Silicon Carbide Solar Cells Investigated

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Raffaelle, Ryne P.

2001-01-01

The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

Fiber-based wearable electronics: a review of materials, fabrication, devices, and applications.

PubMed

Zeng, Wei; Shu, Lin; Li, Qiao; Chen, Song; Wang, Fei; Tao, Xiao-Ming

2014-08-20

Fiber-based structures are highly desirable for wearable electronics that are expected to be light-weight, long-lasting, flexible, and conformable. Many fibrous structures have been manufactured by well-established lost-effective textile processing technologies, normally at ambient conditions. The advancement of nanotechnology has made it feasible to build electronic devices directly on the surface or inside of single fibers, which have typical thickness of several to tens microns. However, imparting electronic functions to porous, highly deformable and three-dimensional fiber assemblies and maintaining them during wear represent great challenges from both views of fundamental understanding and practical implementation. This article attempts to critically review the current state-of-arts with respect to materials, fabrication techniques, and structural design of devices as well as applications of the fiber-based wearable electronic products. In addition, this review elaborates the performance requirements of the fiber-based wearable electronic products, especially regarding the correlation among materials, fiber/textile structures and electronic as well as mechanical functionalities of fiber-based electronic devices. Finally, discussions will be presented regarding to limitations of current materials, fabrication techniques, devices concerning manufacturability and performance as well as scientific understanding that must be improved prior to their wide adoption. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Rational design of metal-organic electronic devices: A computational perspective

NASA Astrophysics Data System (ADS)

Chilukuri, Bhaskar

Organic and organometallic electronic materials continue to attract considerable attention among researchers due to their cost effectiveness, high flexibility, low temperature processing conditions and the continuous emergence of new semiconducting materials with tailored electronic properties. In addition, organic semiconductors can be used in a variety of important technological devices such as solar cells, field-effect transistors (FETs), flash memory, radio frequency identification (RFID) tags, light emitting diodes (LEDs), etc. However, organic materials have thus far not achieved the reliability and carrier mobility obtainable with inorganic silicon-based devices. Hence, there is a need for finding alternative electronic materials other than organic semiconductors to overcome the problems of inferior stability and performance. In this dissertation, I research the development of new transition metal based electronic materials which due to the presence of metal-metal, metal-pi, and pi-pi interactions may give rise to superior electronic and chemical properties versus their organic counterparts. Specifically, I performed computational modeling studies on platinum based charge transfer complexes and d 10 cyclo-[M(mu-L)]3 trimers (M = Ag, Au and L = monoanionic bidentate bridging (C/N~C/N) ligand). The research done is aimed to guide experimental chemists to make rational choices of metals, ligands, substituents in synthesizing novel organometallic electronic materials. Furthermore, the calculations presented here propose novel ways to tune the geometric, electronic, spectroscopic, and conduction properties in semiconducting materials. In addition to novel material development, electronic device performance can be improved by making a judicious choice of device components. I have studied the interfaces of a p-type metal-organic semiconductor viz cyclo-[Au(mu-Pz)] 3 trimer with metal electrodes at atomic and surface levels. This work was aimed to guide the device engineers to choose the appropriate metal electrodes considering the chemical interactions at the interface. Additionally, the calculations performed on the interfaces provided valuable insight into binding energies, charge redistribution, change in the energy levels, dipole formation, etc., which are important parameters to consider while fabricating an electronic device. The research described in this dissertation highlights the application of unique computational modeling methods at different levels of theory to guide the experimental chemists and device engineers toward a rational design of transition metal based electronic devices with low cost and high performance.

Two-Dimensional Materials for Halide Perovskite-Based Optoelectronic Devices.

PubMed

Chen, Shan; Shi, Gaoquan

2017-06-01

Halide perovskites have high light absorption coefficients, long charge carrier diffusion lengths, intense photoluminescence, and slow rates of non-radiative charge recombination. Thus, they are attractive photoactive materials for developing high-performance optoelectronic devices. These devices are also cheap and easy to be fabricated. To realize the optimal performances of halide perovskite-based optoelectronic devices (HPODs), perovskite photoactive layers should work effectively with other functional materials such as electrodes, interfacial layers and encapsulating films. Conventional two-dimensional (2D) materials are promising candidates for this purpose because of their unique structures and/or interesting optoelectronic properties. Here, we comprehensively summarize the recent advancements in the applications of conventional 2D materials for halide perovskite-based photodetectors, solar cells and light-emitting diodes. The examples of these 2D materials are graphene and its derivatives, mono- and few-layer transition metal dichalcogenides (TMDs), graphdiyne and metal nanosheets, etc. The research related to 2D nanostructured perovskites and 2D Ruddlesden-Popper perovskites as efficient and stable photoactive layers is also outlined. The syntheses, functions and working mechanisms of relevant 2D materials are introduced, and the challenges to achieving practical applications of HPODs using 2D materials are also discussed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High performance AlScN thin film based surface acoustic wave devices with large electromechanical coupling coefficient

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Wenbo; He, Xingli; Ye, Zhi, E-mail: yezhi@zju.edu.cn, E-mail: jl2@bolton.ac.uk

AlN and AlScN thin films with 27% scandium (Sc) were synthesized by DC magnetron sputtering deposition and used to fabricate surface acoustic wave (SAW) devices. Compared with AlN-based devices, the AlScN SAW devices exhibit much better transmission properties. Scandium doping results in electromechanical coupling coefficient, K{sup 2}, in the range of 2.0% ∼ 2.2% for a wide normalized thickness range, more than a 300% increase compared to that of AlN-based SAW devices, thus demonstrating the potential applications of AlScN in high frequency resonators, sensors, and high efficiency energy harvesting devices. The coupling coefficients of the present AlScN based SAW devices are muchmore » higher than that of the theoretical calculation based on some assumptions for AlScN piezoelectric material properties, implying there is a need for in-depth investigations on the material properties of AlScN.« less

Micro-opto-mechanical devices and systems using epitaxial lift off

NASA Technical Reports Server (NTRS)

Camperi-Ginestet, C.; Kim, Young W.; Wilkinson, S.; Allen, M.; Jokerst, N. M.

1993-01-01

The integration of high quality, single crystal thin film gallium arsenide (GaAs) and indium phosphide (InP) based photonic and electronic materials and devices with host microstructures fabricated from materials such as silicon (Si), glass, and polymers will enable the fabrication of the next generation of micro-opto-mechanical systems (MOMS) and optoelectronic integrated circuits. Thin film semiconductor devices deposited onto arbitrary host substrates and structures create hybrid (more than one material) near-monolithic integrated systems which can be interconnected electrically using standard inexpensive microfabrication techniques such as vacuum metallization and photolithography. These integrated systems take advantage of the optical and electronic properties of compound semiconductor devices while still using host substrate materials such as silicon, polysilicon, glass and polymers in the microstructures. This type of materials optimization for specific tasks creates higher performance systems than those systems which must use trade-offs in device performance to integrate all of the function in a single material system. The low weight of these thin film devices also makes them attractive for integration with micromechanical devices which may have difficulty supporting and translating the full weight of a standard device. These thin film devices and integrated systems will be attractive for applications, however, only when the development of low cost, high yield fabrication and integration techniques makes their use economically feasible. In this paper, we discuss methods for alignment, selective deposition, and interconnection of thin film epitaxial GaAs and InP based devices onto host substrates and host microstructures.

Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials.

PubMed

Wang, Feng; Wang, Zhenxing; Jiang, Chao; Yin, Lei; Cheng, Ruiqing; Zhan, Xueying; Xu, Kai; Wang, Fengmei; Zhang, Yu; He, Jun

2017-09-01

2D layered semiconducting materials (2DLSMs) represent the thinnest semiconductors, holding many novel properties, such as the absence of surface dangling bonds, sizable band gaps, high flexibility, and ability of artificial assembly. With the prospect of bringing revolutionary opportunities for electronic and optoelectronic applications, 2DLSMs have prospered over the past twelve years. From materials preparation and property exploration to device applications, 2DLSMs have been extensively investigated and have achieved great progress. However, there are still great challenges for high-performance devices. In this review, we provide a brief overview on the recent breakthroughs in device optimization based on 2DLSMs, particularly focussing on three aspects: device configurations, basic properties of channel materials, and heterostructures. The effects from device configurations, i.e., electrical contacts, dielectric layers, channel length, and substrates, are discussed. After that, the affect of the basic properties of 2DLSMs on device performance is summarized, including crystal defects, crystal symmetry, doping, and thickness. Finally, we focus on heterostructures based on 2DLSMs. Through this review, we try to provide a guide to improve electronic and optoelectronic devices of 2DLSMs for achieving practical device applications in the future. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

GaN-on-Silicon - Present capabilities and future directions

NASA Astrophysics Data System (ADS)

Boles, Timothy

2018-02-01

Gallium Nitride, in the form of epitaxial HEMT transistors on various substrate materials, is the newest and most promising semiconductor technology for high performance devices in the RF, microwave, and mmW arenas. This is particularly true for GaN-on-Silicon based devices and MMIC's which enable both state-of-the-art high frequency functionality and the ability to scale production into large wafer diameter CMOS foundries. The design and development of GaN-on-Silicon structures and devices will be presented beginning with the basic material parameters, growth of the required epitaxial construction, and leading to the fundamental operational theory of high frequency, high power HEMTs. In this discussion comparisons will be made with alternative substrate materials with emphasis on contrasting the inherent advantages of a silicon based system. Theory of operation of microwave and mmW high power HEMT devices will be presented with special emphasis on fundamental limitations of device performance including inherent frequency limiting transit time analysis, required impedance transformations, internal and external parasitic reactance, thermal impedance optimization, and challenges improved by full integration into monolithic MMICs. Lastly, future directions for implementing GaN-on-Silicon into mainstream CMOS silicon semiconductor technologies will be discussed.

Large cooling differentials and high heat flux capability with p-type Bi2Te3/Sb2Te3 and n-type Bi2Te3/Bi2SexTe3-x Superlattice Thermoelectric Devices

NASA Astrophysics Data System (ADS)

Bulman, Gary; Siivola, Ed; Wiitala, Ryan; Grant, Brian; Pierce, Jonathan; Venkatasubramanian, Rama

2007-03-01

Thin film superlattice (SL) based thermoelectric (TE) devices offer the potential for improved efficiency and high heat flux cooling over conventional bulk materials. Recently, we have demonstrated external cooling of 55K and heat pumping capacity of 128 W/cm^2. These high heat fluxes in thin film devices, while attractive for cooling hot-spots in electronics, also make the device performance sensitive to various thermal resistances in the device structure. We will discuss advances in the cooling performance of Bi2Te3-based SL TE devices and describe a method to extract device material parameters, including thermal resistance, from measurements of their δT-I-V characteristics. These parameters will be compared to values obtained through Hall and Seebeck coefficient measurement on epitaxial materials. Results will be presented for both single couple and multi-couple modules, as well as multi-stage cascaded devices made with these materials. Single stage cooling couples with δTmax of 57.8K (Tc˜242K) and multi-stage modules with δTmax˜92.2K (Tc˜209K) have been measured. G.E. Bulman, E. Siivola, B. Shen and R. Venkatasubramanian, Appl. Phys. Lett. 89, 122117 (2006).

Material selection indices for design of surgical instruments with long tubular shafts.

PubMed

Nelson, Carl A

2013-02-01

In any medical device design process, material selection plays an important role. For devices which sustain mechanical loading, strength and stiffness requirements can be significant drivers of the design. This paper examines the specific case of minimally invasive surgical instruments, including robotic instruments, having long, tubular shafts. Material properties-based selection indices are derived for achieving high performance of these devices in terms of strength and stiffness, and the use of these indices for informing the medical device design problem is illustrated.

High-efficiency cell concepts on low-cost silicon sheets

NASA Technical Reports Server (NTRS)

Bell, R. O.; Ravi, K. V.

1985-01-01

The limitations on sheet growth material in terms of the defect structure and minority carrier lifetime are discussed. The effect of various defects on performance are estimated. Given these limitations designs for a sheet growth cell that will make the best of the material characteristics are proposed. Achievement of optimum synergy between base material quality and device processing variables is proposed. A strong coupling exists between material quality and the variables during crystal growth, and device processing variables. Two objectives are outlined: (1) optimization of the coupling for maximum performance at minimal cost; and (2) decoupling of materials from processing by improvement in base material quality to make it less sensitive to processing variables.

Semiconductor Materials for High Frequency Solid State Sources.

DTIC Science & Technology

1985-01-18

saturation on near and submicron-scale device performance. The motivation for this is as follows: Presently, individual semiconductors are accepted or...basis of all FET scaling procedures; and is a major motivating factor for going to submicron structures. This scaling was tested with the 4 following...performance. The motivation for this is as follows: Presently, individual semiconductors are accepted or rejected as candidate device materials based, in

Recent progress on fabrication of memristor and transistor-based neuromorphic devices for high signal processing speed with low power consumption

NASA Astrophysics Data System (ADS)

Hadiyawarman; Budiman, Faisal; Goldianto Octensi Hernowo, Detiza; Pandey, Reetu Raj; Tanaka, Hirofumi

2018-03-01

The advanced progress of electronic-based devices for artificial neural networks and recent trends in neuromorphic engineering are discussed in this review. Recent studies indicate that the memristor and transistor are two types of devices that can be implemented as neuromorphic devices. The electrical switching characteristics and physical mechanism of neuromorphic devices based on metal oxide, metal sulfide, silicon, and carbon materials are broadly covered in this review. Moreover, the switching performance comparison of several materials mentioned above are well highlighted, which would be useful for the further development of memristive devices. Recent progress in synaptic devices and the application of a switching device in the learning process is also discussed in this paper.

Effects of BOX engineering on analogue/RF and circuit performance of InGaAs-OI-Si MOSFET

NASA Astrophysics Data System (ADS)

Maity, Subir Kr.; Pandit, Soumya

2017-11-01

InGaAs is an attractive choice as alternate channel material in n-channel metal oxide semiconductor transistor for high-performance applications. However, electrostatic integrity of such device is poor. In this paper, we present a comprehensive technology computer-aided design simulation-based study of the effect of scaling the thickness of the buried oxide (BOX) region and varying the dielectric constant of BOX material on the electrostatic integrity, analogue/radio frequency (RF) performance and circuit performance of InGaAs-on-Insulator device. Device with thin BOX layer gives better drain-induced barrier lowering performance which enhances output resistance. The carrier mobility remains almost constant with thinning of BOX layer up to certain value. By lowering the dielectric constant of the BOX material, it is further possible to improve the analogue and RF performance. Effect of BOX thickness scaling and role of BOX dielectric material on gain-frequency response of common source amplifier is also studied. It is observed that frequency response of the amplifier improves for thin BOX and with low dielectric constant-based material.

Developing improved silica materials and devices for integrated optics applications

NASA Astrophysics Data System (ADS)

Maker, Ashley Julia

Due to their favorable optical and material properties, silica-based materials and devices have found many important applications throughout science and engineering, especially in sensing, communications, lasers, and integrated optics. Often, silica's properties ultimately limit the performance of these applications. To address this limitation, this thesis investigates the development of improved silica materials and optical devices, including silica films, coatings, waveguides, resonators, lasers, and sensors. Using sol-gel chemistry and microfabrication procedures, custom silica materials and devices are developed to benefit many applications. In this thesis, it is first demonstrated how the low optical loss of silica enables fabrication of low loss integrated waveguides and toroidal resonators with ultra-high quality factors. Then, by adding various rare earth and metal dopants to sol-gel silica, hybrid silica materials and devices are made with custom properties such as high refractive index and lasing capabilities. Finally, several applications are demonstrated, including the use of high refractive index coatings to control the behavior of light, development of Raman and ultra-low threshold rare earth microlasers, and a heterodyned microlaser sensor with significantly improved sensing performance. Future applications and directions of this research are also discussed.

Recent Progress on Flexible and Wearable Supercapacitors.

PubMed

Xue, Qi; Sun, Jinfeng; Huang, Yan; Zhu, Minshen; Pei, Zengxia; Li, Hongfei; Wang, Yukun; Li, Na; Zhang, Haiyan; Zhi, Chunyi

2017-12-01

Recently, wearable electronic devices including electrical sensors, flexible displays, and health monitors have received considerable attention and experienced rapid progress. Wearable supercapacitors attract tremendous attention mainly due to their high stability, low cost, fast charging/discharging, and high efficiency; properties that render them value for developing fully flexible devices. In this Concept, the recent achievements and advances made in flexible and wearable supercapacitors are presented, especially highlighting the promising performances of yarn/fiber-shaped and planar supercapacitors. On the basis of their working mechanism, electrode materials including carbon-based materials, metal oxide-based materials, and conductive polymers with an emphasis on the performance-optimization method are introduced. The latest representative techniques and active materials of recently developed supercapacitors with superior performance are summarized. Furthermore, the designs of 1D and 2D electrodes are discussed according to their electrically conductive supporting materials. Finally, conclusions, challenges, and perspective in optimizing and developing the electrochemical performance and function of wearable supercapacitors for their practical utility are addressed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Collaborative designing and job satisfaction of airplane manufacturing engineers: A case study

NASA Astrophysics Data System (ADS)

Johnson, Michael David, Sr.

The group III-nitride system of materials has had considerable commercial success in recent years in the solid state lighting (SSL) and power electronics markets. The need for high efficient general lighting applications has driven research into InGaN based blue light emitting diodes (LEDs), and demand for more efficient power electronics for telecommunications has driven research into AlGaN based high electron mobility transistors (HEMTs). However, the group III-nitrides material properties make them attractive for several other applications that have not received as much attention. This work focuses on developing group III-nitride based devices for novel applications. GaN is a robust, chemically inert, piezoelectric material, making it an ideal candidate for surface acoustic wave (SAW) devices designed for high temperature and/or harsh environment sensors. In this work, SAW devices based on GaN are developed for use in high temperature gas or chemical sensor applications. To increase device sensitivity, while maintaining a simple one-step photolithography fabrication process, devices were designed to operate at high harmonic frequencies. This allows for GHz regime operation without sub-micron fabrication. One potential market for this technology is continuous emissions monitoring of combustion gas vehicles. In addition to SAW devices, high electron mobility transistors (HEMTs) were developed. The epitaxial structure was characterized and the 2-D electron gas concentrations were simulated and compared to experimental results. Device fabrication processes were developed and are outlined. Fabricated devices were electrically measured and device performance is discussed.

Solid-State High Performance Flexible Supercapacitors Based on Polypyrrole-MnO2-Carbon Fiber Hybrid Structure

NASA Astrophysics Data System (ADS)

Tao, Jiayou; Liu, Nishuang; Ma, Wenzhen; Ding, Longwei; Li, Luying; Su, Jun; Gao, Yihua

2013-07-01

A solid-state flexible supercapacitor (SC) based on organic-inorganic composite structure was fabricated through an ``in situ growth for conductive wrapping'' and an electrode material of polypyrrole (PPy)-MnO2 nanoflakes-carbon fiber (CF) hybrid structure was obtained. The conductive organic material of PPy greatly improved the electrochemical performance of the device. With a high specific capacitance of 69.3 F cm-3 at a discharge current density of 0.1 A cm-3 and an energy density of 6.16 × 10-3 Wh cm-3 at a power density of 0.04 W cm-3, the device can drive a commercial liquid crystal display (LCD) after being charged. The organic-inorganic composite active materials have enormous potential in energy management and the ``in situ growth for conductive wrapping'' method might be generalized to open up new strategies for designing next-generation energy storage devices.

Architectures for Improved Organic Semiconductor Devices

NASA Astrophysics Data System (ADS)

Beck, Jonathan H.

Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes, semiconductors and substrates compatible with low-temperature, flexible, and oxygenated and aromatic solvent-free fabrication. Materials and processes must be capable of future high volume production in order to enable low costs. In this thesis we explore several techniques to improve organic semiconductor device performance and enable new fabrication processes. In Chapter 2, I describe the integration of sub-optical-wavelength nanostructured electrodes that improve fill factor and power conversion efficiency in organic photovoltaic devices. Photovoltaic fill factor performance is one of the primary challenges facing organic photovoltaics because most organic semiconductors have poor charge mobility. Our electrical and optical measurements and simulations indicate that nanostructured electrodes improve charge extraction in organic photovoltaics. In Chapter 3, I describe a general method for maximizing the efficiency of organic photovoltaic devices by simultaneously optimizing light absorption and charge carrier collection. We analyze the potential benefits of light trapping strategies for maximizing the overall power conversion efficiency of organic photovoltaic devices. This technique may be used to improve organic photovoltaic materials with low absorption, or short exciton diffusion and carrier-recombination lengths, opening up the device design space. In Chapter 4, I describe a process for high-quality graphene transfer onto chemically sensitive, weakly interacting organic semiconductor thin-films. Graphene is a promising flexible and highly transparent electrode for organic electronics; however, transferring graphene films onto organic semiconductor devices was previously impossible. We demonstrate a new transfer technique based on an elastomeric stamp coated with an fluorinated polymer release layer. We fabricate three classes of organic semiconductor devices: field effect transistors without high temperature annealing, transparent organic light-emitting diodes, and transparent small-molecule organic photovoltaic devices.

Amorphous Hole-Transporting Material based on 2,2'-Bis-substituted 1,1'-Biphenyl Scaffold for Application in Perovskite Solar Cells.

PubMed

Magomedov, Artiom; Sakai, Nobuya; Kamarauskas, Egidijus; Jokubauskaitė, Gabrielė; Franckevičius, Marius; Jankauskas, Vygintas; Snaith, Henry J; Getautis, Vytautas

2017-05-04

Perovskite solar cells are considered a promising technology for solar-energy conversion, with power conversion efficiencies currently exceeding 20 %. In most of the reported devices, Spiro-OMeTAD is used for positive-charge extraction and transport layer. Although a number of alternative hole-transporting materials with different aromatic or heteroaromatic fragments have already been synthesized, a cheap and well-performing hole-transporting material is still in high demand. In this work, a two-step synthesis of a carbazole-based hole-transporting material is presented. Synthesized compounds exhibited amorphous nature, good solubility and thermal stability. The perovskite solar cells employing the newly synthesized material generated a power conversion efficiency of 16.5 % which is slightly lower than that obtained with Spiro-OMeTAD (17.5 %). The low-cost synthesis and high performance makes our hole-transport material promising for applications in perovskite-based optoelectronic devices. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Perovskite Materials: Solar Cell and Optoelectronic Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Bin; Geohegan, David B; Xiao, Kai

2017-01-01

Hybrid organometallic trihalide perovskites are promising candidates in the applications for next-generation, high-performance, low-cost optoelectronic devices, including photovoltaics, light emitting diodes, and photodetectors. Particularly, the solar cells based on this type of materials have reached 22% lab scale power conversion efficiency in only about seven years, comparable to the other thin film photovoltaic technologies. Hybrid perovskite materials not only exhibit superior optoelectronic properties, but also show many interesting physical properties such as ion migration and defect physics, which may allow the exploration of more device functionalities. In this article, the fundamental understanding of the interrelationships between crystal structure, electronic structure,more » and material properties is discussed. Various chemical synthesis and processing methods for superior device performance in solar cells and optoelectronic devices are reviewed.« less

High-performance all-printed amorphous oxide FETs and logics with electronically compatible electrode/ channel interface.

PubMed

Sharma, Bhupendra Kumar; Stoesser, Anna; Mondal, Sandeep Kumar; Garlapati, Suresh K; Fawey, Mohammed H; Chakravadhanula, Venkata Sai Kiran; Kruk, Robert; Hahn, Horst; Dasgupta, Subho

2018-06-12

Oxide semiconductors typically show superior device performance compared to amorphous silicon or organic counterparts, especially, when they are physical vapor deposited. However, it is not easy to reproduce identical device characteristics when the oxide field-effect transistors (FETs) are solution-processed/ printed; the level of complexity further intensifies with the need to print the passive elements as well. Here, we developed a protocol for designing the most electronically compatible electrode/ channel interface based on the judicious material selection. Exploiting this newly developed fabrication schemes, we are now able to demonstrate high-performance all-printed FETs and logic circuits using amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor, indium tin oxide (ITO) as electrodes and composite solid polymer electrolyte as the gate insulator. Interestingly, all-printed FETs demonstrate an optimal electrical performance in terms of threshold voltages and device mobility and may very well be compared with devices fabricated using sputtered ITO electrodes. This observation originates from the selection of electrode/ channel materials from the same transparent semiconductor oxide family, resulting in the formation of In-Sn-Zn-O (ITZO) based diffused a-IGZO/ ITO interface that controls doping density while ensuring high electrical performance. Compressive spectroscopic studies reveal that Sn doping mediated excellent band alignment of IGZO with ITO electrodes is responsible for the excellent device performance observed. All-printed n-MOS based logic circuits have also been demonstrated towards new-generation portable electronics.

High Performance Tandem Perovskite/Polymer Solar Cells

NASA Astrophysics Data System (ADS)

Liu, Yao; Bag, Monojit; Page, Zachariah; Renna, Lawrence; Kim, Paul; Choi, Jaewon; Emrick, Todd; Venkataraman, D.; Russell, Thomas

Combining perovskites with other inorganic materials, such as copper indium gallium diselenide (CIGS) or silicon, is enabling significant improvement in solar cell device performance. Here, we demonstrate a highly efficient hybrid tandem solar cell fabricated through a facile solution deposition approach to give a perovskite front sub-cell and a polymer:fullerene blend back sub-cell. This methodology eliminates the adverse effects of thermal annealing during perovskite fabrication on polymer solar cells. The record tandem solar cell efficiency of 15.96% is 40% greater than the corresponding perovskite-based single junction device and 65% greater than the polymer-based single junction device, while mitigating deleterious hysteresis effects often associated with perovskite solar cells. The hybrid tandem devices demonstrate the synergistic effects arising from the combination of perovskite and polymer-based materials for solar cells. This work was supported by the Department of Energy-supported Energy Frontier Research Center at the University of Massachusetts (DE-SC0001087). The authors acknowledge the W.M. Keck Electron Microscopy.

760 nm high-performance VCSEL growth and characterization

NASA Astrophysics Data System (ADS)

Rinaldi, Fernando; Ostermann, Johannes M.; Kroner, Andrea; Riedl, Michael C.; Michalzik, Rainer

2006-04-01

High-performance vertical-cavity surface-emitting lasers (VCSELs) with an emission wavelength of approximately 764 nm are demonstrated. This wavelength is very attractive for oxygen sensing. Low threshold currents, high optical output power, single-mode operation, and stable polarization are obtained. Using the surface relief technique and in particular the grating relief technique, we have increased the single-mode output power to more than 2.5mW averaged over a large device quantity. The laser structure was grown by molecular beam epitaxy (MBE) on GaAs (100)-oriented substrates. The devices are entirely based on the AlGaAs mixed compound semiconductor material system. The growth process, the investigations of the epitaxial material together with the device fabrication and characterization are discussed in detail.

Robust broad spectral photodetection (UV-NIR) and ultra high responsivity investigated in nanosheets and nanowires of Bi2Te3 under harsh nano-milling conditions.

PubMed

Sharma, Alka; Srivastava, A K; Senguttuvan, T D; Husale, Sudhir

2017-12-20

Due to miniaturization of device dimensions, the next generation's photodetector based devices are expected to be fabricated from robust nanostructured materials. Hence there is an utmost requirement of investigating exotic optoelectronic properties of nanodevices fabricated from new novel materials and testing their performances at harsh conditions. The recent advances on 2D layered materials indicate exciting progress on broad spectral photodetection (BSP) but still there is a great demand for fabricating ultra-high performance photodetectors made from single material sensing broad electromagnetic spectrum since the detection range 325 nm-1550 nm is not covered by the conventional Si or InGaAs photodetectors. Alternatively, Bi 2 Te 3 is a layered material, possesses exciting optoelectronic, thermoelectric, plasmonics properties. Here we report robust photoconductivity measurements on Bi 2 Te 3 nanosheets and nanowires demonstrating BSP from UV to NIR. The nanosheets of Bi 2 Te 3 show the best ultra-high photoresponsivity (~74 A/W at 1550 nm). Further these nanosheets when transform into nanowires using harsh FIB milling conditions exhibit about one order enhancement in the photoresponsivity without affecting the performance of the device even after 4 months of storage at ambient conditions. An ultra-high photoresponsivity and BSP indicate exciting robust nature of topological insulator based nanodevices for optoelectronic applications.

High-Performance Photovoltaic Detector Based on MoTe2 /MoS2 Van der Waals Heterostructure.

PubMed

Chen, Yan; Wang, Xudong; Wu, Guangjian; Wang, Zhen; Fang, Hehai; Lin, Tie; Sun, Shuo; Shen, Hong; Hu, Weida; Wang, Jianlu; Sun, Jinglan; Meng, Xiangjian; Chu, Junhao

2018-03-01

Van der Waals heterostructures based on 2D layered materials have received wide attention for their multiple applications in optoelectronic devices, such as solar cells, light-emitting devices, and photodiodes. In this work, high-performance photovoltaic photodetectors based on MoTe 2 /MoS 2 vertical heterojunctions are demonstrated by exfoliating-restacking approach. The fundamental electric properties and band structures of the junction are revealed and analyzed. It is shown that this kind of photodetectors can operate under zero bias with high on/off ratio (>10 5 ) and ultralow dark current (≈3 pA). Moreover, a fast response time of 60 µs and high photoresponsivity of 46 mA W -1 are also attained at room temperature. The junctions based on 2D materials are expected to constitute the ultimate functional elements of nanoscale electronic and optoelectronic applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Chemically modified graphene based supercapacitors for flexible and miniature devices

NASA Astrophysics Data System (ADS)

Ghosh, Debasis; Kim, Sang Ouk

2015-09-01

Rapid progress in the portable and flexible electronic devises has stimulated supercapacitor research towards the design and fabrication of high performance flexible devices. Recent research efforts for flexible supercapacitor electrode materials are highly focusing on graphene and chemically modified graphene owing to the unique properties, including large surface area, high electrical and thermal conductivity, excellent mechanical flexibility, and outstanding chemical stability. This invited review article highlights current status of the flexible electrode material research based on chemically modified graphene for supercapacitor application. A variety of electrode architectures prepared from chemically modified graphene are summarized in terms of their structural dimensions. Novel prototypes for the supercapacitor aiming at flexible miniature devices, i.e. microsupercapacitor with high energy and power density are highlighted. Future challenges relevant to graphene-based flexible supercapacitors are also suggested. [Figure not available: see fulltext.

Advanced Materials for High Temperature, High Performance, Wide Bandgap Power Modules

NASA Astrophysics Data System (ADS)

O'Neal, Chad B.; McGee, Brad; McPherson, Brice; Stabach, Jennifer; Lollar, Richard; Liederbach, Ross; Passmore, Brandon

2016-01-01

Advanced packaging materials must be utilized to take full advantage of the benefits of the superior electrical and thermal properties of wide bandgap power devices in the development of next generation power electronics systems. In this manuscript, the use of advanced materials for key packaging processes and components in multi-chip power modules will be discussed. For example, to date, there has been significant development in silver sintering paste as a high temperature die attach material replacement for conventional solder-based attach due to the improved thermal and mechanical characteristics as well as lower processing temperatures. In order to evaluate the bond quality and performance of this material, shear strength, thermal characteristics, and void quality for a number of silver sintering paste materials were analyzed as a die attach alternative to solder. In addition, as high voltage wide bandgap devices shift from engineering samples to commercial components, passivation materials become key in preventing premature breakdown in power modules. High temperature, high dielectric strength potting materials were investigated to be used to encapsulate and passivate components internal to a power module. The breakdown voltage up to 30 kV and corresponding leakage current for these materials as a function of temperature is also presented. Lastly, high temperature plastic housing materials are important for not only discrete devices but also for power modules. As the operational temperature of the device and/or ambient temperature increases, the mechanical strength and dielectric properties are dramatically reduced. Therefore, the electrical characteristics such as breakdown voltage and leakage current as a function of temperature for housing materials are presented.

Flexible and Robust Thermoelectric Generators Based on All-Carbon Nanotube Yarn without Metal Electrodes.

PubMed

Choi, Jaeyoo; Jung, Yeonsu; Yang, Seung Jae; Oh, Jun Young; Oh, Jinwoo; Jo, Kiyoung; Son, Jeong Gon; Moon, Seung Eon; Park, Chong Rae; Kim, Heesuk

2017-08-22

As practical interest in flexible/or wearable power-conversion devices increases, the demand for high-performance alternatives to thermoelectric (TE) generators based on brittle inorganic materials is growing. Herein, we propose a flexible and ultralight TE generator (TEG) based on carbon nanotube yarn (CNTY) with excellent TE performance. The as-prepared CNTY shows a superior electrical conductivity of 3147 S/cm due to increased longitudinal carrier mobility derived from a highly aligned structure. Our TEG is innovative in that the CNTY acts as multifunctions in the same device. The CNTY is alternatively doped into n- and p-types using polyethylenimine and FeCl 3 , respectively. The highly conductive CNTY between the doped regions is used as electrodes to minimize the circuit resistance, thereby forming an all-carbon TEG without additional metal deposition. A flexible TEG based on 60 pairs of n- and p-doped CNTY shows the maximum power density of 10.85 and 697 μW/g at temperature differences of 5 and 40 K, respectively, which are the highest values among reported TEGs based on flexible materials. We believe that the strategy proposed here to improve the power density of flexible TEG by introducing highly aligned CNTY and designing a device without metal electrodes shows great potential for the flexible/or wearable power-conversion devices.

A graphene based frequency quadrupler

NASA Astrophysics Data System (ADS)

Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda

2017-04-01

Benefit from exceptional electrical transport properties, graphene receives worldwide attentions, especially in the domain of high frequency electronics. Due to absence of effective bandgap causing off-state the device, graphene material is extraordinarily suitable for analog circuits rather than digital applications. With this unique ambipolar behavior, graphene can be exploited and utilized to achieve high performance for frequency multipliers. Here, dual-gated graphene field-effect transistors have been firstly used to achieve frequency quadrupling. Two Dirac points in the transfer curves of the designed GFETs can be observed by tuning top-gate voltages, which is essential to generate the fourth harmonic. By applying 200 kHz sinusoid input, arround 50% of the output signal radio frequency power is concentrated at the desired frequency of 800 kHz. Additionally, in suitable operation areas, our devices can work as high performance frequency doublers and frequency triplers. Considered both simple device structure and potential superhigh carrier mobility of graphene material, graphene-based frequency quadruplers may have lots of superiorities in regards to ultrahigh frequency electronic applications in near future. Moreover, versatility of carbon material system is far-reaching for realization of complementary metal-oxide-semiconductor compatible electrically active devices.

A graphene based frequency quadrupler

PubMed Central

Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda

2017-01-01

Benefit from exceptional electrical transport properties, graphene receives worldwide attentions, especially in the domain of high frequency electronics. Due to absence of effective bandgap causing off-state the device, graphene material is extraordinarily suitable for analog circuits rather than digital applications. With this unique ambipolar behavior, graphene can be exploited and utilized to achieve high performance for frequency multipliers. Here, dual-gated graphene field-effect transistors have been firstly used to achieve frequency quadrupling. Two Dirac points in the transfer curves of the designed GFETs can be observed by tuning top-gate voltages, which is essential to generate the fourth harmonic. By applying 200 kHz sinusoid input, arround 50% of the output signal radio frequency power is concentrated at the desired frequency of 800 kHz. Additionally, in suitable operation areas, our devices can work as high performance frequency doublers and frequency triplers. Considered both simple device structure and potential superhigh carrier mobility of graphene material, graphene-based frequency quadruplers may have lots of superiorities in regards to ultrahigh frequency electronic applications in near future. Moreover, versatility of carbon material system is far-reaching for realization of complementary metal-oxide-semiconductor compatible electrically active devices. PMID:28418013

Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

PubMed

Lee, Gwan-Hyoung; Cui, Xu; Kim, Young Duck; Arefe, Ghidewon; Zhang, Xian; Lee, Chul-Ho; Ye, Fan; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip; Hone, James

2015-07-28

Emerging two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have been intensively studied because of their novel properties for advanced electronics and optoelectronics. However, 2D materials are by nature sensitive to environmental influences, such as temperature, humidity, adsorbates, and trapped charges in neighboring dielectrics. Therefore, it is crucial to develop device architectures that provide both high performance and long-term stability. Here we report high performance of dual-gated van der Waals (vdW) heterostructure devices in which MoS2 layers are fully encapsulated by hexagonal boron nitride (hBN) and contacts are formed using graphene. The hBN-encapsulation provides excellent protection from environmental factors, resulting in highly stable device performance, even at elevated temperatures. Our measurements also reveal high-quality electrical contacts and reduced hysteresis, leading to high two-terminal carrier mobility (33-151 cm(2) V(-1) s(-1)) and low subthreshold swing (80 mV/dec) at room temperature. Furthermore, adjustment of graphene Fermi level and use of dual gates enable us to separately control contact resistance and threshold voltage. This novel vdW heterostructure device opens up a new way toward fabrication of stable, high-performance devices based on 2D materials.

[1,2,4]Triazolo[1,5-a]pyridine as Building Blocks for Universal Host Materials for High-Performance Red, Green, Blue and White Phosphorescent Organic Light-Emitting Devices.

PubMed

Song, Wenxuan; Shi, Lijiang; Gao, Lei; Hu, Peijun; Mu, Haichuan; Xia, Zhenyuan; Huang, Jinhai; Su, Jianhua

2018-02-14

The electron-accepting [1,2,4]triazolo[1,5-a]pyridine (TP) moiety was introduced to build bipolar host materials for the first time, and two host materials based on this TP acceptor and carbazole donor, namely, 9,9'-(2-([1,2,4]triazolo[1,5-a]pyridin-2-yl)-1,3-phenylene)bis(9H-carbazole) (o-CzTP) and 9,9'-(5-([1,2,4]triazolo[1,5-a]pyridin-2-yl)-1,3-phenylene)bis(9H-carbazole) (m-CzTP), were designed and synthesized. These two TP-based host materials possess a high triplet energy (>2.9 eV) and appropriate highest occupied molecular orbital/lowest unoccupied molecular orbital levels as well as the bipolar transporting feature, which permits their applicability as universal host materials in multicolor phosphorescent organic light-emitting devices (PhOLEDs). Blue, green, and red PhOLEDs based on o-CzTP and m-CzTP with the same device configuration all show high efficiencies and low efficiency roll-off. The devices hosted by o-CzTP exhibit maximum external quantum efficiencies (η ext ) of 27.1, 25.0, and 15.8% for blue, green, and red light emitting, respectively, which are comparable with the best electroluminescene performance reported for FIrpic-based blue, Ir(ppy) 3 -based green, and Ir(pq) 2 (acac)-based red PhOLEDs equipped with a single-component host. The white PhOLEDs based on the o-CzTP host and three lumophors containing red, green, and blue emitting layers were fabricated with the same device structure, which exhibit a maximum current efficiency and η c of 40.4 cd/A and 17.8%, respectively, with the color rendering index value of 75.

Fused Methoxynaphthyl Phenanthrimidazole Semiconductors as Functional Layer in High Efficient OLEDs.

PubMed

Jayabharathi, Jayaraman; Ramanathan, Periyasamy; Karunakaran, Chockalingam; Thanikachalam, Venugopal

2016-01-01

Efficient hole transport materials based on novel fused methoxynaphthyl phenanthrimidazole core structure were synthesised and characterized. Their device performances in phosphorescent organic light emitting diodes were investigated. The high thermal stability in combination with the reversible oxidation process made promising candidates as hole-transporting materials for organic light-emitting devices. Highly efficient Alq3-based organic light emitting devices have been developed using phenanthrimidazoles as functional layers between NPB [4,4-bis(N-(1-naphthyl)-N-phenylamino)biphenyl] and Alq3 [tris(8-hydroxyquinoline)aluminium] layers. Using the device of ITO/NPB/4/Alq3/LiF/Al, a maximum luminous efficiency of 5.99 cd A(-1) was obtained with a maximum brightness of 40,623 cd m(-2) and a power efficiency of 5.25 lm W(-1).

Development of high-performing semiconducting polymers for organic electrochemical transistors (Conference Presentation)

NASA Astrophysics Data System (ADS)

Nielsen, Christian

2016-11-01

The organic electrochemical transistor (OECT), capable of amplifying small electrical signals in an aqueous environment, is an ideal device to utilize in organic bioelectronic applications involving for example neural interfacing and diagnostics. Currently, most OECTs are fabricated with commercially available conducting poly(3,4-ethylenedioxythiophene)-based suspensions such as PEDOT:PSS and are therefore operated in depletion mode giving rise to devices that are permanently on with non-optimal operational voltage. With the aim to develop and utilize efficient accumulation mode OECT devices, we discuss here our recent results regarding the design, synthesis and performance of novel intrinsic semiconducting polymers. Covering key aspects such as ion and charge transport in the bulk semiconductor and operational voltage and stability of the materials and devices, we have elucidated important structure-property relationships. We illustrate the improvements this approach has afforded in the development of high performance accumulation mode OECT materials.

Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide.

PubMed

Das, Tanmoy; Chen, Xiang; Jang, Houk; Oh, Il-Kwon; Kim, Hyungjun; Ahn, Jong-Hyun

2016-11-01

2D semiconductor materials are being considered for next generation electronic device application such as thin-film transistors and complementary metal-oxide-semiconductor (CMOS) circuit due to their unique structural and superior electronics properties. Various approaches have already been taken to fabricate 2D complementary logics circuits. However, those CMOS devices mostly demonstrated based on exfoliated 2D materials show the performance of a single device. In this work, the design and fabrication of a complementary inverter is experimentally reported, based on a chemical vapor deposition MoS 2 n-type transistor and a Si nanomembrane p-type transistor on the same substrate. The advantages offered by such CMOS configuration allow to fabricate large area wafer scale integration of high performance Si technology with transition-metal dichalcogenide materials. The fabricated hetero-CMOS inverters which are composed of two isolated transistors exhibit a novel high performance air-stable voltage transfer characteristic with different supply voltages, with a maximum voltage gain of ≈16, and sub-nano watt power consumption. Moreover, the logic gates have been integrated on a plastic substrate and displayed reliable electrical properties paving a realistic path for the fabrication of flexible/transparent CMOS circuits in 2D electronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Collection-limited theory interprets the extraordinary response of single semiconductor organic solar cells

PubMed Central

Ray, Biswajit; Baradwaj, Aditya G.; Khan, Mohammad Ryyan; Boudouris, Bryan W.; Alam, Muhammad Ashraful

2015-01-01

The bulk heterojunction (BHJ) organic photovoltaic (OPV) architecture has dominated the literature due to its ability to be implemented in devices with relatively high efficiency values. However, a simpler device architecture based on a single organic semiconductor (SS-OPV) offers several advantages: it obviates the need to control the highly system-dependent nanoscale BHJ morphology, and therefore, would allow the use of broader range of organic semiconductors. Unfortunately, the photocurrent in standard SS-OPV devices is typically very low, which generally is attributed to inefficient charge separation of the photogenerated excitons. Here we show that the short-circuit current density from SS-OPV devices can be enhanced significantly (∼100-fold) through the use of inverted device configurations, relative to a standard OPV device architecture. This result suggests that charge generation may not be the performance bottleneck in OPV device operation. Instead, poor charge collection, caused by defect-induced electric field screening, is most likely the primary performance bottleneck in regular-geometry SS-OPV cells. We justify this hypothesis by: (i) detailed numerical simulations, (ii) electrical characterization experiments of functional SS-OPV devices using multiple polymers as active layer materials, and (iii) impedance spectroscopy measurements. Furthermore, we show that the collection-limited photocurrent theory consistently interprets typical characteristics of regular SS-OPV devices. These insights should encourage the design and OPV implementation of high-purity, high-mobility polymers, and other soft materials that have shown promise in organic field-effect transistor applications, but have not performed well in BHJ OPV devices, wherein they adopt less-than-ideal nanostructures when blended with electron-accepting materials. PMID:26290582

Collection-limited theory interprets the extraordinary response of single semiconductor organic solar cells.

PubMed

Ray, Biswajit; Baradwaj, Aditya G; Khan, Mohammad Ryyan; Boudouris, Bryan W; Alam, Muhammad Ashraful

2015-09-08

The bulk heterojunction (BHJ) organic photovoltaic (OPV) architecture has dominated the literature due to its ability to be implemented in devices with relatively high efficiency values. However, a simpler device architecture based on a single organic semiconductor (SS-OPV) offers several advantages: it obviates the need to control the highly system-dependent nanoscale BHJ morphology, and therefore, would allow the use of broader range of organic semiconductors. Unfortunately, the photocurrent in standard SS-OPV devices is typically very low, which generally is attributed to inefficient charge separation of the photogenerated excitons. Here we show that the short-circuit current density from SS-OPV devices can be enhanced significantly (∼100-fold) through the use of inverted device configurations, relative to a standard OPV device architecture. This result suggests that charge generation may not be the performance bottleneck in OPV device operation. Instead, poor charge collection, caused by defect-induced electric field screening, is most likely the primary performance bottleneck in regular-geometry SS-OPV cells. We justify this hypothesis by: (i) detailed numerical simulations, (ii) electrical characterization experiments of functional SS-OPV devices using multiple polymers as active layer materials, and (iii) impedance spectroscopy measurements. Furthermore, we show that the collection-limited photocurrent theory consistently interprets typical characteristics of regular SS-OPV devices. These insights should encourage the design and OPV implementation of high-purity, high-mobility polymers, and other soft materials that have shown promise in organic field-effect transistor applications, but have not performed well in BHJ OPV devices, wherein they adopt less-than-ideal nanostructures when blended with electron-accepting materials.

Manganese oxide-based materials as electrochemical supercapacitor electrodes.

PubMed

Wei, Weifeng; Cui, Xinwei; Chen, Weixing; Ivey, Douglas G

2011-03-01

Electrochemical supercapacitors (ECs), characteristic of high power and reasonably high energy densities, have become a versatile solution to various emerging energy applications. This critical review describes some materials science aspects on manganese oxide-based materials for these applications, primarily including the strategic design and fabrication of these electrode materials. Nanostructurization, chemical modification and incorporation with high surface area, conductive nanoarchitectures are the three major strategies in the development of high-performance manganese oxide-based electrodes for EC applications. Numerous works reviewed herein have shown enhanced electrochemical performance in the manganese oxide-based electrode materials. However, many fundamental questions remain unanswered, particularly with respect to characterization and understanding of electron transfer and atomic transport of the electrochemical interface processes within the manganese oxide-based electrodes. In order to fully exploit the potential of manganese oxide-based electrode materials, an unambiguous appreciation of these basic questions and optimization of synthesis parameters and material properties are critical for the further development of EC devices (233 references).

Solid-State High Performance Flexible Supercapacitors Based on Polypyrrole-MnO2-Carbon Fiber Hybrid Structure

PubMed Central

Tao, Jiayou; Liu, Nishuang; Ma, Wenzhen; Ding, Longwei; Li, Luying; Su, Jun; Gao, Yihua

2013-01-01

A solid-state flexible supercapacitor (SC) based on organic-inorganic composite structure was fabricated through an “in situ growth for conductive wrapping” and an electrode material of polypyrrole (PPy)-MnO2 nanoflakes-carbon fiber (CF) hybrid structure was obtained. The conductive organic material of PPy greatly improved the electrochemical performance of the device. With a high specific capacitance of 69.3 F cm−3 at a discharge current density of 0.1 A cm−3 and an energy density of 6.16 × 10−3 Wh cm−3 at a power density of 0.04 W cm−3, the device can drive a commercial liquid crystal display (LCD) after being charged. The organic-inorganic composite active materials have enormous potential in energy management and the “in situ growth for conductive wrapping” method might be generalized to open up new strategies for designing next-generation energy storage devices. PMID:23884478

3D printing functional materials and devices (Conference Presentation)

NASA Astrophysics Data System (ADS)

McAlpine, Michael C.

2017-05-01

The development of methods for interfacing high performance functional devices with biology could impact regenerative medicine, smart prosthetics, and human-machine interfaces. Indeed, the ability to three-dimensionally interweave biological and functional materials could enable the creation of devices possessing unique geometries, properties, and functionalities. Yet, most high quality functional materials are two dimensional, hard and brittle, and require high crystallization temperatures for maximal performance. These properties render the corresponding devices incompatible with biology, which is three-dimensional, soft, stretchable, and temperature sensitive. We overcome these dichotomies by: 1) using 3D printing and scanning for customized, interwoven, anatomically accurate device architectures; 2) employing nanotechnology as an enabling route for overcoming mechanical discrepancies while retaining high performance; and 3) 3D printing a range of soft and nanoscale materials to enable the integration of a diverse palette of high quality functional nanomaterials with biology. 3D printing is a multi-scale platform, allowing for the incorporation of functional nanoscale inks, the printing of microscale features, and ultimately the creation of macroscale devices. This three-dimensional blending of functional materials and `living' platforms may enable next-generation 3D printed devices.

Efficient red organic electroluminescent devices by doping platinum(II) Schiff base emitter into two host materials with stepwise energy levels.

PubMed

Zhou, Liang; Kwok, Chi-Chung; Cheng, Gang; Zhang, Hongjie; Che, Chi-Ming

2013-07-15

In this work, organic electroluminescent (EL) devices with double light-emitting layers (EMLs) having stepwise energy levels were designed to improve the EL performance of a red-light-emitting platinum(II) Schiff base complex. A series of devices with single or double EML(s) were fabricated and characterized. Compared with single-EML devices, double-EML devices showed improved EL efficiency and brightness, attributed to better balance in carriers. In addition, the stepwise distribution in energy levels of host materials is instrumental in broadening the recombination zone, thus delaying the roll-off of EL efficiency. The highest EL current efficiency and power efficiency of 17.36 cd/A and 14.73 lm/W, respectively, were achieved with the optimized double-EML devices. At high brightness of 1000 cd/m², EL efficiency as high as 8.89 cd/A was retained.

Development of low-cost technology for the next generation of high efficiency solar cells composed of earth abundant elements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agrawal, Rakesh

2014-09-28

The development of renewable, affordable, and environmentally conscious means of generating energy on a global scale represents a grand challenge of our time. Due to the “permanence” of radiation from the sun, solar energy promises to remain a viable and sustainable power source far into the future. Established single-junction photovoltaic technologies achieve high power conversion efficiencies (pce) near 20% but require complicated manufacturing processes that prohibit the marriage of large-scale throughput (e.g. on the GW scale), profitability, and quality control. Our approach to this problem begins with the synthesis of nanocrystals of semiconductor materials comprising earth abundant elements and characterizedmore » by material and optoelectronic properties ideal for photovoltaic applications, namely Cu2ZnSn(S,Se)4 (CZTSSe). Once synthesized, such nanocrystals are formulated into an ink, coated onto substrates, and processed into completed solar cells in such a way that enables scale-up to high throughput, roll-to-roll manufacturing processes. This project aimed to address the major limitation to CZTSSe solar cell pce’s – the low open-circuit voltage (Voc) reported throughout literature for devices comprised of this material. Throughout the project significant advancements have been made in fundamental understanding of the CZTSSe material and device limitations associated with this material system. Additionally, notable improvements have been made to our nanocrystal based processing technique to alleviate performance limitations due to the identified device limitations. Notably, (1) significant improvements have been made in reducing intra- and inter-nanoparticle heterogeneity, (2) improvements in device performance have been realized with novel cation substitution in Ge-alloyed CZTGeSSe absorbers, (3) systematic analysis of absorber sintering has been conducted to optimize the selenization process for large grain CZTSSe absorbers, (4) novel electrical characterization analysis techniques have been developed to identify significant limitations to traditional electrical characterization of CZTSSe devices, and (5) the developed electrical analysis techniques have been used to identify the role that band gap and electrostatic potential fluctuations have in limiting device performance for this material system. The device modeling and characterization of CZTSSe undertaken with this project have significant implications for the CZTSSe research community, as the identified limitations due to potential fluctuations are expected to be a performance limitation to high-efficiency CZTSSe devices fabricated from all current processing techniques. Additionally, improvements realized through enhanced absorber processing conditions to minimize nanoparticle and large-grain absorber heterogeneity are suggested to be beneficial processing improvements which should be applied to CZTSSe devices fabricated from all processing techniques. Ultimately, our research has indicated that improved performance for CZTSSe will be achieved through novel absorber processing which minimizes defect formation, elemental losses, secondary phase formation, and compositional uniformity in CZTSSe absorbers; we believe this novel absorber processing can be achieved through nanocrystal based processing of CZTSSe which is an active area of research at the conclusion of this award. While significant fundamental understanding of CZTSSe and the performance limitations associated with this material system, as well as notable improvements in the processing of nanocrystal based CZTSSe absorbers, have been achieved under this project, the limitation of two years of research funding towards our goals prevents further significant advancements directly identified through pce. improvements relative to those reported herein. As the characterization and modeling subtask of this project has been the main driving force for understanding device limitations, the conclusions of this analysis have just recently been applied to the processing of nanocrystal based CZTSSe absorbers -- with notable success. We expect the notable fundamental understanding of device limitations and absorber sintering achieved under this project will lead to significant improvements in device performance for CZTSSe devices in the near future for devices fabricated from a variety of processing techniques« less

High-performance indium gallium phosphide/gallium arsenide heterojunction bipolar transistors

NASA Astrophysics Data System (ADS)

Ahmari, David Abbas

Heterojunction bipolar transistors (HBTs) have demonstrated the high-frequency characteristics as well as the high linearity, gain, and power efficiency necessary to make them attractive for a variety of applications. Specific applications for which HBTs are well suited include amplifiers, analog-to-digital converters, current sources, and optoelectronic integrated circuits. Currently, most commercially available HBT-based integrated circuits employ the AlGaAs/GaAs material system in applications such as a 4-GHz gain block used in wireless phones. As modern systems require higher-performance and lower-cost devices, HBTs utilizing the newer, InGaP/GaAs and InP/InGaAs material systems will begin to dominate the HBT market. To enable the widespread use of InGaP/GaAs HBTs, much research on the fabrication, performance, and characterization of these devices is required. This dissertation will discuss the design and implementation of high-performance InGaP/GaAs HBTs as well as study HBT device physics and characterization.

Significant Performance Enhancement in Asymmetric Supercapacitors based on Metal Oxides, Carbon nanotubes and Neutral Aqueous Electrolyte.

PubMed

Singh, Arvinder; Chandra, Amreesh

2015-10-23

Amongst the materials being investigated for supercapacitor electrodes, carbon based materials are most investigated. However, pure carbon materials suffer from inherent physical processes which limit the maximum specific energy and power that can be achieved in an energy storage device. Therefore, use of carbon-based composites with suitable nano-materials is attaining prominence. The synergistic effect between the pseudocapacitive nanomaterials (high specific energy) and carbon (high specific power) is expected to deliver the desired improvements. We report the fabrication of high capacitance asymmetric supercapacitor based on electrodes of composites of SnO2 and V2O5 with multiwall carbon nanotubes and neutral 0.5 M Li2SO4 aqueous electrolyte. The advantages of the fabricated asymmetric supercapacitors are compared with the results published in the literature. The widened operating voltage window is due to the higher over-potential of electrolyte decomposition and a large difference in the work functions of the used metal oxides. The charge balanced device returns the specific capacitance of ~198 F g(-1) with corresponding specific energy of ~89 Wh kg(-1) at 1 A g(-1). The proposed composite systems have shown great potential in fabricating high performance supercapacitors.

Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

PubMed Central

Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

2016-01-01

With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption. PMID:27312225

Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

NASA Astrophysics Data System (ADS)

Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

2016-06-01

With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

Synthesis of graphene and related two-dimensional materials for bioelectronics devices.

PubMed

Zhang, Tao; Liu, Jilun; Wang, Cheng; Leng, Xuanye; Xiao, Yao; Fu, Lei

2017-03-15

In recent years, graphene and related two-dimensional (2D) materials have emerged as exotic materials in nearly every fields of fundamental science and applied engineering. The latest progress has shown that these 2D materials could have a profound impact on bioelectronics devices. For the construction of these bioelectronics devices, these 2D materials were generally synthesized by the processes of exfoliation and chemical vapor deposition. In particular, the macrostructures of these 2D materials have also been realized by these two processes, which have shown great potentials in the self-supported and special-purpose biosensors. Due to the high specific surface area, subtle electron properties, abundant surface atoms of these 2D materials, the as-constructed bioelectronics devices have exhibited enhanced performance in the sensing of small biomolecules, heavy metals, pH, protein and DNA. The aim of this review article is to provide a comprehensive scientific progress in the synthesis of 2D materials for the construction of five typical bioelectronics devices (electrochemical biosensors, FET-based biosensors, piezoelectric devices, electrochemiluminescence devices and supercapacitors) and to overview the present status and future perspective of the applications of these bioelectronics devices based on 2D materials. Copyright © 2016 Elsevier B.V. All rights reserved.

Dual-lasing channel quantum cascade laser based on scattering-assisted injection design.

PubMed

Wen, Boyu; Xu, Chao; Wang, Siyi; Wang, Kaixi; Tam, Man Chun; Wasilewski, Zbig; Ban, Dayan

2018-04-02

A dual lasing channel Terahertz Quantum Cascade laser (THz QCL) based on GaAs/Al 0.17 Ga 0.83 As material system is demonstrated. The device shows the lowest reported threshold current density (550A/cm 2 at 50K) of GaAs/Al x Ga 1-x As material system based scattering-assisted (SA) structures and operates up to a maximum lasing temperature of 144K. Dual lasing channel operation is investigated theoretically and experimentally. The combination of low frequency emission, dual lasing channel operation, low lasing threshold current density and high temperature performance make such devices ideal candidates for low frequency applications, and initiates the design strategy for achieving high-temperature performance terahertz quantum cascade laser with wide frequency coverage at low frequency.

Chemically Integrated Inorganic-Graphene Two-Dimensional Hybrid Materials for Flexible Energy Storage Devices.

PubMed

Peng, Lele; Zhu, Yue; Li, Hongsen; Yu, Guihua

2016-12-01

State-of-the-art energy storage devices are capable of delivering reasonably high energy density (lithium ion batteries) or high power density (supercapacitors). There is an increasing need for these power sources with not only superior electrochemical performance, but also exceptional flexibility. Graphene has come on to the scene and advancements are being made in integration of various electrochemically active compounds onto graphene or its derivatives so as to utilize their flexibility. Many innovative synthesis techniques have led to novel graphene-based hybrid two-dimensional nanostructures. Here, the chemically integrated inorganic-graphene hybrid two-dimensional materials and their applications for energy storage devices are examined. First, the synthesis and characterization of different kinds of inorganic-graphene hybrid nanostructures are summarized, and then the most relevant applications of inorganic-graphene hybrid materials in flexible energy storage devices are reviewed. The general design rules of using graphene-based hybrid 2D materials for energy storage devices and their current limitations and future potential to advance energy storage technologies are also discussed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Energy Efficient Graphene Based High Performance Capacitors.

PubMed

Bae, Joonwon; Kwon, Oh Seok; Lee, Chang-Soo

2017-07-10

Graphene (GRP) is an interesting class of nano-structured electronic materials for various cutting-edge applications. To date, extensive research activities have been performed on the investigation of diverse properties of GRP. The incorporation of this elegant material can be very lucrative in terms of practical applications in energy storage/conversion systems. Among various those systems, high performance electrochemical capacitors (ECs) have become popular due to the recent need for energy efficient and portable devices. Therefore, in this article, the application of GRP for capacitors is described succinctly. In particular, a concise summary on the previous research activities regarding GRP based capacitors is also covered extensively. It was revealed that a lot of secondary materials such as polymers and metal oxides have been introduced to improve the performance. Also, diverse devices have been combined with capacitors for better use. More importantly, recent patents related to the preparation and application of GRP based capacitors are also introduced briefly. This article can provide essential information for future study. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

Ion-Transport Design for High-Performance Na+-Based Electrochromics.

PubMed

Li, Ran; Li, Kerui; Wang, Gang; Li, Lei; Zhang, Qiangqiang; Yan, Jinhui; Chen, Yao; Zhang, Qinghong; Hou, Chengyi; Li, Yaogang; Wang, Hongzhi

2018-04-24

Sodium ion (Na + )-based electrochemical systems have been extensively investigated in batteries and supercapacitors and also can be quality candidates for electrochromic (EC) devices. However, poor diffusion kinetics and severe EC performance degradation occur during the intercalation/deintercalation processes because the ionic radii of Na + are larger than those of conventional intercalation ions. Here, through intentional design of ion-transport channels in metal-organic frameworks (MOFs), Na + serves as an efficient intercalation ion for incorporation into a nanostructured electrode with a high diffusion coefficient of approximately 10 -8 cm 2 s -1 . As a result, the well-designed MOF-based EC device demonstrates desirable Na + EC performance, including fast switching speed, multicolor switching, and high stability. A smart "quick response code" display is fabricated using a mask-free laser writing method for application in the "Internet of Things". In addition, the concept of ion transport pathway design can be widely adopted for fabricating high-performance ion intercalation materials and devices for consumer electronics.

Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application

PubMed Central

Lee, Eunha; Benayad, Anass; Shin, Taeho; Lee, HyungIk; Ko, Dong-Su; Kim, Tae Sang; Son, Kyoung Seok; Ryu, Myungkwan; Jeon, Sanghun; Park, Gyeong-Su

2014-01-01

Interest in oxide semiconductors stems from benefits, primarily their ease of process, relatively high mobility (0.3–10 cm2/vs), and wide-bandgap. However, for practical future electronic devices, the channel mobility should be further increased over 50 cm2/vs and wide-bandgap is not suitable for photo/image sensor applications. The incorporation of nitrogen into ZnO semiconductor can be tailored to increase channel mobility, enhance the optical absorption for whole visible light and form uniform micro-structure, satisfying the desirable attributes essential for high performance transistor and visible light photo-sensors on large area platform. Here, we present electronic, optical and microstructural properties of ZnON, a composite of Zn3N2 and ZnO. Well-optimized ZnON material presents high mobility exceeding 100 cm2V−1s−1, the band-gap of 1.3 eV and nanocrystalline structure with multiphase. We found that mobility, microstructure, electronic structure, band-gap and trap properties of ZnON are varied with nitrogen concentration in ZnO. Accordingly, the performance of ZnON-based device can be adjustable to meet the requisite of both switch device and image-sensor potentials. These results demonstrate how device and material attributes of ZnON can be optimized for new device strategies in display technology and we expect the ZnON will be applicable to a wide range of imaging/display devices. PMID:24824778

The high frequency light load fatigue testing machine based on giant magnetostrictive material and stroke multiplier

NASA Astrophysics Data System (ADS)

Wang, M. D.; Li, D. S.; Huang, Y.; Zhang, C.; Zhong, K. M.; Sun, L. N.

2013-08-01

In the notebook and clamshell mobile phone, data communication wire often requires repeated bending. Generally, communication wire with the actual application conditions, the test data cannot assess bending resistance performance of data communication wire is tested conventionally using wires with weights of 90 degree to test bending number, this test method and device is not fully reflect the fatigue performance in high frequency and light load application condition, at the same time it has a large difference between the test data of the long-term reliability of high frequency and low load conditions. In this paper, high frequency light load fatigue testing machine based on the giant magnetostrictive material and stroke multiplier is put forward, in which internal reflux stroke multiplier is driven by giant magnetostrictive material to realize the rapid movement of light load. This fatigue testing device has the following advantages: (1) When the load is far less than the friction, reducing friction is very effective to improve the device performance. Because the body is symmetrical, the friction loss of radial does not exist in theory, so the stress situation of mechanism is good with high transmission efficiency and long service life. (2) The installation position of the output hydraulic cylinder, can be arranged conveniently as ordinary cylinder. (3) Reciprocating frequency, displacement and speed of high frequency movement can be programmed easily to change with higher position precision. (4)Hydraulic oil in this device is closed to transmit, which does not produce any environment pollution. The device has no hydraulic pump and tank, and less energy conversion processes, so it is with the trend of green manufacturing.

Advanced Graphene-Based Binder-Free Electrodes for High-Performance Energy Storage.

PubMed

Ji, Junyi; Li, Yang; Peng, Wenchao; Zhang, Guoliang; Zhang, Fengbao; Fan, Xiaobin

2015-09-23

The increasing demand for energy has triggered tremendous research effort for the development of high-performance and durable energy-storage devices. Advanced graphene-based electrodes with high electrical conductivity and ion accessibility can exhibit superior electrochemical performance in energy-storage devices. Among them, binder-free configurations can enhance the electron conductivity of the electrode, which leads to a higher capacity by avoiding the addition of non-conductive and inactive binders. Graphene, a 2D material, can be fabricated into a porous and flexible structure with an interconnected conductive network. Such a conductive structure is favorable for both electron and ion transport to the entire electrode surface. In this review, the main processes used to prepare binder-free graphene-based hybrids with high porosity and well-designed electron conductive networks are summarized. Then, the applications of free-standing binder-free graphene-based electrodes in energy-storage devices are discussed. Future research aspects with regard to overcoming the technological bottlenecks are also proposed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals.

PubMed

Varghese, Tony; Hollar, Courtney; Richardson, Joseph; Kempf, Nicholas; Han, Chao; Gamarachchi, Pasindu; Estrada, David; Mehta, Rutvik J; Zhang, Yanliang

2016-09-12

Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstrate a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm(2) with 60 °C temperature difference between the hot side and cold side. The highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications.

High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varghese, Tony; Hollar, Courtney; Richardson, Joseph

Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstratemore » a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm 2 with 60°C temperature difference between the hot side and cold side. In conclusion, the highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications.« less

High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals

DOE PAGES

Varghese, Tony; Hollar, Courtney; Richardson, Joseph; ...

2016-09-12

Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstratemore » a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm 2 with 60°C temperature difference between the hot side and cold side. In conclusion, the highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications.« less

High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals

PubMed Central

Varghese, Tony; Hollar, Courtney; Richardson, Joseph; Kempf, Nicholas; Han, Chao; Gamarachchi, Pasindu; Estrada, David; Mehta, Rutvik J.; Zhang, Yanliang

2016-01-01

Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstrate a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm2 with 60 °C temperature difference between the hot side and cold side. The highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications. PMID:27615036

Thermoelectric materials and devices

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor); Talcott, Noel A. (Inventor)

2011-01-01

New thermoelectric materials comprise highly [111]-oriented twinned group IV alloys on the basal plane of trigonal substrates, which exhibit a high thermoelectric figure of merit and good material performance, and devices made with these materials.

Density of states-based design of metal oxide thin-film transistors for high mobility and superior photostability.

PubMed

Kim, Hyun-Suk; Park, Joon Seok; Jeong, Hyun-Kwang; Son, Kyoung Seok; Kim, Tae Sang; Seon, Jong-Baek; Lee, Eunha; Chung, Jae Gwan; Kim, Dae Hwan; Ryu, Myungkwan; Lee, Sang Yoon

2012-10-24

A novel method to design metal oxide thin-film transistor (TFT) devices with high performance and high photostability for next-generation flat-panel displays is reported. Here, we developed bilayer metal oxide TFTs, where the front channel consists of indium-zinc-oxide (IZO) and the back channel material on top of it is hafnium-indium-zinc-oxide (HIZO). Density-of-states (DOS)-based modeling and device simulation were performed in order to determine the optimum thickness ratio within the IZO/HIZO stack that results in the best balance between device performance and stability. As a result, respective values of 5 and 40 nm for the IZO and HIZO layers were determined. The TFT devices that were fabricated accordingly exhibited mobility values up to 48 cm(2)/(V s), which is much elevated compared to pure HIZO TFTs (∼13 cm(2)/(V s)) but comparable to pure IZO TFTs (∼59 cm(2)/(V s)). Also, the stability of the bilayer device (-1.18 V) was significantly enhanced compared to the pure IZO device (-9.08 V). Our methodology based on the subgap DOS model and simulation provides an effective way to enhance the device stability while retaining a relatively high mobility, which makes the corresponding devices suitable for ultradefinition, large-area, and high-frame-rate display applications.

Graphene-based vdW heterostructure Induced High-efficiency Thermoelectric Devices

NASA Astrophysics Data System (ADS)

Liang, Shijun; Ang, Lay Kee

Thermoelectric material (TE) can convert the heat into electricity to provide green energy source and its performance is characterized by a figure of merit (ZT) parameter. Traditional TE materials only give ZT equal to around 1 at room temperature. But, it is believed that materials with ZT >3 will find wide applications at this low temperature range. Prior studies have implied that the interrelation between electric conductivity and lattice thermal conductivity renders the goal of engineering ZT of bulk materials to reach ZT >3. In this work, we propose a high-efficiency van del Waals (vdW) heterostructure-based thermionic device with graphene electrodes, which is able to harvest wasted heat (around 400K) based on the newly established thermionic emission law of graphene electrodes instead of Seebeck effect, to boost the efficiency of power generation over 10% around room temperature. The efficiency can be above 20% if the Schottky barrier height and cross-plane lattice thermal conductivity of transition metal dichacogenides (TMD) materials can be fine-engineered. As a refrigerator at 260 K, the efficiency is 50% to 80% of Carnot efficiency. Finally, we identify two TMD materials as the ideal candidates of graphene/TMD/graphene devices based on the state-of-art technology.

High Performance Hermetic Package For LiNbO3 Electro-Optic Waveguide Devices

NASA Astrophysics Data System (ADS)

Preston, K. R.; Macdonald, B. M.; Harmon, R. A.; Ford, C. W.; Shaw, R. N.; Reid, I.; Davidson, J. H.; Beaumont, A. R.; Booth, R. C.

1989-02-01

A high performance fibre-tailed package for LiNbO3 electro-optic waveguide devices is described. The package is based around a hermetic metal submodule which contains no epoxy or other organic materials. The LiNbO3 chip is mounted using a soldering technique, and laser welding is used for fibre fixing to give stable, low loss optical coupling to single mode fibres. Optical reflections are minimised by the use of antireflective coatings on the fibre ends and waveguide facets. High speed electrical connections are made via coplanar glass-sealed leadthroughs to LiNb03 travelling wave devices, and packaged device operation to frequencies in excess of 4GHz is demonstrated.

Flexible MEMS: A novel technology to fabricate flexible sensors and electronics

NASA Astrophysics Data System (ADS)

Tu, Hongen

This dissertation presents the design and fabrication techniques used to fabricate flexible MEMS (Micro Electro Mechanical Systems) devices. MEMS devices and CMOS(Complementary Metal-Oxide-Semiconductor) circuits are traditionally fabricated on rigid substrates with inorganic semiconductor materials such as Silicon. However, it is highly desirable that functional elements like sensors, actuators or micro fluidic components to be fabricated on flexible substrates for a wide variety of applications. Due to the fact that flexible substrate is temperature sensitive, typically only low temperature materials, such as polymers, metals, and organic semiconductor materials, can be directly fabricated on flexible substrates. A novel technology based on XeF2(xenon difluoride) isotropic silicon etching and parylene conformal coating, which is able to monolithically incorporate high temperature materials and fluidic channels, was developed at Wayne State University. The technology was first implemented in the development of out-of-plane parylene microneedle arrays that can be individually addressed by integrated flexible micro-channels. These devices enable the delivery of chemicals with controlled temporal and spatial patterns and allow us to study neurotransmitter-based retinal prosthesis. The technology was further explored by adopting the conventional SOI-CMOS processes. High performance and high density CMOS circuits can be first fabricated on SOI wafers, and then be integrated into flexible substrates. Flexible p-channel MOSFETs (Metal-Oxide-Semiconductor Field-Effect-Transistors) were successfully integrated and tested. Integration of pressure sensors and flow sensors based on single crystal silicon has also been demonstrated. A novel smart yarn technology that enables the invisible integration of sensors and electronics into fabrics has been developed. The most significant advantage of this technology is its post-MEMS and post-CMOS compatibility. Various high-performance MEMS devices and electronics can be integrated into flexible substrates. The potential of our technology is enormous. Many wearable and implantable devices can be developed based on this technology.

Collection-limited theory interprets the extraordinary response of single semiconductor organic solar cells

DOE PAGES

Ray, Biswajit; Baradwaj, Aditya G.; Khan, Mohammad Ryyan; ...

2015-08-19

The bulk heterojunction (BHJ) organic photovoltaic (OPV) architecture has dominated the literature due to its ability to be implemented in devices with relatively high efficiency values. However, a simpler device architecture based on a single organic semiconductor (SS-OPV) offers several advantages: it obviates the need to control the highly system-dependent nanoscale BHJ morphology, and therefore, would allow the use of broader range of organic semiconductors. Unfortunately, the photocurrent in standard SS-OPV devices is typically very low, which generally is attributed to inefficient charge separation of the photogenerated excitons. In this paper, we show that the short-circuit current density from SS-OPVmore » devices can be enhanced significantly (~100-fold) through the use of inverted device configurations, relative to a standard OPV device architecture. This result suggests that charge generation may not be the performance bottleneck in OPV device operation. Instead, poor charge collection, caused by defect-induced electric field screening, is most likely the primary performance bottleneck in regular-geometry SS-OPV cells. We justify this hypothesis by: ( i) detailed numerical simulations, ( ii) electrical characterization experiments of functional SS-OPV devices using multiple polymers as active layer materials, and ( iii) impedance spectroscopy measurements. Furthermore, we show that the collection-limited photocurrent theory consistently interprets typical characteristics of regular SS-OPV devices. Finally, these insights should encourage the design and OPV implementation of high-purity, high-mobility polymers, and other soft materials that have shown promise in organic field-effect transistor applications, but have not performed well in BHJ OPV devices, wherein they adopt less-than-ideal nanostructures when blended with electron-accepting materials.« less

Quantum junction solar cells.

PubMed

Tang, Jiang; Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Wang, Xihua; Furukawa, Melissa; Levina, Larissa; Sargent, Edward H

2012-09-12

Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO(2)); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics.

Molecular materials for high performance OPV devices (Conference Presentation)

NASA Astrophysics Data System (ADS)

Jones, David J.

2016-09-01

We recently reported the high performing molecular donor for OPV devices based on a benzodithiophene core, a terthiophene bridge and a rhodamine acceptor (BTR) [1]. In this work we optimized side-chain placement of a known chromophore by ensuring the thiophene hexyl side-chains are regioregular, which should allow the chromophore to lie flat. The unexpected outcome was a nematic liquid crystalline material with significantly improved performance (now 9.6% PCE), excellent charge transport properties, reduced geminate recombination rates and excellent performance with active layers up to 400nm. Three phase changes were indicated by DSC analysis with a melt to a crystalline domain at 175 oC, transition to a nematic liquid crystalline domain at 186 oC and an isotropic melt at 196 oC. In our desire to better understand the structure property relationships of this class of p-type organic semiconductor we have synthesized a series of analogues where the length of the chromophore has been altered through modification of the oligothiophene bridge to generate, the monothiophene (BMR), the bisthiophene (BBR), the known terthiophene (BTR), the quaterthiophene (BQR) and the pentathiophene (BPR). BMR, BBR and BPR have clean melting points while BQR, like BTR shows a complicated series of phase transitions. Device efficiencies after solvent vapour annealing are BMR (3.5%), BBR (6.0%), BTR (9.3%), BQR (9.4%), and BPR (8.7%) unoptimised. OPV devices with BTR in the active layer are not stable under thermal annealing, however the bridge extended BQR and BPR form thermally stable devices. We are currently optimising these devices, but initial results indicate PCEs >9% for thermally annealed devices containing BQR, while BPR devices have not yet been optimised and have PCEs > 8%. In order to develop the device performance we have included BQR in ternary devices with the commercially available PTB7-Th and we report device efficiencies of over 10.5%. We are currently optimising device assembly and annealing conditions and relating these back to key materials properties. I will discuss the development of these new materials, their materials properties, structural data, and optimised device performance. I will examination of chromophore length on the Nematic Liquid Crystalline properties and on materials development and performance resulting in materials with > 9% PCE in OPV. [1] Sun, K.; Xiao, Z.; Lu, S.; Zajaczkowski, W.; Pisula, W.; Hanssen, E.; White, J. M.; Williamson, R. M.; Subbiah, J.; Ouyang, J.; Holmes, A. B.; Wong, W. W.; Jones, D. J., Nat. Commun. 2015, 6, 6013. DOI: 10.1038/ncomms7013

Temperature dependent simulation of diamond depleted Schottky PIN diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti

2016-06-14

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond.more » The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.« less

Use of organic precursors and graphenes in the controlled synthesis of carbon-containing nanomaterials for energy storage and conversion.

PubMed

Yang, Shubin; Bachman, Robert E; Feng, Xinliang; Müllen, Klaus

2013-01-15

The development of high-performance electrochemical energy storage and conversion devices, including supercapacitors, lithium-ion batteries, and fuel cells, is an important step on the road to alternative energy technologies. Carbon-containing nanomaterials (CCNMs), defined here as pure carbon materials and carbon/metal (oxide, hydroxide) hybrids with structural features on the nanometer scale, show potential application in such devices. Because of their pronounced electrochemical activity, high chemical and thermal stability and low cost, researchers are interested in CCNMs to serve as electrodes in energy-related devices. Various all-carbon materials are candidates for electrochemical energy storage and conversion devices. Furthermore, carbon-based hybrid materials, which consist of a carbon component with metal oxide- or metal hydroxide-based nanostructures, offer the opportunity to combine the attractive properties of these two components and tune the behavior of the resulting materials. As such, the design and synthesis of CCNMs provide an attractive route for the construction of high-performance electrode materials. Studies in these areas have revealed that both the composition and the fabrication protocol employed in preparing CCNMs influence the morphology and microstructure of the resulting material and its electrochemical performance. Consequently, researchers have developed several synthesis strategies, including hard-templated, soft-templated, and template-free synthesis of CCNMs. In this Account, we focus on recent advances in the controlled synthesis of such CCNMs and the potential of the resulting materials for energy storage or conversion applications. The Account is divided into four major categories based on the carbon precursor employed in the synthesis: low molecular weight organic or organometallic molecules, hyperbranched or cross-linked polymers consisting of aromatic subunits, self-assembling discotic molecules, and graphenes. In each case, we highlight representative examples of CCNMs with both new nanostructures and electrochemical performance suitable for energy storage or conversion applications. In addition, this Account provides an overall perspective on the current state of efforts aimed at the controlled synthesis of CCNMs and identifies some of the remaining challenges.

De Novo Design of Boron-Based Host Materials for Highly Efficient Blue and White Phosphorescent OLEDs with Low Efficiency Roll-Off.

PubMed

Xue, Miao-Miao; Huang, Chen-Chao; Yuan, Yi; Cui, Lin-Song; Li, Yong-Xi; Wang, Bo; Jiang, Zuo-Quan; Fung, Man-Keung; Liao, Liang-Sheng

2016-08-10

Borane is an excellent electron-accepting species, and its derivatives have been widely used in a variety of fields. However, the use of borane derivatives as host materials in OLEDs has rarely reported because the device performance is generally not satisfactory. In this work, two novel spiro-bipolar hosts with incorporated borane were designed and synthesized. The strategies used in preparing these materials were to increase the spatial separation of the highest occupied molecular orbitals (HOMOs) and lowest unoccupied molecular orbitals (LUMOs) in the molecules, tune the connecting positions of functional groups, and incorporate specific functional groups with desirable thermal stability. Based on these designs, phosphorescent OLEDs with borane derivatives as hosts and with outstanding device performances were obtained. In particular, devices based on SAF-3-DMB/FIrpic exhibited an external quantum efficiency (EQE) of >25%. More encouragingly, the device was found to have quite a low efficiency roll-off, giving an efficiency of >20% even at a high brightness of 10000 cd/m(2). Furthermore, the EQE of the three-color-based (R + G + B) white OLED employing SAF-3-DMB as a host was also as high as 22.9% with CIE coordinates of (x, y) = (0.40, 0.48). At a brightness of 5000 cd/m(2), there was only a 3% decrease in EQE from its maximum value, implying a very low efficiency roll-off.

Deoxyribonucleic acid (DNA) cladding layers for nonlinear-optic-polymer-based electro-optic devices

NASA Astrophysics Data System (ADS)

Grote, James G.; Ogata, Naoya; Diggs, Darnell E.; Hopkins, Frank K.

2003-07-01

Nonlinear optic (NLO) polymer based electro-optic devices have been achieving world record low half wave voltages and high frequencies over the last 2-3 years. Part of the advancement is through the use of relatively more conductive polymers for the cladding layers. Based on the current materials available for these cladding materials, however, the desired optical and electromagnetic properites are being balanced for materials processability. One does not want the solvent present in one layer to dissovle the one deposited underneath, or be dissolved by the one being deposited on top. Optimized polymer cladding materials, to further enhance device performance, are continuing to be investigated. Thin films of deoxyribonucleic acid (DNA), derived from salmon sperm, show promise in providing both the desired optical and magnetic properties, as well as the desired resistance to various solvents used for NLO polymer device fabrication. Thin films of DNA were deposited on glass and silicon substrates and the film quality, optical and electromagnetic properties and resistance to various solvents were characterized.

Deoxyribonucleic acid (DNA)-based optical materials

NASA Astrophysics Data System (ADS)

Grote, James G.; Heckman, Emily M.; Hagen, Joshua A.; Yaney, Perry P.; Subramanyam, Guru; Clarson, Stephen J.; Diggs, Darnell E.; Nelson, Robert L.; Zetts, John S.; Hopkins, F. Kenneth; Ogata, Naoya

2004-12-01

Optical materials for waveguiding applications must possess the desired optical and electromagnetic properties for optimal device performance. Purified deoxyribonucleic acid (DNA), derived from salmon sperm, has been investigated for use as an optical waveguide material. In this paper we present the materials processing and optical and electromagnetic characterization of this purified DNA to render a high quality, low loss optical waveguide material.

Building Interfaces: Mechanisms, fabrication, and applications at the biotic/abiotic interface for silk fibroin based bioelectronic and biooptical devices

NASA Astrophysics Data System (ADS)

Brenckle, Mark

Recent efforts in bioelectronics and biooptics have led to a shift in the materials and form factors used to make medical devices, including high performance, implantable, and wearable sensors. In this context, biopolymer-based devices must be processed to interface the soft, curvilinear biological world with the rigid, inorganic world of traditional electronics and optics. This poses new material-specific fabrication challenges in designing such devices, which in turn requires further understanding of the fundamental physical behaviors of the materials in question. As a biopolymer, silk fibroin protein has remarkable promise in this space, due to its bioresorbability, mechanical strength, optical clarity, ability to be reshaped on the micro- and nano-scale, and ability to stabilize labile compounds. Application of this material to devices at the biotic/abiotic interface will require the development of fabrication techniques for nano-patterning, lithography, multilayer adhesion, and transfer printing in silk materials. In this work, we address this need through fundamental study of the thermal and diffusional properties of silk protein as it relates to these fabrication strategies. We then leverage these properties to fabricate devices well suited to the biotic/abiotic interface in three areas: shelf-ready sensing, implantable transient electronics, and wearable biosensing. These example devices will illustrate the advantages of silk in this class of bioelectronic and biooptical devices, from fundamentals through application, and contribute to a silk platform for the development of future devices that combine biology with high technology.

Stepwise heating in Stille polycondensation toward no batch-to-batch variations in polymer solar cell performance.

PubMed

Lee, Sang Myeon; Park, Kwang Hyun; Jung, Seungon; Park, Hyesung; Yang, Changduk

2018-05-14

For a given π-conjugated polymer, the batch-to-batch variations in molecular weight (M w ) and polydispersity index (Ð) can lead to inconsistent process-dependent material properties and consequent performance variations in the device application. Using a stepwise-heating protocol in the Stille polycondensation in conjunction with optimized processing, we obtained an ultrahigh-quality PTB7 polymer having high M w and very narrow Ð. The resulting ultrahigh-quality polymer-based solar cells demonstrate up to 9.97% power conversion efficiencies (PCEs), which is over 24% enhancement from the control devices fabricated with commercially available PTB7. Moreover, we observe almost negligible batch-to-batch variations in the overall PCE values from ultrahigh-quality polymer-based devices. The proposed stepwise polymerization demonstrates a facile and effective strategy for synthesizing high-quality semiconducting polymers that can significantly improve device yield in polymer-based solar cells, an important factor for the commercialization of organic solar cells, by mitigating device-to-device variations.

Significant Performance Enhancement in Asymmetric Supercapacitors based on Metal Oxides, Carbon nanotubes and Neutral Aqueous Electrolyte

PubMed Central

Singh, Arvinder; Chandra, Amreesh

2015-01-01

Amongst the materials being investigated for supercapacitor electrodes, carbon based materials are most investigated. However, pure carbon materials suffer from inherent physical processes which limit the maximum specific energy and power that can be achieved in an energy storage device. Therefore, use of carbon-based composites with suitable nano-materials is attaining prominence. The synergistic effect between the pseudocapacitive nanomaterials (high specific energy) and carbon (high specific power) is expected to deliver the desired improvements. We report the fabrication of high capacitance asymmetric supercapacitor based on electrodes of composites of SnO2 and V2O5 with multiwall carbon nanotubes and neutral 0.5 M Li2SO4 aqueous electrolyte. The advantages of the fabricated asymmetric supercapacitors are compared with the results published in the literature. The widened operating voltage window is due to the higher over-potential of electrolyte decomposition and a large difference in the work functions of the used metal oxides. The charge balanced device returns the specific capacitance of ~198 F g−1 with corresponding specific energy of ~89 Wh kg−1 at 1 A g−1. The proposed composite systems have shown great potential in fabricating high performance supercapacitors. PMID:26494197

Significant Performance Enhancement in Asymmetric Supercapacitors based on Metal Oxides, Carbon nanotubes and Neutral Aqueous Electrolyte

NASA Astrophysics Data System (ADS)

Singh, Arvinder; Chandra, Amreesh

2015-10-01

Amongst the materials being investigated for supercapacitor electrodes, carbon based materials are most investigated. However, pure carbon materials suffer from inherent physical processes which limit the maximum specific energy and power that can be achieved in an energy storage device. Therefore, use of carbon-based composites with suitable nano-materials is attaining prominence. The synergistic effect between the pseudocapacitive nanomaterials (high specific energy) and carbon (high specific power) is expected to deliver the desired improvements. We report the fabrication of high capacitance asymmetric supercapacitor based on electrodes of composites of SnO2 and V2O5 with multiwall carbon nanotubes and neutral 0.5 M Li2SO4 aqueous electrolyte. The advantages of the fabricated asymmetric supercapacitors are compared with the results published in the literature. The widened operating voltage window is due to the higher over-potential of electrolyte decomposition and a large difference in the work functions of the used metal oxides. The charge balanced device returns the specific capacitance of ~198 F g-1 with corresponding specific energy of ~89 Wh kg-1 at 1 A g-1. The proposed composite systems have shown great potential in fabricating high performance supercapacitors.

Solid-State Thin-Film Supercapacitors with Ultrafast Charge/Discharge Based on N-Doped-Carbon-Tubes/Au-Nanoparticles-Doped-MnO2 Nanocomposites.

PubMed

Lv, Qiying; Wang, Shang; Sun, Hongyu; Luo, Jun; Xiao, Jian; Xiao, JunWu; Xiao, Fei; Wang, Shuai

2016-01-13

Although carbonaceous materials possess long cycle stability and high power density, their low-energy density greatly limits their applications. On the contrary, metal oxides are promising pseudocapacitive electrode materials for supercapacitors due to their high-energy density. Nevertheless, poor electrical conductivity of metal oxides constitutes a primary challenge that significantly limits their energy storage capacity. Here, an advanced integrated electrode for high-performance pseudocapacitors has been designed by growing N-doped-carbon-tubes/Au-nanoparticles-doped-MnO2 (NCTs/ANPDM) nanocomposite on carbon fabric. The excellent electrical conductivity and well-ordered tunnels of NCTs together with Au nanoparticles of the electrode cause low internal resistance, good ionic contact, and thus enhance redox reactions for high specific capacitance of pure MnO2 in aqueous electrolyte, even at high scan rates. A prototype solid-state thin-film symmetric supercapacitor (SSC) device based on NCTs/ANPDM exhibits large energy density (51 Wh/kg) and superior cycling performance (93% after 5000 cycles). In addition, the asymmetric supercapacitor (ASC) device assembled from NCTs/ANPDM and Fe2O3 nanorods demonstrates ultrafast charge/discharge (10 V/s), which is among the best reported for solid-state thin-film supercapacitors with both electrodes made of metal oxide electroactive materials. Moreover, its superior charge/discharge behavior is comparable to electrical double layer type supercapacitors. The ASC device also shows superior cycling performance (97% after 5000 cycles). The NCTs/ANPDM nanomaterial demonstrates great potential as a power source for energy storage devices.

Performance evaluation of a high power DC-DC boost converter for PV applications using SiC power devices

NASA Astrophysics Data System (ADS)

Almasoudi, Fahad M.; Alatawi, Khaled S.; Matin, Mohammad

2016-09-01

The development of Wide band gap (WBG) power devices has been attracted by many commercial companies to be available in the market because of their enormous advantages over the traditional Si power devices. An example of WBG material is SiC, which offers a number of advantages over Si material. For example, SiC has the ability of blocking higher voltages, reducing switching and conduction losses and supports high switching frequency. Consequently, SiC power devices have become the affordable choice for high frequency and power application. The goal of this paper is to study the performance of 4.5 kW, 200 kHz, 600V DC-DC boost converter operating in continuous conduction mode (CCM) for PV applications. The switching behavior and turn on and turn off losses of different switching power devices such as SiC MOSFET, SiC normally ON JFET and Si MOSFET are investigated and analyzed. Moreover, a detailed comparison is provided to show the overall efficiency of the DC-DC boost converter with different switching power devices. It is found that the efficiency of SiC power switching devices are higher than the efficiency of Si-based switching devices due to low switching and conduction losses when operating at high frequencies. According to the result, the performance of SiC switching power devices dominate the conventional Si power devices in terms of low losses, high efficiency and high power density. Accordingly, SiC power switching devices are more appropriate for PV applications where a converter of smaller size with high efficiency, and cost effective is required.

Mechanical flip-chip for ultra-high electron mobility devices

DOE PAGES

Bennaceur, Keyan; Schmidt, Benjamin A.; Gaucher, Samuel; ...

2015-09-22

In this study, electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG material, which is in many cases detrimental to its electron mobility. Here we propose an alternative process which does not require any processing of the 2DEG material other than for the ohmic contacts. Thismore » approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high electron mobility.« less

Superlight, Mechanically Flexible, Thermally Superinsulating, and Antifrosting Anisotropic Nanocomposite Foam Based on Hierarchical Graphene Oxide Assembly.

PubMed

Peng, Qingyu; Qin, Yuyang; Zhao, Xu; Sun, Xianxian; Chen, Qiang; Xu, Fan; Lin, Zaishan; Yuan, Ye; Li, Ying; Li, Jianjun; Yin, Weilong; Gao, Chao; Zhang, Fan; He, Xiaodong; Li, Yibin

2017-12-20

Lightweight, high-performance, thermally insulating, and antifrosting porous materials are in increasing demand to improve energy efficiency in many fields, such as aerospace and wearable devices. However, traditional thermally insulating materials (porous ceramics, polymer-based sponges) could not simultaneously meet these demands. Here, we propose a hierarchical assembly strategy for producing nanocomposite foams with lightweight, mechanically flexible, superinsulating, and antifrosting properties. The nanocomposite foams consist of a highly anisotropic reduced graphene oxide/polyimide (abbreviated as rGO/PI) network and hollow graphene oxide microspheres. The hierarchical nanocomposite foams are ultralight (density of 9.2 mg·cm -3 ) and exhibit ultralow thermal conductivity of 9 mW·m -1 ·K -1 , which is about a third that of traditional polymer-based insulating materials. Meanwhile, the nanocomposite foams show excellent icephobic performance. Our results show that hierarchical nanocomposite foams have promising applications in aerospace, wearable devices, refrigerators, and liquid nitrogen/oxygen transportation.

A TiAlCu Metallization for ` n' Type CoSb_x Skutterudites with Improved Performance for High-Temperature Energy Harvesting Applications

NASA Astrophysics Data System (ADS)

Rao, Ashwin; Bosak, Gregg; Joshi, Binay; Keane, Jennifer; Nally, Luke; Peng, Adam; Perera, Susanthri; Waring, Alfred; Poudel, Bed

2017-04-01

The choice of the appropriate metallizing layer for high-temperature thermoelectric (TE) materials is a tricky task and poses varied challenges to researchers. In this work, a n type TiAl metallizing layer (90% Ti with 10% Al by weight with a copper foil) is proposed for a Yb_{0.2}Co4Sb_{12} skutterudite (SK) TE material coupled with a standard ` p type' SK base of Nd_{0.45}Ce_{0.45}Fe_{3.5}Co_{0.5}Sb_{12} with a 60:12:28% Fe:Ni:Cr metallizing layer. The n type and p type nanostructured SK powders are sintered at high temperatures and pressures in a DC hot press from which a TE device is assembled using diced, polished and property characterized TE legs (high figure of merit zT of 1.4 for n type and 1.2 for p type, respectively). The device is evaluated for functional degradation with repeated cycling to 500°C hot side (HS) and 50°C cold side (CS) temperatures in a specially designed high-vacuum test rig with key TE properties like peak power, open circuit voltage, and material internal resistance continuously recorded over each cycle. The device shows stable performance with <7% drop in TE harvested power over 2500 thermal cycles. With the industry benchmark for evaluating TE device performance being around 1000 thermal cycles (<10% drop in TE power over time), the study indicates stable performance of the n type TiAl metallizing layer over the device lifetime.

Bioinspired Graphene-Based Nanocomposites and Their Application in Flexible Energy Devices.

PubMed

Wan, Sijie; Peng, Jingsong; Jiang, Lei; Cheng, Qunfeng

2016-09-01

Graphene is the strongest and stiffest material ever identified and the best electrical conductor known to date, making it an ideal candidate for constructing nanocomposites used in flexible energy devices. However, it remains a great challenge to assemble graphene nanosheets into macro-sized high-performance nanocomposites in practical applications of flexible energy devices using traditional approaches. Nacre, the gold standard for biomimicry, provides an excellent example and guideline for assembling two-dimensional nanosheets into high-performance nanocomposites. This review summarizes recent research on the bioinspired graphene-based nanocomposites (BGBNs), and discusses different bioinspired assembly strategies for constructing integrated high-strength and -toughness graphene-based nanocomposites through various synergistic effects. Fundamental properties of graphene-based nanocomposites, such as strength, toughness, and electrical conductivities, are highlighted. Applications of the BGBNs in flexible energy devices, as well as potential challenges, are addressed. Inspired from the past work done by the community a roadmap for the future of the BGBNs in flexible energy device applications is depicted. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A novel high-performance self-powered ultraviolet photodetector: Concept, analytical modeling and analysis

NASA Astrophysics Data System (ADS)

Ferhati, H.; Djeffal, F.

2017-12-01

In this paper, a new MSM-UV-photodetector (PD) based on dual wide band-gap material (DM) engineering aspect is proposed to achieve high-performance self-powered device. Comprehensive analytical models for the proposed sensor photocurrent and the device properties are developed incorporating the impact of DM aspect on the device photoelectrical behavior. The obtained results are validated with the numerical data using commercial TCAD software. Our investigation demonstrates that the adopted design amendment modulates the electric field in the device, which provides the possibility to drive appropriate photo-generated carriers without an external applied voltage. This phenomenon suggests achieving the dual role of effective carriers' separation and an efficient reduce of the dark current. Moreover, a new hybrid approach based on analytical modeling and Particle Swarm Optimization (PSO) is proposed to achieve improved photoelectric behavior at zero bias that can ensure favorable self-powered MSM-based UV-PD. It is found that the proposed design methodology has succeeded in identifying the optimized design that offers a self-powered device with high-responsivity (98 mA/W) and superior ION/IOFF ratio (480 dB). These results make the optimized MSM-UV-DM-PD suitable for providing low cost self-powered devices for high-performance optical communication and monitoring applications.

Review of electronic transport models for thermoelectric materials

NASA Astrophysics Data System (ADS)

Bulusu, A.; Walker, D. G.

2008-07-01

Thermoelectric devices have gained importance in recent years as viable solutions for applications such as spot cooling of electronic components, remote power generation in space stations and satellites etc. These solid-state devices have long been known for their reliability rather than their efficiency; they contain no moving parts, and their performance relies primarily on material selection, which has not generated many excellent candidates. Research in recent years has been focused on developing both thermoelectric structures and materials that have high efficiency. In general, thermoelectric research is two-pronged with (1) experiments focused on finding new materials and structures with enhanced thermoelectric performance and (2) analytical models that predict thermoelectric behavior to enable better design and optimization of materials and structures. While numerous reviews have discussed the importance of and dependence on materials for thermoelectric performance, an overview of how to predict the performance of various materials and structures based on fundamental quantities is lacking. In this paper we present a review of the theoretical models that were developed since thermoelectricity was first observed in 1821 by Seebeck and how these models have guided experimental material search for improved thermoelectric devices. A new quantum model is also presented, which provides opportunities for the optimization of nanoscale materials to enhance thermoelectric performance.

Screening of inorganic wide-bandgap p-type semiconductors for high performance hole transport layers in organic photovoltaic devices

NASA Astrophysics Data System (ADS)

Ginley, David; Zakutayev, Andriy; Garcia, Andreas; Widjonarko, Nicodemus; Ndione, Paul; Sigdel, Ajaya; Parilla, Phillip; Olson, Dana; Perkins, John; Berry, Joseph

2011-03-01

We will report on the development of novel inorganic hole transport layers (HTL) for organic photovoltaics (OPV). All the studied materials belong to the general class of wide-bandgap p-type oxide semiconductors. Potential candidates suitable for HTL applications include SnO, NiO, Cu2O (and related CuAlO2, CuCrO2, SrCu2O4 etc) and Co3O4 (and related ZnCo2O4, NiCo2O4, MgCo2O4 etc.). Materials have been optimized by high-throughput combinatorial approaches. The thin films were deposited by RF sputtering and pulsed laser deposition at ambient and elevated temperatures. Performance of the inorganic HTLs and that of the reference organic PEDOT:PSS HTL were compared by measuring the power conversion efficiencies and spectral responses of the P3HT/PCBM- and PCDTBT/PCBM-based OPV devices. Preliminary results indicate that Co3O4-based HTLs have performance comparable to that of our previously reported NiOs and PEDOT:PSS HTLs, leading to a power conversion efficiency of about 4 percent. The effect of composition and work function of the ternary materials on their performance in OPV devices is under investigation.

Development of novel technologies to enhance performance and reliability of III-Nitride avalanche photodiodes

NASA Astrophysics Data System (ADS)

Suvarna, Puneet Harischandra

Solar-blind ultraviolet avalanche photodiodes are an enabling technology for applications in the fields of astronomy, communication, missile warning systems, biological agent detection and particle physics research. Avalanche photodiodes (APDs) are capable of detecting low-intensity light with high quantum efficiency and signal-to-noise ratio without the need for external amplification. The properties of III-N materials (GaN and AlGaN) are promising for UV photodetectors that are highly efficient, radiation-hard and capable of visible-blind or solar-blind operation without the need for external filters. However, the realization of reliable and high performance III-N APDs and imaging arrays has several technological challenges. The high price and lack of availability of bulk III-N substrates necessitates the growth of III-Ns on lattice mismatched substrates leading to a high density of dislocations in the material that can cause high leakage currents, noise and premature breakdown in APDs. The etched sidewalls of III-N APDs and high electric fields at contact edges are also detrimental to APD performance and reliability. In this work, novel technologies have been developed and implemented that address the issues of performance and reliability in III-Nitride based APDs. To address the issue of extended defects in the bulk of the material, a novel pulsed MOCVD process was developed for the growth of AlGaN. This process enables growth of high crystal quality AlxGa1-xN with excellent control over composition, doping and thickness. The process has also been adapted for the growth of high quality III-N materials on silicon substrate for devices such as high electron mobility transistors (HEMTs). A novel post-growth defect isolation technique is also discussed that can isolate the impact of conductive defects from devices. A new sidewall passivation technique using atomic layer deposition (ALD) of dielectric materials was developed for III-N APDs that is effective in reducing the dark-current and trap states at sidewalls by close to an order of magnitude, leading to improved APD performance. Development and implementation of an ion implantation based contact edge termination technique for III-N APDs that helps prevent premature breakdown from the contact edge of the devices, has further lead to improved reliability. Finally novel improved III-N APD device designs are proposed using preliminary experiments and numerical simulations for future implementations.

High-energy green supercapacitor driven by ionic liquid electrolytes as an ultra-high stable next-generation energy storage device

NASA Astrophysics Data System (ADS)

Thangavel, Ranjith; Kannan, Aravindaraj G.; Ponraj, Rubha; Thangavel, Vigneysh; Kim, Dong-Won; Lee, Yun-Sung

2018-04-01

Development of supercapacitors with high energy density and long cycle life using sustainable materials for next-generation applications is of paramount importance. The ongoing challenge is to elevate the energy density of supercapacitors on par with batteries, while upholding the power and cyclability. In addition, attaining such superior performance with green and sustainable bio-mass derived compounds is very crucial to address the rising environmental concerns. Herein, we demonstrate the use of watermelon rind, a bio-waste from watermelons, towards high energy, and ultra-stable high temperature green supercapacitors with a high-voltage ionic liquid electrolyte. Supercapacitors assembled with ultra-high surface area, hierarchically porous carbon exhibits a remarkable performance both at room temperature and at high temperature (60 °C) with maximum energy densities of ∼174 Wh kg-1 (25 °C), and 177 Wh kg-1 (60 °C) - based on active mass of both electrodes. Furthermore, an ultra-high specific power of ∼20 kW kg-1 along with an ultra-stable cycling performance with 90% retention over 150,000 cycles has been achieved even at 60 °C, outperforming supercapacitors assembled with other carbon based materials. These results demonstrate the potential to develop high-performing, green energy storage devices using eco-friendly materials for next generation electric vehicles and other advanced energy storage systems.

Solution Adsorption Formation of a π-Conjugated Polymer/Graphene Composite for High-Performance Field-Effect Transistors.

PubMed

Liu, Yun; Hao, Wei; Yao, Huiying; Li, Shuzhou; Wu, Yuchen; Zhu, Jia; Jiang, Lei

2018-01-01

Semiconducting polymers with π-conjugated electronic structures have potential application in the large-scale printable fabrication of high-performance electronic and optoelectronic devices. However, owing to their poor environmental stability and high-cost synthesis, polymer semiconductors possess limited device implementation. Here, an approach for constructing a π-conjugated polymer/graphene composite material to circumvent these limitations is provided, and then this material is patterned into 1D arrays. Driven by the π-π interaction, several-layer polymers can be adsorbed onto the graphene planes. The low consumption of the high-cost semiconductor polymers and the mass production of graphene contribute to the low-cost fabrication of the π-conjugated polymer/graphene composite materials. Based on the π-conjugated system, a reduced π-π stacking distance between graphene and the polymer can be achieved, yielding enhanced charge-transport properties. Owing to the incorporation of graphene, the composite material shows improved thermal stability. More generally, it is believed that the construction of the π-conjugated composite shows clear possibility of integrating organic molecules and 2D materials into microstructure arrays for property-by-design fabrication of functional devices with large area, low cost, and high efficiency. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Batch-fabricated high-performance graphene Hall elements

PubMed Central

Xu, Huilong; Zhang, Zhiyong; Shi, Runbo; Liu, Honggang; Wang, Zhenxing; Wang, Sheng; Peng, Lian-Mao

2013-01-01

Hall elements are by far the most widely used magnetic sensor. In general, the higher the mobility and the thinner the active region of the semiconductor used, the better the Hall device. While most common magnetic field sensors are Si-based Hall sensors, devices made from III-V compounds tend to favor over that based on Si. However these devices are more expensive and difficult to manufacture than Si, and hard to be integrated with signal-processing circuits for extending function and enforcing performance. In this article we show that graphene is intrinsically an ideal material for Hall elements which may harness the remarkable properties of graphene, i.e. extremely high carrier mobility and atomically thin active body, to create ideal magnetic sensors with high sensitivity, excellent linearity and remarkable thermal stability. PMID:23383375

CMOS compatible electrode materials selection in oxide-based memory devices

NASA Astrophysics Data System (ADS)

Zhuo, V. Y.-Q.; Li, M.; Guo, Y.; Wang, W.; Yang, Y.; Jiang, Y.; Robertson, J.

2016-07-01

Electrode materials selection guidelines for oxide-based memory devices are constructed from the combined knowledge of observed device operation characteristics, ab-initio calculations, and nano-material characterization. It is demonstrated that changing the top electrode material from Ge to Cr to Ta in the Ta2O5-based memory devices resulted in a reduction of the operation voltages and current. Energy Dispersed X-ray (EDX) Spectrometer analysis clearly shows that the different top electrode materials scavenge oxygen ions from the Ta2O5 memory layer at various degrees, leading to different oxygen vacancy concentrations within the Ta2O5, thus the observed trends in the device performance. Replacing the Pt bottom electrode material with CMOS compatible materials (Ru and Ir) further reduces the power consumption and can be attributed to the modification of the Schottky barrier height and oxygen vacancy concentration at the electrode/oxide interface. Both trends in the device performance and EDX results are corroborated by the ab-initio calculations which reveal that the electrode material tunes the oxygen vacancy concentration via the oxygen chemical potential and defect formation energy. This experimental-theoretical approach strongly suggests that the proper selection of CMOS compatible electrode materials will create the critical oxygen vacancy concentration to attain low power memory performance.

Research Progress in MnO2 -Carbon Based Supercapacitor Electrode Materials.

PubMed

Zhang, Qun-Zheng; Zhang, Dian; Miao, Zong-Cheng; Zhang, Xun-Li; Chou, Shu-Lei

2018-04-30

With the serious impact of fossil fuels on the environment and the rapid development of the global economy, the development of clean and usable energy storage devices has become one of the most important themes of sustainable development in the world today. Supercapacitors are a new type of green energy storage device, with high power density, long cycle life, wide temperature range, and both economic and environmental advantages. In many industries, they have enormous application prospects. Electrode materials are an important factor affecting the performance of supercapacitors. MnO 2 -based materials are widely investigated for supercapacitors because of their high theoretical capacitance, good chemical stability, low cost, and environmental friendliness. To achieve high specific capacitance and high rate capability, the current best solution is to use MnO 2 and carbon composite materials. Herein, MnO 2 -carbon composite as supercapacitor electrode materials is reviewed including the synthesis method and research status in recent years. Finally, the challenges and future development directions of an MnO 2 -carbon based supercapacitor are summarized. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

3D Printed Bionic Nanodevices.

PubMed

Kong, Yong Lin; Gupta, Maneesh K; Johnson, Blake N; McAlpine, Michael C

2016-06-01

The ability to three-dimensionally interweave biological and functional materials could enable the creation of bionic devices possessing unique and compelling geometries, properties, and functionalities. Indeed, interfacing high performance active devices with biology could impact a variety of fields, including regenerative bioelectronic medicines, smart prosthetics, medical robotics, and human-machine interfaces. Biology, from the molecular scale of DNA and proteins, to the macroscopic scale of tissues and organs, is three-dimensional, often soft and stretchable, and temperature sensitive. This renders most biological platforms incompatible with the fabrication and materials processing methods that have been developed and optimized for functional electronics, which are typically planar, rigid and brittle. A number of strategies have been developed to overcome these dichotomies. One particularly novel approach is the use of extrusion-based multi-material 3D printing, which is an additive manufacturing technology that offers a freeform fabrication strategy. This approach addresses the dichotomies presented above by (1) using 3D printing and imaging for customized, hierarchical, and interwoven device architectures; (2) employing nanotechnology as an enabling route for introducing high performance materials, with the potential for exhibiting properties not found in the bulk; and (3) 3D printing a range of soft and nanoscale materials to enable the integration of a diverse palette of high quality functional nanomaterials with biology. Further, 3D printing is a multi-scale platform, allowing for the incorporation of functional nanoscale inks, the printing of microscale features, and ultimately the creation of macroscale devices. This blending of 3D printing, novel nanomaterial properties, and 'living' platforms may enable next-generation bionic systems. In this review, we highlight this synergistic integration of the unique properties of nanomaterials with the versatility of extrusion-based 3D printing technologies to interweave nanomaterials and fabricate novel bionic devices.

3D Printed Bionic Nanodevices

PubMed Central

Kong, Yong Lin; Gupta, Maneesh K.; Johnson, Blake N.; McAlpine, Michael C.

2016-01-01

Summary The ability to three-dimensionally interweave biological and functional materials could enable the creation of bionic devices possessing unique and compelling geometries, properties, and functionalities. Indeed, interfacing high performance active devices with biology could impact a variety of fields, including regenerative bioelectronic medicines, smart prosthetics, medical robotics, and human-machine interfaces. Biology, from the molecular scale of DNA and proteins, to the macroscopic scale of tissues and organs, is three-dimensional, often soft and stretchable, and temperature sensitive. This renders most biological platforms incompatible with the fabrication and materials processing methods that have been developed and optimized for functional electronics, which are typically planar, rigid and brittle. A number of strategies have been developed to overcome these dichotomies. One particularly novel approach is the use of extrusion-based multi-material 3D printing, which is an additive manufacturing technology that offers a freeform fabrication strategy. This approach addresses the dichotomies presented above by (1) using 3D printing and imaging for customized, hierarchical, and interwoven device architectures; (2) employing nanotechnology as an enabling route for introducing high performance materials, with the potential for exhibiting properties not found in the bulk; and (3) 3D printing a range of soft and nanoscale materials to enable the integration of a diverse palette of high quality functional nanomaterials with biology. Further, 3D printing is a multi-scale platform, allowing for the incorporation of functional nanoscale inks, the printing of microscale features, and ultimately the creation of macroscale devices. This blending of 3D printing, novel nanomaterial properties, and ‘living’ platforms may enable next-generation bionic systems. In this review, we highlight this synergistic integration of the unique properties of nanomaterials with the versatility of extrusion-based 3D printing technologies to interweave nanomaterials and fabricate novel bionic devices. PMID:27617026

Discovery of high-performance low-cost n-type Mg3Sb2-based thermoelectric materials with multi-valley conduction bands

PubMed Central

Zhang, Jiawei; Song, Lirong; Pedersen, Steffen Hindborg; Yin, Hao; Hung, Le Thanh; Iversen, Bo Brummerstedt

2017-01-01

Widespread application of thermoelectric devices for waste heat recovery requires low-cost high-performance materials. The currently available n-type thermoelectric materials are limited either by their low efficiencies or by being based on expensive, scarce or toxic elements. Here we report a low-cost n-type material, Te-doped Mg3Sb1.5Bi0.5, that exhibits a very high figure of merit zT ranging from 0.56 to 1.65 at 300−725 K. Using combined theoretical prediction and experimental validation, we show that the high thermoelectric performance originates from the significantly enhanced power factor because of the multi-valley band behaviour dominated by a unique near-edge conduction band with a sixfold valley degeneracy. This makes Te-doped Mg3Sb1.5Bi0.5 a promising candidate for the low- and intermediate-temperature thermoelectric applications. PMID:28059069

Characterization and modeling of the intrinsic properties of 1.5-micrometer gallium indium nitrogen arsenic antimonide/gallium arsenide laser

NASA Astrophysics Data System (ADS)

Goddard, Lynford

2005-12-01

Low cost access to optical communication networks is needed to satisfy the rapidly increasing demands of home-based high-speed Internet. Existing light sources in the low-loss 1.2--1.6mum telecommunication wavelength bandwidth are prohibitively expensive for large-scale deployment, e.g. incorporation in individual personal computers. Recently, we have extended the lasing wavelength of room-temperature CW GaInNAs(Sb) lasers grown monolithically on GaAs by MBE up to 1.52mum in an effort to replace the traditional, more expensive, InP-based devices. Besides lower cost wafers, GaInNAs(Sb) opto-electronic devices have fundamental material advantages over InP-based devices: a larger conduction band offset which reduces temperature sensitivity and enhances differential gain, a lattice match to a material with a large refractive index contrast, i.e. AlAs, which decreases the necessary number of mirror pairs in DBRs for VCSELs, and native oxide apertures for current confinement. High performance GaInNAs(Sb) edge-emitting lasers, VCSELs, and DFB lasers have been demonstrated throughout the entire telecommunication band. In this work, we analyze the intrinsic properties of the GaInNAsSb material system, e.g. recombination, gain, band structure and renormalization, and efficiency. Theoretical modeling is performed to calculate a map of the bandgap and effective masses for various material compositions. We also present device performance results, such as: room temperature CW threshold densities below 450A/cm2, quantum efficiencies above 50%, and over 425mW of total power from a SQW laser when mounted epi-up and minimally packaged. These results are generally 2--4x better than previous world records for GaAs based devices at 1.5mum. The high CW power and low threshold exhibited by these SQW lasers near 1.5mum make feasible many novel applications, such as broadband Raman fiber amplifiers and uncooled WDM at the chip scale. Device reliability of almost 500 hours at 200mW CW output power has also been demonstrated. Comparative experiments using innovative characterization techniques, such as: the multiple section absorption/gain method to explore the band structure, as well as the Z-parameter to analyze the dominant recombination processes, have identified the physical mechanisms responsible for improved performance. Also, by measuring the temperature dependence of relevant laser parameters, we have been able to simulate device operation while varying temperature and device geometry.

Materials, device, and interface engineering to improve polymer-based solar cells

NASA Astrophysics Data System (ADS)

Hau, Steven Kin

The continued depletion of fossil fuel resources has lead to the rise in energy production costs which has lead to the search for an economically viable alternative energy source. One alternative of particular interest is solar energy. A promising alternative to inorganic materials is organic semiconductor polymer solar cells due to their advantages of being cheaper, light weight, flexible and made into large areas by roll-to-roll processing. In this dissertation, an integrated approach is taken to improve the overall performance of polymer-based solar cells by the development of new polymer materials, device architectures, and interface engineering of the contacts between layers. First, a new class of metallated conjugated polymers is explored as potential solar cell materials. Systematic modifications to the molecular units on the main chain of amorphous metallated Pt-polymers show a correlation that improving charge carrier mobility also improves solar cell performance leading to mobilities as high as 1 x 10-2 cm2/V·s and efficiencies as high as 4.1%. Second, an inverted device architecture using a more air stable electrode (Ag) is demonstrated to improve the ambient stability of unencapsulated P3HT:PCBM devices showing over 80% efficiency retention after 40 days of exposure. To further demonstrate the potential for roll-to-roll processing of polymer solar cells, solution processed Ag-nanoparticles were used to replace the vacuum deposited Ag anode electrode for inverted solar cells showing efficiencies as high as 3%. In addition, solution processed polymer based electrodes were demonstrated as a replacement to the expensive and brittle indium tin oxide showing efficiencies of 3% on flexible substrate solar cells. Third, interface engineering of the n-type (high temperature sol-gel processed TiO2 or ZnO, low temperature processed ZnO nanoparticles) electron selective metal oxide contacts in inverted solar cells with self-assembled monolayers (SAM) show improved device performance. Modifying the n-type layer in inverted cells with C60-SAMs containing different anchoring groups leads to an improvement in photocurrent density and fill factor leading to efficiencies as high as 4.9%.

Radio-frequency flexible and stretchable electronics: the need, challenges and opportunities

NASA Astrophysics Data System (ADS)

Jung, Yei Hwan; Seo, Jung-Hun; Zhang, Huilong; Lee, Juhwan; Cho, Sang June; Chang, Tzu-Hsuan; Ma, Zhenqiang

2017-05-01

Successful integration of ultrathin flexible or stretchable systems with new applications, such as medical devices and biodegradable electronics, have intrigued many researchers and industries around the globe to seek materials and processes to create high-performance, non-invasive and cost-effective electronics to match those of state-of-the-art devices. Nevertheless, the crucial concept of transmitting data or power wirelessly for such unconventional devices has been difficult to realize due to limitations of radio-frequency (RF) electronics in individual components that form a wireless circuitry, such as antenna, transmission line, active devices, passive devices etc. To overcome such challenges, these components must be developed in a step-by-step manner, as each component faces a number of different challenges in ultrathin formats. Here, we report on materials and design considerations for fabricating flexible and stretchable electronics systems that operate in the microwave level. High-speed flexible active devices, including cost effective Si-based strained MOSFETs, GaAs-based HBTs and GaN-based HEMTs, performing at multi-gigahertz frequencies are presented. Furthermore, flexible or stretchable passive devices, including capacitors, inductors and transmission lines that are vital parts of a microwave circuitry are also demonstrated. We also present unique applications using the presented flexible or stretchable RF components, including wearable RF electronics and biodegradable RF electronics, which were impossible to achieve using conventional rigid, wafer-based technology. Further opportunities like implantable systems exist utilizing such ultrathin RF components, which are discussed in this report as well.

High-performance shape-engineerable thermoelectric painting

PubMed Central

Park, Sung Hoon; Jo, Seungki; Kwon, Beomjin; Kim, Fredrick; Ban, Hyeong Woo; Lee, Ji Eun; Gu, Da Hwi; Lee, Se Hwa; Hwang, Younghun; Kim, Jin-Sang; Hyun, Dow-Bin; Lee, Sukbin; Choi, Kyoung Jin; Jo, Wook; Son, Jae Sung

2016-01-01

Output power of thermoelectric generators depends on device engineering minimizing heat loss as well as inherent material properties. However, the device engineering has been largely neglected due to the limited flat or angular shape of devices. Considering that the surface of most heat sources where these planar devices are attached is curved, a considerable amount of heat loss is inevitable. To address this issue, here, we present the shape-engineerable thermoelectric painting, geometrically compatible to surfaces of any shape. We prepared Bi2Te3-based inorganic paints using the molecular Sb2Te3 chalcogenidometalate as a sintering aid for thermoelectric particles, with ZT values of 0.67 for n-type and 1.21 for p-type painted materials that compete the bulk values. Devices directly brush-painted onto curved surfaces produced the high output power of 4.0 mW cm−2. This approach paves the way to designing materials and devices that can be easily transferred to other applications. PMID:27834369

Efficient blue and green phosphorescent OLEDs with host material containing electronically isolated carbazolyl fragments

NASA Astrophysics Data System (ADS)

Grigalevicius, Saulius; Tavgeniene, Daiva; Krucaite, Gintare; Blazevicius, Dovydas; Griniene, Raimonda; Lai, Yi-Ning; Chiu, Hao-Hsuan; Chang, Chih-Hao

2018-05-01

Dry process-able host materials are well suited to realize high performance phosphorescent organic light-emitting diodes (OLED) with precise deposition of organic layers. We demonstrate in this study high efficiency green and blue phosphorescent OLED devices by employing 3-[bis(9-ethylcarbazol-3-yl)methyl]-9-hexylcarbazole based host material. By doping a typical green emitter of fac tris(2-phenylpyridine)iridium (Ir (ppy)3) in the compound the resultant dry-processed green device exhibited superior performance with low turn on voltage of 3.0 V and with peak efficiencies of 11.4%, 39.9 cd/A and 41.8 lm/W. When blue emitter of bis [2-(4,6-difluorophenyl)pyridinato-C2,N](picolinato)iridium (III) was used, the resultant blue device showed turn on voltage of 2.9 V and peak efficiencies of 9.4%, 21.4 cd/A and 21.7 lm/W. The high efficiencies may be attributed to the host possessing high triplet energy level, effective host-to-guest energy transfer and effective carrier injection balance.

Vanadium based materials as electrode materials for high performance supercapacitors

NASA Astrophysics Data System (ADS)

Yan, Yan; Li, Bing; Guo, Wei; Pang, Huan; Xue, Huaiguo

2016-10-01

As a kind of supercapacitors, pseudocapacitors have attracted wide attention in recent years. The capacitance of the electrochemical capacitors based on pseudocapacitance arises mainly from redox reactions between electrolytes and active materials. These materials usually have several oxidation states for oxidation and reduction. Many research teams have focused on the development of an alternative material for electrochemical capacitors. Many transition metal oxides have been shown to be suitable as electrode materials of electrochemical capacitors. Among them, vanadium based materials are being developed for this purpose. Vanadium based materials are known as one of the best active materials for high power/energy density electrochemical capacitors due to its outstanding specific capacitance and long cycle life, high conductivity and good electrochemical reversibility. There are different kinds of synthetic methods such as sol-gel hydrothermal/solvothermal method, template method, electrospinning method, atomic layer deposition, and electrodeposition method that have been successfully applied to prepare vanadium based electrode materials. In our review, we give an overall summary and evaluation of the recent progress in the research of vanadium based materials for electrochemical capacitors that include synthesis methods, the electrochemical performances of the electrode materials and the devices.

Ultrastable Photoelectrodes for Solar Water Splitting Based on Organic Metal Halide Perovskite Fabricated by Lift-Off Process.

PubMed

Nam, SeongSik; Mai, Cuc Thi Kim; Oh, Ilwhan

2018-05-02

Herein, we report an integrated photoelectrolysis of water employing organic metal halide (OMH) perovskite material. As generic OMH perovskite material and device architecture are highly susceptible to degradation by aqueous electrolytes, we have developed a versatile mold-cast and lift-off process to fabricate and assemble multipurpose metal encapsulation onto perovskite devices. With the metal encapsulation effectively protecting the perovskite cell and also functioning as electrocatalyst, the high-performance perovskite photoelectrodes exhibit high photovoltage and photocurrent that are effectively inherited from the original solid-state solar cell. More importantly, thus-fabricated perovskite photoelectrode demonstrates record-long unprecedented stability even at highly oxidizing potential in strong alkaline electrolyte. We expect that this versatile lift-off process can be adapted in a wide variety of photoelectrochemical devices to protect the material surfaces from corroding electrolyte and facilitate various electrochemical reactions.

Transparent, flexible, and high-performance supercapacitor based on ultrafine nickel cobaltite nanospheres

NASA Astrophysics Data System (ADS)

Liu, Xinyue; Wang, Jianxing; Yang, Guowei

2017-07-01

There has been growing interest in transparent and flexible electronic devices such as wrist watch, cell phone, and so on. These devices need the power sources which also have transparent and flexible features. Here, we demonstrate a transparent and flexible energy storage device with outstanding electrochemical performance, high energy density, and super-long life based on ultrafine NiCo2O4 nanospheres which are synthesized by an innovative method concerning laser ablation in liquid and hydrothermal process. The ultrafine NiCo2O4 nanospheres provide high electrochemical activity and the synthesized colloidal solution is suitable for transparent devices. The transparent and flexible device shows a high specific capacitance of 299.7 F/g at the scan rate of 1 mV/s and a long cycling life of 90.4% retention rate after 10,000 cycles at a scan rate of 10 mV/s, which is superior to that of previously reported transparent and flexible energy storage device. In addition, an optical transmittance up to 55% at the wavelength of 550 nm is obtained, and the bending test shows that the bending angle makes no difference to the specific capacitance of the device. In addition, it shows an outstanding energy density of 10.41 Wh/kg. The integrated electrochemical performances of the device are good based on NiCo2O4 nanospheres. These findings make the ultrafine NiCo2O4 nanospheres being promising electrode materials for transparent and flexible energy storage devices.

Simple and inexpensive micromachined aluminum microfluidic devices for acoustic focusing of particles and cells.

PubMed

Gautam, Gayatri P; Burger, Tobias; Wilcox, Andrew; Cumbo, Michael J; Graves, Steven W; Piyasena, Menake E

2018-05-01

We introduce a new method to construct microfluidic devices especially useful for bulk acoustic wave (BAW)-based manipulation of cells and microparticles. To obtain efficient acoustic focusing, BAW devices require materials that have high acoustic impedance mismatch relative to the medium in which the cells/microparticles are suspended and materials with a high-quality factor. To date, silicon and glass have been the materials of choice for BAW-based acoustofluidic channel fabrication. Silicon- and glass-based fabrication is typically performed in clean room facilities, generates hazardous waste, and can take several hours to complete the microfabrication. To address some of the drawbacks in fabricating conventional BAW devices, we explored a new approach by micromachining microfluidic channels in aluminum substrates. Additionally, we demonstrate plasma bonding of poly(dimethylsiloxane) (PDMS) onto micromachined aluminum substrates. Our goal was to achieve an approach that is both low cost and effective in BAW applications. To this end, we micromachined aluminum 6061 plates and enclosed the systems with a thin PDMS cover layer. These aluminum/PDMS hybrid microfluidic devices use inexpensive materials and are simply constructed outside a clean room environment. Moreover, these devices demonstrate effectiveness in BAW applications as demonstrated by efficient acoustic focusing of polystyrene microspheres, bovine red blood cells, and Jurkat cells and the generation of multiple focused streams in flow-through systems. Graphical abstract The aluminum acoustofluidic device and the generation of multinode focusing of particles.

Enhanced tolerance to stretch-induced performance degradation of stretchable MnO2-based supercapacitors.

PubMed

Huang, Yan; Huang, Yang; Meng, Wenjun; Zhu, Minshen; Xue, Hongtao; Lee, Chun-Sing; Zhi, Chunyi

2015-02-04

The performance of many stretchable electronics, such as energy storage devices and strain sensors, is highly limited by the structural breakdown arising from the stretch imposed. In this article, we focus on a detailed study on materials matching between functional materials and their conductive substrate, as well as enhancement of the tolerance to stretch-induced performance degradation of stretchable supercapacitors, which are essential for the design of a stretchable device. It is revealed that, being widely utilized as the electrode material of the stretchable supercapacitor, metal oxides such as MnO2 nanosheets have serious strain-induced performance degradation due to their rigid structure. In comparison, with conducting polymers like a polypyrrole (PPy) film as the electrochemically active material, the performance of stretchable supercapacitors can be well preserved under strain. Therefore, a smart design is to combine PPy with MnO2 nanosheets to achieve enhanced tolerance to strain-induced performance degradation of MnO2-based supercapacitors, which is realized by fabricating an electrode of PPy-penetrated MnO2 nanosheets. The composite electrodes exhibit a remarkable enhanced tolerance to strain-induced performance degradation with well-preserved performance over 93% under strain. The detailed morphology and electrochemical impedance variations are investigated for the mechanism analyses. Our work presents a systematic investigation on the selection and matching of electrode materials for stretchable supercapacitors to achieve high performance and great tolerance to strain, which may guide the selection of functional materials and their substrate materials for the next-generation of stretchable electronics.

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

NASA Astrophysics Data System (ADS)

Miao, Feng; Strachan, John Paul; Yang, J. Joshua; Yi, Wei; Goldfarb, Ilan; Zhang, M.-X.; Torrezan, Antonio C.; Eschbach, Peter; Kelley, Ronald D.; Medeiros-Ribeiro, Gilberto; Williams, R. Stanley

2012-02-01

Two major challenges for resistance memory devices (memristors) based on conductivity changes in oxide materials are better performance and understanding of the microscopic picture of the switching. After researchers' relentless pursuit for years, tantalum oxide-based memristors have rapidly risen to be the top candidate, showing fast speed, high endurance and excellent scalability. While the microscopic picture of these devices remains obscure, by employing a precise method for locating and directly visualizing the conduction channel, here we observed a nanoscale channel consisting of an amorphous Ta(O) solid solution surrounded by crystalline Ta2O5. Structural and chemical analyses of the channel combined with temperature dependent transport measurements revealed a unique resistance switching mechanism: the modulation of the channel elemental composition, and thus the conductivity, by the cooperative influence of drift, diffusion and thermophoresis, which seem to enable the high switching performance observed. (Miao*, Strachan*, Yang* et al., Advanced Materials. DOI: 10.1002/adma201103379 (2011))

Impact of device engineering on analog/RF performances of tunnel field effect transistors

NASA Astrophysics Data System (ADS)

Vijayvargiya, V.; Reniwal, B. S.; Singh, P.; Vishvakarma, S. K.

2017-06-01

The tunnel field effect transistor (TFET) and its analog/RF performance is being aggressively studied at device architecture level for low power SoC design. Therefore, in this paper we have investigated the influence of the gate-drain underlap (UL) and different dielectric materials for the spacer and gate oxide on DG-TFET (double gate TFET) and its analog/RF performance for low power applications. Here, it is found that the drive current behavior in DG-TFET with a UL feature while implementing dielectric material for the spacer is different in comparison to that of DG-FET. Further, hetero gate dielectric-based DG-TFET (HGDG-TFET) is more resistive against drain-induced barrier lowering (DIBL) as compared to DG-TFET with high-k (HK) gate dielectric. Along with that, as compared to DG-FET, this paper also analyses the attributes of UL and dielectric material on analog/RF performance of DG-TFET in terms of transconductance (gm ), transconductance generation factor (TGF), capacitance, intrinsic resistance (Rdcr), cut-off frequency (F T), and maximum oscillation frequency (F max). The LK spacer-based HGDG-TFET with a gate-drain UL has the potential to improve the RF performance of device.

Recent advances in polymer solar cells: realization of high device performance by incorporating water/alcohol-soluble conjugated polymers as electrode buffer layer.

PubMed

He, Zhicai; Wu, Hongbin; Cao, Yong

2014-02-01

This Progress Report highlights recent advances in polymer solar cells with special attention focused on the recent rapid-growing progress in methods that use a thin layer of alcohol/water-soluble conjugated polymers as key component to obtain optimized device performance, but also discusses novel materials and device architectures made by major prestigious institutions in this field. We anticipate that due to drastic improvements in efficiency and easy utilization, this method opens up new opportunities for PSCs from various material systems to improve towards 10% efficiency, and many novel device structures will emerge as suitable architectures for developing the ideal roll-to-roll type processing of polymer-based solar cells. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Shear-horizontal surface acoustic wave phononic device with high density filling material for ultra-low power sensing applications

NASA Astrophysics Data System (ADS)

Richardson, M.; Sankaranarayanan, S. K. R. S.; Bhethanabotla, V. R.

2014-06-01

Finite element simulations of a phononic shear-horizontal surface acoustic wave (SAW) sensor based on ST 90°-X Quartz reveal a dramatic reduction in power consumption. The phononic sensor is realized by artificially structuring the delay path to form an acoustic meta-material comprised of a periodic microcavity array incorporating high-density materials such as tantalum or tungsten. Constructive interference of the scattered and secondary reflected waves at every microcavity interface leads to acoustic energy confinement in the high-density regions translating into reduced power loss. Tantalum filled cavities show the best performance while tungsten inclusions create a phononic bandgap. Based on our simulation results, SAW devices with tantalum filled microcavities were fabricated and shown to significantly decrease insertion loss. Our findings offer encouraging prospects for designing low power, highly sensitive portable biosensors.

Advanced development of double-injection, deep-impurity semiconductor switches

NASA Technical Reports Server (NTRS)

Hanes, M. H.

1987-01-01

Deep-impurity, double-injection devices, commonly refered to as (DI) squared devices, represent a class of semiconductor switches possessing a very high degree of tolerance to electron and neutron irradiation and to elevated temperature operation. These properties have caused them to be considered as attractive candidates for space power applications. The design, fabrication, and testing of several varieties of (DI) squared devices intended for power switching are described. All of these designs were based upon gold-doped silicon material. Test results, along with results of computer simulations of device operation, other calculations based upon the assumed mode of operation of (DI) squared devices, and empirical information regarding power semiconductor device operation and limitations, have led to the conculsion that these devices are not well suited to high-power applications. When operated in power circuitry configurations, they exhibit high-power losses in both the off-state and on-state modes. These losses are caused by phenomena inherent to the physics and material of the devices and cannot be much reduced by device design optimizations. The (DI) squared technology may, however, find application in low-power functions such as sensing, logic, and memory, when tolerance to radiation and temperature are desirable (especially is device performance is improved by incorporation of deep-level impurities other than gold.

Soft x ray window encapsulant for HgI2 detectors

NASA Technical Reports Server (NTRS)

Entine, G.; Shah, K.; Squillante, M.

1987-01-01

HgI2 is an excellent semiconductor material for a low energy, room temperature x-ray spectrometer. The high values of the atomic numbers for its constituent elements gives high x-ray and gamma ray stopping power. The band gap of HgI2 is significantly higher than other commonly used semiconductors. Owing to the large value band gap, the leakage current for HgI2 devices is smaller, thus allowing low noise performance. Devices fabricated from HgI2 crystals have demonstrated energy resolution sufficient to distinguish the x-ray emission from the neighboring elements on the periodic table. Also the power requirements of HgI2 are very low. These characteristics make a HgI2 spectrometer an ideal component in a satellite based detection system. Unfortunately, HgI2 crystals tend to deteriorate with time, even if protected by standard semiconductor encapsulants. This degradation ruins the performance of the device in terms of its energy resolution and pulse amplitude. The degrading mechanism is believed to be material loss occurring from below the electrodes, due to high vapor pressure of HgI2 at room temperature. To address this major obstacle to rapid expansion of HgI2 technology, a research program aimed at improving device stability by encapsulation with inert polymeric materials was carried out. The program focused specifically on optimizing the encapsulant materials and their deposition techniques. The principal objectives for this program were device encapsulation, device testing, and accelerated testing to ensure very long term stability of these high resolution sensors. A variety of encapsulants were investigated with the selection criteria based on their chemical diffusion barrier properties, mechanical stability, reactivity, and morphology of encapsulant films. The investigation covered different classes of encapsulants including solvent based encapsulants, vapor deposited encapsulants, and plasma polymerized encapsulants. A variety of characterization techniques were employed to examine their effectiveness in stabilizing HgI2 devices; these included permeability evaluation, vacuum and heat testing, scanning electron microscopy (SEM) as well as studying the detector performance of coated detectors. The plasma polymerized films appear to have entirely solved the HgI2 degradation problem. Another achievement of this program was the development of an accelerated testing technique which correlates extremely well with long term tesing.

Electrodeposition of nickel sulfide on graphene-covered make-up cotton as a flexible electrode material for high-performance supercapacitors

NASA Astrophysics Data System (ADS)

Li, Yiju; Ye, Ke; Cheng, Kui; Yin, Jinling; Cao, Dianxue; Wang, Guiling

2015-01-01

In this report, graphene nanosheets (GNS)/nickel sulfide (NiS) based material for high-performance supercapacitor is prepared by "dip and dry" and electrodeposition methods. Commercial flexible make-up cottons (MCs) are chose as skeletons to construct homogeneous three-dimensional (3D) interconnected graphene-wrapped macro-networks, which can support structures for high loading of active electrode materials and facilitate the access of electrolytes to active electrode materials. The hybrid GNS/NiS based MCs (denoted as MCs@GNS@NiS) electrode yields relatively high specific capacitance of 775 F g-1 at a charge/discharge specific current of 0.5 A g-1 and good capacitance retention of 88.1% after 1000 cycles at 2 A g-1. Furthermore, the MCs@GNS@NiS electrode delivers a high energy density of 11.2 Wh kg-1 at even a high power density of 1008 W kg-1. Therefore, such low-cost and high-performance energy MCs based on GNS/NiS hierarchical nanostructures offer great promise in large-scale energy storage device applications.

Organic field-effect transistors: a combined study on short-channel effects and the influence of substrate pre-treatment on ambient stability

NASA Astrophysics Data System (ADS)

Klug, A.; Meingast, A.; Wurzinger, G.; Blümel, A.; Schmoltner, K.; Scherf, U.; List, E. J. W.

2011-10-01

For high-performance low-cost applications based on organic field-effect transistors (OFETs) and corresponding sensors essential properties of the applied semiconducting materials include solution-processability, high field-effect mobility, compatibility with adjacent layers and stability with respect to ambient conditions. In this combined study regioregular poly(3-hexylthiophene)- and pentacene-based bottom-gate bottom-contact OFETs with various channel lengths are thoroughly investigated with respect to short-channel effects and the implications of dielectric surface modification with hexamethyldisilazane (HMDS) on device performance. In addition, the influences of oxygen, moisture and HMDStreatment on the ambient stability of the devices are evaluated in detail. While OFETs without surface modification exhibited the expected degradation behavior upon air exposure mainly due to oxygen/moisture-induced doping or charge-carrier trapping, the stability of the investigated semiconductors was found to be distinctly increased when the substrate surface was hydrophobized. The presented results thoroughly summarize important issues which have to be considered when selecting semiconducting materials for high-performance OFETs and OFET-based sensors.

Highly efficient quantum dot-based photoconductive THz materials and devices

NASA Astrophysics Data System (ADS)

Rafailov, E. U.; Leyman, R.; Carnegie, D.; Bazieva, N.

2013-09-01

We demonstrate Terahertz (THz) signal sources based on photoconductive (PC) antenna devices comprising active layers of InAs semiconductor quantum dots (QDs) on GaAs. Antenna structures comprised of multiple active layers of InAs:GaAs PC materials are optically pumped using ultrashort pulses generated by a Ti:Sapphire laser and CW dualwavelength laser diodes. We also characterised THz output signals using a two-antenna coherent detection system. We discuss preliminary performance data from such InAs:GaAs THz devices which exhibit efficient emission of both pulsed and continuous wave (CW) THz signals and significant optical-to-THz conversion at both absorption wavelength ranges, <=850 nm and <=1300 nm.

Soft bioelectronics using nanomaterials

NASA Astrophysics Data System (ADS)

Lee, Hyunjae; Kim, Dae-Hyeong

2016-09-01

Recently, soft bioelectronics has attracted significant attention because of its potential applications in biointegrated healthcare devices and minimally invasive surgical tools. Mechanical mismatch between conventional electronic/optoelectronic devices and soft human tissues/organs, however, causes many challenges in materials and device designs of bio-integrated devices. Intrinsically soft hybrid materials comprising twodimensional nanomaterials are utilized to solve these issues. In this paper, we describe soft bioelectronic devices based on graphene synthesized by a chemical vapor deposition process. These devices have unique advantages over rigid electronics, particularly in biomedical applications. The functionalized graphene is hybridized with other nanomaterials and fabricated into high-performance sensors and actuators toward wearable and minimally invasive healthcare devices. Integrated bioelectronic systems constructed using these devices solve pending issues in clinical medicine while providing new opportunities in personalized healthcare.

High mobility high efficiency organic films based on pure organic materials

DOEpatents

Salzman, Rhonda F [Ann Arbor, MI; Forrest, Stephen R [Ann Arbor, MI

2009-01-27

A method of purifying small molecule organic material, performed as a series of operations beginning with a first sample of the organic small molecule material. The first step is to purify the organic small molecule material by thermal gradient sublimation. The second step is to test the purity of at least one sample from the purified organic small molecule material by spectroscopy. The third step is to repeat the first through third steps on the purified small molecule material if the spectroscopic testing reveals any peaks exceeding a threshold percentage of a magnitude of a characteristic peak of a target organic small molecule. The steps are performed at least twice. The threshold percentage is at most 10%. Preferably the threshold percentage is 5% and more preferably 2%. The threshold percentage may be selected based on the spectra of past samples that achieved target performance characteristics in finished devices.

Recent progress in hollow sphere-based electrodes for high-performance supercapacitors

NASA Astrophysics Data System (ADS)

Zhao, Yan; Chen, Min; Wu, Limin

2016-08-01

Hollow spheres have drawn much attention in the area of energy storage and conversion, especially in high-performance supercapacitors owing to their well-defined morphologies, uniform size, low density and large surface area. And quite some significant breakthroughs have been made in advanced supercapacitor electrode materials with hollow sphere structures. In this review, we summarize and discuss the synthesis and application of hollow spheres with controllable structure and morphology as electrode materials for supercapacitors. First, we briefly introduce the fabrication strategies of hollow spheres for electrode materials. Then, we discuss in detail the recent advances in various hollow sphere-based electrode materials for supercapacitors, including single-shelled, yolk-shelled, urchin-like, double-shelled, multi-shelled, and mesoporous hollow structure-based symmetric and asymmetric supercapacitor devices. We conclude this review with some perspectives on the future research and development of the hollow sphere-based electrode materials.

Recent progress in hollow sphere-based electrodes for high-performance supercapacitors.

PubMed

Zhao, Yan; Chen, Min; Wu, Limin

2016-08-26

Hollow spheres have drawn much attention in the area of energy storage and conversion, especially in high-performance supercapacitors owing to their well-defined morphologies, uniform size, low density and large surface area. And quite some significant breakthroughs have been made in advanced supercapacitor electrode materials with hollow sphere structures. In this review, we summarize and discuss the synthesis and application of hollow spheres with controllable structure and morphology as electrode materials for supercapacitors. First, we briefly introduce the fabrication strategies of hollow spheres for electrode materials. Then, we discuss in detail the recent advances in various hollow sphere-based electrode materials for supercapacitors, including single-shelled, yolk-shelled, urchin-like, double-shelled, multi-shelled, and mesoporous hollow structure-based symmetric and asymmetric supercapacitor devices. We conclude this review with some perspectives on the future research and development of the hollow sphere-based electrode materials.

Recent Advances in Metal Chalcogenides (MX; X = S, Se) Nanostructures for Electrochemical Supercapacitor Applications: A Brief Review

PubMed Central

Theerthagiri, Jayaraman; Durai, Govindarajan; Rana, Abu ul Hassan Sarwar; Sangeetha, Kirubanandam; Kuppusami, Parasuraman; Kim, Hyun-Seok

2018-01-01

Supercapacitors (SCs) have received a great deal of attention and play an important role for future self-powered devices, mainly owing to their higher power density. Among all types of electrical energy storage devices, electrochemical supercapacitors are considered to be the most promising because of their superior performance characteristics, including short charging time, high power density, safety, easy fabrication procedures, and long operational life. An SC consists of two foremost components, namely electrode materials, and electrolyte. The selection of appropriate electrode materials with rational nanostructured designs has resulted in improved electrochemical properties for high performance and has reduced the cost of SCs. In this review, we mainly spotlight the non-metallic oxide, especially metal chalcogenides (MX; X = S, Se) based nanostructured electrode materials for electrochemical SCs. Different non-metallic oxide materials are highlighted in various categories, such as transition metal sulfides and selenides materials. Finally, the designing strategy and future improvements on metal chalcogenide materials for the application of electrochemical SCs are also discussed. PMID:29671823

Multifunctional organic thin films and their electronic/optical properties

NASA Astrophysics Data System (ADS)

Shao, Yan

The concept of multifunctional organic thin films and their electronic/optical properties has been applied to organic functional device design, fabrication, and characterization. The organic devices involve organic light-emitting diodes (OLEDs) and organic photovoltaic devices (OPV) in this dissertation. In the research of graded junction structure of OLEDs, two kinds of naturally-formed graded junction (NFGJ) structures, sharp and shallow graded junctions, can be formed using single thermal evaporation boat loaded with uniformly mixed charge transport and light-emitting materials. OLEDs with NFGJ have been demonstrated in Chapter 3; the performance is comparable to the heterojunction OLEDs, but with better device lifetime. A novel method to prepare highly uniform mixed organic solid solutions through a high temperature and high-pressure fusion process has been demonstrated in Chapter 4. A series of fused organic solid solution (FOSS) compounds with NPD doped with different organic emitting dopants were prepared and DSC technique was utilized to determine the thermal characteristics. For the first time, the schematic phase diagram for this binary system has been obtained. High performance OLEDs of single color and white emission were fabricated and the device properties were characterized. In Chapter 5, an efficient photovoltaic heterojunction of tetracene and fullerene has been investigated and high performance organic solar cells have been demonstrated by thermal deposition and successive heat treatment. The preliminary conclusion for this enhancement is discussed and supported by atomic force microscopy images, absorption spectra and x-ray diffraction analysis. Additionally, an effective organic photovoltaic heterojunction based on the typical triplet material PtOEP was demonstrated. It is believed that introducing appropriate organic materials with long exciton lifetime is a very promising way to improve photovoltaic performance.

Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits

NASA Astrophysics Data System (ADS)

Gundlach, D. J.; Royer, J. E.; Park, S. K.; Subramanian, S.; Jurchescu, O. D.; Hamadani, B. H.; Moad, A. J.; Kline, R. J.; Teague, L. C.; Kirillov, O.; Richter, C. A.; Kushmerick, J. G.; Richter, L. J.; Parkin, S. R.; Jackson, T. N.; Anthony, J. E.

2008-03-01

The use of organic materials presents a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. Commercialization of this technology requires reduction in manufacturing costs by exploiting inexpensive low-temperature deposition and patterning techniques, which typically lead to lower device performance. We report a low-cost approach to control the microstructure of solution-cast acene-based organic thin films through modification of interfacial chemistry. Chemically and selectively tailoring the source/drain contact interface is a novel route to initiating the crystallization of soluble organic semiconductors, leading to the growth on opposing contacts of crystalline films that extend into the transistor channel. This selective crystallization enables us to fabricate high-performance organic thin-film transistors and circuits, and to deterministically study the influence of the microstructure on the device characteristics. By connecting device fabrication to molecular design, we demonstrate that rapid film processing under ambient room conditions and high performance are not mutually exclusive.

Device Engineering Towards Improved Tin Sulfide Solar Cell Performance and Performance Reproducibility

DOE Office of Scientific and Technical Information (OSTI.GOV)

Steinmann, Vera; Chakraborty, Rupak; Rekemeyer, Paul

2016-11-21

As novel absorber materials are developed and screened for their photovoltaic (PV) properties, the challenge remains to rapidly test promising candidates in high-performing PV devices. There is a need to engineer new compatible device architectures, including the development of novel transparent conductive oxides and buffer layers. Here, we consider the two approaches of a substrate-style and a superstrate-style device architecture for novel thin-film solar cells. We use tin sulfide as a test absorber material. Upon device engineering, we demonstrate new approaches to improve device performance and performance reproducibility.

Unconventional supercapacitors from nanocarbon-based electrode materials to device configurations.

PubMed

Liu, Lili; Niu, Zhiqiang; Chen, Jun

2016-07-25

As energy storage devices, supercapacitors that are also called electrochemical capacitors possess high power density, excellent reversibility and long cycle life. The recent boom in electronic devices with different functions in transparent LED displays, stretchable electronic systems and artificial skin has increased the demand for supercapacitors to move towards light, thin, integrated macro- and micro-devices with transparent, flexible, stretchable, compressible and/or wearable abilities. The successful fabrication of such supercapacitors depends mainly on the preparation of innovative electrode materials and the design of unconventional supercapacitor configurations. Tremendous research efforts have been recently made to design and construct innovative nanocarbon-based electrode materials and supercapacitors with unconventional configurations. We review here recent developments in supercapacitors from nanocarbon-based electrode materials to device configurations. The advances in nanocarbon-based electrode materials mainly include the assembly technologies of macroscopic nanostructured electrodes with different dimensions of carbon nanotubes/nanofibers, graphene, mesoporous carbon, activated carbon, and their composites. The electrodes with macroscopic nanostructured carbon-based materials overcome the issues of low conductivity, poor mechanical properties, and limited dimensions that are faced by conventional methods. The configurational design of advanced supercapacitor devices is presented with six types of unconventional supercapacitor devices: flexible, micro-, stretchable, compressible, transparent and fiber supercapacitors. Such supercapacitors display unique configurations and excellent electrochemical performance at different states such as bending, stretching, compressing and/or folding. For example, all-solid-state simplified supercapacitors that are based on nanostructured graphene composite paper are able to maintain 95% of the original capacity at a 180° folding state. The progress made so far will guide further developments in the structural design of nanocarbon-based electrode materials and the configurational diversity of supercapacitor devices. Future developments and prospects in the controllable assembly of macroscopic nanostructured electrodes and the innovation of unconventional supercapacitor configurations are also discussed. This should shed light on the R&D of supercapacitors.

1-dimension nano-material-based flexible device

NASA Astrophysics Data System (ADS)

Yang, Xing; Zhou, Zhaoying; Zheng, Fuzhong

2009-11-01

1D nano-material-based flexible devices has attracted considerable attention owing to the growing need of the high-sensitivity flexible sensor, portable consumer electronics etc.. In this paper, the 1D nano-materials-based flexible device on polyimide substrate was proposed. The bottom-up and top-down combined process were used for constructing the ZnO nanowire and the CNT-based flexible devices. Their electrical characteristics were also investigated. The measurement results demonstrate that the flexible device covered with a layer of Al2O3 has good ohm electrical contact behavior between the nano-material and micro-electrodes. The proposed 1D nano-material-based flexible device shows the application potential in the sensing fields.

Silicon nanowires for photovoltaic solar energy conversion.

PubMed

Peng, Kui-Qing; Lee, Shuit-Tong

2011-01-11

Semiconductor nanowires are attracting intense interest as a promising material for solar energy conversion for the new-generation photovoltaic (PV) technology. In particular, silicon nanowires (SiNWs) are under active investigation for PV applications because they offer novel approaches for solar-to-electric energy conversion leading to high-efficiency devices via simple manufacturing. This article reviews the recent developments in the utilization of SiNWs for PV applications, the relationship between SiNW-based PV device structure and performance, and the challenges to obtaining high-performance cost-effective solar cells.

Functionalized graphene and other two-dimensional materials for photovoltaic devices: device design and processing.

PubMed

Liu, Zhike; Lau, Shu Ping; Yan, Feng

2015-08-07

Graphene is the thinnest two-dimensional (2D) carbon material and has many advantages including high carrier mobilities and conductivity, high optical transparency, excellent mechanical flexibility and chemical stability, which make graphene an ideal material for various optoelectronic devices. The major applications of graphene in photovoltaic devices are for transparent electrodes and charge transport layers. Several other 2D materials have also shown advantages in charge transport and light absorption over traditional semiconductor materials used in photovoltaic devices. Great achievements in the applications of 2D materials in photovoltaic devices have been reported, yet numerous challenges still remain. For practical applications, the device performance should be further improved by optimizing the 2D material synthesis, film transfer, surface functionalization and chemical/physical doping processes. In this review, we will focus on the recent advances in the applications of graphene and other 2D materials in various photovoltaic devices, including organic solar cells, Schottky junction solar cells, dye-sensitized solar cells, quantum dot-sensitized solar cells, other inorganic solar cells, and perovskite solar cells, in terms of the functionalization techniques of the materials, the device design and the device performance. Finally, conclusions and an outlook for the future development of this field will be addressed.

Ternary solution-processed organic solar cells incorporating 2D materials

NASA Astrophysics Data System (ADS)

Stylianakis, Minas M.; Konios, Dimitrios; Petridis, Constantinos; Kakavelakis, George; Stratakis, Emmanuel; Kymakis, Emmanuel

2017-12-01

Recently, the study of ternary organic solar cells (OSCs) has attracted the efforts of the scientific community, leading to significantly higher performance due to the enhanced harvesting of incoming irradiation. Here, for the first time, and in order to promote this OSC architecture, we review the progress implemented by the application of two-dimensional (2D) materials in the field of blend bulk heterojunction ternary OSCs. Power conversion efficiency (PCE) improvements of the order of 40% compared to the reference binary devices, and PCEs in excess of 8% have been reported by incorporating graphene-based or other 2D materials as a third element inside the active layer. These OSCs combine the synergetic advantages of ternary devices and the superb properties of the 2D material family. In conclusion, the incorporation of the unique properties of graphene and other 2D materials inside the active layer opens up a very promising pathway in the design and construction of high-performance, simply fabricated and low- cost photovoltaic devices.

Li4 Ti5 O12 Anode: Structural Design from Material to Electrode and the Construction of Energy Storage Devices.

PubMed

Chen, Zhijie; Li, Honsen; Wu, Langyuan; Lu, Xiaoxia; Zhang, Xiaogang

2018-03-01

Spinel Li 4 Ti 5 O 12 , known as a zero-strain material, is capable to be a competent anode material for promising applications in state-of-art electrochemical energy storage devices (EESDs). Compared with commercial graphite, spinel Li 4 Ti 5 O 12 offers a high operating potential of ∼1.55 V vs Li/Li + , negligible volume expansion during Li + intercalation process and excellent thermal stability, leading to high safety and favorable cyclability. Despite the merits of Li 4 Ti 5 O 12 been presented, there still remains the issue of Li 4 Ti 5 O 12 suffering from poor electronic conductivity, manifesting disadvantageous rate performance. Typically, a material modification process of Li 4 Ti 5 O 12 will be proposed to overcome such an issue. However, the previous reports have made few investigations and achievements to analyze the subsequent processes after a material modification process. In this review, we attempt to put considerable interest in complete device design and assembly process with its material structure design (or modification process), electrode structure design and device construction design. Moreover, we have systematically concluded a series of representative design schemes, which can be divided into three major categories involving: (1) nanostructures design, conductive material coating process and doping process on material level; (2) self-supporting or flexible electrode structure design on electrode level; (3) rational assembling of lithium ion full cell or lithium ion capacitor on device level. We believe that these rational designs can give an advanced performance for Li 4 Ti 5 O 12 -based energy storage device and deliver a deep inspiration. © 2018 The Chemical Society of Japan & Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Self-Powered, Flexible, and Solution-Processable Perovskite Photodetector Based on Low-Cost Carbon Cloth.

PubMed

Sun, Haoxuan; Lei, Tianyu; Tian, Wei; Cao, Fengren; Xiong, Jie; Li, Liang

2017-07-01

Flexible perovskite photodetectors are usually constructed on indium-tin-oxide-coated polymer substrates, which are expensive, fragile, and not resistant to high temperature. Herein, for the first time, a high-performance flexible perovskite photodetector is fabricated based on low-cost carbon cloth via a facile solution processable strategy. In this device, perovskite microcrystal and Spiro-OMeTAD (hole transporting material) blended film act as active materials for light detection, and carbon cloth serves as both a flexible substrate and a conductive electrode. The as-fabricated photodetector shows a broad spectrum response from ultraviolet to near-infrared light, high responsivity, fast response speed, long-term stability, and self-powered capability. Flexible devices show negligible degradation after several tens of bending cycles and at the extremely bending angle of 180°. This work promises a new technique to construct flexible, high-performance photodetectors with low cost and self-powered capability. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Strong electrically tunable MoTe2/graphene van der Waals heterostructures for high-performance electronic and optoelectronic devices

NASA Astrophysics Data System (ADS)

Wang, Feng; Yin, Lei; Wang, Zhenxing; Xu, Kai; Wang, Fengmei; Shifa, Tofik Ahmed; Huang, Yun; Wen, Yao; Jiang, Chao; He, Jun

2016-11-01

MoTe2 is an emerging two-dimensional layered material showing ambipolar/p-type conductivity, which makes it an important supplement to n-type two-dimensional layered material like MoS2. However, the properties based on its van der Waals heterostructures have been rarely studied. Here, taking advantage of the strong Fermi level tunability of monolayer graphene (G) and the feature of van der Waals interfaces that is free from Fermi level pinning effect, we fabricate G/MoTe2/G van der Waals heterostructures and systematically study the electronic and optoelectronic properties. We demonstrate the G/MoTe2/G FETs with low Schottky barriers for both holes (55.09 meV) and electrons (122.37 meV). Moreover, the G/MoTe2/G phototransistors show high photoresponse performances with on/off ratio, responsivity, and detectivity of ˜105, 87 A/W, and 1012 Jones, respectively. Finally, we find the response time of the phototransistors is effectively tunable and a mechanism therein is proposed to explain our observation. This work provides an alternative choice of contact for high-performance devices based on p-type and ambipolar two-dimensional layered materials.

In-plane Schottky-barrier field-effect transistors based on 1T/2H heterojunctions of transition-metal dichalcogenides

NASA Astrophysics Data System (ADS)

Fan, Zhi-Qiang; Jiang, Xiang-Wei; Luo, Jun-Wei; Jiao, Li-Ying; Huang, Ru; Li, Shu-Shen; Wang, Lin-Wang

2017-10-01

As Moore's law approaches its end, two-dimensional (2D) materials are intensely studied for their potentials as one of the "More than Moore' (MM) devices. However, the ultimate performance limits and the optimal design parameters for such devices are still unknown. One common problem for the 2D-material-based device is the relative weak on-current. In this study, two-dimensional Schottky-barrier field-effect transistors (SBFETs) consisting of in-plane heterojunctions of 1T metallic-phase and 2H semiconducting-phase transition-metal dichalcogenides (TMDs) are studied following the recent experimental synthesis of such devices at a much larger scale. Our ab initio simulation reveals the ultimate performance limits of such devices and offers suggestions for better TMD materials. Our study shows that the Schottky-barrier heights (SBHs) of the in-plane 1T/2H contacts are smaller than the SBHs of out-of-plane contacts, and the contact coupling is also stronger in the in-plane contact. Due to the atomic thickness of the monolayer TMD, the average subthreshold swing of the in-plane TMD-SBFETs is found to be close to the limit of 60 mV/dec, and smaller than that of the out-of-plane TMD-SBFET device. Different TMDs are considered and it is found that the in-plane WT e2-SBFET provides the best performance and can satisfy the performance requirement of the sub-10-nm high-performance transistor outlined by the International Technology Roadmap for Semiconductors, and thus could be developed into a viable sub-10-nm MM device in the future.

Improved interface control for high-performance graphene-based organic solar cells

NASA Astrophysics Data System (ADS)

Jung, Seungon; Lee, Junghyun; Choi, Yunseong; Myeon Lee, Sang; Yang, Changduk; Park, Hyesung

2017-12-01

The demand for high-efficiency flexible optoelectronic devices is ever-increasing because next-generation electronic devices that comprise portable or wearable electronic systems are set to play an important role. Graphene has received extensive attention as it is considered to be a promising candidate material for transparent flexible electrode platforms owing to its outstanding electrical, optical, and physical properties. Despite these properties, the inert and hydrophobic nature of graphene surfaces renders it difficult to use in optoelectronic devices. In particular, commonly used charge transporting layer (CTL) materials for organic solar cells (OSCs) cannot uniformly coat a graphene surface, which leads to such devices failing. Herein, this paper proposes an approach that will enable CTL materials to completely cover a graphene electrode; this is done with the assistance of commonly accessible polar solvents. These are successfully applied to various configurations of OSCs, with power conversion efficiencies of 8.17% for graphene electrode-based c-OSCs (OSCs with conventional structures), 8.38% for i-OSCs (OSCs with inverted structures), and 7.53% for flexible solar cells. The proposed approach is expected to bring about significant advances for efficiency enhancements in graphene-based optoelectronic devices, and it is expected that it will open up new possibilities for flexible optoelectronic systems.

White perovskite based lighting devices.

PubMed

Bidikoudi, M; Fresta, E; Costa, R D

2018-06-28

Hybrid organic-inorganic and all-inorganic metal halide perovskites have been one of the most intensively studied materials during the last few years. In particular, research focusing on understanding how to tune the photoluminescence features and to apply perovskites to optoelectronic applications has led to a myriad of new materials featuring high photoluminescence quantum yields covering the whole visible range, as well as devices with remarkable performances. Having already established their successful incorporation in highly efficient solar cells, the next step is to tackle the challenges in solid-state lighting (SSL) devices. Here, the most prominent is the preparation of white-emitting devices. Herein, we have provided a comprehensive view of the route towards perovskite white lighting devices, including thin film light-emitting diodes (PeLEDs) and hybrid LEDs (HLEDs), using perovskite based color down-converting coatings. While synthesis and photoluminescence features are briefly discussed, we focus on highlighting the major achievements and limitations in white devices. Overall, we expect that this review will provide the reader a general overview of the current state of perovskite white SSL, paving the way towards new breakthroughs in the near future.

Inkjet-printing of non-volatile organic resistive devices and crossbar array structures

NASA Astrophysics Data System (ADS)

Sax, Stefan; Nau, Sebastian; Popovic, Karl; Bluemel, Alexander; Klug, Andreas; List-Kratochvil, Emil J. W.

2015-09-01

Due to the increasing demand for storage capacity in various electronic gadgets like mobile phones or tablets, new types of non-volatile memory devices have gained a lot of attention over the last few years. Especially multilevel conductance switching elements based on organic semiconductors are of great interest due to their relatively simple device architecture and their small feature size. Since organic semiconductors combine the electronic properties of inorganic materials with the mechanical characteristics of polymers, this class of materials is suitable for solution based large area device preparation techniques. Consequently, inkjet based deposition techniques are highly capable of facing preparation related challenges. By gradually replacing the evaporated electrodes with inkjet printed silver, the preparation related influence onto device performance parameters such as the ON/OFF ratio was investigated with IV measurements and high resolution transmission electron microscopy. Due to the electrode surface roughness the solvent load during the printing of the top electrode as well as organic layer inhomogeneity's the utilization in array applications is hampered. As a prototypical example a 1diode-1resistor element and a 2×2 subarray from 5×5 array matrix were fully characterized demonstrating the versatility of inkjet printing for device preparation.

Progress in the development and integration of fluid flow control tools in paper microfluidics.

PubMed

Fu, Elain; Downs, Corey

2017-02-14

Paper microfluidics is a rapidly growing subfield of microfluidics in which paper-like porous materials are used to create analytical devices. There is a need for higher performance field-use tests for many application domains including human disease diagnosis, environmental monitoring, and veterinary medicine. A key factor in creating high performance paper-based devices is the ability to manipulate fluid flow within the devices. This critical review is focused on the progress that has been made in (i) the development of fluid flow control tools and (ii) the integration of those tools into paper microfluidic devices. Further, we strive to be comprehensive in our presentation and provide historical context through discussion and performance comparisons, when possible, of both relevant earlier work and recent work. Finally, we discuss the major areas of focus for fluid flow methods development to advance the potential of paper microfluidics for high-performance field applications.

Quantitative description on structure-property relationships of Li-ion battery materials for high-throughput computations

NASA Astrophysics Data System (ADS)

Wang, Youwei; Zhang, Wenqing; Chen, Lidong; Shi, Siqi; Liu, Jianjun

2017-12-01

Li-ion batteries are a key technology for addressing the global challenge of clean renewable energy and environment pollution. Their contemporary applications, for portable electronic devices, electric vehicles, and large-scale power grids, stimulate the development of high-performance battery materials with high energy density, high power, good safety, and long lifetime. High-throughput calculations provide a practical strategy to discover new battery materials and optimize currently known material performances. Most cathode materials screened by the previous high-throughput calculations cannot meet the requirement of practical applications because only capacity, voltage and volume change of bulk were considered. It is important to include more structure-property relationships, such as point defects, surface and interface, doping and metal-mixture and nanosize effects, in high-throughput calculations. In this review, we established quantitative description of structure-property relationships in Li-ion battery materials by the intrinsic bulk parameters, which can be applied in future high-throughput calculations to screen Li-ion battery materials. Based on these parameterized structure-property relationships, a possible high-throughput computational screening flow path is proposed to obtain high-performance battery materials.

Quantitative description on structure-property relationships of Li-ion battery materials for high-throughput computations.

PubMed

Wang, Youwei; Zhang, Wenqing; Chen, Lidong; Shi, Siqi; Liu, Jianjun

2017-01-01

Li-ion batteries are a key technology for addressing the global challenge of clean renewable energy and environment pollution. Their contemporary applications, for portable electronic devices, electric vehicles, and large-scale power grids, stimulate the development of high-performance battery materials with high energy density, high power, good safety, and long lifetime. High-throughput calculations provide a practical strategy to discover new battery materials and optimize currently known material performances. Most cathode materials screened by the previous high-throughput calculations cannot meet the requirement of practical applications because only capacity, voltage and volume change of bulk were considered. It is important to include more structure-property relationships, such as point defects, surface and interface, doping and metal-mixture and nanosize effects, in high-throughput calculations. In this review, we established quantitative description of structure-property relationships in Li-ion battery materials by the intrinsic bulk parameters, which can be applied in future high-throughput calculations to screen Li-ion battery materials. Based on these parameterized structure-property relationships, a possible high-throughput computational screening flow path is proposed to obtain high-performance battery materials.

Diamond-Based Supercapacitors: Realization and Properties.

PubMed

Gao, Fang; Nebel, Christoph E

2016-10-26

In this Spotlight on Applications, we describe our recent progress on the fabrication of surface-enlarged boron-doped polycrystalline diamond electrodes, and evaluate their performance in supercapacitor applications. We begin with a discussion of the fabrication methods of porous diamond materials. The diamond surface enlargement starts with a top-down plasma etching method. Although the extra surface area provided by surface roughening or nanostructuring provides good outcome for sensing applications, a capacitance value <1 mF cm -2 or a surface-enlargement factor <100 fail to meet the requirement of a practical supercapacitor. Driven by the need for large surface areas, we recently focused on the tempated-growth method. We worked on both supported and free-standing porous diamond materials to enhance the areal capacitance to the "mF cm -2 " range. With our newly developed free-standing diamond paper, areal capacitance can be multiplied by stacking multilayers of the electrode material. Finally, considering the fact that there is no real diamond-based supercapacitor device up to now, we fabricated the first prototype pouch-cell device based on the free-standing diamond paper to evaluate its performance. The results reveal that the diamond paper is suitable for operation in high potential windows (up to 2.5 V) in aqueous electrolyte with a capacitance of 0.688 mF cm -2 per layer of paper (or 0.645 F g -1 ). Impedance spectroscopy revealed that the operation frequency of the device exceeds 30 Hz. Because of the large potential window and the ability to work at high frequency, the specific power of the device reached 1 × 10 5 W kg -1 . In the end, we made estimations on the future target performance of diamond supercapacitors based on the existing information.

An Efficient Amphiphilic-Type Triphenylamine-Based Organic Hole Transport Material for High-Performance and Ambient-Stable Dopant-Free Perovskite and Organic Solar Cells.

PubMed

Reddy, Saripally Sudhaker; Park, Ho-Yeol; Kwon, Haeun; Shin, Jongmoon; Kim, Chang-Su; Song, Myungkwan; Jin, Sung-Ho

2018-04-25

A new set of simply structured triphenylamine-based small molecules are synthesized and evaluated as dopant-free hole transporting materials (HTMs) for high-performance perovskite solar cells (PSCs) and bulk heterojunction inverted organic solar cells (BHJ IOSCs). Surprisingly, the new amphiphilic-type HTM-1 (with internal hydrophilic groups and peripheral hydrophobic alkyl tails) showed better compatibility and performance than the actual target molecule, that is, HTM-2 in PSCs and BHJ IOSCs. Importantly, the HTM-1-based dopant-free PSCs and BHJ IOSCs exhibited high power conversion efficiencies (PCEs) of 11.45 % and 8.34 %, respectively. These performances are superior and comparable to those of standard HTMs Spiro-OMeTAD (2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene) and PEDOT:PSS (poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate) in PSCs and BHJ IOSCs, respectively. The enhanced device performance of the HTM-1-based PSCs is ascribed to its strong affinity towards the perovskite, properly aligned energy levels with respect to the perovskite valence band, and excellent hole transporting behavior. In addition, the well-organized energy levels of the HTMs showed excellent compatibility in BHJ IOSCs. The new amphiphilic-type HTM-based photovoltaic devices also showed long-term air stability over 700 h. These promising results offer new and unexpected prospects for engineering the interface between the photoactive material and HTMs in PSCs and BHJ IOSCs. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigation of Processing, Microstructures and Efficiencies of Polycrystalline CdTe Photovoltaic Films and Devices

NASA Astrophysics Data System (ADS)

Munshi, Amit Harenkumar

CdTe based photovoltaics have been commercialized at multiple GWs/year level. The performance of CdTe thin film photovoltaic devices is sensitive to process conditions. Variations in deposition temperatures as well as other treatment parameters have a significant impact on film microstructure and device performance. In this work, extensive investigations are carried out using advanced microstructural characterization techniques in an attempt to relate microstructural changes due to varying deposition parameters and their effects on device performance for cadmium telluride based photovoltaic cells deposited using close space sublimation (CSS). The goal of this investigation is to apply advanced material characterization techniques to aid process development for higher efficiency CdTe based photovoltaic devices. Several techniques have been used to observe the morphological changes to the microstructure along with materials and crystallographic changes as a function of deposition temperature and treatment times. Traditional device structures as well as advanced structures with electron reflector and films deposited on Mg1-xZnxO instead of conventional CdS window layer are investigated. These techniques include Scanning Electron Microscopy (SEM) with Electron Back Scattered Diffraction (EBSD) and Energy dispersive X-ray spectroscopy (EDS) to study grain structure and High Resolution Transmission Electron Microscopy (TEM) with electron diffraction and EDS. These investigations have provided insights into the mechanisms that lead to change in film structure and device performance with change in deposition conditions. Energy dispersive X-ray spectroscopy (EDS) is used for chemical mapping of the films as well as to understand interlayer material diffusion between subsequent layers. Electrical performance of these devices has been studied using current density vs voltage plots. Devices with efficiency over 18% have been fabricated on low cost commercial glass substrates with processes suitable for mass production. These are the highest efficiencies reported by any university or national laboratory for polycrystalline thin-film CdTe photovoltaics bettered only by researchers at First Solar Inc. Processing experiments are traditionally designed based on simulation results however in these study microscopic materials characterization has been used as the primary driving force to understand the effects of processing conditions. Every structure and efficiency reported in this study has been extensively studied using microscopic imaging and materials characterization and processing conditions accordingly altered to achieve higher efficiencies. Understanding CdCl2 passivation treatment out of this has been critical to this process. Several observations with regard to effect of CdCl 2 passivation have allowed the use to this treatment to achieve optimum performance. The effects of deposition temperature are also studied in rigorous details. All of these studies have played an important role in optimization of process that lead to high efficiency thin-film CdTe photovoltaic devices. An effort is made in this study to better understand and establish a 3-way relationship between processing conditions, film microstructure and device efficiency for sublimated thin-film CdTe photovoltaics. Some crucial findings include impact of grain size on efficiency of photovoltaic devices and improvement in fill-factor resulting from use of thicker CdTe absorber with larger grain size. An attempt is also made to understand the microstructure as the device efficiency improves from 1% efficiency to over 18% efficiency.

International survey on neuroradiological interventional and therapeutic devices and materials.

PubMed

van den Berg, René; Mayer, Thomas E

2015-12-01

A web-based survey was performed among the members of the World Federation of Interventional and Therapeutic Neuroradiology to determine the differences in availability, pricing, and performance of endovascular devices with special focus on coils, intra-arterial stroke devices, detachable balloons, and liquid embolic materials. The results of this survey show that the quality of the majority of interventional neuroradiology devices is good and compatibility issues are limited. Individual action towards suppliers is recommended to discuss the availability and pricing of devices and embolization materials. © The Author(s) 2015.

Ultrathin two-dimensional MnO2/graphene hybrid nanostructures for high-performance, flexible planar supercapacitors.

PubMed

Peng, Lele; Peng, Xu; Liu, Borui; Wu, Changzheng; Xie, Yi; Yu, Guihua

2013-05-08

Planar supercapacitors have recently attracted much attention owing to their unique and advantageous design for 2D nanomaterials based energy storage devices. However, improving the electrochemical performance of planar supercapacitors still remains a great challenge. Here we report for the first time a novel, high-performance in-plane supercapacitor based on hybrid nanostructures of quasi-2D ultrathin MnO2/graphene nanosheets. Specifically, the planar structures based on the δ-MnO2 nanosheets integrated on graphene sheets not only introduce more electrochemically active surfaces for absorption/desorption of electrolyte ions, but also bring additional interfaces at the hybridized interlayer areas to facilitate charge transport during charging/discharging processes. The unique structural design for planar supercapacitors enables great performance enhancements compared to graphene-only devices, exhibiting high specific capacitances of 267 F/g at current density of 0.2 A/g and 208 F/g at 10 A/g and excellent rate capability and cycling stability with capacitance retention of 92% after 7000 charge/discharge cycles. Moreover, the high planar malleability of planar supercapacitors makes possible superior flexibility and robust cyclability, yielding capacitance retention over 90% after 1000 times of folding/unfolding. Ultrathin 2D nanomaterials represent a promising material platform to realize highly flexible planar energy storage devices as the power back-ups for stretchable/flexible electronic devices.

Design of nanostructured-based glucose biosensors

NASA Astrophysics Data System (ADS)

Komirisetty, Archana; Williams, Frances; Pradhan, Aswini; Konda, Rajini B.; Dondapati, Hareesh; Samantaray, Diptirani

2012-04-01

This paper presents the design of glucose sensors that will be integrated with advanced nano-materials, bio-coatings and electronics to create novel devices that are highly sensitive, inexpensive, accurate, and reliable. In the work presented, a glucose biosensor and its fabrication process flow have been designed. The device is based on electrochemical sensing using a working electrode with bio-functionalized zinc oxide (ZnO) nano-rods. Among all metal oxide nanostructures, ZnO nano-materials play a significant role as a sensing element in biosensors due to their properties such as high isoelectric point (IEP), fast electron transfer, non-toxicity, biocompatibility, and chemical stability which are very crucial parameters to achieve high sensitivity. Amperometric enzyme electrodes based on glucose oxidase (GOx) are used due to their stability and high selectivity to glucose. The device also consists of silicon dioxide and titanium layers as well as platinum working and counter electrodes and a silver/silver chloride reference electrode. Currently, the biosensors are being fabricated using the process flow developed. Once completed, the sensors will be bio-functionalized and tested to characterize their performance, including their sensitivity and stability.

Precision Controlled Carbon Materials for Next-Generation Optoelectronic and Photonic Devices

DTIC Science & Technology

2018-01-08

absorbers. Semiconducting nanotubes are strong, dye-like absorbers with bandgaps tunable to the ideal for single-junction solar PV ~1.3 eV or deeper...semiconducting carbon nanotube-based photovoltaic solar cells and photodetectors; (2) high-performance carbon nanotube electronics; (3) stretchable...photovoltaic solar cells and photodetectors Semiconducting carbon nanotubes are attractive absorbers for photovoltaic and photodetector devices. The

Microwave Assisted Synthesis of Porous NiCo2O4 Microspheres: Application as High Performance Asymmetric and Symmetric Supercapacitors with Large Areal Capacitance

PubMed Central

Khalid, Syed; Cao, Chuanbao; Wang, Lin; Zhu, Youqi

2016-01-01

Large areal capacitance is essentially required to integrate the energy storage devices at the microscale electronic appliances. Energy storage devices based on metal oxides are mostly fabricated with low mass loading per unit area which demonstrated low areal capacitance. It is still a challenge to fabricate supercapacitor devices of porous metal oxides with large areal capacitance. Herein we report microwave method followed by a pyrolysis of the as-prepared precursor is used to synthesize porous nickel cobaltite microspheres. Porous NiCo2O4 microspheres are capable to deliver large areal capacitance due to their high specific surface area and small crystallite size. The facile strategy is successfully demonstrated to fabricate aqueous-based asymmetric & symmetric supercapacitor devices of porous NiCo2O4 microspheres with high mass loading of electroactive materials. The asymmetric & symmetric devices exhibit maximum areal capacitance and energy density of 380 mF cm−2 & 19.1 Wh Kg−1 and 194 mF cm−2 & 4.5 Wh Kg−1 (based on total mass loading of 6.25 & 6.0 mg) respectively at current density of 1 mA cm−2. The successful fabrication of symmetric device also indicates that NiCo2O4 can also be used as the negative electrode material for futuristic asymmetric devices. PMID:26936283

Microwave Assisted Synthesis of Porous NiCo2O4 Microspheres: Application as High Performance Asymmetric and Symmetric Supercapacitors with Large Areal Capacitance

NASA Astrophysics Data System (ADS)

Khalid, Syed; Cao, Chuanbao; Wang, Lin; Zhu, Youqi

2016-03-01

Large areal capacitance is essentially required to integrate the energy storage devices at the microscale electronic appliances. Energy storage devices based on metal oxides are mostly fabricated with low mass loading per unit area which demonstrated low areal capacitance. It is still a challenge to fabricate supercapacitor devices of porous metal oxides with large areal capacitance. Herein we report microwave method followed by a pyrolysis of the as-prepared precursor is used to synthesize porous nickel cobaltite microspheres. Porous NiCo2O4 microspheres are capable to deliver large areal capacitance due to their high specific surface area and small crystallite size. The facile strategy is successfully demonstrated to fabricate aqueous-based asymmetric & symmetric supercapacitor devices of porous NiCo2O4 microspheres with high mass loading of electroactive materials. The asymmetric & symmetric devices exhibit maximum areal capacitance and energy density of 380 mF cm-2 & 19.1 Wh Kg-1 and 194 mF cm-2 & 4.5 Wh Kg-1 (based on total mass loading of 6.25 & 6.0 mg) respectively at current density of 1 mA cm-2. The successful fabrication of symmetric device also indicates that NiCo2O4 can also be used as the negative electrode material for futuristic asymmetric devices.

Tetrakis(1-imidazolyl) borate (BIM4) based zwitterionic and related molecules used as electron injection layers

DOEpatents

Li, Huaping; Xu, Yunhua; Bazan, Guillermo C

2013-02-05

Tetrakis(1-imidazolyl)borate (BIm4) based zwitterionic and/or related molecules for the fabrication of PLEDs is provided. Device performances with these materials approaches that of devices with Ba/Al cathodes for which the cathode contact is ohmic. Methods of producing such materials, and electron injection layers and devices containing these materials are also provided.

Stretchable carbon nanotube charge-trap floating-gate memory and logic devices for wearable electronics.

PubMed

Son, Donghee; Koo, Ja Hoon; Song, Jun-Kyul; Kim, Jaemin; Lee, Mincheol; Shim, Hyung Joon; Park, Minjoon; Lee, Minbaek; Kim, Ji Hoon; Kim, Dae-Hyeong

2015-05-26

Electronics for wearable applications require soft, flexible, and stretchable materials and designs to overcome the mechanical mismatch between the human body and devices. A key requirement for such wearable electronics is reliable operation with high performance and robustness during various deformations induced by motions. Here, we present materials and device design strategies for the core elements of wearable electronics, such as transistors, charge-trap floating-gate memory units, and various logic gates, with stretchable form factors. The use of semiconducting carbon nanotube networks designed for integration with charge traps and ultrathin dielectric layers meets the performance requirements as well as reliability, proven by detailed material and electrical characterizations using statistics. Serpentine interconnections and neutral mechanical plane layouts further enhance the deformability required for skin-based systems. Repetitive stretching tests and studies in mechanics corroborate the validity of the current approaches.

A deterministic guide for material and mode dependence of on-chip electro-optic modulator performance

NASA Astrophysics Data System (ADS)

Amin, Rubab; Suer, Can; Ma, Zhizhen; Sarpkaya, Ibrahim; Khurgin, Jacob B.; Agarwal, Ritesh; Sorger, Volker J.

2017-10-01

Electro-optic modulation is a key function in optical data communication and possible future optical computing engines. The performance of modulators intricately depends on the interaction between the actively modulated material and the propagating waveguide mode. While high-performing modulators were demonstrated before, the approaches were taken as ad-hoc. Here we show the first systematic investigation to incorporate a holistic analysis for high-performance and ultra-compact electro-optic modulators on-chip. We show that intricate interplay between active modulation material and optical mode plays a key role in the device operation. Based on physical tradeoffs such as index modulation, loss, optical confinement factors and slow-light effects, we find that bias-material-mode regions exist where high phase modulation and high loss (absorption) modulation is found. This work paves the way for a holistic design rule of electro-optic modulators for on-chip integration.

Understanding the Size-Dependent Sodium Storage Properties of Na2C6O6-Based Organic Electrodes for Sodium-Ion Batteries.

PubMed

Wang, Yaqun; Ding, Yu; Pan, Lijia; Shi, Ye; Yue, Zhuanghao; Shi, Yi; Yu, Guihua

2016-05-11

Organic electroactive materials represent a new generation of sustainable energy storage technology due to their unique features including environmental benignity, material sustainability, and highly tailorable properties. Here a carbonyl-based organic salt Na2C6O6, sodium rhodizonate (SR) dibasic, is systematically investigated for high-performance sodium-ion batteries. A combination of structural control, electrochemical analysis, and computational simulation show that rational morphological control can lead to significantly improved sodium storage performance. A facile antisolvent method was developed to synthesize microbulk, microrod, and nanorod structured SRs, which exhibit strong size-dependent sodium ion storage properties. The SR nanorod exhibited the best performance to deliver a reversible capacity of ∼190 mA h g(-1) at 0.1 C with over 90% retention after 100 cycles. At a high rate of 10 C, 50% of the capacity can be obtained due to enhanced reaction kinetics, and such high electrochemical activity maintains even at 80 °C. These results demonstrate a generic design route toward high-performance organic-based electrode materials for beyond Li-ion batteries. Using such a biomass-derived organic electrode material enables access to sustainable energy storage devices with low cost, high electrochemical performance and thermal stability.

Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement

NASA Astrophysics Data System (ADS)

Raad, Bhagwan Ram; Nigam, Kaushal; Sharma, Dheeraj; Kondekar, P. N.

2016-06-01

This script features a study of bandgap, gate material work function and gate dielectric engineering for enhancement of DC and Analog/RF performance, reduction in the hot carriers effect (HCEs) and drain induced barrier lowering (DIBL) for better device reliability. In this concern, the use of band gap and gate material work function engineering improves the device performance in terms of the ON-state current and suppressed ambipolar behaviour with maintaining the low OFF-state current. With these advantages, the use of gate material work function engineering imposes restriction on the high frequency performance due to increment in the parasitic capacitances and also introduces the hot carrier effects. Hence, the gate dielectric engineering with bandgap and gate material work function engineering are used in this paper to overcome the cons of the gate material work function engineering by obtaining a superior performance in terms of the current driving capability, ambipolar conduction, HCEs, DIBL and high frequency parameters of the device for ultra-low power applications. Finally, the optimization of length for different work function is performed to get the best out of this.

Self-Assembly High-Performance UV-vis-NIR Broadband β-In2Se3/Si Photodetector Array for Weak Signal Detection.

PubMed

Zheng, Zhaoqiang; Yao, Jiandong; Wang, Bing; Yang, Yibin; Yang, Guowei; Li, Jingbo

2017-12-20

The emergence of a rich variety of layered materials has attracted considerable attention in recent years because of their exciting properties. However, the applications of layered materials in optoelectronic devices are hampered by the low light absorption of monolayers/few layers, the lack of p-n junction, and the challenges for large-scale production. Here, we report a scalable production of β-In 2 Se 3 /Si heterojunction arrays using pulsed-laser deposition. Photodetectors based on the as-produced heterojunction array are sensitive to a broadband wavelength from ultraviolet (370 nm) to near-infrared (808 nm), showing a high responsivity (5.9 A/W), a decent current on/off ratio (∼600), and a superior detectivity (4.9 × 10 12 jones), simultaneously. These figures-of-merits are among the best values of the reported heterojunction-based photodetectors. In addition, these devices can further enable the detection of weak signals, as successfully demonstrated with weak light sources including a flashlight, lighter, and fluorescent light. Device physics modeling shows that their high performance is attributed to the strong light absorption of the relatively thick β-In 2 Se 3 film (20.3 nm) and the rational energy band structures of β-In 2 Se 3 and Si, which allows efficient separation of photoexcited electron-hole pairs. These results offer a new insight into the rational design of optoelectronic devices from the synergetic effect of layered materials as well as mature semiconductor technology.

Biologically templated assembly of hybrid semiconducting nanomesh for high performance field effect transistors and sensors

NASA Astrophysics Data System (ADS)

Byeon, Hye-Hyeon; Lee, Seung-Woo; Lee, Eun-Hee; Kim, Woong; Yi, Hyunjung

2016-10-01

Delicately assembled composites of semiconducting nanomaterials and biological materials provide an attractive interface for emerging applications, such as chemical/biological sensors, wearable health monitoring devices, and therapeutic agent releasing devices. The nanostructure of composites as a channel and a sensing material plays a critical role in the performance of field effect transistors (FETs). Therefore, it is highly desirable to prepare elaborate composite that can allow the fabrication of high performance FETs and also provide high sensitivity and selectivity in detecting specific chemical/biological targets. In this work, we demonstrate that high performance FETs can be fabricated with a hydrodynamically assembled composite, a semiconducting nanomesh, of semiconducting single-walled carbon nanotubes (S-SWNTs) and a genetically engineered M13 phage to show strong binding affinity toward SWNTs. The semiconducting nanomesh enables a high on/off ratio (~104) of FETs. We also show that the threshold voltage and the channel current of the nanomesh FETs are sensitive to the change of the M13 phage surface charge. This biological gate effect of the phage enables the detection of biologically important molecules such as dopamine and bisphenol A using nanomesh-based FETs. Our results provide a new insight for the preparation of composite material platform for highly controllable bio/electronics interfaces.

Nanostructured pseudocapacitive materials decorated 3D graphene foam electrodes for next generation supercapacitors.

PubMed

Patil, Umakant; Lee, Su Chan; Kulkarni, Sachin; Sohn, Ji Soo; Nam, Min Sik; Han, Suhyun; Jun, Seong Chan

2015-04-28

Nowadays, advancement in performance of proficient multifarious electrode materials lies conclusively at the core of research concerning energy storage devices. To accomplish superior capacitance performance the requirements of high capacity, better cyclic stability and good rate capability can be expected from integration of electrochemical double layer capacitor based carbonaceous materials (high power density) and pseudocapacitive based metal hydroxides/oxides or conducting polymers (high energy density). The envisioned three dimensional (3D) graphene foams are predominantly advantageous to extend potential applicability by offering a large active surface area and a highly conductive continuous porous network for fast charge transfer with decoration of nanosized pseudocapacitive materials. In this article, we review the latest methodologies and performance evaluation for several 3D graphene based metal oxides/hydroxides and conducting polymer electrodes with improved electrochemical properties for next-generation supercapacitors. The most recent research advancements of our and other groups in the field of 3D graphene based electrode materials for supercapacitors are discussed. To assess the studied materials fully, a careful interpretation and rigorous scrutiny of their electrochemical characteristics is essential. Auspiciously, both nano-structuration as well as confinement of metal hydroxides/oxides and conducting polymers onto a conducting porous 3D graphene matrix play a great role in improving the performance of electrodes mainly due to: (i) active material access over large surface area with fast charge transportation; (ii) synergetic effect of electric double layer and pseudocapacitive based charge storing.

Coupling carbon nanomaterials with photochromic molecules for the generation of optically responsive materials

PubMed Central

Zhang, Xiaoyan; Hou, Lili; Samorì, Paolo

2016-01-01

Multifunctional carbon-based nanomaterials offer routes towards the realization of smart and high-performing (opto)electronic (nano)devices, sensors and logic gates. Meanwhile photochromic molecules exhibit reversible transformation between two forms, induced by the absorption of electromagnetic radiation. By combining carbon-based nanomaterials with photochromic molecules, one can achieve reversible changes in geometrical structure, electronic properties and nanoscale mechanics triggering by light. This thus enables a reversible modulation of numerous physical and chemical properties of the carbon-based nanomaterials towards the fabrication of cognitive devices. This review examines the state of the art with respect to these responsive materials, and seeks to identify future directions for investigation. PMID:27067387

Nano-array integrated monolithic devices: toward rational materials design and multi-functional performance by scalable nanostructures assembly

DOE PAGES

Wang, Sibo; Ren, Zheng; Guo, Yanbing; ...

2016-03-21

We report the scalable three-dimensional (3-D) integration of functional nanostructures into applicable platforms represents a promising technology to meet the ever-increasing demands of fabricating high performance devices featuring cost-effectiveness, structural sophistication and multi-functional enabling. Such an integration process generally involves a diverse array of nanostructural entities (nano-entities) consisting of dissimilar nanoscale building blocks such as nanoparticles, nanowires, and nanofilms made of metals, ceramics, or polymers. Various synthetic strategies and integration methods have enabled the successful assembly of both structurally and functionally tailored nano-arrays into a unique class of monolithic devices. The performance of nano-array based monolithic devices is dictated bymore » a few important factors such as materials substrate selection, nanostructure composition and nano-architecture geometry. Therefore, the rational material selection and nano-entity manipulation during the nano-array integration process, aiming to exploit the advantageous characteristics of nanostructures and their ensembles, are critical steps towards bridging the design of nanostructure integrated monolithic devices with various practical applications. In this article, we highlight the latest research progress of the two-dimensional (2-D) and 3-D metal and metal oxide based nanostructural integrations into prototype devices applicable with ultrahigh efficiency, good robustness and improved functionality. Lastly, selective examples of nano-array integration, scalable nanomanufacturing and representative monolithic devices such as catalytic converters, sensors and batteries will be utilized as the connecting dots to display a roadmap from hierarchical nanostructural assembly to practical nanotechnology implications ranging from energy, environmental, to chemical and biotechnology areas.« less

Nano-array integrated monolithic devices: toward rational materials design and multi-functional performance by scalable nanostructures assembly

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Sibo; Ren, Zheng; Guo, Yanbing

We report the scalable three-dimensional (3-D) integration of functional nanostructures into applicable platforms represents a promising technology to meet the ever-increasing demands of fabricating high performance devices featuring cost-effectiveness, structural sophistication and multi-functional enabling. Such an integration process generally involves a diverse array of nanostructural entities (nano-entities) consisting of dissimilar nanoscale building blocks such as nanoparticles, nanowires, and nanofilms made of metals, ceramics, or polymers. Various synthetic strategies and integration methods have enabled the successful assembly of both structurally and functionally tailored nano-arrays into a unique class of monolithic devices. The performance of nano-array based monolithic devices is dictated bymore » a few important factors such as materials substrate selection, nanostructure composition and nano-architecture geometry. Therefore, the rational material selection and nano-entity manipulation during the nano-array integration process, aiming to exploit the advantageous characteristics of nanostructures and their ensembles, are critical steps towards bridging the design of nanostructure integrated monolithic devices with various practical applications. In this article, we highlight the latest research progress of the two-dimensional (2-D) and 3-D metal and metal oxide based nanostructural integrations into prototype devices applicable with ultrahigh efficiency, good robustness and improved functionality. Lastly, selective examples of nano-array integration, scalable nanomanufacturing and representative monolithic devices such as catalytic converters, sensors and batteries will be utilized as the connecting dots to display a roadmap from hierarchical nanostructural assembly to practical nanotechnology implications ranging from energy, environmental, to chemical and biotechnology areas.« less

Forming free and ultralow-power erase operation in atomically crystal TiO2 resistive switching

NASA Astrophysics Data System (ADS)

Dai, Yawei; Bao, Wenzhong; Hu, Linfeng; Liu, Chunsen; Yan, Xiao; Chen, Lin; Sun, Qingqing; Ding, Shijin; Zhou, Peng; Zhang, David Wei

2017-06-01

Two-dimensional layered materials (2DLMs) have attracted broad interest from fundamental sciences to industrial applications. Their applications in memory devices have been demonstrated, yet much still remains to explore optimal materials and device structure for practical application. In this work, a forming-free, bipolar resistive switching behavior are demonstrated in 2D TiO2-based resistive random access memory (RRAM). Physical adsorption method is adopted to achieve high quality, continuous 2D TiO2 network efficiently. The 2D TiO2 RRAM devices exhibit superior properties such as fast switching capability (20 ns of erase operation) and extremely low erase energy consumption (0.16 fJ). Furthermore, the resistive switching mechanism is attributed to the formation and rupture of oxygen vacancies-based percolation path in 2D TiO2 crystals. Our results pave the way for the implementation of high performance 2DLMs-based RRAM in the next generation non-volatile memory (NVM) application.

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

NASA Astrophysics Data System (ADS)

Ali, T.; Polakowski, P.; Riedel, S.; Büttner, T.; Kämpfe, T.; Rudolph, M.; Pätzold, B.; Seidel, K.; Löhr, D.; Hoffmann, R.; Czernohorsky, M.; Kühnel, K.; Thrun, X.; Hanisch, N.; Steinke, P.; Calvo, J.; Müller, J.

2018-05-01

The recent discovery of ferroelectricity in thin film HfO2 materials renewed the interest in ferroelectric FET (FeFET) as an emerging nonvolatile memory providing a potential high speed and low power Flash alternative. Here, we report more insight into FeFET performance by integrating two types of ferroelectric (FE) materials and varying their properties. By varying the material type [HfO2 (HSO) versus hafnium zirconium oxide (HZO)], optimum content (Si doping/mixture ratio), and film thickness, a material relation to FeFET device physics is concluded. As for the material type, an improved FeFET performance is observed for HZO integration with memory window (MW) comparable to theoretical values. For different Si contents, the HSO based FeFET exhibited a MW trend with different stabilized phases. Similarly, the HZO FeFET shows MW dependence on the Hf:Zr mixture ratio. A maximized MW is obtained with cycle ratios of 16:1 (HfO2:Si) and 1:1 (Hf:Zr) as measured on HSO and HZO based FeFETs, respectively. The thickness variation shows a trend of increasing MW with the increased FE layer thickness confirming early theoretical predictions. The FeFET material aspects and stack physics are discussed with insight into the interplay factors, while optimum FE material parameters are outlined in relation to performance.

Comparative study of graphene and its derivative materials as an electrode in OLEDs

NASA Astrophysics Data System (ADS)

Srivastava, Anshika; Kumar, Brijesh

2018-04-01

In current scenario, the organic materials have given a revolutionary evolution in the electronics industry. As, the organic light emitting diodes (OLEDs) have almost replaced the conventional technologies due to the use of organic based materials. However, the next generations OLEDs are intensively desired nowadays for high definition display technology. There are various concern involved in the successful design of OLEDs. Electrodes are one of the electrical conductors, which play a vital role in the construction of OLEDs. The performance of OLED is majorly affected by the material used for electrodes. Due to the requirement of transparent, flexible and inexpensive anodes in bottom emissive OLEDs, ITO was replaced by graphene material. Graphene is a single layer 2-dimensional transparent carbon allotrope which showed prodigious potential to escalate the device performance. Although graphene demonstrated impressive characteristics in various applications, it showed unfavorable work function for many other devices. Thus, derivative materials of graphene such as graphene oxide, graphane and β - graphdiyne were synthesized by several researchers. By comparing graphene and its derivatives as an anode of OLEDs, it has been found that graphene oxide showed the preeminent performance among all. In this paper, all the comparisons are investigated by using a standard device constructed by piling layers of anode/ m_MTDATA/ NPB/ Alq3: QAD/ Alq3/ cathode in TCAD ATLAS device simulator.

Recent progress in nanostructured next-generation field emission devices

NASA Astrophysics Data System (ADS)

Mittal, Gaurav; Lahiri, Indranil

2014-08-01

Field emission has been known to mankind for more than a century, and extensive research in this field for the last 40-50 years has led to development of exciting applications such as electron sources, miniature x-ray devices, display materials, etc. In the last decade, large-area field emitters were projected as an important material to revolutionize healthcare and medical devices, and space research. With the advent of nanotechnology and advancements related to carbon nanotubes, field emitters are demonstrating highly enhanced performance and novel applications. Next-generation emitters need ultra-high emission current density, high brightness, excellent stability and reproducible performance. Novel design considerations and application of new materials can lead to achievement of these capabilities. This article presents an overview of recent developments in this field and their effects on improved performance of field emitters. These advancements are demonstrated to hold great potential for application in next-generation field emission devices.

Achieving high performance polymer tandem solar cells via novel materials design

NASA Astrophysics Data System (ADS)

Dou, Letian

Organic photovoltaic (OPV) devices show great promise in low-cost, flexible, lightweight, and large-area energy-generation applications. Nonetheless, most of the materials designed today always suffer from the inherent disadvantage of not having a broad absorption range, and relatively low mobility, which limit the utilization of the full solar spectrum. Tandem solar cells provide an effective way to harvest a broader spectrum of solar radiation by combining two or more solar cells with different absorption bands. However, for polymer solar cells, the performance of tandem devices lags behind single-layer solar cells mainly due to the lack of suitable low-bandgap polymers (near-IR absorbing polymers). In this dissertation, in order to achieve high performance, we focus on design and synthesis of novel low bandgap polymers specifically for tandem solar cells. In Chapter 3, I demonstrate highly efficient single junction and tandem polymer solar cells featuring a spectrally matched low-bandgap conjugated polymer (PBDTT-DPP: bandgap, ˜1.44 eV). The polymer has a backbone based on alternating benzodithiophene and diketopyrrolopyrrole units. A single-layer device based on the polymer provides a power conversion efficiency of ˜6%. When the polymer is applied to tandem solar cells, a power conversion efficiency of 8.62% is achieved, which was the highest certified efficiency for a polymer solar cell. To further improve this material system, in Chapter 4, I show that the reduction of the bandgap and the enhancement of the charge transport properties of the low bandgap polymer PBDTT-DPP can be accomplished simultaneously by substituting the sulfur atoms on the DPP unit with selenium atoms. The newly designed polymer PBDTT-SeDPP (Eg = 1.38 eV) shows excellent photovoltaic performance in single junction devices with PCEs over 7% and photo-response up to 900 nm. Tandem polymer solar cells based on PBDTT-SeDPP are also demonstrated with a 9.5% PCE, which are more than 10% enhancement over those based on PBDTT-DPP. Finally, in Chapter 5, I demonstrate a new polymer system based on alternating dithienopyran and benzothiadiazole units with a bandgap of 1.38 eV, high mobility, deep highest occupied molecular orbital. As a result, a single-junction device shows high external quantum efficiency of >60% and spectral response that extends to 900 nm, with a power conversion efficiency of 7.9%. The polymer enables a solution processed tandem solar cell with certified 10.6% power conversion efficiency under standard reporting conditions, which is the first certified polymer solar cell efficiency over 10%.

Superconductivity devices: Commercial use of space

NASA Technical Reports Server (NTRS)

Haertling, Gene; Furman, Eugene; Hsi, Chi-Shiung; Li, Guang

1993-01-01

The processing and screen printing of the superconducting BSCCO and 123 YBCO materials on substrates is described. The resulting superconducting properties and the use of these materials as possible electrode materials for ferroelectrics at 77 K are evaluated. Also, work performed in the development of solid-state electromechanical actuators is reported. Specific details include the fabrication and processing of high strain PBZT and PLZT electrostrictive materials, the development of PSZT and PMN-based ceramics, and the testing and evaluation of these electrostrictive materials. Finally, the results of studies on a new processing technology for preparing piezoelectric and electrostrictive ceramic materials are summarized. The process involves a high temperature chemical reduction which leads to an internal pre-stressing of the oxide wafer. These reduced and internally biased oxide wafers (RAINBOW) can produce bending-mode actuator devices which possess a factor of ten more displacement and load bearing capacity than present-day benders.

High-response hybrid quantum dots- 2D conductor phototransistors: recent progress and perspectives

NASA Astrophysics Data System (ADS)

Sablon, Kimberly A.; Sergeev, Andrei; Najmaei, Sina; Dubey, Madan

2017-03-01

Having been inspired by the tremendous progress in material nanoscience and device nanoengineering, hybrid phototransistors combine solution processed colloidal semiconductor quantum dots (QDs) with graphene or two-dimensional (2D) semiconductor materials. Novel detectors demonstrate ultrahigh photoconductive gain, high and selective photoresponse, low noise, and very high responsivity in visible- and near-infrared ranges. The outstanding performance of phototransistors is primarily due to the strong, selective, and size tunable absorption of QDs and fast charge transfer in 2D high mobility conductors. However, the relatively small mobility of QD nanomaterials was a technological barrier, which limited the operating rate of devices. Very recent innovations in detector design and significant progress in QD ligand engineering provide effective tools for further qualitative improvements. This article reviews the recent progress in material science, nanophysics, and device engineering related to hybrid phototransistors. Detectors based on various QD nanomaterials and several 2D conductors are compared, and advantages and disadvantages of various nanomaterials for applications in hybrid phototransistors are identified. We also benchmark the experimental characteristics with model results that establish interrelations and tradeoffs between detector characteristics, such as responsivity, dark and noise currents, the photocarrier lifetime, response, and noise bandwidths. We have shown that the most recent phototransistors demonstrate performance limited by the fundamental generation recombination noise in high gain devices. Interrelation between the dynamic range of the detector and the detector sensitivity is discussed. The review is concluded with a brief discussion of the remaining challenges and possible significant improvements in the performance of hybrid phototransistors.

Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials.

PubMed

Park, Hamin; Shin, Gwang Hyuk; Lee, Khang June; Choi, Sung-Yool

2018-05-29

Hexagonal boron nitride (h-BN) is considered an ideal template for electronics based on two-dimensional (2D) materials, owing to its unique properties as a dielectric film. Most studies involving h-BN and its application to electronics have focused on its synthesis using techniques such as chemical vapor deposition, the electrical analysis of its surface state, and the evaluation of its performance. Meanwhile, processing techniques including etching methods have not been widely studied despite their necessity for device fabrication processes. In this study, we propose the atomic-scale etching of h-BN for integration into devices based on 2D materials, using Ar plasma at room temperature. A controllable etching rate, less than 1 nm min-1, was achieved and the low reactivity of the Ar plasma enabled the atomic-scale etching of h-BN down to a monolayer in this top-down approach. Based on the h-BN etching technique for achieving electrical contact with the underlying molybdenum disulfide (MoS2) layer of an h-BN/MoS2 heterostructure, a top-gate MoS2 field-effect transistor (FET) with h-BN gate dielectric was fabricated and characterized by high electrical performance based on the on/off current ratio and carrier mobility.

Perovskite solar cells: from materials to devices.

PubMed

Jung, Hyun Suk; Park, Nam-Gyu

2015-01-07

Perovskite solar cells based on organometal halide light absorbers have been considered a promising photovoltaic technology due to their superb power conversion efficiency (PCE) along with very low material costs. Since the first report on a long-term durable solid-state perovskite solar cell with a PCE of 9.7% in 2012, a PCE as high as 19.3% was demonstrated in 2014, and a certified PCE of 17.9% was shown in 2014. Such a high photovoltaic performance is attributed to optically high absorption characteristics and balanced charge transport properties with long diffusion lengths. Nevertheless, there are lots of puzzles to unravel the basis for such high photovoltaic performances. The working principle of perovskite solar cells has not been well established by far, which is the most important thing for understanding perovksite solar cells. In this review, basic fundamentals of perovskite materials including opto-electronic and dielectric properties are described to give a better understanding and insight into high-performing perovskite solar cells. In addition, various fabrication techniques and device structures are described toward the further improvement of perovskite solar cells. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study of silicone-based materials for the packaging of optoelectronic devices

NASA Astrophysics Data System (ADS)

Lin, Yeong-Her

The first part of this work is to evaluate the main materials used for the packaging of high power light-emitting diodes (LEDs), i.e., the die attach materials, the encapsulant materials, and high color rendering index(CRI) sol-gel composite materials. All of these materials had been discussed the performance, reliability, and issues in high power LED packages. High power white LEDs are created either from blue or near-ultraviolet chips encapsulated with a yellow phosphor, or from red-green-blue LED light mixing systems. The phosphor excited by blue LED chip was mostly used in experiment of this dissertation. The die attach materials contains filler particles possessing a maximum particle size less than 1.5 mum in diameter blended with epoxy polymer matrix. Such compositions enable thin bond line thickness, which decreases thermal resistance that exists between thermal interface materials and the corresponding mating surfaces. The thermal conductivity of nano silver die attach materials is relatively low, the thermal resistance from the junction to board is just 1.6 KW-1 in the bond line thickness of 5.3 mum, which is much lower than the thermal resistance using conventional die attach materials. The silicone die attach adhesive made in the lab cures through the free radical reaction of epoxy-functional organopolysiloxane and through the hydrosilylation reaction between alkenyl-functional organopolysiloxane and silicone-boned hydrogen-functional organopolysiloxane. By the combination of the free radical reaction and the hydrosilylation reaction, the low-molecular-weight silicone oil will not be out-migrated and not contaminate wire bondability to the LED chip and lead frame. Hence, the silicone die attach adhesive made in the lab can pass all reliability tests, such as operating life test JEDEC 85°C/85RH and room temperature operating life test. For LED encapsulating materials, most of commercial silicone encapsulants still suffer thermal/radiation induced degradations, and thus cause reliability issues and shorten the lifetime. A new high performance silicone has been developed and its performance has been compared with other commercial silicone products in the packaging of high power white LEDs. The high performance silicone also has better results than commercial high refractive index silicone and optical grade epoxy under JEDEC reliability standard for moisture sensitivity test. In synthesis of red dye-doped particles by sol-gel method, it is a novel method to get high color rendering index (CRI) LEDs. These red dye-doped particles, with average diameter of 5 mum, can be mixed with liquid encapsulants to form a uniform distribution in polymer matrix. The red dye-doped particles can be excited by phosphor-emitted yellow light instead of blue light from LED chip. Therefore, warm white LEDs with high CRI can be gotten at high lumen efficiency. The second part of this work is silicone elastomer for biomedical applications, especially in making urological implantable devices. A cross-linked, heat curable, addition-reaction silicone material is prepared. The material may be molded or formed into one or more medical devices. One such medical device could be a catheter used in urological applications. The material is a long term indwelling material that resists encrustation like a metal stent, but is more comfortable because it is silicone-based. The material can be made relatively cheaply compared to metal stents. Furthermore, the material is biocompatible with bladder epithelial cells.

Non-fullerene acceptors for organic solar cells

NASA Astrophysics Data System (ADS)

Yan, Cenqi; Barlow, Stephen; Wang, Zhaohui; Yan, He; Jen, Alex K.-Y.; Marder, Seth R.; Zhan, Xiaowei

2018-03-01

Non-fullerene acceptors (NFAs) are currently a major focus of research in the development of bulk-heterojunction organic solar cells (OSCs). In contrast to the widely used fullerene acceptors (FAs), the optical properties and electronic energy levels of NFAs can be readily tuned. NFA-based OSCs can also achieve greater thermal stability and photochemical stability, as well as longer device lifetimes, than their FA-based counterparts. Historically, the performance of NFA OSCs has lagged behind that of fullerene devices. However, recent developments have led to a rapid increase in power conversion efficiencies for NFA OSCs, with values now exceeding 13%, demonstrating the viability of using NFAs to replace FAs in next-generation high-performance OSCs. This Review discusses the important work that has led to this remarkable progress, focusing on the two most promising NFA classes to date: rylene diimide-based materials and materials based on fused aromatic cores with strong electron-accepting end groups. The key structure-property relationships, donor-acceptor matching criteria and aspects of device physics are discussed. Finally, we consider the remaining challenges and promising future directions for the NFA OSCs field.

4D nano-tomography of electrochemical energy devices using lab-based X-ray imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heenan, T. M. M.; Finegan, D. P.; Tjaden, B.

Electrochemical energy devices offer a variety of alternate means for low-carbon, multi-scale energy conversion and storage. Reactions in these devices are supported by electrodes with characteristically complex microstructures. To meet the increasing capacity and lifetime demands across a range of applications, it is essential to understand microstructural evolutions at a cell and electrode level which are thought to be critical aspects influencing material and device lifetime and performance. X-ray computed tomography (CT) has become a highly employed method for non-destructive characterisation of such microstructures with high spatial resolution. However, sub-micron resolutions present significant challenges for sample preparation and handling particularlymore » in 4D studies, (three spatial dimensions plus time). Here, microstructural information is collected from the same region of interest within two electrode materials: a solid oxide fuel cell and the positive electrode from a lithium-ion battery. Using a lab-based X-ray instrument, tomograms with sub-micron resolutions were obtained between thermal cycling. The intricate microstructural evolutions captured within these two materials provide model examples of 4D X-ray nano-CT capabilities in tracking challenging degradation mechanisms. This technique is valuable in the advancement of electrochemical research as well as broader applications for materials characterisation.« less

High mobility and high stability glassy metal-oxynitride materials and devices

NASA Astrophysics Data System (ADS)

Lee, Eunha; Kim, Taeho; Benayad, Anass; Hur, Jihyun; Park, Gyeong-Su; Jeon, Sanghun

2016-04-01

In thin film technology, future semiconductor and display products with high performance, high density, large area, and ultra high definition with three-dimensional functionalities require high performance thin film transistors (TFTs) with high stability. Zinc oxynitride, a composite of zinc oxide and zinc nitride, has been conceded as a strong substitute to conventional semiconductor film such as silicon and indium gallium zinc oxide due to high mobility value. However, zinc oxynitride has been suffered from poor reproducibility due to relatively low binding energy of nitrogen with zinc, resulting in the instability of composition and its device performance. Here we performed post argon plasma process on zinc oxynitride film, forming nano-crystalline structure in stable amorphous matrix which hampers the reaction of oxygen with zinc. Therefore, material properties and device performance of zinc oxynitride are greatly enhanced, exhibiting robust compositional stability even exposure to air, uniform phase, high electron mobility, negligible fast transient charging and low noise characteristics. Furthermore, We expect high mobility and high stability zinc oxynitride customized by plasma process to be applicable to a broad range of semiconductor and display devices.

High-speed electro-optic switch based on nonlinear polymer-clad waveguide incorporated with quasi-in-plane coplanar waveguide electrodes

NASA Astrophysics Data System (ADS)

Jiang, Ming-Hui; Wang, Xi-Bin; Xu, Qiang; Li, Ming; Niu, Dong-Hai; Sun, Xiao-Qiang; Wang, Fei; Li, Zhi-Yong; Zhang, Da-Ming

2018-01-01

Nonlinear optical (NLO) polymer is a promising material for active waveguide devices that can provide large bandwidth and high-speed response time. However, the performance of the active devices is not only related to the waveguide materials, but also related to the waveguide and electrode structures. In this paper, a high-speed Mach-Zehnder interferometer (MZI) type of electro-optic (EO) switch based on NLO polymer-clad waveguide was fabricated. The quasi-in-plane coplanar waveguide electrodes were also introduced to enhance the poling and modulating efficiency. The characteristic parameters of the waveguide and electrode were carefully designed and simulated. The switches were fabricated by the conventional micro-fabrication process. Under 1550-nm operating wavelength, a typical fabricated switch showed a low insertion loss of 10.2 dB, and the switching rise time and fall time were 55.58 and 57.98 ns, respectively. The proposed waveguide and electrode structures could be developed into other active EO devices and also used as the component in the polymer-based large-scale photonic integrated circuit.

Characterization of Novel Materials with Very Low Secondary Electron Emission Yield for Use in High-Power Microwave Devices

NASA Astrophysics Data System (ADS)

Svimonishvili, Tengiz; Zameroski, Nathan; Gilmore, Mark; Schamiloglu, Edl; Gaudet, John; Yan, Lincan

2004-11-01

Secondary Electron Emission (SEE) results from bombarding materials with electrons, atoms, or ions. The amount of secondary emission depends on factors such as bulk and surface properties of materials, energy of incident particles, and their angle of incidence. Total secondary electron emission yield, defined as the number of secondary electrons ejected per primary electron, is an important material parameter. Materials with high yield find use, for instance, in photomultiplier tubes, whereas materials with low yield, such as graphite, are used for SEE suppression in high-power microwave devices. The lower the SEE yield, the better the performance of high-power microwave devices (for example, gyrotrons). Employing a low-energy electron gun (energy range from 5 eV to 2000 eV), our work aims at characterizing and eventually identifying novel materials (with the lowest possible SEE yield) that will enhance operation and efficiency of high-power microwave devices.

Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems

PubMed Central

Kazior, Thomas E.

2014-01-01

Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III–V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III–V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III–V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications. PMID:24567473

Beyond CMOS: heterogeneous integration of III-V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems.

PubMed

Kazior, Thomas E

2014-03-28

Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III-V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III-V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III-V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications.

Carbon-Based Materials for Lithium-Ion Batteries, Electrochemical Capacitors, and Their Hybrid Devices.

PubMed

Yao, Fei; Pham, Duy Tho; Lee, Young Hee

2015-07-20

A rapidly developing market for portable electronic devices and hybrid electrical vehicles requires an urgent supply of mature energy-storage systems. As a result, lithium-ion batteries and electrochemical capacitors have lately attracted broad attention. Nevertheless, it is well known that both devices have their own drawbacks. With the fast development of nanoscience and nanotechnology, various structures and materials have been proposed to overcome the deficiencies of both devices to improve their electrochemical performance further. In this Review, electrochemical storage mechanisms based on carbon materials for both lithium-ion batteries and electrochemical capacitors are introduced. Non-faradic processes (electric double-layer capacitance) and faradic reactions (pseudocapacitance and intercalation) are generally explained. Electrochemical performance based on different types of electrolytes is briefly reviewed. Furthermore, impedance behavior based on Nyquist plots is discussed. We demonstrate the influence of cell conductivity, electrode/electrolyte interface, and ion diffusion on impedance performance. We illustrate that relaxation time, which is closely related to ion diffusion, can be extracted from Nyquist plots and compared between lithium-ion batteries and electrochemical capacitors. Finally, recent progress in the design of anodes for lithium-ion batteries, electrochemical capacitors, and their hybrid devices based on carbonaceous materials are reviewed. Challenges and future perspectives are further discussed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Amorphous Silicon Based Neutron Detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Liwei

2004-12-12

Various large-scale neutron sources already build or to be constructed, are important for materials research and life science research. For all these neutron sources, neutron detectors are very important aspect. However, there is a lack of a high-performance and low-cost neutron beam monitor that provides time and temporal resolution. The objective of this SBIR Phase I research, collaboratively performed by Midwest Optoelectronics, LLC (MWOE), the University of Toledo (UT) and Oak Ridge National Laboratory (ORNL), is to demonstrate the feasibility for amorphous silicon based neutron beam monitors that are pixilated, reliable, durable, fully packaged, and fabricated with high yield usingmore » low-cost method. During the Phase I effort, work as been focused in the following areas: 1) Deposition of high quality, low-defect-density, low-stress a-Si films using very high frequency plasma enhanced chemical vapor deposition (VHF PECVD) at high deposition rate and with low device shunting; 2) Fabrication of Si/SiO2/metal/p/i/n/metal/n/i/p/metal/SiO2/ device for the detection of alpha particles which are daughter particles of neutrons through appropriate nuclear reactions; and 3) Testing of various devices fabricated for alpha and neutron detection; As the main results: · High quality, low-defect-density, low-stress a-Si films have been successfully deposited using VHF PECVD on various low-cost substrates; · Various single-junction and double junction detector devices have been fabricated; · The detector devices fabricated have been systematically tested and analyzed. · Some of the fabricated devices are found to successfully detect alpha particles. Further research is required to bring this Phase I work beyond the feasibility demonstration toward the final prototype devices. The success of this project will lead to a high-performance, low-cost, X-Y pixilated neutron beam monitor that could be used in all of the neutron facilities worldwide. In addition, the technologies developed here could be used to develop X-ray and neutron monitors that could be used in the future for security checks at the airports and other critical facilities. The project would lead to devices that could significantly enhance the performance of multi-billion dollar neutron source facilities in the US and bring our nation to the forefront of neutron beam sciences and technologies which have enormous impact to materials, life science and military research and applications.« less

Thermal Properties and Phonon Spectral Characterization of Synthetic Boron Phosphide for High Thermal Conductivity Applications.

PubMed

Kang, Joon Sang; Wu, Huan; Hu, Yongjie

2017-12-13

Heat dissipation is an increasingly critical technological challenge in modern electronics and photonics as devices continue to shrink to the nanoscale. To address this challenge, high thermal conductivity materials that can efficiently dissipate heat from hot spots and improve device performance are urgently needed. Boron phosphide is a unique high thermal conductivity and refractory material with exceptional chemical inertness, hardness, and high thermal stability, which holds high promises for many practical applications. So far, however, challenges with boron phosphide synthesis and characterization have hampered the understanding of its fundamental properties and potential applications. Here, we describe a systematic thermal transport study based on a synergistic synthesis-experimental-modeling approach: we have chemically synthesized high-quality boron phosphide single crystals and measured their thermal conductivity as a record-high 460 W/mK at room temperature. Through nanoscale ballistic transport, we have, for the first time, mapped the phonon spectra of boron phosphide and experimentally measured its phonon mean free-path spectra with consideration of both natural and isotope-pure abundances. We have also measured the temperature- and size-dependent thermal conductivity and performed corresponding calculations by solving the three-dimensional and spectral-dependent phonon Boltzmann transport equation using the variance-reduced Monte Carlo method. The experimental results are in good agreement with that predicted by multiscale simulations and density functional theory, which together quantify the heat conduction through the phonon mode dependent scattering process. Our finding underscores the promise of boron phosphide as a high thermal conductivity material for a wide range of applications, including thermal management and energy regulation, and provides a detailed, microscopic-level understanding of the phonon spectra and thermal transport mechanisms of boron phosphide. The present study paves the way toward the establishment of a new framework, based on the phonon spectra-material structure relationship, for the rational design of high thermal conductivity materials and nano- to multiscale devices.

Fusing Benzo[c][1,2,5]oxadiazole Unit with Thiophene for Constructing Wide-bandgap High-performance IDT-based Polymer Solar Cell Donor Material.

PubMed

Song, Xin; Fan, Meijie; Zhang, Kaili; Ding, Dakang; Chen, Weiye; Li, Yonghai; Yu, Liangmin; Sun, Mingliang; Yang, Renqiang

2018-04-01

Benzo[c][1,2,5]oxadiazole (BO) moiety is a strong electron-withdrawing unit compared to benzo[c][1,2,5]thiadiazole (BT). It is usually introduced as an acceptor to construct narrow band-gap donor-acceptor (D-A) materials. Herein, the π-extended conjugated moiety dithieno[3',2':3,4″;2,3″:5,6]benzo[1,2-c][1,2,5]oxadiazole (BOT) was adopted as the acceptor moiety to design D-A polymers. Considering the more extended π-conjugated molecular system of BOT compared to the BO unit, a narrower optical band-gap is expected for BOT-based IDT polymer (PIDT-BOT). Unexpectedly, the UV-vis absorption spectra of PIDT-BOT films display a great hypochromatic shift of about 60 nm compared to a BO-based analog (PIDT-BO). The optical band-gaps of the materials are broadened from 1.63 eV (PIDT-BO) to 2.00 eV (PIDT-BOT) accordingly. Although the range of external quantum efficiency (EQE) of PIDT-BOT-based polymer solar cell (PSC) devices is not as wide as for PIDT-BO-based devices, the EQE response intensities of the PIDT-BOT based device are evidently high. As a result, PSC devices based on PIDT-BOT reveal the best power conversion efficiency at 6.08%. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

T-shaped emitter metal heterojunction bipolar transistors for submillimeter wave applications

NASA Technical Reports Server (NTRS)

Fung, Andy; Samoska, Lorene; Velebir, Jim; Siege, Peter; Rodwell, Mark; Paidi, Vamsi; Griffth, Zach; Urteaga, Miguel; Malik, Roger

2004-01-01

We report on the development of submillimeter wave transistors at JPL. The goal of the effort is to produce advance-reliable high frequency and high power amplifiers, voltage controlled oscillators, active multipliers, and high-speed mixed-signal circuits for space borne applications. The technology in development to achieve this is based on the Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT). The HBT is well suited for high speed, high power and uniform (across wafer) performance, due to the ability to tailor the material structure that electrons traverse through by well-controlled epitaxial growth methods. InP with its compatible lattice matched alloys such as indium gallium arsenide (InGaAs) and indium aluminium arsenide (InAlAs) provides for high electron velocities and high voltage breakdown capabilities. The epitaxial methods for this material system are fairly mature, however the implementation of high performance and reliable transistors are still under development by many laboratories. Our most recently fabricated, second generation mesa HBTs at JPL have extrapolated current gain cutoff frequency (FJ of 142GHz and power gain cutoff frequency (Fm,) of approximately 160GHz. This represents a 13% and 33% improvement of Ft and F, respectively, compared to the first generation mesa HBTs [l]. Analysis based on the University of California, Santa Barbara (UCSB) device model, RF device characteristics can be significantly improved by reducing base contact resistance and base metal contact width. We will describe our effort towards increasing transistor performance and yield.

Solution-Processed Wide-Bandgap Organic Semiconductor Nanostructures Arrays for Nonvolatile Organic Field-Effect Transistor Memory.

PubMed

Li, Wen; Guo, Fengning; Ling, Haifeng; Liu, Hui; Yi, Mingdong; Zhang, Peng; Wang, Wenjun; Xie, Linghai; Huang, Wei

2018-01-01

In this paper, the development of organic field-effect transistor (OFET) memory device based on isolated and ordered nanostructures (NSs) arrays of wide-bandgap (WBG) small-molecule organic semiconductor material [2-(9-(4-(octyloxy)phenyl)-9H-fluoren-2-yl)thiophene]3 (WG 3 ) is reported. The WG 3 NSs are prepared from phase separation by spin-coating blend solutions of WG 3 /trimethylolpropane (TMP), and then introduced as charge storage elements for nonvolatile OFET memory devices. Compared to the OFET memory device with smooth WG 3 film, the device based on WG 3 NSs arrays exhibits significant improvements in memory performance including larger memory window (≈45 V), faster switching speed (≈1 s), stable retention capability (>10 4 s), and reliable switching properties. A quantitative study of the WG 3 NSs morphology reveals that enhanced memory performance is attributed to the improved charge trapping/charge-exciton annihilation efficiency induced by increased contact area between the WG 3 NSs and pentacene layer. This versatile solution-processing approach to preparing WG 3 NSs arrays as charge trapping sites allows for fabrication of high-performance nonvolatile OFET memory devices, which could be applicable to a wide range of WBG organic semiconductor materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-sensitivity silicon nanowire phototransistors

NASA Astrophysics Data System (ADS)

Tan, Siew Li; Zhao, Xingyan; Dan, Yaping

2014-08-01

Silicon nanowires (SiNWs) have emerged as a promising material for high-sensitivity photodetection in the UV, visible and near-infrared spectral ranges. In this work, we demonstrate novel planar SiNW phototransistors on silicon-oninsulator (SOI) substrate using CMOS-compatible processes. The device consists of a bipolar transistor structure with an optically-injected base region. The electronic and optical properties of the SiNW phototransistors are investigated. Preliminary simulation and experimental results show that nanowire geometry, doping densities and surface states have considerable effects on the device performance, and that a device with optimized parameters can potentially outperform conventional Si photodetectors.

Quantitative description on structure–property relationships of Li-ion battery materials for high-throughput computations

PubMed Central

Wang, Youwei; Zhang, Wenqing; Chen, Lidong; Shi, Siqi; Liu, Jianjun

2017-01-01

Abstract Li-ion batteries are a key technology for addressing the global challenge of clean renewable energy and environment pollution. Their contemporary applications, for portable electronic devices, electric vehicles, and large-scale power grids, stimulate the development of high-performance battery materials with high energy density, high power, good safety, and long lifetime. High-throughput calculations provide a practical strategy to discover new battery materials and optimize currently known material performances. Most cathode materials screened by the previous high-throughput calculations cannot meet the requirement of practical applications because only capacity, voltage and volume change of bulk were considered. It is important to include more structure–property relationships, such as point defects, surface and interface, doping and metal-mixture and nanosize effects, in high-throughput calculations. In this review, we established quantitative description of structure–property relationships in Li-ion battery materials by the intrinsic bulk parameters, which can be applied in future high-throughput calculations to screen Li-ion battery materials. Based on these parameterized structure–property relationships, a possible high-throughput computational screening flow path is proposed to obtain high-performance battery materials. PMID:28458737

Functional integration and self-template synthesis of hollow core-shell carbon mesoporous spheres/Fe3O4/nitrogen-doped graphene to enhance catalytic activity in DSSCs.

PubMed

Yao, Jixin; Zhang, Kang; Wang, Wen; Zuo, Xueqin; Yang, Qun; Tang, Huaibao; Wu, Mingzai; Li, Guang

2018-05-03

Excellent corrosion resistance is crucial for photovoltaic devices to acquire high and stable performance under high corrosive complicated environments. Creative inspiration comes from sandwich construction, whereby Fe3O4 nanoparticles were anchored onto hollow core-shell carbon mesoporous microspheres and wrapped by N-graphene nanosheets (HCCMS/Fe3O4@N-RGO) to obtain integrated high corrosive resistance and stability. The as-prepared multiple composite material possesses outstanding performance as a result of structure optimization, performance improvement, and interface synergy. Therefore, it can effectively suppress corrosion from the electrolyte in recycled tests many times, indicating the ultrahigh corrosion resistance life of this double carbon-based nanocomposite. Furthermore, the electrical conductivity and conversion efficiency of the composite are well maintained due to the triple synergistic interactions, which could serve as a guideline in establishing high-performance multifunctional HCCMS/Fe3O4@N-RGO with great prospects in energy devices, such as lithium batteries, supercapacitors and electrode materials, etc.

Two-dimensional Cu2Si sheet: a promising electrode material for nanoscale electronics.

PubMed

Yam, Kah Meng; Guo, Na; Zhang, Chun

2018-06-15

Building electronic devices on top of two-dimensional (2D) materials has recently become one of most interesting topics in nanoelectronics. Finding high-performance 2D electrode materials is one central issue in 2D nanoelectronics. In the current study, based on first-principles calculations, we compare the electronic and transport properties of two nanoscale devices. One device consists of two single-atom-thick planar Cu 2 Si electrodes, and a nickel phthalocyanine (NiPc) molecule in the middle. The other device is made of often-used graphene electrodes and a NiPc molecule. Planer Cu 2 Si is a new type of 2D material that was recently predicted to exist and be stable under room temperature [11]. We found that at low bias voltages, the electric current through the Cu 2 Si-NiPc-Cu 2 Si junction is about three orders higher than that through graphene-NiPc-graphene. Detailed analysis shows that the surprisingly high conductivity of Cu 2 Si-NiPc-Cu 2 Si originates from the mixing of the Cu 2 Si state near Fermi energy and the highest occupied molecular orbital of NiPc. These results suggest that 2D Cu 2 Si may be an excellent candidate for electrode materials for future nanoscale devices.

Two-dimensional Cu2Si sheet: a promising electrode material for nanoscale electronics

NASA Astrophysics Data System (ADS)

Meng Yam, Kah; Guo, Na; Zhang, Chun

2018-06-01

Building electronic devices on top of two-dimensional (2D) materials has recently become one of most interesting topics in nanoelectronics. Finding high-performance 2D electrode materials is one central issue in 2D nanoelectronics. In the current study, based on first-principles calculations, we compare the electronic and transport properties of two nanoscale devices. One device consists of two single-atom-thick planar Cu2Si electrodes, and a nickel phthalocyanine (NiPc) molecule in the middle. The other device is made of often-used graphene electrodes and a NiPc molecule. Planer Cu2Si is a new type of 2D material that was recently predicted to exist and be stable under room temperature [11]. We found that at low bias voltages, the electric current through the Cu2Si–NiPc–Cu2Si junction is about three orders higher than that through graphene–NiPc–graphene. Detailed analysis shows that the surprisingly high conductivity of Cu2Si–NiPc–Cu2Si originates from the mixing of the Cu2Si state near Fermi energy and the highest occupied molecular orbital of NiPc. These results suggest that 2D Cu2Si may be an excellent candidate for electrode materials for future nanoscale devices.

Realizing 11.3% efficiency in PffBT4T-2OD fullerene organic solar cells via superior charge extraction at interfaces

NASA Astrophysics Data System (ADS)

Xu, Cheng; Wright, Matthew; Elumalai, Naveen Kumar; Mahmud, Md Arafat; Wang, Dian; Gonçales, Vinicius R.; Upama, Mushfika Baishakhi; Haque, Faiazul; Gooding, J. Justin; Uddin, Ashraf

2018-06-01

The influence of interface engineering on the performance and photovoltaic properties of the PffBT4T-2OD poly[(5,6-difluoro-2,1,3-benzothiadiazol-4,7-diyl)-alt-(3,3'''-di(2-octyldodecyl)-2,2';5',2″;5″,2'''-quaterthiophen-5,5'''-diy)] based polymer solar cells (PSCs) are investigated. Owing to the high crystallinity and processing parameter dependent morphology distribution of the PffBT4T-2OD polymer, the performance of the devices can vary significantly with power conversion efficiency (PCE) of around 10% has been reported via such morphology modification. In this work, we demonstrate the effect of trap state passivation at the electron transport layer (ETL)/Polymer interface on the performance of PffBT4T-2OD based PSCs. Aluminium doped ZnO (AZO) and pristine Zinc Oxide (ZnO) are employed as ETLs, which modified the polymer wettability and blend morphology. The interface engineered devices exhibited high PCE of over 11% with high J sc of about 22.5 mA/cm2 which is about 19% higher than that of the conventional ZnO based devices. The reason behind such distinct enhancements is investigated using several material and device characterization methods including electrochemical impedance spectroscopy (EIS). The recombination resistance ( R rec) of the AZO based device is found to be 4.5 times higher than that of the ZnO devices. The enhanced photovoltaic parameters of the AZO based device are attributed to the superior charge transport characteristics in the ETL as well as at the ETL/polymer interface, enabling effective charge extraction at the respective electrodes with much lesser recombination. The mechanism and the processes behind such enhancements are also elaborated in detail.

High-Performance Flexible Organic Nano-Floating Gate Memory Devices Functionalized with Cobalt Ferrite Nanoparticles.

PubMed

Jung, Ji Hyung; Kim, Sunghwan; Kim, Hyeonjung; Park, Jongnam; Oh, Joon Hak

2015-10-07

Nano-floating gate memory (NFGM) devices are transistor-type memory devices that use nanostructured materials as charge trap sites. They have recently attracted a great deal of attention due to their excellent performance, capability for multilevel programming, and suitability as platforms for integrated circuits. Herein, novel NFGM devices have been fabricated using semiconducting cobalt ferrite (CoFe2O4) nanoparticles (NPs) as charge trap sites and pentacene as a p-type semiconductor. Monodisperse CoFe2O4 NPs with different diameters have been synthesized by thermal decomposition and embedded in NFGM devices. The particle size effects on the memory performance have been investigated in terms of energy levels and particle-particle interactions. CoFe2O4 NP-based memory devices exhibit a large memory window (≈73.84 V), a high read current on/off ratio (read I(on)/I(off)) of ≈2.98 × 10(3), and excellent data retention. Fast switching behaviors are observed due to the exceptional charge trapping/release capability of CoFe2O4 NPs surrounded by the oleate layer, which acts as an alternative tunneling dielectric layer and simplifies the device fabrication process. Furthermore, the NFGM devices show excellent thermal stability, and flexible memory devices fabricated on plastic substrates exhibit remarkable mechanical and electrical stability. This study demonstrates a viable means of fabricating highly flexible, high-performance organic memory devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Medium band gap polymer based solution-processed high-κ composite gate dielectrics for ambipolar OFET

NASA Astrophysics Data System (ADS)

Canımkurbey, Betül; Unay, Hande; Çakırlar, Çiğdem; Büyükköse, Serkan; Çırpan, Ali; Berber, Savas; Altürk Parlak, Elif

2018-03-01

The authors present a novel ambipolar organic filed-effect transistors (OFETs) composed of a hybrid dielectric thin film of Ta2O5:PMMA nanocomposite material, and solution processed poly(selenophene, benzotriazole and dialkoxy substituted [1,2-b:4, 5-b‧] dithiophene (P-SBTBDT)-based organic semiconducting material as the active layer of the device. We find that the Ta2O5:PMMA insulator shows n-type conduction character, and its combination with the p-type P-SBTBDT organic semiconductor leads to an ambipolar OFET device. Top-gated OFETs were fabricated on glass substrate consisting of interdigitated ITO electrodes. P-SBTBDT-based material was spin coated on the interdigitated ITO electrodes. Subsequently, a solution processed Ta2O5:PMMA nanocomposite material was spin coated, thereby creating the gate dielectric layer. Finally, as a gate metal, an aluminum layer was deposited by thermal evaporation. The fabricated OFETs exhibited an ambipolar performance with good air-stability, high field-induced current and relatively high electron and hole mobilities although Ta2O5:PMMA nanocomposite films have slightly higher leakage current compared to the pure Ta2O5 films. Dielectric properties of the devices with different ratios of Ta2O5:PMMA were also investigated. The dielectric constant varied between 3.6 and 5.3 at 100 Hz, depending on the Ta2O5:PMMA ratio.

Conduction and Narrow Escape in Dense, Disordered, Particulate-based Heterogeneous Materials

NASA Astrophysics Data System (ADS)

Lechman, Jeremy

For optimal and reliable performance, many technological devices rely on complex, disordered heterogeneous or composite materials and their associated manufacturing processes. Examples include many powder and particulate-based materials found in phyrotechnic devices for car airbags, electrodes in energy storage devices, and various advanced composite materials. Due to their technological importance and complex structure, these materials have been the subject of much research in a number of fields. Moreover, the advent of new manufacturing techniques based on powder bed and particulate process routes, the potential of functional nano-structured materials, and the additional recognition of persistent shortcomings in predicting reliable performance of high consequence applications; leading to ballooning costs of fielding and maintaining advanced technologies, should motivate renewed efforts in understanding, predicting and controlling these materials' fabrication and behavior. Our particular effort seeks to understand the link between the top-down control presented in specific non-equilibrium processes routes (i.e., manufacturing processes) and the variability and uncertainty of the end product performance. Our ultimate aim is to quantify the variability inherent in these constrained dynamical or random processes and to use it to optimize and predict resulting material properties/performance and to inform component design with precise margins. In fact, this raises a set of deep and broad-ranging issues that have been recognized and as touching the core of a major research challenge at Sandia National Laboratories. In this talk, we will give an overview of recent efforts to address aspects of this vision. In particular the case of conductive properties of packed particulate materials will be highlighted. Combining a number of existing approaches we will discuss new insights and potential directions for further development toward the stated goal. Sandia National Laboratories is a multiprogram laboratory managed and operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000.

Solar energy conversion with photon-enhanced thermionic emission

NASA Astrophysics Data System (ADS)

Kribus, Abraham; Segev, Gideon

2016-07-01

Photon-enhanced thermionic emission (PETE) converts sunlight to electricity with the combined photonic and thermal excitation of charge carriers in a semiconductor, leading to electron emission over a vacuum gap. Theoretical analyses predict conversion efficiency that can match, or even exceed, the efficiency of traditional solar thermal and photovoltaic converters. Several materials have been examined as candidates for radiation absorbers and electron emitters, with no conclusion yet on the best set of materials to achieve high efficiency. Analyses have shown the complexity of the energy conversion and transport processes, and the significance of several loss mechanisms, requiring careful control of material properties and optimization of the device structure. Here we survey current research on PETE modeling, materials, and device configurations, outline the advances made, and stress the open issues and future research needed. Based on the substantial progress already made in this young topic, and the potential of high conversion efficiency based on theoretical performance limits, continued research in this direction is very promising and may yield a competitive technology for solar electricity generation.

Dopant-Free Tetrakis-Triphenylamine Hole Transporting Material for Efficient Tin-Based Perovskite Solar Cells.

PubMed

Ke, Weijun; Priyanka, Pragya; Vegiraju, Sureshraju; Stoumpos, Constantinos C; Spanopoulos, Ioannis; Soe, Chan Myae Myae; Marks, Tobin J; Chen, Ming-Chou; Kanatzidis, Mercouri G

2018-01-10

Developing dopant-free hole transporting layers (HTLs) is critical in achieving high-performance and robust state-of-the-art perovskite photovoltaics, especially for the air-sensitive tin-based perovskite systems. The commonly used HTLs require hygroscopic dopants and additives for optimal performance, which adds extra cost to manufacturing and limits long-term device stability. Here we demonstrate the use of a novel tetrakis-triphenylamine (TPE) small molecule prepared by a facile synthetic route as a superior dopant-free HTL for lead-free tin-based perovskite solar cells. The best-performing tin iodide perovskite cells employing the novel mixed-cation ethylenediammonium/formamidinium with the dopant-free TPE HTL achieve a power conversion efficiency as high as 7.23%, ascribed to the HTL's suitable band alignment and excellent hole extraction/collection properties. This efficiency is one of the highest reported so far for tin halide perovskite systems, highlighting potential application of TPE HTL material in low-cost high-performance tin-based perovskite solar cells.

Hierarchical ternary Ni-Co-Se nanowires for high-performance supercapacitor device design.

PubMed

Guo, Kailu; Cui, Shizhong; Hou, Hongwei; Chen, Weihua; Mi, Liwei

2016-12-06

Large-scale uniform Ni-Co-Se bimetallic ternary nanowires have been successfully synthesized through a successive cation exchange. First, NiSe nanowires in situ grown on nickel foam (NF) were prepared by a facile solvothermal route. Next, a series of ternary materials possessing different proportions of Ni and Co were fabricated by a Co-exchange method using the Ni@NiSe material as a template, which effectively achieved morphological inheritance from the parent material. To explore the electrochemical performance, all synthetic materials were assembled into asymmetric supercapacitor devices. Among asymmetric supercapacitor devices, the Ni@Ni 0.8 Co 0.2 Se//active carbon (AC) device exhibited a high specific capacitance of 86 F g -1 at a current density of 1 A g -1 and excellent cycling stability with virtually no decrease in capacitance after 2000 continuous charge-discharge cycles. This device still delivered an energy density of 17 Wh kg -1 even at a high power density of 1526.8 W kg -1 . These superior electrochemical properties of Ni@Ni 0.8 Co 0.2 Se as an electrode material for supercapacitor devices confirmed the synergistic effect between Co and Ni ions, suggesting their potential application in the field of energy storage.

A molecular nematic liquid crystalline material for high-performance organic photovoltaics

PubMed Central

Sun, Kuan; Xiao, Zeyun; Lu, Shirong; Zajaczkowski, Wojciech; Pisula, Wojciech; Hanssen, Eric; White, Jonathan M.; Williamson, Rachel M.; Subbiah, Jegadesan; Ouyang, Jianyong; Holmes, Andrew B.; Wong, Wallace W.H.; Jones, David J.

2015-01-01

Solution-processed organic photovoltaic cells (OPVs) hold great promise to enable roll-to-roll printing of environmentally friendly, mechanically flexible and cost-effective photovoltaic devices. Nevertheless, many high-performing systems show best power conversion efficiencies (PCEs) with a thin active layer (thickness is ~100 nm) that is difficult to translate to roll-to-roll processing with high reproducibility. Here we report a new molecular donor, benzodithiophene terthiophene rhodanine (BTR), which exhibits good processability, nematic liquid crystalline behaviour and excellent optoelectronic properties. A maximum PCE of 9.3% is achieved under AM 1.5G solar irradiation, with fill factor reaching 77%, rarely achieved in solution-processed OPVs. Particularly promising is the fact that BTR-based devices with active layer thicknesses up to 400 nm can still afford high fill factor of ~70% and high PCE of ~8%. Together, the results suggest, with better device architectures for longer device lifetime, BTR is an ideal candidate for mass production of OPVs. PMID:25586307

CuSb(S,Se)2 thin film heterojunction photovoltaic devices

NASA Astrophysics Data System (ADS)

Welch, Adam W.

Thin film heterojunction solar cells based on CuSb(S,Se)2 absorbers are investigated for two primary reasons. First, antimony is more abundant and less expensive than elements used in current thin film photovoltaics, In, Ga, and Te, and so, successful integration of Sb based materials offers greater diversification and scalability of solar energy. Second, the CuSb(S,Se) 2 ternary is chemically, electronically, and optically similar to the well-known, high efficiency, CuIn(S,Se)2 based materials. It is therefore postulated that the copper antimony ternaries will have similar defect tolerant electronic transport that may allow for similar highly efficient photoconversion. However, CuSb(S,Se)2 forms a layered crystal structure, different from the tetrahedral coordination found in conventional solar absorbers, due to the non-bonding lone pair of electrons on the antimony site. Thus examination of 2D antimony ternaries will lend insight into the role of structure in photoconversion processes. To address these questions, the semiconductors of interest (CuSbS 2 & CuSbSe2) were first synthesized on glass by combinatorial methods, to more quickly optimize process condi- tions. Radio-frequency (RF) magnetron co-sputtering from Sb2(S,Se)3 and Cu 2(S,Se) targets were used, without rotation, to produce chemical and flux graded libraries which were then subjected to high throughput characterization of structure (XRD), composition (XRF), conductivity (4pp), and optical absorption (UV/Vis/NIR). This approach rapidly identified processes that generated phase pure material with tunable carrier concentration by applying excess Sb 2(S,Se)3 within a temperature window bound by the volatility of Sb2(S,Se)3 and stability of the ternary phase. The resulting phase pure thin films were then incor- porated into the traditional CuInGaSe2 (CIGS) substrate photovoltaic (PV) architecture, and the resulting device performance was correlated to gradients in composition, sputter flux, absorber thickness, and grain orientation. This combinatorial work was complimented by individual measurements of photoluminescence (PL), capacitance-voltage (CV), external quantum efficiency (EQE), terahertz (THz) spectroscopy, and photoelectrochemical (PEC) measurements. CuSbS2-based libraries produced devices with just 1% power conversion efficiency, mainly limited by high levels of recombination associated with high density of shallow trap states. Conversely, the selenide variant showed more promise, with initial cells producing significantly more photocurrent, nearly 60% of the theoretical maximum, and likewise 5% efficient devices, mainly due to fewer trap states. However, the selenide is still limited by short carrier diffusion lengths, therefore demonstrating that structure does seem to play limiting role in photoconversion processes. Overall, the CuSb(S,Se)2 material system is only likely to merit further exploration if it can be incorporated into an alternate device structure less dependent on collection by diffusion. There is a small possibility that oriented selenide films with anisotropic carrier lifetimes could improve performance, though this is unlikely considering initial oriented sulfide films did not demonstrate much improved performance. This work demonstrated the utility of the combinatorial device fabrication applied to the search for new, scalable photovoltaic materials. An innovative chemical system was quickly explored in-depth and optimized for devices; continued efforts of this type are likely to produce better materials, or at the very least, quickly expand the library of well-scrutinized photovoltaic materials.

Materials and processing approaches for foundry-compatible transient electronics.

PubMed

Chang, Jan-Kai; Fang, Hui; Bower, Christopher A; Song, Enming; Yu, Xinge; Rogers, John A

2017-07-11

Foundry-based routes to transient silicon electronic devices have the potential to serve as the manufacturing basis for "green" electronic devices, biodegradable implants, hardware secure data storage systems, and unrecoverable remote devices. This article introduces materials and processing approaches that enable state-of-the-art silicon complementary metal-oxide-semiconductor (CMOS) foundries to be leveraged for high-performance, water-soluble forms of electronics. The key elements are ( i ) collections of biodegradable electronic materials (e.g., silicon, tungsten, silicon nitride, silicon dioxide) and device architectures that are compatible with manufacturing procedures currently used in the integrated circuit industry, ( ii ) release schemes and transfer printing methods for integration of multiple ultrathin components formed in this way onto biodegradable polymer substrates, and ( iii ) planarization and metallization techniques to yield interconnected and fully functional systems. Various CMOS devices and circuit elements created in this fashion and detailed measurements of their electrical characteristics highlight the capabilities. Accelerated dissolution studies in aqueous environments reveal the chemical kinetics associated with the underlying transient behaviors. The results demonstrate the technical feasibility for using foundry-based routes to sophisticated forms of transient electronic devices, with functional capabilities and cost structures that could support diverse applications in the biomedical, military, industrial, and consumer industries.

Materials and processing approaches for foundry-compatible transient electronics

NASA Astrophysics Data System (ADS)

Chang, Jan-Kai; Fang, Hui; Bower, Christopher A.; Song, Enming; Yu, Xinge; Rogers, John A.

2017-07-01

Foundry-based routes to transient silicon electronic devices have the potential to serve as the manufacturing basis for “green” electronic devices, biodegradable implants, hardware secure data storage systems, and unrecoverable remote devices. This article introduces materials and processing approaches that enable state-of-the-art silicon complementary metal-oxide-semiconductor (CMOS) foundries to be leveraged for high-performance, water-soluble forms of electronics. The key elements are (i) collections of biodegradable electronic materials (e.g., silicon, tungsten, silicon nitride, silicon dioxide) and device architectures that are compatible with manufacturing procedures currently used in the integrated circuit industry, (ii) release schemes and transfer printing methods for integration of multiple ultrathin components formed in this way onto biodegradable polymer substrates, and (iii) planarization and metallization techniques to yield interconnected and fully functional systems. Various CMOS devices and circuit elements created in this fashion and detailed measurements of their electrical characteristics highlight the capabilities. Accelerated dissolution studies in aqueous environments reveal the chemical kinetics associated with the underlying transient behaviors. The results demonstrate the technical feasibility for using foundry-based routes to sophisticated forms of transient electronic devices, with functional capabilities and cost structures that could support diverse applications in the biomedical, military, industrial, and consumer industries.

Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

NASA Astrophysics Data System (ADS)

Younis, Adnan; Chu, Dewei; Li, Sean

2015-09-01

Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective.

Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

PubMed Central

Younis, Adnan; Chu, Dewei; Li, Sean

2015-01-01

Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective. PMID:26324073

Material selection for climbing hardware using the example of a belay device

NASA Astrophysics Data System (ADS)

Semenov, E.; Schwanitz, S.; Odenwald, S.

2017-03-01

The aim of the research project was to design a novel climbing belay device. The present article describes the details of the therefor performed material selection. Literature research on the materials used in commercially available belay devices revealed a lack of definite information. Thus, a pilot x-ray fluorescence (XRF) test was performed on a small sample of common aluminium belay devices. It revealed the use of a variety of different alloy systems. The selection process continued by compiling a thorough list of constraints and objectives for this safety related piece of sports equipment. Different material options including non-aluminium-materials were discussed. The final material choice was a high strength aluminium alloy with a T6 thermal treatment. The device was designed and calculated by use of CAD and FEM software respectively, aiming to reduce weight. After manufacturing the strength, usability and friction properties of the device have been successfully tested.

Advances in Perovskite Solar Cells

PubMed Central

Zuo, Chuantian; Bolink, Henk J.; Han, Hongwei; Huang, Jinsong

2016-01-01

Organolead halide perovskite materials possess a combination of remarkable optoelectronic properties, such as steep optical absorption edge and high absorption coefficients, long charge carrier diffusion lengths and lifetimes. Taken together with the ability for low temperature preparation, also from solution, perovskite‐based devices, especially photovoltaic (PV) cells have been studied intensively, with remarkable progress in performance, over the past few years. The combination of high efficiency, low cost and additional (non‐PV) applications provides great potential for commercialization. Performance and applications of perovskite solar cells often correlate with their device structures. Many innovative device structures were developed, aiming at large‐scale fabrication, reducing fabrication cost, enhancing the power conversion efficiency and thus broadening potential future applications. This review summarizes typical structures of perovskite solar cells and comments on novel device structures. The applications of perovskite solar cells are discussed. PMID:27812475

Performance analysis of resistive switching devices based on BaTiO3 thin films

NASA Astrophysics Data System (ADS)

Samardzic, Natasa; Kojic, Tijana; Vukmirovic, Jelena; Tripkovic, Djordjije; Bajac, Branimir; Srdic, Vladimir; Stojanovic, Goran

2016-03-01

Resitive switching devices, memristors, have recenty attracted much attention due to promising performances and potential applications in the field of logic and memory devices. Here, we present thin film BaTiO3 based memristor fabricated using ink-jet printing technique. Active material is a single layer barium titanate film with thickness of ̴100 nm, sandwitched between metal electodes. Printing parameters were optimized aiming to achieve stable drop flow and uniform printed layer. Current-voltage characteristics show typical memristive behavior with pinched hysteresis loop crossed at the origin, with marked differences between High Resistive State (HRS) and Low Resistive State (LRS). Obtained resistive states are stable during numerous switching processes. The device also shows unipolar switching effect for negative voltage impulses. Variable voltage impulse amplitudes leads to the shifting of the energy levels of electode contacts resulting in changing of the overall current through the device. Structural charcterization have been performed using XRD analysis and SEM micrography. High-temperature current-voltage measurements combined with transport parameter analysis using Hall efect measurement system (HMS 3000) and Impedance Analyzer AC measurements allows deeper insigth into conduction mechanism of ferroelectric memristors.

Optimisation of oxygen ion transport in materials for ceramic membrane devices.

PubMed

Kilner, J A

2007-01-01

Oxygen transport in ceramic oxide materials has received much attention over the past few decades. Much of this interest has stemmed from the desire to construct high temperature electrochemical devices for energy conversion, an example being the solid oxide fuel cell. In order to achieve high performance for these devices, insights are needed in how to achieve optimum performance from the functional components such as the electrolytes and electrodes. This includes the optimisation of oxygen transport through the crystal lattice of electrode and electrolyte materials and across the homogeneous (grain boundary) and heterogeneous interfaces that exist in real devices. Strategies are discussed for the optimisation of these quantities and current problems in the characterisation of interfacial transport are explored.

High-performance axicon lenses based on high-contrast, multilayer gratings

NASA Astrophysics Data System (ADS)

Doshay, Sage; Sell, David; Yang, Jianji; Yang, Rui; Fan, Jonathan A.

2018-01-01

Axicon lenses are versatile optical elements that can convert Gaussian beams to Bessel-like beams. In this letter, we demonstrate that axicons operating with high efficiencies and at large angles can be produced using high-contrast, multilayer gratings made from silicon. Efficient beam deflection of incident monochromatic light is enabled by higher-order optical modes in the silicon structure. Compared to diffractive devices made from low-contrast materials such as silicon dioxide, our multilayer devices have a relatively low spatial profile, reducing shadowing effects and enabling high efficiencies at large deflection angles. In addition, the feature sizes of these structures are relatively large, making the fabrication of near-infrared devices accessible with conventional optical lithography. Experimental lenses with deflection angles as large as 40° display field profiles that agree well with theory. Our concept can be used to design optical elements that produce higher-order Bessel-like beams, and the combination of high-contrast materials with multilayer architectures will more generally enable new classes of diffractive photonic structures.

High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers.

PubMed

Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Yi, Mingdong; Wang, Laiyuan; Wu, Dequn; Xie, Linghai; Huang, Wei

2017-08-01

Nonvolatile organic field-effect transistor (OFET) memory devices based on pentacene/ N , N '-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n-type P13 embedded in p-type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well-like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge-trapping property of the poly(4-vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high-performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory.

Polymer/graphite oxide composites as high-performance materials for electric double layer capacitors

NASA Astrophysics Data System (ADS)

Tien, Chien-Pin; Teng, Hsisheng

A single graphene sheet represents a carbon material with the highest surface area available to accommodating molecules or ions for physical and chemical interactions. Here we demonstrate in an electric double layer capacitor the outstanding performance of graphite oxide for providing a platform for double layer formation. Graphite oxide is generally the intermediate compound for obtaining separated graphene sheets. Instead of reduction with hydrazine, we incorporate graphite oxide with a poly(ethylene oxide)-based polymer and anchor the graphene oxide sheets with poly(propylene oxide) diamines. This polymer/graphite oxide composite shows in a "dry" gel-electrolyte system a double layer capacitance as high as 130 F g -1. The polymer incorporation developed here can significantly diversify the application of graphene-based materials in energy storage devices.

High-Performing Polycarbazole Derivatives for Efficient Solution-Processing of Organic Solar Cells in Air.

PubMed

Burgués-Ceballos, Ignasi; Hermerschmidt, Felix; Akkuratov, Alexander V; Susarova, Diana K; Troshin, Pavel A; Choulis, Stelios A

2015-12-21

The application of conjugated materials in organic photovoltaics (OPVs) is usually demonstrated in lab-scale spin-coated devices that are processed under controlled inert conditions. Although this is a necessary step to prove high efficiency, testing of promising materials in air should be done in the early stages of research to validate their real potential for low-cost, solution-processed, and large-scale OPVs. Also relevant for approaching commercialization needs is the use of printing techniques that are compatible with upscaling. Here, solution processing of organic solar cells based on three new poly(2,7-carbazole) derivatives is efficiently transferred, without significant losses, to air conditions and to several deposition methods using a simple device architecture. High efficiencies in the range between 5.0 % and 6.3 % are obtained in (rigid) spin-coated, doctor-bladed, and (flexible) slot-die-coated devices, which surpass the reference devices based on poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] (PCDTBT). In contrast, inkjet printing does not provide reliable results with the presented polymers, which is attributed to their high molecular weight. When the device area in the best-performing system is increased from 9 mm(2) to 0.7 cm(2), the efficiency drops from 6.2 % to 5.0 %. Photocurrent mapping reveals inhomogeneous current generation derived from changes in the thickness of the active layer. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Gallium arsenide-gallium nitride wafer fusion and the n-aluminum gallium arsenide/p-gallium arsenide/n-gallium nitride double heterojunction bipolar transistor

NASA Astrophysics Data System (ADS)

Estrada, Sarah M.

This dissertation describes the n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor (HBT), the first transistor formed via wafer fusion. The fusion process was developed as a way to combine lattice-mismatched materials for high-performance electronic devices, not obtainable via conventional all-epitaxial formation methods. Despite the many challenges of wafer fusion, successful transistors were demonstrated and improved, via the optimization of material structure and fusion process conditions. Thus, this project demonstrated the integration of disparate device materials, chosen for their optimal electronic properties, unrestricted by the conventional (and very limiting) requirement of lattice-matching. By combining an AlGaAs-GaAs emitter-base with a GaN collector, the HBT benefited from the high breakdown voltage of GaN, and from the high emitter injection efficiency and low base transit time of AlGaAs-GaAs. Because the GaAs-GaN lattice mismatch precluded an all-epitaxial formation of the HBT, the GaAs-GaN heterostructure was formed via fusion. This project began with the development of a fusion process that formed mechanically robust and electrically active GaAs-GaN heterojunctions. During the correlation of device electrical performance with a systematic variation of fusion conditions over a wide range (500--750°C, 0.5--2hours), a mid-range fusion temperature was found to induce optimal HBT electrical performance. Transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) were used to assess possible reasons for the variations observed in device electrical performance. Fusion process conditions were correlated with electrical (I-V), structural (TEM), and chemical (SIMS) analyses of the resulting heterojunctions, in order to investigate the trade-off between increased interfacial disorder (TEM) with low fusion temperature and increased diffusion (SIMS) with high fusion temperature. The best do device results (IC ˜ 2.9 kA/cm2 and beta ˜ 3.5, at VCE = 20V and IB = 10mA) were obtained with an HBT formed via fusion at 600°C for 1 hour, with an optimized base-collector design. This was quite an improvement, as compared to an HBT with a simpler base-collector structure, also fused at 600°C for 1 hour (IC ˜ 0.83 kA/cm2 and beta ˜ 0.89, at VCE = 20V and IB = 10mA). Fused AlGaAs-GaAs-GaAs HBTs were compared to fused AlGaAs-GaAs-GaN HBTs, demonstrating that the use of a wider bandgap collector (Eg,GaN > Eg,GaAs) did indeed improve HBT performance at high applied voltages, as desired for high-power applications.

Effect of chemically converted graphene as an electrode interfacial modifier on device-performances of inverted organic photovoltaic cells

NASA Astrophysics Data System (ADS)

Kang, Tae-Woon; Noh, Yong-Jin; Yun, Jin-Mun; Yang, Si-Young; Yang, Yong-Eon; Lee, Hae-Seong; Na, Seok-In

2015-06-01

This study examined the effects of chemically converted graphene (CCG) materials as a metal electrode interfacial modifier on device-performances of inverted organic photovoltaic cells (OPVs). As CCG materials for interfacial layers, a conventional graphene oxide (GO) and reduced graphene oxide (rGO) were prepared, and their functions on OPV-performances were compared. The inverted OPVs with CCG materials showed all improved cell-efficiencies compared with the OPVs with no metal/bulk-heterojunction (BHJ) interlayers. In particular, the inverted OPVs with reduction form of GO showed better device-performances than those with GO and better device-stability than poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS)-based inverted solar cells, showing that the rGO can be more desirable as a metal/BHJ interfacial material for fabricating inverted-configuration OPVs.

Material-Independent Nanotransfer onto a Flexible Substrate Using Mechanical-Interlocking Structure.

PubMed

Seo, Min-Ho; Choi, Seon-Jin; Park, Sang Hyun; Yoo, Jae-Young; Lim, Sung Kyu; Lee, Jae-Shin; Choi, Kwang-Wook; Jo, Min-Seung; Kim, Il-Doo; Yoon, Jun-Bo

2018-05-22

Nanowire-transfer technology has received much attention thanks to its capability to fabricate high-performance flexible nanodevices with high simplicity and throughput. However, it is still challenging to extend the conventional nanowire-transfer method to the fabrication of a wide range of devices since a chemical-adhesion-based nanowire-transfer mechanism is complex and time-consuming, hindering successful transfer of diverse nanowires made of various materials. Here, we introduce a material-independent mechanical-interlocking-based nanowire-transfer (MINT) method, fabricating ultralong and fully aligned nanowires on a large flexible substrate (2.5 × 2 cm 2 ) in a highly robust manner. For the material-independent nanotransfer, we developed a mechanics-based nanotransfer method, which employs a dry-removable amorphous carbon (a-C) sacrificial layer between a vacuum-deposited nanowire and the underlying master mold. The controlled etching of the sacrificial layer enables the formation of a mechanical-interlocking structure under the nanowire, facilitating peeling off of the nanowire from the master mold robustly and reliably. Using the developed MINT method, we successfully fabricated various metallic and semiconductor nanowire arrays on flexible substrates. We further demonstrated that the developed method is well suited to the reliable fabrication of highly flexible and high-performance nanoelectronic devices. As examples, a fully aligned gold (Au) microheater array exhibited high bending stability (10 6 cycling) and ultrafast (∼220 ms) heating operation up to ∼100 °C. An ultralong Au heater-embedded cuprous-oxide (Cu 2 O) nanowire chemical gas sensor showed significantly improved reversible reaction kinetics toward NO 2 with 10-fold enhancement in sensitivity at 100 °C.

Nanostructured metal sulfides for energy storage

NASA Astrophysics Data System (ADS)

Rui, Xianhong; Tan, Huiteng; Yan, Qingyu

2014-08-01

Advanced electrodes with a high energy density at high power are urgently needed for high-performance energy storage devices, including lithium-ion batteries (LIBs) and supercapacitors (SCs), to fulfil the requirements of future electrochemical power sources for applications such as in hybrid electric/plug-in-hybrid (HEV/PHEV) vehicles. Metal sulfides with unique physical and chemical properties, as well as high specific capacity/capacitance, which are typically multiple times higher than that of the carbon/graphite-based materials, are currently studied as promising electrode materials. However, the implementation of these sulfide electrodes in practical applications is hindered by their inferior rate performance and cycling stability. Nanostructures offering the advantages of high surface-to-volume ratios, favourable transport properties, and high freedom for the volume change upon ion insertion/extraction and other reactions, present an opportunity to build next-generation LIBs and SCs. Thus, the development of novel concepts in material research to achieve new nanostructures paves the way for improved electrochemical performance. Herein, we summarize recent advances in nanostructured metal sulfides, such as iron sulfides, copper sulfides, cobalt sulfides, nickel sulfides, manganese sulfides, molybdenum sulfides, tin sulfides, with zero-, one-, two-, and three-dimensional morphologies for LIB and SC applications. In addition, the recently emerged concept of incorporating conductive matrices, especially graphene, with metal sulfide nanomaterials will also be highlighted. Finally, some remarks are made on the challenges and perspectives for the future development of metal sulfide-based LIB and SC devices.

Materials Compositions for Lithium Ion Batteries with Extended Thermal Stability

NASA Astrophysics Data System (ADS)

Kalaga, Kaushik

Advancements in portable electronics have generated a pronounced demand for rechargeable energy storage devices with superior capacity and reliability. Lithium ion batteries (LIBs) have evolved as the primary choice of portable power for several such applications. While multiple variations have been developed, safety concerns of commercial technologies limit them to atmospheric temperature operability. With several niche markets such as aerospace, defense and oil & gas demanding energy storage at elevated temperatures, there is a renewed interest in developing rechargeable batteries that could survive temperatures beyond 100°C. Instability of critical battery components towards extreme thermal and electrochemical conditions limit their usability at high temperatures. This study deals with developing material configurations for LIB components to stabilize them at such temperatures. Flammable organic solvent based electrolytes and low melting polymer based separators have been identified as the primary bottleneck for LIBs to survive increasing temperature. Furthermore, thermally activated degradation processes in oxide based electrodes have been identified as the reason for their limited lifetime. A quasi-solid composite comprising of room temperature ionic liquids (RTILs) and Clay was developed as an electrolyte/separator hybrid and tested to be stable up to 120°C. These composites facilitate complete reversible Li intercalation in lithium titanate (LTO) with a stable capacity of 120 mAh g-1 for several cycles of charge and discharge while simultaneously resisting severe thermal conditions. Modified phosphate based electrodes were introduced as a reliable alternative for operability at high temperatures in this study. These systems were shown to deliver stable reversible capacity for numerous charge/discharge cycles at elevated temperatures. Higher lithium intercalation potential of the developed cathode materials makes them interesting candidates for high voltage lithium batteries, which may be dubbed as the next generation devices. Architectural engineering of battery components to amplify the device performance is also discussed. 3D electrode structures developed using CVD and electrodeposition techniques demonstrated significant enhancement in performance when compared to their 2D analogues. The study has established the prospects of LIBs at high temperatures through material tuning and engineering approaches and envisage a scope for viable devices.

Layered conductive polymer on nylon membrane templates for high performance, thin-film supercapacitor electrodes

NASA Astrophysics Data System (ADS)

Shi, HaoTian Harvey; Naguib, Hani E.

2016-04-01

Flexible Thin-film Electrochemical Capacitors (ECs) are emerging technology that plays an important role as energy supply for various electronics system for both present era and the future. Intrinsically conductive polymers (ICPs) are promising pseudo-capacitive materials as they feature both good electrical conductivity and high specific capacitance. This study focuses on the construction and characterization of ultra-high surface area porous electrodes based on coating of nano-sized conductive polymer materials on nylon membrane templates. Herein, a novel nano-engineered electrode material based on nylon membranes was presented, which allows the creation of super-capacitor devices that is capable of delivering competitive performance, while maintaining desirable mechanical characteristics. With the formation of a highly conductive network with the polyaniline nano-layer, the electrical conductivity was also increased dramatically to facilitate the charge transfer process. Cyclic voltammetry and specific capacitance results showed promising application of this type of composite materials for future smart textile applications.

Organic Optoelectronic Devices Employing Small Molecules

NASA Astrophysics Data System (ADS)

Fleetham, Tyler Blain

Organic optoelectronic devices have remained a research topic of great interest over the past two decades, particularly in the development of efficient organic photovoltaics (OPV) and organic light emitting diodes (OLED). In order to improve the efficiency, stability, and materials variety for organic optoelectronic devices a number of emitting materials, absorbing materials, and charge transport materials were developed and employed in a device setting. Optical, electrical, and photophysical studies of the organic materials and their corresponding devices were thoroughly carried out. Two major approaches were taken to enhance the efficiency of small molecule based OPVs: developing material with higher open circuit voltages or improved device structures which increased short circuit current. To explore the factors affecting the open circuit voltage (VOC) in OPVs, molecular structures were modified to bring VOC closer to the effective bandgap, DeltaE DA, which allowed the achievement of 1V VOC for a heterojunction of a select Ir complex with estimated exciton energy of only 1.55eV. Furthermore, the development of anode interfacial layer for exciton blocking and molecular templating provide a general approach for enhancing the short circuit current. Ultimately, a 5.8% PCE was achieved in a single heterojunction of C60 and a ZnPc material prepared in a simple, one step, solvent free, synthesis. OLEDs employing newly developed deep blue emitters based on cyclometalated complexes were demonstrated. Ultimately, a peak EQE of 24.8% and nearly perfect blue emission of (0.148,0.079) was achieved from PtON7dtb, which approaches the maximum attainable performance from a blue OLED. Furthermore, utilizing the excimer formation properties of square-planar Pt complexes, highly efficient and stable white devices employing a single emissive material were demonstrated. A peak EQE of over 20% for pure white color (0.33,0.33) and 80 CRI was achieved with the tridentate Pt complex, Pt-16. Furthermore, the development of a series of tetradentate Pt complexes yielded highly efficient and stable single doped white devices due to their halogen free tetradentate design. In addition to these benchmark achievements, the systematic molecular modification of both emissive and absorbing materials provides valuable structure-property relationship information that should help guide further developments in the field.

High Efficiency, Illumination Quality OLEDs for Lighting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joseph Shiang; James Cella; Kelly Chichak

The goal of the program was to demonstrate a 45 lumen per watt white light device based upon the use of multiple emission colors through the use of solution processing. This performance level is a dramatic extension of the team's previous 15 LPW large area illumination device. The fundamental material system was based upon commercial polymer materials. The team was largely able to achieve these goals, and was able to deliver to DOE a 90 lumen illumination source that had an average performance of 34 LPW a 1000 cd/m{sup 2} with peak performances near 40LPW. The average color temperature ismore » 3200K and the calculated CRI 85. The device operated at a brightness of approximately 1000cd/m{sup 2}. The use of multiple emission colors particularly red and blue, provided additional degrees of design flexibility in achieving white light, but also required the use of a multilayered structure to separate the different recombination zones and prevent interconversion of blue emission to red emission. The use of commercial materials had the advantage that improvements by the chemical manufacturers in charge transport efficiency, operating life and material purity could be rapidly incorporated without the expenditure of additional effort. The program was designed to take maximum advantage of the known characteristics of these material and proceeded in seven steps. (1) Identify the most promising materials, (2) assemble them into multi-layer structures to control excitation and transport within the OLED, (3) identify materials development needs that would optimize performance within multilayer structures, (4) build a prototype that demonstrates the potential entitlement of the novel multilayer OLED architecture (5) integrate all of the developments to find the single best materials set to implement the novel multilayer architecture, (6) further optimize the best materials set, (7) make a large area high illumination quality white OLED. A photo of the final deliverable is shown. In 2003, a large area, OLED based illumination source was demonstrated that could provide light with a quality, quantity, and efficiency on par with what can be achieved with traditional light sources. The demonstration source was made by tiling together 16 separate 6-inch x 6-inch blue-emitting OLEDs. The efficiency, total lumen output, and lifetime of the OLED based illumination source were the same as what would be achieved with an 80 watt incandescent bulb. The devices had an average efficacy of 15 LPW and used solution-processed OLEDs. The individual 6-inch x 6-inch devices incorporated three technology strategies developed specifically for OLED lighting -- downconversion for white light generation, scattering for outcoupling efficiency enhancement, and a scalable monolithic series architecture to enable large area devices. The downconversion approach consists of optically coupling a blue-emitting OLED to a set of luminescent layers. The layers are chosen to absorb the blue OLED emission and then luminescence with high efficiency at longer wavelengths. The composition and number of layers are chosen so that the unabsorbed blue emission and the longer wavelength re-emission combine to make white light. A downconversion approach has the advantage of allowing a wide variety of colors to be made from a limited set of blue emitters. In addition, one does not have to carefully tune the emission wavelength of the individual electro-luminescent species within the OLED device in order to achieve white light. The downconversion architecture used to develop the 15LPW large area light source consisted of a polymer-based blue-emitting OLED and three downconversion layers. Two of the layers utilized perylene based dyes from BASF AG of Germany with high quantum efficiency (>98%) and one of the layers consisted of inorganic phosphor particles (Y(Gd)AG:Ce) with a quantum efficiency of {approx}85%. By independently varying the optical density of the downconversion layers, the overall emission spectrum could be adjusted to maximize performance for lighting (e.g. blackbody temperature, color rendering and luminous efficacy) while keeping the properties of the underlying blue OLED constant. The success of the downconversion approach is ultimately based upon the ability to produce efficient emission in the blue. Table 1 presents a comparison of the current performance of the conjugated polymer, dye-doped polymer, and dendrimer approaches to making a solution-processed blue OLED as 2006. Also given is the published state of the art performance of a vapor-deposited blue OLED. One can see that all the approaches to a blue OLED give approximately the same external quantum efficiency at 500 cd/m{sup 2}. However, due to its low operating voltage, the fluorescent conjugated polymer approach yields a superior power efficiency at the same brightness.« less

Recent Progress in Iron-Based Electrode Materials for Grid-Scale Sodium-Ion Batteries.

PubMed

Fang, Yongjin; Chen, Zhongxue; Xiao, Lifen; Ai, Xinping; Cao, Yuliang; Yang, Hanxi

2018-03-01

Grid-scale energy storage batteries with electrode materials made from low-cost, earth-abundant elements are needed to meet the requirements of sustainable energy systems. Sodium-ion batteries (SIBs) with iron-based electrodes offer an attractive combination of low cost, plentiful structural diversity and high stability, making them ideal candidates for grid-scale energy storage systems. Although various iron-based cathode and anode materials have been synthesized and evaluated for sodium storage, further improvements are still required in terms of energy/power density and long cyclic stability for commercialization. In this Review, progress in iron-based electrode materials for SIBs, including oxides, polyanions, ferrocyanides, and sulfides, is briefly summarized. In addition, the reaction mechanisms, electrochemical performance enhancements, structure-composition-performance relationships, merits and drawbacks of iron-based electrode materials for SIBs are discussed. Such iron-based electrode materials will be competitive and attractive electrodes for next-generation energy storage devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multifunctional tunneling devices based on graphene/h-BN/MoSe2 van der Waals heterostructures

NASA Astrophysics Data System (ADS)

Cheng, Ruiqing; Wang, Feng; Yin, Lei; Xu, Kai; Ahmed Shifa, Tofik; Wen, Yao; Zhan, Xueying; Li, Jie; Jiang, Chao; Wang, Zhenxing; He, Jun

2017-04-01

The vertically stacked devices based on van der Waals heterostructures (vdWHs) of two-dimensional layered materials (2DLMs) have attracted considerable attention due to their superb properties. As a typical structure, graphene/hexagonal boron nitride (h-BN)/graphene vdWH has been proved possible to make tunneling devices. Compared with graphene, transition metal dichalcogenides possess intrinsic bandgap, leading to high performance of electronic devices. Here, tunneling devices based on graphene/h-BN/MoSe2 vdWHs are designed for multiple functions. On the one hand, the device shows a typical tunneling field-effect transistor behavior. A high on/off ratio of tunneling current (5 × 103) and an ultrahigh current rectification ratio (7 × 105) are achieved, which are attributed to relatively small electronic affinity of MoSe2 and optimized thickness of h-BN. On the other hand, the same structure also realizes 2D non-volatile memory with a high program/erase current ratio (>105), large memory window (˜150 V from ±90 V), and good retention characteristic. These results could enhance the fundamental understanding of tunneling behavior in vdWHs and contribute to the design of ultrathin rectifiers and memory based on 2DLMs.

Mechanical Energy Harvesting Performance of Ferroelectric Polymer Nanowires Grown via Template‐Wetting

PubMed Central

Whiter, Richard A.; Boughey, Chess; Smith, Michael

2018-01-01

Abstract Nanowires of the ferroelectric co‐polymer poly(vinylidenefluoride‐co‐triufloroethylene) [P(VDF‐TrFE)] are fabricated from solution within nanoporous templates of both “hard” anodic aluminium oxide (AAO) and “soft” polyimide (PI) through a facile and scalable template‐wetting process. The confined geometry afforded by the pores of the templates leads directly to highly crystalline P(VDF‐TrFE) nanowires in a macroscopic “poled” state that precludes the need for external electrical poling procedure typically required for piezoelectric performance. The energy‐harvesting performance of nanogenerators based on these template‐grown nanowires are extensively studied and analyzed in combination with finite element modelling. Both experimental results and computational models probing the role of the templates in determining overall nanogenerator performance, including both materials and device efficiencies, are presented. It is found that although P(VDF‐TrFE) nanowires grown in PI templates exhibit a lower material efficiency due to lower crystallinity as compared to nanowires grown in AAO templates, the overall device efficiency was higher for the PI‐template‐based nanogenerator because of the lower stiffness of the PI template as compared to the AAO template. This work provides a clear framework to assess the energy conversion efficiency of template‐grown piezoelectric nanowires and paves the way towards optimization of template‐based nanogenerator devices.

Large-scale synthesis of high-quality hexagonal boron nitride nanosheets for large-area graphene electronics.

PubMed

Lee, Kang Hyuck; Shin, Hyeon-Jin; Lee, Jinyeong; Lee, In-yeal; Kim, Gil-Ho; Choi, Jae-Young; Kim, Sang-Woo

2012-02-08

Hexagonal boron nitride (h-BN) has received a great deal of attention as a substrate material for high-performance graphene electronics because it has an atomically smooth surface, lattice constant similar to that of graphene, large optical phonon modes, and a large electrical band gap. Herein, we report the large-scale synthesis of high-quality h-BN nanosheets in a chemical vapor deposition (CVD) process by controlling the surface morphologies of the copper (Cu) catalysts. It was found that morphology control of the Cu foil is much critical for the formation of the pure h-BN nanosheets as well as the improvement of their crystallinity. For the first time, we demonstrate the performance enhancement of CVD-based graphene devices with large-scale h-BN nanosheets. The mobility of the graphene device on the h-BN nanosheets was increased 3 times compared to that without the h-BN nanosheets. The on-off ratio of the drain current is 2 times higher than that of the graphene device without h-BN. This work suggests that high-quality h-BN nanosheets based on CVD are very promising for high-performance large-area graphene electronics. © 2012 American Chemical Society

Active Enhancement of Slow Light Based on Plasmon-Induced Transparency with Gain Materials.

PubMed

Zhang, Zhaojian; Yang, Junbo; He, Xin; Han, Yunxin; Zhang, Jingjing; Huang, Jie; Chen, Dingbo; Xu, Siyu

2018-06-03

As a plasmonic analogue of electromagnetically induced transparency (EIT), plasmon-induced transparency (PIT) has drawn more attention due to its potential of realizing on-chip sensing, slow light and nonlinear effect enhancement. However, the performance of a plasmonic system is always limited by the metal ohmic loss. Here, we numerically report a PIT system with gain materials based on plasmonic metal-insulator-metal waveguide. The corresponding phenomenon can be theoretically analyzed by coupled mode theory (CMT). After filling gain material into a disk cavity, the system intrinsic loss can be compensated by external pump beam, and the PIT can be greatly fueled to achieve a dramatic enhancement of slow light performance. Finally, a double-channel enhanced slow light is introduced by adding a second gain disk cavity. This work paves way for a potential new high-performance slow light device, which can have significant applications for high-compact plasmonic circuits and optical communication.

High-Performance Three-Stage Cascade Thermoelectric Devices with 20% Efficiency

NASA Astrophysics Data System (ADS)

Cook, B. A.; Chan, T. E.; Dezsi, G.; Thomas, P.; Koch, C. C.; Poon, J.; Tritt, T.; Venkatasubramanian, R.

2015-06-01

The use of advanced materials has resulted in a significant improvement in thermoelectric device conversion efficiency. Three-stage cascade devices were assembled, consisting of nano-bulk Bi2Te3-based materials on the cold side, PbTe and enhanced TAGS-85 [(AgSbTe2)15(GeTe)85] for the mid-stage, and half-Heusler alloys for the high-temperature top stage. In addition, an area aspect ratio optimization process was applied in order to account for asymmetric thermal transport down the individual n- and p-legs. The n- and p-type chalcogenide alloy materials were prepared by high-energy mechanical ball-milling and/or cryogenic ball-milling of elementary powders, with subsequent consolidation by high-pressure uniaxial hot-pressing. The low-temperature stage materials, nano-bulk Bi2Te3- x Sb x and Bi2Te3- x Se x , exhibit a unique mixture of nanoscale features that leads to an enhanced Seebeck coefficient and reduced lattice thermal conductivity, thereby achieving an average ZT of ~1.26 and ~1.7 in the 27°C to 100°C range for the n-type and p-type materials, respectively. Also, the addition of small amounts of selected rare earth elements has been shown to improve the ZT of TAGS-85 by 25%, compared with conventional or neat TAGS-85, resulting in a ZT = 1.5 at 400°C. The incorporation of these improved materials resulted in a peak device conversion efficiency of ~20% at a temperature difference of 750°C when corrected for radiation heat losses and thermal conduction losses through the lead wires. These high-efficiency results were shown to be reproducible across multiple cascade devices.

Bias sputtered NbN and superconducting nanowire devices

NASA Astrophysics Data System (ADS)

Dane, Andrew E.; McCaughan, Adam N.; Zhu, Di; Zhao, Qingyuan; Kim, Chung-Soo; Calandri, Niccolo; Agarwal, Akshay; Bellei, Francesco; Berggren, Karl K.

2017-09-01

Superconducting nanowire single photon detectors (SNSPDs) promise to combine near-unity quantum efficiency with >100 megacounts per second rates, picosecond timing jitter, and sensitivity ranging from x-ray to mid-infrared wavelengths. However, this promise is not yet fulfilled, as superior performance in all metrics is yet to be combined into one device. The highest single-pixel detection efficiency and the widest bias windows for saturated quantum efficiency have been achieved in SNSPDs based on amorphous materials, while the lowest timing jitter and highest counting rates were demonstrated in devices made from polycrystalline materials. Broadly speaking, the amorphous superconductors that have been used to make SNSPDs have higher resistivities and lower critical temperature (Tc) values than typical polycrystalline materials. Here, we demonstrate a method of preparing niobium nitride (NbN) that has lower-than-typical superconducting transition temperature and higher-than-typical resistivity. As we will show, NbN deposited onto unheated SiO2 has a low Tc and high resistivity but is too rough for fabricating unconstricted nanowires, and Tc is too low to yield SNSPDs that can operate well at liquid helium temperatures. By adding a 50 W RF bias to the substrate holder during sputtering, the Tc of the unheated NbN films was increased by up to 73%, and the roughness was substantially reduced. After optimizing the deposition for nitrogen flow rates, we obtained 5 nm thick NbN films with a Tc of 7.8 K and a resistivity of 253 μΩ cm. We used this bias sputtered room temperature NbN to fabricate SNSPDs. Measurements were performed at 2.5 K using 1550 nm light. Photon count rates appeared to saturate at bias currents approaching the critical current, indicating that the device's quantum efficiency was approaching unity. We measured a single-ended timing jitter of 38 ps. The optical coupling to these devices was not optimized; however, integration with front-side optical structures to improve absorption should be straightforward. This material preparation was further used to fabricate nanocryotrons and a large-area imager device, reported elsewhere. The simplicity of the preparation and promising device performance should enable future high-performance devices.

High-Bandgap Silicon Nanocrystal Solar Cells: Device Fabrication, Characterization, and Modeling

NASA Astrophysics Data System (ADS)

Löper, Philipp; Canino, Mariaconcetta; Schnabel, Manuel; Summonte, Caterina; Janz, Stefan; Zacharias, Margit

Silicon nanocrystals (Si NCs) embedded in Si-based dielectrics provide a Si-based high-bandgap material (1.7 eV) and enable the construction of crystalline Si tandem solar cells. This chapter focusses on Si NC embedded in silicon carbide, because silicon carbide offers electrical conduction through the matrix material. The material development is reviewed, and optical modeling is introduced as a powerful method to monitor the four material components, amorphous and crystalline silicon as well as amorphous and crystalline silicon carbide. In the second part of this chapter, recent device developments for the photovoltaic characterization of Si NCs are examined. The controlled growth of Si NCs involves high-temperature annealing which deteriorates the properties of any previously established selective contacts. A membrane-based device is presented to overcome these limitations. In this approach, the formation of both selective contacts is carried out after high-temperature annealing and is therefore not affected by the latter. We examine p-i-n solar cells with an intrinsic region made of Si NCs embedded in silicon carbide. Device failure due to damaged insulation layers is analyzed by light beam-induced current measurements. An optical model of the device is presented for improving the cell current. A characterization scheme for Si NC p-i-n solar cells is presented which aims at determining the fundamental transport and recombination properties, i.e., the effective mobility lifetime product, of the nanocrystal layer at device level. For this means, an illumination-dependent analysis of Si NC p-i-n solar cells is carried out within the framework of the constant field approximation. The analysis builds on an optical device model, which is used to assess the photogenerated current in each of the device layers. Illumination-dependent current-voltage curves are modelled with a voltage-dependent current collection function with only two free parameters, and excellent agreement is found between theory and experiment. An effective mobility lifetime product of 10-10 cm2/V is derived and confirmed independently from an alternative method. The procedure discussed in this chapter is proposed as a characterization scheme for further material development, providing an optimization parameter (the effective mobility lifetime product) relevant for the photovoltaic performance of Si NC films.

Theoretical study in carrier mobility of two-dimensional materials

NASA Astrophysics Data System (ADS)

Huang, R.

2017-09-01

Recently, the theoretical prediction on carrier mobility of two-dimensional (2D) materials has aroused wild attention. At present, there is still a large gap between the theoretical prediction and the device performance of the semiconductor based on the 2D layer semiconductor materials such as graphene. It is particularly important to theoretically design and screen the high-performance 2D layered semiconductor materials with suitable band gap and high carrier mobility. This paper introduces some 2D materials with fine properties and deduces the formula for mobility of the isotropic materials on the basis of the deformation potential theory and Fermic golden rule under acoustic phonon scattering conditions, and then discusses the carrier mobility of anisotropic materials with Dirac cones. We point out the misconceptions in the existing literature and discuss the correct ones.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Printz, Adam D.; Lipomi, Darren J., E-mail: dlipomi@ucsd.edu

The primary goal of the field concerned with organic semiconductors is to produce devices with performance approaching that of silicon electronics, but with the deformability—flexibility and stretchability—of conventional plastics. However, an inherent competition between deformability and charge transport has long been observed in these materials, and achieving the extreme (or even moderate) deformability implied by the word “plastic” concurrently with high charge transport may be elusive. This competition arises because the properties needed for high carrier mobilities—e.g., rigid chains in π-conjugated polymers and high degrees of crystallinity in the solid state—are antithetical to deformability. On the device scale, this competitionmore » can lead to low-performance yet mechanically robust devices, or high-performance devices that fail catastrophically (e.g., cracking, cohesive failure, and delamination) under strain. There are, however, some observations that contradict the notion of the mutual exclusivity of electronic and mechanical performances. These observations suggest that this problem may not be a fundamental trade-off, but rather an inconvenience that may be negotiated by a logical selection of materials and processing conditions. For example, the selection of the poly(3-alkylthiophene) with a critical side-chain length—poly(3-heptylthiophene) (n = 7)—marries the high deformability of poly(3-octylthiophene) (n = 8) with the high electronic performance (as manifested in photovoltaic efficiency) of poly(3-hexylthiophene) (n = 6). This review explores the relationship between deformability and charge transport in organic semiconductors. The principal conclusions are that reducing the competition between these two parameters is in fact possible, with two demonstrated routes being: (1) incorporation of softer, insulating material into a stiffer, semiconducting material and (2) increasing disorder in a highly ordered film, but not enough to disrupt charge transport pathways. The aim of this review is to provide a bridge between the fields interested in electronic properties and mechanical properties of conjugated polymers. We provide a high-level introduction to some of the important electronic and mechanical properties and measurement techniques for organic electronic devices, demonstrate an apparent competition between good electronic performance and mechanical deformability, and highlight potential strategies for overcoming this undesirable competition. A marriage of these two fields would allow for rational design of materials for applications requiring large-area, low-cost, printable devices that are ultra-flexible or stretchable, such as organic photovoltaic devices and wearable, conformable, or implantable sensors.« less

Lifetime laser damage performance of β -Ga2O3 for high power applications

NASA Astrophysics Data System (ADS)

Yoo, Jae-Hyuck; Rafique, Subrina; Lange, Andrew; Zhao, Hongping; Elhadj, Selim

2018-03-01

Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor with potential applications in power electronics and high power optical systems where gallium nitride and silicon carbide have already demonstrated unique advantages compared to gallium arsenide and silicon-based devices. Establishing the stability and breakdown conditions of these next-generation materials is critical to assessing their potential performance in devices subjected to large electric fields. Here, using systematic laser damage performance tests, we establish that β-Ga2O3 has the highest lifetime optical damage performance of any conductive material measured to date, above 10 J/cm2 (1.4 GW/cm2). This has direct implications for its use as an active component in high power laser systems and may give insight into its utility for high-power switching applications. Both heteroepitaxial and bulk β-Ga2O3 samples were benchmarked against a heteroepitaxial gallium nitride sample, revealing an order of magnitude higher optical lifetime damage threshold for β-Ga2O3. Photoluminescence and Raman spectroscopy results suggest that the exceptional damage performance of β-Ga2O3 is due to lower absorptive defect concentrations and reduced epitaxial stress.

Recent Progress of Textile-Based Wearable Electronics: A Comprehensive Review of Materials, Devices, and Applications.

PubMed

Heo, Jae Sang; Eom, Jimi; Kim, Yong-Hoon; Park, Sung Kyu

2018-01-01

Wearable electronics are emerging as a platform for next-generation, human-friendly, electronic devices. A new class of devices with various functionality and amenability for the human body is essential. These new conceptual devices are likely to be a set of various functional devices such as displays, sensors, batteries, etc., which have quite different working conditions, on or in the human body. In these aspects, electronic textiles seem to be a highly suitable possibility, due to the unique characteristics of textiles such as being light weight and flexible and their inherent warmth and the property to conform. Therefore, e-textiles have evolved into fiber-based electronic apparel or body attachable types in order to foster significant industrialization of the key components with adaptable formats. Although the advances are noteworthy, their electrical performance and device features are still unsatisfactory for consumer level e-textile systems. To solve these issues, innovative structural and material designs, and novel processing technologies have been introduced into e-textile systems. Recently reported and significantly developed functional materials and devices are summarized, including their enhanced optoelectrical and mechanical properties. Furthermore, the remaining challenges are discussed, and effective strategies to facilitate the full realization of e-textile systems are suggested. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Substrate effects in high gain, low operating voltage SnSe2 photoconductor

NASA Astrophysics Data System (ADS)

Krishna, Murali; Kallatt, Sangeeth; Majumdar, Kausik

2018-01-01

High gain photoconductive devices find wide spread applications in low intensity light detection. Ultra-thin layered materials have recently drawn a lot of attention from researchers in this regard. However, in general, a large operating voltage is required to obtain large responsivity in these devices. In addition, the characteristics are often confounded by substrate induced trap effects. Here we report multi-layer SnSe2 based photoconductive devices using two different structures: (1) SiO2 substrate supported inter-digitated electrode (IDE), and (2) suspended channel. The IDE device exhibits a responsivity of ≈ {10}3 A W-1 and ≈ 8.66× {10}4 A W-1 at operating voltages of 1 mV and 100 mV, respectively—a superior low voltage performance over existing literature on planar 2D structures. However, the responsivity reduces by more than two orders of magnitude, while the transient response improves for the suspended device—providing insights into the critical role played by the channel-substrate interface in the gain mechanism. The results, on one hand, are promising for highly sensitive photoconductive applications consuming ultra-low power, and on the other hand, show a generic methodology that could be applied to other layered material based photoconductive devices as well for extracting the intrinsic behavior.

Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Doan, T. C.; Li, J.; Lin, J. Y.

2016-07-15

Solid-state neutron detectors with high performance are highly sought after for the detection of fissile materials. However, direct-conversion neutron detectors based on semiconductors with a measureable efficiency have not been realized. We report here the first successful demonstration of a direct-conversion semiconductor neutron detector with an overall detection efficiency for thermal neutrons of 4% and a charge collection efficiency as high as 83%. The detector is based on a 2.7 μm thick {sup 10}B-enriched hexagonal boron nitride (h-BN) epitaxial layer. The results represent a significant step towards the realization of practical neutron detectors based on h-BN epilayers. Neutron detectors basedmore » on h-BN are expected to possess all the advantages of semiconductor devices including wafer-scale processing, compact size, light weight, and ability to integrate with other functional devices.« less

Multiscale Thermo-Mechanical Design and Analysis of High Frequency and High Power Vacuum Electron Devices

NASA Astrophysics Data System (ADS)

Gamzina, Diana

Diana Gamzina March 2016 Mechanical and Aerospace Engineering Multiscale Thermo-Mechanical Design and Analysis of High Frequency and High Power Vacuum Electron Devices Abstract A methodology for performing thermo-mechanical design and analysis of high frequency and high average power vacuum electron devices is presented. This methodology results in a "first-pass" engineering design directly ready for manufacturing. The methodology includes establishment of thermal and mechanical boundary conditions, evaluation of convective film heat transfer coefficients, identification of material options, evaluation of temperature and stress field distributions, assessment of microscale effects on the stress state of the material, and fatigue analysis. The feature size of vacuum electron devices operating in the high frequency regime of 100 GHz to 1 THz is comparable to the microstructure of the materials employed for their fabrication. As a result, the thermo-mechanical performance of a device is affected by the local material microstructure. Such multiscale effects on the stress state are considered in the range of scales from about 10 microns up to a few millimeters. The design and analysis methodology is demonstrated on three separate microwave devices: a 95 GHz 10 kW cw sheet beam klystron, a 263 GHz 50 W long pulse wide-bandwidth sheet beam travelling wave tube, and a 346 GHz 1 W cw backward wave oscillator.

Long-wavelength infrared (LWIR) quantum-dot infrared photodetector (QDIP) focal plane array

NASA Astrophysics Data System (ADS)

Gunapala, S. D.; Bandara, S. V.; Hill, C. J.; Ting, D. Z.; Liu, J. K.; Rafol, S. B.; Blazejewski, E. R.; Mumolo, J. M.; Keo, S. A.; Krishna, S.; Chang, Y. C.; Shott, C. A.

2006-05-01

We have exploited the artificial atomlike properties of epitaxially self-assembled quantum dots for the development of high operating temperature long wavelength infrared (LWIR) focal plane arrays. Quantum dots are nanometer-scale islands that form spontaneously on a semiconductor substrate due to lattice mismatch. QDIPs are expected to outperform quantum well infrared detectors (QWIPs) and are expected to offer significant advantages over II-VI material based focal plane arrays. QDIPs are fabricated using robust wide bandgap III-V materials which are well suited to the production of highly uniform LWIR arrays. We have used molecular beam epitaxy (MBE) technology to grow multi-layer LWIR quantum dot structures based on the InAs/InGaAs/GaAs material system. JPL is building on its significant QWIP experience and is basically building a Dot-in-the-Well (DWELL) device design by embedding InAs quantum dots in a QWIP structure. This hybrid quantum dot/quantum well device offers additional control in wavelength tuning via control of dot-size and/or quantum well sizes. In addition the quantum wells can trap electrons and aide in ground state refilling. Recent measurements have shown a 10 times higher photoconductive gain than the typical QWIP device, which indirectly confirms the lower relaxation rate of excited electrons (photon bottleneck) in QDIPs. Subsequent material and device improvements have demonstrated an absorption quantum efficiency (QE) of ~ 3%. Dot-in-the-well (DWELL) QDIPs were also experimentally shown to absorb both 45o and normally incident light. Thus we have employed a reflection grating structure to further enhance the quantum efficiency. JPL has demonstrated wavelength control by progressively growing material and fabricating devices structures that have continuously increased in LWIR response. The most recent devices exhibit peak responsivity out to 8.1 microns. Peak detectivity of the 8.1μm devices has reached ~ 1 x 1010 Jones at 77 K. Furthermore, we have fabricated the first long-wavelength 640x512 pixels QDIP focal plane array. This QDIP focal plane array has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60K operating temperature. In addition, we have managed to increase the quantum efficiency of these devices from 0.1% (according to the data published in literature) to 20% in discrete devices. This is a factor of 200 increase in quantum efficiency. With these excellent results, for the first time QDIP performance has surpassed the QWIP performance. Our goal is to operate these long-wavelength detectors at much higher operating temperature than 77K, which can be passively achieved in space. This will be a huge leap in high performance infrared detectors specifically applicable to space science instruments.

Long-Wavelength Infrared (LWIR) Quantum Dot Infrared Photodetector (QDIP) Focal Plane Array

NASA Technical Reports Server (NTRS)

Gunapala, Sarath D.; Bandara, S. V.; Liu, J. K.; Hill, C. J.; Rafol, S. B.; Mumolo, J. M.; Shott, C. A.

2006-01-01

We have exploited the artificial atomlike properties of epitaxially self-assembled quantum dots for the development of high operating temperature long wavelength infrared (LWIR) focal plane arrays. Quantum dots are nanometer-scale islands that form spontaneously on a semiconductor substrate due to lattice mismatch. QDIPs are expected to outperform quantum well infrared detectors (QWIPs) and are expected to offer significant advantages over II-VI material based focal plane arrays. QDIPs are fabricated using robust wide bandgap III-V materials which are well suited to the production of highly uniform LWIR arrays. We have used molecular beam epitaxy (MBE) technology to grow multi-layer LWIR quantum dot structures based on the InAs/InGaAs/GaAs material system. JPL is building on its significant QWIP experience and is basically building a Dot-in-the-Well (DWELL) device design by embedding InAs quantum dots in a QWIP structure. This hybrid quantum dot/quantum well device offers additional control in wavelength tuning via control of dot-size and/or quantum well sizes. In addition the quantum wells can trap electrons and aide in ground state refilling. Recent measurements have shown a 10 times higher photoconductive gain than the typical QWIP device, which indirectly confirms the lower relaxation rate of excited electrons (photon bottleneck) in QDPs. Subsequent material and device improvements have demonstrated an absorption quantum efficiency (QE) of approx. 3%. Dot-in-the-well (DWELL) QDIPs were also experimentally shown to absorb both 45 deg. and normally incident light. Thus we have employed a reflection grating structure to further enhance the quantum efficiency. JPL has demonstrated wavelength control by progressively growing material and fabricating devices structures that have continuously increased in LWIR response. The most recent devices exhibit peak responsivity out to 8.1 microns. Peak detectivity of the 8.1 micrometer devices has reached approx. 1 x 10(exp 10) Jones at 77 K. Furthermore, we have fabricated the first long-wavelength 640x512 pixels QDP focal plane array. This QDIP focal plane may has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60K operating temperature. In addition, we have managed to increase the quantum efficiency of these devices from 0.1% (according to the data published in literature) to 20% in discrete devices. This is a factor of 200 increase in quantum efficiency. With these excellent results, for the first time QDIP performance has surpassed the QWIP performance. Our goal is to operate these long-wavelength detectors at much higher operating temperature than 77K which can be passively achieved in space. This will be a huge leap in high performance infrared detectors specifically applicable to space science instruments.

Industrial perspectives on earth abundant, multinary thin film photovoltaics

NASA Astrophysics Data System (ADS)

Haight, Richard; Gershon, Talia; Gunawan, Oki; Antunez, Priscilla; Bishop, Douglas; Seog Lee, Yun; Gokmen, Tayfun; Sardashti, Kasra; Chagarov, Evgueni; Kummel, Andrew

2017-03-01

The most efficient earth abundant, non-toxic thin film multelemental PV devices are fabricated from Cu, Zn, Sn, S and Se, with the chemical formula of Cu2ZnSn(S x Se1-x )4 (CZTS,Se). This material has enjoyed relatively rapid increases in efficiency from its inception to its present-day power conversion efficiency of 12.6%. But further increases in efficiency have been hampered by the inability to substantially increase Voc, the open circuit voltage. In this review article we will discuss the fundamentals of this important kesterite material including methods of film growth, post growth processing and device fabrication. Detailed studies of the properties of CZTS,Se including chemical, structural and electronic as well as full device electrical characterization have been performed in an effort to coax out the critical issues that limit performance. These experimental studies, enhanced by density functional theory calculations have pointed to fundamental bulk point defects, such as Cu-Zn antisites, and clusters of defects, as the primary culprits in limiting Voc increases. Improvements in device performance through grain boundary passivation and interface modifications are described. Exfoliation of functioning solar cells to expose the back surface along with engineering of new back contacts designed to impose electrostatic fields that drive electron-hole separation and increase Voc are discussed. A parallel route to increasing device performance by alloying Ag with CZTS,Se in order to inhibit Cu-Zn antisite defect formation has shown significant improvement in material properties. Finally, applications of high S (and hence higher Voc) CZTS,Se based devices to energy harvesting for ‘Internet-of-Things’ devices is discussed.

Surface Conduction in III-V Semiconductor Infrared Detector Materials

NASA Astrophysics Data System (ADS)

Sidor, Daniel Evan

III-V semiconductors are increasingly used to produce high performance infrared photodetectors; however a significant challenge inherent to working with these materials is presented by unintended electrical conduction pathways that form along their surfaces. Resulting leakage currents contribute to system noise and are ineffectively mitigated by device cooling, and therefore limit ultimate performance. When the mechanism of surface conduction is understood, the unipolar barrier device architecture offers a potential solution. III-V bulk unipolar barrier detectors that effectively suppress surface leakage have approached the performance of the best II-VI pn-based structures. This thesis begins with a review of empirically determined Schottky barrier heights and uses this information to present a simple model of semiconductor surface conductivity. The model is validated through measurements of degenerate n-type surface conductivity on InAs pn junctions, and non-degenerate surface conductivity on GaSb pn junctions. It is then extended, along with design principles inspired by the InAs-based nBn detector, to create a flat-band pn-based unipolar barrier detector possessing a conductive surface but free of detrimental surface leakage current. Consideration is then given to the relative success of these and related bulk detectors in suppressing surface leakage when compared to analogous superlattice-based designs, and general limitations of unipolar barriers in suppressing surface leakage are proposed. Finally, refinements to the molecular beam epitaxy crystal growth techniques used to produce InAs-based unipolar barrier heterostructure devices are discussed. Improvements leading to III-V device performance well within an order of magnitude of the state-of-the-art are demonstrated.

Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11,000 cm(2)/V·s.

PubMed

Smith, Casey; Qaisi, Ramy; Liu, Zhihong; Yu, Qingkai; Hussain, Muhammad Mustafa

2013-07-23

Utilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) high-κ gate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11,000 cm(2)/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low tox/Wgraphene ratio, and scaled high-κ dielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance.

Inkjet printing of single-crystal films.

PubMed

Minemawari, Hiromi; Yamada, Toshikazu; Matsui, Hiroyuki; Tsutsumi, Jun'ya; Haas, Simon; Chiba, Ryosuke; Kumai, Reiji; Hasegawa, Tatsuo

2011-07-13

The use of single crystals has been fundamental to the development of semiconductor microelectronics and solid-state science. Whether based on inorganic or organic materials, the devices that show the highest performance rely on single-crystal interfaces, with their nearly perfect translational symmetry and exceptionally high chemical purity. Attention has recently been focused on developing simple ways of producing electronic devices by means of printing technologies. 'Printed electronics' is being explored for the manufacture of large-area and flexible electronic devices by the patterned application of functional inks containing soluble or dispersed semiconducting materials. However, because of the strong self-organizing tendency of the deposited materials, the production of semiconducting thin films of high crystallinity (indispensable for realizing high carrier mobility) may be incompatible with conventional printing processes. Here we develop a method that combines the technique of antisolvent crystallization with inkjet printing to produce organic semiconducting thin films of high crystallinity. Specifically, we show that mixing fine droplets of an antisolvent and a solution of an active semiconducting component within a confined area on an amorphous substrate can trigger the controlled formation of exceptionally uniform single-crystal or polycrystalline thin films that grow at the liquid-air interfaces. Using this approach, we have printed single crystals of the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C(8)-BTBT) (ref. 15), yielding thin-film transistors with average carrier mobilities as high as 16.4 cm(2) V(-1) s(-1). This printing technique constitutes a major step towards the use of high-performance single-crystal semiconductor devices for large-area and flexible electronics applications.

Lithium-based surfaces controlling fusion plasma behavior at the plasma-material interfacea)

NASA Astrophysics Data System (ADS)

Allain, Jean Paul; Taylor, Chase N.

2012-05-01

The plasma-material interface and its impact on the performance of magnetically confined thermonuclear fusion plasmas are considered to be one of the key scientific gaps in the realization of nuclear fusion power. At this interface, high particle and heat flux from the fusion plasma can limit the material's lifetime and reliability and therefore hinder operation of the fusion device. Lithium-based surfaces are now being used in major magnetic confinement fusion devices and have observed profound effects on plasma performance including enhanced confinement, suppression and control of edge localized modes (ELM), lower hydrogen recycling and impurity suppression. The critical spatial scale length of deuterium and helium particle interactions in lithium ranges between 5-100 nm depending on the incident particle energies at the edge and magnetic configuration. Lithium-based surfaces also range from liquid state to solid lithium coatings on a variety of substrates (e.g., graphite, stainless steel, refractory metal W/Mo/etc., or porous metal structures). Temperature-dependent effects from lithium-based surfaces as plasma facing components (PFC) include magnetohydrodynamic (MHD) instability issues related to liquid lithium, surface impurity, and deuterium retention issues, and anomalous physical sputtering increase at temperatures above lithium's melting point. The paper discusses the viability of lithium-based surfaces in future burning-plasma environments such as those found in ITER and DEMO-like fusion reactor devices.

Status and Progress of High-efficiency Silicon Solar Cells

NASA Astrophysics Data System (ADS)

Xiao, Shaoqing; Xu, Shuyan

High-efficiency Si solar cells have attracted more and more attention from researchers, scientists, engineers of photovoltaic (PV) industry for the past few decades. Many high-quality researchers and engineers in both academia and industry seek solutions to improve the cell efficiency and reduce the cost. This desire has stimulated a growing number of major research and research infrastructure programmes, and a rapidly increasing number of publications in this filed. This chapter reviews materials, devices and physics of high-efficiency Si solar cells developed over the last 20 years. In this chapter there is a fair number of topics, not only from the material viewpoint, introducing various materials that are required for high-efficiency Si solar cells, such as base materials (FZ-Si, CZ-Si, MCZ-Si and multi-Si), emitter materials (diffused emitter and deposited emitter), passivation materials (Al-back surface field, high-low junction, SiO2, SiO x , SiN x , Al2O3 and a-Si:H), and other functional materials (antireflective layer, TCO and metal electrode), but also from the device and physics point of view, elaborating on physics, cell concept, development and status of all kinds of high-efficiency Si solar cells, such as passivated emitter and rear contact (PERC), passivated emitter and rear locally diffused (PERL), passivated emitter and rear totally diffused (PERT), Pluto, interdigitated back-contacted (IBC), emitter-wrap-through (EWT), metallization-wrap-through (MWT), Heterojunction with intrinsic thin-layer (HIT) and so on. Some representative examples of high-efficiency Si solar cell materials and devices with excellent performance and competitive advantages are presented.

Facile and gram-scale synthesis of metal-free catalysts: toward realistic applications for fuel cells.

PubMed

Kim, Ok-Hee; Cho, Yong-Hun; Chung, Dong Young; Kim, Min Jeong; Yoo, Ji Mun; Park, Ji Eun; Choe, Heeman; Sung, Yung-Eun

2015-03-02

Although numerous reports on nonprecious metal catalysts for replacing expensive Pt-based catalysts have been published, few of these studies have demonstrated their practical application in fuel cells. In this work, we report graphitic carbon nitride and carbon nanofiber hybrid materials synthesized by a facile and gram-scale method via liquid-based reactions, without the use of toxic materials or a high pressure-high temperature reactor, for use as fuel cell cathodes. The resulting materials exhibited remarkable methanol tolerance, selectivity, and stability even without a metal dopant. Furthermore, these completely metal-free catalysts exhibited outstanding performance as cathode materials in an actual fuel cell device: a membrane electrode assembly with both acidic and alkaline polymer electrolytes. The fabrication method and remarkable performance of the single cell produced in this study represent progressive steps toward the realistic application of metal-free cathode electrocatalysts in fuel cells.

Facile and Gram-scale Synthesis of Metal-free Catalysts: Toward Realistic Applications for Fuel Cells

PubMed Central

Kim, Ok-Hee; Cho, Yong-Hun; Chung, Dong Young; Kim, Min Jeong; Yoo, Ji Mun; Park, Ji Eun; Choe, Heeman; Sung, Yung-Eun

2015-01-01

Although numerous reports on nonprecious metal catalysts for replacing expensive Pt-based catalysts have been published, few of these studies have demonstrated their practical application in fuel cells. In this work, we report graphitic carbon nitride and carbon nanofiber hybrid materials synthesized by a facile and gram-scale method via liquid-based reactions, without the use of toxic materials or a high pressure-high temperature reactor, for use as fuel cell cathodes. The resulting materials exhibited remarkable methanol tolerance, selectivity, and stability even without a metal dopant. Furthermore, these completely metal-free catalysts exhibited outstanding performance as cathode materials in an actual fuel cell device: a membrane electrode assembly with both acidic and alkaline polymer electrolytes. The fabrication method and remarkable performance of the single cell produced in this study represent progressive steps toward the realistic application of metal-free cathode electrocatalysts in fuel cells. PMID:25728910

Properties of radiation stable insulation composites for fusion magnet

NASA Astrophysics Data System (ADS)

Wu, Zhixiong; Huang, Rongjin; Huang, Chuanjun; Li, Laifeng

2017-09-01

High field superconducting magnets made of Nb3Al will be a suitable candidate for future fusion device which can provide magnetic field over 15T without critical current degradation caused by strain. The higher magnetic field and the larger current will produce a huge electromagnetic force. Therefore, it is necessary to develop high strength cryogenic structural materials and electrical insulation materials with excellent performance. On the other hand, superconducting magnets in fusion devices will experience significant nuclear radiation exposure during service. While typical structural materials like stainless steel and titanium have proven their ability to withstand these conditions, electrical insulation materials used in these coils have not fared as well. In fact, recent investigations have shown that electrical insulation breakdown is a limiting factor in the performance of high field magnets. The insulation materials used in the high field fusion magnets should be characterized by excellent mechanical properties, high radiation resistivity and good thermal conductivity. To meet these objectives, we designed various insulation materials based on epoxy resins and cyanate ester resins and investigated their processing characteristic and mechanical properties before and after irradiation at low temperature. In this paper, the recent progress of the radiation stable insulation composites for high field fusion magnet is presented. The materials have been irradiated by 60Co γ-ray irradiation in air at ambient temperature with a dose rate of 300 Gy/min. The total doses of 1 MGy, 5 MGy and 10 MGy were selected to the test specimens.

High-Performance Phototransistors Based on PDIF-CN2 Solution-Processed Single Fiber and Multifiber Assembly.

PubMed

Rekab, Wassima; Stoeckel, Marc-Antoine; El Gemayel, Mirella; Gobbi, Marco; Orgiu, Emanuele; Samorì, Paolo

2016-04-20

Here we describe the fabrication of organic phototransistors based on either single or multifibers integrated in three-terminal devices. These self-assembled fibers have been produced by solvent-induced precipitation of an air stable and solution-processable perylene di-imide derivative, i.e., PDIF-CN2. The optoelectronic properties of these devices were compared to devices incorporating more disordered spin-coated PDIF-CN2 thin-films. The single-fiber devices revealed significantly higher field-effect mobilities, compared to multifiber and thin-films, exceeding 2 cm(2) V(-1) s(-1). Such an efficient charge transport is the result of strong intermolecular coupling between closely packed PDIF-CN2 molecules and of a low density of structural defects. The improved crystallinity allows efficient collection of photogenerated Frenkel excitons, which results in the highest reported responsivity (R) for single-fiber PDI-based phototransistors, and photosensitivity (P) exceeding 2 × 10(3) AW(-1), and 5 × 10(3), respectively. These findings provide unambiguous evidence for the key role played by the high degree of order at the supramolecular level to leverage the material's properties toward the fabrication of light-sensitive organic field-effect transistors combining a good operational stability, high responsivity and photosensitivity. Our results show also that the air-stability performances are superior in devices where highly crystalline supramolecularly engineered architectures serve as the active layer.

Template-free synthesis of renewable macroporous carbon via yeast cells for high-performance supercapacitor electrode materials.

PubMed

Sun, Hongmei; He, Wenhui; Zong, Chenghua; Lu, Lehui

2013-03-01

The urgent need for sustainable development has forced material scientists to explore novel materials for next-generation energy storage devices through a green and facile strategy. In this context, yeast, which is a large group of single cell fungi widely distributed in nature environments, will be an ideal candidate for developing effective electrode materials with fascinating structures for high-performance supercapacitors. With this in mind, herein, we present the first example of creating three-dimensional (3D) interpenetrating macroporous carbon materials via a template-free method, using the green, renewable, and widespread yeast cells as the precursors. Remarkably, when the as-prepared materials are used as the electrode materials for supercapacitors, they exhibit outstanding performance with high specific capacitance of 330 F g(-1) at a current density of 1 A g(-1), and good stability, even after 1000 charge/discharge cycles. The approach developed in this work provides a new view of making full use of sustainable resources endowed by nature, opening the avenue to designing and producing robust materials with great promising applications in high-performance energy-storage devices.

High efficiency photovoltaic device

DOEpatents

Guha, Subhendu; Yang, Chi C.; Xu, Xi Xiang

1999-11-02

An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.

Lead-Free Hybrid Perovskite Absorbers for Viable Application: Can We Eat the Cake and Have It too?

PubMed

Liang, Lusheng; Gao, Peng

2018-02-01

Many years since the booming of research on perovskite solar cells (PSCs), the hybrid perovskite materials developed for photovoltaic application form three main categories since 2009: (i) high-performance unstable lead-containing perovskites, (ii) low-performance lead-free perovskites, and (iii) moderate performance and stable lead-containing perovskites. The search for alternative materials to replace lead leads to the second group of perovskite materials. To date, a number of these compounds have been synthesized and applied in photovoltaic devices. Here, lead-free hybrid light absorbers used in PV devices are focused and their recent developments in related solar cell applications are reviewed comprehensively. In the first part, group 14 metals (Sn and Ge)-based perovskites are introduced with more emphasis on the optimization of Sn-based PSCs. Then concerns on halide hybrids of group 15 metals (Bi and Sb) are raised, which are mainly perovskite derivatives. At the same time, transition metal Cu-based perovskites are also referred. In the end, an outlook is given on the design strategy of lead-free halide hybrid absorbers for photovoltaic applications. It is believed that this timely review can represent our unique view of the field and shed some light on the direction of development of such promising materials.

FAST TRACK COMMUNICATION Host-free, yellow phosphorescent material in white organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Lee, Meng-Ting; Chu, Miao-Tsai; Lin, Jin-Sheng; Tseng, Mei-Rurng

2010-11-01

A white organic light-emitting diode (WOLED) with a high power efficiency has been demonstrated by dispersing a host-free, yellow phosphorescent material in between double blue phosphorescent emitters. The device performance achieved a comparable value to that of using a complicated host-guest doping system to form the yellow emitter in WOLEDs. Based on this device concept as well as the molecular engineering of blue phosphorescent host material and light-extraction film, a WOLED with a power efficiency of 65 lm W-1 at a practical brightness of 1000 cd m-2 with Commission Internationale d'Echariage coordinates (CIEx,y) of (0.37, 0.47) was achieved.

Elastic Fiber Supercapacitors for Wearable Energy Storage.

PubMed

Qin, Si; Seyedin, Shayan; Zhang, Jizhen; Wang, Zhiyu; Yang, Fangli; Liu, Yuqing; Chen, Jun; Razal, Joselito M

2018-05-17

The development of wearable devices such as smart watches, intelligent garments, and wearable health-monitoring devices calls for suitable energy storage devices which have matching mechanical properties and can provide sufficient power for a reasonable duration. Stretchable fiber-based supercapacitors are emerging as a promising candidates for this purpose because they are lightweight, flexible, have high energy and power density, and the potential for easy integration into traditional textile processes. An important characteristic that is oftentimes ignored is stretchability-fiber supercapacitors should be able to accommodate large elongation during use, endure a range of bending motions, and then revert to its original form without compromising electrical and electrochemical performance. This article summarizes the current research progress on stretchable fiber-based supercapacitors and discusses the existing challenges on material preparation and fiber-based device fabrication. This article aims to help researchers in the field to better understand the challenges related to material design and fabrication approaches of fiber-based supercapacitors, and to provide insights and guidelines toward their wearability. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synthetic thermoelectric materials comprising phononic crystals

DOEpatents

El-Kady, Ihab F; Olsson, Roy H; Hopkins, Patrick; Reinke, Charles; Kim, Bongsang

2013-08-13

Synthetic thermoelectric materials comprising phononic crystals can simultaneously have a large Seebeck coefficient, high electrical conductivity, and low thermal conductivity. Such synthetic thermoelectric materials can enable improved thermoelectric devices, such as thermoelectric generators and coolers, with improved performance. Such synthetic thermoelectric materials and devices can be fabricated using techniques that are compatible with standard microelectronics.

An improved method for characterizing photoresist lithographic and defectivity performance for sub-20nm node lithography

NASA Astrophysics Data System (ADS)

Amblard, Gilles; Purdy, Sara; Cooper, Ryan; Hockaday, Marjory

2016-03-01

The overall quality and processing capability of lithographic materials are critical for ensuring high device yield and performance at sub-20nm technology nodes in a high volume manufacturing environment. Insufficient process margin and high line width roughness (LWR) cause poor manufacturing control, while high defectivity causes product failures. In this paper, we focus on the most critical layer of a sub-20nm technology node LSI device, and present an improved method for characterizing both lithographic and post-patterning defectivity performance of state-of-the-art immersion photoresists. Multiple formulations from different suppliers were used and compared. Photoresists were tested under various process conditions, and multiple lithographic metrics were investigated (depth of focus, exposure dose latitude, line width roughness, etc.). Results were analyzed and combined using an innovative approach based on advanced software, providing clearer results than previously available. This increased detail enables more accurate performance comparisons among the different photoresists. Post-patterning defectivity was also quantified, with defects reviewed and classified using state-of-the-art inspection tools. Correlations were established between the lithographic and post-patterning defectivity performances for each material, and overall ranking was established among the photoresists, enabling the selection of the best performer for implementation in a high volume manufacturing environment.

Theoretical design and material growth of Type-II Antimonide-based superlattices for multi-spectral infrared detection and imaging

NASA Astrophysics Data System (ADS)

Hoang, Anh Minh

Infrared detectors find applications in many aspects of life, from night vision, target tracking for homeland security and defense, non-destructive failure detection in industry, chemical sensing in medicine, and free-space communication. Currently, the dominant technologies of photodetectors based upon HgCdTe and InSb are experiencing many limitations. Under this circumstance, the Type-II InAs/GaSb/AlSb superlattices which have been intensively studied recently appear to be an excellent candidate to give breakthroughs in the infrared technology. The Type-II SLs with theirs advantages such as great flexibility in bandgap engineering, high carrier effective mass, Auger recombination suppression and high uniformity have shown excellent device performance from MWIR to VLWIR. In the era of the third generation for infrared cameras, Type-II SLs are entering the new phase of development with high performance and multi-spectral detection. The goal of this work is to investigate quantum properties of the superlattice system, design appropriate device architectures and experimentally fabricate infrared detectors which can push further the limit of this material system and outperform existing competing technologies. The binary-binary InAs/GaSb superlattice has gone through much transformation over the years. Incorporating compounds lattice matched to the 6.1A family has invited more possibilities to band engineer the Type-II SLs. For the first time, by employing all three members of this material system, we have designed a new superlattice structure and demonstrated shortwavelength infrared (SWIR) photodiodes based on Type-II InAs/GaSb/AlSb with high electrical and optical performance. The photodiodes exhibited a quantum efficiency of 60% with very low dark current, can be operated at room temperature. In addition to the range of MWIR to VLWIR, a new channel of detection has been added to the GaSb based type-II SL material system. The new realization of SWIR photodiodes has led to the possibility of incorporating this channel to the multi-spectral detection. By combining with the MWIR channel, dual-band SWIR-MWIR photodiodes and focal plane arrays have been demonstrated, giving the capability of delivering both active and passive imaging in one single camera. Dual-band SWIR-MWIR photodiodes with quantum efficiency more than 50% for each channel has been achieved. Just like visible imaging, besides the available dual-band detection, the prospect of incorporating the third infrared waveband detection is very promising for a wide range of applications. However, the challenges for making such devices are so many that little success has been achieved. In the work, we also propose a new approach in device design to realize bias-selectable three-color shortwave-midwave-longwave infrared photodetector based on InAs/GaSb/AlSb type-II superlattice. The effect of conduction band off-set and different doping levels between two absorption layers are employed to control the turn-on voltage for individual channels. For the first time, we demonstrate experimentally Type-II superlattice based three-color photodiodes without using additional terminal contacts. As the applied bias voltage varies, the photodiodes exhibit sequentially the behavior of three different colors, corresponding to the bandgap of three absorbers. Well defined cut-offs and high quantum efficiency in each channel are achieved. While retaining the simplicity in device fabrication, this demonstration opens the new prospect for three-color infrared imaging. Finally, for further improvement, we are looking toward new type-II material called InAs/InAsSb superlattices. Theoretical design and growth techniques have been developed to investigate the properties of this material. We successfully demonstrated the design and growth of MWIR to VLWIR photodiodes based on Type-II InAs/InAsSb with high performance. Given the fact that these two Type-II material systems share the same GaSb substrate, a new incorporation could further fully exploit their advantages in the near future. Theoretical design, growth and optimization of device performance in each work are discussed.

Nanoscale control of the network morphology of high efficiency polymer fullerene solar cells by the use of high material concentration in the liquid phase

NASA Astrophysics Data System (ADS)

Radbeh, R.; Parbaile, E.; Bouclé, J.; Di Bin, C.; Moliton, A.; Coudert, V.; Rossignol, F.; Ratier, B.

2010-01-01

Despite the constant improvement of their power conversion efficiencies, organic solar cells based on an interpenetrating network of a conjugated polymer as donor and fullerene derivatives as acceptor materials still need to be improved for commercial use. In this context, we present a study on the optimization of solar cells based on poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) by varying a specific cell parameter, namely the concentration of the active layer components in the liquid phase before blend film deposition, in order to improve device performance and to better understand the relation between morphology and device operation. Our study shows a significant increase of the short-circuit current, open-circuit voltage and cell efficiency by properly choosing the formulation of the initial blend before film deposition. We demonstrate that the active layer morphology, which is strongly dependent on the initial material concentrations and the processing conditions, can greatly impact the electronic characteristics of the device, especially regarding charge recombination dynamics at the donor-acceptor interface. Our optimized P3HT:PCBM device exhibits both slow recombination and high photocurrent generation associated with an overall power conversion efficiency of 4.25% under 100 mW cm-2 illumination (AM1.5G).

Vapor Grown Perovskite Solar Cells

NASA Astrophysics Data System (ADS)

Abdussamad Abbas, Hisham

Perovskite solar cells has been the fastest growing solar cell material till date with verified efficiencies of over 22%. Most groups in the world focuses their research on solution based devices that has residual solvent in the material bulk. This work focuses extensively on the fabrication and properties of vapor based perovskite devices that is devoid of solvents. The initial part of my work focuses on the detailed fabrication of high efficiency consistent sequential vapor NIP devices made using P3HT as P-type Type II heterojunction. The sequential vapor devices experiences device anomalies like voltage evolution and IV hysteresis owing to charge trapping in TiO2. Hence, sequential PIN devices were fabricated using doped Type-II heterojunctions that had no device anomalies. The sequential PIN devices has processing restriction, as organic Type-II heterojunction materials cannot withstand high processing temperature, hence limiting device efficiency. Thereby bringing the need of co-evaporation for fabricating high efficiency consistent PIN devices, the approach has no-restriction on substrates and offers stoichiometric control. A comprehensive description of the fabrication, Co-evaporator setup and how to build it is described. The results of Co-evaporated devices clearly show that grain size, stoichiometry and doped transport layers are all critical for eliminating device anomalies and in fabricating high efficiency devices. Finally, Formamidinium based perovskite were fabricated using sequential approach. A thermal degradation study was conducted on Methyl Ammonium Vs. Formamidinium based perovskite films, Formamidinium based perovskites were found to be more stable. Lastly, inorganic films such as CdS and Nickel oxide were developed in this work.

A Novel Graphene-Polysulfide Anode Material for High-Performance Lithium-Ion Batteries

PubMed Central

Ai, Wei; Xie, Linghai; Du, Zhuzhu; Zeng, Zhiyuan; Liu, Juqing; Zhang, Hua; Huang, Yunhui; Huang, Wei; Yu, Ting

2013-01-01

We report a simple and efficient approach for fabrication of novel graphene-polysulfide (GPS) anode materials, which consists of conducting graphene network and homogeneously distributed polysulfide in between and chemically bonded with graphene sheets. Such unique architecture not only possesses fast electron transport channels, shortens the Li-ion diffusion length but also provides very efficient Li-ion reservoirs. As a consequence, the GPS materials exhibit an ultrahigh reversible capacity, excellent rate capability and superior long-term cycling performance in terms of 1600, 550, 380 mAh g−1 after 500, 1300, 1900 cycles with a rate of 1, 5 and 10 A g−1 respectively. This novel and simple strategy is believed to work broadly for other carbon-based materials. Additionally, the competitive cost and low environment impact may promise such materials and technique a promising future for the development of high-performance energy storage devices for diverse applications. PMID:23903017

Stacking multiple connecting functional materials in tandem organic light-emitting diodes

PubMed Central

Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

2017-01-01

Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency. PMID:28225028

Stacking multiple connecting functional materials in tandem organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

2017-02-01

Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency.

Achieving Optimal Self-Adaptivity for Dynamic Tuning of Organic Semiconductors through Resonance Engineering.

PubMed

Tao, Ye; Xu, Lijia; Zhang, Zhen; Chen, Runfeng; Li, Huanhuan; Xu, Hui; Zheng, Chao; Huang, Wei

2016-08-03

Current static-state explorations of organic semiconductors for optimal material properties and device performance are hindered by limited insights into the dynamically changed molecular states and charge transport and energy transfer processes upon device operation. Here, we propose a simple yet successful strategy, resonance variation-based dynamic adaptation (RVDA), to realize optimized self-adaptive properties in donor-resonance-acceptor molecules by engineering the resonance variation for dynamic tuning of organic semiconductors. Organic light-emitting diodes hosted by these RVDA materials exhibit remarkably high performance, with external quantum efficiencies up to 21.7% and favorable device stability. Our approach, which supports simultaneous realization of dynamically adapted and selectively enhanced properties via resonance engineering, illustrates a feasible design map for the preparation of smart organic semiconductors capable of dynamic structure and property modulations, promoting the studies of organic electronics from static to dynamic.

The Role of Charge Balance and Excited State Levels on Device Performance of Exciplex-based Phosphorescent Organic Light Emitting Diodes.

PubMed

Lee, Sangyeob; Koo, Hyun; Kwon, Ohyun; Jae Park, Young; Choi, Hyeonho; Lee, Kwan; Ahn, Byungmin; Min Park, Young

2017-09-20

The design of novel exciplex-forming co-host materials provides new opportunities to achieve high device performance of organic light emitting diodes (OLEDs), including high efficiency, low driving voltage and low efficiency roll-off. Here, we report a comprehensive study of exciplex-forming co-host system in OLEDs including the change of co-host materials, mixing composition of exciplex in the device to improve the performance. We investigate various exciplex systems using 5-(3-4,6-diphenyl-1,3,5-triazin-2-yl)phenyl-3,9-diphenyl-9H-carbazole, 5-(3-4,6-diphenyl-1,3,5-triazin-2-yl)phenyl)-9-phenyl-9H-3,9'-bicarbazole, and 2-(3-(6,9-diphenyl-9H-carbazol-4-yl)phenyl)-4-phenylbenzo[4,5]thieno[3,2-d]pyrimidine, as electron transporting (ET: electron acceptor) hosts and 9,9'-dipenyl-9H, 9'H-3,3'-bicarbazole and 9-([1,1'-biphenyl]-4-yl)-9'-phenyl-9H,9'H-3,3'-bicarbazole as hole transporting (HT: electron donor) hosts. As a result, a very high current efficiency of 105.1 cd/A at 10 3  cd/m 2 and an extremely long device lifetime of 739 hrs (t 95 : time after 5% decrease of luminance) are achieved which is one of the best performance in OLEDs. Systematic approach, controlling mixing ratio of HT to ET host materials is suggested to select the component of two host system using energy band matching and charge balance optimization method. Furthermore, our analysis on exciton stability also reveal that lifetime of OLEDs have close relationship with two parameters; singlet energy level difference of HT and ET host and difference of singlet and triplet energy level in exciplex.

Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application

NASA Astrophysics Data System (ADS)

Cho, Seongjae; Man Kang, In; Rok Kim, Kyung; Park, Byung-Gook; Harris, James S.

2013-11-01

In this work, Ge-based high-hole-mobility transistor with Si compatibility is designed, and its performance is evaluated. A 2-dimensional hole gas is effectively constructed by a AlGaAs/Ge/Si heterojunction with a sufficiently large valence band offset. Moreover, an intrinsic Ge channel is exploited so that high hole mobility is preserved without dopant scattering. Effects of design parameters such as gate length, Ge channel thickness, and aluminum fraction in the barrier material on device characteristics are thoroughly investigated through device simulations. A high on-current above 30 μA/μm along with a low subthreshold swing was obtained from an optimized planar device for low-power applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Nam-Gyu; Grätzel, Michael; Miyasaka, Tsutomu

Solar cells employing a halide perovskite with an organic cation now show power conversion efficiency of up to 22%. But, these cells are facing issues towards commercialization, such as the need to achieve long-term stability and the development of a manufacturing method for the reproducible fabrication of high-performance devices. We propose a strategy to obtain stable and commercially viable perovskite solar cells. A reproducible manufacturing method is suggested, as well as routes to manage grain boundaries and interfacial charge transport. Electroluminescence is regarded as a metric to gauge theoretical efficiency. We highlight how optimizing the design of device architectures ismore » important not only for achieving high efficiency but also for hysteresis-free and stable performance. Here, we argue that reliable device characterization is needed to ensure the advance of this technology towards practical applications. We believe that perovskite-based devices can be competitive with silicon solar modules, and discuss issues related to the safe management of toxic material.« less

Zinc oxide integrated area efficient high output low power wavy channel thin film transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanna, A. N.; Ghoneim, M. T.; Bahabry, R. R.

2013-11-25

We report an atomic layer deposition based zinc oxide channel material integrated thin film transistor using wavy channel architecture allowing expansion of the transistor width in the vertical direction using the fin type features. The experimental devices show area efficiency, higher normalized output current, and relatively lower power consumption compared to the planar architecture. This performance gain is attributed to the increased device width and an enhanced applied electric field due to the architecture when compared to a back gated planar device with the same process conditions.

Reconstruction-free sensitive wavefront sensor based on continuous position sensitive detectors.

PubMed

Godin, Thomas; Fromager, Michael; Cagniot, Emmanuel; Brunel, Marc; Aït-Ameur, Kamel

2013-12-01

We propose a new device that is able to perform highly sensitive wavefront measurements based on the use of continuous position sensitive detectors and without resorting to any reconstruction process. We demonstrate experimentally its ability to measure small wavefront distortions through the characterization of pump-induced refractive index changes in laser material. In addition, it is shown using computer-generated holograms that this device can detect phase discontinuities as well as improve the quality of sharp phase variations measurements. Results are compared to reference Shack-Hartmann measurements, and dramatic enhancements are obtained.

Nanocarbon-Based Materials for Flexible All-Solid-State Supercapacitors.

PubMed

Lv, Tian; Liu, Mingxian; Zhu, Dazhang; Gan, Lihua; Chen, Tao

2018-04-01

Because of the rapid development of flexible electronics, it is important to develop high-performance flexible energy-storage devices, such as supercapacitors and metal-ion batteries. Compared with metal-ion batteries, supercapacitors exhibit higher power density, longer cycling life, and excellent safety, and they can be easily fabricated into all-solid-state devices by using polymer gel electrolytes. All-solid-state supercapacitors (ASSSCs) have the advantages of being lightweight and flexible, thus showing great potential to be used as power sources for flexible portable electronics. Because of their high specific surface area and excellent electrical and mechanical properties, nanocarbon materials (such as carbon nanotubes, graphene, carbon nanofibers, and so on) have been widely used as efficient electrode materials for flexible ASSSCs, and great achievements have been obtained. Here, the recent advances in flexible ASSSCs are summarized, from design strategies to fabrication techniques for nanocarbon electrodes and devices. Current challenges and future perspectives are also discussed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

MOCVD Growth and Characterization of n-type Zinc Oxide Thin Films

NASA Astrophysics Data System (ADS)

Ben-Yaacov, Tammy

In the past decade, there has been widespread effort in the development of zinc oxide as a II-V1 semiconductor material. ZnO has potential advantages in optoelectronip device applications due to its unique electrical and optical properties. What stands out among these properties is its wide direct bandgap of 3.37 eV and its high electrical conductivity and transparency in the visible and near-UV regions of the spectrum. ZnO can be grown heteroepitaxially on GaN under near lattice-matched conditions and homoepitaxially as well, as high-quality bulk ZnO substrates are commercially available. This dissertation focuses on the development of the growth of high-quality, single crystal n-type ZnO films, control of n-type conductivity, as well as its application as a transparent contact material in GaN-based devices. The first part of this dissertation is an extensive heteroepitaxial and homoepitaxial growth study presenting the properties of ZnO(0001) layers grown on GaN(0001) templates and ZnO(0001) substrates. We show that deposition on GaN requires a two-step growth technique involving the growth of a low temperature nucleation layer before growing a high temperature epitaxial layer in order to obtain smooth ZnO films with excellent crystal quality and step-flow surface morphology. We obtained homoepitaxial ZnO(0001) films of structural quality and surface morphology that is comparable to the as-received substrates, and showed that a high growth temperature (≥1000°C) is needed in order to achieve step-flow growth mode. We performed n-type doping experiments, and established the conditions for which Indium effectively controls the n-type conductivity of ZnO films grown on GaN(0001) templates. A peak carrier concentration of 3.22x 10 19cm-3 and minimum sheet resistance of 97 O/square was achieved, while simultaneously maintaining good morphology and crystal quality. Finally, we present In-doped ZnO films implemented as p-contacts for GaN-based solar cells and LEDs, and we investigate the n-ZnO/p-GaN interface. We show that ZnO has potential as an effective p-contact for these devices, and determine properties that still need improvement in order for ZnO to compete with other contact materials. We also compare the device performance to metal-contacted devices. In summary, this thesis describes the growth of ZnO(0001) films by MOCVD, the progress in developing ZnO material with excellent surface morphology, high crystal quality, and controllable n-type doping, as well as its application to GaN-based optoelectronic devices as a p-contact material.

High-accuracy direct ZT and intrinsic properties measurement of thermoelectric couple devices.

PubMed

Kraemer, D; Chen, G

2014-04-01

Advances in thermoelectric materials in recent years have led to significant improvements in thermoelectric device performance and thus, give rise to many new potential applications. In order to optimize a thermoelectric device for specific applications and to accurately predict its performance ideally the material's figure of merit ZT as well as the individual intrinsic properties (Seebeck coefficient, electrical resistivity, and thermal conductivity) should be known with high accuracy. For that matter, we developed two experimental methods in which the first directly obtains the ZT and the second directly measures the individual intrinsic leg properties of the same p/n-type thermoelectric couple device. This has the advantage that all material properties are measured in the same sample direction after the thermoelectric legs have been mounted in the final device. Therefore, possible effects from crystal anisotropy and from the device fabrication process are accounted for. The Seebeck coefficients, electrical resistivities, and thermal conductivities are measured with differential methods to minimize measurement uncertainties to below 3%. The thermoelectric couple ZT is directly measured with a differential Harman method which is in excellent agreement with the calculated ZT from the individual leg properties. The errors in both the directly measured and calculated thermoelectric couple ZT are below 5% which is significantly lower than typical uncertainties using commercial methods. Thus, the developed technique is ideal for characterizing assembled couple devices and individual thermoelectric materials and enables accurate device optimization and performance predictions. We demonstrate the methods by measuring a p/n-type thermoelectric couple device assembled from commercial bulk thermoelectric Bi2Te3 elements in the temperature range of 30 °C-150 °C and discuss the performance of the couple thermoelectric generator in terms of its efficiency and materials' self-compatibility.

Tungsten oxide@polypyrrole core-shell nanowire arrays as novel negative electrodes for asymmetric supercapacitors.

PubMed

Wang, Fengmei; Zhan, Xueying; Cheng, Zhongzhou; Wang, Zhenxing; Wang, Qisheng; Xu, Kai; Safdar, Muhammad; He, Jun

2015-02-11

Among active pseudocapacitive materials, polypyrrole (PPy) is a promising electrode material in electrochemical capacitors. PPy-based materials research has thus far focused on its electrochemical performance as a positive electrode rather than as a negative electrode for asymmetric supercapacitors (ASCs). Here high-performance electrochemical supercapacitors are designed with tungsten oxide@PPy (WO3 @PPy) core-shell nanowire arrays and Co(OH)2 nanowires grown on carbon fibers. The WO3 @PPy core-shell nanowire electrode exhibits a high capacitance (253 mF/cm2) in negative potentials (-1.0-0.0 V). The ASCs packaged with CF-Co(OH)2 as a positive electrode and CF-WO3 @PPy as a negative electrode display a high volumetric capacitance up to 2.865 F/cm3 based on volume of the device, an energy density of 1.02 mWh/cm3 , and very good stability performance. These findings promote the application of PPy-based nanostructures as advanced negative electrodes for ASCs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Carbon Nanotube Self-Gating Diode and Application in Integrated Circuits.

PubMed

Si, Jia; Liu, Lijun; Wang, Fanglin; Zhang, Zhiyong; Peng, Lian-Mao

2016-07-26

A nano self-gating diode (SGD) based on nanoscale semiconducting material is proposed, simulated, and realized on semiconducting carbon nanotubes (CNTs) through a doping-free fabrication process. The relationships between the performance and material/structural parameters of the SGD are explored through numerical simulation and verified by experiment results. Based on these results, performance optimization strategy is outlined, and high performance CNT SGDs are fabricated and demonstrated to surpass other published CNT diodes. In particular the CNT SGD exhibits high rectifier factor of up to 1.4 × 10(6) while retains large on-state current. Benefiting from high yield and stability, CNT SGDs are used for constructing logic and analog integrated circuits. Two kinds of basic digital gates (AND and OR) have been realized on chip through using CNT SGDs and on-chip Ti wire resistances, and a full wave rectifier circuit has been demonstrated through using two CNT SGDs. Although demonstrated here using CNT SGDs, this device structure may in principle be implemented using other semiconducting nanomaterials, to provide ideas and building blocks for electronic applications based on nanoscale materials.

Lead-Free MA2CuCl(x)Br(4-x) Hybrid Perovskites.

PubMed

Cortecchia, Daniele; Dewi, Herlina Arianita; Yin, Jun; Bruno, Annalisa; Chen, Shi; Baikie, Tom; Boix, Pablo P; Grätzel, Michael; Mhaisalkar, Subodh; Soci, Cesare; Mathews, Nripan

2016-02-01

Despite their extremely good performance in solar cells with efficiencies approaching 20% and the emerging application for light-emitting devices, organic-inorganic lead halide perovskites suffer from high content of toxic, polluting, and bioaccumulative Pb, which may eventually hamper their commercialization. Here, we present the synthesis of two-dimensional (2D) Cu-based hybrid perovskites and study their optoelectronic properties to investigate their potential application in solar cells and light-emitting devices, providing a new environmental-friendly alternative to Pb. The series (CH3NH3)2CuCl(x)Br(4-x) was studied in detail, with the role of Cl found to be essential for stabilization. By exploiting the additional Cu d-d transitions and appropriately tuning the Br/Cl ratio, which affects ligand-to-metal charge transfer transitions, the optical absorption in this series of compounds can be extended to the near-infrared for optimal spectral overlap with the solar irradiance. In situ formation of Cu(+) ions was found to be responsible for the green photoluminescence of this material set. Processing conditions for integrating Cu-based perovskites into photovoltaic device architectures, as well as the factors currently limiting photovoltaic performance, are discussed: among them, we identified the combination of low absorption coefficient and heavy mass of the holes as main limitations for the solar cell efficiency. To the best of our knowledge, this is the first demonstration of the potential of 2D copper perovskite as light harvesters and lays the foundation for further development of perovskite based on transition metals as alternative lead-free materials. Appropriate molecular design will be necessary to improve the material's properties and solar cell performance filling the gap with the state-of-the-art Pb-based perovskite devices.

A High-Performance Optical Memory Array Based on Inhomogeneity of Organic Semiconductors.

PubMed

Pei, Ke; Ren, Xiaochen; Zhou, Zhiwen; Zhang, Zhichao; Ji, Xudong; Chan, Paddy Kwok Leung

2018-03-01

Organic optical memory devices keep attracting intensive interests for diverse optoelectronic applications including optical sensors and memories. Here, flexible nonvolatile optical memory devices are developed based on the bis[1]benzothieno[2,3-d;2',3'-d']naphtho[2,3-b;6,7-b']dithiophene (BBTNDT) organic field-effect transistors with charge trapping centers induced by the inhomogeneity (nanosprouts) of the organic thin film. The devices exhibit average mobility as high as 7.7 cm 2 V -1 s -1 , photoresponsivity of 433 A W -1 , and long retention time for more than 6 h with a current ratio larger than 10 6 . Compared with the standard floating gate memory transistors, the BBTNDT devices can reduce the fabrication complexity, cost, and time. Based on the reasonable performance of the single device on a rigid substrate, the optical memory transistor is further scaled up to a 16 × 16 active matrix array on a flexible substrate with operating voltage less than 3 V, and it is used to map out 2D optical images. The findings reveal the potentials of utilizing [1]benzothieno[3,2-b][1]benzothiophene (BTBT) derivatives as organic semiconductors for high-performance optical memory transistors with a facile structure. A detailed study on the charge trapping mechanism in the derivatives of BTBT materials is also provided, which is closely related to the nanosprouts formed inside the organic active layer. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Flexible non-volatile memory devices based on organic semiconductors

NASA Astrophysics Data System (ADS)

Cosseddu, Piero; Casula, Giulia; Lai, Stefano; Bonfiglio, Annalisa

2015-09-01

The possibility of developing fully organic electronic circuits is critically dependent on the ability to realize a full set of electronic functionalities based on organic devices. In order to complete the scene, a fundamental element is still missing, i.e. reliable data storage. Over the past few years, a considerable effort has been spent on the development and optimization of organic polymer based memory elements. Among several possible solutions, transistor-based memories and resistive switching-based memories are attracting a great interest in the scientific community. In this paper, a route for the fabrication of organic semiconductor-based memory devices with performances beyond the state of the art is reported. Both the families of organic memories will be considered. A flexible resistive memory based on a novel combination of materials is presented. In particular, high retention time in ambient conditions are reported. Complementary, a low voltage transistor-based memory is presented. Low voltage operation is allowed by an hybrid, nano-sized dielectric, which is also responsible for the memory effect in the device. Thanks to the possibility of reproducibly fabricating such device on ultra-thin substrates, high mechanical stability is reported.

Multielectron-Transfer-based Rechargeable Energy Storage of Two-Dimensional Coordination Frameworks with Non-Innocent Ligands.

PubMed

Wada, Keisuke; Sakaushi, Ken; Sasaki, Sono; Nishihara, Hiroshi

2018-04-19

The metallically conductive bis(diimino)nickel framework (NiDI), an emerging class of metal-organic framework (MOF) analogues consisting of two-dimensional (2D) coordination networks, was found to have an energy storage principle that uses both cation and anion insertion. This principle gives high energy led by a multielectron transfer reaction: Its specific capacity is one of the highest among MOF-based cathode materials in rechargeable energy storage devices, with stable cycling performance up to 300 cycles. This mechanism was studied by a wide spectrum of electrochemical techniques combined with density-functional calculations. This work shows that a rationally designed material system of conductive 2D coordination networks can be promising electrode materials for many types of energy devices. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Highly Efficient Solution-Processed Deep-Red Organic Light-Emitting Diodes Based on an Exciplex Host Composed of a Hole Transporter and a Bipolar Host.

PubMed

Huang, Manli; Jiang, Bei; Xie, Guohua; Yang, Chuluo

2017-10-19

With the aim to achieve highly efficient deep-red emission, we introduced an exciplex forming cohost, 4,4',4″-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA): 2,5-bis(2-(9H-carbazol-9-yl)phenyl)-1,3,4-oxadiazole (o-CzOXD) (1:1). Due to the efficient triplet up-conversion processes upon the exciplex forming cohost, excellent performances of the devices were achieved with deep-red emission. Using the heteroleptic iridium complexes as the guest dopants, the solution-processed deep-red phosphorescent organic light-emitting diodes (PhOLEDs) with the iridium(III) bis(6-(4-(tert-butyl)phenyl)phenanthridine)acetylacetonate [(TP-BQ) 2 Ir(acac)]-based phosphorescent emitter exhibited an electroluminescent peak at 656 nm and a maximum external quantum efficiency (EQE) of 11.9%, which is 6.6 times that of the device based on the guest emitter doped in the polymer-based cohost. The unique exciplex with a typical hole transporter and a bipolar material is ideal and universal for hosting the red PhOLEDs and tremendously improves the device performances.

High-performance fused indium gallium arsenide/silicon photodiode

NASA Astrophysics Data System (ADS)

Kang, Yimin

Modern long haul, high bit rate fiber-optic communication systems demand photodetectors with high sensitivity. Avalanche photodiodes (APDs) exhibit superior sensitivity performance than other types of photodetectors by virtual of its internal gain mechanism. This dissertation work further advances the APD performance by applying a novel materials integration technique. It is the first successful demonstration of wafer fused InGaAs/Si APDs with low dark current and low noise. APDs generally adopt separate absorption and multiplication (SAM) structure, which allows independent optimization of materials properties in two distinct regions. While the absorption material needs to have high absorption coefficient in the target wavelength range to achieve high quantum efficiency, it is desirable for the multiplication material to have large discrepancy between its electron and hole ionization coefficients to reduce noise. According to these criteria, InGaAs and Si are the ideal materials combination. Wafer fusion is the enabling technique that makes this theoretical ideal an experimental possibility. APDs fabricated on the fused InGaAs/Si wafer with mesa structure exhibit low dark current and low noise. Special device fabrication techniques and high quality wafer fusion reduce dark current to nano ampere level at unity gain, comparable to state-of-the-art commercial III/V APDs. The small excess noise is attributed to the large difference in ionization coefficients between electrons and holes in silicon. Detailed layer structure designs are developed specifically for fused InGaAs/Si APDs based on principles similar to those used in traditional InGaAs/InP APDs. An accurate yet straightforward technique for device structural parameters extraction is also proposed. The extracted results from the fabricated APDs agree with device design parameters. This agreement also confirms that the fusion interface has negligible effect on electric field distributions for devices fabricated from high quality fusion materials. The feasibility of fused InGaAs/Si APD for analog systems is also explored. Preliminary two-tone measurement shows that a moderately high dynamic range of 70 dBc/Hz1/2 for broadband Spur Free Dynamic Range (SFDR) or 82 dBc/Hz2/3 suboctave SFDR, up to 50 muA of optical current, can be achieved. The theoretical analyses of SNR show that fused InGaAs/Si APD receivers can provide larger Signal-to-Noise Ratio (SNR) than their III/V counterparts.

Printed Biopolymer-Based Electro-Optic Device Components

DTIC Science & Technology

2013-07-01

devices and fabricated e-beam lithography-based master molds. Printed micro and nanostructures using a newly developed spin-on nanoprinting (SNAP...polymeric materials. Among the natural biopolymers , deoxyribonucleic acid (DNA) is an attractive material which can be used to make electronic and...photonic devices [2, 3]. If patterned on the micro and nanoscale using a soft lithography technique, high quality biodegradable optical devices can be

Single-layer MoS2 electronics.

PubMed

Lembke, Dominik; Bertolazzi, Simone; Kis, Andras

2015-01-20

CONSPECTUS: Atomic crystals of two-dimensional materials consisting of single sheets extracted from layered materials are gaining increasing attention. The most well-known material from this group is graphene, a single layer of graphite that can be extracted from the bulk material or grown on a suitable substrate. Its discovery has given rise to intense research effort culminating in the 2010 Nobel Prize in physics awarded to Andre Geim and Konstantin Novoselov. Graphene however represents only the proverbial tip of the iceberg, and increasing attention of researchers is now turning towards the veritable zoo of so-called "other 2D materials". They have properties complementary to graphene, which in its pristine form lacks a bandgap: MoS2, for example, is a semiconductor, while NbSe2 is a superconductor. They could hold the key to important practical applications and new scientific discoveries in the two-dimensional limit. This family of materials has been studied since the 1960s, but most of the research focused on their tribological applications: MoS2 is best known today as a high-performance dry lubricant for ultrahigh-vacuum applications and in car engines. The realization that single layers of MoS2 and related materials could also be used in functional electronic devices where they could offer advantages compared with silicon or graphene created a renewed interest in these materials. MoS2 is currently gaining the most attention because the material is easily available in the form of a mineral, molybdenite, but other 2D transition metal dichalcogenide (TMD) semiconductors are expected to have qualitatively similar properties. In this Account, we describe recent progress in the area of single-layer MoS2-based devices for electronic circuits. We will start with MoS2 transistors, which showed for the first time that devices based on MoS2 and related TMDs could have electrical properties on the same level as other, more established semiconducting materials. This allowed rapid progress in this area and was followed by demonstrations of basic digital circuits and transistors operating in the technologically relevant gigahertz range of frequencies, showing that the mobility of MoS2 and TMD materials is sufficiently high to allow device operation at such high frequencies. Monolayer MoS2 and other TMDs are also direct band gap semiconductors making them interesting for realizing optoelectronic devices. These range from simple phototransistors showing high sensitivity and low noise, to light emitting diodes and solar cells. All the electronic and optoelectronic properties of MoS2 and TMDs are accompanied by interesting mechanical properties with monolayer MoS2 being as stiff as steel and 30× stronger. This makes it especially interesting in the context of flexible electronics where it could combine the high degree of mechanical flexibility commonly associated with organic semiconductors with high levels of electrical performance. All these results show that MoS2 and TMDs are promising materials for electronic and optoelectronic applications.

All-Metallic Vertical Transistors Based on Stacked Dirac Materials

NASA Astrophysics Data System (ADS)

Wang, Yangyang; Ni, Zeyuan; Liu, Qihang; Quhe, Ruge; Zheng, Jiaxin; Ye, Meng; Yu, Dapeng; Shi, Junjie; Yang, Jinbo; Li, Ju; Lu, Jing; Collaborative Innovation Center of Quantum Matter, Beijing Collaboration

2015-03-01

All metallic transistor can be fabricated from pristine semimetallic Dirac materials (such as graphene, silicene, and germanene), but the on/off current ratio is very low. In a vertical heterostructure composed by two Dirac materials, the Dirac cones of the two materials survive the weak interlayer van der Waals interaction based on density functional theory method, and electron transport from the Dirac cone of one material to the one of the other material is therefore forbidden without assistance of phonon because of momentum mismatch. First-principles quantum transport simulations of the all-metallic vertical Dirac material heterostructure devices confirm the existence of a transport gap of over 0.4 eV, accompanied by a switching ratio of over 104. Such a striking behavior is robust against the relative rotation between the two Dirac materials and can be extended to twisted bilayer graphene. Therefore, all-metallic junction can be a semiconductor and novel avenue is opened up for Dirac material vertical structures in high-performance devices without opening their band gaps. A visiting student in MIT now.

Transparent and stretchable high-performance supercapacitors based on wrinkled graphene electrodes.

PubMed

Chen, Tao; Xue, Yuhua; Roy, Ajit K; Dai, Liming

2014-01-28

Transparent and/or stretchable energy storage devices have attracted intense attention due to their unique optical and/or mechanical properties as well as their intrinsic energy storage function. However, it remains a great challenge to integrate transparent and stretchable properties into an energy storage device because the currently developed electrodes are either transparent or stretchable, but not both. Herein, we report a simple method to fabricate wrinkled graphene with high stretchability and transparency. The resultant wrinkled graphene sheets were used as both current collector and electrode materials to develop transparent and stretchable supercapacitors, which showed a high transparency (57% at 550 nm) and can be stretched up to 40% strain without obvious performance change over hundreds of stretching cycles.

Spray-painted binder-free SnSe electrodes for high-performance energy-storage devices.

PubMed

Wang, Xianfu; Liu, Bin; Xiang, Qingyi; Wang, Qiufan; Hou, Xiaojuan; Chen, Di; Shen, Guozhen

2014-01-01

SnSe nanocrystal electrodes on three-dimensional (3D) carbon fabric and Au-coated polyethylene terephthalate (PET) wafer have been prepared by a simple spray-painting process and were further investigated as binder-free active-electrodes for Lithium-ion batteries (LIBs) and flexible stacked all-solid-state supercapacitors. The as-painted SnSe nanocrystals/carbon fabric electrodes exhibit an outstanding capacity of 676 mAh g(-1) after 80 cycles at a current density of 200 mA g(-1) and a considerable high-rate capability in lithium storage because of the excellent ion transport from the electrolyte to the active materials and the efficient charge transport between current collector and electrode materials. The binder-free electrodes also provide a larger electrochemical active surface compared with electrodes containing binders, which leads to the enhanced capacities of energy-storage devices. A flexible stacked all-solid-state supercapacitor based on the SnSe nanocrystals on Au-coated PET wafers shows high capacitance reversibility with little performance degradation at different current densities after 2200 charge-discharge cycles and even when bent. This allows for many potential applications in facile, cost-effective, spray-paintable, and flexible energy-storage devices. The results indicate that the fabrication of binder-free electrodes by a spray painting process is an interesting direction for the preparation of high-performance energy-storage devices. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Active material, optical mode and cavity impact on nanoscale electro-optic modulation performance

NASA Astrophysics Data System (ADS)

Amin, Rubab; Suer, Can; Ma, Zhizhen; Sarpkaya, Ibrahim; Khurgin, Jacob B.; Agarwal, Ritesh; Sorger, Volker J.

2017-10-01

Electro-optic modulation is a key function in optical data communication and possible future optical compute engines. The performance of modulators intricately depends on the interaction between the actively modulated material and the propagating waveguide mode. While a variety of high-performance modulators have been demonstrated, no comprehensive picture of what factors are most responsible for high performance has emerged so far. Here we report the first systematic and comprehensive analytical and computational investigation for high-performance compact on-chip electro-optic modulators by considering emerging active materials, model considerations and cavity feedback at the nanoscale. We discover that the delicate interplay between the material characteristics and the optical mode properties plays a key role in defining the modulator performance. Based on physical tradeoffs between index modulation, loss, optical confinement factors and slow-light effects, we find that there exist combinations of bias, material and optical mode that yield efficient phase or amplitude modulation with acceptable insertion loss. Furthermore, we show how material properties in the epsilon near zero regime enable reduction of length by as much as by 15 times. Lastly, we introduce and apply a cavity-based electro-optic modulator figure of merit, Δλ/Δα, relating obtainable resonance tuning via phase shifting relative to the incurred losses due to the fundamental Kramers-Kronig relations suggesting optimized device operating regions with optimized modulation-to-loss tradeoffs. This work paves the way for a holistic design rule of electro-optic modulators for high-density on-chip integration.

Materials and processing approaches for foundry-compatible transient electronics

PubMed Central

Chang, Jan-Kai; Fang, Hui; Bower, Christopher A.; Song, Enming; Yu, Xinge; Rogers, John A.

2017-01-01

Foundry-based routes to transient silicon electronic devices have the potential to serve as the manufacturing basis for “green” electronic devices, biodegradable implants, hardware secure data storage systems, and unrecoverable remote devices. This article introduces materials and processing approaches that enable state-of-the-art silicon complementary metal-oxide-semiconductor (CMOS) foundries to be leveraged for high-performance, water-soluble forms of electronics. The key elements are (i) collections of biodegradable electronic materials (e.g., silicon, tungsten, silicon nitride, silicon dioxide) and device architectures that are compatible with manufacturing procedures currently used in the integrated circuit industry, (ii) release schemes and transfer printing methods for integration of multiple ultrathin components formed in this way onto biodegradable polymer substrates, and (iii) planarization and metallization techniques to yield interconnected and fully functional systems. Various CMOS devices and circuit elements created in this fashion and detailed measurements of their electrical characteristics highlight the capabilities. Accelerated dissolution studies in aqueous environments reveal the chemical kinetics associated with the underlying transient behaviors. The results demonstrate the technical feasibility for using foundry-based routes to sophisticated forms of transient electronic devices, with functional capabilities and cost structures that could support diverse applications in the biomedical, military, industrial, and consumer industries. PMID:28652373

Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide.

PubMed

Min Lee, Seung; Hwan Yum, Jung; Larsen, Eric S; Chul Lee, Woo; Keun Kim, Seong; Bielawski, Christopher W; Oh, Jungwoo

2017-10-16

Silicon-on-insulator (SOI) technology improves the performance of devices by reducing parasitic capacitance. Devices based on SOI or silicon-on-sapphire technology are primarily used in high-performance radio frequency (RF) and radiation sensitive applications as well as for reducing the short channel effects in microelectronic devices. Despite their advantages, the high substrate cost and overheating problems associated with complexities in substrate fabrication as well as the low thermal conductivity of silicon oxide prevent broad applications of this technology. To overcome these challenges, we describe a new approach of using beryllium oxide (BeO). The use of atomic layer deposition (ALD) for producing this material results in lowering the SOI wafer production cost. Furthermore, the use of BeO exhibiting a high thermal conductivity might minimize the self-heating issues. We show that crystalline Si can be grown on ALD BeO and the resultant devices exhibit potential for use in advanced SOI technology applications.

Opportunity of spinel ferrite materials in nonvolatile memory device applications based on their resistive switching performances.

PubMed

Hu, Wei; Qin, Ni; Wu, Guangheng; Lin, Yanting; Li, Shuwei; Bao, Dinghua

2012-09-12

The opportunity of spinel ferrites in nonvolatile memory device applications has been demonstrated by the resistive switching performance characteristics of a Pt/NiFe(2)O(4)/Pt structure, such as low operating voltage, high device yield, long retention time (up to 10(5) s), and good endurance (up to 2.2 × 10(4) cycles). The dominant conduction mechanisms are Ohmic conduction in the low-resistance state and in the lower-voltage region of the high-resistance state and Schottky emission in the higher-voltage region of the high-resistance state. On the basis of measurements of the temperature dependence of the resistances and magnetic properties in different resistance states, we explain the physical mechanism of resistive switching of Pt/NiFe(2)O(4)/Pt devices using the model of formation and rupture of conducting filaments by considering the thermal effect of oxygen vacancies and changes in the valences of cations due to the redox effect.

Carbon nanotube woven textile photodetector

NASA Astrophysics Data System (ADS)

Zubair, Ahmed; Wang, Xuan; Mirri, Francesca; Tsentalovich, Dmitri E.; Fujimura, Naoki; Suzuki, Daichi; Soundarapandian, Karuppasamy P.; Kawano, Yukio; Pasquali, Matteo; Kono, Junichiro

2018-01-01

The increasing interest in mobile and wearable technology demands the enhancement of functionality of clothing through incorporation of sophisticated architectures of multifunctional materials. Flexible electronic and photonic devices based on organic materials have made impressive progress over the past decade, but higher performance, simpler fabrication, and most importantly, compatibility with woven technology are desired. Here we report on the development of a weaved, substrateless, and polarization-sensitive photodetector based on doping-engineered fibers of highly aligned carbon nanotubes. This room-temperature-operating, self-powered detector responds to radiation in an ultrabroad spectral range, from the ultraviolet to the terahertz, through the photothermoelectric effect, with a low noise-equivalent power (a few nW/Hz 1 /2) throughout the range and with a Z T -factor value that is twice as large as that of previously reported carbon nanotube-based photothermoelectric photodetectors. Particularly, we fabricated a ˜1 -m-long device consisting of tens of p+-p- junctions and weaved it into a shirt. This device demonstrated a collective photoresponse of the series-connected junctions under global illumination. The performance of the device did not show any sign of deterioration through 200 bending tests with a bending radius smaller than 100 μ m as well as standard washing and ironing cycles. This unconventional photodetector will find applications in wearable technology that require detection of electromagnetic radiation.

High Performance Organic Materials and Devices

DTIC Science & Technology

2006-03-31

on this material exhibited external quantum efficiency of 2.48% and electroluminescence efficiency as high as 3.33 cd/A. 15. SUBJECT TERMS 16...International de L’Eclairage coordinate at (0.164, 0.188). The external quantum efficiency of 2.48% and electroluminescence efficiency as high as 3.33 cd...more than 90% absorption in active layer, and highly balanced carrier transport. 4 5. High efficient blue- electroluminescence device shows maximum

Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics.

PubMed

Yu, Lili; Lee, Yi-Hsien; Ling, Xi; Santos, Elton J G; Shin, Yong Cheol; Lin, Yuxuan; Dubey, Madan; Kaxiras, Efthimios; Kong, Jing; Wang, Han; Palacios, Tomás

2014-06-11

Two-dimensional (2D) materials have generated great interest in the past few years as a new toolbox for electronics. This family of materials includes, among others, metallic graphene, semiconducting transition metal dichalcogenides (such as MoS2), and insulating boron nitride. These materials and their heterostructures offer excellent mechanical flexibility, optical transparency, and favorable transport properties for realizing electronic, sensing, and optical systems on arbitrary surfaces. In this paper, we demonstrate a novel technology for constructing large-scale electronic systems based on graphene/molybdenum disulfide (MoS2) heterostructures grown by chemical vapor deposition. We have fabricated high-performance devices and circuits based on this heterostructure, where MoS2 is used as the transistor channel and graphene as contact electrodes and circuit interconnects. We provide a systematic comparison of the graphene/MoS2 heterojunction contact to more traditional MoS2-metal junctions, as well as a theoretical investigation, using density functional theory, of the origin of the Schottky barrier height. The tunability of the graphene work function with electrostatic doping significantly improves the ohmic contact to MoS2. These high-performance large-scale devices and circuits based on this 2D heterostructure pave the way for practical flexible transparent electronics.

ZnO@MnO2 Core-Shell Nanofiber Cathodes for High Performance Asymmetric Supercapacitors.

PubMed

Radhamani, A V; Shareef, K M; Rao, M S Ramachandra

2016-11-09

Asymmetric supercapacitors (ASCs) with aqueous electrolyte medium have recently become the focus of increasing research. For high performance ASCs, selection of cathode materials play a crucial role, and core-shell nanostructures are found to be a good choice. We successfully synthesized, ZnO@MnO 2 core-shell nanofibers (NFs) by modification of high-aspect-ratio-electrospun ZnO NFs hydrothermally with MnO 2 nanoflakes. High conductivity of the ZnO NFs and the exceptionally high pseudocapacitive nature of MnO 2 nanoflakes coating delivered a specific capacitance of 907 Fg -1 at 0.6 Ag -1 for the core-shell NFs. A simple and cost-effective ASC construction was demonstrated with ZnO@MnO 2 NFs as a battery-type cathode material and a commercial-quality activated carbon as a capacitor-type anode material. The fabricated device functioned very well in a voltage window of 0-2.0 V, and a red-LED was illuminated using a single-celled fabricated ASC device. It was found to deliver a maximum energy density of 17 Whkg -1 and a power density of 6.5 kWkg -1 with capacitance retention of 94% and Coulombic efficiency of 100%. The novel architecture of the ZnO@MnO 2 core-shell nanofibrous material implies the importance of using simple design of fiber-based electrode material by mere changes of core and shell counterparts.

Femtosecond laser three-dimensional micro- and nanofabrication

NASA Astrophysics Data System (ADS)

Sugioka, Koji; Cheng, Ya

2014-12-01

The rapid development of the femtosecond laser has revolutionized materials processing due to its unique characteristics of ultrashort pulse width and extremely high peak intensity. The short pulse width suppresses the formation of a heat-affected zone, which is vital for ultrahigh precision fabrication, whereas the high peak intensity allows nonlinear interactions such as multiphoton absorption and tunneling ionization to be induced in transparent materials, which provides versatility in terms of the materials that can be processed. More interestingly, irradiation with tightly focused femtosecond laser pulses inside transparent materials makes three-dimensional (3D) micro- and nanofabrication available due to efficient confinement of the nonlinear interactions within the focal volume. Additive manufacturing (stereolithography) based on multiphoton absorption (two-photon polymerization) enables the fabrication of 3D polymer micro- and nanostructures for photonic devices, micro- and nanomachines, and microfluidic devices, and has applications for biomedical and tissue engineering. Subtractive manufacturing based on internal modification and fabrication can realize the direct fabrication of 3D microfluidics, micromechanics, microelectronics, and photonic microcomponents in glass. These microcomponents can be easily integrated in a single glass microchip by a simple procedure using a femtosecond laser to realize more functional microdevices, such as optofluidics and integrated photonic microdevices. The highly localized multiphoton absorption of a tightly focused femtosecond laser in glass can also induce strong absorption only at the interface of two closely stacked glass substrates. Consequently, glass bonding can be performed based on fusion welding with femtosecond laser irradiation, which provides the potential for applications in electronics, optics, microelectromechanical systems, medical devices, microfluidic devices, and small satellites. This review paper describes the concepts and principles of femtosecond laser 3D micro- and nanofabrication and presents a comprehensive review on the state-of-the-art, applications, and the future prospects of this technology.

Femtosecond laser three-dimensional micro- and nanofabrication

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sugioka, Koji, E-mail: ksugioka@riken.jp; Cheng, Ya, E-mail: ya.cheng@siom.ac.cn

2014-12-15

The rapid development of the femtosecond laser has revolutionized materials processing due to its unique characteristics of ultrashort pulse width and extremely high peak intensity. The short pulse width suppresses the formation of a heat-affected zone, which is vital for ultrahigh precision fabrication, whereas the high peak intensity allows nonlinear interactions such as multiphoton absorption and tunneling ionization to be induced in transparent materials, which provides versatility in terms of the materials that can be processed. More interestingly, irradiation with tightly focused femtosecond laser pulses inside transparent materials makes three-dimensional (3D) micro- and nanofabrication available due to efficient confinement ofmore » the nonlinear interactions within the focal volume. Additive manufacturing (stereolithography) based on multiphoton absorption (two-photon polymerization) enables the fabrication of 3D polymer micro- and nanostructures for photonic devices, micro- and nanomachines, and microfluidic devices, and has applications for biomedical and tissue engineering. Subtractive manufacturing based on internal modification and fabrication can realize the direct fabrication of 3D microfluidics, micromechanics, microelectronics, and photonic microcomponents in glass. These microcomponents can be easily integrated in a single glass microchip by a simple procedure using a femtosecond laser to realize more functional microdevices, such as optofluidics and integrated photonic microdevices. The highly localized multiphoton absorption of a tightly focused femtosecond laser in glass can also induce strong absorption only at the interface of two closely stacked glass substrates. Consequently, glass bonding can be performed based on fusion welding with femtosecond laser irradiation, which provides the potential for applications in electronics, optics, microelectromechanical systems, medical devices, microfluidic devices, and small satellites. This review paper describes the concepts and principles of femtosecond laser 3D micro- and nanofabrication and presents a comprehensive review on the state-of-the-art, applications, and the future prospects of this technology.« less

Dense Plasma Focus - From Alternative Fusion Source to Versatile High Energy Density Plasma Source for Plasma Nanotechnology

NASA Astrophysics Data System (ADS)

Rawat, R. S.

2015-03-01

The dense plasma focus (DPF), a coaxial plasma gun, utilizes pulsed high current electrical discharge to heat and compress the plasma to very high density and temperature with energy densities in the range of 1-10 × 1010 J/m3. The DPF device has always been in the company of several alternative magnetic fusion devices as it produces intense fusion neutrons. Several experiments conducted on many different DPF devices ranging over several order of storage energy have demonstrated that at higher storage energy the neutron production does not follow I4 scaling laws and deteriorate significantly raising concern about the device's capability and relevance for fusion energy. On the other hand, the high energy density pinch plasma in DPF device makes it a multiple radiation source of ions, electron, soft and hard x-rays, and neutrons, making it useful for several applications in many different fields such as lithography, radiography, imaging, activation analysis, radioisotopes production etc. Being a source of hot dense plasma, strong shockwave, intense energetic beams and radiation, etc, the DPF device, additionally, shows tremendous potential for applications in plasma nanoscience and plasma nanotechnology. In the present paper, the key features of plasma focus device are critically discussed to understand the novelties and opportunities that this device offers in processing and synthesis of nanophase materials using, both, the top-down and bottom-up approach. The results of recent key experimental investigations performed on (i) the processing and modification of bulk target substrates for phase change, surface reconstruction and nanostructurization, (ii) the nanostructurization of PLD grown magnetic thin films, and (iii) direct synthesis of nanostructured (nanowire, nanosheets and nanoflowers) materials using anode target material ablation, ablated plasma and background reactive gas based synthesis and purely gas phase synthesis of various different types of nanostructured materials using DPF device will discussed to establish this device as versatile tool for plasma nanotechnology.

Novel and high-performance asymmetric micro-supercapacitors based on graphene quantum dots and polyaniline nanofibers.

PubMed

Liu, Wenwen; Yan, Xingbin; Chen, Jiangtao; Feng, Yaqiang; Xue, Qunji

2013-07-07

In comparison with graphene sheets, graphene quantum dots (GQDs) exhibit novel chemical/physical properties including nanometer-size, abundant edge defects, good electrical conductivity, high mobility, chemical inertia, stable photoluminescence and better surface grafting, making them promising for fabricating various novel devices. In the present work, an asymmetric micro-supercapacitor, using GQDs as negative active material and polyaniline (PANI) nanofibers as positive active material, is built for the first time by a simple and controllable two-step electro-deposition on interdigital finger gold electrodes. Electrochemical measurements reveal that the as-made GQDs//PANI asymmetric micro-supercapacitor has a more excellent rate capability (up to 1000 V s(-1)) than previously reported electrode materials, as well as faster power response capability (with a very short relaxation time constant of 115.9 μs) and better cycling stability after 1500 cycles in aqueous electrolyte. On this basis, an all-solid-state GQDs//PANI asymmetric micro-supercapacitor is fabricated using H3PO4-polyvinyl alcohol gel as electrolyte, which also exhibits desirable electrochemical capacitive performances. These encouraging results presented here may open up new insight into GQDs with highly promising applications in high-performance energy-storage devices, and further expand the potential applications of GQDs beyond the energy-oriented application of GQDs discussed above.

Ultra High p-doping Material Research for GaN Based Light Emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vladimir Dmitriev

2007-06-30

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading inmore » light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.« less

Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping.

PubMed

Ko, Seungpil; Na, Junhong; Moon, Young-Sun; Zschieschang, Ute; Acharya, Rachana; Klauk, Hagen; Kim, Gyu-Tae; Burghard, Marko; Kern, Klaus

2017-12-13

Ultrathin sheets of two-dimensional (2D) materials like transition metal dichalcogenides have attracted strong attention as components of high-performance light-harvesting devices. Here, we report the implementation of Schottky junction-based photovoltaic devices through site-selective surface doping of few-layer WSe 2 in lateral contact configuration. Specifically, whereas the drain region is covered by a strong molecular p-type dopant (NDP-9) to achieve an Ohmic contact, the source region is coated with an Al 2 O 3 layer, which causes local n-type doping and correspondingly an increase of the Schottky barrier at the contact. By scanning photocurrent microscopy using green laser light, it could be confirmed that photocurent generation is restricted to the region around the source contact. The local photoinduced charge separation is associated with a photoresponsivity of up to 20 mA W -1 and an external quantum efficiency of up to 1.3%. The demonstrated device concept should be easily transferrable to other van der Waals 2D materials.

Flexible carbon micro-supercapacitors prepared by direct cw-laser writing

NASA Astrophysics Data System (ADS)

Cai, Jinguang; Watanabe, Akira

2016-03-01

Micro-/nano-scale power supply units with high energy and high power densities are critical components for the development of compact miniaturized portable electronic devices. Supercapacitors have attracted many research attentions due to their high power density, robust cycle performance, pollution-free operation, and maintenance-free features. Besides, the properties of small size, light weight, and flexibility are also required. On-chip microsupercapacitors (MSCs) have the potential acting as power supply units in portable devices, due to their simplified packaging processes and compatibility to the integrated circuits. However, the fabrication methods and materials should be cost-effective, scalable, and compatible to current electronic industry. Carbon materials own high specific surface areas, electrochemical stability, and high electrical conductivity, which are critical parameters for high-power supercapacitors. Moreover, the high mechanical tolerance makes them good candidates for flexible wearable devices. Therefore, MSCs based on carbon materials would satisfy the requirements of portable electronics. In this work, we demonstrated the fabrication of carbon MSCs by laser direct writing on commercial polyimide sheets in Ar with lowcost semiconductor cw-laser with a wavelength of 405nm. The obtained structures are macro-nanostructures comprising graphitized and amorphous carbon with relatively smooth surfaces and low resistance, in compared with the structures obtained by laser writing in air. As-prepared micro-supercapacitors show a high capacitance of about 14.9 mF/cm2 at a scanning rate of 10 mV/s, which is comparable to the reported highest capacitance of carbon-based supercapacitors fabricated by pulse-laser writing.

Highly efficient inverted organic light emitting diodes by inserting a zinc oxide/polyethyleneimine (ZnO:PEI) nano-composite interfacial layer

NASA Astrophysics Data System (ADS)

Kaçar, Rifat; Pıravadılı Mucur, Selin; Yıldız, Fikret; Dabak, Salih; Tekin, Emine

2017-06-01

The electrode/organic interface is one of the key factors in attaining superior device performance in organic electronics, and inserting a tailor-made layer can dramatically modify its properties. The use of nano-composite (NC) materials leads to many advantages by combining materials with the objective of obtaining a desirable combination of properties. In this context, zinc oxide/polyethyleneimine (ZnO:PEI) NC film was incorporated as an interfacial layer into inverted bottom-emission organic light emitting diodes (IBOLEDs) and fully optimized. For orange-red emissive MEH-PPV based IBOLEDs, a high power efficiency of 6.1 lm W-1 at a luminance of 1000 cd m-2 has been achieved. Notably, the external quantum efficiency (EQE) increased from 0.1 to 4.8% and the current efficiency (CE) increased from 0.2 to 8.7 cd A-1 with rise in luminance (L) from 1000 to above 10 000 cd m-2 levels when compared to that of pristine ZnO-based devices. An identical device architecture containing a ZnO:PEI NC layer has also been used to successfully fabricate green and blue emissive IBOLEDs. The significant enhancement in the inverted device performance, in terms of luminance and efficiency, is attributed to a good energy-level alignment between the cathode/organic interface which leads to effective carrier balance, resulting in efficient radiative-recombination.

Active Control of Charge Density Waves at Degenerate Semiconductor Interfaces

NASA Astrophysics Data System (ADS)

Vinnakota, Raj; Genov, Dentcho

We present numerical modeling of an active electronically controlled highly confined charge-density waves, i.e. surface plasmon polaritons (SPPs) at the metallurgic interfaces of degenerate semiconductor materials. An electro-optic switching element for fully-functional plasmonic circuits based on p-n junction semiconductor Surface Plasmon Polariton (SPP) waveguide is shown. Two figures of merits are introduced and parametric study has been performed identifying the device optimal operation range. The Indium Gallium Arsenide (In0.53Ga0.47As) is identified as the best semiconductor material for the device providing high optical confinement, reduced system size and fast operation. The electro-optic SPP switching element is shown to operate at signal modulation up to -24dB and switching rates surpassing 100GHz, thus potentially providing a new pathway toward bridging the gap between electronic and photonic devices. The current work is funded by the NSF EPSCoR CIMM project under award #OIA-1541079.

Materials Design and System Construction for Conventional and New-Concept Supercapacitors.

PubMed

Wu, Zhong; Li, Lin; Yan, Jun-Min; Zhang, Xin-Bo

2017-06-01

With the development of renewable energy and electrified transportation, electrochemical energy storage will be more urgent in the future. Supercapacitors have received extensive attention due to their high power density, fast charge and discharge rates, and long-term cycling stability. During past five years, supercapacitors have been boomed benefited from the development of nanostructured materials synthesis and the promoted innovation of devices construction. In this review, we have summarized the current state-of-the-art development on the fabrication of high-performance supercapacitors. From the electrode material perspective, a variety of materials have been explored for advanced electrode materials with smart material-design strategies such as carbonaceous materials, metal compounds and conducting polymers. Proper nanostructures are engineered to provide sufficient electroactive sites and enhance the kinetics of ion and electron transport. Besides, new-concept supercapacitors have been developed for practical application. Microsupercapacitors and fiber supercapacitors have been explored for portable and compact electronic devices. Subsequently, we have introduced Li-/Na-ion supercapacitors composed of battery-type electrodes and capacitor-type electrode. Integrated energy devices are also explored by incorporating supercapacitors with energy conversion systems for sustainable energy storage. In brief, this review provides a comprehensive summary of recent progress on electrode materials design and burgeoning devices constructions for high-performance supercapacitors.

Structural design of graphene for use in electrochemical energy storage devices.

PubMed

Chen, Kunfeng; Song, Shuyan; Liu, Fei; Xue, Dongfeng

2015-10-07

There are many practical challenges in the use of graphene materials as active components in electrochemical energy storage devices. Graphene has a much lower capacitance than the theoretical capacitance of 550 F g(-1) for supercapacitors and 744 mA h g(-1) for lithium ion batteries. The macroporous nature of graphene limits its volumetric energy density and the low packing density of graphene-based electrodes prevents its use in commercial applications. Increases in the capacity, energy density and power density of electroactive graphene materials are strongly dependent on their microstructural properties, such as the number of defects, stacking, the use of composite materials, conductivity, the specific surface area and the packing density. The structural design of graphene electrode materials is achieved via six main strategies: the design of non-stacking and three-dimensional graphene; the synthesis of highly packed graphene; the production of graphene with a high specific surface area and high conductivity; the control of defects; functionalization with O, N, B or P heteroatoms; and the formation of graphene composites. These methodologies of structural design are needed for fast electrical charge storage/transfer and the transport of electrolyte ions (Li(+), H(+), K(+), Na(+)) in graphene electrodes. We critically review state-of-the-art progress in the optimization of the electrochemical performance of graphene-based electrode materials. The structure of graphene needs to be designed to develop novel electrochemical energy storage devices that approach the theoretical charge limit of graphene and to deliver electrical energy rapidly and efficiently.

Hydrogenated TiO2 Thin Film for Accelerating Electron Transport in Highly Efficient Planar Perovskite Solar Cells.

PubMed

Yao, Xin; Liang, Junhui; Li, Yuelong; Luo, Jingshan; Shi, Biao; Wei, Changchun; Zhang, Dekun; Li, Baozhang; Ding, Yi; Zhao, Ying; Zhang, Xiaodan

2017-10-01

Intensive studies on low-temperature deposited electron transport materials have been performed to improve the efficiency of n-i-p type planar perovskite solar cells to extend their application on plastic and multijunction device architectures. Here, a TiO 2 film with enhanced conductivity and tailored band edge is prepared by magnetron sputtering at room temperature by hydrogen doping (HTO), which accelerates the electron extraction from perovskite photoabsorber and reduces charge transfer resistance, resulting in an improved short circuit current density and fill factor. The HTO film with upward shifted Fermi level guarantees a smaller loss on V OC and facilitates the growth of high-quality absorber with much larger grains and more uniform size, leading to devices with negligible hysteresis. In comparison with the pristine TiO 2 prepared without hydrogen doping, the HTO-based device exhibits a substantial performance enhancement leading to an efficiency of 19.30% and more stabilized photovoltaic performance maintaining 93% of its initial value after 300 min continuous illumination in the glove box. These properties permit the room-temperature magnetron sputtered HTO film as a promising electron transport material for flexible and tandem perovskite solar cell in the future.

Photopolymers for holographic optical elements in astronomy

NASA Astrophysics Data System (ADS)

Zanutta, A.; Orselli, E.; Fäcke, T.; Bianco, A.

2017-05-01

Holographic Optical Elements (HOEs) cover nowadays a relevant position as dispersing elements in astronomical spectrographs because each astronomical observation could take advantage of specific devices with features tailored for achieving the best performances. The design and manufacturing of highly efficient and reliable dispersive elements require photosensitive materials as recording substrate where it is possible to precisely control the parameters that define the efficiency response (namely both the refractive index modulation and the film thickness). The most promising materials in this field are the photopolymers because, beside the ability to provide the tuning feature, they bring also advantages such as self-developing, high refractive index modulation and ease of use thanks to their simple thin structure, which is insensitive from the external environment. In particular, Bayfol HX photopolymers were characterized with the purpose to use them as new material for astronomical Volume Phase Holographic Gratings. We designed and manufactured VPHGs for astronomical instrumentation and we demonstrated how photopolymers are reliable holographic materials for making astronomical devices with performances comparable to those provided by VPHGs based on Dichromated Gelatins (DCGs), but with a much simpler production process. Moreover, the versatility of these materials allowed us to propose and realize novel architectures of the spectroscopic dispersive elements. A compact and unique single prism device was realized for a FOSC spectrograph and new multi-layered devices are proposed, stacking VPHGs one on top of the other to obtain many spectra in the instrument's detector, with advantages as increase of resolution and signal to noise ratio with respect to the classical single dispersive element.

Enhancing electronic and optoelectronic performances of tungsten diselenide by plasma treatment.

PubMed

Xie, Yuan; Wu, Enxiu; Hu, Ruixue; Qian, Shuangbei; Feng, Zhihong; Chen, Xuejiao; Zhang, Hao; Xu, Linyan; Hu, Xiaodong; Liu, Jing; Zhang, Daihua

2018-06-21

Transition metal dichalcogenides (TMDCs) have recently become spotlighted as nanomaterials for future electronic and optoelectronic devices. In this work, we develop an effective approach to enhance the electronic and optoelectronic performances of WSe2-based devices by N2O plasma treatment. The hole mobility and sheet density increase by 2 and 5 orders of magnitude, reaching 110 cm2 V-1 s-1 and 2.2 × 1012 cm-2, respectively, after the treatment. At the same time, the contact resistance (Rc) between WSe2 and its metal electrode drop by 5 orders of magnitude from 1.0 GΩ μm to 28.4 kΩ μm. The WSe2 photoconductor exhibits superior performance with high responsivity (1.5 × 105 A W-1), short response time (<2 ms), high detectivity (3.6 × 1013 Jones) and very large photoconductive gain (>106). We have also built a lateral p-n junction on a single piece of WSe2 flake by selective plasma exposure. The junction reaches an exceedingly high rectifying ratio of 106, an excellent photoresponsivity of 2.49 A W-1 and a fast response of 8 ms. The enhanced optoelectronic performance is attributed to band-engineering through the N2O plasma treatment, which can potentially serve as an effective and versatile approach for device engineering and optimization in a wide range of electronic and optoelectronic devices based on 2D materials.

Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials.

PubMed

Zhou, Li; Mao, Jingyu; Ren, Yi; Han, Su-Ting; Roy, Vellaisamy A L; Zhou, Ye

2018-03-01

Following the trend of miniaturization as per Moore's law, and facing the strong demand of next-generation electronic devices that should be highly portable, wearable, transplantable, and lightweight, growing endeavors have been made to develop novel flexible data storage devices possessing nonvolatile ability, high-density storage, high-switching speed, and reliable endurance properties. Nonvolatile organic data storage devices including memory devices on the basis of floating-gate, charge-trapping, and ferroelectric architectures, as well as organic resistive memory are believed to be favorable candidates for future data storage applications. In this Review, typical information on device structure, memory characteristics, device operation mechanisms, mechanical properties, challenges, and recent progress of the above categories of flexible data storage devices based on organic nanoscaled materials is summarized. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Transistor and memory devices based on novel organic and biomaterials

NASA Astrophysics Data System (ADS)

Tseng, Jia-Hung

Organic semiconductor devices have aroused considerable interest because of the enormous potential in many technological applications. Organic electroluminescent devices have been extensively applied in display technology. Rapid progress has also been made in transistor and memory devices. This thesis considers aspects of the transistor based on novel organic single crystals and memory devices using hybrid nanocomposites comprising polymeric/inorganic nanoparticles, and biomolecule/quantum dots. Organic single crystals represent highly ordered structures with much less imperfections compared to amorphous thin films for probing the intrinsic charge transport in transistor devices. We demonstrate that free-standing, thin organic single crystals with natural flexing ability can be fabricated as flexible transistors. We study the surface properties of the organic crystals to determine a nearly perfect surface leading to high performance transistors. The flexible transistors can maintain high performance under reversible bending conditions. Because of the high quality crystal technique, we further develop applications on organic complementary circuits and organic single crystal photovoltaics. In the second part, two aspects of memory devices are studied. We examine the charge transfer process between conjugated polymers and metal nanoparticles. This charge transfer process is essential for the conductance switching in nanoseconds to induce the memory effect. Under the reduction condition, the charge transfer process is eliminated as well as the memory effect, raising the importance of coupling between conjugated systems and nanoparticle accepters. The other aspect of memory devices focuses on the interaction of virus biomolecules with quantum dots or metal nanoparticles in the devices. We investigate the impact of memory function on the hybrid bio-inorganic system. We perform an experimental analysis of the charge storage activation energy in tobacco mosaic virus with platinum nanoparticles. It is established that the effective barrier height in the materials systems needs to be further engineered in order to have sufficiently long retention times. Finally other novel architectures such as negative differential resistance devices and high density memory arrays are investigated for their influence on memory technology.

Optical recording materials

NASA Astrophysics Data System (ADS)

Savant, Gajendra D.; Jannson, Joanna L.

1991-07-01

The increased emphasis on speed of operation, wavelength selectivity, compactness, and ruggedization has focused a great deal of attention on the solutions offered by all-optic devices and by hybrid electro-optic systems. In fact, many photonic devices are being considered for use as partial replacements for electronic systems. Optical components, which include modulators, switches, 3-D memory storage devices, wavelength division multiplexers, holographic optical elements, and others, are examples of such devices. The success or failure of these modern optical devices depends, to a great extent, on the performance and survivability of the optical materials used. This is particularly true for volume holographic filters, organic memory media, second- and third-order nonlinear material-based processors and neural networks. Due to the critical importance of these materials and their lack of availability, Physical Optics Corporation (POC) undertook a global advanced optical materials program which has enabled it to introduce several optical devices, based on the new and improved materials which will be described in this article.

Synthesis, properties and applications of 2D non-graphene materials.

PubMed

Wang, Feng; Wang, Zhenxing; Wang, Qisheng; Wang, Fengmei; Yin, Lei; Xu, Kai; Huang, Yun; He, Jun

2015-07-24

As an emerging class of new materials, two-dimensional (2D) non-graphene materials, including layered and non-layered, and their heterostructures are currently attracting increasing interest due to their promising applications in electronics, optoelectronics and clean energy. In contrast to traditional semiconductors, such as Si, Ge and III-V group materials, 2D materials show significant merits of ultrathin thickness, very high surface-to-volume ratio, and high compatibility with flexible devices. Owing to these unique properties, while scaling down to ultrathin thickness, devices based on these materials as well as artificially synthetic heterostructures exhibit novel and surprising functions and performances. In this review, we aim to provide a summary on the state-of-the-art research activities on 2D non-graphene materials. The scope of the review will cover the preparation of layered and non-layered 2D materials, construction of 2D vertical van der Waals and lateral ultrathin heterostructures, and especially focus on the applications in electronics, optoelectronics and clean energy. Moreover, the review is concluded with some perspectives on the future developments in this field.

III-V HEMTs: low-noise devices for high-frequency applications

NASA Astrophysics Data System (ADS)

Mateos, Javier

2003-05-01

With the recent development of broadband and satellite communications, one of the main engines for the advance of modern Microelectronics is the fabrication of devices with increasing cutoff frequency and lowest possible level of noise. Even if heterojunction bipolar devices (HBTs) have reached a good frequency performance, the top end of high frequency low-noise applications is monopolized by unipolar devices, mainly HEMTs (High Electron Mobility Transistors). In particular, within the vast family of heterojunction devices, the best results ever reported in the W-band have been obtained with InP based HEMTs using the AlInAs/InGaAs material system, improving those of usual GaAs based pseudomorphic HEMTs. In field effect devices, the reduction of the gate length (Lg) up to the technological limit is the main way to achieve the maximum performances. But the design of the devices is not so simple, when reducing the gate length it is convenient to keep constant the aspect ratio (gate length over gate-to-channel distance) in order to limit short channel effects. This operation can lead to the appearance of other unwanted effects, like the depletion of the channel due to the surface potential or the tunneling of electrons from the channel to the gate. Therefore, in order to optimize the high frequency or the low-noise behavior of the devices (that usually can not be reached together) not only the gate-to-channel distance must be chosen carefully, but also many other technological parameters (both geometrical and electrical): composition of materials, width of the device, length, depth and position of the recess, thickness and doping of the different layers, etc. Historically, these parameters have been optimized by classical simulation techniques or, when such simulations are not physically applicable, by the expensive 'test and error' procedure. With the use of computer simulation, the design optimization can be made in a short time and with no money spent. However, classical modelling of electronic devices meets important difficulties when dealing with advanced transistors, mainly due to their small size, and the Monte Carlo technique appears as the only possible choice

Silicone-Based Triboelectric Nanogenerator for Water Wave Energy Harvesting.

PubMed

Xiao, Tian Xiao; Jiang, Tao; Zhu, Jian Xiong; Liang, Xi; Xu, Liang; Shao, Jia Jia; Zhang, Chun Lei; Wang, Jie; Wang, Zhong Lin

2018-01-31

Triboelectric nanogenerator (TENG) has been proven to be efficient for harvesting water wave energy, which is one of the most promising renewable energy sources. In this work, a TENG with a silicone rubber/carbon black composite electrode was designed for converting the water wave energy into electricity. The silicone-based electrode with a soft texture provides a better contact with the dielectric film. Furthermore, a spring structure is introduced to transform low-frequency water wave motions into high-frequency vibrations. They together improve the output performance and efficiency of TENG. The output performances of TENGs are further enhanced by optimizing the triboelectric material pair and tribo-surface area. A spring-assisted TENG device with the segmented silicone rubber-based electrode structure was sealed into a waterproof box, which delivers a maximum power density of 2.40 W m -3 , as triggered by the water waves. The present work provides a new strategy for fabricating high-performance TENG devices by coupling flexible electrodes and spring structure for harvesting water wave energy.

Organic printed photonics: From microring lasers to integrated circuits

PubMed Central

Zhang, Chuang; Zou, Chang-Ling; Zhao, Yan; Dong, Chun-Hua; Wei, Cong; Wang, Hanlin; Liu, Yunqi; Guo, Guang-Can; Yao, Jiannian; Zhao, Yong Sheng

2015-01-01

A photonic integrated circuit (PIC) is the optical analogy of an electronic loop in which photons are signal carriers with high transport speed and parallel processing capability. Besides the most frequently demonstrated silicon-based circuits, PICs require a variety of materials for light generation, processing, modulation, and detection. With their diversity and flexibility, organic molecular materials provide an alternative platform for photonics; however, the versatile fabrication of organic integrated circuits with the desired photonic performance remains a big challenge. The rapid development of flexible electronics has shown that a solution printing technique has considerable potential for the large-scale fabrication and integration of microsized/nanosized devices. We propose the idea of soft photonics and demonstrate the function-directed fabrication of high-quality organic photonic devices and circuits. We prepared size-tunable and reproducible polymer microring resonators on a wafer-scale transparent and flexible chip using a solution printing technique. The printed optical resonator showed a quality (Q) factor higher than 4 × 105, which is comparable to that of silicon-based resonators. The high material compatibility of this printed photonic chip enabled us to realize low-threshold microlasers by doping organic functional molecules into a typical photonic device. On an identical chip, this construction strategy allowed us to design a complex assembly of one-dimensional waveguide and resonator components for light signal filtering and optical storage toward the large-scale on-chip integration of microscopic photonic units. Thus, we have developed a scheme for soft photonic integration that may motivate further studies on organic photonic materials and devices. PMID:26601256

Organic printed photonics: From microring lasers to integrated circuits.

PubMed

Zhang, Chuang; Zou, Chang-Ling; Zhao, Yan; Dong, Chun-Hua; Wei, Cong; Wang, Hanlin; Liu, Yunqi; Guo, Guang-Can; Yao, Jiannian; Zhao, Yong Sheng

2015-09-01

A photonic integrated circuit (PIC) is the optical analogy of an electronic loop in which photons are signal carriers with high transport speed and parallel processing capability. Besides the most frequently demonstrated silicon-based circuits, PICs require a variety of materials for light generation, processing, modulation, and detection. With their diversity and flexibility, organic molecular materials provide an alternative platform for photonics; however, the versatile fabrication of organic integrated circuits with the desired photonic performance remains a big challenge. The rapid development of flexible electronics has shown that a solution printing technique has considerable potential for the large-scale fabrication and integration of microsized/nanosized devices. We propose the idea of soft photonics and demonstrate the function-directed fabrication of high-quality organic photonic devices and circuits. We prepared size-tunable and reproducible polymer microring resonators on a wafer-scale transparent and flexible chip using a solution printing technique. The printed optical resonator showed a quality (Q) factor higher than 4 × 10(5), which is comparable to that of silicon-based resonators. The high material compatibility of this printed photonic chip enabled us to realize low-threshold microlasers by doping organic functional molecules into a typical photonic device. On an identical chip, this construction strategy allowed us to design a complex assembly of one-dimensional waveguide and resonator components for light signal filtering and optical storage toward the large-scale on-chip integration of microscopic photonic units. Thus, we have developed a scheme for soft photonic integration that may motivate further studies on organic photonic materials and devices.

Ultraviolet light emitting diodes and bio-aerosol sensing

NASA Astrophysics Data System (ADS)

Davitt, Kristina M.

Recent interest in compact ultraviolet (UV) light emitters has produced advances in material quality and device performance from aluminum-rich alloys of the nitride semiconductor system. The epitaxial growth of device structures from this material poses remarkable challenges, and state-of-the-art in semiconductor UV light sources at wavelengths shorter than 350 nm is currently limited to LEDs. A portion of the work presented in this thesis involves the design and characterization of UV LED structures, with particular focus on sub-300 nm LEDs which have only been demonstrated within the last four years. Emphasis has been placed on the integration of early devices with modest efficiencies and output powers into a practical, fluorescence-based bio-sensing instrument. The quality of AlGaInN and AlGaN-based materials is characterized by way of the performance of 340 nm and 290 nm LEDs respectively. A competitive level of device operation is achieved, although much room remains for improvement in the efficiency of light emission from this material system. A preliminary investigation of 300 nm LEDs grown on bulk AIN shows promising electrical and optical characteristics, and illustrates the numerous advantages that this native substrate offers to the epitaxy of wide bandgap nitride semiconductors. The application of UV LEDs to the field of bio-aerosol sensing is pursued by constructing an on-the-fly fluorescence detection system. A linear array of UV LEDs is designed and implemented, and the capability of test devices to excite native fluorescence from bacterial spores is established. In order to fully capitalize on the reduction in size afforded by LEDs, effort is invested in re-engineering the remaining sensor components. Operation of a prototype system for physically sorting bio-aerosols based on fluorescence spectra acquired in real-time from single airborne particles excited by a UV-LED array is demonstrated using the bio-fluorophores NADH and tryptophan. Sensor performance is shown to be ultimately linked to the material quality of high aluminum fraction nitrides, and is expected to show progress as this field matures.

Porous honeycomb structures formed from interconnected MnO2 sheets on CNT-coated substrates for flexible all-solid-state supercapacitors

NASA Astrophysics Data System (ADS)

Ko, Wen-Yin; Chen, You-Feng; Lu, Ke-Ming; Lin, Kuan-Jiuh

2016-01-01

The use of lightweight and easily-fabricated MnO2/carbon nanotube (CNT)-based flexible networks as binder-free electrodes and a polyvinyl alcohol/H2SO4 electrolyte for the formation of stretchable solid-state supercapacitors was examined. The active electrodes were fabricated from 3D honeycomb porous MnO2 assembled from cross-walled and interconnected sheet-architectural MnO2 on CNT-based plastic substrates (denoted as honeycomb MnO2/CNT textiles).These substrates were fabricated through a simple two-step procedure involving the coating of multi-walled carbon nanotubes (MWCNTs) onto commercial textiles by a dipping-drying process and subsequent electrodeposition of the interconnected MnO2 sheets onto the MWCNT-coated textile. With such unique MnO2 architectures integrated onto CNT flexible films, good performance was achieved with a specific capacitance of 324 F/g at 0.5 A/g. A maximum energy density of 7.2 Wh/kg and a power density as high as 3.3 kW/kg were exhibited by the honeycomb MnO2/CNT network device, which is comparable to the performance of other carbon-based and metal oxide/carbon-based solid-state supercapacitor devices. Specifically, the long-term cycling stability of this material is excellent, with almost no loss of its initial capacitance and good Coulombic efficiency of 82% after 5000 cycles. These impressive results identify these materials as a promising candidate for use in environmentally friendly, low-cost, and high-performance flexible energy-storage devices.

Porous honeycomb structures formed from interconnected MnO2 sheets on CNT-coated substrates for flexible all-solid-state supercapacitors

PubMed Central

Ko, Wen-Yin; Chen, You-Feng; Lu, Ke-Ming; Lin, Kuan-Jiuh

2016-01-01

The use of lightweight and easily-fabricated MnO2/carbon nanotube (CNT)-based flexible networks as binder-free electrodes and a polyvinyl alcohol/H2SO4 electrolyte for the formation of stretchable solid-state supercapacitors was examined. The active electrodes were fabricated from 3D honeycomb porous MnO2 assembled from cross-walled and interconnected sheet-architectural MnO2 on CNT-based plastic substrates (denoted as honeycomb MnO2/CNT textiles).These substrates were fabricated through a simple two-step procedure involving the coating of multi-walled carbon nanotubes (MWCNTs) onto commercial textiles by a dipping-drying process and subsequent electrodeposition of the interconnected MnO2 sheets onto the MWCNT-coated textile. With such unique MnO2 architectures integrated onto CNT flexible films, good performance was achieved with a specific capacitance of 324 F/g at 0.5 A/g. A maximum energy density of 7.2 Wh/kg and a power density as high as 3.3 kW/kg were exhibited by the honeycomb MnO2/CNT network device, which is comparable to the performance of other carbon-based and metal oxide/carbon-based solid-state supercapacitor devices. Specifically, the long-term cycling stability of this material is excellent, with almost no loss of its initial capacitance and good Coulombic efficiency of 82% after 5000 cycles. These impressive results identify these materials as a promising candidate for use in environmentally friendly, low-cost, and high-performance flexible energy-storage devices. PMID:26726724

Naphthalene Diimide Based n-Type Conjugated Polymers as Efficient Cathode Interfacial Materials for Polymer and Perovskite Solar Cells.

PubMed

Jia, Tao; Sun, Chen; Xu, Rongguo; Chen, Zhiming; Yin, Qingwu; Jin, Yaocheng; Yip, Hin-Lap; Huang, Fei; Cao, Yong

2017-10-18

A series of naphthalene diimide (NDI) based n-type conjugated polymers with amino-functionalized side groups and backbones were synthesized and used as cathode interlayers (CILs) in polymer and perovskite solar cells. Because of controllable amine side groups, all the resulting polymers exhibited distinct electronic properties such as oxidation potential of side chains, charge carrier mobilities, self-doping behaviors, and interfacial dipoles. The influences of the chemical variation of amine groups on the cathode interfacial effects were further investigated in both polymer and perovskite solar cells. We found that the decreased electron-donating property and enhanced steric hindrance of amine side groups substantially weaken the capacities of altering the work function of the cathode and trap passivation of the perovskite film, which induced ineffective interfacial modifications and declining device performance. Moreover, with further improvement of the backbone design through the incorporation of a rigid acetylene spacer, the resulting polymers substantially exhibited an enhanced electron-transporting property. Upon use as CILs, high power conversion efficiencies (PCEs) of 10.1% and 15.2% were, respectively, achieved in polymer and perovskite solar cells. Importantly, these newly developed n-type polymers were allowed to be processed over a broad thickness range of CILs in photovoltaic devices, and a prominent PCE of over 8% for polymer solar cells and 13.5% for perovskite solar cells can be achieved with the thick interlayers over 100 nm, which is beneficial for roll-to-roll coating processes. Our findings contribute toward a better understanding of the structure-performance relationship between CIL material design and solar cell performance, and provide important insights and guidelines for the design of high-performance n-type CIL materials for organic and perovskite optoelectronic devices.

TaOx-based resistive switching memories: prospective and challenges

PubMed Central

2013-01-01

Resistive switching memories (RRAMs) are attractive for replacement of conventional flash in the future. Although different switching materials have been reported; however, low-current operated devices (<100 μA) are necessary for productive RRAM applications. Therefore, TaOx is one of the prospective switching materials because of two stable phases of TaO2 and Ta2O5, which can also control the stable low- and high-resistance states. Long program/erase endurance and data retention at high temperature under low-current operation are also reported in published literature. So far, bilayered TaOx with inert electrodes (Pt and/or Ir) or single layer TaOx with semi-reactive electrodes (W and Ti/W or Ta/Pt) is proposed for real RRAM applications. It is found that the memory characteristics at current compliance (CC) of 80 μA is acceptable for real application; however, data are becoming worst at CC of 10 μA. Therefore, it is very challenging to reduce the operation current (few microampere) of the RRAM devices. This study investigates the switching mode, mechanism, and performance of low-current operated TaOx-based devices as compared to other RRAM devices. This topical review will not only help for application of TaOx-based nanoscale RRAM devices but also encourage researcher to overcome the challenges in the future production. PMID:24107610

Hybrid Organic-Inorganic Perovskite Photodetectors.

PubMed

Tian, Wei; Zhou, Huanping; Li, Liang

2017-11-01

Hybrid organic-inorganic perovskite materials garner enormous attention for a wide range of optoelectronic devices. Due to their attractive optical and electrical properties including high optical absorption coefficient, high carrier mobility, and long carrier diffusion length, perovskites have opened up a great opportunity for high performance photodetectors. This review aims to give a comprehensive summary of the significant results on perovskite-based photodetectors, focusing on the relationship among the perovskite structures, device configurations, and photodetecting performances. An introduction of recent progress in various perovskite structure-based photodetectors is provided. The emphasis is placed on the correlation between the perovskite structure and the device performance. Next, recent developments of bandgap-tunable perovskite and hybrid photodetectors built from perovskite heterostructures are highlighted. Then, effective approaches to enhance the stability of perovskite photodetector are presented, followed by the introduction of flexible and self-powered perovskite photodetectors. Finally, a summary of the previous results is given, and the major challenges that need to be addressed in the future are outlined. A comprehensive summary of the research status on perovskite photodetectors is hoped to push forward the development of this field. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

FDTD analysis of Aluminum/a-Si:H surface plasmon waveguides

NASA Astrophysics Data System (ADS)

Lourenço, Paulo; Fantoni, Alessandro; Fernandes, Miguel; Vygranenko, Yuri; Vieira, Manuela

2018-02-01

The large majority of surface plasmon resonance based devices use noble metals, namely gold or silver, in their manufacturing process. These metals present low resistivity, which leads to low optical losses in the visible and near infrared spectrum ranges. Gold shows high environmental stability, which is essential for long-term operation, and silver's lower stability can be overcome through the deposition of an alumina layer, for instance. However, their high cost is a limiting factor if the intended target is large scale manufacturing. In this work, it is considered a cost-effective approach through the selection of aluminum as the plasmonic material and hydrogenated amorphous silicon instead of its crystalline counterpart. This surface plasmon resonance device relies on Fano resonance to improve its response to refractive index deviations of the surrounding environment. Fano resonance is highly sensitive to slight changes of the medium, hence the reason we incorporated this interference phenomenon in the proposed device. We report the results obtained when conducting Finite-Difference Time Domain algorithm based simulations on this metal-dielectric-metal structure when the active metal is aluminum, gold and silver. Then, we evaluate their sensitivity, detection accuracy and resolution, and the obtained results for our proposed device show good linearity and similar parameter performance as the ones obtained when using gold or silver as plasmonic materials.

Recent Development of Advanced Electrode Materials by Atomic Layer Deposition for Electrochemical Energy Storage.

PubMed

Guan, Cao; Wang, John

2016-10-01

Electrode materials play a decisive role in almost all electrochemical energy storage devices, determining their overall performance. Proper selection, design and fabrication of electrode materials have thus been regarded as one of the most critical steps in achieving high electrochemical energy storage performance. As an advanced nanotechnology for thin films and surfaces with conformal interfacial features and well controllable deposition thickness, atomic layer deposition (ALD) has been successfully developed for deposition and surface modification of electrode materials, where there are considerable issues of interfacial and surface chemistry at atomic and nanometer scale. In addition, ALD has shown great potential in construction of novel nanostructured active materials that otherwise can be hardly obtained by other processing techniques, such as those solution-based processing and chemical vapor deposition (CVD) techniques. This review focuses on the recent development of ALD for the design and delivery of advanced electrode materials in electrochemical energy storage devices, where typical examples will be highlighted and analyzed, and the merits and challenges of ALD for applications in energy storage will also be discussed.

Recent Development of Advanced Electrode Materials by Atomic Layer Deposition for Electrochemical Energy Storage

PubMed Central

2016-01-01

Electrode materials play a decisive role in almost all electrochemical energy storage devices, determining their overall performance. Proper selection, design and fabrication of electrode materials have thus been regarded as one of the most critical steps in achieving high electrochemical energy storage performance. As an advanced nanotechnology for thin films and surfaces with conformal interfacial features and well controllable deposition thickness, atomic layer deposition (ALD) has been successfully developed for deposition and surface modification of electrode materials, where there are considerable issues of interfacial and surface chemistry at atomic and nanometer scale. In addition, ALD has shown great potential in construction of novel nanostructured active materials that otherwise can be hardly obtained by other processing techniques, such as those solution‐based processing and chemical vapor deposition (CVD) techniques. This review focuses on the recent development of ALD for the design and delivery of advanced electrode materials in electrochemical energy storage devices, where typical examples will be highlighted and analyzed, and the merits and challenges of ALD for applications in energy storage will also be discussed. PMID:27840793

Embedding solar cell materials with on-board integrated energy storage for load-leveling and dark power delivery (Presentation Recording)

NASA Astrophysics Data System (ADS)

Pint, Cary L.; Westover, Andrew S.; Cohn, Adam P.; Erwin, William R.; Share, Keith; Metke, Thomas; Bardhan, Rizia

2015-10-01

This work will discuss our recent advances focused on integrating high power energy storage directly into the native materials of both conventional photovoltaics (PV) and dye-sensitized solar cells (DSSCs). In the first case (PV), we demonstrate the ability to etch high surface-area porous silicon charge storage interfaces directly into the backside of a conventional polycrystalline silicon photovoltaic device exhibiting over 14% efficiency. These high surface area materials are then coupled with solid-state ionic liquid-polymer electrolytes to produce solid-state fully integrated devices where the PV device can directly inject charge into an on-board supercapacitor that can be separately discharged under dark conditions with a Coulombic efficiency of 84%. In a similar manner, we further demonstrate that surface engineered silicon materials can be utilized to replace Pt counterelectrodes in conventional DSSC energy conversion devices. As the silicon counterelectrodes rely strictly on surface Faradaic chemical reactions with the electrolyte on one side of the wafer electrode, we demonstrate double-sided processing of electrodes that enables dual-function of the material for simultaneous energy storage and conversion, each on opposing sides. In both of these devices, we demonstrate the ability to produce an all-silicon coupled energy conversion and storage system through the common ability to convert unused silicon in solar cells into high power silicon-based supercapacitors. Beyond the proof-of-concept design and performance of this integrated solar-storage system, this talk will conclude with a brief discussion of the hurdles and challenges that we envision for this emerging area both from a fundamental and technological viewpoint.

High-Performance Biomass-Based Flexible Solid-State Supercapacitor Constructed of Pressure-Sensitive Lignin-Based and Cellulose Hydrogels.

PubMed

Peng, Zhiyuan; Zou, Yubo; Xu, Shiqi; Zhong, Wenbin; Yang, Wantai

2018-06-19

Employing renewable, earth-abundant, environmentally friendly, low-cost natural materials to design flexible supercapacitors (FSCs) as energy storage devices in wearable/portable electronics represents the global perspective to build sustainable and green society. Chemically stable and flexible cellulose and electroactive lignin have been employed to construct a biomass-based FSC for the first time. The FSC was assembled using lignosulfonate/single-walled carbon nanotube HNO 3 (Lig/SWCNT HNO 3 ) pressure-sensitive hydrogels as electrodes and cellulose hydrogels as an electrolyte separator. The assembled biomass-based FSC shows high specific capacitance (292 F g -1 at a current density of 0.5 A g -1 ), excellent rate capability, and an outstanding energy density of 17.1 W h kg -1 at a power density of 324 W kg -1 . Remarkably, the FSC presents outstanding electrochemical stability even suffering 1000 bending cycles. Such excellent flexibility, stability, and electrochemical performance enable the designed biomass-based FSCs as prominent candidates in applications of wearable electronic devices.

Pseudomorphic Narrow Gap Materials for High Performance Devices

DTIC Science & Technology

1993-04-14

research under this program is ito obtain hiigh quality pseudomorphic (strained) narrow gap materials for high performance device applicatjons During...1993 ELECTE """ ’I ~01lG:9395 APR21 W93 Dr. Max N. Yoder Scientific Officer, Code 114SS Office of Naval Research 800 N. Quincy Street Arlington, VA...Mr. V. Morano - w/cy each/ ...- Administrative Grants Officer Office of Naval Research . r. - Resident Representative, N6Z9g7 -- _ z 33 Third Avenue

High-performance green flexible electronics based on biodegradable cellulose nanofibril paper

Treesearch

Yei Hwan Jung; Tzu-Hsuan Chang; Huilong Zhang; Chunhua Yao; Qifeng Zheng; Vina W. Yang; Hongyi Mi; Munho Kim; Sang June Cho; Dong-Wook Park; Hao Jiang; Juhwan Lee; Yijie Qiu; Weidong Zhou; Zhiyong Cai; Shaoqin Gong; Zhenqiang Ma

2015-01-01

Today’s consumer electronics, such as cell phones, tablets and other portable electronic devices, are typically made of non-renewable, non-biodegradable, and sometimes potentially toxic (for example, gallium arsenide) materials. These consumer electronics are frequently upgraded or discarded, leading to serious environmental contamination. Thus, electronic systems...

Beta-manganese dioxide nanorods for sufficient high-temperature electromagnetic interference shielding in X-band

NASA Astrophysics Data System (ADS)

Song, Wei-Li; Cao, Mao-Sheng; Hou, Zhi-Ling; Lu, Ming-Ming; Wang, Chan-Yuan; Yuan, Jie; Fan, Li-Zhen

2014-09-01

As the development of electronic and communication technology, electromagnetic interference (EMI) shielding and attenuation is an effective strategy to ensure the operation of the electronic devices. Among the materials for high-performance shielding in aerospace industry and related high-temperature working environment, the thermally stable metal oxide semiconductors with narrow band gap are promising candidates. In this work, beta-manganese dioxide ( β-MnO2) nanorods were synthesized by a hydrothermal method. The bulk materials of the β-MnO2 were fabricated to evaluate the EMI shielding performance in the temperature range of 20-500 °C between 8.2 and 12.4 GHz (X-band). To understand the mechanisms of high-temperature EMI shielding, the contribution of reflection and absorption to EMI shielding was discussed based on temperature-dependent electrical properties and complex permittivity. Highly sufficient shielding effectiveness greater than 20 dB was observed over all the investigated range, suggesting β-MnO2 nanorods as promising candidates for high-temperature EMI shielding. The results have also established a platform to develop high-temperature EMI shielding materials based on nanoscale semiconductors.

Sorbent Film-Coated Passive Samplers for Explosives Vapour Detection Part A: Materials Optimisation and Integration with Analytical Technologies.

PubMed

McEneff, Gillian L; Murphy, Bronagh; Webb, Tony; Wood, Dan; Irlam, Rachel; Mills, Jim; Green, David; Barron, Leon P

2018-04-11

A new thin-film passive sampler is presented as a low resource dependent and discrete continuous monitoring solution for explosives-related vapours. Using 15 mid-high vapour pressure explosives-related compounds as probes, combinations of four thermally stable substrates and six film-based sorbents were evaluated. Meta-aramid and phenylene oxide-based materials showed the best recoveries from small voids (~70%). Analysis was performed using liquid chromatography-high resolution accurate mass spectrometry which also enabled tentative identification of new targets from the acquired data. Preliminary uptake kinetics experiments revealed plateau concentrations on the device were reached between 3-5 days. Compounds used in improvised explosive devices, such as triacetone triperoxide, were detected within 1 hour and were stably retained by the sampler for up to 7 days. Sampler performance was consistent for 22 months after manufacture. Lastly, its direct integration with currently in-service explosives screening equipment including ion mobility spectrometry and thermal desorption mass spectrometry is presented. Following exposure to several open environments and targeted interferences, sampler performance was subsequently assessed and potential interferences identified. High-security building and area monitoring for concealed explosives using such cost-effective and discrete passive samplers can add extra assurance to search routines while minimising any additional burden on personnel or everyday site operation.

GaN-based light-emitting diodes on various substrates: a critical review.

PubMed

Li, Guoqiang; Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Wang, Haiyan; Lin, Zhiting; Zhou, Shizhong

2016-05-01

GaN and related III-nitrides have attracted considerable attention as promising materials for application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present, sapphire is still the most popular commercial substrate for epitaxial growth of GaN-based LEDs. However, due to its relatively large lattice mismatch with GaN and low thermal conductivity, sapphire is not the most ideal substrate for GaN-based LEDs. Therefore, in order to obtain high-performance and high-power LEDs with relatively low cost, unconventional substrates, which are of low lattice mismatch with GaN, high thermal conductivity and low cost, have been tried as substitutes for sapphire. As a matter of fact, it is not easy to obtain high-quality III-nitride films on those substrates for various reasons. However, by developing a variety of techniques, distincts progress has been made during the past decade, with high-performance LEDs being successfully achieved on these unconventional substrates. This review focuses on state-of-the-art high-performance GaN-based LED materials and devices on unconventional substrates. The issues involved in the growth of GaN-based LED structures on each type of unconventional substrate are outlined, and the fundamental physics behind these issues is detailed. The corresponding solutions for III-nitride growth, defect control, and chip processing for each type of unconventional substrate are discussed in depth, together with a brief introduction to some newly developed techniques in order to realize LED structures on unconventional substrates. This is very useful for understanding the progress in this field of physics. In this review, we also speculate on the prospects for LEDs on unconventional substrates.

High performance superconducting devices enabled by three dimensionally ordered nanodots and/or nanorods

DOEpatents

Goyal, Amit

2013-09-17

Novel articles and methods to fabricate same with self-assembled nanodots and/or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic and electrooptical devices is disclosed. Self-assembled nanodots and/or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.

High performance electrical, magnetic, electromagnetic and electrooptical devices enabled by three dimensionally ordered nanodots and nanorods

DOEpatents

Goyal, Amit , Kang; Sukill, [Knoxville, TN

2012-02-21

Novel articles and methods to fabricate same with self-assembled nanodots and/or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic and electrooptical devices is disclosed. Self-assembled nanodots and/or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.

High performance devices enabled by epitaxial, preferentially oriented, nanodots and/or nanorods

DOEpatents

Goyal, Amit [Knoxville, TN

2011-10-11

Novel articles and methods to fabricate same with self-assembled nanodots and/or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic, superconducting and electrooptical devices is disclosed. Self-assembled nanodots and/or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.

High-performance solid-state supercapacitors based on graphene-ZnO hybrid nanocomposites.

PubMed

Li, Zijiong; Zhou, Zhihua; Yun, Gaoqian; Shi, Kai; Lv, Xiaowei; Yang, Baocheng

2013-11-12

In this paper, we report a facile low-cost synthesis of the graphene-ZnO hybrid nanocomposites for solid-state supercapacitors. Structural analysis revealed a homogeneous distribution of ZnO nanorods that are inserted in graphene nanosheets, forming a sandwiched architecture. The material exhibited a high specific capacitance of 156 F g-1 at a scan rate of 5 mV.s-1. The fabricated solid-state supercapacitor device using these graphene-ZnO hybrid nanocomposites exhibits good supercapacitive performance and long-term cycle stability. The improved supercapacitance property of these materials could be ascribed to the increased conductivity of ZnO and better utilization of graphene. These results demonstrate the potential of the graphene-ZnO hybrid nanocomposites as an electrode in high-performance supercapacitors.

High-performance solid-state supercapacitors based on graphene-ZnO hybrid nanocomposites

NASA Astrophysics Data System (ADS)

Li, Zijiong; Zhou, Zhihua; Yun, Gaoqian; Shi, Kai; Lv, Xiaowei; Yang, Baocheng

2013-11-01

In this paper, we report a facile low-cost synthesis of the graphene-ZnO hybrid nanocomposites for solid-state supercapacitors. Structural analysis revealed a homogeneous distribution of ZnO nanorods that are inserted in graphene nanosheets, forming a sandwiched architecture. The material exhibited a high specific capacitance of 156 F g-1 at a scan rate of 5 mV.s-1. The fabricated solid-state supercapacitor device using these graphene-ZnO hybrid nanocomposites exhibits good supercapacitive performance and long-term cycle stability. The improved supercapacitance property of these materials could be ascribed to the increased conductivity of ZnO and better utilization of graphene. These results demonstrate the potential of the graphene-ZnO hybrid nanocomposites as an electrode in high-performance supercapacitors.

High-performance solid-state supercapacitors based on graphene-ZnO hybrid nanocomposites

PubMed Central

2013-01-01

In this paper, we report a facile low-cost synthesis of the graphene-ZnO hybrid nanocomposites for solid-state supercapacitors. Structural analysis revealed a homogeneous distribution of ZnO nanorods that are inserted in graphene nanosheets, forming a sandwiched architecture. The material exhibited a high specific capacitance of 156 F g−1 at a scan rate of 5 mV.s−1. The fabricated solid-state supercapacitor device using these graphene-ZnO hybrid nanocomposites exhibits good supercapacitive performance and long-term cycle stability. The improved supercapacitance property of these materials could be ascribed to the increased conductivity of ZnO and better utilization of graphene. These results demonstrate the potential of the graphene-ZnO hybrid nanocomposites as an electrode in high-performance supercapacitors. PMID:24215772

GaN Initiative for Grid Applications (GIGA)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Turner, George

2015-07-03

For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -evenmore » for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 μm, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and vertical devices were explored, with the conclusion that lateral devices are superior for fundamental thermal reasons, as well as for the demonstration of future generations of monolithic power circuits. As part of the materials and device investigations breakdown mechanisms in GaN-on-Si structures were fully characterized and effective electric field engineering was recognized as critical for achieving even higher voltage operation. Improved device contact technology was demonstrated, including the first gold-free metallizations (to enable processing in CMOS foundries) while maintaining low specific contact resistance needed for high-power operation and 5-order-of magnitude improvement in device leakage currents (essential for high power operation). In addition, initial GaN-on-Si epitaxial growth was performed on 8”/200 mm Si starting substrates.« less

Non-binary Colour Modulation for Display Device Based on Phase Change Materials.

PubMed

Ji, Hong-Kai; Tong, Hao; Qian, Hang; Hui, Ya-Juan; Liu, Nian; Yan, Peng; Miao, Xiang-Shui

2016-12-19

A reflective-type display device based on phase change materials is attractive because of its ultrafast response time and high resolution compared with a conventional display device. This paper proposes and demonstrates a unique display device in which multicolour changing can be achieved on a single device by the selective crystallization of double layer phase change materials. The optical contrast is optimized by the availability of a variety of film thicknesses of two phase change layers. The device exhibits a low sensitivity to the angle of incidence, which is important for display and colour consistency. The non-binary colour rendering on a single device is demonstrated for the first time using optical excitation. The device shows the potential for ultrafast display applications.

Electrochemical energy storage in montmorillonite K10 clay based composite as supercapacitor using ionic liquid electrolyte.

PubMed

Maiti, Sandipan; Pramanik, Atin; Chattopadhyay, Shreyasi; De, Goutam; Mahanty, Sourindra

2016-02-15

Exploring new electrode materials is the key to realize high performance energy storage devices for effective utilization of renewable energy. Natural clays with layered structure and high surface area are prospective materials for electrical double layer capacitors (EDLC). In this work, a novel hybrid composite based on acid-leached montmorillonite (K10), multi-walled carbon nanotube (MWCNT) and manganese dioxide (MnO2) was prepared and its electrochemical properties were investigated by fabricating two-electrode asymmetric supercapacitor cells against activated carbon (AC) using 1.0M tetraethylammonium tetrafluroborate (Et4NBF4) in acetonitrile (AN) as electrolyte. The asymmetric supercapacitors, capable of operating in a wide potential window of 0.0-2.7V, showed a high energy density of 171Whkg(-1) at a power density of ∼1.98kWkg(-1). Such high EDLC performance could possibly be linked to the acid-base interaction of K10 through its surface hydroxyl groups with the tetraethylammonium cation [(C2H5)4N(+) or TEA(+)] of the ionic liquid electrolyte. Even at a very high power density of 96.4kWkg(-1), the cells could still deliver an energy density of 91.1Whkg(-1) exhibiting an outstanding rate capability. The present study demonstrates for the first time, the excellent potential of clay-based composites for high power energy storage device applications. Copyright © 2015 Elsevier Inc. All rights reserved.

Charge plasma based source/drain engineered Schottky Barrier MOSFET: Ambipolar suppression and improvement of the RF performance

NASA Astrophysics Data System (ADS)

Kale, Sumit; Kondekar, Pravin N.

2018-01-01

This paper reports a novel device structure for charge plasma based Schottky Barrier (SB) MOSFET on ultrathin SOI to suppress the ambipolar leakage current and improvement of the radio frequency (RF) performance. In the proposed device, we employ dual material for the source and drain formation. Therefore, source/drain is divided into two parts as main source/drain and source/drain extension. Erbium silicide (ErSi1.7) is used as main source/drain material and Hafnium metal is used as source/drain extension material. The source extension induces the electron plasma in the ultrathin SOI body resulting reduction of SB width at the source side. Similarly, drain extension also induces the electron plasma at the drain side. This significantly increases the SB width due to increased depletion at the drain end. As a result, the ambipolar leakage current can be suppressed. In addition, drain extension also reduces the parasitic capacitances of the proposed device to improve the RF performance. The optimization of length and work function of metal used in the drain extension is performed to achieve improvement in device performance. Moreover, the proposed device makes fabrication simpler, requires low thermal budget and free from random dopant fluctuations.

Optical silicones for use in harsh operating environments

NASA Astrophysics Data System (ADS)

Riegler, Bill; Bruner, Stephen J.; Elgin, Randall

2004-12-01

The optics industry widely uses silcones for various fiber optic cable potting applications and light emitting diode protection. Optics manufacturers know traditional silicone elastomers, gels, thixotropic gels, and fluids not only perform extremely well in high temperature applications, but also offer refractive index matching so that silicones can transmit light with admirable efficiency. However, because environmental conditions may affect a material's performance over time, one must also consider the conditions the device operates in to ensure long-term reliability. External environments may include exposure to a combination of UV light and temperature, while other environments may expose devices to hydrocarbon based fuels. This paper will delve into the chemistry of silicones and functional groups that lend themselves to properties such as temperature, fuel, and radiation resistance to show shy silicone is the material of choice for optic applications under normally harmful forms of exposure. Data will be presented to examine silicone's performance in these environment.

Chalcogenide glass-on-graphene photonics

NASA Astrophysics Data System (ADS)

Lin, Hongtao; Song, Yi; Huang, Yizhong; Kita, Derek; Deckoff-Jones, Skylar; Wang, Kaiqi; Li, Lan; Li, Junying; Zheng, Hanyu; Luo, Zhengqian; Wang, Haozhe; Novak, Spencer; Yadav, Anupama; Huang, Chung-Che; Shiue, Ren-Jye; Englund, Dirk; Gu, Tian; Hewak, Daniel; Richardson, Kathleen; Kong, Jing; Hu, Juejun

2017-12-01

Two-dimensional (2D) materials are of tremendous interest to integrated photonics, given their singular optical characteristics spanning light emission, modulation, saturable absorption and nonlinear optics. To harness their optical properties, these atomically thin materials are usually attached onto prefabricated devices via a transfer process. Here, we present a new route for 2D material integration with planar photonics. Central to this approach is the use of chalcogenide glass, a multifunctional material that can be directly deposited and patterned on a wide variety of 2D materials and can simultaneously function as the light-guiding medium, a gate dielectric and a passivation layer for 2D materials. Besides achieving improved fabrication yield and throughput compared with the traditional transfer process, our technique also enables unconventional multilayer device geometries optimally designed for enhancing light-matter interactions in the 2D layers. Capitalizing on this facile integration method, we demonstrate a series of high-performance glass-on-graphene devices including ultra-broadband on-chip polarizers, energy-efficient thermo-optic switches, as well as graphene-based mid-infrared waveguide-integrated photodetectors and modulators.

Nonlinear optical thin films

NASA Technical Reports Server (NTRS)

Leslie, Thomas M.

1993-01-01

A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film-forming material in a working device is a complex, multifaceted endeavor. It requires close attention to maintaining the optical properties of the electro-optic active portion of the polymer while manipulating the polymer structure to obtain the desired secondary polymer properties.

Flexible Asymmetric Supercapacitor Based on Functionalized Reduced Graphene Oxide Aerogels with Wide Working Potential Window.

PubMed

Bora, Anindita; Mohan, Kiranjyoti; Doley, Simanta; Dolui, Swapan Kumar

2018-03-07

Flexible energy storage devices are in great demand since the advent of flexible electronics. Until now, flexible supercapacitors based on graphene analogues usually have had low operating potential windows. To this end, two dissimilar electrode materials with complementary potential ranges are employed to obtain an optimum cell voltage of 1.8 V. A low-temperature organic sol-gel method is used to prepare two different types of functionalized reduced graphene oxide aerogels (rGOA) where Ag nanorod functionalized rGOA acts as a negative electrode while polyaniline nanotube functionalized rGOA acts as a positive electrode. Both materials comprehensively exploit their unique properties to produce a device that has high energy and power densities. An assembled all-solid-state asymmetric supercapacitor gives a high energy density of 52.85 W h kg -1 and power density of 31.5 kW kg -1 with excellent cycling and temperature stability. The device also performs extraordinarily well under different bending conditions, suggesting its potential to meet the requirements for flexible electronics.

Design and simulation of nanoscale double-gate TFET/tunnel CNTFET

NASA Astrophysics Data System (ADS)

Bala, Shashi; Khosla, Mamta

2018-04-01

A double-gate tunnel field-effect transistor (DG tunnel FET) has been designed and investigated for various channel materials such as silicon (Si), gallium arsenide (GaAs), alminium gallium arsenide (Al x Ga1‑x As) and CNT using a nano ViDES Device and TCAD SILVACO ATLAS simulator. The proposed devices are compared on the basis of inverse subthreshold slope (SS), I ON/I OFF current ratio and leakage current. Using Si as the channel material limits the property to reduce leakage current with scaling of channel, whereas the Al x Ga1‑x As based DG tunnel FET provides a better I ON/I OFF current ratio (2.51 × 106) as compared to other devices keeping the leakage current within permissible limits. The performed silmulation of the CNT based channel in the double-gate tunnel field-effect transistor using the nano ViDES shows better performace for a sub-threshold slope of 29.4 mV/dec as the channel is scaled down. The proposed work shows the potential of the CNT channel based DG tunnel FET as a futuristic device for better switching and high retention time, which makes it suitable for memory based circuits.

Tetra-heteroatom self-doped carbon nanosheets derived from silkworm excrement for high-performance supercapacitors

NASA Astrophysics Data System (ADS)

Lei, Shuijin; Chen, Lianfu; Zhou, Wei; Deng, Peiqin; Liu, Yan; Fei, Linfeng; Lu, Wei; Xiao, Yanhe; Cheng, Baochang

2018-03-01

Carbon materials are deemed to be competitive candidate electrode materials for energy storage systems. It is still a great challenge to explore advanced carbon-based electrode materials for high-performance supercapacitors by a facile, economical and efficient method. In this work, N-, P-, S-, O-self-doped carbon nanosheets with high surface area and well-developed porosity are successfully prepared by pyrolysis carbonization and post KOH activation from silkworm excrement, a novel abundant, low-cost and eco-friendly agricultural waste. Thanks to their unique multi-heteroatom doping and porous structure, the obtained carbon materials exhibit high charge storage capacity with a specific capacitance of 401 F g-1 at a current density of 0.5 A g-1 in 6 M KOH and good cycling stability with a capacitance retention of 93.8% over 10000 cycles. A symmetric supercapacitor device using 1 M Na2SO4 aqueous solution as the electrolyte can deliver a specific capacitance of 41.7 F g-1 at a current density of 0.5 A g-1, and a high energy density of 23.17 Wh kg-1 at a power density of 500 W kg-1 with a wide voltage window of 2.0 V. This work develops a new strategy to produce favorable carbon-based electrode materials for supercapacitors with high electrochemical performances.

Conducting Polymer-Based Nanohybrid Transducers: A Potential Route to High Sensitivity and Selectivity Sensors

PubMed Central

Park, Seon Joo; Kwon, Oh Seok; Lee, Ji Eun; Jang, Jyongsik; Yoon, Hyeonseok

2014-01-01

The development of novel sensing materials provides good opportunities to realize previously unachievable sensor performance. In this review, conducting polymer-based nanohybrids are highlighted as innovative transducers for high-performance chemical and biological sensing devices. Synthetic strategies of the nanohybrids are categorized into four groups: (1) impregnation, followed by reduction; (2) concurrent redox reactions; (3) electrochemical deposition; (4) seeding approach. Nanocale hybridization of conducting polymers with inorganic components can lead to improved sorption, catalytic reaction and/or transport behavior of the material systems. The nanohybrids have thus been used to detect nerve agents, toxic gases, volatile organic compounds, glucose, dopamine, and DNA. Given further advances in nanohybrids synthesis, it is expected that sensor technology will also evolve, especially in terms of sensitivity and selectivity. PMID:24561406

Direct X-ray detection with hybrid solar cells based on organolead halide perovskites

NASA Astrophysics Data System (ADS)

Gill, Hardeep Singh; Elshahat, Bassem; Sajo, Erno; Kumar, Jayant; Kokil, Akshay; Zygmanski, Piotr; Li, Lian; Mosurkal, Ravi

2014-03-01

Organolead halide perovskite materials are attracting considerable interest due to their exceptional opto-electronic properties, such as, high charge carrier mobilities, high exciton diffusion length, high extinction coefficients and broad-band absorption. These interesting properties have enabled their application in high performance hybrid photovoltaic devices. The high Z value of their constituents also makes these materials efficient for absorbing X-rays. Here we will present on the efficient use of hybrid solar cells based on organolead perovskite materials as X-ray detectors. Hybrid solar cells based on CH3NH3PbI3 were fabricated using facile processing techniques on patterned indium tin oxide coated glass substrates. The solar cells typically had a planar configuration of ITO/CH3NH3PbI3/P3HT/Ag. High sensitivity for X-rays due to high Z value, larger carrier mobility and better charge collection was observed. Detecting X-rays with energies relevant to medical oncology applications opens up the potential for diagnostic imaging applications.

Multimaterial 3D Printing of Graphene-Based Electrodes for Electrochemical Energy Storage Using Thermoresponsive Inks.

PubMed

Rocha, Victoria G; García-Tuñón, Esther; Botas, Cristina; Markoulidis, Foivos; Feilden, Ezra; D'Elia, Eleonora; Ni, Na; Shaffer, Milo; Saiz, Eduardo

2017-10-25

The current lifestyles, increasing population, and limited resources result in energy research being at the forefront of worldwide grand challenges, increasing the demand for sustainable and more efficient energy devices. In this context, additive manufacturing brings the possibility of making electrodes and electrical energy storage devices in any desired three-dimensional (3D) shape and dimensions, while preserving the multifunctional properties of the active materials in terms of surface area and conductivity. This paves the way to optimized and more efficient designs for energy devices. Here, we describe how three-dimensional (3D) printing will allow the fabrication of bespoke devices, with complex geometries, tailored to fit specific requirements and applications, by designing water-based thermoresponsive inks to 3D-print different materials in one step, for example, printing the active material precursor (reduced chemically modified graphene (rCMG)) and the current collector (copper) for supercapacitors or anodes for lithium-ion batteries. The formulation of thermoresponsive inks using Pluronic F127 provides an aqueous-based, robust, flexible, and easily upscalable approach. The devices are designed to provide low resistance interface, enhanced electrical properties, mechanical performance, packing of rCMG, and low active material density while facilitating the postprocessing of the multicomponent 3D-printed structures. The electrode materials are selected to match postprocessing conditions. The reduction of the active material (rCMG) and sintering of the current collector (Cu) take place simultaneously. The electrochemical performance of the rCMG-based self-standing binder-free electrode and the two materials coupled rCMG/Cu printed electrode prove the potential of multimaterial printing in energy applications.

Liquid crystals for organic transistors (Conference Presentation)

NASA Astrophysics Data System (ADS)

Hanna, Jun-ichi; Iino, Hiroaki

2016-09-01

Liquid crystals are a new type of organic semiconductors exhibiting molecular orientation in self-organizing manner, and have high potential for device applications. In fact, various device applications have been proposed so far, including photosensors, solar cells, light emitting diodes, field effect transistors, and so on.. However, device performance in those fabricated with liquid crystals is less than those of devices fabricated with conventional materials in spite of unique features of liquid crystals. Here we discuss how we can utilize the liquid crystallinity in organic transistors and how we can overcome conventional non-liquid crystalline organic transistor materials. Then, we demonstrate high performance organic transistors fabricated with a smectic E liquid crystal of Ph-BTBT-10, which show high mobility of over 10cm2/Vs and high thermal durability of over 200oC in OFETs fabricated with its spin-coated polycrystalline thin films.

Transition Metal-Oxide Free Perovskite Solar Cells Enabled by a New Organic Charge Transport Layer.

PubMed

Chang, Sehoon; Han, Ggoch Ddeul; Weis, Jonathan G; Park, Hyoungwon; Hentz, Olivia; Zhao, Zhibo; Swager, Timothy M; Gradečak, Silvija

2016-04-06

Various electron and hole transport layers have been used to develop high-efficiency perovskite solar cells. To achieve low-temperature solution processing of perovskite solar cells, organic n-type materials are employed to replace the metal oxide electron transport layer (ETL). Although PCBM (phenyl-C61-butyric acid methyl ester) has been widely used for this application, its morphological instability in films (i.e., aggregation) is detrimental. Herein, we demonstrate the synthesis of a new fullerene derivative (isobenzofulvene-C60-epoxide, IBF-Ep) that serves as an electron transporting material for methylammonium mixed lead halide-based perovskite (CH3NH3PbI(3-x)Cl(x)) solar cells, both in the normal and inverted device configurations. We demonstrate that IBF-Ep has superior morphological stability compared to the conventional acceptor, PCBM. IBF-Ep provides higher photovoltaic device performance as compared to PCBM (6.9% vs 2.5% in the normal and 9.0% vs 5.3% in the inverted device configuration). Moreover, IBF-Ep devices show superior tolerance to high humidity (90%) in air. By reaching power conversion efficiencies up to 9.0% for the inverted devices with IBF-Ep as the ETL, we demonstrate the potential of this new material as an alternative to metal oxides for perovskite solar cells processed in air.

Material and fabrication strategies for artificial muscles (Conference Presentation)

NASA Astrophysics Data System (ADS)

Spinks, Geoffrey M.

2017-04-01

Soft robotic and wearable robotic devices seek to exploit polymer based artificial muscles and sensor materials to generate biomimetic movements and forces. A challenge is to integrate the active materials into a complex, three-dimensional device with integrated electronics, power supplies and support structures. Both 3D printing and textiles technologies offer attractive fabrication strategies, but require suitable functional materials. 3D printing of actuating hydrogels has been developed to produce simple devices, such as a prototype valve. Tough hydrogels based on interpenetrating networks of ionicially crosslinked alginate and covalently crosslinked polyacrylamide and poly(N-isopropylacrylamide) have been developed in a form suitable for extrusion printing with UV curing. Combined with UV-curable and extrudable rigid acrylated urethanes, the tough hydrogels can be 3D printed into composite materials or complex shapes with multiple different materials. An actuating valve was printed that operated thermally to open or close the flow path using 6 parallel hydrogel actuators. Textile processing methods such as knitting and weaving can be used to generate assemblies of actuating fibres. Low cost and high performance coiled fibres made from oriented polymers have been used for developing actuating textiles. Similarly, braiding methods have been developed to fabricate new forms of McKibben muscles that operate without any external apparatus, such as pumps, compressors or piping.

Carbon-doped single-crystalline SiGe/Si thermistor with high temperature coefficient of resistance and low noise level

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radamson, H. H.; Kolahdouz, M.; Shayestehaminzadeh, S.

2010-11-29

SiGe (C)/Si(C) multiquantum wells have been studied as a thermistor material for future bolometers. A thermistor material for uncooled Si-based thermal detectors with thermal coefficient of resistance of 4.5%/K for 100x100 {mu}m{sup 2} pixel sizes and low noise constant (K{sub 1/f}) value of 4.4x10{sup -15} is presented. The outstanding performance of the devices is due to Ni-silicide contacts, smooth interfaces, and high quality multiquantum wells containing high Ge content.

Graphene based 2D-materials for supercapacitors

NASA Astrophysics Data System (ADS)

Palaniselvam, Thangavelu; Baek, Jong-Beom

2015-09-01

Ever-increasing energy demands and the depletion of fossil fuels are compelling humanity toward the development of suitable electrochemical energy conversion and storage devices to attain a more sustainable society with adequate renewable energy and zero environmental pollution. In this regard, supercapacitors are being contemplated as potential energy storage devices to afford cleaner, environmentally friendly energy. Recently, a great deal of attention has been paid to two-dimensional (2D) nanomaterials, including 2D graphene and its inorganic analogues (transition metal double layer hydroxides, chalcogenides, etc), as potential electrodes for the development of supercapacitors with high electrochemical performance. This review provides an overview of the recent progress in using these graphene-based 2D materials as potential electrodes for supercapacitors. In addition, future research trends including notable challenges and opportunities are also discussed.

Facile Method and Novel Dielectric Material Using a Nanoparticle-Doped Thermoplastic Elastomer Composite Fabric for Triboelectric Nanogenerator Applications.

PubMed

Zhang, Zhi; Chen, Ying; Debeli, Dereje Kebebew; Guo, Jian Sheng

2018-04-18

The trends toward flexible and wearable electronic devices give rise to the attention of triboelectric nanogenerators (TENGs) which can gather tiny energy from human body motions. However, to accommodate the needs, wearable electronics are still facing challenges for choosing a better dielectric material to improve their performance and practicability. As a kind of synthetic rubber, the thermoplastic elastomer (TPE) contains many advantages such as lightweight, good flexibility, high tear strength, and friction resistance, accompanied by good adhesion with fabrics, which is an optimal candidate of dielectric materials. Herein, a novel nanoparticle (NP)-doped TPE composite fabric-based TENG (TF-TENG) has been developed, which operates based on the NP-doped TPE composite fabric using a facile coating method. The performances of the TENG device are systematically investigated under various thicknesses of TPE films, NP kinds, and doping mass. After being composited with a Cu NP-doped TPE film, the TPE composite fabric exhibited superior elastic behavior and good bending property, along with excellent flexibility. Moreover, a maximum output voltage of 470 V, a current of 24 μA, and a power of 12 mW under 3 MΩ can be achieved by applying a force of 60 N on the TF-TENG. More importantly, the TF-TENG can be successfully used to harvest biomechanical energy from human body and provides much more comfort. In general, the TF-TENG has great application prospects in sustainable wearable devices owing to its lightweight, flexibility, and high mechanical properties.

Reversible Conversion of Dominant Polarity in Ambipolar Polymer/Graphene Oxide Hybrids

PubMed Central

Zhou, Ye; Han, Su-Ting; Sonar, Prashant; Ma, Xinlei; Chen, Jihua; Zheng, Zijian; Roy, V. A. L.

2015-01-01

The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. This hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits. PMID:25801827

High temperature thermal management with boron nitride nanosheets.

PubMed

Wang, Yilin; Xu, Lisha; Yang, Zhi; Xie, Hua; Jiang, Puqing; Dai, Jiaqi; Luo, Wei; Yao, Yonggang; Hitz, Emily; Yang, Ronggui; Yang, Bao; Hu, Liangbing

2017-12-21

The rapid development of high power density devices requires more efficient heat dissipation. Recently, two-dimensional layered materials have attracted significant interest due to their superior thermal conductivity, ease of production and chemical stability. Among them, hexagonal boron nitride (h-BN) is electrically insulating, making it a promising thermal management material for next-generation electronics. In this work, we demonstrated that an h-BN thin film composed of layer-by-layer laminated h-BN nanosheets can effectively enhance the lateral heat dissipation on the substrate. We found that by using the BN-coated glass instead of bare glass as the substrate, the highest operating temperature of a reduced graphene oxide (RGO) based device could increase from 700 °C to 1000 °C, and at the same input power, the operating temperature of the RGO device is effectively decreased. The remarkable performance improvement using the BN coating originates from its anisotropic thermal conductivity: a high in-plane thermal conductivity of 14 W m -1 K -1 for spreading and a low cross-plane thermal conductivity of 0.4 W m -1 K -1 to avoid a hot spot right underneath the device. Our results provide an effective approach to improve the heat dissipation in integrated circuits and high power devices.

Nonlinear silicon photonics

NASA Astrophysics Data System (ADS)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

Integrating theory, synthesis, spectroscopy and device efficiency to design and characterize donor materials for organic photovoltaics: a case study including 12 donors

DOE PAGES

Oosterhout, S. D.; Kopidakis, N.; Owczarczyk, Z. R.; ...

2015-04-07

There have been remarkable improvements in the power conversion efficiency of solution-processable Organic Photovoltaics (OPV) have largely been driven by the development of novel narrow bandgap copolymer donors comprising an electron-donating (D) and an electron-withdrawing (A) group within the repeat unit. The large pool of potential D and A units and the laborious processes of chemical synthesis and device optimization, has made progress on new high efficiency materials slow with a few new efficient copolymers reported every year despite the large number of groups pursuing these materials. In our paper we present an integrated approach toward new narrow bandgap copolymersmore » that uses theory to guide the selection of materials to be synthesized based on their predicted energy levels, and time-resolved microwave conductivity (TRMC) to select the best-performing copolymer–fullerene bulk heterojunction to be incorporated into complete OPV devices. We validate our methodology by using a diverse group of 12 copolymers, including new and literature materials, to demonstrate good correlation between (a) theoretically determined energy levels of polymers and experimentally determined ionization energies and electron affinities and (b) photoconductance, measured by TRMC, and OPV device performance. The materials used here also allow us to explore whether further copolymer design rules need to be incorporated into our methodology for materials selection. For example, we explore the effect of the enthalpy change (ΔH) during exciton dissociation on the efficiency of free charge carrier generation and device efficiency and find that ΔH of -0.4 eV is sufficient for efficient charge generation.« less

High-performance field-effect transistors based on gadolinium doped indium oxide nanofibers and their application in logic gate

NASA Astrophysics Data System (ADS)

Wang, Chao; Meng, You; Guo, Zidong; Shin, Byoungchul; Liu, Guoxia; Shan, Fukai

2018-05-01

One-dimensional metal oxide nanofibers have been regarded as promising building blocks for large area low cost electronic devices. As one of the representative metal oxide semiconducting materials, In2O3 based materials have attracted much interest due to their excellent electrical and optical properties. However, most of the field-effect transistors (FETs) based on In2O3 nanofibers usually operate in a depletion mode, which lead to large power consumption and a complicated integrated circuit design. In this report, gadolinium (Gd) doped In2O3 (InGdO) nanofibers were fabricated by electrospinning and applied as channels in the FETs. By optimizing the doping concentration and the nanofiber density, the device performance could be precisely manipulated. It was found that the FETs based on InGdO nanofibers, with a Gd doping concentration of 3% and a nanofiber density of 2.9 μm-1, exhibited the best device performance, including a field-effect mobility (μFE) of 2.83 cm2/V s, an on/off current ratio of ˜4 × 108, a threshold voltage (VTH) of 5.8 V, and a subthreshold swing (SS) of 2.4 V/decade. By employing the high-k ZrOx thin films as the gate dielectrics in the FETs, the μFE, VTH and SS can be further improved to be 17.4 cm2/V s, 0.7 V and 160 mV/decade, respectively. Finally, an inverter based on the InGdO nanofibers/ZrOx FETs was constructed and a gain of ˜11 was achieved.

SiC Schottky Diode Detectors for Measurement of Actinide Concentrations from Alpha Activities in Molten Salt Electrolyte

DOE Office of Scientific and Technical Information (OSTI.GOV)

Windl, Wolfgang; Blue, Thomas

In this project, we have designed a 4H-SiC Schottky diode detector device in order to monitor actinide concentrations in extreme environments, such as present in pyroprocessing of spent fuel. For the first time, we have demonstrated high temperature operation of such a device up to 500 °C in successfully detecting alpha particles. We have used Am-241 as an alpha source for our laboratory experiments. Along with the experiments, we have developed a multiscale model to study the phenomena controlling the device behavior and to be able to predict the device performance. Our multiscale model consists of ab initio modeling tomore » understand defect energetics and their effect on electronic structure and carrier mobility in the material. Further, we have developed the basis for a damage evolution model incorporating the outputs from ab initio model in order to predict respective defect concentrations in the device material. Finally, a fully equipped TCAD-based device model has been developed to study the phenomena controlling the device behavior. Using this model, we have proven our concept that the detector is capable of performing alpha detection in a salt bath with the mixtures of actinides present in a pyroprocessing environment.« less

Porous dimanganese trioxide microflowers derived from microcoordinations for flexible solid-state asymmetric supercapacitors

NASA Astrophysics Data System (ADS)

Pang, Huan; Li, Xinran; Li, Bing; Zhang, Yizhou; Zhao, Qunxing; Lai, Wen-Yong; Huang, Wei

2016-06-01

Dimanganese trioxide microflowers are easily obtained from a Mn(ii) 8-hydroxyquinoline microcoordination after calcination in air. We also look into the possible formation mechanism of the flower-like morphology, and find that the reaction time affects the morphology of the coordination. Furthermore, the as-prepared porous Mn2O3 microflowers are made of many nanoplates which form many nanogaps and nanochannels. Interestingly, the assembled electrode based on the as-prepared porous Mn2O3 microflowers proves to be a high-performance electrode material for supercapacitors. The electrode shows a specific capacitance of 994 F g-1, which can work well even after 4000 cycles at 0.75 A g-1. More importantly, the porous Mn2O3 microflowers and activated carbons are assembled into a high-performance flexible solid-state asymmetric supercapacitor with a specific capacitance of 312.5 mF cm-2. The cycle test shows that the device can offer 95.6% capacity of the initial capacitance at 2.0 mA cm-2 after 5000 cycles with little decay. The maximum energy density of the device can achieve 6.56 mWh cm-3 and the maximum power density can also achieve 283.5 mW cm-3, which are among the best results for manganese based materials.Dimanganese trioxide microflowers are easily obtained from a Mn(ii) 8-hydroxyquinoline microcoordination after calcination in air. We also look into the possible formation mechanism of the flower-like morphology, and find that the reaction time affects the morphology of the coordination. Furthermore, the as-prepared porous Mn2O3 microflowers are made of many nanoplates which form many nanogaps and nanochannels. Interestingly, the assembled electrode based on the as-prepared porous Mn2O3 microflowers proves to be a high-performance electrode material for supercapacitors. The electrode shows a specific capacitance of 994 F g-1, which can work well even after 4000 cycles at 0.75 A g-1. More importantly, the porous Mn2O3 microflowers and activated carbons are assembled into a high-performance flexible solid-state asymmetric supercapacitor with a specific capacitance of 312.5 mF cm-2. The cycle test shows that the device can offer 95.6% capacity of the initial capacitance at 2.0 mA cm-2 after 5000 cycles with little decay. The maximum energy density of the device can achieve 6.56 mWh cm-3 and the maximum power density can also achieve 283.5 mW cm-3, which are among the best results for manganese based materials. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr02267g

Room-temperature vertically-aligned copper oxide nanoblades synthesized by electrochemical restructuring of copper hydroxide nanorods: An electrode for high energy density hybrid device

NASA Astrophysics Data System (ADS)

Zhang, Xuetao; Zhou, Jinyuan; Dou, Wei; Wang, Junya; Mu, Xuemei; Zhang, Yue; Abas, Asim; Su, Qing; Lan, Wei; Xie, Erqing; Zhang, Chuanfang (John)

2018-04-01

The fast growing of portable electronics has greatly stimulated the development of energy storage materials, such as transition metal oxides (TMOs). However, TMOs usually involve harsh synthesis conditions, such as high temperature. Here we take advantage of the metastable nature of Cu(OH)2 and grow CuO nanoblades (NBs) on Cu foam under the electric field at room temperature. The electrochemical polarization accelerates the dissolution of Cu(OH)2 nanorods, guides the deposition of the as-dissolved Cu(OH)42- species and eventually leads to the phase transformation of CuO NBs. The unique materials architecture render the vertically-aligned CuO NBs with enhanced electronic and ionic diffusion kinetics, high charge storage (∼779 mC cm-2 at 1 mA cm-2), excellent rate capability and long-term cycling performances. Further matching with activated carbon electrode results in high-performance hybrid device, which displays a wide voltage window (1.7 V) in aqueous electrolyte, high energy density (0.17 mWh cm-2) and power density (34 mW cm-2) coupled with long lifetime, surpassing the best CuO based device known. The hybrid device can be randomly connected and power several light-emitting diodes. Importantly, such an electrochemical restructuring approach is cost-effective, environmentally green and universal, and can be extended to synthesize other metastable hydroxides to in-situ grow corresponding oxides.

Albion: the UK 3rd generation high-performance thermal imaging programme

NASA Astrophysics Data System (ADS)

McEwen, R. K.; Lupton, M.; Lawrence, M.; Knowles, P.; Wilson, M.; Dennis, P. N. J.; Gordon, N. T.; Lees, D. J.; Parsons, J. F.

2007-04-01

The first generation of high performance thermal imaging sensors in the UK was based on two axis opto-mechanical scanning systems and small (4-16 element) arrays of the SPRITE detector, developed during the 1970s. Almost two decades later, a 2nd Generation system, STAIRS C was introduced, based on single axis scanning and a long linear array of approximately 3000 elements. The UK has now begun the industrialisation of 3 rd Generation High Performance Thermal Imaging under a programme known as "Albion". Three new high performance cadmium mercury telluride arrays are being manufactured. The CMT material is grown by MOVPE on low cost substrates and bump bonded to the silicon read out circuit (ROIC). To maintain low production costs, all three detectors are designed to fit with existing standard Integrated Detector Cooling Assemblies (IDCAs). The two largest focal planes are conventional devices operating in the MWIR and LWIR spectral bands. A smaller format LWIR device is also described which has a smart ROIC, enabling much longer stare times than are feasible with conventional pixel circuits, thus achieving very high sensitivity. A new reference surface technology for thermal imaging sensors is described, based on Negative Luminescence (NL), which offers several advantages over conventional peltier references, improving the quality of the Non-Uniformity Correction (NUC) algorithms.

High performance thermoelectric nanocomposite device

DOEpatents

Yang, Jihui [Lakeshore, CA; Snyder, Dexter D [Birmingham, MI

2011-10-25

A thermoelectric device includes a nanocomposite material with nanowires of at least one thermoelectric material having a predetermined figure of merit, the nanowires being formed in a porous substrate having a low thermal conductivity and having an average pore diameter ranging from about 4 nm to about 300 nm.

Improved performance of organic solar cells with solution processed hole transport layer

NASA Astrophysics Data System (ADS)

Bhargav, Ranoo; Gairola, S. P.; Patra, Asit; Naqvi, Samya; Dhawan, S. K.

2018-06-01

This work is based on Cobalt Oxide as solution processed, inexpensive and effective hole transport layer (HTL) for efficient organic photovoltaic applications (OPVs). In Organic solar cell (OSC) devices ITO coated glass substrate used as a transparent anode electrode for light incident, HTL material Co3O4 dissolve in DMF solvent deposited on anode electrode, after that active layer material (donor/acceptor) deposited on to HTL and finally Al were deposited by thermal evaporation used as cathode electrode. These devices were fabricated with PCDTBT well known low band gap donor material in OSCs and blended with PC71BM as an acceptor material using simplest device structure ITO/Co3O4/active layer/Al at ambient conditions. The power conversion efficiencies (PCEs) based on Co3O4 and PEDOT:PSS have been achieved to up to 3.21% and 1.47% with PCDTBT respectively. In this study we reported that the devices fabricated with Co3O4 showed better performance as compare to the devices fabricated with well known and most studied solution processed HTL material PEDOT:PSS under identical environmental conditions. The surface morphology of the HTL film was characterized by (AFM). Lastly, we have provided Co3O4 as an efficient hole transport material HTL for solution processed organic photovoltaic applications.

Non-Doped Sky-Blue OLEDs Based on Simple Structured AIE Emitters with High Efficiencies at Low Driven Voltages.

PubMed

Islam, Amjad; Zhang, Dongdong; Peng, Ruixiang; Yang, Rongjuan; Hong, Ling; Song, Wei; Wei, Qiang; Duan, Lian; Ge, Ziyi

2017-09-05

Blue organic light-emitting diodes (OLEDs) are necessary for flat-panel display technologies and lighting applications. To make more energy-saving, low-cost and long-lasting OLEDs, efficient materials as well as simple structured devices are in high demand. However, a very limited number of blue OLEDs achieving high stability and color purity have been reported. Herein, three new sky-blue emitters, 1,4,5-triphenyl-2-(4-(1,2,2-triphenylvinyl)phenyl)-1H-imidazole (TPEI), 1-(4-methoxyphenyl)-4,5-diphenyl-2-(4-(1,2,2-triphenylvinyl)phenyl)-1H-imidazole (TPEMeOPhI) and 1-phenyl-2,4,5-tris(4-(1,2,2-triphenylvinyl)phenyl)-1H-imidazole (3TPEI), with a combination of imidazole and tetraphenylethene groups, have been developed. High photoluminescence quantum yields are obtained for these materials. All derivatives have demonstrated aggregation-induced emission (AIE) behavior, excellent thermal stability with high decomposition and glass transition temperatures. Non-doped sky-blue OLEDs with simple structure have been fabricated employing these materials as emitters and realized high efficiencies of 2.41 % (4.92 cd A -1 , 2.70 lm W -1 ), 2.16 (4.33 cd A -1 , 2.59 lm W -1 ) and 3.13 % (6.97 cd A -1 , 4.74 lm W -1 ) for TPEI, TPEMeOPhI and 3TPEI, with small efficiency roll-off. These are among excellent results for molecules constructed from the combination of imidazole and TPE reported so far. The high performance of a 3TPEI-based device shows the promising potential of the combination of imidazole and AIEgen for synthesizing efficient electroluminescent materials for OLED devices. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Novel and high-performance asymmetric micro-supercapacitors based on graphene quantum dots and polyaniline nanofibers

NASA Astrophysics Data System (ADS)

Liu, Wenwen; Yan, Xingbin; Chen, Jiangtao; Feng, Yaqiang; Xue, Qunji

2013-06-01

In comparison with graphene sheets, graphene quantum dots (GQDs) exhibit novel chemical/physical properties including nanometer-size, abundant edge defects, good electrical conductivity, high mobility, chemical inertia, stable photoluminescence and better surface grafting, making them promising for fabricating various novel devices. In the present work, an asymmetric micro-supercapacitor, using GQDs as negative active material and polyaniline (PANI) nanofibers as positive active material, is built for the first time by a simple and controllable two-step electro-deposition on interdigital finger gold electrodes. Electrochemical measurements reveal that the as-made GQDs//PANI asymmetric micro-supercapacitor has a more excellent rate capability (up to 1000 V s-1) than previously reported electrode materials, as well as faster power response capability (with a very short relaxation time constant of 115.9 μs) and better cycling stability after 1500 cycles in aqueous electrolyte. On this basis, an all-solid-state GQDs//PANI asymmetric micro-supercapacitor is fabricated using H3PO4-polyvinyl alcohol gel as electrolyte, which also exhibits desirable electrochemical capacitive performances. These encouraging results presented here may open up new insight into GQDs with highly promising applications in high-performance energy-storage devices, and further expand the potential applications of GQDs beyond the energy-oriented application of GQDs discussed above.In comparison with graphene sheets, graphene quantum dots (GQDs) exhibit novel chemical/physical properties including nanometer-size, abundant edge defects, good electrical conductivity, high mobility, chemical inertia, stable photoluminescence and better surface grafting, making them promising for fabricating various novel devices. In the present work, an asymmetric micro-supercapacitor, using GQDs as negative active material and polyaniline (PANI) nanofibers as positive active material, is built for the first time by a simple and controllable two-step electro-deposition on interdigital finger gold electrodes. Electrochemical measurements reveal that the as-made GQDs//PANI asymmetric micro-supercapacitor has a more excellent rate capability (up to 1000 V s-1) than previously reported electrode materials, as well as faster power response capability (with a very short relaxation time constant of 115.9 μs) and better cycling stability after 1500 cycles in aqueous electrolyte. On this basis, an all-solid-state GQDs//PANI asymmetric micro-supercapacitor is fabricated using H3PO4-polyvinyl alcohol gel as electrolyte, which also exhibits desirable electrochemical capacitive performances. These encouraging results presented here may open up new insight into GQDs with highly promising applications in high-performance energy-storage devices, and further expand the potential applications of GQDs beyond the energy-oriented application of GQDs discussed above. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr01139a

Nanowire-based thermoelectrics

NASA Astrophysics Data System (ADS)

Ali, Azhar; Chen, Yixi; Vasiraju, Venkata; Vaddiraju, Sreeram

2017-07-01

Research on thermoelectrics has seen a huge resurgence since the early 1990s. The ability of tuning a material’s electrical and thermal transport behavior upon nanostructuring has led to this revival. Nevertheless, thermoelectric performances of nanowires and related materials lag far behind those achieved with thin-film superlattices and quantum dot-based materials. This is despite the fact that nanowires offer many distinct advantages in enhancing the thermoelectric performances of materials. The simplicity of the strategy is the first and foremost advantage. For example, control of the nanowire diameters and their surface roughnesses will aid in enhancing their thermoelectric performances. Another major advantage is the possibility of obtaining high thermoelectric performances using simpler nanowire chemistries (e.g., elemental and binary compound semiconductors), paving the way for the fabrication of thermoelectric modules inexpensively from non-toxic elements. In this context, the topical review provides an overview of the current state of nanowire-based thermoelectrics. It concludes with a discussion of the future vision of nanowire-based thermoelectrics, including the need for developing strategies aimed at the mass production of nanowires and their interface-engineered assembly into devices. This eliminates the need for trial-and-error strategies and complex chemistries for enhancing the thermoelectric performances of materials.

Two-Dimensional Atomic-Layered Alloy Junctions for High-Performance Wearable Chemical Sensor.

PubMed

Cho, Byungjin; Kim, Ah Ra; Kim, Dong Jae; Chung, Hee-Suk; Choi, Sun Young; Kwon, Jung-Dae; Park, Sang Won; Kim, Yonghun; Lee, Byoung Hun; Lee, Kyu Hwan; Kim, Dong-Ho; Nam, Jaewook; Hahm, Myung Gwan

2016-08-03

We first report that two-dimensional (2D) metal (NbSe2)-semiconductor (WSe2)-based flexible, wearable, and launderable gas sensors can be prepared through simple one-step chemical vapor deposition of prepatterned WO3 and Nb2O5. Compared to a control device with a Au/WSe2 junction, gas-sensing performance of the 2D NbSe2/WSe2 device was significantly enhanced, which might have resulted from the formation of a NbxW1-xSe2 transition alloy junction lowering the Schottky barrier height. This would make it easier to collect charges of channels induced by molecule adsorption, improving gas response characteristics toward chemical species including NO2 and NH3. 2D NbSe2/WSe2 devices on a flexible substrate provide gas-sensing properties with excellent durability under harsh bending. Furthermore, the device stitched on a T-shirt still performed well even after conventional cleaning with a laundry machine, enabling wearable and launderable chemical sensors. These results could pave a road toward futuristic gas-sensing platforms based on only 2D materials.

Materials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations.

PubMed

Kim, Dae-Hyeong; Song, Jizhou; Choi, Won Mook; Kim, Hoon-Sik; Kim, Rak-Hwan; Liu, Zhuangjian; Huang, Yonggang Y; Hwang, Keh-Chih; Zhang, Yong-wei; Rogers, John A

2008-12-02

Electronic systems that offer elastic mechanical responses to high-strain deformations are of growing interest because of their ability to enable new biomedical devices and other applications whose requirements are impossible to satisfy with conventional wafer-based technologies or even with those that offer simple bendability. This article introduces materials and mechanical design strategies for classes of electronic circuits that offer extremely high stretchability, enabling them to accommodate even demanding configurations such as corkscrew twists with tight pitch (e.g., 90 degrees in approximately 1 cm) and linear stretching to "rubber-band" levels of strain (e.g., up to approximately 140%). The use of single crystalline silicon nanomaterials for the semiconductor provides performance in stretchable complementary metal-oxide-semiconductor (CMOS) integrated circuits approaching that of conventional devices with comparable feature sizes formed on silicon wafers. Comprehensive theoretical studies of the mechanics reveal the way in which the structural designs enable these extreme mechanical properties without fracturing the intrinsically brittle active materials or even inducing significant changes in their electrical properties. The results, as demonstrated through electrical measurements of arrays of transistors, CMOS inverters, ring oscillators, and differential amplifiers, suggest a valuable route to high-performance stretchable electronics.

Rapid and semi-analytical design and simulation of a toroidal magnet made with YBCO and MgB 2 superconductors

DOE PAGES

Dimitrov, I. K.; Zhang, X.; Solovyov, V. F.; ...

2015-07-07

Recent advances in second-generation (YBCO) high-temperature superconducting wire could potentially enable the design of super high performance energy storage devices that combine the high energy density of chemical storage with the high power of superconducting magnetic storage. However, the high aspect ratio and the considerable filament size of these wires require the concomitant development of dedicated optimization methods that account for the critical current density in type-II superconductors. In this study, we report on the novel application and results of a CPU-efficient semianalytical computer code based on the Radia 3-D magnetostatics software package. Our algorithm is used to simulate andmore » optimize the energy density of a superconducting magnetic energy storage device model, based on design constraints, such as overall size and number of coils. The rapid performance of the code is pivoted on analytical calculations of the magnetic field based on an efficient implementation of the Biot-Savart law for a large variety of 3-D “base” geometries in the Radia package. The significantly reduced CPU time and simple data input in conjunction with the consideration of realistic input variables, such as material-specific, temperature, and magnetic-field-dependent critical current densities, have enabled the Radia-based algorithm to outperform finite-element approaches in CPU time at the same accuracy levels. Comparative simulations of MgB 2 and YBCO-based devices are performed at 4.2 K, in order to ascertain the realistic efficiency of the design configurations.« less

Promising applications of graphene and graphene-based nanostructures

NASA Astrophysics Data System (ADS)

Nguyen, Bich Ha; Hieu Nguyen, Van

2016-06-01

The present article is a review of research works on promising applications of graphene and graphene-based nanostructures. It contains five main scientific subjects. The first one is the research on graphene-based transparent and flexible conductive films for displays and electrodes: efficient method ensuring uniform and controllable deposition of reduced graphene oxide thin films over large areas, large-scale pattern growth of graphene films for stretchble transparent electrodes, utilization of graphene-based transparent conducting films and graphene oxide-based ones in many photonic and optoelectronic devices and equipments such as the window electrodes of inorganic, organic and dye-sensitized solar cells, organic light-emitting diodes, light-emitting electrochemical cells, touch screens, flexible smart windows, graphene-based saturated absorbers in laser cavities for ultrafast generations, graphene-based flexible, transparent heaters in automobile defogging/deicing systems, heatable smart windows, graphene electrodes for high-performance organic field-effect transistors, flexible and transparent acoustic actuators and nanogenerators etc. The second scientific subject is the research on conductive inks for printed electronics to revolutionize the electronic industry by producing cost-effective electronic circuits and sensors in very large quantities: preparing high mobility printable semiconductors, low sintering temperature conducting inks, graphene-based ink by liquid phase exfoliation of graphite in organic solutions, and developing inkjet printing technique for mass production of high-quality graphene patterns with high resolution and for fabricating a variety of good-performance electronic devices, including transparent conductors, embedded resistors, thin-film transistors and micro supercapacitors. The third scientific subject is the research on graphene-based separation membranes: molecular dynamics simulation study on the mechanisms of the transport of molecules, vapors and gases through nanopores in graphene membranes, experimental works investigating selective transport of different molecules through nanopores in single-layer graphene and graphene-based membranes toward the water desalination, chemical mixture separation and gas control. Various applications of graphene in bio-medicine are the contents of the fourth scientific subject of the review. They include the DNA translocations through nanopores in graphene membranes toward the fabrication of devices for genomic screening, in particular DNA sequencing; subnanometre trans-electrode membranes with potential applications to the fabrication of very high resolution, high throughput nanopore-based single-molecule detectors; antibacterial activity of graphene, graphite oxide, graphene oxide and reduced graphene oxide; nanopore sensors for nucleic acid analysis; utilization of graphene multilayers as the gates for sequential release of proteins from surface; utilization of graphene-based electroresponsive scaffolds as implants for on-demand drug delivery etc. The fifth scientific subject of the review is the research on the utilization of graphene in energy storage devices: ternary self-assembly of ordered metal oxide-graphene nanocomposites for electrochemical energy storage; self-assembled graphene/carbon nanotube hybrid films for supercapacitors; carbon-based supercapacitors fabricated by activation of graphene; functionalized graphene sheet-sulfure nanocomposite for using as cathode material in rechargeable lithium batteries; tunable three-dimensional pillared carbon nanotube-graphene networks for high-performance capacitance; fabrications of electrochemical micro-capacitors using thin films of carbon nanotubes and chemically reduced graphenes; laser scribing of high-performance and flexible graphene-based electrochemical capacitors; emergence of next-generation safe batteries featuring graphene-supported Li metal anode with exceptionally high energy or power densities; fabrication of anodes for lithium ion batteries from crumpled graphene-encapsulated Si nanoparticles; liquid-mediated dense integration of graphene materials for compact capacitive energy storage; scalable fabrication of high-power graphene micro-supercapacitors for flexible and on-chip energy storage; superior micro-supercapacitors based on graphene quantum dots; all-graphene core-sheat microfibres for all-solid-state, stretchable fibriform supercapacitors and wearable electronic textiles; micro-supercapacitors with high electrochemical performance based on three-dimensional graphene-carbon nanotube carpets; macroscopic nitrogen-doped graphene hydrogels for ultrafast capacitors; manufacture of scalable ultra-thin and high power density graphene electrochemical capacitor electrodes by aqueous exfoliation and spray deposition; scalable synthesis of hierarchically structured carbon nanotube-graphene fibers for capacitive energy storage; phosphorene-graphene hybrid material as a high-capacity anode material for sodium-ion batteries. Beside above-presented promising applications of graphene and graphene-based nanostructures, other less widespread, but perhaps not less important, applications of graphene and graphene-based nanomaterials, are also briefly discussed.

Low cost microfluidic device based on cotton threads for electroanalytical application.

PubMed

Agustini, Deonir; Bergamini, Márcio F; Marcolino-Junior, Luiz Humberto

2016-01-21

Microfluidic devices are an interesting alternative for performing analytical assays, due to the speed of analyses, reduced sample, reagent and solvent consumption and less waste generation. However, the high manufacturing costs still prevent the massive use of these devices worldwide. Here, we present the construction of a low cost microfluidic thread-based electroanalytical device (μTED), employing extremely cheap materials and a manufacturing process free of equipment. The microfluidic channels were built with cotton threads and the estimated cost per device was only $0.39. The flow of solutions (1.12 μL s(-1)) is generated spontaneously due to the capillary forces, eliminating the use of any pumping system. To demonstrate the analytical performance of the μTED, a simultaneous determination of acetaminophen (ACT) and diclofenac (DCF) was performed by multiple pulse amperometry (MPA). A linear dynamic range (LDR) of 10 to 320 μmol L(-1) for both species, a limit of detection (LOD) and a limit of quantitation (LOQ) of 1.4 and 4.7 μmol L(-1) and 2.5 and 8.3 μmol L(-1) for ACT and DCF, respectively, as well as an analytical frequency of 45 injections per hour were reached. Thus, the proposed device has shown potential to extend the use of microfluidic analytical devices, due to its simplicity, low cost and good analytical performance.

High Performance Nano-Crystalline Oxide Fuel Cell Materials. Defects, Structures, Interfaces, Transport, and Electrochemistry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barnett, Scott; Poeppelmeier, Ken; Mason, Tom

This project addresses fundamental materials challenges in solid oxide electrochemical cells, devices that have a broad range of important energy applications. Although nano-scale mixed ionically and electronically conducting (MIEC) materials provide an important opportunity to improve performance and reduce device operating temperature, durability issues threaten to limit their utility and have remained largely unexplored. Our work has focused on both (1) understanding the fundamental processes related to oxygen transport and surface-vapor reactions in nano-scale MIEC materials, and (2) determining and understanding the key factors that control their long-term stability. Furthermore, materials stability has been explored under the “extreme” conditions encounteredmore » in many solid oxide cell applications, i.e, very high or very low effective oxygen pressures, and high current density.« less

Characterizations of and Radiation Effects in Several Emerging CMOS Technologies

NASA Astrophysics Data System (ADS)

Shufeng Ren

As the conventional scaling of Si based CMOS is approaching its limit at 7 nm technology node, many perceive that the adoption of novel materials and/or device structures are inevitable to keep Moore's law going. High mobility channel materials such as III-V compound semiconductors or Ge are considered promising to replace Si in order to achieve high performance as well as low power consumption. However, interface and oxide traps have become a major obstacle for high-mobility semiconductors (such as Ge, GaAs, InGaAs, GaSb, etc) to replace Si CMOS technology. Therefore novel high-k dielectrics, such as epitaxially grown crystalline oxides, have been explored to be incorporated onto the high mobility channel materials. Moreover, to enable continued scaling, extremely scaled devices structures such as nanowire gate-all-around structure are needed in the near future. Moreover, as the CMOS industry moves into the 7 nm node and beyond, novel lithography techniques such as EUV are believed to be adopted soon, which can bring radiation damage to CMOS devices and circuit during the fabrication process. Therefore radiation hardening technology in future generations of CMOS devices has again become an interesting research topic to deal with the possible process-induced damage as well as damage caused by operating in radiation harsh environment such as outer space, nuclear plant, etc. In this thesis, the electrical properties of a few selected emerging novel CMOS devices are investigated, which include InGaAs based extremely scaled ultra-thin body nanowire gate-all-around MOSFETs, GOI (Ge On Insulator) CMOS with recessed channel and source/drain, GaAs MOSFETs with crystalline La based gate stack, and crystalline SrTiO3, are investigated to extend our understanding of their electrical characteristics, underlying physical mechanisms, and material properties. Furthermore, the radiation responses of these aforementioned novel devices are thoroughly investigated, with a focus on the total ionizing dose (TID) effect, to understand the associated physical mechanisms, and to help to inspire ideas to improve radiation immunity of these novel devices. The experimental methods used in this thesis research include the measurements of C-V, I-V characteristics, where novel gate stack and interface characterization techniques are employed, such as AC Gm method, 1/f low frequency noise method, inelastic electron tunneling spectroscopy (IETS) for chemical bonding and defects detection, and carrier transport modeling. Sentaurus TCAD simulations are also carried out to obtain more physical insight in the complex, extremely scaled, device structures.

Coating and Patterning Functional Materials for Large Area Electrofluidic Arrays

PubMed Central

Wu, Hao; Tang, Biao; Hayes, Robert A.; Dou, Yingying; Guo, Yuanyuan; Jiang, Hongwei; Zhou, Guofu

2016-01-01

Industrialization of electrofluidic devices requires both high performance coating laminates and efficient material utilization on large area substrates. Here we show that screen printing can be effectively used to provide homogeneous pin-hole free patterned amorphous fluoropolymer dielectric layers to provide both the insulating and fluidic reversibility required for devices. Subsequently, we over-coat photoresist using slit coating on this normally extremely hydrophobic layer. In this way, we are able to pattern the photoresist by conventional lithography to provide the chemical contrast required for liquids dosing by self-assembly and highly-reversible electrofluidic switching. Materials, interfacial chemistry, and processing all contribute to the provision of the required engineered substrate properties. Coating homogeneity as characterized by metrology and device performance data are used to validate the methodology, which is well-suited for transfer to high volume production in existing LCD cell-making facilities. PMID:28773826

Coating and Patterning Functional Materials for Large Area Electrofluidic Arrays.

PubMed

Wu, Hao; Tang, Biao; Hayes, Robert A; Dou, Yingying; Guo, Yuanyuan; Jiang, Hongwei; Zhou, Guofu

2016-08-19

Industrialization of electrofluidic devices requires both high performance coating laminates and efficient material utilization on large area substrates. Here we show that screen printing can be effectively used to provide homogeneous pin-hole free patterned amorphous fluoropolymer dielectric layers to provide both the insulating and fluidic reversibility required for devices. Subsequently, we over-coat photoresist using slit coating on this normally extremely hydrophobic layer. In this way, we are able to pattern the photoresist by conventional lithography to provide the chemical contrast required for liquids dosing by self-assembly and highly-reversible electrofluidic switching. Materials, interfacial chemistry, and processing all contribute to the provision of the required engineered substrate properties. Coating homogeneity as characterized by metrology and device performance data are used to validate the methodology, which is well-suited for transfer to high volume production in existing LCD cell-making facilities.

Nano-Localized Thermal Analysis and Mapping of Surface and Sub-Surface Thermal Properties Using Scanning Thermal Microscopy (SThM).

PubMed

Pereira, Maria J; Amaral, Joao S; Silva, Nuno J O; Amaral, Vitor S

2016-12-01

Determining and acting on thermo-physical properties at the nanoscale is essential for understanding/managing heat distribution in micro/nanostructured materials and miniaturized devices. Adequate thermal nano-characterization techniques are required to address thermal issues compromising device performance. Scanning thermal microscopy (SThM) is a probing and acting technique based on atomic force microscopy using a nano-probe designed to act as a thermometer and resistive heater, achieving high spatial resolution. Enabling direct observation and mapping of thermal properties such as thermal conductivity, SThM is becoming a powerful tool with a critical role in several fields, from material science to device thermal management. We present an overview of the different thermal probes, followed by the contribution of SThM in three currently significant research topics. First, in thermal conductivity contrast studies of graphene monolayers deposited on different substrates, SThM proves itself a reliable technique to clarify the intriguing thermal properties of graphene, which is considered an important contributor to improve the performance of downscaled devices and materials. Second, SThM's ability to perform sub-surface imaging is highlighted by thermal conductivity contrast analysis of polymeric composites. Finally, an approach to induce and study local structural transitions in ferromagnetic shape memory alloy Ni-Mn-Ga thin films using localized nano-thermal analysis is presented.

Design, fabrication, and characterization of 4H-silicon carbide rectifiers for power switching applications

NASA Astrophysics Data System (ADS)

Sheridan, David Charles

Silicon Carbide has received a substantial increase in research interest over the past few years as a base material system for high-frequency and high-power semiconductor devices. Of the over 1200 polytypes, 4H-SiC is the most attractive polytype for power devices due to its wide band gap (3.2eV), excellent thermal conductivity (4.9 W/cm·K), and high critical field strength (˜2 x 106 V/cm). Important for power devices, the 10x increase in critical field strength of SiC allows high voltage blocking layers to be fabricated significantly thinner than for comparable Si devices. For power rectifiers, this reduces device on-resistance, while maintaining the same high voltage blocking capability. In this work, 4H-SiC Schottky, pn, and junction barrier Schottky (JBS) rectifiers for use in high voltage switching applications have been designed, fabricated, and extensively characterized. First, a detailed review of 4H-SiC material parameters was performed and SiC models were implemented into a standard Si drift-diffusion numerical simulator. Using these models, a SiC simulation methodology was developed in order to enable predictive SiC device design. A wide variety of rectifier and edge termination designs were investigated and optimized with respect to breakdown efficiency, area consumption, resistance to interface charge, and fabrication practicality. Simulated termination methods include: field plates, floating guard rings, and a variety of junction termination extensions (JTE). Using the device simulation results, both Schottky and JBS rectifiers were fabricated with a novel self-aligned edge termination design, and fabricated with process elements developed at the Alabama Microelectronics Science and Technology Center facility. These rectifiers exhibited near-ideal forward characteristics and had blocking voltages in excess of 2.5kV. The SiC diodes were subjected to inductive switching tests, and were found to have superior reverse recovery characteristics compared to a similar Si diode. Finally, the performance of these SiC rectifiers were tested in inductive switching circuits and in high dose gamma radiation environments. In both cases, these devices were shown to be superior to their silicon counterparts. The details of this work was presented and published in the proceedings of the 45th International Meeting of the American Vacuum Society [1], the 1999 International Conference on Silicon Carbide and Related Materials [2, 3] and the 2000 European Conference on Silicon Carbide and Related Materials [4]. The expanded conference papers were published in the international journal. Solid-State Electronics [5, 6].

Performance of Liquid Phase Exfoliated Graphene As Electrochemical Double Layer Capacitors Electrodes

NASA Astrophysics Data System (ADS)

Huffstutler, Jacob; Wasala, Milinda; Richie, Julianna; Winchester, Andrew; Ghosh, Sujoy; Kar, Swastik; Talapatra, Saikat

2014-03-01

We will present the results of our investigations of electrochemical double layer capacitors (EDLCs) or supercapacitors (SC) fabricated using liquid-phase exfoliated graphene. Several electrolytes, such as aqueous potassium hydroxide KOH (6M), ionic 1-Butyl-3-methylimidazolium hexafluorophosphate [BMIM][PF6], and ionic 1-butyl-1-methylpyrrolidinium tris(pentafluoroethyl)trifluorophosphate[BMP][FAP] were used. These EDLC's show good performance compared to other carbon nanomaterials based EDLC's devices. We found that the liquid phase exfoliated graphene based devices possess specific capacitance values as high as 262 F/g, when used with ionic liquid electrolyte[BMP][FAP], with power densities (~ 454 W/kg) and energy densities (~ 0.38Wh/kg). Further, these devices indicated rapid charge transfer response even without the use of any binders or specially prepared current collectors. A detailed electrochemical impedance spectroscopy analysis in order to understand the phenomenon of charge storage in these materials will be presented.

High-Performance Flexible All-Solid-State Asymmetric Supercapacitors Based on Vertically Aligned CuSe@Co(OH) 2 Nanosheet Arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gong, Jiangfeng; Tian, Yazhou; Yang, Ziyuan

The developments of electrode active materials provide the opportunities for next-generation energy storage devices. The arrangement of electrode materials on the substrate has recently emerged as a promising strategy for preparing high-performance supercapacitors. In this paper, we demonstrate a novel vertically aligned CuSe@Co(OH) 2 nanosheet arrays electrode for supercapacitor application. The materials are thoroughly characterized by structural and spectroscopic techniques. Electrochemical performance of CuSe@Co(OH) 2 nanosheet arrays are investigated in detail, which exhibit a specific capacitance as much as 1180 F g -1 at a current density of 1 A g -1. A flexible asymmetric all-solid-state supercapacitor is fabricated usingmore » CuSe@Co(OH) 2 nanosheet arrays as the positive electrode and activated carbon as the negative electrode. The device delivers a volumetric capacitance of 441.4 mF cm -3 with maximum energy density and maximum power density is 0.17 and 62.1 mW cm -3, as well as robust cycling stability (~80.4% capacitance retention after 10 000 cycles), excellent flexibility, and mechanical stability. Finally, the excellent electrochemical performance can be attributed to its unique vertically aligned configuration.« less

High-Performance Flexible All-Solid-State Asymmetric Supercapacitors Based on Vertically Aligned CuSe@Co(OH) 2 Nanosheet Arrays

DOE PAGES

Gong, Jiangfeng; Tian, Yazhou; Yang, Ziyuan; ...

2018-01-04

The developments of electrode active materials provide the opportunities for next-generation energy storage devices. The arrangement of electrode materials on the substrate has recently emerged as a promising strategy for preparing high-performance supercapacitors. In this paper, we demonstrate a novel vertically aligned CuSe@Co(OH) 2 nanosheet arrays electrode for supercapacitor application. The materials are thoroughly characterized by structural and spectroscopic techniques. Electrochemical performance of CuSe@Co(OH) 2 nanosheet arrays are investigated in detail, which exhibit a specific capacitance as much as 1180 F g -1 at a current density of 1 A g -1. A flexible asymmetric all-solid-state supercapacitor is fabricated usingmore » CuSe@Co(OH) 2 nanosheet arrays as the positive electrode and activated carbon as the negative electrode. The device delivers a volumetric capacitance of 441.4 mF cm -3 with maximum energy density and maximum power density is 0.17 and 62.1 mW cm -3, as well as robust cycling stability (~80.4% capacitance retention after 10 000 cycles), excellent flexibility, and mechanical stability. Finally, the excellent electrochemical performance can be attributed to its unique vertically aligned configuration.« less

Resistive Random Access Memory from Materials Development fnd Engineering to Novel Encryption and Neuromorphic Applications

NASA Astrophysics Data System (ADS)

Beckmann, Karsten

Resistive random access memory (ReRAM or RRAM) is a novel form of non-volatile memory that is expected to play a major role in future computing and memory solutions. It has been shown that the resistance state of ReRAM devices can be precisely tuned by modulating switching voltages, by limiting peak current, and by adjusting the switching pulse properties. This enables the realization of novel applications such as memristive neuromorphic computing and neural network computing. I have developed two processes based on 100 and 300mm wafer platforms to demonstrate functional HfO2 based ReRAM devices. The first process is designed for a rapid materials engineering and device characterization, while the second is an advanced hybrid ReRAM/CMOS combination based on the IBM 65nm 10LPe process technology. The 100mm wafer efforts were used to show impacts of etch processes on ReRAM switching performance and the need for a rigorous structural evaluation of ReRAM devices before starting materials development. After an etch development, a bottom electrode comparison between the inert materials Pt, Ru and W was performed where Ru showed superior results with respect to yield and resilience against environmental impacts such as humidity over a 2-month period. A comparison of amorphous and crystalline devices showed no statistical difference in the performance with respect to random telegraph noise. This demonstrates, that the forming process fundamentally alters the crystallographic structure within and around the filament. The 300mm wafer development efforts were aimed towards implementing ReRAM in the FEOL, combined with CMOS, to yield a seamless process flow of 1 transistor 1 ReRAM structures (1T1R). This technology was customized with custom-developed tungsten metal 1 (M1) and dual tungsten/copper via 1 (V1) structures, within which the ReRAM stack is embedded. The ReRAM itself consists of an inert W bottom electrode, HfO2 based active switching layer, a Ti oxygen scavenger layer, and an inert TiN top electrode. Linear sweep and controlled pulse (down to 5 ns) based electrical characterization of 1 transistor 1 ReRAM (1T1R) elements was performed to determine key properties including endurance, reliability, and threshold voltages. We demonstrated endurance values above 1010 cycles with an average on/off ratio of 10, and pulse voltages for set/reset operation of +/-1.5V. The on-chip 1T1R structures show an excellent controllability with respect to the low and high resistive states by manipulating the peak current from 75 up to 350 mu?A resulting in 10 distinct low resistance states (LRS). Our results demonstrate that the set operation (which shifts the ReRAM device from the high to the low resistance state) is only dependent on the voltage of the switching pulse and the peak current limit. The reset operation, however, occurs in an analog fashion and appears to be dependent on the total energy of the applied switching pulse. Pulse energy was modulated by varying the peak voltage resulting in a larger relative change of the ReRAM device resistance. The incremental resistance changes are ideally suited to emulate synaptic weights for future implementation into neuromorphic architectures. Switching results from these devices were also used to develop a model time-delay physical unclonable function (PUF) circuit, which showed excellent performance when compared to a pure CMOS implementation with significant improvements in uniqueness, size and accuracy.

Towards stable and commercially available perovskite solar cells

DOE PAGES

Park, Nam-Gyu; Grätzel, Michael; Miyasaka, Tsutomu; ...

2016-10-17

Solar cells employing a halide perovskite with an organic cation now show power conversion efficiency of up to 22%. But, these cells are facing issues towards commercialization, such as the need to achieve long-term stability and the development of a manufacturing method for the reproducible fabrication of high-performance devices. We propose a strategy to obtain stable and commercially viable perovskite solar cells. A reproducible manufacturing method is suggested, as well as routes to manage grain boundaries and interfacial charge transport. Electroluminescence is regarded as a metric to gauge theoretical efficiency. We highlight how optimizing the design of device architectures ismore » important not only for achieving high efficiency but also for hysteresis-free and stable performance. Here, we argue that reliable device characterization is needed to ensure the advance of this technology towards practical applications. We believe that perovskite-based devices can be competitive with silicon solar modules, and discuss issues related to the safe management of toxic material.« less

Microfabricated thermoelectric power-generation devices

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Phillips, Wayne (Inventor); Borshchevsky, Alex (Inventor); Kolawa, Elizabeth A. (Inventor); Ryan, Margaret A. (Inventor); Caillat, Thierry (Inventor); Mueller, Peter (Inventor); Snyder, G. Jeffrey (Inventor); Kascich, Thorsten (Inventor)

2002-01-01

A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.

Microfabricated thermoelectric power-generation devices

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Ryan, Margaret A. (Inventor); Borshchevsky, Alex (Inventor); Phillips, Wayne (Inventor); Kolawa, Elizabeth A. (Inventor); Snyder, G. Jeffrey (Inventor); Caillat, Thierry (Inventor); Kascich, Thorsten (Inventor); Mueller, Peter (Inventor)

2004-01-01

A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.

An electrically reconfigurable logic gate intrinsically enabled by spin-orbit materials.

PubMed

Kazemi, Mohammad

2017-11-10

The spin degree of freedom in magnetic devices has been discussed widely for computing, since it could significantly reduce energy dissipation, might enable beyond Von Neumann computing, and could have applications in quantum computing. For spin-based computing to become widespread, however, energy efficient logic gates comprising as few devices as possible are required. Considerable recent progress has been reported in this area. However, proposals for spin-based logic either require ancillary charge-based devices and circuits in each individual gate or adopt principals underlying charge-based computing by employing ancillary spin-based devices, which largely negates possible advantages. Here, we show that spin-orbit materials possess an intrinsic basis for the execution of logic operations. We present a spin-orbit logic gate that performs a universal logic operation utilizing the minimum possible number of devices, that is, the essential devices required for representing the logic operands. Also, whereas the previous proposals for spin-based logic require extra devices in each individual gate to provide reconfigurability, the proposed gate is 'electrically' reconfigurable at run-time simply by setting the amplitude of the clock pulse applied to the gate. We demonstrate, analytically and numerically with experimentally benchmarked models, that the gate performs logic operations and simultaneously stores the result, realizing the 'stateful' spin-based logic scalable to ultralow energy dissipation.

Recent progress on exploring exceptionally high and anisotropic H+/OH– ion conduction in two-dimensional materials

PubMed Central

Sun, Pengzhan; Sasaki, Takayoshi

2017-01-01

Ion conducting membranes/electrolytes have been employed extensively in some important industrial and biological systems, especially in fuel cells, water electrolyzers, gas separation, sensors and biological selective ion transport, acting as one of the core components and sometimes directly determining the device performance. However, the traditional polymeric proton exchange membranes (PEMs)/anion exchange membranes (AEMs) suffer from highly toxic preparation procedures, poor thermal and chemical stabilities, and unsatisfactory ion conductivities. This has triggered researchers worldwide to explore alternative inorganic building blocks with high ion conductivities and stabilities from the new materials library, hoping to solve the above long-lasting problems. The recent burgeoning research on two-dimensional (2D) materials has unveiled exceptionally high ionic conductivities, which raises the feasibility of fabricating high-performance nanosheet-based ion conductors/membranes. In this perspective, the recent advances in measuring and understanding the exceptionally high and anisotropic H+/OH– ion conductivities of representative 2D materials, e.g. graphene oxide (GO), vermiculite and layered double hydroxide (LDH) nanosheets, are reviewed. In particular, regarding the anisotropic ionic conduction in 2D nanosheets, possible design strategies and technological innovations for fabricating macroscopic nanosheet-based ionic conductors/membranes are proposed for maximizing the high in-plane conduction, which may serve to guide future development of high-performance industrial and biological systems relying on H+/OH– conducting membranes. PMID:29629071

Recent progress on exploring exceptionally high and anisotropic H+/OH- ion conduction in two-dimensional materials.

PubMed

Sun, Pengzhan; Ma, Renzhi; Sasaki, Takayoshi

2018-01-07

Ion conducting membranes/electrolytes have been employed extensively in some important industrial and biological systems, especially in fuel cells, water electrolyzers, gas separation, sensors and biological selective ion transport, acting as one of the core components and sometimes directly determining the device performance. However, the traditional polymeric proton exchange membranes (PEMs)/anion exchange membranes (AEMs) suffer from highly toxic preparation procedures, poor thermal and chemical stabilities, and unsatisfactory ion conductivities. This has triggered researchers worldwide to explore alternative inorganic building blocks with high ion conductivities and stabilities from the new materials library, hoping to solve the above long-lasting problems. The recent burgeoning research on two-dimensional (2D) materials has unveiled exceptionally high ionic conductivities, which raises the feasibility of fabricating high-performance nanosheet-based ion conductors/membranes. In this perspective, the recent advances in measuring and understanding the exceptionally high and anisotropic H + /OH - ion conductivities of representative 2D materials, e.g. graphene oxide (GO), vermiculite and layered double hydroxide (LDH) nanosheets, are reviewed. In particular, regarding the anisotropic ionic conduction in 2D nanosheets, possible design strategies and technological innovations for fabricating macroscopic nanosheet-based ionic conductors/membranes are proposed for maximizing the high in-plane conduction, which may serve to guide future development of high-performance industrial and biological systems relying on H + /OH - conducting membranes.

Advanced Li-Ion Hybrid Supercapacitors Based on 3D Graphene-Foam Composites.

PubMed

Liu, Wenwen; Li, Jingde; Feng, Kun; Sy, Abel; Liu, Yangshuai; Lim, Lucas; Lui, Gregory; Tjandra, Ricky; Rasenthiram, Lathankan; Chiu, Gordon; Yu, Aiping

2016-10-05

Li-ion hybrid supercapacitors (LIHSs) have recently attracted increasing attention as a new and promising energy storage device. However, it is still a great challenge to construct novel LIHSs with high-performance due to the majority of battery-type anodes retaining the sluggish kinetics of Li-ion storage and most capacitor-type cathodes with low specific capacitance. To solve this problem, 3D graphene-wrapped MoO 3 nanobelt foam with the unique porous network structure has been designed and prepared as anode material, which delivers high capacity, improved rate performance, and enhanced cycle stability. First-principles calculation reveals that the combination of graphene dramatically reduces the diffusion energy barrier of Li + adsorbed on the surface of MoO 3 nanobelt, thus improving its electrochemical performance. Furthermore, 3D graphene-wrapped polyaniline nanotube foam derived carbon is employed as a new type of capacitor-type cathode, demonstrating high specific capacitance, good rate performance, and long cycle stability. Benefiting from these two graphene foam-enhanced materials, the constructed LIHSs show a wide operating voltage range (3.8 V), a long stable cycle life (90% capacity retention after 3000 cycles), a high energy density (128.3 Wh·kg -1 ), and a high power density (13.5 kW·kg -1 ). These encouraging performances indicate that the obtained LIHSs may have promising prospect as next-generation energy-storage devices.

A study of the suitability of ferrite for use in low-field insertion devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, K.; Hassenzahl, W.V.

1995-02-01

Most insertion devices built to date use rare-earth permanent-magnet materials, which have a high remanent field and are more expensive than many other permanent-magnet materials. Low-field insertion devices could use less-expensive, lower performance magnetic materials if they had suitable magnetic characteristics. These materials must be resistant to demagnetization during construction and operation of the insertion device, have uniform magnetization, possess low minor-axis magnetic moments, and have small minor field components on the surfaces. This paper describes an investigation to determine if ferrite possesses magnetic qualities suitable for insertion device applications. The type of ferrite investigated, MMPA Ceramic 8 from Stackpolemore » Inc., was found to be acceptable for insertion device applications.« less

High to ultra-high power electrical energy storage.

PubMed

Sherrill, Stefanie A; Banerjee, Parag; Rubloff, Gary W; Lee, Sang Bok

2011-12-14

High power electrical energy storage systems are becoming critical devices for advanced energy storage technology. This is true in part due to their high rate capabilities and moderate energy densities which allow them to capture power efficiently from evanescent, renewable energy sources. High power systems include both electrochemical capacitors and electrostatic capacitors. These devices have fast charging and discharging rates, supplying energy within seconds or less. Recent research has focused on increasing power and energy density of the devices using advanced materials and novel architectural design. An increase in understanding of structure-property relationships in nanomaterials and interfaces and the ability to control nanostructures precisely has led to an immense improvement in the performance characteristics of these devices. In this review, we discuss the recent advances for both electrochemical and electrostatic capacitors as high power electrical energy storage systems, and propose directions and challenges for the future. We asses the opportunities in nanostructure-based high power electrical energy storage devices and include electrochemical and electrostatic capacitors for their potential to open the door to a new regime of power energy.

Low-dimensional carbon and MXene-based electrochemical capacitor electrodes.

PubMed

Yoon, Yeoheung; Lee, Keunsik; Lee, Hyoyoung

2016-04-29

Due to their unique structure and outstanding intrinsic physical properties such as extraordinarily high electrical conductivity, large surface area, and various chemical functionalities, low-dimension-based materials exhibit great potential for application in electrochemical capacitors (ECs). The electrical properties of electrochemical capacitors are determined by the electrode materials. Because energy charge storage is a surface process, the surface properties of the electrode materials greatly influence the electrochemical performance of the cell. Recently, graphene, a single layer of sp(2)-bonded carbon atoms arrayed into two-dimensional carbon nanomaterial, has attracted wide interest as an electrode material for electrochemical capacitor applications due to its unique properties, including a high electrical conductivity and large surface area. Several low-dimensional materials with large surface areas and high conductivity such as onion-like carbons (OLCs), carbide-derived carbons (CDCs), carbon nanotubes (CNTs), graphene, metal hydroxide, transition metal dichalcogenides (TMDs), and most recently MXene, have been developed for electrochemical capacitors. Therefore, it is useful to understand the current issues of low-dimensional materials and their device applications.

Structural design of high-performance capacitive accelerometers using parametric optimization with uncertainties

NASA Astrophysics Data System (ADS)

Teves, André da Costa; Lima, Cícero Ribeiro de; Passaro, Angelo; Silva, Emílio Carlos Nelli

2017-03-01

Electrostatic or capacitive accelerometers are among the highest volume microelectromechanical systems (MEMS) products nowadays. The design of such devices is a complex task, since they depend on many performance requirements, which are often conflicting. Therefore, optimization techniques are often used in the design stage of these MEMS devices. Because of problems with reliability, the technology of MEMS is not yet well established. Thus, in this work, size optimization is combined with the reliability-based design optimization (RBDO) method to improve the performance of accelerometers. To account for uncertainties in the dimensions and material properties of these devices, the first order reliability method is applied to calculate the probabilities involved in the RBDO formulation. Practical examples of bulk-type capacitive accelerometer designs are presented and discussed to evaluate the potential of the implemented RBDO solver.

Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Repins, Ingrid; Mansfield, Lorelle; Kanevce, Ana

Band-edge effects -- including grading, electrostatic fluctuations, bandgap fluctuations, and band tails -- affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In,Ga)Se2 devices, recent increases in diffusion length imply changes to optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties and defect formation energies, is examined.

Synergistic effects from graphene and carbon nanotubes endow ordered hierarchical structure foams with a combination of compressibility, super-elasticity and stability and potential application as pressure sensors

NASA Astrophysics Data System (ADS)

Kuang, Jun; Dai, Zhaohe; Liu, Luqi; Yang, Zhou; Jin, Ming; Zhang, Zhong

2015-05-01

Nanostructured carbon material based three-dimensional porous architectures have been increasingly developed for various applications, e.g. sensors, elastomer conductors, and energy storage devices. Maintaining architectures with good mechanical performance, including elasticity, load-bearing capacity, fatigue resistance and mechanical stability, is prerequisite for realizing these functions. Though graphene and CNT offer opportunities as nanoscale building blocks, it still remains a great challenge to achieve good mechanical performance in their microarchitectures because of the need to precisely control the structure at different scales. Herein, we fabricate a hierarchical honeycomb-like structured hybrid foam based on both graphene and CNT. The resulting materials possess excellent properties of combined high specific strength, elasticity and mechanical stability, which cannot be achieved in neat CNT and graphene foams. The improved mechanical properties are attributed to the synergistic-effect-induced highly organized, multi-scaled hierarchical architectures. Moreover, with their excellent electrical conductivity, we demonstrated that the hybrid foams could be used as pressure sensors in the fields related to artificial skin.Nanostructured carbon material based three-dimensional porous architectures have been increasingly developed for various applications, e.g. sensors, elastomer conductors, and energy storage devices. Maintaining architectures with good mechanical performance, including elasticity, load-bearing capacity, fatigue resistance and mechanical stability, is prerequisite for realizing these functions. Though graphene and CNT offer opportunities as nanoscale building blocks, it still remains a great challenge to achieve good mechanical performance in their microarchitectures because of the need to precisely control the structure at different scales. Herein, we fabricate a hierarchical honeycomb-like structured hybrid foam based on both graphene and CNT. The resulting materials possess excellent properties of combined high specific strength, elasticity and mechanical stability, which cannot be achieved in neat CNT and graphene foams. The improved mechanical properties are attributed to the synergistic-effect-induced highly organized, multi-scaled hierarchical architectures. Moreover, with their excellent electrical conductivity, we demonstrated that the hybrid foams could be used as pressure sensors in the fields related to artificial skin. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr00841g

Application of Mobility Spectrum Analysis to Modern Multi-layered IR Device Material

NASA Astrophysics Data System (ADS)

Brown, Alexander Earl

Modern detector materials used for infrared (IR) imaging purposes contain complex multi-layered architectures, making more robust characterization techniques necessary. In order to determine mutli-carrier transport properties in the presence of mixed conduction, variable-field Hall characterization can be performed and then analyzed using mobility spectrum analysis to extract parameters of interest. Transport parameters are expected to aid in modeling and simulation of materials and can be used in optimization of particular problem areas. The performances of infrared devices ultimately depend on transport mechanisms, so an accurate determination becomes paramount. This work focuses on the characterization of two materials at the forefront of IR detectors; incumbent, tried and true, HgCdTe technologies and emergent III-V based superlattice structures holding much promise for future detector purposes. Ex-situ doped long-wave planar devices and in-situ doped mid-wave dual-layer heterojunctions (P+/n architecture) HgCdTe structures are explored with regards to substrate choice, namely lattice-matched CdZnTe and lattice-mismatched Si or GaAs. A detailed study of scattering mechanisms reveal that growth on lattice-mismatched substrates leads to dislocation scattering limited mobility at low temperature, correlating with extrinsically limited minority carrier lifetime and excesses diode tunneling current, resulting in overall lower performance. Mobility spectrum analysis proves to be an effective diagnostic on performance as well as providing insight in surface, substrate-interface, and minority carrier transport. Two main issues limiting performance of III-V based superlattices are addressed; high residual doping backgrounds and surface passivation. Mobility spectrum analysis proves to be a reliable method of determining background doping levels. Modest improvements are obtained via post-growth thermal annealing, but results suggest future efforts should be placed upon growth improvements. Passivation efforts using charged electret dielectric show promise but further refinements would be needed. Thiol passivation is identified as a successful passivant of Be-doped p-type InAs/GaSb long-wave absorbers using mobility spectrum analysis, correlating with fabricated device dark current. Mobility spectrum analysis demonstrates it will be indispensable in future development of III-V material.

Recent progress in efficient hybrid lead halide perovskite solar cells

PubMed Central

Cui, Jin; Yuan, Huailiang; Li, Junpeng; Xu, Xiaobao; Shen, Yan; Lin, Hong; Wang, Mingkui

2015-01-01

The efficiency of perovskite solar cells (PSCs) has been improved from 9.7 to 19.3%, with the highest value of 20.1% achieved in 2014. Such a high photovoltaic performance can be attributed to optically high absorption characteristics and balanced charge transport properties with long diffusion lengths of the hybrid lead halide perovskite materials. In this review, some fundamental details of hybrid lead iodide perovskite materials, various fabrication techniques and device structures are described, aiming for a better understanding of these materials and thus highly efficient PSC devices. In addition, some advantages and open issues are discussed here to outline the prospects and challenges of using perovskites in commercial photovoltaic devices. PMID:27877815

Program for the development of high temperature electrical materials and components

NASA Technical Reports Server (NTRS)

Neff, W. S.; Lowry, L. R.

1972-01-01

Evaluation of high temperature, space-vacuum performance of selected electrical materials and components, high temperature capacitor development, and evaluation, construction, and endurance testing of compression sealed pyrolytic boron nitride slot insulation are described. The first subject above covered the aging evaluation of electrical devices constructed from selected electrical materials. Individual materials performances were also evaluated and reported. The second subject included study of methods of improving electrical performance of pyrolytic boron nitride capacitors. The third portion was conducted to evaluate the thermal and electrical performance of pyrolytic boron nitride as stator slot liner material under varied temperature and compressive loading. Conclusions and recommendations are presented.

Operation mode switchable charge-trap memory based on few-layer MoS2

NASA Astrophysics Data System (ADS)

Hou, Xiang; Yan, Xiao; Liu, Chunsen; Ding, Shijin; Zhang, David Wei; Zhou, Peng

2018-03-01

Ultrathin layered two-dimensional (2D) semiconductors like MoS2 and WSe2 have received a lot of attention because of their excellent electrical properties and potential applications in electronic devices. We demonstrate a charge-trap memory with two different tunable operation modes based on a few-layer MoS2 channel and an Al2O3/HfO2/Al2O3 charge storage stack. Our device shows excellent memory properties under the traditional three-terminal operation mode. More importantly, unlike conventional charge-trap devices, this device can also realize the memory performance with just two terminals (drain and source) because of the unique atomic crystal electrical characteristics. Under the two-terminal operation mode, the erase/program current ratio can reach up to 104 with a stable retention property. Our study indicates that the conventional charge-trap memory cell can also realize the memory performance without the gate terminal based on novel two dimensional materials, which is meaningful for low power consumption and high integration density applications.

Applications of high average power nonlinear optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velsko, S.P.; Krupke, W.F.

1996-02-05

Nonlinear optical frequency convertors (harmonic generators and optical parametric oscillators are reviewed with an emphasis on high average power performance and limitations. NLO materials issues and NLO device designs are discussed in reference to several emerging scientific, military and industrial commercial applications requiring {approx} 100 watt average power level in the visible and infrared spectral regions. Research efforts required to enable practical {approx} 100 watt class NLO based laser systems are identified.

High-performance ferroelectric and magnetoresistive materials for next-generation thermal detector arrays

NASA Astrophysics Data System (ADS)

Todd, Michael A.; Donohue, Paul P.; Watton, Rex; Williams, Dennis J.; Anthony, Carl J.; Blamire, Mark G.

2002-12-01

This paper discusses the potential thermal imaging performance achievable from thermal detector arrays and concludes that the current generation of thin-film ferroelectric and resistance bolometer based detector arrays are limited by the detector materials used. It is proposed that the next generation of large uncooled focal plane arrays will need to look towards higher performance detector materials - particularly if they aim to approach the fundamental performance limits and compete with cooled photon detector arrays. Two examples of bolometer thin-film materials are described that achieve high performance from operating around phase transitions. The material Lead Scandium Tantalate (PST) has a paraelectric-to-ferroelectric phase transition around room temperature and is used with an applied field in the dielectric bolometer mode for thermal imaging. PST films grown by sputtering and liquid-source CVD have shown merit figures for thermal imaging a factor of 2 to 3 times higher than PZT-based pyroelectric thin films. The material Lanthanum Calcium Manganite (LCMO) has a paramagnetic to ferromagnetic phase transition around -20oC. This paper describes recent measurements of TCR and 1/f noise in pulsed laser-deposited LCMO films on Neodymium Gallate substrates. These results show that LCMO not only has high TCR's - up to 30%/K - but also low 1/f excess noise, with bolometer merit figures at least an order of magnitude higher than Vanadium Oxide, making it ideal for the next generation of microbolometer arrays. These high performance properties come at the expense of processing complexities and novel device designs will need to be introduced to realize the potential of these materials in the next generation of thermal detectors.

Visualizing staggered fields and analyzing electromagnetic data with PerceptEM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shasharina, Svetlana

This project resulted in VSimSP: a software for simulating large photonic devices of high-performance computers. It includes: GUI for Photonics Simulations; High-Performance Meshing Algorithm; 2d Order Multimaterials Algorithm; Mode Solver for Waveguides; 2d Order Material Dispersion Algorithm; S Parameters Calculation; High-Performance Workflow at NERSC ; and Large Photonic Devices Simulation Setups We believe we became the only company in the world which can simulate large photonics devices in 3D on modern supercomputers without the need to split them into subparts or do low-fidelity modeling. We started commercial engagement with a manufacturing company.

Performance analysis of GeSn-alloy-based multiple quantum well transistor laser

NASA Astrophysics Data System (ADS)

Ranjan, Ravi; Pareek, Prakash; Anwer Askari, Syed Sadique; Das, Mukul K.

2018-02-01

The Group IV Photonics (GFP) which include an alloy of Si, Ge & Sn that gives a direct bandgap material (GeSn, SiGeSn) in near and mid-IR region used as an active material in photonics devices. The multiple quantum well SiGeSn/GeSn transistor laser structure is considered in this paper and performance parameters are evaluated for the same. The result shows that the threshold base current density (2.6 kA/cm2) for the proposed device initially decreases with increasing number of quantum well (QW) and later on it saturates. The current gain and output photon density of the device decreases and increases respectively, with increasing number of QW.

Sputtered highly oriented PZT thin films for MEMS applications

NASA Astrophysics Data System (ADS)

Kalpat, Sriram S.

Recently there has been an explosion of interest in the field of micro-electro-mechanical systems (MEMS). MEMS device technology has become critical in the growth of various fields like medical, automotive, chemical, and space technology. Among the many applications of ferroelectric thin films in MEMS devices, microfluidics is a field that has drawn considerable amount of research from bio-technology industries as well as chemical and semiconductor manufacturing industries. PZT thin films have been identified as best suited materials for micro-actuators and micro-sensors used in MEMS devices. A promising application for piezoelectric thin film based MEMS devices is disposable drug delivery systems that are capable of sensing biological parameters, mixing and delivering minute and precise amounts of drugs using micro-pumps or micro mixers. These devices call for low driving voltages, so that they can be battery operated. Improving the performance of the actuator material is critical in achieving battery operated disposal drug delivery systems. The device geometry and power consumption in MEMS devices largely depends upon the piezoelectric constant of the films, since they are most commonly used to convert electrical energy into a mechanical response of a membrane or cantilever and vice versa. Phenomenological calculation on the crystal orientation dependence of piezoelectric coefficients for PZT single crystal have reported a significant enhancement of the piezoelectric d33 constant by more than 3 times along [001] in the rhombohedral phase as compared to the conventionally used orientation PZT(111) since [111] is the along the spontaneous polarization direction. This could mean considerable improvement in the MEMS device performance and help drive the operating voltages lower. The motivation of this study is to investigate the crystal orientation dependence of both dielectric and piezoelectric coefficients of PZT thin films in order to select the appropriate orientation that could improve the MEMS device performance. Potential application of these devices is as battery operated disposable drug delivery systems. This work will also investigate the fabrication of a flexural plate wave based microfluidic device using the PZT thin film of appropriate orientation that would enhance the device performance. (Abstract shortened by UMI.)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bradshaw, Nathan P.; Severt, Sean Y.; Wang, Zhaoying

Biocompatible materials capable of controlled actuation under biologically relevant conditions are in high demand for use in a number of biomedical applications. Recently, we demonstrated that a composite material composed of silk biopolymer and the conducting polymer poly(pyrrole) can bend under an applied voltage using a simple bilayer device. Here we present further characterization of these bilayer actuators using time of flight secondary ion mass spectrometry, and provide clarification on the mechanism of actuation and factors affecting device performance and stability. We will discuss the results of this study in the context of strategies for optimization of device performance.

Single-Crystalline InGaAs/InP Dense Micro-Pillar Forest on Poly-Silicon Substrates for Low-Cost High-Efficiency Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang-Hasnain, Constance

2015-05-04

The ultimate goal of this project is to develop a photovoltaic system high conversion efficiency (>20%) using high quality III-V compound-based three-dimensional micro-structures on silicon and poly-silicon. Such a PV-system could be of very low cost due to minimum usages of III-V materials. This project will address the barriers that currently hamper the performance of solar cells based on three-dimensional micro-structures. To accomplish this goal the project is divided into 4 tasks, each dealing with a different aspect of the project: materials quality, micropillar growth control, light management, and pillar based solar cells. Materials Quality: the internal quantum efficiency (IQE)more » - by which is meant here the internal fluorescence yield - of the micro-pillars has to be increased. We aim at achieving an IQE of 45% by the end of the first year. By the end of the second year there will be a go-no-go milestone of 65% IQE. By the end of year 3 and 4 we aim to achieve 75% and 90% IQE, respectively. Micropillar growth control: dense forests of micropillars with high fill ratios need to be grown. Pillars within forests should show minimum variations in size. We aim at achieving fill ratios of 2%, 10%, >15%, >20% in years 1, 2, 3, and 4, respectively. Variations in dimension should be minimized by site-controlled growth of pillars. By the end of year 1 we will aim at achieving site-controlled growth with > 15% yield. By end of year 2 the variation of critical pillar dimensions should be less than 25%. Light management: high light absorption in the spectral range of the sun has been to be demonstrated for the micropillar forests. By the end of year 1 we will employ FDTD simulation techniques to demonstrate that pillar forests with fill ratios <20% can achieve 99% light absorption. By end of year 2 our original goal was to demonstrate >85% absorption. By end of year 3 > 90% absorption should be demonstrated. Pillar based solar cells: devices will be studied to explore ways to achieve high open-circuit voltages which will lead to high efficiency micropillar-based solar cells. We will start on single pillar devices and the findings in these studies should pave the way for devices based on forests/ arrays of pillars. By the end of the second year we aim to demonstrate a single pillar device with an open-circuit voltage of 0.7 V, as well as a pillar-forest based device with 8% conversion efficiency. By the end of year 3 these numbers should be improved to 0.9 V open-circuit voltage for single pillar devices and >15% efficiency for forest/array-based devices. We will aim to realize a device with 20% efficiency by the end of the project period.« less

Highly Crystalline C8-BTBT Thin-Film Transistors by Lateral Homo-Epitaxial Growth on Printed Templates.

PubMed

Janneck, Robby; Pilet, Nicolas; Bommanaboyena, Satya Prakash; Watts, Benjamin; Heremans, Paul; Genoe, Jan; Rolin, Cedric

2017-11-01

Highly crystalline thin films of organic semiconductors offer great potential for fundamental material studies as well as for realizing high-performance, low-cost flexible electronics. The fabrication of these films directly on inert substrates is typically done by meniscus-guided coating techniques. The resulting layers show morphological defects that hinder charge transport and induce large device-to-device variability. Here, a double-step method for organic semiconductor layers combining a solution-processed templating layer and a lateral homo-epitaxial growth by a thermal evaporation step is reported. The epitaxial regrowth repairs most of the morphological defects inherent to meniscus-guided coatings. The resulting film is highly crystalline and features a mobility increased by a factor of three and a relative spread in device characteristics improved by almost half an order of magnitude. This method is easily adaptable to other coating techniques and offers a route toward the fabrication of high-performance, large-area electronics based on highly crystalline thin films of organic semiconductors. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Maximizing the performance of photothermal actuators by combining smart materials with supplementary advantages

PubMed Central

Wang, Tongyu; Torres, David; Fernández, Félix E.; Wang, Chuan; Sepúlveda, Nelson

2017-01-01

The search for higher-performance photothermal microactuators has typically involved unavoidable trade-offs that hinder the demonstration of ubiquitous devices with high energy density, speed, flexibility, efficiency, sensitivity, and multifunctionality. Improving some of these parameters often implies deterioration of others. Photothermal actuators are driven by the conversion of absorbed optical energy into thermal energy, which, by different mechanisms, can produce mechanical displacement of a structure. We present a device that has been strategically designed to show high performance in every metric and respond to optical radiation of selected wavelength bands. The device combines the large energy densities and sensitivity of vanadium dioxide (VO2)–based actuators with the wavelength-selective absorption properties of single-walled carbon nanotube (SWNT) films of different chiralities. SWNT coatings increased the speed of VO2 actuators by a factor of 2 while decreasing the power consumption by approximately 50%. Devices coated with metallic SWNT were found to be 1.57 times more responsive to red light than to near-infrared, whereas semiconducting SWNT coatings resulted in 1.42 times higher responsivities to near-infrared light than to red light. The added functionality establishes a link between optical and mechanical domains of high-performance photoactuators and enables the future development of mechanical logic gates and electronic devices that are triggered by optical radiation from different frequency bands. PMID:28439553

Transparent conductors based on microscale/nanoscale materials for high performance devices

NASA Astrophysics Data System (ADS)

Gao, Tongchuan

Transparent conductors are important as the top electrode for a variety of optoelectronic devices, including solar cells, light-emitting diodes (LEDs), at panel displays, and touch screens. Doped indium tin oxide (ITO) thin films are the predominant transparent conductor material. However, ITO thin films are brittle, making them unsuitable for the emerging flexible devices, and suffer from high material and processing cost. In my thesis, we developed a variety of transparent conductors toward a performance comparable with or superior to ITO thin films, with lower cost and potential for scalable manufacturing. Metal nanomesh (NM), hierarchical graphene/metal microgrid (MG), and hierarchical metal NM/MG materials were investigated. Simulation methods were used as a powerful tool to predict the transparency and sheet resistance of the transparent conductors by solving Maxwell's equations and Poisson's equation. Affordable and scalable fabrication processes were developed thereafter. Transparent conductors with over 90% transparency and less than 10 O/square sheet resistance were successfully fabricated on both rigid and flexible substrates. Durability tests, such as bending, heating and tape tests, were carried out to evaluate the robustness of the samples. Haze factor, which characterizes how blurry a transparent conductor appears, was also studied in-depth using analytical calculation and numerical simulation. We demonstrated a tunable haze factor for metal NM transparent conductors and analyzed the principle for tuning the haze factor. Plasmonic effects, excited by some transparent conductors, can lead to enhanced performance in photovoltaic devices. We systematically studied the effect of incorporating metal NM into ultrathin film silicon solar cells using numerical simulation, with the aid of optimization algorithms to reduce the optimization time. Mechanisms contributing to the enhanced performance were then identified and analyzed. Over 72% enhancement in short-circuit current-density was demonstrated by the optimal solar cell compared with 300-nm-thick Si solar cell with antireflection coating and silver back reflector.

Interface Engineering of Organic Schottky Barrier Solar Cells and Its Application in Enhancing Performances of Planar Heterojunction Solar Cells

NASA Astrophysics Data System (ADS)

Jin, Fangming; Su, Zisheng; Chu, Bei; Cheng, Pengfei; Wang, Junbo; Zhao, Haifeng; Gao, Yuan; Yan, Xingwu; Li, Wenlian

2016-05-01

In this work, we describe the performance of organic Schottky barrier solar cells with the structure of ITO/molybdenum oxide (MoOx)/boron subphthalocyanine chloride (SubPc)/bathophenanthroline (BPhen)/Al. The SubPc-based Schottky barrier solar cells exhibited a short-circuit current density (Jsc) of 2.59 mA/cm2, an open-circuit voltage (Voc) of 1.06 V, and a power conversion efficiency (PCE) of 0.82% under simulated AM1.5 G solar illumination at 100 mW/cm2. Device performance was substantially enhanced by simply inserting thin organic hole transport material into the interface of MoOx and SubPc. The optimized devices realized a 180% increase in PCE of 2.30% and a peak Voc as high as 1.45 V was observed. We found that the improvement is due to the exciton and electron blocking effect of the interlayer and its thickness plays a vital role in balancing charge separation and suppressing quenching effect. Moreover, applying such interface engineering into MoOx/SubPc/C60 based planar heterojunction cells substantially enhanced the PCE of the device by 44%, from 3.48% to 5.03%. Finally, we also investigated the requirements of the interface material for Schottky barrier modification.

Interface Engineering of Organic Schottky Barrier Solar Cells and Its Application in Enhancing Performances of Planar Heterojunction Solar Cells.

PubMed

Jin, Fangming; Su, Zisheng; Chu, Bei; Cheng, Pengfei; Wang, Junbo; Zhao, Haifeng; Gao, Yuan; Yan, Xingwu; Li, Wenlian

2016-05-17

In this work, we describe the performance of organic Schottky barrier solar cells with the structure of ITO/molybdenum oxide (MoOx)/boron subphthalocyanine chloride (SubPc)/bathophenanthroline (BPhen)/Al. The SubPc-based Schottky barrier solar cells exhibited a short-circuit current density (Jsc) of 2.59 mA/cm(2), an open-circuit voltage (Voc) of 1.06 V, and a power conversion efficiency (PCE) of 0.82% under simulated AM1.5 G solar illumination at 100 mW/cm(2). Device performance was substantially enhanced by simply inserting thin organic hole transport material into the interface of MoOx and SubPc. The optimized devices realized a 180% increase in PCE of 2.30% and a peak Voc as high as 1.45 V was observed. We found that the improvement is due to the exciton and electron blocking effect of the interlayer and its thickness plays a vital role in balancing charge separation and suppressing quenching effect. Moreover, applying such interface engineering into MoOx/SubPc/C60 based planar heterojunction cells substantially enhanced the PCE of the device by 44%, from 3.48% to 5.03%. Finally, we also investigated the requirements of the interface material for Schottky barrier modification.

Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response

DOE PAGES

Feng, Wei; Wu, Jing-Bin; Li, Xiaoli; ...

2015-05-20

In this paper, we demonstrate the strategies and principles for the performance improvement of layered semiconductor based photodetectors using multilayer indium selenide (InSe) as the model material. It is discovered that multiple reflection interference at the interfaces in the phototransistor device leads to a thickness-dependent photo-response, which provides a guideline to improve the performance of layered semiconductor based phototransistors. The responsivity and detectivity of InSe nanosheet phototransistor can be adjustable using applied gate voltage. Our InSe nanosheet phototransistor exhibits ultrahigh responsivity and detectivity. An ultrahigh external photo-responsivity of ~10 4 A W -1 can be achieved from broad spectra rangingmore » from UV to near infrared wavelength using our InSe nanosheet photodetectors. The detectivity of multilayer InSe devices is ~10 12 to 10 13 Jones, which surpasses that of the currently exploited InGaAs photodetectors (10 11 to 10 12 Jones). Finally, this research shows that multilayer InSe nanosheets are promising materials for high performance photodetectors.« less

Compact, High Power, Multi-Spectral Mid-Infrared Semiconductor Laser Package

NASA Astrophysics Data System (ADS)

Guo, Bujin; Hwang, Wen-Yen; Lin, Chich-Hsiang

2001-10-01

Through a vertically integrated effort involving atomic level material engineering, advanced device processing development, state-of-the-art optomechanical packaging, and thermal management, Applied Optoelectronics, Inc. (AOI), University of Houston (U H), and Physical Science, Inc. (PSI) have made progress in both Sb-based type-II semiconductor material and in P-based type-I laser device development. We have achieved record performance on inP based quantum cascade continuous wave (CW) laser (with more than 5 mW CW power at 210 K). Grating-coupled external-cavity quantum cascade lasers were studied for temperatures from 20 to 230 K. A tuning range of 88 nm has been obtained at 80 K. The technology can be made commercially available and represents a significant milestone with regard to the Dual Use Science and Technology (DUST) intention of fostering dual use commercial technology for defense need. AOI is the first commercial company to ship products of this licensed technology.

Iron Oxide Nanosheets and Pulse-Electrodeposited Ni-Co-S Nanoflake Arrays for High-Performance Charge Storage.

PubMed

Khani, Hadi; Wipf, David O

2017-03-01

Nanostructured nickel cobalt sulfide (Ni 4.5 Co 4.5 S 8 ) has been prepared through a single-step pulse-electrodeposition method. Iron oxide nanosheets at hollow graphite shells (Fe 3 O 4 @g-shells) were prepared from graphite-coated iron carbide/α-Fe (g-Fe 3 C/Fe) in a two-step annealing/electrochemical cycling process. Electrochemical characterization of the Ni 4.5 Co 4.5 S 8 and g-Fe 3 C/Fe materials showed that both have high specific capacities (206 mAh g -1 and 147 mAh g -1 at 1 A g -1 ) and excellent rate capabilities (∼95% and ∼83% retention at 20 A g -1 , respectively). To demonstrate the advantageous pairing of these high rate materials, a full-cell battery with supercapacitor-like power behavior was assembled with Ni 4.5 Co 4.5 S 8 and g-Fe 3 C/Fe as the positive and negative electrodes, respectively. The (Ni 4.5 Co 4.5 S 8 //g-Fe 3 C/Fe) device could be reversibly operated in a 0.0-1.6 V potential window, delivering an impressive specific energy of 89 Wh kg -1 at 1.1 kW kg -1 and a remarkable rate performance of 61 Wh kg -1 at a very high specific power of 38.5 kW kg -1 . Additionally, long-term cycling demonstrated that the asymmetric full cell assembly retained 91% of its initial specific capacity after 2500 cycles at 40 A g -1 . The performance features of this device are among the best for iron oxide/hydroxide and bimetallic sulfide based energy storage devices to date, thereby giving insight into design principles for the next generation high-energy-density devices.

Molecular Engineering Strategy for High Efficiency Fullerene-Free Organic Solar Cells Using Conjugated 1,8-Naphthalimide and Fluorenone Building Blocks.

PubMed

Do, Thu Trang; Pham, Hong Duc; Manzhos, Sergei; Bell, John M; Sonar, Prashant

2017-05-24

We designed, synthesized, and characterized a series of novel electron deficient small molecule nonfullerene acceptors based on 1,8-naphthalimide (NAI) and 9-fluorenone (FN) with different branched alkyl chains using various techniques. These molecules are based on an acceptor-donor-acceptor-donor-acceptor (A1-D-A2-D-A1) molecular design configuration with NAI as the end-capping acceptor (A1), FN as electron-withdrawing central (A2) group, and thiophene ring as a donor (D) unit. These materials are named as NAI-FN-NAI (BO) and NAI-FN-NAI (HD) where BO and HD represent butyloctyl and hexyldecyl alkyl groups, respectively. To further modify energy levels of these materials, we converted the weak electron withdrawing ketonic group (C═O) attached to the FN moiety of NAI-FN-NAI (BO) to a stronger electron withdrawing cyano group (C≡N) to obtain the compound NAI-FCN-NAI (BO) by keeping the same alkyl chain. The optical, electrochemical, and thermal properties of the new acceptors were studied. The materials exhibited higher to medium band gaps, low lowest unoccupied molecular orbital (LUMO) energy levels, and highly thermally stable properties. Organic solar cell devices employing conventional poly(3-hexylthiophene) (P3HT) a donor polymer and the newly designed small molecules as the acceptor were investigated. Among all new materials, organic solar cell devices based on NAI-FN-NAI (BO) as an acceptor exhibit the highest performance with an open circuit voltage (V OC ) of 0.88 V, a short-circuit current density (J SC ) of 9.1 mAcm -2 , a fill factor (FF) of 45%, and an overall power conversion efficiency (PCE) of 3.6%. This is the first report of 9-fluorenone based nonfullerene acceptor with P3HT donor in organic solar cell devices with such a promising performance.

Sol-gel Technology and Advanced Electrochemical Energy Storage Materials

NASA Technical Reports Server (NTRS)

Chu, Chung-tse; Zheng, Haixing

1996-01-01

Advanced materials play an important role in the development of electrochemical energy devices such as batteries, fuel cells, and electrochemical capacitors. The sol-gel process is a versatile solution for use in the fabrication of ceramic materials with tailored stoichiometry, microstructure, and properties. This processing technique is particularly useful in producing porous materials with high surface area and low density, two of the most desirable characteristics for electrode materials. In addition,the porous surface of gels can be modified chemically to create tailored surface properties, and inorganic/organic micro-composites can be prepared for improved material performance device fabrication. Applications of several sol-gel derived electrode materials in different energy storage devices are illustrated in this paper. V2O5 gels are shown to be a promising cathode material for solid state lithium batteries. Carbon aerogels, amorphous RuO2 gels and sol-gel derived hafnium compounds have been studied as electrode materials for high energy density and high power density electrochemical capacitors.

Photoelectrochemical devices for solar water splitting - materials and challenges.

PubMed

Jiang, Chaoran; Moniz, Savio J A; Wang, Aiqin; Zhang, Tao; Tang, Junwang

2017-07-31

It is widely accepted within the community that to achieve a sustainable society with an energy mix primarily based on solar energy we need an efficient strategy to convert and store sunlight into chemical fuels. A photoelectrochemical (PEC) device would therefore play a key role in offering the possibility of carbon-neutral solar fuel production through artificial photosynthesis. The past five years have seen a surge in the development of promising semiconductor materials. In addition, low-cost earth-abundant co-catalysts are ubiquitous in their employment in water splitting cells due to the sluggish kinetics of the oxygen evolution reaction (OER). This review commences with a fundamental understanding of semiconductor properties and charge transfer processes in a PEC device. We then describe various configurations of PEC devices, including single light-absorber cells and multi light-absorber devices (PEC, PV-PEC and PV/electrolyser tandem cell). Recent progress on both photoelectrode materials (light absorbers) and electrocatalysts is summarized, and important factors which dominate photoelectrode performance, including light absorption, charge separation and transport, surface chemical reaction rate and the stability of the photoanode, are discussed. Controlling semiconductor properties is the primary concern in developing materials for solar water splitting. Accordingly, strategies to address the challenges for materials development in this area, such as the adoption of smart architectures, innovative device configuration design, co-catalyst loading, and surface protection layer deposition, are outlined throughout the text, to deliver a highly efficient and stable PEC device for water splitting.

Experimental investigation of the contact resistance of Graphene/MoS2 interface treated with O2 plasma

NASA Astrophysics Data System (ADS)

Lu, Qin; Liu, Yan; Han, Genquan; Fang, Cizhe; Shao, Yao; Zhang, Jincheng; Hao, Yue

2018-02-01

High contact resistance has been a major bottleneck for MoS2 to achieve high performances among two-dimensional material based optoelectronic and electronic devices. In this study, we investigate the contact resistances of different layered graphene film with MoS2 film with Ti/Au electrodes under different O2 plasma treatment time using the circular transmission line model (CTLM). Annealing process followed O2 plasma process to reduce the oxygen element introduced. Raman and X-ray photoelectric spectroscopy were used to analyze the quality of the materials. Finally, the current and voltage curve indicates good linear characteristics. Under the optimized condition of the O2 plasma treatment, a relatively low contact resistance (∼35.7 Ohm mm) without back gate voltage in single-layer graphene/MoS2 structure at room temperature was achieved compared with the existing reports. This method of introducing graphene as electrodes for MoS2 film demonstrates a remarkable ability to improve the contact resistance, without additional channel doping for two-dimensional materials based devices, which paves the way for MoS2 to be a more promising channel material in optoelectronic and electronic integration.

Cooling device featuring thermoelectric and diamond materials for temperature control of heat-dissipating devices

NASA Technical Reports Server (NTRS)

Vandersande, Ian W. (Inventor); Ewell, Richard (Inventor); Fleurial, Jean-Pierre (Inventor); Lyon, Hylan B. (Inventor)

1998-01-01

A cooling device for lowering the temperature of a heat-dissipating device. The cooling device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with the heat-dissipating device. During operation, heat flows from the heat-dissipating device into the heat-conducting substrate, where it is spread out over a relatively large area. A thermoelectric cooling material (e.g., a Bi.sub.2 Te.sub.3 -based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. Application of electrical power to the thermoelectric material drives the thermoelectric material to pump heat into a second heat-conducting substrate which, in turn, is attached to a heat sink.

Model For Bending Actuators That Use Electrostrictive Graft Elastomers

NASA Technical Reports Server (NTRS)

Costen, Robert C.; Su, Ji; Harrison, Joycelyn S.

2001-01-01

Recently, it was reported that an electrostrictive graft elastomer exhibits large electric field-induced strain (4%). Combined with its high mechanical modulus, the elastomer can offer very promising electromechanical properties, in terms of output mechanical energy density, for an electroactive polymeric material. Therefore, it has been considered as one of the candidates that can be used in high performance, low mass actuation devices in many aerospace applications. Various bilayer- based bending actuators have been designed and fabricated. An analytic model based on beam theory in the strength of materials has been derived for the transverse deflection, or curvature, and the longitudinal strain of the bi-layer beam. The curvature and strain are functions of the applied voltage and the thickness, width, and Young s modulus of the active and passive layers. The model can be used to optimize the performance of electrostrictive graft elastomer-based actuators to meet the requirements of various applications. In this presentation, optimization and sensitivity studies are applied to the bending performance of such actuators.

Study of series-connected polymer tandem solar cells based on a highly efficient donor material of PTB7-Th

NASA Astrophysics Data System (ADS)

Zang, Yue; Gao, Xiumin; Xin, Qing; Lin, Jun; Zhao, Jufeng

2017-06-01

A highly efficient donor polymer, PTB7-Th, combined with acceptor fullerene PC71BM was introduced as the subcell in the series-connected tandem devices to achieve high-performance polymer tandem solar cells. Design of the device architecture was investigated using modeling and simulation methods to identify the optimal structure and to predict performance of the tandem cells. To address the challenge of current matching between the constituent subcells, the effect of active layer thickness, different device structure, and use of ultrathin Ag film were analyzed. It was found that the distribution of optical intensity in the tandem structure can be optimized through the optical spacer effect of interfacial layers and micro-cavity effect derived from the embedded ultrathin Ag film. Our results indicate that the efficient light utilization with appropriate subcells can allow achievement of power conversion efficiency of 12%, which can be 25% higher than that of a single cell of PTB7-Th.

Nuclear fuels for very high temperature applications

NASA Astrophysics Data System (ADS)

Lundberg, L. B.; Hobbins, R. R.

The success of the development of nuclear thermal propulsion devices and thermionic space nuclear power generation systems depends on the successful utilization of nuclear fuel materials at temperatures in the range 2000 to 3500 K. Problems associated with the utilization of uranium bearing fuel materials at these very high temperatures while maintaining them in the solid state for the required operating times are addressed. The critical issues addressed include evaporation, melting, reactor neutron spectrum, high temperature chemical stability, fabrication, fission induced swelling, fission product release, high temperature creep, thermal shock resistance, and fuel density, both mass and fissile atom. Candidate fuel materials for this temperature range are based on UO2 or uranium carbides. Evaporation suppression, such as a sealed cladding, is required for either fuel base. Nuclear performance data needed for design are sparse for all candidate fuel forms in this temperature range, especially at the higher temperatures.

Design optimization of PVDF-based piezoelectric energy harvesters.

PubMed

Song, Jundong; Zhao, Guanxing; Li, Bo; Wang, Jin

2017-09-01

Energy harvesting is a promising technology that powers the electronic devices via scavenging the ambient energy. Piezoelectric energy harvesters have attracted considerable interest for their high conversion efficiency and easy fabrication in minimized sensors and transducers. To improve the output capability of energy harvesters, properties of piezoelectric materials is an influential factor, but the potential of the material is less likely to be fully exploited without an optimized configuration. In this paper, an optimization strategy for PVDF-based cantilever-type energy harvesters is proposed to achieve the highest output power density with the given frequency and acceleration of the vibration source. It is shown that the maximum power output density only depends on the maximum allowable stress of the beam and the working frequency of the device, and these two factors can be obtained by adjusting the geometry of piezoelectric layers. The strategy is validated by coupled finite-element-circuit simulation and a practical device. The fabricated device within a volume of 13.1 mm 3 shows an output power of 112.8 μW which is comparable to that of the best-performing piezoceramic-based energy harvesters within the similar volume reported so far.

Bacterial cellulose-based sheet-like carbon aerogels for the in situ growth of nickel sulfide as high performance electrode materials for asymmetric supercapacitors.

PubMed

Zuo, Lizeng; Fan, Wei; Zhang, Youfang; Huang, Yunpeng; Gao, Wei; Liu, Tianxi

2017-03-30

Electroactive materials, such as nickel sulfide (NiS), with high theoretical capacities have attracted broad interest to fabricate highly efficient supercapacitors. Preventing aggregation and increasing the conductivity of NiS particles are key challenging tasks to fully achieve excellent electrochemical properties of NiS. One effective approach to solve these problems is to combine NiS with highly porous and conductive carbon materials such as carbon aerogels. In this study, a green and facile method for the in situ growth of NiS particles on bacterial cellulose (BC)-derived sheet-like carbon aerogels (CAs) has been reported. CA prepared by the dissolution-gelation-carbonization process was used as a framework to construct NiS/CA composite aerogels with NiS uniformly decorated on the pore walls of CA. It was found that the NiS/CA composite aerogel electrodes exhibit excellent capacitive performance with high specific capacitance (1606 F g -1 ), good rate capacitance retention (69% at 10 A g -1 ), and enhanced cycling stability (91.2% retention after 10 000 continuous cyclic voltammetry cycles at 100 mV s -1 ). Furthermore, asymmetric supercapacitors (ASCs) were constructed utilizing NiS/CA composite and CA as the positive and negative electrode materials, respectively. Through the synergistic effect of three-dimensional porous structures and conductive networks derived from CA and the high capacitive performance offered by NiS, the ASC device exhibited an energy density of ∼21.5 Wh kg -1 and a power density of 700 W kg -1 at the working voltage of 1.4 V in 2 M KOH aqueous solution. The ASC device also showed excellent long-term cycle stability with ∼87.1% specific capacitance retention after 10 000 cycles of cyclic voltammetry scans. Therefore, the NiS/CA composite shows great potential as a promising alternative to high-performance electrode materials for supercapacitors.

Nitrogen doped carbon derived from polyimide/multiwall carbon nanotube composites for high performance flexible all-solid-state supercapacitors

NASA Astrophysics Data System (ADS)

Kim, Dae Kyom; Kim, Nam Dong; Park, Seung-Keun; Seong, Kwang-dong; Hwang, Minsik; You, Nam-Ho; Piao, Yuanzhe

2018-03-01

Flexible all-solid-state supercapacitors are desirable as potential energy storage systems for wearable technologies. Herein, we synthesize aminophenyl multiwall carbon nanotube (AP-MWCNT) grafted polyimide precursor by in situ polymerization method as a nitrogen-doped carbon precursor. Flexible supercapacitor electrodes are fabricated via a coating of carbon precursor on carbon cloth surface and carbonization at high temperature directly. The as-obtained electrodes, which can be directly used without any binders or additives, can deliver a high specific capacitance of 333.4 F g-1 at 1 A g-1 (based on active material mass) and excellent cycle stability with 103% capacitance retention after 10,000 cycles in a three-electrode system. The flexible all-solid-state supercapacitor device exhibits a high volumetric capacitance of 3.88 F cm-3 at a current density of 0.02 mA cm-3. And also the device can deliver a maximum volumetric energy density of 0.50 mWh cm-3 and presents good cycling stability with 85.3% capacitance retention after 10,000 cycles. This device cell can not only show extraordinary mechanical flexibilities allowing folding, twisting, and rolling but also demonstrate remarkable stable electrochemical performances under their forms. This work provides a novel approach to obtain carbon textile-based flexible supercapacitors with high electrochemical performance and mechanical flexibility.

Final Report: Rational Design of Wide Band Gap Buffer Layers for High-Efficiency Thin-Film Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lordi, Vincenzo

The main objective of this project is to enable rational design of wide band gap buffer layer materials for CIGS thin-film PV by building understanding of the correlation of atomic-scale defects in the buffer layer and at the buffer/absorber interface with device electrical properties. Optimized wide band gap buffers are needed to reduce efficiency loss from parasitic absorption in the buffer. The approach uses first-principles materials simulations coupled with nanoscale analytical electron microscopy as well as device electrical characterization. Materials and devices are produced by an industrial partner in a manufacturing line to maximize relevance, with the goal of enablingmore » R&D of new buffer layer compositions or deposition processes to push device efficiencies above 21%. Cadmium sulfide (CdS) is the reference material for analysis, as the prototypical high-performing buffer material.« less

Enhanced Performance of Field-Effect Transistors Based on Black Phosphorus Channels Reduced by Galvanic Corrosion of Al Overlayers.

PubMed

Lee, Sangik; Yoon, Chansoo; Lee, Ji Hye; Kim, Yeon Soo; Lee, Mi Jung; Kim, Wondong; Baik, Jaeyoon; Jia, Quanxi; Park, Bae Ho

2018-06-06

Two-dimensional (2D)-layered semiconducting materials with considerable band gaps are emerging as a new class of materials applicable to next-generation devices. Particularly, black phosphorus (BP) is considered to be very promising for next-generation 2D electrical and optical devices because of its high carrier mobility of 200-1000 cm 2 V -1 s -1 and large on/off ratio of 10 4 to 10 5 in field-effect transistors (FETs). However, its environmental instability in air requires fabrication processes in a glovebox filled with nitrogen or argon gas followed by encapsulation, passivation, and chemical functionalization of BP. Here, we report a new method for reduction of BP-channel devices fabricated without the use of a glovebox by galvanic corrosion of an Al overlayer. The reduction of BP induced by an anodic oxidation of Al overlayer is demonstrated through surface characterization of BP using atomic force microscopy, Raman spectroscopy, and X-ray photoemission spectroscopy along with electrical measurement of a BP-channel FET. After the deposition of an Al overlayer, the FET device shows a significantly enhanced performance, including restoration of ambipolar transport, high carrier mobility of 220 cm 2 V -1 s -1 , low subthreshold swing of 0.73 V/decade, and low interface trap density of 7.8 × 10 11 cm -2 eV -1 . These improvements are attributed to both the reduction of the BP channel and the formation of an Al 2 O 3 interfacial layer resulting in a high- k screening effect. Moreover, ambipolar behavior of our BP-channel FET device combined with charge-trap behavior can be utilized for implementing reconfigurable memory and neuromorphic computing applications. Our study offers a simple device fabrication process for BP-channel FETs with high performance using galvanic oxidation of Al overlayers.

A high performance flexible all solid state supercapacitor based on the MnO2 sphere coated macro/mesoporous Ni/C electrode and ionic conducting electrolyte.

PubMed

Zhi, Jian; Reiser, Oliver; Wang, Youfu; Hu, Aiguo

2016-06-09

A high contact resistance between the active materials and the current collector, a low ionic conductivity of the gel electrolyte, and an impenetrable electrode structure are the three major barriers which greatly limit the capacitance of MnO2 in solid state supercapacitors. As a potential solution to these problems, in this work we report a novel electrode for solid state supercapacitors, based on a ternary system composed of hierarchical MnO2 spheres as the active material, macroporous Ni foam as gel penetrable skeletons and an ordered mesoporous carbon (OMC) membrane as the charge-transport accelerating layer. By employing butyl-3-methylimidazolium chloride (BMIMCl) modified gels as the ionic conducting electrolyte, the utilization efficiency of MnO2 on the specific capacitance was enhanced up to 88% of the theoretical value, delivering a volumetric capacitance of 81 F cm(-3), which is the highest value among MnO2 based solid state supercapacitors. Moreover, such a flexible device exhibits exceptional volumetric energy and power density (6.6 Wh L(-1) and 549 W L(-1), based on the whole device volume) combined with a small capacity loss of 8.5% after 6000 cycles under twisting. These encouraging findings unambiguously overcome the energy bottleneck of MnO2 in solid state supercapacitors, and open up a new application of macro/mesoporous materials in flexible devices.

Highly sensitive MoS2 photodetectors with graphene contacts

NASA Astrophysics Data System (ADS)

Han, Peize; St. Marie, Luke; Wang, Qing X.; Quirk, Nicholas; El Fatimy, Abdel; Ishigami, Masahiro; Barbara, Paola

2018-05-01

Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated remarkable performance, scalability is still a significant issue. Most devices are created using techniques that are not suitable for mass production, such as mechanical exfoliation of monolayer flakes and patterning by electron-beam lithography. Here we show that large-area MoS2 grown by chemical vapor deposition and patterned by photolithography yields highly sensitive photodetectors, with record shot-noise-limited detectivities of 8.7 × 1014 Jones in ambient condition and even higher when sealed with a protective layer. These detectivity values are higher than the highest values reported for photodetectors based on exfoliated MoS2. We study MoS2 devices with gold electrodes and graphene electrodes. The devices with graphene electrodes have a tunable band alignment and are especially attractive for scalable ultra-thin flexible optoelectronics.

Highly sensitive MoS2 photodetectors with graphene contacts.

PubMed

Han, Peize; St Marie, Luke; Wang, Qing X; Quirk, Nicholas; El Fatimy, Abdel; Ishigami, Masahiro; Barbara, Paola

2018-05-18

Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated remarkable performance, scalability is still a significant issue. Most devices are created using techniques that are not suitable for mass production, such as mechanical exfoliation of monolayer flakes and patterning by electron-beam lithography. Here we show that large-area MoS 2 grown by chemical vapor deposition and patterned by photolithography yields highly sensitive photodetectors, with record shot-noise-limited detectivities of 8.7 × 10 14 Jones in ambient condition and even higher when sealed with a protective layer. These detectivity values are higher than the highest values reported for photodetectors based on exfoliated MoS 2 . We study MoS 2 devices with gold electrodes and graphene electrodes. The devices with graphene electrodes have a tunable band alignment and are especially attractive for scalable ultra-thin flexible optoelectronics.

Flexible and High Performance Supercapacitors Based on NiCo2O4for Wide Temperature Range Applications

NASA Astrophysics Data System (ADS)

Gupta, Ram K.; Candler, John; Palchoudhury, Soubantika; Ramasamy, Karthik; Gupta, Bipin Kumar

2015-10-01

Binder free nanostructured NiCo2O4 were grown using a facile hydrothermal technique. X-ray diffraction patterns confirmed the phase purity of NiCo2O4. The surface morphology and microstructure of the NiCo2O4 analyzed by scanning electron microscopy (SEM) showed flower-like morphology composed of needle-like structures. The potential application of binder free NiCo2O4 as an electrode for supercapacitor devices was investigated using electrochemical methods. The cyclic voltammograms of NiCo2O4 electrode using alkaline aqueous electrolytes showed the presence of redox peaks suggesting pseudocapacitance behavior. Quasi-solid state supercapacitor device fabricated by sandwiching two NiCo2O4 electrodes and separating them by ion transporting layer. The performance of the device was tested using cyclic voltammetry, galvanostatic charge-discharge and electrochemical impedance spectroscopy. The device showed excellent flexibility and cyclic stability. The temperature dependent charge storage capacity was measured for their variable temperature applications. Specific capacitance of the device was enhanced by ~150% on raising the temperature from 20 to 60 °C. Hence, the results suggest that NiCo2O4 grown under these conditions could be a suitable material for high performance supercapacitor devices that can be operated at variable temperatures.

Flexible and High Performance Supercapacitors Based on NiCo2O4for Wide Temperature Range Applications.

PubMed

Gupta, Ram K; Candler, John; Palchoudhury, Soubantika; Ramasamy, Karthik; Gupta, Bipin Kumar

2015-10-20

Binder free nanostructured NiCo2O4 were grown using a facile hydrothermal technique. X-ray diffraction patterns confirmed the phase purity of NiCo2O4. The surface morphology and microstructure of the NiCo2O4 analyzed by scanning electron microscopy (SEM) showed flower-like morphology composed of needle-like structures. The potential application of binder free NiCo2O4 as an electrode for supercapacitor devices was investigated using electrochemical methods. The cyclic voltammograms of NiCo2O4 electrode using alkaline aqueous electrolytes showed the presence of redox peaks suggesting pseudocapacitance behavior. Quasi-solid state supercapacitor device fabricated by sandwiching two NiCo2O4 electrodes and separating them by ion transporting layer. The performance of the device was tested using cyclic voltammetry, galvanostatic charge-discharge and electrochemical impedance spectroscopy. The device showed excellent flexibility and cyclic stability. The temperature dependent charge storage capacity was measured for their variable temperature applications. Specific capacitance of the device was enhanced by ~150% on raising the temperature from 20 to 60 °C. Hence, the results suggest that NiCo2O4 grown under these conditions could be a suitable material for high performance supercapacitor devices that can be operated at variable temperatures.

Flexible and High Performance Supercapacitors Based on NiCo2O4for Wide Temperature Range Applications

PubMed Central

Gupta, Ram K.; Candler, John; Palchoudhury, Soubantika; Ramasamy, Karthik; Gupta, Bipin Kumar

2015-01-01

Binder free nanostructured NiCo2O4 were grown using a facile hydrothermal technique. X-ray diffraction patterns confirmed the phase purity of NiCo2O4. The surface morphology and microstructure of the NiCo2O4 analyzed by scanning electron microscopy (SEM) showed flower-like morphology composed of needle-like structures. The potential application of binder free NiCo2O4 as an electrode for supercapacitor devices was investigated using electrochemical methods. The cyclic voltammograms of NiCo2O4 electrode using alkaline aqueous electrolytes showed the presence of redox peaks suggesting pseudocapacitance behavior. Quasi-solid state supercapacitor device fabricated by sandwiching two NiCo2O4 electrodes and separating them by ion transporting layer. The performance of the device was tested using cyclic voltammetry, galvanostatic charge-discharge and electrochemical impedance spectroscopy. The device showed excellent flexibility and cyclic stability. The temperature dependent charge storage capacity was measured for their variable temperature applications. Specific capacitance of the device was enhanced by ~150% on raising the temperature from 20 to 60 °C. Hence, the results suggest that NiCo2O4 grown under these conditions could be a suitable material for high performance supercapacitor devices that can be operated at variable temperatures. PMID:26482921

Converting biomass waste into microporous carbon with simultaneously high surface area and carbon purity as advanced electrochemical energy storage materials

NASA Astrophysics Data System (ADS)

Sun, Fei; Wang, Lijie; Peng, Yiting; Gao, Jihui; Pi, Xinxin; Qu, Zhibin; Zhao, Guangbo; Qin, Yukun

2018-04-01

Developing carbon materials featuring both high accessible surface area and high structure stability are desirable to boost the performance of constructed electrochemical electrodes and devices. Herein, we report a new type of microporous carbon (MPC) derived from biomass waste based on a simple high-temperature chemical activation procedure. The optimized MPC-900 possesses microporous structure, high surface area, partially graphitic structure, and particularly low impurity content, which are critical features for enhancing carbon-based electrochemical process. The constructed MPC-900 symmetric supercapacitor exhibits high performances in commercial organic electrolyte such as widened voltage window up to 3 V and thereby high energy/power densities (50.95 Wh kg-1 at 0.44 kW kg-1; 25.3 Wh kg-1 at 21.5 kW kg-1). Furthermore, a simple melt infiltration method has been employed to enclose SnO2 nanocrystals onto the carbon matrix of MPC-900 as a high-performance lithium storage material. The obtained SnO2-MPC composite with ultrafine SnO2 nanocrystals delivers high capacities (1115 mAh g-1 at 0.2 A g-1; 402 mAh g-1 at 10 A g-1) and high-rate cycling lifespan of over 2000 cycles. This work not only develops a microporous carbon with high carbon purity and high surface area, but also provides a general platform for combining electrochemically active materials.

Optimization of material/device parameters of CdTe photovoltaic for solar cells applications

NASA Astrophysics Data System (ADS)

Wijewarnasuriya, Priyalal S.

2016-05-01

Cadmium telluride (CdTe) has been recognized as a promising photovoltaic material for thin-film solar cell applications due to its near optimum bandgap of ~1.5 eV and high absorption coefficient. The energy gap is near optimum for a single-junction solar cell. The high absorption coefficient allows films as thin as 2.5 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 20% have been produced with poly-CdTe materials. This paper examines n/p heterostructure device architecture. The performance limitations related to doping concentrations, minority carrier lifetimes, absorber layer thickness, and surface recombination velocities at the back and front interfaces is assessed. Ultimately, the paper explores device architectures of poly- CdTe and crystalline CdTe to achieve performance comparable to gallium arsenide (GaAs).

Solution-Processed Cu(In, Ga)(S, Se)2 Nanocrystal as Inorganic Hole-Transporting Material for Efficient and Stable Perovskite Solar Cells.

PubMed

Xu, Lu; Deng, Lin-Long; Cao, Jing; Wang, Xin; Chen, Wei-Yi; Jiang, Zhiyuan

2017-12-01

Perovskite solar cells are emerging as one of the most promising candidates for solar energy harvesting. To date, most of the high-performance perovskite solar cells have exclusively employed organic hole-transporting materials (HTMs) such as 2,2',7,7'-tetrakis-(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD) or polytriarylamine (PTAA) which are often expensive and have low hole mobility. Almost all these HTMs reported needed lithium salt, e.g., lithium bis(trifluoromethylsulfonyl)imide (Li-TFSI) doping, to improve hole mobility and performance. However, the use of Li-TFSI should be avoided because the hygroscopic nature of Li-TFSI could cause decomposition of perovskite and reduce device stability. Herein, we employed solution-processed CuIn 0.1 Ga 0.9 (S 0.9 Se 0.1 ) 2 (CIGSSe) nanocrystals as a novel inorganic HTM in perovskite solar cells. A power conversion efficiency of 9.15% was obtained for CIGSSe-based devices with improved stability, compared to devices using spiro-OMeTAD as HTM. This work offers a promising candidate of Cu-based inorganic HTM for efficient and stable perovskite solar cells.

A Novel Gas Sensor Transducer Based on Phthalocyanine Heterojunction Devices

PubMed Central

Muzikante, Inta; Parra, Vicente; Dobulans, Rorijs; Fonavs, Egils; Latvels, Janis; Bouvet, Marcel

2007-01-01

Experimental data concerning the changes in the current-voltage (I-V) performances of a molecular material-based heterojunction consisting of hexadecafluorinated nickel phthalocyanine (Ni(F16Pc)) and nickel phthalocyanine (NiPc), (Au|Ni(F16Pc)|NiPc|Al) are introduced as an unprecedented principle of transduction for gas sensing performances. The respective n- and p-type doped-insulator behaviors of the respective materials are supported, owing to the observed changes in surface potential (using the Kelvin probe method) after submission to electron donor (ammonia) and electron acceptor gases (ozone). On the other hand, the bilayer device exhibits strong variations in the built-in potential of the junction and in its rectification ratio. Moreover, large increases occur in forward and reverse currents in presence of ammonia vapors. These make possible a multimodal principle of detection controlled by a combined effect between the heterojunction and the NiPc|Al contact. Indeed, this metal/organic junction plays a critical role regarding the steady asymmetry of the I-V profiles during the device's doping even using high ammonia concentrations. This approach offers a more sophisticated alternative to the classically studied, but at times rather operation-limited, resistive gas sensors. PMID:28903274

Fiber-integrated refractive index sensor based on a diced Fabry-Perot micro-resonator.

PubMed

Suntsov, Sergiy; Rüter, Christian E; Schipkowski, Tom; Kip, Detlef

2017-11-20

We report on a fiber-integrated refractive index sensor based on a Fabry-Perot micro-resonator fabricated using simple diamond blade dicing of a single-mode step-index fiber. The performance of the device has been tested for the refractive index measurements of sucrose solutions as well as in air. The device shows a sensitivity of 1160 nm/RIU (refractive index unit) at a wavelength of 1.55 μm and a temperature cross-sensitivity of less than 10 -7   RIU/°C. Based on evaluation of the broadband reflection spectra, refractive index steps of 10 -5 of the solutions were accurately measured. The conducted coating of the resonator sidewalls with layers of a high-index material with real-time reflection spectrum monitoring could help to significantly improve the sensor performance.

Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors

PubMed Central

Hudait, Mantu K.; Clavel, Michael; Goley, Patrick; Jain, Nikhil; Zhu, Yan

2014-01-01

Germanium-based materials and device architectures have recently appeared as exciting material systems for future low-power nanoscale transistors and photonic devices. Heterogeneous integration of germanium (Ge)-based materials on silicon (Si) using large bandgap buffer architectures could enable the monolithic integration of electronics and photonics. In this paper, we report on the heterogeneous integration of device-quality epitaxial Ge on Si using composite AlAs/GaAs large bandgap buffer, grown by molecular beam epitaxy that is suitable for fabricating low-power fin field-effect transistors required for continuing transistor miniaturization. The superior structural quality of the integrated Ge on Si using AlAs/GaAs was demonstrated using high-resolution x-ray diffraction analysis. High-resolution transmission electron microscopy confirmed relaxed Ge with high crystalline quality and a sharp Ge/AlAs heterointerface. X-ray photoelectron spectroscopy demonstrated a large valence band offset at the Ge/AlAs interface, as compared to Ge/GaAs heterostructure, which is a prerequisite for superior carrier confinement. The temperature-dependent electrical transport properties of the n-type Ge layer demonstrated a Hall mobility of 370 cm2/Vs at 290 K and 457 cm2/Vs at 90 K, which suggests epitaxial Ge grown on Si using an AlAs/GaAs buffer architecture would be a promising candidate for next-generation high-performance and energy-efficient fin field-effect transistor applications. PMID:25376723

Enhancement of Performance and Mechanism Studies of All-Solution Processed Small-Molecule based Solar Cells with an Inverted Structure.

PubMed

Long, Guankui; Wu, Bo; Yang, Xuan; Kan, Bin; Zhou, Ye-Cheng; Chen, Li-Chuan; Wan, Xiangjian; Zhang, Hao-Li; Sum, Tze Chien; Chen, Yongsheng

2015-09-30

Both solution-processed polymers and small molecule based solar cells have achieved PCEs over 9% with the conventional device structure. However, for the practical applications of photovoltaic technology, further enhancement of both device performance and stability are urgently required, particularly for the inverted structure devices, since this architecture will probably be most promising for the possible coming commercialization. In this work, we have fabricated both conventional and inverted structure devices using the same small molecular donor/acceptor materials and compared the performance of both device structures, and found that the inverted structure based device gave significantly improved performance, the highest PCE so far for inverted structure based device using small molecules as the donor. Furthermore, the inverted device shows a remarkable stability with almost no obvious degradation after three months. Systematic device physics and charge generation dynamics studies, including optical simulation, light-intensity-dependent current-voltage experiments, photocurrent density-effective voltage analyses, transient absorption measurements, and electrical simulations, indicate that the significantly enhanced performance using inverted device is ascribed to the increasing of Jsc compared to the conventional device, which in turn is mainly attributed to the increased absorption of photons in the active layers, rather than the reduced nongeminate recombination.

High-performance silicon photonics technology for telecommunications applications.

PubMed

Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

2014-04-01

By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

High-performance silicon photonics technology for telecommunications applications

PubMed Central

Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

2014-01-01

By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge–based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge–based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications. PMID:27877659

High-performance silicon photonics technology for telecommunications applications

NASA Astrophysics Data System (ADS)

Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

2014-04-01

By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

Paper-based transparent flexible thin film supercapacitors

NASA Astrophysics Data System (ADS)

Gao, Kezheng; Shao, Ziqiang; Wu, Xue; Wang, Xi; Zhang, Yunhua; Wang, Wenjun; Wang, Feijun

2013-05-01

Paper-based transparent flexible thin film supercapacitors were fabricated using CNF-[RGO]n hybrid paper as an electrode material and charge collector. Owing to the self-anti-stacking of distorted RGO nanosheets and internal electrolyte nanoscale-reservoirs, the device exhibited good electrochemical performance (about 1.73 mF cm-2), and a transmittance of about 56% (at 550 nm).Paper-based transparent flexible thin film supercapacitors were fabricated using CNF-[RGO]n hybrid paper as an electrode material and charge collector. Owing to the self-anti-stacking of distorted RGO nanosheets and internal electrolyte nanoscale-reservoirs, the device exhibited good electrochemical performance (about 1.73 mF cm-2), and a transmittance of about 56% (at 550 nm). Electronic supplementary information (ESI) available: Experimental, TEM image, IR spectra, and XRD spectra of cellulose nanofibers, TEM image, and XRD spectra of RGO, graphite, GO nanosheets, CNF paper, and CNF-[RGO]20 hybrid paper, high-resolution C1s spectra of GO, Raman spectra of GO nanosheets, cross-sectional FESEM image of CNF-[RGO]20 hybrid paper and stress-strain curve of T-SC-20. See DOI: 10.1039/c3nr00674c

Stability of the tungsten diselenide and silicon carbide heterostructure against high energy proton exposure

NASA Astrophysics Data System (ADS)

Walker, Roger C.; Shi, Tan; Jariwala, Bhakti; Jovanovic, Igor; Robinson, Joshua A.

2017-10-01

Single layers of tungsten diselenide (WSe2) can be used to construct ultra-thin, high-performance electronics. Additionally, there has been considerable progress in controlled and direct growth of single layers on various substrates. Based on these results, high-quality WSe2-based devices that approach the limit of physical thickness are now possible. Such devices could be useful for space applications, but understanding how high-energy radiation impacts the properties of WSe2 and the WSe2/substrate interface has been lacking. In this work, we compare the stability against high energy proton radiation of WSe2 and silicon carbide (SiC) heterostructures generated by mechanical exfoliation of WSe2 flakes and by direct growth of WSe2 via metal-organic chemical vapor deposition (MOCVD). These two techniques produce WSe2/SiC heterostructures with distinct differences due to interface states generated during the MOCVD growth process. This difference carries over to differences in band alignment from interface states and the ultra-thin nature of the MOCVD-grown material. Both heterostructures are not susceptible to proton-induced charging up to a dose of 1016 protons/cm2, as measured via shifts in the binding energy of core shell electrons and a decrease in the valence band offset. Furthermore, the MOCVD-grown material is less affected by the proton exposure due to its ultra-thin nature and a greater interaction with the substrate. These combined effects show that the directly grown material is suitable for multi-year use in space, provided that high quality devices can be fabricated from it.

On the Properties and Design of Organic Light-Emitting Devices

NASA Astrophysics Data System (ADS)

Erickson, Nicholas C.

Organic light-emitting devices (OLEDs) are attractive for use in next-generation display and lighting technologies. In display applications, OLEDs offer a wide emission color gamut, compatibility with flexible substrates, and high power efficiencies. In lighting applications, OLEDs offer attractive features such as broadband emission, high-performance, and potential compatibility with low-cost manufacturing methods. Despite recent demonstrations of near unity internal quantum efficiencies (photons out per electron in), OLED adoption lags conventional technologies, particularly in large-area displays and general lighting applications. This thesis seeks to understand the optical and electronic properties of OLED materials and device architectures which lead to not only high peak efficiency, but also reduced device complexity, high efficiency under high excitation, and optimal white-light emission. This is accomplished through the careful manipulation of organic thin film compositions fabricated via vacuum thermal evaporation, and the introduction of a novel device architecture, the graded-emissive layer (G-EML). This device architecture offers a unique platform to study the electronic properties of varying compositions of organic semiconductors and the resulting device performance. This thesis also introduces an experimental technique to measure the spatial overlap of electrons and holes within an OLED's emissive layer. This overlap is an important parameter which is affected by the choice of materials and device design, and greatly impacts the operation of the OLED at high excitation densities. Using the G-EML device architecture, OLEDs with improved efficiency characteristics are demonstrated, achieving simultaneously high brightness and high efficiency.

High-performance planar green light-emitting diodes based on a PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structure

NASA Astrophysics Data System (ADS)

Shi, Zhi-Feng; Sun, Xu-Guang; Wu, Di; Xu, Ting-Ting; Zhuang, Shi-Wei; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

2016-05-01

Recently, perovskite-based light-emitting diodes based on organometal halide emitters have attracted much attention because of their excellent properties of high color purity, tunable emission wavelength and a low-temperature processing technique. As is well-known, organic light-emitting diodes have shown powerful capabilities in this field; however, the fabrication of these devices typically relies on high-temperature and high-vacuum processes, which increases the final cost of the product and renders them uneconomical for use in large-area displays. Organic/inorganic hybrid halide perovskites match with these material requirements, as it is possible to prepare such materials with high crystallinity through solution processing at low temperature. Herein, we demonstrated a high-brightness green light-emitting diode based on PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structures by a spin-coating method combined with a sputtering system. Under forward bias, a dominant emission peak at ~530 nm with a low full width of half-maximum (FWHM) of 30 nm can be achieved at room temperature. Owing to the high surface coverage of the CH3NH3PbBr3 layer and a device design based on carrier injection and a confinement configuration, the proposed diode exhibits good electroluminescence performance, with an external quantum efficiency of 0.0645%. More importantly, we investigated the working stability of the studied diode under continuous operation to verify the sensitivity of the electroluminescence performance to ambient atmosphere and to assess the suitability of the diode for practical applications. Moreover, the underlying reasons for the undesirable emission decay are tentatively discussed. This demonstration of an effective green electroluminescence based on CH3NH3PbBr3 provides valuable information for the design and development of perovskites as efficient emitters, thus facilitating their use in existing applications and suggesting new potential applications.

Optically-programmable nonlinear photonic component for dielectric-loaded plasmonic circuitry.

PubMed

Krasavin, Alexey V; Randhawa, Sukanya; Bouillard, Jean-Sebastien; Renger, Jan; Quidant, Romain; Zayats, Anatoly V

2011-12-05

We demonstrate both experimentally and numerically a compact and efficient, optically tuneable plasmonic component utilizing a surface plasmon polariton ring resonator with nonlinearity based on trans-cis isomerization in a polymer material. We observe more than 3-fold change between high and low transmission states of the device at milliwatt control powers (∼100 W/cm² by intensity), with the performance limited by switching speed of the material. Such plasmonic components can be employed in optically programmable and reconfigurable integrated photonic circuitry.

Review of GaN-based devices for terahertz operation

NASA Astrophysics Data System (ADS)

Ahi, Kiarash

2017-09-01

GaN provides the highest electron saturation velocity, breakdown voltage, operation temperature, and thus the highest combined frequency-power performance among commonly used semiconductors. The industrial need for compact, economical, high-resolution, and high-power terahertz (THz) imaging and spectroscopy systems are promoting the utilization of GaN for implementing the next generation of THz systems. As it is reviewed, the mentioned characteristics of GaN together with its capabilities of providing high two-dimensional election densities and large longitudinal optical phonon of ˜90 meV make it one of the most promising semiconductor materials for the future of the THz emitters, detectors, mixers, and frequency multiplicators. GaN-based devices have shown capabilities of operation in the upper THz frequency band of 5 to 12 THz with relatively high photon densities in room temperature. As a result, THz imaging and spectroscopy systems with high resolution and deep depth of penetration can be realized through utilizing GaN-based devices. A comprehensive review of the history and the state of the art of GaN-based electronic devices, including plasma heterostructure field-effect transistors, negative differential resistances, hetero-dimensional Schottky diodes, impact avalanche transit times, quantum-cascade lasers, high electron mobility transistors, Gunn diodes, and tera field-effect transistors together with their impact on the future of THz imaging and spectroscopy systems is provided.

Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids

DOE PAGES

Zhou, Ye; Han, Su -Ting; Sonar, Prashant; ...

2015-03-24

The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. Wemore » conclude that this hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits.« less

Vapor phase polymerization deposition of conducting polymer/graphene nanocomposites as high performance electrode materials.

PubMed

Yang, Yajie; Li, Shibin; Zhang, Luning; Xu, Jianhua; Yang, Wenyao; Jiang, Yadong

2013-05-22

In this paper, we report chemical vapor phase polymerization (VPP) deposition of novel poly(3,4-ethylenedioxythiophene) (PEDOT)/graphene nanocomposites as solid tantalum electrolyte capacitor cathode films. The PEDOT/graphene films were successfully prepared on porous tantalum pentoxide surface as cathode films through the VPP procedure. The results indicated that the high conductivity nature of PEDOT/graphene leads to the decrease of cathode films resistance and contact resistance between PEDOT/graphene and carbon paste. This nanocomposite cathode film based capacitor showed ultralow equivalent series resistance (ESR) ca. 12 mΩ and exhibited better capacitance-frequency performance than the PEDOT based capacitor. The leakage current investigation revealed that the device encapsulation process does not influence capacitor leakage current, indicating the excellent mechanical strength of PEDOT-graphene films. The graphene showed a distinct protection effect on the dielectric layer from possible mechanical damage. This high conductivity and mechanical strength graphene based conducting polymer nanocomposites indicated a promising application future for organic electrode materials.

Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Xiang-Wei, E-mail: xwjiang@semi.ac.cn; Li, Shu-Shen; Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026

2014-05-12

Performance limits of tunnel field-effect transistors based on mono-layer transition metal dichalcogenides are investigated through numerical quantum mechanical simulations. The atomic mono-layer nature of the devices results in a much smaller natural length λ, leading to much larger electric field inside the tunneling diodes. As a result, the inter-band tunneling currents are found to be very high as long as ultra-thin high-k gate dielectric is possible. The highest on-state driving current is found to be close to 600 μA/μm at V{sub g} = V{sub d} = 0.5 V when 2 nm thin HfO{sub 2} layer is used for gate dielectric, outperforming most of the conventional semiconductor tunnelmore » transistors. In the five simulated transition-metal dichalcogenides, mono-layer WSe{sub 2} based tunnel field-effect transistor shows the best potential. Deep analysis reveals that there is plenty room to further enhance the device performance by either geometry, alloy, or strain engineering on these mono-layer materials.« less

Functional Carbon Nanocomposite, Optoelectronic, and Catalytic Coatings

NASA Astrophysics Data System (ADS)

Liang, Yu Teng

Over the past couple decades, fundamental research into carbon nanomaterials has produced a steady stream of groundbreaking physical science. Their record setting mechanical strength, chemical stability, and optoelectronic performance have fueled many optimistic claims regarding the breadth and pace of carbon nanotube and graphene integration. However, present synthetic, processing, and economic constraints have precluded these materials from many practical device applications. To overcome these limitations, novel synthetic techniques, processing methodologies, device geometries, and mechanistic insight were developed in this dissertation. The resulting advancements in material production and composite device performance have brought carbon nanomaterials ever closer to commercial implementation. For improved materials processing, vacuum co-deposition was first demonstrated as viable technique for forming carbon nanocomposite films without property distorting covalent modifications. Co-deposited nanoparticle, carbon nanotube, and graphene composite films enabled rapid device prototyping and compositional optimization. Cellulosic polymer stabilizers were then shown to be highly effective carbon nanomaterial dispersants, improving graphene production yields by two orders of magnitude in common organic solvents. By exploiting polarity interactions, iterative solvent exchange was used to further increase carbon nanomaterial dispersion concentrations by an additional order of magnitude, yielding concentrated inks. On top of their low causticity, these cellulosic nanomaterial inks have highly tunable viscosities, excellent film forming capacity, and outstanding thermal stability. These processing characteristics enable the efficient scaling of carbon nanomaterial coatings and device production using existing roll-to-roll fabrication techniques. Utilizing these process improvements, high-performance gas sensing, energy storage, transparent conductor, and photocatalytic coatings have been demonstrated. In particular, co-deposited platinum, silicon, and carbon nanomaterial films were fashioned into electronic hydrogen gas sensors, cost efficient dye sensitized solar cell electrodes, and high capacity lithium ion battery anodes. Furthermore, concentrated graphene inks were coated to form aligned graphene-polymer nanocomposites and outstanding carbon nanotube-graphene hybrid semitransparent electrical conductors. Nanocomposite graphene-titanium dioxide catalysts produced from these cellulosic inks have low covalent defect densities and were shown to be approximately two and seven times more active than those based on reduced graphene oxide in photo-oxidation and photo-reduction reactions, respectively. Using a broad range of material characterization techniques, mechanistic insight was obtained using composite photocatalysts fabricated from well defined nanomaterials. For instance, optical spectroscopy and electronic measurements revealed a direct correlation between graphene charge transport performance and composite photochemical activity. Moreover, investigations into multidimensional composites based on 1D carbon nanotubes, 2D graphene, and 2D titanium dioxide nanosheets generated additional mechanistic insight for extending photocatalytic spectral response and increasing reaction specificity. Together, these results demonstrate the versatility of vacuum co-deposition and cellulosic nanomaterial inks for fabricating carbon nanocomposite optoelectronic and energy conversion coatings.

Development of n-type cobaltocene-encapsulated carbon nanotubes with remarkable thermoelectric property

PubMed Central

Fukumaru, Takahiro; Fujigaya, Tsuyohiko; Nakashima, Naotoshi

2015-01-01

Direct conversion from heat to electricity is one of the important technologies for a sustainable society since large quantities of energy are wasted as heat. We report the development of a single-walled carbon nanotube (SWNT)-based high conversion efficiency, air-stable and flexible thermoelectric material. We prepared cobaltocene-encapsulated SWNTs (denoted CoCp2@SWNTs) and revealed that the material showed a negative-type (n-type) semiconducting behaviour (Seebeck coefficient: −41.8 μV K−1 at 320 K). The CoCp2@SWNT film was found to show a high electrical conductivity (43,200 S m−1 at 320 K) and large power factor (75.4 μW m−1 K−2) and the performance was remarkably stable under atmospheric conditions over a wide range of temperatures. The thermoelectric figure of merit (ZT) value of the CoCp2@SWNT film (0.157 at 320 K) was highest among the reported n-type organic thermoelectric materials due to the large power factor and low thermal conductivity (0.15 W m−1 K−1). These characteristics of the n-type CoCp2@SWNTs allowed us to fabricate a p-n type thermoelectric device by combination with an empty SWNT-based p-type film. The fabricated device exhibited a highly efficient power generation close to the calculated values even without any air-protective coating due to the high stability of the SWNT-based materials under atmospheric conditions. PMID:25608478

Materials for microfluidic chip fabrication.

PubMed

Ren, Kangning; Zhou, Jianhua; Wu, Hongkai

2013-11-19

Through manipulating fluids using microfabricated channel and chamber structures, microfluidics is a powerful tool to realize high sensitive, high speed, high throughput, and low cost analysis. In addition, the method can establish a well-controlled microenivroment for manipulating fluids and particles. It also has rapid growing implementations in both sophisticated chemical/biological analysis and low-cost point-of-care assays. Some unique phenomena emerge at the micrometer scale. For example, reactions are completed in a shorter amount of time as the travel distances of mass and heat are relatively small; the flows are usually laminar; and the capillary effect becomes dominant owing to large surface-to-volume ratios. In the meantime, the surface properties of the device material are greatly amplified, which can lead to either unique functions or problems that we would not encounter at the macroscale. Also, each material inherently corresponds with specific microfabrication strategies and certain native properties of the device. Therefore, the material for making the device plays a dominating role in microfluidic technologies. In this Account, we address the evolution of materials used for fabricating microfluidic chips, and discuss the application-oriented pros and cons of different materials. This Account generally follows the order of the materials introduced to microfluidics. Glass and silicon, the first generation microfluidic device materials, are perfect for capillary electrophoresis and solvent-involved applications but expensive for microfabriaction. Elastomers enable low-cost rapid prototyping and high density integration of valves on chip, allowing complicated and parallel fluid manipulation and in-channel cell culture. Plastics, as competitive alternatives to elastomers, are also rapid and inexpensive to microfabricate. Their broad variety provides flexible choices for different needs. For example, some thermosets support in-situ fabrication of arbitrary 3D structures, while some perfluoropolymers are extremely inert and antifouling. Chemists can use hydrogels as highly permeable structural material, which allows diffusion of molecules without bulk fluid flows. They are used to support 3D cell culture, to form diffusion gradient, and to serve as actuators. Researchers have recently introduced paper-based devices, which are extremely low-cost to prepare and easy to use, thereby promising in commercial point-of-care assays. In general, the evolution of chip materials reflects the two major trends of microfluidic technology: powerful microscale research platforms and low-cost portable analyses. For laboratory research, chemists choosing materials generally need to compromise the ease in prototyping and the performance of the device. However, in commercialization, the major concerns are the cost of production and the ease and reliability in use. There may be new growth in the combination of surface engineering, functional materials, and microfluidics, which is possibly accomplished by the utilization of composite materials or hybrids for advanced device functions. Also, significant expanding of commercial applications can be predicted.

Gallium nitride vertical power devices on foreign substrates: a review and outlook

NASA Astrophysics Data System (ADS)

Zhang, Yuhao; Dadgar, Armin; Palacios, Tomás

2018-07-01

Vertical gallium nitride (GaN) power devices have attracted increased attention due to their superior high-voltage and high-current capacity as well as easier thermal management than lateral GaN high electron mobility transistors. Vertical GaN devices are promising candidates for next-generation power electronics in electric vehicles, data centers, smart grids and renewable energy process. The use of low-cost foreign substrates such as silicon (Si) substrates, instead of the expensive free-standing GaN substrates, could greatly trim material cost and enable large-diameter wafer processing while maintaining high device performance. This review illustrates recent progress in material epitaxy, device design, device physics and processing technologies for the development of vertical GaN power devices on low-cost foreign substrates. Although the device technologies are still at the early stage of development, state-of-the-art vertical GaN-on-Si power diodes have already shown superior Baliga’s figure of merit than commercial SiC and Si power devices at the voltage classes beyond 600 V. Furthermore, we unveil the design space of vertical GaN power devices on native and different foreign substrates, from the analysis of the impact of dislocation and defects on device performance. We conclude by identifying the application space, current challenges and exciting research opportunities in this very dynamic research field.

Liquid crystal materials and tunable devices for optical communications

NASA Astrophysics Data System (ADS)

Du, Fang

In this dissertation, liquid crystal materials and devices are investigated in meeting the challenges for photonics and communications applications. The first part deals with polymer-stabilized liquid crystal (PSLC) materials and devices. Three polymer-stabilized liquid crystal systems are developed for optical communications. The second part reports the experimental investigation of a novel liquid-crystal-infiltrated photonic crystal fiber (PCF) and explores its applications in fiber-optic communications. The curing temperature is found to have significant effects on the PSLC performance. The electro-optic properties of nematic polymer network liquid crystal (PNLC) at different curing temperatures are investigated experimentally. At high curing temperature, a high contrast, low drive voltage, and small hysteresis PNLC is obtained as a result of the formed large LC microdomains. With the help of curing temperature effect, it is able to develop PNLC based optical devices with highly desirable performances for optical communications. Such high performance is generally considered difficult to realize for a PNLC. In fact, the poor performance of PNLC, especially at long wavelengths, has hindered it from practical applications for optical communications for a long time. Therefore, the optimal curing temperature effect discovered in this thesis would enable PSLCs for practical industrial applications. Further more, high birefringence LCs play an important role for near infrared photonic devices. The isothiocyanato tolane liquid crystals exhibit a high birefringence and low viscosity. The high birefringence LC dramatically improves the PSLC contrast ratio while keeping a low drive voltage and fast response time. A free-space optical device by PNLC is experimentally demonstrated and its properties characterized. Most LC devices are polarization sensitive. To overcome this drawback, we have investigated the polymer-stabilized cholesteric LC (PSCLC). Combining the curing temperature effect and high birefringence LC, a polarization independent fiber-optical device is realized with over 30 dB attenuation, ˜12 V rms drive voltage and 11/28 milliseconds (rise/decay) response times. A polymer-stabilized twisted nematic LC (PS TNLC) is also proposed as a variable optical attenuator for optical communications. By using the polarization control system, the device is polarization independent. The polymer network in a PS TNLC not only results in a fast response time (0.9/9 milliseconds for rise/decay respectively), but also removes the backflow effect of TNLC which occurs in the high voltage regime. Another major achievement in this thesis is the first demonstration of an electrically tunable LC-infiltrated photonic crystal fiber (PCF). Two different LC PCF configurations are studied. For the first time, electrically tunable LC PCFs are demonstrated experimentally. The guiding mechanism and polarization properties are studied. Preliminary experimental results are also given for the thermo-optical properties of a LC filled air-core PCF. In conclusion, this dissertation has solved important issues related to PSLC and enables its applications as VOAs and light shutters in optical communications. Through experimental investigations of the LC filled PCFs, a new possibility of developing tunable micro-sized fiber devices is opened for optical communications as well.

Giant photostriction in organic–inorganic lead halide perovskites

PubMed Central

Zhou, Yang; You, Lu; Wang, Shiwei; Ku, Zhiliang; Fan, Hongjin; Schmidt, Daniel; Rusydi, Andrivo; Chang, Lei; Wang, Le; Ren, Peng; Chen, Liufang; Yuan, Guoliang; Chen, Lang; Wang, Junling

2016-01-01

Among the many materials investigated for next-generation photovoltaic cells, organic–inorganic lead halide perovskites have demonstrated great potential thanks to their high power conversion efficiency and solution processability. Within a short period of about 5 years, the efficiency of solar cells based on these materials has increased dramatically from 3.8 to over 20%. Despite the tremendous progress in device performance, much less is known about the underlying photophysics involving charge–orbital–lattice interactions and the role of the organic molecules in this hybrid material remains poorly understood. Here, we report a giant photostrictive response, that is, light-induced lattice change, of >1,200 p.p.m. in methylammonium lead iodide, which could be the key to understand its superior optical properties. The strong photon-lattice coupling also opens up the possibility of employing these materials in wireless opto-mechanical devices. PMID:27044485

An overview of carbon materials for flexible electrochemical capacitors.

PubMed

He, Yongmin; Chen, Wanjun; Gao, Caitian; Zhou, Jinyuan; Li, Xiaodong; Xie, Erqing

2013-10-07

Under the background of the quick development of lightweight, flexible, and wearable electronic devices in our society, a flexible and highly efficient energy management strategy is needed for their counterpart energy-storage systems. Among them, flexible electrochemical capacitors (ECs) have been considered as one of the most promising candidates because of their significant advantages in power and energy densities, and unique properties of being flexible, lightweight, low-cost, and environmentally friendly compared with current energy storage devices. In a common EC, carbon materials play an irreplaceable and principal role in its energy-storage performance. Up till now, most progress towards flexible ECs technologies has mostly benefited from the continuous development of carbon materials. As a result, in view of the dual remarkable highlights of ECs and carbon materials, a summary of recent research progress on carbon-based flexible EC electrode materials is presented in this review, including carbon fiber (CF, consisting of carbon microfiber-CMF and carbon nanofiber-CNF) networks, carbon nanotube (CNT) and graphene coatings, CNT and/or graphene papers (or films), and freestanding three-dimensional (3D) flexible carbon-based macroscopic architectures. Furthermore, some promising carbon materials for great potential applications in flexible ECs are introduced. Finally, the trends and challenges in the development of carbon-based electrode materials for flexible ECs and their smart applications are analyzed.

High Performance Photodiode Based on p-Si/Copper Phthalocyanine Heterojunction.

PubMed

Zhong, Junkang; Peng, Yingquan; Zheng, Tingcai; Lv, Wenli; Ren, Qiang; Fobao, Huang; Ying, Wang; Chen, Zhen; Tang, Ying

2016-06-01

Hybrid organic-inorganic (HOI) photodiodes have both advantages of organic and inorganic materials, including compatibility of traditional Si-based semiconductor technology, low cost, high photosensitivity and high reliability, showing tremendous value in application. Red light sensitive HOI photodiodes based on the p-Si/copper phthalocyanine (CuPc) hetrojunction were fabricated and characterized. The effects of CuPc layer thickness on the performance were investigated, and an optimal layer thickness of around 30 nm was determined. An analytical expression is derived to describe the measured thickness dependence of the saturation photocurrent. For the device with optimal CuPc layer thickness, a photoresponsivity of 0.35 A/W and external quantum efficiency of 70% were obtained at 9 V reverse voltage bias and 655 nm light illumination of 0.451 mW. Furthermore, optical power dependent performances were investigated.

SMA foil-based elastocaloric cooling: from material behavior to device engineering

NASA Astrophysics Data System (ADS)

Bruederlin, F.; Ossmer, H.; Wendler, F.; Miyazaki, S.; Kohl, M.

2017-10-01

The elastocaloric effect associated with the stress-induced first order phase transformation in pseudoelastic shape memory alloy (SMA) films and foils is of special interest for cooling applications on a miniature scale enabling fast heat transfer and high cycling frequencies as well as tunable transformation temperatures. The focus is on TiNi-based materials having the potential to meet the various challenges associated with elastocaloric cooling including large adiabatic temperature change and ultra-low fatigue. The evolution of strain and temperature bands during tensile load cycling is investigated with respect to strain and strain-rate by in situ digital image correlation and infrared thermography with a spatial resolution in the order of 25 µm. Major design issues and challenges in fabrication of SMA film-based elastocaloric cooling devices are discussed including the efficiency of heat transfer as well as force recovery to enhance the coefficient of performance (COP) on the system level. Advanced demonstrators show a temperature span of 13 °C after 30 s, while the COP of the overall device reaches almost 10% of Carnot efficiency.

Enhanced confinement in electron cyclotron resonance ion source plasma.

PubMed

Schachter, L; Stiebing, K E; Dobrescu, S

2010-02-01

Power loss by plasma-wall interactions may become a limitation for the performance of ECR and fusion plasma devices. Based on our research to optimize the performance of electron cyclotron resonance ion source (ECRIS) devices by the use of metal-dielectric (MD) structures, the development of the method presented here, allows to significantly improve the confinement of plasma electrons and hence to reduce losses. Dedicated measurements were performed at the Frankfurt 14 GHz ECRIS using argon and helium as working gas and high temperature resistive material for the MD structures. The analyzed charge state distributions and bremsstrahlung radiation spectra (corrected for background) also clearly verify the anticipated increase in the plasma-electron density and hence demonstrate the advantage by the MD-method.

Deformable devices with integrated functional nanomaterials for wearable electronics.

PubMed

Kim, Jaemin; Lee, Jongsu; Son, Donghee; Choi, Moon Kee; Kim, Dae-Hyeong

2016-01-01

As the market and related industry for wearable electronics dramatically expands, there are continuous and strong demands for flexible and stretchable devices to be seamlessly integrated with soft and curvilinear human skin or clothes. However, the mechanical mismatch between the rigid conventional electronics and the soft human body causes many problems. Therefore, various prospective nanomaterials that possess a much lower flexural rigidity than their bulk counterparts have rapidly established themselves as promising electronic materials replacing rigid silicon and/or compound semiconductors in next-generation wearable devices. Many hybrid structures of multiple nanomaterials have been also developed to pursue both high performance and multifunctionality. Here, we provide an overview of state-of-the-art wearable devices based on one- or two-dimensional nanomaterials (e.g., carbon nanotubes, graphene, single-crystal silicon and oxide nanomembranes, organic nanomaterials and their hybrids) in combination with zero-dimensional functional nanomaterials (e.g., metal/oxide nanoparticles and quantum dots). Starting from an introduction of materials strategies, we describe device designs and the roles of individual ones in integrated systems. Detailed application examples of wearable sensors/actuators, memories, energy devices, and displays are also presented.

Deformable devices with integrated functional nanomaterials for wearable electronics

NASA Astrophysics Data System (ADS)

Kim, Jaemin; Lee, Jongsu; Son, Donghee; Choi, Moon Kee; Kim, Dae-Hyeong

2016-03-01

As the market and related industry for wearable electronics dramatically expands, there are continuous and strong demands for flexible and stretchable devices to be seamlessly integrated with soft and curvilinear human skin or clothes. However, the mechanical mismatch between the rigid conventional electronics and the soft human body causes many problems. Therefore, various prospective nanomaterials that possess a much lower flexural rigidity than their bulk counterparts have rapidly established themselves as promising electronic materials replacing rigid silicon and/or compound semiconductors in next-generation wearable devices. Many hybrid structures of multiple nanomaterials have been also developed to pursue both high performance and multifunctionality. Here, we provide an overview of state-of-the-art wearable devices based on one- or two-dimensional nanomaterials (e.g., carbon nanotubes, graphene, single-crystal silicon and oxide nanomembranes, organic nanomaterials and their hybrids) in combination with zero-dimensional functional nanomaterials (e.g., metal/oxide nanoparticles and quantum dots). Starting from an introduction of materials strategies, we describe device designs and the roles of individual ones in integrated systems. Detailed application examples of wearable sensors/actuators, memories, energy devices, and displays are also presented.

High thermal conductivity liquid metal pad for heat dissipation in electronic devices

NASA Astrophysics Data System (ADS)

Lin, Zuoye; Liu, Huiqiang; Li, Qiuguo; Liu, Han; Chu, Sheng; Yang, Yuhua; Chu, Guang

2018-05-01

Novel thermal interface materials using Ag-doped Ga-based liquid metal were proposed for heat dissipation of electronic packaging and precision equipment. On one hand, the viscosity and fluidity of liquid metal was controlled to prevent leakage; on the other hand, the thermal conductivity of the Ga-based liquid metal was increased up to 46 W/mK by incorporating Ag nanoparticles. A series of experiments were performed to evaluate the heat dissipation performance on a CPU of smart-phone. The results demonstrated that the Ag-doped Ga-based liquid metal pad can effectively decrease the CPU temperature and change the heat flow path inside the smart-phone. To understand the heat flow path from CPU to screen through the interface material, heat dissipation mechanism was simulated and discussed.

Bismuth oxide nanotubes-graphene fiber-based flexible supercapacitors.

PubMed

Gopalsamy, Karthikeyan; Xu, Zhen; Zheng, Bingna; Huang, Tieqi; Kou, Liang; Zhao, Xiaoli; Gao, Chao

2014-08-07

Graphene-bismuth oxide nanotube fiber as electrode material for constituting flexible supercapacitors using a PVA/H3PO4 gel electrolyte is reported with a high specific capacitance (Ca) of 69.3 mF cm(-2) (for a single electrode) and 17.3 mF cm(-2) (for the whole device) at 0.1 mA cm(-2), respectively. Our approach opens the door to metal oxide-graphene hybrid fibers and high-performance flexible electronics.

Optimization of a high-pressure pore water extraction device.

PubMed

Cyr, Martin; Daidié, Alain

2007-02-01

High-pressure squeezing is a technique used for the extraction of the pore water of porous materials such as sediments, soils, rocks, and concrete. The efficiency of extraction depends on the maximum pressures on the materials. This article presents the design of a high-pressure device reaching an axial pressure of 1000 MPa which has been developed to improve the efficiency of extraction. The increase in squeezing pressure implies high stresses inside the chamber, so specialized expertise was required to design a safe, functional device that could withstand pressures significantly higher than common laboratory equipment. The design includes finite element calculations, selection of appropriate materials, and descriptive construction details for the apparatus. It also includes an experimental study of the performance of the apparatus in terms of extraction efficiency.

Photosensitive graphene transistors.

PubMed

Li, Jinhua; Niu, Liyong; Zheng, Zijian; Yan, Feng

2014-08-20

High performance photodetectors play important roles in the development of innovative technologies in many fields, including medicine, display and imaging, military, optical communication, environment monitoring, security check, scientific research and industrial processing control. Graphene, the most fascinating two-dimensional material, has demonstrated promising applications in various types of photodetectors from terahertz to ultraviolet, due to its ultrahigh carrier mobility and light absorption in broad wavelength range. Graphene field effect transistors are recognized as a type of excellent transducers for photodetection thanks to the inherent amplification function of the transistors, the feasibility of miniaturization and the unique properties of graphene. In this review, we will introduce the applications of graphene transistors as photodetectors in different wavelength ranges including terahertz, infrared, visible, and ultraviolet, focusing on the device design, physics and photosensitive performance. Since the device properties are closely related to the quality of graphene, the devices based on graphene prepared with different methods will be addressed separately with a view to demonstrating more clearly their advantages and shortcomings in practical applications. It is expected that highly sensitive photodetectors based on graphene transistors will find important applications in many emerging areas especially flexible, wearable, printable or transparent electronics and high frequency communications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Achieving high performance polymer optoelectronic devices for high efficiency, long lifetime and low fabrication cost

NASA Astrophysics Data System (ADS)

Huang, Jinsong

This thesis described three types of organic optoelectronic devices: polymer light emitting diodes (PLED), polymer photovoltaic solar cell, and organic photo detector. The research in this work focuses improving their performance including device efficiency, operation lifetime simplifying fabrication process. With further understanding in PLED device physics, we come up new device operation model and improved device architecture design. This new method is closely related to understanding of the science and physics at organic/metal oxide and metal oxide/metal interface. In our new device design, both material and interface are considered in order to confine and balance all injected carriers, which has been demonstrated very be successful in increasing device efficiency. We created two world records in device efficiency: 18 lm/W for white emission fluorescence PLED, 22 lm/W for red emission phosphorescence PLED. Slow solvent drying process has been demonstrated to significantly increase device efficiency in poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C 61-butyric acid methyl ester (PCBM) mixture polymer solar cell. From the mobility study by time of flight, the increase of efficiency can be well correlated to the improved carrier transport property due to P3HT crystallization during slow solvent drying. And it is found that, similar to PLED, balanced carrier mobility is essential in high efficient polymer solar cell. There is also a revolution in our device fabrication method. A unique device fabrication method is presented by an electronic glue based lamination process combined with interface modification as a one-step polymer solar cell fabrication process. It can completely skip the thermal evaporation process, and benefit device lifetime by several merits: no air reactive. The device obtained is metal free, semi-transparent, flexible, self-encapsulated, and comparable efficiency with that by regular method. We found the photomultiplication (PM) phenomenon in C60 based device accidentally. The high PM factor makes it good candidate for photo detector. The high gain was assigned to the trapped-charge induced enhanced-injection at C60/PEDOT:PSS interface.

Fabrication techniques and applications of flexible graphene-based electronic devices

NASA Astrophysics Data System (ADS)

Luqi, Tao; Danyang, Wang; Song, Jiang; Ying, Liu; Qianyi, Xie; He, Tian; Ningqin, Deng; Xuefeng, Wang; Yi, Yang; Tian-Ling, Ren

2016-04-01

In recent years, flexible electronic devices have become a hot topic of scientific research. These flexible devices are the basis of flexible circuits, flexible batteries, flexible displays and electronic skins. Graphene-based materials are very promising for flexible electronic devices, due to their high mobility, high elasticity, a tunable band gap, quantum electronic transport and high mechanical strength. In this article, we review the recent progress of the fabrication process and the applications of graphene-based electronic devices, including thermal acoustic devices, thermal rectifiers, graphene-based nanogenerators, pressure sensors and graphene-based light-emitting diodes. In summary, although there are still a lot of challenges needing to be solved, graphene-based materials are very promising for various flexible device applications in the future. Project supported by the National Natural Science Foundation of China (Nos. 60936002, 61025021, 61434001, 61574083), the State Key Development Program for Basic Research of China (No. 2015CB352100), the National Key Project of Science and Technology (No. 2011ZX02403-002) and the Special Fund for Agroscientific Research in the Public Interest of China (No. 201303107). M.A.M is additionally supported by the Postdoctoral Fellowship (PDF) Program of the Natural Sciences and Engineering Research Council (NSERC) of Canada and China's Postdoctoral Science Foundation (CPSF).

High-performance graphene/sulphur electrodes for flexible Li-ion batteries using the low-temperature spraying method

NASA Astrophysics Data System (ADS)

Kumar, Pushpendra; Wu, Feng-Yu; Hu, Lung-Hao; Ali Abbas, Syed; Ming, Jun; Lin, Chia-Nan; Fang, Jason; Chu, Chih-Wei; Li, Lain-Jong

2015-04-01

Elementary sulphur (S) has been shown to be an excellent cathode material in energy storage devices such as Li-S batteries owing to its very high capacity. The major challenges associated with the sulphur cathodes are structural degradation, poor cycling performance and instability of the solid-electrolyte interphase caused by the dissolution of polysulfides during cycling. Tremendous efforts made by others have demonstrated that encapsulation of S materials improves their cycling performance. To make this approach practical for large scale applications, the use of low-cost technology and materials has become a crucial and new focus of S-based Li-ion batteries. Herein, we propose to use a low temperature spraying process to fabricate graphene/S electrode material, where the ink is composed of graphene flakes and the micron-sized S particles prepared by grinding of low-cost S powders. The S particles are found to be well hosted by highly conductive graphene flakes and consequently superior cyclability (~70% capacity retention after 250 cycles), good coulombic efficiency (~98%) and high capacity (~1500 mA h g-1) are obtained. The proposed approach does not require high temperature annealing or baking; hence, another great advantage is to make flexible Li-ion batteries. We have also demonstrated two types of flexible batteries using sprayed graphene/S electrodes.Elementary sulphur (S) has been shown to be an excellent cathode material in energy storage devices such as Li-S batteries owing to its very high capacity. The major challenges associated with the sulphur cathodes are structural degradation, poor cycling performance and instability of the solid-electrolyte interphase caused by the dissolution of polysulfides during cycling. Tremendous efforts made by others have demonstrated that encapsulation of S materials improves their cycling performance. To make this approach practical for large scale applications, the use of low-cost technology and materials has become a crucial and new focus of S-based Li-ion batteries. Herein, we propose to use a low temperature spraying process to fabricate graphene/S electrode material, where the ink is composed of graphene flakes and the micron-sized S particles prepared by grinding of low-cost S powders. The S particles are found to be well hosted by highly conductive graphene flakes and consequently superior cyclability (~70% capacity retention after 250 cycles), good coulombic efficiency (~98%) and high capacity (~1500 mA h g-1) are obtained. The proposed approach does not require high temperature annealing or baking; hence, another great advantage is to make flexible Li-ion batteries. We have also demonstrated two types of flexible batteries using sprayed graphene/S electrodes. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr00885a

Novel nano materials for high performance logic and memory devices

NASA Astrophysics Data System (ADS)

Das, Saptarshi

After decades of relentless progress, the silicon CMOS industry is approaching a stall in device performance for both logic and memory devices due to fundamental scaling limitations. In order to reinforce the accelerating pace, novel materials with unique properties are being proposed on an urgent basis. This list includes one dimensional nanotubes, quasi one dimensional nanowires, two dimensional atomistically thin layered materials like graphene, hexagonal boron nitride and the more recently the rich family of transition metal di-chalcogenides comprising of MoS2, WSe2, WS2 and many more for logic applications and organic and inorganic ferroelectrics, phase change materials and magnetic materials for memory applications. Only time will tell who will win, but exploring these novel materials allow us to revisit the fundamentals and strengthen our understanding which will ultimately be beneficial for high performance device design. While there has been growing interest in two-dimensional (2D) crystals other than graphene, evaluating their potential usefulness for electronic applications is still in its infancies due to the lack of a complete picture of their performance potential. The fact that the 2-D layered semiconducting di-chalcogenides need to be connected to the "outside" world in order to capitalize on their ultimate potential immediately emphasizes the importance of a thorough understanding of the contacts. This thesis demonstrate that through a proper understanding and design of source/drain contacts and the right choice of number of MoS2 layers the excellent intrinsic properties of this 2D material can be harvested. A comprehensive experimental study on the dependence of carrier mobility on the layer thickness of back gated multilayer MoS 2 field effect transistors is also provided. A resistor network model that comprises of Thomas-Fermi charge screening and interlayer coupling is used to explain the non-monotonic trend in the extracted field effect mobility with the layer thickness. The non-monotonic trend suggests that in order to harvest the maximum potential of MoS2 for high performance device applications, a layer thickness in the range of 6-12 nm would be ideal. Finally using scandium contacts on 10nm thick exfoliated MoS2 flakes that are covered by a 15nm ALD grown Al2O3 film, record high mobility of 700cm2/Vs is achieved at room-temperature which is extremely encouraging for the design of high performance logic devices. The destructive nature of the readout process in Ferroelectric Random Access Memories (FeRAMs) is one of the major limiting factors for their wide scale commercialization. Utilizing Ferroelectric Field-Effect Transistor RAM (FeTRAM) instead solves the destructive read out problem, but at the expense of introducing crystalline ferroelectrics that are hard to integrate into CMOS. In order to address these challenges a novel, fully functional, CMOS compatible, One-Transistor-One-Transistor (1T1T) memory cell architecture using an organic ferroelectric -- PVDF-TrFE -- as the memory storage unit (gate oxide) and a silicon nanowire as the memory read out unit (channel material) is proposed and experimentally demonstrated. While evaluating the scaling potential of the above mentioned organic FeTRAM, it is found that the switching time and switching voltage of this organic copolymer PVDF-TrFE exhibits an unexpected scaling behavior as a function of the lateral device dimensions. The phenomenological theory, that explains this abnormal scaling trend, involves in-plane interchain and intrachain interaction of the copolymer - resulting in a power-law dependence of the switching field on the device area (ESW alpha ACH0.1) that is ultimately responsible for the decrease in the switching time and switching voltage. These findings are encouraging since they indicate that scaling the switching voltage and switching time without aggressively scaling the copolymer thickness occurs naturally while scaling the device area -- in this way ultimately improving the packing density and leading towards high performance memory devices.

Polymer photovoltaics with alternating copolymer/fullerene blends and novel device architectures.

PubMed

Inganäs, Olle; Zhang, Fengling; Tvingstedt, Kristofer; Andersson, Lars Mattias; Hellström, Stefan; Andersson, Mats R

2010-05-25

The synthesis of novel conjugated polymers, designed for the purpose of photovoltaic energy conversion, and their properties in polymer/fullerene materials and photovoltaic devices are reviewed. Two families of main-chain polymer donors, based on fluorene or phenylene and donor-acceptor-donor comonomers in alternating copolymers, are used to absorb the high-energy parts of the solar spectrum and to give high photovoltages in combinations with fullerene acceptors in devices. These materials are used in alternative photovoltaic device geometries with enhanced light incoupling to collect larger photocurrents or to enable tandem devices and enhance photovoltage.

Organic-Inorganic Hybrid Ruddlesden-Popper Perovskites: An Emerging Paradigm for High-Performance Light-Emitting Diodes.

PubMed

Liu, Xiao-Ke; Gao, Feng

2018-05-03

Recently, lead halide perovskite materials have attracted extensive interest, in particular, in the research field of solar cells. These materials are fascinating "soft" materials with semiconducting properties comparable to the best inorganic semiconductors like silicon and gallium arsenide. As one of the most promising perovskite family members, organic-inorganic hybrid Ruddlesden-Popper perovskites (HRPPs) offer rich chemical and structural flexibility for exploring excellent properties for optoelectronic devices, such as solar cells and light-emitting diodes (LEDs). In this Perspective, we present an overview of HRPPs on their structural characteristics, synthesis of pure HRPP compounds and thin films, control of their preferential orientations, and investigations of heterogeneous HRPP thin films. Based on these recent advances, future directions and prospects have been proposed. HRPPs are promising to open up a new paradigm for high-performance LEDs.

High-Temperature RF Probe Station For Device Characterization Through 500 deg C and 50 GHz

NASA Technical Reports Server (NTRS)

Schwartz, Zachary D.; Downey, Alan N.; Alterovitz, Samuel A.; Ponchak, George E.; Williams, W. D. (Technical Monitor)

2003-01-01

A high-temperature measurement system capable of performing on-wafer microwave testing of semiconductor devices has been developed. This high temperature probe station can characterize active and passive devices and circuits at temperatures ranging from room temperature to above 500 C. The heating system uses a ceramic heater mounted on an insulating block of NASA shuttle tile material. The temperature is adjusted by a graphical computer interface and is controlled by the software-based feedback loop. The system is used with a Hewlett-Packard 8510C Network Analyzer to measure scattering parameters over a frequency range of 1 to 50 GHz. The microwave probes, cables, and inspection microscope are all shielded to protect from heat damage. The high temperature probe station has been successfully used to characterize gold transmission lines on silicon carbide at temperatures up to 540 C.

Monolayer Transition Metal Dichalcogenides as Light Sources.

PubMed

Pu, Jiang; Takenobu, Taishi

2018-06-13

Reducing the dimensions of materials is one of the key approaches to discovering novel optical phenomena. The recent emergence of 2D transition metal dichalcogenides (TMDCs) has provided a promising platform for exploring new optoelectronic device applications, with their tunable electronic properties, structural controllability, and unique spin valley-coupled systems. This progress report provides an overview of recent advances in TMDC-based light-emitting devices discussed from several aspects in terms of device concepts, material designs, device fabrication, and their diverse functionalities. First, the advantages of TMDCs used in light-emitting devices and their possible functionalities are presented. Second, conventional approaches for fabricating TMDC light-emitting devices are emphasized, followed by introducing a newly established, versatile method for generating light emission in TMDCs. Third, current growing technologies for heterostructure fabrication, in which distinct TMDCs are vertically stacked or laterally stitched, are explained as a possible means for designing high-performance light-emitting devices. Finally, utilizing the topological features of TMDCs, the challenges for controlling circularly polarized light emission and its device applications are discussed from both theoretical and experimental points of view. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Porous TiO₂-Based Gas Sensors for Cyber Chemical Systems to Provide Security and Medical Diagnosis.

PubMed

Galstyan, Vardan

2017-12-19

Gas sensors play an important role in our life, providing control and security of technical processes, environment, transportation and healthcare. Consequently, the development of high performance gas sensor devices is the subject of intense research. TiO₂, with its excellent physical and chemical properties, is a very attractive material for the fabrication of chemical sensors. Meanwhile, the emerging technologies are focused on the fabrication of more flexible and smart systems for precise monitoring and diagnosis in real-time. The proposed cyber chemical systems in this paper are based on the integration of cyber elements with the chemical sensor devices. These systems may have a crucial effect on the environmental and industrial safety, control of carriage of dangerous goods and medicine. This review highlights the recent developments on fabrication of porous TiO₂-based chemical gas sensors for their application in cyber chemical system showing the convenience and feasibility of such a model to provide the security and to perform the diagnostics. The most of reports have demonstrated that the fabrication of doped, mixed and composite structures based on porous TiO₂ may drastically improve its sensing performance. In addition, each component has its unique effect on the sensing properties of material.

Porous TiO2-Based Gas Sensors for Cyber Chemical Systems to Provide Security and Medical Diagnosis

PubMed Central

2017-01-01

Gas sensors play an important role in our life, providing control and security of technical processes, environment, transportation and healthcare. Consequently, the development of high performance gas sensor devices is the subject of intense research. TiO2, with its excellent physical and chemical properties, is a very attractive material for the fabrication of chemical sensors. Meanwhile, the emerging technologies are focused on the fabrication of more flexible and smart systems for precise monitoring and diagnosis in real-time. The proposed cyber chemical systems in this paper are based on the integration of cyber elements with the chemical sensor devices. These systems may have a crucial effect on the environmental and industrial safety, control of carriage of dangerous goods and medicine. This review highlights the recent developments on fabrication of porous TiO2-based chemical gas sensors for their application in cyber chemical system showing the convenience and feasibility of such a model to provide the security and to perform the diagnostics. The most of reports have demonstrated that the fabrication of doped, mixed and composite structures based on porous TiO2 may drastically improve its sensing performance. In addition, each component has its unique effect on the sensing properties of material. PMID:29257076

n-Type Water/Alcohol-Soluble Naphthalene Diimide-Based Conjugated Polymers for High-Performance Polymer Solar Cells.

PubMed

Wu, Zhihong; Sun, Chen; Dong, Sheng; Jiang, Xiao-Fang; Wu, Siping; Wu, Hongbin; Yip, Hin-Lap; Huang, Fei; Cao, Yong

2016-02-17

With the demonstration of small-area, single-junction polymer solar cells (PSCs) with power conversion efficiencies (PCEs) over the 10% performance milestone, the manufacturing of high-performance large-area PSC modules is becoming the most critical issue for commercial applications. However, materials and processes that are optimized for fabricating small-area devices may not be applicable for the production of high-performance large-area PSC modules. One of the challenges is to develop new conductive interfacial materials that can be easily processed with a wide range of thicknesses without significantly affecting the performance of the PSCs. Toward this goal, we report two novel naphthalene diimide-based, self-doped, n-type water/alcohol-soluble conjugated polymers (WSCPs) that can be processed with a broad thickness range of 5 to 100 nm as efficient electron transporting layers (ETLs) for high-performance PSCs. Space charge limited current and electron spin resonance spectroscopy studies confirm that the presence of amine or ammonium bromide groups on the side chains of the WSCP can n-dope PC71BM at the bulk heterojunction (BHJ)/ETL interface, which improves the electron extraction properties at the cathode. In addition, both amino functional groups can induce self-doping to the WSCPs, although by different doping mechanisms, which leads to highly conductive ETLs with reduced ohmic loss for electron transport and extraction. Ultimately, PSCs based on the self-doped WSCP ETLs exhibit significantly improved device performance, yielding PCEs as high as 9.7% and 10.11% for PTB7-Th/PC71BM and PffBT4T-2OD/PC71BM systems, respectively. More importantly, with PffBT4T-2OD/PC71BM BHJ as an active layer, a prominent PCE of over 8% was achieved even when a thick ETL of 100 nm was used. To the best of our knowledge, this is the highest efficiency demonstrated for PSCs with a thick interlayer and light-harvesting layer, which are important criteria for eventually making organic photovoltaic modules based on roll-to-roll coating processes.

High performance aqueous symmetric supercapacitors based on advanced carbon electrodes and hydrophilic poly(vinylidene fluoride) porous separator

NASA Astrophysics Data System (ADS)

Xie, Qinxing; Huang, Xiaolin; Zhang, Yufeng; Wu, Shihua; Zhao, Peng

2018-06-01

The main components of a supercapacitor include two electrodes, electrolyte, and a separator, which are all essential to specify the energy storage capability of the device. In this work, two kinds of porous carbon materials have been fabricated via different routes using pomelo peel as raw material. The specific surface area are 1187 m2 g-1 for the nanosized worm-like carbon, and 1744 m2 g-1 for the nitrogen-enriched microsized carbon. Both carbon materials demonstrate excellent energy storage capability as electrodes for aqueous supercapacitors. According to the three-electrode measurements, the worm-like carbon exhibits a high specific capacitance of 316 F g-1 at 0.2 A g-1 in 6 M KOH, while the other exhibits 471 F g-1 due to the highly enriched nitrogen atoms in structure. In addition, two-electrode coin-type cells have been assembled with the carbon materials as electrodes and hydrophilic poly(vinylidene fluoride) porous membrane as the separator. The assembled cells exhibit high specific capacitances, excellent rate performance and superior cycling durability because of a synergistic effect of the high performance carbon electrodes and hydrophilic porous separator.

Organic Thin Films Deposited by Emulsion-Based, Resonant Infrared, Matrix-Assisted Pulsed Laser Evaporation: Fundamentals and Applications

NASA Astrophysics Data System (ADS)

Ge, Wangyao

Thin film deposition techniques are indispensable to the development of modern technologies as thin film based optical coatings, optoelectronic devices, sensors, and biological implants are the building blocks of many complicated technologies, and their performance heavily depends on the applied deposition technique. Particularly, the emergence of novel solution-processed materials, such as soft organic molecules, inorganic compounds and colloidal nanoparticles, facilitates the development of flexible and printed electronics that are inexpensive, light weight, green and smart, and these thin film devices represent future trends for new technologies. One appealing feature of solution-processed materials is that they can be deposited into thin films using solution-processed deposition techniques that are straightforward, inexpensive, high throughput and advantageous to industrialize thin film based devices. However, solution-processed techniques rely on wet deposition, which has limitations in certain applications, such as multi-layered film deposition of similar materials and blended film deposition of dissimilar materials. These limitations cannot be addressed by traditional, vacuum-based deposition techniques because these dry approaches are often too energetic and can degrade soft materials, such as polymers, such that the performance of resulting thin film based devices is compromised. The work presented in this dissertation explores a novel thin film deposition technique, namely emulsion-based, resonant infrared, matrix-assisted pulsed laser evaporation (RIR-MAPLE), which combines characteristics of wet and dry deposition techniques for solution-processed materials. Previous studies have demonstrated the feasibility of emulsion-based RIR-MAPLE to deposit uniform and continuous organic, nanoparticle and blended films, as well as hetero-structures that otherwise are difficult to achieve. However, fundamental understanding of the growth mechanisms that govern emulsion-based RIR-MAPLE is still missing, which increases the difficulty of using rational design to improve the performance of initial RIR-MAPLE devices that have been demonstrated. As a result, it is important to study the fundamentals of emulsion-based RIR-MAPLE in order to provide insight into the long-term prospects for this thin film deposition technique. This dissertation explores the fundamental deposition mechanisms of emulsion-based RIR-MAPLE by considering the effects of the emulsion target composition (namely, the primary solvent, secondary solvent, and surfactant) on the properties of deposited polymer films. The study of primary solvent effects on hydrophobic polymer deposition helps identify the unique method of film formation for emulsion-based RIR-MAPLE, which can be described as cluster-by-cluster deposition of emulsified particles that yields two levels of ordering (i.e., within the clusters and among the clusters). The generality of this film formation mechanism is tested by applying the lessons learned to hydrophilic polymer deposition. Based on these studies, the deposition design rules to achieve smooth polymer films, which are important for different device applications, are identified according to the properties of the polymer. After discussion of the fundamental deposition mechanisms, three applications of emulsion-based RIR-MAPLE, namely thin film deposition of organic solar cells, polymer/nanoparticle hybrid solar cells, and antimicrobial/fouling-release multifunctional films, are studied. The work on organic solar cells identifies the ideal deposition mode for blended films with nanoscale domain sizes, as well as demonstrates the relationships among emulsion target composition, film properties, and corresponding device performance. The studies of polymer/nanoparticle hybrid solar cells demonstrate precise control of colloidal nanoparticle deposition, in which the integrity of nanoparticles is maintained and a distinct film morphology is achieved when co-deposited with polymers. Finally, the application of antimicrobial and fouling-release multifunctional films demonstrates the importance of blended film deposition with nanoscale phase separation, a key feature to achieving reusable bio-films that can kill bacteria when illuminated with ultraviolet light. Thus, this dissertation provides great insight to the fundamentals of emulsion-based RIR-MAPLE, serves as a valuable reference for future development, and paves the pathway for wider adoption of this unique thin film deposition technique, especially for organic solar cells.

High-performance colossal permittivity materials of (Nb + Er) co-doped TiO2 for large capacitors and high-energy-density storage devices.

PubMed

Tse, Mei-Yan; Wei, Xianhua; Hao, Jianhua

2016-09-21

The search for colossal permittivity (CP) materials is imperative because of their potential for promising applications in the areas of device miniaturization and energy storage. High-performance CP materials require high dielectric permittivity, low dielectric loss and relatively weak dependence of frequency- and temperature. In this work, we first investigate the CP behavior of rutile TiO2 ceramics co-doped with niobium and erbium, i.e., (Er0.5Nb0.5)xTi1-xO2. Excellent dielectric properties were observed in the materials, including a CP of up to 10(4)-10(5) and a low dielectric loss (tan δ) down to 0.03, which are lower than that of the previously reported co-doped TiO2 CP materials when measured at 1 kHz. Stabilities of frequency and temperature were also accomplished via doping Er and Nb. Valence states of the elements in the material were analyzed using X-ray photoelectron spectroscopy. The Er induced secondary phases were observed using elemental mapping and energy-dispersive spectrometry. Consequently, this work may provide comprehensive guidance to develop high-performance CP materials for fully solid-state capacitor and energy storage applications.

Multi-scale theory-assisted nano-engineering of plasmonic-organic hybrid electro-optic device performance

NASA Astrophysics Data System (ADS)

Elder, Delwin L.; Johnson, Lewis E.; Tillack, Andreas F.; Robinson, Bruce H.; Haffner, Christian; Heni, Wolfgang; Hoessbacher, Claudia; Fedoryshyn, Yuriy; Salamin, Yannick; Baeuerle, Benedikt; Josten, Arne; Ayata, Masafumi; Koch, Ueli; Leuthold, Juerg; Dalton, Larry R.

2018-02-01

Multi-scale (correlated quantum and statistical mechanics) modeling methods have been advanced and employed to guide the improvement of organic electro-optic (OEO) materials, including by analyzing electric field poling induced electro-optic activity in nanoscopic plasmonic-organic hybrid (POH) waveguide devices. The analysis of in-device electro-optic activity emphasizes the importance of considering both the details of intermolecular interactions within organic electro-optic materials and interactions at interfaces between OEO materials and device architectures. Dramatic improvement in electro-optic device performance-including voltage-length performance, bandwidth, energy efficiency, and lower optical losses have been realized. These improvements are critical to applications in telecommunications, computing, sensor technology, and metrology. Multi-scale modeling methods illustrate the complexity of improving the electro-optic activity of organic materials, including the necessity of considering the trade-off between improving poling-induced acentric order through chromophore modification and the reduction of chromophore number density associated with such modification. Computational simulations also emphasize the importance of developing chromophore modifications that serve multiple purposes including matrix hardening for enhanced thermal and photochemical stability, control of matrix dimensionality, influence on material viscoelasticity, improvement of chromophore molecular hyperpolarizability, control of material dielectric permittivity and index of refraction properties, and control of material conductance. Consideration of new device architectures is critical to the implementation of chipscale integration of electronics and photonics and achieving the high bandwidths for applications such as next generation (e.g., 5G) telecommunications.

A Nonaqueous Potassium-Based Battery-Supercapacitor Hybrid Device.

PubMed

Fan, Ling; Lin, Kairui; Wang, Jue; Ma, Ruifang; Lu, Bingan

2018-05-01

A low cost nonaqueous potassium-based battery-supercapacitor hybrid device (BSH) is successfully established for the first time with soft carbon as the anode, commercialized activated carbon as the cathode, and potassium bis(fluoro-slufonyl)imide in dimethyl ether as the electrolyte. This BSH reconciles the advantages of potassium ion batteries and supercapacitors, achieving a high energy density of 120 W h kg -1 , a high power density of 599 W kg -1 , a long cycle life of 1500 cycles, and an ultrafast charge/slow discharge performance (energy density and power density are calculated based on the total mass of active materials in the anode and cathode). This work demonstrates a great potential of applying the nonaqueous BSH for low cost electric energy storage systems. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

New evaluation parameter for wearable thermoelectric generators

NASA Astrophysics Data System (ADS)

Wijethunge, Dimuthu; Kim, Woochul

2018-04-01

Wearable devices constitute a key application area for thermoelectric devices. However, owing to new constraints in wearable applications, a few conventional device optimization techniques are not appropriate and material evaluation parameters, such as figure of merit (zT) and power factor (PF), tend to be inadequate. We illustrated the incompleteness of zT and PF by performing simulations and considering different thermoelectric materials. The results indicate a weak correlation between device performance and zT and PF. In this study, we propose a new evaluation parameter, zTwearable, which is better suited for wearable applications compared to conventional zT. Owing to size restrictions, gap filler based device optimization is extremely critical in wearable devices. With respect to the occasions in which gap fillers are used, expressions for power, effective thermal conductivity (keff), and optimum load electrical ratio (mopt) are derived. According to the new parameters, the thermal conductivity of the material has become much more critical now. The proposed new evaluation parameter, namely, zTwearable, is extremely useful in the selection of an appropriate thermoelectric material among various candidates prior to the commencement of the actual design process.

Graphene-on-GaN Hot Electron Transistor

NASA Astrophysics Data System (ADS)

Zubair, Ahmad; Nourbakhsh, Amirhasan; Hong, Jin-Yong; Song, Yi; Qi, Meng; Jena, Debdeep; Kong, Jing; Dresselhaus, Mildred S.; Palacios, Tomas

Hot electron transistors (HETs) are promising devices for potential high-frequency operation that currently CMOS cannot provide. In an HET, carrier transport is due to the injection of hot electrons from an emitter to a collector which is modulated by a base electrode. Therefore, ultra-thin base electrodes are needed to facilitate ultra-short transit time and high performance for THz operation range. In this regard, graphene, the thinnest conductive membrane in nature, is considered the best candidate for the base material in HETs. The existing HETs with SiO2/Si as emitter stack suffer from low current gain and output current density. In this work, we use the two-dimensional electron gas (2-DEG) in a GaN-based heterostructure as emitter and monolayer graphene as the base electrode. The transport study of the proof-of-concept device shows high output current density (>50 A/cm2) , current gain (>3) and ballistic injection efficiency of 75%. These results indicate that performance parameters can be further improved by engineering the band offset of the graphene/collector stack and improved interface between graphene and GaN. Army Research Office (ARO) (Grant Nos. W911NF-14-2-0071, 6930265, and 6930861).

Silicon Materials and Devices R&D | Photovoltaic Research | NREL

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" and "Si-based Tandem Solar Cells"), Next Generation Photovoltaics (NextGen PV III), and devices, especially for photovoltaic (PV) cell applications. PV Research Other Materials & Devices pages: High-Efficiency Crystalline PV Polycrystalline Thin-Film PV Perovskite and Organic PV Advanced PV