Hole-transport material variation in fully vacuum deposited perovskite solar cells

NASA Astrophysics Data System (ADS)

Polander, Lauren E.; Pahner, Paul; Schwarze, Martin; Saalfrank, Matthias; Koerner, Christian; Leo, Karl

2014-08-01

This work addresses the effect of energy level alignment between the hole-transporting material and the active layer in vacuum deposited, planar-heterojunction CH3NH3PbIx-3Clx perovskite solar cells. Through a series of hole-transport materials, with conductivity values set using controlled p-doping of the layer, we correlate their ionization potentials with the open-circuit voltage of the device. With ionization potentials beyond 5.3 eV, a substantial decrease in both current density and voltage is observed, which highlights the delicate energetic balance between driving force for hole-extraction and maximizing the photovoltage. In contrast, when an optimal ionization potential match is found, the open-circuit voltage can be maximized, leading to power conversion efficiencies of up to 10.9%. These values are obtained with hole-transport materials that differ from the commonly used Spiro-MeO-TAD and correspond to a 40% performance increase versus this reference.

High Efficiency Inverted Planar Perovskite Solar Cells with Solution-Processed NiOx Hole Contact.

PubMed

Yin, Xuewen; Yao, Zhibo; Luo, Qiang; Dai, Xuezeng; Zhou, Yu; Zhang, Ye; Zhou, Yangying; Luo, Songping; Li, Jianbao; Wang, Ning; Lin, Hong

2017-01-25

NiO x is a promising hole-transporting material for perovskite solar cells due to its high hole mobility, good stability, and easy processability. In this work, we employed a simple solution-processed NiO x film as the hole-transporting layer in perovskite solar cells. When the thickness of the perovskite layer increased from 270 to 380 nm, the light absorption and photogenerated carrier density were enhanced and the transporting distance of electron and hole would also increase at the same time, resulting in a large charge transfer resistance and a long hole-extracted process in the device, characterized by the UV-vis, photoluminescence, and electrochemical impedance spectroscopy spectra. Combining both of these factors, an optimal thickness of 334.2 nm was prepared with the perovskite precursor concentration of 1.35 M. Moreover, the optimal device fabrication conditions were further achieved by optimizing the thickness of NiO x hole-transporting layer and PCBM electron selective layer. As a result, the best power conversion efficiency of 15.71% was obtained with a J sc of 20.51 mA·cm -2 , a V oc of 988 mV, and a FF of 77.51% with almost no hysteresis. A stable efficiency of 15.10% was caught at the maximum power point. This work provides a promising route to achieve higher efficiency perovskite solar cells based on NiO or other inorganic hole-transporting materials.

High-Performance Semitransparent Perovskite Solar Cells with 10% Power Conversion Efficiency and 25% Average Visible Transmittance Based on Transparent CuSCN as the Hole-Transporting Material

DOE PAGES

Jung, Jae Woong; Chueh, Chu-Chen; Jen, Alex K. -Y.

2015-07-06

High-performance planar heterojunction perovskite (CH3NH3PbI3) solar cell (PVSC) is demonstrated by utilizing CuSCN as a hole-transporting layer. Efficient hole-transport and hole-extraction at the CuSCN/CH3NH3PbI3 interface facilitate the PVSCs to reach 16% power conversion efficiency (PCE). In addition, excellent transparency of CuSCN enables high-performance semitransparent PVSC (10% PCE and 25% average visible transmittance) to be realized.

Interface Engineering Based on Liquid Metal for Compact-Layer-free, Fully Printable Mesoscopic Perovskite Solar Cells.

PubMed

Zhang, Yumin; Zhao, Jianhong; Zhang, Jin; Jiang, Xixi; Zhu, Zhongqi; Liu, Qingju

2018-05-09

A printing process for the fabrication of perovskite solar cells (PSCs) exhibits promising future application in the photovoltaic industry due to its low-cost and eco-friendly preparation. In mesoscopic carbon-based PSCs, however, compared to conventional ones, the hole-transport-layer-free PSCs often lead to inefficient hole extraction. Here, we used liquid metal (LM, Galinstan) as an interface modifier material in combination with a carbon electrode. Considering the high conductivity and room-temperature fluidity, it is found that LMs are superior in improving hole extraction and, more importantly, LMs tend to be reserved at the interface between ZrO 2 and carbon for enhancing the contact property. Correspondingly, the carrier transfer resistance was decreased at the carbon/perovskite interface. As optimized content, the triple mesoscopic PSCs based on mixed-cation perovskite with a power conversion efficiency of 13.51% was achieved, involving a 26% increase compared to those without LMs. This work opens new techniques for LMs in optoelectronics and printing.

Switching Hole and Electron Transports of Molecules on Metal Oxides by Energy Level Alignment Tuning.

PubMed

Bao, Zhong-Min; Xu, Rui-Peng; Li, Chi; Xie, Zhong-Zhi; Zhao, Xin-Dong; Zhang, Yi-Bo; Li, Yan-Qing; Tang, Jian-Xin

2016-08-31

Charge transport at organic/inorganic hybrid contacts significantly affects the performance of organic optoelectronic devices because the unfavorable energy level offsets at these interfaces can hinder charge injection or extraction due to large barrier heights. Herein, we report a technologically relevant method to functionalize a traditional hole-transport layer of solution-processed nickel oxide (NiOx) with various interlayers. The photoemission spectroscopy measurements reveal the continuous tuning of the NiOx substrate work function ranging from 2.5 to 6.6 eV, enabling the alignment transition of energy levels between the Schottky-Mott limit and Fermi level pinning at the organic/composite NiOx interface. As a result, switching hole and electron transport for the active organic material on the composite NiOx layer is achieved due to the controlled carrier injection/extraction barriers. The experimental findings indicate that tuning the work function of metal oxides with optimum energy level offsets can facilitate the charge transport at organic/electrode contacts.

Crosslinked Remote-Doped Hole-Extracting Contacts Enhance Stability under Accelerated Lifetime Testing in Perovskite Solar Cells.

PubMed

Xu, Jixian; Voznyy, Oleksandr; Comin, Riccardo; Gong, Xiwen; Walters, Grant; Liu, Min; Kanjanaboos, Pongsakorn; Lan, Xinzheng; Sargent, Edward H

2016-04-13

A crosslinked hole-extracting electrical contact is reported, which simultaneously improves the stability and lowers the hysteresis of perovskite solar cells. Polymerizable monomers and crosslinking processes are developed to obviate in situ degradation of the under lying perovskite. The crosslinked material is band-aligned with perovskite. The required free carrier density is induced by a high-work-function metal oxide layer atop the device, following a remote-doping strategy. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improved efficiency of NiOx-based p-i-n perovskite solar cells by using PTEG-1 as electron transport layer

NASA Astrophysics Data System (ADS)

Groeneveld, Bart G. H. M.; Najafi, Mehrdad; Steensma, Bauke; Adjokatse, Sampson; Fang, Hong-Hua; Jahani, Fatemeh; Qiu, Li; ten Brink, Gert H.; Hummelen, Jan C.; Loi, Maria Antonietta

2017-07-01

We present efficient p-i-n type perovskite solar cells using NiOx as the hole transport layer and a fulleropyrrolidine with a triethylene glycol monoethyl ether side chain (PTEG-1) as electron transport layer. This electron transport layer leads to higher power conversion efficiencies compared to perovskite solar cells with PCBM (phenyl-C61-butyric acid methyl ester). The improved performance of PTEG-1 devices is attributed to the reduced trap-assisted recombination and improved charge extraction in these solar cells, as determined by light intensity dependence and photoluminescence measurements. Through optimization of the hole and electron transport layers, the power conversion efficiency of the NiOx/perovskite/PTEG-1 solar cells was increased up to 16.1%.

Insertion of two-dimensional photonic crystal pattern on p-GaN layer of GaN-based light-emitting diodes using bi-layer nanoimprint lithography.

PubMed

Byeon, Kyeong-Jae; Hwang, Seon-Yong; Hong, Chang-Hee; Baek, Jong Hyeob; Lee, Heon

2008-10-01

Nanoimprint lithography (NIL) was adapted to fabricate two-dimensional (2-D) photonic crystal (PC) pattern on the p-GaN layer of InGaN/GaN multi quantum well light-emitting diodes (LEDs) structure to improve the light extraction efficiency. For the uniform transfer of the PC pattern, a bi-layer imprinting method with liquid phase resin was used. The p-GaN layer was patterned with a periodic array of holes by an inductively coupled plasma etching process, based on SiCl4/Ar plasmas. As a result, 2-D photonic crystal patterns with 144 nm, 200 nm and 347 nm diameter holes were uniformly formed on the p-GaN layer and the photoluminescence (PL) intensity of each patterned LED samples was increased by more than 2.6 times, as compared to that of the un-patterned LED sample.

The role of the hole-extraction layer in determining the operational stability of a polycarbazole:fullerene bulk-heterojunction photovoltaic device

NASA Astrophysics Data System (ADS)

Bovill, E.; Scarratt, N.; Griffin, J.; Yi, H.; Iraqi, A.; Buckley, A. R.; Kingsley, J. W.; Lidzey, D. G.

2015-02-01

We have made a comparative study of the relative operational stability of bulk-heterojunction organic photovoltaic (OPV) devices utilising different hole transport layers (HTLs). OPV devices were fabricated based on a blend of the polymer PCDTBT with the fullerene PC70BM, and incorporated the different HTL materials PEDOT:PSS, MoOx and V2O5. Following 620 h of irradiation by light from a solar simulator, we find that devices using the PEDOT:PSS HTL retained the highest efficiency, having a projected T80 lifetime of 14 500 h.

Tunable Transport Gap in Phosphorene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Das, Saptarshi; Zhang, Wei; Demarteau, Marcel

2014-08-11

In this paper, we experimentally demonstrate that the transport gap of phosphorene can be tuned monotonically from ~0.3 to ~1.0 eV when the flake thickness is scaled down from bulk to a single layer. As a consequence, the ON current, the OFF current, and the current ON/OFF ratios of phosphorene field effect transistors (FETs) were found to be significantly impacted by the layer thickness. The transport gap was determined from the transfer characteristics of phosphorene FETs using a robust technique that has not been reported before. The detailed mathematical model is also provided. By scaling the thickness of the gatemore » oxide, we were also able to demonstrate enhanced ambipolar conduction in monolayer and few layer phosphorene FETs. The asymmetry of the electron and the hole current was found to be dependent on the layer thickness that can be explained by dynamic changes of the metal Fermi level with the energy band of phosphorene depending on the layer number. We also extracted the Schottky barrier heights for both the electron and the hole injection as a function of the layer thickness. In conclusion, we discuss the dependence of field effect hole mobility of phosphorene on temperature and carrier concentration.« less

A comparison of angle-beam shear wave scattering from hidden defects in single-and double-layer plates

NASA Astrophysics Data System (ADS)

Maki, Carson T.; Michaels, Jennifer E.; Weng, Yu

2018-04-01

Quantification of shear wave scattering from hidden defects is challenging because it is difficult to separate defect-scattered waves from waves that are scattered from benign structural features such as interfaces and fastener holes. It is even more difficult for the case of a crack emanating from a through-hole because there is complicated scattering from both the hole and the crack. This present work reports the results of a study that considers measurements from several far-surface notches emanating from through-holes in an aluminum plate both before and after a second plate is bonded to the back surface of the first plate. Measurements are also made of scattering from just a through-hole in both the single and bonded plates as a basis for comparison. The presence of the second layer provides a path for energy to leak out of the first plate, which can reduce the scattered energy. The recorded data show that notch scattering is clearly visible in the wavefield data for all of the notched holes. This scattering is quantified by first applying frequency-wavenumber filtering to extract shear waves of interest, and then computing scattered energy as a function of direction. Results for the different specimens are reported and compared to show the differences in scattering caused by the presence of the second layer.

Induced Infiltration of Hole-Transporting Polymer into Photocatalyst for Staunch Polymer-Metal Oxide Hybrid Solar Cells.

PubMed

Park, Jong Hwan; Jung, Youngsuk; Yang, Yooseong; Shin, Hyun Suk; Kwon, Soonchul

2016-10-05

For efficient solar cells based on organic semiconductors, a good mixture of photoactive materials in the bulk heterojunction on the length scale of several tens of nanometers is an important requirement to prevent exciton recombination. Herein, we demonstrate that nanoporous titanium dioxide inverse opal structures fabricated using a self-assembled monolayer method and with enhanced infiltration of electron-donating polymers is an efficient electron-extracting layer, which enhances the photovoltaic performance. A calcination process generates an inverse opal structure of titanium dioxide (<70 nm of pore diameters) providing three-dimensional (3D) electron transport pathways. Hole-transporting polymers was successfully infiltrated into the pores of the surface-modified titanium dioxide under vacuum conditions at 200 °C. The resulting geometry expands the interfacial area between hole- and electron-transport materials, increasing the thickness of the active layer. The controlled polymer-coating process over titanium dioxide materials enhanced photocurrent of the solar cell device. Density functional theory calculations show improved interfacial adhesion between the self-assembled monolayer-modified surface and polymer molecules, supporting the experimental result of enhanced polymer infiltration into the voids. These results suggest that the 3D inverse opal structure of the surface-modified titanium dioxide can serve as a favorable electron-extracting layer in further enhancing optoelectronic performance based on organic or organic-inorganic hybrid solar cell.

Narrow Band Gap Lead Sulfide Hole Transport Layers for Quantum Dot Photovoltaics.

PubMed

Zhang, Nanlin; Neo, Darren C J; Tazawa, Yujiro; Li, Xiuting; Assender, Hazel E; Compton, Richard G; Watt, Andrew A R

2016-08-24

The band structure of colloidal quantum dot (CQD) bilayer heterojunction solar cells is optimized using a combination of ligand modification and QD band gap control. Solar cells with power conversion efficiencies of up to 9.33 ± 0.50% are demonstrated by aligning the absorber and hole transport layers (HTL). Key to achieving high efficiencies is optimizing the relative position of both the valence band and Fermi energy at the CQD bilayer interface. By comparing different band gap CQDs with different ligands, we find that a smaller band gap CQD HTL in combination with a more p-type-inducing CQD ligand is found to enhance hole extraction and hence device performance. We postulate that the efficiency improvements observed are largely due to the synergistic effects of narrower band gap QDs, causing an upshift of valence band position due to 1,2-ethanedithiol (EDT) ligands and a lowering of the Fermi level due to oxidation.

Asymmetric metal-insulator-metal (MIM) structure formed by pulsed Nd:YAG laser deposition with titanium nitride (TiN) and aluminum nitride (AlN)

NASA Astrophysics Data System (ADS)

Oshikane, Yasushi

2017-08-01

A novel nanostructured end cap for a truncated conical apex of optical fiber has been studied experimental and numerically. The peculiar cap is composed of asymmetric metal-insulator-metal (MIM) structure coupled with subwavelength holes. The MIM structure may act as reflective band cut filter or generator of surface plasmon polariton (SPP). And nano holes in the thicker metal layer could extract the SPP from the MIM structure and lead it to outer surface of the metal layer. For the purpose, the author has started to create the asymmetric MIM structure with TiN and AlN by pulsed laser deposition (PLD). The resultant structure was diagnosed by spectroscopic analyses.

Low‐Temperature Combustion Synthesis of a Spinel NiCo2O4 Hole Transport Layer for Perovskite Photovoltaics

PubMed Central

Papadas, Ioannis T.; Ioakeimidis, Apostolos; Armatas, Gerasimos S.

2018-01-01

Abstract The synthesis and characterization of low‐temperature solution‐processable monodispersed nickel cobaltite (NiCo2O4) nanoparticles (NPs) via a combustion synthesis is reported using tartaric acid as fuel and the performance as a hole transport layer (HTL) for perovskite solar cells (PVSCs) is demonstrated. NiCo2O4 is a p‐type semiconductor consisting of environmentally friendly, abundant elements and higher conductivity compared to NiO. It is shown that the combustion synthesis of spinel NiCo2O4 using tartaric acid as fuel can be used to control the NPs size and provide smooth, compact, and homogeneous functional HTLs processed by blade coating. Study of PVSCs with different NiCo2O4 thickness as HTL reveals a difference on hole extraction efficiency, and for 15 nm, optimized thickness enhanced hole carrier collection is achieved. As a result, p‐i‐n structure of PVSCs with 15 nm NiCo2O4 HTLs shows reliable performance and power conversion efficiency values in the range of 15.5% with negligible hysteresis. PMID:29876223

Inverted Planar Perovskite Solar Cells with a High Fill Factor and Negligible Hysteresis by the Dual Effect of NaCl-Doped PEDOT:PSS.

PubMed

Hu, Lijun; Sun, Kuan; Wang, Ming; Chen, Wei; Yang, Bo; Fu, Jiehao; Xiong, Zhuang; Li, Xinyi; Tang, Xiaosheng; Zang, Zhigang; Zhang, Shupeng; Sun, Lidong; Li, Meng

2017-12-20

The performance of inverted perovskite solar cells is highly dependent on hole extraction and surface properties of hole transport layers. To highlight the important role of hole transport layers, a facile and simple method is developed by adding sodium chloride (NaCl) into poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The average power conversion efficiency of the perovskite solar cells prepared on NaCl-doped PEDOT:PSS is 17.1% with negligible hysteresis, compared favorably to the control devices (15.1%). Particularly, they exhibit markedly improved V oc and fill factor (FF), with the best FF as high as 81.9%. The enhancement of photovoltaic performance is ascribed to two effects. Better conductivity and hole extraction of PEDOT:PSS are observed after NaCl doping. More intriguingly, the perovskite polycrystalline film shows a preferred orientation along the (001) direction on NaCl-doped PEDOT:PSS, leading to a more uniform thin film. The comparison of the crystal structure between NaCl and MAPbCl 3 indicates a lattice constant mismatch less than 2% and a matched chlorine atom arrangement on the (001) surface, which implies that the NaCl crystallites on the top surface of PEDOT:PSS might serve as seeds guiding the growth of perovskite crystals. This simple method is fully compatible with printing technologies to mass-produce perovskite solar cells with high efficiency and tunable crystal orientations.

Comparison and characterization of different tunnel layers, suitable for passivated contact formation

NASA Astrophysics Data System (ADS)

Ling, Zhi Peng; Xin, Zheng; Ke, Cangming; Jammaal Buatis, Kitz; Duttagupta, Shubham; Lee, Jae Sung; Lai, Archon; Hsu, Adam; Rostan, Johannes; Stangl, Rolf

2017-08-01

Passivated contacts for solar cells can be realized using a variety of differently formed ultra-thin tunnel oxide layers. Assessing their interface properties is important for optimization purposes. In this work, we demonstrate the ability to measure the interface defect density distribution D it(E) and the fixed interface charge density Q f for ultra-thin passivation layers operating within the tunnel regime (<2 nm). Various promising tunnel layer candidates [i.e., wet chemically formed SiO x , UV photo-oxidized SiO x , and atomic layer deposited (ALD) AlO x ] are investigated for their potential application forming electron or hole selective tunnel layer passivated contacts. In particular, ALD AlO x is identified as a promising tunnel layer candidate for hole-extracting passivated contact formation, stemming from its high (negative) fixed interface charge density in the order of -6 × 1012 cm-2. This is an order of magnitude higher compared to wet chemically or UV photo-oxidized formed silicon oxide tunnel layers, while keeping the density of interface defect states D it at a similar level (in the order of ˜2 × 1012 cm-2 eV-1). This leads to additional field effect passivation and therefore to significantly higher measured effective carrier lifetimes (˜2 orders of magnitude). A surface recombination velocity of ˜40 cm/s has been achieved for a 1.5 nm thin ALD AlO x tunnel layer prior to capping by an additional hole transport material, like p-doped poly-Si or PEDOT:PSS.

Polymer and small molecule based hybrid light source

DOEpatents

Choong, Vi-En; Choulis, Stelios; Krummacher, Benjamin Claus; Mathai, Mathew; So, Franky

2010-03-16

An organic electroluminescent device, includes: a substrate; a hole-injecting electrode (anode) coated over the substrate; a hole injection layer coated over the anode; a hole transporting layer coated over the hole injection layer; a polymer based light emitting layer, coated over the hole transporting layer; a small molecule based light emitting layer, thermally evaporated over the polymer based light emitting layer; and an electron-injecting electrode (cathode) deposited over the electroluminescent polymer layer.

Microstructure, Morphology, and Nanomechanical Properties Near Fine Holes Produced by Electro-Discharge Machining

NASA Astrophysics Data System (ADS)

Blau, P. J.; Howe, J. Y.; Coffey, D. W.; Trejo, R. M.; Kenik, E. D.; Jolly, B. C.; Yang, N.

2012-08-01

Fine holes in metal alloys are employed for many important technological purposes, including cooling and the precise atomization of liquids. For example, they play an important role in the metering and delivery of fuel to the combustion chambers in energy-efficient, low-emission diesel engines. Electro-discharge machining (EDM) is one process employed to produce such holes. Since the hole shape and bore morphology can affect fluid flow, and holes also represent structural discontinuities in the tips of the spray nozzles, it is important to understand the microstructures adjacent to these holes, the features of the hole walls, and the nanomechanical properties of the material that was in some manner altered by the EDM hole-making process. Several techniques were used to characterize the structure and properties of spray-holes in a commercial injector nozzle. These include scanning electron microscopy, cross sectioning and metallographic etching, bore surface roughness measurements by optical interferometry, scanning electron microscopy, and transmission electron microscopy of recast EDM layers extracted with the help of a focused ion beam.

Rational Design of Molecular Hole-Transporting Materials for Perovskite Solar Cells: Direct versus Inverted Device Configurations.

PubMed

Grisorio, Roberto; Iacobellis, Rosabianca; Listorti, Andrea; De Marco, Luisa; Cipolla, Maria Pia; Manca, Michele; Rizzo, Aurora; Abate, Antonio; Gigli, Giuseppe; Suranna, Gian Paolo

2017-07-26

Due to a still limited understanding of the reasons making 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (Spiro-OMeTAD) the state-of-the-art hole-transporting material (HTM) for emerging photovoltaic applications, the molecular tailoring of organic components for perovskite solar cells (PSCs) lacks in solid design criteria. Charge delocalization in radical cationic states can undoubtedly be considered as one of the essential prerequisites for an HTM, but this aspect has been investigated to a relatively minor extent. In marked contrast with the 3-D structure of Spiro-OMeTAD, truxene-based HTMs Trux1 and Trux2 have been employed for the first time in PSCs fabricated with a direct (n-i-p) or inverted (p-i-n) architecture, exhibiting a peculiar behavior with respect to the referential HTM. Notwithstanding the efficient hole extraction from the perovskite layer exhibited by Trux1 and Trux2 in direct configuration devices, their photovoltaic performances were detrimentally affected by their poor hole transport. Conversely, an outstanding improvement of the photovoltaic performances in dopant-free inverted configuration devices compared to Spiro-OMeTAD was recorded, ascribable to the use of thinner HTM layers. The rationalization of the photovoltaic performances exhibited by different configuration devices discussed in this paper can provide new and unexpected prospects for engineering the interface between the active layer of perovskite-based solar cells and the hole transporters.

Two-Step Physical Deposition of a Compact CuI Hole-Transport Layer and the Formation of an Interfacial Species in Perovskite Solar Cells.

PubMed

Gharibzadeh, Saba; Nejand, Bahram Abdollahi; Moshaii, Ahmad; Mohammadian, Nasim; Alizadeh, Amir Hossein; Mohammadpour, Rahele; Ahmadi, Vahid; Alizadeh, Abdolali

2016-08-09

A simple and practical approach is introduced for the deposition of CuI as an inexpensive inorganic hole-transport material (HTM) for the fabrication of low cost perovskite solar cells (PSCs) by gas-solid phase transformation of Cu to CuI. The method provides a uniform and well-controlled CuI layer with large grains and good compactness that prevents the direct connection between the contact electrodes. Solar cells prepared with CuI as the HTM with Au electrodes displays an exceptionally high short-circuit current density of 32 mA cm(-2) , owing to an interfacial species formed between the perovskite and the Cu resulting in a long wavelength contribution to the incident photon-to-electron conversion efficiency (IPCE), and an overall power conversion efficiency (PCE) of 7.4 %. The growth of crystalline and uniform CuI on a low roughness perovskite layer leads to remarkably high charge extraction in the cells, which originates from the high hole mobility of CuI in addition to a large number of contact points between CuI and the perovskite layer. In addition, the solvent-free method has no damaging side effect on the perovskite layer, which makes it an appropriate method for large scale applications of CuI in perovskite solar cells. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhanced efficiency and air-stability of NiOX-based perovskite solar cells via PCBM electron transport layer modification with Triton X-100.

PubMed

Lee, Kisu; Ryu, Jaehoon; Yu, Haejun; Yun, Juyoung; Lee, Jungsup; Jang, Jyongsik

2017-11-02

We modified phenyl-C61-butyric acid methyl ester (PCBM) for use as a stable, efficient electron transport layer (ETL) in inverted perovskite solar cells (PSCs). PCBM containing a surfactant Triton X-100 acts as the ETL and NiO X nanocrystals act as a hole transport layer (HTL). Atomic force microscopy and scanning electron microscopy images showed that surfactant-modified PCBM (s-PCBM) forms a high-quality, uniform, and dense ETL on the rough perovskite layer. This layer effectively blocks holes and reduces interfacial recombination. Steady-state photoluminescence and electrochemical impedance spectroscopy analyses confirmed that Triton X-100 improved the electron extraction performance of PCBM. When the s-PCBM ETL was used, the average power conversion efficiency increased from 10.76% to 15.68%. This improvement was primarily caused by the increases in the open-circuit voltage and fill factor. s-PCBM-based PSCs also showed good air-stability, retaining 83.8% of their initial performance after 800 h under ambient conditions.

Thermally Stable Solution Processed Vanadium Oxide as a Hole Extraction Layer in Organic Solar Cells

PubMed Central

Alsulami, Abdullah; Griffin, Jonathan; Alqurashi, Rania; Yi, Hunan; Iraqi, Ahmed; Lidzey, David; Buckley, Alastair

2016-01-01

Low-temperature solution-processable vanadium oxide (V2Ox) thin films have been employed as hole extraction layers (HELs) in polymer bulk heterojunction solar cells. V2Ox films were fabricated in air by spin-coating vanadium(V) oxytriisopropoxide (s-V2Ox) at room temperature without the need for further thermal annealing. The deposited vanadium(V) oxytriisopropoxide film undergoes hydrolysis in air, converting to V2Ox with optical and electronic properties comparable to vacuum-deposited V2O5. When s-V2Ox thin films were annealed in air at temperatures of 100 °C and 200 °C, OPV devices showed similar results with good thermal stability and better light transparency. Annealing at 300 °C and 400 °C resulted in a power conversion efficiency (PCE) of 5% with a decrement approximately 15% lower than that of unannealed films; this is due to the relative decrease in the shunt resistance (Rsh) and an increase in the series resistance (Rs) related to changes in the oxidation state of vanadium. PMID:28773356

Efficient Planar Perovskite Solar Cells Using Passivated Tin Oxide as an Electron Transport Layer.

PubMed

Lee, Yonghui; Lee, Seunghwan; Seo, Gabseok; Paek, Sanghyun; Cho, Kyung Taek; Huckaba, Aron J; Calizzi, Marco; Choi, Dong-Won; Park, Jin-Seong; Lee, Dongwook; Lee, Hyo Joong; Asiri, Abdullah M; Nazeeruddin, Mohammad Khaja

2018-06-01

Planar perovskite solar cells using low-temperature atomic layer deposition (ALD) of the SnO 2 electron transporting layer (ETL), with excellent electron extraction and hole-blocking ability, offer significant advantages compared with high-temperature deposition methods. The optical, chemical, and electrical properties of the ALD SnO 2 layer and its influence on the device performance are investigated. It is found that surface passivation of SnO 2 is essential to reduce charge recombination at the perovskite and ETL interface and show that the fabricated planar perovskite solar cells exhibit high reproducibility, stability, and power conversion efficiency of 20%.

Development of organic-inorganic double hole-transporting material for high performance perovskite solar cells

NASA Astrophysics Data System (ADS)

Jo, Jea Woong; Seo, Myung-Seok; Jung, Jae Woong; Park, Joon-Suh; Sohn, Byeong-Hyeok; Ko, Min Jae; Son, Hae Jung

2018-02-01

The control of the optoelectronic properties of the interlayers of perovskite solar cells (PSCs) is crucial for achieving high photovoltaic performances. Of the solution-processable interlayer candidates, NiOx is considered one of the best inorganic hole-transporting layer (HTL) materials. However, the power conversion efficiencies (PCEs) of NiOx-based PSCs are limited by the unfavorable contact between perovskite layers and NiOx HTLs, the high density of surface trap sites, and the inefficient charge extraction from perovskite photoactive layers to anodes. Here, we introduce a new organic-inorganic double HTL consisting of a Cu:NiOx thin film passivated by a conjugated polyelectrolyte (PhNa-1T) film. This double HTL has a significantly lower pinhole density and forms better contact with perovskite films, which results in enhanced charge extraction. As a result, the PCEs of PSCs fabricated with the double HTL are impressively improved up to 17.0%, which is more than 25% higher than that of the corresponding PSC with a Cu:NiOx HTL. Moreover, PSCs with the double HTLs exhibit similar stabilities under ambient conditions to devices using inorganic Cu:NiOx. Therefore, this organic-inorganic double HTL is a promising interlayer material for high performance PSCs with high air stability.

Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof

DOEpatents

Nikolic, Rebecca J.; Conway, Adam M.; Nelson, Art J.; Payne, Stephen A.

2012-09-04

In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.

A Solution-Processed Transparent NiO Hole-Extraction Layer for High-Performance Inverted Perovskite Solar Cells.

PubMed

Tang, Li Juan; Chen, Xiao; Wen, Tian Yu; Yang, Shuang; Zhao, Jun Jie; Qiao, Hong Wei; Hou, Yu; Yang, Hua Gui

2018-02-26

A highly transparent NiO layer was prepared by a solution processing method with nickel(II) 2-ethylhexanoate in non-polar solvent and utilized as HTM in perovskite solar cells. Excellent optical transmittance and the matched energy level lead to the enhanced power conversion efficiency (PCE, 18.15 %) than that of conventional sol-gel-processed NiO-based device (12.98 %). © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

A nanoscale study of charge extraction in organic solar cells: the impact of interfacial molecular configurations.

PubMed

Tang, Fu-Ching; Wu, Fu-Chiao; Yen, Chia-Te; Chang, Jay; Chou, Wei-Yang; Gilbert Chang, Shih-Hui; Cheng, Horng-Long

2015-01-07

In the optimization of organic solar cells (OSCs), a key problem lies in the maximization of charge carriers from the active layer to the electrodes. Hence, this study focused on the interfacial molecular configurations in efficient OSC charge extraction by theoretical investigations and experiments, including small molecule-based bilayer-heterojunction (sm-BLHJ) and polymer-based bulk-heterojunction (p-BHJ) OSCs. We first examined a well-defined sm-BLHJ model system of OSC composed of p-type pentacene, an n-type perylene derivative, and a nanogroove-structured poly(3,4-ethylenedioxythiophene) (NS-PEDOT) hole extraction layer. The OSC with NS-PEDOT shows a 230% increment in the short circuit current density compared with that of the conventional planar PEDOT layer. Our theoretical calculations indicated that small variations in the microscopic intermolecular interaction among these interfacial configurations could induce significant differences in charge extraction efficiency. Experimentally, different interfacial configurations were generated between the photo-active layer and the nanostructured charge extraction layer with periodic nanogroove structures. In addition to pentacene, poly(3-hexylthiophene), the most commonly used electron-donor material system in p-BHJ OSCs was also explored in terms of its possible use as a photo-active layer. Local conductive atomic force microscopy was used to measure the nanoscale charge extraction efficiency at different locations within the nanogroove, thus highlighting the importance of interfacial molecular configurations in efficient charge extraction. This study enriches understanding regarding the optimization of the photovoltaic properties of several types of OSCs by conducting appropriate interfacial engineering based on organic/polymer molecular orientations. The ultimate power conversion efficiency beyond at least 15% is highly expected when the best state-of-the-art p-BHJ OSCs are combined with present arguments.

A hole modulator for InGaN/GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei; Demir, Hilmi Volkan

2015-02-01

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ˜332 meV to ˜294 meV at 80 A/cm2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

Highly-efficient and low-temperature perovskite solar cells by employing a Bi-hole transport layer consisting of vanadium oxide and copper phthalocyanine.

PubMed

Lei, Ting; Dong, Hua; Xi, Jun; Niu, Yong; Xu, Jie; Yuan, Fang; Jiao, Bo; Zhang, Wenwen; Hou, Xun; Wu, Zhaoxin

2018-06-12

In this article, an inorganic-organic bilayer hole transport layer (B-HTL) is designed and utilized in planar perovskite solar cells. Here the B-HTL consists of an inorganic VOx matrix and a copper phthalocyanine (CuPc) buffer layer, providing excellent resistance to moisture as well as the alignment of the interfacial energy level. Benefiting from this typical HTL, an enlarged built-in potential and charge extraction can be achieved in PSCs simultaneously. Correspondingly, a champion device with a B-HTL shows a 16.85% efficiency with negligible hysteresis, which is superior to that of a PSC based on a PEDOT:PSS HTL. Meanwhile, significantly prolonged stability of the PSC with the B-HTL can be observed, exhibiting only a 10% efficiency loss after 350 hours in ambient air. Moreover, such an entirely low-temperature (≤60 °C) fabrication process of this typical PSC exhibits its successful application in flexible devices.

Copper thiocyanate: An attractive hole transport/extraction layer for use in organic photovoltaic cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Treat, Neil D., E-mail: neil.treat@imperial.ac.uk, E-mail: t.anthopoulos@imperial.ac.uk; Stingelin, Natalie; Yaacobi-Gross, Nir

2015-07-06

We report the advantageous properties of the inorganic molecular semiconductor copper(I) thiocyanate (CuSCN) for use as a hole collection/transport layer (HTL) in organic photovoltaic (OPV) cells. CuSCN possesses desirable HTL energy levels [i.e., valence band at −5.35 eV, 0.35 eV deeper than poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS)], which produces a 17% increase in power conversion efficiency (PCE) relative to PEDOT:PSS-based devices. In addition, a two-fold increase in shunt resistance for the solar cells measured in dark conditions is achieved. Ultimately, CuSCN enables polymer:fullerene based OPV cells to achieve PCE > 8%. CuSCN continues to offer promise as a chemically stable and straightforward replacement for the commonly usedmore » PEDOT:PSS.« less

Light illumination intensity dependence of photovoltaic parameter in polymer solar cells with ammonium heptamolybdate as hole extraction layer.

PubMed

Liu, Zhiyong; Niu, Shengli; Wang, Ning

2018-01-01

A low-temperature, solution-processed molybdenum oxide (MoO X ) layer and a facile method for polymer solar cells (PSCs) is developed. The PSCs based on a MoO X layer as the hole extraction layer (HEL) is a significant advance for achieving higher photovoltaic performance, especially under weaker light illumination intensity. Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) measurements show that the (NH 4 ) 6 Mo 7 O 24 molecule decomposes and forms the molybdenum oxide (MoO X ) molecule when undergoing thermal annealing treatment. In this study, PSCs with the MoO X layer as the HEL exhibited better photovoltaic performance, especially under weak light illumination intensity (from 100 to 10mWcm -2 ) compared to poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)-based PSCs. Analysis of the current density-voltage (J-V) characteristics at various light intensities provides information on the different recombination mechanisms in the PSCs with a MoO X and PEDOT:PSS layer as the HEL. That the slopes of the open-circuit voltage (V OC ) versus light illumination intensity plots are close to 1 unity (kT/q) reveals that bimolecular recombination is the dominant and weaker monomolecular recombination mechanism in open-circuit conditions. That the slopes of the short-circuit current density (J SC ) versus light illumination intensity plots are close to 1 reveals that the effective charge carrier transport and collection mechanism of the MoO X /indium tin oxide (ITO) anode is the weaker bimolecular recombination in short-circuit conditions. Our results indicate that MoO X is an alternative candidate for high-performance PSCs, especially under weak light illumination intensity. Copyright © 2017 Elsevier Inc. All rights reserved.

Amorphous Hole-Transporting Material based on 2,2'-Bis-substituted 1,1'-Biphenyl Scaffold for Application in Perovskite Solar Cells.

PubMed

Magomedov, Artiom; Sakai, Nobuya; Kamarauskas, Egidijus; Jokubauskaitė, Gabrielė; Franckevičius, Marius; Jankauskas, Vygintas; Snaith, Henry J; Getautis, Vytautas

2017-05-04

Perovskite solar cells are considered a promising technology for solar-energy conversion, with power conversion efficiencies currently exceeding 20 %. In most of the reported devices, Spiro-OMeTAD is used for positive-charge extraction and transport layer. Although a number of alternative hole-transporting materials with different aromatic or heteroaromatic fragments have already been synthesized, a cheap and well-performing hole-transporting material is still in high demand. In this work, a two-step synthesis of a carbazole-based hole-transporting material is presented. Synthesized compounds exhibited amorphous nature, good solubility and thermal stability. The perovskite solar cells employing the newly synthesized material generated a power conversion efficiency of 16.5 % which is slightly lower than that obtained with Spiro-OMeTAD (17.5 %). The low-cost synthesis and high performance makes our hole-transport material promising for applications in perovskite-based optoelectronic devices. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

GaN-based flip-chip LEDs with highly reflective ITO/DBR p-type and via hole-based n-type contacts for enhanced current spreading and light extraction

NASA Astrophysics Data System (ADS)

Zhou, Shengjun; Zheng, Chenju; Lv, Jiajiang; Gao, Yilin; Wang, Ruiqing; Liu, Sheng

2017-07-01

We demonstrate GaN-based double-layer electrode flip-chip light-emitting diodes (DLE-FCLED) with highly reflective indium-tin oxide (ITO)/distributed bragg reflector (DBR) p-type contact and via hole-based n-type contacts. Transparent thin ITO in combination with TiO2/SiO2 DBR is used for reflective p-type ohmic contact, resulting in a significant reduction in absorption of light by opaque metal electrodes. The finely distributed via hole-based n-type contacts are formed on the n-GaN layer by etching via holes through p-GaN and multiple quantum well (MQW) active layer, leading to reduced lateral current spreading length, and hence alleviated current crowding effect. The forward voltage of the DLE-FCLED is 0.31 V lower than that of the top-emitting LED at 90 mA. The light output power of DLE-FCLED is 15.7% and 80.8% higher than that of top-emitting LED at 90 mA and 300 mA, respectively. Compared to top- emitting LED, the external quantum efficiency (EQE) of DLE-FCLED is enhanced by 15.4% and 132% at 90 mA and 300 mA, respectively. The maximum light output power of the DLE-FCLED obtained at 195.6 A/cm2 is 1.33 times larger than that of the top-emitting LED obtained at 93 A/cm2.

Estimation of carrier mobility and charge behaviors of organic semiconductor films in metal-insulator-semiconductor diodes consisting of high-k oxide/organic semiconductor double layers

NASA Astrophysics Data System (ADS)

Chosei, Naoya; Itoh, Eiji

2018-02-01

We have comparatively studied the charge behaviors of organic semiconductor films based on charge extraction by linearly increasing voltage in a metal-insulator-semiconductor (MIS) diode structure (MIS-CELIV) and by classical capacitance-voltage measurement. The MIS-CELIV technique allows the selective measurement of electron and hole mobilities of n- and p-type organic films with thicknesses representative of those of actual devices. We used an anodic oxidized sputtered Ta or Hf electrode as a high-k layer, and it effectively blocked holes at the insulator/semiconductor interface. We estimated the hole mobilities of the polythiophene derivatives regioregular poly(3-hexylthiophene) (P3HT) and poly(3,3‧‧‧-didodecylquarterthiophene) (PQT-12) before and after heat treatment in the ITO/high-k/(thin polymer insulator)/semiconductor/MoO3/Ag device structure. The hole mobility of PQT-12 was improved from 1.1 × 10-5 to 2.1 × 10-5 cm2 V-1 s-1 by the heat treatment of the device at 100 °C for 30 min. An almost two orders of magnitude higher mobility was obtained in MIS diodes with P3HT as the p-type layer. We also determined the capacitance from the displacement current in MIS diodes at a relatively low-voltage sweep, and it corresponded well to the classical capacitance-voltage and frequency measurement results.

Fabrication of Al2O3 coated 2D TiO2 nanoparticle photonic crystal layers by reverse nano-imprint lithography and plasma enhanced atomic layer deposition.

PubMed

Kim, Ki-Kang; Ko, Ki-Young; Ahn, Jinho

2013-10-01

This paper reports simple process to enhance the extraction efficiency of photoluminescence (PL) from Eu-doped yttrium oxide (Y2O3:Eu3+) thin-film phosphor (TFP). Two-dimensional (2D) photonic crystal layer (PCL) was fabricated on Y2O3:Eu3+ phosphor films by reverse nano-imprint method using TiO2 nanoparticle solution as a nano-imprint resin and a 2D hole-patterned PDMS stamp. Atomic scale controlled Al2O3 deposition was performed onto this 2D nanoparticle PCL for the optimization of the photonic crystal pattern size and stabilization of TiO2 nanoparticle column structure. As a result, the light extraction efficiency of the Y2O3:Eu3+ phosphor film was improved by 2.0 times compared to the conventional Y2O3:Eu3+ phosphor film.

Probability of detection for bolt hole eddy current in extracted from service aircraft wing structures

NASA Astrophysics Data System (ADS)

Underhill, P. R.; Uemura, C.; Krause, T. W.

2018-04-01

Fatigue cracks are prone to develop around fasteners found in multi-layer aluminum structures on aging aircraft. Bolt hole eddy current (BHEC) is used for detection of cracks from within bolt holes after fastener removal. In support of qualification towards a target a90/95 (detect 90% of cracks of depth a, 95% of the time) of 0.76 mm (0.030"), a preliminary probability of detection (POD) study was performed to identify those parameters whose variation may keep a bolt hole inspection from attaining its goal. Parameters that were examined included variability in lift-off due to probe type, out-of-round holes, holes with diameters too large to permit surface-contact of the probe and mechanical damage to the holes, including burrs. The study examined the POD for BHEC of corner cracks in unfinished fastener holes extracted from service material. 68 EDM notches were introduced into two specimens of a horizontal stabilizer from a CC-130 Hercules aircraft. The fastener holes were inspected in the unfinished state, simulating potential inspection conditions, by 7 certified inspectors using a manual BHEC setup with an impedance plane display and also with one inspection conducted utilizing a BHEC automated C-Scan apparatus. While the standard detection limit of 1.27 mm (0.050") was achieved, given the a90/95 of 0.97 mm (0.039"), the target 0.76 mm (0.030") was not achieved. The work highlighted a number of areas where there was insufficient information to complete the qualification. Consequently, a number of recommendations were made. These included; development of a specification for minimum probe requirements; criteria for condition of the hole to be inspected, including out-of-roundness and presence of corrosion pits; statement of range of hole sizes; inspection frequency and data display for analysis.

On the hole accelerator for III-nitride light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zi-Hui, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn; Zhang, Yonghui; Bi, Wengang, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn

2016-04-11

In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer (EBL)/p-GaN/p-Al{sub x}Ga{sub 1−x}N heterojunction) with different designs, including the AlN composition in the p-Al{sub x}Ga{sub 1−x}N layer, and the thickness for the p-GaN layer and the p-Al{sub x}Ga{sub 1−x}N layer. According to our findings, the energy that the holes obtain does not monotonically increase as the AlN incorporation in the p-Al{sub x}Ga{sub 1−x}N layer increases. Meanwhile, with p-GaN layer or p-Al{sub x}Ga{sub 1−x}N layer thickening, the energy that themore » holes gain increases and then reaches a saturation level. Thus, the hole injection efficiency and the device efficiency are very sensitive to the p-EBL/p-GaN/p-Al{sub x}Ga{sub 1−x}N design, and the hole accelerator can effectively increase the hole injection if properly designed.« less

A hole modulator for InGaN/GaN light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei

2015-02-09

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall holemore » concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332 meV to ∼294 meV at 80 A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.« less

Correlation of Pliocene and Pleistocene tephra layers between the Turkana Basin of East Africa and the Gulf of Aden

USGS Publications Warehouse

Brown, F.H.; Sarna-Wojcicki, A. M.; Meyer, C.E.; Haileab, B.

1992-01-01

Electron-microprobe analyses of glass shards from volcanic ash in Pliocene and Pleistocene deep-sea sediments in the Gulf of Aden and the Somali Basin demonstrate that most of the tephra layers correlate with tephra layers known on land in the Turkana Basin of northern Kenya and southern Ethiopia. Previous correlations are reviewed, and new correlations proposed. Together these data provide correlations between the deep-sea cores, and to the land-based sections at eight levels ranging in age from about 4 to 0.7 Ma. Specifically, we correlate the Moiti Tuff (???4.1 Ma) with a tephra layer at 188.6 m depth in DSDP hole 231 and with a tephra layer at 150 m depth in DSDP hole 241, the Wargolo Tuff with a tephra layer at 179.7 m in DSDP Hole 231 and with a tephra layer at 155.3 m depth in DSDP Hole 232, the Lomogol Tuff (defined here) with a tephra layer at 165 m in DSDP Hole 232A, the Lokochot Tuff with a tephra layer at 140.1 m depth in DSDP Hole 232, the Tulu Bor Tuff with a tephra layer at 160.8 m depth in DSDP Hole 231, the Kokiselei Tuff with a tephra layer at 120 m depth in DSDP Hole 231 and with a tephra layer at 90.3 m depth in DSDP Hole 232, the Silbo Tuff (0.74 Ma) with a tephra layer at 35.5 m depth in DSDP Hole 231 and possibly with a tephra layer at 10.9 m depth in DSDP Hole 241. We also present analyses of other tephra from the deep sea cores for which correlative units on land are not yet known. The correlated tephra layers provide eight chronostratigraphic horizons that make it possible to temporally correlate paleoecological and paleoclimatic data between the terrestrial and deep-sea sites. Such correlations may make it possible to interpret faunal evolution in the Lake Turkana basin and other sites in East Africa within a broader regional or global paleoclimatic context. ?? 1992.

The effect of the hole injection layer on the performance of single layer organic light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wenjin, Zeng; Ran, Bi; Hongmei, Zhang, E-mail: iamhmzhang@njupt.edu.cn, E-mail: iamwhuang@njupt.edu.cn

2014-12-14

Efficient single-layer organic light-emitting diodes (OLEDs) were reported based on a green fluorescent dye 10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7–tetramethyl-1H,5H,11H-(1) benzopyropyrano (6,7-8-I,j)quinolizin-11-one (C545T). Herein, poly(3,4-ethylenedioxy thiophene) poly(styrene sulfonate) were, respectively, applied as the injection layer for comparison. The hole transport properties of the emission layer with different hole injection materials are well investigated via current-voltage measurement. It was clearly found that the hole injection layers (HILs) play an important role in the adjustment of the electron/hole injection to attain transport balance of charge carriers in the single emission layer of OLEDs with electron-transporting host. The layer of tris-(8-hydroxyquinoline) aluminum played a dual role of hostmore » and electron-transporting materials within the emission layer. Therefore, appropriate selection of hole injection layer is a key factor to achieve high efficiency OLEDs with single emission layer.« less

High-performance polymeric photovoltaic cells with a gold chloride-treated polyacrylonitrile hole extraction interlayer

NASA Astrophysics Data System (ADS)

Jeong, Ji-Ho; Noh, Yong-Jin; Kim, Seok-Soon; Kwon, Sung-Nam; Na, Seok-In

2018-03-01

We introduce a high efficiency polymeric photovoltaic cell (PPV) to be obtained by polyacrylonitrile (PAN) hole extraction layer (HEL) modification with gold chloride (AuCl3). The role of PAN HELs with AuCl3 and their effects on solar cell performances were studied with ultraviolet photoemission spectroscopy, atomic force microscopy, internal resistances in PPVs, and current-voltage power curves. The resultant PPVs with AuCl3-treated PAN HELs showed improved cell efficiency compared to PSCs with no interlayer and PAN without AuCl3. Furthermore, with AuCl3-treated PAN, we finally achieved a high efficiency of 6.91%, and a desirable PPV-stability in poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b‧]dithiophe-ne-2,6-diyl][3-fluoro-2-[(2-thylhexyl)carbonyl]-thieno[3,4-b]thiophenediyl

Stable Organic Radicals as Hole Injection Dopants for Efficient Optoelectronics.

PubMed

Bin, Zhengyang; Guo, Haoqing; Liu, Ziyang; Li, Feng; Duan, Lian

2018-02-07

Precursors of reactive organic radicals have been widely used as n-dopants in electron-transporting materials to improve electron conductivity and enhance electron injection. However, the utilization of organic radicals in hole counterparts has been ignored. In this work, stable organic radicals have been proved for the first time to be efficient dopants to enhance hole injection. From the absorbance spectra and the ultraviolet photoelectron spectra, we could observe an efficient electron transfer between the organic radical, (4-N-carbazolyl-2,6-dichlorophenyl)bis(2,4,6-trichlorophenyl)methyl (TTM-1Cz), and the widely used hole injection material, 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN). When the unpaired electron of TTM-1Cz is transferred to HAT-CN, it would be oxidized to a TTM-1Cz cation with a newly formed lowest unoccupied molecular orbital which is quite close to the highest occupied molecular orbital (HOMO) of the hole-transporting material (HTM). In this way, the TTM-1Cz cation would promote the electron extraction from the HOMO of the HTM and improve hole injection. Using TTM-1Cz-doped HAT-CN as the hole injection layer, efficient organic light-emitting diodes with extremely low voltages can be attained.

Well-Defined Nanostructured, Single-Crystalline TiO2 Electron Transport Layer for Efficient Planar Perovskite Solar Cells.

PubMed

Choi, Jongmin; Song, Seulki; Hörantner, Maximilian T; Snaith, Henry J; Park, Taiho

2016-06-28

An electron transporting layer (ETL) plays an important role in extracting electrons from a perovskite layer and blocking recombination between electrons in the fluorine-doped tin oxide (FTO) and holes in the perovskite layers, especially in planar perovskite solar cells. Dense TiO2 ETLs prepared by a solution-processed spin-coating method (S-TiO2) are mainly used in devices due to their ease of fabrication. Herein, we found that fatal morphological defects at the S-TiO2 interface due to a rough FTO surface, including an irregular film thickness, discontinuous areas, and poor physical contact between the S-TiO2 and the FTO layers, were inevitable and lowered the charge transport properties through the planar perovskite solar cells. The effects of the morphological defects were mitigated in this work using a TiO2 ETL produced from sputtering and anodization. This method produced a well-defined nanostructured TiO2 ETL with an excellent transmittance, single-crystalline properties, a uniform film thickness, a large effective area, and defect-free physical contact with a rough substrate that provided outstanding electron extraction and hole blocking in a planar perovskite solar cell. In planar perovskite devices, anodized TiO2 ETL (A-TiO2) increased the power conversion efficiency by 22% (from 12.5 to 15.2%), and the stabilized maximum power output efficiency increased by 44% (from 8.9 to 12.8%) compared with S-TiO2. This work highlights the importance of the ETL geometry for maximizing device performance and provides insights into achieving ideal ETL morphologies that remedy the drawbacks observed in conventional spin-coated ETLs.

Detailed line shape analysis of the C KVV Auger peak of two carbon allotropes measured using a time of flight positron annihilation induced Auger electron spectrometer

NASA Astrophysics Data System (ADS)

Fairchild, A. J.; Chirayath, V. A.; Chrysler, M. D.; Gladen, R. W.; Imam, S. K.; Koymen, A. R.; Weiss, A. H.

We report a detailed line shape analysis of the positron induced C KVV Auger line shape from highly oriented pyrolytic graphite (HOPG) and a single layer of graphene grown on polycrystalline Cu. A model consisting of the self-fold of the one-electron density of states including terms for hole-hole interactions, charge screening effects, and intrinsic loss mechanisms is compared to experimental C KVV line shapes measured using a positron induced Auger electron spectrometer (PAES). In traditional Auger spectroscopies which use an electron or photon to initiate the Auger process, extracting the relatively small Auger signal from the large secondary background can be quite difficult. Using a very low energy positron beam to create the core hole through an anti-matter matter annihilation entirely eliminates this background. Additionally, PAES has sensitivity to the top most atomic layer since the positron becomes trapped in an image potential well at the surface before annihilation. Therefore, the PAES signal from a single layer of graphene on polycrystalline Cu is primarily from the graphene overlayer with small contributions from the Cu substrate while the PAES signal from HOPG can be viewed as a single graphene layer with a graphite substrate. The influence of these two substrates on C KVV line shape is discussed. This work was supported by NSF Grant No. DMR 1508719 and DMR 1338130.

Bulk-heterojunction organic solar cells sandwiched by solution processed molybdenum oxide and titania nanosheet layers

NASA Astrophysics Data System (ADS)

Itoh, Eiji; Goto, Yoshinori; Fukuda, Katsutoshi

2014-02-01

The contributions of ultrathin titania nanosheet (TN) crystallites were studied in both an inverted bulk-heterojunction (BHJ) cell in an indium-tin oxide (ITO)/titania nanosheet (TN)/poly(3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methylester (PCBM) active layer/MoOx/Ag multilayered photovoltaic device and a conventional BHJ cell in ITO/MoOx/P3HT:PCBM active layer/TN/Al multilayered photovoltaic device. The insertion of only one or two layers of poly(diallyldimethylammonium chloride) (PDDA) and TN multilayered film prepared by the layer-by-layer deposition technique effectively decreased the leakage current and increased the open circuit voltage (VOC), fill factor (FF), and power conversion efficiency (η). The conventional cell sandwiched between a solution-processed, partially crystallized molybdenum oxide hole-extracting buffer layer and a TN electron extracting buffer layer showed comparable cell performance to a device sandwiched between vacuum-deposited molybdenum oxide and TN layers, whereas the inverted cell with solution-processed molybdenum oxide showed a poorer performance probably owing to the increment in the leakage current across the film. The abnormal S-shaped curves observed in the inverted BHJ cell above VOC disappeared with the use of a polyfluorene-based cationic semiconducting polymer as a substitute for an insulating PDDA film, resulting in the improved cell performance.

Understanding the Effects of a High Surface Area Nanostructured Indium Tin Oxide Electrode on Organic Solar Cell Performance.

PubMed

Cao, Bing; He, Xiaoming; Sorge, Jason B; Lalany, Abeed; Ahadi, Kaveh; Afshar, Amir; Olsen, Brian C; Hauger, Tate C; Mobarok, Md Hosnay; Li, Peng; Cadien, Kenneth C; Brett, Michael J; Luber, Erik J; Buriak, Jillian M

2017-11-08

Organic solar cells (OSCs) are a complex assembly of disparate materials, each with a precise function within the device. Typically, the electrodes are flat, and the device is fabricated through a layering approach of the interfacial layers and photoactive materials. This work explores the integration of high surface area transparent electrodes to investigate the possible role(s) a three-dimensional electrode could take within an OSC, with a BHJ composed of a donor-acceptor combination with a high degree of electron and hole mobility mismatch. Nanotree indium tin oxide (ITO) electrodes were prepared via glancing angle deposition, structures that were previously demonstrated to be single-crystalline. A thin layer of zinc oxide was deposited on the ITO nanotrees via atomic layer deposition, followed by a self-assembled monolayer of C 60 -based molecules that was bound to the zinc oxide surface through a carboxylic acid group. Infiltration of these functionalized ITO nanotrees with the photoactive layer, the bulk heterojunction comprising PC 71 BM and a high hole mobility low band gap polymer (PDPPTT-T-TT), led to families of devices that were analyzed for the effect of nanotree height. When the height was varied from 0 to 50, 75, 100, and 120 nm, statistically significant differences in device performance were noted with the maximum device efficiencies observed with a nanotree height of 75 nm. From analysis of these results, it was found that the intrinsic mobility mismatch between the donor and acceptor phases could be compensated for when the electron collection length was reduced relative to the hole collection length, resulting in more balanced charge extraction and reduced recombination, leading to improved efficiencies. However, as the ITO nanotrees increased in height and branching, the decrease in electron collection length was offset by an increase in hole collection length and potential deleterious electric field redistribution effects, resulting in decreased efficiency.

Method of making organic light emitting devices

DOEpatents

Shiang, Joseph John [Niskayuna, NY; Janora, Kevin Henry [Schenectady, NY; Parthasarathy, Gautam [Saratoga Springs, NY; Cella, James Anthony [Clifton Park, NY; Chichak, Kelly Scott [Clifton Park, NY

2011-03-22

The present invention provides a method for the preparation of organic light-emitting devices comprising a bilayer structure made by forming a first film layer comprising an electroactive material and an INP precursor material, and exposing the first film layer to a radiation source under an inert atmosphere to generate an interpenetrating network polymer composition comprising the electroactive material. At least one additional layer is disposed on the reacted first film layer to complete the bilayer structure. The bilayer structure is comprised within an organic light-emitting device comprising standard features such as electrodes and optionally one or more additional layers serving as a bipolar emission layer, a hole injection layer, an electron injection layer, an electron transport layer, a hole transport layer, exciton-hole transporting layer, exciton-electron transporting layer, a hole transporting emission layer, or an electron transporting emission layer.

Use of interfacial layers to prolong hole lifetimes in hematite probed by ultrafast transient absorption spectroscopy

NASA Astrophysics Data System (ADS)

Paradzah, Alexander T.; Diale, Mmantsae; Maabong, Kelebogile; Krüger, Tjaart P. J.

2018-04-01

Hematite is a widely investigated material for applications in solar water oxidation due primarily to its small bandgap. However, full realization of the material continues to be hampered by fast electron-hole recombination rates among other weaknesses such as low hole mobility, short hole diffusion length and low conductivity. To address the problem of fast electron-hole recombination, researchers have resorted to growth of nano-structured hematite, doping and use of under-layers. Under-layer materials enhance the photo-current by minimising electron-hole recombination through suppressing of back electron flow from the substrate, such as fluorine-doped tin oxide (FTO), to hematite. We have carried out ultrafast transient absorption spectroscopy on hematite in which Nb2O5 and SnO2 materials were used as interfacial layers to enhance hole lifetimes. The transient absorption data was fit with four different lifetimes ranging from a few hundred femtoseconds to a few nanoseconds. We show that the electron-hole recombination is slower in samples where interfacial layers are used than in pristine hematite. We also develop a model through target analysis to illustrate the effect of under-layers on electron-hole recombination rates in hematite thin films.

Enhancement of carrier lifetimes in type-II quantum dot/quantum well hybrid structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Couto, O. D. D., E-mail: odilon@ifi.unicamp.br; Almeida, P. T. de; Santos, G. E. dos

We investigate optical transitions and carrier dynamics in hybrid structures containing type-I GaAs/AlGaAs quantum wells (QWs) and type-II GaSb/AlGaAs quantum dots (QDs). We show that the optical recombination of photocreated electrons confined in the QWs with holes in the QDs and wetting layer can be modified according to the QW/QD spatial separation. In particular, for low spacer thicknesses, the QW optical emission can be suppressed due to the transference of holes from the QW to the GaSb layer, favoring the optical recombination of spatially separated carriers, which can be useful for optical memory and solar cell applications. Time-resolved photoluminescence (PL)more » measurements reveal non-exponential recombination dynamics. We demonstrate that the PL transients can only be quantitatively described by considering both linear and quadratic terms of the carrier density in the bimolecular recombination approximation for type-II semiconductor nanostructures. We extract long exciton lifetimes from 700 ns to 5 μs for QDs depending on the spacer layer thickness.« less

Hole-Transport Materials for Perovskite Solar Cells.

PubMed

Calió, Laura; Kazim, Samrana; Grätzel, Michael; Ahmad, Shahzada

2016-11-14

The pressure to move towards renewable energy has inspired researchers to look for ideas in photovoltaics that may lead to a major breakthrough. Recently the use of perovskites as a light harvester has lead to stunning progress. The power conversion efficiency of perovskite solar cells is now approaching parity (>22 %) with that of the established technology which took decades to reach this level of performance. The use of a hole transport material (HTM) remains indispensable in perovskite solar cells. Perovskites can conduct holes, but they are present at low levels, and for efficient charge extraction a HTM layer is a prerequisite. Herein we provide an overview of the diverse types of HTM available, from organic to inorganic, in the hope of encouraging further research and the optimization of these materials. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Sol-gel-processed yttrium-doped NiO as hole transport layer in inverted perovskite solar cells for enhanced performance

NASA Astrophysics Data System (ADS)

Hu, Zijun; Chen, Da; Yang, Pan; Yang, Lijun; Qin, Laishun; Huang, Yuexiang; Zhao, Xiaochong

2018-05-01

In this work, high-performance inverted planar perovskite solar cells (PSCs) using sol-gel processed Y-doped NiO thin films as hole transport layer (HTL) were demonstrated. Y-doped NiO thin films containing different Y doping concentrations were successfully prepared through a simple sol-gel process. The Y doping could significantly improve the electrical conductivity of NiO thin film, and the photovoltaic performance of Y-doped NiO HTL-based PSC devices outperformed that of the pristine NiO HTL-based device. Notably, the PSC using a 5%Y-NiO HTL exhibited the champion performance with an open-circuit voltage (Voc) of 1.00 V, a short circuit current density (Jsc) of 23.82 mA cm-2, a fill factor (FF) of 68% and a power conversion efficiency (PCE) of 16.31%, resulting in a 27.62% enhancement in PCE in comparison with the NiO device. The enhanced performance of the Y-doped NiO device could be attributed to the improved hole mobility, the high quality compact active layer morphology, the more efficient charge extraction from perovskite absorber as well as the lower recombination probability of charge carriers. Thus, this work provides a simple and effective approach to improve the electrical conductivity of p-type NiO thin films for use as a promising HTL in high performance PSCs.

Structure-driven turbulence in ``No man's Land''

NASA Astrophysics Data System (ADS)

Kosuga, Yusuke; Diamond, Patrick

2012-10-01

Structures are often observed in many physical systems. In tokamaks, for example, such structures are observed as density blobs and holes. Such density blobs and holes are generated at the tokamak edge, where strong gradient perturbations generate an outgoing blob and an incoming hole. Since density holes can propagate from the edge to the core, such structures may play an important role in understanding the phenomenology of the edge-core coupling region, so-called ``No Man's Land.'' In this work, we discuss the dynamics of such structures in real space. In particular, we consider the dynamics of density blobs and holes in the Hasegawa-Wakatani system. Specific questions addressed here include: i) how these structures extract free energy and enhance transport? how different is the relaxation driven by such structures from that driven by linear drift waves? ii) how these structures interact with shear flows? In particular, how these structures interact with a shear layer, which can absorb structures resonantly? iii) how can we calculate the coupled evolution of structures and shear flows? Implications for edge-core coupling problem are discussed as well.

Inverted bulk-heterojunction organic solar cells with the transfer-printed anodes and low-temperature-processed ultrathin buffer layers

NASA Astrophysics Data System (ADS)

Itoh, Eiji; Sakai, Shota; Fukuda, Katsutoshi

2018-03-01

We studied the effects of a hole buffer layer [molybdenum oxide (MoO3) and natural copper oxide layer] and a low-temperature-processed electron buffer layer on the performance of inverted bulk-heterojunction organic solar cells in a device consisting of indium-tin oxide (ITO)/poly(ethylene imine) (PEI)/titanium oxide nanosheet (TiO-NS)/poly(3-hexylthiopnehe) (P3HT):phenyl-C61-butyric acid methylester (PCBM)/oxide/anode (Ag or Cu). The insertion of ultrathin TiO-NS (˜1 nm) and oxide hole buffer layers improved the open circuit voltage V OC, fill factor, and rectification properties owing to the effective hole blocking and electron transport properties of ultrathin TiO-NS, and to the enhanced work function difference between TiO-NS and the oxide hole buffer layer. The insertion of the TiO-NS contributed to the reduction in the potential barrier at the ITO/PEI/TiO-NS/active layer interface for electrons, and the insertion of the oxide hole buffer layer contributed to the reduction in the potential barrier for holes. The marked increase in the capacitance under positive biasing in the capacitance-voltage characteristics revealed that the combination of TiO-NS and MoO3 buffer layers contributes to the selective transport of electrons and holes, and blocks counter carriers at the active layer/oxide interface. The natural oxide layer of the copper electrode also acts as a hole buffer layer owing to the increase in the work function of the Cu surface in the inverted cells. The performance of the cell with evaporated MoO3 and Cu layers that were transfer-printed to the active layer was almost comparable to that of the cell with MoO3 and Ag layers directly evaporated onto the active layer. We also demonstrated comparable device performance in the cell with all-printed MoO3 and low-temperature-processed silver nanoparticles as an anode.

Optoelectronic device with nanoparticle embedded hole injection/transport layer

DOEpatents

Wang, Qingwu [Chelmsford, MA; Li, Wenguang [Andover, MA; Jiang, Hua [Methuen, MA

2012-01-03

An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

Fabrication of PDMS through-holes using the MIMIC method and the surface treatment by atmospheric-pressure CH4/He RF plasma

NASA Astrophysics Data System (ADS)

Choi, Jongchan; Lee, Kyeong-Hwan; Yang, Sung

2011-09-01

This note presents a simple fabrication process for patterning micro through-holes in a PDMS layer by a combination of the micromolding in capillaries (MIMIC) method and the surface treatment by atmospheric-pressure CH4/He RF plasma. The fabrication process is confirmed by forming micro through-holes with various shapes including circle, C-shape, open microfluidic channel and hemisphere. All micro through-holes of various shapes in a wide range of diameters and heights are well fabricated by the proposed method. Also, a 3D micromixer containing a PDMS micro through-hole layer formed by the proposed method is built and its performance is tested as another practical demonstration of the proposed fabrication method. Therefore, we believe that the proposed fabrication process will build a PDMS micro through-hole layer in a simple and easy way and will contribute to developing highly efficient multi-layered microfluidic systems, which may require PDMS micro through-hole layers.

Inverted organic electronic and optoelectronic devices

NASA Astrophysics Data System (ADS)

Small, Cephas E.

The research and development of organic electronics for commercial application has received much attention due to the unique properties of organic semiconductors and the potential for low-cost high-throughput manufacturing. For improved large-scale processing compatibility and enhanced device stability, an inverted geometry has been employed for devices such as organic light emitting diodes and organic photovoltaic cells. These improvements are attributed to the added flexibility to incorporate more air-stable materials into the inverted device geometry. However, early work on organic electronic devices with an inverted geometry typically showed reduced device performance compared to devices with a conventional structure. In the case of organic light emitting diodes, inverted devices typically show high operating voltages due to insufficient carrier injection. Here, a method for enhancing hole injection in inverted organic electronic devices is presented. By incorporating an electron accepting interlayer into the inverted device, a substantial enhancement in hole injection efficiency was observed as compared to conventional devices. Through a detailed carrier injection study, it is determined that the injection efficiency enhancements in the inverted devices are due to enhanced charge transfer at the electron acceptor/organic semiconductor interface. A similar situation is observed for organic photovoltaic cells, in which devices with an inverted geometry show limited carrier extraction in early studies. In this work, enhanced carrier extraction is demonstrated for inverted polymer solar cells using a surface-modified ZnO-polymer composite electron-transporting layer. The insulating polymer in the composite layer inhibited aggregation of the ZnO nanoparticles, while the surface-modification of the composite interlayer improved the electronic coupling with the photoactive layer. As a result, inverted polymer solar cells with power conversion efficiencies of over 8% were obtained. To further study carrier extraction in inverted polymer solar cells, the active layer thickness dependence of the efficiency was investigated. For devices with active layer thickness < 200 nm, power conversion efficiencies over 8% was obtained. This result is important for demonstrating improved large-scale processing compatibility. Above 200 nm, significant reduction in cell efficiency were observed. A detailed study of the loss processes that contributed to the reduction in efficiency for thick-film devices are presented.

Facile preparation of porous alumina through-hole masks for sputtering by two-layer anodization

NASA Astrophysics Data System (ADS)

Yanagishita, Takashi; Masuda, Hideki

2016-08-01

Highly ordered porous alumina through-hole masks were fabricated on a substrate by combining two-layer anodization with subsequent through-holing by selective etching. This process allowed the fabrication of porous alumina masks without an increase in pore size during the etching performed for through-holing. Additionally, the process contributed to improved operability in the setting of the masks on substrates because the second anodizing layer acts as a supporting layer for the handling of the mask. The fabrication of ordered Au nanodot arrays was demonstrated as an example application of the through-hole masks obtained by the present process.

Numerical analysis of drilling hole work-hardening effects in hole-drilling residual stress measurement

NASA Astrophysics Data System (ADS)

Li, H.; Liu, Y. H.

2008-11-01

The hole-drilling strain gage method is an effective semi-destructive technique for determining residual stresses in the component. As a mechanical technique, a work-hardening layer will be formed on the surface of the hole after drilling, and affect the strain relaxation. By increasing Young's modulus of the material near the hole, the work-hardening layer is simplified as a heterogeneous annulus. As an example, two finite rectangular plates submitted to different initial stresses are treated, and the relieved strains are measured by finite element simulation. The accuracy of the measurement is estimated by comparing the simulated residual stresses with the given initial ones. The results are shown for various hardness of work-hardening layer. The influence of the relative position of the gages compared with the thickness of the work-hardening layer, and the effect of the ratio of hole diameter to work-hardening layer thickness are analyzed as well.

Management of light absorption in extraordinary optical transmission based ultra-thin-film tandem solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mashooq, Kishwar; Talukder, Muhammad Anisuzzaman, E-mail: anis@eee.buet.ac.bd

2016-05-21

Although ultra-thin-film solar cells can be attractive in reducing the cost, they suffer from low absorption as the thickness of the active layer is usually much smaller than the wavelength of incident light. Different nano-photonic techniques, including plasmonic structures, are being explored to increase the light absorption in ultra-thin-film solar cells. More than one layer of active materials with different energy bandgaps can be used in tandem to increase the light absorption as well. However, due to different amount of light absorption in different active layers, photo-generated currents in different active layers will not be the same. The current mismatchmore » between the tandem layers makes them ineffective in increasing the efficiency. In this work, we investigate the light absorption properties of tandem solar cells with two ultra-thin active layers working as two subcells and a metal layer with periodically perforated holes in-between the two subcells. While the metal layer helps to overcome the current mismatch, the periodic holes increase the absorption of incident light by helping extraordinary optical transmission of the incident light from the top to the bottom subcell, and by coupling the incident light to plasmonic and photonic modes within ultra-thin active layers. We extensively study the effects of the geometry of holes in the intermediate metal layer on the light absorption properties of tandem solar cells with ultra-thin active layers. We also study how different metals in the intermediate layer affect the light absorption; how the geometry of holes in the intermediate layer affects the absorption when the active layer materials are changed; and how the intermediate metal layer affects the collection of photo-generated electron-hole pairs at the terminals. We find that in a solar cell with 6,6-phenyl C61-butyric acid methyl ester top subcell and copper indium gallium selenide bottom subcell, if the periodic holes in the metal layer are square or polygon, total absorption remains approximately the same. However, the total absorption suffers significantly if the holes are triangle. The transmission spectra of incident light into the bottom subcell, and hence the absorption, change significantly for square and circle holes if the active materials change to cadmium selenide (CdSe) and cadmium telluride (CdTe) in the top and bottom subcells, respectively. Although the intermediate metal layer may induce electron-hole pair recombination due to surface defects, the short-circuit current density of an ultra-thin plasmonic solar cell with an intermediate metal layer with two-dimensional hole array is >9% of that of a structure without the intermediate metal layer.« less

Using a compositionally step graded hole reservoir layer with hole accelerating ability for reducing efficiency droop in GaN-based LEDs

NASA Astrophysics Data System (ADS)

Ye, Daqian; Zhang, Dongyan; Wu, Chaoyu; Wang, Duxiang; Xu, Chenke; Zhang, Jie; Huang, Meichun

2017-05-01

We presented a compositionally graded hole reservoir layers(HRL) - an AlGaN/GaN super lattice hole reservoir layer with Al mole fraction multi-step gradient from high to low (GSL-HRL) in this paper. The designed LED with compositionally step graded HRL shows comparable low operating voltage and less efficiency droop. Simulation results reveal that this graded HRL could reserve the hole effectively and the hole in HRL can be energized by the strong electric field due to the polarization caused by different Al contents AlxGa1-xN layers. Such a design makes hole travel across the p-type EBL and inject into the MQWs more efficiently and smoothly. The novel structure of HRL improves the performance of the LED significantly and gives a promising application in high power GaN-based LED in the future.

Flexible Mechanical Conveyors for Regolith Extraction and Transport

NASA Technical Reports Server (NTRS)

Walton, Otis R.; Vollmer, Hubert J.

2013-01-01

A report describes flexible mechanical conveying systems for transporting fine cohesive regolith under microgravity and vacuum conditions. They are totally enclosed, virtually dust-free, and can include enough flexibility in the conveying path to enable an expanded range of extraction and transport scenarios, including nonlinear drill-holes and excavation of enlarged subsurface openings without large entry holes. The design of the conveyors is a modification of conventional screw conveyors such that the central screw-shaft and the outer housing or conveyingtube have a degree of bending flexibility, allowing the conveyors to become nonlinear conveying systems that can convey around gentle bends. The central flexible shaft is similar to those used in common tools like a weed whacker, consisting of multiple layers of tightly wound wires around a central wire core. Utilization of compliant components (screw blade or outer wall) increases the robustness of the conveying, allowing an occasional oversized particle to pass hough the conveyor without causing a jam or stoppage

Laterally injected light-emitting diode and laser diode

DOEpatents

Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

2015-06-16

A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

Tailoring dispersion and aggregation of Au nanoparticles in the BHJ layer of polymer solar cells: plasmon effects versus electrical effects.

PubMed

Kim, Wanjung; Cha, Bong Geun; Kim, Jung Kyu; Kang, Woonggi; Kim, Eunchul; Ahn, Tae Kyu; Wang, Dong Hwan; Du, Qing Guo; Cho, Jeong Ho; Kim, Jaeyun; Park, Jong Hyeok

2014-12-01

Plasmonic effects that arise from embedding metallic nanoparticles (NPs) in polymer solar cells (PSCs) have been extensively studied. Many researchers have utilized metallic NPs in PSCs by either incorporating them into the PSC interlayers (e.g., the hole extraction and electron extraction layers) or blending them into the bulk heterojunction (BHJ) active layer. In such studies, the dispersity of the metallic NPs in each layer may vary due to both the different nature of the ligands and the amount of ligands on the metallic NPs. This in turn can produce different PSC performance parameters. Here, we systematically control the amount of attached organic ligands on Au NPs to control their dispersion behavior in the BHJ active layer of PSCs. By controlling the number of capping organic ligands on the Au NPs, the dispersity of the NPs in the BHJ layer is also controlled and the positive effects (particularly the plasmonic and electrical effects) of the Au NPs in the PSCs are investigated. From the obtained results, we find that the electrical contribution of the Au NPs is a more dominant factor for enhancing cell efficiency when compared to the plasmonic effect. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-work-function molybdenum oxide hole extraction contacts in hybrid organic–inorganic perovskite solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulz, Philip; Tiepelt, Jan O.; Christians, Jeffrey A.

2016-11-08

Here, we investigate the effect of high work function contacts in halide perovskite absorber-based photovoltaic devices. Photoemission spectroscopy measurements reveal that band bending is induced in the absorber by the deposition of the high work function molybdenum trioxide (MoO 3). We find that direct contact between MoO 3 and the perovskite leads to a chemical reaction, which diminishes device functionality. Introducing an ultrathin spiro-MeOTAD buffer layer prevents the reaction, yet the altered evolution of the energy levels in the methylammonium lead iodide (MAPbI 3) layer at the interface still negatively impacts device performance.

Expansible apparatus for removing the surface layer from a concrete object

DOEpatents

Allen, Charles H.

1979-01-01

A method and apparatus for removing the surface layer from a concrete object. The method consists of providing a hole having a circular wall in the surface layer of the object, the hole being at least as deep as the thickness of the surface layer to be removed, and applying an outward wedging pressure on the wall of the hole sufficient to spall the surface layer around the hole. By the proper spacing of an appropriate number of holes, it is possible to remove the entire surface layer from an object. The apparatus consists of an elongated tubular-shaped body having a relatively short handle with a solid wall at one end, the wall of the remainder of the body containing a plurality of evenly spaced longitudinal cuts to form a relatively long expandable section, the outer end of the expandable section having an expandable, wedge-shaped spalling edge extending from the outer surface of the wall, perpendicular to the longitudinal axis of the body, and expanding means in the body for outwardly expanding the expandable section and forcing the spalling edge into the wall of a hole with sufficient outward pressure to spall away the surface layer of concrete. The method and apparatus are particularly suitable for removing surface layers of concrete which are radioactively contaminated.

Effect of inserting a hole injection layer in organic light-emitting diodes: A numerical approach

NASA Astrophysics Data System (ADS)

Lee, Hyeongi; Hwang, Youngwook; Won, Taeyoung

2015-01-01

For investigating the effect of inserting a hole injection layer (HIL), we carried out a computational study concerning organic light-emitting diodes (OLEDs) that had a thin CuPc layer as the hole injection layer. We used S-TAD (2, 2', 7, 7'-tetrakis-(N, Ndiphenylamino)-9, 9-spirobifluoren) for the hole transfer layer, S-DPVBi (4, 4'-bis (2, 2'-diphenylvinyl)-1, 1'-spirobiphenyl) for the emission layer and Alq3 (Tris (8-hyroxyquinolinato) aluminium) for the electron transfer layer. This tri-layer device was compared with four-layer devices. To this tri-layer device, we added a thin CuPc layer, which had a 5.3 eV highest occupied molecular orbital (HOMO) level and a 3.8 eV lowest unoccupied molecular orbital (LUMO) level, as a hole injection layer, and we chose this device for Device A. Also, we varied the LUMO level or the HOMO level of the thin CuPc layer. These two devices were identified as Device C and Device D, respectively. In this paper, we simulated the carrier injection, transport and recombination in these four devices. Thereby, we showed the effect of the HIL, and we demonstrated that the characteristics of these devices were improved by adding a thin layer of CuPc between the anode and the HTL.

Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ) Solar Cells Using Different Metal Oxide Interfaces

PubMed Central

Litzov, Ivan; Brabec, Christoph J.

2013-01-01

Solution-processed inverted bulk heterojunction (BHJ) solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeOx) play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work function. This article reviews the advantages and disadvantages of the most common synthesis methods used for the wet chemical preparation of the most relevant n-type- and p-type-like MeOx interface materials consisting of binary compounds AxBy. Their performance for applications as electron transport/extraction layers (ETL/EEL) and as hole transport/extraction layers (HTL/HEL) in inverted BHJ solar cells will be reviewed and discussed. PMID:28788423

Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ) Solar Cells Using Different Metal Oxide Interfaces.

PubMed

Litzov, Ivan; Brabec, Christoph J

2013-12-10

Solution-processed inverted bulk heterojunction (BHJ) solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeO x ) play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work function. This article reviews the advantages and disadvantages of the most common synthesis methods used for the wet chemical preparation of the most relevant n -type- and p -type-like MeO x interface materials consisting of binary compounds A x B y . Their performance for applications as electron transport/extraction layers (ETL/EEL) and as hole transport/extraction layers (HTL/HEL) in inverted BHJ solar cells will be reviewed and discussed.

Minimum entropy principle-based solar cell operation without a pn-junction and a thin CdS layer to extract the holes from the emitter

NASA Astrophysics Data System (ADS)

Böer, Karl W.

2016-10-01

The solar cell does not use a pn-junction to separate electrons from holes, but uses an undoped CdS layer that is p-type inverted when attached to a p-type collector and collects the holes while rejecting the backflow of electrons and thereby prevents junction leakage. The operation of the solar cell is determined by the minimum entropy principle of the cell and its external circuit that determines the electrochemical potential, i.e., the Fermi-level of the base electrode to the operating (maximum power point) voltage. It leaves the Fermi level of the metal electrode of the CdS unchanged, since CdS does not participate in the photo-emf. All photoelectric actions are generated by the holes excited from the light that causes the shift of the quasi-Fermi levels in the generator and supports the diffusion current in operating conditions. It is responsible for the measured solar maximum power current. The open circuit voltage (Voc) can approach its theoretical limit of the band gap of the collector at 0 K and the cell increases the efficiency at AM1 to 21% for a thin-film CdS/CdTe that is given as an example here. However, a series resistance of the CdS forces a limitation of its thickness to preferably below 200 Å to avoid unnecessary reduction in efficiency or Voc. The operation of the CdS solar cell does not involve heated carriers. It is initiated by the field at the CdS/CdTe interface that exceeds 20 kV/cm that is sufficient to cause extraction of holes by the CdS that is inverted to become p-type. Here a strong doubly charged intrinsic donor can cause a negative differential conductivity that switches-on a high-field domain that is stabilized by the minimum entropy principle and permits an efficient transport of the holes from the CdTe to the base electrode. Experimental results of the band model of CdS/CdTe solar cells are given and show that the conduction bands are connected in the dark, where the electron current must be continuous, and the valence bands are connected with light where the hole currents are dominant and must be continuous through the junction. The major shifts of the bands in operating conditions are self-adjusting by a change in the junction dipole momentum.

Self-cleaning effect in high quality percussion ablating of cooling hole by picosecond ultra-short pulse laser

NASA Astrophysics Data System (ADS)

Zhao, Wanqin; Yu, Zhishui

2018-06-01

Comparing with the trepanning technology, cooling hole could be processed based on the percussion drilling with higher processing efficiency. However, it is widely believed that the ablating precision of hole is lower for percussion drilling than for trepanning, wherein, the melting spatter materials around the hole surface and the recast layer inside the hole are the two main issues for reducing the ablating precision of hole, especially for the recast layer, it can't be eliminated completely even through the trepanning technology. In this paper, the self-cleaning effect which is a particular property just for percussion ablating of holes has been presented in detail. In addition, the reasons inducing the self-cleaning effect have been discussed. At last, based on the self-cleaning effect of percussion drilling, high quality cooling hole without the melting spatter materials around the hole surface and recast layer inside the hole could be ablated in nickel-based superalloy by picosecond ultra-short pulse laser.

Children's and adults' knowledge and models of reasoning about the ozone layer and its depletion

NASA Astrophysics Data System (ADS)

Leighton, Jacqueline P.; Bisanz, Gay L.

2003-01-01

As environmental concepts, the ozone layer and ozone hole are important to understand because they can profoundly influence our health. In this paper, we examined: (a) children's and adults' knowledge of the ozone layer and its depletion, and whether this knowledge increases with age' and (b) how the 'ozone layer' and 'ozone hole' might be structured as scientific concepts. We generated a standardized set of questions and used it to interview 24 kindergarten students, 48 Grade 3 students, 24 Grade 5 students, and 24 adults in university, in Canada. An analysis of participants' responses revealed that adults have more knowledge than children about the ozone layer and ozone hole, but both adults and children exhibit little knowledge about protecting themselves from the ozone hole. Moreover, only some participants exhibited 'mental models' in their conceptual understanding of the ozone layer and ozone hole. The implications of these results for health professionals, educators, and scientists are discussed.

Room-temperature processed tin oxide thin film as effective hole blocking layer for planar perovskite solar cells

NASA Astrophysics Data System (ADS)

Tao, Hong; Ma, Zhibin; Yang, Guang; Wang, Haoning; Long, Hao; Zhao, Hongyang; Qin, Pingli; Fang, Guojia

2018-03-01

Tin oxide (SnO2) film with high mobility and good transmittance has been reported as a promising semiconductor material for high performance perovskite solar cells (PSCs). In this study, ultrathin SnO2 film synthesized by radio frequency magnetron sputtering (RFMS) method at room temperature was employed as hole blocking layer for planar PSCs. The room-temperature sputtered SnO2 film not only shows favourable energy band structure but also improves the surface topography of fluorine doped SnO2 (FTO) substrate and perovskite (CH3NH3PbI3) layer. Thus, this SnO2 hole blocking layer can efficiently promote electron transport and suppress carrier recombination. Furthermore, the best efficiency of 13.68% was obtained for planar PSC with SnO2 hole blocking layer prepared at room temperature. This research highlights the room-temperature preparation process of hole blocking layer in PSC and has a certain reference significance for the usage of flexible and low-cost substrates.

Dense Pattern Optical Multipass Cell

NASA Technical Reports Server (NTRS)

Silver, Joel A. (Inventor)

2009-01-01

A multiple pass optical cell and method comprising providing a pair of opposed cylindrical mirrors having curved axes with substantially equal focal lengths, positioning an entrance hole for introducing light into the cell and an exit hole for extracting light from the cell, wherein the entrance hole and exit hole are coextensive or non-coextensive, introducing light into the cell through the entrance hole, and extracting light from the cell through the exit hole.

Dense pattern optical multipass cell

DOEpatents

Silver, Joel A [Santa Fe, NM

2009-01-13

A multiple pass optical cell and method comprising providing a pair of opposed cylindrical mirrors having curved axes with substantially equal focal lengths, positioning an entrance hole for introducing light into the cell and an exit hole for extracting light from the cell, wherein the entrance hole and exit hole are coextensive or non-coextensive, introducing light into the cell through the entrance hole, and extracting light from the cell through the exit hole.

Benzoyl Peroxide as an Efficient Dopant for Spiro-OMeTAD in Perovskite Solar Cells.

PubMed

Liu, Qiuju; Fan, Lisheng; Zhang, Qin'e; Zhou, An'an; Wang, Baozeng; Bai, Hua; Tian, Qingyong; Fan, Bin; Zhang, Tongyi

2017-08-10

Although organic small molecule spiro-OMeTAD is widely used as a hole-transport material in perovskite solar cells, its limited electric conductivity poses a bottleneck in the efficiency improvement of perovskite solar cells. Here, a low-cost and easy-fabrication technique is developed to enhance the conductivity and hole-extraction ability of spiro-OMeTAD by doping it with commercially available benzoyl peroxide (BPO). The experimental results show that the conductivity increases several orders of magnitude, from 6.2×10 -6  S cm -1 for the pristine spiro-OMeTAD to 1.1×10 -3  S cm -1 at 5 % BPO doping and to 2.4×10 -2  S cm -1 at 15 % BPO doping, which considerably outperform the conductivity of 4.62×10 -4  S cm -1 for the currently used oxygen-doped spiro-OMeTAD. The fluorescence spectra suggest that the BPO-doped spiro-OMeTAD-OMeTAD layer is able to efficiently extract holes from CH 3 NH 3 PbI 3 and thus greatly enhances the charge transfer. The BPO-doped spiro-OMeTAD is used in the fabrication of perovskite solar cells, which exhibit enhancement in the power conversion efficiency. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

TFB:TPDSi2 interfacial layer usable in organic photovoltaic cells

DOEpatents

Marks, Iobin J [Evanston, IL; Hains, Alexander W [Evanston, IL

2011-02-15

The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode; an active organic layer comprising an electron-donating organic material and an electron-accepting organic material; and an interfacial layer formed between the anode and active organic layer, where the interfacial layer comprises a hole-transporting polymer characterized with a hole-mobility higher than that of the electron-donating organic material in the active organic layer, and a small molecule that has a high hole-mobility and is capable of crosslinking on contact with air.

Light-emitting diodes based on solution-processed nontoxic quantum dots: oxides as carrier-transport layers and introducing molybdenum oxide nanoparticles as a hole-inject layer.

PubMed

Bhaumik, Saikat; Pal, Amlan J

2014-07-23

We report fabrication and characterization of solution-processed quantum dot light-emitting diodes (QDLEDs) based on a layer of nontoxic and Earth-abundant zinc-diffused silver indium disulfide (AIZS) nanoparticles as an emitting material. In the QDLEDs fabricated on indium tin oxide (ITO)-coated glass substrates, we use layers of oxides, such as graphene oxide (GO) and zinc oxide (ZnO) nanoparticles as a hole- and electron-transport layer, respectively. In addition, we introduce a layer of MoO3 nanoparticles as a hole-inject one. We report a comparison of the characteristics of different device architectures. We show that an inverted device architecture, ITO/ZnO/AIZS/GO/MoO3/Al, yields a higher electroluminescence (EL) emission, compared to direct ones, for three reasons: (1) the GO/MoO3 layers introduce barriers for electrons to reach the Al electrode, and, similarly, the ZnO layers acts as a barrier for holes to travel to the ITO electrode; (2) the introduction of a layer of MoO3 nanoparticles as a hole-inject layer reduces the barrier height for holes and thereby balances charge injection in the inverted structure; and (3) the wide-bandgap zinc oxide next to the ITO electrode does not absorb the EL emission during its exit from the device. In the QDLEDs with oxides as carrier inject and transport layers, the EL spectrum resembles the photoluminescence emission of the emitting material (AIZS), implying that excitons are formed in the quaternary nanocrystals and decay radiatively.

Highly efficient inverted polymer solar cells based on a cross-linkable water-/alcohol-soluble conjugated polymer interlayer.

PubMed

Zhang, Kai; Zhong, Chengmei; Liu, Shengjian; Mu, Cheng; Li, Zhengke; Yan, He; Huang, Fei; Cao, Yong

2014-07-09

A cross-linkable water/alcohol soluble conjugated polymer (WSCP) material poly[9,9-bis(6'-(N,N-diethylamino)propyl)-fluorene-alt-9,9-bis(3-ethyl(oxetane-3-ethyloxy)-hexyl) fluorene] (PFN-OX) was designed. The cross-linkable nature of PFN-OX is good for fabricating inverted polymer solar cells (PSCs) with well-defined interface and investigating the detailed working mechanism of high-efficiency inverted PSCs based on poly[4,8-bis(2-ethylhexyloxyl)benzo[1,2-b:4,5-b']dithio-phene-2,6-diyl-alt-ethylhexyl-3-fluorothithieno[3,4-b]thiophene-2-carboxylate-4,6-diyl] (PTB7) and (6,6)-phenyl-C71-butyric acid methyl ester (PC71BM) blend active layer. The detailed working mechanism of WSCP materials in high-efficiency PSCs were studied and can be summarized into the following three effects: a) PFN-OX tunes cathode work function to enhance open-circuit voltage (Voc); b) PFN-OX dopes PC71BM at interface to facilitate electron extraction; and c) PFN-OX extracts electrons and blocks holes to enhance fill factor (FF). On the basis of this understanding, the hole-blocking function of the PFN-OX interlayer was further improved with addition of a ZnO layer between ITO and PFN-OX, which led to inverted PSCs with a power conversion efficiency of 9.28% and fill factor high up to 74.4%.

Influence of hole shape on sound absorption of underwater anechoic layers

NASA Astrophysics Data System (ADS)

Ye, Changzheng; Liu, Xuewei; Xin, Fengxian; Lu, Tian Jian

2018-07-01

A theoretical model is established to evaluate the sound absorption performance of underwater anechoic layers containing periodically distributed axial holes. Based on the concept for homogenized equivalent layer and on the theory of wave propagation in viscoelastic cylindrical tubes, the transfer function method is used to obtain the absorption coefficient of the anechoic layer adhered on the rigid plate. Three different types of axial holes are considered, the cylindrical, the conical and the horn shaped one. Results obtained with full finite element simulations are used to validate the model predictions. For each hole type, the vibration characteristics of the anechoic layer as well as the propagation of longitudinal and transverse waves in the layer are analyzed in detail to explore the physical mechanisms underlying its absorption performance. Furthermore, a three-dimensional finite element model for oblique incidence is developed to study the effect of hole shape at different incidence angles. The results show that two new absorption peaks appear since the oblique incidence excites two horizontal modes. Among the three hole types, the horn one achieves the best absorption performance at relatively low frequencies both in normal incidence and in oblique incidence.

[The role of BCP in electroluminescence of multilayer organic light-emitting devices].

PubMed

Deng, Zhao-Ru; Yang, Sheng-Yi; Lou, Zhi-Dong; Meng, Ling-Chuan

2009-03-01

As a hole-blocking layer, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) is usually used in blue and white light electroluminescent devices. The ability of blocking holes of BCP layer depends on its thickness, and basically holes can tunnel through thin BCP layer. In order to know the role of BCP layer in electroluminescence (EL) of multilayer organic light-emitting diodes (OLEDs), in the present paper, the authors designed a multilayer OLED ITO/NPB/BCP/Alq3 : DCJTB/Alq3/Al and investigated the influence of thickness of BCP on the EL spectra of multilayer OLEDs at different applied voltages. The experimental data show that thin BCP layer can block holes partially and tune the energy transfer between different emissive layers, and in this way, it is easy to obtain white emission, but its EL spectra will change with the applied voltages. The EL spectra of multilayer device will remain relatively stable when BCP layer is thick enough, and the holes can hardly tunnel through when the thickness of BCP layer is more than 15 nm. Furthermore, the stability of EL spectra of the multilayer OLED at different applied voltages was discussed.

Effects of Contact-Induced Doping on the Behaviors of Organic Photovoltaic Devices

DOE PAGES

Wang, Jian; Xu, Liang; Lee, Yun -Ju; ...

2015-10-09

Substrates can significantly affect the electronic properties of organic semiconductors. In this paper, we report the effects of contact-induced doping, arising from charge transfer between a high work function hole extraction layer (HEL) and the organic active layer, on organic photovoltaic device performance. Employing a high work function HEL is found to increase doping in the active layer and decrease photocurrent. Combined experimental and modeling investigations reveal that higher doping increases polaron–exciton quenching and carrier recombination within the field-free region. Consequently, there exists an optimal HEL work function that enables a large built-in field while keeping the active layer dopingmore » low. This value is found to be ~0.4 eV larger than the pinning level of the active layer material. As a result, these understandings establish a criterion for optimal design of the HEL when adapting a new active layer system and can shed light on optimizing performance in other organic electronic devices.« less

Enhanced interfacial electron transfer of inverted perovskite solar cells by introduction of CoSe into the electron-transporting-layer

NASA Astrophysics Data System (ADS)

Chen, Shanshan; Yang, Songwang; Sun, Hong; Zhang, Lu; Peng, Jiajun; Liang, Ziqi; Wang, Zhong-Sheng

2017-06-01

To improve the electron transfer at the interface between the perovskite film and the electron-transporting-material (ETM) layer, CoSe doped [6,6]-phenyl C61-butyric acid methyl ester (PCBM) is employed as the ETM layer for the inverted planar perovskite solar cell with NiO as the hole-transporting-material layer. Introduction of CoSe (5.8 wt%) into the PCBM layer improves the conductivity of the ETM layer and decreases the photoluminescence intensity, thus enhancing the interfacial electron extraction and reducing the electron transfer resistance at the perovskite/ETM interface. As a consequence, the power conversion efficiency is enhanced from 11.43% to 14.91% by 30% due to the noted increases in short-circuit current density from 17.95 mA cm-2 to 19.85 mA cm-2 and fill factor from 0.60 to 0.70. This work provides a new strategy to improve the performance of inverted perovskite solar cells.

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.

2017-01-10

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

Plasmonically sensitized metal-oxide electron extraction layers for organic solar cells.

PubMed

Trost, S; Becker, T; Zilberberg, K; Behrendt, A; Polywka, A; Heiderhoff, R; Görrn, P; Riedl, T

2015-01-16

ZnO and TiOx are commonly used as electron extraction layers (EELs) in organic solar cells (OSCs). A general phenomenon of OSCs incorporating these metal-oxides is the requirement to illuminate the devices with UV light in order to improve device characteristics. This may cause severe problems if UV to VIS down-conversion is applied or if the UV spectral range (λ < 400 nm) is blocked to achieve an improved device lifetime. In this work, silver nanoparticles (AgNP) are used to plasmonically sensitize metal-oxide based EELs in the vicinity (1-20 nm) of the metal-oxide/organic interface. We evidence that plasmonically sensitized metal-oxide layers facilitate electron extraction and afford well-behaved highly efficient OSCs, even without the typical requirement of UV exposure. It is shown that in the plasmonically sensitized metal-oxides the illumination with visible light lowers the WF due to desorption of previously ionosorbed oxygen, in analogy to the process found in neat metal oxides upon UV exposure, only. As underlying mechanism the transfer of hot holes from the metal to the oxide upon illumination with hν < Eg is verified. The general applicability of this concept to most common metal-oxides (e.g. TiOx and ZnO) in combination with different photoactive organic materials is demonstrated.

Plasmonically sensitized metal-oxide electron extraction layers for organic solar cells

PubMed Central

Trost, S.; Becker, T.; Zilberberg, K.; Behrendt, A.; Polywka, A.; Heiderhoff, R.; Görrn, P.; Riedl, T.

2015-01-01

ZnO and TiOx are commonly used as electron extraction layers (EELs) in organic solar cells (OSCs). A general phenomenon of OSCs incorporating these metal-oxides is the requirement to illuminate the devices with UV light in order to improve device characteristics. This may cause severe problems if UV to VIS down-conversion is applied or if the UV spectral range (λ < 400 nm) is blocked to achieve an improved device lifetime. In this work, silver nanoparticles (AgNP) are used to plasmonically sensitize metal-oxide based EELs in the vicinity (1–20 nm) of the metal-oxide/organic interface. We evidence that plasmonically sensitized metal-oxide layers facilitate electron extraction and afford well-behaved highly efficient OSCs, even without the typical requirement of UV exposure. It is shown that in the plasmonically sensitized metal-oxides the illumination with visible light lowers the WF due to desorption of previously ionosorbed oxygen, in analogy to the process found in neat metal oxides upon UV exposure, only. As underlying mechanism the transfer of hot holes from the metal to the oxide upon illumination with hν < Eg is verified. The general applicability of this concept to most common metal-oxides (e.g. TiOx and ZnO) in combination with different photoactive organic materials is demonstrated. PMID:25592174

Black Phosphorus Quantum Dots for Hole Extraction of Typical Planar Hybrid Perovskite Solar Cells.

PubMed

Chen, Wei; Li, Kaiwen; Wang, Yao; Feng, Xiyuan; Liao, Zhenwu; Su, Qicong; Lin, Xinnan; He, Zhubing

2017-02-02

Black phosphorus, famous as two-dimensional (2D) materials, shows such excellent properties for optoelectronic devices such as tunable direct band gap, extremely high hole mobility (300-1000 cm 2 /(V s)), and so forth. In this Letter, facile processed black phosphorus quantum dots (BPQDs) were successfully applied to enhance hole extraction at the anode side of the typical p-i-n planar hybrid perovskite solar cells, which remarkably improved the performance of devices with photon conversion efficiency ramping up from 14.10 to 16.69%. Moreover, more detailed investigations by c-AFM, SKPM, SEM, hole-only devices, and photon physics measurements discover further the hole extraction effect and work mechanism of the BPQDs, such as nucleation assistance for the growth of large grain size perovskite crystals, fast hole extraction, more efficient hole transfer, and suppression of energy-loss recombination at the anode interface. This work definitely paves the way for discovering more and more 2D materials with high electronic properties to be used in photovoltaics and optoelectronics.

Bifacial Modified Charge Transport Materials for Highly Efficient and Stable Inverted Perovskite Solar Cells.

PubMed

Li, Xin; Zhao, Xingyue; Hao, Feng; Yin, Xuewen; Yao, Zhibo; Zhou, Yu; Shen, Heping; Lin, Hong

2018-05-30

Significant efforts have been devoted to enhancing both the performance and long-term stability of lead halide perovskite solar cells (PSCs) to promote their practical application. In this context, a self-assembled monolayer composed of a dye molecule is demonstrated for the first time to be efficient in passivating the surface of the hole transport layer, NiO x , in the p-i-n PSCs through multiple functions, including the minimization of energy-level offset, reducing surface trap states, and enhancing wetting between NiO x and perovskite layers coupled with increasing perovskite crystallinity. Consequently, the dye monolayer has sufficiently improved the hole extraction efficiency and suppressed the charge recombination, validated by steady and transient photoluminescence measurements and the electrochemical impedance analysis. Concurrently, a mixed layer of BaSnO 3 nanoparticles and [6,6]-phenyl-C 61 -butyric acid methyl (PCBM) (barium stannate (BSO)/PCBM) was exploited as an efficient electron transport layer, resulting in superior electron transport properties and correspondingly excellent device stability. By incorporating these bifacial modifications, the device performance of the inverted PSC was propelled to 16.2%, compared with 14.0% for that without any interfacial and compositional engineering. Benefiting from the excellent crystallinity of the perovskite through dye passivation and the blocking of moisture, oxygen, and ion migration by using the hybrid BSO/PCBM layer, over 90% of the initial power conversion efficiency has been preserved for the device after exposure to ambient air for 650 h.

Graphene interfaced perovskite solar cells: Role of graphene flake size

NASA Astrophysics Data System (ADS)

Sakorikar, Tushar; Kavitha, M. K.; Tong, Shi Wun; Vayalamkuzhi, Pramitha; Loh, Kian Ping; Jaiswal, Manu

2018-04-01

Graphene interfaced inverted planar heterojunction perovskite solar cells are fabricated by facile solution method and studied its potential as hole conducting layer. Reduced graphene oxide (rGO) with small and large flake size and Polyethylenedioxythiophene:polystyrene sulfonate (PEDOT:PSS) are utilized as hole conducting layers in different devices. For the solar cell employing PEDOT:PSS as hole conducting layer, 3.8 % photoconversion efficiency is achieved. In case of solar cells fabricated with rGO as hole conducting layer, the efficiency of the device is strongly dependent on flake size. With all other fabrication conditions kept constant, the efficiency of graphene-interfaced solar cell improves by a factor of 6, by changing the flake size of graphene oxide. We attribute this effect to uniform coverage of graphene layer and improved electrical percolation network.

Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering.

PubMed

Zhang, Zi-Hui; Ju, Zhengang; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Kyaw, Zabu; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-04-15

The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes have to climb over the energy barrier generated at the p-AlGaN/p-GaN interface before entering the quantum wells. In this work, to address this problem, we report the enhancement of hole injection efficiency by manipulating the hole transport mechanism through insertion of a thin GaN layer of 1 nm into the p-AlGaN EBL and propose an AlGaN/GaN/AlGaN-type EBL outperforming conventional AlGaN EBLs. Here, the position of the inserted thin GaN layer relative to the p-GaN region is found to be the key to enhancing the hole injection efficiency. InGaN/GaN LEDs with the proposed p-type AlGaN/GaN/AlGaN EBL have demonstrated substantially higher optical output power and external quantum efficiency.

Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices

DOEpatents

Alivisatos, A. Paul; Colvin, Vickie

1996-01-01

An electroluminescent device is described, as well as a method of making same, wherein the device is characterized by a semiconductor nanocrystal electron transport layer capable of emitting visible light in response to a voltage applied to the device. The wavelength of the light emitted by the device may be changed by changing either the size or the type of semiconductor nanocrystals used in forming the electron transport layer. In a preferred embodiment the device is further characterized by the capability of emitting visible light of varying wavelengths in response to changes in the voltage applied to the device. The device comprises a hole processing structure capable of injecting and transporting holes, and usually comprising a hole injecting layer and a hole transporting layer; an electron transport layer in contact with the hole processing structure and comprising one or more layers of semiconductor nanocrystals; and an electron injecting layer in contact with the electron transport layer for injecting electrons into the electron transport layer. The capability of emitting visible light of various wavelengths is principally based on the variations in voltage applied thereto, but the type of semiconductor nanocrystals used and the size of the semiconductor nanocrystals in the layers of semiconductor nanometer crystals may also play a role in color change, in combination with the change in voltage.

Aluminum-nanodisc-induced collective lattice resonances: Controlling the light extraction in organic light emitting diodes

NASA Astrophysics Data System (ADS)

Auer-Berger, Manuel; Tretnak, Veronika; Wenzl, Franz-Peter; Krenn, Joachim R.; List-Kratochvil, Emil J. W.

2017-10-01

We examine aluminum-nanodisc-induced collective lattice resonances as a means to enhance the efficiency of organic light emitting diodes. Thus, nanodisc arrays were embedded in the hole transporting layer of a solution-processed phosphorescent organic blue-light emitting diode. Through extinction spectroscopy, we confirm the emergence of array-induced collective lattice resonances within the organic light emitting diode. Through finite-difference time domain simulations, we show that the collective lattice resonances yield an enhancement of the electric field intensity within the emissive layer. The effectiveness for improving the light generation and light outcoupling is demonstrated by electro-optical characterization, realizing a gain in a current efficiency of 35%.

Dopant-Free Tetrakis-Triphenylamine Hole Transporting Material for Efficient Tin-Based Perovskite Solar Cells.

PubMed

Ke, Weijun; Priyanka, Pragya; Vegiraju, Sureshraju; Stoumpos, Constantinos C; Spanopoulos, Ioannis; Soe, Chan Myae Myae; Marks, Tobin J; Chen, Ming-Chou; Kanatzidis, Mercouri G

2018-01-10

Developing dopant-free hole transporting layers (HTLs) is critical in achieving high-performance and robust state-of-the-art perovskite photovoltaics, especially for the air-sensitive tin-based perovskite systems. The commonly used HTLs require hygroscopic dopants and additives for optimal performance, which adds extra cost to manufacturing and limits long-term device stability. Here we demonstrate the use of a novel tetrakis-triphenylamine (TPE) small molecule prepared by a facile synthetic route as a superior dopant-free HTL for lead-free tin-based perovskite solar cells. The best-performing tin iodide perovskite cells employing the novel mixed-cation ethylenediammonium/formamidinium with the dopant-free TPE HTL achieve a power conversion efficiency as high as 7.23%, ascribed to the HTL's suitable band alignment and excellent hole extraction/collection properties. This efficiency is one of the highest reported so far for tin halide perovskite systems, highlighting potential application of TPE HTL material in low-cost high-performance tin-based perovskite solar cells.

Transparent electrodes in silicon heterojunction solar cells: Influence on contact passivation

DOE PAGES

Tomasi, Andrea; Sahli, Florent; Seif, Johannes Peter; ...

2015-10-26

Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solarmore » cells. As a result, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.« less

Transparent electrodes in silicon heterojunction solar cells: Influence on contact passivation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tomasi, Andrea; Sahli, Florent; Seif, Johannes Peter

Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solarmore » cells. As a result, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.« less

Universal optimal hole-doping concentration in single-layer high-temperature cuprate superconductors

NASA Astrophysics Data System (ADS)

Honma, T.; Hor, P. H.

2006-09-01

We argue that in cuprate physics there are two types, hole content per CuO2 plane (Ppl) and the corresponding hole content per unit volume (P3D), of hole-doping concentrations for addressing physical properties that are two dimensional (2D) and three dimensional (3D) in nature, respectively. We find that the superconducting transition temperature (Tc) varies systematically with P3D as a superconducting 'dome' with a universal optimal hole-doping concentration of P3Dopt = 1.6 × 1021 cm-3 for single-layer high-temperature superconductors. We suggest that P3Dopt determines the upper bound of the electronic energy of underdoped single-layer high-Tc cuprates.

The Hole in the Ozone Layer.

ERIC Educational Resources Information Center

Hamers, Jeanne S.; Jacob, Anthony T.

This document contains information on the hole in the ozone layer. Topics discussed include properties of ozone, ozone in the atmosphere, chlorofluorocarbons, stratospheric ozone depletion, effects of ozone depletion on life, regulation of substances that deplete the ozone layer, alternatives to CFCs and Halons, and the future of the ozone layer.…

Atomic Layer Deposition of TiO2 for a High-Efficiency Hole-Blocking Layer in Hole-Conductor-Free Perovskite Solar Cells Processed in Ambient Air.

PubMed

Hu, Hang; Dong, Binghai; Hu, Huating; Chen, Fengxiang; Kong, Mengqin; Zhang, Qiuping; Luo, Tianyue; Zhao, Li; Guo, Zhiguang; Li, Jing; Xu, Zuxun; Wang, Shimin; Eder, Dominik; Wan, Li

2016-07-20

In this study we design and construct high-efficiency, low-cost, highly stable, hole-conductor-free, solid-state perovskite solar cells, with TiO2 as the electron transport layer (ETL) and carbon as the hole collection layer, in ambient air. First, uniform, pinhole-free TiO2 films of various thicknesses were deposited on fluorine-doped tin oxide (FTO) electrodes by atomic layer deposition (ALD) technology. Based on these TiO2 films, a series of hole-conductor-free perovskite solar cells (PSCs) with carbon as the counter electrode were fabricated in ambient air, and the effect of thickness of TiO2 compact film on the device performance was investigated in detail. It was found that the performance of PSCs depends on the thickness of the compact layer due to the difference in surface roughness, transmittance, charge transport resistance, electron-hole recombination rate, and the charge lifetime. The best-performance devices based on optimized TiO2 compact film (by 2000 cycles ALD) can achieve power conversion efficiencies (PCEs) of as high as 7.82%. Furthermore, they can maintain over 96% of their initial PCE after 651 h (about 1 month) storage in ambient air, thus exhibiting excellent long-term stability.

Internal retinal layer thickness and macular migration after internal limiting membrane peeling in macular hole surgery.

PubMed

Faria, Mun Y; Ferreira, Nuno P; Mano, Sofia; Cristóvao, Diana M; Sousa, David C; Monteiro-Grillo, Manuel E

2018-05-01

To provide a spectral-domain optical coherence tomography (SD-OCT)-based analysis of retinal layers thickness and nasal displacement of closed macular hole after internal limiting membrane peeling in macular hole surgery. In this nonrandomized prospective interventional study, 36 eyes of 32 patients were subjected to pars plana vitrectomy and 3.5 mm diameter internal limiting membrane (ILM) peeling for idiopathic macular hole (IMH). Nasal and temporal internal retinal layer thickness were assessed with SD-OCT. Each scan included optic disc border so that distance between optic disc border and fovea were measured. Thirty-six eyes had a successful surgery with macular hole closure. Total nasal retinal thickening (p<0.001) and total temporal retinal thinning (p<0.0001) were observed. Outer retinal layers increased thickness after surgery (nasal p<0.05 and temporal p<0.01). Middle part of inner retinal layers (mIRL) had nasal thickening (p<0.001) and temporal thinning (p<0.05). The mIRL was obtained by deducting ganglion cell layer (GCL) and retinal nerve fiber layer (RNFL) thickness from overall thickness of the inner retinal layer. Papillofoveal distance was shorter after ILM peeling in macular hole surgery (3,651 ± 323 μm preoperatively and 3,361 ± 279 μm at 6 months; p<0.0001). Internal limiting membrane peel is associated with important alteration in inner retinal layer architecture, with thickening of mIRL and shortening of papillofoveal distance. These factors may contribute to recovery of disrupted foveal photoreceptor and vision improvement after IMH closure.

Performance Enhancement of Organic Light-Emitting Diodes Using Electron-Injection Materials of Metal Carbonates

NASA Astrophysics Data System (ADS)

Shin, Jong-Yeol; Kim, Tae Wan; Kim, Gwi-Yeol; Lee, Su-Min; Shrestha, Bhanu; Hong, Jin-Woong

2016-05-01

Performance of organic light-emitting diodes was investigated depending on the electron-injection materials of metal carbonates (Li2CO3 and Cs2CO3 ); and number of layers. In order to improve the device efficiency, two types of devices were manufactured by using the hole-injection material (Teflon-amorphous fluoropolymer -AF) and electron-injection materials; one is a two-layer reference device ( ITO/Teflon-AF/Alq3/Al ) and the other is a three-layer device (ITO/Teflon-AF/Alq3/metal carbonate/Al). From the results of the efficiency for the devices with hole-injection layer and electron-injection layer, it was found that the electron-injection layer affects the electrical properties of the device more than the hole-injection layer. The external-quantum efficiency for the three-layer device with Li2CO3 and Cs2CO3 layer is improved by approximately six and eight times, respectively, compared with that of the two-layer reference device. It is thought that a use of electron-injection layer increases recombination rate of charge carriers by the active injection of electrons and the blocking of holes.

Comparative Aging Study of Organic Solar Cells Utilizing Polyaniline and PEDOT:PSS as Hole Transport Layers.

PubMed

Abdulrazzaq, Omar; Bourdo, Shawn E; Woo, Myungwu; Saini, Viney; Berry, Brian C; Ghosh, Anindya; Biris, Alexandru S

2015-12-23

The aging effect on P3HT:PCBM organic solar cells was investigated with camphorsulfonic doped polyaniline (PANI:CSA) or poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) used as the hole transport layer (HTL). The cells were encapsulated and exposed to a continuous normal atmosphere on a dark shelf and then characterized intermittently for more than two years. The photovoltaic results revealed that the cells with PSS HTL showed better initial results than the cells with PANI:CSA HTL. Over time, PSS-based cells exhibited faster degradation than PANI:CSA-based cells, where the average efficiency of six cells dropped to zero in less than one and a half years. On the other hand, PANI:CSA-based cells exhibited a much more stable performance with an average efficiency drop of only 15% of their initial values after one and a half years and 63% after two years. A single-diode model was utilized to fit the experimental data with the theoretical curve to extract the diode parameters, such as the ideality factor, to explain the effect of aging on the diode's performance.

Tin doped indium oxide anodes with artificially controlled nano-scale roughness using segregated Ag nanoparticles for organic solar cells

NASA Astrophysics Data System (ADS)

Kim, Hyo-Joong; Ko, Eun-Hye; Noh, Yong-Jin; Na, Seok-In; Kim, Han-Ki

2016-09-01

Nano-scale surface roughness in transparent ITO films was artificially formed by sputtering a mixed Ag and ITO layer and wet etching of segregated Ag nanoparticles from the surface of the ITO film. Effective removal of self-segregated Ag particles from the grain boundaries and surface of the crystalline ITO film led to a change in only the nano-scale surface morphology of ITO film without changes in the sheet resistance and optical transmittance. A nano-scale rough surface of the ITO film led to an increase in contact area between the hole transport layer and the ITO anode, and eventually increased the hole extraction efficiency in the organic solar cells (OSCs). The heterojunction OSCs fabricated on the ITO anode with a nano-scale surface roughness exhibited a higher power conversion efficiency of 3.320%, than that (2.938%) of OSCs made with the reference ITO/glass. The results here introduce a new method to improve the performance of OSCs by simply modifying the surface morphology of the ITO anodes.

Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns

NASA Astrophysics Data System (ADS)

Miyano, Yumiko; Narasaki, Ryota; Ichikawa, Takashi; Fukumoto, Atsushi; Aiso, Fumiki; Tamaoki, Naoki

2018-06-01

A multiscale simulation model is developed for optimizing the parameters of SiO2 plasma-enhanced atomic layer deposition of high-aspect-ratio hole patterns in three-dimensional (3D) stacked memory. This model takes into account the diffusion of a precursor in a reactor, that in holes, and the adsorption onto the wafer. It is found that the change in the aperture ratio of the holes on the wafer affects the concentration of the precursor near the top of the wafer surface, hence the deposition profile in the hole. The simulation results reproduced well the experimental results of the deposition thickness for the various hole aperture ratios. By this multiscale simulation, we can predict the deposition profile in a high-aspect-ratio hole pattern in 3D stacked memory. The atomic layer deposition parameters for conformal deposition such as precursor feeding time and partial pressure of precursor for wafers with various hole aperture ratios can be estimated.

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

DOEpatents

Simpson, Lin Jay

2015-07-28

Thin film electronic devices (or stacks integrated with a substrate) that include a permeation barrier formed of a thin layer of metal that provides a light transmitting and electrically conductive layer, wherein the electrical conductive layer is formed on a surface of the substrate or device layer such as a transparent conducting material layer with pin holes or defects caused by manufacturing and the thin layer of metal is deposited on the conductive layer and formed from a self-healing metal that forms self-terminating oxides. A permeation plug or block is formed in or adjacent to the thin film of metal at or proximate to the pin holes to block further permeation of contaminants through the pin holes.

Red phosphorescent organic light-emitting diodes based on the simple structure.

PubMed

Seo, Ji Hyun; Lee, Seok Jae; Kim, Bo Young; Choi, Eun Young; Han, Wone Keun; Lee, Kum Hee; Yoon, Seung Soo; Kim, Young Kwan

2012-05-01

We demonstrated that the simple layered red phosphorescent organic light-emitting diodes (OLEDs) are possible to have high efficiency, low driving voltage, stable roll-off efficiency, and pure emission color without hole injection and transport layers. We fabricated the OLEDs with a structure of ITO/CBP doped with Ir(pq)2(acac)/BPhen/Liq/Al, where the doping concentration of red dopant, Ir(pq)2(acac), was varied from 4% to 20%. As a result, the quantum efficiencies of 13.4, 11.2, 16.7, 10.8 and 9.8% were observed in devices with doping concentrations of 4, 8, 12, 16 and 20%, respectively. Despite of absence of the hole injection and transport layers, these efficiencies are superior to efficiencies of device with hole transporting layer due to direct hole injection from anode to dopant in emission layer.

Highly Efficient p-i-n Perovskite Solar Cells Utilizing Novel Low-Temperature Solution-Processed Hole Transport Materials with Linear π-Conjugated Structure.

PubMed

Li, Yang; Xu, Zheng; Zhao, Suling; Qiao, Bo; Huang, Di; Zhao, Ling; Zhao, Jiao; Wang, Peng; Zhu, Youqin; Li, Xianggao; Liu, Xicheng; Xu, Xurong

2016-09-01

Alternative low-temperature solution-processed hole-transporting materials (HTMs) without dopant are critical for highly efficient perovskite solar cells (PSCs). Here, two novel small molecule HTMs with linear π-conjugated structure, 4,4'-bis(4-(di-p-toyl)aminostyryl)biphenyl (TPASBP) and 1,4'-bis(4-(di-p-toyl)aminostyryl)benzene (TPASB), are applied as hole-transporting layer (HTL) by low-temperature (sub-100 °C) solution-processed method in p-i-n PSCs. Compared with standard poly(3,4-ethylenedioxythiophene): poly(styrenesulfonic acid) (PEDOT:PSS) HTL, both TPASBP and TPASB HTLs can promote the growth of perovskite (CH 3 NH 3 PbI 3 ) film consisting of large grains and less grain boundaries. Furthermore, the hole extraction at HTL/CH 3 NH 3 PbI 3 interface and the hole transport in HTL are also more efficient under the conditions of using TPASBP or TPASB as HTL. Hence, the photovoltaic performance of the PSCs is dramatically enhanced, leading to the high efficiencies of 17.4% and 17.6% for the PSCs using TPASBP and TPASB as HTL, respectively, which are ≈40% higher than that of the standard PSC using PEDOT:PSS HTL. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tomographic Structural Changes of Retinal Layers after Internal Limiting Membrane Peeling for Macular Hole Surgery.

PubMed

Faria, Mun Yueh; Ferreira, Nuno P; Cristóvao, Diana M; Mano, Sofia; Sousa, David Cordeiro; Monteiro-Grillo, Manuel

2018-01-01

To highlight tomographic structural changes of retinal layers after internal limiting membrane (ILM) peeling in macular hole surgery. Nonrandomized prospective, interventional study in 38 eyes (34 patients) subjected to pars plana vitrectomy and ILM peeling for idiopathic macular hole. Retinal layers were assessed in nasal and temporal regions before and 6 months after surgery using spectral domain optical coherence tomography. Total retinal thickness increased in the nasal region and decreased in the temporal region. The retinal nerve fiber layer (RNFL), ganglion cell layer (GCL), and inner plexiform layer (IPL) showed thinning on both nasal and temporal sides of the fovea. The thickness of the outer plexiform layer (OPL) increased. The outer nuclear layer (ONL) and outer retinal layers (ORL) increased in thickness after surgery in both nasal and temporal regions. ILM peeling is associated with important alterations in the inner retinal layer architecture, with thinning of the RNFL-GCL-IPL complex and thickening of OPL, ONL, and ORL. These structural alterations can help explain functional outcome and could give indications regarding the extent of ILM peeling, even though peeling seems important for higher rate of hole closure. © 2017 S. Karger AG, Basel.

Decorative power generating panels creating angle insensitive transmissive colors

PubMed Central

Lee, Jae Yong; Lee, Kyu-Tae; Seo, Sungyong; Guo, L. Jay

2014-01-01

We present ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell structure, which can transmit desired color of light. The transmitted colors show great angular tolerance due to the negligible optical phase associated with light propagating in ultra-thin amorphous silicon (a-Si) layers. We achieved the power conversion efficiency of the hybrid cells up to 2 %; and demonstrated that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges due to the suppressed electron-hole recombination in the ultra-thin a-Si layer. We also show the resonance is invariant with respect to the angle of incidence up to ±70° regardless of the polarization of the incident light. Our exploration provides a design to realize energy harvesting colored photovoltaic panels for innovative applications. PMID:24577075

Decorative power generating panels creating angle insensitive transmissive colors

NASA Astrophysics Data System (ADS)

Lee, Jae Yong; Lee, Kyu-Tae; Seo, Sungyong; Guo, L. Jay

2014-02-01

We present ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell structure, which can transmit desired color of light. The transmitted colors show great angular tolerance due to the negligible optical phase associated with light propagating in ultra-thin amorphous silicon (a-Si) layers. We achieved the power conversion efficiency of the hybrid cells up to 2 %; and demonstrated that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges due to the suppressed electron-hole recombination in the ultra-thin a-Si layer. We also show the resonance is invariant with respect to the angle of incidence up to +/-70° regardless of the polarization of the incident light. Our exploration provides a design to realize energy harvesting colored photovoltaic panels for innovative applications.

Decorative power generating panels creating angle insensitive transmissive colors.

PubMed

Lee, Jae Yong; Lee, Kyu-Tae; Seo, Sungyong; Guo, L Jay

2014-02-28

We present ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell structure, which can transmit desired color of light. The transmitted colors show great angular tolerance due to the negligible optical phase associated with light propagating in ultra-thin amorphous silicon (a-Si) layers. We achieved the power conversion efficiency of the hybrid cells up to 2 %; and demonstrated that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges due to the suppressed electron-hole recombination in the ultra-thin a-Si layer. We also show the resonance is invariant with respect to the angle of incidence up to ± 70° regardless of the polarization of the incident light. Our exploration provides a design to realize energy harvesting colored photovoltaic panels for innovative applications.

Distinct oxygen hole doping in different layers of Sr₂CuO 4-δ/La₂CuO₄ superlattices

DOE PAGES

Smadici, S.; Lee, J. C. T.; Rusydi, A.; ...

2012-03-28

X-ray absorption in Sr₂CuO 4-δ/La₂CuO₄ (SCO/LCO) superlattices shows a variable occupation with doping of a hole state different from holes doped for x≲x optimal in bulk La 2-xSr xCuO₄ and suggests that this hole state is on apical oxygen atoms and polarized in the a-b plane. Considering the surface reflectivity gives a good qualitative description of the line shapes of resonant soft x-ray scattering. The interference between superlattice and surface reflections was used to distinguish between scatterers in the SCO and the LCO layers, with the two hole states maximized in different layers of the superlattice.

Magnetotransport of High Mobility Holes in Monolayer and Bilayer WSe2

NASA Astrophysics Data System (ADS)

Tutuc, Emanuel

Transition metal dichalcogenides have attracted significant interest because of their two-dimensional crystal structure, large band-gap, and strong spin-orbit interaction which leads to spin-valley locking. Recent advances in sample fabrication have allowed the experimental study of low temperature magneto-transport of high mobility holes in WSe2. We review here the main results of these studies which reveal clear quantum Hall states in mono- and bilayer WSe2. The data allows the extraction of an effective hole mass of m* = 0.45me (me is the bare electron mass) in both mono and bilayer WSe2. A systematic study of the carrier distribution in bilayer WSe2 determined from a Fourier analysis of the Shubnikov-de Haas oscillations indicates that the two layers are weakly coupled. The individual layer density dependence on gate bias shows negative compressibility, a signature of strong electron-electron interaction in these materials associated with the large effective mass. We discuss the interplay between cyclotron and Zeeman splitting using the dependence of the quantum Hall state sequence on carrier density, and the angle between the magnetic field and the WSe2 plane. Work done in collaboration with B. Fallahazad, H. C. P. Movva, K. Kim, S. K. Banerjee, T. Taniguchi, and K. Watanabe. This work supported by the Nanoelectronics Research Initiative SWAN center, Intel Corp., and National Science Foundation.

Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer.

PubMed

Schumann, T; Gotschke, T; Limbach, F; Stoica, T; Calarco, R

2011-03-04

GaN nanowires (NWs) were grown selectively in holes of a patterned silicon oxide mask, by rf-plasma-assisted molecular beam epitaxy (PAMBE), without any metal catalyst. The oxide was deposited on a thin AlN buffer layer previously grown on a Si(111) substrate. Regular arrays of holes in the oxide layer were obtained using standard e-beam lithography. The selectivity of growth has been studied varying the substrate temperature, gallium beam equivalent pressure and patterning layout. Adjusting the growth parameters, GaN NWs can be selectively grown in the holes of the patterned oxide with complete suppression of the parasitic growth in between the holes. The occupation probability of a hole with a single or multiple NWs depends strongly on its diameter. The selectively grown GaN NWs have one common crystallographic orientation with respect to the Si(111) substrate via the AlN buffer layer, as proven by x-ray diffraction (XRD) measurements. Based on the experimental data, we present a schematic model of the GaN NW formation in which a GaN pedestal is initially grown in the hole.

Effect of hole injection layer/hole transport layer polymer and device structure on the properties of white OLED.

PubMed

Cho, Ho Young; Park, Eun Jung; Kim, Jin-Hoo; Park, Lee Soon

2008-10-01

Copolymers containing carbazole and aromatic amine unit were synthesized by using Pd-catalyzed polycondensation reaction. The polymers were characterized in terms of their molecular weight and thermal stability and their UV and PL properties in solution and film state. The band gap energy of the polymers was also determined by the UV absorption and HOMO energy level data. The polymers had high HOMO energy level of 5.19-5.25 eV and work function close to that of ITO. The polymers were thus tested as hole injection/transport layer in the white organic light emitting diodes (OLED) by using 4,4'-bis(2,2-diphenyl-ethen-1-yl)diphenyl (DPVBi) as blue emitting material and 5,6,11,12-tetraphenylnaphthacene (Rubrene) as orange emitting dopant. The synthesized polymer, poly bis[6-bromo-N-(2-ethylhexyl)-carbazole-3-yl] was found to be useful as hole injection layer/hole transport layer (HIL/HTL) multifunctional material with high luminance efficiency and stable white color coordinate in the wide range of applied voltage.

Inverted bulk-heterojunction solar cell with cross-linked hole-blocking layer

PubMed Central

Udum, Yasemin; Denk, Patrick; Adam, Getachew; Apaydin, Dogukan H.; Nevosad, Andreas; Teichert, Christian; S. White, Matthew.; S. Sariciftci, Niyazi.; Scharber, Markus C.

2014-01-01

We have developed a hole-blocking layer for bulk-heterojunction solar cells based on cross-linked polyethylenimine (PEI). We tested five different ether-based cross-linkers and found that all of them give comparable solar cell efficiencies. The initial idea that a cross-linked layer is more solvent resistant compared to a pristine PEI layer could not be confirmed. With and without cross-linking, the PEI layer sticks very well to the surface of the indium–tin–oxide electrode and cannot be removed by solvents used to process PEI or common organic semiconductors. The cross-linked PEI hole-blocking layer functions for multiple donor–acceptor blends. We found that using cross-linkers improves the reproducibility of the device fabrication process. PMID:24817837

Tunable electroluminescent color for 2, 5-diphenyl -1, 4-distyrylbenzene with two trans-double bonds

NASA Astrophysics Data System (ADS)

Cheng, Gang; Zhang, Yingfang; Zhao, Yi; Liu, Shiyong; Xie, Zengqi; Xia, Hong; Hanif, Muddasir; Ma, Yuguang

2005-07-01

Exciplex emission is observed in electroluminescent (EL) spectrum of an organic light-emitting device (OLED), where 2, 5-diphenyl -1, 4-distyrylbenzene with two trans-double bonds (trans-DPDSB), (8-hydroxyquinoline) aluminum, and N,N'-diphenyl-N,N'-bis(1-naphthyl)-(1,1'-biphenyl)-4,4'-diamine (NPB) are used as light-emitting, electron-transporting, and hole-transporting layers, respectively. This emission can be dramatically weakened by inserting a hole-injecting layer of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) between the hole-transporting layer and the anode. Consequently, EL color of this OLED is tuned from white to blue. This phenomenon may result from the improvement of hole injection, which shifts the major recombination zone from the NPB/trans-DPDSB interface to the trans-DPDSB layer.

Tempo-spatially resolved dynamics of elec- trons and holes in bilayer MoS2 -WS2

NASA Astrophysics Data System (ADS)

Galicia-Hernandez, J. M.; Turkowski, V.; Hernandez-Cocoletzi, G.; Rahman, T. S.

We have performed a Density-Matrix Time-Dependent Density-Functional Theory analysis of the response of bilayer MoS2-WS2 to external laser-pulse perturbations. Time-resolved study of the dynamics of electrons and holes, including formation and dissociation of strongly-bound intra- and inter-layer excitonic states, shows that the experimentally observed ultrafast inter-layer MoS2 to WS2 migration of holes may be attributed to unusually large delocalization of the hole state which extends far into the inter-layer region. We also argue that the velocity of the hole transfer may be further enhanced by its interaction with transfer phonon modes. We analyze other possible consequences of the hole delocalization in the system, including reduction of the effects of the electron-electron and hole-hole repulsion in the trions and biexcitons as compared to that in the monolayers Work supported in part by DOE Grant No. DOE-DE-FG02-07ER46354 and by CONACYT Scholarship No. 23210 (J.M.G.H.).

Tetra-methyl substituted copper (II) phthalocyanine as a hole injection enhancer in organic light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yu-Long; Xu, Jia-Ju; Lin, Yi-Wei

2015-10-15

We have enhanced hole injection and lifetime in organic light-emitting diodes (OLEDs) by incorporating the isomeric metal phthalocyanine, CuMePc, as a hole injection enhancer. The OLED devices containing CuMePc as a hole injection layer (HIL) exhibited higher luminous efficiency and operational lifetime than those using a CuPc layer and without a HIL. The effect of CuMePc thickness on device performance was investigated. Atomic force microscope (AFM) studies revealed that the thin films were smooth and uniform because the mixture of CuMePc isomers depressed crystallization within the layer. This may have caused the observed enhanced hole injection, indicating that CuMePc ismore » a promising HIL material for highly efficient OLEDs.« less

Interlayer electron-hole pair multiplication by hot carriers in atomic layer semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger; Aji, Vivek; Gabor, Nathaniel

Two-dimensional heterostructures composed of atomically thin transition metal dichalcogenides provide the opportunity to design novel devices for the study of electron-hole pair multiplication. We report on highly efficient multiplication of interlayer electron-hole pairs at the interface of a tungsten diselenide / molybdenum diselenide heterostructure. Electronic transport measurements of the interlayer current-voltage characteristics indicate that layer-indirect electron-hole pairs are generated by hot electron impact excitation. Our findings, which demonstrate an efficient energy relaxation pathway that competes with electron thermalization losses, make 2D semiconductor heterostructures viable for a new class of hot-carrier energy harvesting devices that exploit layer-indirect electron-hole excitations. SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Air Force Office of Scientific Research.

Ionization chamber dosimeter

DOEpatents

Renner, Tim R.; Nyman, Mark A.; Stradtner, Ronald

1991-01-01

A method for fabricating an ion chamber dosimeter collecting array of the type utilizing plural discrete elements formed on a uniform collecting surface which includes forming a thin insulating layer over an aperture in a frame having surfaces, forming a predetermined pattern of through holes in the layer, plating both surfaces of the layer and simultaneously tilting and rotating the frame for uniform plate-through of the holes between surfaces. Aligned masking and patterned etching of the surfaces provides interconnects between the through holes and copper leads provided to external circuitry.

Photo-induced surface modification to improve the performance of lead sulfide quantum dot solar cell.

PubMed

Tulsani, Srikanth Reddy; Rath, Arup Kumar

2018-07-15

The solution-processed quantum dot (QD) solar cell technology has seen significant advancements in recent past to emerge as a potential contender for the next generation photovoltaic technology. In the development of high performance QD solar cell, the surface ligand chemistry has played the important role in controlling the doping type and doping density of QD solids. For instance, lead sulfide (PbS) QDs which is at the forefront of QD solar cell technology, can be made n-type or p-type respectively by using iodine or thiol as the surfactant. The advancements in surface ligand chemistry enable the formation of p-n homojunction of PbS QDs layers to attain high solar cell performances. It is shown here, however, that poor Fermi level alignment of thiol passivated p-type PbS QD hole transport layer with the n-type PbS QD light absorbing layer has rendered the photovoltaic devices from realizing their full potential. Here we develop a control surface oxidation technique using facile ultraviolet ozone treatment to increase the p-doping density in a controlled fashion for the thiol passivated PbS QD layer. This subtle surface modification tunes the Fermi energy level of the hole transport layer to deeper values to facilitate the carrier extraction and voltage generation in photovoltaic devices. In photovoltaic devices, the ultraviolet ozone treatment resulted in the average gain of 18% in the power conversion efficiency with the highest recorded efficiency of 8.98%. Copyright © 2018 Elsevier Inc. All rights reserved.

Micro-hole array fluorescent sensor based on AC-Dielectrophoresis (DEP) for simultaneous analysis of nano-molecules

NASA Astrophysics Data System (ADS)

Kim, Hye Jin; Kang, Dong-Hoon; Lee, Eunji; Hwang, Kyo Seon; Shin, Hyun-Joon; Kim, Jinsik

2018-02-01

We propose a simple fluorescent bio-chip based on two types of alternative current-dielectrophoretic (AC-DEP) force, attractive (positive DEP) and repulsive (negative DEP) force, for simultaneous nano-molecules analysis. Various radius of micro-holes on the bio-chip are designed to apply the different AC-DEP forces, and the nano-molecules are concentrated inside the micro-hole arrays according to the intensity of the DEP force. The bio-chip was fabricated by Micro Electro Mechanical system (MEMS) technique, and was composed of two layers; a SiO2 layer and Ta/Pt layer were accomplished for an insulation layer and a top electrode with micro-hole arrays to apply electric fields for DEP force, respectively. Each SiO2 and Ta/Pt layers were deposited by thermal oxidation and sputtering, and micro-hole arrays were fabricated with Inductively Coupled Plasma (ICP) etching process. For generation of each positive and negative DEP at micro-holes, we applied two types of sine-wave AC voltage with different frequency range alternately. The intensity of the DEP force was controlled by the radius of the micro-hole and size of nano-molecule, and calculated with COMSOL multi-physics. Three types of nano-molecules labelled with different fluorescent dye were used and the intensity of nano-molecules was examined by the fluorescent optical analysis after applying the DEP force. By analyzing the fluorescent intensities of the nano-molecules, we verify the various nano-molecules in analyte are located successfully inside corresponding micro-holes with different radius according to their size.

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact

PubMed Central

2015-01-01

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm2 and a high power conversion efficiency of 19.2%. PMID:25679010

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact.

PubMed

Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

2014-12-17

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO 2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency of 19.2%.

Numerical simulation on reasonable hole-sealing depth of boreholes for gas extraction

NASA Astrophysics Data System (ADS)

Zhao, Dan; Pan, Jingtao

2018-04-01

To overcome the low efficiency of extracting gas in coal reservoirs with a low gas permeability, some boreholes were drilled for gas extraction in No. 2 coal reservoir of Wangjialing Coalmine in Shanxi Province, China and reasonably sealed. Aiming at shortfalls such as rapid attenuation of volume for extracted gas as well as low gas permeability when using boreholes in the No. 2 coal reservoir, the traditional COMSOL MultiphysicsMT Earth Science Module was used to couple the three governing equations (Darcy-Brinkman-Navier-Stokes) for fluids. On this basis, numerical simulation on the seepage law along the directions of roadways and boreholes was carried out. The simulation results indicated that when the hole-sealing length was within the width range of fractures in roadways, the negative pressure not only led the gas in surrounding rock masses to flow to the boreholes, but also made the air flow in roadways to permeate into coal walls. As a result, gas and air flows both entered into the boreholes through the loosening zone containing fractures, resulting in seepage of air in roadway to the boreholes. The seepage velocity along the roadway direction under condition with a hole-sealing length of 12 m was obviously slower than that when the hole-sealing length was 8 m. While, the method by simply increasing the length of the hole-sealing section for boreholes failed to effectively stop the air flow in roadways from permeating into the coal wall and then entering the boreholes. Moreover, the increase in the hole-sealing length brought about much more difficulties to the hole-sealing construction. So, the method is not operable in practical condition of the coal mine. Therefore, it is necessary to improve the traditional hole-sealing technology based on foamed macromolecular materials which are mainly made of polyurethane (PU) and use the fluid wall-type hole-sealing technology based on solid-liquid coupling. Then, the effects of gas extraction before and after using the fluid wall-type hole-sealing technology based on solid-liquid coupling to increase the hole-sealing length to 12 m were compared. The comparison results revealed that the pure extraction amount of gas from a single borehole in the No. 2 coal reservoir of Wangjialing Coalmine was improved by 4˜6 times. In addition, the concentration of extracted gas increased from less than 1% under the traditional hole-sealing mode to 20%˜25%, with an increase of more than 20 times. The extraction effect of the No. 2 coal reservoir of the coal mine was significantly enhanced by employing the fluid-wall-type hole-sealing technology based on solid-liquid coupling.

Broadband Light Absorption and Efficient Charge Separation Using a Light Scattering Layer with Mixed Cavities for High-Performance Perovskite Photovoltaic Cells with Stability.

PubMed

Moon, Byeong Cheul; Park, Jung Hyo; Lee, Dong Ki; Tsvetkov, Nikolai; Ock, Ilwoo; Choi, Kyung Min; Kang, Jeung Ku

2017-08-01

CH 3 NH 3 PbI 3 is one of the promising light sensitizers for perovskite photovoltaic cells, but a thick layer is required to enhance light absorption in the long-wavelength regime ranging from PbI 2 absorption edge (500 nm) to its optical band-gap edge (780 nm) in visible light. Meanwhile, the thick perovskite layer suppresses visible-light absorption in the short wavelengths below 500 nm and charge extraction capability of electron-hole pairs produced upon light absorption. Herein, we find that a new light scattering layer with the mixed cavities of sizes in 100 and 200 nm between transparent fluorine-doped tin oxide and mesoporous titanium dioxide electron transport layer enables full absorption of short-wavelength photons (λ < 500 nm) to the perovskite along with enhanced absorption of long-wavelength photons (500 nm < λ < 780 nm). Moreover, the light-driven electric field is proven to allow efficient charge extraction upon light absorption, thereby leading to the increased photocurrent density as well as the fill factor prompted by the slow recombination rate. Additionally, the photocurrent density of the cell with a light scattering layer of mixed cavities is stabilized due to suppressed charge accumulation. Consequently, this work provides a new route to realize broadband light harvesting of visible light for high-performance perovskite photovoltaic cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A route to improved extraction efficiency of light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhu, H.; Shan, C. X.; Wang, L. K.; Yang, Y.; Zhang, J. Y.; Yao, B.; Shen, D. Z.; Fan, X. W.

2010-01-01

The electroluminescence from an n-MgZnO/i-ZnO/MgO/p-GaN asymmetric double heterojunction has been demonstrated. With the injection of electrons from n-MgZnO and holes from p-GaN, an intense ultraviolet emission coming from the ZnO active layer was observed. It is revealed that the emission intensity of the diode recorded from the MgZnO side is significantly larger than that from the MgO side because of the asymmetric waveguide structure formed by the lower refractive index of MgO than that of MgZnO. The asymmetric waveguide structure reported in this letter may promise a simple and effective route to light-emitting diodes with improved light-extraction efficiency.

The enhancement of 21.2%-power conversion efficiency in polymer photovoltaic cells by using mixed Au nanoparticles with a wide absorption spectrum of 400 nm-1000 nm

NASA Astrophysics Data System (ADS)

Hao, Jing-Yu; Xu, Ying; Zhang, Yu-Pei; Chen, Shu-Fen; Li, Xing-Ao; Wang, Lian-Hui; Huang, Wei

2015-04-01

Au nanoparticles (NPs) mixed with a majority of bone-like, rod, and cube shapes and a minority of irregular spheres, which can generate a wide absorption spectrum of 400 nm-1000 nm and three localized surface plasmon resonance peaks, respectively, at 525, 575, and 775 nm, are introduced into the hole extraction layer poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) to improve optical-to-electrical conversion performances in polymer photovoltaic cells. With the doping concentration of Au NPs optimized, the cell performance is significantly improved: the short-circuit current density and power conversion efficiency of the poly(3-hexylthiophene): [6,6]-phenyl-C60-butyric acid methyl ester cell are increased by 20.54% and 21.2%, reaching 11.15 mA·cm-2 and 4.23%. The variations of optical, electrical, and morphology with the incorporation of Au NPs in the cells are analyzed in detail, and our results demonstrate that the cell performance improvement can be attributed to a synergistic reaction, including: 1) both the localized surface plasmon resonance- and scattering-induced absorption enhancement of the active layer, 2) Au doping-induced hole transport/extraction ability enhancement, and 3) large interface roughness-induced efficient exciton dissociation and hole collection. Project supported by the National Basic Research Program of China (Grant Nos. 2015CB932202 and 2012CB933301), the National Natural Science Foundation of China (Grant Nos. 61274065, 51173081, 61136003, BZ2010043, 51372119, and 51172110), the Science Fund from the Ministry of Education of China (Grant No. IRT1148), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20113223110005), the Priority Academic Program Development of Jiangsu Provincial Higher Education Institutions (Grant No. YX03001), and the National Synergistic Innovation Center for Advanced Materials and the Synergetic Innovation Center for Organic Electronics and Information Displays, China.

Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Asryan, L. V., E-mail: asryan@vt.edu; Zubov, F. I.; Kryzhanovskaya, N. V.

2016-10-15

The power characteristics of quantum-well lasers with asymmetric barrier layers, which represent a novel type of injection laser, are calculated on the basis of an extended model taking into account asymmetry in the filling of electron and hole states. The electron–hole asymmetry is shown to have no significant effect on the characteristics of these lasers. Even in the presence of intermediate layers (located between the quantum well and each of the two asymmetric barrier layers), where parasitic electron–hole recombination does occur, the internal differential quantum efficiency of such a laser exhibits only a weak dependence on the pump current andmore » remains close to unity; therefore, the light–current characteristic remains linear up to high pumping levels.« less

Particle motion and Penrose processes around rotating regular black hole

NASA Astrophysics Data System (ADS)

Abdujabbarov, Ahmadjon

2016-07-01

The neutral particle motion around rotating regular black hole that was derived from the Ayón-Beato-García (ABG) black hole solution by the Newman-Janis algorithm in the preceding paper (Toshmatov et al., Phys. Rev. D, 89:104017, 2014) has been studied. The dependencies of the ISCO (innermost stable circular orbits along geodesics) and unstable orbits on the value of the electric charge of the rotating regular black hole have been shown. Energy extraction from the rotating regular black hole through various processes has been examined. We have found expression of the center of mass energy for the colliding neutral particles coming from infinity, based on the BSW (Baňados-Silk-West) mechanism. The electric charge Q of rotating regular black hole decreases the potential of the gravitational field as compared to the Kerr black hole and the particles demonstrate less bound energy at the circular geodesics. This causes an increase of efficiency of the energy extraction through BSW process in the presence of the electric charge Q from rotating regular black hole. Furthermore, we have studied the particle emission due to the BSW effect assuming that two neutral particles collide near the horizon of the rotating regular extremal black hole and produce another two particles. We have shown that efficiency of the energy extraction is less than the value 146.6 % being valid for the Kerr black hole. It has been also demonstrated that the efficiency of the energy extraction from the rotating regular black hole via the Penrose process decreases with the increase of the electric charge Q and is smaller in comparison to 20.7 % which is the value for the extreme Kerr black hole with the specific angular momentum a= M.

A new method to evaluate image quality of CBCT images quantitatively without observers

PubMed Central

Shimizu, Mayumi; Okamura, Kazutoshi; Yoshida, Shoko; Weerawanich, Warangkana; Tokumori, Kenji; Jasa, Gainer R; Yoshiura, Kazunori

2017-01-01

Objectives: To develop an observer-free method for quantitatively evaluating the image quality of CBCT images by applying just-noticeable difference (JND). Methods: We used two test objects: (1) a Teflon (polytetrafluoroethylene) plate phantom attached to a dry human mandible; and (2) a block phantom consisting of a Teflon step phantom and an aluminium step phantom. These phantoms had holes with different depths. They were immersed in water and scanned with a CB MercuRay (Hitachi Medical Corporation, Tokyo, Japan) at tube voltages of 120 kV, 100 kV, 80 kV and 60 kV. Superimposed images of the phantoms with holes were used for evaluation. The number of detectable holes was used as an index of image quality. In detecting holes quantitatively, the threshold grey value (ΔG), which differentiated holes from the background, was calculated using a specific threshold (the JND), and we extracted the holes with grey values above ΔG. The indices obtained by this quantitative method (the extracted hole values) were compared with the observer evaluations (the observed hole values). In addition, the contrast-to-noise ratio (CNR) of the shallowest detectable holes and the deepest undetectable holes were measured to evaluate the contribution of CNR to detectability. Results: The results of this evaluation method corresponded almost exactly with the evaluations made by observers. The extracted hole values reflected the influence of different tube voltages. All extracted holes had an area with a CNR of ≥1.5. Conclusions: This quantitative method of evaluating CBCT image quality may be more useful and less time-consuming than evaluation by observation. PMID:28045343

Diode and method of making the same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dickerson, Jeramy Ray; Wierer, Jr., Jonathan; Kaplar, Robert

2018-03-13

A diode includes a second semiconductor layer over a first semiconductor layer. The diode further includes a third semiconductor layer over the second semiconductor layer, where the third semiconductor layer includes a first semiconductor element over the second semiconductor layer. The third semiconductor layer additionally includes a second semiconductor element over the second semiconductor layer, wherein the second semiconductor element surrounds the first semiconductor element. Further, the third semiconductor layer includes a third semiconductor element over the second semiconductor element. Furthermore, a hole concentration of the second semiconductor element is less than a hole concentration of the first semiconductor element.

Boundary Layer Transition Correlations and Aeroheating Predictions for Mars Smart Lander

NASA Technical Reports Server (NTRS)

Hollis, Brian R.; Liechty, Derek S.

2002-01-01

Laminar and turbulent perfect-gas air, Navier-Stokes computations have been performed for a proposed Mars Smart Lander entry vehicle at Mach 6 over a free stream Reynolds number range of 6.9 x 10(exp 6)/m to 2.4 x 10(exp 7)/m (2.1 x 10(exp 6)/ft to 7.3 x 10(exp 6)/ft) for angles-of-attack of 0-deg, 11-deg, 16-deg, and 20-deg, and comparisons were made to wind tunnel heating data obtained a t the same conditions. Boundary layer edge properties were extracted from the solutions and used to correlate experimental data on the effects of heat-shield penetrations (bolt-holes where the entry vehicle would be attached to the propulsion module during transit to Mars) on boundary-layer transition. A non-equilibrium Martian-atmosphere computation was performed for the peak heating point on the entry trajectory in order to determine if the penetrations would produce boundary-layer transition by using this correlation.

Boundary Layer Transition Correlations and Aeroheating Predictions for Mars Smart Lander

NASA Technical Reports Server (NTRS)

Hollis, Brian R.; Liechty, Derek S.

2002-01-01

Laminar and turbulent perfect-gas air, Navier-Stokes computations have been performed for a proposed Mars Smart Lander entry vehicle at Mach 6 over a free stream Reynolds number range of 6.9 x 10(exp 6/m to 2.4 x 10(exp 7)m(2.1 x 10(exp 6)/ft to 7.3 x 10(exp 6)ft) for angles-of-attack of 0-deg, 11-deg, 16-deg, and 20-deg, and comparisons were made to wind tunnel heating data obtained at the same conditions. Boundary layer edge properties were extracted from the solutions and used to correlate experimental data on the effects of heat-shield penetrations (bolt-holes where the entry vehicle would be attached to the propulsion module during transit to Mars) on boundary-layer transition. A non-equilibrium Martian-atmosphere computation was performed for the peak heating point on the entry trajectory in order to determine if the penetrations would produce boundary-layer transition by using this correlation.

Influence of hole transport material/metal contact interface on perovskite solar cells

NASA Astrophysics Data System (ADS)

Lei, Lei; Zhang, Shude; Yang, Songwang; Li, Xiaomin; Yu, Yu; Wei, Qingzhu; Ni, Zhichun; Li, Ming

2018-06-01

Interfaces have a significant impact on the performance of perovskite solar cells. This work investigated the influence of hole transport material/metal contact interface on photovoltaic behaviours of perovskite solar devices. Different hole material/metal contact interfaces were obtained by depositing the metal under different conditions. High incident kinetic energy metal particles were proved to penetrate and embed into the hole transport material. These isolated metal particles in hole transport materials capture holes and increase the apparent carrier transport resistance of the hole transport layer. Sample temperature was found to be of great significance in metal deposition. Since metal vapour has a high temperature, the deposition process accumulated a large amount of heat. The heat evaporated the additives in the hole transport layer and decreased the hole conductivity. On the other hand, high temperature may cause iodization of the metal contact.

Influence of hole transport material/metal contact interface on perovskite solar cells.

PubMed

Lei, Lei; Zhang, Shude; Yang, Songwang; Li, Xiaomin; Yu, Yu; Wei, Qingzhu; Ni, Zhichun; Li, Ming

2018-06-22

Interfaces have a significant impact on the performance of perovskite solar cells. This work investigated the influence of hole transport material/metal contact interface on photovoltaic behaviours of perovskite solar devices. Different hole material/metal contact interfaces were obtained by depositing the metal under different conditions. High incident kinetic energy metal particles were proved to penetrate and embed into the hole transport material. These isolated metal particles in hole transport materials capture holes and increase the apparent carrier transport resistance of the hole transport layer. Sample temperature was found to be of great significance in metal deposition. Since metal vapour has a high temperature, the deposition process accumulated a large amount of heat. The heat evaporated the additives in the hole transport layer and decreased the hole conductivity. On the other hand, high temperature may cause iodization of the metal contact.

Solution-Processed Ultrathin TiO2 Compact Layer Hybridized with Mesoporous TiO2 for High-Performance Perovskite Solar Cells.

PubMed

Jeong, Inyoung; Park, Yun Hee; Bae, Seunghwan; Park, Minwoo; Jeong, Hansol; Lee, Phillip; Ko, Min Jae

2017-10-25

The electron transport layer (ETL) is a key component of perovskite solar cells (PSCs) and must provide efficient electron extraction and collection while minimizing the charge recombination at interfaces in order to ensure high performance. Conventional bilayered TiO 2 ETLs fabricated by depositing compact TiO 2 (c-TiO 2 ) and mesoporous TiO 2 (mp-TiO 2 ) in sequence exhibit resistive losses due to the contact resistance at the c-TiO 2 /mp-TiO 2 interface and the series resistance arising from the intrinsically low conductivity of TiO 2 . Herein, to minimize such resistive losses, we developed a novel ETL consisting of an ultrathin c-TiO 2 layer hybridized with mp-TiO 2 , which is fabricated by performing one-step spin-coating of a mp-TiO 2 solution containing a small amount of titanium diisopropoxide bis(acetylacetonate) (TAA). By using electron microscopies and elemental mapping analysis, we establish that the optimal concentration of TAA produces an ultrathin blocking layer with a thickness of ∼3 nm and ensures that the mp-TiO 2 layer has a suitable porosity for efficient perovskite infiltration. We compare PSCs based on mesoscopic ETLs with and without compact layers to determine the role of the hole-blocking layer in their performances. The hybrid ETLs exhibit enhanced electron extraction and reduced charge recombination, resulting in better photovoltaic performances and reduced hysteresis of PSCs compared to those with conventional bilayered ETLs.

Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Wei; Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871; Zhang, Qin

2014-11-24

We report experimental methods to ascertain a complete energy band alignment of a broken-gap tunnel field-effect transistor based on an InAs/GaSb hetero-junction. By using graphene as an optically transparent electrode, both the electron and hole barrier heights at the InAs/GaSb interface can be quantified. For a Al{sub 2}O{sub 3}/InAs/GaSb layer structure, the barrier height from the top of the InAs and GaSb valence bands to the bottom of the Al{sub 2}O{sub 3} conduction band is inferred from electron emission whereas hole emissions reveal the barrier height from the top of the Al{sub 2}O{sub 3} valence band to the bottom ofmore » the InAs and GaSb conduction bands. Subsequently, the offset parameter at the broken gap InAs/GaSb interface is extracted and thus can be used to facilitate the development of predicted models of electron quantum tunneling efficiency and transistor performance.« less

2D black phosphorous nanosheets as a hole transporting material in perovskite solar cells

NASA Astrophysics Data System (ADS)

Muduli, Subas Kumar; Varrla, Eswaraiah; Kulkarni, Sneha Avinash; Han, Guifang; Thirumal, Krishnamoorthy; Lev, Ovadia; Mhaisalkar, Subodh; Mathews, Nripan

2017-12-01

We demonstrate for the first-time liquid exfoliated few layers of 2D Black phosphorus (BP) nanosheets as a hole transporting material (HTM) for perovskite based solar cells. The photoelectron spectroscopy in air (PESA) measurements confirm the low laying valence band level of BP nanosheets (-5.2 eV) favourable for hole injection from CH3NH3PbI3 (MAPbI3). Our results show that ∼25% improvement in power conversion efficiency (PCE) of η = 16.4% for BP nanosheets + Spiro-OMeTAD as an HTM as compared to spiro-OMeTAD (η = 13.1%). When BP nanosheets are exclusively utilised as an HTM, a PCE of η = 7.88% is noted, an improvement over the 4% PCE values observed for HTM free devices. Photoluminescence (PL) quenching of MAPbI3 and impedance measurements further confirm the charge extraction ability of BP nanosheets. The structural and optical characterization of liquid exfoliated BP nanosheets is discussed in detail with the aid of transmission electron microscopy, Raman spectroscopy, absorption spectroscopy and photo-electron spectroscopy.

Solar cell contact formation using laser ablation

DOEpatents

Harley, Gabriel; Smith, David D.; Cousins, Peter John

2015-07-21

The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.

Solar cell contact formation using laser ablation

DOEpatents

Harley, Gabriel; Smith, David; Cousins, Peter

2012-12-04

The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.

Solar cell contact formation using laser ablation

DOEpatents

Harley, Gabriel; Smith, David D.; Cousins, Peter John

2014-07-22

The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline materiat layer; and forming conductive contacts in the plurality of contact holes.

Quantum-Dot Light-Emitting Diodes with Nitrogen-Doped Carbon Nanodot Hole Transport and Electronic Energy Transfer Layer.

PubMed

Park, Young Ran; Jeong, Hu Young; Seo, Young Soo; Choi, Won Kook; Hong, Young Joon

2017-04-12

Electroluminescence efficiency is crucial for the application of quantum-dot light-emitting diodes (QD-LEDs) in practical devices. We demonstrate that nitrogen-doped carbon nanodot (N-CD) interlayer improves electrical and luminescent properties of QD-LEDs. The N-CDs were prepared by solution-based bottom up synthesis and were inserted as a hole transport layer (HTL) between other multilayer HTL heterojunction and the red-QD layer. The QD-LEDs with N-CD interlayer represented superior electrical rectification and electroluminescent efficiency than those without the N-CD interlayer. The insertion of N-CD layer was found to provoke the Förster resonance energy transfer (FRET) from N-CD to QD layer, as confirmed by time-integrated and -resolved photoluminescence spectroscopy. Moreover, hole-only devices (HODs) with N-CD interlayer presented high hole transport capability, and ultraviolet photoelectron spectroscopy also revealed that the N-CD interlayer reduced the highest hole barrier height. Thus, more balanced carrier injection with sufficient hole carrier transport feasibly lead to the superior electrical and electroluminescent properties of the QD-LEDs with N-CD interlayer. We further studied effect of N-CD interlayer thickness on electrical and luminescent performances for high-brightness QD-LEDs. The ability of the N-CD interlayer to improve both the electrical and luminescent characteristics of the QD-LEDs would be readily exploited as an emerging photoactive material for high-efficiency optoelectronic devices.

Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Yan, Long; Zhang, Yuantao; Han, Xu; Deng, Gaoqiang; Li, Pengchong; Yu, Ye; Chen, Liang; Li, Xiaohang; Song, Junfeng

2018-04-01

Polarization-induced doping has been shown to be effective for wide-bandgap III-nitrides. In this work, we demonstrated a significantly enhanced hole concentration via linearly grading an N-polar AlxGa1-xN (x = 0-0.3) layer grown by metal-organic chemical vapor deposition. The hole concentration increased by ˜17 times compared to that of N-polar p-GaN at 300 K. The fitting results of temperature-dependent hole concentration indicated that the holes in the graded p-AlGaN layer comprised both polarization-induced and thermally activated ones. By optimizing the growth conditions, the hole concentration was further increased to 9.0 × 1017 cm-3 in the graded AlGaN layer. The N-polar blue-violet light-emitting device with the graded p-AlGaN shows stronger electroluminescence than the one with the conventional p-GaN. The study indicates the potential of the polarization doping technique in high-performance N-polar light-emitting devices.

Insight into the CH3NH3PbI3/C interface in hole-conductor-free mesoscopic perovskite solar cells

NASA Astrophysics Data System (ADS)

Li, Jiangwei; Niu, Guangda; Li, Wenzhe; Cao, Kun; Wang, Mingkui; Wang, Liduo

2016-07-01

Perovskite solar cells (PSCs) with hole-conductor-free mesoscopic architecture have shown superb stability and great potential in practical application. The printable carbon counter electrodes take full responsibility of extracting holes from the active CH3NH3PbI3 absorbers. However, an in depth study of the CH3NH3PbI3/C interface properties, such as the structural formation process and the effect of interfacial conditions on hole extraction, is still lacking. Herein, we present, for the first time, an insight into the spatial confinement induced CH3NH3PbI3/C interface formation by in situ photoluminescence observations during the crystallization process of CH3NH3PbI3. The derived reaction kinetics allows a quantitative description of the perovskite formation process. In addition, we found that the interfacial contact between carbon and perovskite was dominant for hole extraction efficiency and associated with the photovoltaic parameter of short circuit current density (JSC). Consequently, we conducted a solvent vapor assisted process of PbI2 diffusion to carefully control the CH3NH3PbI3/C interface with less unreacted PbI2 barrier. The improvement of interface conditions thereby contributes to a high hole extraction proved by the charge extraction resistance and PL lifetime change, resulting in the increased JSC valve.Perovskite solar cells (PSCs) with hole-conductor-free mesoscopic architecture have shown superb stability and great potential in practical application. The printable carbon counter electrodes take full responsibility of extracting holes from the active CH3NH3PbI3 absorbers. However, an in depth study of the CH3NH3PbI3/C interface properties, such as the structural formation process and the effect of interfacial conditions on hole extraction, is still lacking. Herein, we present, for the first time, an insight into the spatial confinement induced CH3NH3PbI3/C interface formation by in situ photoluminescence observations during the crystallization process of CH3NH3PbI3. The derived reaction kinetics allows a quantitative description of the perovskite formation process. In addition, we found that the interfacial contact between carbon and perovskite was dominant for hole extraction efficiency and associated with the photovoltaic parameter of short circuit current density (JSC). Consequently, we conducted a solvent vapor assisted process of PbI2 diffusion to carefully control the CH3NH3PbI3/C interface with less unreacted PbI2 barrier. The improvement of interface conditions thereby contributes to a high hole extraction proved by the charge extraction resistance and PL lifetime change, resulting in the increased JSC valve. Electronic supplementary information (ESI) available: Fig. S1-S11, Tables S1, S2 and details of the Avrami model for reaction kinetics. See DOI: 10.1039/c6nr03359h

Solution-processed multilayer polymer light-emitting diode without intermixing

NASA Astrophysics Data System (ADS)

Kasparek, C.; Blom, P. W. M.

2017-01-01

The intermixing of two emissive layers in a four-layer solution-processed polymeric light-emitting diode with a hole injection, two emissive layers, and one hole-blocking layer is investigated. The relative emission of both emissive layers is measured and compared to a calculated recombination profile across the device using drift-diffusion simulations. A good agreement between the measured and calculated relative emission was found, supporting that there is no intermixing in the two emissive materials.

En face spectral domain optical coherence tomography analysis of lamellar macular holes.

PubMed

Clamp, Michael F; Wilkes, Geoff; Leis, Laura S; McDonald, H Richard; Johnson, Robert N; Jumper, J Michael; Fu, Arthur D; Cunningham, Emmett T; Stewart, Paul J; Haug, Sara J; Lujan, Brandon J

2014-07-01

To analyze the anatomical characteristics of lamellar macular holes using cross-sectional and en face spectral domain optical coherence tomography. Forty-two lamellar macular holes were retrospectively identified for analysis. The location, cross-sectional length, and area of lamellar holes were measured using B-scans and en face imaging. The presence of photoreceptor inner segment/outer segment disruption and the presence or absence of epiretinal membrane formation were recorded. Forty-two lamellar macular holes were identified. Intraretinal splitting occurred within the outer plexiform layer in 97.6% of eyes. The area of intraretinal splitting in lamellar holes did not correlate with visual acuity. Eyes with inner segment/outer segment disruption had significantly worse mean logMAR visual acuity (0.363 ± 0.169; Snellen = 20/46) than in eyes without inner segment/outer segment disruption (0.203 ± 0.124; Snellen = 20/32) (analysis of variance, P = 0.004). Epiretinal membrane was present in 34 of 42 eyes (81.0%). En face imaging allowed for consistent detection and quantification of intraretinal splitting within the outer plexiform layer in patients with lamellar macular holes, supporting the notion that an area of anatomical weakness exists within Henle's fiber layer, presumably at the synaptic connection of these fibers within the outer plexiform layer. However, the en face area of intraretinal splitting did not correlate with visual acuity, disruption of the inner segment/outer segment junction was associated with significantly worse visual acuity in patients with lamellar macular holes.

Efficient charge-carrier extraction from Ag₂S quantum dots prepared by the SILAR method for utilization of multiple exciton generation.

PubMed

Zhang, Xiaoliang; Liu, Jianhua; Johansson, Erik M J

2015-01-28

The utilization of electron-hole pairs (EHPs) generated from multiple excitons in quantum dots (QDs) is of great interest toward efficient photovoltaic devices and other optoelectronic devices; however, extraction of charge carriers remains difficult. Herein, we extract photocharges from Ag2S QDs and investigate the dependence of the electric field on the extraction of charges from multiple exciton generation (MEG). Low toxic Ag2S QDs are directly grown on TiO2 mesoporous substrates by employing the successive ionic layer adsorption and reaction (SILAR) method. The contact between QDs is important for the initial charge separation after MEG and for the carrier transport, and the space between neighbor QDs decreases with more SILAR cycles, resulting in better charge extraction. At the optimal electric field for extraction of photocharges, the results suggest that the threshold energy (hνth) for MEG is 2.41Eg. The results reveal that Ag2S QD is a promising material for efficient extraction of charges from MEG and that QDs prepared by SILAR have an advantageous electrical contact facilitating charge separation and extraction.

Organimetallic Fluorescent Complex Polymers For Light Emitting Applications

DOEpatents

Shi, Song Q.; So, Franky

1997-10-28

A fluorescent complex polymer with fluorescent organometallic complexes connected by organic chain spacers is utilized in the fabrication of light emitting devices on a substantially transparent planar substrate by depositing a first conductive layer having p-type conductivity on the planar surface of the substrate, depositing a layer of a hole transporting and electron blocking material on the first conductive layer, depositing a layer of the fluorescent complex polymer on the layer of hole transporting and electron blocking material as an electron transporting emissive layer and depositing a second conductive layer having n-type conductivity on the layer of fluorescent complex polymer.

Investigation on bandgap, diffraction, interference, and refraction effects of photonic crystal structure in GaN/InGaN LEDs for light extraction.

PubMed

Patra, Saroj Kanta; Adhikari, Sonachand; Pal, Suchandan

2014-06-20

In this paper, we have made a clear differentiation among bandgap, diffraction, interference, and refraction effects in photonic crystal structures (PhCs). For observing bandgap, diffraction, and refraction effects, PhCs are considered on the top p-GaN surface of light emitting diodes (LEDs), whereas for interference effect, hole type PhCs are considered to be embedded within n-GaN layer of LED. From analysis, it is observed that at a particular lattice periodicity, for which bandgap lies within the wavelength of interest shows a significant light extraction due to inhibition of guided mode. Beyond a certain periodicity, diffraction effect starts dominating and light extraction improves further. The interference effect is observed in embedded photonic crystal LEDs, where depth of etching supports constructive interference of outward light waves. We have also shed light on refraction effects exhibited by the PhCs and whether negative refraction properties of PhCs may be useful in case of LED light extraction.

Interfacial electronic structures revealed at the rubrene/CH3NH3PbI3 interface.

PubMed

Ji, Gengwu; Zheng, Guanhaojie; Zhao, Bin; Song, Fei; Zhang, Xiaonan; Shen, Kongchao; Yang, Yingguo; Xiong, Yimin; Gao, Xingyu; Cao, Liang; Qi, Dong-Chen

2017-03-01

The electronic structures of rubrene films deposited on CH 3 NH 3 PbI 3 perovskite have been investigated using in situ ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). It was found that rubrene molecules interacted weakly with the perovskite substrate. Due to charge redistribution at their interface, a downward 'band bending'-like energy shift of ∼0.3 eV and an upward band bending of ∼0.1 eV were identified at the upper rubrene side and the CH 3 NH 3 PbI 3 substrate side, respectively. After the energy level alignment was established at the rubrene/CH 3 NH 3 PbI 3 interface, its highest occupied molecular orbital (HOMO)-valence band maximum (VBM) offset was found to be as low as ∼0.1 eV favoring the hole extraction with its lowest unoccupied molecular orbital (LUMO)-conduction band minimum (CBM) offset as large as ∼1.4 eV effectively blocking the undesired electron transfer from perovskite to rubrene. As a demonstration, simple inverted planar solar cell devices incorporating rubrene and rubrene/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hole transport layers (HTLs) were fabricated in this work and yielded a champion power conversion efficiency of 8.76% and 13.52%, respectively. Thus, the present work suggests that a rubrene thin film could serve as a promising hole transport layer for efficient perovskite-based solar cells.

Dependence of the Carrier Transport Characteristics on the Buried Layer Thickness in Ambipolar Double-Layer Organic Field-Effect Transistors Investigated by Electrical and Optical Measurements

NASA Astrophysics Data System (ADS)

Zhang, Le; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2013-05-01

By using current-voltage (I-V) measurements and optical modulation spectroscopy, we investigated the dependence of the carrier behaviour on the film thickness of the buried pentacene layer in C60/pentacene ambipolar double-layer organic field-effect transistors (OFETs). It was found that the buried pentacene layer not only acted as a hole transport layer, but also accounted for the properties of the C60/pentacene interface. The hole and electron behaviour exhibited different thickness dependence on the buried pentacene layer, implying the presence of the spatially separated conduction paths. It was suggested that the injected holes transported along the pentacene/gate dielectric interface, which were little affected by the buried pentacene layer thickness or the upper C60 layer; while, the injected electrons accumulated at the C60/pentacene interface, which were sensitive to the interfacial conditions or the buried pentacene layer. Furthermore, it was suggested that the enhanced surface roughness of the buried pentacene layer was responsible for the observed electron behaviour, especially when dpent>10 nm.

Thermally Cross-Linkable Hole Transport Materials for Solution Processed Phosphorescent OLEDs

NASA Astrophysics Data System (ADS)

Kim, Beom Seok; Kim, Ohyoung; Chin, Byung Doo; Lee, Chil Won

2018-04-01

Materials for unique fabrication of a solution-processed, multi-layered organic light-emitting diode (OLED) were developed. Preparation of a hole transport layer with a thermally cross-linkable chemical structure, which can be processed to form a thin film and then transformed into an insoluble film by using an amine-alcohol condensation reaction with heat treatment, was investigated. Functional groups, such as triplenylamine linked with phenylcarbazole or biphenyl, were employed in the chemical structure of the hole transport layer in order to maintain high triplet energy properties. When phenylcarbazole or biphenyl compounds continuously react with triphenylamine under acid catalysis, a chemically stable thin film material with desirable energy-level properties for a blue OLED could be obtained. The prepared hole transport materials showed excellent surface roughness and thermal stability in comparison with the commercial reference material. On the solution-processed model hole transport layer, we fabricated a device with a blue phosphorescent OLED by using sequential vacuum deposition. The maximum external quantum, 19.3%, was improved by more than 40% over devices with the commercial reference material (11.4%).

Universal intrinsic scale of the hole concentration in high- Tc cuprates

NASA Astrophysics Data System (ADS)

Honma, T.; Hor, P. H.; Hsieh, H. H.; Tanimoto, M.

2004-12-01

We have measured thermoelectric power (TEP) as a function of hole concentration per CuO2 layer Ppl in Y1-xCaxBa2Cu3O6 (Ppl=x/2) with no oxygen in the Cu-O chain layer. The room-temperature TEP as a function of Ppl , S290(Ppl) , of Y1-xCaxBa2Cu3O6 behaves identically to that of La2-zSrzCuO4 (Ppl=z) . We argue that S290(Ppl) represents a measure of the intrinsic equilibrium electronic states of doped holes and, therefore, can be used as a common scale for the carrier concentrations of layered cuprates. We shows that the Ppl determined by this new universal scale is consistent with both hole concentration microscopically determined by NQR and the hole concentration macroscopically determined by the formal valency of Cu . We find two characteristic scaling temperatures, TS* and TS2* , in the TEP versus temperature curves that change systematically with doping. Based on the universal scale, we uncover a universal phase diagram in which almost all the experimentally determined pseudogap temperatures as a function of Ppl fall on two common curves; lower pseudogap temperature defined by the TS* versus Ppl curve and upper pseudogap temperature defined by the TS2* versus Ppl curve. We find that while pseudogaps are intrinsic properties of doped holes of a single CuO2 layer for all high- Tc cuprates, Tc depends on the number of layers, therefore, the inter layer coupling, in each individual system.

Energy level alignment at the methylammonium lead iodide/copper phthalocyanine interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Shi; Goh, Teck Wee; Sum, Tze Chien, E-mail: Alfred@ntu.edu.sg, E-mail: Tzechien@ntu.edu.sg

2014-08-01

The energy level alignment at the CH{sub 3}NH{sub 3}PbI{sub 3}/copper phthalocyanine (CuPc) interface is investigated by X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). XPS reveal a 0.3 eV downward band bending in the CuPc film. UPS validate this finding and further reveal negligible interfacial dipole formation – verifying the viability of vacuum level alignment. The highest occupied molecular orbital of CuPc is found to be closer to the Fermi level than the valance band maximum of CH{sub 3}NH{sub 3}PbI{sub 3}, facilitating hole transfer from CH{sub 3}NH{sub 3}PbI{sub 3} to CuPc. However, subsequent hole extraction from CuPc may bemore » impeded by the downward band bending in the CuPc layer.« less

Micromachined mold-type double-gated metal field emitters

NASA Astrophysics Data System (ADS)

Lee, Yongjae; Kang, Seokho; Chun, Kukjin

1997-12-01

Electron field emitters with double gates were fabricated using micromachining technology and the effect of the electric potential of the focusing gate (or second gate) was experimentally evaluated. The molybdenum field emission tip was made by filling a cusplike mold formed when a conformal film was deposited on the hole-trench that had been patterned on stacked metals and dielectric layers. The hole-trench was patterned by electron beam lithography and reactive ion etching. Each field emitter has a 0960-1317/7/4/009/img1 diameter extraction gate (or first gate) and a 0960-1317/7/4/009/img2 diameter focusing gate (or second gate). To make a path for the emitted electrons, silicon bulk was etched anisotropically in KOH and EDP (ethylene-diamine pyrocatechol) solution successively. The I - V characteristics and anode current change due to the focusing gate potential were measured.

Recombination zone in white organic light emitting diodes with blue and orange emitting layers

NASA Astrophysics Data System (ADS)

Tsuboi, Taiju; Kishimoto, Tadashi; Wako, Kazuhiro; Matsuda, Kuniharu; Iguchi, Hirofumi

2012-10-01

White fluorescent OLED devices with a 10 nm thick blue-emitting layer and a 31 nm thick orange-emitting layer have been fabricated, where the blue-emitting layer is stacked on a hole transport layer. An interlayer was inserted between the two emitting layers. The thickness of the interlayer was changed among 0.3, 0.4, and 1.0 nm. White emission with CIE coordinates close to (0.33, 0.33) was observed from all the OLEDs. OLED with 0.3 nm thick interlayer gives the highest maximum luminous efficiency (11 cd/A), power efficiency (9 lm/W), and external quantum efficiency (5.02%). The external quantum efficiency becomes low with increasing the interlayer thickness from 0 nm to 1.0 nm. When the location of the blue- and orange-emitting layers is reversed, white emission was not obtained because of too weak blue emission. It is suggested that the electron-hole recombination zone decreases nearly exponentially with a distance from the hole transport layer.

Single-Band and Dual-Band Infrared Detectors

NASA Technical Reports Server (NTRS)

Ting, David Z. (Inventor); Gunapala, Sarath D. (Inventor); Soibel, Alexander (Inventor); Nguyen, Jean (Inventor); Khoshakhlagh, Arezou (Inventor)

2015-01-01

Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

Single-Band and Dual-Band Infrared Detectors

NASA Technical Reports Server (NTRS)

Ting, David Z. (Inventor); Gunapala, Sarath D. (Inventor); Soibel, Alexander (Inventor); Nguyen, Jean (Inventor); Khoshakhlagh, Arezou (Inventor)

2017-01-01

Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes.

PubMed

Li, Luping; Zhang, Yonghui; Xu, Shu; Bi, Wengang; Zhang, Zi-Hui; Kuo, Hao-Chung

2017-10-24

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

PubMed Central

Li, Luping; Zhang, Yonghui; Kuo, Hao-Chung

2017-01-01

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs. PMID:29073738

Effects of bleed-hole geometry and plenum pressure on three-dimensional shock-wave/boundary-layer/bleed interactions

NASA Technical Reports Server (NTRS)

Chyu, Wei J.; Rimlinger, Mark J.; Shih, Tom I.-P.

1993-01-01

A numerical study was performed to investigate 3D shock-wave/boundary-layer interactions on a flat plate with bleed through one or more circular holes that vent into a plenum. This study was focused on how bleed-hole geometry and pressure ratio across bleed holes affect the bleed rate and the physics of the flow in the vicinity of the holes. The aspects of the bleed-hole geometry investigated include angle of bleed hole and the number of bleed holes. The plenum/freestream pressure ratios investigated range from 0.3 to 1.7. This study is based on the ensemble-averaged, 'full compressible' Navier-Stokes (N-S) equations closed by the Baldwin-Lomax algebraic turbulence model. Solutions to the ensemble-averaged N-S equations were obtained by an implicit finite-volume method using the partially-split, two-factored algorithm of Steger on an overlapping Chimera grid.

Efficient and ultraviolet durable planar perovskite solar cells via a ferrocenecarboxylic acid modified nickel oxide hole transport layer.

PubMed

Zhang, Jiankai; Luo, Hui; Xie, Weijia; Lin, Xuanhuai; Hou, Xian; Zhou, Jianping; Huang, Sumei; Ou-Yang, Wei; Sun, Zhuo; Chen, Xiaohong

2018-03-28

Planar perovskite solar cells (PSCs) that use nickel oxide (NiO x ) as a hole transport layer have recently attracted tremendous attention because of their excellent photovoltaic efficiencies and simple fabrication. However, the electrical conductivity of NiO x and the interface contact properties of the NiO x /perovskite layer are always limited for the NiO x layer fabricated at a relatively low annealing temperature. Ferrocenedicarboxylic acid (FDA) was firstly introduced to modify a p-type NiO x hole transport layer in PSCs, which obviously improves the crystallization of the perovskite layer and hole transport and collection abilities and reduces carrier recombination. PSCs with a FDA modified NiO x layer reached a PCE of 18.20%, which is much higher than the PCE (15.13%) of reference PSCs. Furthermore, PSCs with a FDA interfacial modification layer show better UV durability and a hysteresis-free effect and still maintain the original PCE value of 49.8%after being exposed to UV for 24 h. The enhanced performance of the PSCs is attributed to better crystallization of the perovskite layer, the passivation effect of FDA, superior interface contact at the NiO x /perovskite layers and enhancement of the electrical conductivity of the FDA modified NiO x layer. In addition, PSCs with FDA inserted at the interface of the perovskite/PCBM layers can also improve the PCE to 16.62%, indicating that FDA have dual functions to modify p-type and n-type carrier transporting layers.

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO 2 Contact

DOE PAGES

Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; ...

2014-09-25

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (~10 nm) of amorphous TiO 2 deposited at 120°C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. Lastly, a hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency ofmore » 19.2%.« less

Influences of device structures on microstructure-correlated photovoltaic characteristics of organic solar cells

NASA Astrophysics Data System (ADS)

Wu, Fu-Chiao; Yang, Cheng-Chi; Tseng, Po-Tsung; Chou, Wei-Yang; Cheng, Horng-Long

2017-02-01

Photovoltaic characteristics of organic solar cells (OSCs) are correlated with microstructural qualities of active layers (ALs). Numerous efforts focused on improving process conditions of ALs to attain effective microstructures to achieve high-efficiency OSCs. Aside from AL process conditions, layer properties under AL can also influence microstructural qualities of AL. In this study, we adopted poly(3-hexylthiophene) (P3HT):(6,6)-phenyl C61-butyric acid methyl ester (PCBM) mixture as AL, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) as hole extraction layer, and branched polyethyleneimine (BPEI) as electron extraction layer to prepare OSCs with different device structures, that is, normal type (PEDOT:PSS/P3HT:PCBM/BPEI) and inverted type (BPEI/P3HT:PCBM/PEDOT:PSS) structures. We discovered that although devices have similar layer components, they have different photovoltaic characteristics. Inverted devices demonstrated higher power conversion efficiency than normal devices. Various methods, including absorption spectroscopy and microscopy, were used to study AL microstructures of different devices. We observed that P3HT crystallites grown on BPEI had longer vertical size and shorter horizontal size compared with those grown on PEDOT:PSS; these properties could result from larger interfacial tension of P3HT with BPEI than with PEDOT:PSS. Observed shape of P3HT crystallites in inverted devices facilitated efficient charge transport to electrodes and suppressed current leakage. As a result, inverted devices generated improved photovoltaic performance.

A variational Monte Carlo study of different spin configurations of electron-hole bilayer

NASA Astrophysics Data System (ADS)

Sharma, Rajesh O.; Saini, L. K.; Bahuguna, Bhagwati Prasad

2018-05-01

We report quantum Monte Carlo results for mass-asymmetric electron-hole bilayer (EHBL) system with different-different spin configurations. Particularly, we apply a variational Monte Carlo method to estimate the ground-state energy, condensate fraction and pair-correlations function at fixed density rs = 5 and interlayer distance d = 1 a.u. We find that spin-configuration of EHBL system, which consists of only up-electrons in one layer and down-holes in other i.e. ferromagnetic arrangement within layers and anti-ferromagnetic across the layers, is more stable than the other spin-configurations considered in this study.

Control of shock-wave boundary-layer interactions by bleed in supersonic mixed compression inlets

NASA Technical Reports Server (NTRS)

Fukuda, M. K.; Reshotko, E.; Hingst, W. R.

1975-01-01

An experimental investigation has been conducted to determine the effect of bleed region geometry and bleed rate on shock wave-boundary layer interactions in an axisymmetric, mixed-compression inlet at a Mach number of 2.5. The full realizable reduction in transformed form factor is obtained by bleeding off about half the incident boundary layer mass flow. Bleeding upstream or downstream of the shock-induced pressure rise is preferable to bleeding across the shock-induced pressure rise. Slanted holes are more effective than normal holes. Two different bleed hole sizes were tested without detectable difference in performance.

Non-linear collisional Penrose process: How much energy can a black hole release?

NASA Astrophysics Data System (ADS)

Nakao, Ken-ichi; Okawa, Hirotada; Maeda, Kei-ichi

2018-01-01

Energy extraction from a rotating or charged black hole is one of the fascinating issues in general relativity. The collisional Penrose process is one such extraction mechanism and has been reconsidered intensively since Bañados, Silk, and West pointed out the physical importance of very high energy collisions around a maximally rotating black hole. In order to get results analytically, the test particle approximation has been adopted so far. Successive works based on this approximation scheme have not yet revealed the upper bound on the efficiency of the energy extraction because of the lack of backreaction. In the Reissner-Nordström spacetime, by fully taking into account the self-gravity of the shells, we find that there is an upper bound on the extracted energy that is consistent with the area law of a black hole. We also show one particular scenario in which almost the maximum energy extraction is achieved even without the Bañados-Silk-West collision.

Study of pharmacological activities of methanol extract of Jatropha gossypifolia fruits.

PubMed

Apu, Apurba Sarker; Hossain, Faruq; Rizwan, Farhana; Bhuyan, Shakhawat Hossan; Matin, Maima; Jamaluddin, A T M

2012-12-01

The present study was carried out to investigate the possible in vivo analgesic, neuropharmacological and anti-diarrheal activities of the methanol extract of Jatropha gossypifolia fruits. The analgesic activity was measured by acetic acid induced writhing inhibition test. The neuropharmacological activities were evaluated by hole cross, hole-board, and elevated plus-maze (EPM) tests and the anti-diarrheal activity was assessed by castor oil induced diarrhea inhibition method. The extract showed highly significant (P < 0.001) analgesic activity with % inhibitions of writhing response at doses 200 and 400 mg/kg body weight were 77.86% and 71.25%, respectively. The extract at both doses showed significant (P < 0.05) sedative effect in-hole cross test. In-hole board test, the extract showed highly significant (P < 0.001) anxiolytic activity at lower dose whereas this activity was observed at higher dose in EPM test. The extract also showed highly significant (P < 0.001) anti-diarrheal activity. The findings of the study clearly indicate the presence of significant analgesic, neuropharmacological and anti-diarrheal properties of the plant, which demands further investigation including, compound isolation.

Extracting black-hole rotational energy: The generalized Penrose process

NASA Astrophysics Data System (ADS)

Lasota, J.-P.; Gourgoulhon, E.; Abramowicz, M.; Tchekhovskoy, A.; Narayan, R.

2014-01-01

In the case involving particles, the necessary and sufficient condition for the Penrose process to extract energy from a rotating black hole is absorption of particles with negative energies and angular momenta. No torque at the black-hole horizon occurs. In this article we consider the case of arbitrary fields or matter described by an unspecified, general energy-momentum tensor Tμν and show that the necessary and sufficient condition for extraction of a black hole's rotational energy is analogous to that in the mechanical Penrose process: absorption of negative energy and negative angular momentum. We also show that a necessary condition for the Penrose process to occur is for the Noether current (the conserved energy-momentum density vector) to be spacelike or past directed (timelike or null) on some part of the horizon. In the particle case, our general criterion for the occurrence of a Penrose process reproduces the standard result. In the case of relativistic jet-producing "magnetically arrested disks," we show that the negative energy and angular-momentum absorption condition is obeyed when the Blandford-Znajek mechanism is at work, and hence the high energy extraction efficiency up to ˜300% found in recent numerical simulations of such accretion flows results from tapping the black hole's rotational energy through the Penrose process. We show how black-hole rotational energy extraction works in this case by describing the Penrose process in terms of the Noether current.

Insight into the CH3NH3PbI3/C interface in hole-conductor-free mesoscopic perovskite solar cells.

PubMed

Li, Jiangwei; Niu, Guangda; Li, Wenzhe; Cao, Kun; Wang, Mingkui; Wang, Liduo

2016-08-07

Perovskite solar cells (PSCs) with hole-conductor-free mesoscopic architecture have shown superb stability and great potential in practical application. The printable carbon counter electrodes take full responsibility of extracting holes from the active CH3NH3PbI3 absorbers. However, an in depth study of the CH3NH3PbI3/C interface properties, such as the structural formation process and the effect of interfacial conditions on hole extraction, is still lacking. Herein, we present, for the first time, an insight into the spatial confinement induced CH3NH3PbI3/C interface formation by in situ photoluminescence observations during the crystallization process of CH3NH3PbI3. The derived reaction kinetics allows a quantitative description of the perovskite formation process. In addition, we found that the interfacial contact between carbon and perovskite was dominant for hole extraction efficiency and associated with the photovoltaic parameter of short circuit current density (JSC). Consequently, we conducted a solvent vapor assisted process of PbI2 diffusion to carefully control the CH3NH3PbI3/C interface with less unreacted PbI2 barrier. The improvement of interface conditions thereby contributes to a high hole extraction proved by the charge extraction resistance and PL lifetime change, resulting in the increased JSC valve.

M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features

DOEpatents

Brueck, Steven R.J.; Chen, Xiaolan; Zaidi, Saleem; Devine, Daniel J.

1998-06-02

Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.

Hybrid heterojunction solar cell based on organic-inorganic silicon nanowire array architecture.

PubMed

Shen, Xiaojuan; Sun, Baoquan; Liu, Dong; Lee, Shuit-Tong

2011-12-07

Silicon nanowire arrays (SiNWs) on a planar silicon wafer can be fabricated by a simple metal-assisted wet chemical etching method. They can offer an excellent light harvesting capability through light scattering and trapping. In this work, we demonstrated that the organic-inorganic solar cell based on hybrid composites of conjugated molecules and SiNWs on a planar substrate yielded an excellent power conversion efficiency (PCE) of 9.70%. The high efficiency was ascribed to two aspects: one was the improvement of the light absorption by SiNWs structure on the planar components; the other was the enhancement of charge extraction efficiency, resulting from the novel top contact by forming a thin organic layer shell around the individual silicon nanowire. On the contrary, the sole planar junction solar cell only exhibited a PCE of 6.01%, due to the lower light trapping capability and the less hole extraction efficiency. It indicated that both the SiNWs structure and the thin organic layer top contact were critical to achieve a high performance organic/silicon solar cell. © 2011 American Chemical Society

Carrier mobility enhancement of nano-crystalline semiconductor films: Incorporation of redox -relay species into the grain boundary interface

NASA Astrophysics Data System (ADS)

Desilva, L. A.; Bandara, T. M. W. J.; Hettiarachchi, B. H.; Kumara, G. R. A.; Perera, A. G. U.; Rajapaksa, R. M. G.; Tennakone, K.

Dye-sensitized and perovskite solar cells and other nanostructured heterojunction electronic devices require securing intimate electronic contact between nanostructured surfaces. Generally, the strategy is solution phase coating of a hole -collector over a nano-crystalline high-band gap n-type oxide semiconductor film painted with a thin layer of the light harvesting material. The nano-crystallites of the hole - collector fills the pores of the painted oxide surface. Most ills of these devices are associated with imperfect contact and high resistance of the hole conducting layer constituted of nano-crystallites. Denaturing of the delicate light harvesting material forbid sintering at elevated temperatures to reduce the grain boundary resistance. It is found that the interfacial and grain boundary resistance can be significantly reduced via incorporation of redox species into the interfaces to form ultra-thin layers. Suitable redox moieties, preferably bonded to the surface, act as electron transfer relays greatly reducing the film resistance offerring a promising method of enhancing the effective hole mobility of nano-crystalline hole-collectors and developing hole conductor paints for application in nanostructured devices.

SLS complementary logic devices with increase carrier mobility

DOEpatents

Chaffin, R.J.; Osbourn, G.C.; Zipperian, T.E.

1991-07-09

In an electronic device comprising a semiconductor material and having at least one performance characteristic which is limited by the mobility of holes in the semiconductor material, said mobility being limited because of a valence band degeneracy among high-mobility and low-mobility energy levels accessible to said holes at the energy-momentum space maximum, an improvement is provided wherein the semiconductor material is a strained layer superlattice (SLS) whose layer compositions and layer thicknesses are selected so that the strain on the layers predominantly containing said at least one carrier type splits said degeneracy and modifies said energy levels around said energy-momentum space maximum in a manner whereby said limitation on the mobility of said holes is alleviated. 5 figures.

SLS complementary logic devices with increase carrier mobility

DOEpatents

Chaffin, Roger J.; Osbourn, Gordon C.; Zipperian, Thomas E.

1991-01-01

In an electronic device comprising a semiconductor material and having at least one performance characteristic which is limited by the mobility of holes in the semiconductor material, said mobility being limited because of a valence band degeneracy among high-mobility and low-mobility energy levels accessible to said holes at the energy-momentum space maximum, an improvement is provided wherein the semiconductor material is a strained layer superlattice (SLS) whose layer compositions and layer thicknesses are selected so that the strain on the layers predominantly containing said at least one carrier type splits said degeneracy and modifies said energy levels around said energy-momentum space maximum in a manner whereby said limitation on the mobility of said holes is alleviated.

Effects of Smoke on Functional Circuits

DTIC Science & Technology

1997-10-01

functional boards consisted of four layers ; that is, there were two pieces of FR-4* insulated circuit board material that were laminated together, each with...traces on both sides (three layers of dielectric in all). The layers were electrically connected by drilling holes into the circuit board and...allowing solder to flow through the holes and form "vias." For many of the circuits, one of the middle layers served as a ground plane, while the other

Bonded and Stitched Composite Structure

NASA Technical Reports Server (NTRS)

Zalewski, Bart F. (Inventor); Dial, William B. (Inventor)

2014-01-01

A method of forming a composite structure can include providing a plurality of composite panels of material, each composite panel having a plurality of holes extending through the panel. An adhesive layer is applied to each composite panel and a adjoining layer is applied over the adhesive layer. The method also includes stitching the composite panels, adhesive layer, and adjoining layer together by passing a length of a flexible connecting element into the plurality of holes in the composite panels of material. At least the adhesive layer is cured to bond the composite panels together and thereby form the composite structure.

Hole-to-surface resistivity measurements.

USGS Publications Warehouse

Daniels, J.J.

1983-01-01

Hole-to-surface resistivity measurements over a layered volcanic tuff sequence illustrate procedures for gathering, reducing, and interpreting hole-to-surface resistivity data. The magnitude and direction of the total surface electric field resulting from a buried current source is calculated from orthogonal potential difference measurements for a grid of closely spaced stations. A contour map of these data provides a detailed map of the distribution of the electric field away from the drill hole. Resistivity anomalies can be enhanced by calculating the difference between apparent resistivities calculated from the total surface electric field and apparent resistivities for a layered earth model.-from Author

The effects of electron and hole transport layer with the electrode work function on perovskite solar cells

NASA Astrophysics Data System (ADS)

Deng, Quanrong; Li, Yiqi; Chen, Lian; Wang, Shenggao; Wang, Geming; Sheng, Yonglong; Shao, Guosheng

2016-09-01

The effects of electron and hole transport layer with the electrode work function on perovskite solar cells with the interface defects were simulated by using analysis of microelectronic and photonic structures-one-dimensional (AMPS-1D) software. The simulation results suggest that TiO2 electron transport layer provides best device performance with conversion efficiency of 25.9% compared with ZnO and CdS. The threshold value of back electrode work function for Spiro-OMeTAD, NiO, CuI and Cu2O hole transport layer are calculated to be 4.9, 4.8, 4.7 and 4.9 eV, respectively, to reach the highest conversion efficiency. The mechanisms of device physics with various electron and hole transport materials are discussed in details. The device performance deteriorates gradually as the increased density of interface defects located at ETM/absorber or absorber/HTM. This research results can provide helpful guidance for materials and metal electrode choice for perovskite solar cells.

Measurement of N-Type 6H SiC Minority-Carrier Diffusion Lengths by Electron Bombardment of Schottky Barriers

NASA Technical Reports Server (NTRS)

Hubbard, S. M.; Tabib-Azar, M.; Balley, S.; Rybickid, G.; Neudeck, P.; Raffaelle, R.

2004-01-01

Minority-Carrier diffusion lengths of n-type 6H-SiC were measured using the electron-beam induced current (EBIC) technique. Experimental values of primary beam current, EBIC, and beam voltage were obtained for a variety of SIC samples. This data was used to calculate experimental diode efficiency vs. beam voltage curves. These curves were fit to theoretically calculated efficiency curves, and the diffusion length and metal layer thickness were extracted. The hole diffusion length in n-6H SiC ranged from 0.93 +/- 0.15 microns.

The Black Hole Universe Model

NASA Astrophysics Data System (ADS)

Zhang, Tianxi

2014-06-01

The black hole universe model is a multiverse model of cosmology recently developed by the speaker. According to this new model, our universe is a fully grown extremely supermassive black hole, which originated from a hot star-like black hole with several solar masses, and gradually grew up from a supermassive black hole with million to billion solar masses to the present state with trillion-trillion solar masses by accreting ambient matter or merging with other black holes. The entire space is structured with infinite layers or universes hierarchically. The innermost three layers include the universe that we live, the inside star-like and supermassive black holes called child universes, and the outside space called mother universe. The outermost layer is infinite in mass, radius, and entropy without an edge and limits to zero for both the matter density and absolute temperature. All layers are governed by the same physics and tend to expand physically in one direction (outward or the direction of increasing entropy). The expansion of a black hole universe decreases its density and temperature but does not alter the laws of physics. The black hole universe evolves iteratively and endlessly without a beginning. When one universe expands out, a new similar one is formed from inside star-like and supermassive black holes. In each of iterations, elements are resynthesized, matter is reconfigurated, and the universe is renewed rather than a simple repeat. The black hole universe is consistent with the Mach principle, observations, and Einsteinian general relativity. It has only one postulate but is able to explain all phenomena occurred in the universe with well-developed physics. The black hole universe does not need dark energy for acceleration and an inflation epoch for flatness, and thus has a devastating impact on the big bang model. In this talk, I will present how this new cosmological model explains the various aspects of the universe, including the origin, structure, evolution, expansion, background radiation, acceleration, anisotropy, quasars, gamma-ray bursts, nucleosynthesis, etc., and compares to the big bang model.

Causes and effects of a hole. [in Antarctic ozone layer

NASA Technical Reports Server (NTRS)

Margitan, J. J.

1987-01-01

Preliminary results from the U.S. National Ozone Expedition (NOZE) to Antarctica are reviewed. The NOZE ozonesonde measurements showed significant vertical structure in the hole, with 80 percent depletion in some of the 1 km layers but only 20 percent in adjacent layers. The depletion was confined to the 12-20 km region, beginning first at higher altitude and progressing downward. This is strong evidence against the theory that the ozone hole is due to solar activity producing odd nitrogen at high altitudes which is transported downwards, leading to enhanced odd-nitrogen catalytic cycles that destroy ozone. Nitrous oxide data show unusually low concentrations within the polar vortex, which is evidence against the theory that the hole is caused by a purely dynamical mechanism in which rising air motions within the polar vortex lead to reduced column densities of ozone. It is tentatively concluded that a chemical mechanism involving man-made chlorofluorocarbons is the likely cause of ozone depletion in the hole.

Enhanced Efficiency of Polymer Light-Emitting Diodes by Dispersing Dehydrated Nanotube Titanic Acid in the Hole-buffer Layer

NASA Astrophysics Data System (ADS)

Qian, L.; Xu, Z.; Teng, F.; Duan, X.-X.; Jin, Z.-S.; Du, Z.-L.; Li, F.-S.; Zheng, M.-J.; Wang, Y.-S.

2007-06-01

Efficiency of polymer light-emitting diodes (PLEDs) with poly(2-methoxy-5-(2-ethyl hexyloxy)- p-phenylene vinylene) (MEH-PPV) as an emitting layer was improved if a dehydrated nanotubed titanic acid (DNTA) doped hole-buffer layer polyethylene dioxythiophene (PEDOT) was used. Photoluminescence (PL) and Raman spectra indicated a stronger interaction between DNTA and sulfur atom in thiophene of PEDOT, which suppresses the chemical interaction between vinylene of MEH-PPV and thiophene of PEDOT. The interaction decreases the defect states in an interface region to result in enhancement in device efficiency, even though the hole transporting ability of PEDOT was decreased.

Study of pharmacological activities of methanol extract of Jatropha gossypifolia fruits

PubMed Central

Apu, Apurba Sarker; Hossain, Faruq; Rizwan, Farhana; Bhuyan, Shakhawat Hossan; Matin, Maima; Jamaluddin, A.T.M

2012-01-01

Objective: The present study was carried out to investigate the possible in vivo analgesic, neuropharmacological and anti-diarrheal activities of the methanol extract of Jatropha gossypifolia fruits. Materials and Methods: The analgesic activity was measured by acetic acid induced writhing inhibition test. The neuropharmacological activities were evaluated by hole cross, hole-board, and elevated plus-maze (EPM) tests and the anti-diarrheal activity was assessed by castor oil induced diarrhea inhibition method. Findings: The extract showed highly significant (P < 0.001) analgesic activity with % inhibitions of writhing response at doses 200 and 400 mg/kg body weight were 77.86% and 71.25%, respectively. The extract at both doses showed significant (P < 0.05) sedative effect in-hole cross test. In-hole board test, the extract showed highly significant (P < 0.001) anxiolytic activity at lower dose whereas this activity was observed at higher dose in EPM test. The extract also showed highly significant (P < 0.001) anti-diarrheal activity. Conclusion: The findings of the study clearly indicate the presence of significant analgesic, neuropharmacological and anti-diarrheal properties of the plant, which demands further investigation including, compound isolation. PMID:24808665

Variable Gap Conjugated Polymers

DTIC Science & Technology

2005-12-01

conducting gold interfacial layer interjected between the ITO glass electrode and the PEDOT/PSS hole transport layer . A family of low band gap, and near IR...which can be used as both electrochromics and as the hole transport layers in light emitting diodes. Hybrid electrochromic and electroluminescent (EC...MEH-PPV, P3HT, etc.) in order to blanket the solar spectrum. Initial device results on these multi-component blends are promising. In addition, we

The competition between the liquid-liquid dewetting and the liquid-solid dewetting.

PubMed

Xu, Lin; Shi, Tongfei; An, Lijia

2009-05-14

We investigate the dewetting behavior of the bilayer of air/PS/PMMA/silanized Si wafer and find the two competing dewetting pathways in the dewetting process. The upper layer dewets on the lower layer (dewetting pathway 1, the liquid-liquid dewetting) and the two layers rupture on the solid substrate (dewetting pathway 2, the liquid-solid dewetting). To the two competing dewetting pathways, the process of forming holes and the process of hole growth, influence their competing relation. In the process of forming holes, the time of forming holes is a main factor that influences their competing relation. During the process of hole growth, the dewetting velocity is a main factor that influences their competing relation. The liquid-liquid interfacial tension, the film thickness of the polymer, and the viscosity of the polymer are important factors that influence the time of forming holes and the dewetting velocity. When the liquid-liquid dewetting pathway and the liquid-solid dewetting pathway compete in the dewetting process, the competing relation can be controlled by changing the molecular weight of the polymer, the film thickness, and the annealing temperature. In addition, it is also found that the rim growth on the solid substrate is by a rolling mechanism in the process of hole growth.

Numerical study of the light output intensity of the bilayer organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Lu, Feiping

2017-02-01

The structure of organic light-emitting diodes (OLEDs) is one of most important issues that influence the light output intensity (LOI) of OLEDs. In this paper, based on a simple but accurate optical model, the influences of hole and electron transport layer thickness on the LOI of bilayer OLEDs, which with N,N0- bis(naphthalen-1-yl)-N,N0- bis(phenyl)- benzidine (NPB) or N,N'- diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4-diamine (TPD) as hole transport layer, with tris(8-hydroxyquinoline) aluminum (Alq3) as electron transport and light emitting layers, were investigated. The laws of LOI for OLEDs under different organic layer thickness values were obtained. The results show that the LOI of devices varies in accordance with damped cosine or sine function as the increasing of organic layer thickness, and the results show that the bilayer OLEDs with the structure of Glass/ITO/NPB (55 nm)/Alq3 (75 nm)/Al and Glass/ITO/TPB (60 nm)/Alq3 (75 nm)/Al have most largest LOI. When the thickness of Alq3 is less than 105 nm, the OLEDs with TPD as hole transport layer have larger LOI than that with NPB as hole transport layer. The results obtained in this paper can present an in-depth understanding of the working mechanism of OLEDs and help ones fabricate high efficiency OLEDs.

A hot hole-programmed and low-temperature-formed SONOS flash memory

PubMed Central

2013-01-01

In this study, a high-performance TixZrySizO flash memory is demonstrated using a sol–gel spin-coating method and formed under a low annealing temperature. The high-efficiency charge storage layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride, followed by 60 s of annealing at 600°C. The flash memory exhibits a noteworthy hot hole trapping characteristic and excellent electrical properties regarding memory window, program/erase speeds, and charge retention. At only 6-V operation, the program/erase speeds can be as fast as 120:5.2 μs with a 2-V shift, and the memory window can be up to 8 V. The retention times are extrapolated to 106 s with only 5% (at 85°C) and 10% (at 125°C) charge loss. The barrier height of the TixZrySizO film is demonstrated to be 1.15 eV for hole trapping, through the extraction of the Poole-Frenkel current. The excellent performance of the memory is attributed to high trapping sites of the low-temperature-annealed, high-κ sol–gel film. PMID:23899050

Fulleropyrrolidinium Iodide As an Efficient Electron Transport Layer for Air-Stable Planar Perovskite Solar Cells.

PubMed

Huang, Jiabin; Yu, Xuegong; Xie, Jiangsheng; Li, Chang-Zhi; Zhang, Yunhai; Xu, Dikai; Tang, Zeguo; Cui, Can; Yang, Deren

2016-12-21

Organic-inorganic halide perovskite solar cells have attracted great attention in recent years. But there are still a lot of unresolved issues related to the perovskite solar cells such as the phenomenon of anomalous hysteresis characteristics and long-term stability of the devices. Here, we developed a simple three-layered efficient perovskite device by replacing the commonly employed PCBM electrical transport layer with an ultrathin fulleropyrrolidinium iodide (C 60 -bis) in an inverted p-i-n architecture. The devices with an ultrathin C 60 -bis electronic transport layer yield an average power conversion efficiency of 13.5% and a maximum efficiency of 15.15%. Steady-state photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements show that the high performance is attributed to the efficient blocking of holes and high extraction efficiency of electrons by C 60 -bis, due to a favorable energy level alignment between the CH 3 NH 3 PbI 3 and the Ag electrodes. The hysteresis effect and stability of our perovskite solar cells with C 60 -bis become better under indoor humidity conditions.

Effects of pilot holes on longitudinal miniscrew stability and bony adaptation.

PubMed

Carney, Lauren Ohlenforst; Campbell, Phillip M; Spears, Robert; Ceen, Richard F; Melo, Ana Cláudia; Buschang, Peter H

2014-11-01

The purposes of this study were to longitudinally evaluate the effects of pilot holes on miniscrew implant (MSI) stability and to determine whether the effects can be attributed to the quality or the quantity of bone surrounding the MSI. Using a randomized split-mouth design in 6 skeletally mature female foxhound-mix dogs, 17 MSIs (1.6 mm outer diameter) placed with pilot holes (1.1 mm) were compared with 17 identical MSIs placed without pilot holes. Implant stability quotient measurements of MSI stability were taken weekly for 7 weeks. Using microcomputed tomography with an isotropic resolution of 6 μm, bone volume fractions were measured for 3 layers of bone (6-24, 24-42, and 42-60 μm) surrounding the MSIs. At placement, the MSIs with pilot holes showed significantly (P <0.05) higher implant stability quotient values than did the MSIs placed without pilot holes (48.3 vs 47.5). Over time, the implant stability quotient values decreased significantly more for the MSIs placed with pilot holes than for those placed without pilot holes. After 7 weeks, the most coronal aspect of the 6- to 24-μm layer of cortical bone and the most coronal aspects of all 3 layers of trabecular bone showed significantly larger bone volume fractions for the MSIs placed without pilot holes than for those placed with pilot holes. MSIs placed with pilot holes show greater primary stability, but greater decreases in stability over time, due primarily to having less trabecular bone surrounding them. Copyright © 2014 American Association of Orthodontists. Published by Elsevier Inc. All rights reserved.

Electrical response of electron selective atomic layer deposited TiO2‑x heterocontacts on crystalline silicon substrates

NASA Astrophysics Data System (ADS)

Ahiboz, Doğuşcan; Nasser, Hisham; Aygün, Ezgi; Bek, Alpan; Turan, Raşit

2018-04-01

Integration of oxygen deficient sub-stoichiometric titanium dioxide (TiO2‑x) thin films as the electron transporting-hole blocking layer in solar cell designs are expected to reduce fabrication costs by eliminating high temperature processes while maintaining high conversion efficiencies. In this paper, we conducted a study to reveal the electrical properties of TiO2‑x thin films grown on crystalline silicon (c-Si) substrates by atomic layer deposition (ALD) technique. Effect of ALD substrate temperature, post deposition annealing, and doping type of the c-Si substrate on the interface states and TiO2‑x bulk properties were extracted by performing admittance (C-V, G-V) and current-voltage (J-V) measurements. Moreover, the asymmetry in C-V and J-V measurements between the p-n type and n-n TiO2‑x-c-Si heterojunction types were examined and the electron transport selectivity of TiO2‑x was revealed.

Fully solution-processing route toward highly transparent polymer solar cells.

PubMed

Guo, Fei; Kubis, Peter; Stubhan, Tobias; Li, Ning; Baran, Derya; Przybilla, Thomas; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J

2014-10-22

We report highly transparent polymer solar cells using metallic silver nanowires (AgNWs) as both the electron- and hole-collecting electrodes. The entire stack of the devices is processed from solution using a doctor blading technique. A thin layer of zinc oxide nanoparticles is introduced between photoactive layer and top AgNW electrode which plays decisive roles in device functionality: it serves as a mechanical foundation which allows the solution-deposition of top AgNWs, and more importantly it facilitates charge carriers extraction due to the better energy level alignment and the formation of ohmic contacts between the active layer/ZnO and ZnO/AgNWs. The resulting semitransparent polymer:fullerene solar cells showed a power conversion efficiency of 2.9%, which is 72% of the efficiency of an opaque reference device. Moreover, an average transmittance of 41% in the wavelength range of 400-800 nm is achieved, which is of particular interest for applications in transparent architectures.

Analytical and numerical analysis of charge carriers extracted by linearly increasing voltage in a metal-insulator-semiconductor structure relevant to bulk heterojunction organic solar cells

NASA Astrophysics Data System (ADS)

Yumnam, Nivedita; Hirwa, Hippolyte; Wagner, Veit

2017-12-01

Analysis of charge extraction by linearly increasing voltage is conducted on metal-insulator-semiconductor capacitors in a structure relevant to organic solar cells. For this analysis, an analytical model is developed and is used to determine the conductivity of the active layer. Numerical simulations of the transient current were performed as a way to confirm the applicability of our analytical model and other analytical models existing in the literature. Our analysis is applied to poly(3-hexylthiophene)(P3HT) : phenyl-C61-butyric acid methyl ester (PCBM) which allows to determine the electron and hole mobility independently. A combination of experimental data analysis and numerical simulations reveals the effect of trap states on the transient current and where this contribution is crucial for data analysis.

GaN Light-Emitting Triodes (LETs) for High-Efficiency Hole Injection and for Assessment of the Physical Origin of the Efficiency Droop

DTIC Science & Technology

2007-07-06

quantum efficiency . In AlGaN-based UV LEDs, an electron-blocking layer (EBL) is frequently inserted between the p-type cladding layer and the active...me). This limits the hole injection efficiency into the active region, and hence internal quantum efficiency . Figure 1: (a) Schematic band...less efficient than along the lateral direction because most of the holes ionized from the acceptors are localized inside the quantum wells which are

A Fast Measuring Method for the Inner Diameter of Coaxial Holes

PubMed Central

Wang, Lei; Yang, Fangyun; Fu, Luhua; Wang, Zhong; Yang, Tongyu; Liu, Changjie

2017-01-01

A new method for fast diameter measurement of coaxial holes is studied. The paper describes a multi-layer measuring rod that installs a single laser displacement sensor (LDS) on each layer. This method is easy to implement by rotating the measuring rod, and immune from detecting the measuring rod’s rotation angles, so all diameters of coaxial holes can be calculated by sensors’ values. While revolving, the changing angles of each sensor’s laser beams are approximately equal in the rod’s radial direction so that the over-determined nonlinear equations of multi-layer holes for fitting circles can be established. The mathematical model of the measuring rod is established, all parameters that affect the accuracy of measurement are analyzed and simulated. In the experiment, the validity of the method is verified, the inner diameter measuring precision of 28 μm is achieved by 20 μm linearity LDS. The measuring rod has advantages of convenient operation and easy manufacture, according to the actual diameters of coaxial holes, and also the varying number of holes, LDS’s mounting location can be adjusted for different parts. It is convenient for rapid diameter measurement in industrial use. PMID:28327499

A Fast Measuring Method for the Inner Diameter of Coaxial Holes.

PubMed

Wang, Lei; Yang, Fangyun; Fu, Luhua; Wang, Zhong; Yang, Tongyu; Liu, Changjie

2017-03-22

A new method for fast diameter measurement of coaxial holes is studied. The paper describes a multi-layer measuring rod that installs a single laser displacement sensor (LDS) on each layer. This method is easy to implement by rotating the measuring rod, and immune from detecting the measuring rod's rotation angles, so all diameters of coaxial holes can be calculated by sensors' values. While revolving, the changing angles of each sensor's laser beams are approximately equal in the rod's radial direction so that the over-determined nonlinear equations of multi-layer holes for fitting circles can be established. The mathematical model of the measuring rod is established, all parameters that affect the accuracy of measurement are analyzed and simulated. In the experiment, the validity of the method is verified, the inner diameter measuring precision of 28 μm is achieved by 20 μm linearity LDS. The measuring rod has advantages of convenient operation and easy manufacture, according to the actual diameters of coaxial holes, and also the varying number of holes, LDS's mounting location can be adjusted for different parts. It is convenient for rapid diameter measurement in industrial use.

Vapochromic LED

DOEpatents

Kunugi, Yoshihito; Mann, Kent R.; Miller, Larry L.; Exstrom, Christopher L.

2003-06-17

A sandwich device was prepared by electrodeposition of an insoluble layer of oligomerized tris(4-(2-thienyl)phenyl)amine onto conducting indium-tin oxide coated glass, spin coating the stacked platinum compound, tetrakis(p-decylphenylisocyano)platinum tetranitroplatinate, from toluene onto the oligomer layer, and then coating the platinum complex with aluminum by vapor deposition. This device showed rectification of current and gave electroluminescence. The electroluminescence spectrum (.lambda..sub.max =545 nm) corresponded to the photoluminescence spectrum of the platinum complex. Exposure of the device to acetone vapor caused the electroemission to shift to 575 nm. Exposure to toluene vapor caused a return to the original spectrum. These results demonstrate a new type of sensor that reports the arrival of organic vapors with an electroluminescent signal. The sensor comprises (a) a first electrode; (b) a hole transport layer formed on the first electrode; (c) a sensing/emitting layer formed on the hole transport layer, the sensing/emitting layer comprising a material that changes color upon exposure to the analyte vapors; (d) an electron conductor layer formed on the sensing layer; and (e) a second electrode formed on the electron conductor layer. The hole transport layer emits light at a shorter wavelength than the sensing/emitting layer and at least the first electrode comprises an optically transparent material.

Vapochromic LED

DOEpatents

Kunugi, Yoshihito; Mann, Kent R.; Miller, Larry L.; Exstrom, Christopher L.

2002-01-15

A sandwich device was prepared by electrodeposition of an insoluble layer of oligomerized tris(4-(2-thienyl)phenyl)amine onto conducting indium-tin oxide coated glass, spin coating the stacked platinum compound, tetrakis(p-decylphenylisocyano)platinum tetranitroplatinate, from toluene onto the oligomer layer, and then coating the platinum complex with aluminum by vapor deposition. This device showed rectification of current and gave electroluminescence. The electroluminescence spectrum (.mu..sub.max =545 nm) corresponded to the photoluminescence spectrum of the platinum complex. Exposure of the device to acetone vapor caused the electroemission to shift to 575 nm. Exposure to toluene vapor caused a return to the original spectrum. These results demonstrate a new type of sensor that reports the arrival of organic vapors with an electroluminescent signal. The sensor comprises (a) a first electrode; (b) a hole transport layer formed on the first electrode; (c) a sensing/emitting layer formed on the hole transport layer, the sensing/emitting layer comprising a material that changes color upon exposure to the analyte vapors; (d) an electron conductor layer formed on the sensing layer; and (e) a second electrode formed on the electron conductor layer. The hole transport layer emits light at a shorter wavelength than the sensing/emitting layer and at least the first electrode comprises an optically transparent material.

Heterojunction PbS nanocrystal solar cells with oxide charge-transport layers.

PubMed

Hyun, Byung-Ryool; Choi, Joshua J; Seyler, Kyle L; Hanrath, Tobias; Wise, Frank W

2013-12-23

Oxides are commonly employed as electron-transport layers in optoelectronic devices based on semiconductor nanocrystals, but are relatively rare as hole-transport layers. We report studies of NiO hole-transport layers in PbS nanocrystal photovoltaic structures. Transient fluorescence experiments are used to verify the relevant energy levels for hole transfer. On the basis of these results, planar heterojunction devices with ZnO as the photoanode and NiO as the photocathode were fabricated and characterized. Solution-processed devices were used to systematically study the dependence on nanocrystal size and achieve conversion efficiency as high as 2.5%. Optical modeling indicates that optimum performance should be obtained with thinner oxide layers than can be produced reliably by solution casting. Room-temperature sputtering allows deposition of oxide layers as thin as 10 nm, which enables optimization of device performance with respect to the thickness of the charge-transport layers. The best devices achieve an open-circuit voltage of 0.72 V and efficiency of 5.3% while eliminating most organic material from the structure and being compatible with tandem structures.

Tunneling Injection and Exciton Diffusion of White Organic Light-Emitting Diodes with Composed Buffer Layers

NASA Astrophysics Data System (ADS)

Yang, Su-Hua; Wu, Jian-Ping; Huang, Tao-Liang; Chung, Bin-Fong

2018-02-01

Four configurations of buffer layers were inserted into the structure of a white organic light emitting diode, and their impacts on the hole tunneling-injection and exciton diffusion processes were investigated. The insertion of a single buffer layer of 4,4'-bis(carbazol-9-yl)biphenyl (CBP) resulted in a balanced carrier concentration and excellent color stability with insignificant chromaticity coordinate variations of Δ x < 0.023 and Δ y < 0.023. A device with a 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) buffer layer was beneficial for hole tunneling to the emission layer, resulting in a 1.45-fold increase in current density. The tunneling of holes and the diffusion of excitons were confirmed by the preparation of a dual buffer layer of CBP:tris-(phenylpyridine)-iridine (Ir(ppy)3)/BCP. A maximum current efficiency of 12.61 cd/A with a luminance of 13,850 cd/m2 was obtained at 8 V when a device with a dual-buffer layer of CBP:6 wt.% Ir(ppy)3/BCP was prepared.

Doped hole transport layer for efficiency enhancement in planar heterojunction organolead trihalide perovskite solar cells

DOE PAGES

Wang, Qi; Bi, Cheng; Huang, Jinsong

2015-05-06

We demonstrated the efficiency of a solution-processed planar heterojunction organometallic trihalide perovskite solar cell can be increased to 17.5% through doping the hole transporting layer for reducing the resistivity. Doped Poly(triaryl amine) (PTAA) by 2,3,5,6-Tetrafluoro-7,7,8,8-Tetracyanoquinodimethane (F4-TCNQ) reduced device series resistance by three-folds, increasing the device fill factor to 74%, open circuit voltage to 1.09 V without sacrificing the short circuit current. As a result, this study reveals that the high resistivity of currently broadly applied polymer hole transport layer limits the device efficiency, and points a new direction to improve the device efficiency.

Strategy to Boost the Efficiency of Mixed-Ion Perovskite Solar Cells: Changing Geometry of the Hole Transporting Material.

PubMed

Zhang, Jinbao; Xu, Bo; Johansson, Malin B; Vlachopoulos, Nick; Boschloo, Gerrit; Sun, Licheng; Johansson, Erik M J; Hagfeldt, Anders

2016-07-26

The hole transporting material (HTM) is an essential component in perovskite solar cells (PSCs) for efficient extraction and collection of the photoinduced charges. Triphenylamine- and carbazole-based derivatives have extensively been explored as alternative and economical HTMs for PSCs. However, the improvement of their power conversion efficiency (PCE), as well as further investigation of the relationship between the chemical structure of the HTMs and the photovoltaic performance, is imperatively needed. In this respect, a simple carbazole-based HTM X25 was designed on the basis of a reference HTM, triphenylamine-based X2, by simply linking two neighboring phenyl groups in a triphenylamine unit through a carbon-carbon single bond. It was found that a lowered highest occupied molecular orbital (HOMO) energy level was obtained for X25 compared to that of X2. Besides, the carbazole moiety in X25 improved the molecular planarity as well as conductivity property in comparison with the triphenylamine unit in X2. Utilizing the HTM X25 in a solar cell with mixed-ion perovskite [HC(NH2)2]0.85(CH3NH3)0.15Pb(I0.85Br0.15)3, a highest reported PCE of 17.4% at 1 sun (18.9% under 0.46 sun) for carbazole-based HTM in PSCs was achieved, in comparison of a PCE of 14.7% for triphenylamine-based HTM X2. From the steady-state photoluminescence and transient photocurrent/photovoltage measurements, we conclude that (1) the lowered HOMO level for X25 compared to X2 favored a higher open-circuit voltage (Voc) in PSCs; (2) a more uniform formation of X25 capping layer than X2 on the surface of perovskite resulted in more efficient hole transport and charge extraction in the devices. In addition, the long-term stability of PSCs with X25 is significantly enhanced compared to X2 due to its good uniformity of HTM layer and thus complete coverage on the perovskite. The results provide important information to further develop simple and efficient small molecular HTMs applied in solar cells.

Carrier-injection studies in GaN-based light-emitting-diodes

NASA Astrophysics Data System (ADS)

Nguyen, Dinh Chuong; Vaufrey, David; Leroux, Mathieu

2015-09-01

Although p-type GaN has been achieved by Mg doping, the low hole-mobility still remains a difficulty for GaN-based light-emitting diodes (LEDs). Due to the lack of field-dependent-velocity model for holes, in GaN-based LED simulations, the hole mobility is usually supposed to remain constant. However, as the p-GaN-layer conductivity is lower than the n-GaN-layer conductivity, a strong electric-field exists in the p-side of an LED when the applied voltage exceeds the LED's built-in voltage. Under the influence of this field, the mobilities of electrons and holes are expected to decrease. Based on a field-dependent-velocity model that is usually used for narrow-bandgap materials, an LED structure is modelled with three arbitrarily chosen hole saturation-velocities. The results show that a hole saturation-velocity lower than 4x106 cm/s can negatively affect the LED's behaviors.

Surface hole gas enabled transparent deep ultraviolet light-emitting diode

NASA Astrophysics Data System (ADS)

Zhang, Jianping; Gao, Ying; Zhou, Ling; Gil, Young-Un; Kim, Kyoung-Min

2018-07-01

The inherent deep-level nature of acceptors in wide-band-gap semiconductors makes p-ohmic contact formation and hole supply difficult, impeding progress for short-wavelength optoelectronics and high-power high-temperature bipolar electronics. We provide a general solution by demonstrating an ultrathin rather than a bulk wide-band-gap semiconductor to be a successful hole supplier and ohmic contact layer. Free holes in this ultrathin semiconductor are assisted to activate from deep acceptors and swept to surface to form hole gases by a large electric field, which can be provided by engineered spontaneous and piezoelectric polarizations. Experimentally, a 6 nm thick AlN layer with surface hole gas had formed p-ohmic contact to metals and provided sufficient hole injection to a 280 nm light-emitting diode, demonstrating a record electrical-optical conversion efficiency exceeding 8.5% at 20 mA (55 A cm‑2). Our approach of forming p-type wide-band-gap semiconductor ohmic contact is critical to realizing high-efficiency ultraviolet optoelectronic devices.

Numerical results on the contribution of an earthworm hole to infiltration

NASA Astrophysics Data System (ADS)

Pezzotti, Dario; Barontini, Stefano; Casali, Federico; Comincini, Mattia; Peli, Marco; Ranzi, Roberto; Rizzo, Gabriele; Tomirotti, Massimo; Vitale, Paolo

2017-04-01

On 9 March 2016 the WormEx I experiment was launched at the experimental site of Cividate Camuno (274ma.s.l., Oglio river basin, Central Italian Alps), aiming at contributing to understand how the soil-fauna digging activity affects soil-water flow. Particularly the experiment investigates the effects of earthworms holes on the soil-water constitutive laws, in the uppermost layers of a shallow anthropized soil. In this framework a set of simulations of the water flow in presence of an earthworm hole was preliminarily performed. The FV-FD numerical code AdHydra was used to solve the Richards equation in an axis-symmetric 2D domain around a vertical earthworm hole. The hole was represented both as a void cylinder and as a virtual porous domain with typical constitutive laws of a Δ-soil. The hypothesis of Poiseuille flow and the Jourin-Borelli law applied to determine its conductivity and soil-water retention relationship. Different scenarios of hole depth and infiltration rate were explored. As a result a meaningful change in the downflow condition was observed when burrows intersect a layered soil, both in saturated and partially unsaturated soils, in case a perched water table onsets at the interface between an upper and more conductive soil layer and a lower and less conductive one. These results may contribute to a better understanding of the streamflow generation processes and soil-water movement in shallow layered soils.

Hole-to-surface resistivity measurements at Gibson Dome (drill hole GD-1) Paradox basin, Utah

USGS Publications Warehouse

Daniels, J.J.

1984-01-01

Hole-to-surface resistivity measurements were made in a deep drill hole (GD-1), in San Juan County, Utah, which penetrated a sequence of sandstone, shale, and evaporite. These measurements were made as part of a larger investigation to study the suitability of an area centered around the Gibson Dome structure for nuclear waste disposal. The magnitude and direction of the total electric field resulting from a current source placed in a drill hole is calculated from potential difference measurements for a grid of closely-spaced stations. A contour map of these data provides a detailed map of the distribution of the electric field away from the drill hole. Computation of the apparent resistivity from the total electric field helps to interpret the data with respect to the ideal situation of a layered earth. Repeating the surface measurements for different source depths gives an indication of variations in the geoelectric section with depth. The quantitative interpretation of the field data at Gibson Dome was hindered by the pressure of a conductive borehole fluid. However, a qualitative interpretation of the field data indicates the geoelectric section around drill hole GD-1 is not perfectly layered. The geoelectric section appears to dip to the northwest, and contains anomalies in the resistivity distribution that may be representative of localized thickening or folding of the salt layers.

High work-function hole transport layers by self-assembly using a fluorinated additive

DOE PAGES

Mauger, Scott A.; Li, Jun; Özmen, Özge Tüzün; ...

2013-10-30

The hole transport polymer poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) derives many of its favorable properties from a PSS-rich interfacial layer that forms spontaneously during coating. Since PEDOT:PSS is only usable as a blend it is not possible to study PEDOT:PSS without this interfacial layer. Through the use of the self-doped polymer sulfonated poly(thiophene-3-[2-(2-methoxyethoxy) ethoxy]-2,5-diyl) (S-P3MEET) and a polyfluorinated ionomer (PFI) it is possible to compare transparent conducting organic films with and without interfacial layers and to understand their function. Using neutron reflectometry, we show that PFI preferentially segregates at the top surface of the film during coating and forms a thermally stable surfacemore » layer. Because of this distribution we find that even small amounts of PFI increase the electron work function of the HTL. We also find that annealing at 150°C and above reduces the work function compared to samples heated at lower temperatures. Using near edge x-ray absorption fine structure spectroscopy and gas chromatography we show that this reduction in work function is due to S-P3MEET being doped by PFI. Organic photovoltaic devices with S-P3MEET/PFI hole transport layers yield higher power conversion efficiency than devices with pure S-P3MEET or PEDOT:PSS hole transport layers. Additionally, devices with a doped interface layer of S-P3MEET/PFI show superior performance to those with un-doped S-P3MEET.« less

Significant performance enhancement of inverted organic light-emitting diodes by using ZnIx as a hole-blocking layer

NASA Astrophysics Data System (ADS)

Cheng, Chuan-Hui; Zhang, Bi-Long; Sun, Chao; Li, Ruo-Xuan; Wang, Yuan; Tian, Wen-Ming; Zhao, Chun-Yi; Jin, Sheng-Ye; Liu, Wei-Feng; Luo, Ying-Min; Du, Guo-Tong; Cong, Shu-Lin

2017-06-01

A highly efficient inverted organic light emitting diode using 1.0 nm-thick ZnIx as a hole-blocking layer is developed. We fabricate devices with the configuration ITO/ZnIx (1.0 nm)/Alq3 (50 nm)/NPB (50 nm)/MoO3 (6.0 nm)/Al (100 nm). The deposition of a ZnIx layer increases the maximum luminance by two orders of magnitude from 13.4 to 3566.1 cd/m2. In addition, the maximum current efficiency and power efficiency are increased by three orders of magnitude, and the turn-on voltage to reach 1 cd/m2 decreases from 13 to 8 V. The results suggest that the electron injection efficiency is not improved by introducing a ZnIx layer. Instead, the improved device performance originates from the strong hole-blocking ability of ZnIx. This work indicates that layered materials may lead to novel applications in optoelectronic devices.

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

DOEpatents

Simpson, Lin Jay

2013-12-17

A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on the conductor layer (120, 220) and formed from a self-healing metal such as a metal that forms self-terminating oxides. A permeation plug or block (236) is formed in or adjacent to the thin film (130, 230) of metal at or proximate to the pin holes (224) to block further permeation of contaminants through the pin holes (224).

Long-range coupling of electron-hole pairs in spatially separated organic donor-acceptor layers

PubMed Central

Nakanotani, Hajime; Furukawa, Taro; Morimoto, Kei; Adachi, Chihaya

2016-01-01

Understanding exciton behavior in organic semiconductor molecules is crucial for the development of organic semiconductor-based excitonic devices such as organic light-emitting diodes and organic solar cells, and the tightly bound electron-hole pair forming an exciton is normally assumed to be localized on an organic semiconducting molecule. We report the observation of long-range coupling of electron-hole pairs in spatially separated electron-donating and electron-accepting molecules across a 10-nanometers-thick spacer layer. We found that the exciton energy can be tuned over 100 megaelectron volts and the fraction of delayed fluorescence can be increased by adjusting the spacer-layer thickness. Furthermore, increasing the spacer-layer thickness produced an organic light-emitting diode with an electroluminescence efficiency nearly eight times higher than that of a device without a spacer layer. Our results demonstrate the first example of a long-range coupled charge-transfer state between electron-donating and electron-accepting molecules in a working device. PMID:26933691

Efficiency of solution-processed multilayer polymer light-emitting diodes using charge blocking layers

NASA Astrophysics Data System (ADS)

Kasparek, Christian; Rörich, Irina; Blom, Paul W. M.; Wetzelaer, Gert-Jan A. H.

2018-01-01

By blending semiconducting polymers with the cross-linkable matrix ethoxylated-(4)-bisphenol-a-dimethacrylate (SR540), an insoluble layer is acquired after UV-illumination. Following this approach, a trilayer polymer light-emitting diode (PLED) consisting of a blend of poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)-benzidine] (poly-TPD) and SR540 as an electron-blocking layer, Super Yellow-Poly(p-phenylene vinylene) (SY-PPV) blended with SR540 as an emissive layer, and poly(9,9-di-n-octylfluorenyl-2,7-diyl) as a hole-blocking layer is fabricated from solution. The trilayer PLED shows a 23% increase in efficiency at low voltage as compared to a single layer SY-PPV PLED. However, at higher voltage, the advantage in current efficiency gradually decreases. A combined experimental and modelling study shows that the increased efficiency is not only due to the elimination of exciton quenching at the electrodes but also due to suppressed nonradiative trap-assisted recombination due to carrier confinement. At high voltages, holes can overcome the hole-blocking barrier, which explains the efficiency roll-off.

HOLEGAGE 1.0 - Strain-Gauge Drilling Analysis Program

NASA Technical Reports Server (NTRS)

Hampton, Roy V.

1992-01-01

Interior stresses inferred from changes in surface strains as hole is drilled. Computes stresses using strain data from each drilled-hole depth layer. Planar stresses computed in three ways: least-squares fit for linear variation with depth, integral method to give incremental stress data for each layer, and/or linear fit to integral data. Written in FORTRAN 77.

Analysis for predicting adiabatic wall temperatures with single hole coolant injection into a low speed crossflow

NASA Astrophysics Data System (ADS)

Wang, C. R.; Papell, S. S.; Graham, R. W.

Assuming the local adiabatic wall temperature equals the local total temperature in a low speed coolant mixing layer, integral conservation equations with and without the boundary layer effects are formulated for the mixing layer downstream of a single coolant injection hole oriented at a 30 degree angle to the crossflow. These equations are solved numerically to determine the center line local adiabatic wall temperature and the effective coolant coverage area. Comparison of the numerical results with an existing film cooling experiment indicates that the present analysis permits a simplified but reasonably accurate prediction of the centerline effectiveness and coolant coverage area downstream of a single hole crossflow streamwise injection at 30 degree inclination angle.

Analysis for predicting adiabatic wall temperatures with single hole coolant injection into a low speed crossflow

NASA Technical Reports Server (NTRS)

Wang, C. R.; Papell, S. S.; Graham, R. W.

1981-01-01

Assuming the local adiabatic wall temperature equals the local total temperature in a low speed coolant mixing layer, integral conservation equations with and without the boundary layer effects are formulated for the mixing layer downstream of a single coolant injection hole oriented at a 30 degree angle to the crossflow. These equations are solved numerically to determine the center line local adiabatic wall temperature and the effective coolant coverage area. Comparison of the numerical results with an existing film cooling experiment indicates that the present analysis permits a simplified but reasonably accurate prediction of the centerline effectiveness and coolant coverage area downstream of a single hole crossflow streamwise injection at 30 degree inclination angle.

Analysis for predicting adiabatic wall temperatures with single hole coolant injection into a low speed crossflow

NASA Astrophysics Data System (ADS)

Wang, C. R.; Papell, S. S.; Graham, R. W.

1981-03-01

Assuming the local adiabatic wall temperature equals the local total temperature in a low speed coolant mixing layer, integral conservation equations with and without the boundary layer effects are formulated for the mixing layer downstream of a single coolant injection hole oriented at a 30 degree angle to the crossflow. These equations are solved numerically to determine the center-line local adiabatic wall temperature and the effective coolant coverage area. Comparison of the numerical results with an existing film cooling experiment indicates that the present analysis permits a simplified but reasonably accurate prediction of the centerline effectiveness and coolant coverage area downstream of a single hole crossflow streamwise injection at 30-deg inclination angle.

Analysis for predicting adiabatic wall temperatures with single hole coolant injection into a low speed crossflow

NASA Technical Reports Server (NTRS)

Wang, C. R.; Papell, S. S.; Graham, R. W.

1981-01-01

Assuming the local adiabatic wall temperature equals the local total temperature in a low speed coolant mixing layer, integral conservation equations with and without the boundary layer effects are formulated for the mixing layer downstream of a single coolant injection hole oriented at a 30 degree angle to the crossflow. These equations are solved numerically to determine the center-line local adiabatic wall temperature and the effective coolant coverage area. Comparison of the numerical results with an existing film cooling experiment indicates that the present analysis permits a simplified but reasonably accurate prediction of the centerline effectiveness and coolant coverage area downstream of a single hole crossflow streamwise injection at 30-deg inclination angle.

Passivated p-type silicon: Hole injection tunable anode material for organic light emission

NASA Astrophysics Data System (ADS)

Zhao, W. Q.; Ran, G. Z.; Xu, W. J.; Qin, G. G.

2008-02-01

We find that hole injection can be enhanced simply by selecting a lower-resistivity p-Si anode to match an electron injection enhancement for organic light emitting diodes with ultrathin-SiO2-layer-passivated p-Si anode (Si-OLED). For a Si-OLED with ordinary AlQ electron transport layer, the optimized resistivity of the p-Si anode is 40Ωcm; for that with n-doped Bphen electron transport layer, it decreases to 5Ωcm. Correspondingly, the maximum power efficiency increases from 0.3to1.9lm /W, even higher than that of an indium tin oxide control device (1.4lm/W). This passivated p-type silicon is a hole injection tunable anode material for OLED.

Improving the performance of doped pi-conjugated polymers for use in organic light-emitting diodes

PubMed

Gross; Muller; Nothofer; Scherf; Neher; Brauchle; Meerholz

2000-06-08

Organic light-emitting diodes (OLEDs) represent a promising technology for large, flexible, lightweight, flat-panel displays. Such devices consist of one or several semiconducting organic layer(s) sandwiched between two electrodes. When an electric field is applied, electrons are injected by the cathode into the lowest unoccupied molecular orbital of the adjacent molecules (simultaneously, holes are injected by the anode into the highest occupied molecular orbital). The two types of carriers migrate towards each other and a fraction of them recombine to form excitons, some of which decay radiatively to the ground state by spontaneous emission. Doped pi-conjugated polymer layers improve the injection of holes in OLED devices; this is thought to result from the more favourable work function of these injection layers compared with the more commonly used layer material (indium tin oxide). Here we demonstrate that by increasing the doping level of such polymers, the barrier to hole injection can be continuously reduced. The use of combinatorial devices allows us to quickly screen for the optimum doping level. We apply this concept in OLED devices with hole-limited electroluminescence (such as polyfluorene-based systems), finding that it is possible to significantly reduce the operating voltage while improving the light output and efficiency.

P-type surface effects for thickness variation of 2um and 4um of n-type layer in GaN LED

NASA Astrophysics Data System (ADS)

Halim, N. S. A. Abdul; Wahid, M. H. A.; Hambali, N. A. M. Ahmad; Rashid, S.; Ramli, M. M.; Shahimin, M. M.

2017-09-01

The internal quantum efficiency of III-Nitrides group, GaN light-emitting diode (LED) has been considerably limited due to the insufficient hole injection and this is caused by the lack of performance p-type doping and low hole mobility. The low hole mobility makes the hole less energetic, thus reduced the performance operation of GaN LED itself. The internal quantum efficiency of GaN-based LED with surface roughness (texture) can be changed by texture size, density, and thickness of GaN film or by the combined effects of surface shape and thickness of GaN film. Besides, due to lack of p-type GaN, attempts to look forward the potential of GaN LED relied on the thickness of n-type layer and surface shape of p-type GaN layer. This work investigates the characteristics of GaN LED with undoped n-GaN layer of different thickness and the surface shape of p-type layer. The LEDs performance is significantly altered by modifying the thickness and shape. Enhancement of n-GaN layer has led to the annihilation of electrical conductivity of the chip. Different surface geometry governs the emission rate extensively. Internal quantum efficiency is also predominantly affected by the geometry of n-GaN layer which subjected to the current spreading. It is recorded that the IQE droop can be minimized by varying the thickness of the active layer without amplifying the forward voltage. Optimum forward voltage (I-V), total emission rate relationship with the injected current and internal quantum efficiency (IQE) for 2,4 µm on four different surfaces of p-type layer are also reported in this paper.

Polyethers with pendent phenylvinyl substituted carbazole rings as polymers for hole transporting layers of OLEDs

NASA Astrophysics Data System (ADS)

Griniene, R.; Liu, L.; Tavgeniene, D.; Sipaviciute, D.; Volyniuk, D.; Grazulevicius, J. V.; Xie, Z.; Zhang, B.; Leduskrasts, K.; Grigalevicius, S.

2016-01-01

Polyethers containing pendent 3-(2-phenylvinyl)carbazole moieties have been synthesized by the multi-step synthetic routes. Full characterization of their structures is presented. The polymers represent materials of high thermal stability with initial thermal degradation temperatures exceeding 370 °C. The glass transition temperatures of the amorphous materials were in the range of 56-658 °C. The electron photoemission spectra of thin layers of the polymers showed ionization potentials of about 5.6 eV. Hole-transporting properties of the polymeric materials were tested in the structures of organic light emitting diodes with Alq3 as the green emitter and electron transporting layer. The device containing hole-transporting layers of poly{9-[6-(3-methyloxetan-3-ylmethoxy)hexyl]-3-(2-phenylvinyl)carbazole} exhibited the best overall performance with a maximum photometric efficiency of about 4.0 cd/A and maximum brightness exceeding 6430 cd/m2.

Coulomb drag in electron-hole bilayer: Mass-asymmetry and exchange correlation effects

NASA Astrophysics Data System (ADS)

Arora, Priya; Singh, Gurvinder; Moudgil, R. K.

2018-04-01

Motivated by a recent experiment by Zheng et al. [App. Phys. Lett. 108, 062102 (2016)] on coulomb drag in electron-hole and hole-hole bilayers based on GaAs/AlGaAs semiconductor heterostructure, we investigate theoretically the influence of mass-asymmetry and temperature-dependence of correlations on the drag rate. The correlation effects are dealt with using the Vignale-Singwi effective inter-layer interaction model which includes correlations through local-field corrections to the bare coulomb interactions. However, in this work, we have incorporated only the intra-layer correlations using the temperature-dependent Hubbard approximation. Our results display a reasonably good agreement with the experimental data. However, it is crucial to include both the electron-hole mass-asymmetry and temperature-dependence of correlations. Mass-asymmetry and correlations are found to result in a substantial enhancement of drag resistivity.

Skin Friction Reduction by Micro-Blowing Technique

NASA Technical Reports Server (NTRS)

Hwang, Danny P. (Inventor)

1998-01-01

A system and method for reducing skin friction of an object in relative motion to a fluid. A skin forming a boundary between the object and the fluid, the skin having holes through which micro-blowing of air is blown and a transmitting mechanism for transmitting air through the skin. The skin has an inner layer and an outer layer. the inner layer being a low permeable porous sheet, the outer layer being a plate having high aspect ratio high porosity. and small holes. The system may further include a suction apparatus for suctioning air from the outer layer. The method includes the steps of transmitting air through the inner layer and passing the air transmitted through the inner layer to the outer layer. The method may further include the step of bleeding air off the outer layer using the suction apparatus.

Nanostructured Electron-Selective Interlayer for Efficient Inverted Organic Solar Cells.

PubMed

Song, Jiyun; Lim, Jaehoon; Lee, Donggu; Thambidurai, M; Kim, Jun Young; Park, Myeongjin; Song, Hyung-Jun; Lee, Seonghoon; Char, Kookheon; Lee, Changhee

2015-08-26

We report a unique nanostructured electron-selective interlayer comprising of In-doped ZnO (ZnO:In) and vertically aligned CdSe tetrapods (TPs) for inverted polymer:fullerene bulkheterojunction (BHJ) solar cells. With dimension-controlled CdSe TPs, the direct inorganic electron transport pathway is provided, resulting in the improvement of the short circuit current and fill factor of devices. We demonstrate that the enhancement is attributed to the roles of CdSe TPs that reduce the recombination losses between the active layer and buffer layer, improve the hole-blocking as well as electron-transporting properties, and simultaneously improve charge collection characteristics. As a result, the power conversion efficiency of PTB7:PC70BM based solar cell with nanostructured CdSe TPs increases to 7.55%. We expect this approach can be extended to a general platform for improving charge extraction in organic solar cells.

Black-hole kicks from numerical-relativity surrogate models

NASA Astrophysics Data System (ADS)

Gerosa, Davide; Hébert, François; Stein, Leo C.

2018-05-01

Binary black holes radiate linear momentum in gravitational waves as they merge. Recoils imparted to the black-hole remnant can reach thousands of km /s , thus ejecting black holes from their host galaxies. We exploit recent advances in gravitational waveform modeling to quickly and reliably extract recoils imparted to generic, precessing, black-hole binaries. Our procedure uses a numerical-relativity surrogate model to obtain the gravitational waveform given a set of binary parameters; then, from this waveform we directly integrate the gravitational-wave linear momentum flux. This entirely bypasses the need for fitting formulas which are typically used to model black-hole recoils in astrophysical contexts. We provide a thorough exploration of the black-hole kick phenomenology in the parameter space, summarizing and extending previous numerical results on the topic. Our extraction procedure is made publicly available as a module for the Python programming language named surrkick. Kick evaluations take ˜0.1 s on a standard off-the-shelf machine, thus making our code ideal to be ported to large-scale astrophysical studies.

Electron and hole transport in ambipolar, thin film pentacene transistors

NASA Astrophysics Data System (ADS)

Saudari, Sangameshwar R.; Kagan, Cherie R.

2015-01-01

Solution-processed, ambipolar, thin-film pentacene field-effect transistors were employed to study both electron and hole transport simultaneously in a single, organic solid-state device. Electron and hole mobilities were extracted from the respective unipolar saturation regimes and show thermally activated behavior and gate voltage dependence. We fit the gate voltage dependent saturation mobility to a power law to extract the characteristic Meyer-Neldel (MN) energy, a measure of the width of the exponential distribution of localized states extending into the energy gap of the organic semiconductor. The MN energy is ˜78 and ˜28 meV for electrons and holes, respectively, which reflects a greater density of localized tail states for electrons than holes. This is consistent with the lower measured electron than hole mobility. For holes, the well-behaved linear regime allows for four-point probe measurement of the contact resistance independent mobility and separate characterization of the width of the localized density of states, yielding a consistent MN energy of 28 meV.

Carbazole/triarylamine based polymers as a hole injection/transport layer in organic light emitting devices.

PubMed

Wang, Hui; Ryu, Jeong-Tak; Kwon, Younghwan

2012-05-01

This study examined the influence of the charge injection barriers on the performance of organic light emitting diodes (OLEDs) using polymers with a stepwise tuned ionization potential (I(p) approximately -5.01 - -5.29 eV) between the indium tin oxide (ITO) (phi approximately -4.8 eV) anode and tris(8-hydroxyquinolinato) aluminium (Alq3) (I(p) approximately -5.7 eV) layer. The energy levels of the polymers were tuned by structural modification. Double layer devices were fabricated with a configuration of ITO/polymer/Alq3/LiF/Al, where the polymers, Alq3, and LiF/Al were used as the hole injection/transport layer, emissive electron transport layer, and electron injection/cathode, respectively. Using the current density-voltage (J-V), luminescence-voltage (L-V) and efficiencies in these double layer devices, the device performance was evaluated in terms of the energy level alignments at the interfaces, such as the hole injection barriers (phi(h)(iTO/polymer) and phi(h)(polymer/Alq3)) from ITO through the polymers into the Alq3 layer, and the electron injection barrier (phi(e)(polymer/Alq3) or electron/exciton blocking barrier) at the polymer/Alq3 interface.

Hot-hole extraction from quantum dot to molecular adsorbate.

PubMed

Singhal, Pallavi; Ghosh, Hirendra N

2015-03-09

Ultrafast thermalized and hot-hole-transfer processes have been investigated in CdSe quantum dot (QD)/catechol composite systems in which hole transfer from photoexcited QDs to the catechols is thermodynamically favorable. A series of catechol derivatives were selected with different electron-donating and -withdrawing groups, and the effect of these groups on hole transfer and charge recombination (CR) dynamics has been investigated. The hole-transfer time was determined using the fluorescence upconversion technique and found to be 2-10 ps depending on the molecular structure of the catechol derivatives. The hot-hole-transfer process was followed after monitoring 2S luminescence of CdSe QDs. Interestingly, hot-hole extraction was observed only in the CdSe/3-methoxycatechol (3-OCH3) composite system owing to the higher electron-donating property of the 3-methoxy group. To confirm the extraction of the hot hole and to monitor the CR reaction in CdSe QD/catechol composite systems, ultrafast transient absorption studies have been carried out. Ultrafast transient-absorption studies show that the bleach recovery kinetics of CdSe QD at the 2S excitonic position is much faster in the presence of 3-OCH3. This faster bleach recovery at the 2S position in CdSe/3-OCH3 suggests hot-hole transfer from CdSe QD to 3-OCH3. CR dynamics in CdSe QD/catechol composite systems was followed by monitoring the excitonic bleach at the 1S position and was found to decrease with free energy of the CR reaction. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

[Influence of MnO3 on Photoelectric Performance in Organic Light Emitting Diodes].

PubMed

Guan, Yun-xia; Chen, Li-jia; Chen, Ping; Fu, Xiao-qiang; Niu, Lian-bin

2016-03-01

Organic Light Emitting Diodes (OLEDs) has been a promising new research point that has received much attention recently. Emission in a conventional OLED originates from the recombination of carriers (electrons and holes) that are injected from external electrodes. In the device, Electrons, on the other hand, are injected from the Al cathode to an electron-transporting layer and travel to the same emissive zone. Holes are injected from the transparent ITO anode to a hole-transporting layer and holes reach an emitting zone through the holetransporting layer. Electrons and holes recombine at the emissive film to formsinglet excited states, followed by emissive light. It is because OLED is basically an optical device and its structure consists of organic or inorganic layers of sub-wavelength thickness with different refractive indices. When the electron and holes are injected through the electrodes, they combine in the emission zone emitting the photons. These photons will have the reflection and transmission at each interface and the interference will determine the intensity profile. The emissive light reflected at the interfaces or the metallic electrode returns to the emissive layer and affects the radiation current efficiency. Microcavity OLED can produce saturated colors and narrow the emission spetrum as a new kind of technique. In the paper, we fabricate microcavity OLED using glass substrate. Ag film acts as the anode reflector mirror; NPB serves as the hole-transporting material; Alq3 is electron-transporting material and organic emissive material; Ag film acts as cathode reflector mirror. The microcavity OLED structures named as A, B, C and D are glass/Ag(15 nm)/MoO3 (x nm)/NPB(50 nm)/Alq3 (60 nm)/A1(100 nm). Here, A, x = 4 nm; B, x = 7 nm; C, x = 10 nm; D, x = 13 nm. The characteristic voltage, brightness and current of these devices are investigated in the electric field. The luminance from the Devices A, B, C and D reaches the luminance of 928, 1 369, 2 550 and 2 035 cd x m(-2), respectively at 13 V. At 60 mA x cm(-2), the current efficiency of the microcavity OLEDs using MnO3 are about 2.2, 2.6, 3.1 and 2.6 cd x A(-2) respectively. It is found that electrons are majority carriers and holes are minority carriers in this microcavity OLEDs. MnO3 film can improve hole injection ability from 4 to 10 nm. In addition, hole injection ability is increased with the increasing thickness of the MnO3 film.

Extraction of Black Hole Shadows Using Ridge Filtering and the Circle Hough Transform

NASA Astrophysics Data System (ADS)

Hennessey, Ryan; Akiyama, Kazunori; Fish, Vincent

2018-01-01

Supermassive black holes are widely considered to reside at the center of most large galaxies. One of the foremost tasks in modern astronomy is to image the centers of local galaxies, such as that of Messier 87 (M87) and Sagittarius A* at the center of our own Milky Way, to gain the first glimpses of black holes and their surrounding structures. Using data obtained from the Event Horizon Telescope (EHT), a global collection of millimeter-wavelength telescopes designed to perform very long baseline interferometry, new imaging techniques will likely be able to yield images of these structures at fine enough resolutions to compare with the predictions of general relativity and give us more insight into the formation of black holes, their surrounding jets and accretion disks, and galaxies themselves. Techniques to extract features from these images are already being developed. In this work, we present a new method for measuring the size of the black hole shadow, a feature that encodes information about the black hole mass and spin, using ridge filtering and the circle Hough transform. Previous methods have succeeded in extracting the black hole shadow with an accuracy of about 10- 20%, but using this new technique we are able to measure the shadow size with even finer accuracy. Our work indicates that the EHT will be able to significantly reduce the uncertainty in the estimate of the mass of the supermassive black hole in M87.

Mechanism of hole injection enhancement in light-emitting diodes by inserting multiple hole-reservoir layers in electron blocking layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Yukun; Wang, Shuai; Feng, Lungang

In this study, gallium nitride (GaN) based light-emitting diodes (LEDs) with single and multiple hole-reservoir layers (HRLs) inserted in the electron-blocking layer (EBL) have been investigated numerically and experimentally. According to simulation results, a better electron confinement and a higher hole injection level can be achieved by the multiple HRLs inserted in the EBL region. To further reveal the underlying mechanism of hole injection enhancement experimentally, the active regions were intentionally designed to emit photons with three different wavelengths of 440 nm, 460 nm, and 480 nm, respectively. Based on the experimental results of photoluminescence (PL) and time-resolved PL (TRPL) measurements conducted atmore » 298 K, the remarkable enhancement (148%) of PL intensities and significant increase in the decay times of the quantum wells close to p-GaN can be obtained. Therefore, the mechanism is proposed that carriers are able to reserve in the EBL region with multiple HRLs for a much longer time. Meanwhile, carriers could diffuse into the active region by tunnelling and/or thermo-electronic effect and then recombine efficiently, leading to the better carrier reservoir effect and higher hole injection in LEDs. As a result, by inserting multiple HRLs in the EBL region instead of single HRL, the experimental external quantum efficiency is enhanced by 19.8%, while the serious droop ratio is markedly suppressed from 37.0% to 27.6% at the high current injection of 100 A/cm{sup 2}.« less

Spinel Co3O4 nanomaterials for efficient and stable large area carbon-based printed perovskite solar cells.

PubMed

Bashir, Amna; Shukla, Sudhanshu; Lew, Jia Haur; Shukla, Shashwat; Bruno, Annalisa; Gupta, Disha; Baikie, Tom; Patidar, Rahul; Akhter, Zareen; Priyadarshi, Anish; Mathews, Nripan; Mhaisalkar, Subodh G

2018-02-01

Carbon based perovskite solar cells (PSCs) are fabricated through easily scalable screen printing techniques, using abundant and cheap carbon to replace the hole transport material (HTM) and the gold electrode further reduces costs, and carbon acts as a moisture repellent that helps in maintaining the stability of the underlying perovskite active layer. An inorganic interlayer of spinel cobaltite oxides (Co 3 O 4 ) can greatly enhance the carbon based PSC performance by suppressing charge recombination and extracting holes efficiently. The main focus of this research work is to investigate the effectiveness of Co 3 O 4 spinel oxide as the hole transporting interlayer for carbon based perovskite solar cells (PSCs). In these types of PSCs, the power conversion efficiency (PCE) is restricted by the charge carrier transport and recombination processes at the carbon-perovskite interface. The spinel Co 3 O 4 nanoparticles are synthesized using the chemical precipitation method, and characterized by X-ray diffraction (XRD), X-ray absorption spectroscopy (XAS), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and UV-Vis spectroscopy. A screen printed thin layer of p-type inorganic spinel Co 3 O 4 in carbon PSCs provides a better-energy level matching, superior efficiency, and stability. Compared to standard carbon PSCs (PCE of 11.25%) an improved PCE of 13.27% with long-term stability, up to 2500 hours under ambient conditions, is achieved. Finally, the fabrication of a monolithic perovskite module is demonstrated, having an active area of 70 cm 2 and showing a power conversion efficiency of >11% with virtually no hysteresis. This indicates that Co 3 O 4 is a promising interlayer for efficient and stable large area carbon PSCs.

Investigations on flexural wave propagation and attenuation in a modified one-dimensional acoustic black hole using a laser excitation technique

NASA Astrophysics Data System (ADS)

Ji, Hongli; Luo, Jing; Qiu, Jinhao; Cheng, Li

2018-05-01

Acoustic Black Holes (ABHs), as a new type of passive structure for vibration damping enhancement and noise attenuation, have been drawing increasing attentions of many researchers. Due to the difficulty in manufacturing the sharp edges required by the ABH structures, it is important to understand the wave propagation and attenuation process in the presence of damping layers in non-ideal ABHs with a truncated edge. In this paper, an analytical expression of the wave reflection coefficient in a modified one-dimensional ABH is derived and a time-domain experimental method based on a laser excitation technique is used to visualize the wave propagation. In the experimental studies, the flexural waves in the ABH were excited by a scanning pulse laser and measured by a Laser Doppler Vibrometer (LDV). The incident wave and reflected wave were separated from the measured original wave field and the decrease of the wave velocity in the ABH was exhibited. The reflection coefficient was calculated from the ratio of the amplitude of the reflected wave to that of the incident wave for different ABH parameters and different thicknesses of the damping layer. The measured reflection coefficients were used to identify the unknown coefficients in the theoretical formula. The results confirm that there exists an optimal thickness for the damping layer, which leads to the minimum wave reflection. Based on the laser-induced visualization technique and various signal processing and feature extraction methods, the entire process of the wave propagation in a non-ideal one-dimensional ABH structure can be visualized and scrutinized.

Improved fill factor in inverted planar perovskite solar cells with zirconium acetate as the hole-and-ion-blocking layer.

PubMed

Zhang, Xuewen; Liang, Chunjun; Sun, Mengjie; Zhang, Huimin; Ji, Chao; Guo, Zebang; Xu, Yajun; Sun, Fulin; Song, Qi; He, Zhiqun

2018-03-14

Planar perovskite solar cells (PSCs) have gained great interest due to their low-temperature solution preparation and simple process. In inverted planar PSCs, an additional buffer layer is usually needed on the top of the PCBM electron-transport layer (ETL) to enhance the device performance. In this work, we used a new buffer layer, zirconium acetate (Zr(Ac) 4 ). The inclusion of the Zr(Ac) 4 buffer layer leads to the increase of FF from ∼68% to ∼79% and PCE from ∼14% to ∼17% in the planar PSCs. The UPS measurement indicates that the Zr(Ac) 4 layer has a low HOMO level of -8.2 eV, indicating that the buffer layer can act as a hole-blocking layer. Surface morphology and surface chemistry investigations reveal that the elements I, MA and Pb can diffuse across the PCBM ETL, damaging the device performance. The covering Zr(Ac) 4 molecules fill in the pinholes of the PCBM layer and effectively block the ions/molecules of the perovskite from diffusion across the ETL. The resulting more robust PCBM/Zr(Ac) 4 ETL leads to weaker ionic charge accumulation and lower diode leakage current. The double role of hole-and-ion blocking of the Zr(Ac) 4 layer explains the improved FF and PCE in the PSCs.

Highly efficient and bendable organic solar cells using a three-dimensional transparent conducting electrode

NASA Astrophysics Data System (ADS)

Wang, Wei; Bae, Tae-Sung; Park, Yeon Hyun; Kim, Dong Ho; Lee, Sunghun; Min, Guanghui; Lee, Gun-Hwan; Song, Myungkwan; Yun, Jungheum

2014-05-01

A three-dimensional (3D) transparent conducting electrode, consisting of a quasi-periodic array of discrete indium-tin-oxide (ITO) nanoparticles superimposed on a highly conducting oxide-metal-oxide multilayer using ITO and silver oxide (AgOx) as oxide and metal layers, respectively, is synthesized on a polymer substrate and used as an anode in highly flexible organic solar cells (OSCs). The 3D electrode is fabricated using vacuum sputtering sequences to achieve self-assembly of distinct ITO nanoparticles on a continuous ITO-AgOx-ITO multilayer at room-temperature without applying conventional high-temperature vapour-liquid-solid growth, solution-based nanoparticle coating, or complicated nanopatterning techniques. Since the 3D electrode enhances the hole-extraction rate in OSCs owing to its high surface area and low effective series resistance for hole transport, OSCs based on this 3D electrode exhibit a power conversion efficiency that is 11-22% higher than that achievable in OSCs by means of conventional planar ITO film-type electrodes. A record high efficiency of 6.74% can be achieved in a bendable OSC fabricated on a poly(ethylene terephthalate) substrate.A three-dimensional (3D) transparent conducting electrode, consisting of a quasi-periodic array of discrete indium-tin-oxide (ITO) nanoparticles superimposed on a highly conducting oxide-metal-oxide multilayer using ITO and silver oxide (AgOx) as oxide and metal layers, respectively, is synthesized on a polymer substrate and used as an anode in highly flexible organic solar cells (OSCs). The 3D electrode is fabricated using vacuum sputtering sequences to achieve self-assembly of distinct ITO nanoparticles on a continuous ITO-AgOx-ITO multilayer at room-temperature without applying conventional high-temperature vapour-liquid-solid growth, solution-based nanoparticle coating, or complicated nanopatterning techniques. Since the 3D electrode enhances the hole-extraction rate in OSCs owing to its high surface area and low effective series resistance for hole transport, OSCs based on this 3D electrode exhibit a power conversion efficiency that is 11-22% higher than that achievable in OSCs by means of conventional planar ITO film-type electrodes. A record high efficiency of 6.74% can be achieved in a bendable OSC fabricated on a poly(ethylene terephthalate) substrate. Electronic supplementary information (ESI) available: FE-SEM images of Ar plasma-treated PET surfaces, curve deconvolution of XPS Ag 3d5/2 spectra, refractive indices and extinction coefficients of the Ag and AgOx (O/Ag = 10 at%), changes in the specular reflections of the IAOI-NPA and IAI-NPA electrodes for different O/Ag atomic ratios and thicknesses of the AgOx layer, and comparisons between the Jsc values determined from simulated AM 1.5G illumination and IPCE spectra. See DOI: 10.1039/c3nr06755f

Flow Coefficient Behavior for Boundary Layer Bleed Holes and Slots

NASA Technical Reports Server (NTRS)

Willis, B. P.; Davis, D. O.; Hingst, W. R.

1995-01-01

An experimental investigation into the flow coefficient behavior for nine boundary layer bleed orifice configurations is reported. This test was conducted for the purposes of exploring boundary layer control through mass flow removal and does not address issues of stability bleed. Parametric data consist of bleed region flow coefficient as a function of Mach number, bleed plenum pressure, and bleed orifice geometry. Seven multiple hole configurations and two single slot configurations were tested over a supersonic Mach number range of 1.3 to 2.5 (nominal). Advantages gained by using multiple holes in a bleed region instead of a single spanwise slot are discussed and the issue of modeling an entire array of bleed orifices based on the performance of a single orifice is addressed. Preconditioning the flow approaching a 90 degree inclined (normal) hole configuration resulted in a significant improvement in the performance of the configuration. The same preconditioning caused only subtle changes in performance for a 20 degree inclined (slanted) configuration.

Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Padilla, J. L., E-mail: jose.padilladelatorre@epfl.ch; Alper, C.; Ionescu, A. M.

2015-06-29

We investigate the effect of pseudo-bilayer configurations at low operating voltages (≤0.5 V) in the heterogate germanium electron-hole bilayer tunnel field-effect transistor (HG-EHBTFET) compared to the traditional bilayer structures of EHBTFETs arising from semiclassical simulations where the inversion layers for electrons and holes featured very symmetric profiles with similar concentration levels at the ON-state. Pseudo-bilayer layouts are attained by inducing a certain asymmetry between the top and the bottom gates so that even though the hole inversion layer is formed at the bottom of the channel, the top gate voltage remains below the required value to trigger the formation of themore » inversion layer for electrons. Resulting benefits from this setup are improved electrostatic control on the channel, enhanced gate-to-gate efficiency, and higher I{sub ON} levels. Furthermore, pseudo-bilayer configurations alleviate the difficulties derived from confining very high opposite carrier concentrations in very thin structures.« less

Creation of nanosized holes in graphene planes for improvement of rate capability of lithium-ion batteries

NASA Astrophysics Data System (ADS)

Bulusheva, L. G.; Stolyarova, S. G.; Chuvilin, A. L.; Shubin, Yu V.; Asanov, I. P.; Sorokin, A. M.; Mel'gunov, M. S.; Zhang, Su; Dong, Yue; Chen, Xiaohong; Song, Huaihe; Okotrub, A. V.

2018-04-01

Holes with an average size of 2-5 nm have been created in graphene layers by heating of graphite oxide (GO) in concentrated sulfuric acid followed by annealing in an argon flow. The hot mineral acid acts simultaneously as a defunctionalizing and etching agent, removing a part of oxygen-containing groups and lattice carbon atoms from the layers. Annealing of the holey reduced GO at 800 °C-1000 °C causes a decrease of the content of residual oxygen and the interlayer spacing thus producing thin compact stacks from holey graphene layers. Electrochemical tests of the obtained materials in half-cells showed that the removal of oxygen and creation of basal holes lowers the capacity loss in the first cycle and facilitates intercalation-deintercalation of lithium ions. This was attributed to minimization of electrolyte decomposition reactions, easier desolvation of lithium ions near the hole boundaries and appearance of multiple entrances for the naked ions into graphene stacks.

Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

NASA Astrophysics Data System (ADS)

Liu, Chao; Ren, Zhi-Wei; Chen, Xin; Zhao, Bi-Jun; Wang, Xing-Fu; Yin, Yi-An; Li, Shu-Ti

2013-05-01

P-InGaN/p-GaN superlattices (SLs) are developed for a hole accumulation layer (HAL) of a blue light emitting diode (LED). Free hole concentration as high as 2.6 × 1018 cm-3 is achieved by adjusting the Cp2Mg flow rate during the growth of p-InGaN/p-GaN SLs. The p-InGaN/p-GaN SLs with appropriate Cp2Mg flow rates are then incorporated between the multi-quantum well and AlGaN electron blocking layer as an HAL, which leads to the enhancement of light output power by 29% at 200 mA, compared with the traditional LED without such SL HAL. Meanwhile, the efficiency droop is also effectively alleviated in the LED with the SL HAL. The improved performance is attributed to the increased hole injection efficiency, and the reduced electron leakage by inserting the p-type SL HAL.

Measurement of Small Molecular Dopant F4TCNQ and C 60F 36 Diffusion in Organic Bilayer Architectures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Jun; Rochester, Chris W.; Jacobs, Ian E.

2015-12-03

The diffusion of molecules through and between organic layers is a serious stability concern in organic electronic devices. In this paper, the temperature-dependent diffusion of molecular dopants through small molecule hole transport layers is observed. Specifically we investigate bilayer stacks of small molecules used for hole transport (MeO-TPD) and p-type dopants (F4TCNQ and C 60F 36) used in hole injection layers for organic light emitting diodes and hole collection electrodes for organic photovoltaics. With the use of absorbance spectroscopy, photoluminescence spectroscopy, neutron reflectometry, and near-edge X-ray absorption fine structure spectroscopy, we are able to obtain a comprehensive picture of themore » diffusion of fluorinated small molecules through MeO-TPD layers. F4TCNQ spontaneously diffuses into the MeO-TPD material even at room temperature, while C 60F 36, a much bulkier molecule, is shown to have a substantially higher morphological stability. Finally, this study highlights that the differences in size/geometry and thermal properties of small molecular dopants can have a significant impact on their diffusion in organic device architectures.« less

Tunable hole injection of solution-processed polymeric carbon nitride towards efficient organic light-emitting diode

NASA Astrophysics Data System (ADS)

Zhang, Xiaowen; Zheng, Qinghong; Tang, Zhenyu; Li, Wanshu; Zhang, Yan; Xu, Kai; Xue, Xiaogang; Xu, Jiwen; Wang, Hua; Wei, Bin

2018-02-01

Polymeric carbon nitride (CNxHy) has been facilely synthesized from dicyandiamide and functions as a solution-processed hole injection layer in organic light-emitting diodes (OLEDs). The measurements using X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and impedance spectroscopy elucidate that CNxHy exhibits superior film morphology and extra electric properties such as tailored work function and tunable hole injection. The luminous efficiency of CNxHy-based OLED is found to improve by 76.6% in comparison to the counterpart using favorite solution-processed poly(ethylene dioxythiophene):poly(styrene sulfonate) as the hole injection layer. Our results also pave a way for broadening carbon nitride applications in organic electronics using the solution process.

Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.

PubMed

Lin, Bing-Chen; Chen, Kuo-Ju; Wang, Chao-Hsun; Chiu, Ching-Hsueh; Lan, Yu-Pin; Lin, Chien-Chung; Lee, Po-Tsung; Shih, Min-Hsiung; Kuo, Yen-Kuang; Kuo, Hao-Chung

2014-01-13

A tapered AlGaN electron blocking layer with step-graded aluminum composition is analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally. The energy band diagrams, electrostatic fields, carrier concentration, electron current density profiles, and hole transmitting probability are investigated. The simulation results demonstrated that such tapered structure can effectively enhance the hole injection efficiency as well as the electron confinement. Consequently, the LED with a tapered EBL grown by metal-organic chemical vapor deposition exhibits reduced efficiency droop behavior of 29% as compared with 44% for original LED, which reflects the improvement in hole injection and electron overflow in our design.

Relative permittivity and Hubbard U of pentacene extracted from scanning tunneling microscopy studies of p-doped films

NASA Astrophysics Data System (ADS)

Ha, Sieu D.; Qi, Yabing; Kahn, Antoine

2010-08-01

Temperature-dependent I- V measurements determine that pentacene is effectively p-doped by tetrafluoro-tetracyanoquinodimethane (F 4-TCNQ). It has been shown by scanning tunneling microscopy (STM) that the donated hole is localized by the ionized dopant counter potential, and that the hole can be visualized [4]. Here, it is argued that the effect of the localized hole on STM images should depend on distance as 1/ ɛr, as per the Coulomb potential. By fitting line profiles of localized hole features to the Coulomb potential, it is shown that approximate values for the relative permittivity and Hubbard U of pentacene can be extracted.

Quantum confinement effects on electronic photomobilities at nanostructured semiconductor surfaces: Si(111) without and with adsorbed Ag clusters

NASA Astrophysics Data System (ADS)

Hembree, Robert H.; Vazhappilly, Tijo; Micha, David A.

2017-12-01

The conductivity of holes and electrons photoexcited in Si slabs is affected by the slab thickness and by adsorbates. The mobilities of those charged carriers depend on how many layers compose the slab, and this has important scientific and technical consequences for the understanding of photovoltaic materials. A previously developed general computational procedure combining density matrix and electronic band structure treatments has been applied to extensive calculations of mobilities of photoexcited electrons and holes at Si(111) nanostructured surfaces with varying slab thickness and for varying photon energies, to investigate the expected change in mobility magnitudes as the slab thickness is increased. Results have been obtained with and without adsorbed silver clusters for comparison of their optical and photovoltaic properties. Band states were generated using a modified ab initio density functional treatment with the PBE exchange and correlation density functionals and with periodic boundary conditions for large atomic supercells. An energy gap correction was applied to the unoccupied orbital energies of each band structure by running more accurate HSE hybrid functional calculations for a Si(111) slab. Photoexcited state populations for slabs with 6, 8, 10, and 12 layers were generated using a steady state reduced density matrix including dissipative effects due to energy exchange with excitons and phonons in the medium. Mobilities have been calculated from the derivatives of voltage-driven electronic energies with respect to electronic momentum, for each energy band and for the average over bands. Results show two clear trends: (a) adding Ag increases the hole photomobilities and (b) decreasing the slab thickness increases hole photomobilities. The increased hole populations in 6- and 8-layer systems and the large increase in hole mobility for these thinner slabs can be interpreted as a quantum confinement effect of hole orbitals. As the slab thickness increases to ten and twelve layers, the effect of silver adsorbates decreases leading to smaller relative enhancements to the conduction electron and hole mobilities, but the addition of the silver nanoclusters still increases the absorbance of light and the mobility of holes compared to their mobilities in the pure Si slabs.

Large-scale fabrication of vertically aligned ZnO nanowire arrays

DOEpatents

Wang, Zhong L; Das, Suman; Xu, Sheng; Yuan, Dajun; Guo, Rui; Wei, Yaguang; Wu, Wenzhuo

2013-02-05

In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes.

Mass-energy and momentum extraction by gravitational wave emission in the merger of two colliding black holes: The non-head-on case

NASA Astrophysics Data System (ADS)

Aranha, R. F.; Soares, I. Damião; Tonini, E. V.

2012-01-01

We examine numerically the post-merger regime of two nonspining holes in non-head-on collisions in the realm of nonaxisymmetric Robinson-Trautman spacetimes. Characteristic initial data for the system are constructed and evolved via the Robinson-Trautman equation. The numerical integration is performed using a Galerkin spectral method which is sufficiently stable to reach the final configuration of the remnant black hole, when the gravitational wave emission ceases. The initial data contains three independent parameters, the ratio mass α of the individual colliding black holes, their initial premerger infalling velocity and the incidence angle of collision ρ0. The remnant black hole is characterized by its final boost parameter, rest mass and scattering angle. The motion of the remnant black hole is restricted to the plane determined by the directions of the two initial colliding black holes, characterizing a planar collision. The net momentum fluxes carried out by gravitational waves are confined to this plane. We evaluate the efficiency of mass-energy extraction, the total energy and momentum carried out by gravitational waves and the momentum distribution of the remnant black hole for a large domain of initial data parameters. Our analysis is based on the Bondi-Sachs four-momentum conservation laws. The process of mass-energy extraction is shown to be less efficient as the initial data departs from the head-on configuration. Head-on collisions (ρ0=0o) and orthogonal collisions (ρ0=90°) constitute, respectively, upper and lower bounds to the power emission and to the efficiency of mass-energy extraction. On the contrary, head-on collisions and orthogonal collisions constitute, respectively, lower and upper bounds for the momentum of the remnant. Distinct regimes of gravitational wave emission (bursts or quiescent emission) are characterized by the analysis of the time behavior of the gravitational wave power as a function of α. In particular, the net gravitational wave flux is nonzero for equal-mass colliding black holes in non-head-on collisions. The momentum extraction and the patterns of the momentum fluxes, as a function of the incidence angle, are examined. The relation between the incidence angle and the scattering angle closely approximates a relation for the inelastic collision of classical particles in Newtonian dynamics.

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morrison, C., E-mail: c.morrison.2@warwick.ac.uk; Casteleiro, C.; Leadley, D. R.

The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour,more » analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.« less

Superradiance in the BTZ black hole with Robin boundary conditions

NASA Astrophysics Data System (ADS)

Dappiaggi, Claudio; Ferreira, Hugo R. C.; Herdeiro, Carlos A. R.

2018-03-01

We show the existence of superradiant modes of massive scalar fields propagating in BTZ black holes when certain Robin boundary conditions, which never include the commonly considered Dirichlet boundary conditions, are imposed at spatial infinity. These superradiant modes are defined as those solutions whose energy flux across the horizon is towards the exterior region. Differently from rotating, asymptotically flat black holes, we obtain that not all modes which grow up exponentially in time are superradiant; for some of these, the growth is sourced by a bulk instability of AdS3, triggered by the scalar field with Robin boundary conditions, rather than by energy extraction from the BTZ black hole. Thus, this setup provides an example wherein Bosonic modes with low frequency are pumping energy into, rather than extracting energy from, a rotating black hole.

Hole at Telegraph Peak Drilled by Mars Rover Curiosity

NASA Image and Video Library

2015-02-25

This hole, with a diameter slightly smaller than a U.S. dime, was drilled by NASA Curiosity Mars rover into a rock target called Telegraph Peak. The rock is located within the basal layer of Mount Sharp. The hole was drilled on Feb. 24, 2015.

Optoelectronic engineering of colloidal quantum-dot solar cells beyond the efficiency black hole: a modeling approach

NASA Astrophysics Data System (ADS)

Mahpeykar, Seyed Milad; Wang, Xihua

2017-02-01

Colloidal quantum dot (CQD) solar cells have been under the spotlight in recent years mainly due to their potential for low-cost solution-processed fabrication and efficient light harvesting through multiple exciton generation (MEG) and tunable absorption spectrum via the quantum size effect. Despite the impressive advances achieved in charge carrier mobility of quantum dot solids and the cells' light trapping capabilities, the recent progress in CQD solar cell efficiencies has been slow, leaving them behind other competing solar cell technologies. In this work, using comprehensive optoelectronic modeling and simulation, we demonstrate the presence of a strong efficiency loss mechanism, here called the "efficiency black hole", that can significantly hold back the improvements achieved by any efficiency enhancement strategy. We prove that this efficiency black hole is the result of sole focus on enhancement of either light absorption or charge extraction capabilities of CQD solar cells. This means that for a given thickness of CQD layer, improvements accomplished exclusively in optic or electronic aspect of CQD solar cells do not necessarily translate into tangible enhancement in their efficiency. The results suggest that in order for CQD solar cells to come out of the mentioned black hole, incorporation of an effective light trapping strategy and a high quality CQD film at the same time is an essential necessity. Using the developed optoelectronic model, the requirements for this incorporation approach and the expected efficiencies after its implementation are predicted as a roadmap for CQD solar cell research community.

Radiation hard blocked tunneling band {GaAs}/{AlGaAs} superlattice long wavelength infrared detectors

NASA Astrophysics Data System (ADS)

Wu, C. S.; Wen, C. P.; Reiner, P.; Tu, C. W.; Hou, H. Q.

1996-09-01

We have developed a novel multiple quantum well (MQW) long wavelength infrared (LWIR) detector which can operate in a photovoltaic detection mode with an intrinsic event discrimination (IED) capability. The detector was constructed using the {GaAs}/{AlGaAs} MQW technology to form a blocked tunneling band superlattice structure with a 10.2 micron wavelength and 2.2 micron bandwidth. The detector exhibited Schottky junction and photovoltaic detection characteristics with extremely low dark current and low noise as a result of a built-in tunneling current blocking layer structure. In order to enhance quantum efficiency, a built-in electric field was created by grading the doping concentration of each quantum well in the MQW region. The peak responsivity of the detector was 0.4 amps/W with a measured detectivity of 6.0 × 10 11 Jones. The external quantum efficiency was measured to be 4.4%. The detector demonstrated an excellent intrinsic event discrimination capability due to the presence of a p-type GaAs hole collector layer, which was grown on top of the n-type electron emitter region of the MQW detector. The best results show that an infrared signal which is as much as 100 times smaller than coincident nuclear radiation induced current can be distinguished and extracted from the noise signal. With this hole collector structure, our detector also demonstrated two-color detection.

Influence of SiO2 shell thickness on power conversion efficiency in plasmonic polymer solar cells with Au nanorod@SiO2 core-shell structures

PubMed Central

Zhang, Ran; Zhou, Yongfang; Peng, Ling; Li, Xue; Chen, Shufen; Feng, Xiaomiao; Guan, Yuqiao; Huang, Wei

2016-01-01

Locating core-shell metal nanoparticles into a photoactive layer or at the interface of photoactive layer/hole extraction layer is beneficial for fully employing surface plasmon energy, thus enhancing power conversion efficiency (PCE) in plasmonic organic photovoltaic devices (OPVs). Herein, we first investigated the influence of silica shell thickness in Au nanorods (NRs)@SiO2 core-shell structures on OPV performances by inserting them into poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) and thieno[3,4-b]thiophene/benzodithiophene (PTB7) interface, and amazedly found that a 2–3 nm silica shell onto Au NRs induces a highest short-circuit current density of 21.2 mA cm−2 and PCE of 9.55%. This is primarily due to an extremely strong local field and a much slower attenuation of localized surface plasmon resonance around ultrathin silica-coated Au NRs, with which the field intensity remains a high value in the active layer, thus sufficiently improves the absorption of PTB7. Our work provides a clear design concept on precise control of the shell of metal nanoparticles to realize high performances in plasmonic OPVs. PMID:27125309

Influence of SiO2 shell thickness on power conversion efficiency in plasmonic polymer solar cells with Au nanorod@SiO2 core-shell structures.

PubMed

Zhang, Ran; Zhou, Yongfang; Peng, Ling; Li, Xue; Chen, Shufen; Feng, Xiaomiao; Guan, Yuqiao; Huang, Wei

2016-04-29

Locating core-shell metal nanoparticles into a photoactive layer or at the interface of photoactive layer/hole extraction layer is beneficial for fully employing surface plasmon energy, thus enhancing power conversion efficiency (PCE) in plasmonic organic photovoltaic devices (OPVs). Herein, we first investigated the influence of silica shell thickness in Au nanorods (NRs)@SiO2 core-shell structures on OPV performances by inserting them into poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) and thieno[3,4-b]thiophene/benzodithiophene (PTB7) interface, and amazedly found that a 2-3 nm silica shell onto Au NRs induces a highest short-circuit current density of 21.2 mA cm(-2) and PCE of 9.55%. This is primarily due to an extremely strong local field and a much slower attenuation of localized surface plasmon resonance around ultrathin silica-coated Au NRs, with which the field intensity remains a high value in the active layer, thus sufficiently improves the absorption of PTB7. Our work provides a clear design concept on precise control of the shell of metal nanoparticles to realize high performances in plasmonic OPVs.

Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brendel, Moritz, E-mail: moritz.brendel@fbh-berlin.de; Helbling, Markus; Knigge, Andrea

2015-12-28

A comprehensive study on top- and bottom-illuminated Al{sub 0.5}Ga{sub 0.5}N/AlN metal-semiconductor-metal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50 V reaching about 50% for 0.1 μm and 67% for 0.5 μm thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observedmore » threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al{sub 0.5}Ga{sub 0.5}N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers.« less

The taming of the screw: Or how I learned to stop worrying and love elliptic functions

NASA Astrophysics Data System (ADS)

Matsumoto, Elisabetta A.

2011-12-01

Nonlinear elastic phenomena appear time and again in the world around us. This work considers two separate soft matter systems, instabilities in an elastic membrane perforated by a lattice of circular holes and defect textures in smectic liquid crystals. By studying the set of singularities characterizing each system, not only do the analytics become tractable, we gain intuition and insight into complex structures. Under hydrostatic compression, the holes decorating an elastic sheet undergo a buckling instability and collapse. By modeling each of the buckled holes as a pair of dislocation singularities, linear elasticity theory accurately captures the interactions between holes and predicts the pattern transformation they undergo. The diamond plate pattern generated by a square lattice of holes achieves long ranged order due to the broken symmetry of the underlying lattice. The limited number of two dimensional lattices restricts the classes of patterns that can be produced by a at sheet. By changing the topology of the membrane to a cylinder the types of accessible patterns vastly increases, from a chiral wrapped cylinder to pairs of holes alternating orientations to even more complex structures. Equally spaced layered smectics introduce a plethora of geometric constraints yielding novel textures based upon topological defects. The frustration due to the incompatibility of molecular chirality and layers drives the formation of both the venerable twist-grain-boundary phase and the newly discovered helical nanofilament (HN) phase. The HN phase is a newly found solution of the chiral Landau-de Gennes free energy. Finally, we consider two limiting cases of the achiral Landau-de Gennes free energy, bending energy dominated allows defects in the layers and compression energy dominated enforces equally spaced layers. In order to minimize bending energy, smectic layers assume the morphology of minimal surfaces. Riemann's minimal surface is composed of a nonlinear sum of two oppositely handed screw dislocations and has the morphology of a pore. Likewise, focal conic domains result from enforcing the equal spacing condition. We develop an approach to the study of focal sets in smectics which exploits a hidden Poincare symmetry revealed only by viewing the smectic layers as projections from one-higher dimension.

Conformal Field Theory and black hole physics

NASA Astrophysics Data System (ADS)

Sidhu, Steve

2012-01-01

This thesis reviews the use of 2-dimensional conformal field theory applied to gravity, specifically calculating Bekenstein-Hawking entropy of black holes in (2+1) dimensions. A brief review of general relativity, Conformal Field Theory, energy extraction from black holes, and black hole thermodynamics will be given. The Cardy formula, which calculates the entropy of a black hole from the AdS/CFT duality, will be shown to calculate the correct Bekenstein-Hawking entropy of the static and rotating BTZ black holes. The first law of black hole thermodynamics of the static, rotating, and charged-rotating BTZ black holes will be verified.

Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers

NASA Astrophysics Data System (ADS)

Yastrubchak, O.; Sadowski, J.; Gluba, L.; Domagala, J. Z.; Rawski, M.; Żuk, J.; Kulik, M.; Andrearczyk, T.; Wosinski, T.

2014-08-01

Impact of Bi incorporation into (Ga,Mn)As layers on their electronic- and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and magnetic properties by controlling the alloy composition.

Characterization of Blistering and Delamination in Depleted Uranium Hohlraums

DOE Office of Scientific and Technical Information (OSTI.GOV)

Biobaum, K. J. M.

2013-03-01

Blistering and delamination are the primary failure mechanisms during the processing of depleted uranium (DU) hohlraums. These hohlraums consist of a sputter-deposited DU layer sandwiched between two sputter-deposited layers of gold; a final thick gold layer is electrodeposited on the exterior. The hohlraum is deposited on a copper-coated aluminum mandrel; the Al and Cu are removed with chemical etching after the gold and DU layers are deposited. After the mandrel is removed, blistering and delamination are observed on the interiors of some hohlraums, particularly at the radius region. It is hypothesized that blisters are caused by pinholes in the coppermore » and gold layers; etchant leaking through these holes reaches the DU layer and causes it to oxidize, resulting in a blister. Depending on the residual stress in the deposited layers, blistering can initiate larger-scale delamination at layer interfaces. Scanning electron microscopy indicates that inhomogeneities in the machined aluminum mandrel are replicated in the sputter-deposited copper layer. Furthermore, the Cu layer exhibits columnar growth with pinholes that likely allow etchant to come in contact with the gold layer. Any inhomogeneities or pinholes in this initial gold layer then become nucleation sites for blistering. Using a focused ion beam system to etch through the gold layer and extract a cross-sectional sample for transmission electron microscopy, amorphous, intermixed layers at the gold/DU interfaces are observed. Nanometer-sized bubbles in the sputtered and electrodeposited gold layers are also present. Characterization of the morphology and composition of the deposited layers is the first step in determining modifications to processing parameters, with the goal of attaining a significant improvement in hohlraum yield.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saudari, Sangameshwar R.; Kagan, Cherie R.; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104

Solution-processed, ambipolar, thin-film pentacene field-effect transistors were employed to study both electron and hole transport simultaneously in a single, organic solid-state device. Electron and hole mobilities were extracted from the respective unipolar saturation regimes and show thermally activated behavior and gate voltage dependence. We fit the gate voltage dependent saturation mobility to a power law to extract the characteristic Meyer-Neldel (MN) energy, a measure of the width of the exponential distribution of localized states extending into the energy gap of the organic semiconductor. The MN energy is ∼78 and ∼28 meV for electrons and holes, respectively, which reflects a greater densitymore » of localized tail states for electrons than holes. This is consistent with the lower measured electron than hole mobility. For holes, the well-behaved linear regime allows for four-point probe measurement of the contact resistance independent mobility and separate characterization of the width of the localized density of states, yielding a consistent MN energy of 28 meV.« less

Analysis of charge injection and contact resistance as a function of electrode surface treatment in ambipolar polymer transistors

NASA Astrophysics Data System (ADS)

Lee, Seon Jeng; Kim, Chaewon; Jung, Seok-Heon; Di Pietro, Riccardo; Lee, Jin-Kyun; Kim, Jiyoung; Kim, Miso; Lee, Mi Jung

2018-01-01

Ambipolar organic field-effect transistors (OFETs) have both of hole and electron enhancements in charge transport. The characteristics of conjugated diketopyrrolopyrrole ambipolar OFETs depend on the metal-contact surface treatment for charge injection. To investigate the charge-injection characteristics of ambipolar transistors, these devices are processed via various types of self-assembled monolayer treatments and annealing. We conclude that treatment by the self-assembled monolayer 1-decanethiol gives the best enhancement of electron charge injection at both 100 and 300 °C annealing temperature. In addition, the contact resistance is calculated by using two methods: One is the gated four-point probe (gFPP) method that gives the voltage drop between channels, and the other is the simultaneous contact resistance extraction method, which extracts the contact resistance from the general transfer curve. We confirm that the gFPP method and the simultaneous extraction method give similar contact resistance, which means that we can extract contact resistance from the general transfer curve without any special contact pattern. Based on these characteristics of ambipolar p- and n-type transistors, we fabricate inverter devices with only one active layer. [Figure not available: see fulltext.

PIV measurements in the near wakes of hollow cylinders with holes

NASA Astrophysics Data System (ADS)

Firat, Erhan; Ozkan, Gokturk M.; Akilli, Huseyin

2017-05-01

The wake flows behind fixed, hollow, rigid circular cylinders with two rows of holes connecting the front and rear stagnation lines were investigated using particle image velocimetry (PIV) for various combinations of three hole diameters, d = 0.1 D, 0.15 D, and 0.20 D, six hole-to-hole distances, l = 2 d, 3 d, 4 d, 5 d, 6 d, and 7 d, and ten angles of incidence ( α), from 0° to 45° in steps of 5°, at a Reynolds number of Re = 6,900. Time-averaged velocity distributions, instantaneous and time-averaged vorticity patterns, time-averaged streamline topology, and hot spots of turbulent kinetic energy occurred through the interaction of shear layers from the models were presented to show how the wake flow was modified by the presence of the self-issuing jets with various momentums emanating from the downstream holes. In general, as hole diameter which is directly related to jet momentum increased, the values of time-averaged wake characteristics (length of time-averaged recirculation region, vortex formation length, length of shear layers, and gap between the shear layers) increased. Irrespective to d and l tested, the values of the vortex formation length of the models are greater than that of the cylinder without hole (reference model). That is, vortex formation process was shifted downstream by aid of jets. It was found that time-averaged wake characteristics were very sensitive to α. As α increased, the variation of these characteristics can be modeled by exponential decay functions. The effect of l on the three-dimensional vortex shedding patterns in the near wake of the models was also discussed.

Ion extraction from a plasma

NASA Technical Reports Server (NTRS)

Aston, G.; Wilbur, P. J.

1981-01-01

The physical processes governing ion extraction from a plasma have been examined experimentally. The screen hole plasma sheath (the transition region wherein significant ion acceleration and complete electron retardation occurs) has been defined by equipotential plots for a variety of ion accelerator system geometries and operating conditions. It was found that the screen hole plasma sheath extends over a large distance, and influences ion and electron trajectories at least 15 Debye lengths within the discharge chamber. The electron density variation within the screen hole plasma sheath satisfied a Maxwell-Boltzmann density distribution at an effective electron temperature dependent on the discharge plasma primary-to-Maxwellian electron density ratio. Plasma ion flow up to and through the sheath was predominantly one-dimensional, and the ions entered the sheath region with a modified Bohm velocity. Low values of the screen grid thickness to screen hole diameter ratio were found to give good ion focusing and high extracted ion currents because of the effect of screen webbing on ion focusing.

Tunable photoelectric response in NiO-based heterostructures by various orientations

NASA Astrophysics Data System (ADS)

Luo, Yidong; Qiao, Lina; Zhang, Qinghua; Xu, Haomin; Shen, Yang; Lin, Yuanhua; Nan, Cewen

2018-02-01

We engineered various orientations of NiO layers for NiO-based heterostructures (NiO/Au/STO) to investigate their effects on the generation of hot electrons and holes. Our calculation and experimental results suggested that bandgap engineering and the orientation of the hole transport layer (NiO) were crucial elements for the optimization of photoelectric responses. The (100)-orientated NiO/Au/STO achieved the highest photo-current density (˜30 μA/cm2) compared with (111) and (110)-orientated NiO films, which was attributed to the (100) films's lowest effective mass of photogenerated holes (˜1.82 m0) and the highest efficiency of separating and transferring electron-holes of the (100)-orientated sample. Our results opened a direction to design a high efficiency photoelectric solar cell.

Streakline flow visualization of discrete hole film cooling with holes inclined 30 deg to surface

NASA Technical Reports Server (NTRS)

Colladay, R. S.; Russell, L. M.; Lane, J. M.

1976-01-01

Film injection from three rows of discrete holes angled 30 deg to the surface in line with mainstream flow and spaced 5 diameters apart in a staggered array was visualized by using helium bubbles as tracer particles. Both the main stream and the film injectant were ambient air. Detailed streaklines showing the turbulent motion of the film mixing with the main stream were obtained by photographing small, neutrally buoyant helium-filled soap bubbles which followed the flow field. The ratio of boundary layer thickness to hole diameter and the Reynolds number were typical of gas turbine film cooling applications. The results showed the behavior of the film and its interaction with the main stream for a range of blowing rates and two initial boundary layer thicknesses.

Simulation of polarization-dependent film with subwavelength nano-hole array

NASA Astrophysics Data System (ADS)

Yu, Yue; Wei, Dong; Long, Huabao; Xin, Zhaowei; Zhang, Xinyu; Wang, Haiwei; Xie, Changsheng

2018-02-01

When lightwave passes through a metal thin film with a periodic subwavelength hole arrays structure, its transmittance is significantly improved in the partial band compared to other wavelength. Changing the size of the hole, the period or metal material, will make the transmission curve different. Here, we add a layer of dielectric material on the surface of the metal film, such as liquid crystal(LC), by controlling voltage on LC to change the refractive index of this layer, then we can change the transmission curve, and achieve using voltage to move the transmission curve. When there is need for polarization, the holes can be made of a rectangle whose length and width are different or other shapes, for different polarization state of the light, and the film will display different transmission characteristics.

Design rules for vertical interconnections by reverse offset printing

NASA Astrophysics Data System (ADS)

Kusaka, Yasuyuki; Kanazawa, Shusuke; Ushijima, Hirobumi

2018-03-01

Formation of vertical interconnections by reverse offset printing was investigated, particularly focusing on the transfer step, in which an ink pattern is transferred from a polydimethylsiloxane (PDMS) sheet for the step coverage of contact holes. We systematically examined the coverage of contact holes made of a tapered photoresist layer by varying the hole size, the hole depth, PDMS elasticity, PDMS thickness, printing speed, and printing indentation depth. Successful ink filling was achieved when the PDMS was softer, and the optimal PDMS thickness varied depending on the size of the contact holes. This behaviour is related to the bell-type uplift deformation of incompressible PDMS, which can be described by contact mechanics numerical simulations. Based on direct observation of PDMS/resist-hole contact behaviour, the step coverage of contact holes typically involves two steps of contact area growth: (i) the PDMS first touches the bottom of the holes and then (ii) the contact area gradually and radially widens toward the tapered sidewall. From an engineering perspective, it is pointed out that mechanical synchronisation mismatch in the roll-to-sheet type printing invokes the cracking of ink layers at the edges of contact holes. According to the above design rule, ink filling into a contact hole with thickness of 2.5 µm and radius of 10 µm was achieved. Contact chain patterns with 1386 points of vertical interconnections with the square hole size of up to 10 µm successfully demonstrated the validity of the technique presented herein.

Multiple-layer printed-wiring trace connector

NASA Technical Reports Server (NTRS)

Pizzeck, D. E.

1977-01-01

Nickel-plated spring-steel foil connector is hollow pin, with lengthwise slit, that is inserted into improperly plated-through holes. Edges of connector make positive contact with copper pads within hole.

Opto-electro-modulated transient photovoltage and photocurrent system for investigation of charge transport and recombination in solar cells.

PubMed

Shi, Jiangjian; Li, Dongmei; Luo, Yanhong; Wu, Huijue; Meng, Qingbo

2016-12-01

An opto-electro-modulated transient photovoltage/photocurrent system has been developed to probe microscopic charge processes of a solar cell in its adjustable operating conditions. The reliability of this system is carefully determined by electric circuit simulations and experimental measurements. Using this system, the charge transport, recombination and storage properties of a conventional multicrystalline silicon solar cell under different steady-state bias voltages, and light illumination intensities are investigated. This system has also been applied to study the influence of the hole transport material layer on charge extraction and the microscopic charge processes behind the widely considered photoelectric hysteresis in perovskite solar cells.

Shell effect on the electron and hole reorganization energy of core-shell II-VI nanoclusters

NASA Astrophysics Data System (ADS)

Cui, Xianhui; Wang, Xinqin; Yang, Fang; Cui, Yingqi; Yang, Mingli

2017-09-01

Density functional theory calculations were performed to study the effect of shell encapsulation on the geometrical and electronic properties of pure and hybrid core-shell CdSe nanoclusters. The CdSe cores are distorted by the shells, and the shells exhibit distinct surface activity from the cores, which leads to remarkable changes in their electron transition behaviors. Although the electron and hole reorganization energies, which are related to the formation and recombination of electron-hole pairs, vary in a complicated way, their itemized contributions, potentials of electron extraction, ionization and affinity, and hole extraction (HEP), are dependent on the cluster size, shell composition and/or solvent. Our calculations suggest that the behaviors of charge carriers, free electrons and holes, in the semiconductor core-shell nanoclusters can be modulated by selecting appropriate cluster size and controlling the chemical composition of the shells.

Spectral observations of hole injection with transition metal oxides for an efficient organic light-emitting diode

NASA Astrophysics Data System (ADS)

Chiu, Tien-Lung; Chuang, Ya-Ting

2015-02-01

Transition metal oxides, such as molybdenum trioxide (MoO3), tungsten trioxide (WO3) and vanadium pent-oxide (V2O5), are well-known hole injection materials used for organic electronic devices. These materials promote work functions of anodes, reduce energy barriers, and facilitate hole transport at the interface between the inorganic anode and organic hole-transporting layer (HTL). In this study, we characterized the transmittance spectra and work function of these materials. Furthermore, we employed a hole-injection layer (HIL) in a blue phosphorescent organic light-emitting diode (OLED) to evaluate their hole-injection capacity by detecting the variation in the emission spectra. Thus, we utilized an OLED structure that has fast electron transporting dynamics to establish the recombination zone located at emitting layer and a partial HTL close to the anode. We used these three transition metal oxides individually as HILs sandwiched between the ITO anode and HTL and concluded that the strength of emissive light from the HTL was determined by their hole-injection capacity, depending on work function. The small amount of HTL emission light of the V2O5 OLED was explained by the high work function of 5.8 eV for the V2O5 film. However, the V2O5 OLED demonstrated the least favorable optoelectrical performance because of its low transmittance and high resistance of the V2O5 film. Ultimately, the 5 nm-MoO3 OLED exhibited the highest device performance because of its high material conductivity and transparency in the visible band.

Transfer-printing of active layers to achieve high quality interfaces in sequentially deposited multilayer inverted polymer solar cells fabricated in air

PubMed Central

Vohra, Varun; Anzai, Takuya; Inaba, Shusei; Porzio, William; Barba, Luisa

2016-01-01

Abstract Polymer solar cells (PSCs) are greatly influenced by both the vertical concentration gradient in the active layer and the quality of the various interfaces. To achieve vertical concentration gradients in inverted PSCs, a sequential deposition approach is necessary. However, a direct approach to sequential deposition by spin-coating results in partial dissolution of the underlying layers which decreases the control over the process and results in not well-defined interfaces. Here, we demonstrate that by using a transfer-printing process based on polydimethylsiloxane (PDMS) stamps we can obtain increased control over the thickness of the various layers while at the same time increasing the quality of the interfaces and the overall concentration gradient within the active layer of PSCs prepared in air. To optimize the process and understand the influence of various interlayers, our approach is based on surface free energy, spreading parameters and work of adhesion calculations. The key parameter presented here is the insertion of high quality hole transporting and electron transporting layers, respectively above and underneath the active layer of the inverted structure PSC which not only facilitates the transfer process but also induces the adequate vertical concentration gradient in the device to facilitate charge extraction. The resulting non-encapsulated devices (active layer prepared in air) demonstrate over 40% increase in power conversion efficiency with respect to the reference spin-coated inverted PSCs. PMID:27877901

Analgesic, neuropharmacological, anti-diarrheal, and cytotoxic activities of the extract of Solanum sisymbriifolium (Lam.) leaves.

PubMed

Apu, Apurba Sarker; Bhuyan, Shakhawat Hossan; Matin, Maima; Hossain, Faruq; Khatun, Farjana; Taiab, Abu; Jamaluddin

2013-01-01

The present study was undertaken to evaluate the possible analgesic, neuropharmacological, anti-diarrheal, and cytotoxic activities of the ethanol extract of leaves of Solanum sisymbriifolium Lam. (Family: Solanaceae). The analgesic activity was measured by acetic acid-induced writhing inhibition test. The neuropharmacological activities were evaluated using hole cross, hole board, and elevated plus-maze test and the anti-diarrheal activity was assessed using castor oil-induced diarrhea inhibition method. Brine shrimp lethality bioassay was carried out for assessing the cytotoxicity of the ethanol extract of the leaves. Except cytotoxic activity, all the tests were conducted on mice. The extract at oral doses of 200 and 400 mg/kg body weight showed highly significant (p<0.001) decrease in number of writhing, 52.1±0.66 and 4.4±0.64 compared with the control (78.6±0.29) with the percentage of inhibitions of writhing response were found to be 33.72% and 94.40%, respectively. Compare with the control, the extract at both doses showed significant sedative effect in hole cross test. In hole board test, the extract exhibited highly significant (p<0.001) anxiolytic activity at dose of (200 mg/kg), while the same activity was observed at dose of 400 mg/kg in elevated plus-maze test. The extract showed highly significant (p<0.001) anti-diarrheal activity in a dose-dependent manner. With the extract, significant lethality to brine shrimp was found with LC50 value of 61.66±0.9 μg/ml, which was comparable with the positive control (LC50: 11.89±0.8 µg/ml). The results from the present studies support the traditional uses of this plant part and could form the basis of further investigation including compound isolation.

Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Wei, E-mail: wwei99@jlu.edu.cn; Han, Jinhua; Ying, Jun

2014-09-22

Two types of floating-gate based organic thin-film transistor nonvolatile memories (FG-OTFT-NVMs) were demonstrated, with poly(methyl methacrylate co glycidyl methacrylate) (P(MMA-GMA)) and tetratetracontane (TTC) as the tunneling layer, respectively. Their device performances were measured and compared. In the memory with a P(MMA-GMA) tunneling layer, typical unipolar hole transport was obtained with a relatively small mobility of 0.16 cm{sup 2}/V s. The unidirectional shift of turn-on voltage (V{sub on}) due to only holes trapped/detrapped in/from the floating gate resulted in a small memory window of 12.5 V at programming/erasing voltages (V{sub P}/V{sub E}) of ±100 V and a nonzero reading voltage. Benefited from the well-ordered moleculemore » orientation and the trap-free surface of TTC layer, a considerably high hole mobility of 1.7 cm{sup 2}/V s and a visible feature of electrons accumulated in channel and trapped in floating-gate were achieved in the memory with a TTC tunneling layer. High hole mobility resulted in a high on current and a large memory on/off ratio of 600 at the V{sub P}/V{sub E} of ±100 V. Both holes and electrons were injected into floating-gate and overwritten each other, which resulted in a bidirectional V{sub on} shift. As a result, an enlarged memory window of 28.6 V at the V{sub P}/V{sub E} of ±100 V and a zero reading voltage were achieved. Based on our results, a strategy is proposed to optimize FG-OTFT-NVMs by choosing a right tunneling layer to improve the majority carrier mobility and realize ambipolar carriers injecting and trapping in the floating-gate.« less

A Rigorous Treatment of Energy Extraction from a Rotating Black Hole

NASA Astrophysics Data System (ADS)

Finster, F.; Kamran, N.; Smoller, J.; Yau, S.-T.

2009-05-01

The Cauchy problem is considered for the scalar wave equation in the Kerr geometry. We prove that by choosing a suitable wave packet as initial data, one can extract energy from the black hole, thereby putting supperradiance, the wave analogue of the Penrose process, into a rigorous mathematical framework. We quantify the maximal energy gain. We also compute the infinitesimal change of mass and angular momentum of the black hole, in agreement with Christodoulou’s result for the Penrose process. The main mathematical tool is our previously derived integral representation of the wave propagator.

Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sato, Shin-ichiro, E-mail: sato.shinichiro@jaea.go.jp; Optoelectronics and Radiation Effects Branch, U.S. Naval Research Laboratory, Washington, DC 20375; Schmieder, Kenneth J.

2016-05-14

In order to expand the technology of III-V semiconductor devices with quantum structures to both terrestrial and space use, radiation induced defects as well as native defects generated in the quantum structures should be clarified. Electrically active defects in GaAs p{sup +}n diodes with embedded ten layers of InAs quantum dots (QDs) are investigated using Deep Level Transient Fourier Spectroscopy. Both majority carrier (electron) and minority carrier (hole) traps are characterized. In the devices of this study, GaP layers are embedded in between the QD layers to offset the compressive stress introduced during growth of InAs QDs. Devices are irradiatedmore » with high energy protons for three different fluences at room temperature in order to characterize radiation induced defects. Seven majority electron traps and one minority hole trap are found after proton irradiation. It is shown that four electron traps induced by proton irradiation increase in proportion to the fluence, whereas the EL2 trap, which appears before irradiation, is not affected by irradiation. These defects correspond to electron traps previously identified in GaAs. In addition, a 0.53 eV electron trap and a 0.14 eV hole trap are found in the QD layers before proton irradiation. It is shown that these native traps are also unaffected by irradiation. The nature of the 0.14 eV hole trap is thought to be Ga-vacancies in the GaP strain balancing layers.« less

HOLE-BLOCKING LAYERS FOR SILICON/ORGANIC HETEROJUNCTIONS: A NEW CLASS OF HIGH-EFFICIENCY LOW-COST PV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sturm, James

This project is the first investigation of the use of thin titanium dioxide layers on silicon as a hole-blocking / electron-transparent selective contact to silicon. The work was motivated by the goal of a high-efficiency low-cost silicon-based solar cells that could be processed entirely at low temperature (300 Degree Celsius) or less, without requiring plasma-processing.

Research on Supersonic Inlet Bleed

NASA Technical Reports Server (NTRS)

Davis, David O.; Vyas, Manan A.; Slater, John W.

2012-01-01

Phase I data results of the Fundamental Inlet Bleed Experiments project at NASA Glenn Research Center (GRC) are presented which include flow coefficient results for two single-hole boundary-layer bleed configurations. The bleed configurations tested are round holes at inclination angles of 90deg and 20deg both having length-to-diameter ratios of 2.0. Results were obtained at freestream Mach numbers of 1.33, 1.62, 1.98, 2.46, and 2.92 and unit Reynolds numbers of 0.984, 1.89, and 2.46 10(exp 7)/m. Approach boundary-layer data are presented for each flow condition and the flow coefficient results are compared to existing multi-hole data obtained under similar conditions. For the 90deg hole, the single and multi-hole distributions agree fairly well with the exception that under supercritical operation, the multi-hole data chokes at higher flow coefficient levels. This behavior is also observed for the 20deg hole but to a lesser extent. The 20deg hole also shows a markedly different characteristic at subcritical operation. Also presented are preliminary results of a Computational Fluid Dynamics (CFD) analysis of both configurations at the Mach 1.33 and a unit Reynolds number of 2.46 10(exp 7)/m. Comparison of the results shows the agreement to be very good.

Hypodense regions (holes) in the retinal nerve fiber layer in frequency-domain OCT scans of glaucoma patients and suspects.

PubMed

Xin, Daiyan; Talamini, Christine L; Raza, Ali S; de Moraes, Carlos Gustavo V; Greenstein, Vivienne C; Liebmann, Jeffrey M; Ritch, Robert; Hood, Donald C

2011-09-09

To better understand hypodense regions (holes) that appear in the retinal nerve fiber layer (RNFL) of frequency-domain optical coherence tomography (fdOCT) scans of patients with glaucoma and glaucoma suspects. Peripapillary circle (1.7-mm radius) and cube optic disc fdOCT scans were obtained on 208 eyes from 110 patients (57.4 ± 13.2 years) with glaucomatous optic neuropathy (GON) and 45 eyes of 45 controls (48.0 ± 12.6 years) with normal results of fundus examination. Holes in the RNFL were identified independently by two observers on the circle scans. Holes were found in 33 (16%) eyes of 28 (25%) patients; they were not found in any of the control eyes. Twenty-four eyes had more than one hole. Although some holes were relatively large, others were small. In general, the holes were located adjacent to blood vessels; only three eyes had isolated holes that were not adjacent to a vessel. The holes tended to be in the regions that are thickest in healthy controls and were associated with arcuate defects in patients. Holes were not seen in the center of the temporal disc region. They were more common in the superior (25 eyes) than in the inferior (15 eyes) disc. Of the 30 eyes with holes with reliable visual fields, seven were glaucoma suspect eyes with normal visual fields. The holes in the RNFL seen in patients with GON were probably due to a local loss of RNFL fibers and can occur in the eyes of glaucoma suspects with normal visual fields.

Simulation of hole-mobility in doped relaxed and strained Ge layers

NASA Astrophysics Data System (ADS)

Watling, Jeremy R.; Riddet, Craig; Chan, Morgan Kah H.; Asenov, Asen

2010-11-01

As silicon based metal-oxide-semiconductor field-effect transistors (MOSFETs) are reaching the limits of their performance with scaling, alternative channel materials are being considered to maintain performance in future complementary metal-oxide semiconductor technology generations. Thus there is renewed interest in employing Ge as a channel material in p-MOSFETs, due to the significant improvement in hole mobility as compared to Si. Here we employ full-band Monte Carlo to study hole transport properties in Ge. We present mobility and velocity-field characteristics for different transport directions in p-doped relaxed and strained Ge layers. The simulations are based on a method for over-coming the potentially large dynamic range of scattering rates, which results from the long-range nature of the unscreened Coulombic interaction. Our model for ionized impurity scattering includes the affects of dynamic Lindhard screening, coupled with phase-shift, and multi-ion corrections along with plasmon scattering. We show that all these effects play a role in determining the hole carrier transport in doped Ge layers and cannot be neglected.

"Holes" in Student Understanding: Addressing Prevalent Misconceptions regarding Atmospheric Environmental Chemistry

ERIC Educational Resources Information Center

Kerr, Sara C.; Walz, Kenneth A.

2007-01-01

There is a misconception among undergraduate students that global warming is caused by holes in the ozone layer. In this study, we evaluated the presence of this and other misconceptions surrounding atmospheric chemistry that are responsible for the entanglement of the greenhouse effect and the ozone hole in students' conceptual frameworks. We…

Algebraically special resonances of the Kerr-black-hole-mirror bomb

NASA Astrophysics Data System (ADS)

Hod, Shahar

2013-12-01

A corotating bosonic field interacting with a spinning Kerr black hole can extract rotational energy and angular momentum from the hole. This intriguing phenomenon is known as superradiant scattering. As pointed out by Press and Teukolsky, the black-hole-field system can be made unstable (explosive) by placing a reflecting mirror around the black hole, which prevents the extracted energy from escaping to infinity. This composed black-hole-mirror-field bomb has been studied extensively by many researchers. It is worth noting, however, that most former studies of the black-hole bomb phenomenon have focused on the specific case of confined scalar (spin-0) fields. In the present study we explore the physical properties of the higher-spin (electromagnetic and gravitational) black-hole bombs. It is shown that this composed system is amenable to an analytic treatment in the physically interesting regime of rapidly rotating black holes. In particular, we prove that the composed black-hole-mirror-field bomb is characterized by the unstable resonance frequency ω=mΩH+is·2πTBH (here s and m are, respectively, the spin parameter and the azimuthal harmonic index of the field, and ΩH and TBH are, respectively, the angular-velocity and the temperature of the rapidly spinning black hole). Our results provide evidence that the higher-spin (electromagnetic and gravitational) black-hole-mirror bombs are much more explosive than the extensively studied scalar black-hole-mirror bomb. In particular, it is shown here that the instability growth rates that characterize the higher-spin black-hole bombs are 2 orders of magnitude larger than the instability growth rate of the scalar black-hole bomb.

Numerical investigation of metal-semiconductor-insulator-semiconductor passivated hole contacts based on atomic layer deposited AlO x

NASA Astrophysics Data System (ADS)

Ke, Cangming; Xin, Zheng; Ling, Zhi Peng; Aberle, Armin G.; Stangl, Rolf

2017-08-01

Excellent c-Si tunnel layer surface passivation has been obtained recently in our lab, using atomic layer deposited aluminium oxide (ALD AlO x ) in the tunnel layer regime of 0.9 to 1.5 nm, investigated to be applied for contact passivation. Using the correspondingly measured interface properties, this paper compares the theoretical collection efficiency of a conventional metal-semiconductor (MS) contact on diffused p+ Si to a metal-semiconductor-insulator-semiconductor (MSIS) contact on diffused p+ Si or on undoped n-type c-Si. The influences of (1) the tunnel layer passivation quality at the tunnel oxide interface (Q f and D it), (2) the tunnel layer thickness and the electron and hole tunnelling mass, (3) the tunnel oxide material, and (4) the semiconductor capping layer material properties are investigated numerically by evaluation of solar cell efficiency, open-circuit voltage, and fill factor.

Suppressing longitudinal double-layer oscillations by using elliptically polarized laser pulses in the hole-boring radiation pressure acceleration regime

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu Dong; Yan, X. Q.; Key Laboratory of High Energy Density Physics Simulation, Ministry of Education, Peking University, Beijing 100871

It is shown that well collimated mono-energetic ion beams with a large particle number can be generated in the hole-boring radiation pressure acceleration regime by using an elliptically polarized laser pulse with appropriate theoretically determined laser polarization ratio. Due to the J Multiplication-Sign B effect, the double-layer charge separation region is imbued with hot electrons that prevent ion pileup, thus suppressing the double-layer oscillations. The proposed mechanism is well confirmed by Particle-in-Cell simulations, and after suppressing the longitudinal double-layer oscillations, the ion beams driven by the elliptically polarized lasers own much better energy spectrum than those by circularly polarized lasers.

System of extraction of volatiles from soil using microwave processes

NASA Technical Reports Server (NTRS)

Ethridge, Edwin C. (Inventor); Kaukler, William F. (Inventor)

2013-01-01

A device for the extraction and collection of volatiles from soil or planetary regolith. The device utilizes core drilled holes to gain access to underlying volatiles below the surface. Microwave energy beamed into the holes penetrates through the soil or regolith to heat it, and thereby produces vapor by sublimation. The device confines and transports volatiles to a cold trap for collection.

Evaluation of Cameroonian plants towards experimental bone regeneration.

PubMed

Ngueguim, Florence Tsofack; Khan, Mohd Parvez; Donfack, Jean Hubert; Siddiqui, Jawed Akhtar; Tewari, Deepshikha; Nagar, Geet K; Tiwari, Satish C; Theophile, Dimo; Maurya, Rakesh; Chattopadhyay, Naibedya

2012-05-07

Elephantopus mollis, Spilanthes africana, Urena lobata, Momordica multiflora, Asystasia gangetica and Brillantaisia ovariensis are used in Cameroonian traditional medicine for the treatment of bone diseases and fracture repair. The aim of this study was to evaluate the effect of ethanolic extracts of six Cameroonian medicinal plants on bone regeneration following bone and marrow injury. Ethanol extract of Cameroonian medicinal plants were administered (each extract at 250, 500 and 750mg/kg doses) orally to adult female Sprague-Dawley rats having a drill hole injury (0.8mm) in the femur diaphysis. Vehicle (gum-acacia in distilled water) was given to the control group. After 12 days of treatment, animals were euthanized and femur bones collected. Confocal microscopy of fractured bone was performed to evaluate bone regeneration (calcein labeling). Only active plant extracts were used for further experiments. Thus, callus was analyzed by microcomputed tomography. Osteogenic effects of the extracts were evaluated by assessing mineralized nodules formation of bone marrow stromal cells and osteoblast recruitment at drill hole site by immunohistochemistry. Ethanolic extract of the leaves and twigs of Elephantopus mollis (EM) and whole plant of Spilanthes africana (SA) dose-dependently stimulated bone regeneration at the drill hole site. EM at 250 and 750mg/kg doses and SA at 750mg/kg dose significantly increased mineral deposition compared to controls. Both extracts at 500 and 750mg/kg doses improved microarchitecture of the regenerating bone evident from increased bone volume fraction, trabecular thickness, trabecular number, and decreased trabecular separation and structure model index. EM and SA extracts increased the formation of mineralized nodules from the bone marrow stromal cells. In addition, EM and SA extracts increased osteoblast recruitment at the drill hole site evident from increased Runx-2 positive cells following their treatments compared to control. Ethanolic extracts of EM and SA accelerate fracture repair in rats via stimulatory effects on osteoblast differentiation and mineralization, thereby justifying their traditional use. Copyright © 2012 Elsevier Ireland Ltd. All rights reserved.

Flow visualization of discrete hole film cooling for gas turbine applications

NASA Technical Reports Server (NTRS)

Colladay, R. S.; Russell, L. M.

1975-01-01

Film injection from discrete holes in a three row staggered array with 5-diameter spacing is studied for three different hole angles: (1) normal, (2) slanted 30 deg to the surface in the direction of the mainstream, and (3) slanted 30 deg to the surface and 45 deg laterally to the mainstream. The boundary layer thickness-to-hole diameter ratio and Reynolds number are typical of gas turbine film cooling applications. Two different injection locations are studied to evaluate the effect of boundary layer thickness on film penetration and mixing. Detailed streaklines showing the turbulent motion of the injected air are obtained by photographing very small neutrally buoyant helium filled 'soap' bubbles which follow the flow field. Unlike smoke, which diffuses rapidly in the high turbulent mixing region associated with discrete hole blowing, the bubble streaklines passing downstream injection locations are clearly identifiable and can be traced back to their origin. Visualization of surface temperature patterns obtained from infrared photographs of a similar film cooled surface are also included.

Study of tapping process of carbon fiber reinforced plastic composites/AA7075 stacks

NASA Astrophysics Data System (ADS)

D'Orazio, Alessio; Mehtedi, Mohamad El; Forcellese, Archimede; Nardinocchi, Alessia; Simoncini, Michela

2018-05-01

The present investigation aims at studying the tapping process of a three-layer stack constituted by two CFRP layers and a core plate in AA7075 aluminum alloy. The CFRP laminates were obtained by a pre-impregnated woven sample made up of T700 carbon fibers and a thermoset epoxy matrix. Tapping experiments were performed on a 5-axis machining center instrumented with a dynamometer to measure thrust force generated during process. A high-speed steel tool, coated with nanocomposite TiAlN, was used. According to the tool manufacturer recommendations, rotational speed and feed rate were 800 rpm and 1000 mm/min, respectively. Similar thrust force time history responses were obtained by tapping different holes, even though the vertical force increases with number of threaded holes. Furthermore, a quantitative evaluation of delamination at the periphery of entry holes was carried out. The delamination at the entry hole strongly increases with number of threaded holes.

CuSCN-Based Inverted Planar Perovskite Solar Cell with an Average PCE of 15.6%.

PubMed

Ye, Senyun; Sun, Weihai; Li, Yunlong; Yan, Weibo; Peng, Haitao; Bian, Zuqiang; Liu, Zhiwei; Huang, Chunhui

2015-06-10

Although inorganic hole-transport materials usually possess high chemical stability, hole mobility, and low cost, the efficiency of most of inorganic hole conductor-based perovskite solar cells is still much lower than that of the traditional organic hole conductor-based cells. Here, we have successfully fabricated high quality CH3NH3PbI3 films on top of a CuSCN layer by utilizing a one-step fast deposition-crystallization method, which have lower surface roughness and smaller interface contact resistance between the perovskite layer and the selective contacts in comparison with the films prepared by a conventional two-step sequential deposition process. The average efficiency of the CuSCN-based inverted planar CH3NH3PbI3 solar cells has been improved to 15.6% with a highest PCE of 16.6%, which is comparable to that of the traditional organic hole conductor-based cells, and may promote wider application of the inexpensive inorganic materials in perovskite solar cells.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Damtie, Fikeraddis A., E-mail: Fikeraddis.Damtie@teorfys.lu.se; Wacker, Andreas, E-mail: Andreas.Wacker@fysik.lu.se; Karki, Khadga J., E-mail: Khadga.Karki@chemphys.lu.se

Multiple exciton generation (MEG) is a process in which more than one electron hole pair is generated per absorbed photon. It allows us to increase the efficiency of solar energy harvesting. Experimental studies have shown the multiple exciton generation yield of 1.2 in isolated colloidal quantum dots. However real photoelectric devices require the extraction of electron hole pairs to electric contacts. We provide a systematic study of the corresponding quantum coherent processes including extraction and injection and show that a proper design of extraction and injection rates enhances the yield significantly up to values around 1.6.

Recovery and Lithologic Analysis of Sediment from Hole UT-GOM2-1-H002, Green Canyon 955, Northern Gulf of Mexico

NASA Astrophysics Data System (ADS)

Kinash, N.; Cook, A.; Sawyer, D.; Heber, R.

2017-12-01

In May 2017 the University of Texas led a drilling and pressure coring expedition in the northern Gulf of Mexico, UT-GOM2-01. The holes were located in Green Canyon Block 955, where the Gulf of Mexico Joint Industry Project Leg II identified an approximately 100m thick hydrate-filled course-grained levee unit in 2009. Two separate wells were drilled into this unit: Holes H002 and H005. In Hole H002, a cutting shoe drill bit was used to collect the pressure cores, and only 1 of the 8 cores collected was pressurized during recovery. The core recovery in Hole H002 was generally poor, about 34%, while the only pressurized core had 45% recovery. In Hole H005, a face bit was used during pressure coring where 13 cores were collected and 9 cores remained pressurized. Core recovery in Hole H005 was much higher, at about 75%. The type of bit was not the only difference between the holes, however. Drilling mud was used throughout the drilling and pressure coring of Hole H002, while only seawater was used during the first 80m of pressure cores collected in Hole H005. Herein we focus on lithologic analysis of Hole H002 with the goal of documenting and understanding core recovery in Hole H002 to compare with Hole H005. X-ray Computed Tomography (XCT) images were collected by Geotek on pressurized cores, mostly from Hole H005, and at Ohio State on unpressurized cores, mostly from Hole H002. The XCT images of unpressurized cores show minimal sedimentary structures and layering, unlike the XCT images acquired on the pressurized, hydrate-bearing cores. Only small sections of the unpressurized cores remained intact. The unpressurized cores appear to have two prominent facies: 1) silt that did not retain original sedimentary fabric and often was loose within the core barrel, and 2) dense mud sections with some sedimentary structures and layering present. On the XCT images, drilling mud appears to be concentrated on the sides of cores, but also appears in layers and fractures within intact core sections. On microscope images, the drilling mud also appears to saturate the pores in some silt intervals. Further analysis of the unpressurized cores is planned, including X-ray diffraction, grain size analysis and porosity measurements. These results will be compared to the pressurized cores to understand if further lithologic factors could have affected core recovery.

Post-Treatment-Free Solution-Processed Reduced Phosphomolybdic Acid Containing Molybdenum Oxide Units for Efficient Hole-Injection Layers in Organic Light-Emitting Devices.

PubMed

Ohisa, Satoru; Endo, Kohei; Kasuga, Kosuke; Suzuki, Michinori; Chiba, Takayuki; Pu, Yong-Jin; Kido, Junji

2018-02-19

We report the development of solution-processed reduced phosphomolybdic acid (rPMA) containing molybdenum oxide units for post-treatment-free hole-injection layers (HILs) in organic light-emitting devices (OLEDs). The physical and chemical properties of rPMA, including its structure, solubility in several solvents, film surface roughness, work function, and valence states, were investigated. The formation of gap states just below the Fermi level of rPMA was observed. Without any post-treatment after the formation of rPMA films, OLEDs employing rPMA as an HIL exhibited a very low driving voltage and a high luminous efficiency. The low driving voltage was attributed to the energy level alignment between the gap states formed by reduction and the HOMO level of the hole-transport layer material N,N'-bis(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine.

Flexible ITO-free organic solar cells applying aqueous solution-processed V2O5 hole transport layer: An outdoor stability study

NASA Astrophysics Data System (ADS)

Lima, F. Anderson S.; Beliatis, Michail J.; Roth, Bérenger; Andersen, Thomas R.; Bortoti, Andressa; Reyna, Yegraf; Castro, Eryza; Vasconcelos, Igor F.; Gevorgyan, Suren A.; Krebs, Frederik C.; Lira-Cantu, Mónica

2016-02-01

Solution processable semiconductor oxides have opened a new paradigm for the enhancement of the lifetime of thin film solar cells. Their fabrication by low-cost and environmentally friendly solution-processable methods makes them ideal barrier (hole and electron) transport layers. In this work, we fabricate flexible ITO-free organic solar cells (OPV) by printing methods applying an aqueous solution-processed V2O5 as the hole transport layer (HTL) and compared them to devices applying PEDOT:PSS. The transparent conducting electrode was PET/Ag/PEDOT/ZnO, and the OPV configuration was PET/Ag/PEDOT/ZnO/P3HT:PC60BM/HTL/Ag. Outdoor stability analyses carried out for more than 900 h revealed higher stability for devices fabricated with the aqueous solution-processed V2O5.

Pulse compression using a tapered microstructure optical fiber.

PubMed

Hu, Jonathan; Marks, Brian S; Menyuk, Curtis R; Kim, Jinchae; Carruthers, Thomas F; Wright, Barbara M; Taunay, Thierry F; Friebele, E J

2006-05-01

We calculate the pulse compression in a tapered microstructure optical fiber with four layers of holes. We show that the primary limitation on pulse compression is the loss due to mode leakage. As a fiber's diameter decreases due to the tapering, so does the air-hole diameter, and at a sufficiently small diameter the guided mode loss becomes unacceptably high. For the four-layer geometry we considered, a compression factor of 10 can be achieved by a pulse with an initial FWHM duration of 3 ps in a tapered fiber that is 28 m long. We find that there is little difference in the pulse compression between a linear taper profile and a Gaussian taper profile. More layers of air-holes allows the pitch to decrease considerably before losses become unacceptable, but only a moderate increase in the degree of pulse compression is obtained.

NEUTRONIC REACTOR

DOEpatents

Fermi, E.

1960-04-01

A nuclear reactor is described consisting of blocks of graphite arranged in layers, natural uranium bodies disposed in holes in alternate layers of graphite blocks, and coolant tubes disposed in the layers of graphite blocks which do not contain uranium.

Enhancing Photovoltaic Performance of Inverted Planar Perovskite Solar Cells by Cobalt-Doped Nickel Oxide Hole Transport Layer.

PubMed

Xie, Yulin; Lu, Kai; Duan, Jiashun; Jiang, Youyu; Hu, Lin; Liu, Tiefeng; Zhou, Yinhua; Hu, Bin

2018-04-25

Electron and hole transport layers have critical impacts on the overall performance of perovskite solar cells (PSCs). Herein, for the first time, a solution-processed cobalt (Co)-doped NiO X film was fabricated as the hole transport layer in inverted planar PSCs, and the solar cells exhibit 18.6% power conversion efficiency. It has been found that an appropriate Co-doping can significantly adjust the work function and enhance electrical conductivity of the NiO X film. Capacitance-voltage ( C- V) spectra and time-resolved photoluminescence spectra indicate clearly that the charge accumulation becomes more pronounced in the Co-doped NiO X -based photovoltaic devices; it, as a consequence, prevents the nonradiative recombination at the interface between the Co-doped NiO X and the photoactive perovskite layers. Moreover, field-dependent photoluminescence measurements indicate that Co-doped NiO X -based devices can also effectively inhibit the radiative recombination process in the perovskite layer and finally facilitate the generation of photocurrent. Our work indicates that Co-doped NiO X film is an excellent candidate for high-performance inverted planar PSCs.

On the AlxGa1-xN/AlyGa1-yN/AlxGa1-xN (x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Li, Luping; Bi, Wengang; Zhang, Zi-Hui

2018-01-01

This work proposes the [0001] oriented AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) possessing a specifically designed p-electron blocking layer (p-EBL) to achieve the high internal quantum efficiency. Both electrons and holes can be efficiently injected into the active region by adopting the Al0.60Ga0.40N/Al0.50Ga0.50N/Al0.60Ga0.40N structured p-EBL, in which a p-Al0.50Ga0.50N layer is embedded into the p-EBL. Moreover, the impact of different thicknesses for the p-Al0.50Ga0.50N insertion layer on the hole and electron injections has also been investigated. Compared with the DUV LED with the bulk p-Al0.60Ga0.40N as the EBL, the proposed LED architectures improve the light output power if the thickness of the p-Al0.50Ga0.50N insertion layer is properly designed.

Composite hydrogen separation element and module

DOEpatents

Edlund, D.J.; Newbold, D.D.; Frost, C.B.

1997-07-08

There are disclosed improvements in multicomponent composite metal membranes useful for the separation of hydrogen, the improvements comprising the provision of at least one common-axis hole through all components of the composite membrane and the provision of a gas-tight seal around the periphery of the hole or holes through a coating metal layer of the membrane. 11 figs.

Composite hydrogen separation element and module

DOEpatents

Edlund, David J.; Newbold, David D.; Frost, Chester B.

1997-01-01

There are disclosed improvements in multicomponent composite metal membranes useful for the separation of hydrogen, the improvements comprising the provision of at least one common-axis hole through all components of the composite membrane and the provision of a gas-tight seal around the periphery of the hole or holes through a coating metal layer of the membrane.

Experimental studies of MOS inversion and accumulation layers: Quantum mechanical effects and mobility

NASA Astrophysics Data System (ADS)

Chindalore, Gowrishankar L.

The development of fast, multi-functional, and energy efficient integrated circuits, is made possible by aggressively scaling the gate lengths of the MOS devices into the sub-quarter micron regime. However, with the increasing cost of fabrication, there is a strong need for the development of reliable and accurate device simulation capabilities. The development of the theoretical models for simulators is guided by extensive experimental data, which enable an experimental verification of the models, and lead to a better understanding of the underlying physics. This dissertation presents the methodology and the results for one such experimental effort, where two important physical effects in the inversion layer and the accumulation layer of a MOS device, namely, the quantum mechanical (QM) effects and the carrier mobility are investigated. Accordingly, this dissertation has been divided into two parts, with the first part discussing the increase in the threshold voltage and the accumulation electrical oxide thickness due to QM effects. The second part discusses the methodology and the experimental results for the extraction of the majority carrier mobilities in the accumulation layers of a MOSFET. The continued scaling of the MOS gate length requires decreased gate oxide thickness (tox) and increased channel doping (NB) in order to improve device performance while suppressing the short- channel effects. The combination of the two result in large enough transverse electric fields to cause significant quantization of the carriers in the potential well at the Si/SiO2 interface. Hence, compared to the classical calculations (where the QM effects are ignored), the QM effects are found to lead to an increase in the experimental threshold voltage by approximately 100mV, and an overestimation of the physical oxide thickness by approximately 3-4A, in MOSFET devices with a gate oxide thickness and the doping level anticipated for technologies with sub-quarter micron gate lengths. Thus, the experimental results indicate the need for using accurate QM models for simulating sub-quarter micron devices. Carrier mobility is a fundamental semiconductor device transport parameter that has been extensively characterized for both electrons and holes in the silicon bulk and MOS inversion layers. Accumulation layer mobility (μacc) has become increasingly important as the MOS devices have scaled to deep submicron gate lengths, and much effort has been required to achieve increased drive current. However, very little experimental data has been reported for carrier mobility in the MOS accumulation layers (Sun80, Man89). Hence, in this research work, the accumulation layer mobilities were extracted using buried-channel MOSFETs for both the electrons and holes, and for a wide range of doping levels at temperatures ranging from 25C to 150C. The experimental μacc is found to be greater than the corresponding bulk and the inversion layer mobilities, at low to moderate effective fields. However, at very high effective fields, where phonon and surface roughness scattering are dominant, the mobility behavior is found to be very similar to that of the inversion carriers. The extensive set of experimental data will enable the development of accurate local accumulation mobility models for inclusion in 2-D device simulators.

Flow visualization of film cooling with spanwise injection from a small array of holes and compound-angle injection from a large array

NASA Technical Reports Server (NTRS)

Russell, L. M.

1978-01-01

Film injection from discrete holes in a smooth, flat plate was studied for two configurations: (1) spanwise injection through a four hole staggered array; and (2) compound angle injection through a 49 hole staggered array. The ratio of boundary layer thicknesses to hole diameter and the Reynolds number were typical of gas turbine film cooling applications. Streaklines showing the motion of the injected air were obtained by photographing small, neutrally buoyant, helium-filled soap bubbles that followed the flow field.

High precision and high aspect ratio laser drilling: challenges and solutions

NASA Astrophysics Data System (ADS)

Uchtmann, Hermann; He, Chao; Gillner, Arnold

2016-03-01

Laser drilling is a very versatile tool to produce high accuracy bores in small and large geometries using different technologies. In large and deep hole drilling laser drilling can be found in drilling cooling holes into turbomachinery components such as turbine blades. In micro drilling, the technology is used for the generation of nozzles and filters. However, especially in macro drilling, the process often causes microstructure changes and induces defects such as recast layers and cracks. The defects are caused by the melt dominated drilling process by using pulse durations in the range of some 100 μm up to a few ms. A solution of this problem is the use of ultrashort pulsed laser radiation with pulse durations in the range of some 100 fs up to a few ps, however with the disadvantage of long drilling times. Thus, the aim of this work is to combine the productive process by using ms pulsed fiber laser radiation with subsequent ablation of existing recast layers at the hole wall by using ultrashort pulsed laser radiation. By using fast scanning techniques the recast layer can be avoided almost completely. With a similar technology also very small hole can be produced. Using a rotating dove prism a circular oscillation of the laser spots is performed and holes are drilled at intervals in 1 mm thick stainless steel (1.4301) by ultra-short laser pulses of 7 ps at 515 nm. The formation of hole and the behavior of energy deposition differ from other drilling strategies due to the helical revolution. The temporal evolution of the hole shape is analyzed by means of SEM techniques from which three drilling phases can be distinguished.

Kinetic Electric Field Signatures Associated with Magnetic Turbulence and Their Impact on Space Plasma Environments

NASA Astrophysics Data System (ADS)

Goodrich, K. A.

Magnetic turbulence is a universal phenomenon that occurs in space plasma physics, the small-scale processes of which is not well understood. This thesis presents on observational analysis of kinetic electric field signatures associated with magnetic turbulence, in an attempt to examine its underlying microphysics. Such kinetic signatures include small-scale magnetic holes, double layers, and phase-space holes. The first and second parts of this thesis presents observations of small-scale magnetic holes, observed depressions in total magnetic field strength with spatial widths on the order of or less than the ion Larmor radius, in the near-Earth plasmasheet. Here I demonstrate electric field signatures associated small-scale magnetic holes are consistent with the presence of electron Hall currents, currents oriented perpendicularly to the magnetic field. Further investigation of these fields indicates that the Hall electron current is primarily responsible for the depletion of | B| associated with small-scale magnetic holes. I then present evidence that suggests these currents can descend to smaller spatial scales, indicating they participate in a turbulent cascade to smaller scales, a link that has not been observable suggested until now. The last part of this thesis investigates the presence of double layers and phase-space holes in a magnetically turbulent region of the terrestrial bow shock. In this part, I present evidence that these same signatures can be generated via field-aligned currents generated by strong magnetic fluctuations. I also show that double layers and phase-space holes, embedded within localized nonlinear ion acoustic waves, correlate with localized electron heating and possible ion deceleration, indicating they play a role in turbulent dissipation of kinetic to thermal energy. This thesis clearly demonstrates that energy dissipation in turbulent plasma is closely linked to the small-scale electric field environment.

Hot cell shield plug extraction apparatus

DOEpatents

Knapp, Philip A.; Manhart, Larry K.

1995-01-01

An apparatus is provided for moving shielding plugs into and out of holes in concrete shielding walls in hot cells for handling radioactive materials without the use of external moving equipment. The apparatus provides a means whereby a shield plug is extracted from its hole and then swung approximately 90 degrees out of the way so that the hole may be accessed. The apparatus uses hinges to slide the plug in and out and to rotate it out of the way, the hinge apparatus also supporting the weight of the plug in all positions, with the load of the plug being transferred to a vertical wall by means of a bolting arrangement.

Study of Exciton Hopping Transport in PbS Colloidal Quantum Dot Thin Films Using Frequency- and Temperature-Scanned Photocarrier Radiometry

NASA Astrophysics Data System (ADS)

Hu, Lilei; Mandelis, Andreas; Melnikov, Alexander; Lan, Xinzheng; Hoogland, Sjoerd; Sargent, Edward H.

2017-01-01

Solution-processed colloidal quantum dots (CQDs) are promising materials for realizing low-cost, large-area, and flexible photovoltaic devices. The study of charge carrier transport in quantum dot solids is essential for understanding energy conversion mechanisms. Recently, solution-processed two-layer oleic-acid-capped PbS CQD solar cells with one layer treated with tetrabutylammonium iodide (TBAI) serving as the main light-absorbing layer and the other treated with 1,2-ethanedithiol (EDT) acting as an electron-blocking/hole-extraction layer were reported. These solar cells demonstrated a significant improvement in power conversion efficiency of 8.55% and long-term air stability. Coupled with photocarrier radiometry measurements, this work used a new trap-state mediated exciton hopping transport model, specifically for CQD thin films, to unveil and quantify exciton transport mechanisms through the extraction of hopping transport parameters including exciton lifetimes, hopping diffusivity, exciton detrapping time, and trap-state density. It is shown that PbS-TBAI has higher trap-state density than PbS-EDT that results in higher PbS-EDT exciton lifetimes. Hopping diffusivities of both CQD thin film types show similar temperature dependence, particularly higher temperatures yield higher hopping diffusivity. The higher diffusivity of PbS-TBAI compared with PbS-EDT indicates that PbS-TBAI is a much better photovoltaic material than PbS-EDT. Furthermore, PCR temperature spectra and deep-level photothermal spectroscopy provided additional insights to CQD surface trap states: PbS-TBAI thin films exhibit a single dominant trap level, while PbS-EDT films with lower trap-state densities show multiple trap levels.

Comparative evaluation of ethanolic extracts of Bacopa monnieri, Evolvulus alsinoides, Tinospora cordifolia and their combinations on cognitive functions in rats.

PubMed

Gupta, Avneet; Raj, Hem; Karchuli, Manvender Singh; Upmanyu, Neeraj

2013-12-01

The effects of ethanolic extracts of whole plants of Bacopa monnieri (BME), Evolvulus alsinoides (EAE), Tinospora cordifolia (TCE) and their combinations in equal proportion [CEP-1 (BME+EAE), CEP-2 (BME+TCE), CEP-3 (EAE+TCE) and CEP-4 (BME+EAE+TCE)] were tested in amnesic rats using Radial arm maze task performance (RAM) and Barnes maze test at 200 mg/kg p.o. The latency to find food and target hole was observed in RAM and Barnes maze respectively. Cognitive dysfunction was induced by scopolamine (0.3 mg/kg i.p.) treatment. BME, EAE, TCE and their combinations of equal proportion (CEPs) showed significant decrease in latency to find food and target hole in RAM and Barnes maze respectively. Inter comparison among single extract alone treated groups revealed that BME treated animals showed significant difference as compared to EAE and TCE treated animals. All combinations of equal proportion (CEPs) of these extracts showed significant difference in latency to find food and target hole as compared to single extracts treated animals. CEP-1 showed significantly better effect as compared to CEP-2 and CEP-3. Significant difference in latency to find food and target hole was also present between CEP-2 and CEP-3. Effect of CEP-4 was found to be significantly better than CEP-1, CEP-2 and CEP-3 treated rats in both models. From present investigation, it was concluded that ethanolic extract of Bacopa monnieri, Evolvulus alsinoides and Tinospora cordifolia provided better nootropic effect when used in combination.

Flow visualization of discrete hole film cooling for gas turbine applications

NASA Technical Reports Server (NTRS)

Colladay, R. S.; Russell, L. M.

1975-01-01

Film injection from discrete holes in a three row staggered array with 5-diameter spacing is studied. The boundary layer thickness-to-hole diameter ratio and Reynolds number are typical of gas turbine film cooling applications. Two different injection locations are studied to evaluate the effect of boundary layer thickness on film penetration and mixing. Detailed streaklines showing the turbulent motion of the injected air are obtained by photographing neutrally buoyant helium filled soap bubbles which follow the flow field. The bubble streaklines passing downstream injection locations are clearly identifiable and can be traced back to their origin. Visualization of surface temperature patterns obtained from infrared photographs of a similar film cooled surface are also included.

Highly efficient solution-processed phosphorescent organic light-emitting devices with double-stacked hole injection layers

NASA Astrophysics Data System (ADS)

Chen, Yuehua; Hao, Lin; Zhang, Xinwen; Zhang, Xiaolin; Liu, Mengjiao; Zhang, Mengke; Wang, Jiong; Lai, Wen-Yong; Huang, Wei

2017-08-01

In this paper, solution-processed nickel oxide (NiOx) is used as hole-injection layers (HILs) in solution-processed phosphorescent organic light-emitting diodes (PhOLEDs). Serious exciton quenching is verified at the NiOx/emitting layer (EML) interface, resulting in worse device performance. The device performance is significantly improved by inserting a layer of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS) between the EML and NiOx. The solution-processed blue PhOLED with the double-stacked NiOx/PEDOT:PSS HILs shows a maximum current efficiency of 30.5 cd/A, which is 75% and 30% higher than those of the devices with a single NiOx HIL and a PEDOT:PSS HIL, respectively. Improvement of device efficiency can be attributed to reducing exciton quenching of the PEDOT:PSS layer as well as the electron blocking effect of the NiOx layer.

Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

DOEpatents

Forrest, Stephen R.; Wei, Guodan

2010-07-06

A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

Understanding charge transfer dynamics in QDs-TiO2 nanorod array photoanodes for solar fuel generation

NASA Astrophysics Data System (ADS)

Li, Jiangtian; McClure, Joshua P.; Fu, Richard; Jiang, Rongzhong; Chu, Deryn

2018-01-01

Harvesting light to drive water splitting for hydrogen generation is an attractive approach to satisfy the urgent energy demands. The design and fabrication of photoelectrode materials that are able to harvest sunlight is an important scientific undertaking. In this study, a two-quantum-dot (QD) layer is developed to decorate one-dimensional TiO2 nanorod arrays, which are subsequently utilized as photoanodes to harvest the wide-spectrum sunlight for water splitting. The QD-coated TiO2 nanorod arrays extend the light absorption range from the UV into the visible region yielding increased solar-to-hydrogen efficiencies. Transient photocurrent decay measurements demonstrate that the multi-layer CdSe-CdS QDs deposited onto the TiO2 nanorod arrays result in a stepwise band alignment that not only improves the hole extraction but also facilitates electron injection from the QDs to TiO2 rods. Moreover, the multi-heterojunction photoanode introduces interfacial states that act as recombination centers to trap the photogenerated electrons.

Enhancing Efficiency of Perovskite Solar Cells via Surface Passivation with Graphene Oxide Interlayer.

PubMed

Li, Hao; Tao, Leiming; Huang, Feihong; Sun, Qiang; Zhao, Xiaojuan; Han, Junbo; Shen, Yan; Wang, Mingkui

2017-11-08

Perovskite solar cells have been demonstrated as promising low-cost and highly efficient next-generation solar cells. Enhancing V OC by minimization the interfacial recombination kinetics can further improve device performance. In this work, we for the first time reported on surface passivation of perovskite layers with chemical modified graphene oxides, which act as efficient interlayer to reduce interfacial recombination and enhance hole extraction as well. Our modeling points out that the passivation effect mainly comes from the interaction between functional group (4-fluorophenyl) and under-coordinated Pb ions. The resulting perovskite solar cells achieved high efficient power conversion efficiency of 18.75% with enhanced high open circuit V OC of 1.11 V. Ultrafast spectroscopy, photovoltage/photocurrent transient decay, and electronic impedance spectroscopy characterizations reveal the effective passivation effect and the energy loss mechanism. This work sheds light on the importance of interfacial engineering on the surface of perovskite layers and provides possible ways to improve device efficiency.

Ambipolar transport of silver nanoparticles decorated graphene oxide field effect transistors

NASA Astrophysics Data System (ADS)

Sarkar, Kalyan Jyoti; Sarkar, K.; Pal, B.; Kumar, Aparabal; Das, Anish; Banerji, P.

2018-05-01

In this article, we report ambipolar field effect transistor (FET) by using graphene oxide (GO) as a gate dielectric material for silver nanoparticles (AgNPs) decorated GO channel layer. GO was synthesized by Hummers' method. The AgNPs were prepared via photochemical reduction of silver nitrate solution by using monoethanolamine as a reducing agent. Morphological properties of channel layer were characterized by Field Effect Scanning Electron Microscopy (FESEM). Fourier Transform Infrared Spectroscopy (FTIR) was carried out to characterize GO thin film. For device fabrication gold (Au) was deposited as source-drain contact and aluminum (Al) was taken as bottom contact. Electrical measurements were performed by back gate configuration. Ambipolar transport behavior was explained from transfer characteristics. A maximum electron mobiliy of 6.65 cm2/Vs and a hole mobility of 2.46 cm2/Vs were extracted from the transfer characteristics. These results suggest that GO is a potential candidate as a gate dielectric material for thin film transistor applications and also provides new insights in GO based research.

Selective contacts drive charge extraction in quantum dot solids via asymmetry in carrier transfer kinetics.

PubMed

Mora-Sero, Ivan; Bertoluzzi, Luca; Gonzalez-Pedro, Victoria; Gimenez, Sixto; Fabregat-Santiago, Francisco; Kemp, Kyle W; Sargent, Edward H; Bisquert, Juan

2013-01-01

Colloidal quantum dot solar cells achieve spectrally selective optical absorption in a thin layer of solution-processed, size-effect tuned, nanoparticles. The best devices built to date have relied heavily on drift-based transport due to the action of an electric field in a depletion region that extends throughout the thickness of the quantum dot layer. Here we study for the first time the behaviour of the best-performing class of colloidal quantum dot films in the absence of an electric field, by screening using an electrolyte. We find that the action of selective contacts on photovoltage sign and amplitude can be retained, implying that the contacts operate by kinetic preferences of charge transfer for either electrons or holes. We develop a theoretical model to explain these experimental findings. The work is the first to present a switch in the photovoltage in colloidal quantum dot solar cells by purposefully formed selective contacts, opening the way to new strategies in the engineering of colloidal quantum dot solar cells.

Efficient Vacuum-Deposited Ternary Organic Solar Cells with Broad Absorption, Energy Transfer, and Enhanced Hole Mobility.

PubMed

Shim, Hyun-Sub; Moon, Chang-Ki; Kim, Jihun; Wang, Chun-Kai; Sim, Bomi; Lin, Francis; Wong, Ken-Tsung; Seo, Yongsok; Kim, Jang-Joo

2016-01-20

The use of multiple donors in an active layer is an effective way to boost the efficiency of organic solar cells by broadening their absorption window. Here, we report an efficient vacuum-deposited ternary organic photovoltaic (OPV) using two donors, 2-((2-(5-(4-(diphenylamino)phenyl)thieno[3,2-b]thiophen-2-yl)thiazol-5-yl)methylene)malononitrile (DTTz) for visible absorption and 2-((7-(5-(dip-tolylamino)thiophen-2-yl)benzo[c]-[1,2,5]thiadiazol-4-yl)methylene)malononitrile (DTDCTB) for near-infrared absorption, codeposited with C70 in the ternary layer. The ternary device achieved a power conversion efficiency of 8.02%, which is 23% higher than that of binary OPVs. This enhancement is the result of incorporating two donors with complementary absorption covering wavelengths of 350 to 900 nm with higher hole mobility in the ternary layer than that of binary layers consisting of one donor and C70, combined with energy transfer from the donor with lower hole mobility (DTTz) to that with higher mobility (DTDCTB). This structure fulfills all the requirements for efficient ternary OPVs.

Hole transport in c-plane InGaN-based green laser diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Yang; Liu, Jianping, E-mail: jpliu2010@sinano.ac.cn; Tian, Aiqin

2016-08-29

Hole transport in c-plane InGaN-based green laser diodes (LDs) has been investigated by both simulations and experiments. It is found that holes can overflow from the green double quantum wells (DQWs) at high current density, which reduces carrier injection efficiency of c-plane InGaN-based green LDs. A heavily silicon-doped layer right below the green DQWs can effectively suppress hole overflow from the green DQWs.

Direct Numerical Simulation of A Shaped Hole Film Cooling Flow

NASA Astrophysics Data System (ADS)

Oliver, Todd; Moser, Robert

2015-11-01

The combustor exit temperatures in modern gas turbine engines are generally higher than the melting temperature of the turbine blade material. Film cooling, where cool air is fed through holes in the turbine blades, is one strategy which is used extensively in such engines to reduce heat transfer to the blades and thus reduce their temperature. While these flows have been investigated both numerically and experimentally, many features are not yet well understood. For example, the geometry of the hole is known to have a large impact on downstream cooling performance. However, the details of the flow in the hole, particularly for geometries similar to those used in practice, are generally know well-understood, both because it is difficult to experimentally observe the flow inside the hole and because much of the numerical literature has focused on round hole simulations. In this work, we show preliminary direct numerical simulation results for a film cooling flow passing through a shaped hole into a the boundary layer developing on a flat plate. The case has density ratio 1.6, blowing ratio 2.0, and the Reynolds number (based on momentum thickness) of incoming boundary layer is approximately 600. We compare the new simulations against both previous experiments and LES.

Photocurrent generation in SnO2 thin film by surface charged chemisorption O ions

NASA Astrophysics Data System (ADS)

Lee, Po-Ming; Liao, Ching-Han; Lin, Chia-Hua; Liu, Cheng-Yi

2018-06-01

We report a photocurrent generation mechanism in the SnO2 thin film surface layer by the charged chemisorption O ions on the SnO2 thin film surface induced by O2-annealing. A critical build-in electric field in the SnO2 surface layer resulted from the charged O ions on SnO2 surface prolongs the lifetime and reduces the recombination probability of the photo-excited electron-hole pairs by UV-laser irradiation (266 nm) in the SnO2 surface layer, which is the key for the photocurrent generation in the SnO2 thin film surface layer. The critical lifetime of prolonged photo-excited electron-hole pair is calculated to be 8.3 ms.

Orbital-dependent Electron-Hole Interaction in Graphene and Associated Multi-Layer Structures

PubMed Central

Deng, Tianqi; Su, Haibin

2015-01-01

We develop an orbital-dependent potential to describe electron-hole interaction in materials with structural 2D character, i.e. quasi-2D materials. The modulated orbital-dependent potentials are also constructed with non-local screening, multi-layer screening, and finite gap due to the coupling with substrates. We apply the excitonic Hamiltonian in coordinate-space with developed effective electron-hole interacting potentials to compute excitons’ binding strength at M (π band) and Γ (σ band) points in graphene and its associated multi-layer forms. The orbital-dependent potential provides a range-separated property for regulating both long- and short-range interactions. This accounts for the existence of the resonant π exciton in single- and bi-layer graphenes. The remarkable strong electron-hole interaction in σ orbitals plays a decisive role in the existence of σ exciton in graphene stack at room temperature. The interplay between gap-opening and screening from substrates shed a light on the weak dependence of σ exciton binding energy on the thickness of graphene stacks. Moreover, the analysis of non-hydrogenic exciton spectrum in quasi-2D systems clearly demonstrates the remarkable comparable contribution of orbital dependent potential with respect to non-local screening process. The understanding of orbital-dependent potential developed in this work is potentially applicable for a wide range of materials with low dimension. PMID:26610715

First Sampling Hole in Mount Sharp

NASA Image and Video Library

2014-09-25

This image from the Mars Hand Lens Imager MAHLI camera on NASA Curiosity Mars rover shows the first sample-collection hole drilled in Mount Sharp, the layered mountain that is the science destination of the rover extended mission.

Quantum Dot Light-Emitting Devices: Beyond Alignment of Energy Levels

DOE PAGES

Zaiats, Gary; Ikeda, Shingo; Kinge, Sachin; ...

2017-08-25

Multinary semiconductor nanoparticles such as CuInS 2, AgInS 2, and the corresponding alloys with ZnS hold promise for designing future quantum dot light-emitting devices (QLED). The QLED architectures require matching of energy levels between the different electron and hole transport layers. In addition to energy level alignment, conductivity and charge transfer interactions within these layers determine the overall efficiency of QLED. By employing CuInS 2-ZnS QDs we succeeded in fabricating red-emitting QLED using two different hole-transporting materials, polyvinylcarbazole and poly(4- butylphenyldiphenylamine). Despite the similarity of the HOMO-LUMO energy levels of these two hole transport materials, the QLED devices exhibit distinctlymore » different voltage dependence. The difference in onset voltage and excited state interactions shows the complexity involved in selecting the hole transport materials for display devices.« less

Attempting nanolocalization of all-optical switching through nano-holes in an Al-mask

NASA Astrophysics Data System (ADS)

Savoini, M.; Reid, A. H.; Wang, T.; Graves, C. E.; Hoffmann, M. C.; Liu, T.-M.; Tsukamoto, A.; Stöhr, J.; Dürr, H. A.; Kirilyuk, A.; Kimel, A. V.; Rasing, T.

2014-08-01

We investigate the light-induced magnetization reversal in samples of rare-earth transition metal alloys, where we aim to spatially confine the switched region at the nanoscale, with the help of nano-holes in an Al-mask covering the sample. First of all, an optimum multilayer structure is designed for the optimum absorption of the incident light. Next, using finite difference time domain simulations we investigate light penetration through nano-holes of different diameter. We find that the holes of 200 nm diameter combine an optimum transmittance with a localization better than λ/4. Further, we have manufactured samples with the help of focused ion beam milling of Al-capped TbCoFe layers. Finally, employing magnetization-sensitive X-ray holography techniques, we have investigated the magnetization reversal with extremely high resolution. The results show severe processing effects on the switching characteristics of the magnetic layers.

Quantum Dot Light-Emitting Devices: Beyond Alignment of Energy Levels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zaiats, Gary; Ikeda, Shingo; Kinge, Sachin

Multinary semiconductor nanoparticles such as CuInS 2, AgInS 2, and the corresponding alloys with ZnS hold promise for designing future quantum dot light-emitting devices (QLED). The QLED architectures require matching of energy levels between the different electron and hole transport layers. In addition to energy level alignment, conductivity and charge transfer interactions within these layers determine the overall efficiency of QLED. By employing CuInS 2-ZnS QDs we succeeded in fabricating red-emitting QLED using two different hole-transporting materials, polyvinylcarbazole and poly(4- butylphenyldiphenylamine). Despite the similarity of the HOMO-LUMO energy levels of these two hole transport materials, the QLED devices exhibit distinctlymore » different voltage dependence. The difference in onset voltage and excited state interactions shows the complexity involved in selecting the hole transport materials for display devices.« less

Effect of organic small-molecule hole injection materials on the performance of inverted organic solar cells

NASA Astrophysics Data System (ADS)

Li, Jie; Zheng, Yifan; Zheng, Ding; Yu, Junsheng

2016-07-01

In this study, the influence of small-molecule organic hole injection materials on the performance of organic solar cells (OSCs) as the hole transport layer (HTL) with an architecture of ITO/ZnO/P3HT:PC71BM/HTL/Ag has been investigated. A significant enhancement on the performance of OSCs from 1.06% to 2.63% is obtained by using N, N‧-bis(1-naphthalenyl)-N, N‧-bis-phenyl-(1, 1‧-biphenyl)-4, 4‧-diamine (NPB) HTL. Through the resistance simulation and space-charge limited current analysis, we found that NPB HTL cannot merely improve the hole mobility of the device but also form the Ohmic contact between the active layer and anode. Besides, when we apply mix HTL by depositing the NPB on the surface of molybdenum oxide, the power conversion efficiency of OSC are able to be further improved to 2.96%.

Transparent ohmic contacts for solution-processed, ultrathin CdTe solar cells

DOE PAGES

Kurley, J. Matthew; Panthani, Matthew G.; Crisp, Ryan W.; ...

2016-12-19

Recently, solution-processing became a viable route for depositing CdTe for use in photovoltaics. Ultrathin (~500 nm) solar cells have been made using colloidal CdTe nanocrystals with efficiencies exceeding 12% power conversion efficiency (PCE) demonstrated by using very simple device stacks. Further progress requires an effective method for extracting charge carriers generated during light harvesting. Here, we explored solution-based methods for creating transparent Ohmic contacts to the solution-deposited CdTe absorber layer and demonstrated molecular and nanocrystal approaches to Ohmic hole-extracting contacts at the ITO/CdTe interface. Furthermore, we used scanning Kelvin probe microscopy to further show how the above approaches improved carriermore » collection by reducing the potential drop under reverse bias across the ITO/CdTe interface. Other methods, such as spin-coating CdTe/A 2CdTe 2 (A = Na, K, Cs, N 2H 5), can be used in conjunction with current/light soaking to improve PCE further.« less

Distinguishing crystallization stages and their influence on quantum efficiency during perovskite solar cell formation in real-time.

PubMed

Wagner, Lukas; Mundt, Laura E; Mathiazhagan, Gayathri; Mundus, Markus; Schubert, Martin C; Mastroianni, Simone; Würfel, Uli; Hinsch, Andreas; Glunz, Stefan W

2017-11-02

Relating crystallization of the absorber layer in a perovskite solar cell (PSC) to the device performance is a key challenge for the process development and in-depth understanding of these types of high efficient solar cells. A novel approach that enables real-time photo-physical and electrical characterization using a graphite-based PSC is introduced in this work. In our graphite-based PSC, the device architecture of porous monolithic contact layers creates the possibility to perform photovoltaic measurements while the perovskite crystallizes within this scaffold. The kinetics of crystallization in a solution based 2-step formation process has been analyzed by real-time measurement of the external photon to electron quantum efficiency as well as the photoluminescence emission spectra of the solar cell. With this method it was in particular possible to identify a previously overlooked crystallization stage during the formation of the perovskite absorber layer. This stage has significant influence on the development of the photocurrent, which is attributed to the formation of electrical pathways between the electron and hole contact, enabling efficient charge carrier extraction. We observe that in contrast to previously suggested models, the perovskite layer formation is indeed not complete with the end of crystal growth.

Suppressing spontaneous polarization of p-GaN by graphene oxide passivation: Augmented light output of GaN UV-LED

PubMed Central

Jeong, Hyun; Jeong, Seung Yol; Park, Doo Jae; Jeong, Hyeon Jun; Jeong, Sooyeon; Han, Joong Tark; Jeong, Hee Jin; Yang, Sunhye; Kim, Ho Young; Baeg, Kang-Jun; Park, Sae June; Ahn, Yeong Hwan; Suh, Eun-Kyung; Lee, Geon-Woong; Lee, Young Hee; Jeong, Mun Seok

2015-01-01

GaN-based ultraviolet (UV) LEDs are widely used in numerous applications, including white light pump sources and high-density optical data storage. However, one notorious issue is low hole injection rate in p-type transport layer due to poorly activated holes and spontaneous polarization, giving rise to insufficient light emission efficiency. Therefore, improving hole injection rate is a key step towards high performance UV-LEDs. Here, we report a new method of suppressing spontaneous polarization in p-type region to augment light output of UV-LEDs. This was achieved by simply passivating graphene oxide (GO) on top of the fully fabricated LED. The dipole layer formed by the passivated GO enhanced hole injection rate by suppressing spontaneous polarization in p-type region. The homogeneity of electroluminescence intensity in active layers was improved due to band filling effect. As a consequence, the light output was enhanced by 60% in linear current region. Our simple approach of suppressing spontaneous polarization of p-GaN using GO passivation disrupts the current state of the art technology and will be useful for high-efficiency UV-LED technology. PMID:25586148

``Flash'' synthesis of ``giant'' Mn-doped CdS/ZnSe/ZnS nanocrystals with ZnSe layer as hole quantum-well

NASA Astrophysics Data System (ADS)

Xu, Ruilin; Zhang, Jiayu

Usually, exciton-Mn energy transfer in Mn-doped CdS/ZnS nanocrystals (NCs) can readily outcompete the exciton trapping by an order of magnitude. However, with the accumulation of non-radiative defects in the giant shell during the rapid growth of the thick shell (up to ~20 monolayers in no more than 10 minutes), the photoluminescence (PL) quantum yield of this kind of ``giant'' NCs is significantly reduced by the accumulation of non-radiative defects during the rapid growth of thick shell. That is because the exciton-Mn energy transfer in Mn-doped CdS/ZnS NCs is significantly inhibited by the hole trapping as the major competing process, resulting from the insufficient hole-confinement in CdS/ZnS NCs. Accordingly ``flash'' synthesis of giant Mn-doped CdS/ZnSe/ZnS NCs with ZnSe layer as hole quantum-well is developed to suppress the inhibition. Meanwhile Mn2+ PL peak changes profoundly from ~620 nm to ~540 nm after addition of ZnSe layer. Studies are under the way to explore the relevant mechanisms.

Submicron patterned metal hole etching

DOEpatents

McCarthy, Anthony M.; Contolini, Robert J.; Liberman, Vladimir; Morse, Jeffrey

2000-01-01

A wet chemical process for etching submicron patterned holes in thin metal layers using electrochemical etching with the aid of a wetting agent. In this process, the processed wafer to be etched is immersed in a wetting agent, such as methanol, for a few seconds prior to inserting the processed wafer into an electrochemical etching setup, with the wafer maintained horizontal during transfer to maintain a film of methanol covering the patterned areas. The electrochemical etching setup includes a tube which seals the edges of the wafer preventing loss of the methanol. An electrolyte composed of 4:1 water: sulfuric is poured into the tube and the electrolyte replaces the wetting agent in the patterned holes. A working electrode is attached to a metal layer of the wafer, with reference and counter electrodes inserted in the electrolyte with all electrodes connected to a potentiostat. A single pulse on the counter electrode, such as a 100 ms pulse at +10.2 volts, is used to excite the electrochemical circuit and perform the etch. The process produces uniform etching of the patterned holes in the metal layers, such as chromium and molybdenum of the wafer without adversely effecting the patterned mask.

Suppressing spontaneous polarization of p-GaN by graphene oxide passivation: augmented light output of GaN UV-LED.

PubMed

Jeong, Hyun; Jeong, Seung Yol; Park, Doo Jae; Jeong, Hyeon Jun; Jeong, Sooyeon; Han, Joong Tark; Jeong, Hee Jin; Yang, Sunhye; Kim, Ho Young; Baeg, Kang-Jun; Park, Sae June; Ahn, Yeong Hwan; Suh, Eun-Kyung; Lee, Geon-Woong; Lee, Young Hee; Jeong, Mun Seok

2015-01-14

GaN-based ultraviolet (UV) LEDs are widely used in numerous applications, including white light pump sources and high-density optical data storage. However, one notorious issue is low hole injection rate in p-type transport layer due to poorly activated holes and spontaneous polarization, giving rise to insufficient light emission efficiency. Therefore, improving hole injection rate is a key step towards high performance UV-LEDs. Here, we report a new method of suppressing spontaneous polarization in p-type region to augment light output of UV-LEDs. This was achieved by simply passivating graphene oxide (GO) on top of the fully fabricated LED. The dipole layer formed by the passivated GO enhanced hole injection rate by suppressing spontaneous polarization in p-type region. The homogeneity of electroluminescence intensity in active layers was improved due to band filling effect. As a consequence, the light output was enhanced by 60% in linear current region. Our simple approach of suppressing spontaneous polarization of p-GaN using GO passivation disrupts the current state of the art technology and will be useful for high-efficiency UV-LED technology.

Development of nanoimprint lithography templates for the contact hole layer application (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ichimura, Koji; Hikichi, Ryugo; Harada, Saburo; Kanno, Koichi; Kurihara, Masaaki; Hayashi, Naoya

2017-04-01

Nanoimprint lithography, NIL, is gathering much attention as one of the most potential candidates for the next generation lithography for semiconductor. This technology needs no pattern data modification for exposure, simpler exposure system, and single step patterning process without any coat/develop truck, and has potential of cost effective patterning rather than very complex optical lithography and/or EUV lithography. NIL working templates are made by the replication of the EB written high quality master templates. Fabrication of high resolution master templates is one of the most important issues. Since NIL is 1:1 pattern transfer process, master templates have 4 times higher resolution compared with photomasks. Another key is to maintain the quality of the master templates in replication process. NIL process is applied for the template replication and this imprint process determines most of the performance of the replicated templates. Expectations to the NIL are not only high resolution line and spaces but also the contact hole layer application. Conventional ArF-i lithography has a certain limit in size and pitch for contact hole fabrication. On the other hand, NIL has good pattern fidelity for contact hole fabrication at smaller sizes and pitches compared with conventional optical lithography. Regarding the tone of the templates for contact hole, there are the possibilities of both tone, the hole template and the pillar template, depending on the processes of the wafer side. We have succeeded to fabricate both types of templates at 2xnm in size. In this presentation, we will be discussing fabrication or our replica template for the contact hole layer application. Both tone of the template fabrication will be presented as well as the performance of the replica templates. We will also discuss the resolution improvement of the hole master templates by using various e-beam exposure technologies.

Caves in caves: Post depositional holes in stalagmites

NASA Astrophysics Data System (ADS)

Shtober Zisu, Nurit; Schwarcz, Henry P.; Chow, Tom; Konyer, Norman B.; Noseworthy, Michael D.

2010-05-01

Previous studies of speleothems for the purposes of isotopic analysis and U-series dating have resulted in preparation of stalagmites by sectioning longitudinally along the growth axis. We frequently observe holes in such sections, both along the growth axis, and laterally to it, ranging in size up to several mm in diameter. Our initial supposition was that these holes are produced during the growth of the stalagmite under constant dripping conditions, but it was found that two kinds of holes exist within the stalagmites. "Axial holes" were formed syngenetically as is shown by the depression of growth layers into the holes and the persistence of the axial hole over many cm of the growth history. Some cut the active growth surface of the stalagmite. "Off-axis holes" are seen in many stalagmites (as well as stalactites); they cut discordantly through growth layers, and never terminate at a growth surface. They range in size from a few mm to several cm in maximum dimension, and may not be coaxially oriented. They are lined with micron-sized, randomly oriented calcite crystals and under which lies an organic-rich coating. We used CT (Computed Tomography) and MRI (Magnetic Resonance Imaging) scanning in order to locate holes, and to search for water trapped in these macro-inclusions. These methods, allow us to visualize the holes without destruction of the stalagmite, the holes and the surrounding calcite. To our best knowledge, the present paper is the first to combine CT and MRI methods in the study of fluid inclusions in rocks, or in visualizing the distribution of holes in speleothems. CT scans reveal abundant off-axis holes in some speleothems, while most display at least a few holes. MRI scans shows that, in uncut speleothems, these holes never contain water (although Genty et al. [2002] found water-filled holes in some stalagmites). Off-axis holes may be a result of bioerosion, possibly bacterial, followed by partial refilling of the hole with calcite which is prevented from growing epitaxially on the host calcite.

Charge-transport anisotropy in black phosphorus: critical dependence on the number of layers.

PubMed

Banerjee, Swastika; Pati, Swapan K

2016-06-28

Phosphorene is a promising candidate for modern electronics because of the anisotropy associated with high electron-hole mobility. Additionally, superior mechanical flexibility allows the strain-engineering of various properties including the transport of charge carriers in phosphorene. In this work, we have shown the criticality of the number of layers to dictate the transport properties of black phosphorus. Trilayer black phosphorus (TBP) has been proposed as an excellent anisotropic material, based on the transport parameters using Boltzmann transport formalisms coupled with density functional theory. The mobilities of both the electron and the hole are found to be higher along the zigzag direction (∼10(4) cm(2) V(-1) s(-1) at 300 K) compared to the armchair direction (∼10(2) cm(2) V(-1) s(-1)), resulting in the intrinsic directional anisotropy. Application of strain leads to additional electron-hole anisotropy with 10(3) fold higher mobility for the electron compared to the hole. Critical strain for maximum anisotropic response has also been determined. Whether the transport anisotropy is due to the spatial or charge-carrier has been determined through analyses of the scattering process of electrons and holes, and their recombination as well as relaxation dynamics. In this context, we have derived two descriptors (S and F(k)), which are general enough for any 2D or quasi-2D systems. Information on the scattering involving purely the carrier states also helps to understand the layer-dependent photoluminescence and electron (hole) relaxation in black phosphorus. Finally, we justify trilayer black phosphorus (TBP) as the material of interest with excellent transport properties.

Ion extraction capabilities of two-grid accelerator systems. [for spacecraft propulsion

NASA Technical Reports Server (NTRS)

Rovang, D. C.; Wilbur, P. J.

1984-01-01

An experimental investigation into the ion extraction capabilities of two-grid accelerator systems common to electrostatic ion thrusters is described. A large body of experimental data which facilitates the selection of the accelerator system geometries and operating parameters necessary to maximize the extracted ion current is presented. Results suggest that the impingement-limited perveance is not dramatically affected by reductions in screen hole diameter to 0.5 mm. Impingement-limited performance is shown to depend most strongly on grid separation distance, accelerator hole diameter ratio, the discharge-to-total accelerating voltage ratio, and the net-to-total accelerating voltage ratio. Results obtained at small grid separation ratios suggest a new grid operating condition where high beam current per hole levels are achieved at a specified net accelerating voltage. It is shown that this operating condition is realized at an optimum ratio of net-to-total accelerating voltage ratio which is typically quite high.

Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belhadj, T.; Amand, T.; Kunz, S.

2010-08-02

We report strong heavy hole-light hole mixing in GaAs quantum dots grown by droplet epitaxy. Using the neutral and charged exciton emission as a monitor we observe the direct consequence of quantum dot symmetry reduction in this strain free system. By fitting the polar diagram of the emission with simple analytical expressions obtained from k{center_dot}p theory we are able to extract the mixing that arises from the heavy-light hole coupling due to the geometrical asymmetry of the quantum dot.

Time-of-flight Measurement Of Hole-tunneling Properties And Emission Color Control In Organic Light-emitting Diodes

NASA Astrophysics Data System (ADS)

Kurata, K.; Kashiwabara, K.; Nakajima, K.; Mizoguchi, Y.; Ohtani, N.

2011-12-01

Hole transport properties of organic light-emitting diodes (OLEDs) with a thin hole-blocking layer (HBL) were evaluated by time-of-flight measurement. Electroluminescence (EL) spectra of OLEDs with various HBL thicknesses were also evaluated. The results clearly show that the time-resolved photocurrent response and the emission color strongly depend on HBL thickness. This can be attributed to hole-tunneling through the thin HBL. We successfully fabricated a white OLED by controlling the thickness of HBL.

Influence of confinement layers in the emitting layer of the blue phosphorescent organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Ji, Chang-Yan; Gu, Zheng-Tian; Kou, Zhi-Qi

2016-10-01

The electrical and optical properties of the blue phosphorescent organic light-emitting diodes (PHOLEDs) can be affected by the various structure of confinement layer in the emitting layer (EML). A series of devices with different electron or hole confinement layer (TCTA or Bphen) are fabricated, it is more effective to balance charge carriers injection for the device with the double electron confinement layers structure, the power efficiency and luminance can reach 17.7 lm/W (at 103 cd/m2) and 3536 cd/m2 (at 8 V). In case of the same double electron confinement layers, another series of devices with different profile of EML are fabricated by changing the confinement layers position, the power efficiency and luminance can be improved to 21.7 lm/W (at 103 cd/m2) and 7674 cd/m2 (at 8 V) when the thickness of EML separated by confinement layers increases gradually from the hole injection side to the electron injection side, the driving voltage can also be reduced.

Analgesic, neuropharmacological, anti-diarrheal, and cytotoxic activities of the extract of Solanum sisymbriifolium (Lam.) leaves

PubMed Central

Apu, Apurba Sarker; Bhuyan, Shakhawat Hossan; Matin, Maima; Hossain, Faruq; Khatun, Farjana; Taiab, Abu; Jamaluddin

2013-01-01

Objective: The present study was undertaken to evaluate the possible analgesic, neuropharmacological, anti-diarrheal, and cytotoxic activities of the ethanol extract of leaves of Solanum sisymbriifolium Lam. (Family: Solanaceae). Materials and Methods: The analgesic activity was measured by acetic acid-induced writhing inhibition test. The neuropharmacological activities were evaluated using hole cross, hole board, and elevated plus-maze test and the anti-diarrheal activity was assessed using castor oil-induced diarrhea inhibition method. Brine shrimp lethality bioassay was carried out for assessing the cytotoxicity of the ethanol extract of the leaves. Except cytotoxic activity, all the tests were conducted on mice. Results: The extract at oral doses of 200 and 400 mg/kg body weight showed highly significant (p<0.001) decrease in number of writhing, 52.1±0.66 and 4.4±0.64 compared with the control (78.6±0.29) with the percentage of inhibitions of writhing response were found to be 33.72% and 94.40%, respectively. Compare with the control, the extract at both doses showed significant sedative effect in hole cross test. In hole board test, the extract exhibited highly significant (p<0.001) anxiolytic activity at dose of (200 mg/kg), while the same activity was observed at dose of 400 mg/kg in elevated plus-maze test. The extract showed highly significant (p<0.001) anti-diarrheal activity in a dose-dependent manner. With the extract, significant lethality to brine shrimp was found with LC50 value of 61.66±0.9 μg/ml, which was comparable with the positive control (LC50: 11.89±0.8 µg/ml). Conclusion: The results from the present studies support the traditional uses of this plant part and could form the basis of further investigation including compound isolation. PMID:25050287

Long-term individual recovery for the IRAS mission

NASA Technical Reports Server (NTRS)

Lau, C. O.; Wolff, D. M.

1984-01-01

IRAS (Infrared Astronomical Satellite) was launched on January 25, 1983 with the primary purpose of performing an infrared survey of the entire celestial sphere. Holes were left in the main survey when some areas received less than the minimum 2-layer coverage. A second survey filled in many of these holes; however, many still required long-term individual recovery. The result was a smooth survey with 96 percent of the sky covered to the desired depth of 2 or more layers.

Low-temperature solution-processed hydrogen molybdenum and vanadium bronzes for an efficient hole-transport layer in organic electronics.

PubMed

Xie, Fengxian; Choy, Wallace C H; Wang, Chuandao; Li, Xinchen; Zhang, Shaoqing; Hou, Jianhui

2013-04-11

A simple one-step method is reported to synthesize low-temperature solution-processed transition metal oxides (TMOs) of molybdenum oxide and vanadium oxide with oxygen vacancies for a good hole-transport layer (HTL). The oxygen vacancy plays an essential role for TMOs when they are employed as HTLs: TMO films with excess oxygen are highly undesirable for their application in organic electronics. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hole-transport limited S-shaped I-V curves in planar heterojunction organic photovoltaic cells

NASA Astrophysics Data System (ADS)

Zhang, Minlu; Wang, Hui; Tang, C. W.

2011-11-01

Current-voltage (I-V) characteristics of planar heterojunction organic photovoltaic cells based on N',N'-Di-[(1-naphthyl)-N',N'-diphenyl]-1,1'-biphenyl)-4,4'-diamine (NPB) and C60 are investigated. Through variation of the layer thickness and composition, specifically chemical doping NPB with MoOx, we show that the hole-transport limitation in the NPB layer is the determining factor in shaping the I-V characteristics of NPB/C60 cells.

Boosting jet power in black hole spacetimes.

PubMed

Neilsen, David; Lehner, Luis; Palenzuela, Carlos; Hirschmann, Eric W; Liebling, Steven L; Motl, Patrick M; Garrett, Travis

2011-08-02

The extraction of rotational energy from a spinning black hole via the Blandford-Znajek mechanism has long been understood as an important component in models to explain energetic jets from compact astrophysical sources. Here we show more generally that the kinetic energy of the black hole, both rotational and translational, can be tapped, thereby producing even more luminous jets powered by the interaction of the black hole with its surrounding plasma. We study the resulting Poynting jet that arises from single boosted black holes and binary black hole systems. In the latter case, we find that increasing the orbital angular momenta of the system and/or the spins of the individual black holes results in an enhanced Poynting flux.

Balancing high gain and bandwidth in multilayer organic photodetectors with tailored carrier blocking layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hammond, William T.; Mudrick, John P.; Xue, Jiangeng, E-mail: jxue@mse.ufl.edu

2014-12-07

We present detailed studies of the high photocurrent gain behavior in multilayer organic photodiodes containing tailored carrier blocking layers we reported earlier in a Letter [W. T. Hammond and J. Xue, Appl. Phys. Lett. 97, 073302 (2010)], in which a high photocurrent gain of up to 500 was attributed to the accumulation of photogenerated holes at the anode/organic active layer interface and the subsequent drastic increase in secondary electron injection from the anode. Here, we show that both the hole-blocking layer structure and layer thickness strongly influence the magnitude of the photocurrent gain. Temporal studies revealed that the frequency responsemore » of such devices is limited by three different processes with lifetimes of 10 μs, 202 μs, and 2.72 ms for the removal of confined holes, which limit the 3 dB bandwidth of these devices to 1.4 kHz. Furthermore, the composition in the mixed organic donor-acceptor photoactive layer affects both gain and bandwidth, which is attributed to the varying charge transport characteristics, and the optimal gain-bandwidth product is achieved with approximately 30% donor content. Finally, these devices show a high dynamic range of more than seven orders of magnitude, although the photocurrent shows a sublinear dependence on the incident optical power.« less

Microchannel heat sink assembly

DOEpatents

Bonde, Wayne L.; Contolini, Robert J.

1992-01-01

The present invention provides a microchannel heat sink with a thermal range from cryogenic temperatures to several hundred degrees centigrade. The heat sink can be used with a variety of fluids, such as cryogenic or corrosive fluids, and can be operated at a high pressure. The heat sink comprises a microchannel layer preferably formed of silicon, and a manifold layer preferably formed of glass. The manifold layer comprises an inlet groove and outlet groove which define an inlet manifold and an outlet manifold. The inlet manifold delivers coolant to the inlet section of the microchannels, and the outlet manifold receives coolant from the outlet section of the microchannels. In one embodiment, the manifold layer comprises an inlet hole extending through the manifold layer to the inlet manifold, and an outlet hole extending through the manifold layer to the outlet manifold. Coolant is supplied to the heat sink through a conduit assembly connected to the heat sink. A resilient seal, such as a gasket or an O-ring, is disposed between the conduit and the hole in the heat sink in order to provide a watetight seal. In other embodiments, the conduit assembly may comprise a metal tube which is connected to the heat sink by a soft solder. In still other embodiments, the heat sink may comprise inlet and outlet nipples. The present invention has application in supercomputers, integrated circuits and other electronic devices, and is suitable for cooling materials to superconducting temperatures.

A hole accelerator for InGaN/GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-10-01

The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

Performance enhancement of perovskite solar cells with Mg-doped TiO{sub 2} compact film as the hole-blocking layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jing; Qin, Minchao; Tao, Hong

2015-03-23

In this letter, we report perovskite solar cells with thin dense Mg-doped TiO{sub 2} as hole-blocking layers (HBLs), which outperform cells using TiO{sub 2} HBLs in several ways: higher open-circuit voltage (V{sub oc}) (1.08 V), power conversion efficiency (12.28%), short-circuit current, and fill factor. These properties improvements are attributed to the better properties of Mg-modulated TiO{sub 2} as compared to TiO{sub 2} such as better optical transmission properties, upshifted conduction band minimum (CBM) and downshifted valence band maximum (VBM), better hole-blocking effect, and higher electron life time. The higher-lying CBM due to the modulation with wider band gap MgO and themore » formation of magnesium oxide and magnesium hydroxides together resulted in an increment of V{sub oc}. In addition, the Mg-modulated TiO{sub 2} with lower VBM played a better role in the hole-blocking. The HBL with modulated band position provided better electron transport and hole blocking effects within the device.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Hyunbok; Lee, Jeihyun; Yi, Yeonjin, E-mail: yeonjin@yonsei.ac.kr

Metal phthalocyanines (MPcs) are well known as an efficient hole injection layer (HIL) in organic devices. They possess a low ionization energy, and so the low-lying highest occupied molecular orbital (HOMO) gives a small hole injection barrier from an anode in organic light-emitting diodes. However, in this study, we show that the hole injection characteristics of MPc are not only determined by the HOMO position but also significantly affected by the wave function distribution of the HOMO. We show that even with the HOMO level of a manganese phthalocyanine (MnPc) HIL located between the Fermi level of an indium tinmore » oxide anode and the HOMO level of a N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine hole transport layer the device performance with the MnPc HIL is rather deteriorated. This anomalous hole injection deterioration is due to the contracted HOMO wave function, which leads to small intermolecular electronic coupling. The origin of this contraction is the significant contribution of the Mn d-orbital to the MnPc HOMO.« less

Lifetime improvement mechanism in organic light-emitting diodes with mixed materials at a heterojunction interface

NASA Astrophysics Data System (ADS)

Minagawa, Masahiro; Takahashi, Noriko

2016-02-01

To investigate the lifetime improvement mechanism caused by mixing at the heterojunction interface, organic light-emitting diodes (OLEDs) with stacked and mixed 4,4‧-bis[N-(1-naphthyl)-N-phenyl-amino]-biphenyl (α-NPD)/tris(8-hydroxyquinoline)aluminum (Alq3) interfaces were fabricated, and changes in their displacement current due to continuous operation were measured. A decrease in accumulated holes at the α-NPD/Alq3 interface was observed in the stacked configuration devices over longer operations. These results indicate that the injected hole density was reduced during continuous operation, implying that the carrier balance became uneven in the emission region. However, few accumulated holes and changes in the displacement current due to continuous operation were observed in the devices having the mixed layer. Therefore, it was deduced that the number of holes concentrated between the α-NPD and Alq3 layers was decreased by mixing at the heterojunction interface, and that the change in the number of holes was smaller during continuous operation, resulting in less degradation.

Experimental investigation on the spiral trepanning of K24 superalloy with femtosecond laser

NASA Astrophysics Data System (ADS)

Wang, Maolu; Yang, Lijun; Zhang, Shuai; Wang, Yang

2018-05-01

Film cooling holes are crucial for improving the performance of the aviation engine. In the paper, the processing of the film cooling holes on K24 superalloy by femtosecond laser is investigated. By comparing the three different drilling methods, the spiral trepanning method is chosen, and all the drilling experiments are carried out in this way. The experimental results show that the drilling of femtosecond laser pulses has distinct merits against that of the traditional long pulse laser, which can realize the "cold" processing with less recasting layer and less crack. The influence of each process parameter on roundness and taper, which are the important parameters to measure the quality of holes, is analyzed in detail, and the method to decrease it is proposed. To further reduce the recasting layer, the processing quality of the inner wall of the micro hole is investigated by scanning electron microscopy (SEM) equipped with energy disperse spectroscopy (EDS), the mechanism of the femtosecond laser interaction with K24 superalloy is further revealed. The investigation to the film hole machining by femtosecond laser has important practical significance.

Gate field plate IGBT with trench accumulation layer for extreme injection enhancement

NASA Astrophysics Data System (ADS)

Xu, Xiaorui; Chen, Wanjun; Liu, Chao; Chen, Nan; Tao, Hong; Shi, Yijun; Ma, Yinchang; Zhou, Qi; Zhang, Bo

2017-04-01

A gate field plate IGBT (GFP-IGBT) with extreme injection enhancement is proposed and verified using TCAD simulations. The GFP-IGBT features a gate field plate (GFP) inserted into n-drift region directly and a tiny P-base region separated from the GFP. In the ON-state, the accumulation layer is formed near to not only the bottom but also the side of the trench, which enhances electron injection efficiency. And the tiny P-base region reduces the holes extracted by reverse-biased P-base/N-drift junction. Both the GFP and tiny P-base contribute to achieving extreme injection enhancement, leading to a low forward voltage drop. In the OFF-state, due to the low stored charges in N-buffer layer, GFP-IGBT shows a short current fall time, leading to a decrease of turn-off loss. The simulation results show that, compared with the conventional IGBT, the GFP-IGBT offers a forward voltage drop reduction of 25% or current fall time reduction of 89% (i.e. turn-off loss reduction of 53%), resulting in low power loss. The excellent device performance, coupled with a commercial IGBT-compatible fabrication process, makes the proposed GFP-IGBT a promising candidate for power switching applications.

How to Plant Apple Trees to Reduce Replant Disease in Apple Orchard: A Study on the Phenolic Acid of the Replanted Apple Orchard

PubMed Central

Yin, Chengmiao; Xiang, Li; Wang, Gongshuai; Wang, Yanfang; Shen, Xiang; Chen, Xuesen; Mao, Zhiquan

2016-01-01

Apple replant disease (ARD) is an important problem in the production of apple. The phenolic acid is one of the causes of ARD. How phenolic acid affects the ARD was not well known. In this study, we analyzed the type, concentration and annual dynamic variation of phenolic acid in soil from three replanted apple orchards using an accelerated solvent extraction system with high performance liquid chromatography (ASE-HPLC). We found that the type and concentration of phenolic acid were significantly differed among different seasons, different sampling positions and different soil layers. Major types of phenolic acid in three replanted apple orchards were phlorizin, benzoic acid and vanillic aldehyde. The concentration of phenolic acid was highest in the soil of the previous tree holes and it was increased from the spring to autumn. Moreover, phenolic acid was primarily distributed in 30–60 cm soil layer in the autumn, while it was most abundant in 0–30 cm soil layer in the spring. Our results suggest that phlorizin, benzoic acid and vanillic aldehyde may be the key phenolic acid that brought about ARD in the replanted apple orchard. PMID:27907081

Electromagnetic jets from stars and black holes

NASA Astrophysics Data System (ADS)

Gralla, Samuel E.; Lupsasca, Alexandru; Rodriguez, Maria J.

2016-02-01

We present analytic force-free solutions modeling rotating stars and black holes immersed in the magnetic field of a thin disk that terminates at an inner radius. The solutions are exact in flat spacetime and approximate in Kerr spacetime. The compact object produces a conical jet whose properties carry information about its nature. For example, the jet from a star is surrounded by a current sheet, while that of a black hole is smooth. We compute an effective resistance in each case and compare to the canonical values used in circuit models of energy extraction. These solutions illustrate all of the basic features of the Blandford-Znajek process for energy extraction and jet formation in a clean setting.

Infrared absorption and admittance spectroscopy of Ge quantum dots on a strained SiGe layer

NASA Astrophysics Data System (ADS)

Yakimov, A. I.; Nikiforov, A. I.; Timofeev, V. A.; Dvurechenskii, A. V.

2011-12-01

A combined infrared absorption and admittance spectroscopy is carried out in examining the energy level structure and the hole emission process in self-assembled Ge quantum dots (QDs) placed on a strained Si0.65Ge0.35 quantum well (QW), which, in turn, is incorporated in a Si matrix. In the midinfrared spectral range, the dots exhibit three dominant absorption bands peaked at 130, 250 and 390 meV. By a comparison between absorption measurements and six-band {\\bf k}\\;{\\bm \\cdot}\\;{\\bf p} calculations, the long-wave (~130 meV) resonance is attributed to a transition from the QD hole ground state to the two-dimensional heavy-hole states confined in the Si0.65Ge0.35 layer. The mid-wave absorption band around 390 meV is ascribed to a transition from the QD hole ground state to the three-dimensional continuum states of the Si matrix. An equivalent absorption cross section for these two types of transitions is determined to be 1.2 × 10-15 cm2 and 1.2 × 10-16 cm2, respectively. The origin of the transmission minimum around 250 meV is more ambiguous. We tentatively propose that it can be due to transition either from the highest heavy-hole subband of the Si0.65Ge0.35 QW to continuum states above the Si barrier or from the dot states to the light-hole and split-off subbands of the Si0.65Ge0.35 layer. The photoinduced bleaching of the near-infrared absorption is detected under interband optical excitation of undoped samples. This finding is explained by blocking the interband transitions inside the dots due to the state filling effect. By using the admittance spectroscopy, the mechanism of hole escape from QDs in the presence of an ac vertical electric field is identified. A thermally activated emission from the QD ground state into the two-dimensional states of the Si0.65Ge0.35 well is observed. From the temperature- and frequency-dependent measurements the QD hole ground state is determined to be located ~160 meV below the heavy-hole subband of the Si0.65Ge0.35 layer in good agreement with the results obtained by infrared absorption spectroscopy and six-band {\\bf k}\\;{\\bm \\cdot}\\;{\\bf p} theory. The information acquired from our experimental observations is valuable for feasible device applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

J. M. Rafi; Lynn, D.; Pellegrini, G.

The radiation hardness and thermal stability of the electrical characteristics of atomic layer deposited Al 2O 3 layers to be used as passivation films for silicon radiation detectors with slim edges are investigated. To directly measure the interface charge and to evaluate its change with the ionizing dose, metal-oxide-silicon (MOS) capacitors implementing differently processed Al 2O 3 layers were fabricated on p-type silicon substrates. Qualitatively similar results are obtained for degradation of capacitance–voltage and current–voltage characteristics under gamma and proton irradiations up to equivalent doses of 30 Mrad and 21.07 Mrad, respectively. While similar negative charge densities are initially extractedmore » for all non-irradiated capacitors, superior radiation hardness is obtained for MOS structures with alumina layers grown with H 2O instead of O 3 as oxidant precursor. Competing effects between radiation-induced positive charge trapping and hydrogen release from the H 2O-grown Al 2O 3 layers may explain their higher radiation resistance. Finally, irradiated and non-irradiated MOS capacitors with differently processed Al 2O 3 layers have been subjected to thermal treatments in air at temperatures ranging between 100 °C and 200 °C and the thermal stability of their electrical characteristics has been evaluated. Partial recovery of the gamma-induced degradation has been noticed for O 3-grown MOS structures. Lastly, this can be explained by a trapped holes emission process, for which an activation energy of 1.38 ± 0.15 eV has been extracted.« less

The spinning Kerr-black-hole-mirror bomb: A lower bound on the radius of the reflecting mirror

NASA Astrophysics Data System (ADS)

Hod, Shahar

2016-10-01

The intriguing superradiant amplification phenomenon allows an orbiting scalar field to extract rotational energy from a spinning Kerr black hole. Interestingly, the energy extraction rate can grow exponentially in time if the black-hole-field system is placed inside a reflecting mirror which prevents the field from radiating its energy to infinity. This composed Kerr-black-hole-scalar-field-mirror system, first designed by Press and Teukolsky, has attracted the attention of physicists over the last four decades. Previous numerical studies of this spinning black-hole bomb have revealed the interesting fact that the superradiant instability shuts down if the reflecting mirror is placed too close to the black-hole horizon. In the present study we use analytical techniques to explore the superradiant instability regime of this composed Kerr-black-hole-linearized-scalar-field-mirror system. In particular, it is proved that the lower bound rm/r+ >1/2 (√{ 1 +8M/r- } - 1) provides a necessary condition for the development of the exponentially growing superradiant instabilities in this composed physical system, where rm is the radius of the confining mirror and r± are the horizon radii of the spinning Kerr black hole. We further show that, in the linearized regime, this analytically derived lower bound on the radius of the confining mirror agrees with direct numerical computations of the superradiant instability spectrum which characterizes the spinning black-hole-mirror bomb.

Effect of coating material on heat transfer and skin friction due to impinging jet onto a laser producedhole

NASA Astrophysics Data System (ADS)

Shuja, S. Z.; Yilbas, B. S.

2013-07-01

Jet impingement onto a two-layer structured hole in relation to laser drilling is investigated. The hole consists of a coating layer and a base material. The variations in the Nusselt number and the skin friction are predicted for various coating materials. The Reynolds stress turbulent model is incorporated to account for the turbulence effect of the jet flow and nitrogen is used as the working fluid. The study is extended to include two jet velocities emanating from the conical nozzle. It is found that coating material has significant effect on the Nusselt number variation along the hole wall. In addition, the skin friction varies considerably along the coating thickness in thehole.

Protecting the surface of a light absorber in a photoanode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Shu; Lewis, Nathan S.

A photoanode includes a passivation layer on a light absorber. The passivation layer is more resistant to corrosion than the light absorber. The photoanode includes a surface modifying layer that is location on the passivation layer such that the passivation layer is between the light absorber and the surface modifying layer. The surface modifying layer reduces a resistance of the passivation layer to conduction of holes out of the passivation layer.

Improved performance of organic solar cells with solution processed hole transport layer

NASA Astrophysics Data System (ADS)

Bhargav, Ranoo; Gairola, S. P.; Patra, Asit; Naqvi, Samya; Dhawan, S. K.

2018-06-01

This work is based on Cobalt Oxide as solution processed, inexpensive and effective hole transport layer (HTL) for efficient organic photovoltaic applications (OPVs). In Organic solar cell (OSC) devices ITO coated glass substrate used as a transparent anode electrode for light incident, HTL material Co3O4 dissolve in DMF solvent deposited on anode electrode, after that active layer material (donor/acceptor) deposited on to HTL and finally Al were deposited by thermal evaporation used as cathode electrode. These devices were fabricated with PCDTBT well known low band gap donor material in OSCs and blended with PC71BM as an acceptor material using simplest device structure ITO/Co3O4/active layer/Al at ambient conditions. The power conversion efficiencies (PCEs) based on Co3O4 and PEDOT:PSS have been achieved to up to 3.21% and 1.47% with PCDTBT respectively. In this study we reported that the devices fabricated with Co3O4 showed better performance as compare to the devices fabricated with well known and most studied solution processed HTL material PEDOT:PSS under identical environmental conditions. The surface morphology of the HTL film was characterized by (AFM). Lastly, we have provided Co3O4 as an efficient hole transport material HTL for solution processed organic photovoltaic applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Li-Jen

The project has accomplished the following achievements including the goals outlined in the original proposal. Generation and measurements of Debye-scale electron holes in laboratory: We have generated by beam injections electron solitary waves in the LAPD experiments. The measurements were made possible by the fabrication of the state-of-the-art microprobes at UCLA to measure Debye-scale electric fields [Chiang et al., 2011]. We obtained a result that challenged the state of knowledge about electron hole generation. We found that the electron holes were not due to two-stream instability, but generated by a current-driven instability that also generated whistler-mode waves [Lefebvre et al.,more » 2011, 2010b]. Most of the grant supported a young research scientist Bertrand Lefebvre who led the dissemination of the laboratory experimental results. In addition to two publications, our work relevant to the laboratory experiments on electron holes has resulted in 7 invited talks [Chen, 2007, 2009; Pickett et al., 2009a; Lefebvre et al., 2010a; Pickett et al., 2010; Chen et al., 2011c, b] (including those given by the co-I Jolene Pickett) and 2 contributed talks [Lefebvre et al., 2009b, a]. Discovery of elecctron phase-space-hole structure in the reconnection electron layer: Our theoretical analyses and simulations under this project led to the discovery of an inversion electric field layer whose phase-space signature is an electron hole within the electron diffusion layer in 2D anti-parallel reconnection [Chen et al., 2011a]. We carried out particle tracing studies to understand the electron orbits that result in the phase-space hole structure. Most importantly, we showed that the current density in the electron layer is limited in collisionless reconnection with negligible guide field by the cyclotron turning of meandering electrons. Comparison of electrostatic solitary waves in current layers observed by Cluster and in LAPD: We compared the ESWs observed in a supersubstorm by the Cluster spacecraft and those measured in LAPD. One of the similarities in the characteristics of ESWs observed in space and in LAPD is that the time duration tends to be approximately the inverse of the electron plasma frequency [Pickett et al., 2009b]. Discovery of suprathermal electron bursts inside a series of magnetic islands: Our effort in examining the roles of ESWs in reconnection current layers resulted in the serendipitous discovery that was published in Nature Physics. In earth’s magnetosphere, we observed through the measurements from the four Cluster spacecraft, a series of magnetic islands and suprathermal electron bursts within the islands. The islands were identified to be effectively acceleration sites for electrons [Chen et al., 2008, 2009].« less

Ion extraction capabilities of closely spaced grids

NASA Technical Reports Server (NTRS)

Rovang, D. C.; Wilbur, P. J.

1982-01-01

The ion extraction capabilities of accelerator systems with small screen hole diameters (less than 2.0 mm) are investigated at net-accelerating voltages of 100, 300, and 500 V. Results show that the impingement-limited perveance is not dramatically affected by reductions in screen hole diameter to 1.0 mm, but impingement-limited performance was found to be dependent on the grid separation distance, the discharge-to-total accelerating voltage ratio, and the net-to-total accelerating voltage ratio. Results obtained using small hole diameters and closely spaced grids indicate a new mode of grid operation where high current density operation can be achieved with a specified net acceleration voltage by operating the grids at a high rather than low net-to-total acceleration voltage. Beam current densities as high as 25 mA/sq cm were obtained using grids with 1.0 mm diameter holes operating at a net accelerating voltage of 500 V.

On Born approximation in black hole scattering

NASA Astrophysics Data System (ADS)

Batic, D.; Kelkar, N. G.; Nowakowski, M.

2011-12-01

A massless field propagating on spherically symmetric black hole metrics such as the Schwarzschild, Reissner-Nordström and Reissner-Nordström-de Sitter backgrounds is considered. In particular, explicit formulae in terms of transcendental functions for the scattering of massless scalar particles off black holes are derived within a Born approximation. It is shown that the conditions on the existence of the Born integral forbid a straightforward extraction of the quasi normal modes using the Born approximation for the scattering amplitude. Such a method has been used in literature. We suggest a novel, well defined method, to extract the large imaginary part of quasinormal modes via the Coulomb-like phase shift. Furthermore, we compare the numerically evaluated exact scattering amplitude with the Born one to find that the approximation is not very useful for the scattering of massless scalar, electromagnetic as well as gravitational waves from black holes.

Highly efficient phosphorescence from organic light-emitting devices with an exciton-block layer

NASA Astrophysics Data System (ADS)

Ikai, Masamichi; Tokito, Shizuo; Sakamoto, Youichi; Suzuki, Toshiyasu; Taga, Yasunori

2001-07-01

One of the keys to highly efficient phosphorescent emission in organic light-emitting devices is to confine triplet excitons generated within the emitting layer. We employ "starburst" perfluorinated phenylenes (C60F42) as a both hole- and exciton-block layer, and a hole-transport material 4,4',4″-tri(N-carbazolyl) triphenylamine as a host for the phosphorescent dopant dye in the emitting layer. A maximum external quantum efficiency reaches to 19.2%, and keeps over 15% even at high current densities of 10-20 mA/cm2, providing several times the brightness of fluorescent tubes for lighting. The onset voltage of the electroluminescence is as low as 2.4 V and the peak power efficiency is 70-72 lm/W, promising for low-power display devices.

Layer-dependent quantum cooperation of electron and hole states in the anomalous semimetal WTe 2

DOE PAGES

Das, Pranab Kumar; Di Sante, D.; Vobornik, I.; ...

2016-02-29

The behaviour of electrons and holes in a crystal lattice is a fundamental quantum phenomenon, accounting for a rich variety of material properties. Boosted by the remarkable electronic and physical properties of two-dimensional materials such as graphene and topological insulators, transition metal dichalcogenides have recently received renewed attention. In this context, the anomalous bulk properties of semimetallic WTe 2 have attracted considerable interest. We report angle- and spin-resolved photoemission spectroscopy of WTe 2 single crystals, through which we disentangle the role of W and Te atoms in the formation of the band structure and identify the interplay of charge, spinmore » and orbital degrees of freedom. Supported by first-principles calculations and high-resolution surface topography, we also reveal the existence of a layer-dependent behaviour. The balance of electron and hole states is found only when considering at least three Te–W–Te layers, showing that the behaviour of WTe 2 is not strictly two dimensional.« less

Investigation of atomic-layer-deposited TiO x as selective electron and hole contacts to crystalline silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matsui, Takuya; Bivour, Martin; Ndione, Paul F.

Here, the applicability of atomic-layer-deposited titanium oxide (TiO x) thin films for the formation of carrier selective contacts to crystalline silicon (c-Si) is investigated. While relatively good electron selectivity was presented recently by other groups, we show that carrier selectivity can be engineered from electron to hole selective depending on the deposition conditions, post deposition annealing and the contact material covering the TiOx layer. For both the electron and hole contacts, an open-circuit voltage (Voc) of ~ >650 mV is obtained. The fact that the Voc is correlated with the (asymmetric) induced c-Si band bending suggests that carrier selectivity ismore » mainly governed by the effective work function and/or the fixed charge rather than by the asymmetric band offsets at the Si/TiOx interface, which provides important insight into the basic function of metal-oxide-based contact systems.« less

Investigation of atomic-layer-deposited TiO x as selective electron and hole contacts to crystalline silicon

DOE PAGES

Matsui, Takuya; Bivour, Martin; Ndione, Paul F.; ...

2017-09-21

Here, the applicability of atomic-layer-deposited titanium oxide (TiO x) thin films for the formation of carrier selective contacts to crystalline silicon (c-Si) is investigated. While relatively good electron selectivity was presented recently by other groups, we show that carrier selectivity can be engineered from electron to hole selective depending on the deposition conditions, post deposition annealing and the contact material covering the TiOx layer. For both the electron and hole contacts, an open-circuit voltage (Voc) of ~ >650 mV is obtained. The fact that the Voc is correlated with the (asymmetric) induced c-Si band bending suggests that carrier selectivity ismore » mainly governed by the effective work function and/or the fixed charge rather than by the asymmetric band offsets at the Si/TiOx interface, which provides important insight into the basic function of metal-oxide-based contact systems.« less

Multilayer organic based structures with enhanced hole transport

NASA Astrophysics Data System (ADS)

Mladenova, D.; Sinigersky, V.; Budurova, D.; Dobreva, T.; Karashanova, D.; Dimov, D.; Zhivkov, I.

2010-11-01

Multilayer Organic Based Devices (OBDs) were constructed by subsequent casting of organic films (from polymers, soluble in the same organic solvent). The problem with dissolution of the underlying layer was avoided by using electrophoretic deposition technique. Optimized conditions for electrophoretic deposition (EPD) of thin films with homogeneous and smooth surfaces, as confirmed by SEM, were found. The EPD, carried out at constant current, requires continuous increase of the voltage between the electrodes. In this way the decreased deposition rate caused by the decreased concentration of the material in the suspension and the increased thickness of the film deposited is compensated. The SEM images and the current voltage characteristics recorded, show that the hole transport polyvinylcarbazole (PVK) underlayer survive the treatment with the suspension used for the electrophoretic deposition of the active poly[2-methoxy-5-(3,7-dimethyloctyloxy)-1,4-phenylene vinylene] electroluminescent layer. The PVK hole transport layer increases the device current, as confirmed by the current-voltage measurements. The results obtained demonstrate the possibility of OBDs preparation for electroluminescent and photovoltaic applications.

Probing Photoexcited Carriers in a Few-Layer MoS2 Laminate by Time-Resolved Optical Pump-Terahertz Probe Spectroscopy.

PubMed

Kar, Srabani; Su, Y; Nair, R R; Sood, A K

2015-12-22

We report the dynamics of photoinduced carriers in a free-standing MoS2 laminate consisting of a few layers (1-6 layers) using time-resolved optical pump-terahertz probe spectroscopy. Upon photoexcitation with the 800 nm pump pulse, the terahertz conductivity increases due to absorption by the photoinduced charge carriers. The relaxation of the non-equilibrium carriers shows fast as well as slow decay channels, analyzed using a rate equation model incorporating defect-assisted Auger scattering of photoexcited electrons, holes, and excitons. The fast relaxation time occurs due to the capture of electrons and holes by defects via Auger processes, resulting in nonradiative recombination. The slower relaxation arises since the excitons are bound to the defects, preventing the defect-assisted Auger recombination of the electrons and the holes. Our results provide a comprehensive understanding of the non-equilibrium carrier kinetics in a system of unscreened Coulomb interactions, where defect-assisted Auger processes dominate and should be applicable to other 2D systems.

Modulating Hole Transport in Multilayered Photocathodes with Derivatized p-Type Nickel Oxide and Molecular Assemblies for Solar-Driven Water Splitting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shan, Bing; Sherman, Benjamin D.; Klug, Christina M.

2017-08-31

We report here a new photocathode composed of a bi-layered doped NiO film topped by a macro-mesoporous ITO (ioITO) layer with molecular assemblies attached to the ioITO surface. The NiO film containing a 2% K+ doped NiO inner layer and a 2% Cu2+ doped NiO outer layer provides sufficient driving force for hole transport after injection to NiO by the molecular assembly. The tri-layered oxide, NiK0.02O | NiCu0.02O | ioITO, sensitized by a ruthenium polypyridyl dye and functionalized with a nickel-based hydrogen evolution catalyst, outperforms its counterpart, NiO | NiO | ioITO, in photocatalytic hydrogen evolution from water over amore » period of several hours with a Faradaic yield of ~90%.« less

Antarctic Ozone Hole, 2000

NASA Technical Reports Server (NTRS)

2002-01-01

Each spring the ozone layer over Antarctica nearly disappears, forming a 'hole' over the entire continent. The hole is created by the interaction of some man-made chemicals-freon, for example-with Antarctica's unique weather patterns and extremely cold temperatures. Ozone in the stratosphere absorbs ultraviolet radiation from the sun, thereby protecting living things. Since the ozone hole was discovered many of the chemicals that destroy ozone have been banned, but they will remain in the atmosphere for decades. In 2000, the ozone hole grew quicker than usual and exceptionally large. By the first week in September the hole was the largest ever-11.4 million square miles. The top image shows the average total column ozone values over Antarctica for September 2000. (Total column ozone is the amount of ozone from the ground to the top of the atmosphere. A relatively typical measurement of 300 Dobson Units is equivalent to a layer of ozone 0.12 inches thick on the Earth's surface. Levels below 220 Dobson Units are considered to be significant ozone depletion.) The record-breaking hole is likely the result of lower than average ozone levels during the Antarctic fall and winter, and exceptionally cold temperatures. In October, however (bottom image), the hole shrank dramatically, much more quickly than usual. By the end of October, the hole was only one-third of it's previous size. In a typical year, the ozone hole does not collapse until the end of November. NASA scientists were surprised by this early shrinking and speculate it is related to the region's weather. Global ozone levels are measured by the Total Ozone Mapping Spectrometer (TOMS). For more information about ozone, read the Earth Observatory's ozone fact sheet, view global ozone data and see these ozone images. Images by Greg Shirah, NASA GSFC Scientific Visualization Studio.

Three Fresh Exposures, Stretched Color

NASA Technical Reports Server (NTRS)

2004-01-01

This panoramic camera image from NASA's Mars Exploration Rover Opportunity has been processed using a technique known as a decorrelation stretch to exaggerate the colors. The area in the image includes three holes created inside 'Endurance Crater' by Opportunity's rock abrasion tool between sols 143 and 148 (June 18 and June 23, 2004). Because color variations are so subtle in the pictured area, stretched images are useful for discriminating color differences that can alert scientists to compositional and textural variations. For example, without the exaggeration, no color difference would be discernable among the tailings left behind after the grinding of these holes, but in this stretched image, the tailings around 'London' (top) appear more red than those of the other holes ('Virginia,' middle, and 'Cobble Hill,' bottom). Scientists believe that is because the rock abrasion tool sliced through two 'blueberries,' or spherules (visible on the upper left and upper right sides of the circle). When the blades break up these spherules, composed of mostly gray hematite, the result is a bright red powder. In this image, you can see the rock layers that made the team want to grind holes in each identified layer. The top layer is yellowish red, the middle is yellowish green and the lower layer is green. Another advantage to viewing this stretched image is the clear detail of the distribution of the rock abrasion tool tailings (heading down-slope) and the differences in rock texture. This image was created using the 753-, 535- and 432-nanometer filters.

Spherical neutron generator

DOEpatents

Leung, Ka-Ngo

2006-11-21

A spherical neutron generator is formed with a small spherical target and a spherical shell RF-driven plasma ion source surrounding the target. A deuterium (or deuterium and tritium) ion plasma is produced by RF excitation in the plasma ion source using an RF antenna. The plasma generation region is a spherical shell between an outer chamber and an inner extraction electrode. A spherical neutron generating target is at the center of the chamber and is biased negatively with respect to the extraction electrode which contains many holes. Ions passing through the holes in the extraction electrode are focused onto the target which produces neutrons by D-D or D-T reactions.

Transport limited interfacial carrier relaxation in a double-layer device investigated by time-resolved second harmonic generation and impedance spectroscopy

NASA Astrophysics Data System (ADS)

Zhang, Le; Taguchi, Dai; Li, Jun; Manaka, Takaaki; Iwamoto, Mitsumasa

2011-02-01

The interfacial carrier relaxation in an indium tin oxide/polyimide/pentacene/Au double-layer device was studied in both time and frequency domains by using time-resolved second harmonic generation (TR-SHG) and impedance spectroscopy (IS), respectively. Although both hole and electron injection into the pentacene layer and their accumulation at the pentacene/polyimide interface were revealed in TR-SHG, it was only observed in IS under the hole injection condition. The "contradiction" between the two methods for the same carrier relaxation process was explained on the basis of a model, transport limited interfacial carrier relaxation, in which the quasistatic state governs the one-directional carrier transport.

Ligand-Asymmetric Janus Quantum Dots for Efficient Blue-Quantum Dot Light-Emitting Diodes.

PubMed

Cho, Ikjun; Jung, Heeyoung; Jeong, Byeong Guk; Hahm, Donghyo; Chang, Jun Hyuk; Lee, Taesoo; Char, Kookheon; Lee, Doh C; Lim, Jaehoon; Lee, Changhee; Cho, Jinhan; Bae, Wan Ki

2018-06-19

We present ligand-asymmetric Janus quantum dots (QDs) to improve the device performance of quantum dot light-emitting diodes (QLEDs). Specifically, we devise blue QLEDs incorporating blue QDs with asymmetrically modified ligands, in which the bottom ligand of QDs in contact with ZnO electron-transport layer serves as a robust adhesive layer and an effective electron-blocking layer and the top ligand ensures uniform deposition of organic hole transport layers with enhanced hole injection properties. Suppressed electron overflow by the bottom ligand and stimulated hole injection enabled by the top ligand contribute synergistically to boost the balance of charge injection in blue QDs and therefore the device performance of blue QLEDs. As an ultimate achievement, the blue QLED adopting ligand-asymmetric QDs displays 2-fold enhancement in peak external quantum efficiency (EQE = 3.23%) compared to the case of QDs with native ligands (oleic acid) (peak EQE = 1.49%). The present study demonstrates an integrated strategy to control over the charge injection properties into QDs via ligand engineering that enables enhancement of the device performance of blue QLEDs and thus promises successful realization of white light-emitting devices using QDs.

A charge inverter for III-nitride light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zi-Hui, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn; Zhang, Yonghui; Bi, Wengang, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn

In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a semiconductor, making an Electrode-Insulator-Semiconductor (EIS) structure, which is formed by depositing an extremely thin SiO{sub 2} insulator layer on the p{sup +}-GaN surface of a LED structure before growing the p-electrode. When the LED is forward-biased, a weak inversion layer can be obtained at the interface between the p{sup +}-GaN and SiO{sub 2} insulator. The weak inversion region can shorten the carrier tunnel distance. Meanwhile, the smaller dielectric constantmore » of the thin SiO{sub 2} layer increases the local electric field within the tunnel region, and this is effective in promoting the hole transport from the p-electrode into the p{sup +}-GaN layer. Due to the improved hole injection, the external quantum efficiency is increased by 20% at 20 mA for the 350 × 350 μm{sup 2} LED chip. Thus, the proposed EIS holds great promise for high efficiency LEDs.« less

Doping-induced spectral shifts in two-dimensional metal oxides

NASA Astrophysics Data System (ADS)

Ylvisaker, E. R.; Pickett, W. E.

2013-03-01

Doping of strongly layered ionic oxides is an established paradigm for creating novel electronic behavior. This is nowhere more apparent than in superconductivity, where doping gives rise to high-temperature superconductivity in cuprates (hole doped) and to surprisingly high Tc in HfNCl (Tc = 25.5 K, electron doped). First-principles calculations of hole doping of the layered delafossite CuAlO2 reveal unexpectedly large doping-induced shifts in spectral density, strongly in opposition to the rigid-band picture that is widely used as an accepted guideline. These spectral shifts, of similar origin as the charge transfer used to produce negative electron affinity surfaces and adjust Schottky barrier heights, drastically alter the character of the Fermi level carriers, leading in this material to an O-Cu-O molecule-based carrier (or polaron, at low doping) rather than a nearly pure-Cu hole as in a rigid-band picture. First-principles linear response electron-phonon coupling (EPC) calculations reveal, as a consequence, net weak EPC and no superconductivity rather than the high Tc obtained previously using rigid-band expectations. These specifically two-dimensional dipole-layer-driven spectral shifts provide new insights into materials design in layered materials for functionalities besides superconductivity.

Crater with Exposed Layers

NASA Image and Video Library

2017-01-17

On Earth, geologists can dig holes and pull up core samples to find out what lies beneath the surface. On Mars, geologists cannot dig holes very easily themselves, but a process has been occurring for billions of years that has been digging holes for them: impact cratering. Impact craters form when an asteroid, meteoroid, or comet crashes into a planet's surface, causing an explosion. The energy of the explosion, and the resulting size of the impact crater, depends on the size and density of the impactor, as well as the properties of the surface it hits. In general, the larger and denser the impactor, the larger the crater it will form. The impact crater in this image is a little less than 3 kilometers in diameter. The impact revealed layers when it excavated the Martian surface. Layers can form in a variety of different ways. Multiple lava flows in one area can form stacked sequences, as can deposits from rivers or lakes. Understanding the geology around impact craters and searching for mineralogical data within their layers can help scientists on Earth better understand what the walls of impact craters on Mars expose. http://photojournal.jpl.nasa.gov/catalog/PIA12328

Scalar-Tensor Black Holes Embedded in an Expanding Universe

NASA Astrophysics Data System (ADS)

Tretyakova, Daria; Latosh, Boris

2018-02-01

In this review we focus our attention on scalar-tensor gravity models and their empirical verification in terms of black hole and wormhole physics. We focus on a black hole, embedded in an expanding universe, describing both cosmological and astrophysical scales. We show that in scalar-tensor gravity it is quite common that the local geometry is isolated from the cosmological expansion, so that it does not backreact on the black hole metric. We try to extract common features of scalar-tensor black holes in an expanding universe and point out the gaps that must be filled.

An option for delta-shaped gastroduodenostomy in totally laparoscopic distal gastrectomy for gastric cancer: A single-layer suturing technique for the stapler entry hole using knotless barbed sutures combined with the application of additional knotted sutures.

PubMed

Tokuhara, Takaya; Nakata, Eiji; Tenjo, Toshiyuki; Kawai, Isao; Kondo, Keisaku; Ueda, Hirofumi; Tomioka, Atsushi

2018-01-01

We report an option for delta-shaped gastroduodenostomy in totally laparoscopic distal gastrectomy (TLDG) for gastric cancer. We detail a single-layer suturing technique for the endoscopic linear stapler entry hole using knotless barbed sutures combined with the application of additional knotted sutures. From June 2013 to February 2017, we performed TLDG with delta-shaped gastroduodenostomy in 20 patients with gastric cancer. The linear stapler was closed and fired to attach the posterior walls of the remnant stomach and the duodenum together. After creating a good view of the greater curvature side of the entry hole for the stapler by retracting the knotted suture on the lesser curvature side toward the ventral side, we performed single-layer entire-thickness continuous suturing of this hole using a 15-cm-long barbed suture running from the greater curvature side to the lesser curvature side. We placed the second and third stitches between the seromuscular layer of the remnant stomach and the entire-thickness layer of the duodenum while suturing the duodenal mucosa as minutely as possible. In addition, we routinely added one or two entire-thickness knotted sutures at the site near the greater curvature side. We placed similar additional knotted sutures at the site with a broad pitch. TLDG with this reconstruction technique was successfully performed in all patients with no occurrences of anastomotic leakage or intraabdominal abscess around the anastomosis. It is suggested that this method can be one option for delta-shaped gastroduodenostomy in TLDG due to its cost-effectiveness and feasibility.

An option for delta-shaped gastroduodenostomy in totally laparoscopic distal gastrectomy for gastric cancer: A single-layer suturing technique for the stapler entry hole using knotless barbed sutures combined with the application of additional knotted sutures

PubMed Central

Tokuhara, Takaya; Nakata, Eiji; Tenjo, Toshiyuki; Kawai, Isao; Kondo, Keisaku; Ueda, Hirofumi; Tomioka, Atsushi

2018-01-01

We report an option for delta-shaped gastroduodenostomy in totally laparoscopic distal gastrectomy (TLDG) for gastric cancer. We detail a single-layer suturing technique for the endoscopic linear stapler entry hole using knotless barbed sutures combined with the application of additional knotted sutures. From June 2013 to February 2017, we performed TLDG with delta-shaped gastroduodenostomy in 20 patients with gastric cancer. The linear stapler was closed and fired to attach the posterior walls of the remnant stomach and the duodenum together. After creating a good view of the greater curvature side of the entry hole for the stapler by retracting the knotted suture on the lesser curvature side toward the ventral side, we performed single-layer entire-thickness continuous suturing of this hole using a 15-cm-long barbed suture running from the greater curvature side to the lesser curvature side. We placed the second and third stitches between the seromuscular layer of the remnant stomach and the entire-thickness layer of the duodenum while suturing the duodenal mucosa as minutely as possible. In addition, we routinely added one or two entire-thickness knotted sutures at the site near the greater curvature side. We placed similar additional knotted sutures at the site with a broad pitch. TLDG with this reconstruction technique was successfully performed in all patients with no occurrences of anastomotic leakage or intraabdominal abscess around the anastomosis. It is suggested that this method can be one option for delta-shaped gastroduodenostomy in TLDG due to its cost-effectiveness and feasibility. PMID:29375711

Designing heterostructures with higher-temperature superconductivity

NASA Astrophysics Data System (ADS)

Le Hur, Karyn; Chung, Chung-Hou; Paul, I.

2011-07-01

We propose to increase the superconducting transition temperature Tc of strongly correlated materials by designing heterostructures which exhibit a high pairing energy as a result of magnetic fluctuations. More precisely, applying an effective theory of the doped Mott insulator, we envisage a bilayer Hubbard system where both layers exhibit intrinsic intralayer (intraband) d-wave superconducting correlations. Introducing a finite asymmetry between the hole densities of the two layers such that one layer becomes slightly more underdoped and the other more overdoped, we show a visible enhancement of Tc compared to the optimally doped isolated layer. Using the bonding and antibonding band basis, we show that the mechanism behind this enhancement of Tc is the interband pairing correlation mediated by the hole asymmetry which strives to decrease the paramagnetic nodal contribution to the superfluid stiffness. For two identical layers, Tc remains comparable to that of the isolated layer until moderate values of the interlayer single-particle tunneling term. These heterostructures shed new light on fundamental questions related to superconductivity.

Solid state photosensitive devices which employ isolated photosynthetic complexes

DOEpatents

Peumans, Peter; Forrest, Stephen R.

2009-09-22

Solid state photosensitive devices including photovoltaic devices are provided which comprise a first electrode and a second electrode in superposed relation; and at least one isolated Light Harvesting Complex (LHC) between the electrodes. Preferred photosensitive devices comprise an electron transport layer formed of a first photoconductive organic semiconductor material, adjacent to the LHC, disposed between the first electrode and the LHC; and a hole transport layer formed of a second photoconductive organic semiconductor material, adjacent to the LHC, disposed between the second electrode and the LHC. Solid state photosensitive devices of the present invention may comprise at least one additional layer of photoconductive organic semiconductor material disposed between the first electrode and the electron transport layer; and at least one additional layer of photoconductive organic semiconductor material, disposed between the second electrode and the hole transport layer. Methods of generating photocurrent are provided which comprise exposing a photovoltaic device of the present invention to light. Electronic devices are provided which comprise a solid state photosensitive device of the present invention.

Single-Layer Halide Perovskite Light-Emitting Diodes with Sub-Band Gap Turn-On Voltage and High Brightness.

PubMed

Li, Junqiang; Shan, Xin; Bade, Sri Ganesh R; Geske, Thomas; Jiang, Qinglong; Yang, Xin; Yu, Zhibin

2016-10-03

Charge-carrier injection into an emissive semiconductor thin film can result in electroluminescence and is generally achieved by using a multilayer device structure, which requires an electron-injection layer (EIL) between the cathode and the emissive layer and a hole-injection layer (HIL) between the anode and the emissive layer. The recent advancement of halide perovskite semiconductors opens up a new path to electroluminescent devices with a greatly simplified device structure. We report cesium lead tribromide light-emitting diodes (LEDs) without the aid of an EIL or HIL. These so-called single-layer LEDs have exhibited a sub-band gap turn-on voltage. The devices obtained a brightness of 591 197 cd m -2 at 4.8 V, with an external quantum efficiency of 5.7% and a power efficiency of 14.1 lm W -1 . Such an advancement demonstrates that very high efficiency of electron and hole injection can be obtained in perovskite LEDs even without using an EIL or HIL.

Highly efficient and stable inverted perovskite solar cell employing PEDOT:GO composite layer as a hole transport layer.

PubMed

Yu, Jae Choul; Hong, Ji A; Jung, Eui Dae; Kim, Da Bin; Baek, Soo-Min; Lee, Sukbin; Cho, Shinuk; Park, Sung Soo; Choi, Kyoung Jin; Song, Myoung Hoon

2018-01-18

The beneficial use of a hole transport layer (HTL) as a substitution for poly(3,4-ethlyenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) is regarded as one of the most important approaches for improving the stability and efficiency of inverted perovskite solar cells. Here, we demonstrate highly efficient and stable inverted perovskite solar cells by applying a GO-doped PEDOT:PSS (PEDOT:GO) film as an HTL. The high performance of this solar cell stems from the excellent optical and electrical properties of the PEDOT:GO film, including a higher electrical conductivity, a higher work function related to the reduced contact barrier between the perovskite layer and the PEDOT:GO layer, enhanced crystallinity of the perovskite crystal, and suppressed leakage current. Moreover, the device with the PEDOT:GO layer showed excellent long-term stability in ambient air conditions. Thus, the enhancement in the efficiency and the excellent stability of inverted perovskite solar cells are promising for the eventual commercialization of perovskite optoelectronic devices.

Boosting jet power in black hole spacetimes

PubMed Central

Neilsen, David; Lehner, Luis; Palenzuela, Carlos; Hirschmann, Eric W.; Liebling, Steven L.; Motl, Patrick M.; Garrett, Travis

2011-01-01

The extraction of rotational energy from a spinning black hole via the Blandford–Znajek mechanism has long been understood as an important component in models to explain energetic jets from compact astrophysical sources. Here we show more generally that the kinetic energy of the black hole, both rotational and translational, can be tapped, thereby producing even more luminous jets powered by the interaction of the black hole with its surrounding plasma. We study the resulting Poynting jet that arises from single boosted black holes and binary black hole systems. In the latter case, we find that increasing the orbital angular momenta of the system and/or the spins of the individual black holes results in an enhanced Poynting flux. PMID:21768341

Overview of Hole GT2A: Drilling middle gabbro in Wadi Tayin massif, Oman ophiolite

NASA Astrophysics Data System (ADS)

Takazawa, E.; Kelemen, P. B.; Teagle, D. A. H.; Coggon, J. A.; Harris, M.; Matter, J. M.; Michibayashi, K.

2017-12-01

Hole GT2A (UTM: 40Q 655960.7E / 2529193.5N) was drilled by the Oman Drilling Project (OmDP) into Wadi Gideah of Wadi Tayin massif in the Samail ophiolite, Oman. OmDP is an international collaboration supported by the International Continental Scientific Drilling Program, the Deep Carbon Observatory, NSF, IODP, JAMSTEC, and the European, Japanese, German and Swiss Science Foundations, with in-kind support in Oman from the Ministry of Regional Municipalities and Water Resources, Public Authority of Mining, Sultan Qaboos University, and the German University of Technology. Hole GT2A was diamond cored in 25 Dec 2016 to 18 Jan 2017 to a total depth of 406.77 m. The outer surfaces of the cores were imaged and described on site before being curated, boxed and shipped to the IODP drill ship Chikyu, where they underwent comprehensive visual and instrumental analysis. 33 shipboard scientists were divided into six teams (Igneous, Alteration, Structural, Geochem, Physical Properties, Paleomag) to describe and analyze the cores. Hole GT2A drilled through the transition between foliated and layered gabbro. The transition zone occurs between 50 and 150 m curation corrected depth (CCD). The top 50 m of Hole GT2A is foliated gabbro whereas the bottom 250 m consists of layered gabbro. Brittle fracture is observed throughout the core. Intensity of alteration vein decreases from the top to the bottom of the hole. On the basis of changes in grain size and/or modal abundance and/or appearance/disappearance of igneous primary mineral(s) five lithological units are defined in Hole GT2A (Unit I to V). The uppermost part of Hole GT2A (Unit I) is dominated by fine-grained granular olivine gabbro intercalated with less dominant medium-grained granular olivine gabbro and rare coarse-grained varitextured gabbro. The lower part of the Hole (Units II, III and V) is dominated by medium-grained olivine gabbro, olivine melagabbro and olivine-bearing gabbro. Modally-graded rhythmic layering with olivine melagabbro and olivine-bearing gabbro is well conspicuous in the bottom part of Unit II. The Unit IV occurs between 284.25 m and 293.92 m CCD from the top of the hole and is characterized by orthopyroxene-bearing lithologies such as fine-grained gabbronorite and coarse-grained troctolite. Discrete orthopyroxene crystals occur in these lithologies.

Interface Play between Perovskite and Hole Selective Layer on the Performance and Stability of Perovskite Solar Cells.

PubMed

Salado, Manuel; Idigoras, Jesus; Calio, Laura; Kazim, Samrana; Nazeeruddin, Mohammad Khaja; Anta, Juan A; Ahmad, Shahzada

2016-12-21

Perovskite solar cells with variety of hole selective contacts such as 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (Spiro-OMeTAD), poly(3-hexylthiophene-2,5-diyl), poly[bis(4-phenyl)(2,5,6-trimentlyphenyl)amine], 5,10,15-trihexyl-3,8,13-tris(4-methoxyphenyl)-10,15-dihydro-5H-diindolo[3,2-a:3',2'-c]carbazole (HMPDI), and 2',7'-bis(bis(4-methoxyphenyl)amino)spiro[cyclopenta[2,1-b:3,4-b']dithiophene-4,9'-fluorene] were employed to elucidate its role at the interface of perovskite and metallic cathode. Microscopy images revealed Spiro-OMeTAD and HMPDI produce smoother and intimate contact between perovskite/hole transporting materials (HTM) interfaces among others evaluated here. This morphological feature appears to be connected with three fundamental facts: (1) hole injection to the HTM is much more efficient as evidenced by photoluminescence measurements, (2) recombination losses are less important as evidenced by intensity-modulated photovoltage spectroscopy and impedance spectroscopy measurements, and (3) fabricated solar cells are much more robust against degradation by moisture. Devices with higher open-circuit photovoltages are characterized by higher values of the recombination resistance extracted from the impedance data. The variation in device hysteresis behavior can be ascribed mainly due to the molecular interaction and the core of HTM employed. In all cases, this fact is related with a larger value of the low-frequency capacitance, which indicates that the HTM can induce specific slow processes of ion accumulation at the interface. Notably, these processes tend to slowly relax in time, as hysteresis is substantially reduced for aged devices.

Automated coronal hole identification via multi-thermal intensity segmentation

NASA Astrophysics Data System (ADS)

Garton, Tadhg M.; Gallagher, Peter T.; Murray, Sophie A.

2018-01-01

Coronal holes (CH) are regions of open magnetic fields that appear as dark areas in the solar corona due to their low density and temperature compared to the surrounding quiet corona. To date, accurate identification and segmentation of CHs has been a difficult task due to their comparable intensity to local quiet Sun regions. Current segmentation methods typically rely on the use of single Extreme Ultra-Violet passband and magnetogram images to extract CH information. Here, the coronal hole identification via multi-thermal emission recognition algorithm (CHIMERA) is described, which analyses multi-thermal images from the atmospheric image assembly (AIA) onboard the solar dynamics observatory (SDO) to segment coronal hole boundaries by their intensity ratio across three passbands (171 Å, 193 Å, and 211 Å). The algorithm allows accurate extraction of CH boundaries and many of their properties, such as area, position, latitudinal and longitudinal width, and magnetic polarity of segmented CHs. From these properties, a clear linear relationship was identified between the duration of geomagnetic storms and coronal hole areas. CHIMERA can therefore form the basis of more accurate forecasting of the start and duration of geomagnetic storms.

Method of draining water through a solid waste site without leaching

DOEpatents

Treat, Russell L.; Gee, Glendon W.; Whyatt, Greg A.

1993-01-01

The present invention is a method of preventing water from leaching solid waste sites by preventing atmospheric precipitation from contacting waste as the water flows through a solid waste site. The method comprises placing at least one drain hole through the solid waste site. The drain hole is seated to prevent waste material from entering the drain hole, and the solid waste site cover material is layered and graded to direct water to flow toward the drain hole and to soil beneath the waste site.

Effect of Vortex Circulation on Injectant from a Single Film-Cooling Hole and a Row of Film-Cooling Holes in a Turbulent Boundary Layer. Part 1. Injection Beneath the Vortex Downwash

DTIC Science & Technology

1989-06-01

coefficients vortex circulation, symbols used in vorticity plots representing circulation values derived from different vortex core models injection...derived from different vortex core models dimensionless core size parameter: t wice the a verage core radius divided by t h e i n jection hole...Wall Heating, xjd=109.2, m=0.5, Single Injection Hole Vortex w, Temp. Difference Range (.5- 2.5) degree s 91. Local Temperature Distribution

NuSTAR Seeks Hidden Black Holes

NASA Image and Video Library

2015-07-06

Top: An illustration of NASA's Nuclear Spectroscopic Telescope Array, or NuSTAR, in orbit. The unique school bus-long mast allows NuSTAR to focus high energy X-rays. Lower-left: A color image from NASA's Hubble Space Telescope of one of the nine galaxies targeted by NuSTAR in search of hidden black holes. Bottom-right: An artist's illustration of a supermassive black hole, actively feasting on its surroundings. The central black hole is hidden from direct view by a thick layer of encircling gas and dust. http://photojournal.jpl.nasa.gov/catalog/PIA19348

Method of draining water through a solid waste site without leaching

DOEpatents

Treat, R.L.; Gee, G.W.; Whyatt, G.A.

1993-02-02

The present invention is a method of preventing water from leaching solid waste sites by preventing atmospheric precipitation from contacting waste as the water flows through a solid waste site. The method comprises placing at least one drain hole through the solid waste site. The drain hole is seated to prevent waste material from entering the drain hole, and the solid waste site cover material is layered and graded to direct water to flow toward the drain hole and to soil beneath the waste site.

Transient electroluminescence on pristine and degraded phosphorescent blue OLEDs

NASA Astrophysics Data System (ADS)

Niu, Quan; Blom, Paul W. M.; May, Falk; Heimel, Paul; Zhang, Minlu; Eickhoff, Christian; Heinemeyer, Ute; Lennartz, Christian; Crǎciun, N. Irina

2017-11-01

In state-of-the-art blue phosphorescent organic light-emitting diode (PHOLED) device architectures, electrons and holes are injected into the emissive layer, where they are carried by the emitting and hole transporting units, respectively. Using transient electroluminescence measurements, we disentangle the contribution of the electrons and holes on the transport and efficiency of both pristine and degraded PHOLEDs. By varying the concentration of hole transporting units, we show that for pristine PHOLEDs, the transport is electron dominated. Furthermore, degradation of the PHOLEDs upon electrical aging is not related to the hole transport but is governed by a decrease in the electron transport due to the formation of electron traps.

surrkick: Black-hole kicks from numerical-relativity surrogate models

NASA Astrophysics Data System (ADS)

Gerosa, Davide; Hébert, François; Stein, Leo C.

2018-04-01

surrkick quickly and reliably extract recoils imparted to generic, precessing, black hole binaries. It uses a numerical-relativity surrogate model to obtain the gravitational waveform given a set of binary parameters, and from this waveform directly integrates the gravitational-wave linear momentum flux. This entirely bypasses the need of fitting formulae which are typically used to model black-hole recoils in astrophysical contexts.

Hole-Accepting-Ligand-Modified CdSe QDs for Dramatic Enhancement of Photocatalytic and Photoelectrochemical Hydrogen Evolution by Solar Energy.

PubMed

Li, Xu-Bing; Liu, Bin; Wen, Min; Gao, Yu-Ji; Wu, Hao-Lin; Huang, Mao-Yong; Li, Zhi-Jun; Chen, Bin; Tung, Chen-Ho; Wu, Li-Zhu

2016-04-01

Solar H 2 evolution of CdSe QDs can be significantly enhanced simply by introducing a suitable hole-accepting-ligand for achieving efficient hole extraction and transfer at the nanoscale interfaces, which opens an effective pathway for dissociation of excitons to generate long-lived charge separation, thus improving the solar-to-fuel conversion efficiency.

The Antarctic Ozone Hole.

ERIC Educational Resources Information Center

Stolarski, Richard S.

1988-01-01

Discusses the Airborne Antarctic Ozone Experiment (1987) and the findings of the British Antarctic Survey (1985). Proposes two theories for the appearance of the hole in the ozone layer over Antarctica which appears each spring; air pollution and natural atmospheric shifts. Illustrates the mechanics of both. Supports worldwide chlorofluorocarbon…

Underground mineral extraction

NASA Technical Reports Server (NTRS)

Miller, C. G.; Stephens, J. B.

1980-01-01

A method was developed for extracting underground minerals such as coal, which avoids the need for sending personnel underground and which enables the mining of steeply pitched seams of the mineral. The method includes the use of a narrow vehicle which moves underground along the mineral seam and which is connected by pipes or hoses to water pumps at the surface of the Earth. The vehicle hydraulically drills pilot holes during its entrances into the seam, and then directs sideward jets at the seam during its withdrawal from each pilot hole to comminute the mineral surrounding the pilot hole and combine it with water into a slurry, so that the slurried mineral can flow to a location where a pump raises the slurry to the surface.

Collisionless magnetic reconnection in curved spacetime and the effect of black hole rotation

NASA Astrophysics Data System (ADS)

Comisso, Luca; Asenjo, Felipe A.

2018-02-01

Magnetic reconnection in curved spacetime is studied by adopting a general-relativistic magnetohydrodynamic model that retains collisionless effects for both electron-ion and pair plasmas. A simple generalization of the standard Sweet-Parker model allows us to obtain the first-order effects of the gravitational field of a rotating black hole. It is shown that the black hole rotation acts to increase the length of azimuthal reconnection layers, thus leading to a decrease of the reconnection rate. However, when coupled to collisionless thermal-inertial effects, the net reconnection rate is enhanced with respect to what would happen in a purely collisional plasma due to a broadening of the reconnection layer. These findings identify an underlying interaction between gravity and collisionless magnetic reconnection in the vicinity of compact objects.

Modeling of chemical vapor infiltration for ceramic composites reinforced with layered, woven fabrics

NASA Technical Reports Server (NTRS)

Chung, Gui-Yung; Mccoy, Benjamin J.

1991-01-01

A homogeneous model is developed for the chemical vapor infiltration by one-dimensional diffusion into a system of layered plies consisting of woven tows containing bundles of filaments. The model predictions of the amount of deposition and the porosity of the sample as a function of time are compared with the predictions of a recent nonhomogeneous model with aligned holes formed by the weave. The nonhomogeneous model allows for diffusion through the aligned holes, into the spaces between plies, and into the gaps around filaments; i.e., three diffusion equations apply. Relative to the nonhomogeneous results, the homogeneous model underestimates the amount of deposition, since the absence of holes and spaces allows earlier occlusion of gaps around filaments and restricts the vapor infiltration.

Energy extraction of a spinning particle via the super Penrose process from an extremal Kerr black hole

NASA Astrophysics Data System (ADS)

Liu, Yan; Liu, Wen-Biao

2018-03-01

The energy extraction of the collisional Penrose process has been investigated in recent years. Previous researchers mainly concentrated on the case of nonspin massive or massless particles, and they discovered that when the collision occurs near the horizon of extremal rotating black holes, the arbitrary large efficiency can be achieved with the particle's angular momentum below the critical value as L1<2 . In this paper, the energy extraction of spinning massive particles is calculated via the super Penrose process. We obtain the dependence of the impact factor and the turning points on the particle's spin s . The super Penrose process can occur only when s ≤1 and J1<2 , where J1 is the spinning particle's angular momentum. It is found that the efficiency of the energy extraction is monotonously increasing with the particle's spin s increasing for s <1 , and it can become arbitrarily high when the collision occurs close to the horizon. We compare the maximum extracted energy of spinning particles with that of the nonspin case and find a significant increase of the extracted energy. When s →1 , the maximum extracted energy can be orders of magnitude larger than that of the nonspin case. For the astrophysical black holes, the large efficiency is also obtained. Naturally, when the particle's spin s ≪1 , we can degenerate the result back to the nonspin case.

Organic photosensitive optoelectronic device having a phenanthroline exciton blocking layer

DOEpatents

Thompson, Mark E [Anaheim Hills, CA; Li, Jian [Los Angeles, CA; Forrest, Stephen [Princeton, NJ; Rand, Barry [Princeton, NJ

2011-02-22

An organic photosensitive optoelectronic device, having an anode, a cathode, and an organic blocking layer between the anode and the cathode is described, wherein the blocking layer comprises a phenanthroline derivative, and at least partially blocks at least one of excitons, electrons, and holes.

Effect of Nonionic Surfactant Additive in PEDOT:PSS on PFO Emission Layer in Organic-Inorganic Hybrid Light-Emitting Diode.

PubMed

Cho, Seong Rae; Porte, Yoann; Kim, Yun Cheol; Myoung, Jae-Min

2018-03-21

Poly(9,9-dioctylfluorene) (PFO) has attracted significant interests owing to its versatility in electronic devices. However, changes in its optical properties caused by its various phases and the formation of oxidation defects limit the application of PFO in light-emitting diodes (LEDs). We investigated the effects of the addition of Triton X-100 (hereinafter shortened as TX) in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) to induce interlayer diffusion between PEDOT:PSS and PFO to enhance the stability of the PFO phase and suppress its oxidation. Photoluminescence (PL) measurement on PFO/TX-mixed PEDOT:PSS layers revealed that, upon increasing the concentration of TX in the PEDOT:PSS layer, the β phase of PFO could be suppressed in favor of the glassy phase and the wide PL emission centered at 535 nm caused by ketone defects formed by oxidation was decreased considerably. LEDs were then fabricated using PFO as an emission layer, TX-mixed PEDOT:PSS as hole-transport layer, and zinc oxide (ZnO) nanorods as electron-transport layer. As the TX concentration reached 3 wt %, the devices exhibited dramatic increases in current densities, which were attributed to the enhanced hole injection due to TX addition, along with a shift in the dominant emission wavelength from a green electroluminescence (EL) emission centered at 518 nm to a blue EL emission centered at 448 nm. The addition of TX in PEDOT:PSS induced a better hole injection in the PFO layer, and through interlayer diffusion, stabilized the glassy phase of PFO and limited the formation of oxidation defects.

Formation of a freely suspended membrane via a combination of interfacial reaction and wetting.

PubMed

McNamee, Cathy E; Jaumann, Manfred; Möller, Martin; Ding, Ailin; Hemeltjen, Steffen; Ebert, Susanne; Baumann, Wolfgang; Goedel, Werner A

2005-11-08

Applying poly(ethoxysiloxane) (a liquid non-water-soluble polymer that can be hydrolyzed and cross-linked by diluted acids) to an air/pH 1 water interface gave rise to thin homogeneous solid layers. These layers were strong enough to be transferable to electron microscopy grids with holes of dimensions up to 150 microm and covered the holes as freely suspended membranes. No homogeneous layers were formed at an air/pH 5 water interface. Brewster angle microscopy images show that the poly(ethoxysiloxane) is not spontaneously forming a wetting layer on water. It initially forms lenses, which slowly spread out within several hours. We conclude that the spreading occurs simultaneously with the hydrolysis and cross-linking of the poly(ethoxysiloxane) and that the reaction products finally assist the complete wetting of the water surface.

Effects of two-step Mg doping in p-GaN on efficiency characteristics of InGaN blue light-emitting diodes without AlGaN electron-blocking layers

NASA Astrophysics Data System (ADS)

Ryu, Han-Youl; Lee, Jong-Moo

2013-05-01

A light-emitting diode (LED) structure containing p-type GaN layers with two-step Mg doping profiles is proposed to achieve high-efficiency performance in InGaN-based blue LEDs without any AlGaN electron-blocking-layer structures. Photoluminescence and electroluminescence (EL) measurement results show that, as the hole concentration in the p-GaN interlayer between active region and the p-GaN layer increases, defect-related nonradiative recombination increases, while the electron current leakage decreases. Under a certain hole-concentration condition in the p-GaN interlayer, the electron leakage and active region degradation are optimized so that high EL efficiency can be achieved. The measured efficiency characteristics are analyzed and interpreted using numerical simulations.

Microchannel heat sink assembly

DOEpatents

Bonde, W.L.; Contolini, R.J.

1992-03-24

The present invention provides a microchannel heat sink with a thermal range from cryogenic temperatures to several hundred degrees centigrade. The heat sink can be used with a variety of fluids, such as cryogenic or corrosive fluids, and can be operated at a high pressure. The heat sink comprises a microchannel layer preferably formed of silicon, and a manifold layer preferably formed of glass. The manifold layer comprises an inlet groove and outlet groove which define an inlet manifold and an outlet manifold. The inlet manifold delivers coolant to the inlet section of the microchannels, and the outlet manifold receives coolant from the outlet section of the microchannels. In one embodiment, the manifold layer comprises an inlet hole extending through the manifold layer to the inlet manifold, and an outlet hole extending through the manifold layer to the outlet manifold. Coolant is supplied to the heat sink through a conduit assembly connected to the heat sink. A resilient seal, such as a gasket or an O-ring, is disposed between the conduit and the hole in the heat sink in order to provide a watertight seal. In other embodiments, the conduit assembly may comprise a metal tube which is connected to the heat sink by a soft solder. In still other embodiments, the heat sink may comprise inlet and outlet nipples. The present invention has application in supercomputers, integrated circuits and other electronic devices, and is suitable for cooling materials to superconducting temperatures. 13 figs.

The charged black-hole bomb: A lower bound on the charge-to-mass ratio of the explosive scalar field

NASA Astrophysics Data System (ADS)

Hod, Shahar

2016-04-01

The well-known superradiant amplification mechanism allows a charged scalar field of proper mass μ and electric charge q to extract the Coulomb energy of a charged Reissner-Nordström black hole. The rate of energy extraction can grow exponentially in time if the system is placed inside a reflecting cavity which prevents the charged scalar field from escaping to infinity. This composed black-hole-charged-scalar-field-mirror system is known as the charged black-hole bomb. Previous numerical studies of this composed physical system have shown that, in the linearized regime, the inequality q / μ > 1 provides a necessary condition for the development of the superradiant instability. In the present paper we use analytical techniques to study the instability properties of the charged black-hole bomb in the regime of linearized scalar fields. In particular, we prove that the lower bound q/μ>√{rm /r- - 1/ rm /r+ - 1 } provides a necessary condition for the development of the superradiant instability in this composed physical system (here r± are the horizon radii of the charged Reissner-Nordström black hole and rm is the radius of the confining mirror). This analytically derived lower bound on the superradiant instability regime of the composed black-hole-charged-scalar-field-mirror system is shown to agree with direct numerical computations of the instability spectrum.

Influence of different TiO2 blocking films on the photovoltaic performance of perovskite solar cells

NASA Astrophysics Data System (ADS)

Zhang, Chenxi; Luo, Yudan; Chen, Xiaohong; Ou-Yang, Wei; Chen, Yiwei; Sun, Zhuo; Huang, Sumei

2016-12-01

Organolead trihalide perovskite materials have been successfully used as light absorbers in efficient photovoltaic (PV) cells. Cell structures based on mesoscopic metal oxides and planar heterojunctions have already demonstrated very impressive and brisk advances, holding great potential to grow into a mature PV technology. High power conversion efficiency (PCE) values have been obtained from the mesoscopic configuration in which a few hundred nano-meter thick mesoporous scaffold (e.g. TiO2 or Al2O3) infiltrated by perovskite absorber was sandwiched between the electron and hole transport layers. A uniform and compact hole-blocking layer is necessary for high efficient perovskite-based thin film solar cells. In this study, we investigated the characteristics of TiO2 compact layer using various methods and its effects on the PV performance of perovskite solar cells. TiO2 compact layer was prepared by a sol-gel method based on titanium isopropoxide and HCl, spin-coating of titanium diisopropoxide bis (acetylacetonate), screen-printing of Dyesol's bocking layer titania paste, and a chemical bath deposition (CBD) technique via hydrolysis of TiCl4, respectively. The morphological and micro-structural properties of the formed compact TiO2 layers were characterized by scanning electronic microscopy and X-ray diffraction. The analyses of devices performance characteristics showed that surface morphologies of TiO2 compact films played a critical role in affecting the efficiencies. The nanocrystalline TiO2 film deposited via the CBD route acts as the most efficient hole-blocking layer and achieves the best performance in perovskite solar cells. The CBD-based TiO2 compact and dense layer offers a small series resistance and a large recombination resistance inside the device, and makes it possible to achieve a high power conversion efficiency of 12.80%.

Bifurcation from stable holes to replicating holes in vibrated dense suspensions.

PubMed

Ebata, H; Sano, M

2013-11-01

In vertically vibrated starch suspensions, we observe bifurcations from stable holes to replicating holes. Above a certain acceleration, finite-amplitude deformations of the vibrated surface continue to grow until void penetrates fluid layers, and a hole forms. We studied experimentally and theoretically the parameter dependence of the holes and their stabilities. In suspensions of small dispersed particles, the circular shapes of the holes are stable. However, we find that larger particles or lower surface tension of water destabilize the circular shapes; this indicates the importance of capillary forces acting on the dispersed particles. Around the critical acceleration for bifurcation, holes show intermittent large deformations as a precursor to hole replication. We applied a phenomenological model for deformable domains, which is used in reaction-diffusion systems. The model can explain the basic dynamics of the holes, such as intermittent behavior, probability distribution functions of deformation, and time intervals of replication. Results from the phenomenological model match the linear growth rate below criticality that was estimated from experimental data.

Australian Students' Appreciation of the Greenhouse Effect and the Ozone Hole.

ERIC Educational Resources Information Center

Fisher, Brian

1998-01-01

Examines students' explanations of the greenhouse effect and the hole in the ozone layer, using a life-world and scientific dichotomy. Illuminates ideas often expressed in classrooms and sheds light on the progression in students' developing powers of explanation. Contains 17 references. (DDR)

Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Liwen, E-mail: lwcheng@yzu.edu.cn; Chen, Haitao; Wu, Shudong

2015-08-28

The effects of removing the AlGaN electron blocking layer (EBL), and using a last quantum barrier (LQB) with a unique design in conventional blue InGaN light-emitting diodes (LEDs), were investigated through simulations. Compared with the conventional LED design that contained a GaN LQB and an AlGaN EBL, the LED that contained an AlGaN LQB with a graded-composition and no EBL exhibited enhanced optical performance and less efficiency droop. This effect was caused by an enhanced electron confinement and hole injection efficiency. Furthermore, when the AlGaN LQB was replaced with a triangular graded-composition, the performance improved further and the efficiency droopmore » was lowered. The simulation results indicated that the enhanced hole injection efficiency and uniform distribution of carriers observed in the quantum wells were caused by the smoothing and thinning of the potential barrier for the holes. This allowed a greater number of holes to tunnel into the quantum wells from the p-type regions in the proposed LED structure.« less

Improved characteristics of conventional and inverted polymer photodetectors using phosphonic acid-based self-assembled monolayer treatment for interfacial engineering of Ga-doped ZnO electrodes

NASA Astrophysics Data System (ADS)

Kajii, Hirotake; Mohri, Yoshinori; Okui, Hiyuto; Kondow, Masahiko; Ohmori, Yutaka

2018-03-01

The characteristics of conventional and inverted polymer photodetectors based on a blend of a donor, poly(3-hexylthiophene) (P3HT), and an acceptor, fullerene derivative [6,6]phenyl-C61-butyric acid methyl ester (PCBM) using Ga-doped ZnO (GZO) electrodes modified by phosphonic acid-based self-assembled monolayer (SAM) treatment in a short time are investigated. Fluoroalkyl SAM, 1H,1H,2H,2H-perfluorooctane phosphonic acid (FOPA) treatment leads to efficient hole extraction from the active layer. The characteristics of the conventional device with GZO modified by FOPA treatment are almost the same as those with indium tin oxide modified by FOPA. Cs2CO3 and aminoalkyl SAM, 11-aminoundecylphosphonic acid (11-AUPA) treatments suppress the hole injection from GZO to the organic layer. For the inverted devices with GZO cathodes using Cs2CO3 and 11-AUPA, the dark current decreases, which results in the improved photodetector detectivity. An inverted device with both Cs2CO3 and 11-AUPA exhibits incident-photon-to-current conversion efficiency (IPCE) of approximately 65% (80%) at 0 V (-6 V) under light irradiation (λ = 500 nm), high on/off ratio, and improved durability. Improved open-circuit voltage and IPCE at low voltages are achieved by these treatments, which are related with the improved internal built-in field, the reduction of recombination probability in the vicinity of GZO, and the modified charge collection efficiency.

In-vitro Antimicrobial Activities of Some Iranian Conifers

PubMed Central

Afsharzadeh, Maryam; Naderinasab, Mahboobe; Tayarani Najaran, Zahra; Barzin, Mohammad; Emami, Seyed Ahmad

2013-01-01

Male and female leaves and fruits of eleven different taxons of Iranian conifers (Cupressus sempervirens var. horizontalis, C. sempervirens var. sempervirens, C. sempervirens cv. Cereifeormis, Juniperus communis subsp. hemisphaerica, J. excelsa subsp. excelsa, J. excelsa subsp. polycarpos, J. foetidissima, J. oblonga, J. sabina, Platycladus orientalis and Taxus baccata) were collected from different localities of Iran, dried and extracted with methanol. The extracts were tested for their antimicrobial activity against Pseudomonas aeruginosa, Staphylococcus aureus, Escherichia coli and Candida albicans. The extracts were screened qualitatively using four different methods, the disc diffusion, hole plate, cylinder agar diffusion and agar dilution methods, whereas the minimum inhibitory concentrations (MIC) of each extract were determined by the agar dilution method. The best result was obtained by means of hole plate method in qualitative determination of antimicrobial activities of extracts and the greatest activity was found against S. aureus in all tested methods. PMID:24250573

[Comparative study of the effects of sterilized air and perfluoropropane gas tamponades on recovery after idiopathic full-thickness macular hole surgery].

PubMed

He, F; Zheng, L; Dong, F T

2017-05-11

Objective: To compare the effects of sterilized air and perfluoropropane (C(3)F(8)) tamponades on recovery after vitrectomy for the treatment of idiopathic full-thickness macular hole (IFTMH). Methods: Case control study. Seventy-three eyes of 69 consecutive cases underwent vitrectomy with air (53 eyes) or 10% C(3)F(8) gas (20 eyes) tamponade. Surgical outcomes were retrospectively analyzed between the two groups, including logarithm of the minimal angle of resolution (logMAR) and optical coherence tomography findings like the size of the macular hole and the photoreceptor layer defect. Results: Preoperatively, the mean best corrected visual acuity (BCVA) was (0.10±0.49), the mean hole diameter was (777.9±320.7) μm, and the mean diameter of the photoreceptor layer defect was (1 709.3±516.0) μm in the sterilized air group, while in the C(3)F(8) group, the mean BCVA was (0.07±0.50), the mean hole diameter was (853.9±355.0) μm, and the mean defect diameter was (1 480.5±429.9) μm. The primary closure rate was 90.6% in the sterilized air group and 95.0% in the C(3)F(8) group. One month after surgery, the mean BCVA was (0.17±0.41), and the mean diameter of the photoreceptor layer defect was (820.5±598.0) μm in the sterilized air group, while in the C(3)F(8) group, the mean BCVA was 0.12±0.49, and the mean defect diameter was (762.5±658.0) μm. There was no statistically significant difference in the closure rate (χ(2)=0.019), BCVA ( t =-1.689), hole diameter ( t =0.837) and diameter of the photoreceptor layer defect ( t =0.338) between the two groups( P >0.05). Conclusions: Vitrectomy with sterilized air tamponade is safe and effective for the treatment of IFTMH and even cases with relatively large diameters. (Chin J Ophthalmol, 2017, 53: 327 - 331) .

GRAVITATIONAL WAVE EXTRACTION FROM AN INSPIRALING CONFIGURATION OF MERGING BLACK HOLES

NASA Technical Reports Server (NTRS)

Baker, John G.; Centrella, Joan; Dae-Il, Choi; Koppitz, Michael; van Meter, James

2005-01-01

We present new techniques for evolving binary black hole systems which allow the accurate determination of gravitational waveforms directly from the wave zone region of the numerical simulations. Rather than excising the black hole interiors, our approach follows the "puncture" treatment of black holes, but utilizing a new gauge condition which allows the black holes to move successfully through the computational domain. We apply these techniques to an inspiraling binary, modeling the radiation generated during the final plunge and ringdown. We demonstrate convergence of the waveforms and and good conservation of mass-energy, with just over 3% of the system s mass converted to gravitational radiation.

A grating coupler with a trapezoidal hole array for perfectly vertical light coupling between optical fibers and waveguides

NASA Astrophysics Data System (ADS)

Mizutani, Akio; Eto, Yohei; Kikuta, Hisao

2017-12-01

A grating coupler with a trapezoidal hole array was designed and fabricated for perfectly vertical light coupling between a single-mode optical fiber and a silicon waveguide on a silicon-on-insulator (SOI) substrate. The grating coupler with an efficiency of 53% was computationally designed at a 1.1-µm-thick buried oxide (BOX) layer. The grating coupler and silicon waveguide were fabricated on the SOI substrate with a 3.0-µm-thick BOX layer by a single full-etch process. The measured coupling efficiency was 24% for TE-polarized light at 1528 nm wavelength, which was 0.69 times of the calculated coupling efficiency for the 3.0-µm-thick BOX layer.

Efficient organic solar cells using copper(I) iodide (CuI) hole transport layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peng, Ying; Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ; Yaacobi-Gross, Nir

We report the fabrication of high power conversion efficiency (PCE) polymer/fullerene bulk heterojunction (BHJ) photovoltaic cells using solution-processed Copper (I) Iodide (CuI) as hole transport layer (HTL). Our devices exhibit a PCE value of ∼5.5% which is equivalent to that obtained for control devices based on the commonly used conductive polymer poly(3,4-ethylenedioxythiophene): polystyrenesulfonate as HTL. Inverted cells with PCE >3% were also demonstrated using solution-processed metal oxide electron transport layers, with a CuI HTL evaporated on top of the BHJ. The high optical transparency and suitable energetics of CuI make it attractive for application in a range of inexpensive large-area optoelectronicmore » devices.« less

Pyroelectric detector arrays

NASA Technical Reports Server (NTRS)

Fripp, A. L.; Robertson, J. B.; Breckenridge, R. A. (Inventor)

1982-01-01

A pryoelectric detector array and the method for making it are described. A series of holes formed through a silicon dioxide layer on the surface of a silicon substrate forms the mounting fixture for the pyroelectric detector array. A series of nontouching strips of indium are formed around the holes to make contact with the backside electrodes and form the output terminals for individual detectors. A pyroelectric detector strip with front and back electrodes, respectively, is mounted over the strip. Biasing resistors are formed on the surface of the silicon dioxide layer and connected to the strips. A metallized pad formed on the surface of the layer is connected to each of the biasing resistors and to the film to provide the ground for the pyroelectric detector array.

Pyroelectric detector arrays

NASA Technical Reports Server (NTRS)

Fripp, A. L.; Robertson, J. B.; Breckenridge, R. (Inventor)

1982-01-01

A pyroelectric detector array and the method for using it are described. A series of holes formed through a silicon dioxide layer on the surface of a silicon substrate forms the mounting fixture for the pyroelectric detector array. A series of nontouching strips of indium are formed around the holes to make contact with the backside electrodes and form the output terminals for individual detectors. A pyroelectric detector strip with front and back electrodes, respectively, is mounted over the strips. Biasing resistors are formed on the surface of the silicon dioxide layer and connected to the strips. A metallized pad formed on the surface of layer is connected to each of the biasing resistors and to the film to provide the ground for the pyroelectric detector array.

Formation of BaSi2 heterojunction solar cells using transparent MoOx hole transport layers

NASA Astrophysics Data System (ADS)

Du, W.; Takabe, R.; Baba, M.; Takeuchi, H.; Hara, K. O.; Toko, K.; Usami, N.; Suemasu, T.

2015-03-01

Heterojunction solar cells that consist of 15 nm thick molybdenum trioxide (MoOx, x < 3) as a hole transport layer and 600 nm thick unpassivated or passivated n-BaSi2 layers were demonstrated. Rectifying current-voltage characteristics were observed when the surface of BaSi2 was exposed to air. When the exposure time was decreased to 1 min, an open circuit voltage of 200 mV and a short circuit current density of 0.5 mA/cm2 were obtained under AM1.5 illumination. The photocurrent density under a reverse bias voltage of -1 V reached 25 mA/cm2, which demonstrates the significant potential of BaSi2 for solar cell applications.

Polyethers containing 4-(carbazol-2-yl)-7-arylbenzo[c]-1,2,5-thiadiazole chromophores as solution processed materials for hole transporting layers of OLEDs

NASA Astrophysics Data System (ADS)

Krucaite, G.; Tavgeniene, D.; Xie, Z.; Lin, X.; Zhang, B.; Grigalevicius, S.

2018-02-01

Two polyethers containing electroactive pendent 4-(carbazol-2-yl)-7-arylbenzo[c]-1,2,5-thiadiazole moieties have been synthesized by the multi-step synthetic route. Full characterization of their structures is presented. The polymers represent derivatives of very high thermal stability with initial thermal degradation temperatures of 425 °C and 431 °C. Glass transition temperatures of the amorphous materials were also very high and reached values of 154 °C and 163 °C. The electron photoemission spectra of thin layers of the polymers showed ionization potentials of 5.84 eV and 5.93 eV. Hole-transporting properties of the polymeric materials were tested in the structures of organic light emitting diodes with Alq3 as the green emitter and electron transporting material. An electroluminescent device containing hole-transporting layer (HTL) of the polymer with electroactive 4-carbazolyl-7-phenylbenzo[c]-1,2,5-thiadiazole moieties exhibited turn on voltage of 6.2 V, maximum photometric efficiency of 2.5 cd/A and maximum brightness exceeding 300 cd/m2. The device containing HTL of the polymer with 4-carbazolyl-7-(1-naphtyl)benzo[c]-1,2,5-thiadiazole moieties demonstrated turn on voltage of 5.2 V, maximum photometric efficiency of 1.6 cd/A and maximum brightness exceeding 1500 cd/m2. The efficiencies were about 30-90% higher than that of the device containing widely used hole transporting layers of poly(9-vinylcarbazole).

Snapshot of the Antarctic Ozone Hole 2010

NASA Image and Video Library

2017-12-08

Image acquired September 12, 2010 The yearly depletion of stratospheric ozone over Antarctica – more commonly referred to as the “ozone hole” – started in early August 2010 and is now expanding toward its annual maximum. The hole in the ozone layer typically reaches its maximum area in late September or early October, though atmospheric scientists must wait a few weeks after the maximum to pinpoint when the trend of ozone depletion has slowed down and reversed. The hole isn’t literal; no part of the stratosphere — the second layer of the atmosphere, between 8 and 50 km (5 and 31 miles) — is empty of ozone. Scientists use "hole" as a metaphor for the area in which ozone concentrations drop below the historical threshold of 220 Dobson Units. Historical levels of ozone were much higher than 220 Dobson Units, according to NASA atmospheric scientist Paul Newman, so this value shows a very large ozone loss. Earth's ozone layer protects life by absorbing ultraviolet light, which damages DNA in plants and animals (including humans) and leads to skin cancer. The Ozone Monitoring Instrument (OMI) on NASA’s Aura satellite acquired data for this map of ozone concentrations over Antarctica on September 12, 2010. OMI is a spectrometer that measures the amount of sunlight scattered by Earth’s atmosphere and surface, allowing scientists to assess how much ozone is present at various altitudes — particularly the stratosphere — and near the ground. So far in 2010, the size and depth of the ozone hole has been slightly below the average for 1979 to 2009, likely because of warmer temperatures in the stratosphere over the far southern hemisphere. However, even slight changes in the meteorology of the region this month could affect the rate of depletion of ozone and how large an area the ozone hole might span. You can follow the progress of the ozone hole by visiting NASA’s Ozone Hole Watch page. September 16 is the International Day for the Preservation of the Ozone Layer, a commemoration of the day in 1987 when nations commenced the signing of the Montreal Protocol to limit and eventually ban ozone-depleting substances such as chlorofluorocarbons (CFCs) and other chlorine and bromine-containing compounds. The ozone scientific assessment panel for the United Nations Environment Program, which monitors the effectiveness of the Montreal Protocol, is expected to release its latest review of the state of the world’s ozone layer by the end of 2010. (The last assessment was released in 2006.) Paul Newman is one of the four co-chairs of the assessment panel. NASA image courtesy Ozone Hole Watch. Caption by Michael Carlowicz. Instrument: Aura - OMI To learn more go to: ozonewatch.gsfc.nasa.gov/ Credit: NASA’s Earth Observatory NASA Goddard Space Flight Center is home to the nation's largest organization of combined scientists, engineers and technologists that build spacecraft, instruments and new technology to study the Earth, the sun, our solar system, and the universe. Follow us on Twitter Join us on Facebook

The collisional Penrose process

NASA Astrophysics Data System (ADS)

Schnittman, Jeremy D.

2018-06-01

Shortly after the discovery of the Kerr metric in 1963, it was realized that a region existed outside of the black hole's event horizon where no time-like observer could remain stationary. In 1969, Roger Penrose showed that particles within this ergosphere region could possess negative energy, as measured by an observer at infinity. When captured by the horizon, these negative energy particles essentially extract mass and angular momentum from the black hole. While the decay of a single particle within the ergosphere is not a particularly efficient means of energy extraction, the collision of multiple particles can reach arbitrarily high center-of-mass energy in the limit of extremal black hole spin. The resulting particles can escape with high efficiency, potentially serving as a probe of high-energy particle physics as well as general relativity. In this paper, we briefly review the history of the field and highlight a specific astrophysical application of the collisional Penrose process: the potential to enhance annihilation of dark matter particles in the vicinity of a supermassive black hole.

Evaluation of Sedative and Hypnotic Activity of Ethanolic Extract of Scoparia dulcis Linn.

PubMed Central

Moniruzzaman, Md.; Atikur Rahman, Md.; Ferdous, Afia

2015-01-01

Scoparia dulcis Linn. (SD) is a perennial herb that has been well studied for its antioxidant, anti-inflammatory, antidiabetic, and hepatoprotective effects. However, scientific information on SD regarding the neuropharmacological effect is limited. This study evaluated the sedative and hypnotic effect of the ethanolic extract of whole plants of Scoparia dulcis (EESD). For this purpose, the whole plants of S. dulcis were extracted with ethanol following maceration process and tested for the presence of phytochemical constituents. The sedative and hypnotic activity were then investigated using hole cross, open field, hole-board, rota-rod, and thiopental sodium-induced sleeping time determination tests in mice at the doses of 50, 100, and 200 mg/kg of EESD. Diazepam at the dose of 1 mg/kg was used as a reference drug in all the experiments. We found that EESD produced a significant dose-dependent inhibition of locomotor activity of mice both in hole cross and open field tests (P < 0.05). Besides, it also decreased rota-rod performances and the number of head dips in hole-board test. Furthermore, EESD significantly decreased the induction time to sleep and prolonged the duration of sleeping, induced by thiopental sodium. Taken together, our study suggests that EESD may possess sedative principles with potent hypnotic properties. PMID:25861372

Evaluation of Sedative and Hypnotic Activity of Ethanolic Extract of Scoparia dulcis Linn.

PubMed

Moniruzzaman, Md; Atikur Rahman, Md; Ferdous, Afia

2015-01-01

Scoparia dulcis Linn. (SD) is a perennial herb that has been well studied for its antioxidant, anti-inflammatory, antidiabetic, and hepatoprotective effects. However, scientific information on SD regarding the neuropharmacological effect is limited. This study evaluated the sedative and hypnotic effect of the ethanolic extract of whole plants of Scoparia dulcis (EESD). For this purpose, the whole plants of S. dulcis were extracted with ethanol following maceration process and tested for the presence of phytochemical constituents. The sedative and hypnotic activity were then investigated using hole cross, open field, hole-board, rota-rod, and thiopental sodium-induced sleeping time determination tests in mice at the doses of 50, 100, and 200 mg/kg of EESD. Diazepam at the dose of 1 mg/kg was used as a reference drug in all the experiments. We found that EESD produced a significant dose-dependent inhibition of locomotor activity of mice both in hole cross and open field tests (P < 0.05). Besides, it also decreased rota-rod performances and the number of head dips in hole-board test. Furthermore, EESD significantly decreased the induction time to sleep and prolonged the duration of sleeping, induced by thiopental sodium. Taken together, our study suggests that EESD may possess sedative principles with potent hypnotic properties.

Dual jets from binary black holes.

PubMed

Palenzuela, Carlos; Lehner, Luis; Liebling, Steven L

2010-08-20

The coalescence of supermassive black holes--a natural outcome when galaxies merge--should produce gravitational waves and would likely be associated with energetic electromagnetic events. We have studied the coalescence of such binary black holes within an external magnetic field produced by the expected circumbinary disk surrounding them. Solving the Einstein equations to describe black holes interacting with surrounding plasma, we present numerical evidence for possible jets driven by these systems. Extending the process described by Blandford and Znajek for a single, spinning black hole, the picture that emerges suggests that the electromagnetic field extracts energy from the orbiting black holes, which ultimately merge and settle into the standard Blandford-Znajek scenario. Emissions along these jets could potentially be observable at large distances.

Improvement of the photovoltaic parameters of perovskite solar cells using a reduced-graphene-oxide-modified titania layer and soluble copper phthalocyanine as a hole transporter.

PubMed

Nouri, Esmaiel; Mohammadi, Mohammad Reza; Xu, Zong-Xiang; Dracopoulos, Vassilios; Lianos, Panagiotis

2018-01-24

Functional perovskite solar cells can be made by using a simple, inexpensive and stable soluble tetra-n-butyl-substituted copper phthalocyanine (CuBuPc) as a hole transporter. In the present study, TiO 2 /reduced graphene oxide (T/RGO) hybrids were synthesized via an in situ solvothermal process and used as electron acceptor/transport mediators in mesoscopic perovskite solar cells based on soluble CuBuPc as a hole transporter and on graphene oxide (GO) as a buffer layer. The impact of the RGO content on the optoelectronic properties of T/RGO hybrids and on the solar cell performance was studied, suggesting improved electron transport characteristics and photovoltaic parameters. An enhanced electron lifetime and recombination resistance led to an increase in the short circuit current density, open circuit voltage and fill factor. The device based on a T/RGO mesoporous layer with an optimal RGO content of 0.2 wt% showed 22% higher photoconversion efficiency and higher stability compared with pristine TiO 2 -based devices.

Low resistivity ZnO-GO electron transport layer based CH{sub 3}NH{sub 3}PbI{sub 3} solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmed, Muhammad Imran, E-mail: imranrahbar@scme.nust.edu.pk, E-mail: amirhabib@scme.nust.edu.pk; Hussain, Zakir; Mujahid, Mohammad

Perovskite based solar cells have demonstrated impressive performances. Controlled environment synthesis and expensive hole transport material impede their potential commercialization. We report ambient air synthesis of hole transport layer free devices using ZnO-GO as electron selective contacts. Solar cells fabricated with hole transport layer free architecture under ambient air conditions with ZnO as electron selective contact achieved an efficiency of 3.02%. We have demonstrated that by incorporating GO in ZnO matrix, low resistivity electron selective contacts, critical to improve the performance, can be achieved. We could achieve max efficiency of 4.52% with our completed devices for ZnO: GO composite. Impedancemore » spectroscopy confirmed the decrease in series resistance and an increase in recombination resistance with inclusion of GO in ZnO matrix. Effect of temperature on completed devices was investigated by recording impedance spectra at 40 and 60 {sup o}C, providing indirect evidence of the performance of solar cells at elevated temperatures.« less

Improving the performance of AlGaN-based deep-ultraviolet light-emitting diodes using electron blocking layer with a heart-shaped graded Al composition

NASA Astrophysics Data System (ADS)

Kwon, M. R.; Park, T. H.; Lee, T. H.; Lee, B. R.; Kim, T. G.

2018-04-01

We propose a design for highly efficient AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using a heart-shaped graded Al composition electron-blocking layer (EBL). This novel structure reduced downward band bending at the interface between the last quantum barrier and the EBL and flattened the electrostatic field in the interlayer between the barriers of the multi-quantum barrier EBL. Consequently, electron leakage was significantly suppressed and hole injection efficiency was found to have improved. The parameter values of simulation were extracted from the experimental data of the reference DUV LEDs. Using the SimuLED, we compared the electrical and optical properties of three structures with different Al compositions in the active region and the EBL. The internal quantum efficiency of the proposed structure was shown to exceed those of the reference DUV LEDs by a factor of 1.9. Additionally, the output power at 20 mA was found to increase by a factor of 2.1.

Solution-Processed Metal Oxides as Efficient Carrier Transport Layers for Organic Photovoltaics.

PubMed

Choy, Wallace C H; Zhang, Di

2016-01-27

Carrier (electron and hole) transport layers (CTLs) are essential components for boosting the performance of various organic optoelectronic devices such as organic solar cells and organic light-emitting diodes. Considering the drawbacks of conventional CTLs (easily oxidized/unstable, demanding/costly fabrication, etc.), transition metal oxides with good carrier transport/extraction and superior stability have drawn extensive research interest as CTLs for next-generation devices. In recent years, many research efforts have been made toward the development of solution-based metal oxide CTLs with the focus on low- or even room-temperature processes, which can potentially be compatible with the deposition processes of organic materials and can significantly contribute to the low-cost and scale-up of organic devices. Here, the recent progress of different types of solution-processed metal oxide CTLs are systematically reviewed in the context of organic photovoltaics, from synthesis approaches to device performance. Different approaches for further enhancing the performance of solution-based metal oxide CTLs are also discussed, which may push the future development of this exciting field. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Collisionless magnetic reconnection in curved spacetime and the effect of black hole rotation

DOE PAGES

Comisso, Luca; Asenjo, Felipe A.

2018-02-12

Magnetic reconnection in curved spacetime is studied in this paper by adopting a general-relativistic magnetohydrodynamic model that retains collisionless effects for both electron-ion and pair plasmas. A simple generalization of the standard Sweet-Parker model allows us to obtain the first-order effects of the gravitational field of a rotating black hole. It is shown that the black hole rotation acts to increase the length of azimuthal reconnection layers, thus leading to a decrease of the reconnection rate. However, when coupled to collisionless thermal-inertial effects, the net reconnection rate is enhanced with respect to what would happen in a purely collisional plasmamore » due to a broadening of the reconnection layer. Finally, these findings identify an underlying interaction between gravity and collisionless magnetic reconnection in the vicinity of compact objects.« less

Collisionless magnetic reconnection in curved spacetime and the effect of black hole rotation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Comisso, Luca; Asenjo, Felipe A.

Magnetic reconnection in curved spacetime is studied in this paper by adopting a general-relativistic magnetohydrodynamic model that retains collisionless effects for both electron-ion and pair plasmas. A simple generalization of the standard Sweet-Parker model allows us to obtain the first-order effects of the gravitational field of a rotating black hole. It is shown that the black hole rotation acts to increase the length of azimuthal reconnection layers, thus leading to a decrease of the reconnection rate. However, when coupled to collisionless thermal-inertial effects, the net reconnection rate is enhanced with respect to what would happen in a purely collisional plasmamore » due to a broadening of the reconnection layer. Finally, these findings identify an underlying interaction between gravity and collisionless magnetic reconnection in the vicinity of compact objects.« less

Highly Efficient and Fully Solution-Processed Inverted Light-Emitting Diodes with Charge Control Interlayers.

PubMed

Fu, Yan; Jiang, Wei; Kim, Daekyoung; Lee, Woosuk; Chae, Heeyeop

2018-05-23

In this work, we developed a charge control sandwich structure around QD layers for the inverted QLEDs, the performance of which is shown to exceed that of the conventional QLEDs in terms of the external quantum efficiency (EQE) and the current efficiency (CE). The QD light-emitting layer (EML) is sandwiched with two ultrathin interfacial layers: one is a poly(9-vinlycarbazole) (PVK) layer to prevent excess electrons, and the other is a polyethylenimine ethoxylated (PEIE) layer to reduce the hole injection barrier. The sandwich structure resolves the imbalance between injected holes and electrons and brings the level of balanced charge carriers to a maximum. We demonstrated the highly improved performance of 89.8 cd/A of current efficiency, 22.4% of external quantum efficiency, and 72 814 cd m -2 of maximum brightness with the solution-processed inverted QLED. This sandwich structure (PVK/QD/PEIE), as a framework, can be applied to various QLED devices for enhancing performance.

Elucidating the charge carrier separation and working mechanism of CH3NH3PbI(3-x)Cl(x) perovskite solar cells.

PubMed

Edri, Eran; Kirmayer, Saar; Mukhopadhyay, Sabyasachi; Gartsman, Konstantin; Hodes, Gary; Cahen, David

2014-03-11

Developments in organic-inorganic lead halide-based perovskite solar cells have been meteoric over the last 2 years, with small-area efficiencies surpassing 15%. We address the fundamental issue of how these cells work by applying a scanning electron microscopy-based technique to cell cross-sections. By mapping the variation in efficiency of charge separation and collection in the cross-sections, we show the presence of two prime high efficiency locations, one at/near the absorber/hole-blocking-layer, and the second at/near the absorber/electron-blocking-layer interfaces, with the former more pronounced. This 'twin-peaks' profile is characteristic of a p-i-n solar cell, with a layer of low-doped, high electronic quality semiconductor, between a p- and an n-layer. If the electron blocker is replaced by a gold contact, only a heterojunction at the absorber/hole-blocking interface remains.

Anti-reflective device having an anti-reflective surface formed of silicon spikes with nano-tips

NASA Technical Reports Server (NTRS)

Bae, Youngsam (Inventor); Manohara, Harish (Inventor); Mobasser, Sohrab (Inventor); Lee, Choonsup (Inventor)

2011-01-01

Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus.

Anti- reflective device having an anti-reflection surface formed of silicon spikes with nano-tips

NASA Technical Reports Server (NTRS)

Bae, Youngsman (Inventor); Mooasser, Sohrab (Inventor); Manohara, Harish (Inventor); Lee, Choonsup (Inventor); Bae, Kungsam (Inventor)

2009-01-01

Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus.

Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sowers, A.T.; Christman, J.A.; Bremser, M.D.

1997-10-01

Cold cathode structures have been fabricated using AlN and graded AlGaN structures (deposited on n-type 6H-SiC) as the thin film emitting layer. The cathodes consist of an aluminum grid layer separated from the nitride layer by a SiO{sub 2} layer and etched to form arrays of either 1, 3, or 5 {mu}m holes through which the emitting nitride surface is exposed. After fabrication, a hydrogen plasma exposure was employed to activate the cathodes. Cathode devices with 5 {mu}m holes displayed emission for up to 30 min before failing. Maximum emission currents ranged from 10{endash}100 nA and required grid voltages rangingmore » from 20{endash}110 V. The grid currents were typically 1 to 10{sup 4} times the collector currents. {copyright} {ital 1997 American Institute of Physics.}« less

Use of laser drilling in the manufacture of organic inverter circuits.

PubMed

Iba, Shingo; Kato, Yusaku; Sekitani, Tsuyoshi; Kawaguchi, Hiroshi; Sakurai, Takayasu; Someya, Takao

2006-01-01

Inverter circuits have been made by connecting two high-quality pentacene field-effect transistors. A uniform and pinhole-free 900 nm thick polyimide gate-insulating layer was formed on a flexible polyimide film with gold gate electrodes and partially removed by using a CO2 laser drilling machine to make via holes and contact holes. Subsequent evaporation of the gold layer results in good electrical connection with a gold gate layer underneath the gate-insulating layer. By optimization of the settings of the CO2 laser drilling machine, contact resistance can be reduced to as low as 3 ohms for 180 microm square electrodes. No degradation of the transport properties of the organic transistors was observed after the laser-drilling process. This study demonstrates the feasibility of using the laser drilling process for implementation of organic transistors in integrated circuits on flexible polymer films.

Optical fiber tip with point light source of SPPs driven by three-dimensional nanostructured asymmetric metal-insulator-metal layer cap

NASA Astrophysics Data System (ADS)

Oshikane, Yasushi; Murai, Kensuke; Nakano, Motohiro

2015-09-01

Numerical analysis of three dimensional optical electro-magnetic field in a circular-truncated conical optical fiber covered by asymmetric MIM structure has been performed by a commercial finite element method package, COMSOL Multiphysics coupled with Wave Optics Module. The outermost thick metallic layer has twin nano-hole, and the waveguiding twin-hole could draw surface plasmon polaritions (SPPs) excited in the MIM structure to the surface. Finally the guided two SPPs could unite each other and may create a single bright spot. The systematic simulation is continuing, and the results will give us valuable counsel for control of surface plasmon polaritons (SPPs) appearing around the MIM structure and twin nano-hole. (1) Optimal design of the 3D FEM model for 8-core Xeon server and rational approach for the FEM analysis, (2) behavior of SPPs affected by wavelength and polarization of light travel through fiber, (3) change in excitation condition of SPPs caused by shape of the MIM structure and twin-hole, (4) effectiveness of additional nanostructures that are aimed at focusing control of two SPPs come out from the corners of twin-hole, (5) scanning ability of the MIM/twin-hole probe at nanostructured sample surface (i.e. amount of forward and backward scattering of SPPs) will be presented and discussed. Several FIBed prototypes and their characteristic of light emission will also reported.

Solution processed transition metal oxide anode buffer layers for efficiency and stability enhancement of polymer solar cells

NASA Astrophysics Data System (ADS)

Ameen, M. Yoosuf; Shamjid, P.; Abhijith, T.; Reddy, V. S.

2018-01-01

Polymer solar cells were fabricated with solution-processed transition metal oxides, MoO3 and V2O5 as anode buffer layers (ABLs). The optimized device with V2O5 ABL exhibited considerably higher power conversion efficiency (PCE) compared to the devices based on MoO3 and poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) ABLs. The space charge limited current measurements and impedance spectroscopy results of hole-only devices revealed that V2O5 provided a very low charge transfer resistance and high hole mobility, facilitating efficient hole transfer from the active layer to the ITO anode. More importantly, incorporation of V2O5 as ABL resulted in substantial improvement in device stability compared to MoO3 and PEDOT:PSS based devices. Unencapsulated PEDOT:PSS-based devices stored at a relative humidity of 45% have shown complete failure within 96 h. Whereas, MoO3 and V2O5 based devices stored in similar conditions retained 22% and 80% of their initial PCEs after 96 h. Significantly higher stability of the V2O5-based device is ascribed to the reduction in degradation of the anode/active layer interface, as evident from the electrical measurements.

Integrated Flexible Electronic Devices Based on Passive Alignment for Physiological Measurement

PubMed Central

Ryu, Jin Hwa; Byun, Sangwon; Baek, In-Bok; Lee, Bong Kuk; Jang, Won Ick; Jang, Eun-Hye; Kim, Ah-Yung; Yu, Han Yung

2017-01-01

This study proposes a simple method of fabricating flexible electronic devices using a metal template for passive alignment between chip components and an interconnect layer, which enabled efficient alignment with high accuracy. An electrocardiogram (ECG) sensor was fabricated using 20 µm thick polyimide (PI) film as a flexible substrate to demonstrate the feasibility of the proposed method. The interconnect layer was fabricated by a two-step photolithography process and evaporation. After applying solder paste, the metal template was placed on top of the interconnect layer. The metal template had rectangular holes at the same position as the chip components on the interconnect layer. Rectangular hole sizes were designed to account for alignment tolerance of the chips. Passive alignment was performed by simply inserting the components in the holes of the template, which resulted in accurate alignment with positional tolerance of less than 10 µm based on the structural design, suggesting that our method can efficiently perform chip mounting with precision. Furthermore, a fabricated flexible ECG sensor was easily attachable to the curved skin surface and able to measure ECG signals from a human subject. These results suggest that the proposed method can be used to fabricate epidermal sensors, which are mounted on the skin to measure various physiological signals. PMID:28420219

Electrical structure of Newberry Volcano, Oregon

USGS Publications Warehouse

Fitterman, D.V.; Stanley, W.D.; Bisdorf, R.J.

1988-01-01

From the interpretation of magnetotelluric, transient electromagnetic, and Schlumberger resistivity soundings, the electrical structure of Newberry Volcano in central Oregon is found to consist of four units. From the surface downward, the geoelectrical units are 1) very resistive, young, unaltered volcanic rock, (2) a conductive layer of older volcanic material composed of altered tuffs, 3) a thick resistive layer thought to be in part intrusive rocks, and 4) a lower-crustal conductor. This model is similar to the regional geoelectrical structure found throughout the Cascade Range. Inside the caldera, the conductive second layer corresponds to the steep temperature gradient and alteration minerals observed in the USGS Newberry 2 test-hole. Drill hole information on the south and north flanks of the volcano (test holes GEO N-1 and GEO N-3, respectively) indicates that outside the caldera the conductor is due to alteration minerals (primarily smectite) and not high-temperature pore fluids. On the flanks of Newberry the conductor is generally deeper than inside the caldera, and it deepens with distance from the summit. A notable exception to this pattern is seen just west of the caldera rim, where the conductive zone is shallower than at other flank locations. The volcano sits atop a rise in the resistive layer, interpreted to be due to intrusive rocks. -from Authors

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Jamal-Eddine, Zane; Akyol, Fatih; Bajaj, Sanyam; Johnson, Jared M.; Calderon, Gabriel; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Hwang, Jinwoo; Rajan, Siddharth

2018-02-01

We report on the high efficiency tunnel-injected ultraviolet light emitting diodes (UV LEDs) emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light absorption in the p-type contact layers and low electrical injection efficiency due to poor p-type conduction. In this work, a polarization engineered Al0.65Ga0.35N/In0.2Ga0.8N tunnel junction layer is adopted for non-equilibrium hole injection to replace the conventionally used direct p-type contact. A reverse-graded AlGaN contact layer is further introduced to realize a low resistance contact to the top n-AlGaN layer. This led to the demonstration of a low tunnel junction resistance of 1.9 × 10-3 Ω cm2 obtained at 1 kA/cm2. Light emission at 287 nm with an on-wafer peak external quantum efficiency of 2.8% and a wall-plug efficiency of 1.1% was achieved. The measured power density at 1 kA/cm2 was 54.4 W/cm2, confirming the efficient hole injection through interband tunneling. With the benefits of the minimized internal absorption and efficient hole injection, a tunnel-injected UV LED structure could enable future high efficiency UV emitters.

Beam brilliance investigation of high current ion beams at GSI heavy ion accelerator facility.

PubMed

Adonin, A A; Hollinger, R

2014-02-01

In this work the emittance measurements of high current Ta-beam provided by VARIS (Vacuum Arc Ion Source) ion source are presented. Beam brilliance as a function of beam aperture at various extraction conditions is investigated. Influence of electrostatic ion beam compression in post acceleration gap on the beam quality is discussed. Use of different extraction systems (single aperture, 7 holes, and 13 holes) in order to achieve more peaked beam core is considered. The possible ways to increase the beam brilliance are discussed.

Method of extracting heat from dry geothermal reservoirs

DOEpatents

Potter, R.M.; Robinson, E.S.; Smith, M.C.

1974-01-22

Hydraulic fracturing is used to interconnect two or more holes that penetrate a previously dry geothermal reservoir, and to produce within the reservoir a sufficiently large heat-transfer surface so that heat can be extracted from the reservoir at a usefully high rate by a fluid entering it through one hole and leaving it through another. Introduction of a fluid into the reservoir to remove heat from it and establishment of natural (unpumped) convective circulation through the reservoir to accomplish continuous heat removal are important and novel features of the method. (auth)

Efficient Bulk Heterojunction CH3NH3PbI3-TiO2 Solar Cells with TiO2 Nanoparticles at Grain Boundaries of Perovskite by Multi-Cycle-Coating Strategy.

PubMed

Shao, Jun; Yang, Songwang; Liu, Yan

2017-05-17

A novel bulk heterojunction (BHJ) perovskite solar cell (PSC), where the perovskite grains act as donor and the TiO 2 nanoparticles act as acceptor, is reported. This efficient BHJ PSC was simply solution processed from a mixed precursor of CH 3 NH 3 PbI 3 (MAPbI 3 ) and TiO 2 nanoparticles. With dissolution and recrystallization by multi-cycle-coating, a unique composite structure ranging from a MAPbI 3 -TiO 2 -dominated layer on the substrate side to a pure perovskite layer on the top side is formed, which is beneficial for the blocking of possible contact between TiO 2 and the hole transport material at the interface. Scanning electron microscopy clearly shows that TiO 2 nanoparticles accumulate along the grain boundaries (GBs) of perovskite. The TiO 2 nanoparticles at the GBs quickly extract and reserve photogenerated electrons before they transport into the perovskite phase, as described in the multitrapping model, retarding the electron-hole recombination and reducing the energy loss, resulting in increased V OC and fill factor. Moreover, the pinning effect of the TiO 2 nanoparticles at the GBs from the strong bindings between TiO 2 and MAPbI 3 suppresses massive ion migration along the GBs, leading to improved operational stability and diminished hysteresis. Photoluminescence (PL) quenching and PL decay confirm the efficient exciton dissociation on the heterointerface. Electrochemical impedance spectroscopy and open-circuit photovoltage decay measurements show the reduced recombination loss and improved carrier lifetime of the BHJ PSCs. This novel strategy of device design effectively combines the benefits of both planar and mesostructured architectures whilst avoiding their shortcomings, eventually leading to a high PCE of 17.42% under 1 Sun illumination. The newly proposed approach also provides a new way to fabricate a TiO 2 -containing perovskite active layer at a low temperature.

Efficient planar heterojunction perovskite solar cells employing graphene oxide as hole conductor.

PubMed

Wu, Zhongwei; Bai, Sai; Xiang, Jian; Yuan, Zhongcheng; Yang, Yingguo; Cui, Wei; Gao, Xingyu; Liu, Zhuang; Jin, Yizheng; Sun, Baoquan

2014-09-21

Graphene oxide (GO) is employed as a hole conductor in inverted planar heterojunction perovskite solar cells, and the devices with CH₃NH₃PbI₃-xClx as absorber achieve an efficiency of over 12%. The perovskite film grown on GO exhibits enhanced crystallization, high surface coverage ratio as well as preferred in-plane orientation of the (110) plane. Efficient hole extraction from the perovskite to GO is demonstrated.

Effect of film thickness on morphological evolution in dewetting and crystallization of polystyrene/poly(ε-caprolactone) blend films.

PubMed

Ma, Meng; He, Zhoukun; Yang, Jinghui; Chen, Feng; Wang, Ke; Zhang, Qin; Deng, Hua; Fu, Qiang

2011-11-01

In this Article, the morphological evolution in the blend thin film of polystyrene (PS)/poly(ε-caprolactone) (PCL) was investigated via mainly AFM. It was found that an enriched two-layer structure with PS at the upper layer and PCL at the bottom layer was formed during spinning coating. By changing the solution concentration, different kinds of crystal morphologies, such as finger-like, dendritic, and spherulitic-like, could be obtained at the bottom PCL layer. These different initial states led to the morphological evolution processes to be quite different from each other, so the phase separation, dewetting, and crystalline morphology of PS/PCL blend films as a function of time were studied. It was interesting to find that the morphological evolution of PS at the upper layer was largely dependent on the film thickness. For the ultrathin (15 nm) blend film, a liquid-solid/liquid-liquid dewetting-wetting process was observed, forming ribbons that rupture into discrete circular PS islands on voronoi finger-like PCL crystal. For the thick (30 nm) blend film, the liquid-liquid dewetting of the upper PS layer from the underlying adsorbed PCL layer was found, forming interconnected rim structures that rupture into discrete circular PS islands embedded in the single lamellar PCL dendritic crystal due to Rayleigh instability. For the thicker (60 nm) blend film, a two-step liquid-liquid dewetting process with regular holes decorated with dendritic PCL crystal at early annealing stage and small holes decorated with spherulite-like PCL crystal among the early dewetting holes at later annealing stage was observed. The mechanism of this unusual morphological evolution process was discussed on the basis of the entropy effect and annealing-induced phase separation.

Encapsulating Elastically Stretchable Neural Interfaces: Yield, Resolution, and Recording/Stimulation of Neural Activity

PubMed Central

Morrison, Barclay; Goletiani, Cezar; Yu, Zhe; Wagner, Sigurd

2013-01-01

A high resolution elastically stretchable microelectrode array (SMEA) to interface with neural tissue is described. The SMEA consists of an elastomeric substrate, such as poly(dimethylsiloxane) (PDMS), elastically stretchable gold conductors, and an electrically insulating encapsulating layer in which contact holes are opened. We demonstrate the feasibility of producing contact holes with 40 µm × 40 µm openings, show why the adhesion of the encapsulation layer to the underlying silicone substrate is weakened during contact hole fabrication, and provide remedies. These improvements result in greatly increased fabrication yield and reproducibility. An SMEA with 28 microelectrodes was fabricated. The contact holes (100 µm × 100 µm) in the encapsulation layer are only ~10% the size of the previous generation, allowing a larger number of microelectrodes per unit area, thus affording the capability to interface with a smaller neural population per electrode. This new SMEA is used to record spontaneous and evoked activity in organotypic hippocampal tissue slices at 0% strain before stretching, at 5 % and 10 % equibiaxial strain, and again at 0% strain after relaxation. The noise of the recordings increases with increasing strain. The frequency of spontaneous neural activity also increases when the SMEA is stretched. Upon relaxation, the noise returns to pre-stretch levels, while the frequency of neural activity remains elevated. Stimulus-response curves at each strain level are measured. The SMEA shows excellent biocompatibility for at least two weeks. PMID:24093006

Shubnikov-de Haas oscillations of high mobility holes in monolayer and bilayer WSe2: spin-valley locking, effective mass, and inter-layer coupling

NASA Astrophysics Data System (ADS)

Fallahazad, Babak; Movva, Hema Chandra Prakash; Kim, Kyounghwan; Larentis, Stefano; Taniguchi, Takashi; Watanabe, Kenji; Banerjee, Sanjay K.; Tutuc, Emanuel

We study the magnetotransport properties of high mobility holes in monolayer and bilayer WSe2, measured in dual-gated samples with top and bottom hexagonal boron-nitride dielectrics, and using platinum bottom contacts. Thanks to the Pt high work-function combined with the a high hole density induced electrostatically by an applied top gate bias, the contacts remain ohmic down to low (1.5 K) temperatures. The samples display well defined Shubnikov-de Haas (SdH) oscillations, and quantum Hall states (QHS) in high magnetic fields. In both mono and bilayer WSe2, the SdH oscillations and the QHSs occur predominantly at even filling factors, evincing a two-fold Landau level degeneracy consistent with spin-valley locking. The Fourier transform analysis of the SdH oscillations in dual-gated bilayer WSe2 reveal the presence of two subbands, each localized in the top or the bottom layer, as well as negative compressibility. From the temperature dependence of the SdH oscillation amplitude we determine a hole effective mass of 0.45me for both mono and bilayer WSe2. The top and bottom layer densities can be independently tuned using the top and bottom gates, respectively, evincing a weak interlayer coupling. This work has been supported by NRI-SWAN and Intel corporation.

Charge-Retraction Time-of-Flight Measurement for Organic Charge Transport Materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wallace, J.U.; Young, R.H.; Tang, C.W.

This describes an all-electrical technique, charge-retraction time-of-flight (CR-TOF), to measure charge carrier mobility through an organic layer. Carriers are injected and accumulated at a blocking interface, then retracted. The retraction current transient is nearly indistinguishable from a traditional time-of-flight photocurrent. The CR-TOF technique is validated by measurement of the hole mobility of two well-known compounds, 4,4',4"-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine and 4,4'-bis[N-1-napthyl)-N-phenylamino]biphenyl, utilizing 1,3,5-tris(N-phenylbenzimidazol-2-yl)-benzene as a hole-blocking layer.

High-performance and environmentally stable planar heterojunction perovskite solar cells based on a solution-processed copper-doped nickel oxide hole-transporting layer.

PubMed

Kim, Jong H; Liang, Po-Wei; Williams, Spencer T; Cho, Namchul; Chueh, Chu-Chen; Glaz, Micah S; Ginger, David S; Jen, Alex K-Y

2015-01-27

An effective approach to significantly increase the electrical conductivity of a NiOx hole-transporting layer (HTL) to achieve high-efficiency planar heterojunction perovskite solar cells is demonstrated. Perovskite solar cells based on using Cu-doped NiOx HTL show a remarkably improved power conversion efficiency up to 15.40% due to the improved electrical conductivity and enhanced perovskite film quality. General applicability of Cu-doped NiOx to larger bandgap perovskites is also demonstrated in this study. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A new type of artificial structure to achieve broadband omnidirectional acoustic absorption

NASA Astrophysics Data System (ADS)

Zheng, Li-Yang; Wu, Ying; Zhang, Xiao-Liu; Ni, Xu; Chen, Ze-Guo; Lu, Ming-Hui; Chen, Yan-Feng

2013-10-01

We present a design for a two-dimensional omnidirectional acoustic absorber that can achieve 98.6% absorption of acoustic waves in water, forming an effective acoustic black hole. This artificial black hole consists of an absorptive core coated with layers of periodically distributed polymer cylinders embedded in water. Effective medium theory describes the response of the coating layers to the acoustic waves. The polymer parameters can be adjusted, allowing practical fabrication of the absorber. Since the proposed structure does not rely on resonances, it is applicable to broad bandwidths. The design might be extended to a variety of applications.

Highly efficient and low voltage silver nanowire-based OLEDs employing a n-type hole injection layer.

PubMed

Lee, Hyungjin; Lee, Donghwa; Ahn, Yumi; Lee, Eun-Woo; Park, Lee Soon; Lee, Youngu

2014-08-07

Highly flexible and efficient silver nanowire-based organic light-emitting diodes (OLEDs) have been successfully fabricated by employing a n-type hole injection layer (HIL). The silver nanowire-based OLEDs without light outcoupling structures exhibited excellent device characteristics such as extremely low turn-on voltage (3.6 V) and high current and power efficiencies (44.5 cd A(-1) and 35.8 lm W(-1)). In addition, flexible OLEDs with the silver nanowire transparent conducting electrode (TCE) and n-type HIL fabricated on plastic substrates showed remarkable mechanical flexibility as well as device performance.

Gauge invariant spectral Cauchy characteristic extraction

NASA Astrophysics Data System (ADS)

Handmer, Casey J.; Szilágyi, Béla; Winicour, Jeffrey

2015-12-01

We present gauge invariant spectral Cauchy characteristic extraction. We compare gravitational waveforms extracted from a head-on black hole merger simulated in two different gauges by two different codes. We show rapid convergence, demonstrating both gauge invariance of the extraction algorithm and consistency between the legacy Pitt null code and the much faster spectral Einstein code (SpEC).

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al 2O 3 dielectric

DOE PAGES

J. M. Rafi; Lynn, D.; Pellegrini, G.; ...

2015-12-11

The radiation hardness and thermal stability of the electrical characteristics of atomic layer deposited Al 2O 3 layers to be used as passivation films for silicon radiation detectors with slim edges are investigated. To directly measure the interface charge and to evaluate its change with the ionizing dose, metal-oxide-silicon (MOS) capacitors implementing differently processed Al 2O 3 layers were fabricated on p-type silicon substrates. Qualitatively similar results are obtained for degradation of capacitance–voltage and current–voltage characteristics under gamma and proton irradiations up to equivalent doses of 30 Mrad and 21.07 Mrad, respectively. While similar negative charge densities are initially extractedmore » for all non-irradiated capacitors, superior radiation hardness is obtained for MOS structures with alumina layers grown with H 2O instead of O 3 as oxidant precursor. Competing effects between radiation-induced positive charge trapping and hydrogen release from the H 2O-grown Al 2O 3 layers may explain their higher radiation resistance. Finally, irradiated and non-irradiated MOS capacitors with differently processed Al 2O 3 layers have been subjected to thermal treatments in air at temperatures ranging between 100 °C and 200 °C and the thermal stability of their electrical characteristics has been evaluated. Partial recovery of the gamma-induced degradation has been noticed for O 3-grown MOS structures. Lastly, this can be explained by a trapped holes emission process, for which an activation energy of 1.38 ± 0.15 eV has been extracted.« less

Study of Laser Drilled Hole Quality of Yttria Stabilized Zirconia

NASA Astrophysics Data System (ADS)

Saini, Surendra K.; Dubey, Avanish K.; Pant, Piyush; Upadhyay, B. N.; Choubey, A.

2017-09-01

The Yttria Stabilized Zirconia ceramic is extensively used in aerospace, automotives, medical and microelectronics industries. These applications demand manufacturing of different macro and micro features with close tolerances in this material. To make miniature holes with accurate dimensions in advanced ceramics such as Yttria Stabilized Zirconia is very difficult due to its tailored attributes such as high toughness, hardness, strength, resistance to wear, corrosion and temperature. Due to inherent characteristics of laser drilling, researchers are working to fulfill the requirement of creation of micro holes in advanced ceramics. The present research investigates the laser drilling of 2 mm thick Yttria Stabilized Zirconia with the aim to achieve good micro holes with reduced geometrical inaccuracies and improved hole quality. The results show that multiple quality response comprising hole circularity, hole taper and recast layer thickness has been improved at optimally selected process parameters.

Electrical anisotropy of gas hydrate-bearing sand reservoirs in the Gulf of Mexico

USGS Publications Warehouse

Cook, Anne E.; Anderson, Barbara I.; Rasmus, John; Sun, Keli; Li, Qiming; Collett, Timothy S.; Goldberg, David S.

2012-01-01

We present new results and interpretations of the electricalanisotropy and reservoir architecture in gashydrate-bearingsands using logging data collected during the Gulf of MexicoGasHydrate Joint Industry Project Leg II. We focus specifically on sandreservoirs in Hole Alaminos Canyon 21 A (AC21-A), Hole Green Canyon 955 H (GC955-H) and Hole Walker Ridge 313 H (WR313-H). Using a new logging-while-drilling directional resistivity tool and a one-dimensional inversion developed by Schlumberger, we resolve the resistivity of the current flowing parallel to the bedding, R| and the resistivity of the current flowing perpendicular to the bedding, R|. We find the sandreservoir in Hole AC21-A to be relatively isotropic, with R| and R| values close to 2 Ω m. In contrast, the gashydrate-bearingsandreservoirs in Holes GC955-H and WR313-H are highly anisotropic. In these reservoirs, R| is between 2 and 30 Ω m, and R| is generally an order of magnitude higher. Using Schlumberger's WebMI models, we were able to replicate multiple resistivity measurements and determine the formation resistivity the gashydrate-bearingsandreservoir in Hole WR313-H. The results showed that gashydrate saturations within a single reservoir unit are highly variable. For example, the sand units in Hole WR313-H contain thin layers (on the order of 10-100 cm) with varying gashydrate saturations between 15 and 95%. Our combined modeling results clearly indicate that the gashydrate-bearingsandreservoirs in Holes GC955-H and WR313-H are highly anisotropic due to varying saturations of gashydrate forming in thin layers within larger sand units.

Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Yiping; Zhang, Zi-Hui; Tan, Swee Tiam; Hernandez-Martinez, Pedro Ludwig; Zhu, Binbin; Lu, Shunpeng; Kang, Xue Jun; Sun, Xiao Wei; Demir, Hilmi Volkan

2017-01-01

Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region Mg-doping method. Here we systematically analyze the effectiveness of different Mg-doping profiles ranging from the electron blocking layer to the active region. Numerical computations show that the Mg-doping decreases the valence band barrier for holes and thus enhances the hole transportation. The proposed depletion-region Mg-doping approach also increases the barrier height for electrons, which leads to a reduced electron overflow, while increasing the hole concentration in the p-GaN layer. Experimentally measured external quantum efficiency indicates that Mg-doping position is vitally important. The doping in or adjacent to the quantum well degrades the LED performance due to Mg diffusion, increasing the corresponding nonradiative recombination, which is well supported by the measured carrier lifetimes. The experimental results are well numerically reproduced by modifying the nonradiative recombination lifetimes, which further validate the effectiveness of our approach.

Novel Solid-State Solar Cell Based on Hole-Conducting MOF-Sensitizer Demonstrating Power Conversion Efficiency of 2.1.

PubMed

Ahn, Do Young; Lee, Deok Yeon; Shin, Chan Yong; Bui, Hoa Thi; Shrestha, Nabeen K; Giebeler, Lars; Noh, Yong-Young; Han, Sung-Hwan

2017-04-19

This work reports on designing of first successful MOF-sensitizer based solid-state photovoltaic device, perticularly with a meaningful output power conversion efficiency. In this study, an intrinsically conductive cobalt-based MOFs (Co-DAPV) formed by the coordination between Co (II) ions and a redox active di(3-diaminopropyl)-viologen (i.e., DAPV) ligand is investigated as sensitizer. Hall-effect measurement shows p-type conductivity of the Co-DAPV film with hole mobility of 0.017 cm 2 V -1 s -1 , suggesting its potential application as hole transporting sensitizer. Further, the energy levels of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of Co-DAPV are well-matched to be suitably employed for sensitizing TiO 2 . Thus, by layer-by-layer deposition of hole conducting MOF-sensitizer onto mesoporous TiO 2 film, a power conversion efficiency of as high as 2.1% is achieved, which exceeds the highest efficiency values of MOF-sensitized liquid-junction solar cells reported so far.

Ultrathin efficient perovskite solar cells employing a periodic structure of a composite hole conductor for elevated plasmonic light harvesting and hole collection

NASA Astrophysics Data System (ADS)

Long, Mingzhu; Chen, Zefeng; Zhang, Tiankai; Xiao, Yubin; Zeng, Xiaoliang; Chen, Jian; Yan, Keyou; Xu, Jianbin

2016-03-01

We developed a molecule/polymer composite hole transporting material (HTM) with a periodic microstructure for morphology replication of a corrugated Au electrode, which in combination plays a dual role in the optical and electronic enhancement of high performance perovskite solar cells (PSCs). The electro-optics revealed that perovskite couldn't readily extinct the red light even though the thickness increased to 370 nm, but we found that the quasi periodic microstructure composite (PMC) HTM in combination with the conformal Au electrode could promote the absorption through the enhanced cavity effects, leading to comparable absorption even using much thinner perovskite (240 nm). We identified that the cavity was the combination of Fabry-Pérot interferometer and surface plasmonic resonance, with light harvesting enhancement through surface plasmon polariton or waveguide modes that propagate in the plane of the perovskite layer. On the other hand, the PMC HTM increased hole conductivity by one order of magnitude with respect to standard spiro-OMeTAD HTM due to molecular packing and self-assembly, embodying traceable hole mobility and density elevation up to 3 times, and thus the hysteresis was greatly avoided. Owing to dual optical and electronic enhancement, the PMC PSC afforded high efficiency PSC using as thin as 240 nm perovskite layer, delivering a Voc of 1.05 V, Jsc of 22.9 mA cm-2, FF of 0.736, and efficiency amounting to 17.7% PCE, the highest efficiency with ultrathin perovskite layer.We developed a molecule/polymer composite hole transporting material (HTM) with a periodic microstructure for morphology replication of a corrugated Au electrode, which in combination plays a dual role in the optical and electronic enhancement of high performance perovskite solar cells (PSCs). The electro-optics revealed that perovskite couldn't readily extinct the red light even though the thickness increased to 370 nm, but we found that the quasi periodic microstructure composite (PMC) HTM in combination with the conformal Au electrode could promote the absorption through the enhanced cavity effects, leading to comparable absorption even using much thinner perovskite (240 nm). We identified that the cavity was the combination of Fabry-Pérot interferometer and surface plasmonic resonance, with light harvesting enhancement through surface plasmon polariton or waveguide modes that propagate in the plane of the perovskite layer. On the other hand, the PMC HTM increased hole conductivity by one order of magnitude with respect to standard spiro-OMeTAD HTM due to molecular packing and self-assembly, embodying traceable hole mobility and density elevation up to 3 times, and thus the hysteresis was greatly avoided. Owing to dual optical and electronic enhancement, the PMC PSC afforded high efficiency PSC using as thin as 240 nm perovskite layer, delivering a Voc of 1.05 V, Jsc of 22.9 mA cm-2, FF of 0.736, and efficiency amounting to 17.7% PCE, the highest efficiency with ultrathin perovskite layer. Electronic supplementary information (ESI) available: XRD patterns corresponding to the perovskite; AFM images of 3D PMC HTM perovskite solar cells; performance statistics for 3D PMC HTM; ultraviolet photoelectron spectra (UPS) of HTMs on FTO. See DOI: 10.1039/c5nr05042a

A structural health monitoring fastener for tracking fatigue crack growth in bolted metallic joints

NASA Astrophysics Data System (ADS)

Rakow, Alexi Schroder

Fatigue cracks initiating at fastener hole locations in metallic components are among the most common form of airframe damage. The fastener hole site has been surveyed as the second leading initiation site for fatigue related accidents of fixed wing aircraft. Current methods for inspecting airframes for these cracks are manual, whereby inspectors rely on non-destructive inspection equipment or hand-held probes to scan over areas of a structure. Use of this equipment often demands disassembly of the vehicle to search appropriate hole locations for cracks, which elevates the complexity and cost of these maintenance inspections. Improved reliability, safety, and reduced cost of such maintenance can be realized by the permanent integration of sensors with a structure to detect this damage. Such an integrated system of sensors would form a structural health monitoring (SHM) system. In this study, an Additive, Interleaved, Multi-layer Electromagnetic (AIME) sensor was developed and integrated with the shank of a fastener to form a SHM Fastener, a new SHM technology targeted at detection of fastener hole cracks. The major advantages of the SHM Fastener are its installation, which does not require joint layer disassembly, its capability to detect inner layer cracks, and its capability to operate in a continuous autonomous mode. Two methods for fabricating the proposed SHM Fastener were studied. The first option consisted of a thin flexible printed circuit film that was bonded around a thin metallic sleeve placed around the fastener shank. The second option consisted of coating sensor materials directly to the shank of a part in an effort to increase the durability of the sensor under severe loading conditions. Both analytical and numerical models were developed to characterize the capability of the sensors and provide a design tool for the sensor layout. A diagnostic technique for crack growth monitoring was developed to complete the SHM system, which consists of the sensor, data acquisition hardware, algorithm, and diagnostic display. The AIME sensor design, SHM Fastener, and complete SHM system are presented along with experimental results from a series of single-layer and bolted double lap joint aluminum laboratory specimens to validate the capability of these sensors to monitor metallic joints for fastener hole cracks. Fatigue cracks were successfully tracked to over 0.7 inches from the fastener hole in these tests. Sensor output obtained from single-layer fatigue specimens was compared with analytical predictions for fatigue crack growth versus cycle number showing a good correlation in trend between sensor output and predicted crack size.

Three-dimensional periodic dielectric structures having photonic Dirac points

DOEpatents

Bravo-Abad, Jorge; Joannopoulos, John D.; Soljacic, Marin

2015-06-02

The dielectric, three-dimensional photonic materials disclosed herein feature Dirac-like dispersion in quasi-two-dimensional systems. Embodiments include a face-centered cubic (fcc) structure formed by alternating layers of dielectric rods and dielectric slabs patterned with holes on respective triangular lattices. This fcc structure also includes a defect layer, which may comprise either dielectric rods or a dielectric slab with patterned with holes. This defect layer introduces Dirac cone dispersion into the fcc structure's photonic band structure. Examples of these fcc structures enable enhancement of the spontaneous emission coupling efficiency (the .beta.-factor) over large areas, contrary to the conventional wisdom that the .beta.-factor degrades as the system's size increases. These results enable large-area, low-threshold lasers; single-photon sources; quantum information processing devices; and energy harvesting systems.

Enhancing the performance of blue GaN-based light emitting diodes with double electron blocking layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Yao; Liang, Meng; Fu, Jiajia

2015-03-15

In this work, novel double Electron Blocking Layers for InGaN/GaN multiple quantum wells light-emitting diodes were proposed to mitigate the efficiency droop at high current density. The band diagram and carriers distributions were investigated numerically. The results indicate that due to a newly formed holes stack in the p-GaN near the active region, the hole injection has been improved and an uniform carriers distribution can be achieved. As a result, in our new structure with double Electron Blocking Layers, the efficiency droop has been reduced to 15.5 % in comparison with 57.3 % for the LED with AlGaN EBL atmore » the current density of 100 A/cm{sup 2}.« less

Organic Light Emitting Diodes with Opal Photonic Crystal Layer and Carbon Nanotube Anode

NASA Astrophysics Data System (ADS)

Ovalle Robles, Raquel; Del Rocio Nava, Maria; Williams, Christopher; Zhang, Mei; Fang, Shaoli; Lee, Sergey; Baughman, Ray; Zakhidov, Anvar

2007-03-01

We report electroluminescence intensity and spectral changes in light emission from organic light emitting diode (OLEDs) structures, which have thin transparent films of opal photonic crystal (PC). The anode in such PC-OLED is laminated on opal layer from free standing optically transparent multiwall carbon nanotubes (T-CNT) sheets made by dry spinning from CVD grown forests. Silica and polystyrene opal films were grown on glass substrates by vertical sedimentation in colloids in thermal baths and the particle size of opal spheres ranges from 300 nm to 450 nm. The use of T-CNTs, (coated by PEDOT-PSS to avoid shorting) as hole injector, allows to eliminate the use of vacuum deposition of metals and permits to achieve tunneling hole injection regime from CNT tips into Alq^3 emission layer

Glass-silicon column

DOEpatents

Yu, Conrad M.

2003-12-30

A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

Controlled surface oxidation of multi-layered graphene anode to increase hole injection efficiency in organic electronic devices

NASA Astrophysics Data System (ADS)

Han, Tae-Hee; Kwon, Sung-Joo; Seo, Hong-Kyu; Lee, Tae-Woo

2016-03-01

Ultraviolet ozone (UVO) surface treatment of graphene changes its sp2-hybridized carbons to sp3-bonded carbons, and introduces oxygen-containing components. Oxidized graphene has a finite energy band gap, so UVO modification of the surface of a four-layered graphene anode increases its surface ionization potential up to ∼5.2 eV and improves the hole injection efficiency (η) in organic electronic devices by reducing the energy barrier between the graphene anode and overlying organic layers. By controlling the conditions of the UVO treatment, the electrical properties of the graphene can be tuned to improve η. This controlled surface modification of the graphene will provide a way to achieve efficient and stable flexible displays and solid-state lighting.

Reversible Conversion of Dominant Polarity in Ambipolar Polymer/Graphene Oxide Hybrids

PubMed Central

Zhou, Ye; Han, Su-Ting; Sonar, Prashant; Ma, Xinlei; Chen, Jihua; Zheng, Zijian; Roy, V. A. L.

2015-01-01

The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. This hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits. PMID:25801827

Superradiant Instability and Backreaction of Massive Vector Fields around Kerr Black Holes.

PubMed

East, William E; Pretorius, Frans

2017-07-28

We study the growth and saturation of the superradiant instability of a complex, massive vector (Proca) field as it extracts energy and angular momentum from a spinning black hole, using numerical solutions of the full Einstein-Proca equations. We concentrate on a rapidly spinning black hole (a=0.99) and the dominant m=1 azimuthal mode of the Proca field, with real and imaginary components of the field chosen to yield an axisymmetric stress-energy tensor and, hence, spacetime. We find that in excess of 9% of the black hole's mass can be transferred into the field. In all cases studied, the superradiant instability smoothly saturates when the black hole's horizon frequency decreases to match the frequency of the Proca cloud that spontaneously forms around the black hole.

Film cooling effectiveness and heat transfer with injection through holes

NASA Technical Reports Server (NTRS)

Eriksen, V. L.

1971-01-01

An experimental investigation of the local film cooling effectiveness and heat transfer downstream of injection of air through discrete holes into a turbulent boundary layer of air on a flat plate is reported. Secondary air is injected through a single hole normal to the main flow and through both a single hole and a row of holes spaced at three diameter intervals with an injection angle of 35 deg to the main flow. Two values of the mainstream Reynolds number are used; the blowing rate is varied from 0.1 to 2.0. Photographs of a carbon dioxide-water fog injected into the main flow at an angle of 90 deg are also presented to show interaction between the jet and mainstream.

Undoped GaAs bilayers for exciton condensation experiments

NASA Astrophysics Data System (ADS)

Lilly, M. P.

2005-03-01

Experimental progress in transport studies of exciton condensation of in electron and hole bilayers at high magnetic fields [1,2] has shown this novel physics can be observed. Fabrication of the bipolar electron-hole bilayers for zero field studies of exciton condensation still remains elusive. We describe a series of experiments on undoped GaAs/AlGaAs heterostructures with the motivation of making electron-hole bilayers. In these undoped devices, external electric fields induce carriers rather than the traditional doping techniques. Single layer electron (or hole) devices demonstrate a high mobility over a wide range of density. More recently, fully undoped bilayers have been made where the density in each layer is independently controlled with gates on the top and bottom of the bilayer. In this talk we present high field transport of undoped electron-electron bilayers, and describe recent progress towards extending the fabrication techniques to creating electron-hole bilayers for exciton condensation studies at zero magnetic field. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy under contract DE-AC04-94AL85000. 1. M. Kellogg, J. P. Eisenstein, L. N. Pfeiffer, and K. W. West, Phys. Rev. Lett. 93 036801 (2004). 2. E. Tutoc, M. Shayegan, and D. A. Huse, Phys. Rev. Lett. 93, 036802 (2004).

Role of Near Substrate and Bulk Polymer Morphology on Out-of-Plane Space-Charge Limited Hole Mobility.

PubMed

Turner, Johnathan; Gadisa, Abay

2016-12-07

Charge transport is a central issue in all types of organic electronic devices. In organic films, charge transport is crucially limited by film microstructure and the nature of the substrate/organic interface interactions. In this report, we discuss the influence of active layer thickness on space-charge limited hole transport in pristine polymer and polymer/fullerene bulk heterojunction thin films (∼15-300 nm) in a diode structure. According to the results, the out-of-plane hole mobility in pristine polymers is sensitive to the degree of polymer chain aggregation. Blending the polymers with a fullerene molecule does not change the trend of hole mobility if the polymer tends to make an amorphous structure. However, employing an aggregating polymer in a bulk heterojunction blend gives rise to a marked difference in charge carrier transport behavior compared to the pristine polymer and this difference is sensitive to active layer thickness. In aggregating polymer films, the thickness-dependent interchain interaction was found to have direct impact on hole mobility. The thickness-dependent mobility trend was found to correspond well with the trend of fill factors of corresponding bulk heterojunction solar cells. This investigation has a vital implication for material design and the development of efficient organic electronic devices, including solar cells and light-emitting diodes.

Preliminary assessment of in-situ geomechanical characteristics in drill hole USW G-1, Yucca Mountain, Nevada

USGS Publications Warehouse

Ellis, William L.; Swolfs, Henri S.

1983-01-01

Observations made during drilling and subsequent testing of the USW G-1 drill hole, Yucca Mountain, Nevada, provide qualitative insights into the in- situ geomechanical characteristics of the layered tuff units penetrated by the hole. Substantial drilling-fluid losses, and the occurrence of drilling-induced fracturing, are understandable in terms of the low, minimum horizontal stress magnitudes interpreted from six hydraulic-fracturing stress measurements conducted between hole depths of 640 and 1,300 meters. Although not confirmed directly by the hydraulic-fracturing data, other observations suggest that the minimum stress magnitudes in the more densely welded and brittle tuff layers may be even smaller than in the less welded and more ductile rocks. Stress-induced borehole ellipticity observed along most of the length of USW G-1 indicates that the horizontal stress components are not equal, and that the concentration of these stresses around the hole is sufficient to locally exceed the yield strength of the rock. The low, minimum horizontal stress magnitudes, perhaps variable with lithology, and the indications from borehole ellipticity of a high in-situ stress/strength ratio, indicate the need for further studies to characterize the structural and geomechanical properties of the rocks at depth in Yucca Mountain.

The feasibility of using solution-processed aqueous La2O3 as effective hole injection layer in organic light-emitting diode

NASA Astrophysics Data System (ADS)

Zhang, Yan; Li, Wanshu; Zhang, Ting; Yang, Bo; Zheng, Qinghong; Xu, Jiwen; Wang, Hua; Wang, Lihui; Zhang, Xiaowen; Wei, Bin

2018-01-01

Low-cost and scalable manufacturing boosts organic electronic devices with all solution process. La2O3 powders and corresponding aqueous solutions are facilely synthesized. Atomic force microscopy and scanning electron microscopy measurements show that solution-processed La2O3 behaves superior film morphology. X-ray diffraction and X-ray photoelectron spectroscopy measurements verify crystal phase and typical La signals. In comparison with the most widely-used hole injection layers (HILs) of MoOx and poly(ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), enhanced luminous efficiency is observed in organic light-emitting diode (OLED) using solution-processed La2O3 HIL. Current-voltage, impedance-voltage and phase angle-voltage transition curves clarify that solution-processed La2O3 behaves nearly comparable hole injection capacity to MoOx and PEDOT:PSS, and favorably tailors carrier balance. Moreover, the hole injection mechanism of solution-processed La2O3 is proven to be predominantly controlled by Fowler-Nordheim tunneling process and the hole injection barrier height between ITO and NPB via La2O3 interlayer is estimated to be 0.098 eV. Our experiments provide a feasible application of La2O3 in organic electronic devices with solution process.

Oxide-cladding aluminum nitride photonic crystal slab: Design and investigation of material dispersion and fabrication induced disorder

DOE Office of Scientific and Technical Information (OSTI.GOV)

Melo, E. G., E-mail: emerdemelo@usp.br; Alvarado, M. A.; Carreño, M. N. P.

2016-01-14

Photonic crystal slabs with a lower-index material surrounding the core layer are an attractive choice to circumvent the drawbacks in the fabrication of membranes suspended in air. In this work we propose a photonic crystal (PhC) slab structure composed of a triangular pattern of air holes in a multilayer thin film of aluminum nitride embedded in silicon dioxide layers designed for operating around 450 nm wavelengths. We show the design of an ideal structure and analyze the effects of material dispersion based on a first-order correction perturbation theory approach using dielectric functions obtained by experimental measurements of the thin film materials.more » Numerical methods were used to investigate the effects of fabrication induced disorder of typical nanofabrication processes on the bandgap size and spectral response of the proposed device. Deviation in holes radii and positions were introduced in the proposed PhC slab model with a Gaussian distribution profile. Impacts of slope in holes sidewalls that might result from the dry etching of AlN were also evaluated. The results show that for operation at the midgap frequency, slope in holes sidewalls is more critical than displacements in holes sizes and positions.« less

Evidence of Spin and Energy Extraction in a Galactic Black Hole Candidate: The XMM-NEWTON/EPIC SPECTRUM of XTE 11650-500

NASA Technical Reports Server (NTRS)

Miller, J. M.; Fabian, A. C.; Wunands, R.; Reynolds, C. S.; Ehle, M.; Freyberg, M. J.; VanDerKlis, M.; Lewin, W. H. G.; Sanchez-Fernandez, C.; Castro-Tirado, A. J.

2002-01-01

We observed the Galactic black hole candidate XTE J1650-500 early in its fall of 2001 outburst with the XMM-Newton European Photon Imaging pn Camera (EPIC-pn). The observed spectrum is consistent with the source having been in the very high state. We h d a broad, skewed Fe Kar emission line that suggests the primary in this system may be a Kerr black hole and that indicates a steep disk emissivity profile that is hard to explain in terms of a standard accretion disk model. These results are quantitatively and qualitatively similar to those from an XMM-Newton observation of the Seyfert galaxy MCG -6-30-15. The steep emissivity in MCG -6-30-15 may be explained by the extraction and dissipation of rotational energy from a black hole with nearly maximal angular momentum or from material in the plunging region via magnetic connections to the inner accretion disk. If this process is at work in both sources, an exotic but fundamental general relativistic prediction may be confirmed across a factor of l0(exp 6) in black hole mass. We discuss these results in terms of the accretion flow geometry in stellar-mass black holes and the variety of enigmatic phenomena often observed in the very high state.

Ion extraction capabilities of two-grid accelerator systems. M.S. Thesis

NASA Technical Reports Server (NTRS)

Rovang, D. C.; Wilbur, P. J.

1984-01-01

An experimental investigation into the ion extraction capabilities of two-grid accelerator systems common to electrostatic ion thrusters is described. This work resulted in a large body of experimental data which facilitates the selection of the accelerator system geometries and operating parameters necessary to maximize the extracted ion current. Results suggest that the impingement-limited perveance is not dramatically affected by reductions in screen hole diameter to 0.5 mm. Impingement-limited performance is shown to depend most strongly on grid separation distance, accelerator hole diameter ratio, the discharge-to-total accelerating voltage ratio, and the net-to-total accelerating voltage ratio. Results obtained at small grid separation ratios suggest a new grid operating condition where high beam current per hole levels are achieved at a specified net accelerating voltage. It is shown that this operating condition is realized at an optimum ratio of net-to-total accelerating voltage ratio which is typically quite high. The apparatus developed for this study is also shown to be well suited measuring the electron backstreaming and electrical breakdown characteristics of two-grid accelerator systems.

An experimental investigation on the effects of freestream turbulence intensity on film cooling effectiveness and heat transfer coefficient for an anti-vortex hole

NASA Astrophysics Data System (ADS)

Hayes, Stephen Andrew

Film cooling is used to thermally protect combustor and turbine components by creating a layer of relatively cooler air than the freestream air to insulate the components from the hot freestream gases. This relatively cooler air is taken from upstream in the high-pressure compressor section at a loss to the engine efficiency, and therefore must be used as effectively as possible. The efficiency gained from increasing the turbine inlet temperature outweighs the loss due to extracting air from the compressor section if the cooling air is used effectively. A novel anti-vortex hole (AVH) geometry has been investigated experimentally through a transient infrared thermography technique to study the film cooling effectiveness and surface convective heat transfer coefficients for varying blowing ratio and freestream turbulence intensity. A major concern with the AVH will be how the secondary jets counteract the main counter rotating vortex (CRV) pair at increased freestream turbulence levels. This is the first experimental facility to study the effects of higher freestream turbulence levels on an AVH geometry. Furthermore, this is the first experimental investigation to report centerline film cooling effectiveness and the convective heat transfer coefficient that had not been reported in prior studies. The AVH geometry is designed with two secondary holes stemming from a main cooling hole; these holes attempt to diffuse the coolant jet and mitigate the vorticity produced by conventional straight holes. This geometry shows improved results at low turbulence intensities compared to conventional straight holes. Three freestream turbulence intensities of 1, 7.5, and 11.7% were investigated at blowing ratios of 0.5, 1.0, 1.5, and 2.0 to form a test matrix of twelve different test conditions. Results showed that the higher freestream turbulence conditions were beneficial in the performance of the AVH. Increasing the blowing ratio at all turbulence levels also improved film cooling effectiveness both span-averaged and on the centerline. The highest performing case was at a turbulence intensity of 7.5% and a blowing ratio of 2.0. The 11.7% cases outperformed the 1% cases, but it appears that at 11.7% cases that the higher freestream turbulence reduces the performance of the secondary holes compared to the 7.5% cases. Increasing the blowing ratio and turbulence intensity will result in a higher heat transfer coefficient, and thus must be taken into account for future designs.

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency.

PubMed

Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

2018-04-24

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

NASA Astrophysics Data System (ADS)

Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

2018-04-01

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

Electroactive polymers containing 3-arylcarbazolyl units as hole transporting materials for OLEDs

NASA Astrophysics Data System (ADS)

Krucaite, G.; Liu, L.; Tavgeniene, D.; Peciulyte, L.; Grazulevicius, J. V.; Xie, Z.; Zhang, B.; Grigalevicius, S.

2015-04-01

Monomers and their polymers containing 3-arylcarbazolyl electrophores have been synthesized by the multi-step synthetic route. The materials were characterized by thermo-gravimetric analysis, differential scanning calorimetry and electron photoemission technique. The polymers represent materials of high thermal stability having initial thermal degradation temperatures in the range of 331-411 °C. The glass transition temperatures of the amorphous polymeric materials were in the rage of 148-175 °C. The electron photoemission spectra of thin layers of monomers showed ionization potentials in the range of 5.6-5.65 eV. Hole-transporting properties of the polymers were tested in the structures of organic light emitting diodes with Alq3 as the green emitter. The device containing hole-transporting layers of polyether with 3-naphthylcarbazolyl groups exhibited the best overall performance with a maximum current efficiency of 3.3 cd/A and maximum brightness of about 1000 cd/m2.

Conjugated polyelectrolyte hole transport layer for inverted-type perovskite solar cells

PubMed Central

Choi, Hyosung; Mai, Cheng-Kang; Kim, Hak-Beom; Jeong, Jaeki; Song, Seyeong; Bazan, Guillermo C.; Kim, Jin Young; Heeger, Alan J.

2015-01-01

Organic–inorganic hybrid perovskite materials offer the potential for realization of low-cost and flexible next-generation solar cells fabricated by low-temperature solution processing. Although efficiencies of perovskite solar cells have dramatically improved up to 19% within the past 5 years, there is still considerable room for further improvement in device efficiency and stability through development of novel materials and device architectures. Here we demonstrate that inverted-type perovskite solar cells with pH-neutral and low-temperature solution-processable conjugated polyelectrolyte as the hole transport layer (instead of acidic PEDOT:PSS) exhibit a device efficiency of over 12% and improved device stability in air. As an alternative to PEDOT:PSS, this work is the first report on the use of an organic hole transport material that enables the formation of uniform perovskite films with complete surface coverage and the demonstration of efficient, stable perovskite/fullerene planar heterojunction solar cells. PMID:26081865

Ethanol extract of Peperomia pellucida (Piperaceae) promotes fracture healing by an anabolic effect on osteoblasts.

PubMed

Ngueguim, Florence Tsofack; Khan, Mohd Parvez; Donfack, Jean Hubert; Tewari, Deepshikha; Dimo, Theophile; Kamtchouing, Pierre; Maurya, Rakesh; Chattopadhyay, Naibedya

2013-06-21

The whole plant or some part of Peperomia pellucida (L.) HBK is used in some parts of Cameroon as a treatment for fracture healing. To evaluate the effect of ethanolic extracts of Peperomia pellucida (L.), a Cameroonian medicinal plant on bone regeneration following bone and marrow injury, and determine the mode of action. Ethanol extract of Peperomia pellucida was administered at 100 and 200mg/kg doses orally to adult female Sprague-Dawley rats having a drill hole injury (0.8mm) in the femur diaphysis. Vehicle (gum-acacia in distilled water) was given to the control group. After 12 days of treatment, animals were euthanized and femur bones collected. Confocal microscopy of calcein labeling at the drill hole site was performed to evaluate bone regeneration. 3-D microarchitecture of drill hole site was analyzed by micorocomputed tomography. Osteogenic effects of the extract were evaluated by assessing mineralized nodule formation of bone marrow stromal cells and expression of osteogenic genes (mRNA level of type-1 collagen, bone morphogenetic protein-2 and osteocalcin genes) in the femur. Ethanol extract from Peperomia Pellucida (L.) dose-dependently induced bone regeneration at the fracture site. At 200mg/kg dose, the extract significantly increased mineral deposition compared to controls. The extract also improved microarchitecture of the regenerating bone evident from increased bone volume fraction, trabecular thickness, trabecular number, and decreased trabecular separation and structure model index. In addition, the extract increased the formation of mineralized nodules from the bone marrow stromal cells. Furthermore, the extract induced the expression of osteogenic genes in the femur including type 1 collagen, osteocalcin and BMP-2, compared to control. Ethanolic extract of P. pellucid (L.) accelerates fracture repair in rats via stimulatory effects on osteoblast differentiation and mineralization, thereby justifying its traditional use. Copyright © 2013 Elsevier Ireland Ltd. All rights reserved.

A Study to Analyze the Permeation of High Density Gases and Propellant Vapors Through Single Layer Teflon or Teflon Structure Materials and Laminations. Volume 1

NASA Technical Reports Server (NTRS)

Johnson, R. L.; Young, Donald L. (Technical Monitor)

1967-01-01

This report contains the results of a fifteen month analytical and experimental study of the leakage rate of the pressurant gases (N2, He) and the propellant vapors (N2O4,N2H4) through bladder structures consisting of two layers of Teflon separated by a metallic foil diffusion barrier containing microscopic or larger holes. Results were obtained for the steady state leakage rate through circular holes and long rectangular openings in the barrier for arbitrary thicknesses of the two Teflon layers. The effect of hole shape and relative hole position on the leakage rate were studied. The transient problem was analyzed and it was shown that steady state calculations are adequate for estimating the leakage rate. A computer program entitled "Diffusion Analyzer Program" was developed to calculate the leakage rate, both transient and steady state. Finally, the analytical results were compared to experimentally determined values of the leakage rate through a model laminated bladder structure. The results of the analysis are in good agreement with experiment. The experimental effort (Part II of the Bladder Permeation Program) measured the solubility, diffusion coefficient and permeability of helium, nitrogen and nitrogen tetroxide vapor through Teflon TFE and FEP membranes. Data were obtained in the temperature range of 25 to 100 C at pressures ranging from near vacuum to about 20 atmospheres. Results of the experimental effort were compared with the limited data previously reported. As a verification to the applicability of results to actual bladder systems, counter diffusion tests were performed with a laminated sample containing aluminum foil with a selected group of holes.