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Sample records for hot wall epitaxial

  1. Hot Wall Epitaxy And Characterization Of Bismuth And Antimony Thin Films On Barium Fluoride Substrates

    NASA Astrophysics Data System (ADS)

    Collazo, Ramon; Dalmau, Rafael; Martinez, Antonio

    1998-03-01

    We have grown thin films of bismuth and antimony using hot wall epitaxy. The epitaxial films were grown on (111)-BaF2 substrates. The chemical integrity of the films was established using Auger electron spectroscopy and X ray Photoelectron Spectroscopy. The thickness of the films was measured using an atomic force microscope to establish their growth rate. The crystallographic properties of the films were assessed using x-ray diffraction techniques. Both bismuth and antimony thin films were found to be oriented with the [003] direction perpendicular to the plane of the films. Pole figures of both types of films indicate the epitaxial nature of the films. Bi/Sb multilayer structures were grown using the same growth technique. We will report on the results of the characterization of these films as well as on the growth apparatus and process. Work supported in part by EPSCoR-NSF Grant EHR-9108775 and NCRADA-NSWCDD-92-01.

  2. Hydride vapor phase epitaxy of AlN using a high temperature hot-wall reactor

    NASA Astrophysics Data System (ADS)

    Baker, Troy; Mayo, Ashley; Veisi, Zeinab; Lu, Peng; Schmitt, Jason

    2014-10-01

    Aluminum nitride (AlN) was grown on c-plane sapphire substrates by hydride vapor phase epitaxy (HVPE). The experiments utilized a two zone inductively heated hot-wall reactor. The surface morphology, crystal quality, and growth rate were investigated as a function of growth temperature in the range of 1450-1575 °C. AlN templates grown to a thickness of 1 μm were optimized with double axis X-ray diffraction (XRD) rocking curve full width half maximums (FWHMs) of 135″ for the (002) and 513″ for the (102).

  3. Simulation for deposition of cadmium telluride thin films in hot wall epitaxial system using Monte Carlo technique

    NASA Astrophysics Data System (ADS)

    Venkatachalam, T.; Ganesan, S.; Sakthivel, K.

    2006-04-01

    The molecular flow in the hot wall epitaxial system has been studied by computer simulation using the Monte Carlo technique for the deposition of CdTe thin films. The number of wall collisions, intermolecular collisions, direct transmissions, number of molecules and flux density distributions along each volume of the tube, with different source temperatures and wall temperatures for various lengths and radii of the hot wall setup, have been simulated, then the optimal deposition conditions for the thermodynamic equilibrium of vapour transport are determined and experimentally validated.

  4. High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

    NASA Astrophysics Data System (ADS)

    Chowdhury, Iftekhar; Chandrasekhar, M. V. S.; Klein, Paul B.; Caldwell, Joshua D.; Sudarshan, Tangali

    2011-02-01

    Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0 0 0 1) 8° off-axis substrates. We discuss the use of dichlorosilane as the Si-precursor for 4H-SiC epitaxial growth as it provides the most direct decomposition route into SiCl 2, which is the predominant growth species in chlorinated chemistries. A specular surface morphology was attained by limiting the hydrogen etch rate until the system was equilibrated at the desired growth temperature. The RMS roughness of the grown films ranged from 0.5-2.0 nm with very few morphological defects (carrots, triangular defects, etc.) being introduced, while enabling growth rates of 30-100 μm/h, 5-15 times higher than most conventional growths. Site-competition epitaxy was observed over a wide range of C/Si ratios, with doping concentrations <1×10 14 cm -3 being recorded. X-ray rocking curves indicated that the epilayers were of high crystallinity, with linewidths as narrow as 7.8 arcsec being observed, while microwave photoconductive decay (μPCD) measurements indicated that these films had high injection (ambipolar) carrier lifetimes in the range of 2 μs.

  5. Growth and photocurrent characteristics of the photoconductive MnAl2S4 layers grown by hot-wall epitaxy method

    NASA Astrophysics Data System (ADS)

    You, S. H.; Hong, K. J.; Jeong, T. S.; Lim, K. Y.; Youn, C. J.

    2014-10-01

    The epitaxial growth of the photoconductive MnAl2S4 with a layered-type rhombohedral structure was first achieved by means of the hot-wall epitaxy method. From the Hall effect measurement, two dominant scattering mechanisms on the mobility were extracted. One was an acoustic phonon scattering caused by lattice vibrations at the high-temperature range of T>100 K and the other one was an impurity ion scattering at the low-temperature range of T<100 K. Also, from the relation between the reciprocal temperature and the carrier concentration, two activation energies were evaluated to be the deep level of 83.1 and a shallow level of 14.1 meV at high-temperature and middle-temperature ranges, respectively. From the photocurrent (PC) measurement, the A, B, and C peaks were observed at whole temperature range. The electronic origin of these three peaks were caused by the band-to-band transitions from the valence band states of Γ4(z), Γ5(x), and Γ5(y) to the conduction band state of Γ1(s), respectively. Thus, the parameters of the crystal-field and the spin-orbit splitting were directly extracted by means of PC spectroscopy, and those values were 3.5 and 39.9 meV, respectively. The band gap energies estimated from PC and absorption measurements were well expressed by Eg(T)=Eg(0)-2.80×10-4T2/(T+287), where Eg(0) were found to be 3.7920, 3.7955, and 3.8354 eV at the valence band states of Γ4(z), Γ5(x), and Γ5(y), respectively.

  6. Spectral behavior of the temperature-dependent photoresponse of BaAl2S4 layers grown by using hot-wall epitaxy

    NASA Astrophysics Data System (ADS)

    Jeong, J. W.; Hong, K. J.; Jeong, T. S.; Youn, C. J.

    2016-08-01

    The characteristic photocurrent (PC) property of BaAl2S4 layers grown by using hot-wall epitaxy was investigated. With decreasing temperature, the PC peaks position shifted toward the short-wavelength region and its intensity decreased dramatically. The energy variation of the PC peaks shift at different temperatures could be matched well by using E g ( T) = E g (0) - 7.556 × 10-4 T 2/( T + 523), where E g (0) was 4.0596, 4.1053, and 4.1094 eV corresponding to Γ4( z), Γ5( y), and Γ5( x) in the valence band in order of increasing energy, respectively. Thus, by the selection rule, the crystal field and the spin-orbit splitting were found to be 47.5 and -5.9 meV, respectively, through PC spectroscopy measurement. From the negative result for the spin-orbit parameter, the middle Γ5( x) and the lowest Γ5( y) levels in the valence band were found to be interchanged. By using the relation between the logarithm of the PC density and the reciprocal temperature, we extracted the dominant trap level as 23.2 in the high-temperature region and 5.4 meV in the low-temperature region. Consequently, we found that the dramatic decrease on the PC intensity was caused by these trapping centers.

  7. Element substitution from substrates in Bi2Se3, Bi2Te3 and Sb2Te3 overlayers deposited by hot wall epitaxy

    NASA Astrophysics Data System (ADS)

    Takagaki, Y.; Jahn, U.; Jenichen, B.; Berlin, K.; Kong, X.; Biermann, K.

    2014-09-01

    In depositing Bi2Se3, Bi2Te3 or Sb2Te3 layers on certain substrates by hot wall epitaxy, the Bi and Sb atoms in the layers are replaced by the atoms supplied from the substrates. We extend our exploration on this substitution phenomenon for a number of combinations of the layer and the substrate to infer the factors that determine the occurrence of the substitution. Using a series of Ga- and In-based III-V substrates, it is evidenced that the group III atoms substitute the group V overlayer atoms when the bonds in the substrates are weak. We demonstrate that Ag triggers the substitution more effectively than Cu as a catalyst. The competition between the catalyst-induced substitutions on ternary alloy substrates shows that the dependence on the bond strength is not as strong as to be exclusive. Additionally, defectiveness around the interface between a semicoherently grown α-In2Se3 layer produced by the substitution and the InAs substrate is demonstrated. The cathodeluminescence properties are also provided focusing on the dependence on the phase of In2Se3.

  8. Enhancement of the quality of InAsSb epilayers using InAsSb graded and InSb buffer layers grown by hot wall epitaxy

    NASA Astrophysics Data System (ADS)

    Nakamura, S.; Jayavel, P.; Kobayashi, Y.; Arafune, K.; Koyama, T.; Kumagawa, M.; Hayakawa, Y.

    2005-10-01

    We have investigated the structural and electrical properties of InAsxSb1-x epilayers grown on GaAs(0 0 1) substrates by hot wall epitaxy. The epilayers were grown on an InAsSb graded layer and an InSb buffer layer. The arsenic composition (x) of the InAsxSb1-x epilayer was calculated using x-ray diffraction and found to be 0.5. The graded layers were grown with As temperature gradients of 2 and 0.5 °C min-1. The three-dimensional (3D) island growth due to the large lattice mismatch between InAsSb and GaAs was observed by scanning electron microscopy. As the thicknesses of the InAsSb graded layer and the InSb buffer layer are increased, a transition from 3D island growth to two-dimensional plateau-like growth is observed. The x-ray rocking curve measurements indicate that full-width at half-maximum values of the epilayers were decreased by using the graded and buffer layers. A dramatic enhancement of the electron mobility of the grown layers was observed by Hall effect measurements.

  9. Lateral Growth Expansion of 4H/6H-SiC m-plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy

    NASA Technical Reports Server (NTRS)

    Trunek, Andrew J.; Neudeck, Philip G.; Woodworth, Andrew A.; Powell, J. A.; Spry, David J.; Raghothamachar, Balaji; Dudley, Michael

    2011-01-01

    Lateral expansion of small mixed polytype 4H/6H-SiC slivers were realized by hot wall chemical vapor deposition (HWCVD). Small slivers cut from m-oriented ..11..00.. SiC boule slices containing regions of 4H and 6H SiC were exposed to HWCVD conditions using standard silane/propane chemistry for a period of up to eight hours. The slivers exhibited approximately 1500 microns (1.5 mm) of total lateral expansion. Initial analysis by synchrotron white beam x-ray topography (SWBXT) confirms, that the lateral growth was homoepitaxial, matching the polytype of the respective underlying region of the seed sliver.

  10. Study of defect structures in 6H-SiC a/m-plane pseudofiber crystals grown by hot-wall CVD epitaxy

    SciTech Connect

    Goue, Ouloide Y.; Raghothamachar, Balaji; Yang, Yu; Guo, Jianqiu; Dudley, Michael; Kisslinger, Kim; Trunek, Andrew J.; Neudeck, Philip G.; Spry, David J.; Woodworth, Andrew A.

    2015-11-25

    Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC proposed by researchers at NASA Glenn Research Center, called large tapered crystal (LTC) growth, based on axial fiber growth followed by lateral expansion, could produce SiC boules with potentially as few as one threading screw dislocation per wafer. In this study, the lateral expansion aspect of LTC growth is addressed through analysis of lateral growth of 6H-SiC a/m-plane seed crystals by hot-wall chemical vapor deposition. Preliminary synchrotron white-beam x-ray topography (SWBXT) indicates that the as-grown boules match the polytype structure of the underlying seed and have a faceted hexagonal morphology with a strain-free surface marked by steps. SWBXT Laue diffraction patterns of transverse and axial slices of the boules reveal streaks suggesting the existence of stacking faults/polytypes, and this is confirmed by micro-Raman spectroscopy. Transmission x-ray topography of both transverse and axial slices reveals inhomogeneous strains at the seed–epilayer interface and linear features propagating from the seed along the growth direction. Micro-Raman mapping of an axial slice reveals that the seed contains high stacking disorder, while contrast extinction analysis (g·b and g·b×l) of the linear features reveals that these are mostly edge-type basal plane dislocations. Further high-resolution transmission electron microscopy investigation of the seed–homoepilayer interface also reveals nanobands of different SiC polytypes. A model for their formation mechanism is proposed. Lastly, the implication of these results for improving the LTC growth process is addressed.

  11. Study of Defect Structures in 6H-SiC a/ m-Plane Pseudofiber Crystals Grown by Hot-Wall CVD Epitaxy

    NASA Astrophysics Data System (ADS)

    Goue, Ouloide Y.; Raghothamachar, Balaji; Yang, Yu; Guo, Jianqiu; Dudley, Michael; Kisslinger, Kim; Trunek, Andrew J.; Neudeck, Philip G.; Spry, David J.; Woodworth, Andrew A.

    2016-04-01

    Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC proposed by researchers at NASA Glenn Research Center, called large tapered crystal (LTC) growth, based on axial fiber growth followed by lateral expansion, could produce SiC boules with potentially as few as one threading screw dislocation per wafer. In this study, the lateral expansion aspect of LTC growth is addressed through analysis of lateral growth of 6H-SiC a/ m-plane seed crystals by hot-wall chemical vapor deposition. Preliminary synchrotron white-beam x-ray topography (SWBXT) indicates that the as-grown boules match the polytype structure of the underlying seed and have a faceted hexagonal morphology with a strain-free surface marked by steps. SWBXT Laue diffraction patterns of transverse and axial slices of the boules reveal streaks suggesting the existence of stacking faults/polytypes, and this is confirmed by micro-Raman spectroscopy. Transmission x-ray topography of both transverse and axial slices reveals inhomogeneous strains at the seed-epilayer interface and linear features propagating from the seed along the growth direction. Micro-Raman mapping of an axial slice reveals that the seed contains high stacking disorder, while contrast extinction analysis (g· b and g· b× l) of the linear features reveals that these are mostly edge-type basal plane dislocations. Further high-resolution transmission electron microscopy investigation of the seed-homoepilayer interface also reveals nanobands of different SiC polytypes. A model for their formation mechanism is proposed. Finally, the implication of these results for improving the LTC growth process is addressed.

  12. Study of defect structures in 6H-SiC a/m-plane pseudofiber crystals grown by hot-wall CVD epitaxy

    DOE PAGESBeta

    Goue, Ouloide Y.; Raghothamachar, Balaji; Yang, Yu; Guo, Jianqiu; Dudley, Michael; Kisslinger, Kim; Trunek, Andrew J.; Neudeck, Philip G.; Spry, David J.; Woodworth, Andrew A.

    2015-11-25

    Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC proposed by researchers at NASA Glenn Research Center, called large tapered crystal (LTC) growth, based on axial fiber growth followed by lateral expansion, could produce SiC boules with potentially as few as one threading screw dislocation per wafer. In this study, the lateral expansion aspect of LTC growth is addressed through analysis of lateral growth of 6H-SiC a/m-plane seed crystals by hot-wall chemical vapor deposition. Preliminary synchrotron white-beam x-ray topography (SWBXT) indicates that the as-grown boules match themore » polytype structure of the underlying seed and have a faceted hexagonal morphology with a strain-free surface marked by steps. SWBXT Laue diffraction patterns of transverse and axial slices of the boules reveal streaks suggesting the existence of stacking faults/polytypes, and this is confirmed by micro-Raman spectroscopy. Transmission x-ray topography of both transverse and axial slices reveals inhomogeneous strains at the seed–epilayer interface and linear features propagating from the seed along the growth direction. Micro-Raman mapping of an axial slice reveals that the seed contains high stacking disorder, while contrast extinction analysis (g·b and g·b×l) of the linear features reveals that these are mostly edge-type basal plane dislocations. Further high-resolution transmission electron microscopy investigation of the seed–homoepilayer interface also reveals nanobands of different SiC polytypes. A model for their formation mechanism is proposed. Lastly, the implication of these results for improving the LTC growth process is addressed.« less

  13. Structural Characterization of Lateral-grown 6H-SiC am-plane Seed Crystals by Hot Wall CVD Epitaxy

    NASA Technical Reports Server (NTRS)

    Goue, Ouloide Yannick; Raghothamachar, Balaji; Dudley, Michael; Trunek, Andrew J.; Neudeck, Philip G.; Woodworth, Andrew A.; Spry, David J.

    2014-01-01

    The performance of commercially available silicon carbide (SiC) power devices is limited due to inherently high density of screw dislocations (SD), which are necessary for maintaining polytype during boule growth and commercially viable growth rates. The NASA Glenn Research Center (GRC) has recently proposed a new bulk growth process based on axial fiber growth (parallel to the c-axis) followed by lateral expansion (perpendicular to the c-axis) for producing multi-faceted m-plane SiC boules that can potentially produce wafers with as few as one SD per wafer. In order to implement this novel growth technique, the lateral homoepitaxial growth expansion of a SiC fiber without introducing a significant number of additional defects is critical. Lateral expansion is being investigated by hot wall chemical vapor deposition (HWCVD) growth of 6H-SiC am-plane seed crystals (0.8mm x 0.5mm x 15mm) designed to replicate axially grown SiC single crystal fibers. The post-growth crystals exhibit hexagonal morphology with approximately 1500 m (1.5 mm) of total lateral expansion. Preliminary analysis by synchrotron white beam x-ray topography (SWBXT) confirms that the growth was homoepitaxial, matching the polytype of the respective underlying region of the seed crystal. Axial and transverse sections from the as grown crystal samples were characterized in detail by a combination of SWBXT, transmission electron microscopy (TEM) and Raman spectroscopy to map defect types and distribution. X-ray diffraction analysis indicates the seed crystal contained stacking disorders and this appears to have been reproduced in the lateral growth sections. Analysis of the relative intensity for folded transverse acoustic (FTA) and optical (FTO) modes on the Raman spectra indicate the existence of stacking faults. Further, the density of stacking faults is higher in the seed than in the grown crystal. Bundles of dislocations are observed propagating from the seed in m-axis lateral directions

  14. 15. View of interior, north wall of hot cell featuring ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    15. View of interior, north wall of hot cell featuring radioactive materials containment box, facing east - Nevada Test Site, Reactor Maintenance & Disassembly Complex, Junior Hot Cell, Jackass Flats, Area 25, South of intersection of Roads F & G, Mercury, Nye County, NV

  15. 47. ARAI. Interior view of operating wall of hot cell ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    47. ARA-I. Interior view of operating wall of hot cell in ARA-626. Note stands for operators at viewing windows. Manipulators with hand grips extend cables and other controls into hot cell through ducts above windows. Ineel photo no. 81-27. - Idaho National Engineering Laboratory, Army Reactors Experimental Area, Scoville, Butte County, ID

  16. Epitaxial Engineering of Domain Walls and Distortions in Ferrite Heterostructures

    NASA Astrophysics Data System (ADS)

    Mundy, Julia

    The defining feature of ferroics is the ability of an external stimulus--electric field, magnetic field, or stress--to move domain walls. These topological defects and their motion enables many useful attributes, e.g., memories that can be reversibly written between stable states as well as enhanced conductivity, permittivity, permeability, and piezoelectricity. Although methods are known to drastically increase their density, the placement of domain walls with atomic precision has until now evaded control. Here we engineer the location of domain walls with monolayer precision and exploit this ability to create a novel multiferroic in which ferroelectricity enhances magnetism at all relevant length scales. Starting with hexagonal LuFeO3, a geometric ferroelectric with the greatest known planar rumpling, we introduce individual extra monolayers of FeO during growth to construct formula-unit-thick syntactic layers of ferrimagnetic LuFe2O4 within the LuFeO3 matrix, i.e., (LuFeO3)m /(LuFe2O4)1 superlattices. The severe rumpling imposed by the neighboring LuFeO3 drives the ferrimagnetic LuFe2O4 into a simultaneously ferroelectric state and reduces the LuFe2O4 spin frustration. This increases the magnetic transition temperature significantly--to 281 K for the (LuFeO3)9 /(LuFe2O4)1 superlattice. Moreover, LuFeO3 can form charged ferroelectric domain walls, which we align to the LuFe2O4 bilayers with monolayer precision. Charge transfers to these domain walls to alleviate the otherwise electrostatically unstable polarization arrangement, further boosting the magnetic moment. Our results demonstrate the utility of combining ferroics at the atomic-layer level with attention to domain walls, geometric frustration and polarization doping to create multiferroics by design.

  17. Artificial chemical and magnetic structure at the domain walls of an epitaxial oxide.

    PubMed

    Farokhipoor, S; Magén, C; Venkatesan, S; Íñiguez, J; Daumont, C J M; Rubi, D; Snoeck, E; Mostovoy, M; de Graaf, C; Müller, A; Döblinger, M; Scheu, C; Noheda, B

    2014-11-20

    Progress in nanotechnology requires new approaches to materials synthesis that make it possible to control material functionality down to the smallest scales. An objective of materials research is to achieve enhanced control over the physical properties of materials such as ferromagnets, ferroelectrics and superconductors. In this context, complex oxides and inorganic perovskites are attractive because slight adjustments of their atomic structures can produce large physical responses and result in multiple functionalities. In addition, these materials often contain ferroelastic domains. The intrinsic symmetry breaking that takes place at the domain walls can induce properties absent from the domains themselves, such as magnetic or ferroelectric order and other functionalities, as well as coupling between them. Moreover, large domain wall densities create intense strain gradients, which can also affect the material's properties. Here we show that, owing to large local stresses, domain walls can promote the formation of unusual phases. In this sense, the domain walls can function as nanoscale chemical reactors. We synthesize a two-dimensional ferromagnetic phase at the domain walls of the orthorhombic perovskite terbium manganite (TbMnO3), which was grown in thin layers under epitaxial strain on strontium titanate (SrTiO3) substrates. This phase is yet to be created by standard chemical routes. The density of the two-dimensional sheets can be tuned by changing the film thickness or the substrate lattice parameter (that is, the epitaxial strain), and the distance between sheets can be made as small as 5 nanometres in ultrathin films, such that the new phase at domain walls represents up to 25 per cent of the film volume. The general concept of using domain walls of epitaxial oxides to promote the formation of unusual phases may be applicable to other materials systems, thus giving access to new classes of nanoscale materials for applications in nanoelectronics and

  18. Artificial chemical and magnetic structure at the domain walls of an epitaxial oxide

    NASA Astrophysics Data System (ADS)

    Farokhipoor, S.; Magén, C.; Venkatesan, S.; Íñiguez, J.; Daumont, C. J. M.; Rubi, D.; Snoeck, E.; Mostovoy, M.; de Graaf, C.; Müller, A.; Döblinger, M.; Scheu, C.; Noheda, B.

    2014-11-01

    Progress in nanotechnology requires new approaches to materials synthesis that make it possible to control material functionality down to the smallest scales. An objective of materials research is to achieve enhanced control over the physical properties of materials such as ferromagnets, ferroelectrics and superconductors. In this context, complex oxides and inorganic perovskites are attractive because slight adjustments of their atomic structures can produce large physical responses and result in multiple functionalities. In addition, these materials often contain ferroelastic domains. The intrinsic symmetry breaking that takes place at the domain walls can induce properties absent from the domains themselves, such as magnetic or ferroelectric order and other functionalities, as well as coupling between them. Moreover, large domain wall densities create intense strain gradients, which can also affect the material's properties. Here we show that, owing to large local stresses, domain walls can promote the formation of unusual phases. In this sense, the domain walls can function as nanoscale chemical reactors. We synthesize a two-dimensional ferromagnetic phase at the domain walls of the orthorhombic perovskite terbium manganite (TbMnO3), which was grown in thin layers under epitaxial strain on strontium titanate (SrTiO3) substrates. This phase is yet to be created by standard chemical routes. The density of the two-dimensional sheets can be tuned by changing the film thickness or the substrate lattice parameter (that is, the epitaxial strain), and the distance between sheets can be made as small as 5 nanometres in ultrathin films, such that the new phase at domain walls represents up to 25 per cent of the film volume. The general concept of using domain walls of epitaxial oxides to promote the formation of unusual phases may be applicable to other materials systems, thus giving access to new classes of nanoscale materials for applications in nanoelectronics and

  19. Experimental investigation of interaction processes between droplets and hot walls

    NASA Astrophysics Data System (ADS)

    Karl, A.; Frohn, A.

    2000-04-01

    A detailed experimental investigation of interaction processes of small liquid droplets with hot walls well above the Leidenfrost temperature has been carried out. The experimental method which uses monodisperse droplet streams in combination with a standard video camera allows very detailed observations and measurements with very high time resolution. The main intent of this paper is to study the mechanical behavior of liquid droplets impacting on hot walls well above the Leidenfrost temperature. A better understanding of this process may lead to a better modeling of two-phase flows, especially for applications in fuel preparation processes, combustion processes, and spray cooling. The loss of momentum of the droplets, the droplet deformation, and the onset of droplet disintegration have been investigated. For all experimental results correlations have been developed, which can be used to improve the numerical modeling of two-phase flows. Using the correlation for the loss of momentum a theoretical approximation for the maximum droplet deformation has been deduced, which yields a very good agreement with our own measurements as well as with results reported in the literature. A minimum impinging angle for droplet disintegration has been discovered for small impinging angles. Below this impinging angle no droplet disintegration is observed. This phenomenon is directly related to the energy dissipation at the wall during the interaction process. With the presented work the understanding of basic interaction processes between droplets and hot walls may be improved.

  20. Stress analysis for wall structure in mobile hot cell design

    NASA Astrophysics Data System (ADS)

    Bahrin, Muhammad Hannan; Rahman, Anwar Abdul; Hamzah, Mohd Arif; Mamat, Mohd Rizal; Azman, Azraf; Hasan, Hasni

    2016-01-01

    Malaysian Nuclear Agency is developing a Mobile Hot Cell (MHC) in order to handle and manage Spent High Activity Radioactive Sources (SHARS) such as teletherapy heads and irradiators. At present, there are only two units of MHC in the world, in South Africa and China. Malaysian Mobile Hot cell is developed by Malaysian Nuclear Agency with the assistance of IAEA expert, based on the design of South Africa and China, but with improved features. Stress analysis has been performed on the design in order to fulfil the safety requirement in operation of MHC. This paper discusses the loading analysis effect from the sand to the MHC wall structure.

  1. Chirality-Dependent Vapor-Phase Epitaxial Growth and Termination of Single-Wall Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Liu, Bilu; Liu, Jia; Zhou, Chongwu; USC nanolab Team

    2014-03-01

    Chirality-pure single-wall carbon nanotubes are highly desired for both fundamental study and many of their technological applications. Recently, we have shown that chirality-pure short nanotubes can be used as seeds for vapor-phase epitaxial cloning growth, opening up a new route toward chirality-controlled carbon nanotube synthesis. Nevertheless, the yield of vapor-phase epitaxial growth is rather limited at the present stage, due to the lack of mechanistic understanding of the process. Here we report chirality-dependent growth kinetics and termination mechanism for the vapor-phase epitaxial growth of seven single- chirality nanotubes of (9, 1), (6, 5), (8, 3), (7, 6), (10, 2), (6, 6), and (7, 7), covering near zigzag, medium chiral angle, and near armchair semiconductors, as well as armchair metallic nanotubes. Our results reveal that the growth rates of nanotubes increase with their chiral angles while the active lifetimes of the growth hold opposite trend. Consequently, the chirality distribution of a nanotube ensemble is jointly determined by both growth rates and lifetimes. These results correlate nanotube structures and properties with their growth behaviors and deepen our understanding of chirality-controlled growth of nanotubes.

  2. Growth of chromium carbide in a hot wall DLICVD reactor.

    PubMed

    Boisselier, G; Maury, F; Schuster, F

    2011-09-01

    Chromium carbide coatings were grown at 748 K in a hot wall CVD reactor fed by sublimation of bis(benzene)chromium, BBC (MOCVD) and by direct liquid injection using a BBC/toluene solution (DLICVD). The two types of coatings exhibit an amorphous structure and the same C content (22 at.%). DLICVD permits delivering higher mass flow rate of precursors and consequently the growth rate is 3 times higher and the thickness uniformity is better than using MOCVD. Chromium metal deposition has also been investigated by DLICVD in this hot wall reactor using BBC/toluene/additive as precursor. The purpose of the additive is to block carbide formation. Two additives have been studied: (i) hexachlorobenzene (C6Cl6) and (ii) thiophenol (C6H5SH). The ratio additive/BBC required for Cr metal deposition is a few percent. In this process, C6Cl6 is not decomposed and only traces of Cl (0.4 at.%) are found in the coatings. For a ratio C6Cl6/BBC > 27% the growth of any coating is blocked. The gas phase containing C6H5SH is more reactive since the onset of deposition occurs approximately 50 K before the temperature of the chlorinated compound. Furthermore, a sulfur contamination of 3 at.% has been analyzed in the coatings revealing a partial decomposition of the additive. The results are detailed and discussed in relation with previous works. PMID:22097571

  3. Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate

    SciTech Connect

    Someya, T.; Ishida, Y.; Yoshida, R.; Iimori, T.; Yukawa, R.; Akikubo, K.; Yamamoto, Sh.; Yamamoto, S.; Kanai, T.; Itatani, J.; Komori, F.; Shin, S.; Matsuda, I.; Fukidome, H.; Funakubo, K.; Suemitsu, M.; Yamamoto, T.

    2014-04-21

    Hot carrier dynamics in the Dirac band of n-type epitaxial graphene on a SiC substrate were traced in real time using femtosecond-time-resolved photoemission spectroscopy. The spectral evolution directly reflects the energetically linear density of states superimposed with a Fermi–Dirac distribution. The relaxation time is governed by the internal energy dissipation of electron–electron scattering, and the observed electronic temperature indicates cascade carrier multiplication.

  4. Wall proximity corrections for hot-wire readings in turbulent flows

    NASA Technical Reports Server (NTRS)

    Hebbar, K. S.

    1980-01-01

    This note describes some details of recent (successful) attempts of wall proximity corrections for hot-wire measurements performed in a three-dimensional incompressible turbulent boundary layer. A simple and quite satisfactory method of estimating wall proximity effects on hot-wire readings is suggested.

  5. Artificial chemical and magnetic structure at the domain walls of an epitaxial oxide

    NASA Astrophysics Data System (ADS)

    Noheda, Beatriz

    Progress in nanotechnology requires new paradigms for materials synthesis that allow controlling their functionality down to the smallest scales. Here we report a novel two-dimensional ferromagnetic phase that is synthesized at the domain walls (DWs) of the antiferromagnetic insulator TbMnO3 when grown in thin layers under epitaxial strain. This Mn oxide phase presents an atomic arrangement that does not exist in bulk and cannot be synthesized by standard chemical routes. The number of 2D ferromagnetic sheets can be controlled by tuning the thickness of the thin films, giving rise to volume fractions that go up to 25% of the total film volume. Such novel phases are driven by a unique environment induced by the symmetry breaking and large stresses present at domain walls, which function as nanoreactors. This new class of nanoscale materials may find innovative applications in nanoelectronics and spintronics. The work is published as S. Farokhipoor, C. Magén, S. Venkatesan, J. Íñiguez, C. J. M. Daumont, D. Rubi, E. Snoeck, M. Mostovoy, C. de Graaf, A. Müller, M. Döblinger, C. Scheu, B. Noheda, Nature 515, 379 (2014)

  6. Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers

    NASA Astrophysics Data System (ADS)

    Zhang, Z. W.; Zhu, C. F.; Fong, W. K.; Leung, K. K.; Chan, P. K. L.; Surya, C.

    2011-08-01

    We report investigations on the hot-electron hardness of GaN-based multiple quantum wells (MQWs) fabricated on nanoscale epitaxial lateral overgrown (NELO) GaN layers. This layer was deposited using a SiO 2 growth mask with nanometer-scale windows. The active regions of the devices consist of five-period GaN/InGaN MQWs. Structural analyses of the material indicate significant reduction in the threading dislocation density of the devices compared to the control which were fabricated without the use of the NELO GaN layers. The hot-electron degradation of the devices due to the application of a large dc. current was characterized by detailed examination of the electroluminescence (EL), I- V, thermoreflectance and the current noise power spectra of the devices as a function of the stress time. Significant improvements in the hot-electron hardness were observed in the device compared to the control.

  7. High Performance Walls in Hot-Dry Climates

    SciTech Connect

    Hoeschele, M.; Springer, D.; Dakin, B.; German, A.

    2015-01-01

    High performance walls represent a high priority measure for moving the next generation of new homes to the Zero Net Energy performance level. The primary goal in improving wall thermal performance revolves around increasing the wall framing from 2x4 to 2x6, adding more cavity and exterior rigid insulation, achieving insulation installation criteria meeting ENERGY STAR's thermal bypass checklist, and reducing the amount of wood penetrating the wall cavity.

  8. HOT CELL BUILDING, TRA632. WHILE STEEL BEAMS DEFINE FUTURE WALLS ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    HOT CELL BUILDING, TRA-632. WHILE STEEL BEAMS DEFINE FUTURE WALLS OF THE BUILDING, SHEET STEEL DEFINES THE HOT CELL "BOX" ITSELF. THREE OPERATING WINDOWS ON LEFT; ONE VIEWING WINDOW ON RIGHT. TUBES WILL CONTAIN SERVICE AND CONTROL LEADS. SPACE BETWEEN INNER AND OUTER BOX WALLS WILL BE FILLED WITH SHIELDED WINDOWS AND BARETES CONCRETE. CAMERA FACES SOUTHEAST. INL NEGATIVE NO. 7933. Unknown Photographer, ca. 5/1953 - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

  9. A&M. TAN607. Shield wall sections and details around hot shop ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. TAN-607. Shield wall sections and details around hot shop and special equipment room, showing taper, crane rail elevations, and elevation for biparting door (door no. 301) in wall between hot shop and special equipment room. Ralph M. Parsons 902-3-ANP-607-S 138. Date: December 1952. Approved by INEEL Classification Office for public release. INEEL index code no. 034-0607-62-963-106782 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  10. HOT CELL BUILDING, TRA632, INTERIOR. OPEN CORRIDOR ALONG SOUTH WALL ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    HOT CELL BUILDING, TRA-632, INTERIOR. OPEN CORRIDOR ALONG SOUTH WALL OF BUILDING. CAMERA IS NEAR HOT CELL NO. 1, FACES WEST TOWARDS WALL OF TEST-TRAIN ASSEMBLY (TRA-632A). NOTE MOTORIZED RAIL CRANE ABOVE STAIRWAY. INL NEGATIVE NO. HD46-29-3. Mike Crane, Photographer, 2/2005 - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

  11. Response of hot element flush wall gauges in oscillating laminar flow

    NASA Technical Reports Server (NTRS)

    Giddings, T. A.; Cook, W. J.

    1986-01-01

    The time dependent response characteristics of flush-mounted hot element gauges used as instruments to measure wall shear stress in unsteady periodic air flows were investigated. The study was initiated because anomalous results were obtained from the gauges in oscillating turbulent flows for the phase relation of the wall shear stress variation, indicating possible gauge response problems. Flat plate laminar oscillating turbulent flows characterized by a mean free stream velocity with a superposed sinusoidal variation were performed. Laminar rather than turbulent flows were studied, because a numerical solution for the phase angle between the free stream velocity and the wall shear stress variation that is known to be correct can be obtained. The focus is on comparing the phase angle indicated by the hot element gauges with corresponding numerical prediction for the phase angle, since agreement would indicate that the hot element gauges faithfully follow the true wall shear stress variation.

  12. High Performance Walls in Hot-Dry Climates

    SciTech Connect

    Hoeschele, Marc; Springer, David; Dakin, Bill; German, Alea

    2015-01-01

    High performance walls represent a high priority measure for moving the next generation of new homes to the Zero Net Energy performance level. The primary goal in improving wall thermal performance revolves around increasing the wall framing from 2x4 to 2x6, adding more cavity and exterior rigid insulation, achieving insulation installation criteria meeting ENERGY STAR's thermal bypass checklist. To support this activity, in 2013 the Pacific Gas & Electric Company initiated a project with Davis Energy Group (lead for the Building America team, Alliance for Residential Building Innovation) to solicit builder involvement in California to participate in field demonstrations of high performance wall systems. Builders were given incentives and design support in exchange for providing site access for construction observation, cost information, and builder survey feedback. Information from the project was designed to feed into the 2016 Title 24 process, but also to serve as an initial mechanism to engage builders in more high performance construction strategies. This Building America project utilized information collected in the California project.

  13. 113. ARAI Hot cell (ARA626) Building wall sections and details ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    113. ARA-I Hot cell (ARA-626) Building wall sections and details of radio chemistry lab. Shows high-bay roof over hot cells and isolation rooms below grade storage pit for fuel elements. Norman Engineering Company: 961-area/SF-626-A-4. Date: January 1959. Ineel index code no. 068-0626-00-613-102724. - Idaho National Engineering Laboratory, Army Reactors Experimental Area, Scoville, Butte County, ID

  14. Evaluation of Tritium Behavior in the Epoxy Painted Concrete Wall of ITER Hot Cell

    SciTech Connect

    Nakamura, Hirofumi; Hayashi, Takumi; Kobayashi, Kazuhiro; Nishi, Masataka

    2005-07-15

    Tritium behavior released in the ITER hot cell has been investigated numerically using a combined analytical methods of a tritium transport analysis in the multi-layer wall (concrete and epoxy paint) with the one dimensional diffusion model and a tritium concentration analysis in the hot cell with the complete mixing model by the ventilation. As the results, it is revealed that tritium concentration decay and permeation issues are not serious problem in a viewpoint of safety, since it is expected that tritium concentration in the hot cell decrease rapidly within several days just after removing the tritium release source, and tritium permeation through the epoxy painted concrete wall will be negligible as long as the averaged realistic diffusion coefficient is ensured in the concrete wall. It is also revealed that the epoxy paint on the concrete wall prevents the tritium inventory increase in the concrete wall greatly (two orders of magnitudes), but still, the inventory in the wall is estimated to reach about 0.1 PBq for 20 years operation.

  15. ARCHITECTURAL WALL SECTIONS OF HOT PILOT PLANT (CPP640). INL DRAWING ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    ARCHITECTURAL WALL SECTIONS OF HOT PILOT PLANT (CPP-640). INL DRAWING NUMBER 200-0640-00-279-111682. ALTERNATE ID NUMBER 8952-CPP-640-A-5. - Idaho National Engineering Laboratory, Idaho Chemical Processing Plant, Fuel Reprocessing Complex, Scoville, Butte County, ID

  16. HOT CELL BUILDING, TRA632. ELEVATIONS. PUMICE BLOCK WALLS. BLOWER AND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    HOT CELL BUILDING, TRA-632. ELEVATIONS. PUMICE BLOCK WALLS. BLOWER AND FILTER LOFT PLATFORM AND LADDER ON EAST SIDE. IDAHO OPERATIONS OFFICE MTR-632-IDO-4, 11/1952. INL INDEX NO. 531-0632-00-396-110563, REV. 2. - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

  17. Hot wire production of single-wall and multi-wall carbon nanotubes

    DOEpatents

    Dillon, Anne C.; Mahan, Archie H.; Alleman, Jeffrey L.

    2010-10-26

    Apparatus (210) for producing a multi-wall carbon nanotube (213) may comprise a process chamber (216), a furnace (217) operatively associated with the process chamber (216), and at least one filament (218) positioned within the process chamber (216). At least one power supply (220) operatively associated with the at least one filament (218) heats the at least one filament (218) to a process temperature. A gaseous carbon precursor material (214) operatively associated with the process chamber (216) provides carbon for forming the multi-wall carbon nanotube (213). A metal catalyst material (224) operatively associated with the process (216) catalyzes the formation of the multi-wall carbon nanotube (213).

  18. Hot-wall corrosion testing of simulated high level nuclear waste

    SciTech Connect

    Chandler, G.T.; Zapp, P.E.; Mickalonis, J.I.

    1995-01-01

    Three materials of construction for steam tubes used in the evaporation of high level radioactive waste were tested under heat flux conditions, referred to as hot-wall tests. The materials were type 304L stainless steel alloy C276, and alloy G3. Non-radioactive acidic and alkaline salt solutions containing halides and mercury simulated different high level waste solutions stored or processed at the United States Department of Energy`s Savannah River Site. Alloy C276 was also tested for corrosion susceptibility under steady-state conditions. The nickel-based alloys C276 and G3 exhibited excellent corrosion resistance under the conditions studied. Alloy C276 was not susceptible to localized corrosion and had a corrosion rate of 0.01 mpy (0.25 {mu}m/y) when exposed to acidic waste sludge and precipitate slurry at a hot-wall temperature of 150{degrees}C. Type 304L was susceptible to localized corrosion under the same conditions. Alloy G3 had a corrosion rate of 0.1 mpy (2.5 {mu}m/y) when exposed to caustic high level waste evaporator solution at a hot-wall temperature of 220{degrees}C compared to 1.1 mpy (28.0 {mu}/y) for type 304L. Under extreme caustic conditions (45 weight percent sodium hydroxide) G3 had a corrosion rate of 0.1 mpy (2.5 {mu}m/y) at a hot-wall temperature of 180{degrees}C while type 304L had a high corrosion rate of 69.4 mpy (1.8 mm/y).

  19. Convective response of a wall-mounted hot-film sensor in a shock tube

    NASA Technical Reports Server (NTRS)

    Roberts, A. Sidney, Jr.; Ortgies, Kelly R.; Gartenberg, Ehud; Carraway, Debra L.

    1991-01-01

    Shock tube experiments were performed in order to determine the response of a single hot-film element of a sensor array to transiently induced flow behind weak normal shock waves. The experiments attempt to isolate the response due only to the change in convective heat transfer at the hot-film surface mounted on the wall of the shock tube. The experiments are described, the results being correlated with transient boundary layer theory and compared with an independent set of experimental results. One of the findings indicates that the change in the air properties (temperature and pressure) precedes the air mass transport, causing an ambiguity in the sensor response to the development of the velocity boundary layer. Also, a transient, local heat transfer coefficient is formulated to be used as a forcing function in an hot-film instrument model and simulation which remains under investigation.

  20. Hot film wall shear instrumentation for compressible boundary layer transition research

    NASA Technical Reports Server (NTRS)

    Schneider, Steven P.

    1992-01-01

    Experimental and analytical studies of hot film wall shear instrumentation were performed. A new hot film anemometer was developed and tested. The anemometer performance was not quite as good as that of commercial anemometers, but the cost was much less and testing flexibility was improved. The main focus of the project was a parametric study of the effect of sensor size and substrate material on the performance of hot film surface sensors. Both electronic and shock-induced flow experiments were performed to determine the sensitivity and frequency response of the sensors. The results are presented in Michael Moen's M.S. thesis, which is appended. A condensed form of the results was also submitted for publication.

  1. Chloride-based fast homoepitaxial growth of 4H-SiC films in a vertical hot-wall CVD

    NASA Astrophysics Data System (ADS)

    Guoguo, Yan; Feng, Zhang; Yingxi, Niu; Fei, Yang; Xingfang, Liu; Lei, Wang; Wanshun, Zhao; Guosheng, Sun; Yiping, Zeng

    2016-06-01

    Chloride-based fast homoepitaxial growth of 4H-SiC epilayers was performed on 4° off-axis 4H-SiC substrates in a home-made vertical hot-wall chemical vapor deposition (CVD) system using H2‑SiH4‑C2H4‑HCl. The effect of the SiH4/H2 ratio and reactor pressure on the growth rate of 4H-SiC epilayers has been studied successively. The growth rate increase in proportion to the SiH4/H2 ratio and the influence mechanism of chlorine has been investigated. With the reactor pressure increasing from 40 to 100 Torr, the growth rate increased to 52 μm/hand then decreased to 47 μm/h, which is due to the joint effect of H2 and HCl etching as well as the formation of Si clusters at higher reactor pressure. The surface root mean square (RMS) roughness keeps around 1 nm with the growth rate increasing to 49 μm/h. The scanning electron microscope (SEM), Raman spectroscopy and X-ray diffraction (XRD) demonstrate that 96.7 μm thick 4H-SiC layers of good uniformity in thickness and doping with high crystal quality can be achieved. These results prove that chloride-based fast epitaxy is an advanced growth technique for 4H-SiC homoepitaxy. Project supported by the National High Technology R&D Program of China (No. 2014AA041402), the National Natural Science Foundation of China (Nos. 61474113, 61274007, 61574140), the Beijing Natural Science Foundation of China (Nos. 4132076, 4132074), the Program of State Grid Smart Grid Research Institute (No. SGRI-WD-71-14-004), and the Youth Innovation Promotion Association of CAS.

  2. Chloride-based fast homoepitaxial growth of 4H-SiC films in a vertical hot-wall CVD

    NASA Astrophysics Data System (ADS)

    Guoguo, Yan; Feng, Zhang; Yingxi, Niu; Fei, Yang; Xingfang, Liu; Lei, Wang; Wanshun, Zhao; Guosheng, Sun; Yiping, Zeng

    2016-06-01

    Chloride-based fast homoepitaxial growth of 4H-SiC epilayers was performed on 4° off-axis 4H-SiC substrates in a home-made vertical hot-wall chemical vapor deposition (CVD) system using H2-SiH4-C2H4-HCl. The effect of the SiH4/H2 ratio and reactor pressure on the growth rate of 4H-SiC epilayers has been studied successively. The growth rate increase in proportion to the SiH4/H2 ratio and the influence mechanism of chlorine has been investigated. With the reactor pressure increasing from 40 to 100 Torr, the growth rate increased to 52 μm/hand then decreased to 47 μm/h, which is due to the joint effect of H2 and HCl etching as well as the formation of Si clusters at higher reactor pressure. The surface root mean square (RMS) roughness keeps around 1 nm with the growth rate increasing to 49 μm/h. The scanning electron microscope (SEM), Raman spectroscopy and X-ray diffraction (XRD) demonstrate that 96.7 μm thick 4H-SiC layers of good uniformity in thickness and doping with high crystal quality can be achieved. These results prove that chloride-based fast epitaxy is an advanced growth technique for 4H-SiC homoepitaxy. Project supported by the National High Technology R&D Program of China (No. 2014AA041402), the National Natural Science Foundation of China (Nos. 61474113, 61274007, 61574140), the Beijing Natural Science Foundation of China (Nos. 4132076, 4132074), the Program of State Grid Smart Grid Research Institute (No. SGRI-WD-71-14-004), and the Youth Innovation Promotion Association of CAS.

  3. Cell wall and lipid composition of Isosphaera pallida, a budding eubacterium from hot springs.

    PubMed Central

    Giovannoni, S J; Godchaux, W; Schabtach, E; Castenholz, R W

    1987-01-01

    Isosphaera pallida is an unusual gliding, budding eubacterium recently isolated from North American hot springs. Electron micrographs of ultrathin sections revealed a cell wall atypical of eubacteria: two electrondense layers separated by an electron-transparent layer, with no evident peptidoglycan layer. Growth was not inhibited by penicillin. Cell walls were isolated from sheared cells by velocity sedimentation. The rigid-layer fraction, prepared from cell walls by treatment with boiling 10% sodium dodecyl sulfate, was hydrolyzed and chemically analyzed for muramic acid. This essential component of peptidoglycan was absent. Amino acid analysis demonstrated a proteinaceous wall structure. Pitlike surface structures seen in negatively stained whole cells and thin sections were correlated with periodically spaced perforations of the rigid sacculus. An analysis of the lipid composition of I. pallida revealed typical ester-linked lipids with unbranched fatty acids, in contrast to the isoprenyl ether-linked lipids of archaebacteria, which also have proteinaceous cell walls. Capnoids, unusual sulfonolipids which are present in gliding bacteria of the Cytophaga-Flexibacter group, were absent. Images PMID:3584067

  4. Cell wall and lipid composition of Isosphaera pallida, a budding eubacterium from hot springs.

    PubMed

    Giovannoni, S J; Godchaux, W; Schabtach, E; Castenholz, R W

    1987-06-01

    Isosphaera pallida is an unusual gliding, budding eubacterium recently isolated from North American hot springs. Electron micrographs of ultrathin sections revealed a cell wall atypical of eubacteria: two electrondense layers separated by an electron-transparent layer, with no evident peptidoglycan layer. Growth was not inhibited by penicillin. Cell walls were isolated from sheared cells by velocity sedimentation. The rigid-layer fraction, prepared from cell walls by treatment with boiling 10% sodium dodecyl sulfate, was hydrolyzed and chemically analyzed for muramic acid. This essential component of peptidoglycan was absent. Amino acid analysis demonstrated a proteinaceous wall structure. Pitlike surface structures seen in negatively stained whole cells and thin sections were correlated with periodically spaced perforations of the rigid sacculus. An analysis of the lipid composition of I. pallida revealed typical ester-linked lipids with unbranched fatty acids, in contrast to the isoprenyl ether-linked lipids of archaebacteria, which also have proteinaceous cell walls. Capnoids, unusual sulfonolipids which are present in gliding bacteria of the Cytophaga-Flexibacter group, were absent. PMID:3584067

  5. Large structural, thin-wall castings made of metals subject to hot tearing, and their fabrication

    NASA Technical Reports Server (NTRS)

    Smashey, Russell W. (Inventor)

    2001-01-01

    An article, such as a gas turbine engine mixer, is made by providing a mold structure defining a thin-walled, hollow article, and a base metal that is subject to hot tear cracking when cast in a generally equiaxed polycrystalline form, such as Rene' 108 and Mar-M247. The article is fabricated by introducing the molten base metal into the mold structure, and directionally solidifying the base metal in the mold structure to form a directionally oriented structure. The directionally oriented structure may be formed of a single grain or oriented multiple grains.

  6. High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures

    NASA Astrophysics Data System (ADS)

    Kakanakova-Georgieva, A.; Nilsson, D.; Janzén, E.

    2012-01-01

    We report on a growth of AlN at reduced temperatures of 1100 °C and 1200 °C in a horizontal-tube hot-wall metalorganic chemical vapor deposition reactor configured for operation at temperatures of up to 1500-1600 °C and using a joint delivery of precursors. We present a simple route—as viewed in the context of the elaborate multilayer growth approaches with pulsed ammonia supply—for the AlN growth process on SiC substrates at the reduced temperature of 1200 °C. The established growth conditions in conjunction with the particular in-situ intervening SiC substrate treatment are considered pertinent to the accomplishment of crystalline, relatively thin, ˜700 nm, single AlN layers of high-quality. The feedback is obtained from surface morphology, cathodoluminescence and secondary ion mass spectrometry characterization.

  7. Fibers comprised of epitaxially grown single-wall carbon nanotubes, and a method for added catalyst and continuous growth at the tip

    DOEpatents

    Kittrell, W. Carter; Wang, Yuhuang; Kim, Myung Jong; Hauge, Robert H.; Smalley, Richard E.; Marek leg, Irene Morin

    2010-06-01

    The present invention is directed to fibers of epitaxially grown single-wall carbon nanotubes (SWNTs) and methods of making same. Such methods generally comprise the steps of: (a) providing a spun SWNT fiber; (b) cutting the fiber substantially perpendicular to the fiber axis to yield a cut fiber; (c) etching the cut fiber at its end with a plasma to yield an etched cut fiber; (d) depositing metal catalyst on the etched cut fiber end to form a continuous SWNT fiber precursor; and (e) introducing feedstock gases under SWNT growth conditions to grow the continuous SWNT fiber precursor into a continuous SWNT fiber.

  8. Dislocation blocking by AlGaN hot electron injecting layer in the epitaxial growth of GaN terahertz Gunn diode

    NASA Astrophysics Data System (ADS)

    Li, Liang; Yang, Lin'an; Zhang, Jincheng; Hao, Yue

    2013-09-01

    This paper reports an efficient method to improve the crystal quality of GaN Gunn diode with AlGaN hot electron injecting layer (HEI). An evident reduction of screw dislocation and edge dislocation densities is achieved by the strain management and the enhanced lateral growth in high temperature grown AlGaN HEI layer. Compared with the top hot electron injecting layer (THEI) structure, the bottom hot electron injecting layer (BHEI) structure enhances the crystal quality of transit region due to the growth sequence modulation of HEI layer. A high Hall mobility of 2934 cm2/Vs at 77 K, a nearly flat downtrend of Hall mobility at the temperature ranging from 300 to 573 K, a low intensity of ratio of yellow luminescence band to band edge emission, a narrow band edge emission line-width, and a smooth surface morphology are observed for the BHEI structural epitaxy of Gunn diode, which indicates that AlGaN BHEI structure is a promising candidate for fabrication of GaN Gunn diodes in terahertz regime.

  9. Additive Manufacturing of IN100 Superalloy Through Scanning Laser Epitaxy for Turbine Engine Hot-Section Component Repair: Process Development, Modeling, Microstructural Characterization, and Process Control

    NASA Astrophysics Data System (ADS)

    Acharya, Ranadip; Das, Suman

    2015-09-01

    This article describes additive manufacturing (AM) of IN100, a high gamma-prime nickel-based superalloy, through scanning laser epitaxy (SLE), aimed at the creation of thick deposits onto like-chemistry substrates for enabling repair of turbine engine hot-section components. SLE is a metal powder bed-based laser AM technology developed for nickel-base superalloys with equiaxed, directionally solidified, and single-crystal microstructural morphologies. Here, we combine process modeling, statistical design-of-experiments (DoE), and microstructural characterization to demonstrate fully metallurgically bonded, crack-free and dense deposits exceeding 1000 μm of SLE-processed IN100 powder onto IN100 cast substrates produced in a single pass. A combined thermal-fluid flow-solidification model of the SLE process compliments DoE-based process development. A customized quantitative metallography technique analyzes digital cross-sectional micrographs and extracts various microstructural parameters, enabling process model validation and process parameter optimization. Microindentation measurements show an increase in the hardness by 10 pct in the deposit region compared to the cast substrate due to microstructural refinement. The results illustrate one of the very few successes reported for the crack-free deposition of IN100, a notoriously "non-weldable" hot-section alloy, thus establishing the potential of SLE as an AM method suitable for hot-section component repair and for future new-make components in high gamma-prime containing crack-prone nickel-based superalloys.

  10. Comparison of laser-ablation and hot-wall chemical vapour deposition techniques for nanowire fabrication

    NASA Astrophysics Data System (ADS)

    Stern, E.; Cheng, G.; Guthrie, S.; Turner-Evans, D.; Broomfield, E.; Lei, B.; Li, C.; Zhang, D.; Zhou, C.; Reed, M. A.

    2006-06-01

    A comparison of the transport properties of populations of single-crystal, In2O3 nanowires (NWs) grown by unassisted hot-wall chemical vapour deposition (CVD) versus NWs grown by laser-ablation-assisted chemical vapour deposition (LA-CVD) is presented. For nominally identical growth conditions across the two systems, NWs fabricated at 850 °C with laser-ablation had significantly higher average mobilities at the 99.9% confidence level, 53.3 ± 5.8 cm2 V-1 s-1 versus 10.2 ± 1.9 cm2 V-1 s-1. It is also observed that increasing growth temperature decreases mobility for LA-CVD NWs. Transmission electron microscopy studies of CVD-fabricated samples indicate the presence of an amorphous In2O3 region surrounding the single-crystal core. Further, low-temperature measurements verify the presence of ionized impurity scattering in low-mobility CVD-grown NWs.

  11. Gas temperature measurements inside a hot wall chemical vapor synthesis reactor.

    PubMed

    Notthoff, Christian; Schilling, Carolin; Winterer, Markus

    2012-11-01

    One key but complex parameter in the chemical vapor synthesis (CVS) of nanoparticles is the time temperature profile of the gas phase, which determines particle characteristics such as size (distribution), morphology, microstructure, crystal, and local structure. Relevant for the CVS process and for the corresponding particle characteristics is, however, not the T(t)-profile generated by an external energy source such as a hot wall or microwave reactor but the temperature of the gas carrying reactants and products (particles). Due to a complex feedback of the thermodynamic and chemical processes in the reaction volume with the external energy source, it is very difficult to predict the real gas phase temperature field from the externally applied T(t)-profile. Therefore, a measurement technique capable to determine the temperature distribution of the gas phase under process conditions is needed. In this contribution, we demonstrate with three proof of principle experiments the use of laser induced fluorescence thermometry to investigate the CVS process under realistic conditions.

  12. Epitaxial Thin Film Silicon Solar Cells Fabricated by Hot Wire Chemical Vapor Deposition Below 750 ..deg..C: Preprint

    SciTech Connect

    Alberi, K.; Martin, I. T.; Shub, M.; Teplin, C. W.; Iwaniczko, E.; Xu, Y.; duda, A.; Stradin, P.; Johnston, S. W.; Romero, M. J.; Branz, H. M.; Young, D. L.

    2009-06-01

    We report on fabricating film c-Si solar cells on Si wafer templates by hot-wire chemical vapor deposition. These devices, grown at glass-compatible temperatures < 750..deg..C, demonstrate open-circuit voltages > 500 mV and efficiencies > 5%.

  13. Changes in plant cell-wall structure of corn stover due to hot compressed water pretreatment and enhanced enzymatic hydrolysis.

    PubMed

    Zhou, Wei; Yang, Maohua; Wang, Caixia; Liu, Jianfei; Xing, Jianmin

    2014-08-01

    Corn stover is a potential feedstock for biofuel production. This work investigated physical and chemical changes in plant cell-wall structure of corn stover due to hot compressed water (HCW) pretreatment at 170-190 °C in a tube reactor. Chemical composition analysis showed the soluble hemicellulose content increased with pretreatment temperature, whereas the hemicellulose content decreased from 29 to 7 % in pretreated solids. Scanning electron microscopy revealed the parenchyma-type second cell-wall structure of the plant was almost completely removed at 185 °C, and the sclerenchyma-type second cell wall was greatly damaged upon addition of 5 mmol/L ammonium sulfate during HCW pretreatment. These changes favored accessibility for enzymatic action. Enzyme saccharification of solids by optimized pretreatment with HCW at 185 °C resulted in an enzymatic hydrolysis yield of 87 %, an enhancement of 77 % compared to the yield from untreated corn stover.

  14. Polytype stability, microstructural evolution, and impurities at the interface of homoepitaxial 4H-silicon carbide(1120) thin films grown via hot-wall chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Bishop, Seann M. G.

    The electronic properties of 4H-SiC make it a leading semiconductor material for high-power applications. Despite advances in SiC crystal growth, devices fabricated in 4H-SiC(0001) continue to be limited by defects like micropipes, dislocations and stacking faults. Investigations performed here on non-basal 4H-SiC have demonstrated micropipe-free, 4H-SiC(112¯0) films comparable with conventional 4H-SiC(0001). Improved device performance has been achieved for p-i-n rectifiers fabricated in 4H-SiC(112¯0). Hot-wall chemical vapor deposition (CVD) is the most widely used growth process employed to meet the material demands for 4H-SiC-based high-power electronics; however, the suitability of this technique for the growth of thin films (<10 mum) is not well established. A detailed analysis of the epitaxial growth of 4H-SiC(112¯0) thin films by vertical, hot-wall CVD has been performed in this work. Two growth regimes were identified and termed sublimation growth and precursor growth. In the former, the SiC coating decomposes and results in the in-situ (sublimation) growth of epitaxial SiC films. It is proposed that in-situ layer aids in subsequent thin film growth from reactant gases. Transmission electron microscopy revealed areas without observable defects and an indistinguishable interface between the substrate and sublimation grown layer. Aluminum impurity concentrations to 3x10 18 cm-3 were identified near the interface with the substrate. The influence of these impurities on the cathodoluminescence spectrum of 4H-SiC was studied. A model based on boundary layer theory was developed to explain the origin and the profile of the aluminum impurities. Secondary ion mass spectrometry revealed the SiC coating to be the major source of aluminum impurities. An argon diluent reduced the concentration of aluminum at the interface to 2x1017 cm-3. Films deposited via precursor growth exhibited specular surfaces. Optical and structural characterization showed the films

  15. A temperature correlation for the radiation resistance of a thick-walled circular duct exhausting a hot gas

    NASA Technical Reports Server (NTRS)

    Mahan, J. R.; Cline, J. G.; Jones, J. D.

    1984-01-01

    It is often useful to know the radiation impedance of an unflanged but thick-walled circular duct exhausting a hot gas into relatively cold surroundings. The reactive component is shown to be insensitive to temperature, but the resistive component is shown to be temperature dependent. A temperature correlation is developed permitting prediction of the radiation resistance from a knowledge of the temperature difference between the ambient air and the gas flowing from the duct, and a physical basis for this correlation is presented.

  16. Technology Solutions Case Study: High-Performance Walls in Hot-Dry Climates

    SciTech Connect

    2015-04-01

    In this project,the Alliance for Residential Building Innovation (ARBI) team worked with builders in California to implement wall assemblies meeting a U-value lower than 0.050 Btu/h-ft2-°F. ARBI and its project team members helped builders identify preferred wall designs that met the requirements of their architects, structural engineers, and purchasing agents and that were acceptable to their subcontractors. Construction methods were observed and documented and construction costs obtained from builders were used to inform cost estimates for a range of advanced wall system types and insulation types. Wall framing types of 2 × 6 (16- and 24-in. on center [o.c.]) and double stud were modeled in Building Energy Optimization (BEopt™) software with cavity insulation levels ranging from R-19 to R-33 (double stud) and exterior rigid insulation of R-4, R-6, and R-8.

  17. Bbb ZN domain walls in hot Script N = 4 SYM at weak and strong coupling

    NASA Astrophysics Data System (ADS)

    Armoni, Adi; Kumar, S. Prem; Ridgway, Jefferson M.

    2009-01-01

    We study the tensions of domain walls in the deconfined phase of Script N = 4 SUSY Yang-Mills theory on Bbb R3 × S1, at weak and strong coupling. We calculate the k-wall tension at one-loop order and find that it is proportional to k(N-k) (Casimir scaling). The two-loops analysis suggests that Casimir scaling persists to this order. The strong coupling calculation is performed by using the AdS/CFT correspondence. We argue that the k-wall should be identified with an NS5-brane wrapping an S4 inside S5 in the AdS-Schwarzschild × S5 background in Type IIB string theory. The tension at strong coupling is compared with the weak coupling result. We also compare our results with those from lattice simulations in pure Yang-Mills theory.

  18. Dynamic analysis of moisture transport through walls and associated cooling loads in the hot/humid climate of Florianopolis, Brazil

    SciTech Connect

    Mendes, N.; Winkelmann, F.C.; Lamberts, R.; Philippi, P.C.; Da Cunha Neto, J.A.B.

    1996-04-01

    The authors describe the use of a dynamic model of combined heat and mass transfer to analyze the effects on cooling loads of transient moisture storage and transport through walls with porous building materials, under varying boundary conditions. The materials studied were brick, lime mortar and autoclaved cellular concrete. The physical properties of these materials, such as mass transport coefficients, thermal conductivity and specific heat, were taken to be functions of moisture content. The simulation results were compared to those obtained by pure conduction heat transfer without moisture effects. Also analyzed were the influence on cooling loads of high moisture content due to rain soaking of materials, and the influence of solar radiation on sunny and cloudy days. The weather used was a hot/humid summer period in Florianopolis (South Brazil). It is shown that neglecting moisture migration or assuming that the physical properties of wall materials do not depend on moisture content can result in large errors in sensible and latent heat transfer.

  19. EBSD analysis of tungsten-filament carburization during the hot-wire CVD of multi-walled carbon nanotubes.

    PubMed

    Oliphant, Clive J; Arendse, Christopher J; Camagu, Sigqibo T; Swart, Hendrik

    2014-02-01

    Filament condition during hot-wire chemical vapor deposition conditions of multi-walled carbon nanotubes is a major concern for a stable deposition process. We report on the novel application of electron backscatter diffraction to characterize the carburization of tungsten filaments. During the synthesis, the W-filaments transform to W2C and WC. W-carbide growth followed a parabolic behavior corresponding to the diffusion of C as the rate-determining step. The grain size of W, W2C, and WC increases with longer exposure time and increasing filament temperature. The grain size of the recrystallizing W-core and W2C phase grows from the perimeter inwardly and this phenomenon is enhanced at filament temperatures in excess of 1,400°C. Cracks appear at filament temperatures >1,600°C, accompanied by a reduction in the filament operational lifetime. The increase of the W2C and recrystallized W-core grain size from the perimeter inwardly is ascribed to a thermal gradient within the filament, which in turn influences the hardness measurements and crack formation. PMID:24423105

  20. Epitaxial thin film growth in outer space

    NASA Technical Reports Server (NTRS)

    Ignatiev, Alex; Chu, C. W.

    1988-01-01

    A new concept for materials processing in space exploits the ultravacuum component of space for thin-film epitaxial growth. The unique LEO space environment is expected to yield 10-ftorr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume (about 100 cu m) without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and throughput of epitaxially grown materials, including semiconductors, magnetic materials, and thin-film high-temperature superconductors.

  1. Investigation of the structural, electrical, and optical properties of MnAl2Se4 layers grown using the hot-wall deposition technique

    NASA Astrophysics Data System (ADS)

    You, S. H.; Hong, K. J.; Jeong, J. W.; Jeong, T. S.; Youn, C. J.; Moon, J. D.

    2016-08-01

    MnAl2Se4 layers were grown using the hot-wall deposition technique with an attached reservoir tail. Precise control of the vapor pressure in the reservoir was thought to play an important role in the grown of a stoichiometric layer. From the relation between the reciprocal temperature and the carrier concentration, we extracted the dominant trap level as 96.1 meV in the high-temperature region and 13.9 meV in the middle-temperature region. Thus, from a log-log plot between the mobility and the temperature, the mobility showed the different temperature-dependent decreases of the mobility at temperatures above 100 K: T -1/2 in the temperature range of 100 < T < 225 K and T -3/2 in the temperature of T > 225 K. The mobility decreased in proportion to T 1 in the low-temperature range of T < 100 K. By analyzing the optical absorption results, the bandgap variation matched E g ( T) = E g (0) - 3.19 × 10-3 T 2/( T + 488) well, where E g (0) is estimated to be 3.5616 eV. Consequently, low-temperature growth of MnAl2Se4 layers was achieved by using the hot-wall deposition technique.

  2. A Microstructure Evolution Model for the Processing of Single-Crystal Alloy CMSX-4 Through Scanning Laser Epitaxy for Turbine Engine Hot-Section Component Repair (Part II)

    NASA Astrophysics Data System (ADS)

    Acharya, Ranadip; Bansal, Rohan; Gambone, Justin J.; Das, Suman

    2014-12-01

    Part I [Metall. Mater. Trans. B, 2014, DOI:10.1007/s11663-014-0117-9] presented a comprehensive thermal, fluid flow, and solidification model that can predict the temperature distribution and flow characteristics for the processing of CMSX-4 alloy powder through scanning laser epitaxy (SLE). SLE is an additive manufacturing technology aimed at the creation of equiaxed, directionally solidified and single-crystal (SX) deposits of nickel-based superalloys using a fast-scanning laser beam. Part II here further explores the Marangoni convection-based model to predict the solidification microstructure as a function of the conditions at the trailing edge of the melt pool formed during the SLE process. Empirical values for several microstructural characteristics such as the primary dendrite arm spacing (PDAS), the columnar-to-equiaxed transition (CET) criterion and the oriented-to-misoriented transition (OMT) criterion are obtained. Optical microscopy provides visual information on the various microstructural characteristics of the deposited material such as melt depth, CET location, OMT location, PDAS, etc. A quantitative and consistent investigation of this complex set of characteristics is both challenging and unprecedented. A customized image-analysis technique based on active contouring is developed to automatically extract these data from experimental micrographs. Quantitative metallography verifies that even for the raster scan pattern in SLE and the corresponding line heat source assumption, the PDAS follows the growth relation w ~ G -0.5 V -0.25 ( w = PDAS, G = temperature gradient and V = solidification velocity) developed for marginal stability under constrained growth. Models for the CET and OMT are experimentally validated, thereby providing powerful predictive capabilities for controlling the microstructure of SX alloys processed through SLE.

  3. Prototype solar heated hot water systems and double-walled heat exchangers: A collection of quarterly reports

    NASA Technical Reports Server (NTRS)

    1978-01-01

    The plan schedule and status of multiple objectives to be achieved in the development, manufacture, installation, and maintenance of two solar heated hot water prototype systems and two heat exchangers are reported. A computer program developed to resolve problems and evaluate system performance is described.

  4. Thermoelectric imaging of structural disorder in epitaxial graphene.

    PubMed

    Cho, Sanghee; Kang, Stephen Dongmin; Kim, Wondong; Lee, Eui-Sup; Woo, Sung-Jae; Kong, Ki-Jeong; Kim, Ilyou; Kim, Hyeong-Do; Zhang, Tong; Stroscio, Joseph A; Kim, Yong-Hyun; Lyeo, Ho-Ki

    2013-10-01

    Heat is a familiar form of energy transported from a hot side to a colder side of an object, but not a notion associated with microscopic measurements of electronic properties. A temperature difference within a material causes charge carriers, electrons or holes to diffuse along the temperature gradient inducing a thermoelectric voltage. Here we show that local thermoelectric measurements can yield high-sensitivity imaging of structural disorder on the atomic and nanometre scales. The thermopower measurement acts to amplify the variations in the local density of states at the Fermi level, giving high differential contrast in thermoelectric signals. Using this imaging technique, we uncovered point defects in the first layer of epitaxial graphene, which generate soliton-like domain-wall line patterns separating regions of the different interlayer stacking of the second graphene layer.

  5. Use of PIV to highlight possible errors in hot-wire Reynolds stress data over a 2D rough wall

    NASA Astrophysics Data System (ADS)

    Djenidi, Lyazid; Antonia, Robert A.; Amielh, Muriel; Anselmet, Fabien

    2014-10-01

    Particle image velocimetry (PIV) measurements are carried out in a turbulent boundary layer over a 2D rough surface consisting of transverse square bars. The aim of this work is to investigate a possible cause for the near-wall X-wire measurement errors observed on similar rough surfaces. The PIV measurements do not show the anomalous near-wall deficit of Reynolds stresses as measured with X-wires over the same surface. An extensive flow visualization analysis of the PIV data for a spacing between the roughness elements of p = 7 k ( k is the roughness element height) shows the occurrence of large-scale inward (sweeps) and outward (ejections) motions with a period of about 10.6 δ/ U 0 ( δ and U 0 are the boundary layer thickness and the free-stream velocity). While these motions dominate the near-wall region and contribute almost equally to the Reynolds shear stress -‹ uv›, the mean outward deviation from the mean flow direction is stronger than the inward deviation. Also, when the roughness spacing is reduced to p = 3 k, the outward deviation reduces significantly more than the inward deviation. The results support the argument that the outward motions, which can have an instantaneous deviation angle of more than 50° in the case p = 7 k, make the X-wire probe inefficient for detecting the ejection events (associated with the outward motions), particularly if the apex angle of the X-wire is not optimized for capturing the strong flow ejections with large deviations. The results explain in part the disparate information on the effect of the roughness on the Reynolds stresses in the outer region of the turbulent boundary layer over rough walls.

  6. A proposal for epitaxial thin film growth in outer space

    NASA Technical Reports Server (NTRS)

    Ignatiev, Alex; Chu, C. W.

    1988-01-01

    A new concept for materials processing in space exploits the ultravacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials. Advanced thin film materials to be epitaxially grown in space include semiconductors, magnetic materials, and thin film high temperature superconductors.

  7. Origin of the low-energy emission band in epitaxially grown para-sexiphenyl nanocrystallites

    SciTech Connect

    Kadashchuk, A.; Schols, S.; Heremans, P.; Skryshevski, Yu.; Piryatinski, Yu.; Beinik, I.; Teichert, C.; Hernandez-Sosa, G.; Sitter, H.; Andreev, A.; Frank, P.; Winkler, A.

    2009-02-28

    A comparative study of steady-state and time-resolved photoluminescence of para-sexiphenyl (PSP) films grown by organic molecular beam epitaxy (OMBE) and hot wall epitaxy (HWE) under comparable conditions is presented. Using different template substrates [mica(001) and KCl(001) surfaces] as well as different OMBE growth conditions has enabled us to vary greatly the morphology of the PSP crystallites while keeping their chemical structure virtually untouched. We prove that the broad redshifted emission band has a structure-related origin rather than being due to monomolecular oxidative defects. We conclude that the growth conditions and type of template substrate impacts substantially on the film morphology (measured by atomic force microscopy) and emission properties of the PSP films. The relative intensity of the defect emission band observed in the delayed spectra was found to correlate with the structural quality of PSP crystallites. In particular, the defect emission has been found to be drastically suppressed when (i) a KCl template substrate was used instead of mica in HWE-grown films, and (ii) in the OMBE-grown films dominated by growth mounds composed of upright standing molecules as opposed to the films consisting of crystallites formed by molecules lying parallel to the substrate.

  8. Selective area epitaxy of CdTe

    NASA Astrophysics Data System (ADS)

    Luo, Y. Y.; Cavus, A.; Tamargo, M. C.

    1997-06-01

    We have performed selective area epitaxy (SAE) of CdTe layers grown by molecular beam epitaxy using a shadow mask technique. This technique was chosen over other SAE techniques due to its simplicity and its compatibility with multiple SAE patterning steps. Features as small as 50 microns × 50 microns were obtained with sharp, abrupt side walls and flat mesa tops. Separations between mesas as small as 20 microns were also obtained. Shadowing effects due to the finite thickness of the mask were reduced by placing the CdTe source in a near normal incidence position. Intimate contact between the mask and the substrate was essential in order to achieve good pattern definition.

  9. Epitaxial solar cells fabrication

    NASA Technical Reports Server (NTRS)

    Daiello, R. V.; Robinson, P. H.; Kressel, H.

    1975-01-01

    Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer.

  10. Epitaxial thin films

    DOEpatents

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  11. A Coupled Thermal, Fluid Flow, and Solidification Model for the Processing of Single-Crystal Alloy CMSX-4 Through Scanning Laser Epitaxy for Turbine Engine Hot-Section Component Repair (Part I)

    NASA Astrophysics Data System (ADS)

    Acharya, Ranadip; Bansal, Rohan; Gambone, Justin J.; Das, Suman

    2014-12-01

    Scanning laser epitaxy (SLE) is a new laser-based additive manufacturing technology under development at the Georgia Institute of Technology. SLE is aimed at the creation of equiaxed, directionally solidified, and single-crystal deposits of nickel-based superalloys through the melting of alloy powders onto superalloy substrates using a fast scanning Nd:YAG laser beam. The fast galvanometer control movement of the laser (0.2 to 2 m/s) and high-resolution raster scanning (20 to 200 µm line spacing) enables superior thermal control over the solidification process and allows the production of porosity-free, crack-free deposits of more than 1000 µm thickness. Here, we present a combined thermal and fluid flow model of the SLE process applied to alloy CMSX-4 with temperature-dependent thermo-physical properties. With the scanning beam described as a moving line source, the instantaneous melt pool assumes a convex hull shape with distinct leading edge and trailing edge characteristics. Temperature gradients at the leading and trailing edges are of order 2 × 105 and 104 K/m, respectively. Detailed flow analysis provides insights on the flow characteristics of the powder incorporating into the melt pool, showing velocities of order 1 × 10-4 m/s. The Marangoni effect drives this velocity from 10 to 15 times higher depending on the operating parameters. Prediction of the solidification microstructure is based on conditions at the trailing edge of the melt pool. Time tracking of solidification history is incorporated into the model to couple the microstructure prediction model to the thermal-fluid flow model, and to predict the probability of the columnar-to-equiaxed transition. Qualitative agreement is obtained between simulation and experimental result.

  12. Vacancies in epitaxial graphene

    SciTech Connect

    Davydov, S. Yu.

    2015-08-15

    The coherent-potential method is used to consider the problem of the influence of a finite concentration of randomly arranged vacancies on the density of states of epitaxial graphene. To describe the density of states of the substrate, simple models (the Anderson model, Haldane-Anderson model, and parabolic model) are used. The electronic spectrum of free single-sheet graphene is considered in the low-energy approximation. Charge transfer in the graphene-substrate system is discussed. It is shown that, in all cases, the density of states of epitaxial graphene decreases proportionally to the vacancy concentration. At the same time, the average charge transferred from graphene to the substrate increases.

  13. Commercial aspects of epitaxial thin film growth in outer space

    NASA Technical Reports Server (NTRS)

    Ignatiev, Alex; Chu, C. W.

    1988-01-01

    A new concept for materials processing in space exploits the ultra vacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds and large ultra vacuum volume (about 100 cu m) without walls. These space ultra vacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials especially in the area of semiconductors for microelectronics use. For such thin film materials there is expected a very large value added from space ultra vacuum processing, and as a result the application of the epitaxial thin film growth technology to space could lead to major commercial efforts in space.

  14. Ion Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Yamada, I.

    The following sections are included: * FILM FORMATION BY ION BEAMS * Fundamental Processes in Film Formation by Low Energy Ion Beams * Comparison of ICB with Other Physical Vapor Deposition Methods * Vacuum Deposition * Sputter Deposition * Ion Plating * Ion Beam Deposition * Simultaneous Deposition and Implantation * Plasma Enhanced Deposition * Section I References * ION CLUSTER BEAM DEPOSITION AND CLUSTER BEAM FORMATION * Nucleation Process * Growth and Condensation Process * Section II References * CHARACTERISTICS OF THE CLUSTER * Velocity of Clusters * Energy of Clusters * TEM Observation of Clusters * Structural Properties * Section III References * IONIZED CLUSTER BEAM DEPOSITION SYSTEM * Section IV References * FILM DEPOSITION PROCESS BY ICB * Fundamental Process * Effects of Kinetic Energy on the Film Properties * Epitaxial phenomena * Crystallographic Structure * Physical Structure of Films * Effects of the Electric Charge on the Film Properties * Section V References * APPLICATIONS * Silicon and Silicon Alloy Films * Low Temperature Epitaxy of Silicon Films * Thermally Stable a-Si Film Growth * High Quality SiO2 Film Deposition * Epitaxial A1 Films * Electromigration Resistant A1 Film * Thermally Stable Al/Si Contact * II-VI and III-V Compound Films * Thin Multiple Layered Film * CONCLUSIONS * Acknowledgements * Section VI References

  15. Epitaxial magnetic oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Belenky, Land J.

    Perovskite oxides exhibit a range of physical properties including insulator, semiconductor, metal, superconductor, ferromagnet and many more. Interactions between order parameters result in new properties such as the multiferroic materials. The production of artificial layered epitaxial magnetic heterostructures motivates this research. This requires atomic layer controlled growth which depends on selection of materials for their structural and chemical compatibility, preparation of substrates to achieve well-defined surfaces at the atomic level and the development of a deposition and analysis technique capable of controlling growth' at this level. We have used a pulsed laser deposition system with in situ reflection high-energy electron diffraction to produce epitaxial magnetic oxide heterostructures on lattice-matched substrates and have investigated a number of magnetic interactions. We have demonstrated an unusual antiferromagnetic interfacial exchange coupling between epitaxial bilayers of La0.67Sr0.33MnO 3 and SrRuO3 grown on (001) SrTiO3 substrates. The sign and magnitude of the exchange field depends on the cooling field. By interrupting the charge transfer at the interface with a very thin insulating layer, we have demonstrated this exchange biasing effect is related to the spin-dependent band structures of the materials. We have investigated the structural and magnetic properties of epitaxial multilayers and superlattices of manganites. These materials exhibit colossal magnetoresistance and the Curie temperature can be adjusted over a range of 100 K. We have fabricated La0.67Sr0.33MnO3/La 0.82Ba0.18MnO3 superlattices with layers as thin as 8 unit cells (32A). These superlattices have magnetic transition temperatures above 350 K and coercivities of approximately 10 Oe. Deposition techniques can effectively control the out-of-plane dimension on the nanoscale but control or lateral dimensions has proven more challenging. We have fabricated magnetic

  16. Lattice-Matched Hot Carrier Solar Cell with Energy Selectivity Integrated into Hot Carrier Absorber

    NASA Astrophysics Data System (ADS)

    König, Dirk; Takeda, Yasuhiko; Puthen-Veettil, Binesh; Conibeer, Gavin

    2012-10-01

    We propose a technologically feasible concept of a hot carrier (HC) solar cell (SC) which fulfills the electronic, optical, and to some extent the phononic criteria required. The energy selective process of HCs is implemented into the hot carrier absorber (HCA). Its electronic properties are investigated by a Monte-Carlo code which simulates random deviations of structure thickness and a normal distribution of random elastic electron (e-) scattering. The structure can be grown epitaxially as a HC-SC test device.

  17. A&M. Hot cell annex (TAN633) interior under construction. Hot cells ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. Hot cell annex (TAN-633) interior under construction. Hot cells and their doors are along concrete wall. Note side wall of pumice block. Photographer: Jack L. Anderson. Date: October 28, 1957. INEEL negative no. 57-5335 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  18. Misfit dislocations in epitaxy

    NASA Astrophysics Data System (ADS)

    van der Merwe, Jan H.

    2002-08-01

    This article on epitaxy highlights the following: the definition and some historical milestones; the introduction by Frenkel and Kontorowa (FK) of a truncated Fourier series to model the periodic interaction at crystalline interfaces; the invention by Frank and van der Merwe (FvdM)—using the FK model—of (interfacial) misfit dislocations as an important mechanism in accommodating misfit at epilayer-substrate interfaces; the generalization of the FvdM theory to multilayers; the application of the parabolic model by Jesser and van der Merwe to describe, for growing multilayers and superlattices, the impact of Fourier coefficients in the realization of epitaxial orientations and the stability of modes of misfit accommodation; the involvement of intralayer interaction in the latter—all features that impact on the attainment of perfection in crystallinity of thin films, a property that is so vital in the fabrication of useful uniformly thick epilayers (uniformity being another technological requirement), which also depends on misfit accommodation through the interfacial energy that function strongly in the criterion for growth modes, proposed by Bauer; and the ingenious application of the Volterra model by Matthews and others to describe misfit accommodation by dislocations in growing epilayers.

  19. Dynamic nonlinearity in epitaxial BaTi O3 films

    NASA Astrophysics Data System (ADS)

    Tyunina, M.; Savinov, M.

    2016-08-01

    Dynamic dielectric and piezoelectric constants of ferroelectrics increase proportionally to the amplitude of alternating electric field as a result of hysteretic Rayleigh-type motion of domain walls. Here a hysteresis-free quadratic field dependence of the dynamic dielectric response is experimentally demonstrated in the absence of domain walls in epitaxial BaTi O3 films. This extraordinary behavior is related to polar entities, whose presence is confirmed by the Vogel-Fulcher relaxation. The polar entities are ascribed to polarization fluctuations associated with lattice inhomogeneity.

  20. Epitaxial Silicon Doped With Antimony

    NASA Technical Reports Server (NTRS)

    Huffman, James E.; Halleck, Bradley L.

    1996-01-01

    High-purity epitaxial silicon doped with antimony made by chemical vapor deposition, using antimony pentachloride (SbCI5) as source of dopant and SiH4, SiCI2H2, or another conventional source of silicon. High purity achieved in layers of arbitrary thickness. Epitaxial silicon doped with antimony needed to fabricate impurity-band-conduction photodetectors operating at wavelengths from 2.5 to 40 micrometers.

  1. Chloride-based CVD of 3C-SiC Epitaxial Layers on On-axis 6H (0001) SiC Substrates

    NASA Astrophysics Data System (ADS)

    Leone, Stefano; Beyer, Franziska C.; Henry, Anne; Kordina, Olof; Janzén, Erik

    2010-11-01

    The growth of 3C-SiC epitaxial layers on nominally on-axis 6H-SiC Si-face substrates using the chloride-based CVD process is demonstrated. A hot-wall CVD reactor was used and HCl was added to the standard precursors (silane and ethylene). Several growth parameters were tested: temperature, in-situ surface preparation, C/Si ratio, Cl/Si ratio, and nitrogen addition. Each parameter had a very important effect on the polytype formation. In the case of 3C-SiC deposition the morphology and typology of defects could change significantly depending on the different combinations of growth conditions, including the addition of nitrogen. At a growth rate of 10 μm/h, a mirror-like surface with a single domain decorated by some parallel stripes and few epitaxial defects were obtained. The near-band gap luminescence of high quality 3C-SiC layers was characterized by very sharp lines. Microscope and AFM analysis showed a very smooth surface. A background doping in the low 1015 cm-3 range was achieved.

  2. Hot Groups.

    ERIC Educational Resources Information Center

    Vail, Kathleen

    1996-01-01

    Collaborators sparked by creative ideas and obsessed by a common task may not realize they're part of a "hot group"--a term coined by business professors Harold J. Leavitt and Jean Lipman-Blumen. Spawned by group decision making and employee empowerment, hot groups can flourish in education settings. They're typically small, short lived, and goal…

  3. 1. PLENUM WALL, SHOWING BALL AND STRING DAMPER CONTROLS. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    1. PLENUM WALL, SHOWING BALL AND STRING DAMPER CONTROLS. - Hot Springs National Park, Bathhouse Row, Lamar Bathhouse: Mechanical & Piping Systems, State Highway 7, 1 mile north of U.S. Highway 70, Hot Springs, Garland County, AR

  4. Hot gas filter and system assembly

    DOEpatents

    Lippert, Thomas Edwin; Palmer, Kathryn Miles; Bruck, Gerald Joseph; Alvin, Mary Anne; Smeltzer, Eugene E.; Bachovchin, Dennis Michael

    1999-01-01

    A filter element for separating fine dirty particles from a hot gas. The filter element comprises a first porous wall and a second porous wall. Each porous wall has an outer surface and an inner surface. The first and second porous walls being coupled together thereby forming a substantially closed figure and open at one end. The open end is formed to be coupled to a hot gas clean up system support structure. The first and second porous walls define a channel beginning at the open end and terminate at the closed end through which a filtered clean gas can flow through and out into the clean gas side of a hot gas clean up system.

  5. Hot gas filter and system assembly

    DOEpatents

    Lippert, T.E.; Palmer, K.M.; Bruck, G.J.; Alvin, M.A.; Smeltzer, E.E.; Bachovchin, D.M.

    1999-08-31

    A filter element is described for separating fine dirty particles from a hot gas. The filter element comprises a first porous wall and a second porous wall. Each porous wall has an outer surface and an inner surface. The first and second porous walls being coupled together thereby forming a substantially closed figure and open at one end. The open end is formed to be coupled to a hot gas clean up system support structure. The first and second porous walls define a channel beginning at the open end and terminate at the closed end through which a filtered clean gas can flow through and out into the clean gas side of a hot gas clean up system. 8 figs.

  6. Dislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxy

    PubMed Central

    2012-01-01

    InAs nanofins were prepared on a nanopatterned Si (001) substrate by metal-organic vapor-phase epitaxy. The threading dislocations, stacked on the lowest-energy-facet plane {111}, move along the SiO2 walls, resulting in a dislocation reduction, as confirmed by transmission electron microscopy. The dislocations were trapped within a thin InAs epilayer. The obtained 90-nm-wide InAs nanofins with an almost etching-pit-free surface do not require complex intermediate-layer epitaxial growth processes and large thickness typically required for conventional epitaxial growth. PMID:23176442

  7. Epitaxial technology for low cost solar cells

    NASA Technical Reports Server (NTRS)

    Kressel, H.; Raccah, P. M.

    1975-01-01

    Epitaxial solar cell structures on low cost silicon substrates are compared to direct diffusion substrates. Dislocation density in the epitaxial layers is found to be significantly lower than that of the substrate material. The saturation current density of diodes epitaxially formed on the substrate is commonly 2 to 3 orders of magnitude lower than for diodes formed by direct diffusion. Solar cells made epitaxially are substantially better than those made by direct diffusion into similar material.

  8. Hot piston ring tests

    NASA Astrophysics Data System (ADS)

    Allen, David J.; Tomazic, William A.

    1987-12-01

    As part of the DOE/NASA Automotive Stirling Engine Project, tests were made at NASA Lewis Research Center to determine whether appendix gap losses could be reduced and Stirling engine performance increased by installing an additional piston ring near the top of each piston dome. An MTI-designed upgraded Mod I Automotive Stirling Engine was used. Unlike the conventional rings at the bottom of the piston, these hot rings operated in a high temperature environment (700 C). They were made of a high temperature alloy (Stellite 6B) and a high temperature solid lubricant coating (NASA Lewis-developed PS-200) was applied to the cylinder walls. Engine tests were run at 5, 10, and 15 MPa operating pressure over a range of operating speeds. Tests were run both with hot rings and without to provide a baseline for comparison. Minimum data to assess the potential of both the hot rings and high temperature low friction coating was obtained. Results indicated a slight increase in power and efficiency, an increase over and above the friction loss introduced by the hot rings. Seal leakage measurements showed a significant reduction. Wear on both rings and coating was low.

  9. Hot piston ring tests

    NASA Technical Reports Server (NTRS)

    Allen, David J.; Tomazic, William A.

    1987-01-01

    As part of the DOE/NASA Automotive Stirling Engine Project, tests were made at NASA Lewis Research Center to determine whether appendix gap losses could be reduced and Stirling engine performance increased by installing an additional piston ring near the top of each piston dome. An MTI-designed upgraded Mod I Automotive Stirling Engine was used. Unlike the conventional rings at the bottom of the piston, these hot rings operated in a high temperature environment (700 C). They were made of a high temperature alloy (Stellite 6B) and a high temperature solid lubricant coating (NASA Lewis-developed PS-200) was applied to the cylinder walls. Engine tests were run at 5, 10, and 15 MPa operating pressure over a range of operating speeds. Tests were run both with hot rings and without to provide a baseline for comparison. Minimum data to assess the potential of both the hot rings and high temperature low friction coating was obtained. Results indicated a slight increase in power and efficiency, an increase over and above the friction loss introduced by the hot rings. Seal leakage measurements showed a significant reduction. Wear on both rings and coating was low.

  10. Electronic cooling via interlayer Coulomb coupling in multilayer epitaxial graphene

    PubMed Central

    Mihnev, Momchil T.; Tolsma, John R.; Divin, Charles J.; Sun, Dong; Asgari, Reza; Polini, Marco; Berger, Claire; de Heer, Walt A.; MacDonald, Allan H.; Norris, Theodore B.

    2015-01-01

    In van der Waals bonded or rotationally disordered multilayer stacks of two-dimensional (2D) materials, the electronic states remain tightly confined within individual 2D layers. As a result, electron–phonon interactions occur primarily within layers and interlayer electrical conductivities are low. In addition, strong covalent in-plane intralayer bonding combined with weak van der Waals interlayer bonding results in weak phonon-mediated thermal coupling between the layers. We demonstrate here, however, that Coulomb interactions between electrons in different layers of multilayer epitaxial graphene provide an important mechanism for interlayer thermal transport, even though all electronic states are strongly confined within individual 2D layers. This effect is manifested in the relaxation dynamics of hot carriers in ultrafast time-resolved terahertz spectroscopy. We develop a theory of interlayer Coulomb coupling containing no free parameters that accounts for the experimentally observed trends in hot-carrier dynamics as temperature and the number of layers is varied. PMID:26399955

  11. Temperature synchronized molecular layer epitaxy

    NASA Astrophysics Data System (ADS)

    Kurabayashi, T.; Nishizawa, J.

    1994-12-01

    This paper reports the first results on a modified molecular layer epitaxy (MLE) technique to deposit epitaxial GaAs films by changing the substrate temperature for alternate TEG (or TMG) and AsH 3 injection. This method of temperature synchronized molecular layer epitaxy (TSMLE) is a new concept for MLE and atomic layer epitaxy (ALE). The growth rates and the doping phenomena showed different characteristics to the conventional methods which were performed at a constant temperature. This method was effective not only for the study of monolayer growth, but also for device application, especially for the heavily doped p-type layer of which carrier concentration is 10 20 cm -3 order. Carbon doped p-type layer was achieved by TMG-AsH 3 TSMLE. The carbon concentration increased by decreasing the temperature during AsH 3 injection and by increasing the temperature during TMG injection. Zn-doped layer was achieved by TEG-AsH 3 TSMLE using DEZn as a dopant gas for p-type layer fabrication. To doped heavily, DEZn injected after AsH 3 injection and the temperature during AsH 3 injection had a suitable value at 393°C.

  12. Great Walls.

    ERIC Educational Resources Information Center

    Blackburn, Steve; Moore, Tim

    1996-01-01

    Explains why installing a well-designed indoor climbing wall can draw new users to an athletic facility. Climbing-wall design elements and gear are discussed and a checklist for working with contractors is provided.(GR)

  13. Method for rapid, controllable growth and thickness, of epitaxial silicon films

    DOEpatents

    Wang, Qi; Stradins, Paul; Teplin, Charles; Branz, Howard M.

    2009-10-13

    A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

  14. Hot Canyon

    ScienceCinema

    None

    2016-07-12

    This historical film footage, originally produced in the early 1950s as part of a series by WOI-TV, shows atomic research at Ames Laboratory. The work was conducted in a special area of the Laboratory known as the "Hot Canyon."

  15. Hot Canyon

    SciTech Connect

    2012-01-01

    This historical film footage, originally produced in the early 1950s as part of a series by WOI-TV, shows atomic research at Ames Laboratory. The work was conducted in a special area of the Laboratory known as the "Hot Canyon."

  16. Hot Tickets

    ERIC Educational Resources Information Center

    Fox, Bette-Lee; Hoffert, Barbara; Kuzyk, Raya; McCormack, Heather; Williams, Wilda

    2008-01-01

    This article describes the highlights of this year's BookExpo America (BEA) held at the Los Angeles Convention Center. The attendees at BEA had not minded that the air was recycled, the lighting was fluorescent, and the food was bad. The first hot book sighting came courtesy of Anne Rice. Michelle Moran, author of newly published novel, "The…

  17. Solar Hot Water Heater

    NASA Technical Reports Server (NTRS)

    1978-01-01

    The solar panels pictured below, mounted on a Moscow, Idaho home, are part of a domestic hot water heating system capable of providing up to 100 percent of home or small business hot water needs. Produced by Lennox Industries Inc., Marshalltown, Iowa, the panels are commercial versions of a collector co-developed by NASA. In an effort to conserve energy, NASA has installed solar collectors at a number of its own facilities and is conducting research to develop the most efficient systems. Lewis Research Center teamed with Honeywell Inc., Minneapolis, Minnesota to develop the flat plate collector shown. Key to the collector's efficiency is black chrome coating on the plate developed for use on spacecraft solar cells, the coating prevents sun heat from "reradiating," or escaping outward. The design proved the most effective heat absorber among 23 different types of collectors evaluated in a Lewis test program. The Lennox solar domestic hot water heating system has three main components: the array of collectors, a "solar module" (blue unit pictured) and a conventional water heater. A fluid-ethylene glycol and water-is circulated through the collectors to absorb solar heat. The fluid is then piped to a double-walled jacket around a water tank within the solar module.

  18. Epitaxial silicon growth for solar cells

    NASA Technical Reports Server (NTRS)

    Daiello, R. V.; Robinson, P. H.; Richman, D.

    1979-01-01

    The epitaxial procedures, solar cell fabrication, and evaluation techniques are described. The development of baseline epitaxial solar cell structures grown on high quality conventional silicon substrates is discussed. Diagnostic layers and solar cells grown on four potentially low cost silicon substrates are considered. The crystallographic properties of such layers and the performance of epitaxially grown solar cells fabricated on these materials are described. An advanced epitaxial reactor, the rotary disc, is described along with the results of growing solar cell structures of the baseline type on low cost substrates. The add on cost for the epitaxial process is assessed and the economic advantages of the epitaxial process as they relate to silicon substrate selection are examined.

  19. Oxidation of epitaxial Ce films

    NASA Astrophysics Data System (ADS)

    Vescovo, E.; Carbone, C.

    1996-02-01

    Single-crystal Ce films of more than 300 Å thickness have been epitaxially grown on W(110). Their interaction with molecular oxygen at room temperature has been studied by angle-resolved photoemission, low-energy electron diffraction, and Auger spectroscopy. As a function of the oxygen exposure, the reaction is found to proceed through a sequence of three distinct stages: (i) ordered dissociative surface adsorption; (ii) formation of an ordered Ce2O3-like surface oxide; and (iii) gradual conversion of the sesquioxide into a disordered surface dioxide CeO2-x. A structurally different Ce2O3 oxide is obtained after high oxygen exposures followed by heating at 450 K. The formation of the epitaxial surface sesquioxides is favored by the good lattice match with the Ce substrate. The same type of structural relation might lead to the formation of ordered sesquioxides on other rare-earth surfaces exposing hexagonal planes.

  20. Chemical Vapor Deposition Epitaxy an Patternless and Patterned Substrates.

    ERIC Educational Resources Information Center

    Takoudis, Christos G.

    1990-01-01

    Discusses chemical vapor deposition epitaxy on patternless and patterned substrates for an electronic materials processing course. Describes the processs types and features of epitaxy. Presents some potential problems of epitaxy. Lists 38 references. (YP)

  1. Recent developments in droplet epitaxy

    SciTech Connect

    Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Abbarchi, Marco; Noda, Takeshi; Sakoda, Kazuaki

    2014-05-15

    The droplet epitaxy allows for self-assembly of lattice-matched GaAs quantum dots (QDs) with high quality and high uniformity. In this article, we show our efforts to realize the GaAs QDs with excellent optical properties. After the optimization of the several growth processes, we achieved current-injection lasing in the GaAs QDs. In addition, formation of further advanced nanostructure is presented.

  2. Wonderful Walls

    ERIC Educational Resources Information Center

    Greenman, Jim

    2006-01-01

    In this article, the author emphasizes the importance of "working" walls in children's programs. Children's programs need "working" walls (and ceilings and floors) which can be put to use for communication, display, storage, and activity space. The furnishings also work, or don't work, for the program in another sense: in aggregate, they serve as…

  3. Epitaxial growth of CZT(S,Se) on silicon

    DOEpatents

    Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu

    2016-03-15

    Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

  4. Hot Meetings

    NASA Technical Reports Server (NTRS)

    Chiu, Mary

    2002-01-01

    A colleague walked by my office one time as I was conducting a meeting. There were about five or six members of my team present. The colleague, a man who had been with our institution (The Johns Hopkins Applied Physics Lab, a.k.a. APL) for many years, could not help eavesdropping. He said later it sounded like we we re having a raucous argument, and he wondered whether he should stand by the door in case things got out of hand and someone threw a punch. Our Advanced Composition Explorer (ACE) team was a hot group, to invoke the language that is fashionable today, although we never thought of ourselves in those terms. It was just our modus operandi. The tenor of the discussion got loud and volatile at times, but I prefer to think of it as animated, robust, or just plain collaborative. Mary Chiu and her "hot" team from the Johns Hopkins Applied Physics Laboratory built the Advanced Composition Explorer spacecraft for NASA. Instruments on the spacecraft continue to collect data that inform us about what's happening on our most important star, the Sun.

  5. Seismic evaluation of a hot cell structure

    SciTech Connect

    Srinivasan, M.G.; Kot, C.A.

    1995-07-01

    The evaluation of the structural capacity of and the seismic demand on an existing hot cell structure in a nuclear facility is described. An ANSYS finite-element model of the cell was constructed, treating the walls as plates and the floor and ceiling as a system of discrete beams. A modal analysis showed that the fundamental frequencies of the cell walls lie far above the earthquake frequency range. An equivalent static analysis of the structure was performed. Based on the analysis it was demonstrated that the hot cell structure, would readily withstand the evaluation basis earthquake.

  6. Epitaxial growth of europium monoxide on diamond

    SciTech Connect

    Melville, A.; Heeg, T.; Mairoser, T.; Schmehl, A.; Fischer, M.; Gsell, S.; Schreck, M.; Awschalom, D. D.; Holländer, B.; Schubert, J.; Schlom, D. G.

    2013-11-25

    We report the epitaxial integration of phase-pure EuO on both single-crystal diamond and on epitaxial diamond films grown on silicon utilizing reactive molecular-beam epitaxy. The epitaxial orientation relationship is (001) EuO ‖ (001) diamond and [110] EuO ‖[100] diamond. The EuO layer is nominally unstrained and ferromagnetic with a transition temperature of 68 ± 2 K and a saturation magnetization of 5.5 ± 0.1 Bohr magnetons per europium ion on the single-crystal diamond, and a transition temperature of 67 ± 2 K and a saturation magnetization of 2.1 ± 0.1 Bohr magnetons per europium ion on the epitaxial diamond film.

  7. Lateral diffusion epitaxy (LDE) of single crystal silicon with downward facing substrate

    NASA Astrophysics Data System (ADS)

    Yu, Luke H. L.; Li, Bo; Shen, Huaxiang; Kitai, Adrian H.

    2012-10-01

    An increase in the aspect ratio of silicon platelets grown by Lateral Diffusion Epitaxy (LDE) is achieved. Epitaxial growth is achieved by a compound graphite slider boat in which an oxidized silicon plate is placed above the seed line on the substrate. The function of the plate is to i) favor side wall growth by limiting vertical nucleation on the platelets, and ii) to enhance the surface smoothness by restricting diffusion of silicon to a horizontal direction. We have studied layer growth from the In-Si liquid phase by reducing the gap between substrate and plate. By reducing the gap, it allows for a more uniform growth of silicon from the side wall of the strip. In addition, we investigate repositioning the silicon seed line to a downward orientation. In this case, the diffusion rate increases due to a gravity effect.

  8. Effect of substrate temperature on the magnetic properties of epitaxial sputter-grown Co/Pt

    SciTech Connect

    Mihai, A. P.; Whiteside, A. L.; Canwell, E. J.; Marrows, C. H.; Moore, T. A.; Benitez, M. J.; McGrouther, D.; McVitie, S.; McFadzean, S.

    2013-12-23

    Epitaxial Co/Pt films have been deposited by dc-magnetron sputtering onto heated C-plane sapphire substrates. X-ray diffraction, the residual resistivity, and transmission electron microscopy indicate that the Co/Pt films are highly ordered on the atomic scale. The coercive field and the perpendicular magnetic anisotropy increase as the substrate temperature is increased from 100–250 °C during deposition of the Co/Pt. Measurement of the domain wall creep velocity as a function of applied magnetic field yields the domain wall pinning energy, which scales with the coercive field. Evidence for an enhanced creep velocity in highly ordered epitaxial Co/Pt is found.

  9. Molecular-Beam-Epitaxy Program

    NASA Technical Reports Server (NTRS)

    Sparks, Patricia D.

    1988-01-01

    Molecular Beam Epitaxy (MBE) computer program developed to aid in design of single- and double-junction cascade cells made of silicon. Cascade cell has efficiency 1 or 2 percent higher than single cell, with twice the open-circuit voltage. Input parameters include doping density, diffusion lengths, thicknesses of regions, solar spectrum, absorption coefficients of silicon (data included for 101 wavelengths), and surface recombination velocities. Results include maximum power, short-circuit current, and open-circuit voltage. Program written in FORTRAN IV.

  10. Transitional Boundary Layers Under the Influence of High Free Stream Turbulence, Intensive Wall Cooling and High Pressure Gradients in Hot Gas Circulation. Ph.D. Thesis - Technische Hochschule, Karlsruhe, 1985

    NASA Technical Reports Server (NTRS)

    Rued, Klaus

    1987-01-01

    The requirements for fundamental experimental studies of the influence of free stream turbulence, pressure gradients and wall cooling are discussed. Under turbine-like free stream conditions, comprehensive tests of transitional boundary layers with laminar, reversing and turbulent flow increments were performed to decouple the effects of the parameters and to determine the effects during mutual interaction.

  11. Micro-grooved heat transfer combustor wall

    NASA Technical Reports Server (NTRS)

    Ward, Steven D. (Inventor)

    1994-01-01

    A gas turbine engine hot section combustor liner is provided a non-film cooled portion of a heat transfer wall having a hot surface and a plurality of longitudinally extending micro-grooves disposed in the portion of the wall along the hot surface in a direction parallel to the direction of the hot gas flow. The depth of the micro-grooves is very small and on the order of magnitude of a predetermined laminar sublayer of a turbulent boundary layer. The micro-grooves are sized so as to inhibit heat transfer from the hot gas flow to the hot surface of the wall while reducing NOx emissions of the combustor relative to an otherwise similar combustor having a liner wall portion including film cooling apertures. In one embodiment the micro-grooves are about 0.001 inches deep and have a preferred depth range of from about 0.001 inches to 0.005 inches and which are square, rectangular, or triangular in cross-section and the micro-grooves are spaced about one width apart.

  12. Wall Turbulence.

    ERIC Educational Resources Information Center

    Hanratty, Thomas J.

    1980-01-01

    This paper gives an account of research on the structure of turbulence close to a solid boundary. Included is a method to study the flow close to the wall of a pipe without interferring with it. (Author/JN)

  13. Thermal breaking systems for metal stud walls -- Can metal stud walls perform as well as wood stud walls

    SciTech Connect

    Kosny, J.; Christian, J.E.; Desjarlais, A.O.

    1997-12-31

    Metal stud wall systems for residential buildings are gaining in popularity. Strong thermal bridges caused by highly conductive metal studs degrade the thermal performance of such walls. Several wall configurations have been developed to improve their thermal performance. The authors tried to evaluate some of these wall systems. The thermal performance of metal stud walls is frequently compared with that of wood stud walls. A reduction of the in-cavity R-value caused by the wood studs is about 10% in wood stud walls. In metal stud walls, thermal bridges generated by the metal components reduce their thermal performance by up to 55%. Today, metal stud walls are believed to be considerably less thermally effective than similar systems made of wood because steel has much higher thermal conductivity than wood. Relatively high R-values may be achieved by installing insulating sheathing, which is now widely recommended as the remedy for weak thermal performance of metal stud walls. A series of promising metal stud wall configurations was analyzed. Some of these walls were designed and tested by the authors, some were tested in other laboratories, and some were developed and forgotten a long time ago. Several types of thermal breaking systems were used in these walls. Two- and three-dimensional finite-difference computer simulations were used to analyze 20 metal stud wall configurations. Also, a series of hot-box tests were conducted on several of these walls. Test results for 22 additional metal stud walls were analyzed. Most of these walls contained conventional metal studs. Commonly used fiberglass and EPS were used as insulation materials. The most promising metal stud wall configurations have reductions in the center-of-cavity R-values of less than 20%.

  14. Origin and reduction of impurities at GaAs epitaxial layer-substrate interfaces

    NASA Astrophysics Data System (ADS)

    Kanber, H.; Yang, H. T.; Zielinski, T.; Whelan, J. M.

    1988-09-01

    Surface cleaning techniques used for semi-insulating GaAs substrates prior to epitaxial growth can have an important and sometimes detrimental effect on the quality and characteristics of epitaxial layers that are grown on them. We observe that a HF rinse followed by a 5:1:1 H 2SO 4:H 2O 2:H 2O etch and H 2O rinse drastically reduced the maximum concentrations and total amount of both SIMS detected S and Si for MOCVD grown GaAs undoped epitaxial layers. Subsequent final HCl and H 2O reduced the S interfacial residues to the SIMS detection limit. Total amounts of residual Si are estimated to be equivalent to 10 -2 to 10 -3 monolayers. Residual S is less. Alternately the S residue can be comparable reduced by a HF rinse followed by a NH 4OH:H 2O 2:H 2O etch and H 2O rinse. Hot aqueous HCl removes S but not Si residues. The Si residue is not electrically active and most likely exists as islands of SiO 2. The relative significance of the impurity residues is most pronounced for halide VPE, smaller for MBE and least for MOCVD grown GaAs epitaxial layers.

  15. Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass: Preprint

    SciTech Connect

    Young, D. L.; Grover, S.; Teplin, C.; Stradins, P.; LaSalvia, V.; Chuang, T. K.; Couillard, J. G.; Branz, H. M.

    2012-06-01

    We report characterizations of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (Voc) above 560 mV. The 2-um absorber cells are grown by low-temperature (<750 degrees C) hot-wire CVD (HWCVD) on Corning EAGLE XG display glass coated with a layer-transferred (LT) Si seed. The high Voc is a result of low-defect epitaxial Si (epi-Si) growth and effective hydrogen passivation of defects. The quality of HWCVD epitaxial growth on seeded glass substrates depends on the crystallographic quality of the seed and the morphology of the epitaxial growth surface. Heterojunction devices consist of glass/c-Si LT seed/ epi n+ Si:P/epi n- Si:P/intrinsic a-Si:H/p+ a-Si:H/ITO. Similar devices grown on electronically 'dead' n+ wafers have given Voc {approx}630 mV and {approx}8% efficiency with no light trapping features. Here we study the effects of the seed surface polish on epi-Si quality, how hydrogenation influences the device character, and the dominant junction transport physics.

  16. Epitaxial growth and stress relaxation of vapor-deposited Fe-Pd magnetic shape memory films

    NASA Astrophysics Data System (ADS)

    Kühnemund, L.; Edler, T.; Kock, I.; Seibt, M.; Mayr, S. G.

    2009-11-01

    To achieve maximum performance in microscale magnetic shape memory actuation devices epitaxial films several hundred nanometers thick are needed. Epitaxial films were grown on hot MgO substrates (500 °C and above) by e-beam evaporation. Structural properties and stress relaxation mechanisms were investigated by high-resolution transmission electron microscopy, in situ substrate curvature measurements and classical molecular dynamics (MD) simulations. The high misfit stress incorporated during Vollmer-Weber growth at the beginning was relaxed by partial or perfect dislocations depending on the substrate temperature. This relaxation allowed the avoidance of a stress-induced breakdown of epitaxy and no thickness limit for epitaxy was found. For substrate temperatures of 690 °C or above, the films grew in the fcc austenite phase. Below this temperature, iron precipitates were formed. MD simulations showed how these precipitates influence the movements of partial dislocations, and can thereby explain the higher stress level observed in the experiments in the initial stage of growth for these films.

  17. Epitaxial silicon devices for dosimetry applications

    SciTech Connect

    Bruzzi, M.; Bucciolini, M.; Casati, M.; Menichelli, D.; Talamonti, C.; Piemonte, C.; Svensson, B. G.

    2007-04-23

    A straightforward improvement of the efficiency and long term stability of silicon dosimeters has been obtained with a n{sup +}-p junction surrounded by a guard-ring structure implanted on an epitaxial p-type Si layer grown on a Czochralski substrate. The sensitivity of devices made on 50-{mu}m-thick epitaxial Si degrades by only 7% after an irradiation with 6 MeV electrons up to 1.5 kGy, and shows no significant further decay up to 10 kGy. These results prove the enhanced radiation tolerance and stability of epitaxial diodes as compared to present state-of-the-art Si devices.

  18. Epitaxial growth of single crystal films

    NASA Technical Reports Server (NTRS)

    Lind, M. D.; Kroes, R. L.; Immorlica, A. A., Jr.

    1981-01-01

    An experiment in gallium arsenide liquid phase epitaxy (LPE) on a flight of the SPAR 6 is described. A general purpose LPE processor suitable for either SPAR or Space Transportation System flights was designed and built. The process was started before the launch, and only the final step, in which the epitaxial film is grown, was performed during the flight. The experiment achieved its objectives; epitaxial films of reasonably good quality and very nearly the thickness predicted for convection free diffusion limited growth were produced. The films were examined by conventional analytical techniques and compared with films grown in normal gravity.

  19. High throughput vacuum chemical epitaxy

    NASA Astrophysics Data System (ADS)

    Fraas, L. M.; Malocsay, E.; Sundaram, V.; Baird, R. W.; Mao, B. Y.; Lee, G. Y.

    1990-10-01

    We have developed a vacuum chemical epitaxy (VCE) reactor which avoids the use of arsine and allows multiple wafers to be coated at one time. Our vacuum chemical epitaxy reactor closely resembles a molecular beam epitaxy system in that wafers are loaded into a stainless steel vacuum chamber through a load chamber. Also as in MBE, arsenic vapors are supplied as reactant by heating solid arsenic sources thereby avoiding the use of arsine. However, in our VCE reactor, a large number of wafers are coated at one time in a vacuum system by the substitution of Group III alkyl sources for the elemental metal sources traditionally used in MBE. Higher wafer throughput results because in VCE, the metal-alkyl sources for Ga, Al, and dopants can be mixed at room temperature and distributed uniformly though a large area injector to multiple substrates as a homogeneous array of mixed element molecular beams. The VCE reactor that we have built and that we shall describe here uniformly deposits films on 7 inch diameter substrate platters. Each platter contains seven two inch or three 3 inch diameter wafers. The load chamber contains up to nine platters. The vacuum chamber is equipped with two VCE growth zones and two arsenic ovens, one per growth zone. Finally, each oven has a 1 kg arsenic capacity. As of this writing, mirror smooth GaAs films have been grown at up to 4 μm/h growth rate on multiple wafers with good thickness uniformity. The background doping is p-type with a typical hole concentration and mobility of 1 × 10 16/cm 3 and 350 cm 2/V·s. This background doping level is low enough for the fabrication of MESFETs, solar cells, and photocathodes as well as other types of devices. We have fabricated MESFET devices using VCE-grown epi wafers with peak extrinsic transconductance as high as 210 mS/mm for a threshold voltage of - 3 V and a 0.6 μm gate length. We have also recently grown AlGaAs epi layers with up to 80% aluminum using TEAl as the aluminum alkyl source. The Al

  20. Brush Seal Would Impede Flow Of Hot Gas

    NASA Technical Reports Server (NTRS)

    Carroll, Paul F.; Easter, Barry P.

    1993-01-01

    Proposed brush seal helps prevent recirculating flow of hot combustion gases from reaching bellows seal located deep in gap in wall of combustion chamber. More durable, more tolerant of irregularities, and easier to install. Seals also helpful in impeding deleterious flows of hot gases in other combustion chambers such as those of furnaces and turbomachines.

  1. 'Stucco' Walls

    NASA Technical Reports Server (NTRS)

    2004-01-01

    This projected mosaic image, taken by the microscopic imager, an instrument located on the Mars Exploration Rover Opportunity 's instrument deployment device, or 'arm,' shows the partial clotting or cement-like properties of the sand-sized grains within the trench wall. The area in this image measures approximately 3 centimeters (1.2 inches) wide and 5 centimeters (2 inches) tall.(This image also appears as an inset on a separate image from the rover's navigation camera, showing the location of this particular spot within the trench wall.)

  2. Are hot Neptunes partially evaporated hot Jupiters?

    NASA Astrophysics Data System (ADS)

    Boué, G.; Figueira, P.; Correia, A. C. M.; Santos, N. C.

    2011-10-01

    The detection of short period planets (hot Jupiters and their lower mass counterparts, hot Neptunes and super-Earths) still defies the models of planet formation and evolution. Several possibilities have been proposed to explain the nature and formation process of the lower mass population, including in situ formation, disk migration, planet-planet scattering and kozai evolution, and the evaporation of a higher mass hot Jupiter. Using dynamical models and the best estimates for evaporation velocities, we show that under reasonable (and observed) physical conditions, hot Jupiter evaporation may explain the observed population of hot Neptunes/super-Earths.

  3. Are Hot Neptunes Partialy Evaporated Hot Jupiters?

    NASA Astrophysics Data System (ADS)

    Santos, Nuno; Boue, G.; Figueira, P.; Correia, A.

    2011-09-01

    The detection of short period planets (hot Jupiters and their lower mass counterparts, hot neptunes and super-earths) still defies the models of planet formation and evolution. Several possibilities have been proposed to explain the nature and formation process of the lower mass population, including in situ formation, disk migration, planet-planet scattering and kozai evolution, and the evaporation of a higher mass hot Jupiter. Using dynamical models and the best estimates for evaporation velocities, we show that under reasonable (and observed) physical conditions, hot Jupiter evaporation can explain the observed population of hot Neptunes/super-Earths.

  4. HOT CELL BUILDING, TRA632, INTERIOR. CONTEXTUAL VIEW OF HOT CELL ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    HOT CELL BUILDING, TRA-632, INTERIOR. CONTEXTUAL VIEW OF HOT CELL NO. 2 FROM STAIRWAY ALONG NORTH WALL. OBSERVATION WINDOW ALONG WEST SIDE BENEATH "CELL 2" SIGN. DOORWAY IN LEFT OF VIEW LEADS TO CELL 1 WORK AREA OR TO EXIT OUTDOORS TO NORTH. RADIATION DETECTION MONITOR TO RIGHT OF DOOR. CAMERA FACING SOUTHWEST. INL NEGATIVE NO. HD46-28-3. Mike Crane, Photographer, 2/2005 - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

  5. Epitaxial growth of silicon for layer transfer

    DOEpatents

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  6. Epitaxial growth of single crystal films

    NASA Technical Reports Server (NTRS)

    Lind, M. D.

    1980-01-01

    An experiment in gallium arsenide liquid phase epitaxy was performed successfully on the SPAR 6 flight October 17, 1979. The design, fabrication, and testing of the experimental apparatus, and the performance and results of the experiment are discussed.

  7. Extracting hot carriers from photoexcited semiconductor nanocrystals

    SciTech Connect

    Zhu, Xiaoyang

    2014-12-10

    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  8. Silicon Holder For Molecular-Beam Epitaxy

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.

    1993-01-01

    Simple assembly of silicon wafers holds silicon-based charge-coupled device (CCD) during postprocessing in which silicon deposited by molecular-beam epitaxy. Attains temperatures similar to CCD, so hotspots suppressed. Coefficients of thermal expansion of holder and CCD equal, so thermal stresses caused by differential thermal expansion and contraction do not develop. Holder readily fabricated, by standard silicon processing techniques, to accommodate various CCD geometries. Silicon does not contaminate CCD or molecular-beam-epitaxy vacuum chamber.

  9. Epitaxial Deposition Of Germanium Doped With Gallium

    NASA Technical Reports Server (NTRS)

    Huffman, James E.

    1994-01-01

    Epitaxial layers of germanium doped with gallium made by chemical vapor deposition. Method involves combination of techniques and materials used in chemical vapor deposition with GeH4 or GeCl4 as source of germanium and GaCl3 as source of gallium. Resulting epitaxial layers of germanium doped with gallium expected to be highly pure, with high crystalline quality. High-quality material useful in infrared sensors.

  10. Wall Covering

    NASA Technical Reports Server (NTRS)

    1978-01-01

    The attractive wall covering shown below is one of 132 styles in the Mirror Magic II line offered by The General Tire & Rubber Company, Akron, Ohio. The material is metallized plastic fabric, a spinoff from space programs. Wall coverings are one of many consumer applications of aluminized plastic film technology developed for NASA by a firm later bought by King-Seeley Thermos Company, Winchester, Massachusetts, which now produces the material. The original NASA use was in the Echo 1 passive communications satellite, a "space baloon" made of aluminized mylar; the high reflectivity of the metallized coating enabled relay of communications signals from one Earth station to another by "bouncing" them off the satellite. The reflectivity feature also made the material an extremely efficient insulator and it was subsequently widely used in the Apollo program for such purposes as temperature control of spacecraft components and insulation of tanks for fuels that must be maintained at very low temperatures. I Used as a wall covering, the aluminized material offers extra insulation, reflects light and I resists cracking. In addition to General Tire, King-Seeley also supplies wall covering material to Columbus Coated Fabrics Division of Borden, Incorporated, Columbus, Ohio, among others.

  11. Wall Art

    ERIC Educational Resources Information Center

    McGinley, Connie Q.

    2004-01-01

    The author of this article, an art teacher at Monarch High School in Louisville, Colorado, describes how her experience teaching in a new school presented an exciting visual challenge for an art teacher--monotonous brick walls just waiting for decoration. This school experienced only minimal instances of graffiti, but as an art teacher, she did…

  12. Defect-Induced Photoluminescence Blinking of Single Epitaxial InGaAs Quantum Dots

    NASA Astrophysics Data System (ADS)

    Hu, Fengrui; Cao, Zengle; Zhang, Chunfeng; Wang, Xiaoyong; Xiao, Min

    2015-03-01

    Here we report two types of defect-induced photoluminescence (PL) blinking behaviors observed in single epitaxial InGaAs quantum dots (QDs). In the first type of PL blinking, the ``off'' period is caused by the trapping of hot electrons from the higher-lying excited state (absorption state) to the defect site so that its PL rise lifetime is shorter than that of the ``on'' period. For the ``off'' period in the second type of PL blinking, the electrons relax from the first excited state (emission state) into the defect site, leading to a shortened PL decay lifetime compared to that of the ``on'' period. This defect-induced exciton quenching in epitaxial QDs, previously demonstrated also in colloidal nanocrystals, confirms that these two important semiconductor nanostructures could share the same PL blinking mechanism.

  13. Enhanced cold wall CVD reactor growth of horizontally aligned single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Mu, Wei; Kwak, Eun-Hye; Chen, Bingan; Huang, Shirong; Edwards, Michael; Fu, Yifeng; Jeppson, Kjell; Teo, Kenneth; Jeong, Goo-Hwan; Liu, Johan

    2016-05-01

    HASynthesis of horizontally-aligned single-walled carbon nanotubes (HA-SWCNTs) by chemical vapor deposition (CVD) directly on quartz seems very promising for the fabrication of future nanoelectronic devices. In comparison to hot-wall CVD, synthesis of HA-SWCNTs in a cold-wall CVD chamber not only means shorter heating, cooling and growth periods, but also prevents contamination of the chamber. However, since most synthesis of HA-SWCNTs is performed in hot-wall reactors, adapting this well-established process to a cold-wall chamber becomes extremely crucial. Here, in order to transfer the CVD growth technology from a hot-wall to a cold-wall chamber, a systematic investigation has been conducted to determine the influence of process parameters on the HA-SWCNT's growth. For two reasons, the cold-wall CVD chamber was upgraded with a top heater to complement the bottom substrate heater; the first reason to maintain a more uniform temperature profile during HA-SWCNTs growth, and the second reason to preheat the precursor gas flow before projecting it onto the catalyst. Our results show that the addition of a top heater had a significant effect on the synthesis. Characterization of the CNTs shows that the average density of HA-SWCNTs is around 1 - 2 tubes/ μm with high growth quality as shown by Raman analysis. [Figure not available: see fulltext.

  14. Epitaxial graphene quantum dots for high-performance terahertz bolometers

    NASA Astrophysics Data System (ADS)

    El Fatimy, Abdel; Myers-Ward, Rachael L.; Boyd, Anthony K.; Daniels, Kevin M.; Gaskill, D. Kurt; Barbara, Paola

    2016-04-01

    Light absorption in graphene causes a large change in electron temperature due to the low electronic heat capacity and weak electron-phonon coupling. This property makes graphene a very attractive material for hot-electron bolometers in the terahertz frequency range. Unfortunately, the weak variation of electrical resistance with temperature results in limited responsivity for absorbed power. Here, we show that, due to quantum confinement, quantum dots of epitaxial graphene on SiC exhibit an extraordinarily high variation of resistance with temperature (higher than 430 MΩ K-1 below 6 K), leading to responsivities of 1 × 1010 V W-1, a figure that is five orders of magnitude higher than other types of graphene hot-electron bolometer. The high responsivity, combined with an extremely low electrical noise-equivalent power (˜2 × 10-16 W Hz-1/2 at 2.5 K), already places our bolometers well above commercial cooled bolometers. Additionally, we show that these quantum dot bolometers demonstrate good performance at temperature as high as 77 K.

  15. Flow Characteristics of Plane Wall Jet with Side Walls on Both Sides

    NASA Astrophysics Data System (ADS)

    Imao, Shigeki; Kikuchi, Satoshi; Kozato, Yasuaki; Hayashi, Takayasu

    Flow characteristics of a two-dimensional jet with side walls have been studied experimentally. Three kinds of cylindrical walls and a flat wall were provided as the side walls, and they were combined and attached to a nozzle. Nine types of side wall conditions were investigated. Velocity was measured by a hot-wire probe and the separation point was measured by a Pitot tube. Mean velocity profiles, the growth of the jet half-width, the decay of jet maximum velocity, and the attachment distance were clarified. When cylindrical walls with different radii are installed, the flow pattern changes markedly depending on the velocity of the jet. A striking increase in the jet half-width is related to the separation of flow from the smaller cylindrical wall just behind the nozzle.

  16. Nanoimprint-lithography patterned epitaxial Fe nanowire arrays with misaligned magnetocrystalline and shape anisotropies

    SciTech Connect

    Zhang, Wei; Bowden, Mark E.; Krishnan, Kannan M.

    2013-01-01

    We fabricated large area (>1 × 1 cm2), epitaxial Fe nanowire arrays on MgO(001) substrates by nanoimprint lithography with a direct metallization of epitaxial materials through a metallic mask, which avoided the disadvantageous metal-etching process in conventional methods. The magnetization reversals, as revealed by magneto-optic Kerr effect, showed competing effects between Fe cubic magnetocrystalline anisotropy and lithographically induced uniaxial shape anisotropy. Unlike the weakly induced uniaxial anisotropy observed in continuous films, both the magnitude and direction of the uniaxial shape anisotropy can be easily modulated in the nanowires. Complex magnetization reversal processes including two-step and three-step loops were observed when magnetizing the samples along different Fe cubic easy axes, respectively. Finally, these modified magnetization reversal processes were explained by the nucleation and propagation of the domain walls along the non-superimposed easy axes of the competing magnetocrystalline and shape anisotropies.

  17. Stereo-epitaxial growth of single-crystal Ni nanowires and nanoplates from aligned seed crystals

    NASA Astrophysics Data System (ADS)

    Lee, Hyoban; Yoo, Youngdong; Kang, Taejoon; Lee, Jiyoung; Kim, Eungwang; Fang, Xiaosheng; Lee, Sungyul; Kim, Bongsoo

    2016-05-01

    Epitaxially grown anisotropic Ni nanostructures are promising building blocks for the development of miniaturized and stereo-integrated data storage kits because they can store multiple magnetic domain walls (DWs). Here, we report stereo-epitaxially grown single-crystalline Ni nanowires (NWs) and nanoplates, and their magnetic properties. Vertical and inclined Ni NWs were grown at the center and edge regions of c-cut sapphire substrates, respectively. Vertical Ni nanoplates were grown on r-cut sapphire substrates. The morphology and growth direction of Ni nanostructures can be steered by seed crystals. Cubic Ni seeds grow into vertical Ni NWs, tetrahedral Ni seeds grow into inclined Ni NWs, and triangular Ni seeds grow into vertical Ni nanoplates. The shapes of the Ni seeds are determined by the interfacial energy between the bottom plane of the seeds and the substrates. The as-synthesized Ni NWs and nanoplates have blocking temperature values greater than 300 K at 500 Oe, verifying that these Ni nanostructures can form large magnetic DWs with high magnetic anisotropy properties. We anticipate that epitaxially grown Ni NWs and nanoplates will be used in various types of 3-dimensional magnetic devices.Epitaxially grown anisotropic Ni nanostructures are promising building blocks for the development of miniaturized and stereo-integrated data storage kits because they can store multiple magnetic domain walls (DWs). Here, we report stereo-epitaxially grown single-crystalline Ni nanowires (NWs) and nanoplates, and their magnetic properties. Vertical and inclined Ni NWs were grown at the center and edge regions of c-cut sapphire substrates, respectively. Vertical Ni nanoplates were grown on r-cut sapphire substrates. The morphology and growth direction of Ni nanostructures can be steered by seed crystals. Cubic Ni seeds grow into vertical Ni NWs, tetrahedral Ni seeds grow into inclined Ni NWs, and triangular Ni seeds grow into vertical Ni nanoplates. The shapes of the Ni

  18. MHD Electrode and wall constructions

    DOEpatents

    Way, Stewart; Lempert, Joseph

    1984-01-01

    Electrode and wall constructions for the walls of a channel transmitting the hot plasma in a magnetohydrodynamic generator. The electrodes and walls are made of a plurality of similar modules which are spaced from one another along the channel. The electrodes can be metallic or ceramic, and each module includes one or more electrodes which are exposed to the plasma and a metallic cooling bar which is spaced from the plasma and which has passages through which a cooling fluid flows to remove heat transmitted from the electrode to the cooling bar. Each electrode module is spaced from and electrically insulated from each adjacent module while interconnected by the cooling fluid which serially flows among selected modules. A wall module includes an electrically insulating ceramic body exposed to the plasma and affixed, preferably by mechanical clips or by brazing, to a metallic cooling bar spaced from the plasma and having cooling fluid passages. Each wall module is, similar to the electrode modules, electrically insulated from the adjacent modules and serially interconnected to other modules by the cooling fluid.

  19. Cooling wall

    SciTech Connect

    Nosenko, V.I.

    1995-07-01

    Protecting the shells of blast furnaces is being resolved by installing cast iron cooling plates. The cooling plates become non-operational in three to five years. The problem is that defects occur in manufacturing the cooling plates. With increased volume and intensity of work placed on blast furnaces, heat on the cast iron cooling plates reduces their reliability that limits the interim repair period of blast furnaces. Scientists and engineers from the Ukraine studied this problem for several years, developing a new method of cooling the blast furnace shaft called the cooling wall. Traditional cast iron plates were replaced by a screen of steel tubes, with the area between the tubes filled with fireproof concrete. Before placing the newly developed furnace shaft into operation, considerable work was completed such as theoretical calculations, design, research of temperature fields and tension. Continual testing over many years confirms the value of this research in operating blast furnaces. The cooling wall works with water cooling as well as vapor cooling and is operating in 14 blast furnaces in the Ukraine and two in Russia, and has operated for as long as 14 years.

  20. Soft Crystals in Flatland: Unraveling Epitaxial Growth.

    PubMed

    Ward, Michael D

    2016-07-26

    Thin film epitaxy typically invokes a superposition of a pair of rigid two-dimensional lattices with a well-defined orientation governed by some form of commensurism. A report by Meissner et al. in this issue of ACS Nano demonstrates that the organization of organic molecules on substrates may not be that simple, as static distortion waves involving miniscule shifts of atomic positions from substrate lattice points can lead to orientations of a molecular film that cannot be described by often used models. Herein, we provide some highlights of epitaxy, with a focus on configurations that reflect the delicate balance between intermolecular interactions within a molecular film and molecule-substrate interactions. Although geometric models for explaining and predicting epitaxial configurations can be used to guide synthesis of materials, their use must recognize energetic factors and the possibility of more complex, and possibly less predictable, interface structures.

  1. Epitaxial growth of two-dimensional stanene

    NASA Astrophysics Data System (ADS)

    Zhu, Feng-Feng; Chen, Wei-Jiong; Xu, Yong; Gao, Chun-Lei; Guan, Dan-Dan; Liu, Can-Hua; Qian, Dong; Zhang, Shou-Cheng; Jia, Jin-Feng

    2015-10-01

    Following the first experimental realization of graphene, other ultrathin materials with unprecedented electronic properties have been explored, with particular attention given to the heavy group-IV elements Si, Ge and Sn. Two-dimensional buckled Si-based silicene has been recently realized by molecular beam epitaxy growth, whereas Ge-based germanene was obtained by molecular beam epitaxy and mechanical exfoliation. However, the synthesis of Sn-based stanene has proved challenging so far. Here, we report the successful fabrication of 2D stanene by molecular beam epitaxy, confirmed by atomic and electronic characterization using scanning tunnelling microscopy and angle-resolved photoemission spectroscopy, in combination with first-principles calculations. The synthesis of stanene and its derivatives will stimulate further experimental investigation of their theoretically predicted properties, such as a 2D topological insulating behaviour with a very large bandgap, and the capability to support enhanced thermoelectric performance, topological superconductivity and the near-room-temperature quantum anomalous Hall effect.

  2. Enhancing Dopant Solubility via Epitaxial Surfactant Growth

    SciTech Connect

    Zhang, L.; Yan, Y.; Wei, S.-H.

    2009-01-01

    A general concept for enhancing dopant solubility via epitaxial surfactant growth is proposed. The key of the concept is to find the appropriate surfactants that generate high (low) levels that can transfer electrons (holes) to dopant acceptor (donor) levels in p-type (n-type) doping, thus significantly lowering the formation energy of dopants. Using first-principles density-functional calculations, our concept explains excellently the recently discovered dual-surfactant effect of Sb and H on enhancing Zn doping in epitaxially grown GaP(100) thin film and suggests that sole surfactant Te can also induce enhancement of N solubility in ZnSe(100) film. We also proposed the surfactants for enhancing p-type doing of ZnO with epitaxial growth with (000{bar 1}) surface. General rules for selecting surfactants for enhancing both p-type and n-type dopings are provided.

  3. 14. View of interior, north and east walls featuring sink, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    14. View of interior, north and east walls featuring sink, facing east (Note: B/W scale on wall in foreground is in 1/2 ft increments) - Nevada Test Site, Reactor Maintenance & Disassembly Complex, Junior Hot Cell, Jackass Flats, Area 25, South of intersection of Roads F & G, Mercury, Nye County, NV

  4. Magnetic phase diagram of epitaxial dysprosium

    NASA Astrophysics Data System (ADS)

    Tsui, F.; Flynn, C. P.

    1993-08-01

    We have determined the magnetic phase diagram of Dy as a function of epitaxial strain ɛ, applied field H, and temperature T. $roman Y sub x roman Lu sub 1-x- alloys were employed as templates to clamp the films at selected strains. The separate roles of epitaxial clamping and strain are identified for the first time. There is a clearly defined transition as the strain is changed at low temperature from the clamped helical phase to the ferromagnetic phase. The transition is modeled by a linear coupling treatment of the magnetoelastic strains.

  5. Chemical vapor deposition of epitaxial silicon

    DOEpatents

    Berkman, Samuel

    1984-01-01

    A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

  6. Superconducting cuprate heterostructures for hot electron bolometers

    SciTech Connect

    Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

    2013-11-25

    Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La{sub 2−x}Sr{sub x}CuO{sub 4} layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV∼γI{sup 3}, with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ/dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area g{sub e−ph}≈1 W/K cm{sup 2} at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity.

  7. Hot cell shield plug extraction apparatus

    DOEpatents

    Knapp, Philip A.; Manhart, Larry K.

    1995-01-01

    An apparatus is provided for moving shielding plugs into and out of holes in concrete shielding walls in hot cells for handling radioactive materials without the use of external moving equipment. The apparatus provides a means whereby a shield plug is extracted from its hole and then swung approximately 90 degrees out of the way so that the hole may be accessed. The apparatus uses hinges to slide the plug in and out and to rotate it out of the way, the hinge apparatus also supporting the weight of the plug in all positions, with the load of the plug being transferred to a vertical wall by means of a bolting arrangement.

  8. Prototype solar domestic hot water systems

    NASA Technical Reports Server (NTRS)

    1978-01-01

    Construction of a double wall heat exchanger using soft copper tube coiled around a hot water storage tank was completed and preliminary tests were conducted. Solar transport water to tank potable water heat exchange tests were performed with a specially constructed test stand. Work was done to improve the component hardware and system design for the solar water heater. The installation of both a direct feed system and a double wall heat exchanger system provided experience and site data to enable informative decisions to be made as the solar market expands into areas where freeze protection is required.

  9. Epitaxial Crystal Silicon Absorber Layers and Solar Cells Grown at 1.8 Microns per Minute

    SciTech Connect

    Bobela, D. C.; Teplin, C. W.; Young, D. L.; Branz, H. M.; Stradins, P.

    2011-01-01

    We have grown device-quality epitaxial silicon thin films at growth rates up to 1.85 {micro}m/min, using hot-wire chemical vapor deposition from silane, at substrate temperatures below 750 C. At these rates, which are more than 30 times faster than those used by the amorphous and nanocrystalline Si industry, capital costs for large-scale solar cell production would be dramatically reduced, even for cell absorber layers up to 10 {micro}m thick. We achieved high growth rates by optimizing the three key parameters: silane flow, depletion, and filament geometry, based on our model developed earlier. Hydrogen coverage of the filament surface likely limits silane decomposition and growth rate at high system pressures. No considerable deterioration in PV device performance is observed when grown at high rate, provided that the epitaxial growth is initiated at low rate. A simple mesa device structure (wafer/epi Si/a-Si(i)/a-Si:H(p)/ITO) with a 2.3 {micro}m thick epitaxial silicon absorber layer was grown at 0.7 {micro}m/min. The finished device had an open-circuit voltage of 0.424 V without hydrogenation treatment.

  10. Stress-induced phase transition in ferroelectric domain walls of BaTiO3.

    PubMed

    Stepkova, V; Marton, P; Hlinka, J

    2012-05-30

    The seminal paper by Zhirnov (1958 Zh. Eksp. Teor. Fiz. 35 1175-80) explained why the structure of domain walls in ferroelectrics and ferromagnets is drastically different. Here we show that the antiparallel ferroelectric walls in rhombohedral ferroelectric BaTiO(3) can be switched between the Ising-like state (typical for ferroelectrics) and a Bloch-like state (unusual for ferroelectric walls but typical for magnetic ones). Phase-field simulations using a Ginzburg-Landau-Devonshire model suggest that this symmetry-breaking transition can be induced by a compressive epitaxial stress. The strain-tunable chiral properties of these domain walls promise a range of novel phenomena in epitaxial ferroelectric thin films.

  11. Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide.

    PubMed

    Laha, Apurba; Bugiel, E; Jestremski, M; Ranjith, R; Fissel, A; Osten, H J

    2009-11-25

    An efficient method based on molecular beam epitaxy has been developed to integrate an epitaxial Ge quantum well buried into a single crystalline rare earth oxide. The monolithic heterostructure comprised of Gd2O3-Ge-Gd2O3 grown on an Si substrate exhibits excellent crystalline quality with atomically sharp interfaces. This heterostructure with unique structural quality could be used for novel nanoelectronic applications in quantum-effect devices such as nanoscale transistors with a high mobility channel, resonant tunneling diode/transistors, etc. A phenomenological model has been proposed to explain the epitaxial growth process of the Ge layer under oxide encapsulation using a solid source molecular beam epitaxy technique. PMID:19875877

  12. Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy

    SciTech Connect

    Zheng, Qiye; Kim, Honggyu; Zhang, Runyu; Zuo, Jianmin; Braun, Paul V.; Sardela, Mauro; Balaji, Manavaimaran; Lourdudoss, Sebastian; Sun, Yan-Ting

    2015-12-14

    Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured Ga{sub x}In{sub 1−x}P (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.

  13. Effect of ferroelastic twin walls on local polarizations switching - phase field modeling

    SciTech Connect

    Jia, Quanzi; Choudhury, S; Zhang, J X; Li, Y L; Chen, Q; Kalinin, S V

    2008-01-01

    Local polarization switching in epitaxial ferroelectric thin films in the presence of ferroelastic domain walls was studied using phase-field approach. The nucleation bias profile across a twin wall was analyzed, and the localization of preferential nucleation sites was established. This analysis was further extended to a realistic domain structure with multiple twin boundaries. It was observed that the local nucleation voltage required for a 180{sup o} domain switching is closely related to the number of such local defects.

  14. Epitaxial solar-cell fabrication, phase 2

    NASA Technical Reports Server (NTRS)

    Daiello, R. V.; Robinson, P. H.; Kressel, H.

    1977-01-01

    Dichlorosilane (SiH2Cl2) was used as the silicon source material in all of the epitaxial growths. Both n/p/p(+) and p/n/n(+) structures were studied. Correlations were made between the measured profiles and the solar cell parameters, especially cell open-circuit voltage. It was found that in order to obtain consistently high open-circuit voltage, the epitaxial techniques used to grow the surface layer must be altered to obtain very abrupt doping profiles in the vicinity of the junction. With these techniques, it was possible to grow reproducibly both p/n/n(+) and n/p/p(+) solar cell structures having open-circuit voltages in the 610- to 630-mV range, with fill-factors in excess of 0.80 and AM-1 efficiencies of about 13%. Combinations and comparisons of epitaxial and diffused surface layers were also made. Using such surface layers, we found that the blue response of epitaxial cells could be improved, resulting in AM-1 short-circuit current densities of about 30 mA/cm sq. The best cells fabricated in this manner had AM-1 efficiency of 14.1%.

  15. Improved Boat For Liquid-Phase Epitaxy

    NASA Technical Reports Server (NTRS)

    Connolly, John C.

    1991-01-01

    Liquid-phase epitaxial (LPE) growth boat redesigned. Still fabricated from ultra-high-purity graphite, but modified to permit easy disassembly and cleaning, along with improved wiping action for more complete removal of melt to reduce carry-over of gallium. Larger substrates and more uniform composition obtained.

  16. Epitaxy of semiconductor-superconductor nanowires.

    PubMed

    Krogstrup, P; Ziino, N L B; Chang, W; Albrecht, S M; Madsen, M H; Johnson, E; Nygård, J; Marcus, C M; Jespersen, T S

    2015-04-01

    Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role in determining the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and the design of devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al grown with epitaxially matched single-plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires are discussed. We formulate the grain growth kinetics of the metal phase in general terms of continuum parameters and bicrystal symmetries. The method realizes the ultimate limit of uniform interfaces and seems to solve the soft-gap problem in superconducting hybrid structures. PMID:25581626

  17. Epitaxy of semiconductor-superconductor nanowires

    NASA Astrophysics Data System (ADS)

    Krogstrup, P.; Ziino, N. L. B.; Chang, W.; Albrecht, S. M.; Madsen, M. H.; Johnson, E.; Nygård, J.; Marcus, C. M.; Jespersen, T. S.

    2015-04-01

    Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role in determining the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and the design of devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al grown with epitaxially matched single-plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires are discussed. We formulate the grain growth kinetics of the metal phase in general terms of continuum parameters and bicrystal symmetries. The method realizes the ultimate limit of uniform interfaces and seems to solve the soft-gap problem in superconducting hybrid structures.

  18. Radioactive hot cell access hole decontamination machine

    DOEpatents

    Simpson, William E.

    1982-01-01

    Radioactive hot cell access hole decontamination machine. A mobile housing has an opening large enough to encircle the access hole and has a shielding door, with a door opening and closing mechanism, for uncovering and covering the opening. The housing contains a shaft which has an apparatus for rotating the shaft and a device for independently translating the shaft from the housing through the opening and access hole into the hot cell chamber. A properly sized cylindrical pig containing wire brushes and cloth or other disks, with an arrangement for releasably attaching it to the end of the shaft, circumferentially cleans the access hole wall of radioactive contamination and thereafter detaches from the shaft to fall into the hot cell chamber.

  19. Stereo-epitaxial growth of single-crystal Ni nanowires and nanoplates from aligned seed crystals.

    PubMed

    Lee, Hyoban; Yoo, Youngdong; Kang, Taejoon; Lee, Jiyoung; Kim, Eungwang; Fang, Xiaosheng; Lee, Sungyul; Kim, Bongsoo

    2016-05-21

    Epitaxially grown anisotropic Ni nanostructures are promising building blocks for the development of miniaturized and stereo-integrated data storage kits because they can store multiple magnetic domain walls (DWs). Here, we report stereo-epitaxially grown single-crystalline Ni nanowires (NWs) and nanoplates, and their magnetic properties. Vertical and inclined Ni NWs were grown at the center and edge regions of c-cut sapphire substrates, respectively. Vertical Ni nanoplates were grown on r-cut sapphire substrates. The morphology and growth direction of Ni nanostructures can be steered by seed crystals. Cubic Ni seeds grow into vertical Ni NWs, tetrahedral Ni seeds grow into inclined Ni NWs, and triangular Ni seeds grow into vertical Ni nanoplates. The shapes of the Ni seeds are determined by the interfacial energy between the bottom plane of the seeds and the substrates. The as-synthesized Ni NWs and nanoplates have blocking temperature values greater than 300 K at 500 Oe, verifying that these Ni nanostructures can form large magnetic DWs with high magnetic anisotropy properties. We anticipate that epitaxially grown Ni NWs and nanoplates will be used in various types of 3-dimensional magnetic devices. PMID:27129106

  20. Stereo-epitaxial growth of single-crystal Ni nanowires and nanoplates from aligned seed crystals.

    PubMed

    Lee, Hyoban; Yoo, Youngdong; Kang, Taejoon; Lee, Jiyoung; Kim, Eungwang; Fang, Xiaosheng; Lee, Sungyul; Kim, Bongsoo

    2016-05-21

    Epitaxially grown anisotropic Ni nanostructures are promising building blocks for the development of miniaturized and stereo-integrated data storage kits because they can store multiple magnetic domain walls (DWs). Here, we report stereo-epitaxially grown single-crystalline Ni nanowires (NWs) and nanoplates, and their magnetic properties. Vertical and inclined Ni NWs were grown at the center and edge regions of c-cut sapphire substrates, respectively. Vertical Ni nanoplates were grown on r-cut sapphire substrates. The morphology and growth direction of Ni nanostructures can be steered by seed crystals. Cubic Ni seeds grow into vertical Ni NWs, tetrahedral Ni seeds grow into inclined Ni NWs, and triangular Ni seeds grow into vertical Ni nanoplates. The shapes of the Ni seeds are determined by the interfacial energy between the bottom plane of the seeds and the substrates. The as-synthesized Ni NWs and nanoplates have blocking temperature values greater than 300 K at 500 Oe, verifying that these Ni nanostructures can form large magnetic DWs with high magnetic anisotropy properties. We anticipate that epitaxially grown Ni NWs and nanoplates will be used in various types of 3-dimensional magnetic devices.

  1. Terahertz hot electron bolometric detectors based on graphene quantum dots

    NASA Astrophysics Data System (ADS)

    El Fatimy, A.; Myers-Ward, R. L.; Boyd, A. K.; Daniels, K. M.; Gaskill, D. K.; Barbara, P.

    2015-03-01

    We study graphene quantum dots patterned from epitaxial graphene on SiC with a resistance strongly dependent on temperature. The combination of weak electron-phonon coupling and small electronic heat capacity in graphene makes these quantum dots ideal hot-electron bolometers. We measure and characterize the THz optical response of devices with different dot sizes, at operating temperatures from 2.5K to 80K. The high responsivity, the potential for operation above 80 K and the process scalability show great promise towards practical applications of graphene quantum dot THz detectors. This work was sponsored by the U.S. Office of Naval Research (Award Number N000141310865).

  2. Epitaxially-Grown GaN Junction Field Effect Transistors

    SciTech Connect

    Baca, A.G.; Chang, P.C.; Denbaars, S.P.; Lester, L.F.; Mishra, U.K.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

    1999-05-19

    Junction field effect transistors (JFET) are fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition (MOCVD). The DC and microwave characteristics of the device are presented. A junction breakdown voltage of 56 V is obtained corresponding to the theoretical limit of the breakdown field in GaN for the doping levels used. A maximum extrinsic transconductance (gm) of 48 mS/mm and a maximum source-drain current of 270 mA/mm are achieved on a 0.8 µ m gate JFET device at VGS= 1 V and VDS=15 V. The intrinsic transconductance, calculated from the measured gm and the source series resistance, is 81 mS/mm. The fT and fmax for these devices are 6 GHz and 12 GHz, respectively. These JFETs exhibit a significant current reduction after a high drain bias is applied, which is attributed to a partially depleted channel caused by trapped hot-electrons in the semi-insulating GaN buffer layer. A theoretical model describing the current collapse is described, and an estimate for the length of the trapped electron region is given.

  3. Design, fabrication and characterization of epitaxial and non-epitaxial thermophotovoltaic cells

    NASA Astrophysics Data System (ADS)

    Rahimi, Nassim

    Thermophotovoltaics (TPVs) have significant potential in efficiently converting thermal energy to electrical energy. These applications include conversion from internal combustion engines, small nuclear sources and even portable fuel-based sources. Group-III antimonide semiconductors have been identified as the material of choice for such TPV devices due to the possibility of growing materials with the bandgap energies of 0.51 eV (GaInAsSb quaternary) to 0.72 eV (GaSb binary) that are correspond to commonly available heat sources. The quaternary alloys are grown epitaxially while the binary GaSb devices can be realized through non-epitaxial techniques. In this work, we have pursued fabrication and design methods that will allow us to realize large area GaSb-based diode technology for TPV applications. TPV yield is a serious issue in such large area devices. Functional TPV cells using epitaxial GaSb, epitaxial GaInAsSb, and implanted GaSb with areas up to 1 square cm are realized. The epitaxial cells fabricated in this study allow for the engineering of the bandgap in the structure and also allows for the tailoring of the absorber in the cell to 2.4 microm which is a blackbody wavelength of interest. These cells however are not straightforward to scale in dimension due to the presence of large epitaxy related defects that end up shorting the devices. We have identified and mitigated the effect of such shunt defects that were limiting the yield of the epitaxial TPVs on GaSb. The Non-epitaxial TPV cells are realized using beryllium ion implantation into an n-type GaSb substrate. Through the use of rapid thermal annealing a pn junction is formed. The ion-implanted approach is intended to maximize shunt resistance compared to the epitaxial technique. The presentation will involve in-depth characterization and analysis of the materials from the quality of the semiconductor materials and interfaces to the ohmic contacts. Extensive analysis of the material using

  4. Wafer bonded epitaxial templates for silicon heterostructures

    NASA Technical Reports Server (NTRS)

    Atwater, Harry A., Jr. (Inventor); Zahler, James M. (Inventor); Morral, Anna Fontcubera I (Inventor)

    2008-01-01

    A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

  5. Domain epitaxy for thin film growth

    DOEpatents

    Narayan, Jagdish

    2005-10-18

    A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature T.sub.growth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature T.sub.anneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness h.sub.c. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

  6. Wafer bonded epitaxial templates for silicon heterostructures

    DOEpatents

    Atwater, Jr., Harry A.; Zahler, James M.; Morral, Anna Fontcubera I

    2008-03-11

    A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

  7. Resonant orbitals in fluorinated epitaxial graphene.

    PubMed

    Gunasinghe, R N; Samarakoon, D K; Arampath, A B; Shashikala, H B M; Vilus, J; Hall, J H; Wang, X-Q

    2014-09-21

    Fluorinated epitaxial graphene has potential applications in organic electronics. We present the calculation results by means of first-principles density-functional-theory for various fluorination patterns. Our results indicate that semi-fluorinated graphene conformations follow the same energetic order as the corresponding hydrogenated graphene counterparts. The distinctive electronic properties between semi-hydrogenated graphene and semi-fluorinated graphene are attributed to the polar covalent C-F bond in contrast to the covalent C-H bond. The partial ionic character of the C-F bond results in the hyperconjugation of C-F σ-bonds with an sp(2) network of graphene. Resonant orbitals stabilize the stirrup conformation via the gauche effect. Resonant orbitals also lead to electron doping of the sp(2) network and enhanced excitonic effect. The implications of resonant-orbital-induced doping for the electronic and magnetic properties of fluorinated epitaxial graphene are discussed.

  8. Photoluminescence studies in epitaxial CZTSe thin films

    NASA Astrophysics Data System (ADS)

    Sendler, Jan; Thevenin, Maxime; Werner, Florian; Redinger, Alex; Li, Shuyi; Hägglund, Carl; Platzer-Björkman, Charlotte; Siebentritt, Susanne

    2016-09-01

    Epitaxial Cu 2 ZnSnSe 4 (CZTSe) thin films were grown by molecular beam epitaxy on GaAs(001) using two different growth processes, one containing an in-situ annealing stage as used for solar cell absorbers and one for which this step was omitted. Photoluminescences (PL) measurements carried out on these samples show no dependence of the emission shape on the excitation intensity at different temperatures ranging from 4 K to 300 K . To describe the PL measurements, we employ a model with fluctuating band edges in which the density of states of the resulting tail states does not seem to depend on the excited charge carrier density. In this interpretation, the PL measurements show that the annealing stage removes a defect level, which is present in the samples without this annealing.

  9. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

    1995-01-01

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

  10. Ferroelastic twin structures in epitaxial WO3 thin films

    NASA Astrophysics Data System (ADS)

    Yun, Shinhee; Woo, Chang-Su; Kim, Gi-Yeop; Sharma, Pankaj; Lee, Jin Hong; Chu, Kanghyun; Song, Jong Hyun; Chung, Sung-Yoon; Seidel, Jan; Choi, Si-Young; Yang, Chan-Ho

    2015-12-01

    Tungsten trioxide is a binary oxide that has potential applications in electrochromic windows, gas sensors, photo-catalysts, and superconductivity. Here, we analyze the crystal structure of atomically flat epitaxial layers on YAlO3 single crystal substrates and perform nanoscale investigations of the ferroelastic twins revealing a hierarchical structure at multiple length scales. We have found that the finest stripe ferroelastic twin walls along pseudocubic <100> axes are associated with cooperative mosaic rotations of the monoclinic films and the larger stripe domains along pseudocubic <110> axes are created to reduce the misfit strain through a commensurate matching of an effective in-plane lattice parameter between film and substrate. The typical widths of the two fine and larger stripe domains increase with film thickness following a power law with scaling exponents of ˜0.6 and ˜0.4, respectively. We have also found that the twin structure can be readily influenced by illumination with an electron beam or a tip-based mechanical compression.

  11. Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Nakamura, Shuji; Sakai, Shiro; Chang, Shi S.; Ramaswamy, Ramu V.; Kim, Jae-Hoon; Radhakrishnan, Gouri; Liu, John K.; Katz, Joseph

    1989-01-01

    Planar oxide-maskless growth of GaAs was demonstrated by transient-mode liquid phase epitaxy (TMLPE) on GaAs-coated Si substrates that were prepared by migration-enhanced molecular beam epitaxy (MEMBE). In TMLPE, the cool substrate was brought into contact with hot melts for a short time. A GaAs layer as thick as 30 microns was grown in 10 sec. The etch pits observed in TMLPE-grown layers became longer in one direction and decreased in density with increasing the TMLPE epilayer thickness. The density of etch pits in a 20 micron-thick layer was approximately 5 x 10 the 6th/sq cm. Strong bandgap emission elliptically polarized with a major axis perpendicular to the surface was observed at about 910 nm, while deep-level emission from the TMLPE/MEMBE GaAs interface was detected at 980 nm. The photoluminescence intensity divided by the carrier concentration of the TMLPE-grown layer was about 270 times larger than that of the MEMBE-grown layer used as a substrate.

  12. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    SciTech Connect

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  13. Superconductivity in Ca-intercalated epitaxial graphene on silicon carbide

    NASA Astrophysics Data System (ADS)

    Li, Kang; Feng, Xiao; Zhang, Wenhao; Ou, Yunbo; Chen, Lianlian; He, Ke; Wang, Li-Li; Guo, Liwei; Liu, Guodong; Xue, Qi-Kun; Ma, Xucun

    2013-08-01

    We have prepared Ca-intercalated multilayer epitaxial graphene films on silicon carbide and observed superconductivity in them with both magnetic and transport measurements. Superconducting transition has been detected at temperature up to 7 K in Ca-intercalated epitaxial graphene with the thickness down to 10 layers grown on both Si-face and C-face of silicon carbide. The result demonstrates intercalated epitaxial graphene as a good platform to study graphene-based superconductivity.

  14. Growth of pseudomorphic structures through organic epitaxy

    SciTech Connect

    Kaviyil, Sreejith Embekkat; Sassella, Adele; Borghesi, Alessandro; Campione, Marcello; Su Genbo; He Youping; Chen Chenjia

    2012-12-14

    The control of molecular orientation in thin solid film phases of organic semiconductors is a basic factor for the exploitation of their physical properties for optoelectronic devices. We compare structural and optical properties of thin films of the organic semiconductor {alpha}-quarterthiophene grown by molecular beam epitaxy on different organic substrates. We show how epitactic interactions, characteristic of the surface of organic crystals, can drive the orientation of the crystalline overlayer and the selection of specific polymorphs and new pseudomorphic phases. We identify a key role in this phenomenon played by the marked groove-like corrugations present in some organic crystal surfaces. Since different polymorphs possess rather different performance in terms of, e.g., charge carrier mobility, this strategy is demonstrated to allow for the growth of oriented phases with enhanced physical properties, while keeping the substrate at room temperature. These results provide useful guidelines for the design of technological substrates for organic epitaxy and they substantiate the adoption of an organic epitaxy approach for the fabrication of optoelectronic devices based on thin films of organic semiconductors.

  15. Electron holography of devices with epitaxial layers

    SciTech Connect

    Gribelyuk, M. A. Ontalus, V.; Baumann, F. H.; Zhu, Z.; Holt, J. R.

    2014-11-07

    Applicability of electron holography to deep submicron Si devices with epitaxial layers is limited due to lack of the mean inner potential data and effects of the sample tilt. The mean inner potential V{sub 0} = 12.75 V of the intrinsic epitaxial SiGe was measured by electron holography in devices with Ge content C{sub Ge} = 18%. Nanobeam electron diffraction analysis performed on the same device structure showed that SiGe is strain-free in [220] direction. Our results showed good correlation with simulations of the mean inner potential of the strain-free SiGe using density function theory. A new method is proposed in this paper to correct electron holography data for the overlap of potentials of Si and the epitaxial layer, which is caused by the sample tilt. The method was applied to the analysis of the dopant diffusion in p-Field-effect Transistor devices with the identical gate length L = 30 nm, which had alternative SiGe geometry in the source and drain regions and was subjected to different thermal processing. Results have helped to understand electrical data acquired from the same devices in terms of dopant diffusion.

  16. Selective epitaxy using the gild process

    DOEpatents

    Weiner, Kurt H.

    1992-01-01

    The present invention comprises a method of selective epitaxy on a semiconductor substrate. The present invention provides a method of selectively forming high quality, thin GeSi layers in a silicon circuit, and a method for fabricating smaller semiconductor chips with a greater yield (more error free chips) at a lower cost. The method comprises forming an upper layer over a substrate, and depositing a reflectivity mask which is then removed over selected sections. Using a laser to melt the unmasked sections of the upper layer, the semiconductor material in the upper layer is heated and diffused into the substrate semiconductor material. By varying the amount of laser radiation, the epitaxial layer is formed to a controlled depth which may be very thin. When cooled, a single crystal epitaxial layer is formed over the patterned substrate. The present invention provides the ability to selectively grow layers of mixed semiconductors over patterned substrates such as a layer of Ge.sub.x Si.sub.1-x grown over silicon. Such a process may be used to manufacture small transistors that have a narrow base, heavy doping, and high gain. The narrowness allows a faster transistor, and the heavy doping reduces the resistance of the narrow layer. The process does not require high temperature annealing; therefore materials such as aluminum can be used. Furthermore, the process may be used to fabricate diodes that have a high reverse breakdown voltage and a low reverse leakage current.

  17. The Earth's Hot Spots.

    ERIC Educational Resources Information Center

    Vink, Gregory E.; And Others

    1985-01-01

    Hot spots are isolated areas of geologic activity where volcanic eruptions, earthquakes, and upwelling currents occur far from plate boundaries. These mantle plumes are relatively stable and crustal plates drift over them. The nature and location of hot spots (with particular attention to the Hawaiian Islands and Iceland) are discussed. (DH)

  18. Hot Spot at Yellowstone

    ERIC Educational Resources Information Center

    Dress, Abby

    2005-01-01

    Within this huge national park (over two million acres spread across Wyoming, Montana, and Idaho) are steaming geysers, hot springs, bubbling mudpots, and fumaroles, or steam vents. Drives on the main roads of Yellowstone take tourists through the major hot attractions, which also include Norris Geyser Basin, Upper and Lower Geyser Basin, West…

  19. Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO3 films.

    PubMed

    Shin, Y J; Jeon, B C; Yang, S M; Hwang, I; Cho, M R; Sando, D; Lee, S R; Yoon, J-G; Noh, T W

    2015-05-27

    Switching dynamics of ferroelectric materials are governed by the response of domain walls to applied electric field. In epitaxial ferroelectric films, thermally-activated 'creep' motion plays a significant role in domain wall dynamics, and accordingly, detailed understanding of the system's switching properties requires that this creep motion be taken into account. Despite this importance, few studies have investigated creep motion in ferroelectric films under ac-driven force. Here, we explore ac hysteretic dynamics in epitaxial BiFeO3 thin films, through ferroelectric hysteresis measurements, and stroboscopic piezoresponse force microscopy. We reveal that identically-fabricated BiFeO3 films on SrRuO3 or La0.67Sr0.33MnO3 bottom electrodes exhibit markedly different switching behaviour, with BiFeO3/SrRuO3 presenting essentially creep-free dynamics. This unprecedented result arises from the distinctive spatial inhomogeneities of the internal fields, these being influenced by the bottom electrode's surface morphology. Our findings further highlight the importance of controlling interface and defect characteristics, to engineer ferroelectric devices with optimised performance.

  20. Interplay between magnetocrystalline anisotropy and exchange bias in epitaxial CoO/Co films

    NASA Astrophysics Data System (ADS)

    Liu, Hao-Liang; Brems, Steven; Zeng, Yu-Jia; Temst, Kristiaan; Vantomme, André; Van Haesendonck, Chris

    2016-05-01

    The interplay between magnetocrystalline anisotropy and exchange bias is investigated in CoO/Co bilayer films, which are grown epitaxially on MgO (0 0 1), by magnetization reversal measurements based on the anisotropic magnetoresistance (AMR) effect. While an asymmetric magnetization reversal survives after training for cooling field (CF) along the hard axis, the magnetization reversal becomes symmetric and is dominated in both branches of the hysteresis loop by domain wall motion before and after training for CF along the easy axis. When performing an in-plane hysteresis loop perpendicular to the CF, the hysteresis loop along the easy axis becomes asymmetric: magnetization rotation dominates in the ascending branch, while there is a larger contribution of domain wall motion in the descending branch. Furthermore, the azimuthal angular dependence of the AMR shows two minima after performing a perpendicular hysteresis loop, instead of only one minimum after training. Relying on the extended Fulcomer and Charap model, these effects can be related to an increased deviation of the average uncompensated antiferromagnetic magnetization from the CF direction. This model provides a consistent interpretation of training and asymmetry of the magnetization reversal for epitaxial films with pronounced magnetocrystalline anisotropy as well as for the previously investigated polycrystalline films.

  1. Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO3 films

    PubMed Central

    Shin, Y. J.; Jeon, B. C.; Yang, S. M.; Hwang, I.; Cho, M. R.; Sando, D.; Lee, S. R.; Yoon, J.-G.; Noh, T. W.

    2015-01-01

    Switching dynamics of ferroelectric materials are governed by the response of domain walls to applied electric field. In epitaxial ferroelectric films, thermally-activated ‘creep’ motion plays a significant role in domain wall dynamics, and accordingly, detailed understanding of the system’s switching properties requires that this creep motion be taken into account. Despite this importance, few studies have investigated creep motion in ferroelectric films under ac-driven force. Here, we explore ac hysteretic dynamics in epitaxial BiFeO3 thin films, through ferroelectric hysteresis measurements, and stroboscopic piezoresponse force microscopy. We reveal that identically-fabricated BiFeO3 films on SrRuO3 or La0.67Sr0.33MnO3 bottom electrodes exhibit markedly different switching behaviour, with BiFeO3/SrRuO3 presenting essentially creep-free dynamics. This unprecedented result arises from the distinctive spatial inhomogeneities of the internal fields, these being influenced by the bottom electrode’s surface morphology. Our findings further highlight the importance of controlling interface and defect characteristics, to engineer ferroelectric devices with optimised performance. PMID:26014521

  2. 6. HOT AIR PORTION OF DAMPERS. Hot Springs National ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    6. HOT AIR PORTION OF DAMPERS. - Hot Springs National Park, Bathhouse Row, Lamar Bathhouse: Mechanical & Piping Systems, State Highway 7, 1 mile north of U.S. Highway 70, Hot Springs, Garland County, AR

  3. Rarefied gas flow behavior in micro/nanochannels under specified wall heat flux

    NASA Astrophysics Data System (ADS)

    Balaj, Mojtaba; Akhlaghi, Hassan; Roohi, Ehsan

    2015-01-01

    In this paper, we investigate the effects of convective heat transfer on the argon gas flow through micro/nanochannels subject to uniform wall heat flux (UWH) boundary condition using the direct simulation Monte Carlo (DSMC) method. Both the hot wall (qwall > 0) and the cold wall (qwall < 0) cases are considered. We consider the effect of wall heat flux on the centerline pressure, velocity profile and mass flow rate through the channel in the slip regime. The effects of rarefaction, property variations and compressibility are considered. We show that UWH boundary condition leads to the thermal transpiration. Our investigations showed that this thermal transpiration enhances the heat transfer rate at the walls in the case of hot walls and decreases it where the walls are being cooled. We also show that the deviation of the centerline pressure distribution from the linear distribution depends on the direction of the wall heat flux.

  4. Wall surveyor project report

    SciTech Connect

    Mullenhoff, D.J.; Johnston, B.C.; Azevedo, S.G.

    1996-02-22

    A report is made on the demonstration of a first-generation Wall Surveyor that is capable of surveying the interior and thickness of a stone, brick, or cement wall. LLNL`s Micropower Impulse Radar is used, based on emitting and detecting very low amplitude and short microwave impulses (MIR rangefinder). Six test walls were used. While the demonstrator MIR Wall Surveyor is not fieldable yet, it has successfully scanned the test walls and produced real-time images identifying the walls. It is planned to optimize and package the evaluation wall surveyor into a hand held unit.

  5. HOT CELL BUILDING, TRA632, INTERIOR. HOT CELL NO. 1 (THE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    HOT CELL BUILDING, TRA-632, INTERIOR. HOT CELL NO. 1 (THE FIRST BUILT) IN LABORATORY 101. CAMERA FACES SOUTHEAST. SHIELDED OPERATING WINDOWS ARE ON LEFT (NORTH) SIDE. OBSERVATION WINDOW IS AT LEFT OF VIEW (ON WEST SIDE). PLASTIC COVERS SHROUD MASTER/SLAVE MANIPULATORS AT WINDOWS IN LEFT OF VIEW. NOTE MINERAL OIL RESERVOIR ABOVE "CELL 1" SIGN, INDICATING LEVEL OF THE FLUID INSIDE THE THICK WINDOWS. HOT CELL HAS BEVELED CORNER BECAUSE A SQUARED CORNER WOULD HAVE SUPPLIED UNNECESSARY SHIELDING. NOTE PUMICE BLOCK WALL AT LEFT OF VIEW. INL NEGATIVE NO. HD46-28-1. Mike Crane, Photographer, 2/2005 - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

  6. If walls could talk

    NASA Technical Reports Server (NTRS)

    Braam, J.; McIntire, L. V. (Principal Investigator)

    1999-01-01

    The plant cell wall is very complex, both in structure and function. The wall components and the mechanical properties of the wall have been implicated in conveying information that is important for morphogenesis. Proteoglycans, fragments of polysaccharides and the structural integrity of the wall may relay signals that influence cellular differentiation and growth control. Furthering our knowledge of cell wall structure and function is likely to have a profound impact on our understanding of how plant cells communicate with the extracellular environment.

  7. A&M. Hot liquid waste treatment building (TAN616). Camera facing southwest. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. Hot liquid waste treatment building (TAN-616). Camera facing southwest. Oblique view of east and north walls. Note three corrugated pipes at lower left indicating location of underground hot waste storage tanks. Photographer: Ron Paarmann. Date: September 22, 1997. INEEL negative no. HD-20-1-4 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  8. ZnO epitaxy on (111) Si using epitaxial Lu2O3 buffer layers

    NASA Astrophysics Data System (ADS)

    Guo, W.; Allenic, A.; Chen, Y. B.; Pan, X. Q.; Tian, W.; Adamo, C.; Schlom, D. G.

    2008-02-01

    We report the growth and characterization of single-crystalline, crack-free, epitaxial (0001) ZnO films on (111) Si substrates using intervening epitaxial Lu2O3 buffer layers. The epitaxial orientation relationships are (0001)ZnO∥(111)Lu2O3∥(111)Si and [12¯10]ZnO∥[1¯10]Lu2O3∥[11¯0]Si. X-ray diffraction and transmission electron microscopy reveal that the ZnO films have high structural quality and an atomically sharp ZnO /Lu2O3 interface. Temperature-dependent photoluminescence measurements show optical properties comparable to ZnO single crystals. The films have a resistivity of 0.31Ωcm, an electron concentration of 2.5×1017cm-3, and a mobility of 80cm2/Vṡs at room temperature. The epitaxial growth of ZnO on Si represents a significant step toward the integration of ZnO-based multifunctional devices with Si electronics.

  9. Hot Accretion Disks Revisited

    NASA Astrophysics Data System (ADS)

    Bjoernsson, Gunnlaugur; Abramowicz, Marek A.; Chen, Xingming; Lasota, Jean-Pierre

    1996-08-01

    All previous studies of hot (Tp 1010-1012 K), optically thin accretion disks have neglected either the presence of e+ e- pairs or advective cooling. Thus all hot disk models constructed previously have not been self-consistent. In this paper we calculate local disk models including pair physics, relevant radiative processes in the hot plasma, and the effect of advective cooling. We use a modification of the Björnsson & Svensson mapping method. We find that the role of e+ e- pairs in the structure of hot, optically thin accretion disks is far less significant than was previously thought. The improved description of the radiation-matter interactions provided in the present paper modify the previously obtained values of the critical parameters characterizing advectively dominated flows.

  10. Saturn's Hot Plasma Explosions

    NASA Video Gallery

    This animation based on data obtained by NASA's Cassini Spacecraft shows how the "explosions" of hot plasma on the night side (orange and white) periodically inflate Saturn's magnetic field (white ...

  11. Hydrothermal epitaxy of perovskite thin films

    NASA Astrophysics Data System (ADS)

    Chien, Allen T.

    1998-12-01

    This work details the discovery and study of a new process for the growth of epitaxial single crystal thin films which we call hydrothermal epitaxy. Hydrothermal epitaxy is a low temperature solution route for producing heteroepitaxial thin films through the use of solution chemistry and structurally similar substrates. The application of this synthesis route has led to the growth of a variety of epitaxial perovskite (BaTiOsb3, SrTiOsb3, and Pb(Zr,Ti)Osb3 (PZT)) thin films which provides a simple processing pathway for the formation of other materials of technological interest. BaTiOsb3 and PZT heteroepitaxial thin films and powders were produced by the hydrothermal method at 90-200sp°C using various alkali bases. XRD and TEM analysis shows that, in each case, the films and powders form epitaxially with a composition nearly identical to that of the starting precursors. Sequential growth experiments show that film formation initiates by the nucleation of submicron faceted islands at the step edges of the SrTiOsb3 substrates followed by coalescence after longer growth periods. A Ba-rich interfacial layer between the BaTiOsb3 islands and the SrTiOsb3 surface is seen by cross-section TEM during early growth periods. Electrophoretic and Basp{2+} adsorption data provide a chemical basis for the existence of the interfacial layer. Homoepitaxial growth of SrTiOsb3 on SrTiOsb3 also occurs by island growth, suggesting that the growth mode may be a consequence of the aqueous surface chemistry inherent in the process. Film formation is shown to be affected by any number of factors including type of base, pH, temperature, and substrate pretreatments. Different cation bases (Na-, K-, Rb-, Cs-, TMA-OH) demonstrated pronounced changes in powder and film morphology. For example, smaller cation bases (e.g., NaOH, KOH and RbOH) resulted the formation of 1.5 mum \\{100\\} faceted perovskite PbTiOsb3 blocks while larger cation bases (e.g., CsOH and TMA-OH) produced 500 nm sized

  12. Hot Oiling Spreadsheet

    1993-10-22

    One of the most common oil-field treatments is hot oiling to remove paraffin from wells. Even though the practice is common, the thermal effectiveness of the process is not commonly understood. In order for producers to easily understand the thermodynamics of hot oiling, a simple tool is needed for estimating downhole temperatures. Such a tool has been developed that can be distributed as a compiled spreadsheet.

  13. Fluidized wall for protecting fusion chamber walls

    SciTech Connect

    Maniscalco, J.A.; Meier, W.R.

    1982-08-17

    Apparatus for protecting the inner wall of a fusion chamber from microexplosion debris, x-rays, neutrons, etc. Produced by deuterium-tritium (DT) targets imploded within the fusion chamber. The apparatus utilizes a fluidized wall similar to a waterfall comprising liquid lithium or solid pellets of lithiumceramic, the waterfall forming a blanket to prevent damage of the structural materials of the chamber.

  14. Geothermal hot water system

    SciTech Connect

    Dittell, E.W.

    1983-05-10

    Geothermal hot water system including a hot water tank and a warm water tank which are heated independently of each other by a close loop freon system. The closed loop freon system includes a main condenser which heats water for the warm water tank and a super-heated condenser which heats water for the hot water tank, and where the freon passes through a water evaporator which is heated by water such as from a well or other suitable source. The water evaporator in the closed loop freon system passes the water through but no environmental change to the water. An electrical circuit including aquastats in the warm water tank connected therethrough controls operation of the closed loop freon system including respective pumps on the super-heated condenser and main condenser for pumping water. Pumps pump water through the main condenser for the warm tank and through the super-heated condenser for the hot tank. The system provides for energy conservation in that the head pressure of the compressor is kept in the lower operating ranges as determined by the discharge flow of the main condenser which varies by the head pressure and temperature flow control which varies by temperature. The geothermal hot water system uses a least amount of energy in heating the water in the hot tank as well as the warm tank.

  15. Perspective: Oxide molecular-beam epitaxy rocks!

    SciTech Connect

    Schlom, Darrell G.

    2015-06-01

    Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

  16. Materials issues in molecular beam epitaxy

    SciTech Connect

    Tsao, J.Y.

    1993-12-31

    The technology of crystal growth has advanced enormously during the past two decades; among those advances, the development and refinement of molecular beam epitaxy (MBE) has been among the most important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today form the basis for many of the most advanced device structures in solid-state physics, electronics and optoelectronics. In addition to its numerous device applications, MBE is also an enormously rich and interesting area of materials science in and of itself. This paper, discusses a few examples of some of these materials issues, organized according to whether they involve bulk, thin films, or surfaces.

  17. Axions as hot and cold dark matter

    SciTech Connect

    Jeong, Kwang Sik; Kawasaki, Masahiro; Takahashi, Fuminobu E-mail: kawasaki@icrr.u-tokyo.ac.jp

    2014-02-01

    The presence of a hot dark matter component has been hinted at 3σ by a combination of the results from different cosmological observations. We examine a possibility that pseudo Nambu-Goldstone bosons account for both hot and cold dark matter components. We show that the QCD axions can do the job for the axion decay constant f{sub a}∼wall annihilation. We also investigate the cases of thermal QCD axions, pseudo Nambu-Goldstone bosons coupled to the standard model sector through the Higgs portal, and axions produced by modulus decay.

  18. Turbulent flame-wall interaction: a DNS study

    SciTech Connect

    Chen, Jackie; Hawkes, Evatt R; Sankaran, Ramanan; Gruber, Andrea

    2010-01-01

    A turbulent flame-wall interaction (FWI) configuration is studied using three-dimensional direct numerical simulation (DNS) and detailed chemical kinetics. The simulations are used to investigate the effects of the wall turbulent boundary layer (i) on the structure of a hydrogen-air premixed flame, (ii) on its near-wall propagation characteristics and (iii) on the spatial and temporal patterns of the convective wall heat flux. Results show that the local flame thickness and propagation speed vary between the core flow and the boundary layer, resulting in a regime change from flamelet near the channel centreline to a thickened flame at the wall. This finding has strong implications for the modelling of turbulent combustion using Reynolds-averaged Navier-Stokes or large-eddy simulation techniques. Moreover, the DNS results suggest that the near-wall coherent turbulent structures play an important role on the convective wall heat transfer by pushing the hot reactive zone towards the cold solid surface. At the wall, exothermic radical recombination reactions become important, and are responsible for approximately 70% of the overall heat release rate at the wall. Spectral analysis of the convective wall heat flux provides an unambiguous picture of its spatial and temporal patterns, previously unobserved, that is directly related to the spatial and temporal characteristic scalings of the coherent near-wall turbulent structures.

  19. The mechanism of sputter-induced epitaxy modification in YBCO (001) films grown on MgO (001) substrates

    SciTech Connect

    Huang, Y.; Vuchic, B.V.; Carmody, M.; Baldo, P.M.; Merkle, K.L.; Buchholz, D.B.; Mahajan, S.; Lei, J.S.; Markworth, P.R.; Chang, R.P.; Marks, L.D.

    1998-12-01

    The sputter-induced epitaxy change of in-plane orientation occurring in YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} (001) thin films grown on MgO (001) substrates by pulsed organo-metallic beam epitaxy (POMBE) is investigated by a series of film growth and characterization experiments, including RBS and TEM. The factors influencing the orientation change are systematically studied. The experimental results suggest that the substrate surface morphology change caused by the ion sputtering and the Ar ion implantation in the substrate surface layer are not the major factors that affect the orientation change. Instead, the implantation of W ions, which come from the hot filament of the ion gun, and the initial Ba deposition layer in the YBCO film growth play the most important roles in controlling the epitaxy orientation change. Microstructure studies show that a Ba{sub x}Mg{sub 1{minus}x}O buffer layer is formed on top of the sputtered substrate surface due to Ba diffusion into the W implanted layer. It is believed that the formation of this buffer layer relieves the large lattice mismatch and changes the YBCO film from the 45{degree} oriented growth to the 0{degree} oriented growth. {copyright} {ital 1998 Materials Research Society.}

  20. Epitaxial Crystal Silicon Absorber Layers and Solar Cells Grown at 1.8 Microns per Minute: Preprint

    SciTech Connect

    Bobela, D. C.; Teplin, C. W.; Young, D. L.; Branz, H. M.; Stradins, P.

    2011-07-01

    We have grown device-quality epitaxial silicon thin films at growth rates up to 1.8 μm/min, using hot-wire chemical vapor deposition from silane at substrate temperatures below 750 degrees C. At these rates, which are more than 30 times faster than those used by the amorphous and nanocrystalline Si industry, capital costs for large-scale solar cell production would be dramatically reduced, even for cell absorber layers up to 10 ?m thick. We achieved high growth rates by optimizing the three key parameters: silane flow, depletion, and filament geometry, based on our model developed earlier. Hydrogen coverage of the filament surface likely limits silane decomposition and growth rate at high system pressures. No considerable deterioration in PV device performance is observed when grown at high rate, provided that the epitaxial growth is initiated at low rate. A simple mesa device structure (wafer/epi Si/a-Si(i)/a-Si:H(p)/ITO) with a 2.3 um epitaxial silicon absorber layer was grown at 700 nm/min. The finished device had an open-circuit voltage of 0.424 V without hydrogenation treatment.

  1. Exceptional ballistic transport in epitaxial graphene nanoribbons.

    PubMed

    Baringhaus, Jens; Ruan, Ming; Edler, Frederik; Tejeda, Antonio; Sicot, Muriel; Taleb-Ibrahimi, Amina; Li, An-Ping; Jiang, Zhigang; Conrad, Edward H; Berger, Claire; Tegenkamp, Christoph; de Heer, Walt A

    2014-02-20

    Graphene nanoribbons will be essential components in future graphene nanoelectronics. However, in typical nanoribbons produced from lithographically patterned exfoliated graphene, the charge carriers travel only about ten nanometres between scattering events, resulting in minimum sheet resistances of about one kilohm per square. Here we show that 40-nanometre-wide graphene nanoribbons epitaxially grown on silicon carbide are single-channel room-temperature ballistic conductors on a length scale greater than ten micrometres, which is similar to the performance of metallic carbon nanotubes. This is equivalent to sheet resistances below 1 ohm per square, surpassing theoretical predictions for perfect graphene by at least an order of magnitude. In neutral graphene ribbons, we show that transport is dominated by two modes. One is ballistic and temperature independent; the other is thermally activated. Transport is protected from back-scattering, possibly reflecting ground-state properties of neutral graphene. At room temperature, the resistance of both modes is found to increase abruptly at a particular length--the ballistic mode at 16 micrometres and the other at 160 nanometres. Our epitaxial graphene nanoribbons will be important not only in fundamental science, but also--because they can be readily produced in thousands--in advanced nanoelectronics, which can make use of their room-temperature ballistic transport properties.

  2. The Lamportian cell wall

    SciTech Connect

    Keiliszewski, M.; Lamport, D. )

    1991-05-01

    The Lamportian Warp-Weft hypothesis suggests a cellulose-extensin interpenetrating network where extensin mechanically couples the load-bearing cellulose microfibrils in a wall matrix that is best described as a microcomposite. This model is based on data gathered from the extensin-rich walls of tomato and sycamore cell suspension culture, wherein extensin precursors are insolubilized into the wall by undefined crosslinks. The authors recent work with cell walls isolated from intact tissue as well as walls from suspension cultured cells of the graminaceous monocots maize and rice, the non-graminaceous monocot asparagus, the primitive herbaceous dicot sugar beet, and the gymnosperm Douglas Fir indicate that although extensins are ubiquitous to all plant species examined, they are not the major structural protein component of most walls examined. Amino acid analyses of intact and HF-treated walls shows a major component neither an HRGP, nor directly comparable to the glycine-rich wall proteins such as those associated with seed coat walls or the 67 mole% glycine-rich proteins cloned from petunia and soybean. Clearly, structural wall protein alternatives to extensin exist and any cell wall model must take that into account. If we assume that extracellular matrices are a priori network structures, then new Hypless' structural proteins in the maize cell wall raise questions about the sort of network these proteins create: the kinds of crosslinks involved; how they are formed; and the roles played by the small amounts of HRGPs.

  3. Halogenation of microcapsule walls

    NASA Technical Reports Server (NTRS)

    Davis, T. R.; Schaab, C. K.; Scott, J. C.

    1972-01-01

    Procedure for halogenation of confining walls of both gelatin and gelatin-phenolic resin capsules is similar to that used for microencapsulation. Ten percent halogen content renders capsule wall nonburning; any higher content enhances flame-retardant properties of selected internal phase material. Halogenation decreases permeability of wall material to encapsulated materials.

  4. Epitaxial growth of gallium arsenide from elemental arsenic

    NASA Astrophysics Data System (ADS)

    Chu, Ting L.; Chu, Shirley S.; Green, Richard F.; Cerny, C. L. A.

    1991-03-01

    Epitaxial gallium arsenide (GaAs) films of controlled electrical properties are essential for the fabrication of high performance devices. Metalorganic vapor phase epitaxy (MOVPE) utilizing the reaction of trimethylgallium (TMGa) or triethylgallium (TEGa) and arsine (AsH3) is commonly used for the epitaxial growth of GaAs. The use of highly toxic AsH3 however is a serious hazard in research and manufacturing operations. In this work the MOVPE of device quality GaAs from elemental arsenic has been demonstrated for the first time thus minimizing a major safety concern. The reaction of TEGa and As on the substrate surface at 450-550C in a H2 flow was used. The parameter of the growth process and the electrical and photoluminescent properties of epitaxial GaAs are discussed. Further TMGa TEGa and arsenic show strong absorption in far ultraviolet. The epitaxial growth of GaAs films can be achieved at low substrate temperatures by irradiating the gaseous reactant with a UV laser. Epitaxial GaAs films have been grown at 425C or higher by using ArF laser enhanced reaction of TEG and As. The electrical and photoluminescent properties of these films have also beencharacterized. Epitaxial GaAs films grown by the laser enhanced process have been found to contain considerably higher carbon concentration than films grown by the thermal process. This is due presumably to the photodissociation of carbon-hydrogen bonds in TEGa.

  5. IR Hot Wave

    SciTech Connect

    Graham, T. B.

    2010-04-01

    The IR Hot Wave{trademark} furnace is a breakthrough heat treatment system for manufacturing metal components. Near-infrared (IR) radiant energy combines with IR convective heating for heat treating. Heat treatment is an essential process in the manufacture of most components. The controlled heating and cooling of a metal or metal alloy alters its physical, mechanical, and sometimes chemical properties without changing the object's shape. The IR Hot Wave{trademark} furnace offers the simplest, quickest, most efficient, and cost-effective heat treatment option for metals and metal alloys. Compared with other heat treatment alternatives, the IR Hot Wave{trademark} system: (1) is 3 to 15 times faster; (2) is 2 to 3 times more energy efficient; (3) is 20% to 50% more cost-effective; (4) has a {+-}1 C thermal profile compared to a {+-}10 C thermal profile for conventional gas furnaces; and (5) has a 25% to 50% smaller footprint.

  6. Study of the branching domain structures in epitaxial films of yttrium iron garnet by end face magnetic force microscopy

    NASA Astrophysics Data System (ADS)

    Lisovskii, F. V.; Mansvetova, E. G.; Temiryazeva, M. P.; Temiryazev, A. G.

    2013-01-01

    The distribution of the magnetization vector on the free surface and end (cleaved facet) of thick epitaxial yttrium iron garnet films has been studied by the scanning magnetic-force microscopy method. Volume fractal-like branching of the domain structure has been found at the interface of the film and the free space with the refinement of the formed partial branches of the stripe (labyrinth) domains. Triangular closing domains have been observed at the interface between the film and the substrate. Direct experimental proof of the existence of the static horizontal Bloch lines within the stripe domain walls has been obtained.

  7. Microstructural, Magnetic Anisotropy, and Magnetic Domain Structure Correlations in Epitaxial FePd Thin Films with Perpendicular Magnetic Anisotropy

    NASA Technical Reports Server (NTRS)

    Skuza, J. R.; Clavero, C.; Yang, K.; Wincheski, B.; Lukaszew, R. A.

    2009-01-01

    L1(sub 0)-ordered FePd epitaxial thin films were prepared using dc magnetron sputter deposition on MgO (001) substrates. The films were grown with varying thickness and degree of chemical order to investigate the interplay between the microstructure, magnetic anisotropy, and magnetic domain structure. The experimentally measured domain size/period and magnetic anisotropy in this high perpendicular anisotropy system were found to be correlated following the analytical energy model proposed by Kooy and Enz that considers a delicate balance between the domain wall energy and the demagnetizing stray field energy.

  8. Fluidized wall for protecting fusion chamber walls

    DOEpatents

    Maniscalco, James A.; Meier, Wayne R.

    1982-01-01

    Apparatus for protecting the inner wall of a fusion chamber from microexplosion debris, x-rays, neutrons, etc. produced by deuterium-tritium (DT) targets imploded within the fusion chamber. The apparatus utilizes a fluidized wall similar to a waterfall comprising liquid lithium or solid pellets of lithium-ceramic, the waterfall forming a blanket to prevent damage of the structural materials of the chamber.

  9. Photo-metalorganic molecular-beam epitaxy: A new epitaxial growth technique

    SciTech Connect

    Tokumitsu, E.; Yamada, T.; Konagai, M.; Takahashi, K.

    1989-05-01

    Metalorganic molecular-beam epitaxy (MOMBE) combines many important advantages of molecular-beam epitaxy and metalorganic chemical vapor deposition. One of the most important features of MOMBE is that photochemical reaction can be used and we can call this new technique ''photo-MOMBE.'' Triisobutylaluminum (TIBA) has been used in photo-MOMBE instead of triethylaluminum (TEA) as a new aluminum source in order to enhance the photodecomposition. The optical absorption coefficient of TIBA for 193 nm was found to be three times greater than that of TEA. Selective deposition of Al, AlAs, and GaAlAs was carried out by using an ArF excimer laser. The Al mole fraction of GaAlAs ternary alloy grown with the excimer laser irradiation was greater than that of the film grown without the laser irradiation.

  10. Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy

    NASA Astrophysics Data System (ADS)

    Lai, Donny; Tan, Yew Heng; Gunawan, Oki; He, Lining; Seng Tan, Chuan

    2011-07-01

    We report an alternative approach to grow phosphorus-doped epitaxial silicon emitter by rapid thermal chemical vapor deposition at low temperature (T ≥ 700 °C). A power conversion efficiency (PCE) of (6.6 ± 0.3)% and a pseudo PCE of (10.2 ± 0.2)% has been achieved for the solar cell with epi-emitter grown at 700 °C, in the absence of surface texturization, antireflective coating, and back surface field enhancement, without considering front contact shading. Secondary ion mass spectroscopy revealed that lower temperature silicon epitaxy yields a more abrupt p-n junction, suggesting potential applications for radial p-n junction wire array solar cells.

  11. Wall of fundamental constants

    SciTech Connect

    Olive, Keith A.; Peloso, Marco; Uzan, Jean-Philippe

    2011-02-15

    We consider the signatures of a domain wall produced in the spontaneous symmetry breaking involving a dilatonlike scalar field coupled to electromagnetism. Domains on either side of the wall exhibit slight differences in their respective values of the fine-structure constant, {alpha}. If such a wall is present within our Hubble volume, absorption spectra at large redshifts may or may not provide a variation in {alpha} relative to the terrestrial value, depending on our relative position with respect to the wall. This wall could resolve the contradiction between claims of a variation of {alpha} based on Keck/Hires data and of the constancy of {alpha} based on Very Large Telescope data. We derive the properties of the wall and the parameters of the underlying microscopic model required to reproduce the possible spatial variation of {alpha}. We discuss the constraints on the existence of the low-energy domain wall and describe its observational implications concerning the variation of the fundamental constants.

  12. Point defect balance in epitaxial GaSb

    SciTech Connect

    Segercrantz, N. Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F.; Song, Y.; Wang, S.

    2014-08-25

    Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

  13. Epitaxial EuO thin films on GaAs

    SciTech Connect

    Swartz, A. G.; Ciraldo, J.; Wong, J. J. I.; Li Yan; Han Wei; Lin Tao; Shi, J.; Kawakami, R. K.; Mack, S.; Awschalom, D. D.

    2010-09-13

    We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57 deg., a significant remanent magnetization, and a Curie temperature of 69 K.

  14. Dispersants displace hot oiling

    SciTech Connect

    Wash, R.

    1984-02-01

    Laboratory experiments and field testing of dispersants in producing wells have resulted in development of 2 inexpensive paraffin dispersant packages with a broad application range, potential for significant savings over hot oiling, and that can be applied effectively by both continuous and batch treating techniques. The 2 dispersants are soluble in the carrier solvent (one soluble in oil, one in water); are able to readily disperse the wax during a hot flask test conducted in a laboratory; and leave the producing interval water wet. Field data on the 2 dispersants are tabulated, demonstrating their efficacy.

  15. Hot Oil Removes Wax

    NASA Technical Reports Server (NTRS)

    Herzstock, James J.

    1991-01-01

    Mineral oil heated to temperature of 250 degrees F (121 degrees C) found effective in removing wax from workpieces after fabrication. Depending upon size and shape of part to be cleaned of wax, part immersed in tank of hot oil, and/or interior of part flushed with hot oil. Pump, fittings, and ancillary tooling built easily for this purpose. After cleaning, innocuous oil residue washed off part by alkaline aqueous degreasing process. Serves as relatively safe alternative to carcinogenic and environmentally hazardous solvent perchloroethylene.

  16. Multifunctional epitaxial systems on silicon substrates

    NASA Astrophysics Data System (ADS)

    Singamaneni, Srinivasa Rao; Prater, John Thomas; Narayan, Jagdish

    2016-09-01

    Multifunctional heterostructures can exhibit a wide range of functional properties, including colossal magneto-resistance, magnetocaloric, and multiferroic behavior, and can display interesting physical phenomena including spin and charge ordering and strong spin-orbit coupling. However, putting this functionality to work remains a challenge. To date, most of the work reported in the literature has dealt with heterostructures deposited onto closely lattice matched insulating substrates such as DyScO3, SrTiO3 (STO), or STO buffered Si(100) using concepts of lattice matching epitaxy (LME). However, strain in heterostructures grown by LME is typically not fully relaxed and the layers contain detrimental defects such as threading dislocations that can significantly degrade the physical properties of the films and adversely affect the device characteristics. In addition, most of the substrates are incompatible with existing CMOS-based technology, where Si (100) substrates dominate. This review discusses recent advances in the integration of multifunctional oxide and non-oxide materials onto silicon substrates. An alternative thin film growth approach, called "domain matching epitaxy," is presented which identifies approaches for minimizing lattice strain and unwanted defects in large misfit systems (7%-25% and higher). This approach broadly allows for the integration of multifunctional materials onto silicon substrates, such that sensing, computation, and response functions can be combined to produce next generation "smart" devices. In general, pulsed laser deposition has been used to epitaxially grow these materials, although the concepts developed here can be extended to other deposition techniques, as well. It will be shown that TiN and yttria-stabilized zirconia template layers provide promising platforms for the integration of new functionality into silicon-based computer chips. This review paper reports on a number of thin-film heterostructure systems that span a

  17. Epitaxial integration of nanowires in microsystems by local micrometer-scale vapor-phase epitaxy.

    PubMed

    Mølhave, Kristian; Wacaser, Brent A; Petersen, Dirch Hjorth; Wagner, Jakob B; Samuelson, Lars; Bøggild, Peter

    2008-10-01

    Free-standing epitaxially grown nanowires provide a controlled growth system and an optimal interface to the underlying substrate for advanced optical, electrical, and mechanical nanowire device connections. Nanowires can be grown by vapor-phase epitaxy (VPE) methods such as chemical vapor deposition (CVD) or metal organic VPE (MOVPE). However, VPE of semiconducting nanowires is not compatible with several microfabrication processes due to the high synthesis temperatures and issues such as cross-contamination interfering with the intended microsystem or the VPE process. By selectively heating a small microfabricated heater, growth of nanowires can be achieved locally without heating the entire microsystem, thereby reducing the compatibility problems. The first demonstration of epitaxial growth of silicon nanowires by this method is presented and shows that the microsystem can be used for rapid optimization of VPE conditions. The important issue of the cross-contamination of other parts of the microsystem caused by the local growth of nanowires is also investigated by growth of GaN near previously grown silicon nanowires. The design of the cantilever heaters makes it possible to study the grown nanowires with a transmission electron microscope without sample preparation.

  18. 13. View of interior, north wall featuring fume hood, facing ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    13. View of interior, north wall featuring fume hood, facing north (Note: B/W scale on fume hood is in 1/2 ft increments) - Nevada Test Site, Reactor Maintenance & Disassembly Complex, Junior Hot Cell, Jackass Flats, Area 25, South of intersection of Roads F & G, Mercury, Nye County, NV

  19. Infrared Rugates by Molecular Beam Epitaxy

    NASA Technical Reports Server (NTRS)

    Rona, M.

    1993-01-01

    Rugates are optical structures that have a sinusoidal index of refraction (harmonic gradient-index field). As their discrete high/ low index filter counterparts, they can be used as narrow rejection band filters. However, since rugates do not have abrupt interfaces, they tend to have a smaller absorption, hence deliver a higher in band reflectivity. The absence of sharp interfaces makes rugates even more desirable for high-energy narrow band reflectors. In this application, the lack of a sharp interface at the maximum internal standing wave electric field results in higher breakdown strengths. Our method involves fabricating rugates, with molecular beam epitaxy, on GaAs wafers as an Al(x)Ga(1-x)As single-crystal film.

  20. Epitaxial oxide bilayer on Pt (001) nanofacets

    NASA Astrophysics Data System (ADS)

    Hennessy, Daniel; Komanicky, Vladimir; Iddir, Hakim; Pierce, Michael S.; Menzel, Andreas; Chang, Kee-Chul; Barbour, Andi; Zapol, Peter; You, Hoydoo

    2012-01-01

    We observed an epitaxial, air-stable, partially registered (2 × 1) oxide bilayer on Pt (001) nanofacets [V. Komanicky, A. Menzel, K.-C. Chang, and H. You, J. Phys. Chem. 109, 23543 (2005)]. The bilayer is made of two half Pt layers; the top layer has four oxygen bonds and the second layer two. The positions and oxidation states of the Pt atoms are determined by analyzing crystal truncation rods and resonance scattering data. The positions of oxygen atoms are determined by density functional theory (DFT) calculations. Partial registry on the nanofacets and the absence of such registry on the extended Pt (001) surface prepared similarly are explained in DFT calculations by strain relief that can be accommodated only by nanoscale facets.

  1. Scattering and interference in epitaxial graphene.

    PubMed

    Rutter, G M; Crain, J N; Guisinger, N P; Li, T; First, P N; Stroscio, J A

    2007-07-13

    A single sheet of carbon, graphene, exhibits unexpected electronic properties that arise from quantum state symmetries, which restrict the scattering of its charge carriers. Understanding the role of defects in the transport properties of graphene is central to realizing future electronics based on carbon. Scanning tunneling spectroscopy was used to measure quasiparticle interference patterns in epitaxial graphene grown on SiC(0001). Energy-resolved maps of the local density of states reveal modulations on two different length scales, reflecting both intravalley and intervalley scattering. Although such scattering in graphene can be suppressed because of the symmetries of the Dirac quasiparticles, we show that, when its source is atomic-scale lattice defects, wave functions of different symmetries can mix.

  2. Shaping metal nanocrystals through epitaxial seeded growth

    SciTech Connect

    Habas, Susan E.; Lee, Hyunjoo; Radmilovic, Velimir; Somorjai,Gabor A.; Yang, Peidong

    2008-02-17

    Morphological control of nanocrystals has becomeincreasingly important, as many of their physical and chemical propertiesare highly shape-dependent. Nanocrystal shape control for both single andmultiple material systems, however, remains fairly empirical andchallenging. New methods need to be explored for the rational syntheticdesign of heterostructures with controlled morphology. Overgrowth of adifferent material on well-faceted seeds, for example, allows for the useof the defined seed morphology to control nucleation and growth of thesecondary structure. Here, we have used highly faceted cubic Pt seeds todirect the epitaxial overgrowth of a secondary metal. We demonstrate thisconcept with lattice matched Pd to produce conformal shape-controlledcore-shell particles, and then extend it to lattice mismatched Au to giveanisotropic growth. Seeding with faceted nanocrystals may havesignificant potential towards the development of shape-controlledheterostructures with defined interfaces.

  3. An experimental study of near wall flow parameters in the blade end-wall corner region

    NASA Technical Reports Server (NTRS)

    Bhargava, Rakesh K.; Raj, Rishi S.

    1989-01-01

    The near wall flow parameters in the blade end-wall corner region is investigated. The blade end-wall corner region was simulated by mounting an airfoil section (NACA 65-015 base profile) symmetric blades on both sides of the flat plate with semi-circular leading edge. The initial 7 cm from the leading edge of the flat plate was roughened by gluing No. 4 floor sanding paper to artificially increase the boundary layer thickness on the flat plate. The initial flow conditions of the boundary layer upstream of the corner region are expected to dictate the behavior of flow inside the corner region. Therefore, an experimental investigation was extended to study the combined effect of initial roughness and increased level of free stream turbulence on the development of a 2-D turbulent boundary layer in the absence of the blade. The measurement techniques employed in the present investigation included, the conventional pitot and pitot-static probes, wall taps, the Preston tube, piezoresistive transducer and the normal sensor hot-wire probe. The pitot and pitot-static probes were used to obtain mean velocity profile measurements within the boundary layer. The measurements of mean surface static pressure were obtained with the surface static tube and the conventional wall tap method. The wall shear vector measurements were made with a specially constructed Preston tube. The flush mounted piezoresistive type pressure transducer were employed to measure the wall pressure fluctuation field. The velocity fluctuation measurements, used in obtaining the wall pressure-velocity correlation data, were made with normal single sensor hot-wire probe. At different streamwise stations, in the blade end-wall corner region, the mean values of surface static pressure varied more on the end-wall surface in the corner region were mainly caused by the changes in the curvature of the streamlines. The magnitude of the wall shear stress in the blade end-wall corner region increased significantly

  4. Hot-hole photodetectors

    NASA Astrophysics Data System (ADS)

    2014-05-01

    By injecting high-energy charge carriers (dubbed 'hot holes') into a semiconductor, scientists have succeeded in realizing photodetectors capable of detecting ultralong wavelengths. Unil Perera from Georgia State University in the USA explains how the devices work and how they can be improved.

  5. Hot off the Press

    ERIC Educational Resources Information Center

    Brisco, Nicole D.

    2007-01-01

    In the past, the newspaper was one of the world's most used sources of information. Recently, however, its use has declined due to the popularity of cable television and the Internet. Yet the idea of reading the morning paper with a hot cup of coffee holds many warm memories for children who watched their parents in this daily ritual. In this…

  6. Zen Hot Dog Molecules

    ERIC Educational Resources Information Center

    Ryan, Dennis

    2009-01-01

    Substituted cycloalkanes with one branch illustrating each topic in an instructional unit can serve as summaries or reviews in courses of organic chemistry. The hungry Zen master told the hot dog vendor to make him one with everything. You can do the same for your students.

  7. What's Hot? What's Not?

    ERIC Educational Resources Information Center

    Buczynski, Sandy

    2006-01-01

    When Goldilocks finds three bowls of porridge at different temperatures in the three bears' house, she accurately assesses the situation and comes up with one of the most recognizable lines in children's literature," This porridge is too hot; this porridge is too cold; aahh, this porridge is just right!" Goldilocks' famous line is a perfect…

  8. Zen Hot Dog Molecules

    NASA Astrophysics Data System (ADS)

    Ryan, Dennis

    2009-04-01

    Substituted cycloalkanes with one branch illustrating each topic in an instructional unit can serve as summaries or reviews in courses of organic chemistry. The hungry Zen master told the hot dog vendor to make him one with everything. You can do the same for your students.

  9. Horseshoe pitchers' hot hands.

    PubMed

    Smith, Gary

    2003-09-01

    Gilovich, Vallone, and Tversky's (1985) analysis of basketball data indicates that a player's chances of making a shot are not affected by the results of earlier shots. However, their basketball data do not control for several confounding influences. An analysis of horseshoe pitching, which does not have these defects, indicates that players do have modest hot and cold spells.

  10. A Generalized Wall Function

    NASA Technical Reports Server (NTRS)

    Shih, Tsan-Hsing; Povinelli, Louis A.; Liu, Nan-Suey; Potapczuk, Mark G.; Lumley, J. L.

    1999-01-01

    The asymptotic solutions, described by Tennekes and Lumley (1972), for surface flows in a channel, pipe or boundary layer at large Reynolds numbers are revisited. These solutions can be extended to more complex flows such as the flows with various pressure gradients, zero wall stress and rough surfaces, etc. In computational fluid dynamics (CFD), these solutions can be used as the boundary conditions to bridge the near-wall region of turbulent flows so that there is no need to have the fine grids near the wall unless the near-wall flow structures are required to resolve. These solutions are referred to as the wall functions. Furthermore, a generalized and unified law of the wall which is valid for whole surface layer (including viscous sublayer, buffer layer and inertial sublayer) is analytically constructed. The generalized law of the wall shows that the effect of both adverse and favorable pressure gradients on the surface flow is very significant. Such as unified wall function will be useful not only in deriving analytic expressions for surface flow properties but also bringing a great convenience for CFD methods to place accurate boundary conditions at any location away from the wall. The extended wall functions introduced in this paper can be used for complex flows with acceleration, deceleration, separation, recirculation and rough surfaces.

  11. Liquid Wall Chambers

    SciTech Connect

    Meier, W R

    2011-02-24

    The key feature of liquid wall chambers is the use of a renewable liquid layer to protect chamber structures from target emissions. Two primary options have been proposed and studied: wetted wall chambers and thick liquid wall (TLW) chambers. With wetted wall designs, a thin layer of liquid shields the structural first wall from short ranged target emissions (x-rays, ions and debris) but not neutrons. Various schemes have been proposed to establish and renew the liquid layer between shots including flow-guiding porous fabrics (e.g., Osiris, HIBALL), porous rigid structures (Prometheus) and thin film flows (KOYO). The thin liquid layer can be the tritium breeding material (e.g., flibe, PbLi, or Li) or another liquid metal such as Pb. TLWs use liquid jets injected by stationary or oscillating nozzles to form a neutronically thick layer (typically with an effective thickness of {approx}50 cm) of liquid between the target and first structural wall. In addition to absorbing short ranged emissions, the thick liquid layer degrades the neutron flux and energy reaching the first wall, typically by {approx}10 x x, so that steel walls can survive for the life of the plant ({approx}30-60 yrs). The thick liquid serves as the primary coolant and tritium breeding material (most recent designs use flibe, but the earliest concepts used Li). In essence, the TLW places the fusion blanket inside the first wall instead of behind the first wall.

  12. Polar domain walls trigger magnetoelectric coupling

    PubMed Central

    Fontcuberta, Josep; Skumryev, Vassil; Laukhin, Vladimir; Granados, Xavier; Salje, Ekhard K. H.

    2015-01-01

    Interface physics in oxides heterostructures is pivotal in material’s science. Domain walls (DWs) in ferroic systems are examples of naturally occurring interfaces, where order parameter of neighboring domains is modified and emerging properties may develop. Here we show that electric tuning of ferroelastic domain walls in SrTiO3 leads to dramatic changes of the magnetic domain structure of a neighboring magnetic layer (La1/2Sr1/2MnO3) epitaxially clamped on a SrTiO3 substrate. We show that the properties of the magnetic layer are intimately connected to the existence of polar regions at twin boundaries of SrTiO3, developing at , that can be electrically modulated. These findings illustrate that by exploiting the responsiveness of DWs nanoregions to external stimuli, even in absence of any domain contribution, prominent and adjustable macroscopic reactions of neighboring layers can be obtained. We conclude that polar DWs, known to exist in other materials, can be used to trigger tunable responses and may lead to new ways for the manipulation of interfacial emerging properties. PMID:26387597

  13. Epitaxial growth of Si deposited on (100) Si

    NASA Astrophysics Data System (ADS)

    Hung, L. S.; Lau, S. S.; von Allmen, M.; Mayer, J. W.; Ullrich, B. M.; Baker, J. E.; Williams, P.; Tseng, W. F.

    1980-11-01

    Epitaxial growth of deposited amorphous Si on chemically cleaned (100) Si has been found and layer-by-layer growth occurred at rates comparable to those in self-ion-implanted-amorphous Si. There is no evidence for appreciable oxygen penetration into the deposited layer during storage in air. The critical factors in achieving epitaxial growth are fast (˜50 Å/sec) deposition of Si onto a surface cleaned with a HF dip as a last rinse before loading into the vacuum system. Channeling and transmission electron microscopy measurements indicated that the epitaxial layers are essentially defect free. Secondary-ion mass spectroscopic analysis showed about 1014 oxygen/cm2 at the amorphous/crystal interface. With either higher interfacial oxygen coverage or slow (˜2 Å/sec) deposition, epitaxial growth rates are significantly slower.

  14. Epitaxy of GaN Nanowires on Graphene.

    PubMed

    Kumaresan, Vishnuvarthan; Largeau, Ludovic; Madouri, Ali; Glas, Frank; Zhang, Hezhi; Oehler, Fabrice; Cavanna, Antonella; Babichev, Andrey; Travers, Laurent; Gogneau, Noelle; Tchernycheva, Maria; Harmand, Jean-Christophe

    2016-08-10

    Epitaxial growth of GaN nanowires on graphene is demonstrated using molecular beam epitaxy without any catalyst or intermediate layer. Growth is highly selective with respect to silica on which the graphene flakes, grown by chemical vapor deposition, are transferred. The nanowires grow vertically along their c-axis and we observe a unique epitaxial relationship with the ⟨21̅1̅0⟩ directions of the wurtzite GaN lattice parallel to the directions of the carbon zigzag chains. Remarkably, the nanowire density and height decrease with increasing number of graphene layers underneath. We attribute this effect to strain and we propose a model for the nanowire density variation. The GaN nanowires are defect-free and they present good optical properties. This demonstrates that graphene layers transferred on amorphous carrier substrates is a promising alternative to bulk crystalline substrates for the epitaxial growth of high quality GaN nanostructures.

  15. Epitaxy of GaN Nanowires on Graphene.

    PubMed

    Kumaresan, Vishnuvarthan; Largeau, Ludovic; Madouri, Ali; Glas, Frank; Zhang, Hezhi; Oehler, Fabrice; Cavanna, Antonella; Babichev, Andrey; Travers, Laurent; Gogneau, Noelle; Tchernycheva, Maria; Harmand, Jean-Christophe

    2016-08-10

    Epitaxial growth of GaN nanowires on graphene is demonstrated using molecular beam epitaxy without any catalyst or intermediate layer. Growth is highly selective with respect to silica on which the graphene flakes, grown by chemical vapor deposition, are transferred. The nanowires grow vertically along their c-axis and we observe a unique epitaxial relationship with the ⟨21̅1̅0⟩ directions of the wurtzite GaN lattice parallel to the directions of the carbon zigzag chains. Remarkably, the nanowire density and height decrease with increasing number of graphene layers underneath. We attribute this effect to strain and we propose a model for the nanowire density variation. The GaN nanowires are defect-free and they present good optical properties. This demonstrates that graphene layers transferred on amorphous carrier substrates is a promising alternative to bulk crystalline substrates for the epitaxial growth of high quality GaN nanostructures. PMID:27414518

  16. Formation Of Ohmic Gold Contacts On Epitaxial GaAs

    NASA Technical Reports Server (NTRS)

    Hecht, Michael H.; Bell, L. Doug; Kaiser, William J.

    1991-01-01

    New low-temperature procedure used to deposit ohmic gold contacts on gallium arsenide epitaxial films, forming ohmic electrical contacts. Keeping wafer in vacuum until metallization prevents formation of rectifying contacts.

  17. Epitaxial CoSi2 on MOS devices

    DOEpatents

    Lim, Chong Wee; Shin, Chan Soo; Petrov, Ivan Georgiev; Greene, Joseph E.

    2005-01-25

    An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.

  18. Improved process for epitaxial deposition of silicon on prediffused substrates

    NASA Technical Reports Server (NTRS)

    Clarke, M. G.; Halsor, J. L.; Word, J. C.

    1968-01-01

    Process for fabricating integrated circuits uniformly deposits silicon epitaxially on prediffused substrates without affecting the sublayer diffusion pattern. Two silicon deposits from different sources, and deposited at different temperatures, protect the sublayer pattern from the silicon tetrachloride reaction.

  19. Growth of epitaxial thin films by pulsed laser ablation

    SciTech Connect

    Lowndes, D.H.

    1992-01-01

    High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs. (DLC)

  20. Growth of epitaxial thin films by pulsed laser ablation

    SciTech Connect

    Lowndes, D.H.

    1992-10-01

    High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs. (DLC)

  1. Cell wall integrity

    PubMed Central

    Pogorelko, Gennady; Lionetti, Vincenzo; Bellincampi, Daniela; Zabotina, Olga

    2013-01-01

    The plant cell wall, a dynamic network of polysaccharides and glycoproteins of significant compositional and structural complexity, functions in plant growth, development and stress responses. In recent years, the existence of plant cell wall integrity (CWI) maintenance mechanisms has been demonstrated, but little is known about the signaling pathways involved, or their components. Examination of key mutants has shed light on the relationships between cell wall remodeling and plant cell responses, indicating a central role for the regulatory network that monitors and controls cell wall performance and integrity. In this review, we present a short overview of cell wall composition and discuss post-synthetic cell wall modification as a valuable approach for studying CWI perception and signaling pathways. PMID:23857352

  2. Hot Tub Rash (Pseudomonas Folliculitis)

    MedlinePlus

    ... rash and rashes clinical tools newsletter | contact Share | Hot Tub Rash ( Pseudomonas Folliculitis) Information for adults A ... the skin and small pus-filled lesions. Overview Hot tub rash ( Pseudomonas folliculitis) is an infection of ...

  3. Metallic Wall Hall Thrusters

    NASA Technical Reports Server (NTRS)

    Goebel, Dan Michael (Inventor); Hofer, Richard Robert (Inventor); Mikellides, Ioannis G. (Inventor)

    2016-01-01

    A Hall thruster apparatus having walls constructed from a conductive material, such as graphite, and having magnetic shielding of the walls from the ionized plasma has been demonstrated to operate with nearly the same efficiency as a conventional non-magnetically shielded design using insulators as wall components. The new design is believed to provide the potential of higher power and uniform operation over the operating life of a thruster device.

  4. Heteroepitaxial oxide structures grown by pulsed organometallic beam epitaxy (POMBE)

    NASA Astrophysics Data System (ADS)

    Kaatz, F. H.; Dai, J.-Y.; Markworth, P. R.; Buchholz, D. B.; Chang, R. P. H.

    2003-01-01

    We describe the design, construction, and use of pulsed organometallic beam epitaxy (POMBE), a plasma-enhanced CVD technique to grow oxide heterostructures. Solid-state precursors are sampled in the gas line via quartz crystal monitors and injected into the O 2 microwave plasma with pulse time durations of a few seconds. The precursors are injected through pneumatic valves in a heated valve box. The valves and microwave power are under computer control. The microwave plasma is ramped between a forward power of 600 and 1500 W to improve film epitaxy. We use POMBE to grow epitaxial BaYZrO 3/MgO, Y-ZrO 2/LAO, and YBa 2Cu 3O 7/Y-ZrO 2/LAO structures. The processing parameters leading to the heteroepitaxy are described. The best epitaxy results in X-ray FWHM of 0.12°, 0.38°, and 0.87° for BaYZrO 3, Y-ZrO 2, and YBa 2Cu 3O 7, respectively. We show the advantages of the POMBE technique over that of plasma-enhanced CVD. Selected TEM results of the heteroepitaxial oxide structures are shown, and the role that temperature plays in the oxide epitaxy. The epitaxy of BaYZrO 3 is the first described in the literature, and that of YSZ is among the best reported.

  5. Thermal performance of steel-framed walls. Final report

    SciTech Connect

    Barbour, E.; Goodrow, J.; Kosny, J.; Christian, J.E.

    1994-11-21

    In wall construction, highly conductive members spaced along the wall, which allow higher heat transfer than that through less conductive areas, are referred to as thermal bridges. Thermal bridges in walls tend to increase heat loss and, under certain adverse conditions, can cause dust streaking (``ghosting``) on interior walls over studs due to temperature differentials, as well as condensation in and on walls. Although such adverse conditions can be easily avoided by proper thermal design of wall systems, these effects have not been well understood and thermal data has been lacking. Therefore, the present study was initiated to provide (1) a better understanding of the thermal behavior of steel-framed walls, (2) a set of R-values for typical wall constructions, and (3) information that could be used to develop improved methods of predicting R-values. An improved method for estimating R-value would allow an equitable comparison of thermal performance with other construction types and materials. This would increase the number of alternative materials for walls available to designers, thus allowing them to choose the optimum choice for construction. Twenty-three wall samples were tested in a calibrated hot box (ASTM C9761) to measure the thermal performance of steel-framed wall systems. The tests included an array of stud frame configurations, exterior sheathing and fiberglass batt insulations. Other studies have not included the use of insulating sheathing, which reduces the extent of the thermal bridges and improves total thermal performance. The purpose of the project was to provide measured R-values for commonly used steel-framed wall configurations and to improve R-value estimating methods. Test results were compared to R-value estimates using the parallel path method, the isothermal planes method and the ASHRAE Zone method. The comparison showed that the known procedures do not fully account for the three-dimensional effects created by steel framing in a wall.

  6. Selective epitaxial growth techniques to integrate high-quality germanium on silicon

    NASA Astrophysics Data System (ADS)

    Leonhardt, Darin

    2011-12-01

    High-quality Ge-on-Si heterostructures have been actively pursued for many advanced applications, including near-infrared photodetectors, high-mobility field effect transistors, and virtual substrates for integrating III-V multijunction solar cells. However, growing epitaxial Ge on Si poses many engineering challenges, ranging from lattice mismatch, to thermal expansion coefficient mismatch, to non-planar morphological evolution. The lattice mismatch between Ge and Si often leads to a high density of threading dislocations. These dislocations, if not reduced, propagate through the subsequently grown GaAs layer, deteriorating its quality. To overcome these engineering challenges, we have developed three different approaches based on molecular beam epitaxy to significantly reduce, manage, or eliminate the defects in Ge films grown on Si. The first approach involves the nucleation of Ge islands within nanoscale windows in a thin layer of chemically grown SiO2 and successive island coalescence over the SiO2 to form a continuous film. Nanoscale contact areas between Ge and Si effectively relieve the lattice mismatch stress between Ge/Si so that dislocations do not nucleate. We observe that annealing the nucleated islands prior to full coalescence also leads to Ge films that are free of defects, along with significant improvement in GaAs integrated on Ge. The second approach involves trapping dislocations in Ge between high aspect ratio walls of SiO2. Defects form during coalescence of Ge from adjacent channels and at the corners of the SiO2 walls due to stress resulting from differences in thermal expansion coefficients of Ge, Si, and SiO2. The third approach involves filling etch pits, which reveal dislocations, with SiO2 and subsequent Ge growth over SiO2. The filling prevents dislocations in the lower Ge layer from propagating into the upper Ge layer. The third method reduces the defect density from 2.8 x 108 cm-2 to 9.1 x 10 6 cm-2, and is proven to be the most

  7. Hot Billet Surface Qualifier

    SciTech Connect

    Tzyy-Shuh Chang

    2007-04-30

    OG Technologies, Inc. (OGT), developed a prototype of a Hot Billet Surface Qualifier (“Qualifier”) based on OGT’s patented HotEye™ technology and other proprietary imaging and computing technologies. The Qualifier demonstrated its ability of imaging the cast billets in line with high definition pictures, pictures capable of supporting the detection of surface anomalies on the billets. The detection will add the ability to simplify the subsequent process and to correct the surface quality issues in a much more timely and efficient manner. This is challenging due to the continuous casting environment, in which corrosive water, temperature, vibration, humidity, EMI and other unbearable factors exist. Each installation has the potential of 249,000 MMBTU in energy savings per year. This represents a cost reduction, reduced emissions, reduced water usage and reduced mill scale.

  8. Hot Spring Metagenomics

    PubMed Central

    López-López, Olalla; Cerdán, María Esperanza; González-Siso, María Isabel

    2013-01-01

    Hot springs have been investigated since the XIX century, but isolation and examination of their thermophilic microbial inhabitants did not start until the 1950s. Many thermophilic microorganisms and their viruses have since been discovered, although the real complexity of thermal communities was envisaged when research based on PCR amplification of the 16S rRNA genes arose. Thereafter, the possibility of cloning and sequencing the total environmental DNA, defined as metagenome, and the study of the genes rescued in the metagenomic libraries and assemblies made it possible to gain a more comprehensive understanding of microbial communities—their diversity, structure, the interactions existing between their components, and the factors shaping the nature of these communities. In the last decade, hot springs have been a source of thermophilic enzymes of industrial interest, encouraging further study of the poorly understood diversity of microbial life in these habitats. PMID:25369743

  9. Hot spring metagenomics.

    PubMed

    López-López, Olalla; Cerdán, María Esperanza; González-Siso, María Isabel

    2013-01-01

    Hot springs have been investigated since the XIX century, but isolation and examination of their thermophilic microbial inhabitants did not start until the 1950s. Many thermophilic microorganisms and their viruses have since been discovered, although the real complexity of thermal communities was envisaged when research based on PCR amplification of the 16S rRNA genes arose. Thereafter, the possibility of cloning and sequencing the total environmental DNA, defined as metagenome, and the study of the genes rescued in the metagenomic libraries and assemblies made it possible to gain a more comprehensive understanding of microbial communities-their diversity, structure, the interactions existing between their components, and the factors shaping the nature of these communities. In the last decade, hot springs have been a source of thermophilic enzymes of industrial interest, encouraging further study of the poorly understood diversity of microbial life in these habitats. PMID:25369743

  10. Hot chocolate effect

    SciTech Connect

    Crawford, F.S.

    1982-05-01

    The ''hot chocolate effect'' was investigated quantitatively, using water. If a tall glass cylinder is filled nearly completely with water and tapped on the bottom with a softened mallet one can detect the lowest longitudinal mode of the water column, for which the height of the water column is one-quarter wavelength. If the cylinder is rapidly filled with hot tap water containing dissolved air the pitch of that mode may descend by nearly three octaves during the first few seconds as the air comes out of solution and forms bubbles. Then the pitch gradually rises as the bubbles float to the top. A simple theoretical expression for the pitch ratio is derived and compared with experiment. The agreement is good to within the 10% accuracy of the experiments.

  11. The hot chocolate effect

    SciTech Connect

    Crawford, Frank S.

    1982-05-01

    The "hot chocolate effect" was investigated quantitatively, using water. If a tall glass cylinder is filled nearly completely with water and tapped on the bottom with a softened mallet one can detect the lowest longitudinal mode of the water column, for which the height of the water column is one quarter wavelength. If the cylinder is rapidly filled with hot tap water containing dissolved air the pitch of that mode may descend by nearly three octaves during the first few seconds as the air comes out of solution and forms bubbles. Then the pitch gradually rises as the bubbles float to the top. A simple theoretical expression for the pitch ratio is derived and compared with experiment. The agreement is good to within the ten percent accuracy of the experiments.

  12. The ''hot'' patella

    SciTech Connect

    Kipper, M.S.; Alazraki, N.P.; Feiglin, D.H.

    1982-01-01

    Increased patellar uptake on bone scans is seen quite commonly but the possible or probable etiologies of this finding have not been previously well described. A review of 100 consecutive bone scans showed that the incidence of bilateral ''hot'' patellae is 15%. Identified etiologies include osteoarthritic degenerative disease (35%), fracture, possible metastatic disease, bursitis, Paget's disease, and osteomyelitis. The value of careful history, physical examination, and radiographs is stressed.

  13. Jupiter's Hot, Mushy Moon

    NASA Technical Reports Server (NTRS)

    Taylor, G. Jeffrey

    2003-01-01

    Jupiter's moon Io is the most volcanically active body in the Solar System. Observations by instruments on the Galileo spacecraft and on telescopes atop Mauna Kea in Hawai'i indicate that lava flows on Io are surprisingly hot, over 1200 oC and possibly as much as 1300 oC; a few areas might have lava flows as hot as 1500 oC. Such high temperatures imply that the lava flows are composed of rock that formed by a very large amount of melting of Io's mantle. This has led Laszlo Keszthelyi and Alfred S. McEwen of the University of Arizona and me to reawaken an old hypothesis that suggests that the interior of Io is a partially-molten mush of crystals and magma. The idea, which had fallen out of favor for a decade or two, explains high-temperature hot spots, mountains, calderas, and volcanic plains on Io. If correct, Io gives us an opportunity to study processes that operate in huge, global magma systems, which scientists believe were important during the early history of the Moon and Earth, and possibly other planetary bodies as well. Though far from proven, the idea that Io has a ocean of mushy magma beneath its crust can be tested with measurements by future spacecraft.

  14. The Controller Synthesis of Metastable Oxides Utilizing Epitaxy and Epitaxial Stabilization

    SciTech Connect

    Schlom, Darrell

    2003-12-02

    Molecular beam epitaxy (MBE) has achieved unparalleled control in the integration of semiconductors at the nanometer. These advances were made through the use of epitaxy, epitaxial stabilization, and a combination of composition-control techniques including adsorption-controlled growth and RHEED-based composition control that we have developed, understood, and utilized for the growth of oxides. Also key was extensive characterization (utilizing RHEED, four-circle x-ray diffraction, AFM, TEM, and electrical characterization techniques) in order to study growth modes, optimize growth conditions, and probe the structural, dielectric, and ferroelectric properties of the materials grown. The materials that we have successfully engineered include titanates (PbTiO3, Bi4Ti3O12), tantalates (SrBi2Ta2O9), and niobates (SrBi2Nb2O9); layered combinations of these perovskite-related materials (Bi4Ti3O12-SrTiO3 and Bi4Ti3O12-PbTiO3 Aurivillius phases and metastable PbTiO3/SrTiO3 and BaTiO3/SrTiO3 superlattices), and new metastable phases (Srn+1TinO3n+1 Ruddlesden-Popper phases). The films were grown by reactive MBE and pulsed laser deposition (PLD). Many of these materials are either new or have been synthesized with the highest perfection ever reported. The controlled synthesis of such layered oxide heterostructures offers great potential for tailoring the superconducting, ferroelectric, and dielectric properties of these materials. These properties are important for energy technologies.

  15. 'Stucco' Walls-2

    NASA Technical Reports Server (NTRS)

    2004-01-01

    This image, taken by the microscopic imager, an instrument located on the Mars Exploration Rover Opportunity 's instrument deployment device, or 'arm,' shows the partial 'clodding' or cementation of the sand-sized grains within the trench wall. The area in this image measures approximately 3 centimeters (1.2 inches) across and makes up half of the projected 'Stucco Walls' image.

  16. Thin Wall Iron Castings

    SciTech Connect

    J.F. Cuttino; D.M. Stefanescu; T.S. Piwonka

    2001-10-31

    Results of an investigation made to develop methods of making iron castings having wall thicknesses as small as 2.5 mm in green sand molds are presented. It was found that thin wall ductile and compacted graphite iron castings can be made and have properties consistent with heavier castings. Green sand molding variables that affect casting dimensions were also identified.

  17. Domain wall filters

    SciTech Connect

    Baer, Oliver; Narayanan, Rajamani; Neuberger, Herbert; Witzel, Oliver

    2007-03-15

    We propose using the extra dimension separating the domain walls carrying lattice quarks of opposite handedness to gradually filter out the ultraviolet fluctuations of the gauge fields that are felt by the fermionic excitations living in the bulk. This generalization of the homogeneous domain wall construction has some theoretical features that seem nontrivial.

  18. Interactive Word Walls

    ERIC Educational Resources Information Center

    Jackson, Julie; Narvaez, Rose

    2013-01-01

    It is common to see word walls displaying the vocabulary that students have learned in class. Word walls serve as visual scaffolds and are a classroom strategy used to reinforce reading and language arts instruction. Research shows a strong relationship between student word knowledge and academic achievement (Stahl and Fairbanks 1986). As a…

  19. STIS CCD Hot Pixel Annealing

    NASA Astrophysics Data System (ADS)

    Hernandez, Svea

    2013-10-01

    This purpose of this activity is to repair radiation induced hot pixel damage to theSTIS CCD by warming the CCD to the ambient instrument temperature and annealing radiation damaged pixels. Radiation damage creates hot pixels in the STIS CCD Detector. Many of these hot pixels can be repaired by warming the CCD from its normal operating temperature near-83 C to the ambient instrument temperature { +5 C} for several hours. The number of hot pixels repaired is a function of annealing temperature. The effectiveness of the CCD hot pixel annealing process is assessed by measuring the dark current behavior before and after annealing and by searching for any window contamination effects.

  20. Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy

    SciTech Connect

    Zhang, Zhi; Xu, Hong-Yi; Guo, Ya-Nan; Liao, Zhi-Ming; Lu, Zhen-Yu; Chen, Ping-Ping; Shi, Sui-Xing; Lu, Wei; Zou, Jin

    2013-08-12

    In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.

  1. Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Zhang, Zhi; Lu, Zhen-Yu; Chen, Ping-Ping; Xu, Hong-Yi; Guo, Ya-Nan; Liao, Zhi-Ming; Shi, Sui-Xing; Lu, Wei; Zou, Jin

    2013-08-01

    In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.

  2. Advances in Hot-Structure Development

    NASA Technical Reports Server (NTRS)

    Rivers, H. Kevin; Glass, David E.

    2006-01-01

    The National Aeronautics and Space Administration has actively participated in the development of hot structures technology for application to hypersonic flight systems. Hot structures have been developed for vehicles including the X-43A, X-37, and the Space Shuttle. These trans-atmospheric and atmospheric entry flight systems that incorporate hot-structures technology are lighter weight and require less maintenance than those that incorporate parasitic, thermal-protection materials that attach to warm or cool substructure. The development of hot structures requires a thorough understanding of material performance in an extreme environment, boundary conditions and load interactions, structural joint performance, and thermal and mechanical performance of integrated structural systems that operate at temperatures ranging from 1500 C to 3000 C, depending on the application. This paper will present recent advances in the development of hot structures, including development of environmentally durable, high temperature leading edges and control surfaces, integrated thermal protection systems, and repair technologies. The X-43A Mach-10 vehicle utilized carbon/carbon (C/C) leading edges on the nose, horizontal control surface, and vertical tail. The nose and vertical and horizontal tail leading edges were fabricated out of a 3:1 biased, high thermal conductivity C/C. The leading edges were coated with a three-layer coating comprised of a SiC conversion of the C/C, followed by a CVD layer of SiC, followed by a thin CVD layer of HfC. Work has also been performed on the development of an integrated structure and was focused on both hot and warm (insulated) structures and integrated fuselage/tank/TPS systems. The objective was to develop integrated multifunctional airframe structures that eliminate fragile external thermal-protection systems and incorporate the insulating function within the structure. The approach taken to achieve this goal was to develop candidate hypersonic

  3. PREFACE: Hot Quarks 2004

    NASA Astrophysics Data System (ADS)

    Antinori, Federico; Bass, Steffen A.; Bellwied, Rene; Ullrich, Thomas; Velkovska, Julia; Wiedemann, Urs

    2005-04-01

    Why another conference devoted to ultra-relativistic heavy-ion physics? As we looked around the landscape of the existing international conferences and workshops, we realized that there was not a single one tailored to the people who are most directly involved with the actual research work: students, post-docs, and junior faculty/research scientists. Of course there are schools, but that was not what we had in mind. We wanted a meeting where young researchers could come together to discuss in depth the physics that they are working on without any hindrance. The major conferences have very limited time for discussions which is often shared amongst the most established. This leaves little room for young people to ask their questions and to get the detailed feedback which they deserve and which satisfies their curiosity. A discussion-driven workshop, centering on those without whom there will be no future—that seemed like what was needed. And thus the Hot Quarks workshop was born. The aim of Hot Quarks was to enhance the direct exchange of scientific information among the younger members of the community, from both experiment and theory. Participation was by invitation only in order to emphasize the contributions from junior researchers. This approach makes the workshop unique among the many forums in the field. For young scientists it represented an opportunity for exposure that they would not have had in one of the major conferences. The hope is that this meeting has helped to stimulate the next generation of scientists in our field and, at the same time, strengthened their sense of community. It all came together from 18 24 July 2004, when the 77 participants met at The Inn at Snakedance in the Taos Ski Valley, New Mexico, USA, for the first Hot Quarks workshop. Photograph Participants gather in the sunshine at the foot of the Taos Ski Valley chairlift. By all accounts, Hot Quarks 2004 was a great success. Every participant had the opportunity to present her or

  4. Epitaxial Growth of Two-Dimensional Stanene

    NASA Astrophysics Data System (ADS)

    Jia, Jinfeng

    Ultrathin semiconductors present various novel electronic properties. The first experimental realized two-dimensional (2D) material is graphene. Searching 2D materials with heavy elements bring the attention to Si, Ge and Sn. 2D buckled Si-based silicene was realized by molecular beam epitaxy (MBE) growth. Ge-based germanene was realized by mechanical exfoliation. Sn-based stanene has its unique properties. Stanene and its derivatives can be 2D topological insulators (TI) with a very large band gap as proposed by first-principles calculations, or can support enhanced thermoelectric performance, topological superconductivity and the near-room-temperature quantum anomalous Hall (QAH) effect. For the first time, in this work, we report a successful fabrication of 2D stanene by MBE. The atomic and electronic structures were determined by scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) in combination with first-principles calculations. This work will stimulate the experimental study and exploring the future application of stanene. In cooperation with Fengfeng Zhu, Wei-jiong Chen, Yong Xu, Chun-lei Gao, Dan-dan Guan, Canhua Liu, Dong Qian, Shou-Cheng Zhang.

  5. Asymmetric shape transitions of epitaxial quantum dots

    NASA Astrophysics Data System (ADS)

    Wei, Chaozhen; Spencer, Brian J.

    2016-06-01

    We construct a two-dimensional continuum model to describe the energetics of shape transitions in fully faceted epitaxial quantum dots (strained islands) via minimization of elastic energy and surface energy at fixed volume. The elastic energy of the island is based on a third-order approximation, enabling us to consider shape transitions between pyramids, domes, multifaceted domes and asymmetric intermediate states. The energetics of the shape transitions are determined by numerically calculating the facet lengths that minimize the energy of a given island type of prescribed island volume. By comparing the energy of different island types with the same volume and analysing the energy surface as a function of the island shape parameters, we determine the bifurcation diagram of equilibrium solutions and their stability, as well as the lowest barrier transition pathway for the island shape as a function of increasing volume. The main result is that the shape transition from pyramid to dome to multifaceted dome occurs through sequential nucleation of facets and involves asymmetric metastable transition shapes. We also explicitly determine the effect of corner energy (facet edge energy) on shape transitions and interpret the results in terms of the relative stability of asymmetric island shapes as observed in experiment.

  6. Epitaxial Overgrowth of Platinum on Palladium Nanocrystals

    SciTech Connect

    Jiang, M.; Zhu, Y.; Lim, B.; Tao, J.; Camargo, P.H.C.; Ma, C.; Xia, Y.

    2010-11-01

    This paper describes a systematic study on the epitaxial overgrowth of Pt on well-defined Pdnanocrystals with different shapes (and exposed facets), including regular octahedrons, truncated octahedrons, and cubes. Two different reducing agents, i.e., citric acid and L-ascorbic acid, were evaluated and compared for the reduction of K{sub 2}PtCl{sub 4} in an aqueous solution in the presence of Pdnanocrystal seeds. When citric acid was used as a reducing agent, conformal overgrowth of octahedral Pt shells on regular and truncated octahedrons of Pd led to the formation of Pd-Pt core-shell octahedrons, while non-conformal overgrowth of Pt on cubic Pd seeds resulted in the formation of an incomplete octahedral Pt shell. On the contrary, localized overgrowth of Pt branches was observed when L-ascorbic acid was used as a reducing agent regardless of the facets expressed on the surface of Pdnanocrystal seeds. This work shows that both the binding affinity of a reducing agent to the Pt surface and the reduction kinetics for a Pt precursor play important roles in determining the mode of Pt overgrowth on Pdnanocrystal surface.

  7. Formation and ordering of epitaxial quantum dots

    NASA Astrophysics Data System (ADS)

    Atkinson, Paola; Schmidt, Oliver G.; Bremner, Stephen P.; Ritchie, David A.

    2008-10-01

    Single quantum dots (QDs) have great potential as building blocks for quantum information processing devices. However, one of the major difficulties in the fabrication of such devices is the placement of a single dot at a pre-determined position in the device structure, for example, in the centre of a photonic cavity. In this article we review some recent investigations in the site-controlled growth of InAs QDs on GaAs by molecular beam epitaxy. The method we use is ex-situ patterning of the GaAs substrate by electron beam lithography and conventional wet or dry etching techniques to form shallow pits in the surface which then determine the nucleation site of an InAs dot. This method is easily scalable and can be incorporated with marker structures to enable simple post-growth lithographic alignment of devices to each site-controlled dot. We demonstrate good site-control for arrays with up to 10 micron spacing between patterned sites, with no dots nucleating between the sites. We discuss the mechanism and the effect of pattern size, InAs deposition amount and growth conditions on this site-control method. Finally we discuss the photoluminescence from these dots and highlight the remaining challenges for this technique. To cite this article: P. Atkinson et al., C. R. Physique 9 (2008).

  8. Photoinduced topological phase transition in epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Zhai, Xuechao; Jin, Guojun

    2014-06-01

    In epitaxial graphene irradiated by an off-resonance circularly polarized light, we demonstrate a phase transition taking place between the band insulator and Floquet topological insulator. Considering the competition between staggered sublattice potential and photon dressing, we derive the dynamical energy gap and phase diagram in the tight-binding approximation. It is found that a threshold value of light intensity is necessary to realize a Floquet topological insulator. At the phase boundary, for each set of parameters, there is a special state with only one valley that is Dirac cone gapless, but the other remains gapped; in the band insulating phase, only one valley provides low-energy electrons, and it could be switched to the other by reversing the polarization direction of light. From these results, two electronic devices are designed: one is an optical-sensing np junction, where the photodriven unusual intervalley tunneling exhibits a stronger detectable signal than the intravalley tunneling, and the other is a topological field-effect transistor, where polarized light is used to turn on or turn off a nonequilibrium current.

  9. 5. Detail of bin wall, showing the thinner exterior wall ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    5. Detail of bin wall, showing the thinner exterior wall next to the inner wall with its alternating courses of channel tile and hollow tile. - Saint Anthony Elevator No. 3, 620 Malcom Avenue, Southeast, Minneapolis, Hennepin County, MN

  10. 22. SIDE WALL CONSTRUCTION, NORTH TRAINING WALL, LOOKING WEST FROM ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    22. SIDE WALL CONSTRUCTION, NORTH TRAINING WALL, LOOKING WEST FROM THE SAME POINT AS VIEW NO. 21. - Oakland Harbor Training Walls, Mouth of Federal Channel to Inner Harbor, Oakland, Alameda County, CA

  11. Transient hot-film sensor response in a shock tube

    NASA Technical Reports Server (NTRS)

    Roberts, A. S., Jr.; Ortgies, K. R.; Gartenberg, E.

    1989-01-01

    Shock tube experiments were performed to determine the response of a hot-film sensor, mounted flush on the side wall of a shock tube, to unsteady flow behind a normal shock wave. The present experiments attempt to isolate the response of the anemometer due only to the change in convective heat transfer at the hot-film surface. The experiments, performed at low supersonic shock speeds in air, are described along with the data acquisition procedure. The change in convective heat transfer is deduced from the data and the results are compared with those from transient boundary layer theory and another set of experimental results. Finally, a transient local heat transfer coefficient is formulated for use as the forcing function in a hot-film sensor instrument model simulation.

  12. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene.

    PubMed

    Kim, Jeehwan; Bayram, Can; Park, Hongsik; Cheng, Cheng-Wei; Dimitrakopoulos, Christos; Ott, John A; Reuter, Kathleen B; Bedell, Stephen W; Sadana, Devendra K

    2014-09-11

    There are numerous studies on the growth of planar films on sp(2)-bonded two-dimensional (2D) layered materials. However, it has been challenging to grow single-crystalline films on 2D materials due to the extremely low surface energy. Recently, buffer-assisted growth of crystalline films on 2D layered materials has been introduced, but the crystalline quality is not comparable with the films grown on sp(3)-bonded three-dimensional materials. Here we demonstrate direct van der Waals epitaxy of high-quality single-crystalline GaN films on epitaxial graphene with low defectivity and surface roughness comparable with that grown on conventional SiC or sapphire substrates. The GaN film is released and transferred onto arbitrary substrates. The post-released graphene/SiC substrate is reused for multiple growth and transfer cycles of GaN films. We demonstrate fully functional blue light-emitting diodes (LEDs) by growing LED stacks on reused graphene/SiC substrates followed by transfer onto plastic tapes.

  13. Growth of very large InN microcrystals by molecular beam epitaxy using epitaxial lateral overgrowth

    SciTech Connect

    Kamimura, J.; Kishino, K.; Kikuchi, A.

    2015-02-28

    Very thick InN (∼40 μm) was grown by molecular beam epitaxy using the epitaxial lateral overgrowth (ELO) technique. In some regions, the ELO of InN was observed as expected, indicating an important step toward fabricating quasi-bulk InN substrates. Interestingly, most parts of the sample consist of large flat-topped microcrystals and well-faceted microstructures. This is likely due to local growth condition variations during ELO, which is supported by an experiment where ELO of InN was performed on a substrate with various stripe mask patterns. TEM characterization of a flat top InN microcrystal revealed few stacking faults and only related threading dislocations. Defect-free small faceted microcrystals were also observed. The thick InN crystals show a narrow photoluminescence spectrum with a peak at 0.679 eV and linewidth of 16.8 meV at 4 K.

  14. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Kim, Jeehwan; Bayram, Can; Park, Hongsik; Cheng, Cheng-Wei; Dimitrakopoulos, Christos; Ott, John A.; Reuter, Kathleen B.; Bedell, Stephen W.; Sadana, Devendra K.

    2014-09-01

    There are numerous studies on the growth of planar films on sp2-bonded two-dimensional (2D) layered materials. However, it has been challenging to grow single-crystalline films on 2D materials due to the extremely low surface energy. Recently, buffer-assisted growth of crystalline films on 2D layered materials has been introduced, but the crystalline quality is not comparable with the films grown on sp3-bonded three-dimensional materials. Here we demonstrate direct van der Waals epitaxy of high-quality single-crystalline GaN films on epitaxial graphene with low defectivity and surface roughness comparable with that grown on conventional SiC or sapphire substrates. The GaN film is released and transferred onto arbitrary substrates. The post-released graphene/SiC substrate is reused for multiple growth and transfer cycles of GaN films. We demonstrate fully functional blue light-emitting diodes (LEDs) by growing LED stacks on reused graphene/SiC substrates followed by transfer onto plastic tapes.

  15. Not so hot "hot spots" in the oceanic mantle.

    PubMed

    Bonath, E

    1990-10-01

    Excess volcanism and crustal swelling associated with hot spots are generally attributed to thermal plumes upwelling from the mantle. This concept has been tested in the portion of the Mid-Atlantic Ridge between 34 degrees and 45 degrees (Azores hot spot). Peridotite and basalt data indicate that the upper mantle in the hot spot has undergone a high degree of melting relative to the mantle elsewhere in the North Atlantic. However, application of various geothermometers suggests that the temperature of equilibration of peridotites in the mantle was lower, or at least not higher, in the hot spot than elsewhere. The presence of H(2)O-rich metasomatized mantle domains, inferred from peridotite and basalt data, would lower the melting temperature of the hot spot mantle and thereby reconcile its high degree ofmelting with the lack of a mantle temperature anomaly. Thus, some so-called hot spots might be melting anomalies unrelated to abnormally high mantle temperature or thermal plumes.

  16. Hot oiling spreadsheet

    SciTech Connect

    Mansure, A.J.

    1996-09-01

    One of the most common oil-field treatments is hot oiling to remove paraffin from wells. Even though the practice is common, the thermal effectiveness of the process is not commonly understood. In order for producers to easily understand the thermodynamics of hot oiling, a simple tool is needed for estimating downhole temperatures. Such a tool has been developed that was distributed as a compiled, public-domain-software spreadsheet. That spreadsheet has evolved into an interactive from on the World Wide Web and has been adapted into a Windows{trademark} program by Petrolite, St. Louis MO. The development of such a tools was facilitated by expressing downhole temperatures in terms of analytic formulas. Considerable algebraic work is required to develop such formulas. Also, the data describing hot oiling is customarily a mixture of practical units that must be converted to a consistent set of units. To facilitate the algebraic manipulations and to assure unit conversions are correct, during development parallel calculations were made using the spreadsheet and a symbolic mathematics program. Derivation of the formulas considered falling film flow in the annulus and started from the transient differential equations so that the effects of the heat capacity of the tubing and casing could be included. While this approach to developing a software product does not have the power and sophistication of a finite element or difference code, it produces a user friendly product that implements the equations solved with a minimum potential for bugs. This allows emphasis in development of the product to be placed on the physics.

  17. FDNS code to predict wall heat fluxes or wall temperatures in rocket nozzles

    NASA Technical Reports Server (NTRS)

    Karr, Gerald R.

    1993-01-01

    This report summarizes the findings on the NASA contract NAG8-212, Task No. 3. The overall project consists of three tasks, all of which have been successfully completed. In addition, some supporting supplemental work, not required by the contract, has been performed and is documented herein. Task 1 involved the modification of the wall functions in the code FDNS to use a Reynolds Analogy-based method. Task 2 involved the verification of the code against experimentally available data. The data chosen for comparison was from an experiment involving the injection of helium from a wall jet. Results obtained in completing this task also show the sensitivity of the FDNS code to unknown conditions at the injection slot. Task 3 required computation of the flow of hot exhaust gases through the P&W 40K subscale nozzle. Computations were performed both with and without film coolant injection. The FDNS program tends to overpredict heat fluxes, but, with suitable modeling of backside cooling, may give reasonable wall temperature predictions. For film cooling in the P&W 40K calorimeter subscale nozzle, the average wall temperature is reduced from 1750 R to about 1050 R by the film cooling. The average wall heat flux is reduced by a factor of three.

  18. Applying CLIPS to control of molecular beam epitaxy processing

    NASA Technical Reports Server (NTRS)

    Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

    1990-01-01

    A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

  19. Epitaxial Growth of Zinc Oxide on Single Crystalline Gold Plates

    NASA Astrophysics Data System (ADS)

    Greenberg, Kathryn; Joo, John; Baram, Mor; Clarke, David; Hu, Evelyn

    2012-02-01

    Although metal-oxide interfaces are the critical components of many electronic and optical devices, it is rare to find epitaxial metal-oxide structures. We demonstrate for the first time, a method for the low temperature, epitaxial growth of zinc oxide (ZnO) on single crystalline gold plates. The gold plates, up to 100μm in width, are grown from a gold-surfactant complex. Even with the large lattice mismatch between (111) gold and (0001) ZnO, we are able to form epitaxial zinc oxide at 90^oC on top of the single crystal gold plates. This epitaxial growth is confirmed using transmission electron microscopy, electron diffraction, and electron backscatterer diffraction. Micro-photoluminescence is also performed to investigate the optical properties of the epitaxial zinc oxide. We remove the grown ZnO membranes from the gold plates using a stamping and etching process. These membranes can potentially be used to fabricate high quality microdisks and photonic crystals. The metal-oxide interfaces that we have fabricated may have the ability to be used in a number of technologically important applications, including as better electrical contacts and for improved light extraction from planar LED structures.

  20. Swimming Near the Wall

    NASA Astrophysics Data System (ADS)

    Quinn, Daniel; Moored, Keith; Dewey, Peter; Lauder, George; Smits, Alexander

    2012-11-01

    The aerodynamic loads on rectangular panels undergoing heave and pitch oscillations near a solid wall were measured using a 6-axis ATI sensor. Over a range of Strouhal numbers, reduced frequencies and flexibilities, swimming near the wall was found to increase thrust and therefore the self-propelled swimming speed. Experimental particle image velocimetry revealed an asymmetric wake structure with a momentum jet angled away from the wall. Both the thrust amplification and the asymmetric wake structure were verified and investigated further using an in-house inviscid panel method code. Supported by ONR MURI Grant N00014-08-1-0642.

  1. Hot cell examination table

    DOEpatents

    Gaal, Peter S.; Ebejer, Lino P.; Kareis, James H.; Schlegel, Gary L.

    1991-01-01

    A table for use in a hot cell or similar controlled environment for use in examining specimens. The table has a movable table top that can be moved relative to a table frame. A shaft is fixedly mounted to the frame for axial rotation. A shaft traveler having a plurality of tilted rollers biased against the shaft is connected to the table top such that rotation of the shaft causes the shaft traveler to roll along the shaft. An electromagnetic drive is connected to the shaft and the frame for controllably rotating the shaft.

  2. Hot air drum evaporator

    DOEpatents

    Black, Roger L.

    1981-01-01

    An evaporation system for aqueous radioactive waste uses standard 30 and 55 gallon drums. Waste solutions form cascading water sprays as they pass over a number of trays arranged in a vertical stack within a drum. Hot dry air is circulated radially of the drum through the water sprays thereby removing water vapor. The system is encased in concrete to prevent exposure to radioactivity. The use of standard 30 and 55 gallon drums permits an inexpensive compact modular design that is readily disposable, thus eliminating maintenance and radiation build-up problems encountered with conventional evaporation systems.

  3. Hot Subluminous Stars

    NASA Astrophysics Data System (ADS)

    Heber, U.

    2016-08-01

    Hot subluminous stars of spectral type B and O are core helium-burning stars at the blue end of the horizontal branch or have evolved even beyond that stage. Most hot subdwarf stars are chemically highly peculiar and provide a laboratory to study diffusion processes that cause these anomalies. The most obvious anomaly lies with helium, which may be a trace element in the atmosphere of some stars (sdB, sdO) while it may be the dominant species in others (He-sdB, He-sdO). Strikingly, the distribution in the Hertzsprung-Russell diagram of He-rich versus He-poor hot subdwarf stars of the globular clusters ω Cen and NGC 2808 differ from that of their field counterparts. The metal-abundance patterns of hot subdwarfs are typically characterized by strong deficiencies of some lighter elements as well as large enrichments of heavy elements. A large fraction of sdB stars are found in close binaries with white dwarf or very low-mass main sequence companions, which must have gone through a common-envelope (CE) phase of evolution. Because the binaries are detached they provide a clean-cut laboratory to study this important but yet poorly understood phase of stellar evolution. Hot subdwarf binaries with sufficiently massive white dwarf companions are viable candidate progenitors of type Ia supernovae both in the double degenerate as well as in the single degenerate scenario as helium donors for double detonation supernovae. The hyper-velocity He-sdO star US 708 may be the surviving donor of such a double detonation supernova. Substellar companions to sdB stars have also been found. For HW Vir systems the companion mass distribution extends from the stellar into the brown dwarf regime. A giant planet to the acoustic-mode pulsator V391 Peg was the first discovery of a planet that survived the red giant evolution of its host star. Evidence for Earth-size planets to two pulsating sdB stars have been reported and circumbinary giant planets or brown dwarfs have been found around HW

  4. Hot Subluminous Stars

    NASA Astrophysics Data System (ADS)

    Heber, U.

    2016-08-01

    Hot subluminous stars of spectral type B and O are core helium-burning stars at the blue end of the horizontal branch or have evolved even beyond that stage. Most hot subdwarf stars are chemically highly peculiar and provide a laboratory to study diffusion processes that cause these anomalies. The most obvious anomaly lies with helium, which may be a trace element in the atmosphere of some stars (sdB, sdO) while it may be the dominant species in others (He-sdB, He-sdO). Strikingly, the distribution in the Hertzsprung–Russell diagram of He-rich versus He-poor hot subdwarf stars of the globular clusters ω Cen and NGC 2808 differ from that of their field counterparts. The metal-abundance patterns of hot subdwarfs are typically characterized by strong deficiencies of some lighter elements as well as large enrichments of heavy elements. A large fraction of sdB stars are found in close binaries with white dwarf or very low-mass main sequence companions, which must have gone through a common-envelope (CE) phase of evolution. Because the binaries are detached they provide a clean-cut laboratory to study this important but yet poorly understood phase of stellar evolution. Hot subdwarf binaries with sufficiently massive white dwarf companions are viable candidate progenitors of type Ia supernovae both in the double degenerate as well as in the single degenerate scenario as helium donors for double detonation supernovae. The hyper-velocity He-sdO star US 708 may be the surviving donor of such a double detonation supernova. Substellar companions to sdB stars have also been found. For HW Vir systems the companion mass distribution extends from the stellar into the brown dwarf regime. A giant planet to the acoustic-mode pulsator V391 Peg was the first discovery of a planet that survived the red giant evolution of its host star. Evidence for Earth-size planets to two pulsating sdB stars have been reported and circumbinary giant planets or brown dwarfs have been found around HW

  5. MSFC hot air collectors

    NASA Technical Reports Server (NTRS)

    Anthony, K.

    1978-01-01

    A description of the hot air collector is given that includes a history of development, a history of the materials development, and a program summary. The major portion of the solar energy system cost is the collector. Since the collector is the heart of the system and the most costly subsystem, reducing the cost of producing collectors in large quantities is a major goal. This solar collector is designed to heat air and/or water cheaply and efficiently through the use of solar energy.

  6. Hot cell examination table

    SciTech Connect

    Gaal, P.S.; Ebjer, L.P.; Kareis, J.H.; Schlegel, G.L.

    1990-01-01

    This invention is comprised of a table for use in a hot cell or similar controlled environment for use in examining specimens. The table has a movable table top that can be moved relative to a table frame. A shaft is fixedly mounted to the frame for axial rotation. A shaft traveler having a plurality of tilted rollers biased against the shaft is connected to the table top such that rotation of the shaft causes the shaft traveler to roll along the shaft. An electromagnetic drive is connected to the shaft and the frame for controllably rotating the shaft.

  7. A&M. TAN607 third floor plan for hot shop. Crane control ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. TAN-607 third floor plan for hot shop. Crane control rooms and their shielding windows. Plenum. Wall rack for manipulators in hot shop. Ralph M. Parsons 902-3-ANP-607-A 103. Date: December 1952. Approved by INEEL Classification Office for public release. INEEL index code no. 034-0607-00-693-106755 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  8. Flagellar propulsion near walls

    NASA Astrophysics Data System (ADS)

    Evans, Arthur; Lauga, Eric

    2010-11-01

    Confinement and wall effects are known to affect the kinematics and propulsive characteristics of swimming microorganisms. When a solid body is dragged through a viscous fluid at constant velocity, the presence of a wall increases fluid drag, and thus the net force required to maintain speed has to increase. In contrast, recent optical trapping experiments have revealed that the propulsive force generated by human spermatozoa is decreased by the presence of boundaries. Here we use simple models to analytically elucidate the propulsive effects of a solid boundary on passively actuated filaments and model eukaryotic flagella. We show that in some cases, the increase in fluid friction induced by the wall can lead to a change in the waveform expressed by the flagella which results in a decrease of their propulsive force near a no-slip wall.

  9. Anterior vaginal wall repair

    MedlinePlus

    ... your health care provider may have you learn pelvic floor muscle exercises ( Kegel exercises ), use estrogen cream in ... GM. Anatomic defects of the abdominal wall and pelvic floor: abdominal and inguinal hernias, cystocele, urethrocele, enterocele, rectocele, ...

  10. Radiations from hot nuclei

    NASA Technical Reports Server (NTRS)

    Malik, F. Bary

    1993-01-01

    The investigation indicates that nuclei with excitation energy of a few hundred MeV to BeV are more likely to radiate hot nuclear clusters than neutrons. These daughter clusters could, furthermore, de-excite emitting other hot nuclei, and the chain continues until these nuclei cool off sufficiently to evaporate primarily neutrons. A few GeV excited nuclei could radiate elementary particles preferentially over neutrons. Impact of space radiation with materials (for example, spacecraft) produces highly excited nuclei which cool down emitting electromagnetic and particle radiations. At a few MeV excitation energy, neutron emission becomes more dominant than gamma-ray emission and one often attributes the cooling to take place by successive neutron decay. However, a recent experiment studying the cooling process of 396 MeV excited Hg-190 casts some doubt on this thinking, and the purpose of this investigation is to explore the possibility of other types of nuclear emission which might out-compete with neutron evaporation.

  11. Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy

    SciTech Connect

    Bratland, K. A.; Spila, T.; Cahill, D. G.; Greene, J. E.; Desjardins, P.

    2011-03-15

    Numerical simulations based on a discrete model describing step edge motion are used to compute the surface morphological evolution of Ge(001) layers deposited by low-temperature (T{sub s} = 45-230 deg. C) molecular beam epitaxy and to probe the relationship between surface roughening and the onset of epitaxial breakdown - the abrupt growth mode transition from epitaxial to amorphous - at temperature-dependent critical film thicknesses h{sub 1}(T{sub s}). Computed surface widths w and in-plane coherence lengths d as a function of layer thickness h exhibit good agreement with experimental values. Inspired by experimental results indicating that epitaxial breakdown is initiated at facetted interisland trenches as the surface roughness reaches a T{sub s}-independent overall aspect ratio, we show that simulated data for w/d = 0.03 correspond to thicknesses h{sub 1{proportional_to}} exp (-E{sub 1}/kT{sub s}) with E{sub 1} = 0.63 eV, a value equal to the Ge adatom diffusion activation energy on Ge(001). Simulated h{sub 1} values agree well with experimental data. Above a critical growth temperature of 170 deg. C, computed w/d values saturate at large film thicknesses, never reaching the critical aspect ratio w/d = 0.03. Thus, the model also predicts that epitaxial breakdown does not occur for T{sub s} > 170 deg. C as observed experimentally.

  12. Hot, Dry and Cloudy

    NASA Technical Reports Server (NTRS)

    2007-01-01

    [figure removed for brevity, see original site] Click on the image for movie of Hot, Dry and Cloudy

    This artist's concept shows a cloudy Jupiter-like planet that orbits very close to its fiery hot star. NASA's Spitzer Space Telescope was recently used to capture spectra, or molecular fingerprints, of two 'hot Jupiter' worlds like the one depicted here. This is the first time a spectrum has ever been obtained for an exoplanet, or a planet beyond our solar system.

    The ground-breaking observations were made with Spitzer's spectrograph, which pries apart infrared light into its basic wavelengths, revealing the 'fingerprints' of molecules imprinted inside. Spitzer studied two planets, HD 209458b and HD 189733b, both of which were found, surprisingly, to have no water in the tops of their atmospheres. The results suggest that the hot planets are socked in with dry, high clouds, which are obscuring water that lies underneath. In addition, HD209458b showed hints of silicates, suggesting that the high clouds on that planet contain very fine sand-like particles.

    Capturing the spectra from the two hot-Jupiter planets was no easy feat. The planets cannot be distinguished from their stars and instead appear to telescopes as single blurs of light. One way to get around this is through what is known as the secondary eclipse technique. In this method, changes in the total light from a so-called transiting planet system are measured as a planet is eclipsed by its star, vanishing from our Earthly point of view. The dip in observed light can then be attributed to the planet alone.

    This technique, first used by Spitzer in 2005 to directly detect the light from an exoplanet, currently only works at infrared wavelengths, where the differences in brightness between the planet and star are less, and the planet's light is easier to pick out. For example, if the experiment had been done in visible light, the total light from the system would appear to be unchanged

  13. Localized States Influence Spin Transport in Epitaxial Graphene

    NASA Astrophysics Data System (ADS)

    Maassen, T.; van den Berg, J. J.; Huisman, E. H.; Dijkstra, H.; Fromm, F.; Seyller, T.; van Wees, B. J.

    2013-02-01

    We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to Hanle spin precession measurements obtained on monolayer epitaxial graphene on SiC(0001). Combined with newly performed measurements on quasi-free-standing monolayer epitaxial graphene on SiC(0001) our analysis shows that the different values for the diffusion coefficient measured in charge and spin transport measurements on monolayer epitaxial graphene on SiC(0001) and the high values for the spin relaxation time can be explained by the influence of localized states arising from the buffer layer at the interface between the graphene and the SiC surface.

  14. Epitaxial Growth of CdTe by H2 Sputtering

    NASA Astrophysics Data System (ADS)

    Nishibayashi, Yoshiki; Tokumitsu, Yoji; Saito, Koji; Imura, Takeshi; Osaka, Yukio

    1988-10-01

    CdTe films can be grown epitaxially on InSb(100) by chemical sputtering in H2. The crystalline quality of the epitaxial layers is improved when the substrate temperatures are in the range of 200 to 250°C at a high rf discharge power of 400 W. In channeling experiments employing Rutherford backscattering spectrometry, the χmin (aligned yield/random yield) in the film prepared at 270°C and 400 W is 9.5%. A lattice strain of 0.05% is obtained from the results of X-ray diffraction. These values show that the crystalline quality of the epitaxial film grown by H2 sputtering is superior to the film grown by Ar sputtering.

  15. Electric circuit model for strained-layer epitaxy

    NASA Astrophysics Data System (ADS)

    Kujofsa, Tedi; Ayers, John E.

    2016-11-01

    For the design and analysis of a strained-layer semiconductor device structure, the equilibrium strain profile may be determined numerically by energy minimization but this method is computationally intense and non-intuitive. Here we present an electric circuit model approach for the equilibrium analysis of an epitaxial stack, in which each sublayer may be represented by an analogous configuration involving a current source, a resistor, a voltage source, and an ideal diode. The resulting node voltages in the analogous electric circuit correspond to the equilibrium strains in the original epitaxial structure. This new approach enables analysis using widely accessible circuit simulators, and an intuitive understanding of electric circuits may be translated to the relaxation of strained-layer structures. In this paper, we describe the mathematical foundation of the electrical circuit model and demonstrate its application to epitaxial layers of Si1‑x Ge x grown on a Si (001) substrate.

  16. Enabling Technologies for Ceramic Hot Section Components

    SciTech Connect

    Venkat Vedula; Tania Bhatia

    2009-04-30

    Silicon-based ceramics are attractive materials for use in gas turbine engine hot sections due to their high temperature mechanical and physical properties as well as lower density than metals. The advantages of utilizing ceramic hot section components include weight reduction, and improved efficiency as well as enhanced power output and lower emissions as a result of reducing or eliminating cooling. Potential gas turbine ceramic components for industrial, commercial and/or military high temperature turbine applications include combustor liners, vanes, rotors, and shrouds. These components require materials that can withstand high temperatures and pressures for long duration under steam-rich environments. For Navy applications, ceramic hot section components have the potential to increase the operation range. The amount of weight reduced by utilizing a lighter gas turbine can be used to increase fuel storage capacity while a more efficient gas turbine consumes less fuel. Both improvements enable a longer operation range for Navy ships and aircraft. Ceramic hot section components will also be beneficial to the Navy's Growth Joint Strike Fighter (JSF) and VAATE (Versatile Affordable Advanced Turbine Engines) initiatives in terms of reduced weight, cooling air savings, and capability/cost index (CCI). For DOE applications, ceramic hot section components provide an avenue to achieve low emissions while improving efficiency. Combustors made of ceramic material can withstand higher wall temperatures and require less cooling air. Ability of the ceramics to withstand high temperatures enables novel combustor designs that have reduced NO{sub x}, smoke and CO levels. In the turbine section, ceramic vanes and blades do not require sophisticated cooling schemes currently used for metal components. The saved cooling air could be used to further improve efficiency and power output. The objectives of this contract were to develop technologies critical for ceramic hot section

  17. Improved engine wall models for Large Eddy Simulation (LES)

    NASA Astrophysics Data System (ADS)

    Plengsaard, Chalearmpol

    Improved wall models for Large Eddy Simulation (LES) are presented in this research. The classical Werner-Wengle (WW) wall shear stress model is used along with near-wall sub-grid scale viscosity. A sub-grid scale turbulent kinetic energy is employed in a model for the eddy viscosity. To gain better heat flux results, a modified classical variable-density wall heat transfer model is also used. Because no experimental wall shear stress results are available in engines, the fully turbulent developed flow in a square duct is chosen to validate the new wall models. The model constants in the new wall models are set to 0.01 and 0.8, respectively and are kept constant throughout the investigation. The resulting time- and spatially-averaged velocity and temperature wall functions from the new wall models match well with the law-of-the-wall experimental data at Re = 50,000. In order to study the effect of hot air impinging walls, jet impingement on a flat plate is also tested with the new wall models. The jet Reynolds number is equal to 21,000 and a fixed jet-to-plate spacing of H/D = 2.0. As predicted by the new wall models, the time-averaged skin friction coefficient agrees well with experimental data, while the computed Nusselt number agrees fairly well when r/D > 2.0. Additionally, the model is validated using experimental data from a Caterpillar engine operated with conventional diesel combustion. Sixteen different operating engine conditions are simulated. The majority of the predicted heat flux results from each thermocouple location follow similar trends when compared with experimental data. The magnitude of peak heat fluxes as predicted by the new wall models is in the range of typical measured values in diesel combustion, while most heat flux results from previous LES wall models are over-predicted. The new wall models generate more accurate predictions and agree better with experimental data.

  18. A molecular beam epitaxy facility for in situ neutron scattering

    SciTech Connect

    Dura, J. A.; LaRock, J.

    2009-07-15

    A molecular beam epitaxy (MBE) facility has been built to enable in situ neutron scattering measurements during growth of epitaxial layers. While retaining the full capabilities of a research MBE chamber, this facility has been optimized for polarized neutron reflectometry measurements. Optimization includes a compact lightweight portable design, a neutron window, controllable magnetic field, deposition across a large 76 mm diameter sample with exceptional flux uniformity, and sample temperatures continuously controllable from 38 to 1375 K. A load lock chamber allows for sample insertion, storage of up to 4 samples, and docking with other facilities. The design and performance of this chamber are described here.

  19. Seed layer technique for high quality epitaxial manganite films

    PubMed Central

    Graziosi, P.; Gambardella, A.; Calbucci, M.; O’Shea, K.; MacLaren, D. A.; Bergenti, I.; Homonnay, N.; Schmidt, G.; Pullini, D.; Busquets-Mataix, D.; Dediu, V.

    2016-01-01

    We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

  20. Seed layer technique for high quality epitaxial manganite films

    NASA Astrophysics Data System (ADS)

    Graziosi, P.; Gambardella, A.; Calbucci, M.; O'Shea, K.; MacLaren, D. A.; Riminucci, A.; Bergenti, I.; Fugattini, S.; Prezioso, M.; Homonnay, N.; Schmidt, G.; Pullini, D.; Busquets-Mataix, D.; Dediu, V.

    2016-08-01

    We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

  1. Seed layer technique for high quality epitaxial manganite films

    PubMed Central

    Graziosi, P.; Gambardella, A.; Calbucci, M.; O’Shea, K.; MacLaren, D. A.; Bergenti, I.; Homonnay, N.; Schmidt, G.; Pullini, D.; Busquets-Mataix, D.; Dediu, V.

    2016-01-01

    We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived. PMID:27648371

  2. Process for growing epitaxial gallium nitride and composite wafers

    DOEpatents

    Weber, Eicke R.; Subramanya, Sudhir G.; Kim, Yihwan; Kruger, Joachim

    2003-05-13

    A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.

  3. Electron irradiation effects in epitaxial InP solar cells

    NASA Technical Reports Server (NTRS)

    Pearsall, N. M.; Robson, N.; Sambell, A. J.; Anspaugh, B.; Cross, T. A.

    1991-01-01

    Performance data for InP-based solar cells after irradiation with 1-MeV electrons up to a fluence of 1 x 1016 e/cm2 are presented. Three InP cell structures are considered. Two of these have epitaxially grown active regions, these being a homojunction design and in ITO/InP structure. These are compared with ITO/InP cells without the epitaxial base region. The cell parameter variations, the influence of illumination during irradiation, and the effect on cell spectral response and capacitance measurements are discussed. Substantial performance recovery after thermal annealing at 90 C is reported.

  4. Optical Probing of metamagnetic phases in epitaxial EuSe

    SciTech Connect

    Galgano, G. D.; Henriques, A. B.; Bauer, G.; Springholz, G.

    2011-12-23

    EuSe is a wide gap magnetic semiconductors with a potential for applications in proof-of-concept spintronic devices. When the temperature is lowered, EuSe goes through sharp transitions between a variety of magnetic phases and is thus described as metamagnetic. The purpose of the present investigation is to correlate the magnetic order to the sharp dichroic doublet, discovered recently in high quality thin epitaxial layers of EuSe, grown by molecular beam epitaxy. We report detailed measurements of the doublet positions and intensities as a function of magnetic field in low temperatures, covering several magnetic phases.

  5. Molecular beam epitaxial growth of GaP on Si

    NASA Astrophysics Data System (ADS)

    Wright, S. L.; Kroemer, H.; Inada, M.

    1984-04-01

    The molecular beam epitaxial growth of GaP on Si was investigated, with the aim of at least approaching device-quality interfaces. Gallium-primed growth on (211)-oriented substrates yielded layers which were free of antiphase domains, and which were of much higher quality than growths on other orientations. A tentative energy-band lineup is proposed, which is consistent with the electrical data. Heterojunction bipolar transistors were fabricated with emitter injection efficiencies up to 90 percent, in spite of indications that the epitaxial emitter layer was far less heavily doped than the base.

  6. Influence of porous-wall thermal effectiveness on turbulent-boundary-layer heat transfer

    NASA Technical Reports Server (NTRS)

    Lecuyer, M. R.; Colladay, R. S.

    1972-01-01

    In view of the interest in employing porous wall materials for which the wall thermal effectiveness is less than unity, the influence of the effectiveness on the convective heat-transfer coefficient is examined. A Couette-flow model of the turbulent boundary layer shows that the familiar expression for the Stanton number with mass transfer at the boundary is modified by a correction factor that accounts for the wall thermal effectiveness and the effectiveness of the film layer in protecting the surface from the hot gas stream. The correction term is found be of considerable importance for low values of blowing rate and wall thermal effectiveness.

  7. The Deep Hot Biosphere

    NASA Astrophysics Data System (ADS)

    Craig, Harmon

    The first inhabitants of planet Earth were single-celled microorganisms and they are still with us today. Their name is truly legion, for they live everywhere, from boiling hot springs at the Earth's surface and on the seafloor to the coldest waters of the oceans and the Antarctic lakes. They are the masters of evolutionary adaptation, who have colonized the entire range of conditions under which water can exist as a liquid. At some ancient mythic time billions of years ago in a witches' brew of precursory molecules, somewhere, somehow, on a sunny Precambrian day bright with promise some of these molecules came together in the first coupling, learned to replicate, create enzymes, metabolize, and seal themselves into protective membranes inside of which they began the process of living. How they did this is our greatest mystery, for they are our primordial ancestors and we do not understand ourselves until we understand them.

  8. TRUEX hot demonstration

    SciTech Connect

    Chamberlain, D.B.; Leonard, R.A.; Hoh, J.C.; Gay, E.C.; Kalina, D.G.; Vandegrift, G.F.

    1990-04-01

    In FY 1987, a program was initiated to demonstrate technology for recovering transuranic (TRU) elements from defense wastes. This hot demonstration was to be carried out with solution from the dissolution of irradiated fuels. This recovery would be accomplished with both PUREX and TRUEX solvent extraction processes. Work planned for this program included preparation of a shielded-cell facility for the receipt and storage of spent fuel from commercial power reactors, dissolution of this fuel, operation of a PUREX process to produce specific feeds for the TRUEX process, operation of a TRUEX process to remove residual actinide elements from PUREX process raffinates, and processing and disposal of waste and product streams. This report documents the work completed in planning and starting up this program. It is meant to serve as a guide for anyone planning similar demonstrations of TRUEX or other solvent extraction processing in a shielded-cell facility.

  9. Response of hot nuclei

    SciTech Connect

    Broglia, R.A.

    1986-01-01

    The dipole giant resonance is reviewed, as it is the only vibration which has been experimentally identified in the decay of hot nuclei. The mechanism of exciting the resonance and the mode of the resonance are described. The methods used to calculate the vibrations from the shell model are discussed, including the Hartree-Fock approximation and random phase approximation. Nuclei formed by compound nuclear reactions, which possess high excitation energy and angular momentum, are considered. It is argued that the stability of the dipole may be used to advantage in the study of other properties of nuclei at high excitation. It is also considered possible that the discussion of the dipole giant resonance may be extended to the gamma decay of the isovector quadrupole vibration. 26 refs., 18 figs. (LEW)

  10. HOT CELL BUILDING, TRA632, INTERIOR. WINDOWED ROOM IS OFFICE; NEXT ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    HOT CELL BUILDING, TRA-632, INTERIOR. WINDOWED ROOM IS OFFICE; NEXT DOOR WAS DARKROOM, AND THIRD DOOR LED TO ANOTHER OFFICE. ALL ARE ALONG NORTH WALL OF BUILDING (ETR EXTENSION OF 1958). CAMERA FACES NORTHEAST. PUMICE BLOCK WALLS. INL NEGATIVE NO. HD46-29-1. Mike Crane, Photographer, 2/2005 - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

  11. CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CP640) LOOKING NORTHWEST ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CP-640) LOOKING NORTHWEST SHOWING FORMING AND PLACEMENT OF REINFORCING STEEL FOR SOUTH WALLS OF CELLS 1, 3, 4 AND 5 AND WEST WALL FOR CELLS 1 AND 2; CONSTRUCTION 13 PERCENT COMPLETE. INL PHOTO NUMBER NRTS 59-6436. J. Anderson, Photographer, 12/18/1959 - Idaho National Engineering Laboratory, Idaho Chemical Processing Plant, Fuel Reprocessing Complex, Scoville, Butte County, ID

  12. A&M. Hot liquid waste treatment building (TAN616). Contextual view, facing ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. Hot liquid waste treatment building (TAN-616). Contextual view, facing south. Wall of hot shop (TAN-607) with high bay at left of view. Lower-roofed building at left edge of view is TAN- 633, hot cell annex. Complex at center of view is TAN-616. Tall metal building with gable roof is TAN-615. Photographer: Ron Paarmann. Date: September 22, 1997. INEEL negative no. HD-20-2-2 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  13. Heteroepitaxial Growth of Single-Walled Carbon Nanotubes from Boron Nitride

    PubMed Central

    Tang, Dai-Ming; Zhang, Li-Li; Liu, Chang; Yin, Li-Chang; Hou, Peng-Xiang; Jiang, Hua; Zhu, Zhen; Li, Feng; Liu, Bilu; Kauppinen, Esko I.; Cheng, Hui-Ming

    2012-01-01

    The growth of single-walled carbon nanotubes (SWCNTs) with predefined structure is of great importance for both fundamental research and their practical applications. Traditionally, SWCNTs are grown from a metal catalyst with a vapor-liquid-solid mechanism, where the catalyst is in liquid state with fluctuating structures, and it is intrinsically unfavorable for the structure control of SWCNTs. Here we report the heteroepitaxial growth of SWCNTs from a platelet boron nitride nanofiber (BNNF), which is composed of stacked (002) planes and is stable at high temperatures. SWCNTs are found to grow epitaxially from the open (002) edges of the BNNFs, and the diameters of the SWCNTs are multiples of the BN (002) interplanar distance. In situ transmission electron microscopy observations coupled with first principles calculations reveal that the growth of SWCNTs from the BNNFs follows a vapor-solid-solid mechanism. Our work opens opportunities for the control over the structure of SWCNTs by hetero-crystallographic epitaxy. PMID:23240076

  14. In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy.

    PubMed

    Zuo, Zheng; Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zheng, Jian-Guo; Liu, Jianlin

    2015-01-01

    Van der Waals materials have received a great deal of attention for their exceptional layered structures and exotic properties, which can open up various device applications in nanoelectronics. However, in situ epitaxial growth of dissimilar van der Waals materials remains challenging. Here we demonstrate a solution for fabricating van der Waals heterostructures. Graphene/hexagonal boron nitride (h-BN) heterostructures were synthesized on cobalt substrates by using molecular beam epitaxy. Various characterizations were carried out to evaluate the heterostructures. Wafer-scale heterostructures consisting of single-layer/bilayer graphene and multilayer h-BN were achieved. The mismatch angle between graphene and h-BN is below 1°.

  15. Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Lu, Zhen-Yu; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-01

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {111}B substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {113}B faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  16. Experimental Study of Ignition by Hot Spot in Internal Combustion Engines

    NASA Technical Reports Server (NTRS)

    Serruys, Max

    1938-01-01

    In order to carry out the contemplated study, it was first necessary to provide hot spots in the combustion chamber, which could be measured and whose temperature could be changed. It seemed difficult to realize both conditions working solely on the temperature of the cooling water in a way so as to produce hot spots on the cylinder wall capable of provoking autoignition. Moreover, in the majority of practical cases, autoignition is produced by the spark plug, one of the least cooled parts in the engine. The first procedure therefore did not resemble that which most generally occurs in actual engine operation. All of these considerations caused us to reproduce similar hot spots at the spark plugs. The hot spots produced were of two kinds and designated with the name of thermo-electric spark plug and of metallic hot spot.

  17. Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Asghar, M.; K., Mahmood; A. Hasan, M.; T. Ferguson, I.; Tsu, R.; Willander, M.

    2014-09-01

    We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy (MBE). The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current—voltage (I—V) measurements demonstrate a good quality p-type Schottky device. A new deep acceptor level is observed in the ZnO layer having activation energy of 0.49 ±0.03 eV and capture cross-section of 8.57 × 10-18 cm2. Based on the results from Raman spectroscopy, photoluminescence, and secondary ion mass spectroscopy (SIMS) of the ZnO layer, the observed acceptor trap level is tentatively attributed to a nitrogen-zinc vacancy complex in ZnO.

  18. Ultimate Cost of Building Walls.

    ERIC Educational Resources Information Center

    Grimm, Clayford T.; Gross, James G.

    The need for economic analysis of building walls is discussed, and the factors influencing the ultimate cost of exterior walls are studied. The present worth method is used to analyze three types of exterior non-loadbearing panel or curtain walls. Anticipated costs are expressed in terms of their present value per square foot of wall area. The…

  19. Hot hollow cathode gun assembly

    DOEpatents

    Zeren, J.D.

    1983-11-22

    A hot hollow cathode deposition gun assembly includes a hollow body having a cylindrical outer surface and an end plate for holding an adjustable heat sink, the hot hollow cathode gun, two magnets for steering the plasma from the gun into a crucible on the heat sink, and a shutter for selectively covering and uncovering the crucible.

  20. Effects of honeycomb shaped walls on the flow regime between a rotating disk and a stationary wall

    NASA Astrophysics Data System (ADS)

    Uzkan, T.; Lipstein, N. J.

    1986-06-01

    In order to cool a gas turbine disk with a limited supply of coolant air, the radial inflow of hot gases between rotor disk and housing must be reduced. Attention is presently given to the use of different surface shapes on the stationary housing to inhibit disk pumping capacity and hence to reduce the radial influx of hot gases into the clearance. The basic geometry that was experimentally investigated was the flow field between a smooth cylindrical rotating disk parallel to a plain circular coaxial wall open to the free space at the disk periphery. The results obtained are presented in terms of the tangential and radial velocity profiles in the gap, the static pressure measurements, and the disk torque coefficients. A honeycombed stationary wall surface had a profound effect on the ingestion of external flow into the gap from the disk periphery.

  1. Musculoskeletal chest wall pain

    PubMed Central

    Fam, Adel G.; Smythe, Hugh A.

    1985-01-01

    The musculoskeletal structures of the thoracic wall and the neck are a relatively common source of chest pain. Pain arising from these structures is often mistaken for angina pectoris, pleurisy or other serious disorders. In this article the clinical features, pathogenesis and management of the various musculoskeletal chest wall disorders are discussed. The more common causes are costochondritis, traumatic muscle pain, trauma to the chest wall, “fibrositis” syndrome, referred pain, psychogenic regional pain syndrome, and arthritis involving articulations of the sternum, ribs and thoracic spine. Careful analysis of the history, physical findings and results of investigation is essential for precise diagnosis and effective treatment. ImagesFig. 3Fig. 4Fig. 5 PMID:4027804

  2. Mouse bladder wall injection.

    PubMed

    Fu, Chi-Ling; Apelo, Charity A; Torres, Baldemar; Thai, Kim H; Hsieh, Michael H

    2011-07-12

    Mouse bladder wall injection is a useful technique to orthotopically study bladder phenomena, including stem cell, smooth muscle, and cancer biology. Before starting injections, the surgical area must be cleaned with soap and water and antiseptic solution. Surgical equipment must be sterilized before use and between each animal. Each mouse is placed under inhaled isoflurane anesthesia (2-5% for induction, 1-3% for maintenance) and its bladder exposed by making a midline abdominal incision with scissors. If the bladder is full, it is partially decompressed by gentle squeezing between two fingers. The cell suspension of interest is intramurally injected into the wall of the bladder dome using a 29 or 30 gauge needle and 1 cc or smaller syringe. The wound is then closed using wound clips and the mouse allowed to recover on a warming pad. Bladder wall injection is a delicate microsurgical technique that can be mastered with practice.

  3. Axion domain wall baryogenesis

    SciTech Connect

    Daido, Ryuji; Kitajima, Naoya; Takahashi, Fuminobu

    2015-07-28

    We propose a new scenario of baryogenesis, in which annihilation of axion domain walls generates a sizable baryon asymmetry. Successful baryogenesis is possible for a wide range of the axion mass and decay constant, m≃10{sup 8}–10{sup 13} GeV and f≃10{sup 13}–10{sup 16} GeV. Baryonic isocurvature perturbations are significantly suppressed in our model, in contrast to various spontaneous baryogenesis scenarios in the slow-roll regime. In particular, the axion domain wall baryogenesis is consistent with high-scale inflation which generates a large tensor-to-scalar ratio within the reach of future CMB B-mode experiments. We also discuss the gravitational waves produced by the domain wall annihilation and its implications for the future gravitational wave experiments.

  4. Thermal treatment wall

    DOEpatents

    Aines, Roger D.; Newmark, Robin L.; Knauss, Kevin G.

    2000-01-01

    A thermal treatment wall emplaced to perform in-situ destruction of contaminants in groundwater. Thermal destruction of specific contaminants occurs by hydrous pyrolysis/oxidation at temperatures achievable by existing thermal remediation techniques (electrical heating or steam injection) in the presence of oxygen or soil mineral oxidants, such as MnO.sub.2. The thermal treatment wall can be installed in a variety of configurations depending on the specific objectives, and can be used for groundwater cleanup, wherein in-situ destruction of contaminants is carried out rather than extracting contaminated fluids to the surface, where they are to be cleaned. In addition, the thermal treatment wall can be used for both plume interdiction and near-wellhead in-situ groundwater treatment. Thus, this technique can be utilized for a variety of groundwater contamination problems.

  5. Hot Spot Cosmic Accelerators

    NASA Astrophysics Data System (ADS)

    2002-11-01

    length of more than 3 million light-years, or no less than one-and-a-half times the distance from the Milky Way to the Andromeda galaxy, this structure is indeed gigantic. The region where the jets collide with the intergalactic medium are known as " hot spots ". Superposing the intensity contours of the radio emission from the southern "hot spot" on a near-infrared J-band (wavelength 1.25 µm) VLT ISAAC image ("b") shows three distinct emitting areas; they are even better visible on the I-band (0.9 µm) FORS1 image ("c"). This emission is obviously associated with the shock front visible on the radio image. This is one of the first times it has been possible to obtain an optical/near-IR image of synchrotron emission from such an intergalactic shock and, thanks to the sensitivity and image sharpness of the VLT, the most detailed view of its kind so far . The central area (with the strongest emission) is where the plasma jet from the galaxy centre hits the intergalactic medium. The light from the two other "knots", some 10 - 15,000 light-years away from the central "hot spot", is also interpreted as synchrotron emission. However, in view of the large distance, the astronomers are convinced that it must be caused by electrons accelerated in secondary processes at those sites . The new images thus confirm that electrons are being continuously accelerated in these "knots" - hence called "cosmic accelerators" - far from the galaxy and the main jets, and in nearly empty space. The exact physical circumstances of this effect are not well known and will be the subject of further investigations. The present VLT-images of the "hot spots" near 3C 445 may not have the same public appeal as some of those beautiful images that have been produced by the same instruments during the past years. But they are not less valuable - their unusual importance is of a different kind, as they now herald the advent of fundamentally new insights into the mysteries of this class of remote and active

  6. Practical hot oiling and hot watering for paraffin control

    SciTech Connect

    Mansure, A.J.; Barker, K.M.

    1994-03-01

    One of the common oil-field wellbore problems is paraffin deposition. Even though hot oiling or hot watering is usually the first method tried for removing paraffin, few operators appreciate the limitations of ``hot oiling`` and the potential for the fluid to aggravate well problems and cause formation damage. Field tests have shown that the chemical and thermal processes that occur during ``hot oiling`` are very complex and that there are significant variations in practices among operators. Key issues include: (1) During a typical hot oiling job, a significant amount of the fluid injected into the well goes into the formation, and hence, particulates and chemicals in the fluid have the potential to damage the formation. (2) Hot oiling can vaporize oil in the tubing faster than the pump lifts oil. This interrupts paraffin removal from the well, and thus the wax is refined into harder deposits, goes deeper into the well, and can stick rods. These insights have been used to determine good ``hot oiling`` practices designed to maximize wax removal and minimize formation damage.

  7. Depositing spacing layers on magnetic film with liquid phase epitaxy

    NASA Technical Reports Server (NTRS)

    Moody, J. W.; Shaw, R. W.; Sanfort, R. M.

    1975-01-01

    Liquid phase epitaxy spacing layer is compatible with systems which are hard-bubble proofed by use of second magnetic garnet film as capping layer. Composite is superior in that: circuit fabrication time is reduced; adherence is superior; visibility is better; and, good match of thermal expansion coefficients is provided.

  8. Crystallization engineering as a route to epitaxial strain control

    SciTech Connect

    Akbashev, Andrew R.; Plokhikh, Aleksandr V.; Barbash, Dmitri; Lofland, Samuel E.; Spanier, Jonathan E.

    2015-10-01

    The controlled synthesis of epitaxial thin films offers opportunities for tuning their functional properties via enabling or suppressing strain relaxation. Examining differences in the epitaxial crystallization of amorphous oxide films, we report on an alternate, low-temperature route for strain engineering. Thin films of amorphous Bi–Fe–O were grown on (001)SrTiO{sub 3} and (001)LaAlO{sub 3} substrates via atomic layer deposition. In situ X-ray diffraction and X-ray photoelectron spectroscopy studies of the crystallization of the amorphous films into the epitaxial (001)BiFeO{sub 3} phase reveal distinct evolution profiles of crystallinity with temperature. While growth on (001)SrTiO{sub 3} results in a coherently strained film, the same films obtained on (001)LaAlO{sub 3} showed an unstrained, dislocation-rich interface, with an even lower temperature onset of the perovskite phase crystallization than in the case of (001)SrTiO{sub 3}. Our results demonstrate how the strain control in an epitaxial film can be accomplished via its crystallization from the amorphous state.

  9. Growth of Epitaxial Oxide Thin Films on Graphene

    NASA Astrophysics Data System (ADS)

    Zou, Bin; Walker, Clementine; Wang, Kai; Tileli, Vasiliki; Shaforost, Olena; Harrison, Nicholas M.; Klein, Norbert; Alford, Neil M.; Petrov, Peter K.

    2016-08-01

    The transfer process of graphene onto the surface of oxide substrates is well known. However, for many devices, we require high quality oxide thin films on the surface of graphene. This step is not understood. It is not clear why the oxide should adopt the epitaxy of the underlying oxide layer when it is deposited on graphene where there is no lattice match. To date there has been no explanation or suggestion of mechanisms which clarify this step. Here we show a mechanism, supported by first principles simulation and structural characterisation results, for the growth of oxide thin films on graphene. We describe the growth of epitaxial SrTiO3 (STO) thin films on a graphene and show that local defects in the graphene layer (e.g. grain boundaries) act as bridge-pillar spots that enable the epitaxial growth of STO thin films on the surface of the graphene layer. This study, and in particular the suggestion of a mechanism for epitaxial growth of oxides on graphene, offers new directions to exploit the development of oxide/graphene multilayer structures and devices.

  10. Epitaxial gallium oxide on a SiC/Si substrate

    NASA Astrophysics Data System (ADS)

    Kukushkin, S. A.; Nikolaev, V. I.; Osipov, A. V.; Osipova, E. V.; Pechnikov, A. I.; Feoktistov, N. A.

    2016-09-01

    Well-textured gallium oxide β-Ga2O3 layers with a thickness of 1 μm and a close to epitaxial layer structure were grown by the method of chloride vapor phase epitaxy on Si(111) wafers with a nano-SiC buffer layer. In order to improve the growth, a high-quality silicon carbide buffer layer 100 nm thick was preliminarily synthesized by the substitution of atoms on the silicon surface. The β-Ga2O3 films were thoroughly investigated using reflection high-energy electron diffraction, ellipsometry, X-ray diffraction, scanning electron microscopy, and micro-Raman spectroscopy. The investigations revealed that the films are textured with a close to epitaxial structure and consist of a pure β-phase Ga2O3 with the (overline 2 01) orientation. The dependence of the dielectric constant of epitaxial β-Ga2O3 on the photon energy ranging from 0.7 to 6.5 eV in the isotropic approximation was measured.

  11. Epitaxial silicide formation on recoil-implanted substrates

    SciTech Connect

    Hashimoto, Shin; Egashira, Kyoko; Tanaka, Tomoya; Etoh, Ryuji; Hata, Yoshifumi; Tung, R. T.

    2005-01-15

    An epitaxy-on-recoil-implanted-substrate (ERIS) technique is presented. A disordered surface layer, generated by forward recoil implantation of {approx}0.7-3x10{sup 15} cm{sup -2} of oxygen during Ar plasma etching of surface oxide, is shown to facilitate the subsequent epitaxial growth of {approx}25-35-nm-thick CoSi{sub 2} layers on Si(100). The dependence of the epitaxial fraction of the silicide on the recoil-implantation parameters is studied in detail. A reduction in the silicide reaction rate due to recoil-implanted oxygen is shown to be responsible for the observed epitaxial formation, similar to mechanisms previously observed for interlayer-mediated growth techniques. Oxygen is found to remain inside the fully reacted CoSi{sub 2} layer, likely in the form of oxide precipitates. The presence of these oxide precipitates, with only a minor effect on the sheet resistance of the silicide layer, has a surprisingly beneficial effect on the thermal stability of the silicide layers. The agglomeration of ERIS-grown silicide layers on polycrystalline Si is significantly suppressed, likely from a reduced diffusivity due to oxygen in the grain boundaries. The implications of the present technique for the processing of deep submicron devices are discussed.

  12. Growth of Epitaxial Oxide Thin Films on Graphene

    PubMed Central

    Zou, Bin; Walker, Clementine; Wang, Kai; Tileli, Vasiliki; Shaforost, Olena; Harrison, Nicholas M.; Klein, Norbert; Alford, Neil M.; Petrov, Peter K.

    2016-01-01

    The transfer process of graphene onto the surface of oxide substrates is well known. However, for many devices, we require high quality oxide thin films on the surface of graphene. This step is not understood. It is not clear why the oxide should adopt the epitaxy of the underlying oxide layer when it is deposited on graphene where there is no lattice match. To date there has been no explanation or suggestion of mechanisms which clarify this step. Here we show a mechanism, supported by first principles simulation and structural characterisation results, for the growth of oxide thin films on graphene. We describe the growth of epitaxial SrTiO3 (STO) thin films on a graphene and show that local defects in the graphene layer (e.g. grain boundaries) act as bridge-pillar spots that enable the epitaxial growth of STO thin films on the surface of the graphene layer. This study, and in particular the suggestion of a mechanism for epitaxial growth of oxides on graphene, offers new directions to exploit the development of oxide/graphene multilayer structures and devices. PMID:27515496

  13. Spatially Correlated Disorder in Epitaxial van der Waals Heterostructures

    NASA Astrophysics Data System (ADS)

    Laanait, Nouamane; Zhang, Zhan; Schleputz, Christian; Liu, Ying; Wojcik, Michael; Myers-Ward, Rachael; Gaskill, D. Kurt; Fenter, Paul; Li, Lian

    The structural cohesion of van der Waals (vdW) heterostructures relies upon a cooperative balance between strong intra-layer bonded interactions and weak inter-layer coupling. The confinement of extended defects to within a single vdW layer and competing interactions introduced by epitaxial constraints could generate fundamentally new structural disorders. Here we report on the presence of spatially correlated and localized disorder states that coexist with the near perfect crystallographic order along the growth direction of epitaxial vdW heterostructure of Bi2Se3/graphene/SiC grown by molecular beam epitaxy. With the depth penetration of hard X-ray diffraction microscopy and high-resolution surface scattering, we imaged local structural configurations from the atomic to mesoscopic length scales, and found that these disorder states result as a confluence of atomic scale modulations in the strength of vdW layer-layer interactions and nanoscale boundary conditions imposed by the substrate. These findings reveal a vast landscape of novel disorder states that can be manifested in epitaxial vdW heterostructures. Supported by the Wigner Fellowship program at Oak Ridge Nat'l Lab.

  14. Growth of Epitaxial Oxide Thin Films on Graphene.

    PubMed

    Zou, Bin; Walker, Clementine; Wang, Kai; Tileli, Vasiliki; Shaforost, Olena; Harrison, Nicholas M; Klein, Norbert; Alford, Neil M; Petrov, Peter K

    2016-01-01

    The transfer process of graphene onto the surface of oxide substrates is well known. However, for many devices, we require high quality oxide thin films on the surface of graphene. This step is not understood. It is not clear why the oxide should adopt the epitaxy of the underlying oxide layer when it is deposited on graphene where there is no lattice match. To date there has been no explanation or suggestion of mechanisms which clarify this step. Here we show a mechanism, supported by first principles simulation and structural characterisation results, for the growth of oxide thin films on graphene. We describe the growth of epitaxial SrTiO3 (STO) thin films on a graphene and show that local defects in the graphene layer (e.g. grain boundaries) act as bridge-pillar spots that enable the epitaxial growth of STO thin films on the surface of the graphene layer. This study, and in particular the suggestion of a mechanism for epitaxial growth of oxides on graphene, offers new directions to exploit the development of oxide/graphene multilayer structures and devices. PMID:27515496

  15. Electron heat conductivity of epitaxial graphene on silicon carbide

    NASA Astrophysics Data System (ADS)

    Alisultanov, Z. Z.; Meilanov, R. P.

    2016-08-01

    The diagonal component of the electron heat conductivity tensor of epitaxial graphene formed in a semiconductor has been investigated within a simple analytical model. It is shown that the heat conductivity sharply changes at a chemical potential close to the substrate band gap edge. Low-temperature expressions for the heat conductivity are derived.

  16. Hard proximity induced superconducting gap in semiconductor - superconductor epitaxial hybrids

    NASA Astrophysics Data System (ADS)

    Jespersen, Thomas; Krogstrup, Peter; Ziino, Nino; Albrecht, Sven; Chang, Willy; Madsen, Morten; Johnson, Erik; Kuemmeth, Ferdinand; Nygård, Jesper; Marcus, Charles

    2015-03-01

    We present molecular beam epitaxy grown InAs semiconductor nanowires capped with a shell of aluminum (superconductor). The hybrid wires are grown without breaking vacuum, resulting in an epitaxial interface between the two materials as demonstrated by detailed transmission electron microscopy and simulations. The domain matching at the interface is discussed. Incorporating the epitaxial nanowire hybrids in electrical devices we performed detailed tunneling spectroscopy of the proximity induced superconducting gap in the InAs core at 20 mK. We find the sub-gap conductance being at least a factor 200 smaller than the normal state value (gap hardness). This is a significant improvement compared to devices fabricated by conventional lithographic methods and metal evaporation showing no more than a factor of ~ 5 . The epitaxial hybrids seem to solve the soft gap problem associated with the use of nanowire hybrids for future applications in topological quantum information based on Majorana zero modes. Research supported by Microsoft Station Q, Danish National Research Foundation, Villum Foundation, Lundbeck Foundation, and the European Commission.

  17. Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics

    SciTech Connect

    Egorov, A. Yu. Brunkov, P. N.; Nikitina, E. V.; Pirogov, E. V.; Sobolev, M. S.; Lazarenko, A. A.; Baidakova, M. V.; Kirilenko, D. A.; Konnikov, S. G.

    2014-12-15

    Advances in the production technology of multiperiod nanoheterostructures of quantum-cascade lasers with 60 cascades by molecular-beam epitaxy (MBE) on an industrial multiple-substrate MBE machine are discussed. The results obtained in studying the nanoheterostructures of quantum-cascade lasers by transmission electron microscopy, high-resolution X-ray diffraction analysis, and photoluminescence mapping are presented.

  18. Really Hot Stars

    NASA Astrophysics Data System (ADS)

    2003-04-01

    Spectacular VLT Photos Unveil Mysterious Nebulae Summary Quite a few of the most beautiful objects in the Universe are still shrouded in mystery. Even though most of the nebulae of gas and dust in our vicinity are now rather well understood, there are some which continue to puzzle astronomers. This is the case of a small number of unusual nebulae that appear to be the subject of strong heating - in astronomical terminology, they present an amazingly "high degree of excitation". This is because they contain significant amounts of ions, i.e., atoms that have lost one or more of their electrons. Depending on the atoms involved and the number of electrons lost, this process bears witness to the strength of the radiation or to the impact of energetic particles. But what are the sources of that excitation? Could it be energetic stars or perhaps some kind of exotic objects inside these nebulae? How do these peculiar objects fit into the current picture of universal evolution? New observations of a number of such unusual nebulae have recently been obtained with the Very Large Telescope (VLT) at the ESO Paranal Observatory (Chile). In a dedicated search for the origin of their individual characteristics, a team of astronomers - mostly from the Institute of Astrophysics & Geophysics in Liège (Belgium) [1] - have secured the first detailed, highly revealing images of four highly ionized nebulae in the Magellanic Clouds, two small satellite galaxies of our home galaxy, the Milky Way, only a few hundred thousand light-years away. In three nebulae, they succeeded in identifying the sources of energetic radiation and to eludicate their exceptional properties: some of the hottest, most massive stars ever seen, some of which are double. With masses of more than 20 times that of the Sun and surface temperatures above 90 000 degrees, these stars are truly extreme. PR Photo 09a/03: Nebula around the hot star AB7 in the SMC. PR Photo 09b/03: Nebula near the hot Wolf-Rayet star BAT99

  19. Head-on Quenching of a Non-premixed Flame by an Inert Wall

    NASA Astrophysics Data System (ADS)

    Bharadwaj, Nidheesh

    2005-11-01

    The quenching characteristics of a nonpremixed flame interacting with a wall have been studied via DNS. The vortex ring is generated by a brief discharge of cold methane fuel into hot air. The ignition of the vortex ring is controlled by adjusting the air temperature. The methane combustion has been modeled using detailed kinetic model GRI3.0. The flame is propelled in the axial direction by the ring induced velocity, and interacts head on with a chemically inert isothermal wall. Two wall conditions are examined, one with and one without a thermal boundary layer. The strength of the flame prior to its interaction with the wall is controlled by varying the distance of the wall from the inlet boundary. The effect of the wall on the heat release rate and the structure of the flame is studied. As the flame approaches the wall the magnitudes of vortex ring induced strain rates acting on the flame increase and the maximum wall heat flux occurs on the centerline. It is found that the increase in the strain rates affects the flame power significantly if there is no thermal boundary layer at the wall. Nondimensional wall heat flux, Peclet number, flame structure and near wall reaction mechanisms have been investigated for front flame quenching. For runs with thermal boundary layer, heat released from HO2 reactions is found to be the major contributor to heat flux at the wall.

  20. On the density of states of disordered epitaxial graphene

    SciTech Connect

    Davydov, S. Yu.

    2015-05-15

    The study is concerned with two types of disordered epitaxial graphene: (i) graphene with randomly located carbon vacancies and (ii) structurally amorphous graphene. The former type is considered in the coherent potential approximation, and for the latter type, a model of the density of states is proposed. The effects of two types of substrates, specifically, metal and semiconductor substrates are taken into account. The specific features of the density of states of epitaxial graphene at the Dirac point and the edges of the continuous spectrum are analyzed. It is shown that vacancies in epitaxial graphene formed on the metal substrate bring about logarithmic nulling of the density of states of graphene at the Dirac point and the edges of the continuous spectrum. If the Dirac point corresponds to the middle of the band gap of the semiconductor substrate, the linear trend of the density of states to zero in the vicinity of the Dirac point in defect-free graphene transforms into a logarithmic decrease in the presence of vacancies. In both cases, the graphene-substrate interaction is assumed to be weak (quasi-free graphene). In the study of amorphous epitaxial graphene, a simple model of free amorphous graphene is proposed as the initial model, in which account is taken of the nonzero density of states at the Dirac point, and then the interaction of the graphene sheet with the substrate is taken into consideration. It is shown that, near the Dirac point, the quadratic behavior of the density of states of free amorphous graphene transforms into a linear dependence for amorphous epitaxial graphene. In the study, the density of states of free graphene corresponds to the low-energy approximation of the electron spectrum.

  1. Swift thermal steering of domain walls in ferromagnetic MnBi stripes.

    PubMed

    Sukhov, Alexander; Chotorlishvili, Levan; Ernst, Arthur; Zubizarreta, Xabier; Ostanin, Sergey; Mertig, Ingrid; Gross, Eberhard K U; Berakdar, Jamal

    2016-01-01

    We predict a fast domain wall (DW) motion induced by a thermal gradient across a nanoscopic ferromagnetic stripe of MnBi. The driving mechanism is an exchange torque fueled by magnon accumulation at the DWs. Depending on the thickness of the sample, both hot-to-cold and cold-to-hot DW motion directions are possible. The finding unveils an energy efficient way to manipulate DWs as an essential element in magnetic information processing such as racetrack memory. PMID:27076097

  2. Swift thermal steering of domain walls in ferromagnetic MnBi stripes

    PubMed Central

    Sukhov, Alexander; Chotorlishvili, Levan; Ernst, Arthur; Zubizarreta, Xabier; Ostanin, Sergey; Mertig, Ingrid; Gross, Eberhard K. U.; Berakdar, Jamal

    2016-01-01

    We predict a fast domain wall (DW) motion induced by a thermal gradient across a nanoscopic ferromagnetic stripe of MnBi. The driving mechanism is an exchange torque fueled by magnon accumulation at the DWs. Depending on the thickness of the sample, both hot-to-cold and cold-to-hot DW motion directions are possible. The finding unveils an energy efficient way to manipulate DWs as an essential element in magnetic information processing such as racetrack memory. PMID:27076097

  3. A Tunable Magnetic Domain Wall Conduit Regulating Nanoparticle Diffusion.

    PubMed

    Tierno, Pietro; Johansen, Tom H; Sancho, José M

    2016-08-10

    We demonstrate a general and robust method to confine on a plane strongly diffusing nanoparticles in water by using size tunable magnetic channels. These virtual conduits are realized with pairs of movable Bloch walls located within an epitaxially grown ferrite garnet film. We show that once inside the magnetic conduit the particles experience an effective local parabolic potential in the transverse direction, while freely diffusing along the conduit. The stiffness of the magnetic potential is determined as a function of field amplitude that varies the width of the magnetic channel. Precise control of the degree of confinement is demonstrated by tuning the applied field. The magnetic conduit is then used to realize single files of nonpassing particles and to induce periodic condensation of an ensemble of particles into parallel stripes in a completely controllable and reversible manner.

  4. A Tunable Magnetic Domain Wall Conduit Regulating Nanoparticle Diffusion.

    PubMed

    Tierno, Pietro; Johansen, Tom H; Sancho, José M

    2016-08-10

    We demonstrate a general and robust method to confine on a plane strongly diffusing nanoparticles in water by using size tunable magnetic channels. These virtual conduits are realized with pairs of movable Bloch walls located within an epitaxially grown ferrite garnet film. We show that once inside the magnetic conduit the particles experience an effective local parabolic potential in the transverse direction, while freely diffusing along the conduit. The stiffness of the magnetic potential is determined as a function of field amplitude that varies the width of the magnetic channel. Precise control of the degree of confinement is demonstrated by tuning the applied field. The magnetic conduit is then used to realize single files of nonpassing particles and to induce periodic condensation of an ensemble of particles into parallel stripes in a completely controllable and reversible manner. PMID:27434042

  5. Solutions for Hot Situations

    NASA Technical Reports Server (NTRS)

    2003-01-01

    From the company that brought the world an integral heating and cooling food service system after originally developing it for NASA's Apollo Program, comes yet another orbital offshoot: a product that can be as thin as paper and as strong as steel. Nextel Ceramic Textiles and Composites from 3M Company offer space-age protection and innovative solutions for hot situations, ranging from NASA to NASCAR. With superior thermal protection, Nextel fabrics, tape, and sleevings outperform other high temperature textiles such as aramids, carbon, glass, and quartz, permitting engineers and manufacturers to handle applications up to 2,500 F (1,371 C). The stiffness and strength of Nextel Continuous Ceramic Fibers make them a great match for improving the rigidity of aluminum in metal matrix composites. Moreover, the fibers demonstrate low shrinkage at operating temperatures, which allow for the manufacturing of a dimensionally stable product. These novel fibers also offer excellent chemical resistance, low thermal conductivity, thermal shock resistance, low porosity, and unique electrical properties.

  6. Hot Hydrogen Test Facility

    SciTech Connect

    W. David Swank

    2007-02-01

    The core in a nuclear thermal rocket will operate at high temperatures and in hydrogen. One of the important parameters in evaluating the performance of a nuclear thermal rocket is specific impulse, ISp. This quantity is proportional to the square root of the propellant’s absolute temperature and inversely proportional to square root of its molecular weight. Therefore, high temperature hydrogen is a favored propellant of nuclear thermal rocket designers. Previous work has shown that one of the life-limiting phenomena for thermal rocket nuclear cores is mass loss of fuel to flowing hydrogen at high temperatures. The hot hydrogen test facility located at the Idaho National Lab (INL) is designed to test suitability of different core materials in 2500°C hydrogen flowing at 1500 liters per minute. The facility is intended to test non-uranium containing materials and therefore is particularly suited for testing potential cladding and coating materials. In this first installment the facility is described. Automated Data acquisition, flow and temperature control, vessel compatibility with various core geometries and overall capabilities are discussed.

  7. Hot Hydrogen Test Facility

    SciTech Connect

    Swank, W. David; Carmack, Jon; Werner, James E.; Pink, Robert J.; Haggard, DeLon C.; Johnson, Ryan

    2007-01-30

    The core in a nuclear thermal rocket will operate at high temperatures and in hydrogen. One of the important parameters in evaluating the performance of a nuclear thermal rocket is specific impulse, ISP. This quantity is proportional to the square root of the propellant's absolute temperature and inversely proportional to square root of its molecular weight. Therefore, high temperature hydrogen is a favored propellant of nuclear thermal rocket designers. Previous work has shown that one of the life-limiting phenomena for thermal rocket nuclear cores is mass loss of fuel to flowing hydrogen at high temperatures. The hot hydrogen test facility located at the Idaho National Lab (INL) is designed to test suitability of different core materials in 2500 deg. C hydrogen flowing at 1500 liters per minute. The facility is intended to test low activity uranium containing materials but is also suited for testing cladding and coating materials. In this first installment the facility is described. Automated data acquisition, flow and temperature control, vessel compatibility with various core geometries and overall capabilities are discussed.

  8. Saturn's Hot Spot

    NASA Technical Reports Server (NTRS)

    2005-01-01

    This is the sharpest image of Saturn's temperature emissions taken from the ground; it is a mosaic of 35 individual exposures made at the W.M. Keck I Observatory, Mauna Kea, Hawaii on Feb. 4, 2004.

    The images to create this mosaic were taken with infrared radiation. The mosaic was taken at a wavelength near 17.65 microns and is sensitive to temperatures in Saturn's upper troposphere. The prominent hot spot at the bottom of the image is right at Saturn's south pole. The warming of the southern hemisphere was expected, as Saturn was just past southern summer solstice, but the abrupt changes in temperature with latitude were not expected. The tropospheric temperature increases toward the pole abruptly near 70 degrees latitude from 88 to 89 Kelvin (-301 to -299 degrees Fahrenheit) and then to 91 Kelvin (-296 degrees Fahrenheit) right at the pole.

    Ring particles are not at a uniform temperature everywhere in their orbit around Saturn. The ring particles are orbiting clockwise in this image. Particles are coldest just after having cooled down in Saturn's shadow (lower left). As they orbit Saturn, the particles increase in temperature up to a maximum (lower right) just before passing behind Saturn again in shadow.

    A small section of the ring image is missing because of incomplete mosaic coverage during the observing sequence.

  9. Really Hot Stars

    NASA Astrophysics Data System (ADS)

    2003-04-01

    Spectacular VLT Photos Unveil Mysterious Nebulae Summary Quite a few of the most beautiful objects in the Universe are still shrouded in mystery. Even though most of the nebulae of gas and dust in our vicinity are now rather well understood, there are some which continue to puzzle astronomers. This is the case of a small number of unusual nebulae that appear to be the subject of strong heating - in astronomical terminology, they present an amazingly "high degree of excitation". This is because they contain significant amounts of ions, i.e., atoms that have lost one or more of their electrons. Depending on the atoms involved and the number of electrons lost, this process bears witness to the strength of the radiation or to the impact of energetic particles. But what are the sources of that excitation? Could it be energetic stars or perhaps some kind of exotic objects inside these nebulae? How do these peculiar objects fit into the current picture of universal evolution? New observations of a number of such unusual nebulae have recently been obtained with the Very Large Telescope (VLT) at the ESO Paranal Observatory (Chile). In a dedicated search for the origin of their individual characteristics, a team of astronomers - mostly from the Institute of Astrophysics & Geophysics in Liège (Belgium) [1] - have secured the first detailed, highly revealing images of four highly ionized nebulae in the Magellanic Clouds, two small satellite galaxies of our home galaxy, the Milky Way, only a few hundred thousand light-years away. In three nebulae, they succeeded in identifying the sources of energetic radiation and to eludicate their exceptional properties: some of the hottest, most massive stars ever seen, some of which are double. With masses of more than 20 times that of the Sun and surface temperatures above 90 000 degrees, these stars are truly extreme. PR Photo 09a/03: Nebula around the hot star AB7 in the SMC. PR Photo 09b/03: Nebula near the hot Wolf-Rayet star BAT99

  10. Neptune's 'Hot' South Pole

    NASA Technical Reports Server (NTRS)

    2007-01-01

    These thermal images show a 'hot' south pole on the planet Neptune. These warmer temperatures provide an avenue for methane to escape out of the deep atmosphere.

    The images were obtained with the Very Large Telescope in Chile, using an imager/spectrometer for mid-infrared wavelengths on Sept. 1 and 2, 2006. The telescope is operated by the European Organization for Astronomical Research in the Southern Hemisphere (known as ESO).

    Scientists say Neptune's south pole is 'hotter' than anywhere else on the planet by about 10 degrees Celsius (50 degrees Fahrenheit). The average temperature on Neptune is about minus 200 degrees Celsius (minus 392 degrees Fahrenheit).

    The upper left image samples temperatures near the top of Neptune's troposphere (near 100 millibar pressure, which is one-tenth the Earth atmospheric pressure at sea level). The hottest temperatures are indicated at the lower part of the image, at Neptune's south pole (see the graphic at the upper right). The lower two images, taken 6.3 hours apart, sample temperatures at higher altitudes in Neptune's stratosphere. They do show generally warmer temperatures near, but not at, the south pole. They also show a distinct warm area which can be seen in the lower left image and rotated completely around the back of the planet and returned to the earth-facing hemisphere in the lower right image.

  11. Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha

    SciTech Connect

    Lim, Chong Wee; Shin, Chan Soo; Gall, Daniel; Petrov, Ivan Georgiev; Greene, Joseph E.

    2004-09-28

    A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.

  12. Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

    SciTech Connect

    Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

    2013-02-19

    There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

  13. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

    DOE PAGESBeta

    Yu, Yifei; Hu, Shi; Su, Liqin; Huang, Lujun; Liu, Yi; Jin, Zhenghe; Puretzky, Alexander A.; Geohegan, David B.; Kim, Ki Wook; Zhang, Yong; et al

    2014-12-03

    Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of themore » two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.« less

  14. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

    SciTech Connect

    Yu, Yifei; Hu, Shi; Su, Liqin; Huang, Lujun; Liu, Yi; Jin, Zhenghe; Puretzky, Alexander A.; Geohegan, David B.; Kim, Ki Wook; Zhang, Yong; Cao, Linyou

    2014-12-03

    Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of the two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.

  15. Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

    DOEpatents

    Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

    2015-01-06

    There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

  16. Techniques for hot structures testing

    NASA Technical Reports Server (NTRS)

    Deangelis, V. Michael; Fields, Roger A.

    1990-01-01

    Hot structures testing have been going on since the early 1960's beginning with the Mach 6, X-15 airplane. Early hot structures test programs at NASA-Ames-Dryden focused on operational testing required to support the X-15 flight test program, and early hot structures research projects focused on developing lab test techniques to simulate flight thermal profiles. More recent efforts involved numerous large and small hot structures test programs that served to develop test methods and measurement techniques to provide data that promoted the correlation of test data with results from analytical codes. In Nov. 1988 a workshop was sponsored that focused on the correlation of hot structures test data with analysis. Limited material is drawn from the workshop and a more formal documentation is provided of topics that focus on hot structures test techniques used at NASA-Ames-Dryden. Topics covered include the data acquisition and control of testing, the quartz lamp heater systems, current strain and temperature sensors, and hot structures test techniques used to simulate the flight thermal environment in the lab.

  17. A School without Walls.

    ERIC Educational Resources Information Center

    Venuti, Len Tai

    1994-01-01

    During the summer, selected students of Hawaiian ancestry who have completed seventh or eighth grade participate in a boarding program with outdoor activities such as pulling taro, star gazing, and camping. The activities eliminate walls of doubt and fear and nurture self-confidence, creativity, personal growth, leadership, and cultural awareness.…

  18. Wall turbulence control

    NASA Technical Reports Server (NTRS)

    Wilkinson, Stephen P.; Lindemann, A. Margrethe; Beeler, George B.; Mcginley, Catherine B.; Goodman, Wesley L.; Balasubramanian, R.

    1986-01-01

    A variety of wall turbulence control devices which were experimentally investigated are discussed; these include devices for burst control, alteration of outer flow structures, large eddy substitution, increased heat transfer efficiency, and reduction of wall pressure fluctuations. Control of pre-burst flow was demonstrated with a single, traveling surface depression which is phase-locked to elements of the burst production process. Another approach to wall turbulence control is to interfere with the outer layer coherent structures. A device in the outer part of a boundary layer was shown to suppress turbulence and reduce drag by opposing both the mean and unsteady vorticity in the boundary layer. Large eddy substitution is a method in which streamline curvature is introduced into the boundary layer in the form of streamwise vortices. Riblets, which were already shown to reduce turbulent drag, were also shown to exhibit superior heat transfer characteristics. Heat transfer efficiency as measured by the Reynolds Analogy Factor was shown to be as much as 36 percent greater than a smooth flat plate in a turbulent boundary layer. Large Eddy Break-Up (LEBU) which are also known to reduce turbulent drag were shown to reduce turbulent wall pressure fluctuation.

  19. The Wall Coverings Challenge

    ERIC Educational Resources Information Center

    Roman, Harry T.

    2012-01-01

    Students love nothing better than personalizing their space--desk, bedroom, or even their cars. This article describes a classroom challenge that gives students a chance to let their spirits soar with the invention of a new form of wall treatment. A trip to a big box store might prove to be most helpful for students to visualize their new product…

  20. Fly on the Wall

    ERIC Educational Resources Information Center

    Berry, Dave; Korpan, Cynthia

    2009-01-01

    This paper describes the implementation of a peer observation program at the University of Victoria called the Lecture Club. The observers are not interactive during the class--they are the proverbial flies on the wall. The paper identifies the program as self-developmental, discussing the attributes of this learning-to-teach and peer-sharing…

  1. A Wall of Faces

    ERIC Educational Resources Information Center

    Stevens, Lori

    2008-01-01

    Visitors to the campus of Orland High School (OHS) will never question that they have stepped into a world of the masses: kids, activity, personalities, busyness, and playfulness--a veritable cloud of mild bedlam. The wall of ceramic faces that greets a visitor in the school office is another reminder of the organized chaos that the teachers…

  2. Theoretical Modelling of Hot Stars

    NASA Astrophysics Data System (ADS)

    Najarro, F.; Hillier, D. J.; Figer, D. F.; Geballe, T. R.

    1999-06-01

    Recent progress towards model atmospheres for hot stars is discussed. A new generation of NLTE wind blanketed models, together with high S/N spectra of the hot star population in the central parsec, which are currently being obtained, will allow metal abundance determinations (Fe, Si, Mg, Na, etc). Metallicity studies of hot stars in the IR will provide major constraints not only on the theory of evolution of massive stars but also on our efforts to solve the puzzle of the central parsecs of the Galaxy. Preliminary results suggest that the metallicity of the Pistol Star is 3 times solar, thus indicating strong chemical enrichment of the gas in the Galactic Center.

  3. Hot dry rock reservoir engineering

    SciTech Connect

    Murphy, H.

    1987-01-01

    The Hot Dry Rock (HDR) concept is a simple one. Two nearly parallel wells are drilled, and hydraulic fractures are then formed to hydraulically connect the wells. Water pumped down the injection well and through the fracture system is heated by contact with the hot rock and rises to the production well. This hot fluid is passed through a heat exchanger at the surface and the extracted heat is used for direct heating or electricity generation. The cooled production fluid is then reinjected, thereby setting up a circulation loop. This paper describes the development and execution of the HDR project at Fenton Hill, New Mexico.

  4. Lateral Abdominal Wall Reconstruction

    PubMed Central

    Baumann, Donald P.; Butler, Charles E.

    2012-01-01

    Lateral abdominal wall (LAW) defects can manifest as a flank hernias, myofascial laxity/bulges, or full-thickness defects. These defects are quite different from those in the anterior abdominal wall defects and the complexity and limited surgical options make repairing the LAW a challenge for the reconstructive surgeon. LAW reconstruction requires an understanding of the anatomy, physiologic forces, and the impact of deinnervation injury to design and perform successful reconstructions of hernia, bulge, and full-thickness defects. Reconstructive strategies must be tailored to address the inguinal ligament, retroperitoneum, chest wall, and diaphragm. Operative technique must focus on stabilization of the LAW to nonyielding points of fixation at the anatomic borders of the LAW far beyond the musculofascial borders of the defect itself. Thus, hernias, bulges, and full-thickness defects are approached in a similar fashion. Mesh reinforcement is uniformly required in lateral abdominal wall reconstruction. Inlay mesh placement with overlying myofascial coverage is preferred as a first-line option as is the case in anterior abdominal wall reconstruction. However, interposition bridging repairs are often performed as the surrounding myofascial tissue precludes a dual layered closure. The decision to place bioprosthetic or prosthetic mesh depends on surgeon preference, patient comorbidities, and clinical factors of the repair. Regardless of mesh type, the overlying soft tissue must provide stable cutaneous coverage and obliteration of dead space. In cases where the fasciocutaneous flaps surrounding the defect are inadequate for closure, regional pedicled flaps or free flaps are recruited to achieve stable soft tissue coverage. PMID:23372458

  5. Effects of high source flow and high pumping speed on gas source molecular beam epitaxy / chemical beam epitaxy

    NASA Astrophysics Data System (ADS)

    McCollum, M. J.; Jackson, S. L.; Szafranek, I.; Stillman, G. E.

    1990-10-01

    We report the growth of GaAs by molecular beam epitaxy (MBE), gas source molecular beam epitaxy (GSMBE), and chemical beam epitaxy (CBE) in an epitaxial III-V reactor which features high pumping speed. The system is comprised of a modified Perkin-Elmer 430P molecular beam epitaxy system and a custom gas source panel from Emcore. The growth chamber is pumped with a 7000 1/s (He) diffusion pump (Varian VHS-10 with Monsanto Santovac 5 oil). The gas source panel includes pressure based flow controllers (MKS 1150) allowing triethylaluminum (TEA), triethylgallium (TEG), and trimethylindium (TMI) to be supplied without the use of hydrogen. All source lines, including arsine and phosphine, are maintained below atmospheric pressure. The high pumping speed allows total system flow rates as high as 100 SCCM and V/III ratios as high as 100. The purity of GaAs grown by MBE in this system increases with pumping speed. GaAs layers grown by GSMBE with arsine flows of 10 and 20 SCCM have electron concentrations of 1 × 10 15 cm -3 (μ 77=48,000 cm 2/V·) and 2 × 10 14 cm -3 (μ 77=78,000 cm 2/V·s) respectively. El ectron concentration varies with hydride injector temperature such that the minimum in electron concentration occurs for less than complete cracking. The effect of V/III ratio and the use of a metal eutectic bubbler on residual carrier concentration in GaAs grown by CBE is presented. Intentional Si and Be doping of CBE grown GaAs is demonstrated at a high growth rate of 5.4 μm/h.

  6. Not so hot "hot spots" in the oceanic mantle.

    PubMed

    Bonath, E

    1990-10-01

    Excess volcanism and crustal swelling associated with hot spots are generally attributed to thermal plumes upwelling from the mantle. This concept has been tested in the portion of the Mid-Atlantic Ridge between 34 degrees and 45 degrees (Azores hot spot). Peridotite and basalt data indicate that the upper mantle in the hot spot has undergone a high degree of melting relative to the mantle elsewhere in the North Atlantic. However, application of various geothermometers suggests that the temperature of equilibration of peridotites in the mantle was lower, or at least not higher, in the hot spot than elsewhere. The presence of H(2)O-rich metasomatized mantle domains, inferred from peridotite and basalt data, would lower the melting temperature of the hot spot mantle and thereby reconcile its high degree ofmelting with the lack of a mantle temperature anomaly. Thus, some so-called hot spots might be melting anomalies unrelated to abnormally high mantle temperature or thermal plumes. PMID:17808242

  7. A&M. TAN607. Special service cubicle (hot cell). Details include Zpipe ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. TAN-607. Special service cubicle (hot cell). Details include Z-pipe and stepped plug penetrations through shielding wall. Ralph M. Parsons 902-3-ANP-607-A116. Date: December 1952. Approved by INEEL Classification Office for public release. INEEL index code no. 034-0607-693-106767 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  8. CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CPP640) LOOKING NORTHEAST ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CPP-640) LOOKING NORTHEAST SHOWING OVERALL BLOCK EXTERIOR WALLS; CONSTRUCTION 65 PERCENT COMPLETE. INL PHOTO NUMBER NRTS-60-4976. Holmes, Photographer, 9/26/1960 - Idaho National Engineering Laboratory, Idaho Chemical Processing Plant, Fuel Reprocessing Complex, Scoville, Butte County, ID

  9. CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CPP640) LOOKING NORTHWEST, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CPP-640) LOOKING NORTHWEST, SHOWING FORMING FOR NORTH WALLS OF CELLS 1, 4 AND 5; CONSTRUCTION 21 PERCENT COMPLETE. INL PHOTO NUMBER NRTS-60-1874. Holmes, Photographer, 4/21/1960 - Idaho National Engineering Laboratory, Idaho Chemical Processing Plant, Fuel Reprocessing Complex, Scoville, Butte County, ID

  10. A&M. Hot cell annex (TAN633). Camera facing east. Construction view ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. Hot cell annex (TAN-633). Camera facing east. Construction view of north and west walls. Photographer: Jack L. Anderson. Date: October 23, 1957. INEEL negative no. 57-5336 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  11. A&M. Hot cell annex (TAN633) contextual view also showing east ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. Hot cell annex (TAN-633) contextual view also showing east facade. Camera facing west. Note corridor connecting annex to pool area of TAN-607. Pumice block walls. Date: March 2004. INEEL negative no. HD-39-2-2 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  12. A&M. Hot liquid waste treatment building (TAN616). Camera facing northeast. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. Hot liquid waste treatment building (TAN-616). Camera facing northeast. South wall with oblique views of west sides of structure. Photographer: Ron Paarmann. Date: September 22, 1997. INEEL negative no. HD-20-1-2 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  13. A&M. Hot liquid waste treatment building (TAN616), south side. Camera ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. Hot liquid waste treatment building (TAN-616), south side. Camera facing north. Personnel door at left side of wall. Partial view of outdoor stairway to upper level platform. Note concrete construction. Photographer: Ron Paarmann. Date: September 22, 1997. INEEL negative no. HD-20-1-3 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  14. Edge Plasma Analysis for Liquid-wall MFE Concepts

    SciTech Connect

    Moir, R W; Rensink, M; Rognlien, T D

    2000-09-21

    A thick flowing layer of liquid (e.g., flibe-a molten salt, or Sn{sub 80}Li{sub 20}--a liquid metal) protects the structural walls of the magnetic fusion configuration so that they can last the life of the plant even with intense 14 MeV neutron bombardment from the D-T fusion reaction, The surface temperature of the liquid rises as it passes from the inlet nozzles to the exit nozzles due to absorption of line and bremsstrahlung radiation, and neutrons. The surface temperature can be reduced by enhanced turbulent convection of hot surface liquid into the cooler interior. This surface temperature is affected by the temperature of liquid from a heat transport and energy recovery system. The evaporative flux from the wall driven by the surface temperature must also result in an acceptable impurity level in the core plasma. The shielding of the core by the edge plasma is modeled with a 2D-transport code for the DT and impurity ions; these impurity ions are either swept out to the divertor, or diffuse to the hot plasma core. An auxiliary plasma between the edge plasma and the liquid wall may further attenuate evaporating flux of atoms and molecules by ionization near the wall.

  15. Moisture Research - Optimizing Wall Assemblies

    SciTech Connect

    Arena, Lois; Mantha, Pallavi

    2013-05-01

    In this project, the Consortium for Advanced Residential Buildings (CARB) team evaluated several different configurations of wall assemblies to determine the accuracy of moisture modeling and make recommendations to ensure durable, efficient assemblies. WUFI and THERM were used to model the hygrothermal and heat transfer characteristics of these walls. Wall assemblies evaluated included code minimum walls using spray foam insulation and fiberglass batts, high R-value walls at least 12 in. thick (R-40 and R-60 assemblies), and brick walls with interior insulation.

  16. EAST WALL OF CRYSTALLIZER WING TO THE LEFT, END WALL ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    EAST WALL OF CRYSTALLIZER WING TO THE LEFT, END WALL OF CRUSHING MILL IN CENTER. GABLE END OF BOILING HOUSE IN LEFT BACKGROUND. VIEW FROM THE SOUTH - Kekaha Sugar Company, Sugar Mill Building, 8315 Kekaha Road, Kekaha, Kauai County, HI

  17. 4. CONSTRUCTION DETAIL, SW CORNER, SHOWING RETAINING WALL, BRIDGE WALL ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    4. CONSTRUCTION DETAIL, SW CORNER, SHOWING RETAINING WALL, BRIDGE WALL AND EROSION ON ROAD SURFACE. - Bridalveil Fall Bridge No. 3, Spanning Bridalveil Creek on carriage road, Yosemite Village, Mariposa County, CA

  18. DETAIL OF CROCKETT BARN WALL CONSTRUCTION, UPPER LEVEL. The wall ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    DETAIL OF CROCKETT BARN WALL CONSTRUCTION, UPPER LEVEL. The wall construction of the Crockett barn includes a layer of diagonal sheathing that is exposed on the interior. - Crockett Farm, Barn, 1056 Fort Casey Road, Coupeville, Island County, WA

  19. Typical Window, Interior Wall Paint Sequence, Wall Section, and Foundation ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Typical Window, Interior Wall Paint Sequence, Wall Section, and Foundation Sections - Civilian Conservation Corps (CCC) Camp NP-5-C, Barracks No. 5, CCC Camp Historic District at Chapin Mesa, Cortez, Montezuma County, CO

  20. 1. SOUTHEAST REAR WALL AND NORTHEAST SIDE WALL OF CABINS ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    1. SOUTHEAST REAR WALL AND NORTHEAST SIDE WALL OF CABINS FORGEMAN'S HOUSE NO. 1 AT RIGHT - Mount Etna Iron Works, Forgeman's House No. 1, Legislative Route 07020 between junctions of T.R. 461 & 463, Williamsburg, Blair County, PA

  1. Red-Hot Saturn

    NASA Technical Reports Server (NTRS)

    2005-01-01

    These side-by-side false-color images show Saturn's heat emission. The data were taken on Feb. 4, 2004, from the W. M. Keck I Observatory, Mauna Kea, Hawaii. Both images were taken with infrared radiation. The image on the left was taken at a wavelength near 17.65 microns and is sensitive to temperatures in Saturn's upper troposphere. The image on the right was taken at a wavelength of 8 microns and is sensitive to temperatures in Saturn's stratosphere. The prominent hot spot at the bottom of each image is at Saturn's south pole. The warming of the southern hemisphere was expected, as Saturn was just past southern summer solstice, but the abrupt changes in temperature with latitude were not expected.

    The troposphere temperature increases toward the pole abruptly near 70 degrees latitude from 88 to 89 Kelvin (-301 to -299 degrees Fahrenheit) and then to 91 Kelvin (-296 degrees Fahrenheit) right at the pole. Near 70 degrees latitude, the stratospheric temperature increases even more abruptly from 146 to 150 Kelvin (-197 to -189 degrees Fahrenheit) and then again to 151 Kelvin (-188 degrees Fahrenheit) right at the pole.

    While the rings are too faint to be detected at 8 microns (right), they show up at 17.65 microns. The ring particles are orbiting Saturn to the left on the bottom and to the right on the top. The lower left ring is colder than the lower right ring, because the particles are just moving out of Saturn's shadow where they have cooled off. As they orbit Saturn, they warm up to a maximum just before passing behind Saturn again in shadow.

  2. Spontaneous formation of GaN/AlN core-shell nanowires on sapphire by hydride vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Trassoudaine, Agnès; Roche, Elissa; Bougerol, Catherine; André, Yamina; Avit, Geoffrey; Monier, Guillaume; Ramdani, Mohammed Réda; Gil, Evelyne; Castelluci, Dominique; Dubrovskii, Vladimir G.

    2016-11-01

    Spontaneous GaN/AlN core-shell nanowires with high crystal quality were synthesized on sapphire substrates by vapor-liquid-solid hydride vapor phase epitaxy (VLS-HVPE) without any voluntary aluminum source. Deposition of aluminum is difficult to achieve in this growth technique which uses metal-chloride gaseous precursors: the strong interaction between the AlCl gaseous molecules and the quartz reactor yields a huge parasitic nucleation on the walls of the reactor upstream the substrate. We open up an innovative method to produce GaN/AlN structures by HVPE, thanks to aluminum etching from the sapphire substrate followed by redeposition onto the sidewalls of the GaN core. The paper presents the structural characterization of GaN/AlN core-shell nanowires, speculates on the growth mechanism and discusses a model which describes this unexpected behavior.

  3. Temperature dependence of multi-jump magnetic switching process in epitaxial Fe/MgO (001) films

    NASA Astrophysics Data System (ADS)

    Hu, Bo; He, Wei; Ye, Jun; Tang, Jin; Zhang, Yong-Sheng; Sheraz, Ahmad Syed; Zhang, Xiang-Qun; Cheng, Zhao-Hua

    2015-07-01

    Temperature dependence of magnetic switching processes with multiple jumps in Fe/MgO (001) films is investigated by magnetoresistance measurements. When the temperature decreases from 300 K to 80 K, the measured three-jump hysteresis loops turn into two-jump loops. The temperature dependence of the fourfold in-plane magnetic anisotropy constant K1, domain wall pinning energy, and an additional uniaxial magnetic anisotropy constant KU are responsible for this transformation. The strengths of K1 and domain wall pinning energy increase with decreasing temperature, but KU remains unchanged. Moreover, magnetization reversal mechanisms, with either two successive or two separate 90° domain wall propagation, are introduced to explain the multi-jump magnetic switching process in epitaxial Fe/MgO(001) films at different temperatures. Project supported by the National Basic Research Program of China (Grant Nos. 2015CB921403, 2011CB921801, and 2012CB933102) and the National Natural Science Foundation of China (Grant Nos. 51427801, 11374350, and 11274361).

  4. Rapid Fabrication Techniques for Liquid Rocket Channel Wall Nozzles

    NASA Technical Reports Server (NTRS)

    Gradl, Paul R.

    2016-01-01

    The functions of a regeneratively-cooled nozzle are to (1) expand combustion gases to increase exhaust gas velocity while, (2) maintaining adequate wall temperatures to prevent structural failure, and (3) transfer heat from the hot gases to the coolant fluid to promote injector performance and stability. Regeneratively-cooled nozzles are grouped into two categories: tube-wall nozzles and channel wall nozzles. A channel wall nozzle is designed with an internal liner containing a series of integral coolant channels that are closed out with an external jacket. Manifolds are attached at each end of the nozzle to distribute coolant to and away from the channels. A variety of manufacturing techniques have been explored for channel wall nozzles, including state of the art laser-welded closeouts and pressure-assisted braze closeouts. This paper discusses techniques that NASA MSFC is evaluating for rapid fabrication of channel wall nozzles that address liner fabrication, slotting techniques and liner closeout techniques. Techniques being evaluated for liner fabrication include large-scale additive manufacturing of freeform-deposition structures to create the liner blanks. Abrasive water jet milling is being evaluated for cutting the complex coolant channel geometries. Techniques being considered for rapid closeout of the slotted liners include freeform deposition, explosive bonding and Cold Spray. Each of these techniques, development work and results are discussed in further detail in this paper.

  5. Morpheus Lander Hot Fire Test

    NASA Video Gallery

    This video shows a successful "hot fire" test of the Morpheus lander on February 27, 2012, at the VTB Flight Complex at NASA's Johnson Space Center. The engine burns for an extended period of time ...

  6. Coulomb explosion of "hot spot"

    NASA Astrophysics Data System (ADS)

    Oreshkin, V. I.; Oreshkin, E. V.; Chaikovsky, S. A.; Artyomov, A. P.

    2016-09-01

    The study presented in this paper has shown that the generation of hard x rays and high-energy ions, which are detected in pinch implosion experiments, may be associated with the Coulomb explosion of the hot spot that is formed due to the outflow of the material from the pinch cross point. During the process of material outflow, the temperature of the hot spot plasma increases, and conditions arise for the plasma electrons to become continuously accelerated. The runaway of electrons from the hot spot region results in the buildup of positive space charge in this region followed by a Coulomb explosion. The conditions for the hot spot plasma electrons to become continuously accelerated have been revealed, and the estimates have been obtained for the kinetic energy of the ions generated by the Coulomb explosion.

  7. Fluids in micropores. V. Effects of thermal motion in the walls of a slit-micropore

    SciTech Connect

    Diestler, D.J.; Schoen, M.

    1996-05-01

    Previous articles in this series have concerned the prototypal slit-pore with {ital rigid} walls, in which a Lennard-Jones (12,6) monatomic film is constrained between two plane-parallel walls comprising like atoms fixed in the face-centered-cubic (fcc) (100) configuration. The behavior of molecularly thin films in the rigid-wall prototype is governed by the template effect, whereby solid films can form epitaxially when the walls are properly aligned in the lateral directions. In this article the influence of thermal motion of the wall atoms on the template effect is investigated. The walls are treated as Einstein solids, the atoms moving independently in harmonic potentials centered on rigidly fixed equilibrium positions in the fcc (100) configuration. The force constant {ital f}{sub {ital c}} is a measure of the stiffness of the walls, the rigid-wall limit being {ital f}{sub {ital c}}={infinity}. Formal thermodynamic and statistical mechanical analyses of the system are carried out. The results of grand canonical ensemble Monte Carlo simulations indicate that for values of {ital f}{sub {ital c}} characteristic of a soft (e.g., noble-gas) crystal dynamic coupling between wall and film has a substantial influence on such equilibrium properties as normal stress (load) and interfacial tensions. In general, the softer the walls (i.e., the smaller the value of {ital f}{sub {ital c}}), the weaker the template effect and hence the softer and more disordered the confined film. {copyright} {ital 1996 American Institute of Physics.}

  8. The physics of epitaxial graphene on SiC(0001).

    PubMed

    Kageshima, H; Hibino, H; Tanabe, S

    2012-08-01

    Various physical properties of epitaxial graphene grown on SiC(0001) are studied. First, the electronic transport in epitaxial bilayer graphene on SiC(0001) and quasi-free-standing bilayer graphene on SiC(0001) is investigated. The dependences of the resistance and the polarity of the Hall resistance at zero gate voltage on the top-gate voltage show that the carrier types are electron and hole, respectively. The mobility evaluated at various carrier densities indicates that the quasi-free-standing bilayer graphene shows higher mobility than the epitaxial bilayer graphene when they are compared at the same carrier density. The difference in mobility is thought to come from the domain size of the graphene sheet formed. To clarify a guiding principle for controlling graphene quality, the mechanism of epitaxial graphene growth is also studied theoretically. It is found that a new graphene sheet grows from the interface between the old graphene sheets and the SiC substrate. Further studies on the energetics reveal the importance of the role of the step on the SiC surface. A first-principles calculation unequivocally shows that the C prefers to release from the step edge and to aggregate as graphene nuclei along the step edge rather than be left on the terrace. It is also shown that the edges of the existing graphene more preferentially absorb the isolated C atoms. For some annealing conditions, experiments can also provide graphene islands on SiC(0001) surfaces. The atomic structures are studied theoretically together with their growth mechanism. The proposed embedded island structures actually act as a graphene island electronically, and those with zigzag edges have a magnetoelectric effect. Finally, the thermoelectric properties of graphene are theoretically examined. The results indicate that reducing the carrier scattering suppresses the thermoelectric power and enhances the thermoelectric figure of merit. The fine control of the Fermi energy position is thought to

  9. Surface morphological evolution of epitaxial CrN(001) layers

    SciTech Connect

    Frederick, J.R.; Gall, D.

    2005-09-01

    CrN layers, 57 and 230 nm thick, were grown on MgO(001) at T{sub s}=600-800 deg. C by ultrahigh-vacuum magnetron sputter deposition in pure N{sub 2} discharges from an oblique deposition angle {alpha}=80 deg. . Layers grown at 600 deg. C nucleate as single crystals with a cube-on-cube epitaxial relationship with the substrate. However, rough surfaces with cauliflower-type morphologies cause the nucleation of misoriented CrN grains that develop into cone-shaped grains that protrude out of the epitaxial matrix to form triangular faceted surface mounds. The surface morphology of epitaxial CrN(001) grown at 700 deg. C is characterized by dendritic ridge patterns extending along the orthogonal <110> directions superposed by square-shaped super mounds with <100> edges. The ridge patterns are attributed to a Bales-Zangwill instability while the supermounds form due to atomic shadowing which leads to the formation of epitaxial inverted pyramids that are separated from the surrounding layer by tilted nanovoids. Growth at 800 deg. C yields complete single crystals with smooth surfaces. The root-mean-square surface roughness for 230-nm-thick layers decreases from 18.8 to 9.3 to 1.1 nm as T{sub s} is raised from 600 to 700 to 800 deg. C. This steep decrease is due to a transition in the roughening mechanism from atomic shadowing to kinetic roughening. Atomic shadowing is dominant at 600 and 700 deg. C, where misoriented grains and supermounds, respectively, capture a larger fraction of the oblique deposition flux in comparison to the surrounding epitaxial matrix, resulting in a high roughening rate that is described by a power law with an exponent {beta}>0.5. In contrast, kinetic roughening controls the surface morphology for T{sub s}=800 deg. C, as well as the epitaxial fraction of the layers grown at 600 and 700 deg. C, yielding relatively smooth surfaces and {beta}{<=}0.27.

  10. Quantitative spectroscopy of hot stars

    NASA Technical Reports Server (NTRS)

    Kudritzki, R. P.; Hummer, D. G.

    1990-01-01

    A review on the quantitative spectroscopy (QS) of hot stars is presented, with particular attention given to the study of photospheres, optically thin winds, unified model atmospheres, and stars with optically thick winds. It is concluded that the results presented here demonstrate the reliability of Qs as a unique source of accurate values of the global parameters (effective temperature, surface gravity, and elemental abundances) of hot stars.

  11. High-R Walls for Remodeling: Wall Cavity Moisture Monitoring

    SciTech Connect

    Wiehagen, J.; Kochkin, V.

    2012-12-01

    The focus of the study is on the performance of wall systems, and in particular, the moisture characteristics inside the wall cavity and in the wood sheathing. Furthermore, while this research will initially address new home construction, the goal is to address potential moisture issues in wall cavities of existing homes when insulation and air sealing improvements are made.

  12. High-R Walls for Remodeling. Wall Cavity Moisture Monitoring

    SciTech Connect

    Wiehagen, J.; Kochkin, V.

    2012-12-01

    The focus of the study is on the performance of wall systems, and in particular, the moisture characteristics inside the wall cavity and in the wood sheathing. Furthermore, while this research will initially address new home construction, the goal is to address potential moisture issues in wall cavities of existing homes when insulation and air sealing improvements are made.

  13. 38. NORTHEAST ROOM, SECOND FLOOR, SOUTH WALL. ROOM COMPLETELY WALLED ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    38. NORTHEAST ROOM, SECOND FLOOR, SOUTH WALL. ROOM COMPLETELY WALLED WITH RANDOM WIDTH BOARDS WHICH WERE PAPERED OR PLASTERED OVER. THIS WAS TYPICAL THROUGHOUT HOUSE EXCEPT FOR WOOD PANELED WALLS - John Mark Verdier House, 801 Bay & Scott Streets, Beaufort, Beaufort County, SC

  14. 25. NORTH TRAINING WALL, EAST SECTION, SIDE WALL CONSTRUCTION, LOOKING ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    25. NORTH TRAINING WALL, EAST SECTION, SIDE WALL CONSTRUCTION, LOOKING WEST FROM A POINT ABOUT 500 FEET FROM THE MIDDLE HARBOR PARK FISHING PIER. (Panoramic view 1 of 2). - Oakland Harbor Training Walls, Mouth of Federal Channel to Inner Harbor, Oakland, Alameda County, CA

  15. Hot-electron energy relaxation time in Ga-doped ZnO films

    SciTech Connect

    Šermukšnis, E. Liberis, J.; Ramonas, M.; Matulionis, A.; Toporkov, M.; Liu, H. Y.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

    2015-02-14

    Hot-electron energy relaxation time is deduced for Ga-doped ZnO epitaxial layers from pulsed hot-electron noise measurements at room temperature. The relaxation time increases from ∼0.17 ps to ∼1.8 ps when the electron density increases from 1.4 × 10{sup 17 }cm{sup −3} to 1.3 × 10{sup 20 }cm{sup −3}. A local minimum is resolved near an electron density of 1.4 × 10{sup 19 }cm{sup −3}. The longest energy relaxation time (1.8 ps), observed at the highest electron density, is in good agreement with the published values obtained by optical time-resolved luminescence and absorption experiments. Monte Carlo simulations provide a qualitative interpretation of our observations if hot-phonon accumulation is taken into account. The local minimum of the electron energy relaxation time is explained by the ultrafast plasmon-assisted decay of hot phonons in the vicinity of the plasmon–LO-phonon resonance.

  16. Ultra-low power HOT MCT grown by MOVPE for handheld applications

    NASA Astrophysics Data System (ADS)

    Pillans, Luke; Baker, Ian; McEwen, R. Kennedy

    2014-06-01

    In 2012 Selex ES demonstrated High Operating Temperature (HOT) MCT detectors with 5μm cut-off wavelength and f/4 aperture operating at temperatures above 200K. These detectors are grown by Metal Organic Vapour Phase Epitaxy (MOVPE) which enables fine control over the photo-diode structure. Since 2012 Selex has created two further generations of MOVPE HOT MCT, progressively improving operability and yield. This paper presents performance data for Selex's third generation of HOT MCT technology and describes the improvements to the diode design and materials processing that have enabled these advances. A parallel program has developed miniature Dewars with lower heatload and reduced manufacturing costs. When integrated with the latest generation of miniature linear cryo-engines the required cooler power is reduced to the region of 1W at temperatures of 200K. This paper will present example imagery from a detector operating with <1 Watt cooler input power. The combination of third generation HOT MCT, high efficiency Dewars and miniature linear coolers will allow a drastic reduction in SWAP-C for long range hand-held thermal imagers.

  17. Investigation of cold-to-hot transfer and thermal separation zone through nano step geometries

    NASA Astrophysics Data System (ADS)

    Mahdavi, Amir-Mehran; Roohi, Ehsan

    2015-07-01

    Nanosteps form once nanochannels of various diameters connect to each other. The focus of this paper is to investigate the heat transfer and hydro/thermal field behavior in nanostep geometries using direct simulation Monte Carlo. The effects of the hydrodynamics separation on the pressure field and heat lines are reported, i.e., we show that the length of the hydrodynamics separation zone is different from the positive pressure gradient and thermal separation zones. Interestingly, cold to hot transfer is observed when the wall temperatures and inlet temperature are close to each other. We show that cold to hot heat transfer appears due to the interplay between the higher order term of the heat flux formula, which is a function of the second derivate of the velocity, with the Fourier term; the cold to hot transfer effect is omitted as the wall temperature or Knudsen number increases. In addition, the impact of different parameters, such as pressure ratio, Knudsen number, and wall temperature adjacent to the separation zone, are investigated. The dependence of the mass flow rate and the length of the separation zone on the wall temperature and the channel pressure ratio is considered. We show that Knudsen minimum is not observed in the step geometry for both isothermal and non-isothermal wall conditions.

  18. Quasi-one-dimensional domain walls in ferroelectric ceramics: Evidence from domain dynamics and wall roughness measurements

    NASA Astrophysics Data System (ADS)

    Pertsev, N. A.; Kiselev, D. A.; Bdikin, I. K.; Kosec, M.; Kholkin, A. L.

    2011-09-01

    Direct measurements of the motion of domain walls in disordered ferroelectrics provide important information on their interaction with defects, which is crucial for the functioning of various ferroelectric devices such as high-K capacitors and ferroelectric-based memories. In this work, we report on the results of the nanoscale measurements of domain-wall velocity and static domain-wall roughness in disordered (Pb,La)(Zr,Ti)O3 (PLZT) ceramics prepared by hot press sintering. Relaxation of domain walls to their equilibrium configurations at short length scales yields the apparent roughness exponent ζ ≈ 0.67 in PLZT 9.5/65/35. At the same time, the dynamical exponent μ was found to be about 0.25 from the independent measurements of domain-wall creep under local application of electric field. An analysis of these two values points to the effective dimensionality deff = 1 for the domain walls in PLZT with high La content. This result is confirmed by the layer-by-layer polishing followed by the imaging of an artificially created domain. The origin of disorder and its dependence on La concentration in PLZT solid solutions are discussed.

  19. Refrigerator with anti-sweat hot liquid loop

    SciTech Connect

    Woolley, S.J.; Cushing, D.S.; Jenkins, T.E.; Gerdes, K.W.; Sisler, R.R.

    1988-04-05

    A cabinet assembly for a refrigerator having a freezer compartment ontop with two top front corners, a fresh food compartment on the bottom, a mullion partition between the compartments and a hot liquid anti-sweat loop is described comprising; an outer sheet metal shell having a top panel, side panels and a front face, a brace located at each of the two top front corners of the cabinet and having two formed sections at right angles to each other and each section is formed as an inwardly open U-shaped channel having a base, a first leg and a second leg spaced apart and integrally joined to the base, fastening means for rigidly attaching each of the second leg of the corner braces to the flange of the third wall of the front face, and means to secure a portion of the hot liquid anti-sweat loop to the braces.

  20. The Dielectric Wall Accelerator

    SciTech Connect

    Caporaso, George J.; Chen, Yu-Jiuan; Sampayan, Stephen E.

    2009-01-01

    The Dielectric Wall Accelerator (DWA), a class of induction accelerators, employs a novel insulating beam tube to impress a longitudinal electric field on a bunch of charged particles. The surface flashover characteristics of this tube may permit the attainment of accelerating gradients on the order of 100 MV/m for accelerating pulses on the order of a nanosecond in duration. A virtual traveling wave of excitation along the tube is produced at any desired speed by controlling the timing of pulse generating modules that supply a tangential electric field to the tube wall. Because of the ability to control the speed of this virtual wave, the accelerator is capable of handling any charge to mass ratio particle; hence it can be used for electrons, protons and any ion. The accelerator architectures, key technologies and development challenges will be described.

  1. Investigation on the electron flux to the wall in the VENUS ion source

    NASA Astrophysics Data System (ADS)

    Thuillier, T.; Angot, J.; Benitez, J. Y.; Hodgkinson, A.; Lyneis, C. M.; Todd, D. S.; Xie, D. Z.

    2016-02-01

    The long-term operation of high charge state electron cyclotron resonance ion sources fed with high microwave power has caused damage to the plasma chamber wall in several laboratories. Porosity, or a small hole, can be progressively created in the chamber wall which can destroy the plasma chamber over a few year time scale. A burnout of the VENUS plasma chamber is investigated in which the hole formation in relation to the local hot electron power density is studied. First, the results of a simple model assuming that hot electrons are fully magnetized and strictly following magnetic field lines are presented. The model qualitatively reproduces the experimental traces left by the plasma on the wall. However, it is too crude to reproduce the localized electron power density for creating a hole in the chamber wall. Second, the results of a Monte Carlo simulation, following a population of scattering hot electrons, indicate a localized high power deposited to the chamber wall consistent with the hole formation process. Finally, a hypervapotron cooling scheme is proposed to mitigate the hole formation in electron cyclotron resonance plasma chamber wall.

  2. Investigation on the electron flux to the wall in the VENUS ion source.

    PubMed

    Thuillier, T; Angot, J; Benitez, J Y; Hodgkinson, A; Lyneis, C M; Todd, D S; Xie, D Z

    2016-02-01

    The long-term operation of high charge state electron cyclotron resonance ion sources fed with high microwave power has caused damage to the plasma chamber wall in several laboratories. Porosity, or a small hole, can be progressively created in the chamber wall which can destroy the plasma chamber over a few year time scale. A burnout of the VENUS plasma chamber is investigated in which the hole formation in relation to the local hot electron power density is studied. First, the results of a simple model assuming that hot electrons are fully magnetized and strictly following magnetic field lines are presented. The model qualitatively reproduces the experimental traces left by the plasma on the wall. However, it is too crude to reproduce the localized electron power density for creating a hole in the chamber wall. Second, the results of a Monte Carlo simulation, following a population of scattering hot electrons, indicate a localized high power deposited to the chamber wall consistent with the hole formation process. Finally, a hypervapotron cooling scheme is proposed to mitigate the hole formation in electron cyclotron resonance plasma chamber wall. PMID:26931954

  3. Investigation on the electron flux to the wall in the VENUS ion source.

    PubMed

    Thuillier, T; Angot, J; Benitez, J Y; Hodgkinson, A; Lyneis, C M; Todd, D S; Xie, D Z

    2016-02-01

    The long-term operation of high charge state electron cyclotron resonance ion sources fed with high microwave power has caused damage to the plasma chamber wall in several laboratories. Porosity, or a small hole, can be progressively created in the chamber wall which can destroy the plasma chamber over a few year time scale. A burnout of the VENUS plasma chamber is investigated in which the hole formation in relation to the local hot electron power density is studied. First, the results of a simple model assuming that hot electrons are fully magnetized and strictly following magnetic field lines are presented. The model qualitatively reproduces the experimental traces left by the plasma on the wall. However, it is too crude to reproduce the localized electron power density for creating a hole in the chamber wall. Second, the results of a Monte Carlo simulation, following a population of scattering hot electrons, indicate a localized high power deposited to the chamber wall consistent with the hole formation process. Finally, a hypervapotron cooling scheme is proposed to mitigate the hole formation in electron cyclotron resonance plasma chamber wall.

  4. Hot on the inside.

    PubMed

    Weinmann, Michael

    2003-07-01

    When a disease process becomes life-threatening, it is termed to be malignant. Hyperthermia is a heat illness that arises from one of two basic causes: 1) the body's normal thermoregulatory mechanisms are overwhelmed by the environment (an exogenous heat load) or, more commonly, by excessive exercise in a moderate-to-extreme environment (an endogenous heat load); or 2) failure of the thermoregulatory mechanisms, such as those encountered in the elderly or debilitated patient. Either cause can lead to heat illnesses such as heat cramps, heat exhaustion or heatstroke. Heat cramps are brief, intermittent and often severe muscular cramps that frequently occur in muscles fatigued by heavy work or exercise. They are believed to be caused by a rapid change in the extracellular fluid osmolarity resulting from sodium and water loss. Heat exhaustion is a more severe form of heat illness characterized by minor changes in mental status (poor judgment, irritability), dizziness, nausea and headache. In severe cases, the patient may have an altered LOC. Just as with heat cramps, profuse sweating is present. Removing the patient from the hot environment and administering fluids will usually result in a rapid recovery. [table: see text] Left untreated, heat exhaustion may progress to heatstroke. Heatstroke results when there is a complete collapse of thermoregulatory mechanisms. This will lead to a rise in body core temperature in excess of 105.8 degrees F (41 degrees C), which will produce multisystem tissue damage and physiological collapse. Severe cases can cause death. The patient in this case had an axillary temperature taken and recorded at 101.4 degrees F. Typically, axillary temperatures are one degree cooler than oral temperatures, which are one degree cooler than core temperatures. This patient, then, had a core temperature of 103 degrees F or higher. There are two types of heatstroke: classic and exertional. Classic heatstroke occurs during periods of sustained high

  5. Bumper wall for plasma device

    DOEpatents

    Coultas, Thomas A.

    1977-01-01

    Operation of a plasma device such as a reactor for controlled thermonuclear fusion is facilitated by an improved bumper wall enclosing the plasma to smooth the flow of energy from the plasma as the energy impinges upon the bumper wall. The bumper wall is flexible to withstand unequal and severe thermal shocks and it is readily replaced at less expense than the cost of replacing structural material in the first wall and blanket that surround it.

  6. Magnetic domain wall manipulation in (Ga,Mn)As nanostructures for spintronic applications

    SciTech Connect

    Wosinski, Tadeusz; Andrearczyk, Tomasz; Figielski, Tadeusz; Olender, Karolina; Wrobel, Jerzy

    2014-02-21

    Ring-shaped nanostructures have been designed and fabricated by electron-beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As. The nanostructures, in a form of planar rings with a slit, were supplied with four electrical terminals and subjected to magneto-transport studies under planar weak magnetic field. Magnetoresistive effects caused by manipulation of magnetic domain walls and magnetization reversal in the nanostructures have been investigated and possible applications of the nanostructures as four-terminal spintronic devices are discussed.

  7. Room temperature continuous wave operation of quantum cascade lasers with 12.5% wall plug efficiency

    SciTech Connect

    Bai, Y.; Slivken, S.; Darvish, S. R.; Razeghi, M.

    2008-07-14

    An InP based quantum cascade laser heterostructure emitting at 4.6 {mu}m was grown with gas-source molecular beam epitaxy. The wafer was processed into a conventional double-channel ridge waveguide geometry with ridge widths of 19.7 and 10.6 {mu}m without semi-insulating InP regrowth. An uncoated, narrow ridge device with a 4.8 mm cavity length was epilayer down bonded to a diamond submount and exhibits 2.5 W maximum output power with a wall plug efficiency of 12.5% at room temperature in continuous wave operation.

  8. Thermal Stress in HFEF Hot Cell Windows Due to an In-Cell Metal Fire

    SciTech Connect

    Solbrig, Charles W.; Warmann, Stephen A.

    2016-01-01

    This work investigates an accident during the pyrochemical extraction of Uranium and Plutonium from PWR spent fuel in an argon atmosphere hot cell. In the accident, the heavy metals (U and Pu) being extracted are accidentally exposed to air from a leaky instrument penetration which goes through the cell walls. The extracted pin size pieces of U and Pu metal readily burn when exposed to air. Technicians perform the electrochemical extraction using manipulators through a 4 foot thick hot cell concrete wall which protects them from the radioactivity of the spent fuel. Four foot thick windows placed in the wall allow the technicians to visually control the manipulators. These windows would be exposed to the heat of the metal fire. As a result, this analysis determines if the thermal stress caused by the fire would crack the windows and if the heat would degrade the window seals allowing radioactivity to escape from the cell.

  9. Magnetism and epitaxy in Lu/Dy/Lu trilayers

    NASA Astrophysics Data System (ADS)

    Beach, R. S.; Matheny, A.; Salamon, M. B.; Flynn, C. P.; Borchers, J. A.; Erwin, R. W.; Rhyne, J. J.

    1993-05-01

    Thin dysprosium c-axis films (40-400 Å) were grown coherently between 500-Å lutetium layers by molecular beam epitaxy. Bulk magnetization measurements show that these sandwich structures order magnetically at TN≂178 K (=TN of elemental Dy) and undergo ferromagnetic transitions at temperatures which range from 100 K (400 Å Dy) to 175 K (40 Å Dy), significantly enhanced from the bulk TC=85 K. The Dy basal plane lattice parameters in the films were determined by room-temperature x-ray diffraction. We observe a change in these values that correlates with the rise in TC, which suggests that this rise is due to epitaxial strain. The relatively small low-temperature magnetic susceptibility displayed by these samples indicates the presence of a large anisotropy in the basal plane. We address both the issues of the susceptibility and the high ferromagnetic transition temperature.

  10. Anti-damping spin transfer torque through epitaxial nickel oxide

    SciTech Connect

    Moriyama, Takahiro; Nagata, Masaki; Yoshimura, Yoko; Matsuzaki, Noriko; Ono, Teruo; Takei, So; Tserkovnyak, Yaroslav; Terashima, Takahito

    2015-04-20

    We prepare the high quality epitaxial MgO(001)[100]/Pt(001)[100]/NiO(001)[100]/FeNi/SiO{sub 2} films to investigate the spin transport in the NiO antiferromagnetic insulator. The ferromagnetic resonance measurements of the FeNi under a spin current injection from the Pt by the spin Hall effect revealed the change of the ferromagnetic resonance linewidth depending on the amount of the spin current injection. The results can be interpreted that there is an angular momentum transfer through the NiO. A high efficient angular momentum transfer we observed in the epitaxial NiO can be attributed to the well-defined orientation of the antiferromagnetic moments and the spin quantization axis of the injected spin current.

  11. Nanoscale electrical properties of epitaxial Cu3Ge film.

    PubMed

    Wu, Fan; Cai, Wei; Gao, Jia; Loo, Yueh-Lin; Yao, Nan

    2016-01-01

    Cu3Ge has been pursued as next-generation interconnection/contact material due to its high thermal stability, low bulk resistivity and diffusion barrier property. Improvements in electrical performance and structure of Cu3Ge have attracted great attention in the past decades. Despite the remarkable progress in Cu3Ge fabrication on various substrates by different deposition methods, polycrystalline films with excess Ge were frequently obtained. Moreover, the characterization of nanoscale electrical properties remains challenging. Here we show the fabrication of epitaxial Cu3Ge thin film and its nanoscale electrical properties, which are directly correlated with localized film microstructures and supported by HRTEM observations. The average resistivity and work function of epitaxial Cu3Ge thin film are measured to be 6 ± 1 μΩ cm and ~4.47 ± 0.02 eV respectively, qualifying it as a good alternative to Cu. PMID:27363582

  12. Spin transport in epitaxial graphene on SiC (0001)

    NASA Astrophysics Data System (ADS)

    Du, Yuchen; Neal, Adam T.; Capano, Mike; Ye, Peide

    2013-03-01

    Graphene has been identified as a promising material for future spintronics devices due to its low spin orbit coupling and long spin diffusion lengths, even at room temperature. However, any device application requires the use of large-area graphene compatible with wafer-scale manufacturing methods, such as graphene grown epitaxially on SiC. We study spin transport in epitaxial graphene grown on SiC (0001) as a step toward future spintronics devices. A non-local spin valve signal of 200m Ω is observed at 77K, with a signal of 50m Ω resolved at 145K. Assuming a contact polarization of 10%, the measured signal corresponds to a spin diffusion length of 130nm at T =77K. Hanle effect spin precession measurements are ongoing.

  13. Columnar epitaxy of hexagonal and orthorhombic silicides on Si(111)

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; Nieh, C. W.; Xiao, Q. F.; Hashimoto, Shin

    1990-01-01

    Columnar grains of PtSi and CrSi2 surrounded by high-quality epitaxial silicon are obtained by ultrahigh vacuum codeposition of Si and metal in an approximately 10:1 ratio on Si(111) substrates heated to 610-840 C. This result is similar to that found previously for CoSi2 (a nearly-lattice-matched cubic-fluorite crystal) on Si(111), in spite of the respective orthorhombic and hexagonal structures of PtSi and CrSi2. The PtSi grains are epitaxial and have one of three variants of the relation defined by PtSi(010)/Si(111), with PtSi 001 line/Si 110 line type.

  14. Single crystalline Si substrate growth by lateral diffusion epitaxy

    NASA Astrophysics Data System (ADS)

    Li, Bo; Yu, Hao Ling; Shen, Huaxiang; Kitai, Adrian

    2013-03-01

    A novel crystal growth method named lateral diffusion epitaxy (LDE) as well as the necessary growth apparatus are described in detail. Single crystalline Si strips are grown on (1 1 1) Si substrates by LDE. The thickness of the LDE Si strips is around 100 μm, and the aspect ratio of width to thickness is around 2 which is an improvement compared with Si strips grown by conventional liquid phase epitaxy (LPE). The LDE Si strip can be peeled off from the substrate for further device processing since the 100 μm thickness provides reasonable mechanical strength. Due to the low cost of LDE technology it is potentially a good candidate for PV application if the LDE can achieve continuous growth and therefore grow Si strips in sizes for practical application.

  15. Nanoscale electrical properties of epitaxial Cu3Ge film

    NASA Astrophysics Data System (ADS)

    Wu, Fan; Cai, Wei; Gao, Jia; Loo, Yueh-Lin; Yao, Nan

    2016-07-01

    Cu3Ge has been pursued as next-generation interconnection/contact material due to its high thermal stability, low bulk resistivity and diffusion barrier property. Improvements in electrical performance and structure of Cu3Ge have attracted great attention in the past decades. Despite the remarkable progress in Cu3Ge fabrication on various substrates by different deposition methods, polycrystalline films with excess Ge were frequently obtained. Moreover, the characterization of nanoscale electrical properties remains challenging. Here we show the fabrication of epitaxial Cu3Ge thin film and its nanoscale electrical properties, which are directly correlated with localized film microstructures and supported by HRTEM observations. The average resistivity and work function of epitaxial Cu3Ge thin film are measured to be 6 ± 1 μΩ cm and ~4.47 ± 0.02 eV respectively, qualifying it as a good alternative to Cu.

  16. On the kinetic barriers of graphene homo-epitaxy

    SciTech Connect

    Zhang, Wei; Yu, Xinke; Xie, Ya-Hong; Cahyadi, Erica; Ratsch, Christian

    2014-12-01

    The diffusion processes and kinetic barriers of individual carbon adatoms and clusters on graphene surfaces are investigated to provide fundamental understanding of the physics governing epitaxial growth of multilayer graphene. It is found that individual carbon adatoms form bonds with the underlying graphene whereas the interaction between graphene and carbon clusters, consisting of 6 atoms or more, is very weak being van der Waals in nature. Therefore, small carbon clusters are quite mobile on the graphene surfaces and the diffusion barrier is negligibly small (∼6 meV). This suggests the feasibility of high-quality graphene epitaxial growth at very low growth temperatures with small carbon clusters (e.g., hexagons) as carbon source. We propose that the growth mode is totally different from 3-dimensional bulk materials with the surface mobility of carbon hexagons being the highest over graphene surfaces that gradually decreases with further increase in cluster size.

  17. Nanoscale electrical properties of epitaxial Cu3Ge film

    PubMed Central

    Wu, Fan; Cai, Wei; Gao, Jia; Loo, Yueh-Lin; Yao, Nan

    2016-01-01

    Cu3Ge has been pursued as next-generation interconnection/contact material due to its high thermal stability, low bulk resistivity and diffusion barrier property. Improvements in electrical performance and structure of Cu3Ge have attracted great attention in the past decades. Despite the remarkable progress in Cu3Ge fabrication on various substrates by different deposition methods, polycrystalline films with excess Ge were frequently obtained. Moreover, the characterization of nanoscale electrical properties remains challenging. Here we show the fabrication of epitaxial Cu3Ge thin film and its nanoscale electrical properties, which are directly correlated with localized film microstructures and supported by HRTEM observations. The average resistivity and work function of epitaxial Cu3Ge thin film are measured to be 6 ± 1 μΩ cm and ~4.47 ± 0.02 eV respectively, qualifying it as a good alternative to Cu. PMID:27363582

  18. Molecular Beam Epitaxy Growth of Iron Phthalocyanine Nanostructures

    SciTech Connect

    Debnath, A. K.; Samanta, S.; Singh, Ajay; Aswal, D. K.; Gupta, S. K.; Yakhmi, J. V.

    2009-06-29

    FePc films of different thickness have been deposited by molecular beam epitaxy (MBE) as a function of substrate temperature (25-300 deg. C) and deposition rate (0.02-0.07 nm/s). The morphology of a 60 nm alpha-phase film has been tuned from nanobrush (nearly parallel nanorods aligned normal to the substrate plane) to nanoweb (nanowires forming a web-like structure in the plane of the substrate) by changing the deposition rate from 0.02 to 0.07 nm/s. We propose growth mechanisms of nanoweb and nanobrush morphology based on the van der Waals (vdW) epitaxy. For air exposed FePc films I-V hysteresis was observed at 300 K and it is attributed to surface traps created by chemisorbed oxygen.

  19. Growth and properties of epitaxial GdN

    SciTech Connect

    Ludbrook, B. M.; Kuebel, M.; Ruck, B. J.; Preston, A. R. H.; Trodahl, H. J.; Farrell, I. L.; Reeves, R. J.; Durbin, S. M.; Ranno, L.

    2009-09-15

    Epitaxial gadolinium nitride films with well-oriented crystallites of up to 30 nm have been grown on yttria-stabilized zirconia substrates using a plasma-assisted pulsed laser deposition technique. We observe that the epitaxial GdN growth proceeds on top of a gadolinium oxide buffer layer that forms via reaction between deposited Gd and mobile oxygen from the substrate. Hall effect measurements show the films are electron doped to degeneracy, with carrier concentrations of 4x10{sup 20} cm{sup -3}. Magnetic measurements establish a T{sub C} of 70 K with a coercive field that can be tuned from 200 Oe to as low as 10 Oe.

  20. Scanning Tunneling Spectroscopy of Proximity Superconductivity in Epitaxial Multilayer Graphene

    PubMed Central

    Natterer, Fabian D.; Ha, Jeonghoon; Baek, Hongwoo; Zhang, Duming; Cullen, William; Zhitenev, Nikolai B.; Kuk, Young; Stroscio, Joseph A.

    2016-01-01

    We report on spatial measurements of the superconducting proximity effect in epitaxial graphene induced by a graphene-superconductor interface. Superconducting aluminum films were grown on epitaxial multilayer graphene on SiC. The aluminum films were discontinuous with networks of trenches in the film morphology reaching down to exposed graphene terraces. Scanning tunneling spectra measured on the graphene terraces show a clear decay of the superconducting energy gap with increasing separation from the graphene-aluminum edges. The spectra were well described by Bardeen-Cooper-Schrieffer (BCS) theory. The decay length for the superconducting energy gap in graphene was determined to be greater than 400 nm. Deviations in the exponentially decaying energy gap were also observed on a much smaller length scale of tens of nanometers. PMID:27088134

  1. Sub-micrometer epitaxial Josephson junctions for quantum circuits

    NASA Astrophysics Data System (ADS)

    Kline, Jeffrey S.; Vissers, Michael R.; da Silva, Fabio C. S.; Wisbey, David S.; Weides, Martin; Weir, Terence J.; Turek, Benjamin; Braje, Danielle A.; Oliver, William D.; Shalibo, Yoni; Katz, Nadav; Johnson, Blake R.; Ohki, Thomas A.; Pappas, David P.

    2012-02-01

    We present a fabrication scheme and testing results for epitaxial sub-micrometer Josephson junctions. The junctions are made using a high-temperature (1170 K) ‘via process’ yielding junctions as small as 0.8 µm in diameter by use of optical lithography. Sapphire (Al2O3) tunnel-barriers are grown on an epitaxial Re/Ti multilayer base-electrode. We have fabricated devices with both Re and Al top-electrodes. While room temperature (295 K) resistance versus area data are favorable for both types of top-electrodes, the low-temperature (50 mK) data show that junctions with the Al top-electrode have a much higher subgap resistance. The microwave loss properties of the junctions have been measured by use of superconducting Josephson junction qubits. The results show that high subgap resistance correlates with improved qubit performance.

  2. Oxidized Monolayers of Epitaxial Silicene on Ag(111)

    NASA Astrophysics Data System (ADS)

    Johnson, Neil W.; Muir, David I.; Moewes, Alexander

    2016-03-01

    The properties of epitaxial silicene monolayers on Ag(111) at various levels of oxidation are determined through complementary density functional theory calculations and soft X-ray spectroscopy experiments. Our calculations indicate that moderate levels of oxidation do not cause a significant bandgap opening in the epitaxial silicene monolayer, suggesting that oxygen functionalization is not a viable mechanism for bandgap tuning while the silicene monolayer remains on its metallic substrate. In addition, moderate oxidation is calculated to strongly distort the hexagonal Si lattice, causing it to cluster in regions of highest oxygen adatom concentration but retain its 2D sheet structure. However, our experiments reveal that beam-induced oxidation is consistent with the formation of islands of bulk-like SiO2. Complete exposure of the monolayer to ambient conditions results in a fully oxidized sample that closely resembles bulk SiO2, of which a significant portion is completely detached from the substrate.

  3. Oxidized Monolayers of Epitaxial Silicene on Ag(111)

    PubMed Central

    Johnson, Neil W.; Muir, David I.; Moewes, Alexander

    2016-01-01

    The properties of epitaxial silicene monolayers on Ag(111) at various levels of oxidation are determined through complementary density functional theory calculations and soft X-ray spectroscopy experiments. Our calculations indicate that moderate levels of oxidation do not cause a significant bandgap opening in the epitaxial silicene monolayer, suggesting that oxygen functionalization is not a viable mechanism for bandgap tuning while the silicene monolayer remains on its metallic substrate. In addition, moderate oxidation is calculated to strongly distort the hexagonal Si lattice, causing it to cluster in regions of highest oxygen adatom concentration but retain its 2D sheet structure. However, our experiments reveal that beam-induced oxidation is consistent with the formation of islands of bulk-like SiO2. Complete exposure of the monolayer to ambient conditions results in a fully oxidized sample that closely resembles bulk SiO2, of which a significant portion is completely detached from the substrate. PMID:26936144

  4. Oxidized Monolayers of Epitaxial Silicene on Ag(111).

    PubMed

    Johnson, Neil W; Muir, David I; Moewes, Alexander

    2016-03-03

    The properties of epitaxial silicene monolayers on Ag(111) at various levels of oxidation are determined through complementary density functional theory calculations and soft X-ray spectroscopy experiments. Our calculations indicate that moderate levels of oxidation do not cause a significant bandgap opening in the epitaxial silicene monolayer, suggesting that oxygen functionalization is not a viable mechanism for bandgap tuning while the silicene monolayer remains on its metallic substrate. In addition, moderate oxidation is calculated to strongly distort the hexagonal Si lattice, causing it to cluster in regions of highest oxygen adatom concentration but retain its 2D sheet structure. However, our experiments reveal that beam-induced oxidation is consistent with the formation of islands of bulk-like SiO2. Complete exposure of the monolayer to ambient conditions results in a fully oxidized sample that closely resembles bulk SiO2, of which a significant portion is completely detached from the substrate.

  5. Molded Concrete Center Mine Wall

    NASA Technical Reports Server (NTRS)

    Lewis, E. V.

    1987-01-01

    Proposed semiautomatic system forms concrete-foam wall along middle of coal-mine passage. Wall helps support roof and divides passage into two conduits needed for ventilation of coal face. Mobile mold and concrete-foam generator form sections of wall in place.

  6. Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom

    SciTech Connect

    Goyal, Amit

    2013-07-09

    A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallographic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A-plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.

  7. Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom

    SciTech Connect

    Goyal, Amit

    2012-07-24

    A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallographic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A-plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.

  8. Epitaxial Fe on free-standing GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Yang, Mingze; Darbandi, Ali; Majumder, Sarmita; Watkins, Simon; Kavanagh, Karen

    2016-07-01

    Epitaxial Fe contacts have been fabricated onto the top half of free-standing, Te-doped GaAs nanowires (NWs) via electrodeposition. Electrical isolation from the substrate via a polymeric layer enabled the measurement of electrical transport through individual wires. Using a fixed probe within a scanning electron microscope, an average metal-semiconductor diode barrier height of 0.69 ± 0.03 eV (ideality factor 1.48 ± 0.02) was found.

  9. Characterization of epitaxially grown films of vanadium oxides

    SciTech Connect

    Rogers, K.D.; Coath, J.A.; Lovell, M.C. , Shrivenham, Swindon, Wiltshire, SN6 8LA, England )

    1991-08-01

    The growth of VO{sub 2} and V{sub 2}O{sub 3} thin films by reactive sputtering has been investigated. Previously reported studies of such thin films have often presented ambiguous results concerning the precise nature of the layers produced. A thorough and comprehensive characterization program including x-ray diffraction, scanning electron microscopy, Rutherford-backscattering spectroscopy, and electrical conductivity measurements has been undertaken to ensure that the films produced were of a true epitaxial nature.

  10. Heterogeneous integration of epitaxial nanostructures: strategies and application drivers

    NASA Astrophysics Data System (ADS)

    Chui, Chi On; Shin, Kyeong-Sik; Kina, Jorge; Shih, Kun-Huan; Narayanan, Pritish; Moritz, C. Andras

    2012-10-01

    In order to sustain the historic progress in information processing, transmission, and storage, concurrent integration of heterogeneous functionality and materials with fine granularity is clearly imperative for the best connectivity, system performance, and density metrics. In this paper, we review recent developments in heterogeneous integration of epitaxial nanostructures for their applications toward our envisioned device-level heterogeneity using computing nanofabrics. We first identify the unmet need for heterogeneous integration in modern nanoelectronics and review state-of-the-art assembly approaches for nanoscale computing fabrics. We also discuss the novel circuit application driver, known as Nanoscale Application Specific Integrated Circuits (NASICs), which promises an overall performance-power-density advantage over CMOS and embeds built-in defect and parameter variation resilience. At the device-level, we propose an innovative cross-nanowire field-effect transistor (xnwFET) structure that simultaneously offers high performance, low parasitics, good electrostatic control, ease-of-manufacturability, and resilience to process variation. In addition, we specify technology requirements for heterogeneous integration and present two wafer-scale strategies. The first strategy is based on ex situ assembly and stamping transfer of pre-synthesized epitaxial nanostructures that allows tight control over key nanofabric parameters. The second strategy is based on lithographic definition of epitaxial nanostructures on native substrates followed by their stamping transfer using VLSI foundry processes. Finally, we demonstrate the successful concurrent heterogeneous co-integration of silicon and III-V compound semiconductor epitaxial nanowire arrays onto the same hosting substrate over large area, at multiple locations, with fine granularity, close proximity and high yield.

  11. Epitaxial Templating of C60 with a Molecular Monolayer.

    PubMed

    Rochford, L A; Jones, T S; Nielsen, C B

    2016-09-01

    Commensurate epitaxial monolayers of truxenone on Cu (111) were employed to template the growth of monolayer and bilayer C60. Through the combination of STM imaging and LEED analysis we have demonstrated that C60 forms a commensurate 8 × 8 overlayer on truxenone/Cu (111). Bilayers of C60 retain the 8 × 8 periodicity of templated monolayers and although Kagome lattice arrangements are observed these are explained with combinations of 8 × 8 symmetry. PMID:27540868

  12. Preferentially etched epitaxial liftoff of InP material

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G. (Inventor); Wilt, David M. (Inventor); Deangelo, Frank L. (Inventor)

    1995-01-01

    The present invention is directed toward a method of removing epitaxial substrates from host substrates. A sacrificial release layer of ternary material is placed on the substrate. A layer of InP is then placed on the ternary material. Afterward a layer of wax is applied to the InP layer to apply compressive force and an etchant material is used to remove the sacrificial release layer.

  13. Magnetic and magnetotransport properties of erbium silicide epitaxial films

    NASA Astrophysics Data System (ADS)

    Chroboczek, J. A.; Briggs, A.; Joss, W.; Auffret, S.; Pierre, J.

    1991-02-01

    Hexagonal Er3Si5 films epitaxially grown on Si show strong anisotropies in magnetization and magnetotransport below the ordering temperature. The magnetoresistance has a cusplike positive anomaly or is negative and featureless for a magnetic field applied, respectively, along or perpendicular to the [0001] axis. A noncollinear structure, composed of an antiferromagnetic and a ferromagnetic component accounts for the magnetization data. The latter used in conjunction with the Yamada-Takada theory of magnetotransport accounts for the magnetoresistance data.

  14. Martensite transformation of epitaxial Ni-Ti films

    SciTech Connect

    Buschbeck, J.; Kozhanov, A.; Kawasaki, J. K.; James, R. D.; Palmstroem, C. J.

    2011-05-09

    The structure and phase transformations of thin Ni-Ti shape memory alloy films grown by molecular beam epitaxy are investigated for compositions from 43 to 56 at. % Ti. Despite the substrate constraint, temperature dependent x-ray diffraction and resistivity measurements reveal reversible, martensitic phase transformations. The results suggest that these occur by an in-plane shear which does not disturb the lattice coherence at interfaces.

  15. Sealing system for piston rod of hot gas engine

    SciTech Connect

    Lundholm, S.G.; Ringqvist, S.A.

    1980-11-25

    An improvement to a sealing system for restricting fluid flow around a piston rod between a piston cylinder and crankshaft space in a hot gas engine where a seal element is secured around the piston rod in an intermediate chamber, the improvement including a link in the crankshaft space connecting, and permitting relative radial motion between, the piston rod and the crosshead and an o-ring having a diameter substantially greater than that of the piston rod and being secured between a lower ring securing the seal element in place around the piston rod and a wall of the intermediate chamber for frictionally restricting radial movement of the lower ring.

  16. Ferroelastic twin structures in epitaxial WO{sub 3} thin films

    SciTech Connect

    Yun, Shinhee; Woo, Chang-Su; Lee, Jin Hong; Chu, Kanghyun; Kim, Gi-Yeop; Choi, Si-Young; Sharma, Pankaj; Seidel, Jan; Song, Jong Hyun; Chung, Sung-Yoon; Yang, Chan-Ho

    2015-12-21

    Tungsten trioxide is a binary oxide that has potential applications in electrochromic windows, gas sensors, photo-catalysts, and superconductivity. Here, we analyze the crystal structure of atomically flat epitaxial layers on YAlO{sub 3} single crystal substrates and perform nanoscale investigations of the ferroelastic twins revealing a hierarchical structure at multiple length scales. We have found that the finest stripe ferroelastic twin walls along pseudocubic 〈100〉 axes are associated with cooperative mosaic rotations of the monoclinic films and the larger stripe domains along pseudocubic 〈110〉 axes are created to reduce the misfit strain through a commensurate matching of an effective in-plane lattice parameter between film and substrate. The typical widths of the two fine and larger stripe domains increase with film thickness following a power law with scaling exponents of ∼0.6 and ∼0.4, respectively. We have also found that the twin structure can be readily influenced by illumination with an electron beam or a tip-based mechanical compression.

  17. Investigation of the growth of garnet films by liquid phase epitaxy

    NASA Technical Reports Server (NTRS)

    Moody, J. W.; Shaw, R. W.; Sandfort, R. M.

    1974-01-01

    Liquid phase expitaxy was investigated to determine its applicability to fabricating magnetic rare earth garnet films for spacecraft data recording systems. Two mixed garnet systems were investigated in detail: (1) Gd-Y and (2) Eu-Yb-Y. All films were deposited on Gd3Ga5012 substrates. The uniaxial anisotropy of the Gd-Y garnets is primarily stress-induced. These garnets are characterized by high-domain wall mobility, low coercivity and modest anisotropy. Characteristic length was found to be relatively sensitive to temperature. The Eu-Yb-Y garnets exhibit acceptable mobilities, good temperature stability and reasonable quality factors. The uniaxial anisotropy of these garnets is primarily growth-induced. The system is well suited for compositional "tailoring" to optimize specific desirable properties. Liquid phase epitaxy can be used to deposit Gd3Ga5012 spacing layers on magnetic garnet films and this arrangement possesses certain advantages over more conventional magnetic filmspacing layer combinations. However, it cannot be used if the magnetic film is to be ion implanted.

  18. Vapor-phase epitaxy of gallium nitride by gallium arc discharge evaporation

    NASA Astrophysics Data System (ADS)

    Heikman, S.; Keller, S.; Mishra, U. K.

    2006-08-01

    Vapor-phase epitaxy of GaN was performed by combining ammonia with gallium evaporated into an inert gas stream by a DC arc discharge, and letting the mixture pass through a pair of heated graphite susceptors. Growth rates as high as 30 μm/h were achieved. The growth on the top sample was specular in a large area, and was of high quality as characterized by atomic force microscopy and photoluminescence spectroscopy. The bottom sample had a high density of macroscopic defects, presumably caused by Ga droplets in the gas phase resulting from the arc evaporation process. The experimental growth rate was found to be less than {1}/{3} of values predicted in a computer flow dynamic model of the growth system, and Ga-NH 3 pre-reactions were implicated as the likely cause of the discrepancy. The growth efficiency, calculated to 2%, could arguably be improved by reducing the reactor growth pressure, and by changing the reactor geometry to avoid Ga condensation on walls. Potential advantages of the described growth technique are cheap source materials of high purity and low equipment costs. Furthermore, since no corrosive gasses were used, hardware corrosion and gas-phase impurities can be reduced.

  19. Thermodynamics of the quasi-epitaxial flavin assembly around various-chirality carbon nanotubes.

    PubMed

    Sharifi, Roholah; Samaraweera, Milinda; Gascón, José A; Papadimitrakopoulos, Fotios

    2014-05-21

    Establishing methods to accurately assess and model the binding strength of surfactants around a given-chirality single-walled carbon nanotube (SWNT) are crucial for selective enrichment, targeted functionalization, and spectrally sharp nanodevices. Unlike surfactant exchange, which is subject to interferences from the second surfactant, we herein introduce a thermal dissociation method based on reversible H(+)/O2 doping to determine SWNT/surfactant thermodynamic stability values with greater fidelity. Thermodynamic values were reproduced using molecular mechanics augmented by ab initio calculations in order to better assess π-π interactions. This afforded detailed quantification of the flavin binding strength in terms of π-π stacking (55-58%), with the remaining portion roughly split 3:1 between electrostatic plus van der Waals flavin mononucleotide (FMN) interdigitation and H-bonding interactions, respectively. Quasi-epitaxial π-π alignment between the near-armchair FMN helix and the underlying nanotube lattice plays a crucial role in stabilizing these assemblies. The close resemblance of the thermal dissociation method to helix-coil and ligand-binding transitions of DNA opens up a unique insight into the molecular engineering of self-organizing surfactants around various-chirality nanotubes.

  20. Ferroelectric domain structure of anisotropically strained NaNbO{sub 3} epitaxial thin films

    SciTech Connect

    Schwarzkopf, J. Braun, D.; Schmidbauer, M.; Duk, A.; Wördenweber, R.

    2014-05-28

    NaNbO{sub 3} thin films have been grown under anisotropic biaxial strain on several oxide substrates by liquid-delivery spin metalorganic chemical vapor deposition. Compressive lattice strain of different magnitude, induced by the deposition of NaNbO{sub 3} films with varying film thickness on NdGaO{sub 3} single crystalline substrates, leads to modifications of film orientation and phase symmetry, which are similar to the phase transitions in Pb-containing oxides near the morphotropic phase boundary. Piezoresponse force microscopy measurements exhibit large out-of-plane polarization components, but no distinctive domain structure, while C-V measurements indicate relaxor properties in these films. When tensile strain is provoked by the epitaxial growth on DyScO{sub 3}, TbScO{sub 3}, and GdScO{sub 3} single crystalline substrates, NaNbO{sub 3} films behave rather like a normal ferroelectric. The application of these rare-earth scandate substrates yields well-ordered ferroelectric stripe domains of the type a{sub 1}/a{sub 2} with coherent domain walls aligned along the [001] substrate direction as long as the films are fully strained. With increasing plastic lattice relaxation, initially, a 2D domain pattern with still exclusively in-plane electric polarization, and finally, domains with in-plane and out-of-plane polar components evolve.

  1. Electron microscopy of Staphylococcus aureus cell wall lysis.

    PubMed

    Virgilio, R; González, C; Muñoz, N; Mendoza, S

    1966-05-01

    Virgilio, Rafael (Escuela de Química y Farmacia, Universidad de Chile, Santiago, Chile), C. González, Nubia Muñoz, and Silvia Mendoza. Electron microscopy of Staphylococcus aureus cell wall lysis. J. Bacteriol. 91:2018-2024. 1966.-A crude suspension of Staphylococcus aureus cell walls (strain Cowan III) in buffer solution was shown by electron microscopy to lyse slightly after 16 hr, probably owing to the action of autolysin. The lysis was considerably faster and more intense after the addition of lysozyme. A remarkable reduction in thickness and rigidity of the cell walls, together with the appearance of many irregular protrusions in their outlines, was observed after 2 hr; after 16 hr, there remained only a few recognizable cell wall fragments but many residual particulate remnants. When autolysin was previously inactivated by trypsin, there was a complete inhibition of the lytic action of lysozyme; on the other hand, when autolysin was inactivated by heat and lysozyme was added, a distinct decrease in the thickness of the cell walls was observed, but there was no destruction of the walls. The lytic action of lysozyme, after treatment with hot 5% trichloroacetic acid, gave rise to a marked dissolution of the structure of the cell walls, which became lost against the background, without, however, showing ostensible alteration of wall outlines. From a morphological point of view, the lytic action of autolysin plus lysozyme was quite different from that of trichloroacetic acid plus lysozyme, as shown by electron micrographs, but in both cases it was very intense. This would suggest different mechanisms of action for these agents.

  2. Wall-to-suspension heat transfer in circulating fluidized beds

    SciTech Connect

    Wirth, K.E.

    1995-12-31

    The wall-to-suspension heat transfer in circulating fluidized beds depends on the fluid mechanics immediately near the wall and on the thermal properties of the gas used. Experimental investigations of circulating fluidized beds of low dimensionless pressure gradients with different solid particles like bronze, glass and polystyrene at ambient temperatures showed no influence of the conductivity and the heat capacity of the solids on the heat transfer coefficient. Consequently the heat transfer coefficient in the form of the dimensionless Nusselt number can be described by the dimensionless numbers which characterize the gas-solid-flow near the wall. These numbers are the Archimedes number and the pressure drop-number. The last number relates the cross-sectional average solids concentration to the solids concentration at minimum fluidization condition. With the aid of a model of segregated vertical gas-solid flow, the flow pattern in the wall region can be calculated and thus the wall heat transfer which depends only on heat conduction in the gas and on the convective heat transfer by the gas. With elevated suspension temperatures, radiation contributes additionally to the heat transfer. When the solids concentration is low, the effect of the radiation on the heat transfer is high. Increasing solids concentration results in a decrease of the radiation effect due to the wall being shielded from the radiation of the hot particles in the core region by the cold solids clusters moving down the wall. A simple correlation is presented for calculating the wall-to-suspension heat transfer in circulating fluidized beds.

  3. Terahertz and mid-infrared reflectance of epitaxial graphene

    PubMed Central

    Santos, Cristiane N.; Joucken, Frédéric; De Sousa Meneses, Domingos; Echegut, Patrick; Campos-Delgado, Jessica; Louette, Pierre; Raskin, Jean-Pierre; Hackens, Benoit

    2016-01-01

    Graphene has emerged as a promising material for infrared (IR) photodetectors and plasmonics. In this context, wafer scale epitaxial graphene on SiC is of great interest in a variety of applications in optics and nanoelectronics. Here we present IR reflectance spectroscopy of graphene grown epitaxially on the C-face of 6H-SiC over a broad optical range, from terahertz (THz) to mid-infrared (MIR). Contrary to the transmittance, reflectance measurements are not hampered by the transmission window of the substrate, and in particular by the SiC Reststrahlen band in the MIR. This allows us to present IR reflectance data exhibiting a continuous evolution from the regime of intraband to interband charge carrier transitions. A consistent and simultaneous analysis of the contributions from both transitions to the optical response yields precise information on the carrier dynamics and the number of layers. The properties of the graphene layers derived from IR reflection spectroscopy are corroborated by other techniques (micro-Raman and X-ray photoelectron spectroscopies, transport measurements). Moreover, we also present MIR microscopy mapping, showing that spatially-resolved information can be gathered, giving indications on the sample homogeneity. Our work paves the way for a still scarcely explored field of epitaxial graphene-based THz and MIR optical devices. PMID:27102827

  4. Terahertz and mid-infrared reflectance of epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Santos, Cristiane N.; Joucken, Frédéric; de Sousa Meneses, Domingos; Echegut, Patrick; Campos-Delgado, Jessica; Louette, Pierre; Raskin, Jean-Pierre; Hackens, Benoit

    2016-04-01

    Graphene has emerged as a promising material for infrared (IR) photodetectors and plasmonics. In this context, wafer scale epitaxial graphene on SiC is of great interest in a variety of applications in optics and nanoelectronics. Here we present IR reflectance spectroscopy of graphene grown epitaxially on the C-face of 6H-SiC over a broad optical range, from terahertz (THz) to mid-infrared (MIR). Contrary to the transmittance, reflectance measurements are not hampered by the transmission window of the substrate, and in particular by the SiC Reststrahlen band in the MIR. This allows us to present IR reflectance data exhibiting a continuous evolution from the regime of intraband to interband charge carrier transitions. A consistent and simultaneous analysis of the contributions from both transitions to the optical response yields precise information on the carrier dynamics and the number of layers. The properties of the graphene layers derived from IR reflection spectroscopy are corroborated by other techniques (micro-Raman and X-ray photoelectron spectroscopies, transport measurements). Moreover, we also present MIR microscopy mapping, showing that spatially-resolved information can be gathered, giving indications on the sample homogeneity. Our work paves the way for a still scarcely explored field of epitaxial graphene-based THz and MIR optical devices.

  5. Epitaxial Ni/VO2 heterostructures on Si (001)

    NASA Astrophysics Data System (ADS)

    Singamaneni, Srinivasa Rao; Foley, Gabrielle; Prater, John; Narayan, Jay

    VO2 is a strongly correlated oxide, undergoes a first order metal-insulator (MIT) well above the room temperature 340K. Previous works have shown that the stress associated with structural changes across MIT, VO2 can produce significant changes in magnetic properties of over layer ferromagnetic films such as Ni. This control of the magnetic properties could be very important to many technological applications. However, the current use of r-sapphire as substrate can be restrictive in the microelectronics industry. The previous works focused their studies on polycrystalline Ni and VO2 films, which do not allow the precise controlling of the associated properties due to poor reproducibility of polycrystalline films. We have investigated the magnetic and electronic properties of Ni/VO2 films when epitaxially integrated on Si (001) by pulsed laser deposition using domain matching epitaxy paradigm. Ni was grown both in nanoscale islands and layered form. The XRD results showed that the Ni, VO2and YSZ layers were grown epitaxially in single out of plane orientations. We found that the hysteresis in resistance vs. temperature curves in VO2 thin films was retained even when it is in close proximity with the Ni layer which helped confirm that VO2 layer preserves its characteristic features, revealed the fingerprint magnetic features of Ni layer. We will present and discuss our comprehensive experimental findings.

  6. A fabrication technology for epitaxial Ni-Mn-Ga microactuators

    NASA Astrophysics Data System (ADS)

    Khelfaoui, F.; Kohl, M.; Buschbeck, J.; Heczko, O.; Fähler, S.; Schultz, L.

    2008-05-01

    This paper reports on the fabrication and characterization of epitaxial Ni-Mn-Ga microactuators. Ni-Mn-Ga films are grown on heated single-crystalline MgO substrates by DC magnetron sputtering. X-ray diffraction measurements demonstrate epitaxial growth of the films. At room temperature, the crystal structure is identified to be non-modulated (NM) tetragonal martensite. Electrical resistance measurements confirm that the films display the martensitic phase transformation well above the Curie temperature TC of 325 K. Orientation-dependent magnetization measurements are performed to determine magnetic film properties. Micromachining of the Ni-Mn-Ga films is performed on an alumina substrate covered by a temporary adhesive layer. A transfer bonding process is developed to finally integrate the micromachined Ni-Mn-Ga structures to a target substrate in order to obtain NiMnGa microactuators having freely movable microparts. Temperature-displacement characteristics demonstrate the actuation performance of epitaxial NiMnGa microactuators for the first time.

  7. X-ray measurement of magnetoelastic strain in epitaxial Er

    NASA Astrophysics Data System (ADS)

    Durfee, C. S.; Conover, M. J.; Flynn, C. P.

    1997-03-01

    Magnetic transitions are frequently accompanied by magnetoelastic distortions of the crystal lattice. In the case of epitaxially-grown thin magnetic films, however, distortions of the unit cell are potentially restricted by the clamping of the film to the substrate. In thicker epitaxial films (≈ 0.5 μ m), we expect that a film will not be rigidly clamped but will allow dislocations to absorb the lattice mismatch with the substrate. A thick epitaxial magnetic film in this limit offers a system to study dislocation formation and motion in the presence of a tunable field-induced mismatch between film and substrate. For this study, we have prepared strain-free Er films on sapphire by well-known MBE techniques, and have investigated magnetoelastic distortions using x-ray diffraction. X-ray measurements were performed using specially-constructed 40 kOe magnet dewar with x-ray windows. In-plane and perpendicular lattice parameters were measured at several applied magnetic fields, which allow the degree of clamping in the constrained direction to be directly measured. These strains will be discussed in the context of dislocation motion to accommodate lattice mismatch.

  8. Processing and characterization of epitaxial GaAs radiation detectors

    NASA Astrophysics Data System (ADS)

    Wu, X.; Peltola, T.; Arsenovich, T.; Gädda, A.; Härkönen, J.; Junkes, A.; Karadzhinova, A.; Kostamo, P.; Lipsanen, H.; Luukka, P.; Mattila, M.; Nenonen, S.; Riekkinen, T.; Tuominen, E.; Winkler, A.

    2015-10-01

    GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 - 130 μm thick epitaxial absorption volume. Thick undoped and heavily doped p+ epitaxial layers were grown using a custom-made horizontal Chloride Vapor Phase Epitaxy (CVPE) reactor, the growth rate of which was about 10 μm / h. The GaAs p+/i/n+ detectors were characterized by Capacitance Voltage (CV), Current Voltage (IV), Transient Current Technique (TCT) and Deep Level Transient Spectroscopy (DLTS) measurements. The full depletion voltage (Vfd) of the detectors with 110 μm epi-layer thickness is in the range of 8-15 V and the leakage current density is about 10 nA/cm2. The signal transit time determined by TCT is about 5 ns when the bias voltage is well above the value that produces the peak saturation drift velocity of electrons in GaAs at a given thickness. Numerical simulations with an appropriate defect model agree with the experimental results.

  9. Stability and Rupture of Alloyed Atomic Terraces on Epitaxial Interfaces

    NASA Astrophysics Data System (ADS)

    Michailov, Michail

    The detailed knowledge of the fine atomic structure of epitaxial interface is of fundamental importance for design and fabrication of electronic devices with exotic physical properties. Recently, it has been shown that accounting for diffusion energy barriers at specific sites on the epitaxial interface (atomic terraces, steps, kinks and imperfections), allows fine tuning of the adatom thermal energy which opens up a way for specific nanoscale surface design. Hence, through simple temperature variation, the surface migration of foreign atoms and clusters leads to formation of a variety of alloyed or pure terraces, alloyed islands and alloyed atomic stripes thus forming nanoscale surface patterns. A key role in this scenario plays the density of steps and kinks at the epitaxial interface. On that physical background, in the present paper we discuss the structure, stability and rupture of alloyed terraces as a first step towards the formation of alloyed two-dimensional islands on pure, non-alloyed substrate. The atomistic simulational model reveals a temperature-dependent critical terrace width for rupture and specifies criteria for thermodynamic stability. In the case of incomplete alloying we analyze the competition and overlapping of the elastic strain fields generated by opposite terrace edges. The specific atomic ordering in alloyed islands is also discussed. The simulation results frame the limits of incomplete surface-confined intermixing and point to a path to nanoscale surface design.

  10. Electronic properties of epitaxial silicene on diboride thin films.

    PubMed

    Friedlein, Rainer; Yamada-Takamura, Yukiko

    2015-05-27

    The Si counterpart of graphene—silicene—has partially similar but also unique electronic properties that relate to the presence of an extended π electronic system, the flexible crystal structure and the large spin-orbit coupling. Driven by predictions for exceptional electronic properties like the presence of massless charge carriers, the occurrence of the quantum Hall effect and perfect spin-filtering in free-standing, unreconstructed silicene, the recent experimental realization of largely sp(2)-hybridized, Si honeycomb lattices grown on a number of metallic substrates provided the opportunity for the systematic study of the electronic properties of epitaxial silicene phases. Following a discussion of theoretical predictions for free-standing silicene, we review properties of (√3 × √3)-reconstructed, epitaxial silicene phases but with the emphasis on the extensively studied case of silicene on ZrB2(0 0 0 1) thin films. As the experimental results show, the structural and electronic properties are highly interlinked and leave their fingerprint on the chemical states of individual Si atoms as revealed in core-level photoelectron spectra as well as in the valence electronic structure and low-energy interband transitions. With the critical role of substrates and of the chemical stability of epitaxial silicene highlighted, finally, benefits and challenges for any future silicene-based nanoelectronics are being put into perspective.

  11. Decontamination of the Plum Brook Reactor Facility Hot Cells

    SciTech Connect

    Peecook, K.M.

    2008-07-01

    The NASA Plum Brook Reactor Facility decommissioning project recently completed a major milestone with the successful decontamination of seven hot cells. The cells included thick concrete walls and leaded glass windows, manipulator arms, inter cell dividing walls, and roof slabs. There was also a significant amount of embedded conduit and piping that had to be cleaned and surveyed. Prior to work starting evaluation studies were performed to determine whether it was more cost effective to do this work using a full up removal approach (rip and ship) or to decontaminate the cells to below required clean up levels, leaving the bulk of the material in place. This paper looks at that decision process, how it was implemented, and the results of that effort including the huge volume of material that can now be used as fill during site restoration rather than being disposed of as LLRW. (authors)

  12. Vascular design for reducing hot spots and stresses

    NASA Astrophysics Data System (ADS)

    Rocha, L. A. O.; Lorente, S.; Bejan, A.

    2014-05-01

    This paper is a proposal to embed tree-shaped vasculatures in a wall designed such that the wall withstands without excessive hot spots and peak stresses the intense heating and pressure that impinge on it. The vasculature is a quilt of square-shaped panels, each panel having a tree vasculature that connects the center with the perimeter. The vascular designs for volumetric cooling can be complemented by the shaping and distributing of channels for maximum strength and thermal performance at the same time. Numerical simulations of heat flow and thermal stresses in three directions show that it is possible to determine the optimal geometric features of configurations with radial channels and trees with radial and one level of bifurcations. The global performance is evaluated in terms of the overall thermal resistance and peak von Mises stresses. The dendritic design is superior under the studied thermal condition.

  13. Logic Gates Made of N-Channel JFETs and Epitaxial Resistors

    NASA Technical Reports Server (NTRS)

    Krasowski, Michael J.

    2008-01-01

    Prototype logic gates made of n-channel junction field-effect transistors (JFETs) and epitaxial resistors have been demonstrated, with a view toward eventual implementation of digital logic devices and systems in silicon carbide (SiC) integrated circuits (ICs). This development is intended to exploit the inherent ability of SiC electronic devices to function at temperatures from 300 to somewhat above 500 C and withstand large doses of ionizing radiation. SiC-based digital logic devices and systems could enable operation of sensors and robots in nuclear reactors, in jet engines, near hydrothermal vents, and in other environments that are so hot or radioactive as to cause conventional silicon electronic devices to fail. At present, current needs for digital processing at high temperatures exceed SiC integrated circuit production capabilities, which do not allow for highly integrated circuits. Only single to small number component production of depletion mode n-channel JFETs and epitaxial resistors on a single substrate is possible. As a consequence, the fine matching of components is impossible, resulting in rather large direct-current parameter distributions within a group of transistors typically spanning multiples of 5 to 10. Add to this the lack of p-channel devices to complement the n-channel FETs, the lack of precise dropping diodes, and the lack of enhancement mode devices at these elevated temperatures and the use of conventional direct coupled and buffered direct coupled logic gate design techniques is impossible. The presented logic gate design is tolerant of device parameter distributions and is not hampered by the lack of complementary devices or dropping diodes. In addition to n-channel JFETs, these gates include level-shifting and load resistors (see figure). Instead of relying on precise matching of parameters among individual JFETS, these designs rely on choosing the values of these resistors and of supply potentials so as to make the circuits perform

  14. Epitaxial film transfer technique for producing single crystal Si film on an insulating substrate

    NASA Astrophysics Data System (ADS)

    Kimura, M.; Egami, K.; Kanamori, M.; Hamaguchi, T.

    1983-08-01

    Epitaxial film transfer, a new technique for producing a single crystal Si film with both large size and high quality on an insulating substrate, is demonstrated. The technique in which an epitaxial Si film is transferred to a secondary substrate by using three fundamental processes of epitaxial growth, bonding of two wafers, and substrate elimination, can produce a 2-in. single crystal Si film as thin as 1.5 μm on a insulating substrate. Thickness variation can be controlled to ±0.06 μm across a 2-in. wafer. An epitaxial Si film is transferred without significant degradation in quality although a fine film waving exists.

  15. Epitaxial orientation of Mg{sub 2}Si(110) thin film on Si(111) substrate

    SciTech Connect

    Wang, Y.; Wang, X. N.; Mei, Z. X.; Du, X. L.; Zou, J.; Jia, J. F.; Xue, Q. K.; Zhang, X. N.; Zhang, Z.

    2007-12-15

    Epitaxial Mg{sub 2}Si(110) thin film has been obtained on Si(111) substrate by thermally enhanced solid-phase reaction of epitaxial Mg film with underlying Si substrate. An epitaxial orientation relationship of Si(111) parallel Mg{sub 2}Si(110) and Si<110> parallel Mg{sub 2}Si<110> has been revealed by transmission electron microscopy. The formation of the unusual epitaxial orientation relationship is attributed to the strain relaxation of Mg{sub 2}Si film in a MgO/Mg{sub 2}Si/Si double heterostructure.

  16. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

    DOEpatents

    McKee, Rodney A.; Walker, Frederick J.

    1993-01-01

    A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

  17. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  18. Small-signal theory of subterahertz overmoded surface wave oscillator with distributed wall loss

    NASA Astrophysics Data System (ADS)

    Wang, Guangqiang; Wang, Jianguo; Li, Shuang; Wang, Xuefeng

    2015-09-01

    A small-signal theory of the overmoded surface wave oscillator (SWO) with distributed wall loss is presented in this letter. The wall loss considered here includes the surface resistance and surface roughness. The cold and hot characteristics of 0.14 THz SWO are studied by the small-signal theory. Numerical results show that as the increase of wall loss, the working frequency decreases slightly, the rise time and startup time of oscillation increase significantly, and the output power decreases dramatically. Particle-in-cell (PIC) simulation confirms the prediction by the small-signal theory.

  19. Geometric optics radome analysis wall incorporating effects of wall curvature

    NASA Astrophysics Data System (ADS)

    Kozakoff, Dennis J.

    1993-07-01

    In this research, a principal unmodeled error contributor in radome analysis is identified as the local plane approximation at the ray intercept point. An improved approach to modeling and computing the effects of the radome wall was developed which improves the radome wall transmission wall analysis in three respects: use of surface integration, utilization of a divergence factor (DF) to account for wall curvature, and incorporation of the effects of multiple refraction (MR). Modeling an incident plane wave on an external reference plane as an ensemble of Huygen's sources, geometric optics is used to trace the fields from the reference plane through the radome wall to a receiving monopulse antenna, where the wall transmissions on each ray are collected. The fact that the integration of a bundle of rays through the radome wall, as opposed to a single ray, more densely samples the curvature variation results in a more robust model. A DF derived from Snell's law for spherical shells accounts for the local wall curvature at the ray intercept point. To validate the approach, a microwave measurement setup was assembled around a network analyzer. Swept frequency data were obtained for similar monolithic wall dielectric panels but with different wall curvatures. Comparisons were then with measured data and the predictions of the model herein.

  20. Raman spectra of epitaxial graphene on SiC and of epitaxial graphene transferred to SiO2.

    PubMed

    Lee, Dong Su; Riedl, Christian; Krauss, Benjamin; von Klitzing, Klaus; Starke, Ulrich; Smet, Jurgen H

    2008-12-01

    Raman spectra were measured for mono-, bi-, and trilayer graphene grown on SiC by solid state graphitization, whereby the number of layers was preassigned by angle-resolved ultraviolet photoemission spectroscopy. It was found that the only unambiguous fingerprint in Raman spectroscopy to identify the number of layers for graphene on SiC(0001) is the line width of the 2D (or D*) peak. The Raman spectra of epitaxial graphene show significant differences as compared to micromechanically cleaved graphene obtained from highly oriented pyrolytic graphite crystals. The G peak is found to be blue-shifted. The 2D peak does not exhibit any obvious shoulder structures, but it is much broader and almost resembles a single-peak even for multilayers. Flakes of epitaxial graphene were transferred from SiC onto SiO2 for further Raman studies. A comparison of the Raman data obtained for graphene on SiC with data for epitaxial graphene transferred to SiO2 reveals that the G peak blue-shift is clearly due to the SiC substrate. The broadened 2D peak however stems from the graphene structure itself and not from the substrate.

  1. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    SciTech Connect

    Kushvaha, S. S. Pal, P.; Shukla, A. K.; Joshi, Amish G.; Gupta, Govind; Kumar, M.; Singh, S.; Gupta, Bipin K.; Haranath, D.

    2014-02-15

    We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001) substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 10{sup 8} cm{sup −2} at 750 °C) than that of the low temperature grown sample (1.1 × 10{sup 9} cm{sup −2} at 730 °C). A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  2. Multifocal hot spots demonstrated by whole-body 131I scintigraphy and SPECT/CT after transaxillary endoscopic thyroidectomy.

    PubMed

    Kim, Ho Seong; Kim, Seok Hwi; Kim, Jung Han; Kim, Byung-Tae; Lee, Kyung-Han

    2015-03-01

    A 35-year-old woman received open thyroidectomy for a thyroid nodule that was confirmed as papillary carcinoma. Whole-body 131I scintigraphy during thyroid ablation demonstrated high uptake in the thyroid bed and multiple focal hot spots in the thorax. SPECT/CT localized the hot spots to the right chest wall and axilla, as well as to the left chest wall. The surgeon recognized these sites to concur with the transaxillary tract used during endoscopic thyroidectomy for nodular hyperplasia 8 years previously. Thus, this case illustrates how thyroidal tissue fragments seeded during endoscopic thyroidectomy can be mistaken for thyroid cancer metastasis on 131I scintigraphy.

  3. Axions from wall decay

    SciTech Connect

    Chang, S; Hagmann, C; Sikivie, P

    2001-01-08

    The authors discuss the decay of axion walls bounded by strings and present numerical simulations of the decay process. In these simulations, the decay happens immediately, in a time scale of order the light travel time, and the average energy of the radiated axions is {approx_equal} 7m{sub a} for v{sub a}/m{sub a} {approx_equal} 500. is found to increase approximately linearly with ln(v{sub a}/m{sub a}). Extrapolation of this behavior yields {approx_equal} 60 m{sub a} in axion models of interest.

  4. Eye-wall resection.

    PubMed Central

    Char, D H; Miller, T; Crawford, J B

    2000-01-01

    PURPOSE: To review the ocular retention rates, visual results, and metastases in uveal tumors managed with eye-wall resection techniques. METHODS: This was a retrospective analysis of uveal tumors selected for eye-wall resection with the surgical procedures performed by a single surgeon. All enucleation specimens were reviewed by one author. Both parametric and non-parametric analysis of data was performed. RESULTS: A total of 132 eyes were scheduled for eye-wall resection surgery. Mean patient age was 52 years (range, 11 to 86 years). Tumors involved the iris alone in 17 cases, the iris-ciliary body in 53, the ciliary body alone in 16, and the choroid (ciliochoroidal, iris-ciliary body-choroid, or choroid) in 46 cases. A total of 114 eyes harbored melanomas; tumors located more posteriorly were more likely to have epithelioid cells (P < .05). Mean follow-up was 6 years. Mean number of clock hours in iris and iris-ciliary body tumors was 3.5. In tumors that involved the choroid, the mean largest diameter was 12.6 mm and the mean thickness was 8.2 mm. Ninety-three (70%) of 132 eyes were retained. Histologic assessment of surgical margins did not correlate with either evidence of tumor in enucleated eyes or metastatic disease. Surgical margins of tumors located more anteriorly were more likely to be clear on histologic evaluation (P < .05). Approximately 56% of retained eyes had a final visual acuity of 20/40 or better; visual results were significantly better in tumors located more anteriorly (P < .05). All retained eyes with iris tumors had a final visual acuity of 20/40 or better. In tumors that involved the choroid, 8 of 25 retained eyes kept visual acuity of 20/40 or better. Metastases developed in 8 patients; all metastatic events developed in patients with tumors that involved the choroid, and 7 of 8 were mixed cell melanomas. CONCLUSIONS: Seventy percent of eyes were retained, and 56% of these had a final visual acuity of 20/40 or better. Only 7% of patients

  5. Gullies in Crater Wall

    NASA Technical Reports Server (NTRS)

    2004-01-01

    6 April 2004 This Mars Global Surveyor (MGS) Mars Orbiter Camera (MOC) image shows gullies in the wall of a large impact crater in Newton Basin near 41.9oS, 158.1oW. Such gullies may have formed by downslope movement of wet debris--i.e., water. Unfortunately, because the responsible fluid (if there was one) is no longer present today, only the geomorphology of the channels and debris aprons can be used to deduce that water might have been involved. The image covers an area about 3 km (1.9 mi) across. Sunlight illuminates the scene from the upper left.

  6. Production of vertical arrays of small diameter single-walled carbon nanotubes

    DOEpatents

    Hauge, Robert H; Xu, Ya-Qiong

    2013-08-13

    A hot filament chemical vapor deposition method has been developed to grow at least one vertical single-walled carbon nanotube (SWNT). In general, various embodiments of the present invention disclose novel processes for growing and/or producing enhanced nanotube carpets with decreased diameters as compared to the prior art.

  7. CONTROL HOUSE, TRA620. MASONS ERECT PUMICE BLOCK WALLS. BUILDING WILL ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    CONTROL HOUSE, TRA-620. MASONS ERECT PUMICE BLOCK WALLS. BUILDING WILL CONTROL ACCESS TO MTR AND OTHER "HOT" AND CLASSIFIED AREAS. INL NEGATIVE NO. 577. Unknown Photographer, 9/11/1950 - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

  8. A&M. TAN607. Structural supports for biparting door on east wall ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. TAN-607. Structural supports for biparting door on east wall of hot shop. Special services cubicle shielding. Ralph M. Parsons 902-3-ANP-607-S141. Date: December 1952. Approved by INEEL Classification Office for public release. INEEL index code no. 034-0607-60-693-106785 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  9. Structure and magnetic properties of epitaxial terbium- iron thin films

    NASA Astrophysics Data System (ADS)

    Wang, Chuei-Tang

    TbFe2 is a giant magnetostrictive material which has the largest known room temperature magnetostriction constant. The large magnetostriction constant suggests that we can manipulate the magnetic anisotropy of the material using small strains. Other research groups have grown amorphous and polycrystalline TbFe2 films; however, these films lose giant mangetostriction because of diordered atomic structure in the amorphous films and random grain orientation in the polycrystalline films. Single-crystal structure is needed to achieve the large magnetostriction, so epitaxial growth of TbFe2 thin films is necessary. The goal of this research is to grow epitaxial TbFe2 films and study the effect of film strain on magnetic anisotropy. A technique was developed to grow epitaxial TbFe2films using DC magnetron sputtering. The films were grown in a UHV system using elemental Tb and Fe sputtering targets and single-crystal Al2O3, MgO, and CaF2 substrates. (110) -oriented Mo, W, and Nb were used as buffer layers to provide the base for epitaxial growth and to prevent chemical reactions between the TbFe2 films and the substrates. On the Mo and W buffer layers the TbFe2 film is (111) -oriented but on the Nb buffer layer it is (110) -oriented. Preliminary calculation of magnetostrictive anisotropy in TbFe2(111) films predicts that compressive strain greater than 0.5% will induce perpendicular magnetization while tensile strain greater than 0.5% will induce an in- plane magnetization. Epitaxial growth on CaF2 provides compressive thermal strain of 0.51%, and SQUID measurements confirmed that these samples did have perpendicular magnetization. On the other hand, Al2O3 provides tensile thermal strain of 0.56%, and SQUID measurements showed the films on Al2O3 were in-plane. The values of strain on these three substrates were determined by strain measurement from synchrotron radiation. X-ray epitaxial quality measurements revealed a new orientation relationship, R30o, at the TbFe2

  10. Prometheus Hot Leg Piping Concept

    SciTech Connect

    Gribik, Anastasia M.; DiLorenzo, Peter A.

    2007-01-30

    The Naval Reactors Prime Contractor Team (NRPCT) recommended the development of a gas cooled reactor directly coupled to a Brayton energy conversion system as the Space Nuclear Power Plant (SNPP) for NASA's Project Prometheus. The section of piping between the reactor outlet and turbine inlet, designated as the hot leg piping, required unique design features to allow the use of a nickel superalloy rather than a refractory metal as the pressure boundary. The NRPCT evaluated a variety of hot leg piping concepts for performance relative to SNPP system parameters, manufacturability, material considerations, and comparison to past high temperature gas reactor (HTGR) practice. Manufacturability challenges and the impact of pressure drop and turbine entrance temperature reduction on cycle efficiency were discriminators between the piping concepts. This paper summarizes the NRPCT hot leg piping evaluation, presents the concept recommended, and summarizes developmental issues for the recommended concept.

  11. Promethus Hot Leg Piping Concept

    SciTech Connect

    AM Girbik; PA Dilorenzo

    2006-01-24

    The Naval Reactors Prime Contractor Team (NRPCT) recommended the development of a gas cooled reactor directly coupled to a Brayton energy conversion system as the Space Nuclear Power Plant (SNPP) for NASA's Project Prometheus. The section of piping between the reactor outlet and turbine inlet, designated as the hot leg piping, required unique design features to allow the use of a nickel superalloy rather than a refractory metal as the pressure boundary. The NRPCT evaluated a variety of hot leg piping concepts for performance relative to SNPP system parameters, manufacturability, material considerations, and comparison to past high temperature gas reactor (HTGR) practice. Manufacturability challenges and the impact of pressure drop and turbine entrance temperature reduction on cycle efficiency were discriminators between the piping concepts. This paper summarizes the NRPCT hot leg piping evaluation, presents the concept recommended, and summarizes developmental issues for the recommended concept.

  12. Archaeal Nitrification in Hot Springs

    NASA Astrophysics Data System (ADS)

    Richter, A.; Daims, H.; Reigstad, L.; Wanek, W.; Wagner, M.; Schleper, C.

    2006-12-01

    Biological nitrification, i.e. the aerobic conversion of ammonia to nitrate via nitrite, is a major component of the global nitrogen cycle. Until recently, it was thought that the ability to aerobically oxidize ammonia was confined to bacteria of the phylum Proteobacteria. However, it has recently been shown that Archaea of the phylum Crenarchaeota are also capable of ammonia oxidation. As many Crenarchaeota are thermophilic or hyperthermophilic, and at least some of them are capable of ammonia oxidation we speculated on the existence of (hyper)thermophilic ammonia-oxidizing archaea (AOA). Using PCR primers specifically targeting the archaeal ammonia monooxygenase (amoA) gene, we were indeed able to confirm the presence of such organisms in several hot springs in Reykjadalur, Iceland. These hot springs exhibited temperatures well above 80 °C and pH values ranging from 2.0 to 4.5. To proof that nitrification actually took place under these extreme conditions, we measured gross nitrification rates by the isotope pool dilution method; we added 15N-labelled nitrate to the mud and followed the dilution of the label by nitrate production from ammonium either in situ (incubation in the hot spring) or under controlled conditions in the laboratory (at 80 °C). The nitrification rates in the hot springs ranged from 0.79 to 2.22 mg nitrate-N per L of mud and day. Controls, in which microorganisms were killed before the incubations, demonstrated that the nitrification was of biological origin. Addition of ammonium increased the gross nitrification rate approximately 3-fold, indicating that the nitrification was ammonium limited under the conditions used. Collectively, our study provides evidence that (1) AOA are present in hot springs and (2) that they are actively nitrifying. These findings have major implications for our understanding of nitrogen cycling of hot environments.

  13. An experimental investigation of straight and curved annular wall jets

    NASA Technical Reports Server (NTRS)

    Rodman, L. C.; Wood, N. J.; Roberts, L.

    1987-01-01

    Accurate turbulence measurements taken in wall jet flows are difficult to obtain, due to high intensity turbulence and problems in achieving two-dimensionality. The problem is compounded when streamwise curvature of the flow is introduced, since the jet entrainment and turbulence levels are greatly increased over the equivalent planar values. In this experiment, two-dimensional straight and curved incompressible wall jet flows are simulated by having a jet blow axially over a cylinder. Hot wire measurements and some Laser Doppler Velocimetry measurements are presented for straight and curved wall jet flows. The results for the straight wall showed good agreement between the annular flow data and the rectangular data taken by previous researchers. For the jets with streamwise curvature, there was agreement between the annular and corresponding rectangular jets for the flow region closest to the slot exit. An integral analysis was used as a simple technique to interpret the experimental results. Integral momentum calculations were performed for both straight and curved annular and two dimensional wall jets. The results of the calculation were used to identify transverse curvature parameters and to predict the values of those parameters which would delineate the region where the annular flow can satisfactorily simulate two dimensional flow.

  14. Hot isostatic pressing: Conference proceedings

    SciTech Connect

    Froes, F.H.; Hebeisen, J.; Widmer, R.

    1996-12-31

    The International Conference on Hot Isostatic Pressing was held on May 20-22, 1996, in Andover, Massachusetts. This conference discussed the state-of-the-art of hot isostatic pressing (HIP) and competing compaction techniques. HIP allows complex cost-effective near net shapes to be produced from powder products, densification of castings thereby enhancing performance, retention of metastable structures such as nano-sized grains, and even creative food processing. Sections in the conference covered such items as fundamentals, mathematical modeling, equipment and instrumentation, advanced materials and processes, composite materials, casting densification, surface treatments, HIP bonding, and competing technologies. Forty five papers were processed separately for inclusion on the data base.

  15. Hot Gas Halos in Galaxies

    SciTech Connect

    Mulchaey, John S.; Jeltema, Tesla E.

    2010-06-08

    We use Chandra and XMM-Newton to study how the hot gas content in early-type galaxies varies with environment. We find that the L{sub X}-L{sub K} relationship is steeper for field galaxies than for comparable galaxies in groups and clusters. This suggests that internal processes such as supernovae driven winds or AGN feedback may expel hot gas from low mass field galaxies. Such mechanisms are less effective in groups and clusters where the presence of an intragroup or intracluster medium may confine outflowing material.

  16. Foucault pendulum ``wall clock''

    NASA Astrophysics Data System (ADS)

    Crane, H. Richard

    1995-01-01

    Details are given for the construction of a 70-cm-long Foucault pendulum to be mounted on the wall, and for a simple modification that will make it display local clock time. The possibility of having a Foucault pendulum of such short length is the result of finding new or improved ways of reducing four perturbing effects that become more severe as the length is decreased. They relate to: precession due to ellipticity in the motion, the drive system for maintaining the amplitude, the means of limiting the growth of ellipticity, and the method of gripping the suspending wire at the top. With those improvements, successful Foucault operation was attained in pendulums as short as 15 cm, support to center of bob. Following that severe test, the length for the ``wall clock'' was set at a conservative 70 cm. At that length it is highly reliable, and accurate to within 2% when timed for the full revolution. Uniformity in rate when comparing different intervals of azimuth is of course less. A simple method of making the pendulum read local time is described. Two clocks, one in the author's office and one at home, have been in continuous operation for more than ten years.

  17. DEVELOPMENT OF METALLIC HOT GAS FILTERS

    SciTech Connect

    Anderson, I.E.; Gleeson, B.; Terpstra, R.L.

    2003-04-23

    Successful development of metallic filters with high temperature oxidation/corrosion resistance for fly ash capture is a key to enabling advanced coal combustion and power generation technologies. Compared to ceramic filters, metallic filters can offer increased resistance to impact and thermal fatigue, greatly improving filter reliability. A beneficial metallic filter structure, composed of a thin-wall (0.5mm) tube with uniform porosity (about 30%), is being developed using a unique spherical powder processing and partial sintering approach, combined with porous sheet rolling and resistance welding. Alloy choices based on modified superalloys, e.g., Ni-16Cr-4.5Al-3Fe (wt.%), are being tested in porous and bulk samples for oxide (typically alumina) scale stability in simulated oxidizing/sulfidizing atmospheres found in PFBC and IGCC systems at temperatures up to 850 C. Recent ''hanging o-ring'' exposure tests in actual combustion systems at a collaborating DOE site (EERC) have been initiated to study the combined corrosive effects from particulate deposits and hot exhaust gases. New studies are exploring the correlation between sintered microstructure, tensile strength, and permeability of porous sheet samples.

  18. Hot conditioning equipment conceptual design report

    SciTech Connect

    Bradshaw, F.W., Westinghouse Hanford

    1996-08-06

    This report documents the conceptual design of the Hot Conditioning System Equipment. The Hot conditioning System will consist of two separate designs: the Hot Conditioning System Equipment; and the Hot Conditioning System Annex. The Hot Conditioning System Equipment Design includes the equipment such as ovens, vacuum pumps, inert gas delivery systems, etc.necessary to condition spent nuclear fuel currently in storage in the K Basins of the Hanford Site. The Hot Conditioning System Annex consists of the facility of house the Hot Conditioning System. The Hot Conditioning System will be housed in an annex to the Canister Storage Building. The Hot Conditioning System will consist of pits in the floor which contain ovens in which the spent nuclear will be conditioned prior to interim storage.

  19. Menopausal hot flashes: Randomness or rhythmicity

    NASA Astrophysics Data System (ADS)

    Kronenberg, Fredi

    1991-10-01

    Menopausal hot flashes are episodes of flushing, increased heart rate, skin blood flow and skin temperature, and a sensation of heat. The thermoregulatory and cardiovascular concomitants of hot flashes are associated with peaks in the levels of various hormones and neurotransmitters in the peripheral circulation. Although hot flashes affect about 75% of women, and are the primary reason that women at menopause seek medical attention, the mechanism of hot flashes is still not understood. Hot flashes vary in frequency and intensity both within and between individuals, and have been thought of as occurring randomly. Yet, some women report that their hot flashes are worse at a particular time of day or year. Initial examination of subjects' recordings of their hot flashes showed diurnal patterns of hot flash occurrence. There also seems to be a diurnal rhythm of hot flash intensity. Continuous physiological monitoring of hot flashes is facilitating the analysis of these patterns, which is revealing circadian and ultradian periodicities. The occurrence of hot flashes can be modulated by external and internal factors, including ambient temperature and fever. Rhythms of thermoregulatory and endocrine functions also may influence hot flash patterns. Examination of the interrelationships between the various systems of the body involved in hot flashes, and a multidisciplinary approach to the analysis of hot flash patterns, will aid our understanding of this complex phenomenon.

  20. On the development of turbulent boundary layer with wall transpiration

    NASA Astrophysics Data System (ADS)

    Ferro, Marco; Downs, Robert S., III; Fallenius, Bengt E. G.; Fransson, Jens H. M.

    2015-11-01

    An experimental study of the development of the transpired boundary layer in zero pressure gradient is carried out on a 6.4 m long hydrodynamically smooth and perforated plate. The relatively longer development length of the present perforated plate compared to the ones used in previous studies allows us to investigate whether an asymptotic suction boundary layer with constant thickness is achieved for the turbulent state, analogously to what happens in the laminar state. Velocity profiles are obtained via hot-wire anemometry while the wall shear stress is measured at several streamwise locations with hot-film and wall-wire probes as well as with oil-film interferometry. The threshold suction coefficient above which relaminarization starts to occur is examined. The scaling of the mean velocity and of higher order velocity moments is discussed in light of the measured wall shear stress data. Support from the European Research Council of the Advanced Fluid Research On Drag reduction in Turbulence Experiments (AFRODITE) is acknowledged.

  1. Direct imaging of thermally driven domain wall motion in magnetic insulators.

    PubMed

    Jiang, Wanjun; Upadhyaya, Pramey; Fan, Yabin; Zhao, Jing; Wang, Minsheng; Chang, Li-Te; Lang, Murong; Wong, Kin L; Lewis, Mark; Lin, Yen-Ting; Tang, Jianshi; Cherepov, Sergiy; Zhou, Xuezhi; Tserkovnyak, Yaroslav; Schwartz, Robert N; Wang, Kang L

    2013-04-26

    Thermally induced domain wall motion in a magnetic insulator was observed using spatiotemporally resolved polar magneto-optical Kerr effect microscopy. The following results were found: (i) the domain wall moves towards hot regime; (ii) a threshold temperature gradient (5  K/mm), i.e., a minimal temperature gradient required to induce domain wall motion; (iii) a finite domain wall velocity outside of the region with a temperature gradient, slowly decreasing as a function of distance, which is interpreted to result from the penetration of a magnonic current into the constant temperature region; and (iv) a linear dependence of the average domain wall velocity on temperature gradient, beyond a threshold thermal bias. Our observations can be qualitatively explained using a magnonic spin transfer torque mechanism, which suggests the utility of magnonic spin transfer torque for controlling magnetization dynamics. PMID:23679764

  2. Support pedestals for interconnecting a cover and nozzle band wall in a gas turbine nozzle segment

    DOEpatents

    Yu, Yufeng Phillip; Itzel, Gary Michael; Webbon, Waylon Willard; Bagepalli, Radhakrishna; Burdgick, Steven Sebastian; Kellock, Iain Robertson

    2002-01-01

    A gas turbine nozzle segment has outer and inner band portions. Each band portion includes a nozzle wall, a cover and an impingement plate between the cover and nozzle wall defining two cavities on opposite sides of the impingement plate. Cooling steam is supplied to one cavity for flow through the apertures of the impingement plate to cool the nozzle wall. Structural pedestals interconnect the cover and nozzle wall and pass through holes in the impingement plate to reduce localized stress otherwise resulting from a difference in pressure within the chamber of the nozzle segment and the hot gas path and the fixed turbine casing surrounding the nozzle stage. The pedestals may be cast or welded to the cover and nozzle wall.

  3. Congenital lateral abdominal wall hernia.

    PubMed

    Montes-Tapia, Fernando; Cura-Esquivel, Idalia; Gutiérrez, Susana; Rodríguez-Balderrama, Isaías; de la O-Cavazos, Manuel

    2016-08-01

    Congenital abdominal wall defects that are located outside of the anterior wall are extremely rare and difficult to classify because there are no well accepted guidelines. There are two regions outside of the anterior wall: the flank or lateral wall; and the lumbar region. We report the case of a patient with an oval 3 cm-diameter hernia defect located above the anterior axillary line, which affects all layers of the muscular wall. An anorectal malformation consisting of a recto-vestibular fistula was also identified, and chest X-ray showed dextrocardia. The suggested treatment is repair of the defect before 1 year of age. Given that the anomalies described may accompany lateral abdominal wall hernia, it is important to diagnose and treat the associated defects.

  4. Preliminary safety analysis report for the Auxiliary Hot Cell Facility, Sandia National Laboratories, Albuquerque, New Mexico

    SciTech Connect

    OSCAR,DEBBY S.; WALKER,SHARON ANN; HUNTER,REGINA LEE; WALKER,CHERYL A.

    1999-12-01

    The Auxiliary Hot Cell Facility (AHCF) at Sandia National Laboratories, New Mexico (SNL/NM) will be a Hazard Category 3 nuclear facility used to characterize, treat, and repackage radioactive and mixed material and waste for reuse, recycling, or ultimate disposal. A significant upgrade to a previous facility, the Temporary Hot Cell, will be implemented to perform this mission. The following major features will be added: a permanent shield wall; eight floor silos; new roof portals in the hot-cell roof; an upgraded ventilation system; and upgraded hot-cell jib crane; and video cameras to record operations and facilitate remote-handled operations. No safety-class systems, structures, and components will be present in the AHCF. There will be five safety-significant SSCs: hot cell structure, permanent shield wall, shield plugs, ventilation system, and HEPA filters. The type and quantity of radionuclides that could be located in the AHCF are defined primarily by SNL/NM's legacy materials, which include radioactive, transuranic, and mixed waste. The risk to the public or the environment presented by the AHCF is minor due to the inventory limitations of the Hazard Category 3 classification. Potential doses at the exclusion boundary are well below the evaluation guidelines of 25 rem. Potential for worker exposure is limited by the passive design features incorporated in the AHCF and by SNL's radiation protection program. There is no potential for exposure of the public to chemical hazards above the Emergency Response Protection Guidelines Level 2.

  5. Hot subdwarfs in globular clusters

    SciTech Connect

    Drukier, G.A.; Fahlman, G.G.; Richter, H.B. )

    1989-07-01

    Spectra of faint blue stars in the globular clusters M71 and M4 are presented. The spectra suggest that they are hot subdwarfs. Arguments in favor of membership in their respective clusters and comments regarding their evolutionary status are given. 18 refs.

  6. Origins of Hot Jupiters, Revisited

    NASA Astrophysics Data System (ADS)

    Batygin, Konstantin; Bodenheimer, Peter; Laughlin, Greg

    2016-05-01

    Hot Jupiters, giant extrasolar planets with orbital periods less than ~10 days, have long been thought to form at large radial distances (a > 2AU) in protoplanetary disks, only to subsequently experience large-scale inward migration to the small orbital radii at which they are observed. Here, we propose that a substantial fraction of the hot Jupiter population forms in situ, with the Galactically prevalent short-period super-Earths acting as the source population. Our calculations suggest that under conditions appropriate to the inner regions of protoplanetary disks, rapid gas accretion can be initiated for solid cores of 10-20 Earth masses, in line with the conventional picture of core-nucleated accretion. The planetary conglomeration process, coupled with subsequent gravitational contraction and spin down of the host star, drives sweeping secular resonances through the system, increasing the mutual inclinations of exterior, low-mass companions to hot Jupiters. Accordingly, this formation scenario leads to testable consequences, including the expectation that hot Jupiters should frequently be accompanied by additional non-transiting planets, reminiscent of those observed in large numbers by NASA’s Kepler Mission and Doppler velocity surveys. High-precision radial velocity monitoring provides the best prospect for their detection.

  7. Origins of Hot Jupiters, Revisited

    NASA Astrophysics Data System (ADS)

    Batygin, Konstantin; Bodenheimer, Peter; Laughlin, Greg

    2015-12-01

    Hot Jupiters, giant extrasolar planets with orbital periods less than ~10 days, have long been thought to form at large radial distances (a > 2AU) in protostellar disks, only to subsequently experience large-scale inward migration to the small orbital radii at which they are observed. Here, we propose that a substantial fraction of the hot Jupiter population forms in situ, with the Galactically prevalent short-period super-Earths acting as the source population. Our calculations suggest that under conditions appropriate to the inner regions of protostellar disks, rapid gas accretion can be initiated for solid cores of 10-20 Earth masses, in line with the conventional picture of core-nucleated accretion. This formation scenario leads to testable consequences, including the expectation that hot Jupiters should frequently be accompanied by additional planets, reminiscent of those observed in large numbers by NASA’s Kepler Mission and Doppler velocity surveys. However, dynamical interactions during the early stages of planetary systems' evolutionary lifetimes tend to increase the mutual inclinations of exterior, low-mass companions to hot Jupiters, making transits rare. High-precision radial velocity monitoring provides the best prospect for their detection.

  8. Advanced hot gas filter development

    SciTech Connect

    McMahon, T.J.

    1998-12-31

    Advanced coal-based power generation systems require hot gas cleanup under high-temperature, high-pressure process conditions in order to realize high efficiency and superior environmental performance. A key component of Integrated Gasification Combined Cycle and Pressurized Fluidized Bed Combustion systems is the hot gas filtration system, which removes particulate matter from the gas stream before it enters the gas turbine. The US DOE is currently sponsoring a program to develop and test hot gas filtration systems, demonstrating their reliability and commercial readiness. Reliability of individual filter elements is a major factor in determining the overall system reliability, and testing has shown that conventional ceramic filter elements are subject to brittle failure and thermal stress damage. In order to increase filter element reliability, a program was initiated to develop ceramic and metal filter elements resistant to brittle failure and thermal stress damage. Filter elements have been developed using advanced materials including continuous fiber ceramic composites, other novel ceramics, and corrosion resistant metals. The general approach taken under this program has been to first develop porous filter media from advanced materials that meet permeability and strength requirements, followed by fabrication of porous media into full scale filter elements. Filter elements and filter media were subjected to laboratory scale corrosion and filtration testing. Filter elements successfully passing laboratory testing have been tested under pilot scale conditions. This paper will summarize the development and testing of these advanced hot gas filters.

  9. Solar Technician Program Blows Hot

    ERIC Educational Resources Information Center

    Ziegler, Peg Moran

    1977-01-01

    A training program for solar heating technicians was initiated at Sonoma State College's School of Environmental Studies for CETA applicants. Among the projects designed and built were a solar alternative energy center, a solar hot water system, and a solar greenhouse. (MF)

  10. Solar hot-water system

    NASA Technical Reports Server (NTRS)

    1979-01-01

    Design data brochure describes domestic solar water system that uses direct-feed system designed to produce 80 gallons of 140 F hot water per day to meet needs of single family dwelling. Brochure also reviews annual movements of sun relative to earth and explains geographic considerations in collector orientation and sizing.

  11. Hot, Cold, and Really Cold.

    ERIC Educational Resources Information Center

    Leyden, Michael

    1997-01-01

    Describes a physics experiment investigating temperature prediction and the relationship between the physical properties of heat units, melting, dissolving, states of matter, and energy loss. Details the experimental setup, which requires hot and cold water, a thermometer, and ice. Notes that the experiment employs a deliberate counter-intuitive…

  12. Solar Hot Water Hourly Simulation

    2009-12-31

    The Software consists of a spreadsheet written in Microsoft Excel which provides an hourly simulation of a solar hot water heating system (including solar geometry, solar collector efficiency as a function of temperature, energy balance on storage tank and lifecycle cost analysis).

  13. Defect structure of semiconducting and insulating epitaxial oxides. Progress report, May 1, 1993--April 30, 1994

    SciTech Connect

    Wessels, B.W.

    1994-03-01

    The investigation has focused on epitaxial growth of BaSrTiO{sub 3} over the entire solid solution range, point defects in epitaxial BaTiO{sub 3} using temperature-dependent conductivity and deep-level optical spectroscopy, and their nonlinear optical properties.

  14. Epitaxy and fiber texture of Pb films on mica and glass.

    NASA Technical Reports Server (NTRS)

    Wyatt, P. W.; Yelon, A.

    1972-01-01

    We report the production of (111) epitaxial Pb films on mica and (111) textured Pb films on mica and glass. Film structure is studied by reflection electron diffraction and by etching and optical microscopy. Thin (about 1000 A) epitaxial films are found to be doubly positioned. Reorientation during growth of thicker films leads to single positioning in areas several tenths of a millimeter across.

  15. Growth of (111) GaAs on (111) Si using molecular-beam epitaxy

    NASA Technical Reports Server (NTRS)

    Radhakrishnan, G.; Liu, J.; Grunthaner, F.; Katz, J.; Morkoc, H.

    1988-01-01

    (111) GaAs layers have been grown epitaxially on (111) Si wafers, both on-axis as well as 3-deg off-axis towards the 1 -1 0 direction, using molecular-beam epitaxy. The grown layers have been characterized by scanning electron microscopy, X-ray diffraction, and transmission electron microscopy.

  16. Epitaxial ternary nitride thin films prepared by a chemical solution method

    SciTech Connect

    Luo, Hongmei; Feldmann, David M; Wang, Haiyan; Bi, Zhenxing

    2008-01-01

    It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

  17. Evaluation and verification of epitaxial process sequence for silicon solar cell production

    NASA Technical Reports Server (NTRS)

    Redfield, D.

    1981-01-01

    The applicability of solar cell and module processing sequences, to be used on lower cost epitaxial silicon wafers was evaluated. The extent to which the process sequences perform effectively when applied to film solar cells formed by epitaxial deposition of Si on potentially inexpensive substrates of upgraded metallurgical grade Si is examined. It is concluded that these substrates are satisfactory in their cell performance.

  18. Dynamical domain wall and localization

    NASA Astrophysics Data System (ADS)

    Toyozato, Yuta; Higuchi, Masafumi; Nojiri, Shin'ichi

    2016-03-01

    Based on the previous works (Toyozato et al., 2013 [24]; Higuchi and Nojiri, 2014 [25]), we investigate the localization of the fields on the dynamical domain wall, where the four-dimensional FRW universe is realized on the domain wall in the five-dimensional space-time. Especially we show that the chiral spinor can localize on the domain wall, which has not been succeeded in the past works as the seminal work in George et al. (2009) [23].

  19. Asymptotic dynamics of monopole walls

    NASA Astrophysics Data System (ADS)

    Cross, R.

    2015-08-01

    We determine the asymptotic dynamics of the U(N) doubly periodic BPS monopole in Yang-Mills-Higgs theory, called a monopole wall, by exploring its Higgs curve using the Newton polytope and amoeba. In particular, we show that the monopole wall splits into subwalls when any of its moduli become large. The long-distance gauge and Higgs field interactions of these subwalls are Abelian, allowing us to derive an asymptotic metric for the monopole wall moduli space.

  20. Movement of magnetic domain walls induced by single femtosecond laser pulses

    NASA Astrophysics Data System (ADS)

    Sandig, O.; Shokr, Y. A.; Vogel, J.; Valencia, S.; Kronast, F.; Kuch, W.

    2016-08-01

    We present a microscopic investigation of how the magnetic domain structure in ultrathin films changes after direct excitation by single ultrashort laser pulses. Using photoelectron emission microscopy in combination with x-ray magnetic circular dichroism in the resonant absorption of soft x rays, we find that individual laser pulses of ≈60 fs duration and a central wavelength of 800 nm lead to clear changes in the domain structure of a Co layer of three atomic monolayers thickness in an epitaxial Co/Cu/Ni trilayer on a Cu(001) single-crystal substrate. A relatively small enhancement of the sample base temperature by 40 K is sufficient to lower the threshold of laser fluence for domain wall motion by about a factor of two. Pump-probe measurements with a laser fluence just below this threshold indicate that the laser-induced demagnetization of the sample is far from complete in these experiments. Although the domain wall motion appears similar to thermal domain wall fluctuations, quantitatively it cannot be explained by pure thermal activation of domain wall motion by the transient rise of sample temperature after the laser pulse, but it is likely to be triggered by a laser-induced depinning of domain walls.