Attofarad resolution capacitance-voltage measurement of nanometer scale field effect transistors utilizing ambient noise.

PubMed

Gokirmak, Ali; Inaltekin, Hazer; Tiwari, Sandip

2009-08-19

A high resolution capacitance-voltage (C-V) characterization technique, enabling direct measurement of electronic properties at the nanoscale in devices such as nanowire field effect transistors (FETs) through the use of random fluctuations, is described. The minimum noise level required for achieving sub-aF (10(-18) F) resolution, the leveraging of stochastic resonance, and the effect of higher levels of noise are illustrated through simulations. The non-linear DeltaC(gate-source/drain)-V(gate) response of FETs is utilized to determine the inversion layer capacitance (C(inv)) and carrier mobility. The technique is demonstrated by extracting the carrier concentration and effective electron mobility in a nanoscale Si FET with C(inv) = 60 aF.

Apps for Angiosperms: The Usability of Mobile Computers and Printed Field Guides for UK Wild Flower and Winter Tree Identification

ERIC Educational Resources Information Center

Stagg, Bethan C.; Donkin, Maria E.

2017-01-01

We investigated usability of mobile computers and field guide books with adult botanical novices, for the identification of wildflowers and deciduous trees in winter. Identification accuracy was significantly higher for wildflowers using a mobile computer app than field guide books but significantly lower for deciduous trees. User preference…

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Effects of concentration and annealing on the performance of regioregular poly(3-hexylthiophene) field-effect transistors

NASA Astrophysics Data System (ADS)

Tian, Xue-Yan; Xu, Zheng; Zhao, Su-Ling; Zhang, Fu-Jun; Yuan, Guang-Cai; Xu, Xu-Rong

2009-08-01

This paper investigates the effects of concentration on the crystalline structure, the morphology, and the charge carrier mobility of regioregular poly(3-hexylthiophene) (RR-P3HT) field-effect transistors (FETs). The RR-P3HT FETs with RR-P3HT as an active layer with different concentrations of RR-P3HT solution from 0.5 wt% to 2 wt% are prepared. The results indicate that the performance of RR-P3HT FETs improves drastically with the increase of RR-P3HT weight percentages in chloroform solution due to the formation of more microcrystalline lamellae and bigger nanoscale islands. It finds that the field-effect mobility of RR-P3HT FET with 2 wt% can reach 5.78 × 10-3 cm2/Vs which is higher by a factor of 13 than that with 0.5 wt%. Further, an appropriate thermal annealing is adopted to improve the performance of RR-P3HT FETs. The field-effect mobility of RR-P3HT FETs increases drastically to 0.09 cm2/Vs by thermal annealing at 150 °C, and the value of on/off current ratio can reach 104.

Evaluation of the field-effect carrier mobility in single-grain (and polycrystalline) organic semconductors

NASA Astrophysics Data System (ADS)

Kwok, H. L.

2005-08-01

Mobility in single-grain and polycrystalline organic field-effect transistors (OFETs) is of interest because it affects the performance of these devices. While reasonable values of the hole mobility has been measured in pentacene OFETs, relatively speaking, our understanding of the detailed transport mechanisms is somewhat weak and there is a lack of precise knowledge on the effects of the materials parameters such as the site spacing, the localization length, the rms width of the density of states (DOS), the escape frequency, etc. This work attempts to analyze the materials parameters of pentacene OFETs extracted from data reported in the literature. In this work, we developed a model for the mobility parameter from first principle and extracted the relevant materials parameters. According to our analyses, the transport mechanisms in the OFETs are fairly complex and the electrical properties are dominated by the properties of the trap states. As observed, the single-grain OFETs having smaller values of the rms widths of the DOS (in comparison with the polycrystalline OFETs) also had higher hole mobilities. Our results showed that increasing the gate bias could have a similar but smaller effect. Potentially, increasing the escape frequency is a more effective way to raise the hole mobility and this parameter appears to be affected by changes in the molecular structure and in the degree of "disorder".

Efficient Defect Engineering for Solution Combustion Processed In-Zn-O thin films for high performance transistors

NASA Astrophysics Data System (ADS)

Liang, Xiaoci; Wang, Chengcai; Liang, Jun; Liu, Chuan; Pei, Yanli

2017-09-01

The oxygen related defects in the solution combustion-processed InZnO vitally affect the field-effect mobility and on-off characteristics in thin film transistors (TFTs). We use photoelectron spectroscopy to reveal that these defects can be well controlled by adjusting the atmosphere and flow rate during the combustion reaction, but are hardly affected by further post-annealing after the reaction. In device performance, the threshold voltage of the InZnO-TFTs was regulated in a wide range from 3.5 V to 11.0 V. To compromise the high field-effect mobility and good subthreshold properties, we fabricate the TFTs with double active layers of InZnO to achieve vertical gradience in defect distribution. The resulting TFT exhibits much higher field-effect mobility as 17.5 cm2 · V-1 · s-1, a low reversed sub-threshold slope as 0.35 V/decade, and a high on-off ratio as 107. The presented understandings and methods on defect engineering are efficient in improving the device performance of TFTs made from the combustion reaction process.

Electrical instability of high-mobility zinc oxynitride thin-film transistors upon water exposure

NASA Astrophysics Data System (ADS)

Kim, Dae-Hwan; Jeong, Hwan-Seok; Kwon, Hyuck-In

2017-03-01

We investigate the effects of water absorption on the electrical performance and stability in high-mobility zinc oxynitride (ZnON) thin-film transistors (TFTs). The ZnON TFT exhibits a smaller field-effect mobility, lower turn-on voltage, and higher subthreshold slope with a deteriorated electrical stability under positive gate bias stresses after being exposed to water. From the Hall measurements, an increase of the electron concentration and a decrease of the Hall mobility are observed in the ZnON thin film after water absorption. The observed phenomena are mainly attributed to the water molecule-induced increase of the defective ZnXNY bond and the oxygen vacancy inside the ZnON thin film based on the x-ray photoelectron spectroscopy analysis.

Amplified Emission and Field-Effect Transistor Characteristics of One-Dimensionally Structured 2,5-Bis(4-biphenylyl)thiophene Crystals.

PubMed

Hashimoto, Kazumasa; Sasaki, Fumio; Hotta, Shu; Yanagi, Hisao

2016-04-01

One-dimensional (1D) structures of 2,5-bis(4-biphenylyl)thiophene (BP1T) crystals are fabricated for light amplification and field-effect transistor (FET) measurements. A strip-shaped 1D structure (10 µm width) made by photolitography of a vapor-deposited polycrystalline film shows amplified spontaneous emission and lasing oscillations under optical pumping. An FET fabricated with this 1D structure exhibits hole-conduction with a mobility of µh = 8.0 x 10(-3) cm2/Vs. Another 1 D-structured FET is fabricated with epitaxially grown needle-like crystals of BP1T. This needle-crystal FET exhibits higher mobility of µh = 0.34 cm2/Vs. This improved hole mobility is attributed to the single-crystal channel of epitaxial needles while the grain boudaries in the polycrystalline 1 D-structure decrease the carrier transport.

High mobility La-doped BaSnO3 on non-perovskite MgO substrate

NASA Astrophysics Data System (ADS)

Kim, Youjung; Shin, Juyeon; Kim, Young Mo; Char, Kookrin

(Ba,La)SnO3 is a transparent perovskite oxide with high electron mobility and excellent oxygen stability. Field effect device with (Ba,La)SnO3 channel was reported to show good output characteristics on STO substrate. Here, we fabricated (Ba,La)SnO3\\ films and field effect devices with (Ba,La)SnO3 channel on non-perovskite MgO substrates, which are available in large size wafers. X-ray diffraction and transmission electron microscope (TEM) images of (Ba,La)SnO3\\ films on MgO substrates show that the films are epitaxial with many threading dislocations. (Ba,La)SnO3 exhibits the high mobility with 97.2 cm2/Vs at 2 % La doping on top of 150 nm thick BaSnO3 buffer layer. Excellent carrier modulation was observed in field effect devices. FET performances on MgO substrates are slightly better than those on SrTiO3 substrates in spite of the higher dislocation density on MgO than on SrTiO3 substrates. These high mobility BaSnO3 thin films and transistors on MgO substrates will accelerate development for applications in high temperature and high power electronics. Samsung Science and Technology Foundation.

Engaging Students in Higher Education through Mobile Learning

NASA Astrophysics Data System (ADS)

Menkhoff, Thomas; Bengtsson, Magnus Lars

This exploratory study reports pedagogical experiences with using mobiles phone, wikis and other mobile learning approaches such as walking tours as educational tools in the context of an undergraduate course on Chinese entrepreneurship taught at a university in Singapore. Conceptualised as mobile learning, the paper argues that ICT (information and communication technologies) devices used by students as part of their everyday life such as hand phones in combination with social media such as course wikis and other pedagogical methods such as mini lectures, field visits and walking tours can greatly enrich learners' experience provided their usage is easy and effectively integrated into the respective instructional strategy.

Direct Effect of Dielectric Surface Energy on Carrier Transport in Organic Field-Effect Transistors.

PubMed

Zhou, Shujun; Tang, Qingxin; Tian, Hongkun; Zhao, Xiaoli; Tong, Yanhong; Barlow, Stephen; Marder, Seth R; Liu, Yichun

2018-05-09

The understanding of the characteristics of gate dielectric that leads to optimized carrier transport remains controversial, and the conventional studies applied organic semiconductor thin films, which introduces the effect of dielectric on the growth of the deposited semiconductor thin films and hence only can explore the indirect effects. Here, we introduce pregrown organic single crystals to eliminate the indirect effect (semiconductor growth) in the conventional studies and to undertake an investigation of the direct effect of dielectric on carrier transport. It is shown that the matching of the polar and dispersive components of surface energy between semiconductor and dielectric is favorable for higher mobility. This new empirical finding may show the direct relationship between dielectric and carrier transport for the optimized mobility of organic field-effect transistors and hence show a promising potential for the development of next-generation high-performance organic electronic devices.

Tumor promotion by exposure to radiofrequency electromagnetic fields below exposure limits for humans.

PubMed

Lerchl, Alexander; Klose, Melanie; Grote, Karen; Wilhelm, Adalbert F X; Spathmann, Oliver; Fiedler, Thomas; Streckert, Joachim; Hansen, Volkert; Clemens, Markus

2015-04-17

The vast majority of in vitro and in vivo studies did not find cancerogenic effects of exposure to electromagnetic fields (RF-EMF), i.e. emitted by mobile phones and base stations. Previously published results from a pilot study with carcinogen-treated mice, however, suggested tumor-promoting effects of RF-EMF (Tillmann et al., 2010). We have performed a replication study using higher numbers of animals per group and including two additional exposure levels (0 (sham), 0.04, 0.4 and 2 W/kg SAR). We could confirm and extend the originally reported findings. Numbers of tumors of the lungs and livers in exposed animals were significantly higher than in sham-exposed controls. In addition, lymphomas were also found to be significantly elevated by exposure. A clear dose-response effect is absent. We hypothesize that these tumor-promoting effects may be caused by metabolic changes due to exposure. Since many of the tumor-promoting effects in our study were seen at low to moderate exposure levels (0.04 and 0.4 W/kg SAR), thus well below exposure limits for the users of mobile phones, further studies are warranted to investigate the underlying mechanisms. Our findings may help to understand the repeatedly reported increased incidences of brain tumors in heavy users of mobile phones. Copyright © 2015 Elsevier Inc. All rights reserved.

Carrier mobility in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Xu, Yong; Benwadih, Mohamed; Gwoziecki, Romain; Coppard, Romain; Minari, Takeo; Liu, Chuan; Tsukagoshi, Kazuhito; Chroboczek, Jan; Balestra, Francis; Ghibaudo, Gerard

2011-11-01

A study of carrier transport in top-gate and bottom-contact TIPS-pentacene organic field-effect transistors (OFETs) based on mobility is presented. Among three mobilities extracted by different methods, the low-field mobility obtained by the Y function exhibits the best reliability and ease for use, whereas the widely applied field-effect mobility is not reliable, particularly in short-channel transistors and at low temperatures. A detailed study of contact transport reveals its strong impact on short-channel transistors, suggesting that a more intrinsic transport analysis is better implemented in relatively longer-channel devices. The observed temperature dependences of mobility are well explained by a transport model with Gaussian-like diffusivity band tails, different from diffusion in localized states band tails. This model explicitly interprets the non-zero constant mobility at low temperatures and clearly demonstrates the effects of disorder and hopping transport on temperature and carrier density dependences of mobility in organic transistors.

Comparative study of mobility extraction methods in p-type polycrystalline silicon thin film transistors

NASA Astrophysics Data System (ADS)

Liu, Kai; Liu, Yuan; Liu, Yu-Rong; En, Yun-Fei; Li, Bin

2017-07-01

Channel mobility in the p-type polycrystalline silicon thin film transistors (poly-Si TFTs) is extracted using Hoffman method, linear region transconductance method and multi-frequency C-V method. Due to the non-negligible errors when neglecting the dependence of gate-source voltage on the effective mobility, the extracted mobility results are overestimated using linear region transconductance method and Hoffman method, especially in the lower gate-source voltage region. By considering of the distribution of localized states in the band-gap, the frequency independent capacitance due to localized charges in the sub-gap states and due to channel free electron charges in the conduction band were extracted using multi-frequency C-V method. Therefore, channel mobility was extracted accurately based on the charge transport theory. In addition, the effect of electrical field dependent mobility degradation was also considered in the higher gate-source voltage region. In the end, the extracted mobility results in the poly-Si TFTs using these three methods are compared and analyzed.

Exposure to mobile telecommunication networks assessed using personal dosimetry and well-being in children and adolescents: the German MobilEe-study.

PubMed

Thomas, Silke; Kühnlein, Anja; Heinrich, Sabine; Praml, Georg; von Kries, Rüdiger; Radon, Katja

2008-11-04

Despite the increase of mobile phone use in the last decade and the growing concern whether mobile telecommunication networks adversely affect health and well-being, only few studies have been published that focussed on children and adolescents. Especially children and adolescents are important in the discussion of adverse health effects because of their possibly higher vulnerability to radio frequency electromagnetic fields. We investigated a possible association between exposure to mobile telecommunication networks and well-being in children and adolescents using personal dosimetry. A population-based sample of 1.498 children and 1.524 adolescents was assembled for the study (response 52%). Participants were randomly selected from the population registries of four Bavarian (South of Germany) cities and towns with different population sizes. During a Computer Assisted Personal Interview data on participants' well-being, socio-demographic characteristics and potential confounder were collected. Acute symptoms were assessed three times during the study day (morning, noon, evening).Using a dosimeter (ESM-140 Maschek Electronics), we obtained an exposure profile over 24 hours for three mobile phone frequency ranges (measurement interval 1 second, limit of determination 0.05 V/m) for each of the participants. Exposure levels over waking hours were summed up and expressed as mean percentage of the ICNIRP (International Commission on Non-Ionizing Radiation Protection) reference level. In comparison to non-participants, parents and adolescents with a higher level of education who possessed a mobile phone and were interested in the topic of possible adverse health effects caused by mobile telecommunication network frequencies were more willing to participate in the study. The median exposure to radio frequency electromagnetic fields of children and adolescents was 0.18% and 0.19% of the ICNIRP reference level respectively. In comparison to previous studies this is one of the first to assess the individual level of exposure to mobile telecommunication networks using personal dosimetry, enabling objective assessment of exposure from all sources and longer measurement periods. In total, personal dosimetry was proofed to be a well accepted tool to study exposure to mobile phone frequencies in epidemiologic studies including health effects on children and adolescents.

Flexible black phosphorus ambipolar transistors, circuits and AM demodulator.

PubMed

Zhu, Weinan; Yogeesh, Maruthi N; Yang, Shixuan; Aldave, Sandra H; Kim, Joon-Seok; Sonde, Sushant; Tao, Li; Lu, Nanshu; Akinwande, Deji

2015-03-11

High-mobility two-dimensional (2D) semiconductors are desirable for high-performance mechanically flexible nanoelectronics. In this work, we report the first flexible black phosphorus (BP) field-effect transistors (FETs) with electron and hole mobilities superior to what has been previously achieved with other more studied flexible layered semiconducting transistors such as MoS2 and WSe2. Encapsulated bottom-gated BP ambipolar FETs on flexible polyimide afforded maximum carrier mobility of about 310 cm(2)/V·s with field-effect current modulation exceeding 3 orders of magnitude. The device ambipolar functionality and high-mobility were employed to realize essential circuits of electronic systems for flexible technology including ambipolar digital inverter, frequency doubler, and analog amplifiers featuring voltage gain higher than other reported layered semiconductor flexible amplifiers. In addition, we demonstrate the first flexible BP amplitude-modulated (AM) demodulator, an active stage useful for radio receivers, based on a single ambipolar BP transistor, which results in audible signals when connected to a loudspeaker or earphone. Moreover, the BP transistors feature mechanical robustness up to 2% uniaxial tensile strain and up to 5000 bending cycles.

Cytogenetic investigation of subjects professionally exposed to radiofrequency radiation.

PubMed

Maes, Annemarie; Van Gorp, Urbain; Verschaeve, Luc

2006-03-01

Nowadays, virtually everybody is exposed to radiofrequency radiation (RFR) from mobile phone base station antennas or other sources. At least according to some scientists, this exposure can have detrimental health effects. We investigated cytogenetic effects in peripheral blood lymphocytes from subjects who were professionally exposed to mobile phone electromagnetic fields in an attempt to demonstrate possible RFR-induced genetic effects. These subjects can be considered well suited for this purpose as their RFR exposure is 'normal' though rather high, and definitely higher than that of the 'general population'. The alkaline comet assay, sister chromatid exchange (SCE) and chromosome aberration tests revealed no evidence of RFR-induced genetic effects. Blood cells were also exposed to the well known chemical mutagen mitomycin C in order to investigate possible combined effects of RFR and the chemical. No cooperative action was found between the electromagnetic field exposure and the mutagen using either the comet assay or SCE test.

Boost the electron mobility of solution-grown organic single crystals via reducing the amount of polar solvent residues

DOE PAGES

Xue, Guobiao; Xin, Huolin L.; Wu, Jiake; ...

2015-10-29

Enhancing electron transport to match with the development in hole transport is critical for organic electronics in the future. As electron motion is susceptible to extrinsic factors, seeking these factors and avoiding their negative effects have become the central challenge. Here, the existence of polar solvent residues in solution-grown single-crystals of 6,13-bis(triisopropylsilylethynyl)-5,7,12,14-tetraazapentacene is identified as a factor detrimental to electron motion. Field-effect transistors of the crystals exhibit electron mobility boosted by about 60% after the residues are removed. The average electron mobility reaches up to 8.0 ± 2.2 cm 2 V –1 s –1 with a highest value of 13.3more » cm 2 V –1 s –1; these results are significantly higher than those obtained previously for the same molecule (1.0–5.0 cm 2 V –1 s –1). Furthermore, the achieved mobility is also higher than the maximum reported electron mobility for organic materials (11 cm 2 V –1 s –1). As a result, this work should greatly accelerate the advancement of organic electron-transporting materials.« less

Triazine herbicide imprinted monolithic column for capillary electrochromatography.

PubMed

Aşır, Süleyman; Derazshamshir, Ali; Yılmaz, Fatma; Denizli, Adil

2015-12-01

Trietazine was selectively separated from aqueous solution containing the competitor molecule cyanazine, which is similar in size and shape to the template molecule. Structural features of the molecularly imprinted column were figured out by SEM. The influence of the mobile-phase composition, applied electrical field, and pH of the mobile phase on the recognition of trietazine by the imprinted monolithic polymer has been evaluated, and the imprint effect in the trietazine-imprinted monolithic polymer was demonstrated by an imprinting factor. The optimized monolithic column resulted in separation of trietazine from a structurally related competitor molecule, cyanazine. In addition, fast separation was obtained within 6 min by applying higher electrical field, with the electrophoretic mobility of 2.97 × 10(-8) m(2) V(-1) s(-1) at pH 11.0. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Temperature-dependent resistance switching in SrTiO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Jian-kun; University of Chinese Academy of Sciences, Beijing 100049; Ma, Chao

2016-06-13

Resistance switching phenomena were studied by varying temperature in SrTiO{sub 3} single crystal. The resistance hysteresis loops appear at a certain temperature ranging from 340 K to 520 K. With the assistance of 375 nm ultraviolet continuous laser, the sample resistance is greatly reduced, leading to a stable effect than that in dark. These resistance switching phenomena only exist in samples with enough oxygen vacancies, which is confirmed by spherical aberration-corrected scanning transmission electron microscopy measurements, demonstrating an important role played by oxygen vacancies. At temperatures above 340 K, positively charged oxygen vacancies become mobile triggered by external electric field, and the resistance switchingmore » effect emerges. Our theoretical results based on drift-diffusion model reveal that the built-in field caused by oxygen vacancies can be altered under external electric field. Therefore, two resistance states are produced under the cooperative effect of built-in field and external field. However, the increasing mobility of oxygen vacancies caused by higher temperature promotes internal electric field to reach equilibrium states quickly, and suppresses the hysteresis loops above 420 K.« less

Mobility-dependent low-frequency noise in graphene field-effect transistors.

PubMed

Zhang, Yan; Mendez, Emilio E; Du, Xu

2011-10-25

We have investigated the low-frequency 1/f noise of both suspended and on-substrate graphene field-effect transistors and its dependence on gate voltage, in the temperature range between 300 and 30 K. We have found that the noise amplitude away from the Dirac point can be described by a generalized Hooge's relation in which the Hooge parameter α(H) is not constant but decreases monotonically with the device's mobility, with a universal dependence that is sample and temperature independent. The value of α(H) is also affected by the dynamics of disorder, which is not reflected in the DC transport characteristics and varies with sample and temperature. We attribute the diverse behavior of gate voltage dependence of the noise amplitude to the relative contributions from various scattering mechanisms, and to potential fluctuations near the Dirac point caused by charge carrier inhomogeneity. The higher carrier mobility of suspended graphene devices accounts for values of 1/f noise significantly lower than those observed in on-substrate graphene devices and most traditional electronic materials.

Highly soluble [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives for high-performance, solution-processed organic field-effect transistors.

PubMed

Ebata, Hideaki; Izawa, Takafumi; Miyazaki, Eigo; Takimiya, Kazuo; Ikeda, Masaaki; Kuwabara, Hirokazu; Yui, Tatsuto

2007-12-26

2,7-Dialkyl[1]benzothieno[3,2-b]benzothiophenes were tested as solution-processible molecular semiconductors. Thin films of the organic semiconductors deposited on Si/SiO2 substrates by spin coating have well-ordered structures as confirmed by XRD analysis. Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility higher than 1.0 cm2 V-1 s-1 and Ion/Ioff of approximately 10(7).

The role of polarization coulomb field scattering in the electron mobility of AlGaN/AlN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Liu, Yan; Lin, Zhaojun; Zhao, Jingtao; Yang, Ming; Shi, Wenjing; Lv, Yuanjie; Feng, Zhihong

2016-04-01

The electron mobility for the prepared AlGaN/AlN/GaN heterostructure field-effect transistor (HFET) with the ratio of the gate length to the drain-to-source distance being less than 1/2 has been studied by comparing the measured electron mobility with the theoretical value. The measured electron mobility is derived from the measured capacitance-voltage (C-V) and current-voltage (I-V) characteristics, and the theoretical mobility is determined by using Matthiessen's law, involving six kinds of important scattering mechanisms. For the prepared device at room temperature, longitudinal optical phonon scattering (LO scattering) was found to have a remarkable effect on the value of the electron mobility, and polarization Coulomb field scattering (PCF scattering ) was found to be important to the changing trend of the electron mobility versus the two-dimensional electron gas (2DEG) density.

Modeling Study: Mechanism of Foam Propagation in Porous Media at Different Levels of Minimum Mobilization Pressure Gradient

NASA Astrophysics Data System (ADS)

Izadi, M.; Kam, S.

2017-12-01

Scope: Numerous laboratory and field tests revealed that foam can effectively control gas mobility and improve sweep efficiency in enhanced-oil-recovery and subsurface-remediation processes, if correctly designed. The objective of this study is to answer (i) how mechanistic foam model parameters can be determined by fitting lab experiments in a step-by-step manner; (ii) how different levels of mobilization pressure gradient for foam generation affects the fundamentals of foam propagation; and (iii) how foam propagation distance can be estimated in the subsurface. This study for the first time shows why, and by how much, supercritical CO2 foams are advantaged over other types of foams such as N2 foam. Methods: First of all, by borrowing experimental data existing in the literature, this study shows how to capture mechanistic foam model parameters. The model, then, is applied to a wide range of mobilization pressure gradient to represent different types of foams that have been applied in the field (Note that supercritical CO2 foams exhibit much lower mobilization pressure compared to other types of foams (N2, steam, air, etc.). Finally, the model and parameters are used to evaluate different types of foam injection scenarios in order to predict how far foams can propagate with what properties in the field condition. Results and Conclusions: The results show that (i) the presence of three different foam states (strong, weak, intermediate) as well as two different strong-foam flow regimes (high-quality and low-quality regimes) plays a key role in model fit and field-scale propagation prediction and (ii) the importance of complex non-Newtonian foam rheology should not be underestimated. More specifically, this study finds that (i) supercritical CO2 foams can propagate a few hundreds of feet easily, which is a few orders of magnitude higher than other foams such as N2 foams; (ii) for dry foams (or, strong foams in the high-quality regime), the higher gas fractions the less foams travel, while for wet foams (or, strong foams in the low-quality regime) the distance is not sensitive to gas fraction; and (iii) the higher injection rates (or pressures), the farther foams propagate (this effect is much more pronounced for dry foams).

Mobile phone use and location of glioma: a case-case analysis.

PubMed

Hartikka, Hanna; Heinävaara, Sirpa; Mäntylä, Riitta; Kähärä, Veikko; Kurttio, Päivi; Auvinen, Anssi

2009-04-01

We assessed a new approach for evaluating the glioma risk among users of mobile phones to focus on the part of the brain most heavily exposed to radiofrequency electromagnetic fields from mobile phones. The tumor midpoint was defined from radiological imaging. A case-case analysis with 99 gliomas was performed using logistic regression. The exposed cases were those with the tumor mid-point within 4.6 cm from the line between the mouth and the external meatus of the ear, representing the most likely location of the mobile phone (the source of exposure). Alternative analyses based on various indicators of mobile phone use as the outcome were also carried out. The majority of cases were regular mobile phone users. A slightly higher proportion of gliomas among mobile phone users than non-users occurred within 4.6 cm from the presumed location of the mobile phone (28% vs. 14%). Modestly elevated odds ratios were observed for several indicators of mobile phone use, but without an exposure gradient. The highest odds ratios were found for contralateral and short-term use. Our results, though limited by the small sample size, demonstrate that detailed information on tumor location allows evaluation of the risk related to the most heavily exposed part of the brain, representing direct evaluation of the possible local carcinogenic effects of the radiofrequency fields. However, field strength varies between users and over time also within a given anatomic site, due to the output power of the phone. Collaborative analysis of a larger sample is planned. (c) 2009 Wiley-Liss, Inc.

Use of high metal-containing biogas digestates in cereal production - Mobility of chromium and aluminium.

PubMed

Dragicevic, Ivan; Eich-Greatorex, Susanne; Sogn, Trine A; Horn, Svein J; Krogstad, Tore

2018-07-01

Biogas digestate use as organic fertilizer has been widely promoted in recent years as a part of the global agenda on recycling waste and new sustainable energy production. Although many studies have confirmed positive effects of digestates on soil fertility, there is still lack of information on the potential adverse effects of digestates on natural soil heavy metal content, metal leaching and leaching of other pollutants. We have investigated the release of aluminium (Al) and chromium (Cr) from different soils treated with commercial digestates high in mentioned potentially problematic metals in a field experiment, while a greenhouse and a laboratory column experiment were used to address mobility of these metals in two other scenarios. Results obtained from the field experiment showed an increase in total concentrations for both investigated metals on plots treated with digestates as well as a significant increase of water-soluble Al concentrations. Factors that were found to be mostly affecting the metal mobility were dissolved organic carbon (DOC), pH and type of soil. Metal binding and free metal concentrations were modelled using the WHAM 7.0 software. Results indicated that the use of digestates with high metal content are comparable to use of animal manure with respect to metal leaching. Data obtained through chemical modelling for the samples from the field experiment suggested that an environmental risk from higher metal mobility has to be considered for Al. In the greenhouse experiment, measured concentrations of leached Cr at the end of the growing season were low for all treatments, while the concentration of leached Al from digestates was higher. The high irrigation column leaching experiment showed an increased leaching rate of Cr with addition of digestates. Copyright © 2018 Elsevier Ltd. All rights reserved.

Analysis of the mobile phone effect on the heart rate variability by using the largest Lyapunov exponent.

PubMed

Yılmaz, Derya; Yıldız, Metin

2010-12-01

In this study, the effects of electromagnetic fields (EMFs) emitted by GSM900 based mobile phones (MPs) on the heart rate variability (HRV) were examined by using nonlinear analysis methods. The largest Lyapunov exponent (LLE) calculation was used to evaluate the effect of MP under various real exposure conditions. Sixteen healthy young volunteers were exposed to EMFs emitted by GSM900 based MP at two levels from a very low EMF (MP at stand-by) to a higher EMF (MP at pre-ring handshaking and ringing). A blind experimental protocol was designed and utilized with consideration to the physiological and psychological factors that may affect HRV. The results showed that the LLE values increased slightly with higher EMF produced by MP (P < 0.05). This change indicates that the degree of chaos in the HRV signals increased at higher EMF compared to low level EMF. Consequently, we have concluded that high level EMF changed the complexity of cardiac system behavior, significantly.

Theoretical study of the two-dimensional electron mobility in strained III-nitride heterostructures

NASA Astrophysics Data System (ADS)

Yu, Tsung-Hsing; Brennan, Kevin F.

2001-04-01

We present calculations of the two-dimensional (2D) electron mobility in III-nitride heterojunction structures in the presence of spontaneous and piezoelectrically induced polarization effects. The calculations are made using a self-consistent solution of the Schrödinger, Poisson, charge and potential balance equations. It is found that the polarization fields act to significantly increase the 2D sheet charge concentration while reducing the mobility. The mobility reduction results from the enhanced band bending and subsequent attraction of the electrons to the heterointerface where they experience increased surface roughness scattering. Good agreement is obtained between the theoretical calculations and experimental measurements over the full temperature range examined. Comparison of the mobility in InGaN/GaN to AlGaN/GaN heterostructures is made. It is found that the mobility is significantly higher in the InGaN/GaN structure than in the AlGaN/GaN structure.

Introduction of Shear-Based Transport Mechanisms in Radial-Axial Hybrid Hall Thruster Simulations

NASA Astrophysics Data System (ADS)

Scharfe, Michelle; Gascon, Nicolas; Scharfe, David; Cappelli, Mark; Fernandez, Eduardo

2007-11-01

Electron diffusion across magnetic field lines in Hall effect thrusters is experimentally observed to be higher than predicted by classical diffusion theory. Motivated by theoretical work for fusion applications and experimental measurements of Hall thrusters, numerical models for the electron transport are implemented in radial-axial hybrid simulations in order to compute the electron mobility using simulated plasma properties and fitting parameters. These models relate the cross-field transport to the imposed magnetic field distribution through shear suppression of turbulence-enhanced transport. While azimuthal waves likely enhance cross field mobility, axial shear in the electron fluid may reduce transport due to a reduction in turbulence amplitudes and modification of phase shifts between fluctuating properties. The sensitivity of the simulation results to the fitting parameters is evaluated and an examination is made of the transportability of these parameters to several Hall thruster devices.

Extracting the field-effect mobilities of random semiconducting single-walled carbon nanotube networks: A critical comparison of methods

NASA Astrophysics Data System (ADS)

Schießl, Stefan P.; Rother, Marcel; Lüttgens, Jan; Zaumseil, Jana

2017-11-01

The field-effect mobility is an important figure of merit for semiconductors such as random networks of single-walled carbon nanotubes (SWNTs). However, owing to their network properties and quantum capacitance, the standard models for field-effect transistors cannot be applied without modifications. Several different methods are used to determine the mobility with often very different results. We fabricated and characterized field-effect transistors with different polymer-sorted, semiconducting SWNT network densities ranging from low (≈6 μm-1) to densely packed quasi-monolayers (≈26 μm-1) with a maximum on-conductance of 0.24 μS μm-1 and compared four different techniques to evaluate the field-effect mobility. We demonstrate the limits and requirements for each method with regard to device layout and carrier accumulation. We find that techniques that take into account the measured capacitance on the active device give the most reliable mobility values. Finally, we compare our experimental results to a random-resistor-network model.

Growth-substrate induced performance degradation in chemically synthesized monolayer MoS{sub 2} field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amani, Matin; Chin, Matthew L.; Mazzoni, Alexander L.

2014-05-19

We report on the electronic transport properties of single-layer thick chemical vapor deposition (CVD) grown molybdenum disulfide (MoS{sub 2}) field-effect transistors (FETs) on Si/SiO{sub 2} substrates. MoS{sub 2} has been extensively investigated for the past two years as a potential semiconductor analogue to graphene. To date, MoS{sub 2} samples prepared via mechanical exfoliation have demonstrated field-effect mobility values which are significantly higher than that of CVD-grown MoS{sub 2}. In this study, we will show that the intrinsic electronic performance of CVD-grown MoS{sub 2} is equal or superior to that of exfoliated material and has been possibly masked by a combinationmore » of interfacial contamination on the growth substrate and residual tensile strain resulting from the high-temperature growth process. We are able to quantify this strain in the as-grown material using pre- and post-transfer metrology and microscopy of the same crystals. Moreover, temperature-dependent electrical measurements made on as-grown and transferred MoS{sub 2} devices following an identical fabrication process demonstrate the improvement in field-effect mobility.« less

Modification and Mobility of Dunes and Ripples in Middle and High Southern Latitude Dune Fields

NASA Astrophysics Data System (ADS)

Banks, M.; Fenton, L. K.; Chojnacki, M.; Silvestro, S.

2017-12-01

Change detection analyses of aeolian bedforms (dunes and ripples), using multi-temporal images (0.25 m/pixel) acquired by the High Resolution Imaging Science Experiment (HiRISE), reveal changes and migration of some bedforms. We now have a database of 200 dune fields with migration rates for bedforms that are mobile. Results show that most northern (N) hemisphere bedforms show movement, while 50% of southern (S) hemisphere bedforms show no detectable changes. In particular, bedforms located >70° N are consistently mobile and exhibit high sand fluxes while S hemisphere bedforms progressively decrease in mobility with proximity to the S pole. We analyze HiRISE image pairs covering dune fields south of 40° S for evidence of movement and apply a dune stability index (SI) based on the presence/lack of superposed non-aeolian features and degree of degradation by non-aeolian processes (0-6, higher numbers indicating increasing evidence of stability/modification). Combining mobility data and SI for 71 dune fields, we find a clear trend of decreasing sand mobility and increasing SI with latitude: 1) both dunes and ripples are more commonly mobile at lower latitudes, although some high-latitude ripples are migrating, 2) dune fields with low SIs (≤3) tend to be active while those with higher SIs tend to be inactive, and 3) ripple migration rates decrease slightly with increasing latitude and SI, although this may be attributable to regional variations. The elevation of dune fields generally increases with increasing S latitude suggesting elevation, and decreasing pressure, may contribute to decreasing mobility. A change in dominance of active to inactive bedforms and a morphological shift to higher SIs (SI=2) both occur at 60º S and coincide with the edge of high concentrations of H2O-equivalent hydrogen content observed by the Neutron Spectrometer. This is consistent with previous studies suggesting stabilizing agents (e.g., ground ice), likely limit sediment movement (i.e. sand availability). Active dune fields with morphologies consistent with stability (i.e. migrating ripples with SI=3) may indicate possible competing influences of aeolian and non-aeolian processes (i.e. polar processes), or perhaps a temporal shift from earlier conditions dominated by polar processes to recent increases in aeolian activity.

Effect of mobile ions on the electric field needed to orient charged diblock copolymer thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dehghan, Ashkan; Shi, An-Chang; Schick, M.

We examine the behavior of lamellar phases of charged/neutral diblock copolymer thin films containing mobile ions in the presence of an external electric field. We employ self-consistent field theory and focus on the aligning effect of the electric field on the lamellae. Of particular interest are the effects of the mobile ions on the critical field, the value required to reorient the lamellae from the parallel configuration favored by the surface interaction to the perpendicular orientation favored by the field. We find that the critical field depends strongly on whether the neutral or charged species is favored by the substrates.more » In the case in which the neutral species is favored, the addition of charges decreases the critical electric field significantly. The effect is greater when the mobile ions are confined to the charged lamellae. In contrast, when the charged species is favored by the substrate, the addition of mobile ions stabilizes the parallel configuration and thus results in an increase in the critical electric field. The presence of ions in the system introduces a new mixed phase in addition to those reported previously.« less

No effect of mobile phone-like RF exposure on patients with atopic dermatitis.

PubMed

Johansson, Amanda; Forsgren, Sture; Stenberg, Berndt; Wilén, Jonna; Kalezic, Nebojsa; Sandström, Monica

2008-07-01

This study investigates the effect of exposure to a mobile phone-like radiofrequency (RF) electromagnetic field on people with atopic dermatitis (AD). Fifteen subjects with AD were recruited and matched with 15 controls without AD. The subjects were exposed for 30 min to an RF field at 1 W/kg via an indoor base station antenna attached to a 900 MHz GSM mobile phone. Blood samples for ELISA analysis of the concentration of substance P (SP), tumor necrosis factor receptor 1 (TNF R1), and brain derived neurotrophic factor (BDNF) in serum were drawn before and after the provocation (exposure/sham). Baseline heart rate and heart rate variability, local blood flow, and electrodermal activity were also recorded. No significant differences between the subject groups were found for baseline neurophysiological data. The cases displayed a serum concentration of TNF R1 significantly higher than the control subjects and a significantly lower serum concentration of BDNF in the baseline condition. For SP there was no difference between groups. However, no effects related to RF exposure condition were encountered for any of the measured substances. As to symptoms, a possible correlation with exposure could not be evaluated, due to too few symptom reports. The result of the study does not support the hypothesis of an effect of mobile phone-like RF exposure on serum levels of SP, TNF R1, and BDNF in persons with AD.

[Effects of electromagnetic fields emitted by cellular phone on auditory and vestibular labyrinth].

PubMed

Sievert, U; Eggert, S; Goltz, S; Pau, H W

2007-04-01

It is the subject of this study to investigate the biological effect of the HF radiation produced by the Global System for Mobile Communications-( GSM)-mobile phone on the inner ear with its sensors of the vestibular and auditive systems. Thermographic investigations made on various model materials and on the human temporal bone should show whether mobile phone does induce any increases of temperature which would lead to a relevant stimulus for the auditive and vestibular system or not. We carried out video-nystagmographic recordings of 13 subjects, brainstem electric response audiometry of 24 ears, and recordings of distorsion products of otoacoustic emissions of 20 ears. All tests were made with and without a mobile phone in use. The data was then analyzed for variation patterns in the functional parameters of the hearing and balance system that are subject to the (non)existence of electromagnetic radiation from the mobile phone. The thermographic investigations suggest that the mobile phone does not induce any increases of temperature which would lead to a relevant stimulus for the auditive and vestibular system. Video-nystagmographic recordings under field effect do not furnish any indication of vestibular reactions generated by field effects. Compared with the recording without field, the brainstem electric response audiometry under field effect did not reveal any changes of the parameters investigated, i. e. absolute latency of the peaks I, III, V and the interpeak latency between the peaks I and V. The distorsion products of otoacoustic emissions do not indicate, comparing the three measuring situations, i. e. before field effect, pulsed field and continuous field, any possible impacts of the HF field on the spectrum or levels of emissions for none of the probands. The investigations made show that the electromagnetic fields generated in using the mobile phone do not have an effect on the inner ear and auditive system to the colliculus inferior in the brainstem and on the vestibular receptors in the inner ear and the vestibular system.

Impact of organic carbon and nutrients mobilized during chemical oxidation on subsequent bioremediation of a diesel-contaminated soil.

PubMed

Sutton, Nora B; Grotenhuis, Tim; Rijnaarts, Huub H M

2014-02-01

Remediation with in situ chemical oxidation (ISCO) impacts soil organic matter (SOM) and the microbial community, with deleterious effects on the latter being a major hurdle to coupling ISCO with in situ bioremediation (ISB). We investigate treatment of a diesel-contaminated soil with Fenton's reagent and modified Fenton's reagent coupled with a subsequent bioremediation phase of 187d, both with and without nutrient amendment. Chemical oxidation mobilized SOM into the liquid phase, producing dissolved organic carbon (DOC) concentrations 8-16 times higher than the untreated field sample. Higher aqueous concentrations of nitrogen and phosphorous species were also observed following oxidation; NH4(+) increased 14-172 times. During the bioremediation phase, dissolved carbon and nutrient species were utilized for microbial growth-yielding DOC concentrations similar to field sample levels within 56d of incubation. In the absence of nutrient amendment, the highest microbial respiration rates were correlated with higher availability of nitrogen and phosphorus species mobilized by oxidation. Significant diesel degradation was only observed following nutrient amendment, implying that nutrients mobilized by chemical oxidation can increase microbial activity but are insufficient for bioremediation. While all bioremediation occurred in the first 28d of incubation in the biotic control microcosm with nutrient amendment, biodegradation continued throughout 187d of incubation following chemical oxidation, suggesting that chemical treatment also affects the desorption of organic contaminants from SOM. Overall, results indicate that biodegradation of DOC, as an alternative substrate to diesel, and biological utilization of mobilized nutrients have implications for the success of coupled ISCO and ISB treatments. Copyright © 2013 Elsevier Ltd. All rights reserved.

Organic-inorganic hybrid perovskite quantum dots with high PLQY and enhanced carrier mobility through crystallinity control by solvent engineering and solid-state ligand exchange.

PubMed

Woo Choi, Jin; Woo, Hee Chul; Huang, Xiaoguang; Jung, Wan-Gil; Kim, Bong-Joong; Jeon, Sie-Wook; Yim, Sang-Youp; Lee, Jae-Suk; Lee, Chang-Lyoul

2018-05-22

The photoluminescence quantum yield (PLQY) and charge carrier mobility of organic-inorganic perovskite QDs were enhanced by the optimization of crystallinity and surface passivation as well as solid-state ligand exchange. The crystallinity of perovskite QDs was determined by the Effective solvent field (Esol) of various solvents for precipitation. The solvent with high Esol could more quickly countervail the localized field generated by the polar solvent, and it causes fast crystallization of the dissolved precursor, which results in poor crystallinity. The post-ligand adding process (PLAP) and post-ligand exchange process (PLEP) increase the PLQY of perovskite QDs by reducing non-radiative recombination and the density of surface defect states through surface passivation. Particularly, the post ligand exchange process (PLEP) in the solid-state improved the charge carrier mobility of perovskite QDs in addition to the PLQY enhancement. The ligand exchange with short alkyl chain length ligands could improve the packing density of perovskite QDs in films by reducing the inter-particle distance between perovskite QDs. The maximum hole mobility of 6.2 × 10-3 cm2 V-1 s-1, one order higher than that of pristine QDs without the PLEP, is obtained at perovskite QDs with hexyl ligands. By using PLEP treatment, compared to the pristine device, a 2.5 times higher current efficiency in perovskite QD-LEDs was achieved due to the improved charge carrier mobility and PLQY.

Effect of substrate and temperature on the electronic properties of monolayer molybdenum disulfide field-effect transistors

NASA Astrophysics Data System (ADS)

Yang, Qizhi; Fang, Jiajia; Zhang, Guangru; Wang, Quan

2018-03-01

The use of two-dimensional nanostructured molybdenum disulfide (MoS2) films in field-effect transistors (FETs) in place of graphene was investigated. Monolayer MoS2 films were fabricated by chemical vapor deposition. The output and transfer curves of supported and suspended MoS2 FETs were measured. The mobility of the suspended device reached 364.2 cm2 V-1 s-1 at 150 °C. The hysteresis of the supported device in transfer curves was much larger than that of the suspended device, and it increased at higher temperatures. These results indicate that the device mobility was limited by Coulomb scattering at ambient temperature, and surface/interface phonon scattering at 150 °C, and the injection of electrons, via quantum tunneling through the Schottky barrier at the contact, was enhanced at higher temperatures and led to the increase of the hysteresis. The suspended MoS2 films show potential for application as a channel material in electronic devices, and further understanding the causes of hysteresis in a material is important for its use in technologies, such as memory devices and sensing cells.

Effects of electromagnetic fields from mobile phones on depression and anxiety after titanium mesh cranioplasty among patients with traumatic brain injury.

PubMed

Zhu, Yongjian; Jin, Wen; Liu, Hui; Peng, Deqing; Ding, Zheyuan; Tang, Zhuxiao; Zhu, Liangliang; Yu, Yunxian

2016-01-01

To explore the effects of radiofrequency-electromagnetic fields (RF-EMFs) from mobile phones on depression and anxiety after titanium mesh cranioplasty among patients with traumatic brain injury (TBI). Two hundred and twenty patients with TBI and titanium mesh cranioplasty who were hospitalized from 2008-2012 were recruited in this study. From November-December 2012, the relevant information was surveyed including socio-demographic characteristics, lifestyle variables, injury-related information, RF-EMF exposure of mobile phone, Self-rating Depression Scale (SDS) and Self-rating Anxiety Scale (SAS). Associations of RF-EMFs exposure after titanium mesh cranioplasty with SAS and SDS were respectively estimated by multivariable linear regression models. The patients with long durations of mobile phone use (β = -6.6, p = 0.002), long individual call duration (β = -5.3, p = 0.012), more daily calls (β = -3.6, p = 0.027), invariably answer call immediately (β = -3.9, p = 0.022) and high comprehensive exposure level (β = -4.8, p = 0.003) had a lower score of depression compared with those without a mobile phone. Moreover, an ipsilateral and contralateral answering phone enhanced the protective effect on depression. Individuals with a long duration of mobile phone use had a lower score of anxiety (β = -4.2, p = 0.008), while those with a bilateral answering phone had higher anxiety (β = 3.9, p = 0.012) in comparison to those without a mobile phone. RF-EMFs after cranioplasty were significantly associated with the lower risk of depression and anxiety status among patients with TBI. Chronic and frequent RF-EMFs exposure may improve psychiatric disorders among patients with TBI.

Outdoor and indoor sources of residential radiofrequency electromagnetic fields, personal cell phone and cordless phone use, and cognitive function in 5-6 years old children.

PubMed

Guxens, Mònica; Vermeulen, Roel; van Eijsden, Manon; Beekhuizen, Johan; Vrijkotte, Tanja G M; van Strien, Rob T; Kromhout, Hans; Huss, Anke

2016-10-01

Little is known about the exposure of young children to radiofrequency electromagnetic fields (RF-EMF) and potentially associated health effects. We assessed the relationship between residential RF-EMF exposure from mobile phone base stations, residential presence of indoor sources, personal cell phone and cordless phone use, and children's cognitive function at 5-6 years of age. Cross-sectional study on children aged 5-6 years from the Amsterdam Born Children and their Development (ABCD) study, the Netherlands (n=2354). Residential RF-EMF exposure from mobile phone base stations was estimated with a 3D geospatial radio wave propagation model. Residential presence of indoor sources (cordless phone base stations and Wi-Fi) and children's cell phone and cordless phone use was reported by the mother. Speed of information processing, inhibitory control, cognitive flexibility, and visuomotor coordination was assessed using the Amsterdam Neuropsychological Tasks. Residential presence of RF-EMF indoor sources was associated with an improved speed of information processing. Higher residential RF-EMF exposure from mobile phone base stations and presence of indoor sources was associated with an improved inhibitory control and cognitive flexibility whereas we observed a reduced inhibitory control and cognitive flexibility with higher personal cordless phone use. Higher residential RF-EMF exposure from mobile phone base stations was associated with a reduced visuomotor coordination whereas we observed an improved visuomotor coordination with residential presence of RF-EMF indoor sources and higher personal cell phone use. We found inconsistent associations between different sources of RF-EMF exposure and cognitive function in children aged 5-6 years. Copyright © 2016 Elsevier Inc. All rights reserved.

Mobile application for field data collection and query: Example from wildlife research (Invited)

NASA Astrophysics Data System (ADS)

Bateman, H.; Lindquist, T.; Whitehouse, R.

2013-12-01

Field data collection is often used in many scientific disciplines and effective approaches rely on accurate data collection and recording. We designed a smartphone and tablet application (app) for field-collected data and tested it during a study on wildlife. The objective of our study was to determine the effectiveness of mobile applications in wildlife field research. Student software developers designed applications for mobile devices on the iOS and Android operating systems. Both platforms had similar user interactions via data entry on a touch screen using pre-programmed fields, checkboxes, drop-down menus, and keypad entry. The mobile application included features to insure collection of all measurements in the field through pop-up messages and could proof entries for valid formats. We used undergraduate student subjects to compare the duration of data recording and data entry, and the frequency of errors between the mobile application and traditional (paper) techniques. We field-tested the mobile application using an existing study on wildlife. From the field, technicians could query a database stored on a mobile device to view histories of previously captured animals. Overall, we found that because the mobile application allowed us to enter data in a digital format in the field we could eliminate timely steps to process handwritten data sheets and double-checking data entries. We estimated that, for a 2-month project, using the mobile application instead of traditional data entry and proofing reduced our total project time by 10%. To our knowledge, this is the first application developed for mobile devices for wildlife users interesting in viewing animal capture histories from the field and could be developed for use in other areas of field research.

Dependence of mobility on shallow localized gap states in single-crystal organic field-effect-transistors

NASA Astrophysics Data System (ADS)

Butko, V. Y.; So, W.; Lang, D. V.; Chi, X.; Lashley, J. C.; Ramirez, A. P.

2009-12-01

In order to optimize the performance of molecular organic electronic devices it is important to study the intermolecular density of states and charge transport mechanisms in the environment of crystalline organic material. Using this approach in Field Effect Transistors (FETs) we show that material purification improves carrier mobility and decreases density of the deep localized electronic state. We also report a general exponential energy dependence of the density of localized states in a vicinity of the mobility edge (Fermi energies up to ∼7 times higher than the thermal energy (kT)) in a variety of the extensively purified molecular organic crystal FETs. This observation and the low activation energy of the order of ∼kT suggest that molecular structural misplacements of the sizes that are comparable with thermal molecular modes rather than impurity deep traps play a role in formation of these shallow states. We find that the charge carrier mobility in the FET nanochannels, μeff, is parameterized by two factors, the free-carrier mobility, μ0, and the ratio of the free carrier density to the total carrier density induced by gate bias. Crystalline FETs fabricated from rubrene, pentacene, and tetracene have a high free-carrier mobility, μ0∼50 cm2/Vs, at 300 K with lower device μeff dominated by localized shallow gap states. This relationship suggests that further improvements in electronic performance could be possible with enhanced device quality.

Voltage sweep ion mobility spectrometry.

PubMed

Davis, Eric J; Williams, Michael D; Siems, William F; Hill, Herbert H

2011-02-15

Ion mobility spectrometry (IMS) is a rapid, gas-phase separation technique that exhibits excellent separation of ions as a standalone instrument. However, IMS cannot achieve optimal separation power with both small and large ions simultaneously. Similar to the general elution problem in chromatography, fast ions are well resolved using a low electric field (50-150 V/cm), whereas slow drifting molecules are best separated using a higher electric field (250-500 V/cm). While using a low electric field, IMS systems tend to suffer from low ion transmission and low signal-to-noise ratios. Through the use a novel voltage algorithm, some of these effects can be alleviated. The electric field was swept from low to high while monitoring a specific drift time, and the resulting data were processed to create a 'voltage-sweep' spectrum. If an optimal drift time is calculated for each voltage and scanned simultaneously, a spectrum may be obtained with optimal separation throughout the mobility range. This increased the resolving power up to the theoretical maximum for every peak in the spectrum and extended the peak capacity of the IMS system, while maintaining accurate drift time measurements. These advantages may be extended to any IMS, requiring only a change in software.

Mobile Purposive-Extensive-Podcast-Listening versus Mobile Self-Regulated-Podcast-Development: A Critical Framework for Designing Foreign Language Listening

ERIC Educational Resources Information Center

Sendag, Serkan; Caner, Mustafa; Kafes, Hüseyin

2014-01-01

Nowadays mobile technologies are widely employed in almost all fields of education for varying reasons. The present study intends to explore the role of mobile technologies in the development of students' listening skills in a higher education context. The aim of the present study is twofold; while it seeks for the feasibility of mobile…

The Effects of a Working-Class Background on Community College Faculty: A Critical Ethnography

ERIC Educational Resources Information Center

Dole, Susan McLaughlin

2010-01-01

Fields of inquiry intent on making social class differences visible and relevant in higher education and society at large are newly developing. Researchers continue to identify significant obstacles to degree attainment and hence to social mobility for working-class and low income students. A college student's social class background can…

Effect of Physical Activity versus Health Education on Physical Function, Grip Strength and Mobility.

PubMed

Santanasto, Adam J; Glynn, Nancy W; Lovato, Laura C; Blair, Steven N; Fielding, Roger A; Gill, Thomas M; Guralnik, Jack M; Hsu, Fang-Chi; King, Abby C; Strotmeyer, Elsa S; Manini, Todd M; Marsh, Anthony P; McDermott, Mary M; Goodpaster, Bret H; Pahor, Marco; Newman, Anne B

2017-07-01

Physical activity (PA) reduces the rate of mobility disability, compared with health education (HE), in at risk older adults. It is important to understand aspects of performance contributing to this benefit. To evaluate intervention effects on tertiary physical performance outcomes. The Lifestyle Interventions and Independence for Elders (LIFE) was a multi-centered, single-blind randomized trial of older adults. Eight field centers throughout the United States. 1635 adults aged 78.9 ± 5.2 years, 67.2% women at risk for mobility disability (Short Physical Performance Battery [SPPB] <10). Moderate PA including walking, resistance and balance training compared with HE consisting of topics relevant to older adults. Grip strength, SPPB score and its components (balance, 4 m gait speed, and chair-stands), as well as 400 m walking speed. Total SPPB score was higher in PA versus HE across all follow-up times (overall P = .04) as was the chair-stand component (overall P < .001). No intervention effects were observed for balance (overall P = .12), 4 m gait speed (overall P = .78), or grip strength (overall P = .62). However, 400 m walking speed was faster in PA versus HE group (overall P =<.001). In separate models, 29% of the rate reduction of major mobility disability in the PA versus HE group was explained by change in SPPB score, while 39% was explained by change in the chair stand component. Lower extremity performance (SPPB) was significantly higher in the PA compared with HE group. Changes in chair-stand score explained a considerable portion of the effect of PA on the reduction of major mobility disability-consistent with the idea that preserving muscle strength/power may be important for the prevention of major mobility disability. © 2017, Copyright the Authors Journal compilation © 2017, The American Geriatrics Society.

Reduced growth of soybean seedlings after exposure to weak microwave radiation from GSM 900 mobile phone and base station.

PubMed

Halgamuge, Malka N; Yak, See Kye; Eberhardt, Jacob L

2015-02-01

The aim of this work was to study possible effects of environmental radiation pollution on plants. The association between cellular telephone (short duration, higher amplitude) and base station (long duration, very low amplitude) radiation exposure and the growth rate of soybean (Glycine max) seedlings was investigated. Soybean seedlings, pre-grown for 4 days, were exposed in a gigahertz transverse electromagnetic cell for 2 h to global system for mobile communication (GSM) mobile phone pulsed radiation or continuous wave (CW) radiation at 900 MHz with amplitudes of 5.7 and 41 V m(-1) , and outgrowth was studied one week after exposure. The exposure to higher amplitude (41 V m(-1)) GSM radiation resulted in diminished outgrowth of the epicotyl. The exposure to lower amplitude (5.7 V m(-1)) GSM radiation did not influence outgrowth of epicotyl, hypocotyls, or roots. The exposure to higher amplitude CW radiation resulted in reduced outgrowth of the roots whereas lower CW exposure resulted in a reduced outgrowth of the hypocotyl. Soybean seedlings were also exposed for 5 days to an extremely low level of radiation (GSM 900 MHz, 0.56 V m(-1)) and outgrowth was studied 2 days later. Growth of epicotyl and hypocotyl was found to be reduced, whereas the outgrowth of roots was stimulated. Our findings indicate that the observed effects were significantly dependent on field strength as well as amplitude modulation of the applied field. © 2015 Wiley Periodicals, Inc.

Low electron mobility of field-effect transistor determined by modulated magnetoresistance

NASA Astrophysics Data System (ADS)

Tauk, R.; Łusakowski, J.; Knap, W.; Tiberj, A.; Bougrioua, Z.; Azize, M.; Lorenzini, P.; Sakowicz, M.; Karpierz, K.; Fenouillet-Beranger, C.; Cassé, M.; Gallon, C.; Boeuf, F.; Skotnicki, T.

2007-11-01

Room temperature magnetotransport experiments were carried out on field-effect transistors in magnetic fields up to 10 T. It is shown that measurements of the transistor magnetoresistance and its first derivative with respect to the gate voltage allow the derivation of the electron mobility in the gated part of the transistor channel, while the access/contact resistances and the transistor gate length need not be known. We demonstrate the potential of this method using GaN and Si field-effect transistors and discuss its importance for mobility measurements in transistors with nanometer gate length.

Thermal Gradient During Vacuum-Deposition Dramatically Enhances Charge Transport in Organic Semiconductors: Toward High-Performance N-Type Organic Field-Effect Transistors.

PubMed

Kim, Joo-Hyun; Han, Singu; Jeong, Heejeong; Jang, Hayeong; Baek, Seolhee; Hu, Junbeom; Lee, Myungkyun; Choi, Byungwoo; Lee, Hwa Sung

2017-03-22

A thermal gradient distribution was applied to a substrate during the growth of a vacuum-deposited n-type organic semiconductor (OSC) film prepared from N,N'-bis(2-ethylhexyl)-1,7-dicyanoperylene-3,4:9,10-bis(dicarboxyimide) (PDI-CN2), and the electrical performances of the films deployed in organic field-effect transistors (OFETs) were characterized. The temperature gradient at the surface was controlled by tilting the substrate, which varied the temperature one-dimensionally between the heated bottom substrate and the cooled upper substrate. The vacuum-deposited OSC molecules diffused and rearranged on the surface according to the substrate temperature gradient, producing directional crystalline and grain structures in the PDI-CN2 film. The morphological and crystalline structures of the PDI-CN2 thin films grown under a vertical temperature gradient were dramatically enhanced, comparing with the structures obtained from either uniformly heated films or films prepared under a horizontally applied temperature gradient. The field effect mobilities of the PDI-CN2-FETs prepared using the vertically applied temperature gradient were as high as 0.59 cm 2 V -1 s -1 , more than a factor of 2 higher than the mobility of 0.25 cm 2 V -1 s -1 submitted to conventional thermal annealing and the mobility of 0.29 cm 2 V -1 s -1 from the horizontally applied temperature gradient.

Carrier Propagation Dependence on Applied Potentials in Pentacene Organic Field Effect Transistors Investigated by Impedance Spectroscopy and Electrical Time-of-Flight Techniques

NASA Astrophysics Data System (ADS)

Lin, Jack; Weis, Martin; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2011-04-01

Transient measurements of impedance spectroscopy and electrical time-of-flight (TOF) techniques were used for the evaluation of carrier propagation dependence on applied potentials in a pentacene organic field effect transistor (OFET). These techniques are based on carrier propagation, thus isolates the effect of charge density. The intrinsic mobility which is free from contact resistance effects was obtained by measurement of various channel lengths. The obtained intrinsic mobility shows good correspondence with steady-state current-voltage measurement's saturation mobility. However, their power law relations on mobility vs applied potential resulted in different exponents, suggesting different carrier propagation mechanisms, which is attributable to filling of traps or space charge field in the channel region. The hypothesis was verified by a modified electrical TOF experiment which demonstrated how the accumulated charges in the channel influence the effective mobility.

Influence of quasi-particle density over polaron mobility in armchair graphene nanoribbons.

PubMed

Silva, Gesiel Gomes; da Cunha, Wiliam Ferreira; de Sousa Junior, Rafael Timóteo; Almeida Fonseca, Antonio Luciano; Ribeiro Júnior, Luiz Antônio; E Silva, Geraldo Magela

2018-06-20

An important aspect concerning the performance of armchair graphene nanoribbons (AGNRs) as materials for conceiving electronic devices is related to the mobility of charge carriers in these systems. When several polarons are considered in the system, a quasi-particle wave function can be affected by that of its neighbor provided the two are close enough. As the overlap may affect the transport of the carrier, the question concerning how the density of polarons affect its mobility arises. In this work, we investigate such dependence for semiconducting AGNRs in the scope of nonadiabatic molecular dynamics. Our results unambiguously show an impact of the density on both the stability and average velocity of the quasi-particles. We have found a phase transition between regimes where increasing density stops inhibiting and starts promoting mobility; densities higher than 7 polarons per 45 Å present increasing mean velocity with increasing density. We have also established three different regions relating electric field and average velocity. For the lowest electric field regime, surpassing the aforementioned threshold results in overcoming the 0.3 Å fs-1 limit, thus representing a transition between subsonic and supersonic regimes. For the highest of the electric fields, density effects alone are responsible for a stunning difference of 1.5 Å fs-1 in the mean carrier velocity.

Characterization of polymerized liposomes using a combination of dc and cyclical electrical field-flow fractionation.

PubMed

Sant, Himanshu J; Chakravarty, Siddharth; Merugu, Srinivas; Ferguson, Colin G; Gale, Bruce K

2012-10-02

Characterization of polymerized liposomes (PolyPIPosomes) was carried out using a combination of normal dc electrical field-flow fractionation and cyclical electrical field-flow fractionation (CyElFFF) as an analytical technique. The constant nature of the carrier fluid and channel configuration for this technique eliminates many variables associated with multidimensional analysis. CyElFFF uses an oscillating field to induce separation and is performed in the same channel as standard dc electrical field-flow fractionation separation. Theory and experimental methods to characterize nanoparticles in terms of their sizes and electrophoretic mobilities are discussed in this paper. Polystyrene nanoparticles are used for system calibration and characterization of the separation performance, whereas polymerized liposomes are used to demonstrate the applicability of the system to biomedical samples. This paper is also the first to report separation and a higher effective field when CyElFFF is operated at very low applied voltages. The technique is shown to have the ability to quantify both particle size and electrophoretic mobility distributions for colloidal polystyrene nanoparticles and PolyPIPosomes.

Channel scaling and field-effect mobility extraction in amorphous InZnO thin film transistors

NASA Astrophysics Data System (ADS)

Lee, Sunghwan; Song, Yang; Park, Hongsik; Zaslavsky, A.; Paine, D. C.

2017-09-01

Amorphous oxide semiconductors (AOSs) based on indium oxides are of great interest for next generation ultra-high definition displays that require much smaller pixel driving elements. We describe the scaling behavior in amorphous InZnO thin film transistors (TFTs) with a significant decrease in the extracted field-effect mobility μFE with channel length L (from 39.3 to 9.9 cm2/V·s as L is reduced from 50 to 5 μm). Transmission line model measurements reveal that channel scaling leads to a significant μFE underestimation due to contact resistance (RC) at the metallization/channel interface. Therefore, we suggest a method of extracting correct μFE when the TFT performance is significantly affected by RC. The corrected μFE values are higher (45.4 cm2/V·s) and nearly independent of L. The results show the critical effect of contact resistance on μFE measurements and suggest strategies to determine accurate μFE when a TFT channel is scaled.

The Role of Hedonic Behavior in Reducing Perceived Risk

PubMed Central

Jia, Jayson S.; Jia, Jianmin; Hsee, Christopher K.; Shiv, Baba

2016-01-01

Understanding how human populations naturally respond to and cope with risk is important for fields ranging from psychology to public health. We used geophysical and individual-level mobile-phone data (mobile-apps, telecommunications, and Web usage) of 157,358 victims of the 2013 Ya’an earthquake to diagnose the effects of the disaster and investigate how experiencing real risk (at different levels of intensity) changes behavior. Rather than limiting human activity, higher earthquake intensity resulted in graded increases in usage of communications apps (e.g., social networking, messaging), functional apps (e.g., informational tools), and hedonic apps (e.g., music, videos, games). Combining mobile data with a field survey (N = 2,000) completed 1 week after the earthquake, we use an instrumental-variable approach to show that only increases in hedonic behavior reduced perceived risk. Thus, hedonic behavior could potentially serve as a population-scale coping and recovery strategy that is often missing in risk management and policy considerations. PMID:27881710

The Role of Hedonic Behavior in Reducing Perceived Risk.

PubMed

Jia, Jayson S; Jia, Jianmin; Hsee, Christopher K; Shiv, Baba

2017-01-01

Understanding how human populations naturally respond to and cope with risk is important for fields ranging from psychology to public health. We used geophysical and individual-level mobile-phone data (mobile-apps, telecommunications, and Web usage) of 157,358 victims of the 2013 Ya'an earthquake to diagnose the effects of the disaster and investigate how experiencing real risk (at different levels of intensity) changes behavior. Rather than limiting human activity, higher earthquake intensity resulted in graded increases in usage of communications apps (e.g., social networking, messaging), functional apps (e.g., informational tools), and hedonic apps (e.g., music, videos, games). Combining mobile data with a field survey ( N = 2,000) completed 1 week after the earthquake, we use an instrumental-variable approach to show that only increases in hedonic behavior reduced perceived risk. Thus, hedonic behavior could potentially serve as a population-scale coping and recovery strategy that is often missing in risk management and policy considerations.

A Single Polyaniline Nanofiber Field Effect Transistor and Its Gas Sensing Mechanisms

PubMed Central

Chen, Dajing; Lei, Sheng; Chen, Yuquan

2011-01-01

A single polyaniline nanofiber field effect transistor (FET) gas sensor fabricated by means of electrospinning was investigated to understand its sensing mechanisms and optimize its performance. We studied the morphology, field effect characteristics and gas sensitivity of conductive nanofibers. The fibers showed Schottky and Ohmic contacts based on different electrode materials. Higher applied gate voltage contributes to an increase in gas sensitivity. The nanofiber transistor showed a 7% reversible resistance change to 1 ppm NH3 with 10 V gate voltage. The FET characteristics of the sensor when exposed to different gas concentrations indicate that adsorption of NH3 molecules reduces the carrier mobility in the polyaniline nanofiber. As such, nanofiber-based sensors could be promising for environmental and industrial applications. PMID:22163969

Knowledge Utility: From Social Relevance to Knowledge Mobilization

ERIC Educational Resources Information Center

Naidorf, Judith

2014-01-01

In recent years, a more sophisticated vocabulary has emerged in the field of higher education. Categories such as" socially relevant research"; "knowledge mobilization"; "research impact"; "innovation"; and "university priorities" have appeared. At first glance, these words may appear neutral,…

Giant enhancement of the carrier mobility in silicon nanowires with diamond coating.

PubMed

Fonoberov, Vladimir A; Balandin, Alexander A

2006-11-01

We show theoretically that the low-field carrier mobility in silicon nanowires can be greatly enhanced by embedding the nanowires within a hard material such as diamond. The electron mobility in the cylindrical silicon nanowires with 4-nm diameter, which are coated with diamond, is 2 orders of magnitude higher at 10 K and a factor of 2 higher at room temperature than the mobility in a free-standing silicon nanowire. The importance of this result for the downscaled architectures and possible silicon-carbon nanoelectronic devices is augmented by an extra benefit of diamond, a superior heat conductor, for thermal management.

Theory for the anomalous electron transport in Hall-effect thrusters

NASA Astrophysics Data System (ADS)

Lafleur, Trevor; Baalrud, Scott; Chabert, Pascal

2016-09-01

Using insights from particle-in-cell (PIC) simulations, we develop a kinetic theory to explain the anomalous cross-field electron transport in Hall-effect thrusters (HETs). The large axial electric field in the acceleration region of HETs, together with the radially applied magnetic field, causes electrons to drift in the azimuthal direction with a very high velocity. This drives an electron cyclotron instability that produces large amplitude oscillations in the plasma density and azimuthal electric field, and which is convected downstream due to the large axial ion drift velocity. The frequency and wavelength of the instability are of the order of 5 MHz and 1 mm respectively, while the electric field amplitude can be of a similar magnitude to axial electric field itself. The instability leads to enhanced electron scattering many orders of magnitude higher than that from standard electron-neutral or electron-ion Coulomb collisions, and gives electron mobilities in good agreement with experiment. Since the instability is a strong function of almost all plasma properties, the mobility cannot in general be fitted with simple 1/B or 1/B2 scaling laws, and changes to the secondary electron emission coefficient of the HET channel walls are expected to play a role in the evolution of the instability. This work received financial support from a CNES postdoctoral research award.

Higher mobility of butterflies than moths connected to habitat suitability and body size in a release experiment

PubMed Central

Kuussaari, Mikko; Saarinen, Matias; Korpela, Eeva-Liisa; Pöyry, Juha; Hyvönen, Terho

2014-01-01

Mobility is a key factor determining lepidopteran species responses to environmental change. However, direct multispecies comparisons of mobility are rare and empirical comparisons between butterflies and moths have not been previously conducted. Here, we compared mobility between butterflies and diurnal moths and studied species traits affecting butterfly mobility. We experimentally marked and released 2011 butterfly and 2367 moth individuals belonging to 32 and 28 species, respectively, in a 25 m × 25 m release area within an 11-ha, 8-year-old set-aside field. Distance moved and emigration rate from the release habitat were recorded by species. The release experiment produced directly comparable mobility data in 18 butterfly and 9 moth species with almost 500 individuals recaptured. Butterflies were found more mobile than geometroid moths in terms of both distance moved (mean 315 m vs. 63 m, respectively) and emigration rate (mean 54% vs. 17%, respectively). Release habitat suitability had a strong effect on emigration rate and distance moved, because butterflies tended to leave the set-aside, if it was not suitable for breeding. In addition, emigration rate and distance moved increased significantly with increasing body size. When phylogenetic relatedness among species was included in the analyses, the significant effect of body size disappeared, but habitat suitability remained significant for distance moved. The higher mobility of butterflies than geometroid moths can largely be explained by morphological differences, as butterflies are more robust fliers. The important role of release habitat suitability in butterfly mobility was expected, but seems not to have been empirically documented before. The observed positive correlation between butterfly size and mobility is in agreement with our previous findings on butterfly colonization speed in a long-term set-aside experiment and recent meta-analyses on butterfly mobility. PMID:25614794

High mobility organic field-effect transistor based on water-soluble deoxyribonucleic acid via spray coating

NASA Astrophysics Data System (ADS)

Shi, Wei; Han, Shijiao; Huang, Wei; Yu, Junsheng

2015-01-01

High mobility organic field-effect transistors (OFETs) by inserting water-soluble deoxyribonucleic acid (DNA) buffer layer between electrodes and pentacene film through spray coating process were fabricated. Compared with the OFETs incorporated with DNA in the conventional organic solvents of ethanol and methanol: water mixture, the water-soluble DNA based OFET exhibited an over four folds enhancement of field-effect mobility from 0.035 to 0.153 cm2/Vs. By characterizing the surface morphology and the crystalline structure of pentacene active layer through atomic force microscope and X-ray diffraction, it was found that the adoption of water solvent in DNA solution, which played a key role in enhancing the field-effect mobility, was ascribed to both the elimination of the irreversible organic solvent-induced bulk-like phase transition of pentacene film and the diminution of a majority of charge trapping at interfaces in OFETs.

High pressure effects in high-field asymmetric waveform ion mobility spectrometry.

PubMed

Wang, Yonghuan; Wang, Xiaozhi; Li, Lingfen; Chen, Chilai; Xu, Tianbai; Wang, Tao; Luo, Jikui

2016-08-30

High-Field Asymmetric Waveform Ion Mobility Spectrometry (FAIMS) is an analytical technique based on the principle of non-linear electric field dependence of coefficient of mobility of ions for separation that was originally conceived in the Soviet Union in the early 1980s. Being well developed over the past decades, FAIMS has become an efficient method for the separation and characterization of gas-phase ions at ambient pressure, often in air, to detect trace amounts of chemical species including explosives, toxic chemicals, chemical warfare agents and other compounds. However the resolution of FAIMS and ion separation capability need to be improved for more applications of the technique. The effects of above-ambient pressure varying from 1 to 3 atm on peak position, resolving power, peak width, and peak intensity are investigated theoretically and experimentally using micro-fabricated planar FAIMS in purified air. Peak positions, varying with pressure in a way as a function of dispersion voltage, could be simplified by expressing both compensation and dispersion fields in Townsend units for E/N, the ratio of electric field intensity (E) to the gas number density (N). It is demonstrated that ion Townsend-scale peak positions remain unchanged for a range of pressures investigated, implying that the higher the pressure is, stronger compensation and separation fields are needed within limits of air breakdown field. Increase in pressure is found to separate ions that could not be distinguished in ambient pressure, which could be interpreted as the differentials of ions' peak compensation voltage expanded wider than the dilation of peak widths leading to resolving power enhancement with pressure. Increase in pressure can also result in an increase in peak intensity. Copyright © 2016 John Wiley & Sons, Ltd.

Magnetotransport in heterostructures of transition metal dichalcogenides and graphene

NASA Astrophysics Data System (ADS)

Völkl, Tobias; Rockinger, Tobias; Drienovsky, Martin; Watanabe, Kenji; Taniguchi, Takashi; Weiss, Dieter; Eroms, Jonathan

2017-09-01

We use a van der Waals pickup technique to fabricate different heterostructures containing WSe2(WS2) and graphene. The heterostructures were structured by plasma etching, contacted by one-dimensional edge contacts, and a top gate was deposited. For graphene /WSe2/SiO2 samples we observe mobilities of ˜12 000 cm2V-1s-1 . Magnetic-field-dependent resistance measurements on these samples show a peak in the conductivity at low magnetic fields. This dip is attributed to the weak antilocalization (WAL) effect, stemming from spin-orbit coupling. Samples where graphene is encapsulated between WSe2(WS2) and hexagonal boron nitride show a much higher mobility of up to ˜120 000 cm2V-1s-1 . However, in these samples no WAL peak can be observed. We attribute this to a transition from the diffusive to the quasiballistic regime. At low magnetic fields a resistance peak appears, which we ascribe to a size effect due to boundary scattering. Shubnikov-de Haas oscillations in fully encapsulated samples show all integer filling factors due to complete lifting of the spin and valley degeneracies.

Characterization of applied fields for ion mobility in traveling wave based structures for lossless ion manipulations (SLIM)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hamid, Ahmed M.; Prabhakaran Nair Syamala Amma, Aneesh; Garimella, Venkata BS

2018-03-21

Ion mobility (IM) is rapidly gaining attention for the analysis of biomolecules due to the ability to distinguish the shapes of ions. However, conventional constant electric field drift tube IM has limited resolving power, constrained by practical limitations on the path length and maximum applied voltage. The implementation of traveling waves (TW) in IM removes the latter limitation, allowing higher resolution to be achieved using extended path lengths. These can be readily obtainable in structures for lossless ion manipulations (SLIM), which are fabricated from electric fields that are generated by appropriate potentials applied to arrays of electrodes patterned on twomore » parallel surfaces. In this work we have investigated the relationship between the various SLIM variables, such as electrode dimensions, inter-surface gap, and the TW applied voltages, that directly impact the fields experienced by ions. Ion simulation and theoretical calculations have been utilized to understand the dependence of SLIM geometry and effective electric field. The variables explored impact both ion confinement and the observed IM resolution in Structures for Lossless Ion Manipulations (SLIM) modules.« less

Characterization of applied fields for ion mobility separations in traveling wave based structures for lossless ion manipulations (SLIM)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hamid, Ahmed M.; Prabhakaran, Aneesh; Garimella, Sandilya V. B.

Ion mobility (IM) is rapidly gaining attention for the analysis of biomolecules due to the ability to distinguish the shapes of ions. However, conventional constant electric field drift tube IM has limited resolving power, constrained by practical limitations on the path length and maximum applied voltage. The implementation of traveling waves (TW) in IM removes the latter limitation, allowing higher resolution to be achieved using extended path lengths. These can be readily obtainable in structures for lossless ion manipulations (SLIM), which are fabricated from electric fields that are generated by appropriate potentials applied to arrays of electrodes patterned on twomore » parallel surfaces. In this work we have investigated the relationship between the various SLIM variables, such as electrode dimensions, inter-surface gap, and the TW applied voltages, that directly impact the fields experienced by ions. Ion simulation and theoretical calculations have been utilized to understand the dependence of SLIM geometry and effective electric field. The variables explored impact both ion confinement and the observed IM resolution in Structures for Lossless Ion Manipulations (SLIM) modules.« less

Charge Transport in Semiconductor Nanocrystal Solids

NASA Astrophysics Data System (ADS)

Talapin, Dmitri; Shevchenko, Elena; Lee, Jong Soo; Urban, Jeffrey; Mitzi, David; Murray, Christopher

2007-03-01

Self-assembly of chemically-synthesized nanocrystals can yield complex long-range ordered structures which can be used as model systems for studying transport phenomena in low-dimensional materials [1]. Treatment of close-packed PbSe nanocrystal arrays with hydrazine enhanced exchange coupling between the nanocrystals and improved conductance by more than ten orders of magnitude compared to native nanocrystal films [2]. The conductivity of PbSe nanocrystal solids can be switched between n- and p-type transports by controlling the saturation of electronic states at nanocrystal surfaces. Nanocrystal arrays form the n- and p-channels of field-effect transistors with electron and hole mobilities of 2.5 cm^2V-1s-1 and 0.3 cm^2V-1s-1, respectively, and current modulation Ion/Ioff˜10^3-10^4. The field-effect mobility in PbSe nanocrystal arrays is higher than the mobility of organic transistors while the easy switch between n- and p-transport allows realization of complimentary circuits and p-n junctions for nanocrystal-based solar cells and thermoelectric devices. [1] E. V. Shevchenko, D. V. Talapin, N. A. Kotov, S. O'Brien, C. B. Murray. Nature 439, 55 (2006). [2] D. V. Talapin, C. B. Murray. Science 310, 86 (2005).

Solution-Processed Donor-Acceptor Polymer Nanowire Network Semiconductors For High-Performance Field-Effect Transistors

PubMed Central

Lei, Yanlian; Deng, Ping; Li, Jun; Lin, Ming; Zhu, Furong; Ng, Tsz-Wai; Lee, Chun-Sing; Ong, Beng S.

2016-01-01

Organic field-effect transistors (OFETs) represent a low-cost transistor technology for creating next-generation large-area, flexible and ultra-low-cost electronics. Conjugated electron donor-acceptor (D-A) polymers have surfaced as ideal channel semiconductor candidates for OFETs. However, high-molecular weight (MW) D-A polymer semiconductors, which offer high field-effect mobility, generally suffer from processing complications due to limited solubility. Conversely, the readily soluble, low-MW D-A polymers give low mobility. We report herein a facile solution process which transformed a lower-MW, low-mobility diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (I) into a high crystalline order and high-mobility semiconductor for OFETs applications. The process involved solution fabrication of a channel semiconductor film from a lower-MW (I) and polystyrene blends. With the help of cooperative shifting motion of polystyrene chain segments, (I) readily self-assembled and crystallized out in the polystyrene matrix as an interpenetrating, nanowire semiconductor network, providing significantly enhanced mobility (over 8 cm2V−1s−1), on/off ratio (107), and other desirable field-effect properties that meet impactful OFET application requirements. PMID:27091315

Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors.

PubMed

Lv, Y J; Song, X B; Wang, Y G; Fang, Y L; Feng, Z H

2016-12-01

Ultra-thin AlN/GaN heterostructure field-effect transistors (HFETs) with, and without, SiN passivation were fabricated by the same growth and device processes. Based on the measured DC characteristics, including the capacitance-voltage (C-V) and output current-voltage (I-V) curves, the variation of electron mobility with gate bias was found to be quite different for devices with, and without, SiN passivation. Although the AlN barrier layer is ultra thin (c. 3 nm), it was proved that SiN passivation induces no additional tensile stress and has no significant influence on the piezoelectric polarization of the AlN layer using Hall and Raman measurements. The SiN passivation was found to affect the surface properties, thereby increasing the electron density of the two-dimensional electron gas (2DEG) under the access region. The higher electron density in the access region after SiN passivation enhanced the electrostatic screening for the non-uniform distributed polarization charges, meaning that the polarization Coulomb field scattering has a weaker effect on the electron drift mobility in AlN/GaN-based devices.

Temperature Dependence of Field-Effect Mobility in Organic Thin-Film Transistors: Similarity to Inorganic Transistors.

PubMed

Okada, Jun; Nagase, Takashi; Kobayashi, Takashi; Naito, Hiroyoshi

2016-04-01

Carrier transport in solution-processed organic thin-film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8-BTBT) has been investigated in a wide temperature range from 296 to 10 K. The field-effect mobility shows thermally activated behavior whose activation energy becomes smaller with decreasing temperature. The temperature dependence of field-effect mobility found in C8-BTBT is similar to that of others materials: organic semiconducting polymers, amorphous oxide semiconductors and hydrogenated amorphous silicon. These results indicate that hopping transport between isoenergetic localized states becomes dominated in a low temperature regime in these materials.

Effects of Gold Nanoparticles on Pentacene Organic Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Lee, Keanchuan; Weis, Martin; Ou-Yang, Wei; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2011-04-01

The effect of gold nanoparticles (NPs) on pentacene organic field-effect transistors (OFETs) was being investigated by both DC and AC methods, which are current-voltage (I-V) measurements in steady-state and impedance spectroscopy (IS) respectively. Here poly(vinyl alcohol) (PVA) and PVA blended with Au NPs as composite are spin-coated on SiO2 as gate-insulator for top-contact pentacene OFET. The characteristics of the device were being investigated based on the contact resistance, trapped charges, effective mobility and threshold voltage based on transfer characteristics of OFET. Results revealed that OFET with NPs exhibited larger hysteresis and higher contact resistance at high voltage region. IS measurements were performed and the fitting of results by the Maxwell-Wagner equivalent circuit showed that for device with NPs a series of capacitance and resistance which represents trapping must be introduced in order to have agreeable fitting. The fitting had helped to clarify the reason behind the higher contact resistance and bigger hysteresis which was mainly caused by the space charge field formed by the traps when Au NPs were introduced into the device.

Electromagnetic fields in the treatment of chronic lower back pain in patients with degenerative disc disease

PubMed Central

Arneja, Amarjit S; Kotowich, Alan; Staley, Doug; Summers, Randy; Tappia, Paramjit S

2016-01-01

Aim: To examine the effects of low-amplitude, low frequency electromagnetic field therapy (EMF) therapy in patients with persistent chronic lower back pain associated with degenerative disc disease. Design: Double-blind, randomized and placebo controlled. Intervention: EMF using a medical device resonator; control group underwent same procedures, except the device was turned off. Outcome measures: Pain reduction and mobility. Results: Improvements in overall physical health, social functioning and reduction in bodily pain were observed in the EMF group. The pain relief rating scale showed a higher level of pain relief at the target area in the EMF group. An increase in left lateral mobility was seen only in the EMF group. Conclusion: EMF treatment may be of benefit to patients with chronic nonresponsive lower back pain associated with degenerative disc disease. PMID:28031951

Flood of May 5 and 6, 1981, Mobile, Alabama

USGS Publications Warehouse

Ming, C.O.; Nelson, G.H.

1981-01-01

Heavy and intense rainfall in the late evening and early morning hours, May 5 and 6, 1981, caused widespread flooding along streams and low-lying areas in the port city of Mobile, Ala. More than 12 inches of rain fell between 6 p.m. May 5, and 3 a.m. May 6. Damage caused by flooding was estimated by the Mobile Department of Public Works to be millions of dollars. Maximum water surface elevations on streams in the area were 2 to 3 feet higher than those that occurred during a similar flood in April 1980. The approximate extent of flooding delineated on maps using flood profiles obtained by field surveys will provide a basis for formulating effective flood plain zoning that could minimize existing and future flood problems. (USGS)

[Design and Implementation of a Mobile Operating Room Information Management System Based on Electronic Medical Record].

PubMed

Liu, Baozhen; Liu, Zhiguo; Wang, Xianwen

2015-06-01

A mobile operating room information management system with electronic medical record (EMR) is designed to improve work efficiency and to enhance the patient information sharing. In the operating room, this system acquires the information from various medical devices through the Client/Server (C/S) pattern, and automatically generates XML-based EMR. Outside the operating room, this system provides information access service by using the Browser/Server (B/S) pattern. Software test shows that this system can correctly collect medical information from equipment and clearly display the real-time waveform. By achieving surgery records with higher quality and sharing the information among mobile medical units, this system can effectively reduce doctors' workload and promote the information construction of the field hospital.

Ability of Students to Recognize the Relationship between Using Mobile Apps for Learning during Fieldwork and the Development of Graduate Attributes

ERIC Educational Resources Information Center

France, Derek; Powell, Victoria; Mauchline, Alice L.; Welsh, Katharine; Park, Julian; Whalley, W. Brian; Rewhorn, Sonja

2016-01-01

The increasing importance of employability in Higher Education curricula and the prevalence of using mobile devices for field-based learning prompted an investigation into student awareness of the relationship between the use of mobile apps for learning and the development of graduate attributes (GAs) (and the link to employability). The results…

Electrophoretic ratcheting of spherical particles in a simple microfluidic device: making particles move against the direction of the net electric field

NASA Astrophysics Data System (ADS)

Wang, Hanyang; Slater, Gary; Haan, Hendrick

We examine the electrophoresis of spherical particles in microfluidic devices made of alternating wells and narrow channels a type of system previously used to separate DNA molecules. Using computer simulations, we first show why it should be possible to separate particles having the same free-solution mobility using these systems in DC fields. Interestingly, in some of the systems we studied, the mobility shows an inversion as the field intensity is increased: while small particles have higher mobilities at low fields, the situation is reversed at high fields with the larger particles then moving faster. The resulting nonlinearity allows us to use asymmetric AC electric fields to build a ratchet in which particles have a net size-dependent velocity in the presence of an unbiased (zero-mean) AC field. Exploiting the inversion mentioned above, we show how to build pulsed field sequences that make particles move against the net field (an example of negative mobility). Finally, we demonstrate that it is possible to use these pulsed fields to make particles of different sizes move in opposite directions even though their charge have the same sign. Potential uses of these idea are discussed. Gary is my supervisor in my Master program.

Influence of gate width on gate-channel carrier mobility in AlGaN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Yang, Ming; Ji, Qizheng; Gao, Zhiliang; Zhang, Shufeng; Lin, Zhaojun; Yuan, Yafei; Song, Bo; Mei, Gaofeng; Lu, Ziwei; He, Jihao

2017-11-01

For the fabricated AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate widths, the gate-channel carrier mobility is experimentally obtained from the measured current-voltage and capacitance-voltage curves. Under each gate voltage, the mobility gets lower with gate width increasing. Analysis shows that the phenomenon results from the polarization Coulomb field (PCF) scattering, which originates from the irregularly distributed polarization charges at the AlGaN/GaN interface. The device with a larger gate width is with a larger PCF scattering potential and a stronger PCF scattering intensity. As a function of gate width, PCF scattering potential shows a same trend with the mobility variation. And the theoretically calculated mobility values fits well with the experimentally obtained values. Varying gate widths will be a new perspective for the improvement of device characteristics by modulating the gate-channel carrier mobility.

Impact of optical phonon scattering on inversion channel mobility in 4H-SiC trenched MOSFETs

NASA Astrophysics Data System (ADS)

Kutsuki, Katsuhiro; Kawaji, Sachiko; Watanabe, Yukihiko; Onishi, Toru; Fujiwara, Hirokazu; Yamamoto, Kensaku; Yamamoto, Toshimasa

2017-04-01

Temperature characteristics of the channel mobility were investigated for 4H-SiC trenched MOSFETs in the range from 30 to 200 °C. The conventional model of channel mobility limited by carrier scattering is based on Si-MOSFETs and shows a greatly different channel mobility from the experimental value, especially at high temperatures. On the other hand, our improved mobility model taking into account optical phonon scattering yielded results in excellent agreement with experimental results. Moreover, the major factors limiting the channel mobility were found to be Coulomb scattering in a low effective field (<0.7 MV/cm) and optical phonon scattering in a high effective field.

Improved electron injection in all-solution-processed n-type organic field-effect transistors with an inkjet-printed ZnO electron injection layer

NASA Astrophysics Data System (ADS)

Roh, Jeongkyun; Kim, Hyeok; Park, Myeongjin; Kwak, Jeonghun; Lee, Changhee

2017-10-01

Interface engineering for the improved injection properties of all-solution-processed n-type organic field-effect transistors (OFETs) arising from the use of an inkjet-printed ZnO electron injection layer were demonstrated. The characteristics of ZnO in terms of electron injection and transport were investigated, and then we employed ZnO as the electron injection layer via inkjet-printing during the fabrication of all-solution-processed, n-type OFETs. With the inkjet-printed ZnO electron injection layer, the devices exhibited approximately five-fold increased mobility (0.0058 cm2/V s to 0.030 cm2/V s), more than two-fold increased charge concentration (2.76 × 1011 cm-2 to 6.86 × 1011 cm-2), and two orders of magnitude reduced device resistance (120 MΩ cm to 3 MΩ cm). Moreover, n-type polymer form smoother film with ZnO implying denser packing of polymer, which results in higher mobility.

High mobility organic field-effect transistor based on water-soluble deoxyribonucleic acid via spray coating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Wei; Han, Shijiao; Huang, Wei

High mobility organic field-effect transistors (OFETs) by inserting water-soluble deoxyribonucleic acid (DNA) buffer layer between electrodes and pentacene film through spray coating process were fabricated. Compared with the OFETs incorporated with DNA in the conventional organic solvents of ethanol and methanol: water mixture, the water-soluble DNA based OFET exhibited an over four folds enhancement of field-effect mobility from 0.035 to 0.153 cm{sup 2}/Vs. By characterizing the surface morphology and the crystalline structure of pentacene active layer through atomic force microscope and X-ray diffraction, it was found that the adoption of water solvent in DNA solution, which played a key role inmore » enhancing the field-effect mobility, was ascribed to both the elimination of the irreversible organic solvent-induced bulk-like phase transition of pentacene film and the diminution of a majority of charge trapping at interfaces in OFETs.« less

Undoped polythiophene field-effect transistors with mobility of 1 cm2 V-1 s-1

NASA Astrophysics Data System (ADS)

Hamadani, B. H.; Gundlach, D. J.; McCulloch, I.; Heeney, M.

2007-12-01

We report on charge transport in organic field-effect transistors based on poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as the active polymer layer with saturation field-effect mobilities as large as 1cm2V-1s-1. This is achieved by employing Pt instead of the commonly used Au as the contacting electrode and allows for a significant reduction in the metal/polymer contact resistance. The mobility increases as a function of decreasing channel length, consistent with a Poole-Frenkel model of charge transport, and reaches record mobilities of 1cm2V-1s-1 or more at channel lengths on the order of few microns in an undoped solution-processed polymer cast on an oxide gate dielectric.

Remarkable enhancement of charge carrier mobility of conjugated polymer field-effect transistors upon incorporating an ionic additive

PubMed Central

Luo, Hewei; Yu, Chenmin; Liu, Zitong; Zhang, Guanxin; Geng, Hua; Yi, Yuanping; Broch, Katharina; Hu, Yuanyuan; Sadhanala, Aditya; Jiang, Lang; Qi, Penglin; Cai, Zhengxu; Sirringhaus, Henning; Zhang, Deqing

2016-01-01

Organic semiconductors with high charge carrier mobilities are crucial for flexible electronic applications. Apart from designing new conjugated frameworks, different strategies have been explored to increase charge carrier mobilities. We report a new and simple approach to enhancing the charge carrier mobility of DPP-thieno[3,2-b]thiophene–conjugated polymer by incorporating an ionic additive, tetramethylammonium iodide, without extra treatments into the polymer. The resulting thin films exhibit a very high hole mobility, which is higher by a factor of 24 than that of thin films without the ionic additive under the same conditions. On the basis of spectroscopic grazing incidence wide-angle x-ray scattering and atomic force microscopy studies as well as theoretical calculations, the remarkable enhancement of charge mobility upon addition of tetramethylammonium iodide is attributed primarily to an inhibition of the torsion of the alkyl side chains by the presence of the ionic species, facilitating a more ordered lamellar packing of the alkyl side chains and interchain π-π interactions. PMID:27386541

Graphene-graphite oxide field-effect transistors.

PubMed

Standley, Brian; Mendez, Anthony; Schmidgall, Emma; Bockrath, Marc

2012-03-14

Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO(2) or HfO(2). In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO(2), typically ~1-3 × 10(8) V/m, while its dielectric constant is slightly higher, κ ≈ 4.3. © 2012 American Chemical Society

Transport and breakdown analysis for improved figure-of-merit for AlGaN power devices

NASA Astrophysics Data System (ADS)

Coltrin, Michael E.; Kaplar, Robert J.

2017-02-01

Mobility and critical electric field for bulk AlxGa1-xN alloys across the full composition range (0 ≤ x ≤ 1) are analyzed to address the potential application of this material system for power electronics. Calculation of the temperature-dependent electron mobility includes the potential limitations due to different scattering mechanisms, including alloy, optical polar phonon, deformation potential, and piezoelectric scattering. The commonly used unipolar figure of merit (appropriate for vertical-device architectures), which increases strongly with increasing mobility and critical electric field, is examined across the alloy composition range to estimate the potential performance in power electronics applications. Alloy scattering is the dominant limitation to mobility and thus also for the unipolar figure of merit. However, at higher alloy compositions, the limitations due to alloy scattering are overcome by increased critical electric field. These trade-offs, and their temperature dependence, are quantified in the analysis.

3D modeling of dual-gate FinFET.

PubMed

Mil'shtein, Samson; Devarakonda, Lalitha; Zanchi, Brian; Palma, John

2012-11-13

The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the enhanced control, performance trends of all FETs are still challenged by carrier mobility dependence on the strengths of the electrical field along the channel. However, in cases when the ratio of FinFET volume to its surface dramatically decreases, one should carefully consider the surface boundary conditions of the device. Moreover, the inherent non-planar nature of a FinFET demands 3D modeling for accurate analysis of the device performance. Using the Silvaco modeling tool with quantization effects, we modeled a physical FinFET described in the work of Hisamoto et al. (IEEE Tran. Elec. Devices 47:12, 2000) in 3D. We compared it with a 2D model of the same device. We demonstrated that 3D modeling produces more accurate results. As 3D modeling results came close to experimental measurements, we made the next step of the study by designing a dual-gate FinFET biased at Vg1 >Vg2. It is shown that the dual-gate FinFET carries higher transconductance than the single-gate device.

3D modeling of dual-gate FinFET

NASA Astrophysics Data System (ADS)

Mil'shtein, Samson; Devarakonda, Lalitha; Zanchi, Brian; Palma, John

2012-11-01

The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the enhanced control, performance trends of all FETs are still challenged by carrier mobility dependence on the strengths of the electrical field along the channel. However, in cases when the ratio of FinFET volume to its surface dramatically decreases, one should carefully consider the surface boundary conditions of the device. Moreover, the inherent non-planar nature of a FinFET demands 3D modeling for accurate analysis of the device performance. Using the Silvaco modeling tool with quantization effects, we modeled a physical FinFET described in the work of Hisamoto et al. (IEEE Tran. Elec. Devices 47:12, 2000) in 3D. We compared it with a 2D model of the same device. We demonstrated that 3D modeling produces more accurate results. As 3D modeling results came close to experimental measurements, we made the next step of the study by designing a dual-gate FinFET biased at V g1 > V g2. It is shown that the dual-gate FinFET carries higher transconductance than the single-gate device.

Effect of grain boundary on the field-effect mobility of microrod single crystal organic transistors.

PubMed

Kim, Jaekyun; Kang, Jingu; Cho, Sangho; Yoo, Byungwook; Kim, Yong-Hoon; Park, Sung Kyu

2014-11-01

High-performance microrod single crystal organic transistors based on a p-type 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) semiconductor are fabricated and the effects of grain boundaries on the carrier transport have been investigated. The spin-coating of C8-BTBT and subsequent solvent vapor annealing process enabled the formation of organic single crystals with high aspect ratio in the range of 10 - 20. It was found that the organic field-effect transistors (OFETs) based on these single crystals yield a field-effect mobility and an on/off current ratio of 8.04 cm2/Vs and > 10(5), respectively. However, single crystal OFETs with a kink, in which two single crystals are fused together, exhibited a noticeable drop of field-effect mobility, and we claim that this phenomenon results from the carrier scattering at the grain boundary.

Countercurrent distribution of biological cells

NASA Technical Reports Server (NTRS)

Brooks, D. E.

1979-01-01

A neutral polymer phase system consisting of 7.5 percent dextran 40/4.5 percent PEG 6, 0.11 M Na phosphate, 5 percent fetal bovine serum (FBS), pH 7.5, was developed which has a high phase droplet electrophoretic mobility and retains cell viability over many hours. In this and related systems, the drop mobility was a linear function of drop size, at least in the range 4-30 micron diameter. Applications of and electric field of 4.5 v/cm to a system containing 10 percent v/v bottom phase cleared the system more than two orders of magnitude faster than in the absence of the field. At higher bottom phase concentrations a secondary phenomenon intervened in the field driven separations which resulted in an increase in turbidity after clearing had commenced. The increase was associated with a dilution of the phase system in the chamber. The effect depended on the presence of the electric field. It may be due to electroosmotic flow of buffer through the Amicon membranes into the sample chamber and flow of phase system out into the rinse stream. Strategies to eliminate this problem are proposed.

Effects of ionic concentration gradient on electroosmotic flow mixing in a microchannel.

PubMed

Peng, Ran; Li, Dongqing

2015-02-15

Effects of ionic concentration gradient on electroosmotic flow (EOF) mixing of one stream of a high concentration electrolyte solution with a stream of a low concentration electrolyte solution in a microchannel are investigated numerically. The concentration field, flow field and electric field are strongly coupled via concentration dependent zeta potential, dielectric constant and electric conductivity. The results show that the electric field and the flow velocity are non-uniform when the concentration dependence of these parameters is taken into consideration. It is also found that when the ionic concentration of the electrolyte solution is higher than 1M, the electrolyte solution essentially cannot enter the channel due to the extremely low electroosmotic flow mobility. The effects of the concentration dependence of zeta potential, dielectric constant and electric conductivity on electroosmotic flow mixing are studied. Copyright © 2014 Elsevier Inc. All rights reserved.

Effect of exposure and withdrawal of 900-MHz-electromagnetic waves on brain, kidney and liver oxidative stress and some biochemical parameters in male rats.

PubMed

Ragy, Merhan Mamdouh

2015-01-01

Increasing use of mobile phones in daily life with increasing adverse effects of electromagnetic radiation (EMR), emitted from mobile on some physiological processes, cause many concerns about their effects on human health. Therefore, this work was designed to study the effects of exposure to mobile phone emits 900-MHz EMR on the brain, liver and kidney of male albino rats. Thirty male adult rats were randomly divided into four groups (10 each) as follows: control group (rats without exposure to EMR), exposure group (exposed to 900-MHz EMR for 1 h/d for 60 d) and withdrawal group (exposed to 900-MHz electromagnetic wave for 1 h/d for 60 d then left for 30 d without exposure). EMR emitted from mobile phone led to a significant increase in malondialdehyde (MDA) levels and significant decrease total antioxidant capacity (TAC) levels in brain, liver and kidneys tissues. The sera activity of alanine transaminase (ALT), aspartate aminotransferase (AST), urea, creatinine and corticosterone were significantly increased (p < 0.05), while serum catecholamines were insignificantly higher in the exposed rats. These alterations were corrected by withdrawal. In conclusion, electromagnetic field emitting from mobile phone might produce impairments in some biochemicals changes and oxidative stress in brain, liver and renal tissue of albino rats. These alterations were corrected by withdrawal.

Experimental study of uniaxial stress effects on Coulomb-limited mobility in p-type metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Kobayashi, Shigeki; Saitoh, Masumi; Nakabayashi, Yukio; Uchida, Ken

2007-11-01

Uniaxial stress effects on Coulomb-limited mobility (μCoulomb) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated experimentally. By using the four-point bending method, uniaxial stress corresponding to 0.1% strain is applied to MOSFETs along the channel direction. It is found that μCoulomb in p-type MOSFETs is enhanced greatly by uniaxial stress; μCoulomb is as sensitive as phonon-limited mobility. The high sensitivity of μCoulomb in p-type MOSFETs to stress arises from the stress-induced change of hole effective mass.

Highly effective field-effect mobility amorphous InGaZnO TFT mediated by directional silver nanowire arrays.

PubMed

Liu, Hung-Chuan; Lai, Yi-Chun; Lai, Chih-Chung; Wu, Bing-Shu; Zan, Hsiao-Wen; Yu, Peichen; Chueh, Yu-Lun; Tsai, Chuang-Chuang

2015-01-14

In this work, we demonstrate sputtered amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a record high effective field-effect mobility of 174 cm(2)/V s by incorporating silver nanowire (AgNW) arrays to channel electron transport. Compared to the reference counterpart without nanowires, the over 5-fold enhancement in the effective field-effect mobility exhibits clear dependence on the orientation as well as the surface coverage ratio of silver nanowires. Detailed material and device analyses reveal that during the room-temperature IGZO sputtering indium and oxygen diffuse into the nanowire matrix while the nanowire morphology and good contact between IGZO and nanowires are maintained. The unchanged morphology and good interfacial contact lead to high mobility and air-ambient-stable characteristics up to 3 months. Neither hysteresis nor degraded bias stress reliability is observed. The proposed AgNW-mediated a-IGZO TFTs are promising for development of large-scale, flexible, transparent electronics.

Electron-polar optical phonon scattering suppression and mobility enhancement in wurtzite heterostructures

NASA Astrophysics Data System (ADS)

Pokatilov, E. P.; Nika, D. L.; Zincenco, N. D.; Balandin, A. A.

2007-12-01

We have shown theoretically that the electron mobility in wurtzite AlN/GaN/AlN heterostructures can be enhanced by compensating the built-in electric field with the externally applied perpendicular electric field and by introducing a shallow InxGa1-xN channel in the center of GaN potential well. It was found that two- to fivefold increase of the room temperature electron mobility can be achieved. The tuning of the electron mobility with the external electric field or InxGa1-xN channel can be useful for the design of GaN-based field-effect transistors and optoelectronic devices.

High-mobility field-effect transistor based on crystalline ZnSnO3 thin films

NASA Astrophysics Data System (ADS)

Minato, Hiroya; Fujiwara, Kohei; Tsukazaki, Atsushi

2018-05-01

We propose crystalline ZnSnO3 as a new channel material for field-effect transistors. By molecular-beam epitaxy on LiNbO3(0001) substrates, we synthesized films of ZnSnO3, which crystallizes in the LiNbO3-type polar structure. Field-effect transistors on ZnSnO3 exhibit n-type operation with field-effect mobility of as high as 45 cm2V-1s-1 at room temperature. Systematic examination of the transistor operation for channels with different Zn/Sn compositional ratios revealed that the observed high-mobility reflects the nature of stoichiometric ZnSnO3 phase. Moreover, we found an indication of coupling of transistor characteristics with intrinsic spontaneous polarization in ZnSnO3, potentially leading to a distinct type of polarization-induced conduction.

Effect of In Situ Annealing Treatment on the Mobility and Morphology of TIPS-Pentacene-Based Organic Field-Effect Transistors.

PubMed

Yang, Fuqiang; Wang, Xiaolin; Fan, Huidong; Tang, Ying; Yang, Jianjun; Yu, Junsheng

2017-08-23

In this work, organic field-effect transistors (OFETs) with a bottom gate top contact structure were fabricated by using a spray-coating method, and the influence of in situ annealing treatment on the OFET performance was investigated. Compared to the conventional post-annealing method, the field-effect mobility of OFET with 60 °C in situ annealing treatment was enhanced nearly four times from 0.056 to 0.191 cm 2 /Vs. The surface morphologies and the crystallization of TIPS-pentacene films were characterized by optical microscope, atomic force microscope, and X-ray diffraction. We found that the increased mobility was mainly attributed to the improved crystallization and highly ordered TIPS-pentacene molecules.

Effect of In Situ Annealing Treatment on the Mobility and Morphology of TIPS-Pentacene-Based Organic Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Yang, Fuqiang; Wang, Xiaolin; Fan, Huidong; Tang, Ying; Yang, Jianjun; Yu, Junsheng

2017-08-01

In this work, organic field-effect transistors (OFETs) with a bottom gate top contact structure were fabricated by using a spray-coating method, and the influence of in situ annealing treatment on the OFET performance was investigated. Compared to the conventional post-annealing method, the field-effect mobility of OFET with 60 °C in situ annealing treatment was enhanced nearly four times from 0.056 to 0.191 cm2/Vs. The surface morphologies and the crystallization of TIPS-pentacene films were characterized by optical microscope, atomic force microscope, and X-ray diffraction. We found that the increased mobility was mainly attributed to the improved crystallization and highly ordered TIPS-pentacene molecules.

High quality crystalline pentacene and rubrene FETs

NASA Astrophysics Data System (ADS)

Butko, Vladimir

2005-03-01

Molecular organic materials offer the promise of novel electronic devices but also present challenges for understanding charge transport in narrow band systems. We find that one of the most important intermolecular transport FET parameters, the effective channel mobility, is parameterized by two factors: (1) the degree of carrier trapping in localized DOS band-tail states, which are higher in concentration for FET structures than for bulk crystal, and (2) the free-carrier mobility, μ0. Our analysis shows crystalline devices possess μ0˜70 cm^2/Vs, significantly greater than polycrystalline thin film devices where free-carrier mobility μ0˜1 cm^2/Vs. Low temperature studies elucidate fundamental transport processes. We report the lowest temperature field effect transport results on a crystalline oligomeric organic material, rubrene. Gated transport shows a factor of ˜10 suppression of the thermal activation energy in 10-50 K range and nearly temperature independent resistivity below 10 K. Other examples of 2 dimensional charge carrier transport will also be discussed.

Biological responses of mobile phone frequency exposure.

PubMed

Behari, Jitendra

2010-10-01

Existence of low level electromagnetic fields in the environment has been known since antiquity and their biological implications are noted for several decades. As such dosimetry of such field parameters and their emissions from various sources of mass utilization has been a subject of constant concern. Recent advancement in mobile communications has also drawn attention to their biological effects. Hand held children and adults alike generally use mobile sources as cordless phones in various positions with respect to the body. Further, an increasing number of mobile communication base stations have led to wide ranging concern about possible health effects of radiofrequency emissions. There are two distinct possibilities by which health could be affected as a result of radio frequency field exposure. These are thermal effects caused by holding mobile phones close to the body and extended conversations over a long period of time. Secondly, there could be possibly non thermal effects from both phones and base stations whereby the affects could also be cumulative. Some people may be adversely affected by the environmental impact of mobile phone base stations situated near their homes, schools or any other place. In addition to mobile phones, appliances like microwave oven etc are also in increasing use. Apart from the controversy over the possible health effects due to the non-thermal effect of electromagnetic fields the electromagnetic interaction of portable radio waves with human head needs to be quantitatively evaluated. Relating to this is the criteria of safe exposure to the population at large. While a lot of efforts have gone into resolving the issue, a clear picture has yet to emerge. Recent advances and the problems relating to the safety criteria are discussed.

Characterization of applied fields for ion mobility separations in traveling wave based structures for lossless ion manipulations (SLIM)

DOE PAGES

Hamid, Ahmed M.; Prabhakaran, Aneesh; Garimella, Sandilya V. B.; ...

2018-03-26

Ion mobility (IM) is rapidly gaining attention for the separation and analysis of biomolecules due to the ability to distinguish the shapes of ions. However, conventional constant electric field drift tube IM separations have limited resolving power, constrained by practical limitations on the path length and maximum applied voltage. The implementation of traveling waves (TW) in IM removes the latter limitation, allowing higher resolution to be achieved using extended path lengths. Both of these can be readily obtained in Structures for Lossless Ion Manipulations (SLIM), which are fabricated from arrays of electrodes patterned on two parallel surfaces where potentials aremore » applied to generate appropriate electric fields between the surfaces. Here we have investigated the relationship between the primary SLIM variables, such as electrode dimensions, inter-surface gap, and the applied TW voltages, that directly impact the fields experienced by ions. Ion trajectory simulations and theoretical calculations have been utilized to understand the dependence of SLIM geometry and effective electric fields on IM resolution. The variables explored impact both ion confinement and the observed IM resolution using SLIM modules.« less

Drift of charge carriers in crystalline organic semiconductors

NASA Astrophysics Data System (ADS)

Dong, Jingjuan; Si, Wei; Wu, Chang-Qin

2016-04-01

We investigate the direct-current response of crystalline organic semiconductors in the presence of finite external electric fields by the quantum-classical Ehrenfest dynamics complemented with instantaneous decoherence corrections (IDC). The IDC is carried out in the real-space representation with the energy-dependent reweighing factors to account for both intermolecular decoherence and energy relaxation by which conduction occurs. In this way, both the diffusion and drift motion of charge carriers are described in a unified framework. Based on an off-diagonal electron-phonon coupling model for pentacene, we find that the drift velocity initially increases with the electric field and then decreases at higher fields due to the Wannier-Stark localization, and a negative electric-field dependence of mobility is observed. The Einstein relation, which is a manifestation of the fluctuation-dissipation theorem, is found to be restored in electric fields up to ˜105 V/cm for a wide temperature region studied. Furthermore, we show that the incorporated decoherence and energy relaxation could explain the large discrepancy between the mobilities calculated by the Ehrenfest dynamics and the full quantum methods, which proves the effectiveness of our approach to take back these missing processes.

Drift of charge carriers in crystalline organic semiconductors.

PubMed

Dong, Jingjuan; Si, Wei; Wu, Chang-Qin

2016-04-14

We investigate the direct-current response of crystalline organic semiconductors in the presence of finite external electric fields by the quantum-classical Ehrenfest dynamics complemented with instantaneous decoherence corrections (IDC). The IDC is carried out in the real-space representation with the energy-dependent reweighing factors to account for both intermolecular decoherence and energy relaxation by which conduction occurs. In this way, both the diffusion and drift motion of charge carriers are described in a unified framework. Based on an off-diagonal electron-phonon coupling model for pentacene, we find that the drift velocity initially increases with the electric field and then decreases at higher fields due to the Wannier-Stark localization, and a negative electric-field dependence of mobility is observed. The Einstein relation, which is a manifestation of the fluctuation-dissipation theorem, is found to be restored in electric fields up to ∼10(5) V/cm for a wide temperature region studied. Furthermore, we show that the incorporated decoherence and energy relaxation could explain the large discrepancy between the mobilities calculated by the Ehrenfest dynamics and the full quantum methods, which proves the effectiveness of our approach to take back these missing processes.

Characterization of applied fields for ion mobility separations in traveling wave based structures for lossless ion manipulations (SLIM)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hamid, Ahmed M.; Prabhakaran, Aneesh; Garimella, Sandilya V. B.

Ion mobility (IM) is rapidly gaining attention for the separation and analysis of biomolecules due to the ability to distinguish the shapes of ions. However, conventional constant electric field drift tube IM separations have limited resolving power, constrained by practical limitations on the path length and maximum applied voltage. The implementation of traveling waves (TW) in IM removes the latter limitation, allowing higher resolution to be achieved using extended path lengths. Both of these can be readily obtained in Structures for Lossless Ion Manipulations (SLIM), which are fabricated from arrays of electrodes patterned on two parallel surfaces where potentials aremore » applied to generate appropriate electric fields between the surfaces. Here we have investigated the relationship between the primary SLIM variables, such as electrode dimensions, inter-surface gap, and the applied TW voltages, that directly impact the fields experienced by ions. Ion trajectory simulations and theoretical calculations have been utilized to understand the dependence of SLIM geometry and effective electric fields on IM resolution. The variables explored impact both ion confinement and the observed IM resolution using SLIM modules.« less

Correlation between microstructure and charge transport in poly(2,5-dimethoxy- p -phenylenevinylene) thin films

NASA Astrophysics Data System (ADS)

Sims, M.; Tuladhar, S. M.; Nelson, J.; Maher, R. C.; Campoy-Quiles, M.; Choulis, S. A.; Mairy, M.; Bradley, D. D. C.; Etchegoin, P. G.; Tregidgo, C.; Suhling, K.; Richards, D. R.; Massiot, P.; Nielsen, C. B.; Steinke, J. H. G.

2007-11-01

We report a study of thin films of poly(2,5-dimethoxy- p -phenylenevinylene) (PDMeOPV) prepared by a precursor route. Conversion at two different temperatures, namely, 120 and 185°C , produces partially and fully converted films. We study the structural, optical, and charge transport characteristics of these samples in order to relate transport properties to microstructure. Micro-Raman mapping and photoluminescence (PL) imaging reveal the existence of coarse, depth-averaged domains of around 50μm in lateral extent, with more pronounced contrast for conversion at the higher temperature. The contrast in both micro-Raman and PL maps can be attributed to fluctuations in film density. Spectroscopic ellipsometry studies of the films indicate that the average film density is approximately 15% higher for conversion at the higher temperature. Time-of-flight photocurrent transients, recorded here in PDMeOPV films, are typically dispersive but yield hole mobilities in excess of 10-4cm2/Vs at modest applied fields (˜1.2×105V/cm) in the fully converted films. To our knowledge, these are amongst the highest reported mobility values for a poly( p -phenylenevinylene) derivative. Fully converted films, while yielding higher hole mobilities, exhibit a stronger dependence on electric field than partially converted ones. The higher mobility can be attributed to the almost complete conversion of the flexible saturated subunits within precursor chains to conjugated vinylene moieties at elevated temperature. This results in a correspondingly higher packing density, an improvement in intrachain transport, and a reduction in the smallest interchain hopping distance. We suggest that the stronger electric field dependence is due to the increasing influence of intermolecular electrostatic interactions with decreasing interchain separation. We propose that a greater proportion of chains in the fully converted films packs in a three-dimensional, interdigitated arrangement similar to that described previously for crystalline samples of PDMeOPV [J. H. F. Martens , Synth. Met. 55, 449 (1993)].

Intrinsic Electron Mobility Exceeding 10³ cm²/(V s) in Multilayer InSe FETs.

PubMed

Sucharitakul, Sukrit; Goble, Nicholas J; Kumar, U Rajesh; Sankar, Raman; Bogorad, Zachary A; Chou, Fang-Cheng; Chen, Yit-Tsong; Gao, Xuan P A

2015-06-10

Graphene-like two-dimensional (2D) materials not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also hold promises for device miniaturization down to atomic thickness. As one material belonging to this category, InSe, a III-VI semiconductor, not only is a promising candidate for optoelectronic devices but also has potential for ultrathin field effect transistor (FET) with high mobility transport. In this work, various substrates such as PMMA, bare silicon oxide, passivated silicon oxide, and silicon nitride were used to fabricate multilayer InSe FET devices. Through back gating and Hall measurement in four-probe configuration, the device's field effect mobility and intrinsic Hall mobility were extracted at various temperatures to study the material's intrinsic transport behavior and the effect of dielectric substrate. The sample's field effect and Hall mobilities over the range of 20-300 K fall in the range of 0.1-2.0 × 10(3) cm(2)/(V s), which are comparable or better than the state of the art FETs made of widely studied 2D transition metal dichalcogenides.

Mobility enhancement in graphene transistors on low temperature pulsed laser deposited boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Uddin, Md Ahsan, E-mail: uddin2@email.sc.edu, E-mail: gkoley@clemson.edu; Koley, Goutam, E-mail: uddin2@email.sc.edu, E-mail: gkoley@clemson.edu; Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208

2015-11-16

Low temperature pulsed laser deposited (PLD) ultrathin boron nitride (BN) on SiO{sub 2} was investigated as a dielectric for graphene electronics, and a significant enhancement in electrical transport properties of graphene/PLD BN compared to graphene/SiO{sub 2} has been observed. Graphene synthesized by chemical vapor deposition and transferred on PLD deposited and annealed BN exhibited up to three times higher field effect mobility compared to graphene on the SiO{sub 2} substrate. Graphene field effect transistor devices fabricated on 5 nm BN/SiO{sub 2} (300 nm) yielded maximum hole and electron mobility of 4980 and 4200 cm{sup 2}/V s, respectively. In addition, significant improvement in carriermore » homogeneity and reduction in extrinsic doping in graphene on BN has been observed. An average Dirac point of 3.5 V and residual carrier concentration of 7.65 × 10{sup 11 }cm{sup −2} was observed for graphene transferred on 5 nm BN at ambient condition. The overall performance improvement on PLD BN can be attributed to dielectric screening of charged impurities, similar crystal structure and phonon modes, and reduced substrate induced doping.« less

Tuning on-off current ratio and field-effect mobility in a MoS(2)-graphene heterostructure via Schottky barrier modulation.

PubMed

Shih, Chih-Jen; Wang, Qing Hua; Son, Youngwoo; Jin, Zhong; Blankschtein, Daniel; Strano, Michael S

2014-06-24

Field-effect transistor (FET) devices composed of a MoS2-graphene heterostructure can combine the advantages of high carrier mobility in graphene with the permanent band gap of MoS2 for digital applications. Herein, we investigate the electron transfer, photoluminescence, and gate-controlled carrier transport in such a heterostructure. We show that the junction is a Schottky barrier, whose height can be artificially controlled by gating or doping graphene. When the applied gate voltage (or the doping level) is zero, the photoexcited electron-hole pairs in monolayer MoS2 can be split by the heterojunction, significantly reducing the photoluminescence. By applying negative gate voltage (or p-doping) in graphene, the interlayer impedance formed between MoS2 and graphene exhibits an 100-fold increase. For the first time, we show that the gate-controlled interlayer Schottky impedance can be utilized to modulate carrier transport in graphene, significantly depleting the hole transport, but preserving the electron transport. Accordingly, we demonstrate a new type of FET device, which enables a controllable transition from NMOS digital to bipolar characteristics. In the NMOS digital regime, we report a very high room temperature on/off current ratio (ION/IOFF ∼ 36) in comparison to graphene-based FET devices without sacrificing the field-effect electron mobilities in graphene. By engineering the source/drain contact area, we further estimate that a higher value of ION/IOFF up to 100 can be obtained in the device architecture considered. The device architecture presented here may enable semiconducting behavior in graphene for digital and analogue electronics.

Electrical characteristics of organic perylene single-crystal-based field-effect transistors

NASA Astrophysics Data System (ADS)

Lee, Jin-Woo; Kang, Han-Saem; Kim, Min-Ki; Kim, Kihyun; Cho, Mi-Yeon; Kwon, Young-Wan; Joo, Jinsoo; Kim, Jae-Il; Hong, Chang-Seop

2007-12-01

We report on the fabrication of organic field-effect transistors (OFETs) using perylene single crystal as the active material and their electrical characteristics. Perylene single crystals were directly grown from perylene powder in a furnace using a relatively short growth time of 1-3 h. The crystalline structure of the perylene single crystals was characterized by means of a single-crystal x-ray diffractometer. In order to place the perylene single crystal onto the Au electrodes of the field-effect transistor, a polymethlymethacrylate thin layer was spin-coated on top of the crystal surface. The OFETs fabricated using the perylene single crystal showed a typical p-type operating mode. The field-effect mobility of the perylene crystal based OFETs was measured to be ˜9.62×10-4 cm2/V s at room temperature. The anisotropy of the mobility implying the existence of different mobilities when applying currents in different directions was observed for the OFETs, and the existence of traps in the perylene crystal was found through the measurements of the temperature-dependent mobility at various operating drain voltages.

Quantum oscillations and interference effects in strained n- and p-type modulation doped GaInNAs/GaAs quantum wells

NASA Astrophysics Data System (ADS)

Sarcan, F.; Nutku, F.; Donmez, O.; Kuruoglu, F.; Mutlu, S.; Erol, A.; Yildirim, S.; Arikan, M. C.

2015-08-01

We have performed magnetoresistance measurements on n- and p-type modulation doped GaInNAs/GaAs quantum well (QW) structures in both the weak (B  < 0.08 T) and the high magnetic field (up to 18 T) at 75 mK and 6 K. We observe that the quantum oscillations in {ρxx} and quantum Hall effect (QHE) plateaus in {ρxy} are affected from the presence of the nitrogen in the III-V lattice. The enhancement of N-related scatterings and electron effective mass with increasing nitrogen causes lower electron mobility and higher two-dimensional (2D) electron density, leading to suppressed QHE plateaus in {ρxy} up to 7 T at 6 K. The Shubnikov de Haas (SdH) oscillations develop at lower magnetic fields for higher mobility samples at 6 K and the amplitude of SdH oscillations decreases with increasing nitrogen composition. The well-pronounced QHE plateaus are observed at 75 mK and at higher magnetic fields up to 18 T, for the p-type sample. For n-type samples, the observed anomalies in the characteristic of QHE is attributed the nitrogen-related disorders and overlapping of fluctuating Landau levels. The low magnetic field measurements at 75 mK reveal that the n-type samples exhibit weak antilocalization, whereas weak localization is observed for the p-type sample. The observation of weak antilocalization is an indication of strong electron spin-orbit interactions. The low field magnetoresistance traces are used to extract the spin coherence, phase coherence and elastic scattering times as well Rashba parameters and spin-splitting energy. The calculated Rashba parameters for nitrogen containing samples reveal that the nitrogen composition is a significant parameter to determine the degree of the spin-orbit interactions. Consequently, GaInNAs-based QW structures with various nitrogen compositions can be beneficial to adjust the spin-orbit coupling strength and may be used as a candidate for spintronics applications.

Operation of the GaSb p-channel metal-oxide-semiconductor field-effect transistors fabricated on (111)A surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nishi, K., E-mail: nishi@mosfet.t.u-tokyo.ac.jp; Takenaka, M.; Takagi, S.

2014-12-08

We demonstrate the operation of GaSb p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on (111)A surfaces with Al{sub 2}O{sub 3} gate dielectrics formed by atomic-layer deposition at 150 °C. The p-MOSFETs on (111)A surfaces exhibit higher drain current and lower subthreshold swing than those on (100) surfaces. We find that the interface-state density (D{sub it}) values at the Al{sub 2}O{sub 3}/GaSb MOS interfaces on the (111)A surfaces are lower than those on the (100) surfaces, which can lead to performance enhancement of the GaSb p-MOSFETs on (111)A surfaces. The mobility of the GaSb p-MOSFETs on (111)A surfaces is 80% higher than that onmore » (100) surfaces.« less

Black holes as antimatter factories

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bambi, Cosimo; Petrov, Alexey A.; Dolgov, Alexander D., E-mail: cosimo.bambi@ipmu.jp, E-mail: dolgov@fe.infn.it, E-mail: apetrov@physics.wayne.edu

2009-09-01

We consider accretion of matter onto a low mass black hole surrounded by ionized medium. We show that, because of the higher mobility of protons than electrons, the black hole would acquire positive electric charge. If the black hole's mass is about or below 10{sup 20} g, the electric field at the horizon can reach the critical value which leads to vacuum instability and electron-positron pair production by the Schwinger mechanism. Since the positrons are ejected by the emergent electric field, while electrons are back-captured, the black hole operates as an antimatter factory which effectively converts protons into positrons.

Dependence of Mobility on Density of Gap States in Organics by GAMEaS - Gate Modulated Activation Energy Spectroscopy

NASA Astrophysics Data System (ADS)

So, Woo-Young; Lang, David; Ramirez, Arthur

2008-03-01

We develop a spectroscopic method for determining the density of states (DOS) in the energy gap - GAte Modulated activation Energy Spectroscopy (GAMEaS), We also report the relationship of these gap states to the mobility of organic field-effect-transistors (FETs). We find that the field-effect mobility is parameterized by two factors: (1) the free-carrier mobility and (2) the ratio of the free carrier density to the total carrier density induced by the gate bias. We show that the highest mobility FETs have shallow exponential band tails of localized states with characteristic slope of 1/kT at 300K. Most remarkably, state-of-the-art crystalline FETs fabricated from rubrene, pentacene, and tetracene all have a very high free-carrier mobility, up to 200cm2/Vsec at 300K, with the somewhat lower effective mobilities dominated by localized gap states. This strongly suggests that further improvements in device performance could be possible with enhanced material quality.

Atomically engineered epitaxial anatase TiO2 metal-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Kim, Brian S. Y.; Minohara, Makoto; Hikita, Yasuyuki; Bell, Christopher; Hwang, Harold Y.

2018-03-01

Anatase TiO2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO2 and LaAlO3 (001), which arises for LaO-terminated LaAlO3, while the AlO2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a high field-effect mobility μ FE of 3.14 cm2 (V s)-1 approaching 98% of the corresponding Hall mobility μ Hall . Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ˜4 V.

Indium antimonide quantum well structures for electronic device applications

NASA Astrophysics Data System (ADS)

Edirisooriya, Madhavie

The electron effective mass is smaller in InSb than in any other III-V semiconductor. Since the electron mobility depends inversely on the effective mass, InSb-based devices are attractive for field effect transistors, magnetic field sensors, ballistic transport devices, and other applications where the performance depends on a high mobility or a long mean free path. In addition, electrons in InSb have a large g-factor and strong spin orbit coupling, which makes them well suited for certain spin transport devices. The first n-channel InSb high electron mobility transistor (HEMT) was produced in 2005 with a power-delay product superior to HEMTs with a channel made from any other III-V semiconductor. The high electron mobility in the InSb quantum-well channel increases the switching speed and lowers the required supply voltage. This dissertation focuses on several materials challenges that can further increase the appeal of InSb quantum wells for transistors and other electronic device applications. First, the electron mobility in InSb quantum wells, which is the highest for any semiconductor quantum well, can be further increased by reducing scattering by crystal defects. InSb-based heteroepitaxy is usually performed on semi-insulating GaAs (001) substrates due to the lack of a lattice matched semi-insulating substrate. The 14.6% mismatch between the lattice parameters of GaAs and InSb results in the formation of structural defects such as threading dislocations and microtwins which degrade the electrical and optical properties of InSb-based devices. Chapter 1 reviews the methods and procedures for growing InSb-based heterostructures by molecular beam epitaxy. Chapters 2 and 3 introduce techniques for minimizing the crystalline defects in InSb-based structures grown on GaAs substrates. Chapter 2 discusses a method of reducing threading dislocations by incorporating AlyIn1-ySb interlayers in an AlxIn1-xSb buffer layer and the reduction of microtwin defects by growth on GaAs substrates that are oriented 2° away from the [011] direction. Chapter 3 discusses designing InSb QW layer structures that are strain balanced. By applying these defect-reducing techniques, the electron mobility in InSb quantum wells at room temperature was significantly increased. For complementary logic technology, p-channel transistors with high mobility are equally as important as n-channel transistors. However, achieving a high hole mobility in III-V semiconductors is challenging. A controlled introduction of strain in the quantum-well material is an effective technique for enhancing the hole mobility beyond its value in bulk material. The strain reduces the hole effective mass by splitting the heavy hole and light hole valence bands. Chapter 4 discusses a successful attempt to realize p-type InSb quantum well structures. The biaxial strain applied via a relaxed metamorphic buffer resulted in a significantly higher room-temperature hole mobility and a record high low-temperature hole mobility. To demonstrate the usefulness of high mobility in a device structure, magnetoresistive devices were fabricated from remotely doped InSb QWs. Such devices have numerous practical applications such as position and speed sensors and as read heads in magnetic storage systems. In a magnetoresistive device composed of a series of shorted Hall bars, the magnetoresistance is proportional to the electron mobility squared for small magnetic fields. Hence, the high electron mobility in InSb QWs makes them highly preferable for geometrical magnetoresistors. Chapter 5 reports the fabrication and characterization of InSb quantum-well magnetoresistors. The excellent transport properties of the InSb QWs resulted in high room-temperature sensitivity to applied magnetic fields. Finally, Chapter 6 provides the conclusions obtained during this research effort, and makes suggestions for future work.

Are mobile phones harmful?

PubMed

Blettner, M; Berg, G

2000-01-01

There is increasing public interest in health risks of mobile phone use. Although there is a vast body of material on the biological effects of radiofrequency fields, current risk assessment is still limited. The article describes several hypotheses and results of biological effects such as thermal effect, genetic and carcinogenic effects and cancer related investigations. Mobile phones transmit and receive waves of frequencies mainly at 800-1800 MHz. Findings on the thermal effect of acute exposure to radiofrequency fields were consistent, resulting in an increase of cellular, tissue or body temperature by 1 degree C or more. Guidelines for risk limits are based on this thermal effect. Experimental investigation suggests that radiofrequency fields are not tumor initiators and that if they are related to carcinogenicity, this would be by tumor promotion or by increasing the uptake of carcinogens in cells. Implications of these experimental results on public health concerns are yet unclear. Few epidemiological studies are available on the use of mobile phones or on the radiofrequency exposure and the development of cancer. Most of these studies have no or little quantitative exposure data and they are limited by the small number of observations. Large epidemiological studies are necessary in order to investigate the use of mobile phones on the development of cancer. It should be emphasized that even a small elevated risk may have a large implication for public health, as the use of mobile phones and the exposure is rapidly increasing.

Transparent Oxide TFTs Fabricated by Atomic Layer Deposition

DTIC Science & Technology

2014-04-17

Transparent Oxide TFTs Fabricated by Atomic Layer Deposition(FA2386-11-1-114052) Yukiharu Uraoka, Nara Institute of Science and Technology Term...2011.5.1-2012.4.30 Purpose and Background: In recent years, the application of zinc oxide (ZnO) thin films as an active channel layer in TFTs has...or other flexible substrates. Higher field-effect mobility of ZnO TFTs than a-Si:H TFTs has been recently demonstrated. However, reliability for

25th anniversary article: key points for high-mobility organic field-effect transistors.

PubMed

Dong, Huanli; Fu, Xiaolong; Liu, Jie; Wang, Zongrui; Hu, Wenping

2013-11-20

Remarkable progress has been made in developing high performance organic field-effect transistors (OFETs) and the mobility of OFETs has been approaching the values of polycrystalline silicon, meeting the requirements of various electronic applications from electronic papers to integrated circuits. In this review, the key points for development of high mobility OFETs are highlighted from aspects of molecular engineering, process engineering and interface engineering. The importance of other factors, such as impurities and testing conditions is also addressed. Finally, the current challenges in this field for practical applications of OFETs are further discussed. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Identifying Core Mobile Learning Faculty Competencies Based Integrated Approach: A Delphi Study

ERIC Educational Resources Information Center

Elbarbary, Rafik Said

2015-01-01

This study is based on the integrated approach as a concept framework to identify, categorize, and rank a key component of mobile learning core competencies for Egyptian faculty members in higher education. The field investigation framework used four rounds Delphi technique to determine the importance rate of each component of core competencies…

Study Regarding Electromagnetic Radiation Exposure Generated By Mobile Phone

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marica, Lucia; Moraru, Luminita

Number of mobile phone users reached to 5 billion subscribers in 2010 [ABI Research, 2010]. A large number of studies illustrated the public concern about adverse effects of mobile phone radiation and possible health hazards. Position of mobile phone use in close proximity to the head leads the main radiation between the hand and the head. Many investigations studying the possible effects of mobile phone exposure, founded no measurable effects of short-term mobile phone radiation, and there was no evidence for the ability to perceive mobile phone EMF in the general population. In this study, field radiation measurements were performedmore » on different brand and different models of mobile phones in active mode, using an EMF RF Radiation Field Strength Power Meter 1 MHz-8 GHz. The study was effectuated on both the 2G and 3G generations phones connected to the providers operating in the frequency range 450 MHz-1800 MHz. There were recorded values in outgoing call and SMS mode, incoming call and SMS mode. Results were compared with ICNIRP guidelines for exposure to general public.« less

Study Regarding Electromagnetic Radiation Exposure Generated By Mobile Phone

NASA Astrophysics Data System (ADS)

Marica, Lucia; Moraru, Luminita

2011-12-01

Number of mobile phone users reached to 5 billion subscribers in 2010 [ABI Research, 2010]. A large number of studies illustrated the public concern about adverse effects of mobile phone radiation and possible health hazards. Position of mobile phone use in close proximity to the head leads the main radiation between the hand and the head. Many investigations studying the possible effects of mobile phone exposure, founded no measurable effects of short-term mobile phone radiation, and there was no evidence for the ability to perceive mobile phone EMF in the general population. In this study, field radiation measurements were performed on different brand and different models of mobile phones in active mode, using an EMF RF Radiation Field Strength Power Meter 1 MHz-8 GHz. The study was effectuated on both the 2G and 3G generations phones connected to the providers operating in the frequency range 450 MHz-1800 MHz. There were recorded values in outgoing call and SMS mode, incoming call and SMS mode. Results were compared with ICNIRP guidelines for exposure to general public.

Survey of the Effects of Exposure to 900 MHz Radiofrequency Radiation Emitted by a GSM Mobile Phone on the Pattern of Muscle Contractions in an Animal Model.

PubMed

Mortazavi, S M J; Rahimi, S; Talebi, A; Soleimani, A; Rafati, A

2015-09-01

The rapid development of wireless telecommunication technologies over the past decades, has led to significant changes in the exposure of the general public to electromagnetic fields. Nowadays, people are continuously exposed to different sources of electromagnetic fields such as mobile phones, mobile base stations, cordless phones, Wi-Fi routers, and power lines. Therefore, the last decade witnessed a rapidly growing concern about the possible health effects of exposure to electromagnetic fields emitted by these sources. In this study that was aimed at investigating the effects of exposure to radiofrequency (RF) radiation emitted by a GSM mobile phone on the pattern of contraction in frog's isolated gastrocnemius muscle after stimulation with single square pulses of 1V (1 Hz), pulse height of contractions, the time interval between two subsequent contractions and the latency period were measured. Our findings showed that the pulse height of contractions muscle could be affected by the exposure to electromagnetic fields. Especially, the latency period was effectively altered in RF-exposed samples. However, none of the experiments could show an alteration in the time interval between two subsequent contractions after exposure to electromagnetic fields. These findings support early reports which indicated a wide variety of non-thermal effects of electromagnetic radiation on amphibians including the effects on the pattern of muscle extractions.

Low temperature fabrication of CuxO thin-film transistors and investigation on the origin of low field effect mobility

NASA Astrophysics Data System (ADS)

Shijeesh, M. R.; Jayaraj, M. K.

2018-04-01

Cuprous (Cu2O) and cupric (CuO) oxide thin films have been deposited by radio frequency magnetron sputtering with two different oxygen partial pressures. The as-deposited copper oxide films were subjected to post-annealing at 300 °C for 30 min to improve the microstructural, morphological, and optical properties of thin films. Optical absorption studies revealed the existence of a large number of subgap states inside CuO films than Cu2O films. Cu2O and CuO thin film transistors (TFTs) were fabricated in an inverted staggered structure by using a post-annealed channel layer. The field effect mobility values of Cu2O and CuO TFTs were 5.20 × 10-4 cm2 V-1 s-1 and 2.33 × 10-4 cm2 V-1 s-1, respectively. The poor values of subthreshold swing, threshold voltage, and field effect mobility of the TFTs were due to the charge trap density at the copper oxide/dielectric interface as well as defect induced trap states originated from the oxygen vacancies inside the bulk copper oxide. In order to study the distribution of the trap states in the Cu2O and CuO active layer, the temperature dependent transfer characteristics of transistors in the temperature range between 310 K and 340 K were studied. The observed subgap states were found to be decreasing exponentially inside the bandgap, with CuO TFT showing higher subgap states than Cu2O TFT. The high-density hole trap states in the CuO channel are one of the plausible reasons for the lower mobility in CuO TFT than in Cu2O TFT. The origin of these subgap states was attributed to the impurities or oxygen vacancies present in the CuO channel layer.

Assistive peripheral phosphene arrays deliver advantages in obstacle avoidance in simulated end-stage retinitis pigmentosa: a virtual-reality study

NASA Astrophysics Data System (ADS)

Zapf, Marc Patrick H.; Boon, Mei-Ying; Lovell, Nigel H.; Suaning, Gregg J.

2016-04-01

Objective. The prospective efficacy of peripheral retinal prostheses for guiding orientation and mobility in the absence of residual vision, as compared to an implant for the central visual field (VF), was evaluated using simulated prosthetic vision (SPV). Approach. Sighted volunteers wearing a head-mounted display performed an obstacle circumvention task under SPV. Mobility and orientation performance with three layouts of prosthetic vision were compared: peripheral prosthetic vision of higher visual acuity (VA) but limited VF, of wider VF but limited VA, as well as centrally restricted prosthetic vision. Learning curves using these layouts were compared fitting an exponential model to the mobility and orientation measures. Main results. Using peripheral layouts, performance was superior to the central layout. Walking speed with both higher-acuity and wider-angle layouts was 5.6% higher, and mobility errors reduced by 46.4% and 48.6%, respectively, as compared to the central layout. The wider-angle layout yielded the least number of collisions, 63% less than the higher-acuity and 73% less than the central layout. Using peripheral layouts, the number of visual-scanning related head movements was 54.3% (higher-acuity) and 60.7% (wider-angle) lower, as compared to the central layout, and the ratio of time standing versus time walking was 51.9% and 61.5% lower, respectively. Learning curves did not differ between layouts, except for time standing versus time walking, where both peripheral layouts achieved significantly lower asymptotic values compared to the central layout. Significance. Beyond complementing residual vision for an improved performance, peripheral prosthetic vision can effectively guide mobility in the later stages of retinitis pigmentosa (RP) without residual vision. Further, the temporal dynamics of learning peripheral and central prosthetic vision are similar. Therefore, development of a peripheral retinal prosthesis and early implantation to alleviate VF constriction in RP should be considered to extend the target group and the time of benefit for potential retinal prosthesis implantees.

Improved Differential Ion Mobility Separations Using Linked Scans of Carrier Gas Composition and Compensation Field

NASA Astrophysics Data System (ADS)

Santiago, Brandon G.; Harris, Rachel A.; Isenberg, Samantha L.; Ridgeway, Mark E.; Pilo, Alice L.; Kaplan, Desmond A.; Glish, Gary L.

2015-07-01

Differential ion mobility spectrometry (DIMS) separates ions based on differences in their mobilities in low and high electric fields. When coupled to mass spectrometric analyses, DIMS has the ability to improve signal-to-background by eliminating isobaric and isomeric compounds for analytes in complex mixtures. DIMS separation power, often measured by resolution and peak capacity, can be improved through increasing the fraction of helium in the nitrogen carrier gas. However, because the mobility of ions is higher in helium, a greater number of ions collide with the DIMS electrodes or housing, yielding losses in signal intensity. To take advantage of the benefits of helium addition on DIMS separations and reduce ion losses, linked scans were developed. In a linked scan the helium content of the carrier gas is reduced as the compensation field is increased. Linked scans were compared with conventional compensation field scans with constant helium content for the protein ubiquitin and a tryptic digest of bovine serum albumin (BSA). Linked scans yield better separation of ubiquitin charge states and enhanced peak capacities for the analysis of BSA compared with compensation field scans with constant helium carrier gas percentages. Linked scans also offer improved signal intensity retention in comparison to compensation field scans with constant helium percentages in the carrier gas.

Mobile phones and sleep - A review

NASA Astrophysics Data System (ADS)

Supe, Sanjay S.

2010-01-01

The increasing use of mobile phones has raised concerns regarding the potential health effects of exposure to the radiofrequency electromagnetic fields. An increasing amount research related to mobile phone use has focussed on the possible effects of mobile phone exposure on human brain activity and function. In particular, the use of sleep research has become a more widely used technique for assessing the possible effects of mobile phones on human health and wellbeing especially in the investigation of potential changes in sleep architecture resulting from mobile phone use. Acute exposure to a mobile phone prior to sleep significantly enhances electroencephalogram spectral power in the sleep spindle frequency range. This mobile phone-induced enhancement in spectral power is largely transitory and does not linger throughout the night. Furthermore, a reduction in rapid eye movement sleep latency following mobile phone exposure was also found, although interestingly, neither this change in rapid eye movement sleep latency or the enhancement in spectral power following mobile phone exposure, led to changes in the overall quality of sleep. In conclusion, a short exposure to the radiofrequency electromagnetic fields emitted by a mobile phone handset immediately prior to sleep is sufficient to induce changes in brain activity in the initial part of sleep. The consequences or functional significance of this effect are currently unknown and it would be premature to draw conclusions about possible health consequences.

Characterization of the transport properties of channel delta-doped structures by light-modulated Shubnikov-de Haas measurements

NASA Technical Reports Server (NTRS)

Mena, R. A.; Schacham, S. E.; Haugland, E. J.; Alterovitz, S. A.; Young, P. G.; Bibyk, S. B.; Ringel, S. A.

1995-01-01

The transport properties of channel delta-doped quantum well structures were characterized by conventional Hall effect and light-modulated Shubnikov-de Haas (SdH) effect measurements. The large number of carriers that become available due to the delta-doping of the channel, leads to an apparent degeneracy in the well. As a result of this degeneracy, the carrier mobility remains constant as a function of temperature from 300 K down to 1.4 K. The large amount of impurity scattering, associated with the overlap of the charge carriers and the dopants, resulted in low carrier mobilities and restricted the observation of the oscillatory magneto-resistance used to characterize the two-dimensional electron gas (2DEG) by conventional SdH measurements. By light-modulating the carriers, we were able to observe the SdH oscillation at low magnetic fields, below 1.4 tesla, and derive a value for the quantum scattering time. Our results for the ratio of the transport and quantum scattering times are lower than those previously measured for similar structures using much higher magnetic fields.

Charge Transport in Spiro-OMeTAD Investigated through Space-Charge-Limited Current Measurements

NASA Astrophysics Data System (ADS)

Röhr, Jason A.; Shi, Xingyuan; Haque, Saif A.; Kirchartz, Thomas; Nelson, Jenny

2018-04-01

Extracting charge-carrier mobilities for organic semiconductors from space-charge-limited conduction measurements is complicated in practice by nonideal factors such as trapping in defects and injection barriers. Here, we show that by allowing the bandlike charge-carrier mobility, trap characteristics, injection barrier heights, and the shunt resistance to vary in a multiple-trapping drift-diffusion model, a numerical fit can be obtained to the entire current density-voltage curve from experimental space-charge-limited current measurements on both symmetric and asymmetric 2 ,2',7 ,7' -tetrakis(N ,N -di-4-methoxyphenylamine)-9 ,9' -spirobifluorene (spiro-OMeTAD) single-carrier devices. This approach yields a bandlike mobility that is more than an order of magnitude higher than the effective mobility obtained using analytical approximations, such as the Mott-Gurney law and the moving-electrode equation. It is also shown that where these analytical approximations require a temperature-dependent effective mobility to achieve fits, the numerical model can yield a temperature-, electric-field-, and charge-carrier-density-independent mobility. Finally, we present an analytical model describing trap-limited current flow through a semiconductor in a symmetric single-carrier device. We compare the obtained charge-carrier mobility and trap characteristics from this analytical model to the results from the numerical model, showing excellent agreement. This work shows the importance of accounting for traps and injection barriers explicitly when analyzing current density-voltage curves from space-charge-limited current measurements.

Adolescents’ risk perceptions on mobile phones and their base stations, their trust to authorities and incivility in using mobile phones: a cross-sectional survey on 2240 high school students in Izmir, Turkey

PubMed Central

2013-01-01

Background Use of mobile phones has rapidly risen among adolescents despite a lack of scientific certainty on their health risks. Risk perception is an important determinant of behavior, and studies on adolescents’ risk perceptions of mobile phones or base stations are very scarce. This study aims to evaluate high school students’ risk perceptions on mobile phones and base stations, their trust to authorities, their opinions regarding incivility while using mobile phones and to assess associated factors. Methods For this cross-sectional study, 2530 students were chosen with stratified cluster sampling among 20,493 high school students studying in Bornova district of Izmir, Turkey, among whom 2240 (88.5%) participated. Risk perceptions and opinions were questioned with a 5-point Likert scale for 24 statements grouped under four dimensions. The mean responses to the four dimensions were categorized as <3.5 (low) and ≥3.5 (high) and the determinants were analyzed with logistic regression. Results Mean risk perception scores for the mobile phone, base station, trust to authority and incivility dimensions were 3.69 ± 0.89, 4.34 ± 0.78, 3.77 ± 0.93, 3.16 ± 0.93 and the prevalence of high risk perception was 65.1%, 86.7%, 66.2%, 39.7%, respectively. In the mobile phone dimension; students attending industrial technical high school had lower risk perceptions while female students, lower mothers’ education groups and students not using mobile phones (OR = 2.82, 95% CI = 1.80-4.40) had higher risk perceptions. In the base station dimension girls had higher risk perceptions (OR = 1.68, 95% CI = 1.20-2.37). Girls and students attending industrial technical high school had significantly lower risk perception however 11-12th grade group perceived the risk higher (OR = 1.45 95% CI = 1.15-1.84) in the trust to authority dimension. For the incivility dimension, female students (OR = 1.44, 95% CI = 1.14-1.82), illiterate/only literate mothers (OR = 1.79, 95% CI = 1.04-2.75) and students not using mobile phones (OR = 2.50, 95% CI = 1.62-3.87) perceived higher risk. Conclusions Understanding the effects of these determinants might aid in developing more effective educational interventions to specific subgroups on this topic. As debates on the health consequences of electromagnetic fields continue, it would be cautious to approach this issue with a preventive perspective. Efforts should be made to equalize the varying level of knowledge and to ensure that students are informed accurately. PMID:23351724

Adolescents' risk perceptions on mobile phones and their base stations, their trust to authorities and incivility in using mobile phones: a cross-sectional survey on 2240 high school students in Izmir, Turkey.

PubMed

Hassoy, Hur; Durusoy, Raika; Karababa, Ali Osman

2013-01-25

Use of mobile phones has rapidly risen among adolescents despite a lack of scientific certainty on their health risks. Risk perception is an important determinant of behavior, and studies on adolescents' risk perceptions of mobile phones or base stations are very scarce. This study aims to evaluate high school students' risk perceptions on mobile phones and base stations, their trust to authorities, their opinions regarding incivility while using mobile phones and to assess associated factors. For this cross-sectional study, 2530 students were chosen with stratified cluster sampling among 20,493 high school students studying in Bornova district of Izmir, Turkey, among whom 2240 (88.5%) participated. Risk perceptions and opinions were questioned with a 5-point Likert scale for 24 statements grouped under four dimensions. The mean responses to the four dimensions were categorized as <3.5 (low) and ≥3.5 (high) and the determinants were analyzed with logistic regression. Mean risk perception scores for the mobile phone, base station, trust to authority and incivility dimensions were 3.69 ± 0.89, 4.34 ± 0.78, 3.77 ± 0.93, 3.16 ± 0.93 and the prevalence of high risk perception was 65.1%, 86.7%, 66.2%, 39.7%, respectively. In the mobile phone dimension; students attending industrial technical high school had lower risk perceptions while female students, lower mothers' education groups and students not using mobile phones (OR = 2.82, 95% CI = 1.80-4.40) had higher risk perceptions. In the base station dimension girls had higher risk perceptions (OR = 1.68, 95% CI = 1.20-2.37). Girls and students attending industrial technical high school had significantly lower risk perception however 11-12th grade group perceived the risk higher (OR = 1.45 95% CI = 1.15-1.84) in the trust to authority dimension. For the incivility dimension, female students (OR = 1.44, 95% CI = 1.14-1.82), illiterate/only literate mothers (OR = 1.79, 95% CI = 1.04-2.75) and students not using mobile phones (OR = 2.50, 95% CI = 1.62-3.87) perceived higher risk. Understanding the effects of these determinants might aid in developing more effective educational interventions to specific subgroups on this topic. As debates on the health consequences of electromagnetic fields continue, it would be cautious to approach this issue with a preventive perspective. Efforts should be made to equalize the varying level of knowledge and to ensure that students are informed accurately.

Gene and protein expression following exposure to radiofrequency fields from mobile phones.

PubMed

Vanderstraeten, Jacques; Verschaeve, Luc

2008-09-01

Since 1999, several articles have been published on genome-wide and/or proteome-wide response after exposure to radiofrequency (RF) fields whose signal and intensities were similar to or typical of those of currently used mobile telephones. These studies were performed using powerful high-throughput screening techniques (HTSTs) of transcriptomics and/or proteomics, which allow for the simultaneous screening of the expression of thousands of genes or proteins. We reviewed these HTST-based studies and compared the results with currently accepted concepts about the effects of RF fields on gene expression. In this article we also discuss these last in light of the recent concept of microwave-assisted chemistry. To date, the results of HTST-based studies of transcriptomics and/or proteomics after exposure to RF fields relevant to human exposure are still inconclusive, as most of the positive reports are flawed by methodologic imperfections or shortcomings. In addition, when positive findings were reported, no precise response pattern could be identified in a reproducible way. In particular, results from HTST studies tend to exclude the role of a cell stressor for exposure to RF fields at nonthermal intensities. However, on the basis of lessons from microwave-assisted chemistry, we can assume that RF fields might affect heat-sensitive gene or protein expression to an extent larger than would be predicted from temperature change only. But in all likelihood, this would concern intensities higher than those relevant to usual human exposure. The precise role of transcriptomics and proteomics in the screening of bioeffects from exposure to RF fields from mobile phones is still uncertain in view of the lack of positively identified phenotypic change and the lack of theoretical, as well as experimental, arguments for specific gene and/or protein response patterns after this kind of exposure.

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morrison, C., E-mail: c.morrison.2@warwick.ac.uk; Casteleiro, C.; Leadley, D. R.

The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour,more » analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.« less

Higher Molecular Weight Leads to Improved Photoresponsivity Charge Transport and Interfacial Ordering in a Narrow Bandgap Semiconducting Polymer

DOE Office of Scientific and Technical Information (OSTI.GOV)

M Tong; S Cho; J Rogers

2011-12-31

Increasing the molecular weight of the low-bandgap semiconducting copolymer, poly[(4,4-didoecyldithieno[3,2-b:2',3'-d]silole)-2,6-diyl-alt-(2,1,3-benzothiadiazole)-4,7-diyl], Si-PDTBT, from 9 kDa to 38 kDa improves both photoresponsivity and charge transport properties dramatically. The photocurrent measured under steady state conditions is 20 times larger in the higher molecular weight polymer (HM{sub n} Si-PDTBT). Different decays of polarization memory in transient photoinduced spectroscopy measurements are consistent with more mobile photoexcitations in HM{sub n} Si-PDTBT relative to the lower molecular weight counterpart (LM{sub n} Si-PDTBT). Analysis of the current-voltage characteristics of field effect transistors reveals an increase in the mobility by a factor of 700 for HM{sub n} Si-PDTBT. Nearmore » edge X-ray absorption fine structure (NEXAFS) spectroscopy and grazing incidence small angle X-ray scattering (GISAXS) measurements demonstrate that LM{sub n} Si-PDTBT forms a disordered morphology throughout the depth of the film, whereas HM{sub n} Si-PDTBT exhibits pronounced {pi}-{pi} stacking in an edge-on configuration near the substrate interface. Increased interchain overlap between polymers in the edge-on configuration in HM{sub n} Si-PDTBT results in the higher carrier mobility. The improved optical response, transport mobility, and interfacial ordering highlight the subtle role that the degree of polymerization plays on the optoelectronic properties of conjugated polymer based organic semiconductors.« less

Directionally Aligned Amorphous Polymer Chains via Electrohydrodynamic-Jet Printing: Analysis of Morphology and Polymer Field-Effect Transistor Characteristics.

PubMed

Kim, Yebyeol; Bae, Jaehyun; Song, Hyun Woo; An, Tae Kyu; Kim, Se Hyun; Kim, Yun-Hi; Park, Chan Eon

2017-11-15

Electrohydrodynamic-jet (EHD-jet) printing provides an opportunity to directly assembled amorphous polymer chains in the printed pattern. Herein, an EHD-jet printed amorphous polymer was employed as the active layer for fabrication of organic field-effect transistors (OFETs). Under optimized conditions, the field-effect mobility (μ FET ) of the EHD-jet printed OFETs was 5 times higher than the highest μ FET observed in the spin-coated OFETs, and this improvement was achieved without the use of complex surface templating or additional pre- or post-deposition processing. As the chain alignment can be affected by the surface energy of the dielectric layer in EHD-jet printed OFETs, dielectric layers with varying wettability were examined. Near-edge X-ray absorption fine structure measurements were performed to compare the amorphous chain alignment in OFET active layers prepared by EHD-jet printing and spin coating.

Effectiveness of Mobile Apps in Teaching Field-Based Identification Skills

ERIC Educational Resources Information Center

Thomas, Rebecca L.; Fellowes, Mark D. E.

2017-01-01

It has been suggested that few students graduate with the skills required for many ecological careers, as field-based learning is said to be in decline in academic institutions. Here, we asked if mobile technology could improve field-based learning, using ability to identify birds as the study metric. We divided a class of ninety-one undergraduate…

Development of a telemetry and yield-mapping system of olive harvester.

PubMed

Castillo-Ruiz, Francisco J; Pérez-Ruiz, Manuel; Blanco-Roldán, Gregorio L; Gil-Ribes, Jesús A; Agüera, Juan

2015-02-10

Sensors, communication systems and geo-reference units are required to achieve an optimized management of agricultural inputs with respect to the economic and environmental aspects of olive groves. In this study, three commercial olive harvesters were tracked during two harvesting seasons in Spain and Chile using remote and autonomous equipment that was developed to determine their time efficiency and effective based on canopy shaking for fruit detachment. These harvesters work in intensive/high-density (HD) and super-high-density (SHD) olive orchards. A GNSS (Global Navigation Satellite System) and GSM (Global System for Mobile Communications) device was installed to track these harvesters. The GNSS receiver did not affect the driver's work schedule. Time elements methodology was adapted to the remote data acquisition system. The effective field capacity and field efficiency were investigated. In addition, the field shape, row length, angle between headland alley and row, and row alley width were measured to determinate the optimum orchard design parameters value. The SHD olive harvester showed significant lower effective field capacity values when alley width was less than 4 m. In addition, a yield monitor was developed and installed on a traditional olive harvester to obtain a yield map from the harvested area. The hedge straddle harvester stood out for its highly effective field capacity; nevertheless, a higher field efficiency was provided by a non-integral lateral canopy shaker. All of the measured orchard parameters have influenced machinery yields, whether effective field capacity or field efficiency. A saving of 40% in effective field capacity was achieved with a reduction from 4 m or higher to 3.5 m in alley width for SHD olive harvester. A yield map was plotted using data that were acquired by a yield monitor, reflecting the yield gradient in spite of the larger differences between tree yields.

Impact of the intermixed phase and the channel network on the carrier mobility of nanostructured solar cells

NASA Astrophysics Data System (ADS)

Woellner, Cristiano F.; Freire, José A.

2016-02-01

We analyzed the impact of the complex channel network of donor and acceptor domains in nanostructured solar cells on the mobility of the charge carriers moving by thermally activated hopping. Particular attention was given to the so called intermixed phase, or interface roughness, that has recently been shown to promote an increase in the cell efficiency. The domains were obtained from a Monte Carlo simulation of a two-species lattice gas. We generated domain morphologies with controllable channel size and interface roughness. The field and density dependence of the carrier hopping mobility in different morphologies was obtained by solving a master equation. Our results show that the mobility decreases with roughness and increases with typical channel sizes. The deleterious effect of the roughness on the mobility is quite dramatic at low carrier densities and high fields. The complex channel network is shown to be directly responsible for two potentially harmful effects to the cell performance: a remarkable decrease of the mobility with increasing field and the accumulation of charge at the domains interface, which leads to recombination losses.

A Challenging Issue in the Etiology of Speech Problems: The Effect of Maternal Exposure to Electromagnetic Fields on Speech Problems in the Offspring

PubMed Central

Zarei, S.; Mortazavi, S. M. J.; Mehdizadeh, A. R.; Jalalipour, M.; Borzou, S.; Taeb, S.; Haghani, M.; Mortazavi, S. A. R.; Shojaei-fard, M. B.; Nematollahi, S.; Alighanbari, N.; Jarideh, S.

2015-01-01

Background Nowadays, mothers are continuously exposed to different sources of electromagnetic fields before and even during pregnancy.  It has recently been shown that exposure to mobile phone radiation during pregnancy may lead to adverse effects on the brain development in offspring and cause hyperactivity. Researchers have shown that behavioral problems in laboratory animals which have a similar appearance to ADHD are caused by intrauterine exposure to mobile phones. Objective The purpose of this study was to investigate whether the maternal exposure to different sources of electromagnetic fields affect on the rate and severity of speech problems in their offspring. Methods In this study, mothers of 35 healthy 3-5 year old children (control group) and 77 children and diagnosed with speech problems who had been referred to a speech treatment center in Shiraz, Iran were interviewed. These mothers were asked whether they had exposure to different sources of electromagnetic fields such as mobile phones, mobile base stations, Wi-Fi, cordless phones, laptops and power lines. Results We found a significant association between either the call time (P=0.002) or history of mobile phone use (months used) and speech problems in the offspring (P=0.003). However, other exposures had no effect on the occurrence of speech problems. To the best of our knowledge, this is the first study to investigate a possible association between maternal exposure to electromagnetic field and speech problems in the offspring. Although a major limitation in our study is the relatively small sample size, this study indicates that the maternal exposure to common sources of electromagnetic fields such as mobile phones can affect the occurrence of speech problems in the offspring. PMID:26396971

A Challenging Issue in the Etiology of Speech Problems: The Effect of Maternal Exposure to Electromagnetic Fields on Speech Problems in the Offspring.

PubMed

Zarei, S; Mortazavi, S M J; Mehdizadeh, A R; Jalalipour, M; Borzou, S; Taeb, S; Haghani, M; Mortazavi, S A R; Shojaei-Fard, M B; Nematollahi, S; Alighanbari, N; Jarideh, S

2015-09-01

Nowadays, mothers are continuously exposed to different sources of electromagnetic fields before and even during pregnancy.  It has recently been shown that exposure to mobile phone radiation during pregnancy may lead to adverse effects on the brain development in offspring and cause hyperactivity. Researchers have shown that behavioral problems in laboratory animals which have a similar appearance to ADHD are caused by intrauterine exposure to mobile phones. The purpose of this study was to investigate whether the maternal exposure to different sources of electromagnetic fields affect on the rate and severity of speech problems in their offspring. In this study, mothers of 35 healthy 3-5 year old children (control group) and 77 children and diagnosed with speech problems who had been referred to a speech treatment center in Shiraz, Iran were interviewed. These mothers were asked whether they had exposure to different sources of electromagnetic fields such as mobile phones, mobile base stations, Wi-Fi, cordless phones, laptops and power lines. We found a significant association between either the call time (P=0.002) or history of mobile phone use (months used) and speech problems in the offspring (P=0.003). However, other exposures had no effect on the occurrence of speech problems. To the best of our knowledge, this is the first study to investigate a possible association between maternal exposure to electromagnetic field and speech problems in the offspring. Although a major limitation in our study is the relatively small sample size, this study indicates that the maternal exposure to common sources of electromagnetic fields such as mobile phones can affect the occurrence of speech problems in the offspring.

Higher Education Students’ Behaviour to Adopt Mobile Learning

NASA Astrophysics Data System (ADS)

Batmetan, J. R.; Palilingan, V. R.

2018-02-01

Mobile phone is an electronic device most often used by Y generation in Indonesia. This ages have become an important part in the growth of higher education in this country. The problem raised in this study is that very few students in higher education are adopting and accessing digital learning content using mobile phones. The objective of this study is to investigate the higher education students’ behaviour in using mobile learning. The research method used is Structural equation models (SEM) method to analyse the factors that influence higher education students’ behaviour in using mobile learning. The results of this study indicate tends of this student 85% to keep internet access in privacy. The majority of respondent is 78% having behaviour to keep adopting mobile learning and still use it in the future. Why? because this study shows that on the level of usability, easy to use, easy to learn, in various devices have a significant effect on the level of adoption of mobile learning. Implication of this study is higher education students’ behaviour of especially Y generation tends to prioritize the usability towards mobile learning and will continue to adopt mobile learning in the future.

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Vacuum relaxation and annealing-induced enhancement of mobility of regioregular poly (3-hexylthiophene) field-effect transistors

NASA Astrophysics Data System (ADS)

Tian, Xue-Yan; Xu, Zheng; Zhao, Su-Ling; Zhang, Fu-Jun; Xu, Xu-Rong; Yuan, Guang-Cai; Li, Jing; Sun, Qin-Jun; Wang, Ying

2009-11-01

In order to enhance the performance of regioregular poly(3-hexylthiophene) (RR-P3HT) field-effect transistors (FETs), RR-P3HT FETs are prepared by the spin-coating method followed by vacuum placement and annealing. This paper reports that the crystal structure, the molecule interconnection, the surface morphology, and the charge carrier mobility of RR-P3HT films are affected by vacuum relaxation and annealing. The results reveal that the field-effect mobility of RR-P3HT FETs can reach 4.17 × 10-2 m2/(V · s) by vacuum relaxation at room temperature due to an enhanced local self-organization. Furthermore, it reports that an appropriate annealing temperature can facilitate the crystal structure, the orientation and the interconnection of polymer molecules. These results show that the field-effect mobility of device annealed at 150 °C for 10 minutes in vacuum at atmosphere and followed by placement for 20 hours in vacuum at room temperature is enhanced dramatically to 9.00 × 10-2 cm2/(V · s).

Molecular Self-Assembly and Interfacial Engineering for Highly Efficient Organic Field Effect Transistors and Solar Cells

DTIC Science & Technology

2012-09-23

balance between disordered SAMs to promote large pentacene grains and thick SAMs to aid in physically buffering the charge carriers in pentacene from...to 0.76 µF/cm2), and enhanced pentacene OFET device performance such as higher charge carrier mobility, current on/off ratio, and lower threshold...surface charge trap • Tuning of surface energy • Control of surface group orientation SAM/MO ultrathin dielectric: • Low-voltage operation

Hole transport characteristics in phosphorescent dye-doped NPB films by admittance spectroscopy

NASA Astrophysics Data System (ADS)

Wang, Ying; Chen, Jiangshan; Huang, Jinying; Dai, Yanfeng; Zhang, Zhiqiang; Liu, Su; Ma, Dongge

2014-05-01

Admittance spectroscopy is a powerful tool to determine the carrier mobility. The carrier mobility is a significant parameter to understand the behavior or to optimize the organic light-emitting diode or other organic semiconductor devices. Hole transport in phosphorescent dye, bis[2-(9,9-diethyl-9H-fluoren-2-yl)-1-phenyl-1Hbenzoimidazol-N,C3] iridium(acetylacetonate [(fbi)2Ir(acac)]) doped into N,N-diphenyl-N,N-bis(1-naphthylphenyl)-1,1-biphenyl-4,4-diamine (NPB) films was investigated by admittance spectroscopy. The results show that doped (fbi)2Ir(acac) molecules behave as hole traps in NPB, and lower the hole mobility. For thicker films(≳300 nm), the electric field dependence of hole mobility is as expected positive, i.e., the mobility increases exponentially with the electric field. However, for thinner films (≲300 nm), the electric field dependence of hole mobility is negative, i.e., the hole mobility decreases exponentially with the electric field. Physical mechanisms behind the negative field dependence of hole mobility are discussed. In addition, three frequency regions were divided to analyze the behaviors of the capacitance in the hole-only device and the physical mechanism was explained by trap theory and the parasitic capacitance effect.

Controversies related to electromagnetic field exposure on peripheral nerves.

PubMed

Say, Ferhat; Altunkaynak, Berrin Zuhal; Coşkun, Sina; Deniz, Ömür Gülsüm; Yıldız, Çağrı; Altun, Gamze; Kaplan, Arife Ahsen; Kaya, Sefa Ersan; Pişkin, Ahmet

2016-09-01

Electromagnetic field (EMF) is a pervasive environmental presence in modern society. In recent years, mobile phone usage has increased rapidly throughout the world. As mobile phones are generally held close to the head while talking, studies have mostly focused on the central and peripheral nervous system. There is a need for further research to ascertain the real effect of EMF exposure on the nervous system. Several studies have clearly demonstrated that EMF emitted by cell phones could affect the systems of the body as well as functions. However, the adverse effects of EMF emitted by mobile phones on the peripheral nerves are still controversial. Therefore, this review summarizes current knowledge on the possible positive or negative effects of electromagnetic field on peripheral nerves. Copyright © 2015 Elsevier B.V. All rights reserved.

The Future of Classification in Wheelchair Sports; Can Data Science and Technological Advancement Offer an Alternative Point of View?

PubMed

van der Slikke, Rienk M A; Bregman, Daan J J; Berger, Monique A M; de Witte, Annemarie M H; Veeger, Dirk-Jan H E J

2017-11-01

Classification is a defining factor for competition in wheelchair sports, but it is a delicate and time-consuming process with often questionable validity. 1 New inertial sensor based measurement methods applied in match play and field tests, allow for more precise and objective estimates of the impairment effect on wheelchair mobility performance. It was evaluated if these measures could offer an alternative point of view for classification. Six standard wheelchair mobility performance outcomes of different classification groups were measured in match play (n=29), as well as best possible performance in a field test (n=47). In match-results a clear relationship between classification and performance level is shown, with increased performance outcomes in each adjacent higher classification group. Three outcomes differed significantly between the low and mid-class groups, and one between the mid and high-class groups. In best performance (field test), a split between the low and mid-class groups shows (5 out of 6 outcomes differed significantly) but hardly any difference between the mid and high-class groups. This observed split was confirmed by cluster analysis, revealing the existence of only two performance based clusters. The use of inertial sensor technology to get objective measures of wheelchair mobility performance, combined with a standardized field-test, brought alternative views for evidence based classification. The results of this approach provided arguments for a reduced number of classes in wheelchair basketball. Future use of inertial sensors in match play and in field testing could enhance evaluation of classification guidelines as well as individual athlete performance.

Origin of the different transport properties of electron and hole polarons in an ambipolar polyselenophene-based conjugated polymer

NASA Astrophysics Data System (ADS)

Chen, Zhuoying; Bird, Matthew; Lemaur, Vincent; Radtke, Guillaume; Cornil, Jérôme; Heeney, Martin; McCulloch, Iain; Sirringhaus, Henning

2011-09-01

Understanding the mechanisms limiting ambipolar transport in conjugated polymer field-effect transistors (FETs) is of both fundamental and practical interest. Here, we present a systematic study comparing hole and electron charge transport in an ambipolar conjugated polymer, semicrystalline poly(3,3''-di-n-decylterselenophene) (PSSS). Starting from a detailed analysis of the device characteristics and temperature/charge-density dependence of the mobility, we interpret the difference between hole and electron transport through both the Vissenberg-Matters and the mobility-edge model. To obtain microscopic insight into the quantum mechanical wave function of the charges at a molecular level, we combine charge modulation spectroscopy (CMS) measuring the charge-induced absorption signatures from positive and negative polarons in these ambipolar FETs with corresponding density functional theory (DFT) calculations. We observe a significantly higher switch-on voltage for electrons than for holes due to deep electron trap states, but also a higher activation energy of the mobility for mobile electrons. The CMS spectra reveal that the electrons that remain mobile and contribute to the FET current have a wave function that is more localized onto a single polymer chain than that of holes, which is extended over several polymer chains. We interpret this as evidence that the transport properties of the mobile electrons in PSSS are still affected by the presence of deep electron traps. The more localized electron state could be due to the mobile electrons interacting with shallow trap states in the vicinity of a chemical, potentially water-related, impurity that might precede the capture of the electron into a deeply trapped state.

Human short-term exposure to electromagnetic fields emitted by mobile phones decreases computer-assisted visual reaction time.

PubMed

Mortazavi, S M J; Rouintan, M S; Taeb, S; Dehghan, N; Ghaffarpanah, A A; Sadeghi, Z; Ghafouri, F

2012-06-01

The worldwide dramatic increase in mobile phone use has generated great concerns about the detrimental effects of microwave radiations emitted by these communication devices. Reaction time plays a critical role in performing tasks necessary to avoid hazards. As far as we know, this study is the first survey that reports decreased reaction time after exposure to electromagnetic fields generated by a high specific absorption rate mobile phone. It is also the first study in which previous history of mobile phone use is taken into account. The aim of this study was to assess both the acute and chronic effects of electromagnetic fields emitted by mobile phones on reaction time in university students. Visual reaction time (VRT) of young university students was recorded with a simple blind computer-assisted-VRT test, before and after a 10 min real/sham exposure to electromagnetic fields of mobile phones. Participants were 160 right-handed university students aged 18-31. To assess the effect of chronic exposures, the reaction time in sham-exposed phases were compared among low level, moderate and frequent users of mobile phones. The mean ± SD reaction time after real exposure and sham exposure were 286.78 ± 31.35 ms and 295.86 ± 32.17 ms (P < 0.001), respectively. The age of students did not significantly alter the reaction time either in talk or in standby mode. The reaction time either in talk or in standby mode was shorter in male students. The students' VRT was significantly affected by exposure to electromagnetic fields emitted by a mobile phone. It can be concluded that these exposures cause decreased reaction time, which may lead to a better response to different hazards. In this light, this phenomenon might decrease the chances of human errors and fatal accidents.

Universal Correlation between Flatband Voltage and Electron Mobility in TiN/HfSiON Devices with MgO or La2O3 Incorporation and Stack Variation

NASA Astrophysics Data System (ADS)

Mise, Nobuyuki; Kadoshima, Masaru; Morooka, Tetsu; Eimori, Takahisa; Nara, Yasuo; Ohji, Yuzuru

2008-10-01

We investigated the controversial effective workfunction and electron mobility of TiN/HfSiON devices by intentionally adding MgO or La2O3 into HfSiON and by changing the material on TiN or the TiN thickness. As a result, we found a close relationship between the electron mobility at low effective field and the flatband voltage. This relationship is explained on the basis of the fixed charge in HfSiON and its neutralization. The intrinsic workfunction of TiN/HfSiON without charge is determined to be 4.3 eV from the flatband voltage when the electron mobility at low effective field is the highest.

Mobility overestimation due to gated contacts in organic field-effect transistors

PubMed Central

Bittle, Emily G.; Basham, James I.; Jackson, Thomas N.; Jurchescu, Oana D.; Gundlach, David J.

2016-01-01

Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current–voltage characteristics and interpreted by using the classical metal oxide–semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm2 V−1 s−1), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current–voltage characterization are overestimated by one order of magnitude or more. PMID:26961271

Development of an RF-EMF Exposure Surrogate for Epidemiologic Research.

PubMed

Roser, Katharina; Schoeni, Anna; Bürgi, Alfred; Röösli, Martin

2015-05-22

Exposure assessment is a crucial part in studying potential effects of RF-EMF. Using data from the HERMES study on adolescents, we developed an integrative exposure surrogate combining near-field and far-field RF-EMF exposure in a single brain and whole-body exposure measure. Contributions from far-field sources were modelled by propagation modelling and multivariable regression modelling using personal measurements. Contributions from near-field sources were assessed from both, questionnaires and mobile phone operator records. Mean cumulative brain and whole-body doses were 1559.7 mJ/kg and 339.9 mJ/kg per day, respectively. 98.4% of the brain dose originated from near-field sources, mainly from GSM mobile phone calls (93.1%) and from DECT phone calls (4.8%). Main contributors to the whole-body dose were GSM mobile phone calls (69.0%), use of computer, laptop and tablet connected to WLAN (12.2%) and data traffic on the mobile phone via WLAN (6.5%). The exposure from mobile phone base stations contributed 1.8% to the whole-body dose, while uplink exposure from other people's mobile phones contributed 3.6%. In conclusion, the proposed approach is considered useful to combine near-field and far-field exposure to an integrative exposure surrogate for exposure assessment in epidemiologic studies. However, substantial uncertainties remain about exposure contributions from various near-field and far-field sources.

Development of an RF-EMF Exposure Surrogate for Epidemiologic Research

PubMed Central

Roser, Katharina; Schoeni, Anna; Bürgi, Alfred; Röösli, Martin

2015-01-01

Exposure assessment is a crucial part in studying potential effects of RF-EMF. Using data from the HERMES study on adolescents, we developed an integrative exposure surrogate combining near-field and far-field RF-EMF exposure in a single brain and whole-body exposure measure. Contributions from far-field sources were modelled by propagation modelling and multivariable regression modelling using personal measurements. Contributions from near-field sources were assessed from both, questionnaires and mobile phone operator records. Mean cumulative brain and whole-body doses were 1559.7 mJ/kg and 339.9 mJ/kg per day, respectively. 98.4% of the brain dose originated from near-field sources, mainly from GSM mobile phone calls (93.1%) and from DECT phone calls (4.8%). Main contributors to the whole-body dose were GSM mobile phone calls (69.0%), use of computer, laptop and tablet connected to WLAN (12.2%) and data traffic on the mobile phone via WLAN (6.5%). The exposure from mobile phone base stations contributed 1.8% to the whole-body dose, while uplink exposure from other people’s mobile phones contributed 3.6%. In conclusion, the proposed approach is considered useful to combine near-field and far-field exposure to an integrative exposure surrogate for exposure assessment in epidemiologic studies. However, substantial uncertainties remain about exposure contributions from various near-field and far-field sources. PMID:26006132

Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Beer, Chris; Whall, Terry; Parker, Evan; Leadley, David; De Jaeger, Brice; Nicholas, Gareth; Zimmerman, Paul; Meuris, Marc; Szostak, Slawomir; Gluszko, Grzegorz; Lukasiak, Lidia

2007-12-01

Effective mobility measurements have been made at 4.2K on high performance high-k gated germanium p-type metal-oxide-semiconductor field effect transistors with a range of Ge/gate dielectric interface state densities. The mobility is successfully modelled by assuming surface roughness and interface charge scattering at the SiO2 interlayer/Ge interface. The deduced interface charge density is approximately equal to the values obtained from the threshold voltage and subthreshold slope measurements on each device. A hydrogen anneal reduces both the interface state density and the surface root mean square roughness by 20%.

Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Ma, Nan; Jena, Debdeep

2015-03-01

In this work, the consequence of the high band-edge density of states on the carrier statistics and quantum capacitance in transition metal dichalcogenide two-dimensional semiconductor devices is explored. The study questions the validity of commonly used expressions for extracting carrier densities and field-effect mobilities from the transfer characteristics of transistors with such channel materials. By comparison to experimental data, a new method for the accurate extraction of carrier densities and mobilities is outlined. The work thus highlights a fundamental difference between these materials and traditional semiconductors that must be considered in future experimental measurements.

Highly anisotropic mobility in solution processed TIPS-pentacene film studied by independently driven four GaIn probes

NASA Astrophysics Data System (ADS)

Yoshimoto, Shinya; Takahashi, Kohtaro; Suzuki, Mitsuharu; Yamada, Hiroko; Miyahara, Ryosuke; Mukai, Kozo; Yoshinobu, Jun

2017-08-01

We have studied in-plane anisotropy in the field-effect mobility of solution-processed organic semiconductor 6,13-bis(triisopropylsilylethynyl)pentacene by using independently driven four gallium indium (Ga-In) probes. Liquid-metal Ga-In probes are highly effective for reproducible conductivity measurements of organic thin films. We demonstrated that a high mobility anisotropy of 44 was obtained by using a square four-probe method and a feedback circuit to keep the channel potential constant. The present method minimized the influences of the contact resistance and the insensitivity of anisotropy in a linear arrangement in two-dimensional field-effect transistors.

Atomically engineered epitaxial anatase TiO 2 metal-semiconductor field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Brian S. Y.; Minohara, Makoto; Hikita, Yasuyuki

Here, anatase TiO 2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO 2 and LaAlO 3 (001), which arises for LaO-terminated LaAlO 3, while the AlO 2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a highmore » field-effect mobility μ FE of 3.14 cm 2 (V s) –1 approaching 98% of the corresponding Hall mobility μ Hall. Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ~4 V.« less

Atomically engineered epitaxial anatase TiO 2 metal-semiconductor field-effect transistors

DOE PAGES

Kim, Brian S. Y.; Minohara, Makoto; Hikita, Yasuyuki; ...

2018-03-26

Here, anatase TiO 2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO 2 and LaAlO 3 (001), which arises for LaO-terminated LaAlO 3, while the AlO 2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a highmore » field-effect mobility μ FE of 3.14 cm 2 (V s) –1 approaching 98% of the corresponding Hall mobility μ Hall. Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ~4 V.« less

Simulation of Space Charge Dynamic in Polyethylene Under DC Continuous Electrical Stress

NASA Astrophysics Data System (ADS)

Boukhari, Hamed; Rogti, Fatiha

2016-10-01

The space charge dynamic plays a very important role in the aging and breakdown of polymeric insulation materials under high voltage. This is due to the intensification of the local electric field and the attendant chemical-mechanical effects in the vicinity around the trapped charge. In this paper, we have investigated the space charge dynamic in low-density polyethylene under high direct-current voltage, which is evaluated by experimental conditions. The evaluation is on the basis of simulation using a bipolar charge transport model consisting of charge injection, transports, trapping, detrapping, and recombination phenomena. The theoretical formulation of the physical problem is based on the Poisson, the continuity, and the transport equations. Numerical results provide temporal and local distributions of the electric field, the space charge density for the different kinds of charges (net charge density, mobile and trapped of electron density, mobile hole density), conduction and displacement current densities, and the external current. The result shows the appearance of the negative packet-like space charge with a large amount of the bulk under the dc electric field of 100 kV/mm, and the induced distortion of the electric field is largely near to the anode, about 39% higher than the initial electric field applied.

Exposure to non-ionizing electromagnetic fields emitted from mobile phones induced DNA damage in human ear canal hair follicle cells.

PubMed

Akdag, Mehmet; Dasdag, Suleyman; Canturk, Fazile; Akdag, Mehmet Zulkuf

2018-01-01

The aim of this study was to investigate effect of radiofrequency radiation (RFR) emitted from mobile phones on DNA damage in follicle cells of hair in the ear canal. The study was carried out on 56 men (age range: 30-60 years old)in four treatment groups with n = 14 in each group. The groups were defined as follows: people who did not use a mobile phone (Control), people use mobile phones for 0-30 min/day (second group), people use mobile phones for 30-60 min/day (third group) and people use mobile phones for more than 60 min/day (fourth group). Ear canal hair follicle cells taken from the subjects were analyzed by the Comet Assay to determine DNA damages. The Comet Assay parameters measured were head length, tail length, comet length, percentage of head DNA, tail DNA percentage, tail moment, and Olive tail moment. Results of the study showed that DNA damage indicators were higher in the RFR exposure groups than in the control subjects. In addition, DNA damage increased with the daily duration of exposure. In conclusion, RFR emitted from mobile phones has a potential to produce DNA damage in follicle cells of hair in the ear canal. Therefore, mobile phone users have to pay more attention when using wireless phones.

An Analysis of the Effect of Mobile Learning on Lebanese Higher Education

ERIC Educational Resources Information Center

Jabbour, Khayrazad Kari

2014-01-01

This research explores the effect of mobile technology in Lebanese higher education classrooms. Three components were utilized to evaluate the impact: student attitudes, student achievements, and educational process. This study used both quantitative and qualitative methods to examine the research questions. The main sources for data collection…

Mobilization of natural colloids from an iron oxide-coated sand aquifer--Effect of pH and ionic strength

USGS Publications Warehouse

Bunn, Rebecca A.; Magelky, Robin D.; Ryan, Joseph N.; Elimelech, Menachem

2002-01-01

Field and laboratory column experiments were performed to assess the effect of elevated pH and reduced ionic strength on the mobilization of natural colloids in a ferric oxyhydroxide-coated aquifer sediment. The field experiments were conducted as natural gradient injections of groundwater amended by sodium hydroxide additions. The laboratory experiments were conducted in columns of undisturbed, oriented sediments and disturbed, disoriented sediments. In the field, the breakthrough of released colloids coincided with the pH pulse breakthrough and lagged the bromide tracer breakthrough. The breakthrough behavior suggested that the progress of the elevated pH front controlled the transport of the mobilized colloids. In the laboratory, about twice as much colloid release occurred in the disturbed sediments as in the undisturbed sediments. The field and laboratory experiments both showed that the total mass of colloid release increased with increasing pH until the concurrent increase in ionic strength limited release. A decrease in ionic strength did not mobilize significant amounts of colloids in the field. The amount of colloids released normalized to the mass of the sediments was similar for the field and the undisturbed laboratory experiments.

Survey of the Effects of Exposure to 900 MHz Radiofrequency Radiation Emitted by a GSM Mobile Phone on the Pattern of Muscle Contractions in an Animal Model

PubMed Central

Mortazavi, S. M. J.; Rahimi, S.; Talebi, A.; Soleimani, A.; Rafati, A.

2015-01-01

Background: The rapid development of wireless telecommunication technologies over the past decades, has led to significant changes in the exposure of the general public to electromagnetic fields. Nowadays, people are continuously exposed to different sources of electromagnetic fields such as mobile phones, mobile base stations, cordless phones, Wi-Fi routers, and power lines. Therefore, the last decade witnessed a rapidly growing concern about the possible health effects of exposure to electromagnetic fields emitted by these sources. Materials and Methods: In this study that was aimed at investigating the effects of exposure to radiofrequency (RF) radiation emitted by a GSM mobile phone on the pattern of contraction in frog’s isolated gastrocnemius muscle after stimulation with single square pulses of 1V (1 Hz), pulse height of contractions, the time interval between two subsequent contractions and the latency period were measured. Results: Our findings showed that the pulse height of contractions muscle could be affected by the exposure to electromagnetic fields. Especially, the latency period was effectively altered in RF-exposed samples. However, none of the experiments could show an alteration in the time interval between two subsequent contractions after exposure to electromagnetic fields. Conclusion: These findings support early reports which indicated a wide variety of non-thermal effects of electromagnetic radiation on amphibians including the effects on the pattern of muscle extractions. PMID:26396968

Impact of Illumination on Charge Injection and Accumulation in Organic Transistor in Presence of Plasmonic Nanoparticles

NASA Astrophysics Data System (ADS)

Lee, Keanchuan; Weis, Martin; Chen, Xiangyu; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2013-04-01

Effects of illumination on the carrier injection and transport due to photogenerated carriers were investigated in pentacene organic field-effect transistor (OFET). A plasmonic nanoparticles self-assembled monolayer (SAM) was incorporated in pentacene FET to act to enhance the photo-carrier generation. The influence of nanoparticles (NPs) on the photogeneration as well as on the charge trapping has been investigated using the current-voltage (I-V) and impedance spectroscopy (IS) measurements. The I-V results proved higher amount of photogenerated charge in presence of NPs even though this device has the contact resistance about two orders higher and effective mobility an order lower than the reference device without plasmonic NPs. The IS analysis of relaxation times verified strong influence of NPs on the charge trapping.

The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer.

PubMed

Shin, Yeonwoo; Kim, Sang Tae; Kim, Kuntae; Kim, Mi Young; Oh, Saeroonter; Jeong, Jae Kyeong

2017-09-07

High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved through low-temperature crystallization enabled via a reaction with a transition metal catalytic layer. For conventional amorphous IGZO TFTs, the active layer crystallizes at thermal annealing temperatures of 600 °C or higher, which is not suitable for displays using a glass substrate. The crystallization temperature is reduced when in contact with a Ta layer, where partial crystallization at the IGZO back-channel occurs with annealing at 300 °C, while complete crystallization of the active layer occurs at 400 °C. The field-effect mobility is significantly boosted to 54.0 cm 2 /V·s for the IGZO device with a metal-induced polycrystalline channel formed at 300 °C compared to 18.1 cm 2 /V·s for an amorphous IGZO TFT without a catalytic layer. This work proposes a facile and effective route to enhance device performance by crystallizing the IGZO layer with standard annealing temperatures, without the introduction of expensive laser irradiation processes.

Phase-field modeling of void anisotropic growth behavior in irradiated zirconium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, G. M.; Wang, H.; Lin, De-Ye

2017-06-01

A three-dimensional (3D) phase field model was developed to study the effects of surface energy and diffusivity anisotropy on void growth behavior in irradiated Zr. The gamma surface energy function, which is used in the phase field model, was developed with the surface energy anisotropy calculated from the molecular dynamics (MD) simulations. It is assumed that vacancies have much larger mobility in c-axis than a- and b- axes while interstitials have much larger mobility in basal plane then that in c-axis. With the model, the equilibrium void morphology and the effect of defect concentrations and defect mobility anisotropy on voidmore » growth behavior were simulated. The simulations demonstrated that 1) The developed phase-field model can correctly reproduce the faceted void morphology predicted by the Wullf construction. 2) With isotropic diffusivity the void prefers to grow on the basal plane. 3) When the vacancy has large mobility along c-axis and interstitial has a large mobility on the basal plane of hexagonal closed packed (hcp) Zr alloys a platelet void grows in c-direction and shrinks on the basal plane, which is in agreement with the experimental observation of void growth behavior in irradiated Zr.« less

Effect of moisture on the field dependence of mobility for gas-phase ions of organophosphorus compounds at atmospheric pressure with field asymmetric ion mobility spectrometry.

PubMed

Krylova, N; Krylov, E; Eiceman, G A; Stone, J A

2003-05-15

The electric field dependence of the mobilities of gas-phase protonated monomers [(MH+(H2O)n] and proton-bound dimers [M2H+(H2O)n] of organophosphorus compounds was determined at E/N values between 0 and 140 Td at ambient pressure in air with moisture between 0.1 and 15 000 ppm. Field dependence was described as alpha (E/N) and was obtained from the measurements of compensation voltage versus field amplitude in a planar high-field asymmetric waveform ion mobility spectrometer. The alpha function for protonated monomers to 140 Td was constant from 0.1 to 10 ppm moisture in air with onset of effect at approximately 50 ppm. The value of alpha increased 2-fold from 100 to 1000 ppm at all E/N values. At moisture values between 1000 and 10 000 ppm, a 2-fold or more increase in alpha (E/N) was observed. In a model proposed here, field dependence for mobility through changes in collision cross sections is governed by the degree of solvation of the protonated molecule by neutral molecules. The process of ion declustering at high E/N values was consistent with the kinetics of ion-neutral collisional periods, and the duty cycle of the waveform applied to the drift tube. Water was the principal neutral above 50 ppm moisture in air, and nitrogen was proposed as the principal neutral below 50 ppm.

Effect of attentional retraining on cognition, craving, and smoking in African American smokers.

PubMed

Robinson, Cendrine D; Muench, Christine; Brede, Emily; Endrighi, Romano; Szeto, Edwin H; Sells, Joanna R; Lammers, John P; Okuyemi, Kolawole S; Waters, Andrew J

2017-08-01

African American cigarette smokers have lower rates of cessation than Whites and live in communities with a higher number of tobacco advertisements. Exposure to smoking cues may promote smoking and undermine cessation. It may be possible to reduce attention to smoking cues ("attentional bias"). In this study, we investigated the effect of attentional retraining (AR) on attentional bias and smoking in African American smokers. Nontreatment- seeking African American smokers (N = 64) were randomly assigned to an AR or control condition. Participants were given a mobile device for 2 weeks and prompted to complete up to 3 AR (or control) trainings per day. Participants completed assessments of attentional bias, craving, and smoking both in the lab and in the field. Participants in the AR and control conditions completed an average of 29.07 AR (SD = 12.48) and 30.61 control training tasks (SD = 13.07), respectively. AR reduced attentional bias assessed in the laboratory, F(1, 126) = 9.20, p = .003, and field, F(1, 374) = 6.18, p = .01. This effect generalized to new stimuli, but not to new tasks. AR did not significantly reduce craving or biological measures of smoking. Smoking assessed on the mobile device declined over days in the AR group, F(1, 26) = 10.95, p = .003, but not in the control group, F(1, 27) = 0.02, p = .89. Two weeks of AR administered on a mobile device reduced attentional bias in African American smokers and had mixed effects on smoking. (PsycINFO Database Record (c) 2017 APA, all rights reserved).

Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers

DTIC Science & Technology

2015-02-01

to the electrical characterization of semiconductor materials. The Hall effect occurs when an electrical conductor is placed in a magnetic field...system. The TE11 mode is caused by the Hall effect when under an applied magnetic field. This effect rotates the TE10 mode 90° where the forward...conductivity tensors σxx and σxy, where σxx and σxy are functions of the magnetic field (H). The Hall coefficient (RH) for a given H is then

Scaling "Stackable Credentials": Implications for Implementation and Policy

ERIC Educational Resources Information Center

Ganzglass, Evelyn

2014-01-01

Postsecondary education and credentials are key to economic mobility for individuals and economic competitiveness for our nation. Although the economic return to credentials varies significantly by field of study, generally workers with higher levels of education have higher wages, work more hours, and suffer lower rates and shorter durations of…

Comprehensive review on the development of high mobility in oxide thin film transistors

NASA Astrophysics Data System (ADS)

Choi, Jun Young; Lee, Sang Yeol

2017-11-01

Oxide materials are one of the most advanced key technology in the thin film transistors (TFTs) for the high-end of device applications. Amorphous oxide semiconductors (AOSs) have leading technique for flat panel display (FPD), active matrix organic light emitting display (AMOLED) and active matrix liquid crystal display (AMLCD) due to their excellent electrical characteristics, such as field effect mobility ( μ FE ), subthreshold swing (S.S) and threshold voltage ( V th ). Covalent semiconductor like amorphous silicon (a-Si) is attributed to the anti-bonding and bonding states of Si hybridized orbitals. However, AOSs have not grain boundary and excellent performances originated from the unique characteristics of AOS which is the direct orbital overlap between s orbitals of neighboring metal cations. High mobility oxide TFTs have gained attractive attention during the last few years and today in display industries. It is progressively developed to increase the mobility either by exploring various oxide semiconductors or by adopting new TFT structures. Mobility of oxide thin film transistor has been rapidly increased from single digit to higher than 100 cm2/V·s in a decade. In this review, we discuss on the comprehensive review on the mobility of oxide TFTs in a decade and propose bandgap engineering and novel structure to enhance the electrical characteristics of oxide TFTs.

The Effects of Mobile-Computer-Supported Collaborative Learning: Meta-Analysis and Critical Synthesis

ERIC Educational Resources Information Center

Sung, Yao-Ting; Yang, Je-Ming; Lee, Han-Yueh

2017-01-01

One of the trends in collaborative learning is using mobile devices for supporting the process and products of collaboration, which has been forming the field of mobile-computer-supported collaborative learning (mCSCL). Although mobile devices have become valuable collaborative learning tools, evaluative evidence for their substantial…

Commissioning and field tests of a van-mounted system for the detection of radioactive sources and Special Nuclear Material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cester, D.; Lunardon, M.; Stevanato, L.

2015-07-01

MODES SNM project aimed to carry out technical research in order to develop a prototype for a mobile, modular detection system for radioactive sources and Special Nuclear Materials (SNM). Its main goal was to deliver a tested prototype of a modular mobile system capable of passively detecting weak or shielded radioactive sources with accuracy higher than that of currently available systems. By the end of the project all the objectives have been successfully achieved. Results from the laboratory commissioning and the field tests will be presented. (authors)

Synthesis of bilayer MoS2 and corresponding field effect characteristics

NASA Astrophysics Data System (ADS)

Fang, Mingxu; Feng, Yulin; Wang, Fang; Yang, Zhengchun; Zhang, Kailiang

2017-06-01

Two-dimensional transition-metal dichalcogenides such as MoS2 are promising materials for next-generation nano-electronic devices. The physical properties of MoS2 are determined by layer number according to the variation of band-gap. Here, we synthesize large-size bilayer-MoS2 with triangle and hexagonal nanosheets in one step by chemical vapor deposition, Monolayer and bilayer-MoS2 back-gate field effect transistors are also fabricated and the performance including mobility and on/off ratios are compared. The bilayer-MoS2 back-gate field effect transistor shows superior performance with field effect mobility of ∼21.27cm2V-1s-1, and Ion/Ioff ratio of ∼3.9×107.

Air-stable n-channel organic thin-film transistors with high field-effect mobility based on N ,N'-bis(heptafluorobutyl)-3,4:9,10-perylene diimide

NASA Astrophysics Data System (ADS)

Oh, Joon Hak; Liu, Shuhong; Bao, Zhenan; Schmidt, Rüdiger; Würthner, Frank

2007-11-01

The thin-film transistor characteristics of n-channel organic semiconductor, N ,N'-bis(2,2,3,3,4,4,4-heptafluorobutyl)-perylene tetracarboxylic diimide, are described. The slip-stacked face-to-face molecular packing allows a very dense parallel arrangement of the molecules, leading to field-effect mobility as high as 0.72cm2V-1s-1. The mobility only slightly decreased after exposure to air and remained stable for more than 50days. Our results reveal that molecular packing effects such as close stacking of perylene diimide units and segregation effects imparted by the fluorinated side chains are crucial for the air stability.

Field-testing of a cost-effective mobile-phone based microscope for screening of Schistosoma haematobium infection (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ceylan Koydemir, Hatice; Bogoch, Isaac I.; Tseng, Derek; Ephraim, Richard K. D.; Duah, Evans; Tee, Joseph; Andrews, Jason R.; Ozcan, Aydogan

2016-03-01

Schistosomiasis is a parasitic and neglected tropical disease, and affects <200-million people across the world, with school-aged children disproportionately affected. Here we present field-testing results of a handheld and cost effective smartphone-based microscope in rural Ghana, Africa, for point-of-care diagnosis of S. haematobium infection. In this mobile-phone microscope, a custom-designed 3D printed opto-mechanical attachment (~150g) is placed in contact with the smartphone camera-lens, creating an imaging-system with a half-pitch resolution of ~0.87µm. This unit includes an external lens (also taken from a mobile-phone camera), a sample tray, a z-stage to adjust the focus, two light-emitting-diodes (LEDs) and two diffusers for uniform illumination of the sample. In our field-testing, 60 urine samples, collected from children, were used, where the prevalence of the infection was 72.9%. After concentration of the sample with centrifugation, the sediment was placed on a glass-slide and S. haematobium eggs were first identified/quantified using conventional benchtop microscopy by an expert diagnostician, and then a second expert, blinded to these results, determined the presence/absence of eggs using our mobile-phone microscope. Compared to conventional microscopy, our mobile-phone microscope had a diagnostic sensitivity of 72.1%, specificity of 100%, positive-predictive-value of 100%, and a negative-predictive-value of 57.1%. Furthermore, our mobile-phone platform demonstrated a sensitivity of 65.7% and 100% for low-intensity infections (≤50 eggs/10 mL urine) and high-intensity infections (<50 eggs/10 mL urine), respectively. We believe that this cost-effective and field-portable mobile-phone microscope may play an important role in the diagnosis of schistosomiasis and various other global health challenges.

Research and application of mobile teaching platform

NASA Astrophysics Data System (ADS)

Yang, Ping; Xue, Hongjiao

2017-08-01

The application of mobile technology in university digital campus is ripe. This article mainly introduced the necessity of teaching platform based on mobile Internet in the teaching of higher vocational education, and the key to the construction of the feasibility of mobile learning platform, which is a feasible and effective teaching model under the new situation, worthy of promotion. The design and application of teaching platform based on mobile Internet is the change of educational ideas and working methods, and is the new starting point of Higher Vocational education.

Intravital Computer Morphometry on Protozoa: A Method for Monitoring of the Morphofunctional Disorders in Cells Exposed in the Cell Phone Communication Electromagnetic Field.

PubMed

Uskalova, D V; Igolkina, Yu V; Sarapultseva, E I

2016-08-01

Morphofunctional disorders in unicellular aquatic protozoa - Spirostomum ambiguum infusorians after 30-, 60-, and 360-min exposure in electromagnetic field at a radiation frequency of 1 GHz and energy flow density of 50 μW/cm(2) were analyzed by intravital computer morphometry. Significant disorders in morphometric values correlated with low mobility of the protozoa. The results suggested the use of intravital computer morphometry on the protozoa for early diagnosis of radiation-induced effects of the mobile communication electromagnetic field, for example, low mobility of spermatozoa.

A Framework for International Student Participation in Postsecondary U.S. English Language Programs

ERIC Educational Resources Information Center

Colón, Valeriana

2016-01-01

Postsecondary English language education is a growing field in the United States. While there has been considerable research on international student mobility in higher education, there is limited research on the population's participation in U.S. English language programs (ELPs). This study examined literature in related fields to create a…

Observation of Wigner crystal phase and ripplon-limited mobility behavior in monolayer CVD MoS2 with grain boundary.

PubMed

Chen, Jyun-Hong; Zhong, Yuan-Liang; Li, Lain-Jong; Chen, Chii-Dong

2018-06-01

Two-dimensional electron gas (2DEG) is crucial in condensed matter physics and is present on the surface of liquid helium and at the interface of semiconductors. Monolayer MoS 2 of 2D materials also contains 2DEG in an atomic layer as a field effect transistor (FET) ultrathin channel. In this study, we synthesized double triangular MoS 2 through a chemical vapor deposition method to obtain grain boundaries for forming a ripple structure in the FET channel. When the temperature was higher than approximately 175 K, the temperature dependence of the electron mobility μ was consistent with those in previous experiments and theoretical predictions. When the temperature was lower than approximately 175 K, the mobility behavior decreased with the temperature; this finding was also consistent with that of the previous experiments. We are the first research group to explain the decreasing mobility behavior by using the Wigner crystal phase and to discover the temperature independence of ripplon-limited mobility behavior at lower temperatures. Although these mobility behaviors have been studied on the surface of liquid helium through theories and experiments, they have not been previously analyzed in 2D materials and semiconductors. We are the first research group to report the similar temperature-dependent mobility behavior of the surface of liquid helium and the monolayer MoS 2 .

Mobile usage and sleep patterns among medical students.

PubMed

Yogesh, Saxena; Abha, Shrivastava; Priyanka, Singh

2014-01-01

Exposure of humans to radio frequency electromagnetic field (EMF) both during receiving and transmitting the signals has amplified public and scientific debate about possible adverse effects on human health. The study was designed with the objective of assessing the extent of mobile phone use amongst medical students and finding correlation if any between the hours of usage of mobile to sleep pattern and quality. hundred medical students grouped as cases (n = 57) (> 2 hours/day of mobile usage) and control (n = 43) (≤ 2 hours/day of mobile usage) were examined for their sleep quality & pattern by Pittsburg sleep Quality Index (PSQI). Differences between groups were examined with the Mann Whitney "U" test for proportions (Quantitative values) and with Student't' test for continuous variables. The association of variables was analyzed by Spearman Rank's correlation. Probability was set at < 0.05 as significant. Sleep disturbance, latency and day dysfunction was more in cases especially females. A significant association of hours of usage and sleep indices were observed in both genders (males r = 0.25; p = 0.04, females r = 0.31; p = 0.009). Evening usage of mobile phone in cases showed a statistically significant negative association (-0.606; p = 0.042) with Sleep quality (higher PSQI means sleep deprivation). Students using mobile for > 2 hours/day may cause sleep deprivation and day sleepiness affecting cognitive and learning abilities of medical students.

Observation of Wigner crystal phase and ripplon-limited mobility behavior in monolayer CVD MoS2 with grain boundary

NASA Astrophysics Data System (ADS)

Chen, Jyun-Hong; Zhong, Yuan-Liang; Li, Lain-Jong; Chen, Chii-Dong

2018-06-01

Two-dimensional electron gas (2DEG) is crucial in condensed matter physics and is present on the surface of liquid helium and at the interface of semiconductors. Monolayer MoS2 of 2D materials also contains 2DEG in an atomic layer as a field effect transistor (FET) ultrathin channel. In this study, we synthesized double triangular MoS2 through a chemical vapor deposition method to obtain grain boundaries for forming a ripple structure in the FET channel. When the temperature was higher than approximately 175 K, the temperature dependence of the electron mobility μ was consistent with those in previous experiments and theoretical predictions. When the temperature was lower than approximately 175 K, the mobility behavior decreased with the temperature; this finding was also consistent with that of the previous experiments. We are the first research group to explain the decreasing mobility behavior by using the Wigner crystal phase and to discover the temperature independence of ripplon-limited mobility behavior at lower temperatures. Although these mobility behaviors have been studied on the surface of liquid helium through theories and experiments, they have not been previously analyzed in 2D materials and semiconductors. We are the first research group to report the similar temperature-dependent mobility behavior of the surface of liquid helium and the monolayer MoS2.

Sensor Properties of Field-Effect Transistors Based on Graphene Oxide and Nafion Films with Proton Conductivity

NASA Astrophysics Data System (ADS)

Smirnov, V. A.; Mokrushin, A. D.; Denisov, N. N.; Dobrovolsky, Yu. A.

2018-07-01

The proton conductivity of graphene oxide (GO) and Nafion films was studied depending on the humidity and voltage on electrodes. The electric properties of the films were similar, but the mobility of positive charges in Nafion was approximately two orders of magnitude higher than in GO. In GO films, the negative ion current with a positive voltage bias was up to 10% of the proton current, while in Nafion films it was almost absent (<1%). The sensors based on GO and Nafion films were most effective at humidity (RH) in the range 20-80%.

Effects of Learning Styles and Interest on Concentration and Achievement of Students in Mobile Learning

ERIC Educational Resources Information Center

Li, Xiaojie; Yang, Xianmin

2016-01-01

Learning concentration deserves in-depth investigation in the field of mobile learning. Therefore, this study examined the interaction effects of learning styles and interest on the learning concentration and academic achievement of students who were asked to learn conceptual knowledge via their mobile phones in a classroom setting. A total of 92…

Multiphase mean curvature flows with high mobility contrasts: A phase-field approach, with applications to nanowires

NASA Astrophysics Data System (ADS)

Bretin, Elie; Danescu, Alexandre; Penuelas, José; Masnou, Simon

2018-07-01

The structure of many multiphase systems is governed by an energy that penalizes the area of interfaces between phases weighted by surface tension coefficients. However, interface evolution laws depend also on interface mobility coefficients. Having in mind some applications where highly contrasted or even degenerate mobilities are involved, for which classical phase field models are inapplicable, we propose a new effective phase field approach to approximate multiphase mean curvature flows with mobilities. The key aspect of our model is to incorporate the mobilities not in the phase field energy (which is conventionally the case) but in the metric which determines the gradient flow. We show the consistency of such an approach by a formal analysis of the sharp interface limit. We also propose an efficient numerical scheme which allows us to illustrate the advantages of the model on various examples, as the wetting of droplets on solid surfaces or the simulation of nanowires growth generated by the so-called vapor-liquid-solid method.

Mobile phones, radiofrequency fields, and health effects in children--epidemiological studies.

PubMed

Feychting, Maria

2011-12-01

In 2004, when WHO organized a workshop on children's sensitivity to electromagnetic fields, very few studies on radiofrequency fields were available. With the recent increase in mobile phone use among children and adolescents, WHO has identified studies on health effects in this age-group as a high priority research area. There are no empirical data supporting the notion that children and adolescents are more susceptible to RF exposure, but the number of studies is still relatively small. There are a few cross-sectional studies on well-being, cognitive effects and behavioral problems, and some cohort studies, mainly of maternal use of mobile phones during pregnancy. Cancer outcomes have been studied in relation to environmental RF exposure, e.g. from transmitters, and only one study on mobile phone use in children and adolescents and brain tumor risk has been published. Several methodological limitations need to be taken into consideration when interpreting the findings of the epidemiological studies. The cross-sectional design does not allow determination of the temporal sequence of exposure and outcome, and for several outcomes there is a large potential for reversed causality, i.e. that the outcome causes an increased RF exposure rather than the opposite. Biases such as recall errors in self-reported mobile phone use, lack of confounding control, e.g. of other aspects of mobile phone use than RF fields, trained behaviors, and pubertal development, makes causal interpretations impossible. Future studies need to include prospectively collected exposure information, incident outcomes, and proper confounding control. Monitoring of brain tumor incidence trends is strongly recommended. Copyright © 2011 Elsevier Ltd. All rights reserved.

Effect of prenatal exposure to mobile phone on pyramidal cell numbers in the mouse hippocampus: a stereological study.

PubMed

Rağbetli, Murat Cetin; Aydinlioğlu, Atif; Koyun, Necat; Rağbetli, Cennet; Karayel, Metin

2009-01-01

Because of the possible risk factor for the health, World Health Organization (WHO) recommended the study with animals on the developing nervous system concerning the exposure to radiofrequency (RF) field. A few studies related to hippocampal exposure are available, which indicate the impact of RF field in some parameters. The present study investigated the effect of exposure to mobile phone on developing hippocampus. Male and female Swiss albino mice were housed as control and mobile phone exposed groups. The pregnant animals in tested group were exposed to the effects of mobile phone in a room possessing the exposure system. The left hemispheres of the brains were processed by frozen microtome. The sections obtained were stained with Hematoxylin & Eosin. For cell counting by the optical fractionator method, a pilot study was first performed. Hippocampal areas were analyzed using Axiovision software running on a personal computer. The optical dissector, systematically and randomly spaced, was focused to the widest profile of the pyramidal cell nucleus. No significant difference in pyramidal cell number of total Cornu Ammonis (CA) sectors of hippocampus was found between the control and the mobile phone exposed groups (p > .05). It was concluded that further study is needed in this field due to popular use of mobile telephones and relatively high exposure to the developing brain.

Ultraviolet-B radiation mobilizes uranium from uranium-dissolved organic carbon complexes in aquatic systems, demonstrated by asymmetrical flow field-flow fractionation.

PubMed

Nehete, Sachin Vilas; Christensen, Terje; Salbu, Brit; Teien, Hans-Christian

2017-05-05

Humic substances have a tendency to form complexes with metal ions in aquatic medium, impacting the metal mobility, decreasing bioavailability and toxicity. Ultraviolet-B (UV-B) radiation exposure degrades the humic substance, changes their molecular weight distribution and their metal binding capacity in aquatic medium. In this study, we experimented the effect of UV-B radiation on the uranium complexed with fulvic acids and humic acids in a soft water system at different pH, uranium concentrations and radiant exposure. The concentration and distribution of uranium in a complexed form were investigated by asymmetrical flow field-flow fractionation coupled to multi detection technique (AsFlFFF-UV-ICP-MS). The major concentration of uranium present in complexes was primarily associated with average and higher molecular weight fulvic and humic acids components. The concentration of uranium in a complexed form increased with increasing fulvic and humic acid concentrations as well as pH of the solution. The higher molecular weight fraction of uranium was degraded due to the UV-B exposure, transforming about 50% of the uranium-dissolved organic carbon complexes into low molecular weight uranium species in complex form with organic ligands and/or free form. The result also suggests AsFlFFF-UV-ICP-MS to be an important separation and detection technique for understanding the interaction of radionuclides with dissolved organic matter, tracking size distribution changes during degradation of organic complexes for understanding mobility, bioavailability and ecosystem transfer of radionuclides as well as metals. Copyright © 2017 Elsevier B.V. All rights reserved.

A possible effect of electromagnetic radiation from mobile phone base stations on the number of breeding house sparrows (Passer domesticus).

PubMed

Everaert, Joris; Bauwens, Dirk

2007-01-01

A possible effect of long-term exposure to low-intensity electromagnetic radiation from mobile phone (GSM) base stations on the number of House Sparrows during the breeding season was studied in six residential districts in Belgium. We sampled 150 point locations within the 6 areas to examine small-scale geographic variation in the number of House Sparrow males and the strength of electromagnetic radiation from base stations. Spatial variation in the number of House Sparrow males was negatively and highly significantly related to the strength of electric fields from both the 900 and 1800 MHz downlink frequency bands and from the sum of these bands (Chi(2)-tests and AIC-criteria, P<0.001). This negative relationship was highly similar within each of the six study areas, despite differences among areas in both the number of birds and radiation levels. Thus, our data show that fewer House Sparrow males were seen at locations with relatively high electric field strength values of GSM base stations and therefore support the notion that long-term exposure to higher levels of radiation negatively affects the abundance or behavior of House Sparrows in the wild.

Numerical simulation of offset-drain amorphous oxide-based thin-film transistors

NASA Astrophysics Data System (ADS)

Jeong, Jaewook

2016-11-01

In this study, we analyzed the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with an offset-drain structure by technology computer aided design (TCAD) simulation. When operating in a linear region, an enhancement-type TFT shows poor field-effect mobility because most conduction electrons are trapped in acceptor-like defects in an offset region when the offset length (L off) exceeds 0.5 µm, whereas a depletion-type TFT shows superior field-effect mobility owing to the high free electron density in the offset region compared with the trapped electron density. When operating in the saturation region, both types of TFTs show good field-effect mobility comparable to that of a reference TFT with a large gate overlap. The underlying physics of the depletion and enhancement types of offset-drain TFTs are systematically analyzed.

Vacuum-processed polyethylene as a dielectric for low operating voltage organic field effect transistors

PubMed Central

Kanbur, Yasin; Irimia-Vladu, Mihai; Głowacki, Eric D.; Voss, Gundula; Baumgartner, Melanie; Schwabegger, Günther; Leonat, Lucia; Ullah, Mujeeb; Sarica, Hizir; Erten-Ela, Sule; Schwödiauer, Reinhard; Sitter, Helmut; Küçükyavuz, Zuhal; Bauer, Siegfried; Sariciftci, Niyazi Serdar

2012-01-01

We report on the fabrication and performance of vacuum-processed organic field effect transistors utilizing evaporated low-density polyethylene (LD-PE) as a dielectric layer. With C60 as the organic semiconductor, we demonstrate low operating voltage transistors with field effect mobilities in excess of 4 cm2/Vs. Devices with pentacene showed a mobility of 0.16 cm2/Vs. Devices using tyrian Purple as semiconductor show low-voltage ambipolar operation with equal electron and hole mobilities of ∼0.3 cm2/Vs. These devices demonstrate low hysteresis and operational stability over at least several months. Grazing-angle infrared spectroscopy of evaporated thin films shows that the structure of the polyethylene is similar to solution-cast films. We report also on the morphological and dielectric properties of these films. Our experiments demonstrate that polyethylene is a stable dielectric supporting both hole and electron channels. PMID:23483783

Effect of Mobile Phone-Induced Electromagnetic Field on Brain Hemodynamics and Human Stem Cell Functioning: Possible Mechanistic Link to Cancer Risk and Early Diagnostic Value of Electronphotonic Imaging.

PubMed

Bhargav, Hemant; Srinivasan, T M; Varambally, S; Gangadhar, B N; Koka, Prasad

2015-01-01

The mobile phones (MP) are low power radio devices which work on electromagnetic fields (EMFs), in the frequency range of 900-1800 MHz. Exposure to MPEMFs may affect brain physiology and lead to various health hazards including brain tumors. Earlier studies with positron emission tomography (PET) have found alterations in cerebral blood flow (CBF) after acute exposure to MPEMFs. It is widely accepted that DNA double-strand breaks (DSBs) and their misrepair in stem cells are critical events in the multistage origination of various leukemia and tumors, including brain tumors such as gliomas. Both significant misbalance in DSB repair and severe stress response have been triggered by MPEMFs and EMFs from cell towers. It has been shown that stem cells are most sensitive to microwave exposure and react to more frequencies than do differentiated cells. This may be important for cancer risk assessment and indicates that stem cells are the most relevant cellular model for validating safe mobile communication signals. Recently developed technology for recording the human bio-electromagnetic (BEM) field using Electron photonic Imaging (EPI) or Gas Discharge Visualisation (GDV) technique provides useful information about the human BEM. Studies have recorded acute effects of Mobile Phone Electromagnetic Fields (MPEMFs) using EPI and found quantifiable effects on human BEM field. Present manuscript reviews evidences of altered brain physiology and stem cell functioning due to mobile phone/cell tower radiations, its association with increased cancer risk and explores early diagnostic value of EPI imaging in detecting EMF induced changes on human BEM.

Ultrafast high-power microwave window breakdown: nonlinear and postpulse effects.

PubMed

Chang, C; Verboncoeur, J; Guo, M N; Zhu, M; Song, W; Li, S; Chen, C H; Bai, X C; Xie, J L

2014-12-01

The time- and space-dependent optical emissions of nanosecond high-power microwave discharges near a dielectric-air interface have been observed by nanosecond-response four-framing intensified-charged-coupled device cameras. The experimental observations indicate that plasma developed more intensely at the dielectric-air interface than at the free-space region with a higher electric-field amplitude. A thin layer of intense light emission above the dielectric was observed after the microwave pulse. The mechanisms of the breakdown phenomena are analyzed by a three-dimensional electromagnetic-field modeling and a two-dimensional electromagnetic particle-in-cell simulation, revealing the formation of a space-charge microwave sheath near the dielectric surface, accelerated by the normal components of the microwave field, significantly enhancing the local-field amplitude and hence ionization near the dielectric surface. The nonlinear positive feedback of ionization, higher electron mobility, and ultraviolet-driven photoemission due to the elevated electron temperature are crucial for achieving the ultrafast discharge. Following the high-power microwave pulse, the sheath sustains a glow discharge until the sheath collapses.

Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory via Buffering Interfacial Polarization Fluctuation

PubMed Central

Sun, Huabin; Wang, Qijing; Li, Yun; Lin, Yen-Fu; Wang, Yu; Yin, Yao; Xu, Yong; Liu, Chuan; Tsukagoshi, Kazuhito; Pan, Lijia; Wang, Xizhang; Hu, Zheng; Shi, Yi

2014-01-01

Ferroelectric organic field-effect transistors (Fe-OFETs) have been attractive for a variety of non-volatile memory device applications. One of the critical issues of Fe-OFETs is the improvement of carrier mobility in semiconducting channels. In this article, we propose a novel interfacial buffering method that inserts an ultrathin poly(methyl methacrylate) (PMMA) between ferroelectric polymer and organic semiconductor layers. A high field-effect mobility (μFET) up to 4.6 cm2 V−1 s−1 is obtained. Subsequently, the programming process in our Fe-OFETs is mainly dominated by the switching between two ferroelectric polarizations rather than by the mobility-determined charge accumulation at the channel. Thus, the “reading” and “programming” speeds are significantly improved. Investigations show that the polarization fluctuation at semiconductor/insulator interfaces, which affect the charge transport in conducting channels, can be suppressed effectively using our method. PMID:25428665

Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistor and Its RF Power Efficiency Optimization with Source-Bridged Field-Plate Structure.

PubMed

Kwak, Hyeon-Tak; Chang, Seung-Bo; Jung, Hyun-Gu; Kim, Hyun-Seok

2018-09-01

In this study, we consider the relationship between the temperature in a two-dimensional electron gas (2-DEG) channel layer and the RF characteristics of an AlGaN/GaN high-electron-mobility transistor by changing the geometrical structure of the field-plate. The final goal is to achieve a high power efficiency by decreasing the channel layer temperature. First, simulations were performed to compare and contrast the experimental data of a conventional T-gate head structure. Then, a source-bridged field-plate (SBFP) structure was used to obtain the lower junction temperature in the 2-DEG channel layer. The peak electric field intensity was reduced, and a decrease in channel temperature resulted in an increase in electron mobility. Furthermore, the gate-to-source capacitance was increased by the SBFP structure. However, under the large current flow condition, the SBFP structure had a lower maximum temperature than the basic T-gate head structure, which improved the device electron mobility. Eventually, an optimum position of the SBFP was used, which led to higher frequency responses and improved the breakdown voltages. Hence, the optimized SBFP structure can be a promising candidate for high-power RF devices.

Are people living next to mobile phone base stations more strained? Relationship of health concerns, self-estimated distance to base station, and psychological parameters.

PubMed

Augner, Christoph; Hacker, Gerhard W

2009-12-01

Coeval with the expansion of mobile phone technology and the associated obvious presence of mobile phone base stations, some people living close to these masts reported symptoms they attributed to electromagnetic fields (EMF). Public and scientific discussions arose with regard to whether these symptoms were due to EMF or were nocebo effects. The aim of this study was to find out if people who believe that they live close to base stations show psychological or psychobiological differences that would indicate more strain or stress. Furthermore, we wanted to detect the relevant connections linking self-estimated distance between home and the next mobile phone base station (DBS), daily use of mobile phone (MPU), EMF-health concerns, electromagnetic hypersensitivity, and psychological strain parameters. Fifty-seven participants completed standardized and non-standardized questionnaires that focused on the relevant parameters. In addition, saliva samples were used as an indication to determine the psychobiological strain by concentration of alpha-amylase, cortisol, immunoglobulin A (IgA), and substance P. Self-declared base station neighbors (DBS

Differential Ion Mobility Separations in up to 100 % Helium Using Microchips

PubMed Central

Shvartsburg, Alexandre A.; Ibrahim, Yehia M.; Smith, Richard D.

2014-01-01

The performance of differential IMS (FAIMS) analyzers is much enhanced by gases comprising He, especially He/N2 mixtures. However, electrical breakdown has limited the He fraction to ~50 %–75 %, depending on the field strength. By the Paschen law, the threshold field for breakdown increases at shorter distances. This allows FAIMS using chips with microscopic channels to utilize much stronger field intensities (E) than “full-size” analyzers with wider gaps. Here we show that those chips can employ higher He fractions up to 100 %. Use of He-rich gases improves the resolution and resolution/sensitivity balance substantially, although less than for full-size analyzers. The optimum He fraction is ~80 %, in line with first-principles theory. Hence, one can now measure the dependences of ion mobility on E in pure He, where ion-molecule cross section calculations are much more tractable than in other gases that form deeper and more complex interaction potentials. This capability may facilitate quantitative modeling of high-field ion mobility behavior and, thus, FAIMS separation properties, which would enable a priori extraction of structural information about the ions. PMID:24402673

Transport properties of field-effect transistor with Langmuir-Blodgett films of C60 dendrimer and estimation of impurity levels

NASA Astrophysics Data System (ADS)

Kawasaki, Naoko; Nagano, Takayuki; Kubozono, Yoshihiro; Sako, Yuuki; Morimoto, Yu; Takaguchi, Yutaka; Fujiwara, Akihiko; Chu, Chih-Chien; Imae, Toyoko

2007-12-01

Field-effect transistor (FET) device has been fabricated with Langmuir-Blodgett films of C60 dendrimer. The device showed n-channel normally off characteristics with the field-effect mobility of 2.7×10-3cm2V-1s-1 at 300K, whose value is twice as high as that (1.4×10-3cm2V-1s-1) for the FET with spin-coated films of C60 dendrimer. This originates from the formation of ordered π-conduction network of C60 moieties. From the temperature dependence of field-effect mobility, a structural phase transition has been observed at around 300K. Furthermore, the density of states for impurity levels was estimated in the Langmuir-Blodgett films.

Mobile phone tools for field-based health care workers in low-income countries.

PubMed

Derenzi, Brian; Borriello, Gaetano; Jackson, Jonathan; Kumar, Vikram S; Parikh, Tapan S; Virk, Pushwaz; Lesh, Neal

2011-01-01

In low-income regions, mobile phone-based tools can improve the scope and efficiency of field health workers. They can also address challenges in monitoring and supervising a large number of geographically distributed health workers. Several tools have been built and deployed in the field, but little comparison has been done to help understand their effectiveness. This is largely because no framework exists in which to analyze the different ways in which the tools help strengthen existing health systems. In this article we highlight 6 key functions that health systems currently perform where mobile tools can provide the most benefit. Using these 6 health system functions, we compare existing applications for community health workers, an important class of field health workers who use these technologies, and discuss common challenges and lessons learned about deploying mobile tools. © 2011 Mount Sinai School of Medicine.

Current-voltage characteristics in organic field-effect transistors. Effect of interface dipoles

NASA Astrophysics Data System (ADS)

Sworakowski, Juliusz

2015-07-01

The role of polar molecules present at dielectric/semiconductor interfaces of organic field-effect transistors (OFETs) has been assessed employing the electrostatic model put forward in a recently published paper (Sworakowski et al., 2014). The interface dipoles create dipolar traps in the surface region of the semiconductor, their depths decreasing with the distance from the interface. This feature results in appearance of mobility gradients in the direction perpendicular to the dielectric/semiconductor interface, manifesting themselves in modification of the shapes of current-voltage characteristics. The effect may account for differences in carrier mobilities determined from the same experimental data using methods scanning different ranges of channel thicknesses (e.g., transconductances vs. transfer characteristics), differences between turn-on voltages and threshold voltages, and gate voltage dependence of mobility.

Intraoperative observation of changes in cochlear nerve action potentials during exposure to electromagnetic fields generated by mobile phones.

PubMed

Colletti, Vittorio; Mandalà, Marco; Manganotti, Paolo; Ramat, Stefano; Sacchetto, Luca; Colletti, Liliana

2011-07-01

The rapid spread of devices generating electromagnetic fields (EMF) has raised concerns as to the possible effects of this technology on humans. The auditory system is the neural organ most frequently and directly exposed to electromagnetic activity owing to the daily use of mobile phones. In recent publications, a possible correlation between mobile phone usage and central nervous system tumours has been detected. Very recently a deterioration in otoacoustic emissions and in the auditory middle latency responses after intensive and long-term magnetic field exposure in humans has been demonstrated. To determine with objective observations if exposure to mobile phone EMF affects acoustically evoked cochlear nerve compound action potentials, seven patients suffering from Ménière's disease and undergoing retrosigmoid vestibular neurectomy were exposed to the effects of mobile phone placed over the craniotomy for 5 min. All patients showed a substantial decrease in amplitude and a significant increase in latency of cochlear nerve compound action potentials during the 5 min of exposure to EMF. These changes lasted for a period of around 5 min after exposure. The possibility that EMF can produce relatively long-lasting effects on cochlear nerve conduction is discussed and analysed in light of contrasting previous literature obtained under non-surgical conditions. Limitations of this novel approach, including the effects of the anaesthetics, craniotomy and surgical procedure, are presented in detail.

Grand Canyon as a universally accessible virtual field trip for intro Geoscience classes using geo-referenced mobile game technology

NASA Astrophysics Data System (ADS)

Bursztyn, N.; Pederson, J. L.; Shelton, B.

2012-12-01

There is a well-documented and nationally reported trend of declining interest, poor preparedness, and lack of diversity within U.S. students pursuing geoscience and other STEM disciplines. We suggest that a primary contributing factor to this problem is that introductory geoscience courses simply fail to inspire (i.e. they are boring). Our experience leads us to believe that the hands-on, contextualized learning of field excursions are often the most impactful component of lower division geoscience classes. However, field trips are becoming increasingly more difficult to run due to logistics and liability, high-enrollments, decreasing financial and administrative support, and exclusivity of the physically disabled. Recent research suggests that virtual field trips can be used to simulate this contextualized physical learning through the use of mobile devices - technology that exists in most students' hands already. Our overarching goal is to enhance interest in introductory geoscience courses by providing the kinetic and physical learning experience of field trips through geo-referenced educational mobile games and test the hypothesis that these experiences can be effectively simulated through virtual field trips. We are doing this by developing "serious" games for mobile devices that deliver introductory geology material in a fun and interactive manner. Our new teaching strategy will enhance undergraduate student learning in the geosciences, be accessible to students of diverse backgrounds and physical abilities, and be easily incorporated into higher education programs and curricula at institutions globally. Our prototype involves students virtually navigating downstream along a scaled down Colorado River through Grand Canyon - physically moving around their campus quad, football field or other real location, using their smart phone or a tablet. As students reach the next designated location, a photo or video in Grand Canyon appears along with a geological question. The students must answer each question correctly in order to proceed to the next location and accrue points in the game and multiple attempts reduce the number of points earned when the correct answer is found. The questions are either multiple choice or involve touch-screen interaction to identify a specific geologic feature. Initial testing of the prototype game in Historical and Physical geology courses at Utah State University indicate that students enjoy the mobile "exploration" nature of the game as well as experiencing photographs of geologic features rather than traditional cartoons. Qualitative evaluation using anonymous surveys was conducted to help determine the usability of the game and the potential effectiveness of this technology-based approach. Students were asked about the degree of fun and difficulty of the game, content learned, and their overall response to features they liked/disliked about it. The results of these early assessments are positive, both in regard to the improvement of students' understanding of key geology concepts and their enjoyment of learning with the technology in a mobile orienteering manner. This is a positive first step in an innovative teaching tool with the power to overcome the pervasive problem of the boring first year STEM course and make world-class field trips accessible to all.

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

PubMed Central

Tian, He; Tan, Zhen; Wu, Can; Wang, Xiaomu; Mohammad, Mohammad Ali; Xie, Dan; Yang, Yi; Wang, Jing; Li, Lain-Jong; Xu, Jun; Ren, Tian-Ling

2014-01-01

Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5–20 cm2/V·s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V·s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics. PMID:25109609

Enhanced regeneration potential of mobilized dental pulp stem cells from immature teeth.

PubMed

Nakayama, H; Iohara, K; Hayashi, Y; Okuwa, Y; Kurita, K; Nakashima, M

2017-07-01

We have previously demonstrated that dental pulp stem cells (DPSCs) isolated from mature teeth by granulocyte colony-stimulating factor (G-CSF)-induced mobilization method can enhance angiogenesis/vasculogenesis and improve pulp regeneration when compared with colony-derived DPSCs. However, the efficacy of this method in immature teeth with root-formative stage has never been investigated. Therefore, the aim of this study was to examine the stemness, biological characteristics, and regeneration potential in mobilized DPSCs compared with colony-derived DPSCs from immature teeth. Mobilized DPSCs isolated from immature teeth were compared to colony-derived DPSCs using methods including flow cytometry, migration assays, mRNA expression of angiogenic/neurotrophic factor, and induced differentiation assays. They were also compared in trophic effects of the secretome. Regeneration potential was further compared in an ectopic tooth transplantation model. Mobilized DPSCs had higher migration ability and expressed more angiogenic/neurotrophic factors than DPSCs. The mobilized DPSC secretome produced a higher stimulatory effect on migration, immunomodulation, anti-apoptosis, endothelial differentiation, and neurite extension. In addition, vascularization and pulp regeneration potential were higher in mobilized DPSCs than in DPSCs. G-CSF-induced mobilization method enhances regeneration potential of colony-derived DPSCs from immature teeth. © 2016 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

The Impact of Mobile Technologies on Distance Education

ERIC Educational Resources Information Center

Fuegen, Shauna'h

2012-01-01

This article considers the growing amount of research on using mobile technologies in education. As mobile devices become increasingly more prevalent, it is imperative to study their use and effect on the growing field of distance education. This brief review of existing literature indicates that traditional theories of learning, in both…

Gene and Protein Expression following Exposure to Radiofrequency Fields from Mobile Phones

PubMed Central

Vanderstraeten, Jacques; Verschaeve, Luc

2008-01-01

Background Since 1999, several articles have been published on genome-wide and/or proteome-wide response after exposure to radiofrequency (RF) fields whose signal and intensities were similar to or typical of those of currently used mobile telephones. These studies were performed using powerful high-throughput screening techniques (HTSTs) of transcriptomics and/or proteomics, which allow for the simultaneous screening of the expression of thousands of genes or proteins. Objectives We reviewed these HTST-based studies and compared the results with currently accepted concepts about the effects of RF fields on gene expression. In this article we also discuss these last in light of the recent concept of microwave-assisted chemistry. Discussion To date, the results of HTST-based studies of transcriptomics and/or proteomics after exposure to RF fields relevant to human exposure are still inconclusive, as most of the positive reports are flawed by methodologic imperfections or shortcomings. In addition, when positive findings were reported, no precise response pattern could be identified in a reproducible way. In particular, results from HTST studies tend to exclude the role of a cell stressor for exposure to RF fields at nonthermal intensities. However, on the basis of lessons from microwave-assisted chemistry, we can assume that RF fields might affect heat-sensitive gene or protein expression to an extent larger than would be predicted from temperature change only. But in all likelihood, this would concern intensities higher than those relevant to usual human exposure. Conclusions The precise role of transcriptomics and proteomics in the screening of bioeffects from exposure to RF fields from mobile phones is still uncertain in view of the lack of positively identified phenotypic change and the lack of theoretical, as well as experimental, arguments for specific gene and/or protein response patterns after this kind of exposure. PMID:18795152

Mobile Phone Chips Reduce Increases in EEG Brain Activity Induced by Mobile Phone-Emitted Electromagnetic Fields.

PubMed

Henz, Diana; Schöllhorn, Wolfgang I; Poeggeler, Burkhard

2018-01-01

Recent neurophysiological studies indicate that exposure to electromagnetic fields (EMFs) generated by mobile phone radiation can exert effects on brain activity. One technical solution to reduce effects of EMFs in mobile phone use is provided in mobile phone chips that are applied to mobile phones or attached to their surfaces. To date, there are no systematical studies on the effects of mobile phone chip application on brain activity and the underlying neural mechanisms. The present study investigated whether mobile phone chips that are applied to mobile phones reduce effects of EMFs emitted by mobile phone radiation on electroencephalographic (EEG) brain activity in a laboratory study. Thirty participants volunteered in the present study. Experimental conditions (mobile phone chip, placebo chip, no chip) were set up in a randomized within-subjects design. Spontaneous EEG was recorded before and after mobile phone exposure for two 2-min sequences at resting conditions. During mobile phone exposure, spontaneous EEG was recorded for 30 min during resting conditions, and 5 min during performance of an attention test (d2-R). Results showed increased activity in the theta, alpha, beta and gamma bands during EMF exposure in the placebo and no chip conditions. Application of the mobile phone chip reduced effects of EMFs on EEG brain activity and attentional performance significantly. Attentional performance level was maintained regarding number of edited characters. Further, a dipole analysis revealed different underlying activation patterns in the chip condition compared to the placebo chip and no chip conditions. Finally, a correlational analysis for the EEG frequency bands and electromagnetic high-frequency (HF) emission showed significant correlations in the placebo chip and no chip condition for the theta, alpha, beta, and gamma bands. In the chip condition, a significant correlation of HF with the theta and alpha bands, but not with the beta and gamma bands was shown. We hypothesize that a reduction of EEG beta and gamma activation constitutes the key neural mechanism in mobile phone chip use that supports the brain to a degree in maintaining its natural activity and performance level during mobile phone use.

Mobile Phone Chips Reduce Increases in EEG Brain Activity Induced by Mobile Phone-Emitted Electromagnetic Fields

PubMed Central

Henz, Diana; Schöllhorn, Wolfgang I.; Poeggeler, Burkhard

2018-01-01

Recent neurophysiological studies indicate that exposure to electromagnetic fields (EMFs) generated by mobile phone radiation can exert effects on brain activity. One technical solution to reduce effects of EMFs in mobile phone use is provided in mobile phone chips that are applied to mobile phones or attached to their surfaces. To date, there are no systematical studies on the effects of mobile phone chip application on brain activity and the underlying neural mechanisms. The present study investigated whether mobile phone chips that are applied to mobile phones reduce effects of EMFs emitted by mobile phone radiation on electroencephalographic (EEG) brain activity in a laboratory study. Thirty participants volunteered in the present study. Experimental conditions (mobile phone chip, placebo chip, no chip) were set up in a randomized within-subjects design. Spontaneous EEG was recorded before and after mobile phone exposure for two 2-min sequences at resting conditions. During mobile phone exposure, spontaneous EEG was recorded for 30 min during resting conditions, and 5 min during performance of an attention test (d2-R). Results showed increased activity in the theta, alpha, beta and gamma bands during EMF exposure in the placebo and no chip conditions. Application of the mobile phone chip reduced effects of EMFs on EEG brain activity and attentional performance significantly. Attentional performance level was maintained regarding number of edited characters. Further, a dipole analysis revealed different underlying activation patterns in the chip condition compared to the placebo chip and no chip conditions. Finally, a correlational analysis for the EEG frequency bands and electromagnetic high-frequency (HF) emission showed significant correlations in the placebo chip and no chip condition for the theta, alpha, beta, and gamma bands. In the chip condition, a significant correlation of HF with the theta and alpha bands, but not with the beta and gamma bands was shown. We hypothesize that a reduction of EEG beta and gamma activation constitutes the key neural mechanism in mobile phone chip use that supports the brain to a degree in maintaining its natural activity and performance level during mobile phone use. PMID:29670503

Correlating Resolving Power, Resolution, and Collision Cross Section: Unifying Cross-Platform Assessment of Separation Efficiency in Ion Mobility Spectrometry.

PubMed

Dodds, James N; May, Jody C; McLean, John A

2017-11-21

Here we examine the relationship among resolving power (R p ), resolution (R pp ), and collision cross section (CCS) for compounds analyzed in previous ion mobility (IM) experiments representing a wide variety of instrument platforms and IM techniques. Our previous work indicated these three variables effectively describe and predict separation efficiency for drift tube ion mobility spectrometry experiments. In this work, we seek to determine if our previous findings are a general reflection of IM behavior that can be applied to various instrument platforms and mobility techniques. Results suggest IM distributions are well characterized by a Gaussian model and separation efficiency can be predicted on the basis of the empirical difference in the gas-phase CCS and a CCS-based resolving power definition (CCS/ΔCCS). Notably traveling wave (TWIMS) was found to operate at resolutions substantially higher than a single-peak resolving power suggested. When a CCS-based R p definition was utilized, TWIMS was found to operate at a resolving power between 40 and 50, confirming the previous observations by Giles and co-workers. After the separation axis (and corresponding resolving power) is converted to cross section space, it is possible to effectively predict separation behavior for all mobility techniques evaluated (i.e., uniform field, trapped ion mobility, traveling wave, cyclic, and overtone instruments) using the equations described in this work. Finally, we are able to establish for the first time that the current state-of-the-art ion mobility separations benchmark at a CCS-based resolving power of >300 that is sufficient to differentiate analyte ions with CCS differences as small as 0.5%.

Technological Education for Women as a Tool of Upward Social Mobility, with Reference to the Middle East.

ERIC Educational Resources Information Center

Nashif, Taysir

Technological education is more effective than general education in improving social mobility. Remarkable gender disparities currently exist in overall enrollment in secondary and higher education in the Arab states. Encouraging more Arab women to enroll in technological education would lead to higher percentages of women in higher-paying jobs,…

Development of a Telemetry and Yield-Mapping System of Olive Harvester

PubMed Central

Castillo-Ruiz, Francisco J.; Pérez-Ruiz, Manuel; Blanco-Roldán, Gregorio L.; Gil-Ribes, Jesús A.; Agüera, Juan

2015-01-01

Sensors, communication systems and geo-reference units are required to achieve an optimized management of agricultural inputs with respect to the economic and environmental aspects of olive groves. In this study, three commercial olive harvesters were tracked during two harvesting seasons in Spain and Chile using remote and autonomous equipment that was developed to determine their time efficiency and effective based on canopy shaking for fruit detachment. These harvesters work in intensive/high-density (HD) and super-high-density (SHD) olive orchards. A GNSS (Global Navigation Satellite System) and GSM (Global System for Mobile Communications) device was installed to track these harvesters. The GNSS receiver did not affect the driver’s work schedule. Time elements methodology was adapted to the remote data acquisition system. The effective field capacity and field efficiency were investigated. In addition, the field shape, row length, angle between headland alley and row, and row alley width were measured to determinate the optimum orchard design parameters value. The SHD olive harvester showed significant lower effective field capacity values when alley width was less than 4 m. In addition, a yield monitor was developed and installed on a traditional olive harvester to obtain a yield map from the harvested area. The hedge straddle harvester stood out for its highly effective field capacity; nevertheless, a higher field efficiency was provided by a non-integral lateral canopy shaker. All of the measured orchard parameters have influenced machinery yields, whether effective field capacity or field efficiency. A saving of 40% in effective field capacity was achieved with a reduction from 4 m or higher to 3.5 m in alley width for SHD olive harvester. A yield map was plotted using data that were acquired by a yield monitor, reflecting the yield gradient in spite of the larger differences between tree yields. PMID:25675283

Characterization of personal RF electromagnetic field exposure and actual absorption for the general public.

PubMed

Joseph, W; Vermeeren, G; Verloock, L; Heredia, Mauricio Masache; Martens, Luc

2008-09-01

In this paper, personal electromagnetic field exposure of the general public due to 12 different radiofrequency sources is characterized. Twenty-eight different realistic exposure scenarios based upon time, environment, activity, and location have been defined and a relevant number of measurements were performed with a personal exposure meter. Indoor exposure in office environments can be higher than outdoor exposure: 95th percentiles of field values due to WiFi ranged from 0.36 to 0.58 V m(-1), and for DECT values of 0.33 V m(-1) were measured. The downlink signals of GSM and DCS caused the highest outdoor exposures up to 0.52 V m(-1). The highest total field exposure occurred for mobile scenarios (inside a train or bus) from uplink signals of GSM and DCS (e.g., mobile phones) due to changing environmental conditions, handovers, and higher required transmitted signals from mobile phones due to penetration through windows while moving. A method to relate the exposure to the actual whole-body absorption in the human body is proposed. An application is shown where the actual absorption in a human body model due to a GSM downlink signal is determined. Fiftieth, 95th, and 99 th percentiles of the whole-body specific absorption rate (SAR) due to this GSM signal of 0.58 microW kg(-1), 2.08 microW kg(-1), and 5.01 microW kg(-1) are obtained for a 95th percentile of 0.26 V m(-1). A practical usable function is proposed for the relation between the whole-body SAR and the electric fields. The methodology of this paper enables epidemiological studies to make an analysis in combination with both electric field and actual whole-body SAR values and to compare exposure with basic restrictions.

Charge transport and trapping in organic field effect transistors exposed to polar analytes

NASA Astrophysics Data System (ADS)

Duarte, Davianne; Sharma, Deepak; Cobb, Brian; Dodabalapur, Ananth

2011-03-01

Pentacene based organic thin-film transistors were used to study the effects of polar analytes on charge transport and trapping behavior during vapor sensing. Three sets of devices with differing morphology and mobility (0.001-0.5 cm2/V s) were employed. All devices show enhanced trapping upon exposure to analyte molecules. The organic field effect transistors with different mobilities also provide evidence for morphology dependent partition coefficients. This study helps provide a physical basis for many reports on organic transistor based sensor response.

Impact of one's own mobile phone in stand-by mode on personal radiofrequency electromagnetic field exposure.

PubMed

Urbinello, Damiano; Röösli, Martin

2013-01-01

When moving around, mobile phones in stand-by mode periodically send data about their positions. The aim of this paper is to evaluate how personal radiofrequency electromagnetic field (RF-EMF) measurements are affected by such location updates. Exposure from a mobile phone handset (uplink) was measured during commuting by using a randomized cross-over study with three different scenarios: disabled mobile phone (reference), an activated dual-band phone and a quad-band phone. In the reference scenario, uplink exposure was highest during train rides (1.19 mW/m(2)) and lowest during car rides in rural areas (0.001 mW/m(2)). In public transports, the impact of one's own mobile phone on personal RF-EMF measurements was not observable because of high background uplink radiation from other people's mobile phone. In a car, uplink exposure with an activated phone was orders of magnitude higher compared with the reference scenario. This study demonstrates that personal RF-EMF exposure is affected by one's own mobile phone in stand-by mode because of its regular location update. Further dosimetric studies should quantify the contribution of location updates to the total RF-EMF exposure in order to clarify whether the duration of mobile phone use, the most common exposure surrogate in the epidemiological RF-EMF research, is actually an adequate exposure proxy.

Patient mobility and health care quality when regions and patients differ in income.

PubMed

Brekke, Kurt R; Levaggi, Rosella; Siciliani, Luigi; Straume, Odd Rune

2016-12-01

We study the effects of cross-border patient mobility on health care quality and welfare when income varies across and within regions. We use a Salop model with a high-, middle-, and low-income region. In each region, a policy maker chooses health care quality to maximise the utility of its residents when health care costs are financed by general income taxation. In equilibrium, regions with higher income offer better quality, which creates an incentive for patient mobility from lower- to higher-income regions. Assuming a prospective payment scheme based on DRG-pricing, we find that lower non-monetary (administrative) mobility costs have (i) no effect on quality or welfare in the high-income region; (ii) a negative effect on quality but a positive effect on welfare for the middle-income region; and (iii) ambiguous effects on quality and welfare for the low-income region. Lower monetary mobility costs (copayments) might reduce welfare in both the middle- and low-income region. Thus, health policies that stimulate cross-border patient mobility can be counterproductive when regions differ in income. Copyright © 2016 Elsevier B.V. All rights reserved.

A mobile-mobile transport model for simulating reactive transport in connected heterogeneous fields

NASA Astrophysics Data System (ADS)

Lu, Chunhui; Wang, Zhiyuan; Zhao, Yue; Rathore, Saubhagya Singh; Huo, Jinge; Tang, Yuening; Liu, Ming; Gong, Rulan; Cirpka, Olaf A.; Luo, Jian

2018-05-01

Mobile-immobile transport models can be effective in reproducing heavily tailed breakthrough curves of concentration. However, such models may not adequately describe transport along multiple flow paths with intermediate velocity contrasts in connected fields. We propose using the mobile-mobile model for simulating subsurface flow and associated mixing-controlled reactive transport in connected fields. This model includes two local concentrations, one in the fast- and the other in the slow-flow domain, which predict both the concentration mean and variance. The normalized total concentration variance within the flux is found to be a non-monotonic function of the discharge ratio with a maximum concentration variance at intermediate values of the discharge ratio. We test the mobile-mobile model for mixing-controlled reactive transport with an instantaneous, irreversible bimolecular reaction in structured and connected random heterogeneous domains, and compare the performance of the mobile-mobile to the mobile-immobile model. The results indicate that the mobile-mobile model generally predicts the concentration breakthrough curves (BTCs) of the reactive compound better. Particularly, for cases of an elliptical inclusion with intermediate hydraulic-conductivity contrasts, where the travel-time distribution shows bimodal behavior, the prediction of both the BTCs and maximum product concentration is significantly improved. Our results exemplify that the conceptual model of two mobile domains with diffusive mass transfer in between is in general good for predicting mixing-controlled reactive transport, and particularly so in cases where the transfer in the low-conductivity zones is by slow advection rather than diffusion.

Characterization and Fabrication of High k dielectric-High Mobility Channel Transistors

NASA Astrophysics Data System (ADS)

Sun, Xiao

As the conventional scaling of Si-based MOSFETs would bring negligible or even negative merits for IC's beyond the 7-nm CMOS technology node, many perceive the use of high-mobility channels to be one of the most likely principle changes, in order to achieve higher performance and lower power. However, interface and oxide traps have become a major obstacle for high-mobility semiconductors (such as Ge, InGaAs, GaSb, GaN...) to replace Si CMOS technology. In this thesis, the distinct properties of the traps in the high-k dielectric/high-mobility substrate system is discussed, as well as the challenges to characterize and passivate them. By modifying certain conventional gate admittance methods, both the fast and slow traps in Ge MOS gate stacks is investigated. In addition, a novel ac-transconductance method originated at Yale is introduced and demonstrated with several advanced transistors provided by collaborating groups, such as ultra-thin-body & box SO1 MOSFETs (CEA-LETI), InGaAs MOSFETs (IMEC, UT Austin, Purdue), and GaN MOS-HEMT (MIT). By use of the aforementioned characterization techniques, several effective passivation techniques on high mobility substrates (Ge, InGaAs, GaSb, GeSn, etc.) are evaluated, including a novel Ba sub-monolayer passivation of Ge surface. The key factors that need to be considered in passivating high mobility substrates are revealed. The techniques that we have established for characterizing traps in advanced field-effect transistors, as well as the knowledge gained about these traps by the use of these techniques, have been applied to the study of ionizing radiation effects in high-mobility-channel transistors, because it is very important to understand such effects as these devices are likely to be exposed to radiation-harsh environments, such as in outer space, nuclear plants, and during X-ray or UHV lithography. In this thesis, the total ionizing dose (TD) radiation effects of InGaAs-based MOSFETs and GaN-based MOS-HEMT are studied, and the results help to reveal the underlying mechanisms and inspire ideas for minimizing the TID radiation effects.

Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer.

PubMed

Zan, Hsiao-Wen; Yeh, Chun-Cheng; Meng, Hsin-Fei; Tsai, Chuang-Chuang; Chen, Liang-Hao

2012-07-10

An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm(2) V(-1) s(-1) to 160 cm(2) V(-1) s(-1). This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Epidemiological characteristics of mobile phone ownership and use in korean children and adolescents.

PubMed

Byun, Yoon-Hwan; Ha, Mina; Kwon, Ho-Jang; Choi, Kyung-Hwa; Burm, Eunae; Choi, Yeyong; Lim, Myung-Ho; Yoo, Seung-Jin; Paik, Ki-Chung; Choi, Hyung-Do; Kim, Nam

2013-01-01

As public concern on possible harmful effects of mobile phone in children has been raised, information of epidemiological characteristics of mobile phone use in children and adolescents will be essential for public health policy. Using three databases (n=21,693) collected from 2008 to 2011, we examined characteristics of mobile phone ownership and use, and socioeconomic positions (SEP) in Korean children and adolescents. The ownership rate and the amount of mobile phone use were higher in females than males, in higher school grades than lower grades, and at 2011 than 2008. The average age of first mobile phone ownership was shown to decrease from 12.5 years in currently high school students to 8.4 years in currently elementary school students at 2011. More than 90% of children in the 5th grade owned a mobile phone. More children owned a mobile phone in lower SEP communities than in higher SEP. Children with parents educated less than those with parents educated more were more likely to own and use mobile phone. Considering the epidemiological characteristics of mobile phone use, precautionary measures to prevent unnecessary exposure to mobile phones are needed in children and adolescents.

Epidemiological Characteristics of Mobile Phone Ownership and Use in Korean Children and Adolescents

PubMed Central

Byun, Yoon-Hwan; Kwon, Ho-Jang; Choi, Kyung-Hwa; Burm, Eunae; Choi, Yeyong; Lim, Myung-Ho; Yoo, Seung-Jin; Paik, Ki-Chung; Choi, Hyung-Do; Kim, Nam

2013-01-01

Objectives As public concern on possible harmful effects of mobile phone in children has been raised, information of epidemiological characteristics of mobile phone use in children and adolescents will be essential for public health policy. Methods Using three databases (n=21,693) collected from 2008 to 2011, we examined characteristics of mobile phone ownership and use, and socioeconomic positions (SEP) in Korean children and adolescents. Results The ownership rate and the amount of mobile phone use were higher in females than males, in higher school grades than lower grades, and at 2011 than 2008. The average age of first mobile phone ownership was shown to decrease from 12.5 years in currently high school students to 8.4 years in currently elementary school students at 2011. More than 90% of children in the 5th grade owned a mobile phone. More children owned a mobile phone in lower SEP communities than in higher SEP. Children with parents educated less than those with parents educated more were more likely to own and use mobile phone. Conclusions Considering the epidemiological characteristics of mobile phone use, precautionary measures to prevent unnecessary exposure to mobile phones are needed in children and adolescents. PMID:24498595

A study of effects of electrode contacts on performance of organic-based light-emitting field-effect transistors

NASA Astrophysics Data System (ADS)

Kim, Dae-Kyu; Choi, Jong-Ho

2018-02-01

Herein is presented a comparative performance analysis of heterojunction organic-based light-emitting field-effect transistors (OLEFETs) with symmetric (Au only) and asymmetric (Au and LiF/Al) electrode contacts. The devices had a top source-drain contact with long-channel geometry and were produced by sequentially depositing p-type pentacene and n-type N,N‧-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) using a neutral cluster beam deposition apparatus. The spectroscopic, structural and morphological properties of the organic thin films were examined using photoluminescence (PL) spectroscopy, X-ray diffraction (XRD) method, laser scanning confocal and atomic force microscopy (LSCM, AFM). Based upon the growth of high-quality, well-packed crystalline thin films, the devices demonstrated ambipolar field-effect characteristics, stress-free operational stability, and light emission under ambient conditions. Various device parameters were derived from the fits of the observed characteristics. The hole mobilities were nearly equal irrespective of the electrode contacts, whereas the electron mobilities of the transistors with LiF/Al drain electrodes were higher due to the low injection barrier. For the OLEFETs with symmetric electrodes, electroluminescence (EL) occurred only in the vicinity of the hole-injecting electrode, whereas for the OLEFETs with asymmetric electrodes, the emission occurred in the vicinity of both hole- and electron-injecting electrodes. By tuning the carrier injection and transport through high- and low-work function metals, the hole-electron recombination sites could be controlled. The operating conduction and light emission mechanism are discussed with the aid of EL images obtained using a charge-coupled device (CCD) camera.

Cycle of charge carrier states with formation and extinction of a floating gate in an ambipolar tetracyanoquaterthienoquinoid-based field-effect transistor

NASA Astrophysics Data System (ADS)

Itoh, Takuro; Toyota, Taro; Higuchi, Hiroyuki; Matsushita, Michio M.; Suzuki, Kentaro; Sugawara, Tadashi

2017-03-01

A tetracyanoquaterthienoquinoid (TCT4Q)-based field effect transistor is characterized by the ambipolar transfer characteristics and the facile shift of the threshold voltage induced by the bias stress. The trapping and detrapping kinetics of charge carriers was investigated in detail by the temperature dependence of the decay of source-drain current (ISD). We found a repeatable formation of a molecular floating gate is derived from a 'charge carrier-and-gate' cycle comprising four stages, trapping of mobile carriers, formation of a floating gate, induction of oppositely charged mobile carriers, and recombination between mobile and trapped carriers to restore the initial state.

Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors

NASA Astrophysics Data System (ADS)

Hwang, Ah Young; Kim, Sang Tae; Ji, Hyuk; Shin, Yeonwoo; Jeong, Jae Kyeong

2016-04-01

Transition tantalum induced crystallization of amorphous zinc tin oxide (a-ZTO) was observed at low temperature annealing of 300 °C. Thin-film transistors (TFTs) with an a-ZTO channel layer exhibited a reasonable field-effect mobility of 12.4 cm2/V s, subthreshold swing (SS) of 0.39 V/decade, threshold voltage (VTH) of 1.5 V, and ION/OFF ratio of ˜107. A significant improvement in the field-effect mobility (up to ˜33.5 cm2/V s) was achieved for crystallized ZTO TFTs: this improvement was accomplished without compromising the SS, VTH, or ION/OFF ratio due to the presence of a highly ordered microstructure.

Studies by Near Edge X-ray Absorption Spectroscopies of Bonding Dynamics at the Graphene/Guanine Interface - A Proposal for High Mobility, Organic Graphene Field Effect Transistors

DTIC Science & Technology

2015-07-01

AFRL-AFOSR-UK-TR-2015-0034 Studies by Near Edge X-ray Absorption Spectroscopies of Bonding Dynamics at the Graphene /Guanine...Interface – A Proposal for High Mobility, Organic Graphene Field Effect Transistors Eva Campo BANGOR UNIVERSITY COLLEGE ROAD BANGOR...April 2015 4. TITLE AND SUBTITLE Studies by Near Edge X-ray Absorption Spectroscopies of Bonding Dynamics at the Graphene /Guanine Interface - A

Engineering the mobility increment in pentacene-based field-effect transistors by fast cooling of polymeric modification layer

NASA Astrophysics Data System (ADS)

Ling, Haifeng; Zhang, Chenxi; Chen, Yan; Shao, Yaqing; Li, Wen; Li, Huanqun; Chen, Xudong; Yi, Mingdong; Xie, Linghai; Huang, Wei

2017-06-01

In this work, we investigate the effect of the cooling rate of polymeric modification layers (PMLs) on the mobility improvement of pentacene-based organic field-effect transistors (OFETs). In contrast to slow cooling (SC), the OFETs fabricated through fast cooling (FC) with PMLs containing side chain-phenyl rings, such as polystyrene (PS) and poly (4-vinylphenol) (PVP), show an obvious mobility incensement compared with that of π-group free polymethylmethacrylate (PMMA). Atomic force microscopy (AFM) images and x-ray diffraction (XRD) characterizations have showed that fast-cooled PMLs could effectively enhance the crystallinity of pentacene, which might be related to the optimized homogeneity of surface energy on the surface of polymeric dielectrics. Our work has demonstrated that FC treatment could be a potential strategy for performance modulation of OFETs.

Evolutionary programming-based univector field navigation method for past mobile robots.

PubMed

Kim, Y J; Kim, J H; Kwon, D S

2001-01-01

Most of navigation techniques with obstacle avoidance do not consider the robot orientation at the target position. These techniques deal with the robot position only and are independent of its orientation and velocity. To solve these problems this paper proposes a novel univector field method for fast mobile robot navigation which introduces a normalized two dimensional vector field. The method provides fast moving robots with the desired posture at the target position and obstacle avoidance. To obtain the sub-optimal vector field, a function approximator is used and trained by evolutionary programming. Two kinds of vector fields are trained, one for the final posture acquisition and the other for obstacle avoidance. Computer simulations and real experiments are carried out for a fast moving mobile robot to demonstrate the effectiveness of the proposed scheme.

A Hybrid Constant and Oscillatory Field Ion Mobility Analyzer in Structures for Lossless Ion Manipulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prabhakaran Nair Syamala Amma, Aneesh; Hamid, Ahme

2018-02-28

Ion mobility (IM) spectrometry is becoming an important approach for analyzing molecular ions in the gas phase with applications that span a multitude of scientific areas. There are a variety of IM-based approaches that utilize either constant or oscillatory electric fields. Here, we explore the combination of constant and oscillatory fields applied in a single device to affect the separation and filtering of ions based on their mobilities. The mobility analyzer allows confining and manipulating ions utilizing a combination of radio frequency (RF), direct current (DC) fields, and traveling waves (TW) in a structures for lossless ion manipulations (SLIM) module.more » In this work, we have investigated theoretically and experimentally the concept for continuous filtering of ions based on their mobilities where ions are mobility separated and selected by a combination of TW and constant fields providing opposing forces on the ions. The SLIM module was composed of two surfaces with mirror-image arrays of electrodes and had two regions where the different TW and opposing DC fields could be applied. By appropriately choosing the DC gradient and TW parameters for the two sections, it is possible to transmit ions of a selected mobility while filtering out others. The filtering capabilities are determined by the applied DC gradient and the TW parameters, such as frequency, amplitude and the TW sequence (i.e., the duty cycle of the traveling wave). The effect of different parameters on the sensitivity and the IM resolution of the device have been investigated.« less

A Hybrid Constant and Oscillatory Field Ion Mobility Analyzer Using Structures for Lossless Ion Manipulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prabhakaran, Aneesh; Hamid, Ahmed M.; Garimella, Sandilya V. B.

Ion mobility (IM) spectrometry is becoming an important approach for analyzing molecular ions in the gas phase with applications that span a multitude of scientific areas. There are a variety of IM-based approaches that utilize either constant or oscillatory electric fields. Here, we explore the combination of constant and oscillatory fields applied in a single device to affect the separation and filtering of ions based on their mobilities. The mobility analyzer allows confining and manipulating ions utilizing a combination of radio frequency (RF), direct current (DC) fields, and traveling waves (TW) in a structures for lossless ion manipulations (SLIM) module.more » In this work, we have investigated theoretically and experimentally the concept for continuous filtering of ions based on their mobilities where ions are mobility separated and selected by a combination of TW and constant fields providing opposing forces on the ions. The SLIM module was composed of two surfaces with mirror-image arrays of electrodes and had two regions where the different TW and opposing DC fields could be applied. By appropriately choosing the DC gradient and TW parameters for the two sections, it is possible to transmit ions of a selected mobility while filtering out others. The filtering capabilities are determined by the applied DC gradient and the TW parameters, such as frequency, amplitude and the TW sequence (i.e., the duty cycle of the traveling wave). The effect of different parameters on the sensitivity and the IM resolution of the device have been investigated.« less

Crystal orientation dependence of the dielectric properties for epitaxial BaZr0.15Ti0.85O3 thin films

NASA Astrophysics Data System (ADS)

Miao, J.; Yuan, J.; Wu, H.; Yang, S. B.; Xu, B.; Cao, L. X.; Zhao, B. R.

2007-01-01

Epitaxial Ba0.15Zr0.85TiO3 (BZT) ferroelectric thin films with (001), (011), and (111) orientations were, respectively, grown on La0.67Sr0.33MnO3 (LSMO) buffered LaAlO3 substrates by pulsed laser deposition method. The dc electric-field dependence of permittivity and dielectric loss of (001)-, (011)-, and (111)-oriented BZT/LSMO heterostructures obeys the Johnson formula, and the ac electric-field dependence of that obeys the Rayleigh law under the subswitching field region. The anisotropic dielectric properties are attributed to the higher mobility of the charge carriers, the concentration of mobile interfacial domain walls, and boundaries in the (111)-oriental films than in the (110)- and (100)-oriented films.

Fully Solution-Processed Flexible Organic Thin Film Transistor Arrays with High Mobility and Exceptional Uniformity

PubMed Central

Fukuda, Kenjiro; Takeda, Yasunori; Mizukami, Makoto; Kumaki, Daisuke; Tokito, Shizuo

2014-01-01

Printing fully solution-processed organic electronic devices may potentially revolutionize production of flexible electronics for various applications. However, difficulties in forming thin, flat, uniform films through printing techniques have been responsible for poor device performance and low yields. Here, we report on fully solution-processed organic thin-film transistor (TFT) arrays with greatly improved performance and yields, achieved by layering solution-processable materials such as silver nanoparticle inks, organic semiconductors, and insulating polymers on thin plastic films. A treatment layer improves carrier injection between the source/drain electrodes and the semiconducting layer and dramatically reduces contact resistance. Furthermore, an organic semiconductor with large-crystal grains results in TFT devices with shorter channel lengths and higher field-effect mobilities. We obtained mobilities of over 1.2 cm2 V−1 s−1 in TFT devices with channel lengths shorter than 20 μm. By combining these fabrication techniques, we built highly uniform organic TFT arrays with average mobility levels as high as 0.80 cm2 V−1 s−1 and ideal threshold voltages of 0 V. These results represent major progress in the fabrication of fully solution-processed organic TFT device arrays. PMID:24492785

Specific absorption rate variation in a brain phantom due to exposure by a 3G mobile phone: problems in dosimetry.

PubMed

Behari, J; Nirala, Jay Prakash

2013-12-01

A specific absorption rate (SAR) measurements system has been developed for compliance testing of personal mobile phone in a brain phantom material contained in a Perspex box. The volume of the box has been chosen corresponding to the volume of a small rat and illuminated by a 3G mobile phone frequency (1718.5 MHz), and the emitted radiation directed toward brain phantom .The induced fields in the phantom material are measured. Set up to lift the plane carrying the mobile phone is run by a pulley whose motion is controlled by a stepper motor. The platform is made to move at a pre-determined rate of 2 degrees per min limited up to 20 degrees. The measured data for induced fields in various locations are used to compute corresponding SAR values and inter comparison obtained. These data are also compared with those when the mobile phone is placed horizontally with respect to the position of the animal. The SAR data is also experimentally obtained by measuring a rise in temperature due to this mobile exposures and data compared with those obtained in the previous set. To seek a comparison with the safety criteria same set of measurements are performed in 10 g phantom material contained in a cubical box. These results are higher than those obtained with the knowledge of induced field measurements. It is concluded that SAR values are sensitive to the angular position of the moving platform and are well below the safety criteria prescribed for human exposure. The data are suggestive of having a fresh look to understand the mode of electromagnetic field -bio interaction.

Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers

NASA Astrophysics Data System (ADS)

Xie, J.; Leach, J. H.; Ni, X.; Wu, M.; Shimada, R.; Özgür, Ü.; Morkoç, H.

2007-12-01

InGaN possesses higher electron mobility and velocity than GaN, and therefore is expected to lead to relatively better performances for heterostructure field effect transistors (HFETs). However, the reported mobilities for AlGaN /InGaN HFETs are lower than GaN channel HFETs. To address this issue, we studied the effect of different barriers on the Hall mobility for InGaN channel HFETs grown by metal organic chemical vapor deposition. Unlike the conventional AlGaN barrier, the AlInN barrier can be grown at the same temperature as the InGaN channel layer, alleviating some of the technological roadblocks. Specifically, this avoids possible degradation of the thin InGaN channel during AlGaN growth at high temperatures; and paves the way for better interfaces. An undoped In0.18Al0.82N/AlN/In0.04Ga0.96N HFET structure exhibited a μH=820cm2/Vs, with a ns=2.12×1013cm-2 at room temperature. Moreover, with an In-doped AlGaN barrier, namely, Al0.24In0.01Ga0.75N, grown at 900°C, the μH increased to 1230cm2/Vs with a ns of 1.09×1013cm-2 for a similar InGaN channel. Furthermore, when the barrier was replaced by Al0.25Ga0.75N grown at 1030°C, μH dropped to 870cm2/Vs with ns of 1.26×1013cm-2 at room temperature. Our results suggest that to fully realize the potential of the InGaN channel HFETs, AlInN or AlInGaN should be used as the barrier instead of the conventional AlGaN barrier.

Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanaka, H., E-mail: tanaka@semicon.kuee.kyoto-u.ac.jp; Mori, S.; Morioka, N.

2014-12-21

We calculated the phonon-limited hole mobility in rectangular cross-sectional [001], [110], [111], and [112]-oriented germanium nanowires, and the hole transport characteristics were investigated. A tight-binding approximation was used for holes, and phonons were described by a valence force field model. Then, scattering probability of holes by phonons was calculated taking account of hole-phonon interaction atomistically, and the linearized Boltzmann's transport equation was solved to calculate the hole mobility at low longitudinal field. The dependence of the hole mobility on nanowire geometry was analyzed in terms of the valence band structure of germanium nanowires, and it was found that the dependencemore » was qualitatively reproduced by considering an average effective mass and the density of states of holes. The calculation revealed that [110] germanium nanowires with large height along the [001] direction show high hole mobility. Germanium nanowires with this geometry are also expected to exhibit high electron mobility in our previous work, and thus they are promising for complementary metal-oxide-semiconductor (CMOS) applications.« less

Quantum transport properties of carbon nanotube field-effect transistors with electron-phonon coupling

NASA Astrophysics Data System (ADS)

Ishii, Hiroyuki; Kobayashi, Nobuhiko; Hirose, Kenji

2007-11-01

We investigated the electron-phonon coupling effects on the electronic transport properties of metallic (5,5)- and semiconducting (10,0)-carbon nanotube devices. We calculated the conductance and mobility of the carbon nanotubes with micron-order lengths at room temperature, using the time-dependent wave-packet approach based on the Kubo-Greenwood formula within a tight-binding approximation. We investigated the scattering effects of both longitudinal acoustic and optical phonon modes on the transport properties. The electron-optical phonon coupling decreases the conductance around the Fermi energy for the metallic carbon nanotubes, while the conductance of semiconductor nanotubes is decreased around the band edges by the acoustic phonons. Furthermore, we studied the Schottky-barrier effects on the mobility of the semiconducting carbon nanotube field-effect transistors for various gate voltages. We clarified how the electron mobilities of the devices are changed by the acoustic phonon.

Field assessment of the effects of roadside vegetation on near-road black carbon and particulate matter

EPA Science Inventory

One proposed method for reducing exposure to mobile-source air pollution is the construction or preservation of vegetation barriers between major roads and nearby populations. This study combined stationary and mobile monitoring approaches to determine the effects of an existing,...

Channel length dependence of field-effect mobility of c-axis-aligned crystalline In-Ga-Zn-O field-effect transistors

NASA Astrophysics Data System (ADS)

Matsuda, Shinpei; Kikuchi, Erumu; Yamane, Yasumasa; Okazaki, Yutaka; Yamazaki, Shunpei

2015-04-01

Field-effect transistors (FETs) with c-axis-aligned crystalline In-Ga-Zn-O (CAAC-IGZO) active layers have extremely low off-state leakage current. Exploiting this feature, we investigated the application of CAAC-IGZO FETs to LSI memories. A high on-state current is required for the high-speed operation of these LSI memories. The field-effect mobility μFE of a CAAC-IGZO FET is relatively low compared with the electron mobility of single-crystal Si (sc-Si). In this study, we measured and calculated the channel length L dependence of μFE for CAAC-IGZO and sc-Si FETs. For CAAC-IGZO FETs, μFE remains almost constant, particularly when L is longer than 0.3 µm, whereas that of sc-Si FETs decreases markedly as L shortens. Thus, the μFE difference between both FET types is reduced by miniaturization. This difference in μFE behavior is attributed to the different susceptibilities of electrons to phonon scattering. On the basis of this result and the extremely low off-state leakage current of CAAC-IGZO FETs, we expect high-speed LSI memories with low power consumption.

Treating childhood pneumonia in hard-to-reach areas: a model-based comparison of mobile clinics and community-based care.

PubMed

Pitt, Catherine; Roberts, Bayard; Checchi, Francesco

2012-01-10

Where hard-to-access populations (such as those living in insecure areas) lack access to basic health services, relief agencies, donors, and ministries of health face a dilemma in selecting the most effective intervention strategy. This paper uses a decision mathematical model to estimate the relative effectiveness of two alternative strategies, mobile clinics and fixed community-based health services, for antibiotic treatment of childhood pneumonia, the world's leading cause of child mortality. A "Markov cycle tree" cohort model was developed in Excel with Visual Basic to compare the number of deaths from pneumonia in children aged 1 to 59 months expected under three scenarios: 1) No curative services available, 2) Curative services provided by a highly-skilled but intermittent mobile clinic, and 3) Curative services provided by a low-skilled community health post. Parameter values were informed by literature and expert interviews. Probabilistic sensitivity analyses were conducted for several plausible scenarios. We estimated median pneumonia-specific under-5 mortality rates of 0.51 (95% credible interval: 0.49 to 0.541) deaths per 10,000 child-days without treatment, 0.45 (95% CI: 0.43 to 0.48) with weekly mobile clinics, and 0.31 (95% CI: 0.29 to 0.32) with CHWs in fixed health posts. Sensitivity analyses found the fixed strategy superior, except when mobile clinics visited communities daily, where rates of care-seeking were substantially higher at mobile clinics than fixed posts, or where several variables simultaneously differed substantially from our baseline assumptions. Current evidence does not support the hypothesis that mobile clinics are more effective than CHWs. A CHW strategy therefore warrants consideration in high-mortality, hard-to-access areas. Uncertainty remains, and parameter values may vary across contexts, but the model allows preliminary findings to be updated as new or context-specific evidence becomes available. Decision analytic modelling can guide needed field-based research efforts in hard-to-access areas and offer evidence-based insights for decision-makers.

Deep-submicron Graphene Field-Effect Transistors with State-of-Art fmax

PubMed Central

Lyu, Hongming; Lu, Qi; Liu, Jinbiao; Wu, Xiaoming; Zhang, Jinyu; Li, Junfeng; Niu, Jiebin; Yu, Zhiping; Wu, Huaqiang; Qian, He

2016-01-01

In order to conquer the short-channel effects that limit conventional ultra-scale semiconductor devices, two-dimensional materials, as an option of ultimate thin channels, receive wide attention. Graphene, in particular, bears great expectations because of its supreme carrier mobility and saturation velocity. However, its main disadvantage, the lack of bandgap, has not been satisfactorily solved. As a result, maximum oscillation frequency (fmax) which indicates transistors’ power amplification ability has been disappointing. Here, we present submicron field-effect transistors with specially designed low-resistance gate and excellent source/drain contact, and therefore significantly improved fmax. The fabrication was assisted by the advanced 8-inch CMOS back-end-of-line technology. A 200-nm-gate-length GFET achieves fT/fmax = 35.4/50 GHz. All GFET samples with gate lengths ranging from 200 nm to 400 nm possess fmax 31–41% higher than fT, closely resembling Si n-channel MOSFETs at comparable technology nodes. These results re-strengthen the promise of graphene field-effect transistors in next generation semiconductor electronics. PMID:27775009

Hematopoietic Progenitor Cell Mobilization with “Just-in-Time” Plerixafor Approach is a Cost Effective Alternative to Routine Plerixafor Use

PubMed Central

Veltri, Lauren; Cumpston, Aaron; Shillingburg, Alexandra; Wen, Sijin; Luo, Jin; Leadmon, Sonia; Watkins, Kathy; Craig, Michael; Hamadani, Mehdi; Kanate, Abraham S.

2015-01-01

Hematopoietic progenitor cell (HPC) mobilization with granulocyte-colony stimulating factor (G-CSF) and plerixafor results in superior CD34+ cell yield, when compared to mobilization with G-CSF alone in patients with myeloma and lymphoma. However, plerixafor-based approaches are associated with high costs. To circumvent this, several institutions use a so-called “just-in-time” plerixafor (JIT-P) approach, where plerixafor is only administered to patients likely to fail mobilization with G-CSF alone. Whether such a JIT-P approach is cost effective has not been confirmed to date. We present here, results of 136 patients with myeloma or lymphoma who underwent mobilization with two different approaches of plerixafor utilization. Between Jan 2010-Oct 2012 (n=76) patients uniformly received mobilization with G-CSF and plerixafor (routine G+P cohort). To reduce mobilization costs, between Nov 2012-Jun 2014 (n=60) patients were mobilized with JIT-P where plerixafor was only administered to patients likely to fail mobilization with G-CSF alone. Patients in routine G+P group had a higher median peak peripheral blood CD34+ cell count (62 vs. 29 cells/μL, p<0.001) and a higher median day 1 CD34+ cell yield (2.9 × 106 CD34+ cells/kg vs. 2.1 × 106 CD34+ cells/kg, p=0.001). The median total CD34+ cell collection was also higher in routine G+P group (5.8 × 106 CD34+ cells/kg vs. 4.5 × 106 CD34+ cells/kg, p=0.007). In the JIT-P group 40% (n=24) completed adequate HPC collection without plerixafor. There was no difference in mobilization failure rates. The mean number of plerixafor doses utilized in JIT-P was lower (1.3 vs. 2.1, p=0.0002). The mean estimated cost in the routine G+P group was higher than that in the JIT-P group (USD 27,513 vs. USD 23,597, p=0.01). Our analysis demonstrates that mobilization with a JIT-P approach is a safe, effective and cost efficient strategy for HPC collection. PMID:26475754

Electron mobility enhancement in epitaxial multilayer Si-Si/1-x/Ge/x/ alloy films on /100/Si

NASA Technical Reports Server (NTRS)

Manasevit, H. M.; Gergis, I. S.; Jones, A. B.

1982-01-01

Enhanced Hall-effect mobilities have been measured in epitaxial (100)-oriented multilayer n-type Si/Si(1-x)Ge(x) films grown on single-crystal Si substrates by chemical vapor deposition. Mobilities from 20 to 40% higher than that of epitaxial Si layers and about 100% higher than that of epitaxial SiGe layers on Si were measured for the doping range 8 x 10 to the 15th to 10 to the 17th/cu cm. No mobility enhancement was observed in multilayer p-type (100) films and n-type (111)-oriented films. Experimental studies included the effects upon film properties of layer composition, total film thickness, doping concentrations, layer thickness, and growth temperature.

Intrinsically stretchable and healable semiconducting polymer for organic transistors

NASA Astrophysics Data System (ADS)

Oh, Jin Young; Rondeau-Gagné, Simon; Chiu, Yu-Cheng; Chortos, Alex; Lissel, Franziska; Wang, Ging-Ji Nathan; Schroeder, Bob C.; Kurosawa, Tadanori; Lopez, Jeffrey; Katsumata, Toru; Xu, Jie; Zhu, Chenxin; Gu, Xiaodan; Bae, Won-Gyu; Kim, Yeongin; Jin, Lihua; Chung, Jong Won; Tok, Jeffrey B.-H.; Bao, Zhenan

2016-11-01

Thin-film field-effect transistors are essential elements of stretchable electronic devices for wearable electronics. All of the materials and components of such transistors need to be stretchable and mechanically robust. Although there has been recent progress towards stretchable conductors, the realization of stretchable semiconductors has focused mainly on strain-accommodating engineering of materials, or blending of nanofibres or nanowires into elastomers. An alternative approach relies on using semiconductors that are intrinsically stretchable, so that they can be fabricated using standard processing methods. Molecular stretchability can be enhanced when conjugated polymers, containing modified side-chains and segmented backbones, are infused with more flexible molecular building blocks. Here we present a design concept for stretchable semiconducting polymers, which involves introducing chemical moieties to promote dynamic non-covalent crosslinking of the conjugated polymers. These non-covalent crosslinking moieties are able to undergo an energy dissipation mechanism through breakage of bonds when strain is applied, while retaining high charge transport abilities. As a result, our polymer is able to recover its high field-effect mobility performance (more than 1 square centimetre per volt per second) even after a hundred cycles at 100 per cent applied strain. Organic thin-film field-effect transistors fabricated from these materials exhibited mobility as high as 1.3 square centimetres per volt per second and a high on/off current ratio exceeding a million. The field-effect mobility remained as high as 1.12 square centimetres per volt per second at 100 per cent strain along the direction perpendicular to the strain. The field-effect mobility of damaged devices can be almost fully recovered after a solvent and thermal healing treatment. Finally, we successfully fabricated a skin-inspired stretchable organic transistor operating under deformations that might be expected in a wearable device.

Intrinsically stretchable and healable semiconducting polymer for organic transistors.

PubMed

Oh, Jin Young; Rondeau-Gagné, Simon; Chiu, Yu-Cheng; Chortos, Alex; Lissel, Franziska; Wang, Ging-Ji Nathan; Schroeder, Bob C; Kurosawa, Tadanori; Lopez, Jeffrey; Katsumata, Toru; Xu, Jie; Zhu, Chenxin; Gu, Xiaodan; Bae, Won-Gyu; Kim, Yeongin; Jin, Lihua; Chung, Jong Won; Tok, Jeffrey B-H; Bao, Zhenan

2016-11-17

Thin-film field-effect transistors are essential elements of stretchable electronic devices for wearable electronics. All of the materials and components of such transistors need to be stretchable and mechanically robust. Although there has been recent progress towards stretchable conductors, the realization of stretchable semiconductors has focused mainly on strain-accommodating engineering of materials, or blending of nanofibres or nanowires into elastomers. An alternative approach relies on using semiconductors that are intrinsically stretchable, so that they can be fabricated using standard processing methods. Molecular stretchability can be enhanced when conjugated polymers, containing modified side-chains and segmented backbones, are infused with more flexible molecular building blocks. Here we present a design concept for stretchable semiconducting polymers, which involves introducing chemical moieties to promote dynamic non-covalent crosslinking of the conjugated polymers. These non-covalent crosslinking moieties are able to undergo an energy dissipation mechanism through breakage of bonds when strain is applied, while retaining high charge transport abilities. As a result, our polymer is able to recover its high field-effect mobility performance (more than 1 square centimetre per volt per second) even after a hundred cycles at 100 per cent applied strain. Organic thin-film field-effect transistors fabricated from these materials exhibited mobility as high as 1.3 square centimetres per volt per second and a high on/off current ratio exceeding a million. The field-effect mobility remained as high as 1.12 square centimetres per volt per second at 100 per cent strain along the direction perpendicular to the strain. The field-effect mobility of damaged devices can be almost fully recovered after a solvent and thermal healing treatment. Finally, we successfully fabricated a skin-inspired stretchable organic transistor operating under deformations that might be expected in a wearable device.

Student Mobility and Internationalisation in Higher Education: Perspectives from Practitioners

ERIC Educational Resources Information Center

Castro, Paloma; Woodin, Jane; Lundgren, Ulla; Byram, Michael

2016-01-01

Internationalisation is high on the agenda of higher education institutions across the world. Previous research on national and local policies surrounding this phenomenon has identified different discourses of internationalisation which may have an effect on practices such as student mobility. In order to understand better the role of student…

Low-frequency (1/f) noise in nanocrystal field-effect transistors.

PubMed

Lai, Yuming; Li, Haipeng; Kim, David K; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

2014-09-23

We investigate the origins and magnitude of low-frequency noise in high-mobility nanocrystal field-effect transistors and show the noise is of 1/f-type. Sub-band gap states, in particular, those introduced by nanocrystal surfaces, have a significant influence on the 1/f noise. By engineering the device geometry and passivating nanocrystal surfaces, we show that in the linear and saturation regimes the 1/f noise obeys Hooge's model of mobility fluctuations, consistent with transport of a high density of accumulated carriers in extended electronic states of the NC thin films. In the subthreshold regime, the Fermi energy moves deeper into the mobility gap and sub-band gap trap states give rise to a transition to noise dominated by carrier number fluctuations as described in McWhorter's model. CdSe nanocrystal field-effect transistors have a Hooge parameter of 3 × 10(-2), comparable to other solution-deposited, thin-film devices, promising high-performance, low-cost, low-noise integrated circuitry.

Organic field effect transistors - Study of performance parameters for different dielectric layer thickness

NASA Astrophysics Data System (ADS)

Assis, Anu; Shahul Hameed T., A.; Predeep, P.

2017-06-01

Mobility and current handling capabilities of Organic Field Effect Transistor (OFET) are vitally important parameters in the electrical performance where the material parameters and thickness of different layers play significant role. In this paper, we report the simulation of an OFET using multi physics tool, where the active layer is pentacene and Poly Methyl Methacrylate (PMMA) forms the dielectric. Electrical characterizations of the OFET on varying the thickness of the dielectric layer from 600nm to 400nm are simulated and drain current, transconductance and mobility are analyzed. In the study it is found that even though capacitance increases with reduction in dielectric layer thickness, the transconductance effect is reflected many more times in the mobility which in turn could be attributed to the variations in transverse electric field. The layer thickness below 300nm may result in gate leakage current points to the requirement of optimizing the thickness of different layers for better performance.

Experimental ion mobility measurements for the LCTPC collaboration—Ar-CF4 mixtures

NASA Astrophysics Data System (ADS)

Santos, M. A. G.; Kaja, M. A.; Cortez, A. F. V.; Veenhof, R.; Neves, P. N. B.; Santos, F. P.; Borges, F. I. G. M.; Conde, C. A. N.

2018-04-01

In this paper we present the results of the ion mobility measurements made in pure carbon tetrafluoride (CF4) and gaseous mixtures of argon with carbon tetrafluoride (Ar-CF4) for pressures ranging from 6 to 10 Torr (8–10.6 mbar) and for low reduced electric fields in the 10 Td to 25 Td range (2.4-6.1 kVṡcm‑1ṡbar‑1), at room temperature. The time of arrival spectra revealed only one peak throughout the entire range studied which was attributed to CF3+. However, for Ar concentrations above 70%, a bump starts to appear at the left side of the main peak for reduced electric fields higher than 15 Td, which was attributed to impurities. The reduced mobilities obtained from the peak centroid of the time-of-arrival spectra are presented for Ar concentrations in the 5%–95% range.

Effect of Heterogeneous Interest Similarity on the Spread of Information in Mobile Social Networks

NASA Astrophysics Data System (ADS)

Zhao, Narisa; Sui, Guoqin; Yang, Fan

2018-06-01

Mobile social networks (MSNs) are important platforms for spreading news. The fact that individuals usually forward information aligned with their own interests inevitably changes the dynamics of information spread. Thereby, first we present a theoretical model based on the discrete Markov chain and mean field theory to evaluate the effect of interest similarity on the information spread in MSNs. Meanwhile, individuals' interests are heterogeneous and vary with time. These two features result in interest shift behavior, and both features are considered in our model. A leveraging simulation demonstrates the accuracy of our model. Moreover, the basic reproduction number R0 is determined. Further extensive numerical analyses based on the model indicate that interest similarity has a critical impact on information spread at the early spreading stage. Specifically, the information always spreads more quickly and widely if the interest similarity between an individual and the information is higher. Finally, five actual data sets from Sina Weibo illustrate the validity of the model.

Multiplatform Mobile Laser Scanning: Usability and Performance

PubMed Central

Kukko, Antero; Kaartinen, Harri; Hyyppä, Juha; Chen, Yuwei

2012-01-01

Mobile laser scanning is an emerging technology capable of capturing three-dimensional data from surrounding objects. With state-of-the-art sensors, the achieved point clouds capture object details with good accuracy and precision. Many of the applications involve civil engineering in urban areas, as well as traffic and other urban planning, all of which serve to make 3D city modeling probably the fastest growing market segment in this field. This article outlines multiplatform mobile laser scanning solutions such as vehicle- and trolley-operated urban area data acquisition, and boat-mounted equipment for fluvial environments. Moreover, we introduce a novel backpack version of mobile laser scanning equipment for surveying applications in the field of natural sciences where the requirements include precision and mobility in variable terrain conditions. In addition to presenting a technical description of the systems, we discuss the performance of the solutions in the light of various applications in the fields of urban mapping and modeling, fluvial geomorphology, snow-cover characterization, precision agriculture, and in monitoring the effects of climate change on permafrost landforms. The data performance of the mobile laser scanning approach is described by the results of an evaluation of the ROAMER on a permanent MLS test field. Furthermore, an in situ accuracy assessment using a field of spherical 3D targets for the newly-introduced Akhka backpack system is conducted and reported on.

Ambipolar pentacene field-effect transistor with double-layer organic insulator

NASA Astrophysics Data System (ADS)

Kwak, Jeong-Hun; Baek, Heume-Il; Lee, Changhee

2006-08-01

Ambipolar conduction in organic field-effect transistor is very important feature to achieve organic CMOS circuitry. We fabricated an ambipolar pentacene field-effect transistors consisted of gold source-drain electrodes and double-layered PMMA (Polymethylmethacrylate) / PVA (Polyvinyl Alcohol) organic insulator on the ITO(Indium-tin-oxide)-patterned glass substrate. These top-contact geometry field-effect transistors were fabricated in the vacuum of 10 -6 Torr and minimally exposed to atmosphere before its measurement and characterized in the vacuum condition. Our device showed reasonable p-type characteristics of field-effect hole mobility of 0.2-0.9 cm2/Vs and the current ON/OFF ratio of about 10 6 compared to prior reports with similar configurations. For the n-type characteristics, field-effect electron mobility of 0.004-0.008 cm2/Vs and the current ON/OFF ratio of about 10 3 were measured, which is relatively high performance for the n-type conduction of pentacene field-effect transistors. We attributed these ambipolar properties mainly to the hydroxyl-free PMMA insulator interface with the pentacene active layer. In addition, an increased insulator capacitance due to double-layer insulator structure with high-k PVA layer also helped us to observe relatively good n-type characteristics.

Initiating collaboration among organ transplant professionals through Web portals and mobile applications.

PubMed

Alexander, Susan; Hoy, Haley; Maskey, Manil; Conover, Helen; Gamble, John; Fraley, Anne

2013-05-13

The knowledge base for healthcare providers working in the field of organ transplantation has grown exponentially. However, the field has no centralized 'space' dedicated to efficient access and sharing of information. The ease of use and portability of mobile applications (apps) make them ideal for subspecialists working in complex healthcare environments. In this article, the authors review the literature related to healthcare technology; describe the development of health-related technology; present their mobile app pilot project assessing the effects of a collaborative, mobile app based on a freely available content manage framework; and report their findings. They conclude by sharing both lessons learned while completing this project and future directions.

Do mobile phone base stations affect sleep of residents? Results from an experimental double-blind sham-controlled field study.

PubMed

Danker-Hopfe, Heidi; Dorn, Hans; Bornkessel, Christian; Sauter, Cornelia

2010-01-01

The aim of the present double-blind, sham-controlled, balanced randomized cross-over study was to disentangle effects of electromagnetic fields (EMF) and non-EMF effects of mobile phone base stations on objective and subjective sleep quality. In total 397 residents aged 18-81 years (50.9% female) from 10 German sites, where no mobile phone service was available, were exposed to sham and GSM (Global System for Mobile Communications, 900 MHz and 1,800 MHz) base station signals by an experimental base station while their sleep was monitored at their homes during 12 nights. Participants were randomly exposed to real (GSM) or sham exposure for five nights each. Individual measurement of EMF exposure, questionnaires on sleep disorders, overall sleep quality, attitude towards mobile communication, and on subjective sleep quality (morning and evening protocols) as well as objective sleep data (frontal EEG and EOG recordings) were gathered. Analysis of the subjective and objective sleep data did not reveal any significant differences between the real and sham condition. During sham exposure nights, objective and subjective sleep efficiency, wake after sleep onset, and subjective sleep latency were significantly worse in participants with concerns about possible health risks resulting from base stations than in participants who were not concerned. The study did not provide any evidence for short-term physiological effects of EMF emitted by mobile phone base stations on objective and subjective sleep quality. However, the results indicate that mobile phone base stations as such (not the electromagnetic fields) may have a significant negative impact on sleep quality. (c) 2010 Wiley-Liss, Inc.

Does urban sprawl hold down upward mobility?

USGS Publications Warehouse

Ewing, R.; Hamidi, Shima; Grace, James B.; Wei, Y.

2016-01-01

Contrary to the general perception, the United States has a much more class-bound society than other wealthy countries. The chance of upward mobility for Americans is just half that of the citizens of the Denmark and many other European countries. In addition to other influences, the built environment may contribute to the low rate of upward mobility in the U.S. This study tests the relationship between urban sprawl and upward mobility for commuting zones in the U.S. We examine potential pathways through which sprawl may have an effect on mobility. We use structural equation modeling to account for both direct and indirect effects of sprawl on upward mobility. We find that upward mobility is significantly higher in compact areas than sprawling areas. The direct effect, which we attribute to better job accessibility in more compact commuting zones, is stronger than the indirect effects. Of the indirect effects, only one, through the mediating variable income segregation, is significant.

Organic field-effect transistor with octadecyltrichlorosilane (OTS) self-assembled monolayers on gate oxide: effect of OTS quality

NASA Astrophysics Data System (ADS)

Devynck, M.; Tardy, P.; Wantz, G.; Nicolas, Y.; Hirsch, L.

2011-12-01

The effect of OTS (octadecyltrichlorosilane) Self-Assembled Monolayer (SAM) grafted on SiO2 gate dielectric of pentacene-based OFETs (organic field-effect transistors) is investigated. A significant improvement of the charge mobility (μ), up to 0.74 cm2/V s, is reached thanks to OTS treatment. However, in spite of improved performances, several drawbacks, such as an increase in mobility dispersion, substantial hysteresis in IDS-VG characteristics and high threshold voltages (VT), are observed. Changing solvent and deposition method turns out to have no significant effect on the mobility dispersion. A more accurate approach on the evolution of the mobility and the threshold voltage dispersion with OTS storage time highlights the effect of the OTS solution aging. Even if no difference is evidenced in the surface energy and roughness of the OTS layer, electrical characteristics exhibit considerable deterioration with OTS solution storage time. Using an "aged" OTS solution, opened under air, kept under argon and distilled before use, results in an increase of the IDS-VG hysteresis as well as in VT and in mobility dispersion. In comparison, fresh-OTS-based OFETs present a very low hysteresis, a threshold voltage close to 0 and a much lower mobility dispersion. It is demonstrated that aged OTS solutions contain impurities that are not removed by distillation process, which leads to a less densely packed layer causing interfacial charge traps thus deteriorated performances.

Fundamental and future prospects of printed ambipolar fluorene-type polymer light-emitting transistors for improved external quantum efficiency, mobility, and emission pattern

NASA Astrophysics Data System (ADS)

Kajii, Hirotake

2018-05-01

In this review, we focus on the improved external quantum efficiency, field-effect mobility, and emission pattern of top-gate-type polymer light-emitting transistors (PLETs) based on ambipolar fluorene-type polymers. A low-temperature, high-efficiency, printable red phosphorescent PLET based on poly(alkylfluorene) with modified alkyl side chains fabricated by a film transfer process is demonstrated. Device fabrication based on oriented films leads to an improved EL intensity owing to the increase in field-effect mobility. There are three factors that affect the transport of carriers, i.e., the energy level, threshold voltage, and mobility of each layer for heterostructure PLETs, which result in various emission patterns such as the line-shaped, multicolor and in-plane emission pattern in the full-channel area between source and drain electrodes. Fundamentals and future prospects in heterostructure devices are discussed and reviewed.

Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistors.

PubMed

Chen, Hu; Hurhangee, Michael; Nikolka, Mark; Zhang, Weimin; Kirkus, Mindaugas; Neophytou, Marios; Cryer, Samuel J; Harkin, David; Hayoz, Pascal; Abdi-Jalebi, Mojtaba; McNeill, Christopher R; Sirringhaus, Henning; McCulloch, Iain

2017-09-01

The charge-carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithiophene (IDT) repeat unit, which have both a low Urbach energy and a high mobility in thin-film-transistor (TFT) devices. Expanding on this design motif, copolymers containing the dithiopheneindenofluorene repeat unit are synthesized, which extends the fused aromatic structure with two additional phenyl rings, further rigidifying the polymer backbone. A range of copolymers are prepared and their electrical properties and thin-film morphology evaluated, with the co-benzothiadiazole polymer having a twofold increase in hole mobility when compared to the IDT analog, reaching values of almost 3 cm 2 V -1 s -1 in bottom-gate top-contact organic field-effect transistors. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Does Higher Education Level the Playing Field? Socio-Economic Differences in Graduate Earnings

ERIC Educational Resources Information Center

Crawford, Claire; van der Erve, Laura

2015-01-01

Education--and in particular higher education--is often regarded as a route to social mobility. For this to be the case, however, the link between family background and adult outcomes must be broken (or at least reduced) once we take account of an individual's education history. This paper provides new evidence on differences in graduates'…

Hazards in Motion: Development of Mobile Geofences for Use in Logging Safety

PubMed Central

Zimbelman, Eloise G.; Keefe, Robert F.; Strand, Eva K.; Kolden, Crystal A.; Wempe, Ann M.

2017-01-01

Logging is one of the most hazardous occupations in the United States. Real-time positioning that uses global navigation satellite system (GNSS) technology paired with radio frequency transmission (GNSS-RF) has the potential to reduce fatal and non-fatal accidents on logging operations through the use of geofences that define safe work areas. Until recently, most geofences have been static boundaries. The aim of this study was to evaluate factors affecting mobile geofence accuracy in order to determine whether virtual safety zones around moving ground workers or equipment are a viable option for improving situational awareness on active timber sales. We evaluated the effects of walking pace, transmission interval, geofence radius, and intersection angle on geofence alert delay using a replicated field experiment. Simulation was then used to validate field results and calculate the proportion of GNSS error bearings resulting in early alerts. The interaction of geofence radius and intersection angle affected safety geofence alert delay in the field experiment. The most inaccurate alerts were negative, representing early warning. The magnitude of this effect was largest at the greatest intersection angles. Simulation analysis supported these field results and also showed that larger GNSS error corresponded to greater variability in alert delay. Increasing intersection angle resulted in a larger proportion of directional GNSS error that triggered incorrect, early warnings. Because the accuracy of geofence alerts varied greatly depending on GNSS error and angle of approach, geofencing for occupational safety is most appropriate for general situational awareness unless real-time correction methods to improve accuracy or higher quality GNSS-RF transponders are used. PMID:28394303

Soot Formation and Destruction in High-Pressure Flames with Real Fuels

DTIC Science & Technology

2013-08-18

due to its higher mobility ) as the mixture exits the fuel tube leaving relatively high concentrations of ethylene in the lifted region, leading to...resulting in more soot production. This could potentially be explained by comparing the mobility of argon to nitrogen. Argon diffuses away from the...precursors formed due to a large concentration of fuel caused by the higher mobility of helium relative to fuel and thus an effective reduction in the

The state of ergonomics for mobile computing technology.

PubMed

Dennerlein, Jack T

2015-01-01

Because mobile computing technologies, such as notebook computers, smart mobile phones, and tablet computers afford users many different configurations through their intended mobility, there is concern about their effects on musculoskeletal pain and a need for usage recommendations. Therefore the main goal of this paper to determine which best practices surrounding the use of mobile computing devices can be gleaned from current field and laboratory studies of mobile computing devices. An expert review was completed. Field studies have documented various user configurations, which often include non-neutral postures, that users adopt when using mobile technology, along with some evidence suggesting that longer duration of use is associated with more discomfort. It is therefore prudent for users to take advantage of their mobility and not get stuck in any given posture for too long. The use of accessories such as appropriate cases or riser stands, as well as external keyboards and pointing devices, can also improve postures and comfort. Overall, the state of ergonomics for mobile technology is a work in progress and there are more research questions to be addressed.

Experimental considerations in metal mobilization from soil by chelating ligands: The influence of soil-solution ratio and pre-equilibration - A case study on Fe acquisition by phytosiderophores.

PubMed

Schenkeveld, W D C; Kimber, R L; Walter, M; Oburger, E; Puschenreiter, M; Kraemer, S M

2017-02-01

The efficiency of chelating ligands in mobilizing metals from soils and sediments is generally examined under conditions remote from those under which they are exuded or applied in the field. This may lead to incorrect estimations of the mobilizing efficiency. The aim of this study was to establish the influence of the soil solution ratio (SSR) and pre-equilibration with electrolyte solution on metal mobilization and metal displacement. For this purpose a series of interaction experiments with a calcareous clay soil and a biogenic chelating agent, the phytosiderophore 2'-deoxymugineic acid (DMA) were carried out. For a fixed ligand concentration, the SSR had a strong influence on metal mobilization and displacement. Metal complexation was faster at higher SSR. Reactive pools of metals that were predominantly mobilized at SSR 6 (in this case Cu), became depleted at SSR 0.1, whereas metals that were marginally mobilized at SSR 6, were dominantly mobilized at SSR 0.1 (in this case Fe), because of large soil reactive pools. For a fixed "amount of ligand"-to-"amount of soil"-ratio, metal complexation scaled linearly with the SSR. The efficiency of ligands in mobilizing metals under field conditions can be predicted with batch experiments, as long as the ligand-to-soil-ratio is matched. In most previously reported studies this criterion was not met. Equivalent metal-complex concentrations under field conditions can be back-calculated using adsorption isotherms for the respective metal-complexes. Drying and dry storage created labile pools of Fe, Cu and Zn, which were rapidly mobilized upon addition of DMA solution to dry soil. Pre-equilibration decreased these labile pools, leading to smaller concentrations of these metals during initial mobilization, but did not reduce the lag time between ligand addition and onset of microbial degradation of the metal-complexes. Hence SSR and pre-equilibration should be carefully considered when testing the metal mobilizing efficiency of chelating ligands. Copyright © 2016. Published by Elsevier B.V.

A delta-doped amorphous silicon thin-film transistor with high mobility and stability

NASA Astrophysics Data System (ADS)

Kim, Pyunghun; Lee, Kyung Min; Lee, Eui-Wan; Jo, Younjung; Kim, Do-Hyung; Kim, Hong-jae; Yang, Key Young; Son, Hyunji; Choi, Hyun Chul

2012-12-01

Ultrathin doped layers, known as delta-doped layers, were introduced within the intrinsic amorphous silicon (a-Si) active layer to fabricate hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with enhanced field-effect mobility. The performance of the delta-doped a-Si:H TFTs depended on the phosphine (PH3) flow rate and the distance from the n+ a-Si to the deltadoping layer. The delta-doped a-Si:H TFTs fabricated using a commercial manufacturing process exhibited an enhanced field-effect mobility of approximately ˜0.23 cm2/Vs (compared to a conventional a-Si:H TFT with 0.15 cm2/Vs) and a desirable stability under a bias-temperature stress test.

The nature and role of trap states in a dendrimer-based organic field-effect transistor explosive sensor

NASA Astrophysics Data System (ADS)

Tang, Guoqiang; Chen, Simon S. Y.; Lee, Kwan H.; Pivrikas, Almantas; Aljada, Muhsen; Burn, Paul L.; Meredith, Paul; Shaw, Paul E.

2013-06-01

We report the fabrication and charge transport characterization of carbazole dendrimer-based organic field-effect transistors (OFETs) for the sensing of explosive vapors. After exposure to para-nitrotoluene (pNT) vapor, the OFET channel carrier mobility decreases due to trapping induced by the absorbed pNT. The influence of trap states on transport in devices before and after exposure to pNT vapor has been determined using temperature-dependent measurements of the field-effect mobility. These data clearly show that the absorption of pNT vapor into the dendrimer active layer results in the formation of additional trap states. Such states inhibit charge transport by decreasing the density of conducting states.

Tunable Mobility in Double-Gated MoTe2 Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites.

PubMed

Ji, Hyunjin; Joo, Min-Kyu; Yi, Hojoon; Choi, Homin; Gul, Hamza Zad; Ghimire, Mohan Kumar; Lim, Seong Chu

2017-08-30

There is a general consensus that the carrier mobility in a field-effect transistor (FET) made of semiconducting transition-metal dichalcogenides (s-TMDs) is severely degraded by the trapping/detrapping and Coulomb scattering of carriers by ionic charges in the gate oxides. Using a double-gated (DG) MoTe 2 FET, we modulated and enhanced the carrier mobility by adjusting the top- and bottom-gate biases. The relevant mechanism for mobility tuning in this device was explored using static DC and low-frequency (LF) noise characterizations. In the investigations, LF-noise analysis revealed that for a strong back-gate bias the Coulomb scattering of carriers by ionized traps in the gate dielectrics is strongly screened by accumulation charges. This significantly reduces the electrostatic scattering of channel carriers by the interface trap sites, resulting in increased mobility. The reduction of the number of effective trap sites also depends on the gate bias, implying that owing to the gate bias, the carriers are shifted inside the channel. Thus, the number of active trap sites decreases as the carriers are repelled from the interface by the gate bias. The gate-controlled Coulomb-scattering parameter and the trap-site density provide new handles for improving the carrier mobility in TMDs, in a fundamentally different way from dielectric screening observed in previous studies.

Visualization of surfactant enhanced NAPL mobilization and solubilization in a two-dimensional micromodel

DOE Office of Scientific and Technical Information (OSTI.GOV)

ZHONG,LIRONG; MAYER,ALEX; GLASS JR.,ROBERT J.

Surfactant-enhanced aquifer remediation is an emerging technology for aquifers contaminated with nonaqueous phase liquids (NAPLs). A two-dimensional micromodel and image capture system were applied to observe NAPL mobilization and solubilization phenomena. In each experiment, a common residual NAPL field was established, followed by a series of mobilization and solubilization experiments. Mobilization floods included pure water floods with variable flow rates and surfactant floods with variations in surfactant formulations. At relatively low capillary numbers (N{sub ca}<10{sup {minus}3}), the surfactant mobilization floods resulted in higher NAPL saturations than for the pure water flood, for similar N{sub ca}.These differences in macroscopic saturations aremore » explained by differences in micro-scale mobilization processes. Solubilization of the residual NAPL remaining after the mobilization stage was dominated by the formation of dissolution fingers, which produced nonequilibrium NAPL solubilization. A macroemulsion phase also as observed to form spontaneously and persist during the solubilization stage of the experiments.« less

Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films

NASA Astrophysics Data System (ADS)

Dupré, C.; Ernst, T.; Hartmann, J.-M.; Andrieu, F.; Barnes, J.-P.; Rivallin, P.; Faynot, O.; Deleonibus, S.; Fazzini, P. F.; Claverie, A.; Cristoloveanu, S.; Ghibaudo, G.; Cristiano, F.

2007-11-01

Based on electrical measurements and transmission electron microscopy (TEM) imaging, we propose an explanation for the electron and hole mobility degradation with gate length reduction in metal-oxide-semiconductor field effect transistors (MOSFETs). We demonstrate that ion implantation, normally used for source/drain doping, is responsible for transport degradation for short-channel devices. Implantation impact on electrons and holes mobility was investigated both on silicon-on-insulator (SOI) and tensile strained silicon-on-insulator (sSOI) substrates. Wafers with ultrathin Si films (from 8 to 35 nm) were Ge implanted at 3 keV and various concentrations (from 5×1014 to 2×1015 atoms cm-2), then annealed at 600 °C for 1 h. Secondary ion mass spectrometry enabled us to quantify the Ge-implanted atoms concentrations. The end-of-range defects impact on mobility was investigated with the pseudo-MOSFET technique. Measurements showed a mobility decrease as the implantation dose increased. We demonstrated that sSOI mobility is more sensitive to implantation than SOI mobility, without any implantation-induced strain relaxation in sSOI (checked using the ultraviolet Raman technique). A 36% (25%) holes (electrons) mobility degradation was measured for sSOI, while SOI presented a 21% mobility degradation for holes and 5% for electrons. Finally, the electrical results were compared with morphological studies. Plan-view TEM showed the presence of interstitial defects formed during ion implantation and annealing. The defect density was estimated to be two times higher in sSOI than in SOI, which is in full agreement with electrical results mentioned before. The results are relevant for the optimization of the source and drain regions of advanced nanoscale SOI and sSOI transistors.

Improved performance of InSe field-effect transistors by channel encapsulation

NASA Astrophysics Data System (ADS)

Liang, Guangda; Wang, Yiming; Han, Lin; Yang, Zai-Xing; Xin, Qian; Kudrynskyi, Zakhar R.; Kovalyuk, Zakhar D.; Patanè, Amalia; Song, Aimin

2018-06-01

Due to the high electron mobility and photo-responsivity, InSe is considered as an excellent candidate for next generation electronics and optoelectronics. In particular, in contrast to many high-mobility two-dimensional (2D) materials, such as phosphorene, InSe is more resilient to oxidation in air. Nevertheless, its implementation in future applications requires encapsulation techniques to prevent the adsorption of gas molecules on its surface. In this work, we use a common lithography resist, poly(methyl methacrylate) (PMMA) to encapsulate InSe-based field-effect transistors (FETs). The encapsulation of InSe by PMMA improves the electrical stability of the FETs under a gate bias stress, and increases both the drain current and electron mobility. These findings indicate the effectiveness of the PMMA encapsulation method, which could be applied to other 2D materials.

Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near-Infrared Phototransistors.

PubMed

Fu, Lei; Wang, Feng; Wu, Bin; Wu, Nian; Huang, Wei; Wang, Hanlin; Jin, Chuanhong; Zhuang, Lin; He, Jun; Fu, Lei; Liu, Yunqi

2017-08-01

As a member of the group IVB transition metal dichalcogenides (TMDs) family, hafnium disulfide (HfS 2 ) is recently predicted to exhibit higher carrier mobility and higher tunneling current density than group VIB (Mo and W) TMDs. However, the synthesis of high-quality HfS 2 crystals, sparsely reported, has greatly hindered the development of this new field. Here, a facile strategy for controlled synthesis of high-quality atomic layered HfS 2 crystals by van der Waals epitaxy is reported. Density functional theory calculations are applied to elucidate the systematic epitaxial growth process of the S-edge and Hf-edge. Impressively, the HfS 2 back-gate field-effect transistors display a competitive mobility of 7.6 cm 2 V -1 s -1 and an ultrahigh on/off ratio exceeding 10 8 . Meanwhile, ultrasensitive near-infrared phototransistors based on the HfS 2 crystals (indirect bandgap ≈1.45 eV) exhibit an ultrahigh responsivity exceeding 3.08 × 10 5 A W -1 , which is 10 9 -fold higher than 9 × 10 -5 A W -1 obtained from the multilayer MoS 2 in near-infrared photodetection. Moreover, an ultrahigh photogain exceeding 4.72 × 10 5 and an ultrahigh detectivity exceeding 4.01 × 10 12 Jones, superior to the vast majority of the reported 2D-materials-based phototransistors, imply a great promise in TMD-based 2D electronic and optoelectronic applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Controlling Chain Conformations of High-k Fluoropolymer Dielectrics to Enhance Charge Mobilities in Rubrene Single-Crystal Field-Effect Transistors.

PubMed

Adhikari, Jwala M; Gadinski, Matthew R; Li, Qi; Sun, Kaige G; Reyes-Martinez, Marcos A; Iagodkine, Elissei; Briseno, Alejandro L; Jackson, Thomas N; Wang, Qing; Gomez, Enrique D

2016-12-01

A novel photopatternable high-k fluoropolymer, poly(vinylidene fluoride-bromotrifluoroethylene) P(VDF-BTFE), with a dielectric constant (k) between 8 and 11 is demonstrated in thin-film transistors. Crosslinking P(VDF-BTFE) reduces energetic disorder at the dielectric-semiconductor interface by controlling the chain conformations of P(VDF-BTFE), thereby leading to approximately a threefold enhancement in the charge mobility of rubrene single-crystal field-effect transistors. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Channel characterisation for future Ka-band Mobile Satellite Systems and preliminary results

NASA Technical Reports Server (NTRS)

Sforza, Mario; Buonomo, Sergio; Arbesser-Rastburg, Bertram

1994-01-01

Mobile satellite systems (MSS) are presently designed or planned to operate, with the exception of OMNITRACKS, in the lower part of the frequency spectrum (UHF to S-bands). The decisions taken at the last World Administrative Radio Conference in 1992 to increase the allocated L- and S-bands for MSS services will only partly alleviate the problem of system capacity. In addition the use of L-and S-band frequencies generally requires large antenna apertures on board the satellite terminal side. The idea of exploiting the large spectrum resources available at higher frequencies (20-30 GHz) and the perspective of reducing user terminal size (and possibly price too) have spurred the interest of systems designers and planners. On the other hand, Ka-band frequencies suffer from increased slant path losses due to atmospheric attenuation phenomena. The European Space Agency (ESA) has recently embarked on a number of activities aimed at studying the effect of the typical mobile propagation impairments at Ka-band. This paper briefly summarizes ESA efforts in this field of research and presents preliminary experimental results.

Does the low hole transport mass in <110> and <111> Si nanowires lead to mobility enhancements at high field and stress: A self-consistent tight-binding study

NASA Astrophysics Data System (ADS)

Kotlyar, R.; Linton, T. D.; Rios, R.; Giles, M. D.; Cea, S. M.; Kuhn, K. J.; Povolotskyi, Michael; Kubis, Tillmann; Klimeck, Gerhard

2012-06-01

The hole surface roughness and phonon limited mobility in the silicon <100>, <110>, and <111> square nanowires under the technologically important conditions of applied gate bias and stress are studied with the self-consistent Poisson-sp3d5s*-SO tight-binding bandstructure method. Under an applied gate field, the hole carriers in a wire undergo a volume to surface inversion transition diminishing the positive effects of the high <110> and <111> valence band nonparabolicities, which are known to lead to the large gains of the phonon limited mobility at a zero field in narrow wires. Nonetheless, the hole mobility in the unstressed wires down to the 5 nm size remains competitive or shows an enhancement at high gate field over the large wire limit. Down to the studied 3 nm sizes, the hole mobility is degraded by strong surface roughness scattering in <100> and <110> wires. The <111> channels are shown to experience less surface scattering degradation. The physics of the surface roughness scattering dependence on wafer and channel orientations in a wire is discussed. The calculated uniaxial compressive channel stress gains of the hole mobility are found to reduce in the narrow wires and at the high field. This exacerbates the stressed mobility degradation with size. Nonetheless, stress gains of a factor of 2 are obtained for <110> wires down to 3 nm size at a 5×1012 cm-2 hole inversion density per gate area.

Brownian escape and force-driven transport through entropic barriers: Particle size effect.

PubMed

Cheng, Kuang-Ling; Sheng, Yu-Jane; Tsao, Heng-Kwong

2008-11-14

Brownian escape from a spherical cavity through small holes and force-driven transport through periodic spherical cavities for finite-size particles have been investigated by Brownian dynamic simulations and scaling analysis. The mean first passage time and force-driven mobility are obtained as a function of particle diameter a, hole radius R(H), cavity radius R(C), and external field strength. In the absence of external field, the escape rate is proportional to the exit effect, (R(H)R(C))(1-a2R(H))(32). In weak fields, Brownian diffusion is still dominant and the migration is controlled by the exit effect. Therefore, smaller particles migrate faster than larger ones. In this limit the relation between Brownian escape and force-driven transport can be established by the generalized Einstein-Smoluchowski relation. As the field strength is strong enough, the mobility becomes field dependent and grows with increasing field strength. As a result, the size selectivity diminishes.

Impact of nZVI stability on mobility in porous media.

PubMed

Kocur, Chris M; O'Carroll, Denis M; Sleep, Brent E

2013-02-01

Nano-scale zero valent iron (nZVI) has received significant attention because of its potential to rapidly reduce a number of priority source zone contaminants. In order to effectively deliver nZVI to the source zone the nZVI particles must be stable. Previous laboratory studies have demonstrated the mobility of polymer modified suspensions of low concentration nZVI. More recently studies have shown potential for higher concentration nZVI suspensions to be transmitted through porous media. However, with increasing nZVI concentration aggregation is accelerated, reducing the available time for injection before nZVI settles. In this study the colloidal stability and mobility of nZVI concurrently synthesized and stabilized in the presence of carboxy-methyl-cellulose (CMC) are evaluated in one-dimensional column experiments. Low pore water velocity nZVI injections (4, 2, and 0.25 m/day) conducted over periods as long as 80 h with no mixing of the influent reservoir were used to investigate the effects of prolonged aggregation and settling of colloids on transport. A numerical simulator, based on colloid filtration theory, but accounting for particle aggregation and settling was used to evaluate the contributions of aggregation and settling on nZVI mobility. Results suggest that the prediction of nZVI sticking efficiency in column experiments becomes increasingly influenced by aggregation and settling in the influent reservoir as the period of injection increases. Consideration of nZVI stability is required for the prediction of nZVI mobility at the field scale and for the design of successful nZVI remediation plans. Copyright © 2012 Elsevier B.V. All rights reserved.

Nano-colloid electrophoretic transport: Fully explicit modelling via dissipative particle dynamics

NASA Astrophysics Data System (ADS)

Hassanzadeh Afrouzi, Hamid; Farhadi, Mousa; Sedighi, Kurosh; Moshfegh, Abouzar

2018-02-01

In present study, a novel fully explicit approach using dissipative particle dynamics (DPD) method is introduced for modelling electrophoretic transport of nano-colloids in an electrolyte solution. Slater type charge smearing function included in 3D Ewald summation method is employed to treat electrostatic interaction. Moreover, capability of different thermostats are challenged to control the system temperature and study the dynamic response of colloidal electrophoretic mobility under practical ranges of external electric field in nano scale application (0.072 < E < 0.361 v / nm) covering non-linear response regime, and ionic salt concentration (0.049 < SC < 0.69 [M]) covering weak to strong Debye screening of the colloid. The effect of different colloidal repulsions are then studied on temperature, reduced mobility and zeta potential which is computed based on charge distribution within the spherical colloidal EDL. System temperature and electrophoretic mobility both show a direct and inverse relationship respectively with electric field and colloidal repulsion. Mobility declining with colloidal repulsion reaches a plateau which is a relatively constant value at each electrolyte salinity for Aii > 600 in DPD units regardless of electric field intensity. Nosé-Hoover-Lowe-Andersen and Lowe-Andersen thermostats are found to function more effectively under high electric fields (E > 0.145 [ v / nm ]) while thermal equilibrium is maintained. Reasonable agreements are achieved by benchmarking the radial distribution function with available electrolyte structure modellings, as well as comparing reduced mobility against conventional Smoluchowski and Hückel theories, and numerical solution of Poisson-Boltzmann equation.

Diverse radiofrequency sensitivity and radiofrequency effects of mobile or cordless phone near fields exposure in Drosophila melanogaster.

PubMed

Geronikolou, Styliani; Zimeras, Stelios; Davos, Constantinos H; Michalopoulos, Ioannis; Tsitomeneas, Stephanos

2014-01-01

The impact of electromagnetic fields on health is of increasing scientific interest. The aim of this study was to examine how the Drosophila melanogaster animal model is affected when exposed to portable or mobile phone fields. Two experiments have been designed and performed in the same laboratory conditions. Insect cultures were exposed to the near field of a 2G mobile phone (the GSM 2G networks support and complement in parallel the 3G wide band or in other words the transmission of information via voice signals is served by the 2G technology in both mobile phones generations) and a 1880 MHz cordless phone both digitally modulated by human voice. Comparison with advanced statistics of the egg laying of the second generation exposed and non-exposed cultures showed limited statistical significance for the cordless phone exposed culture and statistical significance for the 900 MHz exposed insects. We calculated by physics, simulated and illustrated in three dimensional figures the calculated near fields of radiation inside the experimenting vials and their difference. Comparison of the power of the two fields showed that the difference between them becomes null when the experimental cylinder radius and the height of the antenna increase. Our results suggest a possible radiofrequency sensitivity difference in insects which may be due to the distance from the antenna or to unexplored intimate factors. Comparing the near fields of the two frequencies bands, we see similar not identical geometry in length and height from the antenna and that lower frequencies tend to drive to increased radiofrequency effects.

A Technical Approach to the Evaluation of Radiofrequency Radiation Emissions from Mobile Telephony Base Stations

PubMed Central

Buckus, Raimondas; Strukčinskienė, Birute; Raistenskis, Juozas; Stukas, Rimantas; Šidlauskienė, Aurelija; Čerkauskienė, Rimantė; Isopescu, Dorina Nicolina; Stabryla, Jan; Cretescu, Igor

2017-01-01

During the last two decades, the number of macrocell mobile telephony base station antennas emitting radiofrequency (RF) electromagnetic radiation (EMR) in residential areas has increased significantly, and therefore much more attention is being paid to RF EMR and its effects on human health. Scientific field measurements of public exposure to RF EMR (specifically to radio frequency radiation) from macrocell mobile telephony base station antennas and RF electromagnetic field (EMF) intensity parameters in the environment are discussed in this article. The research methodology is applied according to the requirements of safety norms and Lithuanian Standards in English (LST EN). The article presents and analyses RF EMFs generated by mobile telephony base station antennas in areas accessible to the general public. Measurements of the RF electric field strength and RF EMF power density were conducted in the near- and far-fields of the mobile telephony base station antenna. Broadband and frequency-selective measurements were performed outside (on the roof and on the ground) and in a residential area. The tests performed on the roof in front of the mobile telephony base station antennas in the near-field revealed the presence of a dynamic energy interaction within the antenna electric field, which changes rapidly with distance. The RF EMF power density values on the ground at distances of 50, 100, 200, 300, 400, and 500 m from the base station are very low and are scattered within intervals of 0.002 to 0.05 μW/cm2. The results were compared with international exposure guidelines (ICNIRP). PMID:28257069

A Technical Approach to the Evaluation of Radiofrequency Radiation Emissions from Mobile Telephony Base Stations.

PubMed

Buckus, Raimondas; Strukčinskienė, Birute; Raistenskis, Juozas; Stukas, Rimantas; Šidlauskienė, Aurelija; Čerkauskienė, Rimantė; Isopescu, Dorina Nicolina; Stabryla, Jan; Cretescu, Igor

2017-03-01

During the last two decades, the number of macrocell mobile telephony base station antennas emitting radiofrequency (RF) electromagnetic radiation (EMR) in residential areas has increased significantly, and therefore much more attention is being paid to RF EMR and its effects on human health. Scientific field measurements of public exposure to RF EMR (specifically to radio frequency radiation) from macrocell mobile telephony base station antennas and RF electromagnetic field (EMF) intensity parameters in the environment are discussed in this article. The research methodology is applied according to the requirements of safety norms and Lithuanian Standards in English (LST EN). The article presents and analyses RF EMFs generated by mobile telephony base station antennas in areas accessible to the general public. Measurements of the RF electric field strength and RF EMF power density were conducted in the near- and far-fields of the mobile telephony base station antenna. Broadband and frequency-selective measurements were performed outside (on the roof and on the ground) and in a residential area. The tests performed on the roof in front of the mobile telephony base station antennas in the near-field revealed the presence of a dynamic energy interaction within the antenna electric field, which changes rapidly with distance. The RF EMF power density values on the ground at distances of 50, 100, 200, 300, 400, and 500 m from the base station are very low and are scattered within intervals of 0.002 to 0.05 μW/cm². The results were compared with international exposure guidelines (ICNIRP).

Deep ultraviolet laser direct write for patterning sol-gel InGaZnO semiconducting micro/nanowires and improving field-effect mobility

PubMed Central

Lin, Hung-Cheng; Stehlin, Fabrice; Soppera, Olivier; Zan, Hsiao-Wen; Li, Chang-Hung; Wieder, Fernand; Ponche, Arnaud; Berling, Dominique; Yeh, Bo-Hung; Wang, Kuan-Hsun

2015-01-01

Deep-UV (DUV) laser was used to directly write indium-gallium-zinc-oxide (IGZO) precursor solution and form micro and nanoscale patterns. The directional DUV laser beam avoids the substrate heating and suppresses the diffraction effect. A IGZO precursor solution was also developed to fulfill the requirements for direct photopatterning and for achieving semi-conducting properties with thermal annealing at moderate temperature. The DUV-induced crosslinking of the starting material allows direct write of semi-conducting channels in thin-film transistors but also it improves the field-effect mobility and surface roughness. Material analysis has been carried out by XPS, FTIR, spectroscopic ellipsometry and AFM and the effect of DUV on the final material structure is discussed. The DUV irradiation step results in photolysis and a partial condensation of the inorganic network that freezes the sol-gel layer in a homogeneous distribution, lowering possibilities of thermally induced reorganization at the atomic scale. Laser irradiation allows high-resolution photopatterning and high-enough field-effect mobility, which enables the easy fabrication of oxide nanowires for applications in solar cell, display, flexible electronics, and biomedical sensors. PMID:26014902

Instructional Competencies Needed to Develop Instructional Strategies for Mobile Learning in Fields of Agricultural Education

ERIC Educational Resources Information Center

Irby, Travis; Strong, Robert

2015-01-01

Mobile learning is an evolving form of technology-based learning. The novelty of mobile learning gives educators a new tool for evaluating how to develop effective instruction for this new medium. A Delphi study was conducted using a 30-member panel comprised of experts across 20 states. The purpose was to determine the competencies needed to…

Real versus Simulated Mobile Phone Exposures in Experimental Studies

PubMed Central

Panagopoulos, Dimitris J.; Johansson, Olle; Carlo, George L.

2015-01-01

We examined whether exposures to mobile phone radiation in biological/clinical experiments should be performed with real-life Electromagnetic Fields (EMFs) emitted by commercially available mobile phone handsets, instead of simulated EMFs emitted by generators or test phones. Real mobile phone emissions are constantly and unpredictably varying and thus are very different from simulated emissions which employ fixed parameters and no variability. This variability is an important parameter that makes real emissions more bioactive. Living organisms seem to have decreased defense against environmental stressors of high variability. While experimental studies employing simulated EMF-emissions present a strong inconsistency among their results with less than 50% of them reporting effects, studies employing real mobile phone exposures demonstrate an almost 100% consistency in showing adverse effects. This consistency is in agreement with studies showing association with brain tumors, symptoms of unwellness, and declines in animal populations. Average dosimetry in studies with real emissions can be reliable with increased number of field measurements, and variation in experimental outcomes due to exposure variability becomes less significant with increased number of experimental replications. We conclude that, in order for experimental findings to reflect reality, it is crucially important that exposures be performed by commercially available mobile phone handsets. PMID:26346766

Theory of vibratory mobilization and break-up of non-wetting fluids entrapped in pore constrictions

NASA Astrophysics Data System (ADS)

Beresnev, I.; Li, W.; Vigil, D.

2006-12-01

Quantitative dynamics of a non-wetting (e. g., NAPL) ganglion entrapped in a pore constriction and subjected to vibrations can be approximated by the equation of motion of an oscillator moving under the effect of the external pressure gradient, inertial oscillatory force, and restoring capillary force. The solution of the equation provides the conditions under which the droplet experiences forced oscillations without being mobilized or is liberated upon the acceleration of the wall exceeding an "unplugging" threshold. This solution provides a quantitative tool for the estimation of the parameters of vibratory fields needed to liberate entrapped non-wetting fluids. For typical pore sizes encountered in reservoirs and aquifers, wall accelerations must exceed at least several m/sec2 and even higher levels to mobilize the droplets of NAPL; however, in the populations of ganglia entrapped in natural porous environments, many may reside very near their mobilization thresholds and may be mobilized by extremely low accelerations as well. For given acceleration, lower seismic frequencies are more efficient. The ganglia may also break up into smaller pieces when passing through pore constrictions. The snap-off is governed by the geometry only; for constrictions with sinusoidal profile (spatial wavelength of L and maximum and minimum radii of rmax and rmin, the break-up occurs if L > 2π(rmin rmax)1/2. Computational fluid dynamics shows the details of the break-up process.

Significance of the gate voltage-dependent mobility in the electrical characterization of organic field effect transistors

NASA Astrophysics Data System (ADS)

Kim, Jong Beom; Lee, Dong Ryeol

2018-04-01

We studied the effect of the addition of free hole- and electron-rich organic molecules to organic semiconductors (OSCs) in organic field effect transistors (OFETs) on the gate voltage-dependent mobility. The drain current versus gate voltage characteristics were quantitatively analyzed using an OFET mobility model of power law behavior based on hopping transport in an OSC. This analysis distinguished the threshold voltage shifts, depending on the materials and structures of the OFET device, and properly estimated the hopping transport of the charge carriers induced by the gate bias within the OSC from the power law exponent parameter. The addition of pentacene or C60 molecules to a one-monolayer pentacene-based OFET shifted the threshold voltages negatively or positively, respectively, due to the structural changes that occurred in the OFET device. On the other hand, the power law parameters revealed that the addition of charge carriers of the same or opposite polarity enhanced or hindered hopping transport, respectively. This study revealed the need for a quantitative analysis of the gate voltage-dependent mobility while distinguishing this effect from the threshold voltage effect in order to understand OSC hopping transport in OFETs.

High mobility, dual layer, c-axis aligned crystalline/amorphous IGZO thin film transistor

NASA Astrophysics Data System (ADS)

Chung, Chen-Yang; Zhu, Bin; Greene, Raymond G.; Thompson, Michael O.; Ast, Dieter G.

2015-11-01

We demonstrate a dual layer IGZO thin film transistor (TFT) consisting of a 310 °C deposited c-axis aligned crystal (CAAC) 20 nm thick channel layer capped by a second, 30 nm thick, 260 °C deposited amorphous IGZO layer. The TFT exhibits a saturation field-effect mobility of ˜20 cm2/V s, exceeding the mobility of 50 nm thick single layer reference TFTs fabricated with either material. The deposition temperature of the second layer influences the mobility of the underlying transport layer. When the cap layer is deposited at room temperature (RT), the mobility in the 310 °C deposited CAAC layer is initially low (6.7 cm2/V s), but rises continuously with time over 58 days to 20.5 cm2/V s, i.e., to the same value as when the second layer is deposited at 260 °C. This observation indicates that the two layers equilibrate at RT with a time constant on the order of 5 × 106 s. An analysis based on diffusive transport indicates that the room temperature diffusivity must be of the order of 1 × 10-18 cm2 s-1 with an activation enthalpy EA < 0.2 eV for the mobility limiting species. The findings are consistent with a hypothesis that the amorphous layer deposited on top of the CAAC has a higher solubility for impurities and/or structural defects than the underlying nanocrystalline transport layer, and that the equilibration of the mobility limiting species is rate limited by hydrogen diffusion, whose known diffusivity fits these estimates.

The effects of mobile phone use on pedestrian crossing behaviour at signalized and unsignalized intersections.

PubMed

Hatfield, Julie; Murphy, Susanne

2007-01-01

Research amongst drivers suggests that pedestrians using mobile telephones may behave riskily while crossing the road, and casual observation suggests concerning levels of pedestrian mobile-use. An observational field survey of 270 females and 276 males was conducted to compare the safety of crossing behaviours for pedestrians using, versus not using, a mobile phone. Amongst females, pedestrians who crossed while talking on a mobile phone crossed more slowly, and were less likely to look at traffic before starting to cross, to wait for traffic to stop, or to look at traffic while crossing, compared to matched controls. For males, pedestrians who crossed while talking on a mobile phone crossed more slowly at unsignalized crossings. These effects suggest that talking on a mobile phone is associated with cognitive distraction that may undermine pedestrian safety. Messages explicitly suggesting techniques for avoiding mobile-use while road crossing may benefit pedestrian safety.

Printing Semiconductor-Insulator Polymer Bilayers for High-Performance Coplanar Field-Effect Transistors.

PubMed

Bu, Laju; Hu, Mengxing; Lu, Wanlong; Wang, Ziyu; Lu, Guanghao

2018-01-01

Source-semiconductor-drain coplanar transistors with an organic semiconductor layer located within the same plane of source/drain electrodes are attractive for next-generation electronics, because they could be used to reduce material consumption, minimize parasitic leakage current, avoid cross-talk among different devices, and simplify the fabrication process of circuits. Here, a one-step, drop-casting-like printing method to realize a coplanar transistor using a model semiconductor/insulator [poly(3-hexylthiophene) (P3HT)/polystyrene (PS)] blend is developed. By manipulating the solution dewetting dynamics on the metal electrode and SiO 2 dielectric, the solution within the channel region is selectively confined, and thus make the top surface of source/drain electrodes completely free of polymers. Subsequently, during solvent evaporation, vertical phase separation between P3HT and PS leads to a semiconductor-insulator bilayer structure, contributing to an improved transistor performance. Moreover, this coplanar transistor with semiconductor-insulator bilayer structure is an ideal system for injecting charges into the insulator via gate-stress, and the thus-formed PS electret layer acts as a "nonuniform floating gate" to tune the threshold voltage and effective mobility of the transistors. Effective field-effect mobility higher than 1 cm 2 V -1 s -1 with an on/off ratio > 10 7 is realized, and the performances are comparable to those of commercial amorphous silicon transistors. This coplanar transistor simplifies the fabrication process of corresponding circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Pair mobility functions for rigid spheres in concentrated colloidal dispersions: Force, torque, translation, and rotation

NASA Astrophysics Data System (ADS)

Zia, Roseanna N.; Swan, James W.; Su, Yu

2015-12-01

The formulation of detailed models for the dynamics of condensed soft matter including colloidal suspensions and other complex fluids requires accurate description of the physical forces between microstructural constituents. In dilute suspensions, pair-level interactions are sufficient to capture hydrodynamic, interparticle, and thermodynamic forces. In dense suspensions, many-body interactions must be considered. Prior analytical approaches to capturing such interactions such as mean-field approaches replace detailed interactions with averaged approximations. However, long-range coupling and effects of concentration on local structure, which may play an important role in, e.g., phase transitions, are smeared out in such approaches. An alternative to such approximations is the detailed modeling of hydrodynamic interactions utilizing precise couplings between moments of the hydrodynamic traction on a suspended particle and the motion of that or other suspended particles. For two isolated spheres, a set of these functions was calculated by Jeffrey and Onishi [J. Fluid Mech. 139, 261-290 (1984)] and Jeffrey [J. Phys. Fluids 4, 16-29 (1992)]. Along with pioneering work by Batchelor, these are the touchstone for low-Reynolds-number hydrodynamic interactions and have been applied directly in the solution of many important problems related to the dynamics of dilute colloidal dispersions [G. K. Batchelor and J. T. Green, J. Fluid Mech. 56, 375-400 (1972) and G. K. Batchelor, J. Fluid Mech. 74, 1-29 (1976)]. Toward extension of these functions to concentrated systems, here we present a new stochastic sampling technique to rapidly calculate an analogous set of mobility functions describing the hydrodynamic interactions between two hard spheres immersed in a suspension of arbitrary concentration, utilizing accelerated Stokesian dynamics simulations. These mobility functions provide precise, radially dependent couplings of hydrodynamic force and torque to particle translation and rotation, for arbitrary colloid volume fraction ϕ. The pair mobilities (describing entrainment of one particle by the disturbance flow created by another) decay slowly with separation distance: as 1/r, for volume fractions 0.05 ≤ ϕ ≤ 0.5. For the relative mobility, we find an initially rapid growth as a pair separates, followed by a slow, 1/r growth. Up to ϕ ≤ 0.4, the relative mobility does not reached the far-field value even beyond separations of many particle sizes. In the case of ϕ = 0.5, the far-field asymptote is reached but only at a separation of eight radii and after a slow 1/r growth. At these higher concentrations, the coefficients also reveal liquid-like structural effects on pair mobility at close separations. These results confirm that long-range many-body hydrodynamic interactions are an essential part of the dynamics of concentrated systems and that care must be taken when applying renormalization schemes.

Pair mobility functions for rigid spheres in concentrated colloidal dispersions: Force, torque, translation, and rotation.

PubMed

Zia, Roseanna N; Swan, James W; Su, Yu

2015-12-14

The formulation of detailed models for the dynamics of condensed soft matter including colloidal suspensions and other complex fluids requires accurate description of the physical forces between microstructural constituents. In dilute suspensions, pair-level interactions are sufficient to capture hydrodynamic, interparticle, and thermodynamic forces. In dense suspensions, many-body interactions must be considered. Prior analytical approaches to capturing such interactions such as mean-field approaches replace detailed interactions with averaged approximations. However, long-range coupling and effects of concentration on local structure, which may play an important role in, e.g., phase transitions, are smeared out in such approaches. An alternative to such approximations is the detailed modeling of hydrodynamic interactions utilizing precise couplings between moments of the hydrodynamic traction on a suspended particle and the motion of that or other suspended particles. For two isolated spheres, a set of these functions was calculated by Jeffrey and Onishi [J. Fluid Mech. 139, 261-290 (1984)] and Jeffrey [J. Phys. Fluids 4, 16-29 (1992)]. Along with pioneering work by Batchelor, these are the touchstone for low-Reynolds-number hydrodynamic interactions and have been applied directly in the solution of many important problems related to the dynamics of dilute colloidal dispersions [G. K. Batchelor and J. T. Green, J. Fluid Mech. 56, 375-400 (1972) and G. K. Batchelor, J. Fluid Mech. 74, 1-29 (1976)]. Toward extension of these functions to concentrated systems, here we present a new stochastic sampling technique to rapidly calculate an analogous set of mobility functions describing the hydrodynamic interactions between two hard spheres immersed in a suspension of arbitrary concentration, utilizing accelerated Stokesian dynamics simulations. These mobility functions provide precise, radially dependent couplings of hydrodynamic force and torque to particle translation and rotation, for arbitrary colloid volume fraction ϕ. The pair mobilities (describing entrainment of one particle by the disturbance flow created by another) decay slowly with separation distance: as 1/r, for volume fractions 0.05 ≤ ϕ ≤ 0.5. For the relative mobility, we find an initially rapid growth as a pair separates, followed by a slow, 1/r growth. Up to ϕ ≤ 0.4, the relative mobility does not reached the far-field value even beyond separations of many particle sizes. In the case of ϕ = 0.5, the far-field asymptote is reached but only at a separation of eight radii and after a slow 1/r growth. At these higher concentrations, the coefficients also reveal liquid-like structural effects on pair mobility at close separations. These results confirm that long-range many-body hydrodynamic interactions are an essential part of the dynamics of concentrated systems and that care must be taken when applying renormalization schemes.

Pair mobility functions for rigid spheres in concentrated colloidal dispersions: Force, torque, translation, and rotation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zia, Roseanna N., E-mail: zia@cbe.cornell.edu; Su, Yu; Swan, James W.

2015-12-14

The formulation of detailed models for the dynamics of condensed soft matter including colloidal suspensions and other complex fluids requires accurate description of the physical forces between microstructural constituents. In dilute suspensions, pair-level interactions are sufficient to capture hydrodynamic, interparticle, and thermodynamic forces. In dense suspensions, many-body interactions must be considered. Prior analytical approaches to capturing such interactions such as mean-field approaches replace detailed interactions with averaged approximations. However, long-range coupling and effects of concentration on local structure, which may play an important role in, e.g., phase transitions, are smeared out in such approaches. An alternative to such approximations ismore » the detailed modeling of hydrodynamic interactions utilizing precise couplings between moments of the hydrodynamic traction on a suspended particle and the motion of that or other suspended particles. For two isolated spheres, a set of these functions was calculated by Jeffrey and Onishi [J. Fluid Mech. 139, 261–290 (1984)] and Jeffrey [J. Phys. Fluids 4, 16–29 (1992)]. Along with pioneering work by Batchelor, these are the touchstone for low-Reynolds-number hydrodynamic interactions and have been applied directly in the solution of many important problems related to the dynamics of dilute colloidal dispersions [G. K. Batchelor and J. T. Green, J. Fluid Mech. 56, 375–400 (1972) and G. K. Batchelor, J. Fluid Mech. 74, 1–29 (1976)]. Toward extension of these functions to concentrated systems, here we present a new stochastic sampling technique to rapidly calculate an analogous set of mobility functions describing the hydrodynamic interactions between two hard spheres immersed in a suspension of arbitrary concentration, utilizing accelerated Stokesian dynamics simulations. These mobility functions provide precise, radially dependent couplings of hydrodynamic force and torque to particle translation and rotation, for arbitrary colloid volume fraction ϕ. The pair mobilities (describing entrainment of one particle by the disturbance flow created by another) decay slowly with separation distance: as 1/r, for volume fractions 0.05 ≤ ϕ ≤ 0.5. For the relative mobility, we find an initially rapid growth as a pair separates, followed by a slow, 1/r growth. Up to ϕ ≤ 0.4, the relative mobility does not reached the far-field value even beyond separations of many particle sizes. In the case of ϕ = 0.5, the far-field asymptote is reached but only at a separation of eight radii and after a slow 1/r growth. At these higher concentrations, the coefficients also reveal liquid-like structural effects on pair mobility at close separations. These results confirm that long-range many-body hydrodynamic interactions are an essential part of the dynamics of concentrated systems and that care must be taken when applying renormalization schemes.« less

Effects of socioeconomic position and social mobility on linear growth from early childhood until adolescence.

PubMed

Muraro, Ana Paula; Souza, Rita Adriana Gomes de; Rodrigues, Paulo Rogério Melo; Ferreira, Márcia Gonçalves; Sichieri, Rosely

2017-01-01

To assess the effect of socioeconomic position (SEP) in childhood and social mobility on linear growth through adolescence in a population-based cohort. Children born in Cuiabá-MT, central-western Brazil, were evaluated during 1994 - 1999. They were first assessed during 1999 - 2000 (0 - 5 years) and again during 2009 - 2011 (10 - 17 years), and their height-for-age was evaluated during these two periods.Awealth index was used to classify the SEP of each child's family as low, medium, or high. Social mobility was categorized as upward mobility or no upward mobility. Linear mixed models were used. We evaluated 1,716 children (71.4% of baseline) after 10 years, and 60.6% of the families showed upward mobility, with a higher percentage among the lowest economic classes. A higher height-for-age was also observed among those from families with a high SEP both in childhood (low SEP= -0.35 z-score; high SEP= 0.15 z-score, p < 0.01) and adolescence (low SEP= -0.01 z-score; high SEP= 0.45 z-score, p < 0.01), whereas upward mobility did not affect their linear growth. Expressive social mobility was observed, but SEP in childhood and social mobility did not greatly influence linear growth through childhood in this central-western Brazilian cohort.

Reliable 6 PEP LTPS device for AMOLED's

NASA Astrophysics Data System (ADS)

Chou, Cheng-Wei; Wang, Pei-Yun; Hu, Chin-Wei; Chang, York; Chuang, Ching-Sang; Lin, Yusin

2013-09-01

This study presents a TFT structure which has less photo process and higher cost competitiveness in AMOLED display markets. A novel LTPS based 6 masks TFT structure for bottom emission AMOLED display is demonstrated in this paper. High field effect mobility (PMOS < 80 cm2/Vs ) and high reliability (PBTS △Vth< 0.02V @ 50oC VG=15V 10ks) was accomplished without the high temperature and rapid thermal annealing (RTA) activation process. Furthermore, a 14-inch AMOLED TV was achieved on the proposed 6-pep TFT backplane using the Gen. 3.5 mass production factory.

Optoelectronic aid for patients with severely restricted visual fields in daylight conditions

NASA Astrophysics Data System (ADS)

Peláez-Coca, María Dolores; Sobrado-Calvo, Paloma; Vargas-Martín, Fernando

2011-11-01

In this study we evaluated the immediate effectiveness of an optoelectronic visual field expander in a sample of subjects with retinitis pigmentosa suffering from a severe peripheral visual field restriction. The aid uses the augmented view concept and provides subjects with visual information from outside their visual field. The tests were carried out in daylight conditions. The optoelectronic aid comprises a FPGA (real-time video processor), a wide-angle mini camera and a transparent see-through head-mounted display. This optoelectronic aid is called SERBA (Sistema Electro-óptico Reconfigurable de Ayuda para Baja Visión). We previously showed that, without compromising residual vision, the SERBA system provides information about objects within an area about three times greater on average than the remaining visual field of the subjects [1]. In this paper we address the effects of the device on mobility under daylight conditions with and without SERBA. The participants were six subjects with retinitis pigmentosa. In this mobility test, better results were obtained when subjects were wearing the SERBA system; specifically, both the number of contacts with low-level obstacles and mobility errors decreased significantly. A longer training period with the device might improve its usefulness.

Hopping and trapping mechanisms in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Konezny, S. J.; Bussac, M. N.; Zuppiroli, L.

2010-01-01

A charge carrier in the channel of an organic field-effect transistor (OFET) is coupled to the electric polarization of the gate in the form of a surface Fröhlich polaron [N. Kirova and M. N. Bussac, Phys. Rev. B 68, 235312 (2003)]. We study the effects of the dynamical field of polarization on both small-polaron hopping and trap-limited transport mechanisms. We present numerical calculations of polarization energies, band-narrowing effects due to polarization, hopping barriers, and interface trap depths in pentacene and rubrene transistors as functions of the dielectric constant of the gate insulator and demonstrate that a trap-and-release mechanism more appropriately describes transport in high-mobility OFETs. For mobilities on the order 0.1cm2/Vs and below, all states are highly localized and hopping becomes the predominant mechanism.

Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yokoyama, Masafumi, E-mail: yokoyama@mosfet.t.u-tokyo.ac.jp; Takenaka, Mitsuru; Takagi, Shinichi

2015-02-16

We have realized ultrathin body GaSb-on-insulator (GaSb-OI) on Si wafers by direct wafer bonding technology using atomic-layer deposition (ALD) Al{sub 2}O{sub 3} and have demonstrated GaSb-OI p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si. A 23-nm-thick GaSb-OI p-MOSFET exhibits the peak effective mobility of ∼76 cm{sup 2}/V s. We have found that the effective hole mobility of the thin-body GaSb-OI p-MOSFETs decreases with a decrease in the GaSb-OI thickness or with an increase in Al{sub 2}O{sub 3} ALD temperature. The InAs passivation of GaSb-OI MOS interfaces can enhance the peak effective mobility up to 159 cm{sup 2}/V s for GaSb-OI p-MOSFETs with themore » 20-nm-thick GaSb layer.« less

[Effect of stress and intesity of mobile phone using on the health and subjective symptoms in GSM workers].

PubMed

Szyjkowska, Agata; Gadzicka, Elżbieta; Szymczak, Wiesław; Bortkiewicz, Alicja

2017-07-26

There are no available data on the health consequences that may result from the synergistic effects of electromagnetic fields (EMF) and stress. Understanding the mechanisms of the simultaneous exposure will make it possible to develop procedures to minimize adverse health effects in professionals using mobile phones. A questionnaire survey was conducted in 600 randomly selected people to obtain data on their health status and the prevalence of subjective symptoms related to the mobile phones using. Among them, there were 208 GSM Network employees, to whom the Perceived Stress Scale and Assessment of Stress at Work Questionnaire were sent. Eighty-nine completed questionnaires were returned (response rate - 42.8%). The mean age of respondents was 30.3 years (standard deviation (SD) = 7.7), time of occupational use of mobile phone - 4.1 years (SD = 1.7), the level of occupational stress - 95.3 (SD = 19.1). A significant percentage of people (62.8%) complained of the frequent difficulties in coping with problems of everyday life, and 57.4% had a fairly frequent problems with managing their own affairs. Significant differences in the life stress were detected between groups with different time of phone use (p = 0.03), and in occupational stress level, significant differences were noted between the 2 groups differing in the length of the conversation (p = 0.05). The risk of headache, associated (odds ratio (OR) = 4.2, p = 0.008) or not associated (OR = 2.97, p = 0.04) with calls on mobile phone, adjusted for stress, was significantly higher in people speaking via mobile more than 60 min/day than in those talking less. The study indicates that both stressors acting at the same time (EMF from cell phone and stress) adversely affect the well-being of workers and increase the risk of subjective symptoms. Med Pr 2017;68(5):617-628. This work is available in Open Access model and licensed under a CC BY-NC 3.0 PL license.

Lifespan Socioeconomic Context: Associations with Cognitive Functioning in Later Life.

PubMed

Scott, April B; Reed, Rebecca G; Garcia-Willingham, Natasha E; Lawrence, Karen A; Segerstrom, Suzanne C

2018-06-06

Early socioeconomic status (SES) correlates with later-life cognition. However, the effect of socioeconomic context (SEC), which reflects influences from broader ecological contexts, has not been examined. The present study developed a measure of SEC using lifetime residential addresses and examined SEC and residential mobility effects on later-life cognition. Older adults (N=117, Mage=75) reported addresses since birth. Latent SEC was constructed from census income, employment, and education (1920-2010) for each county and census year, extrapolated between census years. Controlling for current SES, SEC in childhood (ages 0-18) and adulthood (ages 19-60), with finer granulations in young adulthood (ages 19-39) and midlife (ages 40-60), predicted later-life cognition. Effects of residential mobility on later-life cognition were also examined. Higher childhood and adulthood SEC were associated with better Auditory Verbal Learning Test recognition (β=.24, p=.012) and immediate recall (β=.26, p=.008). Higher midlife SEC was associated with faster task switching (β=.26, p=.025) and better task switching efficiency (β=.27, p=.022). Higher residential mobility in childhood was associated with higher crystallized intelligence (β=.194, p=.040). Independent of current SES, childhood and adulthood SEC predicted later-life cognition, which may be sensitive to effects of social institutions and environmental health. SEC assessed across the lifespan, and related residential mobility information, may be important complements to SES in predicting later-life cognitive health.

Electrostatic modulation of the electronic properties of Dirac semimetal Na3Bi thin films

NASA Astrophysics Data System (ADS)

Hellerstedt, Jack; Yudhistira, Indra; Edmonds, Mark T.; Liu, Chang; Collins, James; Adam, Shaffique; Fuhrer, Michael S.

2017-10-01

Large-area thin films of topological Dirac semimetal Na3Bi are grown on amorphous SiO2:Si substrates to realize a field-effect transistor with the doped Si acting as a back gate. As-grown films show charge carrier mobilities exceeding 7 000 cm2/V s and carrier densities below 3 ×1018cm-3 , comparable to the best thin-film Na3Bi . An ambipolar field effect and minimum conductivity are observed, characteristic of Dirac electronic systems. The results are quantitatively understood within a model of disorder-induced charge inhomogeneity in topological Dirac semimetals. The hole mobility is significantly larger than the electron mobility in Na3Bi which we ascribe to the inverted band structure. When present, these holes dominate the transport properties.

Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hwang, Ah Young; Ji, Hyuk; Kim, Sang Tae

2016-04-11

Transition tantalum induced crystallization of amorphous zinc tin oxide (a-ZTO) was observed at low temperature annealing of 300 °C. Thin-film transistors (TFTs) with an a-ZTO channel layer exhibited a reasonable field-effect mobility of 12.4 cm{sup 2}/V s, subthreshold swing (SS) of 0.39 V/decade, threshold voltage (V{sub TH}) of 1.5 V, and I{sub ON/OFF} ratio of ∼10{sup 7}. A significant improvement in the field-effect mobility (up to ∼33.5 cm{sup 2}/V s) was achieved for crystallized ZTO TFTs: this improvement was accomplished without compromising the SS, V{sub TH}, or I{sub ON/OFF} ratio due to the presence of a highly ordered microstructure.

Attention in dichoptic and binocular vision

NASA Technical Reports Server (NTRS)

Kimchi, Ruth; Rubin, Yifat; Gopher, Daniel; Raij, David

1989-01-01

The ability of human subjected to mobilize attention and cope with task requirements under dichoptic and binocular viewing was investigated in an experiment employing a target search task. Subjects were required to search for a target at either the global level, the local level, or at both levels of a compound stimulus. The tasks were performed in a focused attention condition in which subjects had to attend to the stimulus presented to one eye/field (under dichoptic and binocular viewings, respectively) and to ignore the stimulus presented to the irrelevant eye/field, and in a divided attention condition in which subjects had to attend to the stimuli presented to both eyes/fields. Subjects' performance was affected mainly by attention conditions which interacted with task requirements, rather than by viewing situation. An interesting effect of viewing was found for the local-directed search task in which the cost of dividing attention was higher under binocular than under dichoptic viewing.

Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

NASA Astrophysics Data System (ADS)

Luengo-Kovac, M.; Huang, S.; Del Gaudio, D.; Occena, J.; Goldman, R. S.; Raimondi, R.; Sih, V.

2017-11-01

The current-induced spin polarization and momentum-dependent spin-orbit field were measured in InxGa1 -xAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin-polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbit coupling, are found to reproduce the experimental finding that the crystal direction with the smaller net spin-orbit field has larger electrical spin generation efficiency and are used to predict how sample parameters affect the magnitude of the current-induced spin polarization.

Tinnitus and cell phones: the role of electromagnetic radiofrequency radiation.

PubMed

Medeiros, Luisa Nascimento; Sanchez, Tanit Ganz

2016-01-01

Tinnitus is a multifactorial condition and its prevalence has increased on the past decades. The worldwide progressive increase of the use of cell phones has exposed the peripheral auditory pathways to a higher dose of electromagnetic radiofrequency radiation (EMRFR). Some tinnitus patients report that the abusive use of mobiles, especially when repeated in the same ear, might worsen ipsilateral tinnitus. The aim of this study was to evaluate the available evidence about the possible causal association between tinnitus and exposure to electromagnetic waves. A literature review was performed searching for the following keywords: tinnitus, electromagnetic field, mobile phones, radio frequency, and electromagnetic hypersensitivity. We selected 165 articles that were considered clinically relevant in at least one of the subjects. EMRFR can penetrate exposed tissues and safety exposure levels have been established. These waves provoke proved thermogenic effects and potential biological and genotoxic effects. Some individuals are more sensitive to electromagnetic exposure (electrosensitivity), and thus, present earlier symptoms. There may be a common pathophysiology between this electrosensitivity and tinnitus. There are already reasonable evidences to suggest caution for using mobile phones to prevent auditory damage and the onset or worsening of tinnitus. Copyright © 2015 Associação Brasileira de Otorrinolaringologia e Cirurgia Cérvico-Facial. Published by Elsevier Editora Ltda. All rights reserved.

Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors

PubMed

Kagan; Mitzi; Dimitrakopoulos

1999-10-29

Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials. A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated. Hybrids based on the perovskite structure crystallize from solution to form oriented molecular-scale composites of alternating organic and inorganic sheets. Spin-coated thin films of the semiconducting perovskite (C(6)H(5)C(2)H(4)NH(3))(2)SnI(4) form the conducting channel, with field-effect mobilities of 0.6 square centimeters per volt-second and current modulation greater than 10(4). Molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin-film transistors.

Hematopoietic progenitor cell mobilization with "just-in-time" plerixafor approach is a cost-effective alternative to routine plerixafor use.

PubMed

Veltri, Lauren; Cumpston, Aaron; Shillingburg, Alexandra; Wen, Sijin; Luo, Jin; Leadmon, Sonia; Watkins, Kathy; Craig, Michael; Hamadani, Mehdi; Kanate, Abraham S

2015-12-01

Hematopoietic cell mobilization with granulocyte-colony stimulating factor (G-CSF) and plerixafor results in superior CD34+ cell yield compared with G-CSF alone in patients with myeloma and lymphoma. However, plerixafor-based approaches may be associated with high costs. Several institutions use a "just-in-time" plerixafor approach, in which plerixafor is only administered to patients likely to fail mobilization with G-CSF alone. Whether such an approach is cost-effective is unknown. We evaluated 136 patients with myeloma or lymphoma who underwent mobilization with 2 approaches of plerixafor utilization. Between January 2010 and October 2012, 76 patients uniformly received mobilization with G-CSF and plerixafor. Between November 2012 and June 2014, 60 patients were mobilized with plerixafor administered only to those patients likely to fail mobilization with G-CSF alone. The routine plerixafor group had a higher median peak peripheral blood CD34+ cell count (62 versus 29 cells/μL, P < 0.001) and a higher median day 1 CD34+ yield (2.9 × 10(6) CD34+ cells/kg versus 2.1 × 10(6) CD34+ cells/kg, P = 0.001). The median total CD34+ collection was higher with routine plerixafor use (5.8 × 10(6) CD34+ cells/kg versus 4.5 × 10(6) CD34+ cells/kg, P = 0.007). In the "just-in-time" group, 40% (n = 24) completed adequate collection without plerixafor. There was no difference in mobilization failure rates. The mean plerixafor doses used was lower with "just-in-time" approach (1.3 versus 2.1, P = 0.0002). The mean estimated cost in the routine plerixafor group was higher (USD 27,513 versus USD 23,597, P = 0.01). Our analysis demonstrates that mobilization with a just-in-time plerixafor approach is a safe, effective, and cost-efficient strategy for HPC collection. Copyright © 2015 International Society for Cellular Therapy. Published by Elsevier Inc. All rights reserved.

Dose related shifts in the developmental progress of chick embryos exposed to mobile phone induced electromagnetic fields.

PubMed

Zareen, Nusrat; Khan, Muhammad Yunus; Minhas, Liaqat Ali

2009-01-01

The possible adverse effects of Electromagnetic Fields (EMFs) emitted from mobile phones present a major public concern today. Some studies indicate EMFs effects on genes, free radical production, immunological and carcinogenic effects. On the other hand there are studies which do not support the hypothesis of any biological impacts of EMFs. This study was designed to observe the effects of mobile phone induced EMFs on survival and general growth and development of chick embryo, investigating dose-response relationship if any. This was an experimental study in which developing chick embryos were exposed to different doses of mobile phone induced EMFs. For this purpose a mobile phone was placed in the incubator in the centre of fertilised eggs in silent ringing mode and was 'rung' upon from any other line or cell phone. After incubation for 10 or 15 days the eggs were opened and the developmental mile-stones of the surviving embryos were compared with the non exposed subgroup. EMFs exposure significantly decreased the survivability of the chick embryos. The lower doses of EMFs caused growth retardation. However, this effect of growth retardation reallocated to partial growth enhancement on increasing the dose of EMFs and shifted over to definite growth enhancement on further raising the dose. There is an adverse effect of EMFs exposure on embryo survivability. Chick embryos developmental process is influenced by EMFs. However, these effects are variable depending upon the dose of EMFs exposure.

Exposure to mobile phone electromagnetic field radiation, ringtone and vibration affects anxiety-like behaviour and oxidative stress biomarkers in albino wistar rats.

PubMed

Shehu, Abubakar; Mohammed, Aliyu; Magaji, Rabiu Abdussalam; Muhammad, Mustapha Shehu

2016-04-01

Research on the effects of Mobile phone radio frequency emissions on biological systems has been focused on noise and vibrations as auditory stressors. This study investigated the potential effects of exposure to mobile phone electromagnetic field radiation, ringtone and vibration on anxiety-like behaviour and oxidative stress biomarkers in albino wistar rats. Twenty five male wistar rats were randomly divided into five groups of 5 animals each: group I: exposed to mobile phone in switched off mode (control), group II: exposed to mobile phone in silent mode, group III: exposed to mobile phone in vibration mode, group IV: exposed to mobile phone in ringtone mode, group V: exposed to mobile phone in vibration and ringtone mode. The animals in group II to V were exposed to 10 min call (30 missed calls for 20 s each) per day for 4 weeks. Neurobehavioural studies for assessing anxiety were carried out 24 h after the last exposure and the animals were sacrificed. Brain samples were collected for biochemical evaluation immediately. Results obtained showed a significant decrease (P < 0.05) in open arm duration in all the experimental groups when compared to the control. A significant decrease (P < 0.05) was also observed in catalase activity in group IV and V when compared to the control. In conclusion, the results of the present study indicates that 4 weeks exposure to electromagnetic radiation, vibration, ringtone or both produced a significant effect on anxiety-like behavior and oxidative stress in young wistar rats.

A Localization Method for Underwater Wireless Sensor Networks Based on Mobility Prediction and Particle Swarm Optimization Algorithms

PubMed Central

Zhang, Ying; Liang, Jixing; Jiang, Shengming; Chen, Wei

2016-01-01

Due to their special environment, Underwater Wireless Sensor Networks (UWSNs) are usually deployed over a large sea area and the nodes are usually floating. This results in a lower beacon node distribution density, a longer time for localization, and more energy consumption. Currently most of the localization algorithms in this field do not pay enough consideration on the mobility of the nodes. In this paper, by analyzing the mobility patterns of water near the seashore, a localization method for UWSNs based on a Mobility Prediction and a Particle Swarm Optimization algorithm (MP-PSO) is proposed. In this method, the range-based PSO algorithm is used to locate the beacon nodes, and their velocities can be calculated. The velocity of an unknown node is calculated by using the spatial correlation of underwater object’s mobility, and then their locations can be predicted. The range-based PSO algorithm may cause considerable energy consumption and its computation complexity is a little bit high, nevertheless the number of beacon nodes is relatively smaller, so the calculation for the large number of unknown nodes is succinct, and this method can obviously decrease the energy consumption and time cost of localizing these mobile nodes. The simulation results indicate that this method has higher localization accuracy and better localization coverage rate compared with some other widely used localization methods in this field. PMID:26861348

The wireless networking system of Earthquake precursor mobile field observation

NASA Astrophysics Data System (ADS)

Wang, C.; Teng, Y.; Wang, X.; Fan, X.; Wang, X.

2012-12-01

The mobile field observation network could be real-time, reliably record and transmit large amounts of data, strengthen the physical signal observations in specific regions and specific period, it can improve the monitoring capacity and abnormal tracking capability. According to the features of scatter everywhere, a large number of current earthquake precursor observation measuring points, networking technology is based on wireless broadband accessing McWILL system, the communication system of earthquake precursor mobile field observation would real-time, reliably transmit large amounts of data to the monitoring center from measuring points through the connection about equipment and wireless accessing system, broadband wireless access system and precursor mobile observation management center system, thereby implementing remote instrument monitoring and data transmition. At present, the earthquake precursor field mobile observation network technology has been applied to fluxgate magnetometer array geomagnetic observations of Tianzhu, Xichang,and Xinjiang, it can be real-time monitoring the working status of the observational instruments of large area laid after the last two or three years, large scale field operation. Therefore, it can get geomagnetic field data of the local refinement regions and provide high-quality observational data for impending earthquake tracking forecast. Although, wireless networking technology is very suitable for mobile field observation with the features of simple, flexible networking etc, it also has the phenomenon of packet loss etc when transmitting a large number of observational data due to the wireless relatively weak signal and narrow bandwidth. In view of high sampling rate instruments, this project uses data compression and effectively solves the problem of data transmission packet loss; Control commands, status data and observational data transmission use different priorities and means, which control the packet loss rate within an acceptable range and do not affect real-time observation curve. After field running test and earthquake tracking project applications, the field mobile observation wireless networking system is operate normally, various function have good operability and show good performance, the quality of data transmission meet the system design requirements and play a significant role in practical applications.

DNA electrophoresis in agarose gels: effects of field and gel concentration on the exponential dependence of reciprocal mobility on DNA length.

PubMed

Rill, Randolph L; Beheshti, Afshin; Van Winkle, David H

2002-08-01

Electrophoretic mobilities of DNA molecules ranging in length from 200 to 48 502 base pairs (bp) were measured in agarose gels with concentrations T = 0.5% to 1.3% at electric fields from E = 0.71 to 5.0 V/cm. This broad data set determines a range of conditions over which the new interpolation equation nu(L) = (beta+alpha(1+exp(-L/gamma))(-1) can be used to relate mobility to length with high accuracy. Mobility data were fit with chi(2) > 0.999 for all gel concentrations and fields ranging from 2.5 to 5 V/cm, and for lower fields at low gel concentrations. Analyses using so-called reptation plots (Rousseau, J., Drouin, G., Slater, G. W., Phys. Rev. Lett. 1997, 79, 1945-1948) indicate that this simple exponential relation is obeyed well when there is a smooth transition from the Ogston sieving regime to the reptation regime with increasing DNA length. Deviations from this equation occur when DNA migration is hindered, apparently by entropic-trapping, which is favored at low fields and high gel concentrations in the ranges examined.

Modulation doping at BaSnO3LaInO3

NASA Astrophysics Data System (ADS)

Char, Kookrin; Shin, Juyeon; Kim, Young Mo; Kim, Youjung

We recently reported on the conductance enhancement at the interface between two band insulators: LaInO3 (LIO) and BaSnO3 (BSO). These two-dimensional electron gas-like (2DEG) states at the LIO/Ba1-xLaxSnO3 (BLSO) polar interface display the stability, the controllability of the local carrier concentration, and the high electron mobility of BLSO. Search for the origin of enhanced conductance at the interface has been carried out, and one of the findings is that the doping level of BSO is a critical parameter for the polar charge contribution . We have also investigated a new modulated heterostructure by inserting an undoped BSO spacer layer at the LIO/BLSO interface. As increasing the thickness of the spacer layer, the carrier concentration and the mobility continually decreased. We attribute the results to the modified band bending as the thickness of the spacer layer varies and to the dislocation-limited transport. However, when we controlled the band bending by field effect, improved mobility was observed in these modulated heterostructures. This new modulated heterostructures of the LIO/BSO polar interface look promising not only for higher electron mobility devices but also for elucidating the mechanism of the 2DEG-like behavior. Samsung science and technology foundation.

Sensitivity to change of the field-based Wheelchair Mobility Performance Test in wheelchair basketball.

PubMed

de Witte, Annemarie M H; Sjaarda, Fleur; Helleman, Jochem; Berger, Monique A M; van der Woude, Lucas H V; Hoozemans, Marco J M

2018-06-15

The Wheelchair Mobility Performance (WMP) test is a reliable and valid measure to assess mobility performance in wheelchair basketball. The aim of this study was to examine the sensitivity to change of the WMP test by manipulating wheelchair configurations. Sixteen wheelchair basketball players performed the WMP test 3 times in their own wheelchair: (i) without adjustments ("control condition"); (ii) with 10 kg additional mass ("weighted condition"); and (iii) with 50% reduced tyre pressure ("tyre condition"). The outcome measure was time (s). If paired t-tests were significant (p <0.05) and differences between conditions were larger than the standard error of measurement, the effect sizes (ES) were used to evaluate the sensitivity to change. ES values ≥0.2 were regarded as sensitive to change. The overall performance times for the manipulations were significantly higher than the control condition, with mean differences of 4.40 s (weight - control, ES = 0.44) and 2.81 s (tyre - control, ES = 0.27). The overall performance time on the WMP test was judged as sensitive to change. For 8 of the 15 separate tasks on the WMP test, the tasks were judged as sensitive to change for at least one of the manipulations. The WMP test can detect change in mobility performance when wheelchair configurations are manipulated.

Heterostructured semiconductor single-walled carbon nanotube films for solution-processed high-performance field-effect transistors

NASA Astrophysics Data System (ADS)

Park, Noh-Hwal; Lee, Seung-Hoon; Jeong, Seung-Hyeon; Khim, Dongyoon; Kim, Yun Ho; Yoo, Sungmi; Noh, Yong-Young; Kim, Jang-Joo

2018-03-01

In this paper, we report a simple and effective method to simultaneously achieve a high charge-carrier mobility and low off current in conjugated polymer-wrapped semiconducting single-walled carbon nanotube (s-SWNT) transistors by applying a SWNT bilayer. To achieve the high mobility and low off current, highly purified and less purified s-SWNTs are successively coated to form the semiconducting layer consisting of poly (3-dodecylthiophene-2,5-diyl) (P3DDT)-wrapped high-pressure carbon mono oxide (HiPCO) SWNT (P3DDT-HiPCO) and poly (9, 9-di-n-dodecylfluorene) (PFDD)-wrapped plasma discharge (PD) SWNT (PFDD-PD). The SWNT transistors with bilayer SWNT networked film showed highly improved hole field-effect mobility (6.18 ± 0.85 cm2V-1s-1 average), on/off current ratio (107), and off current (˜1 pA). Thus, the combination of less purified PFDD-PD (98%-99%) charge-injection layer and highly purified s-P3DDT-HiPCO (>99%) charge-transport layer as the bi-layered semiconducting film achieved high mobility and low off current simultaneously.

Tuning charge transport in pentacene thin-film transistors using the strain-induced electron-phonon coupling modification

NASA Astrophysics Data System (ADS)

Lin, Yow-Jon; Chang, Hsing-Cheng; Liu, Day-Shan

2015-03-01

Tuning charge transport in the bottom-contact pentacene-based organic thin-film transistors (OTFTs) using a MoO x capping layer that serves to the electron-phonon coupling modification is reported. For OTFTs with a MoO x front gate, the enhanced field-effect carrier mobility is investigated. The time domain data confirm the electron-trapping model. To understand the origin of a mobility enhancement, an analysis of the temperature-dependent Hall-effect characteristics is presented. Similarly, the Hall-effect carrier mobility was dramatically increased by capping a MoO x layer on the pentacene front surface. However, the carrier concentration is not affected. The Hall-effect carrier mobility exhibits strong temperature dependence, indicating the dominance of tunneling (hopping) at low (high) temperatures. A mobility enhancement is considered to come from the electron-phonon coupling modification that results from the contribution of long-lifetime electron trapping.

Enhanced and continuous electrostatic carrier doping on the SrTiO3 surface

PubMed Central

Eyvazov, A. B.; Inoue, I. H.; Stoliar, P.; Rozenberg, M. J.; Panagopoulos, C.

2013-01-01

Paraelectrical tuning of a charge carrier density as high as 1013 cm−2 in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we introduce the Parylene-C/Ta2O5 hybrid gate insulator and fabricate FET devices on single-crystalline SrTiO3, which has been regarded as a bedrock material for oxide electronics. The gate insulator accumulates up to ~1013cm−2 carriers, while the field-effect mobility is kept at 10 cm2/Vs even at room temperature. Further to the exceptional performance of our devices, the enhanced compatibility of high carrier density and high mobility revealed the mechanism for the long standing puzzle of the distribution of electrostatically doped carriers on the surface of SrTiO3. Namely, the formation and continuous evolution of field domains and current filaments.

The influence of annealing on domain wall propagation in bistable amorphous microwire with unidirectional effect

NASA Astrophysics Data System (ADS)

Onufer, Jozef; Ziman, Ján; Duranka, Peter; Kladivová, Mária

2018-07-01

The effect of gradual annealing on the domain wall mobility (velocity), nucleation, critical depinning and propagation fields in amorphous FeSiB microwires has been studied. A new experimental set-up, presented in this paper, allows measurement of average domain wall velocity for four different conditions and detection of the presence of unidirectional effect in wall propagation without manipulation of the microwire. The proposed interpretation is that a domain wall is considered as a relatively long object which can change its axial dimension due to inhomogeneity of damping forces acting on the wall during its propagation. It is demonstrated that unidirectional effect in domain wall propagation can be strongly reduced by annealing the wire at temperatures higher than 350 °C.

An Empirical Study of Graduate Student Mobility Underpinning Research Universities

ERIC Educational Resources Information Center

Furukawa, Takao; Shirakawa, Nobuyuki; Okuwada, Kumi

2013-01-01

The issue of international student mobility has had a profound effect on policy decision-making in the higher education system of essentially every country; however, the statistical data on this subject are insufficient, especially for graduate students. The purposes of this study are to substantiate the state of international mobility among…

Earth Orientation Effects on Mobile VLBI Baselines

NASA Technical Reports Server (NTRS)

Allen, S. L.

1984-01-01

Improvements in data quality for the mobile VLBI systems have placed higher accuracy requirements on Earth orientation calibrations. Errors in these calibrations may give rise to systematic effects in the nonlength components of the baselines. Various sources of Earth orientation data were investigated for calibration of Mobile VLBI baselines. Significant differences in quality between the several available sources of UT1-UTC were found. It was shown that the JPL Kalman filtered space technology data were at least as good as any other and adequate to the needs of current Mobile VLBI systems and observing plans. For polar motion, the values from all service suffice. The effect of Earth orientation errors on the accuracy of differenced baselines was also investigated. It is shown that the effect is negligible for the current mobile systems and observing plan.

Mathematical models of continuous flow electrophoresis: Electrophoresis technology

NASA Technical Reports Server (NTRS)

Saville, Dudley A.

1986-01-01

Two aspects of continuous flow electrophoresis were studied: (1) the structure of the flow field in continuous flow devices; and (2) the electrokinetic properties of suspended particles relevant to electrophoretic separations. Mathematical models were developed to describe flow structure and stability, with particular emphasis on effects due to buoyancy. To describe the fractionation of an arbitrary particulate sample by continuous flow electrophoresis, a general mathematical model was constructed. In this model, chamber dimensions, field strength, buffer composition, and other design variables can be altered at will to study their effects on resolution and throughput. All these mathematical models were implemented on a digital computer and the codes are available for general use. Experimental and theoretical work with particulate samples probed how particle mobility is related to buffer composition. It was found that ions on the surface of small particles are mobile, contrary to the widely accepted view. This influences particle mobility and suspension conductivity. A novel technique was used to measure the mobility of particles in concentrated suspensions.

Influence of polymer dielectrics on C60-based field-effect transistors

NASA Astrophysics Data System (ADS)

Zhou, Jianlin; Zhang, Fujia; Lan, Lifeng; Wen, Shangsheng; Peng, Junbiao

2007-12-01

Fullerene C60 organic field-effect transistors (OFETs) have been fabricated based on two different polymer dielectric materials, poly(methylmethacrylate) (PMMA) and cross-linkable poly(4-vinylphenol). The large grain size of C60 film and small number of traps at the interface of PMMA /C60 were obtained with high electron mobility of 0.66cm2/Vs in the PMMA transistor. The result suggests that the C60 semiconductor cooperating with polymer dielectric is a promising application in the fabrication of n-type organic transistors because of low threshold voltage and high electron mobility.

Device Physics of Contact Issues for the Overestimation and Underestimation of Carrier Mobility in Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Liu, Chuan; Li, Gongtan; Di Pietro, Riccardo; Huang, Jie; Noh, Yong-Young; Liu, Xuying; Minari, Takeo

2017-09-01

Very high values of carrier mobility have been recently reported in newly developed materials for field-effect transistors (FETs) or thin-film transistors (TFTs). However, there is an increasing concern of whether the values are overestimated. In this paper, we investigate how much contact resistance a FET or TFT can tolerate to allow the conventional current-voltage equations, which is derived for no contact resistance. We contend that mobility in transistors with resistive contact can be underestimated with the presence of the injection barrier, whereas mobility in transistors with gated Schottky contact can be overestimated by more than 10 times. The latter phenomenon occurs even in long-channel devices, and it becomes more severe when using low-k dielectrics. This is because the band bending and injection barrier experience a complicated evolution on account of electrostatic doping in the semiconducting layer; thus, they do not follow a capacitance approximation. When the band bending is weak, the accumulation is as weak as that in the subthreshold regime. Accordingly, the carrier concentration nonlinearly increases with the gate field. This mechanism can occur with or without exhibiting the "kink" feature in the transfer curves, which has been suggested as the signature of overestimation. For precision, carrier mobility should be presented against gate voltage and should be examined by other recommended extraction methods.

Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeong, Jaewook; Kim, Joonwoo; Jeong, Soon Moon

In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer.

Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

NASA Astrophysics Data System (ADS)

Jeong, Jaewook; Kim, Joonwoo; Kim, Donghyun; Jeon, Heonsu; Jeong, Soon Moon; Hong, Yongtaek

2016-08-01

In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer.

Massification without Equalisation: The Politics of Higher Education, Graduate Employment and Social Mobility in Hong Kong

ERIC Educational Resources Information Center

Lee, Siu-yau

2016-01-01

This article explains why the massification of higher education in Hong Kong has, contrary to the predictions of received wisdom, failed to enhance the upward social mobility of the youth in the city. Building upon recent literature in political science, it argues that massification can take different forms, which in turn determine the effects of…

The Effects of Compensatory Scanning Training on Mobility in Patients with Homonymous Visual Field Defects: Further Support, Predictive Variables and Follow-Up

PubMed Central

Melis-Dankers, Bart J. M.; Brouwer, Wiebo H.; Tucha, Oliver; Heutink, Joost

2016-01-01

Introduction People with homonymous visual field defects (HVFD) often report difficulty detecting obstacles in the periphery on their blind side in time when moving around. Recently, a randomized controlled trial showed that the InSight-Hemianopia Compensatory Scanning Training (IH-CST) specifically improved detection of peripheral stimuli and avoiding obstacles when moving around, especially in dual task situations. Method The within-group training effects of the previously reported IH-CST are examined in an extended patient group. Performance of patients with HVFD on a pre-assessment, post-assessment and follow-up assessment and performance of a healthy control group are compared. Furthermore, it is examined whether training effects can be predicted by demographic characteristics, variables related to the visual disorder, and neuropsychological test results. Results Performance on both subjective and objective measures of mobility-related scanning was improved after training, while no evidence was found for improvement in visual functions (including visual fields), reading, visual search and dot counting. Self-reported improvement did not correlate with improvement in objective mobility performance. According to the participants, the positive effects were still present six to ten months after training. No demographic characteristics, variables related to the visual disorder, and neuropsychological test results were found to predict the size of training effect, although some inconclusive evidence was found for more improvement in patients with left-sided HVFD than in patients with right-sided HFVD. Conclusion Further support was found for a positive effect of IH-CST on detection of visual stimuli during mobility-related activities specifically. Based on the reports given by patients, these effects appear to be long-term effects. However, no conclusions can be drawn on the objective long-term training effects. PMID:27935973

Effects of exposure to 2100MHz GSM-like radiofrequency electromagnetic field on auditory system of rats.

PubMed

Çeliker, Metin; Özgür, Abdulkadir; Tümkaya, Levent; Terzi, Suat; Yılmaz, Mustafa; Kalkan, Yıldıray; Erdoğan, Ender

The use of mobile phones has become widespread in recent years. Although beneficial from the communication viewpoint, the electromagnetic fields generated by mobile phones may cause unwanted biological changes in the human body. In this study, we aimed to evaluate the effects of 2100MHz Global System for Mobile communication (GSM-like) electromagnetic field, generated by an electromagnetic fields generator, on the auditory system of rats by using electrophysiological, histopathologic and immunohistochemical methods. Fourteen adult Wistar albino rats were included in the study. The rats were divided randomly into two groups of seven rats each. The study group was exposed continuously for 30days to a 2100MHz electromagnetic fields with a signal level (power) of 5.4dBm (3.47mW) to simulate the talk mode on a mobile phone. The control group was not exposed to the aforementioned electromagnetic fields. After 30days, the Auditory Brainstem Responses of both groups were recorded and the rats were sacrificed. The cochlear nuclei were evaluated by histopathologic and immunohistochemical methods. The Auditory Brainstem Responses records of the two groups did not differ significantly. The histopathologic analysis showed increased degeneration signs in the study group (p=0.007). In addition, immunohistochemical analysis revealed increased apoptotic index in the study group compared to that in the control group (p=0.002). The results support that long-term exposure to a GSM-like 2100MHz electromagnetic fields causes an increase in neuronal degeneration and apoptosis in the auditory system. Copyright © 2016 Associação Brasileira de Otorrinolaringologia e Cirurgia Cérvico-Facial. Published by Elsevier Editora Ltda. All rights reserved.

Diverse Radiofrequency Sensitivity and Radiofrequency Effects of Mobile or Cordless Phone near Fields Exposure in Drosophila melanogaster

PubMed Central

Geronikolou, Styliani; Zimeras, Stelios; Davos, Constantinos H.; Michalopoulos, Ioannis; Tsitomeneas, Stephanos

2014-01-01

Introduction The impact of electromagnetic fields on health is of increasing scientific interest. The aim of this study was to examine how the Drosophila melanogaster animal model is affected when exposed to portable or mobile phone fields. Methods/Results Two experiments have been designed and performed in the same laboratory conditions. Insect cultures were exposed to the near field of a 2G mobile phone (the GSM 2G networks support and complement in parallel the 3G wide band or in other words the transmission of information via voice signals is served by the 2G technology in both mobile phones generations) and a 1880 MHz cordless phone both digitally modulated by human voice. Comparison with advanced statistics of the egg laying of the second generation exposed and non-exposed cultures showed limited statistical significance for the cordless phone exposed culture and statistical significance for the 900 MHz exposed insects. We calculated by physics, simulated and illustrated in three dimensional figures the calculated near fields of radiation inside the experimenting vials and their difference. Comparison of the power of the two fields showed that the difference between them becomes null when the experimental cylinder radius and the height of the antenna increase. Conclusions/Significance Our results suggest a possible radiofrequency sensitivity difference in insects which may be due to the distance from the antenna or to unexplored intimate factors. Comparing the near fields of the two frequencies bands, we see similar not identical geometry in length and height from the antenna and that lower frequencies tend to drive to increased radiofrequency effects. PMID:25402465

Current crowding mediated large contact noise in graphene field-effect transistors

PubMed Central

Karnatak, Paritosh; Sai, T. Phanindra; Goswami, Srijit; Ghatak, Subhamoy; Kaushal, Sanjeev; Ghosh, Arindam

2016-01-01

The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene–metal interface or the contact noise, on the performance of graphene field-effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field-effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000 cm2 V−1 s−1. Our phenomenological model for contact noise because of current crowding in purely two-dimensional conductors confirms that the contacts dominate the measured resistance noise in all graphene field-effect transistors in the two-probe or invasive four-probe configurations, and surprisingly, also in nearly noninvasive four-probe (Hall bar) configuration in the high-mobility devices. The microscopic origin of contact noise is directly linked to the fluctuating electrostatic environment of the metal–channel interface, which could be generic to two-dimensional material-based electronic devices. PMID:27929087

25th Anniversary Article: Organic Field-Effect Transistors: The Path Beyond Amorphous Silicon

PubMed Central

Sirringhaus, Henning

2014-01-01

Over the past 25 years, organic field-effect transistors (OFETs) have witnessed impressive improvements in materials performance by 3–4 orders of magnitude, and many of the key materials discoveries have been published in Advanced Materials. This includes some of the most recent demonstrations of organic field-effect transistors with performance that clearly exceeds that of benchmark amorphous silicon-based devices. In this article, state-of-the-art in OFETs are reviewed in light of requirements for demanding future applications, in particular active-matrix addressing for flexible organic light-emitting diode (OLED) displays. An overview is provided over both small molecule and conjugated polymer materials for which field-effect mobilities exceeding > 1 cm2 V–1 s–1 have been reported. Current understanding is also reviewed of their charge transport physics that allows reaching such unexpectedly high mobilities in these weakly van der Waals bonded and structurally comparatively disordered materials with a view towards understanding the potential for further improvement in performance in the future. PMID:24443057

Current crowding mediated large contact noise in graphene field-effect transistors

NASA Astrophysics Data System (ADS)

Karnatak, Paritosh; Sai, T. Phanindra; Goswami, Srijit; Ghatak, Subhamoy; Kaushal, Sanjeev; Ghosh, Arindam

2016-12-01

The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field-effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field-effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000 cm2 V-1 s-1. Our phenomenological model for contact noise because of current crowding in purely two-dimensional conductors confirms that the contacts dominate the measured resistance noise in all graphene field-effect transistors in the two-probe or invasive four-probe configurations, and surprisingly, also in nearly noninvasive four-probe (Hall bar) configuration in the high-mobility devices. The microscopic origin of contact noise is directly linked to the fluctuating electrostatic environment of the metal-channel interface, which could be generic to two-dimensional material-based electronic devices.

Cell Phones: Current Research Results

MedlinePlus

... possibly carcinogenic to humans": Coffee Extremely low frequency electromagnetic fields (power line frequency) Talc-based body powder ... Effects of Wireless Communication Devices World Health Organization: Electromagnetic Fields and Public Health: Mobile Phones International Agency ...

Field-effect transistors as electrically controllable nonlinear rectifiers for the characterization of terahertz pulses

NASA Astrophysics Data System (ADS)

Lisauskas, Alvydas; Ikamas, Kestutis; Massabeau, Sylvain; Bauer, Maris; ČibiraitÄ--, DovilÄ--; Matukas, Jonas; Mangeney, Juliette; Mittendorff, Martin; Winnerl, Stephan; Krozer, Viktor; Roskos, Hartmut G.

2018-05-01

We propose to exploit rectification in field-effect transistors as an electrically controllable higher-order nonlinear phenomenon for the convenient monitoring of the temporal characteristics of THz pulses, for example, by autocorrelation measurements. This option arises because of the existence of a gate-bias-controlled super-linear response at sub-threshold operation conditions when the devices are subjected to THz radiation. We present measurements for different antenna-coupled transistor-based THz detectors (TeraFETs) employing (i) AlGaN/GaN high-electron-mobility and (ii) silicon CMOS field-effect transistors and show that the super-linear behavior in the sub-threshold bias regime is a universal phenomenon to be expected if the amplitude of the high-frequency voltage oscillations exceeds the thermal voltage. The effect is also employed as a tool for the direct determination of the speed of the intrinsic TeraFET response which allows us to avoid limitations set by the read-out circuitry. In particular, we show that the build-up time of the intrinsic rectification signal of a patch-antenna-coupled CMOS detector changes from 20 ps in the deep sub-threshold voltage regime to below 12 ps in the vicinity of the threshold voltage.

Risk management policies and practices regarding radio frequency electromagnetic fields: results from a WHO survey.

PubMed

Dhungel, Amit; Zmirou-Navier, Denis; van Deventer, Emilie

2015-04-01

This study aims to describe current risk management practices and policies across the world in relation to personal exposures from devices emitting radiofrequency fields, environmental exposures from fixed installations and exposures in the work environment. Data from 86 countries representing all WHO regions were collected through a survey. The majority of countries (76.8 %) had set exposure limits for mobile devices, almost all (90.7 %) had set public exposure limits for fixed installations and 76.5 % had specified exposure limits for personnel in occupational settings. A number of other policies had been implemented at the national level, ranging from information provisions on how to reduce personal exposures and restrictions of usage for certain populations, such as children or pregnant women to prevention of access around base stations. This study suggests that countries with higher mobile subscriptions tend to have set radiofrequency exposure limits for mobile devices and to have provisions on exposure measurements about fixed installations. © The Author 2014. Published by Oxford University Press.

Effect of long-term (2 years) exposure of mouse brains to global system for mobile communication (GSM) radiofrequency fields on astrocytic immunoreactivity.

PubMed

Court-Kowalski, Stefan; Finnie, John W; Manavis, Jim; Blumbergs, Peter C; Helps, Stephen C; Vink, Robert

2015-04-01

This study was designed to determine whether long-term (2 years) brain exposure to mobile telephone radiofrequency (RF) fields produces any astrocytic activation as these glia react to a wide range of neural perturbations by astrogliosis. Using a purpose-designed exposure system at 900 MHz, mice were given a single, far-field whole body exposure at a specific absorption rate of 4 W/kg on five successive days per week for 104 weeks. Control mice were sham-exposed or freely mobile in a cage to control any stress caused by immobilization in the exposure module. Brains were perfusion-fixed with 4% paraformaldehyde and three coronal levels immunostained for glial fibrillary acidic protein (GFAP). These brain slices were then examined by light microscopy and the amount of this immunomarker quantified using a color deconvolution method. There was no change in astrocytic GFAP immunostaining in brains after long-term exposure to mobile telephony microwaves compared to control (sham-exposed or freely moving caged mice). It was concluded that long-term (2 years) exposure of murine brains to mobile telephone RF fields did not produce any astrocytic reaction (astrogliosis) detectable by GFAP immunostaining. © 2015 Wiley Periodicals, Inc.

Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Qing-Wen, Song; Xiao-Yan, Tang; Yan-Jing, He; Guan-Nan, Tang; Yue-Hu, Wang; Yi-Meng, Zhang; Hui, Guo; Ren-Xu, Jia; Hong-Liang, Lv; Yi-Men, Zhang; Yu-Ming, Zhang

2016-03-01

In this paper, the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFFETs) have been fabricated and characterized. A sandwich- (nitridation-oxidation-nitridation) type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H-SiC/SiO2 were examined by the measurement of HF I-V, G-V, and C-V over a range of frequencies. The ideal C-V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H-SiC was reduced to 2 × 1011 eV-1·cm-2, the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak field-effect mobility is about 32.5 cm2·V-1·s-1, and the maximum peak field-effect mobility of 38 cm2·V-1·s-1 was achieved in fabricated lateral 4H-SiC MOSFFETs. Projcet supported by the National Natural Science Foundation of China (Grant Nos. 61404098, 61176070, and 61274079), the Doctoral Fund of Ministry of Education of China (Grant Nos. 20110203110010 and 20130203120017), the National Key Basic Research Program of China (Grant No. 2015CB759600), and the Key Specific Projects of Ministry of Education of China (Grant No. 625010101).

Experimental studies on ion mobility in xenon-trimethylamine mixtures

NASA Astrophysics Data System (ADS)

Trindade, A. M. F.; Encarnação, P. M. C. C.; Escada, J.; Cortez, A. F. V.; Neves, P. N. B.; Conde, C. A. N.; Borges, F. I. G. M.; Santos, F. P.

2017-07-01

In this paper we present experimental results for ion reduced mobilities (K0) in gaseous trimethylamine, TMA—(CH3)3N, and xenon-TMA mixtures for reduced electric fields E/N between 7.5 and 60 Td and in the pressure range from 0.5 to 10 Torr, at room temperature. Both in the mixtures and in pure TMA only one peak was observed in the time of arrival spectra, which is believed to be due to two TMA ions with similar mass, (CH3)3N+ (59 u) and (CH3)2CH2N+ (58 u), whose mobility is indistinguishable in our experimental system. The possibility of ion cluster formation is also discussed. In pure TMA, for the E/N range investigated, an average value of 0.56 cm2V-1s-1 was obtained for the reduced mobility of TMA ions. For the studied mixtures, it was observed that even a very small amount of gaseous TMA (~0.2%) in xenon leads to the production of the above referred TMA ions or clusters. The reduced mobility value of this ion or ions in Xe-TMA mixtures is higher than the value in pure TMA: around 0.8 cm2V-1s-1 for TMA concentrations from 0.2% to about 10%, decreasing for higher TMA percentages, eventually converging to the reduced mobility value in pure TMA.

The use of cell phone and insight into its potential human health impacts.

PubMed

Kim, Ki-Hyun; Kabir, Ehsanul; Jahan, Shamin Ara

2016-04-01

The rapid evolution of mobile phone technology has raised public concern about its possible association with adverse health effects. Given the huge number of mobile phone users at present days, even simple adverse health effects could have major implications. This article reviews the present knowledge concerning the health effects stemming from the use of cellular phones by emphasizing adverse biological effects, epidemiological issues, and indirect health effects. A line of epidemiological evidence suggests that there is no concrete association between mobile phone radiation and cancer. The evidence regarding the occurrence of cancer due to exposure to the radio frequency energy of mobile phones is nonetheless conflicting. Consequently, long-term research in this field is necessary to account for the vital issue of this scientific research to the public in a meaningful way.

The assessment of electromagnetic field radiation exposure for mobile phone users.

PubMed

Buckus, Raimondas; Strukcinskiene, Birute; Raistenskis, Juozas

2014-12-01

During recent years, the widespread use of mobile phones has resulted in increased human ex- posure to electromagnetic field radiation and to health risks. Increased usage of mobile phones at the close proximity raises questions and doubts in safety of mobile phone users. The aim of the study was to assess an electromagnetic field radiation exposure for mobile phone users by measuring electromagnetic field strength in different settings at the distance of 1 to 30 cm from the mobile user. In this paper, the measurements of electric field strength exposure were conducted on different brand of mobile phones by the call-related factors: urban/rural area, indoor/outdoor setting and moving/stationary mode during calls. The different types of mobile phone were placed facing the field probe at 1 cm, 10 cm, 20 cm and 30 cm distance. The highest electric field strength was recorded for calls made in rural area (indoors) while the lowest electric field strength was recorded for calls made in urban area (outdoors). Calls made from a phone in a moving car gave a similar result like for indoor calls; however, calls made from a phone in a moving car exposed electric field strength two times more than that of calls in a standing (motionless) position. Electromagnetic field radiation depends on mobile phone power class and factors, like urban or rural area, outdoor or indoor, moving or motionless position, and the distance of the mobile phone from the phone user. It is recommended to keep a mobile phone in the safe distance of 10, 20 or 30 cm from the body (especially head) during the calls.

Testing scale-dependent effects of seminatural habitats on farmland biodiversity.

PubMed

Dainese, Matteo; Luna, Diego Inclán; Sitzia, Tommaso; Marini, Lorenzo

2015-09-01

The effectiveness of conservation interventions for maximizing biodiversity benefits from agri-environment schemes (AESs) is expected to depend on the quantity of seminatural habitats in the surrounding landscape. To verify this hypothesis, we developed a hierarchical sampling design to assess the effects of field boundary type and cover of seminatural habitats in the landscape at two nested spatial scales. We sampled three types of field boundaries with increasing structural complexity (grass margin, simple hedgerow, complex hedgerow) in paired landscapes with the presence or absence of seminatural habitats (radius 0.5 km), that in turn, were nested within 15 areas with different proportions of seminatural habitats at a larger spatial scale (10 X 10 km). Overall, 90 field boundaries were sampled across a Mediterranean'region (northeastern Italy). We considered species richness response across three different taxonomic groups: vascular plants, butterflies, and tachinid flies. No interactions between type of field boundary and surrounding landscape were found at either 0.5 and 10 km, indicating that the quality of field boundary had the same effect irrespective of the cover of seminatural habitats. At the local scale, extended-width grass margins yielded higher plant species richness, while hedgerows yielded higher species richness of butterflies and tachinids. At the 0.5-km landscape scale, the effect of the proportion of seminatural habitats was neutral for plants and tachinids, while butterflies were positively related to the proportion of forest. At the 10-km landscape scale, only butterflies responded positively to the proportion of seminatural habitats. Our study confirmed the importance of testing multiple scales when considering species from different taxa and with different mobility. We showed that the quality of field boundaries at the local scale was an important factor in enhancing farmland biodiversity. For butterflies, AESs should focus particular attention on preservation'of forest patches in agricultural landscapes within 0.5 kin, as well as the conservation of seminatural habitats at a wider landscape scale.

Experimental ion mobility measurements in Xe-C2H6

NASA Astrophysics Data System (ADS)

Perdigoto, J. M. C.; Cortez, A. F. V.; Veenhof, R.; Neves, P. N. B.; Santos, F. P.; Borges, F. I. G. M.; Conde, C. A. N.

2017-10-01

In this paper we present the results of the ion mobility measurements made in gaseous mixtures of xenon (Xe) with ethane (C2H6) for pressures ranging from 6 to 10 Torr (8-10.6 mbar) and for low reduced electric fields in the 10 Td to 25 Td range (2.4-6.1 kVṡcm-1ṡ bar-1), at room temperature. The time of arrival spectra revealed two peaks throughout the entire range studied which were attributed to ion species with 3-carbons (C3H5+, C3H6+ C3H8+ and C3H9+) and with 4-carbons (C4H7+, C4H9+ and C4H10+). Besides these, and for Xe concentrations above 70%, a bump starts to appear at the right side of the main peak for reduced electric fields higher than 20 Td, which was attributed to the resonant charge transfer of C2H6+ to C2H6 that affects the mobility of its ion products (C3H8+ and C3H9+). The time of arrival spectra for Xe concentrations of 20%, 50%, 70% and 90% are presented, together with the reduced mobilities as a function of the Xe concentration calculated from the peaks observed for the low reduced electric fields and pressures studied.

Short GSM mobile phone exposure does not alter human auditory brainstem response.

PubMed

Stefanics, Gábor; Kellényi, Lóránd; Molnár, Ferenc; Kubinyi, Györgyi; Thuróczy, György; Hernádi, István

2007-11-12

There are about 1.6 billion GSM cellular phones in use throughout the world today. Numerous papers have reported various biological effects in humans exposed to electromagnetic fields emitted by mobile phones. The aim of the present study was to advance our understanding of potential adverse effects of the GSM mobile phones on the human hearing system. Auditory Brainstem Response (ABR) was recorded with three non-polarizing Ag-AgCl scalp electrodes in thirty young and healthy volunteers (age 18-26 years) with normal hearing. ABR data were collected before, and immediately after a 10 minute exposure to 900 MHz pulsed electromagnetic field (EMF) emitted by a commercial Nokia 6310 mobile phone. Fifteen subjects were exposed to genuine EMF and fifteen to sham EMF in a double blind and counterbalanced order. Possible effects of irradiation was analyzed by comparing the latency of ABR waves I, III and V before and after genuine/sham EMF exposure. Paired sample t-test was conducted for statistical analysis. Results revealed no significant differences in the latency of ABR waves I, III and V before and after 10 minutes of genuine/sham EMF exposure. The present results suggest that, in our experimental conditions, a single 10 minute exposure of 900 MHz EMF emitted by a commercial mobile phone does not produce measurable immediate effects in the latency of auditory brainstem waves I, III and V.

Evidence That Calls-Based and Mobility Networks Are Isomorphic

PubMed Central

Coscia, Michele; Hausmann, Ricardo

2015-01-01

Social relations involve both face-to-face interaction as well as telecommunications. We can observe the geography of phone calls and of the mobility of cell phones in space. These two phenomena can be described as networks of connections between different points in space. We use a dataset that includes billions of phone calls made in Colombia during a six-month period. We draw the two networks and find that the call-based network resembles a higher order aggregation of the mobility network and that both are isomorphic except for a higher spatial decay coefficient of the mobility network relative to the call-based network: when we discount distance effects on the call connections with the same decay observed for mobility connections, the two networks are virtually indistinguishable. PMID:26713730

Increased mobility and on/off ratio in organic field-effect transistors using low-cost guanine-pentacene multilayers

NASA Astrophysics Data System (ADS)

Shi, Wei; Zheng, Yifan; Taylor, André D.; Yu, Junsheng; Katz, Howard E.

2017-07-01

Layer-by-layer deposited guanine and pentacene in organic field-effect transistors (OFETs) is introduced. Through adjusting the layer thickness ratio of guanine and pentacene, the tradeoff of two electronic parameters in OFETs, charge carrier mobility and current on/off ratio, was controlled. The charge mobility was enhanced by depositing pentacene over and between guanine layers and by increasing the proportion of pentacene in the layer-by-layer system, while the current on/off ratio was increased via the decreased off current induced by the guanine layers. The tunable device performance was mainly ascribed to the trap and dopant neutralizing properties of the guanine layers, which would decrease the density of free hydroxyl groups in the OFETs. Furthermore, the cost of the devices could be reduced remarkably via the adoption of low-cost guanine.

Dependence of interface charge trapping on channel engineering in pentacene field effect transistors.

PubMed

Lee, Sunwoo; Park, Junghyuck; Park, In-Sung; Ahn, Jinho

2014-07-01

We investigate the dependence of charge carrier mobility by trap states at various interface regions through channel engineering. Prior to evaluation of interface trap density, the electrical performance in pentaene field effect transistors (FET) with high-k gate oxide are also investigated depending on four channel engineering. As a channel engineering, gas treatment, coatings of thin polymer layer, and chemical surface modification using small molecules were carried out. After channel engineering, the performance of device as well as interface trap density calculated by conductance method are remarkably improved. It is found that the reduced interface trap density is closely related to decreasing the sub-threshold swing and improving the mobility. Particularly, we also found that performance of device such as mobility, subthreshold swing, and interface trap density after gas same is comparable to those of OTS.

Association of Exposure to Radio-Frequency Electromagnetic Field Radiation (RF-EMFR) Generated by Mobile Phone Base Stations with Glycated Hemoglobin (HbA1c) and Risk of Type 2 Diabetes Mellitus.

PubMed

Meo, Sultan Ayoub; Alsubaie, Yazeed; Almubarak, Zaid; Almutawa, Hisham; AlQasem, Yazeed; Hasanato, Rana Muhammed

2015-11-13

Installation of mobile phone base stations in residential areas has initiated public debate about possible adverse effects on human health. This study aimed to determine the association of exposure to radio frequency electromagnetic field radiation (RF-EMFR) generated by mobile phone base stations with glycated hemoglobin (HbA1c) and occurrence of type 2 diabetes mellitus. For this study, two different elementary schools (school-1 and school-2) were selected. We recruited 159 students in total; 96 male students from school-1, with age range 12-16 years, and 63 male students with age range 12-17 years from school-2. Mobile phone base stations with towers existed about 200 m away from the school buildings. RF-EMFR was measured inside both schools. In school-1, RF-EMFR was 9.601 nW/cm² at frequency of 925 MHz, and students had been exposed to RF-EMFR for a duration of 6 h daily, five days in a week. In school-2, RF-EMFR was 1.909 nW/cm² at frequency of 925 MHz and students had been exposed for 6 h daily, five days in a week. 5-6 mL blood was collected from all the students and HbA1c was measured by using a Dimension Xpand Plus Integrated Chemistry System, Siemens. The mean HbA1c for the students who were exposed to high RF-EMFR was significantly higher (5.44 ± 0.22) than the mean HbA1c for the students who were exposed to low RF-EMFR (5.32 ± 0.34) (p = 0.007). Moreover, students who were exposed to high RF-EMFR generated by MPBS had a significantly higher risk of type 2 diabetes mellitus (p = 0.016) relative to their counterparts who were exposed to low RF-EMFR. It is concluded that exposure to high RF-EMFR generated by MPBS is associated with elevated levels of HbA1c and risk of type 2 diabetes mellitus.

Silicon carbide: A unique platform for metal-oxide-semiconductor physics

NASA Astrophysics Data System (ADS)

Liu, Gang; Tuttle, Blair R.; Dhar, Sarit

2015-06-01

A sustainable energy future requires power electronics that can enable significantly higher efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide (4H-SiC) is one of the most technologically advanced wide bandgap semiconductor that can outperform conventional silicon in terms of power handling, maximum operating temperature, and power conversion efficiency in power modules. While SiC Schottky diode is a mature technology, SiC power Metal Oxide Semiconductor Field Effect Transistors are relatively novel and there is large room for performance improvement. Specifically, major initiatives are under way to improve the inversion channel mobility and gate oxide stability in order to further reduce the on-resistance and enhance the gate reliability. Both problems relate to the defects near the SiO2/SiC interface, which have been the focus of intensive studies for more than a decade. Here we review research on the SiC MOS physics and technology, including its brief history, the state-of-art, and the latest progress in this field. We focus on the two main scientific problems, namely, low channel mobility and bias temperature instability. The possible mechanisms behind these issues are discussed at the device physics level as well as the atomic scale, with the support of published physical analysis and theoretical studies results. Some of the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport is reviewed.

Combined electrical transport and capacitance spectroscopy of a MoS2-LiNbO3 field effect transistor

NASA Astrophysics Data System (ADS)

Michailow, Wladislaw; Schülein, Florian J. R.; Möller, Benjamin; Preciado, Edwin; Nguyen, Ariana E.; von Son, Gretel; Mann, John; Hörner, Andreas L.; Wixforth, Achim; Bartels, Ludwig; Krenner, Hubert J.

2017-01-01

We have measured both the current-voltage ( ISD - VGS ) and capacitance-voltage (C- VGS ) characteristics of a MoS2-LiNbO3 field effect transistor. From the measured capacitance, we calculate the electron surface density and show that its gate voltage dependence follows the theoretical prediction resulting from the two-dimensional free electron model. This model allows us to fit the measured ISD - VGS characteristics over the entire range of VGS . Combining this experimental result with the measured current-voltage characteristics, we determine the field effect mobility as a function of gate voltage. We show that for our device, this improved combined approach yields significantly smaller values (more than a factor of 4) of the electron mobility than the conventional analysis of the current-voltage characteristics only.

Determination of the mobility profile in GaAs-MESFETs. Thesis

NASA Technical Reports Server (NTRS)

Prost, W.

1985-01-01

A process for measuring charge carrier mobility for gallium-arsenide metal semiconductor field effect transistors is described in an attempt to optimize the relationship between this factor and production. The measuring procedure allows an actual determination of local mobility in the channel. The physical basis for the process and features of the measuring room are outlined. The measuring technique is described and recommendations are made for setting measuring parameters.

Mobile mental health: a challenging research agenda.

PubMed

Olff, Miranda

2015-01-01

The field of mobile health ("m-Health") is evolving rapidly and there is an explosive growth of psychological tools on the market. Exciting high-tech developments may identify symptoms, help individuals manage their own mental health, encourage help seeking, and provide both preventive and therapeutic interventions. This development has the potential to be an efficient cost-effective approach reducing waiting lists and serving a considerable portion of people globally ("g-Health"). However, few of the mobile applications (apps) have been rigorously evaluated. There is little information on how valid screening and assessment tools are, which of the mobile intervention apps are effective, or how well mobile apps compare to face-to-face treatments. But how feasible is rigorous scientific evaluation with the rising demands from policy makers, business partners, and users for their quick release? In this paper, developments in m-Health tools-targeting screening, assessment, prevention, and treatment-are reviewed with examples from the field of trauma and posttraumatic stress disorder. The academic challenges in developing and evaluating m-Health tools are being addressed. Evidence-based guidance is needed on appropriate research designs that may overcome some of the public and ethical challenges (e.g., equity, availability) and the market-driven wish to have mobile apps in the "App Store" yesterday rather than tomorrow.

Synthesis of large-area multilayer hexagonal boron nitride for high material performance.

PubMed

Kim, Soo Min; Hsu, Allen; Park, Min Ho; Chae, Sang Hoon; Yun, Seok Joon; Lee, Joo Song; Cho, Dae-Hyun; Fang, Wenjing; Lee, Changgu; Palacios, Tomás; Dresselhaus, Mildred; Kim, Ki Kang; Lee, Young Hee; Kong, Jing

2015-10-28

Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young's modulus: 1.16 ± 0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ∼ 24,000 cm(2) V(-1) s(-1) at room temperature, higher than that (∼ 13,000 (2) V(-1) s(-1)) with exfoliated h-BN. By placing additional h-BN on a SiO2/Si substrate for a MoS2 (WSe2) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times.

The Lure of Internationalization: Paradoxical Discourses of Transnational Student Mobility, Linguistic Diversity and Cross-Cultural Exchange

ERIC Educational Resources Information Center

Fabricius, Anne H.; Mortensen, Janus; Haberland, Hartmut

2017-01-01

This paper scrutinizes a set of paradoxes arising from a mismatch between contemporary discourses that praise and promote mobility in and internationalization of higher education, and the everyday effects of mobility and internationalization on university teaching and learning practice. We begin with a general characterization of the discourse of…

Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jang, Jun Tae; Kim, Dong Myong; Choi, Sung-Jin

The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping.

Population mobility reductions associated with travel restrictions during the Ebola epidemic in Sierra Leone: use of mobile phone data.

PubMed

Peak, Corey M; Wesolowski, Amy; Zu Erbach-Schoenberg, Elisabeth; Tatem, Andrew J; Wetter, Erik; Lu, Xin; Power, Daniel; Weidman-Grunewald, Elaine; Ramos, Sergio; Moritz, Simon; Buckee, Caroline O; Bengtsson, Linus

2018-06-26

Travel restrictions were implementeded on an unprecedented scale in 2015 in Sierra Leone to contain and eliminate Ebola virus disease. However, the impact of epidemic travel restrictions on mobility itself remains difficult to measure with traditional methods. New 'big data' approaches using mobile phone data can provide, in near real-time, the type of information needed to guide and evaluate control measures. We analysed anonymous mobile phone call detail records (CDRs) from a leading operator in Sierra Leone between 20 March and 1 July in 2015. We used an anomaly detection algorithm to assess changes in travel during a national 'stay at home' lockdown from 27 to 29 March. To measure the magnitude of these changes and to assess effect modification by region and historical Ebola burden, we performed a time series analysis and a crossover analysis. Routinely collected mobile phone data revealed a dramatic reduction in human mobility during a 3-day lockdown in Sierra Leone. The number of individuals relocating between chiefdoms decreased by 31% within 15 km, by 46% for 15-30 km and by 76% for distances greater than 30 km. This effect was highly heterogeneous in space, with higher impact in regions with higher Ebola incidence. Travel quickly returned to normal patterns after the restrictions were lifted. The effects of travel restrictions on mobility can be large, targeted and measurable in near real-time. With appropriate anonymization protocols, mobile phone data should play a central role in guiding and monitoring interventions for epidemic containment.

Molecular mobility in amorphous state: Implications on physical stability

NASA Astrophysics Data System (ADS)

Bhardwaj, Sunny Piyush

Amorphous pharmaceuticals are desirable in drug development due to their advantageous biopharmaceutical properties of higher apparent aqueous solubility and dissolution rate. The main obstacle in their widespread use, however, is their higher physicochemical instability than their crystalline counterparts. The goal of the present research project was to investigate correlations between the molecular mobility and physical stability in model amorphous compounds. The objective was to identify the specific mobility which is responsible for the physical instability in each case. This will potentially enable the development of effective strategies for the stabilization of amorphous pharmaceuticals. Moreover, these correlations can be used to develop predictive models for the stability at the pharmaceutically relevant storage conditions. Subtraction of dc conductivity enabled the comprehensive characterization of molecular mobility in amorphous trehalose. This was followed by investigation of correlation between crystallization behavior and different relaxations. Global mobility was found to be strongly coupled to both crystallization onset time and rate. Different preparation methods imparted different mobility states to amorphous trehalose which was postulated to be the reason for the significant physical stability differences. Predictive models were developed and a good agreement was found between the predicted and the experimental crystallization onset times at temperatures around and below the glass transition temperature (Tg). Effect of annealing was investigated on water sorption, enthalpic recovery and dielectric relaxation times in amorphous trehalose. Global mobility was found to be linearly correlated to the water sorption potential which enabled the development of predictive models. Global mobility was also found to be strongly correlated to physical instability in amorphous itraconazole. Effect of polymer (PVP and HPMCAS) on itraconazole mobility and stability was also evaluated. Global mobility was found to be correlated to stability in both the solid dispersions. HPMCAS was found to be a better stabilizer than PVP due to its pronounced effect on global mobility.

[Electromagnetic fields of mobile telephone systems--thresholds, effects and risks for cochlear implant patients and healthy people].

PubMed

Bischof, F; Langer, J; Begall, K

2008-11-01

Every day life is detectably affected by manifold natural sources of electromagnetic fields (EMF), e. g. infrared radiation, light and the terrestrial magnetic field. However, there is still uncertainty about the consequences or hazards of artificial EMF, which emerge from mobile phone or wireless network (wireless local area network [WLAN]) services, for instance. Following recommendations of the International Commission on Non-Ionizing Radiation Protection (ICNIRP) the German Commission on Radiation Protection (SSK) defined corresponding thresholds for high frequency electromagnetic fields (HF-EMF) in 2003. By observing those thresholds HF-EMF is thought to be innocent so far. However, there is still controversial discussion about induction of cancer or neurovegetative symptoms due to inconsistent study results. Patients with cochlea implants are of particular interest within the speciality of otorhinolaryngology due to specific hazards, which arise during mobile telephone use from the distance between brain and inductive metal implants (electrode) on the one hand and the electronic system of the cochlear implant and the source of HF-EMF on the other hand. Besides many studies about the impact of HF-EMF on common welfare, there are only very few surveys (n = 6) covering the effects on patients with cochlear implants. The purpose of this paper is to overview sources, thresholds and subsequently harmful or harmless effects of HFEMF. Due to the current state of knowledge about the impact of mobile phone use on health, we assume, that HF-EMF are harmless both for healthy people and patients with cochlea implants, provided that legal thresholds are observed.

Validation of self-reported start year of mobile phone use in a Swedish case-control study on radiofrequency fields and acoustic neuroma risk.

PubMed

Pettersson, David; Bottai, Matteo; Mathiesen, Tiit; Prochazka, Michaela; Feychting, Maria

2015-01-01

The possible effect of radiofrequency exposure from mobile phones on tumor risk has been studied since the late 1990s. Yet, empirical information about recall of the start of mobile phone use among adult cases and controls has never been reported. Limited knowledge about recall errors hampers interpretations of the epidemiological evidence. We used network operator data to validate the self-reported start year of mobile phone use in a case-control study of mobile phone use and acoustic neuroma risk. The answers of 96 (29%) cases and 111 (22%) controls could be included in the validation. The larger proportion of cases reflects a more complete and detailed reporting of subscription history. Misclassification was substantial, with large random errors, small systematic errors, and no significant differences between cases and controls. The average difference between self-reported and operator start year was -0.62 (95% confidence interval: -1.42, 0.17) years for cases and -0.71 (-1.50, 0.07) years for controls, standard deviations were 3.92 and 4.17 years, respectively. Agreement between self-reported and operator-recorded data categorized into short, intermediate and long-term use was moderate (kappa statistic: 0.42). Should an association exist, dilution of risk estimates and distortion of exposure-response patterns for time since first mobile phone use could result from the large random errors in self-reported start year. Retrospective collection of operator data likely leads to a selection of "good reporters", with a higher proportion of cases. Thus, differential recall cannot be entirely excluded.

Mobile Health Applications for Diabetes and Endocrinology: Promise and Peril?

PubMed Central

Eng, Donna S; Lee, Joyce M.

2013-01-01

We are in the midst of what some have called a “mobile health revolution”. Medical applications ("apps") for mobile phones are proliferating in the marketplace and clinicians are likely encountering patients with questions about the medical value of these apps. We conducted a review of medical apps focused on endocrine disease. We found a higher percentage of relevant apps in our searches of the iPhone app store compared with the Android marketplace. For our diabetes search in the iPhone store, the majority of apps (33%) focused on health tracking (blood sugars, insulin doses, carbohydrates), requiring manual entry of health data. Only two apps directly inputted blood sugars from glucometers attached to the mobile phone. The remainder of diabetes apps were teaching/training apps (22%), food reference databases (8%), social blogs/forums (5%), and physician directed apps (8%). We found a number of insulin dose calculator apps which technically meet criteria for being a medically regulated mobile application, but did not find evidence for FDA-approval despite their availability to consumers. Far fewer apps were focused on other endocrine disease and included medical reference for the field of endocrinology, access to endocrine journals, height predictors, medication trackers, and fertility apps. Although mobile health apps have great potential for improving chronic disease care, they face a number of challenges including lack of evidence of clinical effectiveness, lack of integration with the health care delivery system, the need for formal evaluation and review and organized searching for health apps, and potential threats to safety and privacy. PMID:23627878

Simulation of the effects of sub-breakdown electric fields on the chemical kinetics in nonpremixed counterflow methane/air flames

NASA Astrophysics Data System (ADS)

Belhi, Memdouh; Im, Hong; Computational Reacting Flows Laboratory, Clean Combustion Research Center Team

2017-11-01

The effects of an electric field on the combustion kinetics in nonpremixed counterflow methane/air flames were investigated via one-dimensional numerical simulations. A classical fluid model coupling Poison's equation with transport equations for combustion species and electric field-induced particles was used. A methane-air reaction mechanism accounting for the natural ionization in flames was combined with a set of reactions that describe the formation of active particles induced by the electric field. Kinetic parameters for electron-impact reactions and transport coefficients of electrons were modeled as functions of reduced electric field via solutions to the Boltzmann kinetic equation using the BOLSIG code. Mobility of ions was computed based on the (n,6,4) and coulomb interaction potentials, while the diffusion coefficient was approximated from the mobility using Einstein relation. Contributions of electron dissociation, excitation and ionization processes were characterized quantitatively. An analysis to identify the plasma regime where the electric field can alter the combustion kinetic was proposed.

Dispersive elastic properties of Dzyaloshinskii domain walls

NASA Astrophysics Data System (ADS)

Pellegren, James; Lau, Derek; Sokalski, Vincent

Recent studies on the asymmetric field-driven growth of magnetic bubble domains in perpendicular thin films exhibiting an interfacial Dzyaloshinskii-Moriya interaction (DMI) have provided a wealth of experimental evidence to validate models of creep phenomena, as key properties of the domain wall (DW) can be altered with the application of an external in-plane magnetic field. While asymmetric growth behavior has been attributed to the highly anisotropic DW energy, σ (θ) , which results from the combination of DMI and the in-plane field, many experimental results remain anomalous. In this work, we demonstrate that the anisotropy of DW energy alters the elastic response of the DW as characterized by the surface stiffness, σ (θ) = σ (θ) + σ (θ) , and evaluate the impact of this stiffness on the creep law. We find that at in-plane fields larger than and antiparallel to the effective field due to DMI, the DW stiffness decreases rapidly, suggesting that higher energy walls can actually become more mobile than their low energy counterparts. This result is consistent with experiments on CoNi multilayer films where velocity curves for domain walls with DMI fields parallel and antiparallel to the applied field cross over at high in-plane fields.

Do mobile family planning clinics facilitate vasectomy use in Nepal?

PubMed

Padmadas, Sabu S; Amoako Johnson, Fiifi; Leone, Tiziana; Dahal, Govinda P

2014-06-01

Nepal has a distinct topography that makes reproductive health and family planning services difficult to access, particularly in remote mountain and hill regions where over a quarter of modern contraceptive users rely exclusively on vasectomy. A three-level random intercept logistic regression analysis was applied on data from the 2011 Nepal Demographic and Health Survey to investigate the extent of influence of mobile family planning clinics on the odds of a male or a female sterilization, adjusting for relevant characteristics including ecological differences and random effects. The analyses included a sample of 2014 sterilization users, considering responses from currently married women of reproductive ages. The odds of a male sterilization were significantly higher in a mobile clinic than those in a government hospital (odds ratio, 1.65; 95% confidence interval, 1.21-2.25). The effects remained unaltered and statistically significant after adjusting for sociodemographic and clustering effects. Random effects were highly significant, which suggest the extent of heterogeneity in vasectomy use at the community and district levels. The odds of vasectomy use in mobile clinics were significantly higher among couples residing in hill and mountain regions and among those with three or more sons or those with only daughters. Mobile clinics significantly increase the uptake of vasectomy in hard-to-reach areas of Nepal. Reproductive health interventions should consider mobile clinics as an effective strategy to improve access to male-based modern methods and enhance gender equity in family planning. Family planning interventions in hard-to-reach communities could consider mobile clinic as an effective strategy to promote male-based modern methods. Improving access to vasectomy could substantially reduce unmet need for family planning in countries experiencing rapid fertility transition. Copyright © 2014 Elsevier Inc. All rights reserved.

Space charge dynamic of irradiated cyanate ester/epoxy at cryogenic temperatures

NASA Astrophysics Data System (ADS)

Wang, Shaohe; Tu, Youping; Fan, Linzhen; Yi, Chengqian; Wu, Zhixiong; Li, Laifeng

2018-03-01

Glass fibre reinforced polymers (GFRPs) have been widely used as one of the main electrical insulating structures for superconducting magnets. A new type of GFRP insulation material using cyanate ester/epoxy resin as a matrix was developed in this study, and the samples were irradiated by Co-60 for 1 MGy and 5 MGy dose. Space charge distributed within the sample were tested using the pulsed electroacoustic method, and charge concentration was found at the interfaces between glass fibre and epoxy resin. Thermally stimulated current (TSC) and dc conduction current were also tested to evaluate the irradiation effect. It was supposed that charge mobility and density were suppressed at the beginning due to the crosslinking reaction, and for a higher irradiation dose, molecular chain degradation dominated and led to more sever space charge accumulation at interfaces which enhance the internal electric field higher than the external field, and transition field for conduction current was also decreased by irradiation. Space charge dynamic at cryogenic temperature was revealed by conduction current and TSC, and space charge injection was observed for the irradiated samples at 225 K, which was more obvious for the irradiated samples.

Infrared thermography based studies on mobile phone induced heating

NASA Astrophysics Data System (ADS)

Lahiri, B. B.; Bagavathiappan, S.; Soumya, C.; Jayakumar, T.; Philip, John

2015-07-01

Here, we report the skin temperature rise due to the absorption of radio frequency (RF) energy from three handheld mobile phones using infrared thermography technique. Experiments are performed under two different conditions, viz. when the mobile phones are placed in soft touch with the skin surface and away from the skin surface. Additionally, the temperature rise of mobile phones during charging, operation and simultaneous charging and talking are monitored under different exposure conditions. It is observed that the temperature of the cheek and ear regions monotonically increased with time during the usage of mobile phones and the magnitude of the temperature rise is higher for the mobile phone with higher specific absorption rate. The increase in skin temperature is higher when the mobile phones are in contact with the skin surface due to the combined effect of absorption of RF electromagnetic power and conductive heat transfer. The increase in the skin temperature in non-contact mode is found to be within the safety limit of 1 °C. The measured temperature rise is in good agreement with theoretical predictions. The empirical equation obtained from the temperature rise on the cheek region of the subjects correlates well with the specific absorption rate of the mobile phones. Our study suggests that the use of mobile phones in non-contact mode can significantly lower the skin temperature rise during its use and hence, is safer compared to the contact mode.

Electrostatically Induced Carbon Nanotube Alignment for Polymer Composite Applications

NASA Astrophysics Data System (ADS)

Chapkin, Wesley Aaron

We have developed a non-invasive technique utilizing polarized Raman spectroscopy to measure changes in carbon nanotube (CNT) alignment in situ and in real time in a polymer matrix. With this technique, we have confirmed the prediction of faster alignment for CNTs in higher electric fields. Real-time polarized Raman spectroscopy also allows us to demonstrate the loss of CNT alignment that occurs after the electric field is removed, which reveals the need for fast polymerization steps or the continued application of the aligning force during polymerization to lock in CNT alignment. Through a study on the effect of polymer viscosity on the rate of CNT alignment, we have determined that shear viscosity serves as the controlling mechanism for CNT rotation. This finding matches literature modeling of rigid rod mobility in a polymer melt and demonstrates that the rotational mobility of CNTs can be explained by a continuum model even though the diameters of single-walled CNTs are 1-2 nm. The viscosity dependence indicates that the manipulation of temperature (and indirectly viscosity) will have a direct effect on the rate of CNT alignment, which could prove useful in expediting the manufacturing of CNT-reinforced composites cured at elevated temperatures. Using real-time polarized Raman spectroscopy, we also demonstrate that electric fields of various strengths lead not only to different speeds of CNT rotation but also to different degrees of alignment. We hypothesize that this difference in achievable alignment results from discrete populations of nanotubes based on their length. The results are then explained by balancing the alignment energy for a given electric field strength with the randomizing thermal energy of the system. By studying the alignment dynamics of different CNT length distributions, we show that different degrees of alignment achieved as a function of the applied electric field strength are directly related to the square of the nanotube length. This finding matches an electrostatic potential energy model for CNT rotation. Lastly, we investigate the effects of conductive carbon fibers on electrostatically induced alignment of CNTs within carbon fiber composites. The relative electric field strength throughout the composite is modeled using COMSOL Multiphysics. We show the ability to generate enhanced electric field gradients within the gaps between carbon fibers for various fiber orientations. Using polarized Raman spectroscopy, increased levels of CNT alignment are observed between carbon fiber tows, which is consistent with the modeled higher electric field strengths in these regions. These findings could potentially lead to the development of carbon fiber composites with CNT additions that selectively enhance the composite properties outside the carbon fiber interphase in the neat epoxy.

Radiation effects on hole drift mobility in polysilanes

NASA Astrophysics Data System (ADS)

Seki, Shu; Shibata, Hiromi; Yoshida, Yoichi; Ishigure, Kenkichi; Tagawa, Seiichi

1997-03-01

The radiation effects on hole drift mobility in polysilane derivatives were studied in the present paper. The values of hole drift mobility (about 10 -4 cm 2/V·s) obtained by the DC Time-of-Flight (TOF) measurement were improved by ion beam irradiation for poly(methylphenylsilane) (PMPS) and poly(di-n-hexylsilane) (PDHS). The irradiated PMPS showed five times higher values of hole drift mobility than the non irradiated one. Their low photo-induced carrier yield, one of the highest barrier to use polysilanes as photoconductors, was also improved by the irradiation. The mechanism of the mobility improvement will be discussed in relation to the model of changes in the silicon skeleton structure induced by the radiation.

The Millennium Development Goals Agenda: Constraints of Culture, Economy, and Empowerment in Influencing the Social Mobility of Pakistani Girls on Mathematics and Science Related Higher Education Courses in Universities in Pakistan

ERIC Educational Resources Information Center

Mujtaba, Tamjid; Reiss, Michael J.

2015-01-01

The third of the eight Millennium Development Goals is to promote gender equality and empower women. This article discusses the factors that are associated with 31 female higher education students' choices and aspirations to pursue education and careers in mathematics and science-related fields. The analysis is based on semistructured interviews.…

Mobile Soil Moisture Management in High Elevations: Applications of the Cosmic Ray Neutron Sensor Technique for Estimating Field Scale Soil Water Content

NASA Astrophysics Data System (ADS)

Avery, William Alexander; Wahbi, Ammar; Dercon, Gerd; Heng, Lee; Franz, Trenton; Strauss, Peter

2017-04-01

Meeting the demands of a growing global population is one of the principal challenges of the 21st century. Meeting this challenge will require an increase in food production around the world. Currently, approximately two thirds of freshwater use by humans is devoted to agricultural production. As such, an expansion of agricultural activity will place additional pressure on freshwater resources. The incorporation of novel soil moisture sensing technologies into agricultural practices carries the potential to make agriculture more precise thus increasing water use efficiency. One such technology is known as the Cosmic Ray Neutron Sensor (CRNS). The CRNS technique is capable of quantifying soil moisture on a large spatial scale ( 30 ha) compared with traditional point based in-situ soil moisture sensing technology. Recent years have seen the CRNS to perform well when deployed in agricultural environments at low to mid elevations. However, the performance of the CRNS technique in higher elevations, particularly alpine environments, has yet to be demonstrated or understood. Mountainous environments are more vulnerable to changing climates and land use practices, yet are often responsible for the headwaters of major river systems sustaining cultivated lands or support important agricultural activity on their own. As such, the applicability of a mobile version of the CRNS technology in high alpine environments needs to be explored. This research details the preliminary efforts to determine if established calibration and validation techniques associated with the use of the CRNS can be applied at higher elevations. Field work was conducted during the summer of 2016 in the mountains of western Austria. Initial results indicate that the relationship between in-situ soil moisture data determined via traditional soil sampling and soil moisture data determined via the mobile CRNS is not clear. It is possible that the increasing intensity of incoming cosmic rays at higher altitudes may have an effect on the signal of the CRNS, however, more work is required to fully understand this phenomenon and is scheduled to resume in the summer of 2017.

Value-based design for the elderly: An application in the field of mobility aids.

PubMed

Boerema, Simone T; van Velsen, Lex; Vollenbroek-Hutten, Miriam M R; Hermens, Hermie J

2017-01-01

In the aging society, the need for the elderly to remain mobile and independent is higher than ever. However, many aids supporting mobility often fail to target real needs and lack acceptance. The aim of this study is to demonstrate how value-based design can contribute to the design of mobility aids that address real needs and thus, lead to high acceptance. We elicited values, facilitators, and barriers of mobility of older adults via ten in-depth interviews. Next, we held co-creation sessions, resulting in several designs of innovative mobility aids, which were evaluated for acceptance via nine in-depth interviews. The interviews resulted in a myriad of key values, such as "independence from family" and "doing their own groceries." Design sessions resulted in three designs for a wheeled walker. Their acceptance was rather low. Current mobility device users were more eager to accept the designs than non-users. The value-based approach offers designers a close look into the lives of the elderly, thereby opening up a wide range of innovation possibilities that better fit their actual needs. Product service systems seem to be a promising focus for targeting human needs in mobility device design.

Nonlinear THz absorption and cyclotron resonance in InSb

NASA Astrophysics Data System (ADS)

Heffernan, Kate; Yu, Shukai; Talbayev, Diyar

The emergence of coherent high-field terahertz (THz) sources in the past decade has allowed the exploration of nonlinear light-matter interaction at THz frequencies. Nonlinear THz response of free electrons in semiconductors has received a great deal of attention. Such nonlinear phenomena as saturable absorption and self-phase modulation have been reported. InSb is a narrow-gap (bandgap 0.17 eV) semiconductor with a very low electron effective mass and high electron mobility. Previous high-field THz work on InSb reported the observation of ultrafast electron cascades via impact ionization. We study the transmission of an intense THz electric field pulse by an InSb wafer at different incident THz amplitudes and 10 K temperature. Contrary to previous reports, we observe an increased transmission at higher THz field. Our observation appears similar to the saturable THz absorption reported in other semiconductors. Along with the increased absorption, we observe a strong modulation of the THz phase at high incident fields, most likely due to the self-phase modulation of the THz pulse. We also study the dependence of the cyclotron resonance on the incident THz field amplitude. The cyclotron resonance exhibits a lower strength and frequency at the higher incident THz field. The work at Tulane was supported by the Louisiana Board of Regents through the Board of Regents Support Fund Contract No. LEQSF(2012-15)-RD-A-23 and through the Pilot Funding for New Research (PFund) Contract No. LEQSF-EPS(2014)-PFUND-378.

Mobile phone base station radiation does not affect neoplastic transformation in BALB/3T3 cells.

PubMed

Hirose, H; Suhara, T; Kaji, N; Sakuma, N; Sekijima, M; Nojima, T; Miyakoshi, J

2008-01-01

A large-scale in vitro study focusing on low-level radiofrequency (RF) fields from mobile radio base stations employing the International Mobile Telecommunication 2000 (IMT-2000) cellular system was conducted to test the hypothesis that modulated RF fields affect malignant transformation or other cellular stress responses. Our group previously reported that DNA strand breaks were not induced in human cells exposed to 2.1425 GHz Wideband Code Division Multiple Access (W-CDMA) radiation up to 800 mW/kg from mobile radio base stations employing the IMT-2000 cellular system. In the current study, BALB/3T3 cells were continuously exposed to 2.1425 GHz W-CDMA RF fields at specific absorption rates (SARs) of 80 and 800 mW/kg for 6 weeks and malignant cell transformation was assessed. In addition, 3-methylcholanthrene (MCA)-treated cells were exposed to RF fields in a similar fashion, to assess for effects on tumor promotion. Finally, the effect of RF fields on tumor co-promotion was assessed in BALB/3T3 cells initiated with MCA and co-exposed to 12-O-tetradecanoylphorbol-13-acetate (TPA). At the end of the incubation period, transformation dishes were fixed, stained with Giemsa, and scored for morphologically transformed foci. No significant differences in transformation frequency were observed between the test groups exposed to RF signals and the sham-exposed negative controls in the non-, MCA-, or MCA plus TPA-treated cells. Our studies found no evidence to support the hypothesis that RF fields may affect malignant transformation. Our results suggest that exposure to low-level RF radiation of up to 800 mW/kg does not induce cell transformation, which causes tumor formation. (c) 2007 Wiley-Liss, Inc.

High-mobility ultrathin semiconducting films prepared by spin coating.

PubMed

Mitzi, David B; Kosbar, Laura L; Murray, Conal E; Copel, Matthew; Afzali, Ali

2004-03-18

The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (approximately 50 A), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS(2-x)Se(x) films, which exhibit n-type transport, large current densities (>10(5) A cm(-2)) and mobilities greater than 10 cm2 V(-1) s(-1)--an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

High-mobility ultrathin semiconducting films prepared by spin coating

NASA Astrophysics Data System (ADS)

Mitzi, David B.; Kosbar, Laura L.; Murray, Conal E.; Copel, Matthew; Afzali, Ali

2004-03-01

The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (~50Å), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS2-xSex films, which exhibit n-type transport, large current densities (>105Acm-2) and mobilities greater than 10cm2V-1s-1-an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

Comparison of specific absorption rate induced in brain tissues of a child and an adult using mobile phone

NASA Astrophysics Data System (ADS)

Lu, Mai; Ueno, Shoogo

2012-04-01

The steady increase of mobile phone usage, especially mobile phones by children, has led to a rising concern about the possible adverse health effects of radio frequency electromagnetic field exposure. The objective of this work is to study whether there is a larger radio frequency energy absorption in the brain of a child compared to that of an adult. For this reason, three high-resolution models, two child head models (6 - and 11-year old) and one adult head model (34-year old) have been used in the study. A finite-difference time-domain method was employed to calculate the specific absorption rate (SAR) in the models from exposure to a generic handset at 1750 MHz. The results show that the SAR distributions in the human brain are age-dependent, and there is a deeper penetration of the absorbed SAR in the child's brain. The induced SAR can be significantly higher in subregions of the child's brain. In all of the examined cases, the SAR values in the brains of a child and an adult are well below the IEEE safety standard.

Ultra-High Resolution Ion Mobility Separations Utilizing Traveling Waves in a 13 m Serpentine Path Length Structures for Lossless Ion Manipulations Module

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deng, Liulin; Ibrahim, Yehia M.; Hamid, Ahmed M.

We report the development and initial evaluation of a 13-m path length Structures for Lossless Manipulations (SLIM) module for achieving high resolution separations using traveling waves (TW) with ion mobility (IM) spectrometry. The TW SLIM module was fabricated using two mirror-image printed circuit boards with appropriately configured RF, DC and TW electrodes and positioned with a 2.75-mm inter-surface gap. Ions were effective confined between the surfaces by RF-generated pseudopotential fields and moved losslessly through a serpentine path including 44 “U” turns using TWs. The ion mobility resolution was characterized at different pressures, gaps between the SLIM surfaces, TW and RFmore » parameters. After initial optimization the SLIM IM-MS module provided about 5-fold higher resolution separations than present commercially available drift tube or traveling wave IM-MS platforms. Peak capacity and peak generation rates achieved were 246 and 370 s-1, respectively, at a TW speed of 148 m/s. The high resolution achieved in the TW SLIM IM-MS enabled e.g., isomeric sugars (Lacto-N-fucopentaose I and Lacto-N-fucopentaose II) to be baseline resolved, and peptides from a albumin tryptic digest much better resolved than with existing commercial IM-MS platforms. The present work also provides a foundation for the development of much higher resolution SLIM devices based upon both considerably longer path lengths and multi-pass designs.« less

Achieving high mobility, low-voltage operating organic field-effect transistor nonvolatile memory by an ultraviolet-ozone treating ferroelectric terpolymer

PubMed Central

Xiang, Lanyi; Wang, Wei; Xie, Wenfa

2016-01-01

Poly(vinylidene fluoride–trifluoroethylene) has been widely used as a dielectric of the ferroelectric organic field-effect transistor (FE-OFET) nonvolatile memory (NVM). Some critical issues, including low mobility and high operation voltage, existed in these FE-OFET NVMs, should be resolved before considering to their commercial application. In this paper, we demonstrated low-voltage operating FE-OFET NVMs based on a ferroelectric terpolymer poly(vinylidene-fluoride-trifluoroethylene-chlorotrifluoroethylene) [P(VDF-TrFE-CTFE)] owed to its low coercive field. By applying an ultraviolet-ozone (UVO) treatment to modify the surface of P(VDF-TrFE-CTFE) films, the growth model of the pentacene film was changed, which improved the pentacene grain size and the interface morphology of the pentacene/P(VDF-TrFE-CTFE). Thus, the mobility of the FE-OFET was significantly improved. As a result, a high performance FE-OFET NVM, with a high mobility of 0.8 cm2 V−1 s−1, large memory window of 15.4~19.2, good memory on/off ratio of 103, the reliable memory endurance over 100 cycles and stable memory retention ability, was achieved at a low operation voltage of ±15 V. PMID:27824101

GaN MOSFET with Boron Trichloride-Based Dry Recess Process

NASA Astrophysics Data System (ADS)

Jiang, Y.; Wang, Q. P.; Tamai, K.; Miyashita, T.; Motoyama, S.; Wang, D. J.; Ao, J. P.; Ohno, Y.

2013-06-01

The dry recessed-gate GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure using boron trichloride (BCl3) as etching gas were fabricated and characterized. Etching with different etching power was conducted. Devices with silicon tetrachloride (SiCl4) etching gas were also prepared for comparison. Field-effect mobility and interface state density were extracted from current-voltage (I-V) characteristics. GaN MOSFETs on AlGaN/GaN heterostructure with BCl3 based dry recess achieved a high maximum electron mobility of 141.5 cm2V-1s-1 and a low interface state density.

Rylene and related diimides for organic electronics.

PubMed

Zhan, Xiaowei; Facchetti, Antonio; Barlow, Stephen; Marks, Tobin J; Ratner, Mark A; Wasielewski, Michael R; Marder, Seth R

2011-01-11

Organic electron-transporting materials are essential for the fabrication of organic p-n junctions, photovoltaic cells, n-channel field-effect transistors, and complementary logic circuits. Rylene diimides are a robust, versatile class of polycyclic aromatic electron-transport materials with excellent thermal and oxidative stability, high electron affinities, and, in many cases, high electron mobilities; they are, therefore, promising candidates for a variety of organic electronics applications. In this review, recent developments in the area of high-electron-mobility diimides based on rylenes and related aromatic cores, particularly perylene- and naphthalene-diimide-based small molecules and polymers, for application in high-performance organic field-effect transistors and photovoltaic cells are summarized and analyzed.

Mobile phone radiation causes brain tumors and should be classified as a probable human carcinogen (2A) (review).

PubMed

Morgan, L Lloyd; Miller, Anthony B; Sasco, Annie; Davis, Devra Lee

2015-05-01

Quickly changing technologies and intensive uses of radiofrequency electromagnetic field (RF-EMF)‑emitting phones pose a challenge to public health. Mobile phone users and uses and exposures to other wireless transmitting devices (WTDs) have increased in the past few years. We consider that CERENAT, a French national study, provides an important addition to the literature evaluating the use of mobile phones and risk of brain tumors. The CERENAT finding of increased risk of glioma is consistent with studies that evaluated use of mobile phones for a decade or longer and corroborate those that have shown a risk of meningioma from mobile phone use. In CERENAT, exposure to RF‑EMF from digitally enhanced cordless telephones (DECTs), used by over half the population of France during the period of this study, was not evaluated. If exposures to DECT phones could have been taken into account, the risks of glioma from mobile phone use in CERENAT are likely to be higher than published. We conclude that radiofrequency fields should be classified as a Group 2A ̔probable̓ human carcinogen under the criteria used by the International Agency for Research on Cancer (Lyon, France). Additional data should be gathered on exposures to mobile and cordless phones, other WTDs, mobile phone base stations and Wi‑Fi routers to evaluate their impact on public health. We advise that the as low as reasonable achievable (ALARA) principle be adopted for uses of this technology, while a major cross‑disciplinary effort is generated to train researchers in bioelectromagnetics and provide monitoring of potential health impacts of RF‑EMF.

Effects of short-term W-CDMA mobile phone base station exposure on women with or without mobile phone related symptoms.

PubMed

Furubayashi, Toshiaki; Ushiyama, Akira; Terao, Yasuo; Mizuno, Yoko; Shirasawa, Kei; Pongpaibool, Pornanong; Simba, Ally Y; Wake, Kanako; Nishikawa, Masami; Miyawaki, Kaori; Yasuda, Asako; Uchiyama, Mitsunori; Yamashita, Hitomi Kobayashi; Masuda, Hiroshi; Hirota, Shogo; Takahashi, Miyuki; Okano, Tomoko; Inomata-Terada, Satomi; Sokejima, Shigeru; Maruyama, Eiji; Watanabe, Soichi; Taki, Masao; Ohkubo, Chiyoji; Ugawa, Yoshikazu

2009-02-01

To investigate possible health effects of mobile phone use, we conducted a double-blind, cross-over provocation study to confirm whether subjects with mobile phone related symptoms (MPRS) are more susceptible than control subjects to the effect of electromagnetic fields (EMF) emitted from base stations. We sent questionnaires to 5,000 women and obtained 2,472 valid responses from possible candidates; from these, we recruited 11 subjects with MPRS and 43 controls. There were four EMF exposure conditions, each of which lasted 30 min: continuous, intermittent, and sham exposure with and without noise. Subjects were exposed to EMF of 2.14 GHz, 10 V/m (W-CDMA), in a shielded room to simulate whole-body exposure to EMF from base stations, although the exposure strength we used was higher than that commonly received from base stations. We measured several psychological and cognitive parameters pre- and post-exposure, and monitored autonomic functions. Subjects were asked to report on their perception of EMF and level of discomfort during the experiment. The MPRS group did not differ from the controls in their ability to detect exposure to EMF; nevertheless they consistently experienced more discomfort, regardless of whether or not they were actually exposed to EMF, and despite the lack of significant changes in their autonomic functions. Thus, the two groups did not differ in their responses to real or sham EMF exposure according to any psychological, cognitive or autonomic assessment. In conclusion, we found no evidence of any causal link between hypersensitivity symptoms and exposure to EMF from base stations. Copyright 2008 Wiley-Liss, Inc.

Cost-effectiveness of the LIFE Physical Activity Intervention for Older Adults at Increased Risk for Mobility Disability

PubMed Central

Kaplan, Robert M.; Castro Sweet, Cynthia M.; Church, Timothy; Espeland, Mark A.; Gill, Thomas M.; Glynn, Nancy W.; King, Abby C.; Kritchevsky, Stephen; Manini, Todd; McDermott, Mary M.; Reid, Kieran F.; Rushing, Julia; Pahor, Marco

2016-01-01

Background: Losing the ability to walk safely and independently is a major concern for many older adults. The Lifestyle Interventions and Independence for Elders study recently demonstrated that a physical activity (PA) intervention can delay the onset of major mobility disability. Our objective is to examine the resources required to deliver the PA intervention and calculate the incremental cost-effectiveness compared with a health education intervention. Methods: The Lifestyle Interventions and Independence for Elders study enrolled 1,635 older adults at risk for mobility disability. They were recruited at eight field centers and randomly assigned to either PA or health education. The PA program consisted of 50-minute center-based exercise 2× weekly, augmented with home-based activity to achieve a goal of 150min/wk of PA. Health education consisted of weekly workshops for 26 weeks, and monthly sessions thereafter. Analyses were conducted from a health system perspective, with a 2.6-year time horizon. Results: The average cost per participant over 2.6 years was US$3,302 and US$1,001 for the PA and health education interventions, respectively. PA participants accrued 0.047 per person more Quality-Adjusted Life-Years (QALYs) than health education participants. PA interventions costs were slightly higher than other recent PA interventions. The incremental cost-effectiveness ratios were US$42,376/major mobility disability prevented and US$49,167/QALY. Sensitivity analyses indicated that results were relatively robust to varied assumptions. Conclusions: The PA intervention costs and QALYs gained are comparable to those found in other studies. The ICERS are less than many commonly recommended medical treatments. Implementing the intervention in non-research settings may reduce costs further. PMID:26888433

Homophily and the speed of social mobilization: the effect of acquired and ascribed traits.

PubMed

Alstott, Jeff; Madnick, Stuart; Velu, Chander

2014-01-01

Large-scale mobilization of individuals across social networks is becoming increasingly prevalent in society. However, little is known about what affects the speed of social mobilization. Here we use a framed field experiment to identify and measure properties of individuals and their relationships that predict mobilization speed. We ran a global social mobilization contest and recorded personal traits of the participants and those they recruited. We studied the effects of ascribed traits (gender, age) and acquired traits (geography, and information source) on the speed of mobilization. We found that homophily, a preference for interacting with other individuals with similar traits, had a mixed role in social mobilization. Homophily was present for acquired traits, in which mobilization speed was faster when the recuiter and recruit had the same trait compared to different traits. In contrast, we did not find support for homophily for the ascribed traits. Instead, those traits had other, non-homophily effects: Females mobilized other females faster than males mobilized other males. Younger recruiters mobilized others faster, and older recruits mobilized slower. Recruits also mobilized faster when they first heard about the contest directly from the contest organization, and decreased in speed when hearing from less personal source types (e.g. family vs. media). These findings show that social mobilization includes dynamics that are unlike other, more passive forms of social activity propagation. These findings suggest relevant factors for engineering social mobilization tasks for increased speed.

User Acceptance of Mobile Technology: A Campus-Wide Implementation of Blackboard's Mobile™ Learn Application

ERIC Educational Resources Information Center

Chen, Baiyun; Sivo, Stephen; Seilhamer, Ryan; Sugar, Amy; Mao, Jin

2013-01-01

Mobile learning is a fast growing trend in higher education. This study examined how an extended technology acceptance model (TAM) could evaluate and predict the use of a mobile application in learning. A path analysis design was used to measure the mediating effects on the use of Blackboard's Mobile™ Learn application in coursework (N = 77). The…

Highly Sensitive Ammonia Gas Sensor Based on Single-Crystal Poly(3-hexylthiophene) (P3HT) Organic Field Effect Transistor.

PubMed

Mun, Seohyun; Park, Yoonkyung; Lee, Yong-Eun Koo; Sung, Myung Mo

2017-11-28

A highly sensitive organic field-effect transistor (OFET)-based sensor for ammonia in the range of 0.01 to 25 ppm was developed. The sensor was fabricated by employing an array of single-crystal poly(3-hexylthiophene) (P3HT) nanowires as the organic semiconductor (OSC) layer of an OFET with a top-contact geometry. The electrical characteristics (field-effect mobility, on/off current ratio) of the single-crystal P3HT nanowire OFET were about 2 orders of magnitude larger than those of the P3HT thin film OFET with the same geometry. The P3HT nanowire OFET showed excellent sensitivity to ammonia, about 3 times higher than that of the P3HT thin film OFET at 25 ppm ammonia. The ammonia response of the OFET was reversible and was not affected by changes in relative humidity from 45 to 100%. The high ammonia sensitivity of the P3HT nanowire OFET is believed to result from the single crystal nature and high surface/volume ratio of the P3HT nanowire used in the OSC layer.

Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics.

PubMed

Xia, Fengnian; Wang, Han; Jia, Yichen

2014-07-21

Graphene and transition metal dichalcogenides (TMDCs) are the two major types of layered materials under intensive investigation. However, the zero-bandgap nature of graphene and the relatively low mobility in TMDCs limit their applications. Here we reintroduce black phosphorus (BP), the most stable allotrope of phosphorus with strong intrinsic in-plane anisotropy, to the layered-material family. For 15-nm-thick BP, we measure a Hall mobility of 1,000 and 600 cm(2)V(-1)s(-1) for holes along the light (x) and heavy (y) effective mass directions at 120 K. BP thin films also exhibit large and anisotropic in-plane optical conductivity from 2 to 5 μm. Field-effect transistors using 5 nm BP along x direction exhibit an on-off current ratio exceeding 10(5), a field-effect mobility of 205 cm(2)V(-1)s(-1), and good current saturation characteristics all at room temperature. BP shows great potential for thin-film electronics, infrared optoelectronics and novel devices in which anisotropic properties are desirable.

Hooked differential mobility spectrometry apparatus and method therefore

DOEpatents

Shvartsburg, Alexandre A [Richland, WA; Tang, Keqi [Richland, WA; Ibrahim, Yehia M [Richland, WA; Smith, Richard D [Richland, WA

2009-02-17

Disclosed are a device and method for improved interfacing of differential mobility spectrometry (DMS) or field asymmetric waveform ion mobility spectrometry (FAIMS) analyzers of substantially planar geometry to subsequent or preceding instrument stages. Interfacing is achieved using curved DMS elements, where a thick ion beam emitted by planar DMS analyzers or injected into them for ion filtering is compressed to the gap median by DMS ion focusing effect in a spatially inhomogeneous electric field. Resulting thinner beams are more effectively transmitted through necessarily constrained conductance limit apertures to subsequent instrument stages operated at a pressure lower than DMS, and/or more effectively injected into planar DMS analyzers. The technology is synergetic with slit apertures, slit aperture/ion funnels, and high-pressure ion funnel interfaces known in the art which allow for increasing cross-sectional area of MS inlets. The invention may be used in integrated analytical platforms, including, e.g., DMS/MS, LC/DMS/MS, and DMS/IMS/MS that could replace and/or enhance current LC/MS methods, e.g., for proteomics research.

Control of arsenic mobilization in paddy soils by manganese and iron oxides.

PubMed

Xu, Xiaowei; Chen, Chuan; Wang, Peng; Kretzschmar, Ruben; Zhao, Fang-Jie

2017-12-01

Reductive mobilization of arsenic (As) in paddy soils under flooded conditions is an important reason for the relatively high accumulation of As in rice, posing a risk to food safety and human health. The extent of As mobilization varies widely among paddy soils, but the reasons are not well understood. In this study, we investigated As mobilization in six As-contaminated paddy soils (total As ranging from 73 to 122 mg kg -1 ) in flooded incubation and pot experiments. Arsenic speciation in the solution and solid phases were determined. The magnitude of As mobilization into the porewater varied by > 100 times among the six soils. Porewater As concentration correlated closely with the concentration of oxalate-extractable As, suggesting that As associated with amorphous iron (oxyhydr)oxides represents the potentially mobilizable pool of As under flooded conditions. Soil containing a high level of manganese oxides showed the lowest As mobilization, likely because Mn oxides retard As mobilization by slowing down the drop of redox potential upon soil flooding and maintaining a higher arsenate to arsenite ratio in the solid and solution phases. Additions of a synthetic Mn oxide (hausmannite) to two paddy soils increased arsenite oxidation, decreased As mobilization into the porewater and decreased As concentrations in rice grain and straw. Consistent with previous studies using simplified model systems or pure mineral phases, the present study shows that Mn oxides and amorphous Fe (oxyhydr)oxides are important factors controlling reductive As mobilization in As-contaminated paddy soils. In addition, this study also suggests a potential mitigation strategy using exogenous Mn oxides to decrease As uptake by rice in paddy soils containing low levels of indigenous Mn oxides, although further work is needed to verify its efficacy and possible secondary effects under field conditions. Copyright © 2017 Elsevier Ltd. All rights reserved.

A drain current model for amorphous InGaZnO thin film transistors considering temperature effects

NASA Astrophysics Data System (ADS)

Cai, M. X.; Yao, R. H.

2018-03-01

Temperature dependent electrical characteristics of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) are investigated considering the percolation and multiple trapping and release (MTR) conduction mechanisms. Carrier-density and temperature dependent carrier mobility in a-IGZO is derived with the Boltzmann transport equation, which is affected by potential barriers above the conduction band edge with Gaussian-like distributions. The free and trapped charge densities in the channel are calculated with Fermi-Dirac statistics, and the field effective mobility of a-IGZO TFTs is then deduced based on the MTR theory. Temperature dependent drain current model for a-IGZO TFTs is finally derived with the obtained low field mobility and free charge density, which is applicable to both non-degenerate and degenerate conductions. This physical-based model is verified by available experiment results at various temperatures.

Accurate on-chip measurement of the Seebeck coefficient of high mobility small molecule organic semiconductors

NASA Astrophysics Data System (ADS)

Warwick, C. N.; Venkateshvaran, D.; Sirringhaus, H.

2015-09-01

We present measurements of the Seebeck coefficient in two high mobility organic small molecules, 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) and 2,9-didecyl-dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C10-DNTT). The measurements are performed in a field effect transistor structure with high field effect mobilities of approximately 3 cm2/V s. This allows us to observe both the charge concentration and temperature dependence of the Seebeck coefficient. We find a strong logarithmic dependence upon charge concentration and a temperature dependence within the measurement uncertainty. Despite performing the measurements on highly polycrystalline evaporated films, we see an agreement in the Seebeck coefficient with modelled values from Shi et al. [Chem. Mater. 26, 2669 (2014)] at high charge concentrations. We attribute deviations from the model at lower charge concentrations to charge trapping.

Electric-field distribution in Au-semi-insulating GaAs contact investigated by positron-lifetime technique

NASA Astrophysics Data System (ADS)

Ling, C. C.; Shek, Y. F.; Huang, A. P.; Fung, S.; Beling, C. D.

1999-02-01

Positron-lifetime spectroscopy has been used to investigate the electric-field distribution occurring at the Au-semi-insulating GaAs interface. Positrons implanted from a 22Na source and drifted back to the interface are detected through their characteristic lifetime at interface traps. The relative intensity of this fraction of interface-trapped positrons reveals that the field strength in the depletion region saturates at applied biases above 50 V, an observation that cannot be reconciled with a simple depletion approximation model. The data, are, however, shown to be fully consistent with recent direct electric-field measurements and the theoretical model proposed by McGregor et al. [J. Appl. Phys. 75, 7910 (1994)] of an enhanced EL2+ electron-capture cross section above a critical electric field that causes a dramatic reduction of the depletion region's net charge density. Two theoretically derived electric field profiles, together with an experimentally based profile, are used to estimate a positron mobility of ~95+/-35 cm2 V-1 s-1 under the saturation field. This value is higher than previous experiments would suggest, and reasons for this effect are discussed.

Understanding charge transport in lead iodide perovskite thin-film field-effect transistors

PubMed Central

Senanayak, Satyaprasad P.; Yang, Bingyan; Thomas, Tudor H.; Giesbrecht, Nadja; Huang, Wenchao; Gann, Eliot; Nair, Bhaskaran; Goedel, Karl; Guha, Suchi; Moya, Xavier; McNeill, Christopher R.; Docampo, Pablo; Sadhanala, Aditya; Friend, Richard H.; Sirringhaus, Henning

2017-01-01

Fundamental understanding of the charge transport physics of hybrid lead halide perovskite semiconductors is important for advancing their use in high-performance optoelectronics. We use field-effect transistors (FETs) to probe the charge transport mechanism in thin films of methylammonium lead iodide (MAPbI3). We show that through optimization of thin-film microstructure and source-drain contact modifications, it is possible to significantly minimize instability and hysteresis in FET characteristics and demonstrate an electron field-effect mobility (μFET) of 0.5 cm2/Vs at room temperature. Temperature-dependent transport studies revealed a negative coefficient of mobility with three different temperature regimes. On the basis of electrical and spectroscopic studies, we attribute the three different regimes to transport limited by ion migration due to point defects associated with grain boundaries, polarization disorder of the MA+ cations, and thermal vibrations of the lead halide inorganic cages. PMID:28138550

Charge carrier coherence and Hall effect in organic semiconductors.

PubMed

Yi, H T; Gartstein, Y N; Podzorov, V

2016-03-30

Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

Swimming Performance of Adult Asian Carp: Field Assessment Using a Mobile Swim Tunnel

DTIC Science & Technology

2016-08-01

The effect of temperature on swimming performance and oxygen consumption in adult sockeye (Oncorhynchus nerka) and coho (O. kisutch) salmon stocks...tunnel to determine the critical swim speed (Ucrit), oxygen consumption (VO2), and endurance at a single velocity. Tunnel Type Tunnel Size (L...specially designed mobile swim tunnel indicated that it might be used effectively with other large, active, free-swimming planktivores, including bigheaded

Effects of channel thickness on oxide thin film transistor with double-stacked channel layer

NASA Astrophysics Data System (ADS)

Lee, Kimoon; Kim, Yong-Hoon; Yoon, Sung-Min; Kim, Jiwan; Oh, Min Suk

2017-11-01

To improve the field effect mobility and control the threshold voltage ( V th ) of oxide thin film transistors (TFTs), we fabricated the oxide TFTs with double-stacked channel layers which consist of thick Zn-Sn-O (ZTO) and very thin In-Zn-O (IZO) layers. We investigated the effects of the thickness of thin conductive layer and the conductivity of thick layer on oxide TFTs with doublestacked channel layer. When we changed the thickness of thin conductive IZO channel layer, the resistivity values were changed. This resistivity of thin channel layer affected on the saturation field effect mobility and the off current of TFTs. In case of the thick ZTO channel layer which was deposited by sputtering in Ar: O2 = 10: 1, the device showed better performances than that which was deposited in Ar: O2 = 1: 1. Our TFTs showed high mobility ( μ FE ) of 40.7 cm2/Vs and V th of 4.3 V. We assumed that high mobility and the controlled V th were caused by thin conductive IZO layer and thick stable ZTO layer. Therefore, this double-stacked channel structure can be very promising way to improve the electrical characteristics of various oxide thin film transistors.

The microwave Hall effect measured using a waveguide tee

DOE Office of Scientific and Technical Information (OSTI.GOV)

Coppock, J. E.; Anderson, J. R.; Johnson, W. B.

2016-03-14

This paper describes a simple microwave apparatus to measure the Hall effect in semiconductor wafers. The advantage of this technique is that it does not require contacts on the sample or the use of a resonant cavity. Our method consists of placing the semiconductor wafer into a slot cut in an X-band (8–12 GHz) waveguide series tee, injecting microwave power into the two opposite arms of the tee, and measuring the microwave output at the third arm. A magnetic field applied perpendicular to the wafer gives a microwave Hall signal that is linear in the magnetic field and which reverses phasemore » when the magnetic field is reversed. The microwave Hall signal is proportional to the semiconductor mobility, which we compare for calibration purposes with d.c. mobility measurements obtained using the van der Pauw method. We obtain the resistivity by measuring the microwave reflection coefficient of the sample. This paper presents data for silicon and germanium samples doped with boron or phosphorus. The measured mobilities ranged from 270 to 3000 cm{sup 2}/(V s).« less

Optimum Waveforms for Differential Ion Mobility Spectrometry (FAIMS)

PubMed Central

Shvartsburg, Alexandre A.; Smith, Richard D.

2009-01-01

Differential mobility spectrometry or field asymmetric waveform ion mobility spectrometry (FAIMS) is a new tool for separation and identification of gas-phase ions, particularly in conjunction with mass-spectrometry. In FAIMS, ions are filtered by the difference between mobilities in gases (K) at high and low electric field intensity (E) using asymmetric waveforms. An infinite number of possible waveform profiles make maximizing the performance within engineering constraints a major issue for FAIMS technology refinement. Earlier optimizations assumed the non-constant component of mobility to scale as E2, producing the same result for all ions. Here we show that the optimum profiles are defined by the full series expansion of K(E) that includes terms beyond the 1st that is proportional to E2. For many ion/gas pairs, the first two terms have different signs, and the optimum profiles at sufficiently high E in FAIMS may differ substantially from those previously reported, improving the resolving power by up to 2.2 times. This situation arises for some ions in all FAIMS systems, but becomes more common in recent miniaturized devices that employ higher E. With realistic K(E) dependences, the maximum waveform amplitude is not necessarily optimum and reducing it by up to ∼20 – 30% is beneficial in some cases. The present findings are particularly relevant to targeted analyses where separation depends on the difference between K(E) functions for specific ions. PMID:18585054

Improving College Students English Learning with Dr. Eye Android Mid

ERIC Educational Resources Information Center

Yang, Ju Yin; Che, Pei-Chun

2015-01-01

This paper investigates college students' English language learning through use of Dr. Eye Android handheld mobile Internet device (MID). Compared to related studies, students' English learning using MIDs has not been evaluated and fully understood in the field of higher education. Quantitatively, the researchers used TOEIC pretest and posttest to…

Open Doors 1991/92. Report on International Educational Exchange.

ERIC Educational Resources Information Center

Zikopoulos, Marianthi, Ed.; And Others

1992-01-01

This report provides statistical data on 419,600 foreign students from over 200 countries studying at U.S. higher educational institutions. The report identifies trends in student mobility and migration, national origin, sources of financial support, fields of study, enrollments, and rates of growth. The book's extensive tables and analyses are…

Mobile Phone Interventions for the Secondary Prevention of Cardiovascular Disease.

PubMed

Park, Linda G; Beatty, Alexis; Stafford, Zoey; Whooley, Mary A

2016-01-01

Mobile health in the form of text messaging and mobile applications provides an innovative and effective approach to promote prevention and management of cardiovascular disease (CVD); however, the magnitude of these effects is unclear. Through a comprehensive search of databases from 2002-2016, we conducted a quantitative systematic review. The selected studies were critically evaluated to extract and summarize pertinent characteristics and outcomes. A large majority of studies (22 of 28, 79%) demonstrated text messaging, mobile applications, and telemonitoring via mobile phones were effective in improving outcomes. Some key factors associated with successful interventions included personalized messages with tailored advice, greater engagement (2-way text messaging, higher frequency of messages), and use of multiple modalities. Overall, text messaging appears more effective than smartphone-based interventions. Incorporating principles of behavioral activation will help promote and sustain healthy lifestyle behaviors in patients with CVD that result in improved clinical outcomes. Copyright © 2016 Elsevier Inc. All rights reserved.

Mobile Phone Interventions for the Secondary Prevention of Cardiovascular Disease

PubMed Central

Park, Linda G.; Beatty, Alexis; Stafford, Zoey; Whooley, Mary A.

2016-01-01

Mobile health in the form of text messaging and mobile applications provides an innovative and effective approach to promote prevention and management of cardiovascular disease (CVD); however, the magnitude of these effects is unclear. Through a comprehensive search of databases from 2002–2016, we conducted a quantitative systematic review. The selected studies were critically evaluated to extract and summarize pertinent characteristics and outcomes. A large majority of studies (22 of 28, 79%) demonstrated text messaging, mobile applications, and telemonitoring via mobile phones were effective in improving outcomes. Some key factors associated with successful interventions included personalized messages with tailored advice, greater engagement (2-way text messaging, higher frequency of messages), and use of multiple modalities. Overall, text messaging appears more effective than smartphone-based interventions. Incorporating principles of behavioral activation will help promote and sustain healthy lifestyle behaviors in patients with CVD that result in improved clinical outcomes. PMID:27001245

Biophysical evaluation of radiofrequency electromagnetic field effects on male reproductive pattern.

PubMed

Kesari, Kavindra Kumar; Kumar, Sanjay; Nirala, Jayprakash; Siddiqui, Mohd Haris; Behari, Jitendra

2013-03-01

There are possible hazardous health effects of exposure to radiofrequency electromagnetic radiations emitted from mobile phone on the human reproductive pattern. It is more effective while keeping mobile phones in pocket or near testicular organs. Present review examines the possible concern on radio frequency radiation interaction and biological effects such as enzyme induction, and toxicological effects, including genotoxicity and carcinogenicity, testicular cancer, and reproductive outcomes. Testicular infertility or testicular cancer due to mobile phone or microwave radiations suggests an increased level of reactive oxygen species (ROS). Though generation of ROS in testis has been responsible for possible toxic effects on physiology of reproduction, the reviews of last few decades have well established that these radiations are very harmful and cause mutagenic changes in reproductive pattern and leads to infertility. The debate will be focused on bio-interaction mechanism between mobile phone and testicular cancer due to ROS formation. This causes the biological damage and leads to several changes like decreased sperm count, enzymatic and hormonal changes, DNA damage, and apoptosis formation. In the present review, physics of mobile phone including future research on various aspects has been discussed.

Human and animal health surveys among pastoralists.

PubMed

Schelling, E; Greter, H; Kessely, H; Abakar, M F; Ngandolo, B N; Crump, L; Bold, B; Kasymbekov, J; Baljinnyam, Z; Fokou, G; Zinsstag, J; Bonfoh, B; Hattendorf, J; Béchir, M

2016-11-01

Valid human and livestock health surveys, including longitudinal follow-up, are feasible among mobile pastoralists and provide fundamental information to agencies for interventions that are responsive to realities and effective in addressing the needs of pastoralists. However, pastoralists are often excluded from studies, surveillance systems and health programmes. The occurrence of preventable and treatable diseases such as perinatal tetanus, measles and tuberculosis are indicative of limited access to health providers and information. It is difficult for health services to include effective outreach with their available financial and human resources. One consequence is that maternal mortality rates among pastoralists are unacceptably high. Environmental determinants such as the quality of water and the pasture ecosystems further influence the morbidity of pastoralists. In the Sahel, the nutritional status of pastoralist children is seasonally better than that of settled children; but pastoralist women tend to have higher acute malnutrition rates. Pastoralist women are more vulnerable than men to exclusion from health services for different context-specific reasons. Evidence-based control measures can be assessed in cluster surveys with simultaneous assessments of health among people and livestock, where data on costs of disease and interventions are also collected. These provide important arguments for governmental and non-governmental agencies for intervention development. New, integrated One Health surveillance systems making use of mobile technology and taking into account local concepts and the experiences and priorities of pastoralist communities, combined with sound field data, are essential to develop and provide adapted human and animal health services that are inclusive for mobile pastoralist communities and allow them to maintain their mobile way of life.

Functional visual fields: relationship of visual field areas to self-reported function.

PubMed

Subhi, Hikmat; Latham, Keziah; Myint, Joy; Crossland, Michael D

2017-07-01

The aim of this study is to relate areas of the visual field to functional difficulties to inform the development of a binocular visual field assessment that can reflect the functional consequences of visual field loss. Fifty-two participants with peripheral visual field loss undertook binocular assessment of visual fields using the 30-2 and 60-4 SITA Fast programs on the Humphrey Field Analyser, and mean thresholds were derived. Binocular visual acuity, contrast sensitivity and near reading performance were also determined. Self-reported overall and mobility function were assessed using the Dutch ICF Activity Inventory. Greater visual field loss (0-60°) was associated with worse self-reported function both overall (R 2 = 0.50; p < 0.0001), and for mobility (R 2 = 0.64; p < 0.0001). Central (0-30°) and peripheral (30-60°) visual field areas were similarly related to mobility function (R 2 = 0.61, p < 0.0001 and R 2 = 0.63, p < 0.0001 respectively), although the peripheral (30-60°) visual field was the best predictor of mobility self-reported function in multiple regression analyses. Superior and inferior visual field areas related similarly to mobility function (R 2 = 0.56, p < 0.0001 and R 2 = 0.67, p < 0.0001 respectively). The inferior field was found to be the best predictor of mobility function in multiple regression analysis. Mean threshold of the binocular visual field to 60° eccentricity is a good predictor of self-reported function overall, and particularly of mobility function. Both the central (0-30°) and peripheral (30-60°) mean threshold are good predictors of self-reported function, but the peripheral (30-0°) field is a slightly better predictor of mobility function, and should not be ignored when considering functional consequences of field loss. The inferior visual field is a slightly stronger predictor of perceived overall and mobility function than the superior field. © 2017 The Authors Ophthalmic & Physiological Optics © 2017 The College of Optometrists.

Velocity overshoot decay mechanisms in compound semiconductor field-effect transistors with a submicron characteristic length

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jyegal, Jang, E-mail: jjyegal@inu.ac.kr

Velocity overshoot is a critically important nonstationary effect utilized for the enhanced performance of submicron field-effect devices fabricated with high-electron-mobility compound semiconductors. However, the physical mechanisms of velocity overshoot decay dynamics in the devices are not known in detail. Therefore, a numerical analysis is conducted typically for a submicron GaAs metal-semiconductor field-effect transistor in order to elucidate the physical mechanisms. It is found that there exist three different mechanisms, depending on device bias conditions. Specifically, at large drain biases corresponding to the saturation drain current (dc) region, the velocity overshoot suddenly begins to drop very sensitively due to the onsetmore » of a rapid decrease of the momentum relaxation time, not the mobility, arising from the effect of velocity-randomizing intervalley scattering. It then continues to drop rapidly and decays completely by severe mobility reduction due to intervalley scattering. On the other hand, at small drain biases corresponding to the linear dc region, the velocity overshoot suddenly begins to drop very sensitively due to the onset of a rapid increase of thermal energy diffusion by electrons in the channel of the gate. It then continues to drop rapidly for a certain channel distance due to the increasing thermal energy diffusion effect, and later completely decays by a sharply decreasing electric field. Moreover, at drain biases close to a dc saturation voltage, the mechanism is a mixture of the above two bias conditions. It is suggested that a large secondary-valley energy separation is essential to increase the performance of submicron devices.« less

The Theory Paper: What Is the Future of Mobile Learning?

ERIC Educational Resources Information Center

Traxler, John; Koole, Marguerite

2014-01-01

Mobile learning is often described as ubiquitous, pervasive, accessible, and transparent. It has been seen as providing opportunities for those who could not previously cross existing digital divides-though it of course may create new ones. Yet, some work in the field lacks sufficient and appropriate grounding in theory to effectively address such…

An Interactive Concept Map Approach to Supporting Mobile Learning Activities for Natural Science Courses

ERIC Educational Resources Information Center

Hwang, Gwo-Jen; Wu, Po-Han; Ke, Hui-Ru

2011-01-01

Mobile and wireless communication technologies not only enable anytime and anywhere learning, but also provide the opportunity to develop learning environments that combine real-world and digital-world resources. Nevertheless, researchers have indicated that, without effective tools for helping students organize their observations in the field,…

Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

PubMed Central

Heo, Jae Sang; Choi, Seungbeom; Jo, Jeong-Wan; Kang, Jingu; Park, Ho-Hyun; Kim, Yong-Hoon; Park, Sung Kyu

2017-01-01

In this paper, we demonstrate high mobility solution-processed metal-oxide thin-film transistors (TFTs) by using a high-frequency-stable ionic-type hybrid gate dielectric (HGD). The HGD gate dielectric, a blend of sol-gel aluminum oxide (AlOx) and poly(4-vinylphenol) (PVP), exhibited high dielectric constant (ε~8.15) and high-frequency-stable characteristics (1 MHz). Using the ionic-type HGD as a gate dielectric layer, an minimal electron-double-layer (EDL) can be formed at the gate dielectric/InOx interface, enhancing the field-effect mobility of the TFTs. Particularly, using the ionic-type HGD gate dielectrics annealed at 350 °C, InOx TFTs having an average field-effect mobility of 16.1 cm2/Vs were achieved (maximum mobility of 24 cm2/Vs). Furthermore, the ionic-type HGD gate dielectrics can be processed at a low temperature of 150 °C, which may enable their applications in low-thermal-budget plastic and elastomeric substrates. In addition, we systematically studied the operational stability of the InOx TFTs using the HGD gate dielectric, and it was observed that the HGD gate dielectric effectively suppressed the negative threshold voltage shift during the negative-illumination-bias stress possibly owing to the recombination of hole carriers injected in the gate dielectric with the negatively charged ionic species in the HGD gate dielectric. PMID:28772972

Effect of Bluetooth headset and mobile phone electromagnetic fields on the human auditory nerve.

PubMed

Mandalà, Marco; Colletti, Vittorio; Sacchetto, Luca; Manganotti, Paolo; Ramat, Stefano; Marcocci, Alessandro; Colletti, Liliana

2014-01-01

The possibility that long-term mobile phone use increases the incidence of astrocytoma, glioma and acoustic neuroma has been investigated in several studies. Recently, our group showed that direct exposure (in a surgical setting) to cell phone electromagnetic fields (EMFs) induces deterioration of auditory evoked cochlear nerve compound action potential (CNAP) in humans. To verify whether the use of Bluetooth devices reduces these effects, we conducted the present study with the same experimental protocol. Randomized trial. Twelve patients underwent retrosigmoid vestibular neurectomy to treat definite unilateral Ménière's disease while being monitored with acoustically evoked CNAPs to assess direct mobile phone exposure or alternatively the EMF effects of Bluetooth headsets. We found no short-term effects of Bluetooth EMFs on the auditory nervous structures, whereas direct mobile phone EMF exposure confirmed a significant decrease in CNAPs amplitude and an increase in latency in all subjects. The outcomes of the present study show that, contrary to the finding that the latency and amplitude of CNAPs are very sensitive to EMFs produced by the tested mobile phone, the EMFs produced by a common Bluetooth device do not induce any significant change in cochlear nerve activity. The conditions of exposure, therefore, differ from those of everyday life, in which various biological tissues may reduce the EMF affecting the cochlear nerve. Nevertheless, these novel findings may have important safety implications. © 2013 The American Laryngological, Rhinological and Otological Society, Inc.

The Uses and Impacts of Mobile Computing Technology in Hot Spots Policing.

PubMed

Koper, Christopher S; Lum, Cynthia; Hibdon, Julie

2015-12-01

Recent technological advances have much potential for improving police performance, but there has been little research testing whether they have made police more effective in reducing crime. To study the uses and crime control impacts of mobile computing technology in the context of geographically focused "hot spots" patrols. An experiment was conducted using 18 crime hot spots in a suburban jurisdiction. Nine of these locations were randomly selected to receive additional patrols over 11 weeks. Researchers studied officers' use of mobile information technology (IT) during the patrols using activity logs and interviews. Nonrandomized subgroup and multivariate analyses were employed to determine if and how the effects of the patrols varied based on these patterns. Officers used mobile computing technology primarily for surveillance and enforcement (e.g., checking automobile license plates and running checks on people during traffic stops and field interviews), and they noted both advantages and disadvantages to its use. Officers did not often use technology for strategic problem-solving and crime prevention. Given sufficient (but modest) dosages, the extra patrols reduced crime at the hot spots, but this effect was smaller in places where officers made greater use of technology. Basic applications of mobile computing may have little if any direct, measurable impact on officers' ability to reduce crime in the field. Greater training and emphasis on strategic uses of IT for problem-solving and crime prevention, and greater attention to its behavioral effects on officers, might enhance its application for crime reduction. © The Author(s) 2016.

Evidence for ion migration in hybrid perovskite solar cells with minimal hysteresis

PubMed Central

Calado, Philip; Telford, Andrew M.; Bryant, Daniel; Li, Xiaoe; Nelson, Jenny; O'Regan, Brian C.; Barnes, Piers R.F.

2016-01-01

Ion migration has been proposed as a possible cause of photovoltaic current–voltage hysteresis in hybrid perovskite solar cells. A major objection to this hypothesis is that hysteresis can be reduced by changing the interfacial contact materials; however, this is unlikely to significantly influence the behaviour of mobile ionic charge within the perovskite phase. Here, we show that the primary effects of ion migration can be observed regardless of whether the contacts were changed to give devices with or without significant hysteresis. Transient optoelectronic measurements combined with device simulations indicate that electric-field screening, consistent with ion migration, is similar in both high and low hysteresis CH3NH3PbI3 cells. Simulation of the photovoltage and photocurrent transients shows that hysteresis requires the combination of both mobile ionic charge and recombination near the perovskite-contact interfaces. Passivating contact recombination results in higher photogenerated charge concentrations at forward bias which screen the ionic charge, reducing hysteresis. PMID:28004653

Sputtered boron indium oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Stewart, Kevin A.; Gouliouk, Vasily; Keszler, Douglas A.; Wager, John F.

2017-11-01

Boron indium oxide (BIO) is studied for thin-film transistor (TFT) channel layer applications. Sputtered BIO thin films exhibit an amorphous phase over a wide range of B2O3/In2O3 ratios and remain amorphous up to 500 °C. The band gap decreases linearly with decreasing boron content, whereas device performance generally improves with decreasing boron content. The best amorphous BIO TFT exhibits a field-effect mobility of 10 cm2 V-1 s-1, turn-on voltage of 2.5 V, and sub-threshold swing of 0.72 V/dec. Decreasing the boron content to 12.5% leads to a polycrystalline phase, but further increases the mobility up to 20-40 cm2 V-1 s-1. TCAD simulation results suggest that the reason for higher performance after increasing the anneal temperature from 200 to 400 °C is due to a lower defect density in the sub-bandgap region of the BIO channel layer.

Experimental studies of MOS inversion and accumulation layers: Quantum mechanical effects and mobility

NASA Astrophysics Data System (ADS)

Chindalore, Gowrishankar L.

The development of fast, multi-functional, and energy efficient integrated circuits, is made possible by aggressively scaling the gate lengths of the MOS devices into the sub-quarter micron regime. However, with the increasing cost of fabrication, there is a strong need for the development of reliable and accurate device simulation capabilities. The development of the theoretical models for simulators is guided by extensive experimental data, which enable an experimental verification of the models, and lead to a better understanding of the underlying physics. This dissertation presents the methodology and the results for one such experimental effort, where two important physical effects in the inversion layer and the accumulation layer of a MOS device, namely, the quantum mechanical (QM) effects and the carrier mobility are investigated. Accordingly, this dissertation has been divided into two parts, with the first part discussing the increase in the threshold voltage and the accumulation electrical oxide thickness due to QM effects. The second part discusses the methodology and the experimental results for the extraction of the majority carrier mobilities in the accumulation layers of a MOSFET. The continued scaling of the MOS gate length requires decreased gate oxide thickness (tox) and increased channel doping (NB) in order to improve device performance while suppressing the short- channel effects. The combination of the two result in large enough transverse electric fields to cause significant quantization of the carriers in the potential well at the Si/SiO2 interface. Hence, compared to the classical calculations (where the QM effects are ignored), the QM effects are found to lead to an increase in the experimental threshold voltage by approximately 100mV, and an overestimation of the physical oxide thickness by approximately 3-4A, in MOSFET devices with a gate oxide thickness and the doping level anticipated for technologies with sub-quarter micron gate lengths. Thus, the experimental results indicate the need for using accurate QM models for simulating sub-quarter micron devices. Carrier mobility is a fundamental semiconductor device transport parameter that has been extensively characterized for both electrons and holes in the silicon bulk and MOS inversion layers. Accumulation layer mobility (μacc) has become increasingly important as the MOS devices have scaled to deep submicron gate lengths, and much effort has been required to achieve increased drive current. However, very little experimental data has been reported for carrier mobility in the MOS accumulation layers (Sun80, Man89). Hence, in this research work, the accumulation layer mobilities were extracted using buried-channel MOSFETs for both the electrons and holes, and for a wide range of doping levels at temperatures ranging from 25C to 150C. The experimental μacc is found to be greater than the corresponding bulk and the inversion layer mobilities, at low to moderate effective fields. However, at very high effective fields, where phonon and surface roughness scattering are dominant, the mobility behavior is found to be very similar to that of the inversion carriers. The extensive set of experimental data will enable the development of accurate local accumulation mobility models for inclusion in 2-D device simulators.

InP and InGaAs Submicron Gate Microwave Power Transistors for 20 GHz Applications

DTIC Science & Technology

1991-06-01

APLIC ( ATIO NS I:F ( 6 AUTHORiSI VI )N4Wh 7 ERFORMLNG ORGANIZATION NAME(IS) AND ADORE SCISI S Naval Ocean Systems Center San DiegEE, CA 92152-5300(0 9...electronic material for high frequency applications. In0 .5 3Ga. 4 7 As lattice matched to semi-insulating (SI) InP has higher low field mobility , peak...lattice parameter was < ±5 x 10- 4 . The InGaAs mobility at 300 K was 5500 cm 2/V sec. For the device fabrication, the samples were initially cleaned

25th anniversary article: organic field-effect transistors: the path beyond amorphous silicon.

PubMed

Sirringhaus, Henning

2014-03-05

Over the past 25 years, organic field-effect transistors (OFETs) have witnessed impressive improvements in materials performance by 3-4 orders of magnitude, and many of the key materials discoveries have been published in Advanced Materials. This includes some of the most recent demonstrations of organic field-effect transistors with performance that clearly exceeds that of benchmark amorphous silicon-based devices. In this article, state-of-the-art in OFETs are reviewed in light of requirements for demanding future applications, in particular active-matrix addressing for flexible organic light-emitting diode (OLED) displays. An overview is provided over both small molecule and conjugated polymer materials for which field-effect mobilities exceeding > 1 cm(2) V(-1) s(-1) have been reported. Current understanding is also reviewed of their charge transport physics that allows reaching such unexpectedly high mobilities in these weakly van der Waals bonded and structurally comparatively disordered materials with a view towards understanding the potential for further improvement in performance in the future. © 2014 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Glaucoma and disability: which tasks are affected, and at what stage of disease?

PubMed

Ramulu, Pradeep

2009-03-01

To summarize recent work from clinical and epidemiological studies that describe how, and at what stage, glaucoma affects the performance of important vision-related activities. Difficulties with the extremes of lighting are the most frequent complaint in glaucoma. Individuals with bilateral glaucoma also self-report difficulty with a broad array of tasks, including reading, walking, and driving. Bilateral glaucoma is associated with driving cessation and limitation, bumping into objects, slower walking, and falls. Some, but not all, studies also demonstrate higher accident rates in glaucoma. Measurable effects on reading speed have only been observed with field damage severe enough to affect binocular central acuity. Glaucoma with bilateral visual field loss is associated with increased symptoms and a measurable decline in mobility and driving. Further work is necessary to establish whether unilateral glaucoma has a significant impact on patients, to determine whether reading difficulty is common in patients with bilateral glaucoma, and to establish the effects of lighting conditions on task performance in glaucoma.

Surface Modulation of Graphene Field Effect Transistors on Periodic Trench Structure.

PubMed

Jin, Jun Eon; Choi, Jun Hee; Yun, Hoyeol; Jang, Ho-Kyun; Lee, Byung Chul; Choi, Ajeong; Joo, Min-Kyu; Dettlaff-Weglikowska, Urszula; Roth, Siegmar; Lee, Sang Wook; Lee, Jae Woo; Kim, Gyu Tae

2016-07-20

In this work, graphene field effect transistors (FETs) were fabricated on a trench structure made by carbonized poly(methylmethacrylate) to modify the graphene surface. The trench-structured devices showed different characteristics depending on the channel orientation and the pitch size of the trenches as well as channel area in the FETs. Periodic corrugations and barriers of suspended graphene on the trench structure were measured by atomic force microscopy and electrostatic force microscopy. Regular barriers of 160 mV were observed for the trench structure with graphene. To confirm the transfer mechanism in the FETs depending on the channel orientation, the ratio of experimental mobility (3.6-3.74) was extracted from the current-voltage characteristics using equivalent circuit simulation. It is shown that the number of barriers increases as the pitch size decreases because the number of corrugations increases from different trench pitches. The noise for the 140 nm pitch trench is 1 order of magnitude higher than that for the 200 nm pitch trench.

Mobile phone use and possible cancer risk: Current perspectives in India.

PubMed

Meena, Jitendra Kumar; Verma, Anjana; Kohli, Charu; Ingle, Gopal Krishna

2016-01-01

Mobile communication is now essentially ruling our daily lives through better connectivity and intelligent smartphone services. There has been a tremendous growth in Indian communication industry along with growing concerns regarding health effects of mobile radiation exposure. Concerns posed are especially regarding carcinogenesis and other health-related effects of mobile radiation exposure. In the effort to establish or refute any such concerns, many studies have been undertaken in the past three decades, mostly case-control designs or cross-sectional surveys. However, most of them considerably failed to establish causal association primarily owing to potential biases and errors in their conduct and analysis. Past cohort studies have provided contradictory results leading to continued uncertainty regarding tumorigenic potential of mobile radiation exposure. In India, there remains a huge knowledge gap pertaining to this particular topic and only few studies are presently underway such as the Indian Council of Medical Research (ICMR) cell phone study in the National capital region (NCR). International Agency for Research on Cancer (IARC) has classified radiofrequency electromagnetic fields associated with wireless phone use as possibly carcinogenic to humans (Group 2B), causing major concerns worldwide among mobile companies and subscribers equivocally. The World Health Organization (WHO) is presently carrying formal risk assessment of all studied health outcomes from radio frequency field's exposures and is likely to publish it by the year 2016.

Mobile healthcare applications: system design review, critical issues and challenges.

PubMed

Baig, Mirza Mansoor; GholamHosseini, Hamid; Connolly, Martin J

2015-03-01

Mobile phones are becoming increasingly important in monitoring and delivery of healthcare interventions. They are often considered as pocket computers, due to their advanced computing features, enhanced preferences and diverse capabilities. Their sophisticated sensors and complex software applications make the mobile healthcare (m-health) based applications more feasible and innovative. In a number of scenarios user-friendliness, convenience and effectiveness of these systems have been acknowledged by both patients as well as healthcare providers. M-health technology employs advanced concepts and techniques from multidisciplinary fields of electrical engineering, computer science, biomedical engineering and medicine which benefit the innovations of these fields towards healthcare systems. This paper deals with two important aspects of current mobile phone based sensor applications in healthcare. Firstly, critical review of advanced applications such as; vital sign monitoring, blood glucose monitoring and in-built camera based smartphone sensor applications. Secondly, investigating challenges and critical issues related to the use of smartphones in healthcare including; reliability, efficiency, mobile phone platform variability, cost effectiveness, energy usage, user interface, quality of medical data, and security and privacy. It was found that the mobile based applications have been widely developed in recent years with fast growing deployment by healthcare professionals and patients. However, despite the advantages of smartphones in patient monitoring, education, and management there are some critical issues and challenges related to security and privacy of data, acceptability, reliability and cost that need to be addressed.

Low-voltage high-performance organic thin film transistors with a thermally annealed polystyrene/hafnium oxide dielectric

NASA Astrophysics Data System (ADS)

Wang, Ying; Acton, Orb; Ting, Guy; Weidner, Tobias; Ma, Hong; Castner, David G.; Jen, Alex K.-Y.

2009-12-01

Low-voltage pentacene-based organic thin film transistors (OTFTs) are demonstrated with polystyrene (PS)/hafnium oxide (HfOx) hybrid dielectrics. Thermal annealing of PS films on HfOx at 120 °C (PS-120) induces a flatter orientation of the phenyl groups (tilt angle 65°) at the surface compared to PS films without annealing (PS-RT) (tilt angle 31°). The flatter phenyl group orientation leads to better matching of surface energy between pentacene and PS. Pentacene deposited on PS-120 display higher quality thin films with larger grain sizes and higher crystallinity. Pentacene OTFTs with PS-120/HfOx hybrid dielectrics can operate at low-voltage (<3 V) with high field-effect mobilities (1 cm2/V s), high on/off current ratios (106), and low subthreshold slopes (100 mV/dec).

Measurement of acetates in air using differential ion mobility spectrometer

NASA Astrophysics Data System (ADS)

Szczurek, Andrzej; Maciejewska, Monika; Zajiczek, Żaneta; Maziejuk, Mirosław

2017-11-01

Volatile organic compounds are one of the most important group of air pollutants. Potential health and environmental problems resulting from their emission prompted the requirement for monitoring these species. It motivates development of new measurement techniques which are fast, cost effective, reliable and field deployable. One of novel approaches is ion mobility spectrometry. It dwells on ion separation in electric field, based on differences in ion mobility. Many variants of this method are developed. In this wok, differential ion mobility spectrometry (DMS) was considered in respect of acetate measurements in air. It was demonstrated that DMS offers linear response to methyl, ethyl, propyl and butyl acetate in concentration range from 0.3 ppm to 7 ppm. Positive ions spectrum has to be utilised for this purpose. We showed that fragments of DMS spectrum which secure linearity are compound-specific. The obtained results are promising from the application point of view.

Assessment of potential effects of the electromagnetic fields of mobile phones on hearing

PubMed Central

Uloziene, Ingrida; Uloza, Virgilijus; Gradauskiene, Egle; Saferis, Viktoras

2005-01-01

Background Mobile phones have become indispensable as communication tools; however, to date there is only a limited knowledge about interaction between electromagnetic fields (EMF) emitted by mobile phones and auditory function. The aim of the study was to assess potential changes in hearing function as a consequence of exposure to low-intensity EMF's produced by mobile phones at frequencies of 900 and 1800 MHz. Methods The within-subject study was performed on thirty volunteers (age 18–30 years) with normal hearing to assess possible acute effect of EMF. Participants attended two sessions: genuine and sham exposure of EMF. Hearing threshold levels (HTL) on pure tone audiometry (PTA) and transient evoked otoacoustic emissions (TEOAE's) were recorded before and immediately after 10 min of genuine and/or sham exposure of mobile phone EMF. The administration of genuine or sham exposure was double blind and counterbalanced in order. Results Statistical analysis revealed no significant differences in the mean HTLs of PTA and mean shifts of TEOAE's before and after genuine and/or sham mobile phone EMF 10 min exposure. The data collected showed that average TEOAE levels (averaged across a frequency range) changed less than 2.5 dB between pre- and post-, genuine and sham exposure. The greatest individual change was 10 dB, with a decrease in level from pre- to post- real exposure. Conclusion It could be concluded that a 10-min close exposure of EMFs emitted from a mobile phone had no immediate after-effect on measurements of HTL of PTA and TEOAEs in young human subjects and no measurable hearing deterioration was detected in our study. PMID:15840162

Investigation of OSL signal of resistors from mobile phones for accidental dosimetry

NASA Astrophysics Data System (ADS)

Mrozik, A.; Marczewska, B.; Bilski, P.; Gieszczyk, W.

2014-12-01

Resistors from mobile phones, usually located near the human body, are considered as individual dosimeters of ionizing radiation in emergency situations. The resistors contain Al2O3, which is optically stimulated luminescence (OSL) material sensitive to ionizing radiation. This work is focused on determination of dose homogeneity within a mobile phones which was carried out by OSL measurements of resistors placed in different parts inside the mobile phone. Separate, commercially available resistors, similar in the shape and size to the resistors from circuit board of the studied mobile phone, were situated in different locations inside it. The irradiations were performed in uniform 60Co and 137Cs radiation fields, with the mobile phones connected and not connected to the cellular network. The dose decrease of 9% was measured for original resistors situated between layer of copper-clad laminate and battery, in comparison to the dose at the front of the phone. The resistors showed the lower signal when the mobile phone was connected to the cellular network, due to higher temperature inside the housing. The profile of fading was investigated within 3 month period for resistors irradiated with 1 Gy of gamma rays to estimate of the fading coefficient.

Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures.

PubMed

Wan, Zhong; Kazakov, Aleksandr; Manfra, Michael J; Pfeiffer, Loren N; West, Ken W; Rokhinson, Leonid P

2015-06-11

Search for Majorana fermions renewed interest in semiconductor-superconductor interfaces, while a quest for higher-order non-Abelian excitations demands formation of superconducting contacts to materials with fractionalized excitations, such as a two-dimensional electron gas in a fractional quantum Hall regime. Here we report induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures and development of highly transparent semiconductor-superconductor ohmic contacts. Supercurrent with characteristic temperature dependence of a ballistic junction has been observed across 0.6 μm, a regime previously achieved only in point contacts but essential to the formation of well separated non-Abelian states. High critical fields (>16 T) in NbN contacts enables investigation of an interplay between superconductivity and strongly correlated states in a two-dimensional electron gas at high magnetic fields.

Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures

PubMed Central

Wan, Zhong; Kazakov, Aleksandr; Manfra, Michael J.; Pfeiffer, Loren N.; West, Ken W.; Rokhinson, Leonid P.

2015-01-01

Search for Majorana fermions renewed interest in semiconductor–superconductor interfaces, while a quest for higher-order non-Abelian excitations demands formation of superconducting contacts to materials with fractionalized excitations, such as a two-dimensional electron gas in a fractional quantum Hall regime. Here we report induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures and development of highly transparent semiconductor–superconductor ohmic contacts. Supercurrent with characteristic temperature dependence of a ballistic junction has been observed across 0.6 μm, a regime previously achieved only in point contacts but essential to the formation of well separated non-Abelian states. High critical fields (>16 T) in NbN contacts enables investigation of an interplay between superconductivity and strongly correlated states in a two-dimensional electron gas at high magnetic fields. PMID:26067452

[Effects of electromagnetic field from cellular phones on selected central nervous system functions: a literature review].

PubMed

Bak, Marek; Zmyślony, Marek

2010-01-01

In the opinion of some experts, a growing emission of man-made electromagnetic fields (EMF), also known as electromagnetic is a source of continuously increasing health hazards to the general population. Due to their large number and very close proximity to the user's head, mobile phones deserve special attention. This work is intended to give a systematic review of objective studies, assessing the effects of mobile phone EMF on the functions of the central nervous system (CNS) structures. Our review shows that short exposures to mobile phone EMF, experienced by telephone users during receiving calls, do not affect the cochlear function. Effects of GSM mobile phone EMF on the conduction of neural impulses from the inner car neurons to the brainstem auditory centres have not been detected either. If Picton's principle, saying that P300 amplitude varies with the improbability of the targets and its latency varies with difficulty of discriminating the target stimulus from standard stimuli, is true, EMF changes the improbability of the targets without hindering their discrimination. Experiments with use of indirect methods do not enable unequivocal verification of EMF effects on the cognitive functions due to the CNS anatomical and functional complexity. Thus, it seems advisable to develop a model of EMF effects on the excitable brain structures at the cellular level.

Ion-mobility study of two functionalized pentacene structural isomers using a modified electrospray/triple quadrupole mass spectrometer

NASA Astrophysics Data System (ADS)

Prada, Svitlana V.; Bohme, Diethard K.; Baranov, Vladimir I.

2007-03-01

We report ion-mobility measurements with a modified triple quadrupole mass spectrometer fitted with an ion molecule reactor (IMR) designed to investigate ion molecule reactivity in organic mass spectrometry. Functionalized pentacene ions, which are generally unreactive were chosen for study to decouple drift/diffusion effects from reactivity (including clustering). The IMR is equipped with a variable axial electrostatic drift field (ADF) and is able to trap ions. These capabilities were successfully employed in the measurement of ion mobilities in different modes of IMR operation. Theoretical modeling of the drift dynamics and the special localization of the large ion packet was successfully implemented. The contribution of the quadrupole RF field to the drift dynamics also was taken into consideration.

Exposure to Radiofrequency Electromagnetic Fields From Wi-Fi in Australian Schools

PubMed Central

Karipidis, Ken; Henderson, Stuart; Wijayasinghe, Don; Tjong, Lydiawati; Tinker, Rick

2017-01-01

Abstract The increasing use of Wi-Fi in schools and other places has given rise to public concern that the radiofrequency (RF) electromagnetic fields from Wi-Fi have the potential to adversely affect children. The current study measured typical and peak RF levels from Wi-Fi and other sources in 23 schools in Australia. All of the RF measurements were much lower than the reference levels recommended by international guidelines for protection against established health effects. The typical and peak RF levels from Wi-Fi in locations occupied by children in the classroom were of the order of 10−4 and 10−2% of the exposure guidelines, respectively. Typical RF levels in the classroom were similar between Wi-Fi and radio but higher than other sources. In the schoolyard typical RF levels were higher for radio, TV and mobile phone base stations compared to Wi-Fi. The results of this study showed that the typical RF exposure of children from Wi-Fi at school is very low and comparable or lower to other sources in the environment. PMID:28074013

Exposure to Radiofrequency Electromagnetic Fields From Wi-Fi in Australian Schools.

PubMed

Karipidis, Ken; Henderson, Stuart; Wijayasinghe, Don; Tjong, Lydiawati; Tinker, Rick

2017-08-01

The increasing use of Wi-Fi in schools and other places has given rise to public concern that the radiofrequency (RF) electromagnetic fields from Wi-Fi have the potential to adversely affect children. The current study measured typical and peak RF levels from Wi-Fi and other sources in 23 schools in Australia. All of the RF measurements were much lower than the reference levels recommended by international guidelines for protection against established health effects. The typical and peak RF levels from Wi-Fi in locations occupied by children in the classroom were of the order of 10-4 and 10-2% of the exposure guidelines, respectively. Typical RF levels in the classroom were similar between Wi-Fi and radio but higher than other sources. In the schoolyard typical RF levels were higher for radio, TV and mobile phone base stations compared to Wi-Fi. The results of this study showed that the typical RF exposure of children from Wi-Fi at school is very low and comparable or lower to other sources in the environment. © The Author 2017. Published by Oxford University Press.

Dislocation Mobility and Anomalous Shear Modulus Effect in ^4He Crystals

NASA Astrophysics Data System (ADS)

Malmi-Kakkada, Abdul N.; Valls, Oriol T.; Dasgupta, Chandan

2017-02-01

We calculate the dislocation glide mobility in solid ^4He within a model that assumes the existence of a superfluid field associated with dislocation lines. Prompted by the results of this mobility calculation, we study within this model the role that such a superfluid field may play in the motion of the dislocation line when a stress is applied to the crystal. To do this, we relate the damping of dislocation motion, calculated in the presence of the assumed superfluid field, to the shear modulus of the crystal. As the temperature increases, we find that a sharp drop in the shear modulus will occur at the temperature where the superfluid field disappears. We compare the drop in shear modulus of the crystal arising from the temperature dependence of the damping contribution due to the superfluid field, to the experimental observation of the same phenomena in solid ^4He and find quantitative agreement. Our results indicate that such a superfluid field plays an important role in dislocation pinning in a clean solid ^4He at low temperatures and in this regime may provide an alternative source for the unusual elastic phenomena observed in solid ^4He.

Development of a Fourier-transform ion cyclotron resonance mass spectrometer-ion mobility spectrometer

NASA Astrophysics Data System (ADS)

Bluhm, Brian K.; Gillig, Kent J.; Russell, David H.

2000-11-01

In an effort to incorporate ion-molecule reaction chemistry with ion mobility measurements we designed and constructed a novel instrument that combines a Fourier-transform ion cyclotron resonance (ICR) mass spectrometer with an ion mobility drift cell and a time-of-flight mass spectrometer. Measured mobilities for Ar+ and CO+ in helium are in excellent agreement with accepted literature values demonstrating that there are no adverse effects from the magnetic field on ion mobility measurements. Drift cell pressure, extracted from the measured mobility of Ar+ in helium, indicate that a pressure of ˜0.25 Torr is achieved in the present configuration. There are significant technological challenges associated with combining ICR and ion mobility that occurred during construction of this instrument, such as differential pumping and aperture alignment are presented.

Colloid mobilization and heavy metal transport in the sampling of soil solution from Duckum soil in South Korea.

PubMed

Lee, Seyong; Ko, Il-Won; Yoon, In-Ho; Kim, Dong-Wook; Kim, Kyoung-Woong

2018-03-24

Colloid mobilization is a significant process governing colloid-associated transport of heavy metals in subsurface environments. It has been studied for the last three decades to understand this process. However, colloid mobilization and heavy metal transport in soil solutions have rarely been studied using soils in South Korea. We investigated the colloid mobilization in a variety of flow rates during sampling soil solutions in sand columns. The colloid concentrations were increased at low flow rates and in saturated regimes. Colloid concentrations increased 1000-fold higher at pH 9.2 than at pH 7.3 in the absence of 10 mM NaCl solution. In addition, those were fourfold higher in the absence than in the presence of the NaCl solution at pH 9.2. It was suggested that the mobility of colloids should be enhanced in porous media under the basic conditions and the low ionic strength. In real field soils, the concentrations of As, Cr, and Pb in soil solutions increased with the increase in colloid concentrations at initial momentarily changed soil water pressure, whereas the concentrations of Cd, Cu, Fe, Ni, Al, and Co lagged behind the colloid release. Therefore, physicochemical changes and heavy metal characteristics have important implications for colloid-facilitated transport during sampling soil solutions.

Hysteresis Loss Analysis of Soft Magnetic Materials Under Direct Current Bias Conditions (Preprint)

DTIC Science & Technology

2015-09-01

activation energies may not contribute to the magnetization process and higher energy walls may be mobilized, which would not be activated otherwise...measured hysteresis losses for the same Metglas core at a fixed Bmax of 0.1 Tesla . The origin of the observed behavior is easily understood by comparing...constant at 0.1 Tesla by changing the value of the applied field for each bias field, are given in Figure 5 for the Metglas material. Comparison of Figures

Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

DOE PAGES

Luengo-Kovac, Marta; Huang, Simon; Del Gaudio, Davide; ...

2017-11-16

Here, the current-induced spin polarization and momentum-dependent spin-orbit field were measured in In xGa 1-xAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin-polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbitmore » coupling, are found to reproduce the experimental finding that the crystal direction with the smaller net spin-orbit field has larger electrical spin generation efficiency and are used to predict how sample parameters affect the magnitude of the current-induced spin polarization.« less

FDTD chiral brain tissue model for specific absorption rate determination under radiation from mobile phones at 900 and 1800 MHz

NASA Astrophysics Data System (ADS)

Zamorano, M.; Torres-Silva, H.

2006-04-01

A new electrodynamics model formed by chiral bioplasma, which represents the human head inner structure and makes it possible to analyse its behaviour when it is irradiated by a microwave electromagnetic field from cellular phones, is presented. The finite-difference time-domain (FDTD) numeric technique is used, which allows simulation of the electromagnetic fields, deduced with Maxwell's equations, and allows us to simulate the specific absorption rate (SAR). The results show the SAR behaviour as a function of the input power and the chirality factor. In considering the chiral brain tissue in the proposed human head model, the two more important conclusions of our work are the following: (a) the absorption of the electromagnetic fields from cellular phones is stronger, so the SAR coefficient is higher than that using the classical model, when values of the chiral factor are of order of 1; (b) 'inverse skin effect' shows up at 1800 MHz, with respect to a 900 MHz source.

Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luengo-Kovac, Marta; Huang, Simon; Del Gaudio, Davide

Here, the current-induced spin polarization and momentum-dependent spin-orbit field were measured in In xGa 1-xAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin-polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbitmore » coupling, are found to reproduce the experimental finding that the crystal direction with the smaller net spin-orbit field has larger electrical spin generation efficiency and are used to predict how sample parameters affect the magnitude of the current-induced spin polarization.« less

Spatial and temporal variability of personal environmental exposure to radio frequency electromagnetic fields in children in Europe.

PubMed

Birks, Laura Ellen; Struchen, Benjamin; Eeftens, Marloes; van Wel, Luuk; Huss, Anke; Gajšek, Peter; Kheifets, Leeka; Gallastegi, Mara; Dalmau-Bueno, Albert; Estarlich, Marisa; Fernandez, Mariana F; Meder, Inger Kristine; Ferrero, Amparo; Jiménez-Zabala, Ana; Torrent, Maties; Vrijkotte, Tanja G M; Cardis, Elisabeth; Olsen, Jørn; Valič, Blaž; Vermeulen, Roel; Vrijheid, Martine; Röösli, Martin; Guxens, Mònica

2018-08-01

Exposure to radiofrequency electromagnetic fields (RF-EMF) has rapidly increased and little is known about exposure levels in children. This study describes personal RF-EMF environmental exposure levels from handheld devices and fixed site transmitters in European children, the determinants of this, and the day-to-day and year-to-year repeatability of these exposure levels. Personal environmental RF-EMF exposure (μW/m 2 , power flux density) was measured in 529 children (ages 8-18 years) in Denmark, the Netherlands, Slovenia, Switzerland, and Spain using personal portable exposure meters for a period of up to three days between 2014 and 2016, and repeated in a subsample of 28 children one year later. The meters captured 16 frequency bands every 4 s and incorporated a GPS. Activity diaries and questionnaires were used to collect children's location, use of handheld devices, and presence of indoor RF-EMF sources. Six general frequency bands were defined: total, digital enhanced cordless telecommunications (DECT), television and radio antennas (broadcast), mobile phones (uplink), mobile phone base stations (downlink), and Wireless Fidelity (WiFi). We used adjusted mixed effects models with region random effects to estimate associations of handheld device use habits and indoor RF-EMF sources with personal RF-EMF exposure. Day-to-day and year-to-year repeatability of personal RF-EMF exposure were calculated through intraclass correlations (ICC). Median total personal RF-EMF exposure was 75.5 μW/m 2 . Downlink was the largest contributor to total exposure (median: 27.2 μW/m 2 ) followed by broadcast (9.9 μW/m 2 ). Exposure from uplink (4.7 μW/m 2 ) was lower. WiFi and DECT contributed very little to exposure levels. Exposure was higher during day (94.2 μW/m 2 ) than night (23.0 μW/m 2 ), and slightly higher during weekends than weekdays, although varying across regions. Median exposures were highest while children were outside (157.0 μW/m 2 ) or traveling (171.3 μW/m 2 ), and much lower at home (33.0 μW/m 2 ) or in school (35.1 μW/m 2 ). Children living in urban environments had higher exposure than children in rural environments. Older children and users of mobile phones had higher uplink exposure but not total exposure, compared to younger children and those that did not use mobile phones. Day-to-day repeatability was moderate to high for most of the general frequency bands (ICCs between 0.43 and 0.85), as well as for total, broadcast, and downlink for the year-to-year repeatability (ICCs between 0.49 and 0.80) in a small subsample. The largest contributors to total personal environmental RF-EMF exposure were downlink and broadcast, and these exposures showed high repeatability. Urbanicity was the most important determinant of total exposure and mobile phone use was the most important determinant of uplink exposure. It is important to continue evaluating RF-EMF exposure in children as device use habits, exposure levels, and main contributing sources may change. Copyright © 2018 Elsevier Ltd. All rights reserved.

Mobile Infrared Thermographic Surveys Of Buildings Within A Community

NASA Astrophysics Data System (ADS)

Allen, Sharon

1988-01-01

Over the years, constant developments and improvements have been made in the portability of infrared equipment. The ability to move around and travel from job to job easily greatly enhances the effectiveness of most in-field infrared thermographic surveys. Many vehicles have been modified to offer mobile infrared thermographic services. This paper describes one approach, and the results, to mobile infrared thermography. It covers the various stages in adapting a vehicle for mobile infrared thermography (IR) and problems encountered along the way. Originally designed for scanning electrical distribution lines, the "IR Van" also serves as a mobile unit for building diagnostics. The paper addresses building diagnostic applications for mobile IR and some of the findings recorded during an initial community investigation.

Three-dimensional fractional-spin gravity

NASA Astrophysics Data System (ADS)

Boulanger, Nicolas; Sundell, Per; Valenzuela, Mauricio

2014-02-01

Using Wigner-deformed Heisenberg oscillators, we construct 3D Chern-Simons models consisting of fractional-spin fields coupled to higher-spin gravity and internal nonabelian gauge fields. The gauge algebras consist of Lorentz-tensorial Blencowe-Vasiliev higher-spin algebras and compact internal algebras intertwined by infinite-dimensional generators in lowest-weight representations of the Lorentz algebra with fractional spin. In integer or half-integer non-unitary cases, there exist truncations to gl(ℓ , ℓ ± 1) or gl(ℓ|ℓ ± 1) models. In all non-unitary cases, the internal gauge fields can be set to zero. At the semi-classical level, the fractional-spin fields are either Grassmann even or odd. The action requires the enveloping-algebra representation of the deformed oscillators, while their Fock-space representation suffices on-shell. The project was funded in part by F.R.S.-FNRS " Ulysse" Incentive Grant for Mobility in Scientific Research.

Pentacene-based low voltage organic field-effect transistors with anodized Ta2O5 gate dielectric

NASA Astrophysics Data System (ADS)

Jeong, Yeon Taek; Dodabalapur, Ananth

2007-11-01

Pentacene-based low voltage organic field-effect transistors were realized using an anodized Ta2O5 gate dielectric. The Ta2O5 gate dielectric layer with a surface roughness of 1.3Å was obtained by anodizing an e-beam evaporated Ta film. The device exhibited values of saturation mobility, threshold voltage, and Ion/Ioff ratio of 0.45cm2/Vs, 0.56V, and 7.5×101, respectively. The gate leakage current was reduced by more than 70% with a hexamethyldisilazane (HMDS) treatment on the Ta2O5 layer. The HMDS treatment also resulted in enhanced mobility values and a larger pentacene grain size.

A Framework for Mobile Learning for Enhancing Learning in Higher Education

ERIC Educational Resources Information Center

Barreh, Kadar Abdillahi; Abas, Zoraini Wati

2015-01-01

As mobile learning becomes increasingly pervasive, many higher education institutions have initiated a number of mobile learning initiatives to support their traditional learning modes. This study proposes a framework for mobile learning for enhancing learning in higher education. This framework for mobile learning is based on research conducted…

Long-term mobile phone use and acoustic neuroma risk.

PubMed

Pettersson, David; Mathiesen, Tiit; Prochazka, Michaela; Bergenheim, Tommy; Florentzson, Rut; Harder, Henrik; Nyberg, Gunnar; Siesjö, Peter; Feychting, Maria

2014-03-01

There is concern about potential effects of radiofrequency fields generated by mobile phones on cancer risk. Most previous studies have found no association between mobile phone use and acoustic neuroma, although information about long-term use is limited. We conducted a population-based, nation-wide, case-control study of acoustic neuroma in Sweden. Eligible cases were persons aged 20 to 69 years, who were diagnosed between 2002 and 2007. Controls were randomly selected from the population registry, matched on age, sex, and residential area. Postal questionnaires were completed by 451 cases (83%) and 710 controls (65%). Ever having used mobile phones regularly (defined as weekly use for at least 6 months) was associated with an odds ratio (OR) of 1.18 (95% confidence interval = 0.88 to 1.59). The association was weaker for the longest induction time (≥10 years) (1.11 [0.76 to 1.61]) and for regular use on the tumor side (0.98 [0.68 to 1.43]). The OR for the highest quartile of cumulative calling time (≥680 hours) was 1.46 (0.98 to 2.17). Restricting analyses to histologically confirmed cases reduced all ORs; the OR for ≥680 hours was 1.14 (0.63 to 2.07). A similar pattern was seen for cordless land-line phones, although with slightly higher ORs. Analyses of the complete history of laterality of mobile phone revealed considerable bias in laterality analyses. The findings do not support the hypothesis that long-term mobile phone use increases the risk of acoustic neuroma. The study suggests that phone use might increase the likelihood that an acoustic neuroma case is detected and that there could be bias in the laterality analyses performed in previous studies.

Mobile phone use and brain tumours in the CERENAT case-control study.

PubMed

Coureau, Gaëlle; Bouvier, Ghislaine; Lebailly, Pierre; Fabbro-Peray, Pascale; Gruber, Anne; Leffondre, Karen; Guillamo, Jean-Sebastien; Loiseau, Hugues; Mathoulin-Pélissier, Simone; Salamon, Roger; Baldi, Isabelle

2014-07-01

The carcinogenic effect of radiofrequency electromagnetic fields in humans remains controversial. However, it has been suggested that they could be involved in the aetiology of some types of brain tumours. The objective was to analyse the association between mobile phone exposure and primary central nervous system tumours (gliomas and meningiomas) in adults. CERENAT is a multicenter case-control study carried out in four areas in France in 2004-2006. Data about mobile phone use were collected through a detailed questionnaire delivered in a face-to-face manner. Conditional logistic regression for matched sets was used to estimate adjusted ORs and 95% CIs. A total of 253 gliomas, 194 meningiomas and 892 matched controls selected from the local electoral rolls were analysed. No association with brain tumours was observed when comparing regular mobile phone users with non-users (OR=1.24; 95% CI 0.86 to 1.77 for gliomas, OR=0.90; 95% CI 0.61 to 1.34 for meningiomas). However, the positive association was statistically significant in the heaviest users when considering life-long cumulative duration (≥896 h, OR=2.89; 95% CI 1.41 to 5.93 for gliomas; OR=2.57; 95% CI 1.02 to 6.44 for meningiomas) and number of calls for gliomas (≥18,360 calls, OR=2.10, 95% CI 1.03 to 4.31). Risks were higher for gliomas, temporal tumours, occupational and urban mobile phone use. These additional data support previous findings concerning a possible association between heavy mobile phone use and brain tumours. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://group.bmj.com/group/rights-licensing/permissions.

The promise and peril of mobile health applications for diabetes and endocrinology.

PubMed

Eng, Donna S; Lee, Joyce M

2013-06-01

We are in the midst of what some have called a "mobile health revolution". Medical applications ("apps") for mobile phones are proliferating in the marketplace and clinicians are likely encountering patients with questions about the medical value of these apps. We conducted a review of medical apps focused on endocrine disease. We found a higher percentage of relevant apps in our searches of the iPhone app store compared with the Android marketplace. For our diabetes search in the iPhone store, the majority of apps (33%) focused on health tracking (blood sugars, insulin doses, carbohydrates), requiring manual entry of health data. Only two apps directly inputted blood sugars from glucometers attached to the mobile phone. The remainder of diabetes apps were teaching/training apps (22%), food reference databases (8%), social blogs/forums (5%), and physician directed apps (8%). We found a number of insulin dose calculator apps which technically meet criteria for being a medically regulated mobile application, but did not find evidence for FDA-approval despite their availability to consumers. Far fewer apps were focused on other endocrine disease and included medical reference for the field of endocrinology, access to endocrine journals, height predictors, medication trackers, and fertility apps. Although mobile health apps have great potential for improving chronic disease care, they face a number of challenges including lack of evidence of clinical effectiveness, lack of integration with the health care delivery system, the need for formal evaluation and review and organized searching for health apps, and potential threats to safety and privacy. © 2013 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

The pattern of the electromagnetic field emitted by mobile phones in motor vehicle driving simulators.

PubMed

Politański, Piotr; Bortkiewicz, Alicja; Zmyślony, Marek

2013-06-01

The paper reports the results of the determinations of UMTS EMF distributions in the driver’s cab of motor vehicle simulators. The results will serve as the basis for future research on the influence of EMF emitted by mobile phones on driver physiology. Two motor vehicle driving simulators were monitored, while an EMF source was placed at the driver's head or on the dashboard of the motor vehicle driving simulator. For every applied configuration, the maximal electric field strength was measured, as were the values at 16 points corresponding to chosen locations on a driver's or passenger's body. When the power was set for the maximum (49 mW), a value of 27 V/m was measured in the vicinity of the driver's head when the phone was close to the head. With the same power, when the phone was placed on the dashboard, the measured maximum was 15.2 V/m in the vicinity of the driver's foot. Similar results were obtained for the passenger. Significant perturbations in EMF distribution and an increase in electric field strength values in the mo-tor vehicle driving simulator were also observed in comparison to free space measurements, and the electric field strength was up to 3 times higher inside the simulator. This study can act as the basis of future studies concerning the influence of the EMF emitted by mobile phones on the physiology of the driver. Additionally, the authors postulate that it is advisable to keep mobile phones at a distance from the head, i.e. use, whenever possible, hands-free kits to reduce EMF exposure, both for drivers and passengers.

Spatial heterogeneity of mobilization processes and input pathways of herbicides into a brook in a small agricultural catchment

NASA Astrophysics Data System (ADS)

Doppler, Tobias; Lück, Alfred; Popow, Gabriel; Strahm, Ivo; Winiger, Luca; Gaj, Marcel; Singer, Heinz; Stamm, Christian

2010-05-01

Soil applied herbicides can be transported from their point of application (agricultural field) to surface waters during rain events. There they can have harmful effects on aquatic species. Since the spatial distribution of mobilization and transport processes is very heterogeneous, the contributions of different fields to the total load in a surface water body may differ considerably. The localization of especially critical areas (contributing areas) can help to efficiently minimize herbicide inputs to surface waters. An agricultural field becomes a contributing area when three conditions are met: 1) herbicides are applied, 2) herbicides are mobilized on the field and 3) the mobilized herbicides are transported rapidly to the surface water. In spring 2009, a controlled herbicide application was performed on corn fields in a small (ca 1 km2) catchment with intensive crop production in the Swiss plateau. Subsequently water samples were taken at different locations in the catchment with a high temporal resolution during rain events. We observed both saturation excess and hortonian overland flow during the field campaign. Both can be important mobilization processes depending on the intensity and quantity of the rain. This can lead to different contributing areas during different types of rain events. We will show data on the spatial distribution of herbicide loads during different types of rain events. Also the connectivity of the fields with the brook is spatially heterogeneous. Most of the fields are disconnected from the brook by internal sinks in the catchment, which prevents surface runoff from entering the brook directly. Surface runoff from these disconnected areas can only enter the brook rapidly via macropore-flow into tile drains beneath the internal sinks or via direct shortcuts to the drainage system (maintenance manholes, farmyard or road drains). We will show spatially distributed data on herbicide concentration in purely subsurface systems which shows how important such input pathways can be.

Accuracy assessment of a mobile terrestrial lidar survey at Padre Island National Seashore

USGS Publications Warehouse

Lim, Samsung; Thatcher, Cindy A.; Brock, John C.; Kimbrow, Dustin R.; Danielson, Jeffrey J.; Reynolds, B.J.

2013-01-01

The higher point density and mobility of terrestrial laser scanning (light detection and ranging (lidar)) is desired when extremely detailed elevation data are needed for mapping vertically orientated complex features such as levees, dunes, and cliffs, or when highly accurate data are needed for monitoring geomorphic changes. Mobile terrestrial lidar scanners have the capability for rapid data collection on a larger spatial scale compared with tripod-based terrestrial lidar, but few studies have examined the accuracy of this relatively new mapping technology. For this reason, we conducted a field test at Padre Island National Seashore of a mobile lidar scanner mounted on a sport utility vehicle and integrated with a position and orientation system. The purpose of the study was to assess the vertical and horizontal accuracy of data collected by the mobile terrestrial lidar system, which is georeferenced to the Universal Transverse Mercator coordinate system and the North American Vertical Datum of 1988. To accomplish the study objectives, independent elevation data were collected by conducting a high-accuracy global positioning system survey to establish the coordinates and elevations of 12 targets spaced throughout the 12 km transect. These independent ground control data were compared to the lidar scanner-derived elevations to quantify the accuracy of the mobile lidar system. The performance of the mobile lidar system was also tested at various vehicle speeds and scan density settings (e.g. field of view and linear point spacing) to estimate the optimal parameters for desired point density. After adjustment of the lever arm parameters, the final point cloud accuracy was 0.060 m (east), 0.095 m (north), and 0.053 m (height). The very high density of the resulting point cloud was sufficient to map fine-scale topographic features, such as the complex shape of the sand dunes.

The Importance of Scaffolding the Transition: Unpacking the Null Effects of Relocating Poor Children into Nonpoor Neighborhoods

ERIC Educational Resources Information Center

Keels, Micere

2013-01-01

I examine several potential explanations for recent evidence showing a lack of improvement in the academic achievement of children participating in several poverty reduction residential mobility programs. Detailed interviews and field notes about the relocation and school experiences of 80 children in the Gautreaux II residential mobility program…

Interpretation of inverted photocurrent transients in organic lead halide perovskite solar cells: proof of the field screening by mobile ions and determination of the space charge layer widths

DOE PAGES

Belisle, Rebecca A.; Nguyen, William H.; Bowring, Andrea R.; ...

2017-01-01

In Methyl Ammonium Lead Iodide (MAPI) perovskite solar cells, screening of the built-in field by mobile ions has been proposed as part of the cause of the large hysteresis observed in the current/voltage scans in many cells. Here, we show that photocurrent transients measured immediately (e.g. 100 μs) after a voltage step can provide direct evidence that this field screening exists. Just after a step to forward bias, the photocurrent transients are reversed in sign (i.e. inverted), and the magnitude of the inverted transients can be used to find an upper bound on the width of the space charge layersmore » adjacent to the electrodes. This in turn provides a lower bound on the mobile charge concentration, which we find to be ≳1 x 10 17 cm -3. Using a new photocurrent transient experiment, we show that the space charge layer thickness remains approximately constant as a function of bias, as expected for mobile ions in a solid electrolyte. We also discuss additional characteristics of the inverted photocurrent transients that imply either an unusually stable deep trapping, or a photo effect on the mobile ion conductivity.« less

Interpretation of inverted photocurrent transients in organic lead halide perovskite solar cells: proof of the field screening by mobile ions and determination of the space charge layer widths

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belisle, Rebecca A.; Nguyen, William H.; Bowring, Andrea R.

In Methyl Ammonium Lead Iodide (MAPI) perovskite solar cells, screening of the built-in field by mobile ions has been proposed as part of the cause of the large hysteresis observed in the current/voltage scans in many cells. Here, we show that photocurrent transients measured immediately (e.g. 100 μs) after a voltage step can provide direct evidence that this field screening exists. Just after a step to forward bias, the photocurrent transients are reversed in sign (i.e. inverted), and the magnitude of the inverted transients can be used to find an upper bound on the width of the space charge layersmore » adjacent to the electrodes. This in turn provides a lower bound on the mobile charge concentration, which we find to be ≳1 x 10 17 cm -3. Using a new photocurrent transient experiment, we show that the space charge layer thickness remains approximately constant as a function of bias, as expected for mobile ions in a solid electrolyte. We also discuss additional characteristics of the inverted photocurrent transients that imply either an unusually stable deep trapping, or a photo effect on the mobile ion conductivity.« less

Oriented Liquid Crystalline Polymer Semiconductor Films with Large Ordered Domains.

PubMed

Xue, Xiao; Chandler, George; Zhang, Xinran; Kline, R Joseph; Fei, Zhuping; Heeney, Martin; Diemer, Peter J; Jurchescu, Oana D; O'Connor, Brendan T

2015-12-09

Large strains are applied to liquid crystalline poly(2,5-bis(3-tetradecylthiophen-2yl)thieno(3,2-b)thiophene) (pBTTT) films when held at elevated temperatures resulting in in-plane polymer alignment. We find that the polymer backbone aligns significantly in the direction of strain, and that the films maintain large quasi-domains similar to that found in spun-cast films on hydrophobic surfaces, highlighted by dark-field transmission electron microscopy imaging. The highly strained films also have nanoscale holes consistent with dewetting. Charge transport in the films is then characterized in a transistor configuration, where the field effect mobility is shown to increase in the direction of polymer backbone alignment, and decrease in the transverse direction. The highest saturated field-effect mobility was found to be 1.67 cm(2) V(-1) s(-1), representing one of the highest reported mobilities for this material system. The morphology of the oriented films demonstrated here contrast significantly with previous demonstrations of oriented pBTTT films that form a ribbon-like morphology, opening up opportunities to explore how differences in molecular packing features of oriented films impact charge transport. Results highlight the role of grain boundaries, differences in charge transport along the polymer backbone and π-stacking direction, and structural features that impact the field dependence of charge transport.

Calculation of the electron wave function in a graded-channel double-heterojunction modulation-doped field-effect transistor

NASA Technical Reports Server (NTRS)

Mui, D. S. L.; Patil, M. B.; Morkoc, H.

1989-01-01

Three double-heterojunction modulation-doped field-effect transistor structures with different channel composition are investigated theoretically. All of these transistors have an In(x)Ga(1-x)As channel sandwiched between two doped Al(0.3)Ga(0.7)As barriers with undoped spacer layers. In one of the structures, x varies from 0 from either heterojunction to 0.15 at the center of the channel quadratically; in the other two, constant values of x of 0 and 0.15 are used. The Poisson and Schroedinger equations are solved self-consistently for the electron wave function in all three cases. The results showed that the two-dimensional electron gas (2DEG) concentration in the channel of the quadratically graded structure is higher than the x = 0 one and slightly lower than the x = 0.15 one, and the mean distance of the 2DEG is closer to the center of the channel for this transistor than the other two. These two effects have important implications on the electron mobility in the channel.

Pulsed-High Field/High-Frequency EPR Spectroscopy

NASA Astrophysics Data System (ADS)

Fuhs, Michael; Moebius, Klaus

Pulsed high-field/high-frequency electron paramagnetic resonance (EPR) spectroscopy is used to disentangle many kinds of different effects often obscured in continuous wave (cw) EPR spectra at lower magnetic fields/microwave frequencies. While the high magnetic field increases the resolution of G tensors and of nuclear Larmor frequencies, the high frequencies allow for higher time resolution for molecular dynamics as well as for transient paramagnetic intermediates studied with time-resolved EPR. Pulsed EPR methods are used for example for relaxation-time studies, and pulsed Electron Nuclear DOuble Resonance (ENDOR) is used to resolve unresolved hyperfine structure hidden in inhomogeneous linewidths. In the present article we introduce the basic concepts and selected applications to structure and mobility studies on electron transfer systems, reaction centers of photosynthesis as well as biomimetic models. The article concludes with an introduction to stochastic EPR which makes use of an other concept for investigating resonance systems in order to increase the excitation bandwidth of pulsed EPR. The limited excitation bandwidth of pulses at high frequency is one of the main limitations which, so far, made Fourier transform methods hardly feasible.

Origin of the relatively low transport mobility of graphene grown through chemical vapor deposition

PubMed Central

Song, H. S.; Li, S. L.; Miyazaki, H.; Sato, S.; Hayashi, K.; Yamada, A.; Yokoyama, N.; Tsukagoshi, K.

2012-01-01

The reasons for the relatively low transport mobility of graphene grown through chemical vapor deposition (CVD-G), which include point defect, surface contamination, and line defect, were analyzed in the current study. A series of control experiments demonstrated that the determinant factor for the low transport mobility of CVD-G did not arise from point defects or surface contaminations, but stemmed from line defects induced by grain boundaries. Electron microscopies characterized the presence of grain boundaries and indicated the polycrystalline nature of the CVD-G. Field-effect transistors based on CVD-G without the grain boundary obtained a transport mobility comparative to that of Kish graphene, which directly indicated the detrimental effect of grain boundaries. The effect of grain boundary on transport mobility was qualitatively explained using a potential barrier model. Furthermore, the conduction mechanism of CVD-G was also investigated using the temperature dependence measurements. This study can help understand the intrinsic transport features of CVD-G. PMID:22468224

The pattern of mobile phone use and prevalence of self-reported symptoms in elementary and junior high school students in shiraz, iran.

PubMed

Mortazavi, Seyed Mohammad Javad; Atefi, Mohammad; Kholghi, Fatemeh

2011-06-01

The use of mobile phone by children is increasing drastically. Children are likely to accumulate many years of exposure during their lives. Furthermore, as nervous systems in children are developing, children may be at a greater risk compared to adults. In this light, some scientists have suggested that the use of mobile phones should be restricted in high-risk groups such as children. This study is an attempt to explore the pattern of mobile phone use and its health effects among students from the city of Shiraz, Iran. A total of 469 (235 males and 234 females; 250 elementary and 219 junior high school) healthy students participated in this study. The students were randomly selected from three different educational districts of the city. For each student, a questionnaire regarding the possible sources of exposure to electromagnetic fields or microwave radiation, specially the pattern of mobile phone use, medical history and life style was filled out by interviewers. Only 31.42% of the students used to use mobile phones. The average daily time of using mobile phones in talk mode was 7.08±21.42 minutes. Not only the relative frequency of mobile phone ownership in boys was significantly more than the girls, but also the boys used their mobile phones more frequently. Statistically significant associations were found between the time mobile phones were used in talk mode and some symptoms. Furthermore, a statistically significant association was found between the time mobile phones were used in talk mode and the number of headaches per month, number of vertigo per month, or number of sleeping problem per month. RESULTS obtained in this study show that a large proportion of children in the city of Shiraz use mobile phones. A significant increase was found in some self-reported symptoms among users of mobile phones. These findings are in line with what is widely believed regarding the higher vulnerability of children to exhibit symptoms from using mobile phones. The findings and conclusion of the present study should be viewed in the light the nature of symptoms measurement (self-report) and the knowledge and understandings of the participants about the symptoms.

The Pattern of Mobile Phone Use and Prevalence of Self-Reported Symptoms in Elementary and Junior High School Students in Shiraz, Iran

PubMed Central

Mortazavi, Seyed Mohammad Javad; Atefi, Mohammad; Kholghi, Fatemeh

2011-01-01

Background: The use of mobile phone by children is increasing drastically. Children are likely to accumulate many years of exposure during their lives. Furthermore, as nervous systems in children are developing, children may be at a greater risk compared to adults. In this light, some scientists have suggested that the use of mobile phones should be restricted in high-risk groups such as children. This study is an attempt to explore the pattern of mobile phone use and its health effects among students from the city of Shiraz, Iran. Methods: A total of 469 (235 males and 234 females; 250 elementary and 219 junior high school) healthy students participated in this study. The students were randomly selected from three different educational districts of the city. For each student, a questionnaire regarding the possible sources of exposure to electromagnetic fields or microwave radiation, specially the pattern of mobile phone use, medical history and life style was filled out by interviewers. Results: Only 31.42% of the students used to use mobile phones. The average daily time of using mobile phones in talk mode was 7.08±21.42 minutes. Not only the relative frequency of mobile phone ownership in boys was significantly more than the girls, but also the boys used their mobile phones more frequently. Statistically significant associations were found between the time mobile phones were used in talk mode and some symptoms. Furthermore, a statistically significant association was found between the time mobile phones were used in talk mode and the number of headaches per month, number of vertigo per month, or number of sleeping problem per month. Conclusion: Results obtained in this study show that a large proportion of children in the city of Shiraz use mobile phones. A significant increase was found in some self-reported symptoms among users of mobile phones. These findings are in line with what is widely believed regarding the higher vulnerability of children to exhibit symptoms from using mobile phones. The findings and conclusion of the present study should be viewed in the light the nature of symptoms measurement (self-report) and the knowledge and understandings of the participants about the symptoms. PMID:23358105

Investing in communities: evaluating the added value of community mobilization on HIV prevention outcomes among FSWs in India.

PubMed

Kuhlmann, Anne Sebert; Galavotti, Christine; Hastings, Philip; Narayanan, Pradeep; Saggurti, Niranjan

2014-04-01

Community mobilization often requires greater time and resource investments than typical interventions, yet few evaluations exist to justify these investments. We evaluated the added benefit of community mobilization on HIV prevention outcomes among female sex workers (FSWs) using a composite measure of volunteer participation in program committees by FSWs. After adjusting for treatment propensity, we used multilevel structural equation modeling (MSEM) to test our program theory. We hypothesized that stronger community mobilization would be associated with increased levels of consistent condom use and with increased levels of perceived fairness, mediated by psychosocial processes. Community mobilization had an indirect effect on consistent condom use mediated through social cohesion and an indirect effect on perceived fairness mediated by collective efficacy. Our results suggest higher levels of community mobilization help improve condom use and reduce perceived discrimination beyond the effects of the core HIV intervention program. We recommend further testing of this model.

Hyporheic less-mobile porosity and solute transport in porous media

NASA Astrophysics Data System (ADS)

MahmoodPoorDehkordy, F.; Briggs, M. A.; Day-Lewis, F. D.; Scruggs, C.; Singha, K.; Zarnetske, J. P.; Lane, J. W., Jr.; Bagtzoglou, A. C.

2017-12-01

Solute transport and reactive processes are strongly influenced by hydrodynamic exchange with the hyporheic zone. Contaminant transport and redox zonation in the hyporheic zone and near-stream aquifer can be impacted by the exchange between mobile and less-mobile porosity zones in heterogeneous porous media. Less-mobile porosity zones can be created by fine materials with tight pore throats (e.g. clay, organics) and in larger, well-connected pores down gradient of flow obstructions (e.g. sand behind cobbles). Whereas fluid sampling is primarily responsive to the more-mobile domain, tracking solute tracer dynamics by geoelectrical methods provides direct information about both more- and less-mobile zones. During tracer injection through porous media of varied pore connectivity, a lag between fluid and bulk electrical conductivity is observed, creating a hysteresis loop when plotted in conductivity space. Thus, the combination of simultaneous fluid and bulk electrical conductivity measurements enables a much improved quantification of less-mobile solute dynamics compared to traditional fluid-only sampling approaches. We have demonstrated the less-mobile porosity exchange in laboratory-scale column experiments verified by simulation models. The experimental approach has also been applied to streambed sediments in column and reach-scale field experiments and verified using numerical simulation. Properties of the resultant hysteresis loops can be used to estimate exchange parameters of less-mobile porosity. Our integrated approach combining field experiments, laboratory experiments, and numerical modeling provides new insights into the effect of less-mobile porosity on solute transport in the hyporheic zone.

Charge injection engineering of ambipolar field-effect transistors for high-performance organic complementary circuits.

PubMed

Baeg, Kang-Jun; Kim, Juhwan; Khim, Dongyoon; Caironi, Mario; Kim, Dong-Yu; You, In-Kyu; Quinn, Jordan R; Facchetti, Antonio; Noh, Yong-Young

2011-08-01

Ambipolar π-conjugated polymers may provide inexpensive large-area manufacturing of complementary integrated circuits (CICs) without requiring micro-patterning of the individual p- and n-channel semiconductors. However, current-generation ambipolar semiconductor-based CICs suffer from higher static power consumption, low operation frequencies, and degraded noise margins compared to complementary logics based on unipolar p- and n-channel organic field-effect transistors (OFETs). Here, we demonstrate a simple methodology to control charge injection and transport in ambipolar OFETs via engineering of the electrical contacts. Solution-processed caesium (Cs) salts, as electron-injection and hole-blocking layers at the interface between semiconductors and charge injection electrodes, significantly decrease the gold (Au) work function (∼4.1 eV) compared to that of a pristine Au electrode (∼4.7 eV). By controlling the electrode surface chemistry, excellent p-channel (hole mobility ∼0.1-0.6 cm(2)/(Vs)) and n-channel (electron mobility ∼0.1-0.3 cm(2)/(Vs)) OFET characteristics with the same semiconductor are demonstrated. Most importantly, in these OFETs the counterpart charge carrier currents are highly suppressed for depletion mode operation (I(off) < 70 nA when I(on) > 0.1-0.2 mA). Thus, high-performance, truly complementary inverters (high gain >50 and high noise margin >75% of ideal value) and ring oscillators (oscillation frequency ∼12 kHz) based on a solution-processed ambipolar polymer are demonstrated.

Ultrahigh near infrared photoresponsive organic field-effect transistors with lead phthalocyanine/C60 heterojunction on poly(vinyl alcohol) gate dielectric.

PubMed

Sun, Lei; Zhang, Jianping; Zhao, Feiyu; Luo, Xiao; Lv, Wenli; li, Yao; Ren, Qiang; Wen, Zhanwei; Peng, Yingquan; Liu, Xingyuan

2015-05-08

Performances of photoresponsive organic field-effect transistors (photOFETs) operating in the near infrared (NIR) region utilizing SiO2 as the gate dielectric is generally low due to low carrier mobility of the channel. We report on NIR photOFETs based on lead phthalocyanine (PbPc)/C60 heterojunction with ultrahigh photoresponsivity by utilizing poly(vinyl alcohol) (PVA) as the gate dielectric. For 808 nm NIR illumination of 1.69 mW cm(-2), an ultrahigh photoresponsivity of 21 A W(-1), and an external quantum efficiency of 3230% were obtained at a gate voltage of 30 V and a drain voltage of 80 V, which are 124 times and 126 times as large as the reference device with SiO2 as the gate dielectric, respectively. The ultrahigh enhancement of photoresponsivity is resulted from the huge increase of electron mobility of C60 film grown on PVA dielectric. AFM investigations revealed that the C60 film grown on PVA is much smooth and uniform and the grain size is much larger than that grown on SiO2 dielectric, which together results in four orders of magnitude increase of the field-effect electron mobility of C60 film.

Gate dielectric surface treatments for performance improvement of poly(3-hexylthiophene-2,5-diyl) based organic field-effect transistors

NASA Astrophysics Data System (ADS)

Nawaz, Ali; de, Cristiane, , Col; Cruz-Cruz, Isidro; Kumar, Anshu; Kumar, Anil; Hümmelgen, Ivo A.

2015-08-01

We report on enhanced performance in poly(3-hexylthiophene-2,5-diyl) (P3HT) based organic field effect transistors (OFETs) achieved by improvement in hole transport along the channel near the insulator/semiconductor (I/S) interface. The improvement in hole transport is demonstrated to occur very close to the I/S interface, after treatment of the insulator layer with sodium dodecyl sulfate (SDS). SDS is an anionic surfactant, with negatively charged heads, known for formation of micelles above critical micelle concentration (CMC), which contribute to the passivation of positively charged traps. Investigation of field-effect mobility (μFET) as a function of channel bottleneck thickness in OFETs reveals the favorable gate voltage regime where mobility is the highest. In addition, it shows that the gate dielectric surface treatment not only leads to an increase in mobility in that regime, but also displaces charge transport closer to the interface, hence pointing toward passivation of the charge traps at I/S interface. OFETs with SDS treatment were compared with untreated and vitamin C or hexadecyltrimethylammonium bromide (CTAB) treated OFETs. All the treatments resulted in significant improvements in specific dielectric capacitance, μFET, on/off current ratio and transconductance.

Performance regeneration of InGaZnO transistors with ultra-thin channels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Binglei; Li, He; Zhang, Xijian, E-mail: zhangxijian@sdu.edu.cn, E-mail: songam@sdu.edu.cn

2015-03-02

Thin-film transistors (TFTs) based on ultra-thin amorphous indium gallium zinc oxide (a-IGZO) semiconductors down to 4 nm were studied motivated by the increasing cost of indium. At and below 5 nm, it was found that the field-effect mobility was severely degraded, the threshold voltage increased, and the output characteristics became abnormal showing no saturated current. By encapsulating a layer of polymethyl methacrylate on the IGZO TFTs, the performance of the 5-nm-thick device was effectively recovered. The devices also showed much higher on/off ratios, improved hysteresis, and normal output characteristic curves as compared with devices not encapsulated. The stability of the encapsulated devicesmore » was also studied over a four month period.« less

Terahertz time-domain magnetospectroscopy of a high-mobility two-dimensional electron gas.

PubMed

Wang, Xiangfeng; Hilton, David J; Ren, Lei; Mittleman, Daniel M; Kono, Junichiro; Reno, John L

2007-07-01

We have observed cyclotron resonance in a high-mobility GaAs/AlGaAs two-dimensional electron gas by using the techniques of terahertz time-domain spectroscopy combined with magnetic fields. From this, we calculate the real and imaginary parts of the diagonal elements of the magnetoconductivity tensor, which in turn allows us to extract the concentration, effective mass, and scattering time of the electrons in the sample. We demonstrate the utility of ultrafast terahertz spectroscopy, which can recover the true linewidth of cyclotron resonance in a high-mobility (>10(6) cm(2)V(-1)s(-1)) sample without being affected by the saturation effect.

Coarse-grained model of conformation-dependent electrophoretic mobility and its influence on DNA dynamics

NASA Astrophysics Data System (ADS)

Pandey, Harsh; Underhill, Patrick T.

2015-11-01

The electrophoretic mobility of molecules such as λ -DNA depends on the conformation of the molecule. It has been shown that electrohydrodynamic interactions between parts of the molecule lead to a mobility that depends on conformation and can explain some experimental observations. We have developed a new coarse-grained model that incorporates these changes of mobility into a bead-spring chain model. Brownian dynamics simulations have been performed using this model. The model reproduces the cross-stream migration that occurs in capillary electrophoresis when pressure-driven flow is applied parallel or antiparallel to the electric field. The model also reproduces the change of mobility when the molecule is stretched significantly in an extensional field. We find that the conformation-dependent mobility can lead to a new type of unraveling of the molecule in strong fields. This occurs when different parts of the molecule have different mobilities and the electric field is large.

Graphene field-effect devices

NASA Astrophysics Data System (ADS)

Echtermeyer, T. J.; Lemme, M. C.; Bolten, J.; Baus, M.; Ramsteiner, M.; Kurz, H.

2007-09-01

In this article, graphene is investigated with respect to its electronic properties when introduced into field effect devices (FED). With the exception of manual graphene deposition, conventional top-down CMOS-compatible processes are applied. Few and monolayer graphene sheets are characterized by scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The electrical properties of monolayer graphene sandwiched between two silicon dioxide films are studied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from double-gated Graphene-FEDs and silicon metal-oxide-semiconductor field-effect-transistors (MOSFETs).

Vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors.

PubMed

Yi, H T; Chen, Y; Czelen, K; Podzorov, V

2011-12-22

A novel vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors has been developed. The non-destructive nature of this method allows a direct comparison of field-effect mobilities achieved with various gate dielectrics using the same single-crystal sample. The method also allows gating delicate systems, such as n -type crystals and SAM-coated surfaces, without perturbation. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of V2O5/Au bi-layer electrodes on the top contact Pentacene-based organic thin film transistors

NASA Astrophysics Data System (ADS)

Borthakur, Tribeni; Sarma, Ranjit

2017-05-01

Top-contact Pentacene-based organic thin film transistors (OTFTs) with a thin layer of Vanadium Pent-oxide between Pentacene and Au layer are fabricated. Here we have found that the devices with V2O5/Au bi-layer source-drain electrode exhibit better field-effect mobility, high on-off ratio, low threshold voltage and low sub-threshold slope than the devices with Au only. The field-effect mobility, current on-off ratio, threshold voltage and sub-threshold slope of V2O5/Au bi-layer OTFT estimated from the device with 15 nm thick V2O5 layer is .77 cm2 v-1 s-1, 7.5×105, -2.9 V and .36 V/decade respectively.

The effect of the earth's and stray magnetic fields on mobile mass spectrometer systems.

PubMed

Bell, Ryan J; Davey, Nicholas G; Martinsen, Morten; Short, R Timothy; Gill, Chris G; Krogh, Erik T

2015-02-01

Development of small, field-portable mass spectrometers has enabled a rapid growth of in-field measurements on mobile platforms. In such in-field measurements, unexpected signal variability has been observed by the authors in portable ion traps with internal electron ionization. The orientation of magnetic fields (such as the Earth's) relative to the ionization electron beam trajectory can significantly alter the electron flux into a quadrupole ion trap, resulting in significant changes in the instrumental sensitivity. Instrument simulations and experiments were performed relative to the earth's magnetic field to assess the importance of (1) nonpoint-source electron sources, (2) vertical versus horizontal electron beam orientation, and (3) secondary magnetic fields created by the instrument itself. Electron lens focus effects were explored by additional simulations, and were paralleled by experiments performed with a mass spectrometer mounted on a rotating platform. Additionally, magnetically permeable metals were used to shield (1) the entire instrument from the Earth's magnetic field, and (2) the electron beam from both the Earth's and instrument's magnetic fields. Both simulation and experimental results suggest the predominant influence on directionally dependent signal variability is the result of the summation of two magnetic vectors. As such, the most effective method for reducing this effect is the shielding of the electron beam from both magnetic vectors, thus improving electron beam alignment and removing any directional dependency. The improved ionizing electron beam alignment also allows for significant improvements in overall instrument sensitivity.

An algorithm for utilizing peripheral blood CD34 count as a predictor of the need for plerixafor in autologous stem cell mobilization--cost-effectiveness analysis.

PubMed

Abusin, Ghada A; Abu-Arja, Rolla F; Gingrich, Roger D; Silverman, Margarida D; Zamba, Gideon K D; Schlueter, Annette J

2013-08-01

Certain patients who receive granulocyte colony-stimulating factor (GCSF) for autologous hematopoietic stem cell (AHSC) collection fail to mobilize well enough to proceed with transplant. When plerixafor is used with GCSF, the likelihood of achieving the CD34⁺ stem cell target in fewer collections is higher; plerixafor use in all patients is unlikely to be cost-effective. This study retrospectively evaluated the effectiveness of utilizing a peripheral blood CD34⁺ stem cell count (PBCD34) ≤8/µL on day 4 of GCSF-based AHSC mobilization as a threshold for plerixafor administration, and compared the efficacy of collection and cost analysis using historical controls. All patients in the study cohort reached their CD34⁺ targets in ≤3 collections. Significantly more patients who received plerixafor + GCSF versus GCSF alone reached their CD34⁺ target in one collection (P = 0.045); however, there were no significant differences in the number of collections or in cumulative product yields. The historical cohort had 10.3% mobilization failures; the number of collections per patient needed to reach the target was significantly higher in the historical cohort versus study cohort (P = 0.001) as was the number of patients requiring more than one collection to reach their target (P = 0.023). However, the average cost per patient was also significantly higher in the study cohort (P = 0.025). Further refinement of the algorithm may reduce the difference in cost between the two mobilization strategies. Copyright © 2013 Wiley Periodicals, Inc.

Electronic spin transport in gate-tunable black phosphorus spin valves

NASA Astrophysics Data System (ADS)

Liu, Jiawei; Avsar, Ahmet; Tan, Jun You; Oezyilmaz, Barbaros

High charge mobility, the electric field effect and small spin-orbit coupling make semiconducting black phosphorus (BP) a promising material for spintronics device applications requiring long spin distance spin communication with all rectification and amplification actions. Towards this, we study the all electrical spin injection, transport and detection under non-local spin valve geometry in fully encapsulated ultra-thin BP devices. We observe spin relaxation times as high as 4 ns, with spin relaxation lengths exceeding 6 μm. These values are an order of magnitude higher than what have been measured in typical graphene spin valve devices. Moreover, the spin transport depends strongly on charge carrier concentration and can be manipulated in a spin transistor-like manner by controlling electric field. This behaviour persists even at room temperature. Finally, we will show that similar to its electrical and optical properties, spin transport property is also strongly anisotropic.

Method for enhancing the resolving power of ion mobility separations over a limited mobility range

DOEpatents

Shvartsburg, Alexandre A; Tang, Keqi; Smith, Richard D

2014-09-23

A method for raising the resolving power, specificity, and peak capacity of conventional ion mobility spectrometry is disclosed. Ions are separated in a dynamic electric field comprising an oscillatory field wave and opposing static field, or at least two counter propagating waves with different parameters (amplitude, profile, frequency, or speed). As the functional dependencies of mean drift velocity on the ion mobility in a wave and static field or in unequal waves differ, only single species is equilibrated while others drift in either direction and are mobility-separated. An ion mobility spectrum over a limited range is then acquired by measuring ion drift times through a fixed distance inside the gas-filled enclosure. The resolving power in the vicinity of equilibrium mobility substantially exceeds that for known traveling-wave or drift-tube IMS separations, with spectra over wider ranges obtainable by stitching multiple segments. The approach also enables low-cutoff, high-cutoff, and bandpass ion mobility filters.

Getting Geology Students Into the Field

NASA Astrophysics Data System (ADS)

Nocerino, J.

2011-12-01

The importance of field schools to practicing geologists is unquestionable; yet, the opportunities to experience field geology are dwindling. The Geological Society of America (GSA), in cooperation with ExxonMobil, are currently offering three programs to support and encourage field geology. The GSA/ExxonMobil Bighorn Basin Field award is a field seminar in the Bighorn Basin of north-central Wyoming emphasizing multi-disciplinary integrated basin analysis. The GSA/ExxonMobil Field Camp Scholar Award provides undergraduate students 2,000 each to attend the field camp of their choice based on diversity, economic/financial need, and merit. Finally, the GSA/ExxonMobil Field Camp Excellence Award provides one geologic field camp leader an award of 10,000 to assist with their summer field camp season based on safety awareness, diversity, and technical excellence. This non-profit/industry collaboration has proven very successful and in 2011 over 300 geology students and professors have applied for these awards.

Dual control of flow field heterogeneity and immobile porosity on non-Fickian transport in Berea sandstone

NASA Astrophysics Data System (ADS)

Gjetvaj, Filip; Russian, Anna; Gouze, Philippe; Dentz, Marco

2015-10-01

Both flow field heterogeneity and mass transfer between mobile and immobile domains have been studied separately for explaining observed anomalous transport. Here we investigate non-Fickian transport using high-resolution 3-D X-ray microtomographic images of Berea sandstone containing microporous cement with pore size below the setup resolution. Transport is computed for a set of representative elementary volumes and results from advection and diffusion in the resolved macroporosity (mobile domain) and diffusion in the microporous phase (immobile domain) where the effective diffusion coefficient is calculated from the measured local porosity using a phenomenological model that includes a porosity threshold (ϕθ) below which diffusion is null and the exponent n that characterizes tortuosity-porosity power-law relationship. We show that both flow field heterogeneity and microporosity trigger anomalous transport. Breakthrough curve (BTC) tailing is positively correlated to microporosity volume and mobile-immobile interface area. The sensitivity analysis showed that the BTC tailing increases with the value of ϕθ, due to the increase of the diffusion path tortuosity until the volume of the microporosity becomes negligible. Furthermore, increasing the value of n leads to an increase in the standard deviation of the distribution of effective diffusion coefficients, which in turn results in an increase of the BTC tailing. Finally, we propose a continuous time random walk upscaled model where the transition time is the sum of independently distributed random variables characterized by specific distributions. It allows modeling a 1-D equivalent macroscopic transport honoring both the control of the flow field heterogeneity and the multirate mass transfer between mobile and immobile domains.

Comparison of cytotoxic and genotoxic effects of plutonium-239 alpha particles and mobile phone GSM 900 radiation in the Allium cepa test.

PubMed

Pesnya, Dmitry S; Romanovsky, Anton V

2013-01-20

The goal of this study was to compare the cytotoxic and genotoxic effects of plutonium-239 alpha particles and GSM 900 modulated mobile phone (model Sony Ericsson K550i) radiation in the Allium cepa test. Three groups of bulbs were exposed to mobile phone radiation during 0 (sham), 3 and 9h. A positive control group was treated during 20min with plutonium-239 alpha-radiation. Mitotic abnormalities, chromosome aberrations, micronuclei and mitotic index were analyzed. Exposure to alpha-radiation from plutonium-239 and exposure to modulated radiation from mobile phone during 3 and 9h significantly increased the mitotic index. GSM 900 mobile phone radiation as well as alpha-radiation from plutonium-239 induced both clastogenic and aneugenic effects. However, the aneugenic activity of mobile phone radiation was more pronounced. After 9h of exposure to mobile phone radiation, polyploid cells, three-groups metaphases, amitoses and some unspecified abnormalities were detected, which were not registered in the other experimental groups. Importantly, GSM 900 mobile phone radiation increased the mitotic index, the frequency of mitotic and chromosome abnormalities, and the micronucleus frequency in a time-dependent manner. Due to its sensitivity, the A. cepa test can be recommended as a useful cytogenetic assay to assess cytotoxic and genotoxic effects of radiofrequency electromagnetic fields. Copyright © 2012 Elsevier B.V. All rights reserved.

Fast Orthogonal Separation by Superposition of Time of Flight and Field Asymmetric Ion Mobility Spectrometry.

PubMed

Bohnhorst, Alexander; Kirk, Ansgar T; Berger, Marc; Zimmermann, Stefan

2018-01-16

Ion mobility spectrometry is a powerful and low-cost technique for the identification of chemical warfare agents, toxic chemicals, or explosives in air. Drift tube ion mobility spectrometers (DT-IMS) separate ions by the absolute value of their low field ion mobility, while field asymmetric ion mobility spectrometers (FAIMS) separate them by the change of their ion mobility at high fields. However, using one of these devices alone, some common and harmless substances show the same response as the hazardous target substances. In order to increase the selectivity, orthogonal data are required. Thus, in this work, we present for the first time an ambient pressure ion mobility spectrometer which is able to separate ions both by their differential and low field mobility, providing additional information for selectivity enhancement. This novel field asymmetric time of flight ion mobility spectrometer (FAT-IMS) allows high repetition rates and reaches limits of detection in the low ppb range common for DT-IMS. The device consists of a compact 44 mm drift tube with a tritium ionization source and a resolving power of 70. An increased separation of four substances with similar low field ion mobility is shown: phosgene (K 0 = 2.33 cm 2 /(V s)), 1,1,2-trichlorethane (K 0 = 2.31 cm 2 /(V s)), chlorine (K 0 = 2.24 cm 2 /(V s)), and nitrogen dioxide (K 0 = 2.25 cm 2 /(V s)). Furthermore, the behavior and limits of detection for acetonitrile, dimethyl methylphosphonate, diisopropyl methyl phosphonate in positive polarity and carbon dioxide, sulfur dioxide, hydrochloric acid, cyanogen chloride, and hydrogen cyanide in negative polarity are investigated.

[Clinico-statistical study on availability of Esterman disability score for assessment of mobility difficulty in patients with visual field loss].

PubMed

Yamagata, Yoshitaka; Terada, Yuko; Suzuki, Atsushi; Mimura, Osamu

2010-01-01

The visual efficiency scale currently adopted to determine the legal grade of visual disability associated with visual field loss in Japan is not appropriate for the evaluation of disability regarding daily living activities. We investigated whether Esterman disability score (EDS) is suitable for the assessment of mobility difficulty in patients with visual field loss. The correlation between the EDS calculated from Goldmann's kinetic visual field and the degree of subjective mobility difficulty determined by a questionnaire was investigated in 164 patients with visual field loss. The correlation between the EDS determined using a program built into the Humphrey field analyzer and that calculated from Goldmann's kinetic visual field was also investigated. The EDS based on the kinetic visual field was correlated well with the degree of subjective mobility difficulty, and the EDS measured using the Humphrey field analyzer could be estimated from the kinetic visual field-based EDS. Instead of the currently adopted visual efficiency scale, EDS should be employed for the assessment of mobility difficulty in patients with visual field loss, also to establish new judgment criteria concerning the visual field.

Do mobile phones pose a potential risk to autonomic modulation of the heart?

PubMed

Barutcu, Irfan; Esen, Ali Metin; Kaya, Dayimi; Turkmen, Muhsin; Karakaya, Osman; Saglam, Mustafa; Melek, Mehmet; Çelik, Ataç; Kilit, Celal; Onrat, Ersel; Kirma, Cevat

2011-11-01

It has long been speculated that mobile phones may interact with the cardiac devices and thereby cardiovascular system may be a potential target for the electromagnetic fields emitted by the mobile phones. Therefore, the present study was designed to test possible effects of radiofrequency waves emitted by digital mobile phones on cardiac autonomic modulation by short-time heart rate variability (HRV) analysis. A total of 20 healthy young subjects were included to the study. All participants were rested in supine position at least for 15 minutes on a comfortable bed, and then time and frequency domain HRV parameters were recorded at baseline in supine position for 5 minutes. After completion of baseline records, by using a mobile GSM (Global System for Mobile Communication) phone, HRV parameters were recorded at turned off mode, at turned on mode, and at calling mode over 5 minutes periods for each stage. Neither time nor frequency domain HRV parameters altered significantly during off mode compare to their baseline values. Also, neither time nor frequency domain HRV parameters altered significantly during turned on and calling mode compared to their baseline values. Short-time exposure to electromagnetic fields emitted by mobile phone does not affect cardiac autonomic modulation in healthy subjects.

Effects of Electromagnetic Fields on Automated Blood Cell Measurements.

PubMed

Vagdatli, Eleni; Konstandinidou, Vasiliki; Adrianakis, Nikolaos; Tsikopoulos, Ioannis; Tsikopoulos, Alexios; Mitsopoulou, Kyriaki

2014-08-01

The aim of this study is to investigate whether the electromagnetic fields associated with mobile phones and/or laptops interfere with blood cell counts of hematology analyzers. Random blood samples were analyzed on an Aperture Impedance hematology analyzer. The analysis was performed in four ways: (A) without the presence of any mobile phone or portable computer in use, (B) with mobile phones in use (B1: one mobile, B4: four mobiles), (C) with portable computers (laptops) in use (C1: one laptop, C3: three laptops), and (D) with four mobile phones and three laptops in use simultaneously. The results obtained demonstrated a statistically significant decrease in neutrophil, erythrocyte, and platelet count and an increase in lymphocyte count, mean corpuscular volume, and red blood cell distribution width, notably in the B4 group. Despite this statistical significance, in clinical practice, only the red blood cell reduction could be taken into account, as the mean difference between the A and B4 group was 60,000 cells/µL. In group D, the analyzer gave odd results after 11 measurements and finally stopped working. The combined and multiple use of mobile phones and computers affects the function of hematology analyzers, leading to false results. Consequently, the use of such electronic devices must be avoided. © 2014 Society for Laboratory Automation and Screening.

Electrophoresis of fd-virus particles: experiments and an analysis of the effect of finite rod lengths.

PubMed

Buitenhuis, Johan

2012-09-18

The electrophoretic mobility of rodlike fd viruses is measured and compared to theory, with the theoretical calculations performed according to Stigter (Stigter, D. Charged Colloidal Cylinder with a Gouy Double-Layer. J. Colloid Interface Sci. 1975, 53, 296-306. Stigter, D. Electrophoresis of Highly Charged Colloidal Cylinders in Univalent Salt- Solutions. 1. Mobility in Transverse Field. J. Phys. Chem. 1978, 82, 1417-1423. Stigter, D. Electrophoresis of Highly Charged Colloidal Cylinders in Univalent Salt Solutions. 2. Random Orientation in External Field and Application to Polyelectrolytes. J. Phys. Chem. 1978, 82, 1424-1429. Stigter, D. Theory of Conductance of Colloidal Electrolytes in Univalent Salt Solutions. J. Phys. Chem. 1979, 83, 1663-1670), who describes the electrophoretic mobility of infinite cylinders including relaxation effects. Using the dissociation constants of the ionizable groups on the surfaces of the fd viruses, we can calculate the mobility without any adjustable parameter (apart from the possible Stern layer thickness). In addition, the approximation in the theoretical description of Stigter (and others) of using a model of infinitely long cylinders, which consequently is independent of the aspect ratio, is examined by performing more elaborate numerical calculations for finite cylinders. It is shown that, although the electrophoretic mobility of cylindrical particles in the limit of low ionic strength depends on the aspect ratio much more than "end effects", at moderate and high ionic strengths the finite and infinite cylinder models differ only to a degree that can be attributed to end effects. Furthermore, the range of validity of the Stokes regime is systematically calculated.

The Effects of Mobile-Computer-Supported Collaborative Learning: Meta-Analysis and Critical Synthesis.

PubMed

Sung, Yao-Ting; Yang, Je-Ming; Lee, Han-Yueh

2017-08-01

One of the trends in collaborative learning is using mobile devices for supporting the process and products of collaboration, which has been forming the field of mobile-computer-supported collaborative learning (mCSCL). Although mobile devices have become valuable collaborative learning tools, evaluative evidence for their substantial contributions to collaborative learning is still scarce. The present meta-analysis, which included 48 peer-reviewed journal articles and doctoral dissertations written over a 16-year period (2000-2015) involving 5,294 participants, revealed that mCSCL has produced meaningful improvements for collaborative learning, with an overall mean effect size of 0.516. Moderator variables, such as domain subject, group size, teaching method, intervention duration, and reward method were related to different effect sizes. The results provided implications for future research and practice, such as suggestions on how to appropriately use the functionalities of mobile devices, how to best leverage mCSCL through effective group learning mechanisms, and what outcome variables should be included in future studies to fully elucidate the process and products of mCSCL.

The Effects of Mobile-Computer-Supported Collaborative Learning: Meta-Analysis and Critical Synthesis

PubMed Central

Sung, Yao-Ting; Yang, Je-Ming; Lee, Han-Yueh

2017-01-01

One of the trends in collaborative learning is using mobile devices for supporting the process and products of collaboration, which has been forming the field of mobile-computer-supported collaborative learning (mCSCL). Although mobile devices have become valuable collaborative learning tools, evaluative evidence for their substantial contributions to collaborative learning is still scarce. The present meta-analysis, which included 48 peer-reviewed journal articles and doctoral dissertations written over a 16-year period (2000–2015) involving 5,294 participants, revealed that mCSCL has produced meaningful improvements for collaborative learning, with an overall mean effect size of 0.516. Moderator variables, such as domain subject, group size, teaching method, intervention duration, and reward method were related to different effect sizes. The results provided implications for future research and practice, such as suggestions on how to appropriately use the functionalities of mobile devices, how to best leverage mCSCL through effective group learning mechanisms, and what outcome variables should be included in future studies to fully elucidate the process and products of mCSCL. PMID:28989193

Synthesis of large-area multilayer hexagonal boron nitride for high material performance

PubMed Central

Kim, Soo Min; Hsu, Allen; Park, Min Ho; Chae, Sang Hoon; Yun, Seok Joon; Lee, Joo Song; Cho, Dae-Hyun; Fang, Wenjing; Lee, Changgu; Palacios, Tomás; Dresselhaus, Mildred; Kim, Ki Kang; Lee, Young Hee; Kong, Jing

2015-01-01

Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young's modulus: 1.16±0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ∼24,000 cm2 V−1 s−1 at room temperature, higher than that (∼13,000 2 V−1 s−1) with exfoliated h-BN. By placing additional h-BN on a SiO2/Si substrate for a MoS2 (WSe2) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times. PMID:26507400

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawamura, Yumi; Hattori, Nozomu; Miyatake, Naomasa

Zinc oxide (ZnO) thin films have attracted significant attention for application in thin film transistors (TFTs) due to their specific characteristics, such as high mobility and transparency. In this paper, the authors fabricated TFTs with ZnO thin films as channel layers deposited by plasma-assisted atomic layer deposition (PAALD) at 100 Degree-Sign C using two different plasma sources, water (H{sub 2}O-plasma) and oxygen gas (O{sub 2}-plasma), as oxidants, and investigated the effects of the plasma sources on TFT performances. The TFT with ZnO channel layer deposited with H{sub 2}O-plasma indicated higher performances such as a field effect mobility ({mu}) of 1.1more » cm{sup 2}/Vs. Analysis of the ZnO films revealed that the residual carbon in the film deposited with H{sub 2}O-plasma was lower than that of O{sub 2}-plasma. In addition, the c-axis preferred orientation was obtained in the case of the ZnO film deposited with H{sub 2}O-plasma. These results suggest that it is possible to fabricate high-performance ZnO TFTs at low temperatures by PAALD with H{sub 2}O-plasma.« less

Scatterings and Quantum Effects in (Al ,In )N /GaN Heterostructures for High-Power and High-Frequency Electronics

NASA Astrophysics Data System (ADS)

Wang, Leizhi; Yin, Ming; Khan, Asif; Muhtadi, Sakib; Asif, Fatima; Choi, Eun Sang; Datta, Timir

2018-02-01

Charge transport in the wide-band-gap (Al ,In )N /GaN heterostructures with high carrier density approximately 2 ×1013 cm-2 is investigated over a large range of temperature (270 mK ≤T ≤280 K ) and magnetic field (0 ≤B ≤18 T ). We observe the first evidence of weak localization in the two-dimensional electron gas in this system. From the Shubnikov-de Haas (SdH) oscillations a relatively light effective mass of 0.23 me is determined. Furthermore, the linear dependence with temperature (T <20 K ) of the inelastic scattering rate (τi-1∝T ) is attributed to the phase breaking by electron-electron scattering. Also in the same temperature range the less-than unit ratio of quantum lifetime to Hall transport time (τq/τt<1 ) is taken to signify the dominance of small-angle scattering. Above 20 K, with increasing temperature scattering changes from acoustic phonon to optical phonon scattering, resulting in a rapid decrease in carrier mobility and increase in sheet resistance. Suppression of such scatterings will lead to higher mobility and a way forward to high-power and high-frequency electronics.

Does short-term exposure to mobile phone base station signals increase symptoms in individuals who report sensitivity to electromagnetic fields? A double-blind randomized provocation study.

PubMed

Eltiti, Stacy; Wallace, Denise; Ridgewell, Anna; Zougkou, Konstantina; Russo, Riccardo; Sepulveda, Francisco; Mirshekar-Syahkal, Dariush; Rasor, Paul; Deeble, Roger; Fox, Elaine

2007-11-01

Individuals with idiopathic environmental illness with attribution to electromagnetic fields (IEI-EMF) believe they suffer negative health effects when exposed to electromagnetic fields from everyday objects such as mobile phone base stations. This study used both open provocation and double-blind tests to determine if sensitive and control individuals experience more negative health effects when exposed to base station-like signals compared with sham. Fifty-six self-reported sensitive and 120 control participants were tested in an open provocation test. Of these, 12 sensitive and 6 controls withdrew after the first session. The remainder completed a series of double-blind tests. Subjective measures of well-being and symptoms as well as physiological measures of blood volume pulse, heart rate, and skin conductance were obtained. During the open provocation, sensitive individuals reported lower levels of well-being in both the global system for mobile communication (GSM) and universal mobile telecommunications system (UMTS) compared with sham exposure, whereas controls reported more symptoms during the UMTS exposure. During double-blind tests the GSM signal did not have any effect on either group. Sensitive participants did report elevated levels of arousal during the UMTS condition, whereas the number or severity of symptoms experienced did not increase. Physiological measures did not differ across the three exposure conditions for either group. Short-term exposure to a typical GSM base station-like signal did not affect well-being or physiological functions in sensitive or control individuals. Sensitive individuals reported elevated levels of arousal when exposed to a UMTS signal. Further analysis, however, indicated that this difference was likely to be due to the effect of order of exposure rather than the exposure itself.

Does Short-Term Exposure to Mobile Phone Base Station Signals Increase Symptoms in Individuals Who Report Sensitivity to Electromagnetic Fields? A Double-Blind Randomized Provocation Study

PubMed Central

Eltiti, Stacy; Wallace, Denise; Ridgewell, Anna; Zougkou, Konstantina; Russo, Riccardo; Sepulveda, Francisco; Mirshekar-Syahkal, Dariush; Rasor, Paul; Deeble, Roger; Fox, Elaine

2007-01-01

Background Individuals with idiopathic environmental illness with attribution to electromagnetic fields (IEI-EMF) believe they suffer negative health effects when exposed to electromagnetic fields from everyday objects such as mobile phone base stations. Objectives This study used both open provocation and double-blind tests to determine if sensitive and control individuals experience more negative health effects when exposed to base station-like signals compared with sham. Methods Fifty-six self-reported sensitive and 120 control participants were tested in an open provocation test. Of these, 12 sensitive and 6 controls withdrew after the first session. The remainder completed a series of double-blind tests. Subjective measures of well-being and symptoms as well as physiological measures of blood volume pulse, heart rate, and skin conductance were obtained. Results During the open provocation, sensitive individuals reported lower levels of well-being in both the global system for mobile communication (GSM) and universal mobile telecommunications system (UMTS) compared with sham exposure, whereas controls reported more symptoms during the UMTS exposure. During double-blind tests the GSM signal did not have any effect on either group. Sensitive participants did report elevated levels of arousal during the UMTS condition, whereas the number or severity of symptoms experienced did not increase. Physiological measures did not differ across the three exposure conditions for either group. Conclusions Short-term exposure to a typical GSM base station-like signal did not affect well-being or physiological functions in sensitive or control individuals. Sensitive individuals reported elevated levels of arousal when exposed to a UMTS signal. Further analysis, however, indicated that this difference was likely to be due to the effect of order of exposure rather than the exposure itself. PMID:18007992

Mobile phones improve case detection and management of malaria in rural Bangladesh

PubMed Central

2013-01-01

Background The recent introduction of mobile phones into the rural Bandarban district of Bangladesh provided a resource to improve case detection and treatment of patients with malaria. Methods During studies to define the epidemiology of malaria in villages in south-eastern Bangladesh, an area with hypoendemic malaria, the project recorded 986 mobile phone calls from families because of illness suspected to be malaria between June 2010 and June 2012. Results Based on phone calls, field workers visited the homes with ill persons, and collected blood samples for malaria on 1,046 people. 265 (25%) of the patients tested were positive for malaria. Of the 509 symptomatic malaria cases diagnosed during this study period, 265 (52%) were detected because of an initial mobile phone call. Conclusion Mobile phone technology was found to be an efficient and effective method for rapidly detecting and treating patients with malaria in this remote area. This technology, when combined with local knowledge and field support, may be applicable to other hard-to-reach areas to improve malaria control. PMID:23374585

Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors

PubMed Central

Ahn, Cheol Hyoun; Senthil, Karuppanan; Cho, Hyung Koun; Lee, Sang Yeol

2013-01-01

High-performance thin-film transistors (TFTs) are the fundamental building blocks in realizing the potential applications of the next-generation displays. Atomically controlled superlattice structures are expected to induce advanced electric and optical performance due to two-dimensional electron gas system, resulting in high-electron mobility transistors. Here, we have utilized a semiconductor/insulator superlattice channel structure comprising of ZnO/Al2O3 layers to realize high-performance TFTs. The TFT with ZnO (5 nm)/Al2O3 (3.6 nm) superlattice channel structure exhibited high field effect mobility of 27.8 cm2/Vs, and threshold voltage shift of only < 0.5 V under positive/negative gate bias stress test during 2 hours. These properties showed extremely improved TFT performance, compared to ZnO TFTs. The enhanced field effect mobility and stability obtained for the superlattice TFT devices were explained on the basis of layer-by-layer growth mode, improved crystalline nature of the channel layers, and passivation effect of Al2O3 layers. PMID:24061388

Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spencer, B. F., E-mail: Ben.Spencer@manchester.ac.uk; Smith, W. F.; Hibberd, M. T.

2016-05-23

The effective mass, sheet carrier concentration, and mobility of electrons within a two-dimensional electron gas in an AlGaN/GaN heterostructure were determined using a laboratory-based terahertz cyclotron resonance spectrometer. The ability to perform terahertz cyclotron resonance spectroscopy with magnetic fields of up to 31 T was enabled by combining a high-field pulsed magnet with a modified asynchronous optical sampling terahertz detection scheme. This scheme allowed around 100 transmitted terahertz waveforms to be recorded over the 14 ms magnetic field pulse duration. The sheet density and mobility were measured to be 8.0 × 10{sup 12 }cm{sup −2} and 9000 cm{sup 2} V{sup −1} s{sup −1} at 77 K. The in-planemore » electron effective mass at the band edge was determined to be 0.228 ± 0.002m{sub 0}.« less

Ion mobility sensor system

DOEpatents

Xu, Jun; Watson, David B.; Whitten, William B.

2013-01-22

An ion mobility sensor system including an ion mobility spectrometer and a differential mobility spectrometer coupled to the ion mobility spectrometer. The ion mobility spectrometer has a first chamber having first end and a second end extending along a first direction, and a first electrode system that generates a constant electric field parallel to the first direction. The differential mobility spectrometer includes a second chamber having a third end and a fourth end configured such that a fluid may flow in a second direction from the third end to the fourth end, and a second electrode system that generates an asymmetric electric field within an interior of the second chamber. Additionally, the ion mobility spectrometer and the differential mobility spectrometer form an interface region. Also, the first end and the third end are positioned facing one another so that the constant electric field enters the third end and overlaps the fluid flowing in the second direction.

Charge transport properties of carbazole dendrimers in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Mutkins, Karyn; Chen, Simon S. Y.; Aljada, Muhsen; Powell, Ben J.; Olsen, Seth; Burn, Paul L.; Meredith, Paul

2011-10-01

We report three generations of p-type dendrimer semiconductors comprised of spirobifluorene cores, carbazole branching units and fluorene surface groups for use in organic field-effect transistors (OFETs). The group of dendrimers are defined by their generation and noted as SBF-(Gx)2, where x is the generation. Top contact-bottom gate OFETs were fabricated by spin-coating the dendrimers onto an n-octyltrichlorosilane (OTS) passivated silicon dioxide surface. The dendrimer films were found to be amorphous. The highest mobility was measured for the first generation dendrimer (SBF-(G1)2), which had an average mobility of (6.6 +/- 0.2) × 10-5 cm2/V s and an ON/OFF ratio of 3.0 × 104. As the generation of the dendrimer was increased there was only a slight decrease in the measured mobility in spite of the significantly different molecular sizes of the dendrimers. The mobility of SBF-(G3)2, which had a hydrodynamic radius almost twice of SBF-(G1)2, still had an average mobility of (4.7 +/- 0.6) × 10-5 cm2/V s and an ON/OFF ratio of 2.7 × 103. Density functional theory calculations showed that the highest occupied molecular orbital was distributed over the core and carbazole units meaning that both intra- and intermolecular charge transfer could occur enabling the hole mobility to remain essentially constant even though the dendrimers would pack differently in the solid-state.

Cumulative effects of electrode and dielectric surface modifications on pentacene-based transistors

NASA Astrophysics Data System (ADS)

Devynck, Mélanie; Tardy, Pascal; Wantz, Guillaume; Nicolas, Yohann; Vellutini, Luc; Labrugère, Christine; Hirsch, Lionel

2012-01-01

Surface modifications of the dielectric and the metal of pentacene-based field effect transistors using self-assembled monolayer (SAM) were studied. First, a low interfacial trap density and pentacene 2D-growth were favored by the nonpolar and low surface energy of octadecyltrichlorosilane-based SAM. This treatment leaded to increased mobility up to 0.4 cm2 V-1 s-1 and no observable hysteresis on transfer curves. Second, reduced hole injection barrier and contact resistance were achieved by fluorinated thiols deposited on gold contacts resulting in an increased mobility up to 0.6 cm2 V-1 s-1. Finally, a high mobility of 2.6 cm2 V-1 s-1 was achieved by cumulative effects of both treatments.

Hall effect mobility for SiC MOSFETs with increasing dose of nitrogen implantation into channel region

NASA Astrophysics Data System (ADS)

Noguchi, Munetaka; Iwamatsu, Toshiaki; Amishiro, Hiroyuki; Watanabe, Hiroshi; Kita, Koji; Yamakawa, Satoshi

2018-04-01

The Hall effect mobility (μHall) of the Si-face 4H-SiC metal–oxide–semiconductor field effect transistor (MOSFET) with a nitrogen (N)-implanted channel region was investigated by increasing the N dose. The μHall in the channel region was systematically examined regarding channel structures, that is, the surface and buried channels. It was experimentally demonstrated that increasing the N dose results in an improvement in μHall in the channel region due to the formation of the buried channel. However, further increase in N dose was found to decrease the μHall in the channel region, owing to the decrease in the electron mobility in the N-implanted bulk region.