Microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2002-01-01

An apparatus for packaging of microelectronic devices, including an integral window. The microelectronic device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The package can include a cofired ceramic frame or body. The package can have an internal stepped structure made of one or more plates, with apertures, which are patterned with metallized conductive circuit traces. The microelectronic device can be flip-chip bonded on the plate to these traces, and oriented so that the light-sensitive side is optically accessible through the window. A cover lid can be attached to the opposite side of the package. The result is a compact, low-profile package, having an integral window that can be hermetically-sealed. The package body can be formed by low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the window being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. Multiple chips can be located within a single package. The cover lid can include a window. The apparatus is particularly suited for packaging of MEMS devices, since the number of handling steps is greatly reduced, thereby reducing the potential for contamination.

Direct laser-patterned micro-supercapacitors from paintable MoS2 films.

PubMed

Cao, Liujun; Yang, Shubin; Gao, Wei; Liu, Zheng; Gong, Yongji; Ma, Lulu; Shi, Gang; Lei, Sidong; Zhang, Yunhuai; Zhang, Shengtao; Vajtai, Robert; Ajayan, Pulickel M

2013-09-09

Micrometer-sized electrochemical capacitors have recently attracted attention due to their possible applications in micro-electronic devices. Here, a new approach to large-scale fabrication of high-capacitance, two-dimensional MoS2 film-based micro-supercapacitors is demonstrated via simple and low-cost spray painting of MoS2 nanosheets on Si/SiO2 chip and subsequent laser patterning. The obtained micro-supercapacitors are well defined by ten interdigitated electrodes (five electrodes per polarity) with 4.5 mm length, 820 μm wide for each electrode, 200 μm spacing between two electrodes and the thickness of electrode is ∼0.45 μm. The optimum MoS2 -based micro-supercapacitor exhibits excellent electrochemical performance for energy storage with aqueous electrolytes, with a high area capacitance of 8 mF cm(-2) (volumetric capacitance of 178 F cm(-3) ) and excellent cyclic performance, superior to reported graphene-based micro-supercapacitors. This strategy could provide a good opportunity to develop various micro-/nanosized energy storage devices to satisfy the requirements of portable, flexible, and transparent micro-electronic devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nanocharacterization Challenges in a Changing Microelectronics Landscape

NASA Astrophysics Data System (ADS)

Brilloüt, Michel

2011-11-01

As the microelectronics industry enters the "nano"-era new challenges emerge. Traditional scaling of the MOS transistor faces major obstacles in fulfilling "Moore's law". New features like strain and new materials (e.g. high k—metal gate stack) are introduced in order to sustain performance increases. For a better electrostatic control, devices will use the third dimension, e.g., in gate-all-around nanowire structures. Due to the escalating cost and complexity of sub-28 nm technologies fewer industrial players can afford the development and production of advanced CMOS processes and many companies acknowledge the fact that the value in products can also be obtained in using more diversified non-digital technologies (the so-called "More-than-Moore" domain). This evolving landscape brings new requirements—discussed in this paper—in terms of physical characterization of technologies and devices.

Method of fabricating a microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2003-01-01

A method of fabricating a microelectronic device package with an integral window for providing optical access through an aperture in the package. The package is made of a multilayered insulating material, e.g., a low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC). The window is inserted in-between personalized layers of ceramic green tape during stackup and registration. Then, during baking and firing, the integral window is simultaneously bonded to the sintered ceramic layers of the densified package. Next, the microelectronic device is flip-chip bonded to cofired thick-film metallized traces on the package, where the light-sensitive side is optically accessible through the window. Finally, a cover lid is attached to the opposite side of the package. The result is a compact, low-profile package, flip-chip bonded, hermetically-sealed package having an integral window.

Photovoltaic energy converter as a chipscale high efficiency power source for implanted active microelectronic devices.

PubMed

Hwang, N-J; Patterson, W R; Song, Y-K; Atay, T; Nurmikko, A V

2004-01-01

We report the development of a microscale photovoltaic energy converter which has been designed and implemented to deliver power to CMOS-based microelectronic chips. The design targets the delivery of voltages on the order of 3V with power levels in excess of 10 mW. The geometry of the prototype device, which has been fabricated and tested, is specifically designed for coupling to an optical fiber, to facilitate remote power delivery in implantable component environment.

Germanium Based Field-Effect Transistors: Challenges and Opportunities

PubMed Central

Goley, Patrick S.; Hudait, Mantu K.

2014-01-01

The performance of strained silicon (Si) as the channel material for today’s metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed. PMID:28788569

Polysilicon for everything?

NASA Astrophysics Data System (ADS)

Ward, M. C. L.; McNie, Mark E.; Bunyan, Robert J.; King, David O.; Carline, Roger T.; Wilson, Rebecca; Gillham, J. P.

1998-09-01

We review some of the attractive attributes of microengineering and relate them to features of the highly successful silicon microelectronics industry. We highlight the need for cost effective functionality rather than ultimate performance as a driver for success and review key examples of polysilicon devices from this point of view. The effective exploitation of the data generated by the cost effective polysilicon sensors is also considered and we conclude that `non traditional' data analysis will need to be exploited if full use is to be made of polysilicon devices.

Self-healable electrically conducting wires for wearable microelectronics.

PubMed

Sun, Hao; You, Xiao; Jiang, Yishu; Guan, Guozhen; Fang, Xin; Deng, Jue; Chen, Peining; Luo, Yongfeng; Peng, Huisheng

2014-09-01

Electrically conducting wires play a critical role in the advancement of modern electronics and in particular are an important key to the development of next-generation wearable microelectronics. However, the thin conducting wires can easily break during use, and the whole device fails to function as a result. Herein, a new family of high-performance conducting wires that can self-heal after breaking has been developed by wrapping sheets of aligned carbon nanotubes around polymer fibers. The aligned carbon nanotubes offer an effective strategy for the self-healing of the electric conductivity, whereas the polymer fiber recovers its mechanical strength. A self-healable wire-shaped supercapacitor fabricated from a wire electrode of this type maintained a high capacitance after breaking and self-healing. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Data encryption standard ASIC design and development report.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Robertson, Perry J.; Pierson, Lyndon George; Witzke, Edward L.

2003-10-01

This document describes the design, fabrication, and testing of the SNL Data Encryption Standard (DES) ASIC. This device was fabricated in Sandia's Microelectronics Development Laboratory using 0.6 {micro}m CMOS technology. The SNL DES ASIC was modeled using VHDL, then simulated, and synthesized using Synopsys, Inc. software and finally IC layout was performed using Compass Design Automation's CAE tools. IC testing was performed by Sandia's Microelectronic Validation Department using a HP 82000 computer aided test system. The device is a single integrated circuit, pipelined realization of DES encryption and decryption capable of throughputs greater than 6.5 Gb/s. Several enhancements accommodate ATMmore » or IP network operation and performance scaling. This design is the latest step in the evolution of DES modules.« less

Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelecronic devices

PubMed Central

Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M.; Calzada, M. Lourdes

2016-01-01

Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound ─ morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT) ─ are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm−2 is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics. PMID:26837240

Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microeletronic [corrected] devices.

PubMed

Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M; Calzada, M Lourdes

2016-02-03

Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound--morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT)--are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm(-2) is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics.

Multilayered microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2003-01-01

An apparatus for packaging of microelectronic devices is disclosed, wherein the package includes an integral window. The microelectronic device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The package can comprise, for example, a cofired ceramic frame or body. The package has an internal stepped structure made of a plurality of plates, with apertures, which are patterned with metallized conductive circuit traces. The microelectronic device can be flip-chip bonded on the plate to these traces, and oriented so that the light-sensitive side is optically accessible through the window. A cover lid can be attached to the opposite side of the package. The result is a compact, low-profile package, having an integral window that can be hermetically-sealed. The package body can be formed by low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the window being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. Multiple chips can be located within a single package, according to some embodiments. The cover lid can include a window. The apparatus is particularly suited for packaging of MEMS devices, since the number of handling steps is greatly reduced, thereby reducing the potential for contamination. The integral window can further include a lens for optically transforming light passing through the window. The package can include an array of binary optic lenslets made integral with the window. The package can include an electrically-switched optical modulator, such as a lithium niobate window attached to the package, for providing a very fast electrically-operated shutter.

SETA Support for the DARPA Microelectronics Technology Insertion Program of the Microelectronics Technology Office

DTIC Science & Technology

1992-08-17

Conclusions. Key personnel planned and administered the 193-nm lithography SBIR workshop on May 7, 1992 as well as planned the GaAs Insertion...converters can use Josephson junctions (JJ) to improve performance. Superconductive quantum interference devices (SQUIDs), such as JJs, are used to form...forward control of a lithography stepper. Mark Conner at Booz-Allen has copies of the charts. You should take a few minutes to review them. I asked Costos

Photopolymerizable liquid encapsulants for microelectronic devices

NASA Astrophysics Data System (ADS)

Baikerikar, Kiran K.

2000-10-01

Plastic encapsulated microelectronic devices consist of a silicon chip that is physically attached to a leadframe, electrically interconnected to input-output leads, and molded in a plastic that is in direct contact with the chip, leadframe, and interconnects. The plastic is often referred to as the molding compound, and is used to protect the chip from adverse mechanical, thermal, chemical, and electrical environments. Encapsulation of microelectronic devices is typically accomplished using a transfer molding process in which the molding compound is cured by heat. Most transfer molding processes suffer from significant problems arising from the high operating temperatures and pressures required to fill the mold. These aspects of the current process can lead to thermal stresses, incomplete mold filling, and wire sweep. In this research, a new strategy for encapsulating microelectronic devices using photopolymerizable liquid encapsulants (PLEs) has been investigated. The PLEs consist of an epoxy novolac-based vinyl ester resin (˜25 wt.%), fused silica filler (70--74 wt.%), and a photoinitiator, thermal initiator, and silane coupling agent. For these encapsulants, the use of light, rather than heat, to initiate the polymerization allows precise control over when the reaction starts, and therefore completely decouples the mold filling and the cure. The low viscosity of the PLEs allows for low operating pressures and minimizes problems associated with wire sweep. In addition, the in-mold cure time for the PLEs is equivalent to the in-mold cure times of current transfer molding compounds. In this thesis, the thermal and mechanical properties, as well as the viscosity and adhesion of photopolymerizable liquid encapsulants, are reported in order to demonstrate that a UV-curable formulation can have the material properties necessary for microelectronic encapsulation. In addition, the effects of the illumination time, postcure time, fused silica loading, and the inclusion of a thermal initiator on the thermal and mechanical properties of the final cured encapsulants have been investigated. The results show that the material properties of the PLEs are the same, if not better, than those exhibited by conventional transfer molding compounds and demonstrate the potential of using PLEs for encapsulating microelectronic devices.

Microelectronic superconducting device with multi-layer contact

DOEpatents

Wellstood, Frederick C.; Kingston, John J.; Clarke, John

1993-01-01

A microelectronic component comprising a crossover is provided comprising a substrate, a first high T.sub.c superconductor thin film, a second insulating thin film comprising SrTiO.sub.3 ; and a third high T.sub.c superconducting film which has strips which crossover one or more areas of the first superconductor film. An insitu method for depositing all three films on a substrate is provided which does not require annealing steps. The photolithographic process is used to separately pattern the high T.sub.c superconductor thin films.

Microelectronic superconducting device with multi-layer contact

DOEpatents

Wellstood, F.C.; Kingston, J.J.; Clarke, J.

1993-10-26

A microelectronic component comprising a crossover is provided comprising a substrate, a first high T[sub c] superconductor thin film, a second insulating thin film comprising SrTiO[sub 3] ; and a third high T[sub c] superconducting film which has strips which crossover one or more areas of the first superconductor film. An in situ method for depositing all three films on a substrate is provided which does not require annealing steps. The photolithographic process is used to separately pattern the high T[sub c] superconductor thin films. 14 figures.

Using FLUKA to Calculate Spacecraft: Single Event Environments: A Practical Approach

NASA Technical Reports Server (NTRS)

Koontz, Steve; Boeder, Paul; Reddell, Brandon

2009-01-01

The FLUKA nuclear transport and reaction code can be developed into a practical tool for calculation of spacecraft and planetary surface asset SEE and TID environments. Nuclear reactions and secondary particle shower effects can be estimated with acceptable accuracy both in-flight and in test. More detailed electronic device and/or spacecraft geometries than are reported here are possible using standard FLUKA geometry utilities. Spacecraft structure and shielding mass. Effects of high Z elements in microelectronic structure as reported previously. Median shielding mass in a generic slab or concentric sphere target geometry are at least approximately applicable to more complex spacecraft shapes. Need the spacecraft shielding mass distribution function applicable to the microelectronic system of interest. SEE environment effects can be calculated for a wide range of spacecraft and microelectronic materials with complete nuclear physics. Evaluate benefits of low Z shielding mass can be evaluated relative to aluminum. Evaluate effects of high Z elements as constituents of microelectronic devices. The principal limitation on the accuracy of the FLUKA based method reported here are found in the limited accuracy and incomplete character of affordable heavy ion test data. To support accurate rate estimates with any calculation method, the aspect ratio of the sensitive volume(s) and the dependence must be better characterized.

Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide.

PubMed

Min Lee, Seung; Hwan Yum, Jung; Larsen, Eric S; Chul Lee, Woo; Keun Kim, Seong; Bielawski, Christopher W; Oh, Jungwoo

2017-10-16

Silicon-on-insulator (SOI) technology improves the performance of devices by reducing parasitic capacitance. Devices based on SOI or silicon-on-sapphire technology are primarily used in high-performance radio frequency (RF) and radiation sensitive applications as well as for reducing the short channel effects in microelectronic devices. Despite their advantages, the high substrate cost and overheating problems associated with complexities in substrate fabrication as well as the low thermal conductivity of silicon oxide prevent broad applications of this technology. To overcome these challenges, we describe a new approach of using beryllium oxide (BeO). The use of atomic layer deposition (ALD) for producing this material results in lowering the SOI wafer production cost. Furthermore, the use of BeO exhibiting a high thermal conductivity might minimize the self-heating issues. We show that crystalline Si can be grown on ALD BeO and the resultant devices exhibit potential for use in advanced SOI technology applications.

Development of high-performance printed organic field-effect transistors and integrated circuits.

PubMed

Xu, Yong; Liu, Chuan; Khim, Dongyoon; Noh, Yong-Young

2015-10-28

Organic electronics is regarded as an important branch of future microelectronics especially suited for large-area, flexible, transparent, and green devices, with their low cost being a key benefit. Organic field-effect transistors (OFETs), the primary building blocks of numerous expected applications, have been intensively studied, and considerable progress has recently been made. However, there are still a number of challenges to the realization of high-performance OFETs and integrated circuits (ICs) using printing technologies. Therefore, in this perspective article, we investigate the main issues concerning developing high-performance printed OFETs and ICs and seek strategies for further improvement. Unlike many other studies in the literature that deal with organic semiconductors (OSCs), printing technology, and device physics, our study commences with a detailed examination of OFET performance parameters (e.g., carrier mobility, threshold voltage, and contact resistance) by which the related challenges and potential solutions to performance development are inspected. While keeping this complete understanding of device performance in mind, we check the printed OFETs' components one by one and explore the possibility of performance improvement regarding device physics, material engineering, processing procedure, and printing technology. Finally, we analyze the performance of various organic ICs and discuss ways to optimize OFET characteristics and thus develop high-performance printed ICs for broad practical applications.

Ceramic materials of low-temperature synthesis for dielectric coating applied by 3D aerosol printing used in nano- and microelectronics, lighting engineering, and spacecraft control devices

NASA Astrophysics Data System (ADS)

Ivanov, A. A.; Tuev, V. I.; Nisan, A. V.; Potapov, G. N.

2016-11-01

A synthesis technique of low-temperature ceramic material based on aluminosilicates of dendrimer morphology capable to contain up to 80 wt % of nitrides and oxides of high-melting compounds as filler has been developed. The synthesis is based on a sol-gel method followed by mechanochemical treatment and ultrasonic dispersing. Dielectric ceramic layers with the layer thickness in the nanometer range and high thermal conductivity have been obtained for the first time by 3D aerosol printing of the synthesized material. The study of the obtained ceramic coating on the metal surface (Al) has proved its use prospects in microelectronics, light engineering, and devices for special purposes.

Free-world microelectronic manufacturing equipment

NASA Astrophysics Data System (ADS)

Kilby, J. S.; Arnold, W. H.; Booth, W. T.; Cunningham, J. A.; Hutcheson, J. D.; Owen, R. W.; Runyan, W. R.; McKenney, Barbara L.; McGrain, Moira; Taub, Renee G.

1988-12-01

Equipment is examined and evaluated for the manufacture of microelectronic integrated circuit devices and sources for that equipment within the Free World. Equipment suitable for the following are examined: single-crystal silicon slice manufacturing and processing; required lithographic processes; wafer processing; device packaging; and test of digital integrated circuits. Availability of the equipment is also discussed, now and in the near future. Very adequate equipment for most stages of the integrated circuit manufacturing process is available from several sources, in different countries, although the best and most widely used versions of most manufacturing equipment are made in the United States or Japan. There is also an active market in used equipment, suitable for manufacture of capable integrated circuits with performance somewhat short of the present state of the art.

CRRES microelectronics package flight data analysis

NASA Technical Reports Server (NTRS)

Stassinopoulos, E. G.; Brucker, G. J.; Stauffer, C. A.

1993-01-01

A detailed in-depth analysis was performed on the data from some of the CRRES MEP (Microelectronics Package) devices. These space flight measurements covered a period of about fourteen months of mission lifetime. Several types of invalid data were identified and corrections were made. Other problems were noted and adjustments applied, as necessary. Particularly important and surprising were observations of abnormal device behavior in many parts that could neither be explained nor correlated to causative events. Also, contrary to prevailing theory, proton effects appeared to be far more significant and numerous than cosmic ray effects. Another unexpected result was the realization that only nine out of thirty-two p-MOS dosimeters on the MEP indicated a valid operation. Comments, conclusions, and recommendations are given.

GaN Nanowire Devices: Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Scott, Reum

The development of microelectronics in the last 25 years has been characterized by an exponential increase of the bit density in integrated circuits (ICs) with time. Scaling solid-state devices improves cost, performance, and power; as such, it is of particular interest for companies, who gain a market advantage with the latest technology. As a result, the microelectronics industry has driven transistor feature size scaling from 10 μm to ~30 nm during the past 40 years. This trend has persisted for 40 years due to optimization, new processing techniques, device structures, and materials. But when noting processor speeds from the 1970's to 2009 and then again in 2010, the implication would be that the trend has ceased. To address the challenge of shrinking the integrated circuit (IC), current research is centered on identifying new materials and devices that can supplement and/or potentially supplant it. Bottom-up methods tailor nanoscale building blocks---atoms, molecules, quantum dots, and nanowires (NWs)---to be used to overcome these limitations. The Group IIIA nitrides (InN, AlN, and GaN) possess appealing properties such as a direct band gap spanning the whole solar spectrum, high saturation velocity, and high breakdown electric field. As a result nanostructures and nanodevices made from GaN and related nitrides are suitable candidates for efficient nanoscale UV/ visible light emitters, detectors, and gas sensors. To produce devices with such small structures new fabrication methods must be implemented. Devices composed of GaN nanowires were fabricated using photolithography and electron beam lithography. The IV characteristics of these devices were noted under different illuminations and the current tripled from 4.8*10-7 A to 1.59*10 -6 A under UV light which persisted for at least 5hrs.

Modeling Self-Heating Effects in Nanoscale Devices

NASA Astrophysics Data System (ADS)

Raleva, K.; Shaik, A. R.; Vasileska, D.; Goodnick, S. M.

2017-08-01

Accurate thermal modeling and the design of microelectronic devices and thin film structures at the micro- and nanoscales poses a challenge to electrical engineers who are less familiar with the basic concepts and ideas in sub-continuum heat transport. This book aims to bridge that gap. Efficient heat removal methods are necessary to increase device performance and device reliability. The authors provide readers with a combination of nanoscale experimental techniques and accurate modeling methods that must be employed in order to determine a device's temperature profile.

The design of radiation-hardened ICs for space - A compendium of approaches

NASA Technical Reports Server (NTRS)

Kerns, Sherra E.; Shafer, B. D; Rockett, L. R., Jr.; Pridmore, J. S.; Berndt, D. F.

1988-01-01

Several technologies, including bulk and epi CMOS, CMOS/SOI-SOS (silicon-on-insulator-silicon-on-sapphire), CML (current-mode logic), ECL (emitter-coupled logic), analog bipolar (JI, single-poly DI, and SOI) and GaAs E/D (enhancement/depletion) heterojunction MESFET, are discussed. The discussion includes the direct effects of space radiation on microelectronic materials and devices, how these effects are evidenced in circuit and device design parameter variations, the particular effects of most significance to each functional class of circuit, specific techniques for hardening high-speed circuits, design examples for integrated systems, including operational amplifiers and A/D (analog/digital) converters, and the computer simulation of radiation effects on microelectronic ISs.

Advanced Microelectronics Technologies for Future Small Satellite Systems

NASA Technical Reports Server (NTRS)

Alkalai, Leon

1999-01-01

Future small satellite systems for both Earth observation as well as deep-space exploration are greatly enabled by the technological advances in deep sub-micron microelectronics technologies. Whereas these technological advances are being fueled by the commercial (non-space) industries, more recently there has been an exciting new synergism evolving between the two otherwise disjointed markets. In other words, both the commercial and space industries are enabled by advances in low-power, highly integrated, miniaturized (low-volume), lightweight, and reliable real-time embedded systems. Recent announcements by commercial semiconductor manufacturers to introduce Silicon On Insulator (SOI) technology into their commercial product lines is driven by the need for high-performance low-power integrated devices. Moreover, SOI has been the technology of choice for many space semiconductor manufacturers where radiation requirements are critical. This technology has inherent radiation latch-up immunity built into the process, which makes it very attractive to space applications. In this paper, we describe the advanced microelectronics and avionics technologies under development by NASA's Deep Space Systems Technology Program (also known as X2000). These technologies are of significant benefit to both the commercial satellite as well as the deep-space and Earth orbiting science missions. Such a synergistic technology roadmap may truly enable quick turn-around, low-cost, and highly capable small satellite systems for both Earth observation as well as deep-space missions.

The Integration of Bacteriorhodopsin Proteins with Semiconductor Heterostructure Devices

NASA Astrophysics Data System (ADS)

Xu, Jian

2008-03-01

Bioelectronics has emerged as one of the most rapidly developing fields among the active frontiers of interdisciplinary research. A major thrust in this field is aimed at the coupling of the technologically-unmatched performance of biological systems, such as neural and sensing functions, with the well developed technology of microelectronics and optoelectronics. To this end we have studied the integration of a suitably engineered protein, bacteriorhodopsin (BR), with semiconductor optoelectronic devices and circuits. Successful integration will potentially lead to ultrasensitive sensors with polarization selectivity and built-in preprocessing capabilities that will be useful for high speed tracking, motion and edge detection, biological detection, and artificial vision systems. In this presentation we will summarize our progresses in this area, which include fundamental studies on the transient dynamics of photo-induced charge shift in BR and the coupling mechanism at protein-semiconductor interface for effective immobilizing and selectively integrating light sensitive proteins with microelectronic devices and circuits, and the device engineering of BR-transistor-integrated optical sensors as well as their applications in phototransceiver circuits. Work done in collaboration with Pallab Bhattacharya, Jonghyun Shin, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI; Robert R. Birge, Department of Chemistry, University of Connecticut, Storrs, CT 06269; and György V'ar'o, Institute of Biophysics, Biological Research Center of the Hungarian Academy of Science, H-6701 Szeged, Hungary.

Center for High-Frequency Microelectronics

DTIC Science & Technology

1992-08-31

34 IEEE Transactions on Electron Devices, 38, No. 6, pp. 1324-1333, June 1991. 185. C. C. Chen, R. K. Mains and G. I. Haddad, " High - Power Generation in...Weiss, J. Hu and W.-P. Hong, "Electronic 0 Properties of Power High Electron Mobility Transistors," Conference on Ballistic Electrons for Transistors...method at higher frequencies than previously believed. - Calculations of high - power generation modes in Si IMPATT devices in the 100-200 GHz range have

Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liang, H. L.; Mei, Z. X.; Zhang, Q. H.

2011-05-30

High-quality wurtzite MgZnO film was deposited on Si(111) substrate via a delicate interface engineering using BeO, by which solar-blind ultraviolet photodetectors were fabricated on the n-MgZnO(0001)/p-Si(111) heterojunction. A thin Be layer was deposited on clean Si surface with subsequent in situ oxidation processes, which provides an excellent template for high-Mg-content MgZnO growth. The interface controlling significantly improves the device performance, as the photodetector demonstrates a sharp cutoff wavelength at 280 nm, consistent with the optical band gap of the epilayer. Our experimental results promise potential applications of this technique in integration of solar-blind ultraviolet optoelectronic device with Si microelectronic technologies.

Scalable fabrication of carbon-based MEMS/NEMS and their applications: a review

NASA Astrophysics Data System (ADS)

Jiang, Shulan; Shi, Tielin; Zhan, Xiaobin; Xi, Shuang; Long, Hu; Gong, Bo; Li, Junjie; Cheng, Siyi; Huang, Yuanyuan; Tang, Zirong

2015-11-01

The carbon-based micro/nano electromechanical system (MEMS/NEMS) technique provides a powerful approach to large-scale manufacture of high-aspect-ratio carbon structures for wafer-level processing. The fabricated three-dimensional (3D) carbon structures have the advantages of excellent electrical and electrochemical properties, and superior biocompatibility. In order to improve their performance for applications in micro energy storage devices and microsensors, an increase in the footprint surface area is of great importance. Various approaches have been proposed for fabricating large surface area carbon-based structures, including the integration of nanostructures such as carbon nanotubes (CNTs), graphene, nanowires, nanofilms and nanowrinkles onto 3D structures, which has been proved to be effective and productive. Moreover, by etching the 3D photoresist microstructures through oxygen plasma or modifying the photoresist with specific materials which can be etched in the following pyrolysis process, micro/nano hierarchical carbon structures have been fabricated. These improved structures show excellent performance in various applications, especially in the fields of biological sensors, surface-enhanced Raman scattering, and energy storage devices such as micro-supercapacitors and fuel cells. With the rapid development of microelectronic devices, the carbon-based MEMS/NEMS technique could make more aggressive moves into microelectronics, sensors, miniaturized power systems, etc. In this review, the recent advances in the fabrication of micro/nano hierarchical carbon-based structures are introduced and the technical challenges and future outlook of the carbon-based MEMS/NEMS techniques are also analyzed.

Geckoprinting: assembly of microelectronic devices on unconventional surfaces by transfer printing with isolated gecko setal arrays

PubMed Central

Jeong, Jaeyoung; Kim, Juho; Song, Kwangsun; Autumn, Kellar; Lee, Jongho

2014-01-01

Developing electronics in unconventional forms provides opportunities to expand the use of electronics in diverse applications including bio-integrated or implanted electronics. One of the key challenges lies in integrating semiconductor microdevices onto unconventional substrates without glue, high pressure or temperature that may cause damage to microdevices, substrates or interfaces. This paper describes a solution based on natural gecko setal arrays that switch adhesion mechanically on and off, enabling pick and place manipulation of thin microscale semiconductor materials onto diverse surfaces including plants and insects whose surfaces are usually rough and irregular. A demonstration of functional ‘geckoprinted’ microelectronic devices provides a proof of concept of our results in practical applications. PMID:25056216

A novel monolithic piezoelectric actuated flexure-mechanism based wire clamp for microelectronic device packaging.

PubMed

Liang, Cunman; Wang, Fujun; Tian, Yanling; Zhao, Xingyu; Zhang, Hongjie; Cui, Liangyu; Zhang, Dawei; Ferreira, Placid

2015-04-01

A novel monolithic piezoelectric actuated wire clamp is presented in this paper to achieve fast, accurate, and robust microelectronic device packaging. The wire clamp has compact, flexure-based mechanical structure and light weight. To obtain large and robust jaw displacements and ensure parallel jaw grasping, a two-stage amplification composed of a homothetic bridge type mechanism and a parallelogram leverage mechanism was designed. Pseudo-rigid-body model and Lagrange approaches were employed to conduct the kinematic, static, and dynamic modeling of the wire clamp and optimization design was carried out. The displacement amplification ratio, maximum allowable stress, and natural frequency were calculated. Finite element analysis (FEA) was conducted to evaluate the characteristics of the wire clamp and wire electro discharge machining technique was utilized to fabricate the monolithic structure. Experimental tests were carried out to investigate the performance and the experimental results match well with the theoretical calculation and FEA. The amplification ratio of the clamp is 20.96 and the working mode frequency is 895 Hz. Step response test shows that the wire clamp has fast response and high accuracy and the motion resolution is 0.2 μm. High speed precision grasping operations of gold and copper wires were realized using the wire clamper.

Investigation of “benign” ionic content in epoxy that induces microelectronic device failure

Treesearch

Gregory T. Schueneman; Jeffery Kingsbury; Edmund Klinkerch

2011-01-01

Microelectronics and the devices dependent upon them have the extremely challenging requirements of becoming more capable and less expensive every year. This drives the industry to pack more functions into an ever smaller footprint until the next technological revolution. Adding to this situation is the removal of lead from the bill of materials followed closely by...

Radiation measurement in the environment of FLASH using passive dosimeters

NASA Astrophysics Data System (ADS)

Mukherjee, B.; Rybka, D.; Makowski, D.; Lipka, T.; Simrock, S.

2007-08-01

Sophisticated electronic devices comprising sensitive microelectronic components have been installed in the close proximity of the 720 MeV superconducting electron linear accelerator (linac) driving the FLASH (Free Electron Laser in Hamburg), presently in operation at DESY in Hamburg. Microelectronic chips are inherently vulnerable to ionizing radiation, usually generated during routine operation of high-energy particle accelerator facilities like the FLASH. Hence, in order to assess the radiation effect on microelectronic chips and to develop suitable mitigation strategy, it becomes imperative to characterize the radiation field in the FLASH environment. We have evaluated the neutron and gamma energy (spectra) and dose distributions at critical locations in the FLASH tunnel using superheated emulsion (bubble) detectors, GaAs light emitting diodes (LED), LiF-thermoluminescence dosimeters (TLD) and radiochromic (Gafchromic EBT) films. This paper highlights the application of passive dosimeters for an accurate analysis of the radiation field produced by high-energy electron linear accelerators.

Using SDI-12 with ST microelectronics MCU's

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saari, Alexandra; Hinzey, Shawn Adrian; Frigo, Janette Rose

2015-09-03

ST Microelectronics microcontrollers and processors are readily available, capable and economical processors. Unfortunately they lack a broad user base like similar offerings from Texas Instrument, Atmel, or Microchip. All of these devices could be useful in economical devices for remote sensing applications used with environmental sensing. With the increased need for environmental studies, and limited budgets, flexibility in hardware is very important. To that end, and in an effort to increase open support of ST devices, I am sharing my teams' experience in interfacing a common environmental sensor communication protocol (SDI-12) with ST devices.

Sub-Shot Noise Power Source for Microelectronics

NASA Technical Reports Server (NTRS)

Strekalov, Dmitry V.; Yu, Nan; Mansour, Kamjou

2011-01-01

Low-current, high-impedance microelectronic devices can be affected by electric current shot noise more than they are affected by Nyquist noise, even at room temperature. An approach to implementing a sub-shot noise current source for powering such devices is based on direct conversion of amplitude-squeezed light to photocurrent. The phenomenon of optical squeezing allows for the optical measurements below the fundamental shot noise limit, which would be impossible in the domain of classical optics. This becomes possible by affecting the statistical properties of photons in an optical mode, which can be considered as a case of information encoding. Once encoded, the information describing the photon (or any other elementary excitations) statistics can be also transmitted. In fact, it is such information transduction from optics to an electronics circuit, via photoelectric effect, that has allowed the observation of the optical squeezing. It is very difficult, if not technically impossible, to directly measure the statistical distribution of optical photons except at extremely low light level. The photoelectric current, on the other hand, can be easily analyzed using RF spectrum analyzers. Once it was observed that the photocurrent noise generated by a tested light source in question is below the shot noise limit (e.g. produced by a coherent light beam), it was concluded that the light source in question possess the property of amplitude squeezing. The main novelty of this technology is to turn this well-known information transduction approach around. Instead of studying the statistical property of an optical mode by measuring the photoelectron statistics, an amplitude-squeezed light source and a high-efficiency linear photodiode are used to generate photocurrent with sub-Poissonian electron statistics. By powering microelectronic devices with this current source, their performance can be improved, especially their noise parameters. Therefore, a room-temperature sub-shot noise current source can be built that will be beneficial for a very broad range of low-power, low-noise electronic instruments and applications, both cryogenic and room-temperature. Taking advantage of recent demonstrations of the squeezed light sources based on optical micro-disks, this sub-shot noise current source can be made compatible with the size/power requirements specific of the electronic devices it will support.

The Co-60 gamma-ray irradiation effects on the Al/HfSiO4/p-Si/Al MOS capacitors

NASA Astrophysics Data System (ADS)

Lok, R.; Kaya, S.; Karacali, H.; Yilmaz, E.

2017-12-01

In this work, the initial interface trap density (Nit) to examine device compability for microelectronics and then the Co-60 gamma irradiation responses of Al/HfSiO4/p-Si/Al (MOS) capacitors were investigated in various dose ranges up to 70 Gy. Pre-irradiation response of the devices was evaluated from high frequency (HF) and low frequency (LF) capacitance method and the Nit was calculated as 9.91 × 1011 cm-2 which shows that the HfSiO4/p-Si interface quality is convenient for microelectronics applications. The irradiation responses of the devices were carried out from flat-band and mid-gap voltage shifts obtained from stretch of capacitance characteristics prior to and after irradiation. The results show that the flat band voltages very slightly shifted to positive voltage values demonstrating the enhancement of negative charge trapping in device structure. The sensitivity of the Al/HfSiO4/p-Si/Al MOS capacitors was found to be 4.41 mV/Gy for 300 nm-thick HfSiO4 gate dielectrics. This value approximately 6.5 times smaller compared to the same thickness conventional SiO2 based MOS devices. Therefore, HfSiO4 exhibits crucial irradiation tolerance in gamma irradiation environment. Consequently, HfSiO4 dielectrics may have significant usage for microelectronic technology as a radiation hard material where radiation field exists such as in space applications.

Trusted Defense Microelectronics: Future Access and Capabilities Are Uncertain

DTIC Science & Technology

2015-10-28

Board Task Force on High Performance Microchip Supply and documentation and discussions with industry and DOD officials in September and October...the defense and microelectronics industry . DOD’s review of this report deemed some of this information as sensitive but unclassified. What GAO...increased specialization and industry consolidation. • Once dominated by domestic sources, the supply chain for microelectronics manufacturing is a global one

Stroboscopic Imaging Interferometer for MEMS Performance Measurement

DTIC Science & Technology

2007-07-15

Optical Iocusing L.aser Fiber Optics I) c 0 Mim er Collimator - C d Microcope lcam. indo Cold Objcclive Splitte FingerCCD "Mount irnro MEMS PicL zStack...Electronics and Photonics Laboratory: Microelectronics, VLSI reliability, failure analysis, solid-state device physics, compound semiconductors

Hardware Acceleration of Adaptive Neural Algorithms.

DOE Office of Scientific and Technical Information (OSTI.GOV)

James, Conrad D.

As tradit ional numerical computing has faced challenges, researchers have turned towards alternative computing approaches to reduce power - per - computation metrics and improve algorithm performance. Here, we describe an approach towards non - conventional computing that strengthens the connection between machine learning and neuroscience concepts. The Hardware Acceleration of Adaptive Neural Algorithms (HAANA) project ha s develop ed neural machine learning algorithms and hardware for applications in image processing and cybersecurity. While machine learning methods are effective at extracting relevant features from many types of data, the effectiveness of these algorithms degrades when subjected to real - worldmore » conditions. Our team has generated novel neural - inspired approa ches to improve the resiliency and adaptability of machine learning algorithms. In addition, we have also designed and fabricated hardware architectures and microelectronic devices specifically tuned towards the training and inference operations of neural - inspired algorithms. Finally, our multi - scale simulation framework allows us to assess the impact of microelectronic device properties on algorithm performance.« less

Millimeter-wave MMIC technology for smart weapons

NASA Astrophysics Data System (ADS)

Seashore, Charles R.

1994-12-01

Millimeter wave MMIC component technology has made dramatic progress over the last ten years largely due to funding stimulation received under the ARPA Tri-Service MIMIC program. In several smart weapon systems, MMIC components are now specified as the baseline approach for millimeter wave radar transceiver hardware. Availability of this new frontier in microelectronics has also enabled realization of sensor fusion for multispectral capability to defeat many forms of known countermeasures. The current frequency range for these MMIC-based components is approximately 30 to 100 GHz. In several cases, it has been demonstrated that the MMIC component performance has exceeded that available from hybrid microstrip circuits using selected discrete devices. However, challenges still remain in chip producibility enhancement and cost reduction since many of the essential device structure candidates are themselves emerging technologies with a limited wafer fabrication history and accumulated test databases. It is concluded that smart weapons of the future will rely heavily on advanced microelectronics to satisfy performance requirements as well as meeting stringent packaging and power source constraints.

Direct Prototyping of Patterned Nanoporous Carbon: A Route from Materials to On-chip Devices

PubMed Central

Shen, Caiwei; Wang, Xiaohong; Zhang, Wenfeng; Kang, Feiyu

2013-01-01

Prototyping of nanoporous carbon membranes with three-dimensional microscale patterns is significant for integration of such multifunctional materials into various miniaturized systems. Incorporating nano material synthesis into microelectronics technology, we present a novel approach to direct prototyping of carbon membranes with highly nanoporous structures inside. Membranes with significant thicknesses (1 ~ 40 μm) are rapidly prototyped at wafer level by combining nano templating method with readily available microfabrication techniques, which include photolithography, high-temperature annealing and etching. In particular, the high-surface-area membranes are specified as three-dimensional electrodes for micro supercapacitors and show high performance compared to reported ones. Improvements in scalability, compatibility and cost make the general strategy promising for batch fabrication of operational on-chip devices or full integration of three-dimensional nanoporous membranes with existing micro systems. PMID:23887486

Vacuum microelectronics for beam power and rectennas

NASA Technical Reports Server (NTRS)

Gray, Henry F.

1989-01-01

Vacuum Microelectronic devices can be described as vacuum transistors or micro-miniature vacuum tubes, as one chooses. The fundamental reason behind this new technology is the very large current densities available from field emitters, namely as high as 10(8) A/sq cm. Array current densities as high as 1000 A/sq cm have been measured. Total electron transit times from source to drain for 1 micron feature size devices have been predicted to be about 150fs. This very short transit time implies the possibility of submillimeter wave transmitters and rectennas in devices which can operate with reasonably high voltages and which are small in size and are lightweight. In addition, they are expected to be extremely radiation hard and very temperature insensitive. That is, they are expected to have radiation hardness characteristics similar to vacuum tubes, and both the high temperature and low temperature limits should be determined by the package. That is, there should be no practical intrinsic temperature or carrier freezeout problems for devices based on metals or composites. But the technology is difficult to implement at the present time because it is based on 300 to 500 angstrom radius field emitters which must be relatively uniform. There is also the need to understand the non-equilibrium transport physics in the near-surface regions of the field emitters.

Microelectronics-Based Biosensors Dedicated to the Detection of Neurotransmitters: A Review

PubMed Central

Mirzaei, Maryam; Sawan, Mohamad

2014-01-01

Dysregulation of neurotransmitters (NTs) in the human body are related to diseases such as Parkinson's and Alzheimer's. The mechanisms of several neurological disorders, such as epilepsy, have been linked to NTs. Because the number of diagnosed cases is increasing, the diagnosis and treatment of such diseases are important. To detect biomolecules including NTs, microtechnology, micro and nanoelectronics have become popular in the form of the miniaturization of medical and clinical devices. They offer high-performance features in terms of sensitivity, as well as low-background noise. In this paper, we review various devices and circuit techniques used for monitoring NTs in vitro and in vivo and compare various methods described in recent publications. PMID:25264957

PREFACE: The Second Conference on Microelectronics, Microsystems and Nanotechnology

NASA Astrophysics Data System (ADS)

Nassiopoulou, Androula G.; Papanikolaou, Nikos; Tsamis, Christos

2005-01-01

The Second Conference on Microelectronics, Microsystems and Nanotechnology took place at the National Centre for Scientific Research `Demokritos', in Athens, Greece, between 14 and 17 November 2004. The conference was organized by the Institute of Microelectronics (IMEL) with the aim to bring together scientists and engineers working in the above exciting fields in an interactive forum. The conference included 45 oral presentations with 9 invited papers and was attended by 146 participants from 16 countries. The topics covered were nanotechnologies, quantum devices, sensors, micro- and nano-systems, semiconductor devices, C-MOS fabrication and characterization techniques, new materials, and IC design. Quantum devices and nanostructured materials attracted considerable attention. Both theoretical and experimental studies of metallic and semiconducting quantum systems were presented, with emphasis on their applications in electronics, optoelectronics, and nanocrystal memory devices. Another exciting topic was the recent developments in biocompatible lithographic processes for applications in biosensors. In particular novel processes for bio-friendly lithography, together with innovations in Si sensors for applications in medicine and food industry were presented. Recent developments and perspectives in CMOS technology towards the ultimate limit were also discussed. The conference covered issues and concepts of IC design with two invited talks on RF design and cryptography.The conference included presentations from several companies active in the field of microelectronics and systems in Greece.

IR DirectFET Extreme Environments Evaluation Final Report

NASA Technical Reports Server (NTRS)

Burmeister, Martin; Mottiwala, Amin

2008-01-01

In 2007, International Rectifier (IR) introduced a new version of its DirectFET metal oxide semiconductor field effect transistor (MOSFET) packaging. The new version (referred to as 'Version 2') enhances device moisture resistance, makes surface mount (SMT) assembly of these devices to printed wiring boards (PWBs) more repeatable, and subsequent assembly inspection simpler. In the present study, the National Aeronautics Space Administration (NASA) Jet Propulsion Laboratory (JPL), in collaboration with Stellar Microelectronics (Stellar), continued an evaluation of the DirectFET that they started together in 2006. The present study focused on comparing the two versions of the DirectFET and examining the suitability of the DirectFET devices for space applications. This study evaluated both versions of two DirectFET packaged devices that had both been shown in the 2006 study to have the best electrical and thermal properties: the IRF6635 and IRF6644. The present study evaluated (1) the relative electrical and thermal performance of both versions of each device, (2) the performance through high reliability testing, and (3) the performance of these devices in combination with a range of alternate solder alloys in the extreme thermal environments of deep space....

Hydrogen ion microlithography

DOEpatents

Tsuo, Y. Simon; Deb, Satyen K.

1990-01-01

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing.

Charge collection and SEU mechanisms

NASA Astrophysics Data System (ADS)

Musseau, O.

1994-01-01

In the interaction of cosmic ions with microelectronic devices a dense electron-hole plasma is created along the ion track. Carriers are separated and transported by the electric field and under the action of the concentration gradient. The subsequent collection of these carriers induces a transient current at some electrical node of the device. This "ionocurrent" (single ion induced current) acts as any electrical perturbation in the device, propagating in the circuit and inducing failures. In bistable systems (registers, memories) the stored data can be upset. In clocked devices (microprocessors) the parasitic perturbation may propagate through the device to the outputs. This type of failure only effects the information, and do not degrade the functionally of the device. The purpose of this paper is to review the mechanisms of single event upset in microelectronic devices. Experimental and theoretical results are presented, and actual questions and problems are discussed. A brief introduction recalls the creation of the dense plasma of electron-hole pairs. The basic processes for charge collection in a simple np junction (drift and diffusion) are presented. The funneling-field effect is discussed and experimental results are compared to numerical simulations and semi-empirical models. Charge collection in actual microelectronic structures is then presented. Due to the parasitic elements, coupling effects are observed. Geometrical effects, in densely packed structures, results in multiple errors. Electronic couplings are due to the carriers in excess, acting as minority carriers, that trigger parasitic bipolar transistors. Single event upset of memory cells is discussed, based on numerical and experimental data. The main parameters for device characterization are presented. From the physical interpretation of charge collection mechanisms, the intrinsic sensitivity of various microelectronic technologies is determined and compared to experimental data. Scaling laws and future trends are finally discussed.

Organic mixed conductors for bioelectronic applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Rivnay, Jonathan

2016-09-01

Direct measurement and stimulation of electrophysiological activity is a staple of neural and cardiac health monitoring, diagnosis and/or therapy. The ability to sensitively detect these signals can be enhanced by organic electronic materials that show mixed conduction properties (both electronic and ionic transport) in order to bridge the inherent mismatch that is prevalent between biological systems and traditional microelectronic materials/devices. Organic electrochemical transistors (OECTs) are one class of devices that utilize organic mixed conductors as the transistor channel, and have shown considerable promise as amplifying transducers due to their stability in aqueous conditions and high transconductance. These devices are fabricated in flexible, conformable form factors for in vivo recordings of epileptic activity, and for cutaneous EEG and ECG recordings in human subjects. The majority of high performance devices are based on conducting polymers such as poly(3,4-ethylenedioxythiophene) :poly(styrenesulfonate), PEDOT:PSS. By investigating PEDOT-based materials and devices, we are able to construct design rules for new formulations/materials. Introducing glycolated side chains to carefully selected semiconducting polymer backbones has enabled a new class high performance bioelectronic materials that feature high volumetric capacitance, transconductance >10mS (device dimensions ca. 10um), and steep subthreshold switching characteristics. A sub-set of these materials outperform PEDOT:PSS and shows significant promise for low power in vitro and in vivo biosensing applications.

Spoked-ring microcavities: enabling seamless integration of nanophotonics in unmodified advanced CMOS microelectronics chips

NASA Astrophysics Data System (ADS)

Wade, Mark T.; Shainline, Jeffrey M.; Orcutt, Jason S.; Ram, Rajeev J.; Stojanovic, Vladimir; Popovic, Milos A.

2014-03-01

We present the spoked-ring microcavity, a nanophotonic building block enabling energy-efficient, active photonics in unmodified, advanced CMOS microelectronics processes. The cavity is realized in the IBM 45nm SOI CMOS process - the same process used to make many commercially available microprocessors including the IBM Power7 and Sony Playstation 3 processors. In advanced SOI CMOS processes, no partial etch steps and no vertical junctions are available, which limits the types of optical cavities that can be used for active nanophotonics. To enable efficient active devices with no process modifications, we designed a novel spoked-ring microcavity which is fully compatible with the constraints of the process. As a modulator, the device leverages the sub-100nm lithography resolution of the process to create radially extending p-n junctions, providing high optical fill factor depletion-mode modulation and thereby eliminating the need for a vertical junction. The device is made entirely in the transistor active layer, low-loss crystalline silicon, which eliminates the need for a partial etch commonly used to create ridge cavities. In this work, we present the full optical and electrical design of the cavity including rigorous mode solver and FDTD simulations to design the Qlimiting electrical contacts and the coupling/excitation. We address the layout of active photonics within the mask set of a standard advanced CMOS process and show that high-performance photonic devices can be seamlessly monolithically integrated alongside electronics on the same chip. The present designs enable monolithically integrated optoelectronic transceivers on a single advanced CMOS chip, without requiring any process changes, enabling the penetration of photonics into the microprocessor.

Heterogeneously integrated silicon photonics for the mid-infrared and spectroscopic sensing.

PubMed

Chen, Yu; Lin, Hongtao; Hu, Juejun; Li, Mo

2014-07-22

Besides being the foundational material for microelectronics, crystalline silicon has long been used for the production of infrared lenses and mirrors. More recently, silicon has become the key material to achieve large-scale integration of photonic devices for on-chip optical interconnect and signal processing. For optics, silicon has significant advantages: it offers a very high refractive index and is highly transparent in the spectral range from 1.2 to 8 μm. To fully exploit silicon’s superior performance in a remarkably broad range and to enable new optoelectronic functionalities, here we describe a general method to integrate silicon photonic devices on arbitrary foreign substrates. In particular, we apply the technique to integrate silicon microring resonators on mid-infrared compatible substrates for operation in the mid-infrared. These high-performance mid-infrared optical resonators are utilized to demonstrate, for the first time, on-chip cavity-enhanced mid-infrared spectroscopic analysis of organic chemicals with a limit of detection of less than 0.1 ng.

Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

NASA Astrophysics Data System (ADS)

Younis, Adnan; Chu, Dewei; Li, Sean

2015-09-01

Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective.

Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

PubMed Central

Younis, Adnan; Chu, Dewei; Li, Sean

2015-01-01

Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective. PMID:26324073

Handheld ultrasound array imaging device

NASA Astrophysics Data System (ADS)

Hwang, Juin-Jet; Quistgaard, Jens

1999-06-01

A handheld ultrasound imaging device, one that weighs less than five pounds, has been developed for diagnosing trauma in the combat battlefield as well as a variety of commercial mobile diagnostic applications. This handheld device consists of four component ASICs, each is designed using the state of the art microelectronics technologies. These ASICs are integrated with a convex array transducer to allow high quality imaging of soft tissues and blood flow in real time. The device is designed to be battery driven or ac powered with built-in image storage and cineloop playback capability. Design methodologies of a handheld device are fundamentally different to those of a cart-based system. As system architecture, signal and image processing algorithm as well as image control circuit and software in this device is deigned suitably for large-scale integration, the image performance of this device is designed to be adequate to the intent applications. To elongate the battery life, low power design rules and power management circuits are incorporated in the design of each component ASIC. The performance of the prototype device is currently being evaluated for various applications such as a primary image screening tool, fetal imaging in Obstetrics, foreign object detection and wound assessment for emergency care, etc.

Design, Fabrication, and Characterization of Carbon Nanotube Field Emission Devices for Advanced Applications

NASA Astrophysics Data System (ADS)

Radauscher, Erich Justin

Carbon nanotubes (CNTs) have recently emerged as promising candidates for electron field emission (FE) cathodes in integrated FE devices. These nanostructured carbon materials possess exceptional properties and their synthesis can be thoroughly controlled. Their integration into advanced electronic devices, including not only FE cathodes, but sensors, energy storage devices, and circuit components, has seen rapid growth in recent years. The results of the studies presented here demonstrate that the CNT field emitter is an excellent candidate for next generation vacuum microelectronics and related electron emission devices in several advanced applications. The work presented in this study addresses determining factors that currently confine the performance and application of CNT-FE devices. Characterization studies and improvements to the FE properties of CNTs, along with Micro-Electro-Mechanical Systems (MEMS) design and fabrication, were utilized in achieving these goals. Important performance limiting parameters, including emitter lifetime and failure from poor substrate adhesion, are examined. The compatibility and integration of CNT emitters with the governing MEMS substrate (i.e., polycrystalline silicon), and its impact on these performance limiting parameters, are reported. CNT growth mechanisms and kinetics were investigated and compared to silicon (100) to improve the design of CNT emitter integrated MEMS based electronic devices, specifically in vacuum microelectronic device (VMD) applications. Improved growth allowed for design and development of novel cold-cathode FE devices utilizing CNT field emitters. A chemical ionization (CI) source based on a CNT-FE electron source was developed and evaluated in a commercial desktop mass spectrometer for explosives trace detection. This work demonstrated the first reported use of a CNT-based ion source capable of collecting CI mass spectra. The CNT-FE source demonstrated low power requirements, pulsing capabilities, and average lifetimes of over 320 hours when operated in constant emission mode under elevated pressures, without sacrificing performance. Additionally, a novel packaged ion source for miniature mass spectrometer applications using CNT emitters, a MEMS based Nier-type geometry, and a Low Temperature Cofired Ceramic (LTCC) 3D scaffold with integrated ion optics were developed and characterized. While previous research has shown other devices capable of collecting ion currents on chip, this LTCC packaged MEMS micro-ion source demonstrated improvements in energy and angular dispersion as well as the ability to direct the ions out of the packaged source and towards a mass analyzer. Simulations and experimental design, fabrication, and characterization were used to make these improvements. Finally, novel CNT-FE devices were developed to investigate their potential to perform as active circuit elements in VMD circuits. Difficulty integrating devices at micron-scales has hindered the use of vacuum electronic devices in integrated circuits, despite the unique advantages they offer in select applications. Using a combination of particle trajectory simulation and experimental characterization, device performance in an integrated platform was investigated. Solutions to the difficulties in operating multiple devices in close proximity and enhancing electron transmission (i.e., reducing grid loss) are explored in detail. A systematic and iterative process was used to develop isolation structures that reduced crosstalk between neighboring devices from 15% on average, to nearly zero. Innovative geometries and a new operational mode reduced grid loss by nearly threefold, thereby improving transmission of the emitted cathode current to the anode from 25% in initial designs to 70% on average. These performance enhancements are important enablers for larger scale integration and for the realization of complex vacuum microelectronic circuits.

Optimization of Microelectronic Devices for Sensor Applications

NASA Technical Reports Server (NTRS)

Cwik, Tom; Klimeck, Gerhard

2000-01-01

The NASA/JPL goal to reduce payload in future space missions while increasing mission capability demands miniaturization of active and passive sensors, analytical instruments and communication systems among others. Currently, typical system requirements include the detection of particular spectral lines, associated data processing, and communication of the acquired data to other systems. Advances in lithography and deposition methods result in more advanced devices for space application, while the sub-micron resolution currently available opens a vast design space. Though an experimental exploration of this widening design space-searching for optimized performance by repeated fabrication efforts-is unfeasible, it does motivate the development of reliable software design tools. These tools necessitate models based on fundamental physics and mathematics of the device to accurately model effects such as diffraction and scattering in opto-electronic devices, or bandstructure and scattering in heterostructure devices. The software tools must have convenient turn-around times and interfaces that allow effective usage. The first issue is addressed by the application of high-performance computers and the second by the development of graphical user interfaces driven by properly developed data structures. These tools can then be integrated into an optimization environment, and with the available memory capacity and computational speed of high performance parallel platforms, simulation of optimized components can proceed. In this paper, specific applications of the electromagnetic modeling of infrared filtering, as well as heterostructure device design will be presented using genetic algorithm global optimization methods.

Genetically Engineered Microelectronic Infrared Filters

NASA Technical Reports Server (NTRS)

Cwik, Tom; Klimeck, Gerhard

1998-01-01

A genetic algorithm is used for design of infrared filters and in the understanding of the material structure of a resonant tunneling diode. These two components are examples of microdevices and nanodevices that can be numerically simulated using fundamental mathematical and physical models. Because the number of parameters that can be used in the design of one of these devices is large, and because experimental exploration of the design space is unfeasible, reliable software models integrated with global optimization methods are examined The genetic algorithm and engineering design codes have been implemented on massively parallel computers to exploit their high performance. Design results are presented for the infrared filter showing new and optimized device design. Results for nanodevices are presented in a companion paper at this workshop.

Hydrogen ion microlithography

DOEpatents

Tsuo, Y.S.; Deb, S.K.

1990-10-02

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing. 6 figs.

Linear and passive silicon diodes, isolators, and logic gates

NASA Astrophysics Data System (ADS)

Li, Zhi-Yuan

2013-12-01

Silicon photonic integrated devices and circuits have offered a promising means to revolutionalize information processing and computing technologies. One important reason is that these devices are compatible with conventional complementary metal oxide semiconductor (CMOS) processing technology that overwhelms current microelectronics industry. Yet, the dream to build optical computers has yet to come without the breakthrough of several key elements including optical diodes, isolators, and logic gates with low power, high signal contrast, and large bandwidth. Photonic crystal has a great power to mold the flow of light in micrometer/nanometer scale and is a promising platform for optical integration. In this paper we present our recent efforts of design, fabrication, and characterization of ultracompact, linear, passive on-chip optical diodes, isolators and logic gates based on silicon two-dimensional photonic crystal slabs. Both simulation and experiment results show high performance of these novel designed devices. These linear and passive silicon devices have the unique properties of small fingerprint, low power request, large bandwidth, fast response speed, easy for fabrication, and being compatible with COMS technology. Further improving their performance would open up a road towards photonic logics and optical computing and help to construct nanophotonic on-chip processor architectures for future optical computers.

IEEE WMED 2016 Homepage

Science.gov Websites

characterization, design, and new device technologies. This workshop will consist of invited talks, contributed and Reliability Semiconductor package reliability, Design for Manufacturability, Stacked die packaging and Novel assembly processes Microelectronic Circuit Design New product design, high-speed and/or low

Managing the Manpower Aspects of Applying Micro-Electronics Technology.

ERIC Educational Resources Information Center

Thornton, P.; Routledge, C.

1980-01-01

Outlines major effects that the application of micro-electronics devices in products/processes and in office systems will have on future manpower and skill requirements in manufacturing organizations. Identifies the type of problems these changes will pose for manpower managers. Provides general guidelines for the successful management of these…

Symmetric miniaturized heating system for active microelectronic devices.

PubMed

McCracken, Michael; Mayer, Michael; Jourard, Isaac; Moon, Jeong-Tak; Persic, John

2010-07-01

To qualify interconnect technologies such as microelectronic fine wire bonds for mass production of integrated circuit (IC) packages, it is necessary to perform accelerated aging tests, e.g., to age a device at an elevated temperature or to subject the device to thermal cycling and measure the decrease of interconnect quality. There are downsides to using conventional ovens for this as they are relatively large and have relatively slow temperature change rates, and if electrical connections are required between monitoring equipment and the device being heated, they must be located inside the oven and may be aged by the high temperatures. Addressing these downsides, a miniaturized heating system (minioven) is presented, which can heat individual IC packages containing the interconnects to be tested. The core of this system is a piece of copper cut from a square shaped tube with high resistance heating wire looped around it. Ceramic dual in-line packages are clamped against either open end of the core. One package contains a Pt100 temperature sensor and the other package contains the device to be aged placed in symmetry to the temperature sensor. According to the temperature detected by the Pt100, a proportional-integral-derivative controller adjusts the power supplied to the heating wire. The system maintains a dynamic temperature balance with the core hot and the two symmetric sides with electrical connections to the device under test at a cooler temperature. Only the face of the package containing the device is heated, while the socket holding it remains below 75 degrees C when the oven operates at 200 degrees C. The minioven can heat packages from room temperature up to 200 degrees C in less than 5 min and maintain this temperature at 28 W power. During long term aging, a temperature of 200 degrees C was maintained for 1120 h with negligible resistance change of the heating wires after 900 h (heating wire resistance increased 0.2% over the final 220 h). The device is also subjected to 5700 thermal cycles between 55 and 195 degrees C, demonstrating reliability under thermal cycling.

Poly-silicon TFT AM-OLED on thin flexible metal substrates

NASA Astrophysics Data System (ADS)

Afentakis, Themis; Hatalis, Miltiadis K.; Voutsas, Apostolos T.; Hartzell, John W.

2003-05-01

Thin metal foils present an excellent alternative to polymers for the fabrication of large area, flexible displays. Their main advantage spurs from their ability to withstand higher temperatures during processing; microelectronic fabrication at elevated temperatures offers the ability to utilize a variety of crystallization processes for the active layer of devices and thermally grown gate dielectrics. This can lead to high performance (high mobility, low threshold voltage) low cost and highly reliable thin film transistors. In some cases, the conductive substrate can also be used to provide power to the active devices, thus reducing layout complexity. This paper discusses the first successful attempt to design and fabricate a variety of active matrix organic light emitting diode displays on thin, flexible stainless steel foils. Different pixel architectures, such as two- and four-transistor implementations, and addressing modes, such as voltage- or current-driven schemese are examined. This work clearly demonstrates the advantages associated with the fabrication of OLED displays on thin metal foils, which - through roll-to-roll processing - can potentially result in revolutionizing today's display processing, leading to a new generation of low cost, high performance versatile display systems.

Microengineering of magnetic bearings and actuators

NASA Astrophysics Data System (ADS)

Ghantasala, Muralihar K.; Qin, LiJiang; Sood, Dinesh K.; Zmood, Ronald B.

2000-06-01

Microengineering has evolved in the last decade as a subject of its own with the current research encompassing every possible area of devices from electromagnetic to optical and bio-micro electromechanical systems (MEMS). The primary advantage of the micro system technology is its small size, potential to produce high volume and low cost devices. However, the major impediments in the successful realization of many micro devices in practice are the reliability, packaging and integration with the existing microelectronics technology. Microengineering of actuators has recently grown tremendously due to its possible applicability to a wide range of devices of practical importance and the availability of a choice of materials. Selection of materials has been one of the important aspects of the design and fabrication of many micro system and actuators. This paper discusses the issues related to the selection of materials and subsequently their effect on the performance of the actuator. These will be discussed taking micro magnetic actuators and bearings, in particular, as examples. Fabrication and processing strategies and performance evaluation methods adopted will be described. Current status of the technology and projected futuristic applications in this area will be reviewed.

Image analysis for microelectronic retinal prosthesis.

PubMed

Hallum, L E; Cloherty, S L; Lovell, N H

2008-01-01

By way of extracellular, stimulating electrodes, a microelectronic retinal prosthesis aims to render discrete, luminous spots-so-called phosphenes-in the visual field, thereby providing a phosphene image (PI) as a rudimentary remediation of profound blindness. As part thereof, a digital camera, or some other photosensitive array, captures frames, frames are analyzed, and phosphenes are actuated accordingly by way of modulated charge injections. Here, we present a method that allows the assessment of image analysis schemes for integration with a prosthetic device, that is, the means of converting the captured image (high resolution) to modulated charge injections (low resolution). We use the mutual-information function to quantify the amount of information conveyed to the PI observer (device implantee), while accounting for the statistics of visual stimuli. We demonstrate an effective scheme involving overlapping, Gaussian kernels, and discuss extensions of the method to account for shortterm visual memory in observers, and their perceptual errors of omission and commission.

Microelectronic electroporation array

NASA Astrophysics Data System (ADS)

Johnson, Lee J.; Shaffer, Kara J.; Skeath, Perry; Perkins, Frank K.; Pancrazio, Joseph; Scribner, Dean

2004-06-01

Gene Array technology has allowed for the study of gene binding by creating thousands of potential binding sites on a single device. A limitation of the current technology is that the effects of the gene and the gene-derived proteins cannot be studied in situ the same way, thousand site cell arrays are not readily available. We propose a new device structure to study the effects of gene modification on cells. This new array technology uses electroporation to target specific areas within a cell culture for transfection of genes. Electroporation arrays will allow high throughput analysis of gene effects on a given cell's response to a stress or a genes ability to restore normal cell function in disease modeling cells. Fluorescent imaging of dye labeled indicator molecules or cell viability will provide results indicating the most effective genes. The electroporation array consists of a microelectronic circuit, ancillary electronics, protecting electrode surface for cell culturing and a perfusion system for gene or drug delivery. The advantages of the current device are that there are 3200 sites for electroporation, all or any subsets of the electrodes can be activated. The cells are held in place by the electrode material. This technology could also be applied to high throughput screening of cell impermeant drugs.

Highly photoresponsive and wavelength-selective circularly-polarized-light detector based on metal-oxides hetero-chiral thin film.

PubMed

Lee, Seung Hee; Singh, Dhruv Pratap; Sung, Ji Ho; Jo, Moon-Ho; Kwon, Ki Chang; Kim, Soo Young; Jang, Ho Won; Kim, Jong Kyu

2016-01-22

A highly efficient circularly-polarized-light detector with excellent wavelength selectivity is demonstrated with an elegant and simple microelectronics-compatible way. The circularly-polarized-light detector based on a proper combination of the geometry-controlled TiO2-SnO2 hetero-chiral thin film as an effective chiroptical filter and the Si active layer shows excellent chiroptical response with external quantum efficiency as high as 30% and high helicity selectivity of ~15.8% in an intended wavelength range. Furthermore, we demonstrated the ability of manipulating both bandwidth and responsivity of the detector simultaneously in whole visible wavelength range by a precise control over the geometry and materials constituting hetero-chiral thin film. The high efficiency, wavelength selectivity and compatibility with conventional microelectronics processes enabled by the proposed device can result in remarkable developments in highly integrated photonic platforms utilizing chiroptical responses.

Highly photoresponsive and wavelength-selective circularly-polarized-light detector based on metal-oxides hetero-chiral thin film

PubMed Central

Lee, Seung Hee; Singh, Dhruv Pratap; Sung, Ji Ho; Jo, Moon-Ho; Kwon, Ki Chang; Kim, Soo Young; Jang, Ho Won; Kim, Jong Kyu

2016-01-01

A highly efficient circularly-polarized-light detector with excellent wavelength selectivity is demonstrated with an elegant and simple microelectronics-compatible way. The circularly-polarized-light detector based on a proper combination of the geometry-controlled TiO2-SnO2 hetero-chiral thin film as an effective chiroptical filter and the Si active layer shows excellent chiroptical response with external quantum efficiency as high as 30% and high helicity selectivity of ~15.8% in an intended wavelength range. Furthermore, we demonstrated the ability of manipulating both bandwidth and responsivity of the detector simultaneously in whole visible wavelength range by a precise control over the geometry and materials constituting hetero-chiral thin film. The high efficiency, wavelength selectivity and compatibility with conventional microelectronics processes enabled by the proposed device can result in remarkable developments in highly integrated photonic platforms utilizing chiroptical responses. PMID:26795601

Highly photoresponsive and wavelength-selective circularly-polarized-light detector based on metal-oxides hetero-chiral thin film

NASA Astrophysics Data System (ADS)

Lee, Seung Hee; Singh, Dhruv Pratap; Sung, Ji Ho; Jo, Moon-Ho; Kwon, Ki Chang; Kim, Soo Young; Jang, Ho Won; Kim, Jong Kyu

2016-01-01

A highly efficient circularly-polarized-light detector with excellent wavelength selectivity is demonstrated with an elegant and simple microelectronics-compatible way. The circularly-polarized-light detector based on a proper combination of the geometry-controlled TiO2-SnO2 hetero-chiral thin film as an effective chiroptical filter and the Si active layer shows excellent chiroptical response with external quantum efficiency as high as 30% and high helicity selectivity of ~15.8% in an intended wavelength range. Furthermore, we demonstrated the ability of manipulating both bandwidth and responsivity of the detector simultaneously in whole visible wavelength range by a precise control over the geometry and materials constituting hetero-chiral thin film. The high efficiency, wavelength selectivity and compatibility with conventional microelectronics processes enabled by the proposed device can result in remarkable developments in highly integrated photonic platforms utilizing chiroptical responses.

Complex VLSI Feature Comparison for Commercial Microelectronics Verification

DTIC Science & Technology

2014-03-27

69 4.2.4 Circuit E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74 4.3 Summary...used for high-performance consumer microelectronics. Volume is a significant factor in constraining the technology limit for defense circuits, but it...surveyed in a 2010 Department of Commerce report found counterfeit chips difficult to identify due to improved fabrication quality in overseas counterfeit

Center for space microelectronics technology

NASA Technical Reports Server (NTRS)

1993-01-01

The 1992 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center during the past year. The report lists 187 publications, 253 presentations, and 111 new technology reports and patents in the areas of solid-state devices, photonics, advanced computing, and custom microcircuits.

A Distributed Amplifier System for Bilayer Lipid Membrane (BLM) Arrays With Noise and Individual Offset Cancellation.

PubMed

Crescentini, Marco; Thei, Frederico; Bennati, Marco; Saha, Shimul; de Planque, Maurits R R; Morgan, Hywel; Tartagni, Marco

2015-06-01

Lipid bilayer membrane (BLM) arrays are required for high throughput analysis, for example drug screening or advanced DNA sequencing. Complex microfluidic devices are being developed but these are restricted in terms of array size and structure or have integrated electronic sensing with limited noise performance. We present a compact and scalable multichannel electrophysiology platform based on a hybrid approach that combines integrated state-of-the-art microelectronics with low-cost disposable fluidics providing a platform for high-quality parallel single ion channel recording. Specifically, we have developed a new integrated circuit amplifier based on a novel noise cancellation scheme that eliminates flicker noise derived from devices under test and amplifiers. The system is demonstrated through the simultaneous recording of ion channel activity from eight bilayer membranes. The platform is scalable and could be extended to much larger array sizes, limited only by electronic data decimation and communication capabilities.

Design and analysis of a high Q MEMS passive RF filter

NASA Astrophysics Data System (ADS)

Rathee, Vishal; Pande, Rajesh

2016-04-01

Over the past few years, significant growth has been observed in using MEMS based passive components in the RF microelectronics domain, especially in transceiver system. This is due to some excellent properties of the MEMS devices like low loss, low cost and excellent isolation. This paper presents a design of high performance MEMS passive band pass filter, consisting of L and C with improved quality factor and insertion loss less than the reported filters. In this paper we have presented a design of 2nd order band pass filter with 2.4GHz centre frequency and 83MHz bandwidth for Bluetooth application. The simulation results showed improved Q-factor of 34 and Insertion loss of 1.7dB to 1.9dB. The simulation results needs to be validated by fabricating the device, fabrication flow of which is also presented in the paper.

Fighting blindness with microelectronics.

PubMed

Zrenner, Eberhart

2013-11-06

There is no approved cure for blindness caused by degeneration of the photoreceptor cells of the retina. However, there has been encouraging progress with attempts to restore vision using microelectronic retinal implant devices. Yet many questions remain to be addressed. Where is the best location to implant multielectrode arrays? How can spatial and temporal resolution be improved? What are the best ways to ensure the safety and longevity of these devices? Will color vision be possible? This Perspective discusses the current state of the art of retinal implants and attempts to address some of the outstanding questions.

A novel three-jet microreactor for localized metal-organic chemical vapour deposition of gallium arsenide: design and simulation

NASA Astrophysics Data System (ADS)

Konakov, S. A.; Krzhizhanovskaya, V. V.

2016-08-01

We present a novel three-jet microreactor design for localized deposition of gallium arsenide (GaAs) by low-pressure Metal-Organic Chemical Vapour Deposition (MOCVD) for semiconductor devices, microelectronics and solar cells. Our approach is advantageous compared to the standard lithography and etching technology, since it preserves the nanostructure of the deposited material, it is less time-consuming and less expensive. We designed two versions of reactor geometry with a 10-micron central microchannel for precursor supply and with two side jets of a dilutant to control the deposition area. To aid future experiments, we performed computational modeling of a simplified-geometry (twodimensional axisymmetric) microreactor, based on Navier-Stokes equations for a laminar flow of chemically reacting gas mixture of Ga(CH3)3-AsH3-H2. Simulation results show that we can achieve a high-rate deposition (over 0.3 μm/min) on a small area (less than 30 μm diameter). This technology can be used in material production for microelectronics, optoelectronics, photovoltaics, solar cells, etc.

Nucleation and atomic layer reaction in nickel silicide for defect-engineered Si nanochannels.

PubMed

Tang, Wei; Picraux, S Tom; Huang, Jian Yu; Gusak, Andriy M; Tu, King-Ning; Dayeh, Shadi A

2013-06-12

At the nanoscale, defects can significantly impact phase transformation processes and change materials properties. The material nickel silicide has been the industry standard electrical contact of silicon microelectronics for decades and is a rich platform for scientific innovation at the conjunction of materials and electronics. Its formation in nanoscale silicon devices that employ high levels of strain, intentional, and unintentional twins or grain boundaries can be dramatically different from the commonly conceived bulk processes. Here, using in situ high-resolution transmission electron microscopy (HRTEM), we capture single events during heterogeneous nucleation and atomic layer reaction of nickel silicide at various crystalline boundaries in Si nanochannels for the first time. We show through systematic experiments and analytical modeling that unlike other typical face-centered cubic materials such as copper or silicon the twin defects in NiSi2 have high interfacial energies. We observe that these twin defects dramatically change the behavior of new phase nucleation and can have direct implications for ultrascaled devices that are prone to defects or may utilize them to improve device performance.

Job stress models, depressive disorders and work performance of engineers in microelectronics industry.

PubMed

Chen, Sung-Wei; Wang, Po-Chuan; Hsin, Ping-Lung; Oates, Anthony; Sun, I-Wen; Liu, Shen-Ing

2011-01-01

Microelectronic engineers are considered valuable human capital contributing significantly toward economic development, but they may encounter stressful work conditions in the context of a globalized industry. The study aims at identifying risk factors of depressive disorders primarily based on job stress models, the Demand-Control-Support and Effort-Reward Imbalance models, and at evaluating whether depressive disorders impair work performance in microelectronics engineers in Taiwan. The case-control study was conducted among 678 microelectronics engineers, 452 controls and 226 cases with depressive disorders which were defined by a score 17 or more on the Beck Depression Inventory and a psychiatrist's diagnosis. The self-administered questionnaires included the Job Content Questionnaire, Effort-Reward Imbalance Questionnaire, demography, psychosocial factors, health behaviors and work performance. Hierarchical logistic regression was applied to identify risk factors of depressive disorders. Multivariate linear regressions were used to determine factors affecting work performance. By hierarchical logistic regression, risk factors of depressive disorders are high demands, low work social support, high effort/reward ratio and low frequency of physical exercise. Combining the two job stress models may have better predictive power for depressive disorders than adopting either model alone. Three multivariate linear regressions provide similar results indicating that depressive disorders are associated with impaired work performance in terms of absence, role limitation and social functioning limitation. The results may provide insight into the applicability of job stress models in a globalized high-tech industry considerably focused in non-Western countries, and the design of workplace preventive strategies for depressive disorders in Asian electronics engineering population.

Breakthrough: micro-electronic photovoltaics

ScienceCinema

Okandan, Murat; Gupta, Vipin

2018-01-16

Sandia developed tiny glitter-sized photovoltaic (PV) cells that could revolutionize solar energy collection. The crystalline silicon micro-PV cells will be cheaper and have greater efficiencies than current PV collectors. Micro-PV cells require relatively little material to form well-controlled, highly efficient devices. Cell fabrication uses common microelectric and micro-electromechanical systems (MEMS) techniques.

Method for anisotropic etching in the manufacture of semiconductor devices

NASA Technical Reports Server (NTRS)

Koontz, Steven L. (Inventor); Cross, Jon B. (Inventor)

1993-01-01

Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by hyperthermal atomic oxygen beams (translational energies of 0.2 to 20 eV, preferably 1 to 10 eV). Etching with hyperthermal oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask protected areas.

Method for anisotropic etching in the manufacture of semiconductor devices

DOEpatents

Koontz, Steven L.; Cross, Jon B.

1993-01-01

Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by atomic oxygen beams (translational energies of 0.2-20 eV, preferably 1-10 eV). Etching with hyperthermal (kinetic energy>1 eV) oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask-protected areas.

Gold-based electrical interconnections for microelectronic devices

DOEpatents

Peterson, Kenneth A.; Garrett, Stephen E.; Reber, Cathleen A.; Watson, Robert D.

2002-01-01

A method of making an electrical interconnection from a microelectronic device to a package, comprising ball or wedge compression bonding a gold-based conductor directly to a silicon surface, such as a polysilicon bonding pad in a MEMS or IMEMS device, without using layers of aluminum or titanium disposed in-between the conductor and the silicon surface. After compression bonding, optional heating of the bond above 363 C. allows formation of a liquid gold-silicon eutectic phase containing approximately 3% (by weight) silicon, which significantly improves the bond strength by reforming and enhancing the initial compression bond. The same process can be used for improving the bond strength of Au--Ge bonds by forming a liquid Au-12Ge eutectic phase.

Thin film microelectronics materials production in the vacuum of space

NASA Astrophysics Data System (ADS)

Ignatiev, A.; Sterling, M.; Horton, C.; Freundlich, A.; Pei, S.; Hill, R.

1997-01-01

The international Space Station era will open up a new dimension in the use of one of the unique attributes of space, vacuum, for the production of advanced semiconductor materials and devices for microelectronics applications. Ultra-vacuum is required for the fabrication in thin film form of high quality semiconductors. This can be accomplished behind a free flying platform similar to the current Wake Shield Facility which is specifically designed to support in-space production. The platform will require apparatus for thin film growth, a robotics interface to allow for the change out of raw materials and the harvesting of finished product, and a servicing plant incorporating Space Station that will support long-term utilization of the platform.

Room-temperature semiconductor heterostructure refrigeration

NASA Astrophysics Data System (ADS)

Chao, K. A.; Larsson, Magnus; Mal'shukov, A. G.

2005-07-01

With the proper design of semiconductor tunneling barrier structures, we can inject low-energy electrons via resonant tunneling, and take out high-energy electrons via a thermionic process. This is the operation principle of our semiconductor heterostructure refrigerator (SHR) without the need of applying a temperature gradient across the device. Even for the bad thermoelectric material AlGaAs, our calculation shows that at room temperature, the SHR can easily lower the temperature by 5-7K. Such devices can be fabricated with the present semiconductor technology. Besides its use as a kitchen refrigerator, the SHR can efficiently cool microelectronic devices.

TID Effects of High-Z Material Spot Shields on FPGA Using MPTB Data

NASA Technical Reports Server (NTRS)

Hardage, Donna (Technical Monitor); Crain, S. H.; Mazur, J. E.; Looper, M. D.

2003-01-01

An experiment on the Microelectronics and Photonics Test Bed (MPTB) was testing lield programmable gate arrays using spot shields to extend the life of some of the devices being tested. It was expected that the unshielded parts would fail from a total ionizing dose (TID) and yet the opposite occurred. The data show that the devices failing from the TID effects are those with the spot shields attached. This effort is to determine the mechanism by which the environment is interacting with the high-Z material to enhance the TID in these field programmable gate arrays.

Vacuum Microelectronic Field Emission Array Devices for Microwave Amplification.

NASA Astrophysics Data System (ADS)

Mancusi, Joseph Edward

This dissertation presents the design, analysis, and measurement of vacuum microelectronic devices which use field emission to extract an electron current from arrays of silicon cones. The arrays of regularly-spaced silicon cones, the field emission cathodes or emitters, are fabricated with an integrated gate electrode which controls the electric field at the tip of the cone, and thus the electron current. An anode or collector electrode is placed above the array to collect the emission current. These arrays, which are fabricated in a standard silicon processing facility, are developed for use as high power microwave amplifiers. Field emission has been studied extensively since it was first characterized in 1928, however due to the large electric fields required practical field emission devices are difficult to make. With the development of the semiconductor industry came the development of fabrication equipment and techniques which allow for the manufacture of the precision micron-scale structures necessary for practical field emission devices. The active region of a field emission device is a vacuum, therefore the electron travel is ballistic. This analysis of field emission devices includes electric field and electron emission modeling, development of a device equivalent circuit, analysis of the parameters in the equivalent circuit, and device testing. Variations in device structure are taken into account using a statistical model based upon device measurements. Measurements of silicon field emitter arrays at DC and RF are presented and analyzed. In this dissertation, the equivalent circuit is developed from the analysis of the device structure. The circuit parameters are calculated from geometrical considerations and material properties, or are determined from device measurements. It is necessary to include the emitter resistance in the equivalent circuit model since relatively high resistivity silicon wafers are used. As is demonstrated, the circuit model accurately predicts the magnitude of the emission current at a number of typical bias current levels when the device is operating at frequencies within the range of 10 MHz to 1 GHz. At low frequencies and at high frequencies within this range, certain parameters are negligible, and simplifications may be made in the equivalent circuit model.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Albert G. Baca; Edwin J. Heller; Gregory C. Frye-Mason

High sensitivity acoustic wave chemical microsensors are being developed on GaAs substrates. These devices take advantage of the piezoelectric properties of GaAs as well as its mature microelectronics fabrication technology and nascent micromachining technology. The design, fabrication, and response of GaAs SAW chemical microsensors are reported. Functional integrated GaAs SAW oscillators, suitable for chemical sensing, have been produced. The integrated oscillator requires 20 mA at 3 VK, operates at frequencies up to 500 MHz, and occupies approximately 2 mmz. Discrete GaAs sensor components, including IC amplifiers, SAW delay lines, and IC phase comparators have been fabricated and tested. A temperaturemore » compensation scheme has been developed that overcomes the large temperature dependence of GaAs acoustic wave devices. Packaging issues related to bonding miniature flow channels directly to the GaAs substrates have been resolved. Micromachining techniques for fabricating FPW and TSM microsensors on thin GaAs membranes are presented and GaAs FPW delay line performance is described. These devices have potentially higher sensitivity than existing GaAs and quartz SAW sensors.« less

Planar Fully-Depleted-Silicon-On-Insulator technologies: Toward the 28 nm node and beyond

NASA Astrophysics Data System (ADS)

Doris, B.; DeSalvo, B.; Cheng, K.; Morin, P.; Vinet, M.

2016-03-01

This paper presents a comprehensive overview of the research done in the last decade on planar Fully-Depleted-Silicon-On-Insulator (FDSOI) technologies in the frame of the joint development program between IBM, ST Microelectronics and CEA-LETI. In particular, we review the technological developments ranging from substrate engineering to process modules that enable functionality and improve FDSOI performance over several generations. Various multi Vt integration schemes to maximize the benefits of the thin BOX FDSOI platform are discussed. Manufacturability as well as scalability concerns are highlighted and addressed. In addition, this work provides understanding of the performance/power trade-offs for FDSOI circuits and device variability. Finally, clear directions for future application-specific products are given, demonstrating that FDSOI is an attractive CMOS option for next generation high performance and low-power applications.

Ultrafast and sensitive photodetector based on a PtSe2/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550 nm

NASA Astrophysics Data System (ADS)

Zeng, Longhui; Lin, Shenghuang; Lou, Zhenhua; Yuan, Huiyu; Long, Hui; Li, Yanyong; Lu, Wei; Lau, Shu Ping; Wu, Di; Tsang, Yuen Hong

2018-04-01

The newly discovered Group-10 transition metal dichalcogenides (TMDs) like PtSe2 have promising applications in high-performance microelectronic and optoelectronic devices due to their high carrier mobilities, widely tunable bandages and ultrastabilities. However, the optoelectronic performance of broadband PtSe2 photodetectors integrated with silicon remains undiscovered. Here, we report the successful preparation of large-scale, uniform and vertically grown PtSe2 films by simple selenization method for the design of a PtSe2/Si nanowire array heterostructure, which exhibited a very good photoresponsivity of 12.65 A/W, a high specific detectivity of 2.5 × 1013 Jones at -5 V and fast rise/fall times of 10.1/19.5 μs at 10 kHz without degradation while being capable of responding to high frequencies of up to 120 kHz. Our work has demonstrated the compatibility of PtSe2 with the existing silicon technology and ultrabroad band detection ranging from deep ultraviolet to optical telecommunication wavelengths, which can largely cover the limitations of silicon detectors. Further investigation of the device revealed pronounced photovoltaic behavior at 0 V, making it capable of operating as a self-powered photodetector. Overall, this representative PtSe2/Si nanowire array-based photodetector offers great potential for applications in next-generation optoelectronic and electronic devices.

Eye vision system using programmable micro-optics and micro-electronics

NASA Astrophysics Data System (ADS)

Riza, Nabeel A.; Amin, M. Junaid; Riza, Mehdi N.

2014-02-01

Proposed is a novel eye vision system that combines the use of advanced micro-optic and microelectronic technologies that includes programmable micro-optic devices, pico-projectors, Radio Frequency (RF) and optical wireless communication and control links, energy harvesting and storage devices and remote wireless energy transfer capabilities. This portable light weight system can measure eye refractive powers, optimize light conditions for the eye under test, conduct color-blindness tests, and implement eye strain relief and eye muscle exercises via time sequenced imaging. Described is the basic design of the proposed system and its first stage system experimental results for vision spherical lens refractive error correction.

Terrestrial Sources of X-Ray Radiation and Their Effects on NASA Flight Hardware

NASA Technical Reports Server (NTRS)

Kniffin, Scott

2016-01-01

X-rays are an energetic and penetrating form of ionizing electromagnetic radiation, which can degrade NASA flight hardware. The main concern posed by such radiation is degradation of active electronic devices and, in some cases, diodes. Non-electronic components are only damaged at doses that far exceed the point where any electronic device would be destroyed. For the purposes of this document, flight hardware can be taken to mean an entire instrument, the flight electronics within the instrument or the individual microelectronic devices in the flight electronics. This document will discuss and describe the ways in which NASA flight hardware might be exposed to x-rays, what is and isn't a concern, and how to tell the difference. First, we must understand what components in flight hardware may be vulnerable to degradation or failure as a result of being exposed to ionizing radiation, such as x-rays. As stated above, bulk materials (structural metals, plastics, etc.) are generally only affected by ionizing radiation at very high dose levels. Likewise, passive electronic components (e.g. resistors, capacitors, most diodes) are strongly resistant to exposure to x-rays, except at very high doses. The main concerns arise when active components, that is, components like discrete transistors and microelectronic devices, are exposed to ionizing radiation. Active components are designed to respond to minute changes in currents and voltages in the circuit. As such, it is not surprising that exposure to ionizing radiation, which creates ionized and therefore electrically active particles, may degrade the way the hardware performs. For the most part, the mechanism for this degradation is trapping of the charges generated by ionizing radiation by defects in dielectric materials in the hardware. As such, the degree of damage is a function of both the quantity of ionizing radiation exposure and the physical characteristics of the hardware itself. The metric that describes the level of exposure to ionizing radiation is total ionizing dose (TID). The unit of TID is the rad, which is defined as 100 ergs absorbed per gram of material. Dose can be expressed in other units, for example grays (gy), where 1 gy = 100 rads. The actual fluence of radiation needed to deliver a rad depends on the absorbing material, so units of dose are usually stated in reference to the material of interest. That is, for microelectronic devices, the unit of dose is generally rad (Si) or rad (SiO2). However, the definition of absorbed dose in this fashion has the advantage that the type of radiation causing the ionization can be normalized so that a realistic and adequate comparison can be made. The sensitivity of microelectronic parts to TID varies over many orders of magnitude. (Note: Doses to humans are typically expressed in rems-or roentgen-equivalent-man-which measures tissue damage, and depends on the type of radiation, as well as the dose in rads.) Thus far, the "softest" parts tested at NASA showed damage at 500 rads (Si), while parts that are radiation-hardened by design can remain functional to doses on the order of 107 rads (Si). This broad range of sensitivity highlights one of the most important considerations when considering the effects of radiation on electronic parts: In order to determine whether a radiation exposure is a concern for a particular part, one must understand the technologies used in the part and their vulnerabilities to TID damage. A NASA radiation expert should be consulted to obtain such information.

Inkjet printing of single-crystal films.

PubMed

Minemawari, Hiromi; Yamada, Toshikazu; Matsui, Hiroyuki; Tsutsumi, Jun'ya; Haas, Simon; Chiba, Ryosuke; Kumai, Reiji; Hasegawa, Tatsuo

2011-07-13

The use of single crystals has been fundamental to the development of semiconductor microelectronics and solid-state science. Whether based on inorganic or organic materials, the devices that show the highest performance rely on single-crystal interfaces, with their nearly perfect translational symmetry and exceptionally high chemical purity. Attention has recently been focused on developing simple ways of producing electronic devices by means of printing technologies. 'Printed electronics' is being explored for the manufacture of large-area and flexible electronic devices by the patterned application of functional inks containing soluble or dispersed semiconducting materials. However, because of the strong self-organizing tendency of the deposited materials, the production of semiconducting thin films of high crystallinity (indispensable for realizing high carrier mobility) may be incompatible with conventional printing processes. Here we develop a method that combines the technique of antisolvent crystallization with inkjet printing to produce organic semiconducting thin films of high crystallinity. Specifically, we show that mixing fine droplets of an antisolvent and a solution of an active semiconducting component within a confined area on an amorphous substrate can trigger the controlled formation of exceptionally uniform single-crystal or polycrystalline thin films that grow at the liquid-air interfaces. Using this approach, we have printed single crystals of the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C(8)-BTBT) (ref. 15), yielding thin-film transistors with average carrier mobilities as high as 16.4 cm(2) V(-1) s(-1). This printing technique constitutes a major step towards the use of high-performance single-crystal semiconductor devices for large-area and flexible electronics applications.

Low-power resistive random access memory by confining the formation of conducting filaments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Yi-Jen; Lee, Si-Chen, E-mail: sclee@ntu.edu.tw; Shen, Tzu-Hsien

2016-06-15

Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics. In this study, a new resistive switching material structure, TiO{sub x}/silver nanoparticles/TiO{sub x}/AlTiO{sub x}, fabricated between the fluorine-doped tin oxide bottom electrode and the indium tin oxide top electrode is demonstrated. The device exhibits excellent memory performances, such as low operation voltage (<±1 V), low operation power, small variation in resistance, reliable data retention, and a large memory window. The current-voltage measurement shows that the conducting mechanism in the device at the high resistancemore » state is via electron hopping between oxygen vacancies in the resistive switching material. When the device is switched to the low resistance state, conducting filaments are formed in the resistive switching material as a result of accumulation of oxygen vacancies. The bottom AlTiO{sub x} layer in the device structure limits the formation of conducting filaments; therefore, the current and power consumption of device operation are significantly reduced.« less

An Implantable Neural Sensing Microsystem with Fiber-Optic Data Transmission and Power Delivery

PubMed Central

Park, Sunmee; Borton, David A.; Kang, Mingyu; Nurmikko, Arto V.; Song, Yoon-Kyu

2013-01-01

We have developed a prototype cortical neural sensing microsystem for brain implantable neuroengineering applications. Its key feature is that both the transmission of broadband, multichannel neural data and power required for the embedded microelectronics are provided by optical fiber access. The fiber-optic system is aimed at enabling neural recording from rodents and primates by converting cortical signals to a digital stream of infrared light pulses. In the full microsystem whose performance is summarized in this paper, an analog-to-digital converter and a low power digital controller IC have been integrated with a low threshold, semiconductor laser to extract the digitized neural signals optically from the implantable unit. The microsystem also acquires electrical power and synchronization clocks via optical fibers from an external laser by using a highly efficient photovoltaic cell on board. The implantable unit employs a flexible polymer substrate to integrate analog and digital microelectronics and on-chip optoelectronic components, while adapting to the anatomical and physiological constraints of the environment. A low power analog CMOS chip, which includes preamplifier and multiplexing circuitry, is directly flip-chip bonded to the microelectrode array to form the cortical neurosensor device. PMID:23666130

MEMS in Space Systems

NASA Technical Reports Server (NTRS)

Lyke, J. C.; Michalicek, M. A.; Singaraju, B. K.

1995-01-01

Micro-electro-mechanical systems (MEMS) provide an emerging technology that has the potential for revolutionizing the way space systems are designed, assembled, and tested. The high launch costs of current space systems are a major determining factor in the amount of functionality that can be integrated in a typical space system. MEMS devices have the ability to increase the functionality of selected satellite subsystems while simultaneously decreasing spacecraft weight. The Air Force Phillips Laboratory (PL) is supporting the development of a variety of MEMS related technologies as one of several methods to reduce the weight of space systems and increase their performance. MEMS research is a natural extension of PL research objectives in micro-electronics and advanced packaging. Examples of applications that are under research include on-chip micro-coolers, micro-gyroscopes, vibration sensors, and three-dimensional packaging technologies to integrate electronics with MEMS devices. The first on-orbit space flight demonstration of these and other technologies is scheduled for next year.

Porous Diblock Copolymer Thin Films in High-Performance Semiconductor Microelectronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Black, C.T.

2011-02-01

The engine fueling more than 40 years of performance improvements in semiconductor integrated circuits (ICs) has been industry's ability to pattern circuit elements at ever-higher resolution and with ever-greater precision. Steady advances in photolithography - the process wherein ultraviolet light chemically changes a photosensitive polymer resist material in order to create a latent image - have resulted in scaling of minimum printed feature sizes from tens of microns during the 1980s to sub-50 nanometer transistor gate lengths in today's state-of-the-art ICs. The history of semiconductor technology scaling as well as future technology requirements is documented in the International Technology Roadmapmore » for Semiconductors (ITRS). The progression of the semiconductor industry to the realm of nanometer-scale sizes has brought enormous challenges to device and circuit fabrication, rendering performance improvements by conventional scaling alone increasingly difficult. Most often this discussion is couched in terms of field effect transistor (FET) feature sizes such as the gate length or gate oxide thickness, however these challenges extend to many other aspects of the IC, including interconnect dimensions and pitch, device packing density, power consumption, and heat dissipation. The ITRS Technology Roadmap forecasts a difficult set of scientific and engineering challenges with no presently-known solutions. The primary focus of this chapter is the research performed at IBM on diblock copolymer films composed of polystyrene (PS) and poly(methyl-methacrylate) (PMMA) (PS-b-PMMA) with total molecular weights M{sub n} in the range of {approx}60K (g/mol) and polydispersities (PD) of {approx}1.1. These materials self assemble to form patterns having feature sizes in the range of 15-20nm. PS-b-PMMA was selected as a self-assembling patterning material due to its compatibility with the semiconductor microelectronics manufacturing infrastructure, as well as the significant body of existing research on understanding its material properties.« less

Semiconductor Metal-Organic Frameworks: Future Low-Bandgap Materials.

PubMed

Usman, Muhammad; Mendiratta, Shruti; Lu, Kuang-Lieh

2017-02-01

Metal-organic frameworks (MOFs) with low density, high porosity, and easy tunability of functionality and structural properties, represent potential candidates for use as semiconductor materials. The rapid development of the semiconductor industry and the continuous miniaturization of feature sizes of integrated circuits toward the nanometer (nm) scale require novel semiconductor materials instead of traditional materials like silicon, germanium, and gallium arsenide etc. MOFs with advantageous properties of both the inorganic and the organic components promise to serve as the next generation of semiconductor materials for the microelectronics industry with the potential to be extremely stable, cheap, and mechanically flexible. Here, a perspective of recent research is provided, regarding the semiconducting properties of MOFs, bandgap studies, and their potential in microelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Quantifying Electromigration Processes in Sn-0.7Cu Solder with Lab-Scale X-Ray Computed Micro-Tomography

NASA Astrophysics Data System (ADS)

Mertens, James Charles Edwin

For decades, microelectronics manufacturing has been concerned with failures related to electromigration phenomena in conductors experiencing high current densities. The influence of interconnect microstructure on device failures related to electromigration in BGA and flip chip solder interconnects has become a significant interest with reduced individual solder interconnect volumes. A survey indicates that x-ray computed micro-tomography (muXCT) is an emerging, novel means for characterizing the microstructures' role in governing electromigration failures. This work details the design and construction of a lab-scale muXCT system to characterize electromigration in the Sn-0.7Cu lead-free solder system by leveraging in situ imaging. In order to enhance the attenuation contrast observed in multi-phase material systems, a modeling approach has been developed to predict settings for the controllable imaging parameters which yield relatively high detection rates over the range of x-ray energies for which maximum attenuation contrast is expected in the polychromatic x-ray imaging system. In order to develop this predictive tool, a model has been constructed for the Bremsstrahlung spectrum of an x-ray tube, and calculations for the detector's efficiency over the relevant range of x-ray energies have been made, and the product of emitted and detected spectra has been used to calculate the effective x-ray imaging spectrum. An approach has also been established for filtering 'zinger' noise in x-ray radiographs, which has proven problematic at high x-ray energies used for solder imaging. The performance of this filter has been compared with a known existing method and the results indicate a significant increase in the accuracy of zinger filtered radiographs. The obtained results indicate the conception of a powerful means for the study of failure causing processes in solder systems used as interconnects in microelectronic packaging devices. These results include the volumetric quantification of parameters which are indicative of both electromigration tolerance of solders and the dominant mechanisms for atomic migration in response to current stressing. This work is aimed to further the community's understanding of failure-causing electromigration processes in industrially relevant material systems for microelectronic interconnect applications and to advance the capability of available characterization techniques for their interrogation.

Dual manifold system and method for fluid transfer

DOEpatents

Doktycz, Mitchel J [Knoxville, TN; Bryan, William Louis [Knoxville, TN; Kress, Reid [Oak Ridge, TN

2003-05-27

A dual-manifold assembly is provided for the rapid, parallel transfer of liquid reagents from a microtiter plate to a solid state microelectronic device having biological sensors integrated thereon. The assembly includes aspiration and dispense manifolds connected by a plurality of conduits. In operation, the aspiration manifold is actuated such that the aspiration manifold is seated onto an array of reagent-filled wells of the microtiter plate. The wells are pressurized to force reagent through conduits toward the dispense manifold. A pressure pulse provided by a standard ink-jet printhead ejects nanoliter-to-picoliter droplets of reagent through an array of printhead orifices and onto test sites on the surface of the microelectronic device.

Dual manifold system and method for fluid transfer

DOEpatents

Doktycz, Mitchel J.; Bryan, William Louis; Kress, Reid

2003-09-30

A dual-manifold assembly is provided for the rapid, parallel transfer of liquid reagents from a microtiter plate to a solid state microelectronic device having biological sensors integrated thereon. The assembly includes aspiration and dispense manifolds connected by a plurality of conduits. In operation, the aspiration manifold is actuated such that the aspiration manifold is seated onto an array of reagent-filled wells of the microtiter plate. The wells are pressurized to force reagent through conduits toward the dispense manifold. A pressure pulse provided by a standard ink-jet printhead ejects nanoliter-to-picoliter droplets of reagent through an array of printhead orifices and onto test sites on the surface of the microelectronic device.

Evaluation of advanced microelectronics for inclusion in MIL-STD-975

NASA Technical Reports Server (NTRS)

Scott, W. Richard

1991-01-01

The approach taken by NASA and JPL (Jet Propulsion Laboratory) in the development of a MIL-STD-975 section which contains advanced technology such as Large Scale Integration and Very Large Scale Integration (LSI/VLSI) microelectronic devices is described. The parts listed in this section are recommended as satisfactory for NASA flight applications, in the absence of alternate qualified devices, based on satisfactory results of a vendor capability audit, the availability of sufficient characterization and reliability data from the manufacturers and users and negotiated detail procurement specifications. The criteria used in the selection and evaluation of the vendors and candidate parts, the preparation of procurement specifications, and the status of this activity are discussed.

3-Dimensional numerical study of cooling performance of a heat sink with air-water flow through mini-channel

NASA Astrophysics Data System (ADS)

Majumder, Sambit; Majumder, Abhik; Bhaumik, Swapan

2016-07-01

The present microelectronics market demands devices with high power dissipation capabilities having enhanced cooling per unit area. The drive for miniaturizing the devices to even micro level dimensions is shooting up the applied heat flux on such devices, resulting in complexity in heat transfer and cooling management. In this paper, a method of CPU processor cooling is introduced where active and passive cooling techniques are incorporated simultaneously. A heat sink consisting of fins is designed, where water flows internally through the mini-channel fins and air flows externally. Three dimensional numerical simulations are performed for large set of Reynolds number in laminar region using finite volume method for both developing flows. The dimensions of mini-channel fins are varied for several aspect ratios such as 1, 1.33, 2 and 4. Constant temperature (T) boundary condition is applied at heat sink base. Channel fluid temperature, pressure drop are analyzed to obtain best cooling option in the present study. It has been observed that as the aspect ratio of the channel decreases Nusselt number decreases while pressure drop increases. However, Nusselt number increases with increase in Reynolds number.

Nanostructured Materials Development for Space Power

NASA Technical Reports Server (NTRS)

Raffaelle, Ryne P.; Landi, B. J.; Elich, J. B.; Gennett, T.; Castro, S. L.; Bailey, Sheila G.; Hepp, Aloysius F.

2003-01-01

There have been many recent advances in the use of nanostructured materials for space power applications. In particular, the use of high purity single wall nanotubes holds promise for a variety of generation and storage devices including: thin film lithium ion batteries, microelectronic proton exchange membrane (PEM) fuel cells, polymeric thin film solar cells, and thermionic power supplies is presented. Semiconducting quantum dots alone and in conjunction with carbon nanotubes are also being investigated for possible use in high efficiency photovoltaic solar cells. This paper will review some of the work being done at RIT in conjunction with the NASA Glenn Research Center to utilize nanomaterials in space power devices.

Porous electrode apparatus for electrodeposition of detailed metal structures or microelectronic interconnections

DOEpatents

Griffiths, Stewart K.; Nilson, Robert H.; Hruby, Jill M.

2002-01-01

An apparatus and procedure for performing microfabrication of detailed metal structures by electroforming metal deposits within small cavities. Two primary areas of application are: the LIGA process which manufactures complex three-dimensional metal parts and the damascene process used for electroplating line and via interconnections of microelectronic devices. A porous electrode held in contact or in close proximity with a plating substrate or mold top to ensure one-dimensional and uniform current flow into all mold cavities is used. Electrolyte is pumped over the exposed surface of the porous electrode to ensure uniform ion concentrations at this external surface. The porous electrode prevents electrolyte circulation within individual mold cavities, avoiding preferential enhancement of ion transport in cavities having favorable geometries. Both current flow and ion transport are one-dimensional and identical in all mold cavities, so all metal deposits grow at the same rate eliminating nonuniformities of the prior art.

High-performance microsupercapacitors based on two-dimensional graphene/manganese dioxide/silver nanowire ternary hybrid film.

PubMed

Liu, Wenwen; Lu, Congxiang; Wang, Xingli; Tay, Roland Yingjie; Tay, Beng Kang

2015-02-24

Microsupercapacitors (MSCs), as one type of significant power source or energy storage unit in microelectronic devices, have attracted more and more attention. However, how to reasonably design electrode structures and exploit the active materials to endow the MSCs with excellent performances in a limited surface area still remains a challenge. Here, a reduced graphene oxide (RGO)/manganese dioxide (MnO2)/silver nanowire (AgNW) ternary hybrid film (RGMA ternary hybrid film) is successfully fabricated by a facile vacuum filtration and subsequent thermal reduction, and is used directly as a binder-free electrode for MSCs. Additionally, a flexible, transparent, all-solid state RMGA-MSC is also built, and its electrochemical performance in an ionic liquid gel electrolyte are investigated in depth. Notably, the RGMA-MSCs display superior electrochemical properties, including exceptionally high rate capability (up to 50000 mV·s(-1)), high frequency response (very short corresponding time constant τ0 = 0.14 ms), and excellent cycle stability (90.3% of the initial capacitance after 6000 cycles in ionic liquid gel electrolyte). Importantly, the electrochemical performance of RGMA-MSCs shows a strong dependence on the geometric parameters including the interspace between adjacent fingers and the width of the finger of MSCs. These encouraging results may not only provide important references for the design and fabrication of high-performance MSCs, but also make the RGMA ternary hybrid film promising for the next generation film lithium ion batteries and other energy storage devices.

Encapsulation methods for organic electrical devices

DOEpatents

Blum, Yigal D.; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijian

2013-06-18

The disclosure provides methods and materials suitable for use as encapsulation barriers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device encapsulated by alternating layers of a silicon-containing bonding material and a ceramic material. The encapsulation methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

A Reliability Simulator for Radiation-Hard Microelectronics Development

DTIC Science & Technology

1991-07-01

1 3.0 PHASE II WORK PLANS ................................................................ 2... plan . The correlation experimental details including the devices utilized, the hot-carrier stressing and the wafer-level radiation correlation procedure...channel devices, and a new lifetime extrapolation method is demonstrated for p-channel devices. 3.0 PHASE II WORK PLANS The Phase 1I program consisted of

Three-dimensional femtosecond laser processing for lab-on-a-chip applications

NASA Astrophysics Data System (ADS)

Sima, Felix; Sugioka, Koji; Vázquez, Rebeca Martínez; Osellame, Roberto; Kelemen, Lóránd; Ormos, Pal

2018-02-01

The extremely high peak intensity associated with ultrashort pulse width of femtosecond laser allows us to induce nonlinear interaction such as multiphoton absorption and tunneling ionization with materials that are transparent to the laser wavelength. More importantly, focusing the femtosecond laser beam inside the transparent materials confines the nonlinear interaction only within the focal volume, enabling three-dimensional (3D) micro- and nanofabrication. This 3D capability offers three different schemes, which involve undeformative, subtractive, and additive processing. The undeformative processing preforms internal refractive index modification to construct optical microcomponents including optical waveguides. Subtractive processing can realize the direct fabrication of 3D microfluidics, micromechanics, microelectronics, and photonic microcomponents in glass. Additive processing represented by two-photon polymerization enables the fabrication of 3D polymer micro- and nanostructures for photonic and microfluidic devices. These different schemes can be integrated to realize more functional microdevices including lab-on-a-chip devices, which are miniaturized laboratories that can perform reaction, detection, analysis, separation, and synthesis of biochemical materials with high efficiency, high speed, high sensitivity, low reagent consumption, and low waste production. This review paper describes the principles and applications of femtosecond laser 3D micro- and nanofabrication for lab-on-a-chip applications. A hybrid technique that promises to enhance functionality of lab-on-a-chip devices is also introduced.

Australian national networked tele-test facility for integrated systems

NASA Astrophysics Data System (ADS)

Eshraghian, Kamran; Lachowicz, Stefan W.; Eshraghian, Sholeh

2001-11-01

The Australian Commonwealth government recently announced a grant of 4.75 million as part of a 13.5 million program to establish a world class networked IC tele-test facility in Australia. The facility will be based on a state-of-the-art semiconductor tester located at Edith Cowan University in Perth that will operate as a virtual centre spanning Australia. Satellite nodes will be located at the University of Western Australia, Griffith University, Macquarie University, Victoria University and the University of Adelaide. The facility will provide vital equipment to take Australia to the frontier of critically important and expanding fields in microelectronics research and development. The tele-test network will provide state of the art environment for the electronics and microelectronics research and the industry community around Australia to test and prototype Very Large Scale Integrated (VLSI) circuits and other System On a Chip (SOC) devices, prior to moving to the manufacturing stage. Such testing is absolutely essential to ensure that the device performs to specification. This paper presents the current context in which the testing facility is being established, the methodologies behind the integration of design and test strategies and the target shape of the tele-testing Facility.

MEMS Using SOI Substrate

NASA Technical Reports Server (NTRS)

Tang, Tony K.

1999-01-01

At NASA, the focus for smaller, less costly missions has given impetus for the development of microspacecraft. MicroElectroMechanical System (MEMS) technology advances in the area of sensor, propulsion systems, and instruments, make the notion of a specialized microspacecraft feasible in the immediate future. Similar to the micro-electronics revolution,the emerging MEMS technology offers the integration of recent advances in micromachining and nanofabrication techniques with microelectronics in a mass-producible format,is viewed as the next step in device and instrument miniaturization. MEMS technology offers the potential of enabling or enhancing NASA missions in a variety of ways. This new technology allows the miniaturization of components and systems, where the primary benefit is a reduction in size, mass and power. MEMS technology also provides new capabilities and enhanced performance, where the most significant impact is in performance, regardless of system size. Finally,with the availability of mass-produced, miniature MEMS instrumentation comes the opportunity to rethink our fundamental measurement paradigms. It is now possible to expand our horizons from a single instrument perspective to one involving multi-node distributed systems. In the distributed systems and missions, a new system in which the functionality is enabled through a multiplicity of elements. Further in the future, the integration of electronics, photonics, and micromechanical functionalities into "instruments-on-a-chip" will provide the ultimate size, cost, function, and performance advantage. In this presentation, I will discuss recent development, requirement, and applications of various MEMS technologies and devices for space applications.

Evaluation of advanced microelectronic fluxless solder-bump contacts for hybrid microcircuits

NASA Technical Reports Server (NTRS)

Mandal, R. P.

1976-01-01

Technology for interconnecting monolithic integrated circuit chips with other components is investigated. The advantages and disadvantages of the current flip-chip approach as compared to other interconnection methods are outlined. A fluxless solder-bump contact technology is evaluated. Multiple solder-bump contacts were formed on silicon integrated circuit chips. The solder-bumps, comprised of a rigid nickel under layer and a compliant solder overlayer, were electroformed onto gold device pads with the aid of thick dry film photomasks. Different solder alloys and the use of conductive epoxy for bonding were explored. Fluxless solder-bump bond quality and reliability were evaluated by measuring the effects of centrifuge, thermal cycling, and high temperature storage on bond visual characteristics, bond electrical continuity, and bond shear tests. The applicability and suitability of this technology for hybrid microelectronic packaging is discussed.

Printing of microstructure strain sensor for structural health monitoring

NASA Astrophysics Data System (ADS)

Le, Minh Quyen; Ganet, Florent; Audigier, David; Capsal, Jean-Fabien; Cottinet, Pierre-Jean

2017-05-01

Recent advances in microelectronics and materials should allow the development of integrated sensors with transduction properties compatible with being printed directly onto a 3D substrate, especially metallic and polymer substrates. Inorganic and organic electronic materials in microstructured and nanostructured forms, intimately integrated in ink, offer particularly attractive characteristics, with realistic pathways to sophisticated embodiments. Here, we report on these strategies and demonstrate the potential of 3D-printed microelectronics based on a structural health monitoring (SHM) application for the precision weapon systems. We show that our printed sensors can be employed in non-invasive, high-fidelity and continuous strain monitoring of handguns, making it possible to implement printed sensors on a 3D substrate in either SHM or remote diagnostics. We propose routes to commercialization and novel device opportunities and highlight the remaining challenges for research.

Solar Variability and the Near-Earth Environment: Mining Enhanced Low Dose Rate Sensitivity Data From the Microelectronics and Photonics Test Bed Space Experiment

NASA Technical Reports Server (NTRS)

Turflinger, T.; Schmeichel, W.; Krieg, J.; Titus, J.; Campbell, A.; Reeves, M.; Marshall (P.); Hardage, Donna (Technical Monitor)

2004-01-01

This effort is a detailed analysis of existing microelectronics and photonics test bed satellite data from one experiment, the bipolar test board, looking to improve our understanding of the enhanced low dose rate sensitivity (ELDRS) phenomenon. Over the past several years, extensive total dose irradiations of bipolar devices have demonstrated that many of these devices exhibited ELDRS. In sensitive bipolar transistors, ELDRS produced enhanced degradation of base current, resulting in enhanced gain degradation at dose rates <0.1 rd(Si)/s compared to similar transistors irradiated at dose rates >1 rd(Si)/s. This Technical Publication provides updated information about the test devices, the in-flight experiment, and both flight-and ground-based observations. Flight data are presented for the past 5 yr of the mission. These data are compared to ground-based data taken on devices from the same date code lots. Information about temperature fluctuations, power shutdowns, and other variables encountered during the space flight are documented.

Effects of rapid thermal annealing on crystallinity and Sn surface segregation of {{Ge}}_{1-{\\boldsymbol{x}}}{{Sn}}_{{\\boldsymbol{x}}} films on Si (100) and Si (111)

NASA Astrophysics Data System (ADS)

Miao, Yuan-Hao; Hu, Hui-Yong; Song, Jian-Jun; Xuan, Rong-Xi; Zhang, He-Ming

2017-12-01

Not Available Project supported by the National Natural Science Foundation of China (Grant Nos. 61474085 and 61704130), the Science Research Plan in Shaanxi Province, China (Grant No. 2016GY-085), the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (Grant No. 90109162905), and the Fundamental Research Funds for the Central Universities, China (Grant No. 61704130).

Electric Field Distortion in Electro-Optical Devices Subjected to Ionizing Radiation.

DTIC Science & Technology

1983-12-26

applies- ties of scientif ic advances to nam military spae system . Versatilty and flaxibility hews beon developed to a high degree by the lehoratory...personel In deeling with the many problems encountered ina the nation’s rapidly dsvelopnas space system . 1expertise In the latest scientific developments is...desiga, distributed architectures for spacoerne m o putars, fault-tolerant c.speter system , artificia intelligence. end microelectronics applications

Electrical-transport properties and microwave device performance of sputtered TlCaBaCuO superconducting thin films

NASA Technical Reports Server (NTRS)

Subramanyam, G.; Kapoor, V. J.; Chorey, C. M.; Bhasin, K. B.

1992-01-01

The paper describes the processing and electrical transport measurements for achieving reproducible high-Tc and high-Jc sputtered TlCaBaCuO thin films on LaAlO3 substrates, for microelectronic applications. The microwave properties of TlCaBaCuO thin films were investigated by designing, fabricating, and characterizing microstrip ring resonators with a fundamental resonance frequency of 12 GHz on 10-mil-thick LaAlO3 substrates. Typical unloaded quality factors for a ring resonator with a superconducting ground plane of 0.3 micron-thickness and a gold ground plane of 1-micron-thickness were above 1500 at 65 K. Typical values of penetration depth at 0 K in the TlCaBaCuO thin films were between 7000 and 8000 A.

Moore's law and the impact on trusted and radiation-hardened microelectronics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Kwok Kee

2011-12-01

In 1965 Gordon Moore wrote an article claiming that integrated circuit density would scale exponentially. His prediction has remained valid for more than four decades. Integrated circuits have changed all aspects of everyday life. They are also the 'heart and soul' of modern systems for defense, national infrastructure, and intelligence applications. The United States government needs an assured and trusted microelectronics supply for military systems. However, migration of microelectronics design and manufacturing from the United States to other countries in recent years has placed the supply of trusted microelectronics in jeopardy. Prevailing wisdom dictates that it is necessary to usemore » microelectronics fabricated in a state-of-the-art technology for highest performance and military system superiority. Close examination of silicon microelectronics technology evolution and Moore's Law reveals that this prevailing wisdom is not necessarily true. This presents the US government the possibility of a totally new approach to acquire trusted microelectronics.« less

Method of forming crystalline silicon devices on glass

DOEpatents

McCarthy, Anthony M.

1995-01-01

A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

NASA Astrophysics Data System (ADS)

Xu, Hao; Yang, Hong; Luo, Wei-Chun; Xu, Ye-Feng; Wang, Yan-Rong; Tang, Bo; Wang, Wen-Wu; Qi, Lu-Wei; Li, Jun-Feng; Yan, Jiang; Zhu, Hui-Long; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

2016-08-01

The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it/N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601), the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129), and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics of Chinese Academy of Sciences.

Encapsulation methods and dielectric layers for organic electrical devices

DOEpatents

Blum, Yigal D; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijan

2013-07-02

The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

Enhanced discharge energy density of rGO/PVDF nanocomposites: The role of the heterointerface

NASA Astrophysics Data System (ADS)

Zhang, Ye; Wang, Yaqiong; Qi, Shaojun; Dunn, Steve; Dong, Hanshan; Button, Tim

2018-05-01

Recent reports of conductive-filler/polymer composites with large dielectric permittivity (K) make them potential candidates for flexible capacitors. Hence, an interesting question is how these high K composites behave under a strong electric field strength. In this letter, we use in-situ-reduced graphite oxide (rGO)/poly(vinylidene fluoride) (PVDF) nanocomposites as an example to study the energy storage behaviour of high K materials. We show the dielectric behaviour contrasts between weak and strong fields. High K materials inevitably become more lossy with increasing field strength. Simultaneously, we reveal that the in-situ reduction temperature can affect the energy storage performance. Improved energy storage performance is achieved for a nanocomposite reduced at a moderate temperature. When reduced at 160 °C, a device with an rGO volume fraction of 1.5 vol. % displayed a discharge energy density of 0.67 J/cm3 at 50 MV/m. This was 2.9 times greater than pure PVDF. We develop a model to explain this behaviour that proposes a reduced electrical contrast of the rGO/PVDF heterointerface minimising the recombination of localized charge carriers. Our results indicate, simultaneously, the potential and limitation of high K nanocomposites and shed light on the optimisation of the design and fabrication of high discharge energy density flexible capacitors for microelectronic devices.

Characterization and Modeling of High Power Microwave Effects in CMOS Microelectronics

DTIC Science & Technology

2010-01-01

margin measurement 28 Any voltage above the line marked VIH is considered a valid logic high on the input of the gate. VIH and VIL are defined...can handle any voltage noise level at the input up to VIL without changing state. The region in between VIL and VIH is considered an invalid logic...29 Table 2.2: Intrinsic device characteristics derived from SPETCRE simulations   VIH  (V)  VIL (V)  High Noise Margin  (V)  Low Noise Margin (V

PREFACE: E-MRS 2012 Spring Meeting, Symposium M: More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics

NASA Astrophysics Data System (ADS)

Wenger, Christian; Fompeyrine, Jean; Vallée, Christophe; Locquet, Jean-Pierre

2012-12-01

More than Moore explores a new area of Silicon based microelectronics, which reaches beyond the boundaries of conventional semiconductor applications. Creating new functionality to semiconductor circuits, More than Moore focuses on motivating new technological possibilities. In the past decades, the main stream of microelectronics progresses was mainly powered by Moore's law, with two focused development arenas, namely, IC miniaturization down to nano scale, and SoC based system integration. While the microelectronics community continues to invent new solutions around the world to keep Moore's law alive, there is increasing momentum for the development of 'More than Moore' technologies which are based on silicon technologies but do not simply scale with Moore's law. Typical examples are RF, Power/HV, Passives, Sensor/Actuator/MEMS or Bio-chips. The More than Moore strategy is driven by the increasing social needs for high level heterogeneous system integration including non-digital functions, the necessity to speed up innovative product creation and to broaden the product portfolio of wafer fabs, and the limiting cost and time factors of advanced SoC development. It is believed that More than Moore will add value to society on top of and beyond advanced CMOS with fast increasing marketing potentials. Important key challenges for the realization of the 'More than Moore' strategy are: perspective materials for future THz devices materials systems for embedded sensors and actuators perspective materials for epitaxial approaches material systems for embedded innovative memory technologies development of new materials with customized characteristics The Hot topics covered by the symposium M (More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics) at E-MRS 2012 Spring Meeting, 14-18 May 2012 have been: development of functional ceramics thin films New dielectric materials for advanced microelectronics bio- and CMOS compatible material systems piezoelectric films and nanostructures Atomic Layer Deposition (ALD) of oxides and nitrides characterization and metrology of very thin oxide layers We would like to take this opportunity to thank the Scientific Committee and Local Committee for bringing together a coherent and high quality Symposium at E-MRS 2012 Spring Meeting. Christian Wenger, Jean Fompeyrine, Christophe Vallée and Jean-Pierre Locquet Organizing Committee of Symposium M September 2012

Radiation Testing, Characterization and Qualification Challenges for Modern Microelectronics and Photonics Devices and Technologies

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Cohn, Lewis M.

2008-01-01

At an earlier conference we discussed a selection of the challenges for radiation testing of modern semiconductor devices focusing on state-of-the-art CMOS technologies. In this presentation, we extend this discussion focusing on the following areas: (1) Device packaging, (2) Evolving physical single even upset mechanisms, (3) Device complexity, and (4) the goal of understanding the limitations and interpretation of radiation testing results.

Predicting the Drop Performance of Solder Joints by Evaluating the Elastic Strain Energy from High-Speed Ball Pull Tests

NASA Astrophysics Data System (ADS)

You, Taehoon; Kim, Yunsung; Kim, Jina; Lee, Jaehong; Jung, Byungwook; Moon, Jungtak; Choe, Heeman

2009-03-01

Despite being expensive and time consuming, board-level drop testing has been widely used to assess the drop or impact resistance of the solder joints in handheld microelectronic devices, such as cellphones and personal digital assistants (PDAs). In this study, a new test method, which is much simpler and quicker, is proposed. The method involves evaluating the elastic strain energy and relating it to the impact resistance of the solder joint by considering the Young’s modulus of the bulk solder and the fracture stress of the solder joint during a ball pull test at high strain rates. The results show that solder joints can be ranked in order of descending elastic strain energy as follows: Sn-37Pb, Sn-1Ag-0.5Cu, Sn-3Ag-0.5Cu, and Sn-4Ag-0.5Cu. This order is consistent with the actual drop performances of the samples.

Three-dimensional modeling of n+-nu-n+ and p+-pi-p+ semiconducting devices for analog ULSI microelectronics

NASA Astrophysics Data System (ADS)

Gillet, Jean-Numa; Degorce, Jean-Yves; Belisle, Jonathan; Meunier, Michel

2004-03-01

Three-dimensional modeling of n^+-ν -n^+ and p^+-π -p^+ semiconducting devices for analog ULSI microelectronics Jean-Numa Gillet,^a,b Jean-Yves Degorce,^a Jonathan Bélisle^a and Michel Meunier.^a,c ^a École Polytechnique de Montréal, Dept. of Engineering Physics, CP 6079, Succ. Centre-vile, Montréal, Québec H3C 3A7, Canada. ^b Corresponding author. Email: Jean-Numa.Gillet@polymtl.ca ^c Also with LTRIM Technologies, 140-440, boul. A.-Frappier, Laval, Québec H7V 4B4, Canada. We present for the first time three-dimensional (3-D) modeling of n^+-ν -n^+ and p^+-π -p^+ semiconducting resistors, which are fabricated by laser-induced doping in a gateless MOSFET and present significant applications for analog ULSI microelectronics. Our modeling software is made up of three steps. The two first concerns modeling of a new laser-trimming fabrication process. With the molten-silicon temperature distribution obtained from the first, we compute in the second the 3-D dopant distribution, which creates the electrical link through the device gap. In this paper the emphasis is on the third step, which concerns 3-D modeling of the resistor electronic behavior with a new tube multiplexing algorithm (TMA). The device current-voltage (I-V) curve is usually obtained by solving three coupled partial differential equations with a finite-element method. A 3-D device as our resistor cannot be modeled with this classical method owing to its prohibitive computational cost in three dimensions. This problem is however avoided by our TMA, which divides the 3-D device into one-dimensional (1-D) multiplexed tubes. In our TMA 1-D systems of three ordinary differential equations are solved to determine the 3-D device I-V curve, which substantially increases computation speed compared with the classical method. Numerical results show a good agreement with experiments.

Multichannel noninvasive human-machine interface via stretchable µm thick sEMG patches for robot manipulation

NASA Astrophysics Data System (ADS)

Zhou, Ying; Wang, Youhua; Liu, Runfeng; Xiao, Lin; Zhang, Qin; Huang, YongAn

2018-01-01

Epidermal electronics (e-skin) emerging in recent years offer the opportunity to noninvasively and wearably extract biosignals from human bodies. The conventional processes of e-skin based on standard microelectronic fabrication processes and a variety of transfer printing methods, nevertheless, unquestionably constrains the size of the devices, posing a serious challenge to collecting signals via skin, the largest organ in the human body. Herein we propose a multichannel noninvasive human-machine interface (HMI) using stretchable surface electromyography (sEMG) patches to realize a robot hand mimicking human gestures. Time-efficient processes are first developed to manufacture µm thick large-scale stretchable devices. With micron thickness, the stretchable µm thick sEMG patches show excellent conformability with human skin and consequently comparable electrical performance with conventional gel electrodes. Combined with the large-scale size, the multichannel noninvasive HMI via stretchable µm thick sEMG patches successfully manipulates the robot hand with eight different gestures, whose precision is as high as conventional gel electrodes array.

Evaluating nanoscale ultra-thin metal films by means of lateral photovoltaic effect in metal-semiconductor structure.

PubMed

Zheng, Diyuan; Yu, Chongqi; Zhang, Qian; Wang, Hui

2017-12-15

Nanoscale metal-semiconductor (MS) structure materials occupy an important position in semiconductor and microelectronic field due to their abundant physical phenomena and effects. The thickness of metal films is a critical factor in determining characteristics of MS devices. How to detect or evaluate the metal thickness is always a key issue for realizing high performance MS devices. In this work, we propose a direct surface detection by use of the lateral photovoltaic effect (LPE) in MS structure, which can not only measure nanoscale thickness, but also detect the fluctuation of metal films. This method is based on the fact that the output of lateral photovoltaic voltage (LPV) is closely linked with the metal thickness at the laser spot. We believe this laser-based contact-free detection is a useful supplement to the traditional methods, such as AFM, SEM, TEM or step profiler. This is because these traditional methods are always incapable of directly detecting ultra-thin metal films in MS structure materials.

Evaluating nanoscale ultra-thin metal films by means of lateral photovoltaic effect in metal-semiconductor structure

NASA Astrophysics Data System (ADS)

Zheng, Diyuan; Yu, Chongqi; Zhang, Qian; Wang, Hui

2017-12-01

Nanoscale metal-semiconductor (MS) structure materials occupy an important position in semiconductor and microelectronic field due to their abundant physical phenomena and effects. The thickness of metal films is a critical factor in determining characteristics of MS devices. How to detect or evaluate the metal thickness is always a key issue for realizing high performance MS devices. In this work, we propose a direct surface detection by use of the lateral photovoltaic effect (LPE) in MS structure, which can not only measure nanoscale thickness, but also detect the fluctuation of metal films. This method is based on the fact that the output of lateral photovoltaic voltage (LPV) is closely linked with the metal thickness at the laser spot. We believe this laser-based contact-free detection is a useful supplement to the traditional methods, such as AFM, SEM, TEM or step profiler. This is because these traditional methods are always incapable of directly detecting ultra-thin metal films in MS structure materials.

Radiation protection using Martian surface materials in human exploration of Mars

NASA Technical Reports Server (NTRS)

Kim, M. H.; Thibeault, S. A.; Wilson, J. W.; Heilbronn, L.; Kiefer, R. L.; Weakley, J. A.; Dueber, J. L.; Fogarty, T.; Wilkins, R.

2001-01-01

To develop materials for shielding astronauts from the hazards of GCR, natural Martian surface materials are considered for their potential as radiation shielding for manned Mars missions. The modified radiation fluences behind various kinds of Martian rocks and regolith are determined by solving the Boltzmann equation using NASA Langley's HZETRN code along with the 1977 Solar Minimum galactic cosmic ray environmental model. To develop structural shielding composite materials for Martian surface habitats, theoretical predictions of the shielding properties of Martian regolith/polyimide composites has been computed to assess their shielding effectiveness. Adding high-performance polymer binders to Martian regolith to enhance structural properties also enhances the shielding properties of these composites because of the added hydrogenous constituents. Heavy ion beam testing of regolith simulant/polyimide composites is planned to validate this prediction. Characterization and proton beam tests are performed to measure structural properties and to compare the shielding effects on microelectronic devices, respectively.

III-V HEMTs: low-noise devices for high-frequency applications

NASA Astrophysics Data System (ADS)

Mateos, Javier

2003-05-01

With the recent development of broadband and satellite communications, one of the main engines for the advance of modern Microelectronics is the fabrication of devices with increasing cutoff frequency and lowest possible level of noise. Even if heterojunction bipolar devices (HBTs) have reached a good frequency performance, the top end of high frequency low-noise applications is monopolized by unipolar devices, mainly HEMTs (High Electron Mobility Transistors). In particular, within the vast family of heterojunction devices, the best results ever reported in the W-band have been obtained with InP based HEMTs using the AlInAs/InGaAs material system, improving those of usual GaAs based pseudomorphic HEMTs. In field effect devices, the reduction of the gate length (Lg) up to the technological limit is the main way to achieve the maximum performances. But the design of the devices is not so simple, when reducing the gate length it is convenient to keep constant the aspect ratio (gate length over gate-to-channel distance) in order to limit short channel effects. This operation can lead to the appearance of other unwanted effects, like the depletion of the channel due to the surface potential or the tunneling of electrons from the channel to the gate. Therefore, in order to optimize the high frequency or the low-noise behavior of the devices (that usually can not be reached together) not only the gate-to-channel distance must be chosen carefully, but also many other technological parameters (both geometrical and electrical): composition of materials, width of the device, length, depth and position of the recess, thickness and doping of the different layers, etc. Historically, these parameters have been optimized by classical simulation techniques or, when such simulations are not physically applicable, by the expensive 'test and error' procedure. With the use of computer simulation, the design optimization can be made in a short time and with no money spent. However, classical modelling of electronic devices meets important difficulties when dealing with advanced transistors, mainly due to their small size, and the Monte Carlo technique appears as the only possible choice

Nano-Nucleation Characteristic of Cu-Ag Alloy Directly Electrodeposited on W Diffusion Barrier for Microelectronic Device Interconnect.

PubMed

Kim, Kang O; Kim, Sunjung

2016-05-01

Cu-Ag alloy interconnect is promising for ultra-large-scale integration (ULSI) microelectronic system of which device dimension keeps shrinking. In this study, seedless electrodeposition of Cu-Ag alloy directly on W diffusion barrier as interconnect technology is presented in respect of nano-nucleation control. Chemical equilibrium state of electrolyte was fundamentally investigated according to the pH of electrolyte because direct nano-nucleation of Cu-Ag alloy on W surface is challenging. Chelation behavior of Cu2+ and Ag+ ions with citrate (Cit) and ammonia ligands was dependent on the pH of electrolyte. The amount and kind of Cu- and Ag-based complexes determine the deposition rate, size, elemental composition, and surface morphology of Cu-Ag alloy nano-nuclei formed on W surface.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Teherani, James T., E-mail: j.teherani@columbia.edu; Agarwal, Sapan; Chern, Winston

Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society's best hope for achieving a >10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly underperformed simulations and conventional MOSFETs. To explain the discrepancy between TFET experiments and simulations, we investigate the parasitic leakage current due to Auger generation, an intrinsic mechanism that cannot be mitigated with improved material quality or better device processing. We expose the intrinsic link between the Auger and band-to-band tunneling rates, highlighting the difficulty of increasing one without the other. From this link, wemore » show that Auger generation imposes a fundamental limit on ultimate TFET performance.« less

Crystallization Process of Superlattice-Like Sb/SiO2 Thin Films for Phase Change Memory Application

NASA Astrophysics Data System (ADS)

Zhu, Xiao-Qin; Zhang, Rui; Hu, Yi-Feng; Lai, Tian-Shu; Zhang, Jian-Hao; Zou, Hua; Song, Zhi-Tang

2018-05-01

Not Available Supported by the National Natural Science Foundation of China under Grant No 11774438, the Natural Science Foundation of Jiangsu Province under Grant No BK20151172, the Changzhou Science and Technology Bureau under Grant No CJ20160028, the Qing Lan Project, the Opening Project of State Key Laboratory of Silicon Materials under Grant No SKL2017-04, and the Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology of Institute of Microelectronics of Chinese Academy of Sciences.

A software upgrade method for micro-electronics medical implants.

PubMed

Cao, Yang; Hao, Hongwei; Xue, Lin; Li, Luming; Ma, Bozhi

2006-01-01

A software upgrade method for micro-electronics medical implants is designed to enhance the devices' function or renew the software if there are some bugs found, the software updating or some memory units disabled. The implants needn't be replaced by operations if the faults can be corrected through reprogramming, which reduces the patients' pain and improves the safety effectively. This paper introduces the software upgrade method using in-application programming (IAP) and emphasizes how to insure the system, especially the implanted part's reliability and stability while upgrading.

Recent patents on Cu/low-k dielectrics interconnects in integrated circuits.

PubMed

Jiang, Qing; Zhu, Yong F; Zhao, Ming

2007-01-01

In past decades, the development of microelectronics has moved along with constant speed of scaling to maximize transistor density as driven by the need for electrical and functional performance. For further development, the propagation velocity of electromagnetic waves becomes increasingly important due to their unyielding constraints on interconnect delay. To minimize it, it was forced to the introduction of the Cu/low-k dielectric interconnects to very large scale integrated circuits (VLSI) where k denotes the dielectric constant. In addition, reliable barrier structures, which are the thinnest part among the device parts to maximize space availability for the actual Cu IWs, are required to prevent penetration of different materials. In light of the above statements, this review will focus recent patents and some studies on Cu interconnects including Cu interconnect wires, low-k dielectrics and related barrier materials as well manufacturing techniques in VLSI, which are one of the most essential concerns in microelectronic industry and decides the further development of VLSI. In addition, possible future development in this field is considered.

Trends in Dielectric Etch for Microelectronics Processing

NASA Astrophysics Data System (ADS)

Hudson, Eric A.

2003-10-01

Dielectric etch technology faces many challenges to meet the requirements for leading-edge microelectronics processing. The move to sub 100-nm device design rules increases the aspect ratios of certain features, imposes tighter restrictions on etched features' critical dimensions, and increases the density of closely packed arrays of features. Changes in photolithography are driving transitions to new photoresist materials and novel multilayer resist methods. The increasing use of copper metallization and low-k interlayer dielectric materials has introduced dual-damascene integration methods, with specialized dielectric etch applications. A common need is the selective removal of multiple layers which have very different compositions, while maintaining close control of the etched features' profiles. To increase productivity, there is a growing trend toward in-situ processing, which allows several films to be successively etched during a single pass through the process module. Dielectric etch systems mainly utilize capacitively coupled etch reactors, operating with medium-density plasmas and low gas residence time. Commercial technology development increasingly relies upon plasma diagnostics and modeling to reduce development cycle time and maximize performance.

Monitoring Composite Material Pressure Vessels with a Fiber-Optic/Microelectronic Sensor System

NASA Technical Reports Server (NTRS)

Klimcak, C.; Jaduszliwer, B.

1995-01-01

We discuss the concept of an integrated, fiber-optic/microelectronic distributed sensor system that can monitor composite material pressure vessels for Air Force space systems to provide assessments of the overall health and integrity of the vessel throughout its entire operating history from birth to end of life. The fiber optic component would include either a semiconductor light emitting diode or diode laser and a multiplexed fiber optic sensing network incorporating Bragg grating sensors capable of detecting internal temperature and strain. The microelectronic components include a power source, a pulsed laser driver, time domain data acquisition hardware, a microprocessor, a data storage device, and a communication interface. The sensing system would be incorporated within the composite during its manufacture. The microelectronic data acquisition and logging system would record the environmental conditions to which the vessel has been subjected to during its storage and transit, e.g., the history of thermal excursions, pressure loading data, the occurrence of mechanical impacts, the presence of changing internal strain due to aging, delamination, material decomposition, etc. Data would be maintained din non-volatile memory for subsequent readout through a microcomputer interface.

Morphable 3D mesostructures and microelectronic devices by multistable buckling mechanics.

PubMed

Fu, Haoran; Nan, Kewang; Bai, Wubin; Huang, Wen; Bai, Ke; Lu, Luyao; Zhou, Chaoqun; Liu, Yunpeng; Liu, Fei; Wang, Juntong; Han, Mengdi; Yan, Zheng; Luan, Haiwen; Zhang, Yijie; Zhang, Yutong; Zhao, Jianing; Cheng, Xu; Li, Moyang; Lee, Jung Woo; Liu, Yuan; Fang, Daining; Li, Xiuling; Huang, Yonggang; Zhang, Yihui; Rogers, John A

2018-03-01

Three-dimensional (3D) structures capable of reversible transformations in their geometrical layouts have important applications across a broad range of areas. Most morphable 3D systems rely on concepts inspired by origami/kirigami or techniques of 3D printing with responsive materials. The development of schemes that can simultaneously apply across a wide range of size scales and with classes of advanced materials found in state-of-the-art microsystem technologies remains challenging. Here, we introduce a set of concepts for morphable 3D mesostructures in diverse materials and fully formed planar devices spanning length scales from micrometres to millimetres. The approaches rely on elastomer platforms deformed in different time sequences to elastically alter the 3D geometries of supported mesostructures via nonlinear mechanical buckling. Over 20 examples have been experimentally and theoretically investigated, including mesostructures that can be reshaped between different geometries as well as those that can morph into three or more distinct states. An adaptive radiofrequency circuit and a concealable electromagnetic device provide examples of functionally reconfigurable microelectronic devices.

Morphable 3D mesostructures and microelectronic devices by multistable buckling mechanics

NASA Astrophysics Data System (ADS)

Fu, Haoran; Nan, Kewang; Bai, Wubin; Huang, Wen; Bai, Ke; Lu, Luyao; Zhou, Chaoqun; Liu, Yunpeng; Liu, Fei; Wang, Juntong; Han, Mengdi; Yan, Zheng; Luan, Haiwen; Zhang, Yijie; Zhang, Yutong; Zhao, Jianing; Cheng, Xu; Li, Moyang; Lee, Jung Woo; Liu, Yuan; Fang, Daining; Li, Xiuling; Huang, Yonggang; Zhang, Yihui; Rogers, John A.

2018-03-01

Three-dimensional (3D) structures capable of reversible transformations in their geometrical layouts have important applications across a broad range of areas. Most morphable 3D systems rely on concepts inspired by origami/kirigami or techniques of 3D printing with responsive materials. The development of schemes that can simultaneously apply across a wide range of size scales and with classes of advanced materials found in state-of-the-art microsystem technologies remains challenging. Here, we introduce a set of concepts for morphable 3D mesostructures in diverse materials and fully formed planar devices spanning length scales from micrometres to millimetres. The approaches rely on elastomer platforms deformed in different time sequences to elastically alter the 3D geometries of supported mesostructures via nonlinear mechanical buckling. Over 20 examples have been experimentally and theoretically investigated, including mesostructures that can be reshaped between different geometries as well as those that can morph into three or more distinct states. An adaptive radiofrequency circuit and a concealable electromagnetic device provide examples of functionally reconfigurable microelectronic devices.

78 FR 59916 - Application(s) for Duty-Free Entry of Scientific Instruments

Federal Register 2010, 2011, 2012, 2013, 2014

2013-09-30

... Minnesota, Dept. of Chemical Engineering & Material Science, 421 Washington Avenue SE, Minneapolis, MN 55455... microelectronics, micro-electromechanical systems (MEMS) as well as nanotechnology materials and devices...

Method of forming crystalline silicon devices on glass

DOEpatents

McCarthy, A.M.

1995-03-21

A method is disclosed for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics. 7 figures.

Metal nanoparticle film-based room temperature Coulomb transistor.

PubMed

Willing, Svenja; Lehmann, Hauke; Volkmann, Mirjam; Klinke, Christian

2017-07-01

Single-electron transistors would represent an approach to developing less power-consuming microelectronic devices if room temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture, which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages. By using the scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb oscillations, and room temperature operation. Furthermore, this concept allows for versatile tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as period, position, and strength of the oscillations.

Finite Element Modeling of Micromachined MEMS Photon Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Datskos, P.G.; Evans, B.M.; Schonberger, D.

1999-09-20

The technology of microelectronics that has evolved over the past half century is one of great power and sophistication and can now be extended to many applications (MEMS and MOEMS) other than electronics. An interesting application of MEMS quantum devices is the detection of electromagnetic radiation. The operation principle of MEMS quantum devices is based on the photoinduced stress in semiconductors, and the photon detection results from the measurement of the photoinduced bending. These devices can be described as micromechanical photon detectors. In this work, we have developed a technique for simulating electronic stresses using finite element analysis. We havemore » used our technique to model the response of micromechanical photon devices to external stimuli and compared these results with experimental data. Material properties, geometry, and bimaterial design play an important role in the performance of micromechanical photon detectors. We have modeled these effects using finite element analysis and included the effects of bimaterial thickness coating, effective length of the device, width, and thickness.« less

Bringing order to the world of nanowire devices by phase shift lithography.

PubMed

Subannajui, Kittitat; Güder, Firat; Zacharias, Margit

2011-09-14

Semiconductor nanowire devices have several properties which match future requirements of scaling down the size of electronics. In typical microelectronics production, a number of microstructures are aligned precisely on top of each other during the fabrication process. In the case of nanowires, this mandatory condition is still hard to achieve. A technological breakthrough is needed to accurately place nanowires at any specific position and then form devices in mass production. In this article, an upscalable process combining conventional micromachining with phase shift lithography will be demonstrated as a suitable tool for nanowire device technology. Vertical Si and ZnO nanowires are demonstrated on very large (several cm(2)) areas. We demonstrate how the nanowire positions can be controlled, and the resulting nanowires are used for device fabrication. As an example Si/ZnO heterojunction diode arrays are fabricated. The electrical characterization of the produced devices has also been performed to confirm the functionality of the fabricated diodes.

Finite element modeling of micromachined MEMS photon devices

NASA Astrophysics Data System (ADS)

Evans, Boyd M., III; Schonberger, D. W.; Datskos, Panos G.

1999-09-01

The technology of microelectronics that has evolved over the past half century is one of great power and sophistication and can now be extended to many applications (MEMS and MOEMS) other than electronics. An interesting application of MEMS quantum devices is the detection of electromagnetic radiation. The operation principle of MEMS quantum devices is based on the photoinduced stress in semiconductors, and the photon detection results from the measurement of the photoinduced bending. These devices can be described as micromechanical photon detectors. In this work, we have developed a technique for simulating electronic stresses using finite element analysis. We have used our technique to model the response of micromechanical photon devices to external stimuli and compared these results with experimental data. Material properties, geometry, and bimaterial design play an important role in the performance of micromechanical photon detectors. We have modeled these effects using finite element analysis and included the effects of bimaterial thickness coating, effective length of the device, width, and thickness.

Graphene Aerogel Templated Fabrication of Phase Change Microspheres as Thermal Buffers in Microelectronic Devices.

PubMed

Wang, Xuchun; Li, Guangyong; Hong, Guo; Guo, Qiang; Zhang, Xuetong

2017-11-29

Phase change materials, changing from solid to liquid and vice versa, are capable of storing and releasing a large amount of thermal energy during the phase change, and thus hold promise for numerous applications including thermal protection of electronic devices. Shaping these materials into microspheres for additional fascinating properties is efficient but challenging. In this regard, a novel phase change microsphere with the design for electrical-regulation and thermal storage/release properties was fabricated via the combination of monodispersed graphene aerogel microsphere (GAM) and phase change paraffin. A programmable method, i.e., coupling ink jetting-liquid marbling-supercritical drying (ILS) techniques, was demonstrated to produce monodispersed graphene aerogel microspheres (GAMs) with precise size-control. The resulting GAMs showed ultralow density, low electrical resistance, and high specific surface area with only ca. 5% diameter variation coefficient, and exhibited promising performance in smart switches. The phase change microspheres were obtained by capillary filling of phase change paraffin inside the GAMs and exhibited excellent properties, such as low electrical resistance, high latent heat, well sphericity, and thermal buffering. Assembling the phase change microsphere into the microcircuit, we found that this tiny device was quite sensitive and could respond to heat as low as 0.027 J.

Toxic gases used in the microelectronics industry.

PubMed

Wald, P H; Becker, C E

1986-01-01

Toxic gases are among the most dangerous materials used in manufacturing semiconductors and related devices. The storage, handling, and disposal of these gases pose a major hazard to workers and to communities located near high-technology companies. It must be anticipated that accidents, acts of terrorism, and natural calamities will result in exposure. Flammability, corrosiveness, and concentration must be considered, as well as the immediate danger to life and known human health effects of the gases used.

REVIEW ARTICLE: How will physics be involved in silicon microelectronics

NASA Astrophysics Data System (ADS)

Kamarinos, Georges; Felix, Pierre

1996-03-01

By the year 2000 electronics will probably be the basis of the largest industry in the world. Silicon microelectronics will continue to keep a dominant place covering 99% of the `semiconductor market'. The aim of this review article is to indicate for the next decade the domains in which research work in `physics' is needed for a technological advance towards increasing speed, complexity and density of silicon ultra large scale integration (ULSI) integrated circuits (ICs). By `physics' we mean here not only condensed matter physics but also the basic physical chemistry and thermodynamics. The review begins with a brief and general introduction in which we elucidate the current state of the art and the trends in silicon microelectronics. Afterwards we examine the involvement of physics in silicon microelectronics in the two main sections. The first section concerns the processes of fabrication of ICs: lithography, oxidation, diffusion, chemical and physical vapour deposition, rapid thermal processing, etching, interconnections, ultra-clean processing and microcontamination. The second section concerns the electrical operation of the ULSI devices. It defines the integration scales and points out the importance of the intermediate scale of integration which is the scale of the next generation of ICs. The emergence of cryomicroelectronics is also reviewed and an extended paragraph is dedicated to the problem of reliability and ageing of devices and ICs: hot carrier degradation, interdevice coupling and noise are considered. It is shown, during our analysis, that the next generation of silicon ICs needs mainly: (i) `scientific' fabrication and (ii) microscopic modelling and simulation of the electrical characteristics of the scaled down devices. To attain the above objectives a return to the `first principles' of physics as well as a recourse to nonlinear and non-equilibrium thermodynamics are mandatory. In the references we list numerous review papers and references of specialized colloquia proceedings so that a more detailed survey of the subject is possible for the reader.

Assessment of intrinsic small signal parameters of submicron SiC MESFETs

NASA Astrophysics Data System (ADS)

Riaz, Mohammad; Ahmed, Muhammad Mansoor; Rafique, Umair; Ahmed, Umer Farooq

2018-01-01

In this paper, a technique has been developed to estimate intrinsic small signal parameters of submicron SiC MESFETs, designed for high power microwave applications. In the developed technique, small signal parameters are extracted by involving drain-to-source current, Ids instead of Schottky barrier depletion layer expression. It has been demonstrated that in SiC MESFETs, the depletion layer gets modified due to intense transverse electric field and/or self-heating effects, which are conventionally not taken into account. Thus, assessment of AC small signal parameters by employing depletion layer expression loses its accuracy for devices meant for high power applications. A set of expressions for AC small signal elements has been developed using Ids and its dependence on device biasing has been discussed. The validity of the proposed technique has been demonstrated using experimental data. Dr. Ahmed research interests are in Microelectronics, Microwave and RF Engineering and he has supervised numerous MS and PhD research projects. He authored over 100 research papers in the field of microelectronics. Dr. Ahmed is a fellow of the Institution of Engineering and Technology (IET), UK.; a Chartered Engineer (CEng) from the UK Engineering Council and holds the title of European Engineer (Eur Ing) from the European Federation of National Engineering Association (FEANI), Brussels. He is a life member of PEC (Pak); EDS & MTTS (USA).

Tailoring femtosecond 1.5-μm Bessel beams for manufacturing high-aspect-ratio through-silicon vias

NASA Astrophysics Data System (ADS)

He, Fei; Yu, Junjie; Tan, Yuanxin; Chu, Wei; Zhou, Changhe; Cheng, Ya; Sugioka, Koji

2017-01-01

Three-dimensional integrated circuits (3D ICs) are an attractive replacement for conventional 2D ICs as high-performance, low-power-consumption, and small-footprint microelectronic devices. However, one of the major remaining challenges is the manufacture of high-aspect-ratio through-silicon vias (TSVs), which is a crucial technology for the assembly of 3D Si ICs. Here, we present the fabrication of high-quality TSVs using a femtosecond (fs) 1.5-μm Bessel beam. To eliminate the severe ablation caused by the sidelobes of a conventional Bessel beam, a fs Bessel beam is tailored using a specially designed binary phase plate. We demonstrate that the tailored fs Bessel beam can be used to fabricate a 2D array of approximately ∅10-μm TSVs on a 100-μm-thick Si substrate without any sidelobe damage, suggesting potential application in the 3D assembly of 3D Si ICs.

Tailoring femtosecond 1.5-μm Bessel beams for manufacturing high-aspect-ratio through-silicon vias.

PubMed

He, Fei; Yu, Junjie; Tan, Yuanxin; Chu, Wei; Zhou, Changhe; Cheng, Ya; Sugioka, Koji

2017-01-18

Three-dimensional integrated circuits (3D ICs) are an attractive replacement for conventional 2D ICs as high-performance, low-power-consumption, and small-footprint microelectronic devices. However, one of the major remaining challenges is the manufacture of high-aspect-ratio through-silicon vias (TSVs), which is a crucial technology for the assembly of 3D Si ICs. Here, we present the fabrication of high-quality TSVs using a femtosecond (fs) 1.5-μm Bessel beam. To eliminate the severe ablation caused by the sidelobes of a conventional Bessel beam, a fs Bessel beam is tailored using a specially designed binary phase plate. We demonstrate that the tailored fs Bessel beam can be used to fabricate a 2D array of approximately ∅10-μm TSVs on a 100-μm-thick Si substrate without any sidelobe damage, suggesting potential application in the 3D assembly of 3D Si ICs.

Silicon photonics for high-performance interconnection networks

NASA Astrophysics Data System (ADS)

Biberman, Aleksandr

2011-12-01

We assert in the course of this work that silicon photonics has the potential to be a key disruptive technology in computing and communication industries. The enduring pursuit of performance gains in computing, combined with stringent power constraints, has fostered the ever-growing computational parallelism associated with chip multiprocessors, memory systems, high-performance computing systems, and data centers. Sustaining these parallelism growths introduces unique challenges for on- and off-chip communications, shifting the focus toward novel and fundamentally different communication approaches. This work showcases that chip-scale photonic interconnection networks, enabled by high-performance silicon photonic devices, enable unprecedented bandwidth scalability with reduced power consumption. We demonstrate that the silicon photonic platforms have already produced all the high-performance photonic devices required to realize these types of networks. Through extensive empirical characterization in much of this work, we demonstrate such feasibility of waveguides, modulators, switches, and photodetectors. We also demonstrate systems that simultaneously combine many functionalities to achieve more complex building blocks. Furthermore, we leverage the unique properties of available silicon photonic materials to create novel silicon photonic devices, subsystems, network topologies, and architectures to enable unprecedented performance of these photonic interconnection networks and computing systems. We show that the advantages of photonic interconnection networks extend far beyond the chip, offering advanced communication environments for memory systems, high-performance computing systems, and data centers. Furthermore, we explore the immense potential of all-optical functionalities implemented using parametric processing in the silicon platform, demonstrating unique methods that have the ability to revolutionize computation and communication. Silicon photonics enables new sets of opportunities that we can leverage for performance gains, as well as new sets of challenges that we must solve. Leveraging its inherent compatibility with standard fabrication techniques of the semiconductor industry, combined with its capability of dense integration with advanced microelectronics, silicon photonics also offers a clear path toward commercialization through low-cost mass-volume production. Combining empirical validations of feasibility, demonstrations of massive performance gains in large-scale systems, and the potential for commercial penetration of silicon photonics, the impact of this work will become evident in the many decades that follow.

Carbon-ionogel supercapacitors for integrated microelectronics.

PubMed

Leung, Greg; Smith, Leland; Lau, Jonathan; Dunn, Bruce; Chui, Chi On

2016-01-22

To exceed the performance limits of dielectric capacitors in microelectronic circuit applications, we design and demonstrate on-chip coplanar electric double-layer capacitors (EDLCs), or supercapacitors, employing carbon-coated gold electrodes with ionogel electrolyte. The formation of carbon-coated microelectrodes is accomplished by solution processing and results in a ten-fold increase in EDLC capacitance compared to bare gold electrodes without carbon. At frequencies up to 10 Hz, an areal capacitance of 2.1 pF μm(-2) is achieved for coplanar carbon-ionogel EDLCs with 10 μm electrode gaps and 0.14 mm(2) electrode area. Our smallest devices, comprised of 5 μm electrode gaps and 80 μm(2) of active electrode area, reach areal capacitance values of ∼0.3 pF μm(-2) at frequencies up to 1 kHz, even without carbon. To our knowledge, these are the highest reported values to date for on-chip EDLCs with sub-mm(2) areas. A physical EDLC model is developed through the use of computer-aided simulations for design exploration and optimization of coplanar EDLCs. Through modeling and comparison with experimental data, we highlight the importance of reducing the electrode gap and electrolyte resistance to achieve maximum performance from on-chip EDLCs.

Carbon-ionogel supercapacitors for integrated microelectronics

NASA Astrophysics Data System (ADS)

Leung, Greg; Smith, Leland; Lau, Jonathan; Dunn, Bruce; Chui, Chi On

2016-01-01

To exceed the performance limits of dielectric capacitors in microelectronic circuit applications, we design and demonstrate on-chip coplanar electric double-layer capacitors (EDLCs), or supercapacitors, employing carbon-coated gold electrodes with ionogel electrolyte. The formation of carbon-coated microelectrodes is accomplished by solution processing and results in a ten-fold increase in EDLC capacitance compared to bare gold electrodes without carbon. At frequencies up to 10 Hz, an areal capacitance of 2.1 pF μm-2 is achieved for coplanar carbon-ionogel EDLCs with 10 μm electrode gaps and 0.14 mm2 electrode area. Our smallest devices, comprised of 5 μm electrode gaps and 80 μm2 of active electrode area, reach areal capacitance values of ˜0.3 pF μm-2 at frequencies up to 1 kHz, even without carbon. To our knowledge, these are the highest reported values to date for on-chip EDLCs with sub-mm2 areas. A physical EDLC model is developed through the use of computer-aided simulations for design exploration and optimization of coplanar EDLCs. Through modeling and comparison with experimental data, we highlight the importance of reducing the electrode gap and electrolyte resistance to achieve maximum performance from on-chip EDLCs.

Editorial Conference Comments by the General Chairman

NASA Astrophysics Data System (ADS)

Hopkins, M. A.

2009-12-01

This paper tells about the comments given by the general chairman in the 2009 conference at Quebec City's Hilton and convection centre in the province of Quebec, canada. NSREC is recoginized as one of the premier international conference on radiation effects in electronic materials, devices and systems. Also the radiation effects in microelectronic devices and materials are discussed. Reliability effects in electronic device is also given in the conference.

In-situ microscale through-silicon via strain measurements by synchrotron x-ray microdiffraction exploring the physics behind data interpretation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Xi; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332; Thadesar, Paragkumar A.

2014-09-15

In-situ microscale thermomechanical strain measurements have been performed in combination with synchrotron x-ray microdiffraction to understand the fundamental cause of failures in microelectronics devices with through-silicon vias. The physics behind the raster scan and data analysis of the measured strain distribution maps is explored utilizing the energies of indexed reflections from the measured data and applying them for beam intensity analysis and effective penetration depth determination. Moreover, a statistical analysis is performed for the beam intensity and strain distributions along the beam penetration path to account for the factors affecting peak search and strain refinement procedure.

Fluid Dynamics and Solidification of Molten Solder Droplets Impacting on a Substrate in Microgravity

NASA Technical Reports Server (NTRS)

Megardis, C. M.; Poulikakos, D.; Diversiev, G.; Boomsma, K.; Xiong, B.; Nayagam, V.

1999-01-01

This program investigates the fluid dynamics and simultaneous solidification of molten solder droplets impacting on a flat smooth substrate. The problem of interest is directly relevant to the printing of microscopic solder droplets in surface mounting of microelectronic devices. The study consists of a theoretical and an experimental component. The theoretical work uses axisymmetric Navier-Stokes models based on finite element techniques. The experimental work will be ultimately performed in microgravity in order to allow for the use of larger solder droplets which make feasible the performance of accurate measurements, while maintaining similitude of the relevant fluid dynamics groups (Re, We).

Fluid Dynamics and Solidification of Molten Solder Droplets Impacting on a Substrate in Microgravity

NASA Technical Reports Server (NTRS)

Poulikakos, Dimos; Megaridis, Constantine M.; Vedha-Nayagam, M.

1996-01-01

This program investigates the fluid dynamics and simultaneous solidification of molten solder droplets impacting on a flat substrate. The problem of interest is directly relevant to the printing of microscopic solder droplets in surface mounting of microelectronic devices. The study consists of a theoretical and an experimental component. The theoretical work uses axisymmetric Navier-Stokes models based on finite element techniques. The experimental work is performed in microgravity to allow for the use of larger solder droplets that make feasible the performance of accurate measurements while maintaining similitude of the relevant fluid dynamics groups (Re, We) and keeping the effect of gravity negligible.

The effects of electron and hole transport layer with the electrode work function on perovskite solar cells

NASA Astrophysics Data System (ADS)

Deng, Quanrong; Li, Yiqi; Chen, Lian; Wang, Shenggao; Wang, Geming; Sheng, Yonglong; Shao, Guosheng

2016-09-01

The effects of electron and hole transport layer with the electrode work function on perovskite solar cells with the interface defects were simulated by using analysis of microelectronic and photonic structures-one-dimensional (AMPS-1D) software. The simulation results suggest that TiO2 electron transport layer provides best device performance with conversion efficiency of 25.9% compared with ZnO and CdS. The threshold value of back electrode work function for Spiro-OMeTAD, NiO, CuI and Cu2O hole transport layer are calculated to be 4.9, 4.8, 4.7 and 4.9 eV, respectively, to reach the highest conversion efficiency. The mechanisms of device physics with various electron and hole transport materials are discussed in details. The device performance deteriorates gradually as the increased density of interface defects located at ETM/absorber or absorber/HTM. This research results can provide helpful guidance for materials and metal electrode choice for perovskite solar cells.

Microelectronic components and metallic oxide studies and applications

NASA Technical Reports Server (NTRS)

Williams, L., Jr.

1976-01-01

The project involved work in two basic areas: (1) Evaluation of commercial screen printable thick film conductors, resistors, thermistors and dielectrics as well as alumina substrates used in hybird microelectronics industries. Results of tests made on materials produced by seven companies are presented. (2) Experimental studies on metallic oxides of copper and vanadium, in an effort to determine their electrochemical properties in crystalline, powder mixtures and as screen printable thick films constituted the second phase of the research effort. Oxide investigations were aimed at finding possible applications of these materials as switching devices memory elements and sensors.

RADIANCE PROCESS EVALUATION FOR PARTICLE REMOVAL

EPA Science Inventory

The microelectronics industry (wafer, flat panel displays, photomasks, and storage media) is transitioning to higher device densities and larger substrate formats. These changes will challenge standard cleaning methods and will require significant increases to the fabricator inf...

Multi-junction Thin-film Solar Cells on Flexible Substrates for Space Power

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Smith, Mark; Scofield, John H.; Dickman, John E.; Lush, Gregory B.; Morel, Donald L.; Ferekides, Christos; Dhere, Neelkanth G.

2002-01-01

The ultimate objective of the thin-film program at NASA GRC is development of a 20 percent AM0 thin-film device technology with high power/weight ratio. Several approaches are outlined to improve overall device efficiency and power/weight ratio. One approach involves the use of very lightweight flexible substrates such as polyimides (i.e., Kapton(Trademark)) or metal foil. Also, a compound semiconductor tandem device structure that can meet this objective is proposed and simulated using Analysis of Microelectronic and Photonic Structures (AMPS). AMPS modeling of current devices in tandem format indicate that AM0 efficiencies near 20 percent can be achieved. And with improvements in materials, efficiencies approaching 25 percent are achievable. Several important technical issues need to be resolved to realize these complex devices: development of a wide bandgap material with good electronic properties, development of transparent contacts, and targeting a 2-terminal device structure (with more complicated processing and tunnel junction) or 4-terminal device. Recent progress in the NASA GRC program is outlined.

FOREWORD: Proceedings of the 39th International Microelectronics and Packaging IMAPS Poland Conference

NASA Astrophysics Data System (ADS)

Jasiński, Piotr; Górecki, Krzysztof; Bogdanowicz, Robert

2016-01-01

These proceedings are a collection of the selected articles presented at the 39th International Microelectronics and Packaging IMAPS Poland Conference, held in Gdansk, Poland on September 20-23, 2015 (IMAPS Poland 2015). The conference has been held under the scientific patronage of the International Microelectronics and Packaging Society Poland Chapter and the Committee of Electronics and Telecommunication, Polish Academy of Science and jointly hosted by the Gdansk University of Technology, Faculty of Electronics, Telecommunication and Informatics (GUT) and the Gdynia Maritime University, Faculty of Electrical Engineering (GMU). The IMAPS Poland conference series aims to advance interdisciplinary scientific information exchange and the discussion of the science and technology of advanced electronics. The IMAPS Poland 2015 conference took place in the heart of Gdansk, two minutes walking distance from the beach. The surroundings and location of the venue guaranteed excellent working and leisure conditions. The three-day conference highlighted invited talks by outstanding scientists working in important areas of electronics and electronic material science. The eight sessions covered areas in the fields of electronics packaging, interconnects on PCB, Low Temperature Co-fired Ceramic (LTCC), MEMS devices, transducers, sensors and modelling of electronic devices. The conference was attended by 99 participants from 11 countries. The conference schedule included 18 invited presentations and 78 poster presentations.

Robust integration schemes for junction-based modulators in a 200mm CMOS compatible silicon photonic platform (Conference Presentation)

NASA Astrophysics Data System (ADS)

Szelag, Bertrand; Abraham, Alexis; Brision, Stéphane; Gindre, Paul; Blampey, Benjamin; Myko, André; Olivier, Segolene; Kopp, Christophe

2017-05-01

Silicon photonic is becoming a reality for next generation communication system addressing the increasing needs of HPC (High Performance Computing) systems and datacenters. CMOS compatible photonic platforms are developed in many foundries integrating passive and active devices. The use of existing and qualified microelectronics process guarantees cost efficient and mature photonic technologies. Meanwhile, photonic devices have their own fabrication constraints, not similar to those of cmos devices, which can affect their performances. In this paper, we are addressing the integration of PN junction Mach Zehnder modulator in a 200mm CMOS compatible photonic platform. Implantation based device characteristics are impacted by many process variations among which screening layer thickness, dopant diffusion, implantation mask overlay. CMOS devices are generally quite robust with respect to these processes thanks to dedicated design rules. For photonic devices, the situation is different since, most of the time, doped areas must be carefully located within waveguides and CMOS solutions like self-alignment to the gate cannot be applied. In this work, we present different robust integration solutions for junction-based modulators. A simulation setup has been built in order to optimize of the process conditions. It consist in a Mathlab interface coupling process and device electro-optic simulators in order to run many iterations. Illustrations of modulator characteristic variations with process parameters are done using this simulation setup. Parameters under study are, for instance, X and Y direction lithography shifts, screening oxide and slab thicknesses. A robust process and design approach leading to a pn junction Mach Zehnder modulator insensitive to lithography misalignment is then proposed. Simulation results are compared with experimental datas. Indeed, various modulators have been fabricated with different process conditions and integration schemes. Extensive electro-optic characterization of these components will be presented.

A molecular shift register based on electron transfer

NASA Technical Reports Server (NTRS)

Hopfield, J. J.; Onuchic, Josenelson; Beratan, David N.

1988-01-01

An electronic shift-register memory at the molecular level is described. The memory elements are based on a chain of electron-transfer molecules and the information is shifted by photoinduced electron-transfer reactions. This device integrates designed electronic molecules onto a very large scale integrated (silicon microelectronic) substrate, providing an example of a 'molecular electronic device' that could actually be made. The design requirements for such a device and possible synthetic strategies are discussed. Devices along these lines should have lower energy usage and enhanced storage density.

Nanomanufacturing : nano-structured materials made layer-by-layer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cox, James V.; Cheng, Shengfeng; Grest, Gary Stephen

Large-scale, high-throughput production of nano-structured materials (i.e. nanomanufacturing) is a strategic area in manufacturing, with markets projected to exceed $1T by 2015. Nanomanufacturing is still in its infancy; process/product developments are costly and only touch on potential opportunities enabled by growing nanoscience discoveries. The greatest promise for high-volume manufacturing lies in age-old coating and imprinting operations. For materials with tailored nm-scale structure, imprinting/embossing must be achieved at high speeds (roll-to-roll) and/or over large areas (batch operation) with feature sizes less than 100 nm. Dispersion coatings with nanoparticles can also tailor structure through self- or directed-assembly. Layering films structured with thesemore » processes have tremendous potential for efficient manufacturing of microelectronics, photovoltaics and other topical nano-structured devices. This project is designed to perform the requisite R and D to bring Sandia's technology base in computational mechanics to bear on this scale-up problem. Project focus is enforced by addressing a promising imprinting process currently being commercialized.« less

Metal nanoparticle film–based room temperature Coulomb transistor

PubMed Central

Willing, Svenja; Lehmann, Hauke; Volkmann, Mirjam; Klinke, Christian

2017-01-01

Single-electron transistors would represent an approach to developing less power–consuming microelectronic devices if room temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture, which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages. By using the scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb oscillations, and room temperature operation. Furthermore, this concept allows for versatile tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as period, position, and strength of the oscillations. PMID:28740864

A manufacturable process integration approach for graphene devices

NASA Astrophysics Data System (ADS)

Vaziri, Sam; Lupina, Grzegorz; Paussa, Alan; Smith, Anderson D.; Henkel, Christoph; Lippert, Gunther; Dabrowski, Jarek; Mehr, Wolfgang; Östling, Mikael; Lemme, Max C.

2013-06-01

In this work, we propose an integration approach for double gate graphene field effect transistors. The approach includes a number of process steps that are key for future integration of graphene in microelectronics: bottom gates with ultra-thin (2 nm) high-quality thermally grown SiO2 dielectrics, shallow trench isolation between devices and atomic layer deposited Al2O3 top gate dielectrics. The complete process flow is demonstrated with fully functional GFET transistors and can be extended to wafer scale processing. We assess, through simulation, the effects of the quantum capacitance and band bending in the silicon substrate on the effective electric fields in the top and bottom gate oxide. The proposed process technology is suitable for other graphene-based devices such as graphene-based hot electron transistors and photodetectors.

Hydrogen sensors based on catalytic metals

NASA Astrophysics Data System (ADS)

Beklemyshev, V. I.; Berezine, V.; Bykov, Victor A.; Kiselev, L.; Makhonin, I.; Pevgov, V.; Pustovoy, V.; Semynov, A.; Sencov, Y.; Shkuropat, I.; Shokin, A.

1999-11-01

On the base of microelectronical and micromechanical technology were designed and developed converters of hydrogen concentration to electrical signals. The devices of controlling concentration of hydrogen in the air were developed. These devices were applied for ensuring fire and explosion security of complex technological teste of missile oxygen-hydrogen engine, developed for cryogenic accelerations block. The sensor block of such device was installed directly on the armor-plate, to which was attached tested engine.

First-principles investigations of proton generation in α-quartz

NASA Astrophysics Data System (ADS)

Yue, Yunliang; Song, Yu; Zuo, Xu

2018-03-01

Proton plays a key role in the interface-trap formation that is one of the primary reliability concerns, thus learning how it behaves is key to understand the radiation response of microelectronic devices. The first-principles calculations have been applied to explore the defects and their reactions associated with the proton release in α-quartz, the well-known crystalline isomer of amorphous silica. When a high concentration of molecular hydrogen (H2) is present, the proton generation can be enhanced by cracking the H2 molecules at the positively charged oxygen vacancies in dimer configuration. If the concentration of molecular hydrogen is low, the proton generation mainly depends on the proton dissociation of the doubly-hydrogenated defects. In particular, a fully passivated {E}2^{\\prime } center can dissociate to release a proton barrierlessly by structure relaxation once trapping a hole. This research provides a microscopic insight into the proton release in silicon dioxide, the critical step associated with the interface-trap formation under radiation in microelectronic devices. Project supported by the Science Challenge Project, China (Grant No. TZ2016003-1-105), CAEP Microsystem and THz Science and Technology Foundation, China (Grant No. CAEPMT201501), the National Natural Science Foundation China (Grant No. NSFC 11404300), and the National Basic Research Program of China (Grant No. 2011CB606405).

Diffusion-Driven Charge Transport in Light Emitting Devices

PubMed Central

Oksanen, Jani; Suihkonen, Sami

2017-01-01

Almost all modern inorganic light-emitting diode (LED) designs are based on double heterojunctions (DHJs) whose structure and current injection principle have remained essentially unchanged for decades. Although highly efficient devices based on the DHJ design have been developed and commercialized for energy-efficient general lighting, the conventional DHJ design requires burying the active region (AR) inside a pn-junction. This has hindered the development of emitters utilizing nanostructured ARs located close to device surfaces such as nanowires or surface quantum wells. Modern DHJ III-N LEDs also exhibit resistive losses that arise from the DHJ device geometry. The recently introduced diffusion-driven charge transport (DDCT) emitter design offers a novel way to transport charge carriers to unconventionally placed ARs. In a DDCT device, the AR is located apart from the pn-junction and the charge carriers are injected into the AR by bipolar diffusion. This device design allows the integration of surface ARs to semiconductor LEDs and offers a promising method to reduce resistive losses in high power devices. In this work, we present a review of the recent progress in gallium nitride (GaN) based DDCT devices, and an outlook of potential DDCT has for opto- and microelectronics. PMID:29231900

On-chip photonic microsystem for optical signal processing based on silicon and silicon nitride platforms

NASA Astrophysics Data System (ADS)

Li, Yu; Li, Jiachen; Yu, Hongchen; Yu, Hai; Chen, Hongwei; Yang, Sigang; Chen, Minghua

2018-04-01

The explosive growth of data centers, cloud computing and various smart devices is limited by the current state of microelectronics, both in terms of speed and heat generation. Benefiting from the large bandwidth, promising low power consumption and passive calculation capability, experts believe that the integrated photonics-based signal processing and transmission technologies can break the bottleneck of microelectronics technology. In recent years, integrated photonics has become increasingly reliable and access to the advanced fabrication process has been offered by various foundries. In this paper, we review our recent works on the integrated optical signal processing system. We study three different kinds of on-chip signal processors and use these devices to build microsystems for the fields of microwave photonics, optical communications and spectrum sensing. The microwave photonics front receiver was demonstrated with a signal processing range of a full-band (L-band to W-band). A fully integrated microwave photonics transceiver without the on-chip laser was realized on silicon photonics covering the signal frequency of up 10 GHz. An all-optical orthogonal frequency division multiplexing (OFDM) de-multiplier was also demonstrated and used for an OFDM communication system with the rate of 64 Gbps. Finally, we show our work on the monolithic integrated spectrometer with a high resolution of about 20 pm at the central wavelength of 1550 nm. These proposed on-chip signal processing systems potential applications in the fields of radar, 5G wireless communication, wearable devices and optical access networks.

Design, processing and testing of LSI arrays hybrid microelectronics task

NASA Technical Reports Server (NTRS)

Himmel, R. P.; Stuhlbarg, S. M.; Salmassy, S.

1978-01-01

Those factors affecting the cost of electronic subsystems utilizing LSI microcircuits were determined and the most efficient methods for low cost packaging of LSI devices as a function of density and reliability were developed.

Active Microelectronic Neurosensor Arrays for Implantable Brain Communication Interfaces

PubMed Central

Song, Y.-K.; Borton, D. A.; Park, S.; Patterson, W. R.; Bull, C. W.; Laiwalla, F.; Mislow, J.; Simeral, J. D.; Donoghue, J. P.; Nurmikko, A. V.

2010-01-01

We have built a wireless implantable microelectronic device for transmitting cortical signals transcutaneously. The device is aimed at interfacing a microelectrode array cortical to an external computer for neural control applications. Our implantable microsystem enables presently 16-channel broadband neural recording in a non-human primate brain by converting these signals to a digital stream of infrared light pulses for transmission through the skin. The implantable unit employs a flexible polymer substrate onto which we have integrated ultra-low power amplification with analog multiplexing, an analog-to-digital converter, a low power digital controller chip, and infrared telemetry. The scalable 16-channel microsystem can employ any of several modalities of power supply, including via radio frequency by induction, or infrared light via a photovoltaic converter. As of today, the implant has been tested as a sub-chronic unit in non-human primates (~ 1 month), yielding robust spike and broadband neural data on all available channels. PMID:19502132

Nanoscale temperature mapping in operating microelectronic devices

DOE PAGES

Mecklenburg, Matthew; Hubbard, William A.; White, E. R.; ...

2015-02-05

We report that modern microelectronic devices have nanoscale features that dissipate power nonuniformly, but fundamental physical limits frustrate efforts to detect the resulting temperature gradients. Contact thermometers disturb the temperature of a small system, while radiation thermometers struggle to beat the diffraction limit. Exploiting the same physics as Fahrenheit’s glass-bulb thermometer, we mapped the thermal expansion of Joule-heated, 80-nanometer-thick aluminum wires by precisely measuring changes in density. With a scanning transmission electron microscope (STEM) and electron energy loss spectroscopy (EELS), we quantified the local density via the energy of aluminum’s bulk plasmon. Rescaling density to temperature yields maps with amore » statistical precision of 3 kelvin/hertz ₋1/2, an accuracy of 10%, and nanometer-scale resolution. Lastly, many common metals and semiconductors have sufficiently sharp plasmon resonances to serve as their own thermometers.« less

Performance Characterization of Digital Optical Data Transfer Systems for Use in the Space Radiation Environment

NASA Technical Reports Server (NTRS)

Reed, Robert A.; Ladbury, Ray L.; Day, John H. (Technical Monitor)

2000-01-01

Radiation effects in photonic and microelectronic components can impact the performance of high-speed digital optical data link in a variety of ways. This segment of the short course focuses on radiation effects in digital optical data links operating in the MHz to GHz regime. (Some of the information is applicable to frequencies above and below this regime) The three basic component level effects that should be considered are Total Ionizing Dose (TID), Displacement Damage Dose (DDD) and Single Event Effects (SEE). In some cases the system performance degradation can be quantified from component level tests, while in others a more holistic characterization approach must be taken. In Section 2.0 of this segment of the Short Course we will give a brief overview of the space radiation environment follow by a summary of the basic space radiation effects important for microelectronics and photonics listed above. The last part of this section will give an example of a typical mission radiation environment requirements. Section 3.0 gives an overview of intra-satellite digital optical data link systems. It contains a discussion of the digital optical data link and it's components. Also, we discuss some of the important system performance metrics that are impacted by radiation effects degradation of optical and optoelectronic component performance. Section 4.0 discusses radiation effects in optical and optoelectronic components. While each component effect will be discussed, the focus of this section is on degradation of passive optical components and SEE in photodiodes (other mechanisms are covered in segment II of this short course entitled "Photonic Devices with Complex and Multiple Failure Modes"). Section 5.0 will focus on optical data link system response to the space radiation environment. System level SEE ground testing will be discussed. Then we give a discussion of system level assessment of data link performance when operating in the space radiation environment.

Modeling of a Micro-Electronic Mechanical Systems (MEMS) Deformable Mirror for Simulation and Characterization

DTIC Science & Technology

2016-09-01

1  II.  MODEL DESIGN ...Figure 10.  Experimental Optical Layout for the Boston DM Characterization ..........13  Figure 11.  Side View Showing the Curved Surface on a DM...of different methods for deposition, patterning, and etching until the desired design of the device is achieved. While a large number of devices

Solution Deposition Methods for Carbon Nanotube Field-Effect Transistors

DTIC Science & Technology

2009-06-01

authorized documents. Citation of manufacturer’s or trade names does not constitute an official endorsement or approval of the use thereof. Destroy...processed into FETs using standard microelectronics processing techniques. The resulting devices were characterized using a semiconductor parameter...method will help to determine which conditions are useful for producing CNT devices for chemical sensing and electronic applications. 15. SUBJECT TERMS

Applying CLIPS to control of molecular beam epitaxy processing

NASA Technical Reports Server (NTRS)

Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

1990-01-01

A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

The microstructure matters: breaking down the barriers with single crystalline silicon as negative electrode in Li-ion batteries

PubMed Central

Sternad, M.; Forster, M.; Wilkening, M.

2016-01-01

Silicon-based microelectronics forms a major foundation of our modern society. Small lithium-ion batteries act as the key enablers of its success and have revolutionised portable electronics used in our all everyday’s life. While large-scale LIBs are expected to help establish electric vehicles, on the other end of device size chip-integrated Si-based μ-batteries may revolutionise microelectronics once more. In general, Si is regarded as one of the white hopes since it offers energy densities being ten times higher than conventional anode materials. The use of monocrystalline, wafer-grade Si, however, requires several hurdles to be overcome since it its volume largely expands during lithiation. Here, we will show how 3D patterned Si wafers, prepared by the sophisticated techniques from semiconductor industry, are to be electrochemically activated to overcome these limitations and to leverage their full potential being reflected in stable charge capacities (>1000 mAhg–1) and high Coulomb efficiencies (98.8%). PMID:27531589

Space Radiation Environment Prediction for VLSI microelectronics devices onboard a LEO Satellite using OMERE-Trad Software

NASA Astrophysics Data System (ADS)

Sajid, Muhammad

This tutorial/survey paper presents the assessment/determination of level of hazard/threat to emerging microelectronics devices in Low Earth Orbit (LEO) space radiation environment with perigee at 300 Km, apogee at 600Km altitude having different orbital inclinations to predict the reliability of onboard Bulk Built-In Current Sensor (BBICS) fabricated in 350nm technology node at OptMA Lab. UFMG Brazil. In this context, the various parameters for space radiation environment have been analyzed to characterize the ionizing radiation environment effects on proposed BBICS. The Space radiation environment has been modeled in the form of particles trapped in Van-Allen radiation belts(RBs), Energetic Solar Particles Events (ESPE) and Galactic Cosmic Rays (GCR) where as its potential effects on Device- Under-Test (DUT) has been predicted in terms of Total Ionizing Dose (TID), Single-Event Effects (SEE) and Displacement Damage Dose (DDD). Finally, the required mitigation techniques including necessary shielding requirements to avoid undesirable effects of radiation environment at device level has been estimated /determined with assumed standard thickness of Aluminum shielding. In order to evaluate space radiation environment and analyze energetic particles effects on BBICS, OMERE toolkit developed by TRAD was utilized.

Voltage-Controlled On/Off Switching of Ferromagnetism in Manganite Supercapacitors.

PubMed

Molinari, Alan; Hahn, Horst; Kruk, Robert

2018-01-01

The ever-growing technological demand for more advanced microelectronic and spintronic devices keeps catalyzing the idea of controlling magnetism with an electric field. Although voltage-driven on/off switching of magnetization is already established in some magnetoelectric (ME) systems, often the coupling between magnetic and electric order parameters lacks an adequate reversibility, energy efficiency, working temperature, or switching speed. Here, the ME performance of a manganite supercapacitor composed of a ferromagnetic, spin-polarized ultrathin film of La 0.74 Sr 0.26 MnO 3 (LSMO) electrically charged with an ionic liquid electrolyte is investigated. Fully reversible, rapid, on/off switching of ferromagnetism in LSMO is demonstrated in combination with a shift in Curie temperature of up to 26 K and a giant ME coupling coefficient of ≈226 Oe V -1 . The application of voltages of only ≈2 V results in ultralow energy consumptions of about 90 µJ cm -2 . This work provides a step forward toward low-power, high-endurance electrical switching of magnetism for the development of high-performance ME spintronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Surface-related phase noise in SAW resonators.

PubMed

Enguang, Dai

2002-05-01

With the advent of nanotechnologies, electronic devices are shrinking in thickness and width to reduce mass and, thereby, increase frequency and spe Lithographic approaches are capable of creating metal connections with thickness and lateral dimensions down to about 20 nm, approaching the molecular scale. As a result, the dimensions of outer particles are comparable with, or even larger than, those of active or passive regions in electronics devices. Therefore, directing our attention toward the effect of surface fluctuations is of practical significance. In fact, electronic device surface-related phenomena have already received more and more attention as device size decreases. In connection with surface phase noise, selection of a suitable device with high surface sensitivity is important. In this paper, high Q-value surface acoustic wave resonators were employed because of their strong sensitivity to surface perturbation. Phase noise in SAW resonators related to surface particle motion has been examined both theoretically and experimentally. This kind of noise has been studied from the point of view of a stochastic process resulting from particle molecular adsorption and desorption. Experimental results suggest that some volatile vapors can change flicker noise 1/f and random walk noise 1/f2. An analysis has been made indicating that these effects are not associated with Q value variation, but are generated by the change in the dynamic rate of adsorption and desorption of surface particles. Research on particle motion above the device substrate might explain the differences observed from the model based only on the substrate itself. Results might lead to a better understanding of the phase noise mechanism in micro-electronic devices and help us to build oscillators with improved performance.

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics.

PubMed

Rao, Sandro; Pangallo, Giovanni; Della Corte, Francesco Giuseppe

2016-01-06

Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34-40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

Materials and processing science: Limits for microelectronics

NASA Astrophysics Data System (ADS)

Rosenberg, R.

1988-09-01

The theme of this talk will be to illustrate examples of technologies that will drive materials and processing sciences to the limit and to describe some of the research being pursued to understand materials interactions which are pervasive to projected structure fabrication. It is to be expected that the future will see a progression to nanostructures where scaling laws will be tested and quantum transport will become more in evidence, to low temperature operation for tighter control and improved performance, to complex vertical profiles where 3D stacking and superlattices will produce denser packing and device flexibility, to faster communication links with optoelectronics, and to compatible packaging technologies. New low temperature processing techniques, such as epitaxy of silicon, PECVD of dielectrics, low temperature high pressure oxidation, silicon-germanium heterostructures, etc., must be combined with shallow metallurgies, new lithographic technologies, maskless patterning, rapid thermal processing (RTP) to produce needed profile control, reduce process incompatibilities and develop new device geometries. Materials interactions are of special consequence for chip substrates and illustrations of work in metal-ceramic and metal-polymer adhesion will be offered.

Silicon based nanogap device for studying electrical transport phenomena in molecule-nanoparticle hybrids.

PubMed

Strobel, Sebastian; Hernández, Rocío Murcia; Hansen, Allan G; Tornow, Marc

2008-09-17

We report the fabrication and characterization of vertical nanogap electrode devices using silicon-on-insulator substrates. Using only standard silicon microelectronic process technology, nanogaps down to 26 nm electrode separation were prepared. Transmission electron microscopy cross-sectional analysis revealed the well defined material architecture of the nanogap, comprising two electrodes of dissimilar geometrical shape. This asymmetry is directly reflected in transport measurements on molecule-nanoparticle hybrid systems formed by self-assembling a monolayer of mercaptohexanol on the electrode surface and the subsequent dielectrophoretic trapping of 30 nm diameter Au nanoparticles. The observed Coulomb staircase I-V characteristic measured at T = 4.2 K is in excellent agreement with theoretical modelling, whereby junction capacitances of the order of a few 10(-18) farad and asymmetric resistances of 30 and 300 MΩ, respectively, are also supported well by our independent estimates for the formed double barrier tunnelling system. We propose our nanoelectrode system for integrating novel functional electronic devices such as molecular junctions or nanoparticle hybrids into existing silicon microelectronic process technology.

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon

PubMed Central

Makey, Ghaith; Elahi, Parviz; Çolakoğlu, Tahir; Ergeçen, Emre; Yavuz, Özgün; Hübner, René; Borra, Mona Zolfaghari; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ömer

2017-01-01

Silicon is an excellent material for microelectronics and integrated photonics1–3 with untapped potential for mid-IR optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realised with techniques like reactive ion etching. Embedded optical elements, like in glass7, electronic devices, and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1 µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has a different optical index than unmodified parts, which enables numerous photonic devices. Optionally, these parts are chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface, i.e., “in-chip” microstructures for microfluidic cooling of chips, vias, MEMS, photovoltaic applications and photonic devices that match or surpass the corresponding state-of-the-art device performances. PMID:28983323

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon

NASA Astrophysics Data System (ADS)

Tokel, Onur; Turnalı, Ahmet; Makey, Ghaith; Elahi, Parviz; ćolakoǧlu, Tahir; Ergeçen, Emre; Yavuz, Ã.-zgün; Hübner, René; Zolfaghari Borra, Mona; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ã.-mer

2017-10-01

Silicon is an excellent material for microelectronics and integrated photonics1-3, with untapped potential for mid-infrared optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow the fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realized with techniques like reactive ion etching. Embedded optical elements7, electronic devices and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1-µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has an optical index different to that in unmodified parts, enabling the creation of numerous photonic devices. Optionally, these parts can be chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface—that is, `in-chip'—microstructures for microfluidic cooling of chips, vias, micro-electro-mechanical systems, photovoltaic applications and photonic devices that match or surpass corresponding state-of-the-art device performances.

An electric artificial heart for clinical use.

PubMed Central

Pierce, W S; Rosenberg, G; Snyder, A J; Pae, W E; Donachy, J H; Waldhausen, J A

1990-01-01

Advances in microelectronics, high-strength magnets, and control system design now make replacement of the heart using an implantable, electrically powered pump feasible. The device described herein is a compact, dual pusher plate unit with valved polyurethane sac-type ventricles positioned at either end. The power unit consists of a small, brushless direct current motor and a motion translator. A microprocessor control system is used to regulate heart beat rate and provide left-right output balance. Bench studies lasting for as long as 1 year have been performed. Heart replacement with the electric heart has been performed in 18 calves since 1984. The longest survivor lived for more than 7 months. Among the causes of termination were component failure, thromboembolic complications, and bleeding. No major problem has been identified that precludes prolonged use of the electric heart. In the future the patient with end-stage heart disease will have an electric artificial heart as one therapeutic option. Images Figs. 1A and 1B. Fig. 3. Fig. 5. PMID:2396885

Reliability and quality EEE parts issues

NASA Technical Reports Server (NTRS)

Barney, Dan; Feigenbaum, Irwin

1990-01-01

NASA policy and procedures are established which govern the selection, testing, and application of electrical, electronic, and electromechanical (EEE) parts. Recent advances in the state-of-the-art of electronic parts and associated technologies can significantly impact the electronic designs and reliability of NASA space transportation avionics. Significant issues that result from these advances are examined, including: recent advances in microelectronics technology (as applied to or considered for use in NASA projects); electron packaging technology advances (concurrent with, and as a result of, the development of the advanced microelectronic devices); availability of parts used in space avionics; and standardization and integration of parts activities between projects, centers, and contractors.

Fully integrated biochip platforms for advanced healthcare.

PubMed

Carrara, Sandro; Ghoreishizadeh, Sara; Olivo, Jacopo; Taurino, Irene; Baj-Rossi, Camilla; Cavallini, Andrea; de Beeck, Maaike Op; Dehollain, Catherine; Burleson, Wayne; Moussy, Francis Gabriel; Guiseppi-Elie, Anthony; De Micheli, Giovanni

2012-01-01

Recent advances in microelectronics and biosensors are enabling developments of innovative biochips for advanced healthcare by providing fully integrated platforms for continuous monitoring of a large set of human disease biomarkers. Continuous monitoring of several human metabolites can be addressed by using fully integrated and minimally invasive devices located in the sub-cutis, typically in the peritoneal region. This extends the techniques of continuous monitoring of glucose currently being pursued with diabetic patients. However, several issues have to be considered in order to succeed in developing fully integrated and minimally invasive implantable devices. These innovative devices require a high-degree of integration, minimal invasive surgery, long-term biocompatibility, security and privacy in data transmission, high reliability, high reproducibility, high specificity, low detection limit and high sensitivity. Recent advances in the field have already proposed possible solutions for several of these issues. The aim of the present paper is to present a broad spectrum of recent results and to propose future directions of development in order to obtain fully implantable systems for the continuous monitoring of the human metabolism in advanced healthcare applications.

Fully Integrated Biochip Platforms for Advanced Healthcare

PubMed Central

Carrara, Sandro; Ghoreishizadeh, Sara; Olivo, Jacopo; Taurino, Irene; Baj-Rossi, Camilla; Cavallini, Andrea; de Beeck, Maaike Op; Dehollain, Catherine; Burleson, Wayne; Moussy, Francis Gabriel; Guiseppi-Elie, Anthony; De Micheli, Giovanni

2012-01-01

Recent advances in microelectronics and biosensors are enabling developments of innovative biochips for advanced healthcare by providing fully integrated platforms for continuous monitoring of a large set of human disease biomarkers. Continuous monitoring of several human metabolites can be addressed by using fully integrated and minimally invasive devices located in the sub-cutis, typically in the peritoneal region. This extends the techniques of continuous monitoring of glucose currently being pursued with diabetic patients. However, several issues have to be considered in order to succeed in developing fully integrated and minimally invasive implantable devices. These innovative devices require a high-degree of integration, minimal invasive surgery, long-term biocompatibility, security and privacy in data transmission, high reliability, high reproducibility, high specificity, low detection limit and high sensitivity. Recent advances in the field have already proposed possible solutions for several of these issues. The aim of the present paper is to present a broad spectrum of recent results and to propose future directions of development in order to obtain fully implantable systems for the continuous monitoring of the human metabolism in advanced healthcare applications. PMID:23112644

Ultra-doped n-type germanium thin films for sensing in the mid-infrared

PubMed Central

Prucnal, Slawomir; Liu, Fang; Voelskow, Matthias; Vines, Lasse; Rebohle, Lars; Lang, Denny; Berencén, Yonder; Andric, Stefan; Boettger, Roman; Helm, Manfred; Zhou, Shengqiang; Skorupa, Wolfgang

2016-01-01

A key milestone for the next generation of high-performance multifunctional microelectronic devices is the monolithic integration of high-mobility materials with Si technology. The use of Ge instead of Si as a basic material in nanoelectronics would need homogeneous p- and n-type doping with high carrier densities. Here we use ion implantation followed by rear side flash-lamp annealing (r-FLA) for the fabrication of heavily doped n-type Ge with high mobility. This approach, in contrast to conventional annealing procedures, leads to the full recrystallization of Ge films and high P activation. In this way single crystalline Ge thin films free of defects with maximum attained carrier concentrations of 2.20 ± 0.11 × 1020 cm−3 and carrier mobilities above 260 cm2/(V·s) were obtained. The obtained ultra-doped Ge films display a room-temperature plasma frequency above 1,850 cm−1, which enables to exploit the plasmonic properties of Ge for sensing in the mid-infrared spectral range. PMID:27282547

A Figure-of-Merit for Designing High-Performance Inductive Power Transmission Links

PubMed Central

Kiani, Mehdi; Ghovanloo, Maysam

2014-01-01

Power transfer efficiency (PTE) and power delivered to the load (PDL) are two key inductive link design parameters that relate to the power source and driver specs, power loss, transmission range, robustness against misalignment, variations in loading, and interference with other devices. Designers need to strike a delicate balance between these two because designing the link to achieve high PTE will degrade the PDL and vice versa. We are proposing a new figure-of-merit (FoM), which can help designers to find out whether a two-, three-, or four-coil link is appropriate for their particular application and guide them through an iterative design procedure to reach optimal coil geometries based on how they weigh the PTE versus PDL for that application. Three design examples at three different power levels have been presented based on the proposed FoM for implantable microelectronic devices, handheld mobile devices, and electric vehicles. The new FoM suggests that the two-coil links are suitable when the coils are strongly coupled, and a large PDL is needed. Three-coil links are the best when the coils are loosely coupled, the coupling distance varies considerably, and large PDL is necessary. Finally, four-coil links are optimal when the PTE is paramount, the coils are loosely coupled, and their relative distance and alignment are stable. Measurement results support the accuracy of the theoretical design procedure and conclusions. PMID:25382898

Adhesion and failure analysis of metal-polymer interface in flexible printed circuits boards

NASA Astrophysics Data System (ADS)

Park, Sanghee; Kim, Ye Chan; Choi, Kisuk; Chae, Heeyop; Suhr, Jonghwan; Nam, Jae-Do

2017-12-01

As device miniaturization in microelectronics is currently requested in the development of high performance device, which usually include highly-integrated metal-polyimide multilayer structures. A redistribution layer (RDL) process is currently emerging as one of the most advance fabrication techniques for on-chip interconnect and packaging. One of the major issues in this process is the poor adhesion of the metal-polyimide interfaces particularly in flexible circuit boards due to the flexibility and bendability of devices. In this study, low pressure O2 plasma treatment was investigated to improve the adhesion of metal-polyimide interfaces, using inductively coupled plasma (ICP) treatment. We identified that the adhesion of metal-polyimide interfaces was greatly improved by the surface roughness control providing 46.1 MPa of shear force in the ball shear test after O2 plasma treatment, compared 14.2 MPa without O2 plasma treatment. It was seemingly due to the fact that the adhesion in metal-polyimide interfaces was improved by a chemical conversion of C=O to C-O bonds and by a ring opening reaction of imide groups, which was confirmed with FT-IR analysis. In the finite element numerical analysis of metal-polyimide interfaces, the O2 plasma treated interface showed that the in-plane stress distribution and the vertical directional deformation agreed well with real failure modes in flexible circuits manufacturing.

A Figure-of-Merit for Designing High-Performance Inductive Power Transmission Links.

PubMed

Kiani, Mehdi; Ghovanloo, Maysam

2012-11-16

Power transfer efficiency (PTE) and power delivered to the load (PDL) are two key inductive link design parameters that relate to the power source and driver specs, power loss, transmission range, robustness against misalignment, variations in loading, and interference with other devices. Designers need to strike a delicate balance between these two because designing the link to achieve high PTE will degrade the PDL and vice versa. We are proposing a new figure-of-merit (FoM), which can help designers to find out whether a two-, three-, or four-coil link is appropriate for their particular application and guide them through an iterative design procedure to reach optimal coil geometries based on how they weigh the PTE versus PDL for that application. Three design examples at three different power levels have been presented based on the proposed FoM for implantable microelectronic devices, handheld mobile devices, and electric vehicles. The new FoM suggests that the two-coil links are suitable when the coils are strongly coupled, and a large PDL is needed. Three-coil links are the best when the coils are loosely coupled, the coupling distance varies considerably, and large PDL is necessary. Finally, four-coil links are optimal when the PTE is paramount, the coils are loosely coupled, and their relative distance and alignment are stable. Measurement results support the accuracy of the theoretical design procedure and conclusions.

Advanced packaging for Integrated Micro-Instruments

NASA Technical Reports Server (NTRS)

Lyke, James L.

1995-01-01

The relationship between packaging, microelectronics, and micro-electrical-mechanical systems (MEMS) is an important one, particularly when the edges of performance boundaries are pressed, as in the case of miniaturized systems. Packaging is a sort of physical backbone that enables the maximum performance of these systems to be realized, and the penalties imposed by conventional packing approaches is particularly limiting for MEMS devices. As such, advanced packaging approaches, such as multi-chip modules (MCM's) have been touted as a true means of electronic 'enablement' for a variety of application domains. Realizing an optimum system of packaging, however, in not as simple as replacing a set of single chip packages with a substrate of interconnections. Research at Phillips Laboratory has turned up a number of integrating options in the two- and three-dimensional rending of miniature systems with physical interconnection structures with intrinsically high performance. Not only do these structures motivate the redesign of integrated circuits (IC's) for lower power, but they possess interesting features that provide a framework for the direct integration of MEMS devices. Cost remains a barrier to the application of MEMS devices, even in space systems. Several innovations are suggested that will result in lower cost and more rapid cycle time. First, the novelty of a 'constant floor plan' MCM which encapsulates a variety of commonly used components into a stockable, easily customized assembly is discussed. Next, the use of low-cost substrates is examined. The anticipated advent of ultra-high density interconnect (UHDI) is suggested as the limit argument of advanced packaging. Finally, the concept of a heterogeneous 3-D MCM system is outlined that allows for the combination of different compatible packaging approaches into a uniformly dense structure that could also include MEMS-based sensors.

Architectures for Improved Organic Semiconductor Devices

NASA Astrophysics Data System (ADS)

Beck, Jonathan H.

Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes, semiconductors and substrates compatible with low-temperature, flexible, and oxygenated and aromatic solvent-free fabrication. Materials and processes must be capable of future high volume production in order to enable low costs. In this thesis we explore several techniques to improve organic semiconductor device performance and enable new fabrication processes. In Chapter 2, I describe the integration of sub-optical-wavelength nanostructured electrodes that improve fill factor and power conversion efficiency in organic photovoltaic devices. Photovoltaic fill factor performance is one of the primary challenges facing organic photovoltaics because most organic semiconductors have poor charge mobility. Our electrical and optical measurements and simulations indicate that nanostructured electrodes improve charge extraction in organic photovoltaics. In Chapter 3, I describe a general method for maximizing the efficiency of organic photovoltaic devices by simultaneously optimizing light absorption and charge carrier collection. We analyze the potential benefits of light trapping strategies for maximizing the overall power conversion efficiency of organic photovoltaic devices. This technique may be used to improve organic photovoltaic materials with low absorption, or short exciton diffusion and carrier-recombination lengths, opening up the device design space. In Chapter 4, I describe a process for high-quality graphene transfer onto chemically sensitive, weakly interacting organic semiconductor thin-films. Graphene is a promising flexible and highly transparent electrode for organic electronics; however, transferring graphene films onto organic semiconductor devices was previously impossible. We demonstrate a new transfer technique based on an elastomeric stamp coated with an fluorinated polymer release layer. We fabricate three classes of organic semiconductor devices: field effect transistors without high temperature annealing, transparent organic light-emitting diodes, and transparent small-molecule organic photovoltaic devices.

Microelectronic Stimulator Array

DTIC Science & Technology

2000-08-09

narrow, flexible micro-cable 36. The micro-cable 36 is approximately six inches in length and is custom made using gold leads patterned on polyimide ...neural prosthesis device is biocompatibility and safety. Because the duration of any tests with the retinal prosthesis test device 30 are very short...less than an hour), biocompatibility issues are primarily reduced to acute effects of the testing and need not address the more difficult chronic

NASA Electronic Parts and Packaging (NEPP) Program

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Sampson, Michael J.

2008-01-01

This viewgraph presentation reviews NASA's Electronic Parts and Packaging (NEPP) Program. The NEPP mission is to provide guidance to NASA for the selection and and application of microelectronics technologies, to improve understanding of the risks related to the use of these technologies in the space environment and to ensure that appropriate research is performed to meet NASA mission needs. The NEPP Program focuses on the reliability aspects of electronic devices. Three principal aspects to this reliability: (1) lifetime, (2) effects of space radiation and the space environment, and (3) creation and maintenance of the assurance support infrastructure required for success.

Application of analytical redundancy management to Shuttle crafts. [computerized simulation of microelectronic implementation

NASA Technical Reports Server (NTRS)

Montgomery, R. C.; Tabak, D.

1979-01-01

The study involves the bank of filters approach to analytical redundancy management since this is amenable to microelectronic implementation. Attention is given to a study of the UD factorized filter to determine if it gives more accurate estimates than the standard Kalman filter when data processing word size is reduced. It is reported that, as the word size is reduced, the effect of modeling error dominates the filter performance of the two filters. However, the UD filter is shown to maintain a slight advantage in tracking performance. It is concluded that because of the UD filter's stability in the serial processing mode, it remains the leading candidate for microelectronic implementation.

Memory device using movement of protons

DOEpatents

Warren, W.L.; Vanheusden, K.J.R.; Fleetwood, D.M.; Devine, R.A.B.

1998-11-03

An electrically written memory element is disclosed utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element. 19 figs.

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

1998-01-01

An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

2000-01-01

An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

Microsystem technology as a road from macro to nanoworld.

PubMed

Grabiec, Piotr; Domański, Krzysztof; Janus, Paweł; Zaborowski, Michał; Jaroszewicz, Bogdan

2005-04-01

Tremendous progress of microelectronic technology observed within last 40 years is closely related to even more remarkable progress of technological tools. It is important to note however, that these new tools may be used for fabrication of diverse multifunctional structures as well. Such devices, called MEMS (Micro-Electro-Mechanical-System) and MOEMS (Micro-Electro-Opto-Mechanical-System) integrate microelectronic and micromechanical structures in one system enabling interdisciplinary application, with most interesting and prospective being bio-medical investigations. Development of these applications requires however cooperation of multidisciplinary team of specialists, covering broad range of physics, (bio) chemistry and electronics, not mentioning medical doctors and other medical specialists. Thus, dissemination, of knowledge about existing processing capabilities is of key importance. In this paper, examples of various applications of microelectronic technology for fabrication of Microsystems which may be used for medicine and chemistry, will be presented. Besides, information concerning a design and technology potential available in poland and new, emerging opportunities will be given.

Thermal Conduction in Vertically Aligned Copper Nanowire Arrays and Composites.

PubMed

Barako, Michael T; Roy-Panzer, Shilpi; English, Timothy S; Kodama, Takashi; Asheghi, Mehdi; Kenny, Thomas W; Goodson, Kenneth E

2015-09-02

The ability to efficiently and reliably transfer heat between sources and sinks is often a bottleneck in the thermal management of modern energy conversion technologies ranging from microelectronics to thermoelectric power generation. These interfaces contribute parasitic thermal resistances that reduce device performance and are subjected to thermomechanical stresses that degrade device lifetime. Dense arrays of vertically aligned metal nanowires (NWs) offer the unique combination of thermal conductance from the constituent metal and mechanical compliance from the high aspect ratio geometry to increase interfacial heat transfer and device reliability. In the present work, we synthesize copper NW arrays directly onto substrates via templated electrodeposition and extend this technique through the use of a sacrificial overplating layer to achieve improved uniformity. Furthermore, we infiltrate the array with an organic phase change material and demonstrate the preservation of thermal properties. We use the 3ω method to measure the axial thermal conductivity of freestanding copper NW arrays to be as high as 70 W m(-1) K(-1), which is more than an order of magnitude larger than most commercial interface materials and enhanced-conductivity nanocomposites reported in the literature. These arrays are highly anisotropic, and the lateral thermal conductivity is found to be only 1-2 W m(-1) K(-1). We use these measured properties to elucidate the governing array-scale transport mechanisms, which include the effects of morphology and energy carrier scattering from size effects and grain boundaries.

A high-throughput, multi-channel photon-counting detector with picosecond timing

NASA Astrophysics Data System (ADS)

Lapington, J. S.; Fraser, G. W.; Miller, G. M.; Ashton, T. J. R.; Jarron, P.; Despeisse, M.; Powolny, F.; Howorth, J.; Milnes, J.

2009-06-01

High-throughput photon counting with high time resolution is a niche application area where vacuum tubes can still outperform solid-state devices. Applications in the life sciences utilizing time-resolved spectroscopies, particularly in the growing field of proteomics, will benefit greatly from performance enhancements in event timing and detector throughput. The HiContent project is a collaboration between the University of Leicester Space Research Centre, the Microelectronics Group at CERN, Photek Ltd., and end-users at the Gray Cancer Institute and the University of Manchester. The goal is to develop a detector system specifically designed for optical proteomics, capable of high content (multi-parametric) analysis at high throughput. The HiContent detector system is being developed to exploit this niche market. It combines multi-channel, high time resolution photon counting in a single miniaturized detector system with integrated electronics. The combination of enabling technologies; small pore microchannel plate devices with very high time resolution, and high-speed multi-channel ASIC electronics developed for the LHC at CERN, provides the necessary building blocks for a high-throughput detector system with up to 1024 parallel counting channels and 20 ps time resolution. We describe the detector and electronic design, discuss the current status of the HiContent project and present the results from a 64-channel prototype system. In the absence of an operational detector, we present measurements of the electronics performance using a pulse generator to simulate detector events. Event timing results from the NINO high-speed front-end ASIC captured using a fast digital oscilloscope are compared with data taken with the proposed electronic configuration which uses the multi-channel HPTDC timing ASIC.

An optical relay approach to very low cost hybrid polymer-complementary metal-oxide semiconductor electrophoresis instrumentation.

PubMed

Hall, Gordon H; Sloan, David L; Ma, Tianchi; Couse, Madeline H; Martel, Stephane; Elliott, Duncan G; Glerum, D Moira; Backhouse, Christopher J

2014-07-04

Electrophoresis is an integral part of many molecular diagnostics protocols and an inexpensive implementation would greatly facilitate point-of-care (POC) applications. However, the high instrumentation cost presents a substantial barrier, much of it associated with fluorescence detection. The cost of such systems could be substantially reduced by placing the fluidic channel and photodiode directly above the detector in order to collect a larger portion of the fluorescent light. In future, this could be achieved through the integration and monolithic fabrication of photoresist microchannels on complementary metal-oxide semiconductor microelectronics (CMOS). However, the development of such a device is expensive due to high non-recurring engineering costs. To facilitate that development, we present a system that utilises an optical relay to integrate low-cost polymeric microfluidics with a CMOS chip that provides a photodiode, analog-digital conversion and a standard serial communication interface. This system embodies an intermediate level of microelectronic integration, and significantly decreases development costs. With a limit of detection of 1.3±0.4nM of fluorescently end-labeled deoxyribonucleic acid (DNA), it is suitable for diagnostic applications. Copyright © 2014 Elsevier B.V. All rights reserved.

Nanotechnology: MEMS and NEMS and their applications to smart systems and devices

NASA Astrophysics Data System (ADS)

Varadan, Vijay K.

2003-10-01

The microelectronics industry has seen explosive growth during the last thirty years. Extremely large markets for logic and memory devices have driven the development of new materials, and technologies for the fabrication of even more complex devices with features sizes now down at the sub micron and nanometer level. Recent interest has arisen in employing these materials, tools and technologies for the fabrication of miniature sensors and actuators and their integration with electronic circuits to produce smart devices and systems. This effort offers the promise of: (1) increasing the performance and manufacturability of both sensors and actuators by exploiting new batch fabrication processes developed including micro stereo lithographic and micro molding techniques; (2) developing novel classes of materials and mechanical structures not possible previously, such as diamond like carbon, silicon carbide and carbon nanotubes, micro-turbines and micro-engines; (3) development of technologies for the system level and wafer level integration of micro components at the nanometer precision, such as self-assembly techniques and robotic manipulation; (4) development of control and communication systems for MEMS devices, such as optical and RF wireless, and power delivery systems, etc. A novel composite structure can be tailored by functionalizing carbon nano tubes and chemically bonding them with the polymer matrix e.g. block or graft copolymer, or even cross-linked copolymer, to impart exceptional structural, electronic and surface properties. Bio- and Mechanical-MEMS devices derived from this hybrid composite provide a new avenue for future smart systems. The integration of NEMS (NanoElectroMechanical Systems), MEMS, IDTs (Interdigital Transducers) and required microelectronics and conformal antenna in the multifunctional smart materials and composites results in a smart system suitable for sending and control of a variety functions in automobile, aerospace, marine and civil strutures and food and medical industries. This unique combination of technologies also results in novel conformal sensors that can be remotely sensed by an antenna system with the advantage of no power requirements at the sensor site. This paper provides a brief review of MEMS and NEMS based smart systems for various applications mentioned above. Carbon Nano Tubes (CNT) with their unique structure, have already proven to be valuable in their application as tips for scanning probe microscopy, field emission devices, nanoelectronics, H2-storage, electromagnetic absorbers, ESD, EMI films and coatings and structural composites. For many of these applications, highly purified and functionalized CNT which are compatible with many host polymers are needed. A novel microwave CVD processing technique to meet these requirements has been developed at Penn State Center for the Engineering of Electronic and Acoustic Materials and Devices (CEEAMD). This method enables the production of highly purified carbon nano tubes with variable size (from 5 - 40 nm) at low cost (per gram) and high yield. Whereas, carbon nano tubes synthesized using the laser ablation or arc discharge evaporation method always include impurity due to catalyst or catalyst support. The Penn State research is based on the use of zeolites over other metal/metal oxides in the microwave field for a high production and uniformity of the product. An extended coventional purification method has been employed to purify our products in order to remove left over impurity. A novel composite structure can be tailored by functionalizing carbon nano tubes and chemically bonding them with the polymer matrix e.g. block or graft copolymer, or even cross-linked copolymer, to impart exceptional structural, electronic and surface properties. Bio- and Mechanical-MEMS devices derived from this hybrid composites will be presented.

MEMS- and NEMS-based smart devices and systems

NASA Astrophysics Data System (ADS)

Varadan, Vijay K.

2001-11-01

The microelectronics industry has seen explosive growth during the last thirty years. Extremely large markets for logic and memory devices have driven the development of new materials, and technologies for the fabrication of even more complex devices with features sized now don at the sub micron and nanometer level. Recent interest has arisen in employing these materials, tools and technologies for the fabrication of miniature sensors and actuators and their integration with electronic circuits to produce smart devices and systems. This effort offers the promise of: 1) increasing the performance and manufacturability of both sensors and actuators by exploiting new batch fabrication processes developed including micro stereo lithographic an micro molding techniques; 2) developing novel classes of materials and mechanical structures not possible previously, such as diamond like carbon, silicon carbide and carbon nanotubes, micro-turbines and micro-engines; 3) development of technologies for the system level and wafer level integration of micro components at the nanometer precision, such as self-assembly techniques and robotic manipulation; 4) development of control and communication systems for MEMS devices, such as optical and RF wireless, and power delivery systems, etc. A novel composite structure can be tailored by functionalizing carbon nano tubes and chemically bonding them with the polymer matrix e.g. block or graft copolymer, or even cross-linked copolymer, to impart exceptional structural, electronic and surface properties. Bio- and Mechanical-MEMS devices derived from this hybrid composite provide a new avenue for future smart systems. The integration of NEMS (NanoElectroMechanical Systems), MEMS, IDTs (Interdigital Transducers) and required microelectronics and conformal antenna in the multifunctional smart materials and composites results in a smart system suitable for sensing and control of a variety functions in automobile, aerospace, marine and civil structures and food and medical industries. This unique combination of technologies also results in novel conformal sensors that can be remotely sensed by an antenna system with the advantage of no power requirements at the sensor site. This paper provides a brief review of MEMS and NEMS based smart systems for various applications mentioned above. Carbon Nano Tubes (CNT) with their unique structure, have already proven to be valuable in their application as tips for scanning probe microscopy, field emission devices, nanoelectronics, H2-storage, electromagnetic absorbers, ESD, EMI films and coatings and structural composites. For many of these applications, highly purified and functionalized CNT which are compatible with many host polymers are needed. A novel microwave CVD processing technique to meet these requirements has been developed at Penn State Center for the engineering of Electronic and Acoustic Materials and Devices (CEEAMD). This method enables the production of highly purified carbon nano tubes with variable size (from 5-40 nm) at low cost (per gram) and high yield. Whereas, carbon nano tubes synthesized using the laser ablation or arc discharge evaporation method always include impurity due to catalyst or catalyst support. The Penn State research is based on the use of zeolites over other metal/metal oxides in the microwave field for a high production and uniformity of the product. An extended conventional purification method has been employed to purify our products in order to remove left over impurity. A novel composite structure can be tailored by functionalizing carbon nano tubes and chemically bonding them with the polymer matrix e.g. block or graft copolymer, or even cross- linked copolymer, to impart exceptional structural, electronic and surface properties. Bio- and Mechanical-MEMS devices derived from this hybrid composites will be presented.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mandal, Suman, E-mail: suman.mandal@sscu.iisc.ernet.in; Pal, Somnath; Hazarika, Abhijit

Topical observations of colossal permittivity (CP) with low dielectric loss in donor-acceptor cations co-doped rutile TiO{sub 2} have opened up several possibilities in microelectronics and energy-storage devices. Yet, the precise origin of the CP behavior, knowledge of which is essential to empower the device integration suitably, is highly disputed in the literature. From spectromicroscopic approach besides dielectric measurements, we explore that microscopic electronic inhomogeneities along with the nano-scale phase boundaries and the low temperature polaronic relaxation are mostly responsible for such a dielectric behavior, rather than electron-pinned defect-dipoles/grain-boundary effects as usually proposed. Donor-acceptor co-doping results in a controlled carrier-hopping inevitablymore » influencing the dielectric loss while invariably upholding the CP value.« less

Waste-to-energy conversion from a microfluidic device

NASA Astrophysics Data System (ADS)

López-González, B.; Jiménez-Valdés, R. J.; Moreno-Zuria, A.; Cuevas-Muñiz, F. M.; Ledesma-García, J.; García-Cordero, J. L.; Arriaga, L. G.

2017-08-01

This work reports the successful harvesting of energy from waste produced in a microfluidic device using a fuel cell. A miniaturized glucose air-breathing microfluidic fuel cell (ABμFFC) was designed, fabricated and tested with three different configurations according to their electrode nature: inorganic, hybrid and biofuel cell. Each ABμFFC was characterized using an ideal medium, with sterile cell culture medium, and with waste produced on a microfluidic device. The inorganic-ABμFFC exhibited the highest performance compared to the rest of the configurations. As a proof-of-concept, cancer cells were cultured on a microfluidic device and the consumed cell culture media (glucose concentration <11 mM) was used as an energy source without further treatment, into the inorganic-ABμFFC. The fuel cell generated a maximum total power of 5.2 μW, which is enough energy to power low-consumption microelectronic chips. This application demonstrates that the waste produced by microfluidic applications could be potentially scavenged to produce electrical energy. It also opens the possibility to develop truly energy self-sufficient portable devices.

All-inkjet-printed thin-film transistors: manufacturing process reliability by root cause analysis.

PubMed

Sowade, Enrico; Ramon, Eloi; Mitra, Kalyan Yoti; Martínez-Domingo, Carme; Pedró, Marta; Pallarès, Jofre; Loffredo, Fausta; Villani, Fulvia; Gomes, Henrique L; Terés, Lluís; Baumann, Reinhard R

2016-09-21

We report on the detailed electrical investigation of all-inkjet-printed thin-film transistor (TFT) arrays focusing on TFT failures and their origins. The TFT arrays were manufactured on flexible polymer substrates in ambient condition without the need for cleanroom environment or inert atmosphere and at a maximum temperature of 150 °C. Alternative manufacturing processes for electronic devices such as inkjet printing suffer from lower accuracy compared to traditional microelectronic manufacturing methods. Furthermore, usually printing methods do not allow the manufacturing of electronic devices with high yield (high number of functional devices). In general, the manufacturing yield is much lower compared to the established conventional manufacturing methods based on lithography. Thus, the focus of this contribution is set on a comprehensive analysis of defective TFTs printed by inkjet technology. Based on root cause analysis, we present the defects by developing failure categories and discuss the reasons for the defects. This procedure identifies failure origins and allows the optimization of the manufacturing resulting finally to a yield improvement.

Self-Assembly of Nanostructured Electronic Devices (454th Brookhaven Lecture)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Black, Charles

2009-12-16

Given suitable atmospheric conditions, water vapor from the air will crystallize into beautiful structures: snowflakes. Nature provides many other examples of spontaneous organization of materials into regular patterns, which is a process known as self-assembly. Since self-assembly works at all levels, it can be a useful tool for organizing materials on the nanometer scale. In particular, self-assembly provides a precise method for designing materials with improved electronic properties, thereby enabling advances in semiconductor electronics and solar devices. On Wednesday, December 16, at 4 p.m. in Berkner Hall, Charles Black of the Center for Functional Nanomaterials (CFN) will explore this topicmore » during the 454th Brookhaven Lecture, entitled “Self-Assembly of Nanostructured Electronic Devices.” Refreshments will be offered before and after the lecture. To attend this open-to-the-public event, visitors to the Lab ages 16 and older must present photo ID at the Main Gate. During this talk, Dr. Black will discuss examples of how self-assembly is being integrated into semiconductor microelectronics, as advances in the ability to define circuit elements at higher resolution have fueled more than 40 years of performance improvements. Self-assembly also promises advances in the performance of solar devices; thus he will describe his group’s recent results with nanostructured photovoltaic devices.« less

Dry etching of metallization

NASA Technical Reports Server (NTRS)

Bollinger, D.

1983-01-01

The production dry etch processes are reviewed from the perspective of microelectronic fabrication applications. The major dry etch processes used in the fabrication of microelectronic devices can be divided into two categories - plasma processes in which samples are directly exposed to an electrical discharge, and ion beam processes in which samples are etched by a beam of ions extracted from a discharge. The plasma etch processes can be distinguished by the degree to which ion bombardment contributes to the etch process. This, in turn is related to capability for anisotropic etching. Reactive Ion Etching (RIE) and Ion Beam Etching are of most interest for etching of thin film metals. RIE is generally considered the best process for large volume, anisotropic aluminum etching.

Design, fabrication, and characterization of 4H-silicon carbide rectifiers for power switching applications

NASA Astrophysics Data System (ADS)

Sheridan, David Charles

Silicon Carbide has received a substantial increase in research interest over the past few years as a base material system for high-frequency and high-power semiconductor devices. Of the over 1200 polytypes, 4H-SiC is the most attractive polytype for power devices due to its wide band gap (3.2eV), excellent thermal conductivity (4.9 W/cm·K), and high critical field strength (˜2 x 106 V/cm). Important for power devices, the 10x increase in critical field strength of SiC allows high voltage blocking layers to be fabricated significantly thinner than for comparable Si devices. For power rectifiers, this reduces device on-resistance, while maintaining the same high voltage blocking capability. In this work, 4H-SiC Schottky, pn, and junction barrier Schottky (JBS) rectifiers for use in high voltage switching applications have been designed, fabricated, and extensively characterized. First, a detailed review of 4H-SiC material parameters was performed and SiC models were implemented into a standard Si drift-diffusion numerical simulator. Using these models, a SiC simulation methodology was developed in order to enable predictive SiC device design. A wide variety of rectifier and edge termination designs were investigated and optimized with respect to breakdown efficiency, area consumption, resistance to interface charge, and fabrication practicality. Simulated termination methods include: field plates, floating guard rings, and a variety of junction termination extensions (JTE). Using the device simulation results, both Schottky and JBS rectifiers were fabricated with a novel self-aligned edge termination design, and fabricated with process elements developed at the Alabama Microelectronics Science and Technology Center facility. These rectifiers exhibited near-ideal forward characteristics and had blocking voltages in excess of 2.5kV. The SiC diodes were subjected to inductive switching tests, and were found to have superior reverse recovery characteristics compared to a similar Si diode. Finally, the performance of these SiC rectifiers were tested in inductive switching circuits and in high dose gamma radiation environments. In both cases, these devices were shown to be superior to their silicon counterparts. The details of this work was presented and published in the proceedings of the 45th International Meeting of the American Vacuum Society [1], the 1999 International Conference on Silicon Carbide and Related Materials [2, 3] and the 2000 European Conference on Silicon Carbide and Related Materials [4]. The expanded conference papers were published in the international journal. Solid-State Electronics [5, 6].

Applicability of microelectronic and mechanical systems (MEMS) for transportation infrastructure management.

DOT National Transportation Integrated Search

2008-08-11

It will be advantageous to have information on the state of health of infrastructure at all times in : order to carry out effective on-demand maintenance. With the tremendous advancement in technology, it is : possible to employ devices embedded in s...

Innovations in microelectronics and solid state at North Carolina Agricultural and Technical State University

NASA Technical Reports Server (NTRS)

Williams, L., Jr.

1977-01-01

Research in the following areas is described: (1) Characterization and applications of metallic oxide devices; (2) Electronic properties and energy conversion in organic amorphous semiconductors; (3) Material growth and characterization directed toward improving 3-5 heterojunction solar cells.

Analysis of quantum semiconductor heterostructures by ballistic electron emission spectroscopy

NASA Astrophysics Data System (ADS)

Guthrie, Daniel K.

1998-09-01

The microelectronics industry is diligently working to achieve the goal of gigascale integration (GSI) by early in the 21st century. For the past twenty-five years, progress toward this goal has been made by continually scaling down device technology. Unfortunately, this trend cannot continue to the point of producing arbitrarily small device sizes. One possible solution to this problem that is currently under intensive study is the relatively new area of quantum devices. Quantum devices represent a new class of microelectronic devices that operate by utilizing the wave-like nature (reflection, refraction, and confinement) of electrons together with the laws of quantum mechanics to construct useful devices. One difficulty associated with these structures is the absence of measurement techniques that can fully characterize carrier transport in such devices. This thesis addresses this need by focusing on the study of carrier transport in quantum semiconductor heterostructures using a relatively new and versatile measurement technique known as ballistic electron emission spectroscopy (BEES). To achieve this goal, a systematic approach that encompasses a set of progressively more complex structures is utilized. First, the simplest BEES structure possible, the metal/semiconductor interface, is thoroughly investigated in order to provide a foundation for measurements on more the complex structures. By modifying the semiclassical model commonly used to describe the experimental BEES spectrum, a very complete and accurate description of the basic structure has been achieved. Next, a very simple semiconductor heterostructure, a Ga1-xAlxAs single-barrier structure, was measured and analyzed. Low-temperature measurements on this structure were used to investigate the band structure and electron-wave interference effects in the Ga1-xAlxAs single barrier structure. These measurements are extended to a simple quantum device by designing, measuring, and analyzing a set of complementary electron-wave Fabry-Perot quantum interference filters which included both a half- and a quarter-electron-wavelength resonant device. High-resolution, low noise, BEES spectra obtained on these devices at low-temperature were used to measure the zero-bias electron transmittance as a function of injected energy for these resonant devices. Finally, by analyzing BEES spectra taken at various spatial locations, one monolayer variations in the thickness of a buried quantum well have been detected.

A microelectronics approach for the ROSETTA surface science package

NASA Technical Reports Server (NTRS)

Sandau, Rainer (Editor); Alkalaj, Leon

1996-01-01

In relation to the Rosetta surface science package, the benefits of the application of advanced microelectronics packaging technologies and other output from the Mars environmental survey (MESUR) integrated microelectronics study are reported on. The surface science package will be designed to operate for tens of hours. Its limited mass and power consumption make necessary a highly integrated design with all the instruments and subunits operated from a centralized control and information management subsystem.

Impact of radiations on the electromechanical properties of materials and on the piezoresistive and capacitive transduction mechanisms used in microsystems

NASA Astrophysics Data System (ADS)

Francis, Laurent A.; Gkotsis, Petros; Kilchytska, Valeriya; Tang, Xiaohui; Druart, Sylvain; Raskin, Jean-Pierre; Flandre, Denis

2013-03-01

The impact of different types of radiation on the electromechanical properties of materials used in microfabrication and on the capacitive and piezoresistive transduction mechanisms of MEMS is investigated. MEMS technologies could revolutionize avionics, satellite and space applications provided that the stress conditions which can compromise the reliability of microsystems in these environments are well understood. Initial tests with MEMS revealed a vulnerability of some types of devices to radiation induced dielectric charging, a physical mechanism which also affects microelectronics, however integration of novel functional materials in microfabrication and the current trend to substitute SiO2 with high-k dielectrics in ICs pose new questions regarding reliability in radiation environments. The performance of MEMS devices with moving parts could also degrade due to radiation induced changes in the mechanical properties of the materials. It is thus necessary to investigate the effects of radiation on the properties of thin films used in microfabrication and here we report on tests with γ, high energy protons and fast neutrons radiation. Prototype SOI based MEMS magnetometers which were developed in UCL are also used as test vehicles to investigate radiation effects on the reliability of magnetically actuated and capacitively coupled MEMS.

Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber

NASA Technical Reports Server (NTRS)

Routh, D. E.; Sharma, G. C. (Inventor)

1982-01-01

The processing of wafer devices to form multilevel interconnects for microelectronic circuits is described. The method is directed to performing the sequential steps of etching the via, removing the photo resist pattern, back sputtering the entire wafer surface and depositing the next layer of interconnect material under common vacuum conditions without exposure to atmospheric conditions. Apparatus for performing the method includes a vacuum system having a vacuum chamber in which wafers are processed on rotating turntables. The vacuum chamber is provided with an RF sputtering system and a DC magnetron sputtering system. A gas inlet is provided in the chamber for the introduction of various gases to the vacuum chamber and the creation of various gas plasma during the sputtering steps.

Radiation Testing, Characterization and Qualification Challenges for Modern Microelectronics and Photonics Devices and Technologies

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Cohn, Lewis M.

2008-01-01

At GOMAC 2007, we discussed a selection of the challenges for radiation testing of modern semiconductor devices focusing on state-of-the-art memory technologies. This included FLASH non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs). In this presentation, we extend this discussion in device packaging and complexity as well as single event upset (SEU) mechanisms using several technology areas as examples including: system-on-a-chip (SOC) devices and photonic or fiber optic systems. The underlying goal is intended to provoke thought for understanding the limitations and interpretation of radiation testing results.

Work and Programmable Automation.

ERIC Educational Resources Information Center

DeVore, Paul W.

A new industrial era based on electronics and the microprocessor has arrived, an era that is being called intelligent automation. Intelligent automation, in the form of robots, replaces workers, and the new products, using microelectronic devices, require significantly less labor to produce than the goods they replace. The microprocessor thus…

Nuclear fragmentation studies for microelectronic application

NASA Technical Reports Server (NTRS)

Ngo, Duc M.; Wilson, John W.; Buck, Warren W.; Fogarty, Thomas N.

1989-01-01

A formalism for target fragment transport is presented with application to energy loss spectra in thin silicon devices. Predicted results are compared to experiments with the surface barrier detectors of McNulty et al. The intranuclear cascade nuclear reaction model does not predict the McNulty experimental data for the highest energy events. A semiempirical nuclear cross section gives an adequate explanation of McNulty's experiments. Application of the formalism to specific electronic devices is discussed.

Femtosecond laser three-dimensional micro- and nanofabrication

NASA Astrophysics Data System (ADS)

Sugioka, Koji; Cheng, Ya

2014-12-01

The rapid development of the femtosecond laser has revolutionized materials processing due to its unique characteristics of ultrashort pulse width and extremely high peak intensity. The short pulse width suppresses the formation of a heat-affected zone, which is vital for ultrahigh precision fabrication, whereas the high peak intensity allows nonlinear interactions such as multiphoton absorption and tunneling ionization to be induced in transparent materials, which provides versatility in terms of the materials that can be processed. More interestingly, irradiation with tightly focused femtosecond laser pulses inside transparent materials makes three-dimensional (3D) micro- and nanofabrication available due to efficient confinement of the nonlinear interactions within the focal volume. Additive manufacturing (stereolithography) based on multiphoton absorption (two-photon polymerization) enables the fabrication of 3D polymer micro- and nanostructures for photonic devices, micro- and nanomachines, and microfluidic devices, and has applications for biomedical and tissue engineering. Subtractive manufacturing based on internal modification and fabrication can realize the direct fabrication of 3D microfluidics, micromechanics, microelectronics, and photonic microcomponents in glass. These microcomponents can be easily integrated in a single glass microchip by a simple procedure using a femtosecond laser to realize more functional microdevices, such as optofluidics and integrated photonic microdevices. The highly localized multiphoton absorption of a tightly focused femtosecond laser in glass can also induce strong absorption only at the interface of two closely stacked glass substrates. Consequently, glass bonding can be performed based on fusion welding with femtosecond laser irradiation, which provides the potential for applications in electronics, optics, microelectromechanical systems, medical devices, microfluidic devices, and small satellites. This review paper describes the concepts and principles of femtosecond laser 3D micro- and nanofabrication and presents a comprehensive review on the state-of-the-art, applications, and the future prospects of this technology.

Femtosecond laser three-dimensional micro- and nanofabrication

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sugioka, Koji, E-mail: ksugioka@riken.jp; Cheng, Ya, E-mail: ya.cheng@siom.ac.cn

2014-12-15

The rapid development of the femtosecond laser has revolutionized materials processing due to its unique characteristics of ultrashort pulse width and extremely high peak intensity. The short pulse width suppresses the formation of a heat-affected zone, which is vital for ultrahigh precision fabrication, whereas the high peak intensity allows nonlinear interactions such as multiphoton absorption and tunneling ionization to be induced in transparent materials, which provides versatility in terms of the materials that can be processed. More interestingly, irradiation with tightly focused femtosecond laser pulses inside transparent materials makes three-dimensional (3D) micro- and nanofabrication available due to efficient confinement ofmore » the nonlinear interactions within the focal volume. Additive manufacturing (stereolithography) based on multiphoton absorption (two-photon polymerization) enables the fabrication of 3D polymer micro- and nanostructures for photonic devices, micro- and nanomachines, and microfluidic devices, and has applications for biomedical and tissue engineering. Subtractive manufacturing based on internal modification and fabrication can realize the direct fabrication of 3D microfluidics, micromechanics, microelectronics, and photonic microcomponents in glass. These microcomponents can be easily integrated in a single glass microchip by a simple procedure using a femtosecond laser to realize more functional microdevices, such as optofluidics and integrated photonic microdevices. The highly localized multiphoton absorption of a tightly focused femtosecond laser in glass can also induce strong absorption only at the interface of two closely stacked glass substrates. Consequently, glass bonding can be performed based on fusion welding with femtosecond laser irradiation, which provides the potential for applications in electronics, optics, microelectromechanical systems, medical devices, microfluidic devices, and small satellites. This review paper describes the concepts and principles of femtosecond laser 3D micro- and nanofabrication and presents a comprehensive review on the state-of-the-art, applications, and the future prospects of this technology.« less

Current rectifying and resistive switching in high density BiFeO3 nanocapacitor arrays on Nb-SrTiO3 substrates

PubMed Central

Zhao, Lina; Lu, Zengxing; Zhang, Fengyuan; Tian, Guo; Song, Xiao; Li, Zhongwen; Huang, Kangrong; Zhang, Zhang; Qin, Minghui; SujuanWu; Lu, Xubing; Zeng, Min; Gao, Xingsen; Dai, Jiyan; Liu, Jun-Ming

2015-01-01

Ultrahigh density well-registered oxide nanocapacitors are very essential for large scale integrated microelectronic devices. We report the fabrication of well-ordered multiferroic BiFeO3 nanocapacitor arrays by a combination of pulsed laser deposition (PLD) method and anodic aluminum oxide (AAO) template method. The capacitor cells consist of BiFeO3/SrRuO3 (BFO/SRO) heterostructural nanodots on conductive Nb-doped SrTiO3 (Nb-STO) substrates with a lateral size of ~60 nm. These capacitors also show reversible polarization domain structures, and well-established piezoresponse hysteresis loops. Moreover, apparent current-rectification and resistive switching behaviors were identified in these nanocapacitor cells using conductive-AFM technique, which are attributed to the polarization modulated p-n junctions. These make it possible to utilize these nanocapacitors in high-density (>100 Gbit/inch2) nonvolatile memories and other oxide nanoelectronic devices. PMID:25853937

Smart substrates: Making multi-chip modules smarter

NASA Astrophysics Data System (ADS)

Wunsch, T. F.; Treece, R. K.

1995-05-01

A novel multi-chip module (MCM) design and manufacturing methodology which utilizes active CMOS circuits in what is normally a passive substrate realizes the 'smart substrate' for use in highly testable, high reliability MCMS. The active devices are used to test the bare substrate, diagnose assembly errors or integrated circuit (IC) failures that require rework, and improve the testability of the final MCM assembly. A static random access memory (SRAM) MCM has been designed and fabricated in Sandia Microelectronics Development Laboratory in order to demonstrate the technical feasibility of this concept and to examine design and manufacturing issues which will ultimately determine the economic viability of this approach. The smart substrate memory MCM represents a first in MCM packaging. At the time the first modules were fabricated, no other company or MCM vendor had incorporated active devices in the substrate to improve manufacturability and testability, and thereby improve MCM reliability and reduce cost.

Biochips Containing Arrays of Carbon-Nanotube Electrodes

NASA Technical Reports Server (NTRS)

Li, Jun; Meyyappan, M.; Koehne, Jessica; Cassell, Alan; Chen, Hua

2008-01-01

Biochips containing arrays of nanoelectrodes based on multiwalled carbon nanotubes (MWCNTs) are being developed as means of ultrasensitive electrochemical detection of specific deoxyribonucleic acid (DNA) and messenger ribonucleic acid (mRNA) biomarkers for purposes of medical diagnosis and bioenvironmental monitoring. In mass production, these biochips could be relatively inexpensive (hence, disposable). These biochips would be integrated with computer-controlled microfluidic and microelectronic devices in automated hand-held and bench-top instruments that could be used to perform rapid in vitro genetic analyses with simplified preparation of samples. Carbon nanotubes are attractive for use as nanoelectrodes for detection of biomolecules because of their nanoscale dimensions and their chemical properties.

UVPROM dosimetry, microdosimetry and applications to SEU and extreme value theory

NASA Astrophysics Data System (ADS)

Scheick, Leif Zebediah

A new method is described for characterizing a device in terms of the statistical distribution of first failures. The method is based on the erasure of a commercial Ultra- Violet erasable Programmable Read Only Memory (UVPROM). The method of readout would be used on a spacecraft or in other restrictive radiation environments. The measurement of the charge remaining on the floating gate is used to determine absorbed dose. The method of determining dose does not require the detector to be destroyed or erased nor does it effect the ability for taking further measurements. This is compared to extreme value theory applied to the statistical distributions that apply to this device. This technique predicts the threshold of Single Event Effects (SEE), like anomalous changes in erasure time in programmable devices due to high microdose energy-deposition events. This technique also allows for advanced non-destructive, screening of a single microelectronic devices for predictable response in a stressful, i.e. radiation, environments.

Preface to the special issue of Solid State Electronics EUROSOI/ULIS 2017

NASA Astrophysics Data System (ADS)

Nassiopoulou, Androula G.

2018-05-01

This special issue is devoted to selected papers presented at the EuroSOI-ULIS2017 international conference, held in Athens on 3-5 April 2017. EuroSOI-ULIS2017 Conference was mainly devoted to Si devices, which constitute the basic building blocks of any microelectronic circuit. It included papers on advanced Si technologies, novel nanoscale devices, advanced electronic materials and device architectures, mechanisms involved, test structures, substrate materials and technologies, modeling/simulation and characterization. Both CMOS and beyond CMOS devices were presented, covering the More Moore domain, as well as new functionalities in silicon-compatible nanostructures and innovative devices, representing the More than Moore domain (on-chip sensors, biosensors, energy harvesting devices, RF passives, etc.).

Ultralow-k nanoporous organosilicate dielectric films imprinted with dendritic spheres.

PubMed

Lee, Byeongdu; Park, Young-Hee; Hwang, Yong-Taek; Oh, Weontae; Yoon, Jinhwan; Ree, Moonhor

2005-02-01

Integrated circuits that have improved functionality and speed in a smaller package and that consume less power are desired by the microelectronics industry as well as by end users, to increase device performance and reduce costs. The fabrication of high-performance integrated circuits requires the availability of materials with low or ultralow dielectric constant (low-k: k

Practical Applications of Cosmic Ray Science: Spacecraft, Aircraft, Ground-Based Computation and Control Systems, and Human Health and Safety

NASA Technical Reports Server (NTRS)

Atwell, William; Koontz, Steve; Normand, Eugene

2012-01-01

Three twentieth century technological developments, 1) high altitude commercial and military aircraft; 2) manned and unmanned spacecraft; and 3) increasingly complex and sensitive solid state micro-electronics systems, have driven an ongoing evolution of basic cosmic ray science into a set of practical engineering tools needed to design, test, and verify the safety and reliability of modern complex technological systems. The effects of primary cosmic ray particles and secondary particle showers produced by nuclear reactions with the atmosphere, can determine the design and verification processes (as well as the total dollar cost) for manned and unmanned spacecraft avionics systems. Similar considerations apply to commercial and military aircraft operating at high latitudes and altitudes near the atmospheric Pfotzer maximum. Even ground based computational and controls systems can be negatively affected by secondary particle showers at the Earth s surface, especially if the net target area of the sensitive electronic system components is large. Finally, accumulation of both primary cosmic ray and secondary cosmic ray induced particle shower radiation dose is an important health and safety consideration for commercial or military air crews operating at high altitude/latitude and is also one of the most important factors presently limiting manned space flight operations beyond low-Earth orbit (LEO). In this paper we review the discovery of cosmic ray effects on the performance and reliability of microelectronic systems as well as human health and the development of the engineering and health science tools used to evaluate and mitigate cosmic ray effects in ground-based atmospheric flight, and space flight environments. Ground test methods applied to microelectronic components and systems are used in combinations with radiation transport and reaction codes to predict the performance of microelectronic systems in their operating environments. Similar radiation transport codes are used to evaluate possible human health effects of cosmic ray exposure, however, the health effects are based on worst-case analysis and extrapolation of a very limited human exposure data base combined with some limited experimental animal data. Finally, the limitations on human space operations beyond low-Earth orbit imposed by long term exposure to galactic cosmic rays are discussed.

NASA Electronic Parts and Packaging (NEPP) Program - Update

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Sampson, Michael J.

2010-01-01

This slide presentation reviews the goals and mission of the NASA Electronic Parts and Packaging (NEPP) Program. The NEPP mission is to provide guidance to NASA for the selection and application of microelectronics technologies, to improve understanding of the risks related to the use of these technologies in the space environment and to ensure that appropriate research is performed to meet NASA mission assurance needs. The program has been supporting NASA for over 20 years. The focus is on the reliability aspects of electronic devices. In this work the program also supports the electronics industry. There are several areas that the program is involved in: Memories, systems on a chip (SOCs), data conversion devices, power MOSFETS, power converters, scaled CMOS, capacitors, linear devices, fiber optics, and other electronics such as sensors, cryogenic and SiGe that are used in space systems. Each of these area are reviewed with the work that is being done in reliability and effects of radiation on these technologies.

Fabrication of fillable microparticles and other complex 3D microstructures

NASA Astrophysics Data System (ADS)

McHugh, Kevin J.; Nguyen, Thanh D.; Linehan, Allison R.; Yang, David; Behrens, Adam M.; Rose, Sviatlana; Tochka, Zachary L.; Tzeng, Stephany Y.; Norman, James J.; Anselmo, Aaron C.; Xu, Xian; Tomasic, Stephanie; Taylor, Matthew A.; Lu, Jennifer; Guarecuco, Rohiverth; Langer, Robert; Jaklenec, Ana

2017-09-01

Three-dimensional (3D) microstructures created by microfabrication and additive manufacturing have demonstrated value across a number of fields, ranging from biomedicine to microelectronics. However, the techniques used to create these devices each have their own characteristic set of advantages and limitations with regards to resolution, material compatibility, and geometrical constraints that determine the types of microstructures that can be formed. We describe a microfabrication method, termed StampEd Assembly of polymer Layers (SEAL), and create injectable pulsatile drug-delivery microparticles, pH sensors, and 3D microfluidic devices that we could not produce using traditional 3D printing. SEAL allows us to generate microstructures with complex geometry at high resolution, produce fully enclosed internal cavities containing a solid or liquid, and use potentially any thermoplastic material without processing additives.

Direct view at colossal permittivity in donor-acceptor (Nb, In) co-doped rutile TiO2

NASA Astrophysics Data System (ADS)

Mandal, Suman; Pal, Somnath; Kundu, Asish K.; Menon, Krishnakumar S. R.; Hazarika, Abhijit; Rioult, Maxime; Belkhou, Rachid

2016-08-01

Topical observations of colossal permittivity (CP) with low dielectric loss in donor-acceptor cations co-doped rutile TiO2 have opened up several possibilities in microelectronics and energy-storage devices. Yet, the precise origin of the CP behavior, knowledge of which is essential to empower the device integration suitably, is highly disputed in the literature. From spectromicroscopic approach besides dielectric measurements, we explore that microscopic electronic inhomogeneities along with the nano-scale phase boundaries and the low temperature polaronic relaxation are mostly responsible for such a dielectric behavior, rather than electron-pinned defect-dipoles/grain-boundary effects as usually proposed. Donor-acceptor co-doping results in a controlled carrier-hopping inevitably influencing the dielectric loss while invariably upholding the CP value.

MEMS Device Being Developed for Active Cooling and Temperature Control

NASA Technical Reports Server (NTRS)

Moran, Matthew E.

2001-01-01

High-capacity cooling options remain limited for many small-scale applications such as microelectronic components, miniature sensors, and microsystems. A microelectromechanical system (MEMS) is currently under development at the NASA Glenn Research Center to meet this need. It uses a thermodynamic cycle to provide cooling or heating directly to a thermally loaded surface. The device can be used strictly in the cooling mode, or it can be switched between cooling and heating modes in milliseconds for precise temperature control. Fabrication and assembly are accomplished by wet etching and wafer bonding techniques routinely used in the semiconductor processing industry. Benefits of the MEMS cooler include scalability to fractions of a millimeter, modularity for increased capacity and staging to low temperatures, simple interfaces and limited failure modes, and minimal induced vibration.

Tunable dielectric properties of TiO2 thin film based MOS systems for application in microelectronics

NASA Astrophysics Data System (ADS)

Gyanan; Mondal, Sandip; Kumar, Arvind

2016-12-01

Post-deposition annealing (PDA) is an inherent part of a sol-gel fabrication process to achieve the optimum device performance, especially in CMOS applications. Annealing removes the oxygen vacancies and improves the structural order of the dielectric films. The process also reduces the interface related defects and improves the interfacial properties. Here, we applied a sol-gel spin-coating technique to prepare high-k TiO2 films on the p-Si substrate. These films were fired at 400 °C for the duration of 20, 40, 60 and 80 min to know the effects of annealing time on the device characteristics. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of annealed TiO2 films were examined in Al/TiO2/p-Si device configuration at room temperature. The 60 min annealed film gives the optimum performance and contained 69.5% anatase and 39.5% rutile phase with refractive index 2.40 at 550 nm. The C-V and I-V characteristic showed a significant dependence on annealing time such as variation in dielectric constant and leakage current. This allows us to tune the various electrical properties of MOS systems. The accumulation capacitance (Cox), dielectric constant (κ) and the equivalent oxide thickness (EOT) of the film fired for 60 min were found to be 458 pF, 33, and 4.25 nm, respectively with a low leakage current density (3.13 × 10-7 A/cm2) fired for 80 min at -1 V. The current conduction mechanisms at high bias voltage were dominated by trap-charge limited current (TCLC), while at small voltages, space charge limited current (SCLC) was more prominent.

Secondary School Projects and the Microchip.

ERIC Educational Resources Information Center

Irvine, A. F.

This study of the applications of microelectronic devices in industry, together with an assessment of their value for use in schools, emphasizes the basic principles underlying the new technology and the practical ways in which these can contribute to associated work in computing and other disciplines in the school curriculum. Following a…

Flow Visualization Study of Natural Convection from a Heated Protrusion in a Liquid Filled Rectangular Enclosure.

DTIC Science & Technology

1983-12-01

PROPOSED SOLUTIONS Many papers have been published outlining alternative methods of thermally controlling microelectronic devices. Hannemann [3] describes...Workshop, NSF Grant ENG-7701297, Directions of Heat Transfer in Electronic Equipment, Fy R. C. Chu, 1977. 3. Hannemann , R., "Electronic System Thermal

On the nature of biomaterials.

PubMed

Williams, David F

2009-10-01

The situations in which biomaterials are currently used are vastly different to those of just a decade ago. Although implantable medical devices are still immensely important, medical technologies now encompass a range of drug and gene delivery systems, tissue engineering and cell therapies, organ printing and cell patterning, nanotechnology based imaging and diagnostic systems and microelectronic devices. These technologies still encompass metals, ceramics and synthetic polymers, but also biopolymers, self assembled systems, nanoparticles, carbon nanotubes and quantum dots. These changes imply that our original concepts of biomaterials and our expectations of their performance also have to change. This Leading Opinion Paper addresses these issues. It concludes that many substances which hitherto we may not have thought of as biomaterials should now be considered as such so that, alongside the traditional structural biomaterials, we have substances that have been engineered to perform functions within health care where their performance is directly controlled by interactions with tissues and tissue components. These include engineered tissues, cells, organs and even viruses. This essay develops the arguments for a radically different definition of a biomaterial.

Micro-Scale Thermoacoustics

NASA Astrophysics Data System (ADS)

Offner, Avshalom; Ramon, Guy Z.

2016-11-01

Thermoacoustic phenomena - conversion of heat to acoustic oscillations - may be harnessed for construction of reliable, practically maintenance-free engines and heat pumps. Specifically, miniaturization of thermoacoustic devices holds great promise for cooling of micro-electronic components. However, as devices size is pushed down to micro-meter scale it is expected that non-negligible slip effects will exist at the solid-fluid interface. Accordingly, new theoretical models for thermoacoustic engines and heat pumps were derived, accounting for a slip boundary condition. These models are essential for the design process of micro-scale thermoacoustic devices that will operate under ultrasonic frequencies. Stability curves for engines - representing the onset of self-sustained oscillations - were calculated with both no-slip and slip boundary conditions, revealing improvement in the performance of engines with slip at the resonance frequency range applicable for micro-scale devices. Maximum achievable temperature differences curves for thermoacoustic heat pumps were calculated, revealing the negative effect of slip on the ability to pump heat up a temperature gradient. The authors acknowledge the support from the Nancy and Stephen Grand Technion Energy Program (GTEP).

Assessing Advanced High School and Undergraduate Students' Thinking Skills: The Chemistry--From the Nanoscale to Microelectronics Module

ERIC Educational Resources Information Center

Dori, Yehudit Judy; Dangur, Vered; Avargil, Shirly; Peskin, Uri

2014-01-01

Chemistry students in Israel have two options for studying chemistry: basic or honors (advanced placement). For instruction in high school honors chemistry courses, we developed a module focusing on abstract topics in quantum mechanics: Chemistry--From the Nanoscale to Microelectronics. The module adopts a visual-conceptual approach, which…

Solid state microelectronics tolerant to radiation and high temperature. [JFET thick film hybrids

NASA Technical Reports Server (NTRS)

Draper, B. L.; Palmer, D. W.

1981-01-01

The 300 C electronics technology based on JFET thick film hybrids was tested up to 10 to the 9th power rad gamma (Si) and 10 to the 15th power neutrons/sq cm. Circuits and individual components from this technology all survived this total dose although some devices required 1 hour of annealing at 200 or 300 C to regain functionality. This technology used with real time annealing should function to levels greater than 10 to the 10th power rad gamma and 10 to the 16th power n/sq cm.

Low-damage high-throughput grazing-angle sputter deposition on graphene

NASA Astrophysics Data System (ADS)

Chen, C.-T.; Casu, E. A.; Gajek, M.; Raoux, S.

2013-07-01

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

Excimer-laser-induced surface treatments on metal and ceramic materials: applications to automotive, aerospace, and microelectronic industries

NASA Astrophysics Data System (ADS)

Autric, Michel L.

1999-09-01

Surface treatments by laser irradiation can improve materials properties in terms of mechanical and physico- chemical behaviors, these improvements being related to the topography, the hardness, the microstructure, the chemical composition. Up to now, the use of excimer lasers for industrial applications remained marginal in spite of the interest related to the short wavelength (high photon energy and better energetic coupling with materials and reduced thermal effects in the bulk material). Up to now, the main limitations concerned the beam quality, the beam delivery, the gas handling and the relatively high investment cost. At this time, the cost of laser devices is going down and the ultraviolet radiation can be conducted through optical fibers. These two elements give new interest in using excimer laser for industrial applications. The main objective of this research program which we are involved in, is to underline some materials processing applications for automotive, aerospace or microelectronic industries for which it could be more interesting to use excimer lasers (minimized thermal effects). This paper concerns the modifications of the roughness, porosity, hardness, structure, phase, residual stresses, chemical composition of the surface of materials such as metallic alloys (aluminum, steel, cast iron, titanium, and ceramics (oxide, nitride, carbide,...) irradiated by KrF and XeCl excimer lasers.

Fundamental understanding and rational design of high energy structural microbatteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yuxing; Li, Qiuyan; Cartmell, Samuel

Microbatteries play a critical role in determining the lifetime of downsized sensors, wearable devices and medical applications, etc. More often, structural batteries are required from the perspective of aesthetics and space utilization, which is however rarely explored. Herein, we discuss the fundamental issues associated with the rational design of practically usable high energy microbatteries. The tubular shape of the cell further allows the flexible integration of microelectronics. A functioning acoustic micro-transmitter continuously powered by this tubular battery has been successfully demonstrated. Multiple design features adopted to accommodate large mechanical stress during the rolling process are discussed providing new insights inmore » designing the structural microbatteries for emerging technologies.« less

Ultralow-threshold microcavity Raman laser on a microelectronic chip

NASA Astrophysics Data System (ADS)

Kippenberg, T. J.; Spillane, S. M.; Armani, D. K.; Vahala, K. J.

2004-06-01

Using ultrahigh-Q toroid microcavities on a chip, we demonstrate a monolithic microcavity Raman laser. Cavity photon lifetimes in excess of 100 ns combined with mode volumes typically of less than 1000 µm^3 significantly reduce the threshold for stimulated Raman scattering. In conjunction with the high ideality of a tapered optical fiber coupling junction, stimulated Raman lasing is observed at an ultralow threshold (as low as 74 µW of fiber-launched power at 1550 nm) with high efficiency (up to 45% at the critical coupling point) in good agreement with theoretical modeling. Equally important, the wafer-scale nature of these devices should permit integration with other photonic, mechanical, or electrical functionality on a chip.

Impact of Device Scaling on Deep Sub-micron Transistor Reliability: A Study of Reliability Trends using SRAM

NASA Technical Reports Server (NTRS)

White, Mark; Huang, Bing; Qin, Jin; Gur, Zvi; Talmor, Michael; Chen, Yuan; Heidecker, Jason; Nguyen, Duc; Bernstein, Joseph

2005-01-01

As microelectronics are scaled in to the deep sub-micron regime, users of advanced technology CMOS, particularly in high-reliability applications, should reassess how scaling effects impact long-term reliability. An experimental based reliability study of industrial grade SRAMs, consisting of three different technology nodes, is proposed to substantiate current acceleration models for temperature and voltage life-stress relationships. This reliability study utilizes step-stress techniques to evaluate memory technologies (0.25mum, 0.15mum, and 0.13mum) embedded in many of today's high-reliability space/aerospace applications. Two acceleration modeling approaches are presented to relate experimental FIT calculations to Mfr's qualification data.

Ultralow-threshold microcavity Raman laser on a microelectronic chip.

PubMed

Kippenberg, T J; Spillane, S M; Armani, D K; Vahala, K J

2004-06-01

Using ultrahigh-Q toroid microcavities on a chip, we demonstrate a monolithic microcavity Raman laser. Cavity photon lifetimes in excess of 100 ns combined with mode volumes typically of less than 1000 (microm)3 significantly reduce the threshold for stimulated Raman scattering. In conjunction with the high ideality of a tapered optical fiber coupling junction, stimulated Raman lasing is observed at an ultralow threshold (as low as 74 microW of fiber-launched power at 1550 nm) with high efficiency (up to 45% at the critical coupling point) in good agreement with theoretical modeling. Equally important, the wafer-scale nature of these devices should permit integration with other photonic, mechanical, or electrical functionality on a chip.

Silicon Heat Pipe Array

NASA Technical Reports Server (NTRS)

Yee, Karl Y.; Ganapathi, Gani B.; Sunada, Eric T.; Bae, Youngsam; Miller, Jennifer R.; Beinsford, Daniel F.

2013-01-01

Improved methods of heat dissipation are required for modern, high-power density electronic systems. As increased functionality is progressively compacted into decreasing volumes, this need will be exacerbated. High-performance chip power is predicted to increase monotonically and rapidly with time. Systems utilizing these chips are currently reliant upon decades of old cooling technology. Heat pipes offer a solution to this problem. Heat pipes are passive, self-contained, two-phase heat dissipation devices. Heat conducted into the device through a wick structure converts the working fluid into a vapor, which then releases the heat via condensation after being transported away from the heat source. Heat pipes have high thermal conductivities, are inexpensive, and have been utilized in previous space missions. However, the cylindrical geometry of commercial heat pipes is a poor fit to the planar geometries of microelectronic assemblies, the copper that commercial heat pipes are typically constructed of is a poor CTE (coefficient of thermal expansion) match to the semiconductor die utilized in these assemblies, and the functionality and reliability of heat pipes in general is strongly dependent on the orientation of the assembly with respect to the gravity vector. What is needed is a planar, semiconductor-based heat pipe array that can be used for cooling of generic MCM (multichip module) assemblies that can also function in all orientations. Such a structure would not only have applications in the cooling of space electronics, but would have commercial applications as well (e.g. cooling of microprocessors and high-power laser diodes). This technology is an improvement over existing heat pipe designs due to the finer porosity of the wick, which enhances capillary pumping pressure, resulting in greater effective thermal conductivity and performance in any orientation with respect to the gravity vector. In addition, it is constructed of silicon, and thus is better suited for the cooling of semiconductor devices.

Vertically Aligned and Interconnected SiC Nanowire Networks Leading to Significantly Enhanced Thermal Conductivity of Polymer Composites.

PubMed

Yao, Yimin; Zhu, Xiaodong; Zeng, Xiaoliang; Sun, Rong; Xu, Jian-Bin; Wong, Ching-Ping

2018-03-21

Efficient heat removal via thermal management materials has become one of the most critical challenges in the development of modern microelectronic devices. However, previously reported polymer composites exhibit limited enhancement of thermal conductivity, even when highly loaded with thermally conductive fillers, because of the lack of efficient heat transfer pathways. Herein, we report vertically aligned and interconnected SiC nanowire (SiCNW) networks as efficient fillers for polymer composites, achieving significantly enhanced thermal conductivity. The SiCNW networks are produced by freeze-casting nanowire aqueous suspensions followed by thermal sintering to consolidate the nanowire junctions, exhibiting a hierarchical architecture in which honeycomb-like SiCNW layers are aligned. The composite obtained by infiltrating SiCNW networks with epoxy resin, at a relatively low SiCNW loading of 2.17 vol %, represents a high through-plane thermal conductivity (1.67 W m -1 K -1 ) compared to the pure matrix, which is equivalent to a significant enhancement of 406.6% per 1 vol % loading. The orderly SiCNW network which can act as a macroscopic expressway for phonon transport is believed to be the main contributor for the excellent thermal performance. This strategy provides insights for the design of high-performance composites with potential to be used in advanced thermal management materials.

Listening to Brain Microcircuits for Interfacing With External World—Progress in Wireless Implantable Microelectronic Neuroengineering Devices

PubMed Central

Nurmikko, Arto V.; Donoghue, John P.; Hochberg, Leigh R.; Patterson, William R.; Song, Yoon-Kyu; Bull, Christopher W.; Borton, David A.; Laiwalla, Farah; Park, Sunmee; Ming, Yin; Aceros, Juan

2011-01-01

Acquiring neural signals at high spatial and temporal resolution directly from brain microcircuits and decoding their activity to interpret commands and/or prior planning activity, such as motion of an arm or a leg, is a prime goal of modern neurotechnology. Its practical aims include assistive devices for subjects whose normal neural information pathways are not functioning due to physical damage or disease. On the fundamental side, researchers are striving to decipher the code of multiple neural microcircuits which collectively make up nature’s amazing computing machine, the brain. By implanting biocompatible neural sensor probes directly into the brain, in the form of microelectrode arrays, it is now possible to extract information from interacting populations of neural cells with spatial and temporal resolution at the single cell level. With parallel advances in application of statistical and mathematical techniques tools for deciphering the neural code, extracted populations or correlated neurons, significant understanding has been achieved of those brain commands that control, e.g., the motion of an arm in a primate (monkey or a human subject). These developments are accelerating the work on neural prosthetics where brain derived signals may be employed to bypass, e.g., an injured spinal cord. One key element in achieving the goals for practical and versatile neural prostheses is the development of fully implantable wireless microelectronic “brain-interfaces” within the body, a point of special emphasis of this paper. PMID:21654935

Investigation of Jet Impingement Cooling Using High Prandtl Number Fluids and Ammonia for Military Applications

DTIC Science & Technology

2004-03-01

interesting application of liquid jets impinging over a surface is for the cooling of microelectronics. Wadsworth and Mudawar [29] performed an...and I. Mudawar , Cooling of a Multiple Electronic Module by Means of Confined Two-Dimensional Jets of Dielectric Liquid, Journal of Heat Transfer, vol

Tera-Ops Processing for ATR

NASA Technical Reports Server (NTRS)

Udomkesmalee, Suraphol; Padgett, Curtis; Zhu, David; Lung, Gerald; Howard, Ayanna

2000-01-01

A three-dimensional microelectronic device (3DANN-R) capable of performing general image convolution at the speed of 1012 operations/second (ops) in a volume of less than 1.5 cubic centimeter has been successfully built under the BMDO/JPL VIGILANTE program. 3DANN-R was developed in partnership with Irvine Sensors Corp., Costa Mesa, California. 3DANN-R is a sugar-cube-sized, low power image convolution engine that in its core computation circuitry is capable of performing 64 image convolutions with large (64x64) windows at video frame rates. This paper explores potential applications of 3DANN-R such as target recognition, SAR and hyperspectral data processing, and general machine vision using real data and discuss technical challenges for providing deployable systems for BMDO surveillance and interceptor programs.

Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip.

PubMed

Atabaki, Amir H; Moazeni, Sajjad; Pavanello, Fabio; Gevorgyan, Hayk; Notaros, Jelena; Alloatti, Luca; Wade, Mark T; Sun, Chen; Kruger, Seth A; Meng, Huaiyu; Al Qubaisi, Kenaish; Wang, Imbert; Zhang, Bohan; Khilo, Anatol; Baiocco, Christopher V; Popović, Miloš A; Stojanović, Vladimir M; Ram, Rajeev J

2018-04-01

Electronic and photonic technologies have transformed our lives-from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions 1,2 . This goal is hindered by the fact that most silicon nanotechnologies-which enable our processors, computer memory, communications chips and image sensors-rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal-oxide-semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing 3,4 . By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions 5 , but with the performance, complexity and scalability of 'systems on a chip' 1,6-8 . As transistors smaller than ten nanometres across become commercially available 9 , and as new nanotechnologies emerge 10,11 , this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics.

Large-area low-temperature ultrananocrystaline diamond (UNCD) films and integration with CMOS devices for monolithically integrated diamond MEMD/NEMS-CMOS systems.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sumant, A.V.; Auciello, O.; Yuan, H.-C

2009-05-01

Because of exceptional mechanical, chemical, and tribological properties, diamond has a great potential to be used as a material for the development of high-performance MEMS and NEMS such as resonators and switches compatible with harsh environments, which involve mechanical motion and intermittent contact. Integration of such MEMS/NEMS devices with complementary metal oxide semiconductor (CMOS) microelectronics will provide a unique platform for CMOS-driven commercial MEMS/NEMS. The main hurdle to achieve diamond-CMOS integration is the relatively high substrate temperatures (600-800 C) required for depositing conventional diamond thin films, which are well above the CMOS operating thermal budget (400 C). Additionally, a materialsmore » integration strategy has to be developed to enable diamond-CMOS integration. Ultrananocrystalline diamond (UNCD), a novel material developed in thin film form at Argonne, is currently the only microwave plasma chemical vapor deposition (MPCVD) grown diamond film that can be grown at 400 C, and still retain exceptional mechanical, chemical, and tribological properties comparable to that of single crystal diamond. We have developed a process based on MPCVD to synthesize UNCD films on up to 200 mm in diameter CMOS wafers, which will open new avenues for the fabrication of monolithically integrated CMOS-driven MEMS/NEMS based on UNCD. UNCD films were grown successfully on individual Si-based CMOS chips and on 200 mm CMOS wafers at 400 C in a MPCVD system, using Ar-rich/CH4 gas mixture. The CMOS devices on the wafers were characterized before and after UNCD deposition. All devices were performing to specifications with very small degradation after UNCD deposition and processing. A threshold voltage degradation in the range of 0.08-0.44V and transconductance degradation in the range of 1.5-9% were observed.« less

Heat detection and compositions and devices therefor

NASA Technical Reports Server (NTRS)

Rembaum, A. (Inventor)

1975-01-01

Temperature change of a substrate such as a microelectronic component is sensed and detected by means of a mixture of a weak molecular complex of an electron donor compound such as an organic amine and an electron acceptor compound such as nitroaromatic compound. The mixture is encapsulated in a clear binder such as a vinyl resin.

Microelectronics (Electronic Devices) Research, Development, Test, and Evaluation Laboratories with DoD

DTIC Science & Technology

1994-04-08

Range, New Mexico , the National Aeronautics and Space Administration Langley Research Center in Hampton, Virginia, and the Lewis Research Center in...SUBMITTED TO CONGRESS MARCH 1993 40 Appendix £. Excerpt from the Army’s Justification for DoD Base Realignment and Closure SEXt BYSASD iNLi i/Ba

A Methodology to Teach Advanced A/D Converters, Combining Digital Signal Processing and Microelectronics Perspectives

ERIC Educational Resources Information Center

Quintans, C.; Colmenar, A.; Castro, M.; Moure, M. J.; Mandado, E.

2010-01-01

ADCs (analog-to-digital converters), especially Pipeline and Sigma-Delta converters, are designed using complex architectures in order to increase their sampling rate and/or resolution. Consequently, the learning of ADC devices also encompasses complex concepts such as multistage synchronization, latency, oversampling, modulation, noise shaping,…

Microelectronic Precision Optical Element Fabrication

DTIC Science & Technology

2009-01-01

spectra for a 0-25V reverse bias and the device tilted at -35° to the optical axis. Also shown is the diode reverse bias I-V curve . 1530 1540...optical modulator using an MEMS deformable micromirror array," Journal of Lightwave Technology, vol. 24(1), pp. 516-525, January 2006. [4] D. H. Parker, M

Self-transducing silicon nanowire electromechanical systems at room temperature.

PubMed

He, Rongrui; Feng, X L; Roukes, M L; Yang, Peidong

2008-06-01

Electronic readout of the motions of genuinely nanoscale mechanical devices at room temperature imposes an important challenge for the integration and application of nanoelectromechanical systems (NEMS). Here, we report the first experiments on piezoresistively transduced very high frequency Si nanowire (SiNW) resonators with on-chip electronic actuation at room temperature. We have demonstrated that, for very thin (~90 nm down to ~30 nm) SiNWs, their time-varying strain can be exploited for self-transducing the devices' resonant motions at frequencies as high as approximately 100 MHz. The strain of wire elongation, which is only second-order in doubly clamped structures, enables efficient displacement transducer because of the enhanced piezoresistance effect in these SiNWs. This intrinsically integrated transducer is uniquely suited for a class of very thin wires and beams where metallization and multilayer complex patterning on devices become impractical. The 30 nm thin SiNW NEMS offer exceptional mass sensitivities in the subzeptogram range. This demonstration makes it promising to advance toward NEMS sensors based on ultrathin and even molecular-scale SiNWs, and their monolithic integration with microelectronics on the same chip.

All-inkjet-printed thin-film transistors: manufacturing process reliability by root cause analysis

PubMed Central

Sowade, Enrico; Ramon, Eloi; Mitra, Kalyan Yoti; Martínez-Domingo, Carme; Pedró, Marta; Pallarès, Jofre; Loffredo, Fausta; Villani, Fulvia; Gomes, Henrique L.; Terés, Lluís; Baumann, Reinhard R.

2016-01-01

We report on the detailed electrical investigation of all-inkjet-printed thin-film transistor (TFT) arrays focusing on TFT failures and their origins. The TFT arrays were manufactured on flexible polymer substrates in ambient condition without the need for cleanroom environment or inert atmosphere and at a maximum temperature of 150 °C. Alternative manufacturing processes for electronic devices such as inkjet printing suffer from lower accuracy compared to traditional microelectronic manufacturing methods. Furthermore, usually printing methods do not allow the manufacturing of electronic devices with high yield (high number of functional devices). In general, the manufacturing yield is much lower compared to the established conventional manufacturing methods based on lithography. Thus, the focus of this contribution is set on a comprehensive analysis of defective TFTs printed by inkjet technology. Based on root cause analysis, we present the defects by developing failure categories and discuss the reasons for the defects. This procedure identifies failure origins and allows the optimization of the manufacturing resulting finally to a yield improvement. PMID:27649784

Nano-Satellite Avionics

NASA Technical Reports Server (NTRS)

Culver, Harry

1999-01-01

Abstract NASA's Goddard Space Flight Center (GSFC) is currently developing a new class of satellites called the nano-satellite (nano-sat). A major objective of this development effort is to provide the technology required to enable a constellation of tens to hundreds of nano-satellites to make both remote and in-situ measurements from space. The Nano-sat will be a spacecraft weighing a maximum of 10 kg, including the propellant mass, and producing at least 5 Watts of power to operate the spacecraft. The electronics are required to survive a total radiation dose rate of 100 krads for a mission lifetime of two years. There are many unique challenges that must be met in order to develop the avionics for such a spacecraft. The first challenge is to develop an architecture that will operate on the allotted 5 Watts and meet the diverging requirements of multiple missions. This architecture will need to incorporate a multitude of new advanced microelectronic technologies. The microelectronics developed must be a modular and scalable packaging of technology to solve the problem of developing a solution to both reduce cost and meet the requirements of various missions. This development will utilize the most cost effective approach, whether infusing commercially driven semiconductor devices into spacecraft applications or partnering with industry to design and develop low cost, low power, low mass, and high capacity data processing devices. This paper will discuss the nano-sat architecture and the major technologies that will be developed. The major technologies that will be covered include: (1) Light weight Low Power Electronics Packaging, (2) Radiation Hard/Tolerant, Low Power Processing Platforms, (3) High capacity Low Power Memory Systems (4) Radiation Hard reconfiguragble field programmable gate array (rFPGA)

Macro management of microelectronics in India in 1990s

NASA Astrophysics Data System (ADS)

Gupta, Parmod K.

1992-08-01

Development of microelectronics is taking place at a very fast rate all over the globe, including India. New technologies are introduced at very short intervals in order to capture the consumer market. It is essential that these technologies are managed properly at the macro level in order to bring the desired results. Microelectronics plays a very vital role in office automation for achieving cost effective results in a highly competitive environment. Introduction of various facilities like laser printers, photo copiers, dictaphone-selectronic boards, electronic telexes, teleconference rooms, telephone answering machines, computer, word processors, sensors, etc. have all revolutionized the industry. Keeping the above in view, the present and future status of microelectronics, with special emphasis on its role in office automation in India, are discussed in detail in this paper.

Microfluidic redox battery.

PubMed

Lee, Jin Wook; Goulet, Marc-Antoni; Kjeang, Erik

2013-07-07

A miniaturized microfluidic battery is proposed, which is the first membraneless redox battery demonstrated to date. This unique concept capitalizes on dual-pass flow-through porous electrodes combined with stratified, co-laminar flow to generate electrical power on-chip. The fluidic design is symmetric to allow for both charging and discharging operations in forward, reverse, and recirculation modes. The proof-of-concept device fabricated using low-cost materials integrated in a microfluidic chip is shown to produce competitive power levels when operated on a vanadium redox electrolyte. A complete charge/discharge cycle is performed to demonstrate its operation as a rechargeable battery, which is an important step towards providing sustainable power to lab-on-a-chip and microelectronic applications.

Atomic layer deposition of (K,Na)(Nb,Ta)O{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sønsteby, Henrik Hovde, E-mail: henrik.sonsteby@kjemi.iuio.no; Nilsen, Ola; Fjellvåg, Helmer

2016-07-15

Thin films of complex alkali oxides are frequently investigated due to the large range of electric effects that are found in this class of materials. Their piezo- and ferroelectric properties also place them as sustainable lead free alternatives in optoelectronic devices. Fully gas-based routes for deposition of such compounds are required for integration into microelectronic devices that need conformal thin films with high control of thickness- and composition. The authors here present a route for deposition of materials in the (K,Na)(Nb,Ta)O{sub 3}-system, including the four end members NaNbO{sub 3}, KNbO{sub 3}, NaTaO{sub 3}, and KTaO{sub 3}, using atomic layer depositionmore » with emphasis on control of stoichiometry in such mixed quaternary and quinary compunds.« less

Thermal and Electrical Characterization of Alumina Substrate for Microelectronic Applications

NASA Astrophysics Data System (ADS)

Ahmad, S.; Ibrahim, A.; Alias, R.; Shapee, S. M.; Ambak, Z.; Zakaria, S. Z.; Yahya, M. R.; Mat, A. F. A.

2010-03-01

This paper reports the effect of sintering temperature on thermal and electrical properties of alumina material as substrate for microelectronic devices. Alumina materials in the form of green sheet with 1 mm thickness were sintered at 1100° C, 1300° C and 1500° C for about 20 hours using heating and cooling rates of 2° C/min. The densities were measured using densitometer and the microstructures of the samples were analyzed using SEM micrographs. Meanwhile thermal and electrical properties of the samples were measured using flash method and impedance analyzer respectively. It was found that thermal conductivity and thermal diffusivity of the substrate increases as sintering temperature increases. It was found also that the dielectric constant of alumina substrate increases as the sintering temperature increases.

Nanoscale Device Properties of Tellurium-based Chalcogenide Compounds

NASA Astrophysics Data System (ADS)

Dahal, Bishnu R.

The great progress achieved in miniaturization of microelectronic devices has now reached a distinct bottleneck, as devices are starting to approach the fundamental fabrication and performance limit. Even if a major breakthrough is made in the fabrication process, these scaled down electronic devices will not function properly since the quantum effects can no longer be neglected in the nanoscale regime. Advances in nanotechnology and new materials are driving novel technologies for future device applications. Current microelectronic devices have the smallest feature size, around 10 nm, and the industry is planning to switch away from silicon technology in the near future. The new technology will be fundamentally different. There are several leading technologies based on spintronics, tunneling transistors, and the newly discovered 2-dimensional material systems. All of these technologies are at the research level, and are far from ready for use in making devices in large volumes. This dissertation will focus on a very promising material system, Te-based chalcogenides, which have potential applications in spintronics, thermoelectricity and topological insulators that can lead to low-power-consumption electronics. Very recently it was predicted and experimentally observed that the spin-orbit interaction in certain materials can lead to a new electronic state called topological insulating phase. The topological insulator, like an ordinary insulator, has a bulk energy gap separating the highest occupied electronic band from the lowest empty band. However, the surface states in the case of a three-dimensional or edge states in a two-dimensional topological insulator allow electrons to conduct at the surface, due to the topological character of the bulk wavefunctions. These conducting states are protected by time-reversal symmetry, and cannot be eliminated by defects or chemical passivation. The edge/surface states satisfy Dirac dispersion relations, and hence the physics of relativistic Dirac fermions becomes relevant. This results in peculiar quantum oscillations in transport measurements which make it possible to unambiguously identify surface Dirac fermions. In order to lead us towards a better understanding of topological insulators and their applications, it is, however, necessary to develop techniques that will enable high quality materials to be obtained in a routine and reliable way. However, this has been an enormous challenge so far. Since highly volatile components are involved in most topological insulators, whether in bulk single crystal or epitaxial thin films or chemical vapor deposition grown nanoribbons, maintaining near stoichiometry has proven to be very difficult. Observing the predicted transport properties of these systems, particularly surface carriers of high mobility whilst maintaining bulk insulating states, is seriously impeded by the unintentional doping of bulk carriers. Moreover, in thin films and hetrostructures, at the all-important thickness range of a few nanometers, the additional limitation of the film-substrate lattice mismatch and the resulting strain in films is a major concern. In this thesis, we have developed a synthesis technique to obtain high quality SnTe nanoribbons, which is a topological crystalline insulator and its surface states are topologically protected by mirror symmetry of the lattice. The obtained ribbons are nearly stoichiometric and show strong semiconducting behavior with a bandgap of 240 meV. This is the first time high quality SnTe nanoribbons have been synthesized. High quality SnTe nanoribbons form a potential platform to understand the magnetic topological insulating behavior. In this thesis, it is also shown that magnetic behavior can be introduced in SnTe nanoribbons by means of chromium doping. Magnetically doped topological insulators, possessing an energy gap created at the Dirac point are predicted to exhibit exotic phenomena including the quantized anomalous Hall Effect and a dissipationless transport, which facilitate the development of low-power-consumption devices using electron spins. In addition, this thesis also discusses the growth and transport properties of another Te-based chalcogenide system, CoTe with ferrimagnetic and semiconducting behavior. We have shown that the structural, electrical and magnetic properties can be tuned by controlling the amount of cobalt in the system.

Reparable, high-density microelectronic module provides effective heat sink

NASA Technical Reports Server (NTRS)

Carlson, K. J.; Maytone, F. F.

1967-01-01

Reparable modular system is used for packaging microelectronic flat packs and miniature discrete components. This three-dimensional compartmented structure incorporates etched phosphor bronze sheets and frames with etched wire conductors. It provides an effective heat sink for electric power dissipation in the absence of convective cooling means.

Thick layered semiconductor devices with water top-gates: High on-off ratio field-effect transistors and aqueous sensors.

PubMed

Huang, Yuan; Sutter, Eli; Wu, Liangmei; Xu, Hong; Bao, Lihong; Gao, Hong-Jun; Zhou, Xingjiang; Sutter, Peter

2018-06-21

Layered semiconductors show promise as channel materials for field-effect transistors (FETs). Usually, such devices incorporate solid back or top gate dielectrics. Here, we explore de-ionized (DI) water as a solution top gate for field-effect switching of layered semiconductors including SnS2, MoS2, and black phosphorus. The DI water gate is easily fabricated, can sustain rapid bias changes, and its efficient coupling to layered materials provides high on-off current ratios, near-ideal sub-threshold swing, and enhanced short-channel behavior even for FETs with thick, bulk-like channels where such control is difficult to realize with conventional back-gating. Screening by the high-k solution gate eliminates hysteresis due to surface and interface trap states and substantially enhances the field-effect mobility. The onset of water electrolysis sets the ultimate limit to DI water gating at large negative gate bias. Measurements in this regime show promise for aqueous sensing, demonstrated here by the amperometric detection of glucose in aqueous solution. DI water gating of layered semiconductors can be harnessed in research on novel materials and devices, and it may with further development find broad applications in microelectronics and sensing.

Contributions to the initial development of a microelectromechanical loop heat pipe, which is based on coherent porous silicon

NASA Astrophysics Data System (ADS)

Cytrynowicz, Debra G.

The research project itself was the initiation of the development of a planar miniature loop heat pipe based on a capillary wick structure made of coherent porous silicon. Work on this project fell into four main categories, which were component fabrication, test system construction, characterization testing and test data collection, performance analysis and thermal modeling. Component fabrication involved the production of various components for the evaporator. When applicable, these components were to be produced by microelectronic and MEMS or microelectromechanical fabrication techniques. Required work involved analyses and, where necessary, modifications to the wafer processing sequence, the photo-electrochemical etching process, system and controlling computer program to make it more reliable, flexible and efficient. The development of more than one wick production process was also extremely necessary in the event of equipment failure. Work on developing this alternative also involved investigations into various details of the photo-electrochemical etching process itself. Test system construction involved the actual assembly of open and closed loop test systems. Characterization involved developing and administering a series of tests to evaluate the performance of the wicks and test systems. Although there were some indications that the devices were operating according to loop heat pipe theory, they were transient and unstable. Performance analysis involved the construction of a transparent evaporator, which enabled the visual observation of the phenomena, which occurred in the evaporator during operation. It also involved investigating the effect of the quartz wool secondary wick on the operation of the device. Observations made during the visualization study indicated that the capillary and boiling limits were being reached at extremely low values of input power. The work was performed in a collaborative effort between the Biomedical Nanotechnology Research Laboratory at the University of Toledo, the Center for Microelectronics and Sensors and MEMS at the University of Cincinnati and the Thermo-Mechanical Systems Branch of the Power and On-Board Propulsion Division at the John H. Glenn Research Center of the National Aeronautics and Space Administration in Cleveland, Ohio. Work on the project produced six publications, which presented various details on component fabrication, tests system construction and characterization and thermal modeling.

Tutorial: Determination of thermal boundary resistance by molecular dynamics simulations

NASA Astrophysics Data System (ADS)

Liang, Zhi; Hu, Ming

2018-05-01

Due to the high surface-to-volume ratio of nanostructured components in microelectronics and other advanced devices, the thermal resistance at material interfaces can strongly affect the overall thermal behavior in these devices. Therefore, the thermal boundary resistance, R, must be taken into account in the thermal analysis of nanoscale structures and devices. This article is a tutorial on the determination of R and the analysis of interfacial thermal transport via molecular dynamics (MD) simulations. In addition to reviewing the commonly used equilibrium and non-equilibrium MD models for the determination of R, we also discuss several MD simulation methods which can be used to understand interfacial thermal transport behavior. To illustrate how these MD models work for various interfaces, we will show several examples of MD simulation results on thermal transport across solid-solid, solid-liquid, and solid-gas interfaces. The advantages and drawbacks of a few other MD models such as approach-to-equilibrium MD and first-principles MD are also discussed.

Radiation effects in advanced microelectronics technologies

NASA Astrophysics Data System (ADS)

Johnston, A. H.

1998-06-01

The pace of device scaling has increased rapidly in recent years. Experimental CMOS devices have been produced with feature sizes below 0.1 /spl mu/m, demonstrating that devices with feature sizes between 0.1 and 0.25 /spl mu/m will likely be available in mainstream technologies after the year 2000. This paper discusses how the anticipated changes in device dimensions and design are likely to affect their radiation response in space environments. Traditional problems, such as total dose effects, SEU and latchup are discussed, along with new phenomena. The latter include hard errors from heavy ions (microdose and gate-rupture errors), and complex failure modes related to advanced circuit architecture. The main focus of the paper is on commercial devices, which are displacing hardened device technologies in many space applications. However, the impact of device scaling on hardened devices is also discussed.

Microfluidic Automation using elastomeric valves and droplets: reducing reliance on external controllers

PubMed Central

Kim, Sung-Jin; Lai, David; Park, Joong Yull; Yokokawa, Ryuji

2012-01-01

This paper gives an overview of elastomeric valve- and droplet-based microfluidic systems designed to minimize the need of external pressure to control fluid flow. This concept article introduces the working principle of representative components in these devices along with relevant biochemical applications. This is followed by providing a perspective on the roles of different microfluidic valves and systems through comparison of their similarities and differences with transistors (valves) and systems in microelectronics. Despite some physical limitation of drawing analogies from electronic circuits, automated microfluidic circuit design can gain insights from electronic circuits to minimize external control units, while implementing high complexity and throughput analysis. PMID:22761019

Application of He ion microscopy for material analysis

NASA Astrophysics Data System (ADS)

Altmann, F.; Simon, M.; Klengel, R.

2009-05-01

Helium ion beam microscopy (HIM) is a new high resolution imaging technique. The use of Helium ions instead of electrons enables none destructive imaging combined with contrasts quite similar to that from Gallium ion beam imaging. The use of very low probe currents and the comfortable charge compensation using low energy electrons offer imaging of none conductive samples without conductive coating. An ongoing microelectronic sample with Gold/Aluminum interconnects and polymer electronic devices were chosen to evaluate HIM in comparison to scanning electron microscopy (SEM). The aim was to look for key applications of HIM in material analysis. Main focus was on complementary contrast mechanisms and imaging of none conductive samples.

The role of nanotechnology and nano and micro-electronics in monitoring and control of cardiovascular diseases and neurological disorders

NASA Astrophysics Data System (ADS)

Varadan, Vijay K.

2007-04-01

Nanotechnology has been broadly defined as the one for not only the creation of functional materials and devices as well as systems through control of matter at the scale of 1-100 nm, but also the exploitation of novel properties and phenomena at the same scale. Growing needs in the point-of-care (POC) that is an increasing market for improving patient's quality of life, are driving the development of nanotechnologies for diagnosis and treatment of various life threatening diseases. This paper addresses the recent development of nanodiagnostic sensors and nanotherapeutic devices with functionalized carbon nanotube and/or nanowire on a flexible organic thin film electronics to monitor and control of the three leading diseases namely 1) neurodegenerative diseases, 2) cardiovascular diseases, and 3) diabetes and metabolic diseases. The sensors developed include implantable and biocompatible devices, light weight wearable devices in wrist-watches, hats, shoes and clothes. The nanotherapeutics devices include nanobased drug delivery system. Many of these sensors are integrated with the wireless systems for the remote physiological monitoring. The author's research team has also developed a wireless neural probe using nanowires and nanotubes for monitoring and control of Parkinson's disease. Light weight and compact EEG, EOG and EMG monitoring system in a hat developed is capable of monitoring real time epileptic patients and patients with neurological and movement disorders using the Internet and cellular network. Physicians could be able to monitor these signals in realtime using portable computers or cell phones and will give early warning signal if these signals cross a pre-determined threshold level. In addition the potential impact of nanotechnology for applications in medicine is that, the devices can be designed to interact with cells and tissues at the molecular level, which allows high degree of functionality. Devices engineered at nanometer scale imply a controlled manipulation of individual molecules and atoms that can interact with the human body at sub-cellular level. The recent progress in microelectronics and nanosensors crates very powerful tools for the early detection and diagnosis. The nanowire integrated potassium and dopamine sensors are ideal for the monitoring and control of many cardiovascular diseases and neurological disorders. Selected movies illustrating the applications of nanodevices to patients will be shown at the talk.

Automatic visual inspection system for microelectronics

NASA Technical Reports Server (NTRS)

Micka, E. Z. (Inventor)

1975-01-01

A system for automatically inspecting an integrated circuit was developed. A device for shining a scanning narrow light beam at an integrated circuit to be inspected and another light beam at an accepted integrated circuit was included. A pair of photodetectors that receive light reflected from these integrated circuits, and a comparing system compares the outputs of the photodetectors.

A Eu/Tb-mixed MOF for luminescent high-temperature sensing

NASA Astrophysics Data System (ADS)

Wang, Huizhen; Zhao, Dian; Cui, Yuangjing; Yang, Yu; Qian, Guodong

2017-02-01

Temperature measurements and thermal mapping using luminescent MOF operating in the high-temperature range are of great interest in the micro-electronic diagnosis. In this paper, we report a thermostable Eu/Tb-mixed MOF Eu0.37Tb0.63-BTC-a exhibiting strong luminescence at elevated temperature, which can serve as a ratiometric luminescent thermometer for high-temperature range. The high-temperature operating range (313-473 K), high relative sensitivity and accurate temperature resolution, make such a Eu/Tb-mixed MOF useful for micro-electronic diagnosis.

InP on SOI devices for optical communication and optical network on chip

NASA Astrophysics Data System (ADS)

Fedeli, J.-M.; Ben Bakir, B.; Olivier, N.; Grosse, Ph.; Grenouillet, L.; Augendre, E.; Phillippe, P.; Gilbert, K.; Bordel, D.; Harduin, J.

2011-01-01

For about ten years, we have been developing InP on Si devices under different projects focusing first on μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO2 direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is {7mW. Direct modulation can be achieved with already 6G operation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Economou, Demetre J.

As microelectronic device features continue to shrink approaching atomic dimensions, control of the ion energy distribution on the substrate during plasma etching and deposition becomes increasingly critical. The ion energy should be high enough to drive ion-assisted etching, but not too high to cause substrate damage or loss of selectivity. In many cases, a nearly monoenergetic ion energy distribution (IED) is desired to achieve highly selective etching. In this work, the author briefly reviews: (1) the fundamentals of development of the ion energy distribution in the sheath and (2) methods to control the IED on plasma electrodes. Such methods includemore » the application of “tailored” voltage waveforms on an electrode in continuous wave plasmas, or the application of synchronous bias on a “boundary electrode” during a specified time window in the afterglow of pulsed plasmas.« less

Fundamental understanding and rational design of high energy structural microbatteries

DOE PAGES

Wang, Yuxing; Li, Qiuyan; Cartmell, Samuel; ...

2017-11-21

We present that microbatteries play a critical role in determining the lifetime of downsized sensors, wearable devices, medical applications, and animal acoustic telemetry transmitters among others. More often, structural batteries are required from the perspective of aesthetics and space utilization, which is however rarely explored. Herein, we discuss the fundamental issues associated with the rational design of practically usable high energy microbatteries. The tubular shape of the cell further allows the flexible integration of microelectronics. A functioning acoustic micro-transmitter continuously powered by this tubular battery has been successfully demonstrated. Finally, multiple design features adopted to accommodate large mechanical stress duringmore » the rolling process are discussed providing new insights in designing the structural microbatteries for emerging technologies.« less

Fundamental understanding and rational design of high energy structural microbatteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yuxing; Li, Qiuyan; Cartmell, Samuel

We present that microbatteries play a critical role in determining the lifetime of downsized sensors, wearable devices, medical applications, and animal acoustic telemetry transmitters among others. More often, structural batteries are required from the perspective of aesthetics and space utilization, which is however rarely explored. Herein, we discuss the fundamental issues associated with the rational design of practically usable high energy microbatteries. The tubular shape of the cell further allows the flexible integration of microelectronics. A functioning acoustic micro-transmitter continuously powered by this tubular battery has been successfully demonstrated. Finally, multiple design features adopted to accommodate large mechanical stress duringmore » the rolling process are discussed providing new insights in designing the structural microbatteries for emerging technologies.« less

Organo-metallic elements for associative information processing

NASA Astrophysics Data System (ADS)

Potember, Richard S.; Poehler, Theodore O.

1989-01-01

In the three years of the program we have: (1) built and tested a 4 bit element matrix device for possible use in high density content-addressable memories systems; (2) established a test and evaluation laboratory to examine optical materials for nonlinear effects, saturable absorption, harmonic generation and photochromism; (3) successfully designed, constructed and operated a codeposition processing system that enables organic materials to be deposited on a variety of substrates to produce optical grade coatings and films. This system is also compatible with other traditional microelectronic techniques; (4) used the sol-gel process with colloidal AgTCNQ to fabricate high speed photochromic switches; (5) develop and applied for patent coverage to make VO2 optical switching materials via the sol-gel processing using vanadium (IV) alkoxide compounds.

Microfluidic automation using elastomeric valves and droplets: reducing reliance on external controllers.

PubMed

Kim, Sung-Jin; Lai, David; Park, Joong Yull; Yokokawa, Ryuji; Takayama, Shuichi

2012-10-08

This paper gives an overview of elastomeric valve- and droplet-based microfluidic systems designed to minimize the need of external pressure to control fluid flow. This Concept article introduces the working principle of representative components in these devices along with relevant biochemical applications. This is followed by providing a perspective on the roles of different microfluidic valves and systems through comparison of their similarities and differences with transistors (valves) and systems in microelectronics. Despite some physical limitation of drawing analogies from electronic circuits, automated microfluidic circuit design can gain insights from electronic circuits to minimize external control units, while implementing high-complexity and high-throughput analysis. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pavlikov, A. V., E-mail: pavlikov@physics.msu.ru; Latukhina, N. V.; Chepurnov, V. I.

Silicon-carbide (SiC) nanowire structures 40–50 nm in diameter are produced by the high-temperature carbonization of porous silicon and silicon nanowires. The SiC nanowires are studied by scanning electron microscopy, X-ray diffraction analysis, Raman spectroscopy, and infrared reflectance spectroscopy. The X-ray structural and Raman data suggest that the cubic 3C-SiC polytype is dominant in the samples under study. The shape of the infrared reflectance spectrum in the region of the reststrahlen band 800–900 cm{sup –1} is indicative of the presence of free charge carriers. The possibility of using SiC nanowires in microelectronic, photonic, and gas-sensing devices is discussed.

Long working distance incoherent interference microscope

DOEpatents

Sinclair, Michael B [Albuquerque, NM; De Boer, Maarten P [Albuquerque, NM

2006-04-25

A full-field imaging, long working distance, incoherent interference microscope suitable for three-dimensional imaging and metrology of MEMS devices and test structures on a standard microelectronics probe station. A long working distance greater than 10 mm allows standard probes or probe cards to be used. This enables nanometer-scale 3-dimensional height profiles of MEMS test structures to be acquired across an entire wafer while being actively probed, and, optionally, through a transparent window. An optically identical pair of sample and reference arm objectives is not required, which reduces the overall system cost, and also the cost and time required to change sample magnifications. Using a LED source, high magnification (e.g., 50.times.) can be obtained having excellent image quality, straight fringes, and high fringe contrast.

Research Activities at Plasma Research Laboratory at NASA Ames Research Center

NASA Technical Reports Server (NTRS)

Sharma, S. P.; Rao, M. V. V. S.; Meyyappan, Meyya

2000-01-01

In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies are being developed at NASA-Ames Research Center using a multi-discipline approach. The first step is to understand the basic physics of the chemical reactions in the area of plasma reactors and processes. Low pressure glow discharges are indispensable in the fabrication of microelectronic circuits. These plasmas are used to deposit materials and also etch fine features in device fabrication. However, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Although a great deal of laboratory-scale research has been performed on many of these processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. Our present research involves the study of such plasmas. An inductively-coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics. This ICP source generates plasmas with higher electron densities and lower operating pressures than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The research goal is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas phase and surface reaction rates, species concentration, temperature, ion energy distribution, and electron number density.

Graphene nanocomposites as thermal interface materials for cooling energy devices

NASA Astrophysics Data System (ADS)

Dmitriev, A. S.; Valeev, A. R.

2017-11-01

The paper describes the technology of creating samples of graphene nanocomposites based on graphene flakes obtained by splitting graphite with ultrasound of high power. Graphene nanocomposites in the form of samples are made by the technology of weak sintering at high pressure (200-300 bar) and temperature up to 150 0 C, and also in the form of compositions with polymer matrices. The reflection spectra in the visible range and the near infrared range for the surface of nanocomposite samples are studied, the data of optical and electronic spectroscopy of such samples are givenIn addition, data on the electrophysical and thermal properties of the nanocomposites obtained are presented. Some analytical models of wetting and spreading over graphene nanocomposite surfaces have been constructed and calculated, and their effective thermal conductivity has been calculated and compared with the available experimental data. Possible applications of graphene nanocomposites for use as thermal interface materials for heat removal and cooling for power equipment, as well as microelectronics and optoelectronics devices are described.

Fabrication of highly sensitive and selective H₂ gas sensor based on SnO₂ thin film sensitized with microsized Pd islands.

PubMed

Nguyen, Van Toan; Nguyen, Viet Chien; Nguyen, Van Duy; Hoang, Si Hong; Hugo, Nguyen; Nguyen, Duc Hoa; Nguyen, Van Hieu

2016-01-15

Ultrasensitive and selective hydrogen gas sensor is vital component in safe use of hydrogen that requires a detection and alarm of leakage. Herein, we fabricated a H2 sensing devices by adopting a simple design of planar-type structure sensor in which the heater, electrode, and sensing layer were patterned on the front side of a silicon wafer. The SnO2 thin film-based sensors that were sensitized with microsized Pd islands were fabricated at a wafer-scale by using a sputtering system combined with micro-electronic techniques. The thicknesses of SnO2 thin film and microsized Pd islands were optimized to maximize the sensing performance of the devices. The optimized sensor could be used for monitoring hydrogen gas at low concentrations of 25-250 ppm, with a linear dependence to H2 concentration and a fast response and recovery time. The sensor also showed excellent selectivity for monitoring H2 among other gases, such as CO, NH3, and LPG, and satisfactory characteristics for ensuring safety in handling hydrogen. The hydrogen sensing characteristics of the sensors sensitized with Pt and Au islands were also studied to clarify the sensing mechanisms. Copyright © 2015 Elsevier B.V. All rights reserved.

Defects and oxidation of group-III monochalcogenide monolayers

NASA Astrophysics Data System (ADS)

Guo, Yu; Zhou, Si; Bai, Yizhen; Zhao, Jijun

2017-09-01

Among various two-dimensional (2D) materials, monolayer group-III monochalcogenides (GaS, GaSe, InS, and InSe) stand out owing to their potential applications in microelectronics and optoelectronics. Devices made of these novel 2D materials are sensitive to environmental gases, especially O2 molecules. To address this critical issue, here we systematically investigate the oxidization behaviors of perfect and defective group-III monochalcogenide monolayers by first-principles calculations. The perfect monolayers show superior oxidation resistance with large barriers of 3.02-3.20 eV for the dissociation and chemisorption of O2 molecules. In contrast, the defective monolayers with single chalcogen vacancy are vulnerable to O2, showing small barriers of only 0.26-0.36 eV for the chemisorption of an O2 molecule. Interestingly, filling an O2 molecule to the chalcogen vacancy of group-III monochalcogenide monolayers could preserve the electronic band structure of the perfect system—the bandgaps are almost intact and the carrier effective masses are only moderately disturbed. On the other hand, the defective monolayers with single vacancies of group-III atoms carry local magnetic moments of 1-2 μB. These results help experimental design and synthesis of group-III monochalcogenides based 2D devices with high performance and stability.

Sparsity-Based Super Resolution for SEM Images.

PubMed

Tsiper, Shahar; Dicker, Or; Kaizerman, Idan; Zohar, Zeev; Segev, Mordechai; Eldar, Yonina C

2017-09-13

The scanning electron microscope (SEM) is an electron microscope that produces an image of a sample by scanning it with a focused beam of electrons. The electrons interact with the atoms in the sample, which emit secondary electrons that contain information about the surface topography and composition. The sample is scanned by the electron beam point by point, until an image of the surface is formed. Since its invention in 1942, the capabilities of SEMs have become paramount in the discovery and understanding of the nanometer world, and today it is extensively used for both research and in industry. In principle, SEMs can achieve resolution better than one nanometer. However, for many applications, working at subnanometer resolution implies an exceedingly large number of scanning points. For exactly this reason, the SEM diagnostics of microelectronic chips is performed either at high resolution (HR) over a small area or at low resolution (LR) while capturing a larger portion of the chip. Here, we employ sparse coding and dictionary learning to algorithmically enhance low-resolution SEM images of microelectronic chips-up to the level of the HR images acquired by slow SEM scans, while considerably reducing the noise. Our methodology consists of two steps: an offline stage of learning a joint dictionary from a sequence of LR and HR images of the same region in the chip, followed by a fast-online super-resolution step where the resolution of a new LR image is enhanced. We provide several examples with typical chips used in the microelectronics industry, as well as a statistical study on arbitrary images with characteristic structural features. Conceptually, our method works well when the images have similar characteristics, as microelectronics chips do. This work demonstrates that employing sparsity concepts can greatly improve the performance of SEM, thereby considerably increasing the scanning throughput without compromising on analysis quality and resolution.

Unexpected surface implanted layer in static random access memory devices observed by microwave impedance microscope

NASA Astrophysics Data System (ADS)

Kundhikanjana, W.; Yang, Y.; Tanga, Q.; Zhang, K.; Lai, K.; Ma, Y.; Kelly, M. A.; Li, X. X.; Shen, Z.-X.

2013-02-01

Real-space mapping of doping concentration in semiconductor devices is of great importance for the microelectronics industry. In this work, a scanning microwave impedance microscope (MIM) is employed to resolve the local conductivity distribution of a static random access memory sample. The MIM electronics can also be adjusted to the scanning capacitance microscopy (SCM) mode, allowing both measurements on the same region. Interestingly, while the conventional SCM images match the nominal device structure, the MIM results display certain unexpected features, which originate from a thin layer of the dopant ions penetrating through the protective layers during the heavy implantation steps.

Analysis of space radiation data of semiconductor memories

NASA Technical Reports Server (NTRS)

Stassinopoulos, E. G.; Brucker, G. J.; Stauffer, C. A.

1996-01-01

This article presents an analysis of radiation effects for several select device types and technologies aboard the Combined Release and Radiation Effects Satellite (CRRES) satellite. These space-flight measurements covered a period of about 14 months of mission lifetime. Single Event Upset (SEU) data of the investigated devices from the Microelectronics Package (MEP) were processed and analyzed. Valid upset measurements were determined by correcting for invalid readings, hard failures, missing data tapes (thus voids in data), and periods over which devices were disabled from interrogation. The basic resolution time of the measurement system was confirmed to be 2 s. Lessons learned, important findings, and recommendations are presented.

Laser-machined piezoelectric cantilevers for mechanical energy harvesting.

PubMed

Kim, HyunUk; Bedekar, Vishwas; Islam, Rashed Adnan; Lee, Woo-Ho; Leo, Don; Priya, Shashank

2008-09-01

In this study, we report results on a piezoelectric- material-based mechanical energy-harvesting device that was fabricated by combining laser machining with microelectronics packaging technology. It was found that the laser-machining process did not have significant effect on the electrical properties of piezoelectric material. The fabricated device was tested in the low-frequency regime of 50 to 1000 Hz at constant force of 8 g (where g = 9.8 m/s(2)). The device was found to generate continuous power of 1.13 microW at 870 Hz across a 288.5 kOmega load with a power density of 301.3 microW/cm(3).

Listening to Brain Microcircuits for Interfacing With External World-Progress in Wireless Implantable Microelectronic Neuroengineering Devices: Experimental systems are described for electrical recording in the brain using multiple microelectrodes and short range implantable or wearable broadcasting units.

PubMed

Nurmikko, Arto V; Donoghue, John P; Hochberg, Leigh R; Patterson, William R; Song, Yoon-Kyu; Bull, Christopher W; Borton, David A; Laiwalla, Farah; Park, Sunmee; Ming, Yin; Aceros, Juan

2010-01-01

Acquiring neural signals at high spatial and temporal resolution directly from brain microcircuits and decoding their activity to interpret commands and/or prior planning activity, such as motion of an arm or a leg, is a prime goal of modern neurotechnology. Its practical aims include assistive devices for subjects whose normal neural information pathways are not functioning due to physical damage or disease. On the fundamental side, researchers are striving to decipher the code of multiple neural microcircuits which collectively make up nature's amazing computing machine, the brain. By implanting biocompatible neural sensor probes directly into the brain, in the form of microelectrode arrays, it is now possible to extract information from interacting populations of neural cells with spatial and temporal resolution at the single cell level. With parallel advances in application of statistical and mathematical techniques tools for deciphering the neural code, extracted populations or correlated neurons, significant understanding has been achieved of those brain commands that control, e.g., the motion of an arm in a primate (monkey or a human subject). These developments are accelerating the work on neural prosthetics where brain derived signals may be employed to bypass, e.g., an injured spinal cord. One key element in achieving the goals for practical and versatile neural prostheses is the development of fully implantable wireless microelectronic "brain-interfaces" within the body, a point of special emphasis of this paper.

Single-chip microprocessor that communicates directly using light

NASA Astrophysics Data System (ADS)

Sun, Chen; Wade, Mark T.; Lee, Yunsup; Orcutt, Jason S.; Alloatti, Luca; Georgas, Michael S.; Waterman, Andrew S.; Shainline, Jeffrey M.; Avizienis, Rimas R.; Lin, Sen; Moss, Benjamin R.; Kumar, Rajesh; Pavanello, Fabio; Atabaki, Amir H.; Cook, Henry M.; Ou, Albert J.; Leu, Jonathan C.; Chen, Yu-Hsin; Asanović, Krste; Ram, Rajeev J.; Popović, Miloš A.; Stojanović, Vladimir M.

2015-12-01

Data transport across short electrical wires is limited by both bandwidth and power density, which creates a performance bottleneck for semiconductor microchips in modern computer systems—from mobile phones to large-scale data centres. These limitations can be overcome by using optical communications based on chip-scale electronic-photonic systems enabled by silicon-based nanophotonic devices8. However, combining electronics and photonics on the same chip has proved challenging, owing to microchip manufacturing conflicts between electronics and photonics. Consequently, current electronic-photonic chips are limited to niche manufacturing processes and include only a few optical devices alongside simple circuits. Here we report an electronic-photonic system on a single chip integrating over 70 million transistors and 850 photonic components that work together to provide logic, memory, and interconnect functions. This system is a realization of a microprocessor that uses on-chip photonic devices to directly communicate with other chips using light. To integrate electronics and photonics at the scale of a microprocessor chip, we adopt a ‘zero-change’ approach to the integration of photonics. Instead of developing a custom process to enable the fabrication of photonics, which would complicate or eliminate the possibility of integration with state-of-the-art transistors at large scale and at high yield, we design optical devices using a standard microelectronics foundry process that is used for modern microprocessors. This demonstration could represent the beginning of an era of chip-scale electronic-photonic systems with the potential to transform computing system architectures, enabling more powerful computers, from network infrastructure to data centres and supercomputers.

Low-temperature atomic layer deposition of TiO{sub 2} thin layers for the processing of memristive devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Porro, Samuele, E-mail: samuele.porro@polito.it; Conti, Daniele; Guastella, Salvatore

2016-01-15

Atomic layer deposition (ALD) represents one of the most fundamental techniques capable of satisfying the strict technological requirements imposed by the rapidly evolving electronic components industry. The actual scaling trend is rapidly leading to the fabrication of nanoscaled devices able to overcome limits of the present microelectronic technology, of which the memristor is one of the principal candidates. Since their development in 2008, TiO{sub 2} thin film memristors have been identified as the future technology for resistive random access memories because of their numerous advantages in producing dense, low power-consuming, three-dimensional memory stacks. The typical features of ALD, such asmore » self-limiting and conformal deposition without line-of-sight requirements, are strong assets for fabricating these nanosized devices. This work focuses on the realization of memristors based on low-temperature ALD TiO{sub 2} thin films. In this process, the oxide layer was directly grown on a polymeric photoresist, thus simplifying the fabrication procedure with a direct liftoff patterning instead of a complex dry etching process. The TiO{sub 2} thin films deposited in a temperature range of 120–230 °C were characterized via Raman spectroscopy and x-ray photoelectron spectroscopy, and electrical current–voltage measurements taken in voltage sweep mode were employed to confirm the existence of resistive switching behaviors typical of memristors. These measurements showed that these low-temperature devices exhibit an ON/OFF ratio comparable to that of a high-temperature memristor, thus exhibiting similar performances with respect to memory applications.« less

Single-chip microprocessor that communicates directly using light.

PubMed

Sun, Chen; Wade, Mark T; Lee, Yunsup; Orcutt, Jason S; Alloatti, Luca; Georgas, Michael S; Waterman, Andrew S; Shainline, Jeffrey M; Avizienis, Rimas R; Lin, Sen; Moss, Benjamin R; Kumar, Rajesh; Pavanello, Fabio; Atabaki, Amir H; Cook, Henry M; Ou, Albert J; Leu, Jonathan C; Chen, Yu-Hsin; Asanović, Krste; Ram, Rajeev J; Popović, Miloš A; Stojanović, Vladimir M

2015-12-24

Data transport across short electrical wires is limited by both bandwidth and power density, which creates a performance bottleneck for semiconductor microchips in modern computer systems--from mobile phones to large-scale data centres. These limitations can be overcome by using optical communications based on chip-scale electronic-photonic systems enabled by silicon-based nanophotonic devices. However, combining electronics and photonics on the same chip has proved challenging, owing to microchip manufacturing conflicts between electronics and photonics. Consequently, current electronic-photonic chips are limited to niche manufacturing processes and include only a few optical devices alongside simple circuits. Here we report an electronic-photonic system on a single chip integrating over 70 million transistors and 850 photonic components that work together to provide logic, memory, and interconnect functions. This system is a realization of a microprocessor that uses on-chip photonic devices to directly communicate with other chips using light. To integrate electronics and photonics at the scale of a microprocessor chip, we adopt a 'zero-change' approach to the integration of photonics. Instead of developing a custom process to enable the fabrication of photonics, which would complicate or eliminate the possibility of integration with state-of-the-art transistors at large scale and at high yield, we design optical devices using a standard microelectronics foundry process that is used for modern microprocessors. This demonstration could represent the beginning of an era of chip-scale electronic-photonic systems with the potential to transform computing system architectures, enabling more powerful computers, from network infrastructure to data centres and supercomputers.

Trends in Microfabrication Capabilities & Device Architectures.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bauer, Todd; Jones, Adam; Lentine, Anthony L.

The last two decades have seen an explosion in worldwide R&D, enabling fundamentally new capabilities while at the same time changing the international technology landscape. The advent of technologies for continued miniaturization and electronics feature size reduction, and for architectural innovations, will have many technical, economic, and national security implications. It is important to anticipate possible microelectronics development directions and their implications on US national interests. This report forecasts and assesses trends and directions for several potentially disruptive microfabrication capabilities and device architectures that may emerge in the next 5-10 years.

Establishing a Novel Modeling Tool: A Python-Based Interface for a Neuromorphic Hardware System

PubMed Central

Brüderle, Daniel; Müller, Eric; Davison, Andrew; Muller, Eilif; Schemmel, Johannes; Meier, Karlheinz

2008-01-01

Neuromorphic hardware systems provide new possibilities for the neuroscience modeling community. Due to the intrinsic parallelism of the micro-electronic emulation of neural computation, such models are highly scalable without a loss of speed. However, the communities of software simulator users and neuromorphic engineering in neuroscience are rather disjoint. We present a software concept that provides the possibility to establish such hardware devices as valuable modeling tools. It is based on the integration of the hardware interface into a simulator-independent language which allows for unified experiment descriptions that can be run on various simulation platforms without modification, implying experiment portability and a huge simplification of the quantitative comparison of hardware and simulator results. We introduce an accelerated neuromorphic hardware device and describe the implementation of the proposed concept for this system. An example setup and results acquired by utilizing both the hardware system and a software simulator are demonstrated. PMID:19562085

Establishing a novel modeling tool: a python-based interface for a neuromorphic hardware system.

PubMed

Brüderle, Daniel; Müller, Eric; Davison, Andrew; Muller, Eilif; Schemmel, Johannes; Meier, Karlheinz

2009-01-01

Neuromorphic hardware systems provide new possibilities for the neuroscience modeling community. Due to the intrinsic parallelism of the micro-electronic emulation of neural computation, such models are highly scalable without a loss of speed. However, the communities of software simulator users and neuromorphic engineering in neuroscience are rather disjoint. We present a software concept that provides the possibility to establish such hardware devices as valuable modeling tools. It is based on the integration of the hardware interface into a simulator-independent language which allows for unified experiment descriptions that can be run on various simulation platforms without modification, implying experiment portability and a huge simplification of the quantitative comparison of hardware and simulator results. We introduce an accelerated neuromorphic hardware device and describe the implementation of the proposed concept for this system. An example setup and results acquired by utilizing both the hardware system and a software simulator are demonstrated.

Nanomaterials at the neural interface.

PubMed

Scaini, Denis; Ballerini, Laura

2018-06-01

Interfacing the nervous system with devices able to efficiently record or modulate the electrical activity of neuronal cells represents the underlying foundation of future theranostic applications in neurology and of current openings in neuroscience research. These devices, usually sensing cell activity via microelectrodes, should be characterized by safe working conditions in the biological milieu together with a well-controlled operation-life. The stable device/neuronal electrical coupling at the interface requires tight interactions between the electrode surface and the cell membrane. This neuro-electrode hybrid represents the hyphen between the soft nature of neural tissue, generating electrical signals via ion motions, and the rigid realm of microelectronics and medical devices, dealing with electrons in motion. Efficient integration of these entities is essential for monitoring, analyzing and controlling neuronal signaling but poses significant technological challenges. Improving the cell/electrode interaction and thus the interface performance requires novel engineering of (nano)materials: tuning at the nanoscale electrode's properties may lead to engineer interfacing probes that better camouflaged with their biological target. In this brief review, we highlight the most recent concepts in nanotechnologies and nanomaterials that might help reducing the mismatch between tissue and electrode, focusing on the device's mechanical properties and its biological integration with the tissue. Copyright © 2017 Elsevier Ltd. All rights reserved.

Microelectronics in F. E.: Some Personal Perceptions. An Occasional Paper.

ERIC Educational Resources Information Center

Dean, K. J.

The recent microelectronics developments are having, and will continue to have, a sharp impact on various industries in Great Britain, and thus on the capacity of the Further Education System to produce qualified graduates. To maintain a high quality of education, instructors must learn of these new developments and teach them to their vocational…

Microelectronics Status Analysis and Secondary Part Procureability Assessment of the THAAD Weapon System

DTIC Science & Technology

1999-10-01

Technical Report 5-20448 & 5- 20449 Contract No. DAAH01-98-D-R001 Delivery Order No. 34 Microelectronics Status Analysis and Secondary Part...Procureability Assessment of the THAAD Weapon System. (5-20448 & 5- 20449 ) Final Technical Report for Period 21 January 1999 through 30 September 1999...Huntsville Huntsville, AL 35899 5. FUNDING NUMBERS 8. PERFORMING ORGANIZATION REPORT NUMBER 5-20448 & 5- 20449 9. SPONSORING/MONITORING AGENCY

Energy Efficient Digital Logic Using Nanoscale Magnetic Devices

NASA Astrophysics Data System (ADS)

Lambson, Brian James

Increasing demand for information processing in the last 50 years has been largely satisfied by the steadily declining price and improving performance of microelectronic devices. Much of this progress has been made by aggressively scaling the size of semiconductor transistors and metal interconnects that microprocessors are built from. As devices shrink to the size regime in which quantum effects pose significant challenges, new physics may be required in order to continue historical scaling trends. A variety of new devices and physics are currently under investigation throughout the scientific and engineering community to meet these challenges. One of the more drastic proposals on the table is to replace the electronic components of information processors with magnetic components. Magnetic components are already commonplace in computers for their information storage capability. Unlike most electronic devices, magnetic materials can store data in the absence of a power supply. Today's magnetic hard disk drives can routinely hold billions of bits of information and are in widespread commercial use. Their ability to function without a constant power source hints at an intrinsic energy efficiency. The question we investigate in this dissertation is whether or not this advantage can be extended from information storage to the notoriously energy intensive task of information processing. Several proof-of-concept magnetic logic devices were proposed and tested in the past decade. In this dissertation, we build on the prior work by answering fundamental questions about how magnetic devices achieve such high energy efficiency and how they can best function in digital logic applications. The results of this analysis are used to suggest and test improvements to nanomagnetic computing devices. Two of our results are seen as especially important to the field of nanomagnetic computing: (1) we show that it is possible to operate nanomagnetic computers at the fundamental thermodyanimic limits of computation and (2) we develop a nanomagnet with a unique shape that is engineered to significantly improve the reliability of nanomagnetic logic.

Scalable High-Performance Ultraminiature Graphene Micro-Supercapacitors by a Hybrid Technique Combining Direct Writing and Controllable Microdroplet Transfer.

PubMed

Shen, Daozhi; Zou, Guisheng; Liu, Lei; Zhao, Wenzheng; Wu, Aiping; Duley, Walter W; Zhou, Y Norman

2018-02-14

Miniaturization of energy storage devices can significantly decrease the overall size of electronic systems. However, this miniaturization is limited by the reduction of electrode dimensions and the reproducible transfer of small electrolyte drops. This paper reports first a simple scalable direct writing method for the production of ultraminiature microsupercapacitor (MSC) electrodes, based on femtosecond laser reduced graphene oxide (fsrGO) interlaced pads. These pads, separated by 2 μm spacing, are 100 μm long and 8 μm wide. A second stage involves the accurate transfer of an electrolyte microdroplet on top of each individual electrode, which can avoid any interference of the electrolyte with other electronic components. Abundant in-plane mesopores in fsrGO induced by a fs laser together with ultrashort interelectrode spacing enables MSCs to exhibit a high specific capacitance (6.3 mF cm -2 and 105 F cm -3 ) and ∼100% retention after 1000 cycles. An all graphene resistor-capacitor (RC) filter is also constructed by combining the MSC and a fsrGO resistor, which is confirmed to exhibit highly enhanced performance characteristics. This new hybrid technique combining fs laser direct writing and precise microdroplet transfer easily enables scalable production of ultraminiature MSCs, which is believed to be significant for practical application of micro-supercapacitor microelectronic systems.

Radiation Effects: Overview for Space Environment Specialists

NASA Technical Reports Server (NTRS)

Ladbury, Ray

2017-01-01

Radiation Hardness Assurance (RHA) methodologies need to evolve to capitalize on the increased flexibility introduced by new models of space radiation environments. This presentation examines the characteristics of various radiation threats, the sources of error that RHA methodologies seek to control and the contributions of environment models to those errors. The influence of trends in microelectronic device technology is also considered.

2015 Marine Corps Security Environment Forecast: Futures 2030-2045

DTIC Science & Technology

2015-01-01

The technologies that make the iPhone “smart” were publically funded—the Internet, wireless networks, the global positioning system, microelectronics...Energy Revolution (63 percent);  Internet of Things (ubiquitous sensors embedded in interconnected computing devices) (50 percent);  “Sci-Fi...Neuroscience & artificial intelligence - Sensors /control systems -Power & energy -Human-robot interaction Robots/autonomous systems will become part of the

Fundamental Insight on Developing Low Dielectric Constant Polyimides

NASA Technical Reports Server (NTRS)

Simpson, J. O.; SaintClair, A. K.

1997-01-01

Thermally stable, durable, insulative polyimides are in great demand for the fabrication of microelectronic devices. In this investigation dielectric and optical properties have been studied for several series of aromatic polyimides. The effect of polarizability, fluorine content, and free volume on dielectric constant was examined. In general, minimizing polarizability, maximizing free volume and fluorination all lowered dielectric constants in the polyimides studied.

Depositing bulk or micro-scale electrodes

DOEpatents

Shah, Kedar G.; Pannu, Satinderpall S.; Tolosa, Vanessa; Tooker, Angela C.; Sheth, Heeral J.; Felix, Sarah H.; Delima, Terri L.

2016-11-01

Thicker electrodes are provided on microelectronic device using thermo-compression bonding. A thin-film electrical conducting layer forms electrical conduits and bulk depositing provides an electrode layer on the thin-film electrical conducting layer. An insulating polymer layer encapsulates the electrically thin-film electrical conducting layer and the electrode layer. Some of the insulating layer is removed to expose the electrode layer.

Alpha particle-induced soft errors in microelectronic devices. I

NASA Astrophysics Data System (ADS)

Redman, D. J.; Sega, R. M.; Joseph, R.

1980-03-01

The article provides a tutorial review and trend assessment of the problem of alpha particle-induced soft errors in VLSI memories. Attention is given to an analysis of the design evolution of modern ICs, and the characteristics of alpha particles and their origin in IC packaging are reviewed. Finally, the process of an alpha particle penetrating an IC is examined.

Fabrication of polyimide based microfluidic channels for biosensor devices

NASA Astrophysics Data System (ADS)

Zulfiqar, Azeem; Pfreundt, Andrea; Svendsen, Winnie Edith; Dimaki, Maria

2015-03-01

The ever-increasing complexity of the fabrication process of Point-of-care (POC) devices, due to high demand of functional versatility, compact size and ease-of-use, emphasizes the need of multifunctional materials that can be used to simplify this process. Polymers, currently in use for the fabrication of the often needed microfluidic channels, have limitations in terms of their physicochemical properties. Therefore, the use of a multipurpose biocompatible material with better resistance to the chemical, thermal and electrical environment, along with capability of forming closed channel microfluidics is inevitable. This paper demonstrates a novel technique of fabricating microfluidic devices using polyimide (PI) which fulfills the aforementioned properties criteria. A fabrication process to pattern microfluidic channels, using partially cured PI, has been developed by using a dry etching method. The etching parameters are optimized and compared to those used for fully cured PI. Moreover, the formation of closed microfluidic channel on wafer level by bonding two partially cured PI layers or a partially cured PI to glass with high bond strength has been demonstrated. The reproducibility in uniformity of PI is also compared to the most commonly used SU8 polymer, which is a near UV sensitive epoxy resin. The potential applications of PI processing are POC and biosensor devices integrated with microelectronics.

ASIC implementation of recursive scaled discrete cosine transform algorithm

NASA Astrophysics Data System (ADS)

On, Bill N.; Narasimhan, Sam; Huang, Victor K.

1994-05-01

A program to implement the Recursive Scaled Discrete Cosine Transform (DCT) algorithm as proposed by H. S. Hou has been undertaken at the Institute of Microelectronics. Implementation of the design was done using top-down design methodology with VHDL (VHSIC Hardware Description Language) for chip modeling. When the VHDL simulation has been satisfactorily completed, the design is synthesized into gates using a synthesis tool. The architecture of the design consists of two processing units together with a memory module for data storage and transpose. Each processing unit is composed of four pipelined stages which allow the internal clock to run at one-eighth (1/8) the speed of the pixel clock. Each stage operates on eight pixels in parallel. As the data flows through each stage, there are various adders and multipliers to transform them into the desired coefficients. The Scaled IDCT was implemented in a similar fashion with the adders and multipliers rearranged to perform the inverse DCT algorithm. The chip has been verified using Field Programmable Gate Array devices. The design is operational. The combination of fewer multiplications required and pipelined architecture give Hou's Recursive Scaled DCT good potential of achieving high performance at a low cost in using Very Large Scale Integration implementation.

Molten-Metal Droplet Deposition on a Moving Substrate in Microgravity: Aiding the Development of Novel Technologies for Microelectronic Assembly

NASA Technical Reports Server (NTRS)

Megaridis, C. M.; Bayer, I. S.; Poulikakos, D.; Nayagam, V.

2002-01-01

Driven by advancements in microelectronics manufacturing, this research investigates the oblique (non-axisymmetric) impact of liquid-metal droplets on flat substrates. The problem of interest is relevant to the development of the novel technology of on-demand dispension (printing) of microscopic solder deposits for the surface mounting of microelectronic devices. The technology, known as solder jetting, features on-demand deposition of miniature solder droplets (30 to 120 microns in diameter) in very fine, very accurate patterns using techniques analogous to those developed for the ink-jet printing industry. Despite its promise, severe limitations exist currently with regards to the throughput rates of the technology; some of these limitations are largely due to the lack of the capability for reliable prediction of solder bump positioning and shapes, especially under ballistic deposition conditions where the droplet impact phenomena are inherently three-dimensional. The study consists of a theoretical and an experimental component. The theoretical work uses a finite element formulation to simulate numerically the non-axisymmetric (3-D) fluid mechanics and heat transfer phenomena of a liquid solder droplet impacting at an angle alpha on a flat substrate. The work focuses on the pre-solidification regime. The modeling of the most challenging fluid mechanics part of the process has been completed successfully. It is based upon the full laminar Navier-Stokes equations employing a Lagrangian frame of reference. Due to the large droplet deformation, the surface (skin) as well as the volumetric mesh have to be regenerated during the calculations in order to maintain the high accuracy of the numerical scheme. The pressure and velocity fields are then interpolated on the newly created mesh. The numerical predictions are being tested against experiments, for cases where wetting phenomena are not important. For the impact parameters used in the example shown (We = 2.38, Fr = 16300, Re = 157), the droplet rolls along the substrate, but its shape remains practically axisymmetric for all impact angles within the range from 0 to 60 deg. Interestingly, the substrate/droplet contact area during the recoiling phase of the impact is not a monotonically decreasing function of time. The experimental component of the research tests the numerical predictions and provides necessary input data (contact angles) for the theoretical model. The experiments are performed in microgravity (2.2s drop tower of the NASA GRC) in order to allow for the use of mm-size solder droplets, which make feasible the performance of accurate measurements, while maintaining similitude of the relevant fluid dynamic groups (Re, Fr, We, Ste). Preliminary oblique impact experiments have been performed using water droplets in normal gravity.

Development of graphene process control by industrial optical spectroscopy setup

NASA Astrophysics Data System (ADS)

Fursenko, O.; Lukosius, M.; Lupina, G.; Bauer, J.; Villringer, C.; Mai, A.

2017-06-01

The successful integration of graphene into microelectronic devices depends strongly on the availability of fast and nondestructive characterization methods of graphene grown by CVD on large diameter production wafers [1-3] which are in the interest of the semiconductor industry. Here, a high-throughput optical metrology method for measuring the thickness and uniformity of large-area graphene sheets is demonstrated. The method is based on the combination of spectroscopic ellipsometry and normal incidence reflectometry in UV-Vis wavelength range (200-800 nm) with small light spots ( 30 μm2) realized in wafer optical metrology tool. In the first step graphene layers were transferred on a SiO2/Si substrate in order to determine the optical constants of graphene by the combination of multi-angle ellipsometry and reflectometry. Then these data were used for the development of a process control recipe of CVD graphene on 200 mm Ge(100)/Si(100) wafers. The graphene layer quality was additionally monitored by Raman spectroscopy. Atomic force microscopy measurements were performed for micro topography evaluation. In consequence, a robust recipe for unambiguous thickness monitoring of all components of a multilayer film stack, including graphene, surface residuals or interface layer underneath graphene and surface roughness is developed. Optical monitoring of graphene thickness uniformity over a wafer has shown an excellent long term stability (s=0.004 nm) regardless of the growth of interfacial GeO2 and surface roughness. The sensitivity of the optical identification of graphene during microelectronic processing was evaluated. This optical metrology technique with combined data collection exhibit a fast and highly precise method allowing one an unambiguous detection of graphene after transferring as well as after the CVD deposition process on a Ge(100)/Si(100) wafer. This approach is well suited for industrial applications due to its repeatability and flexibility.

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.; Archer, Leo B.; Brown, George A.; Wallace, Robert M.

2000-01-01

An enhancement of an electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure during an anneal in an atmosphere containing hydrogen gas. Device operation is enhanced by concluding this anneal step with a sudden cooling. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronics elements on the same silicon substrate.

Scaled CMOS Technology Reliability Users Guide

NASA Technical Reports Server (NTRS)

White, Mark

2010-01-01

The desire to assess the reliability of emerging scaled microelectronics technologies through faster reliability trials and more accurate acceleration models is the precursor for further research and experimentation in this relevant field. The effect of semiconductor scaling on microelectronics product reliability is an important aspect to the high reliability application user. From the perspective of a customer or user, who in many cases must deal with very limited, if any, manufacturer's reliability data to assess the product for a highly-reliable application, product-level testing is critical in the characterization and reliability assessment of advanced nanometer semiconductor scaling effects on microelectronics reliability. A methodology on how to accomplish this and techniques for deriving the expected product-level reliability on commercial memory products are provided.Competing mechanism theory and the multiple failure mechanism model are applied to the experimental results of scaled SDRAM products. Accelerated stress testing at multiple conditions is applied at the product level of several scaled memory products to assess the performance degradation and product reliability. Acceleration models are derived for each case. For several scaled SDRAM products, retention time degradation is studied and two distinct soft error populations are observed with each technology generation: early breakdown, characterized by randomly distributed weak bits with Weibull slope (beta)=1, and a main population breakdown with an increasing failure rate. Retention time soft error rates are calculated and a multiple failure mechanism acceleration model with parameters is derived for each technology. Defect densities are calculated and reflect a decreasing trend in the percentage of random defective bits for each successive product generation. A normalized soft error failure rate of the memory data retention time in FIT/Gb and FIT/cm2 for several scaled SDRAM generations is presented revealing a power relationship. General models describing the soft error rates across scaled product generations are presented. The analysis methodology may be applied to other scaled microelectronic products and their key parameters.

Advanced Proton Conducting Polymer Electrolytes for Electrochemical Capacitors

NASA Astrophysics Data System (ADS)

Gao, Han

Research on solid electrochemical energy storage devices aims to provide high performance, low cost, and safe operation solutions for emerging applications from flexible consumer electronics to microelectronics. Polymer electrolytes, minimizing device sealing and liquid electrolyte leakage, are key enablers for these next-generation technologies. In this thesis, a novel proton-conducing polymer electrolyte system has been developed using heteropolyacids (HPAs) and polyvinyl alcohol for electrochemical capacitors. A thorough understanding of proton conduction mechanisms of HPAs together with the interactions among HPAs, additives, and polymer framework has been developed. Structure and chemical bonding of the electrolytes have been studied extensively to identify and elucidate key attributes affecting the electrolyte properties. Numerical models describing the proton conduction mechanism have been applied to differentiate those attributes. The performance optimization of the polymer electrolytes through additives, polymer structural modifications, and synthesis of alternative HPAs has achieved several important milestones, including: (a) high proton mobility and proton density; (b) good ion accessibility at electrode/electrolyte interface; (c) wide electrochemical stability window; and (d) good environmental stability. Specifically, high proton mobility has been addressed by cross-linking the polymer framework to improve the water storage capability at normal-to-high humidity conditions (e.g. 50-80% RH) as well as by incorporating nano-fillers to enhance the water retention at normal humidity levels (e.g. 30-60% RH). High proton density has been reached by utilizing additional proton donors (i.e. acidic plasticizers) and by developing different HPAs. Good ion accessibility has been achieved through addition of plasticizers. Electrochemical stability window of the electrolyte system has also been investigated and expanded by utilizing HPAs with different heteroatoms. The optimized polymer electrolyte demonstrated even higher proton conductivity than pure HPAs and the enabled electrochemical capacitors have demonstrated an exceptionally high rate capability of 50 Vs-1 in cyclic voltammograms and a 10 ms time constant in impedance analyses.

Towards co-packaging of photonics and microelectronics in existing manufacturing facilities

NASA Astrophysics Data System (ADS)

Janta-Polczynski, Alexander; Cyr, Elaine; Bougie, Jerome; Drouin, Alain; Langlois, Richard; Childers, Darrell; Takenobu, Shotaro; Taira, Yoichi; Lichoulas, Ted W.; Kamlapurkar, Swetha; Engelmann, Sebastian; Fortier, Paul; Boyer, Nicolas; Barwicz, Tymon

2018-02-01

The impact of integrated photonics on optical interconnects is currently muted by challenges in photonic packaging and in the dense integration of photonic modules with microelectronic components on printed circuit boards. Single mode optics requires tight alignment tolerance for optical coupling and maintaining this alignment in a cost-efficient package can be challenging during thermal excursions arising from downstream microelectronic assembly processes. In addition, the form factor of typical fiber connectors is incompatible with the dense module integration expected on printed circuit boards. We have implemented novel approaches to interfacing photonic chips to standard optical fibers. These leverage standard high throughput microelectronic assembly tooling and self-alignment techniques resulting in photonic packaging that is scalable in manufacturing volume and in the number of optical IOs per chip. In addition, using dense optical fiber connectors with space-efficient latching of fiber patch cables results in compact module size and efficient board integration, bringing the optics closer to the logic chip to alleviate bandwidth bottlenecks. This packaging direction is also well suited for embedding optics in multi-chip modules, including both photonic and microelectronic chips. We discuss the challenges and rewards in this type of configuration such as thermal management and signal integrity.

Ultralow thermal conductivity in all-inorganic halide perovskites

PubMed Central

Li, Huashan; Wong, Andrew B.; Zhang, Dandan; Lai, Minliang; Yu, Yi; Kong, Qiao; Lin, Elbert; Urban, Jeffrey J.; Grossman, Jeffrey C.; Yang, Peidong

2017-01-01

Controlling the flow of thermal energy is crucial to numerous applications ranging from microelectronic devices to energy storage and energy conversion devices. Here, we report ultralow lattice thermal conductivities of solution-synthesized, single-crystalline all-inorganic halide perovskite nanowires composed of CsPbI3 (0.45 ± 0.05 W·m−1·K−1), CsPbBr3 (0.42 ± 0.04 W·m−1·K−1), and CsSnI3 (0.38 ± 0.04 W·m−1·K−1). We attribute this ultralow thermal conductivity to the cluster rattling mechanism, wherein strong optical–acoustic phonon scatterings are driven by a mixture of 0D/1D/2D collective motions. Remarkably, CsSnI3 possesses a rare combination of ultralow thermal conductivity, high electrical conductivity (282 S·cm−1), and high hole mobility (394 cm2·V−1·s−1). The unique thermal transport properties in all-inorganic halide perovskites hold promise for diverse applications such as phononic and thermoelectric devices. Furthermore, the insights obtained from this work suggest an opportunity to discover low thermal conductivity materials among unexplored inorganic crystals beyond caged and layered structures. PMID:28760988

Ultralow thermal conductivity in all-inorganic halide perovskites

DOE PAGES

Lee, Woochul; Li, Huashan; Wong, Andrew B.; ...

2017-07-08

Controlling the flow of thermal energy is crucial to numerous applications ranging from microelectronic devices to energy storage and energy conversion devices. Here in this paper, we report ultralow lattice thermal conductivities of solution-synthesized, single-crystalline all-inorganic halide perovskite nanowires composed of CsPbI 3 (0.45 ± 0.05 W·m -1 ·K -1), CsPbBr 3 (0.42 ± 0.04 W·m -1·K -1), and CsSnI 3 (0.38 ± 0.04 W·m -1 ·K -1). We attribute this ultralow thermal conductivity to the cluster rattling mechanism, wherein strong optical–acoustic phonon scatterings are driven by a mixture of 0D/1D/2D collective motions. Remarkably, CsSnI 3 possesses a rare combinationmore » of ultralow thermal conductivity, high electrical conductivity (282 S·cm -1), and high hole mobility (394 cm 2 ·V -1 ·s -1). The unique thermal transport properties in all-inorganic halide perovskites hold promise for diverse applications such as phononic and thermoelectric devices. Furthermore, the insights obtained from this work suggest an opportunity to discover low thermal conductivity materials among unexplored inorganic crystals beyond caged and layered structures.« less

Ultralow thermal conductivity in all-inorganic halide perovskites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Woochul; Li, Huashan; Wong, Andrew B.

Controlling the flow of thermal energy is crucial to numerous applications ranging from microelectronic devices to energy storage and energy conversion devices. Here in this paper, we report ultralow lattice thermal conductivities of solution-synthesized, single-crystalline all-inorganic halide perovskite nanowires composed of CsPbI 3 (0.45 ± 0.05 W·m -1 ·K -1), CsPbBr 3 (0.42 ± 0.04 W·m -1·K -1), and CsSnI 3 (0.38 ± 0.04 W·m -1 ·K -1). We attribute this ultralow thermal conductivity to the cluster rattling mechanism, wherein strong optical–acoustic phonon scatterings are driven by a mixture of 0D/1D/2D collective motions. Remarkably, CsSnI 3 possesses a rare combinationmore » of ultralow thermal conductivity, high electrical conductivity (282 S·cm -1), and high hole mobility (394 cm 2 ·V -1 ·s -1). The unique thermal transport properties in all-inorganic halide perovskites hold promise for diverse applications such as phononic and thermoelectric devices. Furthermore, the insights obtained from this work suggest an opportunity to discover low thermal conductivity materials among unexplored inorganic crystals beyond caged and layered structures.« less

Ultralow thermal conductivity in all-inorganic halide perovskites.

PubMed

Lee, Woochul; Li, Huashan; Wong, Andrew B; Zhang, Dandan; Lai, Minliang; Yu, Yi; Kong, Qiao; Lin, Elbert; Urban, Jeffrey J; Grossman, Jeffrey C; Yang, Peidong

2017-08-15

Controlling the flow of thermal energy is crucial to numerous applications ranging from microelectronic devices to energy storage and energy conversion devices. Here, we report ultralow lattice thermal conductivities of solution-synthesized, single-crystalline all-inorganic halide perovskite nanowires composed of CsPbI 3 (0.45 ± 0.05 W·m -1 ·K -1 ), CsPbBr 3 (0.42 ± 0.04 W·m -1 ·K -1 ), and CsSnI 3 (0.38 ± 0.04 W·m -1 ·K -1 ). We attribute this ultralow thermal conductivity to the cluster rattling mechanism, wherein strong optical-acoustic phonon scatterings are driven by a mixture of 0D/1D/2D collective motions. Remarkably, CsSnI 3 possesses a rare combination of ultralow thermal conductivity, high electrical conductivity (282 S·cm -1 ), and high hole mobility (394 cm 2 ·V -1 ·s -1 ). The unique thermal transport properties in all-inorganic halide perovskites hold promise for diverse applications such as phononic and thermoelectric devices. Furthermore, the insights obtained from this work suggest an opportunity to discover low thermal conductivity materials among unexplored inorganic crystals beyond caged and layered structures.

Advanced space system concepts and their orbital support needs (1980 - 2000). Volume 2: Final report

NASA Technical Reports Server (NTRS)

Bekey, I.; Mayer, H. L.; Wolfe, M. G.

1976-01-01

The results are presented of a study which identifies over 100 new and highly capable space systems for the 1980-2000 time period: civilian systems which could bring benefits to large numbers of average citizens in everyday life, much enhance the kinds and levels of public services, increase the economic motivation for industrial investment in space, expand scientific horizons; and, in the military area, systems which could materially alter current concepts of tactical and strategic engagements. The requirements for space transportation, orbital support, and technology for these systems are derived, and those requirements likely to be shared between NASA and the DoD in the time period identified. The high leverage technologies for the time period are identified as very large microwave antennas and optics, high energy power subsystems, high precision and high power lasers, microelectronic circuit complexes and data processors, mosaic solid state sensing devices, and long-life cryogenic refrigerators.

Growth and characterization of zinc oxide and PZT films for micromachined acoustic wave devices

NASA Astrophysics Data System (ADS)

Yoon, Sang Hoon

The ability to detect the presence of low concentrations of harmful substances, such as biomolecular agents, warfare agents, and pathogen cells, in our environment and food chain would greatly advance our safety, provide more sensitive tools for medical diagnostics, and protect against terrorism. Acoustic wave (AW) devices have been widely studied for such applications due to several attractive properties, such as rapid response, reliability, portability, ease of use, and low cost. The principle of these sensors is based on a fundamental feature of the acoustic wave that is generated and detected by a piezoelectric material. The performance of the device, therefore, greatly depends on the properties of piezoelectric thin film. The required properties include a high piezoelectric coefficient and high electromechanical coefficients. The surface roughness and the mechanical properties, such as Young's modulus and hardness, are also factors that can affect the wave propagation of the device. Since the film properties are influenced by the structure of the material, understanding thin film structure is very important for the design of high-performance piezoelectric MEMS devices for biosensor applications. In this research, two piezoelectric thin film materials were fabricated and investigated. ZnO films were fabricated by CSD (Chemical Solution Deposition) and sputtering, and PZT films were fabricated by CSD only. The process parameters for solution derived ZnO and PZT films, such as the substrate type, the effect of the chelating agent, and heat treatment, were studied to find the relationship between process parameters and thin film structure. In the case of the sputtered ZnO films, the process gas types and their ratio, heat treatment in situ, and post deposition were investigated. The key results of systematic experiments show that the combined influence of chemical modifiers and substrates in chemical solution deposition have an effect on the crystallographic orientation of the films, which is explained by the phase transformation that occurs from amorphous pyrolized film to crystalline film. Sputtered ZnO films do not show a strong dependence on the parameters, possibly indicating a reduced energy barrier for the growth of ZnO film due to plasma energy. Based on an understanding of the relationship between process and thin film structure, the growth mechanism of CSD ZnO is proposed. The devices are fabricated on 4-inch silicon wafers by a microelectronic fabrication method. The fabrication procedure and issues relating to device fabrication are discussed.

Reproductive Hazards Still Persist in the Microelectronics Industry: Increased Risk of Spontaneous Abortion and Menstrual Aberration among Female Workers in the Microelectronics Industry in South Korea.

PubMed

Kim, Inah; Kim, Myoung-Hee; Lim, Sinye

2015-01-01

Despite the global expansion of supply chains and changes to the production process, few studies since the mid-1990 s and 2000s have examined reproductive risks of the microelectronics industry; we examined the reproductive risks among female microelectronics workers in South Korea. Based on claim data from the National Health Insurance (2008-2012), we estimated age-specific rates of spontaneous abortion (SAB) and menstrual aberration (MA) among women aged 20 to 39 years. We compared data between microelectronics workers and three different control groups: economically inactive women, the working population as a whole, and workers employed in the bank industry. For an effect measure, age-stratified relative risks (RRs) were estimated. Female workers in the microelectronics industry showed significantly higher risk for SAB and MA compared to control groups. The RRs for SAB with reference to economically inactive women, working population, and bank workers in their twenties were 1.57, 1.40, and 1.37, respectively, and the RRs for MA among females in their twenties were 1.54, 1.38, and 1.48, respectively. For women in their thirties, RRs for SAB were 1.58, 1.67, and 1.13, and those for MA were 1.25, 1.35, and 1.23 compared to the three control populations, respectively. All RRs were statistically significant at a level of 0.05, except for the SAB case comparison with bank workers in their thirties. Despite technical innovations and health and safety measures, female workers in microelectronics industry in South Korea have high rates of SAB and MA, suggesting continued exposure to reproductive hazards. Further etiologic studies based on primary data collection and careful surveillance are required to confirm these results.

Channel add-drop filter based on dual photonic crystal cavities in push-pull mode.

PubMed

Poulton, Christopher V; Zeng, Xiaoge; Wade, Mark T; Popović, Miloš A

2015-09-15

We demonstrate an add-drop filter based on a dual photonic crystal nanobeam cavity system that emulates the operation of a traveling wave resonator, and, thus, provides separation of the through and drop port transmission from the input port. The device is on a 3×3  mm chip fabricated in an advanced microelectronics silicon-on-insulator complementary metal-oxide semiconductor (SOI CMOS) process (IBM 45 nm SOI) without any foundry process modifications. The filter shows 1 dB of insertion loss in the drop port with a 3 dB bandwidth of 64 GHz, and 16 dB extinction in the through port. To the best of our knowledge, this is the first implementation of a port-separating, add-drop filter based on standing wave cavities coupled to conventional waveguides, and demonstrates a performance that suggests potential for photonic crystal devices within optical immersion lithography-based advanced CMOS electronics-photonics integration.

Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages

DOE PAGES

Carlton, Holly D.; Elmer, John W.; Li, Yan; ...

2016-04-13

For this study synchrotron radiation micro-­tomography, a non-destructive three-dimensional imaging technique, is employed to investigate an entire microelectronic package with a cross-sectional area of 16 x 16 mm. Due to the synchrotron’s high flux and brightness the sample was imaged in just 3 minutes with an 8.7 μm spatial resolution.

Preliminary Flight Results of the Microelectronics and Photonics Test Bed: NASA DR1773 Fiber Optic Data Bus Experiment

NASA Technical Reports Server (NTRS)

Jackson, George L.; LaBel, Kenneth A.; Marshall, Cheryl; Barth, Janet; Seidleck, Christina; Marshall, Paul

1998-01-01

NASA Goddard Spare Flight Center's (GSFC) Dual Rate 1773 (DR1773) Experiment on the Microelectronic and Photonic Test Bed (MPTB) has provided valuable information on the performance of the AS 1773 fiber optic data bus in the space radiation environment. Correlation of preliminary experiment data to ground based radiation test results show the AS 1773 bus is employable in future spacecraft applications requiring radiation tolerant communication links.

Investigation of discrete component chip mounting technology for hybrid microelectronic circuits

NASA Technical Reports Server (NTRS)

Caruso, S. V.; Honeycutt, J. O.

1975-01-01

The use of polymer adhesives for high reliability microcircuit applications is a radical deviation from past practices in electronic packaging. Bonding studies were performed using two gold-filled conductive adhesives, 10/90 tin/lead solder and Indalloy no. 7 solder. Various types of discrete components were mounted on ceramic substrates using both thick-film and thin-film metallization. Electrical and mechanical testing were performed on the samples before and after environmental exposure to MIL-STD-883 screening tests.

Microelectronic superconducting crossover and coil

DOEpatents

Wellstood, F.C.; Kingston, J.J.; Clarke, J.

1994-03-01

A microelectronic component comprising a crossover is provided comprising a substrate, a first high T[sub c] superconductor thin film, a second insulating thin film comprising SrTiO[sub 3]; and a third high T[sub c] superconducting film which has strips which crossover one or more areas of the first superconductor film. An in situ method for depositing all three films on a substrate is provided which does not require annealing steps and which can be opened to the atmosphere between depositions. 13 figures.

Thermally-Activated Metal-to-Glass Bonding

NASA Technical Reports Server (NTRS)

Gallagher, B. D.

1986-01-01

Hermetic seals formed easily by use of metallo-organic film. Metallo-organic film thermally bonded to glass and soldered or welded to form hermetic seal. Film applied as ink consisting of silver neodecanoate in xylene. Relative amounts of ingredients selected to obtain desired viscosity. Material applied by printing or even by scribing with pen. Sealing technique useful in making solar-cell modules, microelectronic packages, and other hermetic silicon devices.

USSR and Eastern Europe Scientific Abstracts, Electronics and Electrical Engineering, Number 27

DTIC Science & Technology

1977-02-10

input and output conditions. The power section of the circuit is modified to permit triacs and thyristors, respectively, to function. The purpose of the...electronic materials, components, and devices, on circuit theory, pulse techniques, electromagnetic wave propagation, radar, quantum electronic theory...Lasers, Masers, Holography, Quasi-Optical 20 Microelectronics and General Circuit Theory and Information 21 Radars and Radio Wavigati on 22

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alloatti, L., E-mail: luca.alloatti@gmail.com; Cheian, D.; Ram, R. J.

A microring depletion modulator is demonstrated with T-shaped lateral p-n junctions used to realize efficient modulation while maximizing the RC limited bandwidth. The device having a 3 dB bandwidth of 13 GHz has been fabricated in a standard 45 nm microelectronics CMOS process. The cavity has a linewidth of 17 GHz and an average wavelength-shift of 9 pm/V in reverse-bias conditions.

Preliminary investigation of polystyrene/MoS{sub 2}-Oleylamine polymer composite for potential application as low-dielectric material in microelectronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Landi, Giovanni, E-mail: glandi@unisa.it; Department of Industrial Engineering, University of Salerno, Via G. Paolo II 132, 84084 Fisciano; Altavilla, Claudia

2015-12-17

Insulating materials play a vital role in the design and performance of electrical systems for both steady and transient state conditions. Among the other properties, also in this field, polymer nanocomposites promise to offer exciting improvements. Many studies in the last decade has witnessed significant developments in the area of nano-dielectric materials and significant effects of nano-scale fillers on electric, thermal and mechanical properties of polymeric materials have been observed. However, the developments of new and advanced materials to be used the miniaturization of electronic devices fabrication require extensive studies on electrical insulation characteristics of these materials before they canmore » be used in commercial systems. In this work, Polystyrene (PS) composites were prepared by the blend solution method using MoS{sub 2}@Oleylamine nanosheets as filler. The dielectric properties of the resulting comoposite have been investigated at 300K and in the frequency range between 1000 Hz and 1 MHz. The addition of the MoS{sub 2}@Oleylamine nanosheets leads to a decreasing of the relative dielectric constant and of the electrical conductivity measured in the voltage range between ±500V. Thanks to a possibility to tune the electrical permittivity with the control of MoS{sub 2} concentration, these materials could be used as a low-dielectric material in the microelectronics applications.« less

Displacement Damage Effects in Solar Cells: Mining Damage From the Microelectronics and Photonics Test Bed Space Experiment

NASA Technical Reports Server (NTRS)

Hardage, Donna (Technical Monitor); Walters, R. J.; Morton, T. L.; Messenger, S. R.

2004-01-01

The objective is to develop an improved space solar cell radiation response analysis capability and to produce a computer modeling tool which implements the analysis. This was accomplished through analysis of solar cell flight data taken on the Microelectronics and Photonics Test Bed experiment. This effort specifically addresses issues related to rapid technological change in the area of solar cells for space applications in order to enhance system performance, decrease risk, and reduce cost for future missions.

Patterning layer-by-layer self-assembled multilayer by lithography and its applications to thin film devices

NASA Astrophysics Data System (ADS)

Hua, Feng

Nanoparticles are exciting materials because they exhibit unique electronic, catalytic, and optical properties. As a novel and promising nanobuilding block, it attracts considerable research efforts in its integration into a wide variety of thin film devices. Nanoparticles were adsorbed onto the substrate with layer-by-layer self-assembly which becomes of great interest due to its suitability in colloid particle assembly. Without extremely high temperatures and sophisticated equipment, molecularly organized films in an exactly pre-designed order can grow on almost all the substrates in nature. Two approaches generating spatially separated patterns comprised of nanoparticles are demonstrated, as well as two approaches patterning more than one type of nonoparticle on a silicon wafer. The structure of the thin film patterned by these approaches are analyzed and considered suitable to the thin film device. Finally, the combination of lithography and layer-by-layer (lbl) self-assembly is utilized to realize the microelectronic device with functional nonoparticles. The lbl self-assembly is the way to coat the nonoparticles and the lighography to pattern them. Based on the coating and patterning technique, a MOS-capacitor, a MOS field-effect-transistor and magnetic thin film cantilever are fabricated.

Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers

NASA Astrophysics Data System (ADS)

Li, Shuxia; Tarr, N. Garry; Ye, Winnie N.

2018-02-01

In the absence of commercial foundry technologies offering silicon-on-insulator (SOI) photonics combined with Complementary Metal Oxide Semiconductor (CMOS) transistors, monolithic integration of conventional electronics with SOI photonics is difficult. Here we explore the implementation of lateral bipolar junction transistors (LBJTs) and Junction Field Effect Transistors (JFETs) in a commercial SOI photonics technology lacking MOS devices but offering a variety of n- and p-type ion implants intended to provide waveguide modulators and photodetectors. The fabrication makes use of the commercial Institute of Microelectronics (IME) SOI photonics technology. Based on knowledge of device doping and geometry, simple compact LBJT and JFET device models are developed. These models are then used to design basic transimpedance amplifiers integrated with optical waveguides. The devices' experimental current-voltage characteristics results are reported.

Amorphous Metal Oxide Thin Films from Aqueous Precursors: New Routes to High-kappa Dielectrics, Impact of Annealing Atmosphere Humidity, and Elucidation of Non-Uniform Composition Profiles

NASA Astrophysics Data System (ADS)

Woods, Keenan N.

Metal oxide thin films serve as critical components in many modern technologies, including microelectronic devices. Industrial state-of-the-art production utilizes vapor-phase techniques to make high-quality (dense, smooth, uniform) thin film materials. However, vapor-phase techniques require large energy inputs and expensive equipment and precursors. Solution-phase routes to metal oxides have attracted great interest as cost-effective alternatives to vapor-phase methods and also offer the potential of large-area coverage, facile control of metal composition, and low-temperature processing. Solution deposition has previously been dominated by sol-gel routes, which utilize organic ligands, additives, and/or solvents. However, sol-gel films are often porous and contain residual carbon impurities, which can negatively impact device properties. All-inorganic aqueous routes produce dense, ultrasmooth films without carbon impurities, but the mechanisms involved in converting aqueous precursors to metal oxides are virtually unexplored. Understanding these mechanisms and the parameters that influence them is critical for widespread use of aqueous approaches to prepare microelectronic components. Additionally, understanding (and controlling) density and composition inhomogeneities is important for optimizing electronic properties. An overview of deposition approaches and the challenges facing aqueous routes are presented in Chapter I. A summary of thin film characterization techniques central to this work is given in Chapter II. This dissertation contributes to the field of solution-phase deposition by focusing on three areas. First, an all-inorganic aqueous route to high-kappa metal oxide dielectrics is developed for two ternary systems. Chapters III and IV detail the film formation chemistry and film properties of lanthanum zirconium oxide (LZO) and zirconium aluminum oxide (ZAO), respectively. The functionality of these dielectrics as device components is also demonstrated. Second, the impact of steam annealing on the evolution of aqueous-derived films is reported. Chapter V demonstrates that steam annealing lowers processing temperatures by effectively reducing residual counterion content, improving film stability with respect to water absorption, and enhancing dielectric properties of LZO films. Third, density and composition inhomogeneities in aqueous-derived films are investigated. Chapters VI and VII examine density inhomogeneities in single- and multi-metal component thin films, respectively, and show that these density inhomogeneities are related to inhomogeneous metal component distributions. This dissertation includes previously published coauthored material.

Silicon Modulators, Switches and Sub-systems for Optical Interconnect

NASA Astrophysics Data System (ADS)

Li, Qi

Silicon photonics is emerging as a promising platform for manufacturing and integrating photonic devices for light generation, modulation, switching and detection. The compatibility with existing CMOS microelectronic foundries and high index contrast in silicon could enable low cost and high performance photonic systems, which find many applications in optical communication, data center networking and photonic network-on-chip. This thesis first develops and demonstrates several experimental work on high speed silicon modulators and switches with record performance and novel functionality. A 8x40 Gb/s transmitter based on silicon microrings is first presented. Then an end-to-end link using microrings for Binary Phase Shift Keying (BPSK) modulation and demodulation is shown, and its performance with conventional BPSK modulation/ demodulation techniques is compared. Next, a silicon traveling-wave Mach- Zehnder modulator is demonstrated at data rate up to 56 Gb/s for OOK modulation and 48 Gb/s for BPSK modulation, showing its capability at high speed communication systems. Then a single silicon microring is shown with 2x2 full crossbar switching functionality, enabling optical interconnects with ultra small footprint. Then several other experiments in the silicon platform are presented, including a fully integrated in-band Optical Signal to Noise Ratio (OSNR) monitor, characterization of optical power upper bound in a silicon microring modulator, and wavelength conversion in a dispersion-engineered waveguide. The last part of this thesis is on network-level application of photonics, specically a broadcast-and-select network based on star coupler is introduced, and its scalability performance is studied. Finally a novel switch architecture for data center networks is discussed, and its benefits as a disaggregated network are presented.

Nanoengineered Thermal Materials Based on Carbon Nanotube Array Composites

NASA Technical Reports Server (NTRS)

Li, Jun; Meyyappan, Meyya; Dangelo, Carols

2012-01-01

State-of-the-art integrated circuits (ICs) for microprocessors routinely dissipate power densities on the order of 50 W/cm2. This large power is due to the localized heating of ICs operating at high frequencies and must be managed for future high-frequency microelectronic applications. As the size of components and devices for ICs and other appliances becomes smaller, it becomes more difficult to provide heat dissipation and transport for such components and devices. A thermal conductor for a macro-sized thermal conductor is generally inadequate for use with a microsized component or device, in part due to scaling problems. A method has been developed for providing for thermal conduction using an array of carbon nanotubes (CNTs). An array of vertically oriented CNTs is grown on a substrate having high thermal conductivity, and interstitial regions between adjacent CNTs in the array are partly or wholly filled with a filler material having a high thermal conductivity so that at least one end of each CNT is exposed. The exposed end of each CNT is pressed against a surface of an object from which heat is to be removed. The CNT-filler-composite adjacent to the substrate provides improved mechanical strength to anchor CNTs in place, and also serves as a heat spreader to improve diffusion of heat flux from the smaller volume (CNTs) to a larger heat sink.

Anisotropy of the nitrogen conduction states in the group III nitrides studied by polarized x-ray absorption

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lawniczak-Jablonska, K.; Liliental-Weber, Z.; Gullikson, E.M.

1997-04-01

Group III nitrides (AlN, GaN, and InN) consist of the semiconductors which appear recently as a basic materials for optoelectronic devices active in the visible/ultraviolet spectrum as well as high-temperature and high-power microelectronic devices. However, understanding of the basic physical properties leading to application is still not satisfactory. One of the reasons consists in unsufficient knowledge of the band structure of the considered semiconductors. Several theoretical studies of III-nitrides band structure have been published but relatively few experimental studies have been carried out, particularly with respect to their conduction band structure. This motivated the authors to examine the conduction bandmore » structure projected onto p-states of the nitrogen atoms for AlN, GaN and InN. An additional advantage of their studies is the availability of the studied nitrides in two structures, hexagonal (wurtzite) and cubic (zincblende). This offers an opportunity to gain information about the role of the anisotropy of electronic band states in determining various physical properties.« less

Dimensional metrology of lab-on-a-chip internal structures: a comparison of optical coherence tomography with confocal fluorescence microscopy.

PubMed

Reyes, D R; Halter, M; Hwang, J

2015-07-01

The characterization of internal structures in a polymeric microfluidic device, especially of a final product, will require a different set of optical metrology tools than those traditionally used for microelectronic devices. We demonstrate that optical coherence tomography (OCT) imaging is a promising technique to characterize the internal structures of poly(methyl methacrylate) devices where the subsurface structures often cannot be imaged by conventional wide field optical microscopy. The structural details of channels in the devices were imaged with OCT and analyzed with an in-house written ImageJ macro in an effort to identify the structural details of the channel. The dimensional values obtained with OCT were compared with laser-scanning confocal microscopy images of channels filled with a fluorophore solution. Attempts were also made using confocal reflectance and interferometry microscopy to measure the channel dimensions, but artefacts present in the images precluded quantitative analysis. OCT provided the most accurate estimates for the channel height based on an analysis of optical micrographs obtained after destructively slicing the channel with a microtome. OCT may be a promising technique for the future of three-dimensional metrology of critical internal structures in lab-on-a-chip devices because scans can be performed rapidly and noninvasively prior to their use. © 2015 The Authors Journal of Microscopy © 2015 Royal Microscopical Society.

NASA Tech Briefs, October 2011

NASA Technical Reports Server (NTRS)

2011-01-01

Topics covered include: Laser Truss Sensor for Segmented Telescope Phasing; Qualifications of Bonding Process of Temperature Sensors to Deep-Space Missions; Optical Sensors for Monitoring Gamma and Neutron Radiation; Compliant Tactile Sensors; Cytometer on a Chip; Measuring Input Thresholds on an Existing Board; Scanning and Defocusing Properties of Microstrip Reflectarray Antennas; Cable Tester Box; Programmable Oscillator; Fault-Tolerant, Radiation-Hard DSP; Sub-Shot Noise Power Source for Microelectronics; Asynchronous Message Service Reference Implementation; Zero-Copy Objects System; Delay and Disruption Tolerant Networking MACHETE Model; Contact Graph Routing; Parallel Eclipse Project Checkout; Technique for Configuring an Actively Cooled Thermal Shield in a Flight System; Use of Additives to Improve Performance of Methyl Butyrate-Based Lithium-Ion Electrolytes; Li-Ion Cells Employing Electrolytes with Methyl Propionate and Ethyl Butyrate Co-Solvents; Improved Devices for Collecting Sweat for Chemical Analysis; Tissue Photolithography; Method for Impeding Degradation of Porous Silicon Structures; External Cooling Coupled to Reduced Extremity Pressure Device; A Zero-Gravity Cup for Drinking Beverages in Microgravity; Co-Flow Hollow Cathode Technology; Programmable Aperture with MEMS Microshutter Arrays; Polished Panel Optical Receiver for Simultaneous RF/Optical Telemetry with Large DSN Antennas; Adaptive System Modeling for Spacecraft Simulation; Lidar-Based Navigation Algorithm for Safe Lunar Landing; Tracking Object Existence From an Autonomous Patrol Vehicle; Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications; and Architecture for a 1-GHz Digital RADAR.

Solid State Research.

DTIC Science & Technology

1982-11-22

48 Fabricated in Zone-Melting-Recrystallized Si Films on Si0 2-Coated Si Substrates V 4. MICROELECTRONICS 55 4.1 Charge-Coupled Devices: Time...OMCVD to the CLEFT (cleavage of lateral epitaxial films for transfer) process, a continuous epitaxial GaAs layer 3 Ym thick has been grown over a...complete-island-etch or local-oxidation-of-Si isolation, that were fabricated in zone-melting-recrystallized Si films on Si02-coated Si substrates. As

Ultra-Low-Cost Room Temperature SiC Thin Films

NASA Technical Reports Server (NTRS)

Faur, Maria

1997-01-01

The research group at CSU has conducted theoretical and experimental research on 'Ultra-Low-Cost Room Temperature SiC Thin Films. The effectiveness of a ultra-low-cost room temperature thin film SiC growth technique on Silicon and Germanium substrates and structures with applications to space solar sells, ThermoPhotoVoltaic (TPV) cells and microelectronic and optoelectronic devices was investigated and the main result of this effort are summarized.

Critical issues regarding SEU in avionics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Normand, E.; McNulty, P.J.

1993-01-01

The energetic neutrons in the atmosphere cause microelectronics in avionic system to malfunction through a mechanism called single-event upsets (SEUs), and single-event latchup is a potential threat. Data from military and experimental flights as well as laboratory testing indicate that typical non-radiation-hardened 64K and 256K static random access memories (SRAMs) can experience a significant SEU rate at aircraft altitudes. Microelectronics in avionics systems have been demonstrated to be susceptible to SEU. Of all device types, RAMs are the most sensitive because they have the largest number of bits on a chip (e.g., an SRAM may have from 64K to 1Mmore » bits, a microprocessor 3K to 10K bits, and a logic device like an analog-to-digital converter, 12 bits). Avionics designers will need to take this susceptibility into account in current and future designs. A number of techniques are available for dealing with SEU: EDAC, redundancy, use of SEU-hard parts, reset and/or watchdog timer capability, etc. Specifications should be developed to guide avionics vendors in the analysis, prevention, and verification of neutron-induced SEU. Areas for additional research include better definition of the atmospheric neutrons and protons, development of better calculational models (e.g., those used for protons[sup 11]), and better characterization of neutron-induced latchup.« less

Enabling laser applications in microelectronics manufacturing

NASA Astrophysics Data System (ADS)

Delmdahl, Ralph; Brune, Jan; Fechner, Burkhard; Senczuk, Rolf

2016-02-01

In this experimental study, we report on high-pulse-energy excimer laser drilling into high-performance build-up films which are pivotal in microelectronics manufacturing. Build-up materials ABF-GX13 from Ajinomoto as well as ZS-100 from Zeon Corporation are evaluated with respect to their viability for economic excimer laser-based micro-via formation. Excimer laser mask imaging projection at laser wavelengths of 193, 248 and 308 nm is employed to generate matrices of smaller micro-vias with different diameters and via pitches. High drilling quality is achievable for all excimer laser wavelengths with the fastest ablation rates measured in the case of 248 and 308 nm wavelengths. The presence of glass fillers in build-up films as in the ABF-GX13 material poses some limitations to the minimum achievable via diameter. However, surprisingly good drilling results are obtainable as long as the filler dimensions are well below the diameter of the micro-vias. Sidewall angles of vias are controllable by adjusting the laser energy density and pulse number. In this work, the structuring capabilities of excimer lasers in build-up films as to taper angle variations, attainable via diameters, edge-stop behavior and ablation rates will be elucidated.

A novel micromixer based on the alternating current-flow field effect transistor.

PubMed

Wu, Yupan; Ren, Yukun; Tao, Ye; Hou, Likai; Hu, Qingming; Jiang, Hongyuan

2016-12-20

Induced-charge electroosmosis (ICEO) phenomena have been attracting considerable attention as a means for pumping and mixing in microfluidic systems with the advantage of simple structures and low-energy consumption. We propose the first effort to exploit a fixed-potential ICEO flow around a floating electrode for microfluidic mixing. In analogy with the field effect transistor (FET) in microelectronics, the floating electrode act as a "gate" electrode for generating asymmetric ICEO flow and thus the device is called an AC-flow FET (AC-FFET). We take advantage of a tandem electrode configuration containing two biased center metal strips arranged in sequence at the bottom of the channel to generate asymmetric vortexes. The current device is manufactured on low-cost glass substrates via an easy and reliable process. Mixing experiments were conducted in the proposed device and the comparison between simulation and experimental results was also carried out, which indicates that the micromixer permits an efficient mixing effect. The mixing performance can be further enhanced by the application of a suitable phase difference between the driving electrode and the gate electrode or a square wave signal. Finally, we performed a critical analysis of the proposed micromixer in comparison with different mixer designs using a comparative mixing index (CMI). The novel methods put forward here offer a simple solution to mixing issues in microfluidic systems.

Fabrication and Doping Methods for Silicon Nano- and Micropillar Arrays for Solar-Cell Applications: A Review.

PubMed

Elbersen, Rick; Vijselaar, Wouter; Tiggelaar, Roald M; Gardeniers, Han; Huskens, Jurriaan

2015-11-18

Silicon is one of the main components of commercial solar cells and is used in many other solar-light-harvesting devices. The overall efficiency of these devices can be increased by the use of structured surfaces that contain nanometer- to micrometer-sized pillars with radial p/n junctions. High densities of such structures greatly enhance the light-absorbing properties of the device, whereas the 3D p/n junction geometry shortens the diffusion length of minority carriers and diminishes recombination. Due to the vast silicon nano- and microfabrication toolbox that exists nowadays, many versatile methods for the preparation of such highly structured samples are available. Furthermore, the formation of p/n junctions on structured surfaces is possible by a variety of doping techniques, in large part transferred from microelectronic circuit technology. The right choice of doping method, to achieve good control of junction depth and doping level, can contribute to an improvement of the overall efficiency that can be obtained in devices for energy applications. A review of the state-of-the-art of the fabrication and doping of silicon micro and nanopillars is presented here, as well as of the analysis of the properties and geometry of thus-formed 3D-structured p/n junctions. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Reproductive Hazards Still Persist in the Microelectronics Industry: Increased Risk of Spontaneous Abortion and Menstrual Aberration among Female Workers in the Microelectronics Industry in South Korea

PubMed Central

Kim, Inah; Kim, Myoung-Hee; Lim, Sinye

2015-01-01

Objectives Despite the global expansion of supply chains and changes to the production process, few studies since the mid-1990s and 2000s have examined reproductive risks of the microelectronics industry; we examined the reproductive risks among female microelectronics workers in South Korea. Methods Based on claim data from the National Health Insurance (2008–2012), we estimated age-specific rates of spontaneous abortion (SAB) and menstrual aberration (MA) among women aged 20 to 39 years. We compared data between microelectronics workers and three different control groups: economically inactive women, the working population as a whole, and workers employed in the bank industry. For an effect measure, age-stratified relative risks (RRs) were estimated. Results Female workers in the microelectronics industry showed significantly higher risk for SAB and MA compared to control groups. The RRs for SAB with reference to economically inactive women, working population, and bank workers in their twenties were 1.57, 1.40, and 1.37, respectively, and the RRs for MA among females in their twenties were 1.54, 1.38, and 1.48, respectively. For women in their thirties, RRs for SAB were 1.58, 1.67, and 1.13, and those for MA were 1.25, 1.35, and 1.23 compared to the three control populations, respectively. All RRs were statistically significant at a level of 0.05, except for the SAB case comparison with bank workers in their thirties. Conclusions Despite technical innovations and health and safety measures, female workers in microelectronics industry in South Korea have high rates of SAB and MA, suggesting continued exposure to reproductive hazards. Further etiologic studies based on primary data collection and careful surveillance are required to confirm these results. PMID:25938673

Effect of an Interfacial Layer on Electron Tunneling through Atomically Thin Al2O3 Tunnel Barriers.

PubMed

Wilt, Jamie; Sakidja, Ridwan; Goul, Ryan; Wu, Judy Z

2017-10-25

Electron tunneling through high-quality, atomically thin dielectric films can provide a critical enabling technology for future microelectronics, bringing enhanced quantum coherent transport, fast speed, small size, and high energy efficiency. A fundamental challenge is in controlling the interface between the dielectric and device electrodes. An interfacial layer (IL) will contain defects and introduce defects in the dielectric film grown atop, preventing electron tunneling through the formation of shorts. In this work, we present the first systematic investigation of the IL in Al 2 O 3 dielectric films of 1-6 Å's in thickness on an Al electrode. We integrated several advanced approaches: molecular dynamics to simulate IL formation, in situ high vacuum sputtering atomic layer deposition (ALD) to synthesize Al 2 O 3 on Al films, and in situ ultrahigh vacuum scanning tunneling spectroscopy to probe the electron tunneling through the Al 2 O 3 . The IL had a profound effect on electron tunneling. We observed a reduced tunnel barrier height and soft-type dielectric breakdown which indicate that defects are present in both the IL and in the Al 2 O 3 . The IL forms primarily due to exposure of the Al to trace O 2 and/or H 2 O during the pre-ALD heating step of fabrication. As the IL was systematically reduced, by controlling the pre-ALD sample heating, we observed an increase of the ALD Al 2 O 3 barrier height from 0.9 to 1.5 eV along with a transition from soft to hard dielectric breakdown. This work represents a key step toward the realization of high-quality, atomically thin dielectrics with electron tunneling for the next generation of microelectronics.

High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

PubMed Central

Lin, Yen‐Hung; Faber, Hendrik; Labram, John G.; Stratakis, Emmanuel; Sygellou, Labrini; Kymakis, Emmanuel; Hastas, Nikolaos A.; Li, Ruipeng; Zhao, Kui; Amassian, Aram; Treat, Neil D.; McLachlan, Martyn

2015-01-01

High mobility thin‐film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin‐film transistors is reported that exploits the enhanced electron transport properties of low‐dimensional polycrystalline heterojunctions and quasi‐superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band‐like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature‐dependent electron transport and capacitance‐voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas‐like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll‐to‐roll, etc.) and can be seen as an extremely promising technology for application in next‐generation large area optoelectronics such as ultrahigh definition optical displays and large‐area microelectronics where high performance is a key requirement. PMID:27660741

Book of Knowledge (BOK) for NASA Electronic Packaging Roadmap

NASA Technical Reports Server (NTRS)

Ghaffarian, Reza

2015-01-01

The objective of this document is to update the NASA roadmap on packaging technologies (initially released in 2007) and to present the current trends toward further reducing size and increasing functionality. Due to the breadth of work being performed in the area of microelectronics packaging, this report presents only a number of key packaging technologies detailed in three industry roadmaps for conventional microelectronics and a more recently introduced roadmap for organic and printed electronics applications. The topics for each category were down-selected by reviewing the 2012 reports of the International Technology Roadmap for Semiconductor (ITRS), the 2013 roadmap reports of the International Electronics Manufacturing Initiative (iNEMI), the 2013 roadmap of association connecting electronics industry (IPC), the Organic Printed Electronics Association (OE-A). The report also summarizes the results of numerous articles and websites specifically discussing the trends in microelectronics packaging technologies.

Nanostructured porous graphene and its composites for energy storage applications

NASA Astrophysics Data System (ADS)

Ramos Ferrer, Pablo; Mace, Annsley; Thomas, Samantha N.; Jeon, Ju-Won

2017-10-01

Graphene, 2D atomic-layer of sp2 carbon, has attracted a great deal of interest for use in solar cells, LEDs, electronic skin, touchscreens, energy storage devices, and microelectronics. This is due to excellent properties of graphene, such as a high theoretical surface area, electrical conductivity, and mechanical strength. The fundamental structure of graphene is also manipulatable, allowing for the formation of an even more extraordinary material, porous graphene. Porous graphene structures can be categorized as microporous, mesoporous, or macroporous depending on the pore size, all with their own unique advantages. These characteristics of graphene, which are further explained in this paper, may be the key to greatly improving a wide range of applications in energy storage systems.

Nanostructured porous graphene and its composites for energy storage applications.

PubMed

Ramos Ferrer, Pablo; Mace, Annsley; Thomas, Samantha N; Jeon, Ju-Won

2017-01-01

Graphene, 2D atomic-layer of sp 2 carbon, has attracted a great deal of interest for use in solar cells, LEDs, electronic skin, touchscreens, energy storage devices, and microelectronics. This is due to excellent properties of graphene, such as a high theoretical surface area, electrical conductivity, and mechanical strength. The fundamental structure of graphene is also manipulatable, allowing for the formation of an even more extraordinary material, porous graphene. Porous graphene structures can be categorized as microporous, mesoporous, or macroporous depending on the pore size, all with their own unique advantages. These characteristics of graphene, which are further explained in this paper, may be the key to greatly improving a wide range of applications in energy storage systems.

1988 IEEE Aerospace Applications Conference, Park City, UT, Feb. 7-12, 1988, Digest

NASA Astrophysics Data System (ADS)

The conference presents papers on microwave applications, data and signal processing applications, related aerospace applications, and advanced microelectronic products for the aerospace industry. Topics include a high-performance antenna measurement system, microwave power beaming from earth to space, the digital enhancement of microwave component performance, and a GaAs vector processor based on parallel RISC microprocessors. Consideration is also given to unique techniques for reliable SBNR architectures, a linear analysis subsystem for CSSL-IV, and a structured singular value approach to missile autopilot analysis.

Pre-release plastic packaging of MEMS and IMEMS devices

DOEpatents

Peterson, Kenneth A.; Conley, William R.

2002-01-01

A method is disclosed for pre-release plastic packaging of MEMS and IMEMS devices. The method can include encapsulating the MEMS device in a transfer molded plastic package. Next, a perforation can be made in the package to provide access to the MEMS elements. The non-ablative material removal process can include wet etching, dry etching, mechanical machining, water jet cutting, and ultrasonic machining, or any combination thereof. Finally, the MEMS elements can be released by using either a wet etching or dry plasma etching process. The MEMS elements can be protected with a parylene protective coating. After releasing the MEMS elements, an anti-stiction coating can be applied. The perforating step can be applied to both sides of the device or package. A cover lid can be attached to the face of the package after releasing any MEMS elements. The cover lid can include a window for providing optical access. The method can be applied to any plastic packaged microelectronic device that requires access to the environment, including chemical, pressure, or temperature-sensitive microsensors; CCD chips, photocells, laser diodes, VCSEL's, and UV-EPROMS. The present method places the high-risk packaging steps ahead of the release of the fragile portions of the device. It also provides protection for the die in shipment between the molding house and the house that will release the MEMS elements and subsequently treat the surfaces.

Space, Atmospheric, and Terrestrial Radiation Environments

NASA Technical Reports Server (NTRS)

Barth, Janet L.; Dyer, C. S.; Stassinopoulos, E. G.

2003-01-01

The progress on developing models of the radiation environment since the 1960s is reviewed with emphasis on models that can be applied to predicting the performance of microelectronics used in spacecraft and instruments. Space, atmospheric, and ground environments are included. It is shown that models must be adapted continually to account for increased understanding of the dynamics of the radiation environment and the changes in microelectronics technology. The IEEE Nuclear and Space Radiation Effects Conference is a vital forum to report model progress to the radiation effects research community.

Laser-directed 3D assembly of carbon nanotubes using two-photon polymerization (Conference Presentation)

NASA Astrophysics Data System (ADS)

Liu, Ying; Xiong, Wei; Jiang, Li Jia; Zhou, Yunshen; Li, Dawei; Jiang, Lan; Silvain, Jean-Francois; Lu, Yongfeng

2017-02-01

Precise assembly of carbon nanotubes (CNTs) in arbitrary 3D space with proper alignment is critically important and desirable for CNT applications but still remains as a long-standing challenge. Using the two-photon polymerization (TPP) technique, it is possible to fabricate 3D micro/nanoscale CNT/polymer architectures with proper CNT alignments in desired directions, which is expected to enable a broad range of applications of CNTs in functional devices. To unleash the full potential of CNTs, it is strategically important to develop TPP-compatible resins with high CNT concentrations for precise assembly of CNTs into 3D micro/nanostructures for functional device applications. We investigated a thiol grafting method in functionalizing multiwalled carbon nanotubes (MWNTs) to develop TPP-compatible MWNT-thiol-acrylate (MTA) composite resins. The composite resins developed had high MWNT concentrations up to 0.2 wt%, over one order of magnitude higher than previously published work. Significantly enhanced electrical and mechanical properties of the 3D micro/nanostructures were achieved. Precisely controlled MWNT assembly and strong anisotropic effects were confirmed. Microelectronic devices made of the MTA composite polymer were demonstrated. The nanofabrication method can achieve controlled assembly of MWNTs in 3D micro/nanostructures, enabling a broad range of CNT applications, including 3D electronics, integrated photonics, and micro/nanoelectromechanical systems (MEMS/NEMS).

Ring modulators with enhanced efficiency based on standing-wave operation on a field-matched, interdigitated p-n junction.

PubMed

Pavanello, Fabio; Zeng, Xiaoge; Wade, Mark T; Popović, Miloš A

2016-11-28

We propose ring modulators based on interdigitated p-n junctions that exploit standing rather than traveling-wave resonant modes to improve modulation efficiency, insertion loss and speed. Matching the longitudinal nodes and antinodes of a standing-wave mode with high (contacts) and low (depletion regions) carrier density regions, respectively, simultaneously lowers loss and increases sensitivity significantly. This approach permits further to relax optical constraints on contacts placement and can lead to lower device capacitance. Such structures are well-matched to fabrication in advanced microelectronics CMOS processes. Device architectures that exploit this concept are presented along with their benefits and drawbacks. A temporal coupled mode theory model is used to investigate the static and dynamic response. We show that modulation efficiencies or loss Q factors up to 2 times higher than in previous traveling-wave geometries can be achieved leading to much larger extinction ratios. Finally, we discuss more complex doping geometries that can improve carrier dynamics for higher modulation speeds in this context.

Reactive ion etching of indium-tin oxide films by CCl4-based Inductivity Coupled Plasma

NASA Astrophysics Data System (ADS)

Juneja, Sucheta; Poletayev, Sergey D.; Fomchenkov, Sergey; Khonina, Svetlana N.; Skidanov, Roman V.; Kazanskiy, Nikolay L.

2016-08-01

Indium tin oxide (ITO) films have been a subject of extensive studies in fabrication of micro-electronic devices for opto-electronic applications ranging from anti-reflection coatings to transparent contacts in photovoltaic devices. In this paper, a new and effective way of reactive ion etching of a conducting indium-tin oxide (ITO) film with Carbon tetrachloride (CCl4) has been investigated. CCl4 plasma containing an addition of gases mixture of dissociated argon and oxygen were used. Oxygen is added to increase the etchant percentage whereas argon was used for stabilization of plasma. The etching characteristics obtained with these gaseous mixtures were explained based on plasma etch chemistry and etching regime of ITO films. An etch rate as high as ∼20 nm/min can be achieved with a controlled process parameter such as power density, total flow rate, composition of reactive gases gas and pressure. Our Investigation represents some of the extensive work in this area.

Configurations of high-frequency ultrasonics complex vibration systems for packaging in microelectronics.

PubMed

Tsujino, Jiromaru; Harada, Yoshiki; Ihara, Shigeru; Kasahara, Kohei; Shimizu, Masanori; Ueoka, Tetsugi

2004-04-01

Ultrasonic high-frequency complex vibrations are effective for various ultrasonic high-power applications. Three types of ultrasonic complex vibration system with a welding tip vibrating elliptical to circular locus for packaging in microelectronics were studied. The complex vibration sources are using (1) a longitudinal-torsional vibration converter with diagonal slits that is driven only by a longitudinal vibration source, (2) a complex transverse vibration rod with several stepped parts that is driven by two longitudinal vibration source crossed at a right angle and (3) a longitudinal vibration circular disk and three longitudinal transducers that are installed at the circumference of the disk.

Effect of filling ratio and orientation on the thermal performance of closed loop pulsating heat pipe using ethanol

NASA Astrophysics Data System (ADS)

Rahman, Md. Lutfor; Chowdhury, Mehrin; Islam, Nawshad Arslan; Mufti, Sayed Muhammad; Ali, Mohammad

2016-07-01

Pulsating heat pipe (PHP) is a new, promising yet ambiguous technology for effective heat transfer of microelectronic devices where heat is carried by the vapor plugs and liquid slugs of the working fluid. The aim of this research paper is to better understand the operation of PHP through experimental investigations and obtain comparative results for different parameters. A series of experiments are conducted on a closed loop PHP (CLPHP) with 8 loops made of copper capillary tube of 2 mm inner diameter. Ethanol is taken as the working fluid. The operating characteristics are studied for the variation of heat input, filling ratio (FR) and orientation. The filling ratios are 40%, 50%, 60% and 70% based on its total volume. The orientations are 0° (vertical), 30°, 45° and 60°. The results clearly demonstrate the effect of filling ratio and inclination angle on the performance, operational stability and heat transfer capability of ethanol as working fluid of CLPHP. Important insight of the operational characteristics of CLPHP is obtained and optimum performance of CLPHP using ethanol is thus identified. Ethanol works best at 50-60%FR at wide range of heat inputs. At very low heat inputs, 40%FR can be used for attaining a good performance. Filling ratio below 40%FR is not suitable for using in CLPHP as it gives a low performance. The optimum performance of the device can be obtained at vertical position.

Liquid-Phase Laser Induced Forward Transfer for Complex Organic Inks and Tissue Engineering.

PubMed

Nguyen, Alexander K; Narayan, Roger J

2017-01-01

Laser induced forward transfer (LIFT) acts as a novel alternative to incumbent plotting techniques such as inkjet printing due to its ability to precisely deposit and position picoliter-sized droplets while being gentle enough to preserve sensitive structures within the ink. Materials as simple as screen printing ink to complex eukaryotic cells have been printed with applications spanning from microelectronics to tissue engineering. Biotechnology can benefit from this technique due to the efficient use of low volumes of reagent and the compatibility with a wide range of rheological properties. In addition, LIFT can be performed in a simple lab environment, not requiring vacuum or other extreme conditions. Although the basic apparatus is simple, many strategies exist to optimize the performance considering the ink and the desired pattern. The basic mechanism is similar between studies so the large number of variants can be summarized into a couple of categories and reported on with respect to their specific applications. In particular, precise and gentle deposition of complex molecules and eukaryotic cells represent the unique abilities of this technology. LIFT has demonstrated not only marked improvements in the quality of sensors and related medical devices over those manufactured with incumbent technologies but also great applicability in tissue engineering due to the high viability of printed cells.

Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection

PubMed Central

Kundu, Souvik; Clavel, Michael; Biswas, Pranab; Chen, Bo; Song, Hyun-Cheol; Kumar, Prashant; Halder, Nripendra N.; Hudait, Mantu K.; Banerji, Pallab; Sanghadasa, Mohan; Priya, Shashank

2015-01-01

We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO3 (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal the repeatable polarization inversion by poling, manifesting its potential for read-write operation in NVM devices. The electroforming-free and ferroelectric polarization coupled electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic endurance, and low set/reset voltages. X-ray photoelectron spectroscopy was utilized to determine the band alignment at the BT-BFO and Nb:STO heterojunction, and it exhibited staggered band alignment. This heterojunction is found to behave as an efficient ultraviolet photo-detector with low rise and fall time. The architecture also demonstrates half-wave rectification under low and high input signal frequencies, where the output distortion is minimal. The results provide avenue for an electrical switch that can regulate the pixels in low or high frequency images. Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials. PMID:26202946

Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection.

PubMed

Kundu, Souvik; Clavel, Michael; Biswas, Pranab; Chen, Bo; Song, Hyun-Cheol; Kumar, Prashant; Halder, Nripendra N; Hudait, Mantu K; Banerji, Pallab; Sanghadasa, Mohan; Priya, Shashank

2015-07-23

We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO3 (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal the repeatable polarization inversion by poling, manifesting its potential for read-write operation in NVM devices. The electroforming-free and ferroelectric polarization coupled electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic endurance, and low set/reset voltages. X-ray photoelectron spectroscopy was utilized to determine the band alignment at the BT-BFO and Nb:STO heterojunction, and it exhibited staggered band alignment. This heterojunction is found to behave as an efficient ultraviolet photo-detector with low rise and fall time. The architecture also demonstrates half-wave rectification under low and high input signal frequencies, where the output distortion is minimal. The results provide avenue for an electrical switch that can regulate the pixels in low or high frequency images. Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials.

n-Type diamond and method for producing same

DOEpatents

Anderson, Richard J.

2002-01-01

A new n-type semiconducting diamond is disclosed, which is doped with n-type dopant atoms. Such diamond is advantageously formed by chemical vapor deposition from a source gas mixture comprising a carbon source compound for the diamond, and a volatile hot wire filament for the n-type impurity species, so that the n-type impurity atoms are doped in the diamond during its formation. A corresponding chemical vapor deposition method of forming the n-type semiconducting diamond is disclosed. The n-type semiconducting diamond of the invention may be usefully employed in the formation of diamond-based transistor devices comprising pn diamond junctions, and in other microelectronic device applications.

New precursors and chemistry for the growth of transition metal films by atomic layer deposition

NASA Astrophysics Data System (ADS)

Knisley, Thomas Joseph

The advancing complexity of advanced microelectronic devices is placing rigorous demands on currently used PVD and CVD deposition techniques. The ALD deposition method is proposed to meet the film thickness and conformality constraints needed by the semiconductor industry in future manufacturing processes. Unfortunately, there is a limited number of chemical precursors available that have high thermal stability, reactivity, and vapor pressure suitable for ALD film growth to occur. These properties collectively contribute to the lack of suitable transition metal precursors available for use in ALD. In this thesis, we report the discovery of a series of novel transition metal diazadienate precursors that promising properties deemed suitable for ALD. The volatility and thermal stability of the new transition metal diazadienyl compounds were studied by preparative sublimation and capillary tube melting point/decomposition experiments. Thermogravimetric analyses (TGA) demonstrate precursor residues of less than 4% at 500 °C. In addition, sublimation data, melting points, and decomposition temperatures for all complexes are presented. The manganese diazadienyl complex has the highest decomposition temperature of the series of complexes produced (325 °C). During preparative sublimations, the product recoveries of all transition metal diazadienyl complexes were greater than 92.0% with nonvolatile residues of less than 7.0%. This is an excellent indication that these complexes may be suitable candidates as metal precursors for ALD. Nickel nitride (NixN) films have been studied as an intermediate material for the formation of both nickel metal and nickel silicide using chemical vapor deposition. Herein, we describe the ALD growth of nickel nitride thin films from bis(1,4-di-tert-butyl-1,3-diazabutadiene) nickel(II) (Ni(tBu2DAD)2) and 1,1-dimethylhydrazine. An ALD window for the deposition of nickel nitride films on 500 nm thermal SiO2 substrates was observed between 225 and 240 °C with a constant growth rate of 0.70 Å/cycle. X-Ray photoelectron spectroscopy (XPS) showed all expected ionizations with carbon concentrations below the detection limit after argon ion sputtering. Due to preferential nitrogen sputtering in XPS, Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA) were performed and subsequently revealed Ni:N ratios between 2-4 for films deposited within the ALD window. AFM measurements revealed a RMS roughness value of 10.8 nm on an as-deposited film at 225°C. All as-deposited films were amorphous as determined by X-ray diffraction. Copper is the primary interconnect material in microelectronics devices, due to its high conductivity and low affinity towards electromigration. With transistor gate lengths scheduled to reach 14 nm by 2014, there are severe demands upon the current film growth techniques used in device fabrication. The ALD film growth method is ideally suited for future microelectronics manufacturing, since it inherently provides highly conformal thin films, even in high aspect ratio nanoscale features, and allows sub-nanometer control over film thicknesses. In Chapter 4, we describe the atomic layer deposition of high purity, low resistivity copper metal thin films using a three precursor sequence entailing Cu(dmap)2, formic acid, and hydrazine. In this process, Cu(dmap) 2 is unreactive towards hydrazine but is transformed to copper(II) formate, which is then readily reduced to copper metal by subsequent hydrazine exposure. The present work therefore addresses a central problem with the ALD growth of metal thin films: low reactivity of metal precursors toward common reducing agents. A constant growth rate of 0.47-0.50 Å/cycle upon prime grade Si(100) was observed at substrate temperatures between 100 and 170 °C. Compositional analyses (XPS and TOF-ERDA) revealed copper films with low levels of carbon, oxygen, nitrogen, and hydrogen. Powder X-ray diffraction spectra of all films showed polycrystalline copper. The resistivities of films grown between 100 and 140 °C ranged between 9.6 and 16.4 μΩ·cm, demonstrating the growth of high purity, low resistivity copper films. An AFM measurement revealed a RMS roughness value of 3.5 nm on an as-deposited 50 nm Cu film at 120 °C.

Thermal shock testing for assuring reliability of glass-sealed microelectronic packages

NASA Technical Reports Server (NTRS)

Thomas, Walter B., III; Lewis, Michael D.

1991-01-01

Tests were performed to determine if thermal shocking is destructive to glass-to-metal seal microelectronic packages and if thermal shock step stressing can compare package reliabilities. Thermal shocking was shown to be not destructive to highly reliable glass seals. Pin-pull tests used to compare the interfacial pin glass strengths showed no differences between thermal shocked and not-thermal shocked headers. A 'critical stress resistance temperature' was not exhibited by the 14 pin Dual In-line Package (DIP) headers evaluated. Headers manufactured in cryogenic nitrogen based and exothermically generated atmospheres showed differences in as-received leak rates, residual oxide depths and pin glass interfacial strengths; these were caused by the different manufacturing methods, in particular, by the chemically etched pins used by one manufacturer. Both header types passed thermal shock tests to temperature differentials of 646 C. The sensitivity of helium leak rate measurements was improved up to 70 percent by baking headers for two hours at 200 C after thermal shocking.

Three-dimensional polymer MEMS with functionalized carbon nanotubes by microstereolithography

NASA Astrophysics Data System (ADS)

Varadan, Vijay K.; Xie, Jining

2003-04-01

Microfabrication techniques such as bulk micromachining and surface micromachining currently employed to conceive MEMS are largely derived from the standard IC and microelectronics technology. Even though many MEMS devices with integrated electronics have been achieved by using the traditional micromachining techniques, some limitations have nevertheless to be underlined: 1) these techniques are very expensive and need specific installations as well as a cleanroom environment, 2) the materials that can be used up to now are restricted to silicon and metals, 3) the manufacture of 3D parts having curved surfaces or an important number of layers is not possible. Moreover, for some biological applications, the materials used for sensors must be compatible with human body and the actuators need to have high strain and displacement which the current silicon based MEMS do not provide. It is thus natural for the researchers to look for alternative methods such as Microstereolithography (MSL) to make 3D sensors and actuators using polymeric based materials. For MSL techniques to be successful as their silicon counterparts, one has to come up with multifunctional polymers with electrical properties comparable to silicon. These multifunctional polymers should not only have a high sensing capability but also a high strain and actuation performance. A novel UV-curable polymer uniformly bonded with functionalised nanotubes was synthesized via a modified three-step in-situ polymerization. Purified multi-walled nanotubes, gained from the microwave chemical vapor deposition method, were functionalised by oxidation. The UV curable polymer was prepared from toluene diisocyantae (TDI), functionalised nanotubes, and 2-hydroxyethyl methacrylate (HEMA). The chemical bonds between -NCO groups of TDI and -OH, -COOH groups of functionalised nanotubes help for conceiving polymeric based MEMS devices. A cost effective fabrication techniques was presented using Micro Stereo Lithography and an example of a micropump was also described. The wireless concept of the device has many applications including implanted medical delivery systems, chemical and biological instruments, fluid delivery in engines, pump coolants and refrigerants for local cooling of electronic components.

Three-dimensional polymer MEMS with functionalized carbon nanotubes by microstereolithography

NASA Astrophysics Data System (ADS)

Varadan, Vijay K.; Xie, Jining

2002-11-01

Microfabrication techniques such as bulk micromachining and surface micromachining currently employed to conceive MEMS are largely derived from the standard IC and microelectronics technology. Even though many MEMS devices with integrated electronics have been achieved by using the traditional micromachining techniques, some limitations have nevertheless to be underlined: 1) these techniques are very expensive and need specific installations as well as a cleanroom environment, 2) the materials that can be used up to now are restricted to silicon and metals, 3) the manufacture of 3D parts having curved surfaces or an important numberof layers is not possible. Moreover, for some biological applications, the materials used for sensors must be compatible with human body and the actuators need to have high strain and displacement which the current silicon based MEMS do not provide. It is thus natural for the researchers to 'look' for alternative methods such as Microstereolithography (MSL) to make 3D sensors and actuators using polymeric based materials. For MSL techniques to be successful as their silicon counterparts, one has to come up with multifunctional polyers with electrical properties comparable to silicon. These multifunctional polymers should not only have a high sensing capability but also a high strain and actuation performance. A novel UV-curable polymer uniformly bonded with functionalized nanotubes was synthesized via a modified three-step in-sity polumerization. Purified multi-walled nanotubes, gained from the microwave chemical vapor deposition method, were functionalized by oxidation. The UV curable polymer was prepared from toluene diisocyanate (TDI), functionalized nanotubes, and 2-hydroxyethyl methacrylate (HEMA). The chemical bonds between -NCO groups of TDI and -OH, -COOH groups of functionalized nanotubes help for conceiving polymeric based MEMS devices. A cost effective fabrication techniques was presented using Micro Stereo Lithography and an example of a micropump was also described. The wireless concept of the device has many applications including implanted medical delivery systems, chemical and biological instruments, fluid delivery engines, pump coolants and refrigerants for local cooling of electronic components.

Three-dimensional polymer MEMS with functionalized carbon nanotubes by microstereolithography

NASA Astrophysics Data System (ADS)

Varadan, Vijay K.; Xie, Jining

2003-01-01

Microfabrication techniques such as bulk micromachining and surface micromachining currently employed to conceive MEMS are largely derived from the standard IC and microelectronics technology. Even though many MEMS devices with integrated electronics have been achieved by using the traditional micromachining techniques, some limitations have nevertheless to be underlined: 1) these techniques are very expensive and need specific installations as well as a cleanroom environment, 2) the materials that can be used up to now are restricted to silicon and metals, 3) the manufacture of 3D parts having curved surfaces or an important number of layers is not possible. Moreover, for some biological applications, the materials used for sensors must be compatible with human body and the actuators need to have high strain and displacement which the current silicon based MEMS do not provide. It is thus natural for the researchers to look for alternative methods such as Microstereolithography (MSL) to make 3D sensors and actuators using polymeric based materials. For MSL techniques to be successful as their silicon counterparts, one has to come up with multifunctional polymers with electrical properties comparable to silicon. These multifunctional polymers should not only have a high sensing capability but also a high strain and actuation performance. A novel UV-curable polymer uniformly bonded with functionalized nanotubes was synthesized via a modified three-step in-situ polymerization. Purified multi-walled nanotubes, gained from the microwave chemical vapor deposition method, were functionalized by oxidation. The UV curable polymer was prepared from toluene diisocyanate (TDI), functionalized nanotubes, and 2 hydroxyethyl methacrylate (HEMA). The chemical bonds between NCO groups of TDI and OH, COOH groups of functionalized nanotubes help for conceiving polymeric based MEMS devices. A cost effective fabrication techniques was presented using Micro Stereo Lithography and an example of a micropump was also described. The wireless concept of the device has many applications including implanted medical delivery systems, chemical and biological instruments, fluid delivery in engines, pump coolants and refrigerants for local cooling of electronic components.

Microstereolithography for polymer-based based MEMS

NASA Astrophysics Data System (ADS)

Varadan, Vijay K.; Xie, Jining

2003-07-01

Microfabrication techniques such as bulk micromachining and surface micromachining currently employed to conceive MEMS are largely derived from the standard IC and microelectronics technology. Even though many MEMS devices with integrated electronics have been achieved by using the traditional micromachining techniques, some limitations have nevertheless to be underlined: 1) these techniques are very expensive and need specific installations as well as a cleanroom environment, 2) the materials that can be used up to now are restricted to silicon and metals, 3) the manufacture of 3D parts having curved surfaces or an important number of layers is not possible. Moreover, for some biological applications, the materials used for sensors must be compatible with human body and the actuators need to have high strain and displacement which the current silicon based MEMS do not provide. It is thus natural for the researchers to 'look' for alternative methods such as Microstereolithography (MSL) to make 3D sensors and actuators using polymeric based materials. For MSL techniques to be successful as their silicon counterparts, one has to come up with multifunctional polymers with electrical properties comparable to silicon. These multifunctional polymers should not only have a high sensing capability but also a high strain and actuation performance. A novel UV-curable polymer uniformly bonded with functionalized nanotubes was synthesized via a modified three-step in-situ polymerization. Purified multi-walled nanotubes, gained from the microwave chemical vapor deposition method, were functionalized by oxidation. The UV curable polymer was prepared from toluene diisocyanate (TDI), functionalized nanotubes, and 2-hydroxyethyl methacrylate (HEMA). The chemical bonds between -NCO groups of TDI and -OH, -COOH groups of functionalized nanotubes help for conceiving polymeric based MEMS devices. A cost effective fabrication techniques was presented using Micro Stereo Lithography and an example of a micropump was also described. The wireless concept of the device has many applications including implanted medical delivery systems, chemical and biological instruments, fluid delivery in engines, pump coolants and refrigerants for local cooling of electronic components.

Fundamental Studies of the Mechanical Behavior of Microelectronic Thin Film Materials

DTIC Science & Technology

1991-01-01

scanning, wafer curvature technique to study the kinetics of crystallization of amorphous silicon. When a thin film of amorphous silicon crystallizes...the film and the kinetics of the crystallization process. We find the tensile stress in the film to increase by about 500 MPa when crystallization...occurs. This is a very large stress that could have significance for device processing and applications. By measuring the kinetics of this stress change

Insinuating electronics in the brain.

PubMed

Hughes, Mark A

2016-08-01

There is an expanding interface between electronic engineering and neurosurgery. Rapid advances in microelectronics and materials science, driven largely by consumer demand, are inspiring and accelerating development of a new generation of diagnostic, therapeutic, and prosthetic devices for implantation in the nervous system. This paper reviews some of the basic science underpinning their development and outlines some opportunities and challenges for their use in neurosurgery. Copyright © 2016 The Author. Published by Elsevier Ltd.. All rights reserved.

Perspectives on integrated modeling of transport processes in semiconductor crystal growth

NASA Technical Reports Server (NTRS)

Brown, Robert A.

1992-01-01

The wide range of length and time scales involved in industrial scale solidification processes is demonstrated here by considering the Czochralski process for the growth of large diameter silicon crystals that become the substrate material for modern microelectronic devices. The scales range in time from microseconds to thousands of seconds and in space from microns to meters. The physics and chemistry needed to model processes on these different length scales are reviewed.

Dual Mode Thin Film Bulk Acoustic Resonators (FBARs) Based on AlN, ZnO and GaN Films with Tilted c-Axis Orientation

DTIC Science & Technology

2010-01-01

TERMS MEMS , acoustic wave devices, acoustic wave sensors Qing-Ming Wang University of Pittsburgh 123 University Place University Club Pittsburgh, PA...resonators,” Proc. SPIE Vol. 6223, 62230I, Micro ( MEMS ) and Nanotechnologies for Space Applications; Thomas George, Zhong-Yang Cheng; Eds. (May...microelectromechanical resonators has been recognized as a technological challenge in the current microelectronics and MEMS development. The

Silicon carbide as a basis for spaceflight optical systems

NASA Astrophysics Data System (ADS)

Curcio, Michael E.

1994-09-01

New advances in the areas of microelectronics and micro-mechanical devices have created a momentum in the development of lightweight, miniaturized, electro-optical space subsystems. The performance improvements achieved and new observational techniques developed as a result, have provided a basis for a new range of Small Explorer, Discovery-class and other low-cost mission concepts for space exploration. However, the ultimate objective of low-mass, inexpensive space science missions will only be achieved with a companion development in the areas of flight optical systems and sensor instrument benches. Silicon carbide (SiC) is currently emerging as an attractive technology to fill this need. As a material basis for reflective, flight telescopes and optical benches, SiC offers: the lightweight and stiffness characteristics of beryllium; glass-like inherent stability consistent with performance to levels of diffraction-limited visible resolution; superior thermal properties down to cryogenic temperatures; and an existing, commercially-based material and processing infrastructure like aluminum. This paper will describe the current status and results of on-going technology developments to utilize these material properties in the creation of lightweight, high- performing, thermally robust, flight optical assemblies. System concepts to be discussed range from an 18 cm aperture, 4-mirror, off-axis system weighing less than 2 kg to a 0.5 m, 15 kg reimager. In addition, results in the development of a thermally-stable, `GOES-like' scan mirror will be presented.

Agricultural wastes as a resource of raw materials for developing low-dielectric glass-ceramics

PubMed Central

Danewalia, Satwinder Singh; Sharma, Gaurav; Thakur, Samita; Singh, K.

2016-01-01

Agricultural waste ashes are used as resource materials to synthesize new glass and glass-ceramics. The as-prepared materials are characterized using various techniques for their structural and dielectric properties to check their suitability in microelectronic applications. Sugarcane leaves ash exhibits higher content of alkali metal oxides than rice husk ash, which reduces the melting point of the components due to eutectic reactions. The addition of sugarcane leaves ash in rice husk ash promotes the glass formation. Additionally, it prevents the cristobalite phase formation. These materials are inherently porous, which is responsible for low dielectric permittivity i.e. 9 to 40. The presence of less ordered augite phase enhances the dielectric permittivity as compared to cristobalite and tridymite phases. The present glass-ceramics exhibit lower losses than similar materials synthesized using conventional minerals. The dielectric permittivity is independent to a wide range of temperature and frequency. The glass-ceramics developed with adequately devitrified phases can be used in microelectronic devices and other dielectric applications. PMID:27087123

[Application of microelectronics CAD tools to synthetic biology].

PubMed

Madec, Morgan; Haiech, Jacques; Rosati, Élise; Rezgui, Abir; Gendrault, Yves; Lallement, Christophe

2017-02-01

Synthetic biology is an emerging science that aims to create new biological functions that do not exist in nature, based on the knowledge acquired in life science over the last century. Since the beginning of this century, several projects in synthetic biology have emerged. The complexity of the developed artificial bio-functions is relatively low so that empirical design methods could be used for the design process. Nevertheless, with the increasing complexity of biological circuits, this is no longer the case and a large number of computer aided design softwares have been developed in the past few years. These tools include languages for the behavioral description and the mathematical modelling of biological systems, simulators at different levels of abstraction, libraries of biological devices and circuit design automation algorithms. All of these tools already exist in other fields of engineering sciences, particularly in microelectronics. This is the approach that is put forward in this paper. © 2017 médecine/sciences – Inserm.

Fabricating PFPE Membranes for Capillary Electrophoresis

NASA Technical Reports Server (NTRS)

Lee, Michael C.; Willis, Peter A.; Greer, Frank; Rolland, Jason

2009-01-01

A process has been developed for fabricating perfluoropolyether (PFPE) membranes that contain microscopic holes of precise sizes at precise locations. The membranes are to be incorporated into laboratory-on-a-chip microfluidic devices to be used in performing capillary electrophoresis. The present process is a modified version of part of the process, described in the immediately preceding article, that includes a step in which a liquid PFPE layer is cured into solid (membrane) form by use of ultraviolet light. In the present process, one exploits the fact that by masking some locations to prevent exposure to ultraviolet light, one can prevent curing of the PFPE in those locations. The uncured PFPE can be washed away from those locations in the subsequent release and cleaning steps. Thus, holes are formed in the membrane in those locations. The most straightforward way to implement the modification is to use, during the ultraviolet-curing step, an ultraviolet photomask similar to the photomasks used in fabricating microelectronic devices. In lieu of such a photomask, one could use a mask made of any patternable ultraviolet-absorbing material (for example, an ink or a photoresist).

Critical issues for the application of integrated MEMS/CMOS technologies to inertial measurement units

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith, J.H.; Ellis, J.R.; Montague, S.

1997-03-01

One of the principal applications of monolithically integrated micromechanical/microelectronic systems has been accelerometers for automotive applications. As integrated MEMS/CMOS technologies such as those developed by U.C. Berkeley, Analog Devices, and Sandia National Laboratories mature, additional systems for more sensitive inertial measurements will enter the commercial marketplace. In this paper, the authors will examine key technology design rules which impact the performance and cost of inertial measurement devices manufactured in integrated MEMS/CMOS technologies. These design parameters include: (1) minimum MEMS feature size, (2) minimum CMOS feature size, (3) maximum MEMS linear dimension, (4) number of mechanical MEMS layers, (5) MEMS/CMOS spacing.more » In particular, the embedded approach to integration developed at Sandia will be examined in the context of these technology features. Presently, this technology offers MEMS feature sizes as small as 1 {micro}m, CMOS critical dimensions of 1.25 {micro}m, MEMS linear dimensions of 1,000 {micro}m, a single mechanical level of polysilicon, and a 100 {micro}m space between MEMS and CMOS. This is applicable to modern precision guided munitions.« less

Computation for Electromigration in Interconnects of Microelectronic Devices

NASA Astrophysics Data System (ADS)

Averbuch, Amir; Israeli, Moshe; Ravve, Igor; Yavneh, Irad

2001-03-01

Reliability and performance of microelectronic devices depend to a large extent on the resistance of interconnect lines. Voids and cracks may occur in the interconnects, causing a severe increase in the total resistance and even open circuits. In this work we analyze void motion and evolution due to surface diffusion effects and applied external voltage. The interconnects under consideration are three-dimensional (sandwich) constructs made of a very thin metal film of possibly variable thickness attached to a substrate of nonvanishing conductance. A two-dimensional level set approach was applied to study the dynamics of the moving (assumed one-dimensional) boundary of a void in the metal film. The level set formulation of an electromigration and diffusion model results in a fourth-order nonlinear (two-dimensional) time-dependent PDE. This equation was discretized by finite differences on a regular grid in space and a Runge-Kutta integration scheme in time, and solved simultaneously with a second-order static elliptic PDE describing the electric potential distribution throughout the interconnect line. The well-posed three-dimensional problem for the potential was approximated via singular perturbations, in the limit of small aspect ratio, by a two-dimensional elliptic equation with variable coefficients describing the combined local conductivity of metal and substrate (which is allowed to vary in time and space). The difference scheme for the elliptic PDE was solved by a multigrid technique at each time step. Motion of voids in both weak and strong electric fields was examined, and different initial void configurations were considered, including circles, ellipses, polygons with rounded corners, a butterfly, and long grooves. Analysis of the void behavior and its influence on the resistance gives the circuit designer a tool for choosing the proper parameters of an interconnect (width-to-length ratio, properties of the line material, conductivity of the underlayer, etc.).

Monte Carlo simulation of ion-material interactions in nuclear fusion devices

NASA Astrophysics Data System (ADS)

Nieto Perez, M.; Avalos-Zuñiga, R.; Ramos, G.

2017-06-01

One of the key aspects regarding the technological development of nuclear fusion reactors is the understanding of the interaction between high-energy ions coming from the confined plasma and the materials that the plasma-facing components are made of. Among the multiple issues important to plasma-wall interactions in fusion devices, physical erosion and composition changes induced by energetic particle bombardment are considered critical due to possible material flaking, changes to surface roughness, impurity transport and the alteration of physicochemical properties of the near surface region due to phenomena such as redeposition or implantation. A Monte Carlo code named MATILDA (Modeling of Atomic Transport in Layered Dynamic Arrays) has been developed over the years to study phenomena related to ion beam bombardment such as erosion rate, composition changes, interphase mixing and material redeposition, which are relevant issues to plasma-aided manufacturing of microelectronics, components on object exposed to intense solar wind, fusion reactor technology and other important industrial fields. In the present work, the code is applied to study three cases of plasma material interactions relevant to fusion devices in order to highlight the code's capabilities: (1) the Be redeposition process on the ITER divertor, (2) physical erosion enhancement in castellated surfaces and (3) damage to multilayer mirrors used on EUV diagnostics in fusion devices due to particle bombardment.

NASA SBIR product catalog, 1991

NASA Technical Reports Server (NTRS)

1991-01-01

This catalog is a partial list of products of NASA SBIR (Small Business Innovation Research) projects that have advanced to some degree into Phase 3. While most of the products evolved from work conducted during SBIR Phase 1 and 2, a few advanced to commercial status solely from Phase 1 activities. The catalog presents information provided to NASA by SBIR contractors who wished to have their products exhibited at Technology 2001, a NASA-sponsored technology transfer conference held in San Jose, California, on December 4, 5, and 6, 1991. The catalog presents the product information in the following technology areas: computer and communication systems; information processing and AI; robotics and automation; signal and image processing; microelectronics; electronic devices and equipment; microwave electronic devices; optical devices and lasers; advanced materials; materials processing; materials testing and NDE; materials instrumentation; aerodynamics and aircraft; fluid mechanics and measurement; heat transfer devices; refrigeration and cryogenics; energy conversion devices; oceanographic instruments; atmosphere monitoring devices; water management; life science instruments; and spacecraft electromechanical systems.

Transfer of InP epilayers by wafer bonding

NASA Astrophysics Data System (ADS)

Hjort, Klas

2004-08-01

Wafer bonding increases the freedom of design in the integration of dissimilar materials. For example, it is interesting to combine III-V compounds that have direct band gap and high mobility with silicon (Si) that is extensively used in microelectronic applications. The interest to integrate III-V-based materials with Si arises primarily from two types of applications: smart pixels for optical intra- and inter-chip interconnects in the so-called optoelectronic integrated circuits, and optoelectronic devices using some material advantages of combining III-V with Si. Also, in the III-V industry larger substrates are crucial for higher efficiency in high-volume production, and especially so for monolithic microwave integrated circuits (MMIC). For indium phosphide (InP) the development of large-area substrates has not been able to keep up with market demands. One way to circumvent this problem is to use silicon substrates that are large-area, low-cost, and mechanically strong with high thermal conductivity. In addition, silicon is transparent at the emission wavelengths most often used in InP-based optoelectronics. Unfortunately, the large lattice-mismatch, 8.1%, between silicon and InP, has limited the success of heteroepitaxial growth. Hence, one alternative to be reviewed is InP-to-Si wafer bonding. When a direct semiconductor interface is not needed there are several other means of wafer bonding, e.g. adhesive, eutectic, and solid-state. These processes can be used for direct integration of small islets of epitaxially thin InP microelectronics onto other substrates, e.g. by transferring of InP-based epilayers to a Si-based microwave circuit by pick-and-place, BCB resist adhesive bonding and sacrificing of the InP substrate.

A two-dimensional (2D) analytical subthreshold swing and transconductance model of underlap dual-material double-gate (DMDG) MOSFET for analog/RF applications

NASA Astrophysics Data System (ADS)

Narendar, Vadthiya; Rai, Saurabh; Tiwari, Siddharth; Mishra, R. A.

2016-12-01

The double-gate (DG) metal-oxide-semiconductor field effect transistors (MOSFETs) are the choice of technology in sub -100 nm regime of leading microelectronics industry. To enhance the analog and RF performance of DG MOSFET, an underlap dual-material (DM) DG MOSFET device structure has been considered because, it has the advantages of both underlap as well as that of dual-material gate (DMG). A 2D analytical surface potential, subthreshold current, subthreshold swing as well as transconductance modelling of underlap DMDG MOSFET has been done by solving the Poisson's equation. It has also been found that, numerically simulated data approves the analytically modelled data with commendable accuracy. As underlap length (Lun) increases, a substantial reduction of subthreshold current due to enhanced gate control over channel regime is observed. DMG structure facilitates to improve the average velocity of carriers which leads to superior drive current of the device. The underlap DMDG MOSFET device structure demonstrates an ameliorated subthreshold characteristic. The analog figure of merits (FOMs) such as transconductance (gm), transconductance generation factor (TGF), output conductance (gd), early voltage (VEA), intrinsic gain (AV) and RF FOMs namely cut-off frequency (fT), gain frequency product (GFP), transconductance frequency product (TFP) and gain transconductance frequency product (GTFP) have been evaluated. The aforesaid analysis revels that, the device is best suited for communication related Analog/RF applications.

Memristive behavior in BaTiO 3 thin films integrated with semiconductors

NASA Astrophysics Data System (ADS)

Singamaneni, Srinivasa Rao; Prater, John; Narayan, Jay

BaTiO3 has been studied for emerging non-volatile memory applications. However, most of the previous work has focused on this material when it was deposited on insulting oxide substrates such as SrTiO3. Unfortunately, this substrate is not suitable for CMOS-based microelectronics applications. This motivated us to carry out the present work. We have studied the resistive switching behavior in BaTiO3/La0.7Sr0.3MnO3 (BTO/LSMO) heterostructures integrated with Si (100) using pulsed laser deposition1,2. I-V measurements were conducted on BTO (500nm)/LSMO (25nm) devices at 200K, with the compliance current of 10mA. Here, Pt was used as a top electrode and LSMO served as bottom electrode. A few important observations are noted: (a) broad hysteresis in forward and reverse voltage sweeps -ideal for memory applications, (b) the ratio of high resistance to low resistance state is ~600 -important for switching devices, (c) the device is stable at least up to 50 cycles. However, we found that hysteretic behavior was collapsed after 36 cycles upon oxygen annealing of the device at 1 atmospheric pressure, 200o C for 1 hour, inferring the important role of oxygen vacancies in the resistive switching behavior of BTO/LSMO device. The comprehensive experimental data will be presented and discussed.1,2.

Small temperature coefficient of resistivity of graphene/graphene oxide hybrid membranes.

PubMed

Sun, Pengzhan; Zhu, Miao; Wang, Kunlin; Zhong, Minlin; Wei, Jinquan; Wu, Dehai; Zhu, Hongwei

2013-10-09

Materials with low temperature coefficient of resistivity (TCR) are of great importance in some areas, for example, highly accurate electronic measurement instruments and microelectronic integrated circuits. In this work, we demonstrated the ultrathin graphene-graphene oxide (GO) hybrid films prepared by layer-by-layer assembly with very small TCR (30-100 °C) in the air. Electrical response of the hybrid films to temperature variation was investigated along with the progressive reduction of GO sheets. The mechanism of electrical response to temperature variation of the hybrid film was discussed, which revealed that the interaction between graphene and GO and the chemical doping effect were responsible for the tunable control of its electrical response to temperature variation. The unique properties of graphene-GO hybrid film made it a promising candidate in many areas, such as high-end film electronic device and sensor applications.

Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion

NASA Astrophysics Data System (ADS)

Sung Park, Pil; Reddy, Kongara M.; Nath, Digbijoy N.; Yang, Zhichao; Padture, Nitin P.; Rajan, Siddharth

2013-04-01

A simple method for the creation of Ohmic contact to 2D electron gas in AlGaN/GaN high electron-mobility transistors using Cr/graphene layer is demonstrated. A weak temperature dependence of this Ohmic contact observed in the range 77 to 300 K precludes thermionic emission or trap-assisted hopping as possible carrier-transport mechanisms. It is suggested that the Cr/graphene combination acts akin to a doped n-type semiconductor in contact with AlGaN/GaN heterostructure, and promotes carrier transport along percolating Al-lean paths through the AlGaN layer. This use of graphene offers a simple method for making Ohmic contacts to AlGaN/GaN heterostructures, circumventing complex additional processing steps involving high temperatures. These results could have important implications for the fabrication and manufacturing of AlGaN/GaN-based microelectronic and optoelectronic devices/sensors of the future.

A self-assembled synthesis of carbon nanotubes for interconnects.

PubMed

Chen, Zexiang; Cao, Guichuan; Lin, Zulun; Koehler, Irmgard; Bachmann, Peter K

2006-02-28

We report a novel approach to grow highly oriented, freestanding and structured carbon nanotubes (CNTs) between two substrates, using microwave plasma chemical vapour deposition. Sandwiched, multi-layered catalyst structures are employed to generate such structures. The as-grown CNTs adhere well to both the substrate and the top contact, and provide a low-resistance electric contact between the two. High-resolution scanning electron microscope (SEM) images show that the CNTs grow perpendicular to these surfaces. This presents a simple way to grow CNTs in different, predetermined directions in a single growth step. The overall resistance of a CNT bundle and two CNT-terminal contacts is measured to be about 14.7 k Ω. The corresponding conductance is close to the quantum limit conductance G(0). This illustrates that our new approach is promising for the direct assembly of CNT-based interconnects in integrated circuits (ICs) or other micro-electronic devices.

Extraordinarily Stretchable All-Carbon Collaborative Nanoarchitectures for Epidermal Sensors.

PubMed

Cai, Yichen; Shen, Jie; Dai, Ziyang; Zang, Xiaoxian; Dong, Qiuchun; Guan, Guofeng; Li, Lain-Jong; Huang, Wei; Dong, Xiaochen

2017-08-01

Multifunctional microelectronic components featuring large stretchability, high sensitivity, high signal-to-noise ratio (SNR), and broad sensing range have attracted a huge surge of interest with the fast developing epidermal electronic systems. Here, the epidermal sensors based on all-carbon collaborative percolation network are demonstrated, which consist 3D graphene foam and carbon nanotubes (CNTs) obtained by two-step chemical vapor deposition processes. The nanoscaled CNT networks largely enhance the stretchability and SNR of the 3D microarchitectural graphene foams, endowing the strain sensor with a gauge factor as high as 35, a wide reliable sensing range up to 85%, and excellent cyclic stability (>5000 cycles). The flexible and reversible strain sensor can be easily mounted on human skin as a wearable electronic device for real-time and high accuracy detecting of electrophysiological stimuli and even for acoustic vibration recognition. The rationally designed all-carbon nanoarchitectures are scalable, low cost, and promising in practical applications requiring extraordinary stretchability and ultrahigh SNRs. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Supply Chain Risk Management: An Introduction to the Credible Threat

DTIC Science & Technology

2016-08-01

connected. All we have to do is pull out our phones, tablets, laptops or any other similar device and get the information we need virtually...with the sup­ ply chain, especially when it comes to the use of electronics, computers and other computerized components. The attempt to remove or...Trusted State­of­the­Art Microelectronics Strategy Study ,“ July 2015, Potomac Institute for Policy Studies report. Figure 2. An Organization’s

Design, processing and testing of LSI arrays: Hybrid microelectronics task

NASA Technical Reports Server (NTRS)

Himmel, R. P.; Stuhlbarg, S. M.; Ravetti, R. G.; Zulueta, P. J.

1979-01-01

Mathematical cost factors were generated for both hybrid microcircuit and printed wiring board packaging methods. A mathematical cost model was created for analysis of microcircuit fabrication costs. The costing factors were refined and reduced to formulae for computerization. Efficient methods were investigated for low cost packaging of LSI devices as a function of density and reliability. Technical problem areas such as wafer bumping, inner/outer leading bonding, testing on tape, and tape processing, were investigated.

Carbon nanotubes for thermal interface materials in microelectronic packaging

NASA Astrophysics Data System (ADS)

Lin, Wei

As the integration scale of transistors/devices in a chip/system keeps increasing, effective cooling has become more and more important in microelectronics. To address the thermal dissipation issue, one important solution is to develop thermal interface materials with higher performance. Carbon nanotubes, given their high intrinsic thermal and mechanical properties, and their high thermal and chemical stabilities, have received extensive attention from both academia and industry as a candidate for high-performance thermal interface materials. The thesis is devoted to addressing some challenges related to the potential application of carbon nanotubes as thermal interface materials in microelectronics. These challenges include: 1) controlled synthesis of vertically aligned carbon nanotubes on various bulk substrates via chemical vapor deposition and the fundamental understanding involved; 2) development of a scalable annealing process to improve the intrinsic properties of synthesized carbon nanotubes; 3) development of a state-of-art assembling process to effectively implement high-quality vertically aligned carbon nanotubes into a flip-chip assembly; 4) a reliable thermal measurement of intrinsic thermal transport property of vertically aligned carbon nanotube films; 5) improvement of interfacial thermal transport between carbon nanotubes and other materials. The major achievements are summarized. 1. Based on the fundamental understanding of catalytic chemical vapor deposition processes and the growth mechanism of carbon nanotube, fast synthesis of high-quality vertically aligned carbon nanotubes on various bulk substrates (e.g., copper, quartz, silicon, aluminum oxide, etc.) has been successfully achieved. The synthesis of vertically aligned carbon nanotubes on the bulk copper substrate by the thermal chemical vapor deposition process has set a world record. In order to functionalize the synthesized carbon nanotubes while maintaining their good vertical alignment, an in situ functionalization process has for the first time been demonstrated. The in situ functionalization renders the vertically aligned carbon nanotubes a proper chemical reactivity for forming chemical bonding with other substrate materials such as gold and silicon. 2. An ultrafast microwave annealing process has been developed to reduce the defect density in vertically aligned carbon nanotubes. Raman and thermogravimetric analyses have shown a distinct defect reduction in the CNTs annealed in microwave for 3 min. Fibers spun from the as-annealed CNTs, in comparison with those from the pristine CNTs, show increases of ˜35% and ˜65%, respectively, in tensile strength (˜0.8 GPa) and modulus (˜90 GPa) during tensile testing; an ˜20% improvement in electrical conductivity (˜80000 S m-1) was also reported. The mechanism of the microwave response of CNTs was discussed. Such a microwave annealing process has been extended to the preparation of reduced graphene oxide. 3. Based on the fundamental understanding of interfacial thermal transport and surface chemistry of metals and carbon nanotubes, two major transfer/assembling processes have been developed: molecular bonding and metal bonding. Effective improvement of the interfacial thermal transport has been achieved by the interfacial bonding. 4. The thermal diffusivity of vertically aligned carbon nanotube (VACNT, multi-walled) films was measured by a laser flash technique, and shown to be ˜30 mm2 s-1 along the tube-alignment direction. The calculated thermal conductivities of the VACNT film and the individual CNTs are ˜27 and ˜540 W m-1 K-1, respectively. The technique was verified to be reliable although a proper sampling procedure is critical. A systematic parametric study of the effects of defects, buckling, tip-to-tip contacts, packing density, and tube-tube interaction on the thermal diffusivity was carried out. Defects and buckling decreased the thermal diffusivity dramatically. An increased packing density was beneficial in increasing the collective thermal conductivity of the VACNT film; however, the increased tube-tube interaction in dense VACNT films decreased the thermal conductivity of the individual CNTs. The tip-to-tip contact resistance was shown to be ˜1x10-7 m2 K W -1. The study will shed light on the potential application of VACNTs as thermal interface materials in microelectronic packaging. 5. A combined process of in situ functionalization and microwave curing has been developed to effective enhance the interface between carbon nanotubes and the epoxy matrix. Effective medium theory has been used to analyze the interfacial thermal resistance between carbon nanotubes and polymer matrix, and that between graphite nanoplatlets and polymer matrix.

La cryomicroélectronique

NASA Astrophysics Data System (ADS)

Kamarinos, Georges

1991-02-01

The Integrated Circuits and the microelectronics devices working in temperatures lower than 100 K are studied by cryomicroelectronics. In this short review paper the development of this new branch of microelectronics is described. Particularly the advantages and the drawbacks of the cooling of integrated circuits and devices are listed. Then the current research axis are given. They correspond to two different approaches ; the " classic " one which is based to the materials used in the present VLSI technology and the innovative way which aims at using new HT_c superconductors. L'objet de la cryomicroélectronique est l'étude des Circuits Intégrés et des composants microélectroniques à des températures inférieures à 100 K. Cet article de revue décrit très brièvement l'état d'avancement des connaissances relatives aux avantages et aux inconvénients des composants et Circuits Intégrés au Silicium fonctionnant à basse température. Ensuite on expose les axes de recherche actuels ; ils sont relatifs à deux approches : l'une, classique, est basée sur les matériaux utilisés actuellement dans la technologie de l'intégration à grande échelle; l'autre, novatrice, vise à utiliser les matériaux supraconducteurs à haute température critique.

Domain wall nanoelectronics

NASA Astrophysics Data System (ADS)

Catalan, G.; Seidel, J.; Ramesh, R.; Scott, J. F.

2012-01-01

Domains in ferroelectrics were considered to be well understood by the middle of the last century: They were generally rectilinear, and their walls were Ising-like. Their simplicity stood in stark contrast to the more complex Bloch walls or Néel walls in magnets. Only within the past decade and with the introduction of atomic-resolution studies via transmission electron microscopy, electron holography, and atomic force microscopy with polarization sensitivity has their real complexity been revealed. Additional phenomena appear in recent studies, especially of magnetoelectric materials, where functional properties inside domain walls are being directly measured. In this paper these studies are reviewed, focusing attention on ferroelectrics and multiferroics but making comparisons where possible with magnetic domains and domain walls. An important part of this review will concern device applications, with the spotlight on a new paradigm of ferroic devices where the domain walls, rather than the domains, are the active element. Here magnetic wall microelectronics is already in full swing, owing largely to the work of Cowburn and of Parkin and their colleagues. These devices exploit the high domain wall mobilities in magnets and their resulting high velocities, which can be supersonic, as shown by Kreines’ and co-workers 30 years ago. By comparison, nanoelectronic devices employing ferroelectric domain walls often have slower domain wall speeds, but may exploit their smaller size as well as their different functional properties. These include domain wall conductivity (metallic or even superconducting in bulk insulating or semiconducting oxides) and the fact that domain walls can be ferromagnetic while the surrounding domains are not.

Low-Damage Sputter Deposition on Graphene

NASA Astrophysics Data System (ADS)

Chen, Ching-Tzu; Casu, Emanuele; Gajek, Marcin; Raoux, Simone

2013-03-01

Despite its versatility and prevalence in the microelectronics industry, sputter deposition has seen very limited applications for graphene-based electronics. We have systematically investigated the sputtering induced graphene defects and identified the reflected high-energy neutrals of the sputtering gas as the primary cause of damage. In this talk, we introduce a novel sputtering technique that is shown to dramatically reduce bombardment of the fast neutrals and improve the structural integrity of the underlying graphene layer. We also demonstrate that sputter deposition and in-situ oxidation of 1 nm Al film at elevated temperatures yields homogeneous, fully covered oxide films with r.m.s. roughness much less than 1 monolayer, which shows the potential of using such technique for gate oxides, tunnel barriers, and multilayer fabrication in a wide range of graphene devices.

Deep Space 1: Testing New Technologies for Future Small Bodies Missions

NASA Technical Reports Server (NTRS)

Rayman, Marc D.

2001-01-01

Launched on October 24, 1998, Deep Space 1 (DS1) was the first mission of NASA's New Millennium Program, chartered to validate in space high-risk, new technologies important for future space science programs. The advanced technology payload that was tested on DS1 comprises solar electric propulsion, solar concentrator arrays, autonomous on-board navigation and other autonomous systems, several telecommunications and microelectronics devices, and two low-mass integrated science instrument packages. The mission met or exceeded all of its success criteria. The 12 technologies were rigorously exercised so that subsequent flight projects would not have to incur the cost and risk of being the fist users of these new capabilities. Examples of the benefits to future small body missions from DS1's technologies will be described.

Study of bulk Hafnium oxide (HfO2) under compression

NASA Astrophysics Data System (ADS)

Pathak, Santanu; Mandal, Guruprasad; Das, Parnika

2018-04-01

Hafnium oxide (HfO2) is a technologically important material. This material has K-value of 25 and band gap 5.8 eV. A k value of 25-30 is preferred for a gate dielectric [1]. As it shows good insulating and capacitive properties, HfO2 is being considered as a replacement to SiO2 in microelectronic devices as gate dielectrics. On the other hand because of toughening mechanism due to phase transformation induced by stress field observed in these oxides, HFO2 has been a material of investigations in various configurations for a very long time. However the controversies about phase transition of HfO2 under pressure still exists. High quality synchrotron radiation has been used to study the structural phase transition of HfO2 under pressure.

Advanced system on a chip microelectronics for spacecraft and science instruments

NASA Astrophysics Data System (ADS)

Paschalidis, Nikolaos P.

2003-01-01

The explosive growth of the modern microelectronics field opens new horizons for the development of new lightweight, low power, and smart spacecraft and science instrumentation systems in the new millennium explorations. Although this growth is mostly driven by the commercial need for low power, portable and computationally intensive products, the applicability is obvious in the space sector. The additional difficulties needed to be overcome for applicability in space include radiation hardness for total ionizing dose and single event effects (SEE), and reliability. Additionally, this new capability introduces a whole new philosophy of design and R&D, with strong implications in organizational and inter-agency program management. One key component specifically developed towards low power, small size, highly autonomous spacecraft systems, is the smart sensor remote input/output (TRIO) chip. TRIO can interface to 32 transducers with current sources/sinks and voltage sensing. It includes front-end analog signal processing, a 10-bit ADC, memory, and standard serial and parallel I/Os. These functions are very useful for spacecraft and subsystems health and status monitoring, and control actions. The key contributions of the TRIO are feasibility of modular architectures, elimination of several miles of wire harnessing, and power savings by orders of magnitude. TRIO freely operates from a single power supply 2.5- 5.5 V with power dissipation <10 mW. This system on a chip device rapidly becomes a NASA and Commercial Space standard as it is already selected by thousands in several new millennium missions, including Europa Orbiter, Mars Surveyor Program, Solar Probe, Pluto Express, Stereo, Contour, Messenger, etc. In the Science Instrumentation field common instruments that can greatly take advantage of the new technologies are: energetic-particle/plasma and wave instruments, imagers, mass spectrometers, X-ray and UV spectrographs, magnetometers, laser rangefinding instruments, etc. Common measurements that apply to many of these instruments are precise time interval measurement and high resolution read-out of solid state detectors. A precise time interval measurement chip was specially developed that achieves ˜100 ps (×10 improvement) time resolution at a power dissipation ˜20 mW (×50 improvement), dead time ˜1.5 μs (×20 improvement), and chip die size 5 mm×5 mm versus two 20 cm×20 cm doubled sided boards. This device is selected as a key enabling technology for several NASA particle, delay line imaging, and laser range finding instruments onboard (NASA Image, Messenger, etc. missions). Another device with universal application is radiation energy read-out from solid state detectors. Multi-channel low-power and end-to-end sensor input—digital output is key for the new generation instruments. The readout channel comprises of a Charge Sensitive Preamplifier with a target sensitivity of ˜1 KeV FWHM at 20 pf detector capacitance, a Shaper Amplifier with programmable time constant/gain, and an ADC. The read-out chip together with the precise time interval chip comprises the essential elements of a common particle spectroscopy instrument. To mention some more applications fast-signal acquisition—and digitization is a very useful function for a category of instrument such as mass spectroscopy and profile laser rangefinding. The single chip approach includes a high bandwidth preamplifier, fast sampling ˜5 ns, analog memory ˜10K locations, 12-bit ADC and serial/parallel I/Os. The wealth of the applications proves the advanced microelectronics field as a key enabling technology for the new millennium space exploration.

Sensing systems using chip-based spectrometers

NASA Astrophysics Data System (ADS)

Nitkowski, Arthur; Preston, Kyle J.; Sherwood-Droz, Nicolás.; Behr, Bradford B.; Bismilla, Yusuf; Cenko, Andrew T.; DesRoches, Brandon; Meade, Jeffrey T.; Munro, Elizabeth A.; Slaa, Jared; Schmidt, Bradley S.; Hajian, Arsen R.

2014-06-01

Tornado Spectral Systems has developed a new chip-based spectrometer called OCTANE, the Optical Coherence Tomography Advanced Nanophotonic Engine, built using a planar lightwave circuit with integrated waveguides fabricated on a silicon wafer. While designed for spectral domain optical coherence tomography (SD-OCT) systems, the same miniaturized technology can be applied to many other spectroscopic applications. The field of integrated optics enables the design of complex optical systems which are monolithically integrated on silicon chips. The form factors of these systems can be significantly smaller, more robust and less expensive than their equivalent free-space counterparts. Fabrication techniques and material systems developed for microelectronics have previously been adapted for integrated optics in the telecom industry, where millions of chip-based components are used to power the optical backbone of the internet. We have further adapted the photonic technology platform for spectroscopy applications, allowing unheard-of economies of scale for these types of optical devices. Instead of changing lenses and aligning systems, these devices are accurately designed programmatically and are easily customized for specific applications. Spectrometers using integrated optics have large advantages in systems where size, robustness and cost matter: field-deployable devices, UAVs, UUVs, satellites, handheld scanning and more. We will discuss the performance characteristics of our chip-based spectrometers and the type of spectral sensing applications enabled by this technology.

RF plasma cleaning of silicon substrates with high-density polyethylene contamination

NASA Astrophysics Data System (ADS)

Cagomoc, Charisse Marie D.; De Leon, Mark Jeffry D.; Ebuen, Anna Sophia M.; Gilos, Marlo Nicole R.; Vasquez, Magdaleno R., Jr.

2018-01-01

Upon contact with a polymeric material, microparticles from the polymer may adhere to a silicon (Si) substrate during device processing. The adhesion contaminates the surface and, in turn, leads to defects in the fabricated Si-based microelectronic devices. In this study, Si substrates with artificially induced high-density polyethylene (HDPE) contamination was exposed to 13.56 MHz radio frequency (RF) plasma utilizing argon and oxygen gas admixtures at a power density of 5.6 W/cm2 and a working pressure of 110 Pa for up to 6 min of treatment. Optical microscopy studies revealed the removal of up to 74% of the polymer contamination upon plasma exposure. Surface free energy (SFE) increased owing to the removal of contaminants as well as the formation of polar groups on the Si surface after plasma treatment. Atomic force microscopy scans showed a decrease in surface roughness from 12.25 nm for contaminated samples to 0.77 nm after plasma cleaning. The smoothening effect can be attributed to the removal of HDPE particles from the surface. In addition, scanning electron microscope images showed that there was a decrease in the amount of HDPE contaminants adhering onto the surface after plasma exposure.

Silicon-based optoelectronics: Monolithic integration for WDM

NASA Astrophysics Data System (ADS)

Pearson, Matthew Richard T.

2000-10-01

This thesis details the development of enabling technologies required for inexpensive, monolithic integration of Si-based wavelength division multiplexing (WDM) components and photodetectors. The work involves the design and fabrication of arrayed waveguide grating demultiplexers in silicon-on-insulator (SOI), the development of advanced SiGe photodetectors capable of photodetection at 1.55 mum wavelengths, and the development of a low cost fabrication technique that enables the high volume production of Si-based photonic components. Arrayed waveguide grating (AWG) demultiplexers were designed and fabricated in SOI. The fabrication of AWGs in SOI has been reported in the literature, however there are a number of design issues specific to the SOI material system that can have a large effect on device performance and design, and have not been theoretically examined in earlier work. The SOI AWGs presented in this thesis are the smallest devices of this type reported, and they exhibit performance acceptable for commercial applications. The SiGe photodetectors reported in the literature exhibit extremely low responsivities at wavelengths near 1.55 mum. We present the first use of three dimensional growth modes to enhance the photoresponse of SiGe at 1.55 mum wavelengths. Metal semiconductor-metal (MSM) photodetectors were fabricated using this undulating quantum well structure, and demonstrate the highest responsivities yet reported for a SiGe-based photodetector at 1.55 mum. These detectors were monolithically integrated with low-loss SOI waveguides, enabling integration with nearly any Si-based passive WDM component. The pursuit of inexpensive Si-based photonic components also requires the development of new manufacturing techniques that are more suitable for high volume production. This thesis presents the development of a low cost fabrication technique based on the local oxidation of silicon (LOCOS), a standard processing technique used for Si integrated circuits. This process is developed for both SiGe and SOI waveguides, but is shown to be commercially suitable only for SOI waveguide devices. The technique allows nearly any Si microelectronics fabrication facility to begin manufacturing optical components with minimal change in processing equipment or techniques. These enabling technologies provide the critical elements for inexpensive, monolithic integration in a Si-based system.

Goals, achievements of microelectronics program

NASA Astrophysics Data System (ADS)

Schronk, L.

1985-05-01

Besides reviewing the objectives of the government's microelectronics program, the Microelectronics Enterprise, the production of metal oxide semiconductors and bipolar integrated-circuit chips, specific research and development results to date, and the plans for future activity are discussed. Marketing and domestic demand are discussed.

Sandia QIS Capabilities.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muller, Richard P.

2017-07-01

Sandia National Laboratories has developed a broad set of capabilities in quantum information science (QIS), including elements of quantum computing, quantum communications, and quantum sensing. The Sandia QIS program is built atop unique DOE investments at the laboratories, including the MESA microelectronics fabrication facility, the Center for Integrated Nanotechnologies (CINT) facilities (joint with LANL), the Ion Beam Laboratory, and ASC High Performance Computing (HPC) facilities. Sandia has invested $75 M of LDRD funding over 12 years to develop unique, differentiating capabilities that leverage these DOE infrastructure investments.

Photovoltaic Power for Future NASA Missions

NASA Technical Reports Server (NTRS)

Landis, Geoffrey; Bailey, Sheila G.; Lyons, Valerie J. (Technical Monitor)

2002-01-01

Recent advances in crystalline solar cell technology are reviewed. Dual-junction and triple-junction solar cells are presently available from several U. S. vendors. Commercially available triple-junction cells consisting of GaInP, GaAs, and Ge layers can produce up to 27% conversion efficiency in production lots. Technology status and performance figures of merit for currently available photovoltaic arrays are discussed. Three specific NASA mission applications are discussed in detail: Mars surface applications, high temperature solar cell applications, and integrated microelectronic power supplies for nanosatellites.

Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages.

PubMed

Carlton, Holly D; Elmer, John W; Li, Yan; Pacheco, Mario; Goyal, Deepak; Parkinson, Dilworth Y; MacDowell, Alastair A

2016-04-13

Synchrotron radiation micro-tomography (SRµT) is a non-destructive three-dimensional (3D) imaging technique that offers high flux for fast data acquisition times with high spatial resolution. In the electronics industry there is serious interest in performing failure analysis on 3D microelectronic packages, many which contain multiple levels of high-density interconnections. Often in tomography there is a trade-off between image resolution and the volume of a sample that can be imaged. This inverse relationship limits the usefulness of conventional computed tomography (CT) systems since a microelectronic package is often large in cross sectional area 100-3,600 mm(2), but has important features on the micron scale. The micro-tomography beamline at the Advanced Light Source (ALS), in Berkeley, CA USA, has a setup which is adaptable and can be tailored to a sample's properties, i.e., density, thickness, etc., with a maximum allowable cross-section of 36 x 36 mm. This setup also has the option of being either monochromatic in the energy range ~7-43 keV or operating with maximum flux in white light mode using a polychromatic beam. Presented here are details of the experimental steps taken to image an entire 16 x 16 mm system within a package, in order to obtain 3D images of the system with a spatial resolution of 8.7 µm all within a scan time of less than 3 min. Also shown are results from packages scanned in different orientations and a sectioned package for higher resolution imaging. In contrast a conventional CT system would take hours to record data with potentially poorer resolution. Indeed, the ratio of field-of-view to throughput time is much higher when using the synchrotron radiation tomography setup. The description below of the experimental setup can be implemented and adapted for use with many other multi-materials.

Laser processing of ceramics for microelectronics manufacturing

NASA Astrophysics Data System (ADS)

Sposili, Robert S.; Bovatsek, James; Patel, Rajesh

2017-03-01

Ceramic materials are used extensively in the microelectronics, semiconductor, and LED lighting industries because of their electrically insulating and thermally conductive properties, as well as for their high-temperature-service capabilities. However, their brittleness presents significant challenges for conventional machining processes. In this paper we report on a series of experiments that demonstrate and characterize the efficacy of pulsed nanosecond UV and green lasers in machining ceramics commonly used in microelectronics manufacturing, such as aluminum oxide (alumina) and aluminum nitride. With a series of laser pocket milling experiments, fundamental volume ablation rate and ablation efficiency data were generated. In addition, techniques for various industrial machining processes, such as shallow scribing and deep scribing, were developed and demonstrated. We demonstrate that lasers with higher average powers offer higher processing rates with the one exception of deep scribes in aluminum nitride, where a lower average power but higher pulse energy source outperformed a higher average power laser.

The Legacy of the Microelectronics Education Programme.

ERIC Educational Resources Information Center

Thorne, Michael

1987-01-01

Describes the Microelectronics Education Programme (MEP), a plan developed to help British secondary school students learn about microcomputers and the role of technology in society, and its successor, the Microelectronics Support Unit (MESU). Highlights include curriculum development, teacher training, computer assisted instruction and the…

Educational Implications of Microelectronics and Microprocessors.

ERIC Educational Resources Information Center

Harris, N. D. C., Ed.

This conference report explores microelectronic technology, its effect on educational methods and objectives, and its implications for educator responsibilities. Two main areas were considered: the significance of the likely impact of the large scale introduction of microprocessors and microelectronics on commercial and industrial processes, the…

Highly Selective and Sensitive Self-Powered Glucose Sensor Based on Capacitor Circuit.

PubMed

Slaughter, Gymama; Kulkarni, Tanmay

2017-05-03

Enzymatic glucose biosensors are being developed to incorporate nanoscale materials with the biological recognition elements to assist in the rapid and sensitive detection of glucose. Here we present a highly sensitive and selective glucose sensor based on capacitor circuit that is capable of selectively sensing glucose while simultaneously powering a small microelectronic device. Multi-walled carbon nanotubes (MWCNTs) is chemically modified with pyrroloquinoline quinone glucose dehydrogenase (PQQ-GDH) and bilirubin oxidase (BOD) at anode and cathode, respectively, in the biofuel cell arrangement. The input voltage (as low as 0.25 V) from the biofuel cell is converted to a stepped-up power and charged to the capacitor to the voltage of 1.8 V. The frequency of the charge/discharge cycle of the capacitor corresponded to the oxidation of glucose. The biofuel cell structure-based glucose sensor synergizes the advantages of both the glucose biosensor and biofuel cell. In addition, this glucose sensor favored a very high selectivity towards glucose in the presence of competing and non-competing analytes. It exhibited unprecedented sensitivity of 37.66 Hz/mM.cm 2 and a linear range of 1 to 20 mM. This innovative self-powered glucose sensor opens new doors for implementation of biofuel cells and capacitor circuits for medical diagnosis and powering therapeutic devices.

Evolution from electrophysiologic to hemodynamic monitoring: the story of left atrial and pulmonary artery pressure monitors.

PubMed

Mooney, Deirdre M; Fung, Erik; Doshi, Rahul N; Shavelle, David M

2015-01-01

Heart failure (HF) is a costly, challenging and highly prevalent medical condition. Hospitalization for acute decompensation is associated with high morbidity and mortality. Despite application of evidence-based medical therapies and technologies, HF remains a formidable challenge for virtually all healthcare systems. Repeat hospitalizations for acute decompensated HF (ADHF) can have major financial impact on institutions and resources. Early and accurate identification of impending ADHF is of paramount importance yet there is limited high quality evidence or infrastructure to guide management in the outpatient setting. Historically, ADHF was identified by physical exam findings or invasive hemodynamic monitoring during a hospital admission; however, advances in medical microelectronics and the advent of device-based diagnostics have enabled long-term ambulatory monitoring of HF patients in the outpatient setting. These monitors have evolved from piggybacking on cardiac implantable electrophysiologic devices to standalone implantable hemodynamic monitors that transduce left atrial or pulmonary artery pressures as surrogate measures of left ventricular filling pressure. As technology evolves, devices will likely continue to miniaturize while their capabilities grow. An important, persistent challenge that remains is developing systems to translate the large volumes of real-time data, particularly data trends, into actionable information that leads to appropriate, safe and timely interventions without overwhelming outpatient cardiology and general medical practices. Future directions for implantable hemodynamic monitors beyond their utility in heart failure may include management of other major chronic diseases such as pulmonary hypertension, end stage renal disease and portal hypertension.

Numerical Simulation and Experiments of Fatigue Crack Growth in Multi-Layer Structures of MEMS and Microelectronic Devices

DTIC Science & Technology

2006-12-01

ABAQUS by use of the UEL subroutine feature. The damage variable was defined on averaged variables per element (Roe and Siegmund, 2003). The location of... thermal expansion (CTE) which is similar to silicon. During the anodic bonding process, the stack of silicon and glass wafers is placed on a hot plate and...Brinckmann, T. Siegmund, "Modeling fatigue crack growth with ABAQUS ," 2005 ABAQUS Fracture Review Team Meeting, Providence, RI, (2005). 8. S

1997 International Semiconductor Device Research Symposium (4th) Proceedings, Held in Charlottesville, Virginia on December 10-13, 1997

DTIC Science & Technology

1998-01-01

Matagne1𔃼, Jean -Pierre Leburton1 Jacques Destine2, Guy Cantraine2 1Beckman Institute, University of Illinois at Urbana-Champaign , Urbana, IL 61820...PROCESSES R. Peter Smith, Suzanne C. Martin, Moonil Kim, Jean Bruston, Imran Mehdi, Dexter Humphrey, Michael Gaidis, Neal Erickson*, and Peter H...SEV/VSE, Feb. 1981 G. Galup-Montoro, M. Schneider, S. Acosta, R. Pinto , Proc. Brazilian Microelectronics Conference SBMICRO󈨤,1996. A. Cunha, O

Long working distance interference microscope

DOEpatents

Sinclair, Michael B.; DeBoer, Maarten P.; Smith, Norman F.

2004-04-13

Disclosed is a long working distance interference microscope suitable for three-dimensional imaging and metrology of MEMS devices and test structures on a standard microelectronics probe station. The long working distance of 10-30 mm allows standard probes or probe cards to be used. This enables nanometer-scale 3-D height profiles of MEMS test structures to be acquired across an entire wafer. A well-matched pair of reference/sample objectives is not required, significantly reducing the cost of this microscope, as compared to a Linnik microinterferometer.

Quantifying patient adherence during active orthodontic treatment with removable appliances using microelectronic wear-time documentation.

PubMed

Schäfer, Katharina; Ludwig, Björn; Meyer-Gutknecht, Hannes; Schott, Timm Cornelius

2015-02-01

The aim of this study was to quantify the wear times of removable appliances during active orthodontic treatment. The wear times of 141 orthodontic patients treated with active removable appliances in different locations were documented over a period of 3 months using an incorporated microsensor. Gender, age, treatment location, health insurance status, and type of device were evaluated with respect to wear time. Significant associations between wear times and patient factors were calculated using non-parametric tests. The median daily wear time was 9.7 hours/day for the entire cohort, far less than the 15 hours/day prescribed. Younger patients wore their appliances for longer than older patients (7-9 years 12.1 hours/day, 10-12 years 9.8 hours/day, and 13-15 years 8.5 hours/day; P < 0.0001). The median wear time for females (10.6 hours/day) was 1.4 hours/day longer than males (9.3 hours/day; P = 0.017). Patients treated at different locations wore their devices with a difference of up to 5.0 hours/day. Privately insured patients had significantly longer median wear times than statutorily insured patients. No significant difference in wear time was noted according to device type. The daily wear time of removable appliances during the active phase of orthodontic therapy can be routinely quantified using integrated microelectronic sensors. The relationship between orthodontist and patient seems to play a key role in patient adherence. Wear-time documentation provides the basis for more individualized wear-time recommendations for patients with removable appliances. This could result in a more efficient, shorter, and less painful orthodontic therapy. © The Author 2014. Published by Oxford University Press on behalf of the European Orthodontic Society. All rights reserved. For permissions, please email: journals.permissions@oup.com.

Texture in thin film silicides and germanides: A review

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Schutter, B., E-mail: bob.deschutter@ugent.be; De Keyser, K.; Detavernier, C.

Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi{sub 2}, C54-TiSi{sub 2}, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si{sub 1−x}Ge{sub x} in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is ofmore » utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.« less

Silicon Integrated Optics: Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Shearn, Michael Joseph, II

For decades, the microelectronics industry has sought integration and miniaturization as canonized in Moore's Law, and has continued doubling transistor density about every two years. However, further miniaturization of circuit elements is creating a bandwidth problem as chip interconnect wires shrink as well. A potential solution is the creation of an on-chip optical network with low delays that would be impossible to achieve using metal buses. However, this technology requires integrating optics with silicon microelectronics. The lack of efficient silicon optical sources has stymied efforts of an all-Si optical platform. Instead, the integration of efficient emitter materials, such as III-V semiconductors, with Si photonic structures is a low-cost, CMOS-compatible alternative platform. This thesis focuses on making and measuring on-chip photonic structures suitable for on-chip optical networking. The first part of the thesis assesses processing techniques of silicon and other semiconductor materials. Plasmas for etching and surface modification are described and used to make bonded, hybrid Si/III-V structures. Additionally, a novel masking method using gallium implantation into silicon for pattern definition is characterized. The second part of the thesis focuses on demonstrations of fabricated optical structures. A dense array of silicon devices is measured, consisting of fully-etched grating couplers, low-loss waveguides and ring resonators. Finally, recent progress in the Si/III-V hybrid system is discussed. Supermode control of devices is described, which uses changing Si waveguide width to control modal overlap with the gain material. Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing a CMOS-compatible process suitable for integration on in electronics platforms. Future prospects and ultimate limits of Si devices and the hybrid Si/III-V system are also considered.

Texture in thin film silicides and germanides: A review

NASA Astrophysics Data System (ADS)

De Schutter, B.; De Keyser, K.; Lavoie, C.; Detavernier, C.

2016-09-01

Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi2, C54-TiSi2, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si1-xGex in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is of utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.

[Management of hearing impairment in adults].

PubMed

Frachet, Bruno; Poncet-Wallet, Christine; Ernst, Imilie; Quéruel, Françoise; Eshraghi, Adrien

2009-10-20

Hearing impairment, mainly the deafness with possible distortions, assorted with tinnitus concerns about 4 million of the French population. It can be of variable severity. Deafness is an invisible disability until we must answer a question. The permanent improvement of the computer and microelectronics sciences benefit to the prosthetic devices: cochlear implants compensate for complete hearing loss, hearing aids are hidden by being miniaturized, being partially or totally implantable. The management of disability is not limited to this material part: human assistance and assistive devices are part of the armory. Rest to continue and to increase the financial support. This claim is obviously not specific to disability hearing although the hearing aid is only refunded 138 Euro per device for a unit cost from 1300 Euro to 2500 Euro with an observed lifetime of 4 or 5 years.

A Survey of Current Trends in Master's Programs in Microelectronics

ERIC Educational Resources Information Center

Bozanic, Mladen; Sinha, Saurabh

2018-01-01

Contribution: This paper brings forward a paradigm shift in microelectronic and nanoelectronic engineering education. Background: An increasing number of universities are offering graduate-level electrical engineering degree programs with multi-disciplinary Master's-level specialization in microelectronics or nanoelectronics. The paradigm shift…

Microelectronics in Education

ERIC Educational Resources Information Center

Orton, Richard J. J.

2011-01-01

The history and meaning of the term "microelectronics" is reviewed, followed by a discussion of the key inventions of the Intel microprocessor in 1971 and the Texas Instruments electronic pocket calculator in 1975. The six characteristic features of microelectronic components are then defined. The UK prime minister Jim Callaghan's…

454th Brookhaven Lecture

ScienceCinema

Charles Black

2017-12-09

Black discusses examples of integrating self-assembly into semiconductor microelectronics, where advances in the ability to define circuit elements at ever-higher resolution have largely fueled more than 40 years of consistent performance improvements

Electrical properties of epoxies used in hybrid microelectronics

NASA Technical Reports Server (NTRS)

Stout, C. W.

1976-01-01

The electrical properties and basic characteristics of the structure of conductive epoxies were studied. The results of the experimental work performed to measure the electrical properties of epoxies are presented.

Rapid vapor deposition of highly conformal silica nanolaminates.

PubMed

Hausmann, Dennis; Becker, Jill; Wang, Shenglong; Gordon, Roy G

2002-10-11

Highly uniform and conformal coatings can be made by the alternating exposures of a surface to vapors of two reactants, in a process commonly called atomic layer deposition (ALD). The application of ALD has, however, been limited because of slow deposition rates, with a theoretical maximum of one monolayer per cycle. We show that alternating exposure of a surface to vapors of trimethylaluminum and tris(tert-butoxy)silanol deposits highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates at rates of 12 nanometers (more than 32 monolayers) per cycle. This process allows for the uniform lining or filling of long, narrow holes. We propose that these ALD layers grow by a previously unknown catalytic mechanism that also operates during the rapid ALD of many other metal silicates. This process should allow improved production of many devices, such as trench insulation between transistors in microelectronics, planar waveguides, microelectromechanical structures, multilayer optical filters, and protective layers against diffusion, oxidation, or corrosion.

Graphene growth on Ge(100)/Si(100) substrates by CVD method.

PubMed

Pasternak, Iwona; Wesolowski, Marek; Jozwik, Iwona; Lukosius, Mindaugas; Lupina, Grzegorz; Dabrowski, Pawel; Baranowski, Jacek M; Strupinski, Wlodek

2016-02-22

The successful integration of graphene into microelectronic devices is strongly dependent on the availability of direct deposition processes, which can provide uniform, large area and high quality graphene on nonmetallic substrates. As of today the dominant technology is based on Si and obtaining graphene with Si is treated as the most advantageous solution. However, the formation of carbide during the growth process makes manufacturing graphene on Si wafers extremely challenging. To overcome these difficulties and reach the set goals, we proposed growth of high quality graphene layers by the CVD method on Ge(100)/Si(100) wafers. In addition, a stochastic model was applied in order to describe the graphene growth process on the Ge(100)/Si(100) substrate and to determine the direction of further processes. As a result, high quality graphene was grown, which was proved by Raman spectroscopy results, showing uniform monolayer films with FWHM of the 2D band of 32 cm(-1).

Miniaturized Environmental Monitoring Instrumentation

DOE Office of Scientific and Technical Information (OSTI.GOV)

C. B. Freidhoff

1997-09-01

The objective of the Mass Spectrograph on a Chip (MSOC) program is the development of a miniature, multi-species gas sensor fabricated using silicon micromachining technology which will be orders of magnitude smaller and lower power consumption than a conventional mass spectrometer. The sensing and discrimination of this gas sensor are based on an ionic mass spectrograph, using magnetic and/or electrostatic fields. The fields cause a spatial separation of the ions according to their respective mass-to-charge ratio. The fabrication of this device involves the combination of microelectronics with micromechanically built sensors and, ultimately, vacuum pumps. The prototype of a chemical sensormore » would revolutionize the method of performing environmental monitoring for both commercial and government applications. The portable unit decided upon was the miniaturized gas chromatograph with a mass spectrometer detector, referred to as a GC/MS in the analytical marketplace.« less

Integrated layout based Monte-Carlo simulation for design arc optimization

NASA Astrophysics Data System (ADS)

Shao, Dongbing; Clevenger, Larry; Zhuang, Lei; Liebmann, Lars; Wong, Robert; Culp, James

2016-03-01

Design rules are created considering a wafer fail mechanism with the relevant design levels under various design cases, and the values are set to cover the worst scenario. Because of the simplification and generalization, design rule hinders, rather than helps, dense device scaling. As an example, SRAM designs always need extensive ground rule waivers. Furthermore, dense design also often involves "design arc", a collection of design rules, the sum of which equals critical pitch defined by technology. In design arc, a single rule change can lead to chain reaction of other rule violations. In this talk we present a methodology using Layout Based Monte-Carlo Simulation (LBMCS) with integrated multiple ground rule checks. We apply this methodology on SRAM word line contact, and the result is a layout that has balanced wafer fail risks based on Process Assumptions (PAs). This work was performed at the IBM Microelectronics Div, Semiconductor Research and Development Center, Hopewell Junction, NY 12533

Adaptive Mesh Refinement for Microelectronic Device Design

NASA Technical Reports Server (NTRS)

Cwik, Tom; Lou, John; Norton, Charles

1999-01-01

Finite element and finite volume methods are used in a variety of design simulations when it is necessary to compute fields throughout regions that contain varying materials or geometry. Convergence of the simulation can be assessed by uniformly increasing the mesh density until an observable quantity stabilizes. Depending on the electrical size of the problem, uniform refinement of the mesh may be computationally infeasible due to memory limitations. Similarly, depending on the geometric complexity of the object being modeled, uniform refinement can be inefficient since regions that do not need refinement add to the computational expense. In either case, convergence to the correct (measured) solution is not guaranteed. Adaptive mesh refinement methods attempt to selectively refine the region of the mesh that is estimated to contain proportionally higher solution errors. The refinement may be obtained by decreasing the element size (h-refinement), by increasing the order of the element (p-refinement) or by a combination of the two (h-p refinement). A successful adaptive strategy refines the mesh to produce an accurate solution measured against the correct fields without undue computational expense. This is accomplished by the use of a) reliable a posteriori error estimates, b) hierarchal elements, and c) automatic adaptive mesh generation. Adaptive methods are also useful when problems with multi-scale field variations are encountered. These occur in active electronic devices that have thin doped layers and also when mixed physics is used in the calculation. The mesh needs to be fine at and near the thin layer to capture rapid field or charge variations, but can coarsen away from these layers where field variations smoothen and charge densities are uniform. This poster will present an adaptive mesh refinement package that runs on parallel computers and is applied to specific microelectronic device simulations. Passive sensors that operate in the infrared portion of the spectrum as well as active device simulations that model charge transport and Maxwell's equations will be presented.

Microelectronics and Special Education. CET/MEP Information Sheet.

ERIC Educational Resources Information Center

Council for Educational Technology, London (England).

Used as an additional aid by the teacher, microelectronics can assist mentally and physically handicapped children to meet educational objectives that have been specifically agreed upon for the individual child. Microelectronics can help deaf children develop speech production, communication skills, and grammar and sentence construction;…

Microelectronics and Music Education.

ERIC Educational Resources Information Center

Hofstetter, Fred T.

1979-01-01

This look at the impact of microelectronics on computer-assisted instruction (CAI) in music notes trends toward new applications and lower costs. Included are: a rationale for CAI in music, a list of sample programs, comparison of five microelectronic music systems, PLATO cost projections, and sources of further information. (SJL)

Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics.

PubMed

Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Jaung, Jae Yun; Kim, Yong-Hoon; Park, Sung Kyu

2015-09-28

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.

Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics

NASA Astrophysics Data System (ADS)

Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Yun Jaung, Jae; Kim, Yong-Hoon; Kyu Park, Sung

2015-09-01

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Bin; Wang, Xue -Peng; Shen, Zhen -Ju

Ge-Sb-Te alloys have been widely used in optical/electrical memory storage. Because of the extremely fast crystalline-amorphous transition, they are also expected to play a vital role in next generation nonvolatile microelectronic memory devices. However, the distribution and structural properties of vacancies have been one of the key issues in determining the speed of melting (or amorphization), phase-stability, and heat-dissipation of rock-salt GeSbTe, which is crucial for its technological breakthrough in memory devices. Using spherical aberration-aberration corrected scanning transmission electron microscopy and atomic scale energy-dispersive X-ray mapping, we observe a new rock-salt structure with high-degree vacancy ordering (or layered-like ordering) atmore » an elevated temperature, which is a result of phase transition from the rock-salt phase with randomly distributed vacancies. First-principles calculations reveal that the phase transition is an energetically favored process. Furthermore, molecular dynamics studies suggest that the melting of the cubic rock-salt phases is initiated at the vacancies, which propagate to nearby regions. The observation of multi-rock-salt phases suggests another route for multi-level data storage using GeSbTe.« less

The switching of strong spin wave beams in patterned garnet films.

PubMed

Gieniusz, R; Gruszecki, P; Krawczyk, M; Guzowska, U; Stognij, A; Maziewski, A

2017-08-18

The application of spin waves in communication with information encoded in amplitude and phase could replace or enhance existing microelectronic and microwave devices with significantly decreased energy consumption. Spin waves (SW) are usually transported in a magnetic material shaped to act as a waveguide. However, the implementation of SW transport and switching in plane homogeneous magnetic films and running as a narrow beam with a small divergence angle still present a challenge. We propose a realization of a strong SW switchers based on a patterned yttrium iron garnet (YIG) film that could serve as a magnonic fundamental building block. Our concept relies on the creation of a narrow beam of relatively short-wavelength SW by effect of a total non-reflection, found to be tied to refraction on the decreasing internal magnetic field, near a line of antidots at YIG. Nonreciprocal SW excitation by a microstrip antenna is used for controlling the direction of the signal flow. We demonstrate unique features of the propagation of microwave-excited SW beams, provide insight into their physics and discuss their potential applications in high-frequency devices.

Correction of absorption-edge artifacts in polychromatic X-ray tomography in a scanning electron microscope for 3D microelectronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Laloum, D., E-mail: david.laloum@cea.fr; CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9; STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles

2015-01-15

X-ray tomography is widely used in materials science. However, X-ray scanners are often based on polychromatic radiation that creates artifacts such as dark streaks. We show this artifact is not always due to beam hardening. It may appear when scanning samples with high-Z elements inside a low-Z matrix because of the high-Z element absorption edge: X-rays whose energy is above this edge are strongly absorbed, violating the exponential decay assumption for reconstruction algorithms and generating dark streaks. A method is proposed to limit the absorption edge effect and is applied on a microelectronic case to suppress dark streaks between interconnections.

Microelectronics in the Curriculum--The Science Teacher's Contribution.

ERIC Educational Resources Information Center

Association for Science Education, Cambridge (England).

Rapid advances in microelectronics over the past few years have generally been beneficial, but they have also created some problems, and questions must be asked about the philosophy for including aspects of the new technology in the school curriculum. This statement, prepared by the Microelectronics and Science Education Subcommittee of the…

Thermal Characterization of Nanostructures and Advanced Engineered Materials

NASA Astrophysics Data System (ADS)

Goyal, Vivek Kumar

Continuous downscaling of Si complementary metal-oxide semiconductor (CMOS) technology and progress in high-power electronics demand more efficient heat removal techniques to handle the increasing power density and rising temperature of hot spots. For this reason, it is important to investigate thermal properties of materials at nanometer scale and identify materials with the extremely large or extremely low thermal conductivity for applications as heat spreaders or heat insulators in the next generation of integrated circuits. The thin films used in microelectronic and photonic devices need to have high thermal conductivity in order to transfer the dissipated power to heat sinks more effectively. On the other hand, thermoelectric devices call for materials or structures with low thermal conductivity because the performance of thermoelectric devices is determined by the figure of merit Z=S2sigma/K, where S is the Seebeck coefficient, K and sigma are the thermal and electrical conductivity, respectively. Nanostructured superlattices can have drastically reduced thermal conductivity as compared to their bulk counterparts making them promising candidates for high-efficiency thermoelectric materials. Other applications calling for thin films with low thermal conductivity value are high-temperature coatings for engines. Thus, materials with both high thermal conductivity and low thermal conductivity are technologically important. The increasing temperature of the hot spots in state-of-the-art chips stimulates the search for innovative methods for heat removal. One promising approach is to incorporate materials, which have high thermal conductivity into the chip design. Two suitable candidates for such applications are diamond and graphene. Another approach is to integrate the high-efficiency thermoelectric elements for on-spot cooling. In addition, there is strong motivation for improved thermal interface materials (TIMs) for heat transfer from the heat-generating chip to heat-sinking units. This dissertation presents results of the experimental investigation and theoretical interpretation of thermal transport in the advanced engineered materials, which include thin films for thermal management of nanoscale devices, nanostructured superlattices as promising candidates for high-efficiency thermoelectric materials, and improved TIMs with graphene and metal particles as fillers providing enhanced thermal conductivity. The advanced engineered materials studied include chemical vapor deposition (CVD) grown ultrananocrystalline diamond (UNCD) and microcrystalline diamond (MCD) films on Si substrates, directly integrated nanocrystalline diamond (NCD) films on GaN, free-standing polycrystalline graphene (PCG) films, graphene oxide (GOx) films, and "pseudo-superlattices" of the mechanically exfoliated Bi2Te3 topological insulator films, and thermal interface materials (TIMs) with graphene fillers.

Laser ultrasonic characterization of membranes for use as micro-electronic mechanical systems (MEMS)

NASA Astrophysics Data System (ADS)

Edwards, R. S.; Zhou, L. Q.; Pearce, M. J.; Prince, R. G.; Colston, G.; Myronov, M.; Leadley, D. R.; Trushkevych, O.

2017-02-01

Germanium (Ge) on Silicon (Si) has the potential to produce a wide variety of devices, including sensors, solar cells and transistors. Modification of these materials so that a suspended membrane layer is formed, through removing regions of the Si substrate, offers the potential for sensors with a more rapid response and higher sensitivity. Such membranes are a very simple micro-electronic mechanical system (MEMS). It is essential to ensure that the membranes are robust against shock and vibration, with well-characterised resonant frequencies, prior to any practical application. We present work using laser interferometry to characterise the resonant modes of membranes produced from Ge or silicon carbide (SiC) on a Si substrate, with the membranes typically having around 1 mm lateral dimensions. Two dimensional scanning of the sample enables visualisation of each mode. The stress measured from the resonant frequencies agrees well with that calculated from the growth conditions. SiC provides a more robust platform for electronics, while Ge offers better resonant properties. This offers a potential technique for characterising production quality or lifetime testing for the MEMS produced.

Microactuateur electrothermique bistable: Etude d'implementation avec une technologie standard CMOS

NASA Astrophysics Data System (ADS)

Ressejac, Isabelle

The general objective of this Ph.D. thesis was to study the implementation of a new type of eletrothermal microactuator. This actuator presents the advantages to be bistable and fabricated in a standard CMOS process, allowing the integration of a microelectronics addressing circuit on the same substrate. Experimental research work, presented in this thesis, relate to the different steps carried out in order to implement this CMOS MEMS device: its theoretical conception, its fabrication with a standard CMOS technology, its micromachining as a post-process, its characterization and its electro-thermo-mechanical modeling. The device was designed and fabricated by using Mitel 1,5 mum CMOS technology and the Can-MEMS service which are both available via the Canadian Microelectronics Corporation. Fabricated monolithically within a standard CMOS process, our microactuator is suitable for large-scale integration due to its small dimensions (length ˜1000 mum and width ˜150 mum). It constitutes the basic component of a N by N matrix controlled by a microelectronic addressing system built on the same substrate. Initially, only one micromachining technique (involving TMAH) was used, and long etching times (>9 h) were requires} in order to release the microstructures. However, the passivation layer from the CMOS process could protect the underlying metal from the TMAH for a sufficient time (only ˜1--2 h). Consequently, we had to develop a micromachining strategy with shorter etching times to allow the complete release of the microstructures without damaging them. Post-processing begins with deposition (by sputtering) of a platinum layer intended to protect the abutment from subsequent etching. Our micromachining strategy is mainly based on the use of a hybrid etching process starting with a first anisotropic TMAH etching followed by a XeF2 isotropic etching. After micromachining, the released microactuator has a significant initial deflection with its tip reaching a height up to a hundred times higher than its thickness. This natural deflection results from the relaxation of internal stresses inside the thin films which are part of the microactuator. These internal stresses are intrinsics to the host CMOS process. We have developed a model of the microactuator's initial deflection using mechanical properties of thin films and dimensions of the structure. Actuation experiments were performed in order to characterize the deflection of the microactuator with respect to the heating of the bilayers (separately and together). We have developed a thermal actuation analytical model for an n-layers multimorph structure, which takes into account the initial deflection resulting from the relaxation of stresses as well as the deflection due to the temperature increase during the electrothermal activation of the bilayers. (Abstract shortened by UMI.)

Smart Materials for Electromagnetic and Optical Applications

NASA Astrophysics Data System (ADS)

Ramesh, Prashanth

The research presented in this dissertation focuses on the development of solid-state materials that have the ability to sense, act, think and communicate. Two broad classes of materials, namely ferroelectrics and wideband gap semiconductors were investigated for this purpose. Ferroelectrics possess coupled electromechanical behavior which makes them sensitive to mechanical strains and fluctuations in ambient temperature. Use of ferroelectrics in antenna structures, especially those subject to mechanical and thermal loads, requires knowledge of the phenomenological relationship between the ferroelectric properties of interest (especially dielectric permittivity) and the external physical variables, viz. electric field(s), mechanical strains and temperature. To this end, a phenomenological model of ferroelectric materials based on the Devonshire thermodynamic theory was developed. This model was then used to obtain a relationship expressing the dependence of the dielectric permittivity on the mechanical strain, applied electric field and ambient temperature. The relationship is shown to compare well with published experimental data and other related models in literature. A model relating ferroelectric loss tangent to the applied electric field and temperature is also discussed. Subsequently, relationships expressing the dependence of antenna operating frequency and radiation efficiency on those external physical quantities are described. These relationships demonstrate the tunability of load-bearing antenna structures that integrate ferroelectrics when they are subjected to mechanical and thermal loads. In order to address the inability of ferroelectrics to integrate microelectronic devices, a feature needed in a material capable of sensing, acting, thinking and communicating, the material Gallium Nitride (GaN) is pursued next. There is an increasing utilization of GaN in the area of microelectronics due to the advantages it offers over other semiconductors. This dissertation demonstrates GaN as a candidate material well suited for novel microelectromechanical systems. The potential of GaN for MEMS is demonstrated via the design, analysis, fabrication, testing and characterization of an optical microswitch device actuated by piezoelectric and electrostrictive means. The piezoelectric and electrostrictive properties of GaN and its differences from common piezoelectrics are discussed before elaborating on the device configuration used to implement the microswitch device. Next, the development of two recent fabrication technologies, Photoelectrochemical etch and Bias-enabled Dark Electrochemical etch, used to realize the 3-dimensional device structure in GaN are described in detail. Finally, an ultra-low-cost, laser-based, non-contact approach to test and characterize the microswitch device is described, followed by the device testing results.

High peak power solid-state laser for micromachining of hard materials

NASA Astrophysics Data System (ADS)

Herbst, Ludolf; Quitter, John P.; Ray, Gregory M.; Kuntze, Thomas; Wiessner, Alexander O.; Govorkov, Sergei V.; Heglin, Mike

2003-06-01

Laser micromachining has become a key enabling technology in the ever-continuing trend of miniaturization in microelectronics, micro-optics, and micromechanics. New applications have become commercially viable due to the emergence of innovative laser sources, such as diode pumped solid-state lasers (DPSSL), and the progress in processing technology. Examples of industrial applications are laser-drilled micro-injection nozzles for highly efficient automobile engines, or manufacturing of complex spinnerets for production of synthetic fibers. The unique advantages of laser-based techniques stem from their ability to produce high aspect ratio holes, while yielding low heat affected zones with exceptional surface quality, roundness and taper tolerances. Additionally, the ability to drill blind holes and slots in very hard materials such as diamond, silicon, sapphire, ceramics and steel is of great interest for many applications in microelectronics, semiconductor and automotive industry. This kind of high quality, high aspect ratio micromachining requires high peak power and short pulse durations.

Magnetotransport in magnetic nanostructures

NASA Astrophysics Data System (ADS)

Panchula, Alex F.

The unifying theme of this dissertation is the exploration of novel magnetic thin film materials to improve our understanding of spin-dependent transport in such materials, especially with regard to their use in the nascent field of spin based devices. Such devices, which rely on controlling the electron's spin rather than its charge as in conventional micro-electronics, may be important for applications in sensing, memory and computation. This dissertation covers research performed at the IBM Almaden Research Center between 2000 and 2003. One class of spin-based devices are magnetic tunnel junctions (MTJs), which display large changes in resistance in small magnetic fields. This tunneling magnetoresistance (TMR) is derived from changes in the relative alignment of the magnetic moments of thin ferromagnetic layers which are separated by thin insulating layers. The tunneling current spin polarization (TSP) determines the magnitude of the TMR. For typical transition-metal ferromagnets and their alloys the TSP is ˜50% although it is anticipated that half-metals should display nearly 100%. Confirming theoretical predictions, MTJs with electrodes of magnetite and a conventional ferromagnet such as a CoFe alloy, display an inverted TMR, consistent with negatively spin polarized magnetite electrodes. However, the magnitude of TSP of -48% at low temperatures, is not much larger than that exhibited by conventional 3d transition metal ferromagnets. At high temperatures, transport through the MTJ is dominated by tunneling across the alumina tunnel barrier, while at low temperatures the bulk properties of the magnetite dominates at low bias voltage. Another class of half-metals, the semi-heuslers exhibit low TSP, most likely due to surface disorder and, as revealed in this work, the possible formation of MnSb. The MnSb alloys studied in MTJs are found to behave as typical ferromagnets with a small positive TMR. Also considered are MTJs whose barriers are comprised of the wide band-gap semiconductors, ZnSe and Cr2O3. These low barrier height materials show typical tunneling behavior, although the TMR is lower than found for wide-gap insulators. Finally, the development of a high precision SQUID based voltmeter for application to low resistance devices with the current perpendicular to the plane of the materials is outlined.

Electrochemical investigations of advanced materials for microelectronic and energy storage devices

NASA Astrophysics Data System (ADS)

Goonetilleke, Pubudu Chaminda

A broad range of electrochemical techniques are employed in this work to study a selected set of advanced materials for applications in microelectronics and energy storage devices. The primary motivation of this study has been to explore the capabilities of certain modern electrochemical techniques in a number of emerging areas of material processing and characterization. The work includes both aqueous and non-aqueous systems, with applications in two rather general areas of technology, namely microelectronics and energy storage. The sub-systems selected for investigation are: (i) Electrochemical mechanical and chemical mechanical planarization (ECMP and CMP, respectively), (ii) Carbon nanotubes in combination with room temperature ionic liquids (ILs), and (iii) Cathode materials for high-performance Li ion batteries. The first group of systems represents an important building block in the fabrication of microelectronic devices. The second and third groups of systems are relevant for new energy storage technologies, and have generated immense interests in recent years. A common feature of these different systems is that they all are associated with complex surface reactions that dictate the performance of the devices based on them. Fundamental understanding of these reactions is crucial to further development and expansion of their associated technologies. It is the complex mechanistic details of these surface reactions that we address using a judicious combination of a number of state of the art electrochemical techniques. The main electrochemical techniques used in this work include: (i) Cyclic voltammetry (CV) and slow scan cyclic voltammetry (SSCV, a special case of CV); (ii) Galvanostatic (or current-controlled) measurements; (iii) Electrochemical impedance spectroscopy (EIS), based on two different methodologies, namely, Fourier transform EIS (FT-EIS, capable of studying fast reaction kinetics in a time-resolved mode), and EIS using frequency response analysis (employed to study slow reactions such as solid state diffusion of Li). The designs of both the experimental equipment and the control variables change for studying the different aqueous and non-aqueous systems. The protocols for data analysis also change depending on the systems. In addition, it often becomes necessary to combine different aspects of the different experimental methods to obtain the necessary information about the system(s) under study. The experimental strategies and the associated theoretical considerations for developing these strategies are discussed in appropriate contexts of this work. CNT electrodes in combination with IL electrolytes are potentially important for electrochemical super-capacitors. We have carried out electrochemical investigation of such a system involving a paper-electrode of multiwall CNT in the IL of 1-Ethyl-3-methyl imidazolium ethylsulfate (EMIM-EtSO4). Our study concentrated on the analytical aspects of cyclic voltammetry (CV) to probe the double layer capacitance of these relatively unconventional systems. (that involve rather large charge-discharge time constants). Both theoretical and experimental aspects of CV for such systems have been discussed, focusing in particular, on the effects of faradaic side-reactions, electrolyte resistance and voltage scan speeds. The results have been analyzed using an electrode equivalent circuit model, demonstrating a method to account for the typical artifacts expected in CV of CNT-IL interfaces. Chemical-mechanical planarization (CMP) of copper has now become an integral part of modern semiconductor fabrication technology. Recently, electrochemical-mechanical planarization (ECMP) has emerged as a possible extension of CMP, where through voltage-activated removal of Cu surface layers, one can substantially minimize the down-force necessary for mechanical polishing However, the detailed electrochemical factors that are central to designing efficient abrasive-free electrolytes for ECMP are not clearly understood at the present time. The present work has addressed this issue by studying the relative electrochemical effects of selected different chemical additives. Controlling the surface reactions (that is controlling the voltage-induced material removal) in ECMP requires a carefully designed combination of a number of electrochemical input variables (voltage activation program and electrolyte composition). We have studied the main experimental factors for designing these parameters, using triangular and rectangular-voltage-pulse modulated dissolution of Cu in electrolytes of different chemical compositions. Applications of rechargeable Li ion batteries have considerably expanded in recent years. As a result, research activities involving material-fabrication and characterization for these batteries also have expanded during this period. The importance of studying these specific materials lies in the fact that the cathode plays a major role in its contribution to the battery performance LiMn2O4 cathodes are being considered for next generation of Li ion batteries. The current work focuses on a specific problem commonly associated with Li cathode systems, namely surface film formation on the cathodes. LiMn2O4 cathodes tend to develop native surface films in carbonate electrolytes. By combining D.C. SSCV with A.C. EIS, we have studied how these films would react with an electrolyte of LiBF4 in ethylene and diethyl carbonates. We have demonstrated that such reactions could affect the measurement of the characteristic electrochemical parameters of the cathode, namely the intercalation capacitance, initial capacity-loss, coulometric titration profiles, and the solid state diffusion coefficient of Li+. A generalized framework for data analysis, based on the considerations of electrode equivalent circuits, has been used to combine the results of the D.C. and A.C. measurements.

Integrated electronics and fluidic MEMS for bioengineering

NASA Astrophysics Data System (ADS)

Fok, Ho Him Raymond

Microelectromechanical systems (MEMS) and microelectronics have become enabling technologies for many research areas. This dissertation presents the use of fluidic MEMS and microelectronics for bioengineering applications. In particular, the versatility of MEMS and microelectronics is highlighted by the presentation of two different applications, one for in-vitro study of nano-scale dynamics during cell division and one for in-vivo monitoring of biological activities at the cellular level. The first application of an integrated system discussed in this dissertation is to utilize fluidic MEMS for studying dynamics in the mitotic spindle, which could lead to better chemotherapeutic treatments for cancer patients. Previous work has developed the use of electrokinetic phenomena on the surface of a glass-based platform to assemble microtubules, the building blocks of mitotic spindles. Nevertheless, there are two important limitations of this type of platform. First, an unconventional microfabrication process is necessary for the glass-based platform, which limits the utility of this platform. In order to overcome this limitation, in this dissertation a convenient microfluidic system is fabricated using a negative photoresist called SU-8. The fabrication process for the SU-8-based system is compatible with other fabrication techniques used in developing microelectronics, and this compatibility is essential for integrating electronics for studying dynamics in the mitotic spindle. The second limitation of the previously-developed glass-based platform is its lack of bio-compatibility. For example, microtubules strongly interact with the surface of the glass-based platform, thereby hindering the study of dynamics in the mitotic spindle. This dissertation presents a novel approach for assembling microtubules away from the surface of the platform, and a fabrication process is developed to assemble microtubules between two self-aligned thin film electrodes on thick SU-8 pedestals. This approach also allows the in-vitro model to mimic the three-dimensionality of the cellular mitotic spindle that is absent in previous work. The second application of an integrated bioengineering system discussed in this dissertation is to design and fabricate active electronics and sensors for an in-vivo application to monitor neural activity at the cellular level. Temperature sensors were chosen for a first demonstration. In order for temperature sensors to be able to be implanted into brain interfaces, it is necessary for these devices to be fabricated using processes that are compatible with bio-compatible substrates such as glass and plastic. This dissertation addresses this challenge by developing temperature sensors integrated with biasing circuitry using zinc oxide thin film transistors (TFTs) fabricated on polyimide substrates. The integrated sensors show good temperature sensitivity, which is critical for monitoring neural temperature at the cellular level. This dissertation also describes the unique requirements of encapsulating implantable electronics. For instance, encapsulation schemes must be designed in such a way that they both protect electronic devices from extracellular fluids and also do not interfere with the functionality of these devices. In this work, SU-8 is used as a convenient and effective encapsulation layer. Thermal engineering to prevent active electronics from overheating and to ensure accurate temperature measurement from temperature sensors is also discussed, and a synergistic encapsulation and thermal engineering combination is presented.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Ying; Li, Hong; Bridges, Denzel

We report that the continuing miniaturization of microelectronics is pushing advanced manufacturing into nanomanufacturing. Nanojoining is a bottom-up assembly technique that enables functional nanodevice fabrication with dissimilar nanoscopic building blocks and/or molecular components. Various conventional joining techniques have been modified and re-invented for joining nanomaterials. Our review surveys recent progress in nanojoining methods, as compared to conventional joining processes. Examples of nanojoining are given and classified by the dimensionality of the joining materials. At each classification, nanojoining is reviewed and discussed according to materials specialties, low dimensional processing features, energy input mechanisms and potential applications. The preparation of new intermetallicmore » materials by reactive nanoscale multilayer foils based on self-propagating high-temperature synthesis is highlighted. This review will provide insight into nanojoining fundamentals and innovative applications in power electronics packaging, plasmonic devices, nanosoldering for printable electronics, 3D printing and space manufacturing.« less

From Playroom to Lab: Tough Stretchable Electronics Analyzed with a Tabletop Tensile Tester Made from Toy‐Bricks

PubMed Central

Kettlgruber, Gerald; Siket, Christian M.; Drack, Michael; Graz, Ingrid M.; Cakmak, Umut; Major, Zoltan; Kaltenbrunner, Martin; Bauer, Siegfried

2016-01-01

Toy bricks are an ideal platform for the cost‐effective rapid prototyping of a tabletop tensile tester with measurement accuracy on par with expensive, commercially available laboratory equipment. Here, a tester is presented that is not only a versatile demonstration device in mechanics, electronics, and physics education and an eye‐catcher on exhibitions, but also a powerful tool for stretchable electronics research. Following the “open‐source movement” the build‐up of the tester is described and all the details for easy reproduction are disclosed. A a new design of highly conformable all‐elastomer based graded rigid island printed circuit boards is developed. Tough bonded to this elastomer substrate are imperceptible electronic foils bearing conductors and off‐the‐shelf microelectronics, paving the way for next generation smart electronic appliances. PMID:27588259

Highly sensitive simple homodyne phase detector for ultrasonic pulse-echo measurements

DOE PAGES

Grossman, John; Suslov, Alexey V.; Yong, Grace; ...

2016-04-07

Progress in microelectronic technology has allowed us to design and develop a simple but, professional quality instrument for ultrasonic pulse-echo probing of the elastic properties of materials. The heart of this interfer- ometer lies in the AD8302 microchip, a gain and phase detector from Analog Devices, Inc. The interferometer was tested by measuring the temperature dependences of the ultrasound speed and attenuation in a ferro- electric KTa 0.92 Nb 0.08O 3 (KTN) crystal at a frequency of about 40 MHz. These tests demonstrated that our instrument is capable of detecting the relative changes in the sound speed v on themore » level of Δv/v ~ 10 –7. In addition, the ultrasound attenuation revealed new features in the development of the low-temperature structure of the ferroelectric KTN crystal.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jaekyun; Kim, Myung -Gil; Kim, Jaehyun

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. Inmore » this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. As a result, the successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.« less

Glass-to-Metal Seal Quality.

DTIC Science & Technology

1982-05-01

SELECTION AND EVALUATION . . . . . . . . . . . . . . 2 2.2 MICROELECTRONIC PACKAGES AND THEIR QUALITY . . . * . . . . . . . . 5 2.3 EQUIPMENT...liquid penetrant testing for various microelectronic package hermeticity. I t I MATERIALS AND EQUIPMENT 2.1 DYE PENETRANT SELECTION AND EVALUATION...a commercial visible dye penetrant and a commercial fluorescent dye penetrant were selected as being suitable for the testing of microelectronic

Some metal oxides and their applications for creation of Microsystems (MEMS) and Energy Harvesting Devices (EHD)

NASA Astrophysics Data System (ADS)

Denishev, K.

2016-10-01

This is a review of a part of the work of the Technological Design Group at Technical University of Sofia, Faculty of Electronic Engineering and Technologies, Department of Microelectronics. It is dealing with piezoelectric polymer materials and their application in different microsystems (MEMS) and Energy Harvesting Devices (EHD), some organic materials and their applications in organic (OLED) displays, some transparent conductive materials etc. The metal oxides Lead Zirconium Titanate (PZT) and Zinc Oxide (ZnO) are used as piezoelectric layers - driving part of different sensors, actuators and EHD. These materials are studied in term of their performance in dependence on the deposition conditions and parameters. They were deposited as thin films by using RF Sputtering System. As technological substrates, glass plates and Polyethylenetherephtalate (PET) foils were used. For characterization of the materials, a test structure, based on Surface Acoustic Waves (SAW), was designed and prepared. The layers were characterized by Fourier Transform Infrared spectroscopy (FTIR). The piezoelectric response was tested at variety of mechanical loads (tensile strain, stress) in static and dynamic (multiple bending) mode. The single-layered and double-layered structures were prepared for piezoelectric efficiency increase. A structure of piezoelectric energy transformer is proposed and investigated.

Epoxy bond and stop etch fabrication method

DOEpatents

Simmons, Jerry A.; Weckwerth, Mark V.; Baca, Wes E.

2000-01-01

A class of epoxy bond and stop etch (EBASE) microelectronic fabrication techniques is disclosed. The essence of such techniques is to grow circuit components on top of a stop etch layer grown on a first substrate. The first substrate and a host substrate are then bonded together so that the circuit components are attached to the host substrate by the bonding agent. The first substrate is then removed, e.g., by a chemical or physical etching process to which the stop etch layer is resistant. EBASE fabrication methods allow access to regions of a device structure which are usually blocked by the presence of a substrate, and are of particular utility in the fabrication of ultrafast electronic and optoelectronic devices and circuits.

Properties of zirconium silicate and zirconium-silicon oxynitride high-k dielectric alloys for advanced microelectronic applications: Chemical and electrical characterizations

NASA Astrophysics Data System (ADS)

Ju, Byongsun

2005-11-01

As the microelectronic devices are aggressively scaled down to the 1999 International Technology Roadmap, the advanced complementary metal oxide semiconductor (CMOS) is required to increase packing density of ultra-large scale integrated circuits (ULSI). High-k alternative dielectrics can provide the required levels of EOT for device scaling at larger physical thickness, thereby providing a materials pathway for reducing the tunneling current. Zr silicates and its end members (SiO2 and ZrO2) and Zr-Si oxynitride films, (ZrO2)x(Si3N 4)y(SiO2)z, have been deposited using a remote plasma-enhanced chemical vapor deposition (RPECVD) system. After deposition of Zr silicate, the films were exposed to He/N2 plasma to incorporate nitrogen atoms into the surface of films. The amount of incorporated nitrogen atoms was measured by on-line Auger electron spectrometry (AES) as a function of silicate composition and showed its local minimum around the 30% silicate. The effect of nitrogen atoms on capacitance-voltage (C-V) and leakage-voltage (J-V) were also investigated by fabricating metal-oxide-semiconductor (MOS) capacitors. Results suggested that incorporating nitrogen into silicate decreased the leakage current in SiO2-rich silicate, whereas the leakage increased in the middle range of silicate. Zr-Si oxynitride was a pseudo-ternary alloy and no phase separation was detected by x-ray photoelectron spectroscopy (XPS) analysis up to 1100°C annealing. The leakage current of Zr-Si oxynitride films showed two different temperature dependent activation energies, 0.02 eV for low temperature and 0.3 eV for high temperature. Poole-Frenkel emission was the dominant leakage mechanism. Zr silicate alloys with no Si3N4 phase were chemically separated into the SiO2 and ZrO2 phase as annealed above 900°C. While chemical phase separation in Zr silicate films with Si 3N4 phase (Zr-Si oxynitride) were suppressed as increasing the amount of Si3N4 phase due to the narrow bonding network m Si3N4 phase. (3.4 bonds/atom for Si3 N4 network, 2.67 bonds/atom for SiO2 network).

Anisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substrates

NASA Astrophysics Data System (ADS)

Guo, W.; Mols, Y.; Belz, J.; Beyer, A.; Volz, K.; Schulze, A.; Langer, R.; Kunert, B.

2017-07-01

Selective area growth of InGaAs inside highly confined trenches on a pre-patterned (001) Si substrate has the potential of achieving a high III-V crystal quality due to high aspect ratio trapping for improved device functionalities in Si microelectronics. If the trench width is in the range of the hetero-layer thickness, the relaxation mechanism of the mismatched III-V layer is no longer isotropic, which has a strong impact on the device fabrication and performance if not controlled well. The hetero-epitaxial nucleation of InxGa1-xAs on Si can be simplified by using a binary nucleation buffer such as GaAs. A pronounced anisotropy in strain release was observed for the growth of InxGa1-xAs on a fully relaxed GaAs buffer with a (001) surface inside 20 and 100 nm wide trenches, exploring the full composition range from GaAs to InAs. Perpendicular to the trench orientation (direction of high confinement), the strain release in InxGa1-xAs is very efficiently caused by elastic relaxation without defect formation, although a small compressive force is still induced by the trench side walls. In contrast, the strain release along the trenches is governed by plastic relaxation once the vertical film thickness has clearly exceeded the critical layer thickness. On the other hand, the monolithic deposition of mismatched InxGa1-xAs directly into a V-shaped trench bottom with {111} Si planes leads instantly to a pronounced nucleation of misfit dislocations along the {111} Si/III-V interfaces. In this case, elastic relaxation no longer plays a role as the strain release is ensured by plastic relaxation in both directions. Hence, using a ternary seed layer facilitates the integration of InxGa1-xAs covering the full composition range.

Using electron-tunneling refrigerators to cool electrons, membranes, and sensors

NASA Astrophysics Data System (ADS)

Miller, Nathan A.

Many cryogenic devices require temperatures near 100 mK for optimal performance, such as thin-film, superconducting detectors. Examples include the submillimeter SCUBA camera on the James Clerk Maxwell Telescope, high-resolution X-ray sensors for semiconductor defect analysis, and a planned satellite to search for polarization in the cosmic microwave background. The cost, size, and complexity of refrigerators used to reach 100 mK (dilution and adiabatic demagnetization refrigerators) are significant and alternative technologies are desirable. We demonstrate work on developing a new option for cooling detectors to 100 mK bath temperatures. Solid-state refrigerators based on Normal metal/Insulator/Superconductor (NIS) tunnel junctions can provide cooling from pumped 3He bath temperatures (˜300 mK) to 100 mK. The cooling mechanism is the preferential tunneling of the highest energy (hottest) electrons from the normal metal through the biased tunnel junctions into the superconductor. When NIS refrigerators are combined with a micro-machined membrane, both the electrons and phonons of the membrane can be cooled. We have developed NIS-cooled membranes with both large temperature reductions and large cooling powers. We have shown the first cooling of a bulk material by cooling a neutron transmutation doped (NTD) thermistor. The fabrication of NIS refrigerators can be integrated with existing detector technology. For the first time, we have successfully integrated NIS refrigerators with both mm-wave and X-ray detectors. In particular, we have cooled X-ray detectors by more than 100 mK and have achieved a resolution of <10 eV at 6 keV at a bath temperature 85 mK above the transition temperature of the detector. The use of integrated NIS refrigerators makes the remarkable performance of cryogenic detectors available from 300 mK platforms. We have also performed preliminary work towards building a general-purpose cooling platform for microelectronics devices on separate chips.

Laser microjoining of dissimilar and biocompatible materials

NASA Astrophysics Data System (ADS)

Bauer, Ingo; Russek, Ulrich A.; Herfurth, Hans J.; Witte, Reiner; Heinemann, Stefan; Newaz, Golam; Mian, A.; Georgiev, D.; Auner, Gregory W.

2004-07-01

Micro-joining and hermetic sealing of dissimilar and biocompatible materials is a critical issue for a broad spectrum of products such as micro-electronics, micro-optical and biomedical products and devices. Today, biocompatible titanium is widely applied as a material for orthopedic implants as well as for the encapsulation of implantable devices such as pacemakers, defibrillators, and neural stimulator devices. Laser joining is the process of choice to hermetically seal such devices. Laser joining is a contact-free process, therefore minimizing mechanical load on the parts to be joined and the controlled heat input decreases the potential for thermal damage to the highly sensitive components. Laser joining also offers flexibility, shorter processing time and higher quality. However, novel biomedical products, in particular implantable microsystems currently under development, pose new challenges to the assembly and packaging process based on the higher level of integration, the small size of the device's features, and the type of materials and material combinations. In addition to metals, devices will also include glass, ceramic and polymers as biocompatible building materials that must be reliably joined in similar and dissimilar combinations. Since adhesives often lack long-term stability or do not meet biocompatibility requirements, new joining techniques are needed to address these joining challenges. Localized laser joining provides promising developments in this area. This paper describes the latest achievements in micro-joining of metallic and non-metallic materials with laser radiation. The focus is on material combinations of metal-polymer, polymer-glass, metal-glass and metal-ceramic using CO2, Nd:YAG and diode laser radiation. The potential for applications in the biomedical sector will be demonstrated.

Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations

NASA Astrophysics Data System (ADS)

Chambonneau, Maxime; Souiki-Figuigui, Sarra; Chiquet, Philippe; Della Marca, Vincenzo; Postel-Pellerin, Jérémy; Canet, Pierre; Portal, Jean-Michel; Grojo, David

2017-04-01

We demonstrate that infrared femtosecond laser pulses with intensity above the two-photon ionization threshold of crystalline silicon induce charge transport through the tunnel oxide in floating gate Metal-Oxide-Semiconductor transistor devices. With repeated irradiations of Flash memory cells, we show how the laser-produced free-electrons naturally redistribute on both sides of the tunnel oxide until the electric field of the transistor is suppressed. This ability enables us to determine in a nondestructive, rapid and contactless way the flat band and the neutral threshold voltages of the tested device. The physical mechanisms including nonlinear ionization, quantum tunneling of free-carriers, and flattening of the band diagram are discussed for interpreting the experiments. The possibility to control the carriers in memory transistors with ultrashort pulses holds promises for fast and remote device analyses (reliability, security, and defectivity) and for considerable developments in the growing field of ultrafast microelectronics.

Hybrid electro-optical nanosystem for neurons investigation

NASA Astrophysics Data System (ADS)

Miu, Mihaela; Kleps, Irina; Craciunoiu, Florea; Simion, Monica; Bragaru, Adina; Ignat, Teodora

2010-11-01

The scope of this paper is development of a new laboratory-on-a-chip (LOC) device for biomedical studies consisting of a microfluidic system coupled to microelectronic/optical transducers with nanometric features, commonly called biosensors. The proposed device is a hybrid system with sensing element on silicon (Si) chip and microfluidic system on polydimethylsiloxane (PDMS) substrates, taking into accounts their particular advantages. Different types of nanoelectrode arrays, positioned in the reactor, have been investigated as sensitive elements for electrical detection and the recording of neuron extracellular electric activity has been monitorized in parallel with whole-cell patch-clamp membrane current. Moreover, using an additional porosification process the sensing element became efficient for optical detection also. The preliminary test results demonstrate the functionality of the proposed design and also the fabrication technology, the devices bringing advantages in terms enhancement of sensitivity in both optoelectronic detection schemes.

Microelectronics bioinstrumentation systems

NASA Technical Reports Server (NTRS)

Ko, W. H.

1977-01-01

Microelectronic bioinstrumentation systems to be employed in the Cardiovascular Deconditioning Program were developed. Implantable telemetry systems for long-term monitoring of animals on earth were designed to collect physiological data necessary for the understanding of the mechanisms of cardiovascular deconditioning. In-flight instrumentation systems, microelectronic instruments, and RF powering techniques for other life science experiments in the NASA program were studied.

Relevance of microelectronic education to industrial needs

NASA Technical Reports Server (NTRS)

Prince, J. L.; Lathrop, J. W.

1977-01-01

The relevance of microelectronic education to industrial needs was evaluated, and four categories were surveyed: (1) facts and rules; (2) skills; (3) personality; and (4) deductive-inductive reasoning. Examples of specific items in each category are given to illustrate their meaning and it was indicated as to which items in each category are strongly impacted by microelectronics courses and laboratories.

A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

NASA Astrophysics Data System (ADS)

Jovanović, B.; Brum, R. M.; Torres, L.

2014-04-01

After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption.

QWIP status and future trends at Thales

NASA Astrophysics Data System (ADS)

Bois, P.; Guériaux, V.; Briere de l'Isle, N.; Manissadjian, A.; Facoetti, H.; Marcadet, X.; Costard, E.; Nedelcu, A.

2012-01-01

Since 2005, Thales is successfully manufacturing QWIPs in high rate production through III-V Lab. All the early claimed advantages of QWIPs are now demonstrated. The versatility of the band-gap engineering allows the custom design of detectors to fulfill specific application requirements in MWIR, LWIR or VLWIR ranges. The maturity of the III-V microelectronics based on GaAs substrates gives uniformity, stability and high production rate. In this presentation we will discuss the specific advantages of this type of detector. An overview of the available performances and production status will be presented including under-development products such as dual band and polarimetric sensors.

The Application of Whole Cell-Based Biosensors for Use in Environmental Analysis and in Medical Diagnostics

PubMed Central

Gui, Qingyuan; Lawson, Tom; Shan, Suyan; Yan, Lu; Liu, Yong

2017-01-01

Various whole cell-based biosensors have been reported in the literature for the last 20 years and these reports have shown great potential for their use in the areas of pollution detection in environmental and in biomedical diagnostics. Unlike other reviews of this growing field, this mini-review argues that: (1) the selection of reporter genes and their regulatory proteins are directly linked to the performance of celllular biosensors; (2) broad enhancements in microelectronics and information technologies have also led to improvements in the performance of these sensors; (3) their future potential is most apparent in their use in the areas of medical diagnostics and in environmental monitoring; and (4) currently the most promising work is focused on the better integration of cellular sensors with nano and micro scaled integrated chips. With better integration it may become practical to see these cells used as (5) real-time portable devices for diagnostics at the bedside and for remote environmental toxin detection and this in situ application will make the technology commonplace and thus as unremarkable as other ubiquitous technologies. PMID:28703749

Radiation Effects and Hardening Techniques for Spacecraft Microelectronics

NASA Astrophysics Data System (ADS)

Gambles, J. W.; Maki, G. K.

2002-01-01

The natural radiation from the Van Allen belts, solar flares, and cosmic rays found outside of the protection of the earth's atmosphere can produce deleterious effects on microelectronics used in space systems. Historically civil space agencies and the commercial satellite industry have been able to utilize components produced in special radiation hardened fabrication process foundries that were developed during the 1970s and 1980s under sponsorship of the Departments of Defense (DoD) and Energy (DoE). In the post--cold war world the DoD and DoE push to advance the rad--hard processes has waned. Today the available rad--hard components lag two-plus technology node generations behind state- of-the-art commercial technologies. As a result space craft designers face a large performance gap when trying to utilize available rad--hard components. Compounding the performance gap problems, rad--hard components are becoming increasingly harder to get. Faced with the economic pitfalls associated with low demand versus the ever increasing investment required for integrated circuit manufacturing equipment most sources of rad--hard parts have simply exited this market in recent years, leaving only two domestic US suppliers of digital rad--hard components. This paper summarizes the radiation induced mechanisms that can cause digital microelectronics to fail in space, techniques that can be applied to mitigate these failure mechanisms, and ground based testing used to validate radiation hardness/tolerance. The radiation hardening techniques can be broken down into two classes, Hardness By Process (HBP) and Hardness By Design (HBD). Fortunately many HBD techniques can be applied to commercial fabrication processes providing space craft designer with radiation tolerant Application Specific Integrated Circuits (ASICs) that can bridge the performance gap between the special HBP foundries and the commercial state-of-the-art performance.

Retinal Implants for Blind Patients

NASA Astrophysics Data System (ADS)

Rothermel, Albrecht

Recently, very promising results have been obtained in clinical trials with eye-prostheses for the blind. There is a chance that advances in surgical techniques, microelectronics design, and material science may lead to the first really useful applications of retinal implants in the near future. This chapter will focus on the actual status of subretinal surgery and implant technologies. Opportunities and limitations of the different technologies will be discussed in terms of patients benefit and technological challenges. Finally, a vision on how the devices may work and look like in the future will be given.

MOEMs devices for future astronomical instrumentation in space

NASA Astrophysics Data System (ADS)

Zamkotsian, Frédéric; Liotard, Arnaud; Lanzoni, Patrick; ElHadi, Kacem; Waldis, Severin; Noell, Wilfried; de Rooij, Nico; Conedera, Veronique; Fabre, Norbert; Muratet, Sylvaine; Camon, Henri

2017-11-01

Based on the micro-electronics fabrication process, Micro-Opto-Electro-Mechanical Systems (MOEMS) are under study in order to be integrated in next-generation astronomical instruments for ground-based and space telescopes. Their main advantages are their compactness, scalability, specific task customization using elementary building blocks, and remote control. At Laboratoire d'Astrophysique de Marseille, we are engaged since several years in the design, realization and characterization of programmable slit masks for multi-object spectroscopy and micro-deformable mirrors for wavefront correction. First prototypes have been developed and show results matching with the requirements.

Polycrystalline silicon thin-film transistors on quartz fiber

NASA Astrophysics Data System (ADS)

Sugawara, Yuta; Uraoka, Yukiharu; Yano, Hiroshi; Hatayama, Tomoaki; Fuyuki, Takashi; Nakamura, Toshihiro; Toda, Sadayuki; Koaizawa, Hisashi; Mimura, Akio; Suzuki, Kenkichi

2007-11-01

We demonstrate the fabrication of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) on a thin quartz fiber for the first time. The poly-Si used in the active layer of the TFTs was prepared by excimer laser annealing of an amorphous Si thin film deposited on the fiber. Top-gated TFTs were fabricated on the fiber, and a field effect mobility of 10cm2/Vs was obtained. The proposed TFTs on a thin quartz fiber, named fiber TFTs, have potential application in microelectronic devices using TFTs fabricated on one-dimensional substrates.

Micro-Scale Avionics Thermal Management

NASA Technical Reports Server (NTRS)

Moran, Matthew E.

2001-01-01

Trends in the thermal management of avionics and commercial ground-based microelectronics are converging, and facing the same dilemma: a shortfall in technology to meet near-term maximum junction temperature and package power projections. Micro-scale devices hold the key to significant advances in thermal management, particularly micro-refrigerators/coolers that can drive cooling temperatures below ambient. A microelectromechanical system (MEMS) Stirling cooler is currently under development at the NASA Glenn Research Center to meet this challenge with predicted efficiencies that are an order of magnitude better than current and future thermoelectric coolers.

Heavy Ion Testing at the Galactic Cosmic Ray Energy Peak

NASA Technical Reports Server (NTRS)

Pellish, Jonathan A.; Xapsos, Michael A.; LaBel, Kenneth A.; Marshall, Paul W.; Heidel, David F.; Rodbell, Kennth P.; Hakey, Mark C.; Dodd, Paul E.; Shanneyfelt, Marty R.; Schwank, James R.;

Design and fabrication of zeolite macro- and micromembranes

NASA Astrophysics Data System (ADS)

Chau, Lik Hang Joseph

2001-07-01

The chemical nature of the support surface influences zeolite nucleation, crystal growth and elm adhesion. It had been demonstrated that chemical modification of support surface can significantly alter the zeolite film and has a good potential for large-scale applications for zeolite membrane production. The incorporation of titanium and vanadium metal ions into the structural framework of MFI zeolite imparts the material with catalytic properties. The effects of silica and metal (i.e., Ti and V) content, template concentration and temperature on the zeolite membrane growth and morphology were investigated. Single-gas permeation experiments were conducted for noble gases (He and Ar), inorganic gases (H2, N2, SF6) and hydrocarbons (methane, n-C4, i-C4) to determine the separation performance of these membranes. Using a new fabrication method based on microelectronic fabrication and zeolite thin film technologies, complex microchannel geometry and network (<5 mum), as well as zeolite arrays (<10 mum) were successfully fabricated onto highly orientated supported zeolite films. The zeolite micropatterns were stable even after repeated thermal cycling between 303 K and 873 K for prolonged periods of time. This work also demonstrates that zeolites (i.e., Sil-1, ZSM-5 and TS-1) can be employed as catalyst, membrane or structural materials in miniature chemical devices. Traditional semiconductor fabrication technology was employed in micromachining the device architecture. Four strategies for the manufacture of zeolite catalytic microreactors were discussed: zeolite powder coating, uniform zeolite film growth, localized zeolite growth, and etching of zeolite-silicon composite film growth inhibitors. Silicalite-1 was also prepared as free-standing membrane for zeolite membrane microseparators.

Miniature High-Let Radiation Spectrometer for Space and Avionics Applications

NASA Technical Reports Server (NTRS)

Stassinopoulos, E. G.; Stauffer, Craig A.; Brucker, G. J.

1998-01-01

This paper reports on the design and characterization of a small, low power, and low weight instrument, a High-LET Radiation Spectrometer (HiLRS), that measures energy deposited by heavy ions in microelectronic devices. The HILRS operates on pulse-height analysis principles and is designed for space and avionics applications. The detector component in the instrument is based on large scale arrays of p-n junctions. In this system, the pulse amplitude from a particle hit is directly proportional to the particle LET. A prototype flight unit has been fabricated and calibrated using several heavy ions with varying LETs and protons with several energies. The unit has been delivered to the Ballistic Missile Defense Organization (BMDO) c/o the Air Force Research Laboratory in Albuquerque, NM, for integration into the military Space Technology Research Vehicle (STRV), a US-UK cooperative mission. Another version of HILRS is being prepared for delivery in April to the Hubble Space Telescope (HST) project, to fly on the HST Orbital Systems Test (HOST) Platform on a shuttle mission.

Couches minces supraconductrices à haute température critique pour l'électronique

NASA Astrophysics Data System (ADS)

Guilloux-Viry, M.; Perrin, A.

1998-08-01

High critical temperature superconductors (HTCS) are very promising for applications in microelectronics due to the control of high quality epitaxial thin films, in spite of a number of specific constraints. Active and passive devices are already available in various laboratories, prooving that applications are actually expected soon. We report here on the interest of HTCS thin films, on preparation processes including materials and substrates choice, and also on characterization methods which are required in order to chek the quality of the samples. Finally some illustrative examples of applications are presented. Les supraconducteurs à haute température critique ouvrent des perspectives prometteuses dans le domaine de l'électronique en raison de la maîtrise de la croissance de films minces de haute qualité cristalline et physique, malgré des difficultés spécifiques. Des dispositifs, aussi bien actifs que passifs, commencent à être réalisés dans divers laboratoires, montrant que des applications peuvent être effectivement envisagées à relativement court terme.

Electric-field-controlled ferromagnetism in high-Curie-temperature Mn0.05Ge0.95 quantum dots.

PubMed

Xiu, Faxian; Wang, Yong; Kim, Jiyoung; Hong, Augustin; Tang, Jianshi; Jacob, Ajey P; Zou, Jin; Wang, Kang L

2010-04-01

Electric-field manipulation of ferromagnetism has the potential for developing a new generation of electric devices to resolve the power consumption and variability issues in today's microelectronics industry. Among various dilute magnetic semiconductors (DMSs), group IV elements such as Si and Ge are the ideal material candidates because of their excellent compatibility with the conventional complementary metal-oxide-semiconductor (MOS) technology. Here we report, for the first time, the successful synthesis of self-assembled dilute magnetic Mn(0.05)Ge(0.95) quantum dots with ferromagnetic order above room temperature, and the demonstration of electric-field control of ferromagnetism in MOS ferromagnetic capacitors up to 100 K. We found that by applying electric fields to a MOS gate structure, the ferromagnetism of the channel layer can be effectively modulated through the change of hole concentration inside the quantum dots. Our results are fundamentally important in the understanding and to the realization of high-efficiency Ge-based spin field-effect transistors.

The Impact on Space Radiation Requirements and Effects on ASIMS

NASA Technical Reports Server (NTRS)

Barnes, C.; Johnston, A.; Swift, G.

1995-01-01

The evolution of highly miniaturized electronic and mechanical systems will be accompanied by new problems and issues regarding the radiation response of these systems in the space environment. In this paper we discuss some of the more prominent radiation problems brought about by miniaturization. For example, autonomous micro-spacecraft will require large amounts of high density memory, most likely in the form of stacked, multichip modules of DRAM's, that must tolerate the radiation environment. However, advanced DRAM's (16 to 256 Mbit) are quite susceptible to radiation, particularly single event effects, and even exhibit new radiation phenomena that were not a problem for older, less dense memory chips. Another important trend in micro-spacecraft electronics is toward the use of low-voltage microelectronic systems that consume less power. However, the reduction in operating voltage also caries with it an increased susceptibility to radiation. In the case of application specific integrated microcircuits (ASIM's), advanced devices of this type, such as high density field programmable gate arrays (FPGA's) exhibit new single event effects (SEE), such as single particle reprogramming of anti-fuse links. New advanced bipolar circuits have been shown recently to degrade more rapidly in the low dose rate space environment than in the typical laboratory total dose radiation test used to qualify such devices. Thus total dose testing of these parts is no longer an appropriately conservative measure to be used for hardness assurance. We also note that the functionality of micromechanical Si-based devices may be altered due to the radiation-induced deposition of charge in the oxide passivation layers.

High-contrast gratings for long-wavelength laser integration on silicon

NASA Astrophysics Data System (ADS)

Sciancalepore, Corrado; Descos, Antoine; Bordel, Damien; Duprez, Hélène; Letartre, Xavier; Menezo, Sylvie; Ben Bakir, Badhise

2014-02-01

Silicon photonics is increasingly considered as the most promising way-out to the relentless growth of data traffic in today's telecommunications infrastructures, driving an increase in transmission rates and computing capabilities. This is in fact challenging the intrinsic limit of copper-based, short-reach interconnects and microelectronic circuits in data centers and server architectures to offer enough modulation bandwidth at reasonable power dissipation. In the context of the heterogeneous integration of III-V direct-bandgap materials on silicon, optics with high-contrast metastructures enables the efficient implementation of optical functions such as laser feedback, input/output (I/O) to active/passive components, and optical filtering, while heterogeneous integration of III-V layers provides sufficient optical gain, resulting in silicon-integrated laser sources. The latest ensure reduced packaging costs and reduced footprint for the optical transceivers, a key point for the short reach communications. The invited talk will introduce the audience to the latest breakthroughs concerning the use of high-contrast gratings (HCGs) for the integration of III-V-on-Si verticalcavity surface-emitting lasers (VCSELs) as well as Fabry-Perot edge-emitters (EELs) in the main telecom band around 1.55 μm. The strong near-field mode overlap within HCG mirrors can be exploited to implement unique optical functions such as dense wavelength division multiplexing (DWDM): a 16-λ100-GHz-spaced channels VCSEL array is demonstrated. On the other hand, high fabrication yields obtained via molecular wafer bonding of III-V alloys on silicon-on-insulator (SOI) conjugate excellent device performances with cost-effective high-throughput production, supporting industrial needs for a rapid research-to-market transfer.

Towards tunable and multifunctional interfaces: Multicomponent amorphous alloys and bilayer stacks

NASA Astrophysics Data System (ADS)

Kast, Matthew G.

Controlling the electronic structure and requisite charge transfer at and across interfaces is a grand challenge of materials science. Despite decades of research and numerous successes in the fields microelectronics and photovoltaics much work remains to be done. In many applications, whether they be in microelectronics, photovoltaics or display technology there is a demand for multiple functions at a single interface. Historically, existent materials were either discarded as an option due to known properties or tested with some application based figure of merit in mind. Following this, the quality of the material and/or the preparation of the surface/interface to which the material would be deposited was optimized. As the microelectronics and photovoltaics industries have matured, continued progress (faster, lower power transistors and more efficient, cheaper, abundant solar cells) will require new materials (possibly not previously existent) that are fundamentally better for their application than their highly optimized existent counter parts. The manifestation of this has been seen in the microelectronics field with introduction of hafnium silicates to replace silica (which had previously been monumentally successful) as the gate dielectrics for the most advanced transistors. Continued progress in efficient, cheap, abundant photovoltaics will require similar advances. Advances will be needed in the area of new abundant absorbers that can be deposited cheaply which result in materials with high efficiencies. In addition, selective contacts capable of extracting charge from efficient absorbers with low ohmic losses and low recombination rates will be needed. Presented here are two approaches to the multifunctional interface problem, first the use of amorphous alloys that open up the accessible composition space of thin films significantly and second the use of bilayers that loosen the requirements of a single film at an interface.