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Sample records for high-performance polycrystalline silicon

  1. High-performance polycrystalline silicon thin-film transistors with two-dimensional location control of the grain boundary via excimer laser crystallization.

    PubMed

    Wang, Chao-Lung; Lee, I-Che; Wu, Chun-Yu; Liao, Chan-Yu; Cheng, Yu-Ting; Cheng, Huang-Chung

    2012-07-01

    High-performance low-temperature polycrystalline silicon (Poly-Si) thin-film transistors (TFTs) have been fabricated with two-dimensional (2-D) location-controlled grain boundaries using excimer laser crystallization (ELC). By locally increased thickness of the amorphous silicon (a-Si) film that was served as the seed crystals with a partial-melting crystallization scheme, the cross-shaped grain boundary structures were produced between the thicker a-Si grids. The Poly-Si TFTs with one parallel and one perpendicular grain boundary along the channel direction could therefore be fabricated to reach excellent field-effect mobility of 530 cm2/V-s while the conventional ones exhibited field-effect mobility of 198 cm2/V-s. Furthermore, the proposed TFTs achieved not only superior electric properties but also improved uniformity as compared with the conventional ones owing to the artificially controlled locations of grain boundaries.

  2. Recrystallization of polycrystalline silicon

    NASA Technical Reports Server (NTRS)

    Lall, C.; Kulkarni, S. B.; Graham, C. D., Jr.; Pope, D. P.

    1981-01-01

    Optical metallography is used to investigate the recrystallization properties of polycrystalline semiconductor-grade silicon. It is found that polycrystalline silicon recrystallizes at 1380 C in relatively short times, provided that the prior deformation is greater than 30%. For a prior deformation of about 40%, the recrystallization process is essentially complete in about 30 minutes. Silicon recrystallizes at a substantially slower rate than metals at equivalent homologous temperatures. The recrystallized grain size is insensitive to the amount of prestrain for strains in the range of 10-50%.

  3. Process Research On Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.; Wohlgemuth, J. H.

    1982-01-01

    Performance limiting mechanisms in polycrystalline silicon are investigated by fabricating a matrix of solar cells of various thicknesses from polycrystalline silicon wafers of several bulk resistivities. The analysis of the results for the entire matrix indicates that bulk recombination is the dominant factor limiting the short circuit current in large grain (greater than 1 to 2 mm diameter) polycrystalline silicon, the same mechanism that limits the short circuit current in single crystal silicon. An experiment to investigate the limiting mechanisms of open circuit voltage and fill factor for large grain polycrystalline silicon is designed. Two process sequences to fabricate small cells are investigated.

  4. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.; Wrigley, C. Y.

    1985-01-01

    Results of hydrogen-passivated polycrysalline silicon solar cell research are summarized. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystalline silicon solar cells.

  5. Casting larger polycrystalline silicon ingots

    SciTech Connect

    Wohlgemuth, J.; Tomlinson, T.; Cliber, J.; Shea, S.; Narayanan, M.

    1995-08-01

    Solarex has developed and patented a directional solidification casting process specifically designed for photovoltaics. In this process, silicon feedstock is melted in a ceramic crucible and solidified into a large grained semicrystalline silicon ingot. In-house manufacture of low cost, high purity ceramics is a key to the low cost fabrication of Solarex polycrystalline wafers. The casting process is performed in Solarex designed casting stations. The casting operation is computer controlled. There are no moving parts (except for the loading and unloading) so the growth process proceeds with virtually no operator intervention Today Solarex casting stations are used to produce ingots from which 4 bricks, each 11.4 cm by 11.4 cm in cross section, are cut. The stations themselves are physically capable of holding larger ingots, that would yield either: 4 bricks, 15 cm by 15 an; or 9 bricks, 11.4 cm by 11.4 an in cross-section. One of the tasks in the Solarex Cast Polycrystalline Silicon PVMaT Program is to design and modify one of the castings stations to cast these larger ingots. If successful, this effort will increase the production capacity of Solarex`s casting stations by 73% and reduce the labor content for casting by an equivalent percentage.

  6. Transparent polycrystalline cubic silicon nitride.

    PubMed

    Nishiyama, Norimasa; Ishikawa, Ryo; Ohfuji, Hiroaki; Marquardt, Hauke; Kurnosov, Alexander; Taniguchi, Takashi; Kim, Byung-Nam; Yoshida, Hidehiro; Masuno, Atsunobu; Bednarcik, Jozef; Kulik, Eleonora; Ikuhara, Yuichi; Wakai, Fumihiro; Irifune, Tetsuo

    2017-03-17

    Glasses and single crystals have traditionally been used as optical windows. Recently, there has been a high demand for harder and tougher optical windows that are able to endure severe conditions. Transparent polycrystalline ceramics can fulfill this demand because of their superior mechanical properties. It is known that polycrystalline ceramics with a spinel structure in compositions of MgAl2O4 and aluminum oxynitride (γ-AlON) show high optical transparency. Here we report the synthesis of the hardest transparent spinel ceramic, i.e. polycrystalline cubic silicon nitride (c-Si3N4). This material shows an intrinsic optical transparency over a wide range of wavelengths below its band-gap energy (258 nm) and is categorized as one of the third hardest materials next to diamond and cubic boron nitride (cBN). Since the high temperature metastability of c-Si3N4 in air is superior to those of diamond and cBN, the transparent c-Si3N4 ceramic can potentially be used as a window under extremely severe conditions.

  7. Transparent polycrystalline cubic silicon nitride

    NASA Astrophysics Data System (ADS)

    Nishiyama, Norimasa; Ishikawa, Ryo; Ohfuji, Hiroaki; Marquardt, Hauke; Kurnosov, Alexander; Taniguchi, Takashi; Kim, Byung-Nam; Yoshida, Hidehiro; Masuno, Atsunobu; Bednarcik, Jozef; Kulik, Eleonora; Ikuhara, Yuichi; Wakai, Fumihiro; Irifune, Tetsuo

    2017-03-01

    Glasses and single crystals have traditionally been used as optical windows. Recently, there has been a high demand for harder and tougher optical windows that are able to endure severe conditions. Transparent polycrystalline ceramics can fulfill this demand because of their superior mechanical properties. It is known that polycrystalline ceramics with a spinel structure in compositions of MgAl2O4 and aluminum oxynitride (γ-AlON) show high optical transparency. Here we report the synthesis of the hardest transparent spinel ceramic, i.e. polycrystalline cubic silicon nitride (c-Si3N4). This material shows an intrinsic optical transparency over a wide range of wavelengths below its band-gap energy (258 nm) and is categorized as one of the third hardest materials next to diamond and cubic boron nitride (cBN). Since the high temperature metastability of c-Si3N4 in air is superior to those of diamond and cBN, the transparent c-Si3N4 ceramic can potentially be used as a window under extremely severe conditions.

  8. Transparent polycrystalline cubic silicon nitride

    PubMed Central

    Nishiyama, Norimasa; Ishikawa, Ryo; Ohfuji, Hiroaki; Marquardt, Hauke; Kurnosov, Alexander; Taniguchi, Takashi; Kim, Byung-Nam; Yoshida, Hidehiro; Masuno, Atsunobu; Bednarcik, Jozef; Kulik, Eleonora; Ikuhara, Yuichi; Wakai, Fumihiro; Irifune, Tetsuo

    2017-01-01

    Glasses and single crystals have traditionally been used as optical windows. Recently, there has been a high demand for harder and tougher optical windows that are able to endure severe conditions. Transparent polycrystalline ceramics can fulfill this demand because of their superior mechanical properties. It is known that polycrystalline ceramics with a spinel structure in compositions of MgAl2O4 and aluminum oxynitride (γ-AlON) show high optical transparency. Here we report the synthesis of the hardest transparent spinel ceramic, i.e. polycrystalline cubic silicon nitride (c-Si3N4). This material shows an intrinsic optical transparency over a wide range of wavelengths below its band-gap energy (258 nm) and is categorized as one of the third hardest materials next to diamond and cubic boron nitride (cBN). Since the high temperature metastability of c-Si3N4 in air is superior to those of diamond and cBN, the transparent c-Si3N4 ceramic can potentially be used as a window under extremely severe conditions. PMID:28303948

  9. Bioactivity of polycrystalline silicon layers.

    PubMed

    Pramatarova, Lilyana; Pecheva, Emilia; Montgomery, Paul; Dimova-Malinovska, Doriana; Petrov, Todor; Toth, Attila L; Dimitrova, Magdalena

    2008-02-01

    After oxygen, silicon is the second most abundant element in the environment and is present as an impurity in most materials. The widespread occurrence of siliceous biominerals as structural elements in lower plants and animals suggests that Si plays a role in the production and maintenance of connective tissue in higher organisms. It has been shown that the presence of Si is necessary in bones, cartilage and in the formation of connective tissue, as well as in some important metabolic processes. In this work, polycrystalline silicon layers are tested in terms of bioactivity, i.e., their ability to induce hydroxyapatite formation from simulated body fluid. Hydroxyapatite is a biologically compatible material with chemical similarity to the inorganic part of bones and teeth. Polycrystalline silicon layers are obtained by aluminum induced crystallization of Al and amorphous Si thin films deposited sequentially on glass substrates by radio-frequency magnetron sputtering and subsequently annealed in different atmospheres. The hydroxyapatite formation is induced by applying a method of laser-liquid-solid interaction. The method consists of irradiating the samples with laser light while immersed in a solution that is supersaturated with respect to Ca and P. As a result, heterogeneous porous sponge-like carbonate-containing hydroxyapatite is grown on the polysilicon surfaces. Crystals that are spherical in shape, containing Ca, P and O, Na, Cl, Mg, Al, Si and S, as well as well-faceted NaCl crystals are embedded in the hydroxyapatite layer. Enhancement of the hydroxyapatite growth and increased crystallinity is observed due to the applied laser-liquid-solid interaction.

  10. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1983-01-01

    The performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was investigated by measuring the illuminated current voltage (I-V) characteristics of the minicell wafer set. The average short circuit current on different wafers is 3 to 14 percent lower than that of single crystal Czochralski silicon. The scatter was typically less than 3 percent. The average open circuit voltage is 20 to 60 mV less than that of single crystal silicon. The scatter in the open circuit voltage of most of the polycrystalline silicon wafers was 15 to 20 mV, although two wafers had significantly greater scatter than this value. The fill factor of both polycrystalline and single crystal silicon cells was typically in the range of 60 to 70 percent; however several polycrystalline silicon wafers have fill factor averages which are somewhat lower and have a significantly larger degree of scatter.

  11. Fluidized bed for production of polycrystalline silicon

    SciTech Connect

    Flagella, R.N.

    1992-08-18

    This patent describes a method for removing silicon powder particles from a reactor that produces polycrystalline silicon by the pyrolysis of a silane containing gas in a fluidized bed reaction zone of silicon seed particles. It comprises introducing the silane containing gas stream into the reaction zone of fluidized silicon seed particles; heterogeneously decomposing the silane containing gas under conditions; collecting the silicon product particles from the collection zone; and removing silicon powder particles from the reactor.

  12. Polycrystalline Silicon: a Biocompatibility Assay

    SciTech Connect

    Pecheva, E.; Fingarova, D.; Pramatarova, L.; Hikov, T.; Laquerriere, P.; Bouthors, Sylvie; Dimova-Malinovska, D.; Montgomery, P.

    2010-01-21

    Polycrystalline silicon (poly-Si) layers were functionalized through the growth of biomimetic hydroxyapatite (HA) on their surface. HA is the mineral component of bones and teeth and thus possesses excellent bioactivity and biocompatibility. MG-63 osteoblast-like cells were cultured on both HA-coated and un-coated poly-Si surfaces for 1, 3, 5 and 7 days and toxicity, proliferation and cell morphology were investigated. The results revealed that the poly-Si layers were bioactive and compatible with the osteoblast-like cells. Nevertheless, the HA coating improved the cell interactions with the poly-Si surfaces based on the cell affinity to the specific chemical composition of the bone-like HA and/or to the higher HA roughness.

  13. Efficient Process for Making Polycrystalline Silicon

    NASA Technical Reports Server (NTRS)

    Mccormick, J. R.; Plahutnik, F. JR.; Sawyer, D. H.; Arvidson, A. N.; Goldfarb, S. M.

    1985-01-01

    Solar cells made with lower capital and operating costs. Process based on chemical-vapor deposition (CVD) of dichlorosilane produces high-grade polycrystalline silicon for solar cells. Process has potential as cost-effective replacement for CVD of trichlorosilane.

  14. Improving Solar Cells With Polycrystalline Silicon

    NASA Technical Reports Server (NTRS)

    Rohatgi, Ajeet; Campbell, Robert B.; Rai-Choudhury, Prosenjit

    1987-01-01

    In proposed solar-cell design, layers of polycrystalline silicon grown near front metal grid and back metal surface. Net electrical effect increases open-circuit voltage and short-circuit current, resulting in greater cell power output and energy conversion efficiency. Solar-cell configuration differs from existing one in that layers of doped polycrystalline silicon added to reduce recombination in emitter and back surface field regions.

  15. Process Research of Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1984-01-01

    A passivation process (hydrogenation) that will improve the power generation of solar cells fabricated from presently produced, large grain, cast polycrystalline silicon (Semix), a potentially low cost material are developed. The first objective is to verify the operation of a DC plasma hydrogenation system and to investigate the effect of hydrogen on the electrical performance of a variety of polycrystalline silicon solar cells. The second objective is to parameterize and optimize a hydrogenation process for cast polycrystalline silicon, and will include a process sensitivity analysis. The sample preparation for the first phase is outlined. The hydrogenation system is described, and some early results that were obtained using the hydrogenation system without a plasma are summarized. Light beam induced current (LBIC) measurements of minicell samples, and their correlation to dark current voltage characteristics, are discussed.

  16. Process for Polycrystalline film silicon growth

    DOEpatents

    Wang, Tihu; Ciszek, Theodore F.

    2001-01-01

    A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.

  17. Process Research On Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Wohlgemuth, J. H.; Culik, J. S.

    1982-01-01

    The mechanisms limiting performance in polycrystalline silicon was determined. The initial set of experiments in this task entails the fabrication of cells of various thicknesses for four different bulk resistivities between 0.1 and 10 omega-cm. The results for the first two lots are presented.

  18. Polycrystalline silicon on tungsten substrates

    NASA Technical Reports Server (NTRS)

    Bevolo, A. J.; Schmidt, F. A.; Shanks, H. R.; Campisi, G. J.

    1979-01-01

    Thin films of electron-beam-vaporized silicon were deposited on fine-grained tungsten substrates under a pressure of about 1 x 10 to the -10th torr. Mass spectra from a quadrupole residual-gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. During separate silicon depositions, the atomically clean substrates were maintained at various temperatures between 400 and 780 C, and deposition rates were between 20 and 630 A min. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition, and annealing. Auger depth profiling, X-ray analysis, and SEM in the topographic and channeling modes were utilized to characterize the samples with respect to silicon-metal interface, interdiffusion, silicide formation, and grain size of silicon. The onset of silicide formation was found to occur at approximately 625 C. Above this temperature tungsten silicides were formed at a rate faster than the silicon deposition. Fine-grain silicon films were obtained at lower temperatures.

  19. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.; Wrigley, C. Y.

    1984-01-01

    Results of hydrogen-passivated polycrystalline silicon solar cells are summarized. Very small grain or short minority-carrier diffusion length silicon was used. Hydrogenated solar cells fabricated from this material appear to have effective minority-carrier diffusion lengths that are still not very long, as shown by the open-circuit voltages of passivated cells that are still significantly less than those of single-crystal solar cells. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. However, the open-circuit voltage, which is sensitive to grain boundary recombination, is sometimes 20 to 40 mV less. The goal was to minimize variations in open-circuit voltage and fill-factor caused by defects by passivating these defects using a hydrogenation process. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystaline silicon solar cells.

  20. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1982-01-01

    The investigation of the performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was continued by fabricating a set of minicell wafers on a selection of 10 cm x 10 cm wafers. A minicell wafer consists of an array of small (approximately 0.2 sq cm in area) photodiodes which are isolated from one another by a mesa structure. The junction capacitance of each minicell was used to obtain the dopant concentration, and therefore the resistivity, as a function of position across each wafer. The results indicate that there is no significant variation in resistivity with position for any of the polycrystalline wafers, whether Semix or Wacker. However, the resistivity of Semix brick 71-01E did decrease slightly from bottom to top.

  1. Solution-processed polycrystalline silicon on paper

    SciTech Connect

    Trifunovic, M.; Ishihara, R.; Shimoda, T.

    2015-04-20

    Printing electronics has led to application areas which were formerly impossible with conventional electronic processes. Solutions are used as inks on top of large areas at room temperatures, allowing the production of fully flexible circuitry. Commonly, research in these inks have focused on organic and metal-oxide ink materials due to their printability, while these materials lack in the electronic performance when compared to silicon electronics. Silicon electronics, on the other hand, has only recently found their way in solution processes. Printing of cyclopentasilane as the silicon ink has been conducted and devices with far superior electric performance have been made when compared to other ink materials. A thermal annealing step of this material, however, was necessary, which prevented its usage on inexpensive substrates with a limited thermal budget. In this work, we introduce a method that allows polycrystalline silicon (poly-Si) production directly from the same liquid silicon ink using excimer laser irradiation. In this way, poly-Si could be formed directly on top of paper even with a single laser pulse. Using this method, poly-Si transistors were created at a maximum temperature of only 150 °C. This method allows silicon device formation on inexpensive, temperature sensitive substrates such as polyethylene terephthalate, polyethylene naphthalate or paper, which leads to applications that require low-cost but high-speed electronics.

  2. Solution-processed polycrystalline silicon on paper

    NASA Astrophysics Data System (ADS)

    Trifunovic, M.; Shimoda, T.; Ishihara, R.

    2015-04-01

    Printing electronics has led to application areas which were formerly impossible with conventional electronic processes. Solutions are used as inks on top of large areas at room temperatures, allowing the production of fully flexible circuitry. Commonly, research in these inks have focused on organic and metal-oxide ink materials due to their printability, while these materials lack in the electronic performance when compared to silicon electronics. Silicon electronics, on the other hand, has only recently found their way in solution processes. Printing of cyclopentasilane as the silicon ink has been conducted and devices with far superior electric performance have been made when compared to other ink materials. A thermal annealing step of this material, however, was necessary, which prevented its usage on inexpensive substrates with a limited thermal budget. In this work, we introduce a method that allows polycrystalline silicon (poly-Si) production directly from the same liquid silicon ink using excimer laser irradiation. In this way, poly-Si could be formed directly on top of paper even with a single laser pulse. Using this method, poly-Si transistors were created at a maximum temperature of only 150 °C. This method allows silicon device formation on inexpensive, temperature sensitive substrates such as polyethylene terephthalate, polyethylene naphthalate or paper, which leads to applications that require low-cost but high-speed electronics.

  3. Polycrystalline silicon semiconducting material by nuclear transmutation doping

    DOEpatents

    Cleland, John W.; Westbrook, Russell D.; Wood, Richard F.; Young, Rosa T.

    1978-01-01

    A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.

  4. Polycrystalline silicon conductivity modulated thin film transistors

    NASA Astrophysics Data System (ADS)

    Anish, Kumar K. P.

    1997-09-01

    Polycrystalline silicon (poly-Si) thin-film transistors (TFTs) on glass has received significant attention for use in large area microelectronic applications. These applications include both niche and large volume applications such as printer drivers, image scanners, active-matrix liquid crystal displays (AMLCDs), electro-luminescent displays, plasma assisted displays, etc. Currently, the leading technology for these applications is amorphous-Si (a-Si) TFT. However, as the information content increases, a-Si technology encounters severe challenges due to its inherent low mobility, high parasitic capacitance, low aperture ratio, and non-compatibility to CMOS process. On the other hand, poly-Si technology offers high mobility, low parasitic capacitance, small size, CMOS compatibility, good stability, and uses the infrastructure of silicon science and technology. Thus, a simple low temperature poly-Si technology which allows large area system integration on panel will be in great demand for future high definition displays. However, it was found that poly-Si material properties vary with its method of preparation, its grain size, its surface roughness, and the nature and distribution of the inter-granular and bulk defects. Therefore, extensive studies are needed to optimize the key parameters such as the off-current, on-current, and breakdown voltage of the devices. These parameters can be optimized by means of material preparation as well as innovative device designs. In this thesis, three TFT structures were invented and fabricated using a simple low temperature poly-Si technology. With these novel structures, pixels, pixel drivers, and analog and digital peripheral circuits can all be built on the same glass substrate. This allows the ultimate goal of display systems on glass to be much more closer to reality. First, a high voltage transistor called the Conductivity Modulated Thin Film Transistor (CMTFT) is presented. Using this structure, the fundamental current

  5. Hydrogen passivation of polycrystalline silicon thin films

    NASA Astrophysics Data System (ADS)

    Scheller, L.-P.; Weizman, M.; Simon, P.; Fehr, M.; Nickel, N. H.

    2012-09-01

    The influence of post-hydrogenation on the electrical and optical properties of solid phase crystallized polycrystalline silicon (poly-Si) was examined. The passivation of grain-boundary defects was measured as a function of the passivation time. The silicon dangling-bond concentration decreases with increasing passivation time due to the formation of Si-H complexes. In addition, large H-stabilized platelet-like clusters are generated. The influence of H on the electrical properties was investigated using temperature dependent conductivity and Hall-effect measurements. For poly-Si on Corning glass, the dark conductivity decreases upon hydrogenation, while it increases when the samples are fabricated on silicon-nitride covered Borofloat glass. Hall-effect measurements reveal that for poly-Si on Corning glass the hole concentration and the mobility decrease upon post-hydrogenation, while a pronounced increase is observed for poly-Si on silicon-nitride covered Borofloat glass. This indicates the formation of localized states in the band gap, which is supported by sub band-gap absorption measurments. The results are discussed in terms of hydrogen-induced defect passivation and generation mechanisms.

  6. Polycrystalline silicon ion sensitive field effect transistors

    NASA Astrophysics Data System (ADS)

    Yan, F.; Estrela, P.; Mo, Y.; Migliorato, P.; Maeda, H.; Inoue, S.; Shimoda, T.

    2005-01-01

    We report the operation of polycrystalline silicon ion sensitive field effect transistors. These devices can be fabricated on inexpensive disposable substrates such as glass or plastics and are, therefore, promising candidates for low cost single-use intelligent multisensors. In this work we have developed an extended gate structure with a Si3N4 sensing layer. Nearly ideal pH sensitivity (54mV /pH) and stable operation have been achieved. Temperature effects have been characterized. A penicillin sensor has been fabricated by functionalizing the sensing area with penicillinase. The sensitivity to penicillin G is about 10mV/mM, in solutions with concentration lower than the saturation value, which is about 7 mM.

  7. Polycrystalline silicon study: Low-cost silicon refining technology prospects and semiconductor-grade polycrystalline silicon availability through 1988

    NASA Technical Reports Server (NTRS)

    Costogue, E. N.; Ferber, R.; Lutwack, R.; Lorenz, J. H.; Pellin, R.

    1984-01-01

    Photovoltaic arrays that convert solar energy into electrical energy can become a cost effective bulk energy generation alternative, provided that an adequate supply of low cost materials is available. One of the key requirements for economic photovoltaic cells is reasonably priced silicon. At present, the photovoltaic industry is dependent upon polycrystalline silicon refined by the Siemens process primarily for integrated circuits, power devices, and discrete semiconductor devices. This dependency is expected to continue until the DOE sponsored low cost silicon refining technology developments have matured to the point where they are in commercial use. The photovoltaic industry can then develop its own source of supply. Silicon material availability and market pricing projections through 1988 are updated based on data collected early in 1984. The silicon refining industry plans to meet the increasing demands of the semiconductor device and photovoltaic product industries are overviewed. In addition, the DOE sponsored technology research for producing low cost polycrystalline silicon, probabilistic cost analysis for the two most promising production processes for achieving the DOE cost goals, and the impacts of the DOE photovoltaics program silicon refining research upon the commercial polycrystalline silicon refining industry are addressed.

  8. Tribological properties of sintered polycrystalline and single crystal silicon carbide

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.; Srinivasan, M.

    1982-01-01

    Tribological studies and X-ray photoelectron spectroscopy analyses were conducted with sintered polycrystalline and single crystal silicon carbide surfaces in sliding contact with iron at various temperatures to 1500 C in a vacuum of 30 nPa. The results indicate that there is a significant temperature influence on both the friction properties and the surface chemistry of silicon carbide. The main contaminants on the as received sintered polycrystalline silicon carbide surfaces are adsorbed carbon, oxygen, graphite, and silicon dioxide. The surface revealed a low coefficient of friction. This is due to the presence of the graphite on the surface. At temperatures of 400 to 600 C graphite and copious amount of silicon dioxide were observed on the polycrystalline silicon carbide surface in addition to silicon carbide. At 800 C, the amount of the silicon dioxide decreased rapidly and the silicon carbide type silicon and carbon peaks were at a maximum intensity in the XPS spectra. The coefficients of friction were high in the temperature range 400 to 800 C. Small amounts of carbon and oxygen contaminants were observed on the as received single crystal silicon carbide surface below 250 C. Silicon carbide type silicon and carbon peaks were seen on the silicon carbide in addition to very small amount of graphite and silicon dioxide at temperatures of 450 to 800 C.

  9. High-performance silicon nanowire bipolar phototransistors

    NASA Astrophysics Data System (ADS)

    Tan, Siew Li; Zhao, Xingyan; Chen, Kaixiang; Crozier, Kenneth B.; Dan, Yaping

    2016-07-01

    Silicon nanowires (SiNWs) have emerged as sensitive absorbing materials for photodetection at wavelengths ranging from ultraviolet (UV) to the near infrared. Most of the reports on SiNW photodetectors are based on photoconductor, photodiode, or field-effect transistor device structures. These SiNW devices each have their own advantages and trade-offs in optical gain, response time, operating voltage, and dark current noise. Here, we report on the experimental realization of single SiNW bipolar phototransistors on silicon-on-insulator substrates. Our SiNW devices are based on bipolar transistor structures with an optically injected base region and are fabricated using CMOS-compatible processes. The experimentally measured optoelectronic characteristics of the SiNW phototransistors are in good agreement with simulation results. The SiNW phototransistors exhibit significantly enhanced response to UV and visible light, compared with typical Si p-i-n photodiodes. The near infrared responsivities of the SiNW phototransistors are comparable to those of Si avalanche photodiodes but are achieved at much lower operating voltages. Compared with other reported SiNW photodetectors as well as conventional bulk Si photodiodes and phototransistors, the SiNW phototransistors in this work demonstrate the combined advantages of high gain, high photoresponse, low dark current, and low operating voltage.

  10. Effect of copper impurity on polycrystalline silicon solar cells

    NASA Technical Reports Server (NTRS)

    Daud, T.; Koliwad, K. M.

    1978-01-01

    The presence of copper impurity, up to 10 to the 15th atoms/cc, in single crystal silicon has been shown to have no deleterious effect on the p-n junction solar cell performance. However, in polycrystalline silicon, copper atoms tend to migrate to the defect sites because of the structural sensitive properties of copper. This study was undertaken to investigate the influence of this behavior of copper impurity on the performance of p-n junction solar cells fabricated from structurally imperfect silicon. Two sets of polycrystalline silicon substrates containing copper were examined. In one set of samples, copper was incorporated during growth, whereas in the other, copper was diffused. Solar cells were fabricated on both the sets of substrates by a standard process. Dark and light I-V and spectral response characteristics of the cells were measured and compared with copper-free polycrystalline silicon solar cells. The results and the model are discussed.

  11. Defect behavior of polycrystalline solar cell silicon

    SciTech Connect

    Schroder, D.K.; Park, S.H.; Hwang, I.G.; Mohr, J.B.; Hanly, M.P.

    1993-05-01

    The major objective of this study, conducted from October 1988 to September 1991, was to gain an understanding of the behavior of impurities in polycrystalline silicon and the influence of these impurities on solar cell efficiency. The authors studied edge-defined film-fed growth (EFG) and cast poly-Si materials and solar cells. With EFG Si they concentrated on chromium-doped materials and cells to determine the role of Cr on solar cell performance. Cast poly-Si samples were not deliberately contaminated. Samples were characterized by cell efficiency, current-voltage, deep-level transient spectroscopy (DLTS), surface photovoltage (SPV), open-circuit voltage decay, secondary ion mass spectrometry, and Fourier transform infrared spectroscopy measurements. They find that Cr forms Cr-B pairs with boron at room temperature and these pairs dissociate into Cr{sub i}{sup +} and B{sup {minus}} during anneals at 210{degrees}C for 10 min. Following the anneal, Cr-B pairs reform at room temperature with a time constant of 230 h. Chromium forms CrSi{sub 2} precipitates in heavily contaminated regions and they find evidence of CrSi{sub 2} gettering, but a lack of chromium segregation or precipitation to grain boundaries and dislocations. Cr-B pairs have well defined DLTS peaks. However, DLTS spectra of other defects are not well defined, giving broad peaks indicative of defects with a range of energy levels in the band gap. In some high-stress, low-efficiency cast poly-Si they detect SiC precipitates, but not in low-stress, high-efficiency samples. SPV measurements result in nonlinear SPV curves in some materials that are likely due to varying optical absorption coefficients due to locally varying stress in the material.

  12. Influence of substrates on formation of polycrystalline silicon nanowire films

    NASA Astrophysics Data System (ADS)

    Kato, Shinya; Yamazaki, Tatsuya; Miyajima, Shinsuke; Konagai, Makoto

    2014-10-01

    Polycrystalline silicon nanowires (poly-SiNWs) films were successfully prepared by using metal assisted chemical etching of polycrystalline silicon (poly-Si) films. The poly-Si films were prepared by solid-phase crystallization of amorphous silicon (a-Si) deposited by different deposition techniques on different substrates. In the case of the electron beam evaporated a-Si on a quartz substrate, the formation of poly-SiNWs was not observed and the structure was found to be porous silicon. On the other hand, poly-SiNWs successfully formed from poly-Si on a silicon substrate. We also found that deposition techniques for a-Si films affect the formation of poly-SiNWs.

  13. Laser-induced amorphization of silicon during pulsed-laser irradiation of TiN/Ti/polycrystalline silicon/SiO2/silicon

    NASA Astrophysics Data System (ADS)

    Chong, Y. F.; Pey, K. L.; Wee, A. T. S.; Thompson, M. O.; Tung, C. H.; See, A.

    2002-11-01

    In this letter, we report on the complex solidification structures formed during laser irradiation of a titanium nitride/titanium/polycrystalline silicon/silicon dioxide/silicon film stack. Due to enhanced optical coupling, the titanium nitride/titanium capping layer increases the melt depth of polycrystalline silicon by more than a factor of 2. It is found that the titanium atoms diffuse through the entire polycrystalline silicon layer during irradiation. Contrary to the expected polycrystalline silicon growth, distinct regions of polycrystalline and amorphous silicon are formed instead. Possible mechanisms for the formation of these microstructures are proposed.

  14. Slot waveguides with polycrystalline silicon for electrical injection.

    PubMed

    Preston, Kyle; Lipson, Michal

    2009-02-02

    We demonstrate horizontal slot waveguides using high-index layers of polycrystalline and single crystalline silicon separated by a 10 nm layer of silicon dioxide. We measure waveguide propagation loss of 7 dB/cm and a ring resonator intrinsic quality factor of 83,000. The electric field of the optical mode is strongly enhanced in the low-index oxide layer, which can be used to induce a strong modal gain when an active material is embedded in the slot. Both high-index layers are made of electrically conductive silicon which can efficiently transport charge to the slot region. The incorporation of conductive silicon materials with high-Q slot waveguide cavities is a key step for realizing electrical tunneling devices such as electrically pumped silicon-based light sources.

  15. Process Research of Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1984-01-01

    An investigation was begun into the usefulness of molecular hydrogen annealing on polycrystalline solar cells. No improvement was realized even after twenty hours of hydrogenation. Thus, samples were chosen on the basis of: (1) low open circuit voltage; (2) low shunt conductance; and (3) high light generated current. These cells were hydrogenated in molecular hydrogen at 300 C. The differences between the before and after hydrogenation values are so slight as to be negligible. These cells have light generated current densities that indicate long minority carrier diffusion lengths. The open circuit voltage appears to be degraded, and quasi-neutral recombination current enhanced. Therefore, molecular hydrogen is not usful for passivating electrically active defects.

  16. Piezoresistive Transduction in Multilayer Polycrystalline Silicon Resonators

    DTIC Science & Technology

    2009-10-01

    semiconductor CMOS foundry processes,6 and as such, is amenable to integration with minimal process disruption. A further advantage of this approach is...poly- crystalline silicon CMOS foundry processes, opening up the possibility of directly integrating MEMS devices and trans- ducers with CMOS . This... Fab - rication was performed at the Cornell Nanoscale Science and Technology Facility, and certain measurements were per- formed at the Cornell Center

  17. An EBIC study of HEM polycrystalline silicon

    NASA Technical Reports Server (NTRS)

    Koch, T.; Ast, D.

    1982-01-01

    Low-cost silicon for solar cells grown by the heat exchanger method (HEM) was studied in the electron beam induced current (EBIC) mode of a scanning electron microscope (SEM). Comparisons were made between the defects observed optically and the recombination centers visible in EBIC. Much of the HEM material was single crystalline, but structural defects were found from areas near the corners of the grown material. Most of these defects consisted of linear twin boundaries and grain boundaries. The electrical activity of these boundaries was dependent on symmetry of the boundaries. Symmetric twin boundaries did not exhibit recombination activity while unsymmetric twin boundaries were electrically active.

  18. Dependence of resistivity on the doping level of polycrystalline silicon

    NASA Technical Reports Server (NTRS)

    Fripp, A. L.

    1975-01-01

    The electrical resistivity of polycrystalline silicon films has been studied as a function of doping concentration and heat treatment. The films were grown by the chemical vapor decomposition of silane on oxidized silicon wafers. The resistivity of the as-deposited films was widely scattered but independent of dopant atom concentration at the lightly doped levels and was strong function of dopant level in the more heavily doped regions. Postdeposition heat treatments in an oxidizing atmosphere remove scatter in the data. The resultant resistivity for dopant levels less than 10 to the 16th atoms/per cu cm was approximately equal to that of intrinsic silicon. In the next 2 orders of magnitude increase in dopant level, the resistivity dropped 6 orders of magnitude. A model, based on high dopant atom segregation in the grain boundaries, is proposed to explain the results.

  19. Backside damage-gettering in cast polycrystalline silicon

    NASA Technical Reports Server (NTRS)

    Culik, J.; Roncin, S.; Alexander, P.

    1984-01-01

    The technique of backside-damage gettering improves the performance of short minority-carrier diffusion length, large-grain (grain diameter greater than 1 to 2 mm), cast polycrystalline silicon. On average, increases of nearly 20 percent in short-circuit current, 10 mV in open-circuit voltage, and 15 percent in peak-power were obtained by heat-treating 300 micron thick polycrystalline wafers at 1000 C in flowing nitrogen for 5 hours. Additional measurements of the bulk and space-charge recombination current components indicate that this improvement results from a significant increase in the minority-carrier diffusion length due to gettering of impurities from the bulk.

  20. High performance silicon solar arrays employing advanced structures

    NASA Technical Reports Server (NTRS)

    Rockey, D. E.; Hedgepeth, J. M.; Adams, L.

    1981-01-01

    Specific design features to reduce cell mass, lower panel operating temperatures, and improve power to mass ratios for silicon solar cell arrays in space applications are presented. Because mass constraints limit payload capacity for launch into GEO, graphite/epoxy structures combined with high performance Si cells are needed to deliver a power/mass ratio of 265 W/kg, notably for Solar Electric Propulsion systems, compared with existing level of 65 W/kg. Shallow diffusion and back surface field cell technology have raised cell efficiencies to 15%, with a back emissivity of 1.64. Structural design requirements comprise Shuttle interface compatibility, full ground test capability, low mass, and high stiffness. Three array alternatives are discussed, and the STACBEAM configuration, which consists of a triangular truss and a piston deployer with folding accomplished on simple hinges, provides 0.2 Hz stiffness and achieves the design power/mass goals.

  1. Polycrystalline silicon optical fibers with atomically smooth surfaces.

    PubMed

    Healy, Noel; Lagonigro, Laura; Sparks, Justin R; Boden, Stuart; Sazio, Pier J A; Badding, John V; Peacock, Anna C

    2011-07-01

    We investigate the surface roughness of polycrystalline silicon core optical fibers fabricated using a high-pressure chemical deposition technique. By measuring the optical transmission of two fibers with different core sizes, we will show that scattering from the core-cladding interface has a negligible effect on the losses. A Zemetrics ZeScope three-dimensional optical profiler has been used to directly measure the surface of the core material, confirming a roughness of only ~0.1 nm. The ability to fabricate low-loss polysilicon optical fibers with ultrasmooth cores scalable to submicrometer dimensions should establish their use in a range of nonlinear optical applications.

  2. Polycrystalline silicon availability for photovoltaic and semiconductor industries

    NASA Technical Reports Server (NTRS)

    Ferber, R. R.; Costogue, E. N.; Pellin, R.

    1982-01-01

    Markets, applications, and production techniques for Siemens process-produced polycrystalline silicon are surveyed. It is noted that as of 1982 a total of six Si materials suppliers were servicing a worldwide total of over 1000 manufacturers of Si-based devices. Besides solar cells, the Si wafers are employed for thyristors, rectifiers, bipolar power transistors, and discrete components for control systems. An estimated 3890 metric tons of semiconductor-grade polycrystalline Si will be used in 1982, and 6200 metric tons by 1985. Although the amount is expected to nearly triple between 1982-89, research is being carried out on the formation of thin films and ribbons for solar cells, thereby eliminating the waste produced in slicing Czolchralski-grown crystals. The free-world Si production in 1982 is estimated to be 3050 metric tons. Various new technologies for the formation of polycrystalline Si at lower costs and with less waste are considered. New entries into the industrial Si formation field are projected to produce a 2000 metric ton excess by 1988.

  3. Spherical silicon photonic microcavities: From amorphous to polycrystalline

    NASA Astrophysics Data System (ADS)

    Fenollosa, R.; Garín, M.; Meseguer, F.

    2016-06-01

    Shaping silicon as a spherical object is not an obvious task, especially when the object size is in the micrometer range. This has the important consequence of transforming bare silicon material in a microcavity, so it is able to confine light efficiently. Here, we have explored the inside volume of such microcavities, both in their amorphous and in their polycrystalline versions. The synthesis method, which is based on chemical vapor deposition, causes amorphous microspheres to have a high content of hydrogen that produces an onionlike distributed porous core when the microspheres are crystallized by a fast annealing regime. This substantially influences the resonant modes. However, a slow crystallization regime does not yield pores, and produces higher-quality-factor resonances that could be fitted to the Mie theory. This allows the establishment of a procedure for obtaining size calibration standards with relative errors of the order of 0.1%.

  4. Edge determination for polycrystalline silicon lines on gate oxide

    NASA Astrophysics Data System (ADS)

    Villarrubia, John S.; Vladar, Andras E.; Lowney, Jeremiah R.; Postek, Michael T., Jr.

    2001-08-01

    In a scanning electron microscope (SEM) top-down secondary electron image, areas within a few tens of nanometers of the line edges are characteristically brighter than the rest of the image. In general, the shape of the secondary electron signal within such edge regions depends upon the energy and spatial distribution of the electron beam and the sample composition, and it is sensitive to small variations in sample geometry. Assigning edge shape and position is done by finding a model sample that is calculated, on the basis of a mathematical model of the instrument-sample interaction, to produce an image equal to the one actually observed. Edge locations, and consequently line widths, are then assigned based upon this model sample. In previous years we have applied this strategy to lines with geometry constrained by preferential etching of single crystal silicon. With this study we test the procedure on polycrystalline silicon lines. Polycrystalline silicon lines fabricated according to usual industrial processes represent a commercially interesting albeit technically more challenging application of this method. With the sample geometry less constrained a priori, a larger set of possible sample geometries must be modeled and tested for a match to the observed line scan, and the possibility of encountering multiple acceptable matches is increased. For this study we have implemented a data analysis procedure that matches measured image line scans to a precomputed library of sample shapes and their corresponding line scans. Linewidth test patterns containing both isolated and dense lines separated form the underlying silicon substrate by a thin gate oxide have been fabricated. Line scans from test pattern images have been fitted to the library of modeled shapes.

  5. Limiting mechanisms in large-grain polycrystalline silicon Spatial homogeneity

    NASA Technical Reports Server (NTRS)

    Culik, J.; Grimes, K.

    1984-01-01

    An experiment to investigate the spatial homogeneity of large-grain polycrystalline silicon shows a number of performance-loss mechanisms. Arrays of up to 400 small (about 0.2 sq cm in area) photodiodes were fabricated on a selection of 10 cm x 10 cm polycrystalline silicon wafers. Measurements of the illuminated current-voltage (J-V) characteristics were used to generate maps of Voc, Jsc, and FF as a function of position; and dark J-V and LBIC analysis were used to determine the cause of low performance in areas with significantly degraded J-V characteristics. In addition to the presence of inclusions, which act as resistive shunts, the performance of many of the cells is limited by quasineutral recombination current, which may vary by up to an order of magnitude across a wafer. The increase is the result of either electrically-active grain boundaries or numerous subgrain boundaries within the grain bulk. In other isolated instances, the open-circuit voltage is reduced by excess space-charge recombination current that is not correlated with either grain or subgrain boundary activity.

  6. Formation of porous grain boundaries in polycrystalline silicon thin films

    NASA Astrophysics Data System (ADS)

    Kageyama, Yasuyuki; Murase, Yoshie; Tsuchiya, Toshiyuki; Funabashi, Hirofumi; Sakata, Jiro

    2002-06-01

    Unique polycrystalline silicon (poly-Si) thin films, which were permeable to a concentrated hydrofluoric acid solution through their porous grain boundaries, were investigated to elucidate the formation mechanism of their microstructure. 0.1-μm-thick permeable poly-Si thin films were made through processes of amorphous silicon film formation by low pressure chemical vapor deposition, successive postannealing for crystallization, and excess phosphorus diffusion by a phosphorus oxichloride predeposition. At the grain boundaries, porous microstructures were formed after the films were cleaned in an SC1 solution (a 1:1:5 mixture of NH4OH:H2O2:H2O at 80 °C for 10 min), whereas segregated soluble precipitates observed by a field emission secondary electron microscope were present before the SC1 cleaning. Auger electron microscope revealed that the surface of the precipitates mainly consist of silicon (˜80 at. %) and oxygen (˜20 at. %). As a result of transmission electron microscope observation, it is concluded that enhancement of silicon atom mobility by the phosphorus doping process induced consequent segregation of the soluble precipitates at the grain boundaries.

  7. Surface roughness measurements of micromachined polycrystalline silicon films

    NASA Astrophysics Data System (ADS)

    Phinney, L. M.; Lin, G.; Wellman, J.; Garcia, A.

    2004-07-01

    The characteristics of the materials and surfaces in microelectromechanical systems (MEMS) and microsystems technology (MST) profoundly affect the performance, reliability, and wear of MEMS and MST devices. It is critical to measure the properties of surfaces that are in contact during microstructure movement, such as the underside of a MEMS gear and the underlying substrate. However, contacting surfaces are usually inaccessible unless the MEMS device is broken and removed from the substrate. This paper presents a nondestructive method for characterizing commercially fabricated surface micromachined polycrystalline silicon (polysilicon) devices. Microhinged flaps were designed that enable access to the upper surface, the part of a structural layer deposited last; the lower surface, the part of a structural layer deposited first; and the underlying substrate. Due to the susceptibility of surface-micromachined MEMS to adhesion failures, the surface roughness is a key parameter for predicting device behavior. Using the microhinged flaps, the RMS surface roughness for polycrystalline surfaces was measured and indicated that the upper surfaces were 3.5-6.4 times rougher than the lower surfaces. The difference in the surface roughness for the upper surface, which is easily accessed and the one most commonly characterized, and that for the lower surface reveals the importance of characterizing contacting surfaces in MEMS and MST devices.

  8. Recombination-active defects in silicon ribbon and polycrystalline solar cells

    NASA Technical Reports Server (NTRS)

    Cheng, L. J.

    1984-01-01

    This paper reports results from a study of recombination-active structural defects in silicon ribbon and polycrystalline solar cells using the electron beam induced current (EBIC) technique in a scanning electron microscope. It is demonstrated that low temperature EBIC measurements can reveal a range of defects that are not observable at room temperature, including slip dislocations in silicon dendritic web ribbons as well as decorated twin boundaries and dislocation complexes in cast polycrystalline silicon solar cell materials.

  9. Fabricating micro-instruments in surface-micromachined polycrystalline silicon

    SciTech Connect

    Comtois, J.H.; Michalicek, M.A.; Barron, C.C.

    1997-04-01

    Smaller, lighter instruments can be fabricated as Micro-Electro-Mechanical Systems (MEMS), having micron scale moving parts packaged together with associated control and measurement electronics. Batch fabrication of these devices will make economical applications such as condition-based machine maintenance and remote sensing. The choice of instrumentation is limited only by the designer`s imagination. This paper presents one genre of MEMS fabrication, surface-micromachined polycrystalline silicon (polysilicon). Two currently available but slightly different polysilicon processes are presented. One is the ARPA-sponsored ``Multi-User MEMS ProcesS`` (MUMPS), available commercially through MCNC; the other is the Sandia National Laboratories ``Sandia Ultra-planar Multilevel MEMS Technology`` (SUMMiT). Example components created in both processes will be presented, with an emphasis on actuators, actuator force testing instruments, and incorporating actuators into larger instruments.

  10. Effect of localized polycrystalline silicon properties on solar cell performance

    NASA Technical Reports Server (NTRS)

    Leung, D.; Iles, P. A.; Hyland, S.; Kachare, A.

    1984-01-01

    Several forms of polycrystalline silicon, mostly from cast ingots, (including UCP, SILSO and HEM) were studied. On typical slices, localized properties were studied in two ways. Small area (about 2.5 sq mm) mesa diodes were formed, and localized photovoltaic properties were measured. Also a small area (about .015 sq mm) light spot was scanned across the cells; the light spot response was calibrated to measure local diffusion length directly. Using these methods, the effects of grain boundaries, or of intragrain imperfections were correlated with cell performance. Except for the fine grain portion of SILSO, grain boundaries played only a secondary role in determining cell performance. The major factor was intra-grain material quality and it varied with position in ingots and probably related to solidification procedure.

  11. Predicting fracture in micron-scale polycrystalline silicon MEMS structures.

    SciTech Connect

    Hazra, Siddharth S.; de Boer, Maarten Pieter; Boyce, Brad Lee; Ohlhausen, James Anthony; Foulk, James W., III; Reedy, Earl David, Jr.

    2010-09-01

    Designing reliable MEMS structures presents numerous challenges. Polycrystalline silicon fractures in a brittle manner with considerable variability in measured strength. Furthermore, it is not clear how to use a measured tensile strength distribution to predict the strength of a complex MEMS structure. To address such issues, two recently developed high throughput MEMS tensile test techniques have been used to measure strength distribution tails. The measured tensile strength distributions enable the definition of a threshold strength as well as an inferred maximum flaw size. The nature of strength-controlling flaws has been identified and sources of the observed variation in strength investigated. A double edge-notched specimen geometry was also tested to study the effect of a severe, micron-scale stress concentration on the measured strength distribution. Strength-based, Weibull-based, and fracture mechanics-based failure analyses were performed and compared with the experimental results.

  12. Highly doped polycrystalline silicon microelectrodes reduce noise in neuronal recordings in vivo.

    PubMed

    Saha, Rajarshi; Jackson, Nathan; Patel, Chetan; Muthuswamy, Jit

    2010-10-01

    The aims of this study are to 1) experimentally validate for the first time the nonlinear current-potential characteristics of bulk doped polycrystalline silicon in the small amplitude voltage regimes (0-200 μV) and 2) test if noise amplitudes ( 0-15 μV ) from single neuronal electrical recordings get selectively attenuated in doped polycrystalline silicon microelectrodes due to the above property. In highly doped polycrystalline silicon, bulk resistances of several hundred kilo-ohms were experimentally measured for voltages typical of noise amplitudes and 9-10 kΩ for voltages typical of neural signal amplitudes ( > 150-200 μV). Acute multiunit measurements and noise measurements were made in n=6 and n=8 anesthetized adult rats, respectively, using polycrystalline silicon and tungsten microelectrodes. There was no significant difference in the peak-to-peak amplitudes of action potentials recorded from either microelectrode (p > 0.10). However, noise power in the recordings from tungsten microelectrodes (26.36 ±10.13 pW) was significantly higher than the corresponding value in polycrystalline silicon microelectrodes (7.49 ±2.66 pW). We conclude that polycrystalline silicon microelectrodes result in selective attenuation of noise power in electrical recordings compared to tungsten microelectrodes. This reduction in noise compared to tungsten microelectrodes is likely due to the exponentially higher bulk resistances offered by highly doped bulk polycrystalline silicon in the range of voltages corresponding to noise in multiunit measurements.

  13. Construction of High-Performance, Low-Cost Photoelectrodes with Controlled Polycrystalline Architectures

    SciTech Connect

    Kyoung-Shin Choi

    2013-06-30

    The major goal of our research was to gain the ability in electrochemical synthesis to precisely control compositions and morphologies of various oxide-based polycrystalline photoelectrodes in order to establish the composition-morphology-photoelectrochemical property relationships while discovering highly efficient photoelectrode systems for use in solar energy conversion. Major achievements include: development of porous n-type BiVO{sub 4} photoanode for efficient and stable solar water oxidation; development of p-type CuFeO{sub 2} photocathode for solar hydrogen production; and junction studies on electrochemically fabricated p-n Cu{sub 2}O homojunction solar cells for efficiency enhancement.

  14. Properties of boron-doped thin films of polycrystalline silicon

    SciTech Connect

    Merabet, Souad

    2013-12-16

    The properties of polycrystalline-silicon films deposited by low pressure chemical vapor deposition and doped heavily in situ boron-doped with concentration level of around 2×10{sup 20}cm{sup −3} has been studied. Their properties are analyzed using electrical and structural characterization means by four points probe resistivity measurements and X-ray diffraction spectra. The thermal-oxidation process are performed on sub-micron layers of 200nm/c-Si and 200nm/SiO{sub 2} deposited at temperatures T{sub d} ranged between 520°C and 605°C and thermally-oxidized in dry oxygen ambient at 945°C. Compared to the as-grown resistivity with silicon wafers is known to be in the following sequence <ρ{sub 200nm/c−Si}> < <ρ{sub 200nm/SiO2}> and <ρ{sub 520}> < <ρ{sub 605}>. The measure X-ray spectra is shown, that the Bragg peaks are marked according to the crystal orientation in the film deposited on bare substrates (poly/c-Si), for the second series of films deposited on bare oxidized substrates (poly/SiO{sub 2}) are clearly different.

  15. Fluorine redistribution in a chemical vapor deposited tungsten/polycrystalline silicon gate structure during heat treatment

    NASA Astrophysics Data System (ADS)

    Eriksson, Th.; Carlsson, J.-O.; Keinonen, J.; Petersson, C. S.

    1988-09-01

    Fluorine redistribution during heat treatment of chemical vapor deposited tungsten/polycrystalline silicon gate structures was analyzed by the nuclear resonance broadening technique. The tungsten layer was deposited from a hydrogen/tungsten hexafluoride gas mixture. Upon heat treatment in the temperature range 1020-1325-K tungsten disilicide formation was observed using Rutherford backscattering spectrometry. In the as-deposited sample, the fluorine was accumulated at the tungsten/polycrystalline silicon interface. After silicide formation the fluorine was observed at the tungsten disilicide/polycrystalline silicon interface. At temperatures above 1120 K fluorine starts to diffuse through the polycrystalline silicon layer. A variation in the total fluorine content between the samples was also observed. The origin of the fluorine redistribution as well as the variation in the total fluorine content is discussed in connection to conceivable mechanisms.

  16. Fluorine redistribution in a chemical vapor deposited tungsten/polycrystalline silicon gate structure during heat treatment

    SciTech Connect

    Eriksson, T.; Carlsson, J.; Keinonen, J.; Petersson, C.S.

    1988-09-15

    Fluorine redistribution during heat treatment of chemical vapor deposited tungsten/polycrystalline silicon gate structures was analyzed by the nuclear resonance broadening technique. The tungsten layer was deposited from a hydrogen/tungsten hexafluoride gas mixture. Upon heat treatment in the temperature range 1020--1325-K tungsten disilicide formation was observed using Rutherford backscattering spectrometry. In the as-deposited sample, the fluorine was accumulated at the tungsten/polycrystalline silicon interface. After silicide formation the fluorine was observed at the tungsten disilicide/polycrystalline silicon interface. At temperatures above 1120 K fluorine starts to diffuse through the polycrystalline silicon layer. A variation in the total fluorine content between the samples was also observed. The origin of the fluorine redistribution as well as the variation in the total fluorine content is discussed in connection to conceivable mechanisms.

  17. Study of polycrystalline silicon obtained by aluminum-induced crystallization depending on process conditions

    NASA Astrophysics Data System (ADS)

    Pereyaslavtsev, Alexander; Sokolov, Igor; Sinev, Leonid

    2016-11-01

    In this paper, we have decided to consider an alternative method of producing polycrystalline silicon and study change of its electrophysical characteristics depending on process parameters. As an alternative low-pressure chemical vapor deposition method appears aluminum-induced crystallization (AIC), which allows to obtain a polycrystalline silicon film is significantly larger grain size, thereby reducing contribution of grain boundaries. A comprehensive study of polycrystalline silicon was carried out using a variety of microscopic (OM, SEM) and spectroscopic (RAMAN, XPS) and diffraction (EBSD, XRD) analytic methods. We also considered possibility of self-doping in AIC, result of which was obtained polycrystalline silicon with different resistance. Additionally considered changes in temperature coefficient of resistance depending on technological parameters of AIC process.

  18. Mechanisms limiting the performance of large grain polycrystalline silicon solar cells

    NASA Technical Reports Server (NTRS)

    Culik, J. S.; Alexander, P.; Dumas, K. A.; Wohlgemuth, J. W.

    1984-01-01

    The open-circuit voltage and short-circuit current of large-grain (1 to 10 mm grain diameter) polycrystalline silicon solar cells is determined by the minority-carrier diffusion length within the bulk of the grains. This was demonstrated by irradiating polycrystalline and single-crystal (Czochralski) silicon solar cells with 1 MeV electrons to reduce their bulk lifetime. The variation of short-circuit current with minority-carrier diffusion length for the polycrystalline solar cells is identical to that of the single-crystal solar cells. The open-circuit voltage versus short-circuit current characteristic of the polycrystalline solar cells for reduced diffusion lengths is also identical to that of the single-crystal solar cells. The open-circuit voltage of the polycrystalline solar cells is a strong function of quasi-neutral (bulk) recombination, and is reduced only slightly, if at all, by grain-boundary recombination.

  19. Highly Doped Polycrystalline Silicon Microelectrodes Reduce Noise in Neuronal Recordings In Vivo

    PubMed Central

    Saha, Rajarshi; Jackson, Nathan; Patel, Chetan; Muthuswamy, Jit

    2013-01-01

    The aims of this study are to 1) experimentally validate for the first time the nonlinear current-potential characteristics of bulk doped polycrystalline silicon in the small amplitude voltage regimes (0–200 μV) and 2) test if noise amplitudes (0–15 μV) from single neuronal electrical recordings get selectively attenuated in doped polycrystalline silicon microelectrodes due to the above property. In highly doped polycrystalline silicon, bulk resistances of several hundred kilo-ohms were experimentally measured for voltages typical of noise amplitudes and 9–10 kΩ for voltages typical of neural signal amplitudes (>150–200 μV). Acute multiunit measurements and noise measurements were made in n = 6 and n = 8 anesthetized adult rats, respectively, using polycrystalline silicon and tungsten microelectrodes. There was no significant difference in the peak-to-peak amplitudes of action potentials recorded from either microelectrode (p > 0.10). However, noise power in the recordings from tungsten microelectrodes (26.36 ± 10.13 pW) was significantly higher (p < 0.001) than the corresponding value in polycrystalline silicon microelectrodes (7.49 ± 2.66 pW). We conclude that polycrystalline silicon microelectrodes result in selective attenuation of noise power in electrical recordings compared to tungsten microelectrodes. This reduction in noise compared to tungsten microelectrodes is likely due to the exponentially higher bulk resistances offered by highly doped bulk polycrystalline silicon in the range of voltages corresponding to noise in multiunit measurements. PMID:20667815

  20. A microstrip silicon telescope for high performance particle tracking

    NASA Astrophysics Data System (ADS)

    Lietti, D.; Berra, A.; Prest, M.; Vallazza, E.

    2013-11-01

    Bent crystals are thin silicon/germanium devices that act as a bulk dipole magnet and thus are able to deflect relativistic charged particle beams with high efficiency (up to 98%). To study their behavior on extracted beamlines in terms of deflection capability and efficiency, a fast and high position resolution telescope is needed such as the INSULAB telescope. It consists in several modules equipped with double or single side silicon detectors readout by different ASICs. The Data Acquisition system is designed to work with pulsed beams minimizing the dead time to allow the collection of a large statistics in a short time. It is based on custom VME readout/memory boards for the data storage and 12 bit ADC custom boards for the signal digitization; the present maximum DAQ rate is 6 kHz. A detailed description of the detectors, the ASICs and the readout system together with the results obtained at the SPS H4 and PS T9 CERN beamlines in terms of spatial resolution and charge sharing are presented.

  1. High-performance silicon photonics technology for telecommunications applications.

    PubMed

    Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

    2014-04-01

    By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

  2. CVC silicon carbide high-performance optical systems

    NASA Astrophysics Data System (ADS)

    Fischer, William F., III; Foss, Colby A., Jr.

    2004-10-01

    The demand for high performance lightweight mirrors has never been greater. The coming years will require lighter and higher performance mirrors and in greater numbers than is currently available. Applications include both ground and space based telescopes, surveillance, navigation, guidance, and tracking and control systems. For instance, the total requirement for US government sponsored systems alone is projected to be greater than 200 m2/year1. Given that the total current global production capacity is on the order of 50 m2/year1, the need and opportunity to rapidly produce high quality optics is readily apparent. Key areas of concern for all these programs are not only the mission critical optical performance metrics, but also the ability to meet the timeline for deployment. As such, any potential reduction in the long lead times for manufactured optical systems and components is critical. The associated improvements with such advancements would lead to reductions in schedule and acquisition cost, as well as increased performance. Trex"s patented CVC SiC process is capable of rapidly producing high performance SiC optics for any optical system. This paper will summarize the CVC SiC production process and the current optical performance levels, as well as future areas of work.

  3. High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector

    PubMed Central

    Esmaeili-Rad, Mohammad R.; Salahuddin, Sayeef

    2013-01-01

    One important use of layered semiconductors such as molybdenum disulfide (MoS2) could be in making novel heterojunction devices leading to functionalities unachievable using conventional semiconductors. Here we demonstrate a metal-semiconductor-metal heterojunction photodetector, made of MoS2 and amorphous silicon (a-Si), with rise and fall times of about 0.3 ms. The transient response does not show persistent (residual) photoconductivity, unlike conventional a-Si devices where it may last 3–5 ms, thus making this heterojunction roughly 10X faster. A photoresponsivity of 210 mA/W is measured at green light, the wavelength used in commercial imaging systems, which is 2−4X larger than that of a-Si and best reported MoS2 devices. The device could find applications in large area electronics, such as biomedical imaging, where a fast response is critical. PMID:23907598

  4. Feeding of liquid silicon for high performance multicrystalline silicon with increased ingot height and homogenized resistivity

    NASA Astrophysics Data System (ADS)

    Krenckel, Patricia; Riepe, Stephan; Schindler, Florian; Strauch, Theresa

    2017-04-01

    Feeding of liquid silicon during the directional solidification process is a promising opportunity for cost reduction by increased throughput and improved material homogeneity due to constant resistivity over ingot height. In this work, a liquid feeding apparatus was developed for an industrial type directional solidification furnace. One n-type G2 sized High Performance multicrystalline ingot with liquid feeding of additional 14 kg of undoped silicon feedstock was crystallized. The resistivity was kept within a range of ±0.1 Ω cm of the target resistivity during the feeding sequence. A smaller mean grain area growth was observed during feeding, whereas the area fraction of recombination active dislocation structures was as low as in a reference ingot. Increased interstitial oxygen and substitutional carbon concentrations were measured for the ingot with liquid feeding. The measured mean bulk lifetime of 190 μs for passivated wafers in the feeding sequence can probably be increased by further pre-melting crucible improvements. For this laboratory experiment, energy reductions of 2% per wafer and time savings of 16% per wafer were realized.

  5. The effect of heat treatment on the resistivity of polycrystalline silicon films

    NASA Technical Reports Server (NTRS)

    Fripp, A. L., Jr.

    1975-01-01

    The resistivity of doped polycrystalline silicon films has been studied as a function of post deposition heat treatments in an oxidizing atmosphere. It was found that a short oxidation cycle may produce a resistivity increase as large as three orders of magnitude in the polycrystalline films. The extent of change was dependent on the initial resistivity and the films' doping level and was independent of the total oxidation time.

  6. High-performance fused indium gallium arsenide/silicon photodiode

    NASA Astrophysics Data System (ADS)

    Kang, Yimin

    Modern long haul, high bit rate fiber-optic communication systems demand photodetectors with high sensitivity. Avalanche photodiodes (APDs) exhibit superior sensitivity performance than other types of photodetectors by virtual of its internal gain mechanism. This dissertation work further advances the APD performance by applying a novel materials integration technique. It is the first successful demonstration of wafer fused InGaAs/Si APDs with low dark current and low noise. APDs generally adopt separate absorption and multiplication (SAM) structure, which allows independent optimization of materials properties in two distinct regions. While the absorption material needs to have high absorption coefficient in the target wavelength range to achieve high quantum efficiency, it is desirable for the multiplication material to have large discrepancy between its electron and hole ionization coefficients to reduce noise. According to these criteria, InGaAs and Si are the ideal materials combination. Wafer fusion is the enabling technique that makes this theoretical ideal an experimental possibility. APDs fabricated on the fused InGaAs/Si wafer with mesa structure exhibit low dark current and low noise. Special device fabrication techniques and high quality wafer fusion reduce dark current to nano ampere level at unity gain, comparable to state-of-the-art commercial III/V APDs. The small excess noise is attributed to the large difference in ionization coefficients between electrons and holes in silicon. Detailed layer structure designs are developed specifically for fused InGaAs/Si APDs based on principles similar to those used in traditional InGaAs/InP APDs. An accurate yet straightforward technique for device structural parameters extraction is also proposed. The extracted results from the fabricated APDs agree with device design parameters. This agreement also confirms that the fusion interface has negligible effect on electric field distributions for devices fabricated

  7. Depletion effect of polycrystalline-silicon gate electrode by phosphorus deactivation

    NASA Astrophysics Data System (ADS)

    Jeon, Woojin; Ahn, Ji-Hoon

    2017-01-01

    A study of the polycrystalline silicon depletion effect generated from the subsequent thermal process is undertaken. Although phosphorus out-diffusion, which causes the polycrystalline silicon depletion effect, is increased with an increase in the thermal process temperature, the polysilicon depletion effect is stronger when inducing rapid thermal annealing in lower temperatures of 600-800 °C than in 900 °C. This indicates that the major reason for the polysilicon depletion effect is not the out-diffusion of phosphorus but the electrical deactivation of phosphorus, which is segregated at the grain boundary. Therefore, by increasing the size of polycrystalline silicon grain, we can efficiently reduce the polysilicon depletion effect and enhance the tolerance to deactivation.

  8. The effects of intragrain defects on the local photoresponse of polycrystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Inoue, N.; Wilmsen, C. W.; Jones, K. A.

    1981-02-01

    Intragrain defects in Wacker cast and Monsanto zone-refined polycrystalline silicon materials were investigated using the electron-beam-induced current (EBIC) technique. The EBIC response maps were compared with etch pit, local diffusion length and local photoresponse measurements. It was determined that the Wacker polycrystalline silicon has a much lower density of defects than does the Monsanto polycrystalline silicon and that most of the defects in the Wacker material are not active recombination sites. A correlation was found between the recombination site density, as determined by EBIC, and the local diffusion length. It is shown that a large density of intragrain recombination sites greatly reduces the minority carrier diffusion length and thus can significantly reduce the photoresponse of solar cells.

  9. Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange

    SciTech Connect

    Antesberger, T.; Wassner, T. A.; Jaeger, C.; Algasinger, M.; Kashani, M.; Scholz, M.; Matich, S.; Stutzmann, M.

    2013-05-27

    Intentional boron and phosphorus doping of polycrystalline silicon thin films on glass prepared by the silver-induced layer exchange is presented. A silver/(titanium) oxide/amorphous silicon stack is annealed at temperatures below the eutectic temperature of the Ag/Si system, leading to a complete layer exchange and simultaneous crystallization of the amorphous silicon. Intentional doping of the amorphous silicon prior to the exchange process results in boron- or phosphorus-doped polycrystalline silicon. Hall effect measurements show carrier concentrations between 2 Multiplication-Sign 10{sup 17} cm{sup -3} and 3 Multiplication-Sign 10{sup 20} cm{sup -3} for phosphorus and 4 Multiplication-Sign 10{sup 18} cm{sup -3} to 3 Multiplication-Sign 10{sup 19} cm{sup -3} for boron-doped layers, with carrier mobilities up to 90 cm{sup 2}/V s.

  10. Recovery of cutting fluids used in polycrystalline silicon ingot slicing

    NASA Astrophysics Data System (ADS)

    Hecini, Mouna; Drouiche, Nadjib; Bouchelaghem, Ouahiba

    2016-11-01

    A recovery process for effective separation of silicon, silicon carbide micro powders and polyethylene glycol from the wire sawing slurry is proposed. The separation between silicon and silicon carbide is based on their size difference and surface charging state. The aim of this work is the study of the solid phase and liquid phase separation of silicon carbide and Silicon. Some methods applied for this purpose are the centrifugation process, phase-transfer separation as well as liquid-liquid extraction followed by the regeneration of polyethylene glycol by the distillation process. It is verified experimentally that silicon and silicon carbide micro powder can be effectively separated by phase transfer separation, centrifugation, chemical cleaning, filtering and distillation. In this study, the liquid-liquid extraction was used to separate a particle from a powder mixture. The removal of liquid component from a solution via a solvent separated considerably larger silicon carbide particles. The optimal results showed that Si content can reach 82% in the Si-rich powder and 3.8% wt% in the silicon carbide-rich powder. By separating the mixed powder the content reached 31.2 wt% of silicon, 63.3 wt% of silicon carbide as the raw material, 5.3 wt% of the iron fragment, and 0.2 wt% of other impurities.

  11. Process Research On Polycrystalline Silicon Material (PROPSM). [flat plate solar array project

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1983-01-01

    The performance-limiting mechanisms in large-grain (greater than 1 to 2 mm in diameter) polycrystalline silicon solar cells were investigated by fabricating a matrix of 4 sq cm solar cells of various thickness from 10 cm x 10 cm polycrystalline silicon wafers of several bulk resistivities. Analysis of the illuminated I-V characteristics of these cells suggests that bulk recombination is the dominant factor limiting the short-circuit current. The average open-circuit voltage of the polycrystalline solar cells is 30 to 70 mV lower than that of co-processed single-crystal cells; the fill-factor is comparable. Both open-circuit voltage and fill-factor of the polycrystalline cells have substantial scatter that is not related to either thickness or resistivity. This implies that these characteristics are sensitive to an additional mechanism that is probably spatial in nature. A damage-gettering heat-treatment improved the minority-carrier diffusion length in low lifetime polycrystalline silicon, however, extended high temperature heat-treatment degraded the lifetime.

  12. Polycrystalline silicon material availability and market pricing outlook study for 1980 to 88: January 1983 update

    NASA Technical Reports Server (NTRS)

    Costogue, E.; Pellin, R.

    1983-01-01

    Photovoltaic solar cell arrays which convert solar energy into electrical energy can become a cost effective, alternative energy source provided that an adequate supply of low priced materials and automated fabrication techniques are available. Presently, silicon is the most promising cell material for achieving the near term cost goals of the Photovoltaics Program. Electronic grade silicon is produced primarily for the semiconductor industry with the photovoltaic industry using, in most cases, the production rejects of slightly lower grade material. Therefore, the future availability of adequate supplies of low cost silicon is one of the major concerns of the Photovoltaic Program. The supply outlook for silicon with emphasis on pricing is updated and is based primarily on an industry survey conducted by a JPL consultant. This survey included interviews with polycrystalline silicon manufacturers, a large cross section of silicon users and silicon solar cell manufacturers.

  13. Poisson's ratio for polycrystalline silicon used in disk-shaped microresonators.

    PubMed

    Meitzler, Allen H

    2006-02-01

    Integrated circuit technology has been used to fabricate miniature disk resonators of polycrystalline silicon that operate at frequencies above 100 MHz. The ratios of low-order resonant frequencies in these resonators can be used to determine the value of Poisson's ratio and to confirm assumptions regarding homogeneity and isotropy.

  14. The properties of polycrystalline silicon solar cells with controlled titanium additions

    NASA Technical Reports Server (NTRS)

    Rohatgi, A.; Hopkins, R. H.; Davis, J. R., Jr.

    1981-01-01

    By coupling the results of electrical measurements, such as spectral response, lighted and dark I-V determinations, and deep-level-transient spectroscopy with optical and laser scan photomicroscopy, the effects of grain boundaries and impurities on silicon solar cells were evaluated. Titanium, which produces two deep levels in silicon, degrades cell performance by reducing bulk lifetime and thus cell short-circuit current. Electrically active grain boundaries induce carrier recombination in the bulk and depletion regions of the solar cell. Experimental data imply a small but measurable segregation of titanium into some grain boundaries of the polycrystalline silicon containing high Ti concentration. However, for the titanium-contaminated polycrystalline material used in this study, solar cell performance is dominated by the electrically active titanium concentration in the grains. Microstructural impacts on the devices are of secondary importance

  15. High efficiency polycrystalline silicon solar cells using low temperature PECVD process

    SciTech Connect

    Elgamel, H.E.A.

    1998-10-01

    Conventionally directionally solidified (DS) and silicon film (SF) polycrystalline silicon solar cells are fabricated using gettering and low temperature plasma enhanced chemical vapor deposition (PECVD) passivation. Thin layer ({approximately}10 nm) of PECVD SiO{sub 2} is used to passivate the emitter of the solar cell, while direct hydrogen rf plasma and PECVD silicon nitride (Si{sub 3}N{sub 4}) are implemented to provide emitter and bulk passivation. It is found in this work that hydrogen rf plasma can significantly improve the solar cell blue and long wavelength responses when it is performed through a thin layer of PECVD Si{sub 3}N{sub 4}. High efficiency DS and SF polycrystalline silicon solar cells have been achieved using a simple solar cell process with uniform emitter, Al/POCL{sub 3} gettering, hydrogen rf plasma/PECVD Si{sub 3}N{sub 4} and PECVD SiO{sub 2} passivation. On the other hand, a comprehensive experimental study of the characteristics of the PECVD Si{sub 3}N{sub 4} layer and its role in improving the efficiency of polycrystalline silicon solar cells is carried out in this paper. For the polycrystalline silicon used in this investigation, it is found that the PECVD Si{sub 3}N{sub 4} layer doesn`t provide a sufficient cap for the out diffusion of hydrogen at temperatures higher than 500 C. Low temperature ({le}400 C) annealing of the PECVD Si{sub 3}N{sub 4} provides efficient hydrogen bulk passivation, while higher temperature annealing relaxes the deposition induced stress and improves mainly the short wavelength (blue) response of the solar cells.

  16. Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature.

    PubMed

    Voyles, P M; Gerbi, J E; Treacy, M M; Gibson, J M; Abelson, J R

    2001-06-11

    Using fluctuation electron microscopy, we have observed an increase in the mesoscopic spatial fluctuations in the diffracted intensity from vapor-deposited silicon thin films as a function of substrate temperature from the amorphous to polycrystalline regimes. We interpret this increase as an increase in paracrystalline medium-range order in the sample. A paracrystal consists of topologically crystalline grains in a disordered matrix; in this model the increase in ordering is caused by an increase in the grain size or density. Our observations are counter to the previous belief that the amorphous to polycrystalline transition is a discontinuous disorder-order phase transition.

  17. Polycrystalline Silicon Sheets for Solar Cells by the Improved Spinning Method

    NASA Technical Reports Server (NTRS)

    Maeda, Y.; Yokoyama, T.; Hide, I.

    1984-01-01

    Cost reduction of silicon materials in the photovoltaic program of materials was examined. The current process of producing silicon sheets is based entirely on the conventional Czochralski ingot growth and wafering used in the semiconductor industry. The current technology cannot meet the cost reduction demands for producing low cost silicon sheets. Alternative sheet production processes such as unconventional crystallization are needed. The production of polycrystalline silicon sheets by unconventional ingot technology is the casting technique. Though large grain sheets were obtained by this technique, silicon ribbon growth overcomes deficiencies of the casting process by obtaining the sheet directly from the melt. The need to solve difficulties of growth stability and impurity effects are examined. The direct formation process of polycrystalline silicon sheets with large grain size, smooth surface, and sharp edges from the melt with a high growth rate which will yield low cost silicon sheets for solar cells and the photovoltaic characteristics associated with this type of sheet to include an EBIC study of the grain boundaries are described.

  18. Electron channeling and EBIC studies of polycrystalline silicon sheets

    SciTech Connect

    Tsuo, Y S; Matson, R J

    1984-05-01

    Electron channeling and EBIC studies have been performed on silicon sheets grown by the edge-supported pulling (ESP) and low-angle silicon sheet (LASS) processes. We have found that the dominant grain structure of the ESP sheets is long, narrow grains with surface normals oriented near (011); grains with this structure tend to have better electronic quality than random grains. We have also studied the twin-stabilized planar growth material of LASS sheets. This material, grown at 200 cm/sup 2//min, is essentially single-crystal.

  19. Defect engineering by ultrasound treatment in polycrystalline silicon

    SciTech Connect

    Ostapenko, S.; Jastrzebski, L.

    1995-08-01

    By applying ultrasound treatment (UST) to bulk and thin film polycrystalline Si (poly-Si) we have found a dramatic improvement of recombination and transport properties. The increasing of minority carrier lifetime by as much as one order of magnitude was found in short diffusion length regions, while exhibiting a strong dispersion for entire solar-grade poly-Si wafer. Relevant mechanisms are attributed to ultrasound processing on crystallographic defects, as well as UST stimulated dissociation of Fe-B pairs followed by Fe{sub i} gettering. A spectacular improvement of hydrogenation efficiency in poly-Si thin-films on glass substrate is demonstrated by resistivity study and confirmed using spatially resolved photoluminescence and nanoscale contact potential difference mapping. By applying UST to commercial solar cells we found the increasing of cell efficiency at low light excitation.

  20. Relationship between the blue response and open-circuit voltage of high performance silicon solar cells

    NASA Technical Reports Server (NTRS)

    Green, M. A.; Blakers, A. W.

    1983-01-01

    The relationship between the response at blue wavelengths and the open-circuit voltage of high performance silicon solar cells with a virtually 'transparent' emitter is analyzed. It is shown that a one-dimensional cell model cannot simultaneously model the optical collection properties and operating characteristics of such cells. The analysis highlights the importance of surface conditions and shows that previous conclusions regarding bounds on Auger coefficients imposed by correlating these parameters must be treated with caution.

  1. Printable nanostructured silicon solar cells for high-performance, large-area flexible photovoltaics.

    PubMed

    Lee, Sung-Min; Biswas, Roshni; Li, Weigu; Kang, Dongseok; Chan, Lesley; Yoon, Jongseung

    2014-10-28

    Nanostructured forms of crystalline silicon represent an attractive materials building block for photovoltaics due to their potential benefits to significantly reduce the consumption of active materials, relax the requirement of materials purity for high performance, and hence achieve greatly improved levelized cost of energy. Despite successful demonstrations for their concepts over the past decade, however, the practical application of nanostructured silicon solar cells for large-scale implementation has been hampered by many existing challenges associated with the consumption of the entire wafer or expensive source materials, difficulties to precisely control materials properties and doping characteristics, or restrictions on substrate materials and scalability. Here we present a highly integrable materials platform of nanostructured silicon solar cells that can overcome these limitations. Ultrathin silicon solar microcells integrated with engineered photonic nanostructures are fabricated directly from wafer-based source materials in configurations that can lower the materials cost and can be compatible with deterministic assembly procedures to allow programmable, large-scale distribution, unlimited choices of module substrates, as well as lightweight, mechanically compliant constructions. Systematic studies on optical and electrical properties, photovoltaic performance in experiments, as well as numerical modeling elucidate important design rules for nanoscale photon management with ultrathin, nanostructured silicon solar cells and their interconnected, mechanically flexible modules, where we demonstrate 12.4% solar-to-electric energy conversion efficiency for printed ultrathin (∼ 8 μm) nanostructured silicon solar cells when configured with near-optimal designs of rear-surface nanoposts, antireflection coating, and back-surface reflector.

  2. Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon

    DOEpatents

    Kaschmitter, James L.; Sigmon, Thomas W.

    1995-01-01

    A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby to amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenization can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

  3. Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon

    DOEpatents

    Kaschmitter, J.L.; Sigmon, T.W.

    1995-10-10

    A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby the amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenation can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

  4. Influence of Grain Structure and Doping on the Deformation and Fracture of Polycrystalline Silicon for MEMS/NEMS

    DTIC Science & Technology

    2012-08-01

    Champaign Influence of Grain Structure and Doping on the Deformation and Fracture of Polycrystalline Silicon for MEMS /NEMS AFOSR Grant # FA9550-09-1...thin films for MEMS and mechanical properties under open and short circuit conditions: They were the first data of their kind and have drawn interest by industry too. ...Structure and Doping on the Deformation and Fracture of Polycrystalline Silicon for MEMS /NEMS 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM

  5. Formation of polycrystalline-silicon films with hemispherical grains for capacitor structures with increased capacitance

    SciTech Connect

    Novak, A. V.

    2014-12-15

    The effect of formation conditions on the morphology of silicon films with hemispherical grains (HSG-Si) obtained by the method of low-pressure chemical vapor deposition (LPCVD) is investigated by atomic-force microscopy. The formation conditions for HSG-Si films with a large surface area are found. The obtained HSG-Si films make it possible to fabricate capacitor structures, the electric capacitance of which is twice as large in comparison to that of capacitors with “smooth” electrodes from polycrystalline silicon.

  6. Nano silver-catalyzed chemical etching of polycrystalline silicon wafer for solar cell application

    NASA Astrophysics Data System (ADS)

    Chen, S. R.; Liang, Z. C.; Wang, D. L.

    2016-03-01

    Silver nanoparticles were deposited on the surface of polycrystalline silicon wafer via vacuum thermal evaporation and metal-catalyzed chemical etching (MCCE) was conducted in a HF-H2O2 etching system. Treatment of the etched silicon wafer with HF transformed the textured structure on the surface from nanorods into nanocones. An etching time of 30 s and treatment with HF resulted in nanocones with uniform size distribution and a reflectivity as low as 1.98% across a spectral range from 300 to 1000 nm.

  7. Polycrystalline indium phosphide on silicon by indium assisted growth in hydride vapor phase epitaxy

    SciTech Connect

    Metaferia, Wondwosen; Sun, Yan-Ting Lourdudoss, Sebastian; Pietralunga, Silvia M.; Zani, Maurizio; Tagliaferri, Alberto

    2014-07-21

    Polycrystalline InP was grown on Si(001) and Si(111) substrates by using indium (In) metal as a starting material in hydride vapor phase epitaxy (HVPE) reactor. In metal was deposited on silicon substrates by thermal evaporation technique. The deposited In resulted in islands of different size and was found to be polycrystalline in nature. Different growth experiments of growing InP were performed, and the growth mechanism was investigated. Atomic force microscopy and scanning electron microscopy for morphological investigation, Scanning Auger microscopy for surface and compositional analyses, powder X-ray diffraction for crystallinity, and micro photoluminescence for optical quality assessment were conducted. It is shown that the growth starts first by phosphidisation of the In islands to InP followed by subsequent selective deposition of InP in HVPE regardless of the Si substrate orientation. Polycrystalline InP of large grain size is achieved and the growth rate as high as 21 μm/h is obtained on both substrates. Sulfur doping of the polycrystalline InP was investigated by growing alternating layers of sulfur doped and unintentionally doped InP for equal interval of time. These layers could be delineated by stain etching showing that enough amount of sulfur can be incorporated. Grains of large lateral dimension up to 3 μm polycrystalline InP on Si with good morphological and optical quality is obtained. The process is generic and it can also be applied for the growth of other polycrystalline III–V semiconductor layers on low cost and flexible substrates for solar cell applications.

  8. Oxygen-aided synthesis of polycrystalline graphene on silicon dioxide substrates.

    PubMed

    Chen, Jianyi; Wen, Yugeng; Guo, Yunlong; Wu, Bin; Huang, Liping; Xue, Yunzhou; Geng, Dechao; Wang, Dong; Yu, Gui; Liu, Yunqi

    2011-11-09

    We report the metal-catalyst-free synthesis of high-quality polycrystalline graphene on dielectric substrates [silicon dioxide (SiO(2)) or quartz] using an oxygen-aided chemical vapor deposition (CVD) process. The growth was carried out using a CVD system at atmospheric pressure. After high-temperature activation of the growth substrates in air, high-quality polycrystalline graphene is subsequently grown on SiO(2) by utilizing the oxygen-based nucleation sites. The growth mechanism is analogous to that of growth for single-walled carbon nanotubes. Graphene-modified SiO(2) substrates can be directly used in transparent conducting films and field-effect devices. The carrier mobilities are about 531 cm(2) V(-1) s(-1) in air and 472 cm(2) V(-1) s(-1) in N(2), which are close to that of metal-catalyzed polycrystalline graphene. The method avoids the need for either a metal catalyst or a complicated and skilled postgrowth transfer process and is compatible with current silicon processing techniques.

  9. A scalable silicon photonic chip-scale optical switch for high performance computing systems.

    PubMed

    Yu, Runxiang; Cheung, Stanley; Li, Yuliang; Okamoto, Katsunari; Proietti, Roberto; Yin, Yawei; Yoo, S J B

    2013-12-30

    This paper discusses the architecture and provides performance studies of a silicon photonic chip-scale optical switch for scalable interconnect network in high performance computing systems. The proposed switch exploits optical wavelength parallelism and wavelength routing characteristics of an Arrayed Waveguide Grating Router (AWGR) to allow contention resolution in the wavelength domain. Simulation results from a cycle-accurate network simulator indicate that, even with only two transmitter/receiver pairs per node, the switch exhibits lower end-to-end latency and higher throughput at high (>90%) input loads compared with electronic switches. On the device integration level, we propose to integrate all the components (ring modulators, photodetectors and AWGR) on a CMOS-compatible silicon photonic platform to ensure a compact, energy efficient and cost-effective device. We successfully demonstrate proof-of-concept routing functions on an 8 × 8 prototype fabricated using foundry services provided by OpSIS-IME.

  10. Silicon photonics-based laser system for high performance fiber sensing

    NASA Astrophysics Data System (ADS)

    Ayotte, S.; Faucher, D.; Babin, A.; Costin, F.; Latrasse, C.; Poulin, M.; G.-Deschênes, É.; Pelletier, F.; Laliberté, M.

    2015-09-01

    We present a compact four-laser source based on low-noise, high-bandwidth Pound-Drever-Hall method and optical phase-locked loops for sensing narrow spectral features. Four semiconductor external cavity lasers in butterfly packages are mounted on a shared electronics control board and all other optical functions are integrated on a single silicon photonics chip. This high performance source is compact, automated, robust, operates over a wide temperature range and remains locked for days. A laser to resonance frequency noise of 0.25 Hz/rt-Hz is demonstrated.

  11. Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films

    NASA Astrophysics Data System (ADS)

    Mitoma, Nobuhiko; Da, Bo; Yoshikawa, Hideki; Nabatame, Toshihide; Takahashi, Makoto; Ito, Kazuhiro; Kizu, Takio; Fujiwara, Akihiko; Tsukagoshi, Kazuhito

    2016-11-01

    The enhancement in electrical conductivity and optical transparency induced by a phase transition from amorphous to polycrystalline in lightly silicon-doped indium oxide (InSiO) thin films is studied. The phase transition caused by simple thermal annealing transforms the InSiO thin films from semiconductors to conductors. Silicon atoms form SiO4 tetrahedra in InSiO, which enhances the overlap of In 5s orbitals as a result of the distortion of InO6 octahedral networks. Desorption of weakly bonded oxygen releases electrons from deep subgap states and enhances the electrical conductivity and optical transparency of the films. Optical absorption and X-ray photoelectron spectroscopy measurements reveal that the phase transition causes a Fermi energy shift of ˜0.2 eV.

  12. Investigation of diffusion length distribution on polycrystalline silicon wafers via photoluminescence methods.

    PubMed

    Lou, Shishu; Zhu, Huishi; Hu, Shaoxu; Zhao, Chunhua; Han, Peide

    2015-09-14

    Characterization of the diffusion length of solar cells in space has been widely studied using various methods, but few studies have focused on a fast, simple way to obtain the quantified diffusion length distribution on a silicon wafer. In this work, we present two different facile methods of doing this by fitting photoluminescence images taken in two different wavelength ranges or from different sides. These methods, which are based on measuring the ratio of two photoluminescence images, yield absolute values of the diffusion length and are less sensitive to the inhomogeneity of the incident laser beam. A theoretical simulation and experimental demonstration of this method are presented. The diffusion length distributions on a polycrystalline silicon wafer obtained by the two methods show good agreement.

  13. 1/f noise in positive-negative-positive (PNP) polycrystalline silicon-emitter bipolar transistors

    NASA Astrophysics Data System (ADS)

    Hoque, Md Mazhar Ul; Celik-Butler, Zeynep; Trogolo, Joe; Weiser, Douglas; Green, Keith

    2005-04-01

    The origin of 1/f fluctuations in positive-negative-positive (PNP) polycrystalline silicon-emitter bipolar-junction transistors is described. The interfacial oxide (IFO) at the monosilicon-polycrystalline silicon interface is found to significantly affect the noise behavior. The low-frequency noise originates from two independent fluctuation mechanisms: in the diffusion and tunneling components of the base current noise power spectral density (SI_B) and from the diffusion current and carrier number fluctuations in the collector current noise power spectral density (SI_C). The Hooge noise parameters for electrons and holes are calculated from the diffusion fluctuation models for SI_B and SI_C, respectively. Noise measurements on devices with different sizes and different IFO thicknesses indicate that the fluctuations occur in the minority-carrier (electron) tunneling current component of SI_B through the IFO. The thickness of the IFO is estimated using this noise model. The tunneling fluctuations dominate over the diffusion fluctuations for the smaller (0.7×0.7μm2) transistors, while the opposite is the case for the larger (0.7×100μm2) ones. The scaling effect on the noise performance of these transistors is discussed. The effect of the IFO on the dc characteristics and the noise behavior of the PNP transistors is compared to that of the negative-positive-negative (NPN) counterparts on the same wafer.

  14. Advanced Micro-Polycrystalline Silicon Films Formed by Blue-Multi-Laser-Diode Annealing

    NASA Astrophysics Data System (ADS)

    Noguchi, Takashi; Chen, Yi; Miyahira, Tomoyuki; de Dieu Mugiraneza, Jean; Ogino, Yoshiaki; Iida, Yasuhiro; Sahota, Eiji; Terao, Motoyasu

    2010-03-01

    Semiconductor blue-multi-laser-diode annealing (BLDA) for amorphous Si film was performed to obtain a film containing uniform polycrystalline silicon (poly-Si) grains as a low temperature poly-Si (LTPS) process used for thin-film transistor (TFT). By adopting continuous wave (CW) mode at the 445 nm wavelength of the BLDA system, the light beam is efficiently absorbed into the thin amorphous silicon film of 50 nm thickness and can be crystallized stably. By adjusting simply the laser power below 6 W with controlled beam shape, the isotropic Si grains from uniform micro-grains to arbitral grain size of polycrystalline phase can be obtained with reproducible by fixing the scan speed at 500 mm/s. As a result of analysis using electron microscopy and atomic force microscopy (AFM), uniform distributed micro-poly-Si grains of smooth surface were observed at a power condition below 5 W and the preferred crystal orientation of (111) face was confirmed. As arbitral grain size can be obtained stably and reproducibly merely by controlling the laser power, BLDA is promising as a next-generation LTPS process for AM OLED panel including a system on glass (SoG).

  15. Ultrafast carrier dynamics and the role of grain boundaries in polycrystalline silicon thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Titova, Lyubov V.; Cocker, Tyler L.; Xu, Sijia; Baribeau, Jean-Marc; Wu, Xiaohua; Lockwood, David J.; Hegmann, Frank A.

    2016-10-01

    We have used time-resolved terahertz spectroscopy to study microscopic photoconductivity and ultrafast photoexcited carrier dynamics in thin, pure, non-hydrogenated silicon films grown by molecular beam epitaxy on quartz substrates at temperatures ranging from 335 °C to 572 °C. By controlling the growth temperature, thin silicon films ranging from completely amorphous to polycrystalline with minimal amorphous phase can be achieved. Film morphology, in turn, determines its photoconductive properties: in the amorphous phase, carriers are trapped in bandtail states on sub-picosecond time scales, while the carriers excited in crystalline grains remain free for tens of picoseconds. We also find that in polycrystalline silicon the photoexcited carrier mobility is carrier-density-dependent, with higher carrier densities mitigating the effects of grain boundaries on inter-grain transport. In a film grown at the highest temperature of 572 °C, the morphology changes along the growth direction from polycrystalline with needles of single crystals in the bulk of the film to small crystallites interspersed with amorphous silicon at the top of the film. Depth profiling using different excitation wavelengths shows corresponding differences in the photoconductivity: the photoexcited carrier lifetime and mobility are higher in the first 100-150 nm from the substrate, suggesting that thinner, low-temperature grown polycrystalline silicon films are preferable for photovoltaic applications.

  16. Polycrystalline silicon thin-film solar cells with plasmonic-enhanced light-trapping.

    PubMed

    Varlamov, Sergey; Rao, Jing; Soderstrom, Thomas

    2012-07-02

    One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach. The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles. To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 μm thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm(2), which can be increased up to 17-18 mA/cm(2) (~25% higher) after application of a simple diffuse back reflector made of a white paint. To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23°C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing

  17. Chromatographic performance of synthetic polycrystalline diamond as a stationary phase in normal phase high performance liquid chromatography.

    PubMed

    Peristyy, Anton; Paull, Brett; Nesterenko, Pavel N

    2015-04-24

    The chromatographic properties of high pressure high temperature synthesised diamond (HPHT) are investigated in normal phase mode of high performance liquid chromatography. Purified nonporous irregular shape particles of average particles size 1.2 μm and specific surface area 5.1 m(2) g(-1) were used for packing 100×4.6 mm ID or 50×4.6 mm ID stainless steel columns. The retention behaviour of several classes of compounds including alkyl benzenes, polyaromatic hydrocarbons (PAH), alkylphenylketones, phenols, aromatic acids and bases were studied using n-hexane-2-propanol mixtures as mobile phase. The results are compared with those observed for microdispersed sintered detonation nanodiamond (MSDN) and porous graphitic carbon (PGC). HPHT diamond revealed distinctive separation selectivity, which is orthogonal to that observed for porous graphitic carbon; while selectivities of HPHT diamond and microdispersed sintered detonation nanodiamonds are similar. Owing to non-porous particle nature, columns packed with high pressure high temperature diamond exhibited excellent mass transfer and produce separations with maximum column efficiency of 128,200 theoretical plates per meter.

  18. The effect of grain boundaries on the resistivity of polycrystalline silicon. Ph.D. Thesis - Va. Univ.

    NASA Technical Reports Server (NTRS)

    Fripp, A. L., Jr.

    1974-01-01

    The electrical resistivity of polycrystalline silicon films was investigated. The films were grown by the chemical vapor decomposition of silane on oxidized silicon wafers. The resistivity was found to be independent of dopant atom concentration in the lightly doped regions but was a strong function of dopant levels in the more heavily doped regions. A model, based on high dopant atom segregation in the grain boundaries, is proposed to explain the results.

  19. Adsorption of alkali metals and their effect on electronic properties of grain boundaries in bulk of polycrystalline silicon

    SciTech Connect

    Olimov, L. O.

    2010-05-15

    The adsorption of alkali metals and their effect on the electronic properties of grain boundaries in bulk of polycrystalline silicon has been studied experimentally. The results obtained show that the potential barrier grows during diffusion and adsorption of alkali metal atoms along grain boundaries.

  20. Effect of Alkaline pH on Polishing and Etching of Single and Polycrystalline Silicon

    NASA Astrophysics Data System (ADS)

    Venkatesh, R. Prasanna; Prasad, Y. Nagendra; Kwon, Tae-Young; Kang, Young-Jae; Park, Jin-Goo

    2012-07-01

    In this paper, the polishing and etching behavior of single and polycrystalline silicon were studied. Prior to chemical mechanical polishing (CMP) process, the surfaces were treated with dilute hydrofluoric acid (DHF) to remove native oxides. The surface analysis shows that the poly contains trace amount of oxygen even after DHF treatment. The static and dynamic etch rates, and removal rates were measured as a function of slurry pH. The single silicon showed a higher static etch rate than the poly. After static etch rate measurements, poly showed higher surface roughness and more hydrophilic which indicates that the surface of poly is different from single crystal silicon. The friction force between pad and substrate and pad temperature was also measured as a function of pH during polishing in order to get more understanding of polishing process. At all the pH values being investigated, poly showed lower dynamic and removal rates, higher friction force and higher temperature. This indicates that the removal of poly in CMP is predominantly by mechanical actions. Also, these results, suggest a mechanism in which the oxygen present in the poly grain boundaries strongly influences the etching and removal mechanism.

  1. High-performance, static-coated silicon microfabricated columns for gas chromatography.

    PubMed

    Reidy, Shaelah; Lambertus, Gordon; Reece, Jennifer; Sacks, Richard

    2006-04-15

    A procedure is described for the preparation of high-performance etched silicon columns for gas chromatography. Rectangular channels, 150 mum wide by 240 mum deep are fabricated in silicon substrates by gas-phase reactive ion etching. A 0.1-0.2-mum-thick film of dimethyl polysiloxane stationary phase is deposited on the channel walls by filling the channel with a dilute solution in 1:1 n-pentane and dichloromethane and pumping away the solvent. A thermally activated cross-linking agent is used for in situ cross-linking. A 3-m-long microfabricated column generated approximately 12 500 theoretical plates at optimal operating conditions using air as carrier gas. A kinetic model for the efficiency of rectangular cross-section columns is used to evaluate column performance. Results indicate an additional source of gas-phase dispersion beyond longitudinal diffusion and nonequilibrium effects, probably resulting from numerous turns in the gas flow path through the channel. The columns are thermally stable to at least 180 degrees C using air carrier gas. Temperature programming is demonstrated for the boiling point range from n-C5 to n-C12. A 3.0-m-long column heated at 10 degrees C/min obtains a peak capacity of over 100 peaks with a resolution of 1.18 and a separation time of approximately 500 s. With a 0.25-m-long column heated at 30 degrees C/min, a peak capacity of 28 peaks is obtained with a separation time of 150 s. Applications are shown for the analysis of air-phase petroleum hydrocarbons and the high-speed analysis of chemical warfare agent and explosive markers.

  2. Suppressing light reflection from polycrystalline silicon thin films through surface texturing and silver nanostructures

    SciTech Connect

    Akhter, Perveen; Huang, Mengbing Kadakia, Nirag; Spratt, William; Malladi, Girish; Bakhru, Hassarum

    2014-09-21

    This work demonstrates a novel method combining ion implantation and silver nanostructures for suppressing light reflection from polycrystalline silicon thin films. Samples were implanted with 20-keV hydrogen ions to a dose of 10¹⁷/cm², and some of them received an additional argon ion implant to a dose of 5×10¹⁵ /cm² at an energy between 30 and 300 keV. Compared to the case with a single H implant, the processing involved both H and Ar implants and post-implantation annealing has created a much higher degree of surface texturing, leading to a more dramatic reduction of light reflection from polycrystalline Si films over a broadband range between 300 and 1200 nm, e.g., optical reflection from the air/Si interface in the AM1.5 sunlight condition decreasing from ~30% with an untextured surface to below 5% for a highly textured surface after post-implantation annealing at 1000°C. Formation of Ag nanostructures on these ion beam processed surfaces further reduces light reflection, and surface texturing is expected to have the benefit of diminishing light absorption losses within large-size (>100 nm) Ag nanoparticles, yielding an increased light trapping efficiency within Si as opposed to the case with Ag nanostructures on a smooth surface. A discussion of the effects of surface textures and Ag nanoparticles on light trapping within Si thin films is also presented with the aid of computer simulations.

  3. Charge transport in polycrystalline silicon thin-films on glass substrates

    NASA Astrophysics Data System (ADS)

    Scheller, L.-P.; Nickel, N. H.

    2012-07-01

    Charge carrier transport in solid-phase crystallized polycrystalline silicon (poly-Si) was investigated as a function of the deposition temperature, Td, the amorphous starting material and the used substrates. The samples were characterized using temperature dependent transport measurements to determine the carrier concentration, mobility, and conductivity. Samples prepared on a-SiN:H covered borofloat glass exhibit a low carrier concentration that is independent of Td. In these samples, charge transport is dominated by intra-grain scattering mechanisms. In contrast, when poly-Si is prepared on corning glass, the carrier concentration shows an inverted U-shape behavior with increasing deposition temperature. The Hall mobility is thermally activated, which is consistent with thermionic carrier emission over potential energy barriers. The change of the activation energy with experimental parameters is accompanied by a large change of the exponential prefactor by more than 4 orders of magnitude. This is indicative of a Meyer-Neldel behavior. Moreover, at low temperatures, the conductivity deviates from an activated behavior indicating hopping transport with a mean hopping distance of ≈140 Å and an energy difference of ≈82 meV between the participating states. To derive insight into the underlying transport mechanisms and to determine information on barrier energy heights and grain-boundary defect-densities, the experimental data were analyzed employing transport models for polycrystalline materials.

  4. On properties of boundaries and electron conductivity in mesoscopic polycrystalline silicon films for memory devices

    SciTech Connect

    Berman, G.P.; Doolen, G.D.; Mainieri, R.; Rehacek, J.; Campbell, D.K.; Luchnikov, V.A.; Nagaev, K.E.

    1998-02-01

    The authors present the results of MD modeling on the structural properties of grain boundaries (GB) in thin polycrystalline films. The transition from crystalline boundaries with low mismatch angle to amorphous boundaries is investigated. It is shown that the structures of the GBs satisfy a thermodynamical criterion suggested in a cited reference. The potential energy of silicon atoms is closely related with a geometrical quantity -- tetragonality of their coordination with their nearest neighbors. A crossover of the length of localization is observed to analyze the crossover of the length of localization of the single electron states and properties of conductance of the thin polycrystalline film at low temperature. They use a two-dimensional Anderson localization model, with the random one site electron charging energy for a single grain (dot), random non-diagonal matrix elements, and random number of connections between the neighboring grains. The results on the crossover behavior of localization length of the single electron states and characteristic properties of conductance are presented in the region of parameters where the transition from an insulator to a conductor regimes takes place.

  5. High sheet resistance, arsenic implanted polycrystalline silicon for integrated circuit resistors

    NASA Astrophysics Data System (ADS)

    Schubert, W. K.

    1984-11-01

    The electrical properties of high sheet resistance polycrystalline silicon were investigated to facilitate its use in fabricating integrated circuit resistors. The effects of ion implantation dose, energy and annealing procedures were studied. Sheet resistances ranging from 10(2) to 10(9) omega/square were produced. A double depletion layer, thermionic emission model for electrical transport across grain boundaries accounts for many of the electrical properties, including the correlation of high activation energies with high sheet resistances. A reverse annealing peak in the sheet resistance is found for annealing temperatures between 800 and 1100 C. This irreversible effect is stronger in more lightly doped samples. The final sheet resistance value is primarily determined by the implantation dose and the highest processing temperature used.

  6. Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing

    SciTech Connect

    Machida, Emi; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ikenoue, Hiroshi

    2012-12-17

    We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 {mu}m, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

  7. Graphitization of n-type polycrystalline silicon carbide for on-chip supercapacitor application

    NASA Astrophysics Data System (ADS)

    Liu, Fang; Gutes, Albert; Laboriante, Ian; Carraro, Carlo; Maboudian, Roya

    2011-09-01

    Synthesis of silicon carbide-derived carbon films with excellent supercapacitor characteristics is demonstrated by a process that is fully compatible with standard microfabrication technology. NiTi alloy deposited on nitrogen-doped polycrystalline SiC films is shown to result in the growth of a rough, porous, high conductivity, nanocrystalline graphitic carbon film upon rapid thermal annealing to 1050 °C. Electrodes fabricated in this manner exhibit high charge/discharge rates with a time constant of about 0.062 s. Analysis shows that the incorporated nitrogen in the carbon electrode may induce pseudo-capacitance, and the electrodes exhibit the capacitance/area values comparable to those reported on carbon nanotube-based supercapacitors.

  8. Schottky Barrier Thin Film Transistor (SB-TFT) on low-temperature polycrystalline silicon

    NASA Astrophysics Data System (ADS)

    De Iacovo, A.; Ferrone, A.; Colace, L.; Minotti, A.; Maiolo, L.; Pecora, A.

    2016-12-01

    We report on the fabrication and characterization of Schottky barrier transistors on polycrystalline silicon. The transistors were realized exploiting Cr-Si and Ti-Si Schottky barrier with a low thermal budget process, compatible with polymeric, ultraflexible substrates. We obtained devices with threshold voltages as low as 1.7 V (for n channel) and 4 V (for p channel) with channel lengths ranging from 2 to 40 μm. Resulting on/off ratios are as high as 5 · 103. The devices showed threshold voltages and subthreshold slopes comparable with already published N- and P-MOS devices realized with the same process on polyimide substrates thus representing a cheaper and scalable alternative to ultraflexible transistors with doped source and drain.

  9. Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing.

    PubMed

    Machida, Emi; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ikenoue, Hiroshi

    2012-12-17

    We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 μm, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

  10. Enhancement of polycrystalline silicon solar cells efficiency using indium nitride particles

    NASA Astrophysics Data System (ADS)

    Alkis, Sabri; Imtiaz Chowdhury, Farsad; Alevli, Mustafa; Dietz, Nikolaus; Yalızay, Berna; Aktürk, Selçuk; Nayfeh, Ammar; Kemal Okyay, Ali

    2015-10-01

    In this work, we present a hybrid indium nitride particle/polycrystalline silicon solar cell based on 230 nm size indium nitride particles (InN-Ps) obtained through laser ablation. The solar cell performance measurements indicate that there is an absolute 1.5% increase (Δη) in the overall solar cell efficiency due to the presence of InN-Ps. Within the spectral range 300-1100 nm, improvements of up to 8.26% are observed in the external quantum efficiency (EQE) and increases of up to 8.75% are observed in the internal quantum efficiency (IQE) values of the corresponding solar cell. The enhancement in power performance is due to the down-shifting properties of the InN-Ps. The electrical measurements are supplemented by TEM, Raman, UV/VIS and PL spectroscopy of the InN-Ps.

  11. Modeling and simulation of temperature effect in polycrystalline silicon PV cells

    NASA Astrophysics Data System (ADS)

    Marcu, M.; Niculescu, T.; Slusariuc, R. I.; Popescu, F. G.

    2016-06-01

    Due to the human needs of energy, there is a need to apply new technologies in energy conversion to supply the demand of clean and cheap energy in the context of environmental issues. Renewable energy sources like solar energy has one of the highest potentials. In this paper, solar panel is the key part of a photovoltaic system which converts solar energy to electrical energy. The purpose of this paper is to give a MATLAB/ Simulink simulation for photovoltaic module based on the one-diode model of a photovoltaic cell made of polycrystalline silicon. This model reveals the effect of the ambient temperature and the heating of the panel due to the solar infrared radiation. Also the measurements on the solar cell exposed to solar radiation can confirm the simulation.

  12. Design Procedure and Fabrication of Reproducible Silicon Vernier Devices for High-Performance Refractive Index Sensing

    PubMed Central

    Troia, Benedetto; Khokhar, Ali Z.; Nedeljkovic, Milos; Reynolds, Scott A.; Hu, Youfang; Mashanovich, Goran Z.; Passaro, Vittorio M. N.

    2015-01-01

    In this paper, we propose a generalized procedure for the design of integrated Vernier devices for high performance chemical and biochemical sensing. In particular, we demonstrate the accurate control of the most critical design and fabrication parameters of silicon-on-insulator cascade-coupled racetrack resonators operating in the second regime of the Vernier effect, around 1.55 μm. The experimental implementation of our design strategies has allowed a rigorous and reliable investigation of the influence of racetrack resonator and directional coupler dimensions as well as of waveguide process variability on the operation of Vernier devices. Figures of merit of our Vernier architectures have been measured experimentally, evidencing a high reproducibility and a very good agreement with the theoretical predictions, as also confirmed by relative errors even lower than 1%. Finally, a Vernier gain as high as 30.3, average insertion loss of 2.1 dB and extinction ratio up to 30 dB have been achieved. PMID:26067193

  13. Hierarchical micro & mesoporous silicon carbide flakes for high-performance electrochemical capacitive energy storage

    NASA Astrophysics Data System (ADS)

    Kim, Myeongjin; Oh, Ilgeun; Kim, Jooheon

    2016-03-01

    Hierarchical micro/mesoporous silicon carbide flakes (SiCF) with a high surface area of about 1376 m2 g-1 are obtained by one-step carbonization of waste Si wafer without any chemical or physical activation. The micropores are derived from the partial evaporation of Si atoms during the carbonization process and mesopores are formed by the integration of neighboring micropores. During carbonization process, the proportion of micro and mesopores in SiCF can be controlled by carbonization time by controlling the amount of partial evaporation of Si atoms. The SiCF electrode carbonized for 8 h at 1250 °C exhibits high charge storage capacity with a specific capacitance of 203.7 F g-1 at a scan rate of 5 mV s-1 with 87.3% rate performance from 5 to 500 mV s-1 in 1 M KCl aqueous electrolyte. The outstanding electrochemical performance can be the synergistic effect of both enhanced electric double layer properties caused by micropores and reduced resistant pathways for ions diffusion in the pores as well as a large accessible surface area for ion transport/charge storage caused by mesopores. These encouraging results demonstrate that the SiCF carbonized for 8 h at 1250 °C can be promising candidate for high performance electrode materials for supercapacitors.

  14. Design Procedure and Fabrication of Reproducible Silicon Vernier Devices for High-Performance Refractive Index Sensing.

    PubMed

    Troia, Benedetto; Khokhar, Ali Z; Nedeljkovic, Milos; Reynolds, Scott A; Hu, Youfang; Mashanovich, Goran Z; Passaro, Vittorio M N

    2015-06-10

    In this paper, we propose a generalized procedure for the design of integrated Vernier devices for high performance chemical and biochemical sensing. In particular, we demonstrate the accurate control of the most critical design and fabrication parameters of silicon-on-insulator cascade-coupled racetrack resonators operating in the second regime of the Vernier effect, around 1.55 μm. The experimental implementation of our design strategies has allowed a rigorous and reliable investigation of the influence of racetrack resonator and directional coupler dimensions as well as of waveguide process variability on the operation of Vernier devices. Figures of merit of our Vernier architectures have been measured experimentally, evidencing a high reproducibility and a very good agreement with the theoretical predictions, as also confirmed by relative errors even lower than 1%. Finally, a Vernier gain as high as 30.3, average insertion loss of 2.1 dB and extinction ratio up to 30 dB have been achieved.

  15. Valley-engineered ultra-thin silicon for high-performance junctionless transistors

    PubMed Central

    Kim, Seung-Yoon; Choi, Sung-Yool; Hwang, Wan Sik; Cho, Byung Jin

    2016-01-01

    Extremely thin silicon show good mechanical flexibility because of their 2-D like structure and enhanced performance by the quantum confinement effect. In this paper, we demonstrate a junctionless FET which reveals a room temperature quantum confinement effect (RTQCE) achieved by a valley-engineering of the silicon. The strain-induced band splitting and a quantum confinement effect induced from ultra-thin-body silicon are the two main mechanisms for valley engineering. These were obtained from the extremely well-controlled silicon surface roughness and high tensile strain in silicon, thereupon demonstrating a device mobility increase of ~500% in a 2.5 nm thick silicon channel device. PMID:27389874

  16. Evolution of grain structure and recombination active dislocations in extraordinary tall conventional and high performance multi-crystalline silicon ingots

    NASA Astrophysics Data System (ADS)

    Trempa, M.; Kupka, I.; Kranert, C.; Lehmann, T.; Reimann, C.; Friedrich, J.

    2017-02-01

    In this work one high performance multi-crystalline silicon ingot and one conventional multi-crystalline silicon ingot, each with an extraordinary ingot height of 710 mm, were replicated by the successive growth of eight G1 ingots to evaluate the potential advantage of extraordinary tall HPM ingots in industrial production. By analyzing different grain structure parameters like mean grain size, grain orientation and grain boundary type distribution as well as the recombination active dislocation area over the complete ingot height, it was observed that the material properties strongly differ in the initial state of growth for the two material types. However, at ingot heights above 350 mm, the difference has vanished and the grain structure properties for both materials appear similar. It is shown that the evolution of the grain structure in both material types can be explained by the same grain selection and grain boundary generation/annihilation mechanisms whereas the current grain structure determines which mechanisms are the most dominant at a specific ingot height. Since the grain structure directly influences the dislocation content in the silicon material, also the recombination active dislocation area becomes equal in high performance and conventional multi-crystalline silicon material at ingot heights above 350 mm. From these results it is concluded that the advantage of high performance silicon material is limited to the first grown 350 mm of the ingot.

  17. Polycrystalline silicon ring resonator photodiodes in a bulk complementary metal-oxide-semiconductor process.

    PubMed

    Mehta, Karan K; Orcutt, Jason S; Shainline, Jeffrey M; Tehar-Zahav, Ofer; Sternberg, Zvi; Meade, Roy; Popović, Miloš A; Ram, Rajeev J

    2014-02-15

    We present measurements on resonant photodetectors utilizing sub-bandgap absorption in polycrystalline silicon ring resonators, in which light is localized in the intrinsic region of a p+/p/i/n/n+ diode. The devices, operating both at λ=1280 and λ=1550  nm and fabricated in a complementary metal-oxide-semiconductor (CMOS) dynamic random-access memory emulation process, exhibit detection quantum efficiencies around 20% and few-gigahertz response bandwidths. We observe this performance at low reverse biases in the range of a few volts and in devices with dark currents below 50 pA at 10 V. These results demonstrate that such photodetector behavior, previously reported by Preston et al. [Opt. Lett. 36, 52 (2011)], is achievable in bulk CMOS processes, with significant improvements with respect to the previous work in quantum efficiency, dark current, linearity, bandwidth, and operating bias due to additional midlevel doping implants and different material deposition. The present work thus offers a robust realization of a fully CMOS-fabricated all-silicon photodetector functional across a wide wavelength range.

  18. Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

    PubMed Central

    Varlamov, Sergey; Rao, Jing; Soderstrom, Thomas

    2012-01-01

    One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach. The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles. To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 μm thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm2, which can be increased up to 17-18 mA/cm2 (~25% higher) after application of a simple diffuse back reflector made of a white paint. To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23°C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing

  19. Molybdenum Silicide Formation on Single Crystal, Polycrystalline and Amorphous Silicon: Growth, Structure and Electrical Properties

    NASA Astrophysics Data System (ADS)

    Doland, Charles Michael

    The solid state reactions that occur between a thin metal film and a silicon substrate are of scientific and technological interest. The initial interactions are poorly understood, yet the final state may critically depend on the initial interactions. In this work, the reactions of thin molybdenum films on amorphous, polycrystalline, and single crystal silicon substrates were studied, with an emphasis on the initial interdiffusion and the nucleation of the crystalline silicide phase. Our research was carried out in an ultrahigh vacuum (UHV) system in order to minimize effects of contaminants. In situ Raman scattering and Auger electron spectroscopy were used to probe the structure and composition of the films. Electron microscopy, low energy electron diffraction and Schottky barrier height measurements were used to obtain additional information. The hexagonal phase of the disilicide (h-MoSi _2) is the first phase formed. This occurs after 30 minute annealing at 400^ circC on clean samples. Impurities interfere with this reaction, but substrate crystallinity has no effect. The hexagonal phase transforms to the tetragonal phase (t-MoSi_2) after 800 ^circC annealing for all substrate types. Contamination retards this reaction, resulting in films containing both phases. For the thin films in this study, the transformation to t-MoSi_2 is accompanied by agglomeration of the films. From bulk thermodynamics, t-MoSi_2 is expected to be the first phase formed, but h -MoSi_2 is the first phase observed. This phase nucleates before t-MoSi_2, due to a lower silicide-silicon interfacial energy. Detailed knowledge of interfacial energies and effects of impurities are required to understand the initial phases of thin film solid state reactions.

  20. Mesoporous Silicon Sponge as an Anti-Pulverization Structure for High-Performance Lithium-ion Battery Anodes

    SciTech Connect

    Li, Xiaolin; Gu, Meng; Hu, Shenyang Y.; Kennard, Rhiannon; Yan, Pengfei; Chen, Xilin; Wang, Chong M.; Sailor, Michael J.; Zhang, Jiguang; Liu, Jun

    2014-07-08

    Nanostructured silicon is a promising anode material for high performance lithium-ion batteries, yet scalable synthesis of such materials, and retaining good cycling stability in high loading electrode remain significant challenges. Here, we combine in-situ transmission electron microscopy and continuum media mechanical calculations to demonstrate that large (>20 micron) mesoporous silicon sponge (MSS) prepared by the scalable anodization method can eliminate the pulverization of the conventional bulk silicon and limit particle volume expansion at full lithiation to ~30% instead of ~300% as observed in bulk silicon particles. The MSS can deliver a capacity of ~750 mAh/g based on the total electrode weight with >80% capacity retention over 1000 cycles. The first-cycle irreversible capacity loss of pre-lithiated MSS based anode is only <5%. The insight obtained from MSS also provides guidance for the design of other materials that may experience large volume variation during operations.

  1. Low temperature deposition of polycrystalline silicon thin films on a flexible polymer substrate by hot wire chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lee, Sang-hoon; Jung, Jae-soo; Lee, Sung-soo; Lee, Sung-bo; Hwang, Nong-moon

    2016-11-01

    For the applications such as flexible displays and solar cells, the direct deposition of crystalline silicon films on a flexible polymer substrate has been a great issue. Here, we investigated the direct deposition of polycrystalline silicon films on a polyimide film at the substrate temperature of 200 °C. The low temperature deposition of crystalline silicon on a flexible substrate has been successfully made based on two ideas. One is that the Si-Cl-H system has a retrograde solubility of silicon in the gas phase near the substrate temperature. The other is the new concept of non-classical crystallization, where films grow by the building block of nanoparticles formed in the gas phase during hot-wire chemical vapor deposition (HWCVD). The total amount of precipitation of silicon nanoparticles decreased with increasing HCl concentration. By adding HCl, the amount and the size of silicon nanoparticles were reduced remarkably, which is related with the low temperature deposition of silicon films of highly crystalline fraction with a very thin amorphous incubation layer. The dark conductivity of the intrinsic film prepared at the flow rate ratio of RHCl=[HCl]/[SiH4]=3.61 was 1.84×10-6 Scm-1 at room temperature. The Hall mobility of the n-type silicon film prepared at RHCl=3.61 was 5.72 cm2 V-1s-1. These electrical properties of silicon films are high enough and could be used in flexible electric devices.

  2. Two-stage metal-catalyst-free growth of high-quality polycrystalline graphene films on silicon nitride substrates.

    PubMed

    Chen, Jianyi; Guo, Yunlong; Wen, Yugeng; Huang, Liping; Xue, Yunzhou; Geng, Dechao; Wu, Bin; Luo, Birong; Yu, Gui; Liu, Yunqi

    2013-02-20

    By using two-stage, metal-catalyst-free chemical vapor deposition (CVD), it is demonstrated that high-quality polycrystalline graphene films can directly grow on silicon nitride substrates. The carrier mobility can reach about 1500 cm(2) V(-1) s(-1) , which is about three times the value of those grown on SiO(2) /Si substrates, and also is better than some examples of metal-catalyzed graphene, reflecting the good quality of the graphene lattice.

  3. Noise Characterization of Polycrystalline Silicon Thin Film Transistors for X-ray Imagers Based on Active Pixel Architectures.

    PubMed

    Antonuk, L E; Koniczek, M; McDonald, J; El-Mohri, Y; Zhao, Q; Behravan, M

    2008-01-01

    An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring how the 1/f, shot and thermal noise components of poly-Si TFTs, determined from current noise power spectral density measurements, as well as through calculation, can be used to assist in the development of imagers incorporating pixel amplification circuits based on such transistors.

  4. Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

    SciTech Connect

    Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin

    2014-11-10

    High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles.

  5. Propagation losses in undoped and n-doped polycrystalline silicon wire waveguides.

    PubMed

    Zhu, Shiyang; Fang, Q; Yu, M B; Lo, G Q; Kwong, D L

    2009-11-09

    Polycrystalline silicon (polySi) wire waveguides with width ranging from 200 to 500 nm are fabricated by solid-phase crystallization (SPC) of deposited amorphous silicon (a-Si) on SiO(2) at a maximum temperature of 1000 degrees C. The propagation loss at 1550 nm decreases from 13.0 to 9.8 dB/cm with the waveguide width shrinking from 500 to 300 nm while the 200-nm-wide waveguides exhibit quite large loss (>70 dB/cm) mainly due to the relatively rough sidewall of waveguides induced by the polySi dry etch. By modifying the process sequence, i.e., first patterning the a-Si layer into waveguides by dry etch and then SPC, the sidewall roughness is significantly improved but the polySi crystallinity is degraded, leading to 13.9 dB/cm loss in the 200-nm-wide waveguides while larger losses in the wider waveguides. Phosphorus implantation causes an additional loss in the polySi waveguides. The doping-induced optical loss increases relatively slowly with the phosphorus concentration increasing up to 1 x 10(18) cm(-3), whereas the 5 x 10(18) cm(-3) doped waveguides exhibit large loss due to the dominant free carrier absorption. For all undoped polySi waveguides, further 1-2 dB/cm loss reduction is obtained by a standard forming gas (10%H(2) + 90%N(2)) annealing owing to the hydrogen passivation of Si dangling bonds present in polySi waveguides, achieving the lowest loss of 7.9 dB/cm in the 300-nm-wide polySi waveguides. However, for the phosphorus doped polySi waveguides, the propagation loss is slightly increased by the forming gas annealing.

  6. Method to extract diffusion length from solar cell parameters—Application to polycrystalline silicon

    NASA Astrophysics Data System (ADS)

    Taretto, K.; Rau, U.; Werner, J. H.

    2003-05-01

    A closed form, analytical expression for the interdependence of the effective diffusion length Leff and the open-circuit voltage of solar cells is derived for the parallel connection of recombination in the space-charge region and in the neutral base region. This expression allows for the calculation of Leff from the open-circuit voltage, the short-circuit current, and the base doping of the solar cell as the only quantities that need to be determined experimentally. Values of Leff calculated with our method match with an accuracy of 35% values that are determined experimentally by quantum-efficiency measurements of silicon solar cells. The agreement holds in a range 0.3 μm polycrystalline silicon solar cells covering grain sizes from 10-2 to 104 μm. We calculate Leff for these solar cells with our method and interpret the results in terms of grain-boundary recombination velocity SGB. We find that the data points split into two distinct groups, one with 105 cm/s

  7. Thin film polycrystalline silicon: Promise and problems in displays and solar cells

    SciTech Connect

    Fonash, S.J.

    1995-08-01

    Thin film polycrystalline Si (poly-Si) with its carrier mobilities, potentially good stability, low intragrain defect density, compatibility with silicon processing, and ease of doping activation is an interesting material for {open_quotes}macroelectronics{close_quotes} applications such as TFTs for displays and solar cells. The poly-Si films needed for these applications can be ultra-thin-in the 500{Angstrom} to 1000{Angstrom} thickness range for flat panel display TFTs and in the 4{mu}m to 10{mu}m thickness range for solar cells. Because the films needed for these microelectronics applications can be so thin, an effective approach to producing the films is that of crystallizing a-Si precursor material. Unlike cast materials, poly-Si films made this way can be produced using low temperature processing. Unlike deposited poly-Si films, these crystallized poly-Si films can have grain widths that are much larger than the film thickness and almost atomically smooth surfaces. This thin film poly-Si crystallized from a-Si precursor films, and its promise and problems for TFTs and solar cells, is the focus of this discussion.

  8. GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE.

    PubMed

    Ikejiri, Keitaro; Ishizaka, Fumiya; Tomioka, Katsuhiro; Fukui, Takashi

    2013-03-22

    The growth mechanism of GaAs nanowires (NWs) grown on polycrystalline silicon (poly-Si) thin films using selective-area metalorganic vapor-phase epitaxy was investigated. Wire structures were selectively grown in the mask openings on a poly-Si substrate. The appearance ratio of wire structures strongly depended on the growth conditions and deposition temperature of the poly-Si substrate. Evaluation of the grown shapes and growth characteristics revealed that GaAs NWs grown on a poly-Si substrate have the same growth mechanism as conventional GaAs NWs grown on a single-crystalline GaAs or Si substrate. Experiments showed that the wire structure yield can be improved by increasing the Si grain size and/or increasing the Si deposition temperature. The growth model proposed for understanding NW growth on poly-Si is based on the mask opening size, the Si grain size, and the growth conditions. The ability to control the growth mode is promising for the formation of NWs with complex structures on poly-Si thin layers.

  9. A study of photovoltaic loss-mechanisms due to defects and grain boundaries in polycrystalline silicon

    NASA Astrophysics Data System (ADS)

    Sopori, B. L.

    1980-01-01

    Various photovoltaic loss mechanisms associated with defects and grain boundaries (gbs) in polycrystalline silicon have been experimentally studied. Analysis was carried out on two types of substrates/cells viz. Wacker Silso and laser-crystallized RTR ribbons. Solar cells were fabricated on selected regions of the substrates and their characteristics related to the substrate structure. Mechanisms related to photovoltaic losses are divided into two categories: electronic and physical. Parameters describing electronic loss mechanisms, such as changes in minority carrier diffusion length, dark current and local photo-current losses were measured, and their dependence on density and type of defects was determined. A variety of analytical techniques were used for this study. These include I-V characterization of solar cells, I-V characterization of gbs, and light intensity dependences of some material parameters. Loss mechanisms associated with physical effects are defect-defect and impurity-defect interactions. It is shown that physical effects such as impurity segregation and defect annihilation can lead to significant loss/gain in photovoltaic characteristics.

  10. On-Current Modeling of Polycrystalline Silicon Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Gupta, Navneet; Tyagi, B. P.

    2005-01-01

    We propose an on-current (above threshold voltage) model of polycrystalline silicon thin-film transistors (poly-Si TFTs). The model includes the study of the effect of trap state density, poly-Si inversion layer thickness and temperature on the TFT characteristics. Effective carrier mobility and I-V characteristics are described by considering the mechanism of capture and release of carriers at grain boundary trap states and the thermionic emission theory. It is found that at low as well as at high doping concentrations, the effective carrier mobility (µeff) increases with increasing temperature whereas a dip is observed at intermediate doping concentration. At very high and very low doping concentration the effect of temperature on the mobility is found to be almost negligible. Calculations reveal that effective carrier mobility and drain current increase as the gate bias increases and are larger for a lower trap state density. The calculated value of activation energy decreases as the gate bias increases and is larger for a larger poly-Si inversion layer thickness. A comparison between the present predictions and the experimental results shows reasonably good agreement.

  11. Synthesis and characterization of large-grain solid-phase crystallized polycrystalline silicon thin films

    SciTech Connect

    Kumar, Avishek E-mail: dalapatig@imre.a-star.edu.sg; Law, Felix; Widenborg, Per I.; Dalapati, Goutam K. E-mail: dalapatig@imre.a-star.edu.sg; Subramanian, Gomathy S.; Tan, Hui R.; Aberle, Armin G.

    2014-11-01

    n-type polycrystalline silicon (poly-Si) films with very large grains, exceeding 30 μm in width, and with high Hall mobility of about 71.5 cm{sup 2}/V s are successfully prepared by the solid-phase crystallization technique on glass through the control of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The effect of this gas flow ratio on the electronic and structural quality of the n-type poly-Si thin film is systematically investigated using Hall effect measurements, Raman microscopy, and electron backscatter diffraction (EBSD), respectively. The poly-Si grains are found to be randomly oriented, whereby the average area weighted grain size is found to increase from 4.3 to 18 μm with increase of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The stress in the poly-Si thin films is found to increase above 900 MPa when the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio is increased from 0.025 to 0.45. Finally, high-resolution transmission electron microscopy, high angle annular dark field-scanning tunneling microscopy, and EBSD are used to identify the defects and dislocations caused by the stress in the fabricated poly-Si films.

  12. A high performance three-phase enzyme electrode based on superhydrophobic mesoporous silicon nanowire arrays for glucose detection.

    PubMed

    Xu, Chenlong; Song, Zhiqian; Xiang, Qun; Jin, Jian; Feng, Xinjian

    2016-04-14

    We describe here a high performance oxygen-rich three-phase enzyme electrode based on superhydrophobic mesoporous silicon nanowire arrays for glucose detection. We demonstrate that its linear detection upper limit is 30 mM, more than 15 times higher than that can be obtained on the normal enzyme-electrode. Notably, the three-phase enzyme electrode output is insensitive to the significant oxygen level fluctuation in analyte solution.

  13. Applications of ion implantation to high performance, radiation tolerant silicon solar cells

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, A. R.; Minnucci, J. A.; Matthei, K. W.

    1979-01-01

    Progress in the development of ion implanted silicon solar cells is reported. Effective back surface preparation by implantation, junction processing to achieve high open circuit voltages in low-resistivity cells, and radiation tolerance cells are among the topics studied.

  14. Core-shell amorphous silicon-carbon nanoparticles for high performance anodes in lithium ion batteries

    NASA Astrophysics Data System (ADS)

    Sourice, Julien; Bordes, Arnaud; Boulineau, Adrien; Alper, John P.; Franger, Sylvain; Quinsac, Axelle; Habert, Aurélie; Leconte, Yann; De Vito, Eric; Porcher, Willy; Reynaud, Cécile; Herlin-Boime, Nathalie; Haon, Cédric

    2016-10-01

    Core-shell silicon-carbon nanoparticles are attractive candidates as active material to increase the capacity of Li-ion batteries while mitigating the detrimental effects of volume expansion upon lithiation. However crystalline silicon suffers from amorphization upon the first charge/discharge cycle and improved stability is expected in starting with amorphous silicon. Here we report the synthesis, in a single-step process, of amorphous silicon nanoparticles coated with a carbon shell (a-Si@C), via a two-stage laser pyrolysis where decomposition of silane and ethylene are conducted in two successive reaction zones. Control of experimental conditions mitigates silicon core crystallization as well as formation of silicon carbide. Auger electron spectroscopy and scanning transmission electron microscopy show a carbon shell about 1 nm in thickness, which prevents detrimental oxidation of the a-Si cores. Cyclic voltammetry demonstrates that the core-shell composite reaches its maximal lithiation during the first sweep, thanks to its amorphous core. After 500 charge/discharge cycles, it retains a capacity of 1250 mAh.g-1 at a C/5 rate and 800 mAh.g-1 at 2C, with an outstanding coulombic efficiency of 99.95%. Moreover, post-mortem observations show an electrode volume expansion of less than 20% and preservation of the nanostructuration.

  15. High performance multilayered nano-crystalline silicon/silicon-oxide light-emitting diodes on glass substrates

    NASA Astrophysics Data System (ADS)

    Darbari, S.; Shahmohammadi, M.; Mortazavi, M.; Mohajerzadeh, S.; Abdi, Y.; Robertson, M.; Morrison, T.

    2011-09-01

    A low-temperature hydrogenation-assisted sequential deposition and crystallization technique is reported for the preparation of nano-scale silicon quantum dots suitable for light-emitting applications. Radio-frequency plasma-enhanced deposition was used to realize multiple layers of nano-crystalline silicon while reactive ion etching was employed to create nano-scale features. The physical characteristics of the films prepared using different plasma conditions were investigated using scanning electron microscopy, transmission electron microscopy, room temperature photoluminescence and infrared spectroscopy. The formation of multilayered structures improved the photon-emission properties as observed by photoluminescence and a thin layer of silicon oxy-nitride was then used for electrical isolation between adjacent silicon layers. The preparation of light-emitting diodes directly on glass substrates has been demonstrated and the electroluminescence spectrum has been measured.

  16. Designing high performance precursors for atomic layer deposition of silicon oxide

    SciTech Connect

    Mallikarjunan, Anupama Chandra, Haripin; Xiao, Manchao; Lei, Xinjian; Pearlstein, Ronald M.; Bowen, Heather R.; O'Neill, Mark L.; Derecskei-Kovacs, Agnes; Han, Bing

    2015-01-15

    Conformal and continuous silicon oxide films produced by atomic layer deposition (ALD) are enabling novel processing schemes and integrated device structures. The increasing drive toward lower temperature processing requires new precursors with even higher reactivity. The aminosilane family of precursors has advantages due to their reactive nature and relative ease of use. In this paper, the authors present the experimental results that reveal the uniqueness of the monoaminosilane structure [(R{sub 2}N)SiH{sub 3}] in providing ultralow temperature silicon oxide depositions. Disubstituted aminosilanes with primary amines such as in bis(t-butylamino)silane and with secondary amines such as in bis(diethylamino)silane were compared with a representative monoaminosilane: di-sec-butylaminosilane (DSBAS). DSBAS showed the highest growth per cycle in both thermal and plasma enhanced ALD. These findings show the importance of the arrangement of the precursor's organic groups in an ALD silicon oxide process.

  17. Performance of in-pixel circuits for photon counting arrays (PCAs) based on polycrystalline silicon TFTs.

    PubMed

    Liang, Albert K; Koniczek, Martin; Antonuk, Larry E; El-Mohri, Youcef; Zhao, Qihua; Street, Robert A; Lu, Jeng Ping

    2016-03-07

    Photon counting arrays (PCAs), defined as pixelated imagers which measure the absorbed energy of x-ray photons individually and record this information digitally, are of increasing clinical interest. A number of PCA prototypes with a 1 mm pixel-to-pixel pitch have recently been fabricated with polycrystalline silicon (poly-Si)-a thin-film technology capable of creating monolithic imagers of a size commensurate with human anatomy. In this study, analog and digital simulation frameworks were developed to provide insight into the influence of individual poly-Si transistors on pixel circuit performance-information that is not readily available through empirical means. The simulation frameworks were used to characterize the circuit designs employed in the prototypes. The analog framework, which determines the noise produced by individual transistors, was used to estimate energy resolution, as well as to identify which transistors contribute the most noise. The digital framework, which analyzes how well circuits function in the presence of significant variations in transistor properties, was used to estimate how fast a circuit can produce an output (referred to as output count rate). In addition, an algorithm was developed and used to estimate the minimum pixel pitch that could be achieved for the pixel circuits of the current prototypes. The simulation frameworks predict that the analog component of the PCA prototypes could have energy resolution as low as 8.9% full width at half maximum (FWHM) at 70 keV; and the digital components should work well even in the presence of significant thin-film transistor (TFT) variations, with the fastest component having output count rates as high as 3 MHz. Finally, based on conceivable improvements in the underlying fabrication process, the algorithm predicts that the 1 mm pitch of the current PCA prototypes could be reduced significantly, potentially to between ~240 and 290 μm.

  18. A first passage based model for probabilistic fracture of polycrystalline silicon MEMS structures

    NASA Astrophysics Data System (ADS)

    Xu, Zhifeng; Le, Jia-Liang

    2017-02-01

    Experiments have shown that the failure loads of Microelectromechanical Systems (MEMS) devices usually exhibit a considerable level of variability, which is believed to be caused by the random material strength and the geometry-induced random stress field. Understanding the strength statistics of MEMS devices is of paramount importance for the device design guarding against a tolerable failure risk. In this study, we develop a continuum-based probabilistic model for polycrystalline silicon (poly-Si) MEMS structures within the framework of first passage analysis. The failure of poly-Si MEMS structures is considered to be triggered by fracture initiation from the sidewalls governed by a nonlocal failure criterion. The model takes into account an autocorrelated random field of material tensile strength. The nonlocal random stress field is obtained by stochastic finite element simulations based on the information of the uncertainties of the sidewall geometry. The model is formulated within the contexts of both stationary and non-stationary stochastic processes for MEMS structures of various geometries and under different loading configurations. It is shown that the model agrees well with the experimentally measured strength distributions of uniaxial tensile poly-Si MEMS specimens of different gauge lengths. The model is further used to predict the strength distribution of poly-Si MEMS beams under three-point bending, and the result is compared with the Monte Carlo simulation. The present model predicts strong size effects on both the strength distribution and the mean structural strength. It is shown that the mean size effect curve consists of three power-law asymptotes in the small, intermediate, and large-size regimes. By matching these three asymptotes, an approximate size effect equation is proposed. The present model is shown to be a generalization of the classical weakest-link statistical model, and it provides a physical interpretation of the material length

  19. Grain boundary evaluation in sequentially laterally solidified polycrystalline-silicon devices

    NASA Astrophysics Data System (ADS)

    Valletta, A.; Bonfiglietti, A.; Rapisarda, M.; Mariucci, L.; Fortunato, G.; Brotherton, S. D.

    2007-05-01

    A systematic study has been made of the conduction process in polycrystalline-silicon thin film transistors (poly-Si TFTs) using carrier flow parallel and perpendicular to sub-grain-boundaries in sequentially laterally solidified material. The objective of this investigation was to obtain an unambiguous characterization of grain boundary (GB) behavior. By studying orthogonal TFTs in this anisotropic material, it was possible to distinguish grain boundary carrier trapping from intragrain trapping. In conventional poly-Si, the material is isotropic over distances greater than the grain size of ˜300nm, and there is no direct and clear-cut way of distinguishing between intragrain and intergrain trapping centers. In the experimental samples, the thermal activation energy of the channel current was measured in the two orthogonal directions, and the difference in activation energy was related to carrier flow over perpendicular sub-GBs. The detailed interpretation of the experimental results was facilitated by two-dimensional numerical simulations, demonstrating that a planar barrier GB, which simply resulted in a potential barrier within the channel, was fundamentally incompatible with the experimental drain current activation energy data. It was only possible to obtain a satisfactory representation of all the experimental data by using a finite width GB, in which carrier flow was controlled by transport across the resistive GB region, rather than by emission over a barrier. This representation of the sub-GB permitted the essential combination of reduced field effect mobility, for orthogonal carrier flow, and a drain current activation energy, which was close to zero.

  20. Performance of in-pixel circuits for photon counting arrays (PCAs) based on polycrystalline silicon TFTs

    NASA Astrophysics Data System (ADS)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Street, Robert A.; Lu, Jeng Ping

    2016-03-01

    Photon counting arrays (PCAs), defined as pixelated imagers which measure the absorbed energy of x-ray photons individually and record this information digitally, are of increasing clinical interest. A number of PCA prototypes with a 1 mm pixel-to-pixel pitch have recently been fabricated with polycrystalline silicon (poly-Si)—a thin-film technology capable of creating monolithic imagers of a size commensurate with human anatomy. In this study, analog and digital simulation frameworks were developed to provide insight into the influence of individual poly-Si transistors on pixel circuit performance—information that is not readily available through empirical means. The simulation frameworks were used to characterize the circuit designs employed in the prototypes. The analog framework, which determines the noise produced by individual transistors, was used to estimate energy resolution, as well as to identify which transistors contribute the most noise. The digital framework, which analyzes how well circuits function in the presence of significant variations in transistor properties, was used to estimate how fast a circuit can produce an output (referred to as output count rate). In addition, an algorithm was developed and used to estimate the minimum pixel pitch that could be achieved for the pixel circuits of the current prototypes. The simulation frameworks predict that the analog component of the PCA prototypes could have energy resolution as low as 8.9% full width at half maximum (FWHM) at 70 keV; and the digital components should work well even in the presence of significant thin-film transistor (TFT) variations, with the fastest component having output count rates as high as 3 MHz. Finally, based on conceivable improvements in the underlying fabrication process, the algorithm predicts that the 1 mm pitch of the current PCA prototypes could be reduced significantly, potentially to between ~240 and 290 μm.

  1. Utilization of Tabula Rasa to Stabilize Bulk Lifetimes in n-Cz Silicon for High-Performance Solar Cell Processing

    SciTech Connect

    LaSalvia, Vincenzo; Jensen, Mallory Ann; Youssef, Amanda; Nemeth, William; Page, Matthew; Buonassisi, Tonio; Stradins, Paul

    2016-11-21

    We investigate a high temperature, high cooling-rate anneal Tabula Rasa (TR) and report its implications on n-type Czochralski-grown silicon (n-Cz Si) for photovoltaic fabrication. Tabula Rasa aims at dissolving and homogenizing oxygen precipitate nuclei that can grow during the cell process steps and degrade the cell performance due to their high internal gettering and recombination activity. The Tabula Rasa thermal treatment is performed in a clean tube furnace with cooling rates >100 degrees C/s. We characterize the bulk lifetime by Sinton lifetime and photoluminescence mapping just after Tabula Rasa, and after the subsequent cell processing. After TR, the bulk lifetime surprisingly degrades to <; 0.1ms, only to recover to values equal or higher than the initial non-treated wafer (several ms), after typical high temperature cell process steps. Those include boron diffusion and oxidation; phosphorus diffusion/oxidation; ambient annealing at 850 degrees C; and crystallization annealing of tunneling-passivating contacts (doped polycrystalline silicon on 1.5 nm thermal oxide). The drastic lifetime improvement during high temperature cell processing is attributed to improved external gettering of metal impurities and annealing of intrinsic point defects. Time and injection dependent lifetime spectroscopy further reveals the mechanisms of lifetime improvement after Tabula Rasa treatment. Additionally, we report the efficacy of Tabula Rasa on n-type Cz-Si wafers and its dependence on oxygen concentration, correlated to position within the ingot.

  2. High performance silicon nanoparticle anode in fluoroethylene carbonate-based electrolyte for Li-ion batteries.

    PubMed

    Lin, Yong-Mao; Klavetter, Kyle C; Abel, Paul R; Davy, Nicholas C; Snider, Jonathan L; Heller, Adam; Mullins, C Buddie

    2012-07-25

    Electrodes composed of silicon nanoparticles (SiNP) were prepared by slurry casting and then electrochemically tested in a fluoroethylene carbonate (FEC)-based electrolyte. The capacity retention after cycling was significantly improved compared to electrodes cycled in a traditional ethylene carbonate (EC)-based electrolyte.

  3. Low-voltage high-performance silicon photonic devices and photonic integrated circuits operating up to 30 Gb/s.

    PubMed

    Kim, Gyungock; Park, Jeong Woo; Kim, In Gyoo; Kim, Sanghoon; Kim, Sanggi; Lee, Jong Moo; Park, Gun Sik; Joo, Jiho; Jang, Ki-Seok; Oh, Jin Hyuk; Kim, Sun Ae; Kim, Jong Hoon; Lee, Jun Young; Park, Jong Moon; Kim, Do-Won; Jeong, Deog-Kyoon; Hwang, Moon-Sang; Kim, Jeong-Kyoum; Park, Kyu-Sang; Chi, Han-Kyu; Kim, Hyun-Chang; Kim, Dong-Wook; Cho, Mu Hee

    2011-12-19

    We present high performance silicon photonic circuits (PICs) defined for off-chip or on-chip photonic interconnects, where PN depletion Mach-Zehnder modulators and evanescent-coupled waveguide Ge-on-Si photodetectors were monolithically integrated on an SOI wafer with CMOS-compatible process. The fabricated silicon PIC(off-chip) for off-chip optical interconnects showed operation up to 30 Gb/s. Under differential drive of low-voltage 1.2 V(pp), the integrated 1 mm-phase-shifter modulator in the PIC(off-chip) demonstrated an extinction ratio (ER) of 10.5dB for 12.5 Gb/s, an ER of 9.1dB for 20 Gb/s, and an ER of 7.2 dB for 30 Gb/s operation, without adoption of travelling-wave electrodes. The device showed the modulation efficiency of V(π)L(π) ~1.59 Vcm, and the phase-shifter loss of 3.2 dB/mm for maximum optical transmission. The Ge photodetector, which allows simpler integration process based on reduced pressure chemical vapor deposition exhibited operation over 30 Gb/s with a low dark current of 700 nA at -1V. The fabricated silicon PIC(intra-chip) for on-chip (intra-chip) photonic interconnects, where the monolithically integrated modulator and Ge photodetector were connected by a silicon waveguide on the same chip, showed on-chip data transmissions up to 20 Gb/s, indicating potential application in future silicon on-chip optical network. We also report the performance of the hybrid silicon electronic-photonic IC (EPIC), where a PIC(intra-chip) chip and 0.13μm CMOS interface IC chips were hybrid-integrated.

  4. High-performance one-way transmission using pyramid-shaped silicon grating-coupled hyperbolic metamaterial

    NASA Astrophysics Data System (ADS)

    Hu, Jigang; Qing, Yeming; Wen, Zhengqian; Wu, Xiaohang; Ren, Rongze; Gao, Weiqing; Li, Dongmei; Gao, Feng

    2016-11-01

    An asymmetric transmission device has been presented to realize high-performance one-way transmission at visible frequencies. This device consists of a pair of non-symmetric pyramid-shaped silicon gratings separated by a metal/dielectric multilayer structure (MDMS). Simulation results demonstrates that, compared with conventional Cr grating, MDMS with pyramid-shaped silicon gratings will greatly enhance the coupling and decoupling between the propagating waves in free space and the high frequency modes in MDMS, rendering an improved oneway transmission performance. The improved one-way transmission performance offered by our design may hold great potential in designing the optical isolator and polarizer for ultra-compact photonic integrated circuit.

  5. Ultra-thin silicon solar cells for high performance panel applications

    NASA Technical Reports Server (NTRS)

    Gay, C. F.

    1978-01-01

    Solar cells have been fabricated which achieved the highest power to mass ratios and radiation stability yet reported for silicon devices. The thinnest cells (.04 mm) had initial efficiencies in excess of 2 watts per gram (AMO) and 1.7 watts per gram after an irradiation of 1 x 10 to the 15th equivalent 1 MeV electrons per square centimeter. The cells have been successfully interconnected by welding and filtered using a FEP bonded, ceria-doped microsheet of six mil thickness. Handling losses during cell manufacture and panel assembly may be minimized through the use of an integral reinforcing perimeter or ribs which remove almost all restrictions on cell thickness and area. Such a cell is typically composed of a main section which can be as thin as 0.015 mm and is supported at the edge by a thicker border (0.20 mm) of silicon.

  6. Defect Engineering, Cell Processing, and Modeling for High-Performance, Low-Cost Crystalline Silicon Photovoltaics

    SciTech Connect

    Buonassisi, Tonio

    2013-02-26

    The objective of this project is to close the efficiency gap between industrial multicrystalline silicon (mc-Si) and monocrystalline silicon solar cells, while preserving the economic advantage of low-cost, high-volume substrates inherent to mc-Si. Over the course of this project, we made significant progress toward this goal, as evidenced by the evolution in solar-cell efficiencies. While most of the benefits of university projects are diffuse in nature, several unique contributions can be traced to this project, including the development of novel characterization methods, defect-simulation tools, and novel solar-cell processing approaches mitigate the effects of iron impurities ("Impurities to Efficiency" simulator) and dislocations. In collaboration with our industrial partners, this project contributed to the development of cell processing recipes, specialty materials, and equipment that increased cell efficiencies overall (not just multicrystalline silicon). Additionally, several students and postdocs who were either partially or fully engaged in this project (as evidenced by the publication record) are currently in the PV industry, with others to follow.

  7. Non-contact printing of high aspect ratio Ag electrodes for polycrystalline silicone solar cell with electrohydrodynamic jet printing

    NASA Astrophysics Data System (ADS)

    Jang, Yonghee; Hartarto Tambunan, Indra; Tak, Hyowon; Dat Nguyen, Vu; Kang, TaeSam; Byun, Doyoung

    2013-03-01

    This paper presents a non-contact printing mechanism for high aspect ratio silver (Ag) electrodes fabricated by an electrohydrodynamic (EHD) jet printing technique. Using high viscosity Ag paste ink, we were able to fabricate narrow and high aspect ratio electrodes. We investigated the effect of the surface energy of the substrate and improved the aspect ratio of printed lines through multiple printing. We fabricated the polycrystalline silicone solar cell with the Ag electrode and achieved cell efficiency of around 13.7%. The EHD jet printing mechanism may be an alternative method for non-contact fabrication of solar cells electrodes.

  8. Influence of Grain Structure and Doping on the Deformation and Fracture of Polycrystalline Silicon for MEMS and NEMS

    DTIC Science & Technology

    2012-09-03

    the KIC,eff for polysilicon fabricated by a different process ( MUMPS ) previously reported by this group [24,25]. The average KIC,eff varied slightly...agreement with the values reported by this group before for MUMPs polycrystalline silicon in the range of 0.8-1.2 MPa√m [24,25]. Due to its...b) within a grain. KIC,eff = 0.86 MPa√m KIC,eff = 1.03 MPa√m 0.5 µm 0.5 µm Crack tip Crack tip 14 Similarly to a previous report on MUMPs

  9. High performance continuous wave 1.3 μm quantum dot lasers on silicon

    SciTech Connect

    Liu, Alan Y. Norman, Justin; Zhang, Chong; Snyder, Andrew; Lubyshev, Dmitri; Fastenau, Joel M.; Liu, Amy W. K.; Gossard, Arthur C.; Bowers, John E.

    2014-01-27

    We demonstrate record performance 1.3 μm InAs quantum dot lasers grown on silicon by molecular beam epitaxy. Ridge waveguide lasers fabricated from the as-grown material achieve room temperature continuous wave thresholds as low as 16 mA, output powers exceeding 176 mW, and lasing up to 119 °C. P-modulation doping of the active region improves T{sub 0} to the range of 100–200 K while maintaining low thresholds and high output powers. Device yield is presented showing repeatable performance across different dies and wafers.

  10. High performance uncooled amorphous silicon VGA IRFPA with 17-µm pixel-pitch

    NASA Astrophysics Data System (ADS)

    Tissot, J. L.; Durand, A.; Garret, Th.; Minassian, C.; Robert, P.; Tinnes, S.; Vilain, M.

    2010-04-01

    The high level of accumulated expertise by ULIS and CEA/LETI on uncooled microbolometers made from amorphous silicon enables ULIS to develop VGA IRFPA formats with 17μm pixel-pitch to build up the currently available product catalog. This detector keeps all the innovations developed on the 25 μm pixel-pitch ROIC (detector configuration by serial link, low power consumption and wide electrical dynamic range). The specific appeal of this unit lies in the high spatial resolution it provides. The reduction of the pixel-pitch turns this TEC-less VGA array into a product well adapted for high resolution and compact systems. In the last part of the paper, we will look more closely at the high electro-optical performances of this IRFPA and the rapid performance enhancement. We will insist on NETD trade-off with wide thermal dynamic range, as well as the high characteristics uniformity, achieved thanks to the mastering of the amorphous silicon technology coupled with the ROIC design. This technology node paves the way to high end products as well as low end compact smaller formats like 160 x 120 or smaller.

  11. Dual-Functionalized Double Carbon Shells Coated Silicon Nanoparticles for High Performance Lithium-Ion Batteries.

    PubMed

    Chen, Shuangqiang; Shen, Laifa; van Aken, Peter A; Maier, Joachim; Yu, Yan

    2017-03-15

    To address the challenge of huge volume change and unstable solid electrolyte interface (SEI) of silicon in cycles, causing severe pulverization, this paper proposes a "double-shell" concept. This concept is designed to perform dual functions on encapsulating volume change of silicon and stabilizing SEI layer in cycles using double carbon shells. Double carbon shells coated Si nanoparticles (DCS-Si) are prepared. Inner carbon shell provides finite inner voids to allow large volume changes of Si nanoparticles inside of inner carbon shell, while static outer shell facilitates the formation of stable SEI. Most importantly, intershell spaces are preserved to buffer volume changes and alleviate mechanical stress from inner carbon shell. DCS-Si electrodes display a high rechargeable specific capacity of 1802 mAh g(-1) at a current rate of 0.2 C, superior rate capability and good cycling performance up to 1000 cycles. A full cell of DCS-Si//LiNi0.45 Co0.1 Mn1.45 O4 exhibits an average discharge voltage of 4.2 V, a high energy density of 473.6 Wh kg(-1) , and good cycling performance. Such double-shell concept can be applied to synthesize other electrode materials with large volume changes in cycles by simultaneously enhancing electronic conductivity and controlling SEI growth.

  12. Design and fabrication of high performance wafer-level vacuum packaging based on glass-silicon-glass bonding techniques

    NASA Astrophysics Data System (ADS)

    Zhang, Jinwen; Jiang, Wei; Wang, Xin; Zhou, Jilong; Yang, Huabing

    2012-12-01

    In this paper, a high performance wafer-level vacuum packaging technology based on GSG triple-layer sealing structure for encapsulating large mass inertial MEMS devices fabricated by silicon-on-glass bulk micromachining technology is presented. Roughness controlling strategy of bonding surfaces was proposed and described in detail. Silicon substrate was thinned and polished by CMP after the first bonding with the glass substrate and was then bonded with the glass micro-cap. Zr thin film was embedded into the concave of the micro-cap by a shadow-mask technique. The glass substrate was thinned to about 100 µm, wet etched through and metalized for realizing vertical feedthrough. During the fabrication, all patterning processes were operated carefully so as to reduce extrusive fragments to as little as possible. In addition, a high-performance micro-Pirani vacuum gauge was integrated into the package for monitoring the pressure and the leak rate further. The result shows that the pressure in the package is about 120 Pa and has no obvious change for more than one year indicating 10-13 stdcc s-1 leak rate.

  13. Polycrystalline silicon germanium for fabrication, release, and packaging of microelectromechanical systems

    NASA Astrophysics Data System (ADS)

    Heck, John Mccaslin

    Polycrystalline silicon germanium has recently proven to be a compelling alternative to polysilicon for micromachining. Low temperature fabrication of micromechanical structures is possible, which enables their modular integration with conventional electronics. The deposition and crystallization temperatures are significantly lower than for polysilicon, and low-stress, low-resistivity structural films can be achieved with little or no annealing. Poly-Ge can be used as a hydrogen peroxide-soluble sacrificial layer, so a wide variety of microfabrication materials can withstand the release etch. Several aspects of our research on poly-SiGe micromachining are presented in this dissertation. First, a "handbook" of poly-SiGe processing for MEMS is given, along with an overview of the advantages of this material system. An extensive study of the etching of poly-Ge sacrificial layers by heated hydrogen peroxide is presented. The dissolution of poly-Ge is limited by the dissolution of a GeO2 surface layer, and the activation energy was determined to be 9.3 kcal/mol. The etch rate was determined to be roughly 0.5 mum/min at 90°C, which is 4--6 orders of magnitude faster than structural films containing 20--60% Ge. The reaction was determined to be limited partly by the reaction rate and partly by diffusion, and diffusion limits on the order of 1 mm were observed. The fabrication of robust, high-aspect-ratio poly-SiGe structures by a thin film micromolding process (hexsil) is presented. Due to the excellent conformality of poly-Ge compared to SiO2 sacrificial layers, precise replication of the mold wafer was achieved. A gimbal/microactuator fabricated in this process enabled a critical dimension to be reduced from 7 to 4.5 mum when compared to a device made in a conventional process. Poly-SiGe hexsil was also used to fabricate micromachined caps for a precision MEMS packaging technology. In this process, the hexsil caps were fabricated on a mold wafer and transferred to a

  14. Investigation of structural defects within grain volumes that affect the efficiency of polycrystalline silicon solar cell materials

    NASA Astrophysics Data System (ADS)

    Yoo, K. C.; Regnault, W. F.; Johnson, S. M.; Storti, G. M.

    The origin and character of subgrain boundaries generated within large grains of cast polycrystalline silicon have been investigated using X-ray topography and electron beam induced current scanning techniques. It has been found that the subgrain structures originate at kinks in high angle grain boundaries when the material is subjected to thermal stress. Further, whenever adjacent grains have a common rotation axis which satisfies the slip system in both grains, it is possible, under a suitable stress, to generate bundles of dislocations simultaneously in both grains. The resultant dislocations are electrically active and serve to decrease the effective minority carrier diffusion length. By controlling the thermal gradients in the silicon bricks, the generation of subgrain boundaries can be minimized.

  15. High-performance terahertz wave absorbers made of silicon-based metamaterials

    SciTech Connect

    Yin, Sheng; Zhu, Jianfei; Jiang, Wei; Yuan, Jun; Yin, Ge; Ma, Yungui; Xu, Wendao; Xie, Lijuan; Ying, Yibin

    2015-08-17

    Electromagnetic (EM) wave absorbers with high efficiency in different frequency bands have been extensively investigated for various applications. In this paper, we propose an ultra-broadband and polarization-insensitive terahertz metamaterial absorber based on a patterned lossy silicon substrate. Experimentally, a large absorption efficiency more than 95% in a frequency range of 0.9–2.5 THz was obtained up to a wave incident angle as large as 70°. Much broader absorption bandwidth and excellent oblique incidence absorption performance are numerically demonstrated. The underlying mechanisms due to the combination of a waveguide cavity mode and impedance-matched diffraction are analyzed in terms of the field patterns and the scattering features. The monolithic THz absorber proposed here may find important applications in EM energy harvesting systems such as THz barometer or biosensor.

  16. High-performance hybrid organic-inorganic solar cell based on planar n-type silicon

    NASA Astrophysics Data System (ADS)

    Chi, Dan; Qi, Boyuan; Wang, Jizheng; Qu, Shengchun; Wang, Zhanguo

    2014-05-01

    Hybrid organic-inorganic solar cells were fabricated by spin coating the hole transporting conductive poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film on n-type crystalline silicon (n-Si). By incorporating different additives into the PEDOT:PSS, the conductivity and wettability of PEDOT:PSS film are markedly improved, and the device performance is greatly enhanced accordingly. To further optimize the device performance, poly(3-hexylthiophene) (P3HT) layer was inserted between the n-Si and PEDOT:PSS layer. The P3HT layer blocks electrons from diffusing to the PEDOT:PSS, and hence reduces recombination at the anode side. The device eventually exhibits a high power conversion efficiency of 11.52%.

  17. Physically Cross-linked Polymer Binder Induced by Reversible Acid-Base Interaction for High-Performance Silicon Composite Anodes.

    PubMed

    Lim, Sanghyun; Chu, Hodong; Lee, Kukjoo; Yim, Taeeun; Kim, Young-Jun; Mun, Junyoung; Kim, Tae-Hyun

    2015-10-28

    Silicon is greatly promising for high-capacity anode materials in lithium-ion batteries (LIBs) due to their exceptionally high theoretical capacity. However, it has a big challenge of severe volume changes during charge and discharge, resulting in substantial deterioration of the electrode and restricting its practical application. This conflict requires a novel binder system enabling reliable cyclability to hold silicon particles without severe disintegration of the electrode. Here, a physically cross-linked polymer binder induced by reversible acid-base interaction is reported for high performance silicon-anodes. Chemical cross-linking of polymer binders, mainly based on acidic polymers including poly(acrylic acid) (PAA), have been suggested as effective ways to accommodate the volume expansion of Si-based electrodes. Unlike the common chemical cross-linking, which causes a gradual and nonreversible fracturing of the cross-linked network, a physically cross-linked binder based on PAA-PBI (poly(benzimidazole)) efficiently holds the Si particles even after the large volume changes due to its ability to reversibly reconstruct ionic bonds. The PBI-containing binder, PAA-PBI-2, exhibited large capacity (1376.7 mAh g(-1)), high Coulombic efficiency (99.1%) and excellent cyclability (751.0 mAh g(-1) after 100 cycles). This simple yet efficient method is promising to solve the failures relating with pulverization and isolation from the severe volume changes of the Si electrode, and advance the realization of high-capacity LIBs.

  18. The large-scale integration of high-performance silicon nanowire field effect transistors.

    PubMed

    Li, Qiliang; Zhu, Xiaoxiao; Yang, Yang; Ioannou, Dimitris E; Xiong, Hao D; Kwon, Doo-Won; Suehle, John S; Richter, Curt A

    2009-10-14

    In this work we present a CMOS-compatible self-aligning process for the large-scale-integration of high-performance nanowire field effect transistors with well-saturated drain currents, steep subthreshold slopes at low drain voltage and a large on/off current ratio (>10(7)). The subthreshold swing is as small as 45 mV/dec, which is substantially beyond the thermodynamic limit (60 mV/dec) of conventional planar MOSFETs. These excellent device characteristics are achieved by using a clean integration process and a device structure that allows effective gate-channel-source coupling to tune the source/drain Schottky barriers at the nanoscale.

  19. Characterization of high performance silicon-based VMJ PV cells for laser power transmission applications

    NASA Astrophysics Data System (ADS)

    Perales, Mico; Yang, Mei-huan; Wu, Cheng-liang; Hsu, Chin-wei; Chao, Wei-sheng; Chen, Kun-hsien; Zahuranec, Terry

    2016-03-01

    Continuing improvements in the cost and power of laser diodes have been critical in launching the emerging fields of power over fiber (PoF), and laser power beaming. Laser power is transmitted either over fiber (for PoF), or through free space (power beaming), and is converted to electricity by photovoltaic cells designed to efficiently convert the laser light. MH GoPower's vertical multi-junction (VMJ) PV cell, designed for high intensity photovoltaic applications, is fueling the emergence of this market, by enabling unparalleled photovoltaic receiver flexibility in voltage, cell size, and power output. Our research examined the use of the VMJ PV cell for laser power transmission applications. We fully characterized the performance of the VMJ PV cell under various laser conditions, including multiple near IR wavelengths and light intensities up to tens of watts per cm2. Results indicated VMJ PV cell efficiency over 40% for 9xx nm wavelengths, at laser power densities near 30 W/cm2. We also investigated the impact of the physical dimensions (length, width, and height) of the VMJ PV cell on its performance, showing similarly high performance across a wide range of cell dimensions. We then evaluated the VMJ PV cell performance within the power over fiber application, examining the cell's effectiveness in receiver packages that deliver target voltage, intensity, and power levels. By designing and characterizing multiple receivers, we illustrated techniques for packaging the VMJ PV cell for achieving high performance (> 30%), high power (> 185 W), and target voltages for power over fiber applications.

  20. Silicon/copper dome-patterned electrodes for high-performance hybrid supercapacitors

    PubMed Central

    Liu, Xuyan; Jung, Hun-Gi; Kim, Sang-Ok; Choi, Ho-Suk; Lee, Sangwha; Moon, Jun Hyuk; Lee, Joong Kee

    2013-01-01

    This study proposes a method for manufacturing high-performance electrode materials in which controlling the shape of the current collector and electrode material for a Li-ion capacitor (LIC). In particular, the proposed LIC manufacturing method maintains the high voltage of a cell by using a microdome-patterned electrode material, allowing for reversible reactions between the Li-ion and the active material for an extended period of time. As a result, the LICs exhibit initial capacities of approximately 42 F g−1, even at 60 A g−1. The LICs also exhibit good cycle performance up to approximately 15,000 cycles. In addition, these advancements allow for a considerably higher energy density than other existing capacitor systems. The energy density of the proposed LICs is approximately nine, two, and 1.5 times higher than those of the electrochemical double layer capacitor (EDLC), AC/LiMn2O4 hybrid capacitor, and intrinsic Si/AC LIC, respectively. PMID:24292725

  1. Modeling and validation of high-performance and athermal AWGs for the silicon photonics platform

    NASA Astrophysics Data System (ADS)

    Tondini, Stefano; Castellan, Claudio; Mancinelli, Mattia; Pavesi, Lorenzo

    2016-05-01

    Array waveguide gratings (AWGs) are a key component in WDM systems, allowing for de-multiplexing and routing of wavelength channels. A high-resolution AWG able to satisfy challenging requirements in terms of insertion loss and X-talk is what is needed to contribute to the paradigm change in the deployment of optical communication that is nowadays occurring within the ROADM architectures. In order to improve the performances and keep down the footprint, we modified the design at the star coupler (SC) and at the bending stages. We evaluated how the background noise is modified within a whiskered-shaped SC optimized to reduce the re ectivity of the SOI slab and keep down back-scattered optical signal. A dedicated heating circuit has also been designed, in order to allow for an overall tuning of the channel-output. A high-performance AWG has also to cope with possible thermal-induced environmental changes, especially in the case of integration within a Photonic Integrated Circuit (PIC). Therefore, we suggested a way to reduce the thermal-sensitivity.

  2. High-Performance Silicon-Germanium-Based Thermoelectric Modules for Gas Exhaust Energy Scavenging

    NASA Astrophysics Data System (ADS)

    Romanjek, K.; Vesin, S.; Aixala, L.; Baffie, T.; Bernard-Granger, G.; Dufourcq, J.

    2015-06-01

    Some of the energy used in transportation and industry is lost as heat, often at high-temperatures, during conversion processes. Thermoelectricity enables direct conversion of heat into electricity, and is an alternative to the waste-heat-recovery technology currently used, for example turbines and other types of thermodynamic cycling. The performance of thermoelectric (TE) materials and modules has improved continuously in recent decades. In the high-temperature range ( T hot side > 500°C), silicon-germanium (SiGe) alloys are among the best TE materials reported in the literature. These materials are based on non-toxic elements. The Thermoelectrics Laboratory at CEA (Commissariat à l'Energie Atomique et aux Energies Alternatives) has synthesized n and p-type SiGe pellets, manufactured TE modules, and integrated these into thermoelectric generators (TEG) which were tested on a dedicated bench with hot air as the source of heat. SiGe TE samples of diameter 60 mm were created by spark-plasma sintering. For n-type SiGe doped with phosphorus the peak thermoelectric figure of merit reached ZT = 1.0 at 700°C whereas for p-type SiGe doped with boron the peak was ZT = 0.75 at 700°C. Thus, state-of-the-art conversion efficiency was obtained while also achieving higher production throughput capacity than for competing processes. A standard deviation <4% in the electrical resistance of batches of ten pellets of both types was indicative of high reproducibility. A silver-paste-based brazing technique was used to assemble the TE elements into modules. This assembly technique afforded low and repeatable electrical contact resistance (<3 nΩ m2). A test bench was developed for measuring the performance of TE modules at high temperatures (up to 600°C), and thirty 20 mm × 20 mm TE modules were produced and tested. The results revealed the performance was reproducible, with power output reaching 1.9 ± 0.2 W for a 370 degree temperature difference. When the temperature

  3. Investigation of p-channel and n-channel junctionless gate-all-around polycrystalline silicon nanowires with silicon nanocrystals nonvolatile memory

    NASA Astrophysics Data System (ADS)

    Yeh, Mu-Shih; Wu, Yung-Chun; Chung, Ming-Hsien; Jhan, Yi-Ruei; Chang-Liao, Kuei-Shu; Liu, Kuan-Cheng; Wu, Min-Hsin; Hung, Min-Feng

    2014-07-01

    This work presents p-channel and n-channel junctionless (JL) polycrystalline silicon (poly-Si) nanowires gate-all-around (GAA) nonvolatile memory (NVM) devices with silicon nanocrystals charge trapping layer. Experimental results indicate that the n-channel device has better programming efficiency and p-channel device has better erasing efficiency. For p-channel device, an extrapolation of the memory window to 10 yr demonstrates that 95% of the stored charge can be retained at high temperature of 85 °C. Such the p-channel and n-channel JL-GAA NVMs are feasible for use in system-on-panel (SOP) and 3-D stacked flash memory applications.

  4. High performance of silicon nanowire-based biosensors using a high-k stacked sensing thin film.

    PubMed

    Bae, Tae-Eon; Jang, Hyun-June; Yang, Jong-Heon; Cho, Won-Ju

    2013-06-12

    High performance silicon nanowire (SiNW) sensors with SiO2/HfO2/Al2O3 (OHA) engineered sensing thin films were fabricated. A lower interface state density, a larger capacitance and a stronger chemical immunity, which are essential for enhancing the performance of devices, were accomplished by stacking thin SiO2, HfO2, and Al2O3 layers, respectively, in sequence on the SiNW channel. Compared with the conventional single SiO2 thin film, the staked OHA thin films demonstrated improved sensing performances; a higher sensitivity, a lower hysteresis voltage, and a smaller drift rate, as well as a higher output current. Therefore, the SiNW sensors with OHA stacked sensing thin films are very promising to biological and chemical sensor applications.

  5. Atmospheric Pressure Micro-Thermal-Plasma-Jet Crystallization of Amorphous Silicon Strips for High-Performance Thin Film Transistor Fabrication

    NASA Astrophysics Data System (ADS)

    Morisaki, Seiji; Nakatani, Taichi; Shin, Ryota; Higashi, Seiichiro

    2015-09-01

    Zone melting recrystallization (ZMR) of amorphous silicon (a-Si) strips by micro-thermal-plasma-jet (u-TPJ) irradiation is quite effective to suppress grain boundaries (GBs) except sigma 3 coincidence site lattice (CSL). Intra-grain defects in 1 μm wide strips were significantly reduced by suppressing the agglomeration of molten Si with low temperature condition around melting point of crystalline Si. Thin film transistors (TFTs), using optimized ZMR condition by scanning speed of 1500 mm/s demonstrated extremely high performance with field effect mobility (uFE) of 443 cm2/Vs and swing factor (S) of 210 mV/dec. Part of this work was supported by the Research Institute for Nanodevice and Bio Systems (RNBS), Hiroshima University.

  6. Very high-cycle fatigue failure in micron-scale polycrystalline silicon films: Effects of environment and surface oxide thickness

    NASA Astrophysics Data System (ADS)

    Alsem, D. H.; Timmerman, R.; Boyce, B. L.; Stach, E. A.; De Hosson, J. Th. M.; Ritchie, R. O.

    2007-01-01

    Fatigue failure in micron-scale polycrystalline silicon structural films, a phenomenon that is not observed in bulk silicon, can severely impact the durability and reliability of microelectromechanical system devices. Despite several studies on the very high-cycle fatigue behavior of these films (up to 1012cycles), there is still an on-going debate on the precise mechanisms involved. We show here that for devices fabricated in the multiuser microelectromechanical system process (MUMPs) foundry and Sandia Ultra-planar, Multi-level MEMS Technology (SUMMiT V™) process and tested under equi-tension/compression loading at ˜40kHz in different environments, stress-lifetime data exhibit similar trends in fatigue behavior in ambient room air, shorter lifetimes in higher relative humidity environments, and no fatigue failure at all in high vacuum. The transmission electron microscopy of the surface oxides in the test samples shows a four- to sixfold thickening of the surface oxide at stress concentrations after fatigue failure, but no thickening after overload fracture in air or after fatigue cycling in vacuo. We find that such oxide thickening and premature fatigue failure (in air) occur in devices with initial oxide thicknesses of ˜4nm (SUMMiT V™) as well as in devices with much thicker initial oxides ˜20nm (MUMPs). Such results are interpreted and explained by a reaction-layer fatigue mechanism. Specifically, moisture-assisted subcritical cracking within a cyclic stress-assisted thickened oxide layer occurs until the crack reaches a critical size to cause catastrophic failure of the entire device. The entirety of the evidence presented here strongly indicates that the reaction-layer fatigue mechanism is the governing mechanism for fatigue failure in micron-scale polycrystalline silicon thin films.

  7. A method for polycrystalline silicon delineation applicable to a double-diffused MOS transistor

    NASA Technical Reports Server (NTRS)

    Halsor, J. L.; Lin, H. C.

    1974-01-01

    Method is simple and eliminates requirement for unreliable special etchants. Structure is graded in resistivity to prevent punch-through and has very narrow channel length to increase frequency response. Contacts are on top to permit planar integrated circuit structure. Polycrystalline shield will prevent creation of inversion layer in isolated region.

  8. Ultratough, Thermally Stable Polycrystalline Diamond/Silicon Carbide Nanocomposites for Drill Bits

    SciTech Connect

    2009-03-01

    This factsheet describes a research project whose goal is to develop and produce in quantity novel superhard and ultratough thermally stable polycrystalline (TSP) diamond/SiC nanocomposites reinforced with SiC/C nanofibers for drill-bit applications and multiple industrial functions.

  9. Towards a high performing UV-A sensor based on Silicon Carbide and hydrogenated Silicon Nitride absorbing layers

    NASA Astrophysics Data System (ADS)

    Mazzillo, M.; Sciuto, A.; Mannino, G.; Renna, L.; Costa, N.; Badalà, P.

    2016-10-01

    Exposure to ultraviolet (UV) radiation is a major risk factor for most skin cancers. The sun is our primary natural source of UV radiation. The strength of the sun's ultraviolet radiation is expressed as Solar UV Index (UVI). UV-A (320-400 nm) and UV-B (290-320 nm) rays mostly contribute to UVI. UV-B is typically the most destructive form of UV radiation because it has enough energy to cause photochemical damage to cellular DNA. Also overexposure to UV-A rays, although these are less energetic than UV-B photons, has been associated with toughening of the skin, suppression of the immune system, and cataract formation. The use of preventive measures to decrease sunlight UV radiation absorption is fundamental to reduce acute and irreversible health diseases to skin, eyes and immune system. In this perspective UV sensors able to monitor in a monolithic and compact chip the UV Index and relative UV-A and UV-B components of solar spectrum can play a relevant role for prevention, especially in view of the integration of these detectors in close at hand portable devices. Here we present the preliminary results obtained on our UV-A sensor technology based on the use of hydrogenated Silicon Nitride (SiN:H) thin passivating layers deposited on the surface of thin continuous metal film Ni2Si/4H-SiC Schottky detectors, already used for UV-Index monitoring. The first UV-A detector prototypes exhibit a very low leakage current density of about 0.2 pA/mm2 and a peak responsivity value of 0.027 A/W at 330 nm, both measured at 0V bias.

  10. Initial steps toward the realization of large area arrays of single photon counting pixels based on polycrystalline silicon TFTs

    NASA Astrophysics Data System (ADS)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Jiang, Hao; Street, Robert A.; Lu, Jeng Ping

    2014-03-01

    The thin-film semiconductor processing methods that enabled creation of inexpensive liquid crystal displays based on amorphous silicon transistors for cell phones and televisions, as well as desktop, laptop and mobile computers, also facilitated the development of devices that have become ubiquitous in medical x-ray imaging environments. These devices, called active matrix flat-panel imagers (AMFPIs), measure the integrated signal generated by incident X rays and offer detection areas as large as ~43×43 cm2. In recent years, there has been growing interest in medical x-ray imagers that record information from X ray photons on an individual basis. However, such photon counting devices have generally been based on crystalline silicon, a material not inherently suited to the cost-effective manufacture of monolithic devices of a size comparable to that of AMFPIs. Motivated by these considerations, we have developed an initial set of small area prototype arrays using thin-film processing methods and polycrystalline silicon transistors. These prototypes were developed in the spirit of exploring the possibility of creating large area arrays offering single photon counting capabilities and, to our knowledge, are the first photon counting arrays fabricated using thin film techniques. In this paper, the architecture of the prototype pixels is presented and considerations that influenced the design of the pixel circuits, including amplifier noise, TFT performance variations, and minimum feature size, are discussed.

  11. Rapid recovery of polycrystalline silicon from kerf loss slurry using double-layer organic solvent sedimentation method

    NASA Astrophysics Data System (ADS)

    Xing, Peng-fei; Guo, Jing; Zhuang, Yan-xin; Li, Feng; Tu, Gan-feng

    2013-10-01

    The rapid development of photovoltaic (PV) industries has led to a shortage of silicon feedstock. However, more than 40% silicon goes into slurry wastes due to the kerf loss in the wafer slicing process. To effectively recycle polycrystalline silicon from the kerf loss slurry, an innovative double-layer organic solvent sedimentation process was presented in the paper. The sedimentation velocities of Si and SiC particles in some organic solvents were investigated. Considering the polarity, viscosity, and density of solvents, the chloroepoxy propane and carbon tetrachloride were selected to separate Si and SiC particles. It is found that Si and SiC particles in the slurry waste can be successfully separated by the double-layer organic solvent sedimentation method, which can greatly reduce the sedimentation time and improve the purity of obtained Si-rich and SiC-rich powders. The obtained Si-rich powders consist of 95.04% Si, and the cast Si ingot has 99.06% Si.

  12. Effects of defects and impurities on minority carrier lifetime in cast-grown polycrystalline silicon

    NASA Astrophysics Data System (ADS)

    Ohshita, Y.; Nishikawa, Y.; Tachibana, M.; Tuong, V. K.; Sasaki, T.; Kojima, N.; Tanaka, S.; Yamaguchi, M.

    2005-02-01

    The grain size distribution of B-doped cast-grown polycrystalline Si could not explain the minority carrier lifetime map. The lifetime was not mainly determined by the grain boundary recombination, since the grain size of the present cast-grown polycrystalline Si exceeded 1 cm and was large enough as compared with the minority carrier diffusion length (0.25 μm). In the region where lifetime was relatively short, there were many defects, which appeared as etch-pit by the Secco etching. The relationship between the etch-pit density and the minority carrier lifetime suggested that these defects acted as a recombination center and that they mainly determined the lifetime. There were many C atoms (>10 17 cm 3), which exist as substitutional impurities, in the as-grown wafer. The thermal annealing induced the C segregation, which might deteriorate the solar cell performance through the cell fabrication processes.

  13. The effect of germanium ion implantation dose on the amorphization and recrystallization of polycrystalline silicon films

    NASA Astrophysics Data System (ADS)

    Komem, Y.; Hall, I. W.

    1981-11-01

    Polycrystalline Si films have been amorphized by implantation with 130-keV Ge ions and subsequently recrystallized by conventional heat treatment. It is found that, after amorphization with a low ion dose, recrystallization produces a structure which is morphologically similar to the original film. By contrast, after high Ge dose implantation, recrystallization proceeds dendritically. An initial rationale for this behavior is proposed in terms of the lattice disorder introduced by ion implantation.

  14. Deformation and fracture of single-crystal and sintered polycrystalline silicon carbide produced by cavitation

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Hattori, Shuji; Okada, Tsunenori; Buckley, Donald H.

    1989-01-01

    An investigation was conducted to examine the deformation and fracture behavior of single-crystal and sintered polycrystalline SiC surfaces exposed to cavitation. Cavitation erosion experiments were conducted in distilled water at 25 C by using a magnetostrictive oscillator in close proximity (1 mm) to the surface of SiC. The horn frequency was 20 kHz, and the double amplitude of the vibrating disk was 50 microns. The results of the investigation indicate that the SiC (0001) surface could be deformed in a plastic manner during cavitation. Dislocation etch pits were formed when the surface was chemically etched. The number of defects, including dislocations in SiC (0001) surface, increased with increasing exposure time to cavitation. The presence of intrinsic defects such as voids in the surficial layers of the sintered polycrystalline SiC determined the zones at which fractured grains and fracture pits (pores) were generated. Single-crystal SiC had superior erosion resistance to that of sintered polycrystalline SiC.

  15. Deformation and fracture of single-crystal and sintered polycrystalline silicon carbide produced by cavitation

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Hattori, Shuji; Okada, Tsunenori; Buckley, Donald H.

    1987-01-01

    An investigation was conducted to examine the deformation and fracture behavior of single-crystal and sintered polycrystalline SiC surfaces exposed to cavitation. Cavitation erosion experiments were conducted in distilled water at 25 C by using a magnetostrictive oscillator in close proximity (1 mm) to the surface of SiC. The horn frequency was 20 kHz, and the double amplitude of the vibrating disk was 50 microns. The results of the investigation indicate that the SiC (0001) surface could be deformed in a plastic manner during cavitation. Dislocation etch pits were formed when the surface was chemically etched. The number of defects, including dislocations in the SiC (0001) surface, increased with increasing exposure time to cavitation. The presence of intrinsic defects such as voids in the surficial layers of the sintered polycrystalline SiC determined the zones at which fractured grains and fracture pits (pores) were generated. Single-crystal SiC had superior erosion resistance to that of sintered polycrystalline SiC.

  16. Fatigue of polycrystalline silicon for MEMS applications: Crack growth and stability under resonant loading conditions

    SciTech Connect

    Muhlstein, C.L.; Howe, R.T.; Ritchie, R.O.

    2001-12-05

    Although bulk silicon is not known to exhibit susceptibility to cyclic fatigue, micron-scale structures made from silicon films are known to be vulnerable to degradation by fatigue in ambient air environments, a phenomenon that has been recently modeled in terms of a mechanism of sequential oxidation and stress-corrosion cracking of the native oxide layer.

  17. Development of low cost thin film polycrystalline silicon solar cells for terrestrial applications

    NASA Technical Reports Server (NTRS)

    Chu, T. L.

    1975-01-01

    The AMO efficiencies (no anti-reflection coating) obtained to date are 2.5% for solar cells deposited on graphite substrates, 3.5% for solar cells deposited on metallurgical silicon substrates, and 4.5% for solar cells fabricated from purified metallurgical silicon.

  18. Mechanism of fatigue in micron-scale films of polycrystalline silicon for microelectromechanical applications

    SciTech Connect

    Muhlstein, C.L.; Stach, E.A.; Ritchie, R.O.

    2001-08-02

    Reported nearly a decade ago, cyclic fatigue failure in silicon thin films has remained a mystery. Silicon does not display the room temperature plasticity or extrinsic toughening mechanisms necessary to cause fatigue in either ductile (e.g., metals) or brittle (e.g., ceramics and ordered mintermetallic) materials.

  19. In-Plane Grain Orientation Alignment of Polycrystalline Silicon Films by Normal and Oblique-Angle Ion Implantations

    NASA Astrophysics Data System (ADS)

    Nakajima, Anri; Kuroki, Shin-Ichiro; Fujii, Shuntaro; Ito, Takashi

    2012-04-01

    Random crystallographic orientations of polycrystalline silicon (poly-Si) grains in the films grown on a SiO2 substrate by chemical vapor deposition were laterally aligned by maintaining the 110 restricted pillar texture through double Si+ self-ion implantations. The in-plane X-ray diffraction pattern and rocking curve clearly indicate the lateral alignment. The oblique-angle Si+ self-ion implantation was also found to be useful for increasing the amount of the 110 pillar texture. The electron backscatter diffraction (EBSD) pattern supports the increase in the amount of the 110 pillar texture and the lateral crystal orientation alignment. The transmission electron micrography and EBSD results also suggest that grain size is increased by double Si+ self-ion implantations. Although further systematic optimization may be required, the technique will be useful for improving the electrical characteristics of poly-Si devices for future electronic systems on insulators.

  20. Abnormal degradation of high-voltage p-type MOSFET with n+ polycrystalline silicon gate during AC stress

    NASA Astrophysics Data System (ADS)

    Lee, Dongjun; Joo, Ikhyung; Lee, Changsub; Song, Duheon; Choi, Byoungdeog

    2016-11-01

    We investigated the abnormal degradation of high-voltage p-type MOSFET (HV pMOSFET) under negative AC gate bias stress. In HV pMOSFET with n+ polycrystalline silicon (poly-Si) gate, the abnormal degradation occurs after the gradual degradation during negative AC stress. The abnormal degradation is suppressed by changing the gate material from n+ poly-Si to p+ poly-Si, and it is caused by hot holes produced by the impact ionization near the surface when electrons move from the gate toward the gate oxide. We suggest a possible mechanism to explain the improvement of degradation by using p+ poly-Si as a gate material.

  1. <100>-textured self-assembled square-shaped polycrystalline silicon grains by multiple shot excimer laser crystallization

    SciTech Connect

    He Ming; Ishihara, Ryoichi; Metselaar, Wim; Beenakker, Kees

    2006-10-15

    Strong preference for <100> surface and in-plane orientations has been observed in polycrystalline silicon film on SiO{sub 2} after crystallization with multiple excimer laser pulses. Laser induced periodic surface structure (LIPSS) is developed in the film, constructing self-assembled square-shaped grains. The clear texture can be observed in a relatively wide energy density window, from 250 to 275 mJ/cm{sup 2}, for a 30 nm thick {alpha}-Si layer. It is speculated that the lateral growth velocity of <100>-oriented grains is the fastest, and the orthogonal in-plane <100> directions are developed due to the alternate directions of melting and solidification during the LIPSS formation.

  2. Temperature- and doping-concentration-dependent characteristics of junctionless gate-all-around polycrystalline-silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Tso, Chia-Tsung; Liu, Tung-Yu; Pan, Fu-Ming; Sheu, Jeng-Tzong

    2017-04-01

    The temperature effects of both gate-all-around polycrystalline silicon nanowire (GAA poly-Si NW) junctionless (JL) and inversion mode (IM) transistor devices at various temperatures (77–410 K) were investigated. The electrical characteristics of these devices, such as subthreshold swing (SS), threshold voltage (V th), and drain-induced barrier lowering (DIBL), were also characterized and compared in this study. Moreover, JL devices with different doping concentrations at various temperatures were also discussed. Both V th and I on showed significant doping concentration dependences for JL devices with doping concentrations of 1 × 1019 and 5 × 1019 cm‑3. However, the electrical characteristics of JL devices showed less thermal sensitivity when the doping concentration reached 1020 cm‑3.

  3. Characterization of electrothermal actuators and arrays fabricated in a four-level, planarized surface-micromachined polycrystalline silicon process

    SciTech Connect

    Comtois, J.H.; Michalicek, M.A.; Barron, C.C.

    1997-06-01

    This paper presents the results of tests performed on a variety of electrothermal microactuators and arrays of these actuators recently fabricated in the four-level planarized polycrystalline silicon (polysilicon) SUMMiT process at the U.S. Department of Energy`s Sandia National Laboratories. These results are intended to aid designers of thermally actuated mechanisms, and will apply to similar actuators made in other polysilicon MEMS processes. The measurements include force and deflection versus input power, maximum operating frequency, effects of long term operation, and ideal actuator and array geometries for different design criteria. A typical application in a stepper motor is shown to illustrate the utility of these actuators and arrays.

  4. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Final Subcontract Report, 1 April 2002--28 February 2006

    SciTech Connect

    Wohlgemuth, J.; Narayanan, M.

    2006-07-01

    The major objectives of this program were to continue advances of BP Solar polycrystalline silicon manufacturing technology. The Program included work in the following areas. (1) Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations. (2) Developing wire saws to slice 100-..mu..m-thick silicon wafers on 290-..mu..m-centers. (3) Developing equipment for demounting and subsequent handling of very thin silicon wafers. (4) Developing cell processes using 100-..mu..m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%. (5) Expanding existing in-line manufacturing data reporting systems to provide active process control. (6) Establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology. (7) Facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock..

  5. Inks for Ink Jet Printed Contacts for High Performance Silicon Solar Cells: Cooperative Research and Development Final Report, CRADA No. CRD-06-199

    SciTech Connect

    Ginley, D.

    2013-01-01

    The work under the proposed CRADA will be a joint effort by BP Solar and NREL to develop new types of high performance inks for high quality contacts to silicon solar cells. NREL will develop inks that have electronic properties that will allow the formation of high quality ohmic contacts to n- and p-type crystalline silicon, and BP Solar will evaluate these contacts in test contact structures.

  6. Improvement in pH sensitivity of low-temperature polycrystalline-silicon thin-film transistor sensors using H2 sintering.

    PubMed

    Yen, Li-Chen; Tang, Ming-Tsyr; Chang, Fang-Yu; Pan, Tung-Ming; Chao, Tien-Sheng; Lee, Chiang-Hsuan

    2014-02-25

    In this article, we report an improvement in the pH sensitivity of low-temperature polycrystalline-silicon (poly-Si) thin-film transistor (TFT) sensors using an H2 sintering process. The low-temperature polycrystalline-silicon (LTPS) TFT sensor with H2 sintering exhibited a high sensitivity than that without H2 sintering. This result may be due to the resulting increase in the number of Si-OH2(+) and Si-O(-) bonds due to the incorporation of H in the gate oxide to reduce the dangling silicon bonds and hence create the surface active sites and the resulting increase in the number of chemical reactions at these surface active sites. Moreover, the LTPS TFT sensor device not only offers low cost and a simple fabrication processes, but the technique also can be extended to integrate the sensor into other systems.

  7. A High-Performance Lithium-Ion Battery Anode Based on the Core-Shell Heterostructure of Silicon-Coated Vertically Aligned Carbon Nanofibers

    DTIC Science & Technology

    2013-01-01

    electrode for polymer electrolyte dye-sensitized solar cells www.rsc.org/MaterialsA Registered Charity Number 207890 A university-industrial...ABSTRACT 16. SECURITY CLASSIFICATION OF: This study reports a high-performance hybrid lithium-ion anode material based on coaxially coated Si shell...SUBJECT TERMS high-performance Li-ion battery anodes; nanostructured materials; silicon-carbon hybrid structure; vertically aligned carbon nanofibers

  8. Comparison between laser terahertz emission microscope and conventional methods for analysis of polycrystalline silicon solar cell

    SciTech Connect

    Nakanishi, Hidetoshi Ito, Akira; Takayama, Kazuhisa Kawayama, Iwao Murakami, Hironaru Tonouchi, Masayoshi

    2015-11-15

    A laser terahertz emission microscope (LTEM) can be used for noncontact inspection to detect the waveforms of photoinduced terahertz emissions from material devices. In this study, we experimentally compared the performance of LTEM with conventional analysis methods, e.g., electroluminescence (EL), photoluminescence (PL), and laser beam induced current (LBIC), as an inspection method for solar cells. The results showed that LTEM was more sensitive to the characteristics of the depletion layer of the polycrystalline solar cell compared with EL, PL, and LBIC and that it could be used as a complementary tool to the conventional analysis methods for a solar cell.

  9. Thin film polycrystalline silicon solar cells: first technical progress report, April 15, 1980-July 15, 1980

    SciTech Connect

    1980-07-01

    The objectives of this contract are to fabricate large area thin film silicon solar cells with AM1 efficiency of 10% or greater with good reproducibility and good yield and to assess the feasibility of implementing this process for manufacturing solar cells at a cost of $300/kWe. Efforts during the past quarter have been directed to the purification of metallurgical silicon, the preparation of substrates, and the fabrication and characterization of solar cells. The partial purification of metallurgical silicon by extraction with aqua regia has been investigated in detail, and the resulting silicon was analyzed by the atomic absorption technique. The unidirectional solidification of aqua regia-extracted metallurgical silicon on graphite was used for the preparation of substrates, and the impurity distribution in the substrate was also determined. Large area (> 30 cm/sup 2/) solar cells have been prepared from aqua regia-extracted metallurgical silicon substrates by the thermal reduction of trichlorosilane containing appropriate dopants. Chemically deposited tin-dioxide films were used as antireflection coatings. Solar cells with AM1 efficiencies of about 8.5% have been obtained. Their spectral response, minority carrier diffusion length, and I/sub sc/-V/sub oc/ relation have been measured.

  10. Rational design of three-dimensional macroporous silicon as high performance Li-ion battery anodes with long cycle life

    NASA Astrophysics Data System (ADS)

    Wu, Hao; Du, Ning; Shi, Xianxing; Yang, Deren

    2016-11-01

    Three-dimensional (3D) macroporous silicon with stable interconnected structure is prepared by magnesiothermic reduction based on deliberate design, while flexible morphological control of zero-dimensional (0D) hollow nanospheres is realized via simply altering the conditions of the same reaction. When used as anode materials in lithium-ion batteries, the empty space in both structures allows for effective accommodation of large volume changes during lithium insertion and extraction. Due to the robustness of the interconnected porous structure, the 3D Si@C electrode exhibits better electrochemical properties with a reversible capacity of 1058 mAh g-1 after 800 cycles and 91% capacity retention (only 0.012% capacity degradation per cycle). The coulombic efficiency of the 3D porous electrode stabilizes at 99.4% in later cycles. The results demonstrated herein provide a better understanding of the controllable magnesiothermic reduction reaction, which is potentially an efficient method for large scale synthesis of high-performance Si anodes.

  11. Effect of the fused quartz particle density on nucleation and grain control of high-performance multicrystalline silicon ingots

    NASA Astrophysics Data System (ADS)

    Ding, Junjing; Yu, Yunyang; Chen, Wenliang; Zhou, Xucheng; Wu, Zhiyong; Zhong, Genxiang; Huang, Xinming

    2016-11-01

    The nucleation process of high-performance multicrystalline silicon (HP mc-Si) growth seeded by fused quartz particles (FQP) through directional solidification is crucial for the ingot quality. To determine the optimal density of FQP and obtain a better nucleation process and the grain growth, we cast ingots using four different densities of FQP fixed on the bottom of the four quartz crucibles and covered them with a certain thickness of Si3N4 coating. FQP sizes of 30-50 mesh were used, and the influence of the fused quartz particle density on the nucleation mechanism, initial grain uniformity, grain size, density of dislocation clusters, and cell efficiency were analyzed. Compared with the ingots seeded with other three densities of FQP, the 220 particles/cm2 of FQP seeded ingot showed better uniformity of nucleation and initial grains. A large number of small uniform Si grains with lower density of dislocation clusters in the bottom of the ingot were observed. The average conversion efficiency of p-type solar cells manufactured with the 220 particles/cm2 seeded ingot (18.28%) was 0.19% higher than that manufactured with the 120 particles/cm2 seeded ingot (18.09%).

  12. On the Discontinuity of Polycrystalline Silicon Thin Films Realized by Aluminum-Induced Crystallization of PECVD-Deposited Amorphous Si

    NASA Astrophysics Data System (ADS)

    Pan, Qingtao; Wang, Tao; Yan, Hui; Zhang, Ming; Mai, Yaohua

    2017-04-01

    Crystallization of glass/Aluminum (50, 100, 200 nm) /hydrogenated amorphous silicon (a-Si:H) (50, 100, 200 nm) samples by Aluminum-induced crystallization (AIC) is investigated in this article. After annealing and wet etching, we found that the continuity of the polycrystalline silicon (poly-Si) thin films was strongly dependent on the double layer thicknesses. Increasing the a-Si:H/Al layer thickness ratio would improve the film microcosmic continuity. However, too thick Si layer might cause convex or peeling off during annealing. Scanning electron microscopy (SEM) and Energy Dispersive X-ray spectroscopy (EDX) are introduced to analyze the process of the peeling off. When the thickness ratio of a-Si:H/Al layer is around 1 to 1.5 and a-Si:H layer is less than 200 nm, the poly-Si film has a good continuity. Hall measurements are introduced to determine the electrical properties. Raman spectroscopy and X-ray diffraction (XRD) results show that the poly-Si film is completely crystallized and has a preferential (111) orientation.

  13. On the Discontinuity of Polycrystalline Silicon Thin Films Realized by Aluminum-Induced Crystallization of PECVD-Deposited Amorphous Si

    NASA Astrophysics Data System (ADS)

    Pan, Qingtao; Wang, Tao; Yan, Hui; Zhang, Ming; Mai, Yaohua

    2017-01-01

    Crystallization of glass/Aluminum (50, 100, 200 nm) /hydrogenated amorphous silicon (a-Si:H) (50, 100, 200 nm) samples by Aluminum-induced crystallization (AIC) is investigated in this article. After annealing and wet etching, we found that the continuity of the polycrystalline silicon (poly-Si) thin films was strongly dependent on the double layer thicknesses. Increasing the a-Si:H/Al layer thickness ratio would improve the film microcosmic continuity. However, too thick Si layer might cause convex or peeling off during annealing. Scanning electron microscopy (SEM) and Energy Dispersive X-ray spectroscopy (EDX) are introduced to analyze the process of the peeling off. When the thickness ratio of a-Si:H/Al layer is around 1 to 1.5 and a-Si:H layer is less than 200 nm, the poly-Si film has a good continuity. Hall measurements are introduced to determine the electrical properties. Raman spectroscopy and X-ray diffraction (XRD) results show that the poly-Si film is completely crystallized and has a preferential (111) orientation.

  14. Polycrystalline silicon material availability and market pricing outlook for 1980 through 1988

    NASA Technical Reports Server (NTRS)

    Costogue, E. N.; Ferber, R. R.

    1984-01-01

    The results of the second JPL update to an original report to assess the availability and prices of polycrystalline Si for solar cells in the 1983-88 interval are reported. It is noted that the demand for poly-Si for solar cells competes with the demand for the same material for semiconductors, although the solar cell industry can use material rejected from the semiconductor industry. A sufficient supply is projected for the 6 yr period, rising from 3224 metric tons to 10,220 metric tons in 1988, with prices dropping from the 1980 level of $140/kg to $25/kg. The price reduction and improved production are noted to be due in large part to DOE efforts at defining lower-cost production processes.

  15. Activation of ion-implanted polycrystalline silicon thin films prepared on glass substrates

    SciTech Connect

    So, Byoung-Soo; Bae, Seung-Muk; You, Yil-Hwan; Kim, Young-Hwan; Hwang, Jin-Ha

    2012-10-15

    Phosphorous-implanted polycrystalline Si thin films were subjected to thermal annealing between 300 °C and 650 °C. The thermal activation was monitored electrically and structurally using Hall measurements, Raman spectroscopy, UV–visible spectrophotometry, and transmission electron microscopy. Charge transport information was correlated to the corresponding structural evolution in thermal activation. Phosphorous-implanted activation is divided into short-range ordering at low temperatures and long-range ordering at high temperatures, with the boundary between low and high temperatures set at 425 °C. Short-range ordering allows for significant increase in electronic concentration through substitution of P for Si. Higher temperatures are attributed to long-range ordering, thereby increasing electronic mobility.

  16. A comparison of scattering and non-scattering anti-reflection designs for back contacted polycrystalline thin film silicon solar cells in superstrate configuration

    NASA Astrophysics Data System (ADS)

    Lockau, Daniel; Hammerschmidt, M.; Haschke, Jan; Blome, Mark; Ruske, F.; Schmidt, F.; Rech, B.

    2014-05-01

    A new generation of polycrystalline silicon thin film solar cells is currently being developed in laboratories, employing a combination of novel laser or electron beam based liquid phase crystallization (LPC) techniques and single side contacting systems. The lateral grain size of these polycrystalline cells is in the millimeter range at an absorber thickness of up to 10 μm. In this contribution we present a comparative simulation study of several 1D, 2D and 3D nano-optical designs for the substrate / illumination side interface to the several micrometer thick back contacted LPC silicon absorber material. The compared geometries comprise multilayer coatings, gratings with step and continuous profiles as well as combinations thereof. Using the transfer matrix method and a finite element method implementation to rigorously solve Maxwell's equations, we discuss anti-reflection and scattering properties of the different front interface designs in view of the angular distribution of incident light.

  17. A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires

    PubMed Central

    2012-01-01

    In this paper, a silicon-oxide-nitride-silicon nonvolatile memory constructed on an n+-poly-Si nanowire [NW] structure featuring a junctionless [JL] configuration is presented. The JL structure is fulfilled by employing only one in situ heavily phosphorous-doped poly-Si layer to simultaneously serve as source/drain regions and NW channels, thus greatly simplifying the manufacturing process and alleviating the requirement of precise control of the doping profile. Owing to the higher carrier concentration in the channel, the developed JL NW device exhibits significantly enhanced programming speed and larger memory window than its counterpart with conventional undoped-NW-channel. Moreover, it also displays acceptable erase and data retention properties. Hence, the desirable memory characteristics along with the much simplified fabrication process make the JL NW memory structure a promising candidate for future system-on-panel and three-dimensional ultrahigh density memory applications. PMID:22373446

  18. A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires.

    PubMed

    Su, Chun-Jung; Su, Tuan-Kai; Tsai, Tzu-I; Lin, Horng-Chih; Huang, Tiao-Yuan

    2012-02-29

    In this paper, a silicon-oxide-nitride-silicon nonvolatile memory constructed on an n+-poly-Si nanowire [NW] structure featuring a junctionless [JL] configuration is presented. The JL structure is fulfilled by employing only one in situ heavily phosphorous-doped poly-Si layer to simultaneously serve as source/drain regions and NW channels, thus greatly simplifying the manufacturing process and alleviating the requirement of precise control of the doping profile. Owing to the higher carrier concentration in the channel, the developed JL NW device exhibits significantly enhanced programming speed and larger memory window than its counterpart with conventional undoped-NW-channel. Moreover, it also displays acceptable erase and data retention properties. Hence, the desirable memory characteristics along with the much simplified fabrication process make the JL NW memory structure a promising candidate for future system-on-panel and three-dimensional ultrahigh density memory applications.

  19. Optimal angle of polycrystalline silicon solar panels placed in a building using the ant colony optimization algorithm

    NASA Astrophysics Data System (ADS)

    Saouane, I.; Chaker, A.; Zaidi, B.; Shekhar, C.

    2017-03-01

    This paper describes the mathematical model used to determine the amount of solar radiation received on an inclined solar photovoltaic panel. The optimum slope angles for each month, season, and year have also been calculated for a solar photovoltaic panel. The optimization of the procedure to maximize the solar energy collected by the solar panel by varying the tilt angle is also presented. As a first step, the global solar radiation on the horizontal surface of a thermal photovoltaic panel during clear sky is estimated. Thereafter, the Muneer model, which provides the most accurate estimation of the total solar radiation at a given geographical point has been used to determine the optimum collector slope. Also, the Ant Colony Optimization (ACO) algorithm was applied to obtain the optimum tilt angle settings for PV collector to improve the PV collector efficiency. The results show good agreement between calculated and predicted results. Additionally, this paper presents studies carried out on the polycrystalline silicon solar panels for electrical energy generation in the city of Ghardaia. The electrical energy generation has been studied as a function of amount of irradiation received and the angle of optimum orientation of the solar panels.

  20. Enhanced Extraction of Silicon-Vacancy Centers Light Emission Using Bottom-Up Engineered Polycrystalline Diamond Photonic Crystal Slabs.

    PubMed

    Ondič, Lukáš; Varga, Marian; Hruška, Karel; Fait, Jan; Kapusta, Peter

    2017-03-03

    Silicon vacancy (SiV) centers are optically active defects in diamond. The SiV centers, in contrast to nitrogen vacancy (NV) centers, possess narrow and efficient luminescence spectrum (centered at ≈738 nm) even at room temperature, which can be utilized for quantum photonics and sensing applications. However, most of light generated in diamond is trapped in the material due to the phenomenon of total internal reflection. In order to overcome this issue, we have prepared two-dimensional photonic crystal slabs from polycrystalline diamond thin layers with high density of SiV centers employing bottom-up growth on quartz templates. We have shown that the spectral overlap between the narrow light emission of the SiV centers and the leaky modes extracting the emission into almost vertical direction (where it can be easily detected) can be obtained by controlling the deposition time. More than 14-fold extraction enhancement of the SiV centers photoluminescence was achieved compared to an uncorrugated sample. Computer simulation confirmed that the extraction enhancement originates from the efficient light-matter interaction between light emitted from the SiV centers and the photonic crystal slab.

  1. Modified data analysis for thermal conductivity measurements of polycrystalline silicon microbridges using a steady state Joule heating technique.

    PubMed

    Sayer, Robert A; Piekos, Edward S; Phinney, Leslie M

    2012-12-01

    Accurate knowledge of thermophysical properties is needed to predict and optimize the thermal performance of microsystems. Thermal conductivity is experimentally determined by measuring quantities such as voltage or temperature and then inferring a thermal conductivity from a thermal model. Thermal models used for data analysis contain inherent assumptions, and the resultant thermal conductivity value is sensitive to how well the actual experimental conditions match the model assumptions. In this paper, a modified data analysis procedure for the steady state Joule heating technique is presented that accounts for bond pad effects including thermal resistance, electrical resistance, and Joule heating. This new data analysis method is used to determine the thermal conductivity of polycrystalline silicon (polysilicon) microbridges fabricated using the Sandia National Laboratories SUMMiT V™ micromachining process over the temperature range of 77-350 K, with the value at 300 K being 71.7 ± 1.5 W/(m K). It is shown that making measurements on beams of multiple lengths is useful, if not essential, for inferring the correct thermal conductivity from steady state Joule heating measurements.

  2. Modified data analysis for thermal conductivity measurements of polycrystalline silicon microbridges using a steady state Joule heating technique

    NASA Astrophysics Data System (ADS)

    Sayer, Robert A.; Piekos, Edward S.; Phinney, Leslie M.

    2012-12-01

    Accurate knowledge of thermophysical properties is needed to predict and optimize the thermal performance of microsystems. Thermal conductivity is experimentally determined by measuring quantities such as voltage or temperature and then inferring a thermal conductivity from a thermal model. Thermal models used for data analysis contain inherent assumptions, and the resultant thermal conductivity value is sensitive to how well the actual experimental conditions match the model assumptions. In this paper, a modified data analysis procedure for the steady state Joule heating technique is presented that accounts for bond pad effects including thermal resistance, electrical resistance, and Joule heating. This new data analysis method is used to determine the thermal conductivity of polycrystalline silicon (polysilicon) microbridges fabricated using the Sandia National Laboratories SUMMiT V™ micromachining process over the temperature range of 77-350 K, with the value at 300 K being 71.7 ± 1.5 W/(m K). It is shown that making measurements on beams of multiple lengths is useful, if not essential, for inferring the correct thermal conductivity from steady state Joule heating measurements.

  3. Magnetic-composite-modified polycrystalline silicon nanowire field-effect transistor for vascular endothelial growth factor detection and cancer diagnosis.

    PubMed

    Chen, Hsiao-Chien; Qiu, Jian-Tai; Yang, Fu-Liang; Liu, Yin-Chih; Chen, Min-Cheng; Tsai, Rung-Ywan; Yang, Hung-Wei; Lin, Chia-Yi; Lin, Chu-Chi; Wu, Tzong-Shoon; Tu, Yi-Ming; Xiao, Min-Cong; Ho, Chia-Hua; Huang, Chien-Chao; Lai, Chao-Sung; Hua, Mu-Yi

    2014-10-07

    This study proposes a vascular endothelial growth factor (VEGF) biosensor for diagnosing various stages of cervical carcinoma. In addition, VEGF concentrations at various stages of cancer therapy are determined and compared to data obtained by computed tomography (CT) and cancer antigen 125 (CA-125). The increase in VEGF concentrations during operations offers useful insight into dosage timing during cancer therapy. This biosensor uses Avastin as the biorecognition element for the potential cancer biomarker VEGF and is based on a n-type polycrystalline silicon nanowire field-effect transistor (poly-SiNW-FET). Magnetic nanoparticles with poly[aniline-co-N-(1-one-butyric acid) aniline]-Fe3O4 (SPAnH-Fe3O4) shell-core structures are used as carriers for Avastin loading and provide rapid purification due to their magnetic properties, which prevent the loss of bioactivity; furthermore, the high surface area of these structures increases the quantity of Avastin immobilized. Average concentrations in human blood for species that interfere with detection specificity are also evaluated. The detection range of the biosensor for serum samples covers the results expected from both healthy individuals and cancer patients.

  4. High-Performance TiO2 -Based Electron-Selective Contacts for Crystalline Silicon Solar Cells.

    PubMed

    Yang, Xinbo; Bi, Qunyu; Ali, Haider; Davis, Kristopher; Schoenfeld, Winston V; Weber, Klaus

    2016-07-01

    Thin TiO2 films are demonstrated to be an excellent electron-selective contact for crystalline silicon solar cells. An efficiency of 21.6% is achieved for crystalline silicon solar cells featuring a full-area TiO2 -based electron-selective contact.

  5. Sodium Accumulation at Potential-Induced Degradation Shunted Areas in Polycrystalline Silicon Modules

    SciTech Connect

    Harvey, Steven P.; Aguiar, Jeffery A.; Hacke, Peter; Guthrey, Harvey; Johnston, Steve; Al-Jassim, Mowafak

    2016-11-01

    We investigated potential-induced degradation (PID) in silicon mini-modules that were subjected to accelerated stressing to induce PID conditions. Shunted areas on the cells were identified with photoluminescence and dark lock-in thermography (DLIT) imaging. The identical shunted areas were then analyzed via time-of-flight secondary-ion mass spectrometry (TOFSIMS) imaging, 3-D tomography, and high-resolution transmission electron microscopy. The TOF-SIMS imaging indicates a high concentration of sodium in the shunted areas, and 3-D tomography reveals that the sodium extends more than 2 um from the surface below shunted regions. Transmission electron microscopy investigation reveals that a stacking fault is present at an area identified as shunted by DLIT imaging. After the removal of surface sodium, tomography reveals persistent sodium present around the junction depth of 300 nm and a drastic difference in sodium content at the junction when comparing shunted and nonshunted regions.

  6. Interfacial Layer Control by Dry Cleaning Technology for Polycrystalline and Single Crystalline Silicon Growth.

    PubMed

    Im, Dong-Hyun; Kong-Soo Lee; Kang, Yoongoo; Jeong, Myoungho; Park, Kwang Wuk; Lee, Soon-Gun; Ma, Jin-Won; Kim, Youngseok; Kim, Bonghyun; Im, Ki-Vin; Lim, Hanjin; Lee, Jeong Yong

    2016-05-01

    Native oxide removal prior to poly-Si contact and epitaxial growth of Si is the most critical technology to ensure process and device performances of poly-Si plugs and selective epitaxial growth (SEG) layers for DRAM, flash memory, and logic device. Recently, dry cleaning process for interfacial oxide removal has attracted a world-wide attention due to its superior passivation properties to conventional wet cleaning processes. In this study, we investigated the surface states of Si substrate during and after dry cleaning process, and the role of atomic elements including fluorine and hydrogen on the properties of subsequent deposited silicon layer using SIMS, XPS, and TEM analysis. The controlling of residual fluorine on the Si surface after dry cleaning is a key factor for clean interface. The mechanism of native oxide re-growth caused by residual fluorine after dry cleaning is proposed based on analytical results.

  7. Spray drying method for large-scale and high-performance silicon negative electrodes in Li-ion batteries.

    PubMed

    Jung, Dae Soo; Hwang, Tae Hoon; Park, Seung Bin; Choi, Jang Wook

    2013-05-08

    Nanostructured silicon electrodes have shown great potential as lithium ion battery anodes because they can address capacity fading mechanisms originating from large volume changes of silicon alloys while delivering extraordinarily large gravimetric capacities. Nonetheless, synthesis of well-defined silicon nanostructures in an industrially adaptable scale still remains as a challenge. Herein, we adopt an industrially established spray drying process to enable scalable synthesis of silicon-carbon composite particles in which silicon nanoparticles are embedded in porous carbon particles. The void space existing in the porous carbon accommodates the volume expansion of silicon and thus addresses the chronic fading mechanisms of silicon anodes. The composite electrodes exhibit excellent electrochemical performance, such as 1956 mAh/g at 0.05C rate and 91% capacity retention after 150 cycles. Moreover, the spray drying method requires only 2 s for the formation of each particle and allows a production capability of ~10 g/h even with an ultrasonic-based lab-scale equipment. This investigation suggests that established industrial processes could be adaptable to the production of battery active materials that require sophisticated nanostructures as well as large quantity syntheses.

  8. Facile synthesis of binder-free reduced graphene oxide/silicon anode for high-performance lithium ion batteries

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Zuo, Pengjian; Chen, Cheng; Ma, Yulin; Cheng, Xinqun; Du, Chunyu; Gao, Yunzhi; Yin, Geping

    2016-04-01

    A novel binder-free reduced graphene oxide/silicon (RGO/Si) composite anode has been fabricated by a facile doctor-blade coating method. The relatively low C/O ratio plays an important role for the fabrication of the bind-free multilayered RGO/Si electrode with silicon nanoparticles encapsulating among the RGO sheet layers. The RGO provides the electron transport pathway and prevents the electrode fracture caused by the volume changes of active silicon particles during cycling. The RGO/Si composite anode with a silicon content of 66.7% delivers a reversible capacity of 1931 mAh g-1 at 0.2 A g-1 and still remains 92% of the initial capacity after 50 cycles.

  9. High-performance liquid chromatographic determination of 17beta-estradiol and 17beta-estradiol-3-acetate solubilities and diffusion coefficents in silicone elastromeric intravaginal rings.

    PubMed

    Russell, J A; Malcolm, R K; Campbell, K; Woolfson, A D

    2000-07-07

    A rapid, sensitive reversed-phase high-performance liquid chromatographic method has been developed for the determination of in vitro release of 17beta-estradiol and its ester prodrug, 17beta-estradiol-3-acetate, from silicone intravaginal rings. Partial hydrolysis of the acetate under the aqueous conditions provided by the 1% benzalkonium chloride release medium necessitates its conversion to 17beta-estradiol prior to HPLC analysis. Both steroid peaks have been fully resolved from the benzalkonium chloride peaks by the reported chromatographic method, which employs a C18 bonded reversed-phase column, an acetonitrile-water (50:50, v/v) mobile phase and a UV detection wavelength of 281 nm. The peak area versus 17beta-estradiol concentration was found to be linear over the range of 0.0137-1347 microkg ml(-1). The HPLC method has also been used to determine the silicone solubilities and diffusion coefficients of the two related steroids. The almost 100-fold increase in 17beta-estradiol-3-acetate release from the silicone core-type intravaginal rings compared to 17beta-estradiol is shown to be due to a 60-fold increase in silicone solubility and a one and a half-fold increase in diffusitivity. The results demonstrate that an effective estrogen replacement therapy dose of 17beta-estradiol may be administered from a silicone intravaginal reservoir device containing the labile 17beta-estradiol-3-acetate prodrug.

  10. Fabrication and Analysis of Three-Layer All-Silicon Interference Optical Filter with Sub-Wavelength Structure toward High Performance Terahertz Optics

    NASA Astrophysics Data System (ADS)

    Makitsubo, Hironobu; Wada, Takehiko; Kataza, Hirokazu; Mita, Makoto; Suzuki, Toyoaki; Yamamoto, Keita

    2017-02-01

    We propose an all-silicon multi-layer interference filter composed solely of silicon with sub-wavelength structure (SWS) in order to realize high performance optical filters operating in the THz frequency region with robustness against cryogenic thermal cycling and mechanical damage. We demonstrate fabrication of a three-layer prototype using well-established common micro-electro-mechanical systems (MEMS) technologies as a first step toward developing practical filters. The measured transmittance of the three-layer filter agrees well with the theoretical transmittances calculated by a simple thin-film calculation with effective refractive indices as well as a rigorous coupled-wave analysis simulation. We experimentally show that SWS layers can work as homogeneous thin-film interference layers with effective refractive indices even if there are multiple SWS layers in a filter.

  11. In situ thermally cross-linked polyacrylonitrile as binder for high-performance silicon as lithium ion battery anode.

    PubMed

    Shen, Lanyao; Shen, Lian; Wang, Zhaoxiang; Chen, Liquan

    2014-07-01

    Electrode integrity and electric contact between particles and between particle and current collector are critical for electrochemical performance, especially for that of electrode materials with large volume change during cycling and with poor electric conductivity. We report on the in situ thermally cross-linked polyacrylonitrile (PAN) as a binder for silicon-based anodes of lithium-ion batteries. The electrode delivers excellent cycle life and rate capability with a reversible capacity of about 1450 mA h g(-1) even after 100 cycles. The improved electrochemical performance of such silicon electrodes is attributed to heat-treatment-induced cross-linking and the formation of conjugated PAN. These findings open new avenues to explore other polymers for both anode and cathode electrodes of rechargeable batteries.

  12. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric.

    PubMed

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-06-21

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator.

  13. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric

    PubMed Central

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-01-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator. PMID:27325155

  14. Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors.

    PubMed

    El-Mohri, Youcef; Antonuk, Larry E; Koniczek, Martin; Zhao, Qihua; Li, Yixin; Street, Robert A; Lu, Jeng-Ping

    2009-07-01

    Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and/or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of approximately 10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in

  15. Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors

    PubMed Central

    El-Mohri, Youcef; Antonuk, Larry E.; Koniczek, Martin; Zhao, Qihua; Li, Yixin; Street, Robert A.; Lu, Jeng-Ping

    2009-01-01

    Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and∕or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of ∼10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in optical fill

  16. High Performance Polymers

    NASA Technical Reports Server (NTRS)

    Venumbaka, Sreenivasulu R.; Cassidy, Patrick E.

    2003-01-01

    This report summarizes results from research on high performance polymers. The research areas proposed in this report include: 1) Effort to improve the synthesis and to understand and replicate the dielectric behavior of 6HC17-PEK; 2) Continue preparation and evaluation of flexible, low dielectric silicon- and fluorine- containing polymers with improved toughness; and 3) Synthesis and characterization of high performance polymers containing the spirodilactam moiety.

  17. Dual yolk-shell structure of carbon and silica-coated silicon for high-performance lithium-ion batteries

    PubMed Central

    Yang, L. Y.; Li, H. Z.; Liu, J.; Sun, Z. Q.; Tang, S. S.; Lei, M.

    2015-01-01

    Silicon batteries have attracted much attention in recent years due to their high theoretical capacity, although a rapid capacity fade is normally observed, attributed mainly to volume expansion during lithiation. Here, we report for the first time successful synthesis of Si/void/SiO2/void/C nanostructures. The synthesis strategy only involves selective etching of SiO2 in Si/SiO2/C structures with hydrofluoric acid solution. Compared with reported results, such novel structures include a hard SiO2-coated layer, a conductive carbon-coated layer, and two internal void spaces. In the structures, the carbon can enhance conductivity, the SiO2 layer has mechanically strong qualities, and the two internal void spaces can confine and accommodate volume expansion of silicon during lithiation. Therefore, these specially designed dual yolk-shell structures exhibit a stable and high capacity of 956 mA h g−1 after 430 cycles with capacity retention of 83%, while the capacity of Si/C core-shell structures rapidly decreases in the first ten cycles under the same experimental conditions. The novel dual yolk-shell structures developed for Si can also be extended to other battery materials that undergo large volume changes. PMID:26039972

  18. High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

    SciTech Connect

    Wang, Zihao; Preble, Stefan F.; Yao, Ruizhe; Lee, Chi-Sen; Guo, Wei; Lester, Luke F.

    2015-12-28

    InAs quantum dot (QD) laser heterostructures have been grown by molecular beam epitaxy system on GaAs substrates, and then transferred to silicon substrates by a low temperature (250 °C) Pd-mediated wafer bonding process. A low interfacial resistivity of only 0.2 Ω cm{sup 2} formed during the bonding process is characterized by the current-voltage measurements. The InAs QD lasers on Si exhibit comparable characteristics to state-of-the-art QD lasers on silicon substrates, where the threshold current density J{sub th} and differential quantum efficiency η{sub d} of 240 A/cm{sup 2} and 23.9%, respectively, at room temperature are obtained with laser bars of cavity length and waveguide ridge of 1.5 mm and 5 μm, respectively. The InAs QD lasers also show operation up to 100 °C with a threshold current density J{sub th} and differential quantum efficiency η{sub d} of 950 A/cm{sup 2} and 9.3%, respectively. The temperature coefficient T{sub 0} of 69 K from 60 to 100 °C is characterized from the temperature dependent J{sub th} measurements.

  19. A silicon nanowire-reduced graphene oxide composite as a high-performance lithium ion battery anode material.

    PubMed

    Ren, Jian-Guo; Wang, Chundong; Wu, Qi-Hui; Liu, Xiang; Yang, Yang; He, Lifang; Zhang, Wenjun

    2014-03-21

    Toward the increasing demands of portable energy storage and electric vehicle applications, silicon has been emerging as a promising anode material for lithium-ion batteries (LIBs) owing to its high specific capacity. However, serious pulverization of bulk silicon during cycling limits its cycle life. Herein, we report a novel hierarchical Si nanowire (Si NW)-reduced graphene oxide (rGO) composite fabricated using a solvothermal method followed by a chemical vapor deposition process. In the composite, the uniform-sized [111]-oriented Si NWs are well dispersed on the rGO surface and in between rGO sheets. The flexible rGO enables us to maintain the structural integrity and to provide a continuous conductive network of the electrode, which results in over 100 cycles serving as an anode in half cells at a high lithium storage capacity of 2300 mA h g(-1). Due to its [111] growth direction and the large contact area with rGO, the Si NWs in the composite show substantially enhanced reaction kinetics compared with other Si NWs or Si particles.

  20. 3D hierarchical assembly of ultrathin MnO2 nanoflakes on silicon nanowires for high performance micro-supercapacitors in Li- doped ionic liquid

    PubMed Central

    Dubal, Deepak P.; Aradilla, David; Bidan, Gérard; Gentile, Pascal; Schubert, Thomas J.S.; Wimberg, Jan; Sadki, Saïd; Gomez-Romero, Pedro

    2015-01-01

    Building of hierarchical core-shell hetero-structures is currently the subject of intensive research in the electrochemical field owing to its potential for making improved electrodes for high-performance micro-supercapacitors. Here we report a novel architecture design of hierarchical MnO2@silicon nanowires (MnO2@SiNWs) hetero-structures directly supported onto silicon wafer coupled with Li-ion doped 1-Methyl-1-propylpyrrolidinium bis(trifluromethylsulfonyl)imide (PMPyrrBTA) ionic liquids as electrolyte for micro-supercapacitors. A unique 3D mesoporous MnO2@SiNWs in Li-ion doped IL electrolyte can be cycled reversibly across a voltage of 2.2 V and exhibits a high areal capacitance of 13 mFcm−2. The high conductivity of the SiNWs arrays combined with the large surface area of ultrathin MnO2 nanoflakes are responsible for the remarkable performance of these MnO2@SiNWs hetero-structures which exhibit high energy density and excellent cycling stability. This combination of hybrid electrode and hybrid electrolyte opens up a novel avenue to design electrode materials for high-performance micro-supercapacitors. PMID:25985388

  1. Gold@silver bimetal nanoparticles/pyramidal silicon 3D substrate with high reproducibility for high-performance SERS

    NASA Astrophysics Data System (ADS)

    Zhang, Chao; Jiang, Shou Zhen; Yang, Cheng; Li, Chong Hui; Huo, Yan Yan; Liu, Xiao Yun; Liu, Ai Hua; Wei, Qin; Gao, Sai Sai; Gao, Xing Guo; Man, Bao Yuan

    2016-05-01

    A novel and efficient surface enhanced Raman scattering (SERS) substrate has been presented based on Gold@silver/pyramidal silicon 3D substrate (Au@Ag/3D-Si). By combining the SERS activity of Ag, the chemical stability of Au and the large field enhancement of 3D-Si, the Au@Ag/3D-Si substrate possesses perfect sensitivity, homogeneity, reproducibility and chemical stability. Using R6G as probe molecule, the SERS results imply that the Au@Ag/3D-Si substrate is superior to the 3D-Si, Ag/3D-Si and Au/3D-Si substrate. We also confirmed these excellent behaviors in theory via a commercial COMSOL software. The corresponding experimental and theoretical results indicate that our proposed Au@Ag/3D-Si substrate is expected to develop new opportunities for label-free SERS detections in biological sensors, biomedical diagnostics and food safety.

  2. Supported growth of polycrystalline silicon sheet on low-cost ceramic, carbon, or reusable substrate. Quarterly report No. 1, September 26-December 31, 1979

    SciTech Connect

    Chapman, P.W.; Heaps, J.D.; Schuldt, S.B.; Zook, J.D.

    1980-02-01

    The overall objective of this program is to identify and develop high-throughput, supported-growth methods for producing low-cost, large-area polycrystalline silicon sheet on ceramic, carbon, or reusable substrates. The first method being investigated is the SCIM coating technique. (SCIM is an acronym for Silicon Coating by Inverted Meniscus.) With this technique, a low-cost ceramic substrate is silicon-coated in a continuous manner by passing the substrate over a molten silicon meniscus which is contained in a narrow fused-silica trough. During this reporting period, several mullite substrates were silicon-coated with this method. The best coatings were approximately 100 ..mu..m thick with large columnar grains up to 0.5 cm wide and several cm long. Structural characterization of these coatings shows that these large grains are heavily twinned with boundaries perpendicular to the surface of the layer. Minority-carrier diffusion length measurements made on photodiodes fabricated from these coatings indicate diffusion lengths of about 25 ..mu..m. The short-circuit current densities of the diodes were about 23 mA/cm/sup 2/, with open-circuit voltages of approximately 0.49 V. With the substrates positioned horizontally as they pass over the meniscus trough, instability usually occurs, causing a buildup of molten silicon immediately downstream from the trough. This solicon eventually spills over onto key parts of the coater. By tilting the substrate at angles of 10, 15, and 20/sup 0/, stability can be achieved. A theoretical study of meniscus shapes conducted during this reporting period suggests that with an appropriate trough design and the right pressure and substrate height, a SCIM-coating with horizontal substrates should also be possible.

  3. Methods for Producing High-Performance Silicon Carbide Fibers, Architectural Preforms, and High-Temperature Composite Structures

    NASA Technical Reports Server (NTRS)

    DiCarlo, James A. (Inventor); Yun, Hee-Mann (Inventor)

    2014-01-01

    Methods are disclosed for producing architectural preforms and high-temperature composite structures containing high-strength ceramic fibers with reduced preforming stresses within each fiber, with an in-situ grown coating on each fiber surface, with reduced boron within the bulk of each fiber, and with improved tensile creep and rupture resistance properties tier each fiber. The methods include the steps of preparing an original sample of a preform formed from a pre-selected high-strength silicon carbide ceramic fiber type, placing the original sample in a processing furnace under a pre-selected preforming stress state and thermally treating the sample in the processing furnace at a pre-selected processing temperature and hold time in a processing gas having a pre-selected composition, pressure, and flow rate. For the high-temperature composite structures, the method includes additional steps of depositing a thin interphase coating on the surface of each fiber and forming a ceramic or carbon-based matrix within the sample.

  4. Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microeletronic [corrected] devices.

    PubMed

    Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M; Calzada, M Lourdes

    2016-02-03

    Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound--morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT)--are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm(-2) is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics.

  5. Poly (acrylic acid sodium) grafted carboxymethyl cellulose as a high performance polymer binder for silicon anode in lithium ion batteries

    PubMed Central

    Wei, Liangming; Chen, Changxin; Hou, Zhongyu; Wei, Hao

    2016-01-01

    The design of novel binder systems is required for the high capacity silicon (Si) anodes which usually undergo huge volume change during the charge/discharge cycling. Here, we introduce a poly (acrylic acid sodium)-grafted-carboxymethyl cellulose (NaPAA-g-CMC) copolymer as an excellent binder for Si anode in lithium ion batteries (LIBs). The NaPAA-g-CMC copolymer was prepared via a free radical graft polymerization method by using CMC and acrylic acid as precursors. Unlike the linear, one-dimensional binders, the NaPAA-g-CMC copolymer binder is expected to present multi-point interaction with Si surface, resulting in enhanced binding ability with Si particles as well as with the copper (Cu) current collectors, and building a stable solid electrolyte interface (SEI) layer on the Si surface. The NaPAA-g-CMC based Si anode shows much better cycle stability and higher coulombic efficiency than those made with the well-known linear polymeric binders such as CMC and NaPPA. PMID:26786315

  6. Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelecronic devices

    NASA Astrophysics Data System (ADS)

    Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M.; Calzada, M. Lourdes

    2016-02-01

    Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound – morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT) – are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm‑2 is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics.

  7. Scattering effect of the high-index dielectric nanospheres for high performance hydrogenated amorphous silicon thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Yang, Zhenhai; Gao, Pingqi; Zhang, Cheng; Li, Xiaofeng; Ye, Jichun

    2016-07-01

    Dielectric nanosphere arrays are considered as promising light-trapping designs with the capability of transforming the freely propagated sunlight into guided modes. This kinds of designs are especially beneficial to the ultrathin hydrogenated amorphous silicon (a-Si:H) solar cells due to the advantages of using lossless material and easily scalable assembly. In this paper, we demonstrate numerically that the front-sided integration of high-index subwavelength titanium dioxide (TiO2) nanosphere arrays can significantly enhance the light absorption in 100 nm-thick a-Si:H thin films and thus the power conversion efficiencies (PCEs) of related solar cells. The main reason behind is firmly attributed to the strong scattering effect excited by TiO2 nanospheres in the whole waveband, which contributes to coupling the light into a-Si:H layer via two typical ways: 1) in the short-waveband, the forward scattering of TiO2 nanospheres excite the Mie resonance, which focuses the light into the surface of the a-Si:H layer and thus provides a leaky channel; 2) in the long-waveband, the transverse waveguided modes caused by powerful scattering effectively couple the light into almost the whole active layer. Moreover, the finite-element simulations demonstrate that photocurrent density (Jph) can be up to 15.01 mA/cm2, which is 48.76% higher than that of flat system.

  8. Scattering effect of the high-index dielectric nanospheres for high performance hydrogenated amorphous silicon thin-film solar cells

    PubMed Central

    Yang, Zhenhai; Gao, Pingqi; Zhang, Cheng; Li, Xiaofeng; Ye, Jichun

    2016-01-01

    Dielectric nanosphere arrays are considered as promising light-trapping designs with the capability of transforming the freely propagated sunlight into guided modes. This kinds of designs are especially beneficial to the ultrathin hydrogenated amorphous silicon (a-Si:H) solar cells due to the advantages of using lossless material and easily scalable assembly. In this paper, we demonstrate numerically that the front-sided integration of high-index subwavelength titanium dioxide (TiO2) nanosphere arrays can significantly enhance the light absorption in 100 nm-thick a-Si:H thin films and thus the power conversion efficiencies (PCEs) of related solar cells. The main reason behind is firmly attributed to the strong scattering effect excited by TiO2 nanospheres in the whole waveband, which contributes to coupling the light into a-Si:H layer via two typical ways: 1) in the short-waveband, the forward scattering of TiO2 nanospheres excite the Mie resonance, which focuses the light into the surface of the a-Si:H layer and thus provides a leaky channel; 2) in the long-waveband, the transverse waveguided modes caused by powerful scattering effectively couple the light into almost the whole active layer. Moreover, the finite-element simulations demonstrate that photocurrent density (Jph) can be up to 15.01 mA/cm2, which is 48.76% higher than that of flat system. PMID:27455911

  9. Scattering effect of the high-index dielectric nanospheres for high performance hydrogenated amorphous silicon thin-film solar cells.

    PubMed

    Yang, Zhenhai; Gao, Pingqi; Zhang, Cheng; Li, Xiaofeng; Ye, Jichun

    2016-07-26

    Dielectric nanosphere arrays are considered as promising light-trapping designs with the capability of transforming the freely propagated sunlight into guided modes. This kinds of designs are especially beneficial to the ultrathin hydrogenated amorphous silicon (a-Si:H) solar cells due to the advantages of using lossless material and easily scalable assembly. In this paper, we demonstrate numerically that the front-sided integration of high-index subwavelength titanium dioxide (TiO2) nanosphere arrays can significantly enhance the light absorption in 100 nm-thick a-Si:H thin films and thus the power conversion efficiencies (PCEs) of related solar cells. The main reason behind is firmly attributed to the strong scattering effect excited by TiO2 nanospheres in the whole waveband, which contributes to coupling the light into a-Si:H layer via two typical ways: 1) in the short-waveband, the forward scattering of TiO2 nanospheres excite the Mie resonance, which focuses the light into the surface of the a-Si:H layer and thus provides a leaky channel; 2) in the long-waveband, the transverse waveguided modes caused by powerful scattering effectively couple the light into almost the whole active layer. Moreover, the finite-element simulations demonstrate that photocurrent density (Jph) can be up to 15.01 mA/cm(2), which is 48.76% higher than that of flat system.

  10. Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelecronic devices

    PubMed Central

    Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M.; Calzada, M. Lourdes

    2016-01-01

    Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound ─ morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT) ─ are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm−2 is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics. PMID:26837240

  11. Rice husks as a sustainable source of nanostructured silicon for high performance Li-ion battery anodes

    PubMed Central

    Liu, Nian; Huo, Kaifu; McDowell, Matthew T.; Zhao, Jie; Cui, Yi

    2013-01-01

    The recovery of useful materials from earth-abundant substances is of strategic importance for industrial processes. Despite the fact that Si is the second most abundant element in the Earth's crust, processes to form Si nanomaterials is usually complex, costly and energy-intensive. Here we show that pure Si nanoparticles (SiNPs) can be derived directly from rice husks (RHs), an abundant agricultural byproduct produced at a rate of 1.2 × 108 tons/year, with a conversion yield as high as 5% by mass. And owing to their small size (10–40 nm) and porous nature, these recovered SiNPs exhibits high performance as Li-ion battery anodes, with high reversible capacity (2,790 mA h g−1, seven times greater than graphite anodes) and long cycle life (86% capacity retention over 300 cycles). Using RHs as the raw material source, overall energy-efficient, green, and large scale synthesis of low-cost and functional Si nanomaterials is possible. PMID:23715238

  12. Facile Synthesis of Carbon-Coated Silicon/Graphite Spherical Composites for High-Performance Lithium-Ion Batteries.

    PubMed

    Kim, So Yeun; Lee, Jaewoo; Kim, Bo-Hye; Kim, Young-Jun; Yang, Kap Seung; Park, Min-Sik

    2016-05-18

    A high-performance Si/carbon/graphite composite in which Si nanoparticles are attached onto the surface of natural graphite by carbonization of coal-tar pitch is proposed for use in lithium-ion batteries. This multicomponent structure is favorable for improving Li(+) storage capability because the amorphous carbon layer encapsulating Si nanoparticles offers sufficient electric conductivity and strong elasticity to facilitate relaxation of strain caused by electrochemical reaction of Si during cycles. The Si/carbon/graphite composite exhibits a specific capacity of 712 mAh g(-1) at a constant current density of 130 mA g(-1), and maintains more than 80% of its initial capacity after 100 cycles. Moreover, it shows a high capacity retention of approximately 88% even at a high current density of 5 C (3250 mA g(-1)). On the basis of electrochemical and structural analyses, we suggest that a rational design of the Si/carbon/graphite composite is mainly responsible for delivering a high reversible capacity and stable cycle performance. Furthermore, the proposed synthetic route for the Si/carbon/graphite composite is simple and cost-effective for mass production.

  13. Rice husks as a sustainable source of nanostructured silicon for high performance Li-ion battery anodes

    NASA Astrophysics Data System (ADS)

    Liu, Nian; Huo, Kaifu; McDowell, Matthew T.; Zhao, Jie; Cui, Yi

    2013-05-01

    The recovery of useful materials from earth-abundant substances is of strategic importance for industrial processes. Despite the fact that Si is the second most abundant element in the Earth's crust, processes to form Si nanomaterials is usually complex, costly and energy-intensive. Here we show that pure Si nanoparticles (SiNPs) can be derived directly from rice husks (RHs), an abundant agricultural byproduct produced at a rate of 1.2 × 108 tons/year, with a conversion yield as high as 5% by mass. And owing to their small size (10-40 nm) and porous nature, these recovered SiNPs exhibits high performance as Li-ion battery anodes, with high reversible capacity (2,790 mA h g-1, seven times greater than graphite anodes) and long cycle life (86% capacity retention over 300 cycles). Using RHs as the raw material source, overall energy-efficient, green, and large scale synthesis of low-cost and functional Si nanomaterials is possible.

  14. Rice husks as a sustainable source of nanostructured silicon for high performance Li-ion battery anodes.

    PubMed

    Liu, Nian; Huo, Kaifu; McDowell, Matthew T; Zhao, Jie; Cui, Yi

    2013-01-01

    The recovery of useful materials from earth-abundant substances is of strategic importance for industrial processes. Despite the fact that Si is the second most abundant element in the Earth's crust, processes to form Si nanomaterials is usually complex, costly and energy-intensive. Here we show that pure Si nanoparticles (SiNPs) can be derived directly from rice husks (RHs), an abundant agricultural byproduct produced at a rate of 1.2 × 10(8) tons/year, with a conversion yield as high as 5% by mass. And owing to their small size (10-40 nm) and porous nature, these recovered SiNPs exhibits high performance as Li-ion battery anodes, with high reversible capacity (2,790 mA h g(-1), seven times greater than graphite anodes) and long cycle life (86% capacity retention over 300 cycles). Using RHs as the raw material source, overall energy-efficient, green, and large scale synthesis of low-cost and functional Si nanomaterials is possible.

  15. Development of High-Performance eSWIR HgCdTe-Based Focal-Plane Arrays on Silicon Substrates

    NASA Astrophysics Data System (ADS)

    Park, J. H.; Pepping, J.; Mukhortova, A.; Ketharanathan, S.; Kodama, R.; Zhao, J.; Hansel, D.; Velicu, S.; Aqariden, F.

    2016-09-01

    We report the development of high-performance and low-cost extended short-wavelength infrared (eSWIR) focal-plane arrays (FPAs) fabricated from molecular beam epitaxial (MBE)-grown HgCdTe on Si-based substrates. High-quality n-type eSWIR HgCdTe (cutoff wavelength ˜2.68 μm at 77 K, electron carrier concentration 5.82 × 1015 cm-3) layers were grown on CdTe/Si substrates by MBE. High degrees of uniformity in composition and thickness were demonstrated over three-inch areas, and low surface defect densities (voids 9.56 × 101 cm-2, micro-defects 1.67 × 103 cm-2) were measured. This material was used to fabricate 320 × 256 format, 30 μm pitch FPAs with a planar device architecture using arsenic implantation to achieve p-type doping. The dark current density of test devices showed good uniformity between 190 K and room temperature, and high-quality eSWIR imaging from hybridized FPAs was obtained with a median dark current density of 2.63 × 10-7 A/cm2 at 193 K with a standard deviation of 1.67 × 10-7 A/cm2.

  16. Optimization of heat transfer by adjusting power ratios between top and side heaters for casting high-performance multi-crystalline silicon ingots

    NASA Astrophysics Data System (ADS)

    Chen, Wenliang; Wu, Zhiyong; Zhong, Genxiang; Ding, Junjing; Yu, Yunyang; Zhou, Xucheng; Huang, Xinming

    2016-10-01

    Numerical simulations were applied to analyze the effects of the power ratios between top and side heaters on the crystal-melt (c-m) interface and the thermal stress distribution during the solidification process. The simulation results showed that among the different increase velocities of the power ratio, increasing the power ratio uniformly provided a most favorable solidification process: a slightly convex c-m interface shape and low thermal stress were obtained. The optimized design was implemented in casting experiments, which showed that the high-performance multi-crystalline silicon ingot had a vertical columnar structure and a lower dislocation density. The average conversion efficiency of solar cells was about 0.08% higher with this design (18.24%) than with the original design (18.16%).

  17. Heated ion implantation for high-performance and highly reliable silicon-on-insulator complementary metal-oxide-silicon fin field-effect transistors

    NASA Astrophysics Data System (ADS)

    Mizubayashi, Wataru; Onoda, Hiroshi; Nakashima, Yoshiki; Ishikawa, Yuki; Matsukawa, Takashi; Endo, Kazuhiko; Liu, Yongxun; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Migita, Shinji; Morita, Yukinori; Ota, Hiroyuki; Masahara, Meishoku

    2015-04-01

    We have investigated the impact of heated ion implantation (I/I) on the performance and reliability of silicon-on-insulator (SOI) complementary metal-oxide-silicon (CMOS) fin field-effect transistors (FinFETs). An implantation temperature equal to and higher than 400 °C is needed to maintain the crystallinity of the Si substrate during I/I within the experimental conditions of ion species, implantation energy, and ion dose in this study. By heated I/I at 500 °C, the 11-nm-thick SOI layer perfectly maintains the crystallinity even after I/I, and a defect-free crystal is obtained by activation annealing. It was clarified that the cap layer is essential for the suppression of the out-diffusion during heated I/I. Heated I/I on the source and drain improves the on-current-off-current (Ion-Ioff), threshold voltage (Vth) variability, and bias temperature instability (BTI) characteristics of nMOS and pMOS FinFETs as compared with those after room-temperature I/I.

  18. High performance liquid level monitoring system based on polymer fiber Bragg gratings embedded in silicone rubber diaphragms

    NASA Astrophysics Data System (ADS)

    Marques, Carlos A. F.; Peng, Gang-Ding; Webb, David J.

    2015-05-01

    Liquid-level sensing technologies have attracted great prominence, because such measurements are essential to industrial applications, such as fuel storage, flood warning and in the biochemical industry. Traditional liquid level sensors are based on electromechanical techniques; however they suffer from intrinsic safety concerns in explosive environments. In recent years, given that optical fiber sensors have lots of well-established advantages such as high accuracy, costeffectiveness, compact size, and ease of multiplexing, several optical fiber liquid level sensors have been investigated which are based on different operating principles such as side-polishing the cladding and a portion of core, using a spiral side-emitting optical fiber or using silica fiber gratings. The present work proposes a novel and highly sensitive liquid level sensor making use of polymer optical fiber Bragg gratings (POFBGs). The key elements of the system are a set of POFBGs embedded in silicone rubber diaphragms. This is a new development building on the idea of determining liquid level by measuring the pressure at the bottom of a liquid container, however it has a number of critical advantages. The system features several FBG-based pressure sensors as described above placed at different depths. Any sensor above the surface of the liquid will read the same ambient pressure. Sensors below the surface of the liquid will read pressures that increase linearly with depth. The position of the liquid surface can therefore be approximately identified as lying between the first sensor to read an above-ambient pressure and the next higher sensor. This level of precision would not in general be sufficient for most liquid level monitoring applications; however a much more precise determination of liquid level can be made by linear regression to the pressure readings from the sub-surface sensors. There are numerous advantages to this multi-sensor approach. First, the use of linear regression using

  19. Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

    NASA Astrophysics Data System (ADS)

    Park, Jae Hyo; Jang, Gil Su; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Joo, Seung Ki

    2016-04-01

    Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at -0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm2/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature.

  20. Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

    PubMed Central

    Park, Jae Hyo; Jang, Gil Su; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Joo, Seung Ki

    2016-01-01

    Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at −0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm2/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature. PMID:27098115

  1. Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor.

    PubMed

    Park, Jae Hyo; Jang, Gil Su; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Joo, Seung Ki

    2016-04-21

    Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at -0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm(2)/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature.

  2. Controllability of self-aligned four-terminal planar embedded metal double-gate low-temperature polycrystalline-silicon thin-film transistors on a glass substrate

    NASA Astrophysics Data System (ADS)

    Ohsawa, Hiroki; Sasaki, Shun; Hara, Akito

    2016-03-01

    Self-aligned four-terminal n-channel (n-ch) and p-channel (p-ch) planar embedded metal double-gate polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a glass substrate at a low temperature of 550 °C. This device includes a metal top gate (TG) and a metal bottom gate (BG), which are used as the drive and control gates or vice versa. The BG was embedded in a glass substrate, and a poly-Si channel with large lateral grains was fabricated by continuous-wave laser lateral crystallization. The threshold voltage modulation factors under various control gate voltages (γ = ΔVth/ΔVCG) were nearly equal to the theoretical predictions in both the n- and p-ch TFTs. By exploiting this high controllability, an enhancement depletion (ED) inverter was fabricated, and successful operation at 2.0 V was confirmed.

  3. Low loss (approximately 6.45dB/cm) sub-micron polycrystalline silicon waveguide integrated with efficient SiON waveguide coupler.

    PubMed

    Fang, Q; Song, J F; Tao, S H; Yu, M B; Lo, G Q; Kwong, D L

    2008-04-28

    In this communication, the sub-micron size polycrystalline silicon (poly- Si) single mode waveguides are fabricated and integrated with SiON waveguide coupler by deep UV lithography. The propagation loss of poly-Si waveguide and coupling loss with optical flat polarization-maintaining fiber (PMF) are measured. For whole C-band (i.e., lambda approximately 1520-1565nm), the propagation loss of TE mode is measured to approximately 6.45+/-0.3dB/cm. The coupling loss with optical flat PMF is approximately 3.4dB/facet for TE mode. To the best of our knowledge, the propagation loss is among the best reported results. This communication discusses the factors reducing the propagation loss, especially the effect of the refractive index contrast. Compared to the SiO(2) cladding, poly-Si waveguide with SiON cladding exhibits lower propagation loss.

  4. Charge retention characteristics of silicide-induced crystallized polycrystalline silicon floating gate thin-film transistors for active matrix organic light-emitting diode.

    PubMed

    Park, Jae Hyo; Son, Se Wan; Byun, Chang Woo; Kim, Hyung Yoon; Joo, So Na; Lee, Yong Woo; Yun, Seung Jae; Joo, Seung Ki

    2013-10-01

    In this work, non-volatile memory thin-film transistor (NVM-TFT) was fabricated by nickel silicide-induced laterally crystallized (SILC) polycrystalline silicon (poly-Si) as the active layer. The nickel seed silicide-induced crystallized (SIC) poly-Si was used as storage layer which is embedded in the gate insulator. The novel unit pixel of active matrix organic light-emitting diode (AMOLED) using NVM-TFT is proposed and investigated the electrical and optical performance. The threshold voltage shift showed 17.2 V and the high reliability of retention characteristic was demonstrated until 10 years. The retention time can modulate the recharge refresh time of the unit pixel of AMOLED up to 5000 sec.

  5. Low-cost conversion of polycrystalline silicon into sheet by HEM and FAST. [Heat Exchanger Method and Fixed Abrasive Slicing Technique

    NASA Technical Reports Server (NTRS)

    Khattak, C. P.; Schmid, F.

    1980-01-01

    The conversion of polycrystalline silicon to sheet form (the wafers produced are 10 cm x 10 cm cross section with minimum surface damage) by the Heat Exchanger Method (HEM) and multi-wire Fixed Abrasive Slicing Technique (FAST), as a means of reducing the cost of solar arrays for adaptation of photovoltaic technology for terrestrial applications, is given. A schematic of a HEM furnace, which includes a silica crucible, and developments in the HEM process are presented. A new machine for slicing with wire was designed and fabricated. The high-speed slicer has been used to slice 19 wafers per cm from 10 cm diameter crystals. Both HEM and FAST are low-cost processes and they have the potential of giving one of the lowest add-on costs ($6.24 and $6.48 per square meter of sheet respectively, with the combination add-on cost of $14.87 per square meter) of this conversion.

  6. Exploration of maximum count rate capabilities for large-area photon counting arrays based on polycrystalline silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua

    2016-03-01

    Pixelated photon counting detectors with energy discrimination capabilities are of increasing clinical interest for x-ray imaging. Such detectors, presently in clinical use for mammography and under development for breast tomosynthesis and spectral CT, usually employ in-pixel circuits based on crystalline silicon - a semiconductor material that is generally not well-suited for economic manufacture of large-area devices. One interesting alternative semiconductor is polycrystalline silicon (poly-Si), a thin-film technology capable of creating very large-area, monolithic devices. Similar to crystalline silicon, poly-Si allows implementation of the type of fast, complex, in-pixel circuitry required for photon counting - operating at processing speeds that are not possible with amorphous silicon (the material currently used for large-area, active matrix, flat-panel imagers). The pixel circuits of two-dimensional photon counting arrays are generally comprised of four stages: amplifier, comparator, clock generator and counter. The analog front-end (in particular, the amplifier) strongly influences performance and is therefore of interest to study. In this paper, the relationship between incident and output count rate of the analog front-end is explored under diagnostic imaging conditions for a promising poly-Si based design. The input to the amplifier is modeled in the time domain assuming a realistic input x-ray spectrum. Simulations of circuits based on poly-Si thin-film transistors are used to determine the resulting output count rate as a function of input count rate, energy discrimination threshold and operating conditions.

  7. Characterization of nanometer-thick polycrystalline silicon with phonon-boundary scattering enhanced thermoelectric properties and its application in infrared sensors.

    PubMed

    Zhou, Huchuan; Kropelnicki, Piotr; Lee, Chengkuo

    2015-01-14

    Although significantly reducing the thermal conductivity of silicon nanowires has been reported, it remains a challenge to integrate silicon nanowires with structure materials and electrodes in the complementary metal-oxide-semiconductor (CMOS) process. In this paper, we investigated the thermal conductivity of nanometer-thick polycrystalline silicon (poly-Si) theoretically and experimentally. By leveraging the phonon-boundary scattering, the thermal conductivity of 52 nm thick poly-Si was measured as low as around 12 W mK(-1) which is only about 10% of the value of bulk single crystalline silicon. The ZT of n-doped and p-doped 52 nm thick poly-Si was measured as 0.067 and 0.024, respectively, while most previously reported data had values of about 0.02 and 0.01 for a poly-Si layer with a thickness of 0.5 μm and above. Thermopile infrared sensors comprising 128 pairs of thermocouples made of either n-doped or p-doped nanometer-thick poly-Si strips in a series connected by an aluminium (Al) metal interconnect layer are fabricated using microelectromechanical system (MEMS) technology. The measured vacuum specific detectivity (D*) of the n-doped and p-doped thermopile infrared (IR) sensors are 3.00 × 10(8) and 1.83 × 10(8) cm Hz(1/2) W(-1) for sensors of 52 nm thick poly-Si, and 5.75 × 10(7) and 3.95 × 10(7) cm Hz(1/2) W(-1) for sensors of 300 nm thick poly-Si, respectively. The outstanding thermoelectric properties indicate our approach is promising for diverse applications using ultrathin poly-Si technology.

  8. Removal of the process-induced fluorine associated to chemical vapor deposition of tungsten onto a polycrystalline silicon gate structure by heat treatment in a hydrogen-containing atmosphere

    NASA Astrophysics Data System (ADS)

    Eriksson, Th.; Carlsson, J.-O.; Mohadjeri, B.; Östling, M.; d'Heurle, F. M.; Petersson, C. S.; Keinonen, J.

    1990-09-01

    Tungsten was deposited from a gas mixture of hydrogen and tungsten hexafluoride onto a polycrystalline silicon gate structure in a chemical vapor deposition system. During the deposition process fluorine was also deposited as an undesired impurity. In order to remove the fluorine, heat treatments in the temperature range 550-1050 °C were performed in a hydrogen atmosphere. By this treatment it is possible to form volatile hydrofluoric acid and hence remove fluorine from the structure. Nuclear-resonance-broadening technique and secondary ion mass spectrometry were used for the analysis of fluorine. Fluorine was detected in all the samples except for the sample heat treated at 1050 °C. Moreover, etching of the polycrystalline silicon was observed. The gettering of fluorine, the etching of silicon and the observed formation of tungsten disilicide at 650 °C are discussed with respect to conceivable mechanisms. A thermodynamic study supporting the interpretations is also included.

  9. Predoping effects of boron and phosphorous on arsenic diffusion along grain boundaries in polycrystalline silicon investigated by atom probe tomography

    NASA Astrophysics Data System (ADS)

    Takamizawa, Hisashi; Shimizu, Yasuo; Inoue, Koji; Nozawa, Yasuko; Toyama, Takeshi; Yano, Fumiko; Inoue, Masao; Nishida, Akio; Nagai, Yasuyoshi

    2016-10-01

    The effect of P or B predoping on As diffusion in polycrystalline Si was investigated by atom probe tomography. In all samples, a high concentration of As was found at grain boundaries, indicating that such boundaries are the main diffusion path. However, As grain-boundary diffusion was suppressed in the B-doped sample and enhanced in the P-doped sample. In a sample codoped with both P and B, As diffusion was somewhat enhanced, indicating competition between the effects of the two dopants. The results suggest that As grain-boundary diffusion can be controlled by varying the local concentration of P or B.

  10. Fundamental studies of grain boundary passivation in polycrystalline silicon with application to improved photovoltaic devices. A final research report covering work completed from February-December 1979

    SciTech Connect

    Seager, C.H.; Ginley, D.S.

    1980-02-01

    Several aspects of the electrical properties of silicon grain boundaries have been studied. The temperature dependence of the zero-bias conductance and capacitance of single boundaries has been measured and shown to be in good agreement with a simple double depletion layer/thermal emission (DDL/TE) model developed to predict the transport properties of such structures. In addition, it has been shown that deconvolution of the I-V properties of some boundaries via a deconvolution scheme suggested by Pike and Seager yields effective one-electron densities of trapping states which are in good agreement with estimates obtained by low temperature electron emission measurements. Experiments have also been performed which indicate that diffusion of atomic hydrogen into silicon grain boundaries greatly reduces this density of trapping states. In properly prepared, large grained polycrystalline samples all measurable traces of grain boundary potential barriers can be removed to substantial penetration depths after several hours exposure to a hydrogen plasma at elevated temperatures. Initial experiments on prototype polysilicon solar cells have shown that this passivation process can improve AM1 efficiencies. In order to more fully understand and develop this process for improving practical multigrained cells, several device research efforts with other DOE/SERI funded contractors have been initiated.

  11. Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

    DOEpatents

    Findikoglu, Alp T.; Jia, Quanxi; Arendt, Paul N.; Matias, Vladimir; Choi, Woong

    2009-10-27

    A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

  12. A high performance micro-pressure sensor based on a double-ended quartz tuning fork and silicon diaphragm in atmospheric packaging

    NASA Astrophysics Data System (ADS)

    Cheng, Rongjun; Li, Cun; Zhao, Yulong; Li, Bo; Tian, Bian

    2015-06-01

    A resonant micro-pressure sensor based on a double-ended quartz tuning fork (DEQTF) and bossed silicon diaphragm in atmospheric packaging is presented. To achieve vacuum-free packaging with a high quality factor, the DEQTF is designed to resonate in an anti-phase vibration mode in a plane that is under the effect of slide-film damping. The feasibility is demonstrated by theoretical analysis and a finite element simulation. The dimensions of the DEQTF and diaphragm are optimized in accordance with the principles of improving sensitivity and minimizing energy dissipation. The sensor chip is fabricated using quartz and silicon micromachining technologies, and simply packaged in a stainless steel shell with standard atmosphere. The experimental setup is established for the calibration, where an additional sensor prototype without a pressure port is introduced as a frequency reference. By detecting the frequency difference of the tested sensor and reference sensor, the influences of environmental factors such as temperature and shocks on measuring accuracy are eliminated effectively. Under the action of a self-excitation circuit, static performance is obtained. The sensitivity of the sensor is 299 kHz kPa-1 in the operating range of 0-10 kPa at room temperature. Testing results shows a nonlinearity of 0.0278%FS, a hysteresis of 0.0207%FS and a repeatability of 0.0375%FS. The results indicate that the proposed sensor has favorable features, which provides a cost-effective and high-performance approach for low pressure measurement.

  13. Photovoltaic mechanisms in polycrystalline thin film silicon solar cells. Quarterly technical progress report No. 1, July 30-October 31, 1980

    SciTech Connect

    Sopori, B.

    1980-07-30

    Major accomplishments during the first quarter of the contract period are reported. Small area diode fabrication and analysis has been continued. This technique has further been applied to many RTR ribbons. An optical technique for determination of crystallite orientations has been placed in operation. This technique has many distinct advantages. These are: (1) rapid; (2) can be set-up very inexpensively; (3) well suited for polycrystalline substrates of small grain size; and (4) can easily characterize twins. Accuracies obtained with this technique are about the same as that of the Laue technique. A technique to qualitatively evaluate grain boundary activity in unprocessed substrates has been used and valuable results obtained. Further analysis is being done to use this technique for quantitative evaluation. A major study of G.B. orientation effects is underway. Initial results on RTR ribbons have shown a good correlation of G.B. barrier height with misorientation (tilt boundaries).

  14. Ultralow-loss polycrystalline silicon waveguides and high uniformity 1x12 MMI fanout for 3D photonic integration.

    PubMed

    Kwong, David; Covey, John; Hosseini, Amir; Zhang, Yang; Xu, Xiaochuan; Chen, Ray T

    2012-09-10

    We have investigated the feasibility of multimode polysilicon waveguides to demonstrate the suitability of polysilicon as a candidate for multilayer photonic applications. Solid Phase Crystallization (SPC) with a maximum temperature of 1000°C is used to create polysilicon on thermally grown SiO2. We then measure the propagation losses for various waveguide widths on both polysilicon and crystalline silicon platforms. We find that as the width increases for polysilicon waveguides, the propagation loss decreases similar to crystalline silicon waveguides. At a waveguide width of 10 µm, polysilicon and crystalline silicon waveguides have propagation losses of 0.56 dB/cm and 0.31 dB/cm, respectively, indicating there is little bulk absorption from the polysilicon and is the lowest propagation loss for polysilicon demonstrated to date. In addition, the first 1x12 polysilicon MMI is demonstrated with a low insertion loss of -1.29dB and a high uniformity of 1.07 dB. These results vindicate the use of polysilicon waveguides of varying widths in photonic integrated circuits.

  15. Chemical speciation at buried interfaces in high-temperature processed polycrystalline silicon thin-film solar cells on ZnO:Al

    NASA Astrophysics Data System (ADS)

    Becker, Christiane; Pagels, Marcel; Zachäus, Carolin; Pollakowski, Beatrix; Beckhoff, Burkhard; Kanngießer, Birgit; Rech, Bernd

    2013-01-01

    The combination of polycrystalline silicon (poly-Si) thin films with aluminum doped zinc oxide layers (ZnO:Al) as transparent conductive oxide enables the design of appealing optoelectronic devices at low costs, namely in the field of photovoltaics. The fabrication of both thin-film materials requires high-temperature treatments, which are highly desired for obtaining a high electrical material quality. Annealing procedures are typically applied during crystallization and defect-healing processes for silicon and can boost the carrier mobility and conductivity of ZnO:Al layers. In a combined poly-Si/ZnO:Al layer system, an in-depth knowledge of the interaction of both layers and the control of interface reactions upon thermal treatments is crucial. Therefore, we analyze the influence of rapid thermal treatments up to 1050 °C on solid phase crystallized poly-Si thin-film solar cells on ZnO:Al-coated glass, focusing on chemical interface reactions and modifications of the poly-Si absorber material quality. The presence of a ZnO:Al layer in the solar cell stack was found to limit the poly-Si solar cell performance with open circuit voltages only below 390 mV (compared to 435 mV without ZnO film), even if a silicon nitride (SiN) diffusion barrier was included. A considerable amount of diffused zinc inside the silicon was observed. By grazing-incidence X-ray fluorescence spectrometry, a depth-resolving analysis of the elemental composition close to the poly-Si/(SiN)/ZnO:Al interface was carried out. Temperatures above 1000 °C were found to promote the formation of new chemical compounds within about 10 nm of interface, such as zinc silicates (Zn2SiO4) and aluminium oxide (AlxOy). These results give valuable insights about the temperature-limitations of Si/ZnO thin-film solar cell fabrication and the formation of high-mobility ZnO-layers by thermal anneal.

  16. Improvement of polycrystalline silicon wafer solar cell efficiency by forming nanoscale pyramids on wafer surface using a self-mask etching technique.

    PubMed

    Lin, Hsin-Han; Chen, Wen-Hwa; Hong, Franklin C-N

    2013-05-01

    The creation of nanostructures on polycrystalline silicon wafer surface to reduce the solar reflection can enhance the solar absorption and thus increase the solar-electricity conversion efficiency of solar cells. The self-masking reactive ion etching (RIE) was studied to directly fabricate nanostructures on silicon surface without using a masking process for antireflection purpose. Reactive gases comprising chlorine (Cl2), sulfur hexafluoride (SF6), and oxygen (O2) were activated by radio-frequency plasma in an RIE system at a typical pressure of 120-130 mTorr to fabricate the nanoscale pyramids. Poly-Si wafers were etched directly without masking for 6-10 min to create surface nanostructures by varying the compositions of SF6, Cl2, and O2 gas mixtures in the etching process. The wafers were then treated with acid (KOH:H2O = 1:1) for 1 min to remove the damage layer (100 nm) induced by dry etching. The damage layer significantly reduced the solar cell efficiencies by affecting the electrical properties of the surface layer. The light reflectivity from the surface after acid treatment could be significantly reduced to <10% for the wavelengths between 500 and 900 nm. The effects of RIE and surface treatment conditions on the surface nanostructures and the optical performance as well as the efficiencies of solar cells will be presented and discussed. The authors have successfully fabricated large-area (156 × 156 mm(2)) subwavelength antireflection structure on poly-Si substrates, which could improve the solar cell efficiency reproducibly up to 16.27%, higher than 15.56% using wet etching.

  17. Improvement of polycrystalline silicon wafer solar cell efficiency by forming nanoscale pyramids on wafer surface using a self-mask etching technique

    PubMed Central

    Lin, Hsin-Han; Chen, Wen-Hwa; Hong, Franklin C.-N.

    2013-01-01

    The creation of nanostructures on polycrystalline silicon wafer surface to reduce the solar reflection can enhance the solar absorption and thus increase the solar-electricity conversion efficiency of solar cells. The self-masking reactive ion etching (RIE) was studied to directly fabricate nanostructures on silicon surface without using a masking process for antireflection purpose. Reactive gases comprising chlorine (Cl2), sulfur hexafluoride (SF6), and oxygen (O2) were activated by radio-frequency plasma in an RIE system at a typical pressure of 120–130 mTorr to fabricate the nanoscale pyramids. Poly-Si wafers were etched directly without masking for 6–10 min to create surface nanostructures by varying the compositions of SF6, Cl2, and O2 gas mixtures in the etching process. The wafers were then treated with acid (KOH:H2O = 1:1) for 1 min to remove the damage layer (100 nm) induced by dry etching. The damage layer significantly reduced the solar cell efficiencies by affecting the electrical properties of the surface layer. The light reflectivity from the surface after acid treatment could be significantly reduced to <10% for the wavelengths between 500 and 900 nm. The effects of RIE and surface treatment conditions on the surface nanostructures and the optical performance as well as the efficiencies of solar cells will be presented and discussed. The authors have successfully fabricated large-area (156 × 156 mm2) subwavelength antireflection structure on poly-Si substrates, which could improve the solar cell efficiency reproducibly up to 16.27%, higher than 15.56% using wet etching. PMID:23847751

  18. Effects of gate insulator using high pressure annealing on the characteristics of solid phase crystallized polycrystalline silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Moojin; Jin, GuangHai

    2009-04-01

    The oxidizing ambient was built using high pressure H2O vapor at 550 °C. For the solid phase crystallization (SPC) polycrystalline silicon (poly-Si) that is annealed for 1 h at 2 MPa, the oxide thickness is about 150 Å. The oxide layer is approximately 90 Å above the original surface of the poly-Si and 60 Å below the original surface. The oxide layer is used as the first gate insulator layer of thin-film transistors (TFTs). The heating at 550 °C with 2 MPa H2O vapor increased the carrier mobility from 17.6 cm2/V s of the conventional SPC process to 30.4 cm2/V s, and it reduced the absolute value of the threshold voltage (Vth) from 4.13 to 3.62 V. The subthreshold swing also decreased from 0.72 to 0.60 V/decade. This improvement is attributed mainly to the reduction in defect density at the oxide/poly-Si interface and in the poly-Si film by the high pressure annealing (HPA) process. Since the realization of excellent performance at the oxide/poly-Si interface and in poly-Si depends on the defect density, the poly-Si having the thermal oxide formed by a combined process of SPC and HPA may be well suited for fabrication of poly-Si TFTs for flat panel displays such as active matrix organic light emitting diodes.

  19. Surface Engineering of Polycrystalline Silicon for Long-term Mechanical Stress Endurance Enhancement in Flexible Low Temperature Poly-Si Thin-Film Transistors.

    PubMed

    Chen, Bo-Wei; Chang, Ting-Chang; Hung, Yu-Ju; Huang, Shin-Ping; Chen, Hua-Mao; Liao, Po-Yung; Lin, Yu-Ho; Huang, Hui-Chun; Chiang, Hsiao-Cheng; Yang, Chung-I; Zheng, Yu-Zhe; Chu, Ann-Kuo; Li, Hung-Wei; Tsai, Chih-Hung; Lu, Hsueh-Hsing; Wang, Terry Tai-Jui; Chang, Tsu-Chiang

    2017-02-08

    Surface morphology in polycrystalline silicon (poly-Si) film is an issue regardless of whether conventional excimer laser annealing (ELA) or the newer metal-induced lateral crystallization (MILC) process is used. This paper investigates the stress distribution while undergoing long-term mechanical stress and the influence of stress on electrical characteristics. Our simulated results show that the non-uniform stress in the gate insulator is more pronounced near the polysilicon/gate insulator edge and at the two sides of the polysilicon protrusion. This stress results in defects in the gate insulator and leads to a non-uniform degradation phenomenon, which affects both the performance and reliability in thin-film transistors (TFTs). The degree of degradation is similar regardless of bending axis (channel-length axis, channel-width axis) or bending type (compression, tension), which means that the degradation is dominated by the protrusion effects. Furthermore, by utilizing long-term electrical bias stresses after undergoing long-tern bending stress, it is apparent that the carrier injection is severe in the sub-channel region, which confirms that the influence of protrusions is crucial. To eliminate the influence of surface morphology in poly-Si, three kinds of laser energy density were used during crystallization to control the protrusion height. The device with lowest protrusions demonstrates the smallest degradation after undergoing long-term bending.

  20. Abnormal Threshold Voltage Shifts in P-Channel Low-Temperature Polycrystalline Silicon Thin Film Transistors Under Negative Bias Temperature Stress.

    PubMed

    Kim, Sang Sub; Choi, Pyung Ho; Baek, Do Hyun; Lee, Jae Hyeong; Choi, Byoung Deog

    2015-10-01

    In this research, we have investigated the instability of P-channel low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS TFTs) with double-layer SiO2/SiNx dielectrics. A negative gate bias temperature instability (NBTI) stress was applied and a turn-around behavior phenomenon was observed in the Threshold Voltage Shift (Vth). A positive threshold voltage shift occurs in the first stage, resulting from the negative charge trapping at the SiNx/SiO2 dielectric interface being dominant over the positive charge trapping at dielectric/Poly-Si interface. Following a stress time of 7000 s, the Vth switches to the negative voltage direction, which is "turn-around" behavior. In the second stage, the Vth moves from -1.63 V to -2 V, overwhelming the NBTI effect that results in the trapping of positive charges at the dielectric/Poly-Si interface states and generating grain-boundary trap states and oxide traps.

  1. Real-time and label-free detection of the prostate-specific antigen in human serum by a polycrystalline silicon nanowire field-effect transistor biosensor.

    PubMed

    Huang, Yu-Wen; Wu, Chung-Shu; Chuang, Cheng-Keng; Pang, See-Tong; Pan, Tung-Ming; Yang, Yuh-Shyong; Ko, Fu-Hsiang

    2013-08-20

    In this research, we used a polycrystalline silicon nanowire field-effect transistor (poly-Si NWFET) as a biosensor that employs the sidewall spacer technique instead of an expensive electron beam lithography method. When compared with commercial semiconductor processes, the sidewall spacer technique has the advantages of simplicity and low cost. In this study, we employed a novel poly-Si NWFET device for real-time, label-free, and ultrahigh-sensitivity detection of prostate-specific antigen (PSA) in human serum. Since serum proteome is very complex containing high levels of salts and other interfering compounds, we hereby developed a standard operating procedure for real-sample pretreatment to keep a proper pH value and ionic strength of the desalted serum and also utilized Tween 20 to serve as the passivation agent by surface modification on the NWFET to reduce nonspecific binding for medical diagnostic applications. We first modified 3-aminopropyltriethoxysilane on the surface of a poly-Si nanowire device followed by glutaraldehyde functionalization, and the PSA antibodies were immobilized on the aldehyde terminal. While PSA was prepared in the buffers to maintain an appropriate pH value and ionic strength, the results indicated that the sensor could detect trace PSA at less than 5 fg/mL in a microfluidic channel. The novel poly-Si NWFET is developed as a diagnostic platform for monitoring prostate cancer and predicting the risk of early biochemical relapse.

  2. A sensitive and selective magnetic graphene composite-modified polycrystalline-silicon nanowire field-effect transistor for bladder cancer diagnosis.

    PubMed

    Chen, Hsiao-Chien; Chen, Yi-Ting; Tsai, Rung-Ywan; Chen, Min-Cheng; Chen, Shi-Liang; Xiao, Min-Cong; Chen, Chien-Lun; Hua, Mu-Yi

    2015-04-15

    In this study, we describe the urinary quantification of apolipoprotein A II protein (APOA2 protein), a biomarker for the diagnosis of bladder cancer, using an n-type polycrystalline silicon nanowire field-effect transistor (poly-SiNW-FET). The modification of poly-SiNW-FET by magnetic graphene with long-chain acid groups (MGLA) synthesized via Friedel-Crafts acylation was compared with that obtained using short-chain acid groups (MGSA). Compared with MGSA, the MGLA showed a higher immobilization degree and bioactivity to the anti-APOA2 antibody (Ab) due to its lower steric hindrance. In addition, the magnetic properties enabled rapid separation and purification during Ab immobilization, ultimately preserving its bioactivity. The Ab-MGLA/poly-SiNW-FET exhibited a linear dependence of relative response to the logarithmical concentration in a range between 19.5pgmL(-1) and 1.95µgmL(-1), with a limit of detection (LOD) of 6.7pgmL(-1). An additional washing step before measurement aimed at excluding the interfering biocomponents ensured the reliability of the assay. We conclude that our biosensor efficiently distinguishes mean values of urinary APOA2 protein concentrations between patients with bladder cancer (29-344ngmL(-1)) and those with hernia (0.425-9.47ngmL(-1)).

  3. Transformational silicon electronics.

    PubMed

    Rojas, Jhonathan Prieto; Torres Sevilla, Galo Andres; Ghoneim, Mohamed Tarek; Inayat, Salman Bin; Ahmed, Sally M; Hussain, Aftab Mustansir; Hussain, Muhammad Mustafa

    2014-02-25

    In today's traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry's most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications.

  4. Nanopattern-guided growth of single-crystal silicon on amorphous substrates and high-performance sub-100 nm thin-film transistors for three-dimensional integrated circuits

    NASA Astrophysics Data System (ADS)

    Gu, Jian

    /off current ratio, device-to-device uniformity etc. Two-dimensional device simulations show that PaTH TFTs are comparable to silicon-on-insulator (SOI) devices, making it a promising candidate for the fabrication of future high performance, low-power 3D integrated circuits. Finally, an ultrafast nanolithography technique, laser-assisted direct imprint (LADI) is introduced. LADI shows the ability of patterning nanostructures directly in silicon in nanoseconds with sub-10 nm resolution. The process has potential applications in multiple disciplines, and could be extended to other materials and processes.

  5. Buried oxide layer in silicon

    DOEpatents

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  6. Nanoscale deformation and fracture mechanics of polycrystalline silicon and diamond-like carbon for MEMS by the AFM/DIC method

    NASA Astrophysics Data System (ADS)

    Cho, Sung Woo

    A method for nanoscale experimental mechanics was developed to address problems in deformation and fracture of micron-scale components in Microelectromechanical Systems (MEMS). Specifically, the effective and local, elastic and fracture behavior of polycrystalline silicon (polysilicon) and tetrahedral amorphous diamond-like carbon (ta-C) were studied using freestanding thin films subject to uniaxial tension. In this method, direct measurements of local deformations were derived from Atomic Force Microscopy (AFM) images in specimen areas varying between 1x2 mum2 and 15x15 mum2 using Digital Image Correlation (DIC) to extract displacements and strains with spatial resolution of 1-2 nm. The effective elastic modulus and Poisson's ratio of polysilicon and ta-C from the Sandia National Laboratories (SUMMiT) were 155 +/- 6 GPa and 0.22 +/- 0.02, and 759 +/- 22 GPa and 0.17 +/- 0.03, respectively. Similarly, the elastic modulus and Poisson's ratio of polysilicon fabricated at MCNC via the Multi-User MEMS Processes (MUMPs) with <110> texture were 164 +/- 7 GPa and 0.22 +/- 0.02, respectively. A second problem studied using the AFM/DIC method was the fracture of polysilicon in the presence of atomically sharp cracks. The effective (macroscopic) Mode-I critical stress intensity factor for polysilicon from different MUMPs runs was 1.00 +/- 0.1 MPa√m, where 0.1 MPa√m was the standard deviation, attributed to local cleavage anisotropy and grain boundary toughening. The variation in the effective critical stress intensity factor and the subcritical crack growth of polysilicon that was spatially recorded and quantified for the first time were the result of the spatial variation of the 4 local stress intensity factor at the crack tip that controlled crack initiation and thus, the overall fracture process. The AFM/DIC method was also applied to determine the minimum size of a polysilicon domain whose effective mechanical behavior could be described by the isotropic elastic

  7. polycrystalline ceramics

    NASA Astrophysics Data System (ADS)

    Cai, Yunqi; Ma, Ji; Cui, Qi; Wang, Wenzhang; Zhang, Hui; Chen, Qingming

    2014-12-01

    La2/3Ca1/3MnO3 polycrystalline ceramics were synthesized by sol-gel method. Sharp temperature coefficient of resistance (TCR) variation (with peak value up to 22 %) has been observed near the metal-insulator transition temperature T MI (273 K) for the sample sintered at 1,450 °C. This TCR value is much higher than the previously reported values for the undoped and Ag-doped La0.67Ca0.33MnO3 samples and is comparable to the optimized thin films. It was concluded that the improved physical properties of the La0.67Ca0.33MnO3 material are due to its improved microstructure and homogeneity.

  8. Hierarchical silicon nanowires-carbon textiles matrix as a binder-free anode for high-performance advanced lithium-ion batteries

    PubMed Central

    Liu, Bin; Wang, Xianfu; Chen, Haitian; Wang, Zhuoran; Chen, Di; Cheng, Yi-Bing; Zhou, Chongwu; Shen, Guozhen

    2013-01-01

    Toward the increasing demands of portable energy storage and electric vehicle applications, the widely used graphite anodes with significant drawbacks become more and more unsuitable. Herein, we report a novel scaffold of hierarchical silicon nanowires-carbon textiles anodes fabricated via a facile method. Further, complete lithium-ion batteries based on Si and commercial LiCoO2 materials were assembled to investigate their corresponding across-the-aboard performances, demonstrating their enhanced specific capacity (2950 mAh g−1 at 0.2 C), good repeatability/rate capability (even >900 mAh g−1 at high rate of 5 C), long cycling life, and excellent stability in various external conditions (curvature, temperature, and humidity). Above results light the way to principally replacing graphite anodes with silicon-based electrodes which was confirmed to have better comprehensive performances. PMID:23572030

  9. Solvothermal synthesis of a silicon hierarchical structure composed of 20 nm Si nanoparticles coated with carbon for high performance Li-ion battery anodes.

    PubMed

    Zhou, Jianbin; Jiang, Zhuoheng; Cai, Wenlong; Liu, Xianyu; Zhu, Yongchun; Lan, Yang; Ma, Kai; Qian, Yitai

    2016-09-21

    A silicon hierarchical structure composed of 20 nm Si nanoparticles (Si-20) is synthesized using a solvothermal method. After coating with a carbon layer by pyrolysis of acetylene gas, the fabricated Si-20@C composites exhibit a superior cycling performance with 915.8 mA h g(-1) at 3.6 A g(-1) over 500 cycles and a high rate performance with 746.2 mA h g(-1) at 10.8 A g(-1).

  10. Top-Coating Silicon Onto Ceramic

    NASA Technical Reports Server (NTRS)

    Heaps, J. D.; Nelson, L. D.; Zook, J. D.

    1985-01-01

    Polycrystalline silicon for solar cells produced at low cost. Molten silicon poured from quartz trough onto moving carbon-coated ceramic substrate. Doctor blade spreads liquid silicon evenly over substrate. Molten material solidifies to form sheet of polycrystalline silicon having photovoltaic conversion efficiency greater than 10 percent. Method produces 100-um-thick silicon coatings at speed 0.15 centimeter per second.

  11. High-performance characteristics of silicon inverse opal synthesized by the simple magnesium reduction as anodes for lithium-ion batteries

    NASA Astrophysics Data System (ADS)

    Jeong, Jae-Hun; Kim, Kwang-Hyun; Jung, Dong-Won; Kim, Ketack; Lee, Sung-Man; Oh, Eun-Suok

    2015-12-01

    Inverse silicon opal (ISi) and carbon-coated inverse Si opal (C-ISi) structures are prepared from the simple thermal reduction method using magnesium and investigated as the anode materials in lithium-ion batteries. The ISi and C-ISi samples comprise continuously arranged inverse opal structures, constructed by Si nanoparticles. The macroporous structures in ∼1 μm range are favourable for lithium-ion transport and more importantly for absorbing volumetric change in the silicon nanoparticles. Moreover, the carbon coating on the inverse Si opal improves the electrical conductivity and acts as a mechanical buffer for the volume change. C-ISi sample shows a high capacity of 1550 mAh g-1 at the 100th cycle with very stable cycle retention, whereas the ISi and pristine Si samples show 1146.4 mAh g-1 and approximately zero, respectively, at the 100th cycle with rapid capacity fading. Surprisingly, the volumetric expansion of C-ISi electrode after 100th cycles is only 16.1%, which is as low as that for commercial graphite electrodes.

  12. Binding of carbon coated nano-silicon in graphene sheets by wet ball-milling and pyrolysis as high performance anodes for lithium-ion batteries

    NASA Astrophysics Data System (ADS)

    Sun, Wei; Hu, Renzong; Zhang, Miao; Liu, Jiangwen; Zhu, Min

    2016-06-01

    A novel approach has been developed to prepare silicon@carbon/graphene sheets (Si@C/G) composite with a unique structure, in which carbon coated Si nanoparticles are uniformly dispersed in a matrix of graphene sheets, to enhance the cycleability and electronic conductivity of Si-based anodes for Li-ion batteries. In this study, Si nanoparticles and expanded graphite (EG) are treated by combining high-energy wet ball-milling in sucrose solution with subsequent pyrolysis treatment to produce this Si@C/G composite. To achieve better overall electrochemical performance, the carbon content of the composites is also studied systematically. The as-designed Si30@C40/G30 (Si:C:G = 30:40:30, by weight) composite exhibits a high Li-storage capacity of 1259 mAh g-1 at a current density of 0.2 A g-1 in the first cycle. Further, a stable cycleability with 99.1/88.2% capacity retention from initial reversible charge capacity can be achieved over 100/300 cycles, showing great promise for batteries applications. This good electrochemical performance can be attributed to the uniform coating and binding effect of pyrolytic carbon as well as the network of graphene sheets, which increase the electronic conductivity and Li+ diffusion in the composite, and effectively accommodated the volume change of Si nanoparticles during the Li+ alloying and dealloying processes.

  13. Silicon Diphosphide: A Si-Based Three-Dimensional Crystalline Framework as a High-Performance Li-Ion Battery Anode.

    PubMed

    Kwon, Hyuk-Tae; Lee, Churl Kyoung; Jeon, Ki-Joon; Park, Cheol-Min

    2016-06-28

    The development of an electrode material for rechargeable Li-ion batteries (LIBs) and the understanding of its reaction mechanism play key roles in enhancing the electrochemical characteristics of LIBs for use in various portable electronics and electric vehicles. Here, we report a three-dimensional (3D) crystalline-framework-structured silicon diphosphide (SiP2) and its interesting electrochemical behaviors for superior LIBs. During Li insertion in the SiP2, a three-step electrochemical reaction mechanism, sequentially comprised of a topotactic transition (0.55-2 V), an amorphization (0.25-2 V), and a conversion (0-2 V), was thoroughly analyzed. On the basis of the three-step electrochemical reaction mechanism, excellent electrochemical properties, such as high initial capacities, high initial Coulombic efficiencies, stable cycle behaviors, and fast-rate capabilities, were attained from the preparation of a nanostructured SiP2/C composite. This 3D crystalline-framework-structured SiP2 compound will be a promising alternative anode material in the realization and mass production of excellent, rechargeable LIBs.

  14. Formation of silicon-on-insulator layer with midair cavity for meniscus force-mediated layer transfer and high-performance transistor fabrication on glass

    NASA Astrophysics Data System (ADS)

    Akazawa, Muneki; Sakaike, Kohei; Higashi, Seiichiro

    2015-08-01

    We attempted to transfer a phosphorus ion (P+)-implanted oxidized silicon-on-insulator (SOI) layer with a midair cavity to a glass substrate using meniscus force at a low temperature. The SiO2 column size was controlled by etching time and the minimum column size was 104 nm. The transfer yield of the implanted sample was significantly improved by decreasing the column size, and the maximum transfer yield was 95% when the implantation dose was 1 × 1015 cm-2. The causes of increasing transfer yield are considered to be the tapered SiO2 column shape and the hydrophilicity of the surface of oxidized samples with implantation. N-channel thin-film transistors (TFTs) fabricated using the films on glass at 300 °C showed a field-effect mobility of 505 cm2 V-1 s-1, a threshold voltage of 2.47 V and a subthreshold swing of 324 mV/dec. on average.

  15. Deep etching of single- and polycrystalline silicon with high speed, high aspect ratio, high uniformity, and 3D complexity by electric bias-attenuated metal-assisted chemical etching (EMaCE).

    PubMed

    Li, Liyi; Zhao, Xueying; Wong, Ching-Ping

    2014-10-08

    In this work, a novel wet silicon (Si) etching method, electric bias-attenuated metal-assisted chemical etching (EMaCE), is demonstrated to be readily available for three-dimensional (3D) electronic integration, microelectromechinal systems, and a broad range of 3D electronic components with low cost. On the basis of the traditional metal-assisted chemical etching process, an electric bias was applied to the Si substrate in EMaCE. The 3D geometry of the etching profile was effectively controlled by the bias in a real-time manner. The reported method successfully fabricated an array of over 10 000 vertical holes with diameters of 28 μm on 1 cm(2) silicon chips at a rate of up to 11 μm/min. The sidewall roughness was kept below 50 nm, and a high aspect ratio of over 10:1 was achieved. The 3D geometry could be attenuated by the variable applied bias in real time. Vertical deep etching was realized on (100)-, (111)-Si, and polycrystalline Si substrates. Complex features with lateral dimensions of 0.8-500 μm were also fabricated with submicron accuracy.

  16. Electronic transport in polycrystalline graphene.

    PubMed

    Yazyev, Oleg V; Louie, Steven G

    2010-10-01

    Most materials in available macroscopic quantities are polycrystalline. Graphene, a recently discovered two-dimensional form of carbon with strong potential for replacing silicon in future electronics, is no exception. There is growing evidence of the polycrystalline nature of graphene samples obtained using various techniques. Grain boundaries, intrinsic topological defects of polycrystalline materials, are expected to markedly alter the electronic transport in graphene. Here, we develop a theory of charge carrier transmission through grain boundaries composed of a periodic array of dislocations in graphene based on the momentum conservation principle. Depending on the grain-boundary structure we find two distinct transport behaviours--either high transparency, or perfect reflection of charge carriers over remarkably large energy ranges. First-principles quantum transport calculations are used to verify and further investigate this striking behaviour. Our study sheds light on the transport properties of large-area graphene samples. Furthermore, purposeful engineering of periodic grain boundaries with tunable transport gaps would allow for controlling charge currents without the need to introduce bulk bandgaps in otherwise semimetallic graphene. The proposed approach can be regarded as a means towards building practical graphene electronics.

  17. High Performance Arcjet Engines

    NASA Technical Reports Server (NTRS)

    Kennel, Elliot B.; Ivanov, Alexey Nikolayevich; Nikolayev, Yuri Vyacheslavovich

    1994-01-01

    This effort sought to exploit advanced single crystal tungsten-tantalum alloy material for fabrication of a high strength, high temperature arcjet anode. The use of this material is expected to result in improved strength, temperature resistance, and lifetime compared to state of the art polycrystalline alloys. In addition, the use of high electrical and thermal conductivity carbon-carbon composites was considered, and is believed to be a feasible approach. Highly conductive carbon-carbon composite anode capability represents enabling technology for rotating-arc designs derived from the Russian Scientific Research Institute of Thermal Processes (NIITP) because of high heat fluxes at the anode surface. However, for US designs the anode heat flux is much smaller, and thus the benefits are not as great as in the case of NIITP-derived designs. Still, it does appear that the tensile properties of carbon-carbon can be even better than those of single crystal tungsten alloys, especially when nearly-single-crystal fibers such as vapor grown carbon fiber (VGCF) are used. Composites fabricated from such materials must be coated with a refractory carbide coating in order to ensure compatibility with high temperature hydrogen. Fabrication of tungsten alloy single crystals in the sizes required for fabrication of an arcjet anode has been shown to be feasible. Test data indicate that the material can be expected to be at least the equal of W-Re-HfC polycrystalline alloy in terms of its tensile properties, and possibly superior. We are also informed by our colleagues at Scientific Production Association Luch (NP0 Luch) that it is possible to use Russian technology to fabricate polycrystalline W-Re-HfC or other high strength alloys if desired. This is important because existing engines must rely on previously accumulated stocks of these materials, and a fabrication capability for future requirements is not assured.

  18. High-performance surface-micromachined inchworm actuator.

    SciTech Connect

    Walraven, Jeremy Allen; Redmond, James Michael; Luck, David L.; Ashurst, William Robert; de Boer, Maarten Pieter; Maboudian, Roya; Corwin, Alex David

    2003-07-01

    This work demonstrates a polycrystalline silicon surface-micromachined inchworm actuator that exhibits high-performance characteristics such as large force ({+-}0.5 millinewtons), large velocity range (0 to {+-}4.4 mm/sec), large displacement range ({+-}100 microns), small step size ({+-}10, {+-}40 or {+-}100 nanometers), low power consumption (nanojoules per cycle), continuous bidirectional operation and relatively small area (600 x 200{micro}m{sup 2}). An in situ load spring calibrated on a logarithmic scale from micronewtons to millinewtons, optical microscopy and Michelson interferometry are used to characterize its performance. The actuator consists of a force-amplifying plate that spans two voltage-controlled clamps, and walking is achieved by appropriately sequencing signals to these three components. In the clamps, normal force is borne by equipotential rubbing counterfaces, enabling friction to be measured against load. Using different monolayer coatings, we show that the static coefficient of friction can be changed from 0.14 to 1.04, and that it is load-independent over a broad range. We further find that the static coefficient of friction does not accurately predict the force generated by the actuator and attribute this to nanometer-scale presliding tangential deflections.

  19. High performance polymer development

    NASA Technical Reports Server (NTRS)

    Hergenrother, Paul M.

    1991-01-01

    The term high performance as applied to polymers is generally associated with polymers that operate at high temperatures. High performance is used to describe polymers that perform at temperatures of 177 C or higher. In addition to temperature, other factors obviously influence the performance of polymers such as thermal cycling, stress level, and environmental effects. Some recent developments at NASA Langley in polyimides, poly(arylene ethers), and acetylenic terminated materials are discussed. The high performance/high temperature polymers discussed are representative of the type of work underway at NASA Langley Research Center. Further improvement in these materials as well as the development of new polymers will provide technology to help meet NASA future needs in high performance/high temperature applications. In addition, because of the combination of properties offered by many of these polymers, they should find use in many other applications.

  20. Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer

    PubMed Central

    Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei

    2016-01-01

    Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400–900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells. PMID:27924911

  1. Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer

    NASA Astrophysics Data System (ADS)

    Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei

    2016-12-01

    Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400–900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells.

  2. Role of surface-reaction layer in HBr/fluorocarbon-based plasma with nitrogen addition formed by high-aspect-ratio etching of polycrystalline silicon and SiO2 stacks

    NASA Astrophysics Data System (ADS)

    Iwase, Taku; Matsui, Miyako; Yokogawa, Kenetsu; Arase, Takao; Mori, Masahito

    2016-06-01

    The etching of polycrystalline silicon (poly-Si)/SiO2 stacks by using VHF plasma was studied for three-dimensional NAND fabrication. One critical goal is achieving both a vertical profile and high throughput for multiple-stack etching. While the conventional process consists of multiple steps for each stacked layer, in this study, HBr/fluorocarbon-based gas chemistry was investigated to achieve a single-step etching process to reduce process time. By analyzing the dependence on wafer temperature, we improved both the etching profile and rate at a low temperature. The etching mechanism is examined considering the composition of the surface reaction layer. X-ray photoelectron spectroscopy (XPS) analysis revealed that the adsorption of N-H and Br was enhanced at a low temperature, resulting in a reduced carbon-based-polymer thickness and enhanced Si etching. Finally, a vertical profile was obtained as a result of the formation of a thin and reactive surface-reaction layer at a low wafer temperature.

  3. Method of forming buried oxide layers in silicon

    DOEpatents

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2000-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  4. High performance systems

    SciTech Connect

    Vigil, M.B.

    1995-03-01

    This document provides a written compilation of the presentations and viewgraphs from the 1994 Conference on High Speed Computing given at the High Speed Computing Conference, {open_quotes}High Performance Systems,{close_quotes} held at Gleneden Beach, Oregon, on April 18 through 21, 1994.

  5. High performance parallel architectures

    SciTech Connect

    Anderson, R.E. )

    1989-09-01

    In this paper the author describes current high performance parallel computer architectures. A taxonomy is presented to show computer architecture from the user programmer's point-of-view. The effects of the taxonomy upon the programming model are described. Some current architectures are described with respect to the taxonomy. Finally, some predictions about future systems are presented. 5 refs., 1 fig.

  6. High-Performance Happy

    ERIC Educational Resources Information Center

    O'Hanlon, Charlene

    2007-01-01

    Traditionally, the high-performance computing (HPC) systems used to conduct research at universities have amounted to silos of technology scattered across the campus and falling under the purview of the researchers themselves. This article reports that a growing number of universities are now taking over the management of those systems and…

  7. High Performance, Dependable Multiprocessor

    NASA Technical Reports Server (NTRS)

    Ramos, Jeremy; Samson, John R.; Troxel, Ian; Subramaniyan, Rajagopal; Jacobs, Adam; Greco, James; Cieslewski, Grzegorz; Curreri, John; Fischer, Michael; Grobelny, Eric; George, Alan; Aggarwal, Vikas; Patel, Minesh; Some, Raphael

    2006-01-01

    With the ever increasing demand for higher bandwidth and processing capacity of today's space exploration, space science, and defense missions, the ability to efficiently apply commercial-off-the-shelf (COTS) processors for on-board computing is now a critical need. In response to this need, NASA's New Millennium Program office has commissioned the development of Dependable Multiprocessor (DM) technology for use in payload and robotic missions. The Dependable Multiprocessor technology is a COTS-based, power efficient, high performance, highly dependable, fault tolerant cluster computer. To date, Honeywell has successfully demonstrated a TRL4 prototype of the Dependable Multiprocessor [I], and is now working on the development of a TRLS prototype. For the present effort Honeywell has teamed up with the University of Florida's High-performance Computing and Simulation (HCS) Lab, and together the team has demonstrated major elements of the Dependable Multiprocessor TRLS system.

  8. High performance polymeric foams

    SciTech Connect

    Gargiulo, M.; Sorrentino, L.; Iannace, S.

    2008-08-28

    The aim of this work was to investigate the foamability of high-performance polymers (polyethersulfone, polyphenylsulfone, polyetherimide and polyethylenenaphtalate). Two different methods have been used to prepare the foam samples: high temperature expansion and two-stage batch process. The effects of processing parameters (saturation time and pressure, foaming temperature) on the densities and microcellular structures of these foams were analyzed by using scanning electron microscopy.

  9. High performance steam development

    SciTech Connect

    Duffy, T.; Schneider, P.

    1995-12-31

    DOE has launched a program to make a step change in power plant to 1500 F steam, since the highest possible performance gains can be achieved in a 1500 F steam system when using a topping turbine in a back pressure steam turbine for cogeneration. A 500-hour proof-of-concept steam generator test module was designed, fabricated, and successfully tested. It has four once-through steam generator circuits. The complete HPSS (high performance steam system) was tested above 1500 F and 1500 psig for over 102 hours at full power.

  10. High Performance Liquid Chromatography

    NASA Astrophysics Data System (ADS)

    Talcott, Stephen

    High performance liquid chromatography (HPLC) has many applications in food chemistry. Food components that have been analyzed with HPLC include organic acids, vitamins, amino acids, sugars, nitrosamines, certain pesticides, metabolites, fatty acids, aflatoxins, pigments, and certain food additives. Unlike gas chromatography, it is not necessary for the compound being analyzed to be volatile. It is necessary, however, for the compounds to have some solubility in the mobile phase. It is important that the solubilized samples for injection be free from all particulate matter, so centrifugation and filtration are common procedures. Also, solid-phase extraction is used commonly in sample preparation to remove interfering compounds from the sample matrix prior to HPLC analysis.

  11. High Performance FORTRAN

    NASA Technical Reports Server (NTRS)

    Mehrotra, Piyush

    1994-01-01

    High performance FORTRAN is a set of extensions for FORTRAN 90 designed to allow specification of data parallel algorithms. The programmer annotates the program with distribution directives to specify the desired layout of data. The underlying programming model provides a global name space and a single thread of control. Explicitly parallel constructs allow the expression of fairly controlled forms of parallelism in particular data parallelism. Thus the code is specified in a high level portable manner with no explicit tasking or communication statements. The goal is to allow architecture specific compilers to generate efficient code for a wide variety of architectures including SIMD, MIMD shared and distributed memory machines.

  12. High Performance Buildings Database

    DOE Data Explorer

    The High Performance Buildings Database is a shared resource for the building industry, a unique central repository of in-depth information and data on high-performance, green building projects across the United States and abroad. The database includes information on the energy use, environmental performance, design process, finances, and other aspects of each project. Members of the design and construction teams are listed, as are sources for additional information. In total, up to twelve screens of detailed information are provided for each project profile. Projects range in size from small single-family homes or tenant fit-outs within buildings to large commercial and institutional buildings and even entire campuses. The database is a data repository as well. A series of Web-based data-entry templates allows anyone to enter information about a building project into the database. Once a project has been submitted, each of the partner organizations can review the entry and choose whether or not to publish that particular project on its own Web site.

  13. High Performance Window Retrofit

    SciTech Connect

    Shrestha, Som S; Hun, Diana E; Desjarlais, Andre Omer

    2013-12-01

    The US Department of Energy (DOE) Office of Energy Efficiency and Renewable Energy (EERE) and Traco partnered to develop high-performance windows for commercial building that are cost-effective. The main performance requirement for these windows was that they needed to have an R-value of at least 5 ft2 F h/Btu. This project seeks to quantify the potential energy savings from installing these windows in commercial buildings that are at least 20 years old. To this end, we are conducting evaluations at a two-story test facility that is representative of a commercial building from the 1980s, and are gathering measurements on the performance of its windows before and after double-pane, clear-glazed units are upgraded with R5 windows. Additionally, we will use these data to calibrate EnergyPlus models that we will allow us to extrapolate results to other climates. Findings from this project will provide empirical data on the benefits from high-performance windows, which will help promote their adoption in new and existing commercial buildings. This report describes the experimental setup, and includes some of the field and simulation results.

  14. Thin silicon solar cells

    SciTech Connect

    Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Cotter, J.; Hughes-Lampros, T.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M.

    1992-12-01

    The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

  15. High performance sapphire windows

    NASA Technical Reports Server (NTRS)

    Bates, Stephen C.; Liou, Larry

    1993-01-01

    High-quality, wide-aperture optical access is usually required for the advanced laser diagnostics that can now make a wide variety of non-intrusive measurements of combustion processes. Specially processed and mounted sapphire windows are proposed to provide this optical access to extreme environment. Through surface treatments and proper thermal stress design, single crystal sapphire can be a mechanically equivalent replacement for high strength steel. A prototype sapphire window and mounting system have been developed in a successful NASA SBIR Phase 1 project. A large and reliable increase in sapphire design strength (as much as 10x) has been achieved, and the initial specifications necessary for these gains have been defined. Failure testing of small windows has conclusively demonstrated the increased sapphire strength, indicating that a nearly flawless surface polish is the primary cause of strengthening, while an unusual mounting arrangement also significantly contributes to a larger effective strength. Phase 2 work will complete specification and demonstration of these windows, and will fabricate a set for use at NASA. The enhanced capabilities of these high performance sapphire windows will lead to many diagnostic capabilities not previously possible, as well as new applications for sapphire.

  16. High Performance Parallel Architectures

    NASA Technical Reports Server (NTRS)

    El-Ghazawi, Tarek; Kaewpijit, Sinthop

    1998-01-01

    Traditional remote sensing instruments are multispectral, where observations are collected at a few different spectral bands. Recently, many hyperspectral instruments, that can collect observations at hundreds of bands, have been operational. Furthermore, there have been ongoing research efforts on ultraspectral instruments that can produce observations at thousands of spectral bands. While these remote sensing technology developments hold great promise for new findings in the area of Earth and space science, they present many challenges. These include the need for faster processing of such increased data volumes, and methods for data reduction. Dimension Reduction is a spectral transformation, aimed at concentrating the vital information and discarding redundant data. One such transformation, which is widely used in remote sensing, is the Principal Components Analysis (PCA). This report summarizes our progress on the development of a parallel PCA and its implementation on two Beowulf cluster configuration; one with fast Ethernet switch and the other with a Myrinet interconnection. Details of the implementation and performance results, for typical sets of multispectral and hyperspectral NASA remote sensing data, are presented and analyzed based on the algorithm requirements and the underlying machine configuration. It will be shown that the PCA application is quite challenging and hard to scale on Ethernet-based clusters. However, the measurements also show that a high- performance interconnection network, such as Myrinet, better matches the high communication demand of PCA and can lead to a more efficient PCA execution.

  17. Silicon materials outlook study for 1980-1985 calendar years

    NASA Technical Reports Server (NTRS)

    Costogue, E.; Ferber, R.; Hasbach, W.; Pellin, R.; Yaws, C.

    1979-01-01

    The polycrystalline silicon industry was studied in relation to future market needs. Analysis of the data obtained indicates that there is a high probability of polycrystalline silicon shortage by the end of 1982 and a strong seller's market after 1981 which will foster price competition for available silicon.

  18. Silicon on graphite cloth

    SciTech Connect

    Rand, J.A.; Cotter, J.E.; Thomas, C.J.; Ingram, A.E.; Bai, Y.B.; Ruffins, T.R.; Barnett, A.M.

    1994-12-31

    A new polycrystalline silicon solar cell has been developed that utilizes commercially available graphite cloth as a substrate. This solar cell has achieved an energy conversion efficiency of 13.4% (AM1.5G). It is believed that this is a record efficiency for a silicon solar cell formed on a graphite substrate. The silicon-on-fabric structure is comprised of a thin layer of polycrystalline silicon grown directly on the graphite fabric substrate. The structure is fabricated by a low-cost ribbon process that avoids the expense and waste of wafering. The fabric substrate gives structural support to the thin device. Critical to the achievement of device quality silicon layers is control over impurities in the graphite fabric. The silicon-on-fabric technology has the potential to supply lightweight, low-cost solar cells to weight-sensitive markets at a fraction of the cost of conventionally thinned wafers.

  19. Polycrystalline-silicon microbridge combustible gas sensor

    NASA Astrophysics Data System (ADS)

    Manginell, Ronald Paul

    Catalytic, calorimetric gas detection is the most commonly used method for the detection of combustible gases below the lower-explosive limit (LEL). In this method, the heat of oxidation of a combustible species on a heated catalyst surface is detected by a resistance thermometer in proximity. Conventionally fabricated sensors suffer from high-power consumption (˜500 mW), slow thermal response (˜15 sec) and low thermal sensitivity (1-2sp°C/mW). Fully CMOS-compatible, surface-micromachined polysilicon bridges have been fabricated for use in catalytic, calorimetric gas detection and are characterized by low-power consumption (35 mW), fast response (0.2 msec) and high sensitivity (16sp°C/mW). The batch fabrication techniques used here significantly increase the manufacturability of these devices as compared with their conventional predecessors, since hand manufacture/sorting conventionally used ate eliminated. A post-processing, post-packaging micro-chemical-vapor-deposition technique was developed for the purpose of selectively depositing catalytic films only in the active area of the sensor. Film microstructure was modified using a pulsed-deposition technique and in situ methods of film growth monitoring were investigated. With a Pt catalyst, ultimate device sensitivity to hydrogen was 100 ppm in air. To predict device response, knowledge of the temperature distribution along a microbridge is required. Both analytical and numerical techniques were used to model this distribution and are in good agreement with measurements obtained by infrared microscopy, For modeling purposes the temperature dependence of the thermal and electrical conductivity of polysilicon at high temperature ({>}300sp°C) were measured using microbridges outfitted with special high-temperature bond pads. Physical models of thermal and electrical conduction in polysilicon were constructed.

  20. Thermal conductivity measurements of Summit polycrystalline silicon.

    SciTech Connect

    Clemens, Rebecca; Kuppers, Jaron D.; Phinney, Leslie Mary

    2006-11-01

    A capability for measuring the thermal conductivity of microelectromechanical systems (MEMS) materials using a steady state resistance technique was developed and used to measure the thermal conductivities of SUMMiT{trademark} V layers. Thermal conductivities were measured over two temperature ranges: 100K to 350K and 293K to 575K in order to generate two data sets. The steady state resistance technique uses surface micromachined bridge structures fabricated using the standard SUMMiT fabrication process. Electrical resistance and resistivity data are reported for poly1-poly2 laminate, poly2, poly3, and poly4 polysilicon structural layers in the SUMMiT process from 83K to 575K. Thermal conductivity measurements for these polysilicon layers demonstrate for the first time that the thermal conductivity is a function of the particular SUMMiT layer. Also, the poly2 layer has a different variation in thermal conductivity as the temperature is decreased than the poly1-poly2 laminate, poly3, and poly4 layers. As the temperature increases above room temperature, the difference in thermal conductivity between the layers decreases.

  1. Thin film polycrystalline silicon nanowire biosensors.

    PubMed

    Hakim, Mohammad M A; Lombardini, Marta; Sun, Kai; Giustiniano, Francesco; Roach, Peter L; Davies, Donna E; Howarth, Peter H; de Planque, Maurits R R; Morgan, Hywel; Ashburn, Peter

    2012-04-11

    Polysilicon nanowire biosensors have been fabricated using a top-down process and were used to determine the binding constant of two inflammatory biomarkers. A very low cost nanofabrication process was developed, based on simple and mature photolithography, thin film technology, and plasma etching, enabling an easy route to mass manufacture. Antibody-functionalized nanowire sensors were used to detect the proteins interleukin-8 (IL-8) and tumor necrosis factor-alpha (TNF-α) over a wide range of concentrations, demonstrating excellent sensitivity and selectivity, exemplified by a detection sensitivity of 10 fM in the presence of a 100,000-fold excess of a nontarget protein. Nanowire titration curves gave antibody-antigen dissociation constants in good agreement with low-salt enzyme-linked immunosorbent assays (ELISAs). This fabrication process produces high-quality nanowires that are suitable for low-cost mass production, providing a realistic route to the realization of disposable nanoelectronic point-of-care (PoC) devices.

  2. Measuring Diffusion and Recombination in Polycrystalline Silicon

    NASA Technical Reports Server (NTRS)

    Zook, J. D.

    1983-01-01

    Light-beam-induced currents yield information about solar cell material. Apparatus measures short-circuit current generated when spot of concentrated light is scanned across grains and grain boundaries in material under test. Technique used to evaluate SOC samples for diffusion and recombination effects of cell processing and chemical and structural defects.

  3. Commoditization of High Performance Storage

    SciTech Connect

    Studham, Scott S.

    2004-04-01

    The commoditization of high performance computers started in the late 80s with the attack of the killer micros. Previously, high performance computers were exotic vector systems that could only be afforded by an illustrious few. Now everyone has a supercomputer composed of clusters of commodity processors. A similar commoditization of high performance storage has begun. Commodity disks are being used for high performance storage, enabling a paradigm change in storage and significantly changing the price point of high volume storage.

  4. DOE High Performance Concentrator PV Project

    SciTech Connect

    McConnell, R.; Symko-Davies, M.

    2005-08-01

    Much in demand are next-generation photovoltaic (PV) technologies that can be used economically to make a large-scale impact on world electricity production. The U.S. Department of Energy (DOE) initiated the High-Performance Photovoltaic (HiPerf PV) Project to substantially increase the viability of PV for cost-competitive applications so that PV can contribute significantly to both our energy supply and environment. To accomplish such results, the National Center for Photovoltaics (NCPV) directs in-house and subcontracted research in high-performance polycrystalline thin-film and multijunction concentrator devices with the goal of enabling progress of high-efficiency technologies toward commercial-prototype products. We will describe the details of the subcontractor and in-house progress in exploring and accelerating pathways of III-V multijunction concentrator solar cells and systems toward their long-term goals. By 2020, we anticipate that this project will have demonstrated 33% system efficiency and a system price of $1.00/Wp for concentrator PV systems using III-V multijunction solar cells with efficiencies over 41%.

  5. Process For Direct Integration Of A Thin-Film Silicon P-N Junction Diode With A Magnetic Tunnel Junction

    DOEpatents

    Toet, Daniel; Sigmon, Thomas W.

    2005-08-23

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  6. Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

    DOEpatents

    Toet, Daniel; Sigmon, Thomas W.

    2003-01-01

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  7. Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

    DOEpatents

    Toet, Daniel; Sigmon, Thomas W.

    2004-12-07

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  8. High performance anode for advanced Li batteries

    SciTech Connect

    Lake, Carla

    2015-11-02

    The overall objective of this Phase I SBIR effort was to advance the manufacturing technology for ASI’s Si-CNF high-performance anode by creating a framework for large volume production and utilization of low-cost Si-coated carbon nanofibers (Si-CNF) for the battery industry. This project explores the use of nano-structured silicon which is deposited on a nano-scale carbon filament to achieve the benefits of high cycle life and high charge capacity without the consequent fading of, or failure in the capacity resulting from stress-induced fracturing of the Si particles and de-coupling from the electrode. ASI’s patented coating process distinguishes itself from others, in that it is highly reproducible, readily scalable and results in a Si-CNF composite structure containing 25-30% silicon, with a compositionally graded interface at the Si-CNF interface that significantly improve cycling stability and enhances adhesion of silicon to the carbon fiber support. In Phase I, the team demonstrated the production of the Si-CNF anode material can successfully be transitioned from a static bench-scale reactor into a fluidized bed reactor. In addition, ASI made significant progress in the development of low cost, quick testing methods which can be performed on silicon coated CNFs as a means of quality control. To date, weight change, density, and cycling performance were the key metrics used to validate the high performance anode material. Under this effort, ASI made strides to establish a quality control protocol for the large volume production of Si-CNFs and has identified several key technical thrusts for future work. Using the results of this Phase I effort as a foundation, ASI has defined a path forward to commercialize and deliver high volume and low-cost production of SI-CNF material for anodes in Li-ion batteries.

  9. High Performance Fortran: An overview

    SciTech Connect

    Zosel, M.E.

    1992-12-23

    The purpose of this paper is to give an overview of the work of the High Performance Fortran Forum (HPFF). This group of industry, academic, and user representatives has been meeting to define a set of extensions for Fortran dedicated to the special problems posed by a very high performance computers, especially the new generation of parallel computers. The paper describes the HPFF effort and its goals and gives a brief description of the functionality of High Performance Fortran (HPF).

  10. High Performance Thin Layer Chromatography.

    ERIC Educational Resources Information Center

    Costanzo, Samuel J.

    1984-01-01

    Clarifies where in the scheme of modern chromatography high performance thin layer chromatography (TLC) fits and why in some situations it is a viable alternative to gas and high performance liquid chromatography. New TLC plates, sample applications, plate development, and instrumental techniques are considered. (JN)

  11. Designing 3D Multihierarchical Heteronanostructures for High-Performance On-Chip Hybrid Supercapacitors: Poly(3,4-(ethylenedioxy)thiophene)-Coated Diamond/Silicon Nanowire Electrodes in an Aprotic Ionic Liquid.

    PubMed

    Aradilla, David; Gao, Fang; Lewes-Malandrakis, Georgia; Müller-Sebert, Wolfgang; Gentile, Pascal; Boniface, Maxime; Aldakov, Dmitry; Iliev, Boyan; Schubert, Thomas J S; Nebel, Christoph E; Bidan, Gérard

    2016-07-20

    A versatile and robust hierarchically multifunctionalized nanostructured material made of poly(3,4-(ethylenedioxy)thiophene) (PEDOT)-coated diamond@silicon nanowires has been demonstrated to be an excellent capacitive electrode for supercapacitor devices. Thus, the electrochemical deposition of nanometric PEDOT films on diamond-coated silicon nanowire (SiNW) electrodes using N-methyl-N-propylpyrrolidinium bis((trifluoromethyl)sulfonyl)imide ionic liquid displayed a specific capacitance value of 140 F g(-1) at a scan rate of 1 mV s(-1). The as-grown functionalized electrodes were evaluated in a symmetric planar microsupercapacitor using butyltrimethylammonium bis((trifluoromethyl)sulfonyl)imide aprotic ionic liquid as the electrolyte. The device exhibited extraordinary energy and power density values of 26 mJ cm(-2) and 1.3 mW cm(-2) within a large voltage cell of 2.5 V, respectively. In addition, the system was able to retain 80% of its initial capacitance after 15 000 galvanostatic charge-discharge cycles at a high current density of 1 mA cm(-2) while maintaining a Coulombic efficiency around 100%. Therefore, this multifunctionalized hybrid device represents one of the best electrochemical performances concerning coated SiNW electrodes for a high-energy advanced on-chip supercapacitor.

  12. Polycrystalline semiconductor processing

    DOEpatents

    Glaeser, Andreas M.; Haggerty, John S.; Danforth, Stephen C.

    1983-01-01

    A process for forming large-grain polycrystalline films from amorphous films for use as photovoltaic devices. The process operates on the amorphous film and uses the driving force inherent to the transition from the amorphous state to the crystalline state as the force which drives the grain growth process. The resultant polycrystalline film is characterized by a grain size that is greater than the thickness of the film. A thin amorphous film is deposited on a substrate. The formation of a plurality of crystalline embryos is induced in the amorphous film at predetermined spaced apart locations and nucleation is inhibited elsewhere in the film. The crystalline embryos are caused to grow in the amorphous film, without further nucleation occurring in the film, until the growth of the embryos is halted by imgingement on adjacently growing embryos. The process is applicable to both batch and continuous processing techniques. In either type of process, the thin amorphous film is sequentially doped with p and n type dopants. Doping is effected either before or after the formation and growth of the crystalline embryos in the amorphous film, or during a continuously proceeding crystallization step.

  13. Polycrystalline semiconductor processing

    DOEpatents

    Glaeser, A.M.; Haggerty, J.S.; Danforth, S.C.

    1983-04-05

    A process is described for forming large-grain polycrystalline films from amorphous films for use as photovoltaic devices. The process operates on the amorphous film and uses the driving force inherent to the transition from the amorphous state to the crystalline state as the force which drives the grain growth process. The resultant polycrystalline film is characterized by a grain size that is greater than the thickness of the film. A thin amorphous film is deposited on a substrate. The formation of a plurality of crystalline embryos is induced in the amorphous film at predetermined spaced apart locations and nucleation is inhibited elsewhere in the film. The crystalline embryos are caused to grow in the amorphous film, without further nucleation occurring in the film, until the growth of the embryos is halted by impingement on adjacently growing embryos. The process is applicable to both batch and continuous processing techniques. In either type of process, the thin amorphous film is sequentially doped with p and n type dopants. Doping is effected either before or after the formation and growth of the crystalline embryos in the amorphous film, or during a continuously proceeding crystallization step. 10 figs.

  14. Phosphorus and boron diffusion paths in polycrystalline silicon gate of a trench-type three-dimensional metal-oxide-semiconductor field effect transistor investigated by atom probe tomography

    SciTech Connect

    Han, Bin Takamizawa, Hisashi Shimizu, Yasuo; Inoue, Koji; Nagai, Yasuyoshi; Yano, Fumiko; Kunimune, Yorinobu; Inoue, Masao; Nishida, Akio

    2015-07-13

    The dopant (P and B) diffusion path in n- and p-types polycrystalline-Si gates of trench-type three-dimensional (3D) metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated using atom probe tomography, based on the annealing time dependence of the dopant distribution at 900 °C. Remarkable differences were observed between P and B diffusion behavior. In the initial stage of diffusion, P atoms diffuse into deeper regions from the implanted region along grain boundaries in the n-type polycrystalline-Si gate. With longer annealing times, segregation of P on the grain boundaries was observed; however, few P atoms were observed within the large grains or on the gate/gate oxide interface distant from grain boundaries. These results indicate that P atoms diffuse along grain boundaries much faster than through the bulk or along the gate/gate oxide interface. On the other hand, in the p-type polycrystalline-Si gate, segregation of B was observed only at the initial stage of diffusion. After further annealing, the B atoms became uniformly distributed, and no clear segregation of B was observed. Therefore, B atoms diffuse not only along the grain boundary but also through the bulk. Furthermore, B atoms diffused deeper than P atoms along the grain boundaries under the same annealing conditions. This information on the diffusion behavior of P and B is essential for optimizing annealing conditions in order to control the P and B distributions in the polycrystalline-Si gates of trench-type 3D MOSFETs.

  15. Multilayer high performance insulation materials

    NASA Technical Reports Server (NTRS)

    Stuckey, J. M.

    1971-01-01

    A number of tests are required to evaluate both multilayer high performance insulation samples and the materials that comprise them. Some of the techniques and tests being employed for these evaluations and some of the results obtained from thermal conductivity tests, outgassing studies, effect of pressure on layer density tests, hypervelocity impact tests, and a multilayer high performance insulation ambient storage program at the Kennedy Space Center are presented.

  16. Tough high performance composite matrix

    NASA Technical Reports Server (NTRS)

    Pater, Ruth H. (Inventor); Johnston, Norman J. (Inventor)

    1994-01-01

    This invention is a semi-interpentrating polymer network which includes a high performance thermosetting polyimide having a nadic end group acting as a crosslinking site and a high performance linear thermoplastic polyimide. Provided is an improved high temperature matrix resin which is capable of performing in the 200 to 300 C range. This resin has significantly improved toughness and microcracking resistance, excellent processability, mechanical performance, and moisture and solvent resistances.

  17. Silicon-on-ceramic process: Silicon sheet growth and device development for the large-area silicon sheet task of the low-cost solar array project

    NASA Technical Reports Server (NTRS)

    Whitehead, A. B.; Zook, J. D.; Grung, B. L.; Heaps, J. D.; Schmit, F.; Schuldt, S. B.; Chapman, P. W.

    1981-01-01

    The technical feasibility of producing solar cell quality sheet silicon to meet the DOE 1986 cost goal of 70 cents/watt was investigated. The silicon on ceramic approach is to coat a low cost ceramic substrate with large grain polycrystalline silicon by unidirectional solidification of molten silicon. Results and accomplishments are summarized.

  18. Dissolution chemistry and biocompatibility of silicon- and germanium-based semiconductors for transient electronics.

    PubMed

    Kang, Seung-Kyun; Park, Gayoung; Kim, Kyungmin; Hwang, Suk-Won; Cheng, Huanyu; Shin, Jiho; Chung, Sangjin; Kim, Minjin; Yin, Lan; Lee, Jeong Chul; Lee, Kyung-Mi; Rogers, John A

    2015-05-06

    Semiconducting materials are central to the development of high-performance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems. The results reported here include comprehensive studies of the dissolution by hydrolysis of polycrystalline silicon, amorphous silicon, silicon-germanium, and germanium in aqueous solutions of various pH values and temperatures. In vitro cellular toxicity evaluations demonstrate the biocompatibility of the materials and end products of dissolution, thereby supporting their potential for use in biodegradable electronics. A fully dissolvable thin-film solar cell illustrates the ability to integrate these semiconductors into functional systems.

  19. Optical interconnection networks for high-performance computing systems.

    PubMed

    Biberman, Aleksandr; Bergman, Keren

    2012-04-01

    Enabled by silicon photonic technology, optical interconnection networks have the potential to be a key disruptive technology in computing and communication industries. The enduring pursuit of performance gains in computing, combined with stringent power constraints, has fostered the ever-growing computational parallelism associated with chip multiprocessors, memory systems, high-performance computing systems and data centers. Sustaining these parallelism growths introduces unique challenges for on- and off-chip communications, shifting the focus toward novel and fundamentally different communication approaches. Chip-scale photonic interconnection networks, enabled by high-performance silicon photonic devices, offer unprecedented bandwidth scalability with reduced power consumption. We demonstrate that the silicon photonic platforms have already produced all the high-performance photonic devices required to realize these types of networks. Through extensive empirical characterization in much of our work, we demonstrate such feasibility of waveguides, modulators, switches and photodetectors. We also demonstrate systems that simultaneously combine many functionalities to achieve more complex building blocks. We propose novel silicon photonic devices, subsystems, network topologies and architectures to enable unprecedented performance of these photonic interconnection networks. Furthermore, the advantages of photonic interconnection networks extend far beyond the chip, offering advanced communication environments for memory systems, high-performance computing systems, and data centers.

  20. Gelcasting Polycrystalline Alumina

    SciTech Connect

    Janney, M.A.; Zuk, K.J.; Wei, G.C.

    2000-01-01

    OSRAM SYLVANIA INC. is a major U.S. manufacturer of high-intensity lighting. Among its products is the Lumalux TM line of high-pressure sodium vapor arc lamps, which are used for industrial, highway, and street lighting. The key to the performance of these lamps is the polycrystalline alumina (PCA) tube that is used to contain the plasma that is formed in the electric arc. That plasma consists of ionized sodium, mercury, and xenon vapors. The key attributes of the PCA tubes are their transparency ({approximately}97% total transmittance in the visible), their refractoriness (inner wall temperature can reach l2OOC), and their chemical resistance (sodium and mercury vapor are extremely corrosive). The current efficiency of the lamps is very high, up to 100 initial lumens per watt. (Compare incandescent lamps 10-20 lumens per watt, fluorescent lamps 25-90 lumens per watt.)

  1. High performance computing applications in neurobiological research

    NASA Technical Reports Server (NTRS)

    Ross, Muriel D.; Cheng, Rei; Doshay, David G.; Linton, Samuel W.; Montgomery, Kevin; Parnas, Bruce R.

    1994-01-01

    The human nervous system is a massively parallel processor of information. The vast numbers of neurons, synapses and circuits is daunting to those seeking to understand the neural basis of consciousness and intellect. Pervading obstacles are lack of knowledge of the detailed, three-dimensional (3-D) organization of even a simple neural system and the paucity of large scale, biologically relevant computer simulations. We use high performance graphics workstations and supercomputers to study the 3-D organization of gravity sensors as a prototype architecture foreshadowing more complex systems. Scaled-down simulations run on a Silicon Graphics workstation and scale-up, three-dimensional versions run on the Cray Y-MP and CM5 supercomputers.

  2. Low temperature production of large-grain polycrystalline semiconductors

    DOEpatents

    Naseem, Hameed A.; Albarghouti, Marwan

    2007-04-10

    An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

  3. Abnormality in fracture strength of polycrystalline silicene

    NASA Astrophysics Data System (ADS)

    Liu, Ning; Hong, Jiawang; Pidaparti, Ramana; Wang, Xianqiao

    2016-09-01

    Silicene, a silicon-based homologue of graphene, arouses great interest in nano-electronic devices due to its outstanding electronic properties. However, its promising electronic applications are greatly hindered by lack of understanding in the mechanical strength of silicene. Therefore, in order to design mechanically reliable devices with silicene, it is necessary to thoroughly explore the mechanical properties of silicene. Due to current fabrication methods, graphene is commonly produced in a polycrystalline form; the same may hold for silicene. Here we perform molecular dynamics simulations to investigate the mechanical properties of polycrystalline silicene. First, an annealing process is employed to construct a more realistic modeling structure of polycrystalline silicene. Results indicate that a more stable structure is formed due to the breaking and reformation of bonds between atoms on the grain boundaries. Moreover, as the grain size decreases, the efficiency of the annealing process, which is quantified by the energy change, increases. Subsequently, biaxial tensile tests are performed on the annealed samples in order to explore the relation between grain size and mechanical properties, namely in-plane stiffness, fracture strength and fracture strain etc. Results indicate that as the grain size decreases, the fracture strain increases while the fracture strength shows an inverse trend. The decreasing fracture strength may be partly attributed to the weakening effect from the increasing area density of defects which acts as the reservoir of stress-concentrated sites on the grain boundary. The observed crack localization and propagation and fracture strength are well-explained by a defect-pileup model.

  4. High-Performance Liquid Chromatography

    NASA Astrophysics Data System (ADS)

    Reuhs, Bradley L.; Rounds, Mary Ann

    High-performance liquid chromatography (HPLC) developed during the 1960s as a direct offshoot of classic column liquid chromatography through improvements in the technology of columns and instrumental components (pumps, injection valves, and detectors). Originally, HPLC was the acronym for high-pressure liquid chromatography, reflecting the high operating pressures generated by early columns. By the late 1970s, however, high-performance liquid chromatography had become the preferred term, emphasizing the effective separations achieved. In fact, newer columns and packing materials offer high performance at moderate pressure (although still high pressure relative to gravity-flow liquid chromatography). HPLC can be applied to the analysis of any compound with solubility in a liquid that can be used as the mobile phase. Although most frequently employed as an analytical technique, HPLC also may be used in the preparative mode.

  5. High Performance Computing at NASA

    NASA Technical Reports Server (NTRS)

    Bailey, David H.; Cooper, D. M. (Technical Monitor)

    1994-01-01

    The speaker will give an overview of high performance computing in the U.S. in general and within NASA in particular, including a description of the recently signed NASA-IBM cooperative agreement. The latest performance figures of various parallel systems on the NAS Parallel Benchmarks will be presented. The speaker was one of the authors of the NAS (National Aerospace Standards) Parallel Benchmarks, which are now widely cited in the industry as a measure of sustained performance on realistic high-end scientific applications. It will be shown that significant progress has been made by the highly parallel supercomputer industry during the past year or so, with several new systems, based on high-performance RISC processors, that now deliver superior performance per dollar compared to conventional supercomputers. Various pitfalls in reporting performance will be discussed. The speaker will then conclude by assessing the general state of the high performance computing field.

  6. INL High Performance Building Strategy

    SciTech Connect

    Jennifer D. Morton

    2010-02-01

    High performance buildings, also known as sustainable buildings and green buildings, are resource efficient structures that minimize the impact on the environment by using less energy and water, reduce solid waste and pollutants, and limit the depletion of natural resources while also providing a thermally and visually comfortable working environment that increases productivity for building occupants. As Idaho National Laboratory (INL) becomes the nation’s premier nuclear energy research laboratory, the physical infrastructure will be established to help accomplish this mission. This infrastructure, particularly the buildings, should incorporate high performance sustainable design features in order to be environmentally responsible and reflect an image of progressiveness and innovation to the public and prospective employees. Additionally, INL is a large consumer of energy that contributes to both carbon emissions and resource inefficiency. In the current climate of rising energy prices and political pressure for carbon reduction, this guide will help new construction project teams to design facilities that are sustainable and reduce energy costs, thereby reducing carbon emissions. With these concerns in mind, the recommendations described in the INL High Performance Building Strategy (previously called the INL Green Building Strategy) are intended to form the INL foundation for high performance building standards. This revised strategy incorporates the latest federal and DOE orders (Executive Order [EO] 13514, “Federal Leadership in Environmental, Energy, and Economic Performance” [2009], EO 13423, “Strengthening Federal Environmental, Energy, and Transportation Management” [2007], and DOE Order 430.2B, “Departmental Energy, Renewable Energy, and Transportation Management” [2008]), the latest guidelines, trends, and observations in high performance building construction, and the latest changes to the Leadership in Energy and Environmental Design

  7. High performance flexible heat pipes

    NASA Technical Reports Server (NTRS)

    Shaubach, R. M.; Gernert, N. J.

    1985-01-01

    A Phase I SBIR NASA program for developing and demonstrating high-performance flexible heat pipes for use in the thermal management of spacecraft is examined. The program combines several technologies such as flexible screen arteries and high-performance circumferential distribution wicks within an envelope which is flexible in the adiabatic heat transport zone. The first six months of work during which the Phase I contract goal were met, are described. Consideration is given to the heat-pipe performance requirements. A preliminary evaluation shows that the power requirement for Phase II of the program is 30.5 kilowatt meters at an operating temperature from 0 to 100 C.

  8. High performance hand-held gas chromatograph

    SciTech Connect

    Yu, C.M.

    1998-04-28

    The Microtechnology Center of Lawrence Livermore National Laboratory has developed a high performance hand-held, real time detection gas chromatograph (HHGC) by Micro-Electro-Mechanical-System (MEMS) technology. The total weight of this hand-held gas chromatograph is about five lbs., with a physical size of 8{close_quotes} x 5{close_quotes} x 3{close_quotes} including carrier gas and battery. It consumes about 12 watts of electrical power with a response time on the order of one to two minutes. This HHGC has an average effective theoretical plate of about 40k. Presently, its sensitivity is limited by its thermal sensitive detector at PPM. Like a conventional G.C., this HHGC consists mainly of three major components: (1) the sample injector, (2) the column, and (3) the detector with related electronics. The present HHGC injector is a modified version of the conventional injector. Its separation column is fabricated completely on silicon wafers by means of MEMS technology. This separation column has a circular cross section with a diameter of 100 pm. The detector developed for this hand-held GC is a thermal conductivity detector fabricated on a silicon nitride window by MEMS technology. A normal Wheatstone bridge is used. The signal is fed into a PC and displayed through LabView software.

  9. A Linux Workstation for High Performance Graphics

    NASA Technical Reports Server (NTRS)

    Geist, Robert; Westall, James

    2000-01-01

    The primary goal of this effort was to provide a low-cost method of obtaining high-performance 3-D graphics using an industry standard library (OpenGL) on PC class computers. Previously, users interested in doing substantial visualization or graphical manipulation were constrained to using specialized, custom hardware most often found in computers from Silicon Graphics (SGI). We provided an alternative to expensive SGI hardware by taking advantage of third-party, 3-D graphics accelerators that have now become available at very affordable prices. To make use of this hardware our goal was to provide a free, redistributable, and fully-compatible OpenGL work-alike library so that existing bodies of code could simply be recompiled. for PC class machines running a free version of Unix. This should allow substantial cost savings while greatly expanding the population of people with access to a serious graphics development and viewing environment. This should offer a means for NASA to provide a spectrum of graphics performance to its scientists, supplying high-end specialized SGI hardware for high-performance visualization while fulfilling the requirements of medium and lower performance applications with generic, off-the-shelf components and still maintaining compatibility between the two.

  10. High Performance Bulk Thermoelectric Materials

    SciTech Connect

    Ren, Zhifeng

    2013-03-31

    Over 13 plus years, we have carried out research on electron pairing symmetry of superconductors, growth and their field emission property studies on carbon nanotubes and semiconducting nanowires, high performance thermoelectric materials and other interesting materials. As a result of the research, we have published 104 papers, have educated six undergraduate students, twenty graduate students, nine postdocs, nine visitors, and one technician.

  11. Continuous method of producing silicon carbide fibers

    NASA Technical Reports Server (NTRS)

    Barnard, Thomas Duncan (Inventor); Nguyen, Kimmai Thi (Inventor); Rabe, James Alan (Inventor)

    1999-01-01

    This invention pertains to a method for production of polycrystalline ceramic fibers from silicon oxycarbide (SiCO) ceramic fibers wherein the method comprises heating an amorphous ceramic fiber containing silicon and carbon in an inert environment comprising a boron oxide and carbon monoxide at a temperature sufficient to convert the amorphous ceramic fiber to a polycrystalline ceramic fiber. By having carbon monoxide present during the heating of the ceramic fiber, it is possible to achieve higher production rates on a continuous process.

  12. Exploring Two-Dimensional Transport Phenomena in Metal Oxide Heterointerfaces for Next-Generation, High-Performance, Thin-Film Transistor Technologies.

    PubMed

    Labram, John G; Lin, Yen-Hung; Anthopoulos, Thomas D

    2015-11-04

    In the last decade, metal oxides have emerged as a fascinating class of electronic material, exhibiting a wide range of unique and technologically relevant characteristics. For example, thin-film transistors formed from amorphous or polycrystalline metal oxide semiconductors offer the promise of low-cost, large-area, and flexible electronics, exhibiting performances comparable to or in excess of incumbent silicon-based technologies. Atomically flat interfaces between otherwise insulating or semiconducting complex oxides, are also found to be highly conducting, displaying 2-dimensional (2D) charge transport properties, strong correlations, and even superconductivity. Field-effect devices employing such carefully engineered interfaces are hoped to one day compete with traditional group IV or III-V semiconductors for use in the next-generation of high-performance electronics. In this Concept article we provide an overview of the different metal oxide transistor technologies and potential future research directions. In particular, we look at the recent reports of multilayer oxide thin-film transistors and the possibility of 2D electron transport in these disordered/polycrystalline systems and discuss the potential of the technology for applications in large-area electronics.

  13. Process for forming retrograde profiles in silicon

    DOEpatents

    Weiner, K.H.; Sigmon, T.W.

    1996-10-15

    A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  14. Process for forming retrograde profiles in silicon

    DOEpatents

    Weiner, Kurt H.; Sigmon, Thomas W.

    1996-01-01

    A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  15. High performance bilateral telerobot control.

    PubMed

    Kline-Schoder, Robert; Finger, William; Hogan, Neville

    2002-01-01

    Telerobotic systems are used when the environment that requires manipulation is not easily accessible to humans, as in space, remote, hazardous, or microscopic applications or to extend the capabilities of an operator by scaling motions and forces. The Creare control algorithm and software is an enabling technology that makes possible guaranteed stability and high performance for force-feedback telerobots. We have developed the necessary theory, structure, and software design required to implement high performance telerobot systems with time delay. This includes controllers for the master and slave manipulators, the manipulator servo levels, the communication link, and impedance shaping modules. We verified the performance using both bench top hardware as well as a commercial microsurgery system.

  16. High performance dielectric materials development

    NASA Astrophysics Data System (ADS)

    Piche, Joe; Kirchner, Ted; Jayaraj, K.

    1994-09-01

    The mission of polymer composites materials technology is to develop materials and processing technology to meet DoD and commercial needs. The following are outlined in this presentation: high performance capacitors, high temperature aerospace insulation, rationale for choosing Foster-Miller (the reporting industry), the approach to the development and evaluation of high temperature insulation materials, and the requirements/evaluation parameters. Supporting tables and diagrams are included.

  17. High performance ammonium nitrate propellant

    NASA Technical Reports Server (NTRS)

    Anderson, F. A. (Inventor)

    1979-01-01

    A high performance propellant having greatly reduced hydrogen chloride emission is presented. It is comprised of: (1) a minor amount of hydrocarbon binder (10-15%), (2) at least 85% solids including ammonium nitrate as the primary oxidizer (about 40% to 70%), (3) a significant amount (5-25%) powdered metal fuel, such as aluminum, (4) a small amount (5-25%) of ammonium perchlorate as a supplementary oxidizer, and (5) optionally a small amount (0-20%) of a nitramine.

  18. High-performance sports medicine.

    PubMed

    Speed, Cathy

    2013-02-01

    High performance sports medicine involves the medical care of athletes, who are extraordinary individuals and who are exposed to intensive physical and psychological stresses during training and competition. The physician has a broad remit and acts as a 'medical guardian' to optimise health while minimising risks. This review describes this interesting field of medicine, its unique challenges and priorities for the physician in delivering best healthcare.

  19. High performance dielectric materials development

    NASA Technical Reports Server (NTRS)

    Piche, Joe; Kirchner, Ted; Jayaraj, K.

    1994-01-01

    The mission of polymer composites materials technology is to develop materials and processing technology to meet DoD and commercial needs. The following are outlined in this presentation: high performance capacitors, high temperature aerospace insulation, rationale for choosing Foster-Miller (the reporting industry), the approach to the development and evaluation of high temperature insulation materials, and the requirements/evaluation parameters. Supporting tables and diagrams are included.

  20. High Performance Tools And Technologies

    SciTech Connect

    Collette, M R; Corey, I R; Johnson, J R

    2005-01-24

    This goal of this project was to evaluate the capability and limits of current scientific simulation development tools and technologies with specific focus on their suitability for use with the next generation of scientific parallel applications and High Performance Computing (HPC) platforms. The opinions expressed in this document are those of the authors, and reflect the authors' current understanding and functionality of the many tools investigated. As a deliverable for this effort, we are presenting this report describing our findings along with an associated spreadsheet outlining current capabilities and characteristics of leading and emerging tools in the high performance computing arena. This first chapter summarizes our findings (which are detailed in the other chapters) and presents our conclusions, remarks, and anticipations for the future. In the second chapter, we detail how various teams in our local high performance community utilize HPC tools and technologies, and mention some common concerns they have about them. In the third chapter, we review the platforms currently or potentially available to utilize these tools and technologies on to help in software development. Subsequent chapters attempt to provide an exhaustive overview of the available parallel software development tools and technologies, including their strong and weak points and future concerns. We categorize them as debuggers, memory checkers, performance analysis tools, communication libraries, data visualization programs, and other parallel development aides. The last chapter contains our closing information. Included with this paper at the end is a table of the discussed development tools and their operational environment.

  1. Gelcasting polycrystalline alumina

    SciTech Connect

    Janney, M.A.

    1997-04-01

    This work is being done as part of a CRADA with Osram-Sylvania, Inc. (OSI) OSI is a major U.S. manufacturer of high-intensity lighting. Among its products is the Lumalux{reg_sign} line of high-pressure sodium vapor arc lamps, which are used for industrial, highway, and street lighting. The key to the performance of these lamps is the polycrystalline alumina (PCA) tube that is used to contain the plasma that is formed in the electric arc. That plasma consists of ionized sodium, mercury, and xenon vapors. The key attributes of the PCA tubes are their transparency (95% total transmittance in the visible region), their refractoriness (inner wall temperature can reach 1400{degrees}C), and their chemical resistance (sodium and mercury vapor are extremely corrosive). The current efficiency of the lamps is very high, on the order of several hundred lumens / watt. (Compare - incandescent lamps -13 lumens/watt fluorescent lamps -30 lumens/watt.) Osram-Sylvania would like to explore using gelcasting to form PCA tubes for Lumalux{reg_sign} lamps, and eventually for metal halide lamps (known as quartz-halogen lamps). Osram-Sylvania, Inc. currently manufactures PCA tubes by isostatic pressing. This process works well for the shapes that they presently use. However, there are several types of tubes that are either difficult or impossible to make by isostatic pressing. It is the desire to make these new shapes and sizes of tubes that has prompted Osram-Sylvania`s interest in gelcasting. The purpose of the CRADA is to determine the feasibility of making PCA items having sufficient optical quality that they are useful in lighting applications using gelcasting.

  2. Porous silicon gettering

    SciTech Connect

    Tsuo, Y.S.; Menna, P.; Pitts, J.R.

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  3. High performance Vernier racetrack resonators.

    PubMed

    Boeck, Robert; Flueckiger, Jonas; Yun, Han; Chrostowski, Lukas; Jaeger, Nicolas A F

    2012-12-15

    We demonstrate record performance of series-coupled silicon racetrack resonators exhibiting the Vernier effect. Our device has an interstitial peak suppression (IPS) of 25.5 dB, which is 14.5 dB larger than previously reported results. We also demonstrate the relationship between the inter-ring gap distance and the IPS as well as the 3 dB bandwidth (BW) both theoretically and experimentally. Namely, we show that as the inter-ring gap distance increases, the IPS increases and the 3 dB BW decreases.

  4. Conduction mechanisms in undoped polycrystalline diamond films

    NASA Astrophysics Data System (ADS)

    Chou, Hsueh-Tao; Lee, Chia-Chang; Sun, Chia-Hsin

    2000-07-01

    The unadopted polycrystalline diamond films are deposited on p-type silicon substrates by a microwave plasma chemical vapor deposition (MPCVD) system. The deposition conditions are CH4?/H(subscript 2=0.5%, pressure equals 45 torr, power equals 2.2kW, and subtract temperature equals 885 degree(s)C. SEM was used to inspect the surface morphology, Raman Spectroscopy to determine the quality, and XPS to analyze the chemical composition. It in concluded that a cleaning procedure on diamond surfaces can eliminate the carbon phase but enhance the oxygenation on the films. The electrical characteristics were investigated by current-voltage-temperature measurements in a metal-insulator-semiconductor (MIS) structure with top metal contacts and back silicon substrates contacts. It can be found a transition electric field of 240 kV/cm, where Schottky emission (SE) mechanism is responsible for electric conduction below 240kV/cm, and Poole-Frenkel transport (PF) mechanism dominates beyond 240 kV/cm. By the extrapolations, the Schottky barrier height of silver and diamond film is 2.4 eV, and the tarp depth is 4.75 eV in the diamond film.

  5. High performance pyroelectric infrared detector

    NASA Astrophysics Data System (ADS)

    Hu, Xu; Luo, Haosu; Ji, Yulong; Yang, Chunli

    2015-10-01

    Single infrared detector made with Relaxative ferroelectric crystal(PMNT) present excellence performance. In this paper include detector capacitance, characteristic of frequency--response, characteristic of detectivity. The measure result show that detectivity of detector made with relaxative ferroelectric crystal(PMNT) exceed three times than made with LT, the D*achieved than 1*109cmHz0.5W-1. The detector will be applied on NDIR spectrograph, FFT spectrograph and so on. The high performance pyroelectric infrared detector be developed that will be broadened application area of infrared detector.

  6. High-performance permanent magnets.

    PubMed

    Goll, D; Kronmüller, H

    2000-10-01

    High-performance permanent magnets (pms) are based on compounds with outstanding intrinsic magnetic properties as well as on optimized microstructures and alloy compositions. The most powerful pm materials at present are RE-TM intermetallic alloys which derive their exceptional magnetic properties from the favourable combination of rare earth metals (RE = Nd, Pr, Sm) with transition metals (TM = Fe, Co), in particular magnets based on (Nd.Pr)2Fe14B and Sm2(Co,Cu,Fe,Zr)17. Their development during the last 20 years has involved a dramatic improvement in their performance by a factor of > 15 compared with conventional ferrite pms therefore contributing positively to the ever-increasing demand for pms in many (including new) application fields, to the extent that RE-TM pms now account for nearly half of the worldwide market. This review article first gives a brief introduction to the basics of ferromagnetism to confer an insight into the variety of (permanent) magnets, their manufacture and application fields. We then examine the rather complex relationship between the microstructure and the magnetic properties for the two highest-performance and most promising pm materials mentioned. By using numerical micromagnetic simulations on the basis of the Finite Element technique the correlation can be quantitatively predicted, thus providing a powerful tool for the further development of optimized high-performance pms.

  7. High-performance permanent magnets

    NASA Astrophysics Data System (ADS)

    Goll, D.; Kronmüller, H.

    High-performance permanent magnets (pms) are based on compounds with outstanding intrinsic magnetic properties as well as on optimized microstructures and alloy compositions. The most powerful pm materials at present are RE-TM intermetallic alloys which derive their exceptional magnetic properties from the favourable combination of rare earth metals (RE=Nd, Pr, Sm) with transition metals (TM=Fe, Co), in particular magnets based on (Nd,Pr)2Fe14B and Sm2(Co,Cu,Fe,Zr)17. Their development during the last 20 years has involved a dramatic improvement in their performance by a factor of >15 compared with conventional ferrite pms therefore contributing positively to the ever-increasing demand for pms in many (including new) application fields, to the extent that RE-TM pms now account for nearly half of the worldwide market. This review article first gives a brief introduction to the basics of ferromagnetism to confer an insight into the variety of (permanent) magnets, their manufacture and application fields. We then examine the rather complex relationship between the microstructure and the magnetic properties for the two highest-performance and most promising pm materials mentioned. By using numerical micromagnetic simulations on the basis of the Finite Element technique the correlation can be quantitatively predicted, thus providing a powerful tool for the further development of optimized high-performance pms.

  8. High performance rotational vibration isolator

    NASA Astrophysics Data System (ADS)

    Sunderland, Andrew; Blair, David G.; Ju, Li; Golden, Howard; Torres, Francis; Chen, Xu; Lockwood, Ray; Wolfgram, Peter

    2013-10-01

    We present a new rotational vibration isolator with an extremely low resonant frequency of 0.055 ± 0.002 Hz. The isolator consists of two concentric spheres separated by a layer of water and joined by very soft silicone springs. The isolator reduces rotation noise at all frequencies above its resonance which is very important for airborne mineral detection. We show that more than 40 dB of isolation is achieved in a helicopter survey for rotations at frequencies between 2 Hz and 20 Hz. Issues affecting performance such as translation to rotation coupling and temperature are discussed. The isolator contains almost no metal, making it particularly suitable for electromagnetic sensors.

  9. High performance rotational vibration isolator.

    PubMed

    Sunderland, Andrew; Blair, David G; Ju, Li; Golden, Howard; Torres, Francis; Chen, Xu; Lockwood, Ray; Wolfgram, Peter

    2013-10-01

    We present a new rotational vibration isolator with an extremely low resonant frequency of 0.055 ± 0.002 Hz. The isolator consists of two concentric spheres separated by a layer of water and joined by very soft silicone springs. The isolator reduces rotation noise at all frequencies above its resonance which is very important for airborne mineral detection. We show that more than 40 dB of isolation is achieved in a helicopter survey for rotations at frequencies between 2 Hz and 20 Hz. Issues affecting performance such as translation to rotation coupling and temperature are discussed. The isolator contains almost no metal, making it particularly suitable for electromagnetic sensors.

  10. Selective and low temperature synthesis of polycrystalline diamond

    NASA Technical Reports Server (NTRS)

    Ramesham, R.; Roppel, T.; Ellis, C.; Baugh, W.; Jaworske, D. A.

    1991-01-01

    Polycrystalline diamond thin films have been deposited on single-crystal silicon substrates at low temperatures (not above 600 C) using a mixture of hydrogen and methane gases by high-pressure microwave plasma-assisted chemical vapor deposition. Low-temperature deposition has been achieved by cooling the substrate holder with nitrogen gas. For deposition at reduced substrate temperature, it has been found that nucleation of diamond will not occur unless the methane/hydrogen ratio is increased significantly from its value at higher substrate temperature. Selective deposition of polycrystalline diamond thin films has been achieved at 600 C. Decrease in the diamond particle size and growth rate and an increase in surface smoothness have been observed with decreasing substrate temperature during the growth of thin films. As-deposited films are identified by Raman spectroscopy, and the morphology is analyzed by scanning electron microscopy.

  11. High Performance Perovskite Solar Cells.

    PubMed

    Tong, Xin; Lin, Feng; Wu, Jiang; Wang, Zhiming M

    2016-05-01

    Perovskite solar cells fabricated from organometal halide light harvesters have captured significant attention due to their tremendously low device costs as well as unprecedented rapid progress on power conversion efficiency (PCE). A certified PCE of 20.1% was achieved in late 2014 following the first study of long-term stable all-solid-state perovskite solar cell with a PCE of 9.7% in 2012, showing their promising potential towards future cost-effective and high performance solar cells. Here, notable achievements of primary device configuration involving perovskite layer, hole-transporting materials (HTMs) and electron-transporting materials (ETMs) are reviewed. Numerous strategies for enhancing photovoltaic parameters of perovskite solar cells, including morphology and crystallization control of perovskite layer, HTMs design and ETMs modifications are discussed in detail. In addition, perovskite solar cells outside of HTMs and ETMs are mentioned as well, providing guidelines for further simplification of device processing and hence cost reduction.

  12. High Performance Perovskite Solar Cells

    PubMed Central

    Tong, Xin; Lin, Feng; Wu, Jiang

    2015-01-01

    Perovskite solar cells fabricated from organometal halide light harvesters have captured significant attention due to their tremendously low device costs as well as unprecedented rapid progress on power conversion efficiency (PCE). A certified PCE of 20.1% was achieved in late 2014 following the first study of long‐term stable all‐solid‐state perovskite solar cell with a PCE of 9.7% in 2012, showing their promising potential towards future cost‐effective and high performance solar cells. Here, notable achievements of primary device configuration involving perovskite layer, hole‐transporting materials (HTMs) and electron‐transporting materials (ETMs) are reviewed. Numerous strategies for enhancing photovoltaic parameters of perovskite solar cells, including morphology and crystallization control of perovskite layer, HTMs design and ETMs modifications are discussed in detail. In addition, perovskite solar cells outside of HTMs and ETMs are mentioned as well, providing guidelines for further simplification of device processing and hence cost reduction. PMID:27774402

  13. Toward high performance graphene fibers.

    PubMed

    Chen, Li; He, Yuling; Chai, Songgang; Qiang, Hong; Chen, Feng; Fu, Qiang

    2013-07-07

    Two-dimensional graphene and graphene-based materials have attracted tremendous interest, hence much attention has been drawn to exploring and applying their exceptional characteristics and properties. Integration of graphene sheets into macroscopic fibers is a very important way for their application and has received increasing interest. In this study, neat and macroscopic graphene fibers were continuously spun from graphene oxide (GO) suspensions followed by chemical reduction. By varying wet-spinning conditions, a series of graphene fibers were prepared, then, the structural features, mechanical and electrical performances of the fibers were investigated. We found the orientation of graphene sheets, the interaction between inter-fiber graphene sheets and the defects in the fibers have a pronounced effect on the properties of the fibers. Graphene fibers with excellent mechanical and electrical properties will yield great advances in high-tech applications. These findings provide guidance for the future production of high performance graphene fibers.

  14. High Performance Flexible Thermal Link

    NASA Astrophysics Data System (ADS)

    Sauer, Arne; Preller, Fabian

    2014-06-01

    The paper deals with the design and performance verification of a high performance and flexible carbon fibre thermal link.Project goal was to design a space qualified thermal link combining low mass, flexibility and high thermal conductivity with new approaches regarding selected materials and processes. The idea was to combine the advantages of existing metallic links regarding flexibility and the thermal performance of high conductive carbon pitch fibres. Special focus is laid on the thermal performance improvement of matrix systems by means of nano-scaled carbon materials in order to improve the thermal performance also perpendicular to the direction of the unidirectional fibres.One of the main challenges was to establish a manufacturing process which allows handling the stiff and brittle fibres, applying the matrix and performing the implementation into an interface component using unconventional process steps like thermal bonding of fibres after metallisation.This research was funded by the German Federal Ministry for Economic Affairs and Energy (BMWi).

  15. High Performance Proactive Digital Forensics

    NASA Astrophysics Data System (ADS)

    Alharbi, Soltan; Moa, Belaid; Weber-Jahnke, Jens; Traore, Issa

    2012-10-01

    With the increase in the number of digital crimes and in their sophistication, High Performance Computing (HPC) is becoming a must in Digital Forensics (DF). According to the FBI annual report, the size of data processed during the 2010 fiscal year reached 3,086 TB (compared to 2,334 TB in 2009) and the number of agencies that requested Regional Computer Forensics Laboratory assistance increasing from 689 in 2009 to 722 in 2010. Since most investigation tools are both I/O and CPU bound, the next-generation DF tools are required to be distributed and offer HPC capabilities. The need for HPC is even more evident in investigating crimes on clouds or when proactive DF analysis and on-site investigation, requiring semi-real time processing, are performed. Although overcoming the performance challenge is a major goal in DF, as far as we know, there is almost no research on HPC-DF except for few papers. As such, in this work, we extend our work on the need of a proactive system and present a high performance automated proactive digital forensic system. The most expensive phase of the system, namely proactive analysis and detection, uses a parallel extension of the iterative z algorithm. It also implements new parallel information-based outlier detection algorithms to proactively and forensically handle suspicious activities. To analyse a large number of targets and events and continuously do so (to capture the dynamics of the system), we rely on a multi-resolution approach to explore the digital forensic space. Data set from the Honeynet Forensic Challenge in 2001 is used to evaluate the system from DF and HPC perspectives.

  16. High Performance Parallel Computational Nanotechnology

    NASA Technical Reports Server (NTRS)

    Saini, Subhash; Craw, James M. (Technical Monitor)

    1995-01-01

    At a recent press conference, NASA Administrator Dan Goldin encouraged NASA Ames Research Center to take a lead role in promoting research and development of advanced, high-performance computer technology, including nanotechnology. Manufacturers of leading-edge microprocessors currently perform large-scale simulations in the design and verification of semiconductor devices and microprocessors. Recently, the need for this intensive simulation and modeling analysis has greatly increased, due in part to the ever-increasing complexity of these devices, as well as the lessons of experiences such as the Pentium fiasco. Simulation, modeling, testing, and validation will be even more important for designing molecular computers because of the complex specification of millions of atoms, thousands of assembly steps, as well as the simulation and modeling needed to ensure reliable, robust and efficient fabrication of the molecular devices. The software for this capacity does not exist today, but it can be extrapolated from the software currently used in molecular modeling for other applications: semi-empirical methods, ab initio methods, self-consistent field methods, Hartree-Fock methods, molecular mechanics; and simulation methods for diamondoid structures. In as much as it seems clear that the application of such methods in nanotechnology will require powerful, highly powerful systems, this talk will discuss techniques and issues for performing these types of computations on parallel systems. We will describe system design issues (memory, I/O, mass storage, operating system requirements, special user interface issues, interconnects, bandwidths, and programming languages) involved in parallel methods for scalable classical, semiclassical, quantum, molecular mechanics, and continuum models; molecular nanotechnology computer-aided designs (NanoCAD) techniques; visualization using virtual reality techniques of structural models and assembly sequences; software required to

  17. Towards high performance inverted polymer solar cells

    NASA Astrophysics Data System (ADS)

    Gong, Xiong

    2013-03-01

    Bulk heterojunction polymer solar cells that can be fabricated by solution processing techniques are under intense investigation in both academic institutions and industrial companies because of their potential to enable mass production of flexible and cost-effective alternative to silicon-based electronics. Despite the envisioned advantages and recent technology advances, so far the performance of polymer solar cells is still inferior to inorganic counterparts in terms of the efficiency and stability. There are many factors limiting the performance of polymer solar cells. Among them, the optical and electronic properties of materials in the active layer, device architecture and elimination of PEDOT:PSS are the most determining factors in the overall performance of polymer solar cells. In this presentation, I will present how we approach high performance of polymer solar cells. For example, by developing novel materials, fabrication polymer photovoltaic cells with an inverted device structure and elimination of PEDOT:PSS, we were able to observe over 8.4% power conversion efficiency from inverted polymer solar cells.

  18. Hopping conduction in polycrystalline semiconductors

    NASA Astrophysics Data System (ADS)

    Sharma, R. P.; Shukla, A. K.; Kapoor, A. K.; Srivastava, R.; Mathur, P. C.

    1985-03-01

    Measurements of dc conductivity (sigma) on polycrystalline semiconductors, viz., InSb, Si, and CdTe, have been reported in the temperature range 77-300 K. The conduction mechanism near liquid-nitrogen temperature has been identified as the hopping of charge carriers from the charged trap centers to empty traps near the Fermi level.

  19. Silicon on ceramic process. Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

    NASA Technical Reports Server (NTRS)

    Zook, J. D.; Heaps, J. D.; Maciolek, R. B.; Koepke, B. G.; Butter, C. D.; Schuldt, S. B.

    1977-01-01

    The technical and economic feasibility of producing solar-cell-quality sheet silicon was investigated. The sheets were made by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Significant progress was made in all areas of the program.

  20. Back contacts for silicon-on-ceramic solar cells

    NASA Technical Reports Server (NTRS)

    Schuller, T. L.; Marquardt, S.

    1981-01-01

    Grooved substrate exposes back surface of photovoltaic cells, allowing dopant diffusion into surface and electrical contact. When substrate is coated successively with carbon and molten silicon, polycrystalline-silicon bridges form over grooves, but leave channels open. Best adhesion results when substrate grooves run perpendicular to direction of liquid-silicon layer and are closely spaced.

  1. High performance aerated lagoon systems

    SciTech Connect

    Rich, L.

    1999-08-01

    At a time when less money is available for wastewater treatment facilities and there is increased competition for the local tax dollar, regulatory agencies are enforcing stricter effluent limits on treatment discharges. A solution for both municipalities and industry is to use aerated lagoon systems designed to meet these limits. This monograph, prepared by a recognized expert in the field, provides methods for the rational design of a wide variety of high-performance aerated lagoon systems. Such systems range from those that can be depended upon to meet secondary treatment standards alone to those that, with the inclusion of intermittent sand filters or elements of sequenced biological reactor (SBR) technology, can also provide for nitrification and nutrient removal. Considerable emphasis is placed on the use of appropriate performance parameters, and an entire chapter is devoted to diagnosing performance failures. Contents include: principles of microbiological processes, control of algae, benthal stabilization, design for CBOD removal, design for nitrification and denitrification in suspended-growth systems, design for nitrification in attached-growth systems, phosphorus removal, diagnosing performance.

  2. High performance Cu adhesion coating

    SciTech Connect

    Lee, K.W.; Viehbeck, A.; Chen, W.R.; Ree, M.

    1996-12-31

    Poly(arylene ether benzimidazole) (PAEBI) is a high performance thermoplastic polymer with imidazole functional groups forming the polymer backbone structure. It is proposed that upon coating PAEBI onto a copper surface the imidazole groups of PAEBI form a bond with or chelate to the copper surface resulting in strong adhesion between the copper and polymer. Adhesion of PAEBI to other polymers such as poly(biphenyl dianhydride-p-phenylene diamine) (BPDA-PDA) polyimide is also quite good and stable. The resulting locus of failure as studied by XPS and IR indicates that PAEBI gives strong cohesive adhesion to copper. Due to its good adhesion and mechanical properties, PAEBI can be used in fabricating thin film semiconductor packages such as multichip module dielectric (MCM-D) structures. In these applications, a thin PAEBI coating is applied directly to a wiring layer for enhancing adhesion to both the copper wiring and the polymer dielectric surface. In addition, a thin layer of PAEBI can also function as a protection layer for the copper wiring, eliminating the need for Cr or Ni barrier metallurgies and thus significantly reducing the number of process steps.

  3. ALMA high performance nutating subreflector

    NASA Astrophysics Data System (ADS)

    Gasho, Victor L.; Radford, Simon J. E.; Kingsley, Jeffrey S.

    2003-02-01

    For the international ALMA project"s prototype antennas, we have developed a high performance, reactionless nutating subreflector (chopping secondary mirror). This single axis mechanism can switch the antenna"s optical axis by +/-1.5" within 10 ms or +/-5" within 20 ms and maintains pointing stability within the antenna"s 0.6" error budget. The light weight 75 cm diameter subreflector is made of carbon fiber composite to achieve a low moment of inertia, <0.25 kg m2. Its reflecting surface was formed in a compression mold. Carbon fiber is also used together with Invar in the supporting structure for thermal stability. Both the subreflector and the moving coil motors are mounted on flex pivots and the motor magnets counter rotate to absorb the nutation reaction force. Auxiliary motors provide active damping of external disturbances, such as wind gusts. Non contacting optical sensors measure the positions of the subreflector and the motor rocker. The principle mechanical resonance around 20 Hz is compensated with a digital PID servo loop that provides a closed loop bandwidth near 100 Hz. Shaped transitions are used to avoid overstressing mechanical links.

  4. The High Performance Storage System

    SciTech Connect

    Coyne, R.A.; Hulen, H.; Watson, R.

    1993-09-01

    The National Storage Laboratory (NSL) was organized to develop, demonstrate and commercialize technology for the storage system that will be the future repositories for our national information assets. Within the NSL four Department of Energy laboratories and IBM Federal System Company have pooled their resources to develop an entirely new High Performance Storage System (HPSS). The HPSS project concentrates on scalable parallel storage system for highly parallel computers as well as traditional supercomputers and workstation clusters. Concentrating on meeting the high end of storage system and data management requirements, HPSS is designed using network-connected storage devices to transfer data at rates of 100 million bytes per second and beyond. The resulting products will be portable to many vendor`s platforms. The three year project is targeted to be complete in 1995. This paper provides an overview of the requirements, design issues, and architecture of HPSS, as well as a description of the distributed, multi-organization industry and national laboratory HPSS project.

  5. Eye-Safe Polycrystalline Lasers

    DTIC Science & Technology

    2013-03-01

    examination the fiber ends were mechanically polished with 600 grit silicon carbide ( SiC ) bonded paper. Un-coated samples were investigated using a...JCPDS card no.42-1463). The sintered samples were mechanically polished using 600, 800, and 1200 grit silicon carbide papers. Final polishing was...were mechanically polished using 600, 800, and 1200 grit silicon carbide papers. Final polishing was performed with colloidal silica suspension. The

  6. Fracture toughness of silicon

    NASA Technical Reports Server (NTRS)

    Chen, C. P.; Leipold, M. H.

    1980-01-01

    The paper presents a study to determine the fracture toughness and to characterize fracture modes of silicon as a function of the orientation of single-crystal and polycrystalline material. It is shown that bar specimens cracked by Knoop microhardness indentation and tested to fracture under four-point bending at room temperature were used to determine the fracture toughness values. It is found that the lowest fracture toughness value of single crystal silicon was 0.82 MN/m to the 3/2 in the 111 plane type orientation, although the difference in values in the 111, 110, and 100 planes was small.

  7. Directed vapor deposition of amorphous and polycrystalline electronic materials: Nonhydrogenated a-Si

    SciTech Connect

    Groves, J.F.; Jones, S.H.; Globus, T.; Hsiung, L.M.; Wadley, H.

    1995-10-01

    A novel directed vapor deposition (DVD) process for creating amorphous and polycrystalline electronic materials is reported. Initial experimental results for DVD of nonhydrogenated a-Si indicate that growth rates at least between 0.02 and 1.0 {micro}m/min can be achieved. In this process, evaporated silicon is efficiently entrained in a previously formed low pressure supersonic He jet. The silicon is evaporated using a high energy, high voltage, electron beam. The collimated jet of He entrained with silicon is used to deposit thin films of a-Si at room temperature on glass substrates. Initial TEM microstructure analysis and optical absorption analysis is presented.

  8. Indoor Air Quality in High Performance Schools

    EPA Pesticide Factsheets

    High performance schools are facilities that improve the learning environment while saving energy, resources, and money. The key is understanding the lifetime value of high performance schools and effectively managing priorities, time, and budget.

  9. Carpet Aids Learning in High Performance Schools

    ERIC Educational Resources Information Center

    Hurd, Frank

    2009-01-01

    The Healthy and High Performance Schools Act of 2002 has set specific federal guidelines for school design, and developed a federal/state partnership program to assist local districts in their school planning. According to the Collaborative for High Performance Schools (CHPS), high-performance schools are, among other things, healthy, comfortable,…

  10. Transmutation doping of silicon solar cells

    NASA Technical Reports Server (NTRS)

    Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

    1977-01-01

    Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

  11. Micromachined high-performance RF passives in CMOS substrate

    NASA Astrophysics Data System (ADS)

    Li, Xinxin; Ni, Zao; Gu, Lei; Wu, Zhengzheng; Yang, Chen

    2016-11-01

    This review systematically addresses the micromachining technologies used for the fabrication of high-performance radio-frequency (RF) passives that can be integrated into low-cost complementary metal-oxide semiconductor (CMOS)-grade (i.e. low-resistivity) silicon wafers. With the development of various kinds of post-CMOS-compatible microelectromechanical systems (MEMS) processes, 3D structural inductors/transformers, variable capacitors, tunable resonators and band-pass/low-pass filters can be compatibly integrated into active integrated circuits to form monolithic RF system-on-chips. By using MEMS processes, including substrate modifying/suspending and LIGA-like metal electroplating, both the highly lossy substrate effect and the resistive loss can be largely eliminated and depressed, thereby meeting the high-performance requirements of telecommunication applications.

  12. Statistical properties of high performance cesium standards

    NASA Technical Reports Server (NTRS)

    Percival, D. B.

    1973-01-01

    The intermediate term frequency stability of a group of new high-performance cesium beam tubes at the U.S. Naval Observatory were analyzed from two viewpoints: (1) by comparison of the high-performance standards to the MEAN(USNO) time scale and (2) by intercomparisons among the standards themselves. For sampling times up to 5 days, the frequency stability of the high-performance units shows significant improvement over older commercial cesium beam standards.

  13. Fracture behaviour of polycrystalline tungsten

    NASA Astrophysics Data System (ADS)

    Gaganidze, Ermile; Rupp, Daniel; Aktaa, Jarir

    2014-03-01

    Fracture behaviour of round blank polycrystalline tungsten was studied by means of three point bending Fracture-Mechanical (FM) tests at temperatures between RT and 1000 °C and under high vacuum. To study the influence of the anisotropic microstructure on the fracture toughness (FT) and ductile-to-brittle transition (DBT) the specimens were extracted in three different, i.e. longitudinal, radial and circumferential orientations. The FM tests yielded distinctive fracture behaviour for each specimen orientation. The crack propagation was predominantly intergranular for longitudinal orientation up to 600 °C, whereas transgranular cleavage was observed at low test temperatures for radial and circumferentially oriented specimens. At intermediate test temperatures the change of the fracture mode took place for radial and circumferential orientations. Above 800 °C all three specimen types showed large ductile deformation without noticeable crack advancement. For longitudinal specimens the influence of the loading rate on the FT and DBT was studied in the loading rate range between 0.06 and 18 MPa m1/2/s. Though an increase of the FT was observed for the lowest loading rate, no resolvable dependence of the DBT on the loading rate was found partly due to loss of FT validity. A Master Curve approach is proposed to describe FT vs. test temperature data on polycrystalline tungsten. Fracture safe design space was identified by analysis compiled FT data.

  14. Method of making a high performance ultracapacitor

    DOEpatents

    Farahmandi, C. Joseph; Dispennette, John M.

    2000-07-26

    A high performance double layer capacitor having an electric double layer formed in the interface between activated carbon and an electrolyte is disclosed. The high performance double layer capacitor includes a pair of aluminum impregnated carbon composite electrodes having an evenly distributed and continuous path of aluminum impregnated within an activated carbon fiber preform saturated with a high performance electrolytic solution. The high performance double layer capacitor is capable of delivering at least 5 Wh/kg of useful energy at power ratings of at least 600 W/kg.

  15. High performance carbon nanocomposites for ultracapacitors

    DOEpatents

    Lu, Wen

    2012-10-02

    The present invention relates to composite electrodes for electrochemical devices, particularly to carbon nanotube composite electrodes for high performance electrochemical devices, such as ultracapacitors.

  16. High-performance thick copper inductors in an RF technology

    NASA Astrophysics Data System (ADS)

    Vaed, Kunal; Graham, William; Steen, Michelle; Park, Jae-Eun; Groves, Robert; Volant, Richard; Nunes, Ronald; Vichiconti, James; Stein, Kenneth; Ahlgren, David

    2004-01-01

    With the emergence of wired and wireless communication technologies, on-chip inductors find applications in a variety of high performance radio frequency (RF) circuits. In this work, we present two approaches for high-performance copper inductors in an RF technology. In the first approach (Type I), we lower ohmic losses to realize a high Q-factor. This is achieved by using, for the first time in a manufacturable technology, 4 μm thick copper spirals along with a 4 μm thick copper underpass on high-resistivity substrates (75 Ω-cm). The underpass is connected to the spirals with a 4 μm tall copper via, which lowers spiral to underpass capacitance. For further lowering the capacitive losses, an additional 6.1 μm thick interlayer dielectric separates the underpass from the substrate. In the second approach (Type II), we utilize a novel one-mask CMOS-compatible micromachining scheme to eliminate substrate losses. This is achieved by completely removing the silicon substrate from directly below the inductors. For a 1.1nH inductor, peak-Q shows an impressive two-fold improvement from 26.6 at 3.8 GHz for Type I inductor to 52.8 at 8.2 GHz for Type II inductor after silicon micromachining. The resonant frequency increases from 18 GHz to 27 GHz after substrate micromachining.

  17. High Performance Work Practices and Firm Performance.

    ERIC Educational Resources Information Center

    Department of Labor, Washington, DC. Office of the American Workplace.

    A literature survey established that a substantial amount of research has been conducted on the relationship between productivity and the following specific high performance work practices: employee involvement in decision making, compensation linked to firm or worker performance, and training. According to these studies, high performance work…

  18. High Performance Work Systems and Firm Performance.

    ERIC Educational Resources Information Center

    Kling, Jeffrey

    1995-01-01

    A review of 17 studies of high-performance work systems concludes that benefits of employee involvement, skill training, and other high-performance work practices tend to be greater when new methods are adopted as part of a consistent whole. (Author)

  19. Sustaining High Performance in Bad Times.

    ERIC Educational Resources Information Center

    Bassi, Laurie J.; Van Buren, Mark A.

    1997-01-01

    Summarizes the results of the American Society for Training and Development Human Resource and Performance Management Survey of 1996 that examined the performance outcomes of downsizing and high performance work systems, explored the relationship between high performance work systems and downsizing, and asked whether some downsizing practices were…

  20. Common Factors of High Performance Teams

    ERIC Educational Resources Information Center

    Jackson, Bruce; Madsen, Susan R.

    2005-01-01

    Utilization of work teams is now wide spread in all types of organizations throughout the world. However, an understanding of the important factors common to high performance teams is rare. The purpose of this content analysis is to explore the literature and propose findings related to high performance teams. These include definition and types,…

  1. Can We Build a Truly High Performance Computer Which is Flexible and Transparent?

    PubMed Central

    Rojas, Jhonathan P.; Torres Sevilla, Galo A.; Hussain, Muhammad M.

    2013-01-01

    State-of-the art computers need high performance transistors, which consume ultra-low power resulting in longer battery lifetime. Billions of transistors are integrated neatly using matured silicon fabrication process to maintain the performance per cost advantage. In that context, low-cost mono-crystalline bulk silicon (100) based high performance transistors are considered as the heart of today's computers. One limitation is silicon's rigidity and brittleness. Here we show a generic batch process to convert high performance silicon electronics into flexible and semi-transparent one while retaining its performance, process compatibility, integration density and cost. We demonstrate high-k/metal gate stack based p-type metal oxide semiconductor field effect transistors on 4 inch silicon fabric released from bulk silicon (100) wafers with sub-threshold swing of 80 mV dec−1 and on/off ratio of near 104 within 10% device uniformity with a minimum bending radius of 5 mm and an average transmittance of ~7% in the visible spectrum. PMID:24018904

  2. New high performance Si for optical devices

    NASA Astrophysics Data System (ADS)

    Tenma, T.; Matsuzaka, M.; Sako, R.; Takase, K.; Chiba, K.

    2016-05-01

    Against the backdrop of a growing demand in the areas of smart buildings, security, vehicle installation, and other applications, the market for far infrared cameras is expected to grow significantly in the future. However, since germanium (Ge) and chalcogenide glass, which have been used as the lens materials of far infrared cameras, are very expensive or highly toxic, there are some problems supporting the growing demand. We have therefore focused attention on silicon, which is inexpensive and less toxic. Although silicon has been used as a lens material of far infrared cameras, there are some problems remaining to be solved: Cz silicon is inexpensive but delivers low transmittance, and Fz silicon delivers sufficient transmittance but is expensive. We have developed New Cz silicon, which delivers high transmittance as Fz silicon does, and is inexpensive as conventional Cz silicon is. We have already started its sample work at both companies in Japan and overseas and have obtained excellent performance results. Mass production is scheduled to start in this fiscal year.

  3. Polishing of polycrystalline diamond films

    NASA Astrophysics Data System (ADS)

    Harker, Alan B.; Flintoff, John F.; DeNatale, Jeffrey F.

    1990-12-01

    Optically smooth surfaces can be produced on initially rough polycrystalline diamond film through the combined use of reactive ion etching and high temperature lapping on Fe metai Protective thin film barriers are first applied to the diamond surface to restrict the reactiv oxygen or hydrogen ion etching process to regions of greatest roughness. When the overaJ surface roughness has been reduced sufficiently by etching mechanical lapping of the surfac on an Fe plate at temperatures of 730C-900C in the presence of hydrogen can be used t produce surface roughnesses of less than 10 nm as measured by profilimetry. The tw techniques are complementary for flat surfaces while the reactive etching process alone can b used with shaped substrates to produce a surface finish suitable for LWIR optical applications. 1.

  4. Shock waves in polycrystalline iron.

    PubMed

    Kadau, Kai; Germann, Timothy C; Lomdahl, Peter S; Albers, Robert C; Wark, Justin S; Higginbotham, Andrew; Holian, Brad Lee

    2007-03-30

    The propagation of shock waves through polycrystalline iron is explored by large-scale atomistic simulations. For large enough shock strengths the passage of the wave causes the body-centered-cubic phase to transform into a close-packed phase with most structure being isotropic hexagonal-close-packed (hcp) and, depending on shock strength and grain orientation, some fraction of face-centered-cubic (fcc) structure. The simulated shock Hugoniot is compared to experiments. By calculating the extended x-ray absorption fine structure (EXAFS) directly from the atomic configurations, a comparison to experimental EXAFS measurements of nanosecond-laser shocks shows that the experimental data is consistent with such a phase transformation. However, the atomistically simulated EXAFS spectra also show that an experimental distinction between the hcp or fcc phase is not possible based on the spectra alone.

  5. Interface scattering in polycrystalline thermoelectrics

    SciTech Connect

    Popescu, Adrian; Haney, Paul M.

    2014-03-28

    We study the effect of electron and phonon interface scattering on the thermoelectric properties of disordered, polycrystalline materials (with grain sizes larger than electron and phonons' mean free path). Interface scattering of electrons is treated with a Landauer approach, while that of phonons is treated with the diffuse mismatch model. The interface scattering is embedded within a diffusive model of bulk transport, and we show that, for randomly arranged interfaces, the overall system is well described by effective medium theory. Using bulk parameters similar to those of PbTe and a square barrier potential for the interface electron scattering, we identify the interface scattering parameters for which the figure of merit ZT is increased. We find the electronic scattering is generally detrimental due to a reduction in electrical conductivity; however, for sufficiently weak electronic interface scattering, ZT is enhanced due to phonon interface scattering.

  6. A technique for local area transfer and simultaneous crystallization of amorphous silicon layer with midair cavity by irradiation with near-infrared semiconductor diode laser

    NASA Astrophysics Data System (ADS)

    Sakaike, Kohei; Kobayashi, Yoshitaka; Nakamura, Shogo; Akazawa, Muneki; Higashi, Seiichiro

    2014-04-01

    A technique for local layer transfer and simultaneous crystallization of amorphous silicon (a-Si) films with midair cavity induced by near-infrared semiconductor diode laser (SDL) irradiation is demonstrated. After SDL irradiation, the silicon (Si) films were completely transferred and crystallized simultaneously on counter substrates. Electron backscatter diffraction pattern maps confirmed that the maximum grain size of the transferred Si films is 20 µm. High-performance polycrystalline Si thin-film transistors (TFTs) were successfully fabricated on the locally transferred Si films. These TFTs showed a high on/off ratio of more than 106 and a field-effect mobility as high as 492 cm2 V-1 s-1.

  7. Strategy Guideline: High Performance Residential Lighting

    SciTech Connect

    Holton, J.

    2012-02-01

    The Strategy Guideline: High Performance Residential Lighting has been developed to provide a tool for the understanding and application of high performance lighting in the home. The high performance lighting strategies featured in this guide are drawn from recent advances in commercial lighting for application to typical spaces found in residential buildings. This guide offers strategies to greatly reduce lighting energy use through the application of high quality fluorescent and light emitting diode (LED) technologies. It is important to note that these strategies not only save energy in the home but also serve to satisfy the homeowner's expectations for high quality lighting.

  8. Polycrystalline lead selenide: the resurgence of an old infrared detector

    NASA Astrophysics Data System (ADS)

    Vergara, G.; Montojo, M. T.; Torquemada, M. C.; Rodrigo, M. T.; Sánchez, F. J.; Gómez, L. J.; Almazán, R. M.; Verdú, M.; Rodríguez, P.; Villamayor, V.; Álvarez, M.; Diezhandino, J.; Plaza, J.; Catalán, I.

    2007-06-01

    The existing technology for uncooled MWIR photon detectors based on polycrystalline lead salts is stigmatized for being a 50-year-old technology. It has been traditionally relegated to single-element detectors and relatively small linear arrays due to the limitations imposed by its standard manufacture process based on a chemical bath deposition technique (CBD) developed more than 40 years ago. Recently, an innovative method for processing detectors, based on a vapour phase deposition (VPD) technique, has allowed manufacturing the first 2D array of polycrystalline PbSe with good electro optical characteristics. The new method of processing PbSe is an all silicon technology and it is compatible with standard CMOS circuitry. In addition to its affordability, VPD PbSe constitutes a perfect candidate to fill the existing gap in the photonic and uncooled IR imaging detectors sensitive to the MWIR photons. The perspectives opened are numerous and very important, converting the old PbSe detector in a serious alternative to others uncooled technologies in the low cost IR detection market. The number of potential applications is huge, some of them with high commercial impact such as personal IR imagers, enhanced vision systems for automotive applications and other not less important in the security/defence domain such as sensors for active protection systems (APS) or low cost seekers. Despite the fact, unanimously accepted, that uncooled will dominate the majority of the future IR detection applications, today, thermal detectors are the unique plausible alternative. There is plenty of room for photonic uncooled and complementary alternatives are needed. This work allocates polycrystalline PbSe in the current panorama of the uncooled IR detectors, underlining its potentiality in two areas of interest, i.e., very low cost imaging IR detectors and MWIR fast uncooled detectors for security and defence applications. The new method of processing again converts PbSe into an

  9. Conductive polycrystalline diamond probes for local anodic oxidation lithography

    NASA Astrophysics Data System (ADS)

    Ulrich, A. J.; Radadia, A. D.

    2015-11-01

    This is the first report characterizing local anodic oxidation (LAO) lithography performed using conductive monolithic polycrystalline diamond (MD) and conductive polycrystalline diamond-coated (DC) tips and comparing it to the diamond-like carbon-coated and metal-coated silicon tips. The range and the rate of increase in the lithographic linewidth and height with tip bias (dw/dV and dh/dV) differed based on the tip material. The DC tips resulted in wider and taller lines and a higher dw/dV and dh/dV compared to metal-coated tips with a similar force constant (k Avg). The metal-coated and the DC tips with comparable k Avg showed comparable threshold voltages, whereas the MD tips with similar k Avg showed a higher threshold voltage. The MD tips exhibited less than half the height and nearly half the dw/dV and dh/dV obtained with the metal-coated tips with similar k Avg, thus also resulting in a smaller width at -10 V. The linewidths were found to be proportional to the inverse of the log of write speed (v) for all the tips; however, the proportionality constant varied with tip material; the DC tips had larger values, and the MD and the metal-coated tips had comparable values. When varying the speed, the height was found to be a sigmoidal function of width, with the MD probes achieving lower height compared to the metal-coated and the DC tips with comparable k Avg. This study expands the application of monolithic conductive polycrystalline diamond (PCD) probes with outstanding wear resistance to fine LAO lithography.

  10. Conductive polycrystalline diamond probes for local anodic oxidation lithography.

    PubMed

    Ulrich, A J; Radadia, A D

    2015-11-20

    This is the first report characterizing local anodic oxidation (LAO) lithography performed using conductive monolithic polycrystalline diamond (MD) and conductive polycrystalline diamond-coated (DC) tips and comparing it to the diamond-like carbon-coated and metal-coated silicon tips. The range and the rate of increase in the lithographic linewidth and height with tip bias (dw/dV and dh/dV) differed based on the tip material. The DC tips resulted in wider and taller lines and a higher dw/dV and dh/dV compared to metal-coated tips with a similar force constant (k(Avg)). The metal-coated and the DC tips with comparable k(Avg) showed comparable threshold voltages, whereas the MD tips with similar k(Avg) showed a higher threshold voltage. The MD tips exhibited less than half the height and nearly half the dw/dV and dh/dV obtained with the metal-coated tips with similar k Avg, thus also resulting in a smaller width at -10 V. The linewidths were found to be proportional to the inverse of the log of write speed(v) for all the tips; however, the proportionality constant varied with tip material; the DC tips had larger values, and the MD and the metal-coated tips had comparable values. When varying the speed, the height was found to be a sigmoidal function of width, with the MD probes achieving lower height compared to the metal-coated and the DC tips with comparable k(Avg). This study expands the application of monolithic conductive polycrystalline diamond (PCD) probes with outstanding wear resistance to fine LAO lithography.

  11. Rapidly Reconfigurable High Performance Computing Cluster

    DTIC Science & Technology

    2005-07-01

    1 SECTION 2 BACKGROUN D AN D OBJECTIVES ......................................................................... 2 2.1 H...igh Perform ance Com puting Trends ................................................................................ 2 2.2 Georgia Tech Activity in H PEC

  12. Terbium Ion Doping in Ca3Co4O9: A Step towards High-Performance Thermoelectric Materials

    PubMed Central

    Saini, Shrikant; Yaddanapudi, Haritha Sree; Tian, Kun; Yin, Yinong; Magginetti, David; Tiwari, Ashutosh

    2017-01-01

    The potential of thermoelectric materials to generate electricity from the waste heat can play a key role in achieving a global sustainable energy future. In order to proceed in this direction, it is essential to have thermoelectric materials that are environmentally friendly and exhibit high figure of merit, ZT. Oxide thermoelectric materials are considered ideal for such applications. High thermoelectric performance has been reported in single crystals of Ca3Co4O9. However, for large scale applications single crystals are not suitable and it is essential to develop high-performance polycrystalline thermoelectric materials. In polycrystalline form, Ca3Co4O9 is known to exhibit much weaker thermoelectric response than in single crystal form. Here, we report the observation of enhanced thermoelectric response in polycrystalline Ca3Co4O9 on doping Tb ions in the material. Polycrystalline Ca3−xTbxCo4O9 (x = 0.0–0.7) samples were prepared by a solid-state reaction technique. Samples were thoroughly characterized using several state of the art techniques including XRD, TEM, SEM and XPS. Temperature dependent Seebeck coefficient, electrical resistivity and thermal conductivity measurements were performed. A record ZT of 0.74 at 800 K was observed for Tb doped Ca3Co4O9 which is the highest value observed till date in any polycrystalline sample of this system. PMID:28317853

  13. Terbium Ion Doping in Ca3Co4O9: A Step towards High-Performance Thermoelectric Materials

    NASA Astrophysics Data System (ADS)

    Saini, Shrikant; Yaddanapudi, Haritha Sree; Tian, Kun; Yin, Yinong; Magginetti, David; Tiwari, Ashutosh

    2017-03-01

    The potential of thermoelectric materials to generate electricity from the waste heat can play a key role in achieving a global sustainable energy future. In order to proceed in this direction, it is essential to have thermoelectric materials that are environmentally friendly and exhibit high figure of merit, ZT. Oxide thermoelectric materials are considered ideal for such applications. High thermoelectric performance has been reported in single crystals of Ca3Co4O9. However, for large scale applications single crystals are not suitable and it is essential to develop high-performance polycrystalline thermoelectric materials. In polycrystalline form, Ca3Co4O9 is known to exhibit much weaker thermoelectric response than in single crystal form. Here, we report the observation of enhanced thermoelectric response in polycrystalline Ca3Co4O9 on doping Tb ions in the material. Polycrystalline Ca3‑xTbxCo4O9 (x = 0.0–0.7) samples were prepared by a solid-state reaction technique. Samples were thoroughly characterized using several state of the art techniques including XRD, TEM, SEM and XPS. Temperature dependent Seebeck coefficient, electrical resistivity and thermal conductivity measurements were performed. A record ZT of 0.74 at 800 K was observed for Tb doped Ca3Co4O9 which is the highest value observed till date in any polycrystalline sample of this system.

  14. LANL High-Performance Data System (HPDS)

    NASA Technical Reports Server (NTRS)

    Collins, M. William; Cook, Danny; Jones, Lynn; Kluegel, Lynn; Ramsey, Cheryl

    1993-01-01

    The Los Alamos High-Performance Data System (HPDS) is being developed to meet the very large data storage and data handling requirements of a high-performance computing environment. The HPDS will consist of fast, large-capacity storage devices that are directly connected to a high-speed network and managed by software distributed in workstations. The HPDS model, the HPDS implementation approach, and experiences with a prototype disk array storage system are presented.

  15. Architecture Analysis of High Performance Capacitors (POSTPRINT)

    DTIC Science & Technology

    2009-07-01

    includes the measurement of heat dissipated from a recently developed fluorenyl polyester (FPE) capacitor under an AC excitation. II. Capacitor ...AFRL-RZ-WP-TP-2010-2100 ARCHITECTURE ANALYSIS OF HIGH PERFORMANCE CAPACITORS (POSTPRINT) Hiroyuki Kosai and Tyler Bixel UES, Inc...2009 4. TITLE AND SUBTITLE ARCHITECTURE ANALYSIS OF HIGH PERFORMANCE CAPACITORS (POSTPRINT) 5a. CONTRACT NUMBER In-house 5b. GRANT NUMBER 5c

  16. Polycrystalline Thin-Film Photovoltaic Technologies: Progress and Technical Issues

    SciTech Connect

    Ullal, H. S.

    2004-08-01

    Polycrystalline thin-film materials based on copper indium diselenide (CuInSe2, CIS) and cadmium telluride (CdTe) are promising thin-film solar cells for various power and specialty applications. Impressive results have been obtained in the past few years for both thin-film copper indium gallium diselenide (CIGS) solar cells and thin-film CdTe solar cells. NCPV/NREL scientists have achieved world-record, total-area efficiencies of 19.3% for a thin-film CIGS solar cell and 16.5% for thin-film CdTe solar cell. A number of technical R&D issues related to CIS and CdTe have been identified. Thin-film power module efficiencies up to 13.4% has been achieved thus far. Tremendous progress has been made in the technology development for module fabrication, and multi-megawatt manufacturing facilities are coming on line with expansion plans in the next few years. Several 40-480 kW polycrystalline thin-film, grid-connected PV arrays have been deployed worldwide. Hot and humid testing is also under way to validate the long-term reliability of these emerging thin-film power products. The U.S. thin-film production (amorphous silicon[a-Si], CIS, CdTe) is expected to exceed 50 MW by the end of 2005.

  17. High purity silane and silicon production

    NASA Technical Reports Server (NTRS)

    Breneman, William C. (Inventor)

    1987-01-01

    Silicon tetrachloride, hydrogen and metallurgical silicon are reacted at about 400.degree.-600.degree. C. and at pressures in excess of 100 psi, and specifically from about 300 up to about 600 psi to form di- and trichlorosilane that is subjected to disproportionation in the presence of an anion exchange resin to form high purity silane. By-product and unreacted materials are recycled, with metallurgical silicon and hydrogen being essentially the only consumed feed materials. The silane product may be further purified, as by means of activated carbon or cryogenic distillation, and decomposed in a fluid bed or free space reactor to form high purity polycrystalline silicon and by-product hydrogen which can be recycled for further use. The process results in simplified waste disposal operations and enhances the overall conversion of metallurgical grade silicon to silane and high purity silicon for solar cell and semiconductor silicon applications.

  18. Silicon-Based Blue Light Emitting Diode

    DTIC Science & Technology

    1994-05-27

    dark layer on top is the ITO which does not thin as readily as the silicon underneath it. The ITO layer has remained electron-opaque in this particular...of an amorphous structure with Si nanocrystals embedded within it. Figure 6b shows a high magnification lattice image of the porous Si layer. The back...polycrystalline silicon materials by anodic etching and stain etching. Figure 7 shows the PL spectrum from a thin film of PPSI-on-quartz irradiated

  19. Si nanotubes and nanospheres with two-dimensional polycrystalline walls.

    PubMed

    Castrucci, Paola; Diociaiuti, Marco; Tank, Chiti Manohar; Casciardi, Stefano; Tombolini, Francesca; Scarselli, Manuela; De Crescenzi, Maurizio; Mathe, Vikas Laxman; Bhoraskar, Sudha Vasant

    2012-08-21

    We report on the characteristics of a new class of Si-based nanotubes and spherical nanoparticles synthesized by the dc-arc plasma method in a mixture of argon and hydrogen. These two nanostructures share common properties: they are hollow and possess very thin, highly polycrystalline and mainly oxidized walls. In particular, we get several hints indicating that their walls could constitute only one single Si oxidized layer. Moreover, we find that only the less oxidized nanotubes exhibit locally atomic ordered, snakeskin-like areas which possess a hexagonal arrangement which can be interpreted either as an sp(2) or sp(3) hybridized Si or Si-H layer. Their ability to not react with oxygen seems to suggest the presence of sp(2) configuration or the formation of silicon-hydrogen bonding.

  20. Polycrystalline configurations that maximize electrical resistivity

    NASA Astrophysics Data System (ADS)

    Nesi, Vincenzo; Milton, Graeme W.

    A lower bound on the effective conductivity tensor of polycrystalline aggregates formed from a single basic crystal of conductivity σ was recently established by Avellaneda. Cherkaev, Lurie and Milton. The bound holds for any basic crystal, but for isotropic aggregates of a uniaxial crystal, the bound is achieved by a sphere assemblage model of Schulgasser. This left open the question of attainability of the bound when the crystal is not uniaxial. The present work establishes that the bound is always attained by a rather large class of polycrystalline materials. These polycrystalline materials, with maximal electrical resistivity, are constructed by sequential lamination of the basic crystal and rotations of itself on widely separated length scales. The analysis is facilitated by introducing a tensor S = 0( 0I + σ) -1 where 0 > 0 is chosen so that Tr S = 1. This tensor s is related to the electric field in the optimal polycrystalline configurations.

  1. Creep and stress relaxation modeling of polycrystalline ceramic fibers

    NASA Technical Reports Server (NTRS)

    Dicarlo, James A.; Morscher, Gregory N.

    1994-01-01

    A variety of high performance polycrystalline ceramic fibers are currently being considered as reinforcement for high temperature ceramic matrix composites. However, under mechanical loading about 800 C, these fibers display creep related instabilities which can result in detrimental changes in composite dimensions, strength, and internal stress distributions. As a first step toward understanding these effects, this study examines the validity of a mechanism-based empirical model which describes primary stage tensile creep and stress relaxation of polycrystalline ceramic fibers as independent functions of time, temperature, and applied stress or strain. To verify these functional dependencies, a simple bend test is used to measure stress relaxation for four types of commercial ceramic fibers for which direct tensile creep data are available. These fibers include both nonoxide (SCS-6, Nicalon) and oxide (PRD-166, FP) compositions. The results of the Bend Stress Relaxation (BSR) test not only confirm the stress, time, and temperature dependencies predicted by the model, but also allow measurement of model empirical parameters for the four fiber types. In addition, comparison of model tensile creep predictions based on the BSR test results with the literature data show good agreement, supporting both the predictive capability of the model and the use of the BSR text as a simple method for parameter determination for other fibers.

  2. Disposal of metal fragments released during polycrystalline slicing by multi-wire saw

    NASA Astrophysics Data System (ADS)

    Boutouchent-Guerfi, N.; Drouiche, N.; Medjahed, S.; Ould-Hamou, M.; Sahraoui, F.

    2016-08-01

    The environmental and economic impacts linked with solar systems are largely based on discharges of slurry generated during the various stages of sawing and cutting ingots. These discharges into the environment are subject to the general regulations on hazardous and special industrial waste disposal. Therefore, they should not be abandoned or burned in open air. The cutting of Silicon ingots leads to the production of Silicon wafers additional costs, losing more than 30% of Silicon material. Abrasive grains (Silicon Carbide) trapped between the wire and the block of Silicon need to be removed by various mechanisms to be later evacuated by slurry fragments. In the interest of decreasing operational costs during polycrystalline ingot slicing at Semiconductors Research Center, and, avoid environmental problems; it is necessary to recover the solar grade Silicon from the Silicon sawing waste. For this reason, the removal of metal fragments has become a preliminary requirement to regenerate the slurry; in addition, the solid phase needs to be separated from the liquid phase after the dissolution PEG with the solvent. In the present study, magnetic separation and centrifugation methods were adopted for metals removal, followed by the analysis of some operating parameters such as: washing time, pH, and initial concentration of Silicon. Finally, analytical, morphological and basic methods were performed in order to evaluate the efficiency of the process undertaken.

  3. Single-walled carbon nanotubes for high-performance electronics.

    PubMed

    Cao, Qing; Han, Shu-jen

    2013-10-07

    Single-walled carbon nanotubes (SWNT) could replace silicon in high-performance electronics with their exceptional electrical properties and intrinsic ultra-thin body. During the past five years, the major focus of this field is gradually shifting from proof-of-concept prototyping in academia to technology development in industry with emphasis on manufacturability and integration issues. This article reviews recent advances, starting with experimental and modeling works that evaluate the potential of adopting SWNTs in ultimately scaled transistors. Techniques to separate nanotubes according to their electronic types and assemble them into aligned arrays are then discussed, followed by a description of the engineering aspects in their implementation in integrated circuits and systems. A concluding discussion provides some perspectives on future challenges and research opportunities.

  4. Method for producing silicon thin-film transistors with enhanced forward current drive

    DOEpatents

    Weiner, K.H.

    1998-06-30

    A method is disclosed for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates. 1 fig.

  5. Method for producing silicon thin-film transistors with enhanced forward current drive

    DOEpatents

    Weiner, Kurt H.

    1998-01-01

    A method for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates.

  6. High-Performance Planar-Type Photodetector on (100) Facet of MAPbI3 Single Crystal

    NASA Astrophysics Data System (ADS)

    Lian, Zhipeng; Yan, Qingfeng; Lv, Qianrui; Wang, Ying; Liu, Lili; Zhang, Lijing; Pan, Shilie; Li, Qiang; Wang, Liduo; Sun, Jia-Lin

    2015-11-01

    Recently, the discovery of organometallic halide perovskites provides promising routes for fabricating optoelectronic devices with low cost and high performance. Previous experimental studies of MAPbI3 optoelectronic devices, such as photodetectors and solar cells, are normally based on polycrystalline films. In this work, a high-performance planar-type photodetector fabricated on the (100) facet of a MAPbI3 single crystal is proposed. We demonstrate that MAPbI3 photodetector based on single crystal can perform much better than that on polycrystalline-film counterpart. The low trap density of MAPbI3 single crystal accounts for the higher carrier mobility and longer carrier diffusion length, resulted in a significant performance increasement of MAPbI3 photodetector. Compared with similar planar-type photodetectors based on MAPbI3 polycrystalline film, our MAPbI3 single crystal photodetector showed excellent performance with good stability and durability, broader response spectrum to near-infrared region, about 102 times higher responsivity and EQE, and approximately 103 times faster response speed. These results may pave the way for exploiting high-performance perovskites photodetectors based on single crystal.

  7. High-Performance Planar-Type Photodetector on (100) Facet of MAPbI3 Single Crystal

    PubMed Central

    Lian, Zhipeng; Yan, Qingfeng; Lv, Qianrui; Wang, Ying; Liu, Lili; Zhang, Lijing; Pan, Shilie; Li, Qiang; Wang, Liduo; Sun, Jia-Lin

    2015-01-01

    Recently, the discovery of organometallic halide perovskites provides promising routes for fabricating optoelectronic devices with low cost and high performance. Previous experimental studies of MAPbI3 optoelectronic devices, such as photodetectors and solar cells, are normally based on polycrystalline films. In this work, a high-performance planar-type photodetector fabricated on the (100) facet of a MAPbI3 single crystal is proposed. We demonstrate that MAPbI3 photodetector based on single crystal can perform much better than that on polycrystalline-film counterpart. The low trap density of MAPbI3 single crystal accounts for the higher carrier mobility and longer carrier diffusion length, resulted in a significant performance increasement of MAPbI3 photodetector. Compared with similar planar-type photodetectors based on MAPbI3 polycrystalline film, our MAPbI3 single crystal photodetector showed excellent performance with good stability and durability, broader response spectrum to near-infrared region, about 102 times higher responsivity and EQE, and approximately 103 times faster response speed. These results may pave the way for exploiting high-performance perovskites photodetectors based on single crystal. PMID:26563975

  8. Dinosaurs can fly -- High performance refining

    SciTech Connect

    Treat, J.E.

    1995-09-01

    High performance refining requires that one develop a winning strategy based on a clear understanding of one`s position in one`s company`s value chain; one`s competitive position in the products markets one serves; and the most likely drivers and direction of future market forces. The author discussed all three points, then described measuring performance of the company. To become a true high performance refiner often involves redesigning the organization as well as the business processes. The author discusses such redesigning. The paper summarizes ten rules to follow to achieve high performance: listen to the market; optimize; organize around asset or area teams; trust the operators; stay flexible; source strategically; all maintenance is not equal; energy is not free; build project discipline; and measure and reward performance. The paper then discusses the constraints to the implementation of change.

  9. High-performance computing and communications

    SciTech Connect

    Stevens, R.

    1993-11-01

    This presentation has two parts. The first part discusses the US High-Performance Computing and Communications program -- its goals, funding, process, revisions, and research in high-performance computing systems, advanced software technology, and basic research and human resources. The second part of the presentation covers specific work conducted under this program at Argonne National Laboratory. Argonne`s efforts focus on computational science research, software tool development, and evaluation of experimental computer architectures. In addition, the author describes collaborative activities at Argonne in high-performance computing, including an Argonne/IBM project to evaluate and test IBM`s newest parallel computers and the Scalable I/O Initiative being spearheaded by the Concurrent Supercomputing Consortium.

  10. Strategy Guideline. Partnering for High Performance Homes

    SciTech Connect

    Prahl, Duncan

    2013-01-01

    High performance houses require a high degree of coordination and have significant interdependencies between various systems in order to perform properly, meet customer expectations, and minimize risks for the builder. Responsibility for the key performance attributes is shared across the project team and can be well coordinated through advanced partnering strategies. For high performance homes, traditional partnerships need to be matured to the next level and be expanded to all members of the project team including trades, suppliers, manufacturers, HERS raters, designers, architects, and building officials as appropriate. This guide is intended for use by all parties associated in the design and construction of high performance homes. It serves as a starting point and features initial tools and resources for teams to collaborate to continually improve the energy efficiency and durability of new houses.

  11. Advanced high-performance computer system architectures

    NASA Astrophysics Data System (ADS)

    Vinogradov, V. I.

    2007-02-01

    Convergence of computer systems and communication technologies are moving to switched high-performance modular system architectures on the basis of high-speed switched interconnections. Multi-core processors become more perspective way to high-performance system, and traditional parallel bus system architectures (VME/VXI, cPCI/PXI) are moving to new higher speed serial switched interconnections. Fundamentals in system architecture development are compact modular component strategy, low-power processor, new serial high-speed interface chips on the board, and high-speed switched fabric for SAN architectures. Overview of advanced modular concepts and new international standards for development high-performance embedded and compact modular systems for real-time applications are described.

  12. High performance computing at Sandia National Labs

    SciTech Connect

    Cahoon, R.M.; Noe, J.P.; Vandevender, W.H.

    1995-10-01

    Sandia`s High Performance Computing Environment requires a hierarchy of resources ranging from desktop, to department, to centralized, and finally to very high-end corporate resources capable of teraflop performance linked via high-capacity Asynchronous Transfer Mode (ATM) networks. The mission of the Scientific Computing Systems Department is to provide the support infrastructure for an integrated corporate scientific computing environment that will meet Sandia`s needs in high-performance and midrange computing, network storage, operational support tools, and systems management. This paper describes current efforts at SNL/NM to expand and modernize centralized computing resources in support of this mission.

  13. Fault tolerant, radiation hard, high performance digital signal processor

    NASA Technical Reports Server (NTRS)

    Holmann, Edgar; Linscott, Ivan R.; Maurer, Michael J.; Tyler, G. L.; Libby, Vibeke

    1990-01-01

    An architecture has been developed for a high-performance VLSI digital signal processor that is highly reliable, fault-tolerant, and radiation-hard. The signal processor, part of a spacecraft receiver designed to support uplink radio science experiments at the outer planets, organizes the connections between redundant arithmetic resources, register files, and memory through a shuffle exchange communication network. The configuration of the network and the state of the processor resources are all under microprogram control, which both maps the resources according to algorithmic needs and reconfigures the processing should a failure occur. In addition, the microprogram is reloadable through the uplink to accommodate changes in the science objectives throughout the course of the mission. The processor will be implemented with silicon compiler tools, and its design will be verified through silicon compilation simulation at all levels from the resources to full functionality. By blending reconfiguration with redundancy the processor implementation is fault-tolerant and reliable, and possesses the long expected lifetime needed for a spacecraft mission to the outer planets.

  14. Radio Synthesis Imaging - A High Performance Computing and Communications Project

    NASA Astrophysics Data System (ADS)

    Crutcher, Richard M.

    The National Science Foundation has funded a five-year High Performance Computing and Communications project at the National Center for Supercomputing Applications (NCSA) for the direct implementation of several of the computing recommendations of the Astronomy and Astrophysics Survey Committee (the "Bahcall report"). This paper is a summary of the project goals and a progress report. The project will implement a prototype of the next generation of astronomical telescope systems - remotely located telescopes connected by high-speed networks to very high performance, scalable architecture computers and on-line data archives, which are accessed by astronomers over Gbit/sec networks. Specifically, a data link has been installed between the BIMA millimeter-wave synthesis array at Hat Creek, California and NCSA at Urbana, Illinois for real-time transmission of data to NCSA. Data are automatically archived, and may be browsed and retrieved by astronomers using the NCSA Mosaic software. In addition, an on-line digital library of processed images will be established. BIMA data will be processed on a very high performance distributed computing system, with I/O, user interface, and most of the software system running on the NCSA Convex C3880 supercomputer or Silicon Graphics Onyx workstations connected by HiPPI to the high performance, massively parallel Thinking Machines Corporation CM-5. The very computationally intensive algorithms for calibration and imaging of radio synthesis array observations will be optimized for the CM-5 and new algorithms which utilize the massively parallel architecture will be developed. Code running simultaneously on the distributed computers will communicate using the Data Transport Mechanism developed by NCSA. The project will also use the BLANCA Gbit/s testbed network between Urbana and Madison, Wisconsin to connect an Onyx workstation in the University of Wisconsin Astronomy Department to the NCSA CM-5, for development of long

  15. High Performance Work Systems for Online Education

    ERIC Educational Resources Information Center

    Contacos-Sawyer, Jonna; Revels, Mark; Ciampa, Mark

    2010-01-01

    The purpose of this paper is to identify the key elements of a High Performance Work System (HPWS) and explore the possibility of implementation in an online institution of higher learning. With the projected rapid growth of the demand for online education and its importance in post-secondary education, providing high quality curriculum, excellent…

  16. Performance, Performance System, and High Performance System

    ERIC Educational Resources Information Center

    Jang, Hwan Young

    2009-01-01

    This article proposes needed transitions in the field of human performance technology. The following three transitions are discussed: transitioning from training to performance, transitioning from performance to performance system, and transitioning from learning organization to high performance system. A proposed framework that comprises…

  17. Overview of high performance aircraft propulsion research

    NASA Technical Reports Server (NTRS)

    Biesiadny, Thomas J.

    1992-01-01

    The overall scope of the NASA Lewis High Performance Aircraft Propulsion Research Program is presented. High performance fighter aircraft of interest include supersonic flights with such capabilities as short take off and vertical landing (STOVL) and/or high maneuverability. The NASA Lewis effort involving STOVL propulsion systems is focused primarily on component-level experimental and analytical research. The high-maneuverability portion of this effort, called the High Alpha Technology Program (HATP), is part of a cooperative program among NASA's Lewis, Langley, Ames, and Dryden facilities. The overall objective of the NASA Inlet Experiments portion of the HATP, which NASA Lewis leads, is to develop and enhance inlet technology that will ensure high performance and stability of the propulsion system during aircraft maneuvers at high angles of attack. To accomplish this objective, both wind-tunnel and flight experiments are used to obtain steady-state and dynamic data, and computational fluid dynamics (CFD) codes are used for analyses. This overview of the High Performance Aircraft Propulsion Research Program includes a sampling of the results obtained thus far and plans for the future.

  18. Teacher Accountability at High Performing Charter Schools

    ERIC Educational Resources Information Center

    Aguirre, Moises G.

    2016-01-01

    This study will examine the teacher accountability and evaluation policies and practices at three high performing charter schools located in San Diego County, California. Charter schools are exempted from many laws, rules, and regulations that apply to traditional school systems. By examining the teacher accountability systems at high performing…

  19. Commercial Buildings High Performance Rooftop Unit Challenge

    SciTech Connect

    2011-12-16

    The U.S. Department of Energy (DOE) and the Commercial Building Energy Alliances (CBEAs) are releasing a new design specification for high performance rooftop air conditioning units (RTUs). Manufacturers who develop RTUs based on this new specification will find strong interest from the commercial sector due to the energy and financial savings.

  20. Project materials [Commercial High Performance Buildings Project

    SciTech Connect

    2001-01-01

    The Consortium for High Performance Buildings (ChiPB) is an outgrowth of DOE'S Commercial Whole Buildings Roadmapping initiatives. It is a team-driven public/private partnership that seeks to enable and demonstrate the benefit of buildings that are designed, built and operated to be energy efficient, environmentally sustainable, superior quality, and cost effective.

  1. High Performance Networks for High Impact Science

    SciTech Connect

    Scott, Mary A.; Bair, Raymond A.

    2003-02-13

    This workshop was the first major activity in developing a strategic plan for high-performance networking in the Office of Science. Held August 13 through 15, 2002, it brought together a selection of end users, especially representing the emerging, high-visibility initiatives, and network visionaries to identify opportunities and begin defining the path forward.

  2. High Performance Computing and Communications Panel Report.

    ERIC Educational Resources Information Center

    President's Council of Advisors on Science and Technology, Washington, DC.

    This report offers advice on the strengths and weaknesses of the High Performance Computing and Communications (HPCC) initiative, one of five presidential initiatives launched in 1992 and coordinated by the Federal Coordinating Council for Science, Engineering, and Technology. The HPCC program has the following objectives: (1) to extend U.S.…

  3. Massive Contingency Analysis with High Performance Computing

    SciTech Connect

    Huang, Zhenyu; Chen, Yousu; Nieplocha, Jaroslaw

    2009-07-26

    Contingency analysis is a key function in the Energy Management System (EMS) to assess the impact of various combinations of power system component failures based on state estimates. Contingency analysis is also extensively used in power market operation for feasibility test of market solutions. Faster analysis of more cases is required to safely and reliably operate today’s power grids with less marginal and more intermittent renewable energy sources. Enabled by the latest development in the computer industry, high performance computing holds the promise of meet the need in the power industry. This paper investigates the potential of high performance computing for massive contingency analysis. The framework of "N-x" contingency analysis is established and computational load balancing schemes are studied and implemented with high performance computers. Case studies of massive 300,000-contingency-case analysis using the Western Electricity Coordinating Council power grid model are presented to illustrate the application of high performance computing and demonstrate the performance of the framework and computational load balancing schemes.

  4. Debugging a high performance computing program

    DOEpatents

    Gooding, Thomas M.

    2013-08-20

    Methods, apparatus, and computer program products are disclosed for debugging a high performance computing program by gathering lists of addresses of calling instructions for a plurality of threads of execution of the program, assigning the threads to groups in dependence upon the addresses, and displaying the groups to identify defective threads.

  5. Debugging a high performance computing program

    DOEpatents

    Gooding, Thomas M.

    2014-08-19

    Methods, apparatus, and computer program products are disclosed for debugging a high performance computing program by gathering lists of addresses of calling instructions for a plurality of threads of execution of the program, assigning the threads to groups in dependence upon the addresses, and displaying the groups to identify defective threads.

  6. High-performance flexible thin-film transistors exfoliated from bulk wafer.

    PubMed

    Zhai, Yujia; Mathew, Leo; Rao, Rajesh; Xu, Dewei; Banerjee, Sanjay K

    2012-11-14

    Mechanically flexible integrated circuits (ICs) have gained increasing attention in recent years with emerging markets in portable electronics. Although a number of thin-film-transistor (TFT) IC solutions have been reported, challenges still remain for the fabrication of inexpensive, high-performance flexible devices. We report a simple and straightforward solution: mechanically exfoliating a thin Si film containing ICs. Transistors and circuits can be prefabricated on bulk silicon wafer with the conventional complementary metal-oxide-semiconductor (CMOS) process flow without additional temperature or process limitations. The short channel MOSFETs exhibit similar electrical performance before and after exfoliation. This exfoliation process also provides a fast and economical approach to producing thinned silicon wafers, which is a key enabler for three-dimensional (3D) silicon integration based on Through Silicon Vias (TSVs).

  7. Kinetics and Mechanisms of Primary and Steady State Creep in B- and Al- Containing Alpha Silicon Carbide

    DTIC Science & Technology

    1989-07-01

    silicon carbide , devoid of sintering aids, creeps by dislocation motion and climb. Silicon carbide containing...impurity substitution in the sintered silicon carbide . Experimental measurements of grain boundary sliding offsets on polycrystalline silicon carbide have... carbide whisker reinforcement has no beneficial effect on the creep resistance of Si3N4, whereas, in the more easily deformed mullite, silicon carbide whisker reinforcement does result in a reduced steady state

  8. High performance compound semiconductor SPAD arrays

    NASA Astrophysics Data System (ADS)

    Harmon, Eric S.; Naydenkov, Mikhail; Bowling, Jared

    2016-05-01

    Aggregated compound semiconductor single photon avalanche diode (SPAD) arrays are emerging as a viable alternative to the silicon photomultiplier (SiPM). Compound semiconductors have the potential to surpass SiPM performance, potentially achieving orders of magnitude lower dark count rates and improved radiation hardness. New planar processing techniques have been developed to enable compound semiconductor SPAD devices to be produced with pixel pitches of 11 - 25 microns, with thousands of SPADs per array.

  9. Removing Undesired Fine Powder From Silicon Reactor

    NASA Technical Reports Server (NTRS)

    Flagella, Robert N.

    1992-01-01

    Fluidized-bed reactor produces highly pure polycrystalline silicon particles with diameters approximately greater than 400 micrometers. Operates by pyrolysis of silane in reaction zone, which is bed of silicon seed particles fluidized by flow of silane and carrier gas. Above reaction zone, gas mixture flows rapidly enough to entrain silicon powders, but not larger seed and product particles. Entrained particles swept out of reactor. Applicable to other processes such as production of fine metal and ceramic powders where control of sizes of product needed.

  10. Evaluation of high-performance computing software

    SciTech Connect

    Browne, S.; Dongarra, J.; Rowan, T.

    1996-12-31

    The absence of unbiased and up to date comparative evaluations of high-performance computing software complicates a user`s search for the appropriate software package. The National HPCC Software Exchange (NHSE) is attacking this problem using an approach that includes independent evaluations of software, incorporation of author and user feedback into the evaluations, and Web access to the evaluations. We are applying this approach to the Parallel Tools Library (PTLIB), a new software repository for parallel systems software and tools, and HPC-Netlib, a high performance branch of the Netlib mathematical software repository. Updating the evaluations with feed-back and making it available via the Web helps ensure accuracy and timeliness, and using independent reviewers produces unbiased comparative evaluations difficult to find elsewhere.

  11. Monitoring SLAC High Performance UNIX Computing Systems

    SciTech Connect

    Lettsome, Annette K.; /Bethune-Cookman Coll. /SLAC

    2005-12-15

    Knowledge of the effectiveness and efficiency of computers is important when working with high performance systems. The monitoring of such systems is advantageous in order to foresee possible misfortunes or system failures. Ganglia is a software system designed for high performance computing systems to retrieve specific monitoring information. An alternative storage facility for Ganglia's collected data is needed since its default storage system, the round-robin database (RRD), struggles with data integrity. The creation of a script-driven MySQL database solves this dilemma. This paper describes the process took in the creation and implementation of the MySQL database for use by Ganglia. Comparisons between data storage by both databases are made using gnuplot and Ganglia's real-time graphical user interface.

  12. High performance flight simulation at NASA Langley

    NASA Technical Reports Server (NTRS)

    Cleveland, Jeff I., II; Sudik, Steven J.; Grove, Randall D.

    1992-01-01

    The use of real-time simulation at the NASA facility is reviewed specifically with regard to hardware, software, and the use of a fiberoptic-based digital simulation network. The network hardware includes supercomputers that support 32- and 64-bit scalar, vector, and parallel processing technologies. The software include drivers, real-time supervisors, and routines for site-configuration management and scheduling. Performance specifications include: (1) benchmark solution at 165 sec for a single CPU; (2) a transfer rate of 24 million bits/s; and (3) time-critical system responsiveness of less than 35 msec. Simulation applications include the Differential Maneuvering Simulator, Transport Systems Research Vehicle simulations, and the Visual Motion Simulator. NASA is shown to be in the final stages of developing a high-performance computing system for the real-time simulation of complex high-performance aircraft.

  13. AHPCRC - Army High Performance Computing Research Center

    DTIC Science & Technology

    2010-01-01

    treatments and reconstructive surgeries . High performance computer simu- lation allows designers to try out numerous mechanical and material...investigating the effect of techniques for simplifying the calculations (sending the projectile through a pre-existing hole, for example) on the accuracy of...semiconductor particles are size-dependent. These properties, including yield strength and resistance to fatigue, are not well predicted by macroscopic

  14. AHPCRC - Army High Performance Computing Research Center

    DTIC Science & Technology

    2008-01-01

    materials “from the atoms up” or to model biological systems at the molecular level. The speed and capacity of massively parallel computers are key...Streamlined, massively parallel high performance computing structural codes allow researchers to examine many relevant physical factors simultaneously...expenditure of energy, so that the drones can carry their load of sensors, communications devices, and fuel. AHPCRC researchers are using massively

  15. High-performance reactionless scan mechanism

    NASA Technical Reports Server (NTRS)

    Williams, Ellen I.; Summers, Richard T.; Ostaszewski, Miroslaw A.

    1995-01-01

    A high-performance reactionless scan mirror mechanism was developed for space applications to provide thermal images of the Earth. The design incorporates a unique mechanical means of providing reactionless operation that also minimizes weight, mechanical resonance operation to minimize power, combined use of a single optical encoder to sense coarse and fine angular position, and a new kinematic mount of the mirror. A flex pivot hardware failure and current project status are discussed.

  16. High Performance Multiwall Carbon Nanotube Bolometers

    DTIC Science & Technology

    2010-10-21

    REPORT High performance multiwall carbon nanotube bolometers 14. ABSTRACT 16. SECURITY CLASSIFICATION OF: High infrared bolometric photoresponse has...been observed in multiwall carbon nanotube MWCNT films at room temperature. The observed detectivity D in exceeding 3.3 106 cm Hz1/2 /W on MWCNT film...U.S. Army Research Office P.O. Box 12211 Research Triangle Park, NC 27709-2211 15. SUBJECT TERMS carbon nanotube, infrared detector, bolometer

  17. High Performance Split-Stirling Cooler Program

    DTIC Science & Technology

    1982-09-01

    7 SPLIT- STIRLING CYCLE CRYOCOOLER . ...... . . . . . 13 8 TEMPERATURE-SHOCK COMPARISON PERFORMANCE DATA, S/N 002 . . 23 9 TEMPERATURE-SHOCK...PERFORMANCE SPLIT- STIRLING "COOLER PROGRAM FINAL TECHNICAL REPORT "September 1982 Prepared for NIGHT VISION AND ELECTRO-OPTICS LABORATORI ES "Contract DAAK70...REPORT & P.Vt2OO COVERED HIGH PERFORMANCE SPLIT- STIRLING COOLER PROGRAM Final Technical Sept. 1979. - Sept. 1982 S. PERPORMING ORO. REPORT KUMMER

  18. Task parallelism and high-performance languages

    SciTech Connect

    Foster, I.

    1996-03-01

    The definition of High Performance Fortran (HPF) is a significant event in the maturation of parallel computing: it represents the first parallel language that has gained widespread support from vendors and users. The subject of this paper is to incorporate support for task parallelism. The term task parallelism refers to the explicit creation of multiple threads of control, or tasks, which synchronize and communicate under programmer control. Task and data parallelism are complementary rather than competing programming models. While task parallelism is more general and can be used to implement algorithms that are not amenable to data-parallel solutions, many problems can benefit from a mixed approach, with for example a task-parallel coordination layer integrating multiple data-parallel computations. Other problems admit to both data- and task-parallel solutions, with the better solution depending on machine characteristics, compiler performance, or personal taste. For these reasons, we believe that a general-purpose high-performance language should integrate both task- and data-parallel constructs. The challenge is to do so in a way that provides the expressivity needed for applications, while preserving the flexibility and portability of a high-level language. In this paper, we examine and illustrate the considerations that motivate the use of task parallelism. We also describe one particular approach to task parallelism in Fortran, namely the Fortran M extensions. Finally, we contrast Fortran M with other proposed approaches and discuss the implications of this work for task parallelism and high-performance languages.

  19. Computational Biology and High Performance Computing 2000

    SciTech Connect

    Simon, Horst D.; Zorn, Manfred D.; Spengler, Sylvia J.; Shoichet, Brian K.; Stewart, Craig; Dubchak, Inna L.; Arkin, Adam P.

    2000-10-19

    The pace of extraordinary advances in molecular biology has accelerated in the past decade due in large part to discoveries coming from genome projects on human and model organisms. The advances in the genome project so far, happening well ahead of schedule and under budget, have exceeded any dreams by its protagonists, let alone formal expectations. Biologists expect the next phase of the genome project to be even more startling in terms of dramatic breakthroughs in our understanding of human biology, the biology of health and of disease. Only today can biologists begin to envision the necessary experimental, computational and theoretical steps necessary to exploit genome sequence information for its medical impact, its contribution to biotechnology and economic competitiveness, and its ultimate contribution to environmental quality. High performance computing has become one of the critical enabling technologies, which will help to translate this vision of future advances in biology into reality. Biologists are increasingly becoming aware of the potential of high performance computing. The goal of this tutorial is to introduce the exciting new developments in computational biology and genomics to the high performance computing community.

  20. Achieving High Performance Perovskite Solar Cells

    NASA Astrophysics Data System (ADS)

    Yang, Yang

    2015-03-01

    Recently, metal halide perovskite based solar cell with the characteristics of rather low raw materials cost, great potential for simple process and scalable production, and extreme high power conversion efficiency (PCE), have been highlighted as one of the most competitive technologies for next generation thin film photovoltaic (PV). In UCLA, we have realized an efficient pathway to achieve high performance pervoskite solar cells, where the findings are beneficial to this unique materials/devices system. Our recent progress lies in perovskite film formation, defect passivation, transport materials design, interface engineering with respect to high performance solar cell, as well as the exploration of its applications beyond photovoltaics. These achievements include: 1) development of vapor assisted solution process (VASP) and moisture assisted solution process, which produces perovskite film with improved conformity, high crystallinity, reduced recombination rate, and the resulting high performance; 2) examination of the defects property of perovskite materials, and demonstration of a self-induced passivation approach to reduce carrier recombination; 3) interface engineering based on design of the carrier transport materials and the electrodes, in combination with high quality perovskite film, which delivers 15 ~ 20% PCEs; 4) a novel integration of bulk heterojunction to perovskite solar cell to achieve better light harvest; 5) fabrication of inverted solar cell device with high efficiency and flexibility and 6) exploration the application of perovskite materials to photodetector. Further development in film, device architecture, and interfaces will lead to continuous improved perovskite solar cells and other organic-inorganic hybrid optoelectronics.

  1. ADVANCED HIGH PERFORMANCE SOLID WALL BLANKET CONCEPTS

    SciTech Connect

    WONG, CPC; MALANG, S; NISHIO, S; RAFFRAY, R; SAGARA, S

    2002-04-01

    OAK A271 ADVANCED HIGH PERFORMANCE SOLID WALL BLANKET CONCEPTS. First wall and blanket (FW/blanket) design is a crucial element in the performance and acceptance of a fusion power plant. High temperature structural and breeding materials are needed for high thermal performance. A suitable combination of structural design with the selected materials is necessary for D-T fuel sufficiency. Whenever possible, low afterheat, low chemical reactivity and low activation materials are desired to achieve passive safety and minimize the amount of high-level waste. Of course the selected fusion FW/blanket design will have to match the operational scenarios of high performance plasma. The key characteristics of eight advanced high performance FW/blanket concepts are presented in this paper. Design configurations, performance characteristics, unique advantages and issues are summarized. All reviewed designs can satisfy most of the necessary design goals. For further development, in concert with the advancement in plasma control and scrape off layer physics, additional emphasis will be needed in the areas of first wall coating material selection, design of plasma stabilization coils, consideration of reactor startup and transient events. To validate the projected performance of the advanced FW/blanket concepts the critical element is the need for 14 MeV neutron irradiation facilities for the generation of necessary engineering design data and the prediction of FW/blanket components lifetime and availability.

  2. Scaling properties of polycrystalline graphene: a review

    NASA Astrophysics Data System (ADS)

    Isacsson, Andreas; Cummings, Aron W.; Colombo, Luciano; Colombo, Luigi; Kinaret, Jari M.; Roche, Stephan

    2017-03-01

    We present an overview of the electrical, mechanical, and thermal properties of polycrystalline graphene. Most global properties of this material, such as the charge mobility, thermal conductivity, or Young’s modulus, are sensitive to its microstructure, for instance the grain size and the presence of line or point defects. Both the local and global features of polycrystalline graphene have been investigated by a variety of simulations and experimental measurements. In this review, we summarize the properties of polycrystalline graphene, and by establishing a perspective on how the microstructure impacts its large-scale physical properties, we aim to provide guidance for further optimization and improvement of applications based on this material, such as flexible and wearable electronics, and high-frequency or spintronic devices.

  3. Elastic properties of polycrystalline dense matter

    NASA Astrophysics Data System (ADS)

    Kobyakov, D.; Pethick, C. J.

    2015-04-01

    Elastic properties of the solid regions of neutron star crusts and white dwarfs play an important role in theories of stellar oscillations. Matter in compact stars is presumably polycrystalline and, since the elastic properties of single crystals of such matter are very anisotropic, it is necessary to relate elastic properties of the polycrystal to those of a single crystal. We calculate the effective shear modulus of polycrystalline matter with randomly oriented crystallites using a self-consistent theory that has been very successful in applications to terrestrial materials and show that previous calculations overestimate the shear modulus by approximately 28 per cent.

  4. Grain boundary dominated ion migration in polycrystalline organic–inorganic halide perovskite films

    SciTech Connect

    Shao, Yuchuan; Fang, Yanjun; Li, Tao; Wang, Qi; Dong, Qingfeng; Deng, Yehao; Yuan, Yongbo; Wei, Haotong; Wang, Meiyu; Gruverman, Alexei; Shield, Jeffery; Huang, Jinsong

    2016-03-21

    The efficiency of perovskite solar cells is approaching that of single-crystalline silicon solar cells despite the presence of large grain boundary (GB) area in the polycrystalline thin films. Here, by using a combination of nanoscopic and macroscopic level measurements, we show that the ion migration in polycrystalline perovskites is dominated through GBs. Conducting atomic force microscopy measurements reveal much stronger hysteresis both for photocurrent and dark-current at the GBs than on the grains interiors, which can be explained by faster ion migration at the GBs. The dramatically enhanced ion migration results in a redistribution of ions along the GBs after electric poling, in contrast to the intact grain area. The perovskite single-crystal devices without GBs show negligible current hysteresis and no ion-migration signal. Furthermore, the discovery of dominating ion migration through GBs in perovskites can lead to broad applications in many types of devices including photovoltaics, memristors, and ion batteries.

  5. High Performance Calcium Titanate Nanoparticle ER Fluids

    NASA Astrophysics Data System (ADS)

    Wang, Xuezhao; Shen, Rong; Wen, Weijia; Lu, Kunquan

    A type of calcium titanate (CTO) nanoparticles was synthesized by means of wet chemical method [1] without coating on the particles. The CTO/silicone oil ER fluid exhibits excellent electrorheological properties: high shear stress (~50-100 kPa) under dc electric field, a low current density (less than 2μA/cm2 at 5kV/mm), and long term stability against sedimentation. Although there are not special additives in the ER fluids, it is found from the chemical analysis that a trace of alkyl group, hydroxyl group, carbonyl group and some ions is remained in the particles which may dominate the ER response.

  6. Polycrystalline CVD diamond device level modeling for particle detection applications

    NASA Astrophysics Data System (ADS)

    Morozzi, A.; Passeri, D.; Kanxheri, K.; Servoli, L.; Lagomarsino, S.; Sciortino, S.

    2016-12-01

    Diamond is a promising material whose excellent physical properties foster its use for radiation detection applications, in particular in those hostile operating environments where the silicon-based detectors behavior is limited due to the high radiation fluence. Within this framework, the application of Technology Computer Aided Design (TCAD) simulation tools is highly envisaged for the study, the optimization and the predictive analysis of sensing devices. Since the novelty of using diamond in electronics, this material is not included in the library of commercial, state-of-the-art TCAD software tools. In this work, we propose the development, the application and the validation of numerical models to simulate the electrical behavior of polycrystalline (pc)CVD diamond conceived for diamond sensors for particle detection. The model focuses on the characterization of a physically-based pcCVD diamond bandgap taking into account deep-level defects acting as recombination centers and/or trap states. While a definite picture of the polycrystalline diamond band-gap is still debated, the effect of the main parameters (e.g. trap densities, capture cross-sections, etc.) can be deeply investigated thanks to the simulated approach. The charge collection efficiency due to β -particle irradiation of diamond materials provided by different vendors and with different electrode configurations has been selected as figure of merit for the model validation. The good agreement between measurements and simulation findings, keeping the traps density as the only one fitting parameter, assesses the suitability of the TCAD modeling approach as a predictive tool for the design and the optimization of diamond-based radiation detectors.

  7. Failure analysis of high performance ballistic fibers

    NASA Astrophysics Data System (ADS)

    Spatola, Jennifer S.

    High performance fibers have a high tensile strength and modulus, good wear resistance, and a low density, making them ideal for applications in ballistic impact resistance, such as body armor. However, the observed ballistic performance of these fibers is much lower than the predicted values. Since the predictions assume only tensile stress failure, it is safe to assume that the stress state is affecting fiber performance. The purpose of this research was to determine if there are failure mode changes in the fiber fracture when transversely loaded by indenters of different shapes. An experimental design mimicking transverse impact was used to determine any such effects. Three different indenters were used: round, FSP, and razor blade. The indenter height was changed to change the angle of failure tested. Five high performance fibers were examined: KevlarRTM KM2, SpectraRTM 130d, DyneemaRTM SK-62 and SK-76, and ZylonRTM 555. Failed fibers were analyzed using an SEM to determine failure mechanisms. The results show that the round and razor blade indenters produced a constant failure strain, as well as failure mechanisms independent of testing angle. The FSP indenter produced a decrease in failure strain as the angle increased. Fibrillation was the dominant failure mechanism at all angles for the round indenter, while through thickness shearing was the failure mechanism for the razor blade. The FSP indenter showed a transition from fibrillation at low angles to through thickness shearing at high angles, indicating that the round and razor blade indenters are extreme cases of the FSP indenter. The failure mechanisms observed with the FSP indenter at various angles correlated with the experimental strain data obtained during fiber testing. This indicates that geometry of the indenter tip in compression is a contributing factor in lowering the failure strain of the high performance fibers. TEM analysis of the fiber failure mechanisms was also attempted, though without

  8. Toward a theory of high performance.

    PubMed

    Kirby, Julia

    2005-01-01

    What does it mean to be a high-performance company? The process of measuring relative performance across industries and eras, declaring top performers, and finding the common drivers of their success is such a difficult one that it might seem a fool's errand to attempt. In fact, no one did for the first thousand or so years of business history. The question didn't even occur to many scholars until Tom Peters and Bob Waterman released In Search of Excellence in 1982. Twenty-three years later, we've witnessed several more attempts--and, just maybe, we're getting closer to answers. In this reported piece, HBR senior editor Julia Kirby explores why it's so difficult to study high performance and how various research efforts--including those from John Kotter and Jim Heskett; Jim Collins and Jerry Porras; Bill Joyce, Nitin Nohria, and Bruce Roberson; and several others outlined in a summary chart-have attacked the problem. The challenge starts with deciding which companies to study closely. Are the stars the ones with the highest market caps, the ones with the greatest sales growth, or simply the ones that remain standing at the end of the game? (And when's the end of the game?) Each major study differs in how it defines success, which companies it therefore declares to be worthy of emulation, and the patterns of activity and attitude it finds in common among them. Yet, Kirby concludes, as each study's method incrementally solves problems others have faced, we are progressing toward a consensus theory of high performance.

  9. High performance channel injection sealant invention abstract

    NASA Technical Reports Server (NTRS)

    Rosser, R. W.; Basiulis, D. I.; Salisbury, D. P. (Inventor)

    1982-01-01

    High performance channel sealant is based on NASA patented cyano and diamidoximine-terminated perfluoroalkylene ether prepolymers that are thermally condensed and cross linked. The sealant contains asbestos and, in its preferred embodiments, Lithofrax, to lower its thermal expansion coefficient and a phenolic metal deactivator. Extensive evaluation shows the sealant is extremely resistant to thermal degradation with an onset point of 280 C. The materials have a volatile content of 0.18%, excellent flexibility, and adherence properties, and fuel resistance. No corrosibility to aluminum or titanium was observed.

  10. High-Performance Water-Iodinating Cartridge

    NASA Technical Reports Server (NTRS)

    Sauer, Richard; Gibbons, Randall E.; Flanagan, David T.

    1993-01-01

    High-performance cartridge contains bed of crystalline iodine iodinates water to near saturation in single pass. Cartridge includes stainless-steel housing equipped with inlet and outlet for water. Bed of iodine crystals divided into layers by polytetrafluoroethylene baffles. Holes made in baffles and positioned to maximize length of flow path through layers of iodine crystals. Resulting concentration of iodine biocidal; suppresses growth of microbes in stored water or disinfects contaminated equipment. Cartridge resists corrosion and can be stored wet. Reused several times before necessary to refill with fresh iodine crystals.

  11. An Introduction to High Performance Computing

    NASA Astrophysics Data System (ADS)

    Almeida, Sérgio

    2013-09-01

    High Performance Computing (HPC) has become an essential tool in every researcher's arsenal. Most research problems nowadays can be simulated, clarified or experimentally tested by using computational simulations. Researchers struggle with computational problems when they should be focusing on their research problems. Since most researchers have little-to-no knowledge in low-level computer science, they tend to look at computer programs as extensions of their minds and bodies instead of completely autonomous systems. Since computers do not work the same way as humans, the result is usually Low Performance Computing where HPC would be expected.

  12. High-performance neural networks. [Neural computers

    SciTech Connect

    Dress, W.B.

    1987-06-01

    The new Forth hardware architectures offer an intermediate solution to high-performance neural networks while the theory and programming details of neural networks for synthetic intelligence are developed. This approach has been used successfully to determine the parameters and run the resulting network for a synthetic insect consisting of a 200-node ''brain'' with 1760 interconnections. Both the insect's environment and its sensor input have thus far been simulated. However, the frequency-coded nature of the Browning network allows easy replacement of the simulated sensors by real-world counterparts.

  13. Strategy Guideline. High Performance Residential Lighting

    SciTech Connect

    Holton, J.

    2012-02-01

    This report has been developed to provide a tool for the understanding and application of high performance lighting in the home. The strategies featured in this guide are drawn from recent advances in commercial lighting for application to typical spaces found in residential buildings. This guide offers strategies to greatly reduce lighting energy use through the application of high quality fluorescent and light emitting diode (LED) technologies. It is important to note that these strategies not only save energy in the home but also serve to satisfy the homeowner’s expectations for high quality lighting.

  14. High performance forward swept wing aircraft

    NASA Technical Reports Server (NTRS)

    Koenig, David G. (Inventor); Aoyagi, Kiyoshi (Inventor); Dudley, Michael R. (Inventor); Schmidt, Susan B. (Inventor)

    1988-01-01

    A high performance aircraft capable of subsonic, transonic and supersonic speeds employs a forward swept wing planform and at least one first and second solution ejector located on the inboard section of the wing. A high degree of flow control on the inboard sections of the wing is achieved along with improved maneuverability and control of pitch, roll and yaw. Lift loss is delayed to higher angles of attack than in conventional aircraft. In one embodiment the ejectors may be advantageously positioned spanwise on the wing while the ductwork is kept to a minimum.

  15. High performance thyratron driver with low jitter.

    PubMed

    Verma, Rishi; Lee, P; Springham, S V; Tan, T L; Rawat, R S

    2007-08-01

    We report the design and development of insulated gate bipolar junction transistor based high performance driver for operating thyratrons in grounded grid mode. With careful design, the driver meets the specification of trigger output pulse rise time less than 30 ns, jitter less than +/-1 ns, and time delay less than 160 ns. It produces a -600 V pulse of 500 ns duration (full width at half maximum) at repetition rate ranging from 1 Hz to 1.14 kHz. The developed module also facilitates heating and biasing units along with protection circuitry in one complete package.

  16. High Performance Polymer Memory and Its Formation

    DTIC Science & Technology

    2007-04-26

    Std. Z39.18 Final Report to AFOSR High Performance Polymer Memory Device and Its Formation Fund No.: FA9550-04-1-0215 Prepared by Prof. Yang Yang...polystyrene (PS). The metal nanoparticles were prepared by the two-phase 10-5 (b) 10𔄁Polymer film 1a CC , 10, Glass 1 -2 -1 0 1 2 3 4 5 Bias (V) Fig. I...such as copper pthalocyanine (CuPc), 24 ൢ zinc pthalocyanine (ZnPc), 27󈧠 tetracene, 29 and pentacene 30 have been used as donors combined with

  17. Silicone metalization

    SciTech Connect

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  18. Silicone metalization

    SciTech Connect

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2006-12-05

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  19. RESEARCH ON THIN FILM POLYCRYSTALLINE SOLAR CELLS.

    DTIC Science & Technology

    Studies of factors affecting the properties of polycrystalline CdTe film grown by the vapor reaction process are discussed and a variety of...molybdenum substrates are compared. No real differences are found. Rough measures of temperature effects and tellurium flow rate on film growth rate are

  20. High-performance computing in seismology

    SciTech Connect

    1996-09-01

    The scientific, technical, and economic importance of the issues discussed here presents a clear agenda for future research in computational seismology. In this way these problems will drive advances in high-performance computing in the field of seismology. There is a broad community that will benefit from this work, including the petroleum industry, research geophysicists, engineers concerned with seismic hazard mitigation, and governments charged with enforcing a comprehensive test ban treaty. These advances may also lead to new applications for seismological research. The recent application of high-resolution seismic imaging of the shallow subsurface for the environmental remediation industry is an example of this activity. This report makes the following recommendations: (1) focused efforts to develop validated documented software for seismological computations should be supported, with special emphasis on scalable algorithms for parallel processors; (2) the education of seismologists in high-performance computing technologies and methodologies should be improved; (3) collaborations between seismologists and computational scientists and engineers should be increased; (4) the infrastructure for archiving, disseminating, and processing large volumes of seismological data should be improved.

  1. High-performance computing for airborne applications

    SciTech Connect

    Quinn, Heather M; Manuzzato, Andrea; Fairbanks, Tom; Dallmann, Nicholas; Desgeorges, Rose

    2010-06-28

    Recently, there has been attempts to move common satellite tasks to unmanned aerial vehicles (UAVs). UAVs are significantly cheaper to buy than satellites and easier to deploy on an as-needed basis. The more benign radiation environment also allows for an aggressive adoption of state-of-the-art commercial computational devices, which increases the amount of data that can be collected. There are a number of commercial computing devices currently available that are well-suited to high-performance computing. These devices range from specialized computational devices, such as field-programmable gate arrays (FPGAs) and digital signal processors (DSPs), to traditional computing platforms, such as microprocessors. Even though the radiation environment is relatively benign, these devices could be susceptible to single-event effects. In this paper, we will present radiation data for high-performance computing devices in a accelerated neutron environment. These devices include a multi-core digital signal processor, two field-programmable gate arrays, and a microprocessor. From these results, we found that all of these devices are suitable for many airplane environments without reliability problems.

  2. A High Performance COTS Based Computer Architecture

    NASA Astrophysics Data System (ADS)

    Patte, Mathieu; Grimoldi, Raoul; Trautner, Roland

    2014-08-01

    Using Commercial Off The Shelf (COTS) electronic components for space applications is a long standing idea. Indeed the difference in processing performance and energy efficiency between radiation hardened components and COTS components is so important that COTS components are very attractive for use in mass and power constrained systems. However using COTS components in space is not straightforward as one must account with the effects of the space environment on the COTS components behavior. In the frame of the ESA funded activity called High Performance COTS Based Computer, Airbus Defense and Space and its subcontractor OHB CGS have developed and prototyped a versatile COTS based architecture for high performance processing. The rest of the paper is organized as follows: in a first section we will start by recapitulating the interests and constraints of using COTS components for space applications; then we will briefly describe existing fault mitigation architectures and present our solution for fault mitigation based on a component called the SmartIO; in the last part of the paper we will describe the prototyping activities executed during the HiP CBC project.

  3. Strategy Guideline: Partnering for High Performance Homes

    SciTech Connect

    Prahl, D.

    2013-01-01

    High performance houses require a high degree of coordination and have significant interdependencies between various systems in order to perform properly, meet customer expectations, and minimize risks for the builder. Responsibility for the key performance attributes is shared across the project team and can be well coordinated through advanced partnering strategies. For high performance homes, traditional partnerships need to be matured to the next level and be expanded to all members of the project team including trades, suppliers, manufacturers, HERS raters, designers, architects, and building officials as appropriate. In an environment where the builder is the only source of communication between trades and consultants and where relationships are, in general, adversarial as opposed to cooperative, the chances of any one building system to fail are greater. Furthermore, it is much harder for the builder to identify and capitalize on synergistic opportunities. Partnering can help bridge the cross-functional aspects of the systems approach and achieve performance-based criteria. Critical success factors for partnering include support from top management, mutual trust, effective and open communication, effective coordination around common goals, team building, appropriate use of an outside facilitator, a partnering charter progress toward common goals, an effective problem-solving process, long-term commitment, continuous improvement, and a positive experience for all involved.

  4. New high-performance complementary bipolar technology featuring 45-GHz NPN and 20-GHz PNP devices

    NASA Astrophysics Data System (ADS)

    Wilson, Martin C.; Osborne, Peter H.; Thomas, Simon; Cook, Trevor

    1999-09-01

    A new high performance silicon complementary bipolar technology is introduced. In addition a novel process 'enhancement' technique based on a local oxidation is described and demonstrated and NPN devices with cut-off frequencies up to 45GHz and PNP devices of 20GHz have been fabricate. We propose that the technique we have used will allow specific transistors within a circuit to be optimized, as required.

  5. SOI layout decomposition for double patterning lithography on high-performance computer platforms

    NASA Astrophysics Data System (ADS)

    Verstov, Vladimir; Zinchenko, Lyudmila; Makarchuk, Vladimir

    2014-12-01

    In the paper silicon on insulator layout decomposition algorithms for the double patterning lithography on high performance computing platforms are discussed. Our approach is based on the use of a contradiction graph and a modified concurrent breadth-first search algorithm. We evaluate our technique on 45 nm Nangate Open Cell Library including non-Manhattan geometry. Experimental results show that our soft computing algorithms decompose layout successfully and a minimal distance between polygons in layout is increased.

  6. Stochastic multiscale modeling of polycrystalline materials

    NASA Astrophysics Data System (ADS)

    Wen, Bin

    Mechanical properties of engineering materials are sensitive to the underlying random microstructure. Quantification of mechanical property variability induced by microstructure variation is essential for the prediction of extreme properties and microstructure-sensitive design of materials. Recent advances in high throughput characterization of polycrystalline microstructures have resulted in huge data sets of microstructural descriptors and image snapshots. To utilize these large scale experimental data for computing the resulting variability of macroscopic properties, appropriate mathematical representation of microstructures is needed. By exploring the space containing all admissible microstructures that are statistically similar to the available data, one can estimate the distribution/envelope of possible properties by employing efficient stochastic simulation methodologies along with robust physics-based deterministic simulators. The focus of this thesis is on the construction of low-dimensional representations of random microstructures and the development of efficient physics-based simulators for polycrystalline materials. By adopting appropriate stochastic methods, such as Monte Carlo and Adaptive Sparse Grid Collocation methods, the variability of microstructure-sensitive properties of polycrystalline materials is investigated. The primary outcomes of this thesis include: (1) Development of data-driven reduced-order representations of microstructure variations to construct the admissible space of random polycrystalline microstructures. (2) Development of accurate and efficient physics-based simulators for the estimation of material properties based on mesoscale microstructures. (3) Investigating property variability of polycrystalline materials using efficient stochastic simulation methods in combination with the above two developments. The uncertainty quantification framework developed in this work integrates information science and materials science, and

  7. Optics of high-performance electron microscopes.

    PubMed

    Rose, H H

    2008-01-01

    During recent years, the theory of charged particle optics together with advances in fabrication tolerances and experimental techniques has lead to very significant advances in high-performance electron microscopes. Here, we will describe which theoretical tools, inventions and designs have driven this development. We cover the basic theory of higher-order electron optics and of image formation in electron microscopes. This leads to a description of different methods to correct aberrations by multipole fields and to a discussion of the most advanced design that take advantage of these techniques. The theory of electron mirrors is developed and it is shown how this can be used to correct aberrations and to design energy filters. Finally, different types of energy filters are described.

  8. A high performance architecture for prolog

    SciTech Connect

    Dobry, T.

    1987-01-01

    Artificial Intelligence is entering the mainstream of computer applications and as techniques are developed and integrated into a wide variety of areas they are beginning to tax the processing power of conventional architecture. To meet this demand, specialized architectures providing support for the unique features of symbolic processing languages are emerging. The goal of the research presented here is to show that an architecture specialized for Prolog can achieve a ten-fold improvement in performance over conventional general-purpose architecture, and presents such an architecture for high performance execution of Prolog programs. The architecture is based on the abstract machine description known as the Warren Abstract Machine (WAM). The execution model of the WAM is described and extended to provide a complete Instruction Set Architecture (ISA) for Prolog known as the PLM. The ISA is then realized in a microarchitecture and finally in a hardware design.

  9. High-performance architecture for Prolog

    SciTech Connect

    Dobry, T.P.

    1987-01-01

    Artificial intelligence is entering the mainstream of computer applications and, as techniques are developed and integrated into a wide variety of areas, they are beginning to tax the processing power of conventional architectures. To meet this demand, specialized architectures providing support for the unique features of symbolic processing languages are emerging. The goal of the research presented here is to show that an architecture specialized for Prolog can achieve a tenfold improvement in performance over conventional, general-purpose architectures. This dissertation presents such an architecture for high performance execution of Prolog programs. The architecture is based on the abstract machine description introduced by David H.D. Warren known as the Warren Abstract Machine (WAM). The execution model of the WAM is described and extended to provide a complete Instruction Set Architecture (ISA) for Prolog known as the PLM. This ISA is then realized in a microarchitecture and finally in a hardware design.

  10. High performance stepper motors for space mechanisms

    NASA Astrophysics Data System (ADS)

    Sega, Patrick; Estevenon, Christine

    1995-05-01

    Hybrid stepper motors are very well adapted to high performance space mechanisms. They are very simple to operate and are often used for accurate positioning and for smooth rotations. In order to fulfill these requirements, the motor torque, its harmonic content, and the magnetic parasitic torque have to be properly designed. Only finite element computations can provide enough accuracy to determine the toothed structures' magnetic permeance, whose derivative function leads to the torque. It is then possible to design motors with a maximum torque capability or with the most reduced torque harmonic content (less than 3 percent of fundamental). These later motors are dedicated to applications where a microstep or a synchronous mode is selected for minimal dynamic disturbances. In every case, the capability to convert electrical power into torque is much higher than on DC brushless motors.

  11. Parallel Algebraic Multigrid Methods - High Performance Preconditioners

    SciTech Connect

    Yang, U M

    2004-11-11

    The development of high performance, massively parallel computers and the increasing demands of computationally challenging applications have necessitated the development of scalable solvers and preconditioners. One of the most effective ways to achieve scalability is the use of multigrid or multilevel techniques. Algebraic multigrid (AMG) is a very efficient algorithm for solving large problems on unstructured grids. While much of it can be parallelized in a straightforward way, some components of the classical algorithm, particularly the coarsening process and some of the most efficient smoothers, are highly sequential, and require new parallel approaches. This chapter presents the basic principles of AMG and gives an overview of various parallel implementations of AMG, including descriptions of parallel coarsening schemes and smoothers, some numerical results as well as references to existing software packages.

  12. High-performance nanostructured MR contrast probes

    PubMed Central

    Hu, Fengqin; Joshi, Hrushikesh M.; Dravid, Vinayak P.; Meade, Thomas J.

    2011-01-01

    Magnetic resonance imaging (MRI) has become a powerful technique in biological molecular imaging and clinical diagnosis. With the rapid progress in nanoscale science and technology, nanostructure-based MR contrast agents are undergoing rapid development. This is in part due to the tuneable magnetic and cellular uptake properties, large surface area for conjugation and favourable biodistribution. In this review, we describe our recent progress in the development of high-performance nanostructured MR contrast agents. Specifically, we report on Gd-enriched nanostructured probes that exhibit T1 MR contrast and superparamagnetic Fe3O4 and CoFe2O4 nanostructures that display T2 MR contrast enhancement. The effects of nanostructure size, shape, assembly and surface modification on relaxivity are described. The potential of these contrast agents for in vitro and in vivo MR imaging with respect to colloidal stability under physiological conditions, biocompatibility, and surface functionality are also evaluated. PMID:20694208

  13. Optics of high-performance electron microscopes*

    PubMed Central

    Rose, H H

    2008-01-01

    During recent years, the theory of charged particle optics together with advances in fabrication tolerances and experimental techniques has lead to very significant advances in high-performance electron microscopes. Here, we will describe which theoretical tools, inventions and designs have driven this development. We cover the basic theory of higher-order electron optics and of image formation in electron microscopes. This leads to a description of different methods to correct aberrations by multipole fields and to a discussion of the most advanced design that take advantage of these techniques. The theory of electron mirrors is developed and it is shown how this can be used to correct aberrations and to design energy filters. Finally, different types of energy filters are described. PMID:27877933

  14. High-Performance, Low Environmental Impact Refrigerants

    NASA Technical Reports Server (NTRS)

    McCullough, E. T.; Dhooge, P. M.; Glass, S. M.; Nimitz, J. S.

    2001-01-01

    Refrigerants used in process and facilities systems in the US include R-12, R-22, R-123, R-134a, R-404A, R-410A, R-500, and R-502. All but R-134a, R-404A, and R-410A contain ozone-depleting substances that will be phased out under the Montreal Protocol. Some of the substitutes do not perform as well as the refrigerants they are replacing, require new equipment, and have relatively high global warming potentials (GWPs). New refrigerants are needed that addresses environmental, safety, and performance issues simultaneously. In efforts sponsored by Ikon Corporation, NASA Kennedy Space Center (KSC), and the US Environmental Protection Agency (EPA), ETEC has developed and tested a new class of refrigerants, the Ikon (registered) refrigerants, based on iodofluorocarbons (IFCs). These refrigerants are nonflammable, have essentially zero ozone-depletion potential (ODP), low GWP, high performance (energy efficiency and capacity), and can be dropped into much existing equipment.

  15. High performance stepper motors for space mechanisms

    NASA Technical Reports Server (NTRS)

    Sega, Patrick; Estevenon, Christine

    1995-01-01

    Hybrid stepper motors are very well adapted to high performance space mechanisms. They are very simple to operate and are often used for accurate positioning and for smooth rotations. In order to fulfill these requirements, the motor torque, its harmonic content, and the magnetic parasitic torque have to be properly designed. Only finite element computations can provide enough accuracy to determine the toothed structures' magnetic permeance, whose derivative function leads to the torque. It is then possible to design motors with a maximum torque capability or with the most reduced torque harmonic content (less than 3 percent of fundamental). These later motors are dedicated to applications where a microstep or a synchronous mode is selected for minimal dynamic disturbances. In every case, the capability to convert electrical power into torque is much higher than on DC brushless motors.

  16. High Performance Fortran for Aerospace Applications

    NASA Technical Reports Server (NTRS)

    Mehrotra, Piyush; Zima, Hans; Bushnell, Dennis M. (Technical Monitor)

    2000-01-01

    This paper focuses on the use of High Performance Fortran (HPF) for important classes of algorithms employed in aerospace applications. HPF is a set of Fortran extensions designed to provide users with a high-level interface for programming data parallel scientific applications, while delegating to the compiler/runtime system the task of generating explicitly parallel message-passing programs. We begin by providing a short overview of the HPF language. This is followed by a detailed discussion of the efficient use of HPF for applications involving multiple structured grids such as multiblock and adaptive mesh refinement (AMR) codes as well as unstructured grid codes. We focus on the data structures and computational structures used in these codes and on the high-level strategies that can be expressed in HPF to optimally exploit the parallelism in these algorithms.

  17. High performance robotic traverse of desert terrain.

    SciTech Connect

    Whittaker, William

    2004-09-01

    This report presents tentative innovations to enable unmanned vehicle guidance for a class of off-road traverse at sustained speeds greater than 30 miles per hour. Analyses and field trials suggest that even greater navigation speeds might be achieved. The performance calls for innovation in mapping, perception, planning and inertial-referenced stabilization of components, hosted aboard capable locomotion. The innovations are motivated by the challenge of autonomous ground vehicle traverse of 250 miles of desert terrain in less than 10 hours, averaging 30 miles per hour. GPS coverage is assumed to be available with localized blackouts. Terrain and vegetation are assumed to be akin to that of the Mojave Desert. This terrain is interlaced with networks of unimproved roads and trails, which are a key to achieving the high performance mapping, planning and navigation that is presented here.

  18. PREFACE: High Performance Computing Symposium 2011

    NASA Astrophysics Data System (ADS)

    Talon, Suzanne; Mousseau, Normand; Peslherbe, Gilles; Bertrand, François; Gauthier, Pierre; Kadem, Lyes; Moitessier, Nicolas; Rouleau, Guy; Wittig, Rod

    2012-02-01

    HPCS (High Performance Computing Symposium) is a multidisciplinary conference that focuses on research involving High Performance Computing and its application. Attended by Canadian and international experts and renowned researchers in the sciences, all areas of engineering, the applied sciences, medicine and life sciences, mathematics, the humanities and social sciences, it is Canada's pre-eminent forum for HPC. The 25th edition was held in Montréal, at the Université du Québec à Montréal, from 15-17 June and focused on HPC in Medical Science. The conference was preceded by tutorials held at Concordia University, where 56 participants learned about HPC best practices, GPU computing, parallel computing, debugging and a number of high-level languages. 274 participants from six countries attended the main conference, which involved 11 invited and 37 contributed oral presentations, 33 posters, and an exhibit hall with 16 booths from our sponsors. The work that follows is a collection of papers presented at the conference covering HPC topics ranging from computer science to bioinformatics. They are divided here into four sections: HPC in Engineering, Physics and Materials Science, HPC in Medical Science, HPC Enabling to Explore our World and New Algorithms for HPC. We would once more like to thank the participants and invited speakers, the members of the Scientific Committee, the referees who spent time reviewing the papers and our invaluable sponsors. To hear the invited talks and learn about 25 years of HPC development in Canada visit the Symposium website: http://2011.hpcs.ca/lang/en/conference/keynote-speakers/ Enjoy the excellent papers that follow, and we look forward to seeing you in Vancouver for HPCS 2012! Gilles Peslherbe Chair of the Scientific Committee Normand Mousseau Co-Chair of HPCS 2011 Suzanne Talon Chair of the Organizing Committee UQAM Sponsors The PDF also contains photographs from the conference banquet.

  19. Roadmap on silicon photonics

    NASA Astrophysics Data System (ADS)

    Thomson, David; Zilkie, Aaron; Bowers, John E.; Komljenovic, Tin; Reed, Graham T.; Vivien, Laurent; Marris-Morini, Delphine; Cassan, Eric; Virot, Léopold; Fédéli, Jean-Marc; Hartmann, Jean-Michel; Schmid, Jens H.; Xu, Dan-Xia; Boeuf, Frédéric; O'Brien, Peter; Mashanovich, Goran Z.; Nedeljkovic, M.

    2016-07-01

    Silicon photonics research can be dated back to the 1980s. However, the previous decade has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology that is poised to revolutionize a number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon photonics is the ability to use CMOS-like fabrication resulting in high-volume production at low cost. This is a key enabling factor for bringing photonics to a range of technology areas where the costs of implementation using traditional photonic elements such as those used for the telecommunications industry would be prohibitive. Silicon does however have a number of shortcomings as a photonic material. In its basic form it is not an ideal material in which to produce light sources, optical modulators or photodetectors for example. A wealth of research effort from both academia and industry in recent years has fueled the demonstration of multiple solutions to these and other problems, and as time progresses new approaches are increasingly being conceived. It is clear that silicon photonics has a bright future. However, with a growing number of approaches available, what will the silicon photonic integrated circuit of the future look like? This roadmap on silicon photonics delves into the different technology and application areas of the field giving an insight into the state-of-the-art as well as current and future challenges faced by researchers worldwide. Contributions authored by experts from both industry and academia provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths. Advances in science and technology required to meet challenges faced by the field in each of these areas are also addressed together with

  20. Silicon Hot-Electron Bolometers

    NASA Technical Reports Server (NTRS)

    Stevenson, Thomas R.; Hsieh, Wen-Ting; Mitchell, Robert R.; Isenberg, Hal D.; Stahle, Carl M.; Cao, Nga T.; Schneider, Gideon; Travers, Douglas E.; Moseley, S. Harvey; Wollack, Edward J.

    2004-01-01

    We discuss a new type of direct detector, a silicon hot-electron bolometer, for measurements in the far-infrared and submillimeter spectral ranges. High performance bolometers can be made using the electron-phonon conductance in heavily doped silicon to provide thermal isolation from the cryogenic bath. Noise performance is expected to be near thermodynamic limits, allowing background limited performance for many far infrared and submillimeter photometric and spectroscopic applications.

  1. Way Forward for High Performance Payload Processing Development

    NASA Astrophysics Data System (ADS)

    Notebaert, Olivier; Franklin, John; Lefftz, Vincent; Moreno, Jose; Patte, Mathieu; Syed, Mohsin; Wagner, Arnaud

    2012-08-01

    Payload processing is facing technological challenges due to the large increase of performance requirements of future scientific, observation and telecom missions as well as the future instruments technologies capturing much larger amount of data. For several years, with the perspective of higher performance together with the planned obsolescence of solutions covering the current needs, ESA and the European space industry has been developing several technology solutions. Silicon technologies, radiation mitigation techniques and innovative functional architectures are developed with the goal of designing future space qualified processing devices with a much higher level of performance than today. The fast growing commercial market application have developed very attractive technologies but which are not fully suitable with respect to their tolerance to space environment. Without the financial capacity to explore and develop all possible technology paths, a specific and global approach is required to cover the future mission needs and their necessary performance targets with effectiveness.The next sections describe main issues and priorities and provides further detailed relevant for this approach covering the high performance processing technology.

  2. Short circuit current in indium tin oxide/silicon solar cells

    NASA Astrophysics Data System (ADS)

    Singh, R.

    1980-09-01

    The short-circuit current density of indium tin oxide/single and polycrystalline silicon solar cells reported by Schunck and Coche (1979) is much higher than other silicon solar cells. It is shown that the short-circuit current density reported in the above reference does not represent the true value of these devices.

  3. DEVICE TECHNOLOGY. Nanomaterials in transistors: From high-performance to thin-film applications.

    PubMed

    Franklin, Aaron D

    2015-08-14

    For more than 50 years, silicon transistors have been continuously shrunk to meet the projections of Moore's law but are now reaching fundamental limits on speed and power use. With these limits at hand, nanomaterials offer great promise for improving transistor performance and adding new applications through the coming decades. With different transistors needed in everything from high-performance servers to thin-film display backplanes, it is important to understand the targeted application needs when considering new material options. Here the distinction between high-performance and thin-film transistors is reviewed, along with the benefits and challenges to using nanomaterials in such transistors. In particular, progress on carbon nanotubes, as well as graphene and related materials (including transition metal dichalcogenides and X-enes), outlines the advances and further research needed to enable their use in transistors for high-performance computing, thin films, or completely new technologies such as flexible and transparent devices.

  4. Improving UV Resistance of High Performance Fibers

    NASA Astrophysics Data System (ADS)

    Hassanin, Ahmed

    High performance fibers are characterized by their superior properties compared to the traditional textile fibers. High strength fibers have high modules, high strength to weight ratio, high chemical resistance, and usually high temperature resistance. It is used in application where superior properties are needed such as bulletproof vests, ropes and cables, cut resistant products, load tendons for giant scientific balloons, fishing rods, tennis racket strings, parachute cords, adhesives and sealants, protective apparel and tire cords. Unfortunately, Ultraviolet (UV) radiation causes serious degradation to the most of high performance fibers. UV lights, either natural or artificial, cause organic compounds to decompose and degrade, because the energy of the photons of UV light is high enough to break chemical bonds causing chain scission. This work is aiming at achieving maximum protection of high performance fibers using sheathing approaches. The sheaths proposed are of lightweight to maintain the advantage of the high performance fiber that is the high strength to weight ratio. This study involves developing three different types of sheathing. The product of interest that need be protected from UV is braid from PBO. First approach is extruding a sheath from Low Density Polyethylene (LDPE) loaded with different rutile TiO2 % nanoparticles around the braid from the PBO. The results of this approach showed that LDPE sheath loaded with 10% TiO2 by weight achieved the highest protection compare to 0% and 5% TiO2. The protection here is judged by strength loss of PBO. This trend noticed in different weathering environments, where the sheathed samples were exposed to UV-VIS radiations in different weatheromter equipments as well as exposure to high altitude environment using NASA BRDL balloon. The second approach is focusing in developing a protective porous membrane from polyurethane loaded with rutile TiO2 nanoparticles. Membrane from polyurethane loaded with 4

  5. NCI's Transdisciplinary High Performance Scientific Data Platform

    NASA Astrophysics Data System (ADS)

    Evans, Ben; Antony, Joseph; Bastrakova, Irina; Car, Nicholas; Cox, Simon; Druken, Kelsey; Evans, Bradley; Fraser, Ryan; Ip, Alex; Kemp, Carina; King, Edward; Minchin, Stuart; Larraondo, Pablo; Pugh, Tim; Richards, Clare; Santana, Fabiana; Smillie, Jon; Trenham, Claire; Wang, Jingbo; Wyborn, Lesley

    2016-04-01

    The Australian National Computational Infrastructure (NCI) manages Earth Systems data collections sourced from several domains and organisations onto a single High Performance Data (HPD) Node to further Australia's national priority research and innovation agenda. The NCI HPD Node has rapidly established its value, currently managing over 10 PBytes of datasets from collections that span a wide range of disciplines including climate, weather, environment, geoscience, geophysics, water resources and social sciences. Importantly, in order to facilitate broad user uptake, maximise reuse and enable transdisciplinary access through software and standardised interfaces, the datasets, associated information systems and processes have been incorporated into the design and operation of a unified platform that NCI has called, the National Environmental Research Data Interoperability Platform (NERDIP). The key goal of the NERDIP is to regularise data access so that it is easily discoverable, interoperable for different domains and enabled for high performance methods. It adopts and implements international standards and data conventions, and promotes scientific integrity within a high performance computing and data analysis environment. NCI has established a rich and flexible computing environment to access to this data, through the NCI supercomputer; a private cloud that supports both domain focused virtual laboratories and in-common interactive analysis interfaces; as well as remotely through scalable data services. Data collections of this importance must be managed with careful consideration of both their current use and the needs of the end-communities, as well as its future potential use, such as transitioning to more advanced software and improved methods. It is therefore critical that the data platform is both well-managed and trusted for stable production use (including transparency and reproducibility), agile enough to incorporate new technological advances and

  6. SISYPHUS: A high performance seismic inversion factory

    NASA Astrophysics Data System (ADS)

    Gokhberg, Alexey; Simutė, Saulė; Boehm, Christian; Fichtner, Andreas

    2016-04-01

    In the recent years the massively parallel high performance computers became the standard instruments for solving the forward and inverse problems in seismology. The respective software packages dedicated to forward and inverse waveform modelling specially designed for such computers (SPECFEM3D, SES3D) became mature and widely available. These packages achieve significant computational performance and provide researchers with an opportunity to solve problems of bigger size at higher resolution within a shorter time. However, a typical seismic inversion process contains various activities that are beyond the common solver functionality. They include management of information on seismic events and stations, 3D models, observed and synthetic seismograms, pre-processing of the observed signals, computation of misfits and adjoint sources, minimization of misfits, and process workflow management. These activities are time consuming, seldom sufficiently automated, and therefore represent a bottleneck that can substantially offset performance benefits provided by even the most powerful modern supercomputers. Furthermore, a typical system architecture of modern supercomputing platforms is oriented towards the maximum computational performance and provides limited standard facilities for automation of the supporting activities. We present a prototype solution that automates all aspects of the seismic inversion process and is tuned for the modern massively parallel high performance computing systems. We address several major aspects of the solution architecture, which include (1) design of an inversion state database for tracing all relevant aspects of the entire solution process, (2) design of an extensible workflow management framework, (3) integration with wave propagation solvers, (4) integration with optimization packages, (5) computation of misfits and adjoint sources, and (6) process monitoring. The inversion state database represents a hierarchical structure with

  7. The curing of high-performance concrete

    NASA Astrophysics Data System (ADS)

    Meeks, Kenneth Wayne

    This dissertation describes the latest information, technology, and research on the curing of high performance concrete (HPC). Expanded somewhat beyond the scope of HPC, it examines the current body of knowledge on the effects of various curing regimes on concrete. The significance and importance of curing are discussed as well as the various definitions of HPC. The current curing requirements, standards, and criteria as proposed by ACI, as well as those of other countries, are reviewed and discussed. The current prescriptive curing requirements may not be applicable to high performance concrete. The research program reported in this dissertation looked at one approach to development of curing criteria for this relatively new class of concrete. The program applies some of the basic concepts of the methodology developed by the German researcher, H. K. Hilsdorf, to the curing of HPC with the objective to determine minimum curing durations for adequate strength development. The approach is to determine what fraction of the standard-cured 28-day strength has to be attained at the end of the curing period to assure that the design strength is attained in the interior of the member. An innovative direct tension test was developed to measure the strength at specific depths from the drying surface of small mortar cylinders (50 x 127 mm (2 x 5 in.)). Two mortar mixtures were investigated, w/c = 0.30 and w/c = 0.45, and three different moist curing regimes, 1-day, 3-day, and 7-day. Specimens were stored in two environmental chambers at 25sp°C, 50% RH; and 25sp°C, 70% RH, until testing at the age of 28 days. Direct tensile tests were conducted using steel disks epoxied to the ends of the specimens. Also, the penetration of the drying front was calculated from the drying data using porosity and degree of hydration relationships. The major observation from these tests was that adequate strength is attained in both mortar mixtures with only one day of moist curing. The drying

  8. High Performance Computing CFRD -- Final Technial Report

    SciTech Connect

    Hope Forsmann; Kurt Hamman

    2003-01-01

    The Bechtel Waste Treatment Project (WTP), located in Richland, WA, is comprised of many processes containing complex physics. Accurate analyses of the underlying physics of these processes is needed to reduce the amount of added costs during and after construction that are due to unknown process behavior. The WTP will have tight operating margins in order to complete the treatment of the waste on schedule. The combination of tight operating constraints coupled with complex physical processes requires analysis methods that are more accurate than traditional approaches. This study is focused specifically on multidimensional computer aided solutions. There are many skills and tools required to solve engineering problems. Many physical processes are governed by nonlinear partial differential equations. These governing equations have few, if any, closed form solutions. Past and present solution methods require assumptions to reduce these equations to solvable forms. Computational methods take the governing equations and solve them directly on a computational grid. This ability to approach the equations in their exact form reduces the number of assumptions that must be made. This approach increases the accuracy of the solution and its applicability to the problem at hand. Recent advances in computer technology have allowed computer simulations to become an essential tool for problem solving. In order to perform computer simulations as quickly and accurately as possible, both hardware and software must be evaluated. With regards to hardware, the average consumer personal computers (PCs) are not configured for optimal scientific use. Only a few vendors create high performance computers to satisfy engineering needs. Software must be optimized for quick and accurate execution. Operating systems must utilize the hardware efficiently while supplying the software with seamless access to the computer’s resources. From the perspective of Bechtel Corporation and the Idaho

  9. Modeling of polycrystalline thin film solar cells

    NASA Astrophysics Data System (ADS)

    Fahrenbruch, Alan L.

    1999-03-01

    This paper describes modeling polycrystalline thin-film solar cells using the program AMPS-1D1 to visualize the relationships between the many variables involved. These simulations are steps toward two dimensional modeling the effects of grain boundaries in polycrystalline cells. Although this paper describes results for the CdS/CdTe cell, the ideas presented here are applicable to copper-indium-gallium selenide (CIGS) cells as well as other types of cells. Results of these one-dimensional simulations are presented: (a) the duplication of experimentally observed cell parameters, (b) the effects of back-contact potential barrier height and its relation to stressing the cell, (c) the effects of the depletion layer width in the CdTe layer on cell parameters, and (d) the effects of CdS layer thickness on the cell parameters. Experience using the software is also described.

  10. The design of high-performance gliders

    NASA Technical Reports Server (NTRS)

    Mueller, B.; Heuermann, V.

    1985-01-01

    A high-performance glider is defined as a glider which has been designed to carry the pilot in a minimum of time a given distance, taking into account conditions which are as conveniently as possible. The present investigation has the objective to show approaches for enhancing the cross-country flight cruising speed, giving attention to the difficulties which the design engineer will have to overcome. The characteristics of the cross-country flight and their relation to the cruising speed are discussed, and a description is provided of mathematical expressions concerning the cruising speed, the sinking speed, and the optimum gliding speed. The effect of aspect ratio and wing loading on the cruising speed is illustrated with the aid of a graph. Trends in glider development are explored, taking into consideration the design of laminar profiles, the reduction of profile-related drag by plain flaps, and the variation of wing loading during the flight. A number of suggestions are made for obtaining gliders with improved performance.

  11. High performance vapour-cell frequency standards

    NASA Astrophysics Data System (ADS)

    Gharavipour, M.; Affolderbach, C.; Kang, S.; Bandi, T.; Gruet, F.; Pellaton, M.; Mileti, G.

    2016-06-01

    We report our investigations on a compact high-performance rubidium (Rb) vapour-cell clock based on microwave-optical double-resonance (DR). These studies are done in both DR continuous-wave (CW) and Ramsey schemes using the same Physics Package (PP), with the same Rb vapour cell and a magnetron-type cavity with only 45 cm3 external volume. In the CW-DR scheme, we demonstrate a DR signal with a contrast of 26% and a linewidth of 334 Hz; in Ramsey-DR mode Ramsey signals with higher contrast up to 35% and a linewidth of 160 Hz have been demonstrated. Short-term stabilities of 1.4×10-13 τ-1/2 and 2.4×10-13 τ-1/2 are measured for CW-DR and Ramsey-DR schemes, respectively. In the Ramsey-DR operation, thanks to the separation of light and microwave interactions in time, the light-shift effect has been suppressed which allows improving the long-term clock stability as compared to CW-DR operation. Implementations in miniature atomic clocks are considered.

  12. High performance techniques for space mission scheduling

    NASA Technical Reports Server (NTRS)

    Smith, Stephen F.

    1994-01-01

    In this paper, we summarize current research at Carnegie Mellon University aimed at development of high performance techniques and tools for space mission scheduling. Similar to prior research in opportunistic scheduling, our approach assumes the use of dynamic analysis of problem constraints as a basis for heuristic focusing of problem solving search. This methodology, however, is grounded in representational assumptions more akin to those adopted in recent temporal planning research, and in a problem solving framework which similarly emphasizes constraint posting in an explicitly maintained solution constraint network. These more general representational assumptions are necessitated by the predominance of state-dependent constraints in space mission planning domains, and the consequent need to integrate resource allocation and plan synthesis processes. First, we review the space mission problems we have considered to date and indicate the results obtained in these application domains. Next, we summarize recent work in constraint posting scheduling procedures, which offer the promise of better future solutions to this class of problems.

  13. Development of high performance BWR spacer

    SciTech Connect

    Morooka, Shinichi; Shirakawa, Kenetu; Mitutake, Tohru; Yamamoto, Yasushi; Yano, Takashi; Kimura, Jiro

    1996-07-01

    The spacer has a significant effect on thermal hydraulic performance of BWR fuel assembly. The purpose of this study is to develop a new BWR spacer with high critical power and low pressure drop performance. The developed high performance spacer is a ferrule type spacer with twisted tape and improved flow tab. This spacer is called CYCLONE spacer. Critical power and pressure drop have been measured at BEST (BWR Experimental Loop for Stability and Transient test) of Toshiba Corporation. The test bundle consists of electrically heated rods in a 4x4 array configuration. These heater rods are indirectly heated. The heated length and outer diameter of the heater rod, as well as the number and the axial locations of the spacers, are the same as for those for a BWR fuel assembly. The axial power shape is stepped cosine (1.4 of the maximum peaking factor). Two test assemblies with different radial power distribution have been used. One test assembly has the maximum power rods at the center of the test assembly and the other has the maximum power rods near the channel wall. The results show that the critical power performance of CYCLONE spacer is 10 to 25 % higher than that of the ferrule spacers, while the pressure drop for CYCLONE spacer is nearly equal to that of the ferrule spacer.

  14. Low-Cost High-Performance MRI

    PubMed Central

    Sarracanie, Mathieu; LaPierre, Cristen D.; Salameh, Najat; Waddington, David E. J.; Witzel, Thomas; Rosen, Matthew S.

    2015-01-01

    Magnetic Resonance Imaging (MRI) is unparalleled in its ability to visualize anatomical structure and function non-invasively with high spatial and temporal resolution. Yet to overcome the low sensitivity inherent in inductive detection of weakly polarized nuclear spins, the vast majority of clinical MRI scanners employ superconducting magnets producing very high magnetic fields. Commonly found at 1.5–3 tesla (T), these powerful magnets are massive and have very strict infrastructure demands that preclude operation in many environments. MRI scanners are costly to purchase, site, and maintain, with the purchase price approaching $1 M per tesla (T) of magnetic field. We present here a remarkably simple, non-cryogenic approach to high-performance human MRI at ultra-low magnetic field, whereby modern under-sampling strategies are combined with fully-refocused dynamic spin control using steady-state free precession techniques. At 6.5 mT (more than 450 times lower than clinical MRI scanners) we demonstrate (2.5 × 3.5 × 8.5) mm3 imaging resolution in the living human brain using a simple, open-geometry electromagnet, with 3D image acquisition over the entire brain in 6 minutes. We contend that these practical ultra-low magnetic field implementations of MRI (<10 mT) will complement traditional MRI, providing clinically relevant images and setting new standards for affordable (<$50,000) and robust portable devices. PMID:26469756

  15. High performance graphene oxide based rubber composites.

    PubMed

    Mao, Yingyan; Wen, Shipeng; Chen, Yulong; Zhang, Fazhong; Panine, Pierre; Chan, Tung W; Zhang, Liqun; Liang, Yongri; Liu, Li

    2013-01-01

    In this paper, graphene oxide/styrene-butadiene rubber (GO/SBR) composites with complete exfoliation of GO sheets were prepared by aqueous-phase mixing of GO colloid with SBR latex and a small loading of butadiene-styrene-vinyl-pyridine rubber (VPR) latex, followed by their co-coagulation. During co-coagulation, VPR not only plays a key role in the prevention of aggregation of GO sheets but also acts as an interface-bridge between GO and SBR. The results demonstrated that the mechanical properties of the GO/SBR composite with 2.0 vol.% GO is comparable with those of the SBR composite reinforced with 13.1 vol.% of carbon black (CB), with a low mass density and a good gas barrier ability to boot. The present work also showed that GO-silica/SBR composite exhibited outstanding wear resistance and low-rolling resistance which make GO-silica/SBR very competitive for the green tire application, opening up enormous opportunities to prepare high performance rubber composites for future engineering applications.

  16. High Performance Graphene Oxide Based Rubber Composites

    NASA Astrophysics Data System (ADS)

    Mao, Yingyan; Wen, Shipeng; Chen, Yulong; Zhang, Fazhong; Panine, Pierre; Chan, Tung W.; Zhang, Liqun; Liang, Yongri; Liu, Li

    2013-08-01

    In this paper, graphene oxide/styrene-butadiene rubber (GO/SBR) composites with complete exfoliation of GO sheets were prepared by aqueous-phase mixing of GO colloid with SBR latex and a small loading of butadiene-styrene-vinyl-pyridine rubber (VPR) latex, followed by their co-coagulation. During co-coagulation, VPR not only plays a key role in the prevention of aggregation of GO sheets but also acts as an interface-bridge between GO and SBR. The results demonstrated that the mechanical properties of the GO/SBR composite with 2.0 vol.% GO is comparable with those of the SBR composite reinforced with 13.1 vol.% of carbon black (CB), with a low mass density and a good gas barrier ability to boot. The present work also showed that GO-silica/SBR composite exhibited outstanding wear resistance and low-rolling resistance which make GO-silica/SBR very competitive for the green tire application, opening up enormous opportunities to prepare high performance rubber composites for future engineering applications.

  17. High Performance Graphene Oxide Based Rubber Composites

    PubMed Central

    Mao, Yingyan; Wen, Shipeng; Chen, Yulong; Zhang, Fazhong; Panine, Pierre; Chan, Tung W.; Zhang, Liqun; Liang, Yongri; Liu, Li

    2013-01-01

    In this paper, graphene oxide/styrene-butadiene rubber (GO/SBR) composites with complete exfoliation of GO sheets were prepared by aqueous-phase mixing of GO colloid with SBR latex and a small loading of butadiene-styrene-vinyl-pyridine rubber (VPR) latex, followed by their co-coagulation. During co-coagulation, VPR not only plays a key role in the prevention of aggregation of GO sheets but also acts as an interface-bridge between GO and SBR. The results demonstrated that the mechanical properties of the GO/SBR composite with 2.0 vol.% GO is comparable with those of the SBR composite reinforced with 13.1 vol.% of carbon black (CB), with a low mass density and a good gas barrier ability to boot. The present work also showed that GO-silica/SBR composite exhibited outstanding wear resistance and low-rolling resistance which make GO-silica/SBR very competitive for the green tire application, opening up enormous opportunities to prepare high performance rubber composites for future engineering applications. PMID:23974435

  18. RISC Processors and High Performance Computing

    NASA Technical Reports Server (NTRS)

    Saini, Subhash; Bailey, David H.; Lasinski, T. A. (Technical Monitor)

    1995-01-01

    In this tutorial, we will discuss top five current RISC microprocessors: The IBM Power2, which is used in the IBM RS6000/590 workstation and in the IBM SP2 parallel supercomputer, the DEC Alpha, which is in the DEC Alpha workstation and in the Cray T3D; the MIPS R8000, which is used in the SGI Power Challenge; the HP PA-RISC 7100, which is used in the HP 700 series workstations and in the Convex Exemplar; and the Cray proprietary processor, which is used in the new Cray J916. The architecture of these microprocessors will first be presented. The effective performance of these processors will then be compared, both by citing standard benchmarks and also in the context of implementing a real applications. In the process, different programming models such as data parallel (CM Fortran and HPF) and message passing (PVM and MPI) will be introduced and compared. The latest NAS Parallel Benchmark (NPB) absolute performance and performance per dollar figures will be presented. The next generation of the NP13 will also be described. The tutorial will conclude with a discussion of general trends in the field of high performance computing, including likely future developments in hardware and software technology, and the relative roles of vector supercomputers tightly coupled parallel computers, and clusters of workstations. This tutorial will provide a unique cross-machine comparison not available elsewhere.

  19. Automatic Energy Schemes for High Performance Applications

    SciTech Connect

    Sundriyal, Vaibhav

    2013-01-01

    Although high-performance computing traditionally focuses on the efficient execution of large-scale applications, both energy and power have become critical concerns when approaching exascale. Drastic increases in the power consumption of supercomputers affect significantly their operating costs and failure rates. In modern microprocessor architectures, equipped with dynamic voltage and frequency scaling (DVFS) and CPU clock modulation (throttling), the power consumption may be controlled in software. Additionally, network interconnect, such as Infiniband, may be exploited to maximize energy savings while the application performance loss and frequency switching overheads must be carefully balanced. This work first studies two important collective communication operations, all-to-all and allgather and proposes energy saving strategies on the per-call basis. Next, it targets point-to-point communications to group them into phases and apply frequency scaling to them to save energy by exploiting the architectural and communication stalls. Finally, it proposes an automatic runtime system which combines both collective and point-to-point communications into phases, and applies throttling to them apart from DVFS to maximize energy savings. The experimental results are presented for NAS parallel benchmark problems as well as for the realistic parallel electronic structure calculations performed by the widely used quantum chemistry package GAMESS. Close to the maximum energy savings were obtained with a substantially low performance loss on the given platform.

  20. High-performance computers for unmanned vehicles

    NASA Astrophysics Data System (ADS)

    Toms, David; Ettinger, Gil J.

    2005-10-01

    The present trend of increasing functionality onboard unmanned vehicles is made possible by rapid advances in high-performance computers (HPCs). An HPC is characterized by very high computational capability (100s of billions of operations per second) contained in lightweight, rugged, low-power packages. HPCs are critical to the processing of sensor data onboard these vehicles. Operations such as radar image formation, target tracking, target recognition, signal intelligence signature collection and analysis, electro-optic image compression, and onboard data exploitation are provided by these machines. The net effect of an HPC is to minimize communication bandwidth requirements and maximize mission flexibility. This paper focuses on new and emerging technologies in the HPC market. Emerging capabilities include new lightweight, low-power computing systems: multi-mission computing (using a common computer to support several sensors); onboard data exploitation; and large image data storage capacities. These new capabilities will enable an entirely new generation of deployed capabilities at reduced cost. New software tools and architectures available to unmanned vehicle developers will enable them to rapidly develop optimum solutions with maximum productivity and return on investment. These new technologies effectively open the trade space for unmanned vehicle designers.