method. The underside doping method enables effective tuning of the graphene work function while maintaining the surface properties of the pristine graphene. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Doubling the critical current density in superconducting FeSe 0.5Te 0.5 thin films by low temperature oxygen annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Cheng; Si, Weidong; Li, Qiang

Iron chalcogenide superconducting thin films and coated conductors are attractive for potential high field applications at liquid helium temperature for their high critical current densities J c, low anisotropies, and relatively strong grain couplings. Embedding flux pinning defects is a general approach to increase the in-field performance of superconductors. However, many effective pinning defects can adversely affect the zero field or self-field J c, particularly in cuprate high temperature superconductors. Here, we report the doubling of the self-field J c in FeSe 0.5Te 0.5 films by low temperature oxygen annealing, reaching ~3 MA/cm 2. In-field performance is also dramatically enhanced.more » In conclusion, our results demonstrate that low temperature oxygen annealing is a simple and cost-efficient post-treatment technique which can greatly help to accelerate the potential high field applications of the iron-based superconductors.« less

Doubling the critical current density in superconducting FeSe 0.5Te 0.5 thin films by low temperature oxygen annealing

DOE PAGES

Zhang, Cheng; Si, Weidong; Li, Qiang

2016-11-14

Iron chalcogenide superconducting thin films and coated conductors are attractive for potential high field applications at liquid helium temperature for their high critical current densities J c, low anisotropies, and relatively strong grain couplings. Embedding flux pinning defects is a general approach to increase the in-field performance of superconductors. However, many effective pinning defects can adversely affect the zero field or self-field J c, particularly in cuprate high temperature superconductors. Here, we report the doubling of the self-field J c in FeSe 0.5Te 0.5 films by low temperature oxygen annealing, reaching ~3 MA/cm 2. In-field performance is also dramatically enhanced.more » In conclusion, our results demonstrate that low temperature oxygen annealing is a simple and cost-efficient post-treatment technique which can greatly help to accelerate the potential high field applications of the iron-based superconductors.« less

Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

PubMed Central

2014-01-01

This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm2/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm2/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing. PMID:25276107

High microwave attenuation performance of planar carbonyl iron particles with orientation of shape anisotropy field

NASA Astrophysics Data System (ADS)

Guo, Cheng; Yang, Zhihong; Shen, Shile; Liang, Juan; Xu, Guoyue

2018-05-01

Planar anisotropy carbonyl iron (PACI) particles were prepared from commercial spherical carbonyl iron particles through a high performance ball-milling technique. The paraffin composites with orientation of shape anisotropy field for these PACI particles were obtained by applying an external magnetic field during the fabrication process. The frequency-dependent complex permeability values of these prepared paraffin composites have been investigated in the frequency range of 1-18 GHz. The results demonstrate that the orientation of shape anisotropy field for these PACI particles can effectively increase the complex permeability and decrease the complex permittivity values. Benefit from the enhancement in the complex permeability and reduction in the complex permittivity, the better impedance matching condition can be obtained and thus the good microwave absorption performance can be achieved for the samples with enough magnetic field orientation time.

Effect of vacuum exhaust pressure on the performance of MHD ducts at high B-field

NASA Technical Reports Server (NTRS)

Smith, J. M.; Morgan, J. L.; Wang, S.-Y.

1982-01-01

The effect of area ratio variation on the performance of a supersonic Hall MHD duct showed that for a given combustion pressure there exists an area ratio below which the power generating region of the duct is shock free and the power output increases linearly with the square of the magnetic field. For area ratios greater than this, a shock forms in the power generating region which moves upstream with increasing magnetic field strength resulting in a less rapid raise in the power output. The shock can be moved downstream by either increasing the combustion pressure or decreasing the exhaust pressure. The influence of these effects upon duct performance is presented in this paper.

Effect of vacuum exhaust pressure on the performance of MHD ducts at high B-field

NASA Technical Reports Server (NTRS)

Smith, J. M.; Morgan, J. L.; Wang, S. Y.

1982-01-01

The effect of area ratio variation on the performance of a supersonic Hall MHD duct is investigated. Results indicate that for a given combustion pressure there exists an area ratio below which the power generating region of the duct is shock free and the power output increases linearly with the square of the magnetic field. For area ratios greater than this, a shock forms in the power generating region which moves upstream with increasing magnetic field strength resulting in a less rapid raise in the power output. The shock can be moved downstream by either increasing the combustion pressure of decreasing the exhaust pressure. The influence of these effects upon duct performance is presented.

Doping Polymer Semiconductors by Organic Salts: Toward High-Performance Solution-Processed Organic Field-Effect Transistors.

PubMed

Hu, Yuanyuan; Rengert, Zachary D; McDowell, Caitlin; Ford, Michael J; Wang, Ming; Karki, Akchheta; Lill, Alexander T; Bazan, Guillermo C; Nguyen, Thuc-Quyen

2018-04-24

Solution-processed organic field-effect transistors (OFETs) were fabricated with the addition of an organic salt, trityl tetrakis(pentafluorophenyl)borate (TrTPFB), into thin films of donor-acceptor copolymer semiconductors. The performance of OFETs is significantly enhanced after the organic salt is incorporated. TrTPFB is confirmed to p-dope the organic semiconductors used in this study, and the doping efficiency as well as doping physics was investigated. In addition, systematic electrical and structural characterizations reveal how the doping enhances the performance of OFETs. Furthermore, it is shown that this organic salt doping method is feasible for both p- and n-doping by using different organic salts and, thus, can be utilized to achieve high-performance OFETs and organic complementary circuits.

Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs).

PubMed

Choi, Woo Young; Lee, Hyun Kook

2016-01-01

The steady scaling-down of semiconductor device for improving performance has been the most important issue among researchers. Recently, as low-power consumption becomes one of the most important requirements, there have been many researches about novel devices for low-power consumption. Though scaling supply voltage is the most effective way for low-power consumption, performance degradation is occurred for metal-oxide-semiconductor field-effect transistors (MOSFETs) when supply voltage is reduced because subthreshold swing (SS) of MOSFETs cannot be lower than 60 mV/dec. Thus, in this thesis, hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) are investigated as one of the most promising alternatives to MOSFETs. By replacing source-side gate insulator with a high- k material, HG TFETs show higher on-current, suppressed ambipolar current and lower SS than conventional TFETs. Device design optimization through simulation was performed and fabrication based on simulation demonstrated that performance of HG TFETs were better than that of conventional TFETs. Especially, enlargement of gate insulator thickness while etching gate insulator at the source side was improved by introducing HF vapor etch process. In addition, the proposed HG TFETs showed higher performance than our previous results by changing structure of sidewall spacer by high- k etching process.

Biologically templated assembly of hybrid semiconducting nanomesh for high performance field effect transistors and sensors

NASA Astrophysics Data System (ADS)

Byeon, Hye-Hyeon; Lee, Seung-Woo; Lee, Eun-Hee; Kim, Woong; Yi, Hyunjung

2016-10-01

Delicately assembled composites of semiconducting nanomaterials and biological materials provide an attractive interface for emerging applications, such as chemical/biological sensors, wearable health monitoring devices, and therapeutic agent releasing devices. The nanostructure of composites as a channel and a sensing material plays a critical role in the performance of field effect transistors (FETs). Therefore, it is highly desirable to prepare elaborate composite that can allow the fabrication of high performance FETs and also provide high sensitivity and selectivity in detecting specific chemical/biological targets. In this work, we demonstrate that high performance FETs can be fabricated with a hydrodynamically assembled composite, a semiconducting nanomesh, of semiconducting single-walled carbon nanotubes (S-SWNTs) and a genetically engineered M13 phage to show strong binding affinity toward SWNTs. The semiconducting nanomesh enables a high on/off ratio (~104) of FETs. We also show that the threshold voltage and the channel current of the nanomesh FETs are sensitive to the change of the M13 phage surface charge. This biological gate effect of the phage enables the detection of biologically important molecules such as dopamine and bisphenol A using nanomesh-based FETs. Our results provide a new insight for the preparation of composite material platform for highly controllable bio/electronics interfaces.

25th anniversary article: key points for high-mobility organic field-effect transistors.

PubMed

Dong, Huanli; Fu, Xiaolong; Liu, Jie; Wang, Zongrui; Hu, Wenping

2013-11-20

Remarkable progress has been made in developing high performance organic field-effect transistors (OFETs) and the mobility of OFETs has been approaching the values of polycrystalline silicon, meeting the requirements of various electronic applications from electronic papers to integrated circuits. In this review, the key points for development of high mobility OFETs are highlighted from aspects of molecular engineering, process engineering and interface engineering. The importance of other factors, such as impurities and testing conditions is also addressed. Finally, the current challenges in this field for practical applications of OFETs are further discussed. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of an applied magnetic field on the performance of a SIS receiver near 300 GHz

NASA Technical Reports Server (NTRS)

Mallison, W. H.; De Zafra, R. L.

1992-01-01

A superconductor-insulator-superconductor (SIS) receiver has been successfully constructed and tested for operation at 265 - 280 GHz using 1 micron/sq area Nb-AlO(x)-Nb tunnel junctions fabricated at Stony Brook. The best performance to date is a double sideband (DSB) receiver noise temperature of 129 K at 278 GHz. It is found that suppression of the Josephson pair currents with a magnetic field is essential for good performance and a stable dc bias point. Fields as high as 280 gauss have been used with no degradation of mixing performance. The improvement in the intermediate frequency output stability with progressively increasing magnetic fields is illustrated.

Investigation of possible causes for human-performance degradation during microgravity flight

NASA Technical Reports Server (NTRS)

Schroeder, James E.; Tuttle, Megan L.

1992-01-01

The results of the first year of a three year study of the effects of microgravity on human performance are given. Test results show support for the hypothesis that the effects of microgravity can be studied indirectly on Earth by measuring performance in an altered gravitational field. The hypothesis was that an altered gravitational field could disrupt performance on previously automated behaviors if gravity was a critical part of the stimulus complex controlling those behaviors. In addition, it was proposed that performance on secondary cognitive tasks would also degrade, especially if the subject was provided feedback about degradation on the previously automated task. In the initial experimental test of these hypotheses, there was little statistical support. However, when subjects were categorized as high or low in automated behavior, results for the former group supported the hypotheses. The predicted interaction between body orientation and level of workload in their joint effect on performance in the secondary cognitive task was significant for the group high in automatized behavior and receiving feedback, but no such interventions were found for the group high in automatized behavior but not receiving feedback, or the group low in automatized behavior.

25th Anniversary Article: Organic Field-Effect Transistors: The Path Beyond Amorphous Silicon

PubMed Central

Sirringhaus, Henning

2014-01-01

Over the past 25 years, organic field-effect transistors (OFETs) have witnessed impressive improvements in materials performance by 3–4 orders of magnitude, and many of the key materials discoveries have been published in Advanced Materials. This includes some of the most recent demonstrations of organic field-effect transistors with performance that clearly exceeds that of benchmark amorphous silicon-based devices. In this article, state-of-the-art in OFETs are reviewed in light of requirements for demanding future applications, in particular active-matrix addressing for flexible organic light-emitting diode (OLED) displays. An overview is provided over both small molecule and conjugated polymer materials for which field-effect mobilities exceeding > 1 cm2 V–1 s–1 have been reported. Current understanding is also reviewed of their charge transport physics that allows reaching such unexpectedly high mobilities in these weakly van der Waals bonded and structurally comparatively disordered materials with a view towards understanding the potential for further improvement in performance in the future. PMID:24443057

Angular-Shaped Naphthalene Bis(1,5-diamide-2,6-diylidene)malononitrile for High-Performance, Air-Stable N-Type Organic Field-Effect Transistors.

PubMed

Dhondge, Attrimuni P; Tsai, Pei-Chung; Nien, Chiao-Yun; Xu, Wei-Yu; Chen, Po-Ming; Hsu, Yu-Hung; Li, Kan-Wei; Yen, Feng-Ming; Tseng, Shin-Lun; Chang, Yu-Chang; Chen, Henry J H; Kuo, Ming-Yu

2018-05-04

The synthesis, characterization, and application of two angular-shaped naphthalene bis(1,5-diamide-2,6-diylidene)malononitriles (NBAMs) as high-performance air-stable n-type organic field effect transistor (OFET) materials are reported. NBAM derivatives exhibit deep lowest-unoccupied molecular orbital (LUMO) levels, suitable for air-stable n-type OFETs. The OFET device based on NBAM-EH fabricated by vapor deposition exhibits a maximum electron mobility of 0.63 cm 2 V -1 s -1 in air with an on/off current ratio ( I on / I off ) of 10 5 .

Analysis of electric field distribution in GaAs metal-semiconductor field effect transistor with a field-modulating plate

NASA Astrophysics Data System (ADS)

Hori, Yasuko; Kuzuhara, Masaaki; Ando, Yuji; Mizuta, Masashi

2000-04-01

Electric field distribution in the channel of a field effect transistor (FET) with a field-modulating plate (FP) has been theoretically investigated using a two-dimensional ensemble Monte Carlo simulation. This analysis revealed that the introduction of FP is effective in canceling the influence of surface traps under forward bias conditions and in reducing the electric field intensity at the drain side of the gate edge under pinch-off bias conditions. This study also found that a partial overlap of the high-field region under the gate and that at the FP electrode is important for reducing the electric field intensity. The optimized metal-semiconductor FET with FP (FPFET) (LGF˜0.2 μm) exhibited a much lower peak electric field intensity than a conventional metal-semiconductor FET. Based on these numerically calculated results, we have proposed a design procedure to optimize the power FPFET structure with extremely high breakdown voltages while maintaining reasonable gain performance.

Ultra-high gain diffusion-driven organic transistor

PubMed Central

Torricelli, Fabrizio; Colalongo, Luigi; Raiteri, Daniele; Kovács-Vajna, Zsolt Miklós; Cantatore, Eugenio

2016-01-01

Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show a new organic field-effect transistor architecture with a gain larger than 700. This is the highest gain ever reported for organic field-effect transistors. In the proposed organic field-effect transistor, the charge injection and extraction at the metal–semiconductor contacts are driven by the charge diffusion. The ideal conditions of ohmic contacts with negligible contact resistance and flat current saturation are demonstrated. The approach is general and can be extended to any thin-film technology opening unprecedented opportunities for the development of high-performance flexible electronics. PMID:26829567

Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

NASA Astrophysics Data System (ADS)

Krishnamoorthy, Sriram; Xia, Zhanbo; Joishi, Chandan; Zhang, Yuewei; McGlone, Joe; Johnson, Jared; Brenner, Mark; Arehart, Aaron R.; Hwang, Jinwoo; Lodha, Saurabh; Rajan, Siddharth

2017-07-01

Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the β-(Al0.2Ga0.8)2O3/Ga2O3 material system could enable heterojunction devices for high performance electronics.

Ferroelectric-Driven Performance Enhancement of Graphene Field-Effect Transistors Based on Vertical Tunneling Heterostructures.

PubMed

Yuan, Shuoguo; Yang, Zhibin; Xie, Chao; Yan, Feng; Dai, Jiyan; Lau, Shu Ping; Chan, Helen L W; Hao, Jianhua

2016-12-01

A vertical graphene heterostructure field-effect transistor (VGHFET) using an ultrathin ferroelectric film as a tunnel barrier is developed. The heterostructure is capable of providing new degrees of tunability and functionality via coupling between the ferroelectricity and the tunnel current of the VGHFET, which results in a high-performance device. The results pave the way for developing novel atomic-scale 2D heterostructures and devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Generalized reduced rank latent factor regression for high dimensional tensor fields, and neuroimaging-genetic applications

PubMed Central

Tao, Chenyang; Nichols, Thomas E.; Hua, Xue; Ching, Christopher R.K.; Rolls, Edmund T.; Thompson, Paul M.; Feng, Jianfeng

2017-01-01

We propose a generalized reduced rank latent factor regression model (GRRLF) for the analysis of tensor field responses and high dimensional covariates. The model is motivated by the need from imaging-genetic studies to identify genetic variants that are associated with brain imaging phenotypes, often in the form of high dimensional tensor fields. GRRLF identifies from the structure in the data the effective dimensionality of the data, and then jointly performs dimension reduction of the covariates, dynamic identification of latent factors, and nonparametric estimation of both covariate and latent response fields. After accounting for the latent and covariate effects, GRLLF performs a nonparametric test on the remaining factor of interest. GRRLF provides a better factorization of the signals compared with common solutions, and is less susceptible to overfitting because it exploits the effective dimensionality. The generality and the flexibility of GRRLF also allow various statistical models to be handled in a unified framework and solutions can be efficiently computed. Within the field of neuroimaging, it improves the sensitivity for weak signals and is a promising alternative to existing approaches. The operation of the framework is demonstrated with both synthetic datasets and a real-world neuroimaging example in which the effects of a set of genes on the structure of the brain at the voxel level were measured, and the results compared favorably with those from existing approaches. PMID:27666385

Laser-driven Ion Acceleration using Nanodiamonds

NASA Astrophysics Data System (ADS)

D'Hauthuille, Luc; Nguyen, Tam; Dollar, Franklin

2016-10-01

Interactions of high-intensity lasers with mass-limited nanoparticles enable the generation of extremely high electric fields. These fields accelerate ions, which has applications in nuclear medicine, high brightness radiography, as well as fast ignition for inertial confinement fusion. Previous studies have been performed with ensembles of nanoparticles, but this obscures the physics of the interaction due to the wide array of variables in the interaction. The work presented here looks instead at the interactions of a high intensity short pulse laser with an isolated nanodiamond. Specifically, we studied the effect of nanoparticle size and intensity of the laser on the interaction. A novel target scheme was developed to isolate the nanodiamond. Particle-in-cell simulations were performed using the EPOCH framework to show the sheath fields and resulting energetic ion beams.

Development of high-performance printed organic field-effect transistors and integrated circuits.

PubMed

Xu, Yong; Liu, Chuan; Khim, Dongyoon; Noh, Yong-Young

2015-10-28

Organic electronics is regarded as an important branch of future microelectronics especially suited for large-area, flexible, transparent, and green devices, with their low cost being a key benefit. Organic field-effect transistors (OFETs), the primary building blocks of numerous expected applications, have been intensively studied, and considerable progress has recently been made. However, there are still a number of challenges to the realization of high-performance OFETs and integrated circuits (ICs) using printing technologies. Therefore, in this perspective article, we investigate the main issues concerning developing high-performance printed OFETs and ICs and seek strategies for further improvement. Unlike many other studies in the literature that deal with organic semiconductors (OSCs), printing technology, and device physics, our study commences with a detailed examination of OFET performance parameters (e.g., carrier mobility, threshold voltage, and contact resistance) by which the related challenges and potential solutions to performance development are inspected. While keeping this complete understanding of device performance in mind, we check the printed OFETs' components one by one and explore the possibility of performance improvement regarding device physics, material engineering, processing procedure, and printing technology. Finally, we analyze the performance of various organic ICs and discuss ways to optimize OFET characteristics and thus develop high-performance printed ICs for broad practical applications.

High performance printed oxide field-effect transistors processed using photonic curing.

PubMed

Garlapati, Suresh Kumar; Marques, Gabriel Cadilha; Gebauer, Julia Susanne; Dehm, Simone; Bruns, Michael; Winterer, Markus; Tahoori, Mehdi Baradaran; Aghassi-Hagmann, Jasmin; Hahn, Horst; Dasgupta, Subho

2018-06-08

Oxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed/printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as low process temperatures and short exposure time and thereby, high throughput compatibility. Here, using dissimilar photonic curing concepts (UV-visible light and UV-laser), we demonstrate facile fabrication of high performance In 2 O 3 field-effect transistors (FETs). Beside the processing related issues (temperature, time etc.), the other known limitation of oxide electronics is the lack of high performance p-type semiconductors, which can be bypassed using unipolar logics from high mobility n-type semiconductors alone. Interestingly, here we have found that our chosen distinct photonic curing methods can offer a large variation in threshold voltage, when they are fabricated from the same precursor ink. Consequently, both depletion and enhancement-mode devices have been achieved which can be used as the pull-up and pull-down transistors in unipolar inverters. The present device fabrication recipe demonstrates fast processing of low operation voltage, high performance FETs with large threshold voltage tunability.

High performance printed oxide field-effect transistors processed using photonic curing

NASA Astrophysics Data System (ADS)

Garlapati, Suresh Kumar; Cadilha Marques, Gabriel; Gebauer, Julia Susanne; Dehm, Simone; Bruns, Michael; Winterer, Markus; Baradaran Tahoori, Mehdi; Aghassi-Hagmann, Jasmin; Hahn, Horst; Dasgupta, Subho

2018-06-01

Oxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed/printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as low process temperatures and short exposure time and thereby, high throughput compatibility. Here, using dissimilar photonic curing concepts (UV–visible light and UV-laser), we demonstrate facile fabrication of high performance In2O3 field-effect transistors (FETs). Beside the processing related issues (temperature, time etc.), the other known limitation of oxide electronics is the lack of high performance p-type semiconductors, which can be bypassed using unipolar logics from high mobility n-type semiconductors alone. Interestingly, here we have found that our chosen distinct photonic curing methods can offer a large variation in threshold voltage, when they are fabricated from the same precursor ink. Consequently, both depletion and enhancement-mode devices have been achieved which can be used as the pull-up and pull-down transistors in unipolar inverters. The present device fabrication recipe demonstrates fast processing of low operation voltage, high performance FETs with large threshold voltage tunability.

Passivation of GaSb using molecular beam epitaxy Y{sub 2}O{sub 3} to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chu, R. L.; Chiang, T. H.; Hsueh, W. J.

2014-11-03

Molecular beam epitaxy deposited rare-earth oxide of Y{sub 2}O{sub 3} has effectively passivated GaSb, leading to low interfacial trap densities of (1–4) × 10{sup 12 }cm{sup −2} eV{sup −1} across the energy bandgap of GaSb. A high saturation drain current density of 130 μA/μm, a peak transconductance of 90 μS/μm, a low subthreshold slope of 147 mV/decade, and a peak field-effect hole mobility of 200 cm{sup 2}/V-s were obtained in 1 μm-gate-length self-aligned inversion-channel GaSb p-Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs). In this work, high-κ/GaSb interfacial properties were better in samples with a high substrate temperature of 200 °C than in those with high κ's deposited at room temperature, in terms of themore » interfacial electrical properties, particularly, the reduction of interfacial trap densities near the conduction band and the MOSFET device performance.« less

Effect of grain boundary on the field-effect mobility of microrod single crystal organic transistors.

PubMed

Kim, Jaekyun; Kang, Jingu; Cho, Sangho; Yoo, Byungwook; Kim, Yong-Hoon; Park, Sung Kyu

2014-11-01

High-performance microrod single crystal organic transistors based on a p-type 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) semiconductor are fabricated and the effects of grain boundaries on the carrier transport have been investigated. The spin-coating of C8-BTBT and subsequent solvent vapor annealing process enabled the formation of organic single crystals with high aspect ratio in the range of 10 - 20. It was found that the organic field-effect transistors (OFETs) based on these single crystals yield a field-effect mobility and an on/off current ratio of 8.04 cm2/Vs and > 10(5), respectively. However, single crystal OFETs with a kink, in which two single crystals are fused together, exhibited a noticeable drop of field-effect mobility, and we claim that this phenomenon results from the carrier scattering at the grain boundary.

Solution-Processed Donor-Acceptor Polymer Nanowire Network Semiconductors For High-Performance Field-Effect Transistors

PubMed Central

Lei, Yanlian; Deng, Ping; Li, Jun; Lin, Ming; Zhu, Furong; Ng, Tsz-Wai; Lee, Chun-Sing; Ong, Beng S.

2016-01-01

Organic field-effect transistors (OFETs) represent a low-cost transistor technology for creating next-generation large-area, flexible and ultra-low-cost electronics. Conjugated electron donor-acceptor (D-A) polymers have surfaced as ideal channel semiconductor candidates for OFETs. However, high-molecular weight (MW) D-A polymer semiconductors, which offer high field-effect mobility, generally suffer from processing complications due to limited solubility. Conversely, the readily soluble, low-MW D-A polymers give low mobility. We report herein a facile solution process which transformed a lower-MW, low-mobility diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (I) into a high crystalline order and high-mobility semiconductor for OFETs applications. The process involved solution fabrication of a channel semiconductor film from a lower-MW (I) and polystyrene blends. With the help of cooperative shifting motion of polystyrene chain segments, (I) readily self-assembled and crystallized out in the polystyrene matrix as an interpenetrating, nanowire semiconductor network, providing significantly enhanced mobility (over 8 cm2V−1s−1), on/off ratio (107), and other desirable field-effect properties that meet impactful OFET application requirements. PMID:27091315

Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance

DOEpatents

Zolper, John C.; Sherwin, Marc E.; Baca, Albert G.

2000-01-01

A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is formed and a single anneal at moderate temperature is then performed. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions co-implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region of the Si-channel tail, but does not contribute substantially to the acceptor concentration in the buried p region. As a result, the invention provides for improved field effect semiconductor and related devices with enhancement of both DC and high-frequency performance.

Strategies for Improving the Performance of Sensors Based on Organic Field-Effect Transistors.

PubMed

Wu, Xiaohan; Mao, Shun; Chen, Junhong; Huang, Jia

2018-04-01

Organic semiconductors (OSCs) have been extensively studied as sensing channel materials in field-effect transistors due to their unique charge transport properties. Stimulation caused by its environmental conditions can readily change the charge-carrier density and mobility of OSCs. Organic field-effect transistors (OFETs) can act as both signal transducers and signal amplifiers, which greatly simplifies the device structure. Over the past decades, various sensors based on OFETs have been developed, including physical sensors, chemical sensors, biosensors, and integrated sensor arrays with advanced functionalities. However, the performance of OFET-based sensors still needs to be improved to meet the requirements from various practical applications, such as high sensitivity, high selectivity, and rapid response speed. Tailoring molecular structures and micro/nanofilm structures of OSCs is a vital strategy for achieving better sensing performance. Modification of the dielectric layer and the semiconductor/dielectric interface is another approach for improving the sensor performance. Moreover, advanced sensory functionalities have been achieved by developing integrated device arrays. Here, a brief review of strategies used for improving the performance of OFET sensors is presented, which is expected to inspire and provide guidance for the design of future OFET sensors for various specific and practical applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The Effect of Subconscious Performance Goals on Academic Performance

ERIC Educational Resources Information Center

Bipp, Tanja; Kleingeld, Ad; van Mierlo, Heleen; Kunde, Wilfried

2017-01-01

We investigated the impact of subconscious goals on academic performance in two field experiments. We show that unobtrusive priming of goals with regard to achievement motivation by means of a photograph improves performance in different educational contexts. High-school students who were exposed to an achievement-related photograph achieved…

The effect of massage on acceleration and sprint performance in track & field athletes.

PubMed

Moran, Ryan N; Hauth, John M; Rabena, Robert

2018-02-01

To examine the acute effects of pre-competition massage on acceleration and sprint performance in collegiate track and field athletes. Seventeen collegiate male (n = 9) and female (N = 8) track and field athletes participated in the study. Athletes were assigned to a counterbalanced, repeated measures designed experiment testing four treatment conditions of a pre-competition massage, dynamic warm-up, combination of a massage and warm-up, and a placebo ultrasound. The reliability between treatments was very high (ICC range: 0.94-0.98) and displayed a high internal consistency (Cronbach α = 0.96). Inter-item correlations for treatments were strong at all time intervals (20-m r = 0.74-0.90; 30-m r = 0.87-0.95; 60-m r = 0.88-0.95). There were no significant differences between the four treatments and performance (p = 0.70). Massage decreased 60-meter sprint performance in comparison to the traditional warm-up, although the combination of the massage and warm-up appeared to have no greater difference than the warm-up alone. Massage prior to competition remains questionable due to a lack of effectiveness in improving sprint performance. Further, pre-competition massage may not be more effective as a pre-event modality, over a traditional warm-up. Copyright © 2017 Elsevier Ltd. All rights reserved.

Field Performance of High-Quality and Standard Northern Red Oak Seedlings in Tennessee

Treesearch

David S. Buckley

2002-01-01

First-year performance of high-quality (HQ), high-quality cull (HQC) and standard (ST) northern red oak (Quercus rubra) nursery seedlings was compared in a study established in a recent clearcut in mid-March, 2000. Objectives were to test effects of 1) seedling type, 2) planting treatment, and 3) control of competitors on the growth, browsing, and...

Effects of Field of View and Visual Complexity on Virtual Reality Training Effectiveness for a Visual Scanning Task

DOE PAGES

Ragan, Eric D.; Bowman, Doug A.; Kopper, Regis; ...

2015-02-13

Virtual reality training systems are commonly used in a variety of domains, and it is important to understand how the realism of a training simulation influences training effectiveness. The paper presents a framework for evaluating the effects of virtual reality fidelity based on an analysis of a simulation’s display, interaction, and scenario components. Following this framework, we conducted a controlled experiment to test the effects of fidelity on training effectiveness for a visual scanning task. The experiment varied the levels of field of view and visual realism during a training phase and then evaluated scanning performance with the simulator’s highestmore » level of fidelity. To assess scanning performance, we measured target detection and adherence to a prescribed strategy. The results show that both field of view and visual realism significantly affected target detection during training; higher field of view led to better performance and higher visual realism worsened performance. Additionally, the level of visual realism during training significantly affected learning of the prescribed visual scanning strategy, providing evidence that high visual realism was important for learning the technique. The results also demonstrate that task performance during training was not always a sufficient measure of mastery of an instructed technique. That is, if learning a prescribed strategy or skill is the goal of a training exercise, performance in a simulation may not be an appropriate indicator of effectiveness outside of training—evaluation in a more realistic setting may be necessary.« less

A novel high-performance high-frequency SOI MESFET by the damped electric field

NASA Astrophysics Data System (ADS)

Orouji, Ali A.; Khayatian, Ahmad; Keshavarzi, Parviz

2016-06-01

In this paper, we introduce a novel silicon-on-insulator (SOI) metal-semiconductor field-effect-transistor (MESFET) using the damped electric field (DEF). The proposed structure is geometrically symmetric and compatible with common SOI CMOS fabrication processes. It has two additional oxide regions under the side gates in order to improve DC and RF characteristics of the DEF structure due to changes in the electrical potential, the electrical field distributions, and rearrangement of the charge carriers. Improvement of device performance is investigated by two-dimensional and two-carrier simulation of fundamental parameters such as breakdown voltage (VBR), drain current (ID), output power density (Pmax), transconductance (gm), gate-drain and gate-source capacitances, cut-off frequency (fT), unilateral power gain (U), current gain (h21), maximum available gain (MAG), and minimum noise figure (Fmin). The results show that proposed structure operates with higher performances in comparison with the similar conventional SOI structure.

Accurate on-chip measurement of the Seebeck coefficient of high mobility small molecule organic semiconductors

NASA Astrophysics Data System (ADS)

Warwick, C. N.; Venkateshvaran, D.; Sirringhaus, H.

2015-09-01

We present measurements of the Seebeck coefficient in two high mobility organic small molecules, 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) and 2,9-didecyl-dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C10-DNTT). The measurements are performed in a field effect transistor structure with high field effect mobilities of approximately 3 cm2/V s. This allows us to observe both the charge concentration and temperature dependence of the Seebeck coefficient. We find a strong logarithmic dependence upon charge concentration and a temperature dependence within the measurement uncertainty. Despite performing the measurements on highly polycrystalline evaporated films, we see an agreement in the Seebeck coefficient with modelled values from Shi et al. [Chem. Mater. 26, 2669 (2014)] at high charge concentrations. We attribute deviations from the model at lower charge concentrations to charge trapping.

High-Performance, Solution-Processed Quantum Dot Light-Emitting Field-Effect Transistors with a Scandium-Incorporated Indium Oxide Semiconductor.

PubMed

He, Penghui; Jiang, Congbiao; Lan, Linfeng; Sun, Sheng; Li, Yizhi; Gao, Peixiong; Zhang, Peng; Dai, Xingqiang; Wang, Jian; Peng, Junbiao; Cao, Yong

2018-05-22

Light-emitting field-effect transistors (LEFETs) have attained great attention due to their special characteristics of both the switching capacity and the electroluminescence capacity. However, high-performance LEFETs with high mobility, high brightness, and high efficiency have not been realized due to the difficulty in developing high electron and hole mobility materials with suitable band structures. In this paper, quantum dot hybrid LEFETs (QD-HLEFETs) combining high-luminous-efficiency quantum dots (QDs) and a solution-processed scandium-incorporated indium oxide (Sc:In 2 O 3 ) semiconductor were demonstrated. The red QD-HLEFET showed high electrical and optical performance with an electron mobility of 0.8 cm 2 V -1 s -1 , a maximum brightness of 13 400 cd/m 2 , and a maximum external quantum efficiency of 8.7%. The high performance of the QD-HLEFET is attributed to the good energy band matching between Sc:In 2 O 3 and QDs and the balanced hole and electron injection (less exciton nonradiative recombination). In addition, incorporation of Sc into In 2 O 3 can suppress the oxygen vacancy and free carrier generation and brings about excellent current and optical modulation (the on/off current ratio is 10 5 and the on/off brightness ratio is 10 6 ).

Human dopamine receptor nanovesicles for gate-potential modulators in high-performance field-effect transistor biosensors

NASA Astrophysics Data System (ADS)

Park, Seon Joo; Song, Hyun Seok; Kwon, Oh Seok; Chung, Ji Hyun; Lee, Seung Hwan; An, Ji Hyun; Ahn, Sae Ryun; Lee, Ji Eun; Yoon, Hyeonseok; Park, Tai Hyun; Jang, Jyongsik

2014-03-01

The development of molecular detection that allows rapid responses with high sensitivity and selectivity remains challenging. Herein, we demonstrate the strategy of novel bio-nanotechnology to successfully fabricate high-performance dopamine (DA) biosensor using DA Receptor-containing uniform-particle-shaped Nanovesicles-immobilized Carboxylated poly(3,4-ethylenedioxythiophene) (CPEDOT) NTs (DRNCNs). DA molecules are commonly associated with serious diseases, such as Parkinson's and Alzheimer's diseases. For the first time, nanovesicles containing a human DA receptor D1 (hDRD1) were successfully constructed from HEK-293 cells, stably expressing hDRD1. The nanovesicles containing hDRD1 as gate-potential modulator on the conducting polymer (CP) nanomaterial transistors provided high-performance responses to DA molecule owing to their uniform, monodispersive morphologies and outstanding discrimination ability. Specifically, the DRNCNs were integrated into a liquid-ion gated field-effect transistor (FET) system via immobilization and attachment processes, leading to high sensitivity and excellent selectivity toward DA in liquid state. Unprecedentedly, the minimum detectable level (MDL) from the field-induced DA responses was as low as 10 pM in real- time, which is 10 times more sensitive than that of previously reported CP based-DA biosensors. Moreover, the FET-type DRNCN biosensor had a rapid response time (<1 s) and showed excellent selectivity in human serum.

The effect of a helicopter on DC fields and ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harris, E.L.; Rindall, B.D.; Tarko, N.J.

1993-10-01

When a plan was initiated to utilize a helicopter to perform work on an energized, high voltage dc transmission line by bonding the helicopter to the conductor, it was necessary to determine what effect, if any, the helicopter would have on the dc fields and ions. In addition, it was necessary to determine the possible effect on helicopter instrumentation and communications. A test site and research facility at Lundar, Manitoba, Canada, provided the ideal location for making these tests. As a result, the information obtained determined that a helicopter-airborne platform could safely be used to perform the work.

Highly soluble [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives for high-performance, solution-processed organic field-effect transistors.

PubMed

Ebata, Hideaki; Izawa, Takafumi; Miyazaki, Eigo; Takimiya, Kazuo; Ikeda, Masaaki; Kuwabara, Hirokazu; Yui, Tatsuto

2007-12-26

2,7-Dialkyl[1]benzothieno[3,2-b]benzothiophenes were tested as solution-processible molecular semiconductors. Thin films of the organic semiconductors deposited on Si/SiO2 substrates by spin coating have well-ordered structures as confirmed by XRD analysis. Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility higher than 1.0 cm2 V-1 s-1 and Ion/Ioff of approximately 10(7).

Ambipolar pentacene field-effect transistor with double-layer organic insulator

NASA Astrophysics Data System (ADS)

Kwak, Jeong-Hun; Baek, Heume-Il; Lee, Changhee

2006-08-01

Ambipolar conduction in organic field-effect transistor is very important feature to achieve organic CMOS circuitry. We fabricated an ambipolar pentacene field-effect transistors consisted of gold source-drain electrodes and double-layered PMMA (Polymethylmethacrylate) / PVA (Polyvinyl Alcohol) organic insulator on the ITO(Indium-tin-oxide)-patterned glass substrate. These top-contact geometry field-effect transistors were fabricated in the vacuum of 10 -6 Torr and minimally exposed to atmosphere before its measurement and characterized in the vacuum condition. Our device showed reasonable p-type characteristics of field-effect hole mobility of 0.2-0.9 cm2/Vs and the current ON/OFF ratio of about 10 6 compared to prior reports with similar configurations. For the n-type characteristics, field-effect electron mobility of 0.004-0.008 cm2/Vs and the current ON/OFF ratio of about 10 3 were measured, which is relatively high performance for the n-type conduction of pentacene field-effect transistors. We attributed these ambipolar properties mainly to the hydroxyl-free PMMA insulator interface with the pentacene active layer. In addition, an increased insulator capacitance due to double-layer insulator structure with high-k PVA layer also helped us to observe relatively good n-type characteristics.

Bay-annulated indigo (BAI) as an excellent electron accepting building block for high performance organic semiconductors

DOEpatents

Liu, Yi; He, Bo; Pun, Andrew

2015-11-24

A novel electron acceptor based on bay-annulated indigo (BAI) was synthesized and used for the preparation of a series of high performance donor-acceptor small molecules and polymers. The resulting materials possess low-lying LUMO energy level and small HOMO-LUMO gaps, while their films exhibited high crystallinity upon thermal treatment, commensurate with high field effect mobilities and ambipolar transfer characteristics.

Bay-annulated indigo (BAI) as an excellent electron accepting building block for high performance organic semiconductors

DOEpatents

Liu, Yi; He, Bo; Pun, Andrew

2016-04-19

A novel electron acceptor based on bay-annulated indigo (BAI) was synthesized and used for the preparation of a series of high performance donor-acceptor small molecules and polymers. The resulting materials possess low-lying LUMO energy level and small HOMO-LUMO gaps, while their films exhibited high crystallinity upon thermal treatment, commensurate with high field effect mobilities and ambipolar transfer characteristics.

Fringing-field dielectrophoretic assembly of ultrahigh-density semiconducting nanotube arrays with a self-limited pitch

NASA Astrophysics Data System (ADS)

Cao, Qing; Han, Shu-Jen; Tulevski, George S.

2014-09-01

One key challenge of realizing practical high-performance electronic devices based on single-walled carbon nanotubes is to produce electronically pure nanotube arrays with both a minuscule and uniform inter-tube pitch for sufficient device-packing density and homogeneity. Here we develop a method in which the alternating voltage-fringing electric field formed between surface microelectrodes and the substrate is utilized to assemble semiconducting nanotubes into well-aligned, ultrahigh-density and submonolayered arrays, with a consistent pitch as small as 21±6 nm determined by a self-limiting mechanism, based on the unique field focusing and screening effects of the fringing field. Field-effect transistors based on such nanotube arrays exhibit record high device transconductance (>50 μS μm-1) and decent on current per nanotube (~1 μA per tube) together with high on/off ratios at a drain bias of -1 V.

Field Performance of Photovoltaic Systems in the Tucson Desert

NASA Astrophysics Data System (ADS)

Orsburn, Sean; Brooks, Adria; Cormode, Daniel; Greenberg, James; Hardesty, Garrett; Lonij, Vincent; Salhab, Anas; St. Germaine, Tyler; Torres, Gabe; Cronin, Alexander

2011-10-01

At the Tucson Electric Power (TEP) solar test yard, over 20 different grid-connected photovoltaic (PV) systems are being tested. The goal at the TEP solar test yard is to measure and model real-world performance of PV systems and to benchmark new technologies such as holographic concentrators. By studying voltage and current produced by the PV systems as a function of incident irradiance, and module temperature, we can compare our measurements of field-performance (in a harsh desert environment) to manufacturer specifications (determined under laboratory conditions). In order to measure high-voltage and high-current signals, we designed and built reliable, accurate sensors that can handle extreme desert temperatures. We will present several benchmarks of sensors in a controlled environment, including shunt resistors and Hall-effect current sensors, to determine temperature drift and accuracy. Finally we will present preliminary field measurements of PV performance for several different PV technologies.

Effects of 60-Heartz electric and magnetic fields on implanted cardiac pacemakers. Final report. [Hazards of power transmission line frequencies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bridges, J.E.; Frazier, M.J.

1979-09-01

The effects of 60-Hz electric and magnetic fields of exta-high voltage (EHV) transmission lines on the performance of implanted cardiac pacemakers were studied by: (1) in vitro bench tests of a total of thirteen cardiac pacemakers; (2) in vivo tests of six implanted cardiac pacemakers in baboons; and (3) non-hazardous skin measurement tests on four humans. Analytical methods were developed to predict the thresholds of body current and electric fields capable of affecting normal pacemaker operation in humans. The field strengths calculated to alter implanted pacemaker performance were compared with the range of maximum electric and magnetic field strengths amore » human would normally encounter under transmission lines of various voltages. Results indicate that the electric field or body current necessary to alter the normal operation of pacemakers is highly dependent on the type of pacemaker and the location of the implanted electrodes. However, cardiologists have not so far detected harmful effects of pacemaker reversion to the asynchronous mode in current types of pacemakers and with present methods of implantation. Such interferences can be eliminated by using advanced pacemakers less sensitive to 60-Hz voltages or by using implantation lead arrangements less sensitive to body current.« less

25th anniversary article: organic field-effect transistors: the path beyond amorphous silicon.

PubMed

Sirringhaus, Henning

2014-03-05

Over the past 25 years, organic field-effect transistors (OFETs) have witnessed impressive improvements in materials performance by 3-4 orders of magnitude, and many of the key materials discoveries have been published in Advanced Materials. This includes some of the most recent demonstrations of organic field-effect transistors with performance that clearly exceeds that of benchmark amorphous silicon-based devices. In this article, state-of-the-art in OFETs are reviewed in light of requirements for demanding future applications, in particular active-matrix addressing for flexible organic light-emitting diode (OLED) displays. An overview is provided over both small molecule and conjugated polymer materials for which field-effect mobilities exceeding > 1 cm(2) V(-1) s(-1) have been reported. Current understanding is also reviewed of their charge transport physics that allows reaching such unexpectedly high mobilities in these weakly van der Waals bonded and structurally comparatively disordered materials with a view towards understanding the potential for further improvement in performance in the future. © 2014 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of applied magnetic nozzle on an MPD Thruster

NASA Astrophysics Data System (ADS)

Ando, Akira; Izawa, Yuki; Okawa, Kohei; Hashima, Yoko; Watanabe, Hiroshi; Tanaka, Nozomi

2012-10-01

Electric propulsion systems are suitable for long-term mission in space due to its higher specific impulse. An Magneto-Plasma-Dynamic Thruster (MPDT) is one of the promising thrusters of high power electric propulsion systems. It has been reported that the thrust performance of an MPDT can be improved by applying an axial magnetic field on it. In order to investigate the effect of applied field on an MPDT, we have investigated plume plasma parameters and thrust performance in an applied field MPDT. Different types of divergent magnetic nozzle were applied to an MPDT, and thrust was measured using a pendulum type thrust target. Experiments were performed with hydrogen, helium, and argon as propellant gas. Thrust increased with a discharge current up to 6kA and applied magnetic field up to 0.4T. Maximum thrust of 7N was obtained when the peak position of the applied magnetic field was set upstream of the muzzle of the MPDT. The highest thrust performance was obtained with hydrogen gas with divergent magnetic nozzle applied to the MPDT.

Simulation of nonlinear superconducting rf losses derived from characteristic topography of etched and electropolished niobium surfaces

DOE PAGES

Xu, Chen; Reece, Charles E.; Kelley, Michael J.

2016-03-22

A simplified numerical model has been developed to simulate nonlinear superconducting radiofrequency (SRF) losses on Nb surfaces. This study focuses exclusively on excessive surface resistance (R s) losses due to the microscopic topographical magnetic field enhancements. When the enhanced local surface magnetic field exceeds the superconducting critical transition magnetic field H c, small volumes of surface material may become normal conducting and increase the effective surface resistance without inducing a quench. We seek to build an improved quantitative characterization of this qualitative model. Using topographic data from typical buffered chemical polish (BCP)- and electropolish (EP)-treated fine grain niobium, we havemore » estimated the resulting field-dependent losses and extrapolated this model to the implications for cavity performance. The model predictions correspond well to the characteristic BCP versus EP high field Q 0 performance differences for fine grain niobium. Lastly, we describe the algorithm of the model, its limitations, and the effects of this nonlinear loss contribution on SRF cavity performance.« less

High-frequency noise characterization of graphene field effect transistors on SiC substrates

NASA Astrophysics Data System (ADS)

Yu, C.; He, Z. Z.; Song, X. B.; Liu, Q. B.; Dun, S. B.; Han, T. T.; Wang, J. J.; Zhou, C. J.; Guo, J. C.; Lv, Y. J.; Cai, S. J.; Feng, Z. H.

2017-07-01

Considering its high carrier mobility and high saturation velocity, a low-noise amplifier is thought of as being the most attractive analogue application of graphene field-effect transistors. The noise performance of graphene field-effect transistors at frequencies in the K-band remains unknown. In this work, the noise parameters of a graphene transistor are measured from 10 to 26 GHz and noise models are built with the data. The extrinsic minimum noise figure for a graphene transistor reached 1.5 dB, and the intrinsic minimum noise figure was as low as 0.8 dB at a frequency of 10 GHz, which were comparable with the results from tests on Si CMOS and started to approach those for GaAs and InP transistors. Considering the short development time, the current results are a significant step forward for graphene transistors and show their application potential in high-frequency electronics.

Patterning technology for solution-processed organic crystal field-effect transistors

PubMed Central

Li, Yun; Sun, Huabin; Shi, Yi; Tsukagoshi, Kazuhito

2014-01-01

Organic field-effect transistors (OFETs) are fundamental building blocks for various state-of-the-art electronic devices. Solution-processed organic crystals are appreciable materials for these applications because they facilitate large-scale, low-cost fabrication of devices with high performance. Patterning organic crystal transistors into well-defined geometric features is necessary to develop these crystals into practical semiconductors. This review provides an update on recentdevelopment in patterning technology for solution-processed organic crystals and their applications in field-effect transistors. Typical demonstrations are discussed and examined. In particular, our latest research progress on the spin-coating technique from mixture solutions is presented as a promising method to efficiently produce large organic semiconducting crystals on various substrates for high-performance OFETs. This solution-based process also has other excellent advantages, such as phase separation for self-assembled interfaces via one-step spin-coating, self-flattening of rough interfaces, and in situ purification that eliminates the impurity influences. Furthermore, recommendations for future perspectives are presented, and key issues for further development are discussed. PMID:27877656

Dynamic Stark spectroscopic measurements of microwave electric fields inside the plasma near a high-power antenna.

PubMed

Klepper, C C; Isler, R C; Hillairet, J; Martin, E H; Colas, L; Ekedahl, A; Goniche, M; Harris, J H; Hillis, D L; Panayotis, S; Pegourié, B; Lotte, Ph; Colledani, G; Martin, V

2013-05-24

Fully dynamic Stark effect visible spectroscopy was used for the first time to directly measure the local rf electric field in the boundary plasma near a high-power antenna in high-performance, magnetically confined, fusion energy experiment. The measurement was performed in the superconducting tokamak Tore Supra, in the near field of a 1–3 MW, lower-hybrid, 3.7 GHz wave-launch antenna, and combined with modeling of neutral atom transport to estimate the local rf electric field amplitude (as low as 1–2 kV/cm) and direction in this region. The measurement was then shown to be consistent with the predicted values from a 2D full-wave propagation model. Notably the measurement confirmed that the electric field direction deviates substantially from the direction in which it is launched by the waveguides as it penetrates only a few cm radially inward into the plasma from the waveguides, consistent with the model.

Laser range pole field evaluation report

NASA Technical Reports Server (NTRS)

1973-01-01

A field evaluation was made of the laser pole equipment. The basic plan for the evaluation was to expose the equipment to the actual people and environment for which it was intended and determine, through the use of the equipment, its resultant effectivity in terms of improved performance. Results show the equipment performed better than expected in the high elevation clean air of Colorado, and did as well in Tennessee.

Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

2016-06-09

We have successfully synthesized axially doped p- and n-type regions on a single Si nanowire (NW). Diodes and complementary metal-oxide-semiconductor (CMOS) inverter devices using single axial p- and n-channel Si NW field-effect transistors (FETs) were fabricated. We show that the threshold voltages of both p- and n-channel Si NW FETs can be lowered to nearly zero by effectively controlling the doping concentration. Because of the high performance of the p- and n-type Si NW channel FETs, especially with regard to the low threshold voltage, the fabricated NW CMOS inverters have a low operating voltage (<3 V) while maintaining a high voltage gain (∼6) and ultralow static power dissipation (≤0.3 pW) at an input voltage of ±3 V. This result offers a viable way for the fabrication of a high-performance high-density logic circuit using a low-temperature fabrication process, which makes it suitable for flexible electronics.

Space charge effects on the current-voltage characteristics of gated field emitter arrays

NASA Astrophysics Data System (ADS)

Jensen, K. L.; Kodis, M. A.; Murphy, R. A.; Zaidman, E. G.

1997-07-01

Microfabricated field emitter arrays (FEAs) can provide the very high electron current densities required for rf amplifier applications, typically on the order of 100 A/cm2. Determining the dependence of emission current on gate voltage is important for the prediction of emitter performance for device applications. Field emitters use high applied fields to extract current, and therefore, unlike thermionic emitters, the current densities can exceed 103A/cm2 when averaged over an array. At such high current densities, space charge effects (i.e., the influence of charge between cathode and collector on emission) affect the emission process or initiate conditions which can lead to failure mechanisms for field emitters. A simple model of a field emitter will be used to calculate the one-dimensional space charge effects on the emission characteristics by examining two components: charge between the gate and anode, which leads to Child's law, and charge within the FEA unit cell, which gives rise to a field suppression effect which can exist for a single field emitter. The predictions of the analytical model are compared with recent experimental measurements designed to assess space charge effects and predict the onset of gate current. It is shown that negative convexity on a Fowler-Nordheim plot of Ianode(Vgate) data can be explained in terms of field depression at the emitter tip in addition to reflection of electrons by a virtual cathode created when the anode field is insufficient to extract all of the current; in particular, the effects present within the unit cell constitute a newly described effect.

Low Young's moduli induced D-E loop dispersion and its effect on the energy discharging performance of PVDF and P(VDF-co-HFP) films

NASA Astrophysics Data System (ADS)

Xia, Weimin; Chen, Bing; Liu, Yang; Wang, Qing; Zhang, Zhicheng

2018-03-01

Large-scale stretched films of PVDF and its copolymer P(VDF-co-HFP) with various molar contents of VDF were found to possess the considerable breakdown electric fields of about 900 MV/m. Under such a high electric field, soft polymer films with lower Young's moduli are larger compressed, giving rise to a constraining of reversal of dipoles and thereby a depressing of the dielectric response. Consequently, the displacement-electric field loops at above 700 MV/m show a dispersion phenomenon, which agrees with the reduction of in phase dielectric constant from 10 to 7 in soft P(VDF-co-HFP) 85/15mol% thick film caused by ultra-high isostatic pressure of about 400Mpa. Comparatively, in mechanically stretched PVDF and 95.5/4.5mol% P(VDF-co-HFP) thick films with a relatively high hardness, the considerable discharged energy densities of 27.1 J/cm3 and 27.7 J/cm3 were obtained, providing an effective way to achieve high discharging performance for these fluoropolymers.

Rylene and related diimides for organic electronics.

PubMed

Zhan, Xiaowei; Facchetti, Antonio; Barlow, Stephen; Marks, Tobin J; Ratner, Mark A; Wasielewski, Michael R; Marder, Seth R

2011-01-11

Organic electron-transporting materials are essential for the fabrication of organic p-n junctions, photovoltaic cells, n-channel field-effect transistors, and complementary logic circuits. Rylene diimides are a robust, versatile class of polycyclic aromatic electron-transport materials with excellent thermal and oxidative stability, high electron affinities, and, in many cases, high electron mobilities; they are, therefore, promising candidates for a variety of organic electronics applications. In this review, recent developments in the area of high-electron-mobility diimides based on rylenes and related aromatic cores, particularly perylene- and naphthalene-diimide-based small molecules and polymers, for application in high-performance organic field-effect transistors and photovoltaic cells are summarized and analyzed.

Position-dependent performance of copper phthalocyanine based field-effect transistors by gold nanoparticles modification.

PubMed

Luo, Xiao; Li, Yao; Lv, Wenli; Zhao, Feiyu; Sun, Lei; Peng, Yingquan; Wen, Zhanwei; Zhong, Junkang; Zhang, Jianping

2015-01-21

A facile fabrication and characteristics of copper phthalocyanine (CuPc)-based organic field-effect transistor (OFET) using the gold nanoparticles (Au NPs) modification is reported, thereby achieving highly improved performance. The effect of Au NPs located at three different positions, that is, at the SiO2/CuPc interface (device B), embedding in the middle of CuPc layer (device C), and on the top of CuPc layer (device D), is investigated, and the results show that device D has the best performance. Compared with the device without Au NPs (reference device A), device D displays an improvement of field-effect mobility (μ(sat)) from 1.65 × 10(-3) to 5.51 × 10(-3) cm(2) V(-1) s(-1), and threshold voltage decreases from -23.24 to -16.12 V. Therefore, a strategy for the performance improvement of the CuPc-based OFET with large field-effect mobility and saturation drain current is developed, on the basis of the concept of nanoscale Au modification. The model of an additional electron transport channel formation by FET operation at the Au NPs/CuPc interface is therefore proposed to explain the observed performance improvement. Optimum CuPc thickness is confirmed to be about 50 nm in the present study. The device-to-device uniformity and time stability are discussed for future application.

Achievement of High-Response Organic Field-Effect Transistor NO₂ Sensor by Using the Synergistic Effect of ZnO/PMMA Hybrid Dielectric and CuPc/Pentacene Heterojunction.

PubMed

Han, Shijiao; Cheng, Jiang; Fan, Huidong; Yu, Junsheng; Li, Lu

2016-10-21

High-response organic field-effect transistor (OFET)-based NO₂ sensors were fabricated using the synergistic effect the synergistic effect of zinc oxide/poly(methyl methacrylate) (ZnO/PMMA) hybrid dielectric and CuPc/Pentacene heterojunction. Compared with the OFET sensors without synergistic effect, the fabricated OFET sensors showed a remarkable shift of saturation current, field-effect mobility and threshold voltage when exposed to various concentrations of NO₂ analyte. Moreover, after being stored in atmosphere for 30 days, the variation of saturation current increased more than 10 folds at 0.5 ppm NO₂. By analyzing the electrical characteristics, and the morphologies of organic semiconductor films of the OFET-based sensors, the performance enhancement was ascribed to the synergistic effect of the dielectric and organic semiconductor. The ZnO nanoparticles on PMMA dielectric surface decreased the grain size of pentacene formed on hybrid dielectric, facilitating the diffusion of CuPc molecules into the grain boundary of pentacene and the approach towards the conducting channel of OFET. Hence, NO₂ molecules could interact with CuPc and ZnO nanoparticles at the interface of dielectric and organic semiconductor. Our results provided a promising strategy for the design of high performance OFET-based NO₂ sensors in future electronic nose and environment monitoring.

Achievement of High-Response Organic Field-Effect Transistor NO2 Sensor by Using the Synergistic Effect of ZnO/PMMA Hybrid Dielectric and CuPc/Pentacene Heterojunction

PubMed Central

Han, Shijiao; Cheng, Jiang; Fan, Huidong; Yu, Junsheng; Li, Lu

2016-01-01

High-response organic field-effect transistor (OFET)-based NO2 sensors were fabricated using the synergistic effect the synergistic effect of zinc oxide/poly(methyl methacrylate) (ZnO/PMMA) hybrid dielectric and CuPc/Pentacene heterojunction. Compared with the OFET sensors without synergistic effect, the fabricated OFET sensors showed a remarkable shift of saturation current, field-effect mobility and threshold voltage when exposed to various concentrations of NO2 analyte. Moreover, after being stored in atmosphere for 30 days, the variation of saturation current increased more than 10 folds at 0.5 ppm NO2. By analyzing the electrical characteristics, and the morphologies of organic semiconductor films of the OFET-based sensors, the performance enhancement was ascribed to the synergistic effect of the dielectric and organic semiconductor. The ZnO nanoparticles on PMMA dielectric surface decreased the grain size of pentacene formed on hybrid dielectric, facilitating the diffusion of CuPc molecules into the grain boundary of pentacene and the approach towards the conducting channel of OFET. Hence, NO2 molecules could interact with CuPc and ZnO nanoparticles at the interface of dielectric and organic semiconductor. Our results provided a promising strategy for the design of high performance OFET-based NO2 sensors in future electronic nose and environment monitoring. PMID:27775653

Strong Influence of Humidity on Low-Temperature Thin-Film Fabrication via Metal Aqua Complex for High Performance Oxide Semiconductor Thin-Film Transistors.

PubMed

Lim, Keon-Hee; Huh, Jae-Eun; Lee, Jinwon; Cho, Nam-Kwang; Park, Jun-Woo; Nam, Bu-Il; Lee, Eungkyu; Kim, Youn Sang

2017-01-11

Oxide semiconductors thin film transistors (OS TFTs) with good transparency and electrical performance have great potential for future display technology. In particular, solution-processed OS TFTs have been attracted much attention due to many advantages such as continuous, large scale, and low cost processability. Recently, OS TFTs fabricated with a metal aqua complex have been focused because they have low temperature processability for deposition on flexible substrate as well as high field-effect mobility for application of advanced display. However, despite some remarkable results, important factors to optimize their electrical performance with reproducibility and uniformity have not yet been achieved. Here, we newly introduce the strong effects of humidity to enhance the electrical performance of OS TFTs fabricated with the metal aqua complex. Through humidity control during the spin-coating process and annealing process, we successfully demonstrate solution-processed InO x /SiO 2 TFTs with a good electrical uniformity of ∼5% standard deviation, showing high average field-effect mobility of 2.76 cm 2 V -1 s -1 and 15.28 cm 2 V -1 s -1 fabricated at 200 and 250 °C, respectively. Also, on the basis of the systematic analyses, we demonstrate the mechanism for the change in electrical properties of InO x TFTs depending on the humidity control. Finally, on the basis of the mechanism, we extended the humidity control to the fabrication of the AlO x insulator. Subsequently, we successfully achieved humidity-controlled InO x /AlO x TFTs fabricated at 200 °C showing high average field-effect mobility of 9.5 cm 2 V -1 s -1 .

Filter performance parameters for vectorial high-aperture wave fields.

PubMed

Sheppard, Colin J R; Martinez-Corral, M

2008-03-01

Performance parameters have been presented that can be used to compare the focusing performance of different optical systems, including the effect of pupil filters. These were originally given for the paraxial case and recently extended to the high-aperture scalar regime. We generalize these parameters to the full vectorial case for an aplanatic optical system illuminated by a plane-polarized wave. The behavior of different optical systems is compared.

The concept of a plasma centrifuge with a high frequency rotating magnetic field and axial circulation

NASA Astrophysics Data System (ADS)

Borisevich, V. D.; Potanin, E. P.

2017-07-01

The possibility of using a rotating magnetic field (RMF) in a plasma centrifuge (PC), with axial circulation to multiply the radial separation effect in an axial direction, is considered. For the first time, a traveling magnetic field (TMF) is proposed to drive an axial circulation flow in a PC. The longitudinal separation effect is calculated for a notional model, using specified operational parameters and the properties of a plasma, comprising an isotopic mixture of 20Ne-22Ne and generated by a high frequency discharge. The optimal intensity of a circulation flow, in which the longitudinal separation effect reaches its maximum value, is studied. The optimal parameters of the RMF and TMF for effective separation, as well as the centrifuge performance, are calculated.

Dual field effects in electrolyte-gated spinel ferrite: electrostatic carrier doping and redox reactions.

PubMed

Ichimura, Takashi; Fujiwara, Kohei; Tanaka, Hidekazu

2014-07-24

Controlling the electronic properties of functional oxide materials via external electric fields has attracted increasing attention as a key technology for next-generation electronics. For transition-metal oxides with metallic carrier densities, the electric-field effect with ionic liquid electrolytes has been widely used because of the enormous carrier doping capabilities. The gate-induced redox reactions revealed by recent investigations have, however, highlighted the complex nature of the electric-field effect. Here, we use the gate-induced conductance modulation of spinel ZnxFe₃₋xO₄ to demonstrate the dual contributions of volatile and non-volatile field effects arising from electronic carrier doping and redox reactions. These two contributions are found to change in opposite senses depending on the Zn content x; virtual electronic and chemical field effects are observed at appropriate Zn compositions. The tuning of field-effect characteristics via composition engineering should be extremely useful for fabricating high-performance oxide field-effect devices.

MOSFET's for Cryogenic Amplifiers

NASA Technical Reports Server (NTRS)

Dehaye, R.; Ventrice, C. A.

1987-01-01

Study seeks ways to build transistors that function effectively at liquid-helium temperatures. Report discusses physics of metaloxide/semiconductor field-effect transistors (MOSFET's) and performances of these devices at cryogenic temperatures. MOSFET's useful in highly sensitive cryogenic preamplifiers for infrared astronomy.

Design and performance of an ultra-high vacuum scanning tunneling microscope operating at dilution refrigerator temperatures and high magnetic fields.

PubMed

Misra, S; Zhou, B B; Drozdov, I K; Seo, J; Urban, L; Gyenis, A; Kingsley, S C J; Jones, H; Yazdani, A

2013-10-01

We describe the construction and performance of a scanning tunneling microscope capable of taking maps of the tunneling density of states with sub-atomic spatial resolution at dilution refrigerator temperatures and high (14 T) magnetic fields. The fully ultra-high vacuum system features visual access to a two-sample microscope stage at the end of a bottom-loading dilution refrigerator, which facilitates the transfer of in situ prepared tips and samples. The two-sample stage enables location of the best area of the sample under study and extends the experiment lifetime. The successful thermal anchoring of the microscope, described in detail, is confirmed through a base temperature reading of 20 mK, along with a measured electron temperature of 250 mK. Atomically resolved images, along with complementary vibration measurements, are presented to confirm the effectiveness of the vibration isolation scheme in this instrument. Finally, we demonstrate that the microscope is capable of the same level of performance as typical machines with more modest refrigeration by measuring spectroscopic maps at base temperature both at zero field and in an applied magnetic field.

Open-Loop HIRF Experiments Performed on a Fault Tolerant Flight Control Computer

NASA Technical Reports Server (NTRS)

Koppen, Daniel M.

1997-01-01

During the third quarter of 1996, the Closed-Loop Systems Laboratory was established at the NASA Langley Research Center (LaRC) to study the effects of High Intensity Radiated Fields on complex avionic systems and control system components. This new facility provided a link and expanded upon the existing capabilities of the High Intensity Radiated Fields Laboratory at LaRC that were constructed and certified during 1995-96. The scope of the Closed-Loop Systems Laboratory is to place highly integrated avionics instrumentation into a high intensity radiated field environment, interface the avionics to a real-time flight simulation that incorporates aircraft dynamics, engines, sensors, actuators and atmospheric turbulence, and collect, analyze, and model aircraft performance. This paper describes the layout and functionality of the Closed-Loop Systems Laboratory, and the open-loop calibration experiments that led up to the commencement of closed-loop real-time flight experiments.

Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High-k Gate Dielectric by Using High Pressure Deuterium Post Metallization Annealing

NASA Astrophysics Data System (ADS)

Park, Hokyung; Choi, Rino; Lee, Byoung Hun; Hwang, Hyunsang

2007-09-01

High pressure deuterium annealing on the hot carrier reliability characteristics of HfSiO metal oxide semiconductor field effect transistor (MOSFET) was investigated. Comparing with the conventional forming gas (H2/Ar=10%/96%, 480 °C, 30 min) annealed sample, MOSFET annealed in 5 atm pure deuterium ambient at 400 °C showed the improvement of linear drain current, reduction of interface trap density, and improvement of the hot carrier reliability characteristics. These improvements can be attributed to the effective passivation of the interface trap site after high pressure annealing and heavy mass effect of deuterium. These results indicate that high pressure pure deuterium annealing can be a promising process for improving device performance as well as hot carrier reliability, together.

High performance low voltage organic field effect transistors on plastic substrate for amplifier circuits

NASA Astrophysics Data System (ADS)

Houin, G.; Duez, F.; Garcia, L.; Cantatore, E.; Torricelli, F.; Hirsch, L.; Belot, D.; Pellet, C.; Abbas, M.

2016-09-01

The high performance air stable organic semiconductor small molecule dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) was chosen as active layer for field effect transistors built to realize flexible amplifier circuits. Initial device on rigid Si/SiO2 substrate showed appreciable performance with hysteresis-free characteristics. A number of approaches were applied to simplify the process, improve device performance and decrease the operating voltage: they include an oxide interfacial layer to decrease contact resistance; a polymer passivation layer to optimize semiconductor/dielectric interface and an anodized high-k oxide as dielectric layer for low voltage operation. The devices fabricated on plastic substrate yielded excellent electrical characteristics, showing mobility of 1.6 cm2/Vs, lack of hysteresis, operation below 5 V and on/off current ratio above 105. An OFET model based on variable ranging hopping theory was used to extract the relevant parameters from the transfer and output characteristics, which enabled us to simulate our devices achieving reasonable agreement with the measurements

Fabrication and Electrical Characterization of Correlated Oxide Field Effect Switching Devices for High Speed Electronics

DTIC Science & Technology

2015-11-19

Shriram Ramanathan HARVARD COLLEGE PRESIDENT & FELLOWS OF Final Report 11/19/2015 DISTRIBUTION A: Distribution approved for public release. AF Office... Harvard University 29 Oxford St, Pierce Hall, Cambridge, MA 02138 8. PERFORMING ORGANIZATION REPORT NUMBER 9. SPONSORING/MONITORING AGENCY NAME(S...characterization of correlated oxide field effect switching devices for  high speed electronics  PI: Shriram Ramanathan,  Harvard  University  AFOSR Grant FA9550‐12‐1

Modified van Vaals-Bergman coaxial cable coil (lambda coil) for high-field imaging.

PubMed

Matsuzawa, H; Nakada, T

1996-03-01

An easily constructed, low-capacitive coupling volume coil based on the van Vaals-Bergman coaxial cable coil for high field imaging is described. The coil (designated "lambda coil") was constructed using two 5/4 length 50 omega coaxial cables matched to a 50 omega transmission line with LC bridge balun. The standing wave on the single 5/4 lambda length coaxial cable provides two points of current maxima in oppositional direction. Therefore, the four current elements necessary for effective B1 field generation can be obtained by two 5/4 lambda length coaxial cables arranged analogous to 1/2 lambda T-antenna. Capacitive coupling between the coil elements and conductive samples (i.e. animals) is minimized by simply retaining the shield of the coaxial cable for the area of voltage maxima. The lambda coil exhibited excellent performance as a volume coil with a high quality factor and highly homogeneous rf fields. Because of its dramatically simple architecture and excellent performance, the lambda coil configuration appears to be an economical alternative to the original van Vaals-Bergman design, especially for research facilities with a high field magnet and limited bore space.

Effect of magnetic field inhomogeneity on ion cyclotron motion coherence at high magnetic field.

PubMed

Vladimirov, Gleb; Kostyukevich, Yury; Hendrickson, Christopher L; Blakney, Greg T; Nikolaev, Eugene

2015-01-01

A three-dimensional code based on the particle-in-cell algorithm modified to account for the inhomogeneity of the magnetic field was applied to determine the effect of Z(1), Z(2), Z(3), Z(4), X, Y, ZX, ZY, XZ(2) YZ(2), XY and X(2)-Y(2) components of an orthogonal magnetic field expansion on ion motion during detection in an FT-ICR cell. Simulations were performed for magnetic field strengths of 4.7, 7, 14.5 and 21 Tesla, including experimentally determined magnetic field spatial distributions for existing 4.7 T and 14.5 T magnets. The effect of magnetic field inhomogeneity on ion cloud stabilization ("ion condensation") at high numbers of ions was investigated by direct simulations of individual ion trajectories. Z(1), Z(2), Z(3) and Z(4) components have the largest effect (especially Z(1)) on ion cloud stability. Higher magnetic field strength and lower m/z demand higher relative magnetic field homogeneity to maintain cloud coherence for a fixed time period. The dependence of mass resolving power upper limit on Z(1) inhomogeneity is evaluated for different magnetic fields and m/z. The results serve to set the homogeneity requirements for various orthogonal magnetic field components (shims) for future FT-ICR magnet design.

The effects of varied versus constant high-, medium-, and low-preference stimuli on performance.

PubMed

Wine, Byron; Wilder, David A

2009-01-01

The purpose of the current study was to compare the delivery of varied versus constant high-, medium-, and low-preference stimuli on performance of 2 adults on a computer-based task in an analogue employment setting. For both participants, constant delivery of the high-preference stimulus produced the greatest increases in performance over baseline; the varied presentation produced performance comparable to constant delivery of medium-preference stimuli. Results are discussed in terms of their implications for the selection and delivery of stimuli as part of employee performance-improvement programs in the field of organizational behavior management.

Single-shot spiral imaging at 7 T.

PubMed

Engel, Maria; Kasper, Lars; Barmet, Christoph; Schmid, Thomas; Vionnet, Laetitia; Wilm, Bertram; Pruessmann, Klaas P

2018-03-25

The purpose of this work is to explore the feasibility and performance of single-shot spiral MRI at 7 T, using an expanded signal model for reconstruction. Gradient-echo brain imaging is performed on a 7 T system using high-resolution single-shot spiral readouts and half-shot spirals that perform dual-image acquisition after a single excitation. Image reconstruction is based on an expanded signal model including the encoding effects of coil sensitivity, static off-resonance, and magnetic field dynamics. The latter are recorded concurrently with image acquisition, using NMR field probes. The resulting image resolution is assessed by point spread function analysis. Single-shot spiral imaging is achieved at a nominal resolution of 0.8 mm, using spiral-out readouts of 53-ms duration. High depiction fidelity is achieved without conspicuous blurring or distortion. Effective resolutions are assessed as 0.8, 0.94, and 0.98 mm in CSF, gray matter and white matter, respectively. High image quality is also achieved with half-shot acquisition yielding image pairs at 1.5-mm resolution. Use of an expanded signal model enables single-shot spiral imaging at 7 T with unprecedented image quality. Single-shot and half-shot spiral readouts deploy the sensitivity benefit of high field for rapid high-resolution imaging, particularly for functional MRI and arterial spin labeling. © 2018 International Society for Magnetic Resonance in Medicine.

High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers.

PubMed

Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Yi, Mingdong; Wang, Laiyuan; Wu, Dequn; Xie, Linghai; Huang, Wei

2017-08-01

Nonvolatile organic field-effect transistor (OFET) memory devices based on pentacene/ N , N '-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n-type P13 embedded in p-type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well-like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge-trapping property of the poly(4-vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high-performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory.

Automated System Tests High-Power MOSFET's

NASA Technical Reports Server (NTRS)

Huston, Steven W.; Wendt, Isabel O.

1994-01-01

Computer-controlled system tests metal-oxide/semiconductor field-effect transistors (MOSFET's) at high voltages and currents. Measures seven parameters characterizing performance of MOSFET, with view toward obtaining early indication MOSFET defective. Use of test system prior to installation of power MOSFET in high-power circuit saves time and money.

[Effects of psychological stress on performances in open-field test of rats and tyrosine's modulation].

PubMed

Chen, Wei-Qiang; Cheng, Yi-Yong; Li, Shu-Tian; Hong, Yan; Wang, Dong-Lan; Hou, Yue

2009-02-01

To explore the effects of different doses of tyrosine modulation on behavioral performances in open field test of psychological stress rats. The animal model of psychological stress was developed by restraint stress for 21 days. Wistar rats were randomly assigned to five groups (n = 10) as follows: control group (CT), stress control group (SCT), low, medium and high-doses of tyrosine modulation stress groups (SLT, SMT and SIT). The changes of behavioral performances were examined by open-field test. Serum levels of cortisol, norepinephrine and dopamine were also detected. The levels of serum cortisol were all increased obviously in the four stress groups, and their bodyweight gainings were diminished. The behavioral performances of SCT rats in open-field test were changed significantly in contrast to that of CT rats. However, The behavioral performances of SMT and SHT rats were not different from that of CT rats. In addition, the serum levels of norepinephrine and dopamine were downregulated obviously in SCT and SLT groups, and no differences were observed in other groups. Psychological stress can impair body behavioral performances, and moderate tyrosine modulation may improve these abnormal changes. The related mechanisms may be involved with the changes of norepinephrine and dopamine.

The Athena X-ray Integral Field Unit (X-IFU)

NASA Technical Reports Server (NTRS)

Barret, Didier; Trong, Thein Lam; Den Herder, Jan-Willem; Piro, Luigi; Barcons, Xavier; Huovelin, Juhani; Kelley, Richard; Mas-Hesse, J. Miquel; Mitsuda, Kazuhisa; Paltani, Stephane;

Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Xiang-Wei, E-mail: xwjiang@semi.ac.cn; Li, Shu-Shen; Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026

2014-05-12

Performance limits of tunnel field-effect transistors based on mono-layer transition metal dichalcogenides are investigated through numerical quantum mechanical simulations. The atomic mono-layer nature of the devices results in a much smaller natural length λ, leading to much larger electric field inside the tunneling diodes. As a result, the inter-band tunneling currents are found to be very high as long as ultra-thin high-k gate dielectric is possible. The highest on-state driving current is found to be close to 600 μA/μm at V{sub g} = V{sub d} = 0.5 V when 2 nm thin HfO{sub 2} layer is used for gate dielectric, outperforming most of the conventional semiconductor tunnelmore » transistors. In the five simulated transition-metal dichalcogenides, mono-layer WSe{sub 2} based tunnel field-effect transistor shows the best potential. Deep analysis reveals that there is plenty room to further enhance the device performance by either geometry, alloy, or strain engineering on these mono-layer materials.« less

Computational study of graphene-based vertical field effect transistor

NASA Astrophysics Data System (ADS)

Chen, Wenchao; Rinzler, Andrew; Guo, Jing

2013-03-01

Poisson and drift-diffusion equations are solved in a three-dimensional device structure to simulate graphene-based vertical field effect transistors (GVFETs). Operation mechanisms of the GVFET with and without punched holes in the graphene source contact are presented and compared. The graphene-channel Schottky barrier can be modulated by gate electric field due to graphene's low density of states. For the graphene contact with punched holes, the contact barrier thinning and lowering around punched hole edge allow orders of magnitude higher tunneling current compared to the region away from the punched hole edge, which is responsible for significant performance improvement as already verified by experiments. Small hole size is preferred due to less electrostatic screening from channel inversion layer, which gives large electric field around the punched hole edge, thus, leading to a thinner and lower barrier. Bilayer and trilayer graphenes as the source contact degrade the performance improvement because stronger electrostatic screening leads to smaller contact barrier lowering and thinning. High punched hole area percentage improves current performance by allowing more gate electric field to modulate the graphene-channel barrier. Low effective mass channel material gives better on-off current ratio.

Theoretical investigation of performance of armchair graphene nanoribbon field effect transistors

NASA Astrophysics Data System (ADS)

Hur, Ji-Hyun; Kim, Deok-Kee

2018-05-01

In this paper, we theoretically investigate the highest possible expected performance for graphene nanoribbon field effect transistors (GNRFETs) for a wide range of operation voltages and device structure parameters, such as the width of the graphene nanoribbon and gate length. We formulated a self-consistent, non-equilibrium Green’s function method in conjunction with the Poisson equation and modeled the operation of nanometer sized GNRFETs, of which GNR channels have finite bandgaps so that the GNRFET can operate as a switch. We propose a metric for competing with the current silicon CMOS high performance or low power devices and explain that this can vary greatly depending on the GNRFET structure parameters.

Theoretical investigation of performance of armchair graphene nanoribbon field effect transistors.

PubMed

Hur, Ji-Hyun; Kim, Deok-Kee

2018-05-04

In this paper, we theoretically investigate the highest possible expected performance for graphene nanoribbon field effect transistors (GNRFETs) for a wide range of operation voltages and device structure parameters, such as the width of the graphene nanoribbon and gate length. We formulated a self-consistent, non-equilibrium Green's function method in conjunction with the Poisson equation and modeled the operation of nanometer sized GNRFETs, of which GNR channels have finite bandgaps so that the GNRFET can operate as a switch. We propose a metric for competing with the current silicon CMOS high performance or low power devices and explain that this can vary greatly depending on the GNRFET structure parameters.

Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment

NASA Astrophysics Data System (ADS)

Wang, Xiao; Zhang, Tian-Bao; Yang, Wen; Zhu, Hao; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

2017-01-01

The effective and high-quality integration of high-k dielectrics on two-dimensional (2D) crystals is essential to the device structure engineering and performance improvement of field-effect transistor (FET) based on the 2D semiconductors. We report a 2D MoS2 transistor with ultra-thin Al2O3 top-gate dielectric (6.1 nm) and extremely low leakage current. Remote forming gas plasma pretreatment was carried out prior to the atomic layer deposition, providing nucleation sites with the physically adsorbed ions on the MoS2 surface. The top gate MoS2 FET exhibited excellent electrical performance, including high on/off current ratio over 109, subthreshold swing of 85 mV/decade and field-effect mobility of 45.03 cm2/V s. Top gate leakage current less than 0.08 pA/μm2 at 4 MV/cm has been obtained, which is the smallest compared with the reported top-gated MoS2 transistors. Such an optimized integration of high-k dielectric in 2D semiconductor FET with enhanced performance is very attractive, and it paves the way towards the realization of more advanced 2D nanoelectronic devices and integrated circuits.

High-performance, low-operating voltage, and solution-processable organic field-effect transistor with silk fibroin as the gate dielectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Leilei; Xu, Xinjun, E-mail: xuxj@mater.ustb.edu.cn, E-mail: lidong@mater.ustb.edu.cn; Ma, Mingchao

2014-01-13

We report the use of silk fibroin as the gate dielectric material in solution-processed organic field-effect transistors (OFETs) with poly(3-hexylthiophene) (P3HT) as the semiconducting layer. Such OFETs exhibit a low threshold of −0.77 V and a low-operating voltage (0 to −3 V) compatible with the voltage level commonly-used in current electronic industry. The carrier mobility of such OFETs is as high as 0.21 cm{sup 2} V{sup −1} s{sup −1} in the saturation regime, comparable to the best value of P3HT-based OFETs with dielectric layer that is not solution-processed. The high-performance of this kind of OFET is related with the high contentmore » of β strands in fibroin dielectric which leads to an array of fibers in a highly ordered structure, thus reducing the trapping sites at the semiconductor/dielectric interface.« less

Large and reversible inverse magnetocaloric effect in Ni48.1Co2.9Mn35.0In14.0 metamagnetic shape memory microwire

NASA Astrophysics Data System (ADS)

Qu, Y. H.; Cong, D. Y.; Chen, Z.; Gui, W. Y.; Sun, X. M.; Li, S. H.; Ma, L.; Wang, Y. D.

2017-11-01

High-performance magnetocaloric materials should have a large reversible magnetocaloric effect and good heat exchange capability. Here, we developed a Ni48.1Co2.9Mn35.0In14.0 metamagnetic shape memory microwire with a large and reversible inverse magnetocaloric effect. As compared to the bulk counterpart, the microwire shows a better combination of magnetostructural transformation parameters (magnetization difference across transformation ΔM, transformation entropy change ΔStr, thermal hysteresis ΔThys, and transformation interval ΔTint) and thus greatly reduced critical field required for complete and reversible magnetic-field-induced transformation. A strong and reversible metamagnetic transition occurred in the microwire, which facilitates the achievement of large reversible magnetoresponsive effects. Consequently, a large and reversible magnetic-field-induced entropy change ΔSm of 12.8 J kg-1 K-1 under 5 T was achieved in the microwire, which is the highest value reported heretofore in Ni-Mn-based magnetic shape memory wires. Furthermore, since microwires have a high surface/volume ratio, they exhibit very good heat exchange capability. The present Ni48.1Co2.9Mn35.0In14.0 microwire shows great potential for magnetic refrigeration. This study may stimulate further development of high-performance magnetocaloric wires for high-efficiency and environmentally friendly solid-state cooling.

Fabricating metal-oxide-semiconductor field-effect transistors on a polyethylene terephthalate substrate by applying low-temperature layer transfer of a single-crystalline silicon layer by meniscus force

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sakaike, Kohei; Akazawa, Muneki; Nakamura, Shogo

2013-12-02

A low-temperature local-layer technique for transferring a single-crystalline silicon (c-Si) film by using a meniscus force was proposed, and an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was fabricated on polyethylene terephthalate (PET) substrate. It was demonstrated that it is possible to transfer and form c-Si films in the required shape at the required position on PET substrates at extremely low temperatures by utilizing a meniscus force. The proposed technique for layer transfer was applied for fabricating high-performance c-Si MOSFETs on a PET substrate. The fabricated MOSFET showed a high on/off ratio of more than 10{sup 8} and a high field-effect mobilitymore » of 609 cm{sup 2} V{sup −1} s{sup −1}.« less

Effects of Learning Style and Training Method on Computer Attitude and Performance in World Wide Web Page Design Training.

ERIC Educational Resources Information Center

Chou, Huey-Wen; Wang, Yu-Fang

1999-01-01

Compares the effects of two training methods on computer attitude and performance in a World Wide Web page design program in a field experiment with high school students in Taiwan. Discusses individual differences, Kolb's Experiential Learning Theory and Learning Style Inventory, Computer Attitude Scale, and results of statistical analyses.…

Effects of Collaborative Preteaching on Science Performance of High School Students with Specific Learning Disabilities

ERIC Educational Resources Information Center

Thornton, Amanda; McKissick, Bethany R.; Spooner, Fred; Lo, Ya-yu; Anderson, Adrienne L.

2015-01-01

Investigating the effectiveness of inclusive practices in science instruction and determining how to best support high school students with specific learning disabilities (SLD) in the general education classroom is a topic of increasing research attention in the field. In this study, the researchers conducted a single-subject multiple probe across…

Benchmark Modeling of the Near-Field and Far-Field Wave Effects of Wave Energy Arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rhinefrank, Kenneth E; Haller, Merrick C; Ozkan-Haller, H Tuba

2013-01-26

This project is an industry-led partnership between Columbia Power Technologies and Oregon State University that will perform benchmark laboratory experiments and numerical modeling of the near-field and far-field impacts of wave scattering from an array of wave energy devices. These benchmark experimental observations will help to fill a gaping hole in our present knowledge of the near-field effects of multiple, floating wave energy converters and are a critical requirement for estimating the potential far-field environmental effects of wave energy arrays. The experiments will be performed at the Hinsdale Wave Research Laboratory (Oregon State University) and will utilize an array ofmore » newly developed Buoys' that are realistic, lab-scale floating power converters. The array of Buoys will be subjected to realistic, directional wave forcing (1:33 scale) that will approximate the expected conditions (waves and water depths) to be found off the Central Oregon Coast. Experimental observations will include comprehensive in-situ wave and current measurements as well as a suite of novel optical measurements. These new optical capabilities will include imaging of the 3D wave scattering using a binocular stereo camera system, as well as 3D device motion tracking using a newly acquired LED system. These observing systems will capture the 3D motion history of individual Buoys as well as resolve the 3D scattered wave field; thus resolving the constructive and destructive wave interference patterns produced by the array at high resolution. These data combined with the device motion tracking will provide necessary information for array design in order to balance array performance with the mitigation of far-field impacts. As a benchmark data set, these data will be an important resource for testing of models for wave/buoy interactions, buoy performance, and far-field effects on wave and current patterns due to the presence of arrays. Under the proposed project we will initiate high-resolution (fine scale, very near-field) fluid/structure interaction simulations of buoy motions, as well as array-scale, phase-resolving wave scattering simulations. These modeling efforts will utilize state-of-the-art research quality models, which have not yet been brought to bear on this complex problem of large array wave/structure interaction problem.« less

High effectiveness of tailored flower strips in reducing pests and crop plant damage.

PubMed

Tschumi, Matthias; Albrecht, Matthias; Entling, Martin H; Jacot, Katja

2015-09-07

Providing key resources to animals may enhance both their biodiversity and the ecosystem services they provide. We examined the performance of annual flower strips targeted at the promotion of natural pest control in winter wheat. Flower strips were experimentally sown along 10 winter wheat fields across a gradient of landscape complexity (i.e. proportion non-crop area within 750 m around focal fields) and compared with 15 fields with wheat control strips. We found strong reductions in cereal leaf beetle(CLB) density (larvae: 40%; adults of the second generation: 53%) and plant damage caused by CLB (61%) in fields with flower strips compared with control fields. Natural enemies of CLB were strongly increased in flower strips and in part also in adjacent wheat fields. Flower strip effects on natural enemies, pests and crop damage were largely independent of landscape complexity(8-75% non-crop area). Our study demonstrates a high effectiveness of annual flower strips in promoting pest control, reducing CLB pest levels below the economic threshold. Hence, the studied flower strip offers a viable alternative to insecticides. This highlights the high potential of tailored agri-environment schemes to contribute to ecological intensification and may encourage more farmers to adopt such schemes.

ADX: a high field, high power density, Advanced Divertor test eXperiment

NASA Astrophysics Data System (ADS)

Vieira, R.; Labombard, B.; Marmar, E.; Irby, J.; Shiraiwa, S.; Terry, J.; Wallace, G.; Whyte, D. G.; Wolfe, S.; Wukitch, S.; ADX Team

2014-10-01

The MIT PSFC and collaborators are proposing an advanced divertor experiment (ADX) - a tokamak specifically designed to address critical gaps in the world fusion research program on the pathway to FNSF/DEMO. This high field (6.5 tesla, 1.5 MA), high power density (P/S ~ 1.5 MW/m2) facility would utilize Alcator magnet technology to test innovative divertor concepts for next-step DT fusion devices (FNSF, DEMO) at reactor-level boundary plasma pressures and parallel heat flux densities while producing high performance core plasma conditions. The experimental platform would also test advanced lower hybrid current drive (LHCD) and ion-cyclotron range of frequency (ICRF) actuators and wave physics at the plasma densities and magnetic field strengths of a DEMO, with the unique ability to deploy launcher structures both on the low-magnetic-field side and the high-field side - a location where energetic plasma-material interactions can be controlled and wave physics is most favorable for efficient current drive, heating and flow drive. This innovative experiment would perform plasma science and technology R&D necessary to inform the conceptual development and accelerate the readiness-for-deployment of FNSF/DEMO - in a timely manner, on a cost-effective research platform. Supported by DE-FC02-99ER54512.

Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Beer, Chris; Whall, Terry; Parker, Evan; Leadley, David; De Jaeger, Brice; Nicholas, Gareth; Zimmerman, Paul; Meuris, Marc; Szostak, Slawomir; Gluszko, Grzegorz; Lukasiak, Lidia

2007-12-01

Effective mobility measurements have been made at 4.2K on high performance high-k gated germanium p-type metal-oxide-semiconductor field effect transistors with a range of Ge/gate dielectric interface state densities. The mobility is successfully modelled by assuming surface roughness and interface charge scattering at the SiO2 interlayer/Ge interface. The deduced interface charge density is approximately equal to the values obtained from the threshold voltage and subthreshold slope measurements on each device. A hydrogen anneal reduces both the interface state density and the surface root mean square roughness by 20%.

Optimization of L-shaped tunneling field-effect transistor for ambipolar current suppression and Analog/RF performance enhancement

NASA Astrophysics Data System (ADS)

Li, Cong; Zhao, Xiaolong; Zhuang, Yiqi; Yan, Zhirui; Guo, Jiaming; Han, Ru

2018-03-01

L-shaped tunneling field-effect transistor (LTFET) has larger tunnel area than planar TFET, which leads to enhanced on-current ION . However, LTFET suffers from severe ambipolar behavior, which needs to be further optimized for low power and high-frequency applications. In this paper, both hetero-gate-dielectric (HGD) and lightly doped drain (LDD) structures are introduced into LTFET for suppression of ambipolarity and improvement of analog/RF performance of LTFET. Current-voltage characteristics, the variation of energy band diagrams, distribution of band-to-band tunneling (BTBT) generation and distribution of electric field are analyzed for our proposed HGD-LDD-LTFET. In addition, the effect of LDD on the ambipolar behavior of LTFET is investigated, the length and doping concentration of LDD is also optimized for better suppression of ambipolar current. Finally, analog/RF performance of HGD-LDD-LTFET are studied in terms of gate-source capacitance, gate-drain capacitance, cut-off frequency, and gain bandwidth production. TCAD simulation results show that HGD-LDD-LTFET not only drastically suppresses ambipolar current but also improves analog/RF performance compared with conventional LTFET.

Direct Measurement of the Magnetocaloric Effect in La(Fe,Si,Co) 13 Compounds in Pulsed Magnetic Fields

DOE PAGES

Zavareh, M. Ghorbani; Skourski, Y.; Skokov, K. P.; ...

2017-07-28

We report on magnetization, magnetostriction, and magnetocaloric-effect measurements of polycrystal-line LaFe 11.74Co 0.13Si 1.13 and LaFe 11.21Co 0.65Si 1.11 performed in both pulsed and static magnetic fields. Although the two compounds behave rather differently at low fields (~ 5 T), they show quite similar values of the magnetocaloric effect, namely a temperature increases of about 20 K at high fields (50-60 T). The magnetostriction and magnetization also reach very similar values here. We are able to quantify the magnetoelastic coupling and, based on that, apply the Bean-Rodbell criterion distinguishing first- and second-order transitions.

Direct Measurement of the Magnetocaloric Effect in La(Fe,Si,Co) 13 Compounds in Pulsed Magnetic Fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zavareh, M. Ghorbani; Skourski, Y.; Skokov, K. P.

We report on magnetization, magnetostriction, and magnetocaloric-effect measurements of polycrystal-line LaFe 11.74Co 0.13Si 1.13 and LaFe 11.21Co 0.65Si 1.11 performed in both pulsed and static magnetic fields. Although the two compounds behave rather differently at low fields (~ 5 T), they show quite similar values of the magnetocaloric effect, namely a temperature increases of about 20 K at high fields (50-60 T). The magnetostriction and magnetization also reach very similar values here. We are able to quantify the magnetoelastic coupling and, based on that, apply the Bean-Rodbell criterion distinguishing first- and second-order transitions.

On Study of Application of Micro-reactor in Chemistry and Chemical Field

NASA Astrophysics Data System (ADS)

Zhang, Yunshen

2018-02-01

Serving as a micro-scale chemical reaction system, micro-reactor is characterized by high heat transfer efficiency and mass transfer, strictly controlled reaction time and good safety performance; compared with the traditional mixing reactor, it can effectively shorten reaction time by virtue of these advantages and greatly enhance the chemical reaction conversion rate. However, problems still exist in the process where micro-reactor is used for production in chemistry and chemical field, and relevant researchers are required to optimize and perfect the performance of micro-reactor. This paper analyzes specific application of micro-reactor in chemistry and chemical field.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ragan, Eric D.; Bowman, Doug A.; Kopper, Regis

Virtual reality training systems are commonly used in a variety of domains, and it is important to understand how the realism of a training simulation influences training effectiveness. The paper presents a framework for evaluating the effects of virtual reality fidelity based on an analysis of a simulation’s display, interaction, and scenario components. Following this framework, we conducted a controlled experiment to test the effects of fidelity on training effectiveness for a visual scanning task. The experiment varied the levels of field of view and visual realism during a training phase and then evaluated scanning performance with the simulator’s highestmore » level of fidelity. To assess scanning performance, we measured target detection and adherence to a prescribed strategy. The results show that both field of view and visual realism significantly affected target detection during training; higher field of view led to better performance and higher visual realism worsened performance. Additionally, the level of visual realism during training significantly affected learning of the prescribed visual scanning strategy, providing evidence that high visual realism was important for learning the technique. The results also demonstrate that task performance during training was not always a sufficient measure of mastery of an instructed technique. That is, if learning a prescribed strategy or skill is the goal of a training exercise, performance in a simulation may not be an appropriate indicator of effectiveness outside of training—evaluation in a more realistic setting may be necessary.« less

Adiabatic Quantum Computing via the Rydberg Blockade

NASA Astrophysics Data System (ADS)

Keating, Tyler; Goyal, Krittika; Deutsch, Ivan

2012-06-01

We study an architecture for implementing adiabatic quantum computation with trapped neutral atoms. Ground state atoms are dressed by laser fields in a manner conditional on the Rydberg blockade mechanism, thereby providing the requisite entangling interactions. As a benchmark we study the performance of a Quadratic Unconstrained Binary Optimization (QUBO) problem whose solution is found in the ground state spin configuration of an Ising-like model. We model a realistic architecture, including the effects of magnetic level structure, with qubits encoded into the clock states of ^133Cs, effective B-fields implemented through microwaves and light shifts, and atom-atom coupling achieved by excitation to a high-lying Rydberg level. Including the fundamental effects of photon scattering we find a high fidelity for the two-qubit implementation.

A high-performance channel engineered charge-plasma-based MOSFET with high-κ spacer

NASA Astrophysics Data System (ADS)

Shan, Chan; Wang, Ying; Luo, Xin; Bao, Meng-tian; Yu, Cheng-hao; Cao, Fei

2017-12-01

In this paper, the performance of graded channel double-gate MOSFET (GC-DGFET) that utilizes the charge-plasma concept and a high-κ spacer is investigated through 2-D device simulations. The results demonstrate that GC-DGFET with high-κ spacer can effectively improve the ON-state driving current (ION) and reduce the OFF-leakage current (IOFF). We find that reduction of the initial energy barrier between the source and channel is the origin of this ION enhancement. The reason for the IOFF reduction is identified to be the extension of the effective channel length owing to the fringing field via high-κ spacers. Consequently, these devices offer enhanced performance by reducing the total gate-to-gate capacitance (Cgg) and decreasing the intrinsic delay (τ).

The respective effect of under-rib convection and pressure drop of flow fields on the performance of PEM fuel cells.

PubMed

Wang, Chao; Zhang, Qinglei; Shen, Shuiyun; Yan, Xiaohui; Zhu, Fengjuan; Cheng, Xiaojing; Zhang, Junliang

2017-03-02

The flow field configuration plays an important role on the performance of proton exchange membrane fuel cells (PEMFCs). For instance, channel/rib width and total channel cross-sectional area determine the under-rib convection and pressure drop respectively, both of which directly influence the water removal, in turn affecting the oxygen supply and cathodic oxygen reduction reaction. In this study, effects of under-rib convection and pressure drop on cell performance are investigated experimentally and numerically by adjusting the channel/rib width and channel cross-sectional area of flow fields. The results show that the performance differences with various flow field configurations mainly derive from the oxygen transport resistance which is determined by the water accumulation degree, and the cell performance would benefit from the narrower channels and smaller cross sections. It reveals that at low current densities when water starts to accumulate in GDL at under-rib regions, the under-rib convection plays a more important role in water removal than pressure drop does; in contrast, at high current densities when water starts to accumulate in channels, the pressure drop dominates the water removal to facilitate the oxygen transport to the catalyst layer.

The respective effect of under-rib convection and pressure drop of flow fields on the performance of PEM fuel cells

NASA Astrophysics Data System (ADS)

Wang, Chao; Zhang, Qinglei; Shen, Shuiyun; Yan, Xiaohui; Zhu, Fengjuan; Cheng, Xiaojing; Zhang, Junliang

2017-03-01

The flow field configuration plays an important role on the performance of proton exchange membrane fuel cells (PEMFCs). For instance, channel/rib width and total channel cross-sectional area determine the under-rib convection and pressure drop respectively, both of which directly influence the water removal, in turn affecting the oxygen supply and cathodic oxygen reduction reaction. In this study, effects of under-rib convection and pressure drop on cell performance are investigated experimentally and numerically by adjusting the channel/rib width and channel cross-sectional area of flow fields. The results show that the performance differences with various flow field configurations mainly derive from the oxygen transport resistance which is determined by the water accumulation degree, and the cell performance would benefit from the narrower channels and smaller cross sections. It reveals that at low current densities when water starts to accumulate in GDL at under-rib regions, the under-rib convection plays a more important role in water removal than pressure drop does; in contrast, at high current densities when water starts to accumulate in channels, the pressure drop dominates the water removal to facilitate the oxygen transport to the catalyst layer.

Effects of Computer Skill on Mouse Move and Click Performance

ERIC Educational Resources Information Center

Panagiotakopoulos, Chris; Sarris, Menelaos

2008-01-01

This study focuses on the use of computers in the field of education. It reports a series of experimental mouse move and click tasks on constant and moving stimuli. These experiments attempt to explore the efficiency with which individuals of different skill level and age group perform using a mouse. Differences in performance between high-skill…

Routing optimization in networks based on traffic gravitational field model

NASA Astrophysics Data System (ADS)

Liu, Longgeng; Luo, Guangchun

2017-04-01

For research on the gravitational field routing mechanism on complex networks, we further analyze the gravitational effect of paths. In this study, we introduce the concept of path confidence degree to evaluate the unblocked reliability of paths that it takes the traffic state of all nodes on the path into account from the overall. On the basis of this, we propose an improved gravitational field routing protocol considering all the nodes’ gravities on the path and the path confidence degree. In order to evaluate the transmission performance of the routing strategy, an order parameter is introduced to measure the network throughput by the critical value of phase transition from a free-flow phase to a jammed phase, and the betweenness centrality is used to evaluate the transmission performance and traffic congestion of the network. Simulation results show that compared with the shortest-path routing strategy and the previous gravitational field routing strategy, the proposed algorithm improves the network throughput considerably and effectively balances the traffic load within the network, and all nodes in the network are utilized high efficiently. As long as γ ≥ α, the transmission performance can reach the maximum and remains unchanged for different α and γ, which ensures that the proposed routing protocol is high efficient and stable.

Progressing in cable-in-conduit for fusion magnets: from ITER to low cost, high performance DEMO

NASA Astrophysics Data System (ADS)

Uglietti, D.; Sedlak, K.; Wesche, R.; Bruzzone, P.; Muzzi, L.; della Corte, A.

2018-05-01

The performance of ITER toroidal field (TF) conductors still have a significant margin for improvement because the effective strain between ‑0.62% and ‑0.95% limits the strands’ critical current between 15% and 45% of the maximum achievable. Prototype Nb3Sn cable-in-conduit conductors have been designed, manufactured and tested in the frame of the EUROfusion DEMO activities. In these conductors the effective strain has shown a clear improvement with respect to the ITER conductors, reaching values between ‑0.55% and ‑0.28%, resulting in a strand critical current which is two to three times higher than in ITER conductors. In terms of the amount of Nb3Sn strand required for the construction of the DEMO TF magnet system, such improvement may lead to a reduction of at least a factor of two with respect to a similar magnet built with ITER type conductors; a further saving of Nb3Sn is possible if graded conductors/windings are employed. In the best case the DEMO TF magnet could require fewer Nb3Sn strands than the ITER one, despite the larger size of DEMO. Moreover high performance conductors could be operated at higher fields than ITER TF conductors, enabling the construction of low cost, compact, high field tokamaks.

The effects of tDCS upon sustained visual attention are dependent on cognitive load.

PubMed

Roe, James M; Nesheim, Mathias; Mathiesen, Nina C; Moberget, Torgeir; Alnæs, Dag; Sneve, Markus H

2016-01-08

Transcranial Direct Current Stimulation (tDCS) modulates the excitability of neuronal responses and consequently can affect performance on a variety of cognitive tasks. However, the interaction between cognitive load and the effects of tDCS is currently not well-understood. We recorded the performance accuracy of participants on a bilateral multiple object tracking task while undergoing bilateral stimulation assumed to enhance (anodal) and decrease (cathodal) neuronal excitability. Stimulation was applied to the posterior parietal cortex (PPC), a region inferred to be at the centre of an attentional tracking network that shows load-dependent activation. 34 participants underwent three separate stimulation conditions across three days. Each subject received (1) left cathodal / right anodal PPC tDCS, (2) left anodal / right cathodal PPC tDCS, and (3) sham tDCS. The number of targets-to-be-tracked was also manipulated, giving a low (one target per visual field), medium (two targets per visual field) or high (three targets per visual field) tracking load condition. It was found that tracking performance at high attentional loads was significantly reduced in both stimulation conditions relative to sham, and this was apparent in both visual fields, regardless of the direction of polarity upon the brain's hemispheres. We interpret this as an interaction between cognitive load and tDCS, and suggest that tDCS may degrade attentional performance when cognitive networks become overtaxed and unable to compensate as a result. Systematically varying cognitive load may therefore be a fruitful direction to elucidate the effects of tDCS upon cognitive functions. Copyright © 2015 The Authors. Published by Elsevier Ltd.. All rights reserved.

Sensitivity of storage field performance to geologic and cavern design parameters in salt domes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ehgartner, Brian L.; Park, Byoung Yoon

2009-03-01

A sensitivity study was performed utilizing a three dimensional finite element model to assess allowable cavern field sizes for strategic petroleum reserve salt domes. A potential exists for tensile fracturing and dilatancy damage to salt that can compromise the integrity of a cavern field in situations where high extraction ratios exist. The effects of salt creep rate, depth of salt dome top, dome size, caprock thickness, elastic moduli of caprock and surrounding rock, lateral stress ratio of surrounding rock, cavern size, depth of cavern, and number of caverns are examined numerically. As a result, a correlation table between the parametersmore » and the impact on the performance of storage field was established. In general, slower salt creep rates, deeper depth of salt dome top, larger elastic moduli of caprock and surrounding rock, and a smaller radius of cavern are better for structural performance of the salt dome.« less

Effects of Anode Flow Field Design on CO2 Bubble Behavior in μDMFC

PubMed Central

Li, Miaomiao; Liang, Junsheng; Liu, Chong; Sun, Gongquan; Zhao, Gang

2009-01-01

Clogging of anode flow channels by CO2 bubbles is a vital problem for further performance improvements of the micro direct methanol fuel cell (μDMFC). In this paper, a new type anode structure using the concept of the non-equipotent serpentine flow field (NESFF) to solve this problem was designed, fabricated and tested. Experiments comparing the μDMFC with and without this type of anode flow field were implemented using a home-made test loop. Results show that the mean-value, amplitude and frequency of the inlet-to-outlet pressure drops in the NESFF is far lower than that in the traditional flow fields at high μDMFC output current. Furthermore, the sequential images of the CO2 bubbles as well as the μDMFC performance with different anode flow field pattern were also investigated, and the conclusions are in accordance with those derived from the pressure drop experiments. Results of this study indicate that the non-equipotent design of the μDMFC anode flow field can effectively mitigate the CO2 clogging in the flow channels, and hence lead to a significant promotion of the μDMFC performance. PMID:22412313

Exploring the Charge Transport in Conjugated Polymers.

PubMed

Xu, Yong; Sun, Huabin; Li, Wenwu; Lin, Yen-Fu; Balestra, Francis; Ghibaudo, Gerard; Noh, Yong-Young

2017-11-01

Conjugated polymers came to an unprecedented epoch that the charge transport is limited only by small disorder within aggregated domains. Accurate evaluation of transport performance is thus vital to optimizing further molecule design. Yet, the routine method by means of the conventional field-effect transistors may not satisfy such a requirement. Here, it is shown that the extrinsic effects of Schottky barrier, access transport through semiconductor bulk, and concurrent ambipolar conduction seriously influence transport analysis. The planar transistors incorporating ohmic contacts free of access and ambipolar conduction afford an ideal access to charge transport. It is found, however, that only the planar transistors operating in low-field regime are reliable to explore the inherent transport properties due to the energetic disorder lowering by the lateral field induced by high drain voltage. This work opens up a robust approach to comprehend the delicate charge transport in conjugated polymers so as to develop high-performance semiconducting polymers for promising plastic electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication of High-Performance Polymer Bulk-Heterojunction Solar Cells by the Interfacial Modifications III

DTIC Science & Technology

2011-04-30

University of Tennessee) 3. "An ambipolar to n-type transformation in pentacene -based organic field-effect transistors" Org. Electron. 12, 509 (2011...OFETs). An ambipolar to n-type transformation in pentacene -based organic field-effect transistors (OFETs) of Al source-drain electrodes had been...correlated with the interfacial interactions between Al electrodes and pentacene , as characterized by analyzing Near-edge X-ray absorption fine structure

Analysis of epitaxial drift field N on P silicon solar cells

NASA Technical Reports Server (NTRS)

Baraona, C. R.; Brandhorst, H. W., Jr.

1976-01-01

The performance of epitaxial drift field silicon solar cell structures having a variety of impurity profiles was calculated. These structures consist of a uniformly doped P-type substrate layer, and a P-type epitaxial drift field layer with a variety of field strengths. Several N-layer structures were modeled. A four layer solar cell model was used to calculate efficiency, open circuit voltage and short circuit current. The effect on performance of layer thickness, doping level, and diffusion length was determined. The results show that peak initial efficiency of 18.1% occurs for a drift field thickness of about 30 micron with the doping rising from 10 to the 17th power atoms/cu cm at the edge of the depletion region to 10 to the 18th power atoms/cu cm in the substrate. Stronger drift fields (narrow field regions) allowed very high performance (17% efficiency) even after irradiation to 3x10 to the 14th power 1 MeV electrons/sq cm.

Ultralow-power complementary metal-oxide-semiconductor inverters constructed on Schottky barrier modified nanowire metal-oxide-semiconductor field-effect-transistors.

PubMed

Ma, R M; Peng, R M; Wen, X N; Dai, L; Liu, C; Sun, T; Xu, W J; Qin, G G

2010-10-01

We show that the threshold voltages of both n- and p-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) can be lowered to close to zero by adding extra Schottky contacts on top of nanowires (NWs). Novel complementary metal-oxide-semiconductor (CMOS) inverters are constructed on these Schottky barrier modified n- and p-channel NW MOSFETs. Based on the high performances of the modified n- and p-channel MOSFETs, especially the low threshold voltages, the as-fabricated CMOS inverters have low operating voltage, high voltage gain, and ultra-low static power dissipation.

One-Dimensional Nanostructure Field-Effect Sensors for Gas Detection

PubMed Central

Zhao, Xiaoli; Cai, Bin; Tang, Qingxin; Tong, Yanhong; Liu, Yichun

2014-01-01

Recently; one-dimensional (1D) nanostructure field-effect transistors (FETs) have attracted much attention because of their potential application in gas sensing. Micro/nanoscaled field-effect sensors combine the advantages of 1D nanostructures and the characteristic of field modulation. 1D nanostructures provide a large surface area-volume ratio; which is an outstanding advantage for gas sensors with high sensitivity and fast response. In addition; the nature of the single crystals is favorable for the studies of the response mechanism. On the other hand; one main merit of the field-effect sensors is to provide an extra gate electrode to realize the current modulation; so that the sensitivity can be dramatically enhanced by changing the conductivity when operating the sensors in the subthreshold regime. This article reviews the recent developments in the field of 1D nanostructure FET for gas detection. The sensor configuration; the performance as well as their sensing mechanism are evaluated. PMID:25090418

Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer

NASA Astrophysics Data System (ADS)

Bolshakov, Pavel; Zhao, Peng; Azcatl, Angelica; Hurley, Paul K.; Wallace, Robert M.; Young, Chadwin D.

2017-07-01

A high quality Al2O3 layer is developed to achieve high performance in top-gate MoS2 transistors. Compared with top-gate MoS2 field effect transistors on a SiO2 layer, the intrinsic mobility and subthreshold slope were greatly improved in high-k backside layer devices. A forming gas anneal is found to enhance device performance due to a reduction in the charge trap density of the backside dielectric. The major improvements in device performance are ascribed to the forming gas anneal and the high-k dielectric screening effect of the backside Al2O3 layer. Top-gate devices built upon these stacks exhibit a near-ideal subthreshold slope of ˜69 mV/dec and a high Y-Function extracted intrinsic carrier mobility (μo) of 145 cm2/V.s, indicating a positive influence on top-gate device performance even without any backside bias.

Wheelchair Mobility Performance enhancement by Changing Wheelchair Properties; What is the Effect of Grip, Seat Height and Mass?

PubMed

van der Slikke, Rienk M A; de Witte, Annemarie M H; Berger, Monique A M; Bregman, Daan J J; Veeger, Dirk Jan H E J

2018-02-12

The purpose of this study was to provide insight in the effect of wheelchair settings on wheelchair mobility performance. Twenty elite wheelchair basketball athletes of low (n=10) and high classification (n=10), were tested in a wheelchair basketball directed field test. Athletes performed the test in their own wheelchair, which was modified for five additional conditions regarding seat height (high - low), mass (central - distributed) and grip. The previously developed, inertial sensor based wheelchair mobility performance monitor 1 was used to extract wheelchair kinematics in all conditions. Adding mass showed most effect on wheelchair mobility performance, with a reduced average acceleration across all activities. Once distributed, additional mass also reduced maximal rotational speed and rotational acceleration. Elevating seat height had effect on several performance aspects in sprinting and turning, whereas lowering seat height influenced performance minimally. Increased rim grip did not alter performance. No differences in response were evident between low and high classified athletes. The wheelchair mobility performance monitor showed sensitive to detect performance differences due to the small changes in wheelchair configuration made. Distributed additional mass had the most effect on wheelchair mobility performance, whereas additional grip had the least effect of conditions tested. Performance effects appear similar for both low and high classified athletes. Athletes, coaches and wheelchair experts are provided with insight in the performance effect of key wheelchair settings, and they are offered a proven sensitive method to apply in sports practice, in their search for the best wheelchair-athlete combination.

Factors affecting the separation performance of proteins in capillary electrophoresis.

PubMed

Zhu, Yueping; Li, Zhenqing; Wang, Ping; Shen, Lisong; Zhang, Dawei; Yamaguchi, Yoshinori

2018-04-15

Capillary electrophoresis (CE) is an effective tool for protein separation and analysis. Compared with capillary gel electrophoresis (CGE), non-gel sieving capillary electrophoresis (NGSCE) processes the superiority on operation, repeatability and automaticity. Herein, we investigated the effect of polymer molecular weight and concentration, electric field strength, and the effective length of the capillary on the separation performance of proteins, and find that (1) polymer with high molecular weight and concentration favors the separation of proteins, although concentrated polymer hinders its injection into the channel of the capillary due to its high viscosity. (2) The resolution between the adjacent proteins decreases with the increase of electric field strength. (3) When the effective length of the capillary is long, the separation performance improves at the cost of separation time. (4) 1.4% (w/v) hydroxyethyl cellulose (HEC), 100 V/cm voltage and 12 cm effective length offers the best separation for the proteins with molecular weight from 14,400 Da to 97,400 Da. Finally, we employed the optimal electrophoretic conditions to resolve Lysozyme, Ovalbumin, BSA and their mixtures, and found that they were baseline resolved within 15 min. Copyright © 2018 Elsevier B.V. All rights reserved.

The dark and bright sides of self-efficacy in predicting learning, innovative and risky performances.

PubMed

Salanova, Marisa; Lorente, Laura; Martínez, Isabel M

2012-11-01

The objective of this study is to analyze the different role that efficacy beliefs play in the prediction of learning, innovative and risky performances. We hypothesize that high levels of efficacy beliefs in learning and innovative performances have positive consequences (i.e., better academic and innovative performance, respectively), whereas in risky performances they have negative consequences (i.e., less safety performance). To achieve this objective, three studies were conducted, 1) a two-wave longitudinal field study among 527 undergraduate students (learning setting), 2) a three-wave longitudinal lab study among 165 participants performing innovative group tasks (innovative setting), and 3) a field study among 228 construction workers (risky setting). As expected, high levels of efficacy beliefs have positive or negative consequences on performance depending on the specific settings. Unexpectedly, however, we found no time x self-efficacy interaction effect over time in learning and innovative settings. Theoretical and practical implications within the social cognitive theory of A. Bandura framework are discussed.

The Future of Classification in Wheelchair Sports; Can Data Science and Technological Advancement Offer an Alternative Point of View?

PubMed

van der Slikke, Rienk M A; Bregman, Daan J J; Berger, Monique A M; de Witte, Annemarie M H; Veeger, Dirk-Jan H E J

2017-11-01

Classification is a defining factor for competition in wheelchair sports, but it is a delicate and time-consuming process with often questionable validity. 1 New inertial sensor based measurement methods applied in match play and field tests, allow for more precise and objective estimates of the impairment effect on wheelchair mobility performance. It was evaluated if these measures could offer an alternative point of view for classification. Six standard wheelchair mobility performance outcomes of different classification groups were measured in match play (n=29), as well as best possible performance in a field test (n=47). In match-results a clear relationship between classification and performance level is shown, with increased performance outcomes in each adjacent higher classification group. Three outcomes differed significantly between the low and mid-class groups, and one between the mid and high-class groups. In best performance (field test), a split between the low and mid-class groups shows (5 out of 6 outcomes differed significantly) but hardly any difference between the mid and high-class groups. This observed split was confirmed by cluster analysis, revealing the existence of only two performance based clusters. The use of inertial sensor technology to get objective measures of wheelchair mobility performance, combined with a standardized field-test, brought alternative views for evidence based classification. The results of this approach provided arguments for a reduced number of classes in wheelchair basketball. Future use of inertial sensors in match play and in field testing could enhance evaluation of classification guidelines as well as individual athlete performance.

Nonlinear effective permittivity of field grading composite dielectrics

NASA Astrophysics Data System (ADS)

Yang, Xiao; Zhao, Xiaolei; Li, Qi; Hu, Jun; He, Jinliang

2018-02-01

Field grading composite dielectrics with good nonlinear electrical properties can function as smart materials for electrical field control in a high-voltage apparatus. Besides the well-documented nonlinear conducting behavior, the field-dependent effective permittivity of field grading composites were also reported; however, in-depth research on the mechanism and influencing factors of this nonlinear permittivity are absent. This paper theoretically discusses the origin of the nonlinear effective permittivity, and the mechanism is illustrated through the waveform analysis of the nonlinear response of ZnO microvaristor/silicone rubber composites under a pure AC field. The field-dependent effective permittivity and loss property of the ZnO composites are measured by a dielectric spectrometer in both DC and AC fields under different frequencies. Through comparison of measurement results and theoretical models, the influence of the filler concentration, frequency, and time domain characteristics of the applied field on the nonlinear permittivity of the field grading composites are well explained. This paper provides insight into the nonlinear permittivity of field grading composites, and will be helpful for further tuning the performance of field grading composites.

Nanometer scale composition study of MBE grown BGaN performed by atom probe tomography

NASA Astrophysics Data System (ADS)

Bonef, Bastien; Cramer, Richard; Speck, James S.

2017-06-01

Laser assisted atom probe tomography is used to characterize the alloy distribution in BGaN. The effect of the evaporation conditions applied on the atom probe specimens on the mass spectrum and the quantification of the III site atoms is first evaluated. The evolution of the Ga++/Ga+ charge state ratio is used to monitor the strength of the applied field. Experiments revealed that applying high electric fields on the specimen results in the loss of gallium atoms, leading to the over-estimation of boron concentration. Moreover, spatial analysis of the surface field revealed a significant loss of atoms at the center of the specimen where high fields are applied. A good agreement between X-ray diffraction and atom probe tomography concentration measurements is obtained when low fields are applied on the tip. A random distribution of boron in the BGaN layer grown by molecular beam epitaxy is obtained by performing accurate and site specific statistical distribution analysis.

Effect of prior performance on subsequent performance evaluation by field independent-dependent raters.

PubMed

Sisco, Howard; Leventhal, Gloria

2007-12-01

The importance of accurate performance appraisals is central to many aspects of personnel activities in organizations. This study examined threats due to past performance to accuracy of evaluation of subsequent performance by raters differing in scores on field dependence. 162 college students were classified as Field-dependent (n = 81) or Field-independent (n = 81), using a median split on the Group Embedded Figures Test. Past performance (a lecture) was good or poor, presented directly via a videotape or indirectly via a written evaluation to the Field-independent or Field-dependent groups. Analysis indicated the hypothesized contrast effect (ratings in the opposite direction from that of prior ratings) in the Direct condition and an unexpected, albeit smaller, contrast effect in the Indirect condition. There were also differential effects of performance, presentation, and field dependency on rating of lecturer's style and ability.

Arctic Boreal Vulnerability Experiment (ABoVE) Science Cloud

NASA Astrophysics Data System (ADS)

Duffy, D.; Schnase, J. L.; McInerney, M.; Webster, W. P.; Sinno, S.; Thompson, J. H.; Griffith, P. C.; Hoy, E.; Carroll, M.

2014-12-01

The effects of climate change are being revealed at alarming rates in the Arctic and Boreal regions of the planet. NASA's Terrestrial Ecology Program has launched a major field campaign to study these effects over the next 5 to 8 years. The Arctic Boreal Vulnerability Experiment (ABoVE) will challenge scientists to take measurements in the field, study remote observations, and even run models to better understand the impacts of a rapidly changing climate for areas of Alaska and western Canada. The NASA Center for Climate Simulation (NCCS) at the Goddard Space Flight Center (GSFC) has partnered with the Terrestrial Ecology Program to create a science cloud designed for this field campaign - the ABoVE Science Cloud. The cloud combines traditional high performance computing with emerging technologies to create an environment specifically designed for large-scale climate analytics. The ABoVE Science Cloud utilizes (1) virtualized high-speed InfiniBand networks, (2) a combination of high-performance file systems and object storage, and (3) virtual system environments tailored for data intensive, science applications. At the center of the architecture is a large object storage environment, much like a traditional high-performance file system, that supports data proximal processing using technologies like MapReduce on a Hadoop Distributed File System (HDFS). Surrounding the storage is a cloud of high performance compute resources with many processing cores and large memory coupled to the storage through an InfiniBand network. Virtual systems can be tailored to a specific scientist and provisioned on the compute resources with extremely high-speed network connectivity to the storage and to other virtual systems. In this talk, we will present the architectural components of the science cloud and examples of how it is being used to meet the needs of the ABoVE campaign. In our experience, the science cloud approach significantly lowers the barriers and risks to organizations that require high performance computing solutions and provides the NCCS with the agility required to meet our customers' rapidly increasing and evolving requirements.

Enhancing Photoresponsivity of Self-Aligned MoS2 Field-Effect Transistors by Piezo-Phototronic Effect from GaN Nanowires.

PubMed

Liu, Xingqiang; Yang, Xiaonian; Gao, Guoyun; Yang, Zhenyu; Liu, Haitao; Li, Qiang; Lou, Zheng; Shen, Guozhen; Liao, Lei; Pan, Caofeng; Lin Wang, Zhong

2016-08-23

We report high-performance self-aligned MoS2 field-effect transistors (FETs) with enhanced photoresponsivity by the piezo-phototronic effect. The FETs are fabricated based on monolayer MoS2 with a piezoelectric GaN nanowire (NW) as the local gate, and a self-aligned process is employed to define the source/drain electrodes. The fabrication method allows the preservation of the intrinsic property of MoS2 and suppresses the scattering center density in the MoS2/GaN interface, which results in high electrical and photoelectric performances. MoS2 FETs with channel lengths of ∼200 nm have been fabricated with a small subthreshold slope of 64 mV/dec. The photoresponsivity is 443.3 A·W(-1), with a fast response and recovery time of ∼5 ms under 550 nm light illumination. When strain is introduced into the GaN NW, the photoresponsivity is further enhanced to 734.5 A·W(-1) and maintains consistent response and recovery time, which is comparable with that of the mechanical exfoliation of MoS2 transistors. The approach presented here opens an avenue to high-performance top-gated piezo-enhanced MoS2 photodetectors.

Design of the DIRECT-project: interventions to increase job resources and recovery opportunities to improve job-related health, well-being, and performance outcomes in nursing homes.

PubMed

Spoor, Ellen; de Jonge, Jan; Hamers, Jan P H

2010-05-28

Because of high demands at work, nurses are at high risk for occupational burnout and physical complaints. The presence of job resources (such as job autonomy or social support) and recovery opportunities could counteract the adverse effect of high job demands. However, it is still unclear how job resources and recovery opportunities can be translated into effective workplace interventions aiming to improve employee health, well-being, and performance-related outcomes. The aim of the current research project is developing and implementing interventions to optimize job resources and recovery opportunities, which may lead to improved health, well-being and performance of nurses. The DIRECT-project (DIsc Risk Evaluating Controlled Trial) is a longitudinal, quasi-experimental field study. Nursing home staff of 4 intervention wards and 4 comparison wards will be involved. Based on the results of a base-line survey, interventions will be implemented to optimize job resources and recovery opportunities. After 12 and 24 month the effect of the interventions will be investigated with follow-up surveys. Additionally, a process evaluation will be conducted to map factors that either stimulated or hindered successful implementation as well as the effectiveness of the interventions. The DIRECT-project fulfils a strong need for intervention research in the field of work, stress, performance, and health. The results could reveal (1) how interventions can be tailored to optimize job resources and recovery opportunities, in order to counteract job demands, and (2) what the effects of these interventions will be on health, well-being, and performance of nursing staff.

Improvement in trapped fields by stacking bulk superconductors

NASA Astrophysics Data System (ADS)

Suzuki, A.; Wongsatanawarid, A.; Seki, H.; Murakami, M.

2009-10-01

We studied the effects of stacking several bulk superconductor blocks on the field trapping properties. In order to avoid the detrimental effects of the bottom deteriorated parts, bulk Dy-Ba-Cu-O superconductors 45 mm in diameter and 10 mm in thickness were cut from the top parts of as-grown bulk blocks of 25 mm diameter. We stacked the superconductors and measured the field distribution as a function of the gap. The trapped field measurements were performed by field-cooling the samples inserted in between two permanent magnets with liquid nitrogen. It was found that the trapped field values are almost doubled when the number of stacked bulk superconductors increased from two to three. The present results clearly show that one can expect beneficial effects of increasing the ratio of the height to the diameter even in bulk high temperature superconductors.

Performance enhancement of iron-chromium redox flow batteries by employing interdigitated flow fields

NASA Astrophysics Data System (ADS)

Zeng, Y. K.; Zhou, X. L.; Zeng, L.; Yan, X. H.; Zhao, T. S.

2016-09-01

The catalyst for the negative electrode of iron-chromium redox flow batteries (ICRFBs) is commonly prepared by adding a small amount of Bi3+ ions in the electrolyte and synchronously electrodepositing metallic particles onto the electrode surface at the beginning of charge process. Achieving a uniform catalyst distribution in the porous electrode, which is closely related to the flow field design, is critically important to improve the ICRFB performance. In this work, the effects of flow field designs on catalyst electrodeposition and battery performance are investigated. It is found that compared to the serpentine flow field (SFF) design, the interdigitated flow field (IFF) forces the electrolyte through the porous electrode between the neighboring channels and enhances species transport during the processes of both the catalyst electrodeposition and iron/chromium redox reactions, thus enabling a more uniform catalyst distribution and higher mass transport limitation. It is further demonstrated that the energy efficiency of the ICRFB with the IFF reaches 80.7% at a high current density (320 mA cm-2), which is 8.2% higher than that of the ICRFB with the SFF. With such a high performance and intrinsically low-cost active materials, the ICRFB with the IFF offers a great promise for large-scale energy storage.

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

NASA Astrophysics Data System (ADS)

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

2012-06-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

Symmetry in circularly polarized molecular high-order harmonic generation with intense bicircular laser pulses

NASA Astrophysics Data System (ADS)

Yuan, Kai-Jun; Bandrauk, André D.

2018-02-01

We present symmetry effects of laser fields and molecular geometries in circularly polarized high-order harmonic generation by bichromatic counter-rotating circularly polarized laser pulses. Simulations are performed on oriented molecules by numerically solving time-dependent Schrödinger equations. We discuss how electron recollision trajectories by the orthogonal laser field polarizations influence the harmonic polarization by using a time-frequency analysis of harmonics. It is found that orientation-dependent asymmetric ionization in linear molecules due to Coulomb potentials gives rise to a dependence of the polarization on the harmonic frequency. Effects of Coriolis forces are also presented on harmonic generation. Electron recollision trajectories illustrate the effects of the relative symmetry of the field and the molecule, thus paving a method for circularly polarized attosecond pulse generation and molecular orbital imaging in more complex systems.

Motivating learning, performance, and persistence: the synergistic effects of intrinsic goal contents and autonomy-supportive contexts.

PubMed

Vansteenkiste, Maarten; Simons, Joke; Lens, Willy; Sheldon, Kennon M; Deci, Edward L

2004-08-01

Three field experiments with high school and college students tested the self-determination theory hypotheses that intrinsic (vs. extrinsic) goals and autonomy-supportive (vs. controlling) learning climates would improve students' learning, performance, and persistence. The learning of text material or physical exercises was framed in terms of intrinsic (community, personal growth, health) versus extrinsic (money, image) goals, which were presented in an autonomy-supportive versus controlling manner. Analyses of variance confirmed that both experimentally manipulated variables yielded main effects on depth of processing, test performance, and persistence (all ps <.001), and an interaction resulted in synergistically high deep processing and test performance (but not persistence) when both intrinsic goals and autonomy support were present. Effects were significantly mediated by autonomous motivation.

High magnetic field studies of the charge density wave state of the quasi-two-dimensional conductor KMO 6O 17

NASA Astrophysics Data System (ADS)

Dumas, Jean; Guyot, Hervé; Balaska, Hafid; Marcus, Jacques; Vignolles, David; Sheikin, Ilya; Audouard, Alain; Brossard, Luc; Schlenker, Claire

2004-04-01

Magnetic torque and magnetoresistance measurements have been performed in high magnetic field on the quasi-two-dimensional charge density wave (CDW) oxide bronze KMo 6O 17 . Several anomalies have been found below 28 T either on the torque or on the magnetoresistance data. They can be attributed predominantly to orbital effects. Magnetoresistance data obtained up to 55 T show that a transition takes place above 30 T. This transition may be due to the Pauli coupling. The new field-induced density wave state exhibits Shubnikov-de Haas (SdH) oscillations.

Performance analysis of InGaAs/GaAsP heterojunction double gate tunnel field effect transistor

NASA Astrophysics Data System (ADS)

Ahish, S.; Sharma, Dheeraj; Vasantha, M. H.; Kumar, Y. B. N.

2017-03-01

In this paper, analog/RF performance of InGaAs/GaAsP heterojunction double gate tunnel field effect transistor (HJTFET) has been explored. A highly doped n+ layer is placed at the Source-Channel junction in order to improve the horizontal electric field component and thus, improve the realiability of the device. The analog performance of the device is analysed by extracting current-voltage characteristics, transcondutance (gm), gate-to-drain capacitance (Cgd) and gate-to-source capacitance (Cgs). Further, RF performance of the device is evaluated by obtaining cut-off frequency (fT) and Gain Bandwidth (GBW) product. ION /IOFF ratio equal to ≈ 109, subthreshold slope of 27 mV/dec, maximum fT of 2.1 THz and maximum GBW of 484 GHz were achieved. Also, the impact of temperature variation on the linearity performance of the device has been investigated. Furthermore, the circuit level performance of the device is performed by implementing a Common Source (CS) amplifier; maximum gain of 31.11 dB and 3-dB cut-off frequency equal to 91.2 GHz were achieved for load resistance (RL) = 17.5 KΩ.

A steep-slope transistor based on abrupt electronic phase transition

NASA Astrophysics Data System (ADS)

Shukla, Nikhil; Thathachary, Arun V.; Agrawal, Ashish; Paik, Hanjong; Aziz, Ahmedullah; Schlom, Darrell G.; Gupta, Sumeet Kumar; Engel-Herbert, Roman; Datta, Suman

2015-08-01

Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials into field-effect-transistor technology can potentially augment current state-of-the-art devices by providing unique routes to overcome their conventional limits, attempts to harness the insulator-to-metal transition for high-performance transistors have experienced little success. Here, we demonstrate a pathway for harnessing the abrupt resistivity transformation across the insulator-to-metal transition in vanadium dioxide (VO2), to design a hybrid-phase-transition field-effect transistor that exhibits gate controlled steep (`sub-kT/q') and reversible switching at room temperature. The transistor design, wherein VO2 is implemented in series with the field-effect transistor's source rather than into the channel, exploits negative differential resistance induced across the VO2 to create an internal amplifier that facilitates enhanced performance over a conventional field-effect transistor. Our approach enables low-voltage complementary n-type and p-type transistor operation as demonstrated here, and is applicable to other insulator-to-metal transition materials, offering tantalizing possibilities for energy-efficient logic and memory applications.

A steep-slope transistor based on abrupt electronic phase transition.

PubMed

Shukla, Nikhil; Thathachary, Arun V; Agrawal, Ashish; Paik, Hanjong; Aziz, Ahmedullah; Schlom, Darrell G; Gupta, Sumeet Kumar; Engel-Herbert, Roman; Datta, Suman

2015-08-07

Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials into field-effect-transistor technology can potentially augment current state-of-the-art devices by providing unique routes to overcome their conventional limits, attempts to harness the insulator-to-metal transition for high-performance transistors have experienced little success. Here, we demonstrate a pathway for harnessing the abrupt resistivity transformation across the insulator-to-metal transition in vanadium dioxide (VO2), to design a hybrid-phase-transition field-effect transistor that exhibits gate controlled steep ('sub-kT/q') and reversible switching at room temperature. The transistor design, wherein VO2 is implemented in series with the field-effect transistor's source rather than into the channel, exploits negative differential resistance induced across the VO2 to create an internal amplifier that facilitates enhanced performance over a conventional field-effect transistor. Our approach enables low-voltage complementary n-type and p-type transistor operation as demonstrated here, and is applicable to other insulator-to-metal transition materials, offering tantalizing possibilities for energy-efficient logic and memory applications.

High performance top-gated ferroelectric field effect transistors based on two-dimensional ZnO nanosheets

NASA Astrophysics Data System (ADS)

Tian, Hongzheng; Wang, Xudong; Zhu, Yuankun; Liao, Lei; Wang, Xianying; Wang, Jianlu; Hu, Weida

2017-01-01

High quality ultrathin two-dimensional zinc oxide (ZnO) nanosheets (NSs) are synthesized, and the ZnO NS ferroelectric field effect transistors (FeFETs) are demonstrated based on the P(VDF-TrFE) polymer film used as the top gate insulating layer. The ZnO NSs exhibit a maximum field effect mobility of 588.9 cm2/Vs and a large transconductance of 2.5 μS due to their high crystalline quality and ultrathin two-dimensional structure. The polarization property of the P(VDF-TrFE) film is studied, and a remnant polarization of >100 μC/cm2 is achieved with a P(VDF-TrFE) thickness of 300 nm. Because of the ultrahigh remnant polarization field generated in the P(VDF-TrFE) film, the FeFETs show a large memory window of 16.9 V and a high source-drain on/off current ratio of more than 107 at zero gate voltage and a source-drain bias of 0.1 V. Furthermore, a retention time of >3000 s of the polarization state is obtained, inspiring a promising candidate for applications in data storage with non-volatile features.

Near-Infrared to Visible Organic Upconversion Devices Based on Organic Light-Emitting Field Effect Transistors.

PubMed

Li, Dongwei; Hu, Yongsheng; Zhang, Nan; Lv, Ying; Lin, Jie; Guo, Xiaoyang; Fan, Yi; Luo, Jinsong; Liu, Xingyuan

2017-10-18

The near-infrared (NIR) to visible upconversion devices have attracted great attention because of their potential applications in the fields of night vision, medical imaging, and military security. Herein, a novel all-organic upconversion device architecture has been first proposed and developed by incorporating a NIR absorption layer between the carrier transport layer and the emission layer in heterostructured organic light-emitting field effect transistors (OLEFETs). The as-prepared devices show a typical photon-to-photon upconversion efficiency as high as 7% (maximum of 28.7% under low incident NIR power intensity) and millisecond-scale response time, which are the highest upconversion efficiency and one of the fastest response time among organic upconversion devices as referred to the previous reports up to now. The high upconversion performance mainly originates from the gain mechanism of field-effect transistor structures and the unique advantage of OLEFETs to balance between the photodetection and light emission. Meanwhile, the strategy of OLEFETs also offers the advantage of high integration so that no extra OLED is needed in the organic upconversion devices. The results would pave way for low-cost, flexible and portable organic upconversion devices with high efficiency and simplified processing.

In-channel electrochemical detection in the middle of microchannel under high electric field.

PubMed

Kang, Chung Mu; Joo, Segyeong; Bae, Je Hyun; Kim, Yang-Rae; Kim, Yongseong; Chung, Taek Dong

2012-01-17

We propose a new method for performing in-channel electrochemical detection under a high electric field using a polyelectrolytic gel salt bridge (PGSB) integrated in the middle of the electrophoretic separation channel. The finely tuned placement of a gold working electrode and the PGSB on an equipotential surface in the microchannel provided highly sensitive electrochemical detection without any deterioration in the separation efficiency or interference of the applied electric field. To assess the working principle, the open circuit potentials between gold working electrodes and the reference electrode at varying distances were measured in the microchannel under electrophoretic fields using an electrically isolated potentiostat. In addition, "in-channel" cyclic voltammetry confirmed the feasibility of electrochemical detection under various strengths of electric fields (∼400 V/cm). Effective separation on a microchip equipped with a PGSB under high electric fields was demonstrated for the electrochemical detection of biological compounds such as dopamine and catechol. The proposed "in-channel" electrochemical detection under a high electric field enables wider electrochemical detection applications in microchip electrophoresis.

Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance.

PubMed

Khalil, Hafiz M W; Khan, Muhammad Farooq; Eom, Jonghwa; Noh, Hwayong

2015-10-28

The development of low resistance contacts to 2D transition-metal dichalcogenides (TMDs) is still a big challenge for the future generation field effect transistors (FETs) and optoelectronic devices. Here, we report a chemical doping technique to achieve low contact resistance by keeping the intrinsic properties of few layers WS2. The transfer length method has been used to investigate the effect of chemical doping on contact resistance. After doping, the contact resistance (Rc) of multilayer (ML) WS2 has been reduced to 0.9 kΩ·μm. The significant reduction of the Rc is mainly due to the high electron doping density, thus a reduction in Schottky barrier height, which limits the device performance. The threshold voltage of ML-WS2 FETs confirms a negative shift upon the chemical doping, as further confirmed from the positions of E(1)2g and A1g peaks in Raman spectra. The n-doped samples possess a high drain current of 65 μA/μm, with an on/off ratio of 1.05 × 10(6) and a field effect mobility of 34.7 cm(2)/(V·s) at room temperature. Furthermore, the photoelectric properties of doped WS2 flakes were also measured under deep ultraviolet light. The potential of using LiF doping in contact engineering of TMDs opens new ways to improve the device performance.

High effectiveness of tailored flower strips in reducing pests and crop plant damage

PubMed Central

Tschumi, Matthias; Albrecht, Matthias; Entling, Martin H.; Jacot, Katja

2015-01-01

Providing key resources to animals may enhance both their biodiversity and the ecosystem services they provide. We examined the performance of annual flower strips targeted at the promotion of natural pest control in winter wheat. Flower strips were experimentally sown along 10 winter wheat fields across a gradient of landscape complexity (i.e. proportion non-crop area within 750 m around focal fields) and compared with 15 fields with wheat control strips. We found strong reductions in cereal leaf beetle (CLB) density (larvae: 40%; adults of the second generation: 53%) and plant damage caused by CLB (61%) in fields with flower strips compared with control fields. Natural enemies of CLB were strongly increased in flower strips and in part also in adjacent wheat fields. Flower strip effects on natural enemies, pests and crop damage were largely independent of landscape complexity (8–75% non-crop area). Our study demonstrates a high effectiveness of annual flower strips in promoting pest control, reducing CLB pest levels below the economic threshold. Hence, the studied flower strip offers a viable alternative to insecticides. This highlights the high potential of tailored agri-environment schemes to contribute to ecological intensification and may encourage more farmers to adopt such schemes. PMID:26311668

Unconventional High-Performance Laser Protection System Based on Dichroic Dye-Doped Cholesteric Liquid Crystals

NASA Astrophysics Data System (ADS)

Zhang, Wanshu; Zhang, Lanying; Liang, Xiao; Le Zhou; Xiao, Jiumei; Yu, Li; Li, Fasheng; Cao, Hui; Li, Kexuan; Yang, Zhou; Yang, Huai

2017-02-01

High-performance and cost-effective laser protection system is of crucial importance for the rapid advance of lasers in military and civilian fields leading to severe damages of human eyes and sensitive optical devices. However, it is crucially hindered by the angle-dependent protective effect and the complex preparation process. Here we demonstrate that angle-independence, good processibility, wavelength tunability, high optical density and good visibility can be effectuated simultaneously, by embedding dichroic anthraquinone dyes in a cholesteric liquid crystal matrix. More significantly, unconventional two-dimensional parabolic protection behavior is reported for the first time that in stark contrast to the existing protection systems, the overall parabolic protection behavior enables protective effect to increase with incident angles, hence providing omnibearing high-performance protection. The protective effect is controllable by dye concentration, LC cell thickness and CLC reflection efficiency, and the system can be made flexible enabling applications in flexible and even wearable protection devices. This research creates a promising avenue for the high-performance and cost-effective laser protection, and may foster the development of optical applications such as solar concentrators, car explosion-proof membrane, smart windows and polarizers.

Nano-oxide-layer specular spin valve heads with synthetic pinned layer: Head performance and reliability

NASA Astrophysics Data System (ADS)

Hasegawa, N.; Koike, F.; Ikarashi, K.; Ishizone, M.; Kawamura, M.; Nakazawa, Y.; Takahashi, A.; Tomita, H.; Iwasaki, H.; Sahashi, M.

2002-05-01

To implement the specular nano-oxide-layer (NOL) spin valve (SV) heads for use in practical applications, it is key to simultaneously achieve a good specular effect of the NOL inserted in the synthetic ferrimagnet pinned layer (i.e., high magnetoresistance MR performance) and a strong pinning field through the NOL. By using CoFe+X as a substance to be subjected to oxidation, we obtained the NOL specular SV films simultaneously achieving a high MR ratio of 17%-18% and a high pinning field of 1100-1500 Oe. Narrow track (0.12 μm) heads were fabricated and they showed a high sensitivity of 10 mV/μm. Several reliability tests were done both at the sheet film level and the actual head level. The oxygen inside NOL was found to be stable up to 350 °C, and pinned layer magnetization canting after orthogonal field annealing was found to be almost the same as today's non-NOL SV films. An electrostatic discharge test and accelerated lifetime test were also performed and NOL specular heads were demonstrated to have almost the same robustness as today's non-NOL heads.

Wafer-scalable high-performance CVD graphene devices and analog circuits

NASA Astrophysics Data System (ADS)

Tao, Li; Lee, Jongho; Li, Huifeng; Piner, Richard; Ruoff, Rodney; Akinwande, Deji

2013-03-01

Graphene field effect transistors (GFETs) will serve as an essential component for functional modules like amplifier and frequency doublers in analog circuits. The performance of these modules is directly related to the mobility of charge carriers in GFETs, which per this study has been greatly improved. Low-field electrostatic measurements show field mobility values up to 12k cm2/Vs at ambient conditions with our newly developed scalable CVD graphene. For both hole and electron transport, fabricated GFETs offer substantial amplification for small and large signals at quasi-static frequencies limited only by external capacitances at high-frequencies. GFETs biased at the peak transconductance point featured high small-signal gain with eventual output power compression similar to conventional transistor amplifiers. GFETs operating around the Dirac voltage afforded positive conversion gain for the first time, to our knowledge, in experimental graphene frequency doublers. This work suggests a realistic prospect for high performance linear and non-linear analog circuits based on the unique electron-hole symmetry and fast transport now accessible in wafer-scalable CVD graphene. *Support from NSF CAREER award (ECCS-1150034) and the W. M. Keck Foundation are appreicated.

Influence of the morphology of the copper(II) phthalocyanine thin film on the performance of organic field-effect transistors

NASA Astrophysics Data System (ADS)

Xu, Jing; Liu, Xueqiang; Wang, Hailong; Hou, Wenlong; Zhao, Lele; Zhang, Haiquan

2017-01-01

Organic thin-film transistors (OTFTs) with high crystallization copper phthalocyanine (CuPc) active layers were fabricated. The performance of CuPc OTFTs was studied without and with treatment by Solvent Vapor Annealing on CuPc film. The values of the threshold voltage without and with solvent-vapor annealing are -17 V and -10.5 V respectively. The field-effect mobility values in saturation region of CuPc thin-film transistors without and with Solvent Vapor Annealing are 0.00027 cm2/V s and 0.0025 cm2/V s respectively. Meanwhile, the high crystallization of the CuPc film with a larger grain size and less grain boundaries can be observed by investigating the morphology of the CuPc active layer through scanning electron microscopy and X-ray diffraction. The experimental results showed the decreased of the resistance of the conducting channel, that led to a performance improvement of the OTFTs.

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors.

PubMed

Giusi, G; Giordano, O; Scandurra, G; Rapisarda, M; Calvi, S; Ciofi, C

2016-04-01

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz(1/2), while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giusi, G.; Giordano, O.; Scandurra, G.

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz{sup 1/2}, while DC performances are limited only bymore » the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.« less

MCT/MOSFET Switch

NASA Technical Reports Server (NTRS)

Rippel, Wally E.

1990-01-01

Metal-oxide/semiconductor-controlled thyristor (MCT) and metal-oxide/semiconductor field-effect transistor (MOSFET) connected in switching circuit to obtain better performance. Offers high utilization of silicon, low forward voltage drop during "on" period of operating cycle, fast turnon and turnoff, and large turnoff safe operating area. Includes ability to operate at high temperatures, high static blocking voltage, and ease of drive.

A component compensation method for magnetic interferential field

NASA Astrophysics Data System (ADS)

Zhang, Qi; Wan, Chengbiao; Pan, Mengchun; Liu, Zhongyan; Sun, Xiaoyong

2017-04-01

A new component searching with scalar restriction method (CSSRM) is proposed for magnetometer to compensate magnetic interferential field caused by ferromagnetic material of platform and improve measurement performance. In CSSRM, the objection function for parameter estimation is to minimize magnetic field (components and magnitude) difference between its measurement value and reference value. Two scalar compensation method is compared with CSSRM and the simulation results indicate that CSSRM can estimate all interferential parameters and external magnetic field vector with high accuracy. The magnetic field magnitude and components, compensated with CSSRM, coincide with true value very well. Experiment is carried out for a tri-axial fluxgate magnetometer, mounted in a measurement system with inertial sensors together. After compensation, error standard deviation of both magnetic field components and magnitude are reduced from more than thousands nT to less than 20 nT. It suggests that CSSRM provides an effective way to improve performance of magnetic interferential field compensation.

Key Topics for High-Lift Research: A Joint Wind Tunnel/Flight Test Approach

NASA Technical Reports Server (NTRS)

Fisher, David; Thomas, Flint O.; Nelson, Robert C.

1996-01-01

Future high-lift systems must achieve improved aerodynamic performance with simpler designs that involve fewer elements and reduced maintenance costs. To expeditiously achieve this, reliable CFD design tools are required. The development of useful CFD-based design tools for high lift systems requires increased attention to unresolved flow physics issues. The complex flow field over any multi-element airfoil may be broken down into certain generic component flows which are termed high-lift building block flows. In this report a broad spectrum of key flow field physics issues relevant to the design of improved high lift systems are considered. It is demonstrated that in-flight experiments utilizing the NASA Dryden Flight Test Fixture (which is essentially an instrumented ventral fin) carried on an F-15B support aircraft can provide a novel and cost effective method by which both Reynolds and Mach number effects associated with specific high lift building block flows can be investigated. These in-flight high lift building block flow experiments are most effective when performed in conjunction with coordinated ground based wind tunnel experiments in low speed facilities. For illustrative purposes three specific examples of in-flight high lift building block flow experiments capable of yielding a high payoff are described. The report concludes with a description of a joint wind tunnel/flight test approach to high lift aerodynamics research.

New organic semiconductors with imide/amide-containing molecular systems.

PubMed

Liu, Zitong; Zhang, Guanxin; Cai, Zhengxu; Chen, Xin; Luo, Hewei; Li, Yonghai; Wang, Jianguo; Zhang, Deqing

2014-10-29

Due to their high electron affinities, chemical and thermal stabilities, π-conjugated molecules with imide/amide frameworks have received considerable attentions as promising candidates for high-performance optoelectronic materials, particularly for organic semiconductors with high carrier mobilities. The purpose of this Research News is to give an overview of recent advances in development of high performance imide/amide based organic semiconductors for field-effect transistors. It covers naphthalene diimide-, perylene diimide- and amide-based conjugated molecules and polymers for organic semiconductors. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Properties of the superconductor in accelerator dipole magnets

NASA Astrophysics Data System (ADS)

Teravest, Derk

Several aspects of the application of superconductors to high field dipole magnets for particle accelerators are discussed. The attention is focused on the 10 tesla (1 m model) magnet that is envisaged for the future Large Hadron Collider (LHC) accelerator. The basic motivation behind the study is the intention of employing superconductors to their utmost performance. An overview of practical supercomputers, their applications and their impact on high field dipole magnets used for particle accelerators, is presented. The LHC reference design for the dipole magnets is outlined. Several models were used to study the influence of a number of factors in the shape and in particular, the deviation from the shape that is due to the flux flow state. For the investigated extrinsic and intrinsic factors, a classification can be made with respect to the effect on the shape of the characteristic of a multifilamentary wire. The optimization of the coil structure for high field dipole magnets, with respect to the field quality is described. An analytical model for solid and hollow filaments, to calculate the effect of filament magnetization in the quality of the dipole field, is presented.

Low-frequency (1/f) noise in nanocrystal field-effect transistors.

PubMed

Lai, Yuming; Li, Haipeng; Kim, David K; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

2014-09-23

We investigate the origins and magnitude of low-frequency noise in high-mobility nanocrystal field-effect transistors and show the noise is of 1/f-type. Sub-band gap states, in particular, those introduced by nanocrystal surfaces, have a significant influence on the 1/f noise. By engineering the device geometry and passivating nanocrystal surfaces, we show that in the linear and saturation regimes the 1/f noise obeys Hooge's model of mobility fluctuations, consistent with transport of a high density of accumulated carriers in extended electronic states of the NC thin films. In the subthreshold regime, the Fermi energy moves deeper into the mobility gap and sub-band gap trap states give rise to a transition to noise dominated by carrier number fluctuations as described in McWhorter's model. CdSe nanocrystal field-effect transistors have a Hooge parameter of 3 × 10(-2), comparable to other solution-deposited, thin-film devices, promising high-performance, low-cost, low-noise integrated circuitry.

Organic-inorganic proximity effect in the magneto-conductance of vertical organic field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khachatryan, B.; Devir-Wolfman, A. H.; Ehrenfreund, E., E-mail: eitane@technion.ac.il

Vertical organic field effect transistors having a patterned source electrode and an a-SiO{sub 2} insulation layer show high performance as a switching element with high transfer characteristics. By measuring the low field magneto-conductance under ambient conditions at room temperature, we show here that the proximity of the inorganic a-SiO{sub 2} insulation to the organic conducting channel affects considerably the magnetic response. We propose that in n-type devices, electrons in the organic conducting channel and spin bearing charged defects in the inorganic a-SiO{sub 2} insulation layer (e.g., O{sub 2} = Si{sup +·}) form oppositely charged spin pairs whose singlet-triplet spin configurations are mixedmore » through the relatively strong hyperfine field of {sup 29}Si. By increasing the contact area between the insulation layer and the conducting channel, the ∼2% magneto-conductance response may be considerably enhanced.« less

The joint effects of personality and workplace social exchange relationships in predicting task performance and citizenship performance.

PubMed

Kamdar, Dishan; Van Dyne, Linn

2007-09-01

This field study examines the joint effects of social exchange relationships at work (leader-member exchange and team-member exchange) and employee personality (conscientiousness and agreeableness) in predicting task performance and citizenship performance. Consistent with trait activation theory, matched data on 230 employees, their coworkers, and their supervisors demonstrated interactions in which high quality social exchange relationships weakened the positive relationships between personality and performance. Results demonstrate the benefits of consonant predictions in which predictors and outcomes are matched on the basis of specific targets. We discuss theoretical and practical implications. (c) 2007 APA.

Flexible electronic control system based on FPGA for liquid-crystal microlens

NASA Astrophysics Data System (ADS)

Zhang, Bo; Xin, Zhaowei; Li, Dapeng; Wei, Dong; Zhang, Xinyu; Wang, Haiwei; Xie, Changsheng

2018-02-01

Traditional imaging based on common optical lens can only be used to collect intensity information of incident beams, but actually lightwave also carries other mode information about targets and environment, including: spectrum, wavefront, and depth of target, and so on. It is very important to acquire those information mentioned for efficiently detecting and identifying targets in complex background. There is a urgent need to develop new high-performance optical imaging components. The liquid-crystal microlens (LCMs) only by applying spatial electrical field to change optical performance, have demonstrated remarkable advantages comparing conventional lenses, and therefore show a widely application prospect. Because the physical properties of the spatial electric fields between electrode plates in LCMs are directly related to the light-field performances of LCMs, the quality of voltage signal applied to LCMs needs high requirements. In this paper, we design and achieve a new type of digital voltage equipment with a wide adjustable voltage range and high precise voltage to effectively drive and adjust LCMs. More importantly, the device primarily based on field-programmable gate array(FPGA) can generate flexible and stable voltage signals to cooperate with the various functions of LCMs. Our experiments show that through the electronic control system, the LCMs already realize several significant functions including: electrically swing focus, wavefront imaging, electrically tunable spectral imaging and light-field imaging.

Development of a high sensitivity pinhole type gamma camera using semiconductors for low dose rate fields

NASA Astrophysics Data System (ADS)

Ueno, Yuichiro; Takahashi, Isao; Ishitsu, Takafumi; Tadokoro, Takahiro; Okada, Koichi; Nagumo, Yasushi; Fujishima, Yasutake; Yoshida, Akira; Umegaki, Kikuo

2018-06-01

We developed a pinhole type gamma camera, using a compact detector module of a pixelated CdTe semiconductor, which has suitable sensitivity and quantitative accuracy for low dose rate fields. In order to improve the sensitivity of the pinhole type semiconductor gamma camera, we adopted three methods: a signal processing method to set the discriminating level lower, a high sensitivity pinhole collimator and a smoothing image filter that improves the efficiency of the source identification. We tested basic performances of the developed gamma camera and carefully examined effects of the three methods. From the sensitivity test, we found that the effective sensitivity was about 21 times higher than that of the gamma camera for high dose rate fields which we had previously developed. We confirmed that the gamma camera had sufficient sensitivity and high quantitative accuracy; for example, a weak hot spot (0.9 μSv/h) around a tree root could be detected within 45 min in a low dose rate field test, and errors of measured dose rates with point sources were less than 7% in a dose rate accuracy test.

The respective effect of under-rib convection and pressure drop of flow fields on the performance of PEM fuel cells

PubMed Central

Wang, Chao; Zhang, Qinglei; Shen, Shuiyun; Yan, Xiaohui; Zhu, Fengjuan; Cheng, Xiaojing; Zhang, Junliang

2017-01-01

The flow field configuration plays an important role on the performance of proton exchange membrane fuel cells (PEMFCs). For instance, channel/rib width and total channel cross-sectional area determine the under-rib convection and pressure drop respectively, both of which directly influence the water removal, in turn affecting the oxygen supply and cathodic oxygen reduction reaction. In this study, effects of under-rib convection and pressure drop on cell performance are investigated experimentally and numerically by adjusting the channel/rib width and channel cross-sectional area of flow fields. The results show that the performance differences with various flow field configurations mainly derive from the oxygen transport resistance which is determined by the water accumulation degree, and the cell performance would benefit from the narrower channels and smaller cross sections. It reveals that at low current densities when water starts to accumulate in GDL at under-rib regions, the under-rib convection plays a more important role in water removal than pressure drop does; in contrast, at high current densities when water starts to accumulate in channels, the pressure drop dominates the water removal to facilitate the oxygen transport to the catalyst layer. PMID:28251983

Evaluation of solvation free energies for small molecules with the AMOEBA polarizable force field

PubMed Central

Mohamed, Noor Asidah; Bradshaw, Richard T.

2016-01-01

The effects of electronic polarization in biomolecular interactions will differ depending on the local dielectric constant of the environment, such as in solvent, DNA, proteins, and membranes. Here the performance of the AMOEBA polarizable force field is evaluated under nonaqueous conditions by calculating the solvation free energies of small molecules in four common organic solvents. Results are compared with experimental data and equivalent simulations performed with the GAFF pairwise‐additive force field. Although AMOEBA results give mean errors close to “chemical accuracy,” GAFF performs surprisingly well, with statistically significantly more accurate results than AMOEBA in some solvents. However, for both models, free energies calculated in chloroform show worst agreement to experiment and individual solutes are consistently poor performers, suggesting non‐potential‐specific errors also contribute to inaccuracy. Scope for the improvement of both potentials remains limited by the lack of high quality experimental data across multiple solvents, particularly those of high dielectric constant. © 2016 The Authors. Journal of Computational Chemistry Published by Wiley Periodicals, Inc. PMID:27757978

Long-Term Reliability of a Hard-Switched Boost Power Processing Unit Utilizing SiC Power MOSFETs

NASA Technical Reports Server (NTRS)

Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Iannello, Christopher J.; Del Castillo, Linda Y.; Fitzpatrick, Fred D.; Mojarradi, Mohammad M.;

Performance and Costs of Ductless Heat Pumps in Marine-Climate High-Performance Homes -- Habitat for Humanity The Woods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lubliner, Michael; Howard, Luke; Hales, David

The Woods is a Habitat for Humanity (HFH) community of ENERGY STAR Homes Northwest (ESHNW)-certified homes located in the marine climate of Tacoma/Pierce County, Washington. This research report builds on an earlier preliminary draft 2014 BA report, and includes significant billing analysis and cost effectiveness research from a collaborative, ongoing Ductless Heat Pump (DHP)research effort for Tacoma Public Utilities (TPU) and Bonneville Power Administration (BPA). This report focuses on the results of field testing, modeling, and monitoring of ductless mini-split heat pump hybrid heating systems in seven homes built and first occupied at various times between September 2013 and Octobermore » 2014. The report also provides WSU documentation of high-performance home observations, lessons learned, and stakeholder recommendations for builders of affordable high-performance housing such as HFH. Tacoma Public Utilities (TPU) and Bonneville Power Administration (BPA). This report focuses on the results of field testing, modeling, and monitoring of ductless mini-split heat pump hybrid heating systems in seven homes built and first occupied at various times between September 2013 and October 2014. The report also provides WSU documentation of high-performance home observations, lessons learned, and stakeholder recommendations for builders of affordable high-performance housing such as HFH.« less

Impedance computations and beam-based measurements: A problem of discrepancy

NASA Astrophysics Data System (ADS)

Smaluk, Victor

2018-04-01

High intensity of particle beams is crucial for high-performance operation of modern electron-positron storage rings, both colliders and light sources. The beam intensity is limited by the interaction of the beam with self-induced electromagnetic fields (wake fields) proportional to the vacuum chamber impedance. For a new accelerator project, the total broadband impedance is computed by element-wise wake-field simulations using computer codes. For a machine in operation, the impedance can be measured experimentally using beam-based techniques. In this article, a comparative analysis of impedance computations and beam-based measurements is presented for 15 electron-positron storage rings. The measured data and the predictions based on the computed impedance budgets show a significant discrepancy. Three possible reasons for the discrepancy are discussed: interference of the wake fields excited by a beam in adjacent components of the vacuum chamber, effect of computation mesh size, and effect of insufficient bandwidth of the computed impedance.

Voices from the Field: How School Boards Can Support Districtwide School Improvement Efforts. Newsletter

ERIC Educational Resources Information Center

Center for Comprehensive School Reform and Improvement, 2009

2009-01-01

Leadership is crucial for effective, lasting school improvement. Although research has established that strong, competent principals are vital for high-performing schools (Hallinger, 2003; Leithwood, 1994), attention is turning increasingly to the importance of effective district leadership, including school boards and their contributions to…

Significantly improved dielectric performances of nanocomposites via loading two-dimensional core-shell structure Bi2Te3@SiO2 nanosheets

NASA Astrophysics Data System (ADS)

Chen, Jianwen; Wang, Xiucai; Yu, Xinmei; Fan, Yun; Duan, Zhikui; Jiang, Yewen; Yang, Faquan; Zhou, Yuexia

2018-07-01

Polymer/semiconductor-insulator nanocomposites can display high dielectric constants with a relatively low dissipation factor under low electric fields, and thus seem to promising for high energy density capacitors. Here, a novel nanocomposite films is developed by loading two-dimensional (2D) core-shell structure Bi2Te3@SiO2 nanosheets in the poly (vinylidene fluoride-hexafluoro propylene) (P(VDF-HFP)) polymer matrix. The 2D Bi2Te3 nanosheets were prepared through simple microwave-assisted method. The experimental results suggesting that the SiO2 shell layer between the fillers and polymer matrix could effectively improve the dielectric constant, dielectric loss, AC conductivity, and breakdown strength of composites films. The composite films load with 10 vol.% 2D Bi2Te3@SiO2 nanosheets exhibits a high dielectric constant of 70.3 at 1 kHz and relatively low dielectric loss of 0.058 at 1 kHz. The finite element simulation of electric field and electric current density distribution revealed that the SiO2 shell layer between the fillers and polymer matrix could effectively improve the energy loss, local electric field strength, and breakdown strength of composite films. Therefore, this work will provide a promising route to achieve high-performance capacitors.

Hydrothermally Processed Photosensitive Field-Effect Transistor Based on ZnO Nanorod Networks

NASA Astrophysics Data System (ADS)

Kumar, Ashish; Bhargava, Kshitij; Dixit, Tejendra; Palani, I. A.; Singh, Vipul

2016-11-01

Formation of a stable, reproducible zinc oxide (ZnO) nanorod-network-based photosensitive field-effect transistor using a hydrothermal process at low temperature has been demonstrated. K2Cr2O7 additive was used to improve adhesion and facilitate growth of the ZnO nanorod network over the SiO2/Si substrate. Transistor characteristics obtained in the dark resemble those of the n-channel-mode field-effect transistor (FET). The devices showed I on/ I off ratio above 8 × 102 under dark condition, field-effect mobility of 4.49 cm2 V-1 s-1, and threshold voltage of -12 V. Further, under ultraviolet (UV) illumination, the FET exhibited sensitivity of 2.7 × 102 in off-state (-10 V) versus 1.4 in on-state (+9.7 V) of operation. FETs based on such nanorod networks showed good photoresponse, which is attributed to the large surface area of the nanorod network. The growth temperature for ZnO nanorod networks was kept at 110°C, enabling a low-temperature, cost-effective, simple approach for high-performance ZnO-based FETs for large-scale production. The role of network interfaces in the FET performance is also discussed.

Effect of External Economic-Field Cycle and Market Temperature on Stock-Price Hysteresis: Monte Carlo Simulation on the Ising Spin Model

NASA Astrophysics Data System (ADS)

Punya Jaroenjittichai, Atchara; Laosiritaworn, Yongyut

2017-09-01

In this work, the stock-price versus economic-field hysteresis was investigated. The Ising spin Hamiltonian was utilized as the level of ‘disagreement’ in describing investors’ behaviour. The Ising spin directions were referred to an investor’s intention to perform his action on trading his stock. The periodic economic variation was also considered via the external economic-field in the Ising model. The stochastic Monte Carlo simulation was performed on Ising spins, where the steady-state excess demand and supply as well as the stock-price were extracted via the magnetization. From the results, the economic-field parameters and market temperature were found to have significant effect on the dynamic magnetization and stock-price behaviour. Specifically, the hysteresis changes from asymmetric to symmetric loops with increasing market temperature and economic-field strength. However, the hysteresis changes from symmetric to asymmetric loops with increasing the economic-field frequency, when either temperature or economic-field strength is large enough, and returns to symmetric shape at very high frequencies. This suggests competitive effects among field and temperature factors on the hysteresis characteristic, implying multi-dimensional complicated non-trivial relationship among inputs-outputs. As is seen, the results reported (over extensive range) can be used as basis/guideline for further analysis/quantifying how economic-field and market-temperature affect the stock-price distribution on the course of economic cycle.

Magnetic field configurations on thruster performance in accordance with ion beam characteristics in cylindrical Hall thruster plasmas

NASA Astrophysics Data System (ADS)

Kim, Holak; Choe, Wonho; Lim, Youbong; Lee, Seunghun; Park, Sanghoo

2017-03-01

Magnetic field configuration is critical in Hall thrusters for achieving high performance, particularly in thrust, specific impulse, efficiency, etc. Ion beam features are also significantly influenced by magnetic field configurations. In two typical magnetic field configurations (i.e., co-current and counter-current configurations) of a cylindrical Hall thruster, ion beam characteristics are compared in relation to multiply charged ions. Our study shows that the co-current configuration brings about high ion current (or low electron current), high ionization rate, and small plume angle that lead to high thruster performance.

Effects of the unintentional background concentration, indium composition and defect density on the performance of InGaN p-i-n homojunction solar cells

NASA Astrophysics Data System (ADS)

Wu, Shudong; Cheng, Liwen; Wang, Qiang

2018-07-01

We theoretically investigate the effects of the unintentional background concentration, indium composition and defect density of intrinsic layer (i-layer) on the photovoltaic performance of InGaN p-i-n homojunction solar cells by solving the Poisson and steady-state continuity equations. The built-in electric field and carrier generation rate depend on the position within the i-layer. The collection efficiency, short circuit current density, open circuit voltage, fill factor, and conversion efficiency are found to depend strongly on the background concentration, thickness, indium composition, and defect density of the i-layer. With increasing the background concentration, the maximum thickness of field-bearing i-layer decreases, and the width of depletion region may become even too small to cover the whole i-layer, resulting in a serious decrease of the carrier collection. Some oscillations as a function of indium composition are found in the short circuit current density and conversion efficiency at high indium composition and low defect density due to the interference between the absorbance and the generation rate of carriers. The defect density degrades seriously the overall photovoltaic performance, and its effect on the photovoltaic performance is roughly seven orders of magnitude higher than the previously reported values [Feng et al., J. Appl. Phys. 108 (2010) 093118]. As a result, the high crystalline quality InGaN with high indium composition is a key factor in the device performance of III-nitride based solar cells.

Do dielectric nanostructures turn metallic in high-electric dc fields?

PubMed

Silaeva, E P; Arnoldi, L; Karahka, M L; Deconihout, B; Menand, A; Kreuzer, H J; Vella, A

2014-11-12

Three-dimensional dielectric nanostructures have been analyzed using field ion microscopy (FIM) to study the electric dc field penetration inside these structures. The field is proved to be screened within a few nanometers as theoretically calculated taking into account the high-field impact ionization process. Moreover, the strong dc field of the order of 0.1 V/Å at the surface inside a dielectric nanostructure modifies its band structure leading to a strong band gap shrinkage and thus to a strong metal-like optical absorption near the surface. This metal-like behavior was theoretically predicted using first-principle calculations and experimentally proved using laser-assisted atom probe tomography (APT). This work opens up interesting perspectives for the study of the performance of all field-effect nanodevices, such as nanotransistor or super capacitor, and for the understanding of the physical mechanisms of field evaporation of dielectric nanotips in APT.

Dynamical anisotropic response of black phosphorus under magnetic field

NASA Astrophysics Data System (ADS)

Liu, Xuefeng; Lu, Wei; Zhou, Xiaoying; Zhou, Yang; Zhang, Chenglong; Lai, Jiawei; Ge, Shaofeng; Sekhar, M. Chandra; Jia, Shuang; Chang, Kai; Sun, Dong

2018-04-01

Black phosphorus (BP) has emerged as a promising material candidate for next generation electronic and optoelectronic devices due to its high mobility, tunable band gap and highly anisotropic properties. In this work, polarization resolved ultrafast mid-infrared transient reflection spectroscopy measurements are performed to study the dynamical anisotropic optical properties of BP under magnetic fields up to 9 T. The relaxation dynamics of photoexcited carrier is found to be insensitive to the applied magnetic field due to the broadening of the Landau levels and large effective mass of carriers. While the anisotropic optical response of BP decreases with increasing magnetic field, its enhancement due to the excitation of hot carriers is similar to that without magnetic field. These experimental results can be well interpreted by the magneto-optical conductivity of the Landau levels of BP thin film, based on an effective k · p Hamiltonian and linear response theory. These findings suggest attractive possibilities of multi-dimensional control of anisotropic response (AR) of BP with light, electric and magnetic field, which further introduces BP to the fantastic magnetic field sensitive applications.

Plasma Oscillation Characterization of NASA's HERMeS Hall Thruster via High Speed Imaging

NASA Technical Reports Server (NTRS)

Huang, Wensheng; Kamhawi, Hani; Haag, Thomas W.

2016-01-01

The performance and facility effect characterization tests of NASA's 12.5-kW Hall Effect Rocket with Magnetic Shielding had been completed. As a part of these tests, three plasma oscillation characterization studies were performed to help determine operation settings and quantify margins. The studies included the magnetic field strength variation study, background pressure effect study, and cathode flow fraction study. Separate high-speed videos of the thruster including the cathode and of only the cathode were recorded. Breathing mode at 10-15 kHz and cathode gradient-driven mode at 60-75 kHz were observed. An additional high frequency (40-70 kHz) global oscillation mode with sinusoidal probability distribution function was identified.

The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing

NASA Astrophysics Data System (ADS)

Chang, Yi-Kuei; Hong, Franklin Chau-Nan

2009-05-01

A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min-1), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 105, a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm2 V-1 s-1. The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.

The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing.

PubMed

Chang, Yi-Kuei; Hong, Franklin Chau-Nan

2009-05-13

A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min(-1)), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 10(5), a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm(2) V(-1) s(-1). The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.

Effects of Near Field Pyroshock on the Performance of a Nitramine Nitrocellulose Propellant

NASA Technical Reports Server (NTRS)

Baca, Arcenio B.

2016-01-01

The overall purpose of this study is to investigate the effects of a pyroshock environment on the performance characteristics of a propellant used in pyrotechnic devices such as guillotine cutters. Near field pyroshock which is defined by acceleration amplitudes in excess of 10,000g at a frequency of greater than 10,000 Hz is a highly transient environment that has a known potential to cause failure in both structural and electronic components. A heritage pressure cartridge assembly which uses a nitramine nitrocellulose propellant with a known performance baseline will be exposed to a near field pyroshock event. The pressure cartridge will then be fired in an ambient closed bomb firing to collect pressure time history. The two performance characteristics that will be evaluated are the pressure amplitude and time to peak pressure. This data will be compared to the base-lined ambient closed bomb data to evaluate the effects of the shock on the performance of the propellant. It is expected that the pyroshock environment will cause brittle failures of the propellant increasing the surface area of said propellant. This increase of surface area should result in increased combustion rate which should show as an increased pressure peak and decreased time to peak pressure in the pressure time data.

Design of the DIRECT-project: interventions to increase job resources and recovery opportunities to improve job-related health, well-being, and performance outcomes in nursing homes

PubMed Central

2010-01-01

Background Because of high demands at work, nurses are at high risk for occupational burnout and physical complaints. The presence of job resources (such as job autonomy or social support) and recovery opportunities could counteract the adverse effect of high job demands. However, it is still unclear how job resources and recovery opportunities can be translated into effective workplace interventions aiming to improve employee health, well-being, and performance-related outcomes. The aim of the current research project is developing and implementing interventions to optimize job resources and recovery opportunities, which may lead to improved health, well-being and performance of nurses. Methods/design The DIRECT-project (DIsc Risk Evaluating Controlled Trial) is a longitudinal, quasi-experimental field study. Nursing home staff of 4 intervention wards and 4 comparison wards will be involved. Based on the results of a base-line survey, interventions will be implemented to optimize job resources and recovery opportunities. After 12 and 24 month the effect of the interventions will be investigated with follow-up surveys. Additionally, a process evaluation will be conducted to map factors that either stimulated or hindered successful implementation as well as the effectiveness of the interventions. Discussion The DIRECT-project fulfils a strong need for intervention research in the field of work, stress, performance, and health. The results could reveal (1) how interventions can be tailored to optimize job resources and recovery opportunities, in order to counteract job demands, and (2) what the effects of these interventions will be on health, well-being, and performance of nursing staff. PMID:20509923

Effect of In Situ Annealing Treatment on the Mobility and Morphology of TIPS-Pentacene-Based Organic Field-Effect Transistors.

PubMed

Yang, Fuqiang; Wang, Xiaolin; Fan, Huidong; Tang, Ying; Yang, Jianjun; Yu, Junsheng

2017-08-23

In this work, organic field-effect transistors (OFETs) with a bottom gate top contact structure were fabricated by using a spray-coating method, and the influence of in situ annealing treatment on the OFET performance was investigated. Compared to the conventional post-annealing method, the field-effect mobility of OFET with 60 °C in situ annealing treatment was enhanced nearly four times from 0.056 to 0.191 cm 2 /Vs. The surface morphologies and the crystallization of TIPS-pentacene films were characterized by optical microscope, atomic force microscope, and X-ray diffraction. We found that the increased mobility was mainly attributed to the improved crystallization and highly ordered TIPS-pentacene molecules.

Effect of In Situ Annealing Treatment on the Mobility and Morphology of TIPS-Pentacene-Based Organic Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Yang, Fuqiang; Wang, Xiaolin; Fan, Huidong; Tang, Ying; Yang, Jianjun; Yu, Junsheng

2017-08-01

In this work, organic field-effect transistors (OFETs) with a bottom gate top contact structure were fabricated by using a spray-coating method, and the influence of in situ annealing treatment on the OFET performance was investigated. Compared to the conventional post-annealing method, the field-effect mobility of OFET with 60 °C in situ annealing treatment was enhanced nearly four times from 0.056 to 0.191 cm2/Vs. The surface morphologies and the crystallization of TIPS-pentacene films were characterized by optical microscope, atomic force microscope, and X-ray diffraction. We found that the increased mobility was mainly attributed to the improved crystallization and highly ordered TIPS-pentacene molecules.

Germanium Based Field-Effect Transistors: Challenges and Opportunities

PubMed Central

Goley, Patrick S.; Hudait, Mantu K.

2014-01-01

The performance of strained silicon (Si) as the channel material for today’s metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed. PMID:28788569

Design of a cost-effective laser spot tracker

NASA Astrophysics Data System (ADS)

Artan, Göktuǧ Gencehan; Sari, Hüseyin

2017-05-01

One of the most important aspects of guided systems is detection. The most convenient detection in the sense of precision can be achieved with a laser spot tracker. This study deals with a military grade, high performance and cost-effective laser spot tracker for a guided system. The aim is to develop a high field of view system that will detect a laser spot from a distance of 3 kilometers in which the target is designated from 3 kilometers with a laser. The study basically consists of the system design, modeling, producing and the conducting performance tests of the whole system.

High-performance iron oxide nanoparticles for magnetic particle imaging - guided hyperthermia (hMPI)

NASA Astrophysics Data System (ADS)

Bauer, Lisa M.; Situ, Shu F.; Griswold, Mark A.; Samia, Anna Cristina S.

2016-06-01

Magnetic particle imaging (MPI) is an emerging imaging modality that allows the direct and quantitative mapping of iron oxide nanoparticles. In MPI, the development of tailored iron oxide nanoparticle tracers is paramount to achieving high sensitivity and good spatial resolution. To date, most MPI tracers being developed for potential clinical applications are based on spherical undoped magnetite nanoparticles. For the first time, we report on the systematic investigation of the effects of changes in chemical composition and shape anisotropy on the MPI performance of iron oxide nanoparticle tracers. We observed a 2-fold enhancement in MPI signal through selective doping of magnetite nanoparticles with zinc. Moreover, we demonstrated focused magnetic hyperthermia heating by adapting the field gradient used in MPI. By saturating the iron oxide nanoparticles outside of a field free region (FFR) with an external static field, we can selectively heat a target region in our test sample. By comparing zinc-doped magnetite cubic nanoparticles with undoped spherical nanoparticles, we could show a 5-fold improvement in the specific absorption rate (SAR) in magnetic hyperthermia while providing good MPI signal, thereby demonstrating the potential for high-performance focused hyperthermia therapy through an MPI-guided approach (hMPI).Magnetic particle imaging (MPI) is an emerging imaging modality that allows the direct and quantitative mapping of iron oxide nanoparticles. In MPI, the development of tailored iron oxide nanoparticle tracers is paramount to achieving high sensitivity and good spatial resolution. To date, most MPI tracers being developed for potential clinical applications are based on spherical undoped magnetite nanoparticles. For the first time, we report on the systematic investigation of the effects of changes in chemical composition and shape anisotropy on the MPI performance of iron oxide nanoparticle tracers. We observed a 2-fold enhancement in MPI signal through selective doping of magnetite nanoparticles with zinc. Moreover, we demonstrated focused magnetic hyperthermia heating by adapting the field gradient used in MPI. By saturating the iron oxide nanoparticles outside of a field free region (FFR) with an external static field, we can selectively heat a target region in our test sample. By comparing zinc-doped magnetite cubic nanoparticles with undoped spherical nanoparticles, we could show a 5-fold improvement in the specific absorption rate (SAR) in magnetic hyperthermia while providing good MPI signal, thereby demonstrating the potential for high-performance focused hyperthermia therapy through an MPI-guided approach (hMPI). Electronic supplementary information (ESI) available: Detailed IONP synthetic methods, description of magnetic particle relaxometer set-up, TEM of reference IONP (Senior Scientific PrecisionMRX™ 25 nm oleic acid-coated nanoparticles), concentration dependent PSF of all IONP samples, PSF and SAR of Zn-Sph and Zn-Cube mixture sample, upper right quadrant of field-dependent hysteresis curve labelled with static field strengths, and the magnetic hyperthermia temperature profiles with and without the presence of external magnetic fields. See DOI: 10.1039/c6nr01877g

Surface-directed molecular assembly of pentacene on monolayer graphene for high-performance organic transistors.

PubMed

Lee, Wi Hyoung; Park, Jaesung; Sim, Sung Hyun; Lim, Soojin; Kim, Kwang S; Hong, Byung Hee; Cho, Kilwon

2011-03-30

Organic electronic devices that use graphene electrodes have received considerable attention because graphene is regarded as an ideal candidate electrode material. Transfer and lithographic processes during fabrication of patterned graphene electrodes typically leave polymer residues on the graphene surfaces. However, the impact of these residues on the organic semiconductor growth mechanism on graphene surface has not been reported yet. Here, we demonstrate that polymer residues remaining on graphene surfaces induce a stand-up orientation of pentacene, thereby controlling pentacene growth such that the molecular assembly is optimal for charge transport. Thus, pentacene field-effect transistors (FETs) using source/drain monolayer graphene electrodes with polymer residues show a high field-effect mobility of 1.2 cm(2)/V s. In contrast, epitaxial growth of pentacene having molecular assembly of lying-down structure is facilitated by π-π interaction between pentacene and the clean graphene electrode without polymer residues, which adversely affects lateral charge transport at the interface between electrode and channel. Our studies provide that the obtained high field-effect mobility in pentacene FETs using monolayer graphene electrodes arises from the extrinsic effects of polymer residues as well as the intrinsic characteristics of the highly conductive, ultrathin two-dimensional monolayer graphene electrodes.

Enhanced and continuous electrostatic carrier doping on the SrTiO3 surface

PubMed Central

Eyvazov, A. B.; Inoue, I. H.; Stoliar, P.; Rozenberg, M. J.; Panagopoulos, C.

2013-01-01

Paraelectrical tuning of a charge carrier density as high as 1013 cm−2 in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we introduce the Parylene-C/Ta2O5 hybrid gate insulator and fabricate FET devices on single-crystalline SrTiO3, which has been regarded as a bedrock material for oxide electronics. The gate insulator accumulates up to ~1013cm−2 carriers, while the field-effect mobility is kept at 10 cm2/Vs even at room temperature. Further to the exceptional performance of our devices, the enhanced compatibility of high carrier density and high mobility revealed the mechanism for the long standing puzzle of the distribution of electrostatically doped carriers on the surface of SrTiO3. Namely, the formation and continuous evolution of field domains and current filaments.

Enhanced Performance of Gate-First p-Channel Metal-Insulator-Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition Based In situ Method

NASA Astrophysics Data System (ADS)

Kitano, Naomu; Horie, Shinya; Arimura, Hiroaki; Kawahara, Takaaki; Sakashita, Shinsuke; Nishida, Yukio; Yugami, Jiro; Minami, Takashi; Kosuda, Motomu; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2007-12-01

We demonstrated the use of an in situ metal/high-k fabrication method for improving the performance of metal-insulator-semiconductor field-effect transistors (MISFETs). Gate-first pMISFETs with polycrystalline silicon (poly-Si)/TiN/HfSiON stacks were fabricated by techniques based on low-damage physical vapor deposition, in which high-quality HfSiON dielectrics were formed by the interface reaction between an ultrathin metal-Hf layer (0.5 nm thick) and a SiO2 underlayer, and TiN electrodes were continuously deposited on the gate dielectrics without exposure to air. Gate-first pMISFETs with high carrier mobility and a low threshold voltage (Vth) were realized by reducing the carbon impurity in the gate stacks and improving the Vth stability against thermal treatment. As a result, we obtained superior current drivability (Ion = 350 μA/μm at Ioff = 200 pA/μm), which corresponds to a 13% improvement over that of conventional chemical vapor deposition-based metal/high-k devices.

Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions.

PubMed

Yang, Tiefeng; Zheng, Biyuan; Wang, Zhen; Xu, Tao; Pan, Chen; Zou, Juan; Zhang, Xuehong; Qi, Zhaoyang; Liu, Hongjun; Feng, Yexin; Hu, Weida; Miao, Feng; Sun, Litao; Duan, Xiangfeng; Pan, Anlian

2017-12-04

High-quality two-dimensional atomic layered p-n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe 2 /SnS 2 vertical bilayer p-n junctions on SiO 2 /Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10 -14 A and a highest on-off ratio of up to 10 7 . Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems.

Detection of H5 and H7 highly pathogenic avian influenza virus with lateral flow devices: performance with healthy, sick and dead chickens

USDA-ARS?s Scientific Manuscript database

Rapid detection of highly pathogenic avian influenza virus (HPAIV) in the field is critical for effective disease control and to differentiate it from other diseases, such as Newcastle disease. Lateral flow devices (LFD) are commercially available and provide a fast, highly specific, on-site test fo...

Numerical Investigation of Fuel Distribution Effect on Flow and Temperature Field in a Heavy Duty Gas Turbine Combustor

NASA Astrophysics Data System (ADS)

Deng, Xiaowen; Xing, Li; Yin, Hong; Tian, Feng; Zhang, Qun

2018-03-01

Multiple-swirlers structure is commonly adopted for combustion design strategy in heavy duty gas turbine. The multiple-swirlers structure might shorten the flame brush length and reduce emissions. In engineering application, small amount of gas fuel is distributed for non-premixed combustion as a pilot flame while most fuel is supplied to main burner for premixed combustion. The effect of fuel distribution on the flow and temperature field related to the combustor performance is a significant issue. This paper investigates the fuel distribution effect on the combustor performance by adjusting the pilot/main burner fuel percentage. Five pilot fuel distribution schemes are considered including 3 %, 5 %, 7 %, 10 % and 13 %. Altogether five pilot fuel distribution schemes are computed and deliberately examined. The flow field and temperature field are compared, especially on the multiple-swirlers flow field. Computational results show that there is the optimum value for the base load of combustion condition. The pilot fuel percentage curve is calculated to optimize the combustion operation. Under the combustor structure and fuel distribution scheme, the combustion achieves high efficiency with acceptable OTDF and low NOX emission. Besides, the CO emission is also presented.

Phase-field modeling of liquids splitting between separating surfaces and its application to high-resolution roll-based printing technologies

NASA Astrophysics Data System (ADS)

Hizir, F. E.; Hardt, D. E.

2017-05-01

An in-depth understanding of the liquid transport in roll-based printing systems is essential for advancing the roll-based printing technology and enhancing the performance of the printed products. In this study, phase-field simulations are performed to characterize the liquid transport in roll-based printing systems, and the phase-field method is shown to be an effective tool to simulate the liquid transport. In the phase-field simulations, the liquid transport through the ink transfer rollers is approximated as the stretching and splitting of liquid bridges with pinned or moving contact lines between vertically separating surfaces. First, the effect of the phase-field parameters and the mesh characteristics on the simulation results is examined. The simulation results show that a sharp interface limit is approached as the capillary width decreases while keeping the mobility proportional to the capillary width squared. Close to the sharp interface limit, the mobility changes over a specified range are observed to have no significant influence on the simulation results. Next, the ink transfer from the cells on the surface of an ink-metering roller to the surface of stamp features is simulated. Under negligible inertial effects and in the absence of gravity, the amount of liquid ink transferred from an axisymmetric cell with low surface wettability to a stamp with high surface wettability is found to increase as the cell sidewall steepness and the cell surface wettability decrease and the stamp surface wettability and the capillary number increase. Strategies for improving the resolution and quality of roll-based printing are derived based on an analysis of the simulation results. The application of novel materials that contain cells with irregular surface topography to stamp inking in high-resolution roll-based printing is assessed.

KENIS: a high-performance thermal imager developed using the OSPREY IR detector

NASA Astrophysics Data System (ADS)

Goss, Tristan M.; Baker, Ian M.

2000-07-01

`KENIS', a complete, high performance, compact and lightweight thermal imager, is built around the `OSPREY' infrared detector from BAE systems Infrared Ltd. The `OSPREY' detector uses a 384 X 288 element CMT array with a 20 micrometers pixel size and cooled to 120 K. The relatively small pixel size results in very compact cryogenics and optics, and the relatively high operating temperature provides fast start-up time, low power consumption and long operating life. Requiring single input supply voltage and consuming less than 30 watts of power, the thermal imager generates both analogue and digital format outputs. The `KENIS' lens assembly features a near diffraction limited dual field-of-view optical system that has been designed to be athermalized and switches between fields in less than one second. The `OSPREY' detector produces near background limited performance with few defects and has special, pixel level circuitry to eliminate crosstalk and blooming effects. This, together with signal processing based on an effective two-point fixed pattern noise correction algorithm, results in high quality imagery and a thermal imager that is suitable for most traditional thermal imaging applications. This paper describes the rationale used in the development of the `KENIS' thermal imager, and highlights the potential performance benefits to the user's system, primarily gained by selecting the `OSPREY' infra-red detector within the core of the thermal imager.

Nature-Inspired Capillary-Driven Welding Process for Boosting Metal-Oxide Nanofiber Electronics.

PubMed

Meng, You; Lou, Kaihua; Qi, Rui; Guo, Zidong; Shin, Byoungchul; Liu, Guoxia; Shan, Fukai

2018-06-20

Recently, semiconducting nanofiber networks (NFNs) have been considered as one of the most promising platforms for large-area and low-cost electronics applications. However, the high contact resistance among stacking nanofibers remained to be a major challenge, leading to poor device performance and parasitic energy consumption. In this report, a controllable welding technique for NFNs was successfully demonstrated via a bioinspired capillary-driven process. The interfiber connections were well-achieved via a cooperative concept, combining localized capillary condensation and curvature-induced surface diffusion. With the improvements of the interfiber connections, the welded NFNs exhibited enhanced mechanical property and high electrical performance. The field-effect transistors (FETs) based on the welded Hf-doped In 2 O 3 (InHfO) NFNs were demonstrated for the first time. Meanwhile, the mechanisms involved in the grain-boundary modulation for polycrystalline metal-oxide nanofibers were discussed. When the high-k ZrO x dielectric thin films were integrated into the FETs, the field-effect mobility and operating voltage were further improved to be 25 cm 2 V -1 s -1 and 3 V, respectively. This is one of the best device performances among the reported nanofibers-based FETs. These results demonstrated the potencies of the capillary-driven welding process and grain-boundary modulation mechanism for metal-oxide NFNs, which could be applicable for high-performance, large-scale, and low-power functional electronics.

Effects of Different Conditioning Activities on 100-m Dash Performance in High School Track and Field Athletes.

PubMed

Ferreira-Júnior, João B; Guttierres, Ana P M; Encarnação, Irismar G A; Lima, Jorge R P; Borba, Diego A; Freitas, Eduardo D S; Bemben, Michael G; Vieira, Carlos A; Bottaro, Martim

2018-06-01

This study compared the effects of different conditioning activities on the 100-m dash performance of 11 male, high school track and field athletes (mean age = 16.3; SD = 1.2 years). Participants performed a 100-m dash seven minutes after each of four randomized conditioning protocols, with each condition and 100-m dash separated by 3-10 days. The conditioning protocols were (a) control, no conditioning activity; (b) weighted plyometric, three sets of 10 repetitions of alternate leg bounding with additional load of 10% of the body mass; (c) free sprint, two 20-m sprints; and (d) resisted sprint (RS), two 20-m resisted sprints using an elastic tubing tool. We obtained session ratings of perceived exertion (SRPE) immediately after each conditioning protocol. There were no significant differences between any of the three experimental conditioning activities on 100-m sprint time, but the RS protocol improved 100-m sprint time compared with the control (no conditioning) protocol ( p < .001). The RS also led to greater sprint velocity and higher SRPE compared with the control condition ( p < .01). There was no significant association between SRPE and 100-m performance ( p = .77, r = .05). These results suggest a benefit for young male track and field athletes to the elastic tubing warm-up activities prior to the 100-m dash.

Effects of age, maturity and body dimensions on match running performance in highly trained under-15 soccer players.

PubMed

Buchheit, Martin; Mendez-Villanueva, Alberto

2014-01-01

The aim of the present study was to compare, in 36 highly trained under-15 soccer players, the respective effects of age, maturity and body dimensions on match running performance. Maximal sprinting (MSS) and aerobic speeds were estimated. Match running performance was analysed with GPS (GPSport, 1 Hz) during 19 international friendly games (n = 115 player-files). Total distance and distance covered >16 km h(-1) (D > 16 km h(-1)) were collected. Players advanced in age and/or maturation, or having larger body dimensions presented greater locomotor (Cohen's d for MSS: 0.5-1.0, likely to almost certain) and match running performances (D > 16 km h(-1): 0.2-0.5, possibly to likely) than their younger, less mature and/or smaller teammates. These age-, maturation- and body size-related differences were of larger magnitude for field test measures versus match running performance. Compared with age and body size (unclear to likely), maturation (likely to almost certainly for all match variables) had the greatest impact on match running performance. The magnitude of the relationships between age, maturation and body dimensions and match running performance were position-dependent. Within a single age-group in the present player sample, maturation had a substantial impact on match running performance, especially in attacking players. Coaches may need to consider players' maturity status when assessing their on-field playing performance.

Growth anisotropy effect of bulk high temperature superconductors on the levitation performance in the applied magnetic field

NASA Astrophysics Data System (ADS)

Zheng, J.; Liao, X. L.; Jing, H. L.; Deng, Z. G.; Yen, F.; Wang, S. Y.; Wang, J. S.

2013-10-01

Growth anisotropies of bulk high temperature superconductors (HTSCs) fabricated by a top-seeded melt texture growth process, that is, different pinning effect in the growth sectors (GSs) and growth sector boundaries (GSBs), possess effect on the macro flux trapping and levitation performance of bulk HTSCs. Previous work (Physics Procedia, 36 (2012) 1043) has found that the bulk HTSC array with aligned GSB pattern (AGSBP) exhibits better capability for levitation and suppression of levitation force decay above a permanent magnet guideway (PMG) compared with misaligned GSB pattern (MGSBP). In this paper, we further examine this growth anisotropy effect on the maglev performance of a double-layer bulk HTSC. In contrast to reported trapped flux cases (Supercond. Sci. Technol. 19 (2006) S466), the two superposed bulk HTSCs with same AGSBP with PMG are found to show better maglev performance. These series of results are helpful and support a new way for the performance optimization of present HTS maglev systems.

K-shell spectroscopy of silicon ions as diagnostic for high electric fields

NASA Astrophysics Data System (ADS)

Loetzsch, R.; Jäckel, O.; Höfer, S.; Kämpfer, T.; Polz, J.; Uschmann, I.; Kaluza, M. C.; Förster, E.; Stambulchik, E.; Kroupp, E.; Maron, Y.

2012-11-01

We developed a detection scheme, capable of measuring X-ray line shape of tracer ions in μm thick layers at the rear side of a target foil irradiated by ultra intense laser pulses. We performed simulations of the effect of strong electric fields on the K-shell emission of silicon and developed a spectrometer dedicated to record this emission. The combination of a cylindrically bent crystal in von Hámos geometry and a CCD camera with its single photon counting capability allows for a high dynamic range of the instrument and background free spectra. This approach will be used in future experiments to study electric fields of the order of TV/m at high density plasmas close to solid density.

Field electron emission enhancement in lithium implanted and annealed nitrogen-incorporated nanocrystalline diamond films

NASA Astrophysics Data System (ADS)

Sankaran, K. J.; Srinivasu, K.; Yeh, C. J.; Thomas, J. P.; Drijkoningen, S.; Pobedinskas, P.; Sundaravel, B.; Leou, K. C.; Leung, K. T.; Van Bael, M. K.; Schreck, M.; Lin, I. N.; Haenen, K.

2017-06-01

The field electron emission (FEE) properties of nitrogen-incorporated nanocrystalline diamond films were enhanced due to Li-ion implantation/annealing processes. Li-ion implantation mainly induced the formation of electron trap centers inside diamond grains, whereas post-annealing healed the defects and converted the a-C phase into nanographite, forming conduction channels for effective transport of electrons. This resulted in a high electrical conductivity of 11.0 S/cm and enhanced FEE performance with a low turn-on field of 10.6 V/μm, a high current density of 25.5 mA/cm2 (at 23.2 V/μm), and a high lifetime stability of 1,090 min for nitrogen incorporated nanocrystalline diamond films.

N-Type 2D Organic Single Crystals for High-Performance Organic Field-Effect Transistors and Near-Infrared Phototransistors.

PubMed

Wang, Cong; Ren, Xiaochen; Xu, Chunhui; Fu, Beibei; Wang, Ruihao; Zhang, Xiaotao; Li, Rongjin; Li, Hongxiang; Dong, Huanli; Zhen, Yonggang; Lei, Shengbin; Jiang, Lang; Hu, Wenping

2018-04-01

Organic field-effect transistors and near-infrared (NIR) organic phototransistors (OPTs) have attracted world's attention in many fields in the past decades. In general, the sensitivity, distinguishing the signal from noise, is the key parameter to evaluate the performance of NIR OPTs, which is decided by responsivity and dark current. 2D single crystal films of organic semiconductors (2DCOS) are promising functional materials due to their long-range order in spite of only few molecular layers. Herein, for the first time, air-stable 2DCOS of n-type organic semiconductors (a furan-thiophene quinoidal compound, TFT-CN) with strong absorbance around 830 nm, by the facile drop-casting method on the surface of water are successfully prepared. Almost millimeter-sized TFT-CN 2DCOS are obtained and their thickness is below 5 nm. A competitive field-effect electron mobility (1.36 cm 2 V -1 s -1 ) and high on/off ratio (up to 10 8 ) are obtained in air. Impressively, the ultrasensitive NIR phototransistors operating at the off-state exhibit a very low dark current of ≈0.3 pA and an ultrahigh detectivity (D*) exceeding 6 × 10 14 Jones because the devices can operate in full depletion at the off-state, superior to the majority of the reported organic-based NIR phototransistors. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Intrinsically stretchable and healable semiconducting polymer for organic transistors

NASA Astrophysics Data System (ADS)

Oh, Jin Young; Rondeau-Gagné, Simon; Chiu, Yu-Cheng; Chortos, Alex; Lissel, Franziska; Wang, Ging-Ji Nathan; Schroeder, Bob C.; Kurosawa, Tadanori; Lopez, Jeffrey; Katsumata, Toru; Xu, Jie; Zhu, Chenxin; Gu, Xiaodan; Bae, Won-Gyu; Kim, Yeongin; Jin, Lihua; Chung, Jong Won; Tok, Jeffrey B.-H.; Bao, Zhenan

2016-11-01

Thin-film field-effect transistors are essential elements of stretchable electronic devices for wearable electronics. All of the materials and components of such transistors need to be stretchable and mechanically robust. Although there has been recent progress towards stretchable conductors, the realization of stretchable semiconductors has focused mainly on strain-accommodating engineering of materials, or blending of nanofibres or nanowires into elastomers. An alternative approach relies on using semiconductors that are intrinsically stretchable, so that they can be fabricated using standard processing methods. Molecular stretchability can be enhanced when conjugated polymers, containing modified side-chains and segmented backbones, are infused with more flexible molecular building blocks. Here we present a design concept for stretchable semiconducting polymers, which involves introducing chemical moieties to promote dynamic non-covalent crosslinking of the conjugated polymers. These non-covalent crosslinking moieties are able to undergo an energy dissipation mechanism through breakage of bonds when strain is applied, while retaining high charge transport abilities. As a result, our polymer is able to recover its high field-effect mobility performance (more than 1 square centimetre per volt per second) even after a hundred cycles at 100 per cent applied strain. Organic thin-film field-effect transistors fabricated from these materials exhibited mobility as high as 1.3 square centimetres per volt per second and a high on/off current ratio exceeding a million. The field-effect mobility remained as high as 1.12 square centimetres per volt per second at 100 per cent strain along the direction perpendicular to the strain. The field-effect mobility of damaged devices can be almost fully recovered after a solvent and thermal healing treatment. Finally, we successfully fabricated a skin-inspired stretchable organic transistor operating under deformations that might be expected in a wearable device.

Intrinsically stretchable and healable semiconducting polymer for organic transistors.

PubMed

Oh, Jin Young; Rondeau-Gagné, Simon; Chiu, Yu-Cheng; Chortos, Alex; Lissel, Franziska; Wang, Ging-Ji Nathan; Schroeder, Bob C; Kurosawa, Tadanori; Lopez, Jeffrey; Katsumata, Toru; Xu, Jie; Zhu, Chenxin; Gu, Xiaodan; Bae, Won-Gyu; Kim, Yeongin; Jin, Lihua; Chung, Jong Won; Tok, Jeffrey B-H; Bao, Zhenan

2016-11-17

Thin-film field-effect transistors are essential elements of stretchable electronic devices for wearable electronics. All of the materials and components of such transistors need to be stretchable and mechanically robust. Although there has been recent progress towards stretchable conductors, the realization of stretchable semiconductors has focused mainly on strain-accommodating engineering of materials, or blending of nanofibres or nanowires into elastomers. An alternative approach relies on using semiconductors that are intrinsically stretchable, so that they can be fabricated using standard processing methods. Molecular stretchability can be enhanced when conjugated polymers, containing modified side-chains and segmented backbones, are infused with more flexible molecular building blocks. Here we present a design concept for stretchable semiconducting polymers, which involves introducing chemical moieties to promote dynamic non-covalent crosslinking of the conjugated polymers. These non-covalent crosslinking moieties are able to undergo an energy dissipation mechanism through breakage of bonds when strain is applied, while retaining high charge transport abilities. As a result, our polymer is able to recover its high field-effect mobility performance (more than 1 square centimetre per volt per second) even after a hundred cycles at 100 per cent applied strain. Organic thin-film field-effect transistors fabricated from these materials exhibited mobility as high as 1.3 square centimetres per volt per second and a high on/off current ratio exceeding a million. The field-effect mobility remained as high as 1.12 square centimetres per volt per second at 100 per cent strain along the direction perpendicular to the strain. The field-effect mobility of damaged devices can be almost fully recovered after a solvent and thermal healing treatment. Finally, we successfully fabricated a skin-inspired stretchable organic transistor operating under deformations that might be expected in a wearable device.

The Nanoelectric Modeling Tool (NEMO) and Its Expansion to High Performance Parallel Computing

NASA Technical Reports Server (NTRS)

Klimeck, G.; Bowen, C.; Boykin, T.; Oyafuso, F.; Salazar-Lazaro, C.; Stoica, A.; Cwik, T.

1998-01-01

Material variations on an atomic scale enable the quantum mechanical functionality of devices such as resonant tunneling diodes (RTDs), quantum well infrared photodetectors (QWIPs), quantum well lasers, and heterostructure field effect transistors (HFETs).

Roles of Fullerene-Based Interlayers in Enhancing the Performance of Organometal Perovskite Thin-Film Solar Cells

DOE PAGES

Liang, Po-Wei; Chueh, Chu-Chen; Williams, Spencer T.; ...

2015-02-27

Roles of fullerene-based interlayers in enhancing the performance of organometal perovskite thin-film solar cells are elucidated. By studying various fullerenes, a clear correlation between the electron mobility of fullerenes and the resulting performance of derived devices is determined. The metallic characteristics of the bilayer perovskite/fullerene field-effect transistor indicates an effective charge redistribution occurring at the corresponding interface. Lastly, a conventional perovskite thin-film solar cell derived from the C 60 electron-transporting layer (ETL) affords a high power conversion efficiency of 15.4%.

Integrated approach for stress analysis of high performance diesel engine cylinder head

NASA Astrophysics Data System (ADS)

Chainov, N. D.; Myagkov, L. L.; Malastowski, N. S.; Blinov, A. S.

2018-03-01

Growing thermal and mechanical loads due to development of engines with high level of a mean effective pressure determine requirements to cylinder head durability. In this paper, computational schemes for thermal and mechanical stress analysis of a high performance diesel engine cylinder head were described. The most important aspects in this approach are the account of temperature fields of conjugated details (valves and saddles), heat transfer modeling in a cooling jacket of a cylinder head and topology optimization of the detail force scheme. Simulation results are shown and analyzed.

Growth-substrate induced performance degradation in chemically synthesized monolayer MoS{sub 2} field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amani, Matin; Chin, Matthew L.; Mazzoni, Alexander L.

2014-05-19

We report on the electronic transport properties of single-layer thick chemical vapor deposition (CVD) grown molybdenum disulfide (MoS{sub 2}) field-effect transistors (FETs) on Si/SiO{sub 2} substrates. MoS{sub 2} has been extensively investigated for the past two years as a potential semiconductor analogue to graphene. To date, MoS{sub 2} samples prepared via mechanical exfoliation have demonstrated field-effect mobility values which are significantly higher than that of CVD-grown MoS{sub 2}. In this study, we will show that the intrinsic electronic performance of CVD-grown MoS{sub 2} is equal or superior to that of exfoliated material and has been possibly masked by a combinationmore » of interfacial contamination on the growth substrate and residual tensile strain resulting from the high-temperature growth process. We are able to quantify this strain in the as-grown material using pre- and post-transfer metrology and microscopy of the same crystals. Moreover, temperature-dependent electrical measurements made on as-grown and transferred MoS{sub 2} devices following an identical fabrication process demonstrate the improvement in field-effect mobility.« less

A 360-degree floating 3D display based on light field regeneration.

PubMed

Xia, Xinxing; Liu, Xu; Li, Haifeng; Zheng, Zhenrong; Wang, Han; Peng, Yifan; Shen, Weidong

2013-05-06

Using light field reconstruction technique, we can display a floating 3D scene in the air, which is 360-degree surrounding viewable with correct occlusion effect. A high-frame-rate color projector and flat light field scanning screen are used in the system to create the light field of real 3D scene in the air above the spinning screen. The principle and display performance of this approach are investigated in this paper. The image synthesis method for all the surrounding viewpoints is analyzed, and the 3D spatial resolution and angular resolution of the common display zone are employed to evaluate display performance. The prototype is achieved and the real 3D color animation image has been presented vividly. The experimental results verified the representability of this method.

Autophagy Is a Promoter for Aerobic Exercise Performance during High Altitude Training

PubMed Central

Zhang, Ying

2018-01-01

High altitude training is one of the effective strategies for improving aerobic exercise performance at sea level via altitude acclimatization, thereby improving oxygen transport and/or utilization. But its underlying molecular mechanisms on physiological functions and exercise performance of athletes are still vague. More recent evidence suggests that the recycling of cellular components by autophagy is an important process of the body involved in the adaptive responses to exercise. Whether high altitude training can activate autophagy or whether high altitude training can improve exercise performance through exercise-induced autophagy is still unclear. In this narrative review article, we will summarize current research advances in the improvement of exercise performance through high altitude training and its reasonable molecular mechanisms associated with autophagy, which will provide a new field to explore the molecular mechanisms of adaptive response to high altitude training. PMID:29849885

Dependence of interface charge trapping on channel engineering in pentacene field effect transistors.

PubMed

Lee, Sunwoo; Park, Junghyuck; Park, In-Sung; Ahn, Jinho

2014-07-01

We investigate the dependence of charge carrier mobility by trap states at various interface regions through channel engineering. Prior to evaluation of interface trap density, the electrical performance in pentaene field effect transistors (FET) with high-k gate oxide are also investigated depending on four channel engineering. As a channel engineering, gas treatment, coatings of thin polymer layer, and chemical surface modification using small molecules were carried out. After channel engineering, the performance of device as well as interface trap density calculated by conductance method are remarkably improved. It is found that the reduced interface trap density is closely related to decreasing the sub-threshold swing and improving the mobility. Particularly, we also found that performance of device such as mobility, subthreshold swing, and interface trap density after gas same is comparable to those of OTS.

Effects of a Novel Cooling Shirt on Various Physical Performance Parameters in Elite Athletes

DTIC Science & Technology

2015-06-03

operations and sport matches. The primary purpose of this short-term field observation was to determine the effects of a technical cooling shirt and...limit these individuals’ ability to sustain and satisfactorily continue a high level of performance required during intense ground operations and sport ...specially cut-to-size cryotherapy material in place. The subjects were then counter-balanced, with half of the subjects “loaded” with the cooling material

Stress modulation of cellular metabolic sensors: interaction of stress from temperature and rainfall on the intertidal limpet Cellana toreuma.

PubMed

Dong, Yun-Wei; Han, Guo-Dong; Huang, Xiong-Wei

2014-09-01

In the natural environment, organisms are exposed to large variations in physical conditions. Quantifying such physiological responses is, however, often performed in laboratory acclimation studies, in which usually only a single factor is varied. In contrast, field acclimatization may expose organisms to concurrent changes in several environmental variables. The interactions of these factors may have strong effects on organismal function. In particular, rare events that occur stochastically and have relatively short duration may have strong effects. The present experiments studied levels of expression of several genes associated with cellular stress and metabolic regulation in a field population of limpet Cellana toreuma that encountered a wide range of temperatures plus periodic rain events. Physiological responses to these variable conditions were quantified by measuring levels of mRNA of genes encoding heat-shock proteins (Hsps) and metabolic sensors (AMPKs and Sirtuin 1). Our results reveal high ratios of individuals in upregulation group of stress-related gene expression at high temperature and rainy days, indicating the occurrence of stress from both prevailing high summer temperatures and occasional rainfall during periods of emersion. At high temperature, stress due to exposure to rainfall may be more challenging than heat stress alone. The highly variable physiological performances of limpets in their natural habitats indicate the possible differences in capability for physiological regulation among individuals. Our results emphasize the importance of studies of field acclimatization in unravelling the effects of environmental change on organisms, notably in the context of multiple changes in abiotic factors that are accompanying global change. © 2014 John Wiley & Sons Ltd.

Heat Treatment of Iron-Carbon Alloys in a Magnetic Field (Phase 2)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ludtka, Gerard Michael

Thermomagnetic processing was shown to shift the phase transformation temperatures and therefore microstructural evolution in the high performance engine valve spring 9254 steel alloy by applying a high magnetic field during cooling. These effects would be anticipated to improve performance such as high cycle fatigue as demonstrated in prior projects. Thermomagnetic processing of gears and crank shafts was constrained by the size of the prototype equipment currently available at ORNL. However, the commercial procurement viability of production scale 9-Tesla, 16-inch diameter bore thermomagnetic processing equipment for truck idler gears up to ~11-inch diameter and potential crank shaft applications was shown,more » as multiple superconducting magnet manufacturing companies (in conjunction with an induction heat treating company, AjaxTOCCO Magnethermic) offered cryogen-free or cryocooler equipment designs to Cummins.« less

Silicon Field Effect Transistors as Dual-Use Sensor-Heater Hybrids

PubMed Central

Reddy, Bobby; Elibol, Oguz H.; Nair, Pradeep R.; Dorvel, Brian R.; Butler, Felice; Ahsan, Zahab; Bergstrom, Donald E.; Alam, Muhammad A.; Bashir, Rashid

2011-01-01

We demonstrate the temperature mediated applications of a previously proposed novel localized dielectric heating method on the surface of dual purpose silicon field effect transistor (FET) sensor-heaters and perform modeling and characterization of the underlying mechanisms. The FETs are first shown to operate as electrical sensors via sensitivity to changes in pH in ionic fluids. The same devices are then demonstrated as highly localized heaters via investigation of experimental heating profiles and comparison to simulation results. These results offer further insight into the heating mechanism and help determine the spatial resolution of the technique. Two important biosensor platform applications spanning different temperature ranges are then demonstrated: a localized heat-mediated DNA exchange reaction and a method for dense selective functionalization of probe molecules via the heat catalyzed complete desorption and reattachment of chemical functionalization to the transistor surfaces. Our results show that the use of silicon transistors can be extended beyond electrical switching and field-effect sensing to performing localized temperature controlled chemical reactions on the transistor itself. PMID:21214189

Homogenous BSCCO-2212 Round Wires for Very High Field Magnets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dr. Scott Campbell

2012-06-30

The performance demands on modern particle accelerators generate a relentless push towards higher field magnets. In turn, advanced high field magnet development places increased demands on superconducting materials. Nb3Sn conductors have been used to achieve 16 T in a prototype dipole magnet and are thought to have the capability for {approx}18 T for accelerator magnets (primarily dipoles but also higher order multipole magnets). However there have been suggestions and proposals for such magnets higher than 20 T. The High Energy Physics Community (HEP) has identified important new physics opportunities that are enabled by extremely high field magnets: 20 to 50more » T solenoids for muon cooling in a muon collider (impact: understanding of neutrinos and dark matter); and 20+ T dipoles and quadrupoles for high energy hadron colliders (impact: discovery reach far beyond present). This proposal addresses the latest SBIR solicitation that calls for grant applications that seek to develop new or improved superconducting wire technologies for magnets that operate at a minimum of 12 Tesla (T) field, with increases up to 15 to 20 T sought in the near future (three to five years). The long-term development of accelerator magnets with fields greater than 20 T will require superconducting wires having significantly better high-field properties than those possessed by current Nb{sub 3}Sn or other A15 based wires. Given the existing materials science base for Bi-2212 wire processing, we believe that Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub y} (Bi-2212) round wires can be produced in km-long piece lengths with properties suitable to meet both the near term and long term needs of the HEP community. The key advance will be the translation of this materials science base into a robust, high-yield wire technology. While the processing and application of A15 materials have advanced to a much higher level than those of the copper oxide-based, high T{sub c} (HTS) counterparts, the HTS materials have the very significant advantage of an extremely high H{sub c2}. For this reason, Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub y} (Bi-2212, or 2212) in the form of a multifilamentary Ag alloy matrix composite is beginning to attract the interest of the magnet community for future extremely high-field magnets or magnet-insert coils for 4.2K operation. Fig. 1 shows an example of excellent JE (engineering current density) in Bi-2212 round wire at fields up to 45 T, demonstrating the potential for high field applications of this material. For comparison, the Nb{sub 3}Sn wires used in magnets in the 16-18 T range typically perform with J{sub E} in the range 200-500 A/mm{sup 2}; the Bi-2212 wire retains this level of performance to fields at least as high as 45 T, and probably significantly higher. Bi-2212 conductors have in fact been used to generate a 25 T field in a superconducting insert magnet. These two factors- the very high field critical current performance of Bi-2212, and the already demonstrated capability of this material for high field magnets up to 25 T, strongly suggest this material as a leading contender for the next generation high field superconducting (HFS) wire. This potential was recognized by the US Academy of Science's Committee on Opportunities in High Magnetic Field Science. Their report of the same name specifically calls out the high field potential for this material, and suggests that 30 T magnets appear feasible based on the performance of 2212. There are several requirements for HFS conductors. The most obvious is J{sub E} (B, T), the engineering current density at the field and temperature of operation. As shown in Fig. 1, Bi-2212 excels in this regard. Stability requirements for magnets dictate that the effective filament diameter should be less than 30 micrometers, something that Bi-2212 multifilamentary wire can uniquely satisfy among the HFS superconducting wire technologies. Additional requirements include mechanical properties that prevent stress limitation of J{sub E} at the operating conditions, resistive transition index (n-value) sufficiently high to meet the field decay requirements (in persistent magnets), piece lengths long enough to wind coils, and acceptably low costs. HEP has traditionally used very high current magnets made from Rutherford cables, and the ability to be cabled is another key advantage. Very high on the list of materials able to fulfill the requirements above is Bi-2212 round wire. Both cables and high field coils on a small scale have been demonstrated using this material. By contrast, YBCO is a single-filament tape that is not easy to cable. As shown in Figure 1 these tapes are highly anisotropic in their current density. In the good orientation the performance is considerably better than Bi-2212, however at the highest fields measured, the isotropic current behavior of 2212 exceeds the bad orientation of YBCO.« less

Development of a High-speed Electromagnetic Repulsion Mechanism for High-voltage Vacuum Circuit Breakers

NASA Astrophysics Data System (ADS)

Tsukima, Mitsuru; Takeuchi, Toshie; Koyama, Kenichi; Yoshiyasu, Hajimu

This paper presents a design and testing of a new high-speed electromagnetic driving mechanism for a high-voltage vacuum circuit breaker (VCB). This mechanism is based on a high-speed electromagnetic repulsion and a permanent magnet spring (PMS). This PMS is introduced instead of the conventional disk spring due to its low spring energy and more suitable force characteristics for VCB application. The PMS has been optimally designed by the 3d non-linear finite-elements magnetic field analysis and investigated its internal friction and eddy-current effect. Furthermore, we calculated the dynamic of this mechanism coupling with the electromagnetic field and circuit analysis, in order to satisfy the operating characteristics—contact velocity, response time and so on, required for the high-speed VCB. A prototype VCB, which was built based on the above analysis shows sufficient operating performance. Finally, the short circuit interruption tests were carried out with this prototype breaker, and we have been able to verify its satisfying performance.

Towards Building a High Performance Spatial Query System for Large Scale Medical Imaging Data.

PubMed

Aji, Ablimit; Wang, Fusheng; Saltz, Joel H

2012-11-06

Support of high performance queries on large volumes of scientific spatial data is becoming increasingly important in many applications. This growth is driven by not only geospatial problems in numerous fields, but also emerging scientific applications that are increasingly data- and compute-intensive. For example, digital pathology imaging has become an emerging field during the past decade, where examination of high resolution images of human tissue specimens enables more effective diagnosis, prediction and treatment of diseases. Systematic analysis of large-scale pathology images generates tremendous amounts of spatially derived quantifications of micro-anatomic objects, such as nuclei, blood vessels, and tissue regions. Analytical pathology imaging provides high potential to support image based computer aided diagnosis. One major requirement for this is effective querying of such enormous amount of data with fast response, which is faced with two major challenges: the "big data" challenge and the high computation complexity. In this paper, we present our work towards building a high performance spatial query system for querying massive spatial data on MapReduce. Our framework takes an on demand index building approach for processing spatial queries and a partition-merge approach for building parallel spatial query pipelines, which fits nicely with the computing model of MapReduce. We demonstrate our framework on supporting multi-way spatial joins for algorithm evaluation and nearest neighbor queries for microanatomic objects. To reduce query response time, we propose cost based query optimization to mitigate the effect of data skew. Our experiments show that the framework can efficiently support complex analytical spatial queries on MapReduce.

Towards Building a High Performance Spatial Query System for Large Scale Medical Imaging Data

PubMed Central

Aji, Ablimit; Wang, Fusheng; Saltz, Joel H.

2013-01-01

Support of high performance queries on large volumes of scientific spatial data is becoming increasingly important in many applications. This growth is driven by not only geospatial problems in numerous fields, but also emerging scientific applications that are increasingly data- and compute-intensive. For example, digital pathology imaging has become an emerging field during the past decade, where examination of high resolution images of human tissue specimens enables more effective diagnosis, prediction and treatment of diseases. Systematic analysis of large-scale pathology images generates tremendous amounts of spatially derived quantifications of micro-anatomic objects, such as nuclei, blood vessels, and tissue regions. Analytical pathology imaging provides high potential to support image based computer aided diagnosis. One major requirement for this is effective querying of such enormous amount of data with fast response, which is faced with two major challenges: the “big data” challenge and the high computation complexity. In this paper, we present our work towards building a high performance spatial query system for querying massive spatial data on MapReduce. Our framework takes an on demand index building approach for processing spatial queries and a partition-merge approach for building parallel spatial query pipelines, which fits nicely with the computing model of MapReduce. We demonstrate our framework on supporting multi-way spatial joins for algorithm evaluation and nearest neighbor queries for microanatomic objects. To reduce query response time, we propose cost based query optimization to mitigate the effect of data skew. Our experiments show that the framework can efficiently support complex analytical spatial queries on MapReduce. PMID:24501719

Noise analysis for near field 3-D FM-CW radar imaging systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sheen, David M.

2015-06-19

Near field radar imaging systems are used for several applications including concealed weapon detection in airports and other high-security venues. Despite the near-field operation, phase noise and thermal noise can limit the performance in several ways including reduction in system sensitivity and reduction of image dynamic range. In this paper, the effects of thermal noise, phase noise, and processing gain are analyzed in the context of a near field 3-D FM-CW imaging radar as might be used for concealed weapon detection. In addition to traditional frequency domain analysis, a time-domain simulation is employed to graphically demonstrate the effect of thesemore » noise sources on a fast-chirping FM-CW system.« less

High-Speed, High-Power Active Control Coils for HBT-EP

NASA Astrophysics Data System (ADS)

Debono, Bryan

2010-11-01

We report the performance of a newly installed high-speed, high-power active control system for the application of non-symmetric magnetic fields and the study of rotating MHD and resistive wall modes in the HBTEP tokamak. The new control system consists of an array of 120 modular control coils and 40 solid-state, high-power amplifiers that can apply non-symmetric control fields that are more than 10 times larger than previous studies in HBT-EP and exceed 5% of the equilibrium poloidal field strength. Measurements of the current and field response of the control system are presented as a function of frequency and control coil geometry, and these demonstrate the effectiveness of the system to interact with both growing RWM instabilities and long-wavelength modes rotating with the plasma. We describe a research plan to study the interaction of both kink and tearing mode fluctuations with applied static and rotating magnetic perturbations while systematically changing the plasma rotation with a biased molybdenum electrode inserted into the edge plasma.

Heterostructured semiconductor single-walled carbon nanotube films for solution-processed high-performance field-effect transistors

NASA Astrophysics Data System (ADS)

Park, Noh-Hwal; Lee, Seung-Hoon; Jeong, Seung-Hyeon; Khim, Dongyoon; Kim, Yun Ho; Yoo, Sungmi; Noh, Yong-Young; Kim, Jang-Joo

2018-03-01

In this paper, we report a simple and effective method to simultaneously achieve a high charge-carrier mobility and low off current in conjugated polymer-wrapped semiconducting single-walled carbon nanotube (s-SWNT) transistors by applying a SWNT bilayer. To achieve the high mobility and low off current, highly purified and less purified s-SWNTs are successively coated to form the semiconducting layer consisting of poly (3-dodecylthiophene-2,5-diyl) (P3DDT)-wrapped high-pressure carbon mono oxide (HiPCO) SWNT (P3DDT-HiPCO) and poly (9, 9-di-n-dodecylfluorene) (PFDD)-wrapped plasma discharge (PD) SWNT (PFDD-PD). The SWNT transistors with bilayer SWNT networked film showed highly improved hole field-effect mobility (6.18 ± 0.85 cm2V-1s-1 average), on/off current ratio (107), and off current (˜1 pA). Thus, the combination of less purified PFDD-PD (98%-99%) charge-injection layer and highly purified s-P3DDT-HiPCO (>99%) charge-transport layer as the bi-layered semiconducting film achieved high mobility and low off current simultaneously.

Gradient-Type Magnetoelectric Current Sensor with Strong Multisource Noise Suppression.

PubMed

Zhang, Mingji; Or, Siu Wing

2018-02-14

A novel gradient-type magnetoelectric (ME) current sensor operating in magnetic field gradient (MFG) detection and conversion mode is developed based on a pair of ME composites that have a back-to-back capacitor configuration under a baseline separation and a magnetic biasing in an electrically-shielded and mechanically-enclosed housing. The physics behind the current sensing process is the product effect of the current-induced MFG effect associated with vortex magnetic fields of current-carrying cables (i.e., MFG detection) and the MFG-induced ME effect in the ME composite pair (i.e., MFG conversion). The sensor output voltage is directly obtained from the gradient ME voltage of the ME composite pair and is calibrated against cable current to give the current sensitivity. The current sensing performance of the sensor is evaluated, both theoretically and experimentally, under multisource noises of electric fields, magnetic fields, vibrations, and thermals. The sensor combines the merits of small nonlinearity in the current-induced MFG effect with those of high sensitivity and high common-mode noise rejection rate in the MFG-induced ME effect to achieve a high current sensitivity of 0.65-12.55 mV/A in the frequency range of 10 Hz-170 kHz, a small input-output nonlinearity of <500 ppm, a small thermal drift of <0.2%/℃ in the current range of 0-20 A, and a high common-mode noise rejection rate of 17-28 dB from multisource noises.

Gradient-Type Magnetoelectric Current Sensor with Strong Multisource Noise Suppression

PubMed Central

2018-01-01

A novel gradient-type magnetoelectric (ME) current sensor operating in magnetic field gradient (MFG) detection and conversion mode is developed based on a pair of ME composites that have a back-to-back capacitor configuration under a baseline separation and a magnetic biasing in an electrically-shielded and mechanically-enclosed housing. The physics behind the current sensing process is the product effect of the current-induced MFG effect associated with vortex magnetic fields of current-carrying cables (i.e., MFG detection) and the MFG-induced ME effect in the ME composite pair (i.e., MFG conversion). The sensor output voltage is directly obtained from the gradient ME voltage of the ME composite pair and is calibrated against cable current to give the current sensitivity. The current sensing performance of the sensor is evaluated, both theoretically and experimentally, under multisource noises of electric fields, magnetic fields, vibrations, and thermals. The sensor combines the merits of small nonlinearity in the current-induced MFG effect with those of high sensitivity and high common-mode noise rejection rate in the MFG-induced ME effect to achieve a high current sensitivity of 0.65–12.55 mV/A in the frequency range of 10 Hz–170 kHz, a small input-output nonlinearity of <500 ppm, a small thermal drift of <0.2%/℃ in the current range of 0–20 A, and a high common-mode noise rejection rate of 17–28 dB from multisource noises. PMID:29443920

R1 dispersion contrast at high field with fast field-cycling MRI

NASA Astrophysics Data System (ADS)

Bödenler, Markus; Basini, Martina; Casula, Maria Francesca; Umut, Evrim; Gösweiner, Christian; Petrovic, Andreas; Kruk, Danuta; Scharfetter, Hermann

2018-05-01

Contrast agents with a strong R1 dispersion have been shown to be effective in generating target-specific contrast in MRI. The utilization of this R1 field dependence requires the adaptation of an MRI scanner for fast field-cycling (FFC). Here, we present the first implementation and validation of FFC-MRI at a clinical field strength of 3 T. A field-cycling range of ±100 mT around the nominal B0 field was realized by inserting an additional insert coil into an otherwise conventional MRI system. System validation was successfully performed with selected iron oxide magnetic nanoparticles and comparison to FFC-NMR relaxometry measurements. Furthermore, we show proof-of-principle R1 dispersion imaging and demonstrate the capability of generating R1 dispersion contrast at high field with suppressed background signal. With the presented ready-to-use hardware setup it is possible to investigate MRI contrast agents with a strong R1 dispersion at a field strength of 3 T.

A 30 mK, 13.5 T scanning tunneling microscope with two independent tips.

PubMed

Roychowdhury, Anita; Gubrud, M A; Dana, R; Anderson, J R; Lobb, C J; Wellstood, F C; Dreyer, M

2014-04-01

We describe the design, construction, and performance of an ultra-low temperature, high-field scanning tunneling microscope (STM) with two independent tips. The STM is mounted on a dilution refrigerator and operates at a base temperature of 30 mK with magnetic fields of up to 13.5 T. We focus on the design of the two-tip STM head, as well as the sample transfer mechanism, which allows in situ transfer from an ultra high vacuum preparation chamber while the STM is at 1.5 K. Other design details such as the vibration isolation and rf-filtered wiring are also described. Their effectiveness is demonstrated via spectral current noise characteristics and the root mean square roughness of atomic resolution images. The high-field capability is shown by the magnetic field dependence of the superconducting gap of CuxBi2Se3. Finally, we present images and spectroscopy taken with superconducting Nb tips with the refrigerator at 35 mK that indicate that the effective temperature of our tips/sample is approximately 184 mK, corresponding to an energy resolution of 16 μeV.

Numerical analysis of band tails in nanowires and their effects on the performance of tunneling field-effect transistors

NASA Astrophysics Data System (ADS)

Tanaka, Takahisa; Uchida, Ken

2018-06-01

Band tails in heavily doped semiconductors are one of the important parameters that determine transfer characteristics of tunneling field-effect transistors. In this study, doping concentration and doing profile dependences of band tails in heavily doped Si nanowires were analyzed by a nonequilibrium Green function method. From the calculated band tails, transfer characteristics of nanowire tunnel field-effect transistors were numerically analyzed by Wentzel–Kramer–Brillouin approximation with exponential barriers. The calculated transfer characteristics demonstrate that the band tails induced by dopants degrade the subthreshold slopes of Si nanowires from 5 to 56 mV/dec in the worst case. On the other hand, surface doping leads to a high drain current while maintaining a small subthreshold slope.

Multipositional silica-coated silver nanoparticles for high-performance polymer solar cells.

PubMed

Choi, Hyosung; Lee, Jung-Pil; Ko, Seo-Jin; Jung, Jae-Woo; Park, Hyungmin; Yoo, Seungmin; Park, Okji; Jeong, Jong-Ryul; Park, Soojin; Kim, Jin Young

2013-05-08

We demonstrate high-performance polymer solar cells using the plasmonic effect of multipositional silica-coated silver nanoparticles. The location of the nanoparticles is critical for increasing light absorption and scattering via enhanced electric field distribution. The device incorporating nanoparticles between the hole transport layer and the active layer achieves a power conversion efficiency of 8.92% with an external quantum efficiency of 81.5%. These device efficiencies are the highest values reported to date for plasmonic polymer solar cells using metal nanoparticles.

Micro-patterned ZnO semiconductors for high performance thin film transistors via chemical imprinting with a PDMS stamp.

PubMed

Seong, Kieun; Kim, Kyongjun; Park, Si Yun; Kim, Youn Sang

2013-04-07

Chemical imprinting was conducted on ZnO semiconductor films via a chemical reaction at the contact regions between a micro-patterned PDMS stamp and ZnO films. In addition, we applied the chemical imprinting on Li doped ZnO thin films for high performance TFTs fabrication. The representative micro-patterned Li doped ZnO TFTs showed a field effect mobility of 4.2 cm(2) V(-1) s(-1) after sintering at 300 °C.

Accessible magnetic resonance imaging.

PubMed

Kaufman, L; Arakawa, M; Hale, J; Rothschild, P; Carlson, J; Hake, K; Kramer, D; Lu, W; Van Heteren, J

1989-10-01

The cost of magnetic resonance imaging (MRI) is driven by magnetic field strength. Misperceptions as to the impact of field strength on performance have led to systems that are more expensive than they need to be. Careful analysis of all the factors that affect diagnostic quality lead to the conclusion that field strength per se is not a strong determinant of system performance. Freed from the constraints imposed by high-field operation, it is possible to exploit a varied set of opportunities afforded by low-field operation. In addition to lower costs and easier siting, we can take advantage of shortened T1 times, higher contrast, reduced sensitivity to motion, and reduced radiofrequency power deposition. These conceptual advantages can be made to coalesce onto practical imaging systems. We describe a low-cost MRI system that utilizes a permanent magnet of open design. Careful optimization of receiving antennas and acquisition sequences permit performance levels consistent with those needed for an effective diagnostic unit. Ancillary advantages include easy access to the patient, reduced claustrophobia, quiet and comfortable operation, and absence of a missile effect. The system can be sited in 350 sq ft and consumes a modest amount of electricity. MRI equipment of this kind can widen the population base than can access this powerful and beneficial diagnostic modality.

Phase-locked loop based on nanoelectromechanical resonant-body field effect transistor

NASA Astrophysics Data System (ADS)

Bartsch, S. T.; Rusu, A.; Ionescu, A. M.

2012-10-01

We demonstrate the room-temperature operation of a silicon nanoelectromechanical resonant-body field effect transistor (RB-FET) embedded into phase-locked loop (PLL). The very-high frequency resonator uses on-chip electrostatic actuation and transistor-based displacement detection. The heterodyne frequency down-conversion based on resistive FET mixing provides a loop feedback signal with high signal-to-noise ratio. We identify key parameters for PLL operation, and analyze the performance of the RB-FET at the system level. Used as resonant mass detector, the experimental frequency stability in the ppm-range translates into sub atto-gram (10-18 g) sensitivity in high vacuum. The feedback and control system are generic and may be extended to other mechanical resonators with transistor properties, such as graphene membranes and carbon nanotubes.

Effect of nursery storage and site preparation techniques on field performance of high-elevation Pinus contorta seedlings

Treesearch

Deborah S. Page-Dumroese; R. Kasten Dumroese; Martin F. Jurgensen; Ann Abbott; Jennifer J. Henseik

2008-01-01

After five years of growth at high-elevations (~3000 m) in Utah, container lodgepole pine (Pinus contorta Dougl. var. latifolia Engelm.) seedlings survived well (80-95%) and grew to similar heights regardless of nursery storage method and site preparation technique. Seedlings received one of three storage treatments: (1) spring-...

Strong flux pinning at 4.2 K in SmBa2Cu3O y coated conductors with BaHfO3 nanorods controlled by low growth temperature

NASA Astrophysics Data System (ADS)

Miura, S.; Tsuchiya, Y.; Yoshida, Y.; Ichino, Y.; Awaji, S.; Matsumoto, K.; Ibi, A.; Izumi, T.

2017-08-01

In order to apply REBa2Cu3O y (REBCO, RE = rare earth elements or Y) coated conductors in high magnetic field, coil-based applications, the isotropic improvement of their critical current performance with respect to the directions of the magnetic field under these operating conditions is required. Most applications operate at temperatures lower than 50 K and magnetic fields over 2 T. In this study, the improvement of critical current density (J c) performance for various applied magnetic field directions was achieved by controlling the nanostructure of the BaHfO3 (BHO)-doped SmBa2Cu3O y (SmBCO) films on metallic substrates. The corresponding minimum J c value of the films at 40 K under an applied 3 T field was 5.2 MA cm-2, which is over ten times higher than that of a fully optimized Nb-Ti wire at 4.2 K. At 4.2 K, under a 17.5 T field, a flux pinning force density of 1.4 TN m-3 for B//c was realized; this value is among the highest values reported for REBCO films to date. More importantly, the F p for B//c corresponds to the minimum value for various applied magnetic field directions. We investigated the dominant flux pinning centers of films at 4.2 K using the anisotropic scaling approach based on the effective mass model. The dominant flux pinning centers are random pinning centers at 4.2 K, i.e., a high pinning performance was achieved by the high number density of random pins in the matrix of the BHO-doped SmBCO films.

Effect of the presence of oil on foam performance; A field simulation study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Law, D.H.S.; Yang, Z.M.; Stone, T.W.

1992-05-01

This paper describes a field-scale sensitivity study of the effect of the presence of oil on foam performance in a steam-foam-drive process. The 2D field-scale simulation was based on a field pilot in the Karamay formation in Zin-Jiang, China. Numerical results showed that the detrimental effect of oil on the foam performance in field operations is significant. The success of a steam-foam process depended mainly on the ability of the foam to divert steam from the depleted zone.

High-Performance, Radiation-Hardened Electronics for Space Environments

NASA Technical Reports Server (NTRS)

Keys, Andrew S.; Watson, Michael D.; Frazier, Donald O.; Adams, James H.; Johnson, Michael A.; Kolawa, Elizabeth A.

2007-01-01

The Radiation Hardened Electronics for Space Environments (RHESE) project endeavors to advance the current state-of-the-art in high-performance, radiation-hardened electronics and processors, ensuring successful performance of space systems required to operate within extreme radiation and temperature environments. Because RHESE is a project within the Exploration Technology Development Program (ETDP), RHESE's primary customers will be the human and robotic missions being developed by NASA's Exploration Systems Mission Directorate (ESMD) in partial fulfillment of the Vision for Space Exploration. Benefits are also anticipated for NASA's science missions to planetary and deep-space destinations. As a technology development effort, RHESE provides a broad-scoped, full spectrum of approaches to environmentally harden space electronics, including new materials, advanced design processes, reconfigurable hardware techniques, and software modeling of the radiation environment. The RHESE sub-project tasks are: SelfReconfigurable Electronics for Extreme Environments, Radiation Effects Predictive Modeling, Radiation Hardened Memory, Single Event Effects (SEE) Immune Reconfigurable Field Programmable Gate Array (FPGA) (SIRF), Radiation Hardening by Software, Radiation Hardened High Performance Processors (HPP), Reconfigurable Computing, Low Temperature Tolerant MEMS by Design, and Silicon-Germanium (SiGe) Integrated Electronics for Extreme Environments. These nine sub-project tasks are managed by technical leads as located across five different NASA field centers, including Ames Research Center, Goddard Space Flight Center, the Jet Propulsion Laboratory, Langley Research Center, and Marshall Space Flight Center. The overall RHESE integrated project management responsibility resides with NASA's Marshall Space Flight Center (MSFC). Initial technology development emphasis within RHESE focuses on the hardening of Field Programmable Gate Arrays (FPGA)s and Field Programmable Analog Arrays (FPAA)s for use in reconfigurable architectures. As these component/chip level technologies mature, the RHESE project emphasis shifts to focus on efforts encompassing total processor hardening techniques and board-level electronic reconfiguration techniques featuring spare and interface modularity. This phased approach to distributing emphasis between technology developments provides hardened FPGA/FPAAs for early mission infusion, then migrates to hardened, board-level, high speed processors with associated memory elements and high density storage for the longer duration missions encountered for Lunar Outpost and Mars Exploration occurring later in the Constellation schedule.

Short-Channel Tunneling Field-Effect Transistor with Drain-Overlap and Dual-Metal Gate Structure for Low-Power and High-Speed Operations.

PubMed

Yoon, Young Jun; Eun, Hye Rim; Seo, Jae Hwa; Kang, Hee-Sung; Lee, Seong Min; Lee, Jeongmin; Cho, Seongjae; Tae, Heung-Sik; Lee, Jung-Hee; Kang, In Man

2015-10-01

We have investigated and proposed a highly scaled tunneling field-effect transistor (TFET) based on Ge/GaAs heterojunction with a drain overlap to suppress drain-induced barrier thinning (DIBT) and improve low-power (LP) performance. The highly scaled TFET with a drain overlap achieves lower leakage tunneling current because of the decrease in tunneling events between the source and drain, whereas a typical short-channel TFET suffers from a great deal of tunneling leakage current due to the DIBT at the off-state. However, the drain overlap inevitably increases the gate-to-drain capacitance (Cgd) because of the increase in the overlap capacitance (Cov) and inversion capacitance (Cinv). Thus, in this work, a dual-metal gate structure is additionally applied along with the drain overlap. The current performance and the total gate capacitance (Cgg) of the device with a dual-metal gate can be possibly controlled by adjusting the metal gate workfunction (φgate) and φoverlap-gate in the overlapping regions. As a result, the intrinsic delay time (τ) is greatly reduced by obtaining lower Cgg divided by the on-state current (Ion), i.e., Cgg/Ion. We have successfully demonstrated excellent LP and high-speed performance of a highly scaled TFET by adopting both drain overlap and dual-metal gate with DIBT minimization.

High-performance PbS quantum dot vertical field-effect phototransistor using graphene as a transparent electrode

NASA Astrophysics Data System (ADS)

Che, Yongli; Zhang, Yating; Cao, Xiaolong; Song, Xiaoxian; Zhang, Haiting; Cao, Mingxuan; Dai, Haitao; Yang, Junbo; Zhang, Guizhong; Yao, Jianquan

2016-12-01

Solution processed photoactive PbS quantum dots (QDs) were used as channel in high-performance near-infrared vertical field-effect phototransistor (VFEpT) where monolayer graphene embedded as transparent electrode. In this vertical architecture, the PbS QD channel was sandwiched and naturally protected between the drain and source electrodes, which made the device ultrashort channel length (110 nm) simply the thickness of the channel layer. The VFEpT exhibited ambipolar operation with high mobilities of μe = 3.5 cm2/V s in n-channel operation and μh = 3.3 cm2/V s in p-channel operation at low operation voltages. By using the photoactive PbS QDs as channel material, the VFEpT exhibited good photoresponse properties with a responsivity of 4.2 × 102 A/W, an external quantum efficiency of 6.4 × 104% and a photodetectivity of 2.1 × 109 Jones at the light irradiance of 36 mW/cm2. Additionally, the VFEpT showed excellent on/off switching with good stability and reproducibility and fast response speed with a short rise time of 12 ms in n-channel operation and 10.6 ms in p-channel operation. These high mobilities, good photoresponse properties and simplistic fabrication of our VFEpTs provided a facile route to the high-performance inorganic photodetectors.

High Accuracy Passive Magnetic Field-Based Localization for Feedback Control Using Principal Component Analysis.

PubMed

Foong, Shaohui; Sun, Zhenglong

2016-08-12

In this paper, a novel magnetic field-based sensing system employing statistically optimized concurrent multiple sensor outputs for precise field-position association and localization is presented. This method capitalizes on the independence between simultaneous spatial field measurements at multiple locations to induce unique correspondences between field and position. This single-source-multi-sensor configuration is able to achieve accurate and precise localization and tracking of translational motion without contact over large travel distances for feedback control. Principal component analysis (PCA) is used as a pseudo-linear filter to optimally reduce the dimensions of the multi-sensor output space for computationally efficient field-position mapping with artificial neural networks (ANNs). Numerical simulations are employed to investigate the effects of geometric parameters and Gaussian noise corruption on PCA assisted ANN mapping performance. Using a 9-sensor network, the sensing accuracy and closed-loop tracking performance of the proposed optimal field-based sensing system is experimentally evaluated on a linear actuator with a significantly more expensive optical encoder as a comparison.

Experiments on the flow field physics of confluent boundary layers for high-lift systems

NASA Technical Reports Server (NTRS)

Nelson, Robert C.; Thomas, F. O.; Chu, H. C.

1994-01-01

The use of sub-scale wind tunnel test data to predict the behavior of commercial transport high lift systems at in-flight Reynolds number is limited by the so-called 'inverse Reynolds number effect'. This involves an actual deterioration in the performance of a high lift device with increasing Reynolds number. A lack of understanding of the relevant flow field physics associated with numerous complicated viscous flow interactions that characterize flow over high-lift devices prohibits computational fluid dynamics from addressing Reynolds number effects. Clearly there is a need for research that has as its objective the clarification of the fundamental flow field physics associated with viscous effects in high lift systems. In this investigation, a detailed experimental investigation is being performed to study the interaction between the slat wake and the boundary layer on the primary airfoil which is known as a confluent boundary layer. This little-studied aspect of the multi-element airfoil problem deserves special attention due to its importance in the lift augmentation process. The goal of this research is is to provide an improved understanding of the flow physics associated with high lift generation. This process report will discuss the status of the research being conducted at the Hessert Center for Aerospace Research at the University of Notre Dame. The research is sponsored by NASA Ames Research Center under NASA grant NAG2-905. The report will include a discussion of the models that have been built or that are under construction, a description of the planned experiments, a description of a flow visualization apparatus that has been developed for generating colored smoke for confluent boundary layer studies and some preliminary measurements made using our new 3-component fiber optic LDV system.

High-speed optical three-axis vector magnetometry based on nonlinear Hanle effect in rubidium vapor

NASA Astrophysics Data System (ADS)

Azizbekyan, Hrayr; Shmavonyan, Svetlana; Khanbekyan, Aleksandr; Movsisyan, Marina; Papoyan, Aram

2017-07-01

The magnetic-field-compensation optical vector magnetometer based on the nonlinear Hanle effect in alkali metal vapor allowing two-axis measurement operation has been further elaborated for three-axis performance, along with significant reduction of measurement time. The upgrade was achieved by implementing a two-beam resonant excitation configuration and a fast maximum searching algorithm. Results of the proof-of-concept experiments, demonstrating 1 μT B-field resolution, are presented. The applied interest and capability of the proposed technique is analyzed.

High mobility La-doped BaSnO3 on non-perovskite MgO substrate

NASA Astrophysics Data System (ADS)

Kim, Youjung; Shin, Juyeon; Kim, Young Mo; Char, Kookrin

(Ba,La)SnO3 is a transparent perovskite oxide with high electron mobility and excellent oxygen stability. Field effect device with (Ba,La)SnO3 channel was reported to show good output characteristics on STO substrate. Here, we fabricated (Ba,La)SnO3\\ films and field effect devices with (Ba,La)SnO3 channel on non-perovskite MgO substrates, which are available in large size wafers. X-ray diffraction and transmission electron microscope (TEM) images of (Ba,La)SnO3\\ films on MgO substrates show that the films are epitaxial with many threading dislocations. (Ba,La)SnO3 exhibits the high mobility with 97.2 cm2/Vs at 2 % La doping on top of 150 nm thick BaSnO3 buffer layer. Excellent carrier modulation was observed in field effect devices. FET performances on MgO substrates are slightly better than those on SrTiO3 substrates in spite of the higher dislocation density on MgO than on SrTiO3 substrates. These high mobility BaSnO3 thin films and transistors on MgO substrates will accelerate development for applications in high temperature and high power electronics. Samsung Science and Technology Foundation.

Fabrication and viscoelastic characteristics of waste tire rubber based magnetorheological elastomer

NASA Astrophysics Data System (ADS)

Ubaidillah; Choi, H. J.; Mazlan, S. A.; Imaduddin, F.; Harjana

2016-11-01

In this study, waste tire rubber (WTR) was successfully converted into magnetorheological (MR) elastomer via high-pressure and high-temperature reclamation. The physical and rheological properties of WTR based MR elastomers were assessed for performance. The revulcanization process was at the absence of magnetic fields. Thus, the magnetizable particles were allowed to distribute randomly. To confirm the particle dispersion in the MR elastomer matrix, an observation by scanning electron microscopy was used. The magnetization saturation and other magnetic properties were obtained through vibrating sample magnetometer. Rheological properties including MR effect were examined under oscillatory loadings in the absence and presence of magnetic fields using rotational rheometer. The WTR based MR elastomer exhibited tunable intrinsic properties under presentation of magnetic fields. The storage and loss modulus, along with the loss factor, changed with increases in frequency and during magnetization. Interestingly, a Payne effect phenomenon was seen in all samples during dynamic swept strain testing. The Payne effect was significantly increased with incremental increases in the magnetic field. This phenomenon was interpreted as the process of formation-destruction-reformation undergone by the internal network chains in the MR elastomers.

Cyclopentadithiophene-Benzothiadiazole Donor-Acceptor Polymers as Prototypical Semiconductors for High-Performance Field-Effect Transistors.

PubMed

Li, Mengmeng; An, Cunbin; Pisula, Wojciech; Müllen, Klaus

2018-05-15

Donor-acceptor (D-A) conjugated polymers are of great interest as organic semiconductors, because they offer a rational tailoring of the electronic properties by modification of the donor and acceptor units. Nowadays, D-A polymers exhibit field-effect mobilities on the order of 10 -2 -10 0 cm 2 V -1 s -1 , while several examples showed a mobility over 10 cm 2 V -1 s -1 . The development of cyclopentadithiophene-benzothiadiazole (CDT-BTZ) copolymers one decade ago represents an important step toward high-performance organic semiconductors for field-effect transistors. The significant rise in field-effect mobility of CDT-BTZ in comparison to the existing D-A polymers at that time opened the door to a new research field with a large number of novel D-A systems. From this point, the device performance of CDT-BTZ was gradually improved by a systematic optimization of the synthesis and polymer structure as well as by an efficient solution processing into long-range ordered thin films. The key aspect was a comprehensive understanding of the relation between polymer structure and solid-state organization. Due to their fundamental role for the field of D-A polymers in general, this Account will for the first time explicitly focus on prototypical CDT-BTZ polymers, while other reviews provide an excellent general overview on D-A polymers. The first part of this Account discusses strategies for improving the charge carrier transport, focusing on chemical aspects. Improved synthesis as an essential stage toward high purity, and high molecular weight is a prerequisite for molecular order. The modification of substituents is a further crucial feature to tune the CDT-BTZ packing and self-assembly. Linear alkyl side chains facilitate intermolecular π-stacking interactions, while branched ones increase solubility and alter the polymer packing. Additional control over the supramolecular organization of CDT-BTZ polymers is introduced by alkenyl substituents via their cis-trans isomerization. The last discussed chemical concept is based on heteroatom variation within the CDT unit. The relationships found experimentally for CDT-BTZ between polymer chemical structure, solid-state organization, and charge carrier transport are explained by means of theoretical simulations. Besides the effects of molecular design, the second part of this Account discusses the processing conditions from solution. The film microstructure, defined as a mesoscopic domain organization, is critically affected by solution processing. Suitable processing techniques allow the formation of a long-range order and a uniaxial orientation of the CDT-BTZ chains, thus lowering the trapping density of grain boundaries for charge carriers. For instance, alignment of the CDT-BTZ polymer by dip-coating yields films with a pronounced structural and electrical anisotropy and favors a fast migration of charge carriers along the conjugated backbones in the deposition direction. By using film compression with the assistance of an ionic liquid, one even obtains CDT-BTZ films with a band-like transport and a transistor hole mobility of 10 cm 2 V -1 s -1 . This device performance is attributed to large domains in the compressed films being formed by CDT-BTZ with longer alkyl chains, which establish a fine balance between polymer interactions and growth kinetics during solvent evaporation. On the basis of the prototypical semiconductor CDT-BTZ, this Account provides general guidelines for achieving high-performance polymer transistors by taking into account the subtle balance of synthetic protocol, molecular design, and processing.

The Exomet Project: EU/ESA Research on High-Performance Light-Metal Alloys and Nanocomposites

NASA Astrophysics Data System (ADS)

Sillekens, W. H.

The performance of structural materials is commonly associated with such design parameters as strength and stiffness relative to their density; a recognized means to further enhance the weight-saving potential of low-density materials is thus to improve on their mechanical attributes. The European Community research project ExoMet that started in mid-2012 targets such high-performance aluminum- and magnesium-based materials by exploring novel grain-refining and nanoparticle additions in conjunction with melt treatment by means of external fields (electromagnetic, ultrasonic, mechanical). These external fields are to provide for an effective and efficient dispersion of the additions in the melt and their uniform distribution in the as-cast material. The consortium of 27 companies, universities and research organizations from eleven countries integrates various scientific and technological disciplines as well as application areas — including automotive and (aero)-space.

TiO2 Nanotube Arrays: Fabricated by Soft-Hard Template and the Grain Size Dependence of Field Emission Performance

NASA Astrophysics Data System (ADS)

Yang, Xuxin; Ma, Pei; Qi, Hui; Zhao, Jingxin; Wu, Qiang; You, Jichun; Li, Yongjin

2017-11-01

Highly ordered TiO2 nanotube (TNT) arrays were successfully synthesized by the combination of soft and hard templates. In the fabrication of them, anodic aluminum oxide membranes act as the hard template while the self-assembly of polystyrene-block-poly(ethylene oxide) (PS-b-PEO) complexed with titanium-tetraisopropoxide (TTIP, the precursor of TiO2) provides the soft template to control the grain size of TiO2 nanotubes. Our results indicate that the field emission (FE) performance depends crucially on the grain size of the calcinated TiO2 which is dominated by the PS-b-PEO and its blending ratio with TTIP. The optimized sample (with the TTIP/PEO ratio of 3.87) exhibits excellent FE performances involving both a low turn-on field of 3.3 V/um and a high current density of 7.6 mA/cm2 at 12.7 V/μm. The enhanced FE properties can be attributed to the low effective work function (1.2 eV) resulted from the smaller grain size of TiO2.

Transport studies in polymer electrolyte fuel cell with porous metallic flow field at ultra high current density

NASA Astrophysics Data System (ADS)

Srouji, Abdul-Kader

Achieving cost reduction for polymer electrolyte fuel cells (PEFC) requires a simultaneous effort in increasing power density while reducing precious metal loading. In PEFCs, the cathode performance is often limiting due to both the slow oxygen reduction reaction (ORR), and mass transport limitation caused by limited oxygen diffusion and liquid water flooding at high current density. This study is motivated by the achievement of ultra-high current density through the elimination of the channel/land (C/L) paradigm in PEFC flow field design. An open metallic element (OME) flow field capable of operating at unprecedented ultra-high current density (3 A/cm2) introduces new advantages and limitations for PEFC operation. The first part of this study compares the OME with a conventional C/L flow field, through performance and electrochemical diagnostic tools such as electrochemical impedance spectroscopy (EIS). The results indicate the uniqueness of the OME's mass transport improvement. No sign of operation limitation due to flooding is noted. The second part specifically examines water management at high current density using the OME flow field. A unique experimental setup is developed to measure steady-state and transient net water drag across the membrane, in order to characterize the fundamental aspects of water transport at high current density with the OME. Instead of flooding, the new limitation is identified to be anode side dry-out of the membrane, caused by electroosmotic drag. The OME improves water removal from the cathode, which immediately improves oxygen transport and performance. However, the low water content in the cathode reduces back diffusion of water to the membrane, and electroosmotic drag dominates at high current density, leading to dry-out. The third part employs the OME flow field as a tool that avoids C/L effects endemic to a typical flow field, in order to study oxygen transport resistance at the catalyst layer of a PEFC. In open literature, a resistance of unknown origin, was shown to directly or indirectly scale with Pt loading. A lack of understanding of the mechanism responsible for such resistance is noted, and several possible theories have been proposed. This lack of fundamental understanding of the origins of this resistance adds complexity to computational models which are designed to capture performance behavior with ultra-low loading electrodes. By employing the OME flow field as a tool to study this phenomena, the origins of the transport resistance appearing at ultra-low Platinum (Pt) loading is proposed to be an increase in oxygen dilution resistance through water film.

Modeling of Diamond Field-Emitter-Arrays for high brightness photocathode applications

NASA Astrophysics Data System (ADS)

Kwan, Thomas; Huang, Chengkun; Piryatinski, Andrei; Lewellen, John; Nichols, Kimberly; Choi, Bo; Pavlenko, Vitaly; Shchegolkov, Dmitry; Nguyen, Dinh; Andrews, Heather; Simakov, Evgenya

2017-10-01

We propose to employ Diamond Field-Emitter-Arrays (DFEAs) as high-current-density ultra-low-emittance photocathodes for compact laser-driven dielectric accelerators capable of generating ultra-high brightness electron beams for advanced applications. We develop a semi-classical Monte-Carlo photoemission model for DFEAs that includes carriers' transport to the emitter surface and tunneling through the surface under external fields. The model accounts for the electronic structure size quantization affecting the transport and tunneling process within the sharp diamond tips. We compare this first principle model with other field emission models, such as the Child-Langmuir and Murphy-Good models. By further including effects of carrier photoexcitation, we perform simulations of the DFEAs' photoemission quantum yield and the emitted electron beam. Details of the theoretical model and validation against preliminary experimental data will be presented. Work ssupported by LDRD program at LANL.

A feasibility study of a hypersonic real-gas facility

NASA Technical Reports Server (NTRS)

Gully, J. H.; Driga, M. D.; Weldon, W. F.

1987-01-01

A four month feasibility study of a hypersonic real-gas free flight test facility for NASA Langley Research Center (LARC) was performed. The feasibility of using a high-energy electromagnetic launcher (EML) to accelerate complex models (lifting and nonlifting) in the hypersonic, real-gas facility was examined. Issues addressed include: design and performance of the accelerator; design and performance of the power supply; design and operation of the sabot and payload during acceleration and separation; effects of high current, magnetic fields, temperature, and stress on the sabot and payload; and survivability of payload instrumentation during acceleration, flight, and soft catch.

Studies of $${\\rm Nb}_{3}{\\rm Sn}$$ Strands Based on the Restacked-Rod Process for High Field Accelerator Magnets

DOE PAGES

Barzi, E.; Bossert, M.; Gallo, G.; ...

2011-12-21

A major thrust in Fermilab's accelerator magnet R&D program is the development of Nb 3Sn wires which meet target requirements for high field magnets, such as high critical current density, low effective filament size, and the capability to withstand the cabling process. The performance of a number of strands with 150/169 restack design produced by Oxford Superconducting Technology was studied for round and deformed wires. To optimize the maximum plastic strain, finite element modeling was also used as an aid in the design. Results of mechanical, transport and metallographic analyses are presented for round and deformed wires.

Longleaf Pine Seed Presowing Treatements: Effects on Germination and Nursery Establishment

Treesearch

James P. Barnett; Bill Pickens; Robert Karrfalt

1999-01-01

Longleaf pine (Pinus patustris Mill.) seeds are sensitive to damage during collection, processing, and storage. High-quality seeds are essential for successful production of nursery crops that meet management goals and perform well in the field. A series of tests was conducted to evaluate the effect of a number of presowing treatments, e.g.,...

Magnetic field induced strong valley polarization in the three-dimensional topological semimetal LaBi

NASA Astrophysics Data System (ADS)

Kumar, Nitesh; Shekhar, Chandra; Klotz, J.; Wosnitza, J.; Felser, Claudia

2017-10-01

LaBi is a three-dimensional rocksalt-type material with a surprisingly quasi-two-dimensional electronic structure. It exhibits excellent electronic properties such as the existence of nontrivial Dirac cones, extremely large magnetoresistance, and high charge-carrier mobility. The cigar-shaped electron valleys make the charge transport highly anisotropic when the magnetic field is varied from one crystallographic axis to another. We show that the electrons can be polarized effectively in these electron valleys under a rotating magnetic field. We achieved a polarization of 60% at 2 K despite the coexistence of three-dimensional hole pockets. The valley polarization in LaBi is compared to the sister compound LaSb where it is found to be smaller. The performance of LaBi is comparable to the highly efficient bismuth.

Sensed presence and mystical experiences are predicted by suggestibility, not by the application of transcranial weak complex magnetic fields.

PubMed

Granqvist, Pehr; Fredrikson, Mats; Unge, Patrik; Hagenfeldt, Andrea; Valind, Sven; Larhammar, Dan; Larsson, Marcus

2005-04-29

Transcranial magnetic stimulation (TMS) with weak (micro Tesla) complex waveform fields have been claimed to evoke the sensed presence of a sentient being in up to 80% in the general population. These findings have had a questionable neurophysiological foundation as the fields are approximately six orders of magnitude weaker than ordinary TMS fields. Also, no independent replication has been reported. To replicate and extend previous findings, we performed a double-blind experiment (N=89), with a sham-field control group. Personality characteristics indicating suggestibility (absorption, signs of abnormal temporal lobe activity, and a "new age"-lifestyle orientation) were used as predictors. Sensed presence, mystical, and other somatosensory experiences previously reported from the magnetic field stimulation were outcome measures. We found no evidence for any effects of the magnetic fields, neither in the entire group, nor in individuals high in suggestibility. Because the personality characteristics significantly predicted outcomes, suggestibility may account for previously reported effects. Our results strongly question the earlier claims of experiential effects of weak magnetic fields.

Impedance computations and beam-based measurements: A problem of discrepancy

DOE PAGES

Smaluk, Victor

2018-04-21

High intensity of particle beams is crucial for high-performance operation of modern electron-positron storage rings, both colliders and light sources. The beam intensity is limited by the interaction of the beam with self-induced electromagnetic fields (wake fields) proportional to the vacuum chamber impedance. For a new accelerator project, the total broadband impedance is computed by element-wise wake-field simulations using computer codes. For a machine in operation, the impedance can be measured experimentally using beam-based techniques. In this article, a comparative analysis of impedance computations and beam-based measurements is presented for 15 electron-positron storage rings. The measured data and the predictionsmore » based on the computed impedance budgets show a significant discrepancy. For this article, three possible reasons for the discrepancy are discussed: interference of the wake fields excited by a beam in adjacent components of the vacuum chamber, effect of computation mesh size, and effect of insufficient bandwidth of the computed impedance.« less

Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spencer, B. F., E-mail: Ben.Spencer@manchester.ac.uk; Smith, W. F.; Hibberd, M. T.

2016-05-23

The effective mass, sheet carrier concentration, and mobility of electrons within a two-dimensional electron gas in an AlGaN/GaN heterostructure were determined using a laboratory-based terahertz cyclotron resonance spectrometer. The ability to perform terahertz cyclotron resonance spectroscopy with magnetic fields of up to 31 T was enabled by combining a high-field pulsed magnet with a modified asynchronous optical sampling terahertz detection scheme. This scheme allowed around 100 transmitted terahertz waveforms to be recorded over the 14 ms magnetic field pulse duration. The sheet density and mobility were measured to be 8.0 × 10{sup 12 }cm{sup −2} and 9000 cm{sup 2} V{sup −1} s{sup −1} at 77 K. The in-planemore » electron effective mass at the band edge was determined to be 0.228 ± 0.002m{sub 0}.« less

Impedance computations and beam-based measurements: A problem of discrepancy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smaluk, Victor

High intensity of particle beams is crucial for high-performance operation of modern electron-positron storage rings, both colliders and light sources. The beam intensity is limited by the interaction of the beam with self-induced electromagnetic fields (wake fields) proportional to the vacuum chamber impedance. For a new accelerator project, the total broadband impedance is computed by element-wise wake-field simulations using computer codes. For a machine in operation, the impedance can be measured experimentally using beam-based techniques. In this article, a comparative analysis of impedance computations and beam-based measurements is presented for 15 electron-positron storage rings. The measured data and the predictionsmore » based on the computed impedance budgets show a significant discrepancy. For this article, three possible reasons for the discrepancy are discussed: interference of the wake fields excited by a beam in adjacent components of the vacuum chamber, effect of computation mesh size, and effect of insufficient bandwidth of the computed impedance.« less

Exploratory studies of new avenues to achieve high electromechanical response and high dielectric constant in polymeric materials

NASA Astrophysics Data System (ADS)

Huang, Cheng

High performance soft electronic materials are key elements in advanced electronic devices for broad range applications including capacitors, actuators, artificial muscles and organs, smart materials and structures, microelectromechanical (MEMS) and microfluidic devices, acoustic devices and sensors. This thesis exploits new approaches to improve the electromechanical response and dielectric response of these materials. By making use of novel material phenomena such as large anisotropy in dipolar response in liquid crystals (LCs) and all-organic composites in which high dielectric constant organic solids and conductive polymers are either physically blended into or chemically grafted to a polymer matrix, we demonstrate that high dielectric constant and high electromechanical conversion efficiency comparable to that in ceramic materials can be achieved. Nano-composite approach can also be utilized to improve the performance of the electronic electroactive polymers (EAPs) and composites, for example, exchange coupling between the fillers and matrix with very large dielectric contrast can lead to significantly enhance the dielectric response as well as electromechanical response when the heterogeneity size of the composite is comparable to the exchange length. In addition to the dielectric composites, in which high dielectric constant fillers raise the dielectric constant of composites, conductive percolation can also lead to high dielectric constant in polymeric materials. An all-polymer percolative composite is introduced which exhibits very high dielectric constant (>7,000). The flexible all-polymer composites with a high dielectric constant make it possible to induce a high electromechanical response under a much reduced electric field in the field effect electroactive polymer (EAP) actuators (a strain of 2.65% with an elastic energy density of 0.18 J/cm3 can be achieved under a field of 16 V/mum). Agglomeration of the particles can also be effectively prevented by in situ preparation. High dielectric constant copper phthalocyanine oligomer and conductive polyaniline oligomer were successfully bonded to polyurethane backbone to form fully functionalized nano-phase polymers. Improvement of dispersibility of oligomers in polymer matrix makes the system self-organize the nanocomposites possessing oligomer nanophase (below 30nm) within the fully functionalized polymers. The resulting nanophase polymers significantly enhance the interface effect, which through the exchange coupling raises the dielectric response markedly above that expected from simple mixing rules for dielectric composites. Consequently, these nano-phase polymers offer a high dielectric constant (a dielectric constant near 1,000 at 20 Hz), improve the breakdown field and mechanical properties, and exhibit high electromechanical response. A longitudinal strain of more than -14% can be induced under a much reduced field, 23 V/mum, with an elastic energy density of higher than 1 J/cm3. The elastic modulus is as high as 100MPa, and a transverse strain is 7% under the same field. (Abstract shortened by UMI.)

Noise analysis for near-field 3D FM-CW radar imaging systems

NASA Astrophysics Data System (ADS)

Sheen, David M.

2015-05-01

Near field radar imaging systems are used for demanding security applications including concealed weapon detection in airports and other high-security venues. Despite the near-field operation, phase noise and thermal noise can limit performance in several ways. Practical imaging systems can employ arrays with low gain antennas and relatively large signal distribution networks that have substantial losses which limit transmit power and increase the effective noise figure of the receiver chain, resulting in substantial thermal noise. Phase noise can also limit system performance. The signal coupled from transmitter to receiver is much larger than expected target signals. Phase noise from this coupled signal can set the system noise floor if the oscillator is too noisy. Frequency modulated continuous wave (FM-CW) radar transceivers used in short range systems are relatively immune to the effects of the coupled phase noise due to range correlation effects. This effect can reduce the phase-noise floor such that it is below the thermal noise floor for moderate performance oscillators. Phase noise is also manifested in the range response around bright targets, and can cause smaller targets to be obscured. Noise in synthetic aperture imaging systems is mitigated by the processing gain of the system. In this paper, the effects of thermal noise, phase noise, and processing gain are analyzed in the context of a near field 3-D FM-CW imaging radar as might be used for concealed weapon detection. In addition to traditional frequency domain analysis, a time-domain simulation is employed to graphically demonstrate the effect of these noise sources on a fast-chirping FM-CW system.

Diketopyrrolopyrrole Polymers with Thienyl and Thiazolyl Linkers for Application in Field-Effect Transistors and Polymer Solar Cells.

PubMed

Yu, Yaping; Wu, Yang; Zhang, Andong; Li, Cheng; Tang, Zheng; Ma, Wei; Wu, Yonggang; Li, Weiwei

2016-11-09

Conjugated polymers consisting of diketopyrrolopyrrole (DPP) units have been successfully applied in field-effect transistors (FETs) and polymer solar cells (PSCs), while most of the DPP polymers were designed as symmetric structures containing identical aromatic linkers. In this manuscript, we design a new asymmetric DPP polymer with varied aromatic linkers in the backbone for application in FETs and PSCs. The designation provides the chance to finely adjust the energy levels of conjugated polymers so as to influence the device performance. The asymmetric polymer exhibits highly crystalline properties, high hole mobilities of 3.05 cm 2 V -1 s -1 in FETs, and a high efficiency of 5.9% in PSCs with spectra response from 300 to 850 nm. Morphology investigation demonstrates that the asymmetric polymer has a large crystal domain in blended thin films, indicating that the solar cell performance can be further enhanced by optimizing the microphase separation. The study reveals that the asymmetric design via adjusting the aromatic linkers in DPP polymers is a useful route toward flexible electronic devices.

S,N-Heteroacene-Based Copolymers for Highly Efficient Organic Field Effect Transistors and Organic Solar Cells: Critical Impact of Aromatic Subunits in the Ladder π-System.

PubMed

Chung, Chin-Lung; Chen, Hsieh-Chih; Yang, Yun-Siou; Tung, Wei-Yao; Chen, Jian-Wei; Chen, Wen-Chang; Wu, Chun-Guey; Wong, Ken-Tsung

2018-02-21

Three novel donor-acceptor alternating polymers containing ladder-type pentacyclic heteroacenes (PBo, PBi, and PT) are synthesized, characterized, and further applied to organic field effect transistors (OFETs) and polymer solar cells. Significant aspects of quinoidal characters, electrochemical properties, optical absorption, frontier orbitals, backbone coplanarity, molecular orientation, charge carrier mobilities, morphology discrepancies, and the corresponding device performances are notably different with various heteroarenes. PT exhibits a stronger quinoidal mesomeric structure, linear and coplanar conformation, smooth surface morphology, and better bimodal crystalline structures, which is beneficial to extend the π-conjugation and promotes charge transport via 3-D transport pathways and in consequence improves overall device performances. Organic photovoltaics based on the PT polymer achieve a power conversion efficiency of 6.04% along with a high short-circuit current density (J SC ) of 14.68 mA cm -2 , and a high hole mobility of 0.1 cm 2 V -1 s -1 is fulfilled in an OFET, which is superior to those of its counterparts, PBi and PBo.

Fabrication of Fe–Co Magnetostrictive Fiber Reinforced Plastic Composites and Their Sensor Performance Evaluation

PubMed Central

Katabira, Kenichi; Yoshida, Yu; Masuda, Atsuji; Watanabe, Akihito; Narita, Fumio

2018-01-01

The inverse magnetostrictive effect is an effective property for energy harvesting; the material needs to have large magnetostriction and ease of mass production. Fe–Co alloys being magnetostrictive materials have favorable characteristics which are high strength, ductility, and excellent workability, allowing easy fabrication of Fe–Co alloy fibers. In this study, we fabricated magnetostrictive polymer composites, in which Fe–Co fibers were woven into polyester fabric, and discussed their sensor performance. Compression and bending tests were carried out to measure the magnetic flux density change, and the effects of magnetization, bias magnetic field, and the location of the fibers on the performance were discussed. It was shown that magnetic flux density change due to compression and bending is related to the magnetization of the Fe–Co fiber and the bias magnetic field. The magnetic flux density change of Fe–Co fiber reinforced plastics was larger than that of the plastics with Terfenol-D particles. PMID:29522455

Device optimization and scaling properties of a gate-on-germanium source tunnel field-effect transistor

NASA Astrophysics Data System (ADS)

Chattopadhyay, Avik; Mallik, Abhijit; Omura, Yasuhisa

2015-06-01

A gate-on-germanium source (GoGeS) tunnel field-effect transistor (TFET) shows great promise for low-power (sub-0.5 V) applications. A detailed investigation, with the help of a numerical device simulator, on the effects of variation in different structural parameters of a GoGeS TFET on its electrical performance is reported in this paper. Structural parameters such as κ-value of the gate dielectric, length and κ-value of the spacer, and doping concentrations of both the substrate and source are considered. A low-κ symmetric spacer and a high-κ gate dielectric are found to yield better device performance. The substrate doping influences only the p-i-n leakage floor. The source doping is found to significantly affect performance parameters such as OFF-state current, ON-state current and subthreshold swing, in addition to a threshold voltage shift. Results of the investigation on the gate length scaling of such devices are also reported in this paper.

The performance of field scientists undertaking observations of early life fossils while in simulated space suit

NASA Astrophysics Data System (ADS)

Willson, D.; Rask, J. C.; George, S. C.; de Leon, P.; Bonaccorsi, R.; Blank, J.; Slocombe, J.; Silburn, K.; Steele, H.; Gargarno, M.; McKay, C. P.

2014-01-01

We conducted simulated Apollo Extravehicular Activity's (EVA) at the 3.45 Ga Australian 'Pilbara Dawn of life' (Western Australia) trail with field and non-field scientists using the University of North Dakota's NDX-1 pressurizable space suit to overview the effectiveness of scientist astronauts employing their field observation skills while looking for stromatolite fossil evidence. Off-world scientist astronauts will be faced with space suit limitations in vision, human sense perception, mobility, dexterity, the space suit fit, time limitations, and the psychological fear of death from accidents, causing physical fatigue reducing field science performance. Finding evidence of visible biosignatures for past life such as stromatolite fossils, on Mars, is a very significant discovery. Our preliminary overview trials showed that when in simulated EVAs, 25% stromatolite fossil evidence is missed with more incorrect identifications compared to ground truth surveys but providing quality characterization descriptions becomes less affected by simulated EVA limitations as the science importance of the features increases. Field scientists focused more on capturing high value characterization detail from the rock features whereas non-field scientists focused more on finding many features. We identified technologies and training to improve off-world field science performance. The data collected is also useful for NASA's "EVA performance and crew health" research program requirements but further work will be required to confirm the conclusions.

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

NASA Technical Reports Server (NTRS)

Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Del Castillo, Linda Y.; Fitzpatrick, Fred; Chen, Yuan

2016-01-01

Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

First results from the new RIKEN superconducting electron cyclotron resonance ion source (invited).

PubMed

Nakagawa, T; Higurashi, Y; Ohnishi, J; Aihara, T; Tamura, M; Uchiyama, A; Okuno, H; Kusaka, K; Kidera, M; Ikezawa, E; Fujimaki, M; Sato, Y; Watanabe, Y; Komiyama, M; Kase, M; Goto, A; Kamigaito, O; Yano, Y

2010-02-01

The next generation heavy ion accelerator facility, such as the RIKEN radio isotope (RI) beam factory, requires an intense beam of high charged heavy ions. In the past decade, performance of the electron cyclotron resonance (ECR) ion sources has been dramatically improved with increasing the magnetic field and rf frequency to enhance the density and confinement time of plasma. Furthermore, the effects of the key parameters (magnetic field configuration, gas pressure, etc.) on the ECR plasma have been revealed. Such basic studies give us how to optimize the ion source structure. Based on these studies and modern superconducting (SC) technology, we successfully constructed the new 28 GHz SC-ECRIS, which has a flexible magnetic field configuration to enlarge the ECR zone and to optimize the field gradient at ECR point. Using it, we investigated the effect of ECR zone size, magnetic field configuration, and biased disk on the beam intensity of the highly charged heavy ions with 18 GHz microwaves. In this article, we present the structure of the ion source and first experimental results with 18 GHz microwave in detail.

Portable and cost-effective pixel super-resolution on-chip microscope for telemedicine applications.

PubMed

Bishara, Waheb; Sikora, Uzair; Mudanyali, Onur; Su, Ting-Wei; Yaglidere, Oguzhan; Luckhart, Shirley; Ozcan, Aydogan

2011-01-01

We report a field-portable lensless on-chip microscope with a lateral resolution of <1 μm and a large field-of-view of ~24 mm(2). This microscope is based on digital in-line holography and a pixel super-resolution algorithm to process multiple lensfree holograms and obtain a single high-resolution hologram. In its compact and cost-effective design, we utilize 23 light emitting diodes butt-coupled to 23 multi-mode optical fibers, and a simple optical filter, with no moving parts. Weighing only ~95 grams, we demonstrate the performance of this field-portable microscope by imaging various objects including human malaria parasites in thin blood smears.

Space shuttle Production Verification Motor 1 (PV-1) static fire

NASA Technical Reports Server (NTRS)

1989-01-01

All inspection and instrumentation data indicate that the PV-1 static test firing conducted 18 Aug. 1988 was successful. With the exception of the intentionally flawed joints and static test modifications, PV-1 was flight configuration. Fail-safe flaws guaranteeing pressure to test the sealing capability of primary O-rings were included in the aft field joint, case-to-nozzle joint, and nozzle internal Joint 5. The test was conducted at ambient conditions, with the exception of the field joints and case/nozzle joints which were maintained at a minimum of 75 F. Ballistics performance values were within specification requirements. The PV-1 motor exhibited chamber pressure oscillations similar to previously tested Space Shuttle redesigned solid rocket motors, particularly QM-7. The first longitudinal mode oscillations experienced by PV-1 were the strongest ever measured in a Space Shuttle motor. Investigation into this observation is being conducted. Joint insulation performed as designed with no evidence of gas flow within unflawed forward field joints. The intentionally flawed center and aft case field joint insulation performance was excellent. There was no evidence of hot gas past the center field joint capture feature O-ring, the case-to-nozzle joint primary O-ring, or the aft field joint primary O-ring. O-ring seals and barriers with assured pressure at the flaws showed erosion and heat effect, but all sealed against passage of hot gases with the exception of the aft field joint capture feature O-ring. There was no evidence of erosion, heat effect, or blowby on any O-ring seals or barriers at the unflawed joints. Nozzle performance was nominal with typical erosion. Post-test examination revealed that the forward nose ring was of the old high performance motor design configuration with the 150-deg ply angle. All nozzle components remained intact for post-test evaluation. The thrust vector control system operated correctly. The water deluge system, CO2 quench, and other test equipment performed as planned during all required test operations.

Dynamic levitation performance of Gd-Ba-Cu-O and Y-Ba-Cu-O bulk superconductors under a varying external magnetic field

NASA Astrophysics Data System (ADS)

Liao, Hengpei; Zheng, Jun; Jin, Liwei; Huang, Huan; Deng, Zigang; Shi, Yunhua; Zhou, Difan; Cardwell, David A.

2018-07-01

We report that the dynamic levitation force of bulk high temperature superconductors (HTS) in motion attenuates when exposed to an inhomogeneous magnetic field. This phenomenon has significant potential implications for the long-term stability and running performance of HTS in maglev applications. In order to suppress the attenuation of the levitation force associated with fluctuations in magnetic field, we compare the dynamic levitation performance of single grain Y-Ba-Cu-O (YBCO) and Gd-Ba-Cu-O (GdBCO) bulk superconductors with relatively high critical current densities. A bespoke HTS maglev dynamic measurement system (SCML-03) incorporating a rotating circular permanent magnet guideway was employed to simulate the movement of HTS in a varying magnetic field at different frequencies (i.e. speed of rotation). The attenuation of the levitation force during dynamic operation, which is key parameter for effective maglev operation, has been evaluated experimentally. It is found that GdBCO bulk superconductors that exhibit superior levitation force properties are more able to resist the attenuation of levitation force compared with YBCO bulk materials under the same operating conditions. This investigation indicates clearly that GdBCO bulk superconductors can play an important role in suppressing attenuation of the levitation force, therefore improving the long-term levitation performance under dynamic operating conditions. This result is potentially significant in the design and application of HTS in maglev systems.

Technologies for suppressing charge-traps in novel p-channel Field-MOSFET with thick gate oxide

NASA Astrophysics Data System (ADS)

Miyoshi, Tomoyuki; Oshima, Takayuki; Noguchi, Junji

2015-05-01

High voltage laterally diffused MOS (LDMOS) FETs are widely used in analog applications. A Field-MOSFET with a thick gate oxide is one of the best ways of achieving a simpler design and smaller circuit footprint for high-voltage analog circuits. This paper focuses on an approach to improving the reliability of p-channel Field-MOSFETs. By introducing a fluorine implantation process and terminating fluorine at the LOCOS bird’s beak, the gate oxide breakdown voltage could be raised to 350 V at a high-slew rate and the negative bias temperature instability (NBTI) shift could be kept to within 15% over a product’s lifetime. By controlling the amount of charge in the insulating layer through improving the interlayer dielectric (ILD) deposition processes, a higher BVDSS of 370 V and 10-year tolerability of 300 V were obtained with an assisted reduced surface electric field (RESURF) effect. These techniques can supply an efficient solution for ensuring reliable high-performance applications.

A low-cost, high-field-strength magnetic resonance imaging-compatible actuator.

PubMed

Secoli, Riccardo; Robinson, Matthew; Brugnoli, Michele; Rodriguez y Baena, Ferdinando

2015-03-01

To perform minimally invasive surgical interventions with the aid of robotic systems within a magnetic resonance imaging scanner offers significant advantages compared to conventional surgery. However, despite the numerous exciting potential applications of this technology, the introduction of magnetic resonance imaging-compatible robotics has been hampered by safety, reliability and cost concerns: the robots should not be attracted by the strong magnetic field of the scanner and should operate reliably in the field without causing distortion to the scan data. Development of non-conventional sensors and/or actuators is thus required to meet these strict operational and safety requirements. These demands commonly result in expensive actuators, which mean that cost effectiveness remains a major challenge for such robotic systems. This work presents a low-cost, high-field-strength magnetic resonance imaging-compatible actuator: a pneumatic stepper motor which is controllable in open loop or closed loop, along with a rotary encoder, both fully manufactured in plastic, which are shown to perform reliably via a set of in vitro trials while generating negligible artifacts when imaged within a standard clinical scanner. © IMechE 2015.

Printing of highly conductive solution by alternating current electrohydrodynamic direct-write

NASA Astrophysics Data System (ADS)

Jiang, Jiaxin; Zheng, Gaofeng; Wang, Xiang; Zheng, Jianyi; Liu, Juan; Liu, Yifang; Li, Wenwang; Guo, Shumin

2018-03-01

Electrohydrodynamic Direct-Write (EDW) is a novel technology for the printing of micro/nano structures. In this paper, Alternating Current (AC) electrical field was introduced to improve the ejection stability of jet with highly conductive solution. By alternating the electrical field, the polarity of free charges on the surface of jet was changed and the average density of charge, as well as the repulsive force, was reduced to stabilize the jet. When the frequency of AC electrical field increased, the EDW process became more stable and the shape of deposited droplets became more regular. The diameter of printed droplets decreased and the deposition frequency increased with the increase of voltage frequency. The phenomenon of corona discharge was overcome effectively as well. To further evaluate the performance of AC EDW for highly conductive solution, more NaCl was added to the solution and the conductivity was increased to 2810μs/cm. With such high conductivity, the problem of serious corona discharge could still be prevented by AC EDW, and the diameter of printed droplets decreased significantly. This work provides an effective way to accelerate industrial applications of EDW.

MPD thruster technology

NASA Technical Reports Server (NTRS)

Myers, Roger M.

1991-01-01

Inhouse magnetoplasmadynamic (MPD) thruster technology is discussed. The study focussed on steady state thrusters at powers of less than 1 MW. Performance measurement and diagnostics technologies were developed for high power thrusters. Also developed was a MPD computer code. The stated goals of the program are to establish: performance and life limitation; influence of applied fields; propellant effects; and scaling laws. The presentation is mostly through graphs and charts.

Refraction error correction for deformation measurement by digital image correlation at elevated temperature

NASA Astrophysics Data System (ADS)

Su, Yunquan; Yao, Xuefeng; Wang, Shen; Ma, Yinji

2017-03-01

An effective correction model is proposed to eliminate the refraction error effect caused by an optical window of a furnace in digital image correlation (DIC) deformation measurement under high-temperature environment. First, a theoretical correction model with the corresponding error correction factor is established to eliminate the refraction error induced by double-deck optical glass in DIC deformation measurement. Second, a high-temperature DIC experiment using a chromium-nickel austenite stainless steel specimen is performed to verify the effectiveness of the correction model by the correlation calculation results under two different conditions (with and without the optical glass). Finally, both the full-field and the divisional displacement results with refraction influence are corrected by the theoretical model and then compared to the displacement results extracted from the images without refraction influence. The experimental results demonstrate that the proposed theoretical correction model can effectively improve the measurement accuracy of DIC method by decreasing the refraction errors from measured full-field displacements under high-temperature environment.

Nonlinear Effects in High Electric Fields

DTIC Science & Technology

1993-04-06

ion microscope above protruding atoms. Experiments to verify our theoret- ical predictions have been performed at the Fritz - Haber -Institute, see...Block’s experimental group at the Fritz - Haber -Institut in Berlin. A recent topic was thermal field desorption of hydrogen for which we have been able...Suchorskil, W. A. Schmidt’, J. H. Block’ and H. J. Kreuzer2 To be published in Surface Science ’Fitz- Haber Institut der Max-Planck-Gesellschaft

High gain, low noise, fully complementary logic inverter based on bi-layer WSe{sub 2} field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Das, Saptarshi; Roelofs, Andreas; Dubey, Madan

2014-08-25

In this article, first, we show that by contact work function engineering, electrostatic doping and proper scaling of both the oxide thickness and the flake thickness, high performance p- and n-type WSe{sub 2} field effect transistors (FETs) can be realized. We report record high drive current of 98 μA/μm for the electron conduction and 110 μA/μm for the hole conduction in Schottky barrier WSe{sub 2} FETs. Then, we combine high performance WSe{sub 2} PFET with WSe{sub 2} NFET in double gated transistor geometry to demonstrate a fully complementary logic inverter. We also show that by adjusting the threshold voltages for themore » NFET and the PFET, the gain and the noise margin of the inverter can be significantly enhanced. The maximum gain of our chemical doping free WSe{sub 2} inverter was found to be ∼25 and the noise margin was close to its ideal value of ∼2.5 V for a supply voltage of V{sub DD} = 5.0 V.« less

Improving the Stability of High-Performance Multilayer MoS2 Field-Effect Transistors.

PubMed

Liu, Na; Baek, Jongyeol; Kim, Seung Min; Hong, Seongin; Hong, Young Ki; Kim, Yang Soo; Kim, Hyun-Suk; Kim, Sunkook; Park, Jozeph

2017-12-13

In this study, we propose a method for improving the stability of multilayer MoS 2 field-effect transistors (FETs) by O 2 plasma treatment and Al 2 O 3 passivation while sustaining the high performance of bulk MoS 2 FET. The MoS 2 FETs were exposed to O 2 plasma for 30 s before Al 2 O 3 encapsulation to achieve a relatively small hysteresis and high electrical performance. A MoO x layer formed during the plasma treatment was found between MoS 2 and the top passivation layer. The MoO x interlayer prevents the generation of excess electron carriers in the channel, owing to Al 2 O 3 passivation, thereby minimizing the shift in the threshold voltage (V th ) and increase of the off-current leakage. However, prolonged exposure of the MoS 2 surface to O 2 plasma (90 and 120 s) was found to introduce excess oxygen into the MoO x interlayer, leading to more pronounced hysteresis and a high off-current. The stable MoS 2 FETs were also subjected to gate-bias stress tests under different conditions. The MoS 2 transistors exhibited negligible decline in performance under positive bias stress, positive bias illumination stress, and negative bias stress, but large negative shifts in V th were observed under negative bias illumination stress, which is attributed to the presence of sulfur vacancies. This simple approach can be applied to other transition metal dichalcogenide materials to understand their FET properties and reliability, and the resulting high-performance hysteresis-free MoS 2 transistors are expected to open up new opportunities for the development of sophisticated electronic applications.

Laboratory investigation of dust impacts on antennas in space

NASA Astrophysics Data System (ADS)

Sternovsky, Zoltan; Malaspina, D.; Gruen, E.; Drake, K.

2013-10-01

Recent observations of sharp voltage spikes by the WAVES electric field experiments onboard the twin STEREO spacecraft have been attributed to plasma clouds generated by the impact ionization of high velocity dust particles. The reported dust fluxes are much higher than those measured by dedicated dust detectors at 1 AU, which leads to the interpretation that the STEREO observations are due to nanometer-sized dust particles originating from the inner solar system and accelerated to high velocities by the solar wind magnetic field. However, this interpretation is based on a simplified model of coupling between the expanding plasma cloud from the dust impact and the WAVES electric field instrument. A series of laboratory measurements are performed to validate this model and to calibrate/investigate the effect of various impact parameters on the signals measured by the electric field instrument. The dust accelerator facility operating at the University of Colorado is used for the measurement with micron and submicron sized particles accelerated to 50 km/s. The first set of measurements is performed to calibrate the impact charge generated from materials specific the STEREO spacecraft and will help to interpret electric field data.

Physical phenomena in mercury ion thrusters

NASA Technical Reports Server (NTRS)

Wilbur, P. J.

1979-01-01

Experimental tests results demonstrating that reductions in screen grid thickness enhance the performance of ion thruster grids are presented. Shaping of the screen hole cross section is shown on the other hand not to affect performance substantially. The effect of the magnetic field in the vicinity of the hollow cathode on cathode performance is studied and test results are presented that show reductions in keeper voltages of a few volts can be realized by judicious applications of fields on the order of 100 gauss. The plasma downstream of a SERT 2 thruster operating without high voltage is studied. A model describing electron escape from the thruster under these conditions is discussed. A model defining the performance of the baffle aperture of an ion thruster is refined and experimental verification of the model is undertaken.

3D modeling of the total electric field induced by transcranial magnetic stimulation using the boundary element method

NASA Astrophysics Data System (ADS)

Salinas, F. S.; Lancaster, J. L.; Fox, P. T.

2009-06-01

Transcranial magnetic stimulation (TMS) delivers highly localized brain stimulations via non-invasive externally applied magnetic fields. This non-invasive, painless technique provides researchers and clinicians with a unique tool capable of stimulating both the central and peripheral nervous systems. However, a complete analysis of the macroscopic electric fields produced by TMS has not yet been performed. In this paper, we addressed the importance of the secondary E-field created by surface charge accumulation during TMS using the boundary element method (BEM). 3D models were developed using simple head geometries in order to test the model and compare it with measured values. The effects of tissue geometry, size and conductivity were also investigated. Finally, a realistically shaped head model was used to assess the effect of multiple surfaces on the total E-field. Secondary E-fields have the greatest impact at areas in close proximity to each tissue layer. Throughout the head, the secondary E-field magnitudes typically range from 20% to 35% of the primary E-field's magnitude. The direction of the secondary E-field was generally in opposition to the primary E-field; however, for some locations, this was not the case (i.e. going from high to low conductivity tissues). These findings show that realistically shaped head geometries are important for accurate modeling of the total E-field.

Effect of tapered magnetic field on expanding laser-produced plasma for heavy-ion inertial fusion

DOE PAGES

Kanesue, Takeshi; Ikeda, Shunsuke

2016-12-20

A laser ion source is a promising candidate as an ion source for heavy ion inertial fusion (HIF), where a pulsed ultra-intense and low-charged heavy ion beam is required. It is a key development for a laser ion source to transport laser-produced plasma with a magnetic field to achieve a high current beam. The effect of a tapered magnetic field on laser produced plasma is demonstrated by comparing the results with a straight solenoid magnet. The magnetic field of interest is a wider aperture on a target side and narrower aperture on an extraction side. Furthermore, based on the experimentallymore » obtained results, the performance of a scaled laser ion source for HIF was estimated.« less

Effects of Contact-Induced Doping on the Behaviors of Organic Photovoltaic Devices

DOE PAGES

Wang, Jian; Xu, Liang; Lee, Yun -Ju; ...

2015-10-09

Substrates can significantly affect the electronic properties of organic semiconductors. In this paper, we report the effects of contact-induced doping, arising from charge transfer between a high work function hole extraction layer (HEL) and the organic active layer, on organic photovoltaic device performance. Employing a high work function HEL is found to increase doping in the active layer and decrease photocurrent. Combined experimental and modeling investigations reveal that higher doping increases polaron–exciton quenching and carrier recombination within the field-free region. Consequently, there exists an optimal HEL work function that enables a large built-in field while keeping the active layer dopingmore » low. This value is found to be ~0.4 eV larger than the pinning level of the active layer material. As a result, these understandings establish a criterion for optimal design of the HEL when adapting a new active layer system and can shed light on optimizing performance in other organic electronic devices.« less

Measuring the complete cross-cell carrier mobility distributions in bulk heterojunction solar cells

NASA Astrophysics Data System (ADS)

Seifter, Jason; Sun, Yanming; Choi, Hyosung; Lee, Byoung Hoon; Heeger, Alan

2015-03-01

Carbon nanotube-enabled, vertical, organic field effect transistors (CN-VFETs) based on the small molecule dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) have demonstrated high current, low-power operation suitable for driving active matix organic light emitting diode (AMOLED) displays. This performance is achieved without the need for costly high-resolution patterning, despite the low mobility of the organic semiconductor, by employing sub-micron channel widths, defined in the vertical devices by the thickness of the semiconducting layer. Replacing the thermally evaporated small molecule semiconductor with a solution-processed polymer would possibly further simplify the fabrication process and reduce manufacturing cost. Here we investigate several polymer systems as wide bandgap semiconducting channel layers for potentially air stable and transparent CN-VFETs. The field effect mobility and optical transparency of the polymer layers are determined, and the performance and air stability of CN-VFET devices are measured. A. S. gratefully acknowledges support from the National Science Foundation under DMR-1156737.

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer

NASA Astrophysics Data System (ADS)

Tan, Qiuhong; Wang, Qianjin; Liu, Yingkai; Yan, Hailong; Cai, Wude; Yang, Zhikun

2018-04-01

Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)4Ti3O12 films as insulator, and HfO2 films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent properties such as large channel conductance, high on/off current ratio, high channel carrier mobility, great fatigue endurance performance, and data retention. Despite its thin capacitance equivalent thickness, the gate insulator with HfO2 defect control layer shows a low leakage current density of 3.1 × 10-9 A/cm2 at a gate voltage of - 3 V.

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer.

PubMed

Tan, Qiuhong; Wang, Qianjin; Liu, Yingkai; Yan, Hailong; Cai, Wude; Yang, Zhikun

2018-04-27

Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd) 4 Ti 3 O 12 films as insulator, and HfO 2 films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent properties such as large channel conductance, high on/off current ratio, high channel carrier mobility, great fatigue endurance performance, and data retention. Despite its thin capacitance equivalent thickness, the gate insulator with HfO 2 defect control layer shows a low leakage current density of 3.1 × 10 -9  A/cm 2 at a gate voltage of - 3 V.

Planar junctionless phototransistor: A potential high-performance and low-cost device for optical-communications

NASA Astrophysics Data System (ADS)

Ferhati, H.; Djeffal, F.

2017-12-01

In this paper, a new junctionless optical controlled field effect transistor (JL-OCFET) and its comprehensive theoretical model is proposed to achieve high optical performance and low cost fabrication process. Exhaustive study of the device characteristics and comparison between the proposed junctionless design and the conventional inversion mode structure (IM-OCFET) for similar dimensions are performed. Our investigation reveals that the proposed design exhibits an outstanding capability to be an alternative to the IM-OCFET due to the high performance and the weak signal detection benefit offered by this design. Moreover, the developed analytical expressions are exploited to formulate the objective functions to optimize the device performance using Genetic Algorithms (GAs) approach. The optimized JL-OCFET not only demonstrates good performance in terms of derived drain current and responsivity, but also exhibits superior signal to noise ratio, low power consumption, high-sensitivity, high ION/IOFF ratio and high-detectivity as compared to the conventional IM-OCFET counterpart. These characteristics make the optimized JL-OCFET potentially suitable for developing low cost and ultrasensitive photodetectors for high-performance and low cost inter-chips data communication applications.

Giant spin-torque diode sensitivity in the absence of bias magnetic field.

PubMed

Fang, Bin; Carpentieri, Mario; Hao, Xiaojie; Jiang, Hongwen; Katine, Jordan A; Krivorotov, Ilya N; Ocker, Berthold; Langer, Juergen; Wang, Kang L; Zhang, Baoshun; Azzerboni, Bruno; Amiri, Pedram Khalili; Finocchio, Giovanni; Zeng, Zhongming

2016-04-07

Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to apply a magnetic field. Here, we demonstrate nanoscale magnetic tunnel junction microwave detectors, exhibiting high-detection sensitivity of 75,400 mV mW(-1) at room temperature without any external bias fields, and for low-input power (micro-Watts or lower). This sensitivity is significantly larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes. Micromagnetic simulations and measurements reveal the essential role of injection locking to achieve this sensitivity performance. This mechanism may provide a pathway to enable further performance improvement of spin-torque diode microwave detectors.

Giant spin-torque diode sensitivity in the absence of bias magnetic field

PubMed Central

Fang, Bin; Carpentieri, Mario; Hao, Xiaojie; Jiang, Hongwen; Katine, Jordan A.; Krivorotov, Ilya N.; Ocker, Berthold; Langer, Juergen; Wang, Kang L.; Zhang, Baoshun; Azzerboni, Bruno; Amiri, Pedram Khalili; Finocchio, Giovanni; Zeng, Zhongming

2016-01-01

Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to apply a magnetic field. Here, we demonstrate nanoscale magnetic tunnel junction microwave detectors, exhibiting high-detection sensitivity of 75,400 mV mW−1 at room temperature without any external bias fields, and for low-input power (micro-Watts or lower). This sensitivity is significantly larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes. Micromagnetic simulations and measurements reveal the essential role of injection locking to achieve this sensitivity performance. This mechanism may provide a pathway to enable further performance improvement of spin-torque diode microwave detectors. PMID:27052973

Macular Ganglion Cell Imaging Study: Covariate Effects on the Spectral Domain Optical Coherence Tomography for Glaucoma Diagnosis.

PubMed

Jeong, Jae Hoon; Choi, Yun Jeong; Park, Ki Ho; Kim, Dong Myung; Jeoung, Jin Wook

2016-01-01

To evaluate the effect of multiple covariates on the diagnostic performance of the Cirrus high-definition optical coherence tomography (HD-OCT) for glaucoma detection. A prospective case-control study was performed and included 173 recently diagnosed glaucoma patients and 63 unaffected individuals from the Macular Ganglion Cell Imaging Study. Regression analysis of receiver operating characteristic were conducted to evaluate the influence of age, spherical equivalent, axial length, optic disc size, and visual field index on the macular ganglion cell-inner plexiform layer (GCIPL) and peripapillary retinal nerve fiber layer (RNFL) measurements. Disease severity, as measured by visual field index, had a significant effect on the diagnostic performance of all Cirrus HD-OCT parameters. Age, axial length and optic disc size were significantly associated with diagnostic accuracy of average peripapillary RNFL thickness, whereas axial length had a significant effect on the diagnostic accuracy of average GCIPL thickness. Diagnostic performance of the Cirrus HD-OCT may be more accurate in the advanced stages of glaucoma than at earlier stages. A smaller optic disc size was significantly associated with improved the diagnostic ability of average RNFL thickness measurements; however, GCIPL thickness may be less affected by age and optic disc size.

Ultrasensitive label-free detection of DNA hybridization by sapphire-based graphene field-effect transistor biosensor

NASA Astrophysics Data System (ADS)

Xu, Shicai; Jiang, Shouzhen; Zhang, Chao; Yue, Weiwei; Zou, Yan; Wang, Guiying; Liu, Huilan; Zhang, Xiumei; Li, Mingzhen; Zhu, Zhanshou; Wang, Jihua

2018-01-01

Graphene has attracted much attention in biosensing applications for its unique properties. Because of one-atom layer structure, every atom of graphene is exposed to the environment, making the electronic properties of graphene are very sensitive to charged analytes. Therefore, graphene is an ideal material for transistors in high-performance sensors. Chemical vapor deposition (CVD) method has been demonstrated the most successful method for fabricating large area graphene. However, the conventional CVD methods can only grow graphene on metallic substrate and the graphene has to be transferred to the insulating substrate for further device fabrication. The transfer process creates wrinkles, cracks, or tears on the graphene, which severely degrade electrical properties of graphene. These factors severely degrade the sensing performance of graphene. Here, we directly fabricated graphene on sapphire substrate by high temperature CVD without the use of metal catalysts. The sapphire-based graphene was patterned and make into a DNA biosensor in the configuration of field-effect transistor. The sensors show high performance and achieve the DNA detection sensitivity as low as 100 fM (10-13 M), which is at least 10 times lower than prior transferred CVD G-FET DNA sensors. The use of the sapphire-based G-FETs suggests a promising future for biosensing applications.

Influence of 2D electrostatic effects on the high-frequency noise behavior of sub-100-nm scaled MOSFETs

NASA Astrophysics Data System (ADS)

Rengel, Raul; Pardo, Daniel; Martin, Maria J.

2004-05-01

In this work, we have performed an investigation of the consequences of dowscaling the bulk MOSFET beyond the 100 nm range by means of a particle-based Monte Carlo simulator. Taking a 250 nm gate-length ideal structure as the starting point, the constant field scaling rules (also known as "classical" scaling) are considered and the high-frequency dynamic and noise performance of transistors with 130 nm, 90 nm and 60 nm gate-lengths are studied in depth. The analysis of internal quantities such as electric fields, velocity and energy of carriers or conduction band profiles shows the increasing importance of electrostatic two-dimensional effects due to the proximity of source and drain regions even when the most ideal bias conditions are imposed. As a consequence, a loss of the transistor action for the smallest MOSFET and the degradation of the most important high-frequency figures of merit is observed. Whereas the comparative values of intrinsic noise sources (SID, SIG) are improved when reducing the dimensions and the bias voltages, the poor dynamic performance yields an overall worse noise behaviour than expected (especially for Rn and Gass), limiting at the same time the useful bias ranges and conditions for a proper low-noise configuration.

Synthesis of poly(benzothiadiazole-co-dithienobenzodithiophenes) and effect of thiophene insertion for high-performance polymer solar cells.

PubMed

Yun, Hui-Jun; Lee, Yun-Ji; Yoo, Seung-Jin; Chung, Dae Sung; Kim, Yun-Hi; Kwon, Soon-Ki

2013-09-23

We describe herein the synthesis of novel donor-acceptor conjugated polymers with dithienobenzodithiophenes (DTBDT) as the electron donor and 2,1,3-benzothiadiazole as the electron acceptor for high-performance organic photovoltaics (OPVs). We studied the effects of strategically inserting thiophene into the DTBDT as a substituent on the skeletal structure on the opto-electronic performances of fabricated devices. From UV/Vis absorption, electrochemical, and field-effect transistor analyses, we found that the thiophene-containing DTBDT derivative can substantially increase the orbital overlap area between adjacent conjugated chains and thus dramatically enhance charge-carrier mobility up to 0.55 cm(2)  V(-1)  s(-1). The outstanding charge-transport characteristics of this polymer allowed the realization of high-performance organic solar cells with a power conversion efficiency (PCE) of 5.1 %. Detailed studies on the morphological factors that enable the maximum PCE of the polymer solar cells are discussed along with a hole/electron mobility analysis based on the space-charge-limited current model. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

New design of a cathode flow-field with a sub-channel to improve the polymer electrolyte membrane fuel cell performance

NASA Astrophysics Data System (ADS)

Wang, Yulin; Yue, Like; Wang, Shixue

2017-03-01

The cathode flow-field design of polymer electrolyte membrane (PEM) fuel cells determines the distribution of reactant gases and the removal of liquid water. A suitable design can result in perfect water management and thus high cell performance. In this paper, a new design for a cathode flow-field with a sub-channel was proposed and had been experimentally analyzed in a parallel flow-field PEM fuel cell. Three sub-channel inlets were placed along the cathode channel. The main-channel inlet was fed with moist air to humidify the membrane and maintain high proton conductivity, whereas, the sub-channel inlet was fed with dry air to enhance water removal in the flow channel. The experimental results indicated that the sub-channel design can decrease the pressure drop in the flow channel, and the sub-channels inlet positions (SIP, where the sub-channel inlets were placed along the cathode channel) and flow rates (SFR, percentage of air from the sub-channel inlet in the total cathode flow rate) had a considerable impact on water removal and cell performance. A proposed design that combines the SIP and SFR can effectively eliminate water from the fuel cell, increasing the maximum power density by more than 13.2% compared to the conventional design.

Impact of underlap spacer region variation on electrostatic and analog performance of symmetrical high-k SOI FinFET at 20 nm channel length

NASA Astrophysics Data System (ADS)

Jain, Neeraj; Raj, Balwinder

2017-12-01

Continued scaling of CMOS technology to achieve high performance and low power consumption of semiconductor devices in the complex integrated circuits faces the degradation in terms of electrostatic integrity, short channel effects (SCEs), leakage currents, device variability and reliability etc. Nowadays, multigate structure has become the promising candidate to overcome these problems. SOI FinFET is one of the best multigate structures that has gained importance in all electronic design automation (EDA) industries due to its improved short channel effects (SCEs), because of its more effective gate-controlling capabilities. In this paper, our aim is to explore the sensitivity of underlap spacer region variation on the performance of SOI FinFET at 20 nm channel length. Electric field modulation is analyzed with spacer length variation and electrostatic performance is evaluated in terms of performance parameter like electron mobility, electric field, electric potential, sub-threshold slope (SS), ON current (I on), OFF current (I off) and I on/I off ratio. The potential benefits of SOI FinFET at drain-to-source voltage, V DS = 0.05 V and V DS = 0.7 V towards analog and RF design is also evaluated in terms of intrinsic gain (A V), output conductance (g d), trans-conductance (g m), gate capacitance (C gg), and cut-off frequency (f T = g m/2πC gg) with spacer region variations.

Review on analog/radio frequency performance of advanced silicon MOSFETs

NASA Astrophysics Data System (ADS)

Passi, Vikram; Raskin, Jean-Pierre

2017-12-01

Aggressive gate-length downscaling of the metal-oxide-semiconductor field-effect transistor (MOSFET) has been the main stimulus for the growth of the integrated circuit industry. This downscaling, which has proved beneficial to digital circuits, is primarily the result of the need for improved circuit performance and cost reduction and has resulted in tremendous reduction of the carrier transit time across the channel, thereby resulting in very high cut-off frequencies. It is only in recent decades that complementary metal-oxide-semiconductor (CMOS) field-effect transistor (FET) has been considered as the radio frequency (RF) technology of choice. In this review, the status of the digital, analog and RF figures of merit (FoM) of silicon-based FETs is presented. State-of-the-art devices with very good performance showing low values of drain-induced barrier lowering, sub-threshold swing, high values of gate transconductance, Early voltage, cut-off frequencies, and low minimum noise figure, and good low-frequency noise characteristic values are reported. The dependence of these FoM on the device gate length is also shown, helping the readers to understand the trends and challenges faced by shorter CMOS nodes. Device performance boosters including silicon-on-insulator substrates, multiple-gate architectures, strain engineering, ultra-thin body and buried-oxide and also III-V and 2D materials are discussed, highlighting the transistor characteristics that are influenced by these boosters. A brief comparison of the two main contenders in continuing Moore’s law, ultra-thin body buried-oxide and fin field-effect transistors are also presented. The authors would like to mention that despite extensive research carried out in the semiconductor industry, silicon-based MOSFET will continue to be the driving force in the foreseeable future.

Assays of homeopathic remedies in rodent behavioural and psychopathological models.

PubMed

Bellavite, Paolo; Magnani, Paolo; Marzotto, Marta; Conforti, Anita

2009-10-01

The first part of this paper reviews the effects of homeopathic remedies on several models of anxiety-like behaviours developed and described in rodents. The existing literature in this field comprises some fifteen exploratory studies, often published in non-indexed and non-peer-reviewed journals. Only a few results have been confirmed by multiple laboratories, and concern Ignatia, Gelsemium, Chamomilla (in homeopathic dilutions/potencies). Nevertheless, there are some interesting results pointing to the possible efficacy of other remedies, and confirming a statistically significant effect of high dilutions of neurotrophic molecules and antibodies. In the second part of this paper we report some recent results obtained in our laboratory, testing Aconitum, Nux vomica, Belladonna, Argentum nitricum, Tabacum (all 5CH potency) and Gelsemium (5, 7, 9 and 30CH potencies) on mice using ethological models of behaviour. The test was performed using coded drugs and controls in double blind (operations and calculations). After an initial screening that showed all the tested remedies (except for Belladonna) to have some effects on the behavioural parameters (light-dark test and open-field test), but with high experimental variability, we focused our study on Gelsemium, and carried out two complete series of experiments. The results showed that Gelsemium had several effects on the exploratory behaviour of mice, which in some models were highly statistically significant (p < 0.001), in all the dilutions/dynamizations used, but with complex differences according to the experimental conditions and test performed. Finally, some methodological issues of animal research in this field of homeopathy are discussed. The "Gelsemium model" - encompassing experimental studies in vitro and in vivo from different laboratories and with different methods, including significant effects of its major active principle gelsemine - may play a pivotal rule for investigations on other homeopathic remedies.

Ultra-broad polypyrrole (PPy) nano-ribbons seeded by racemic surfactants aggregates and their high-performance electromagnetic radiation elimination.

PubMed

Jiao, Yingzhi; Wu, Fan; Zhang, Kun; Sun, Mengxiao; Xie, Aming; Dong, Wei

2017-08-04

Ribbon-like nano-structures possess high aspect ratios, and thus have great potential in the development of high-performance microwave absorption (MA) materials that can effectively eliminate adverse electromagnetic radiation. However, these nano-structures have been scarcely constructed in the field of MA, because of the lack of efficient synthetic routes. Herein, we developed an efficient method to successfully construct polypyrrole (PPy) nano-ribbons using the self-assembly aggregates of a racemic surfactant as the seeds. The frequency range with a reflection loss value of lower than -10 dB reached 7.68 GHz in the frequency range of 10.32-18.00 GHz, and surpassed all the currently reported PPy nano-structures, as well as most other MA nano-materials. Through changing the amount of surfactant, both the nano-structures and MA performance can be effectively regulated. Furthermore, the reason behind the high-performance MA of PPy nano-ribbons has been deeply explored. It opens up the opportunity for the application of conducting polymer nano-ribbons as a lightweight and tunable high-performance MA material, especially in applications of special aircraft and flexible electronics.

Ultra-broad polypyrrole (PPy) nano-ribbons seeded by racemic surfactants aggregates and their high-performance electromagnetic radiation elimination

NASA Astrophysics Data System (ADS)

Jiao, Yingzhi; Wu, Fan; Zhang, Kun; Sun, Mengxiao; Xie, Aming; Dong, Wei

2017-08-01

Ribbon-like nano-structures possess high aspect ratios, and thus have great potential in the development of high-performance microwave absorption (MA) materials that can effectively eliminate adverse electromagnetic radiation. However, these nano-structures have been scarcely constructed in the field of MA, because of the lack of efficient synthetic routes. Herein, we developed an efficient method to successfully construct polypyrrole (PPy) nano-ribbons using the self-assembly aggregates of a racemic surfactant as the seeds. The frequency range with a reflection loss value of lower than -10 dB reached 7.68 GHz in the frequency range of 10.32-18.00 GHz, and surpassed all the currently reported PPy nano-structures, as well as most other MA nano-materials. Through changing the amount of surfactant, both the nano-structures and MA performance can be effectively regulated. Furthermore, the reason behind the high-performance MA of PPy nano-ribbons has been deeply explored. It opens up the opportunity for the application of conducting polymer nano-ribbons as a lightweight and tunable high-performance MA material, especially in applications of special aircraft and flexible electronics.

Improved performance of InSe field-effect transistors by channel encapsulation

NASA Astrophysics Data System (ADS)

Liang, Guangda; Wang, Yiming; Han, Lin; Yang, Zai-Xing; Xin, Qian; Kudrynskyi, Zakhar R.; Kovalyuk, Zakhar D.; Patanè, Amalia; Song, Aimin

2018-06-01

Due to the high electron mobility and photo-responsivity, InSe is considered as an excellent candidate for next generation electronics and optoelectronics. In particular, in contrast to many high-mobility two-dimensional (2D) materials, such as phosphorene, InSe is more resilient to oxidation in air. Nevertheless, its implementation in future applications requires encapsulation techniques to prevent the adsorption of gas molecules on its surface. In this work, we use a common lithography resist, poly(methyl methacrylate) (PMMA) to encapsulate InSe-based field-effect transistors (FETs). The encapsulation of InSe by PMMA improves the electrical stability of the FETs under a gate bias stress, and increases both the drain current and electron mobility. These findings indicate the effectiveness of the PMMA encapsulation method, which could be applied to other 2D materials.

Two-Photon Vibrational Spectroscopy using local optical fields of gold and silver nanostructures

NASA Astrophysics Data System (ADS)

Kneipp, Katrin; Kneipp, Janina; Kneipp, Harald

2007-03-01

Spectroscopic effects can be strongly affected when they take place in the immediate vicinity of metal nanostructures due to coupling to surface plasmons. We introduce a new approach that suggests highly efficient two-photon labels as well as two-photon vibrational spectroscopy for non-destructive chemical probing. The underlying spectroscopic effect is the incoherent inelastic scattering of two photons on the vibrational quantum states performed in the enhanced local optical fields of gold nanoparticles, surface enhanced hyper Raman scattering (SEHRS). We infer effective two-photon cross sections for SEHRS on the order of 10^5 GM, similar or higher than the best known cross sections for two-photon fluorescence. SEHRS combines the advantages of two-photon spectroscopy with the structural information of vibrational spectroscopy, and the high sensitivity and nanometer-scale local confinement of plasmonics-based spectroscopy.

High Performance Vertical Organic Field Effect Transistors

DTIC Science & Technology

2010-05-01

systems. In pentacene /C60 bilayer system, [4] we showed that both the disordered structure of C60 and the charge trapping effect at the C60...much less significant than that by charge trapping at the interface. We also demonstrated that blending CdTe nanoparticles into a polymer–fullerene...for space applications b. We studied the photomultiplication effect in both evaporated ( pentacene /C60 bilayer) and bulk- heterojunction donor/acceptor

Solid effect in magic angle spinning dynamic nuclear polarization

NASA Astrophysics Data System (ADS)

Corzilius, Björn; Smith, Albert A.; Griffin, Robert G.

2012-08-01

For over five decades, the solid effect (SE) has been heavily utilized as a mechanism for performing dynamic nuclear polarization (DNP). Nevertheless, it has not found widespread application in contemporary, high magnetic field DNP experiments because SE enhancements display an ω _0 ^{ - 2} field dependence. In particular, for nominally forbidden zero and double quantum SE transitions to be partially allowed, it is necessary for mixing of adjacent nuclear spin states to occur, and this leads to the observed field dependence. However, recently we have improved our instrumentation and report here an enhancement of ɛ = 91 obtained with the organic radical trityl (OX063) in magic angle spinning experiments performed at 5 T and 80 K. This is a factor of 6-7 higher than previous values in the literature under similar conditions. Because the solid effect depends strongly on the microwave field strength, we attribute this large enhancement to larger microwave field strengths inside the sample volume, achieved with more efficient coupling of the gyrotron to the sample chamber. In addition, we develop a theoretical model to explain the dependence of the buildup rate of enhanced nuclear polarization and the steady-state enhancement on the microwave power. Buildup times and enhancements were measured as a function of 1H concentration for both trityl and Gd-DOTA. Comparison of the results indicates that for trityl the initial polarization step is the slower, rate-determining step. However, for Gd-DOTA the spread of nuclear polarization via homonuclear 1H spin diffusion is rate-limiting. Finally, we discuss the applicability of the solid effect at fields > 5 T and the requirements to address the unfavorable field dependence of the solid effect.

Analysis of magnetically immersed electron guns with non-adiabatic fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pikin, Alexander; Alessi, James G.; Beebe, Edward N.

Electron diode guns, which have strongly varying magnetic or electric fields in a cathode-anode gap, were investigated in order to generate laminar electron beams with high current density using magnetically immersed guns. By creating a strongly varying radial electric field in a cathode-anode gap of the electron gun, it was demonstrated that the optical properties of the gun can be significantly altered, which allows the generation of a laminar, high-current electron beam with relatively low magnetic field on the cathode. The relatively high magnetic compression of the electron beam achieved by this method is important for producing electron beams withmore » high current density. A similar result can be obtained by inducing a strong variation of the magnetic field in a cathode-anode gap. It was observed that creating a dip in the axial magnetic field in the cathode-anode gap of an adiabatic electron gun has an optical effect similar to guns with strong variation of radial electric field. By analyzing the electron trajectories angles and presenting the results in a gun performance map different geometries of magnetically immersed electron guns with non-adiabatic fields are compared with each other and with a more traditional adiabatic electron gun. Some advantages and limitations of guns with non-adiabatic fields are outlined. In conclusion, the tests results of non-adiabatic electron gun with modified magnetic field are presented.« less

Analysis of magnetically immersed electron guns with non-adiabatic fields

DOE PAGES

Pikin, Alexander; Alessi, James G.; Beebe, Edward N.; ...

2016-11-08

Electron diode guns, which have strongly varying magnetic or electric fields in a cathode-anode gap, were investigated in order to generate laminar electron beams with high current density using magnetically immersed guns. By creating a strongly varying radial electric field in a cathode-anode gap of the electron gun, it was demonstrated that the optical properties of the gun can be significantly altered, which allows the generation of a laminar, high-current electron beam with relatively low magnetic field on the cathode. The relatively high magnetic compression of the electron beam achieved by this method is important for producing electron beams withmore » high current density. A similar result can be obtained by inducing a strong variation of the magnetic field in a cathode-anode gap. It was observed that creating a dip in the axial magnetic field in the cathode-anode gap of an adiabatic electron gun has an optical effect similar to guns with strong variation of radial electric field. By analyzing the electron trajectories angles and presenting the results in a gun performance map different geometries of magnetically immersed electron guns with non-adiabatic fields are compared with each other and with a more traditional adiabatic electron gun. Some advantages and limitations of guns with non-adiabatic fields are outlined. In conclusion, the tests results of non-adiabatic electron gun with modified magnetic field are presented.« less

Analysis of magnetically immersed electron guns with non-adiabatic fields.

PubMed

Pikin, Alexander; Alessi, James G; Beebe, Edward N; Raparia, Deepak; Ritter, John

2016-11-01

Electron diode guns, which have strongly varying magnetic or electric fields in a cathode-anode gap, were investigated in order to generate laminar electron beams with high current density using magnetically immersed guns. By creating a strongly varying radial electric field in a cathode-anode gap of the electron gun, it was demonstrated that the optical properties of the gun can be significantly altered, which allows the generation of a laminar, high-current electron beam with relatively low magnetic field on the cathode. The relatively high magnetic compression of the electron beam achieved by this method is important for producing electron beams with high current density. A similar result can be obtained by inducing a strong variation of the magnetic field in a cathode-anode gap. It was observed that creating a dip in the axial magnetic field in the cathode-anode gap of an adiabatic electron gun has an optical effect similar to guns with strong variation of radial electric field. By analyzing the electron trajectories angles and presenting the results in a gun performance map, different geometries of magnetically immersed electron guns with non-adiabatic fields are compared with each other and with a more traditional adiabatic electron gun. Some advantages and limitations of guns with non-adiabatic fields are outlined. The tests' results of a non-adiabatic electron gun with modified magnetic field are presented.

Design, fabrication and testing of an air-breathing micro direct methanol fuel cell with compound anode flow field

NASA Astrophysics Data System (ADS)

Wang, Luwen; Zhang, Yufeng; Zhao, Youran; An, Zijiang; Zhou, Zhiping; Liu, Xiaowei

2011-10-01

An air-breathing micro direct methanol fuel cell (μDMFC) with a compound anode flow field structure (composed of the parallel flow field and the perforated flow field) is designed, fabricated and tested. To better analyze the effect of the compound anode flow field on the mass transfer of methanol, the compound flow field with different open ratios (ratio of exposure area to total area) and thicknesses of current collectors is modeled and simulated. Micro process technologies are employed to fabricate the end plates and current collectors. The performances of the μDMFC with a compound anode flow field are measured under various operating parameters. Both the modeled and the experimental results show that, comparing the conventional parallel flow field, the compound one can enhance the mass transfer resistance of methanol from the flow field to the anode diffusion layer. The results also indicate that the μDMFC with an anode open ratio of 40% and a thickness of 300 µm has the optimal performance under the 7 M methanol which is three to four times higher than conventional flow fields. Finally, a 2 h stability test of the μDMFC is performed with a methanol concentration of 7 M and a flow velocity of 0.1 ml min-1. The results indicate that the μDMFC can work steadily with high methanol concentration.

Ab initio molecular dynamics in a finite homogeneous electric field.

PubMed

Umari, P; Pasquarello, Alfredo

2002-10-07

We treat homogeneous electric fields within density functional calculations with periodic boundary conditions. A nonlocal energy functional depending on the applied field is used within an ab initio molecular dynamics scheme. The reliability of the method is demonstrated in the case of bulk MgO for the Born effective charges, and the high- and low-frequency dielectric constants. We evaluate the static dielectric constant by performing a damped molecular dynamics in an electric field and avoiding the calculation of the dynamical matrix. Application of this method to vitreous silica shows good agreement with experiment and illustrates its potential for systems of large size.

Neutron and gamma irradiation effects on power semiconductor switches

NASA Technical Reports Server (NTRS)

Schwarze, G. E.; Frasca, A. J.

1990-01-01

The performance characteristics of high-power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Neutron and gamma irradiation effects on power semiconductor switches

NASA Technical Reports Server (NTRS)

Schwarze, G. E.; Frasca, A. J.

1990-01-01

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Flux pinning in yttrium barium copper oxide coated conductors

NASA Astrophysics Data System (ADS)

Chen, Zhijun

High quality high-temperature-superconducting YBa2Cu 3O7-x (YBCO) films for industrial applications demand very high critical current densities Jc, which can only be achieved by strong three-dimensional (3D) pinning with deliberately introduced nano-precipitates. The purpose of this thesis is to provide an in-depth understanding of the 3D pinning in such YBCO films. In pulsed laser deposition (PLD) prepared YBCO films, a high density of anti-phase boundaries and stacking faults were found to be effective pinning defects for improving Jc in small fields. However, their failure to improve Jc at high fields shows that such naturally generated defects are not strong 3D pinning centers. A demonstration of strong 3D pinning was found in a metal organic chemical vapor deposition (MOCVD) grown YBCO coated conductor (CC) with a high density of (Y,Sm)2O3 nano-precipitates. We observed a significantly enhanced irreversibility field Hirr which, like other superconducting properties was independent of thickness, due to strong vortex-pin interactions. The advantage of 3D pinning was further illustrated by a bi-layer metalorganic deposition (MOD) grown YBCO CC with different 3D pinning structures in each layer. The Jc anisotropy of the bilayer was found to be the thickness-weighted sum of the anisotropy of the two individual layers, demonstrating an applicable way to tune the Jcanisotropy. Moreover, extensive low temperature and high magnetic field evaluations performed on an MOCVD CC with dense 3D (Y,Sm) 2O3 nano-precipitate pinning centers showed that its strong vortex pinning at 77 K correlated well to strong performance at 4.2 K too. YBCO films with quantitatively controlled artificial Y2O 3 nano-precipitates were also grown by PLD, and characterized over wide temperature and field ranges. Their Jc was found to be determined by the vortex pinning mediated by thermal fluctuation effects. In weak thermal-fluctuation situations Jc increased with decreasing effective precipitate spacing Lc. In other situations, Jc depends on both Lc and the size and elementary pinning strength of the nano-precipitates. In summary, this thesis presents detailed pinning studies on several differently grown YBCO films. Our results identify the optimum pinning structures in YBCO films and provide a systematic guidance for optimizing vortex pinning.

Ultrathin Single‐Crystalline Boron Nanosheets for Enhanced Electro‐Optical Performances

PubMed Central

Xu, Junqi; Chang, Yangyang; Gan, Lin; Ma, Ying

2015-01-01

Large‐scale single‐crystalline ultrathin boron nanosheets (UBNSs, ≈10 nm) are fabricated through an effective vapor–solid process via thermal decomposition of diborane. The UBNSs have obvious advantages over thicker boron nanomaterials in many aspects. Specifically, the UBNSs demonstrate excellent field emission performances with a low turn‐on field, E to, of 3.60 V μm−1 and a good stability. Further, the dependence of (turn‐on field) E to/(threshold field) E thr and effective work function, Φ e, on temperature is investigated and the possible mechanism of temperature‐dependent field emission phenomenon has been discussed. Moreover, electronic transport in a single UBNS reveals it to be an intrinsic p‐type semiconductor behavior with carrier mobility about 1.26 × 10−1 cm2 V−1 s−1, which is the best data in reported works. Interestingly, a multiconductive mechanism coexisting phenomenon has been explored based on the study of temperature‐dependent conductivity behavior of the UBNSs. Besides, the photodetector device fabricated from single‐crystalline UBNS demonstrates good sensitivity, reliable stability, and fast response, obviously superior to other reported boron nanomaterials. Such superior electronic‐optical performances are originated from the high quality of single crystal and large specific surface area of the UBNSs, suggesting the potential applications of the UBNSs in field‐emitters, interconnects, integrated circuits, and optoelectronic devices. PMID:27980947

Capacitance-voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer

NASA Astrophysics Data System (ADS)

Ko, Seung-Pil; Shin, Jong Mok; Jang, Ho Kyun; You, Min Youl; Jin, Jun-Eon; Choi, Miri; Cho, Jiung; Kim, Gyu-Tae

2018-02-01

Doping effects in devices based on two-dimensional (2D) materials have been widely studied. However, detailed analysis and the mechanism of the doping effect caused by encapsulation layers has not been sufficiently explored. In this work, we present experimental studies on the n-doping effect in WSe2 field effect transistors (FETs) with a high-k encapsulation layer (Al2O3) grown by atomic layer deposition. In addition, we demonstrate the mechanism and origin of the doping effect. After encapsulation of the Al2O3 layer, the threshold voltage of the WSe2 FET negatively shifted with the increase of the on-current. The capacitance-voltage measurements of the metal insulator semiconductor (MIS) structure proved the presence of the positive fixed charges within the Al2O3 layer. The flat-band voltage of the MIS structure of Au/Al2O3/SiO2/Si was shifted toward the negative direction on account of the positive fixed charges in the Al2O3 layer. Our results clearly revealed that the fixed charges in the Al2O3 encapsulation layer modulated the Fermi energy level via the field effect. Moreover, these results possibly provide fundamental ideas and guidelines to design 2D materials FETs with high-performance and reliability.

Development of a compact bushing for NBI

NASA Astrophysics Data System (ADS)

de Esch, H. P. L.; Simonin, A.; Grand, C.; Lepetit, B.; Lemoine, D.; Márquez-Mijares, M.; Minea, T.; Caillault, L.; Seznec, B.; Jager, T.; Odic, E.; Kirkpatrick, M. J.; Teste, Ph.; Dessante, Ph.; Almaksour, K.

2017-08-01

Research into a novel type of compact bushing is being conducted through the HVIV (High Voltage holding In Vacuum) partnership between CEA-Cadarache1, GeePs-Centralesupélec4, LPGP3 and LCAR2. The bushing aims to concentrate the high electric field inside its interior, rather than in the vacuum tank. Hence the field emission current is also concentrated inside the bushing and it can be attempted to suppress this so-called dark current by conditioning the internal surfaces and by adding gas. LCAR have performed theoretical quantum mechanical studies of electron field emission and the role of adsorbates in changing the work function. LPGP studied the ionization of gas due to field emission current and the behavior of micro particles exposed to emissive electron current in the vacuum gap under high electric fields. Experiments at Geeps have clarified the role of surface conditioning in reducing the dark current. Geeps also found that adding low pressure nitrogen gas to the vacuum is much more effective than helium in reducing the field emission. An interesting observation is the growth of carbon structures after exposure of an electrode to the electric field. Finally, IRFM have performed experiments on a single stage test bushing that features a 36 cm high porcelain insulator and two cylindrical electrode surfaces in vacuum or low-pressure gas. Using 0.1 Pa N2 gas, the voltage holding exceeded 185 kV over a 40 mm "vacuum" gap without dark current. Above this voltage, exterior breakdowns occurred over the insulator, which was in air. The project will finish with the fabrication of a 2-stage compact bushing, capable to withstand 400 kV.

Comparison of effects of overload on parameters and performance of samarium-cobalt and strontium-ferrite radially oriented permanent magnet brushless DC motors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Demerdash, N.A.; Nehl, T.W.; Nyamusa, T.A.

1985-08-01

Effects of high momentary overloads on the samarium-cobalt and strontium-ferrite permanent magnets and the magnetic field in electronically commutated brushless dc machines, as well as their impact on the associated machine parameters were studied. The effect of overload on the machine parameters, and subsequently on the machine system performance was also investigated. This was accomplished through the combined use of finite element analysis of the magnetic field in such machines, perturbation of the magnetic energies to determine machine inductances, and dynamic simulation of the performance of brushless dc machines, when energized from voltage source inverters. These effects were investigated throughmore » application of the above methods to two equivalent 15 hp brushless dc motors, one of which was built with samarium-cobalt magnets, while the other was built with strontium- ferrite magnets. For momentary overloads as high as 4.5 p.u. magnet flux reductions of 29% and 42% of the no load flux were obtained in the samarium-cobalt and strontiumferrite machines, respectively. Corresponding reductions in the line to line armature inductances of 52% and 46% of the no load values were reported for the samarium-cobalt and strontium-ferrite cases, respectively. The overload affected the profiles and magnitudes of armature induced back emfs. Subsequently, the effects of overload on machine parameters were found to have significant impact on the performance of the machine systems, where findings indicate that the samarium-cobalt unit is more suited for higher overload duties than the strontium-ferrite machine.« less

Computations of ideal and real gas high altitude plume flows

NASA Technical Reports Server (NTRS)

Feiereisen, William J.; Venkatapathy, Ethiraj

1988-01-01

In the present work, complete flow fields around generic space vehicles in supersonic and hypersonic flight regimes are studied numerically. Numerical simulation is performed with a flux-split, time asymptotic viscous flow solver that incorporates a generalized equilibrium chemistry model. Solutions to generic problems at various altitude and flight conditions show the complexity of the flow, the equilibrium chemical dissociation and its effect on the overall flow field. Viscous ideal gas solutions are compared against equilibrium gas solutions to illustrate the effect of equilibrium chemistry. Improved solution accuracy is achieved through adaptive grid refinement.

Silicon detectors for combined MR-PET and MR-SPECT imaging

NASA Astrophysics Data System (ADS)

Studen, A.; Brzezinski, K.; Chesi, E.; Cindro, V.; Clinthorne, N. H.; Cochran, E.; Grošičar, B.; Grkovski, M.; Honscheid, K.; Kagan, H.; Lacasta, C.; Llosa, G.; Mikuž, M.; Stankova, V.; Weilhammer, P.; Žontar, D.

2013-02-01

Silicon based devices can extend PET-MR and SPECT-MR imaging to applications, where their advantages in performance outweigh benefits of high statistical counts. Silicon is in many ways an excellent detector material with numerous advantages, among others: excellent energy and spatial resolution, mature processing technology, large signal to noise ratio, relatively low price, availability, versatility and malleability. The signal in silicon is also immune to effects of magnetic field at the level normally used in MR devices. Tests in fields up to 7 T were performed in a study to determine effects of magnetic field on positron range in a silicon PET device. The curvature of positron tracks in direction perpendicular to the field's orientation shortens the distance between emission and annihilation point of the positron. The effect can be fully appreciated for a rotation of the sample for a fixed field direction, compressing range in all dimensions. A popular Ga-68 source was used showing a factor of 2 improvement in image noise compared to zero field operation. There was also a little increase in noise as the reconstructed resolution varied between 2.5 and 1.5 mm. A speculative applications can be recognized in both emission modalities, SPECT and PET. Compton camera is a subspecies of SPECT, where a silicon based scatter as a MR compatible part could inserted into the MR bore and the secondary detector could operate in less constrained environment away from the magnet. Introducing a Compton camera also relaxes requirements of the radiotracers used, extending the range of conceivable photon energies beyond 140.5 keV of the Tc-99m. In PET, one could exploit the compressed sub-millimeter range of positrons in the magnetic field. To exploit the advantage, detectors with spatial resolution commensurate to the effect must be used with silicon being an excellent candidate. Measurements performed outside of the MR achieving spatial resolution below 1 mm are reported.

CRREL Technical Publications. Supplement 1976-1990

DTIC Science & Technology

1990-01-01

course and water heading, and ship speed on the airborne detection of high resistivity areas The longed wastewater application at the sites No...enplsTes by rered-phase high - performance iq- MILITARY OPERATION, SNOW COVER EF- 14 and 21 days at -10 C A field test was conducted uid chromato;raphy...effects of thawing and freezing soil. deep snow, irplines freezing front. Temperature sensors were placed within overlay files into a high - speed graphical

Solvent-free directed patterning of a highly ordered liquid crystalline organic semiconductor via template-assisted self-assembly for organic transistors.

PubMed

Kim, Aryeon; Jang, Kwang-Suk; Kim, Jinsoo; Won, Jong Chan; Yi, Mi Hye; Kim, Hanim; Yoon, Dong Ki; Shin, Tae Joo; Lee, Myong-Hoon; Ka, Jae-Won; Kim, Yun Ho

2013-11-20

Highly ordered organic semiconductor micropatterns of the liquid-crystalline small molecule 2,7-didecylbenzothienobenzothiophene (C10 -BTBT) are fabricated using a simple method based on template-assisted self-assembly (TASA). The liquid crystallinity of C10 -BTBT allows solvent-free fabrication of high-performance printed organic field-effect transistors (OFETs). © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Preliminary Results of Performance Measurements on a Cylindrical Hall-Effect Thruster with Magnetic Field Generated by Permanent Magnets

NASA Technical Reports Server (NTRS)

Polzin, K. A.; Raitses, Y.; Merino, E.; Fisch, N. J.

2008-01-01

The performance of a low-power cylindrical Hall thruster, which more readily lends itself to miniaturization and low-power operation than a conventional (annular) Hall thruster, was measured using a planar plasma probe and a thrust stand. The field in the cylindrical thruster was produced using permanent magnets, promising a power reduction over previous cylindrical thruster iterations that employed electromagnets to generate the required magnetic field topology. Two sets of ring-shaped permanent magnets are used, and two different field configurations can be produced by reorienting the poles of one magnet relative to the other. A plasma probe measuring ion flux in the plume is used to estimate the current utilization for the two magnetic configurations. The measurements indicate that electron transport is impeded much more effectively in one configuration, implying a higher thrust efficiency. Preliminary thruster performance measurements on this configuration were obtained over a power range of 100-250 W. The thrust levels over this power range were 3.5-6.5 mN, with anode efficiencies and specific impulses spanning 14-19% and 875- 1425 s, respectively. The magnetic field in the thruster was lower for the thrust measurements than the plasma probe measurements due to heating and weakening of the permanent magnets, reducing the maximum field strength from 2 kG to roughly 750-800 G. The discharge current levels observed during thrust stand testing were anomalously high compared to those levels measured in previous experiments with this thruster.

Effect of α-particle irradiation on a NdFeAs(O,F) thin film

NASA Astrophysics Data System (ADS)

Tarantini, C.; Iida, K.; Sumiya, N.; Chihara, M.; Hatano, T.; Ikuta, H.; Singh, R. K.; Newman, N.; Larbalestier, D. C.

2018-07-01

The effect of α-particle irradiation on a NdFeAs(O,F) thin film has been investigated to determine how the introduction of defects affects basic superconducting properties, including the critical temperature T c and the upper critical field H c2, and properties more of interest for applications, like the critical current density J c and the related pinning landscape. The irradiation-induced suppression of the film T c is significantly smaller than on a similarly damaged single crystal. Moreover H c2 behaves differently, depending on the field orientation: for H//c the H c2 slope monotonically increases with increasing disorder, whereas for H//ab it remains constant at low dose and it increases only when the sample is highly disordered. This suggests that a much higher damage level is necessary to drive the NdFeAs(O,F) thin film into the dirty limit. Despite the increase in the low temperature H c2, the effects on the J c(H//c) performances are moderate in the measured temperature and field ranges, with a shifting of the pinning force maximum from 4.5 to 6 T after an irradiation of 2 × 1015 cm-2. On the contrary, J c(H//ab) is always suppressed. The analysis demonstrates that irradiation does introduce point defects (PD) acting as pinning centres proportionally to the irradiation fluence but also suppresses the effectiveness of c-axis correlated pinning present in the pristine sample. We estimate that significant performance improvements may be possible at high field or at temperatures below 10 K. The suppression of the J c(H//ab) performance is not related to a decrease of the J c anisotropy as found in other superconductors. Instead it is due to the presence of PD that decrease the efficiency of the ab-plane intrinsic pinning typical of materials with a layered structure.

R1 dispersion contrast at high field with fast field-cycling MRI.

PubMed

Bödenler, Markus; Basini, Martina; Casula, Maria Francesca; Umut, Evrim; Gösweiner, Christian; Petrovic, Andreas; Kruk, Danuta; Scharfetter, Hermann

2018-05-01

Contrast agents with a strong R 1 dispersion have been shown to be effective in generating target-specific contrast in MRI. The utilization of this R 1 field dependence requires the adaptation of an MRI scanner for fast field-cycling (FFC). Here, we present the first implementation and validation of FFC-MRI at a clinical field strength of 3 T. A field-cycling range of ±100 mT around the nominal B 0 field was realized by inserting an additional insert coil into an otherwise conventional MRI system. System validation was successfully performed with selected iron oxide magnetic nanoparticles and comparison to FFC-NMR relaxometry measurements. Furthermore, we show proof-of-principle R 1 dispersion imaging and demonstrate the capability of generating R 1 dispersion contrast at high field with suppressed background signal. With the presented ready-to-use hardware setup it is possible to investigate MRI contrast agents with a strong R 1 dispersion at a field strength of 3 T. Copyright © 2018 Elsevier Inc. All rights reserved.

A 30 mK, 13.5 T scanning tunneling microscope with two independent tips

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roychowdhury, Anita; Center for Nanophysics and Advanced Materials, Department of Physics, University of Maryland, College Park, Maryland 20740; Gubrud, M. A.

We describe the design, construction, and performance of an ultra-low temperature, high-field scanning tunneling microscope (STM) with two independent tips. The STM is mounted on a dilution refrigerator and operates at a base temperature of 30 mK with magnetic fields of up to 13.5 T. We focus on the design of the two-tip STM head, as well as the sample transfer mechanism, which allows in situ transfer from an ultra high vacuum preparation chamber while the STM is at 1.5 K. Other design details such as the vibration isolation and rf-filtered wiring are also described. Their effectiveness is demonstrated viamore » spectral current noise characteristics and the root mean square roughness of atomic resolution images. The high-field capability is shown by the magnetic field dependence of the superconducting gap of Cu{sub x}Bi{sub 2}Se{sub 3}. Finally, we present images and spectroscopy taken with superconducting Nb tips with the refrigerator at 35 mK that indicate that the effective temperature of our tips/sample is approximately 184 mK, corresponding to an energy resolution of 16 μeV.« less

Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

NASA Astrophysics Data System (ADS)

Morita, Yukinori; Mori, Takahiro; Migita, Shinji; Mizubayashi, Wataru; Tanabe, Akihito; Fukuda, Koichi; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shin-ichi; Liu, Yongxun; Masahara, Meishoku; Ota, Hiroyuki

2014-12-01

The performance of parallel electric field tunnel field-effect transistors (TFETs), in which band-to-band tunneling (BTBT) was initiated in-line to the gate electric field was evaluated. The TFET was fabricated by inserting an epitaxially-grown parallel-plate tunnel capacitor between heavily doped source wells and gate insulators. Analysis using a distributed-element circuit model indicated there should be a limit of the drain current caused by the self-voltage-drop effect in the ultrathin channel layer.

Minimizing performance degradation induced by interfacial recombination in perovskite solar cells through tailoring of the transport layer electronic properties

NASA Astrophysics Data System (ADS)

Xu, Liang; Molaei Imenabadi, Rouzbeh; Vandenberghe, William G.; Hsu, Julia W. P.

2018-03-01

The performance of hybrid organic-inorganic metal halide perovskite solar cells is investigated using one-dimensional drift-diffusion device simulations. We study the effects of interfacial defect density, doping concentration, and electronic level positions of the charge transport layer (CTL). Choosing CTLs with a favorable band alignment, rather than passivating CTL-perovskite interfacial defects, is shown to be beneficial for maintaining high power-conversion efficiency, due to reduced minority carrier density arising from a favorable local electric field profile. Insights from this study provide theoretical guidance on practical selection of CTL materials for achieving high-performance perovskite solar cells.

Current crowding mediated large contact noise in graphene field-effect transistors

PubMed Central

Karnatak, Paritosh; Sai, T. Phanindra; Goswami, Srijit; Ghatak, Subhamoy; Kaushal, Sanjeev; Ghosh, Arindam

2016-01-01

The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene–metal interface or the contact noise, on the performance of graphene field-effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field-effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000 cm2 V−1 s−1. Our phenomenological model for contact noise because of current crowding in purely two-dimensional conductors confirms that the contacts dominate the measured resistance noise in all graphene field-effect transistors in the two-probe or invasive four-probe configurations, and surprisingly, also in nearly noninvasive four-probe (Hall bar) configuration in the high-mobility devices. The microscopic origin of contact noise is directly linked to the fluctuating electrostatic environment of the metal–channel interface, which could be generic to two-dimensional material-based electronic devices. PMID:27929087

Current crowding mediated large contact noise in graphene field-effect transistors

NASA Astrophysics Data System (ADS)

Karnatak, Paritosh; Sai, T. Phanindra; Goswami, Srijit; Ghatak, Subhamoy; Kaushal, Sanjeev; Ghosh, Arindam

2016-12-01

The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field-effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field-effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000 cm2 V-1 s-1. Our phenomenological model for contact noise because of current crowding in purely two-dimensional conductors confirms that the contacts dominate the measured resistance noise in all graphene field-effect transistors in the two-probe or invasive four-probe configurations, and surprisingly, also in nearly noninvasive four-probe (Hall bar) configuration in the high-mobility devices. The microscopic origin of contact noise is directly linked to the fluctuating electrostatic environment of the metal-channel interface, which could be generic to two-dimensional material-based electronic devices.

P-type field effect transistor based on Na-doped BaSnO3

NASA Astrophysics Data System (ADS)

Jang, Yeaju; Hong, Sungyun; Park, Jisung; Char, Kookrin

We fabricated field effect transistors (FET) based on the p-type Na-doped BaSnO3 (BNSO) channel layer. The properties of epitaxial BNSO channel layer were controlled by the doping rate. In order to modulate the p-type FET, we used amorphous HfOx and epitaxial BaHfO3 (BHO) gate oxides, both of which have high dielectric constants. HfOx was deposited by atomic-layer-deposition and BHO was epitaxially grown by pulsed laser deposition. The pulsed laser deposited SrRuO3 (SRO) was used as the source and the drain contacts. Indium-tin oxide and La-doped BaSnO3 were used as the gate electrodes on top of the HfOx and the BHO gate oxides, respectively. We will analyze and present the performances of the BNSO field effect transistor such as the IDS-VDS, the IDS-VGS, the Ion/Ioff ratio, and the field effect mobility. Samsung Science and Technology Foundation.

Multifunctional Self-Assembled Monolayers for Organic Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Cernetic, Nathan

Organic field effect transistors (OFETs) have the potential to reach commercialization for a wide variety of applications such as active matrix display circuitry, chemical and biological sensing, radio-frequency identification devices and flexible electronics. In order to be commercially competitive with already at-market amorphous silicon devices, OFETs need to approach similar performance levels. Significant progress has been made in developing high performance organic semiconductors and dielectric materials. Additionally, a common route to improve the performance metric of OFETs is via interface modification at the critical dielectric/semiconductor and electrode/semiconductor interface which often play a significant role in charge transport properties. These metal oxide interfaces are typically modified with rationally designed multifunctional self-assembled monolayers. As means toward improving the performance metrics of OFETs, rationally designed multifunctional self-assembled monolayers are used to explore the relationship between surface energy, SAM order, and SAM dipole on OFET performance. The studies presented within are (1) development of a multifunctional SAM capable of simultaneously modifying dielectric and metal surface while maintaining compatibility with solution processed techniques (2) exploration of the relationship between SAM dipole and anchor group on graphene transistors, and (3) development of self-assembled monolayer field-effect transistor in which the traditional thick organic semiconductor is replaced by a rationally designed self-assembled monolayer semiconductor. The findings presented within represent advancement in the understanding of the influence of self-assembled monolayers on OFETs as well as progress towards rationally designed monolayer transistors.

Latest Results of ILC High-Gradient R&D 9-cell Cavities at JLAB

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geng, Rongli

2008-02-11

It has been over a year since JLAB started processing and testing ILC 9-cell cavities in the frame work of ILC high-gradient cavity R&D, aiming at the goal of a 35 MV/m gradient at a Q of 1E10 with a yield of 90%. The necessary cavity processing steps include field flatness tuning, electropolishing (EP), hydrogen out-gassing under vacuum, high-pressure water rinsing, clean room assembly, and low temperature bake. These are followed by RF test at 2 Kelvin. Ultrasonic cleaning with Micro-90, an effective post-EP rinsing recipe discovered at JLAB, is routinely used. Seven industry manufactured 9-cell TESLAshape cavities are processedmore » and tested repeatedly. So far, 33 EP cycles are accumulated, corresponding to more than 65 hours of active EP time. An emphasis put on RF testing is to discern cavity quench characteristics, including its nature and its location. Often times, the cavity performance is limited by thermal-magnetic quench instead of field emission. The quench field in some cavities is lower than 20 MV/m and remains unchanged despite repeated EP, implying material and/or fabrication defects. The quench field in some other cavities is high but changes unpredictably after repeated EP, suggesting processing induced defects. Based on our experience and results, several areas are identified where improvement is needed to improve cavity performance as well as yield.« less

Local Electric Field Facilitates High-Performance Li-Ion Batteries.

PubMed

Liu, Youwen; Zhou, Tengfei; Zheng, Yang; He, Zhihai; Xiao, Chong; Pang, Wei Kong; Tong, Wei; Zou, Youming; Pan, Bicai; Guo, Zaiping; Xie, Yi

2017-08-22

By scrutinizing the energy storage process in Li-ion batteries, tuning Li-ion migration behavior by atomic level tailoring will unlock great potential for pursuing higher electrochemical performance. Vacancy, which can effectively modulate the electrical ordering on the nanoscale, even in tiny concentrations, will provide tempting opportunities for manipulating Li-ion migratory behavior. Herein, taking CuGeO 3 as a model, oxygen vacancies obtained by reducing the thickness dimension down to the atomic scale are introduced in this work. As the Li-ion storage progresses, the imbalanced charge distribution emerging around the oxygen vacancies could induce a local built-in electric field, which will accelerate the ions' migration rate by Coulomb forces and thus have benefits for high-rate performance. Furthermore, the thus-obtained CuGeO 3 ultrathin nanosheets (CGOUNs)/graphene van der Waals heterojunctions are used as anodes in Li-ion batteries, which deliver a reversible specific capacity of 1295 mAh g -1 at 100 mA g -1 , with improved rate capability and cycling performance compared to their bulk counterpart. Our findings build a clear connection between the atomic/defect/electronic structure and intrinsic properties for designing high-efficiency electrode materials.

Comparing the Robustness of High-Frequency Traveling-Wave Tube Slow-Wave Circuits

NASA Technical Reports Server (NTRS)

Chevalier, Christine T.; Wilson, Jeffrey D.; Kory, Carol L.

2007-01-01

A three-dimensional electromagnetic field simulation software package was used to compute the cold-test parameters, phase velocity, on-axis interaction impedance, and attenuation, for several high-frequency traveling-wave tube slow-wave circuit geometries. This research effort determined the effects of variations in circuit dimensions on cold-test performance. The parameter variations were based on the tolerances of conventional micromachining techniques.

Characterization and demonstration results of a SQUID magnetometer system developed for geomagnetic field measurements

NASA Astrophysics Data System (ADS)

Kawai, J.; Miyamoto, M.; Kawabata, M.; Nosé, M.; Haruta, Y.; Uehara, G.

2017-08-01

We characterized a low temperature superconducting quantum interference device (SQUID) magnetometer system developed for high-sensitivity geomagnetic field measurement, and demonstrated the detection of weak geomagnetic signals. The SQUID magnetometer system is comprised of three-axis SQUID magnetometers housed in a glass fiber reinforced plastic cryostat, readout electronics with flux locked loop (FLL), a 24-bit data logger with a global positioning system and batteries. The system noise was approximately 0.2 pT √Hz- 1/2 in the 1-50 Hz frequency range. This performance was determined by including the thermal noise and the shielding effect of the copper shield, which covered the SQUID magnetometers to eliminate high-frequency interference. The temperature drift of the system was ˜0.8 pT °C- 1 in an FLL operation. The system operated for a month using 33 l liquid helium. Using this system, we performed the measurements of geomagnetic field in the open-air, far away from the city. The system could detect weak geomagnetic signals such as the Schumann resonance with sixth harmonics, and the ionospheric Alfvén resonance appearing at night, for the north-south and east-west components of the geomagnetic field. We confirm that the system was capable of high-sensitivity measurement of the weak geomagnetic activities.

36-segmented high magnetic field hexapole magnets for electron cyclotron resonance ion source.

PubMed

Sun, L T; Zhao, H W; Zhang, Z M; Wang, H; Ma, B H; Zhang, X Z; Li, X X; Feng, Y C; Li, J Y; Guo, X H; Shang, Y; Zhao, H Y

2007-05-01

Two high magnetic field hexapoles for electron cyclotron resonance ion source (ECRIS) have successfully fabricated to provide sufficient radial magnetic confinement to the ECR plasma. The highest magnetic field at the inner pole tip of one of the magnets exceeds 1.5 T, with the inner diameter (i.d.)=74 mm. The other hexapole magnet provides more than 1.35 T magnetic field at the inner pole tip, and the i.d. is 84 mm. In this article, we discuss the necessity to have a good radial magnetic field confinement and the importance of a Halbach hexapole to a high performance ECRIS. The way to design a high magnetic field Halbach structure hexapole and one possible solution to the self-demagnetization problem are both discussed. Based on the above discussions, two high magnetic field hexapoles have been fabricated to be utilized on two high performance ECRISs in Lanzhou. The preliminary results obtained from the two ECR ion sources are given.

Improved transfer of graphene for gated Schottky-junction, vertical, organic, field-effect transistors.

PubMed

Lemaitre, Maxime G; Donoghue, Evan P; McCarthy, Mitchell A; Liu, Bo; Tongay, Sefaattin; Gila, Brent; Kumar, Purushottam; Singh, Rajiv K; Appleton, Bill R; Rinzler, Andrew G

2012-10-23

An improved process for graphene transfer was used to demonstrate high performance graphene enabled vertical organic field effect transistors (G-VFETs). The process reduces disorder and eliminates the polymeric residue that typically plagues transferred films. The method also allows for purposely creating pores in the graphene of a controlled areal density. Transconductance observed in G-VFETs fabricated with a continuous (pore-free) graphene source electrode is attributed to modulation of the contact barrier height between the graphene and organic semiconductor due to a gate field induced Fermi level shift in the low density of electronic-states graphene electrode. Pores introduced in the graphene source electrode are shown to boost the G-VFET performance, which scales with the areal pore density taking advantage of both barrier height lowering and tunnel barrier thinning. Devices with areal pore densities of 20% exhibit on/off ratios and output current densities exceeding 10(6) and 200 mA/cm(2), respectively, at drain voltages below 5 V.

High-performance computing for airborne applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Quinn, Heather M; Manuzzato, Andrea; Fairbanks, Tom

2010-06-28

Recently, there has been attempts to move common satellite tasks to unmanned aerial vehicles (UAVs). UAVs are significantly cheaper to buy than satellites and easier to deploy on an as-needed basis. The more benign radiation environment also allows for an aggressive adoption of state-of-the-art commercial computational devices, which increases the amount of data that can be collected. There are a number of commercial computing devices currently available that are well-suited to high-performance computing. These devices range from specialized computational devices, such as field-programmable gate arrays (FPGAs) and digital signal processors (DSPs), to traditional computing platforms, such as microprocessors. Even thoughmore » the radiation environment is relatively benign, these devices could be susceptible to single-event effects. In this paper, we will present radiation data for high-performance computing devices in a accelerated neutron environment. These devices include a multi-core digital signal processor, two field-programmable gate arrays, and a microprocessor. From these results, we found that all of these devices are suitable for many airplane environments without reliability problems.« less

Performance Evaluation of an Automotive-Grade, High Speed Gate Driver for SiC FETs, Type UCC27531, Over a Wide Temperature Range

NASA Technical Reports Server (NTRS)

Boomer, Kristen; Hammoud, Ahmad

2015-01-01

Silicon carbide (SiC) devices are becoming widely used in electronic power circuits as replacement for conventional silicon parts due to their attractive properties that include low on-state resistance, high temperature tolerance, and high frequency operation. These attributes have a significant impact by reducing system weight, saving board space, and conserving power. In this work, the performance of an automotive-grade high speed gate driver with potential use in controlling SiC FETs (field-Effect Transistors) in converters or motor control applications was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process.

PubMed

Gao, Ying; Asadirad, Mojtaba; Yao, Yao; Dutta, Pavel; Galstyan, Eduard; Shervin, Shahab; Lee, Keon-Hwa; Pouladi, Sara; Sun, Sicong; Li, Yongkuan; Rathi, Monika; Ryou, Jae-Hyun; Selvamanickam, Venkat

2016-11-02

Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm 2 /V·s and saturation current, I/l W > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs. The Si thin films with a (001) plane grown on a metal tape by a "seed and epitaxy" technique show nearly single-crystalline properties characterized by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and transmission electron microscopy. The realization of flexible and high-performance Si TFTs can establish a new pathway for extended applications of flexible electronics such as amplification and digital circuits, more than currently dominant display switches.

High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

NASA Astrophysics Data System (ADS)

Ahn, Min-Ju; Cho, Won-Ju

2017-10-01

In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

High-Temperature (940 °C) furnace in 18/20 T cold bore magnet

NASA Astrophysics Data System (ADS)

Wang, Ze; Hou, Yubin; Feng, Qiyuan; Dong, Hongliang; Lu, Qingyou

2018-01-01

We present a high-temperature furnace that can work continuously in an 18/20 T cold bore magnet. A specially designed liquid nitrogen (LN2) jacket is between the high-temperature parts of the furnace and the liquid helium in the magnet Dewar. With LN2 serving as the cooling medium, the calculated value of radiation received by the liquid helium (LHe) is as low as 0.004 W. The furnace can be put into LHe Dewar directly. Together with the magnet, the furnace can provide experimental conditions of a strong static magnetic field and temperatures up to 940 °C. A cobalt oxide synthesis in solution was carried out at 200 °C with and without a 15 T magnetic field for 8 h. Differences in material structure with the applied field were observed in transmission electron micrographs of the products. A Co film sample was treated at 900 °C with and without a 6.8 T magnetic field for 30 min. The scanning electron micrographs of the treated samples show that magnetic field had a clear effect on the heat treatment process. These two applications confirmed the performance of the furnace both in high magnetic field and at high temperature.

Search for multipolar instability in URu2Si2 studied by ultrasonic measurements under pulsed magnetic field

NASA Astrophysics Data System (ADS)

Yanagisawa, T.; Mombetsu, S.; Hidaka, H.; Amitsuka, H.; Cong, P. T.; Yasin, S.; Zherlitsyn, S.; Wosnitza, J.; Huang, K.; Kanchanavatee, N.; Janoschek, M.; Maple, M. B.; Aoki, D.

2018-04-01

The elastic properties of URu2Si2 in the high magnetic field region above 40 T, over a wide temperature range from 1.5 to 120 K, were systematically investigated by means of high-frequency ultrasonic measurements. The investigation was performed at high magnetic fields to better investigate the innate bare 5 f -electron properties, since the unidentified electronic thermodynamic phase of unknown origin, the so-called "hidden order" (HO), and associated hybridization of conduction and f electrons (c -f hybridization) are suppressed at high magnetic fields. From the three different transverse modes we find contrasting results; both the Γ4(B2 g) and Γ5(Eg) symmetry modes C66 and C44 show elastic softening that is enhanced above 30 T, while the characteristic softening of the Γ3(B1 g) symmetry mode (C11-C12)/2 is suppressed in high magnetic fields. These results underscore the presence of a hybridization-driven Γ3(B1 g) lattice instability in URu2Si2 . However, the results from this work cannot be explained by using existing crystalline electric field schemes applied to the quadrupolar susceptibility in a local 5 f2 configuration. Instead, we present an analysis based on a band Jahn-Teller effect.

Chemical and biological sensors based on defect-engineered graphene mesh field-effect transistors.

PubMed

Cho, Seunghee H; Kwon, Sun Sang; Yi, Jaeseok; Park, Won Il

2016-01-01

Graphene has been intensively studied for applications to high-performance sensors, but the sensing characteristics of graphene devices have varied from case to case, and the sensing mechanism has not been satisfactorily determined thus far. In this review, we describe recent progress in engineering of the defects in graphene grown by a silica-assisted chemical vapor deposition technique and elucidate the effect of the defects upon the electrical response of graphene sensors. This review provides guidelines for engineering and/or passivating defects to improve sensor performance and reliability.

Highly Sensitive and Reusable Membraneless Field-Effect Transistor (FET)-Type Tungsten Diselenide (WSe2) Biosensors.

PubMed

Lee, Hae Won; Kang, Dong-Ho; Cho, Jeong Ho; Lee, Sungjoo; Jun, Dong-Hwan; Park, Jin-Hong

2018-05-30

In recent years when the demand for high-performance biosensors has been aroused, a field-effect transistor (FET)-type biosensor (BioFET) has attracted great interest because of its high sensitivity, label-free detection, fast detection speed, and miniaturization. However, the insulating membrane in the conventional BioFET, which is essential in preventing the surface dangling bonds of typical semiconductors from nonspecific bindings, has limited the sensitivity of biosensors. Here, we present a highly sensitive and reusable membraneless BioFET based on a defect-free van der Waals material, tungsten diselenide (WSe 2 ). We intentionally generated a few surface defects that serve as extra binding sites for the bioreceptor immobilization through weak oxygen plasma treatment, consequently magnifying the sensitivity values to 2.87 × 10 5 A/A for 10 mM glucose. The WSe 2 BioFET also maintained its high sensitivity even after several cycles of rinsing and glucose application were repeated.

Accounting for the various contributions to pyroelectricity in lead zirconate titanate thin films

NASA Astrophysics Data System (ADS)

Hanrahan, B.; Espinal, Y.; Neville, C.; Rudy, R.; Rivas, M.; Smith, A.; Kesim, M. T.; Alpay, S. P.

2018-03-01

An understanding of the pyroelectric coefficient and particularly its relationship with the applied electric field is critical to predicting the device performance for infrared imaging, energy harvesting, and solid-state cooling devices. In this work, we compare direct measurements of the pyroelectric effect under pulsed heating to the indirect extraction of the pyroelectric coefficient from adiabatic hysteresis loops and predictions from Landau-Devonshire theory for PbZr0.52Ti0.48O3 (PZT 52/48) on platinized silicon substrates. The differences between these measurements are explained through a series of careful measurements that quantify the magnitude and direction of the secondary and field-induced pyroelectric effects. The indirect measurement is shown to be up to 25% of the direct measurement at high fields, while the direct measurements and theoretical predictions converge at high fields as the film approaches a mono-domain state. These measurements highlight the importance of directly measuring the pyroelectric response in thin films, where non-intrinsic effects can be a significant proportion of the total observed pyroelectricity. Material and operating conditions are also discussed which could simultaneously maximize all contributions to pyroelectricity.

Quantum Effects in Cation Interactions with First and Second Coordination Shell Ligands in Metalloproteins

PubMed Central

2015-01-01

Despite decades of investigations, the principal mechanisms responsible for the high affinity and specificity of proteins for key physiological cations K+, Na+, and Ca2+ remain a hotly debated topic. At the core of the debate is an apparent need (or lack thereof) for an accurate description of the electrostatic response of the charge distribution in a protein to the binding of an ion. These effects range from partial electronic polarization of the directly ligating atoms to long-range effects related to partial charge transfer and electronic delocalization effects. While accurate modeling of cation recognition by metalloproteins warrants the use of quantum-mechanics (QM) calculations, the most popular approximations used in major biomolecular simulation packages rely on the implicit modeling of electronic polarization effects. That is, high-level QM computations for ion binding to proteins are desirable, but they are often unfeasible, because of the large size of the reactive-site models and the need to sample conformational space exhaustively at finite temperature. Several solutions to this challenge have been proposed in the field, ranging from the recently developed Drude polarizable force-field for simulations of metalloproteins to approximate tight-binding density functional theory (DFTB). To delineate the usefulness of different approximations, we examined the accuracy of three recent and commonly used theoretical models and numerical algorithms, namely, CHARMM C36, the latest developed Drude polarizable force fields, and DFTB3 with the latest 3OB parameters. We performed MD simulations for 30 cation-selective proteins with high-resolution X-ray structures to create ensembles of structures for analysis with different levels of theory, e.g., additive and polarizable force fields, DFTB3, and DFT. The results from DFT computations were used to benchmark CHARMM C36, Drude, and DFTB3 performance. The explicit modeling of quantum effects unveils the key electrostatic properties of the protein sites and the importance of specific ion-protein interactions. One of the most interesting findings is that secondary coordination shells of proteins are noticeably perturbed in a cation-dependent manner, showing significant delocalization and long-range effects of charge transfer and polarization upon binding Ca2+. PMID:26574284

DOE Office of Scientific and Technical Information (OSTI.GOV)

van den Berg, R.; Brandino, G. P.; El Araby, O.

In this study, we introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free induction decay and spin echo simulations we characterize the combined effect of both types of interactions on the decoherence of the electron spin, for external fields ranging from low to high values. We show that for spin echo simulations the hyperfine interaction is the dominant source of decoherence at short times for low fields, and competes with the dipole-dipole interactions atmore » longer times. On the contrary, at high fields the main source of decay is due to the dipole-dipole interactions. In the latter regime an asymmetry in the echo is observed. Furthermore, the non-decaying fraction previously observed for zero field free induction decay simulations in quantum dots with only hyperfine interactions, is destroyed for longer times by the mean-field treatment of the dipolar interactions.« less

Competing interactions in semiconductor quantum dots

DOE PAGES

van den Berg, R.; Brandino, G. P.; El Araby, O.; ...

2014-10-14

In this study, we introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free induction decay and spin echo simulations we characterize the combined effect of both types of interactions on the decoherence of the electron spin, for external fields ranging from low to high values. We show that for spin echo simulations the hyperfine interaction is the dominant source of decoherence at short times for low fields, and competes with the dipole-dipole interactions atmore » longer times. On the contrary, at high fields the main source of decay is due to the dipole-dipole interactions. In the latter regime an asymmetry in the echo is observed. Furthermore, the non-decaying fraction previously observed for zero field free induction decay simulations in quantum dots with only hyperfine interactions, is destroyed for longer times by the mean-field treatment of the dipolar interactions.« less

An optimized content-aware image retargeting method: toward expanding the perceived visual field of the high-density retinal prosthesis recipients

NASA Astrophysics Data System (ADS)

Li, Heng; Zeng, Yajie; Lu, Zhuofan; Cao, Xiaofei; Su, Xiaofan; Sui, Xiaohong; Wang, Jing; Chai, Xinyu

2018-04-01

Objective. Retinal prosthesis devices have shown great value in restoring some sight for individuals with profoundly impaired vision, but the visual acuity and visual field provided by prostheses greatly limit recipients’ visual experience. In this paper, we employ computer vision approaches to seek to expand the perceptible visual field in patients implanted potentially with a high-density retinal prosthesis while maintaining visual acuity as much as possible. Approach. We propose an optimized content-aware image retargeting method, by introducing salient object detection based on color and intensity-difference contrast, aiming to remap important information of a scene into a small visual field and preserve their original scale as much as possible. It may improve prosthetic recipients’ perceived visual field and aid in performing some visual tasks (e.g. object detection and object recognition). To verify our method, psychophysical experiments, detecting object number and recognizing objects, are conducted under simulated prosthetic vision. As control, we use three other image retargeting techniques, including Cropping, Scaling, and seam-assisted shrinkability. Main results. Results show that our method outperforms in preserving more key features and has significantly higher recognition accuracy in comparison with other three image retargeting methods under the condition of small visual field and low-resolution. Significance. The proposed method is beneficial to expand the perceived visual field of prosthesis recipients and improve their object detection and recognition performance. It suggests that our method may provide an effective option for image processing module in future high-density retinal implants.

Nonlinear electrodynamics of high-temperature superconductors

NASA Astrophysics Data System (ADS)

Zutic, Igor

We investigate the effects of nonlinear electrodynamics in unconventional superconductors. These effects can serve as fingerprints to identify the symmetry of the superconducting pairing state and to provide information about the unknown pairing mechanism in High Temperature Superconductors (HTSC). In the Meissner regime, at low temperatures, a nonlinear magnetic response arises from the presence of lines on the Fermi surface where the superconducting energy gap is very small or zero. This can be used to perform "node spectroscopy", that is, as a sensitive bulk probe to locate the angular position of those lines. We first compute the nonlinear magnetic moment as a function of applied field and geometry, assuming d-wave pairing and anisotropic penetration depth, for realistic finite sample. Our novel, numerically implemented, perturbative procedure exploits the small ratio of the penetration depths to the sample size and substantially reduces the computational work required. We next generalize these considerations to other candidates for the energy gap and to perform node spectroscopy. In calculating the nonlinear supercurrent response, we include the effects of orthorhombic distortion and a-b plane anisotropy. Analytic results presented demonstrate a systematic way to experimentally distinguish order parameters of different symmetries, including cases with mixed symmetry (for example, d+s and s+id). We finally extend our findings to the case of low frequency harmonic magnetic field. The nonlinear magnetic response for various physical quantities generates higher harmonics of the frequency of the applied field. We discuss how examination of the field and angular dependences of these harmonics allows determination of the structure of the energy gap. We show how to distinguish nodes from small minima ("quasinodes"). Gaps with nodal lines give rise to universal power law field dependences for the nonlinear magnetic moment and torque. They both have separable temporal and angular dependences. In contrast, with gap functions which only have quasinodes, these quantities do not display power laws in the applied field, and their temporal and angular dependences are not separable. We discuss how to perform measurements so as to maximize the nonlinear signal, and how to determine the gap function symmetry.

High resolution NMR imaging using a high field yokeless permanent magnet.

PubMed

Kose, Katsumi; Haishi, Tomoyuki

2011-01-01

We measured the homogeneity and stability of the magnetic field of a high field (about 1.04 tesla) yokeless permanent magnet with 40-mm gap for high resolution nuclear magnetic resonance (NMR) imaging. Homogeneity was evaluated using a 3-dimensional (3D) lattice phantom and 3D spin-echo imaging sequences. In the central sphere (20-mm diameter), peak-to-peak magnetic field inhomogeneity was about 60 ppm, and the root-mean-square was 8 ppm. We measured room temperature, magnet temperature, and NMR frequency of the magnet simultaneously every minute for about 68 hours with and without the thermal insulator of the magnet. A simple mathematical model described the magnet's thermal property. Based on magnet performance, we performed high resolution (up to [20 µm](2)) imaging with internal NMR lock sequences of several biological samples. Our results demonstrated the usefulness of the high field small yokeless permanent magnet for high resolution NMR imaging.

Thermal Gradient During Vacuum-Deposition Dramatically Enhances Charge Transport in Organic Semiconductors: Toward High-Performance N-Type Organic Field-Effect Transistors.

PubMed

Kim, Joo-Hyun; Han, Singu; Jeong, Heejeong; Jang, Hayeong; Baek, Seolhee; Hu, Junbeom; Lee, Myungkyun; Choi, Byungwoo; Lee, Hwa Sung

2017-03-22

A thermal gradient distribution was applied to a substrate during the growth of a vacuum-deposited n-type organic semiconductor (OSC) film prepared from N,N'-bis(2-ethylhexyl)-1,7-dicyanoperylene-3,4:9,10-bis(dicarboxyimide) (PDI-CN2), and the electrical performances of the films deployed in organic field-effect transistors (OFETs) were characterized. The temperature gradient at the surface was controlled by tilting the substrate, which varied the temperature one-dimensionally between the heated bottom substrate and the cooled upper substrate. The vacuum-deposited OSC molecules diffused and rearranged on the surface according to the substrate temperature gradient, producing directional crystalline and grain structures in the PDI-CN2 film. The morphological and crystalline structures of the PDI-CN2 thin films grown under a vertical temperature gradient were dramatically enhanced, comparing with the structures obtained from either uniformly heated films or films prepared under a horizontally applied temperature gradient. The field effect mobilities of the PDI-CN2-FETs prepared using the vertically applied temperature gradient were as high as 0.59 cm 2 V -1 s -1 , more than a factor of 2 higher than the mobility of 0.25 cm 2 V -1 s -1 submitted to conventional thermal annealing and the mobility of 0.29 cm 2 V -1 s -1 from the horizontally applied temperature gradient.

Redox flow batteries with serpentine flow fields: Distributions of electrolyte flow reactant penetration into the porous carbon electrodes and effects on performance

NASA Astrophysics Data System (ADS)

Ke, Xinyou; Prahl, Joseph M.; Alexander, J. Iwan D.; Savinell, Robert F.

2018-04-01

Redox flow batteries with flow field designs have been demonstrated to boost their capacities to deliver high current density and power density in medium and large-scale energy storage applications. Nevertheless, the fundamental mechanisms involved with improved current density in flow batteries with serpentine flow field designs have been not fully understood. Here we report a three-dimensional model of a serpentine flow field over a porous carbon electrode to examine the distributions of pressure driven electrolyte flow penetrations into the porous carbon electrodes. We also estimate the maximum current densities associated with stoichiometric availability of electrolyte reactant flow penetrations through the porous carbon electrodes. The results predict reasonably well observed experimental data without using any adjustable parameters. This fundamental work on electrolyte flow distributions of limiting reactant availability will contribute to a better understanding of limits on electrochemical performance in flow batteries with serpentine flow field designs and should be helpful to optimizing flow batteries.

Could Magnetic Fields Affect the Circadian Clock Function of Cryptochromes? Testing the Basic Premise of the Cryptochrome Hypothesis (ELF Magnetic Fields).

PubMed

Vanderstraeten, Jacques; Burda, Hynek; Verschaeve, Luc; De Brouwer, Christophe

2015-07-01

It has been suggested that weak 50/60 Hz [extremely low frequency (ELF)] magnetic fields (MF) could affect circadian biorhythms by disrupting the clock function of cryptochromes (the "cryptochrome hypothesis," currently under study). That hypothesis is based on the premise that weak (Earth strength) static magnetic fields affect the redox balance of cryptochromes, thus possibly their signaling state as well. An appropriate method for testing this postulate could be real time or short-term study of the circadian clock function of retinal cryptochromes under exposure to the static field intensities that elicit the largest redox changes (maximal "low field" and "high field" effects, respectively) compared to zero field. Positive results might encourage further study of the cryptochrome hypothesis itself. However, they would indicate the need for performing a similar study, this time comparing the effects of only slight intensity changes (low field range) in order to explore the possible role of the proximity of metal structures and furniture as a confounder under the cryptochrome hypothesis.

Partial homogeneity based high-resolution nuclear magnetic resonance spectra under inhomogeneous magnetic fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei, Zhiliang; Lin, Liangjie; Lin, Yanqin, E-mail: linyq@xmu.edu.cn, E-mail: chenz@xmu.edu.cn

2014-09-29

In nuclear magnetic resonance (NMR) technique, it is of great necessity and importance to obtain high-resolution spectra, especially under inhomogeneous magnetic fields. In this study, a method based on partial homogeneity is proposed for retrieving high-resolution one-dimensional NMR spectra under inhomogeneous fields. Signals from series of small voxels, which characterize high resolution due to small sizes, are recorded simultaneously. Then, an inhomogeneity correction algorithm is developed based on pattern recognition to correct the influence brought by field inhomogeneity automatically, thus yielding high-resolution information. Experiments on chemical solutions and fish spawn were carried out to demonstrate the performance of the proposedmore » method. The proposed method serves as a single radiofrequency pulse high-resolution NMR spectroscopy under inhomogeneous fields and may provide an alternative of obtaining high-resolution spectra of in vivo living systems or chemical-reaction systems, where performances of conventional techniques are usually degenerated by field inhomogeneity.« less

Crew behavior and performance in space analog environments

NASA Technical Reports Server (NTRS)

Kanki, Barbara G.

1992-01-01

The objectives and the current status of the Crew Factors research program conducted at NASA-Ames Research Center are reviewed. The principal objectives of the program are to determine the effects of a broad class of input variables on crew performance and to provide guidance with respect to the design and management of crews assigned to future space missions. A wide range of research environments are utilized, including controlled experimental settings, high fidelity full mission simulator facilities, and fully operational field environments. Key group processes are identified, and preliminary data are presented on the effect of crew size, type, and structure on team performance.

Field experiences with rotordynamic instability in high-performance turbomachinery. [oil and natural gas recovery

NASA Technical Reports Server (NTRS)

Doyle, H. E.

1980-01-01

Two field situations illustrate the consequences of rotordynamic instability in centrifugal compressors. One involves the reinjection of produced gas into a North Sea oil formation for the temporary extraction of crude. The other describes on-shore compressors used to deliver natural gas from off-shore wells. The problems which developed and the remedies attempted in each case are discussed. Instability problems resulted in lost production, extended construction periods and costs, and heavy maintenance expenditures. The need for effective methods to properly identify the problem in the field and in the compressor design stage is emphasized.

DC and analog/RF performance optimisation of source pocket dual work function TFET

NASA Astrophysics Data System (ADS)

Raad, Bhagwan Ram; Sharma, Dheeraj; Kondekar, Pravin; Nigam, Kaushal; Baronia, Sagar

2017-12-01

We investigate a systematic study of source pocket tunnel field-effect transistor (SP TFET) with dual work function of single gate material by using uniform and Gaussian doping profile in the drain region for ultra-low power high frequency high speed applications. For this, a n+ doped region is created near the source/channel junction to decrease the depletion width results in improvement of ON-state current. However, the dual work function of the double gate is used for enhancement of the device performance in terms of DC and analog/RF parameters. Further, to improve the high frequency performance of the device, Gaussian doping profile is considered in the drain region with different characteristic lengths which decreases the gate to drain capacitance and leads to drastic improvement in analog/RF figures of merit. Furthermore, the optimisation is performed with different concentrations for uniform and Gaussian drain doping profile and for various sectional length of lower work function of the gate electrode. Finally, the effect of temperature variation on the device performance is demonstrated.

Rapid Microfluidic Mixers Utilizing Dispersion Effect and Interactively Time-Pulsed Injection

NASA Astrophysics Data System (ADS)

Leong, Jik-Chang; Tsai, Chien-Hsiung; Chang, Chin-Lung; Lin, Chiu-Feng; Fu, Lung-Ming

2007-08-01

In this paper, we present a novel active microfluidic mixer utilizing a dispersion effect in an expansion chamber and applying interactively time-pulsed driving voltages to the respective inlet fluid flows to induce electroosmotic flow velocity variations for developing a rapid mixing effect in a microchannel. Without using any additional equipment to induce flow perturbations, only a single high-voltage power source is required for simultaneously driving and mixing sample fluids, which results in a simple and low-cost system for mixing. The effects of the applied main electrical field, interactive frequency, and expansion ratio on the mixing performance are thoroughly examined experimentally and numerically. The mixing ratio can be as high as 95% within a mixing length of 3000 μm downstream from the secondary T-form when a driving electric field strength of 250 V/cm, a periodic switching frequency of 5 Hz, and the expansion ratio M=1:10 are applied. In addition, the optimization of the driving electric field, switching frequency, expansion ratio, expansion entry length, and expansion chamber length for achieving a maximum mixing ratio is also discussed in this study. The novel method proposed in this study can be used for solving the mixing problem in the field of micro-total-analysis systems in a simple manner.

Heterotic patterns in rapeseed (Brassica napus L.): I. Crosses between spring and Chinese semi-winter lines.

PubMed

Qian, W; Sass, O; Meng, J; Li, M; Frauen, M; Jung, C

2007-06-01

Chinese semi-winter rapeseed is genetically diverse from Canadian and European spring rapeseed. This study was conducted to evaluate the potential of semi-winter rapeseed for spring rapeseed hybrid breeding, to assess the genetic effects involved, and to estimate the correlation of parental genetic distance (GD) with hybrid performance, heterosis, general combining ability (GCA) and specific combining ability (SCA) in crosses between spring and semi-winter rapeseed lines. Four spring male sterile lines from Germany and Canada as testers were crossed with 13 Chinese semi-winter rapeseed lines to develop 52 hybrids, which were evaluated together with their parents and commercial hybrids for seed yield and oil content in three sets of field trials with 8 environments in Canada and Europe. The Chinese parental lines were not adapted to local environmental conditions as demonstrated by poor seed yields per se. However, the hybrids between the Chinese parents and the adapted spring rapeseed lines exhibited high heterosis for seed yield. The average mid-parent heterosis was 15% and ca. 50% of the hybrids were superior to the respective hybrid control across three sets of field trials. Additive gene effects mainly contributed to hybrid performance since the mean squares of GCA were higher as compared to SCA. The correlation between parental GD and hybrid performance and heterosis was found to be low whereas the correlation between GCA((f + m)) and hybrid performance was high and significant in each set of field trials, with an average of r = 0.87 for seed yield and r = 0.89 for oil content, indicating that hybrid performance can be predicted by GCA((f + m)). These results demonstrate that Chinese semi-winter rapeseed germplasm has a great potential to increase seed yield in spring rapeseed hybrid breeding programs in Canada and Europe.

High performance n-channel thin-film transistors with an amorphous phase C60 film on plastic substrate

NASA Astrophysics Data System (ADS)

Na, Jong H.; Kitamura, M.; Arakawa, Y.

2007-11-01

We fabricated high mobility, low voltage n-channel transistors on plastic substrates by combining an amorphous phase C60 film and a high dielectric constant gate insulator titanium silicon oxide (TiSiO2). The transistors exhibited high performance with a threshold voltage of 1.13V, an inverse subthreshold swing of 252mV/decade, and a field-effect mobility up to 1cm2/Vs at an operating voltage as low as 5V. The amorphous phase C60 films can be formed at room temperature, implying that this transistor is suitable for corresponding n-channel transistors in flexible organic logic devices.

Electro-aerodynamic field aided needleless electrospinning.

PubMed

Yan, Guilong; Niu, Haitao; Zhou, Hua; Wang, Hongxia; Shao, Hao; Zhao, Xueting; Lin, Tong

2018-06-08

Auxiliary fields have been used to enhance the performance of needle electrospinning. However, much less has been reported on how auxiliary fields affect needleless electrospinning. Herein, we report a novel needleless electrospinning technique that consists of an aerodynamic field and a second electric field. The second electric field is generated by setting two grounded inductive electrodes near the spinneret. The two auxiliary fields have to be applied simultaneously to ensure working of the electrospinning process. A synergistic effect was observed between inductive electrode and airflow. The aerodynamic-electric auxiliary field was found to significantly increase fiber production rate (4.5 g h -1 ), by 350% in comparison to the setup without auxiliary field (1.0 g h -1 ), whereas it had little effect on fiber diameter. The auxiliary fields allow running needleless electrospinning at an applied voltage equivalent to that in needle electrospinning (e.g. 10-30 kV). The finite element analyses of electric field and airflow field verify that the inductive electrodes increase electric field strength near the spinneret, and the airflow assists in fiber deposition. This novel needleless electrospinning may be useful for development of high-efficiency, low energy-consumption nanofiber production systems.

Electro-aerodynamic field aided needleless electrospinning

NASA Astrophysics Data System (ADS)

Yan, Guilong; Niu, Haitao; Zhou, Hua; Wang, Hongxia; Shao, Hao; Zhao, Xueting; Lin, Tong

2018-06-01

Auxiliary fields have been used to enhance the performance of needle electrospinning. However, much less has been reported on how auxiliary fields affect needleless electrospinning. Herein, we report a novel needleless electrospinning technique that consists of an aerodynamic field and a second electric field. The second electric field is generated by setting two grounded inductive electrodes near the spinneret. The two auxiliary fields have to be applied simultaneously to ensure working of the electrospinning process. A synergistic effect was observed between inductive electrode and airflow. The aerodynamic-electric auxiliary field was found to significantly increase fiber production rate (4.5 g h‑1), by 350% in comparison to the setup without auxiliary field (1.0 g h‑1), whereas it had little effect on fiber diameter. The auxiliary fields allow running needleless electrospinning at an applied voltage equivalent to that in needle electrospinning (e.g. 10–30 kV). The finite element analyses of electric field and airflow field verify that the inductive electrodes increase electric field strength near the spinneret, and the airflow assists in fiber deposition. This novel needleless electrospinning may be useful for development of high-efficiency, low energy-consumption nanofiber production systems.

Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Djara, V.; Cherkaoui, K.; Negara, M. A.

2015-11-28

An alternative multi-frequency inversion-charge pumping (MFICP) technique was developed to directly separate the inversion charge density (N{sub inv}) from the trapped charge density in high-k/InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs). This approach relies on the fitting of the frequency response of border traps, obtained from inversion-charge pumping measurements performed over a wide range of frequencies at room temperature on a single MOSFET, using a modified charge trapping model. The obtained model yielded the capture time constant and density of border traps located at energy levels aligned with the InGaAs conduction band. Moreover, the combination of MFICP and pulsed I{sub d}-V{sub g}more » measurements enabled an accurate effective mobility vs N{sub inv} extraction and analysis. The data obtained using the MFICP approach are consistent with the most recent reports on high-k/InGaAs.« less

Structural-Thermal-Optical-Performance (STOP) Model Development and Analysis of a Field-widened Michelson Interferometer

NASA Technical Reports Server (NTRS)

Scola, Salvatore J.; Osmundsen, James F.; Murchison, Luke S.; Davis, Warren T.; Fody, Joshua M.; Boyer, Charles M.; Cook, Anthony L.; Hostetler, Chris A.; Seaman, Shane T.; Miller, Ian J.;

Multipactor Discharge in High Power Microwave Systems: Analyzing Effects and Mitigation through Simulation in ICEPIC

DTIC Science & Technology

2013-03-01

weapons, 2012. Private Communication. 22. A. Valfells, H.P. Verboncoeur, and Y.Y. Lau. Space - charge effects on multipactor dielectric . Plasma Science...when space charge effects are omitted modeled particles have no associated fields and when emitted from the dielectric do not have leave behind a...Experimental research performed at Texas Tech [16] showed that space charge must be included to properly characterize the multipactor evolution [22

Spearhead Nanometric Field-Effect Transistor Sensors for Single-Cell Analysis.

PubMed

Zhang, Yanjun; Clausmeyer, Jan; Babakinejad, Babak; Córdoba, Ainara López; Ali, Tayyibah; Shevchuk, Andrew; Takahashi, Yasufumi; Novak, Pavel; Edwards, Christopher; Lab, Max; Gopal, Sahana; Chiappini, Ciro; Anand, Uma; Magnani, Luca; Coombes, R Charles; Gorelik, Julia; Matsue, Tomokazu; Schuhmann, Wolfgang; Klenerman, David; Sviderskaya, Elena V; Korchev, Yuri

2016-03-22

Nanometric field-effect-transistor (FET) sensors are made on the tip of spear-shaped dual carbon nanoelectrodes derived from carbon deposition inside double-barrel nanopipettes. The easy fabrication route allows deposition of semiconductors or conducting polymers to comprise the transistor channel. A channel from electrodeposited poly pyrrole (PPy) exhibits high sensitivity toward pH changes. This property is exploited by immobilizing hexokinase on PPy nano-FETs to give rise to a selective ATP biosensor. Extracellular pH and ATP gradients are key biochemical constituents in the microenvironment of living cells; we monitor their real-time changes in relation to cancer cells and cardiomyocytes. The highly localized detection is possible because of the high aspect ratio and the spear-like design of the nano-FET probes. The accurately positioned nano-FET sensors can detect concentration gradients in three-dimensional space, identify biochemical properties of a single living cell, and after cell membrane penetration perform intracellular measurements.

Spearhead Nanometric Field-Effect Transistor Sensors for Single-Cell Analysis

PubMed Central

Córdoba, Ainara López; Ali, Tayyibah; Shevchuk, Andrew; Takahashi, Yasufumi; Novak, Pavel; Edwards, Christopher; Lab, Max; Gopal, Sahana; Chiappini, Ciro; Anand, Uma; Magnani, Luca; Coombes, R. Charles; Gorelik, Julia; Matsue, Tomokazu; Schuhmann, Wolfgang; Klenerman, David; Sviderskaya, Elena V.; Korchev, Yuri

2016-01-01

Nanometric field-effect-transistor (FET) sensors are made on the tip of spear-shaped dual carbon nanoelectrodes derived from carbon deposition inside double-barrel nanopipettes. The easy fabrication route allows deposition of semiconductors or conducting polymers to comprise the transistor channel. A channel from electrodeposited poly pyrrole (PPy) exhibits high sensitivity toward pH changes. This property is exploited by immobilizing hexokinase on PPy nano-FETs to give rise to a selective ATP biosensor. Extracellular pH and ATP gradients are key biochemical constituents in the microenvironment of living cells; we monitor their real-time changes in relation to cancer cells and cardiomyocytes. The highly localized detection is possible because of the high aspect ratio and the spear-like design of the nano-FET probes. The accurately positioned nano-FET sensors can detect concentration gradients in three-dimensional space, identify biochemical properties of a single living cell, and after cell membrane penetration perform intracellular measurements. PMID:26816294

Electron density window for best frequency performance, lowest phase noise and slowest degradation of GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Matulionis, Arvydas

2013-07-01

The problems in the realm of nitride heterostructure field-effect transistors (HFETs) are discussed in terms of a novel fluctuation-dissipation-based approach impelled by a recent demonstration of strong correlation of hot-electron fluctuations with frequency performance and degradation of the devices. The correlation has its genesis in the dissipation of the LO-mode heat accumulated by the non-equilibrium longitudinal optical phonons (hot phonons) confined in the channel that hosts the high-density hot-electron gas subjected to a high electric field. The LO-mode heat causes additional scattering of hot electrons and facilitates defect formation in a different manner than the conventional heat contained mainly in the acoustic phonon mode. We treat the heat dissipation problem in terms of the hot-phonon lifetime responsible for the conversion of the non-migrant hot phonons into migrant acoustic modes and other vibrations. The lifetime is measured over a wide range of electron density and supplied electric power. The optimal conditions for the dissipation of the LO-mode heat are associated with the plasmon-assisted disintegration of hot phonons. Signatures of plasmons are experimentally resolved in fluctuations, dissipation, hot-electron transport, transistor frequency performance, transistor phase noise and transistor reliability. In particular, a slower degradation and a faster operation of GaN-based HFETs take place inside the electron density window where the resonant plasmon-assisted ultrafast dissipation of the LO-mode heat comes into play. A novel heterostructure design for the possible improvement of HFET performance is proposed, implemented and tested.

Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators

PubMed

Dimitrakopoulos; Purushothaman; Kymissis; Callegari; Shaw

1999-02-05

The gate bias dependence of the field-effect mobility in pentacene-based insulated gate field-effect transistors (IGFETs) was interpreted on the basis of the interaction of charge carriers with localized trap levels in the band gap. This understanding was used to design and fabricate IGFETs with mobility of more than 0.3 square centimeter per volt per second and current modulation of 10(5), with the use of amorphous metal oxide gate insulators. These values were obtained at operating voltage ranges as low as 5 volts, which are much smaller than previously reported results. An all-room-temperature fabrication process sequence was used, which enabled the demonstration of high-performance organic IGFETs on transparent plastic substrates, at low operating voltages for organic devices.

Effects of microstructural defects on the performance of base-metal multilayer ceramic capacitors

NASA Astrophysics Data System (ADS)

Samantaray, Malay M.

Multilayer ceramic capacitors (MLCCs), owing to their processing conditions, can exhibit microstructure defects such as electrode porosity and roughness. The effect of such extrinsic defects on the electrical performance of these devices needs to be understood in order to achieve successful miniaturization into the submicron dielectric layer thickness regime. Specifically, the presence of non-planar and discontinuous electrodes can lead to local field enhancements while the relative morphologies of two adjacent electrodes determine variations in the local dielectric thickness. To study the effects of electrode morphologies, an analytical approach is taken to calculate the electric field enhancement and leakage current with respect to an ideal parallel-plate capacitor. Idealized electrode defects are used to simulate the electric field distribution. It is shown that the electrode roughness causes both the electric field and the leakage current to increase with respect to that of the ideal flat parallel-plate capacitor. Moreover, finite element methods are used to predict electric field enhancements by as high as 100% within capacitor structures containing rough interfaces and porosity. To understand the influence of microstructural defects on field distributions and leakage current, the real three-dimensional microstructure of local regions in MLCCs are reconstructed using a serial-sectioning technique in the focused ion beam. These microstructures are then converted into a finite element model in order to simulate the perturbations in electric field due to the presence of electrode defects. The electric field is three times the average value, and this leads to increase in current density of these devices. It is also shown that increasing sintering rates of MLCCs leads to improved electrode morphology with smoother more continuous electrodes, which in turn leads to a decrease in electric field enhancement and calculated leakage current density. To simulate scaling effects, the dielectric layer thickness is reduced from 2.0mum to 0.5mum in the three-dimensional microstructure keeping the same electrode morphology. It is seen that the effect of microstructure defects is more pronounced as one approaches thinner layers, leading to higher local electric field concentrations and a concomitant drop in insulation resistance. It is also seen that the electric field values are as high as 3.8 times the average field in termination regions due the disintegrated structure of the electrodes. In order to assess the effect of microstructure on MLCC performance, two sets of multilayer capacitors subjected to two vastly different sintering rates of 150ºC/hr and 3000ºC/hr are compared for their electrical properties. Capacitors with higher electrode continuity exhibit proportionally higher capacitance, provided the grain size distributions are similar. From the leakage current measurements, it is found that the Schottky barrier at the electrode-dielectric interface controls the conduction mechanism. This barrier height is calculated to be 1.06 eV for slow-fired MLCCs and was 1.15 for fast-fired MLCCs. This shows that high concentration of electrode defects cause field perturbations and subsequent drop in the net Schottky barrier height. These results are further supported by frequency-dependent impedance measurements. With temperature dependence behavior of current-voltage trends we note that below temperatures of 135°C, the conduction is controlled by interfacial effects, whereas at higher temperatures it is consistent with bulk-controlled space charge limited current for the samples that are highly reoxidized. The final part of this work studies the various aspects of the initial stages of degradation of MLCCs. MLCCs subjected to unipolar and bipolar degradation are studied for changes in microstructure and electrical properties. With bipolar degradation studies new insights into degradation are gained. First, the ionic accumulation with oxygen vacancies at cathodes is only partially reversible. This has implications on the controlling interface with electronic conduction. Also, it is shown that oxygen vacancy accumulation near the cathodes leads to a drop in insulation resistance. The capacitance also increases with progressive steps of degradation due to the effective thinning of dielectric layer. The reduction in interfacial resistance is also confirmed by impedance analysis. Finally, it is observed that on degradation, the dominant leakage current mechanism changes from being controlled by cathodic injection of electrons to being controlled by their anodic extraction. (Abstract shortened by UMI.)

Influence of the magnetic field profile on ITER conductor testing

NASA Astrophysics Data System (ADS)

Nijhuis, A.; Ilyin, Y.; ten Kate, H. H. J.

2006-08-01

We performed simulations with the numerical CUDI-CICC code on a typical short ITER (International Thermonuclear Experimental Reactor) conductor test sample of dual leg configuration, as usually tested in the SULTAN test facility, and made a comparison with the new EFDA-Dipole test facility offering a larger applied DC field region. The new EFDA-Dipole test facility, designed for short sample testing of conductors for ITER, has a homogeneous high field region of 1.2 m, while in the SULTAN facility this region is three times shorter. The inevitable non-uniformity of the current distribution in the cable, introduced by the joints at both ends, has a degrading effect on voltage-current (VI) and voltage-temperature (VT) characteristics, particularly for these short samples. This can easily result in an underestimation or overestimation of the actual conductor performance. A longer applied DC high field region along a conductor suppresses the current non-uniformity by increasing the overall longitudinal cable electric field when reaching the current sharing mode. The numerical interpretation study presented here gives a quantitative analysis for a relevant practical case of a test of a short sample poloidal field coil insert (PFCI) conductor in SULTAN. The simulation includes the results of current distribution analysis from self-field measurements with Hall sensor arrays, current sharing measurements and inter-petal resistance measurements. The outcome of the simulations confirms that the current uniformity improves with a longer high field region but the 'measured' VI transition is barely affected, though the local peak voltages become somewhat suppressed. It appears that the location of the high field region and voltage taps has practically no influence on the VI curve as long as the transverse voltage components are adequately cancelled. In particular, for a thin conduit wall, the voltage taps should be connected to the conduit in the form of an (open) azimuthally soldered wire, averaging the transverse conduit surface potentials initiated in the joints.

NovoTTF™-100A System (Tumor Treating Fields) transducer array layout planning for glioblastoma: a NovoTAL™ system user study.

PubMed

Chaudhry, Aafia; Benson, Laura; Varshaver, Michael; Farber, Ori; Weinberg, Uri; Kirson, Eilon; Palti, Yoram

2015-11-11

Optune™, previously known as the NovoTTF-100A System™, generates Tumor Treating Fields (TTFields), an effective anti-mitotic therapy for glioblastoma. The system delivers intermediate frequency, alternating electric fields to the supratentorial brain. Patient therapy is personalized by configuring transducer array layout placement on the scalp to the tumor site using MRI measurements and the NovoTAL System. Transducer array layout mapping optimizes therapy by maximizing electric field intensity to the tumor site. This study evaluated physician performance in conducting transducer array layout mapping using the NovoTAL System compared with mapping performed by the Novocure in-house clinical team. Fourteen physicians (7 neuro-oncologists, 4 medical oncologists, and 3 neurosurgeons) evaluated five blinded cases of recurrent glioblastoma and performed head size and tumor location measurements using a standard Digital Imaging and Communications in Medicine reader. Concordance with Novocure measurement and intra- and inter-rater reliability were assessed using relevant correlation coefficients. The study criterion for success was a concordance correlation coefficient (CCC) >0.80. CCC for each physician versus Novocure on 20 MRI measurements was 0.96 (standard deviation, SD ± 0.03, range 0.90-1.00), indicating very high agreement between the two groups. Intra- and inter-rater reliability correlation coefficients were similarly high: 0.83 (SD ±0.15, range 0.54-1.00) and 0.80 (SD ±0.18, range 0.48-1.00), respectively. This user study demonstrated an excellent level of concordance between prescribing physicians and Novocure in-house clinical teams in performing transducer array layout planning. Intra-rater reliability was very high, indicating reproducible performance. Physicians prescribing TTFields, when trained on the NovoTAL System, can independently perform transducer array layout mapping required for the initiation and maintenance of patients on TTFields therapy.

A 2 Tesla Full Scale High Performance Periodic Permanent Magnet Model for Attractive (228 KN) and repulsive Maglev

NASA Technical Reports Server (NTRS)

Stekly, Z. J. J.; Gardner, C.; Domigan, P.; Baker, J.; Hass, M.; McDonald, C.; Wu, C.; Farrell, R. A.

1996-01-01

Two 214.5 cm. long high performance periodic (26 cm period) permanent magnet half-assemblies were designed and constructed for use as a wiggler using Nd-B-Fe and vanadium permendur as hard and soft magnetic materials by Field Effects, a division of Intermagnetics General Corporation. Placing these assemblies in a supporting structure with a 2.1 cm pole to pole separation resulted in a periodic field with a maximum value of 2.04 T. This is believed to be the highest field ever achieved by this type of device. The attractive force between the two 602 kg magnet assemblies is 228 kN, providing enough force for suspension of a 45,500 kg vehicle. If used in an attractive maglev system with an appropriate flat iron rail, one assembly will generate the same force with a gap of 1.05 cm leading to a lift to weight ratio of 38.6, not including the vehicle attachment structure. This permanent magnet compares well with superconducting systems which have lift to weight ratios in the range of 5 to 10. This paper describes the magnet assemblies and their measured magnetic performance. The measured magnetic field and resulting attractive magnetic force have a negative spring characteristic. Appropriate control coils are necessary to provide stable operation. The estimated performance of the assemblies in a stable repulsive mode, with eddy currents in a conducting guideway, is also discussed.

An application of eddy current damping effect on single point diamond turning of titanium alloys

NASA Astrophysics Data System (ADS)

Yip, W. S.; To, S.

2017-11-01

Titanium alloys Ti6Al4V (TC4) have been popularly applied in many industries. They have superior material properties including an excellent strength-to-weight ratio and corrosion resistance. However, they are regarded as difficult to cut materials; serious tool wear, a high level of cutting vibration and low surface integrity are always involved in machining processes especially in ultra-precision machining (UPM). In this paper, a novel hybrid machining technology using an eddy current damping effect is firstly introduced in UPM to suppress machining vibration and improve the machining performance of titanium alloys. A magnetic field was superimposed on samples during single point diamond turning (SPDT) by exposing the samples in between two permanent magnets. When the titanium alloys were rotated within a magnetic field in the SPDT, an eddy current was generated through a stationary magnetic field inside the titanium alloys. An eddy current generated its own magnetic field with the opposite direction of the external magnetic field leading a repulsive force, compensating for the machining vibration induced by the turning process. The experimental results showed a remarkable improvement in cutting force variation, a significant reduction in adhesive tool wear and an extreme long chip formation in comparison to normal SPDT of titanium alloys, suggesting the enhancement of the machinability of titanium alloys using an eddy current damping effect. An eddy current damping effect was firstly introduced in the area of UPM to deliver the results of outstanding machining performance.

3D modeling of dual-gate FinFET.

PubMed

Mil'shtein, Samson; Devarakonda, Lalitha; Zanchi, Brian; Palma, John

2012-11-13

The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the enhanced control, performance trends of all FETs are still challenged by carrier mobility dependence on the strengths of the electrical field along the channel. However, in cases when the ratio of FinFET volume to its surface dramatically decreases, one should carefully consider the surface boundary conditions of the device. Moreover, the inherent non-planar nature of a FinFET demands 3D modeling for accurate analysis of the device performance. Using the Silvaco modeling tool with quantization effects, we modeled a physical FinFET described in the work of Hisamoto et al. (IEEE Tran. Elec. Devices 47:12, 2000) in 3D. We compared it with a 2D model of the same device. We demonstrated that 3D modeling produces more accurate results. As 3D modeling results came close to experimental measurements, we made the next step of the study by designing a dual-gate FinFET biased at Vg1 >Vg2. It is shown that the dual-gate FinFET carries higher transconductance than the single-gate device.

3D modeling of dual-gate FinFET

NASA Astrophysics Data System (ADS)

Mil'shtein, Samson; Devarakonda, Lalitha; Zanchi, Brian; Palma, John

2012-11-01

The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the enhanced control, performance trends of all FETs are still challenged by carrier mobility dependence on the strengths of the electrical field along the channel. However, in cases when the ratio of FinFET volume to its surface dramatically decreases, one should carefully consider the surface boundary conditions of the device. Moreover, the inherent non-planar nature of a FinFET demands 3D modeling for accurate analysis of the device performance. Using the Silvaco modeling tool with quantization effects, we modeled a physical FinFET described in the work of Hisamoto et al. (IEEE Tran. Elec. Devices 47:12, 2000) in 3D. We compared it with a 2D model of the same device. We demonstrated that 3D modeling produces more accurate results. As 3D modeling results came close to experimental measurements, we made the next step of the study by designing a dual-gate FinFET biased at V g1 > V g2. It is shown that the dual-gate FinFET carries higher transconductance than the single-gate device.

Physiologic performance test differences in female volleyball athletes by competition level and player position.

PubMed

Schaal, Monique; Ransdell, Lynda B; Simonson, Shawn R; Gao, Yong

2013-07-01

The purpose of this study was to examine physiologic performance test differences by competition level (high school and Division-I collegiate athletes) and player position (hitter, setter, defensive specialist) in 4 volleyball-related tests. A secondary purpose was to establish whether a 150-yd shuttle could be used as a field test to assess anaerobic capacity. Female participants from 4 varsity high school volleyball teams (n = 27) and 2 Division-I collegiate volleyball teams (n = 26) were recruited for the study. Participants completed 4 performance-based field tests (vertical jump, agility T-test, and 150- and 300-yd shuttle runs) after completing a standardized dynamic warm-up. A 2-way multivariate analysis of variance with Bonferroni post hoc adjustments (when appropriate) and effect sizes were used for the analyses. The most important findings of this study were that (a) college volleyball athletes were older, heavier, and taller than high school athletes; (b) high school athletes had performance deficiencies in vertical jump/lower-body power, agility, and anaerobic fitness; (c) lower-body power was the only statistically significant difference in the performance test measures by player position; and (d) the correlation between the 150- and 300-yd shuttle was moderate (r = 0.488). Female high school volleyball players may enhance their ability to play collegiate volleyball by improving their vertical jump, lower-body power, agility, and anaerobic fitness. Furthermore, all player positions should emphasize lower-body power conditioning. These physical test scores provide baseline performance scores that should help strength and conditioning coaches create programs that will address deficits in female volleyball player performance, especially as they transition from high school to college.

Study of runaway electrons using the conditional average sampling method in the Damavand tokamak

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pourshahab, B., E-mail: bpourshahab@gmail.com; Sadighzadeh, A.; Abdi, M. R., E-mail: r.abdi@phys.ui.ac.ir

2017-03-15

Some experiments for studying the runaway electron (RE) effects have been performed using the poloidal magnetic probes system installed around the plasma column in the Damavand tokamak. In these experiments, the so-called runaway-dominated discharges were considered in which the main part of the plasma current is carried by REs. The induced magnetic effects on the poloidal pickup coils signals are observed simultaneously with the Parail–Pogutse instability moments for REs and hard X-ray bursts. The output signals of all diagnostic systems enter the data acquisition system with 2 Msample/(s channel) sampling rate. The temporal evolution of the diagnostic signals is analyzedmore » by the conditional average sampling (CAS) technique. The CASed profiles indicate RE collisions with the high-field-side plasma facing components at the instability moments. The investigation has been carried out for two discharge modes—low-toroidal-field (LTF) and high-toroidal-field (HTF) ones—related to both up and down limits of the toroidal magnetic field in the Damavand tokamak and their comparison has shown that the RE confinement is better in HTF discharges.« less

Carbon-Based Nanostructures as Advanced Contrast Agents for Magnetic Resonance Imaging

NASA Astrophysics Data System (ADS)

Ananta Narayanan, Jeyarama S.

2011-12-01

Superparamagnetic carbon-based nanostructures are presented as contrast agents (CAs) for advanced imaging applications such as cellular and molecular imaging using magnetic resonance imaging (MRI). Gadolinium-loaded, ultra-short single-walled carbon nanotubes (gadonanotubes; GNTs) are shown to have extremely high r1 relaxivities (contrast enhancement efficacy), especially at low-magnetic field strengths. The inherent lipophilicity of GNTs provides them the ability to image cells at low magnetic field strength. A carboxylated dextran-coated GNT (GadoDex) has been synthesized and proposed as a new biocompatible high-performance MRI CA. The r1 relaxivity is ca. 20 times greater than for other paramagnetic Gd-based CAs. This enhanced relaxivity for GadoDex is due to the synergistic effects of an increased molecular tumbling time (tauR) and a faster proton exchange rate (taum). GNTs also exhibit very large transverse relaxivities (r2) at high magnetic fields (≥ 3 T). The dependence of the transverse relaxation rates (especially R2*) of labeled cells on GNT concentration offers the possibility to quantify cell population in vivo using R2* mapping. The cell-labeling efficiency and high transverse relaxivities of GNTs has enabled the first non-iron oxide-based single-cell imaging using MRI. The residual metal catalyst particles of SWNT materials also have transverse relaxation properties. All of the SWNT materials exhibit superior transverse relaxation properties. However, purified SWNTs and US-tubes with less residual metal content exhibit better transverse relaxivities (r2), demonstrating the importance of the SWNT structure for enhanced MRI CA performance. A strategy to improve the r1 relaxivity of Gd-CAs by geometrically confining them within porous silicon particles (SiMPs) has been investigated. The enhancement in relaxivity is attributed to the slow diffusion of water molecules through the pores and the increase in the molecular tumbling time of the nanoconstruct. The universality of the strategy has been demonstrated for GNTs, gadofullerols and clinically-used MagnevistRTM. In summary, primary nanoscale confinement of Gd3+ ions in US-tubes has resulted in a new class of CAs which could revitalize low-field contrast-enhanced MRI, while extending and complementing current high-field MRI technology, as well. The observed boost in relaxivity upon a secondary nanoscale confinement of Gd-CAs within SiMPs suggests that additional unforeseen nanoscale effects may have the potential to further boost performance of MRI CAs.

Effects of Dehydroepiandrosterone Supplementation during Stressful Military Training: A Randomized, Controlled, Double-Blind Field Study

DTIC Science & Technology

2011-01-01

DHEAS. All samples were assayed for salivary DHEA in duplicate using a highly sensitive enzyme immunoassay (Salimetrics, LLC). The test used 50ml of...p , 0.0001, n ¼ 39). Similarly, samples were assayed for salivary DHEAS in duplicate using a highly sensitive enzyme immuno- assay (Salimetrics, LLC...assayed for salivary testosterone. This was performed in duplicate using a highly sensitive enzyme immunoassay (Salimetrics, LLC). The test used 25ml of

Sensing Performance Analysis on Quartz Tuning Fork-Probe at the High Order Vibration Mode for Multi-Frequency Scanning Probe Microscopy

PubMed Central

Gao, Fengli; Li, Xide

2018-01-01

Multi-frequency scanning near-field optical microscopy, based on a quartz tuning fork-probe (QTF-p) sensor using the first two orders of in-plane bending symmetrical vibration modes, has recently been developed. This method can simultaneously achieve positional feedback (based on the 1st in-plane mode called the low mode) and detect near-field optically induced forces (based on the 2nd in-plane mode called the high mode). Particularly, the high mode sensing performance of the QTF-p is an important issue for characterizing the tip-sample interactions and achieving higher resolution microscopic imaging but the related researches are insufficient. Here, we investigate the vibration performance of QTF-p at high mode based on the experiment and finite element method. The frequency spectrum characteristics are obtained by our homemade laser Doppler vibrometer system. The effects of the properties of the connecting glue layer and the probe features on the dynamic response of the QTF-p sensor at the high mode are investigated for optimization design. Finally, compared with the low mode, an obvious improvement of quality factor, of almost 50%, is obtained at the high mode. Meanwhile, the QTF-p sensor has a high force sensing sensitivity and a large sensing range at the high mode, indicating a broad application prospect for force sensing. PMID:29364847

The Effect of Cross Flow on Slat Noise

NASA Technical Reports Server (NTRS)

Lockard, David P.; Choudhari, Meelan M.

2010-01-01

This paper continues the computational examination (AIAA Journal, Vol. 45, No. 9, 2007, pp. 2174-2186) of the unsteady flow within the slat cove region of a multi-element high-lift airfoil configuration. Two simulations have been performed to examine the effect of cross flow on the near-field fluctuations and far-field acoustics. The cross flow was imposed by changing the free-stream velocity vector and modifying the Reynolds number. The cross flow does appear to alter the dynamics in the cove region, but the impact on the noise seems to be more dependent on the flow conditions. However, separating out the true effects of the cross flow from those of the Mach and Reynolds number would require additional calculations to isolate those effects.

Experimental investigation of the effects of variable expanding channel on the performance of a low-power cusped field thruster

NASA Astrophysics Data System (ADS)

Liu, Hui; Zeng, Ming; Jiang, Wenjia; Yang, Chiyu; Ning, Zhongxi; Yu, Daren

2018-04-01

Due to a special magnetic field structure, the multi-cusped field thruster shows advantages of low wall erosion, low noise and high thrust density over a wide range of thrust. In this paper, expanding discharge channels are employed to make up for deficiencies on the range of thrust and plume divergence, which often emerges in conventional straight cylindrical channels. Three thruster geometries are fabricated with different expanding-angle channels, and a group of experiments are carried out to find out their influence on the performance and discharge characteristics of the thruster. A retarding potential analyzer and a Faraday probe are employed to analyze the structures of the plume in these three models. The results show that when the thrusters operate at low mass flow rate, the gradually-expanding channels exhibit lower propellant utilization and lower overall performance by amounts not exceeding 44.8% in ionization rate and 19.5% in anode efficiency, respectively. But the weakening of magnetic field intensity near the exit of expanding channels leads to an extended thrust throttling ability, a smaller plume divergence angle, and a relatively larger stable operating space without mode converting and the consequent performance degradation.

Attraction of position preference by spatial attention throughout human visual cortex.

PubMed

Klein, Barrie P; Harvey, Ben M; Dumoulin, Serge O

2014-10-01

Voluntary spatial attention concentrates neural resources at the attended location. Here, we examined the effects of spatial attention on spatial position selectivity in humans. We measured population receptive fields (pRFs) using high-field functional MRI (fMRI) (7T) while subjects performed an attention-demanding task at different locations. We show that spatial attention attracts pRF preferred positions across the entire visual field, not just at the attended location. This global change in pRF preferred positions systematically increases up the visual hierarchy. We model these pRF preferred position changes as an interaction between two components: an attention field and a pRF without the influence of attention. This computational model suggests that increasing effects of attention up the hierarchy result primarily from differences in pRF size and that the attention field is similar across the visual hierarchy. A similar attention field suggests that spatial attention transforms different neural response selectivities throughout the visual hierarchy in a similar manner. Copyright © 2014 Elsevier Inc. All rights reserved.

α,ω-dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors

NASA Astrophysics Data System (ADS)

Schamoni, Hannah; Noever, Simon; Nickel, Bert; Stutzmann, Martin; Garrido, Jose A.

2016-02-01

While organic semiconductors are being widely investigated for chemical and biochemical sensing applications, major drawbacks such as the poor device stability and low charge carrier mobility in aqueous electrolytes have not yet been solved to complete satisfaction. In this work, solution-gated organic field-effect transistors (SGOFETs) based on the molecule α,ω-dihexyl-sexithiophene (DH6T) are presented as promising platforms for in-electrolyte sensing. Thin films of DH6T were investigated with regard to the influence of the substrate temperature during deposition on the grain size and structural order. The performance of SGOFETs can be improved by choosing suitable growth parameters that lead to a two-dimensional film morphology and a high degree of structural order. Furthermore, the capability of the SGOFETs to detect changes in the pH or ionic strength of the gate electrolyte is demonstrated and simulated. Finally, excellent transistor stability is confirmed by continuously operating the device over a period of several days, which is a consequence of the low threshold voltage of DH6T-based SGOFETs. Altogether, our results demonstrate the feasibility of high performance and highly stable organic semiconductor devices for chemical or biochemical applications.

Computational Evaluation of the Steady and Pulsed Jet Effects on the Performance of a Circulation Control Wing Section

NASA Technical Reports Server (NTRS)

Liu, Yi; Sankar, Lakshmi N.; Englar, Robert J.; Ahuja, Krishan K.; Gaeta, R.

2005-01-01

Circulation Control technology is a very effective way of achieving high lift forces required by aircraft during take-off and landing. This technology can also directly control the flow field over the wing. Compared to a conventional high-lift system, a Circulation Control Wing (CCW) can generate comparable or higher lift forces during take-off/landing with fewer or no moving parts and much less complexity. In this work, an unsteady three-dimensional Navier-Stokes analysis procedure has been developed and applied to Circulation Control Wing configurations. The effects of 2-D steady jets and 2-D pulsed jets on the aerodynamic performance of CCW airfoils have been investigated. It is found that a steady jet can generate very high lift at zero angle of attack without stall, and that a small amount of blowing can eliminate vortex shedding at the trailing edge, a potential noise source. It is also found that a pulsed jet can achieve the same high lift as a steady jet at lower mass flow rates, especially at a high frequency, and that the Strouhal number has a more dominant effect on the pulsed jet performance than just the frequency or the free-stream velocity.

High-Field Superconductivity on Iron Chalcogenide FeSe

NASA Astrophysics Data System (ADS)

Shi, Anlu; Kitagawa, Shunsaku; Ishida, Kenji; Böhmer, Anna E.; Meingast, Christoph; Wolf, Thomas

2018-06-01

We have performed ac-susceptibility and 77Se-NMR measurements on single-crystal FeSe in the field range from 12.5 to 14.75 T below 1.6 K in order to investigate the superconducting properties of the B phase. Our results show that although superconductivity persists beyond the A-B transition line (H*), the broadening of the 77Se-NMR linewidth arising from the superconducting diamagnetic effect decreases at around H*, suggesting that superconducting character is changed at H*.

Experimental Study in Taguchi Method on Surface Quality Predication of HSM

NASA Astrophysics Data System (ADS)

Ji, Yan; Li, Yueen

2018-05-01

Based on the study of ball milling mechanism and machining surface formation mechanism, the formation of high speed ball-end milling surface is a time-varying and cumulative Thermos-mechanical coupling process. The nature of this problem is that the uneven stress field and temperature field affect the machined surface Process, the performance of the processing parameters in the processing interaction in the elastic-plastic materials produced by the elastic recovery and plastic deformation. The surface quality of machining surface is characterized by multivariable nonlinear system. It is still an indispensable and effective method to study the surface quality of high speed ball milling by experiments.

Discussion of Electrode Conditioning Mechanism Based on Pre-breakdown Current under Non-uniform Electric Field in Vacuum

NASA Astrophysics Data System (ADS)

Yasuoka, Takanori; Kato, Tomohiro; Kato, Katsumi; Okubo, Hitoshi

Electrode conditioning is very important technique for improvement of the insulation performance of vacuum circuit breakers (VCBs). This paper discusses the spark conditioning mechanism under non-uniform electric field focused on the pre-breakdown current. We quantitatively evaluated the spark conditioning effect by analyzing the pre-breakdown current based on Fowler-Nordheim equation. As a result, field enhancement factor β decreased with the increasing in breakdown voltage in the beginning of conditioning process, and finally β was saturated with the saturation of breakdown voltage. In addition, in case of non-uniform field, we found that β on high voltage rod electrode after conditioning varied according to the electric field strength on the rod electrode.

Testing the effects of temperature and humidity on printed passive UHF RFID tags on paper substrate

NASA Astrophysics Data System (ADS)

Linnea Merilampi, Sari; Virkki, Johanna; Ukkonen, Leena; Sydänheimo, Lauri

2014-05-01

This article is an interesting substrate material for environmental-friendly printable electronics. In this study, screen-printed RFID tags on paper substrate are examined. Their reliability was tested with low temperature, high temperature, slow temperature cycling, high temperature and high humidity and water dipping test. Environmental stresses affect the tag antenna impedance, losses and radiation characteristics due to their impact on the ink film and paper substrate. Low temperature, temperature cycling and high humidity did not have a radical effect on the measured parameters: threshold power, backscattered signal power or read range of the tags. However, the frequency response and the losses of the tags were slightly affected. Exposure to high temperature was found to even improve the tag performance due to the positive effect of high temperature on the ink film. The combined high humidity and high temperature had the most severe effect on the tag performance. The threshold power increased, backscattered power decreased and the read range was shortened. On the whole, the results showed that field use of these tags in high, low and changing temperature conditions and high humidity conditions is possible. Use of these tags in combined high-humidity and high-temperature conditions should be carefully considered.

Numerical Simulation and Performance Optimization of a Magnetophoretic Bio-separation chip

NASA Astrophysics Data System (ADS)

Golozar, Matin; Darabi, Jeff; Molki, Majid

Separation of micro/nanoparticles is important in biomedicine and biotechnology. This research presents the modeling and optimization of a magnetophoretic bio-separation chip for the isolation of biomaterials, such as circulating tumor cells (CTCs) from the peripheral blood. The chip consists of a continuous flow through microfluidic channels that contains locally engineered magnetic field gradients. The high gradient magnetic field produced by the magnets is spatially non-uniform and gives rise to an attractive force on magnetic particles that move through the flow channel. The computational model takes into account the magnetic and fluidic forces as well as the effect of the volume fraction of particles on the continuous phase. The model is used to investigate the effect of two-way particle-fluid coupling on both the capture efficiency and the flow pattern in the separation chip. The results show that the microfluidic device has the capability of separating CTCs from their native environment. Additionally, a parametric study is performed to investigate the effects of the channel height, substrate thickness, magnetic bead size, bioparticle size, and the number of beads per cell on the cell separation performance.

Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor

NASA Astrophysics Data System (ADS)

Feijoo, Pedro C.; Pasadas, Francisco; Iglesias, José M.; Martín, María J.; Rengel, Raúl; Li, Changfeng; Kim, Wonjae; Riikonen, Juha; Lipsanen, Harri; Jiménez, David

2017-12-01

The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with channel length scaling can be exploited in graphene field-effect transistors (GFETs) to get a competitive radio-frequency (RF) performance. Carrier mobility and saturation velocity were obtained from an ensemble Monte Carlo simulator that accounted for the relevant scattering mechanisms (intrinsic phonons, scattering with impurities and defects, etc). This information is fed into a self-consistent simulator, which solves the drift-diffusion equation coupled with the two-dimensional Poisson’s equation to take full account of short channel effects. Simulated GFET characteristics were benchmarked against experimental data from our fabricated devices. Our simulations show that scalability is supposed to bring to RF performance an improvement that is, however, highly limited by instability. Despite the possibility of a lower performance, a careful choice of the bias point can avoid instability. Nevertheless, maximum oscillation frequencies are still achievable in the THz region for channel lengths of a few hundreds of nanometers.

Progress in a novel architecture for high performance processing

NASA Astrophysics Data System (ADS)

Zhang, Zhiwei; Liu, Meng; Liu, Zijun; Du, Xueliang; Xie, Shaolin; Ma, Hong; Ding, Guangxin; Ren, Weili; Zhou, Fabiao; Sun, Wenqin; Wang, Huijuan; Wang, Donglin

2018-04-01

The high performance processing (HPP) is an innovative architecture which targets on high performance computing with excellent power efficiency and computing performance. It is suitable for data intensive applications like supercomputing, machine learning and wireless communication. An example chip with four application-specific integrated circuit (ASIC) cores which is the first generation of HPP cores has been taped out successfully under Taiwan Semiconductor Manufacturing Company (TSMC) 40 nm low power process. The innovative architecture shows great energy efficiency over the traditional central processing unit (CPU) and general-purpose computing on graphics processing units (GPGPU). Compared with MaPU, HPP has made great improvement in architecture. The chip with 32 HPP cores is being developed under TSMC 16 nm field effect transistor (FFC) technology process and is planed to use commercially. The peak performance of this chip can reach 4.3 teraFLOPS (TFLOPS) and its power efficiency is up to 89.5 gigaFLOPS per watt (GFLOPS/W).

Non-Fermi-liquid magic angle effects in high magnetic fields

NASA Astrophysics Data System (ADS)

Lebed, A. G.

2016-07-01

We investigate a theoretical problem of electron-electron interactions in an inclined magnetic field in a quasi-one-dimensional (Q1D) conductor. We show that they result in strong non-Fermi-liquid corrections to a specific heat, provided that the direction of the magnetic field is far from the so-called Lebed's magic angles (LMAs). If magnetic field is directed close to one of the LMAs, the specific heat corrections become small and the Fermi-liquid picture restores. As a result, we predict Fermi-liquid-non-Fermi-liquid angular crossovers in the vicinities of the LMA directions of the field. We suggest to perform the corresponding experiment in the Q1D conductor (Per) 2Au (mnt) 2 under pressure in magnetic fields of the order of H ≃25 T .

Field Tolerances for the Triplet Quadrupoles of the LHC High Luminosity Lattice

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nosochkov, Yuri; Cai, Y.; Jiao, Y.

2012-06-25

It has been proposed to implement the so-called Achromatic Telescopic Squeezing (ATS) scheme in the LHC high luminosity (HL) lattice to reduce beta functions at the Interaction Points (IP) up to a factor of 8. As a result, the nominal 4.5 km peak beta functions reached in the Inner Triplets (IT) at collision will be increased by the same factor. This, therefore, justifies the installation of new, larger aperture, superconducting IT quadrupoles. The higher beta functions will enhance the effects of the triplet quadrupole field errors leading to smaller beam dynamic aperture (DA). To maintain the acceptable DA, the effectsmore » of the triplet field errors must be re-evaluated, thus specifying new tolerances. Such a study has been performed for the so-called '4444' collision option of the HL-LHC layout version SLHCV3.01, where the IP beta functions are reduced by a factor of 4 in both planes with respect to a pre-squeezed value of 60 cm at two collision points. The dynamic aperture calculations were performed using SixTrack. The impact on the triplet field quality is presented.« less

BI-ground microstrip array coil vs. conventional microstrip array coil for mouse imaging at 7 tesla

NASA Astrophysics Data System (ADS)

Hernández, Ricardo; Terrones, M. A. López; Jakob, P. M.

2012-10-01

At high field strengths, the need for more efficient high frequency coils has grown. Since the radiation losses and the interaction between coil and sample increase proportionally to field strength, the quality factor (Q) and the sensitivity of the coil decrease as consequence of these negative effects. Since Zhang et al proposed in 2001 a new surface coil based on the microstrip transmission line for high frequency, different Tx-Rx phased arrays based on this concept have been already introduced in animal and whole body systems at high field strengths, each of them with different modifications in order to get better field homogeneity, SNR or isolation between coil elements in the array. All these arrays for animals systems have been built for rat imaging. One of these modifications is called BI-Ground Microstrip Array Coil (BIGMAC). The implementation of a smaller two-channel BIGMAC design for mouse imaging is studied and its performance compared to a two-channel conventional Microstrip array at 7 Tesla, the higher isolation by using BIGMAC elements in comparison with conventional Microstrip elements is shown in this work.

Bandwidth Limitations in Characterization of High Intensity Focused Ultrasound Fields in the Presence of Shocks

NASA Astrophysics Data System (ADS)

Khokhlova, V. A.; Bessonova, O. V.; Soneson, J. E.; Canney, M. S.; Bailey, M. R.; Crum, L. A.

2010-03-01

Nonlinear propagation effects result in the formation of weak shocks in high intensity focused ultrasound (HIFU) fields. When shocks are present, the wave spectrum consists of hundreds of harmonics. In practice, shock waves are modeled using a finite number of harmonics and measured with hydrophones that have limited bandwidths. The goal of this work was to determine how many harmonics are necessary to model or measure peak pressures, intensity, and heat deposition rates of the HIFU fields. Numerical solutions of the Khokhlov-Zabolotskaya-Kuznetzov-type (KZK) nonlinear parabolic equation were obtained using two independent algorithms, compared, and analyzed for nonlinear propagation in water, in gel phantom, and in tissue. Measurements were performed in the focus of the HIFU field in the same media using fiber optic probe hydrophones of various bandwidths. Experimental data were compared to the simulation results.

Low-voltage operating flexible ferroelectric organic field-effect transistor nonvolatile memory with a vertical phase separation P(VDF-TrFE-CTFE)/PS dielectric

NASA Astrophysics Data System (ADS)

Xu, Meili; Xiang, Lanyi; Xu, Ting; Wang, Wei; Xie, Wenfa; Zhou, Dayu

2017-10-01

Future flexible electronic systems require memory devices combining low-power operation and mechanical bendability. However, high programming/erasing voltages, which are universally needed to switch the storage states in previously reported ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memories (NVMs), severely prevent their practical applications. In this work, we develop a route to achieve a low-voltage operating flexible Fe-OFET NVM. Utilizing vertical phase separation, an ultrathin self-organized poly(styrene) (PS) buffering layer covers the surface of the ferroelectric polymer layer by one-step spin-coating from their blending solution. The ferroelectric polymer with a low coercive field contributes to low-voltage operation in the Fe-OFET NVM. The polymer PS contributes to the improvement of mobility, attributing to screening the charge scattering and decreasing the surface roughness. As a result, a high performance flexible Fe-OFET NVM is achieved at the low P/E voltages of ±10 V, with a mobility larger than 0.2 cm2 V-1 s-1, a reliable P/E endurance over 150 cycles, stable data storage retention capability over 104 s, and excellent mechanical bending durability with a slight performance degradation after 1000 repetitive tensile bending cycles at a curvature radius of 5.5 mm.

Carbon Nanotube Bundle Array Cold Cathodes for THz Vacuum Tube Sources

NASA Astrophysics Data System (ADS)

Manohara, Harish M.; Toda, Risaku; Lin, Robert H.; Liao, Anna; Bronikowski, Michael J.; Siegel, Peter H.

2009-12-01

We present high performance cold cathodes composed of arrays of carbon nanotube bundles that routinely produce > 15 A/cm2 at applied fields of 5 to 8 V/µm without any beam focusing. They have exhibited robust operation in poor vacuums of 10-6 to 10-4 Torr- a typically achievable range inside hermetically sealed microcavities. A new double-SOI process was developed to monolithically integrate a gate and additional beam tailoring electrodes. The ability to design the electrodes for specific requirements makes carbon nanotube field emission sources extremely flexible. The lifetime of these cathodes is found to be affected by two effects: a gradual decay of emission due to anode sputtering, and catastrophic failure because of dislodging of CNT bundles at high fields ( > 10 V/µm).

Microchip Electrophoresis at Elevated Temperatures and High Separation Field Strengths

PubMed Central

Mitra, Indranil; Marczak, Steven P.; Jacobson, Stephen C.

2014-01-01

We report free-solution microchip electrophoresis performed at elevated temperatures and high separation field strengths. We used microfluidic devices with 11-cm long separation channels to conduct separations at temperatures between 22 (ambient) and 45 °C and field strengths from 100 to 1000 V/cm. To evaluate separation performance, N-glycans were used as a model system and labeled with 8-aminopyrene-1,3,6-trisulfonic acid to impart charge for electrophoresis and render them fluorescent. Typically, increased diffusivity at higher temperatures leads to increased axial dispersion and poor separation performance; however, we demonstrate that sufficiently high separation field strengths can be used to offset the impact of increased diffusivity in order to maintain separation efficiency. Efficiencies for these free-solution separations are the same at temperatures of 25, 35, and 45 °C with separation field strengths ≥500 V/cm. PMID:24114979

Entanglement and Metrology with Singlet-Triplet Qubits

NASA Astrophysics Data System (ADS)

Shulman, Michael Dean

Electron spins confined in semiconductor quantum dots are emerging as a promising system to study quantum information science and to perform sensitive metrology. Their weak interaction with the environment leads to long coherence times and robust storage for quantum information, and the intrinsic tunability of semiconductors allows for controllable operations, initialization, and readout of their quantum state. These spin qubits are also promising candidates for the building block for a scalable quantum information processor due to their prospects for scalability and miniaturization. However, several obstacles limit the performance of quantum information experiments in these systems. For example, the weak coupling to the environment makes inter-qubit operations challenging, and a fluctuating nuclear magnetic field limits the performance of single-qubit operations. The focus of this thesis will be several experiments which address some of the outstanding problems in semiconductor spin qubits, in particular, singlet-triplet (S-T0) qubits. We use these qubits to probe both the electric field and magnetic field noise that limit the performance of these qubits. The magnetic noise bath is probed with high bandwidth and precision using novel techniques borrowed from the field of Hamiltonian learning, which are effective due to the rapid control and readout available in S-T 0 qubits. These findings allow us to effectively undo the undesired effects of the fluctuating nuclear magnetic field by tracking them in real-time, and we demonstrate a 30-fold improvement in the coherence time T2*. We probe the voltage noise environment of the qubit using coherent qubit oscillations, which is partially enabled by control of the nuclear magnetic field. We find that the voltage noise bath is frequency-dependent, even at frequencies as high as 1MHz, and it shows surprising and, as of yet, unexplained temperature dependence. We leverage this knowledge of the voltage noise environment, the nuclear magnetic field control, as well as new techniques for calibrated measurement of the density matrix in a singlet-triplet qubit to entangle two adjacent single-triplet qubits. We fully characterize the generated entangled states and prove that they are, indeed, entangled. This work opens new opportunities to use qubits as sensors for improved metrological capabilities, as well as for improved quantum information processing. The singlet-triplet qubit is unique in that it can be used to probe two fundamentally different noise baths, which are important for a large variety of solid state qubits. More specifically, this work establishes the singlet-triplet qubit as a viable candidate for the building block of a scalable quantum information processor.

Comparative Study on Graded-Barrier AlxGa1‑xN/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor by Using Ultrasonic Spray Pyrolysis Deposition Technique

NASA Astrophysics Data System (ADS)

Lee, Ching-Sung; Hsu, Wei-Chou; Huang, Yi-Ping; Liu, Han-Yin; Yang, Wen-Luh; Yang, Shen-Tin

2018-06-01

Comparative study on a novel Al2O3-dielectric graded-barrier (GB) AlxGa1‑xN/AlN/GaN/Si (x = 0.22 ∼ 0.3) metal-oxide-semiconductor heterostructure field-effect transistor (MOS-HFET) formed by using the ultrasonic spray pyrolysis deposition (USPD) technique has been made with respect to a conventional-barrier (CB) Al0.26Ga0.74N/AlN/GaN/Si MOS-HFET and the reference Schottky-gate HFET devices. The GB AlxGa1‑xN was devised to improve the interfacial quality and enhance the Schottky barrier height at the same time. A cost-effective ultrasonic spray pyrolysis deposition (USPD) method was used to form the high-k Al2O3 gate dielectric and surface passivation on the AlGaN barrier of the present MOS-HFETs. Comprehensive device performances, including maximum extrinsic transconductance (g m,max), maximum drain-source current density (I DS,max), gate-voltage swing (GVS) linearity, breakdown voltages, subthreshold swing (SS), on/off current ratio (I on /I off ), high frequencies, and power performance are investigated.

MOSFET detectors in quality assurance of tomotherapy treatments.

PubMed

Cherpak, Amanda; Studinski, Ryan C N; Cygler, Joanna E

2008-02-01

The purpose of this work was to characterize metal oxide semiconductor field-effect transistors (MOSFETs) in a 6 MV conventional linac and investigate their use for quality assurance of radiotherapy treatments with a tomotherapy Hi-Art unit. High sensitivity and standard sensitivity MOSFETs were first calibrated and then tested for reproducibility, field size dependence, and accuracy of measuring surface dose in a 6 MV beam as well as in a tomotherapy Hi-Art unit. In vivo measurements were performed on both a RANDO phantom and several head and neck cancer patients treated with tomotherapy and compared to TLD measurements and treatment plan doses to evaluate the performance of MOSFETs in a high gradient radiation field. The average calibration factor found was 0.345+/-2.5%cGy/mV for the high sensitivity MOSFETs tested and 0.901+/-2.4%cGy/mV for the standard sensitivity MOSFETs. MOSFET measured surface doses had an average agreement with ion chamber measurements of 1.55% for the high sensitivity MOSFET and 5.23% for the standard sensitivity MOSFET when averaged over all trials and field sizes tested. No significant dependence on field size was found for the standard sensitivity MOSFETs, however a maximum difference of 5.34% was found for the high sensitivity MOSFET calibration factors in the field sizes tested. Measurements made with MOSFETS on head and neck patients treated on a tomotherapy Hi-Art unit had an average agreement of (3.26+/-0.03)% with TLD measurements, however the average of the absolute difference between the MOSFET measurements and the treatment plan skin doses was (12.2+/-7.5)%. The MOSFET measured patient skin doses also had good reproducibility, with inter-fraction deviations ranging from 1.4% to 6.6%. Similar results were found from trials using a RANDO phantom. The MOSFETs performed well when used in the tomotherapy Hi-Art unit and did not increase the overall treatment set-up time when used for patient measurements. It was found that MOSFETs are suitable detectors for surface dose measurements in both conventional beam and tomotherapy treatments and they can provide valuable skin dose information in areas where the treatment planning system may not be accurate.

Macular Ganglion Cell Imaging Study: Covariate Effects on the Spectral Domain Optical Coherence Tomography for Glaucoma Diagnosis

PubMed Central

Jeong, Jae Hoon; Choi, Yun Jeong; Park, Ki Ho; Kim, Dong Myung

2016-01-01

Purpose To evaluate the effect of multiple covariates on the diagnostic performance of the Cirrus high-definition optical coherence tomography (HD-OCT) for glaucoma detection. Methods A prospective case-control study was performed and included 173 recently diagnosed glaucoma patients and 63 unaffected individuals from the Macular Ganglion Cell Imaging Study. Regression analysis of receiver operating characteristic were conducted to evaluate the influence of age, spherical equivalent, axial length, optic disc size, and visual field index on the macular ganglion cell-inner plexiform layer (GCIPL) and peripapillary retinal nerve fiber layer (RNFL) measurements. Results Disease severity, as measured by visual field index, had a significant effect on the diagnostic performance of all Cirrus HD-OCT parameters. Age, axial length and optic disc size were significantly associated with diagnostic accuracy of average peripapillary RNFL thickness, whereas axial length had a significant effect on the diagnostic accuracy of average GCIPL thickness. Conclusions Diagnostic performance of the Cirrus HD-OCT may be more accurate in the advanced stages of glaucoma than at earlier stages. A smaller optic disc size was significantly associated with improved the diagnostic ability of average RNFL thickness measurements; however, GCIPL thickness may be less affected by age and optic disc size. PMID:27490718

In situ synthesis and catalytic application of reduced graphene oxide supported cobalt nanowires

NASA Astrophysics Data System (ADS)

Xu, Zhiqiang; Long, Qin; Deng, Yi; Liao, Li

2018-05-01

Controlled synthesis of magnetic nanocomposite with outstanding catalytic performances is a promising strategy in catalyst industry. We proposed a novel concept for fabrication of reduced graphene oxide-supported cobalt nanowires (RGO/Co-NWs) nanocomposite as high-efficient magnetic catalyst. Unlike the majority of experiments necessitating harsh synthesis conditions such as high-pressure, high-temperature and expensive template, here the RGO/Co-NWs were successfully prepared in aqueous solution under mild conditions with the assistance of external magnetic field. The synthetic process was facile and external magnetic force was adopted to induce the unidirectional self-assembly of cobalt crystals on graphene oxide to form RGO/Co-NWs. The possible formation mechanism laid on the fact that the dipole magnetic moments of the nanoparticles were aligned along the magnetic induction lines with the external magnetic field direction resulting in the formation of nanowires elongating in the direction of the magnetization axis. Simultaneously, a series of controlled reactions were conducted to illuminate the effect of graphene oxide, external magnetic field and PVP on the morphology and size of RGO/Co-NWs in the present approach. More importantly, the nanocomposite exhibited a high catalytic performance towards ammonia borane. Hence the novel nanocomposite holds a great potential for technological applications such as catalyst industry.

Polarization compensation at low p-GaN doping density in InGaN/GaN p-i-n solar cells: Effect of InGaN interlayers

NASA Astrophysics Data System (ADS)

Saini, Basant; Adhikari, Sonachand; Pal, Suchandan; Kapoor, Avinsahi

2017-07-01

The effectiveness of polarization matching layer (PML) between i-InGaN/p-GaN is studied numerically for Ga-face InGaN/GaN p-i-n solar cell at low p-GaN doping (∼5e17 cm-3). The simulations are performed for four InxGa1-xN/GaN heterostructures (x = 10%, 15%, 20% and 25%), thus investigating the impact of PML for low as well as high indium containing absorber regions. Use of PML presents a suitable alternative to counter the effects of polarization-induced electric fields arising at low p-GaN doping density especially for absorber regions with high indium (>10%). It is seen that it not only mitigates the negative effects of polarization-induced electric fields but also reduces the high potential barriers existing at i-InGaN/p-GaN heterojunction. The improvement in photovoltaic properties of the heterostructures even at low p-GaN doping validates this claim.

27 Al MAS NMR Studies of HBEA Zeolite at Low to High Magnetic Fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Jian Zhi; Wan, Chuan; Vjunov, Aleksei

27Al single pulse (SP) MAS NMR spectra of HBEA zeolites with high Si/Al ratios of 71 and 75 were obtained at three magnetic field strengths of 7.05, 11.75 and 19.97 T. High field 27Al MAS NMR spectra acquired at 19.97 T show significantly improved spectral resolution, resulting in at least two well-resolved tetrahedral-Al NMR peaks. Based on the results obtained from 27Al MAS and MQMAS NMR acquired at 19.97 T, four different quadrupole peaks are used to deconvolute the 27Al SP MAS spectra acquired at vari-ous fields by using the same set of quadrupole coupling constants, asymmetric parameters and relativemore » integrated peak intensities for the tetrahedral Al peaks. The line shapes of individual peaks change from typical quadrupole line shape at low field to essentially symmetrical line shapes at high field. We demonstrate that for fully hydrated HBEA zeolites the effect of second order quadrupole interaction can be ignored and quantitative spectral analysis can be performed by directly fitting the high field spectra using mixed Gaussian/Lorentzian line shapes. Also, the analytical steps described in our work allow direct assignment of spectral intensity to individual Al tetrahedral sites (T-sites) of zeolite HBEA. Finally, the proposed concept is suggested generally applicable to other zeo-lite framework types, thus, allowing a direct probing of Al distributions by NMR spectroscopic methods in zeolites with high confi-dence.« less

Structure-Property Relationships of Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors.

PubMed

Kim, Min Je; Jung, A-Ra; Lee, Myeongjae; Kim, Dongjin; Ro, Suhee; Jin, Seon-Mi; Nguyen, Hieu Dinh; Yang, Jeehye; Lee, Kyung-Koo; Lee, Eunji; Kang, Moon Sung; Kim, Hyunjung; Choi, Jong-Ho; Kim, BongSoo; Cho, Jeong Ho

2017-11-22

We report high-performance top-gate bottom-contact flexible polymer field-effect transistors (FETs) fabricated by flow-coating diketopyrrolopyrrole (DPP)-based and naphthalene diimide (NDI)-based polymers (P(DPP2DT-T2), P(DPP2DT-TT), P(DPP2DT-DTT), P(NDI2OD-T2), P(NDI2OD-F2T2), and P(NDI2OD-Se2)) as semiconducting channel materials. All of the polymers displayed good FET characteristics with on/off current ratios exceeding 10 7 . The highest hole mobility of 1.51 cm 2 V -1 s -1 and the highest electron mobility of 0.85 cm 2 V -1 s -1 were obtained from the P(DPP2DT-T2) and P(NDI2OD-Se2) polymer FETs, respectively. The impacts of the polymer structures on the FET performance are well-explained by the interplay between the crystallinity, the tendency of the polymer backbone to adopt an edge-on orientation, and the interconnectivity of polymer fibrils in the film state. Additionally, we demonstrated that all of the flexible polymer-based FETs were highly resistant to tensile stress, with negligible changes in their carrier mobilities and on/off ratios after a bending test. Conclusively, these high-performance, flexible, and durable FETs demonstrate the potential of semiconducting conjugated polymers for use in flexible electronic applications.

Low-resistance 2D/2D ohmic contacts: A universal approach to high-performance WSe 2, MoS 2, and MoSe 2 transistors

DOE PAGES

Chuang, Hsun -Jen; Chamlagain, Bhim; Koehler, Michael; ...

2016-02-04

Here, we report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no intentional doping as channel materials. We demonstrate that few-layer WSe 2 field-effect transistors (FETs) with 2D/2D contacts exhibit low contact resistances of ~0.3 kΩ μm, high on/off ratios up to >10 9, and high drive currents exceeding 320 μA μm –1. These favorable characteristics are combined with a two-terminal field-effect hole mobility μ FE ≈ 2 × 10 2 cm 2 V –1 smore » –1 at room temperature, which increases to >2 × 10 3 cm 2 V –1 s –1 at cryogenic temperatures. We observe a similar performance also in MoS 2 and MoSe 2 FETs with 2D/2D drain and source contacts. The 2D/2D low-resistance ohmic contacts presented here represent a new device paradigm that overcomes a significant bottleneck in the performance of TMDs and a wide variety of other 2D materials as the channel materials in postsilicon electronics.« less

Multi-GPU hybrid programming accelerated three-dimensional phase-field model in binary alloy

NASA Astrophysics Data System (ADS)

Zhu, Changsheng; Liu, Jieqiong; Zhu, Mingfang; Feng, Li

2018-03-01

In the process of dendritic growth simulation, the computational efficiency and the problem scales have extremely important influence on simulation efficiency of three-dimensional phase-field model. Thus, seeking for high performance calculation method to improve the computational efficiency and to expand the problem scales has a great significance to the research of microstructure of the material. A high performance calculation method based on MPI+CUDA hybrid programming model is introduced. Multi-GPU is used to implement quantitative numerical simulations of three-dimensional phase-field model in binary alloy under the condition of multi-physical processes coupling. The acceleration effect of different GPU nodes on different calculation scales is explored. On the foundation of multi-GPU calculation model that has been introduced, two optimization schemes, Non-blocking communication optimization and overlap of MPI and GPU computing optimization, are proposed. The results of two optimization schemes and basic multi-GPU model are compared. The calculation results show that the use of multi-GPU calculation model can improve the computational efficiency of three-dimensional phase-field obviously, which is 13 times to single GPU, and the problem scales have been expanded to 8193. The feasibility of two optimization schemes is shown, and the overlap of MPI and GPU computing optimization has better performance, which is 1.7 times to basic multi-GPU model, when 21 GPUs are used.

The MQXA quadrupoles for the LHC low-beta insertions

NASA Astrophysics Data System (ADS)

Ajima, Y.; Higashi, N.; Iida, M.; Kimura, N.; Nakamoto, T.; Ogitsu, T.; Ohhata, H.; Ohuchi, N.; Shintomi, T.; Sugawara, S.; Sugita, K.; Tanaka, K.; Taylor, T.; Terashima, A.; Tsuchiya, K.; Yamamoto, A.

2005-09-01

High-performance superconducting quadrupole magnets, MQXA, for the LHC low-beta insertions have been designed, manufactured in series and tested. The design field gradient of the quadrupole, which has a coil aperture of diameter 70 mm, was 240 T/m at 1.9 K; its effective length is 6.37 m, and it is required to operate reliably at up to 215 T/m when subjected to radiation heat deposit in the coils of up to 5 W/m. The series of 20 magnets has been produced in industry, and tested at KEK. The magnet design is explained, and the construction and performance of the series units, in terms of training, field quality and geometry, are presented.

The 2010 ILSO-ISRU Field Test at Mauna Kea, Hawaii: Results from the Miniaturised Mossbauer Spectrometers Mimos II and Mimos IIA

NASA Technical Reports Server (NTRS)

Klingelhoefer, G.; Morris, R. V.; Blumers, M.; Bernhardt, B.; Graff, T.

2011-01-01

For the advanced Moessbauer instrument MIMOS IIA, the new detector technologies and electronic components increase sensitivity and performance significantly. In combination with the high energy resolution of the SDD it is possible to perform X-ray fluorescence analysis simultaneously to Moessbauer spectroscopy. In addition to the Fe-mineralogy, information on the sample's elemental composition will be gathered. The ISRU 2010 field campaign demonstrated that in-situ Moessbauer spectroscopy is an effective tool for both science and feedstock exploration and process monitoring. Engineering tests showed that a compact nickel metal hydride battery provided sufficient power for over 12 hr of continuous operation for the MIMOS instruments.

Order Effects of Learning with Modeling and Simulation Software on Field-Dependent and Field-Independent Children's Cognitive Performance: An Interaction Effect

ERIC Educational Resources Information Center

Angeli, Charoula; Valanides, Nicos; Polemitou, Eirini; Fraggoulidou, Elena

2014-01-01

The study examined the interaction between field dependence-independence (FD/I) and learning with modeling software and simulations, and their effect on children's performance. Participants were randomly assigned into two groups. Group A first learned with a modeling tool and then with simulations. Group B learned first with simulations and then…

Magnetic Field Dependent Charge Transport Studies in Organic Semiconducting Materials

NASA Astrophysics Data System (ADS)

Martin, Jesse

Organic magnetoresistance is a phenomenon that is exhibited by many organic semiconductors. The resistance can change by more than 10 % at room temperature and as little as 10 milli-Tesla (mT) applied magnetic field. The change can be either positive or negative, and is angle invariant with respect to magnetic field orientation. Several theories have been presented to account for this anomalous magnetoresistance, but thus far the magnetoresistance by interconversion of singlets and triplets (MIST) model has been the most successful in explaining the behavior. Despite all the research that has gone into this effect, very few reports have gone to fields above 1 Tesla (T). In this manuscript, several specific predictions made by the MIST mechanism will be tested including qualitative behaviors and a quantitative fitting. Studies have been performed up to 35 T to explore the high field behavior. It will be demonstrated that for the low field regime, the MIST model is in excellent agreement with experiment, but that the high field regime is caused by a separate mechanism, not described by any current theory.

Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits.

PubMed

Chen, Bingyan; Zhang, Panpan; Ding, Li; Han, Jie; Qiu, Song; Li, Qingwen; Zhang, Zhiyong; Peng, Lian-Mao

2016-08-10

Top-gated p-type field-effect transistors (FETs) have been fabricated in batch based on carbon nanotube (CNT) network thin films prepared from CNT solution and present high yield and highly uniform performance with small threshold voltage distribution with standard deviation of 34 mV. According to the property of FETs, various logical and arithmetical gates, shifters, and d-latch circuits were designed and demonstrated with rail-to-rail output. In particular, a 4-bit adder consisting of 140 p-type CNT FETs was demonstrated with higher packing density and lower supply voltage than other published integrated circuits based on CNT films, which indicates that CNT based integrated circuits can reach to medium scale. In addition, a 2-bit multiplier has been realized for the first time. Benefitted from the high uniformity and suitable threshold voltage of CNT FETs, all of the fabricated circuits based on CNT FETs can be driven by a single voltage as small as 2 V.

High performance dendrimer functionalized single-walled carbon nanotubes field effect transistor biosensor for protein detection

NASA Astrophysics Data System (ADS)

Rajesh, Sharma, Vikash; Puri, Nitin K.; Mulchandani, Ashok; Kotnala, Ravinder K.

2016-12-01

We report a single-walled carbon nanotube (SWNT) field-effect transistor (FET) functionalized with Polyamidoamine (PAMAM) dendrimer with 128 carboxyl groups as anchors for site specific biomolecular immobilization of protein antibody for C-reactive protein (CRP) detection. The FET device was characterized by scanning electron microscopy and current-gate voltage (I-Vg) characteristic studies. A concentration-dependent decrease in the source-drain current was observed in the regime of clinical significance, with a detection limit of ˜85 pM and a high sensitivity of 20% change in current (ΔI/I) per decade CRP concentration, showing SWNT being locally gated by the binding of CRP to antibody (anti-CRP) on the FET device. The low value of the dissociation constant (Kd = 0.31 ± 0.13 μg ml-1) indicated a high affinity of the device towards CRP analyte arising due to high anti-CRP loading with a better probe orientation on the 3-dimensional PAMAM structure.

Effect on High-Intensity Fields of a Tough Hydrophone With Hydrothermal PZT Thick-Film Vibrator and Titanium Front Layer.

PubMed

Okada, Nagaya; Takeuchi, Shinichi

2017-07-01

A novel tough hydrophone was fabricated by depositing hydrothermally synthesized lead zirconate titanate polycrystalline film on the back-side surface of a titanium plate. Our developed tough hydrophone resisted damage in a high-pressure field (15 MPa) at a focal point of a sinusoidal continuous wave driven by a concave high-intensity focused ultrasound (HIFU) transducer with up to 50 W of power input to the sound source. The hydrophone was suitable for the HIFU field, even though the hydrophone has a flat-shape tip of 3.5 mm diameter, which is slightly larger than the wavelength of a few megahertz. In this paper, experiments are performed to assess the effect on the HIFU field of changing the shape of the tough hydrophone, with the aim of developing a tough hydrophone. The spatial distribution of the acoustic bubbles around the focal point was visualized by using ultrasonic diagnostic equipment with the tough hydrophone located at the focal point of the HIFU transducer. From the visualization, the trapped acoustic bubbles were seen to arise from the standing wave, which implies that the acoustic pressure is reduced by this cloud of acoustic bubbles that appeared during hydrophone measurement. Although cavitation and acoustic bubbles may be unavoidable when using high-intensity ultrasound, the estimated result of evaluating acoustic fields without misunderstanding by acoustic bubbles can be obtained by the aid of visualizing bubbles around the tough hydrophone.

Highway concrete pavement technology development and testing : volume III, field evaluation of Strategic Highway Research Program (SHRP) C-205 test sites (high-performance concrete).

DOT National Transportation Integrated Search

2006-05-01

This research study, sponsored by the Federal Highway Administration, summarizes the field performance of eight high-early-strength (HES) : concrete patches between 1994 and 1998. The patches were constructed under the Strategic Highway Research Prog...

Examination of the high-frequency capability of carbon nanotube FETs

NASA Astrophysics Data System (ADS)

Pulfrey, David L.; Chen, Li

2008-09-01

New results are added to a recent critique of the high-frequency performance of carbon nanotube field-effect transistors (CNFETs). On the practical side, reduction of the number of metallic tubes in CNFETs fashioned from multiple nanotubes has allowed the measured fT to be increased to 30 GHz. On the theoretical side, the opinion that the band-structure-determined velocity limits the high-frequency performance has been reinforced by corrections to recent simulation results for doped-contact CNFETs, and by the ruling out of the possibility of favourable image-charge effects. Inclusion in the simulations of the features of finite gate-metal thickness and source/drain contact resistance has given an indication of likely practical values for fT. A meaningful comparison between CNFETs with doped-contacts and metallic contacts has been made.

The Effect of Field Specialization Variation on Technological Pedagogical Content Knowledge (TPACK) among Malaysian TVET Instructors

ERIC Educational Resources Information Center

Chua, Junnaina Husin; Jamil, Hazri

2014-01-01

Technological Knowledge is directly related to productivity, enhanced performance and service quality. Technology integration in the Technical and Vocational Education and Training (TVET) curriculum is expected due to high application of technical knowledge and technology applications. TPACK is a professional knowledge framework that gives…

Affirmation effects on math scores: The importance of high school track.

PubMed

Bancroft, Amanda; Bratter, Jenifer; Rowley, Kristie

2017-05-01

Stereotype threat has been shown to affect academic performance of minority racial groups. Minority girls may experience the burdens of both race and gender - a "double bind" theorized to affect the underrepresentation of women in STEM fields. A randomized controlled trial focused on alleviating stereotype threat in three high schools in a large U.S. metro demonstrates the effects of affirmative writing interventions, which have previously shown positive effects for minority and female students. Results indicate effects for these groups were insignificant. However, results also show that student track is highly significant at p < 0.001, and interactive analyses suggest that the intervention may help alleviate threat for higher-achieving students. Copyright © 2016 Elsevier Inc. All rights reserved.

In-Operando Spatial Imaging of Edge Termination Electric Fields in GaN Vertical p-n Junction Diodes

DOE PAGES

Leonard, Francois; Dickerson, J. R.; King, M. P.; ...

2016-05-03

Control of electric fields with edge terminations is critical to maximize the performance of high-power electronic devices. We proposed a variety of edge termination designs which makes the optimization of such designs challenging due to many parameters that impact their effectiveness. And while modeling has recently allowed new insight into the detailed workings of edge terminations, the experimental verification of the design effectiveness is usually done through indirect means, such as the impact on breakdown voltages. In this letter, we use scanning photocurrent microscopy to spatially map the electric fields in vertical GaN p-n junction diodes in operando. We alsomore » reveal the complex behavior of seemingly simple edge termination designs, and show how the device breakdown voltage correlates with the electric field behavior. Modeling suggests that an incomplete compensation of the p-type layer in the edge termination creates a bilayer structure that leads to these effects, with variations that significantly impact the breakdown voltage.« less

Panoscopic approach for high-performance Te-doped skutterudite

DOE PAGES

Liang, Tao; Su, Xianli; Yan, Yonggao; ...

2017-02-24

One-step plasma-activated sintering (OS-PAS) fabrication of single-phase high-performance CoSb 3-based skutterudite thermoelectric material with a hierarchical structure on a time scale of a few minutes is first reported here. The formation mechanism of the CoSb 3 phase and the effects of the current and pressure fields on the phase transformation and microstructure evolution are studied in the one-step PAS process. The application of the panoscopic approach to this system and its effect on the transport properties are investigated. The results show that the hierarchical structure forms during the formation of the skutterudite phase under the effects of both current andmore » sintering pressure. The samples fabricated by the OS-PAS technique have defined hierarchical structures, which scatter phonons more intensely over a broader range of frequencies and significantly reduce the lattice thermal conductivity. High-performance bulk Te-doped skutterudite with the maximum ZT of 1.1 at 820 K for the composition CoSb 2.875Te 0.125 was obtained. Such high ZT values rival those obtained from single filled skutterudites. As a result, this newly developed OS-PAS technique enhances the thermoelectric performance, dramatically shortens the synthesis period and provides a facile method for obtaining hierarchical thermoelectric materials on a large scale.« less

Suppressing Shuttle Effect Using Janus Cation Exchange Membrane for High-Performance Lithium-Sulfur Battery Separator.

PubMed

Li, Zhen; Han, Yu; Wei, Junhua; Wang, Wenqiang; Cao, Tiantian; Xu, Shengming; Xu, Zhenghe

2017-12-27

Suppressing the shuttle effect of polysulfide ions to obtain high durability and good electrochemical performance is of great concern in the field of lithium-sulfur batteries. To address this issue, a Janus membrane consisting of an ultrathin dense layer and a robust microporous layer is fabricated using cation exchange resin. Different from the composite membranes made from polyolefin membranes, the multiple layers of the Janus membrane in this study are synchronously generated by one step, getting rid of the additional complex coating processes. Excellent overall performance is obtained by the cooperation of multiple factors. The excellent ionic selectivity of cation exchange resin renders a great suppression of the shuttle effect, endowing the lithium-sulfur battery with high Coulombic efficiency of 92.0-99.0% (LiNO 3 -free electrolyte). The ultrathin property of a dense layer renders a low ionic resistance, resulting in 60% higher discharge capacity over the entire C-rates (versus the control sample with Celgard 2400 membrane). The robust macroporous layer supports the ultrathin layer to achieve a free-standing property, ensuring the usability of the Janus membrane.

Permittivity and performance of dielectric pads with sintered ceramic beads in MRI: early experiments and simulations at 3 T.

PubMed

Luo, Wei; Lanagan, Michael T; Sica, Christopher T; Ryu, Yeunchul; Oh, Sukhoon; Ketterman, Matthew; Yang, Qing X; Collins, Christopher M

2013-07-01

Passive dielectric materials have been used to improve aspects of MRI by affecting the distribution of radiofrequency electromagnetic fields. Recently, interest in such materials has increased with the number of high-field MRI sites. Here, we introduce a new material composed of sintered high-permittivity ceramic beads in deuterated water. This arrangement maintains the ability to create flexible pads for conforming to individual subjects. The properties of the material are measured and the performance of the material is compared to previously used materials in both simulation and experiment at 3 T. Results show that both permittivity of the beads and effect on signal-to-noise ratio and required transmit power in MRI are greater than those of materials consisting of ceramic powder in water. Importantly, use of beads results in both higher permittivity and lower conductivity than use of powder. Copyright © 2012 Wiley Periodicals, Inc.

A digital receiver module with direct data acquisition for magnetic resonance imaging systems.

PubMed

Tang, Weinan; Sun, Hongyu; Wang, Weimin

2012-10-01

A digital receiver module for magnetic resonance imaging (MRI) with detailed hardware implementations is presented. The module is based on a direct sampling scheme using the latest mixed-signal circuit design techniques. A single field-programmable gate array chip is employed to perform software-based digital down conversion for radio frequency signals. The modular architecture of the receiver allows multiple acquisition channels to be implemented on a highly integrated printed circuit board. To maintain the phase coherence of the receiver and the exciter in the context of direct sampling, an effective phase synchronization method was proposed to achieve a phase deviation as small as 0.09°. The performance of the described receiver module was verified in the experiments for both low- and high-field (0.5 T and 1.5 T) MRI scanners and was compared to a modern commercial MRI receiver system.

Application of advanced high speed turboprop technology to future civil short-haul transport aircraft design

NASA Technical Reports Server (NTRS)

Conlon, J. A.; Bowles, J. V.

1978-01-01

With an overall goal of defining the needs and requirements for short-haul transport aircraft research and development, the objective of this paper is to determine the performance and noise impact of short-haul transport aircraft designed with an advanced turboprop propulsion system. This propulsion system features high-speed propellers that have more blades and reduced diameters. Aircraft are designed for short and medium field lengths; mission block fuel and direct operating costs (DOC) are used as performance measures. The propeller diameter was optimized to minimize DOC. Two methods are employed to estimate the weight of the acoustic treatment needed to reduce interior noise to an acceptable level. Results show decreasing gross weight, block fuel, DOC, engine size, and optimum propfan diameter with increasing field length. The choice of acoustic treatment method has a significant effect on the aircraft design.

A low-temperature scanning tunneling microscope capable of microscopy and spectroscopy in a Bitter magnet at up to 34 T.

PubMed

Tao, W; Singh, S; Rossi, L; Gerritsen, J W; Hendriksen, B L M; Khajetoorians, A A; Christianen, P C M; Maan, J C; Zeitler, U; Bryant, B

2017-09-01

We present the design and performance of a cryogenic scanning tunneling microscope (STM) which operates inside a water-cooled Bitter magnet, which can attain a magnetic field of up to 38 T. Due to the high vibration environment generated by the magnet cooling water, a uniquely designed STM and a vibration damping system are required. The STM scan head is designed to be as compact and rigid as possible, to minimize the effect of vibrational noise as well as fit the size constraints of the Bitter magnet. The STM uses a differential screw mechanism for coarse tip-sample approach, and operates in helium exchange gas at cryogenic temperatures. The reliability and performance of the STM are demonstrated through topographic imaging and scanning tunneling spectroscopy on highly oriented pyrolytic graphite at T = 4.2 K and in magnetic fields up to 34 T.

Feasibility of introducing ferromagnetic materials to onboard bulk high-Tc superconductors to enhance the performance of present maglev systems

NASA Astrophysics Data System (ADS)

Deng, Zigang; Wang, Jiasu; Zheng, Jun; Zhang, Ya; Wang, Suyu

2013-02-01

Performance improvement is a long-term research task for the promotion of practical application of promising high-temperature superconducting (HTS) magnetic levitation (maglev) vehicle technologies. We studied the feasibility to enhance the performance of present HTS Maglev systems by introducing ferromagnetic materials to onboard bulk superconductors. The principle here is to make use of the high magnetic permeability of ferromagnetic materials to alter the flux distribution of the permanent magnet guideway for the enhancement of magnetic field density at the position of the bulk superconductors. Ferromagnetic iron plates were added to the upper surface of bulk superconductors and their geometric and positioning effects on the maglev performance were investigated experimentally. Results show that the guidance performance (stability) was enhanced greatly for a particular setup when compared to the present maglev system which is helpful in the application where large guidance forces are needed such as maglev tracks with high degrees of curves.

“Thermal Stabilization Effect” of Al2O3 nano-dopants improves the high-temperature dielectric performance of polyimide

PubMed Central

Yang, Yang; He, Jinliang; Wu, Guangning; Hu, Jun

2015-01-01

Insulation performance of the dielectrics under extreme conditions always attracts widespread attention in electrical and electronic field. How to improve the high-temperature dielectric properties of insulation materials is one of the key issues in insulation system design of electrical devices. This paper studies the temperature-dependent corona resistance of polyimide (PI)/Al2O3 nanocomposite films under high-frequency square-wave pulse conditions. Extended corona resistant lifetime under high-temperature conditions is experimentally observed in the 2 wt% nanocomposite samples. The “thermal stabilization effect” is proposed to explain this phenomenon which attributes to a new kind of trap band caused by nanoparticles. This effect brings about superior space charge characteristics and corona resistance under high temperature with certain nano-doping concentration. The proposed theory is experimentally demonstrated by space charge analysis and thermally stimulated current (TSC) tests. This discovered effect is of profound significance on improving high-temperature dielectric properties of nanocomposites towards various applications. PMID:26597981

Optimization of polarization compensating interlayers for InGaN/GaN MQW solar cells

NASA Astrophysics Data System (ADS)

Saini, Basant; Sharma, Sugandha; Kaur, Ravinder; Pal, Suchandan; Kapoor, Avinashi

2018-05-01

Optimization of polarization compensating interlayer (PCI) is performed numerically to improve the photovoltaic properties of InGaN/GaN multiple quantum well solar cell (MQWSC). Simulations are performed to investigate the effect of change in thickness and composition of PCI on the performance of cell. Short circuit current density is increased as we increase the thickness of the PCI. Changing the constitution of PCI not only mitigates the negative effects of polarization-induced electric fields but also reduces the high potential barrier existing at the QW/p-GaN hetero-interface. This claim is validated by the performance shown by the cell containing optimized PCI, as it shows an improved efficiency of 1.54 % under AM1.5G illumination.

Fabrication of amorphous InGaZnO thin-film transistor with solution processed SrZrO3 gate insulator

NASA Astrophysics Data System (ADS)

Takahashi, Takanori; Oikawa, Kento; Hoga, Takeshi; Uraoka, Yukiharu; Uchiyama, Kiyoshi

2017-10-01

In this paper, we describe a method of fabrication of thin film transistors (TFTs) with high dielectric constant (high-k) gate insulator by a solution deposition. We chose a solution processed SrZrO3 as a gate insulator material, which possesses a high dielectric constant of 21 with smooth surface. The IGZO-TFT with solution processed SrZrO3 showed good switching property and enough saturation features, i.e. field effect mobility of 1.7cm2/Vs, threshold voltage of 4.8V, sub-threshold swing of 147mV/decade, and on/off ratio of 2.3×107. Comparing to the TFTs with conventional SiO2 gate insulator, the sub-threshold swing was improved by smooth surface and high field effect due to the high dielectric constant of SrZrO3. These results clearly showed that use of solution processed high-k SrZrO3 gate insulator could improve sub-threshold swing. In addition, the residual carbon originated from organic precursors makes TFT performances degraded.

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

NASA Astrophysics Data System (ADS)

Held, Martin; Schießl, Stefan P.; Miehler, Dominik; Gannott, Florentina; Zaumseil, Jana

2015-08-01

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfOx) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100-300 nF/cm2) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfOx dielectrics.

Structural, optical, and improved field-emission properties of tetrapod-shaped Sn-doped ZnO nanostructures synthesized via thermal evaporation.

PubMed

Zhou, Xiongtu; Lin, Tihang; Liu, Yuhui; Wu, Chaoxing; Zeng, Xiangyao; Jiang, Dong; Zhang, Yong-ai; Guo, Tailiang

2013-10-23

High-quality tetrapod-shaped Sn-doped ZnO (T-SZO) nanostructures have been successfully synthesized via the thermal evaporation of mixed Zn and Sn powder. The effects of the Sn dopant on the morphology, microstructure, optical, and field-emission (FE) properties of T-SZO were investigated. It was found that the growth direction of the legs of T-SZO is parallel to the [0001] crystal c-axis direction and that the incorporation of Sn in the ZnO matrix increases the aspect ratio of the tetrapods, leads to blue shift in the UV region, and considerably improves the FE performance. The results also show that tetrapod cathodes with around a 0.84 atom % Sn dosage have the best FE properties, with a turn-on field of 1.95 V/μm, a current density of 950 μA/cm2 at a field of 4.5 V/μm, and a field-enhancement factor as high as 9556.

MCP-PMT studies at the High-B test facility at Jefferson Lab

DOE PAGES

Ilieva, Yordanka; Allison, Lee; Cao, Tongtong; ...

2016-03-30

Here we present preliminary results for the gain performance of commercially available 3- mum and 6- mum pore-size single-anode microchannel-plate photomultipliers (MCP PMTs) in magnetic fields up to 5 T and for various orientations of the sensor relative to the field direction. The measurements were performed at Thomas Jefferson National Accelerator Facility in Newport News, VA. Our results show that smaller-pore-size PMTs have better gain performance in magnetic fields. At various angles, the shape of the gain dependence on the strength of the magnetic field strongly depends on the type of the sensor. Also, for each sensor, the azimuthal dependencemore » is strongly correlated with the polar angle. Overall, the sensors exhibit a reasonable performance up to 2 T, although that upper limit depends on the sensor, the applied high voltage, and the orientation of the sensor relative to the field. To optimize the operational and design parameters of MCP PMTs for performance in high magnetic fields, further measurements and simulation studies will be pursued. Furthermore, our studies are part of an R&D for development of a Detector of Internally Reflected Cherenkov Light for the central detector of a future U.S. Electron Ion Collider.« less

Strain sensors for high field pulse magnets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinez, Christian; Zheng, Yan; Easton, Daniel

2009-01-01

In this paper we present an investigation into several strain sensing technologies that are being considered to monitor mechanical deformation within the steel reinforcement shells used in high field pulsed magnets. Such systems generally operate at cryogenic temperatures to mitigate heating issues that are inherent in the coils of nondestructive, high field pulsed magnets. The objective of this preliminary study is to characterize the performance of various strain sensing technologies at liquid nitrogen temperatures (-196 C). Four sensor types are considered in this investigation: fiber Bragg gratings (FBG), resistive foil strain gauges (RFSG), piezoelectric polymers (PVDF), and piezoceramics (PZT). Threemore » operational conditions are considered for each sensor: bond integrity, sensitivity as a function of temperature, and thermal cycling effects. Several experiments were conducted as part of this study, investigating adhesion with various substrate materials (stainless steel, aluminum, and carbon fiber), sensitivity to static (FBG and RFSG) and dynamic (RFSG, PVDF and PZT) load conditions, and sensor diagnostics using PZT sensors. This work has been conducted in collaboration with the National High Magnetic Field Laboratory (NHMFL), and the results of this study will be used to identify the set of sensing technologies that would be best suited for integration within high field pulsed magnets at the NHMFL facility.« less

[Influence of 1, 2-dichloroethane on open field behavior and levels of neurotransmitters in brain of mice].

PubMed

Qi, Ying; Shi, Lei; Gao, Lan-Yue; Wang, Gao-Yang; Li, Ge-Xin; Lv, Xiu-Qiang; Jin, Ya-Ping

2011-06-01

To explore the effects of 1,2-dichloroethane (1,2-DCE) on the behavior and the brain neurotransmitter levels in mice. Thirty mice were randomly divided into four groups, which were control group and groups of low, middle and high exposure (225, 450 and 900 mg/m3) to 1,2-DCE for 10 days (3.5 h a day) by inhalation. After the last exposure, the open field test was performed immediately. After exposure all mice were killed and the brain tissues were taken up rapidly. The levels of aspartate (Asp), glutamate (Glu) and gamma-aminobutyric acid (GABA) in the brain were detected by high performance liquid chromatography (HPLC). Levels of Asp and Glu in all exposure groups increased with doses. As compared to the control group, levels of Glu in all exposure groups increased significantly (P < 0.05). Levels of GABA in the low exposure group were significantly lower than those in control group, but those in the high exposure group were significantly higher than those in control group. The results of the open field test showed that effect of low exposure to 1,2-DCE on the behavior was stimulant, but the high exposure to 1,2-DCE inhibited behavior of exploration, excitement and sport. Subacute exposure to 1,2-DCE could result in the change of amino acid neurotransmitter content and ratio in the brain, thereby change the behavior of mice appeared, which might be the mechanism of neurotoxicity caused by 1,2-DCE in part.

Performance, Performance System, and High Performance System

ERIC Educational Resources Information Center

Jang, Hwan Young

2009-01-01

This article proposes needed transitions in the field of human performance technology. The following three transitions are discussed: transitioning from training to performance, transitioning from performance to performance system, and transitioning from learning organization to high performance system. A proposed framework that comprises…

14 CFR 23.1308 - High-intensity Radiated Fields (HIRF) Protection.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 14 Aeronautics and Space 1 2011-01-01 2011-01-01 false High-intensity Radiated Fields (HIRF... Equipment General § 23.1308 High-intensity Radiated Fields (HIRF) Protection. (a) Except as provided in paragraph (d) of this section, each electrical and electronic system that performs a function whose failure...

14 CFR 23.1308 - High-intensity Radiated Fields (HIRF) Protection.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false High-intensity Radiated Fields (HIRF... Equipment General § 23.1308 High-intensity Radiated Fields (HIRF) Protection. (a) Except as provided in paragraph (d) of this section, each electrical and electronic system that performs a function whose failure...

Integrating mobile GIS, real-time D-GPS, and high-resolution satellite imagery for land use patrolling

NASA Astrophysics Data System (ADS)

Xu, Zhu; Chen, Xianwei; Liu, Guoxiang; Chen, Tao; Meng, Yanzi; Jiang, Lianjiang; Wang, Mei

2009-06-01

The illegal use of lands has come to impose a serious threat to land resources protection and land use plan implementation in China. Land use patrolling has long been proven to be an effective means for detection, investigation and prevention of illegal land use. However, land use patrolling performed in the traditional way is laborious and cumbersome. Central and regional government authorities are both seeking high-technology solution to enhance this job. In an effort to satisfy such requirements, we have designed and implemented an integrated system of mobile GIS, D-GPS and wireless Internet to assist land use patrolling and investigation. Details of this system are presented in this paper, including those of the system architecture, the field work-assisting subsystem, the Internet-based D-GPS subsystem ... etc. The main finding is that such technology is indispensable for land use patrolling and similar tasks. It can dramatically promote the patrolling or field work efficiency and tightly connect field and office staff to better perform the mission. Problems encountered in building the system are also discussed.

Polymer stabilized liquid crystals: Topology-mediated electro-optical behavior and applications

NASA Astrophysics Data System (ADS)

Weng, Libo

There has been a wide range of liquid crystal polymer composites that vary in polymer concentration from as little as 3 wt.% (polymer stabilized liquid crystal) to as high as 60 wt.% (polymer dispersed liquid crystals). In this dissertation, an approach of surface polymerization based on a low reactive monomer concentration about 1 wt.% is studied in various liquid crystal operation modes. The first part of dissertation describes the development of a vertical alignment (VA) mode with surface polymer stabilization, and the effects of structure-performance relationship of reactive monomers (RMs) and polymerization conditions on the electro-optical behaviors of the liquid crystal device has been explored. The polymer topography plays an important role in modifying and enhancing the electro-optical performance of stabilized liquid crystal alignment. The enabling surface-pinned polymer stabilized vertical alignment (PSVA) approach has led to the development of high-performance and fast-switching displays with controllable pretilt angle, increase in surface anchoring energy, high optical contrast and fast response time. The second part of the dissertation explores a PSVA mode with in-plane switching (IPS) and its application for high-efficiency and fast-switching phase gratings. The diffraction patterns and the electro-optical behaviors including diffraction efficiency and response time are characterized. The diffraction grating mechanism and performance have been validated by computer simulation. Finally, the advantages of surface polymerization approach such as good optical contrast and fast response time have been applied to the fringe-field switching (FFS) system. The concentration of reactive monomer on the electro-optical behavior of the FFS cells is optimized. The outstanding electro-optical results and mechanism of increase in surface anchoring strength are corroborated by the director field simulation. The density and topology of nanoscale polymer protrusions are analyzed and confirmed by morphological study. The developed high-performance polymer-stabilized fringe-field-switching (PS-FFS) could open new types of device applications.

'Squeezing' near-field thermal emission for ultra-efficient high-power thermophotovoltaic conversion.

PubMed

Karalis, Aristeidis; Joannopoulos, J D

2016-07-01

We numerically demonstrate near-field planar ThermoPhotoVoltaic systems with very high efficiency and output power, at large vacuum gaps. Example performances include: at 1200 °K emitter temperature, output power density 2 W/cm(2) with ~47% efficiency at 300 nm vacuum gap; at 2100 °K, 24 W/cm(2) with ~57% efficiency at 200 nm gap; and, at 3000 °K, 115 W/cm(2) with ~61% efficiency at 140 nm gap. Key to this striking performance is a novel photonic design forcing the emitter and cell single modes to cros resonantly couple and impedance-match just above the semiconductor bandgap, creating there a 'squeezed' narrowband near-field emission spectrum. Specifically, we employ surface-plasmon-polariton thermal emitters and silver-backed semiconductor-thin-film photovoltaic cells. The emitter planar plasmonic nature allows for high-power and stable high-temperature operation. Our simulations include modeling of free-carrier absorption in both cell electrodes and temperature dependence of the emitter properties. At high temperatures, the efficiency enhancement via resonant mode cross-coupling and matching can be extended to even higher power, by appropriately patterning the silver back electrode to enforce also an absorber effective surface-plasmon-polariton mode. Our proposed designs can therefore lead the way for mass-producible and low-cost ThermoPhotoVoltaic micro-generators and solar cells.

‘Squeezing’ near-field thermal emission for ultra-efficient high-power thermophotovoltaic conversion

PubMed Central

Karalis, Aristeidis; Joannopoulos, J. D.

2016-01-01

We numerically demonstrate near-field planar ThermoPhotoVoltaic systems with very high efficiency and output power, at large vacuum gaps. Example performances include: at 1200 °K emitter temperature, output power density 2 W/cm2 with ~47% efficiency at 300 nm vacuum gap; at 2100 °K, 24 W/cm2 with ~57% efficiency at 200 nm gap; and, at 3000 °K, 115 W/cm2 with ~61% efficiency at 140 nm gap. Key to this striking performance is a novel photonic design forcing the emitter and cell single modes to cros resonantly couple and impedance-match just above the semiconductor bandgap, creating there a ‘squeezed’ narrowband near-field emission spectrum. Specifically, we employ surface-plasmon-polariton thermal emitters and silver-backed semiconductor-thin-film photovoltaic cells. The emitter planar plasmonic nature allows for high-power and stable high-temperature operation. Our simulations include modeling of free-carrier absorption in both cell electrodes and temperature dependence of the emitter properties. At high temperatures, the efficiency enhancement via resonant mode cross-coupling and matching can be extended to even higher power, by appropriately patterning the silver back electrode to enforce also an absorber effective surface-plasmon-polariton mode. Our proposed designs can therefore lead the way for mass-producible and low-cost ThermoPhotoVoltaic micro-generators and solar cells. PMID:27363522

Understanding charge transport in lead iodide perovskite thin-film field-effect transistors

PubMed Central

Senanayak, Satyaprasad P.; Yang, Bingyan; Thomas, Tudor H.; Giesbrecht, Nadja; Huang, Wenchao; Gann, Eliot; Nair, Bhaskaran; Goedel, Karl; Guha, Suchi; Moya, Xavier; McNeill, Christopher R.; Docampo, Pablo; Sadhanala, Aditya; Friend, Richard H.; Sirringhaus, Henning

2017-01-01

Fundamental understanding of the charge transport physics of hybrid lead halide perovskite semiconductors is important for advancing their use in high-performance optoelectronics. We use field-effect transistors (FETs) to probe the charge transport mechanism in thin films of methylammonium lead iodide (MAPbI3). We show that through optimization of thin-film microstructure and source-drain contact modifications, it is possible to significantly minimize instability and hysteresis in FET characteristics and demonstrate an electron field-effect mobility (μFET) of 0.5 cm2/Vs at room temperature. Temperature-dependent transport studies revealed a negative coefficient of mobility with three different temperature regimes. On the basis of electrical and spectroscopic studies, we attribute the three different regimes to transport limited by ion migration due to point defects associated with grain boundaries, polarization disorder of the MA+ cations, and thermal vibrations of the lead halide inorganic cages. PMID:28138550

Numerical Computation of Electric Field and Potential Along Silicone Rubber Insulators Under Contaminated and Dry Band Conditions

NASA Astrophysics Data System (ADS)

Arshad; Nekahi, A.; McMeekin, S. G.; Farzaneh, M.

2016-09-01

Electrical field distribution along the insulator surface is considered one of the important parameters for the performance evaluation of outdoor insulators. In this paper numerical simulations were carried out to investigate the electric field and potential distribution along silicone rubber insulators under various polluted and dry band conditions. Simulations were performed using commercially available simulation package Comsol Multiphysics based on the finite element method. Various pollution severity levels were simulated by changing the conductivity of pollution layer. Dry bands of 2 cm width were inserted at the high voltage end, ground end, middle part, shed, sheath, and at the junction of shed and sheath to investigate the effect of dry band location and width on electric field and potential distribution. Partial pollution conditions were simulated by applying pollution layer on the top and bottom surface respectively. It was observed from the simulation results that electric field intensity was higher at the metal electrode ends and at the junction of dry bands. Simulation results showed that potential distribution is nonlinear in the case of clean and partially polluted insulator and linear for uniform pollution layer. Dry band formation effect both potential and electric field distribution. Power dissipated along the insulator surface and the resultant heat generation was also studied. The results of this study could be useful in the selection of polymeric insulators for contaminated environments.

New auto-tuning technique for the hydrogen maser

NASA Technical Reports Server (NTRS)

Sydnor, R. L.; Maleki, L.

1983-01-01

Auto-tuning of the maser cavity compensates for cavity pulling effect, and other sources of contribution to the long term frequency drift. Schemes previously proposed for the maser cavity auto-tuning can have adverse effects on the performance of the maser. A new scheme is proposed based on the phase relationship between the electric and the magnetic fields inside the cavity. This technique has the desired feature of auto-tuning the cavity with a very high sensitivity and without disturbing the maser performance. Some approaches for the implementation of this scheme and possible areas of difficulty are examined.

Insecticide resistance and diminished secondary kill performance of bait formulations against German cockroaches (Dictyoptera: Blattellidae)

PubMed Central

Ko, Alexander E.; Bieman, Donald N.; Schal, Coby; Silverman, Jules

2015-01-01

BACKGROUND Bait formulations are considered the most effective method for reducing German cockroach infestations. An important property of some bait formulations is secondary kill, whereby active ingredient is translocated in insect-produced residues throughout the cockroach population, especially affecting relatively sedentary early instar nymphs. RESULTS Blattella germanica was collected from a location where baits containing hydramethylnon, fipronil, or indoxacarb became ineffective, and these AIs were topically applied to adult males. Results revealed the first evidence for hydramethylnon resistance, moderate resistance to fipronil and extremely high resistance to indoxacarb. Insecticide residues excreted by field-collected males that ingested commercial baits effectively killed nymphs of an insecticide-susceptible laboratory strain of B. germanica but failed to kill most nymphs of the field-collected strain. CONCLUSIONS We report three novel findings: 1) The first evidence for hydramethylnon resistance in any insect; 2) extremely high levels of indoxacarb resistance in a field population; and 3) reduced secondary mortality in an insecticide-resistant field-collected strain of B. germanica. We suggest that while secondary mortality is considered to be advantageous in cockroach interventions, the ingestion of sublethal doses of AI by nymphs may select for high insecticide resistance by increasing the frequency of AI resistance alleles within the population. PMID:26689433

High-performance field-effect transistors based on gadolinium doped indium oxide nanofibers and their application in logic gate

NASA Astrophysics Data System (ADS)

Wang, Chao; Meng, You; Guo, Zidong; Shin, Byoungchul; Liu, Guoxia; Shan, Fukai

2018-05-01

One-dimensional metal oxide nanofibers have been regarded as promising building blocks for large area low cost electronic devices. As one of the representative metal oxide semiconducting materials, In2O3 based materials have attracted much interest due to their excellent electrical and optical properties. However, most of the field-effect transistors (FETs) based on In2O3 nanofibers usually operate in a depletion mode, which lead to large power consumption and a complicated integrated circuit design. In this report, gadolinium (Gd) doped In2O3 (InGdO) nanofibers were fabricated by electrospinning and applied as channels in the FETs. By optimizing the doping concentration and the nanofiber density, the device performance could be precisely manipulated. It was found that the FETs based on InGdO nanofibers, with a Gd doping concentration of 3% and a nanofiber density of 2.9 μm-1, exhibited the best device performance, including a field-effect mobility (μFE) of 2.83 cm2/V s, an on/off current ratio of ˜4 × 108, a threshold voltage (VTH) of 5.8 V, and a subthreshold swing (SS) of 2.4 V/decade. By employing the high-k ZrOx thin films as the gate dielectrics in the FETs, the μFE, VTH and SS can be further improved to be 17.4 cm2/V s, 0.7 V and 160 mV/decade, respectively. Finally, an inverter based on the InGdO nanofibers/ZrOx FETs was constructed and a gain of ˜11 was achieved.

[When and how is medical teleconsultation to doctors practising in remote areas of developing countries convenient and reliable? About eight clinical cases].

PubMed

Campanella, Nando; Francioni, Orestina; Taus, Marina; Giovagnoli, Moreno; Morosini, Pierpaolo

2004-01-01

A poorly equipped internal medicine doctor (IMD), practising in remote areas of developing countries, can be assisted with expertise teleconsultations by using the common analogical telephone lines. By that way, the clinical cases he challenges became multidisciplinary and the success of the treatment enhanced. Eight cases are reported as examples. The expertise is made up by eight remote-access experts on different medical fields. The effectiveness of the support of the consultants is compared one to the other. In laboratory, dermatology and, partly, cyto-pathology fields the teleconsultations are reliable and not time-consuming, for the key tool is the digital picture sent by e-mailing. In cardiology (heart ultrasound scan) and radiology fields both effectiveness and benefit-cost ratio are disputable. Heart ultrasound scan is a dynamic test and filming is needed to provide the consultant with good records. In radiology field, the upper digestive tract X-ray scan is usually carried out with few shots, due to the unsustainable charges on the patient. That matter impairs the consultant's effectiveness to support. Although the black-outs of the transmission were common throughout IMD-consultant videoconferences, the physical examination of the patient, performed by the IMC under consultant's direct supervision, is highly supportive both in neurology and paediatric fields. The physiotherapist's show of physical rehabilitation exercises by videoconference is highly supportive as well.

Ferroelectric-induced carrier modulation for ambipolar transition metal dichalcogenide transistors

NASA Astrophysics Data System (ADS)

Yin, Lei; Wang, Zhenxing; Wang, Feng; Xu, Kai; Cheng, Ruiqing; Wen, Yao; Li, Jie; He, Jun

2017-03-01

For multifarious electronic and optoelectronic applications, it is indispensable exploration of stable and simple method to modulate electrical behavior of transition metal dichalcogenides (TMDs). In this study, an effective method to adjust the electrical properties of ambipolar TMDs is developed by introducing the dipole electric field from poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric polymer. The transition from ambipolar to p-type conductive characteristics is realized, and the transistor performances are also significantly enhanced. Hole density of MoTe2- and WSe2-based back-gate field effect transistors increases by 4.4 and 2.5 times. Moreover, the corresponding hole mobilities are strikingly improved from 0.27 to 10.7 cm2 V-1 s-1 and from 1.6 to 59.8 cm2 V-1 s-1, respectively. After optimizing, p-channel MoTe2 phototransistors present ultrahigh responsivity of 3521 A/W, which is superior to most layered phototransistors. The remarkable control of conductive type, carrier concentration, and field-effect mobility of ambipolar TMDs via P(VDF-TrFE) treatment paves a way for realization of high-performance and versatile electronic and optoelectronic devices.

Noise analysis in numerical modeling of crossed fields microwave tubes

NASA Astrophysics Data System (ADS)

BłaŻejewicz, Mariusz; Woźniak, Martyna; Szkop, Emil; RóŻycki, Andrzej; Rychlewski, Michał; Baczewski, Dariusz; Laskowski, Dariusz

2018-04-01

One of the most important parameters that characterize microwave tubes with crossed fields, both amplifiers (CFA), and generating tubes like magnetrons is the noise level. This type of tubes are characterized by relatively high noise levels, which is the main factor limiting their current use in radar transmitters. The main source of noise in microwave tubes of this type is the dispersion of the energy of electrons that are in phase with the spatial wave of the electromagnetic field propagating in the delay line (in case of an amplitron) or in the resonant structure (in case of a magnetron).The results of the research presented in the article concern the technique of determination of Signal to Noise Ratio (SNR) based on the analysis of results obtained during the numerical simulations of the effect of electric charge on a high frequency electromagnetic field. Signal to noise ratio was determined by analysing in-phase and quadrature data recorded in the high frequency simulation. In order to assess the accuracy of the method under investigation, the results from the noise analysis obtained from numerical calculations were compared with the results obtained from real tube measurements performed by a spectrum analyser. On the basis of the research, it appears that performing analysis of noise generated in the interaction area may be useful for preliminary evaluation of the tube at the design stage.

Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2009-01-01

Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures over the range of -190 C to +225 C in terms of its voltage/current characteristic curves. The test temperatures included +22, -50, -100, -150, -175, -190, +50, +100, +150, +175, +200, and +225 C. Limited thermal cycling testing was also performed on the device. These tests consisted of subjecting the transistor to a total of twelve thermal cycles between -190 C and +225 C. A temperature rate of change of 10 C/min and a soak time at the test temperature of 10 minutes were used throughout this work. Post-cycling measurements were also performed at selected temperatures. In addition, re-start capability at extreme temperatures, i.e. power switched on while the device was soaking for a period of 20 minutes at the test temperatures of -190 C and +225 C, was investigated.

Impact of device engineering on analog/RF performances of tunnel field effect transistors

NASA Astrophysics Data System (ADS)

Vijayvargiya, V.; Reniwal, B. S.; Singh, P.; Vishvakarma, S. K.

2017-06-01

The tunnel field effect transistor (TFET) and its analog/RF performance is being aggressively studied at device architecture level for low power SoC design. Therefore, in this paper we have investigated the influence of the gate-drain underlap (UL) and different dielectric materials for the spacer and gate oxide on DG-TFET (double gate TFET) and its analog/RF performance for low power applications. Here, it is found that the drive current behavior in DG-TFET with a UL feature while implementing dielectric material for the spacer is different in comparison to that of DG-FET. Further, hetero gate dielectric-based DG-TFET (HGDG-TFET) is more resistive against drain-induced barrier lowering (DIBL) as compared to DG-TFET with high-k (HK) gate dielectric. Along with that, as compared to DG-FET, this paper also analyses the attributes of UL and dielectric material on analog/RF performance of DG-TFET in terms of transconductance (gm ), transconductance generation factor (TGF), capacitance, intrinsic resistance (Rdcr), cut-off frequency (F T), and maximum oscillation frequency (F max). The LK spacer-based HGDG-TFET with a gate-drain UL has the potential to improve the RF performance of device.

A simple method to eliminate shielding currents for magnetization perpendicular to superconducting tapes wound into coils

NASA Astrophysics Data System (ADS)

Kajikawa, Kazuhiro; Funaki, Kazuo

2011-12-01

Application of an external AC magnetic field parallel to superconducting tapes helps in eliminating the magnetization caused by the shielding current induced in the flat faces of the tapes. This method helps in realizing a magnet system with high-temperature superconducting tapes for magnetic resonance imaging (MRI) and nuclear magnetic resonance (NMR) applications. The effectiveness of the proposed method is validated by numerical calculations carried out using the finite-element method and experiments performed using a commercially available superconducting tape. The field uniformity for a single-layer solenoid coil after the application of an AC field is also estimated by a theoretical consideration.

Numerical simulation of electromagnetic fields and impedance of CERN LINAC4 H(-) source taking into account the effect of the plasma.

PubMed

Grudiev, A; Lettry, J; Mattei, S; Paoluzzi, M; Scrivens, R

2014-02-01

Numerical simulation of the CERN LINAC4 H(-) source 2 MHz RF system has been performed taking into account a realistic geometry from 3D Computer Aided Design model using commercial FEM high frequency simulation code. The effect of the plasma has been added to the model by the approximation of a homogenous electrically conducting medium. Electric and magnetic fields, RF power losses, and impedance of the circuit have been calculated for different values of the plasma conductivity. Three different regimes have been found depending on the plasma conductivity: (1) Zero or low plasma conductivity results in RF electric field induced by the RF antenna being mainly capacitive and has axial direction; (2) Intermediate conductivity results in the expulsion of capacitive electric field from plasma and the RF power coupling, which is increasing linearly with the plasma conductivity, is mainly dominated by the inductive azimuthal electric field; (3) High conductivity results in the shielding of both the electric and magnetic fields from plasma due to the skin effect, which reduces RF power coupling to plasma. From these simulations and measurements of the RF power coupling on the CERN source, a value of the plasma conductivity has been derived. It agrees well with an analytical estimate calculated from the measured plasma parameters. In addition, the simulated and measured impedances with and without plasma show very good agreement as well demonstrating validity of the plasma model used in the RF simulations.

Magnetic Field Tailored Annular Hall Thruster with Anode Layer

NASA Astrophysics Data System (ADS)

Lee, Seunghun; Kim, Holak; Kim, Junbum; Lim, Youbong; Choe, Wonho; Korea Institute of Materials Science Collaboration

2016-09-01

Plasma propulsion system is one of the key components for advanced missions of satellites as well as deep space exploration. A typical plasma propulsion system is Hall effect thruster that uses crossed electric and magnetic fields to ionize a propellant gas and to accelerate the ionized gas to generate momentum. In Hall thruster plasmas, magnetic field configuration is important due to the fact that electron confinement in the electromagnetic fields affects both plasma and ion beam characteristics as well as thruster performance parameters including thrust, specific impulse, power efficiency, and life time. In this work, development of an anode layer Hall thruster (TAL) with magnetic field tailoring has been attempted. The TAL is possible to keep discharge in 1 to 2 kilovolts of anode voltage, which is useful to obtain high specific impulse. The magnetic field tailoring is used to minimize undesirable heat dissipation and secondary electron emission from the wall surrounding the plasma. We will report 3 W and 200 W thrusters performances measured by a pendulum thrust stand according to the magnetic field configuration. Also, the measured result will be compared with the plasma diagnostics conducted by an angular Faraday probe, a retarding potential analyzer, and a ExB probe.

The fundamental downscaling limit of field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mamaluy, Denis, E-mail: mamaluy@sandia.gov; Gao, Xujiao

2015-05-11

We predict that within next 15 years a fundamental down-scaling limit for CMOS technology and other Field-Effect Transistors (FETs) will be reached. Specifically, we show that at room temperatures all FETs, irrespective of their channel material, will start experiencing unacceptable level of thermally induced errors around 5-nm gate lengths. These findings were confirmed by performing quantum mechanical transport simulations for a variety of 6-, 5-, and 4-nm gate length Si devices, optimized to satisfy high-performance logic specifications by ITRS. Different channel materials and wafer/channel orientations have also been studied; it is found that altering channel-source-drain materials achieves only insignificant increasemore » in switching energy, which overall cannot sufficiently delay the approaching downscaling limit. Alternative possibilities are discussed to continue the increase of logic element densities for room temperature operation below the said limit.« less

The fundamental downscaling limit of field effect transistors

DOE PAGES

Mamaluy, Denis; Gao, Xujiao

2015-05-12

We predict that within next 15 years a fundamental down-scaling limit for CMOS technology and other Field-Effect Transistors (FETs) will be reached. Specifically, we show that at room temperatures all FETs, irrespective of their channel material, will start experiencing unacceptable level of thermally induced errors around 5-nm gate lengths. These findings were confirmed by performing quantum mechanical transport simulations for a variety of 6-, 5-, and 4-nm gate length Si devices, optimized to satisfy high-performance logic specifications by ITRS. Different channel materials and wafer/channel orientations have also been studied; it is found that altering channel-source-drain materials achieves only insignificant increasemore » in switching energy, which overall cannot sufficiently delay the approaching downscaling limit. Alternative possibilities are discussed to continue the increase of logic element densities for room temperature operation below the said limit.« less

Effects of electric field on the properties of 2D topological insulators

NASA Astrophysics Data System (ADS)

Salmankurt, Bahadır; Gürel, Hikmet Hakan

2018-02-01

Two-Dimensional (2D) topological insulators (TIs), are new and promising materials for the applications such as spintronics and optoelectronics due to their unique surface states that are topologically protected and thus robust against nonmagnetic impurities and disorders. The existence of these remarkable electronic states in TIs can be attributed to the large spin-orbit (SO) coupling. The researchers have paid attention to Bi based two-dimensional materials due to high SO coupling effect. Among them, GaBi, InBi, GaBi3 and InBi3 are good candidates for 2D Tls materials. Although there are a lot of studies in these 2D Tls, a detailed understanding of the effect of E-Field is lacking. Applying external E-field can change the electronic properties, which may enable to realize the change on the properties of the materials. We have performed theoretical study of GaBi, InBi, GaBi3 and InBi3 to investigate the effect of E-field to explore band structure, charge distribution and geometries.

Training Needs for High Performance in the Automotive Industry.

ERIC Educational Resources Information Center

Clyne, Barry; And Others

A project was conducted in Australia to identify the training needs of the emerging industry required to support the development of the high performance areas of the automotive machining and reconditioning field especially as it pertained to auto racing. Data were gathered through a literature search, interviews with experts in the field, and…

Extrapolating non-target risk of Bt crops from laboratory to field.

PubMed

Duan, Jian J; Lundgren, Jonathan G; Naranjo, Steve; Marvier, Michelle

2010-02-23

The tiered approach to assessing ecological risk of insect-resistant transgenic crops assumes that lower tier laboratory studies, which expose surrogate non-target organisms to high doses of insecticidal proteins, can detect harmful effects that might be manifested in the field. To test this assumption, we performed meta-analyses comparing results for non-target invertebrates exposed to Bacillus thuringiensis (Bt) Cry proteins in laboratory studies with results derived from independent field studies examining effects on the abundance of non-target invertebrates. For Lepidopteran-active Cry proteins, laboratory studies correctly predicted the reduced field abundance of non-target Lepidoptera. However, laboratory studies incorporating tri-trophic interactions of Bt plants, herbivores and parasitoids were better correlated with the decreased field abundance of parasitoids than were direct-exposure assays. For predators, laboratory tri-trophic studies predicted reduced abundances that were not realized in field studies and thus overestimated ecological risk. Exposure to Coleopteran-active Cry proteins did not significantly reduce the laboratory survival or field abundance of any functional group examined. Our findings support the assumption that laboratory studies of transgenic insecticidal crops show effects that are either consistent with, or more conservative than, those found in field studies, with the important caveat that laboratory studies should explore all ecologically relevant routes of exposure.

Effect of Biochar on Greenhouse Gas Emissions and Nitrogen Cycling in Laboratory and Field Experiments

NASA Astrophysics Data System (ADS)

Hagemann, Nikolas; Harter, Johannes; Kaldamukova, Radina; Ruser, Reiner; Graeff-Hönninger, Simone; Kappler, Andreas; Behrens, Sebastian

2014-05-01

The extensive use of nitrogen (N) fertilizers in agriculture is a major source of anthropogenic N2O emissions contributing 8% to global greenhouse gas emissions. Soil biochar amendment has been suggested as a means to reduce both CO2 and non-CO2 greenhouse gas emissions. The reduction of N2O emissions by biochar has been demonstrated repeatedly in field and laboratory experiments. However, the mechanisms of the reduction remain unclear. Further it is not known how biochar field-weathering affects GHG emissions and how agro-chemicals, such as the nitrification inhibitor 3,4-dimethylpyrazole phosphate (DMPP), that is often simultaneously applied together with commercial N-fertilizers, impact nitrogen transformation and N2O emissions from biochar amended soils. In order investigate the duration of the biochar effect on soil N2O emissions and its susceptibility to DMPP application we performed a microcosm and field study with a high-temperature (400 ° C) beech wood derived biochar (60 t ha-1 and 5 % (w/w) biochar in the field and microcosms, respectively). While the field site contained the biochar already for three years, soil and biochar were freshly mixed for the laboratory microcosm experiments. In both studies we quantified GHG emissions and soil nitrogen speciation (nitrate, nitrite, ammonium). While the field study was carried out over the whole vegetation period of the sunflower Helianthus annuus L., soil microcosm experiments were performed for up to 9 days at 28° C. In both experiments a N-fertilizer containing DMPP was applied either before planting of the sunflowers or at the beginning of soil microcosms incubation. Laboratory microcosm experiments were performed at 60% water filled pore space reflecting average field conditions. Our results show that biochar effectively reduced soil N2O emissions by up to 60 % in the field and in the soil microcosm experiments. No significant differences in N2O emission mitigation potential between field-aged and fresh biochar were observed for the specific biochar used in this study. N2O emission reduction occurred even in the presence of DMPP in the field and in the laboratory microcosms. Our results suggest that simultaneous measurements of soil samples from the same field site in the laboratory yield similar biochar effects to those quantified in the field and that the mechanisms of N2O mitigation seem to be independent of plant growth and application of the commercial nitrification inhibitor DMPP.

Study of the performance of Micromegas detectors in magnetic field

NASA Astrophysics Data System (ADS)

Dimitrios, Sampsonidis

2018-02-01

Resistive Micromegas (MICRO MEsh GAseous Structure) detectors have been chosen by the ATLAS collaboration at LHC for the high luminosity upgrade, due to their capability to maintain full efficiency and high spatial resolution at high occupancy, for tracking muons in the forward region of the detector. The Inner Muon Station, in the high-rapidity region, the so called New Small Wheel (NSW), will be composed of micromegas detectors that will have to maintain good performance in the presence of magnetic field of up to about 0.3 T. The response of micromegas detectors is affected by the magnetic field, where the deflection of the drift electrons is described by the Lorentz angle, resulting in a bias in the reconstructed track position. Several test-beam campaigns have been performed to test the behaviour of small size resistive micromegas prototypes (10×10 cm2) in magnetic fields up to 1 T, using high momentum muon and hadron beams at CERN. These studies are performed in order to validate the capability of the chambers to provide unbiased tracks in the NSW conditions. Measurements of the Lorentz angle and drift velocity as a function of the magnetic field are presented and both are compared to expectations based on Garfield-Magboltz simulations. Several methods to correct the position bias are applied, based on the chamber configuration or on the knowledge of the local value of the magnetic field. The results of these studies are presented together with an overall discussion of the Micromegas tracking capability in magnetic field.

Control of artificial pinning centers in REBCO coated conductors derived from the trifluoroacetate metal-organic deposition process

NASA Astrophysics Data System (ADS)

Izumi, T.; Nakaoka, K.

2018-07-01

The metal-organic deposition (MOD) process using metal trifluoroacetate salts (TFA) has the advantages of low-cost and high-scalability for the fabrication of REBa2Cu3O y (REBCO, RE: rare earth elements) superconducting coated conductors (CCs) with high critical current density, in principle, because of its non-vacuum process. For the magnetic applications of CCs such as motors, magnetic resonance imaging and superconducting magnetic energy storage, further improvement of superconducting performance under magnetic fields is required. However, the in-field superconducting performance of REBCO CCs derived from the TFA-MOD process had been inferior to those derived from the vapor-phase process. In order to improve the in-field performance, the size control of the artificial pinning centers has been known as an effective way. In the early stage, the BaZrO3 (BZO) material, which was one of the effective materials in the CCs by the vapor-phase process, was also introduced in the TFA-MOD-derived CCs. The unique feature of the BZO material in the TFA-MOD process is the shape. The BZO in the TFA-MOD process formed the particle shape, although in the vapor-phase process it has a rod shape with a long axis elongating along the thickness direction. In addition, a special heat treatment for refining the BZO particles was developed, which is called the ‘interim heat treatment’. This heating profile made the in-field characteristics higher, although they were still lower than those of the vapor-phase process. Then, the new MOD process including ‘ultra-thin once coating’ was recently developed for further refinement of the BZO particles. The characteristics of the new TFA-MOD-derived CCs in magnetic fields have become compatible with those of the CCs derived from the vapor-phase process.

Highly stable and finely tuned magnetic fields generated by permanent magnet assemblies.

PubMed

Danieli, E; Perlo, J; Blümich, B; Casanova, F

2013-05-03

Permanent magnetic materials are the only magnetic source that can be used to generate magnetic fields without power consumption or maintenance. Such stand-alone magnets are very attractive for many scientific and engineering areas, but they suffer from poor temporal field stability, which arises from the strong sensitivity of the magnetic materials and mechanical support to temperature variation. In this work, we describe a highly efficient method useful to cancel the temperature coefficient of permanent magnet assemblies in a passive and accurate way. It is based on the combination of at least two units made of magnetic materials with different temperature coefficients arranged in such a way that the ratio of the fields generated by each unit matches the ratio of their effective temperature coefficients defined by both the magnetic and mechanical contributions. Although typically available magnetic materials have negative temperature coefficients, the cancellation is achieved by aligning the fields generated by each unit in the opposite direction. We demonstrate the performance of this approach by stabilizing the field generated by a dipolar Halbach magnet, recently proposed to achieve high field homogeneity. Both the field drift and the homogeneity are monitored via nuclear magnetic resonance spectroscopy experiments. The results demonstrate the compatibility of the thermal compensation approach with existing strategies useful to fine-tune the spatial dependence of the field generated by permanent magnet arrays.

Proceedings of the 1985 NASA Ames Research Center's Ground-Effects Workshop

NASA Technical Reports Server (NTRS)

Mitchell, Kerry (Editor)

1987-01-01

The purpose of the workshop was to discuss the current technology base for aerodynamic ground effects and to establish directions for further research of advanced, high performance aircraft designs, particularly those concepts utilizing powered lift systems; e.g., V/STOL, ASTOVL, and STOL aircraft. Fourteen papers were presented in the following areas: suckdown and fountain effects in hover; STOL ground vortex and hot gas ingestion; and vortex lift and jet flaps in ground effect. These subject areas were chosen with regard to current activities in the field of aircraft ground effects research.

Electrophoretic Separation of Single Particles Using Nanoscale Thermoplastic Columns.

PubMed

Weerakoon-Ratnayake, Kumuditha M; Uba, Franklin I; Oliver-Calixte, Nyoté J; Soper, Steven A

2016-04-05

Phenomena associated with microscale electrophoresis separations cannot, in many cases, be applied to the nanoscale. Thus, understanding the electrophoretic characteristics associated with the nanoscale will help formulate relevant strategies that can optimize the performance of separations carried out on columns with at least one dimension below 150 nm. Electric double layer (EDL) overlap, diffusion, and adsorption/desorption properties and/or dielectrophoretic effects giving rise to stick/slip motion are some of the processes that can play a role in determining the efficiency of nanoscale electrophoretic separations. We investigated the performance characteristics of electrophoretic separations carried out in nanoslits fabricated in poly(methyl methacrylate), PMMA, devices. Silver nanoparticles (AgNPs) were used as the model system with tracking of their transport via dark field microscopy and localized surface plasmon resonance. AgNPs capped with citrate groups and the negatively charged PMMA walls (induced by O2 plasma modification of the nanoslit walls) enabled separations that were not apparent when these particles were electrophoresed in microscale columns. The separation of AgNPs based on their size without the need for buffer additives using PMMA nanoslit devices is demonstrated herein. Operational parameters such as the electric field strength, nanoslit dimensions, and buffer composition were evaluated as to their effects on the electrophoretic performance, both in terms of efficiency (plate numbers) and resolution. Electrophoretic separations performed at high electric field strengths (>200 V/cm) resulted in higher plate numbers compared to lower fields due to the absence of stick/slip motion at the higher electric field strengths. Indeed, 60 nm AgNPs could be separated from 100 nm particles in free solution using nanoscale electrophoresis with 100 μm long columns.

A study of effects of electrode contacts on performance of organic-based light-emitting field-effect transistors

NASA Astrophysics Data System (ADS)

Kim, Dae-Kyu; Choi, Jong-Ho

2018-02-01

Herein is presented a comparative performance analysis of heterojunction organic-based light-emitting field-effect transistors (OLEFETs) with symmetric (Au only) and asymmetric (Au and LiF/Al) electrode contacts. The devices had a top source-drain contact with long-channel geometry and were produced by sequentially depositing p-type pentacene and n-type N,N‧-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) using a neutral cluster beam deposition apparatus. The spectroscopic, structural and morphological properties of the organic thin films were examined using photoluminescence (PL) spectroscopy, X-ray diffraction (XRD) method, laser scanning confocal and atomic force microscopy (LSCM, AFM). Based upon the growth of high-quality, well-packed crystalline thin films, the devices demonstrated ambipolar field-effect characteristics, stress-free operational stability, and light emission under ambient conditions. Various device parameters were derived from the fits of the observed characteristics. The hole mobilities were nearly equal irrespective of the electrode contacts, whereas the electron mobilities of the transistors with LiF/Al drain electrodes were higher due to the low injection barrier. For the OLEFETs with symmetric electrodes, electroluminescence (EL) occurred only in the vicinity of the hole-injecting electrode, whereas for the OLEFETs with asymmetric electrodes, the emission occurred in the vicinity of both hole- and electron-injecting electrodes. By tuning the carrier injection and transport through high- and low-work function metals, the hole-electron recombination sites could be controlled. The operating conduction and light emission mechanism are discussed with the aid of EL images obtained using a charge-coupled device (CCD) camera.

Tailoring indium oxide nanocrystal synthesis conditions for air-stable high-performance solution-processed thin-film transistors.

PubMed

Swisher, Sarah L; Volkman, Steven K; Subramanian, Vivek

2015-05-20

Semiconducting metal oxides (ZnO, SnO2, In2O3, and combinations thereof) are a uniquely interesting family of materials because of their high carrier mobilities in the amorphous and generally disordered states, and solution-processed routes to these materials are of particular interest to the printed electronics community. Colloidal nanocrystal routes to these materials are particularly interesting, because nanocrystals may be formulated with tunable surface properties into stable inks, and printed to form devices in an additive manner. We report our investigation of an In2O3 nanocrystal synthesis for high-performance solution-deposited semiconductor layers for thin-film transistors (TFTs). We studied the effects of various synthesis parameters on the nanocrystals themselves, and how those changes ultimately impacted the performance of TFTs. Using a sintered film of solution-deposited In2O3 nanocrystals as the TFT channel material, we fabricated devices that exhibit field effect mobility of 10 cm(2)/(V s) and an on/off current ratio greater than 1 × 10(6). These results outperform previous air-stable nanocrystal TFTs, and demonstrate the suitability of colloidal nanocrystal inks for high-performance printed electronics.

Effects of VR system fidelity on analyzing isosurface visualization of volume datasets.

PubMed

Laha, Bireswar; Bowman, Doug A; Socha, John J

2014-04-01

Volume visualization is an important technique for analyzing datasets from a variety of different scientific domains. Volume data analysis is inherently difficult because volumes are three-dimensional, dense, and unfamiliar, requiring scientists to precisely control the viewpoint and to make precise spatial judgments. Researchers have proposed that more immersive (higher fidelity) VR systems might improve task performance with volume datasets, and significant results tied to different components of display fidelity have been reported. However, more information is needed to generalize these results to different task types, domains, and rendering styles. We visualized isosurfaces extracted from synchrotron microscopic computed tomography (SR-μCT) scans of beetles, in a CAVE-like display. We ran a controlled experiment evaluating the effects of three components of system fidelity (field of regard, stereoscopy, and head tracking) on a variety of abstract task categories that are applicable to various scientific domains, and also compared our results with those from our prior experiment using 3D texture-based rendering. We report many significant findings. For example, for search and spatial judgment tasks with isosurface visualization, a stereoscopic display provides better performance, but for tasks with 3D texture-based rendering, displays with higher field of regard were more effective, independent of the levels of the other display components. We also found that systems with high field of regard and head tracking improve performance in spatial judgment tasks. Our results extend existing knowledge and produce new guidelines for designing VR systems to improve the effectiveness of volume data analysis.

Building America Case Study: Performance and Costs of Ductless Heat Pumps in Marine Climate High-Performance Homes: Habitat for Humanity -- The Woods, Tacoma, Washington

DOE Office of Scientific and Technical Information (OSTI.GOV)

The Woods is a Habitat for Humanity (HFH) community of ENERGY STAR Homes (c) Northwest (ESHNW)-certified homes located in the marine climate of Tacoma/Pierce County, Washington. This research report builds on an earlier preliminary draft 2014 BA report, and includes significant billing analysis and cost effectiveness research from a collaborative, ongoing Ductless Heat Pump (DHP) research effort for Tacoma Public Utilities (TPU) and Bonneville Power Administration (BPA). This report focuses on the results of field testing, modeling, and monitoring of ductless mini-split heat pump hybrid heating systems in seven homes built and first occupied at various times between September 2013more » and October 2014. The report also provides WSU documentation of high-performance home observations, lessons learned, and stakeholder recommendations for builders of affordable high-performance housing such as HFH.« less

High-Performance Sensors Based on Resistance Fluctuations of Single-Layer-Graphene Transistors.

PubMed

Amin, Kazi Rafsanjani; Bid, Aveek

2015-09-09

One of the most interesting predicted applications of graphene-monolayer-based devices is as high-quality sensors. In this article, we show, through systematic experiments, a chemical vapor sensor based on the measurement of low-frequency resistance fluctuations of single-layer-graphene field-effect-transistor devices. The sensor has extremely high sensitivity, very high specificity, high fidelity, and fast response times. The performance of the device using this scheme of measurement (which uses resistance fluctuations as the detection parameter) is more than 2 orders of magnitude better than a detection scheme in which changes in the average value of the resistance is monitored. We propose a number-density-fluctuation-based model to explain the superior characteristics of a noise-measurement-based detection scheme presented in this article.