High Voltage Design Concepts for Launch Vehicles and Orbital Spacecraft Applications

NASA Technical Reports Server (NTRS)

Hall, David K.; Kirkici, Hulya; Hillard, G. Barry; Schweickart, Daniel; Dunbar, Bill

2000-01-01

With the advent of design concepts such as, electromechanical actuation and "more electric" initiatives, has come the need for electrical power buses and electronic equipment to operate at higher than normal dc voltages to meet power requirements while keeping current levels to manageable levels. This new bus voltage has been typically 270 Volts dc nominal for launch vehicles, and 120 Volt dc for the International Space Station. This paper will discuss the new design applications for high voltage dc power in existing and future launch vehicles and spacecraft and the potential problems associated therewith. These new applications must be operational from lift-off, ascent, on orbit and descent in all of the pressure and temperature conditions for each, i.e. through the "Paschen region" twice. This paper will also attempt to stimulate an interest in the academic and professional communities to support and conduct research needed for design data applicable to high voltage dc usage.

78 FR 48769 - Mercedes-Benz USA, LLC and Daimler AG, Receipt of Petition for Decision of Inconsequential...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-08-09

... subject vehicles contain parking lamps that exceed the maximum designated candlepower output level... for parking lamps). Due to a programming issue in the electronic control unit, the voltage in the parking lamp circuit is 12.8 volts which is higher than the design voltage specification of 7 volts in the...

Does Stepwise Voltage Ramping Protect the Kidney from Injury During Extracorporeal Shockwave Lithotripsy? Results of a Prospective Randomized Trial.

PubMed

Skuginna, Veronika; Nguyen, Daniel P; Seiler, Roland; Kiss, Bernhard; Thalmann, George N; Roth, Beat

2016-02-01

Renal damage is more frequent with new-generation lithotripters. However, animal studies suggest that voltage ramping minimizes the risk of complications following extracorporeal shock wave lithotripsy (SWL). In the clinical setting, the optimal voltage strategy remains unclear. To evaluate whether stepwise voltage ramping can protect the kidney from damage during SWL. A total of 418 patients with solitary or multiple unilateral kidney stones were randomized to receive SWL using a Modulith SLX-F2 lithotripter with either stepwise voltage ramping (n=213) or a fixed maximal voltage (n=205). SWL. The primary outcome was sonographic evidence of renal hematomas. Secondary outcomes included levels of urinary markers of renal damage, stone disintegration, stone-free rate, and rates of secondary interventions within 3 mo of SWL. Descriptive statistics were used to compare clinical outcomes between the two groups. A logistic regression model was generated to assess predictors of hematomas. Significantly fewer hematomas occurred in the ramping group(12/213, 5.6%) than in the fixed group (27/205, 13%; p=0.008). There was some evidence that the fixed group had higher urinary β2-microglobulin levels after SWL compared to the ramping group (p=0.06). Urinary microalbumin levels, stone disintegration, stone-free rate, and rates of secondary interventions did not significantly differ between the groups. The logistic regression model showed a significantly higher risk of renal hematomas in older patients (odds ratio [OR] 1.03, 95% confidence interval [CI] 1.00-1.05; p=0.04). Stepwise voltage ramping was associated with a lower risk of hematomas (OR 0.39, 95% CI 0.19-0.80; p=0.01). The study was limited by the use of ultrasound to detect hematomas. In this prospective randomized study, stepwise voltage ramping during SWL was associated with a lower risk of renal damage compared to a fixed maximal voltage without compromising treatment effectiveness. Lithotripsy is a noninvasive technique for urinary stone disintegration using ultrasonic energy. In this study, two voltage strategies are compared. The results show that a progressive increase in voltage during lithotripsy decreases the risk of renal hematomas while maintaining excellent outcomes. ISRCTN95762080. Copyright © 2015 European Association of Urology. Published by Elsevier B.V. All rights reserved.

Errors due to measuring voltage on current-carrying electrodes in electric current computed tomography.

PubMed

Cheng, K S; Simske, S J; Isaacson, D; Newell, J C; Gisser, D G

1990-01-01

Electric current computed tomography is a process for determining the distribution of electrical conductivity inside a body based upon measurements of voltage or current made at the body's surface. Most such systems use different electrodes for the application of current and the measurement of voltage. This paper shows that when a multiplicity of electrodes are attached to a body's surface, the voltage data are most sensitive to changes in resistivity in the body's interior when voltages are measured from all electrodes, including those carrying current. This assertion is true despite the presence of significant levels of skin impedance at the electrodes. This conclusion is supported both theoretically and by experiment. Data were first taken using all electrodes for current and voltage. Then current was applied only at a pair of electrodes, with voltages measured on all other electrodes. We then constructed the second data set by calculation from the first. Targets could be detected with better signal-to-noise ratio by using the reconstructed data than by using the directly measured voltages on noncurrent-carrying electrodes. Images made from voltage data using only noncurrent-carrying electrodes had higher noise levels and were less able to accurately locate targets. We conclude that in multiple electrode systems for electric current computed tomography, current should be applied and voltage should be measured from all available electrodes.

Investigation of Defect Distributions in SiO2/AlGaN/GaN High-Electron-Mobility Transistors by Using Capacitance-Voltage Measurement with Resonant Optical Excitation

NASA Astrophysics Data System (ADS)

Kim, Tae-Soo; Lim, Seung-Young; Park, Yong-Keun; Jung, Gunwoo; Song, Jung-Hoon; Cha, Ho-Young; Han, Sang-Woo

2018-06-01

We investigated the distributions and the energy levels of defects in SiO2/AlGaN/GaN highelectron-mobility transistors (HEMTs) by using frequency-dependent ( F- D) capacitance-voltage ( C- V) measurements with resonant optical excitation. A Schottky barrier (SB) and a metal-oxidesemiconductor (MOS) HEMT were prepared to compare the effects of defects in their respective layers. We also investigated the effects of those layers on the threshold voltage ( V th ). A drastic voltage shift in the C- V curve at higher frequencies was caused by the large number of defect levels in the SiO2/GaN interface. A significant shift in V th with additional light illumination was observed due to a charging of the defect states in the SiO2/GaN interface. The voltage shifts were attributed to the detrapping of defect states at the SiO2/GaN interface.

Effect of a longitudinally applied voltage upon the growth of Zea mays seedlings

NASA Technical Reports Server (NTRS)

Desrosiers, M. F.; Bandurski, R. S.

1988-01-01

The electrical parameters that affect young seedling growth were investigated. Voltages ranging from 5 to 40 volts were applied longitudinally along the mesocotyl region of 4-day old Zea mays L. (cv Silver Queen) seedlings for periods of 3 or 4 hours. It was determined that: (a) making the tips of the seedlings electrically positive relative to the base strongly inhibited shoot growth at 5 volts, whereas the reverse polarity had no effect; (b) at higher voltages, making the tip of the seedlings negative caused less growth inhibition than the reverse polarity at each voltage level; (c) the higher the applied voltage the greater the degree of inhibition; and, (d) the more growth inhibition experienced by the plants the poorer, and slower, their recovery. Previous observations of a relationship between the amount of free indole-3-acetic acid in the mesocotyl cortex and the growth rate of the mesocotyl and of gravitropism-induced movement of labeled indole-3-acetic acid from the seed to the shoot lead to the prediction of a voltage-dependent gating of the movement of indole-3-acetic acid from the stele to the cortex. This provided the basis for attempting to alter the growth rate of seedlings by means of an applied voltage.

Effect of a longitudinally applied voltage upon the growth of Zea mays seedlings.

PubMed

Desrosiers, M F; Bandurski, R S

1988-01-01

The electrical parameters that affect young seedling growth were investigated. Voltages ranging from 5 to 40 volts were applied longitudinally along the mesocotyl region of 4-day old Zea mays L. (cv Silver Queen) seedlings for periods of 3 or 4 hours. It was determined that: (a) making the tips of the seedlings electrically positive relative to the base strongly inhibited shoot growth at 5 volts, whereas the reverse polarity had no effect; (b) at higher voltages, making the tip of the seedlings negative caused less growth inhibition than the reverse polarity at each voltage level; (c) the higher the applied voltage the greater the degree of inhibition; and, (d) the more growth inhibition experienced by the plants the poorer, and slower, their recovery. Previous observations of a relationship between the amount of free indole-3-acetic acid in the mesocotyl cortex and the growth rate of the mesocotyl and of gravitropism-induced movement of labeled indole-3-acetic acid from the seed to the shoot lead to the prediction of a voltage-dependent gating of the movement of indole-3-acetic acid from the stele to the cortex. This provided the basis for attempting to alter the growth rate of seedlings by means of an applied voltage.

Effect of a Longitudinally Applied Voltage Upon the Growth of Zea mays Seedlings 1

PubMed Central

Desrosiers, Mark F.; Bandurski, Robert S.

1988-01-01

The electrical parameters that affect young seedling growth were investigated. Voltages ranging from 5 to 40 volts were applied longitudinally along the mesocotyl region of 4-day old Zea mays L. (cv Silver Queen) seedlings for periods of 3 or 4 hours. It was determined that: (a) making the tips of the seedlings electrically positive relative to the base strongly inhibited shoot growth at 5 volts, whereas the reverse polarity had no effect; (b) at higher voltages, making the tip of the seedlings negative caused less growth inhibition than the reverse polarity at each voltage level; (c) the higher the applied voltage the greater the degree of inhibition; and, (d) the more growth inhibition experienced by the plants the poorer, and slower, their recovery. Previous observations of a relationship between the amount of free indole-3-acetic acid in the mesocotyl cortex and the growth rate of the mesocotyl and of gravitropism-induced movement of labeled indole-3-acetic acid from the seed to the shoot lead to the prediction of a voltage-dependent gating of the movement of indole-3-acetic acid from the stele to the cortex. This provided the basis for attempting to alter the growth rate of seedlings by means of an applied voltage. Images Fig. 1 PMID:11537877

Spectral shape deformation in inverse spin Hall voltage in Y{sub 3}Fe{sub 5}O{sub 12}|Pt bilayers at high microwave power levels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lustikova, J., E-mail: lustikova@imr.tohoku.ac.jp; Shiomi, Y.; Handa, Y.

2015-02-21

We report on the deformation of microwave absorption spectra and of the inverse spin Hall voltage signals in thin film bilayers of yttrium iron garnet (YIG) and platinum at high microwave power levels in a 9.45-GHz TE{sub 011} cavity. As the microwave power increases from 0.15 to 200 mW, the resonance field shifts to higher values, and the initially Lorentzian spectra of the microwave absorption intensity as well as the inverse spin Hall voltage signals become asymmetric. The contributions from opening of the magnetization precession cone and heating of YIG cannot well reproduce the data. Control measurements of inverse spinmore » Hall voltages on thin-film YIG|Pt systems with a range of line widths underscore the role of spin-wave excitations in spectral deformation.« less

Electrostatic separation for recycling silver, silicon and polyethylene terephthalate from waste photovoltaic cells

NASA Astrophysics Data System (ADS)

Zhang, Zisheng; Sun, Bo; Yang, Jie; Wei, Yusheng; He, Shoujie

2017-04-01

Electrostatic separation technology has been proven to be an effective and environmentally friendly way of recycling electronic waste. In this study, this technology was applied to recycle waste solar panels. Mixed particles of silver and polyethylene terephthalate, silicon and polyethylene terephthalate, and silver and silicon were separated with a single-roll-type electrostatic separator. The influence of high voltage level, roll speed, radial position corona electrode and angular position of the corona electrode on the separation efficiency was studied. The experimental data showed that separation of silver/polyethylene terephthalate and silicon/polyethylene terephthalate needed a higher voltage level, while separation of silver and silicon needed a smaller angular position for the corona electrode and a higher roll speed. The change of the high voltage level, roll speed, radial position of the corona electrode, and angular position of the corona electrode has more influence on silicon separation efficiency than silver separation efficiency. An integrated process is proposed using a two-roll-type corona separator for multistage separation of a mixture of these three materials. The separation efficiency for silver and silicon were found to reach 96% and 98%, respectively.

Quadrupole mass spectrometer driver with higher signal levels

NASA Technical Reports Server (NTRS)

Chutjian, Ara (Inventor); Aalami, Dean (Inventor); Darrach, Murray (Inventor); Orient, Otto (Inventor)

2003-01-01

Driving a quadrapole mass spectrometer includes obtaining an air core transformer with a primary and a secondary, matching the secondary to the mass spectrometer, and driving the primary based on first and second voltage levels. Driving of the primary is via an isolating stage that minimizes low level drive signal coupling.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tewari, Somesh Vinayak, E-mail: somesh-vinayak@yahoo.com, E-mail: svtewari@barc.gov.in; Sharma, Archana; Mittal, K. C.

An experimental investigation of surface flashover characteristics of PMMA and POM is studied in compressed nitrogen gas environment with nitrogen as the background gas. The operating pressure range is from 1kg/cm{sup 2} to 4kg/cm{sup 2}. It is observed that the breakdown voltage of PMMA is higher than POM owing to a higher permittivity mismatch between POM- nitrogen interface as compared to the PMMA- nitrogen interface. The reduction in spacer efficiency with pressure for PMMA is 11% as compared to POM which shows a higher reduction of 18%. This paper further emphasizes on the role of energy level and density ofmore » charge carrier trapping centers for a reduced breakdown voltage in POM as compared to PMMA.« less

Experimental breakdown of selected anodized aluminum samples in dilute plasmas

NASA Technical Reports Server (NTRS)

Grier, Norman T.; Domitz, Stanley

1992-01-01

Anodized aluminum samples representative of Space Station Freedom structural material were tested for electrical breakdown under space plasma conditions. In space, this potential arises across the insulating anodized coating when the spacecraft structure is driven to a negative bias relative to the external plasma potential due to plasma-surface interaction phenomena. For anodized materials used in the tests, it was found that breakdown voltage varied from 100 to 2000 volts depending on the sample. The current in the arcs depended on the sample, the capacitor, and the voltage. The level of the arc currents varied from 60 to 1000 amperes. The plasma number density varied from 3 x 10 exp 6 to 10 exp 3 ions per cc. The time between arcs increased as the number density was lowered. Corona testing of anodized samples revealed that samples with higher corona inception voltage had higher arcing inception voltages. From this it is concluded that corona testing may provide a method of screening the samples.

SABRE modification to a higher voltage high impedance inductive voltage adder (IVA)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mazarakis, M.G.; Smith, D.L.; Poukey, J.W.

The SABRE accelerator was originally designed to operate as low impedance voltage adder with 40-ohm maximum output impedance in negative polarity operation and approximately 20 ohm in positive polarity. Because of the low impedance and higher than expected energy losses in the pulse forming network, the operating input cavity voltage is of the order of 800 kV which limits the total output voltage to {approximately} 8 MV for negative polarity and 5 to 6 MV for positive polarity. The modifications presented here aim to increase the output voltage in both polarities. A new high impedance central electrode was designed capablemore » of operating both in negative and positive polarities, and the number of pulse forming lines feeding the inductively isolated cavities was reduced to half. These modifications were recently tested in positive polarity. An increase in the total accelerating voltage from 5.5 MV to 9 MV was observed while stressing all components to the level required to achieve 12 MV in negative polarity. In these experiments only 65% of the usual operating intermediate store capacitor voltage was necessary (1.7 MV instead of 2.6 MV). Currently, the device is reconfigured for negative polarity tests. The cavities are rotated by 180{degree} and a 17-inch spool is added at the base of the cantilevered center electrode (cathode electrode). Positive and negative polarity results are presented and compared with simulations.« less

Charge-pump voltage converter

DOEpatents

Brainard, John P [Albuquerque, NM; Christenson, Todd R [Albuquerque, NM

2009-11-03

A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

A Noise Level Prediction Method Based on Electro-Mechanical Frequency Response Function for Capacitors

PubMed Central

Zhu, Lingyu; Ji, Shengchang; Shen, Qi; Liu, Yuan; Li, Jinyu; Liu, Hao

2013-01-01

The capacitors in high-voltage direct-current (HVDC) converter stations radiate a lot of audible noise which can reach higher than 100 dB. The existing noise level prediction methods are not satisfying enough. In this paper, a new noise level prediction method is proposed based on a frequency response function considering both electrical and mechanical characteristics of capacitors. The electro-mechanical frequency response function (EMFRF) is defined as the frequency domain quotient of the vibration response and the squared capacitor voltage, and it is obtained from impulse current experiment. Under given excitations, the vibration response of the capacitor tank is the product of EMFRF and the square of the given capacitor voltage in frequency domain, and the radiated audible noise is calculated by structure acoustic coupling formulas. The noise level under the same excitations is also measured in laboratory, and the results are compared with the prediction. The comparison proves that the noise prediction method is effective. PMID:24349105

A noise level prediction method based on electro-mechanical frequency response function for capacitors.

PubMed

Zhu, Lingyu; Ji, Shengchang; Shen, Qi; Liu, Yuan; Li, Jinyu; Liu, Hao

2013-01-01

The capacitors in high-voltage direct-current (HVDC) converter stations radiate a lot of audible noise which can reach higher than 100 dB. The existing noise level prediction methods are not satisfying enough. In this paper, a new noise level prediction method is proposed based on a frequency response function considering both electrical and mechanical characteristics of capacitors. The electro-mechanical frequency response function (EMFRF) is defined as the frequency domain quotient of the vibration response and the squared capacitor voltage, and it is obtained from impulse current experiment. Under given excitations, the vibration response of the capacitor tank is the product of EMFRF and the square of the given capacitor voltage in frequency domain, and the radiated audible noise is calculated by structure acoustic coupling formulas. The noise level under the same excitations is also measured in laboratory, and the results are compared with the prediction. The comparison proves that the noise prediction method is effective.

Single-Cell Electric Lysis on an Electroosmotic-Driven Microfluidic Chip with Arrays of Microwells

PubMed Central

Jen, Chun-Ping; Amstislavskaya, Tamara G.; Liu, Ya-Hui; Hsiao, Ju-Hsiu; Chen, Yu-Hung

2012-01-01

Accurate analysis at the single-cell level has become a highly attractive tool for investigating cellular content. An electroosmotic-driven microfluidic chip with arrays of 30-μm-diameter microwells was developed for single-cell electric lysis in the present study. The cellular occupancy in the microwells when the applied voltage was 5 V (82.4%) was slightly higher than that at an applied voltage of 10 V (81.8%). When the applied voltage was increased to 15 V, the cellular occupancy in the microwells dropped to 64.3%. More than 50% of the occupied microwells contain individual cells. The results of electric lysis experiments at the single-cell level indicate that the cells were gradually lysed as the DC voltage of 30 V was applied; the cell was fully lysed after 25 s. Single-cell electric lysis was demonstrated in the proposed microfluidic chip, which is suitable for high-throughput cell lysis. PMID:22969331

The characteristics of electrical trees in the inner and outer layers of different voltage rating XLPE cable insulation

NASA Astrophysics Data System (ADS)

Xie, Ansheng; Li, Shengtao; Zheng, Xiaoquan; Chen, George

2009-06-01

The statistical initiation and propagation characteristics of electrical trees in cross-linked polyethylene (XLPE) cables with different voltage ratings from 66 to 500 kV were investigated under a constant test voltage of 50 Hz/7 kV (the 66 kV rating cable is from UK, the others from China). It was found that the characteristics of electrical trees in the inner region of 66 kV cable insulation differed considerably from those in the outer region under the same test conditions; however, no significant differences appeared in the 110 kV rating cable and above. The initiation time of electrical trees in both the inner and the outer regions of the 66 kV cable is much shorter than that in higher voltage rating cables; in addition the growth rate of electrical trees in the 66 kV cable is much larger than that in the higher voltage rating cables. By using x-ray diffraction, differential scanning calorimetry and thermogravimetry methods, it was revealed that besides the extrusion process, the molecular weight of base polymer material and its distribution are the prime factors deciding the crystallization state. The crystallization state and the impurity content are responsible for the resistance to electrical trees. Furthermore, it was proposed that big spherulites will cooperate with high impurity content in enhancing the initiation and growth processes of electrical trees via the 'synergetic effect'. Finally, dense and small spherulites, high crystallinity, high purity level of base polymer material and super-clean production processes are desirable for higher voltage rating cables.

Avionics electromagnetic interference immunity and environment

NASA Technical Reports Server (NTRS)

Clarke, C. A.

1986-01-01

Aircraft electromagnetic spectrum and radio frequency (RF) field strengths are charted, profiling the higher levels of electromagnetic voltages encountered by the commercial aircraft wiring. Selected military, urban, and rural electromagnetic field levels are plotted and provide a comparison of radiation amplitudes. Low frequency magnetic fields and electric fields from 400 H(Z) power systems are charted versus frequency and wire separation to indicate induced voltages on adjacent or neighboring circuits. Induced EMI levels and attenuation characteristics of electric, magnetic, RF fields, and transients are plotted and graphed for common types of wire circuits. The significance of wire circuit returns and shielding is emphasized to highlight the techniques that help block the paths of electromagnetic interference and maintain avionic interface signal quality.

Battery Cell By-Pass Circuit

NASA Technical Reports Server (NTRS)

Mumaw, Susan J. (Inventor); Evers, Jeffrey (Inventor); Craig, Calvin L., Jr. (Inventor); Walker, Stuart D. (Inventor)

2001-01-01

The invention is a circuit and method of limiting the charging current voltage from a power supply net work applied to an individual cell of a plurality of cells making up a battery being charged in series. It is particularly designed for use with batteries that can be damaged by overcharging, such as Lithium-ion type batteries. In detail. the method includes the following steps: 1) sensing the actual voltage level of the individual cell; 2) comparing the actual voltage level of the individual cell with a reference value and providing an error signal representative thereof; and 3) by-passing the charging current around individual cell necessary to keep the individual cell voltage level generally equal a specific voltage level while continuing to charge the remaining cells. Preferably this is accomplished by by-passing the charging current around the individual cell if said actual voltage level is above the specific voltage level and allowing the charging current to the individual cell if the actual voltage level is equal or less than the specific voltage level. In the step of bypassing the charging current, the by-passed current is transferred at a proper voltage level to the power supply. The by-pass circuit a voltage comparison circuit is used to compare the actual voltage level of the individual cell with a reference value and to provide an error signal representative thereof. A third circuit, designed to be responsive to the error signal, is provided for maintaining the individual cell voltage level generally equal to the specific voltage level. Circuitry is provided in the third circuit for bypassing charging current around the individual cell if the actual voltage level is above the specific voltage level and transfers the excess charging current to the power supply net work. The circuitry also allows charging of the individual cell if the actual voltage level is equal or less than the specific voltage level.

Stray voltage and milk quality: a review.

PubMed

Reinemann, Douglas J

2012-07-01

If animal contact voltage reaches sufficient levels, animals coming into contact with grounded devices may receive a mild electric shock that can cause a behavioral response. At voltage levels that are just perceptible to the animal, behaviors indicative of perception (eg, flinches) may result with little change in normal routines. At higher exposure levels, avoidance behaviors may result. The direct effect of animal contact with electrical current can range from: • Mild behavioral reactions indicative of sensation, to • Involuntary muscle contraction, or twitching, to • Intense behavioral responses indicative of pain. The indirect effects of these behaviors can vary considerably depending on the specifics of the contact location, level of current flow, body pathway, frequency of occurrence, and many other factors related to the daily activities of animals. There are several common situations of concern in animal environments: • Animals avoiding certain exposure locations, which may result in: X Reduced water intake if exposure is required for animals to access watering devices, X Reduced feed intake if exposure is required for animals to accesses feeding devices or locations. • Difficulty of moving or handling animals in areas of voltage/current exposure• The physiologic implications of the release of stress hormones produced by contact with painful stimuli. The severity of response will depend on the amount of electrical current (measured in milliamps) flowing through the animal’s body, the pathway it takes through the body, and the sensitivity of the individual animal. The results of the combined current dose-response experiments, voltage exposure response experiments, and measurements of body and contact resistances is consistent with the lowest (worst case) cow + contact resistance as low as 500 as estimated by Lefcourt that may occur in some unusual situations on farms (firm application of the muzzle to a wet metallic watering device and hoof contact on a clean, wet, contoured metallic plate on the floor). These studies on responses of dairy cows to electrical exposure agree well with each other and with predictions from neuroelectric theory and practice. There is a high degree of repeatability across studies in which exposures and responses have been appropriately quantified. For confirmation, a potential of 2 to 4 V (60 Hz, rms) must be measured between 2 points that an animal might contact (or animal contact measurement), and some animals should exhibit signs of avoidance behavior. The animal contact voltage measurement with an appropriate shunt resistor value provides the only reliable indication of exposure levels. Voltage readings at cow contact points should be made with a 500- or 1000- resistor across the 2 measuring leads to the cow contact points in addition to open circuit measurements. The only studies that have documented adverse effects of voltage and current on cows had both sufficient current applied to cause aversion and forced exposures (ie, animals could not eat or drink without being exposed to voltage and current) and all of the indirect responses (reduced water or intake and milk production) were behaviorally mediated. It is typical for voltage levels to vary considerably at different locations on a farm. Decreased water and/or feed intake or undesired behaviors result only if current levels are sufficient to produce aversion at locations that are critical to daily animal activity, such as feeders, waterers, and milking areas. If an aversive current occurs only a few times per day, it is not likely to have an adverse effect on cow behavior. The more often an aversive voltage occurs in areas critical to cows’ normal feeding, drinking, or resting, the more likely it is to affect cows. A number of studies have been done to investigate potential detrimental physiologic responses that may result from animals’ exposure to voltage and current. The literature review presented here summarizes 46 research trials on groups of cows exposed to know levels of voltage and/or current. Many of these were part of the same experiment but exposed cows at different levels of voltage or current. None of these trials or experiments (some using aggressive exposure of cows to mastitis organisms) showed a significant effect of voltage/current exposure on SCC or the incidence of mastitis. Many of these studies showed behavioral modification and some showed minor changes in milk yield, milk composition, or stress hormones (especially cortisol). These studies have shown that increased concentrations of the stress hormone cortisol do not occur at levels below behavioral response levels and only become apparent in some, but not all, cows at substantially higher voltage/current exposures than the threshold required for behavioral modification. This body of research indicates that while exposure to stray voltage at levels of 2 V to 4 V may be a mild stressor to dairy cows, it does not contribute to increased SCC or incidence of mastitis or reduced milk yield.

Electron bunch structure in energy recovery linac with high-voltage dc photoelectron gun

NASA Astrophysics Data System (ADS)

Saveliev, Y. M.; Jackson, F.; Jones, J. K.; McKenzie, J. W.

2016-09-01

The internal structure of electron bunches generated in an injector line with a dc photoelectron gun is investigated. Experiments were conducted on the ALICE (accelerators and lasers in combined experiments) energy recovery linac at Daresbury Laboratory. At a relatively low dc gun voltage of 230 kV, the bunch normally consisted of two beamlets with different electron energies, as well as transverse and longitudinal characteristics. The beamlets are formed at the head and the tail of the bunch. At a higher gun voltage of 325 kV, the beam substructure is much less pronounced and could be observed only at nonoptimal injector settings. Experiments and computer simulations demonstrated that the bunch structure develops during the initial beam acceleration in the superconducting rf booster cavity and can be alleviated either by increasing the gun voltage to the highest possible level or by controlling the beam acceleration from the gun voltage in the first accelerating structure.

Effect of different methods of pulse width modulation on power losses in an induction motor

NASA Astrophysics Data System (ADS)

Gulyaev, Alexander; Fokin, Dmitrii; Shuharev, Sergey; Ten, Evgenii

2017-10-01

We consider the calculation of modulation power losses in a system “induction motor-inverter” for various pulse width modulation (PWM) methods of the supply voltage. Presented values of modulation power losses are the result of modeling a system “DC link - two-level three-phase voltage inverter - induction motor - load”. In this study the power losses in a system “induction motor - inverter” are computed, as well as losses caused by higher harmonics of PWM supply voltage, followed by definition of active power consumed by the DC link for a specified value mechanical power on the induction motor shaft. Mechanical power was determined by the rotation speed and the torque on the motor shaft in various quasi-sinusoidal supply voltage PWM modes. These calculations reveal the best coefficient of performance (COP) in a system of a variable frequency drive (VFD) with independent voltage inverter controlled by induction motor PWM.

Electrical model of dielectric barrier discharge homogenous and filamentary modes

NASA Astrophysics Data System (ADS)

López-Fernandez, J. A.; Peña-Eguiluz, R.; López-Callejas, R.; Mercado-Cabrera, A.; Valencia-Alvarado, R.; Muñoz-Castro, A.; Rodríguez-Méndez, B. G.

2017-01-01

This work proposes an electrical model that combines homogeneous and filamentary modes of an atmospheric pressure dielectric barrier discharge cell. A voltage controlled electric current source has been utilized to implement the power law equation that represents the homogeneous discharge mode, which starts when the gas breakdown voltage is reached. The filamentary mode implies the emergence of electric current conducting channels (microdischarges), to add this phenomenon an RC circuit commutated by an ideal switch has been proposed. The switch activation occurs at a higher voltage level than the gas breakdown voltage because it is necessary to impose a huge electric field that contributes to the appearance of streamers. The model allows the estimation of several electric parameters inside the reactor that cannot be measured. Also, it is possible to appreciate the modes of the DBD depending on the applied voltage magnitude. Finally, it has been recognized a good agreement between simulation outcomes and experimental results.

Wireless multi-level terahertz amplitude modulator using active metamaterial-based spatial light modulation.

PubMed

Rout, Saroj; Sonkusale, Sameer

2016-06-27

The ever increasing demand for bandwidth in wireless communication systems will inevitably lead to the extension of operating frequencies toward the terahertz (THz) band known as the 'THz gap'. Towards closing this gap, we present a multi-level amplitude shift keying (ASK) terahertz wireless communication system using terahertz spatial light modulators (SLM) instead of traditional voltage mode modulation, achieving higher spectral efficiency for high speed communication. The fundamental principle behind this higher efficiency is the conversion of a noisy voltage domain signal to a noise-free binary spatial pattern for effective amplitude modulation of a free-space THz carrier wave. Spatial modulation is achieved using an an active metamaterial array embedded with pseudomorphic high-electron mobility (pHEMT) designed in a consumer-grade galium-arsenide (GaAs) integrated circuit process which enables electronic control of its THz transmissivity. Each array is assembled as individually controllable tiles for transmissive terahertz spatial modulation. Using the experimental data from our metamaterial based modulator, we show that a four-level ASK digital communication system has two orders of magnitude improvement in symbol error rate (SER) for a degradation of 20 dB in transmit signal-to-noise ratio (SNR) using spatial light modulation compared to voltage controlled modulation.

The effect of segmented anodes on the performance and plume of a Hall thruster

NASA Astrophysics Data System (ADS)

Kieckhafer, Alexander W.

Development of alternative propellants for Hall thruster operation is an active area of research. Xenon is the current propellant of choice for Hall thrusters, but can be costly in large thrusters and for extended test periods. Condensible propellants may offer an alternative to xenon, as they will not require costly active pumping to remove from a test facility, and may be less expensive to purchase. A method has been developed which uses segmented electrodes in the discharge channel of a Hall thruster to divert discharge current to and from the main anode and thus control the anode temperature. By placing a propellant reservoir in the anode, the evaporation rate, and hence, mass flow of propellant can be controlled. Segmented electrodes for thermal control of a Hall thruster represent a unique strategy of thruster design, and thus the performance of the thruster must be measured to determine the effect the electrodes have on the thruster. Furthermore, the source of any changes in thruster performance due to the adjustment of discharge current between the shims and the main anode must be characterized. A Hall thruster was designed and constructed with segmented electrodes. It was then tested at anode voltages between 300 and 400 V and mass flows between 4 and 6 mg/s, as well as 100%, 75%, 50%, 25%, and <5% of the discharge current on the shim electrodes. The level of current on the shims was adjusted by changing the shim voltage. At each operating point, the thruster performance, plume divergence, ion energy, and multiply charged ion fraction were measured. Thruster performance exhibited a small change with the level of discharge current on the shim electrodes. Thrust and specific impulse increased by as much as 6% and 7.7%, respectively, as discharge current was shifted from the main anode to the shims at constant anode voltage. Thruster efficiency did not change. Plume divergence was reduced by approximately 4 degrees of half-angle at high levels of current on the shims and at all combinations of mass flow and anode voltage. The fraction of singly charged xenon in the thruster plume varied between approximately 80% and 95% as the anode voltage and mass flow were changed, but did not show a significant change with shim current. Doubly and triply charged xenon made up the remainder of the ions detected. Ion energy exhibited a mixed behavior. The highest voltage present in the thruster largely dictated the most probable energy; either shim or anode voltage, depending on which was higher. The overall change in most probable ion energy was 20-30 eV, the majority of which took place while the shim voltage was higher than the anode voltage. The thrust, specific impulse, plume divergence, and ion energy all indicate that the thruster is capable of a higher performance output at high levels of discharge current on the shims. The lack of a change in efficiency and fraction of multiply charged ions indicate that the thruster can be operated at any level of current on the shims without detrimental effect, and thus a condensible propellant thruster can control the anode temperature without a decrease in efficiency or a change in the multiply charged ion fraction.

Higher success rate with transcranial electrical stimulation of motor-evoked potentials using constant-voltage stimulation compared with constant-current stimulation in patients undergoing spinal surgery.

PubMed

Shigematsu, Hideki; Kawaguchi, Masahiko; Hayashi, Hironobu; Takatani, Tsunenori; Iwata, Eiichiro; Tanaka, Masato; Okuda, Akinori; Morimoto, Yasuhiko; Masuda, Keisuke; Tanaka, Yuu; Tanaka, Yasuhito

2017-10-01

During spine surgery, the spinal cord is electrophysiologically monitored via transcranial electrical stimulation of motor-evoked potentials (TES-MEPs) to prevent injury. Transcranial electrical stimulation of motor-evoked potential involves the use of either constant-current or constant-voltage stimulation; however, there are few comparative data available regarding their ability to adequately elicit compound motor action potentials. We hypothesized that the success rates of TES-MEP recordings would be similar between constant-current and constant-voltage stimulations in patients undergoing spine surgery. The objective of this study was to compare the success rates of TES-MEP recordings between constant-current and constant-voltage stimulation. This is a prospective, within-subject study. Data from 100 patients undergoing spinal surgery at the cervical, thoracic, or lumbar level were analyzed. The success rates of the TES-MEP recordings from each muscle were examined. Transcranial electrical stimulation with constant-current and constant-voltage stimulations at the C3 and C4 electrode positions (international "10-20" system) was applied to each patient. Compound muscle action potentials were bilaterally recorded from the abductor pollicis brevis (APB), deltoid (Del), abductor hallucis (AH), tibialis anterior (TA), gastrocnemius (GC), and quadriceps (Quad) muscles. The success rates of the TES-MEP recordings from the right Del, right APB, bilateral Quad, right TA, right GC, and bilateral AH muscles were significantly higher using constant-voltage stimulation than those using constant-current stimulation. The overall success rates with constant-voltage and constant-current stimulations were 86.3% and 68.8%, respectively (risk ratio 1.25 [95% confidence interval: 1.20-1.31]). The success rates of TES-MEP recordings were higher using constant-voltage stimulation compared with constant-current stimulation in patients undergoing spinal surgery. Copyright © 2017 Elsevier Inc. All rights reserved.

In Situ X-ray Diffraction Studies on the Mechanism of Capacity Retention Improvement by Coating at the Surface of Li CoO2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chung,K.; Yoon, W.; McBreen, J.

2007-01-01

Synchrotron based in situ X-ray diffraction technique has been used to study the mechanism of capacity fading of LiCoO2 cycled to a higher voltage above the normal 4.2 V limit and to investigate the mechanism of capacity retention improvement by ZrO2 surface coating on LiCoO2. It was found that the capacity fading of LiCoO2 cycled at higher voltage limit is closely related to the increased polarization rather than the bulk crystal structure damage. The capacity of uncoated LiCoO2 sample dropped to less than 70 mAh g-1 when charged to 4.8 V after high voltage cycling. However, when the voltage limitmore » was further increased to 8.35 V, the capacity was partially restored and the corresponding structural changes were recovered to the similar level as seen in fresh sample. This indicates that the integrity of the bulk crystal structure of LiCoO2 was not seriously damaged during cycling to 4.8 V. The increased polarization seems to be responsible for the fading capacity and the uncompleted phase transformation of LiCoO2. The polarization-induced capacity fading can be significantly improved by ZrO2 surface coating. It was proposed that the effect of ZrO2-coating layer on the capacity retention during high voltage cycling is through the formation of protection layer on the surface of LiCoO2 particles, which can reduce the decomposition of the electrolyte at higher voltages.« less

The effect of diffusion induced lattice stress on the open-circuit voltage in silicon solar cells

NASA Technical Reports Server (NTRS)

Weizer, V. G.; Godlewski, M. P.

1984-01-01

It is demonstrated that diffusion induced stresses in low resistivity silicon solar cells can significantly reduce both the open-circuit voltage and collection efficiency. The degradation mechanism involves stress induced changes in both the minority carrier mobility and the diffusion length. Thermal recovery characteristics indicate that the stresses are relieved at higher temperatures by divacancy flow (silicon self diffusion). The level of residual stress in as-fabricated cells was found to be negligible in the cells tested.

High-Energy-Density Electrolytic Capacitors

NASA Technical Reports Server (NTRS)

Yen, Shiao-Ping S.; Lewis, Carol R.

1993-01-01

Reductions in weight and volume make new application possible. Supercapacitors and improved ultracapacitors advanced electrolytic capacitors developed for use as electric-load-leveling devices in such applications as electric vehicle propulsion systems, portable power tools, and low-voltage pulsed power supplies. One primary advantage: offer power densities much higher than storage batteries. Capacitors used in pulse mode, with short charge and discharge times. Derived from commercially available ultracapacitors. Made of lightweight materials; incorporate electrode/electrolyte material systems capable of operation at voltages higher than previous electrode/electrolyte systems. By use of innovative designs and manufacturing processes, made in wide range of rated capacitances and in rated operating potentials ranging from few to several hundred volts.

Multi-KW dc distribution system technology research study

NASA Technical Reports Server (NTRS)

Dawson, S. G.

1978-01-01

The Multi-KW DC Distribution System Technology Research Study is the third phase of the NASA/MSFC study program. The purpose of this contract was to complete the design of the integrated technology test facility, provide test planning, support test operations and evaluate test results. The subjet of this study is a continuation of this contract. The purpose of this continuation is to study and analyze high voltage system safety, to determine optimum voltage levels versus power, to identify power distribution system components which require development for higher voltage systems and finally to determine what modifications must be made to the Power Distribution System Simulator (PDSS) to demonstrate 300 Vdc distribution capability.

Synthesis of polymer nanostructures with conductance switching properties

DOEpatents

Su, Kai; Nuraje, Nurxat; Zhang, Lingzhi; Matsui, Hiroshi; Yang, Nan Loh

2015-03-03

The present invention is directed to crystalline organic polymer nanoparticles comprising a conductive organic polymer; wherein the crystalline organic polymer nanoparticles have a size of from 10 nm to 200 nm and exhibits two current-voltage states: (1) a high resistance current-voltage state, and (2) a low resistance current-voltage state, wherein when a first positive threshold voltage (V.sub.th1) or higher positive voltage, or a second negative threshold voltage (V.sub.th2) or higher negative voltage is applied to the nanoparticle, the nanoparticle exhibits the low-resistance current-voltage state, and when a voltage less positive than the first positive threshold voltage or a voltage less negative than the second negative threshold voltage is applied to the nanoparticle, the nanoparticle exhibits the high-resistance current-voltage state. The present invention is also directed methods of manufacturing the nanoparticles using novel interfacial oxidative polymerization techniques.

Oxygen plasma immersion ion implantation treatment to enhance data retention of tungsten nanocrystal nonvolatile memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jer-Chyi, E-mail: jcwang@mail.cgu.edu.tw; Chang, Wei-Cheng; Lai, Chao-Sung, E-mail: cslai@mail.cgu.edu.tw

Data retention characteristics of tungsten nanocrystal (W-NC) memory devices using an oxygen plasma immersion ion implantation (PIII) treatment are investigated. With an increase of oxygen PIII bias voltage and treatment time, the capacitance–voltage hysteresis memory window is increased but the data retention characteristics become degraded. High-resolution transmission electron microscopy images show that this poor data retention is a result of plasma damage on the tunneling oxide layer, which can be prevented by lowering the bias voltage to 7 kV. In addition, by using the elevated temperature retention measurement technique, the effective charge trapping level of the WO{sub 3} film surrounding themore » W-NCs can be extracted. This measurement reveals that a higher oxygen PIII bias voltage and treatment time induces more shallow traps within the WO{sub 3} film, degrading the retention behavior of the W-NC memory.« less

A nanoscale piezoelectric transformer for low-voltage transistors.

PubMed

Agarwal, Sapan; Yablonovitch, Eli

2014-11-12

A novel piezoelectric voltage transformer for low-voltage transistors is proposed. Placing a piezoelectric transformer on the gate of a field-effect transistor results in the piezoelectric transformer field-effect transistor that can switch at significantly lower voltages than a conventional transistor. The piezoelectric transformer operates by using one piezoelectric to squeeze another piezoelectric to generate a higher output voltage than the input voltage. Multiple piezoelectrics can be used to squeeze a single piezoelectric layer to generate an even higher voltage amplification. Coupled electrical and mechanical modeling in COMSOL predicts a 12.5× voltage amplification for a six-layer piezoelectric transformer. This would lead to more than a 150× reduction in the power needed for communications.

Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors.

PubMed

Talbo, Vincent; Saint-Martin, Jérôme; Retailleau, Sylvie; Dollfus, Philippe

2017-11-01

By means of advanced numerical simulation, the thermoelectric properties of a Si-quantum dot-based single-electron transistor operating in sequential tunneling regime are investigated in terms of figure of merit, efficiency and power. By taking into account the phonon-induced collisional broadening of energy levels in the quantum dot, both heat and electrical currents are computed in a voltage range beyond the linear response. Using our homemade code consisting in a 3D Poisson-Schrödinger solver and the resolution of the Master equation, the Seebeck coefficient at low bias voltage appears to be material independent and nearly independent on the level broadening, which makes this device promising for metrology applications as a nanoscale standard of Seebeck coefficient. Besides, at higher voltage bias, the non-linear characteristics of the heat current are shown to be related to the multi-level effects. Finally, when considering only the electronic contribution to the thermal conductance, the single-electron transistor operating in generator regime is shown to exhibit very good efficiency at maximum power.

Study of Lead as a Source X-ray Radiation Protection with an Analysis Grey Level Image

NASA Astrophysics Data System (ADS)

Susilo; Rahma, I. N.; Mosik; Masturi

2017-04-01

X-ray utilization in the medical field still has a potential danger for the human. This occurs when exposure to x-ray radiation received exceeds the dose limit value. It required a radiation shielding to prevent the hazard, and lead is one of the metals usually used as x-ray radiation shield. This work aims to determine the metallic lead properties to find out of the step wedge lead radiograph image. The instruments used are the plane x-ray, digital radiography system and personal computer installed by MATLAB, while the material is step wedge lead. The image of radiograph was analysed using GUI applications on MATLAB software to determine the values of grey level from the image and the optical density of the radiograph image. The results showed the greater optical density, the higher the image contrast, and the value of optical density in the image is inversely proportional to the voltage x-ray since the value of grey level at high voltage is smaller than that of at low voltage.

Superluminescence from an optically pumped molecular tunneling junction by injection of plasmon induced hot electrons

PubMed Central

Braun, Kai; Wang, Xiao; Kern, Andreas M; Adler, Hilmar; Peisert, Heiko; Chassé, Thomas; Zhang, Dai

2015-01-01

Summary Here, we demonstrate a bias-driven superluminescent point light-source based on an optically pumped molecular junction (gold substrate/self-assembled molecular monolayer/gold tip) of a scanning tunneling microscope, operating at ambient conditions and providing almost three orders of magnitude higher electron-to-photon conversion efficiency than electroluminescence induced by inelastic tunneling without optical pumping. A positive, steadily increasing bias voltage induces a step-like rise of the Stokes shifted optical signal emitted from the junction. This emission is strongly attenuated by reversing the applied bias voltage. At high bias voltage, the emission intensity depends non-linearly on the optical pump power. The enhanced emission can be modelled by rate equations taking into account hole injection from the tip (anode) into the highest occupied orbital of the closest substrate-bound molecule (lower level) and radiative recombination with an electron from above the Fermi level (upper level), hence feeding photons back by stimulated emission resonant with the gap mode. The system reflects many essential features of a superluminescent light emitting diode. PMID:26171286

Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

NASA Technical Reports Server (NTRS)

Adell, Philippe C.; Mojarradi, Mohammad; DelCastillo, Linda Y.; Vo, Tuan A.

2011-01-01

A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

Low voltage to high voltage level shifter and related methods

NASA Technical Reports Server (NTRS)

Mentze, Erik J. (Inventor); Buck, Kevin M. (Inventor); Hess, Herbert L. (Inventor); Cox, David F. (Inventor)

2006-01-01

A shifter circuit comprises a high and low voltage buffer stages and an output buffer stage. The high voltage buffer stage comprises multiple transistors arranged in a transistor stack having a plurality of intermediate nodes connecting individual transistors along the stack. The transistor stack is connected between a voltage level being shifted to and an input voltage. An inverter of this stage comprises multiple inputs and an output. Inverter inputs are connected to a respective intermediate node of the transistor stack. The low voltage buffer stage has an input connected to the input voltage and an output, and is operably connected to the high voltage buffer stage. The low voltage buffer stage is connected between a voltage level being shifted away from and a lower voltage. The output buffer stage is driven by the outputs of the high voltage buffer stage inverter and the low voltage buffer stage.

A Wide-Range Tunable Level-Keeper Using Vertical Metal-Oxide-Semiconductor Field-Effect Transistors for Current-Reuse Systems

NASA Astrophysics Data System (ADS)

Tanoi, Satoru; Endoh, Tetsuo

2012-04-01

A wide-range tunable level-keeper using vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed for current-reuse analog systems. The design keys for widening tunable range of the operation are a two-path feed-back and a vertical MOSFET with back-bias-effect free. The proposed circuit with the vertical MOSFETs shows the 1.23-V tunable-range of the input level with the 2.4-V internal-supply voltage (VDD) in the simulation. This tunable-range of the proposed circuit is 4.7 times wider than that of the conventional. The achieved current efficiency of the proposed level-keeper is 66% at the 1.2-V output with the 2.4-V VDD. This efficiency of the proposed circuit is twice higher than that of the traditional voltage down converter.

Electron-Electron and Electron-Phonon interactions effects on the tunnel electronic spectrum of PbS quantum dots

NASA Astrophysics Data System (ADS)

Wang, Hongyue; Lhuillier, Emmanuel; Yu, Qian; Mottaghizadeh, Alireza; Ulysse, Christian; Zimmers, Alexandre; Dubertret, Benoit; Aubin, Herve

2015-03-01

We present a tunnel spectroscopy study of the electronic spectrum of single PbS Quantum Dots (QDs) trapped between nanometer-spaced electrodes, measured at low temperature T=5 K. The carrier filling of the QD can be controlled either by the drain voltage in the shell filling regime or by a gate voltage. In the empty QD, the tunnel spectrum presents the expected signature of the 8x degenerated excited levels. In the drain controlled shell filling regime, the levels degeneracies are lifted by the global electrostatic Coulomb energy of the QD; in the gate controlled shell filling regime, the levels degeneracies are lifted by the intra-Coulomb interactions. In the charged quantum dot, electron-phonons interactions lead to the apparition of Franck-Condon side bands on the single excited levels and possibly Franck Condon blockade at low energy. The sharpening of excited levels at higher gate voltage suggests that the magnitude of electron-phonon interactions is decreased upon increasing the electron filling in the quantum dot. This work was supported by the French ANR Grants 10-BLAN-0409-01, 09-BLAN-0388-01, by the Region Ile-de-France in the framework of DIM Nano-K and by China Scholarship Council.

Electrostatic separation for recycling conductors, semiconductors, and nonconductors from electronic waste.

PubMed

Xue, Mianqiang; Yan, Guoqing; Li, Jia; Xu, Zhenming

2012-10-02

Electrostatic separation has been widely used to separate conductors and nonconductors for recycling e-waste. However, the components of e-waste are complex, which can be classified as conductors, semiconductors, and nonconductors according to their conducting properties. In this work, we made a novel attempt to recover the mixtures containing conductors (copper), semiconductors (extrinsic silicon), and nonconductors (woven glass reinforced resin) by electrostatic separation. The results of binary mixtures separation show that the separation of conductor and nonconductor, semiconductor and nonconductor need a higher voltage level while the separation of conductor and semiconductor needs a higher roll speed. Furthermore, the semiconductor separation efficiency is more sensitive to the high voltage level and the roll speed than the conductor separation efficiency. An integrated process was proposed for the multiple mixtures separation. The separation efficiency of conductors and semiconductors can reach 82.5% and 88%, respectively. This study contributes to the efficient recycling of valuable resources from e-waste.

Attofarad resolution capacitance-voltage measurement of nanometer scale field effect transistors utilizing ambient noise.

PubMed

Gokirmak, Ali; Inaltekin, Hazer; Tiwari, Sandip

2009-08-19

A high resolution capacitance-voltage (C-V) characterization technique, enabling direct measurement of electronic properties at the nanoscale in devices such as nanowire field effect transistors (FETs) through the use of random fluctuations, is described. The minimum noise level required for achieving sub-aF (10(-18) F) resolution, the leveraging of stochastic resonance, and the effect of higher levels of noise are illustrated through simulations. The non-linear DeltaC(gate-source/drain)-V(gate) response of FETs is utilized to determine the inversion layer capacitance (C(inv)) and carrier mobility. The technique is demonstrated by extracting the carrier concentration and effective electron mobility in a nanoscale Si FET with C(inv) = 60 aF.

Multivariable polynomial fitting of controlled single-phase nonlinear load of input current total harmonic distortion

NASA Astrophysics Data System (ADS)

Sikora, Roman; Markiewicz, Przemysław; Pabjańczyk, Wiesława

2018-04-01

The power systems usually include a number of nonlinear receivers. Nonlinear receivers are the source of disturbances generated to the power system in the form of higher harmonics. The level of these disturbances describes the total harmonic distortion coefficient THD. Its value depends on many factors. One of them are the deformation and change in RMS value of supply voltage. A modern LED luminaire is a nonlinear receiver as well. The paper presents the results of the analysis of the influence of change in RMS value of supply voltage and the level of dimming of the tested luminaire on the value of the current THD. The analysis was made using a mathematical model based on multivariable polynomial fitting.

A monostable piezoelectric energy harvester for broadband low-level excitations

NASA Astrophysics Data System (ADS)

Fan, Kangqi; Tan, Qinxue; Zhang, Yiwei; Liu, Shaohua; Cai, Meiling; Zhu, Yingmin

2018-03-01

This letter presents a monostable piezoelectric energy harvester (PEH) for achieving enhanced energy extraction from low-level excitations. The proposed PEH is realized by introducing symmetric magnetic attraction to a piezoelectric cantilever beam and a pair of stoppers to confine the maximum deflection of the beam. The lumped parameter model of such a system is presented and experimentally validated. Theoretical simulations and experimental measurements demonstrate that the proposed design can bring about a wider operating bandwidth and higher output voltage than the linear PEH. Under a sinusoidal vibration with an amplitude of 3 m/s2, a 54% increase in the operating bandwidth and a 253% increase in the magnitude of output power are achieved compared to its linear counterpart. Moreover, the proposed PEH exhibits rich dynamic features, including the tunable operating bandwidth, adjustable voltage and power levels, and softening hysteresis.

A comprehensive study to evaluate the effect of constant low voltage iontophoresis on transungual delivery.

PubMed

Nair, Anroop B; Singh, Kishan; Shinu, Pottathil; Harsha, Sree; Al-Dhubiab, Bandar E

2013-05-01

Treatment of nail diseases by topical drug delivery continues to draw much attention in the recent days. This study aims to systematically investigate the effect of constant voltage iontophoresis in the transungual drug delivery, using ciclopirox as a model drug. Preliminary permeation studies were carried out by applying constant voltage (6 V for 24 h) using a gel formulation across the human nail plate in a Franz diffusion cell. Different protocols have been studied to authenticate the potential of the proposed technique. Antifungal studies were carried out to assess the pharmacodynamic effect of drug depot formed in the nail plate. Initial studies revealed that application of constant voltage iontophoresis enhanced the permeation by an order of magnitude (p = 0.019) and delivered significant amount of drug into the deeper nail layers. Noticeably higher permeation was observed during the active phase in on-off studies. Excellent correlation was observed in permeation (r(2) = 0.98) and drug load (r(2) = 0.97) with the increase in applied voltage (3-12 V), indicating that the current technique is predictable. The data observed suggest that any further increase in voltage could eventually lead to increase in the permeation and drug load, as the saturation level is very distant. Furthermore, the enhancement in permeation with the applied voltage (3-12 V) was found to be 6-20 folds, compared to the passive process. Results of step up and step down studies substantiated the viability of the current technique. Zone of inhibition measured during the antifungal studies demonstrated that the drug molecules loaded into the nail plate by low voltage iontophoresis is active and releases over an extended period of time (~32 days). Given the excellent results, the current technique could be used as an effective approach for the delivery of antimycotics, which would localize the drug at the infection site and potentially offer higher patient compliance.

Voltage-Gated Na+ Channel Isoforms and Their mRNA Expression Levels and Protein Abundance in Three Electric Organs and the Skeletal Muscle of the Electric Eel Electrophorus electricus

PubMed Central

Hiong, Kum C.; Boo, Mel V.; Wong, Wai P.; Chew, Shit F.

2016-01-01

This study aimed to obtain the coding cDNA sequences of voltage-gated Na+ channel (scn) α-subunit (scna) and β-subunit (scnb) isoforms from, and to quantify their transcript levels in, the main electric organ (EO), Hunter’s EO, Sach’s EO and the skeletal muscle (SM) of the electric eel, Electrophorus electricus, which can generate both high and low voltage electric organ discharges (EODs). The full coding sequences of two scna (scn4aa and scn4ab) and three scnb (scn1b, scn2b and scn4b) were identified for the first time (except scn4aa) in E. electricus. In adult fish, the scn4aa transcript level was the highest in the main EO and the lowest in the Sach’s EO, indicating that it might play an important role in generating high voltage EODs. For scn4ab/Scn4ab, the transcript and protein levels were unexpectedly high in the EOs, with expression levels in the main EO and the Hunter’s EO comparable to those of scn4aa. As the key domains affecting the properties of the channel were mostly conserved between Scn4aa and Scn4ab, Scn4ab might play a role in electrogenesis. Concerning scnb, the transcript level of scn4b was much higher than those of scn1b and scn2b in the EOs and the SM. While the transcript level of scn4b was the highest in the main EO, protein abundance of Scn4b was the highest in the SM. Taken together, it is unlikely that Scna could function independently to generate EODs in the EOs as previously suggested. It is probable that different combinations of Scn4aa/Scn4ab and various Scnb isoforms in the three EOs account for the differences in EODs produced in E. electricus. In general, the transcript levels of various scn isoforms in the EOs and the SM were much higher in adult than in juvenile, and the three EOs of the juvenile fish could be functionally indistinct. PMID:27907137

Voltage-gated calcium flux mediates Escherichia coli mechanosensation.

PubMed

Bruni, Giancarlo N; Weekley, R Andrew; Dodd, Benjamin J T; Kralj, Joel M

2017-08-29

Electrically excitable cells harness voltage-coupled calcium influx to transmit intracellular signals, typically studied in neurons and cardiomyocytes. Despite intense study in higher organisms, investigations of voltage and calcium signaling in bacteria have lagged due to their small size and a lack of sensitive tools. Only recently were bacteria shown to modulate their membrane potential on the timescale of seconds, and little is known about the downstream effects from this modulation. In this paper, we report on the effects of electrophysiology in individual bacteria. A genetically encoded calcium sensor expressed in Escherichia coli revealed calcium transients in single cells. A fusion sensor that simultaneously reports voltage and calcium indicated that calcium influx is induced by voltage depolarizations, similar to metazoan action potentials. Cytoplasmic calcium levels and transients increased upon mechanical stimulation with a hydrogel, and single cells altered protein concentrations dependent on the mechanical environment. Blocking voltage and calcium flux altered mechanically induced changes in protein concentration, while inducing calcium flux reproduced these changes. Thus, voltage and calcium relay a bacterial sense of touch and alter cellular lifestyle. Although the calcium effectors remain unknown, these data open a host of new questions about E. coli , including the identity of the underlying molecular players, as well as other signals conveyed by voltage and calcium. These data also provide evidence that dynamic voltage and calcium exists as a signaling modality in the oldest domain of life, and therefore studying electrophysiology beyond canonical electrically excitable cells could yield exciting new findings.

Voltage-gated calcium flux mediates Escherichia coli mechanosensation

PubMed Central

Weekley, R. Andrew; Dodd, Benjamin J. T.

2017-01-01

Electrically excitable cells harness voltage-coupled calcium influx to transmit intracellular signals, typically studied in neurons and cardiomyocytes. Despite intense study in higher organisms, investigations of voltage and calcium signaling in bacteria have lagged due to their small size and a lack of sensitive tools. Only recently were bacteria shown to modulate their membrane potential on the timescale of seconds, and little is known about the downstream effects from this modulation. In this paper, we report on the effects of electrophysiology in individual bacteria. A genetically encoded calcium sensor expressed in Escherichia coli revealed calcium transients in single cells. A fusion sensor that simultaneously reports voltage and calcium indicated that calcium influx is induced by voltage depolarizations, similar to metazoan action potentials. Cytoplasmic calcium levels and transients increased upon mechanical stimulation with a hydrogel, and single cells altered protein concentrations dependent on the mechanical environment. Blocking voltage and calcium flux altered mechanically induced changes in protein concentration, while inducing calcium flux reproduced these changes. Thus, voltage and calcium relay a bacterial sense of touch and alter cellular lifestyle. Although the calcium effectors remain unknown, these data open a host of new questions about E. coli, including the identity of the underlying molecular players, as well as other signals conveyed by voltage and calcium. These data also provide evidence that dynamic voltage and calcium exists as a signaling modality in the oldest domain of life, and therefore studying electrophysiology beyond canonical electrically excitable cells could yield exciting new findings. PMID:28808010

60 V tolerance full symmetrical switch for battery monitor IC

NASA Astrophysics Data System (ADS)

Zhang, Qidong; Yang, Yintang; Chai, Changchun

2017-06-01

For stacked battery monitoring IC high speed and high precision voltage acquisition requirements, this paper introduces a kind of symmetrical type high voltage switch circuit. This kind of switch circuit uses the voltage following structure, which eliminates the leakage path of input signals. At the same time, this circuit adopts a high speed charge pump structure, in any case the input signal voltage is higher than the supply voltage, it can fast and accurately turn on high voltage MOS devices, and convert the battery voltage to an analog to digital converter. The proposed high voltage full symmetry switch has been implemented in a 0.18 μm BCD process; simulated and measured results show that the proposed switch can always work properly regardless of the polarity of the voltage difference between the input signal ports and an input signal higher than the power supply. Project supported by the National Natural Science Foundation of China (No. 61334003).

Hybrid electric vehicle power management system

DOEpatents

Bissontz, Jay E.

2015-08-25

Level voltage levels/states of charge are maintained among a plurality of high voltage DC electrical storage devices/traction battery packs that are arrayed in series to support operation of a hybrid electric vehicle drive train. Each high voltage DC electrical storage device supports a high voltage power bus, to which at least one controllable load is connected, and at least a first lower voltage level electrical distribution system. The rate of power transfer from the high voltage DC electrical storage devices to the at least first lower voltage electrical distribution system is controlled by DC-DC converters.

Autoradiographic localization of voltage-dependent sodium channels on the mouse neuromuscular junction using /sup 125/I-alpha scorpion toxin. I. Preferential labeling of glial cells on the presynaptic side

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boudier, J.L.; Jover, E.; Cau, P.

1988-05-01

Alpha-scorpion toxins bind specifically to the voltage-sensitive sodium channel in excitable membranes, and binding is potential-dependent. The radioiodinated toxin II from the scorpion Androctonus australis Hector (alpha ScTx) was used to localize voltage-sensitive sodium channels on the presynaptic side of mouse neuromuscular junctions (NMJ) by autoradiography using both light and electron microscopy. Silver grain localization was analyzed by the cross-fire method. At the light-microscopic level, grain density over NMJ appeared 6-8x higher than over nonjunctional muscle membrane. The specificity of labeling was verified by competition/displacement with an excess of native alpha ScTx. Labeling was also inhibited by incubation in depolarizingmore » conditions, showing its potential-dependence. At the electron-microscopic level, analysis showed that voltage-sensitive sodium channels labeled with alpha ScTx were almost exclusively localized on membranes, as expected. Due to washout after incubation, appreciable numbers of binding sites were not found on the postsynaptic membranes. However, on the presynaptic side, alpha ScTx-labeled voltage-sensitive sodium channels were localized on the membrane of non-myelin-forming Schwann cells covering NMJ. The axonal presynaptic membrane was not labeled. These results show that voltage-sensitive sodium channels are present on glial cells in vivo, as already demonstrated in vitro. It is proposed that these glial channels could be indirectly involved in the ionic homeostasis of the axonal environment.« less

Sleep deprivation affects somatosensory cortex excitability as tested through median nerve stimulation.

PubMed

Gorgoni, Maurizio; Ferlazzo, Fabio; Moroni, Fabio; D'Atri, Aurora; Donarelli, Stefania; Fanelli, Stefania; Gizzi Torriglia, Isabella; Lauri, Giulia; Ferrara, Michele; Marzano, Cristina; Rossini, Paolo Maria; Bramanti, Placido; De Gennaro, Luigi

2014-01-01

Changes of cortical excitability after sleep deprivation (SD) in humans have been investigated mostly in motor cortex, while there is little empirical evidence concerning somatosensory cortex, and its plastic changes across SD. To assess excitability of primary somatosensory cortex (S1) and EEG voltage topographical characteristics associated with somatosensory evoked potentials (SEPs) during SD. Across 41 h of SD, 16 healthy subjects participated in 4 experimental sessions (11.00 a.m. and 11.00 p.m. of the 1st and 2nd day) with: a) subjective sleepiness ratings; b) EEG recordings; c) SEPs recordings; d) behavioral vigilance responses. A clear enhancement of cortical excitability after SD was indexed by: (a) an amplitude increase of different SEPs component in S1; (b) higher voltage in occipital (around 35-43 ms) and fronto-central areas (around 47-62 ms). Circadian fluctuations did not affect cortical excitability. Voltage changes in S1 were strongly related with post-SD fluctuations of subjective and behavioral sleepiness. Sleep may have a role in keeping cortical excitability at optimal (namely below potentially dangerous) levels for the human brain, rebalancing progressive changes in cortical responsiveness to incoming inputs occurred during time spent awake. On the other hand, higher level of cortical responsiveness after sleep loss may be one of the mechanisms accounting for post-SD alterations in vigilance and behavior. Copyright © 2014 Elsevier Inc. All rights reserved.

Combined effect of CVR and penetration of DG in the voltage profile and losses of lowvoltage secondary distribution networks

NASA Astrophysics Data System (ADS)

Bokhari, Abdullah

Demarcations between traditional distribution power systems and distributed generation (DG) architectures are increasingly evolving as higher DG penetration is introduced in the system. The concerns in existing electric power systems (EPSs) to accommodate less restrictive interconnection policies while maintaining reliability and performance of power delivery have been the major challenge for DG growth. In this dissertation, the work is aimed to study power quality, energy saving and losses in a low voltage distributed network under various DG penetration cases. Simulation platform suite that includes electric power system, distributed generation and ZIP load models is implemented to determine the impact of DGs on power system steady state performance and the voltage profile of the customers/loads in the network under the voltage reduction events. The investigation designed to test the DG impact on power system starting with one type of DG, then moves on multiple DG types distributed in a random case and realistic/balanced case. The functionality of the proposed DG interconnection is designed to meet the basic requirements imposed by the various interconnection standards, most notably IEEE 1547, public service commission, and local utility regulation. It is found that implementation of DGs on the low voltage secondary network would improve customer's voltage profile, system losses and significantly provide energy savings and economics for utilities. In a network populated with DGs, utility would have a uniform voltage profile at the customers end as the voltage profile becomes more concentrated around targeted voltage level. The study further reinforced the concept that the behavior of DG in distributed network would improve voltage regulation as certain percentage reduction on utility side would ensure uniform percentage reduction seen by all customers and reduce number of voltage violations.

High Voltage Pulsed Radiofrequency for the Treatment of Refractory Neuralgia of the Infraorbital Nerve: A Prospective Double-Blinded Randomized Controlled Study.

PubMed

Luo, Fang; Wang, Tao; Shen, Ying; Meng, Lan; Lu, Jingjing; Ji, Nan

2017-05-01

A recent study showed that 50% of patients who suffered from refractory neuralgia of the infraorbital nerve obtained satisfactory efficacy after pulsed radiofrequency (PRF) treatment. A pilot study showed that increasing the output voltage of PRF significantly improved the efficacy for trigeminal neuralgia; however, whether increasing the output voltage of PRF can improve the treatment outcomes for neuralgia of the infraorbital nerve is unknown. To evaluate the efficacy and safety of high voltage PRF treatment in comparison with standard voltage PRF for neuralgia of the infraorbital nerve. Prospective, single-center, double-blinded, randomized, controlled trial. Beijing Tiantan Hospital, Capital Medical University. A total of 60 patients with refractory neuralgia of the infraorbital nerve were randomly divided into the high voltage PRF group and the standard voltage PRF group to treat their infraorbital nerves. Neither the patients, pain physicians, nor the follow-up evaluators knew the patient group assignments. The primary outcome measure was the one-year response rate. The secondary outcome measures included the time to take effect after PRF, the one-month, 3-month, and 6-month response rates, the relapse rate, and adverse reactions. The intent-to-treat analysis showed that the one-month, 3-month, 6-month, and one-year response rates were all 90% in the high voltage group, which were significantly higher than the rates in the standard voltage group (67% [P < 0.05], 67% [P < 0.05], 63% [P < 0.05], and 60% [P <0.01], respectively). Furthermore, 27% of the patients in the high-voltage group and 13% of the patients in the standard voltage group experienced minor transient (10 - 30 days) numbness in the innervation area after PRF; no other serious adverse reactions were observed in the 2 groups (P > 0.05). We did not investigate the dose-effect relationship between the output voltage and efficacy or the effect of a higher pulse dose on efficacy. This study was a single-center study, and multi-center, randomized, controlled studies are needed to obtain the highest level of empirical evidence. Additionally, the follow-up period lasted only one year in this study; thus, long-term efficacy needs to be further confirmed. The results showed that high voltage PRF was effective and safe for patients with refractory neuralgia of the infraorbital nerve and could become a treatment option in patients who do not respond to conservative treatment.

Effects of cyclic impacts on the performance of a piezo-composite electricity generating element in a d33 mode energy harvesting.

PubMed

Pham, Van Lai; Ha, Ngoc San; Goo, Nam Seo; Choo, Jinkyo F

2014-10-01

The increasing use of piezoelectric generators to harvest energy from various ambient sources requires the establishment of durability data for piezoelectric materials. In this paper, a d3 mode piezocomposite electricity generating element (PCGE) was tested for its durability under cyclic impact loading. For this purpose, a motor driven lever system was designed to apply constant impact force on PCGEs. To investigate the durability of PCGEs, the output voltage of the PCGEs was observed upon repeated application of an impact force until eventual loss of the generated voltage. The experimental results enabled to determine the number of cycles until which PCGEs can be used without loss of their electricity generation performance with respect to the stress level applied on the PCGEs. At low stress level (around 0.76 MPa or lower), the PCGE showed almost insignificant degradation even after 2 million cycles whereas degradation occurred sooner (after 8 x 10(5) cycles) at higher stress levels (around 0.92 MPa or higher). The effects of impact loading on the durability of the PCGEs were also examined by X-ray photographs of the specimens.

Optimization of power systems with voltage security constraints

NASA Astrophysics Data System (ADS)

Rosehart, William Daniel

As open access market principles are applied to power systems, significant changes in their operation and control are occurring. In the new marketplace, power systems are operating under higher loading conditions as market influences demand greater attention to operating cost versus stability margins. Since stability continues to be a basic requirement in the operation of any power system, new tools are being considered to analyze the effect of stability on the operating cost of the system, so that system stability can be incorporated into the costs of operating the system. In this thesis, new optimal power flow (OPF) formulations are proposed based on multi-objective methodologies to optimize active and reactive power dispatch while maximizing voltage security in power systems. The effects of minimizing operating costs, minimizing reactive power generation and/or maximizing voltage stability margins are analyzed. Results obtained using the proposed Voltage Stability Constrained OPF formulations are compared and analyzed to suggest possible ways of costing voltage security in power systems. When considering voltage stability margins the importance of system modeling becomes critical, since it has been demonstrated, based on bifurcation analysis, that modeling can have a significant effect of the behavior of power systems, especially at high loading levels. Therefore, this thesis also examines the effects of detailed generator models and several exponential load models. Furthermore, because of its influence on voltage stability, a Static Var Compensator model is also incorporated into the optimization problems.

High current nonlinear transmission line based electron beam driver

NASA Astrophysics Data System (ADS)

Hoff, B. W.; French, D. M.; Simon, D. S.; Lepell, P. D.; Montoya, T.; Heidger, S. L.

2017-10-01

A gigawatt-class nonlinear transmission line based electron beam driver is experimentally demonstrated. Four experimental series, each with a different Marx bank charge voltage (15, 20, 25, and 30 kV), were completed. Within each experimental series, shots at peak frequencies ranging from 950 MHz to 1.45 GHz were performed. Peak amplitude modulations of the NLTL output voltage signal were found to range between 18% and 35% for the lowest frequency shots and between 5% and 20% for the highest frequency shots (higher modulation at higher Marx charge voltage). Peak amplitude modulations of the electron beam current were found to range between 10% and 20% for the lowest frequency shots and between 2% and 7% for the highest frequency shots (higher modulation at higher Marx charge voltage).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of onemore » or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.« less

Principles for system level electrochemistry

NASA Technical Reports Server (NTRS)

Thaller, L. H.

1986-01-01

The higher power and higher voltage levels anticipated for future space missions have required a careful review of the techniques currently in use to preclude battery problems that are related to the dispersion characteristics of the individual cells. Not only are the out-of-balance problems accentuated in these larger systems, but the thermal management considerations also require a greater degree of accurate design. Newer concepts which employ active cooling techniques are being developed which permit higher rates of discharge and tighter packing densities for the electrochemical components. This paper will put forward six semi-independent principles relating to battery systems. These principles will progressively address cell, battery and finally system related aspects of large electrochemical storage systems.

Low Power, High Voltage Power Supply with Fast Rise/Fall Time

NASA Technical Reports Server (NTRS)

Bearden, Douglas B. (Inventor)

2007-01-01

A low power, high voltage power supply system includes a high voltage power supply stage and a preregulator for programming the power supply stage so as to produce an output voltage which is a predetermined fraction of a desired voltage level. The power supply stage includes a high voltage, voltage doubler stage connected to receive the output voltage from the preregulator and for, when activated, providing amplification of the output voltage to the desired voltage level. A first feedback loop is connected between the output of the preregulator and an input of the preregulator while a second feedback loop is connected between the output of the power supply stage and the input of the preregulator.

Low power, high voltage power supply with fast rise/fall time

NASA Technical Reports Server (NTRS)

Bearden, Douglas B. (Inventor)

2007-01-01

A low power, high voltage power supply system includes a high voltage power supply stage and a preregulator for programming the power supply stage so as to produce an output voltage which is a predetermined fraction of a desired voltage level. The power supply stage includes a high voltage, voltage doubler stage connected to receive the output voltage from the preregulator and for, when activated, providing amplification of the output voltage to the desired voltage level. A first feedback loop is connected between the output of the preregulator and an input of the preregulator while a second feedback loop is connected between the output of the power supply stage and the input of the preregulator.

Powerplexer

NASA Technical Reports Server (NTRS)

Woods, J. M. (Inventor)

1973-01-01

An electrical power distribution system is described for use in providing different dc voltage levels. A circuit is supplied with DC voltage levels and commutates pulses for timed intervals onto a pair of distribution wires. The circuit is driven by a command generator which places pulses on the wires in a timed sequence. The pair of wires extend to voltage strippers connected to the various loads. The voltage strippers each respond to the pulse dc levels on the pair of wires and form different output voltages communicated to each load.

Method of Calculating the Correction Factors for Cable Dimensioning in Smart Grids

NASA Astrophysics Data System (ADS)

Simutkin, M.; Tuzikova, V.; Tlusty, J.; Tulsky, V.; Muller, Z.

2017-04-01

One of the main causes of overloading electrical equipment by currents of higher harmonics is the great increasing of a number of non-linear electricity power consumers. Non-sinusoidal voltages and currents affect the operation of electrical equipment, reducing its lifetime, increases the voltage and power losses in the network, reducing its capacity. There are standards that respects emissions amount of higher harmonics current that cannot provide interference limit for a safe level in power grid. The article presents a method for determining a correction factor to the long-term allowable current of the cable, which allows for this influence. Using mathematical models in the software Elcut, it was described thermal processes in the cable in case the flow of non-sinusoidal current. Developed in the article theoretical principles, methods, mathematical models allow us to calculate the correction factor to account for the effect of higher harmonics in the current spectrum for network equipment in any type of non-linear load.

Study of material properties important for an optical property modulation-based radiation detection method for positron emission tomography.

PubMed

Tao, Li; Daghighian, Henry M; Levin, Craig S

2017-01-01

We compare the performance of two detector materials, cadmium telluride (CdTe) and bismuth silicon oxide (BSO), for optical property modulation-based radiation detection method for positron emission tomography (PET), which is a potential new direction to dramatically improve the annihilation photon pair coincidence time resolution. We have shown that the induced current flow in the detector crystal resulting from ionizing radiation determines the strength of optical modulation signal. A larger resistivity is favorable for reducing the dark current (noise) in the detector crystal, and thus the higher resistivity BSO crystal has a lower (50% lower on average) noise level than CdTe. The CdTe and BSO crystals can achieve the same sensitivity under laser diode illumination at the same crystal bias voltage condition while the BSO crystal is not as sensitive to 511-keV photons as the CdTe crystal under the same crystal bias voltage. The amplitude of the modulation signal induced by 511-keV photons in BSO crystal is around 30% of that induced in CdTe crystal under the same bias condition. In addition, we have found that the optical modulation strength increases linearly with crystal bias voltage before saturation. The modulation signal with CdTe tends to saturate at bias voltages higher than 1500 V due to its lower resistivity (thus larger dark current) while the modulation signal strength with BSO still increases after 3500 V. Further increasing the bias voltage for BSO could potentially further enhance the modulation strength and thus, the sensitivity.

Voltage Preconditioning Allows Modulated Gene Expression in Neurons Using PEI-complexed siRNA

PubMed Central

Sridharan, Arati; Patel, Chetan; Muthuswamy, Jit

2013-01-01

We present here a high efficiency, high viability siRNA-delivery method using a voltage-controlled chemical transfection strategy to achieve modulated delivery of polyethylenimine (PEI) complexed with siRNA in an in vitro culture of neuro2A cells and neurons. Low voltage pulses were applied to adherent cells before the administration of PEI-siRNA complexes. Live assays of neuro2a cells transfected with fluorescently tagged siRNA showed an increase in transfection efficiency from 62 ± 14% to 98 ± 3.8% (after −1 V). In primary hippocampal neurons, transfection efficiencies were increased from 30 ± 18% to 76 ± 18% (after −1 V). Negligible or low-level transfection was observed after preconditioning at higher voltages, suggesting an inverse relationship with applied voltage. Experiments with propidium iodide ruled out the role of electroporation in the transfection of siRNAs suggesting an alternate electro-endocytotic mechanism. In addition, image analysis of preconditioned and transfected cells demonstrates siRNA uptake and loading that is tuned to preconditioning voltage levels. There is approximately a fourfold increase in siRNA loading after preconditioning at −1 V compared with the same at ±2–3 V. Modulated gene expression is demonstrated in a functional knockdown of glyceraldehyde 3-phosphate dehydrogenase (GAPDH) in neuro2A cells using siRNA. Cell density and dendritic morphological changes are also demonstrated in modulated knockdown of brain derived neurotrophic factor (BDNF) in primary hippocampal neurons. The method reported here has potential applications in the development of high-throughput screening systems for large libraries of siRNA molecules involving difficult-to-transfect cells like neurons. PMID:23531602

Voltage Preconditioning Allows Modulated Gene Expression in Neurons Using PEI-complexed siRNA.

PubMed

Sridharan, Arati; Patel, Chetan; Muthuswamy, Jit

2013-03-26

We present here a high efficiency, high viability siRNA-delivery method using a voltage-controlled chemical transfection strategy to achieve modulated delivery of polyethylenimine (PEI) complexed with siRNA in an in vitro culture of neuro2A cells and neurons. Low voltage pulses were applied to adherent cells before the administration of PEI-siRNA complexes. Live assays of neuro2a cells transfected with fluorescently tagged siRNA showed an increase in transfection efficiency from 62 ± 14% to 98 ± 3.8% (after -1 V). In primary hippocampal neurons, transfection efficiencies were increased from 30 ± 18% to 76 ± 18% (after -1 V). Negligible or low-level transfection was observed after preconditioning at higher voltages, suggesting an inverse relationship with applied voltage. Experiments with propidium iodide ruled out the role of electroporation in the transfection of siRNAs suggesting an alternate electro-endocytotic mechanism. In addition, image analysis of preconditioned and transfected cells demonstrates siRNA uptake and loading that is tuned to preconditioning voltage levels. There is approximately a fourfold increase in siRNA loading after preconditioning at -1 V compared with the same at ±2-3 V. Modulated gene expression is demonstrated in a functional knockdown of glyceraldehyde 3-phosphate dehydrogenase (GAPDH) in neuro2A cells using siRNA. Cell density and dendritic morphological changes are also demonstrated in modulated knockdown of brain derived neurotrophic factor (BDNF) in primary hippocampal neurons. The method reported here has potential applications in the development of high-throughput screening systems for large libraries of siRNA molecules involving difficult-to-transfect cells like neurons.Molecular Therapy-Nucleic Acids (2013) 2, e82; doi:10.1038/mtna.2013.10; published online 26 March 2013.

High-voltage supply for neutron tubes in well-logging applications

DOEpatents

Humphreys, D.R.

1982-09-15

A high voltage supply is provided for a neutron tube used in well logging. The biased pulse supply of the invention combines DC and full pulse techniques and produces a target voltage comprising a substantial negative DC bias component on which is superimposed a pulse whose negative peak provides the desired negative voltage level for the neutron tube. The target voltage is preferably generated using voltage doubling techniques and employing a voltage source which generates bipolar pulse pairs having an amplitude corresponding to the DC bias level.

High voltage supply for neutron tubes in well logging applications

DOEpatents

Humphreys, D. Russell

1989-01-01

A high voltage supply is provided for a neutron tube used in well logging. The "biased pulse" supply of the invention combines DC and "full pulse" techniques and produces a target voltage comprising a substantial negative DC bias component on which is superimposed a pulse whose negative peak provides the desired negative voltage level for the neutron tube. The target voltage is preferably generated using voltage doubling techniques and employing a voltage source which generates bipolar pulse pairs having an amplitude corresponding to the DC bias level.

Short-Term State Forecasting-Based Optimal Voltage Regulation in Distribution Systems: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Rui; Jiang, Huaiguang; Zhang, Yingchen

2017-05-17

A novel short-term state forecasting-based optimal power flow (OPF) approach for distribution system voltage regulation is proposed in this paper. An extreme learning machine (ELM) based state forecaster is developed to accurately predict system states (voltage magnitudes and angles) in the near future. Based on the forecast system states, a dynamically weighted three-phase AC OPF problem is formulated to minimize the voltage violations with higher penalization on buses which are forecast to have higher voltage violations in the near future. By solving the proposed OPF problem, the controllable resources in the system are optimally coordinated to alleviate the potential severemore » voltage violations and improve the overall voltage profile. The proposed approach has been tested in a 12-bus distribution system and simulation results are presented to demonstrate the performance of the proposed approach.« less

New Modulation Method and Control Strategies for Power Electronics Inverters

NASA Astrophysics Data System (ADS)

Aleenejad, Mohsen

The DC to AC power Converters (so-called Inverters) are widely used in industrial applications. The MLIs are becoming increasingly popular in industrial apparatus aimed at medium to high power conversion applications. In comparison to the conventional inverters, they feature superior characteristics such as lower total harmonic distortion (THD), higher efficiency, and lower switching voltage stress. Nevertheless, the superior characteristics come at the price of a more complex topology with an increased number of power electronic switches. The increased number of power electronics switches results in more complicated control strategies for the inverter. Moreover, as the number of power electronic switches increases, the chances of fault occurrence of the switches increases, and thus the inverter's reliability decreases. Due to the extreme monetary ramifications of the interruption of operation in commercial and industrial applications, high reliability for power inverters utilized in these sectors is critical. As a result, developing simple control strategies for normal and fault-tolerant operation of MLIs has always been an interesting topic for researchers in related areas. The purpose of this dissertation is to develop new control and fault-tolerant strategies for the multilevel power inverter. For the normal operation of the inverter, a new high switching frequency technique is developed. The proposed method extends the utilization of the dc link voltage while minimizing the dv/dt of the switches. In the event of a fault, the line voltages of the faulty inverters are unbalanced and cannot be applied to the 3-phase loads. For the faulty condition of the inverter, three novel fault-tolerant techniques are developed. The proposed fault-tolerant strategies generate balanced line voltages without bypassing any healthy and operative inverter element, makes better use of the inverter capacity and generates higher output voltage. These strategies exploit the advantages of the Selective Harmonic Elimination (SHE) and Space Vector Modulation (SVM) methods in conjunction with a slightly modified Fundamental Phase Shift Compensation (FPSC) technique to generate balanced voltages and manipulate voltage harmonics at the same time. The proposed strategies are applicable to several classes of MLIs with three or more voltage levels.

Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Hanna, Mina J.; Zhao, Han; Lee, Jack C.

2012-10-01

We analyze the anomalous I-V behavior in SiN prepared by plasma enhanced chemical vapor deposition for use as a gate insulator in AlGaN/GaN metal insulator semiconductor heterostructure filed effect transistors (HFETs). We observe leakage current across the dielectric with opposite polarity with respect to the applied electric field once the voltage sweep reaches a level below a determined threshold. This is observed as the absolute minimum of the leakage current does not occur at minimum voltage level (0 V) but occurs earlier in the sweep interval. Curve-fitting analysis suggests that the charge-transport mechanism in this region is Poole-Frenkel current, followed by Schottky emission due to band bending. Despite the current anomaly, the sample devices have shown a notable reduction of leakage current of over 2 to 6 order of magnitudes compared to the standard Schottky HFET. We show that higher pressures and higher silane concentrations produce better films manifesting less trapping. This conforms to our results that we reported in earlier publications. We found that higher chamber pressure achieves higher sheet carrier concentration that was found to be strongly dependent on the trapped space charge at the SiN/GaN interface. This would suggest that a lower chamber pressure induces more trap states into the SiN/GaN interface.

Alterations in welding process voltage affect the generation of ultrafine particles, fume composition, and pulmonary toxicity.

PubMed

Antonini, James M; Keane, Michael; Chen, Bean T; Stone, Samuel; Roberts, Jenny R; Schwegler-Berry, Diane; Andrews, Ronnee N; Frazer, David G; Sriram, Krishnan

2011-12-01

The goal was to determine if increasing welding voltage changes the physico-chemical properties of the fume and influences lung responses. Rats inhaled 40 mg/m³ (3 h/day × 3 days) of stainless steel (SS) welding fume generated at a standard voltage setting of 25 V (regular SS) or at a higher voltage (high voltage SS) of 30 V. Particle morphology, size and composition were characterized. Bronchoalveolar lavage was performed at different times after exposures to assess lung injury. Fumes collected from either of the welding conditions appeared as chain-like agglomerates of nanometer-sized primary particles. High voltage SS welding produced a greater number of ultrafine-sized particles. Fume generated by high voltage SS welding was higher in manganese. Pulmonary toxicity was more substantial and persisted longer after exposure to the regular SS fume. In summary, a modest raise in welding voltage affected fume size and elemental composition and altered the temporal lung toxicity profile.

Test methods and results of the 10-cell bipolar Ni-H2 battery

NASA Technical Reports Server (NTRS)

Cataldo, R.

1983-01-01

Characterization tests were carried out at three charge levels and four discharge levels. The "c' or capacity of the battery is designated at 6.5 ampere-hours. The recharge ampere-hours was the same for all test conditions, 6.5 A-H, regardless of the discharge capacity removed for any particular discharge rate. Less capacity can be removed at higher discharge rates to the same termination voltage, which was 0.50 volts for the weakest (lowest voltage) cell. The general trend of efficiencies increases as the charge rate increases as noted in results of the table included in the handout package. The data also indicate the efficiency increases as the discharge rate decreases. This is true; however, efficiencies at the discharge rates of c and 2c are penalized because these cycles received more overcharge than necessary.

Generation of electrical power

DOEpatents

Hursen, Thomas F.; Kolenik, Steven A.; Purdy, David L.

1976-01-01

A heat-to-electricity converter is disclosed which includes a radioactive heat source and a thermoelectric element of relatively short overall length capable of delivering a low voltage of the order of a few tenths of a volt. Such a thermoelectric element operates at a higher efficiency than longer higher-voltage elements; for example, elements producing 6 volts. In the generation of required power, thermoelectric element drives a solid-state converter which is controlled by input current rather than input voltage and operates efficiently for a high signal-plus-noise to signal ratio of current. The solid-state converter has the voltage gain necessary to deliver the required voltage at the low input of the thermoelectric element.

Annealing effects on the chemical deposited CdS films and the electrical properties of CdS/CdTe solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Junfeng; Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt; Liao, Cheng, E-mail: Cliao@pku.edu.cn

2011-02-15

Graphical abstract: From XPS core level spectras, compared with as-depositing CdS (sample A), the Fermi level is shifting closer to the conduction band after annealing treatment in the oxygen (sample B) while it is shifting closer to the valence band after annealing treatment in the argon-hydrogen (sample C). That might be the main reason of the different performance of the final devices. The open circuit voltage of the CdS/CdTe solar cell increases when the CBD CdS is annealed with oxygen, while the performance of the solar cell decreases when the CBD CdS is annealed with argon-hydrogen. Research highlights: {yields} Twomore » different methods (oxidation and reduction) were used to anneal CdS films for CdTe solar cells. {yields} Electrical properties were analyzed by XPS (Fermi levels of CdS films). {yields} Annealing treatment in oxidation atmosphere could shift Fermi level of CdS film to higher position and consequently improve the CdS/CdTe junction and performance of solar cells. -- Abstract: CdS layers grown by chemical bath deposition (CBD) are annealed in the oxygen and argon-hydrogen atmosphere respectively. It has been found that the open circuit voltage of the CdS/CdTe solar cell increases when the CBD CdS is annealed with oxygen before the deposition of CdTe by close spaced sublimation (CSS), while the performance of the solar cell decreases when the CBD CdS is annealed with argon-hydrogen. Electronic properties of the CdS films are investigated using X-ray photo-electron spectroscopy (XPS), which indicates that the Fermi level is shifting closer to the conduction band after annealing in the oxygen and consequently a higher open circuit voltage of the solar cell can be obtained.« less

The effect of cation doping on spinel LiMn 2O 4: a first-principles investigation

NASA Astrophysics Data System (ADS)

Shi, Siqi; Ouyang, Chuying; Wang, Ding-sheng; Chen, Liquan; Huang, Xuejie

2003-05-01

The effect of the cation doping on the electronic structure of spinel LiM yMn 2- yO 4 (M=Cr, Mn, Fe, Co and Ni) has been calculated by first-principles. Our calculation shows that new M-3d bands emerge in the density of states compared with that in LiMn 2O 4. Simultaneously, the new O-2p bands appear accordingly in almost the same energy range around the Fermi energy owing to the M-3d/O-2p interaction. It is found that the appearance of new O-2p bands in the lower energy position results in a higher intercalation voltage. Consequently, the origin of higher intercalation voltage in LiM yMn 2- yO 4 can be ascribed to the lower O-2p level introduced by the doping cation M.

Charging-choke circuit with a crowbar for precision control of voltage

DOEpatents

Praeg, W.F.

1975-11-25

The operation of a circuit using a charging choke to obtain dc voltages is improved by constructing the circuit to be capable of producing a higher voltage than the desired value and crowbarring the charging choke when the load voltage reaches the desired value.

Robust Control of Wide Bandgap Power Electronics Device Enabled Smart Grid

NASA Astrophysics Data System (ADS)

Yao, Tong

In recent years, wide bandgap (WBG) devices enable power converters with higher power density and higher efficiency. On the other hand, smart grid technologies are getting mature due to new battery technology and computer technology. In the near future, the two technologies will form the next generation of smart grid enabled by WBG devices. This dissertation deals with two applications: silicon carbide (SiC) device used for medium voltage level interface (7.2 kV to 240 V) and gallium nitride (GaN) device used for low voltage level interface (240 V/120 V). A 20 kW solid state transformer (SST) is designed with 6 kHz switching frequency SiC rectifier. Then three robust control design methods are proposed for each of its smart grid operation modes. In grid connected mode, a new LCL filter design method is proposed considering grid voltage THD, grid current THD and current regulation loop robust stability with respect to the grid impedance change. In grid islanded mode, micro synthesis method combined with variable structure control is used to design a robust controller for grid voltage regulation. For grid emergency mode, multivariable controller designed using Hinfinity synthesis method is proposed for accurate power sharing. Controller-hardware-in-the-loop (CHIL) testbed considering 7-SST system is setup with Real Time Digital Simulator (RTDS). The real TMS320F28335 DSP and Spartan 6 FPGA control board is used to interface a switching model SST in RTDS. And the proposed control methods are tested. For low voltage level application, a 3.3 kW smart grid hardware is built with 3 GaN inverters. The inverters are designed with the GaN device characterized using the proposed multi-function double pulse tester. The inverter is controlled by onboard TMS320F28379D dual core DSP with 200 kHz sampling frequency. Each inverter is tested to process 2.2 kW power with overall efficiency of 96.5 % at room temperature. The smart grid monitor system and fault interrupt devices (FID) based on Arduino Mega2560 are built and tested. The smart grid cooperates with GaN inverters through CAN bus communication. At last, the three GaN inverters smart grid achieved the function of grid connected to islanded mode smooth transition.

Two new families of high-gain dc-dc power electronic converters for dc-microgrids

NASA Astrophysics Data System (ADS)

Prabhala, Venkata Anand Kishore

Distributing the electric power in dc form is an appealing solution in many applications such as telecommunications, data centers, commercial buildings, and microgrids. A high gain dc-dc power electronic converter can be used to individually link low-voltage elements such as solar panels, fuel cells, and batteries to the dc voltage bus which is usually 400 volts. This way, it is not required to put such elements in a series string to build up their voltages. Consequently, each element can function at it optimal operating point regardless of the other elements in the system. In this dissertation, first a comparative study of dc microgrid architectures and their advantages over their ac counterparts is presented. Voltage level selection of dc distribution systems is discussed from the cost, reliability, efficiency, and safety standpoints. Next, a new family of non-isolated high-voltage-gain dc-dc power electronic converters with unidirectional power flow is introduced. This family of converters benefits from a low voltage stress across its switches. The proposed topologies are versatile as they can be utilized as single-input or double-input power converters. In either case, they draw continuous currents from their sources. Lastly, a bidirectional high-voltage-gain dc-dc power electronic converter is proposed. This converter is comprised of a bidirectional boost converter which feeds a switched-capacitor architecture. The switched-capacitor stage suggested here has several advantages over the existing approaches. For example, it benefits from a higher voltage gain while it uses less number of capacitors. The proposed converters are highly efficient and modular. The operating modes, dc voltage gain, and design procedure for each converter are discussed in details. Hardware prototypes have been developed in the lab. The results obtained from the hardware agree with those of the simulation models.

Dynamic characteristics of corona discharge generated under rainfall condition on AC charged conductors

NASA Astrophysics Data System (ADS)

Xu, Pengfei; Zhang, Bo; Wang, Zezhong; Chen, Shuiming; He, Jinliang

2017-12-01

By synchronous measurement of corona current and the water droplet deformation process on a conductor surface, different types of corona discharge are visualized when AC voltage is applied on a line-ground electrode system. The corona characteristics are closely related to the applied voltage and water supply rate. With the increase of AC voltage, the positive Taylor cone discharge firstly appears and then disappears, replaced by the dripping and crashing discharge. Furthermore, the number of pulses in each pulse train increases with the increase of applied voltage. The mechanism of the transfer from the positive Taylor cone discharge to the dripping and crashing discharge is found to be related to the oscillation process of the water droplet. The water supply rate also has a great influence on the characteristics of corona currents. The number of positive pulse trains increases linearly when the water supply rate gets larger, leading to a higher audible noise and radio interference level from the AC corona, which is quite different from that of the DC corona. The difference between the AC and DC coronas under rainfall conditions is analyzed finally.

Ground difference compensating system

DOEpatents

Johnson, Kris W.; Akasam, Sivaprasad

2005-10-25

A method of ground level compensation includes measuring a voltage of at least one signal with respect to a primary ground potential and measuring, with respect to the primary ground potential, a voltage level associated with a secondary ground potential. A difference between the voltage level associated with the secondary ground potential and an expected value is calculated. The measured voltage of the at least one signal is adjusted by an amount corresponding to the calculated difference.

The Rated Voltage Determination of DC Building Power Supply System Considering Human Beings Safety

NASA Astrophysics Data System (ADS)

Wang, Zhicheng; Yu, Kansheng; Xie, Guoqiang; Zou, Jin

2018-01-01

Generally two-level voltages are adopted for DC building power supply system. From the point of view of human beings safety, only the lower level voltage which may be contacted barehanded is discussed in this paper based on the related safety thresholds of human beings current effect. For several voltage levels below 100V recommended by IEC, the body current and current density of human electric shock under device normal work condition, as well as effect of unidirectional single impulse currents of short durations are calculated and analyzed respectively. Finally, DC 60V is recommended as the lower level rating voltage through the comprehensive consideration of technical condition and cost of safety criteria.

Radiation dose reduction in abdominal computed tomography during the late hepatic arterial phase using a model-based iterative reconstruction algorithm: how low can we go?

PubMed

Husarik, Daniela B; Marin, Daniele; Samei, Ehsan; Richard, Samuel; Chen, Baiyu; Jaffe, Tracy A; Bashir, Mustafa R; Nelson, Rendon C

2012-08-01

The aim of this study was to compare the image quality of abdominal computed tomography scans in an anthropomorphic phantom acquired at different radiation dose levels where each raw data set is reconstructed with both a standard convolution filtered back projection (FBP) and a full model-based iterative reconstruction (MBIR) algorithm. An anthropomorphic phantom in 3 sizes was used with a custom-built liver insert simulating late hepatic arterial enhancement and containing hypervascular liver lesions of various sizes. Imaging was performed on a 64-section multidetector-row computed tomography scanner (Discovery CT750 HD; GE Healthcare, Waukesha, WI) at 3 different tube voltages for each patient size and 5 incrementally decreasing tube current-time products for each tube voltage. Quantitative analysis consisted of contrast-to-noise ratio calculations and image noise assessment. Qualitative image analysis was performed by 3 independent radiologists rating subjective image quality and lesion conspicuity. Contrast-to-noise ratio was significantly higher and mean image noise was significantly lower on MBIR images than on FBP images in all patient sizes, at all tube voltage settings, and all radiation dose levels (P < 0.05). Overall image quality and lesion conspicuity were rated higher for MBIR images compared with FBP images at all radiation dose levels. Image quality and lesion conspicuity on 25% to 50% dose MBIR images were rated equal to full-dose FBP images. This phantom study suggests that depending on patient size, clinically acceptable image quality of the liver in the late hepatic arterial phase can be achieved with MBIR at approximately 50% lower radiation dose compared with FBP.

Elevating the triplet energy levels of dibenzofuran-based ambipolar phosphine oxide hosts for ultralow-voltage-driven efficient blue electrophosphorescence: from D-A to D-π-A systems.

PubMed

Han, Chunmiao; Zhang, Zhensong; Xu, Hui; Li, Jing; Zhao, Yi; Yan, Pengfei; Liu, Shiyong

2013-01-21

A series of donor (D)-π-acceptor (A)-type phosphine-oxide hosts (DBF(x) POPhCz(n)), which were composed of phenylcarbazole, dibenzofuran (DBF), and diphenylphosphine-oxide (DPPO) moieties, were designed and synthesized. Phenyl π-spacer groups were inserted between the carbazolyl and DBF groups, which effectively weakened the charge transfer and triplet-excited-state extension. As the result, the first triplet energy levels (T(1)) of DBF(x)POPhCz(n) are elevated to about 3.0 eV, 0.1 eV higher than their D-A-type analogues. Nevertheless, the electrochemical analysis and DFT calculations demonstrated the ambipolar characteristics of DBF(x)POPhCz(n). The phenyl π spacers hardly influenced the frontier molecular orbital (FMO) energy levels and the carrier-transporting ability of the materials. Therefore, these D-π-A systems are endowed with higher T(1) states, as well as comparable electrical properties to D-A systems. Phosphorescent blue-light-emitting diodes (PHOLEDs) that were based on DBF(x)POPhCz(n) not only inherited the ultralow driving voltages (2.4 V for onset, about 2.8 V at 200 cd m(-2), and <3.4 V at 1000 cd m(-2)) but also had much-improved efficiencies, including about 26 cd A(-1) for current efficiency, 30 Lm W(-1) for power efficiency, and 13% for external quantum efficiency, which were more than twice the values of devices that are based on conventional unipolar host materials. This performance makes DBFDPOPhCz(n) among the best hosts for ultralow-voltage-driven blue PHOLEDs reported so far. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Probing of barrier induced deviations in current-voltage characteristics of polymer devices by impedance spectroscopy

NASA Astrophysics Data System (ADS)

Khan, Motiur Rahman; Rao, K. S. R. Koteswara; Menon, R.

2017-05-01

Temperature dependent current-voltage measurements have been performed on poly(3-methylthiophene) based devices in metal/polymer/metal geometry in temperature range 90-300 K. Space charge limited current (SCLC) controlled by exponentially distributed traps is observed at all the measured temperatures at intermediate voltage range. At higher voltages, trap-free SCLC is observed at 90 K only while slope less than 2 is observed at higher temperatures which is quiet unusual in polymer devices. Impedance measurements were performed at different bias voltages. The unusual behavior observed in current-voltage characteristics is explained by Cole-Cole plot which gives the signature of interface dipole on electrode/polymer interface. Two relaxation mechanisms are obtained from the real part of impedance vs frequency spectra which confirms the interface related phenomena in the device

Temporal development and chemical efficiency of positive streamers in a large scale wire-plate reactor as a function of voltage waveform parameters

NASA Astrophysics Data System (ADS)

Winands, G. J. J.; Liu, Z.; Pemen, A. J. M.; van Heesch, E. J. M.; Yan, K.; van Veldhuizen, E. M.

2006-07-01

In this paper a large-scale pulsed corona system is described in which pulse parameters such as pulse rise-time, peak voltage, pulse width and energy per pulse can be varied. The chemical efficiency of the system is determined by measuring ozone production. The temporal and spatial development of the discharge streamers is recorded using an ICCD camera with a shortest exposure time of 5 ns. The camera can be triggered at any moment starting from the time the voltage pulse arrives on the reactor, with an accuracy of less than 1 ns. Measurements were performed on an industrial size wire-plate reactor. The influence of pulse parameters like pulse voltage, DC bias voltage, rise-time and pulse repetition rate on plasma generation was monitored. It was observed that for higher peak voltages, an increase could be seen in the primary streamer velocity, the growth of the primary streamer diameter, the light intensity and the number of streamers per unit length of corona wire. No significant separate influence of DC bias voltage level was observed as long as the total reactor voltage (pulse + DC bias) remained constant and the DC bias voltage remained below the DC corona onset. For those situations in which the plasma appearance changed (e.g. different streamer velocity, diameter, intensity), a change in ozone production was also observed. The best chemical yields were obtained for low voltage (55 kV), low energetic pulses (0.4 J/pulse): 60 g (kWh)-1. For high voltage (86 kV), high energetic pulses (2.3 J/pulse) the yield decreased to approximately 45 g (kWh)-1, still a high value for ozone production in ambient air (RH 42%). The pulse repetition rate has no influence on plasma generation and on chemical efficiency up to 400 pulses per second.

Genotypic to expression profiling of bovine calcium channel, voltage-dependent, alpha-2/delta subunit 1 gene, and their association with bovine mastitis among Frieswal (HFX Sahiwal) crossbred cattle of Indian origin.

PubMed

Deb, Rajib; Singh, Umesh; Kumar, Sushil; Kumar, Arun; Singh, Rani; Sengar, Gyanendra; Mann, Sandeep; Sharma, Arjava

2014-04-03

Calcium channel, voltage-dependent, alpha-2/delta subunit 1 (CACNA2D1) gene is considered to be an important noncytokine candidate gene influencing mastitis. Scanty of reports are available until today regarding the role play of CACNA2D1 gene on the susceptibility of bovine mastitis. We interrogated the CACNA2D1 G519663A [A>G] SNP by PCR-RFLP among two hundreds Frieswal (HF X Sahiwal) crossbred cattle of Indian origin. Genotypic frequency of AA (51.5, n=101) was comparatively higher than AG (35, n=70) and GG (14.5, n=29). Association of Somatic cell score (SCS) with genotypes revealed that, GG genotypes showing lesser count (less susceptible to mastitis) compare to AA and AG. Relative expression of CACNA2D1 transcript (in milk samples) was significantly higher among GG than AG and AA. Further we have also isolated blood sample from the all groups and PBMCs were cultured from each blood sample as per the standard protocol. They were treated with Calcium channel blocker and the expression level of the CACNA2D1 gene was evaluated by Real Time PCR. Results show that expression level decline in each genotypic group after treatment and expression level of GG are again significantly higher than AA and AG. Thus, it may be concluded that GG genotypic animals are favorable for selecting disease resistant breeds.

Design of Edible Oil Degradation Tool by Using Electromagnetic Field Absorbtion Principle which was Characterized to Peroxide Number

NASA Astrophysics Data System (ADS)

Isnen, M.; Nasution, T. I.; Perangin-angin, B.

2016-08-01

The identification of changes in oil quality has been conducted by indicating the change of dielectric constant which was showed by sensor voltage. Sensor was formed from two parallel flats that worked by electromagnetic wave propagation principle. By measuring its amplitude of electromagnetic wave attenuation caused by interaction between edible oil samples and the sensor, dielectric constant could be identified and estimated as well as peroxide number. In this case, the parallel flats were connected to an electric oscillator 700 kHz. Furthermore, sensor system could showed measurable voltage differences for each different samples. The testing carried out to five oil samples after undergoing an oxidation treatment at fix temperature of 235oC for 0, 5, 10, 15 and 20 minutes. Iodometry method testing showed peroxide values about 1.99, 9.95, 5.96, 11.86, and 15.92 meq/kg respectively with rising trend. Besides that, the testing result by sensor system showed voltages values 1.139, 1.147, 1.165, 1.173, and 1.176 volts with rising trend, respectively. It means that the higher sensor voltages showed the higher damage rate of edible oil when the change in sensor voltage was caused by the change in oil dielectric constant in which heating process caused damage in edible oil molecules structure. The more damage of oil structure caused the more difficulties of oil molecules to polarize and it is indicated by smaller dielectric constant. Therefore electric current would be smaller when sensor voltage was higher. On the other side, the higher sensor voltage means the smaller dielectric constant and the higher peroxide number.

Measurement and statistical analysis of single-molecule current-voltage characteristics, transition voltage spectroscopy, and tunneling barrier height.

PubMed

Guo, Shaoyin; Hihath, Joshua; Díez-Pérez, Ismael; Tao, Nongjian

2011-11-30

We report on the measurement and statistical study of thousands of current-voltage characteristics and transition voltage spectra (TVS) of single-molecule junctions with different contact geometries that are rapidly acquired using a new break junction method at room temperature. This capability allows one to obtain current-voltage, conductance voltage, and transition voltage histograms, thus adding a new dimension to the previous conductance histogram analysis at a fixed low-bias voltage for single molecules. This method confirms the low-bias conductance values of alkanedithiols and biphenyldithiol reported in literature. However, at high biases the current shows large nonlinearity and asymmetry, and TVS allows for the determination of a critically important parameter, the tunneling barrier height or energy level alignment between the molecule and the electrodes of single-molecule junctions. The energy level alignment is found to depend on the molecule and also on the contact geometry, revealing the role of contact geometry in both the contact resistance and energy level alignment of a molecular junction. Detailed statistical analysis further reveals that, despite the dependence of the energy level alignment on contact geometry, the variation in single-molecule conductance is primarily due to contact resistance rather than variations in the energy level alignment.

Optically Tuned MM-Wave IMPATT Source.

DTIC Science & Technology

1987-07-01

phase of the work has been extended and generalised. Accuracy of the theory in predicting tuning at the higher oscillator voltage swings has been greatly...Accuracy of the theory in predicting tuning at the higher oscillator voltage swings has been greatly improved by reformulating the Bessel function...voltage modulation and a peak optically injected locking current of 100 pA the predicted ftl locking range would be 540MHz, a practicaUy useful value. 4

Characterization system for research on energy storage capacitors.

PubMed

Noriega, J R; Iyore, O D; Budime, C; Gnade, B; Vasselli, J

2013-05-01

In this work a characterization system for high energy-density capacitors is described and demonstrated. Capacitors are being designed using thin-film technology in an attempt to achieve higher energy-density levels by operating the devices at a high voltage. These devices are fabricated from layers of 100 nm aluminum and a layer of polyvinylidene fluoride-hexafluoropropylene on a polyethylene naphthalate plastic substrate. The devices have been designed to store electrical charge at up to 200 V. Characterizations of these devices focus on the measurement of capacitance vs bias voltage and temperature, equivalent series resistance, and charge/discharge cycles. For the purpose of the characterization of these capacitors, an electronic charge/discharge interface was designed and tested.

Impute DC link (IDCL) cell based power converters and control thereof

DOEpatents

Divan, Deepakraj M.; Prasai, Anish; Hernendez, Jorge; Moghe, Rohit; Iyer, Amrit; Kandula, Rajendra Prasad

2016-04-26

Power flow controllers based on Imputed DC Link (IDCL) cells are provided. The IDCL cell is a self-contained power electronic building block (PEBB). The IDCL cell may be stacked in series and parallel to achieve power flow control at higher voltage and current levels. Each IDCL cell may comprise a gate drive, a voltage sharing module, and a thermal management component in order to facilitate easy integration of the cell into a variety of applications. By providing direct AC conversion, the IDCL cell based AC/AC converters reduce device count, eliminate the use of electrolytic capacitors that have life and reliability issues, and improve system efficiency compared with similarly rated back-to-back inverter system.

Dimensional optimization of nanowire--complementary metal oxide--semiconductor inverter.

PubMed

Hashim, Yasir; Sidek, Othman

2013-01-01

This study is the first to demonstrate dimensional optimization of nanowire-complementary metal-oxide-semiconductor inverter. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. Results indicate that optimization depends on both dimensions ratio and digital voltage level (Vdd). Diameter optimization reveals that when Vdd increases, the optimized value of (Dp/Dn) decreases. Channel length optimization results show that when Vdd increases, the optimized value of Ln decreases and that of (Lp/Ln) increases. Dimension ratio optimization reveals that when Vdd increases, the optimized value of Kp/Kn decreases, and silicon nanowire transistor with suitable dimensions (higher Dp and Ln with lower Lp and Dn) can be fabricated.

Performance analysis of cascaded h-bridge multilevel inverter using mixed switching frequency with various dc-link voltages

NASA Astrophysics Data System (ADS)

Citarsa, I. B. F.; Satiawan, I. N. W.; Wiryajati, I. K.; Supriono

2016-01-01

Multilevel inverters have been widely used in many applications since the technology is advantageous to increase the converter capability as well as to improve the output voltage quality. According to the applied switching frequency, multilevel modulations can be subdivided into three classes, i.e: fundamental switching frequency, high switching frequency and mixed switching frequency. This paper investigates the performance of cascaded H-bridge (CHB) multilevel inverter that is modulated using mixed switching frequency (MSF) PWM with various dc-link voltage ratios. The simulation results show the nearly sinusoidal load output voltages are successfully achieved. It is revealed that there is improvement in output voltages quality in terms of THD and low-order harmonics content. The CHB inverter that is modulated using MSF PWM with equal dc-link voltage ratio (½ Vdc: ½ Vdc) produces output voltage with the lowest low-order harmonics (less than 1% of fundamental) while the CHB inverter that is modulated using MSF PWM with un-equal dc-link voltage ratio (2/3 Vdc: 1/3 Vdc) produces a 7-level output voltage with the lowest THD (16.31%) compared to the other PWM methods. Improvement of the output voltage quality here is also in line with improvement of the number of available levels provided in the output voltage. Here only 2 cells H-bridge inverter (contain 8 switches) are needed to produce a 7- level output voltage, while in the conventional CHB inverter at least 3 cells of H-bridge inverter (contain 12 switches) are needed to produce a 7-level output voltage. Hence it is valuable in term of saving number of component.

Effects of Nb doping level on the electronic transport, photoelectric effect and magnetoresistance across La0.5Ca0.5MnO3/Nb:SrTiO3 junctions

NASA Astrophysics Data System (ADS)

Wang, J. F.; Jiang, Y. C.; Chen, M. G.; Gao, J.

2013-12-01

Heterojunctions composed of La0.5Ca0.5MnO3 and Nb doped SrTiO3 were fabricated, and the effects of the Nb doping level on their electronic transport, photoelectric effect, and magnetoresistance were investigated. A lower doping concentration of Nb led to better rectifying properties and higher open circuit voltages. The I-V curves for La0.5Ca0.5MnO3/0.7 wt. % Nb-SrTiO3 showed a negligible response to magnetic fields for all temperatures, whereas La0.5Ca0.5MnO3/0.05 wt. % Nb-SrTiO3 exhibited distinct magnetoresistance, which depended on both the bias voltage and temperature. These results are discussed with the assistance of conventional semiconductor theories.

Two-dimensional modelling of internal arc effects in an enclosed MV cell provided with a protection porous filter

NASA Astrophysics Data System (ADS)

Rochette, D.; Clain, S.; André, P.; Bussière, W.; Gentils, F.

2007-05-01

Medium voltage (MV) cells have to respect standards (for example IEC ones (IEC TC 17C 2003 IEC 62271-200 High Voltage Switchgear and Controlgear—Part 200 1st edn)) that define security levels against internal arc faults such as an accidental electrical arc occurring in the apparatus. New protection filters based on porous materials are developed to provide better energy absorption properties and a higher protection level for people. To study the filter behaviour during a major electrical accident, a two-dimensional model is proposed. The main point is the use of a dedicated numerical scheme for a non-conservative hyperbolic problem. We present a numerical simulation of the process during the first 0.2 s when the safety valve bursts and we compare the numerical results with tests carried out in a high power test laboratory on real electrical apparatus.

Design and dSpace interfacing of current fed high gain dc to dc boost converter for low voltage applications

NASA Astrophysics Data System (ADS)

Mukhopadhyay, Debraj; Das, Subhrajit; Arunkumar, G.; Elangovan, D.; Ragunath, G.

2017-11-01

In this paper a current fed interleaved DC - DC boost converter which has an isolated topology and used for high voltage step up is proposed. A basic DC to DC boost converter converts uncontrolled DC voltage into controlled DC voltage of higher magnitude. Whereas this topology has the advantages of lower input current ripple, lesser output voltage, lesser stress on switches, faster transient response, improved reliability and much lesser electromagnetic emission over the conventional DC to DC boost converter. Most important benefit of this interleaved DC to DC boost converter is much higher efficiency. The input current is divided into two paths, substantially ohmic loss (I2R) and inductor ac loss gets reduced and finally the system achieves much higher efficiency. With recent mandates on energy saving interleaved DC to DC boost converter may be used as a very powerful tool to maintain good power density keeping the input current manageable. Higher efficiency also allows higher switching frequency and as a result the topology becomes more compact and cost friendly. The proposed topology boosts 48v DC to 200 V DC. Switching frequency is 100 kHz and PSIM 9.1 Platform has been used for the simulation.

The simulation on diode-clamped five-level converters common-mode voltage suppression with zero-vector PWM strategy

NASA Astrophysics Data System (ADS)

Zhang, Yonggao; Gao, Yanli; Long, Lizhong

2012-04-01

More and more researchers have great concern on the issue of Common-mode voltage (CMV) in high voltage large power converter. A novel common-mode voltage suppression scheme based on zero-vector PWM strategy (ZVPWM) is present in this paper. Taking a diode-clamped five-level converter as example, the principle of zero vector PWM common-mode voltage (ZCMVPWM) suppression method is studied in detail. ZCMVPWM suppression strategy is including four important parts, which are locating the sector of reference voltage vector, locating the small triangular sub-sector of reference voltage vector, reference vector synthesis, and calculating the operating time of vector. The principles of four important pars are illustrated in detail and the corresponding MATLAB models are established. System simulation and experimental results are provided. It gives some consultation value for the development and research of multi-level converters.

Adjustable electronic load-alarm relay

DOEpatents

Mason, Charles H.; Sitton, Roy S.

1976-01-01

This invention is an improved electronic alarm relay for monitoring the current drawn by an AC motor or other electrical load. The circuit is designed to measure the load with high accuracy and to have excellent alarm repeatability. Chattering and arcing of the relay contacts are minimal. The operator can adjust the set point easily and can re-set both the high and the low alarm points by means of one simple adjustment. The relay includes means for generating a signal voltage proportional to the motor current. In a preferred form of the invention a first operational amplifier is provided to generate a first constant reference voltage which is higher than a preselected value of the signal voltage. A second operational amplifier is provided to generate a second constant reference voltage which is lower than the aforementioned preselected value of the signal voltage. A circuit comprising a first resistor serially connected to a second resistor is connected across the outputs of the first and second amplifiers, and the junction of the two resistors is connected to the inverting terminal of the second amplifier. Means are provided to compare the aforementioned signal voltage with both the first and second reference voltages and to actuate an alarm if the signal voltage is higher than the first reference voltage or lower than the second reference voltage.

Dose profile variation with voltage in head CT scans using radiochromic films

NASA Astrophysics Data System (ADS)

Mourão, A. P.; Alonso, T. C.; DaSilva, T. A.

2014-02-01

The voltage source used in an X-ray tube is an important part of defining the generated beam spectrum energy profile. The X-ray spectrum energy defines the X-ray beam absorption as well as the characteristics of the energy deposition in an irradiated object. Although CT scanners allow one to choose between four different voltage values, most of them employ a voltage of 120 kV in their scanning protocols, regardless of the patient characteristics. Based on this fact, this work investigated the deposited dose in a polymethyl methacrylate (PMMA) cylindrical head phantom. The entire volume was irradiated twice. Two CT scanning protocols were used with two different voltage values: 100 and 120 kV. The phantom volume was irradiated, and radiochromic films were employed to record dose profiles. Measurements were conducted with a calibrated pencil ionization chamber, which was positioned in the center and in four peripheral bores of the head PMMA phantom, to calibrate the radiochromic films. The central slice was then irradiated. This procedure allowed us to find the conversion factors necessary to obtain dose values recorded in the films. The data obtained allowed us to observe the dose variation profile inside the phantom head as well as in the peripheral and central regions. The peripheral region showed higher dose values than those of the central region for scans using both voltage values: approximately 31% higher for scanning with 120 kV and 25% higher with 100 kV. Doses recorded with the highest voltage are significantly higher, approximately 50% higher in the peripheral region and 40% higher in the central region. A longitudinal variation could be observed, and the maximum dose was recorded at the peripheral region, at the midpoint of the longitudinal axis. The obtained results will most likely contribute to the dissemination of proper procedure as well as to optimize dosimetry and tests of quality control in CT because the choice of protocols with different voltage values can be a way to optimize the CT scans.

Synthesis and properties of hydroxyapatite-containing coating on AZ31 magnesium alloy by micro-arc oxidation

NASA Astrophysics Data System (ADS)

Tang, Hui; Han, Yu; Wu, Tao; Tao, Wei; Jian, Xian; Wu, Yunfeng; Xu, Fangjun

2017-04-01

In this study, hydroxyapatite-containing coatings were prepared by microarc oxidation on AZ31 magnesium alloy surface to improve its biodegradation performance. Five applied voltages were chosen to prepare the MAO coatings. The results demonstrate that the number of micropores in the films increases but their dimensions decrease after higher voltage is applied. As the surface roughness of the MAO coatings increases with the applied voltage, the wettability of the coatings improves continuously. The MAO coatings were mainly composed of magnesium oxide (MgO) and hydroxyapatite. The amount of hydroxyapatite phase increased with increasing voltage that was applied. The bonding strength became slightly weaker after a higher voltage was applied. But the bonding strengths of all the coatings were consistently higher than 37 MPa, which met the requirement of implant biomaterials. All coatings exhibited higher corrosion resistances and lower hydrogen evolution rate than the bare AZ31 Mg substrate, implying that the degradation rate of the AZ31 Mg alloy was enhanced by the hydroxyapatite-containing coatings. The results indicate that the present treatment of applying hydroxyapatite-containing coatings is a promising technique for the degradable Mg-based biomaterials for orthopedic applications.

Origin of negative resistance in anion migration controlled resistive memory

NASA Astrophysics Data System (ADS)

Banerjee, Writam; Wu, Facai; Hu, Yuan; Wu, Quantan; Wu, Zuheng; Liu, Qi; Liu, Ming

2018-03-01

Resistive random access memory (RRAM) is one of the most promising emerging nonvolatile technologies for the futuristic memory devices. Resistive switching behavior often shows negative resistance (NR), either voltage controlled or current controlled. In this work, the origin of a current compliance dependent voltage controlled NR effect during the resetting of anion migration based RRAM devices is discussed. The N-type voltage controlled NR is a high field driven phenomena. The current conduction within the range of a certain negative voltage is mostly dominated by space charge limited current. But with the higher negative voltage, a field induced tunneling effect is generated in the NR region. The voltage controlled NR is strongly dependent on the compliance current. The area independent behavior indicates the filamentary switching. The peak to valley ratio (PVR) is > 5. The variation of PVR as a function of the conduction band offset is achieved. Compared to other reported works, based on the PVR, it is possible to distinguish the RRAM types. Generally, due to the higher electric field effect on the metallic bridge during RESET, the electrochemical metallization type RRAM shows much higher PVR than the valance change type RRAM.

A Safe and Interactive Method of Illuminating Discharge Tubes for Studying Emission Spectra

ERIC Educational Resources Information Center

Lu, Zhe

2012-01-01

Discharge tubes are useful tools for teaching emission spectra and the discrete energy levels of the Bohr model. A new setup uses a plasma globe to illuminate the discharge tube and allows a higher degree of interactivity owing to the omission of a traditional, high-voltage power source. The decreased power consumption also reduces the heating of…

SDVSRM - a new SSRM based technique featuring dynamically adjusted, scanner synchronized sample voltages for measurement of actively operated devices.

PubMed

Doering, Stefan; Wachowiak, Andre; Roetz, Hagen; Eckl, Stefan; Mikolajick, Thomas

2018-06-01

Scanning spreading resistance microscopy (SSRM) with its high spatial resolution and high dynamic signal range is a powerful tool for two-dimensional characterization of semiconductor dopant areas. However, the application of the method is limited to devices in equilibrium condition, as the investigation of actively operated devices would imply potential differences within the device, whereas SSRM relies on a constant voltage difference between sample surface and probe tip. Furthermore, the standard preparation includes short circuiting of all device components, limiting applications to devices in equilibrium condition. In this work scanning dynamic voltage spreading resistance microscopy (SDVSRM), a new SSRM based two pass atomic force microscopy (AFM) technique is introduced, overcoming these limitations. Instead of short circuiting the samples during preparation, wire bond devices are used allowing for active control of the individual device components. SDVSRM consists of two passes. In the first pass the local sample surface voltage dependent on the dc biases applied to the components of the actively driven device is measured as in scanning voltage microscopy (SVM). The local spreading resistance is measured within the second pass, in which the afore obtained local surface voltage is used to dynamically adjust the terminal voltages of the device under test. This is done in a way that the local potential difference across the nano-electrical contact matches the software set SSRM measurement voltage, and at the same time, the internal voltage differences within the device under test are maintained. In this work the proof of the concept could be demonstrated by obtaining spreading resistance data of an actively driven photodiode test device. SDVSRM adds a higher level of flexibility in general to SSRM, as occurring differences in cross section surface voltage are taken into account. These differences are immanent for actively driven devices, but can also be present at standard, short circuited samples. Therefore, SDVSRM could improve the characterization under equilibrium conditions as well. Copyright © 2018. Published by Elsevier B.V.

Effects of humidity during formation of zinc oxide electron contact layers from a diethylzinc precursor solution

DOE PAGES

Mauger, Scott A.; Steirer, K. Xerxes; Boe, Jonas; ...

2016-01-19

Here, this work focuses on the role of humidity in the formation of ZnO thin films from a reactive diethylzinc precursor solution for use as the electron contact layer (ECL) in organic photovoltaic (OPV) devices. This method is well suited for flexible devices because the films are annealed at 120 °C, making the process compatible with polymer substrates. ZnO films were prepared by spin coating and annealing at different relative humidity (RH) levels. It is found that RH during coating and annealing affects the chemical and physical properties of the ZnO films. Using x-ray photoelectron spectroscopy it is found thatmore » increasing RH during the formation steps produces a more stoichiometric oxide and a higher Zn/O ratio. Spectroscopic ellipsometry data shows a small decrease in the optical band gap with increased humidity, consistent with a more stoichiometric oxide. Kelvin probe measurements show that increased RH during formation results in a larger work function (i.e. further from vacuum). Consistent with these data, but counter to what might be expected, when these ZnO films are used as ECLs in OPV devices those with ZnO ECLs processed in low RH (less stoichiometric) had higher power conversion efficiency than those with high-RH processed ZnO due to improved open-circuit voltage. The increase in open-circuit voltage with decreasing humidity was observed with two different donor polymers and fullerene acceptors, which shows the trend is due to changes in ZnO. The observed changes in open-circuit voltage follow the same trend as the ZnO work function indicating that the increase in open-circuit voltage with decreasing humidity is the result of improved energetics at the interface between the bulk-heterojunction and the ZnO layer due to a vacuum level shift.« less

46 CFR 111.05-1 - Purpose.

Code of Federal Regulations, 2011 CFR

2011-10-01

... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

46 CFR 111.05-1 - Purpose.

Code of Federal Regulations, 2010 CFR

2010-10-01

... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

46 CFR 111.05-1 - Purpose.

Code of Federal Regulations, 2012 CFR

2012-10-01

... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

46 CFR 111.05-1 - Purpose.

Code of Federal Regulations, 2014 CFR

2014-10-01

... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

46 CFR 111.05-1 - Purpose.

Code of Federal Regulations, 2013 CFR

2013-10-01

... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

Development of Multi-Functional Voltage Restore System

NASA Astrophysics Data System (ADS)

Suzuki, Satoshi; Ueda, Yoshinobu; Koganezawa, Takehisa; Ogihara, Yoshinori; Mori, Kenjiro; Fukazu, Naoaki

Recently, with the dawn of the electric deregulation, the installation of distributed generation with power electronics device has grown. This current causes a greater concern of power quality, primarily voltage disturbance for power companies, and their interest in power quality is peaking. Utilities are also interested in keeping their customers satisfied, as well as keeping them on-line and creating more revenue for the utility. As a countermeasure against the above surroundings, a variety type of devices based on power electronics has been developed to protect customers' load from power line voltage disturbance. One of them is the series type voltage restore. The series device is an active device, designed to provide a pure sinusoidal load voltage at all times, correcting voltage disturbance. Series type device compensates for voltage anomalies by inserting the ‘missing’ voltage onto the line through insertion transformer and inverter. This paper shows the setting guideline of target level to compensate voltage disturbance, that is, voltage dip, voltage harmonics, voltage imbalance and voltage flicker, and the design approach of the prototype of series voltage restores to accomplish the required compensation level. The prototype system gives satisfactory compensation performance through evaluation tests, which confirm the validity and effectiveness of the system.

Enhanced Control for Local Helicity Injection on the Pegasus ST

NASA Astrophysics Data System (ADS)

Pierren, C.; Bongard, M. W.; Fonck, R. J.; Lewicki, B. T.; Perry, J. M.

2017-10-01

Local helicity injection (LHI) experiments on Pegasus rely upon programmable control of a 250 MVA modular power supply system that drives the electromagnets and helicity injection systems. Precise control of the central solenoid is critical to experimental campaigns that test the LHI Taylor relaxation limit and the coupling efficiency of LHI-produced plasmas to Ohmic current drive. Enhancement and expansion of the present control system is underway using field programmable gate array (FPGA) technology for digital logic and control, coupled to new 10 MHz optical-to-digital transceivers for semiconductor level device communication. The system accepts optical command signals from existing analog feedback controllers, transmits them to multiple devices in parallel H-bridges, and aggregates their status signals for fault detection. Present device-level multiplexing/de-multiplexing and protection logic is extended to include bridge-level protections with the FPGA. An input command filter protects against erroneous and/or spurious noise generated commands that could otherwise cause device failures. Fault registration and response times with the FPGA system are 25 ns. Initial system testing indicates an increased immunity to power supply induced noise, enabling plasma operations at higher working capacitor bank voltage. This can increase the applied helicity injection drive voltage, enable longer pulse lengths and improve Ohmic loop voltage control. Work supported by US DOE Grant DE-FG02-96ER54375.

Temperature characteristics of silicon space solar cells and underlying parameters

NASA Technical Reports Server (NTRS)

Anspaugh, B. E.; Kachare, Ram; Garlick, G. F. J.

1987-01-01

Silicon space cells, 2 cm x 2 cm, with 10 ohm-cm p-base resistivity, 8-mil base thickness, and no back-surface fields have been investigated over the temperature range from 301 to 223 K by measurements of dark forward and reverse current-voltage characteristics and current-voltage relations under illumination. From dark forward bias data, the first and second diode saturation currents, I01 and I02, are determined and hence the base diffusion length and lifetime of minority carriers as functions of temperature. Lifetime increases exponentially with temperature and is explained by a Shockley-Read-Hall model with deep recombination levels 0.245 eV above the valence band. The I02 variation with temperature follows the Sah-Noyce-Shockley-Choo model except at low temperature where extra transitions raise the value above the predicted level. Reverse bias current at low voltage is a thermally assisted tunneling process via deep levels which are observed in base recombination at higher temperatures. The tunneling effects tend to become independent of temperature in the low-temperature region. These results demonstrate the ability to deduce basic parameters such as lifetime from simple measurements and show that back-surface fields offer no advantage at temperatures below 230 K. The analysis also explains the fall in lifetimes observed as the base conductivity increases, attributing it to native defects (perhaps carbon-oxygen-vacancy complexes) rather than the concentration of base dopant.

Voltage-Load Sensitivity Matrix Based Demand Response for Voltage Control in High Solar Penetration Distribution Feeders

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Xiangqi; Wang, Jiyu; Mulcahy, David

This paper presents a voltage-load sensitivity matrix (VLSM) based voltage control method to deploy demand response resources for controlling voltage in high solar penetration distribution feeders. The IEEE 123-bus system in OpenDSS is used for testing the performance of the preliminary VLSM-based voltage control approach. A load disaggregation process is applied to disaggregate the total load profile at the feeder head to each load nodes along the feeder so that loads are modeled at residential house level. Measured solar generation profiles are used in the simulation to model the impact of solar power on distribution feeder voltage profiles. Different casemore » studies involving various PV penetration levels and installation locations have been performed. Simulation results show that the VLSM algorithm performance meets the voltage control requirements and is an effective voltage control strategy.« less

Improved model of activation energy absorption for different electrical breakdowns in semi-crystalline insulating polymers

NASA Astrophysics Data System (ADS)

Sima, Wenxia; Jiang, Xiongwei; Peng, Qingjun; Sun, Potao

2018-05-01

Electrical breakdown is an important physical phenomenon in electrical equipment and electronic devices. Many related models and theories of electrical breakdown have been proposed. However, a widely recognized understanding on the following phenomenon is still lacking: impulse breakdown strength which varies with waveform parameters, decrease in the breakdown strength of AC voltage with increasing frequency, and higher impulse breakdown strength than that of AC. In this work, an improved model of activation energy absorption for different electrical breakdowns in semi-crystalline insulating polymers is proposed based on the Harmonic oscillator model. Simulation and experimental results show that, the energy of trapped charges obtained from AC stress is higher than that of impulse voltage, and the absorbed activation energy increases with the increase in the electric field frequency. Meanwhile, the frequency-dependent relative dielectric constant ε r and dielectric loss tanδ also affect the absorption of activation energy. The absorbed activation energy and modified trap level synergistically determine the breakdown strength. The mechanism analysis of breakdown strength under various voltage waveforms is consistent with the experimental results. Therefore, the proposed model of activation energy absorption in the present work may provide a new possible method for analyzing and explaining the breakdown phenomenon in semi-crystalline insulating polymers.

Voltage-gated sodium channel expression and action potential generation in differentiated NG108-15 cells.

PubMed

Liu, Jinxu; Tu, Huiyin; Zhang, Dongze; Zheng, Hong; Li, Yu-Long

2012-10-25

The generation of action potential is required for stimulus-evoked neurotransmitter release in most neurons. Although various voltage-gated ion channels are involved in action potential production, the initiation of the action potential is mainly mediated by voltage-gated Na+ channels. In the present study, differentiation-induced changes of mRNA and protein expression of Na+ channels, Na+ currents, and cell membrane excitability were investigated in NG108-15 cells. Whole-cell patch-clamp results showed that differentiation (9 days) didn't change cell membrane excitability, compared to undifferentiated state. But differentiation (21 days) induced the action potential generation in 45.5% of NG108-15 cells (25/55 cells). In 9-day-differentiated cells, Na+ currents were mildly increased, which was also found in 21-day differentiated cells without action potential. In 21-day differentiated cells with action potential, Na+ currents were significantly enhanced. Western blot data showed that the expression of Na+ channels was increased with differentiated-time dependent manner. Single-cell real-time PCR data demonstrated that the expression of Na+ channel mRNA was increased by 21 days of differentiation in NG108-15 cells. More importantly, the mRNA level of Na+ channels in cells with action potential was higher than that in cells without action potential. Differentiation induces expression of voltage-gated Na+ channels and action potential generation in NG108-15 cells. A high level of the Na+ channel density is required for differentiation-triggered action potential generation.

A Single Phase 7-Level Cascade Inverter Topology with Reduced Number of Switches on Resistive Load by Using PWM

NASA Astrophysics Data System (ADS)

Hamzah, H. H.; Ponniran, A.; Kasiran, A. N.; Harimon, M. A.; Gendum, D. A.; Yatim, M. H.

2018-04-01

This paper discussing design principles of inverter structure with reduced number of semiconductor devices of seven levels symmetric H-bridge multilevel inverter (MLI) topology. The aim of this paper is to design an inverter circuit with reduction of semiconductor losses, converter size and development cost. The H-bridge and auxiliary structures were considered in order to achieve seven levels output voltage. The performance of design circuit is compared with conventional seven levels structure in terms of voltage output. The circuit development consists of seven switches and three diode. A basic modulation technique is used to confirm the designed circuit. The results show that the designed circuit is able to convert seven level output voltage with low total harmonics distortion (THD) in voltage fundamental output. According to the results, fundamental output voltage is increased up to 8.314%, and the THD is decreased up to 0.81% compared to the conventional seven level inverter.

Investigation of the frequency response of constant voltage anemometers in turbulent flows

NASA Astrophysics Data System (ADS)

Sadeghi Hassanlouei, Atabak

A commercially available anemometer system considered as a prototype, the constant voltage anemometer (CVA), is presented and its working principle is studied and analyzed. We detail the different procedures and corrections that have to be applied to voltage signals to deduce corresponding velocity signals, including the effect of the thermal inertia of the sensor. Results are compared to another anemometer system widely used in research and industry, the constant temperature anemometer (CTA), for validation requirements. Measurements are performed in the turbulent region of a subsonic axisymmetric jet and include mean velocities, root-mean-square (rms) values of velocity fluctuations and power spectral densities. In the same range of operation, we show that the two instruments give similar results. The CVA anemometer slightly underestimates the rms velocity values given by the CTA anemometer which is attributed to a non-linear effect. We show that the cut-off frequency of the CVA system is higher than the more commonly used CTA system, and that the electronic noise level is lower. The constant voltage anemometer is thus an excellent alternative to the constant temperature anemometer for low turbulent flows with rich frequency content, such as supersonic and hypersonic flows.

Method of determining the x-ray limit of an ion gauge

DOEpatents

Edwards, Jr., David; Lanni, Christopher P.

1981-01-01

An ion gauge having a reduced "x-ray limit" and means for measuring that limit. The gauge comprises an ion gauge of the Bayard-Alpert type having a short collector and having means for varying the grid-collector voltage. The "x-ray limit" (i.e. the collector current resulting from x-rays striking the collector) may then be determined by the formula: ##EQU1## where: I.sub.x ="x-ray limit", I.sub.l and I.sub.h =the collector current at the lower and higher grid voltage respectively; and, .alpha.=the ratio of the collector current due to positive ions at the higher voltage to that at the lower voltage.

Carbonyl compounds in electronic cigarette vapors: effects of nicotine solvent and battery output voltage.

PubMed

Kosmider, Leon; Sobczak, Andrzej; Fik, Maciej; Knysak, Jakub; Zaciera, Marzena; Kurek, Jolanta; Goniewicz, Maciej Lukasz

2014-10-01

Glycerin (VG) and propylene glycol (PG) are the most common nicotine solvents used in e-cigarettes (ECs). It has been shown that at high temperatures both VG and PG undergo decomposition to low molecular carbonyl compounds, including the carcinogens formaldehyde and acetaldehyde. The aim of this study was to evaluate how various product characteristics, including nicotine solvent and battery output voltage, affect the levels of carbonyls in EC vapor. Twelve carbonyl compounds were measured in vapors from 10 commercially available nicotine solutions and from 3 control solutions composed of pure glycerin, pure propylene glycol, or a mixture of both solvents (50:50). EC battery output voltage was gradually modified from 3.2 to 4.8V. Carbonyl compounds were determined using the HPLC/DAD method. Formaldehyde and acetaldehyde were found in 8 of 13 samples. The amounts of formaldehyde and acetaldehyde in vapors from lower voltage EC were on average 13- and 807-fold lower than in tobacco smoke, respectively. The highest levels of carbonyls were observed in vapors generated from PG-based solutions. Increasing voltage from 3.2 to 4.8V resulted in a 4 to more than 200 times increase in formaldehyde, acetaldehyde, and acetone levels. The levels of formaldehyde in vapors from high-voltage device were in the range of levels reported in tobacco smoke. Vapors from EC contain toxic and carcinogenic carbonyl compounds. Both solvent and battery output voltage significantly affect levels of carbonyl compounds in EC vapors. High-voltage EC may expose users to high levels of carbonyl compounds. © The Author 2014. Published by Oxford University Press on behalf of the Society for Research on Nicotine and Tobacco. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Fen; Chen, Aixi; Institute for Quantum Computing & Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, ON N2L 3G1 Canada

Resonant tunneling can lead to inverse tunnel magnetoresistance when impurity levels rather than direct tunneling dominate the transport process. We fabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with an epitaxial LiF energy barrier joined with a polycrystalline EuS spin-filter barrier. Due to the water solubility of LiF, the devices were fully packaged in situ. The devices showed sizeable positive TMR up to 16% at low bias voltages but clearly inverted TMR at higher bias voltages. The TMR inversion depends sensitively on the thickness of LiF, and the tendency of inversion disappears when LiF gets thick enough and recovers its intrinsicmore » properties.« less

High-voltage 4H-SiC trench MOS barrier Schottky rectifier with low forward voltage drop using enhanced sidewall layer

NASA Astrophysics Data System (ADS)

Cho, Doohyung; Sim, Seulgi; Park, Kunsik; Won, Jongil; Kim, Sanggi; Kim, Kwangsoo

2015-12-01

In this paper, a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier with an enhanced sidewall layer (ESL) is proposed. The proposed structure has a high doping concentration at the trench sidewall. This high doping concentration improves both the reverse blocking and forward characteristics of the structure. The ESL-TMBS rectifier has a 7.4% lower forward voltage drop and a 24% higher breakdown voltage. However, this structure has a reverse leakage current that is approximately three times higher than that of a conventional TMBS rectifier owing to the reduction in energy barrier height. This problem is solved when ESL is used partially, since its use provides a reverse leakage current that is comparable to that of a conventional TMBS rectifier. Thus, the forward voltage drop and breakdown voltage improve without any loss in static and dynamic characteristics in the ESL-TMBS rectifier compared with the performance of a conventional TMBS rectifier.

Three-Level 48-Pulse STATCOM with Pulse Width Modulation

NASA Astrophysics Data System (ADS)

Singh, Bhim; Srinivas, Kadagala Venkata

2016-03-01

In this paper, a new control strategy of a three-level 48-pulse static synchronous compensator (STATCOM) is proposed with a constant dc link voltage and pulse width modulation at fundamental frequency switching. The proposed STATCOM is realized using eight units of three-level voltage source converters (VSCs) to form a three-level 48-pulse STATCOM. The conduction angle of each three-level VSC is modulated to control the ac converter output voltage, which controls the reactive power of the STATCOM. A fuzzy logic controller is used to control the STATCOM. The dynamic performance of the STATCOM is studied for the control of the reference reactive power, the reference terminal voltage and under the switching of inductive and capacitive loads.

Voltage scheduling for low power/energy

NASA Astrophysics Data System (ADS)

Manzak, Ali

2001-07-01

Power considerations have become an increasingly dominant factor in the design of both portable and desk-top systems. An effective way to reduce power consumption is to lower the supply voltage since voltage is quadratically related to power. This dissertation considers the problem of lowering the supply voltage at (i) the system level and at (ii) the behavioral level. At the system level, the voltage of the variable voltage processor is dynamically changed with the work load. Processors with limited sized buffers as well as those with very large buffers are considered. Given the task arrival times, deadline times, execution times, periods and switching activities, task scheduling algorithms that minimize energy or peak power are developed for the processors equipped with very large buffers. A relation between the operating voltages of the tasks for minimum energy/power is determined using the Lagrange multiplier method, and an iterative algorithm that utilizes this relation is developed. Experimental results show that the voltage assignment obtained by the proposed algorithm is very close (0.1% error) to that of the optimal energy assignment and the optimal peak power (1% error) assignment. Next, on-line and off-fine minimum energy task scheduling algorithms are developed for processors with limited sized buffers. These algorithms have polynomial time complexity and present optimal (off-line) and close-to-optimal (on-line) solutions. A procedure to calculate the minimum buffer size given information about the size of the task (maximum, minimum), execution time (best case, worst case) and deadlines is also presented. At the behavioral level, resources operating at multiple voltages are used to minimize power while maintaining the throughput. Such a scheme has the advantage of allowing modules on the critical paths to be assigned to the highest voltage levels (thus meeting the required timing constraints) while allowing modules on non-critical paths to be assigned to lower voltage levels (thus reducing the power consumption). A polynomial time resource and latency constrained scheduling algorithm is developed to distribute the available slack among the nodes such that power consumption is minimum. The algorithm is iterative and utilizes the slack based on the Lagrange multiplier method.

Imaging diagnostics of pulsed plasma discharges in saline generated with various sharp pin powered electrodes

NASA Astrophysics Data System (ADS)

Asimakoulas, L.; Karim, M. L.; Dostal, L.; Krcma, F.; Graham, W. G.; Field, T. A.

2016-09-01

Plasmas formed by 1 ms pulses of between 180 and 300 V applied to sharp pin-like electrodes immersed in saline solution have been imaged with a Photron SA-X2 fast framing camera and an Andor iStar 510 ICCD camera. Stainless steel, Tungsten and Gold electrodes were investigated with tip diameters of 30 μm, 1 μm and < 1 μ m respectively. As previously observed, a vapour layer forms around the electrode prior to plasma ignition. For gold and stainless steel lower voltages were required to minimize electrode damage. Preliminary anlaysis indicates at lower voltages for all tips the fast framing results show that light emission is normally centred on a single small volume, which appears to move about, but remains close to the tip. In the case of Tungsten with higher voltages or longer pulses the tip of the needle can heat up to incandescent temperatures. At higher voltages shock wave fronts appear to be observed as the vapour layer collapses at the end of the voltage pulse. Backlighting and no lighting to observe bubble/vapour layer formation and emission due to plasma formation were employed. Sometimes at higher voltages a thicker vapour layer engulfs the tip and no plasma emission/current is observed.

MIS capacitor studies on silicon carbide single crystals

NASA Technical Reports Server (NTRS)

Kopanski, J. J.

1990-01-01

Cubic SIC metal-insulator-semiconductor (MIS) capacitors with thermally grown or chemical-vapor-deposited (CVD) insulators were characterized by capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) measurements. The purpose of these measurements was to determine the four charge densities commonly present in an MIS capacitor (oxide fixed charge, N(f); interface trap level density, D(it); oxide trapped charge, N(ot); and mobile ionic charge, N(m)) and to determine the stability of the device properties with electric-field stress and temperature. The section headings in the report include the following: Capacitance-voltage and conductance-voltage measurements; Current-voltage measurements; Deep-level transient spectroscopy; and Conclusions (Electrical characteristics of SiC MIS capacitors).

A rugged 650 V SOI-based high-voltage half-bridge IGBT gate driver IC for motor drive applications

NASA Astrophysics Data System (ADS)

Hua, Qing; Li, Zehong; Zhang, Bo; Chen, Weizhong; Huang, Xiangjun; Feng, Yuxiang

2015-05-01

This paper proposes a rugged high-voltage N-channel insulated gate bipolar transistor (IGBT) gate driver integrated circuit. The device integrates a high-side and a low-side output stages on a single chip, which is designed specifically for motor drive applications. High-voltage level shift technology enables the high-side stage of this device to operate up to 650 V. The logic inputs are complementary metal oxide semiconductor (CMOS)/transistor transistor logic compatible down to 3.3 V. Undervoltage protection functionality with hysteresis characteristic has also been integrated to enhance the device reliability. The device is fabricated in a 1.0 μm, 650 V high-voltage bipolar CMOS double-diffused metal oxide semiconductor (BCD) on silicon-on-insulator (SOI) process. Deep trench dielectric isolation technology is employed to provide complete electrical isolation with advantages such as reduced parasitic effects, excellent noise immunity and low leakage current. Experimental results show that the isolation voltage of this device can be up to approximately 779 V at 25°C, and the leakage current is only 5 nA at 650 V, which is 15% higher and 67% lower than the conventional ones. In addition, it delivers an excellent thermal stability and needs very low quiescent current and offers a high gate driver capability which is needed to adequately drive IGBTs that have large input capacitances.

System and method for charging electrochemical cells in series

DOEpatents

DeLuca, William H.; Hornstra, Jr, Fred; Gelb, George H.; Berman, Baruch; Moede, Larry W.

1980-01-01

A battery charging system capable of equalizing the charge of each individual cell at a selected full charge voltage includes means for regulating charger current to first increase current at a constant rate until a bulk charging level is achieved or until any cell reaches a safe reference voltage. A system controller then begins to decrease the charging rate as long as any cell exceeds the reference voltage until an equalization current level is reached. At this point, the system controller activates a plurality of shunt modules to permit shunting of current around any cell having a voltage exceeding the reference voltage. Leads extending between the battery of cells and shunt modules are time shared to permit alternate shunting of current and voltage monitoring without the voltage drop caused by the shunt current. After each cell has at one time exceeded the reference voltage, the charging current is terminated.

Performance of Li-Ion Cells Under Battery Voltage Charge Control

NASA Technical Reports Server (NTRS)

Rao, Gopalakrishna M.; Vaidyanathan, Hari; Day, John H. (Technical Monitor)

2001-01-01

A study consisting of electrochemical characterization and Low-Earth-Orbit (LEO) cycling of Li-Ion cells from three vendors was initiated in 1999 to determine the cycling performance and to infuse the new technology in the future NASA missions. The 8-cell batteries included in this evaluation are prismatic cells manufactured by Mine Safety Appliances Company (MSA), cylindrical cells manufactured by SAFT and prismatic cells manufactured by Yardney Technical Products, Inc. (YTP). The three batteries were cycle tested in the LEO regime at 40% depth of discharge, and under a charge control technique that consists of battery voltage clamp with a current taper. The initial testing was conducted at 20 C; however, the batteries were cycled also intermittently at low temperatures. YTP 20 Ah cells consisted of mixed-oxide (Co and Ni) positive, graphitic carbon negative, LIPF6 salt mixed with organic carbonate solvents. The battery voltage clamp was 32 V. The low temperature cycling tests started after 4575 cycles at 20 C. The cells were not capable of cycling. at low temperature since the charge acceptance at battery level was poor. There was a cell in the battery that showed too high an end-of-charge (EOC) voltage thereby limiting the ability to charge the rest of the cells in the battery. The battery has completed 6714 cycles. SAFT 12 Ah cells consisted of mixed-oxide (Co and NO positive, graphitic carbon negative, LiPF6 salt mixed with organic carbonate solvents. The battery voltage clamp was for 30.8 V. The low temperature cycling tests started after 4594 cycles at 20 C. A cell that showed low end of discharge (EOD) and EOC voltages and three other cells that showed higher EOC voltages limited the charge acceptance at the selected voltage limit during charge. The cells were capable of cycling at 10 C and 0 C but the charge voltage limit had to be increased to 34.3 V (4.3 V per cell). The low temperature cycling may have induced poor chargeability since the voltage had to be increased to achieve the required charge input. The battery has completed 6226 cycles. MSA 10 Ah cells consisted of Co oxide positive, graphitic carbon negative, LiPF6 salt mixed with organic carbonate solvents. The battery voltage clamp was 30.8 V. The low temperature cycling tests were started after 2182 cycles at 20 C. The cells were capable of cycling at 10 C and 0 C. Like SAFT, the voltage limit on charge had to be increased to 36 V (4.5 V per cell). There was a cell (cell S/N 13) in the battery that showed poor performance features such as low EOD voltage and high EOC voltage. The battery has completed 3441 cycles. A reconditioning procedure that consisted of C15 charge to a taper current of C/100 and C/20 discharge improved the voltage behavior of SAFT and MSA cells with no significant effect on YTP cells. We have demonstrated that the charge operation with VT clamp at battery rather than at cell level is feasible for onboard Li-Ion battery operation.

Planar LTCC transformers for high voltage flyback converters: Part II.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schofield, Daryl; Schare, Joshua M., Ph.D.; Slama, George

This paper is a continuation of the work presented in SAND2007-2591 'Planar LTCC Transformers for High Voltage Flyback Converters'. The designs in that SAND report were all based on a ferrite tape/dielectric paste system originally developed by NASCENTechnoloy, Inc, who collaborated in the design and manufacturing of the planar LTCC flyback converters. The output/volume requirements were targeted to DoD application for hard target/mini fuzing at around 1500 V for reasonable primary peak currents. High voltages could be obtained but with considerable higher current. Work had begun on higher voltage systems and is where this report begins. Limits in material propertiesmore » and processing capabilities show that the state-of-the-art has limited our practical output voltage from such a small part volume. In other words, the technology is currently limited within the allowable funding and interest.« less

Experimental Study on the Dielectric Breakdown Voltage of the Insulating Oil Mixed with Magnetic Nanoparticles

NASA Astrophysics Data System (ADS)

Lee, Jong-Chul; Kim, Woo-Young

In this study, we have measured the dielectric breakdown voltage of transformer oil-based nanofluids in accordance with IEC 156 standard and have investigated the dielectric breakdown performance with the application of an external magnetic field and different volume concentrations of magnetic nanoparticles. It is confirmed that the dielectric breakdown voltage of pure transformer oil is about 10 kV with a gap distance of 1 mm between electrodes. In the case of our transformer oil-based nanofluids with 0.08% < Φ < 0.39% (Φ means the volume concentration of magnetic nanoparticles in the fluid), the dielectric breakdown voltage is three times higher than that of pure transformer oil. Furthermore, when the external magnetic field is applied under the experimental vessel, the dielectric breakdown voltage of the nanofluids is above 40 kV, which is 30% higher than that without the external magnetic field.

Nitridation of silicon by nitrogen neutral beam

NASA Astrophysics Data System (ADS)

Hara, Yasuhiro; Shimizu, Tomohiro; Shingubara, Shoso

2016-02-01

Silicon nitridation was investigated at room temperature using a nitrogen neutral beam (NB) extracted at acceleration voltages of less than 100 V. X-ray photoelectron spectroscopy (XPS) analysis confirmed the formation of a Si3N4 layer on a Si (1 0 0) substrate when the acceleration voltage was higher than 20 V. The XPS depth profile indicated that nitrogen diffused to a depth of 36 nm for acceleration voltages of 60 V and higher. The thickness of the silicon nitrided layer increased with the acceleration voltages from 20 V to 60 V. Cross-sectional transmission electron microscopy (TEM) analysis indicated a Si3N4 layer thickness of 3.1 nm was obtained at an acceleration voltage of 100 V. Moreover, it was proved that the nitrided silicon layer formed by the nitrogen NB at room temperature was effective as the passivation film in the wet etching process.

Boeing's High Voltage Solar Tile Test Results

NASA Astrophysics Data System (ADS)

Reed, Brian J.; Harden, David E.; Ferguson, Dale C.; Snyder, David B.

2002-10-01

Real concerns of spacecraft charging and experience with solar array augmented electrostatic discharge arcs on spacecraft have minimized the use of high voltages on large solar arrays despite numerous vehicle system mass and efficiency advantages. Boeing's solar tile (patent pending) allows high voltage to be generated at the array without the mass and efficiency losses of electronic conversion. Direct drive electric propulsion and higher power payloads (lower spacecraft weight) will benefit from this design. As future power demand grows, spacecraft designers must use higher voltage to minimize transmission loss and power cable mass for very large area arrays. This paper will describe the design and discuss the successful test of Boeing's 500-Volt Solar Tile in NASA Glenn's Tenney chamber in the Space Plasma Interaction Facility. The work was sponsored by NASA's Space Solar Power Exploratory Research and Technology (SERT) Program and will result in updated high voltage solar array design guidelines being published.

Boeing's High Voltage Solar Tile Test Results

NASA Technical Reports Server (NTRS)

Reed, Brian J.; Harden, David E.; Ferguson, Dale C.; Snyder, David B.

2002-01-01

Real concerns of spacecraft charging and experience with solar array augmented electrostatic discharge arcs on spacecraft have minimized the use of high voltages on large solar arrays despite numerous vehicle system mass and efficiency advantages. Boeing's solar tile (patent pending) allows high voltage to be generated at the array without the mass and efficiency losses of electronic conversion. Direct drive electric propulsion and higher power payloads (lower spacecraft weight) will benefit from this design. As future power demand grows, spacecraft designers must use higher voltage to minimize transmission loss and power cable mass for very large area arrays. This paper will describe the design and discuss the successful test of Boeing's 500-Volt Solar Tile in NASA Glenn's Tenney chamber in the Space Plasma Interaction Facility. The work was sponsored by NASA's Space Solar Power Exploratory Research and Technology (SERT) Program and will result in updated high voltage solar array design guidelines being published.

Treatment of emulsified oils by electrocoagulation: pulsed voltage applications.

PubMed

Genc, Ayten; Bakirci, Busra

2015-01-01

The effect of pulsed voltage application on energy consumption during electrocoagulation was investigated. Three voltage profiles having the same arithmetic average with respect to time were applied to the electrodes. The specific energy consumption for these profiles were evaluated and analyzed together with oil removal efficiencies. The effects of applied voltages, electrode materials, electrode configurations, and pH on oil removal efficiency were determined. Electrocoagulation experiments were performed by using synthetic and real wastewater samples. The pulsed voltages saved energy during the electrocoagulation process. In continuous operation, energy saving was as high as 48%. Aluminum electrodes used for the treatment of emulsified oils resulted in higher oil removal efficiencies in comparison with stainless steel and iron electrodes. When the electrodes gap was less than 1 cm, higher oil removal efficiencies were obtained. The highest oil removal efficiencies were 95% and 35% for the batch and continuous operating modes, respectively.

Electrochemically controlled charging circuit for storage batteries

DOEpatents

Onstott, E.I.

1980-06-24

An electrochemically controlled charging circuit for charging storage batteries is disclosed. The embodiments disclosed utilize dc amplification of battery control current to minimize total energy expended for charging storage batteries to a preset voltage level. The circuits allow for selection of Zener diodes having a wide range of reference voltage levels. Also, the preset voltage level to which the storage batteries are charged can be varied over a wide range.

PRECISION TIME-DELAY CIRCUIT

DOEpatents

Creveling, R.

1959-03-17

A tine-delay circuit which produces a delay time in d. The circuit a capacitor, an te back resistance, connected serially with the anode of the diode going to ground. At the start of the time delay a negative stepfunction is applied to the series circuit and initiates a half-cycle transient oscillatory voltage terminated by a transient oscillatory voltage of substantially higher frequency. The output of the delay circuit is taken at the junction of the inductor and diode where a sudden voltage rise appears after the initiation of the higher frequency transient oscillations.

47 CFR 17.54 - Rated lamp voltage.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 47 Telecommunication 1 2012-10-01 2012-10-01 false Rated lamp voltage. 17.54 Section 17.54... STRUCTURES Specifications for Obstruction Marking and Lighting of Antenna Structures § 17.54 Rated lamp... lamps used shall correspond to be within 3 percent higher than the voltage across the lamp socket during...

47 CFR 17.54 - Rated lamp voltage.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 47 Telecommunication 1 2014-10-01 2014-10-01 false Rated lamp voltage. 17.54 Section 17.54... STRUCTURES Specifications for Obstruction Marking and Lighting of Antenna Structures § 17.54 Rated lamp... lamps used shall correspond to be within 3 percent higher than the voltage across the lamp socket during...

47 CFR 17.54 - Rated lamp voltage.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 47 Telecommunication 1 2010-10-01 2010-10-01 false Rated lamp voltage. 17.54 Section 17.54... STRUCTURES Specifications for Obstruction Marking and Lighting of Antenna Structures § 17.54 Rated lamp... lamps used shall correspond to be within 3 percent higher than the voltage across the lamp socket during...

47 CFR 17.54 - Rated lamp voltage.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 47 Telecommunication 1 2011-10-01 2011-10-01 false Rated lamp voltage. 17.54 Section 17.54... STRUCTURES Specifications for Obstruction Marking and Lighting of Antenna Structures § 17.54 Rated lamp... lamps used shall correspond to be within 3 percent higher than the voltage across the lamp socket during...

47 CFR 17.54 - Rated lamp voltage.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 47 Telecommunication 1 2013-10-01 2013-10-01 false Rated lamp voltage. 17.54 Section 17.54... STRUCTURES Specifications for Obstruction Marking and Lighting of Antenna Structures § 17.54 Rated lamp... lamps used shall correspond to be within 3 percent higher than the voltage across the lamp socket during...

Impact of Solar Array Designs on High Voltage Operations

NASA Technical Reports Server (NTRS)

Brandhorst, Henry W., Jr.; Ferguson, Dale; Piszczor, Mike; ONeill, Mark

2006-01-01

As power levels of advanced spacecraft climb above 25 kW, higher solar array operating voltages become attractive. Even in today s satellites, operating spacecraft buses at 100 V and above has led to arcing in GEO communications satellites, so the issue of spacecraft charging and solar array arcing remains a design problem. In addition, micrometeoroid impacts on all of these arrays can also lead to arcing if the spacecraft is at an elevated potential. For example, tests on space station hardware disclosed arcing at 75V on anodized A1 structures that were struck with hypervelocity particles in Low Earth Orbit (LEO) plasmas. Thus an understanding of these effects is necessary to design reliable high voltage solar arrays of the future, especially in light of the Vision for Space Exploration of NASA. In the future, large GEO communication satellites, lunar bases, solar electric propulsion missions, high power communication systems around Mars can lead to power levels well above 100 kW. As noted above, it will be essential to increase operating voltages of the solar arrays well above 80 V to keep the mass of cabling needed to carry the high currents to an acceptable level. Thus, the purpose of this paper is to discuss various solar array approaches, to discuss the results of testing them at high voltages, in the presence of simulated space plasma and under hypervelocity impact. Three different types of arrays will be considered. One will be a planar array using thin film cells, the second will use planar single or multijunction cells and the last will use the Stretched Lens Array (SLA - 8-fold concentration). Each of these has different approaches for protection from the space environment. The thin film cell based arrays have minimal covering due to their inherent radiation tolerance, conventional GaAs and multijunction cells have the traditional cerium-doped microsheet glasses (of appropriate thickness) that are usually attached with Dow Corning DC 93-500 silicone adhesive. In practice, these cover glasses and adhesive do not cover the cell edges. Finally, in the SLA, the entire cell and cell edges are fully encapsulated by a cover glass that overhangs the cell perimeter and the silicone adhesive covers the cell edges providing a sealed environment. These three types of blanket technology have been tested at GRC and Auburn. The results of these tests will be described. For example, 15 modules composed of four state-of-the-art 2x4 cm GaAs solar cells with 150 pm cover glasses connected in two-cell series strings were tested at high voltage, in plasma under hypervelocity impact. A picture of one of the modules is shown in figure 1. These were prepared by standard industry practice from a major supplier and had efficiencies above 18%. The test results and other fabrication factors that influenced the tests will be presented. In addition, results for SLA segments tested under the same conditions will be presented. Testing of thin film blankets at GRC will also be presented. Figure 1 : Typical GaAs Solar Cell Module These results will show significant differences in resistance to arcing that are directly related to array design and manufacturing procedures. Finally, the approaches for mitigating the problems uncovered by these tests will be described. These will lay the foundation for future higher voltage array operation, even including voltages above 300-600 V for direct drive SEP applications.

High-power and 2.5 kW advanced-technology ion thruster

NASA Technical Reports Server (NTRS)

Poeschel, R. L.

1977-01-01

Investigations for improving ion thruster components in the 30 cm engineering model thruster (EMT) resulted in the demonstration of useful techniques for grid short removal and discharge chamber erosion monitoring, establishment of relationships between double ion production and thruster operating parameters, verification of satisfactory specifications on porous tungsten vaporizer material and barium impregnated porous tungsten inserts, demonstration of a new hollow cathode configuration, and specification of magnetic circuit requirements for reproducing desired magnetic mappings. The capacity of a 30 cm EMT to operate at higher beam voltages and currents (higher power) was determined. Operation at 2 A beam current and higher beam voltage is shown to be essentially equivalent to operation at 1.1 kV with regard to efficiency, lifetime and operating conditions. The only additional requirement is an improvement in high voltage insulation and propellant isolator capacity. Operation at minimum voltage and higher beam currents is shown to increase thruster discharge chamber erosion in proportion to beam current. Studies to find alternatives to molybdenum for manufacturing ion optics grids are also reported.

Solid state d.c. power controller design philosophies and their evaluation.

NASA Technical Reports Server (NTRS)

Maus, L. G.; Williams, D. E.

1972-01-01

Evaluation of remote power controllers (RPC), which has enhanced knowledge of the capabilities of various design philosophies and has indicated certain limitations that RPC's exhibit. Additionally, this activity has clearly emphasized that certain RPC design parameters merit further consideration in development. The major design parameters to be analyzed in more detail are the rates of change of the rise and fall times of the output current. The major reason why transient voltages and currents should be reduced is the minimization of the reverse collector-to-emitter voltage. The requirement for higher bus voltage coupled with the present problem of improving the efficiency of power control points out the urgent need for improvement and advancement of higher current, voltage, and gain power semiconductors.

Self-modulating pressure gauge

DOEpatents

Edwards, D. Jr.; Lanni, C.P.

1979-08-07

An ion gauge is disclosed having a reduced x-ray limit and means for measuring that limit. The gauge comprises an ion gauge of the Bayard-Alpert type having a short collector and having means for varying the grid-collector voltage. The x-ray limit (i.e. the collector current resulting from x-rays striking the collector) may then be determined by the formula: I/sub x/ = ..cap alpha..I/sub l/ - I/sub h//..cap alpha.. - l where: I/sub x/ = x-ray limit, I/sub l/ and I/sub h/ = the collector current at the lower and higher grid voltage respectively; and, ..cap alpha.. = the ratio of the collector current due to positive ions at the higher voltage to that at the lower voltage.

Anode reactive bleed and injector shift control strategy

DOEpatents

Cai, Jun [Rochester, NY; Chowdhury, Akbar [Pittsford, NY; Lerner, Seth E [Honeoye Falls, NY; Marley, William S [Rush, NY; Savage, David R [Rochester, NY; Leary, James K [Rochester, NY

2012-01-03

A system and method for correcting a large fuel cell voltage spread for a split sub-stack fuel cell system. The system includes a hydrogen source that provides hydrogen to each split sub-stack and bleed valves for bleeding the anode side of the sub-stacks. The system also includes a voltage measuring device for measuring the voltage of each cell in the split sub-stacks. The system provides two levels for correcting a large stack voltage spread problem. The first level includes sending fresh hydrogen to the weak sub-stack well before a normal reactive bleed would occur, and the second level includes sending fresh hydrogen to the weak sub-stack and opening the bleed valve of the other sub-stack when the cell voltage spread is close to stack failure.

Enhancement of macroscopic quantum tunneling in the higher-order phase switches of Bi2212 intrinsic Josephson junctions

NASA Astrophysics Data System (ADS)

Kitano, Haruhisa; Yamaguchi, Ayami; Takahashi, Yusaku; Umegai, Shunpei; Watabe, Yuji; Ohnuma, Haruka; Hosaka, Kazutaka; Kakehi, Daiki

2018-03-01

The macroscopic quantum tunneling (MQT) in the current-biased intrinsic Josephson junctions (IJJs) of high-T c cuprates has attracted much attention for decades. Although the MQT for the phase switches from the zero to the first voltage state (1st SW) in the multiple-branched I-V curves is well explained by the conventional theory, the occurrence of MQT for the higher order switches such as the switch from the 1st to 2nd voltage state (2nd SW) has been still debated. Here, we present an experimental study on the phase switches of small IJJs fabricated from underdoped Bi2Sr2(Ca,Y)Cu2Oy. We observed the single photon transition between quantized energy levels in the 3rd phase switches at 59.15 GHz and 2 K. The comparison with the previous studies on the nearly optimal-doped Bi2Sr2CaCu2Oy clearly suggests a possibility that the MQT rate for the higher-order phase switches is commonly enhanced by the effective suppression of the energy barrier for the higher-order phase escape due to the phase-running state after the 1st SW, in spite of the large difference in a critical current density and T c.

Studies on transient characteristics of unipolar resistive switching processes in TiO2 thin film grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Sahu, Vikas Kumar; Das, Amit K.; Ajimsha, R. S.; Misra, P.

2018-05-01

The transient characteristics of resistive switching processes have been investigated in TiO2 thin films grown by atomic layer deposition (ALD) to study the temporal evolution of the switching processes and measure the switching times. The reset and set switching times of unipolar Au/TiO2/Pt devices were found to be ~250 µs and 180 ns, respectively in the voltage windows of 0.5–0.9 V for reset and 1.9–4.8 V for set switching processes, obtained from quasi-static measurements. The reset switching time decreased exponentially with increasing amplitude of applied reset voltage pulse, while the set switching time remained insensitive to the amplitude of the set voltage pulse. A fast reset process with a switching time of ~400 ns was achieved by applying a reset voltage of ~1.8 V, higher than that of the quasi-static reset voltage window but below the set voltage window. The sluggish reset process in TiO2 thin film and the dependence of the reset switching time on the amplitude of the applied voltage pulse was understood on the basis of a self-accelerated thermal dissolution model of conducting filaments (CFs), where a higher temperature of the CFs owing to enhanced Joule heating at a higher applied voltage imposes faster diffusion of oxygen vacancies, resulting in a shorter reset switching time. Our results clearly indicate that fast resistive switching with switching times in hundreds of nanoseconds can be achieved in ALD-grown TiO2 thin films. This may find applications in fast non-volatile unipolar resistive switching memories.

Influence of the electrode gap separation on the pseudospark-sourced electron beam generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, J., E-mail: junping.zhao@qq.com; State Key Laboratory of Electrical Insulation and Power Equipment, West Xianning Road, Xi'an 710049; Department of Physics, SUPA, University of Strathclyde, Glasgow, G4 0NG Scotland

Pseudospark-sourced electron beam is a self-focused intense electron beam which can propagate without any external focusing magnetic field. This electron beam can drive a beam-wave interaction directly or after being post-accelerated. It is especially suitable for terahertz radiation generation due to the ability of a pseudospark discharge to produce small size in the micron range and very high current density and bright electron beams. In this paper, a single-gap pseudospark discharge chamber has been built and tested with several electrode gap separations to explore the dependence of the pseudospark-sourced electron beam current on the discharge voltage and the electrode gapmore » separation. Experimental results show that the beam pulses have similar pulse width and delay time from the distinct drop of the applied voltage for smaller electrode gap separations but longer delay time for the largest gap separation used in the experiment. It has been found that the electron beam only starts to occur when the charging voltage is above a certain value, which is defined as the starting voltage of the electron beam. The starting voltage is different for different electrode gap separations and decreases with increasing electrode gap separation in our pseudospark discharge configuration. The electron beam current increases with the increasing discharge voltage following two tendencies. Under the same discharge voltage, the configuration with the larger electrode gap separation will generate higher electron beam current. When the discharge voltage is higher than 10 kV, the beam current generated at the electrode gap separation of 17.0 mm, is much higher than that generated at smaller gap separations. The ionization of the neutral gas in the main gap is inferred to contribute more to the current increase with increasing electrode gap separation.« less

DIFFERENTIAL FAULT SENSING CIRCUIT

DOEpatents

Roberts, J.H.

1961-09-01

A differential fault sensing circuit is designed for detecting arcing in high-voltage vacuum tubes arranged in parallel. A circuit is provided which senses differences in voltages appearing between corresponding elements likely to fault. Sensitivity of the circuit is adjusted to some level above which arcing will cause detectable differences in voltage. For particular corresponding elements, a group of pulse transformers are connected in parallel with diodes connected across the secondaries thereof so that only voltage excursions are transmitted to a thyratron which is biased to the sensitivity level mentioned.

Experimental Investigation of the Effect of the Driving Voltage of an Electroadhesion Actuator.

PubMed

Koh, Keng Huat; Sreekumar, M; Ponnambalam, S G

2014-06-25

This paper investigates the effect of driving voltage on the attachment force of an electroadhesion actuator, as the existing literature on the saturation of the adhesive force at a higher electric field is incomplete. A new type of electroadhesion actuator using normally available materials, such as aluminum foil, PVC tape and a silicone rubber sheet used for keyboard protection, has been developed with a simple layered structure that is capable of developing adhesive force consistently. The developed actuator is subjected to the experiment for the evaluation of various test surfaces; aluminum, brick, ceramic, concrete and glass. The driving high voltage is varied in steps to determine the characteristics of the output holding force. Results show a quadratic relation between F (adhesion force) and V (driving voltage) within the 2 kV range. After this range, the F - V responses consistently show a saturation trend at high electric fields. Next, the concept of the leakage current that can occur in the dielectric material and the corona discharge through air has been introduced. Results show that the voltage level, which corresponds to the beginning of the supply current, matches well with the beginning of the force saturation. With the confirmation of this hypothesis, a working model for electroadhesion actuation is proposed. Based on the experimental results, it is proposed that such a kind of actuator can be driven within a range of optimum high voltage to remain electrically efficient. This practice is recommended for the future design, development and characterization of electroadhesion actuators for robotic applications.

Experimental Investigation of the Effect of the Driving Voltage of an Electroadhesion Actuator

PubMed Central

Koh, Keng Huat; Sreekumar, M.; Ponnambalam, S. G.

2014-01-01

This paper investigates the effect of driving voltage on the attachment force of an electroadhesion actuator, as the existing literature on the saturation of the adhesive force at a higher electric field is incomplete. A new type of electroadhesion actuator using normally available materials, such as aluminum foil, PVC tape and a silicone rubber sheet used for keyboard protection, has been developed with a simple layered structure that is capable of developing adhesive force consistently. The developed actuator is subjected to the experiment for the evaluation of various test surfaces; aluminum, brick, ceramic, concrete and glass. The driving high voltage is varied in steps to determine the characteristics of the output holding force. Results show a quadratic relation between F (adhesion force) and V (driving voltage) within the 2 kV range. After this range, the F-V responses consistently show a saturation trend at high electric fields. Next, the concept of the leakage current that can occur in the dielectric material and the corona discharge through air has been introduced. Results show that the voltage level, which corresponds to the beginning of the supply current, matches well with the beginning of the force saturation. With the confirmation of this hypothesis, a working model for electroadhesion actuation is proposed. Based on the experimental results, it is proposed that such a kind of actuator can be driven within a range of optimum high voltage to remain electrically efficient. This practice is recommended for the future design, development and characterization of electroadhesion actuators for robotic applications. PMID:28788114

Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Padilla, J. L., E-mail: jose.padilladelatorre@epfl.ch; Alper, C.; Ionescu, A. M.

2015-06-29

We investigate the effect of pseudo-bilayer configurations at low operating voltages (≤0.5 V) in the heterogate germanium electron-hole bilayer tunnel field-effect transistor (HG-EHBTFET) compared to the traditional bilayer structures of EHBTFETs arising from semiclassical simulations where the inversion layers for electrons and holes featured very symmetric profiles with similar concentration levels at the ON-state. Pseudo-bilayer layouts are attained by inducing a certain asymmetry between the top and the bottom gates so that even though the hole inversion layer is formed at the bottom of the channel, the top gate voltage remains below the required value to trigger the formation of themore » inversion layer for electrons. Resulting benefits from this setup are improved electrostatic control on the channel, enhanced gate-to-gate efficiency, and higher I{sub ON} levels. Furthermore, pseudo-bilayer configurations alleviate the difficulties derived from confining very high opposite carrier concentrations in very thin structures.« less

SU-E-I-25: Determining Tube Current, Tube Voltage and Pitch Suitable for Low- Dose Lung Screening CT

DOE Office of Scientific and Technical Information (OSTI.GOV)

Williams, K; Matthews, K

2014-06-01

Purpose: The quality of a computed tomography (CT) image and the dose delivered during its acquisition depend upon the acquisition parameters used. Tube current, tube voltage, and pitch are acquisition parameters that potentially affect image quality and dose. This study investigated physicians' abilities to characterize small, solid nodules in low-dose CT images for combinations of current, voltage and pitch, for three CT scanner models. Methods: Lung CT images was acquired of a Data Spectrum anthropomorphic torso phantom with various combinations of pitch, tube current, and tube voltage; this phantom was used because acrylic beads of various sizes could be placedmore » within the lung compartments to simulate nodules. The phantom was imaged on two 16-slice scanners and a 64-slice scanner. The acquisition parameters spanned a range of estimated CTDI levels; the CTDI estimates from the acquisition software were verified by measurement. Several experienced radiologists viewed the phantom lung CT images and noted nodule location, size and shape, as well as the acceptability of overall image quality. Results: Image quality for assessment of nodules was deemed unsatisfactory for all scanners at 80 kV (any tube current) and at 35 mA (any tube voltage). Tube current of 50 mA or more at 120 kV resulted in similar assessments from all three scanners. Physician-measured sphere diameters were closer to actual diameters for larger spheres, higher tube current, and higher kV. Pitch influenced size measurements less for larger spheres than for smaller spheres. CTDI was typically overestimated by the scanner software compared to measurement. Conclusion: Based on this survey of acquisition parameters, a low-dose CT protocol of 120 kV, 50 mA, and pitch of 1.4 is recommended to balance patient dose and acceptable image quality. For three models of scanners, this protocol resulted in estimated CTDIs from 2.9–3.6 mGy.« less

Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

NASA Astrophysics Data System (ADS)

Wang, Qingpeng; Jiang, Ying; Miyashita, Takahiro; Motoyama, Shin-ichi; Li, Liuan; Wang, Dejun; Ohno, Yasuo; Ao, Jin-Ping

2014-09-01

GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with recessed gate on AlGaN/GaN heterostructure are reported in which the drain and source ohmic contacts were fabricated on the AlGaN/GaN heterostructure and the electron channel was formed on the GaN buffer layer by removing the AlGaN barrier layer. Negative threshold voltages were commonly observed in all devices. To investigate the reasons of the negative threshold voltages, different oxide thickness, etching gas and bias power of inductively-coupled plasma (ICP) system were utilized in the fabrication process of the GaN MOSFETs. It is found that positive charges of around 1 × 1012 q/cm2 exist near the interface at the just threshold condition in both silane- and tetraethylorthosilicate (TEOS)-based devices. It is also found that the threshold voltages do not obviously change with the different etching gas (SiCl4, BCl3 and two-step etching of SiCl4/Cl2) at the same ICP bias power level (20-25 W) and will become deeper when higher bias power is used in the dry recess process which may be related to the much serious ion bombardment damage. Furthermore, X-ray photoelectron spectroscopy (XPS) experiments were done to investigate the surface conditions. It is found that N 1s peaks become lower with higher bias power of the dry etching process. Also, silicon contamination was found and could be removed by HNO3/HF solution. It indicates that the nitrogen vacancies are mainly responsible for the negative threshold voltages rather than the silicon contamination. It demonstrates that optimization of the ICP recess conditions and improvement of the surface condition are still necessary to realize enhancement-mode GaN MOSFETs on AlGaN/GaN heterostructure.

CONSIDERATIONS FOR FAILURE PREVENTION IN AEROSPACE ELECTRICAL POWER SYSTEMS UTILIZING HIGHER VOLTAGES

DTIC Science & Technology

2017-07-01

work , the guideline document (1) provides a basis for identifying high voltage design risks, (2) defines areas of concern as a function of environment ... work , the guideline document 1) provides a basis for identifying high voltage design risks, 2) defines areas of concern as a function of environment ...pressures (y-axis - breakdown voltage [volts-peak]) As an example of the impact of the aerospace environment , consider the calculation of the safe

First-Principles Study on Cathode Properties of Li2MTiO4 (M = V, Cr, Mn, Fe, Co, and Ni) with Oxygen Deficiency for Li-Ion Batteries

NASA Astrophysics Data System (ADS)

Hamaguchi, Motoyuki; Momida, Hiroyoshi; Oguchi, Tamio

2018-04-01

We study the cathode properties of Li2MTiO4 (M = V, Cr, Mn, Fe, Co, and Ni) for Li-ion batteries by performing first-principles calculations. Formation energies and voltages for Li2-xMTiO4 (0 ≤ x ≤ 2) models with rock-salt-based structures considering several Li concentrations (2 - x) are calculated. Two dominant charge/discharge reaction mechanisms associated with redox reactions of M and O are found mainly in the ranges of lower and higher x, respectively. In the higher-x region, the O redox reactions can destabilize atomic structures, because the electron removal from O-p states produces high peaks at the fermi level in the density of states. The structural stability of O using the models with O deficiency is calculated, and the result shows that O can dissociate much more easily than Li in the higher-x region. The critical Li concentration at which the vacancy formation energy of O becomes lower than that of Li is estimated, and the critical x value decreases with increasing number of 3d electrons as M changes from V to Ni. The calculated voltages of Li2MTiO4 with O deficiency are lower than those without O deficiency, showing that the O dissociation degrades battery performances. Our systematic study for the series of M predicts that Li2CrTiO4 may be the best cathode material considering its cathode properties of high voltage and stability against O dissociation.

Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

DOE PAGES

BastaniNejad, Mahzad; Elmustafa, Abdelmageed A.; Forman, Eric; ...

2015-07-01

DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (~nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>μA) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolishedmore » by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.« less

Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

DOE Office of Scientific and Technical Information (OSTI.GOV)

BastaniNejad, Mahzad; Elmustafa, Abdelmageed A.; Forman, Eric

DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (~nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>μA) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolishedmore » by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.« less

Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

DOE Office of Scientific and Technical Information (OSTI.GOV)

BastaniNejad, Mahzad, E-mail: Mahhzad@gmail.com; Elmustafa, Abdelmageed A.; Forman, Eric

DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (∼nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>μA) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolishedmore » by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The authors speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.« less

Gas discharge visualization evaluation of ultramolecular doses of homeopathic medicines under blinded, controlled conditions.

PubMed

Bell, Iris R; Lewis, Daniel A; Brooks, Audrey J; Lewis, Sabrina E; Schwartz, Gary E

2003-02-01

To determine the feasibility of using a computerized biophysical method, gas discharge visualization (GDV), to differentiate ultramolecular doses of homeopathic remedies from solvent controls and from each other. Blinded, randomized assessment of four split samples each of 30c potencies of three homeopathic remedies from different kingdoms, for example, Natrum muriaticum (mineral), Pulsatilla (plant), and Lachesis (animal), dissolved in a 20% alcohol-water solvent versus two different control solutions (that is, solvent with untreated lactose/sucrose pellets and unsuccussed solvent alone). GDV measurements, involving application of a brief electrical impulse at four different voltage levels, were performed over 10 successive images on each of 10 drops from each bottle (total 400 images per test solution per voltage). The dependent variables were the quantified image characteristics of the liquid drops (form coefficient, area, and brightness) from the resultant burst of electron-ion emission and optical radiation in the visual and ultraviolet ranges. The procedure generated measurable images at the two highest voltage levels. At 17 kV, the remedies exhibited overall lower image parameter values compared with solvents (significant for Pulsatilla and Lachesis), as well as differences from solvents in fluctuations over repeated images (exposures to the same voltage). At 24 kV, other patterns emerged, with individual remedies showing higher or lower image parameters compared with other remedies and the solvent controls. GDV technology may provide an electromagnetic probe into the properties of homeopathic remedies as distinguished from solvent controls. However, the present findings also highlight the need for additional research to evaluate factors that may affect reproducibility of results.

A new very high voltage semiconductor switch

NASA Technical Reports Server (NTRS)

Sundberg, G. R.

1985-01-01

A new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of 10 higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.

ARC and Melting Efficiency of Plasma ARC Welds

NASA Technical Reports Server (NTRS)

McClure, J. C.; Nunes, A. C.; Evans, D. M.

1999-01-01

A series of partial penetration Variable Polarity Plasma Arc welds were made at equal power but various combinations of current and voltage on 2219 Aluminum. Arc efficiency was measured calorimetrically and ranged between 48% and 66% for the conditions of the welds. Arc efficiency depends in different ways on voltage and current. The voltage effect dominates. Raising voltage while reducing current increases arc efficiency. Longer, higher voltage arcs are thought to transfer a greater portion of arc power to the workpiece through shield gas convection. Melting efficiency depends upon weld pool shape as well as arc efficiency. Increased current increases the melting efficiency as it increases the depth to width ratio of the weld pool. Increased plasma gas flow does the same thing. Higher currents are thought to raise arc pressure and depress liquid at the bottom of the weld pool. More arc power then transfers to the workpiece through increasing plasma gas convection. If the power is held constant, the reduced voltage lowers the arc efficiency, while the pool shape change increases the melting efficiency,

Surface interactions and high-voltage current collection

NASA Technical Reports Server (NTRS)

Mandell, M. J.; Katz, I.

1985-01-01

Spacecraft of the future will be larger and have higher power requirements than any flown to date. For several reasons, it is desirable to operate a high power system at high voltage. While the optimal voltages for many future missions are in the range 500 to 5000 volts, the highest voltage yet flown is approximately 100 volts. The NASCAP/LEO code is being developed to embody the phenomenology needed to model the environmental interactions of high voltage spacecraft. Some plasma environment are discussed. The treatment of the surface conductivity associated with emitted electrons and some simulations by NASCAP/LEO of ground based high voltage interaction experiments are described.

Characterization of high-dose and high-energy implanted gate and source diode and analysis of lateral spreading of p gate profile in high voltage SiC static induction transistors

NASA Astrophysics Data System (ADS)

Onose, Hidekatsu; Kobayashi, Yutaka; Onuki, Jin

2017-03-01

The effect of the p gate dose on the characteristics of the gate-source diode in SiC static induction transistors (SIT) was investigated. It was found that a dose of 1.5 × 1014 cm-2 yields a pn junction breakdown voltage higher than 60 V and good forward characteristics. A normally on SiC SIT was fabricated and demonstrated. A blocking voltage higher than 2.0 kV at a gate-source voltage of -50 V and on-resistance of 70 mΩ cm2 were obtained. Device simulations were performed to investigate the effect of the lateral spreading. By comparing the measured I-V curves with simulation results, the lateral spreading factor was estimated to be about 0.5. The lateral spreading detrimentally affected the electrical properties of the SIT made using implantations at energies higher than 1 MeV.

Development of the self-learning machine for creating models of microprocessor of single-phase earth fault protection devices in networks with isolated neutral voltage above 1000 V

NASA Astrophysics Data System (ADS)

Utegulov, B. B.; Utegulov, A. B.; Meiramova, S.

2018-02-01

The paper proposes the development of a self-learning machine for creating models of microprocessor-based single-phase ground fault protection devices in networks with an isolated neutral voltage higher than 1000 V. Development of a self-learning machine for creating models of microprocessor-based single-phase earth fault protection devices in networks with an isolated neutral voltage higher than 1000 V. allows to effectively implement mathematical models of automatic change of protection settings. Single-phase earth fault protection devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abbaszadeh, D.; Wetzelaer, G. A. H.; Dutch Polymer Institute, P.O. Box 902, 5600 AX, Eindhoven

The quenching of excitons at the poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS) anode in blue polyalkoxyspirobifluorene-arylamine polymer light-emitting diodes is investigated. Due to the combination of a higher electron mobility and the presence of electron traps, the recombination zone shifts from the cathode to the anode with increasing voltage. The exciton quenching at the anode at higher voltages leads to an efficiency roll-off. The voltage dependence of the luminous efficiency is reproduced by a drift-diffusion model under the condition that quenching of excitons at the PEDOT:PSS anode and metallic cathode is of equal strength. Experimentally, the efficiency roll-off at high voltages due tomore » anode quenching is eliminated by the use of an electron-blocking layer between the anode and the light-emitting polymer.« less

High-Voltage Characterization for the Prototype Induction Cells

NASA Astrophysics Data System (ADS)

Huacen, Wang; Kaizhi, Zhang; Long, Wen; Qinggui, Lai; Linwen, Zhang; Jianjun, Deng

2002-12-01

Two linear induction prototype cells expected to work at 250kV, 3kA,with accelerating voltage flattop (±1%) ⩾ 70ns, have been tested to determine their high-voltage characteristics. Each cell is composed of a ferrite core immersed in oil, a gap with curved stainless steel electrodes, a solenoid magnet, and a insulator. The experiments were carried out with full-scale cells. The high voltage pulses were applied to two cells using a 100ns, 12Ω pulse Blumlein. The tests were performed at various high-voltage levels ranging from -250kV to -350kV. No breakdown was observed during the test at vacuum level (7-10) ṡ10-4 Pa. The cell schematic, the experimental set up, and the measured voltage waveforms are presented in this paper.

Voltage-dependent calcium-permeable channels in the plasma membrane of a higher plant cell.

PubMed

Thuleau, P; Ward, J M; Ranjeva, R; Schroeder, J I

1994-07-01

Numerous biological assays and pharmacological studies on various higher plant tissues have led to the suggestion that voltage-dependent plasma membrane Ca2+ channels play prominent roles in initiating signal transduction processes during plant growth and development. However, to date no direct evidence has been obtained for the existence of such depolarization-activated Ca2+ channels in the plasma membrane of higher plant cells. Carrot suspension cells (Daucus carota L.) provide a well-suited system to determine whether voltage-dependent Ca2+ channels are present in the plasma membrane of higher plants and to characterize the properties of putative Ca2+ channels. It is known that both depolarization, caused by raising extracellular K+, and exposure to fungal toxins or oligogalacturonides induce Ca2+ influx into carrot cells. By direct application of patch-clamp techniques to isolated carrot protoplasts, we show here that depolarization of the plasma membrane positive to -135 mV activates Ca(2+)-permeable channels. These voltage-dependent ion channels were more permeable to Ca2+ than K+, while displaying large permeabilities to Ba2+ and Mg2+ ions. Ca(2+)-permeable channels showed slow and reversible inactivation. The single-channel conductance was 13 pS in 40 mM CaCl2. These data provide direct evidence for the existence of voltage-dependent Ca2+ channels in the plasma membrane of a higher plant cell and point to physiological mechanisms for plant Ca2+ channel regulation. The depolarization-activated Ca(2+)-permeable channels identified here could constitute a regulated pathway for Ca2+ influx in response to physiologically occurring stimulus-induced depolarizations in higher plant cells.

Left atrial low-voltage areas predict atrial fibrillation recurrence after catheter ablation in patients with paroxysmal atrial fibrillation.

PubMed

Masuda, Masaharu; Fujita, Masashi; Iida, Osamu; Okamoto, Shin; Ishihara, Takayuki; Nanto, Kiyonori; Kanda, Takashi; Tsujimura, Takuya; Matsuda, Yasuhiro; Okuno, Shota; Ohashi, Takuya; Tsuji, Aki; Mano, Toshiaki

2018-04-15

Association between the presence of left atrial low-voltage areas and atrial fibrillation (AF) recurrence after pulmonary vein isolation (PVI) has been shown mainly in persistent AF patients. We sought to compare the AF recurrence rate in paroxysmal AF patients with and without left atrial low-voltage areas. This prospective observational study included 147 consecutive patients undergoing initial ablation for paroxysmal AF. Voltage mapping was performed after PVI during sinus rhythm, and low-voltage areas were defined as regions where bipolar peak-to-peak voltage was <0.50mV. Left atrial low-voltage areas after PVI were observed in 22 (15%) patients. Patients with low-voltage areas were significantly older (72±6 vs. 66±10, p<0.0001), more likely to be female (68% vs. 32%, p=0.002), and had higher CHA 2 DS 2 -VASc score (2.5±1.5 vs. 1.8±1.3, p=0.028). During a mean follow-up of 22 (18, 26) months, AF recurrence was observed in 24 (16%) and 16 (11%) patients after the single and multiple ablation procedures, respectively. AF recurrence rate after multiple ablations was higher in patients with low-voltage areas than without (36% vs. 6%, p<0.001). Low-voltage areas were independently associated with AF recurrence even after adjustment for the other related factors (Hazard ratio, 5.89; 95% confidence interval, 2.16 to 16.0, p=0.001). The presence of left atrial low-voltage areas after PVI predicts AF recurrence in patients with paroxysmal AF as well as in patients with persistent AF. Copyright © 2017 Elsevier B.V. All rights reserved.

Network topology and resilience analysis of South Korean power grid

NASA Astrophysics Data System (ADS)

Kim, Dong Hwan; Eisenberg, Daniel A.; Chun, Yeong Han; Park, Jeryang

2017-01-01

In this work, we present topological and resilience analyses of the South Korean power grid (KPG) with a broad voltage level. While topological analysis of KPG only with high-voltage infrastructure shows an exponential degree distribution, providing another empirical evidence of power grid topology, the inclusion of low voltage components generates a distribution with a larger variance and a smaller average degree. This result suggests that the topology of a power grid may converge to a highly skewed degree distribution if more low-voltage data is considered. Moreover, when compared to ER random and BA scale-free networks, the KPG has a lower efficiency and a higher clustering coefficient, implying that highly clustered structure does not necessarily guarantee a functional efficiency of a network. Error and attack tolerance analysis, evaluated with efficiency, indicate that the KPG is more vulnerable to random or degree-based attacks than betweenness-based intentional attack. Cascading failure analysis with recovery mechanism demonstrates that resilience of the network depends on both tolerance capacity and recovery initiation time. Also, when the two factors are fixed, the KPG is most vulnerable among the three networks. Based on our analysis, we propose that the topology of power grids should be designed so the loads are homogeneously distributed, or functional hubs and their neighbors have high tolerance capacity to enhance resilience.

Effects of Electrode Material on the Voltage of a Tree-Based Energy Generator.

PubMed

Hao, Zhibin; Wang, Guozhu; Li, Wenbin; Zhang, Junguo; Kan, Jiangming

2015-01-01

The voltage between a standing tree and its surrounding soil is regarded as an innovative renewable energy source. This source is expected to provide a new power generation system for the low-power electrical equipment used in forestry. However, the voltage is weak, which has caused great difficulty in application. Consequently, the development of a method to increase the voltage is a key issue that must be addressed in this area of applied research. As the front-end component for energy harvesting, a metal electrode has a material effect on the level and stability of the voltage obtained. This study aimed to preliminarily ascertain the rules and mechanisms that underlie the effects of electrode material on voltage. Electrodes of different materials were used to measure the tree-source voltage, and the data were employed in a comparative analysis. The results indicate that the conductivity of the metal electrode significantly affects the contact resistance of the electrode-soil and electrode-trunk contact surfaces, thereby influencing the voltage level. The metal reactivity of the electrode has no significant effect on the voltage. However, passivation of the electrode materials markedly reduces the voltage. Suitable electrode materials are demonstrated and recommended.

Poole-Frenkel effect in sputter-deposited CuAlO2+x nanocrystals

NASA Astrophysics Data System (ADS)

Narayan Banerjee, Arghya; Joo, Sang Woo

2013-04-01

Field-assisted thermionic emission within a sputter-deposited, nanocrystalline thin film of CuAlO2.06 is observed for the first time, and explained in terms of the Poole-Frenkel model. The presence of adsorbed oxygen ions as trap-states at the grain boundary regions of the nanostructured thin film is considered to manifest this phenomenon. Under an applied field, the barrier of the trap potential is lowered and thermal emission of charge carriers takes place at different sample temperatures to induce nonlinearity in the current (I)-voltage (V) characteristics of the nanomaterial. Fitting of the Poole-Frenkel model with the I-V data shows that the nonlinearity is effective above 50 V under the operating conditions. Calculations of the energy of the trap level, acceptor level and Fermi level reveal the existence of deep level trap-states and a shallow acceptor level with acceptor concentration considerably higher than the trap-states. Hall measurements confirm the p-type semiconductivity of the film, with a hole concentration around 1018 cm-3. Thermopower measurements give a room-temperature Seebeck coefficient around 130 μV K-1. This temperature-dependent conductivity enhancement within CuAlO2 nanomaterial may find interesting applications in transparent electronics and high-voltage applications for power supply networks.

Poole-Frenkel effect in sputter-deposited CuAlO(2+x) nanocrystals.

PubMed

Banerjee, Arghya Narayan; Joo, Sang Woo

2013-04-26

Field-assisted thermionic emission within a sputter-deposited, nanocrystalline thin film of CuAlO2.06 is observed for the first time, and explained in terms of the Poole-Frenkel model. The presence of adsorbed oxygen ions as trap-states at the grain boundary regions of the nanostructured thin film is considered to manifest this phenomenon. Under an applied field, the barrier of the trap potential is lowered and thermal emission of charge carriers takes place at different sample temperatures to induce nonlinearity in the current (I)-voltage (V) characteristics of the nanomaterial. Fitting of the Poole-Frenkel model with the I-V data shows that the nonlinearity is effective above 50 V under the operating conditions. Calculations of the energy of the trap level, acceptor level and Fermi level reveal the existence of deep level trap-states and a shallow acceptor level with acceptor concentration considerably higher than the trap-states. Hall measurements confirm the p-type semiconductivity of the film, with a hole concentration around 10(18) cm(-3). Thermopower measurements give a room-temperature Seebeck coefficient around 130 μV K(-1). This temperature-dependent conductivity enhancement within CuAlO2 nanomaterial may find interesting applications in transparent electronics and high-voltage applications for power supply networks.

Performance improvement of doped TFET by using plasma formation concept

NASA Astrophysics Data System (ADS)

Soni, Deepak; Sharma, Dheeraj; Yadav, Shivendra; Aslam, Mohd.; Sharma, Neeraj

2018-01-01

Formation of abrupt doping profile at tunneling junction for the nanoscale tunnel field effect transistor (TFET) is a critical issue for attaining improved electrical behaviour. The realization of abrupt doping profile is more difficult in the case of physically doped TFETs due to material solubility limit. In this concern, we propose a novel design of TFET. For this, P+ (source)-I (channel)-N (drain) type structure has been considered, wherein a metal electrode is deposited over the source region. In addition to this, a negative voltage is applied to the source electrode (SE). It induces the surface plasma layer of holes in the source region, which is responsible for steepness in the bands at source/channel junction and provides the advantage of higher doping in source region without any addition of the physical impurity. The proposed modification is helpful for achieving steeper band bending at the source/channel interface, which enables higher tunneling generation rate of charge carriers at this interface and overcomes the issue of low ON-state current. Thus, the proposed device shows the increment of 2 decades in drain current and 252 mV reduction in threshold voltage compared with conventional device. The optimization of spacer length (LSG) between source/gate (LSG) and applied negative voltage (Vpg) over source electrode have been performed to obtain optimum drain current and threshold voltage (Vth). Further, for the suppression of ambipolar current, drain region is kept lightly doped, which reduces the ambipolar current up to level of Off state current. Moreover, in the proposed device gate electrode is underlapped for improving RF performance. It also reduces gate to drain capacitances (Cgd) and increases cut-off-frequency (fT), fmax, GBP, TFP. In addition to these, linearity analysis has been performed to validate the applicability of the device.

Bilayer-Spanning DNA Nanopores with Voltage-Switching between Open and Closed State

PubMed Central

2014-01-01

Membrane-spanning nanopores from folded DNA are a recent example of biomimetic man-made nanostructures that can open up applications in biosensing, drug delivery, and nanofluidics. In this report, we generate a DNA nanopore based on the archetypal six-helix-bundle architecture and systematically characterize it via single-channel current recordings to address several fundamental scientific questions in this emerging field. We establish that the DNA pores exhibit two voltage-dependent conductance states. Low transmembrane voltages favor a stable high-conductance level, which corresponds to an unobstructed DNA pore. The expected inner width of the open channel is confirmed by measuring the conductance change as a function of poly(ethylene glycol) (PEG) size, whereby smaller PEGs are assumed to enter the pore. PEG sizing also clarifies that the main ion-conducting path runs through the membrane-spanning channel lumen as opposed to any proposed gap between the outer pore wall and the lipid bilayer. At higher voltages, the channel shows a main low-conductance state probably caused by electric-field-induced changes of the DNA pore in its conformation or orientation. This voltage-dependent switching between the open and closed states is observed with planar lipid bilayers as well as bilayers mounted on glass nanopipettes. These findings settle a discrepancy between two previously published conductances. By systematically exploring a large space of parameters and answering key questions, our report supports the development of DNA nanopores for nanobiotechnology. PMID:25338165

Bilayer-spanning DNA nanopores with voltage-switching between open and closed state.

PubMed

Seifert, Astrid; Göpfrich, Kerstin; Burns, Jonathan R; Fertig, Niels; Keyser, Ulrich F; Howorka, Stefan

2015-02-24

Membrane-spanning nanopores from folded DNA are a recent example of biomimetic man-made nanostructures that can open up applications in biosensing, drug delivery, and nanofluidics. In this report, we generate a DNA nanopore based on the archetypal six-helix-bundle architecture and systematically characterize it via single-channel current recordings to address several fundamental scientific questions in this emerging field. We establish that the DNA pores exhibit two voltage-dependent conductance states. Low transmembrane voltages favor a stable high-conductance level, which corresponds to an unobstructed DNA pore. The expected inner width of the open channel is confirmed by measuring the conductance change as a function of poly(ethylene glycol) (PEG) size, whereby smaller PEGs are assumed to enter the pore. PEG sizing also clarifies that the main ion-conducting path runs through the membrane-spanning channel lumen as opposed to any proposed gap between the outer pore wall and the lipid bilayer. At higher voltages, the channel shows a main low-conductance state probably caused by electric-field-induced changes of the DNA pore in its conformation or orientation. This voltage-dependent switching between the open and closed states is observed with planar lipid bilayers as well as bilayers mounted on glass nanopipettes. These findings settle a discrepancy between two previously published conductances. By systematically exploring a large space of parameters and answering key questions, our report supports the development of DNA nanopores for nanobiotechnology.

Adjustable, High Voltage Pulse Generator with Isolated Output for Plasma Processing

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth E.; Prager, James; Slobodov, Ilia

2015-09-01

Eagle Harbor Technologies (EHT), Inc. has developed a high voltage pulse generator with isolated output for etch, sputtering, and ion implantation applications within the materials science and semiconductor processing communities. The output parameters are independently user adjustable: output voltage (0 - 2.5 kV), pulse repetition frequency (0 - 100 kHz), and duty cycle (0 - 100%). The pulser can drive loads down to 200 Ω. Higher voltage pulsers have also been tested. The isolated output allows the pulse generator to be connected to loads that need to be biased. These pulser generators take advantage modern silicon carbide (SiC) MOSFETs. These new solid-state switches decrease the switching and conduction losses while allowing for higher switching frequency capabilities. This pulse generator has applications for RF plasma heating; inductive and arc plasma sources; magnetron driving; and generation of arbitrary pulses at high voltage, high current, and high pulse repetition frequency. This work was supported in part by a DOE SBIR.

Reliable low-cost battery voltage indicator for light aircraft and automobiles

NASA Technical Reports Server (NTRS)

Miller, R. L.

1973-01-01

Voltage indicator fits into cigarette lighter socket and utilizes light emitting and Zener diodes to display three levels of battery voltage. Indicator is superior to typical conventional electrical system indicators in that it gives a positive discrete indication of battery voltage. It is simple, inexpensive, and rugged.

AC to DC Bridgeless Boost Converter for Ultra Low Input Energy Harvesting

NASA Astrophysics Data System (ADS)

Dawam, A. H. A.; Muhamad, M.

2018-03-01

This paper presents design of circuit which converts low input AC voltage to a higher output DC voltage. A buck-boost topology and boost topology are combined to condition cycle of an AC input voltage. the unique integration of a combining circuit of buck-boost and boost circuit have been proposed in order to introduce a new direct ac-dc power converter topology without conventional diode bridge rectifier. The converter achieved to convert a milli-volt scale of input AC voltage into a volt scale of output DC voltages which is from 400mV to 3.3V.

The strain capacitor: A novel energy storage device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deb Shuvra, Pranoy; McNamara, Shamus, E-mail: shamus.mcnamara@louisville.edu

2014-12-15

A novel electromechanical energy storage device is reported that has the potential to have high energy densities. It can efficiently store both mechanical strain energy and electrical energy in the form of an electric field between the electrodes of a strain-mismatched bilayer capacitor. When the charged device is discharged, both the electrical and mechanical energy are extracted in an electrical form. The charge-voltage profile of the device is suitable for energy storage applications since a larger portion of the stored energy can be extracted at higher voltage levels compared to a normal capacitor. Its unique features include the potential formore » long lifetime, safety, portability, wide operating temperature range, and environment friendliness. The device can be designed to operate over varied operating voltage ranges by selecting appropriate materials and by changing the dimensions of the device. In this paper a finite element model of the device is developed to verify and demonstrate the potential of the device as an energy storage element. This device has the potential to replace conventional energy storage devices.« less

Effect of Voltage Level on Power System Design for Solar Electric Propulsion Missions

NASA Technical Reports Server (NTRS)

Kerslake, Thomas W.

2003-01-01

This paper presents study results quantifying the benefits of higher voltage, electric power system designs for a typical solar electric propulsion spacecraft Earth orbiting mission. A conceptual power system architecture was defined and design points were generated for system voltages of 28-V, 50-V, 120-V, and 300-V using state-of-the-art or advanced technologies. A 300-V 'direct-drive' architecture was also analyzed to assess the benefits of directly powering the electric thruster from the photovoltaic array without up-conversion. Fortran and spreadsheet computational models were exercised to predict the performance and size power system components to meet spacecraft mission requirements. Pertinent space environments, such as electron and proton radiation, were calculated along the spiral trajectory. In addition, a simplified electron current collection model was developed to estimate photovoltaic array losses for the orbital plasma environment and that created by the thruster plume. The secondary benefits of power system mass savings for spacecraft propulsion and attitude control systems were also quantified. Results indicate that considerable spacecraft wet mass savings were achieved by the 300-V and 300-V direct-drive architectures.

Clinical utility of seropositive voltage-gated potassium channel-complex antibody.

PubMed

Jammoul, Adham; Shayya, Luay; Mente, Karin; Li, Jianbo; Rae-Grant, Alexander; Li, Yuebing

2016-10-01

Antibodies against voltage-gated potassium channel (VGKC)-complex are implicated in the pathogenesis of acquired neuromyotonia, limbic encephalitis, faciobrachial dystonic seizure, and Morvan syndrome. Outside these entities, the clinical value of VGKC-complex antibodies remains unclear. We conducted a single-center review of patients positive for VGKC-complex antibodies over an 8-year period. Among 114 patients positive for VGKC-complex antibody, 11 (9.6%) carrying the diagnosis of limbic encephalitis (n = 9) or neuromyotonia (n = 2) constituted the classic group, and the remaining 103 cases of various neurologic and non-neurologic disorders comprised the nonclassic group. The median titer for the classic group was higher than the nonclassic group ( p < 0.0001). A total of 90.9% of the patients in the classic and 21.4% in the nonclassic group possessed high (>0.25 nM) VGKC-complex antibody levels ( p < 0.0001). A total of 75.0% of the patients in the high-level group had definite or probable autoimmune basis, while nonautoimmune disorders were seen in 75.6% of patients from the low-level group ( p < 0.0001). A total of 26.3% of patients were found with active or remote solid organ or hematologic malignancy, but no antibody titer difference was observed among subgroups of absent, active, or remote malignancy. Compared to age-matched US national census, rates of active cancer in our cohort were higher in patients older than 45 years. High VGKC-complex antibody titers are more likely found in patients with classically associated syndromes and other autoimmune conditions. Low-level VGKC-complex antibodies can be detected in nonspecific and mostly nonautoimmune disorders. The presence of VGKC-complex antibody, rather than its level, may serve as a marker of malignancy.

Clinical utility of seropositive voltage-gated potassium channel–complex antibody

PubMed Central

Jammoul, Adham; Shayya, Luay; Mente, Karin; Li, Jianbo; Rae-Grant, Alexander

2016-01-01

Abstract Background: Antibodies against voltage-gated potassium channel (VGKC)–complex are implicated in the pathogenesis of acquired neuromyotonia, limbic encephalitis, faciobrachial dystonic seizure, and Morvan syndrome. Outside these entities, the clinical value of VGKC-complex antibodies remains unclear. Methods: We conducted a single-center review of patients positive for VGKC-complex antibodies over an 8-year period. Results: Among 114 patients positive for VGKC-complex antibody, 11 (9.6%) carrying the diagnosis of limbic encephalitis (n = 9) or neuromyotonia (n = 2) constituted the classic group, and the remaining 103 cases of various neurologic and non-neurologic disorders comprised the nonclassic group. The median titer for the classic group was higher than the nonclassic group (p < 0.0001). A total of 90.9% of the patients in the classic and 21.4% in the nonclassic group possessed high (>0.25 nM) VGKC-complex antibody levels (p < 0.0001). A total of 75.0% of the patients in the high-level group had definite or probable autoimmune basis, while nonautoimmune disorders were seen in 75.6% of patients from the low-level group (p < 0.0001). A total of 26.3% of patients were found with active or remote solid organ or hematologic malignancy, but no antibody titer difference was observed among subgroups of absent, active, or remote malignancy. Compared to age-matched US national census, rates of active cancer in our cohort were higher in patients older than 45 years. Conclusions: High VGKC-complex antibody titers are more likely found in patients with classically associated syndromes and other autoimmune conditions. Low-level VGKC-complex antibodies can be detected in nonspecific and mostly nonautoimmune disorders. The presence of VGKC-complex antibody, rather than its level, may serve as a marker of malignancy. PMID:27847683

NiH2 Battery Reconditioning for LEO Applications

NASA Technical Reports Server (NTRS)

Armantrout, J. D.; Hafen, D. P.

1997-01-01

This paper summarizes reasons for and benefits of reconditioning nickel-hydrogen (NiH2) batteries used for Low Earth Orbit (LEO) applications. NiH2 battery cells do not have the classic discharge voltage problems more commonly associated with nickel-cadmium (NiCd) cells. This is due, in part, to use of hydrogen electrodes in place of cadmium electrodes. The nickel electrode, however, does have a similar discharge voltage signature for both cell designs. This can have an impact on LEO applications where peak loads at higher relative depths of discharge can impact operations. Periodic reconditioning provides information which can be used for analyzing long term performance trends to predict usable capacity to a specified voltage level. The reconditioning process described herein involves discharging NiH2 batteries at C/20 rates or less, to an average cell voltage of 1.0 volts or less. Recharge is performed at nominal C/5 rates to specified voltage/temperature (V/T) charge levels selected to restore required capacity with minimal overcharge. Reconditioning is a process of restoring reserve capacity lost on cycling, which is commonly called the memory effect in NiCd cells. This effect is characterized by decreases in the discharge voltage curve with operational life and cycling. The end effect of reconditioning NiH2 cells may be hidden in the versatility, of that design over the NiCd cell design and its associated negative electrode fading problem. The process of deep discharge at lower rates by way of reconditioning tends to redistribute electrolyte and water in the NiH2 cell electrode stack, while improving utilization and charge efficiency. NiH2 battery reconditioning effects on life are considered beneficial and may, in fact. extend life based on NiCd experience. In any case, usable capacity data obtained from reconditioning is required for performance evaluation and trend analysis. Characterization and life tests have provided the historical data base used to determine the need for reconditioning in most battery applications. The following sections briefly describe the background of NiH2 battery reconditioning and testing at Lockheed Martin Missiles & Space (LMMS) and other aerospace companies.

High Performance Power Module for Hall Effect Thrusters

NASA Technical Reports Server (NTRS)

Pinero, Luis R.; Peterson, Peter Y.; Bowers, Glen E.

2002-01-01

Previous efforts to develop power electronics for Hall thruster systems have targeted the 1 to 5 kW power range and an output voltage of approximately 300 V. New Hall thrusters are being developed for higher power, higher specific impulse, and multi-mode operation. These thrusters require up to 50 kW of power and a discharge voltage in excess of 600 V. Modular power supplies can process more power with higher efficiency at the expense of complexity. A 1 kW discharge power module was designed, built and integrated with a Hall thruster. The breadboard module has a power conversion efficiency in excess of 96 percent and weighs only 0.765 kg. This module will be used to develop a kW, multi-kW, and high voltage power processors.

Characterization of Low Noise, Precision Voltage Reference REF5025-HT Under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2010-01-01

The performance of Texas Instruments precision voltage reference REF5025-HT was assessed under extreme temperatures. This low noise, 2.5 V output chip is suitable for use in high temperature down-hole drilling applications, but no data existed on its performance at cryogenic temperatures. The device was characterized in terms of output voltage and supply current at different input voltage levels as a function of temperature between +210 C and -190 C. Line and load regulation characteristics were also established at six load levels and at different temperatures. Restart capability at extreme temperatures and the effects of thermal cycling, covering the test temperature range, on its operation and stability were also investigated. Under no load condition, the voltage reference chip exhibited good stability in its output over the temperature range of -50 C to +200 C. Outside that temperature range, output voltage did change as temperature was changed. For example, at the extreme temperatures of +210 C and - 190 C, the output level dropped to 2.43 V and 2.32 V, respectively as compared to the nominal value of 2.5 V. At cryogenic test temperatures of -100 C and -150 C the output voltage dropped by about 20%. The quiescent supply current of the voltage reference varied slightly with temperature but remained close to its specified value. In terms of line regulation, the device exhibited excellent stability between -50 C and +150 C over the entire input voltage range and load levels. At the other test temperatures, however, while line regulation became poor at cryogenic temperatures of -100 C and below, it suffered slight degradation at the extreme high temperature but only at the high load level of 10 mA. The voltage reference also exhibited very good load regulation with temperature down to -100 C, but its output dropped sharply at +210 C only at the heavy load of 10 mA. The semiconductor chip was able restart at the extreme temperatures of -190 C and +210 C, and the limited thermal cycling did not influence its characteristics and had no impact on its packaging as no structural or physical damage was observed.

Deviation from Boltzmann distribution in excited energy levels of singly-ionized iron in an argon glow discharge plasma for atomic emission spectrometry

NASA Astrophysics Data System (ADS)

Zhang, Lei; Kashiwakura, Shunsuke; Wagatsuma, Kazuaki

2012-01-01

A Boltzmann plot for many iron ionic lines having excitation energies of 4.7-9.1 eV was investigated in an argon glow discharge plasma when the discharge parameters, such as the voltage/current and the gas pressure, were varied. A Grimm-style radiation source was employed in a DC voltage range of 400-800 V at argon pressures of 400-930 Pa. The plot did not follow a linear relationship over a wide range of the excitation energy, but it yielded a normal Boltzmann distribution in the range of 4.7-5.8 eV and a large overpopulation in higher-lying excitation levels of iron ion. A probable reason for this phenomenon is that excitations for higher excited energy levels of iron ion would be predominantly caused by non-thermal collisions with argon species, the internal energy of which is received by iron atoms for the ionization. Particular intense ionic lines, which gave a maximum peak of the Boltzmann plot, were observed at an excitation energy of ca. 7.7 eV. They were the Fe II 257.297-nm and the Fe II 258.111-nm lines, derived from the 3d54s4p 6P excited levels. The 3d54s4p 6P excited levels can be highly populated through a resonance charge transfer from the ground state of argon ion, because of good matching in the excitation energy as well as the conservation of the total spin before and after the collision. An enhancement factor of the emission intensity for various Fe II lines could be obtained from a deviation from the normal Boltzmann plot, which comprised the emission lines of 4.7-5.8 eV. It would roughly correspond to a contribution of the charge transfer excitation to the excited levels of iron ion, suggesting that the charge-transfer collision could elevate the number density of the corresponding excited levels by a factor of ca.104. The Boltzmann plots give important information on the reason why a variety of iron ionic lines can be emitted from glow discharge plasmas.

High Voltage Hybrid Electric Propulsion - Multilayered Functional Insulation System (MFIS) NASA-GRC

NASA Technical Reports Server (NTRS)

Lizcano, M.

2017-01-01

High power transmission cables pose a key challenge in future Hybrid Electric Propulsion Aircraft. The challenge arises in developing safe transmission lines that can withstand the unique environment found in aircraft while providing megawatts of power. High voltage AC, variable frequency cables do not currently exist and present particular electrical insulation challenges since electrical arcing and high heating are more prevalent at higher voltages and frequencies. Identifying and developing materials that maintain their dielectric properties at high voltage and frequencies is crucial.

Dielectric Characteristics of Oil filled Transformer under Non-standard Lightning Surge Waveforms

NASA Astrophysics Data System (ADS)

Okabe, Shigemitsu; Kawashima, Takeshi; Inoue, Tamotsu; Teranishi, Tsuneharu; Nagaoka, Satoshi

To achieve a rational insulation design for transformers, it is important to evaluate dielectric strength against actually impinging on equipment on-site This paper deals with the dielectric characteristics of a turn-to-turn insulation model for oil filled transformer under non-standard lightning surge waveforms combined with oscillatory voltage. As the results‚ the breakdown voltages and the partial discharge inception voltages of a turn-to-turn insulation model under non-standard impulse wave forms are higher than standard impulse voltages.

78 FR 23335 - Energy Conservation Program: Energy Conservation Standards for Distribution Transformers

Federal Register 2010, 2011, 2012, 2013, 2014

2013-04-18

... Basic Impulse Level 4. Dual/Multiple-Voltage Primary Windings 5. Dual/Multiple-Voltage Secondary Windings 6. Loading B. Technological Feasibility 1. General 2. Maximum Technologically Feasible Levels C...

SSP Technology Investigation of a High-Voltage DC-DC Converter

NASA Technical Reports Server (NTRS)

Pappas, J. A.; Grady, W. M.; George, Patrick J. (Technical Monitor)

2002-01-01

The goal of this project was to establish the feasibility of a high-voltage DC-DC converter based on a rod-array triggered vacuum switch (RATVS) for the Space Solar Power system. The RATVS has many advantages over silicon and silicon-carbide devices. The RATVS is attractive for this application because it is a high-voltage device that has already been demonstrated at currents in excess of the requirement for an SSP device and at much higher per-device voltages than existing or near-term solid state switching devices. The RATVS packs a much higher specific power rating than any solid-state device and it is likely to be more tolerant of its surroundings in space. In addition, pursuit of an RATVS-based system would provide NASA with a nearer-term and less expensive power converter option for the SSP.

Electronic Transport Properties of One Dimensional Zno Nanowires Studied Using Maximally-Localized Wannier Functions

NASA Astrophysics Data System (ADS)

Sun, Xu; Gu, Yousong; Wang, Xueqiang

2012-08-01

One dimensional ZnO NWs with different diameters and lengths have been investigated using density functional theory (DFT) and Maximally Localized Wannier Functions (MLWFs). It is found that ZnO NWs are direct band gap semiconductors and there exist a turn on voltage for observable current. ZnO nanowires with different diameters and lengths show distinctive turn-on voltage thresholds in I-V characteristics curves. The diameters of ZnO NWs are greatly influent the transport properties of ZnO NWs. For the ZnO NW with large diameter that has more states and higher transmission coefficients leads to narrow band gap and low turn on voltage. In the case of thinner diameters, the length of ZnO NW can effects the electron tunneling and longer supercell lead to higher turn on voltage.

Effect of actuating voltage and discharge gap on plasma assisted detonation initiation process

NASA Astrophysics Data System (ADS)

Siyin, ZHOU; Xueke, CHE; Wansheng, NIE; Di, WANG

2018-06-01

The influence of actuating voltage and discharge gap on plasma assisted detonation initiation by alternating current dielectric barrier discharge was studied in detail. A loose coupling method was used to simulate the detonation initiation process of a hydrogen–oxygen mixture in a detonation tube under different actuating voltage amplitudes and discharge gap sizes. Both the discharge products and the detonation forming process assisted by the plasma were analyzed. It was found that the patterns of the temporal and spatial distributions of discharge products in one cycle keep unchanged as changing the two discharge operating parameters. However, the adoption of a higher actuating voltage leads to a higher active species concentration within the discharge zone, and atom H is the most sensitive to the variations of the actuating voltage amplitude among the given species. Adopting a larger discharge gap results in a lower concentration of the active species, and all species have the same sensitivity to the variations of the gap. With respect to the reaction flow of the detonation tube, the corresponding deflagration to detonation transition (DDT) time and distance become slightly longer when a higher actuating voltage is chosen. The acceleration effect of plasma is more prominent with a smaller discharge gap, and the benefit builds gradually throughout the DDT process. Generally, these two control parameters have little effect on the amplitude of the flow field parameters, and they do not alter the combustion degree within the reaction zone.

Modeling, Development and Control of Multilevel Converters for Power System Application =

NASA Astrophysics Data System (ADS)

Vahedi, Hani

The main goal of this project is to develop a multilevel converter topology to be useful in power system applications. Although many topologies are introduced rapidly using a bunch of switches and isolated dc sources, having a single-dc-source multilevel inverter is still a matter of controversy. In fact, each isolated dc source means a bulky transformer and a rectifier that have their own losses and costs forcing the industries to avoid entering in this topic conveniently. On the other hand, multilevel inverters topologies with single-dc-source require associated controllers to regulate the dc capacitors voltages in order to have multilevel voltage waveform at the output. Thus, a complex controller would not interest investors properly. Consequently, developing a single-dc-source multilevel inverter topology along with a light and reliable voltage control is still a challenging topic to replace the 2-level inverters in the market effectively. The first effort in this project was devoted to the PUC7 inverter to design a simple and yet efficient controller. A new modelling is performed on the PUC7 inverter and it has been simplified to first order system. Afterwards, a nonlinear cascaded controller is designed and applied to regulate the capacitor voltage at 1/3 of the DC source amplitude and to generate 7 identical voltage levels at the output supplying different type of loads such as RL or rectifier harmonic ones. In next work, the PUC5 topology is proposed as a remedy to the PUC7 that requires a complicated controller to operate properly. The capacitor voltage is regulated at half of dc source amplitude to generate 5 voltage levels at the output. Although the 7-level voltage waveform is replaced by a 5-level one in PUC5 topology, it is shown that the PUC5 needs a very simple and reliable voltage balancing technique due to having some redundant switching states. Moreover, a sensor-less voltage balancing technique is designed and implemented on the PUC5 inverter successfully to work in both stand-alone and gridconnected mode of operation. Eventually, a modified configuration of the PUC5 topology is presented to work as a buck PFC rectifier. The internal performance of the rectifier is like a buck converter to generate stepped down DC voltages at the two output terminals while the grid sees a boost converter externally. As well, a decoupled voltage/current controller is designed and applied to balance the output voltages identically and synchronize the input current with grid voltage to have a PFC operation acceptably. A power balance analysis is done to show the load variation range limit. All the theoretical and simulation studies are validated by experimental results completely.

Frequency pulling in a low-voltage medium-power gyrotron

NASA Astrophysics Data System (ADS)

Luo, Li; Du, Chao-Hai; Huang, Ming-Guang; Liu, Pu-Kun

2018-04-01

Many recent biomedical applications use medium-power frequency-tunable terahertz (THz) sources, such as sensitivity-enhanced nuclear magnetic resonance, THz imaging, and biomedical treatment. As a promising candidate, a low-voltage gyrotron can generate watt-level, continuous THz-wave radiation. In particular, the frequency-pulling effect in a gyrotron, namely, the effect of the electron beam parameters on the oscillation frequency, can be used to tune the operating frequency. Most previous investigations used complicated and time-consuming gyrotron nonlinear theory to study the influence of many beam parameters on the interaction performance. While gyrotron linear theory investigation demonstrates the advantages of rapidly and clearly revealing the physical influence of individual key beam parameters on the overall system performance, this paper demonstrates systematically the use of gyrotron linear theory to study the frequency-pulling effect in a low-voltage gyrotron with either a Gaussian or a sinusoidal axial-field profile. Furthermore, simulations of a gyrotron operating in the first axial mode are carried out in the framework of nonlinear theory as a contrast. Close agreement is achieved between the two theories. Besides, some interesting results are obtained. In a low-current sinusoidal-profile cavity, the ranges of frequency variation for different axial modes are isolated from each other, and the frequency tuning bandwidth for each axial mode increases by increasing either the beam voltage or pitch factor. Lowering the voltage, the total tuning ranges are squeezed and become concentrated. However, the isolated frequency regions of each axial mode cannot be linked up unless the beam current is increased, meaning that higher current operation is the key to achieving a wider and continuous tuning frequency range. The results presented in this paper can provide a reference for designing a broadband low-voltage gyrotron.

Ion detection device and method with compressing ion-beam shutter

DOEpatents

Sperline, Roger P [Tucson, AZ

2009-05-26

An ion detection device, method and computer readable medium storing instructions for applying voltages to shutter elements of the detection device to compress ions in a volume defined by the shutter elements and to output the compressed ions to a collector. The ion detection device has a chamber having an inlet and receives ions through the inlet, a shutter provided in the chamber opposite the inlet and configured to allow or prevent the ions to pass the shutter, the shutter having first and second shutter elements, a collector provided in the chamber opposite the shutter and configured to collect ions passed through the shutter, and a processing unit electrically connected to the first and second shutter elements. The processing unit applies, during a first predetermined time interval, a first voltage to the first shutter element and a second voltage to the second shutter element, the second voltage being lower than the first voltage such that ions from the inlet enter a volume defined by the first and second shutter elements, and during a second predetermined time interval, a third voltage to the first shutter element, higher than the first voltage, and a fourth voltage to the second shutter element, the third voltage being higher than the fourth voltage such that ions that entered the volume are compressed as the ions exit the volume and new ions coming from the inlet are prevented from entering the volume. The processing unit is electrically connected to the collector and configured to detect the compressed ions based at least on a current received from the collector and produced by the ions collected by the collector.

Architecture, Voltage, and Components for a Turboelectric Distributed Propulsion Electric Grid

NASA Technical Reports Server (NTRS)

Armstrong, Michael J.; Blackwelder, Mark; Bollman, Andrew; Ross, Christine; Campbell, Angela; Jones, Catherine; Norman, Patrick

2015-01-01

The development of a wholly superconducting turboelectric distributed propulsion system presents unique opportunities for the aerospace industry. However, this transition from normally conducting systems to superconducting systems significantly increases the equipment complexity necessary to manage the electrical power systems. Due to the low technology readiness level (TRL) nature of all components and systems, current Turboelectric Distributed Propulsion (TeDP) technology developments are driven by an ambiguous set of system-level electrical integration standards for an airborne microgrid system (Figure 1). While multiple decades' worth of advancements are still required for concept realization, current system-level studies are necessary to focus the technology development, target specific technological shortcomings, and enable accurate prediction of concept feasibility and viability. An understanding of the performance sensitivity to operating voltages and an early definition of advantageous voltage regulation standards for unconventional airborne microgrids will allow for more accurate targeting of technology development. Propulsive power-rated microgrid systems necessitate the introduction of new aircraft distribution system voltage standards. All protection, distribution, control, power conversion, generation, and cryocooling equipment are affected by voltage regulation standards. Information on the desired operating voltage and voltage regulation is required to determine nominal and maximum currents for sizing distribution and fault isolation equipment, developing machine topologies and machine controls, and the physical attributes of all component shielding and insulation. Voltage impacts many components and system performance.

Pulse circuit apparatus for gas discharge laser

DOEpatents

Bradley, Laird P.

1980-01-01

Apparatus and method using a unique pulse circuit for a known gas discharge laser apparatus to provide an electric field for preconditioning the gas below gas breakdown and thereafter to place a maximum voltage across the gas which maximum voltage is higher than that previously available before the breakdown voltage of that gas laser medium thereby providing greatly increased pumping of the laser.

Voltage Impacts of Utility-Scale Distributed Wind

DOE Office of Scientific and Technical Information (OSTI.GOV)

Allen, A.

2014-09-01

Although most utility-scale wind turbines in the United States are added at the transmission level in large wind power plants, distributed wind power offers an alternative that could increase the overall wind power penetration without the need for additional transmission. This report examines the distribution feeder-level voltage issues that can arise when adding utility-scale wind turbines to the distribution system. Four of the Pacific Northwest National Laboratory taxonomy feeders were examined in detail to study the voltage issues associated with adding wind turbines at different distances from the sub-station. General rules relating feeder resistance up to the point of turbinemore » interconnection to the expected maximum voltage change levels were developed. Additional analysis examined line and transformer overvoltage conditions.« less

APPARATUS FOR REGULATING HIGH VOLTAGE

DOEpatents

Morrison, K.G.

1951-03-20

This patent describes a high-voltage regulator of the r-f type wherein the modulation of the r-f voltage is accomplished at a high level, resulting in good stabilization over a large range of load conditions.

Accuracy of iodine quantification in dual-layer spectral CT: Influence of iterative reconstruction, patient habitus and tube parameters.

PubMed

Sauter, Andreas P; Kopp, Felix K; Münzel, Daniela; Dangelmaier, Julia; Renz, Martin; Renger, Bernhard; Braren, Rickmer; Fingerle, Alexander A; Rummeny, Ernst J; Noël, Peter B

2018-05-01

Evaluation of the influence of iterative reconstruction, tube settings and patient habitus on the accuracy of iodine quantification with dual-layer spectral CT (DL-CT). A CT abdomen phantom with different extension rings and four iodine inserts (1, 2, 5 and 10 mg/ml) was scanned on a DL-CT. The phantom was scanned with tube-voltages of 120 and 140 kVp and CTDI vol of 2.5, 5, 10 and 20 mGy. Reconstructions were performed for eight levels of iterative reconstruction (i0-i7). Diagnostic dose levels are classified depending on patient-size and radiation dose. Measurements of iodine concentration showed accurate and reliable results. Taking all CTDI vol -levels into account, the mean absolute percentage difference (MAPD) showed less accuracy for low CTDI vol -levels (2.5 mGy: 34.72%) than for high CTDI vol -levels (20 mGy: 5.89%). At diagnostic dose levels, accurate quantification of iodine was possible (MAPD 3.38%). Level of iterative reconstruction did not significantly influence iodine measurements. Iodine quantification worked more accurately at a tube voltage of 140 kVp. Phantom size had a considerable effect only at low-dose-levels; at diagnostic dose levels the effect of phantom size decreased (MAPD <5% for all phantom sizes). With DL-CT, even low iodine concentrations can be accurately quantified. Accuracies are higher when diagnostic radiation doses are employed. Copyright © 2018 Elsevier B.V. All rights reserved.

Experimental investigation of mode transitions in asymmetric capacitively coupled radio-frequency Ne and CF4 plasmas

NASA Astrophysics Data System (ADS)

Liu, Gang-Hu; Liu, Yong-Xin; Bai, Li-Shui; Zhao, Kai; Wang, You-Nian

2018-02-01

The dependence of the electron density and the emission intensity on external parameters during the transitions of the electron power absorption mode is experimentally studied in asymmetric electropositive (neon) and electronegative (CF4) capacitively coupled radio-frequency plasmas. The spatio-temporal distribution of the emission intensity is measured with phase resolved optical emission spectroscopy and the electron density at the discharge center is measured by utilizing a floating hairpin probe. In neon discharge, the emission intensity increases almost linearly with the rf voltage at all driving frequencies covered here, while the variation of the electron density with the rf voltage behaves differently at different driving frequencies. In particular, the electron density increases linearly with the rf voltage at high driving frequencies, while at low driving frequencies the electron density increases slowly at the low-voltage side and, however, grows rapidly, when the rf voltage is higher than a certain value, indicating a transition from α to γ mode. The rf voltage, at which the mode transition occurs, increases with the decrease of the driving frequency/the working pressure. By contrast, in CF4 discharge, three different electron power absorption modes can be observed and the electron density and emission intensity do not exhibit a simple dependence on the rf voltage. In particular, the electron density exhibits a minimum at a certain rf voltage when the electron power absorption mode is switching from drift-ambipolar to the α/γ mode. A minimum can also be found in the emission intensity at a higher rf voltage when a discharge is switching into the γ mode.

Electrocardiogram voltage discordance: Interpretation of low QRS voltage only in the precordial leads.

PubMed

Kim, Diana H; Verdino, Ralph J

To define clinical correlates of low voltage isolated to precordial leads on the surface electrocardiogram (ECG). Low voltage (V) on the ECG is defined as QRS V<5mm in all limb leads and <10mm in all precordial leads. The diagnostic use of ECGs with low voltage isolated to the precordial leads with normal limb lead voltages is unclear. Twelve-lead ECGs with QRS V>5mm in one or more limb leads and <10mm in all precordial leads were collected. Associated clinical conditions were determined from clinical data, echocardiograms, and chest radiographs. Low precordial voltage was found in 256 of 150,000 ECGs (~0.2%). 50.4% of patients had discordant ECGs that correlated with classic etiologies, with a higher incidence of LV dilation in those with classic etiologies than those without. Low precordial voltage is associated with classic etiologies and LV dilation. Copyright © 2017 Elsevier Inc. All rights reserved.

Operation of a sub-terahertz CW gyrotron with an extremely low voltage

NASA Astrophysics Data System (ADS)

Bratman, V. L.; Fedotov, A. E.; Fokin, A. P.; Glyavin, M. Yu.; Manuilov, V. N.; Osharin, I. V.

2017-11-01

Decreasing the operating voltage for medium-power sub-terahertz gyrotrons aimed at industrial and scientific applications is highly attractive, since it allows size and cost reduction of the tubes and power supply units. In this paper, we examine such an opportunity both numerically and experimentally for the fundamental cyclotron resonance operation of an existing gyrotron initially designed for operation at the second cyclotron harmonic with a relatively high voltage. Simulations predict that output power higher than 10 W can be produced at the fundamental harmonic at voltages less than 2 kV. To form a low-voltage helical electron beam with a sufficiently large pitch-factor, a positive voltage was applied to the first anode of the gyrotron three-electrode magnetron-injection gun with a negative voltage at the cathode. CW gyrotron operation at voltages down to 1.5 kV has been demonstrated at a frequency about of 256 GHz.

A quick response four decade logarithmic high-voltage stepping supply

NASA Technical Reports Server (NTRS)

Doong, H.

1978-01-01

An improved high-voltage stepping supply, for space instrumentation is described where low power consumption and fast settling time between steps are required. The high-voltage stepping supply, utilizing an average power of 750 milliwatts, delivers a pair of mirror images with 64 level logarithmic outputs. It covers a four decade range of + or - 2500 to + or - 0.29 volts having an output stability of + or - 0.5 percent or + or - 20 millivolts for all line load and temperature variations. The supply provides a typical step setting time of 1 millisecond with 100 microseconds for the lower two decades. The versatile design features of the high-voltage stepping supply provides a quick response staircase generator as described or a fixed voltage with the option to change levels as required over large dynamic ranges without circuit modifications. The concept can be implemented up to + or - 5000 volts. With these design features, the high-voltage stepping supply should find numerous applications where charged particle detection, electro-optical systems, and high voltage scientific instruments are used.

High-voltage measurements on the 5 ppm relative uncertainty level with collinear laser spectroscopy

NASA Astrophysics Data System (ADS)

Krämer, J.; König, K.; Geppert, Ch; Imgram, P.; Maaß, B.; Meisner, J.; Otten, E. W.; Passon, S.; Ratajczyk, T.; Ullmann, J.; Nörtershäuser, W.

2018-04-01

We present the results of high-voltage collinear laser spectroscopy measurements on the 5 ppm relative uncertainty level using a pump and probe scheme at the 4s ^2S1/2 → 4p ^2P3/2 transition of {\\hspace{0pt}}40Ca+ involving the 3d ^2D5/2 metastable state. With two-stage laser interaction and a reference measurement we can eliminate systematic effects such as differences in the contact potentials due to different electrode materials and thermoelectric voltages, and the unknown starting potential of the ions in the ion source. Voltage measurements were performed between  -5 kV and  -19 kV and parallel measurements with stable high-voltage dividers calibrated to 5 ppm relative uncertainty were used as a reference. Our measurements are compatible with the uncertainty limits of the high-voltage dividers and demonstrate an unprecedented (factor of 20) increase in the precision of direct laser-based high-voltage measurements.

An easy and effective method to modulate molecular energy level of the polymer based on benzodithiophene for the application in polymer solar cells.

PubMed

Zhang, Maojie; Guo, Xia; Ma, Wei; Zhang, Shaoqing; Huo, Lijun; Ade, Harald; Hou, Jianhui

2014-04-02

Attaching meta-alkoxy-phenyl groups as conjugated side chains is an easy and effective way to modulate the molecular energy level of D-A polymer for photovoltaic application, and the polymer solar cells based on the polymer consisting meta-alkoxy-phenyl groups as conjugated side chain, PBT-OP, shows an enhanced open circuit voltage and thus higher efficiency of 7.50%, under the illumination of AM 1.5G, 100 mW/cm(2) . © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Voltage Stress on Y Capacitors from Indirect Lightning Pulses According to ED-14/DO-160

NASA Astrophysics Data System (ADS)

Meier, F.

2012-05-01

Transients due to lightning strikes on an aircraft's fuselage impose stress on the input filters of elec- tronic equipment. Permanent damage can occur when exceeding the voltage handling capacity of filter components causing a short circuit to ground. In ED-14/DO-160, section 22, a number of waveforms and levels are defined which are used to check the airworthiness of avionics equipment. Depending on pro- cedure and level, Y-capacitors are stressed by transient voltages which exceed their dielectric strength. The design engineer's task is a properly select the type and voltage rating of capacitors. With moderate simplifications, a LCR-series network is justified to calculate the peak voltage dependent on the capacitance.

Multilevel cascade voltage source inverter with seperate DC sources

DOEpatents

Peng, Fang Zheng; Lai, Jih-Sheng

1997-01-01

A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

Multilevel cascade voltage source inverter with seperate DC sources

DOEpatents

Peng, Fang Zheng; Lai, Jih-Sheng

2002-01-01

A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

Multilevel cascade voltage source inverter with seperate DC sources

DOEpatents

Peng, Fang Zheng; Lai, Jih-Sheng

2001-04-03

A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

Multilevel cascade voltage source inverter with separate DC sources

DOEpatents

Peng, F.Z.; Lai, J.S.

1997-06-24

A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations. 15 figs.

Functionalized NbS2 as cathode for Li- and Na-ion batteries

NASA Astrophysics Data System (ADS)

Zhu, Jiajie; Alshareef, Husam N.; Schwingenschlögl, Udo

2017-07-01

Cathodes of Li- and Na-ion batteries usually have capacities <200 mAh/g, significantly less than the anodes. Two-dimensional materials can overcome this limitation but suffer from low voltages. In this context, we investigate NbS2 functionalized by O, F, and Cl as a cathode material by first-principles calculations, considering both the conversion and intercalation mechanisms. NbS2O2 shows a higher voltage than NbS2 for both Li and Na, but the voltage decreases drastically for increasing ion coverage. Even higher voltages and favorable dependences on the ion coverage are achieved by F and Cl functionalization. We obtain NbS2F2 and NbS2Cl2 energy densities of 1223 mW h/g and 823 mW h/g for lithiation and 1086 mW h/g and 835 mW h/g for sodiation, respectively. These values are higher than those for most state-of-the-art cathode materials ( ˜600 mW h/g). In addition, low diffusion barriers enable high cycling rates.

Association Between Local Bipolar Voltage and Conduction Gap Along the Left Atrial Linear Ablation Lesion in Patients With Atrial Fibrillation.

PubMed

Masuda, Masaharu; Fujita, Masashi; Iida, Osamu; Okamoto, Shin; Ishihara, Takayuki; Nanto, Kiyonori; Kanda, Takashi; Sunaga, Akihiro; Tsujimura, Takuya; Matsuda, Yasuhiro; Mano, Toshiaki

2017-08-01

A bipolar voltage reflects a thick musculature where formation of a transmural lesion may be hard to achieve. The purpose of this study was to explore the association between local bipolar voltage and conduction gap in patients with persistent atrial fibrillation (AF) who underwent atrial roof or septal linear ablation. This prospective observational study included 42 and 36 consecutive patients with persistent AF who underwent roof or septal linear ablations, respectively. After pulmonary vein isolation, left atrial linear ablations were performed, and conduction gap sites were identified and ablated after first-touch radiofrequency application. Conduction gap(s) after the first-touch roof and septal linear ablation were observed in 13 (32%) and 19 patients (53%), respectively. Roof and septal area voltages were higher in patients with conduction gap(s) than in those without (roof, 1.23 ± 0.77 vs 0.73 ± 0.42 mV, p = 0.010; septal, 0.96 ± 0.43 vs 0.54 ± 0.18 mV, p = 0.001). Trisected regional analyses revealed that the voltage was higher at the region with a conduction gap than at the region without. Complete conduction block across the roof and septal lines was not achieved in 3 (7%) and 6 patients (17%), respectively. Patients in whom a linear conduction block could not be achieved demonstrated higher ablation area voltage than those with a successful conduction block (roof, 1.91 ± 0.74 vs 0.81 ± 0.51 mV, p = 0.001; septal, 1.15 ± 0.56 vs 0.69 ± 0.31 mV, p = 0.006). In conclusion, a high regional bipolar voltage predicts failure to achieve conduction block after left atrial roof or septal linear ablation. In addition, the conduction gap was located at the preserved voltage area. Copyright © 2017 Elsevier Inc. All rights reserved.

Fluid simulation of the bias effect in inductive/capacitive discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yu-Ru; Research Group PLASMANT, Department of Chemistry, University of Antwerp, Universiteitsplein 1, Wilrijk, BE-2610 Antwerp; Gao, Fei

Computer simulations are performed for an argon inductively coupled plasma (ICP) with a capacitive radio-frequency bias power, to investigate the bias effect on the discharge mode transition and on the plasma characteristics at various ICP currents, bias voltages, and bias frequencies. When the bias frequency is fixed at 13.56 MHz and the ICP current is low, e.g., 6 A, the spatiotemporal averaged plasma density increases monotonically with bias voltage, and the bias effect is already prominent at a bias voltage of 90 V. The maximum of the ionization rate moves toward the bottom electrode, which indicates clearly the discharge mode transition in inductive/capacitivemore » discharges. At higher ICP currents, i.e., 11 and 13 A, the plasma density decreases first and then increases with bias voltage, due to the competing mechanisms between the ion acceleration power dissipation and the capacitive power deposition. At 11 A, the bias effect is still important, but it is noticeable only at higher bias voltages. At 13 A, the ionization rate is characterized by a maximum at the reactor center near the dielectric window at all selected bias voltages, which indicates that the ICP power, instead of the bias power, plays a dominant role under this condition, and no mode transition is observed. Indeed, the ratio of the bias power to the total power is lower than 0.4 over a wide range of bias voltages, i.e., 0–300 V. Besides the effect of ICP current, also the effect of various bias frequencies is investigated. It is found that the modulation of the bias power to the spatiotemporal distributions of the ionization rate at 2 MHz is strikingly different from the behavior observed at higher bias frequencies. Furthermore, the minimum of the plasma density appears at different bias voltages, i.e., 120 V at 2 MHz and 90 V at 27.12 MHz.« less

Time-Resolved Neutron Interferometry and the Mechanism of Electromechanical Coupling in Voltage-Gated Ion Channels.

PubMed

Blasie, J Kent

2018-01-01

The mechanism of electromechanical coupling for voltage-gated ion channels (VGICs) involved in neurological signal transmission, primarily Nav- and Kv-channels, remains unresolved. Anesthetics have been shown to directly impact this mechanism, at least for Kv-channels. Molecular dynamics computer simulations can now predict the structures of VGICs embedded within a hydrated phospholipid bilayer membrane as a function of the applied transmembrane voltage, but significant assumptions are still necessary. Nevertheless, these simulations are providing new insights into the mechanism of electromechanical coupling at the atomic level in 3-D. We show that time-resolved neutron interferometry can be used to investigate directly the profile structure of a VGIC, vectorially oriented within a single hydrated phospholipid bilayer membrane at the solid-liquid interface, as a function of the applied transmembrane voltage in the absence of any assumptions or potentially perturbing modifications of the VGIC protein and/or the host membrane. The profile structure is a projection of the membrane's 3-D structure onto the membrane normal and, in the absence of site-directed deuterium labeling, is provided at substantially lower spatial resolution than the atomic level. Nevertheless, this novel approach can be used to directly test the validity of the predictions from molecular dynamics simulations. We describe the key elements of our novel experimental approach, including why each is necessary and important to providing the essential information required for this critical comparison of "simulation" vs "experiment." In principle, the approach could be extended to higher spatial resolution and to include the effects of anesthetics on the electromechanical coupling mechanism in VGICs. © 2018 Elsevier Inc. All rights reserved.

Electrostatic shielding of transformers

DOEpatents

De Leon, Francisco

2017-11-28

Toroidal transformers are currently used only in low-voltage applications. There is no published experience for toroidal transformer design at distribution-level voltages. Toroidal transformers are provided with electrostatic shielding to make possible high voltage applications and withstand the impulse test.

Universal single point liquid level sensor

DOEpatents

Kronberg, J.W.

1992-10-27

A liquid level detector comprises a thermistor and circuitry for determining electrically if the thermistor is wet or dry and additionally, and continuously, if the thermistor is open or shorted. The voltage across the thermistor is filtered to remove low frequency electrical noise, then compared with a reference low voltage to determine if shorted and to a transition voltage chosen to be between the thermistor's normal wet and dry voltages to determine if the thermistor is wet or dry. The voltage is also compared to the supply voltage using a CMOS gate circuit element to determine if the thermistor is open. The gate passes both faults on to an LED to signal that a fault condition exists or indicates by another LED the wet or dry condition of the thermistor. A pump may be activated through a relay if the thermistor tests wet or dry, as desired. 1 figure.

Universal single point liquid level sensor

DOEpatents

Kronberg, James W.

1992-01-01

A liquid level detector comprises a thermistor and circuitry for determining electrically if the thermistor is wet or dry and additionally, and continuously, if the thermistor is open or shorted. The voltage across the thermistor is filtered to remove low frequency electrical noise, then compared with a reference low voltage to determine if shorted and to a transition voltage chosen to be between the thermistor's normal wet and dry voltages to determine if the thermistor is wet or dry. The voltage is also compared to the supply voltage using a CMOS gate circuit element to determine if the thermistor is open. The gate passes both faults on to an LED to signal that a fault condition exists or indicates by another LED the wet or dry condition of the thermistor. A pump may be activated through a relay if the thermistor tests wet or dry, as desired.

Electrochemical enhancement of nitric oxide removal from simulated lean-burn engine exhaust via solid oxide fuel cells.

PubMed

Huang, Ta-Jen; Wu, Chung-Ying; Lin, Yu-Hsien

2011-07-01

A solid oxide fuel cell (SOFC) unit is constructed with Ni-YSZ as the anode, YSZ as the electrolyte, and La(0.6)Sr(0.4)CoO(3)-Ce(0.9)Gd(0.1)O(1.95) as the cathode. The SOFC operation is performed at 600 °C with a cathode gas simulating the lean-burn engine exhaust and at various fixed voltage, at open-circuit voltage, and with an inert gas flowing over the anode side, respectively. Electrochemical enhancement of NO decomposition occurs when an operating voltage is generated; higher O(2) concentration leads to higher enhancement. Smaller NO concentration results in larger NO conversion. Higher operating voltage and higher O(2) concentration can lead to both higher NO conversion and lower fuel consumption. The molar rate of the consumption of the anode fuel can be very much smaller than that of NO to N(2) conversion. This makes the anode fuel consumed in the SOFC-DeNO(x) process to be much less than the equivalent amount of ammonia consumed in the urea-based selective catalytic reduction process. Additionally, the NO conversion increases with the addition of propylene and SO(2) into the cathode gas. These are beneficial for the application of the SOFC-DeNO(x) technology on treating diesel and other lean-burn engine exhausts.

Structure control of tungsten nanocontacts through pulsed-voltage application

NASA Astrophysics Data System (ADS)

Suzuki, Yasuchika; Kizuka, Tokushi

2018-05-01

The structural variation in tungsten nanocontacts (NCs) during a pulsed-voltage application was observed in situ by high-resolution transmission electron microscopy. The direction of electromigration in the NCs changed from the well-known direction to the opposite direction at a critical voltage of 0.9 V. Upon applying a higher pulsed voltage of 2.5 V, the NC structure changed to amorphous, with an average conductance density decreased to 82% of that of the crystalline NCs. We demonstrated that the external shape and texture of tungsten NCs can be controlled with an atomic precision through electromigration and amorphization by a pulsed-voltage application.

Solid state safety jumper cables

DOEpatents

Kronberg, James W.

1993-01-01

Solid state jumper cables for connecting two batteries in parallel, having two bridge rectifiers for developing a reference voltage, a four-input decoder for determining which terminals are to be connected based on a comparison of the voltage at each of the four terminals to the reference voltage, and a pair of relays for effecting the correct connection depending on the determination of the decoder. No connection will be made unless only one terminal of each battery has a higher voltage than the reference voltage, indicating "positive" terminals, and one has a lower voltage than the reference voltage, indicating "negative" terminals, and that, therefore, the two high voltage terminals may be connected and the two lower voltage terminals may be connected. Current flows once the appropriate relay device is closed. The relay device is preferably a MOSFET (metal oxide semiconductor field effect transistor) combined with a series array of photodiodes that develop MOSFET gate-closing potential when the decoder output causes an LED to light.

Solid state safety jumper cables

DOEpatents

Kronberg, J.W.

1993-02-23

Solid state jumper cables for connecting two batteries in parallel, having two bridge rectifiers for developing a reference voltage, a four-input decoder for determining which terminals are to be connected based on a comparison of the voltage at each of the four terminals to the reference voltage, and a pair of relays for effecting the correct connection depending on the determination of the decoder. No connection will be made unless only one terminal of each battery has a higher voltage than the reference voltage, indicating positive'' terminals, and one has a lower voltage than the reference voltage, indicating negative'' terminals, and that, therefore, the two high voltage terminals may be connected and the two lower voltage terminals may be connected. Current flows once the appropriate relay device is closed. The relay device is preferably a MOSFET (metal oxide semiconductor field effect transistor) combined with a series array of photodiodes that develop MOSFET gate-closing potential when the decoder output causes an LED to light.

Numerical modelling of the effect of dry air traces in a helium parallel plate dielectric barrier discharge

NASA Astrophysics Data System (ADS)

Lazarou, C.; Belmonte, T.; Chiper, A. S.; Georghiou, G. E.

2016-10-01

A validated numerical model developed for the study of helium barrier discharges in the presence of dry air impurities is presented in this paper. The model was used to numerically investigate the influence of air traces on the evolution of the helium dielectric barrier discharge (DBD). The level of dry air used as impurity was in the range from 0 to 1500 ppm, which corresponds to the most commonly encountered range in atmospheric pressure discharge experiments. The results presented in this study clearly show that the plasma chemistry and consequently the discharge evolution is highly affected by the concentration level of impurities in the mixture. In particular, it was observed that air traces assist the discharge ignition at low concentration levels (~55 ppm), while on the other hand, they increase the burning voltage at higher concentration levels (~1000 ppm). Furthermore, it was found that the discharge symmetry during the voltage cycle highly depends on the concentration of air. For the interpretation of the results, a detailed analysis of the processes that occur in the discharge gap is performed and the main reaction pathways of ion production are described. Thanks to this approach, useful insight into the physics behind the evolution of the discharge is obtained.

Adaptive control of base-isolated buildings using piezoelectric friction dampers against near-field earthquakes

NASA Astrophysics Data System (ADS)

Bitaraf, Maryam; Ozbulut, Osman E.; Hurlebaus, Stefan

2010-04-01

This paper investigates the effectiveness of two adaptive control strategies for modulating control force of piezoelectric friction dampers (PFDs) that are employed as semi-active devices in combination with laminated rubber bearings for seismic protection of buildings. The first controller developed in this study is a direct adaptive fuzzy logic controller. It consists of an upper-level and a sub-level direct fuzzy controller. In the hierarchical control scheme, higher-level controller modifies universe of discourse of both premise and consequent variables of the sub-level controller using scaling factors in order to determine command voltage of the damper according to current level of ground motion. The sub-level fuzzy controller employs isolation displacement and velocity as its premise variables and command voltage as its consequent variable. The second controller is based on the simple adaptive control (SAC) method, which is a type of direct adaptive control approach. The objective of the SAC method is to make the plant, the controlled system, track the behavior of the structure with the optimum performance. By using SAC strategy, any change in the characteristics of the structure or uncertainties in the modeling of the structure and in the external excitation would be considered because it continuously monitors its own performance to modify its parameters. Here, SAC methodology is employed to obtain the required force which results in the optimum performance of the structure. Then, the command voltage of the PFD is determined to generate the desired force. For comparison purposes, an optimal controller is also developed and considered in the simulations together with maximum passive operation of the friction damper. Time-history analyses of a base-isolated five-story building are performed to evaluate the performance of the controllers. Results reveal that developed adaptive controllers can successfully improve seismic response of the base-isolated buildings against various types of earthquakes.

Partial discharge testing under direct voltage conditions

NASA Technical Reports Server (NTRS)

Bever, R. S.; Westrom, J. L.

1982-01-01

DC partial discharge (PD) (corona) testing is performed using a multichannel analyzer for pulse storing, and data is collected during increase of voltage and at quiescent voltage levels. Thus high voltage ceramic disk capacitors were evaluated by obtaining PD data interspersed during an accelerated life test. Increased PD activity was found early in samples that later failed catastrophically. By this technique, trends of insulation behavior are revealed sensitively and nondestructively in high voltage dc components.

Electromechanical x-ray generator

DOEpatents

Watson, Scott A; Platts, David; Sorensen, Eric B

2016-05-03

An electro-mechanical x-ray generator configured to obtain high-energy operation with favorable energy-weight scaling. The electro-mechanical x-ray generator may include a pair of capacitor plates. The capacitor plates may be charged to a predefined voltage and may be separated to generate higher voltages on the order of hundreds of kV in the AK gap. The high voltage may be generated in a vacuum tube.

Method of measuring field funneling and range straggling in semiconductor charge-collecting junctions

NASA Technical Reports Server (NTRS)

Zoutendyk, John A. (Inventor); Malone, Carl J. (Inventor)

1987-01-01

Electric-field funneling length is measured while irradiating a semiconductor charge-collecting junction with electron-hole-pair generating charged particles at a first junction bias voltage. The bias voltage is then reduced to a second level in order to reduce the depth of the depletion region such that the total charge can no longer be collected by drift and measured in the energy band previously displayed in the multichannel analyzer. This is representative of the maximum electric field funnelling length which may be calculated by measuring the difference at the second bias voltage level of the depletion width and the ion penetration range. The bias voltage is further lowered to a third level at which the particles are collected over a spread of energy levels while at least some of the particles are still collected at the selected energy level. From this the different depths of penetration of the particles are determined while additional effects due to diffusion are minimized.

Method of measuring field funneling and range straggling in semiconductor charge-collecting junctions

NASA Technical Reports Server (NTRS)

Zoutendyk, J. A. (Inventor)

1985-01-01

Electric-field funneling length is measured while irradiating a semiconductor charge-collecting junction with electron-hole-pair generating charged particles at a first junction bias voltage. The bias voltage is then reduced to a second level in order to reduce the depth of the depletion region such that the total charge can no longer be collected by drift and measured in the energy band previously displayed in the multichannel analyzer. This is representative of the maximum electric field funneling length which may be calculated by measuring the difference at the second bias voltage level of the depletion width and the ion penetration range. The bias voltage is further lowered to a third level at which the particles are collected over a spread of energy levels while at least some of the particles are still collected at the selected energy level. From this the different depths of penetration of the particles are determined while additional effects due to diffusion are minimized.

Electro-optic resonant phase modulator

NASA Technical Reports Server (NTRS)

Chen, Chien-Chung (Inventor); Hemmati, Hamid (Inventor); Robinson, Deborah L. (Inventor)

1992-01-01

An electro-optic resonant cavity is used to achieve phase modulation with lower driving voltages. Laser damage thresholds are inherently higher than with previously used integrated optics due to the utilization of bulk optics. Phase modulation is achieved at higher speeds with lower driving voltages than previously obtained with non-resonant electro-optic phase modulators. The instant scheme uses a data locking dither approach as opposed to the conventional sinusoidal locking schemes. In accordance with a disclosed embodiment, a resonant cavity modulator has been designed to operate at a data rate in excess of 100 megabits per sec. By carefully choosing the cavity finesse and its dimension, it is possible to control the pulse switching time to within 4 nano-sec. and to limit the required switching voltage to within 10 V. This cavity locking scheme can be applied by using only the random data sequence, and without the need of dithering of the cavity. Compared to waveguide modulators, the resonant cavity has a comparable modulating voltage requirement. Because of its bulk geometry, the resonant cavity modulator has the potential of accommodating higher throughput power. Mode matching into the bulk device is easier and typically can be achieved with higher efficiency. An additional control loop is incorporated into the modulator to maintain the cavity on resonance.

Multilevel-Dc-Bus Inverter For Providing Sinusoidal And Pwm Electrical Machine Voltages

DOEpatents

Su, Gui-Jia [Knoxville, TN

2005-11-29

A circuit for controlling an ac machine comprises a full bridge network of commutation switches which are connected to supply current for a corresponding voltage phase to the stator windings, a plurality of diodes, each in parallel connection to a respective one of the commutation switches, a plurality of dc source connections providing a multi-level dc bus for the full bridge network of commutation switches to produce sinusoidal voltages or PWM signals, and a controller connected for control of said dc source connections and said full bridge network of commutation switches to output substantially sinusoidal voltages to the stator windings. With the invention, the number of semiconductor switches is reduced to m+3 for a multi-level dc bus having m levels. A method of machine control is also disclosed.

Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes

DOE PAGES

Vizkelethy, G.; King, M. P.; Aktas, O.; ...

2016-12-02

Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories’ nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. Here, the displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.

Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vizkelethy, G.; King, M. P.; Aktas, O.

Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories’ nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. Here, the displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.

Deployment strategy for battery energy storage system in distribution network based on voltage violation regulation

NASA Astrophysics Data System (ADS)

Wu, H.; Zhou, L.; Xu, T.; Fang, W. L.; He, W. G.; Liu, H. M.

2017-11-01

In order to improve the situation of voltage violation caused by the grid-connection of photovoltaic (PV) system in a distribution network, a bi-level programming model is proposed for battery energy storage system (BESS) deployment. The objective function of inner level programming is to minimize voltage violation, with the power of PV and BESS as the variables. The objective function of outer level programming is to minimize the comprehensive function originated from inner layer programming and all the BESS operating parameters, with the capacity and rated power of BESS as the variables. The differential evolution (DE) algorithm is applied to solve the model. Based on distribution network operation scenarios with photovoltaic generation under multiple alternative output modes, the simulation results of IEEE 33-bus system prove that the deployment strategy of BESS proposed in this paper is well adapted to voltage violation regulation invariable distribution network operation scenarios. It contributes to regulating voltage violation in distribution network, as well as to improve the utilization of PV systems.

Low QRS Voltage on Presenting Electrocardiogram Predicts Multi-vessel Disease in Anterior ST-segment Elevation Myocardial Infarction.

PubMed

Kobayashi, Akihiro; Misumida, Naoki; Aoi, Shunsuke; Kanei, Yumiko

Low QRS voltage was reported to predict adverse outcomes in acute myocardial infarction in the pre-thrombolytic era. However, the association between low voltage and angiographic findings has not been fully addressed. We performed a retrospective analysis of patients with anterior ST-segment elevation myocardial infarction (STEMI). Low QRS voltage was defined as either peak to peak QRS complex voltage <1.0mV in all precordial leads or <0.5mV in all limb leads. Among 190 patients, 37 patients (19%) had low voltage. Patients with low voltage had a higher rate of multi-vessel disease (MVD) (76% vs. 52%, p=0.01). Patients with low voltage were more likely to undergo coronary artery bypass grafting (CABG) during admission (11% vs. 2%, p=0.028). Low voltage was an independent predictor for MVD (OR 2.50; 95% CI 1.12 to 6.03; p=0.032). Low QRS voltage was associated with MVD and in-hospital CABG in anterior STEMI. Copyright © 2017 Elsevier Inc. All rights reserved.

Laser Doppler vibrometer measurement on spiders in moving-coil loudspeakers

NASA Astrophysics Data System (ADS)

Kong, Xiaopeng; Zeng, Xinwu; Tian, Zhangfu

2014-12-01

The spider is the dominate stiffness to suspend the cone for a moving-coil loudspeaker unit, and is most commonly a concentrically corrugated fabric disk. A subwoofer closed box is designed to excite the tested spiders pneumatically, and the Laser Doppler Vibrometer (LDV) is used to measure the velocity of the moving spiders. The effective stiffness, loss factor and some viscoelastic behaviors such as level dependent stiffness have been investigated. The results find that, this pneumatic non-contact dynamic technique successfully measured the viscoelastic behaviors of spiders from extremely low frequency 5 Hz to 200 Hz, and the effective stiffness of spiders is dependent on the input voltage level, which is higher level with lower stiffness.

Space charge inhibition effect of nano-Fe{sub 3}O{sub 4} on improvement of impulse breakdown voltage of transformer oil based on improved Kerr optic measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Qing, E-mail: yangqing@cqu.edu.cn; Yu, Fei; Sima, Wenxia

Transformer oil-based nanofluids (NFs) with 0.03 g/L Fe{sub 3}O{sub 4} nanoparticle content exhibit 11.2% higher positive impulse breakdown voltage levels than pure transformer oils. To study the effects of the Fe{sub 3}O{sub 4} nanoparticles on the space charge in transformer oil and to explain why the nano-modified transformer oil exhibits improved impulse breakdown voltage characteristics, the traditional Kerr electro-optic field mapping technique is improved by increasing the length of the parallel-plate electrodes and by using a photodetector array as a high light sensitivity device. The space charge distributions of pure transformer oil and of NFs containing Fe{sub 3}O{sub 4} nanoparticlesmore » can be measured using the improved Kerr electro-optic field mapping technique. Test results indicate a significant reduction in space charge density in the transformer oil-based NFs with the Fe{sub 3}O{sub 4} nanoparticles. The fast electrons are captured by the nanoparticles and are converted into slow-charged particles in the NFs, which then reduce the space charge density and result in a more uniform electric field distribution. Streamer propagation in the NFs is also obstructed, and the breakdown strengths of the NFs under impulse voltage conditions are also improved.« less

Buried Oxide Densification for Low Power, Low Voltage CMOS Applications

NASA Technical Reports Server (NTRS)

Allen, L. P.; Anc, M. J.; Dolan, B.; Jiao, J.; Guss, B.; Seraphin, S.; Liu, S. T.; Jenkins, W.

1998-01-01

Special technology and circuit architecture are of growing interest for implementation of circuits which operate at low supply voltages and consume low power levels without sacrificing performance[1]. Use of thin buried oxide SOI substrates is a primary approach to simultaneously achieve these goals. A significant aspect regarding SIMOX SOI for low voltage, low power applications is the reliability and performance of the thin buried oxide. In addition, when subjected to high total dose irradiation, the silicon islands within the BOX layer of SIMOX can store charges and significantly effect the back channel threshold voltages of devices. Thus, elimination of the islands within the buried oxide (BOX) layer is preferred in order to prevent leakage through these conductive islands and charge build-up within the buried oxide layer. A differential (2-step) ramp rate as applied to full and 100 nm BOX SIMOX was previously reported to play a significant role in the stoichiometry and island formation within the buried layer[2]. This paper focus is on the properties of a thin (120nm) buried oxide as a function of the anneal ramp rate and the temperature of anneal. In this research, we have found an improvement in the buried oxide stoichiometry with the use of a slower, singular ramp rate for specified thin buried oxides, with slower ramp rates and higher temperatures of anneal suggested for reducing the presence of Si islands within the BOX layer.

Interface trap of p-type gate integrated AlGaN/GaN heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Kim, Kyu Sang

2017-09-01

In this work, the impact of trap states at the p-(Al)GaN/AlGaN interface has been investigated for the normally-off mode p-(Al)GaN/AlGaN/GaN heterostructure field-effect transistors (HFETs) by means of frequency dependent conductance. From the current-voltage (I-V) measurement, it was found that the p-AlGaN gate integrated device has higher drain current and lower gate leakage current compared to the p-GaN gate integrated device. We obtained the interface trap density and the characteristic time constant for the p-type gate integrated HFETs under the forward gate voltage of up to 6 V. As a result, the interface trap density (characteristic time constant) of the p-GaN gate device was lower (longer) than that of the p-AlGaN. Furthermore, it was analyzed that the trap state energy level of the p-GaN gate device was located at the shallow level relative to the p-AlGaN gate device, which accounts for different gate leakage current of each devices.

Thermo-mechanical behavior of stainless steel knitted structures

NASA Astrophysics Data System (ADS)

Hamdani, Syed Talha Ali; Fernando, Anura; Maqsood, Muhammad

2016-09-01

Heating fabric is an advanced textile material that is extensively researched by the industrialists and the scientists alike. Ability to create highly flexible and drapeable heating fabrics has many applications in everyday life. This paper presents a study conducted on the comparison of heatability of knitted fabric made of stainless steel yarn. The purpose of the study is to find a suitable material for protective clothing against cold environments. In the current research the ampacity of stainless steel yarn is observed in order to prevent the overheating of the heating fabrics. The behavior of the knitted structure is studied for different levels of supply voltage. Infrared temperature sensing is used to measure the heat generated from the fabrics in order to measure the temperature of the fabrics without physical contact. It is concluded that interlock structure is one of the most suited structures for knitted heating fabrics. As learnt through this research, fabrics made of stainless steel yarn are capable of producing a higher level of heating compared to that of knitted fabric made using silver coated polymeric yarn at the same supply voltage.

Membrane depolarization inhibits spiral ganglion neurite growth via activation of multiple types of voltage sensitive calcium channels and calpain

PubMed Central

Roehm, Pamela C.; Xu, Ningyong; Woodson, Erika A.; Green, Steven H.; Hansen, Marlan R.

2008-01-01

The effect of membrane electrical activity on spiral ganglion neuron (SGN) neurite growth remains unknown despite its relevance to cochlear implant technology. We demonstrate that membrane depolarization delays the initial formation and inhibits the subsequent extension of cultured SGN neurites. This inhibition depends directly on the level of depolarization with higher levels of depolarization causing retraction of existing neurites. Cultured SGNs express subunits for L-type, N-type, and P/Q type voltage-gated calcium channels (VGCCs) and removal of extracellular Ca2+ or treatment with a combination of L-type, N-type, P/Q-type VGCC antagonists rescues SGN neurite growth under depolarizing conditions. By measuring the fluorescence intensity of SGNs loaded with the fluorogenic calpain substrate t-butoxy carbonyl-Leu-Met-chloromethylaminocoumarin (20 μM), we demonstrate that depolarization activates calpains. Calpeptin (15 μM), a calpain inhibitor, prevents calpain activation by depolarization and rescues neurite growth in depolarized SGNs suggesting that calpain activation contributes to the inhibition of neurite growth by depolarization. PMID:18055215

Influence of asymmetric attenuation of single and paired dendritic inputs on summation of synaptic potentials and initiation of action potentials.

PubMed

Fortier, Pierre A; Bray, Chelsea

2013-04-16

Previous studies revealed mechanisms of dendritic inputs leading to action potential initiation at the axon initial segment and backpropagation into the dendritic tree. This interest has recently expanded toward the communication between different parts of the dendritic tree which could preprocess information before reaching the soma. This study tested for effects of asymmetric voltage attenuation between different sites in the dendritic tree on summation of synaptic inputs and action potential initiation using the NEURON simulation environment. Passive responses due to the electrical equivalent circuit of the three-dimensional neuron architecture with leak channels were examined first, followed by the responses after adding voltage-gated channels and finally synaptic noise. Asymmetric attenuation of voltage, which is a function of asymmetric input resistance, was seen between all pairs of dendritic sites but the transfer voltages (voltage recorded at the opposite site from stimulation among a pair of dendritic sites) were equal and also summed linearly with local voltage responses during simultaneous stimulation of both sites. In neurons with voltage-gated channels, we reproduced the observations where a brief stimulus to the proximal ascending dendritic branch of a pyramidal cell triggers a local action potential but a long stimulus triggers a somal action potential. Combined stimulation of a pair of sites in this proximal dendrite did not alter this pattern. The attraction of the action potential onset toward the soma with a long stimulus in the absence of noise was due to the higher density of voltage-gated sodium channels at the axon initial segment. This attraction was, however, negligible at the most remote distal dendritic sites and was replaced by an effect due to high input resistance. Action potential onset occurred at the dendritic site of higher input resistance among a pair of remote dendritic sites, irrespective of which of these two sites received the synaptic input. Exploration of the parameter space showed how the gradient of voltage-gated channel densities and input resistances along a dendrite could draw the action potential onset away from the stimulation site. The attraction of action potential onset toward the higher density of voltage-gated channels in the soma during stimulation of the proximal dendrite was, however, reduced after the addition of synaptic noise. Copyright © 2012 IBRO. Published by Elsevier Ltd. All rights reserved.

Office and Home Blood Pressures as Determinants of Electrocardiographic Left Ventricular Hypertrophy Among Black Nigerians Compared With White Flemish

PubMed Central

Odili, Augustine N; Thijs, Lutgarde; Yang, Wen-Yi; Ogedengbe, John O; Nwegbu, Maxwell M; Jacobs, Lotte; Wei, Fang-Fei; Feng, Ying-Mei; Zhang, Zhen-Yu; Kuznetsova, Tatiana; Nawrot, Tim S; Staessen, Jan A

2017-01-01

Abstract BACKGROUND The association of electrocardiographic left ventricular hypertrophy (ECG-LVH) with blood pressure (BP) in Blacks living in sub-Saharan Africa remains poorly documented. METHODS In 225 Black Nigerians and 729 White Flemish, we analyzed QRS voltages and voltage-duration products and 12 criteria diagnostic of ECG-LVH in relation to office BP (mean of 5 consecutive readings) and home BP (duplicate morning and evening readings averaged over 1 week). RESULTS In multivariable analyses, QRS voltage and voltage-duration indexes were generally higher in Blacks than Whites. By using any of 12 criteria, ECG-LVH was more prevalent among Black than White men (54.4% vs. 36.0%) with no ethnic difference among women (17.1%). Precordial voltages and voltage-duration products increased with office and home systolic BP (SBP), and increases were up to 3-fold steeper in Blacks. In Blacks vs. Whites, increases in the Sokolow–Lyon voltage associated with a 10-mm Hg higher SBP were 0.18 mV (95% confidence interval [CI], 0.09–0.26) vs. 0.06 mV (0.02–0.09) and 0.17 mV (0.07–0.28) vs. 0.11 mV (CI, 0.07–0.15) for office and home BP, respectively, with a significant ethnic gradient (P < 0.05). The risk of ECG-LVH increased more with office and home BP in Blacks than Whites. CONCLUSIONS Associations of ECG voltages and voltage-duration products and risk of ECG-LVH with BP are steeper in Black Nigerians compared with a White reference population. In resource-poor settings of sub-Saharan Africa, the ECG in combination with office and home BP is an essential instrument in risk stratification across the entire BP range. PMID:29059302

Low Voltage Electrowetting-on-Dielectric Platform using Multi-Layer Insulators

PubMed Central

Lin, Yan-You; Evans, Randall D.; Welch, Erin; Hsu, Bang-Ning; Madison, Andrew C.; Fair, Richard B.

2010-01-01

A low voltage, two-level-metal, and multi-layer insulator electrowetting-on-dielectric (EWD) platform is presented. Dispensing 300pl droplets from 140nl closed on-chip reservoirs was accomplished with as little as 11.4V solely through EWD forces, and the actuation threshold voltage was 7.2V with a 1Hz voltage switching rate between electrodes. EWD devices were fabricated with a multilayer insulator consisting of 135nm sputtered tantalum pentoxide (Ta2O5) and 180nm parylene C coated with 70nm of CYTOP. Furthermore, the minimum actuation threshold voltage followed a previously published scaling model for the threshold voltage, VT, which is proportional to (t/εr)1/2, where t and εr are the insulator thickness and dielectric constant respectively. Device threshold voltages are compared for several insulator thicknesses (200nm, 500nm, and 1µm), different dielectric materials (parylene C and tantalum pentoxide), and homogeneous versus heterogeneous compositions. Additionally, we used a two-level-metal fabrication process, which enables the fabrication of smaller and denser electrodes with high interconnect routing flexibility. We also have achieved low dispensing and actuation voltages for scaled devices with 30pl droplets. PMID:20953362

Controllable transition from positive space charge to negative space charge in an inverted cylindrical magnetron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rane, R., E-mail: ramu@ipr.res.in; Ranjan, M.; Mukherjee, S.

2016-01-15

The combined effect of magnetic field (B), gas pressure (P), and the corresponding discharge voltage on the discharge properties of argon in inverted cylindrical magnetron has been investigated. In the experiment, anode is biased with continuous 10 ms sinusoidal half wave. It is observed that at a comparatively higher magnetic field (i.e., >200 gauss) and lower operating pressure (i.e., <1 × 10{sup −3} mbar), the discharge extinguishes and demands a high voltage to reignite. Discharge current increases with increase in magnetic field and starts reducing at sufficiently higher magnetic field for a particular discharge voltage due to restricted electron diffusion towards the anode.more » It is observed that B/P ratio plays an important role in sustaining the discharge and is constant for a discharge voltage. The discharge is transformed to negative space charge regime from positive space charge regime at certain B/P ratio and this ratio varies linearly with the discharge voltage. The space charge reversal is indicated by the radial profile of the floating potential and plasma potential in between two electrodes for different magnetic fields. At a particular higher magnetic field (beyond 100 gauss), the floating potential increases gradually with the radial distance from cathode, whereas it remains almost constant at lower magnetic field.« less

Operation of a voltage source converter at increased utility voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaura, V.; Blasko, V.

1997-01-01

The operation of a voltage source converter (VSC) with regeneration capability, controllable power factor, and low distortion of utility currents is analyzed at increased utility voltage. Increase in the utility voltage causes a VSC to saturate and enter a nonlinear mode of operation. To operate under elevated utility, two steps are taken: (1) a pulse width modulation (PWM) algorithm is implemented which extends the linear region of operation by 15% and (2) a PWM saturation regulator is used to control the reactive current at higher utility voltages. The PWM algorithm reduces the switching losses by at least 33% and themore » effect of blanking time by one-third. All analytical results are experimentally verified on a 100 kW three-phase VSC.« less

Fuel cell serves as oxygen level detector

NASA Technical Reports Server (NTRS)

1965-01-01

Monitoring the oxygen level in the air is accomplished by a fuel cell detector whose voltage output is proportional to the partial pressure of oxygen in the sampled gas. The relationship between output voltage and partial pressure of oxygen can be calibrated.

Design and Implementation of 13 Levels Multilevel Inverter for Photovoltaic System

NASA Astrophysics Data System (ADS)

Subramani, C.; Dhineshkumar, K.; Palanivel, P.

2018-04-01

This paper approaches the appearing and modernization of S-Type PV based 13- level multilevel inverter with less quantity of switch. The current S-Type Multi level inverter contains more number of switches and voltage sources. Multilevel level inverter is a be understandable among the most gainful power converters for high power application and present day applications with reduced switches. The fundamental good arrangement of the 13-level multilevel inverter is to get ventured voltage from a couple of levels of DC voltages.. The controller gives actual way day and age to switches through driver circuit using PWM methodology. The execution assessment of proposed multilevel inverter is checked using MATLAB/Simulink. This is the outstanding among other techniquem appeared differently in relation to all other existing system

The output voltage model and experiment of magnetostrictive displacement sensor based on Weidemann effect

NASA Astrophysics Data System (ADS)

Wang, Bowen; Li, Yuanyuan; Xie, Xinliang; Huang, Wenmei; Weng, Ling; Zhang, Changgeng

2018-05-01

Based on the Wiedemann effect and inverse magnetostritive effect, the output voltage model of a magnetostrictive displacement sensor has been established. The output voltage of the magnetostrictive displacement sensor is calculated in different magnetic fields. It is found that the calculating result is in an agreement with the experimental one. The theoretical and experimental results show that the output voltage of the displacement sensor is linearly related to the magnetostrictive differences, (λl-λt), of waveguide wires. The measured output voltages for Fe-Ga and Fe-Ni wire sensors are 51.5mV and 36.5mV, respectively, and the output voltage of Fe-Ga wire sensor is obviously higher than that of Fe-Ni wire sensor under the same magnetic field. The model can be used to predict the output voltage of the sensor and to provide guidance for the optimization design of the sensor.

Dynamic neutral beam current and voltage control to improve beam efficacy in tokamaks

NASA Astrophysics Data System (ADS)

Pace, D. C.; Austin, M. E.; Bardoczi, L.; Collins, C. S.; Crowley, B.; Davis, E.; Du, X.; Ferron, J.; Grierson, B. A.; Heidbrink, W. W.; Holcomb, C. T.; McKee, G. R.; Pawley, C.; Petty, C. C.; Podestà, M.; Rauch, J.; Scoville, J. T.; Spong, D. A.; Thome, K. E.; Van Zeeland, M. A.; Varela, J.; Victor, B.

2018-05-01

An engineering upgrade to the neutral beam system at the DIII-D tokamak [J. L. Luxon, Nucl. Fusion 42, 614 (2002)] enables time-dependent programming of the beam voltage and current. Initial application of this capability involves pre-programmed beam voltage and current injected into plasmas that are known to be susceptible to instabilities that are driven by energetic ( E ≥ 40 keV) beam ions. These instabilities, here all Alfvén eigenmodes (AEs), increase the transport of the beam ions beyond a classical expectation based on particle drifts and collisions. Injecting neutral beam power, P beam ≥ 2 MW, at reduced voltage with increased current reduces the drive for Alfvénic instabilities and results in improved ion confinement. In lower-confinement plasmas, this technique is applied to eliminate the presence of AEs across the mid-radius of the plasmas. Simulations of those plasmas indicate that the mode drive is decreased and the radial extent of the remaining modes is reduced compared to a higher beam voltage case. In higher-confinement plasmas, this technique reduces AE activity in the far edge and results in an interesting scenario of beam current drive improving as the beam voltage reduces from 80 kV to 65 kV.

Dynamic neutral beam current and voltage control to improve beam efficacy in tokamaks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Austin, Max E.; Bardoczi, Laszlo; Collins, Cami S.

Here, an engineering upgrade to the neutral beam system at the DIII-D tokamak enables time-dependent programming of the beam voltage and current. Initial application of this capability involves pre-programmed beam voltage and current injected into plasmas that are known to be susceptible to instabilities that are driven by energetic (E ≥ 40 keV) beam ions. These instabilities, here all Alfvén eigenmodes (AEs), increase the transport of the beam ions beyond a classical expectation based on particle drifts and collisions. Injecting neutral beam power, P beam ≥ 2MW, at reduced voltage with increased current reduces the drive for Alfvénic instabilities andmore » results in improved ion confinement. In lower-confinement plasmas, this technique is applied to eliminate the presence of AEs across the mid-radius of the plasmas. Simulations of those plasmas indicate that the mode drive is decreased and the radial extent of the remaining modes is reduced compared to a higher beam voltage case. In higher-confinement plasmas, this technique reduces AE activity in the far edge and results in an interesting scenario of beam current drive improving as the beam voltage reduces from 80 kV to 65 kV.« less

Dynamic neutral beam current and voltage control to improve beam efficacy in tokamaks

DOE PAGES

Austin, Max E.; Bardoczi, Laszlo; Collins, Cami S.; ...

2018-04-20

Here, an engineering upgrade to the neutral beam system at the DIII-D tokamak enables time-dependent programming of the beam voltage and current. Initial application of this capability involves pre-programmed beam voltage and current injected into plasmas that are known to be susceptible to instabilities that are driven by energetic (E ≥ 40 keV) beam ions. These instabilities, here all Alfvén eigenmodes (AEs), increase the transport of the beam ions beyond a classical expectation based on particle drifts and collisions. Injecting neutral beam power, P beam ≥ 2MW, at reduced voltage with increased current reduces the drive for Alfvénic instabilities andmore » results in improved ion confinement. In lower-confinement plasmas, this technique is applied to eliminate the presence of AEs across the mid-radius of the plasmas. Simulations of those plasmas indicate that the mode drive is decreased and the radial extent of the remaining modes is reduced compared to a higher beam voltage case. In higher-confinement plasmas, this technique reduces AE activity in the far edge and results in an interesting scenario of beam current drive improving as the beam voltage reduces from 80 kV to 65 kV.« less

A new low voltage level-shifted FVF current mirror with enhanced bandwidth and output resistance

NASA Astrophysics Data System (ADS)

Aggarwal, Bhawna; Gupta, Maneesha; Gupta, Anil Kumar; Sangal, Ankur

2016-10-01

This paper proposes a new high-performance level-shifted flipped voltage follower (LSFVF) based low-voltage current mirror (CM). The proposed CM utilises the low-supply voltage and low-input resistance characteristics of a flipped voltage follower (FVF) CM. In the proposed CM, level-shifting configuration is used to obtain a wide operating current range and resistive compensation technique is employed to increase the operating bandwidth. The peaking in frequency response is reduced by using an additional large MOSFET. Moreover, a very high output resistance (in GΩ range) along with low-current transfer error is achieved through super-cascode configuration for a wide current range (0-440 µA). Small signal analysis is carried out to show the improvements achieved at each step. The proposed CM is simulated by Mentor Graphics Eldospice in TSMC 0.18 µm CMOS, BSIM3 and Level 53 technology. In the proposed CM, a bandwidth of 6.1799 GHz, 1% settling time of 0.719 ns, input and output resistances of 21.43 Ω and 1.14 GΩ, respectively, are obtained with a single supply voltage of 1 V. The layout of the proposed CM has been designed and post-layout simulation results have been shown. The post-layout simulation results for Monte Carlo and temperature analysis have also been included to show the reliability of the CM against the variations in process parameters and temperature changes.

Inkjet Printing of Organic Light-Emitting Diodes Based on Alcohol-Soluble Polyfluorenes

NASA Astrophysics Data System (ADS)

Odod, A. V.; Gadirov, R. M.; Solodova, T. A.; Kurtsevich, A. E.; Il'gach, D. M.; Yakimanskii, A. V.; Burtman, V.; Kopylova, T. N.

2018-04-01

Ink compositions for inkjet printing based on poly(9.9-dioctylfluorene) and its alcohol-soluble analog are created. Current-voltage, brightness-voltage, and spectral characteristics are compared for one- and twolayer polymer structures of organic light-emitting diodes. It is shown that the efficiency of the alcohol-soluble polyfluorene analog is higher compared to poly(9.9-dioctylfluorene), and the possibility of viscosity optimization is higher compared to aromatic chlorinated solvents.

Voltage Sag due to Pollution Induced Flashover Across Ceramic Insulator Strings

NASA Astrophysics Data System (ADS)

Reddy B, Subba; Goswami, Arup Kumar

2017-11-01

Voltage sag or voltage dips are significant to industrial reliability. There is a necessity to characterize the feeder level power quality (PQ) and the PQ performance among various utility companies. Contamination/pollution induced flashover is the ultimate consequence of the creeping discharges across the insulator strings which induce voltage sag. These have a severe threat on the safe and reliable operation of power systems. In the present work an attempt has been made to experimentally investigate the occurrence of voltage sag/dips during pollution induced flashovers. Results show significant dip/sag in the voltage magnitude during the flashover process.

Development of gait segmentation methods for wearable foot pressure sensors.

PubMed

Crea, S; De Rossi, S M M; Donati, M; Reberšek, P; Novak, D; Vitiello, N; Lenzi, T; Podobnik, J; Munih, M; Carrozza, M C

2012-01-01

We present an automated segmentation method based on the analysis of plantar pressure signals recorded from two synchronized wireless foot insoles. Given the strict limits on computational power and power consumption typical of wearable electronic components, our aim is to investigate the capability of a Hidden Markov Model machine-learning method, to detect gait phases with different levels of complexity in the processing of the wearable pressure sensors signals. Therefore three different datasets are developed: raw voltage values, calibrated sensor signals and a calibrated estimation of total ground reaction force and position of the plantar center of pressure. The method is tested on a pool of 5 healthy subjects, through a leave-one-out cross validation. The results show high classification performances achieved using estimated biomechanical variables, being on average the 96%. Calibrated signals and raw voltage values show higher delays and dispersions in phase transition detection, suggesting a lower reliability for online applications.

Detector Powering in the 21st Century Why stay stuck with the Good old 20th Century methods?

NASA Astrophysics Data System (ADS)

Dhawan, Satish; Sumner, Richard

Future Collider Physics Detectors are envisioned with large granularity but we have a power delivery problem unless we fill a large fraction of the detector volume with copper conductors. LHC detector electronics is powered by transporting direct current over distances of 30 to 150 meters. This is how Thomas Alva Edison powered his light bulb. For example, CMS ECAL uses 50 kiloamps at 2.5 volts, supplied over a cable set with a transmission efficiency of only 30%. The transmission loss becomes waste heat in the detector that has to be removed. We have been exploring methods to transmit the DC power at higher voltage (low current), reducing to the final low voltage (high current) using DC-DC converters. These converters must operate in high magnetic fields and high radiation levels. This requires rad hard components and non-magnetic (air core) inductors.

Focal plane infrared readout circuit with automatic background suppression

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Yang, Guang (Inventor); Sun, Chao (Inventor); Shaw, Timothy J. (Inventor); Wrigley, Chris J. (Inventor)

2002-01-01

A circuit for reading out a signal from an infrared detector includes a current-mode background-signal subtracting circuit having a current memory which can be enabled to sample and store a dark level signal from the infrared detector during a calibration phase. The signal stored by the current memory is subtracted from a signal received from the infrared detector during an imaging phase. The circuit also includes a buffered direct injection input circuit and a differential voltage readout section. By performing most of the background signal estimation and subtraction in a current mode, a low gain can be provided by the buffered direct injection input circuit to keep the gain of the background signal relatively small, while a higher gain is provided by the differential voltage readout circuit. An array of such readout circuits can be used in an imager having an array of infrared detectors. The readout circuits can provide a high effective handling capacity.

Constrained sheath optics for high thrust density, low specific impulse ion thrusters

NASA Technical Reports Server (NTRS)

Wilbur, Paul J.; Han, Jian-Zhang

1987-01-01

The results of an experimental study showing that a contoured, fine wire mesh attached to the screen grid can be used to control the divergence characteristics of ion beamlets produced at low net-to-total accelerating voltage ratios are presented. The influence of free and constrained-sheath optics systems on beamlet divergence characteristics are found to be similar in the operating regime investigated, but it was found that constrained-sheath optics systems can be operated at higher perveance levels than free-sheath ones. The concept of a fine wire interference probe that can be used to study ion beamlet focusing behavior is introduced. This probe is used to demonstrate beamlet focusing to a diameter about one hundreth of the screen grid extraction aperture diameter. Additional testing is suggested to define an optimally contoured mesh that could yield well focused beamlets at net-to-total accelerating voltage ratios below about 0.1.

The effects of magnetic field in plume region on the performance of multi-cusped field thruster

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Peng, E-mail: hupengemail@126.com; Liu, Hui, E-mail: thruster@126.com; Yu, Daren

2015-10-15

The performance characteristics of a Multi-cusped Field Thruster depending on the magnetic field in the plume region were investigated. Five magnetic field shielding rings were separately mounted near the exit of discharge channel to decrease the strength of magnetic field in the plume region in different levels, while the magnetic field in the upstream was well maintained. The test results show that the electron current increases with the decrease of magnetic field strength in the plume region, which gives rise to higher propellant utilization and lower current utilization. On the other hand, the stronger magnetic field in the plume regionmore » improves the performance at low voltages (high current mode) while lower magnetic field improves the performance at high voltages (low current mode). This work can provide some optimal design ideas of the magnetic strength in the plume region to improve the performance of thruster.« less

Polymer solar cells with enhanced open-circuit voltage and efficiency

NASA Astrophysics Data System (ADS)

Chen, Hsiang-Yu; Hou, Jianhui; Zhang, Shaoqing; Liang, Yongye; Yang, Guanwen; Yang, Yang; Yu, Luping; Wu, Yue; Li, Gang

2009-11-01

Following the development of the bulk heterojunction structure, recent years have seen a dramatic improvement in the efficiency of polymer solar cells. Maximizing the open-circuit voltage in a low-bandgap polymer is one of the critical factors towards enabling high-efficiency solar cells. Study of the relation between open-circuit voltage and the energy levels of the donor/acceptor in bulk heterojunction polymer solar cells has stimulated interest in modifying the open-circuit voltage by tuning the energy levels of polymers. Here, we show that the open-circuit voltage of polymer solar cells constructed based on the structure of a low-bandgap polymer, PBDTTT, can be tuned, step by step, using different functional groups, to achieve values as high as 0.76 V. This increased open-circuit voltage combined with a high short-circuit current density results in a polymer solar cell with a power conversion efficiency as high as 6.77%, as certified by the National Renewable Energy Laboratory.

Voltage dips at the terminals of wind power installations

NASA Astrophysics Data System (ADS)

Bollen, Math H. J.; Olguin, Gabriel; Martins, Marcia

2005-07-01

This article gives an overview of the kind of voltage dips that can be expected at the terminals of a wind power installation. The overview is based on the study of those dips at the terminals of industrial installations and provides a guideline for the testing of wind power installations against voltage dips. For voltage dips due to faults, a classification into different types is presented. Five types appear at the terminals of sensitive equipment and thus have to be included when testing the wind power installation against disturbances coming from the grid. A distinction is made between installations connected at transmission level and those connected at distribution level. For the latter the phase angle jump has to be considered. Dips due to other causes (motor, transformer and capacitor switching) are briefly discussed as well as the voltage recovery after a dip. Finally some thoughts are presented on the way in which voltage tolerance requirements should be part of the design process for wind power installations. Copyright

Twin lead ballistic conductor based on nanoribbon edge transport

NASA Astrophysics Data System (ADS)

Konôpka, Martin; Dieška, Peter

2018-03-01

If a device like a graphene nanoribbon (GNR) has all its four corners attached to electric current leads, the device becomes a quantum junction through which two electrical circuits can interact. We study such system theoretically for stationary currents. The 4-point energy-dependent conductance matrix of the nanostructure and the classical resistors in the circuits are parameters of the model. The two bias voltages in the circuits are the control variables of the studied system while the electrochemical potentials at the device's terminals are non-trivially dependent on the voltages. For the special case of the linear-response regime analytical formulae for the operation of the coupled quantum-classical device are derived and applied. For higher bias voltages numerical solutions are obtained. The effects of non-equilibrium Fermi levels are captured using a recursive algorithm in which self-consistency between the electrochemical potentials and the currents is reached within few iterations. The developed approach allows to study scenarios ranging from independent circuits to strongly coupled ones. For the chosen model of the GNR with highly conductive zigzag edges we determine the regime in which the single device carries two almost independent currents.

Direct current uninterruptible power supply method and system

DOEpatents

Sinha, Gautam

2003-12-02

A method and system are described for providing a direct current (DC) uninterruptible power supply with the method including, for example: continuously supplying fuel to a turbine; converting mechanical power from the turbine into alternating current (AC) electrical power; converting the AC electrical power to DC power within a predetermined voltage level range; supplying the DC power to a load; and maintaining a DC load voltage within the predetermined voltage level range by adjusting the amount of fuel supplied to the turbine.

Measured radial dependence of the peak sheath voltages present in very high frequency capacitive discharges

DOE PAGES

Barnat, E. V.; Miller, P. A.; Hebner, G. A.; ...

2007-05-16

In this paper, the radial distribution of the measured voltage drop across a sheath formed between a 300mm electrode and an argon plasma discharge is shown to depend on the excitation radio frequency, under constant power and pressure conditions. At a lower frequency of 13.56MHz, the voltage drop across the sheath is uniform across the 300mm electrode, while at higher frequencies of 60 and 162MHz the voltage drop becomes radially nonuniform. Finally, the magnitude and spatial extent of the nonuniformity become greater with increasing frequency.

Overcharge and overdischarge protection of ambient temperature secondary lithium cells

NASA Technical Reports Server (NTRS)

Huang, Chen-Kuo (Inventor); Surampudi, Subbarao (Inventor); Attia, Alan I. (Inventor); Halpert, Gerald (Inventor)

1994-01-01

A cathode additive is provided for protecting an ambient temperature secondary lithium cell from overcharging or overdischarging. The cathode additive is chosen to create an upper voltage plateau which is slightly higher than a characteristic charge cutoff voltage of the cathode of the cell. The cathode additive additionally creates a lower voltage plateau which is slightly lower than the characteristic discharge cutoff voltage of the cell. Preferably, the cathode additive is a transition metal oxide or a sulfide and may, for example, include a mixture of Li2Mn2O4 and Li(0.1)MoO2.

DC High Voltage Conditioning of Photoemission Guns at Jefferson Lab FEL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hernandez-Garcia, C.; Benson, S. V.; Biallas, G.

2009-08-04

DC high voltage photoemission electron guns with GaAs photocathodes have been used to produce polarized electron beams for nuclear physics experiments for about 3 decades with great success. In the late 1990s, Jefferson Lab adopted this gun technology for a free electron laser (FEL), but to assist with high bunch charge operation, considerably higher bias voltage is required compared to the photoguns used at the Jefferson Lab Continuous Electron Beam Accelerator Facility. The FEL gun has been conditioned above 400 kV several times, albeit encountering non-trivial challenges with ceramic insulators and field emission from electrodes. Recently, high voltage processing withmore » krypton gas was employed to process very stubborn field emitters. This work presents a summary of the high voltage techniques used to high voltage condition the Jefferson Lab FEL photoemission gun.« less

High time resolution measurements of rocket potential changes induced by electron beam emission

NASA Technical Reports Server (NTRS)

Raitt, W. J.; Myers, N. B.; Williamson, P. R.; Banks, P. M.; Kawashima, N.

1984-01-01

The transient charging and photon emission from the vacuum chamber testing of the Cooperative High Altitude Rocket Gun Experiment are studied. Graphs of the mother-daughter voltage versus time and high time resolution data related to the return current to the vehicle are examined. It is observed that for average sounding rocket densities of 10 to the -6th torr the slope of the voltage rise of the rocket begins to flatten 40 microsec after the onset of electron beam emission, and for higher gas pressure the rocket reaches a maximum voltage of 25 or 30 microsec after the onset of electron beam emission. The data reveal that the return current mechanism for the higher gas pressure is through the sheath.

Silicon Carbide Diodes Characterization at High Temperature and Comparison With Silicon Devices

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry D., Jr.

2004-01-01

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the higher temperatures and higher frequencies.

High-voltage electrical burns due to copper theft - Case series.

PubMed

Braga, M J; Oliveira, I; Egipto, P; Silva, A

2016-03-31

Electrical burns are among the most devastating trauma inflicted on the human body. These burns have a higher morbidity, length of stay and a much higher risk of amputation than any other type of burn. Electrical burns affect mostly young, working males because they are more frequently the result of a work accident. However, possibly due to the worldwide economic crisis, we are experiencing a new phenomenon: the theft of high-voltage copper wiring.

Regulation of Kv2.1 K+ conductance by cell surface channel density

PubMed Central

Fox, Philip D.; Loftus, Rob J.; Tamkun, Michael M.

2013-01-01

The Kv2.1 voltage-gated K+ channel is found both freely diffusing over the plasma membrane and concentrated in micron-sized clusters localized to the soma, proximal dendrites and axon initial segment of hippocampal neurons. In transfected HEK cells, Kv2.1 channels within cluster microdomains are non-conducting. Using TIRF microscopy the number of GFP-tagged Kv2.1 channels on the HEK cell surface was compared to K+ channel conductance measured by whole-cell voltage-clamp of the same cell. This approach indicated that as channel density increases non-clustered channels cease conducting. At the highest density observed, only 4% of all channels were conducting. Mutant Kv2.1 channels that fail to cluster also possessed the non-conducting state with 17% conducting K+ at higher surface densities. The non-conducting state was specific to Kv2.1 as Kv1.4 was always conducting regardless of the cell-surface expression level. Anti-Kv2.1 immuno-fluorescence intensity, standardized to Kv2.1 surface density in transfected HEK cells, was used to determine the expression levels of endogenous Kv2.1 in cultured rat hippocampal neurons. Endogenous Kv2.1 levels were compared to the number of conducting channels determined by whole-cell voltage clamp. Only 13 and 27% of the endogenous Kv2.1 was conducting in neurons cultured for 14 and 20 days, respectively. Together these data indicate that the non-conducting state depends primarily on surface density as opposed to cluster location and that this non-conducting state also exists for native Kv2.1 found in cultured hippocampal neurons. This excess of Kv2.1 protein relative to K+ conductance further supports a non-conducting role for Kv2.1 in excitable tissues. PMID:23325261

Voltage-dependent motion of the catalytic region of voltage-sensing phosphatase monitored by a fluorescent amino acid

PubMed Central

Sakata, Souhei; Jinno, Yuka; Kawanabe, Akira; Okamura, Yasushi

2016-01-01

The cytoplasmic region of voltage-sensing phosphatase (VSP) derives the voltage dependence of its catalytic activity from coupling to a voltage sensor homologous to that of voltage-gated ion channels. To assess the conformational changes in the cytoplasmic region upon activation of the voltage sensor, we genetically incorporated a fluorescent unnatural amino acid, 3-(6-acetylnaphthalen-2-ylamino)-2-aminopropanoic acid (Anap), into the catalytic region of Ciona intestinalis VSP (Ci-VSP). Measurements of Anap fluorescence under voltage clamp in Xenopus oocytes revealed that the catalytic region assumes distinct conformations dependent on the degree of voltage-sensor activation. FRET analysis showed that the catalytic region remains situated beneath the plasma membrane, irrespective of the voltage level. Moreover, Anap fluorescence from a membrane-facing loop in the C2 domain showed a pattern reflecting substrate turnover. These results indicate that the voltage sensor regulates Ci-VSP catalytic activity by causing conformational changes in the entire catalytic region, without changing their distance from the plasma membrane. PMID:27330112

Voltage-dependent motion of the catalytic region of voltage-sensing phosphatase monitored by a fluorescent amino acid.

PubMed

Sakata, Souhei; Jinno, Yuka; Kawanabe, Akira; Okamura, Yasushi

2016-07-05

The cytoplasmic region of voltage-sensing phosphatase (VSP) derives the voltage dependence of its catalytic activity from coupling to a voltage sensor homologous to that of voltage-gated ion channels. To assess the conformational changes in the cytoplasmic region upon activation of the voltage sensor, we genetically incorporated a fluorescent unnatural amino acid, 3-(6-acetylnaphthalen-2-ylamino)-2-aminopropanoic acid (Anap), into the catalytic region of Ciona intestinalis VSP (Ci-VSP). Measurements of Anap fluorescence under voltage clamp in Xenopus oocytes revealed that the catalytic region assumes distinct conformations dependent on the degree of voltage-sensor activation. FRET analysis showed that the catalytic region remains situated beneath the plasma membrane, irrespective of the voltage level. Moreover, Anap fluorescence from a membrane-facing loop in the C2 domain showed a pattern reflecting substrate turnover. These results indicate that the voltage sensor regulates Ci-VSP catalytic activity by causing conformational changes in the entire catalytic region, without changing their distance from the plasma membrane.

Evaluation of entrance surface air kerma in pediatric chest radiography

NASA Astrophysics Data System (ADS)

Porto, L.; Lunelli, N.; Paschuk, S.; Oliveira, A.; Ferreira, J. L.; Schelin, H.; Miguel, C.; Denyak, V.; Kmiecik, C.; Tilly, J.; Khoury, H.

2014-11-01

The objective of this study was to evaluate the entrance surface air kerma in pediatric chest radiography. An evaluation of 301 radiographical examinations in anterior-posterior (AP) and posterior-anterior (PA) (166 examinations) and lateral (LAT) (135 examinations) projections was performed. The analyses were performed on patients grouped by age; the groups included ages 0-1 y, 1-5 y, 5-10 y, and 10-15 y. The entrance surface air kerma was determined with DoseCal software (Radiological Protection Center of Saint George's Hospital, London) and thermoluminescent dosimeters. Two different exposure techniques were compared. The doses received by patients who had undergone LAT examinations were 40% higher, on average, those in AP/PA examinations because of the difference in tube voltage. A large high-dose “tail” was observed for children up to 5 y old. An increase in tube potential and corresponding decrease in current lead to a significant dose reduction. The difference between the average dose values for different age ranges was not practically observed, implying that the exposure techniques are still not optimal. Exposure doses received using the higher tube voltage and lower current-time product correspond to the international diagnostic reference levels.

Performance degradation of grid-tied photovoltaic modules in a hot-dry climatic condition

NASA Astrophysics Data System (ADS)

Suleske, Adam; Singh, Jaspreet; Kuitche, Joseph; Tamizh-Mani, Govindasamy

2011-09-01

The crystalline silicon photovoltaic (PV) modules under open circuit conditions typically degrade at a rate of about 0.5% per year. However, it is suspected that the modules in an array level may degrade, depending on equipment/frame grounding and array grounding, at higher rates because of higher string voltage and increased module mismatch over the years of operation in the field. This paper compares and analyzes the degradation rates of grid-tied photovoltaic modules operating over 10-17 years in a desert climatic condition of Arizona. The nameplate open-circuit voltages of the arrays ranged between 400 and 450 V. Six different types/models of crystalline silicon modules with glass/glass and glass/polymer constructions were evaluated. About 1865 modules were inspected using an extended visual inspection checklist and infrared (IR) scanning. The visual inspection checklist included encapsulant discoloration, cell/interconnect cracks, delamination and corrosion. Based on the visual inspection and IR studies, a large fraction of these modules were identified as allegedly healthy and unhealthy modules and they were electrically isolated from the system for currentvoltage (I-V) measurements of individual modules. The annual degradation rate for each module type is determined based on the I-V measurements.

Electrokinetic remediation of contaminated soil with waste-lubricant oils and zinc.

PubMed

Park, Sung-Woo; Lee, Jae-Young; Yang, Jung-Seok; Kim, Kyoung-Jo; Baek, Kitae

2009-09-30

The feasibility of electrokinetic technology on the remediation of mixed-waste-contaminated railroad soil, contaminated by lubricant oil and zinc, was investigated. To enhance the removal efficiency, catholyte purging with 0.1M HNO(3) and a supply of non-ionic surfactant, secondary alcohol ethoxylate, was applied to the anode to remove Zn and to solubilize the lubricant oil. The catholyte purging maintained the soil pH as acidic and enhanced desorption of zinc from the soil, where the zeta potential of the acidic soil became positive. Thereafter, the direction of electro-osmotic flow was changed from the cathode to anode and the flow rate was reduced. The lesser in magnitude reverse electro-osmotic flow inhibited the migration of zinc and the lubricant oil was removed by the electro-osmotic flow. The removal of zinc and lubricant oil was enhanced with an increase in voltage gradient; however, a higher voltage gradient resulted in higher energy expenditure. After electrokinetic operation over 17 days, the removal efficiency of zinc was 22.1-24.3%, and that of lubricant oil was 45.1-55.0%. Although the removal of lubricant oil was quite high, the residual concentration did not meet Korean regulation levels.

High ESD Breakdown-Voltage InP HBT Transimpedance Amplifier IC for Optical Video Distribution Systems

NASA Astrophysics Data System (ADS)

Sano, Kimikazu; Nagatani, Munehiko; Mutoh, Miwa; Murata, Koichi

This paper is a report on a high ESD breakdown-voltage InP HBT transimpedance amplifier IC for optical video distribution systems. To make ESD breakdown-voltage higher, we designed ESD protection circuits integrated in the TIA IC using base-collector/base-emitter diodes of InP HBTs and resistors. These components for ESD protection circuits have already existed in the employed InP HBT IC process, so no process modifications were needed. Furthermore, to meet requirements for use in optical video distribution systems, we studied circuit design techniques to obtain a good input-output linearity and a low-noise characteristic. Fabricated InP HBT TIA IC exhibited high human-body-model ESD breakdown voltages (±1000V for power supply terminals, ±200V for high-speed input/output terminals), good input-output linearity (less than 2.9-% duty-cycle-distortion), and low noise characteristic (10.7pA/√Hz averaged input-referred noise current density) with a -3-dB-down higher frequency of 6.9GHz. To the best of our knowledge, this paper is the first literature describing InP ICs with high ESD-breakdown voltages.

Dynamic response characteristics analysis of the doubly-fed wind power system under grid voltage drop

NASA Astrophysics Data System (ADS)

Chen, Y.; Wang, J.; Wang, H. H.; Yang, L.; Chen, W.; Xu, Y. T.

2016-08-01

Double-fed induction generator (DFIG) is sensitive to the disturbances of grid, so the security and stability of the grid and the DFIG itself are under threat with the rapid increase of DFIG. Therefore, it is important to study dynamic response of the DFIG when voltage drop failure is happened in power system. In this paper, firstly, mathematical models and the control strategy about mechanical and electrical response processes is respectively introduced. Then through the analysis of response process, it is concluded that the dynamic response characteristics are related to voltage drop level, operating status of DFIG and control strategy adapted to rotor side. Last, the correctness of conclusion is validated by the simulation about mechanical and electrical response processes in different voltage levels drop and different DFIG output levels under DIgSILENT/PowerFactory software platform.

High-Voltage Clock Driver for Photon-Counting CCD Characterization

NASA Technical Reports Server (NTRS)

Baker, Robert

2013-01-01

A document discusses the CCD97 from e2v technologies as it is being evaluated at Goddard Space Flight Center's Detector Characterization Laboratory (DCL) for possible use in ultra-low background noise space astronomy applications, such as Terrestrial Planet Finder Coronagraph (TPF-C). The CCD97 includes a photoncounting mode where the equivalent output noise is less than one electron. Use of this mode requires a clock signal at a voltage level greater than the level achievable by the existing CCD (charge-coupled-device) electronics. A high-voltage waveform generator has been developed in code 660/601 to support the CCD97 evaluation. The unit generates required clock waveforms at voltage levels from -20 to +50 V. It deals with standard and arbitrary waveforms and supports pixel rates from 50 to 500 kHz. The system is designed to interface with existing Leach CCD electronics.

Fast, Low-Power, Hysteretic Level-Detector Circuit

NASA Technical Reports Server (NTRS)

Arditti, Mordechai

1993-01-01

Circuit for detection of preset levels of voltage or current intended to replace standard fast voltage comparator. Hysteretic analog/digital level detector operates at unusually low power with little sacrifice of speed. Comprises low-power analog circuit and complementary metal oxide/semiconductor (CMOS) digital circuit connected in overall closed feedback loop to decrease rise and fall times, provide hysteresis, and trip-level control. Contains multiple subloops combining linear and digital feedback. Levels of sensed signals and hysteresis level easily adjusted by selection of components to suit specific application.

High Power Microwave (HPM) and Ionizing Radiation Effects on CMOS Devices

DTIC Science & Technology

2010-03-01

24 xviii Symbol Page VIH minimum input voltage for proper high voltage output...38 VOH output voltage corresponding to VIH ...design. The high level at the input, VIH , along with VDD, define the maximum permitted “Logic 1” region, which allows for proper state change for a

Grid Integration of Single Stage Solar PV System using Three-level Voltage Source Converter

NASA Astrophysics Data System (ADS)

Hussain, Ikhlaq; Kandpal, Maulik; Singh, Bhim

2016-08-01

This paper presents a single stage solar PV (photovoltaic) grid integrated power generating system using a three level voltage source converter (VSC) operating at low switching frequency of 900 Hz with robust synchronizing phase locked loop (RS-PLL) based control algorithm. To track the maximum power from solar PV array, an incremental conductance algorithm is used and this maximum power is fed to the grid via three-level VSC. The use of single stage system with three level VSC offers the advantage of low switching losses and the operation at high voltages and high power which results in enhancement of power quality in the proposed system. Simulated results validate the design and control algorithm under steady state and dynamic conditions.

Detecting electroporation by assessing the time constants in the exponential response of human skin to voltage controlled impulse electrical stimulation.

PubMed

Bîrlea, Sinziana I; Corley, Gavin J; Bîrlea, Nicolae M; Breen, Paul P; Quondamatteo, Fabio; OLaighin, Gearóid

2009-01-01

We propose a new method for extracting the electrical properties of human skin based on the time constant analysis of its exponential response to impulse stimulation. As a result of this analysis an adjacent finding has arisen. We have found that stratum corneum electroporation can be detected using this analysis method. We have observed that a one time-constant model is appropriate for describing the electrical properties of human skin at low amplitude applied voltages (<30V), and a two time-constant model best describes skin electrical properties at higher amplitude applied voltages (>30V). Higher voltage amplitudes (>30V) have been proven to create pores in the skin's stratum corneum which offer a new, lower resistance, pathway for the passage of current through the skin. Our data shows that when pores are formed in the stratum corneum they can be detected, in-vivo, due to the fact that a second time constant describes current flow through them.

75 FR 38943 - Airworthiness Directives; McDonnell Douglas Corporation Model DC-10-10, DC-10-10F, DC-10-30, DC...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-07-07

... system, which could cause voltage levels to go beyond original design levels between fuel tank probes and... following methods: Federal eRulemaking Portal: Go to http://www.regulations.gov . Follow the instructions...-induced transients to the fuel quantity indication system, which could cause voltage levels to go beyond...

Determination of appropriate DC voltage for switched mode power supply (SMPS) loads

NASA Astrophysics Data System (ADS)

Setiawan, Eko Adhi; Setiawan, Aiman; Purnomo, Andri; Djamal, Muchlishah Hadi

2017-03-01

Nowadays, most of modern and efficient household electronic devices operated based on Switched Mode Power Supply (SMPS) technology which convert AC voltage from the grid to DC voltage. Based on theory and experiment, SMPS loads could be supplied by DC voltage. However, the DC voltage rating to energize electronic home appliances is not standardized yet. This paper proposed certain method to determine appropriate DC voltage, and investigated comparison of SMPS power consumption which is supplied from AC and DC voltage. To determine the appropriate DC voltage, lux value of several lamps which have same specification energized by using AC voltage and the results is using as reference. Then, the lamps were supplied by various DC voltage to obtain the trends of the lux value to the applied DC voltage. After that, by using the trends and the reference lux value, the appropriate DC voltage can be determined. Furthermore, the power consumption on home appliances such as mobile phone, laptop and personal computer by using AC voltage and the appropriate DC voltage were conducted. The results show that the total power consumption of AC system is higher than DC system. The total power (apparent power) consumed by the lamp, mobile phone and personal computer which operated in 220 VAC were 6.93 VA, 34.31 VA and 105.85 VA respectively. On the other hand, under 277 VDC the load consumption were 5.83 W, 19.11 W and 74.46 W respectively.

Multijunction high voltage concentrator solar cells

NASA Technical Reports Server (NTRS)

Valco, G. J.; Kapoor, V. J.; Evans, J. C.; Chai, A.-T.

1981-01-01

The standard integrated circuit technology has been developed to design and fabricate new innovative planar multi-junction solar cell chips for concentrated sunlight applications. This 1 cm x 1 cm cell consisted of several voltage generating regions called unit cells which were internally connected in series within a single chip resulting in high open circuit voltages. Typical open-circuit voltages of 3.6 V and short-circuit currents of 90 ma were obtained at 80 AM1 suns. A dramatic increase in both short circuit current and open circuit voltage with increased light levels was observed.

An Estimation Method of System Voltage Sag Profile using Recorded Sag Data

NASA Astrophysics Data System (ADS)

Tanaka, Kazuyuki; Sakashita, Tadashi

The influence of voltage sag to electric equipment has become big issues because of wider utilization of voltage sensitive devices. In order to reduce the influence of voltage sag appearing at each customer side, it is necessary to recognize the level of receiving voltage drop due to lightning faults for transmission line. However it is hard to measure directly those sag level at every load node. In this report, a new method of efficiently estimating system voltage sag profile is proposed based on symmetrical coordinate. In the proposed method, limited recorded sag data is used as the estimation condition which is recorded at each substation in power systems. From the point of view that the number of the recorded node is generally far less than those of the transmission route, a fast solution method is developed to calculate only recorder faulted voltage by applying reciprocity theorem for Y matrix. Furthermore, effective screening process is incorporated, in which the limited candidate of faulted transmission line can be chosen. Demonstrative results are presented using the IEEJ East10 standard system and actual 1700 bus system. The results show that estimation accuracy is sufficiently acceptable under less computation labor.

Bidirectional buck boost converter

DOEpatents

Esser, Albert Andreas Maria

1998-03-31

A bidirectional buck boost converter and method of operating the same allows regulation of power flow between first and second voltage sources in which the voltage level at each source is subject to change and power flow is independent of relative voltage levels. In one embodiment, the converter is designed for hard switching while another embodiment implements soft switching of the switching devices. In both embodiments, first and second switching devices are serially coupled between a relatively positive terminal and a relatively negative terminal of a first voltage source with third and fourth switching devices serially coupled between a relatively positive terminal and a relatively negative terminal of a second voltage source. A free-wheeling diode is coupled, respectively, in parallel opposition with respective ones of the switching devices. An inductor is coupled between a junction of the first and second switching devices and a junction of the third and fourth switching devices. Gating pulses supplied by a gating circuit selectively enable operation of the switching devices for transferring power between the voltage sources. In the second embodiment, each switching device is shunted by a capacitor and the switching devices are operated when voltage across the device is substantially zero.

Bidirectional buck boost converter

DOEpatents

Esser, A.A.M.

1998-03-31

A bidirectional buck boost converter and method of operating the same allows regulation of power flow between first and second voltage sources in which the voltage level at each source is subject to change and power flow is independent of relative voltage levels. In one embodiment, the converter is designed for hard switching while another embodiment implements soft switching of the switching devices. In both embodiments, first and second switching devices are serially coupled between a relatively positive terminal and a relatively negative terminal of a first voltage source with third and fourth switching devices serially coupled between a relatively positive terminal and a relatively negative terminal of a second voltage source. A free-wheeling diode is coupled, respectively, in parallel opposition with respective ones of the switching devices. An inductor is coupled between a junction of the first and second switching devices and a junction of the third and fourth switching devices. Gating pulses supplied by a gating circuit selectively enable operation of the switching devices for transferring power between the voltage sources. In the second embodiment, each switching device is shunted by a capacitor and the switching devices are operated when voltage across the device is substantially zero. 20 figs.

Performance of a dual anode nickel-hydrogen cell

NASA Technical Reports Server (NTRS)

Gahn, Randall F.

1991-01-01

An experimental study was conducted to characterize the voltage performance of a nickel hydrogen cell containing a hydrogen electrode on both sides of the nickel electrode. The dual anode cell was compared with a convenient single anode cell using the same nickel electrode. Higher discharge voltages and lower charge voltages were obtained with the dual anode cell during constant current discharges to 10C, pulse discharges to 8C, and polarization measurements at 50 percent of charge.

Optimization of the Ion Source-Mass Spectrometry Parameters in Non-Steroidal Anti-Inflammatory and Analgesic Pharmaceuticals Analysis by a Design of Experiments Approach

NASA Astrophysics Data System (ADS)

Paíga, Paula; Silva, Luís M. S.; Delerue-Matos, Cristina

2016-10-01

The flow rates of drying and nebulizing gas, heat block and desolvation line temperatures and interface voltage are potential electrospray ionization parameters as they may enhance sensitivity of the mass spectrometer. The conditions that give higher sensitivity of 13 pharmaceuticals were explored. First, Plackett-Burman design was implemented to screen significant factors, and it was concluded that interface voltage and nebulizing gas flow were the only factors that influence the intensity signal for all pharmaceuticals. This fractionated factorial design was projected to set a full 22 factorial design with center points. The lack-of-fit test proved to be significant. Then, a central composite face-centered design was conducted. Finally, a stepwise multiple linear regression and subsequently an optimization problem solving were carried out. Two main drug clusters were found concerning the signal intensities of all runs of the augmented factorial design. p-Aminophenol, salicylic acid, and nimesulide constitute one cluster as a result of showing much higher sensitivity than the remaining drugs. The other cluster is more homogeneous with some sub-clusters comprising one pharmaceutical and its respective metabolite. It was observed that instrumental signal increased when both significant factors increased with maximum signal occurring when both codified factors are set at level +1. It was also found that, for most of the pharmaceuticals, interface voltage influences the intensity of the instrument more than the nebulizing gas flowrate. The only exceptions refer to nimesulide where the relative importance of the factors is reversed and still salicylic acid where both factors equally influence the instrumental signal.

Temperature dependent charge transport studies across thermodynamic glass transition in P3HT:PCBM bulk heterojunction: insight from J-V and impedance spectroscopy

NASA Astrophysics Data System (ADS)

Sarkar, Atri; Rahaman, Abdulla Bin; Banerjee, Debamalya

2018-03-01

Temperature dependent charge transport properties of P3HT:PCBM bulk heterojunction are analysed by dc and ac measurements under dark conditions across a wide temperature range of 110-473 K, which includes the thermodynamic glass transition temperature (Tg ˜320 K) of the system. A change from Ohmic conduction to space charge limited current conduction at higher (⩾1.2 V) applied bias voltages above  ⩾200 K is observed from J-V characteristics. From capacitance-voltage (C-V) measurement at room temperature, the occurrence of a peak near the built-in voltage is observed below the dielectric relaxation frequency, originating from the competition between drift and diffusion driven motions of charges. Carrier concentration (N) is calculated from C-V measurements taken at different temperatures. Room temperature mobility values at various applied bias voltages are in accordance with that obtained from transient charge extraction by linearly increasing voltage measurement. Sample impedance is measured over five decades of frequency across temperature range by using lock-in detection. This data is used to extract temperature dependence of carrier mobility (μ), and dc conductivity (σ_dc ) which is low frequency extrapolation of ac conductivity. An activation energy of  ˜126 meV for the carrier hopping process at the metal-semiconductor interface is estimated from temperature dependence of σ_dc . Above T g, μ levels off to a constant value, whereas σ_dc starts to decrease after a transition knee at T g that can be seen as a combined effect of changes in μ and N. All these observed changes across T g can be correlated to enhanced polymer motion above the glass transition.

Design, Control, and Modeling of a New Voltage Source Converter for HVDC System

NASA Astrophysics Data System (ADS)

Mohan, Madhan; Singh, Bhim; Ketan Panigrahi, Bijaya

2013-05-01

Abstract: A New Voltage Source Converter (VSC) based on neutral clamped three-level circuit is proposed for High Voltage DC (HVDC) system. The proposed VSC is designed in a multipulse configuration. The converter is operated by Fundamental Frequency Switching (FFS). A new control method is developed for achieving all the necessary control aspects of HVDC system such as independent real and reactive power control, bidirectional real and reactive power control. The basic of the control method is varying the pulse width and by keeping the dc link voltage constant. The steady state and dynamic performances of HVDC system interconnecting two different frequencies network are demonstrated for active and reactive power control. Total number of transformers used in this system are reduced to half in comparison with the two-level VSCs for both active and reactive power control. The performance of the HVDC system is improved in terms of reduced harmonics level even at fundamental frequency switching. The harmonic performance of the designed converter is also studied for different value of the dead angle (β), and the optimized range of the dead angle is achieved for varying reactive power requirement. Simulation results are presented for the designed three level multipulse voltage source converters with the proposed control algorithm.

[Optimal beam quality for chest digital radiography].

PubMed

Oda, Nobuhiro; Tabata, Yoshito; Nakano, Tsutomu

2014-11-01

To investigate the optimal beam quality for chest computed radiography (CR), we measured the radiographic contrast and evaluated the image quality of chest CR using various X-ray tube voltages. The contrast between lung and rib or heart increased on CR images obtained by lowering the tube voltage from 140 to 60 kV, but the degree of increase was less. Scattered radiation was reduced on CR images with a lower tube voltage. The Wiener spectrum of CR images with a low tube voltage showed a low value under identical conditions of amount of light stimulated emission. The quality of chest CR images obtained using a lower tube voltage (80 kV and 100 kV) was evaluated as being superior to those obtained with a higher tube voltage (120 kV and 140 kV). Considering the problem of tube loading and exposure in clinical applications, a tube voltage of 90 to 100 kV (0.1 mm copper filter backed by 0.5 mm aluminum) is recommended for chest CR.

Dimerization of the voltage-sensing phosphatase controls its voltage-sensing and catalytic activity.

PubMed

Rayaprolu, Vamseedhar; Royal, Perrine; Stengel, Karen; Sandoz, Guillaume; Kohout, Susy C

2018-05-07

Multimerization is a key characteristic of most voltage-sensing proteins. The main exception was thought to be the Ciona intestinalis voltage-sensing phosphatase (Ci-VSP). In this study, we show that multimerization is also critical for Ci-VSP function. Using coimmunoprecipitation and single-molecule pull-down, we find that Ci-VSP stoichiometry is flexible. It exists as both monomers and dimers, with dimers favored at higher concentrations. We show strong dimerization via the voltage-sensing domain (VSD) and weak dimerization via the phosphatase domain. Using voltage-clamp fluorometry, we also find that VSDs cooperate to lower the voltage dependence of activation, thus favoring the activation of Ci-VSP. Finally, using activity assays, we find that dimerization alters Ci-VSP substrate specificity such that only dimeric Ci-VSP is able to dephosphorylate the 3-phosphate from PI(3,4,5)P 3 or PI(3,4)P 2 Our results indicate that dimerization plays a significant role in Ci-VSP function. © 2018 Rayaprolu et al.

High-voltage electrical burns due to copper theft – Case series

PubMed Central

Braga, M.J.; Oliveira, I.; Egipto, P.; Silva, A.

2016-01-01

Summary Electrical burns are among the most devastating trauma inflicted on the human body. These burns have a higher morbidity, length of stay and a much higher risk of amputation than any other type of burn. Electrical burns affect mostly young, working males because they are more frequently the result of a work accident. However, possibly due to the worldwide economic crisis, we are experiencing a new phenomenon: the theft of high-voltage copper wiring. PMID:27857650

Test Report - Fault Current Through Graphite Filament Reinforced Plastic

NASA Technical Reports Server (NTRS)

Evans, R. W.

1997-01-01

Tests were performed to determine the damage to samples of composite material when a current carrying wire is shorted to the surface of the composite material, and to determine whether enough current can flow through the material to blow a fuse before damage can occur. Fault current tests were performed on samples of graphite epoxy materials. Samples consisted of six layers of IM7 graphite fiber mat in Hercules 8552 epoxy resin. A variable power supply provided up to 35 amps of current. The high voltage side of the power supply was attached to a wire at the end of a hinged arm, and the low side was attached to the edge of the sample. To test joints, the return was connected to the edge of one sample, and the high side was shorted to the top of the other sample. Tests show that when current exceeds approximately 5 amps, the graphite glows, and the epoxy melts out at the shorted contact. At higher current levels the epoxy burns. At voltages above 15 volts the epoxy outer coat is easily broken, and fire, flame, and a rise in current occur suddenly. When joints are introduced, resistance is increased, and the maximum current resulting from a short circuit to the graphite epoxy is reduced. This condition can easily result in fault current lower than the circuit breaker limit and higher than the 5 amp ignition level. The shorting contact and the joint become hot spots with melting epoxy, smoke, and fire.

Characteristics of MAO coating obtained on ZK60 Mg alloy under two and three steps voltage-increasing modes in dual electrolyte

NASA Astrophysics Data System (ADS)

Yang, Jun; Wang, Ze-Xin; Lu, Sheng; Lv, Wei-gang; Jiang, Xi-zhi; Sun, Lei

2017-03-01

The micro-arc oxidation process was conducted on ZK60 Mg alloy under two and three steps voltage-increasing modes by DC pulse electrical source. The effect of each mode on current-time responses during MAO process and the coating characteristic were analysed and discussed systematically. The microstructure, thickness and corrosion resistance of MAO coatings were evaluated by scanning electron microscopy (SEM), energy disperse spectroscopy (EDS), microscope with super-depth of field and electrochemical impedance spectroscopy (EIS). The results indicate that two and three steps voltage-increasing modes can improve weak spark discharges with insufficient breakdown strength in later period during the MAO process. Due to higher value of voltage and voltage increment, the coating with maximum thickness of about 20.20μm formed under two steps voltage-increasing mode shows the best corrosion resistance. In addition, the coating fabricated under three steps voltage-increasing mode shows a smoother coating with better corrosion resistance due to the lower amplitude of voltage-increasing.

Novel switching method for single-phase NPC three-level inverter with neutral-point voltage control

NASA Astrophysics Data System (ADS)

Lee, June-Seok; Lee, Seung-Joo; Lee, Kyo-Beum

2018-02-01

This paper proposes a novel switching method with the neutral-point voltage control in a single-phase neutral-point-clamped three-level inverter (SP-NPCI) used in photovoltaic systems. A proposed novel switching method for the SP-NPCI improves the efficiency. The main concept is to fix the switching state of one leg. As a result, the switching loss decreases and the total efficiency is improved. In addition, it enables the maximum power-point-tracking operation to be performed by applying the proposed neutral-point voltage control algorithm. This control is implemented by modifying the reference signal. Simulation and experimental results provide verification of the performance of a novel switching method with the neutral-point voltage control.

Charging system and method for multicell storage batteries

DOEpatents

Cox, Jay A.

1978-01-01

A battery-charging system includes a first charging circuit connected in series with a plurality of battery cells for controlled current charging. A second charging circuit applies a controlled voltage across each individual cell for equalization of the cells to the fully charged condition. This controlled voltage is determined at a level above the fully charged open-circuit voltage but at a sufficiently low level to prevent corrosion of cell components by electrochemical reaction. In this second circuit for cell equalization, a transformer primary receives closely regulated, square-wave voltage which is coupled to a plurality of equal secondary coil windings. Each secondary winding is connected in parallel to each cell of a series-connected pair of cells through half-wave rectifiers and a shared, intermediate conductor.

Ion Voltage Diagnostics in the Far-Field Plume of a High-Specific Impulse Hall Thruster

NASA Technical Reports Server (NTRS)

Hofer, Richard R.; Haas, James M.; Gallimore, Alec D.

2003-01-01

The effects of the magnetic field and discharge voltage on the far-field plume of the NASA 173Mv2 laboratory-model Hall thruster were investigated. A cylindrical Langmuir probe was used to measure the plasma potential and a retarding potential analyzer was employed to measure the ion voltage distribution. The plasma potential was affected by relatively small changes in the external magnetic field, which suggested a means to control the plasma surrounding the thruster. As the discharge voltage increased, the ion voltage distribution showed that the acceleration efficiency increased and the dispersion efficiency decreased. This implied that the ionization zone was growing axially and moving closer to the anode, which could have affected thruster efficiency and lifetime due to higher wall losses. However, wall losses may have been reduced by improved focusing efficiency since the total efficiency increased and the plume divergence decreased with discharge voltage.

Electrical tree initiation in polyethylene absorbing Penning gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shimizu, N.; Tohyama, N.; Sato, H.

1996-12-31

Ac tree initiation voltage was examined in untreated LDPE, vacuum degassed LDPE and LDPE absorbing He gas (He gas was absorbed after vacuum degassing). The authors have already reported that vacuum degassed LDPE shows much higher tree initiation voltage than untreated one because of absence of oxygen. Therefore they expected that LDPE absorbing He shows the same property with vacuum degassed LDPE. However tree initiation voltage of LDPE absorbing He is as low as that of untreated LDPE. LDPE absorbing Ar gas shows the same tendency. He or Ar gas does not change so much impulse tree initiation voltage. LDPEmore » absorbing He was not well dyed with methylene blue after ac voltage application, which indicates that active oxidation does not occur. Low ac tree initiation voltage in LDPE absorbing He or Ar may be caused by Penning ionization in free volume.« less

Competitive behavior of photons contributing to junction voltage jump in narrow band-gap semiconductor multi-quantum-well laser diodes at lasing threshold

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Liefeng, E-mail: fengliefeng@tju.edu.cn, E-mail: lihongru@nankai.edu.cn; Yang, Xiufang; Wang, Cunda

2015-04-15

The junction behavior of different narrow band-gap multi-quantum-well (MQW) laser diodes (LDs) confirmed that the jump in the junction voltage in the threshold region is a general characteristic of narrow band-gap LDs. The relative change in the 1310 nm LD is the most obvious. To analyze this sudden voltage change, the threshold region is divided into three stages by I{sub th}{sup l} and I{sub th}{sup u}, as shown in Fig. 2; I{sub th}{sup l} is the conventional threshold, and as long as the current is higher than this threshold, lasing exists and the IdV/dI-I plot drops suddenly; I{sub th}{sup u}more » is the steady lasing point, at which the separation of the quasi-Fermi levels of electron and holes across the active region (V{sub j}) is suddenly pinned. Based on the evolutionary model of dissipative structure theory, the rate equations of the photons in a single-mode LD were deduced in detail at I{sub th}{sup l} and I{sub th}{sup u}. The results proved that the observed behavior of stimulated emission suddenly substituting for spontaneous emission, in a manner similar to biological evolution, must lead to a sudden increase in the injection carriers in the threshold region, which then causes the sudden increase in the junction voltage in this region.« less

A new balancing three level three dimensional space vector modulation strategy for three level neutral point clamped four leg inverter based shunt active power filter controlling by nonlinear back stepping controllers.

PubMed

Chebabhi, Ali; Fellah, Mohammed Karim; Kessal, Abdelhalim; Benkhoris, Mohamed F

2016-07-01

In this paper is proposed a new balancing three-level three dimensional space vector modulation (B3L-3DSVM) strategy which uses a redundant voltage vectors to realize precise control and high-performance for a three phase three-level four-leg neutral point clamped (NPC) inverter based Shunt Active Power Filter (SAPF) for eliminate the source currents harmonics, reduce the magnitude of neutral wire current (eliminate the zero-sequence current produced by single-phase nonlinear loads), and to compensate the reactive power in the three-phase four-wire electrical networks. This strategy is proposed in order to gate switching pulses generation, dc bus voltage capacitors balancing (conserve equal voltage of the two dc bus capacitors), and to switching frequency reduced and fixed of inverter switches in same times. A Nonlinear Back Stepping Controllers (NBSC) are used for regulated the dc bus voltage capacitors and the SAPF injected currents to robustness, stabilizing the system and to improve the response and to eliminate the overshoot and undershoot of traditional PI (Proportional-Integral). Conventional three-level three dimensional space vector modulation (C3L-3DSVM) and B3L-3DSVM are calculated and compared in terms of error between the two dc bus voltage capacitors, SAPF output voltages and THDv, THDi of source currents, magnitude of source neutral wire current, and the reactive power compensation under unbalanced single phase nonlinear loads. The success, robustness, and the effectiveness of the proposed control strategies are demonstrated through simulation using Sim Power Systems and S-Function of MATLAB/SIMULINK. Copyright © 2016 ISA. Published by Elsevier Ltd. All rights reserved.

Voltage-controlled spin selection in a magnetic resonant tunneling diode.

PubMed

Slobodskyy, A; Gould, C; Slobodskyy, T; Becker, C R; Schmidt, G; Molenkamp, L W

2003-06-20

We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.

A transient simulation approach to obtaining capacitance-voltage characteristics of GaN MOS capacitors with deep-level traps

NASA Astrophysics Data System (ADS)

Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Shimizu, Mitsuaki; Hashizume, Tamotsu

2018-04-01

In this study, GaN MOS capacitance-voltage device simulations considering various interface and bulk traps are performed in the transient mode. The simulations explain various features of capacitance-voltage curves, such as plateau, hysteresis, and frequency dispersions, which are commonly observed in measurements of GaN MOS capacitors and arise from complicated combinations of interface and bulk deep-level traps. The objective of the present study is to provide a good theoretical tool to understand the physics of various nonideal measured curves.

Mechanism of voltage-gated channel formation in lipid membranes.

PubMed

Guidelli, Rolando; Becucci, Lucia

2016-04-01

Although several molecular models for voltage-gated ion channels in lipid membranes have been proposed, a detailed mechanism accounting for the salient features of experimental data is lacking. A general treatment accounting for peptide dipole orientation in the electric field and their nucleation and growth kinetics with ion channel formation is provided. This is the first treatment that explains all the main features of the experimental current-voltage curves of peptides forming voltage-gated channels available in the literature. It predicts a regime of weakly voltage-dependent conductance, followed by one of strong voltage-dependent conductance at higher voltages. It also predicts values of the parameters expressing the exponential dependence of conductance upon voltage and peptide bulk concentration for both regimes, in good agreement with those reported in the literature. Most importantly, the only two adjustable parameters involved in the kinetics of nucleation and growth of ion channels can be varied over broad ranges without affecting the above predictions to a significant extent. Thus, the fitting of experimental current-voltage curves stems naturally from the treatment and depends only slightly upon the choice of the kinetic parameters. Copyright © 2015 Elsevier B.V. All rights reserved.

Measuring Multi-Megavolt Diode Voltages

NASA Astrophysics Data System (ADS)

Pereira, N. R.; Swanekamp, S. B.; Weber, B. V.; Commisso, R. J.; Hinshelwood, D. D.; Stephanakis, S. J.

2002-12-01

The voltage in high-power diodes can be determined by measuring the Compton electrons generated by the diode's bremsstrahlung radiation. This technique is implemented with a Compton-Hall (C-H) voltmeter that collimates the bremsstrahlung onto a Compton target and bends the emitted Compton electron orbits off to the side with an applied magnetic field off to Si pin diode detectors. Voltage is determined from the ratio of the Compton electron dose to the forward x-ray dose. The instrument's calibration and response are determined from coupled electron/photon transport calculations. The applicable voltage range is tuned by adjusting the position of the electron detector relative to the Compton target or by varying the magnetic field strength. The instrument was used to obtain time-dependent voltage measurements for a pinched-beam diode whose voltage is enhanced by an upstream opening switch. In this case, plasmas and vacuum electron flow from the opening switch make it difficult to determine the voltage accurately from electrical measurements. The C-H voltmeter gives voltages that are significantly higher than those obtained from electrical measurements but are consistent with measurements of peak voltage based on nuclear activation of boron-nitride targets.

The effect of different oxygen exchange layers on TaO x based RRAM devices

NASA Astrophysics Data System (ADS)

Alamgir, Zahiruddin; Holt, Joshua; Beckmann, Karsten; Cady, Nathaniel C.

2018-01-01

In this work, we investigated the effect of the oxygen exchange layer (OEL) on the resistive switching properties of TaO x based memory cells. It was found that the forming voltage, SET-RESET voltage, R off, R on and retention properties are strongly correlated with the oxygen scavenging ability of the OEL, and the resulting oxygen vacancy formation ability of this layer. Higher forming voltage was observed for OELs having lower electronegativity/lower Gibbs free energy for oxide formation, and devices fabricated with these OELs exhibited an increased memory window, when using similar SET-RESET voltage range.

Islanding detection technique using wavelet energy in grid-connected PV system

NASA Astrophysics Data System (ADS)

Kim, Il Song

2016-08-01

This paper proposes a new islanding detection method using wavelet energy in a grid-connected photovoltaic system. The method detects spectral changes in the higher-frequency components of the point of common coupling voltage and obtains wavelet coefficients by multilevel wavelet analysis. The autocorrelation of the wavelet coefficients can clearly identify islanding detection, even in the variations of the grid voltage harmonics during normal operating conditions. The advantage of the proposed method is that it can detect islanding condition the conventional under voltage/over voltage/under frequency/over frequency methods fail to detect. The theoretical method to obtain wavelet energies is evolved and verified by the experimental result.

Switch wear leveling

DOEpatents

Wu, Hunter; Sealy, Kylee; Gilchrist, Aaron

2015-09-01

An apparatus for switch wear leveling includes a switching module that controls switching for two or more pairs of switches in a switching power converter. The switching module controls switches based on a duty cycle control technique and closes and opens each switch in a switching sequence. The pairs of switches connect to a positive and negative terminal of a DC voltage source. For a first switching sequence a first switch of a pair of switches has a higher switching power loss than a second switch of the pair of switches. The apparatus includes a switch rotation module that changes the switching sequence of the two or more pairs of switches from the first switching sequence to a second switching sequence. The second switch of a pair of switches has a higher switching power loss than the first switch of the pair of switches during the second switching sequence.

75 FR 63040 - Airworthiness Directives; McDonnell Douglas Corporation Model DC-10-10, DC-10-10F, DC-10-30, DC...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-10-14

... transients to the fuel quantity indication system, which could cause voltage levels to go beyond original..., which could cause voltage levels to go beyond original design levels between fuel tank probes and... this material at an NARA facility, call 202-741-6030, or go to http://www.archives.gov/federal_register...

High-temperature, gas-filled ceramic rectifiers, thyratrons, and voltage-reference tubes

NASA Technical Reports Server (NTRS)

Baum, E. A.

1969-01-01

Thyratron, capable of being operated as a rectifier and a voltage-reference tube, was constructed and tested for 1000 hours at temperatures to 800 degrees C. With current levels at 15 amps and peak voltages of 2000 volts and frequencies at 6000 cps, tube efficiency was greater than 97 percent.

Mechanisms of Gain Control by Voltage-Gated Channels in Intrinsically-Firing Neurons

PubMed Central

Patel, Ameera X.; Burdakov, Denis

2015-01-01

Gain modulation is a key feature of neural information processing, but underlying mechanisms remain unclear. In single neurons, gain can be measured as the slope of the current-frequency (input-output) relationship over any given range of inputs. While much work has focused on the control of basal firing rates and spike rate adaptation, gain control has been relatively unstudied. Of the limited studies on gain control, some have examined the roles of synaptic noise and passive somatic currents, but the roles of voltage-gated channels present ubiquitously in neurons have been less explored. Here, we systematically examined the relationship between gain and voltage-gated ion channels in a conductance-based, tonically-active, model neuron. Changes in expression (conductance density) of voltage-gated channels increased (Ca2+ channel), reduced (K+ channels), or produced little effect (h-type channel) on gain. We found that the gain-controlling ability of channels increased exponentially with the steepness of their activation within the dynamic voltage window (voltage range associated with firing). For depolarization-activated channels, this produced a greater channel current per action potential at higher firing rates. This allowed these channels to modulate gain by contributing to firing preferentially at states of higher excitation. A finer analysis of the current-voltage relationship during tonic firing identified narrow voltage windows at which the gain-modulating channels exerted their effects. As a proof of concept, we show that h-type channels can be tuned to modulate gain by changing the steepness of their activation within the dynamic voltage window. These results show how the impact of an ion channel on gain can be predicted from the relationship between channel kinetics and the membrane potential during firing. This is potentially relevant to understanding input-output scaling in a wide class of neurons found throughout the brain and other nervous systems. PMID:25816008

Office and Home Blood Pressures as Determinants of Electrocardiographic Left Ventricular Hypertrophy Among Black Nigerians Compared With White Flemish.

PubMed

Odili, Augustine N; Thijs, Lutgarde; Yang, Wen-Yi; Ogedengbe, John O; Nwegbu, Maxwell M; Jacobs, Lotte; Wei, Fang-Fei; Feng, Ying-Mei; Zhang, Zhen-Yu; Kuznetsova, Tatiana; Nawrot, Tim S; Staessen, Jan A

2017-11-01

The association of electrocardiographic left ventricular hypertrophy (ECG-LVH) with blood pressure (BP) in Blacks living in sub-Saharan Africa remains poorly documented. In 225 Black Nigerians and 729 White Flemish, we analyzed QRS voltages and voltage-duration products and 12 criteria diagnostic of ECG-LVH in relation to office BP (mean of 5 consecutive readings) and home BP (duplicate morning and evening readings averaged over 1 week). In multivariable analyses, QRS voltage and voltage-duration indexes were generally higher in Blacks than Whites. By using any of 12 criteria, ECG-LVH was more prevalent among Black than White men (54.4% vs. 36.0%) with no ethnic difference among women (17.1%). Precordial voltages and voltage-duration products increased with office and home systolic BP (SBP), and increases were up to 3-fold steeper in Blacks. In Blacks vs. Whites, increases in the Sokolow-Lyon voltage associated with a 10-mm Hg higher SBP were 0.18 mV (95% confidence interval [CI], 0.09-0.26) vs. 0.06 mV (0.02-0.09) and 0.17 mV (0.07-0.28) vs. 0.11 mV (CI, 0.07-0.15) for office and home BP, respectively, with a significant ethnic gradient (P < 0.05). The risk of ECG-LVH increased more with office and home BP in Blacks than Whites. Associations of ECG voltages and voltage-duration products and risk of ECG-LVH with BP are steeper in Black Nigerians compared with a White reference population. In resource-poor settings of sub-Saharan Africa, the ECG in combination with office and home BP is an essential instrument in risk stratification across the entire BP range. © The Author 2017. Published by Oxford University Press on behalf of the American Journal of Hypertension, Ltd.

An analog RF gap voltage regulation system for the Advanced Photon Source storage ring.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Horan, D.

1999-04-13

An analog rf gap voltage regulation system has been designed and built at Argonne National Laboratory to maintain constant total storage ring rf gap voltage, independent of beam loading and cavity tuning effects. The design uses feedback control of the klystron mod-anode voltage to vary the amount of rf power fed to the storage ring cavities. The system consists of two independent feedback loops, each regulating the combined rf gap voltages of eight storage ring cavities by varying the output power of either one or two rf stations, depending on the mode of operation. It provides full operator control andmore » permissive logic to permit feedback control of the rf system output power only if proper conditions are met. The feedback system uses envelope-detected cavity field probe outputs as the feedback signal. Two different methods of combining the individual field probe signals were used to generate a relative DC level representing one-half of the total storage ring rf voltage, an envelope-detected vector sum of the field probe rf signals, and the DC sum of individual field probe envelope detector outputs. The merits of both methods are discussed. The klystron high-voltage power supply (HVPS) units are fitted with an analog interface for external control of the mod-anode voltage level, using a four-quadrant analog multiplier to modulate the HVPS mod-anode voltage regulator set-point in response to feedback system commands.« less

Serial Charging Test on High Capacity Li-Ion Cells for the Orbiter Advanced Hydraulic Power System

NASA Technical Reports Server (NTRS)

Jeevarajan, Judith A.; Irlbeck, Brad

2006-01-01

Although it looks like module level voltage drives the cutoff for charge, the actual cutoff is due to unbalanced cell voltages that drive the module voltage up. Individual cell voltage drives the cutoff for discharge Low resistance cells are the first to reach the low-voltage cutoff Cell-to-Cell voltage differences are generally small and show similar trends for each cycle Increase for a distinct window during charge and at the end of discharge Increase in max to min cell voltage difference with time/cycles Decrease in max to min cell voltage difference during high current pulses with time/cycles Individual cell voltage trends (with respect to other cells) are very repeatable from cycle to cycle, although voltage slowly degrades with time/cycles (resistance growth) Much more difference observed near end of discharge Little change in order of cell voltage (cell with highest voltage to cell with lowest voltage) Temp sensor on the side of cell (between 2 cells) shows much greater rise during discharge than for single cell tests (18 C vs 5 C) Conclusion: Serial Charging of this string of cells is feasible as it has only a minor impact on useful capacity

A DC Transformer

NASA Technical Reports Server (NTRS)

Youngquist, Robert C.; Ihlefeld, Curtis M.; Starr, Stanley O.

2013-01-01

A component level dc transformer is described in which no alternating currents or voltages are present. It operates by combining features of a homopolar motor and a homopolar generator, both de devices, such that the output voltage of a de power supply can be stepped up (or down) with a corresponding step down (or up) in current. The basic theory for this device is developed, performance predictions are made, and the results from a small prototype are presented. Based on demonstrated technology in the literature, this de transformer should be scalable to low megawatt levels, but it is more suited to high current than high voltage applications. Significant development would be required before it could achieve the kilovolt levels needed for de power transmission.

Application of the electroosmotic effect for thrust generation

NASA Astrophysics Data System (ADS)

Hansen, Thomas Edward

The present work focuses on demonstrating the capabilities of electroosmotic pumps, (EOP) to generate thrust. An underwater glider was successfully propelled by electroosmosis for the first time published - at 0.85 inches per second. Asymmetric AC voltage pulsing proved to produce higher flow rates then equivalent DC pumps for the same average voltage. Ultra-short pulsing proved 100 nanosecond rise times in EOP are possible, which surpassed published predictions by three orders of magnitude. Theories behind efficiency losses of high power EOP were investigated. Direct measurement of effective voltage at the face of a membrane is the most accurate way to determine voltage drop across the electrolyte of an EOP. Forced convection lowered efficiency of the EOP for low voltages by preventing capacitance charging, but proved to prolong pump life during high power application.

Electrolyte for high voltage Li/LiMn 1.9Co 0.1O 4 cells

NASA Astrophysics Data System (ADS)

Hayashi, Katsuya; Nemoto, Yasue; Tobishima, Shin-ichi; Yamaki, Jun-ichi

An electrolyte for high voltage lithium metal anode cells must simultaneously satisfy at least the following requirements; (i) high cycling efficiency on the lithium metal anode; (ii) higher oxidation potential than the charging voltage, and (iii) high specific conductivity. We have examined various electrolytes for lithium metal anode cells using a high voltage cathode, LiMn 1.9Co 0.1O 4. Of the electrolytes resistant to high voltage that we used, a system containing 60 to 90 vol.% of dimethyl carbonate (DMC) mixed with ethylene carbonate (EC) and 1.0 M lithium hexafluorophosphate (LiPF 6) provided the best cycling efficiency on a lithium metal anode, as well as a high specific conductivity around 10 mS cm -1 at 20 °C.

A prepositioned areal electrofishing apparatus for sampling stream habitats

USGS Publications Warehouse

Fisher, William L.; Brown, Marshall E.

1993-01-01

We describe the design, use, and sampling characteristics ofan electrofishing apparatus used to sample fish in stream habitats. The apparatus uses two prepositioned areal electrofishing devices (PAED) of different designs, a bottom parallel electrode PAED and a suspended dropper electrode PAED. To determine the effective immobilization ranges of the PAEDs, we evaluated intensities and shapes of the PAEDs' electrical fields, and the electroshock responses of fish in cages in concrete tanks and in four streams in Alabama with different water conductivities. Electroshock responses indicated that complete immobilization occurred at voltage gradients of 1.0 V/cm or higher (voltage drop, 400 V AC), as far as 35 cm from the PAED electrodes, although some fish were immobilized up to 65 cm away at 0.3 V/cm. We estimated the immobilization (stun) power density threshold to be about 10 μW/cm3. Stream evaluations of the PAEDs revealed that higher voltages were needed to immobilize fish at lower (35 μS/cm) and higher (120 and 125 μS/cm) water conductivities, whereas lower voltages were required at an intermediate conductivity (60 μS/cm). These results conformed with the predictions of power transfer theory and underscored the need to calibrate PAEDs to stream conductivities to standardize the effective sampling range.

Acanthamoeba migration in an electric field.

PubMed

Rudell, Jolene Chang; Gao, Jing; Sun, Yuxin; Sun, Yaohui; Chodosh, James; Schwab, Ivan; Zhao, Min

2013-06-21

We investigated the in vitro response of Acanthamoeba trophozoites to electric fields (EFs). Acanthamoeba castellanii were exposed to varying strengths of an EF. During EF exposure, cell migration was monitored using an inverted microscope equipped with a CCD camera and the SimplePCI 5.3 imaging system to capture time-lapse images. The migration of A. castellanii trophozoites was analyzed and quantified with ImageJ software. For analysis of cell migration in a three-dimensional culture system, Acanthamoeba trophozoites were cultured in agar, exposed to an EF, digitally video recorded, and analyzed at various Z focal planes. Acanthamoeba trophozoites move at random in the absence of an EF, but move directionally in response to an EF. Directedness in the absence of an EF is 0.08 ± 0.01, while in 1200 mV/mm EF, directedness is significantly higher at -0.65 ± 0.01 (P < 0.001). We find that the trophozoite migration response is voltage-dependent, with higher directionality with higher voltage application. Acanthamoeba move directionally in a three-dimensional (3D) agar system as well when exposed to an EF. Acanthamoeba trophozoites move directionally in response to an EF in a two-dimensional and 3D culture system. Acanthamoeba trophozoite migration is also voltage-dependent, with increased directionality with increasing voltage. This may provide new treatment modalities for Acanthamoeba keratitis.

Power management and control for space systems

NASA Technical Reports Server (NTRS)

Finke, R. C.; Myers, I. T.; Terdan, F. F.; Stevens, N. J.

1978-01-01

Power management and control technology for the large, high-power spacecraft of the 1980's is discussed. Systems weight optimization that indicate a need for higher bus voltages are shown. Environmental interactions that are practical limits for the maximum potential on exposed surfaces are shown. A dual-voltage system is proposed that would provide the weight savings of a high-voltage distribution system and take into account the potential environmental interactions. The technology development of new components and circuits is also discussed.

Up-and-down chopper circuit

DOEpatents

Goffeau, Jacques R.

1979-01-01

An improved Up-and-Down Chopper Circuit is provided which is useful for voltage regulation in a bi-directional DC power system. In the down mode, power is switched from a DC power source to a lower voltage energy storing load while in the up mode stored energy in the load is transferred to the higher voltage source. The system uses Darlington transistor switches in a conventional connection. The improvement relates to circuit additions to eliminate the effects of inter-electrode capacitance inherent with this Darlington transistor switching arrangement.

Gender-Adjustment and Cutoff Values of Cornell Product in Hypertensive Japanese Patients.

PubMed

Ishikawa, Joji; Yamanaka, Yuko; Toba, Ayumi; Watanabe, Shintaro; Harada, Kazumasa

2017-12-12

In the Japanese population, the electrocardiographic (ECG) Cornell voltage and product predict cardiovascular events at lower values (Cornell voltage of 2.04 mV in males and 1.71 mV in females, and Cornell product of 158.7 mV× msec) than in the guidelines (2.8 mV, 2.0 mV, and 244 mV× msec, respectively). We evaluated the ECG criteria for left ventricular hypertrophy (LVH) corresponding to echocardiographic LVH (Echo-LVH) in Japanese patients.We reviewed data on 345 consecutive hypertensive patients who underwent echocardiography, and evaluated the Cornell voltage (S in leads V3 + R in leads aVL), Cornell product [ (Cornell voltage + 0.6 mV for females) × QRS duration], and left ventricular mass index (LVMI) (Echo-LVH: LVMI ≥ 116 g/m 2 in males and ≥ 96 g/m 2 in females).The mean age was 63.8 ± 12.5 years (174 males/172 females). Echo-LVH was found in 22.7% of males and 37.2% of females. The equations for estimating LVMI from the Cornell voltage were (1) LVMI = 14.5 × Cornell voltage + 78.9 for males and (2) LVMI = 21.5 × Cornell voltage + 61.5 for females. The Cornell voltage corresponding to Echo-LVH was 2.6 mV in males and 1.6 mV in females, which were below the guideline levels and close to the values indicating cardiovascular risk. The equation for estimating LVMI from the Cornell product was LVMI = 0.15 × Cornell product + 68.8. The Cornell product corresponding to Echo-LVH was 170 mV× msec (sensitivity: 0.730, specificity: 0.601), which was also close to the cardiovascular risk level.Cornell voltage and product values indicating Echo-LVH are lower than those in the current guidelines and closer to the cardiovascular risk levels.

Systems and methods for initializing a charging system

DOEpatents

Ransom, Ray M.; Perisic, Milun; Kajouke, Lateef A.

2014-09-09

Systems and methods are provided for initiating a charging system. The method, for example, may include, but is not limited to, providing, by the charging system, an incrementally increasing voltage to a battery up to a first predetermined threshold while the energy conversion module has a zero-percent duty cycle, providing, by the charging system, an incrementally increasing voltage to the battery from an initial voltage level of the battery up to a peak voltage of a voltage source while the energy conversion module has a zero-percent duty cycle, and providing, by the charging system, an incrementally increasing voltage to the battery by incrementally increasing the duty cycle of the energy conversion module.

On the Path to SunShot - Emerging Issues and Challenges with Integrating High Levels of Solar into the Distribution System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palminitier, Bryan; Broderick, Robert; Mather, Barry

2016-05-01

Wide use of advanced inverters could double the electricity-distribution system’s hosting capacity for distributed PV at low costs—from about 170 GW to 350 GW (see Palmintier et al. 2016). At the distribution system level, increased variable generation due to high penetrations of distributed PV (typically rooftop and smaller ground-mounted systems) could challenge the management of distribution voltage, potentially increase wear and tear on electromechanical utility equipment, and complicate the configuration of circuit-breakers and other protection systems—all of which could increase costs, limit further PV deployment, or both. However, improved analysis of distribution system hosting capacity—the amount of distributed PV thatmore » can be interconnected without changing the existing infrastructure or prematurely wearing out equipment—has overturned previous rule-of-thumb assumptions such as the idea that distributed PV penetrations higher than 15% require detailed impact studies. For example, new analysis suggests that the hosting capacity for distributed PV could rise from approximately 170 GW using traditional inverters to about 350 GW with the use of advanced inverters for voltage management, and it could be even higher using accessible and low-cost strategies such as careful siting of PV systems within a distribution feeder and additional minor changes in distribution operations. Also critical to facilitating distributed PV deployment is the improvement of interconnection processes, associated standards and codes, and compensation mechanisms so they embrace PV’s contributions to system-wide operations. Ultimately SunShot-level PV deployment will require unprecedented coordination of the historically separate distribution and transmission systems along with incorporation of energy storage and “virtual storage,” which exploits improved management of electric vehicle charging, building energy systems, and other large loads. Additional analysis and innovation are neede« less

Are classic predictors of voltage valid in cardiac amyloidosis? A contemporary analysis of electrocardiographic findings.

PubMed

Sperry, Brett W; Vranian, Michael N; Hachamovitch, Rory; Joshi, Hariom; McCarthy, Meghann; Ikram, Asad; Hanna, Mazen

2016-07-01

Low voltage electrocardiography (ECG) coupled with increased ventricular wall thickness is the hallmark of cardiac amyloidosis. However, patient characteristics influencing voltage in the general population, including bundle branch block, have not been evaluated in amyloid heart disease. A retrospective analysis was performed of patients with newly diagnosed cardiac amyloidosis from 2002 to 2014. ECG voltage was calculated using limb (sum of QRS complex in leads I, II and III) and precordial (Sokolow: S in V1 plus R in V5-V6) criteria. The associations between voltage and clinical variables were tested using multivariable linear regression. A Cox model assessed the association of voltage with mortality. In 389 subjects (transthyretin ATTR 186, light chain AL 203), 30% had conduction delay (QRS >120ms). In those with narrow QRS, 68% met low limb, 72% low Sokolow and 57% both criteria, with lower voltages found in AL vs ATTR. LV mass index as well as other typical factors that impact voltage (age, sex, race, hypertension, BSA, and smoking) in the general population were not associated with voltage in this cardiac amyloidosis cohort. Patients with LBBB and IVCD had similar voltages when compared to those with narrow QRS. Voltage was significantly associated with mortality (p<0.001 for both criteria) after multivariable adjustment. Classic predictors of ECG voltage in the general population are not valid in cardiac amyloidosis. In this cohort, the prevalence estimates of ventricular conduction delay and low voltage are higher than previously reported. Voltage predicts mortality after multivariable adjustment. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

Comparison of gene expression levels of appA, ppsR, and EL368 in Erythrobacter litoralis spheroplasts under aerobic and anaerobic conditions, and under blue light, red light, and dark conditions.

PubMed

Nishino, Koki; Takahashi, Sawako; Nishida, Hiromi

2018-03-31

We compared the gene expression levels of the blue-light-responsive genes, appA (encoding photosynthesis promoting protein AppA), ppsR (encoding photosynthesis suppressing protein PpsR), and EL368 (encoding a blue-light-activated histidine kinase with a light, oxygen, or voltage domain) between aerobic and anaerobic conditions in spheroplasts of the aerobic photosynthetic bacterium Erythrobacter litoralis. The spheroplasts conducted photosynthesis under red light but not under blue light. All three blue-light-responsive genes showed higher expression under aerobic conditions than under anaerobic conditions under blue light. In contrast, under red light, although the expression level of appA was higher in the presence of oxygen than in the absence of oxygen, the expression levels of ppsR and EL368 were similar in the presence and absence of oxygen. Our findings demonstrate that the expression of blue-light-responsive genes is strongly affected by oxygen in E. litoralis spheroplasts.

Effect of Reduced Tube Voltage on Diagnostic Accuracy of CT Colonography.

PubMed

Futamata, Yoshihiro; Koide, Tomoaki; Ihara, Riku

2017-01-01

The normal tube voltage in computed tomography colonography (CTC) is 120 kV. Some reports indicate that the use of a low tube voltage (lower than 120 kV) technique plays a significant role in reduction of radiation dose. However, to determine whether a lower tube voltage can reduce radiation dose without compromising diagnostic accuracy, an evaluation of images that are obtained while maintaining the volume CT dose index (CTDI vol ) is required. This study investigated the effect of reduced tube voltage in CTC, without modifying radiation dose (i.e. constant CTDI vol ), on image quality. Evaluation of image quality involved the shape of the noise power spectrum, surface profiling with volume rendering (VR), and receiver operating characteristic (ROC) analysis. The shape of the noise power spectrum obtained with a tube voltage of 80 kV and 100 kV was not similar to the one produced with a tube voltage of 120 kV. Moreover, a higher standard deviation was observed on volume-rendered images that were generated using the reduced tube voltages. In addition, ROC analysis revealed a statistically significant drop in diagnostic accuracy with reduced tube voltage, revealing that the modification of tube voltage affects volume-rendered images. The results of this study suggest that reduction of tube voltage in CTC, so as to reduce radiation dose, affects image quality and diagnostic accuracy.

Biophysical characterization of the fluorescent protein voltage probe VSFP2.3 based on the voltage-sensing domain of Ci-VSP.

PubMed

Lundby, Alicia; Akemann, Walther; Knöpfel, Thomas

2010-11-01

A voltage sensitive phosphatase was discovered in the ascidian Ciona intestinalis. The phosphatase, Ci-VSP, contains a voltage-sensing domain homologous to those known from voltage-gated ion channels, but unlike ion channels, the voltage-sensing domain of Ci-VSP can reside in the cell membrane as a monomer. We fused the voltage-sensing domain of Ci-VSP to a pair of fluorescent reporter proteins to generate a genetically encodable voltage-sensing fluorescent probe, VSFP2.3. VSFP2.3 is a fluorescent voltage probe that reports changes in membrane potential as a FRET (fluorescence resonance energy transfer) signal. Here we report sensing current measurements from VSFP2.3, and show that VSFP2.3 carries 1.2 e sensing charges, which are displaced within 1.5 ms. The sensing currents become faster at higher temperatures, and the voltage dependence of the decay time constants is temperature dependent. Neutralization of an arginine in S4, previously suggested to be a sensing charge, and measuring associated sensing currents indicate that this charge is likely to reside at the membrane-aqueous interface rather than within the membrane electric field. The data presented give us insights into the voltage-sensing mechanism of Ci-VSP, which will allow us to further improve the sensitivity and kinetics of the family of VSFP proteins.

Control of Grid Connected Photovoltaic System Using Three-Level T-Type Inverter

NASA Astrophysics Data System (ADS)

Zorig, Abdelmalik; Belkeiri, Mohammed; Barkat, Said; Rabhi, Abdelhamid

2016-08-01

Three-level T-Type inverter (3LT2I) topology has numerous advantageous compared to three-level neutral-point-clamped (NPC) inverter. The main benefits of 3LT2I inverter are the efficiency, inverter cost, switching losses, and the quality of output voltage waveforms. In this paper, a photovoltaic distributed generation system based on dual-stage topology of DC-DC boost converter and 3LT2I is introduced. To that end, a decoupling control strategy of 3LT2I is proposed to control the current injected into the grid, reactive power compensation, and DC-link voltage. The resulting system is able to extract the maximum power from photovoltaic generator, to achieve sinusoidal grid currents, and to ensure reactive power compensation. The voltage-balancing control of two split DC capacitors of the 3LT2I is achieved using three-level space vector modulation with balancing strategy based on the effective use of the redundant switching states of the inverter voltage vectors. The proposed system performance is investigated at different operating conditions.

Design and Comparison of Cascaded H-Bridge, Modular Multilevel Converter, and 5-L Active Neutral Point Clamped Topologies for Motor Drive Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marzoughi, Alinaghi; Burgos, Rolando; Boroyevich, Dushan

This paper presents the design procedure and comparison of converters currently used in medium-voltage high-power motor drive applications. For this purpose, the cascaded H-bridge (CHB), modular multilevel converter (MMC), and five-level active neutral point clamped (5-L ANPC) topologies are targeted. The design is performed using 1.7-kV insulated gate bipolar transistors (IGBTs) for CHB and MMC converters, and utilizing 3.3- and 4.5-kV IGBTs for 5-L ANPC topology as normally done in industry. The comparison is done between the designed converter topologies at three different voltage levels (4.16, 6.9, and 13.8 kV, with only the first two voltage levels in case ofmore » the 5-L ANPC) and two different power levels (3 and 5 MVA), in order to elucidate the dependence of different parameters on voltage and power rating. Finally, the comparison is done from several points of view such as efficiency, capacitive energy storage, semiconductor utilization, parts count (for measure of reliability), and power density.« less

Experiments of a 100 kV-level pulse generator based on metal-oxide varistor

NASA Astrophysics Data System (ADS)

Cui, Yan-cheng; Wu, Qi-lin; Yang, Han-wu; Gao, Jing-ming; Li, Song; Shi, Cheng-yu

2018-03-01

This paper introduces the development and experiments of a 100 kV-level pulse generator based on a metal-oxide varistor (MOV). MOV has a high energy handling capacity and nonlinear voltage-current (V-I) characteristics, which makes it useful for high voltage pulse shaping. Circuit simulations based on the measured voltage-current characteristics of MOV verified the shaping concept and showed that a circuit containing a two-section pulse forming network (PFN) will result in better defined square pulse than a simple L-C discharging circuit. A reduced-scale experiment was carried out and the result agreed well with simulation prediction. Then a 100 kV-level pulse generator with multiple MOVs in a stack and a two-section pulse forming network (PFN) was experimented. A pulse with a voltage amplitude of 90 kV, rise time of about 50 ns, pulse width of 500 ns, and flat top of about 400 ns was obtained with a water dummy load of 50 Ω. The results reveal that the combination of PFN and MOV is a practical way to generate high voltage pulses with better flat top waveforms, and the load voltage is stable even if the load's impedance varies. Such pulse generator can be applied in many fields such as surface treatment, corona plasma generation, industrial dedusting, and medical disinfection.

Exposure to Electrical Contact Currents and the Risk of Childhood Leukemia

PubMed Central

Does, Monique; Scélo, Ghislaine; Metayer, Catherine; Selvin, Steve; Kavet, Robert; Buffler, Patricia

2011-01-01

The objectives of this study were to examine the association between contact current exposure and the risk of childhood leukemia and to investigate the relationship between residential contact currents and magnetic fields. Indoor and outdoor contact voltage and magnetic-field measurements were collected for the diagnosis residence of 245 cases and 269 controls recruited in the Northern California Childhood Leukemia Study (2000–2007). Logistic regression techniques produced odds ratios (OR) adjusted for age, sex, Hispanic ethnicity, mother’s race and household income. No statistically significant associations were seen between childhood leukemia and indoor contact voltage level [exposure ≥90th percentile (10.5 mV): OR = 0.83, 95% confidence interval (CI): 0.45, 1.54], outdoor contact voltage level [exposure ≥90th percentile (291.2 mV): OR = 0.89, 95% CI: 0.48, 1.63], or indoor magnetic-field levels (>0.20 μT: OR = 0.76, 95% CI: 0.30, 1.93). Contact voltage was weakly correlated with magnetic field; correlation coefficients were r = 0.10 (P = 0.02) for indoor contact voltage and r = 0.15 (P = 0.001) for outdoor contact voltage. In conclusion, in this California population, there was no evidence of an association between childhood leukemia and exposure to contact currents or magnetic fields and a weak correlation between measures of contact current and magnetic fields. PMID:21388283

Performance of a low-power subsonic-arc-attachment arcjet thruster

NASA Technical Reports Server (NTRS)

Sankovic, John M.; Berns, Darren H.

1993-01-01

A subsonic-arc-attachment thruster design was scaled from a 30 kW 1960's vintage thruster to operate at nominally 3 kW. Performance measurements were obtained over a 1-4 kW power range using hydrogen as the propellant. Several modes of operation were identified and were characterized by varying degrees of voltage instability. A stability map was developed showing that the voltage oscillations were brought upon by elevated current or propellant levels. At a given specific energy level the specific impulse increased asymptotically with increased flow rates. Comparisons of performance were made between radial and tangential propellant injection. When the vortex flow was eliminated using radial injection, the operating voltages were lower at a given current, and the specific impulse and efficiency decreased. Tests were also conducted to determine the effects of background pressure on operation, and performance data were obtained at pressures of 0.047 Pa and 18 Pa. For a given specific energy level, the performance increased with a decrease in facility background pressure. Lowering the background pressure also caused a dramatic change in the voltage-current characteristic and the voltage stability, a phenomenon not previously reported with conventional supersonic-arc-attachment thrusters.

Magnetically switched power supply system for lasers

NASA Technical Reports Server (NTRS)

Pacala, Thomas J. (Inventor)

1987-01-01

A laser power supply system is described in which separate pulses are utilized to avalanche ionize the gas within the laser and then produce a sustained discharge to cause the gas to emit light energy. A pulsed voltage source is used to charge a storage device such as a distributed capacitance. A transmission line or other suitable electrical conductor connects the storage device to the laser. A saturable inductor switch is coupled in the transmission line for containing the energy within the storage device until the voltage level across the storage device reaches a predetermined level, which level is less than that required to avalanche ionize the gas. An avalanche ionization pulse generating circuit is coupled to the laser for generating a high voltage pulse of sufficient amplitude to avalanche ionize the laser gas. Once the laser gas is avalanche ionized, the energy within the storage device is discharged through the saturable inductor switch into the laser to provide the sustained discharge. The avalanche ionization generating circuit may include a separate voltage source which is connected across the laser or may be in the form of a voltage multiplier circuit connected between the storage device and the laser.

Double-injection, deep-impurity switch development

NASA Technical Reports Server (NTRS)

Selim, F. A.; Whitson, D. W.

1983-01-01

The overall objective of this program is the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI)(2) silicon switch that operates in the 1-10 kV range with conduction current of 10 and 1A, respectively. Other major specifications include a holding voltage of 0 to 5 volts at 1 A anode current, 10 microsecond switching time, and power dissipation of 50 W at 75 C. This report describes work that shows how the results obtained at the University of Cincinnati under NASA Grant NSG-3022 have been applied to larger area and higher voltage devices. The investigations include theoretical, analytical, and experimental studies of device design and processing. Methods to introduce deep levels, such as Au diffusion and electron irradiation, have been carried out to "pin down' the Fermi level and control device-switching characteristics. Different anode, cathode, and gate configurations are presented. Techniques to control the surface electric field of planar structures used for (DI)(2) switches are examined. Various sections of this report describe the device design, wafer-processing techniques, and various measurements which include ac and dc characteristics, 4-point probe, and spreading resistance.

Crystalline orientation dependent photoresponse and heterogeneous behaviors of grain boundaries in perovskite solar cells

NASA Astrophysics Data System (ADS)

Jiang, Chuanpeng; Zhang, Pengpeng

2018-02-01

Using photoconductive atomic force microscopy and Kelvin probe force microscopy, we characterize the local electrical properties of grains and grain boundaries of organic-inorganic hybrid perovskite (CH3NH3PbI3) thin films on top of a poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate (PEDOT:PSS)/ITO substrate. Three discrete photoconductivity levels are identified among perovskite grains, likely corresponding to the crystal orientation of each grain. Local J-V curves recorded on these grains further suggest an anti-correlation behavior between the short circuit current (JSC) and open circuit voltage (VOC). This phenomenon can be attributed to diffusion-limited surface recombination at the non-selective perovskite-tip contact, where a higher carrier mobility established in the perovskite grain results in an enhanced surface recombination and thus a lower VOC. In addition, the photoresponse of perovskite films displays a pronounced heterogeneity across the grain boundaries, with the boundaries formed between grains of the same photoconductivity level displaying even enhanced photocurrent and open circuit voltage compared to those of the adjacent grain interiors. These observations highlight the significance of controlling the microstructure of perovskite thin films, which will be a necessary route for further improving the efficiency of perovskite solar cells.

Defect States in InP/InGaAs/InP Heterostructures by Current-Voltage Characteristics and Deep Level Transient Spectroscopy.

PubMed

Vu, Thi Kim Oanh; Lee, Kyoung Su; Lee, Sang Jun; Kim, Eun Kyu

2018-09-01

We studied defect states in In0.53Ga0.47As/InP heterojunctions with interface control by group V atoms during metalorganic chemical vapor (MOCVD) deposition. From deep level transient spectroscopy (DLTS) measurements, two defects with activation energies of 0.28 eV (E1) and 0.15 eV (E2) below the conduction band edge, were observed. The defect density of E1 for In0.53Ga0.47As/InP heterojunctions with an addition of As and P atoms was about 1.5 times higher than that of the heterojunction added P atom only. From the temperature dependence of current- voltage characteristics, the thermal activation energies of In0.53Ga0.47As/InP of heterojunctions were estimated to be 0.27 and 0.25 eV, respectively. It appeared that the reverse light current for In0.53Ga0.47As/InP heterojunction added P atom increased only by illumination of a 940 nm-LED light source. These results imply that only the P addition at the interface can enhance the quality of InGaAs/InP heterojunction.

Open-circuit voltage improvements in low-resistivity solar cells

NASA Technical Reports Server (NTRS)

Godlewski, M. P.; Klucher, T. M.; Mazaris, G. A.; Weizer, V. G.

1979-01-01

Mechanisms limiting the open-circuit voltage in 0.1 ohm-cm solar cells were investigated. It was found that a rather complicated multistep diffusion process could produce cells with significantly improved voltages. The voltage capabilities of various laboratory cells were compared independent of their absorption and collection efficiencies. This was accomplished by comparing the cells on the basis of their saturation currents or, equivalently, comparing their voltage outputs at a constant current-density level. The results show that for both the Lewis diffused emitter cell and the Spire ion-implanted emitter cell the base component of the saturation current is voltage controlling. The evidence for the University of Florida cells, although not very conclusive, suggests emitter control of the voltage in this device. The data suggest further that the critical voltage-limiting parameter for the Lewis cell is the electron mobility in the cell base.

Temporal Dynamics of Microbial Rhodopsin Fluorescence Reports Absolute Membrane Voltage

PubMed Central

Hou, Jennifer H.; Venkatachalam, Veena; Cohen, Adam E.

2014-01-01

Plasma membrane voltage is a fundamentally important property of a living cell; its value is tightly coupled to membrane transport, the dynamics of transmembrane proteins, and to intercellular communication. Accurate measurement of the membrane voltage could elucidate subtle changes in cellular physiology, but existing genetically encoded fluorescent voltage reporters are better at reporting relative changes than absolute numbers. We developed an Archaerhodopsin-based fluorescent voltage sensor whose time-domain response to a stepwise change in illumination encodes the absolute membrane voltage. We validated this sensor in human embryonic kidney cells. Measurements were robust to variation in imaging parameters and in gene expression levels, and reported voltage with an absolute accuracy of 10 mV. With further improvements in membrane trafficking and signal amplitude, time-domain encoding of absolute voltage could be applied to investigate many important and previously intractable bioelectric phenomena. PMID:24507604

Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism.

PubMed

Chakrabarti, Somsubhra; Ginnaram, Sreekanth; Jana, Surajit; Wu, Zong-Yi; Singh, Kanishk; Roy, Anisha; Kumar, Pankaj; Maikap, Siddheswar; Qiu, Jian-Tai; Cheng, Hsin-Ming; Tsai, Ling-Na; Chang, Ya-Ling; Mahapatra, Rajat; Yang, Jer-Ren

2017-07-05

Negative voltage modulated multi-level resistive switching with quantum conductance during staircase-type RESET and its transport characteristics in Cr/BaTiO x /TiN structure have been investigated for the first time. The as-deposited amorphous BaTiO x film has been confirmed by high-resolution transmission electron microscopy. X-ray photo-electron spectroscopy shows different oxidation states of Ba in the switching material, which is responsible for tunable more than 10 resistance states by varying negative stop voltage owing to slow decay value of RESET slope (217.39 mV/decade). Quantum conductance phenomenon has been observed in staircase RESET cycle of the memory devices. By inspecting the oxidation states of Ba + and Ba 2+ through measuring H 2 O 2 with a low concentration of 1 nM in electrolyte/BaTiO x /SiO 2 /p-Si structure, the switching mechanism of each HRS level as well as the multi-level phenomenon has been explained by gradual dissolution of oxygen vacancy filament. Along with negative stop voltage modulated multi-level, current compliance dependent multi-level has also been demonstrated and resistance ratio up to 2000 has been achieved even for a thin (<5 nm) switching material. By considering oxidation-reduction of the conducting filaments, the current-voltage switching curve has been simulated as well. Hence, multi-level resistive switching of Cr/BaTiO x /TiN structure implies the promising applications in high dense, multistate non-volatile memories in near future.

Silicon Carbide Emitter Turn-Off Thyristor

DOE PAGES

Wang, Jun; Wang, Gangyao; Li, Jun; ...

2008-01-01

A novel MOS-conmore » trolled SiC thyristor device, the SiC emitter turn-off thyristor (ETO) is a promising technology for future high-voltage switching applications because it integrates the excellent current conduction capability of a SiC thyristor with a simple MOS-control interface. Through unity-gain turn-off, the SiC ETO also achieves excellent Safe Operation Area (SOA) and faster switching speeds than silicon ETOs. The world's first 4.5-kV SiC ETO prototype shows a forward voltage drop of 4.26 V at 26.5  A / cm 2 current density at room and elevated temperatures. Tested in an inductive circuit with a 2.5 kV DC link voltage and a 9.56-A load current, the SiC ETO shows a fast turn-off time of 1.63 microseconds and a low 9.88 mJ turn-off energy. The low switching loss indicates that the SiC ETO could operate at about 4 kHz if 100  W / cm 2 conduction and the 100  W / cm 2 turn-off losses can be removed by the thermal management system. This frequency capability is about 4 times higher than 4.5-kV-class silicon power devices. The preliminary demonstration shows that the SiC ETO is a promising candidate for high-frequency, high-voltage power conversion applications, and additional developments to optimize the device for higher voltage (>5 kV) and higher frequency (10 kHz) are needed.« less

Auditory Brainstem Response Altered in Humans With Noise Exposure Despite Normal Outer Hair Cell Function

PubMed Central

Bramhall, Naomi F.; Konrad-Martin, Dawn; McMillan, Garnett P.; Griest, Susan E.

2017-01-01

Objectives Recent animal studies demonstrated that cochlear synaptopathy, a partial loss of inner hair cell-auditory nerve fiber synapses, can occur in response to noise exposure without any permanent auditory threshold shift. In animal models, this synaptopathy is associated with a reduction in the amplitude of wave I of the auditory brainstem response (ABR). The goal of this study was to determine whether higher lifetime noise exposure histories in young people with clinically normal pure-tone thresholds are associated with lower ABR wave I amplitudes. Design Twenty-nine young military Veterans and 35 non Veterans (19 to 35 years of age) with normal pure-tone thresholds were assigned to 1 of 4 groups based on their self-reported lifetime noise exposure history and Veteran status. Suprathreshold ABR measurements in response to alternating polarity tone bursts were obtained at 1, 3, 4, and 6 kHz with gold foil tiptrode electrodes placed in the ear canal. Wave I amplitude was calculated from the difference in voltage at the positive peak and the voltage at the following negative trough. Distortion product otoacoustic emission input/output functions were collected in each participant at the same four frequencies to assess outer hair cell function. Results After controlling for individual differences in sex and distortion product otoacoustic emission amplitude, the groups containing participants with higher reported histories of noise exposure had smaller ABR wave I amplitudes at suprathreshold levels across all four frequencies compared with the groups with less history of noise exposure. Conclusions Suprathreshold ABR wave I amplitudes were reduced in Veterans reporting high levels of military noise exposure and in non Veterans reporting any history of firearm use as compared with Veterans and non Veterans with lower levels of reported noise exposure history. The reduction in ABR wave I amplitude in the groups with higher levels of noise exposure cannot be accounted for by sex or variability in outer hair cell function. This change is similar to the decreased ABR wave I amplitudes observed in animal models of noise-induced cochlear synaptopathy. However, without post mortem examination of the temporal bone, no direct conclusions can be drawn concerning the presence of synaptopathy in the study groups with higher noise exposure histories. PMID:27992391

Influence of key processing parameters and seeding density effects of microencapsulated chondrocytes fabricated using electrohydrodynamic spraying.

PubMed

Gansau, Jennifer; Kelly, Lara; Buckley, Conor

2018-06-11

Cell delivery and leakage during injection remains a challenge for cell-based intervertebral disc regeneration strategies. Cellular microencapsulation may offer a promising approach to overcome these limitations by providing a protective niche during intradiscal injection. Electrohydrodynamic spraying (EHDS) is a versatile one-step approach for microencapsulation of cells using a high voltage electric field. The primary objective of this work was to characterise key processing parameters such as applied voltage (0, 5, 10 or 15kV), emitter needle gauge (21, 26 or 30G), alginate concentration (1, 2 or 3%) and flow rate (50, 100, 250 or 500 µl/min) to regulate the morphology of alginate microcapsules and subsequent cell viability when altering these parameters. The effect of initial cell seeding density (5, 10 and 20x10⁶ cells/ml) on subsequent matrix accumulation of microencapsulated articular chondrocytes was also evaluated. Results showed that increasing alginate concentration and thus viscosity increased overall microcapsule size but also affected the geometry towards ellipsoidal-shaped gels. Altering the electric field strength and needle diameter regulated microcapsule size towards a smaller diameter with increasing voltage and smaller needle diameter. Needle size did not appear to affect cell viability when operating with lower alginate concentrations (1% and 2%), although higher concentrations (3%) and thus higher viscosity hydrogels resulted in diminished viability with decreasing needle diameter. Increasing cell density resulted in decreased cell viability and a concomitant decrease in DNA content, perhaps due to competing nutrient demands as a result of more closely packed cells. However, higher cell densities resulted in increased levels of extracellular matrix accumulated. Overall, this work highlights the potential of EHDS as a controllable and versatile approach to fabricate microcapsules for injectable delivery which can be used in a variety of applications such as drug development or cell therapies. . © 2018 IOP Publishing Ltd.

Volume and Mass Estimation of Three-Phase High Power Transformers for Space Applications

NASA Technical Reports Server (NTRS)

Kimnach, Greg L.

2004-01-01

Spacecraft historically have had sub-1kW(sub e), electrical requirements for GN&C, science, and communications: Galileo at 600W(sub e), and Cassini at 900W(sub e), for example. Because most missions have had the same order of magnitude power requirements, the Power Distribution Systems (PDS) use existing, space-qualified technology and are DC. As science payload and mission duration requirements increase, however, the required electrical power increases. Subsequently, this requires a change from a passive energy conversion (solar arrays and batteries) to dynamic (alternator, solar dynamic, etc.), because dynamic conversion has higher thermal and conversion efficiencies, has higher power densities, and scales more readily to higher power levels. Furthermore, increased power requirements and physical distribution lengths are best served with high-voltage, multi-phase AC to maintain distribution efficiency and minimize voltage drops. The generated AC-voltage must be stepped-up (or down) to interface with various subsystems or electrical hardware. Part of the trade-space design for AC distribution systems is volume and mass estimation of high-power transformers. The volume and mass are functions of the power rating, operating frequency, the ambient and allowable temperature rise, the types and amount of heat transfer available, the core material and shape, the required flux density in a core, the maximum current density, etc. McLyman has tabulated the performance of a number of transformers cores and derived a "cookbook" methodology to determine the volume of transformers, whereas Schawrze had derived an empirical method to estimate the mass of single-phase transformers. Based on the work of McLyman and Schwarze, it is the intent herein to derive an empirical solution to the volume and mass estimation of three-phase, laminated EI-core power transformers, having radiated and conducted heat transfer mechanisms available. Estimation of the mounting hardware, connectors, etc. is not included.

Increasing The Electric Field For An Improved Search For Time-Reversal Violation Using Radium-225

NASA Astrophysics Data System (ADS)

Powers, Adam

2017-09-01

Radium-225 atoms, because of their unusual pear-shaped nuclei, have an enhanced sensitivity to the violation of time reversal symmetry. A breakdown of this fundamental symmetry could help explain the apparent scarcity of antimatter in the Universe. Our goal is to improve the statistical sensitivity of an ongoing experiment that precisely measures the EDM of Radium-225. This can be done by increasing the electric field acting on the Radium atoms. We do this by increasing the voltage that can be reliably applied between two electrodes, and narrowing the gap between them. We use a varying high voltage system to condition the electrodes using incremental voltage ramp tests to achieve higher voltage potential differences. Using an adjustable gap mount to change the distance between the electrodes, specific metals for their composition, and a clean room procedure to keep particulates out of the system, we produce a higher and more stable electric field. Progress is marked by measurements of the leakage current between the electrodes during our incremental voltage ramp tests or emulated tests of the actual experiment, with low and constant current showing stability of the field. This project is supported by Michigan State University, and the US DOE, Office of Science, Office of Nuclear Physics, under Contract DE-AC02-06CH11357.

A Feasibility Study to Control Airfoil Shape Using THUNDER

NASA Technical Reports Server (NTRS)

Pinkerton, Jennifer L.; Moses, Robert W.

1997-01-01

The objective of this study was to assess the capabilities of a new out-of-plane displacement piezoelectric actuator called thin-layer composite-unimorph ferroelectric driver and sensor (THUNDER) to alter the upper surface geometry of a subscale airfoil to enhance performance under aerodynamic loading. Sixty test conditions, consisting of combinations of five angles of attack, four dc applied voltages, and three tunnel velocities, were studied in a tabletop wind tunnel. Results indicated that larger magnitudes of applied voltage produced larger wafer displacements. Wind-off displacements were also consistently larger than wind-on. Higher velocities produced larger displacements than lower velocities because of increased upper surface suction. Increased suction also resulted in larger displacements at higher angles of attack. Creep and hysteresis of the wafer, which were identified at each test condition, contributed to larger negative displacements for all negative applied voltages and larger positive displacements for the smaller positive applied voltage (+102 V). An elastic membrane used to hold the wafer to the upper surface hindered displacements at the larger positive applied voltage (+170 V). Both creep and hysteresis appeared bounded based on the analysis of several displacement cycles. These results show that THUNDER can be used to alter the camber of a small airfoil under aerodynamic loads.

Magnetoresistance in single-electron transistors comprising a superconducting island with ferromagnetic leads

NASA Astrophysics Data System (ADS)

Mizugaki, Yoshinao; Takiguchi, Masashi; Tamura, Nobuyuki; Shimada, Hiroshi

2018-03-01

We report electric and magnetic field responses of single-electron transistors (SETs) comprising a superconducting island with ferromagnetic (FM) leads. We fabricated two SETs, one of which had relatively high resistance and the other had relatively low resistance. The SETs had two states for the gate charge: SET-ON or SET-OFF. They also had two states for the FM lead magnetization: parallel (P) or anti-parallel (AP) configuration. Current-voltage characteristics of four SET states (“P & SET-ON,” “P & SET-OFF,” “AP & SET-ON,” and “AP & SET-OFF”) were measured at approximately 0.1 K in a compact dilution refrigerator. Magnetoresistance ratio (MRR) values were obtained for the SET-ON and SET-OFF states, respectively. The higher-resistance SET1 exhibited positive MRR values for all measured bias voltages. The MRR enhancement was confirmed for the SET-OFF state, which agreed well with the co-tunneling model. The lower-resistance SET2, on the other hand, exhibited negative and positive MRR values for higher and lower bias voltage conditions, respectively. The bias voltage for the MRR polarity reversal was changed by the gate voltage. It was also confirmed that the co-tunneling model was partially valid for negative MRR values.

Electrical safety for high voltage arrays

NASA Technical Reports Server (NTRS)

Marshall, N. A.

1983-01-01

A number of key electrical safety requirements for the high voltage arrays of central station photovoltaic power systems are explored. The suitability of representative industrial DC power switchgear for control and fault protection was evaluated. Included were AC/DC circuit breakers, electromechanical contactors and relays, load interruptors, cold disconnect devices, sectionalizing switches, and high voltage DC fuses. As appropriate, steady state and transient characteristics were analyzed. Failure modes impacting upon operation and maintenance safety were also identified, as were the voltage withstand and current interruption levels.

Reproducible and controllable induction voltage adder for scaled beam experiments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sakai, Yasuo; Nakajima, Mitsuo; Horioka, Kazuhiko

2016-08-15

A reproducible and controllable induction adder was developed using solid-state switching devices and Finemet cores for scaled beam compression experiments. A gate controlled MOSFET circuit was developed for the controllable voltage driver. The MOSFET circuit drove the induction adder at low magnetization levels of the cores which enabled us to form reproducible modulation voltages with jitter less than 0.3 ns. Preliminary beam compression experiments indicated that the induction adder can improve the reproducibility of modulation voltages and advance the beam physics experiments.

Morphology effect on the light scattering and dynamic response of polymer network liquid crystal phase modulator.

PubMed

Xiangjie, Zhao; Cangli, Liu; Jiazhu, Duan; Jiancheng, Zeng; Dayong, Zhang; Yongquan, Luo

2014-06-16

Polymer network liquid crystal (PNLC) was one of the most potential liquid crystal for submillisecond response phase modulation, which was possible to be applied in submillisecond response phase only spatial light modulator. But until now the light scattering when liquid crystal director was reoriented by external electric field limited its phase modulation application. Dynamic response of phase change when high voltage was applied was also not elucidated. The mechanism that determines the light scattering was studied by analyzing the polymer network morphology by SEM method. Samples were prepared by varying the polymerization temperature, UV curing intensity and polymerization time. The morphology effect on the dynamic response of phase change was studied, in which high voltage was usually applied and electro-striction effect was often induced. The experimental results indicate that the polymer network morphology was mainly characterized by cross linked single fibrils, cross linked fibril bundles or even both. Although the formation of fibril bundle usually induced large light scattering, such a polymer network could endure higher voltage. In contrast, although the formation of cross linked single fibrils induced small light scattering, such a polymer network cannot endure higher voltage. There is a tradeoff between the light scattering and high voltage endurance. The electro-optical properties such as threshold voltage and response time were taken to verify our conclusion. For future application, the monomer molecular structure, the liquid crystal solvent and the polymerization conditions should be optimized to generate optimal polymer network morphology.

Impact of Reflow on the Output Characteristics of Piezoelectric Microelectromechanical System Devices

NASA Astrophysics Data System (ADS)

Nogami, Hirofumi; Kobayashi, Takeshi; Okada, Hironao; Masuda, Takashi; Maeda, Ryutaro; Itoh, Toshihiro

2012-09-01

An animal health monitoring system and a wireless sensor node aimed at preventing the spread of animal-transmitted diseases and improving pastoral efficiency which are especially suitable for chickens, were developed. The sensor node uses a piezoelectric microelectromechanical system (MEMS) device and an event-driven system that is activated by the movements of a chicken. The piezoelectric MEMS device has two functions: a) it measures the activity of a chicken and b) switches the micro-control unit (MCU) of the wireless sensor node from the sleep mode. The piezoelectric MEMS device is required to produce high output voltages when the chicken moves. However, after the piezoelectric MEMS device was reflowed to the wireless sensor node, the output voltages of the piezoelectric MEMS device decreased. The main reason for this might be the loss of residual polarization, which is affected by the thermal load during the reflow process. After the reflow process, we were not able to apply a voltage to the piezoelectric MEMS device; thus, the piezoelectric output voltage was not increased by repoling the piezoelectric MEMS device. To address the thermal load of the reflow process, we established a thermal poling treatment, which achieves a higher temperature than the reflow process. We found that on increasing the thermal poling temperature, the piezoelectric output voltages did not decreased low significantly. Thus, we considered that a thermal poling temperature higher than that of the reflow process prevents the piezoelectric output voltage reduction caused by the thermal load.

Effects of atmospheric pressure plasma jet with floating electrode on murine melanoma and fibroblast cells

NASA Astrophysics Data System (ADS)

Xu, G.; Liu, J.; Yao, C.; Chen, S.; Lin, F.; Li, P.; Shi, X.; Zhang, Guan-Jun

2017-08-01

Atmospheric pressure cold plasma jets have been recently shown as a highly promising tool in certain cancer therapies. In this paper, an atmospheric pressure plasma jet (APPJ) with a one inner floating and two outer electrode configuration using helium gas for medical applications is developed. Subjected to a range of applied voltages with a frequency of 19.8 kHz at a fixed rate of gas flow (i.e., 3 l/min), electrical and optical characteristics of the APPJ are investigated. Compared with the device only with two outer electrodes, higher discharge current, longer jet, and more active species in the plasma plume at the same applied voltage together with the lower gas breakdown voltage can be achieved through embedding a floating inner electrode. Employing the APPJ with a floating electrode, the effects of identical plasma treatment time durations on murine melanoma cancer and normal fibroblast cells cultured in vitro are evaluated. The results of cell viability, cell apoptosis, and DNA damage detection show that the plasma can inactivate melanoma cells in a time-dependent manner from 10 s to 60 s compared with the control group (p < 0.05). However, for fibroblast cells compared with their control group, the plasma with treatment time from 30 s to 60 s can induce significant changes (p < 0.05), showing a less cytotoxic effect than that on melanoma cells at the same treatment time. The different basal reactive oxygen species level and antioxidant superoxide dismutase level of two kinds of cells may account for their different responses towards the identical plasma exposure.

Hardening communication ports for survival in electrical overstress environments

NASA Technical Reports Server (NTRS)

Clark, O. Melville

1991-01-01

Greater attention is being focused on the protection of data I/O ports since both experience and lab tests have shown that components at these locations are extremely vulnerable to electrical overstress (EOS) in the form of transient voltages. Lightning and electrostatic discharge (ESD) are the major contributors to these failures; however, these losses can be prevented. Hardening against transient voltages at both the board level and system level has a proven record of improving reliability by orders of magnitude. The EOS threats, typical failure modes, and transient voltage mitigation techniques are reviewed. Case histories are also reviewed.

A test technique for measuring lightning-induced voltages on aircraft electrical circuits

NASA Technical Reports Server (NTRS)

Walko, L. C.

1974-01-01

The development of a test technique used for the measurement of lightning-induced voltages in the electrical circuits of a complete aircraft is described. The resultant technique utilizes a portable device known as a transient analyzer capable of generating unidirectional current impulses similar to lightning current surges, but at a lower current level. A linear relationship between the magnitude of lightning current and the magnitude of induced voltage permitted the scaling up of measured induced values to full threat levels. The test technique was found to be practical when used on a complete aircraft.

Fast Rise Time and High Voltage Nanosecond Pulses at High Pulse Repetition Frequency

NASA Astrophysics Data System (ADS)

Miller, Kenneth E.; Ziemba, Timothy; Prager, James; Picard, Julian; Hashim, Akel

2015-09-01

Eagle Harbor Technologies (EHT), Inc. is conducting research to decrease the rise time and increase the output voltage of the EHT Nanosecond Pulser product line, which allows for independently, user-adjustable output voltage (0 - 20 kV), pulse width (20 - 500 ns), and pulse repetition frequency (0 - 100 kHz). The goals are to develop higher voltage pulses (50 - 60 kV), decrease the rise time from 20 to below 10 ns, and maintain the high pulse repetition capabilities. These new capabilities have applications to pseudospark generation, corona production, liquid discharges, and nonlinear transmission line driving for microwave production. This work is supported in part by the US Navy SBIR program.

Experimental investigation of distinguishable and non-distinguishable grayscales applicable in active-matrix organic light-emitting diodes for quality engineering

NASA Astrophysics Data System (ADS)

Yang, Henglong; Chang, Wen-Cheng; Lin, Yu-Hsuan; Chen, Ming-Hong

2017-08-01

The distinguishable and non-distinguishable 6-bit (64) grayscales of green and red organic light-emitting diode (OLED) were experimentally investigated by using high-sensitive photometric instrument. The feasibility of combining external detection system for quality engineering to compensate the grayscale loss based on preset grayscale tables was also investigated by SPICE simulation. The degradation loss of OLED deeply affects image quality as grayscales become inaccurate. The distinguishable grayscales are indicated as those brightness differences and corresponding current increments are differentiable by instrument. The grayscales of OLED in 8-bit (256) or higher may become nondistinguishable as current or voltage increments are in the same order of noise level in circuitry. The distinguishable grayscale tables for individual red, green, blue, and white colors can be experimentally established as preset reference for quality engineering (QE) in which the degradation loss is compensated by corresponding grayscale numbers shown in preset table. The degradation loss of each OLED colors is quantifiable by comparing voltage increments to those in preset grayscale table if precise voltage increments are detectable during operation. The QE of AMOLED can be accomplished by applying updated grayscale tables. Our preliminary simulation result revealed that it is feasible to quantify degradation loss in terms of grayscale numbers by using external detector circuitry.

Insight into multiple-triggering effect in DTSCRs for ESD protection

NASA Astrophysics Data System (ADS)

Zhang, Lizhong; Wang, Yuan; Wang, Yize; He, Yandong

2017-07-01

The diode-triggered silicon-controlled rectifier (DTSCR) is widely used for electrostatic discharge (ESD) protection in advanced CMOS process owing to its advantages, such as design simplification, adjustable trigger/holding voltage, low parasitic capacitance. However, the multiple-triggering effect in the typical DTSCR device may cause undesirable larger overall trigger voltage, which results in a reduced ESD safe margin. In previous research, the major cause is attributed to the higher current level required in the intrinsic SCR. The related discussions indicate that it seems to result from the current division rule between the intrinsic and parasitic SCR formed in the triggering process. In this letter, inserting a large space into the trigger diodes is proposed to get a deeper insight into this issue. The triggering current is observed to be regularly reduced along with the increased space, which confirms that the current division is determined by the parasitic resistance distributed between the intrinsic and parasitic SCR paths. The theoretical analysis is well confirmed by device simulation and transmission line pulse (TLP) test results. The reduced overall trigger voltage is achieved in the modified DTSCR structures due to the comprehensive result of the parasitic resistance vs triggering current, which indicates a minimized multiple-triggering effect. Project supported by the Beijing Natural Science Foundation, China (No. 4162030).

Effects of oxide replacement with fluoride at the CoFeB interface on interface magnetic anisotropy and its voltage control

NASA Astrophysics Data System (ADS)

Pankieiev, Mykhailo; Kita, Koji

2018-05-01

In this paper we report results of improving Co60Fe20B20 interface perpendicular magnetic anisotropy (PMA) by replacing neighbor oxide layer with fluoride one. We expected that fluorine as element with higher than oxide electronegativity could more effectively attract electrons from out-of-plane d orbitals of ferromagnetic, increasing role of in-plane orbitals. By this we wanted to increase PMA and its response to applied voltage bias. Polar magneto-optic Kerr effect measurement show decreasing of out-of-plane magnetic field needed to change magnetization to perpendicular in stacks with oxygen replaced by fluorine as well as increasing of coefficient of response to applied voltage α from < 10 fJ/Vm for CoFeB/Al2O3 interface to 20 fJ/Vm for CoFeB/AlF3/Al2O3 and 22 fJ/Vm for CoFeB/MgF2 stacks. Direct chemical interaction of Co with F was confirmed by x-ray photoelectron spectroscopy (XPS) measurement of Co2p core level region. Moreover angular-resolved XPS showed that F tends to stay at CoFeB interface rather than diffuse out of it.

In Situ XAS and XRD Studies of Substituted Spinel Lithium Manganese Oxides in the 4-5 V Region

DOE Office of Scientific and Technical Information (OSTI.GOV)

McBreen, J.; Mukerjee, S.; Yang, X. Q.

Partial substitution of Mn in lithium manganese oxide spinel materials by Cu and Ni greatly affects the electrochemistry and the phase behavior of the cathode. Substitution with either metal or with a combination of both shortens the 4.2 V plateau and results in higher voltage plateaus. In situ x-ray absorption (XAS) studies indicate that the higher voltage plateaus are related to redox processes on the substituents. In situ x-ray diffraction (XRD) on LiCu{sub 0.5}Mn{sub 1.5}O{sub 4} shows single phase behavior during the charge and discharge process. Three phases are observed for LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} and two phases are observedmore » in the case of LiNi{sub 0.25}Cu{sub 0.25}Mn{sub 1.5}O{sub 4}. The electrolyte stability is dependent on both the operating voltage and the cathode composition. Even though Ni substituted materials have lower voltages, the electrolyte is more stable in cells with the Cu substituted materials.« less

Effects of substrate voltage on noise characteristics and hole lifetime in SOI metal-oxide-semiconductor field-effect transistor photon detector.

PubMed

Putranto, Dedy Septono Catur; Priambodo, Purnomo Sidi; Hartanto, Djoko; Du, Wei; Satoh, Hiroaki; Ono, Atsushi; Inokawa, Hiroshi

2014-09-08

Low-frequency noise and hole lifetime in silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) are analyzed, considering their use in photon detection based on single-hole counting. The noise becomes minimum at around the transition point between front- and back-channel operations when the substrate voltage is varied, and increases largely on both negative and positive sides of the substrate voltage showing peculiar Lorentzian (generation-recombination) noise spectra. Hole lifetime is evaluated by the analysis of drain current histogram at different substrate voltages. It is found that the peaks in the histogram corresponding to the larger number of stored holes become higher as the substrate bias becomes larger. This can be attributed to the prolonged lifetime caused by the higher electric field inside the body of SOI MOSFET. It can be concluded that, once the inversion channel is induced for detection of the photo-generated holes, the small absolute substrate bias is favorable for short lifetime and low noise, leading to high-speed operation.

Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes

DOE PAGES

King, M. P.; Kaplar, R. J.; Dickerson, J. R.; ...

2016-10-31

Electrical performance and characterization of deep levels in vertical GaN P-i-N diodes grown on low threading dislocation density (~10 4 –10 6 cm –2) bulk GaN substrates are investigated. The lightly doped n drift region of these devices is observed to be highly compensated by several prominent deep levels detected using deep level optical spectroscopy at E c-2.13, 2.92, and 3.2 eV. A combination of steady-state photocapacitance and lighted capacitance-voltage profiling indicates the concentrations of these deep levels to be N t = 3 × 10 12, 2 × 10 15, and 5 × 10 14 cm –3, respectively. Themore » E c-2.92 eV level is observed to be the primary compensating defect in as-grown n-type metal-organic chemical vapor deposition GaN, indicating this level acts as a limiting factor for achieving controllably low doping. The device blocking voltage should increase if compensating defects reduce the free carrier concentration of the n drift region. Understanding the incorporation of as-grown and native defects in thick n-GaN is essential for enabling large V BD in the next-generation wide-bandgap power semiconductor devices. Furthermore, controlling the as-grown defects induced by epitaxial growth conditions is critical to achieve blocking voltage capability above 5 kV.« less

Electrical system architecture

DOEpatents

Algrain, Marcelo C [Peoria, IL; Johnson, Kris W [Washington, IL; Akasam, Sivaprasad [Peoria, IL; Hoff, Brian D [East Peoria, IL

2008-07-15

An electrical system for a vehicle includes a first power source generating a first voltage level, the first power source being in electrical communication with a first bus. A second power source generates a second voltage level greater than the first voltage level, the second power source being in electrical communication with a second bus. A starter generator may be configured to provide power to at least one of the first bus and the second bus, and at least one additional power source may be configured to provide power to at least one of the first bus and the second bus. The electrical system also includes at least one power consumer in electrical communication with the first bus and at least one power consumer in electrical communication with the second bus.

Pulse ignition characterization of mercury ion thruster hollow cathode using an improved pulse ignitor

NASA Technical Reports Server (NTRS)

Wintucky, E. G.; Gruber, R. P.

1978-01-01

An investigation of the high voltage pulse ignition characteristics of the 8 cm mercury ion thruster neutralizer cathode identified a low rate of voltage rise and long pulse duration as desirable factors for reliable cathode starting. Cathode starting breakdown voltages were measured over a range of mercury flow rates and tip heater powers for pulses with five different rates of voltage rise. Breakdown voltage requirements for the fastest rising pulse (2.5 to 3.0 kV/micro sec) were substantially higher (2 kV or more) than for the slowest rising pulse (0.3 to 0.5 kV/micro sec) for the same starting conditions. Also described is an improved, low impedance pulse ignitor circuit which reduces power losses and eliminates problems with control and packaging associated with earlier designs.

A high-voltage supply used on miniaturized RLG

NASA Astrophysics Data System (ADS)

Miao, Zhifei; Fan, Mingming; Wang, Yuepeng; Yin, Yan; Wang, Dongmei

2016-01-01

A high voltage power supply used in laser gyro is proposed in this paper. The power supply which uses a single DC 15v input and fly-back topology is adopted in the main circuit. The output of the power supply achieve high to 3.3kv voltage in order to light the RLG. The PFM control method is adopted to realize the rapid switching between the high voltage state and the maintain state. The resonant chip L6565 is used to achieve the zero voltage switching(ZVS), so the consumption is reduced and the power efficiency is improved more than 80%. A special circuit is presented in the control portion to ensure symmetry of the two RLG's arms current. The measured current accuracy is higher than 5‰ and the current symmetry of the two RLG's arms up to 99.2%.

Current–voltage characteristics of high-voltage 4H-SiC p{sup +}–n{sub 0}–n{sup +} diodes in the avalanche breakdown mode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Samsonova, T. P.

p{sup +}–n{sub 0}–n{sup +} 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm{sup 2}. It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10{sup –2} Ω cm{sup 2}), the electron drift velocity in the n{sub 0} base at electric fields higher than 10{sup 6} V/cm (7.8 × 10{sup 6} cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10{sup –4} K{sup –1}).

Emission rate and internal quantum efficiency enhancement in different geometrical shapes of GaN LED

NASA Astrophysics Data System (ADS)

Rashid, S.; Wahid, M. H. A.; Hambali, N. A. M. Ahmad; Halim, N. S. A. Abdul; Ramli, M. M.; Shahimin, M. M.

2017-09-01

This work is based on the development of light emitting diode (LED) using different geometry of top surface on GaN p-n junction structure. Three types of LED chips are designed with different top surface to differ whether p-type layer or p contact plays an important role in improving its efficiency. The voltage applied ranges from 0V to 4V. Current-voltage characteristic for all three samples are obtained and analyzed. The results show that dome shaped of p-type layer operating at 4V increases the emission rate and internal quantum efficiency up to 70%, which is two times higher than basic cylindrically LED chip. Moreover, this new design effectively solved the higher forward voltage problem of the usual curve surface of p-contact GaN LED.

Low-voltage high-performance organic thin film transistors with a thermally annealed polystyrene/hafnium oxide dielectric

NASA Astrophysics Data System (ADS)

Wang, Ying; Acton, Orb; Ting, Guy; Weidner, Tobias; Ma, Hong; Castner, David G.; Jen, Alex K.-Y.

2009-12-01

Low-voltage pentacene-based organic thin film transistors (OTFTs) are demonstrated with polystyrene (PS)/hafnium oxide (HfOx) hybrid dielectrics. Thermal annealing of PS films on HfOx at 120 °C (PS-120) induces a flatter orientation of the phenyl groups (tilt angle 65°) at the surface compared to PS films without annealing (PS-RT) (tilt angle 31°). The flatter phenyl group orientation leads to better matching of surface energy between pentacene and PS. Pentacene deposited on PS-120 display higher quality thin films with larger grain sizes and higher crystallinity. Pentacene OTFTs with PS-120/HfOx hybrid dielectrics can operate at low-voltage (<3 V) with high field-effect mobilities (1 cm2/V s), high on/off current ratios (106), and low subthreshold slopes (100 mV/dec).

Daikin Advanced Lithium Ion Battery Technology – High Voltage Electrolyte - REVISED

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sunstrom, Joseph; Hendershot, Ron E.

An evaluation of high voltage electrolytes which contain fluorochemicals as solvents/additive has been completed with the objective of formulating a safe, stable electrolyte capable of operation to 4.6 V. Stable cycle performance has been demonstrated in LiNi1/3Mn1/3Co1/3O2 (NMC111)/graphite cells to 4.5 V. The ability to operate at high voltage results in significant energy density gain (>30%) which would manifest as longer battery life resulting in higher range for electric vehicles. Alternatively, a higher energy density battery can be made smaller without sacrificing existing energy. In addition, the fluorinated electrolytes examined showed better safety performance when tested in abuse conditions. Themore » results are promising for future advanced battery development for vehicles as well as other applications.« less

Multilevel DC link inverter

DOEpatents

Su, Gui-Jia

2003-06-10

A multilevel DC link inverter and method for improving torque response and current regulation in permanent magnet motors and switched reluctance motors having a low inductance includes a plurality of voltage controlled cells connected in series for applying a resulting dc voltage comprised of one or more incremental dc voltages. The cells are provided with switches for increasing the resulting applied dc voltage as speed and back EMF increase, while limiting the voltage that is applied to the commutation switches to perform PWM or dc voltage stepping functions, so as to limit current ripple in the stator windings below an acceptable level, typically 5%. Several embodiments are disclosed including inverters using IGBT's, inverters using thyristors. All of the inverters are operable in both motoring and regenerating modes.

Investigation of voltage source design's for Electrical Impedance Mammography (EIM) Systems.

PubMed

Qureshi, Tabassum R; Chatwin, Chris R; Zhou, Zhou; Li, Nan; Wang, W

2012-01-01

According to Jossient, interesting characteristics of breast tissues mostly lie above 1MHz; therefore a wideband excitation source covering higher frequencies (i.e. above 1MHz) is required. The main objective of this research is to establish a feasible bandwidth envelope that can be used to design a constant EIM voltage source over a wide bandwidth with low output impedance for practical implementation. An excitation source is one of the major components in bio-impedance measurement systems. In any bio-impedance measurement system the excitation source can be achieved either by injecting current and measuring the resulting voltages, or by applying voltages and measuring the current developed. This paper describes three voltage source architectures and based on their bandwidth comparison; a differential voltage controlled voltage source (VCVS) is proposed, which can be used over a wide bandwidth (>15MHz). This paper describes the performance of the designed EIM voltage source for different load conditions and load capacitances reporting signal-to-noise ratio of approx 90dB at 10MHz frequency, signal phase and maximum of 4.75kΩ source output impedance at 10MHz. Optimum data obtained using Pspice® is used to demonstrate the high-bandwidth performance of the source.

The Series Connected Buck Boost Regulator Concept for High Efficiency Light Weight DC Voltage Regulation

NASA Technical Reports Server (NTRS)

Birchenough, Arthur G.

2003-01-01

Improvements in the efficiency and size of DC-DC converters have resulted from advances in components, primarily semiconductors, and improved topologies. One topology, which has shown very high potential in limited applications, is the Series Connected Boost Unit (SCBU), wherein a small DC-DC converter output is connected in series with the input bus to provide an output voltage equal to or greater than the input voltage. Since the DC-DC converter switches only a fraction of the power throughput, the overall system efficiency is very high. But this technique is limited to applications where the output is always greater than the input. The Series Connected Buck Boost Regulator (SCBBR) concept extends partial power processing technique used in the SCBU to operation when the desired output voltage is higher or lower than the input voltage, and the implementation described can even operate as a conventional buck converter to operate at very low output to input voltage ratios. This paper describes the operation and performance of an SCBBR configured as a bus voltage regulator providing 50 percent voltage regulation range, bus switching, and overload limiting, operating above 98 percent efficiency. The technique does not provide input-output isolation.

Gas composition sensing using carbon nanotube arrays

NASA Technical Reports Server (NTRS)

Li, Jing (Inventor); Meyyappan, Meyya (Inventor)

2008-01-01

A method and system for estimating one, two or more unknown components in a gas. A first array of spaced apart carbon nanotubes (''CNTs'') is connected to a variable pulse voltage source at a first end of at least one of the CNTs. A second end of the at least one CNT is provided with a relatively sharp tip and is located at a distance within a selected range of a constant voltage plate. A sequence of voltage pulses {V(t.sub.n)}.sub.n at times t=t.sub.n (n=1, . . . , N1; N1.gtoreq.3) is applied to the at least one CNT, and a pulse discharge breakdown threshold voltage is estimated for one or more gas components, from an analysis of a curve I(t.sub.n) for current or a curve e(t.sub.n) for electric charge transported from the at least one CNT to the constant voltage plate. Each estimated pulse discharge breakdown threshold voltage is compared with known threshold voltages for candidate gas components to estimate whether at least one candidate gas component is present in the gas. The procedure can be repeated at higher pulse voltages to estimate a pulse discharge breakdown threshold voltage for a second component present in the gas.

Fluorescent Protein Voltage Probes Derived from ArcLight that Respond to Membrane Voltage Changes with Fast Kinetics

PubMed Central

Han, Zhou; Jin, Lei; Platisa, Jelena; Cohen, Lawrence B.; Baker, Bradley J.; Pieribone, Vincent A.

2013-01-01

We previously reported the discovery of a fluorescent protein voltage probe, ArcLight, and its derivatives that exhibit large changes in fluorescence intensity in response to changes of plasma membrane voltage. ArcLight allows the reliable detection of single action potentials and sub-threshold activities in individual neurons and dendrites. The response kinetics of ArcLight (τ1-on ~10 ms, τ2-on ~ 50 ms) are comparable with most published genetically-encoded voltage probes. However, probes using voltage-sensing domains other than that from the Ciona intestinalis voltage sensitive phosphatase exhibit faster kinetics. Here we report new versions of ArcLight, in which the Ciona voltage-sensing domain was replaced with those from chicken, zebrafish, frog, mouse or human. We found that the chicken and zebrafish-based ArcLight exhibit faster kinetics, with a time constant (τ) less than 6ms for a 100 mV depolarization. Although the response amplitude of these two probes (8-9%) is not as large as the Ciona-based ArcLight (~35%), they are better at reporting action potentials from cultured neurons at higher frequency. In contrast, probes based on frog, mouse and human voltage sensing domains were either slower than the Ciona-based ArcLight or had very small signals. PMID:24312287

Left ventricular hypertrophy assessed by electrocardiogram is associated with more severe stroke and with higher in-hospital mortality in patients with acute ischemic stroke.

PubMed

Tziomalos, Konstantinos; Sofogianni, Areti; Angelopoulou, Stella-Maria; Christou, Konstantinos; Kostaki, Stavroula; Papagianni, Marianthi; Satsoglou, Sarantis; Spanou, Marianna; Savopoulos, Christos; Hatzitolios, Apostolos I

2018-07-01

Left ventricular hypertrophy (LVH), assessed by electrocardiogram (ECG), is associated with increased risk for stroke. However, few studies that evaluated whether ECG-detected LVH predicts ischemic stroke severity and outcome. We aimed to evaluate these associations. We prospectively studied 922 patients consecutively admitted with acute ischemic stroke (age 79.6 ± 6.9 years). Stroke severity was assessed at admission with the National Institutes of Health Stroke Scale (NIHSS). Severe stroke was defined as NIHSS≥5. LVH was evaluated with the Sokolow-Lyon index and the Cornell voltage-duration product criteria in an ECG obtained at admission. The outcome was assessed with dependency at discharge (modified Rankin scale 2-5) and in-hospital mortality. Independent predictors of severe stroke were age (relative risk (RR) per year 1.07, 95% confidence interval (CI) 1.03-1.11, p<0.001), female gender (RR 0.36, 95% CI 0.17-0.76, p<0.01), atrial fibrillation (RR 2.07, 95% CI 1.30-3.29, p<0.005), chronic kidney disease (RR 2.38, 95% CI 1.04-5.44, p<0.05), heart rate (RR per 1/min 1.02, 95% CI 1.01-1.04, p<0.005), glucose levels (RR 1.012, 95% CI 1.006-1.018, p<0.001), high-density lipoprotein cholesterol levels (RR 0.976, 95% CI 0.960-0.993, p<0.005) and LVH defined according to the Cornell voltage-duration product criteria (RR 2.08, 95% CI 1.12-3.86, p<0.05). Independent predictors of dependency at discharge were age (RR per year 1.08, 95% CI 1.03-1.13, p<0.001), past smoking (RR versus no smoking 0.42, 95% 0.19-0.89, p<0.05), history of ischemic stroke (RR 2.13, 95% CI 1.23-3.71, p<0.01) and NIHSS at admission (RR 1.48, 95% CI 1.35-1.63, p<0.001). Independent predictors of in-hospital mortality were glucose levels (RR 1.014, 95% CI 1.003-1.025, p<0.05), NIHSS at admission (RR 1.29, 95% CI 1.19-1.41, p<0.001) and LVH according to the Cornell voltage-duration product criteria (RR 4.95, 95% CI 1.09-22.37, p<0.05). LVH according to the Cornell voltage-duration product criteria appears to be associated with more severe stroke and with higher in-hospital mortality in patients with acute ischemic stroke. Copyright © 2018 Elsevier B.V. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burin, M. J.; Simmons, G. G.; Ceja, H. G.

The filamentary discharge seen within commercial plasma globes is commonly enjoyed yet not well understood. Here, we investigate the discharge properties of a plasma globe using a variable high voltage amplifier. We find that increasing voltage magnitude increases the number of filaments while leaving their individual structure basically unchanged, a result typical of dielectric barrier discharges. The frequency of the voltage also affects filament population but more significantly changes filament structure, with more diffuse filaments seen at lower frequencies. Voltage polarity is observed to be important, especially at lower frequencies, where for negative-gradient voltages the discharge is more diffuse, notmore » filamentary. At late stages of the discharge circular structures appear and expand on the glass boundaries. We find no trend of discharge speed with respect to voltage variables, though this may be due to manufacturer sample-to-sample variation. Each voltage cycle the discharge expands outward at ∼10–15 km/s, a speed significantly higher than the estimated electron drift yet considerably lower than that observed for most streamers. We discuss the physics of these observations and their relation to similar discharges that can be found within nature and industry.« less

Luminescence evolution from alumina ceramic surface before flashover under direct and alternating current voltage in vacuum

DOE Office of Scientific and Technical Information (OSTI.GOV)

Su, Guo-Qiang; Wang, Yi-Bo; Song, Bai-Peng

2016-06-15

The luminescence evolution phenomena from alumina ceramic surface in vacuum under high voltage of direct and alternating current are reported, with the voltage covering a large range from far below to close to the flashover voltage. Its time resolved and spatial distributed behaviors are examined by a photon counting system and an electron-multiplying charge-coupled device (EMCCD) together with a digital camera, respectively. The luminescence before flashover exhibits two stages as voltage increasing, i.e., under a relative low voltage (Stage A), the luminescence is ascribed to radiative recombination of hetero-charges injected into the sample surface layer by Schottky effect; under amore » higher voltage (Stage B), a stable secondary electron emission process, resulting from the Fowler-Nordheim emission at the cathode triple junction (CTJ), is responsible for the luminescence. Spectrum analysis implies that inner secondary electrons within the surface layer of alumina generated during the SSEE process also participate in the luminescence of Stage B. A comprehensive interpretation of the flashover process is formulated, which might promote a better understanding of flashover issue in vacuum.« less

Luminescence evolution from alumina ceramic surface before flashover under direct and alternating current voltage in vacuum

NASA Astrophysics Data System (ADS)

Su, Guo-Qiang; Wang, Yi-Bo; Song, Bai-Peng; Mu, Hai-Bao; Zhang, Guan-Jun; Li, Feng; Wang, Meng

2016-06-01

The luminescence evolution phenomena from alumina ceramic surface in vacuum under high voltage of direct and alternating current are reported, with the voltage covering a large range from far below to close to the flashover voltage. Its time resolved and spatial distributed behaviors are examined by a photon counting system and an electron-multiplying charge-coupled device (EMCCD) together with a digital camera, respectively. The luminescence before flashover exhibits two stages as voltage increasing, i.e., under a relative low voltage (Stage A), the luminescence is ascribed to radiative recombination of hetero-charges injected into the sample surface layer by Schottky effect; under a higher voltage (Stage B), a stable secondary electron emission process, resulting from the Fowler-Nordheim emission at the cathode triple junction (CTJ), is responsible for the luminescence. Spectrum analysis implies that inner secondary electrons within the surface layer of alumina generated during the SSEE process also participate in the luminescence of Stage B. A comprehensive interpretation of the flashover process is formulated, which might promote a better understanding of flashover issue in vacuum.

Breakdown characteristics of atmospheric dielectric barrier discharge in gas flow condition

NASA Astrophysics Data System (ADS)

Fan, Zhihui; Yan, Huijie; Wang, Yuying; Liu, Yidi; Guo, Hongfei; Ren, Chunsheng

2018-05-01

Experimental investigations of the breakdown characteristics of plate-to-plate dielectric barrier discharge excited by an AC source at different gas flow conditions are carried out. The ignition voltage for the appearance of the very first discharge filament and the breakdown voltage in each discharge half cycle in continuous operation are examined. As revealed by the results of the indoor air experiment, the ignition voltage manifests a monotonous increase with the increase in the gas flow rate, while the breakdown voltage has a marked decline at the low gas flow rate and increases slightly as the gas flow rate is higher than 10 m/s. As regards the obvious decreases in the ignition voltage and breakdown voltage, the decrease in the humidity with the increase in the gas flow rate plays a dominant role. As regards the increase in breakdown voltage, the memory effect from the preceding discharge is considered. The losses of metastable particles, together with particles having high translational energy in the gas flow, are considered to be the most critical factors.

Analysis of power gating in different hierarchical levels of 2MB cache, considering variation

NASA Astrophysics Data System (ADS)

Jafari, Mohsen; Imani, Mohsen; Fathipour, Morteza

2015-09-01

This article reintroduces power gating technique in different hierarchical levels of static random-access memory (SRAM) design including cell, row, bank and entire cache memory in 16 nm Fin field effect transistor. Different structures of SRAM cells such as 6T, 8T, 9T and 10T are used in design of 2MB cache memory. The power reduction of the entire cache memory employing cell-level optimisation is 99.7% with the expense of area and other stability overheads. The power saving of the cell-level optimisation is 3× (1.2×) higher than power gating in cache (bank) level due to its superior selectivity. The access delay times are allowed to increase by 4% in the same energy delay product to achieve the best power reduction for each supply voltages and optimisation levels. The results show the row-level power gating is the best for optimising the power of the entire cache with lowest drawbacks. Comparisons of cells show that the cells whose bodies have higher power consumption are the best candidates for power gating technique in row-level optimisation. The technique has the lowest percentage of saving in minimum energy point (MEP) of the design. The power gating also improves the variation of power in all structures by at least 70%.

Influence of the anisotropy on the performance of D-band SiC IMPATT diodes

NASA Astrophysics Data System (ADS)

Chen, Qing; Yang, Lin'an; Wang, Shulong; Zhang, Yue; Dai, Yang; Hao, Yue

2015-03-01

Numerical simulation has been made to predict the RF performance of <0001> direction and <> direction p+/n/n-/n+ (single drift region) 4H silicon carbide (4H-SiC) impact-ionization-avalanche-transit-time (IMPATT) diodes for operation at D-band frequencies. We observed that the output performance of 4H-SiC IMPATT diode is sensitive to the crystal direction of the one-dimensional current flow. The simulation results show that <0001> direction 4H-SiC IMPATT diode provides larger breakdown voltage for its lower electron and hole ionization rates and higher dc-to-rf conversion efficiency (η) for its higher ratio of drift zone voltage drop (VD) to breakdown voltage (VB) compared with those for <> direction 4H-SiC IMPATT diode, which lead to higher-millimeter-wave power output for <0001> direction 4H-SiC IMPATT compared to <> direction. However, the quality factor Q for the <> direction 4H-SiC IMPATT diode is lower than that of <0001> direction, which implies that the <> direction 4H-SiC IMPATT diode exhibits better stability and higher growth rate of microwave oscillation compared with <0001> direction 4H-SiC IMPATT diode.

The effect of voltage waveform and tube diameter on transporting cold plasma strings through a flexible dielectric tube

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sohbatzadeh, Farshad, E-mail: f.sohbat@umz.ac.ir; Nano and Biotechnology Research Group, Faculty of Basic Sciences, University of Mazandaran, Babolsar 47416-95447, Mazandaran; Omran, Azadeh Valinataj

2014-11-15

In this work, we developed transporting atmospheric pressure cold plasma using single electrode configuration through a sub-millimetre flexible dielectric tube beyond 100 cm. It was shown that the waveform of the applied high voltage is essential for controlling upstream and downstream plasma inside the tube. In this regard, sawtooth waveform enabled the transport of plasma with less applied high voltage compared to sinusoidal and pulsed form voltages. A cold plasma string as long as 130 cm was obtained by only 4 kV peak-to-peak sawtooth high voltage waveform. Optical emission spectroscopy revealed that reactive chemical species, such as atomic oxygen and hydroxyl, are generatedmore » at the tube exit. The effect of tube diameter on the transported plasma was also examined: the smaller the diameter, the higher the applied voltage. The device is likely to be used for sterilization, decontamination, and therapeutic endoscopy as already suggested by other groups in recent past years.« less

Electrofluid hydrolysis enhances the production of fermentable sugars from corncob via in/reverse-phase induced voltage.

PubMed

Wu, Fengfeng; Jin, Yamei; Li, Dandan; Zhou, Yuyi; Guo, Lunan; Zhang, Mengyue; Xu, Xueming; Yang, Na

2017-06-01

To improve the economic value of lignocellulosic biomasses, an innovative electrofluidic technology has been applied to the efficient hydrolysis of corncob. The system combines fluidic reactors and induced voltages via magnetoelectric coupling effect. The excitation voltage had a positive impact on reducing sugar content (RSC). But, the increase of voltage frequency at 400-700Hz caused a slight decline of the RSC. Higher temperature limits the electrical effect on the hydrolysis at 70-80°C. The energy efficiency increased under the addition of metallic ions and series of in-phase induced voltage to promote hydrolysis. In addition, the 4-series system with in-phase and reverse-phase induced voltages under the synchronous magnetic flux, exhibited a significant influence on the RSC with a maximum increase of 56%. High throughput could be achieved by increasing series in a compact system. Electrofluid hydrolysis avoids electrochemical reaction, electrode corrosion, and sample contamination. Copyright © 2017 Elsevier Ltd. All rights reserved.

Intraoral conversion of occlusal force to electricity and magnetism by biting of piezoelectric elements.

PubMed

Kameda, Takashi; Ohkuma, Kazuo; Sano, Natsuki; Ogura, Hideo; Terada, Kazuto

2012-01-01

Very weak electrical, magnetic and ultrasound signal stimulations are known to promote the formation, metabolism, restoration and stability of bone and surrounding tissues after treatment and operations. We have therefore investigated the possibility of intraoral generation of electricity and magnetism by occlusal force in an in vitro study. Biting bimorph piezoelectric elements with lead zirconate titanate (PZT) using dental models generated appropriate magnetism for bone formation, i. e. 0.5-0.6 gauss, and lower electric currents and higher voltages, i. e. 2.0-6.0 μA at 10-22 V (appropriate levels are 30 μA and 1.25 V), as observed by a universal testing machine. The electric currents and voltages could be changed using amplifier circuits. These results show that intraoral generation of electricity and magnetism is possible and could provide post-operative stabilization and activation of treated areas of bone and the surrounding tissues directly and/or indirectly by electrical, magnetic and ultrasound stimulation, which could accelerate healing.

Filtering and Control of High Speed Motor Current in a Flywheel Energy Storage System

NASA Technical Reports Server (NTRS)

Kenny, Barbara H.; Santiago, Walter

2004-01-01

The NASA Glenn Research Center has been developing technology to enable the use of high speed flywheel energy storage units in future spacecraft for the last several years. An integral part of the flywheel unit is the three phase motor/generator that is used to accelerate and decelerate the flywheel. The motor/generator voltage is supplied from a pulse width modulated (PWM) inverter operating from a fixed DC voltage supply. The motor current is regulated through a closed loop current control that commands the necessary voltage from the inverter to achieve the desired current. The current regulation loop is the innermost control loop of the overall flywheel system and, as a result, must be fast and accurate over the entire operating speed range (20,000 to 60,000 rpm) of the flywheel. The voltage applied to the motor is a high frequency PWM version of the DC bus voltage that results in the commanded fundamental value plus higher order harmonics. Most of the harmonic content is at the switching frequency and above. The higher order harmonics cause a rapid change in voltage to be applied to the motor that can result in large voltage stresses across the motor windings. In addition, the high frequency content in the motor causes sensor noise in the magnetic bearings that leads to disturbances for the bearing control. To alleviate these problems, a filter is used to present a more sinusoidal voltage to the motor/generator. However, the filter adds additional dynamics and phase lag to the motor system that can interfere with the performance of the current regulator. This paper will discuss the tuning methodology and results for the motor/generator current regulator and the impact of the filter on the control. Results at speeds up to 50,000 rpm are presented.

Low voltage alpha EEG phenotype is associated with reduced amplitudes of alpha event-related oscillations, increased cortical phase synchrony, and a low level of response to alcohol.

PubMed

Ehlers, Cindy L; Wills, Derek N; Phillips, Evelyn; Havstad, James

2015-10-01

Low voltage EEG (LVEEG) is a heritable phenotype that differs depending on ancestral heritage, yet its impact on brain networks and cognition remain relatively unexplored. In this study we assessed energy and task related phase locking of event-related oscillation (EROs), behavioral responses, measures of IQ and personality, and expected responses to alcohol in a large sample of individuals with LVEEG compared to those with higher voltage variants. Participants (n=762) were recruited from a Native American community and completed a diagnostic interview, the Quick Test, the Subjective High Assessment Scale Expectation Version (SHAS-E) and the Maudsley Personality Inventory. Clinical and spectral analyzed EEGs were collected for determination of the presence of a LVEEG variant. EROs were generated using a facial expression recognition task. Participants with LVEEG (n=451) were significantly more likely to be older, married and have higher degrees of Native American heritage but did not differ in gender, income or education. Individuals with LVEEG were also found to have decreased energy in their alpha EROs, increased phase locking between stimulus trials, and increased phase-locking between cortical brain areas. No significant differences in the cognitive tests, personality variables or alcohol dependence or anxiety diagnoses were found, however, individuals with LVEEG did report a larger number of drinks ever consumed in a 24-h period and a less intense expected response to alcohol. These data suggest that alpha power in the resting EEG is highly associated with energy and cortical connectivity measures generated by event-related stimuli, as well as potentially increased risk for alcohol use. Copyright © 2015 Elsevier B.V. All rights reserved.

Optimization of the Ion Source-Mass Spectrometry Parameters in Non-Steroidal Anti-Inflammatory and Analgesic Pharmaceuticals Analysis by a Design of Experiments Approach.

PubMed

Paíga, Paula; Silva, Luís M S; Delerue-Matos, Cristina

2016-10-01

The flow rates of drying and nebulizing gas, heat block and desolvation line temperatures and interface voltage are potential electrospray ionization parameters as they may enhance sensitivity of the mass spectrometer. The conditions that give higher sensitivity of 13 pharmaceuticals were explored. First, Plackett-Burman design was implemented to screen significant factors, and it was concluded that interface voltage and nebulizing gas flow were the only factors that influence the intensity signal for all pharmaceuticals. This fractionated factorial design was projected to set a full 2(2) factorial design with center points. The lack-of-fit test proved to be significant. Then, a central composite face-centered design was conducted. Finally, a stepwise multiple linear regression and subsequently an optimization problem solving were carried out. Two main drug clusters were found concerning the signal intensities of all runs of the augmented factorial design. p-Aminophenol, salicylic acid, and nimesulide constitute one cluster as a result of showing much higher sensitivity than the remaining drugs. The other cluster is more homogeneous with some sub-clusters comprising one pharmaceutical and its respective metabolite. It was observed that instrumental signal increased when both significant factors increased with maximum signal occurring when both codified factors are set at level +1. It was also found that, for most of the pharmaceuticals, interface voltage influences the intensity of the instrument more than the nebulizing gas flowrate. The only exceptions refer to nimesulide where the relative importance of the factors is reversed and still salicylic acid where both factors equally influence the instrumental signal. Graphical Abstract ᅟ.

VLED for Si wafer-level packaging

NASA Astrophysics Data System (ADS)

Chu, Chen-Fu; Chen, Chiming; Yen, Jui-Kang; Chen, Yung-Wei; Tsou, Chingfu; Chang, Chunming; Doan, Trung; Tran, Chuong Anh

2012-03-01

In this paper, we introduced the advantages of Vertical Light emitting diode (VLED) on copper alloy with Si-wafer level packaging technologies. The silicon-based packaging substrate starts with a <100> dou-ble-side polished p-type silicon wafer, then anisotropic wet etching technology is done to construct the re-flector depression and micro through-holes on the silicon substrate. The operating voltage, at a typical cur-rent of 350 milli-ampere (mA), is 3.2V. The operation voltage is less than 3.7V under higher current driving conditions of 1A. The VLED chip on Si package has excellent heat dissipation and can be operated at high currents up to 1A without efficiency degradation. The typical spatial radiation pattern emits a uniform light lambertian distribution from -65° to 65° which can be easily fit for secondary optics. The correlated color temperature (CCT) has only 5% variation for daylight and less than 2% variation for warm white, when the junction temperature is increased from 25°C to 110°C, suggesting a stable CCT during operation for general lighting application. Coupled with aspheric lens and micro lens array in a wafer level process, it has almost the same light distribution intensity for special secondary optics lighting applications. In addition, the ul-tra-violet (UV) VLED, featuring a silicon substrate and hard glass cover, manufactured by wafer level pack-aging emits high power UV wavelengths appropriate for curing, currency, document verification, tanning, medical, and sterilization applications.

Space charge dynamics Of CF4 fluorinated LDPE samples from different fluorination conditions and their DC conductivities

NASA Astrophysics Data System (ADS)

Liu, Ning; Li, Ziyun; Chen, George; Chen, Qiang; Li, Shengtao

2017-07-01

Taking advantage of plasma technology using mixing gas CF4/H2, a fluorination process was performed on LDPE samples in the present paper. Different exposure times and discharge voltage levels were applied to produce four different types of samples. It has been found that after fluorination, space charge injection is obviously suppressed. And with longer fluorination times and higher discharge voltage, injected homocharges are reduced. By employing x-ray photoelectron spectroscopy, new chemical groups of C-F bindings are confirmed to be introduced by fluorination process of the plasma treatment. The charge suppression effect can be explained as: surface traps introduced by fluorination will reduce the interface field at both electrodes. Moreover, for fluorinated samples, heterocharge emerges obviously under 30 kV \\text{m}{{\\text{m}}-1} , which are considered as charges ionized from degradation products of etching and/or lower weight molecular specifies. Through the conductivity measurements also performed at 30 kV \\text{m}{{\\text{m}}-1} , it is found that, for the fluorinated samples with the better charge blocking effect, the conductivity is lowered. However, the conductivity of the fluorinated sample with the lightest degree of fluorination is found to be higher than that of normal samples.

Axolemmal and septal conduction in the impedance of the earthworm medial giant nerve fiber.

PubMed Central

Krause, T L; Fishman, H M; Bittner, G D

1994-01-01

Ionic conduction in the axolemmal and septal membranes of the medial giant fiber (MGF) of the earthworm (EW) Lumbricus terrestris was assessed by impedance spectroscopy in the frequency range 2.5-1000 Hz. Impedance loci in the complex plane were described by two semi-circular arcs, one at a lower characteristic frequency (100 Hz) and the other at a higher frequency (500 Hz). The lower frequency arc had a chord resistance of 53 k omega and was not affected by membrane potential changes or ion channel blockers [tetrodotoxin (TTX), 3,4-diaminopyridine (3,4-DAP), 4-aminopyridine (4-AP), and tetraethylammonium (TEA)]. The higher frequency arc had a chord resistance of 274 k omega at resting potential, was voltage-dependent, and was affected by the addition of TTX, 3,4-DAP, 4-AP, and TEA to the physiological EW salines. When all four blockers were added to the bathing solution, the impedance locus was described by two voltage-independent arcs. Considering the effects of these and other (i.e., Cd and Ni) ion channel blockers, we conclude that: 1) the higher frequency locus reflects conduction by voltage-sensitive ion channels in the axolemmal membrane, which contains at least four ion channels selective for sodium, calcium, and potassium (delayed rectifier and calcium-dependent), and 2) the lower frequency locus reflects voltage-insensitive channels in the septal membrane, which separates adjacent MGFs. PMID:7524713

Over-current carrying characteristics of rectangular-shaped YBCO thin films prepared by MOD method

NASA Astrophysics Data System (ADS)

Hotta, N.; Yokomizu, Y.; Iioka, D.; Matsumura, T.; Kumagai, T.; Yamasaki, H.; Shibuya, M.; Nitta, T.

2008-02-01

A fault current limiter (FCL) may be manufactured at competitive qualities and prices by using rectangular-shaped YBCO films which are prepared by metal-organic deposition (MOD) method, because the MOD method can produce large size elements with a low-cost and non-vacuum technique. Prior to constructing a superconducting FCL (SFCL), AC over-current carrying experiments were conducted for 120 mm long elements where YBCO thin film of about 200 nm in thickness was coated on sapphire substrate with cerium oxide (CeO2) interlayer. In the experiments, only single cycle of the ac damping current of 50 Hz was applied to the pure YBCO element without protective metal coating or parallel resistor and the magnitude of the current was increased step by step until the breakdown phenomena occurred in the element. In each experiment, current waveforms flowing through the YBCO element and voltage waveform across the element were measured to get the voltage-current characteristics. The allowable over-current and generated voltage were successfully estimated for the pure YBCO films. It can be pointed out that the lower n-value trends to bring about the higher allowable over-current and the higher withstand voltage more than tens of volts. The YBCO film having higher n-value is sensitive to the over-current. Thus, some protective methods such as a metal coating should be employed for applying to the fault current limiter.

Modeling the instability behavior of thin film devices: Fermi Level Pinning

NASA Astrophysics Data System (ADS)

Moeini, Iman; Ahmadpour, Mohammad; Gorji, Nima E.

2018-05-01

We investigate the underlying physics of degradation/recovery of a metal/n-CdTe Schottcky junction under reverse or forward bias stressing conditions. We used Sah-Noyce-Shockley (SNS) theory to investigate if the swept of Fermi level pinning at different levels (under forward/reverse bias) is the origin of change in current-voltage characteristics of the device. This theory is based on Shockley-Read-Hall recombination within the depletion width and takes into account the interface defect levels. Fermi Level Pinning theory was primarily introduced by Ponpon and developed to thin film solar cells by Dharmadasa's group in Sheffield University-UK. The theory suggests that Fermi level pinning at multiple levels occurs due to high concentration of electron-traps or acceptor-like defects at the interface of a Schottky or pn junction and this re-arranges the recombination rate and charage collection. Shift of these levels under stress conditions determines the change in current-voltage characteristics of the cell. This theory was suggested for several device such as metal/n-CdTe, CdS/CdTe, CIGS/CdS or even GaAs solar cells without a modeling approach to clearly explain it's physics. We have applied the strong SNS modeling approach to shed light on Fermi Level Pinning theory. The modeling confirms that change in position of Fermi Level and it's pining in a lower level close to Valence band increases the recombination and reduces the open-circuit voltage. In contrast, Fermi Level pinning close to conduction band strengthens the electric field at the junction which amplifies the carrier collection and boosts the open-circuit voltage. This theory can well explain the stress effect on device characteristics of various solar cells or Schottky junctions by simply finding the right Fermi level pinning position at every specific stress condition.

Implementation of an active instructional design for teaching the concepts of current, voltage and resistance

NASA Astrophysics Data System (ADS)

Orlaineta-Agüero, S.; Del Sol-Fernández, S.; Sánchez-Guzmán, D.; García-Salcedo, R.

2017-01-01

In the present work we show the implementation of a learning sequence based on an active learning methodology for teaching Physics, this proposal tends to promote a better learning in high school students with the use of a comic book and it combines the use of different low-cost experimental activities for teaching the electrical concepts of Current, Resistance and Voltage. We consider that this kind of strategy can be easily extrapolated to higher-education levels like Engineering-college/university level and other disciplines of Science. To evaluate this proposal, we used some conceptual questions from the Electric Circuits Concept Evaluation survey developed by Sokoloff and the results from this survey was analysed with the Normalized Conceptual Gain proposed by Hake and the Concentration Factor that was proposed by Bao and Redish, to identify the effectiveness of the methodology and the models that the students presented after and before the instruction, respectively. We found that this methodology was more effective than only the implementation of traditional lectures, we consider that these results cannot be generalized but gave us the opportunity to view many important approaches in Physics Education; finally, we will continue to apply the same experiment with more students, in the same and upper levels of education, to confirm and validate the effectiveness of this methodology proposal.

Low-Cost energy contraption design using playground seesaw

NASA Astrophysics Data System (ADS)

Banlawe, I. A. P.; Acosta, N. J. E. L.

2017-05-01

The study was conducted at Western Philippines University, San Juan, Aborlan, Palawan. The study used the mechanical motion of playground seesaw as a means to produce electrical energy. The study aimed to design a low-cost prototype energy contraption using playground seesaw using locally available and recycled materials, to measure the voltage, current and power outputs produced at different situations and estimate the cost of the prototype. Using principle of pneumatics, two hand air pumps were employed on the two end sides of the playground seesaw and the mechanical motion of the seesaw up and down produces air that is used to rotate a DC motor to produce electrical energy. This electricity can be utilized for powering basic or low-power appliances. There were two trials of testing, each trial tests the different pressure level of the air tank and tests the opening of on-off valve (Full open and half open) when the compressed air was released. Results showed that all pressure level at full open produced significantly higher voltage, than the half open. However, the mean values of the current and power produced in all pressure level at full and half open have negligible variation. These results signify that the energy contraption using playground seesaw is an alternative viable source of electrical energy in the playgrounds, parks and other places and can be used as an auxiliary or back-up source for electricity.

Effects of Cascaded Voltage Collapse and Protection of Many Induction Machine Loads upon Load Characteristics Viewed from Bulk Transmission System

NASA Astrophysics Data System (ADS)

Kumano, Teruhisa

As known well, two of the fundamental processes which give rise to voltage collapse in power systems are the on load tap changers of transformers and dynamic characteristics of loads such as induction machines. It has been well established that, comparing among these two, the former makes slower collapse while the latter makes faster. However, in realistic situations, the load level of each induction machine is not uniform and it is well expected that only a part of loads collapses first, followed by collapse process of each load which did not go into instability during the preceding collapses. In such situations the over all equivalent collapse behavior viewed from bulk transmission level becomes somewhat different from the simple collapse driven by one aggregated induction machine. This paper studies the process of cascaded voltage collapse among many induction machines by time simulation, where load distribution on a feeder line is modeled by several hundreds of induction machines and static impedance loads. It is shown that in some cases voltage collapse really cascades among induction machines, where the macroscopic load dynamics viewed from upper voltage level makes slower collapse than expected by the aggregated load model. Also shown is the effects of machine protection of induction machines, which also makes slower collapse.

Electric-optic resonant phase modulator

NASA Technical Reports Server (NTRS)

Chen, Chien-Chung (Inventor); Robinson, Deborah L. (Inventor); Hemmati, Hamid (Inventor)

1994-01-01

An electro-optic resonant cavity is used to achieve phase modulation with lower driving voltages. Laser damage thresholds are inherently higher than with previously used integrated optics due to the utilization of bulk optics. Phase modulation is achieved at higher speeds with lower driving voltages than previously obtained with non-resonant electro-optic phase modulators. The instant scheme uses a data locking dither approach as opposed to the conventional sinusoidal locking schemes. In accordance with a disclosed embodiment, a resonant cavity modulator has been designed to operate at a data rate in excess of 100 Mbps. By carefully choosing the cavity finesse and its dimension, it is possible to control the pulse switching time to within 4 ns and to limit the required switching voltage to within 10 V. Experimentally, the resonant cavity can be maintained on resonance with respect to the input laser signal by monitoring the fluctuation of output intensity as the cavity is switched. This cavity locking scheme can be applied by using only the random data sequence, and without the need of additional dithering of the cavity. Compared to waveguide modulators, the resonant cavity has a comparable modulating voltage requirement. Because of its bulk geometry, resonant cavity modulator has the potential of accommodating higher throughput power. Furthermore, mode matching into a bulk device is easier and typically can be achieved with higher efficiency. On the other hand, unlike waveguide modulators which are essentially traveling wave devices, the resonant cavity modulator requires that the cavity be maintained in resonance with respect to the incoming laser signal. An additional control loop is incorporated into the modulator to maintain the cavity on resonance.

High cyclophilin D content of synaptic mitochondria results in increased vulnerability to permeability transition.

PubMed

Naga, Kranthi Kumari; Sullivan, Patrick G; Geddes, James W

2007-07-11

Mitochondria isolated from synaptosomes are more sensitive to Ca2+ overload and the resultant opening of the mitochondrial permeability transition pore (mPTP) than nonsynaptic mitochondria. To identify the mechanisms underlying these differences in Ca2+ dynamics, we examined relative levels of mPTP components in synaptic versus nonsynaptic mitochondria. Synaptic mitochondria had higher levels of cyclophilin D when compared with nonsynaptic mitochondria, whereas levels of the voltage-dependent anion channel and the adenine nucleotide translocase were similar in the two mitochondrial fractions. These differences in Ca2+ handling between synaptic and nonsynaptic mitochondria were greatly reduced in cyclophilin D null [Ppif-/- (peptidylprolyl isomerase F)] mice. Higher concentrations of cyclosporine A, which interacts with cyclophilin D to delay mPTP opening, were necessary to increase the Ca2+ uptake capacity of synaptic versus nonsynaptic mitochondria. To determine whether the differences in Ca2+ handling might reflect the relative abundance of neuronal and glial mitochondria in the two mitochondrial fractions, we compared cyclophilin D levels in primary cortical neurons and astrocytes. Primary rat cortical neurons possess higher cyclophilin D levels than do primary astrocytes. In the adult rat brain, cyclophilin D immunoreactivity was abundant in neurons but sparse in astrocytes. Together, these results demonstrate that the Ca2+ handling differences observed in synaptic versus nonsynaptic mitochondria are primarily the result of the high levels of cyclophilin D in synaptic mitochondria, reflecting the greater proportion of neuronal mitochondria in this fraction. The high levels of cyclophilin D in neuronal mitochondria result in their greater vulnerability to mPT and in higher levels of cyclosporine A being required to inhibit mPTP opening.

Bias-Voltage Stabilizer for HVHF Amplifiers in VHF Pulse-Echo Measurement Systems.

PubMed

Choi, Hojong; Park, Chulwoo; Kim, Jungsuk; Jung, Hayong

2017-10-23

The impact of high-voltage-high-frequency (HVHF) amplifiers on echo-signal quality is greater with very-high-frequency (VHF, ≥100 MHz) ultrasound transducers than with low-frequency (LF, ≤15 MHz) ultrasound transducers. Hence, the bias voltage of an HVHF amplifier must be stabilized to ensure stable echo-signal amplitudes. We propose a bias-voltage stabilizer circuit to maintain stable DC voltages over a wide input range, thus reducing the harmonic-distortion components of the echo signals in VHF pulse-echo measurement systems. To confirm the feasibility of the bias-voltage stabilizer, we measured and compared the deviations in the gain of the HVHF amplifier with and without a bias-voltage stabilizer. Between -13 and 26 dBm, the measured gain deviations of a HVHF amplifier with a bias-voltage stabilizer are less than that of an amplifier without a bias-voltage stabilizer. In order to confirm the feasibility of the bias-voltage stabilizer, we compared the pulse-echo responses of the amplifiers, which are typically used for the evaluation of transducers or electronic components used in pulse-echo measurement systems. From the responses, we observed that the amplitudes of the echo signals of a VHF transducer triggered by the HVHF amplifier with a bias-voltage stabilizer were higher than those of the transducer triggered by the HVHF amplifier alone. The second, third, and fourth harmonic-distortion components of the HVHF amplifier with the bias-voltage stabilizer were also lower than those of the HVHF amplifier alone. Hence, the proposed scheme is a promising method for stabilizing the bias voltage of an HVHF amplifier, and improving the echo-signal quality of VHF transducers.

Performance and Safety of Lithium Ion Cells

NASA Technical Reports Server (NTRS)

Ratnakumar, B. V.; Smart, M. C.; Whitcanack, L.; Surampudi, S.; Marsh, R.

2001-01-01

This report evaluates the performance and safety of Lithium Ion (Li-Ion) cells when used in batteries. Issues discussed include the cycle life, energy efficiency, tolerance to higher charge voltage, tolerance to extended tapered charge voltage, charge on cycling, specific energy, low temperature discharge, low temperature charge, various charge characteristics, storage characteristics, and more of Li-Ion cells.

Switching Characteristics of Ferroelectric Transistor Inverters

NASA Technical Reports Server (NTRS)

Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

2010-01-01

This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

On the reliability of voltage and power as input parameters for the characterization of high power ultrasound applications

NASA Astrophysics Data System (ADS)

Haller, Julian; Wilkens, Volker

2012-11-01

For power levels up to 200 W and sonication times up to 60 s, the electrical power, the voltage and the electrical impedance (more exactly: the ratio of RMS voltage and RMS current) have been measured for a piezocomposite high intensity therapeutic ultrasound (HITU) transducer with integrated matching network, two piezoceramic HITU transducers with external matching networks and for a passive dummy 50 Ω load. The electrical power and the voltage were measured during high power application with an inline power meter and an RMS voltage meter, respectively, and the complex electrical impedance was indirectly measured with a current probe, a 100:1 voltage probe and a digital scope. The results clearly show that the input RMS voltage and the input RMS power change unequally during the application. Hence, the indication of only the electrical input power or only the voltage as the input parameter may not be sufficient for reliable characterizations of ultrasound transducers for high power applications in some cases.

Sequential power-up circuit

DOEpatents

Kronberg, James W.

1992-01-01

A sequential power-up circuit for starting several electrical load elements in series to avoid excessive current surge, comprising a voltage ramp generator and a set of voltage comparators, each comparator having a different reference voltage and interfacing with a switch that is capable of turning on one of the load elements. As the voltage rises, it passes the reference voltages one at a time and causes the switch corresponding to that voltage to turn on its load element. The ramp is turned on and off by a single switch or by a logic-level electrical signal. The ramp rate for turning on the load element is relatively slow and the rate for turning the elements off is relatively fast. Optionally, the duration of each interval of time between the turning on of the load elements is programmable.

Electric power monthly, June 1988

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1988-09-15

Total net generation by electric utilities in the United States for the month of June 1988 was 232,183 gigawatthours, 3 percent higher than the amount reported a year ago. Although temperatures (measured by cooling degree days) for June 1988 were 9 percent warmer than normal, they were 3 percent cooler than for June 1987. A large portion of that higher demand for electricity was met by nuclear-powered generation. Net generation from nuclear power during June 1988 (44,079 gigawatthours) was only 1 percent below the record set in January of this year, and 21 percent above that reported in June 1987more » (36,560 gigawatthours). The only energy source other than nuclear that reported higher levels of net generation during June 1988 was coal, up 2 percent over the same period last year. Warmer-than-normal temperatures did, however, have an affect on various parts of the country. For example, on Wednesday, June 22, 1988, unseasonably high temperatures forced the Pennsylvania, New Jersey, and Maryland Interconnection (PJM) into a system-wide 5-percent voltage reduction for 2 hours. Contributing to that reduction in voltage was the shutdown of the Three Mile Island, Unit 1, for refueling and the closing of the Peach Bottom Units 2 and 3 by the Nuclear Regulatory Commission. Three Mile Island, Unit 1, normally provides the PJM system with about 800 megawatts while the two Peach Bottom units, combined, provide approximately 2100 megawatts. 10 refs., 1 fig., 27 tabs.« less

Electrically controlled lens and prism using nanoscale polymer-dispersed and polymer-networked liquid crystals

NASA Astrophysics Data System (ADS)

Fan, Yun Hsing; Ren, Hongwen; Wu, Shin Tson

2004-05-01

Inhomogeneous nanoscale polymer-dispersed liquid crystal (PDLC) devices having gradient nanoscale droplet distribution were fabricated. This gradient refractive index nanoscale (GRIN) PDLC film was obtained by exposing the LC/ monomer with a uniform ultraviolet (UV) light through a patterned photomask. The monomer and LC were mixed at 70: 30 wt% ratio. The area exposed to a weaker UV intensity would produce a larger droplet size, and vice versa. Owing to the nanoscale LC droplets involved, the GRIN PDLC devices are highly transparent in the whole visible region. The gradient refractive index profile can be used as switchable prism gratings, Fresnel lens, and positive and negative lenses with tunable focal lengths. Such a GRIN PDLC device is a broadband device and independent of light polarization. The diffraction efficiency of the lens is controllable by the applied voltage. The major advantages of the GRIN PDLC devices are in simple fabrication process, polarization-independent, and fast switching speed, although the required driving voltage is higher than 100 Vrms. To lower the driving voltage, the technique of polymer-networked liquid crystal (PNLC) has been developed. The PNLC was also produced by exposing the LC/monomer mixture with a uniform UV light through a patterned photomask. However, the monomer concentration in PNLC is only around 2-5 wt%. The formed PNLC structure exhibits a gradient polymer network distribution. The LC in the regions stabilized by a higher polymer concentration exhibits a higher threshold voltage. By using this technique, prism grating, tunable electronic lens and Fresnel lens have been demonstrated. The driving voltage is around 10 Vrms. A drawback of this kind of device is polarization dependence. To overcome the polarization dependence, stacking two orthogonal homogeneous PNLC lens is considered.

A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics

PubMed Central

Huang, Haiyun; Wang, Dejun; Xu, Yue

2015-01-01

This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW. PMID:26516864

A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics.

PubMed

Huang, Haiyun; Wang, Dejun; Xu, Yue

2015-10-27

This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW.

Carbon nanotubes for voltage reduction and throughput enhancement of electrical cell lysis on a lab-on-a-chip.

PubMed

Shahini, Mehdi; Yeow, John T W

2011-08-12

We report on the enhancement of electrical cell lysis using carbon nanotubes (CNTs). Electrical cell lysis systems are widely utilized in microchips as they are well suited to integration into lab-on-a-chip devices. However, cell lysis based on electrical mechanisms has high voltage requirements. Here, we demonstrate that by incorporating CNTs into microfluidic electrolysis systems, the required voltage for lysis is reduced by half and the lysis throughput at low voltages is improved by ten times, compared to non-CNT microchips. In our experiment, E. coli cells are lysed while passing through an electric field in a microchannel. Based on the lightning rod effect, the electric field strengthened at the tip of the CNTs enhances cell lysis at lower voltage and higher throughput. This approach enables easy integration of cell lysis with other on-chip high-throughput sample-preparation processes.

Impurity effects on electrical conductivity of doped bilayer graphene in the presence of a bias voltage

NASA Astrophysics Data System (ADS)

E, Lotfi; H, Rezania; B, Arghavaninia; M, Yarmohammadi

2016-07-01

We address the electrical conductivity of bilayer graphene as a function of temperature, impurity concentration, and scattering strength in the presence of a finite bias voltage at finite doping, beginning with a description of the tight-binding model using the linear response theory and Green’s function approach. Our results show a linear behavior at high doping for the case of high bias voltage. The effects of electron doping on the electrical conductivity have been studied via changing the electronic chemical potential. We also discuss and analyze how the bias voltage affects the temperature behavior of the electrical conductivity. Finally, we study the behavior of the electrical conductivity as a function of the impurity concentration and scattering strength for different bias voltages and chemical potentials respectively. The electrical conductivity is found to be monotonically decreasing with impurity scattering strength due to the increased scattering among electrons at higher impurity scattering strength.

Development of High Level Electrical Stress Failure Threshold and Prediction Model for Small Scale Junction Integrated Circuits

DTIC Science & Technology

1978-09-01

AWACS EMP Guidelines presents two different models to predict the damage pcwer of the dev-ce and the circuit damage EMP voltage ( VEMP ). Neither of...calculated as K P~ I V BD 6. The damage EMP voltage ( VEMP ) is calculated KZ EMP +IZ =D +BD VBD1F 7. The damage EMP voltage is calculated for collector

Fuel Cell Technology Status Composite Data Products | Hydrogen and Fuel

Science.gov Websites

Hours to 10% Stack Voltage Degradation CDP LAB 01, 5/8/17 Durability Lab Data Projection Sensitivity to Voltage Degradation Levels CDP LAB 02, 5/8/17 Field and Lab Durability Projection Comparison for LAB 04, 5/5/17 Comparison of MHE Field and Lab Data Voltage Durability CDP LAB 05, 5/3/2016 Data Set

Anolyte recirculation effects in buffered and unbuffered single-chamber air-cathode microbial fuel cells.

PubMed

Zhang, Liang; Zhu, Xun; Kashima, Hiroyuki; Li, Jun; Ye, Ding-Ding; Liao, Qiang; Regan, John M

2015-03-01

Two identical microbial fuel cells (MFCs) with a floating air-cathode were operated under either buffered (MFC-B) or bufferless (MFC-BL) conditions to investigate anolyte recirculation effects on enhancing proton transfer. With an external resistance of 50 Ω and recirculation rate of 1.0 ml/min, MFC-BL had a 27% lower voltage (9.7% lower maximal power density) but a 64% higher Coulombic efficiency (CE) than MFC-B. MFC-B had a decreased voltage output, batch time, and CE with increasing recirculation rate resulting from more oxygen transfer into the anode. However, increasing the recirculation rate within a low range significantly enhanced proton transfer in MFC-BL, resulting in a higher voltage output, a longer batch time, and a higher CE. A further increase in recirculation rate decreased the batch time and CE of MFC-BL due to excess oxygen transfer into anode outweighing the proton-transfer benefits. The unbuffered MFC had an optimal recirculation rate of 0.35 ml/min. Copyright © 2014 Elsevier Ltd. All rights reserved.

Open circuit voltage-decay behavior in amorphous p-i-n solar due to injection

NASA Astrophysics Data System (ADS)

Smrity, Manu; Dhariwal, S. R.

2018-05-01

The paper deals with the basic recombination processes at the dangling bond and the band tail states at various levels of injection, expressed in terms of short-circuit current density and their role in the behavior of amorphous solar cells. As the level of injection increases the fill factor decreases whereas the open circuit voltage increases very slowly, showing a saturation tendency. Calculations have been done for two values of tail state densities and shows that with an increase in tail state densities both, the fill factor and open circuit voltage decreases, results an overall degradation of the solar cell.

Multiple pore conformations driven by asynchronous movements of voltage sensors in a eukaryotic sodium channel

PubMed Central

Goldschen-Ohm, Marcel P.; Capes, Deborah L.; Oelstrom, Kevin M.; Chanda, Baron

2013-01-01

Voltage-dependent Na+ channels are crucial for electrical signalling in excitable cells. Membrane depolarization initiates asynchronous movements in four non-identical voltage-sensing domains of the Na+ channel. It remains unclear to what extent this structural asymmetry influences pore gating as compared with outwardly rectifying K+ channels, where channel opening results from a final concerted transition of symmetric pore gates. Here we combine single channel recordings, cysteine accessibility and voltage clamp fluorimetry to probe the relationships between voltage sensors and pore conformations in an inactivation deficient Nav1.4 channel. We observe three distinct conductance levels such that DI-III voltage sensor activation is kinetically correlated with formation of a fully open pore, whereas DIV voltage sensor movement underlies formation of a distinct subconducting pore conformation preceding inactivation in wild-type channels. Our experiments reveal that pore gating in sodium channels involves multiple transitions driven by asynchronous movements of voltage sensors. These findings shed new light on the mechanism of coupling between activation and fast inactivation in voltage-gated sodium channels. PMID:23322038

Development of a solar charged laboratory bench power supply

NASA Astrophysics Data System (ADS)

Ayara, W. A.; Omotosho, T. V.; Usikalu, M. R.; Singh, M. S. J.; Suparta, W.

2017-05-01

This product is an improvement on available DC laboratory bench power supply. It is capable of delivering low voltage Alternating Current (AC) and Direct Current (DC) to carry out basic laboratory experiment for both secondary schools and also at higher education institutions. The power supply is capable of delivering fixed DC voltages of 5V, 9V, 12V, variable voltage of between 1.25-30V and a 12V AC voltage. Also Incorporated is a USB port that allows for charging cell phones and other mobile devices, and a dedicated 12V DC output to power 5-7 Watt LED bulb to provide illumination in the laboratory for the instructor who may need to work at night in the absence of utility power.

Emissions from Electronic Cigarettes: Assessing Vapers' Intake of Toxic Compounds, Secondhand Exposures, and the Associated Health Impacts.

PubMed

Logue, Jennifer M; Sleiman, Mohamad; Montesinos, V Nahuel; Russell, Marion L; Litter, Marta I; Benowitz, Neal L; Gundel, Lara A; Destaillats, Hugo

2017-08-15

E-cigarettes likely represent a lower risk to health than traditional combustion cigarettes, but they are not innocuous. Recently reported emission rates of potentially harmful compounds were used to assess intake and predict health impacts for vapers and bystanders exposed passively. Vapers' toxicant intake was calculated for scenarios in which different e-liquids were used with various vaporizers, battery power settings and vaping regimes. For a high rate of 250 puff day -1 using a typical vaping regime and popular tank devices with battery voltages from 3.8 to 4.8 V, users were predicted to inhale formaldehyde (up to 49 mg day -1 ), acrolein (up to 10 mg day -1 ) and diacetyl (up to 0.5 mg day -1 ), at levels that exceeded U.S. occupational limits. Formaldehyde intake from 100 daily puffs was higher than the amount inhaled by a smoker consuming 10 conventional cigarettes per day. Secondhand exposures were predicted for two typical indoor scenarios: a home and a bar. Contributions from vaping to air pollutant concentrations in the home did not exceed the California OEHHA 8-h reference exposure levels (RELs), except when a high emitting device was used at 4.8 V. In that extreme scenario, the contributions from vaping amounted to as much as 12 μg m -3 formaldehyde and 2.6 μg m -3 acrolein. Pollutant concentrations in bars were modeled using indoor volumes, air exchange rates and the number of hourly users reported in the literature for U.S. bars in which smoking was allowed. Predicted contributions to indoor air levels were higher than those in the residential scenario. Formaldehyde (on average 135 μg m -3 ) and acrolein (28 μg m -3 ) exceeded the acute 1-h exposure REL for the highest emitting vaporizer/voltage combination. Predictions for these compounds also exceeded the 8-h REL in several bars when less intense vaping conditions were considered. Benzene concentrations in a few bars approached the 8-h REL, and diacetyl levels were close to the lower limit for occupational exposures. The integrated health damage from passive vaping was derived by computing disability-adjusted life years (DALYs) lost due to exposure to secondhand vapor. Acrolein was the dominant contributor to the aggregate harm. DALYs for the various device/voltage combinations were lower than-or comparable to-those estimated for exposures to secondhand and thirdhand tobacco smoke.

Formation of diamond nanoparticle thin films by electrophoretic deposition

NASA Astrophysics Data System (ADS)

Goto, Yosuke; Ohishi, Fujio; Tanaka, Kuniaki; Usui, Hiroaki

2016-03-01

Thin films of diamond nanoparticles were prepared by electrophoretic deposition (EPD) using 0.5 wt % dispersions in water, ethanol, and 2-propanol. The film growth rate increased with increasing voltage applied to the electrodes. However, an excessive increase in voltage caused the degradation of film morphology. The optimum voltage was 4 V with an electrode separation of 5 mm. The film growth rate was higher in organic solvents than in water. The deposited film had a smooth surface with an average surface roughness comparable to the size of primary particles of the source material. It is notable that the EPD films had a considerably higher physical stability than spin-coated and cast films. The stability was further improved by thermally annealing the films. IR analysis revealed that the diamond nanoparticles have carboxy and amino groups on their surfaces. It is considered that the stability of the EPD films originate from a chemical reaction between these functional groups.

Cascaded Emission Regions in 2.4 μm GaInAsSb Light Emitting Diode's for Improved Current Efficiency

NASA Astrophysics Data System (ADS)

Prineas, John; Yager, Jeff; Olesberg, Jonathon; Cao, Chuanshun; Reddy, Madhu; Coretsopoulos, Chris

2008-03-01

Infrared optoelectronics play an important role in sensing of molecules through characteristic vibrational resonances that occur at those wavelengths. For molecules in aqueous and at room temperature, where optical transistions tend to be broad, the broadband emission of light emitting diodes (LEDs) are well suited for obtaining molecular absorption spectra. The 2-2.6 μm range is an advantageous range for sensing of glucose. Voltages available in batteries and control electronics are limited to much higher voltages than those required to turn on an infrared LED, and moreover have limited current supply. Here, we demonstrate room temperature operature of 5-stage cascaded emission regions in 2-2.6 μm GaInAsSb LEDs. We report three times higher turn on voltage, and nine times improved current efficiency compared to a single stage device.

Restrictive loads powered by separate or by common electrical sources

NASA Technical Reports Server (NTRS)

Appelbaum, J.

1989-01-01

In designing a multiple load electrical system, the designer may wish to compare the performance of two setups: a common electrical source powering all loads, or separate electrical sources powering individual loads. Three types of electrical sources: an ideal voltage source, an ideal current source, and solar cell source powering resistive loads were analyzed for their performances in separate and common source systems. A mathematical proof is given, for each case, indicating the merit of the separate or common source system. The main conclusions are: (1) identical resistive loads powered by ideal voltage sources perform the same in both system setups, (2) nonidentical resistive loads powered by ideal voltage sources perform the same in both system setups, (3) nonidentical resistive loads powered by ideal current sources have higher performance in separate source systems, and (4) nonidentical resistive loads powered by solar cells have higher performance in a common source system for a wide range of load resistances.

Evaluation program for secondary spacecraft cells. Initial evaluation tests of General Electric Company standard and teflonated negative electrode 20.0 ampere-hour, nickel-cadmium spacecraft cells with auxiliary electrodes

NASA Technical Reports Server (NTRS)

1974-01-01

The standard plate cells exhibited higher average end-of-charge (EOC) voltages than the cells with teflonated negative plates; they also delivered a higher capacity output in ampere hours following these charges. All the cells reached a pressure of 20 psia before reaching the voltage limit of 1.550 volts during the pressure versus capacity test. The average ampere hours in and voltages at this pressure were 33.6 and 1.505 volts respectively for the teflonated negative plate cells and 35.5 and 1.523 volts for the standard plate cells. All cells exhibited pressure decay in the range of 1 to 7 psia during the last 30 minutes of the 1-hour open circuit stand. Average capacity out for the teflonated and standard negative plate cells was 29.4 and 29.9 ampere hours respectively.

The effect of DC voltage polarity on ionic wind in ambient air for cooling purposes

NASA Astrophysics Data System (ADS)

Chen, She; van den Berg, R. G. W.; Nijdam, S.

2018-05-01

Gas flows can be induced by gas discharges like DC coronas because neutral molecules gain momentum by ion-neutral collisions. This can be used for active cooling and has advantages over mechanical fans. We investigate ionic wind by a DC corona discharge under different conditions with an emphasis on the effects of voltage polarity and the transition between different discharge regimes. We also consider the gas temperature of a DC corona which is important when it is to be used for cooling purposes. Although DC coronas are usually characterized as low temperature plasmas, gas heating can have a significant impact on flow generation, especially at higher operating voltages. In this paper, a 5–20 kV DC voltage of positive and negative polarity is applied to a needle–cylinder electrode. The ionic wind velocity at the exit of the cylinder electrode is measured by hot wire anemometry and the emission spectrum is used to study the gas temperature. It is found that the flow velocity induced by positive coronas is higher than that by negative coronas for voltages above 10–15 kV, which is also demonstrated by a phenomenological EHD force model. Furthermore, a heated column is observed by Schlieren technique for both voltage polarities. An improved self-consistent ionic wind model considering heat transfer is built to study the temperature distribution. The simulation results indicate that the gas flow velocity is lower on the symmetry axis when the temperature gradient is taken into account, something which is usually ignored in ionic wind simulations.

Influence of the voltage waveform during nanocomposite layer deposition by aerosol-assisted atmospheric pressure Townsend discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Profili, J.; Département de Physique, Université de Montréal, Montréal, Québec H3C 3J7; Levasseur, O.

2016-08-07

This work examines the growth dynamics of TiO{sub 2}-SiO{sub 2} nanocomposite coatings in plane-to-plane Dielectric Barrier Discharges (DBDs) at atmospheric pressure operated in a Townsend regime using nebulized TiO{sub 2} colloidal suspension in hexamethyldisiloxane as the growth precursors. For low-frequency (LF) sinusoidal voltages applied to the DBD cell, with voltage amplitudes lower than the one required for discharge breakdown, Scanning Electron Microscopy of silicon substrates placed on the bottom DBD electrode reveals significant deposition of TiO{sub 2} nanoparticles (NPs) close to the discharge entrance. On the other hand, at higher frequencies (HF), the number of TiO{sub 2} NPs deposited stronglymore » decreases due to their “trapping” in the oscillating voltage and their transport along the gas flow lines. Based on these findings, a combined LF-HF voltage waveform is proposed and used to achieve significant and spatially uniform deposition of TiO{sub 2} NPs across the whole substrate surface. For higher voltage amplitudes, in the presence of hexamethyldisiloxane and nitrous oxide for plasma-enhanced chemical vapor deposition of inorganic layers, it is found that TiO{sub 2} NPs become fully embedded into a silica-like matrix. Similar Raman spectra are obtained for as-prepared TiO{sub 2} NPs and for nanocomposite TiO{sub 2}-SiO{sub 2} coating, suggesting that plasma exposure does not significantly alter the crystalline structure of the TiO{sub 2} NPs injected into the discharge.« less

Layered oxide, graphite and silicon-graphite electrodes for Lithium-ion cells: Effect of electrolyte composition and cycling windows

DOE PAGES

Klett, Matilda; Gilbert, James A.; Pupek, Krzysztof Z.; ...

2016-10-14

The electrochemical performance of cells with a Li 1.03(Ni 0.5Co 0.2Mn 0.3) 0.97O 2 (NCM523) positive electrode and a blended silicon-graphite (Si-Gr) negative electrode are investigated using various electrolyte compositions and voltage cycling windows. Voltage profiles of the blended Si-Gr electrode show a superposition of graphite potential plateaus on a sloped Si profile with a large potential hysteresis. The effect of this hysteresis is seen in the cell impedance versus voltage data, which are distinctly different for the charge and discharge cycles. We confirm that the addition of compounds, such as vinylene carbonate (VC) and fluoroethylene carbonate (FEC) to themore » baseline 1.2 M LiPF 6 in ethylene carbonate (EC): ethyl methyl carbonate (EMC) (3:7 w/w) electrolyte, improves cell capacity retention with higher retention seen at higher additive contents. We show that reducing the lower cutoff voltage (LCV) of full cells to 2.5 V increases the Si-Gr electrode potential to 1.12 V vs. Li/Li +; this relatively-high delithiation potential correlates with the lower capacity retention displayed by the cell. Hence, we show that raising the upper cutoff voltage (UCV) can increase cell energy density without significantly altering capacity retention over 100 charge discharge cycles.« less

High breakdown voltage and high driving current in a novel silicon-on-insulator MESFET with high- and low-resistance boxes in the drift region

NASA Astrophysics Data System (ADS)

Naderi, Ali; Mohammadi, Hamed

2018-06-01

In this paper a novel silicon-on-insulator metal oxide field effect transistor (SOI-MESFET) with high- and low-resistance boxes (HLRB) is proposed. This structure increases the current and breakdown voltage, simultaneously. The semiconductor at the source side of the channel is doped with higher impurity than the other parts to reduce its resistance and increase the driving current as low-resistance box. An oxide box is implemented at the upper part of the channel from the drain region toward the middle of the channel as the high-resistance box. Inserting a high-resistance box increases the breakdown voltage and improves the RF performance of the device because of its higher tolerable electric field and modification in gate-drain capacitance, respectively. The high-resistance region reduces the current density of the device which is completely compensated by low-resistance box. A 92% increase in breakdown voltage and an 11% improvement in the device current have been obtained. Also, maximum oscillation frequency, unilateral power gain, maximum available gain, maximum stable gain, and maximum output power density are improved by 7%, 35%, 23%, 26%, and 150%, respectively. These results show that the HLRB-SOI-MESFET can be considered as a candidate to replace Conventional SOI-MESFET (C-SOI-MESFET) for high-voltage and high-frequency applications.

Layered oxide, graphite and silicon-graphite electrodes for Lithium-ion cells: Effect of electrolyte composition and cycling windows

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klett, Matilda; Gilbert, James A.; Pupek, Krzysztof Z.

The electrochemical performance of cells with a Li 1.03(Ni 0.5Co 0.2Mn 0.3) 0.97O 2 (NCM523) positive electrode and a blended silicon-graphite (Si-Gr) negative electrode are investigated using various electrolyte compositions and voltage cycling windows. Voltage profiles of the blended Si-Gr electrode show a superposition of graphite potential plateaus on a sloped Si profile with a large potential hysteresis. The effect of this hysteresis is seen in the cell impedance versus voltage data, which are distinctly different for the charge and discharge cycles. We confirm that the addition of compounds, such as vinylene carbonate (VC) and fluoroethylene carbonate (FEC) to themore » baseline 1.2 M LiPF 6 in ethylene carbonate (EC): ethyl methyl carbonate (EMC) (3:7 w/w) electrolyte, improves cell capacity retention with higher retention seen at higher additive contents. We show that reducing the lower cutoff voltage (LCV) of full cells to 2.5 V increases the Si-Gr electrode potential to 1.12 V vs. Li/Li +; this relatively-high delithiation potential correlates with the lower capacity retention displayed by the cell. Hence, we show that raising the upper cutoff voltage (UCV) can increase cell energy density without significantly altering capacity retention over 100 charge discharge cycles.« less

Effects of an applied voltage on direct interspecies electron transfer via conductive materials for methane production.

PubMed

Lee, Jung-Yeol; Park, Jeong-Hoon; Park, Hee-Deung

2017-10-01

Direct interspecies electron transfer (DIET) between exoelectrogenic bacteria and methanogenic archaea via conductive materials is reported as an efficient method to produce methane in anaerobic organic waste digestion. A voltage can be applied to the conductive materials to accelerate the DIET between two groups of microorganisms to produce methane. To evaluate this hypothesis, two sets of anaerobic serum bottles with and without applied voltage were used with a pair of graphite rods as conductive materials to facilitate DIET. Initially, the methane production rate was similar between the two sets of serum bottles, and later the serum bottles with an applied voltage of 0.39V showed a 168% higher methane production rate than serum bottles without an applied voltage. In cyclic voltammograms, the characteristic redox peaks for hydrogen and acetate oxidation were identified in the serum bottles with an applied voltage. In the microbial community analyses, hydrogenotrophic methanogens (e.g. Methanobacterium) were observed to be abundant in serum bottles with an applied voltage, while methanogens utilizing carbon dioxide (e.g., Methanosaeta and Methanosarcina) were dominant in serum bottles without an applied voltage. Taken together, the applied voltage on conductive materials might not be effective to promote DIET in methane production. Instead, it appeared to generate a condition for hydrogenotrophic methanogenesis. Copyright © 2017 Elsevier Ltd. All rights reserved.

A High Frequency Active Voltage Doubler in Standard CMOS Using Offset-Controlled Comparators for Inductive Power Transmission

PubMed Central

Lee, Hyung-Min; Ghovanloo, Maysam

2014-01-01

In this paper, we present a fully integrated active voltage doubler in CMOS technology using offset-controlled high speed comparators for extending the range of inductive power transmission to implantable microelectronic devices (IMD) and radio-frequency identification (RFID) tags. This active voltage doubler provides considerably higher power conversion efficiency (PCE) and lower dropout voltage compared to its passive counterpart and requires lower input voltage than active rectifiers, leading to reliable and efficient operation with weakly coupled inductive links. The offset-controlled functions in the comparators compensate for turn-on and turn-off delays to not only maximize the forward charging current to the load but also minimize the back current, optimizing PCE in the high frequency (HF) band. We fabricated the active voltage doubler in a 0.5-μm 3M2P std. CMOS process, occupying 0.144 mm2 of chip area. With 1.46 V peak AC input at 13.56 MHz, the active voltage doubler provides 2.4 V DC output across a 1 kΩ load, achieving the highest PCE = 79% ever reported at this frequency. In addition, the built-in start-up circuit ensures a reliable operation at lower voltages. PMID:23853321

Performance and Reliability of Electrowetting-on-Dielectric (EWOD) Systems Based on Tantalum Oxide.

PubMed

Mibus, Marcel; Zangari, Giovanni

2017-12-06

The electrowetting-on-dielectric behavior of Cytop/Tantalum oxide (TaOx) bilayers is studied by measuring their response vs applied voltage and under prolonged periodic cycling, below and above the threshold voltage V T corresponding to the breakdown field for the oxide. TaOx exhibits symmetric solid state I-V characteristics, with electronic conduction dominated by Schottky, Poole-Frenkel emission; conduction is attributed to oxygen vacancies (6 × 10 16 cm -3 ), resulting in large currents at low bias. Electrolyte/Metal Oxide/Metal I-V characteristics show oxide degradation at (<5 V) cathodic bias; anodic bias in contrast results in stable characteristics until reaching the anodization voltage, where the oxide thickens, leading eventually to breakdown and oxygen production at the electrode. Electrowetting angle vs applied voltage undergoes three different stages: a parabolic variation of contact angle (CA) with applied voltage, CA saturation, and rebound of the CA to higher values due to degradation of the polymer layer. The contact angle remained stable for several hundred cycles if the applied voltage was less than V T ; degradation in contrast is fast when the voltage is above V T . Degradation of the electrowetting response with time is linked to charge accumulation in the polymer, which inhibits the rebound of the CA when voltage is being applied.

A Smart Load Interface and Voltage Regulator for Electrostatic Vibration Energy Harvester

NASA Astrophysics Data System (ADS)

Bedier, Mohammed; Basset, Philippe; Galayko, Dimitri

2016-11-01

This paper presents a new implementation in ams 0.35μm HV technology of a complete energy management system for an electrostatic vibrational energy harvester (e-VEH). It is based on the Bennet's doubler architecture and includes a load voltage regulator (LVR) and a smart Load Interface (LI) that are self-controlled with internal voltages for maximum power point tracking (MMPT). The CMOS implementation makes use of an energy harvester that is capable of producing up to 1.8μW at harmonic excitation, given its internal voltage is kept within its optimum. An intermediate LI stage and its controller makes use of a high side switch with zero static power level shifter, and a low power hysteresis comparator. A full circuit level simulation with a VHDL-AMS model of the e-VEH presented was successfully achieved, indicating that the proposed load interface controller consumes less than 100nW average power. Moreover, a LVR regulates the buffer and discharge the harvested energy into a generic resistive load maintaining the voltage within a nominal value of 2 Volts.

Photovoltaic array: Power conditioner interface characteristics

NASA Technical Reports Server (NTRS)

Gonzalez, C. C.; Hill, G. M.; Ross, R. G., Jr.

1982-01-01

The electrical output (power, current, and voltage) of flat plate solar arrays changes constantly, due primarily to changes in cell temperature and irradiance level. As a result, array loads such as dc-to-ac power conditioners must be capable of accommodating widely varying input levels while maintaining operation at or near the maximum power point of the array. The array operating characteristics and extreme output limits necessary for the systematic design of array load interfaces under a wide variety of climatic conditions are studied. A number of interface parameters are examined, including optimum operating voltage, voltage energy, maximum power and current limits, and maximum open circuit voltage. The effect of array degradation and I-V curve fill factor or the array power conditioner interface is also discussed. Results are presented as normalized ratios of power conditioner parameters to array parameters, making the results universally applicable to a wide variety of system sizes, sites, and operating modes.

GAS DISCHARGE SWITCH EVALUATION FOR RHIC BEAM ABORT KICKER APPLICATION.

DOE Office of Scientific and Technical Information (OSTI.GOV)

ZHANG,W.; SANDBERG,J.; SHELDRAKE,R.

2002-06-30

A gas discharge switch EEV HX3002 is being evaluated at Brookhaven National Laboratory as a possible candidate of RHIC Beam Abort Kicker modulator main switch. At higher beam energy and higher beam intensity, the switch stability becomes very crucial. The hollow anode thyratron used in the existing system is not rated for long reverse current conduction. The reverse voltage arcing caused thyratron hold-off voltage de-rating has been the main limitation of the system operation. To improve the system reliability, a new type of gas discharge switch has been suggested by Marconi Applied Technology for its reverse conducting capability.

Gas Composition Sensing Using Carbon Nanotube Arrays

NASA Technical Reports Server (NTRS)

Li, Jing; Meyyappan, Meyya

2012-01-01

This innovation is a lightweight, small sensor for inert gases that consumes a relatively small amount of power and provides measurements that are as accurate as conventional approaches. The sensing approach is based on generating an electrical discharge and measuring the specific gas breakdown voltage associated with each gas present in a sample. An array of carbon nanotubes (CNTs) in a substrate is connected to a variable-pulse voltage source. The CNT tips are spaced appropriately from the second electrode maintained at a constant voltage. A sequence of voltage pulses is applied and a pulse discharge breakdown threshold voltage is estimated for one or more gas components, from an analysis of the current-voltage characteristics. Each estimated pulse discharge breakdown threshold voltage is compared with known threshold voltages for candidate gas components to estimate whether at least one candidate gas component is present in the gas. The procedure can be repeated at higher pulse voltages to estimate a pulse discharge breakdown threshold voltage for a second component present in the gas. The CNTs in the gas sensor have a sharp (low radius of curvature) tip; they are preferably multi-wall carbon nanotubes (MWCNTs) or carbon nanofibers (CNFs), to generate high-strength electrical fields adjacent to the tips for breakdown of the gas components with lower voltage application and generation of high current. The sensor system can provide a high-sensitivity, low-power-consumption tool that is very specific for identification of one or more gas components. The sensor can be multiplexed to measure current from multiple CNT arrays for simultaneous detection of several gas components.

Effects of anode material on arcjet performance

NASA Technical Reports Server (NTRS)

Sankovic, John M.; Curran, Frank M.; Larson, C. A.

1992-01-01

Anodes fabricated from four different materials were tested in a modular arcjet thruster at 1 kW power level on nitrogen/hydrogen mixtures. A two-percent thoriated tungsten anode served as the control. Graphite was chosen for its ease in fabrication, but experienced severe erosion in the constrictor and diverging side. Hafnium carbide and lanthanum hexaboride were chosen for their low work functions but failed due to thermal stress and reacted with the propellant. When compared to the thoriated tungsten nozzle, thruster performance was significantly lower for the lanthanum hexaboride insert and the graphite nozzle, but was slightly higher for the hafnium carbide nozzle. Both the lanthanum hexaboride and hafnium carbide nozzle operated at higher voltages. An attempt was made to duplicate higher performance hafnium carbide results, but repeated attempts at machining a second anode insert were unsuccessful. Graphite, hafnium carbide, and lanthanum hexaboride do not appear viable anode materials for low power arcjet thrusters.

Nitrided SrTiO3 as charge-trapping layer for nonvolatile memory applications

NASA Astrophysics Data System (ADS)

Huang, X. D.; Lai, P. T.; Liu, L.; Xu, J. P.

2011-06-01

Charge-trapping characteristics of SrTiO3 with and without nitrogen incorporation were investigated based on Al/Al2O3/SrTiO3/SiO2/Si (MONOS) capacitors. A Ti-silicate interlayer at the SrTiO3/SiO2 interface was confirmed by x-ray photoelectron spectroscopy and transmission electron microscopy. Compared with the MONOS capacitor with SrTiO3 as charge-trapping layer (CTL), the one with nitrided SrTiO3 showed a larger memory window (8.4 V at ±10 V sweeping voltage), higher P/E speeds (1.8 V at 1 ms +8 V) and better retention properties (charge loss of 38% after 104 s), due to the nitrided SrTiO3 film exhibiting higher dielectric constant, higher deep-level traps induced by nitrogen incorporation, and suppressed formation of Ti silicate between the CTL and SiO2 by nitrogen passivation.

THERMOCOUPLE VACUUM GAUGE

DOEpatents

Price, G.W.

1954-08-01

A protector device is described for use in controlling the pressure within a cyclotron. In particular, an electrical circuit functions to actuate a vacuum pump when a predetermined low pressure is reached and disconnect the pump when the pressure increases abcve a certain value. The principal feature of the control circuit lies in the use of a voltage divider network at the input to a relay control tube comprising two parallel, adjustable resistances wherein one resistor is switched into the circuit when the relay connects the pump to a power source. With this arrangement the relay is energized at one input level received from a sensing element within the cyclotron chamber and is de-energized when a second input level, representing the higher pressure limit, is reached.

Voltage-step pulsed electromembrane as a novel view of electrical field-induced liquid-phase microextraction.

PubMed

Rezazadeh, Maryam; Yamini, Yadollah; Seidi, Shahram; Arjomandi-Behzad, Leila

2014-01-10

In the present work, the effect of application of voltage steps on extraction efficiency of pulsed electromembrane extraction (PEME) was investigated for the first time. The effects of voltage variations including initial and final voltages, number of steps between the initial and final voltages as well as their time durations were studied on the extraction efficiencies of three different classes of analytes. These classes include amitriptyline (AMI) and nortriptyline (NOR) as more hydrophobic analytes, diclofenac (DIC) and mefenamic acid (MEF) as acidic drugs and salbutamol (SB) and terbutaline (TB) as hydrophilic compounds. It was anticipated that the application of high voltages is not necessary at the beginning of the extraction, since large amounts of target analytes exist around the supported liquid membrane (SLM)/sample solution interface. So, they could be easily transferred into the acceptor phase utilizing lower voltages. Results showed that the benefits of voltage-step PEME (VS-PEME) are more obvious in systems with low electrical resistance (regarding the SLM composition). Efficiencies of VS-PEME for extraction of AMI and NOR (96% and 89% for AMI and NOR, respectively) were comparable with those achieved from applying a constant voltage (95% for AMI and 83% for NOR). However, recoveries from the VS-PEME of DIC and MEF (53% and 44% for DIC and MEF, respectively) were significantly higher than those from the application of a constant voltage (33% for DIC and 31% for MEF). Also, recoveries obtained from the VS-PEME for SB and TB were approximately 3 orders of magnitude greater than those from a constant voltage. Moreover, it was demonstrated that in all cases analytes could effectively be extracted at the beginning of extraction by applying low voltages. Copyright © 2013 Elsevier B.V. All rights reserved.

Bias-Voltage Stabilizer for HVHF Amplifiers in VHF Pulse-Echo Measurement Systems

PubMed Central

Choi, Hojong; Park, Chulwoo; Kim, Jungsuk; Jung, Hayong

2017-01-01

The impact of high-voltage–high-frequency (HVHF) amplifiers on echo-signal quality is greater with very-high-frequency (VHF, ≥100 MHz) ultrasound transducers than with low-frequency (LF, ≤15 MHz) ultrasound transducers. Hence, the bias voltage of an HVHF amplifier must be stabilized to ensure stable echo-signal amplitudes. We propose a bias-voltage stabilizer circuit to maintain stable DC voltages over a wide input range, thus reducing the harmonic-distortion components of the echo signals in VHF pulse-echo measurement systems. To confirm the feasibility of the bias-voltage stabilizer, we measured and compared the deviations in the gain of the HVHF amplifier with and without a bias-voltage stabilizer. Between −13 and 26 dBm, the measured gain deviations of a HVHF amplifier with a bias-voltage stabilizer are less than that of an amplifier without a bias-voltage stabilizer. In order to confirm the feasibility of the bias-voltage stabilizer, we compared the pulse-echo responses of the amplifiers, which are typically used for the evaluation of transducers or electronic components used in pulse-echo measurement systems. From the responses, we observed that the amplitudes of the echo signals of a VHF transducer triggered by the HVHF amplifier with a bias-voltage stabilizer were higher than those of the transducer triggered by the HVHF amplifier alone. The second, third, and fourth harmonic-distortion components of the HVHF amplifier with the bias-voltage stabilizer were also lower than those of the HVHF amplifier alone. Hence, the proposed scheme is a promising method for stabilizing the bias voltage of an HVHF amplifier, and improving the echo-signal quality of VHF transducers. PMID:29065526

Point mutation of a conserved aspartate, D69, in the muscarinic M2 receptor does not modify voltage-sensitive agonist potency.

PubMed

Ågren, Richard; Sahlholm, Kristoffer; Nilsson, Johanna; Århem, Peter

2018-01-29

The muscarinic M 2 receptor (M 2 R) has been shown to display voltage-sensitive agonist binding, based on G protein-activated inward rectifier potassium channel (GIRK) opening and radioligand binding at different membrane voltages. A conserved aspartate in transmembrane segment (TM) II of M 2 R, D69, has been proposed as the voltage sensor. While a recent paper instead presented evidence of tyrosines in TMs III, VI, and VII acting as voltage sensors, these authors were not able to record GIRK channel activation by a D69N mutant M 2 R. In the present study, we succeeded in recording ACh-induced GIRK channel activation by this mutant at -80 and 0 mV. The acetylcholine EC 50 was about 2.5-fold higher at 0 mV, a potency shift very similar to that observed at wild-type M 2 R, indicating that voltage sensitivity persists at the D69N mutant. Thus, our present observations corroborate the notion that D69 is not responsible for voltage sensitivity of the M 2 R. Copyright © 2018 Elsevier Inc. All rights reserved.

Statistical Evaluation of Voltage Variation of Power Distribution System with Clustered Home-Cogeneration Systems

NASA Astrophysics Data System (ADS)

Kato, Takeyoshi; Minagata, Atsushi; Suzuoki, Yasuo

This paper discusses the influence of mass installation of a home co-generation system (H-CGS) using a polymer electrolyte fuel cell (PEFC) on the voltage profile of power distribution system in residential area. The influence of H-CGS is compared with that of photovoltaic power generation systems (PV systems). The operation pattern of H-CGS is assumed based on the electricity and hot-water demand observed in 10 households for a year. The main results are as follows. With the clustered H-CGS, the voltage of each bus is higher by about 1-3% compared with the conventional system without any distributed generators. Because H-CGS tends to increase the output during the early evening, H-CGS contributes to recover the voltage drop during the early evening, resulting in smaller voltage variation of distribution system throughout a day. Because of small rated power output about 1kW, the influence on voltage profile by the clustered H-CGS is smaller than that by the clustered PV systems. The highest voltage during the day time is not so high as compared with the distribution system with the clustered PV systems, even if the reverse power flow from H-CGS is allowed.

Improved High/Low Junction Silicon Solar Cell

NASA Technical Reports Server (NTRS)

Neugroschel, A.; Pao, S. C.; Lindholm, F. A.; Fossum, J. G.

1986-01-01

Method developed to raise value of open-circuit voltage in silicon solar cells by incorporating high/low junction in cell emitter. Power-conversion efficiency of low-resistivity silicon solar cell considerably less than maximum theoretical value mainly because open-circuit voltage is smaller than simple p/n junction theory predicts. With this method, air-mass-zero opencircuit voltage increased from 600 mV level to approximately 650 mV.

Bivariate quadratic method in quantifying the differential capacitance and energy capacity of supercapacitors under high current operation

NASA Astrophysics Data System (ADS)

Goh, Chin-Teng; Cruden, Andrew

2014-11-01

Capacitance and resistance are the fundamental electrical parameters used to evaluate the electrical characteristics of a supercapacitor, namely the dynamic voltage response, energy capacity, state of charge and health condition. In the British Standards EN62391 and EN62576, the constant capacitance method can be further improved with a differential capacitance that more accurately describes the dynamic voltage response of supercapacitors. This paper presents a novel bivariate quadratic based method to model the dynamic voltage response of supercapacitors under high current charge-discharge cycling, and to enable the derivation of the differential capacitance and energy capacity directly from terminal measurements, i.e. voltage and current, rather than from multiple pulsed-current or excitation signal tests across different bias levels. The estimation results the author achieves are in close agreement with experimental measurements, within a relative error of 0.2%, at various high current levels (25-200 A), more accurate than the constant capacitance method (4-7%). The archival value of this paper is the introduction of an improved quantification method for the electrical characteristics of supercapacitors, and the disclosure of the distinct properties of supercapacitors: the nonlinear capacitance-voltage characteristic, capacitance variation between charging and discharging, and distribution of energy capacity across the operating voltage window.

Sequential power-up circuit

DOEpatents

Kronberg, J.W.

1992-06-02

A sequential power-up circuit for starting several electrical load elements in series to avoid excessive current surge, comprising a voltage ramp generator and a set of voltage comparators, each comparator having a different reference voltage and interfacing with a switch that is capable of turning on one of the load elements. As the voltage rises, it passes the reference voltages one at a time and causes the switch corresponding to that voltage to turn on its load element. The ramp is turned on and off by a single switch or by a logic-level electrical signal. The ramp rate for turning on the load element is relatively slow and the rate for turning the elements off is relatively fast. Optionally, the duration of each interval of time between the turning on of the load elements is programmable. 2 figs.

Increased voltage photovoltaic cell

NASA Technical Reports Server (NTRS)

Ross, B.; Bickler, D. B.; Gallagher, B. D. (Inventor)

1985-01-01

A photovoltaic cell, such as a solar cell, is provided which has a higher output voltage than prior cells. The improved cell includes a substrate of doped silicon, a first layer of silicon disposed on the substrate and having opposite doping, and a second layer of silicon carbide disposed on the first layer. The silicon carbide preferably has the same type of doping as the first layer.

Upgrade of the TITAN EBIT High Voltage Operation

NASA Astrophysics Data System (ADS)

Foster, Matt; Titan Collaboration

2016-09-01

TRIUMF's Ion Trap for Atomic and Nuclear science (TITAN) is a setup dedicated to highly precise mass measurements of short-lived isotopes down to 10ms. TITAN's Electron Beam Ion Trap (EBIT) is a charge breeder integrated into the setup to perform in-trap decay spectroscopy of highly charged ions and increase the precision of mass measurements. In its previous configuration TITAN's EBIT could not fulfil its maximum design specification due to high voltage safety restrictions, limiting its obtainable charge states. A recently completed upgrade of the high voltage operation that will allow the EBIT to fulfil its design specification and achieve higher charge states for heavier species is undergoing preliminary tests with stable beam. Simulations were performed to optimise the injection and extraction efficiency at high voltage and initial tests have involved using a Ge detector to identify x-rays produced by charge breeding stable ions. Future work comprises exploring electron capture rates of Ne-, He- and H-like charge states of 64Cu and higher masses, which were not previously accessible. The function of the EBIT within the TITAN setup, the work carried out on the upgrade thus far and its scope for future work will be presented.

Guanidinium: A Route to Enhanced Carrier Lifetime and Open-Circuit Voltage in Hybrid Perovskite Solar Cells.

PubMed

De Marco, Nicholas; Zhou, Huanping; Chen, Qi; Sun, Pengyu; Liu, Zonghao; Meng, Lei; Yao, En-Ping; Liu, Yongsheng; Schiffer, Andy; Yang, Yang

2016-02-10

Hybrid perovskites have shown astonishing power conversion efficiencies owed to their remarkable absorber characteristics including long carrier lifetimes, and a relatively substantial defect tolerance for solution-processed polycrystalline films. However, nonradiative charge carrier recombination at grain boundaries limits open circuit voltages and consequent performance improvements of perovskite solar cells. Here we address such recombination pathways and demonstrate a passivation effect through guanidinium-based additives to achieve extraordinarily enhanced carrier lifetimes and higher obtainable open circuit voltages. Time-resolved photoluminescence measurements yield carrier lifetimes in guanidinium-based films an order of magnitude greater than pure-methylammonium counterparts, giving rise to higher device open circuit voltages and power conversion efficiencies exceeding 17%. A reduction in defect activation energy of over 30% calculated via admittance spectroscopy and confocal fluorescence intensity mapping indicates successful passivation of recombination/trap centers at grain boundaries. We speculate that guanidinium ions serve to suppress formation of iodide vacancies and passivate under-coordinated iodine species at grain boundaries and within the bulk through their hydrogen bonding capability. These results present a simple method for suppressing nonradiative carrier loss in hybrid perovskites to further improve performances toward highly efficient solar cells.

New Analysis and Design of a RF Rectifier for RFID and Implantable Devices

PubMed Central

Liu, Dong-Sheng; Li, Feng-Bo; Zou, Xue-Cheng; Liu, Yao; Hui, Xue-Mei; Tao, Xiong-Fei

2011-01-01

New design and optimization of charge pump rectifiers using diode-connected MOS transistors is presented in this paper. An analysis of the output voltage and Power Conversion Efficiency (PCE) is given to guide and evaluate the new design. A novel diode-connected MOS transistor for UHF rectifiers is presented and optimized, and a high efficiency N-stage charge pump rectifier based on this new diode-connected MOS transistor is designed and fabricated in a SMIC 0.18-μm 2P3M CMOS embedded EEPROM process. The new diode achieves 315 mV turn-on voltage and 415 nA reverse saturation leakage current. Compared with the traditional rectifier, the one based on the proposed diode-connected MOS has higher PCE, higher output voltage and smaller ripple coefficient. When the RF input is a 900-MHz sinusoid signal with the power ranging from −15 dBm to −4 dBm, PCEs of the charge pump rectifier with only 3-stage are more than 30%, and the maximum output voltage is 5.5 V, and its ripple coefficients are less than 1%. Therefore, the rectifier is especially suitableto passive UHF RFID tag IC and implantable devices. PMID:22163968

New analysis and design of a RF rectifier for RFID and implantable devices.

PubMed

Liu, Dong-Sheng; Li, Feng-Bo; Zou, Xue-Cheng; Liu, Yao; Hui, Xue-Mei; Tao, Xiong-Fei

2011-01-01

New design and optimization of charge pump rectifiers using diode-connected MOS transistors is presented in this paper. An analysis of the output voltage and Power Conversion Efficiency (PCE) is given to guide and evaluate the new design. A novel diode-connected MOS transistor for UHF rectifiers is presented and optimized, and a high efficiency N-stage charge pump rectifier based on this new diode-connected MOS transistor is designed and fabricated in a SMIC 0.18-μm 2P3M CMOS embedded EEPROM process. The new diode achieves 315 mV turn-on voltage and 415 nA reverse saturation leakage current. Compared with the traditional rectifier, the one based on the proposed diode-connected MOS has higher PCE, higher output voltage and smaller ripple coefficient. When the RF input is a 900-MHz sinusoid signal with the power ranging from -15 dBm to -4 dBm, PCEs of the charge pump rectifier with only 3-stage are more than 30%, and the maximum output voltage is 5.5 V, and its ripple coefficients are less than 1%. Therefore, the rectifier is especially suitable to passive UHF RFID tag IC and implantable devices.

Some device implications of voltage controlled magnetic anisotropy in Co/Gd2O3 thin films through REDOX chemistry

NASA Astrophysics Data System (ADS)

Hao, Guanhua; Noviasky, Nicholas; Cao, Shi; Sabirianov, Ildar; Yin, Yuewei; Ilie, Carolina C.; Kirianov, Eugene; Sharma, Nishtha; Sokolov, Andrei; Marshall, Andrew; Xu, Xiaoshan; Dowben, Peter A.

2018-04-01

The effect of intermediate interfacial oxidation on the in-plane magnetization of multilayer stack Pt/Co/Gd2O3, on a p-type silicon substrate, has been investigated by magneto-optical Kerr effect (MOKE) measurements, the anomalous Hall effect, and magnetoresistance measurements. While voltage controlled perpendicular magnetic anisotropy of a metal/oxide heterostructure is known, this heterostructure displays an inverse relationship between voltage and coercivity. The anomalous Hall effect demonstrates a significant change in hysteresis, with the applied bias sign. There is a higher perpendicular magnetic anisotropy with positive bias exposure.

Analog parameters of solid source Zn diffusion In X Ga1-X As nTFETs down to 10 K

NASA Astrophysics Data System (ADS)

Bordallo, C.; Martino, J. A.; Agopian, P. G. D.; Alian, A.; Mols, Y.; Rooyackers, R.; Vandooren, A.; Verhulst, A. S.; Smets, Q.; Simoen, E.; Claeys, C.; Collaert, N.

2016-12-01

The analog parameters of In0.53Ga0.47As and In0.7Ga0.3As nTFETs with solid state Zn diffused source are investigated from room temperature down to 10 K. The In0.7Ga0.3As devices are shown to yield a higher on-state current than the In0.53Ga0.47As counterparts, and, consequently, a higher transconductance due to the lower bandgap. At the same time, the In0.7Ga0.3As devices present higher output conductance values. The balance between these two factors results in a higher intrinsic voltage gain (A V) for In0.7Ga0.3As nTFETs at low gate bias and similar A V for both devices at high gate voltage. The transconductance is reduced at low temperature due to the increase of the bandgap, while the output conductance is decreased (improved) upon cooling, which is related to the reduction of the drain dependence of the BTBT generation rate. The temperature influence is more pronounced in the output conductance than in the transconductance, resulting in an increase of the intrinsic voltage gain at low temperatures for both devices and bias.

Voltage controlled oscillator is easily aligned, has low phase noise

NASA Technical Reports Server (NTRS)

Sydnor, R. L.

1965-01-01

Voltage Controlled Oscillator /VCO/, represented by an equivalent RF circuit, is easily adjusted for optimum performance by varying the circuit parameter. It contains a crystal drive level which is also easily adjusted to obtain minimum phase noise.

Electronic circuit provides accurate sensing and control of dc voltage

NASA Technical Reports Server (NTRS)

Loftus, W. D.

1966-01-01

Electronic circuit used relay coil to sense and control dc voltage. The control relay is driven by a switching transistor that is biased to cutoff for all input up to slightly less than the threshold level.

Differential contribution of Kv4-containing channels to A-type, voltage-gated potassium currents in somatic and visceral dorsal root ganglion neurons.

PubMed

Yunoki, Takakazu; Takimoto, Koichi; Kita, Kaori; Funahashi, Yasuhito; Takahashi, Ryosuke; Matsuyoshi, Hiroko; Naito, Seiji; Yoshimura, Naoki

2014-11-15

Little is known about electrophysiological differences of A-type transient K(+) (KA) currents in nociceptive afferent neurons that innervate somatic and visceral tissues. Staining with isolectin B4 (IB4)-FITC classifies L6-S1 dorsal root ganglion (DRG) neurons into three populations with distinct staining intensities: negative to weak, moderate, and intense fluorescence signals. All IB4 intensely stained cells are negative for a fluorescent dye, Fast Blue (FB), injected into the bladder wall, whereas a fraction of somatic neurons labeled by FB, injected to the external urethral dermis, is intensely stained with IB4. In whole-cell, patch-clamp recordings, phrixotoxin 2 (PaTx2), a voltage-gated K(+) (Kv)4 channel blocker, exhibits voltage-independent inhibition of the KA current in IB4 intensely stained cells but not the one in bladder-innervating cells. The toxin also shows voltage-independent inhibition of heterologously expressed Kv4.1 current, whereas its inhibition of Kv4.2 and Kv4.3 currents is voltage dependent. The swapping of four amino acids at the carboxyl portion of the S3 region between Kv4.1 and Kv4.2 transfers this characteristic. RT-PCRs detected Kv4.1 and the long isoform of Kv4.3 mRNAs without significant Kv4.2 mRNA in L6-S1 DRGs. Kv4.1 and Kv4.3 mRNA levels were higher in laser-captured, IB4-stained neurons than in bladder afferent neurons. These results indicate that PaTx2 acts differently on channels in the Kv4 family and that Kv4.1 and possibly Kv4.3 subunits functionally participate in the formation of KA channels in a subpopulation of somatic C-fiber neurons but not in visceral C-fiber neurons innervating the bladder. Copyright © 2014 the American Physiological Society.

Differential contribution of Kv4-containing channels to A-type, voltage-gated potassium currents in somatic and visceral dorsal root ganglion neurons

PubMed Central

Yunoki, Takakazu; Takimoto, Koichi; Kita, Kaori; Funahashi, Yasuhito; Takahashi, Ryosuke; Matsuyoshi, Hiroko; Naito, Seiji

2014-01-01

Little is known about electrophysiological differences of A-type transient K+ (KA) currents in nociceptive afferent neurons that innervate somatic and visceral tissues. Staining with isolectin B4 (IB4)-FITC classifies L6-S1 dorsal root ganglion (DRG) neurons into three populations with distinct staining intensities: negative to weak, moderate, and intense fluorescence signals. All IB4 intensely stained cells are negative for a fluorescent dye, Fast Blue (FB), injected into the bladder wall, whereas a fraction of somatic neurons labeled by FB, injected to the external urethral dermis, is intensely stained with IB4. In whole-cell, patch-clamp recordings, phrixotoxin 2 (PaTx2), a voltage-gated K+ (Kv)4 channel blocker, exhibits voltage-independent inhibition of the KA current in IB4 intensely stained cells but not the one in bladder-innervating cells. The toxin also shows voltage-independent inhibition of heterologously expressed Kv4.1 current, whereas its inhibition of Kv4.2 and Kv4.3 currents is voltage dependent. The swapping of four amino acids at the carboxyl portion of the S3 region between Kv4.1 and Kv4.2 transfers this characteristic. RT-PCRs detected Kv4.1 and the long isoform of Kv4.3 mRNAs without significant Kv4.2 mRNA in L6-S1 DRGs. Kv4.1 and Kv4.3 mRNA levels were higher in laser-captured, IB4-stained neurons than in bladder afferent neurons. These results indicate that PaTx2 acts differently on channels in the Kv4 family and that Kv4.1 and possibly Kv4.3 subunits functionally participate in the formation of KA channels in a subpopulation of somatic C-fiber neurons but not in visceral C-fiber neurons innervating the bladder. PMID:25143545

Evaluation of nickel-hydrogen battery for space application

NASA Technical Reports Server (NTRS)

Billard, J. M.; Dupont, D.

1983-01-01

Results of electrical space qualification tests of nickel-hydrogen battery type HR 23S are presented. The results obtained for the nickel-cadmium battery type VO 23S are similar except that the voltage level and the charge conservation characteristics vary significantly. The electrical and thermal characteristics permit predictions of the following optimal applications: charge coefficient in the order of 1.3 to 1.4 at 20C; charge current density higher than C/10 at 20C; discharge current density from C/10 to C/3 at 20C; maximum discharge temperature: OC; storage temperature: -20C.

Radiation Dose Testing on Juno High Voltage Cables

NASA Technical Reports Server (NTRS)

Green, Nelson W.; Kirkham, Harold; Kim, Wousik; McAlpine, Bill

2008-01-01

The Juno mission to Jupiter will have a highly elliptical orbit taking the spacecraft through the radiation belts surrounding the planet. During these passes through the radiation belts, the spacecraft will be subject to high doses of radiation from energetic electrons and protons with energies ranging from 10 keV to 1 GeV. While shielding within the spacecraft main body will reduce the total absorbed dose to much of the spacecraft electronics, instruments and cables on the outside of the spacecraft will receive much higher levels of absorbed dose. In order to estimate the amount of degradation to two such cables, testing has been performed on two coaxial cables intended to provide high voltages to three of the instruments on Juno. Both cables were placed in a vacuum of 5x10(exp -6) torr and cooled to -50(deg)C prior to exposure to the radiation sources. Measurements of the coaxial capacitance per unit length and partial discharge noise floor indicate that increasing levels of radiation make measurable but acceptably small changes to the F EP Teflon utilized in the construction of these cables. In addition to the radiation dose testing, observations were made on the internal electrostatic charging characteristics of these cables and multiple discharges were recorded.

Radiation Dose Testing on Juno High Voltage Cables

NASA Technical Reports Server (NTRS)

Green, Nelson W.; Kirkham, Harold; Kim, Wousik; McAlpine, Bill

2008-01-01

The Juno mission to Jupiter will have a highly elliptical orbit taking the spacecraft through the radiation belts surrounding the planet. During these passes through the radiation belts, the spacecraft will be subject to high doses of radiation from energetic electrons and protons with energies ranging from 10 keV to 1 GeV. While shielding within the spacecraft main body will reduce the total absorbed dose to much of the spacecraft electronics, instruments and cables on the outside of the spacecraft will receive much higher levels of absorbed dose. In order to estimate the amount of degradation to two such cables, testing has been performed on two coaxial cables intended to provide high voltages to three of the instruments on Juno. Both cables were placed in a vacuum of 5x10-6 torr and cooled to -50 C prior to exposure to the radiation sources. Measurements of the coaxial capacitance per unit length and partial discharge noise floor indicate that increasing levels of radiation make measurable but acceptably small changes to the F EP Teflon utilized in the construction of these cables. In addition to the radiation dose testing, observations were made on the internal electrostatic charging characteristics of these cables and multiple discharges were recorded.

Bias-field controlled phasing and power combination of gyromagnetic nonlinear transmission lines

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reale, D. V., E-mail: david.reale@ttu.edu; Bragg, J.-W. B.; Gonsalves, N. R.

2014-05-15

Gyromagnetic Nonlinear Transmission Lines (NLTLs) generate microwaves through the damped gyromagnetic precession of the magnetic moments in ferrimagnetic material, and are thus utilized as compact, solid-state, frequency agile, high power microwave (HPM) sources. The output frequency of a NLTL can be adjusted by control of the externally applied bias field and incident voltage pulse without physical alteration to the structure of the device. This property provides a frequency tuning capability not seen in many conventional e-beam based HPM sources. The NLTLs developed and tested are mesoband sources capable of generating MW power levels in the L, S, and C bandsmore » of the microwave spectrum. For an individual NLTL the output power at a given frequency is determined by several factors including the intrinsic properties of the ferrimagnetic material and the transmission line structure. Hence, if higher power levels are to be achieved, it is necessary to combine the outputs of multiple NLTLs. This can be accomplished in free space using antennas or in a transmission line via a power combiner. Using a bias-field controlled delay, a transient, high voltage, coaxial, three port, power combiner was designed and tested. Experimental results are compared with the results of a transient COMSOL simulation to evaluate combiner performance.« less

Featuring of transient tunneling current by voltage pulse and application to an electrochemical biosensor

NASA Astrophysics Data System (ADS)

Yun, Jun Yeon; Lee, Won Cheol; Choi, Seong Wook; Park, Young June

2018-03-01

We suggest a voltage pulse method for detecting the transient tunneling current component (faradaic current component) in a metal/redox-active monolayer/electrolyte system. After applying the pulse to the metal electrode, the capacitive current prevails; therefore, it is difficult to extract the tunneling current, which carries information on the biochemical reactions occurring between the biomarkers in the electrolyte and the self-assembled monolayer (SAM) as the probe peptide system. Instead of waiting until the capacitive current diminishes, and thereby, the tunneling current also decreases, we try to extract the tunneling current in an early stage of the pulse. The method is based on the observation that the capacitive current becomes symmetrized in the positive and negative pulses after introducing the SAM on the metal electrode. When the energy level of the redox molecule is higher than the Fermi level of the metal under zero-bias condition, the tunneling current in the negative pulse can be extracted by subtracting the capacitive current obtained from the positive pulse, where the tunneling current is neglected. The experiment conducted for detecting trypsin as a biomarker shows that the method enhances the sensitivity and the specific-to-nonspecific ratio of the sensor device in the case of the nonspecific protein-abundant electrolyte solution, as evinced by cyclic voltammetry measurements in comparison.

Bias-field controlled phasing and power combination of gyromagnetic nonlinear transmission lines.

PubMed

Reale, D V; Bragg, J-W B; Gonsalves, N R; Johnson, J M; Neuber, A A; Dickens, J C; Mankowski, J J

2014-05-01

Gyromagnetic Nonlinear Transmission Lines (NLTLs) generate microwaves through the damped gyromagnetic precession of the magnetic moments in ferrimagnetic material, and are thus utilized as compact, solid-state, frequency agile, high power microwave (HPM) sources. The output frequency of a NLTL can be adjusted by control of the externally applied bias field and incident voltage pulse without physical alteration to the structure of the device. This property provides a frequency tuning capability not seen in many conventional e-beam based HPM sources. The NLTLs developed and tested are mesoband sources capable of generating MW power levels in the L, S, and C bands of the microwave spectrum. For an individual NLTL the output power at a given frequency is determined by several factors including the intrinsic properties of the ferrimagnetic material and the transmission line structure. Hence, if higher power levels are to be achieved, it is necessary to combine the outputs of multiple NLTLs. This can be accomplished in free space using antennas or in a transmission line via a power combiner. Using a bias-field controlled delay, a transient, high voltage, coaxial, three port, power combiner was designed and tested. Experimental results are compared with the results of a transient COMSOL simulation to evaluate combiner performance.

The characteristics and limitations of the MPS/MMS battery charging system

NASA Technical Reports Server (NTRS)

Ford, F. E.; Palandati, C. F.; Davis, J. F.; Tasevoli, C. M.

1980-01-01

A series of tests was conducted on two 12 ampere hour nickel cadmium batteries under a simulated cycle regime using the multiple voltage versus temperature levels designed into the modular power system (MPS). These tests included: battery recharge as a function of voltage control level; temperature imbalance between two parallel batteries; a shorted or partially shorted cell in one of the two parallel batteries; impedance imbalance of one of the parallel battery circuits; and disabling and enabling one of the batteries from the bus at various charge and discharge states. The results demonstrate that the eight commandable voltage versus temperature levels designed into the MPS provide a very flexible system that not only can accommodate a wide range of normal power system operation, but also provides a high degree of flexibility in responding to abnormal operating conditions.

Improved performance of the microbial electrolysis desalination and chemical-production cell with enlarged anode and high applied voltages.

PubMed

Ye, Bo; Luo, Haiping; Lu, Yaobin; Liu, Guangli; Zhang, Renduo; Li, Xiao

2017-11-01

The aim of this study was to improve performance of the microbial electrolysis desalination and chemical-production cell (MEDCC) using enlarged anode and high applied voltages. MEDCCs with anode lengths of 9 and 48cm (i.e., the 9cm-anode MEDCC and 48cm-anode MEDCC, respectively) were tested under different voltages (1.2-3.0V). Our results demonstrated for the first time that the MEDCC could maintain high performance even under the applied voltage higher than that for water dissociation (i.e., 1.8V). Under the applied voltage of 2.5V, the maximum current density in the 48cm-anode MEDCC reached 32.8±2.6A/m 2 , which is one of the highest current densities reported so far in the bioelectrochemical system (BES). The relative abundance of Geobacter was changed along the anode length. Our results show the great potential of the BES with enlarged anode and high applied voltages. Copyright © 2017 Elsevier Ltd. All rights reserved.

The effects of ion gun beam voltage on the electrical characteristics of NbCN/PbBi edge junctions

NASA Technical Reports Server (NTRS)

Lichtenberger, A. W.; Feldman, M. J.; Mattauch, R. J.; Cukauskas, E. J.

1989-01-01

The authors have succeeded in fabricating high-quality submicron NbCN edge junctions using a technique which is commonly used to make Nb edge junctions. A modified commercial ion gun was used to cut an edge in SiO2/NbCN films partially covered with photoresist. An insulating barrier was then formed on the exposed edge by reactive ion beam oxidation, and a counterelectrode of PbBi was deposited. The electrical quality of the resulting junctions was found to be strongly influenced by the ion beam acceleration voltages used to cut the edge and to oxidize it. For low ion beam voltages, the junction quality parameter was as high as Vm = 55 mV (measured at 3 mV), but higher ion beam voltages yielded strikingly poorer quality junctions. In light of the small coherence length of NbN, the dependence of the electrical characteristics on ion beam voltage is presumably due to mechanical damage of the NbCN surface. In contrast, for similar ion beam voltages, no such dependence was found for Nb edge junctions.

Low power arcjet thruster pulse ignition

NASA Technical Reports Server (NTRS)

Sarmiento, Charles J.; Gruber, Robert P.

1987-01-01

An investigation of the pulse ignition characteristics of a 1 kW class arcjet using an inductive energy storage pulse generator with a pulse width modulated power converter identified several thruster and pulse generator parameters that influence breakdown voltage including pulse generator rate of voltage rise. This work was conducted with an arcjet tested on hydrogen-nitrogen gas mixtures to simulate fully decomposed hydrazine. Over all ranges of thruster and pulser parameters investigated, the mean breakdown voltages varied from 1.4 to 2.7 kV. Ignition tests at elevated thruster temperatures under certain conditions revealed occasional breakdowns to thruster voltages higher than the power converter output voltage. These post breakdown discharges sometimes failed to transition to the lower voltage arc discharge mode and the thruster would not ignite. Under the same conditions, a transition to the arc mode would occur for a subsequent pulse and the thruster would ignite. An automated 11 600 cycle starting and transition to steady state test demonstrated ignition on the first pulse and required application of a second pulse only two times to initiate breakdown.

Calculation of voltages in electric power transmission lines during historic geomagnetic storms: An investigation using realistic earth impedances

USGS Publications Warehouse

Lucas, Greg M.; Love, Jeffrey J.; Kelbert, Anna

2018-01-01

Commonly, one-dimensional (1-D) Earth impedances have been used to calculate the voltages induced across electric power transmission lines during geomagnetic storms under the assumption that much of the three-dimensional structure of the Earth gets smoothed when integrating along power transmission lines. We calculate the voltage across power transmission lines in the mid-Atlantic region with both regional 1-D impedances and 64 empirical 3-D impedances obtained from a magnetotelluric survey. The use of 3-D impedances produces substantially more spatial variance in the calculated voltages, with the voltages being more than an order of magnitude different, both higher and lower, than the voltages calculated utilizing regional 1-D impedances. During the March 1989 geomagnetic storm 62 transmission lines exceed 100 V when utilizing empirical 3-D impedances, whereas 16 transmission lines exceed 100 V when utilizing regional 1-D impedances. This demonstrates the importance of using realistic impedances to understand and quantify the impact that a geomagnetic storm has on power grids.

Viscoelastic performance of dielectric elastomer subject to different voltage stimulation

NASA Astrophysics Data System (ADS)

Sheng, Junjie; Zhang, Yuqing; Liu, Lei; Li, Bo; Chen, Hualing

2017-04-01

Dielectric elastomer (DE) is capable of giant deformation subject to an electric field, and demonstrates significant advantages in the potentially application of soft machines with muscle-like characteristics. Due to an inherent property of all macromolecular materials, DE exhibits strong viscoelastic properties. Viscoelasticity could cause a time-dependent deformation and lower the response speed and energy conversion efficiency of DE based actuators, thus strongly affect its electromechanical performance and applications. Combining with the rheological model of viscoelastic relaxation, the viscoelastic performance of a VHB membrane in a circular actuator configuration undergoing separately constant, ramp and sinusoidal voltages are analyzed both theoretically and experimentally. The theoretical results indicated that DE could attain a big deformation under a small constant voltage with a longer time or under a big voltage with a shorter time. The model also showed that a higher critical stretch could be achieved by applying ramping voltage with a lower rate and the stretch magnitude under sinusoidal voltage is much larger at a relatively low frequency. Finally, experiments were designed to validate the simulation and show well consistent with the simulation results.

Influence of substrate bias voltage on structure and properties of the CrAlN films deposited by unbalanced magnetron sputtering

NASA Astrophysics Data System (ADS)

Lv, Yanhong; Ji, Li; Liu, Xiaohong; Li, Hongxuan; Zhou, Huidi; Chen, Jianmin

2012-02-01

The CrAlN films were deposited on silicon and stainless steel substrates by unbalanced magnetron sputtering system. The influence of substrate bias on deposition rate, composition, structure, morphology and properties of the CrAlN films was investigated. The results showed that, with the increase of the substrate bias voltage, the deposition rate decreased accompanied by a change of the preferred orientation of the CrAlN film from (2 2 0) to (2 0 0). The grain size and the average surface roughness of the CrAlN films declined as the bias voltage increases above -100 V. The morphology of the films changed from obviously columnar to dense glass-like structure with the increase of the bias voltage from -50 to -250 V. Meanwhile, the films deposited at moderate bias voltage had better mechanical and tribological properties, while the films deposited at higher bias voltage showed better corrosion resistance. It was found that the corrosion resistance improvement was not only attributed to the low pinhole density of the film, but also to chemical composition of films.

Origin of large dark current increase in InGaAs/InP avalanche photodiode

NASA Astrophysics Data System (ADS)

Wen, J.; Wang, W. J.; Chen, X. R.; Li, N.; Chen, X. S.; Lu, W.

2018-04-01

The large dark current increase near the breakdown voltage of an InGaAs/InP avalanche photodiode is observed and analyzed from the aspect of bulk defects in the device materials. The trap level information is extracted from the temperature-dependent electrical characteristics of the device and the low temperature photoluminescence spectrum of the materials. Simulation results with the extracted trap level taken into consideration show that the trap is in the InP multiplication layer and the trap assisted tunneling current induced by the trap is the main cause of the large dark current increase with the bias from the punch-through voltage to 95% breakdown voltage.

Solar bus regulator and battery charger for IMP's H, I, and J

NASA Technical Reports Server (NTRS)

Paulkovich, J.

1972-01-01

Interplanetary Monitoring Probe (IMP) spacecrafts H, I, and J utilize a direct energy transfer (DET) type of power system operating from a solar array source. A shunt type of regulator prevents the bus voltage from exceeding a preset voltage level. The power system utilizes a single differential amplifier with dual outputs to control the battery charge/shunt regulator and the discharge regulator. A two-voltage level, current limited, series charger and a current sensor control battery state of charge of the silver-cadmium battery pack. Premature termination of the battery charge is prevented by a power available gate that also initiates charge current to the battery upon availability of excess power.

SAMPLING OSCILLOSCOPE

DOEpatents

Sugarman, R.M.

1960-08-30

An oscilloscope is designed for displaying transient signal waveforms having random time and amplitude distributions. The oscilloscopc is a sampling device that selects for display a portion of only those waveforms having a particular range of amplitudes. For this purpose a pulse-height analyzer is provided to screen the pulses. A variable voltage-level shifter and a time-scale rampvoltage generator take the pulse height relative to the start of the waveform. The variable voltage shifter produces a voltage level raised one step for each sequential signal waveform to be sampled and this results in an unsmeared record of input signal waveforms. Appropriate delay devices permit each sample waveform to pass its peak amplitude before the circuit selects it for display.

Self-calibrating multiplexer circuit

DOEpatents

Wahl, Chris P.

1997-01-01

A time domain multiplexer system with automatic determination of acceptable multiplexer output limits, error determination, or correction is comprised of a time domain multiplexer, a computer, a constant current source capable of at least three distinct current levels, and two series resistances employed for calibration and testing. A two point linear calibration curve defining acceptable multiplexer voltage limits may be defined by the computer by determining the voltage output of the multiplexer to very accurately known input signals developed from predetermined current levels across the series resistances. Drift in the multiplexer may be detected by the computer when the output voltage limits, expected during normal operation, are exceeded, or the relationship defined by the calibration curve is invalidated.

Insulation Requirements of High-Voltage Power Systems in Future Spacecraft

NASA Technical Reports Server (NTRS)

Qureshi, A. Haq; Dayton, James A., Jr.

1995-01-01

The scope, size, and capability of the nation's space-based activities are limited by the level of electrical power available. Long-term projections show that there will be an increasing demand for electrical power in future spacecraft programs. The level of power that can be generated, conditioned, transmitted, and used will have to be considerably increased to satisfy these needs, and increased power levels will require that transmission voltages also be increased to minimize weight and resistive losses. At these projected voltages, power systems will not operate satisfactorily without the proper electrical insulation. Open or encapsulated power supplies are currently used to keep the volume and weight of space power systems low and to protect them from natural and induced environmental hazards. Circuits with open packaging are free to attain the pressure of the outer environment, whereas encapsulated circuits are imbedded in insulating materials, which are usually solids, but could be liquids or gases. Up to now, solid insulation has usually been chosen for space power systems. If the use of solid insulation is continued, when voltages increase, the amount of insulation for encapsulation also will have to increase. This increased insulation will increase weight and reduce system reliability. Therefore, non-solid insulation media must be examined to satisfy future spacecraft power and voltage demands. In this report, we assess the suitability of liquid, space vacuum, and gas insulation for space power systems.

Batteryless magneto-driven portable radiac

DOEpatents

Waechter, D.A.; Bjarke, G.O.; Trujillo, F.; Wolf, M.A.; Umbarger, C.J.

1984-10-19

A hand-powerd alternator for generating an alternating voltage provides same through a rectifier to a high capacity capacitor which stores the resultant dc voltage and drives a voltage regulator to provide a constant low voltage output for a portable radiation detection instrument. The instrument includes a Geiger-Mueller detector tube whose output is fed to a pulse detector and then through an event counter and LCD driver circuit to an LCD bar graph for visual display. An audio driver and an audio output is also provided. All circuitry used is low power so that the capacitor can be readily charged to a sufficient level to provide power for at least 30 minutes. A low voltage indicator is provided on the LCD display to indicate the need for manual recharging.

Batteryless magneto-driven portable radiac

DOEpatents

Waechter, David A.; Bjarke, George O.; Trujillo, Faustin; Wolf, Michael A.; Umbarger, C. John

1986-01-01

A hand-powered alternator for generating an alternating voltage provides same through a rectifier to a high capacity capacitor which stores the resultant dc voltage and drives a voltage regulator to provide a constant low voltage output for a portable radiation detection instrument. The instrument includes a Geiger-Muller detector tube whose output is fed to a pulse detector and then through an event counter and LCD driver circuit to an LCD bar graph for visual display. An audio driver and an audio output is also provided. All circuitry used is low power so that the capacitor can be readily charged to a sufficient level to provide power for at least 30 minutes. A low voltage indicator is provided on the LCD display to indicate the need for manual recharging.

Switched-capacitor isolated LED driver

DOEpatents

Sanders, Seth R.; Kline, Mitchell

2016-03-22

A switched-capacitor voltage converter which is particularly well-suited for receiving a line voltage from which to drive current through a series of light emitting diodes (LEDs). Input voltage is rectified in a multi-level rectifier network having switched capacitors in an ascending-bank configuration for passing voltages in uniform steps between zero volts up to full received voltage V.sub.DC. A regulator section, operating on V.sub.DC, comprises switched-capacitor stages of H-bridge switching and flying capacitors. A current controlled oscillator drives the states of the switched-capacitor stages and changes its frequency to maintain a constant current to the load. Embodiments are described for isolating the load from the mains, utilizing an LC tank circuit or a multi-primary-winding transformer.

TiO2 dye sensitized solar cell (DSSC): linear relationship of maximum power point and anthocyanin concentration

NASA Astrophysics Data System (ADS)

Ahmadian, Radin

2010-09-01

This study investigated the relationship of anthocyanin concentration from different organic fruit species and output voltage and current in a TiO2 dye-sensitized solar cell (DSSC) and hypothesized that fruits with greater anthocyanin concentration produce higher maximum power point (MPP) which would lead to higher current and voltage. Anthocyanin dye solution was made with crushing of a group of fresh fruits with different anthocyanin content in 2 mL of de-ionized water and filtration. Using these test fruit dyes, multiple DSSCs were assembled such that light enters through the TiO2 side of the cell. The full current-voltage (I-V) co-variations were measured using a 500 Ω potentiometer as a variable load. Point-by point current and voltage data pairs were measured at various incremental resistance values. The maximum power point (MPP) generated by the solar cell was defined as a dependent variable and the anthocyanin concentration in the fruit used in the DSSC as the independent variable. A regression model was used to investigate the linear relationship between study variables. Regression analysis showed a significant linear relationship between MPP and anthocyanin concentration with a p-value of 0.007. Fruits like blueberry and black raspberry with the highest anthocyanin content generated higher MPP. In a DSSC, a linear model may predict MPP based on the anthocyanin concentration. This model is the first step to find organic anthocyanin sources in the nature with the highest dye concentration to generate energy.