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Sample records for hot wall epitaxial

  1. Hydride vapor phase epitaxy of AlN using a high temperature hot-wall reactor

    NASA Astrophysics Data System (ADS)

    Baker, Troy; Mayo, Ashley; Veisi, Zeinab; Lu, Peng; Schmitt, Jason

    2014-10-01

    Aluminum nitride (AlN) was grown on c-plane sapphire substrates by hydride vapor phase epitaxy (HVPE). The experiments utilized a two zone inductively heated hot-wall reactor. The surface morphology, crystal quality, and growth rate were investigated as a function of growth temperature in the range of 1450-1575 °C. AlN templates grown to a thickness of 1 μm were optimized with double axis X-ray diffraction (XRD) rocking curve full width half maximums (FWHMs) of 135″ for the (002) and 513″ for the (102).

  2. Roughness of CdTe thin films grown on glass by hot wall epitaxy

    NASA Astrophysics Data System (ADS)

    Leal, F. F.; Ferreira, S. O.; Menezes-Sobrinho, I. L.; Faria, T. E.

    2005-01-01

    Cadmium telluride films were grown on glass substrates using the hot wall epitaxy (HWE) technique. The samples were polycrystalline with a preferential (111) orientation. Scanning electron micrographs reveal a grain size between 0.1 and 0.5 µm. The surface morphology of the samples was studied by measuring the roughness profile using a stylus profiler. The roughness as a function of growth time and scale size were investigated to determine the growth and roughness exponents, β and α, respectively. From the results we can conclude that the growth surface has a self-affine character with a roughness exponent α equal to 0.69 ± 0.03 and almost independent of growth time. The growth exponent β was equal to 0.38 ± 0.06. These values agree with that determined previously for CdTe(111) films grown on GaAs(100).

  3. Characterization of epitaxial films of CdTe and CdS grown by hot-wall epitaxy

    NASA Astrophysics Data System (ADS)

    Sitter, H.; Humenberger, J.; Huber, W.; Lopez-Otero, A.

    1983-09-01

    Layers of n-type CdTe and CdS doped with indium are grown on single-crystal BaF2 and SrF2 substrates, respectively, using the method of hot-wall epitaxy. The electron concentrations are typically up to 2 x 10 to the 17th/cu cm in CdTe and 3 x 10 to the 18th/cu cm in CdS. Mobilities of 600 sq cm/Vs for CdTe and 230 sq cm/Vs for CdS are measured at room temperature. The mobility of some of the samples is found to increase exponentially with temperature in the range from 300 to 100 K. It is noted that this effect can be explained by means of a grain boundary model. In other samples, however, bulk scattering mechanisms figure prominently for tempperatures lower than 100 K. Attention is also given to mobility as a function of grain size. Deep level transient spectroscopy measurements are made in characterizing the carrier traps in the CdTe films. Six different defect levels are found in the upper half of the forbidden gap. It is determined that the concentration of the defects and their distribution with depth away from the interface in heterojunction diodes are a function of the growth conditions.

  4. High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

    NASA Astrophysics Data System (ADS)

    Chowdhury, Iftekhar; Chandrasekhar, M. V. S.; Klein, Paul B.; Caldwell, Joshua D.; Sudarshan, Tangali

    2011-02-01

    Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0 0 0 1) 8° off-axis substrates. We discuss the use of dichlorosilane as the Si-precursor for 4H-SiC epitaxial growth as it provides the most direct decomposition route into SiCl 2, which is the predominant growth species in chlorinated chemistries. A specular surface morphology was attained by limiting the hydrogen etch rate until the system was equilibrated at the desired growth temperature. The RMS roughness of the grown films ranged from 0.5-2.0 nm with very few morphological defects (carrots, triangular defects, etc.) being introduced, while enabling growth rates of 30-100 μm/h, 5-15 times higher than most conventional growths. Site-competition epitaxy was observed over a wide range of C/Si ratios, with doping concentrations <1×10 14 cm -3 being recorded. X-ray rocking curves indicated that the epilayers were of high crystallinity, with linewidths as narrow as 7.8 arcsec being observed, while microwave photoconductive decay (μPCD) measurements indicated that these films had high injection (ambipolar) carrier lifetimes in the range of 2 μs.

  5. Influence of substrate materials on the properties of CdTe thin films grown by hot-wall epitaxy

    NASA Astrophysics Data System (ADS)

    Bilevych, Ye.; Soshnikov, A.; Darchuk, L.; Apatskaya, M.; Tsybrii, Z.; Vuychik, M.; Boka, A.; Sizov, F.; Boelling, O.; Sulkio-Cleff, B.

    2005-02-01

    Growth of high-quality CdTe thin films by hot-wall epitaxy (HWE) under different temperature conditions and the control of their physical, electrical and structural properties have been examined by various ways. CdTe (1 1 0), Zn 0.04Cd 0.96Te (1 1 1), Hg 0.2Cd 0.8Te (1 1 1), Si (1 1 1) and BaF 2 (1 1 1) were used as substrates. The obtained films have the cut-off wavelength at 0.84-0.85 μm and the transmission of about 55-60% out of the fundamental absorption domain. The current-voltage investigations have shown that the contact properties strongly depend on the contact material and contact fabrication method and less depend on substrate materials. The film-specific resistances (4-7)×10 4 Ω cm were determined. The CdTe deposition (layer thickness about 1000 Å) on Cd xHg 1-xTe resulted in significant increase in photodiodes electrical parameters. All samples showed the crystalline structure according to the XRD data with strong influence on lattice mismatch between CdTe and substrate materials. Atomic force microscope (AFM) investigations have shown a smooth and defect-free surface with a roughness range of 15-100 nm for 50 μm of basic length.

  6. Element substitution from substrates in Bi2Se3, Bi2Te3 and Sb2Te3 overlayers deposited by hot wall epitaxy

    NASA Astrophysics Data System (ADS)

    Takagaki, Y.; Jahn, U.; Jenichen, B.; Berlin, K.; Kong, X.; Biermann, K.

    2014-09-01

    In depositing Bi2Se3, Bi2Te3 or Sb2Te3 layers on certain substrates by hot wall epitaxy, the Bi and Sb atoms in the layers are replaced by the atoms supplied from the substrates. We extend our exploration on this substitution phenomenon for a number of combinations of the layer and the substrate to infer the factors that determine the occurrence of the substitution. Using a series of Ga- and In-based III-V substrates, it is evidenced that the group III atoms substitute the group V overlayer atoms when the bonds in the substrates are weak. We demonstrate that Ag triggers the substitution more effectively than Cu as a catalyst. The competition between the catalyst-induced substitutions on ternary alloy substrates shows that the dependence on the bond strength is not as strong as to be exclusive. Additionally, defectiveness around the interface between a semicoherently grown α-In2Se3 layer produced by the substitution and the InAs substrate is demonstrated. The cathodeluminescence properties are also provided focusing on the dependence on the phase of In2Se3.

  7. Lateral Growth Expansion of 4H/6H-SiC m-plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy

    NASA Technical Reports Server (NTRS)

    Trunek, Andrew J.; Neudeck, Philip G.; Woodworth, Andrew A.; Powell, J. A.; Spry, David J.; Raghothamachar, Balaji; Dudley, Michael

    2011-01-01

    Lateral expansion of small mixed polytype 4H/6H-SiC slivers were realized by hot wall chemical vapor deposition (HWCVD). Small slivers cut from m-oriented ..11..00.. SiC boule slices containing regions of 4H and 6H SiC were exposed to HWCVD conditions using standard silane/propane chemistry for a period of up to eight hours. The slivers exhibited approximately 1500 microns (1.5 mm) of total lateral expansion. Initial analysis by synchrotron white beam x-ray topography (SWBXT) confirms, that the lateral growth was homoepitaxial, matching the polytype of the respective underlying region of the seed sliver.

  8. Study of defect structures in 6H-SiC a/m-plane pseudofiber crystals grown by hot-wall CVD epitaxy

    DOE PAGES

    Goue, Ouloide Y.; Raghothamachar, Balaji; Yang, Yu; ...

    2015-11-25

    Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC proposed by researchers at NASA Glenn Research Center, called large tapered crystal (LTC) growth, based on axial fiber growth followed by lateral expansion, could produce SiC boules with potentially as few as one threading screw dislocation per wafer. In this study, the lateral expansion aspect of LTC growth is addressed through analysis of lateral growth of 6H-SiC a/m-plane seed crystals by hot-wall chemical vapor deposition. Preliminary synchrotron white-beam x-ray topography (SWBXT) indicates that the as-grown boules match themore » polytype structure of the underlying seed and have a faceted hexagonal morphology with a strain-free surface marked by steps. SWBXT Laue diffraction patterns of transverse and axial slices of the boules reveal streaks suggesting the existence of stacking faults/polytypes, and this is confirmed by micro-Raman spectroscopy. Transmission x-ray topography of both transverse and axial slices reveals inhomogeneous strains at the seed–epilayer interface and linear features propagating from the seed along the growth direction. Micro-Raman mapping of an axial slice reveals that the seed contains high stacking disorder, while contrast extinction analysis (g·b and g·b×l) of the linear features reveals that these are mostly edge-type basal plane dislocations. Further high-resolution transmission electron microscopy investigation of the seed–homoepilayer interface also reveals nanobands of different SiC polytypes. A model for their formation mechanism is proposed. Lastly, the implication of these results for improving the LTC growth process is addressed.« less

  9. Study of defect structures in 6H-SiC a/m-plane pseudofiber crystals grown by hot-wall CVD epitaxy

    SciTech Connect

    Goue, Ouloide Y.; Raghothamachar, Balaji; Yang, Yu; Guo, Jianqiu; Dudley, Michael; Kisslinger, Kim; Trunek, Andrew J.; Neudeck, Philip G.; Spry, David J.; Woodworth, Andrew A.

    2015-11-25

    Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC proposed by researchers at NASA Glenn Research Center, called large tapered crystal (LTC) growth, based on axial fiber growth followed by lateral expansion, could produce SiC boules with potentially as few as one threading screw dislocation per wafer. In this study, the lateral expansion aspect of LTC growth is addressed through analysis of lateral growth of 6H-SiC a/m-plane seed crystals by hot-wall chemical vapor deposition. Preliminary synchrotron white-beam x-ray topography (SWBXT) indicates that the as-grown boules match the polytype structure of the underlying seed and have a faceted hexagonal morphology with a strain-free surface marked by steps. SWBXT Laue diffraction patterns of transverse and axial slices of the boules reveal streaks suggesting the existence of stacking faults/polytypes, and this is confirmed by micro-Raman spectroscopy. Transmission x-ray topography of both transverse and axial slices reveals inhomogeneous strains at the seed–epilayer interface and linear features propagating from the seed along the growth direction. Micro-Raman mapping of an axial slice reveals that the seed contains high stacking disorder, while contrast extinction analysis (g·b and g·b×l) of the linear features reveals that these are mostly edge-type basal plane dislocations. Further high-resolution transmission electron microscopy investigation of the seed–homoepilayer interface also reveals nanobands of different SiC polytypes. A model for their formation mechanism is proposed. Lastly, the implication of these results for improving the LTC growth process is addressed.

  10. Structural Characterization of Lateral-grown 6H-SiC am-plane Seed Crystals by Hot Wall CVD Epitaxy

    NASA Technical Reports Server (NTRS)

    Goue, Ouloide Yannick; Raghothamachar, Balaji; Dudley, Michael; Trunek, Andrew J.; Neudeck, Philip G.; Woodworth, Andrew A.; Spry, David J.

    2014-01-01

    The performance of commercially available silicon carbide (SiC) power devices is limited due to inherently high density of screw dislocations (SD), which are necessary for maintaining polytype during boule growth and commercially viable growth rates. The NASA Glenn Research Center (GRC) has recently proposed a new bulk growth process based on axial fiber growth (parallel to the c-axis) followed by lateral expansion (perpendicular to the c-axis) for producing multi-faceted m-plane SiC boules that can potentially produce wafers with as few as one SD per wafer. In order to implement this novel growth technique, the lateral homoepitaxial growth expansion of a SiC fiber without introducing a significant number of additional defects is critical. Lateral expansion is being investigated by hot wall chemical vapor deposition (HWCVD) growth of 6H-SiC am-plane seed crystals (0.8mm x 0.5mm x 15mm) designed to replicate axially grown SiC single crystal fibers. The post-growth crystals exhibit hexagonal morphology with approximately 1500 m (1.5 mm) of total lateral expansion. Preliminary analysis by synchrotron white beam x-ray topography (SWBXT) confirms that the growth was homoepitaxial, matching the polytype of the respective underlying region of the seed crystal. Axial and transverse sections from the as grown crystal samples were characterized in detail by a combination of SWBXT, transmission electron microscopy (TEM) and Raman spectroscopy to map defect types and distribution. X-ray diffraction analysis indicates the seed crystal contained stacking disorders and this appears to have been reproduced in the lateral growth sections. Analysis of the relative intensity for folded transverse acoustic (FTA) and optical (FTO) modes on the Raman spectra indicate the existence of stacking faults. Further, the density of stacking faults is higher in the seed than in the grown crystal. Bundles of dislocations are observed propagating from the seed in m-axis lateral directions

  11. Hot Wall Thickness Variation Measurement System

    DTIC Science & Technology

    1979-06-01

    Subtltia) HOT WALL THICKNESS VARIATION MEASUREMENT SYSTEM 7. AUTHORfa; 3. J. KRUPSKI 9 . PERFORMING ORGANIZATION NAME AND ADDRESS PRODUCT...THE FORGING 3. ULTRASONICS ON A HOT TUBE 4. SYSTEt-l DESCRIPTION 5. TESTING RESULTS 6. CONCLUSIONS 7. HffLEMENTATION PAGE i ii 1 2 4 6 9 ...printed out. The grip procedure was repeated toward the breech end of the forging with good results. The third and 9 breech end prints were at about

  12. Modeling of Fuel Film Cooling on Chamber Hot Wall

    DTIC Science & Technology

    2014-07-01

    chemistry of hydrocarbon combustion, pyrolysis, soot formation, and soot oxidation can involve hundreds of species and thousands of reactions . The...equilibrium chemistry is constructed to simulate hydrocarbon fuel film cooling of the hot-gas side of liquid rocket engine chamber walls. The predictive...equilibrium chemistry is constructed to simulate hydrocarbon fuel film cooling of the hot-gas side of liquid rocket engine chamber walls. The predictive

  13. 15. View of interior, north wall of hot cell featuring ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    15. View of interior, north wall of hot cell featuring radioactive materials containment box, facing east - Nevada Test Site, Reactor Maintenance & Disassembly Complex, Junior Hot Cell, Jackass Flats, Area 25, South of intersection of Roads F & G, Mercury, Nye County, NV

  14. Modeling of Fuel Film Cooling on Chamber Hot Wall

    DTIC Science & Technology

    2013-12-01

    causes large variations in fluid properties, reaction rates and composition. The detailed chemistry of hydrocarbon combustion, pyrolysis, soot...14068 14. ABSTRACT A numerical model is constructed to simulate hydrocarbon fuel film cooling of the hot-gas side of liquid rocket engine chamber walls...Laboratory Edwards AFB, CA ABSTRACT A numerical model is constructed to simulate hydrocarbon fuel film cooling of the hot-gas side of liquid rocket

  15. Epitaxial Engineering of Domain Walls and Distortions in Ferrite Heterostructures

    NASA Astrophysics Data System (ADS)

    Mundy, Julia

    The defining feature of ferroics is the ability of an external stimulus--electric field, magnetic field, or stress--to move domain walls. These topological defects and their motion enables many useful attributes, e.g., memories that can be reversibly written between stable states as well as enhanced conductivity, permittivity, permeability, and piezoelectricity. Although methods are known to drastically increase their density, the placement of domain walls with atomic precision has until now evaded control. Here we engineer the location of domain walls with monolayer precision and exploit this ability to create a novel multiferroic in which ferroelectricity enhances magnetism at all relevant length scales. Starting with hexagonal LuFeO3, a geometric ferroelectric with the greatest known planar rumpling, we introduce individual extra monolayers of FeO during growth to construct formula-unit-thick syntactic layers of ferrimagnetic LuFe2O4 within the LuFeO3 matrix, i.e., (LuFeO3)m /(LuFe2O4)1 superlattices. The severe rumpling imposed by the neighboring LuFeO3 drives the ferrimagnetic LuFe2O4 into a simultaneously ferroelectric state and reduces the LuFe2O4 spin frustration. This increases the magnetic transition temperature significantly--to 281 K for the (LuFeO3)9 /(LuFe2O4)1 superlattice. Moreover, LuFeO3 can form charged ferroelectric domain walls, which we align to the LuFe2O4 bilayers with monolayer precision. Charge transfers to these domain walls to alleviate the otherwise electrostatically unstable polarization arrangement, further boosting the magnetic moment. Our results demonstrate the utility of combining ferroics at the atomic-layer level with attention to domain walls, geometric frustration and polarization doping to create multiferroics by design.

  16. Stress analysis for wall structure in mobile hot cell design

    SciTech Connect

    Bahrin, Muhammad Hannan Rahman, Anwar Abdul Hamzah, Mohd Arif Mamat, Mohd Rizal; Azman, Azraf; Hasan, Hasni

    2016-01-22

    Malaysian Nuclear Agency is developing a Mobile Hot Cell (MHC) in order to handle and manage Spent High Activity Radioactive Sources (SHARS) such as teletherapy heads and irradiators. At present, there are only two units of MHC in the world, in South Africa and China. Malaysian Mobile Hot cell is developed by Malaysian Nuclear Agency with the assistance of IAEA expert, based on the design of South Africa and China, but with improved features. Stress analysis has been performed on the design in order to fulfil the safety requirement in operation of MHC. This paper discusses the loading analysis effect from the sand to the MHC wall structure.

  17. Artificial chemical and magnetic structure at the domain walls of an epitaxial oxide

    NASA Astrophysics Data System (ADS)

    Farokhipoor, S.; Magén, C.; Venkatesan, S.; Íñiguez, J.; Daumont, C. J. M.; Rubi, D.; Snoeck, E.; Mostovoy, M.; de Graaf, C.; Müller, A.; Döblinger, M.; Scheu, C.; Noheda, B.

    2014-11-01

    Progress in nanotechnology requires new approaches to materials synthesis that make it possible to control material functionality down to the smallest scales. An objective of materials research is to achieve enhanced control over the physical properties of materials such as ferromagnets, ferroelectrics and superconductors. In this context, complex oxides and inorganic perovskites are attractive because slight adjustments of their atomic structures can produce large physical responses and result in multiple functionalities. In addition, these materials often contain ferroelastic domains. The intrinsic symmetry breaking that takes place at the domain walls can induce properties absent from the domains themselves, such as magnetic or ferroelectric order and other functionalities, as well as coupling between them. Moreover, large domain wall densities create intense strain gradients, which can also affect the material's properties. Here we show that, owing to large local stresses, domain walls can promote the formation of unusual phases. In this sense, the domain walls can function as nanoscale chemical reactors. We synthesize a two-dimensional ferromagnetic phase at the domain walls of the orthorhombic perovskite terbium manganite (TbMnO3), which was grown in thin layers under epitaxial strain on strontium titanate (SrTiO3) substrates. This phase is yet to be created by standard chemical routes. The density of the two-dimensional sheets can be tuned by changing the film thickness or the substrate lattice parameter (that is, the epitaxial strain), and the distance between sheets can be made as small as 5 nanometres in ultrathin films, such that the new phase at domain walls represents up to 25 per cent of the film volume. The general concept of using domain walls of epitaxial oxides to promote the formation of unusual phases may be applicable to other materials systems, thus giving access to new classes of nanoscale materials for applications in nanoelectronics and

  18. Artificial chemical and magnetic structure at the domain walls of an epitaxial oxide.

    PubMed

    Farokhipoor, S; Magén, C; Venkatesan, S; Íñiguez, J; Daumont, C J M; Rubi, D; Snoeck, E; Mostovoy, M; de Graaf, C; Müller, A; Döblinger, M; Scheu, C; Noheda, B

    2014-11-20

    Progress in nanotechnology requires new approaches to materials synthesis that make it possible to control material functionality down to the smallest scales. An objective of materials research is to achieve enhanced control over the physical properties of materials such as ferromagnets, ferroelectrics and superconductors. In this context, complex oxides and inorganic perovskites are attractive because slight adjustments of their atomic structures can produce large physical responses and result in multiple functionalities. In addition, these materials often contain ferroelastic domains. The intrinsic symmetry breaking that takes place at the domain walls can induce properties absent from the domains themselves, such as magnetic or ferroelectric order and other functionalities, as well as coupling between them. Moreover, large domain wall densities create intense strain gradients, which can also affect the material's properties. Here we show that, owing to large local stresses, domain walls can promote the formation of unusual phases. In this sense, the domain walls can function as nanoscale chemical reactors. We synthesize a two-dimensional ferromagnetic phase at the domain walls of the orthorhombic perovskite terbium manganite (TbMnO3), which was grown in thin layers under epitaxial strain on strontium titanate (SrTiO3) substrates. This phase is yet to be created by standard chemical routes. The density of the two-dimensional sheets can be tuned by changing the film thickness or the substrate lattice parameter (that is, the epitaxial strain), and the distance between sheets can be made as small as 5 nanometres in ultrathin films, such that the new phase at domain walls represents up to 25 per cent of the film volume. The general concept of using domain walls of epitaxial oxides to promote the formation of unusual phases may be applicable to other materials systems, thus giving access to new classes of nanoscale materials for applications in nanoelectronics and

  19. Chirality-Controlled Growth of Single-Wall Carbon Nanotubes Using Vapor Phase Epitaxy: Mechanistic Understanding and Scalable Production

    DTIC Science & Technology

    2016-09-15

    period, that is, growth plus termination, we assume the average growth rate (R̅t) of a (n, m) SWCNT at time t follows exponential kinetics ?̅?...AFRL-AFOSR-VA-TR-2016-0319 Chirality-Controlled Growth of Single-Wall Carbon Nanotubes Using Vapor Phase Epitaxy: Mechanistic Understanding and...controlled growth of single-wall carbon nanotubes using vapor phase epitaxy: mechanistic understanding and scalable production FA9550-14-1-0115 Zhou

  20. Directional sensitivity of wall mounted hot-film gauges

    NASA Astrophysics Data System (ADS)

    Elvery, David G.; Bremhorst, Klaus

    1996-10-01

    The directional sensitivity of a constant temperature, thin, wall mounted hot-film gauge with respect to variations in yaw angle is investigated. Results obtained for the response of a hot-film gauge in a boundary layer flow fit the correlation between the effective cooling velocity for a hot-wire gauge and the yaw angle suggested by other workers. The yaw factor 0957-0233/7/10/011/img1 used in this correlation is typically less than 1.0. Results presented for the hot-film gauge in a boundary layer indicate that the yaw factor depends on both the distance into the boundary layer and the magnitude of the free stream velocity. At some velocity, close to zero, the results predict a yaw factor greater than unity. Computer simulations using the 0957-0233/7/10/011/img2 turbulence model are presented which verify this prediction. Yaw factors greater than one result because diffusion from the edges of the gauge becomes significant at low velocities with respect to the total heat transferred.

  1. Chirality-dependent vapor-phase epitaxial growth and termination of single-wall carbon nanotubes.

    PubMed

    Liu, Bilu; Liu, Jia; Tu, Xiaomin; Zhang, Jialu; Zheng, Ming; Zhou, Chongwu

    2013-09-11

    Structurally uniform and chirality-pure single-wall carbon nanotubes are highly desired for both fundamental study and many of their technological applications, such as electronics, optoelectronics, and biomedical imaging. Considerable efforts have been invested in the synthesis of nanotubes with defined chiralities by tuning the growth recipes but the approach has only limited success. Recently, we have shown that chirality-pure short nanotubes can be used as seeds for vapor-phase epitaxial cloning growth, opening up a new route toward chirality-controlled carbon nanotube synthesis. Nevertheless, the yield of vapor-phase epitaxial growth is rather limited at the present stage, due in large part to the lack of mechanistic understanding of the process. Here we report chirality-dependent growth kinetics and termination mechanism for the vapor-phase epitaxial growth of seven single-chirality nanotubes of (9, 1), (6, 5), (8, 3), (7, 6), (10, 2), (6, 6), and (7, 7), covering near zigzag, medium chiral angle, and near armchair semiconductors, as well as armchair metallic nanotubes. Our results reveal that the growth rates of nanotubes increase with their chiral angles while the active lifetimes of the growth hold opposite trend. Consequently, the chirality distribution of a nanotube ensemble is jointly determined by both growth rates and lifetimes. These results correlate nanotube structures and properties with their growth behaviors and deepen our understanding of chirality-controlled growth of nanotubes.

  2. Characterization of hot wall grown silver phthalocyanine films

    NASA Astrophysics Data System (ADS)

    Gupta, Himani; Bedi, R. K.; Mahajan, Aman

    2007-10-01

    Silver phthalocyanine (AgPc) has attracted considerable interest because of its outstanding chemical stability, optical and electrical properties, and wide variety of potential applications in modern optical recording and optoelectronic devices. To improve the performance of devices based on AgPc, hot wall technique has been used to grow thin layers of AgPc onto the glass substrates kept at different temperatures in a vacuum of 10-5Torr. The films so obtained are annealed and studied for structural, electrical, and optical characterization. The x-ray diffraction and scanning electron microscopy pattern of these films show a crystalline behavior of films. The films deposited at higher substrate temperature suggest the formation of more ordered and crystalline films. An analysis of optical absorption measurements on the films indicates that the interband transition energies lie in the range 4.1-4.13eV.

  3. Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate

    SciTech Connect

    Someya, T.; Ishida, Y.; Yoshida, R.; Iimori, T.; Yukawa, R.; Akikubo, K.; Yamamoto, Sh.; Yamamoto, S.; Kanai, T.; Itatani, J.; Komori, F.; Shin, S.; Matsuda, I.; Fukidome, H.; Funakubo, K.; Suemitsu, M.; Yamamoto, T.

    2014-04-21

    Hot carrier dynamics in the Dirac band of n-type epitaxial graphene on a SiC substrate were traced in real time using femtosecond-time-resolved photoemission spectroscopy. The spectral evolution directly reflects the energetically linear density of states superimposed with a Fermi–Dirac distribution. The relaxation time is governed by the internal energy dissipation of electron–electron scattering, and the observed electronic temperature indicates cascade carrier multiplication.

  4. Wall proximity corrections for hot-wire readings in turbulent flows

    NASA Technical Reports Server (NTRS)

    Hebbar, K. S.

    1980-01-01

    This note describes some details of recent (successful) attempts of wall proximity corrections for hot-wire measurements performed in a three-dimensional incompressible turbulent boundary layer. A simple and quite satisfactory method of estimating wall proximity effects on hot-wire readings is suggested.

  5. Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process

    DOEpatents

    Iwancizko, Eugene; Jones, Kim M.; Crandall, Richard S.; Nelson, Brent P.; Mahan, Archie Harvin

    2001-01-01

    The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.

  6. High Performance Walls in Hot-Dry Climates

    SciTech Connect

    Hoeschele, Marc; Springer, David; Dakin, Bill; German, Alea

    2015-01-01

    High performance walls represent a high priority measure for moving the next generation of new homes to the Zero Net Energy performance level. The primary goal in improving wall thermal performance revolves around increasing the wall framing from 2x4 to 2x6, adding more cavity and exterior rigid insulation, achieving insulation installation criteria meeting ENERGY STAR's thermal bypass checklist, and reducing the amount of wood penetrating the wall cavity.

  7. HOT CELL BUILDING, TRA632. WHILE STEEL BEAMS DEFINE FUTURE WALLS ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    HOT CELL BUILDING, TRA-632. WHILE STEEL BEAMS DEFINE FUTURE WALLS OF THE BUILDING, SHEET STEEL DEFINES THE HOT CELL "BOX" ITSELF. THREE OPERATING WINDOWS ON LEFT; ONE VIEWING WINDOW ON RIGHT. TUBES WILL CONTAIN SERVICE AND CONTROL LEADS. SPACE BETWEEN INNER AND OUTER BOX WALLS WILL BE FILLED WITH SHIELDED WINDOWS AND BARETES CONCRETE. CAMERA FACES SOUTHEAST. INL NEGATIVE NO. 7933. Unknown Photographer, ca. 5/1953 - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

  8. A&M. TAN607. Shield wall sections and details around hot shop ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. TAN-607. Shield wall sections and details around hot shop and special equipment room, showing taper, crane rail elevations, and elevation for biparting door (door no. 301) in wall between hot shop and special equipment room. Ralph M. Parsons 902-3-ANP-607-S 138. Date: December 1952. Approved by INEEL Classification Office for public release. INEEL index code no. 034-0607-62-963-106782 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  9. HOT CELL BUILDING, TRA632, INTERIOR. OPEN CORRIDOR ALONG SOUTH WALL ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    HOT CELL BUILDING, TRA-632, INTERIOR. OPEN CORRIDOR ALONG SOUTH WALL OF BUILDING. CAMERA IS NEAR HOT CELL NO. 1, FACES WEST TOWARDS WALL OF TEST-TRAIN ASSEMBLY (TRA-632A). NOTE MOTORIZED RAIL CRANE ABOVE STAIRWAY. INL NEGATIVE NO. HD46-29-3. Mike Crane, Photographer, 2/2005 - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

  10. Response of hot element wall shear stress gages in laminar oscillating flows

    NASA Technical Reports Server (NTRS)

    Cook, W. J.; Murphy, J. D.; Giddings, T. A.

    1986-01-01

    An experimental investigation of the time-dependent response of hot element wall shear stress gages in unsteady periodic air flows is reported. The study has focused on wall shear stress in laminar oscillating flows produced on a flat plate by a free stream velocity composed of a mean component and a superposed sinusoidal variation. Two types of hot element gages, platinum film and flush wire, were tested for values of reduced frequency ranging from 0.14 to 2.36. Values of the phase angle of the wall shear stress variation relative to the free stream velocity, as indicated by the hot element gages, are compared with numerical prediction. The comparisons show that the gages indicate a wall shear stress variation that lags the true variation, and that the gages will also not indicate the correct wall shear stress variation in periodic turbulent flows.

  11. A Method to Estimate Local Towed Array Angles Using Flush Mounted Hot Film Wall Shear Sensors

    DTIC Science & Technology

    2008-06-05

    during turns. In the invention, a flush mounted hot film sensor and an anemometry system are used to measure the mean and fluctuating turbulent wall...decrease in towing speed necessitated by certain maneuvers can cause the towed array to fall or sink. Suitable flush mounted hot film sensors and anemometry ...the calculated shaped of the deployed towed array 100 and the physical restraints of incorporating the hot -film sensors 108 and associated wiring into

  12. A&M. TAN607. Construction detail showing south shielding wall of hot ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. TAN-607. Construction detail showing south shielding wall of hot shop. Ports have been left for viewing windows. Space on east side of wall will be enclosed to provide operating gallery next to viewing windows and then the cold shop. Date: November 25, 1953. INEEL negative no. 9233 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  13. Response of hot element flush wall gauges in oscillating laminar flow

    NASA Technical Reports Server (NTRS)

    Giddings, T. A.; Cook, W. J.

    1986-01-01

    The time dependent response characteristics of flush-mounted hot element gauges used as instruments to measure wall shear stress in unsteady periodic air flows were investigated. The study was initiated because anomalous results were obtained from the gauges in oscillating turbulent flows for the phase relation of the wall shear stress variation, indicating possible gauge response problems. Flat plate laminar oscillating turbulent flows characterized by a mean free stream velocity with a superposed sinusoidal variation were performed. Laminar rather than turbulent flows were studied, because a numerical solution for the phase angle between the free stream velocity and the wall shear stress variation that is known to be correct can be obtained. The focus is on comparing the phase angle indicated by the hot element gauges with corresponding numerical prediction for the phase angle, since agreement would indicate that the hot element gauges faithfully follow the true wall shear stress variation.

  14. Chiral-Selective Growth of Single-Walled Carbon Nanotubes on Lattice-Mismatched Epitaxial Cobalt Nanoparticles

    PubMed Central

    He, Maoshuai; Jiang, Hua; Liu, Bilu; Fedotov, Pavel V.; Chernov, Alexander I.; Obraztsova, Elena D.; Cavalca, Filippo; Wagner, Jakob B.; Hansen, Thomas W.; Anoshkin, Ilya V.; Obraztsova, Ekaterina A.; Belkin, Alexey V.; Sairanen, Emma; Nasibulin, Albert G.; Lehtonen, Juha; Kauppinen, Esko I.

    2013-01-01

    Controlling chirality in growth of single-walled carbon nanotubes (SWNTs) is important for exploiting their practical applications. For long it has been conceptually conceived that the structural control of SWNTs is potentially achievable by fabricating nanoparticle catalysts with proper structures on crystalline substrates via epitaxial growth techniques. Here, we have accomplished epitaxial formation of monometallic Co nanoparticles with well-defined crystal structure, and its use as a catalyst in the selective growth of SWNTs. Dynamics of Co nanoparticles formation and SWNT growth inside an atomic-resolution environmental transmission electron microscope at a low CO pressure was recorded. We achieved highly preferential growth of semiconducting SWNTs (~90%) with an exceptionally large population of (6, 5) tubes (53%) in an ambient CO atmosphere. Particularly, we also demonstrated high enrichment in (7, 6) and (9, 4) at a low growth temperature. These findings open new perspectives both for structural control of SWNTs and for elucidating the growth mechanisms. PMID:23492872

  15. High Performance Walls in Hot-Dry Climates

    SciTech Connect

    Hoeschele, Marc; Springer, David; Dakin, Bill; German, Alea

    2015-01-01

    High performance walls represent a high priority measure for moving the next generation of new homes to the Zero Net Energy performance level. The primary goal in improving wall thermal performance revolves around increasing the wall framing from 2x4 to 2x6, adding more cavity and exterior rigid insulation, achieving insulation installation criteria meeting ENERGY STAR's thermal bypass checklist. To support this activity, in 2013 the Pacific Gas & Electric Company initiated a project with Davis Energy Group (lead for the Building America team, Alliance for Residential Building Innovation) to solicit builder involvement in California to participate in field demonstrations of high performance wall systems. Builders were given incentives and design support in exchange for providing site access for construction observation, cost information, and builder survey feedback. Information from the project was designed to feed into the 2016 Title 24 process, but also to serve as an initial mechanism to engage builders in more high performance construction strategies. This Building America project utilized information collected in the California project.

  16. 113. ARAI Hot cell (ARA626) Building wall sections and details ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    113. ARA-I Hot cell (ARA-626) Building wall sections and details of radio chemistry lab. Shows high-bay roof over hot cells and isolation rooms below grade storage pit for fuel elements. Norman Engineering Company: 961-area/SF-626-A-4. Date: January 1959. Ineel index code no. 068-0626-00-613-102724. - Idaho National Engineering Laboratory, Army Reactors Experimental Area, Scoville, Butte County, ID

  17. Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Komae, Yasuaki; Yasui, Kanji; Suemitsu, Maki; Endoh, Tetsuo; Ito, Takashi; Nakazawa, Hideki; Narita, Yuzuru; Takata, Masasuke; Akahane, Tadashi

    2009-07-01

    Intermittent gas supplies for hot-mesh chemical vapor deposition (CVD) for the epitaxial growth of gallium nitride (GaN) films were investigated to improve film crystallinity and optical properties. The GaN films were deposited on SiC/Si(111) substrates using an alternating-source gas supply or an intermittent supply of source gases such as ammonia (NH3) and trimethylgallium (TMG) in hot-mesh CVD after deposition of an aluminum nitride (AlN) buffer layer. The AlN layer was deposited using NH3 and trimethylaluminum (TMA) on a SiC layer grown by carbonization of a Si substrate using propane (C3H8). GaN films were grown on the AlN layer by a reaction between NHx radicals generated on a ruthenium (Ru)-coated tungsten (W) mesh and TMG molecules. After testing various gas supply modes, GaN films with good crystallinity and surface morphology were obtained using an intermittent supply of TMG and a continuous supply of NH3 gas. An optimal interval for the TMG gas supply was also obtained for the apparatus employed.

  18. HOT CELL BUILDING, TRA632. ELEVATIONS. PUMICE BLOCK WALLS. BLOWER AND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    HOT CELL BUILDING, TRA-632. ELEVATIONS. PUMICE BLOCK WALLS. BLOWER AND FILTER LOFT PLATFORM AND LADDER ON EAST SIDE. IDAHO OPERATIONS OFFICE MTR-632-IDO-4, 11/1952. INL INDEX NO. 531-0632-00-396-110563, REV. 2. - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

  19. The influence of temperature fluctuations on hot-wire measurements in wall-bounded turbulence

    NASA Astrophysics Data System (ADS)

    Örlü, Ramis; Malizia, Fabio; Cimarelli, Andrea; Schlatter, Philipp; Talamelli, Alessandro

    2014-07-01

    There are no measurement techniques for turbulent flows capable of reaching the versatility of hot-wire probes and their frequency response. Nevertheless, the issue of their spatial resolution is still a matter of debate when it comes to high Reynolds number near-wall turbulence. Another, so far unattended, issue is the effect of temperature fluctuations—as they are, e.g. encountered in non-isothermal flows—on the low and higher-order moments in wall-bounded turbulent flows obtained through hot-wire anemometry. The present investigation is dedicated to document, understand, and ultimately correct these effects. For this purpose, the response of a hot-wire is simulated through the use of velocity and temperature data from a turbulent channel flow generated by means of direct numerical simulations. Results show that ignoring the effect of temperature fluctuations, caused by temperature gradients along the wall-normal direction, introduces—despite a local mean temperature compensation of the velocity reading—significant errors. The results serve as a note of caution for hot-wire measurements in wall-bounded turbulence, and also where temperature gradients are more prevalent, such as heat transfer measurements or high Mach number flows. A simple correction scheme involving only mean temperature quantities (besides the streamwise velocity information) is finally proposed that leads to a substantial bias error reduction.

  20. ARCHITECTURAL WALL SECTIONS OF HOT PILOT PLANT (CPP640). INL DRAWING ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    ARCHITECTURAL WALL SECTIONS OF HOT PILOT PLANT (CPP-640). INL DRAWING NUMBER 200-0640-00-279-111682. ALTERNATE ID NUMBER 8952-CPP-640-A-5. - Idaho National Engineering Laboratory, Idaho Chemical Processing Plant, Fuel Reprocessing Complex, Scoville, Butte County, ID

  1. Hot wire production of single-wall and multi-wall carbon nanotubes

    DOEpatents

    Dillon, Anne C.; Mahan, Archie H.; Alleman, Jeffrey L.

    2010-10-26

    Apparatus (210) for producing a multi-wall carbon nanotube (213) may comprise a process chamber (216), a furnace (217) operatively associated with the process chamber (216), and at least one filament (218) positioned within the process chamber (216). At least one power supply (220) operatively associated with the at least one filament (218) heats the at least one filament (218) to a process temperature. A gaseous carbon precursor material (214) operatively associated with the process chamber (216) provides carbon for forming the multi-wall carbon nanotube (213). A metal catalyst material (224) operatively associated with the process (216) catalyzes the formation of the multi-wall carbon nanotube (213).

  2. Amorphous/epitaxial superlattice for thermoelectric application

    NASA Astrophysics Data System (ADS)

    Ishida, Akihiro; Thao, Hoang Thi Xuan; Shibata, Mamoru; Nakashima, Seisuke; Tatsuoka, Hirokazu; Yamamoto, Hidenari; Kinoshita, Yohei; Ishikiriyama, Mamoru; Nakamura, Yoshiaki

    2016-08-01

    An amorphous/epitaxial superlattice system is proposed for application to thermoelectric devices, and the superlattice based on a PbGeTeS system was prepared by the alternate deposition of PbS and GeTe using a hot wall epitaxy technique. The structure was analyzed by high-resolution transmission electron microscopy (HRTEM) and X-ray analysis, and it was found that the superlattice consists of an epitaxial PbTe-based layer and a GeS-based amorphous layer by the reconstruction of the constituents. A reduction in thermal conductivity due to the amorphous/epitaxial system was confirmed by a 2ω method. Electrical and thermoelectric properties were measured for the samples.

  3. Hot-wall corrosion testing of simulated high level nuclear waste

    SciTech Connect

    Chandler, G.T.; Zapp, P.E.; Mickalonis, J.I.

    1995-01-01

    Three materials of construction for steam tubes used in the evaporation of high level radioactive waste were tested under heat flux conditions, referred to as hot-wall tests. The materials were type 304L stainless steel alloy C276, and alloy G3. Non-radioactive acidic and alkaline salt solutions containing halides and mercury simulated different high level waste solutions stored or processed at the United States Department of Energy`s Savannah River Site. Alloy C276 was also tested for corrosion susceptibility under steady-state conditions. The nickel-based alloys C276 and G3 exhibited excellent corrosion resistance under the conditions studied. Alloy C276 was not susceptible to localized corrosion and had a corrosion rate of 0.01 mpy (0.25 {mu}m/y) when exposed to acidic waste sludge and precipitate slurry at a hot-wall temperature of 150{degrees}C. Type 304L was susceptible to localized corrosion under the same conditions. Alloy G3 had a corrosion rate of 0.1 mpy (2.5 {mu}m/y) when exposed to caustic high level waste evaporator solution at a hot-wall temperature of 220{degrees}C compared to 1.1 mpy (28.0 {mu}/y) for type 304L. Under extreme caustic conditions (45 weight percent sodium hydroxide) G3 had a corrosion rate of 0.1 mpy (2.5 {mu}m/y) at a hot-wall temperature of 180{degrees}C while type 304L had a high corrosion rate of 69.4 mpy (1.8 mm/y).

  4. Hot film wall shear instrumentation for compressible boundary layer transition research

    NASA Technical Reports Server (NTRS)

    Schneider, Steven P.

    1992-01-01

    Experimental and analytical studies of hot film wall shear instrumentation were performed. A new hot film anemometer was developed and tested. The anemometer performance was not quite as good as that of commercial anemometers, but the cost was much less and testing flexibility was improved. The main focus of the project was a parametric study of the effect of sensor size and substrate material on the performance of hot film surface sensors. Both electronic and shock-induced flow experiments were performed to determine the sensitivity and frequency response of the sensors. The results are presented in Michael Moen's M.S. thesis, which is appended. A condensed form of the results was also submitted for publication.

  5. Convective response of a wall-mounted hot-film sensor in a shock tube

    NASA Technical Reports Server (NTRS)

    Roberts, A. Sidney, Jr.; Ortgies, Kelly R.; Gartenberg, Ehud; Carraway, Debra L.

    1991-01-01

    Shock tube experiments were performed in order to determine the response of a single hot-film element of a sensor array to transiently induced flow behind weak normal shock waves. The experiments attempt to isolate the response due only to the change in convective heat transfer at the hot-film surface mounted on the wall of the shock tube. The experiments are described, the results being correlated with transient boundary layer theory and compared with an independent set of experimental results. One of the findings indicates that the change in the air properties (temperature and pressure) precedes the air mass transport, causing an ambiguity in the sensor response to the development of the velocity boundary layer. Also, a transient, local heat transfer coefficient is formulated to be used as a forcing function in an hot-film instrument model and simulation which remains under investigation.

  6. Convective response of a wall-mounted hot-film sensor in a shock tube

    NASA Technical Reports Server (NTRS)

    Roberts, A. S., Jr.; Ortgies, K. R.; Gartenberg, E.; Carraway, D. L.

    1990-01-01

    Shock tube experiments were performed in order to determine the response of a single hot-film element of a sensor array to transiently induced flow behind weak normal shock waves. The experiments attempt to isolate the response due only to the change in convective heat transfer at the hot-film surface mounted on the wall of the shock tube. The experiments are described, the results being correlated with transient boundary layer theory and compared with an independent set of experimental results. One of the findings indicates that the change in the air properties (temperature and pressure) precedes the air mass transport, causing an ambiguity in the sensor response to the development of the velocity boundary layer. Also, a transient, local heat transfer coefficient is formulated to be used as a forcing function in a hot-film instrument model and simulation which remains under investigation.

  7. Chloride-based fast homoepitaxial growth of 4H-SiC films in a vertical hot-wall CVD

    NASA Astrophysics Data System (ADS)

    Guoguo, Yan; Feng, Zhang; Yingxi, Niu; Fei, Yang; Xingfang, Liu; Lei, Wang; Wanshun, Zhao; Guosheng, Sun; Yiping, Zeng

    2016-06-01

    Chloride-based fast homoepitaxial growth of 4H-SiC epilayers was performed on 4° off-axis 4H-SiC substrates in a home-made vertical hot-wall chemical vapor deposition (CVD) system using H2-SiH4-C2H4-HCl. The effect of the SiH4/H2 ratio and reactor pressure on the growth rate of 4H-SiC epilayers has been studied successively. The growth rate increase in proportion to the SiH4/H2 ratio and the influence mechanism of chlorine has been investigated. With the reactor pressure increasing from 40 to 100 Torr, the growth rate increased to 52 μm/hand then decreased to 47 μm/h, which is due to the joint effect of H2 and HCl etching as well as the formation of Si clusters at higher reactor pressure. The surface root mean square (RMS) roughness keeps around 1 nm with the growth rate increasing to 49 μm/h. The scanning electron microscope (SEM), Raman spectroscopy and X-ray diffraction (XRD) demonstrate that 96.7 μm thick 4H-SiC layers of good uniformity in thickness and doping with high crystal quality can be achieved. These results prove that chloride-based fast epitaxy is an advanced growth technique for 4H-SiC homoepitaxy. Project supported by the National High Technology R&D Program of China (No. 2014AA041402), the National Natural Science Foundation of China (Nos. 61474113, 61274007, 61574140), the Beijing Natural Science Foundation of China (Nos. 4132076, 4132074), the Program of State Grid Smart Grid Research Institute (No. SGRI-WD-71-14-004), and the Youth Innovation Promotion Association of CAS.

  8. Confinement of ferroelectric domain-wall motion at artificially formed conducting-nanofilaments in epitaxial BiFeO3 thin films.

    PubMed

    Kim, Woo-Hee; Son, Jong Yeog; Jang, Hyun Myung

    2014-05-14

    We report confinement of ferroelectric domain-wall motion at conducting-nanofilament wall in epitaxial BiFeO3 thin film on Nb-doped SrTiO3 substrate. The BiFeO3 film exhibited well-defined ferroelectric response and unipolar resistive switching behavior. We artificially formed conducting-nanofilaments in the BiFeO3 via conducting atomic force microscope techniques. The conducting-nanofilament wall, which does not possess any ferroelectric polarization, is then able to block domain propagation. Consequently, we demonstrate that the domain-wall motion is effectively confined within the conducting-nanofilament wall during polarization switching. This significant new insight potentially gives an opportunity for the artificial manipulation of nanoscale ferroelectric domain.

  9. Large structural, thin-wall castings made of metals subject to hot tearing, and their fabrication

    NASA Technical Reports Server (NTRS)

    Smashey, Russell W. (Inventor)

    2001-01-01

    An article, such as a gas turbine engine mixer, is made by providing a mold structure defining a thin-walled, hollow article, and a base metal that is subject to hot tear cracking when cast in a generally equiaxed polycrystalline form, such as Rene' 108 and Mar-M247. The article is fabricated by introducing the molten base metal into the mold structure, and directionally solidifying the base metal in the mold structure to form a directionally oriented structure. The directionally oriented structure may be formed of a single grain or oriented multiple grains.

  10. Morphology Control of Hot-Wall MOCVD Selective Area Grown Hexagonal GaN Pyramids

    NASA Astrophysics Data System (ADS)

    Lundskog, Anders; Forsberg, Urban; Holtz, Per Olof; Janzen, Erik

    2012-11-01

    Morphological variations of gallium polar (0001)-oriented hexagonal GaN pyramids grown by hot wall metal organic chemical vapor deposition under various growth conditions are investigated. The stability of the semipolar {1 (1) over bar 02} and nonpolar {1 (1) over bar 00} facets is particularly discussed. The presence of the {1 (1) over bar 02} facets near the apex of the pyramid was found to be controllable by tuning the absolute flow rate of ammonia during the growth Vertical nonpolar {1 (1) over bar 00} facets appeared in gallium rich conditions, which automatically were created when the growth time was prolonged beyond pyramid completion. The result was attributed to a gallium passivation of the {1 (1) over bar 00} surface.

  11. Fibers comprised of epitaxially grown single-wall carbon nanotubes, and a method for added catalyst and continuous growth at the tip

    DOEpatents

    Kittrell, W. Carter; Wang, Yuhuang; Kim, Myung Jong; Hauge, Robert H.; Smalley, Richard E.; Marek leg, Irene Morin

    2010-06-01

    The present invention is directed to fibers of epitaxially grown single-wall carbon nanotubes (SWNTs) and methods of making same. Such methods generally comprise the steps of: (a) providing a spun SWNT fiber; (b) cutting the fiber substantially perpendicular to the fiber axis to yield a cut fiber; (c) etching the cut fiber at its end with a plasma to yield an etched cut fiber; (d) depositing metal catalyst on the etched cut fiber end to form a continuous SWNT fiber precursor; and (e) introducing feedstock gases under SWNT growth conditions to grow the continuous SWNT fiber precursor into a continuous SWNT fiber.

  12. Additive Manufacturing of IN100 Superalloy Through Scanning Laser Epitaxy for Turbine Engine Hot-Section Component Repair: Process Development, Modeling, Microstructural Characterization, and Process Control

    NASA Astrophysics Data System (ADS)

    Acharya, Ranadip; Das, Suman

    2015-09-01

    This article describes additive manufacturing (AM) of IN100, a high gamma-prime nickel-based superalloy, through scanning laser epitaxy (SLE), aimed at the creation of thick deposits onto like-chemistry substrates for enabling repair of turbine engine hot-section components. SLE is a metal powder bed-based laser AM technology developed for nickel-base superalloys with equiaxed, directionally solidified, and single-crystal microstructural morphologies. Here, we combine process modeling, statistical design-of-experiments (DoE), and microstructural characterization to demonstrate fully metallurgically bonded, crack-free and dense deposits exceeding 1000 μm of SLE-processed IN100 powder onto IN100 cast substrates produced in a single pass. A combined thermal-fluid flow-solidification model of the SLE process compliments DoE-based process development. A customized quantitative metallography technique analyzes digital cross-sectional micrographs and extracts various microstructural parameters, enabling process model validation and process parameter optimization. Microindentation measurements show an increase in the hardness by 10 pct in the deposit region compared to the cast substrate due to microstructural refinement. The results illustrate one of the very few successes reported for the crack-free deposition of IN100, a notoriously "non-weldable" hot-section alloy, thus establishing the potential of SLE as an AM method suitable for hot-section component repair and for future new-make components in high gamma-prime containing crack-prone nickel-based superalloys.

  13. Dislocation blocking by AlGaN hot electron injecting layer in the epitaxial growth of GaN terahertz Gunn diode

    NASA Astrophysics Data System (ADS)

    Li, Liang; Yang, Lin'an; Zhang, Jincheng; Hao, Yue

    2013-09-01

    This paper reports an efficient method to improve the crystal quality of GaN Gunn diode with AlGaN hot electron injecting layer (HEI). An evident reduction of screw dislocation and edge dislocation densities is achieved by the strain management and the enhanced lateral growth in high temperature grown AlGaN HEI layer. Compared with the top hot electron injecting layer (THEI) structure, the bottom hot electron injecting layer (BHEI) structure enhances the crystal quality of transit region due to the growth sequence modulation of HEI layer. A high Hall mobility of 2934 cm2/Vs at 77 K, a nearly flat downtrend of Hall mobility at the temperature ranging from 300 to 573 K, a low intensity of ratio of yellow luminescence band to band edge emission, a narrow band edge emission line-width, and a smooth surface morphology are observed for the BHEI structural epitaxy of Gunn diode, which indicates that AlGaN BHEI structure is a promising candidate for fabrication of GaN Gunn diodes in terahertz regime.

  14. Changes in plant cell-wall structure of corn stover due to hot compressed water pretreatment and enhanced enzymatic hydrolysis.

    PubMed

    Zhou, Wei; Yang, Maohua; Wang, Caixia; Liu, Jianfei; Xing, Jianmin

    2014-08-01

    Corn stover is a potential feedstock for biofuel production. This work investigated physical and chemical changes in plant cell-wall structure of corn stover due to hot compressed water (HCW) pretreatment at 170-190 °C in a tube reactor. Chemical composition analysis showed the soluble hemicellulose content increased with pretreatment temperature, whereas the hemicellulose content decreased from 29 to 7 % in pretreated solids. Scanning electron microscopy revealed the parenchyma-type second cell-wall structure of the plant was almost completely removed at 185 °C, and the sclerenchyma-type second cell wall was greatly damaged upon addition of 5 mmol/L ammonium sulfate during HCW pretreatment. These changes favored accessibility for enzymatic action. Enzyme saccharification of solids by optimized pretreatment with HCW at 185 °C resulted in an enzymatic hydrolysis yield of 87 %, an enhancement of 77 % compared to the yield from untreated corn stover.

  15. Effect of the spatial filtering and alignment error of hot-wire probes in a wall-bounded turbulent flow

    NASA Astrophysics Data System (ADS)

    Segalini, A.; Cimarelli, A.; Rüedi, J.-D.; De Angelis, E.; Talamelli, A.

    2011-10-01

    The effort to describe velocity fluctuation distributions in wall-bounded turbulent flows has raised different questions concerning the accuracy of hot-wire measurement techniques close to the wall and more specifically the effect of spatial averaging resulting from the finite size of the wire. Here, an analytical model which describes the effect of the spatial filtering and misalignment of hot-wire probes on the main statistical moments in turbulent wall-bounded flows is presented. The model, which is based on the two-point velocity correlation function, shows that the filtering is directly related to the transverse Taylor micro-scale. By means of turbulent channel flow DNS data, the capacity of the model to accurately describe the probe response is established. At the same time, the filtering effect is appraised for different wire lengths and for a range of misalignment angles which can be expected from good experimental practice. Effects of the second-order terms in the model equations are also taken into account and discussed. In order to use the model in a practical situation, the Taylor micro-scale distribution at least should be provided. A simple scaling law based on classic turbulence theory is therefore introduced and finally employed to estimate the filtering effect for different wire lengths.

  16. The growth of epitaxial single crystal PbS 1-xSe x films by hot wall evaporation

    NASA Astrophysics Data System (ADS)

    Neuelmann, R.; Marino, A.; Reichelt, K.

    1983-12-01

    Heteroepitaxial films of semiconducting PbS 1- xSe x on rock salt and mica substrates have been prepared and studied. The films have good crystalline perfection but have low electron mobilities, probably due to deviations from stoichiometry.

  17. A temperature correlation for the radiation resistance of a thick-walled circular duct exhausting a hot gas

    NASA Technical Reports Server (NTRS)

    Mahan, J. R.; Cline, J. G.; Jones, J. D.

    1984-01-01

    It is often useful to know the radiation impedance of an unflanged but thick-walled circular duct exhausting a hot gas into relatively cold surroundings. The reactive component is shown to be insensitive to temperature, but the resistive component is shown to be temperature dependent. A temperature correlation is developed permitting prediction of the radiation resistance from a knowledge of the temperature difference between the ambient air and the gas flowing from the duct, and a physical basis for this correlation is presented.

  18. Technology Solutions Case Study: High-Performance Walls in Hot-Dry Climates

    SciTech Connect

    2015-04-01

    In this project,the Alliance for Residential Building Innovation (ARBI) team worked with builders in California to implement wall assemblies meeting a U-value lower than 0.050 Btu/h-ft2-°F. ARBI and its project team members helped builders identify preferred wall designs that met the requirements of their architects, structural engineers, and purchasing agents and that were acceptable to their subcontractors. Construction methods were observed and documented and construction costs obtained from builders were used to inform cost estimates for a range of advanced wall system types and insulation types. Wall framing types of 2 × 6 (16- and 24-in. on center [o.c.]) and double stud were modeled in Building Energy Optimization (BEopt™) software with cavity insulation levels ranging from R-19 to R-33 (double stud) and exterior rigid insulation of R-4, R-6, and R-8.

  19. Life prediction of thermally highly loaded components: modelling the damage process of a rocket combustion chamber hot wall

    NASA Astrophysics Data System (ADS)

    Schwarz, W.; Schwub, S.; Quering, K.; Wiedmann, D.; Höppel, H. W.; Göken, M.

    2011-09-01

    During their operational life-time, actively cooled liners of cryogenic combustion chambers are known to exhibit a characteristic so-called doghouse deformation, pursued by formation of axial cracks. The present work aims at developing a model that quantitatively accounts for this failure mechanism. High-temperature material behaviour is characterised in a test programme and it is shown that stress relaxation, strain rate dependence, isotropic and kinematic hardening as well as material ageing have to be taken into account in the model formulation. From fracture surface analyses of a thrust chamber it is concluded that the failure mode of the hot wall ligament at the tip of the doghouse is related to ductile rupture. A material model is proposed that captures all stated effects. Basing on the concept of continuum damage mechanics, the model is further extended to incorporate softening effects due to material degradation. The model is assessed on experimental data and quantitative agreement is established for all tests available. A 3D finite element thermo-mechanical analysis is performed on a representative thrust chamber applying the developed material-damage model. The simulation successfully captures the observed accrued thinning of the hot wall and quantitatively reproduces the doghouse deformation.

  20. Dynamic analysis of moisture transport through walls and associated cooling loads in the hot/humid climate of Florianopolis, Brazil

    SciTech Connect

    Mendes, N.; Winkelmann, F.C.; Lamberts, R.; Philippi, P.C.; Da Cunha Neto, J.A.B.

    1996-04-01

    The authors describe the use of a dynamic model of combined heat and mass transfer to analyze the effects on cooling loads of transient moisture storage and transport through walls with porous building materials, under varying boundary conditions. The materials studied were brick, lime mortar and autoclaved cellular concrete. The physical properties of these materials, such as mass transport coefficients, thermal conductivity and specific heat, were taken to be functions of moisture content. The simulation results were compared to those obtained by pure conduction heat transfer without moisture effects. Also analyzed were the influence on cooling loads of high moisture content due to rain soaking of materials, and the influence of solar radiation on sunny and cloudy days. The weather used was a hot/humid summer period in Florianopolis (South Brazil). It is shown that neglecting moisture migration or assuming that the physical properties of wall materials do not depend on moisture content can result in large errors in sensible and latent heat transfer.

  1. Correcting hot-wire spatial resolution effects in third- and fourth-order velocity moments in wall-bounded turbulence

    NASA Astrophysics Data System (ADS)

    Talamelli, Alessandro; Segalini, Antonio; Örlü, Ramis; Schlatter, Philipp; Alfredsson, P. Henrik

    2013-04-01

    Spatial averaging, resulting from the finite size of a hot-wire probe, significantly affects the accuracy of velocity measurements in turbulent flows close to walls. Here, we extend the theoretical model, introduced in Segalini et al. (Meas Sci Technol 22:104508, 2011) quantifying the effect of a linear spatial filter of hot-wire probes on the mean and the variance of the streamwise velocity in turbulent wall-bounded flows, to describe the effect of the spatial filtering on the third- and fourth-order moments of the same velocity component. The model, based on the three-(four) point velocity-correlation function for the third-(fourth-) order moment, shows that the filtering can be related to a characteristic length scale which is an equivalent of the Taylor transverse microscale for the second-order moment. The capacity of the model to accurately describe the attenuation is validated against direct numerical simulation (DNS) data of a zero pressure-gradient turbulent boundary layer. The DNS data allow the filtering effect to be appraised for different wire lengths and for the different moments. The model shows good accuracy except for the third-order moment in the region where a zero-crossing of the third-order function is observed and where the equations become ill-conditioned. An "a posteriori" correction procedure, based on the developed model, to correct the measured third- and fourth-order velocity moments is also presented. This procedure, based on combining the measured data by two single hot-wire sensors with different wire lengths, is a natural extension of the one introduced by Segalini et al. (Exp Fluids 51:693-700, 2011) to evaluate both the turbulence intensity and the transverse Taylor microscale in turbulent flows. The technique is validated against spatially averaged simulation data showing a good capacity to correct the actual profiles over the entire height of the boundary layer except, as expected, for the third-order moment in the region where

  2. EBSD analysis of tungsten-filament carburization during the hot-wire CVD of multi-walled carbon nanotubes.

    PubMed

    Oliphant, Clive J; Arendse, Christopher J; Camagu, Sigqibo T; Swart, Hendrik

    2014-02-01

    Filament condition during hot-wire chemical vapor deposition conditions of multi-walled carbon nanotubes is a major concern for a stable deposition process. We report on the novel application of electron backscatter diffraction to characterize the carburization of tungsten filaments. During the synthesis, the W-filaments transform to W2C and WC. W-carbide growth followed a parabolic behavior corresponding to the diffusion of C as the rate-determining step. The grain size of W, W2C, and WC increases with longer exposure time and increasing filament temperature. The grain size of the recrystallizing W-core and W2C phase grows from the perimeter inwardly and this phenomenon is enhanced at filament temperatures in excess of 1,400°C. Cracks appear at filament temperatures >1,600°C, accompanied by a reduction in the filament operational lifetime. The increase of the W2C and recrystallized W-core grain size from the perimeter inwardly is ascribed to a thermal gradient within the filament, which in turn influences the hardness measurements and crack formation.

  3. Aerosol mass spectrometer for the in situ analysis of chemical vapor synthesis processes in hot wall reactors

    NASA Astrophysics Data System (ADS)

    Lee, In-Kyum; Winterer, Markus

    2005-09-01

    We present a modified aerosol mass spectrometer (AMS) for the in situ analysis of chemical vapor synthesis processes in hot wall reactors and describe the transfer function of the velocity and kinetic-energy measurement. The AMS is a combination of a quadrupole mass spectrometer (QMS) and a particle mass spectrometer (PMS) and enables the in situ analysis of aerosols with high number concentrations up to 1018m-3. Size distributions of ultrafine particles in the range of 104-107u (amu) can be measured in the PMS. Simultaneously, molecular species up to 300u can be detected in the QMS. In the setup described here a furnace was developed to enable measurement directly at the reactor exit. The formation of silicon carbide (SiC) nanoparticles by thermal decomposition of tetramethylsilane (TMS) was investigated. TMS started to decompose at about 900K and carbosilanes with two [-Si-C-] units were identified as growth species in the synthesis of SiC from TMS. With increasing temperatures particles were formed and grew by coagulation. At higher temperatures sintering of the particles became an important process. Although the particle mass reduced slightly due to a smaller residence time at higher temperatures in the reactor, the particle velocity in the molecular beam of the AMS decreased significantly. A simple model is used to compare the particle velocity in a molecular beam as a function of particle mass. The significant difference in the particle velocity can be explained by a change in the particle shape factor (κp) due to sintering.

  4. Epitaxial growth and photoluminescence of hexagonal CdS 1- xSe x alloy films

    NASA Astrophysics Data System (ADS)

    Grün, M.; Gerlach, H.; Breitkopf, Th.; Hetterich, M.; Reznitsky, A.; Kalt, H.; Klingshirn, C.

    1995-01-01

    CdSSe ternary alloy films were grown on GaAs(111) by hot-wall beam epitaxy. The hexagonal crystal phase is obtained. The composition varies from 0 to 40% selenium. Luminescence spectroscopy at low temperatures shows a dominant effect by alloy disorder. Localization of carriers, for example, is still observed at a pulsed optical excitation density of 6 mJ/cm 2. The overall quality of the CdSSe films is sufficient to use them as buffer layers for the growth of hexagonal superlattices.

  5. Flush mounted hot film anemometer measurement of wall shear stress distal to a tri-leaflet valve for Newtonian and non-Newtonian blood analog fluids.

    PubMed

    Nandy, S; Tarbell, J M

    1987-01-01

    Wall shear stress has been measured by flush-mounted hot film anemometry distal to an Ionescu-Shiley tri-leaflet valve under pulsatile flow conditions. Both Newtonian (aqueous glycerol) and non-Newtonian (aqueous polyacrylamide) blood analog fluids were investigated. Significant differences in the axial distribution of wall shear stress between the two fluids are apparent in flows having nearly identical Reynolds numbers. The Newtonian fluid exhibits a (peak) wall shear rate which is maximized near the valve seat (30 mm) and then decays to a fully developed flow value (by 106 mm). In contrast, the shear rate of the non-Newtonian fluid at 30 mm is less than half that of the Newtonian fluid and at 106 mm is more than twice that of the Newtonian fluid. It is suggested that non-Newtonian rheology influences valve flow patterns either through alterations in valve opening associated with low shear separation zones behind valve leaflets, or because of variations in the rate of jet spreading. More detailed studies are required to clarify the mechanisms. The Newtonian wall shear stresses for this valve are low. The highest value observed anywhere in the aortic chamber was 2.85 N/m2 at a peak Reynolds number of 3694.

  6. Prototype solar heated hot water systems and double-walled heat exchangers: A collection of quarterly reports

    NASA Technical Reports Server (NTRS)

    1978-01-01

    The plan schedule and status of multiple objectives to be achieved in the development, manufacture, installation, and maintenance of two solar heated hot water prototype systems and two heat exchangers are reported. A computer program developed to resolve problems and evaluate system performance is described.

  7. Thermal performance characterization of residential wall systems using a calibrated hot box with airflow induced by differential pressures

    SciTech Connect

    Jones, D.C.; Ober, D.G.; Goodrow, J.T.

    1995-09-01

    ASTM E 283 ad ASTM E 1424 in conjunction with ASTM C 976 were used to study the effect of airflow on thermal performance of the wall. A typical residential 2 {times} 4 stud wall was constructed and placed on top of a subfloor, making a 2.44 {times} 2.74 m (8 by 9 ft) test specimen. This base wall assembly was then covered with two types of XPS sheathing, various housewraps, a 15{number_sign} felt, and a polyethylene vapor retarder film in 40 different configurations and tested individually per ASTM E 283 and per ASTM C 976. For 24 of the 40 C 976 tests, a differential pressure was induced across the test wall as per and ASTM E 1424. Airflows ranged from undetectable airflow at 0 {center_dot} Pa {Delta}P to 1.63 L/s {center_dot} m{sup 2} for the base wall assembly alone. Difference in airflow resistance performance between the ASTM E 283 and ASTM E 1424 test methods were noted. Thermal testing results incorporating both ASTM C 976 and ASTM E 1424 for tests 1--28 produced apparent thermal conductances (C-values) in the range of 0.40 W/m{sup 2} {center_dot} K for a nondetectable airflow level to 1.81 W/m{sup 2} {center_dot} K for an airflow of 1.53 L/s {center_dot} m{sup 2} for the base wall assembly alone with a 20-Pa {Delta}P. The calculated C-value for this base wall assembly was 0.40 W/m{sup 2} {center_dot} K. Test results reveal that airflow rates as low as 0.2 L/s {center_dot} m{sup 2} could produce a 46% increase in apparent C-value. Similar thermal performance differences were revealed when thicker shiplap XPS sheathing was used. Tests were also conducted using an Air-Tight Drywall configuration showing the effect of wind washing on thermal performance. By sealing the gypsum drywall on the base wall assembly tested, the apparent C-value, when exposed to a 12.5 Pa wind pressure, was found to be equivalent to a base wall assembly configuration which allows 0.15 L/s {center_dot} m{sup 2} airflow to penetrate completely through.

  8. Epitaxial Graphene Quantum Electronics

    DTIC Science & Technology

    2014-05-19

    ferromagnetism with spintronics potential. * We have achieved the highest operational frequency in graphene transistors. Epitaxial graphene; quantum transport...important discovery with implications for spintronics . * We have found that ballistic transport most likely involves non-conventional charge carriers

  9. Origin of the low-energy emission band in epitaxially grown para-sexiphenyl nanocrystallites

    SciTech Connect

    Kadashchuk, A.; Schols, S.; Heremans, P.; Skryshevski, Yu.; Piryatinski, Yu.; Beinik, I.; Teichert, C.; Hernandez-Sosa, G.; Sitter, H.; Andreev, A.; Frank, P.; Winkler, A.

    2009-02-28

    A comparative study of steady-state and time-resolved photoluminescence of para-sexiphenyl (PSP) films grown by organic molecular beam epitaxy (OMBE) and hot wall epitaxy (HWE) under comparable conditions is presented. Using different template substrates [mica(001) and KCl(001) surfaces] as well as different OMBE growth conditions has enabled us to vary greatly the morphology of the PSP crystallites while keeping their chemical structure virtually untouched. We prove that the broad redshifted emission band has a structure-related origin rather than being due to monomolecular oxidative defects. We conclude that the growth conditions and type of template substrate impacts substantially on the film morphology (measured by atomic force microscopy) and emission properties of the PSP films. The relative intensity of the defect emission band observed in the delayed spectra was found to correlate with the structural quality of PSP crystallites. In particular, the defect emission has been found to be drastically suppressed when (i) a KCl template substrate was used instead of mica in HWE-grown films, and (ii) in the OMBE-grown films dominated by growth mounds composed of upright standing molecules as opposed to the films consisting of crystallites formed by molecules lying parallel to the substrate.

  10. Origin of the low-energy emission band in epitaxially grown para-sexiphenyl nanocrystallites

    NASA Astrophysics Data System (ADS)

    Kadashchuk, A.; Schols, S.; Heremans, P.; Skryshevski, Yu.; Piryatinski, Yu.; Beinik, I.; Teichert, C.; Hernandez-Sosa, G.; Sitter, H.; Andreev, A.; Frank, P.; Winkler, A.

    2009-02-01

    A comparative study of steady-state and time-resolved photoluminescence of para-sexiphenyl (PSP) films grown by organic molecular beam epitaxy (OMBE) and hot wall epitaxy (HWE) under comparable conditions is presented. Using different template substrates [mica(001) and KCl(001) surfaces] as well as different OMBE growth conditions has enabled us to vary greatly the morphology of the PSP crystallites while keeping their chemical structure virtually untouched. We prove that the broad redshifted emission band has a structure-related origin rather than being due to monomolecular oxidative defects. We conclude that the growth conditions and type of template substrate impacts substantially on the film morphology (measured by atomic force microscopy) and emission properties of the PSP films. The relative intensity of the defect emission band observed in the delayed spectra was found to correlate with the structural quality of PSP crystallites. In particular, the defect emission has been found to be drastically suppressed when (i) a KCl template substrate was used instead of mica in HWE-grown films, and (ii) in the OMBE-grown films dominated by growth mounds composed of upright standing molecules as opposed to the films consisting of crystallites formed by molecules lying parallel to the substrate.

  11. Epitaxial Garnets and Hexagonal Ferrites.

    DTIC Science & Technology

    1983-12-01

    Ferrites Lithium Ferrite Magnetostatic Wave Garnets Epitaxy Yttrium Iron Garnet Liquid Phase Epitaxy Hexagonal Ferrite Microwave Signal Processing...epitaxial ferrit ( materials for use in microwave and millirreter-wave signal processing devices. The major emphasis has been on multiple layer...overall objective of this research is to develop epitaxial single crystal ferrite films suitable for microwave and millimeter-wave signal processing at

  12. Epitaxial thin films

    DOEpatents

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  13. Changes in hot spring temperature and hydrogeology of the Alpine Fault hanging wall, New Zealand, induced by distal South Island earthquakes

    NASA Astrophysics Data System (ADS)

    Cox, S.; Menzies, C. D.; Sutherland, R.; Denys, P. H.; Chamberlain, C. J.; Teagle, D. A. H.

    2014-12-01

    In response to large distant earthquakes Copland hot spring cooled c.1 °C and changed fluid chemistry. Thermal springs in the Southern Alps, New Zealand, originate through penetration of fluids into a thermal anomaly generated by rapid uplift and exhumation on the Alpine Fault. Copland hot spring (43.629S, 169.946E) is one of the most vigorously flowing, hottest of the springs, discharging strongly effervescent CO2-rich 56-58 °C water at 6 ± 1 Ls-1. Shaking from the Mw7.8 Dusky Sound (Fiordland) 2009 and Mw7.1 Darfield (Canterbury) 2010 earthquakes, 350 and 180 km from the spring respectively, resulted in a characteristic c. 1 °C delayed-cooling over five days. The cooling responses occurred at low shaking intensities (MM III-IV) and seismic energy densities (~10-1 Jm-3) from intermediate-field distances, independent of variations in spectral frequency, without the need for post-seismic recovery before the next cooling occurred. Such shaking can be expected approximately every 1-10 years in central Southern Alps. Observed temperature and fluid chemistry responses are inferred to reflect subtle changes in the fracture permeability of schist mountains adjacent to the spring. Relatively low intensity shaking induced small permanent 10-7-10-6 strains across the Southern Alps - opening fractures which enhance mixing of relatively cool near-surface groundwater with upwelling hot water. Hydrothermal systems situated in places of active deformation, tectonic and topographic stress may be particularly susceptible to earthquake-induced transience, that if monitored may provide important information on difficult to measure hydrogeological properties within active orogens.

  14. A Coupled Thermal, Fluid Flow, and Solidification Model for the Processing of Single-Crystal Alloy CMSX-4 Through Scanning Laser Epitaxy for Turbine Engine Hot-Section Component Repair (Part I)

    NASA Astrophysics Data System (ADS)

    Acharya, Ranadip; Bansal, Rohan; Gambone, Justin J.; Das, Suman

    2014-12-01

    Scanning laser epitaxy (SLE) is a new laser-based additive manufacturing technology under development at the Georgia Institute of Technology. SLE is aimed at the creation of equiaxed, directionally solidified, and single-crystal deposits of nickel-based superalloys through the melting of alloy powders onto superalloy substrates using a fast scanning Nd:YAG laser beam. The fast galvanometer control movement of the laser (0.2 to 2 m/s) and high-resolution raster scanning (20 to 200 µm line spacing) enables superior thermal control over the solidification process and allows the production of porosity-free, crack-free deposits of more than 1000 µm thickness. Here, we present a combined thermal and fluid flow model of the SLE process applied to alloy CMSX-4 with temperature-dependent thermo-physical properties. With the scanning beam described as a moving line source, the instantaneous melt pool assumes a convex hull shape with distinct leading edge and trailing edge characteristics. Temperature gradients at the leading and trailing edges are of order 2 × 105 and 104 K/m, respectively. Detailed flow analysis provides insights on the flow characteristics of the powder incorporating into the melt pool, showing velocities of order 1 × 10-4 m/s. The Marangoni effect drives this velocity from 10 to 15 times higher depending on the operating parameters. Prediction of the solidification microstructure is based on conditions at the trailing edge of the melt pool. Time tracking of solidification history is incorporated into the model to couple the microstructure prediction model to the thermal-fluid flow model, and to predict the probability of the columnar-to-equiaxed transition. Qualitative agreement is obtained between simulation and experimental result.

  15. Germanium epitaxy on silicon

    PubMed Central

    Ye, Hui; Yu, Jinzhong

    2014-01-01

    With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In this paper, we describe recent research progress on heteroepitaxy of Ge flat films and self-assembled Ge quantum dots on Si. For film growth, methods of strain modification and lattice mismatch relief are summarized, while for dot growth, key process parameters and their effects on the dot density, dot morphology and dot position are reviewed. The results indicate that epitaxial Ge-on-Si materials will play a bigger role in silicon photonics. PMID:27877657

  16. Germanium epitaxy on silicon.

    PubMed

    Ye, Hui; Yu, Jinzhong

    2014-04-01

    With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In this paper, we describe recent research progress on heteroepitaxy of Ge flat films and self-assembled Ge quantum dots on Si. For film growth, methods of strain modification and lattice mismatch relief are summarized, while for dot growth, key process parameters and their effects on the dot density, dot morphology and dot position are reviewed. The results indicate that epitaxial Ge-on-Si materials will play a bigger role in silicon photonics.

  17. Germanium epitaxy on silicon

    NASA Astrophysics Data System (ADS)

    Ye, Hui; Yu, Jinzhong

    2014-04-01

    With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In this paper, we describe recent research progress on heteroepitaxy of Ge flat films and self-assembled Ge quantum dots on Si. For film growth, methods of strain modification and lattice mismatch relief are summarized, while for dot growth, key process parameters and their effects on the dot density, dot morphology and dot position are reviewed. The results indicate that epitaxial Ge-on-Si materials will play a bigger role in silicon photonics.

  18. Vacancies in epitaxial graphene

    SciTech Connect

    Davydov, S. Yu.

    2015-08-15

    The coherent-potential method is used to consider the problem of the influence of a finite concentration of randomly arranged vacancies on the density of states of epitaxial graphene. To describe the density of states of the substrate, simple models (the Anderson model, Haldane-Anderson model, and parabolic model) are used. The electronic spectrum of free single-sheet graphene is considered in the low-energy approximation. Charge transfer in the graphene-substrate system is discussed. It is shown that, in all cases, the density of states of epitaxial graphene decreases proportionally to the vacancy concentration. At the same time, the average charge transferred from graphene to the substrate increases.

  19. Epitaxial thinning process

    NASA Technical Reports Server (NTRS)

    Siegel, C. M. (Inventor)

    1984-01-01

    A method is described for thinning an epitaxial layer of a wafer that is to be used in producing diodes having a specified breakdown voltage and which also facilitates the thinning process. Current is passed through the epitaxial layer, by connecting a current source between the substrate of the wafer and an electrolyte in which the wafer is immersed. When the wafer is initially immersed, the voltage across the wafer initially drops and then rises at a steep rate. When light is applied to the wafer the voltage drops, and when the light is interrupted the voltage rises again. These changes in voltage, each indicate the breakdown voltage of a Schottky diode that could be prepared from the wafer at that time. The epitaxial layer is thinned by continuing to apply current through the wafer while it is immersed and light is applied, to form an oxide film and when the oxide film is thick the wafer can then be cleaned of oxide and the testing and thinning continued. Uninterrupted thinning can be achieved by first forming an oxide film, and then using an electrolyte that dissolves the oxide about as fast as it is being formed, to limit the thickness of the oxide layer.

  20. Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor

    SciTech Connect

    Yang, Mengdi Aarnink, Antonius A. I.; Kovalgin, Alexey Y.; Gravesteijn, Dirk J.; Wolters, Rob A. M.; Schmitz, Jurriaan

    2016-01-15

    In this work, the authors developed hot-wire assisted atomic layer deposition (HWALD) to deposit tungsten (W) with a tungsten filament heated up to 1700–2000 °C. Atomic hydrogen (at-H) was generated by dissociation of molecular hydrogen (H{sub 2}), which reacted with WF{sub 6} at the substrate to deposit W. The growth behavior was monitored in real time by an in situ spectroscopic ellipsometer. In this work, the authors compare samples with tungsten grown by either HWALD or chemical vapor deposition (CVD) in terms of growth kinetics and properties. For CVD, the samples were made in a mixture of WF{sub 6} and molecular or atomic hydrogen. Resistivity of the WF{sub 6}-H{sub 2} CVD layers was 20 μΩ·cm, whereas for the WF{sub 6}-at-H-CVD layers, it was 28 μΩ·cm. Interestingly, the resistivity was as high as 100 μΩ·cm for the HWALD films, although the tungsten films were 99% pure according to x-ray photoelectron spectroscopy. X-ray diffraction reveals that the HWALD W was crystallized as β-W, whereas both CVD films were in the α-W phase.

  1. Hot Flashes

    MedlinePlus

    Diseases and Conditions Hot flashes By Mayo Clinic Staff Hot flashes are sudden feelings of warmth, which are usually most intense over the ... skin may redden, as if you're blushing. Hot flashes can also cause profuse sweating and may ...

  2. Hot microswimmers

    NASA Astrophysics Data System (ADS)

    Kroy, Klaus; Chakraborty, Dipanjan; Cichos, Frank

    2016-11-01

    Hot microswimmers are self-propelled Brownian particles that exploit local heating for their directed self-thermophoretic motion. We provide a pedagogical overview of the key physical mechanisms underlying this promising new technology. It covers the hydrodynamics of swimming, thermophoresis and -osmosis, hot Brownian motion, force-free steering, and dedicated experimental and simulation tools to analyze hot Brownian swimmers.

  3. Epitaxial Approaches to Carbon Nanotube Organization

    NASA Astrophysics Data System (ADS)

    Ismach, Ariel

    Carbon nanotubes have unique electronic, mechanical, optical and thermal properties, which make them ideal candidates as building blocks in nano-electronic and electromechanical systems. However, their organization into well-defined geometries and arrays on surfaces remains a critical challenge for their integration into functional nanosystems. In my PhD, we developed a new approach for the organization of carbon nanotubes directed by crystal surfaces. The principle relies on the guided growth of single-wall carbon nanotubes (SWNTs) by atomic features presented on anisotropic substrates. We identified three different modes of surface-directed growth (or 'nanotube epitaxy'), in which the growth of carbon nanotubes is directed by crystal substrates: We first observed the nanotube unidirectional growth along atomic steps ('ledge-directed epitaxy') and nanofacets ('graphoepitaxy') on the surface of miscut C-plane sapphire and quartz. The orientation along crystallographic directions ('lattice-directed epitaxy') was subsequently observed by other groups on different crystals. We have proposed a "wake growth" mechanism for the nanotube alignment along atomic steps and nanofacets. In this mechanism, the catalyst nanoparticle slides along the step or facet, leaving the nanotube behind as a wake. In addition, we showed that the combination of surface-directed growth with external forces, such as electric-field and gas flow, can lead to the simultaneous formation of complex nanotube structures, such as grids and serpentines. The "wake growth" model, which explained the growth of aligned nanotubes, could not explain the formation of nanotube serpentines. For the latter, we proposed a "falling spaghetti" mechanism, in which the nanotube first grows by a free-standing process, aligned in the direction of the gas flow, then followed by absorption on the stepped surface in an oscillatory manner, due to the competition between the drag force caused by the gas flow on the suspended

  4. A&M. Hot cell annex (TAN633) interior under construction. Hot cells ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. Hot cell annex (TAN-633) interior under construction. Hot cells and their doors are along concrete wall. Note side wall of pumice block. Photographer: Jack L. Anderson. Date: October 28, 1957. INEEL negative no. 57-5335 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  5. Misfit dislocations in epitaxy

    NASA Astrophysics Data System (ADS)

    van der Merwe, Jan H.

    2002-08-01

    This article on epitaxy highlights the following: the definition and some historical milestones; the introduction by Frenkel and Kontorowa (FK) of a truncated Fourier series to model the periodic interaction at crystalline interfaces; the invention by Frank and van der Merwe (FvdM)—using the FK model—of (interfacial) misfit dislocations as an important mechanism in accommodating misfit at epilayer-substrate interfaces; the generalization of the FvdM theory to multilayers; the application of the parabolic model by Jesser and van der Merwe to describe, for growing multilayers and superlattices, the impact of Fourier coefficients in the realization of epitaxial orientations and the stability of modes of misfit accommodation; the involvement of intralayer interaction in the latter—all features that impact on the attainment of perfection in crystallinity of thin films, a property that is so vital in the fabrication of useful uniformly thick epilayers (uniformity being another technological requirement), which also depends on misfit accommodation through the interfacial energy that function strongly in the criterion for growth modes, proposed by Bauer; and the ingenious application of the Volterra model by Matthews and others to describe misfit accommodation by dislocations in growing epilayers.

  6. Epitaxial Silicon Doped With Antimony

    NASA Technical Reports Server (NTRS)

    Huffman, James E.; Halleck, Bradley L.

    1996-01-01

    High-purity epitaxial silicon doped with antimony made by chemical vapor deposition, using antimony pentachloride (SbCI5) as source of dopant and SiH4, SiCI2H2, or another conventional source of silicon. High purity achieved in layers of arbitrary thickness. Epitaxial silicon doped with antimony needed to fabricate impurity-band-conduction photodetectors operating at wavelengths from 2.5 to 40 micrometers.

  7. Hot gas filter and system assembly

    DOEpatents

    Lippert, T.E.; Palmer, K.M.; Bruck, G.J.; Alvin, M.A.; Smeltzer, E.E.; Bachovchin, D.M.

    1999-08-31

    A filter element is described for separating fine dirty particles from a hot gas. The filter element comprises a first porous wall and a second porous wall. Each porous wall has an outer surface and an inner surface. The first and second porous walls being coupled together thereby forming a substantially closed figure and open at one end. The open end is formed to be coupled to a hot gas clean up system support structure. The first and second porous walls define a channel beginning at the open end and terminate at the closed end through which a filtered clean gas can flow through and out into the clean gas side of a hot gas clean up system. 8 figs.

  8. Hot gas filter and system assembly

    DOEpatents

    Lippert, Thomas Edwin; Palmer, Kathryn Miles; Bruck, Gerald Joseph; Alvin, Mary Anne; Smeltzer, Eugene E.; Bachovchin, Dennis Michael

    1999-01-01

    A filter element for separating fine dirty particles from a hot gas. The filter element comprises a first porous wall and a second porous wall. Each porous wall has an outer surface and an inner surface. The first and second porous walls being coupled together thereby forming a substantially closed figure and open at one end. The open end is formed to be coupled to a hot gas clean up system support structure. The first and second porous walls define a channel beginning at the open end and terminate at the closed end through which a filtered clean gas can flow through and out into the clean gas side of a hot gas clean up system.

  9. Interfacing epitaxial oxides to gallium nitride

    NASA Astrophysics Data System (ADS)

    Losego, Mark Daniel

    solutions. By controlling the composition of these alloys, the oxide's lattice parameter can be engineered to match GaN and reduce interfacial state density. Compositional control is a universal challenge to oxide MBE, and the MgO-CaO system (MCO) is further complicated by magnesium's high volatility and the lack of a thermodynamically stable phase. Through a detailed investigation of MgO's deposition rate and subsequent impact on MCO composition, the process space for achieving lattice-matched compositions to GaN are fully mapped. Lattice-matched compositions are demonstrated to have the narrowest off-axis rocking curve widths ever reported for an epitaxial oxide deposited directly on GaN (0.7° in φ-circle for 200 reflection). Epitaxial deposition of the ferroelectric (Ba,Sr)TiO3 by hot RF sputtering on GaN surfaces is also demonstrated. Simple MOS capacitors are fabricated from epitaxial rocksalt oxides and (Ba,Sr)TiO3 layers deposited on n-GaN substrates. Current-voltage measurements reveal that BST epilayers have 5 orders of magnitude higher current leakage than rocksalt epilayers. This higher leakage is attributed to the smaller band offset expected at this interface; modeling confirms that electronic transport occurs by Schottky emission. In contrast, current transport across the rocksalt oxide/GaN interface occurs by Frenkel-Poole emission and can be reduced with pre-deposition surface treatments. Finally, through this work, it is realized that the integration of oxides with III-nitrides requires an appreciation of many different fields of research including materials science, surface science, and electrical engineering. By recognizing the importance that each of these fields play in designing oxide/III-nitride interfaces, this thesis has the opportunity to explore other related phenomena including accessing metastable phases through MBE (ytterbium monoxide), spinodal decomposition in metastable alloys (MCO), how polar surfaces grown by MBE compensate their bound

  10. Submonolayer epitaxy with impurities

    NASA Astrophysics Data System (ADS)

    Kotrla, Miroslav; Krug, Joachim; Smilauer, Pavel

    2000-03-01

    The effect of impurities on epitaxial growth in the submonolayer regime is studied using kinetic Monte Carlo simulations of a two-species solid-on-solid growth model. Both species are mobile, and attractive interactions among adatoms and between adatoms and impurities are incorporated. Impurities can be codeposited with the growing material or predeposited prior to growth. The activated exchange of impurities and adatoms is identified as the key kinetic process in the formation a growth morphology in which the impurities decorate the island edges. The dependence of the island density N on flux F and coverage θ is studied in detail. The impurities strongly increase the island density without appreciably changing the exponent \\chi in the power law relation N ~ F^\\chi, apart from a saturation of the flux dependence at large F and small θ. Within the present model, even completely decorated island edges do not provide efficient barriers to the attachment of adatoms, and therefore the mechanism for the increase of \\chi proposed by D. Kandel [Phys. Rev. Lett. 78, 499 (1997)] is not operative. A simple analytic theory taking into account only the dependence of the adatom diffusion constant on impurity coverage is shown to provide semi-quantitative agreement with many features observed in the simulations.

  11. Method of epitaxially depositing cadmium sulfide

    NASA Technical Reports Server (NTRS)

    Hawrylo, Frank Z. (Inventor)

    1980-01-01

    A single crystal layer of either cadmium sulfide or an alloy of cadmium sulfide and indium phosphide is epitaxially deposited on a substrate of cadmium sulfide by liquid phase epitaxy using indium as the solvent.

  12. Epitaxial technology for low cost solar cells

    NASA Technical Reports Server (NTRS)

    Kressel, H.; Raccah, P. M.

    1975-01-01

    Epitaxial solar cell structures on low cost silicon substrates are compared to direct diffusion substrates. Dislocation density in the epitaxial layers is found to be significantly lower than that of the substrate material. The saturation current density of diodes epitaxially formed on the substrate is commonly 2 to 3 orders of magnitude lower than for diodes formed by direct diffusion. Solar cells made epitaxially are substantially better than those made by direct diffusion into similar material.

  13. Layer Resolved Imaging of Magnetic Domain Motion in Epitaxial Heterostructures

    NASA Astrophysics Data System (ADS)

    Zohar, Sioan; Choi, Yongseong; Love, David; Mansell, Rhodri; Barnes, Crispin; Keavney, David; Rosenberg, Richard

    We use X-ray Excited Luminescence Microscopy (XELM) to image the elemental and layer resolved magnetic domain structure of an epitaxial Fe/Cr wedge/Co heterostructure in the presence of large magnetic fields. The observed magnetic domains exhibit several unique behaviors that depend on the Cr thickness (tCr) modulated interlayer exchange coupling (IEC) strength. For Cr thickness tCr??1.5?nm, strongly coupled parallel Co-Fe reversal and weakly coupled layer independent reversal are observed, respectively. The transition between these two reversal mechanisms for 0.34?wall motion and stationary zig zag domain walls. We observe domain walls nucleated at switching field minima are guided by IEC spatial gradients and collapse at switching field maxima.

  14. Electronic cooling via interlayer Coulomb coupling in multilayer epitaxial graphene.

    PubMed

    Mihnev, Momchil T; Tolsma, John R; Divin, Charles J; Sun, Dong; Asgari, Reza; Polini, Marco; Berger, Claire; de Heer, Walt A; MacDonald, Allan H; Norris, Theodore B

    2015-09-24

    In van der Waals bonded or rotationally disordered multilayer stacks of two-dimensional (2D) materials, the electronic states remain tightly confined within individual 2D layers. As a result, electron-phonon interactions occur primarily within layers and interlayer electrical conductivities are low. In addition, strong covalent in-plane intralayer bonding combined with weak van der Waals interlayer bonding results in weak phonon-mediated thermal coupling between the layers. We demonstrate here, however, that Coulomb interactions between electrons in different layers of multilayer epitaxial graphene provide an important mechanism for interlayer thermal transport, even though all electronic states are strongly confined within individual 2D layers. This effect is manifested in the relaxation dynamics of hot carriers in ultrafast time-resolved terahertz spectroscopy. We develop a theory of interlayer Coulomb coupling containing no free parameters that accounts for the experimentally observed trends in hot-carrier dynamics as temperature and the number of layers is varied.

  15. Electronic cooling via interlayer Coulomb coupling in multilayer epitaxial graphene

    PubMed Central

    Mihnev, Momchil T.; Tolsma, John R.; Divin, Charles J.; Sun, Dong; Asgari, Reza; Polini, Marco; Berger, Claire; de Heer, Walt A.; MacDonald, Allan H.; Norris, Theodore B.

    2015-01-01

    In van der Waals bonded or rotationally disordered multilayer stacks of two-dimensional (2D) materials, the electronic states remain tightly confined within individual 2D layers. As a result, electron–phonon interactions occur primarily within layers and interlayer electrical conductivities are low. In addition, strong covalent in-plane intralayer bonding combined with weak van der Waals interlayer bonding results in weak phonon-mediated thermal coupling between the layers. We demonstrate here, however, that Coulomb interactions between electrons in different layers of multilayer epitaxial graphene provide an important mechanism for interlayer thermal transport, even though all electronic states are strongly confined within individual 2D layers. This effect is manifested in the relaxation dynamics of hot carriers in ultrafast time-resolved terahertz spectroscopy. We develop a theory of interlayer Coulomb coupling containing no free parameters that accounts for the experimentally observed trends in hot-carrier dynamics as temperature and the number of layers is varied. PMID:26399955

  16. Hot Tickets

    ERIC Educational Resources Information Center

    Fox, Bette-Lee; Hoffert, Barbara; Kuzyk, Raya; McCormack, Heather; Williams, Wilda

    2008-01-01

    This article describes the highlights of this year's BookExpo America (BEA) held at the Los Angeles Convention Center. The attendees at BEA had not minded that the air was recycled, the lighting was fluorescent, and the food was bad. The first hot book sighting came courtesy of Anne Rice. Michelle Moran, author of newly published novel, "The…

  17. Hot Canyon

    ScienceCinema

    None

    2016-07-12

    This historical film footage, originally produced in the early 1950s as part of a series by WOI-TV, shows atomic research at Ames Laboratory. The work was conducted in a special area of the Laboratory known as the "Hot Canyon."

  18. Hot Canyon

    SciTech Connect

    2012-01-01

    This historical film footage, originally produced in the early 1950s as part of a series by WOI-TV, shows atomic research at Ames Laboratory. The work was conducted in a special area of the Laboratory known as the "Hot Canyon."

  19. Method for rapid, controllable growth and thickness, of epitaxial silicon films

    DOEpatents

    Wang, Qi; Stradins, Paul; Teplin, Charles; Branz, Howard M.

    2009-10-13

    A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

  20. Solar Hot Water Heater

    NASA Technical Reports Server (NTRS)

    1978-01-01

    The solar panels pictured below, mounted on a Moscow, Idaho home, are part of a domestic hot water heating system capable of providing up to 100 percent of home or small business hot water needs. Produced by Lennox Industries Inc., Marshalltown, Iowa, the panels are commercial versions of a collector co-developed by NASA. In an effort to conserve energy, NASA has installed solar collectors at a number of its own facilities and is conducting research to develop the most efficient systems. Lewis Research Center teamed with Honeywell Inc., Minneapolis, Minnesota to develop the flat plate collector shown. Key to the collector's efficiency is black chrome coating on the plate developed for use on spacecraft solar cells, the coating prevents sun heat from "reradiating," or escaping outward. The design proved the most effective heat absorber among 23 different types of collectors evaluated in a Lewis test program. The Lennox solar domestic hot water heating system has three main components: the array of collectors, a "solar module" (blue unit pictured) and a conventional water heater. A fluid-ethylene glycol and water-is circulated through the collectors to absorb solar heat. The fluid is then piped to a double-walled jacket around a water tank within the solar module.

  1. Molecular Beam Epitaxy of

    NASA Astrophysics Data System (ADS)

    Hsieh, Kuan Hsiung

    Ga(,0.48)In(,0.52)As recently emerges as a promising material for high speed applications. It also has a direct bandgap with gap energy suitable for optical applications. It is the purpose of this thesis to grow high quality Ga(,0.47)In(,0.53)As, lattice-matched Al(,0.48)In(,0.52)As and heterojunction structures by molecular beam epitaxy technique for applications in the areas of modulation-doped high mobility devices and internal photoemission Schottky diodes for infrared detection. Single crystal Al metal deposition on GaInAs by MBE is also studied for its electrical properties. Mobility enhancement has been demonstrated in modulation-doped structures at low temperatures. Very high mobilities were obtained: 10,900 cm('2)/Vs at room temperature, 55,500 cm('2)/Vs at 77K and 70,200 cm('2)/Vs at 10K with corresponding two-dimensional electron gas densities greater than 1 x 10('12) l/cm('2). The quality of Ga(,0.47)In(,0.53)As and the parallel conduction in this material are the limiting factors in its mobility. A new ohmic contact phenomenon has been observed in the MBE single crystal Al metal on Ga(,0.47)In(,0.53)AS samples. Its contact resistivity is measured to be as small as 1 x 10('-6) (OMEGA)-cm('2). The Fermi-level pinning near the conduction band edge might be caused by the interface defects. A planar doping technique has been employed to enhance the built-in barrier height to a value of about 0.5 eV in the single crystal Al on n-p('+)-n-Ga(,0.47)In(,0.52)As structures. This novel quasi-Schottky diode also shows a forward ideal factor of 1.03. As for optical detectors, four kinds of diodes were made for internal photoemission studies: Au Schottky on Ga(,0.47)In(,0.53)As in the wavelength range of 1.9 (mu)m to 2.5 (mu)m, Au Schottky on Al(,0.48)In(,0.52)As in 1.1 (mu)m to 2.0 (mu)m range, single crystal Al on (Al(,0.8)Ga(,0.2))(,0.48)In(,0.52)As with improved quantum yields and lastly a Ga(,0.47)In(,0.53)As/Al(,0.48)In(,0.52)As heterojunction with a measured

  2. Layer resolved magnetic domain imaging of epitaxial heterostructures in large applied magnetic fields

    NASA Astrophysics Data System (ADS)

    Zohar, S.; Choi, Y.; Love, D. M.; Mansell, R.; Barnes, C. H. W.; Keavney, D. J.; Rosenberg, R. A.

    2015-02-01

    We use X-ray Excited Luminescence Microscopy to investigate the elemental and layer resolved magnetic reversal in an interlayer exchange coupled (IEC) epitaxial Fe/Cr wedge/Co heterostructure. The transition from strongly coupled parallel Co-Fe reversal for Cr thickness tCr < 0.34 nm to weakly coupled layer independent reversal for tCr > 1.5 nm is punctuated at 0.34 < tCr < 1.5 nm by a combination of IEC guided domain wall motion and stationary zig zag domain walls. Domain walls nucleated at switching field minima are guided by IEC spatial gradients and collapse at switching field maxima.

  3. Epitaxial silicon growth for solar cells

    NASA Technical Reports Server (NTRS)

    Daiello, R. V.; Robinson, P. H.; Richman, D.

    1979-01-01

    The epitaxial procedures, solar cell fabrication, and evaluation techniques are described. The development of baseline epitaxial solar cell structures grown on high quality conventional silicon substrates is discussed. Diagnostic layers and solar cells grown on four potentially low cost silicon substrates are considered. The crystallographic properties of such layers and the performance of epitaxially grown solar cells fabricated on these materials are described. An advanced epitaxial reactor, the rotary disc, is described along with the results of growing solar cell structures of the baseline type on low cost substrates. The add on cost for the epitaxial process is assessed and the economic advantages of the epitaxial process as they relate to silicon substrate selection are examined.

  4. Epitaxial Garnets and Hexagonal Ferrites.

    DTIC Science & Technology

    1982-04-20

    Iron Garnet Liquid Phase Epitaxy Hexagonal Ferrite microwave Signal Processing Millimeter-Wave 20. ABSTRACT (Continue ani revee arde if necoeermy and...le.’uIfy by block rns.) e objective of this research is to develop new and improved epitauial ferrite materials for use in microwave and millimeter... ferrite films suitable for microwave and millimeter-wave signal processing at frequencies above 1 GHz. The specific tasks are: a. Analyze and develop

  5. Recent developments in droplet epitaxy

    SciTech Connect

    Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Abbarchi, Marco; Noda, Takeshi; Sakoda, Kazuaki

    2014-05-15

    The droplet epitaxy allows for self-assembly of lattice-matched GaAs quantum dots (QDs) with high quality and high uniformity. In this article, we show our efforts to realize the GaAs QDs with excellent optical properties. After the optimization of the several growth processes, we achieved current-injection lasing in the GaAs QDs. In addition, formation of further advanced nanostructure is presented.

  6. Are 'hot spots' hot spots?

    NASA Astrophysics Data System (ADS)

    Foulger, Gillian R.

    2012-07-01

    The term 'hot spot' emerged in the 1960s from speculations that Hawaii might have its origins in an unusually hot source region in the mantle. It subsequently became widely used to refer to volcanic regions considered to be anomalous in the then-new plate tectonic paradigm. It carried with it the implication that volcanism (a) is emplaced by a single, spatially restricted, mongenetic melt-delivery system, assumed to be a mantle plume, and (b) that the source is unusually hot. This model has tended to be assumed a priori to be correct. Nevertheless, there are many geological ways of testing it, and a great deal of work has recently been done to do so. Two fundamental problems challenge this work. First is the difficulty of deciding a 'normal' mantle temperature against which to compare estimates. This is usually taken to be the source temperature of mid-ocean ridge basalts (MORBs). However, Earth's surface conduction layer is ˜200 km thick, and such a norm is not appropriate if the lavas under investigation formed deeper than the 40-50 km source depth of MORB. Second, methods for estimating temperature suffer from ambiguity of interpretation with composition and partial melt, controversy regarding how they should be applied, lack of repeatability between studies using the same data, and insufficient precision to detect the 200-300 °C temperature variations postulated. Available methods include multiple seismological and petrological approaches, modelling bathymetry and topography, and measuring heat flow. Investigations have been carried out in many areas postulated to represent either (hot) plume heads or (hotter) tails. These include sections of the mid-ocean spreading ridge postulated to include ridge-centred plumes, the North Atlantic Igneous Province, Iceland, Hawaii, oceanic plateaus, and high-standing continental areas such as the Hoggar swell. Most volcanic regions that may reasonably be considered anomalous in the simple plate-tectonic paradigm have been

  7. Hot Meetings

    NASA Technical Reports Server (NTRS)

    Chiu, Mary

    2002-01-01

    A colleague walked by my office one time as I was conducting a meeting. There were about five or six members of my team present. The colleague, a man who had been with our institution (The Johns Hopkins Applied Physics Lab, a.k.a. APL) for many years, could not help eavesdropping. He said later it sounded like we we re having a raucous argument, and he wondered whether he should stand by the door in case things got out of hand and someone threw a punch. Our Advanced Composition Explorer (ACE) team was a hot group, to invoke the language that is fashionable today, although we never thought of ourselves in those terms. It was just our modus operandi. The tenor of the discussion got loud and volatile at times, but I prefer to think of it as animated, robust, or just plain collaborative. Mary Chiu and her "hot" team from the Johns Hopkins Applied Physics Laboratory built the Advanced Composition Explorer spacecraft for NASA. Instruments on the spacecraft continue to collect data that inform us about what's happening on our most important star, the Sun.

  8. Epitaxial growth of CZT(S,Se) on silicon

    DOEpatents

    Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu

    2016-03-15

    Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

  9. Epitaxial growth of europium monoxide on diamond

    SciTech Connect

    Melville, A.; Heeg, T.; Mairoser, T.; Schmehl, A.; Fischer, M.; Gsell, S.; Schreck, M.; Awschalom, D. D.; Holländer, B.; Schubert, J.; Schlom, D. G.

    2013-11-25

    We report the epitaxial integration of phase-pure EuO on both single-crystal diamond and on epitaxial diamond films grown on silicon utilizing reactive molecular-beam epitaxy. The epitaxial orientation relationship is (001) EuO ‖ (001) diamond and [110] EuO ‖[100] diamond. The EuO layer is nominally unstrained and ferromagnetic with a transition temperature of 68 ± 2 K and a saturation magnetization of 5.5 ± 0.1 Bohr magnetons per europium ion on the single-crystal diamond, and a transition temperature of 67 ± 2 K and a saturation magnetization of 2.1 ± 0.1 Bohr magnetons per europium ion on the epitaxial diamond film.

  10. Effect of substrate temperature on the magnetic properties of epitaxial sputter-grown Co/Pt

    SciTech Connect

    Mihai, A. P.; Whiteside, A. L.; Canwell, E. J.; Marrows, C. H.; Moore, T. A.; Benitez, M. J.; McGrouther, D.; McVitie, S.; McFadzean, S.

    2013-12-23

    Epitaxial Co/Pt films have been deposited by dc-magnetron sputtering onto heated C-plane sapphire substrates. X-ray diffraction, the residual resistivity, and transmission electron microscopy indicate that the Co/Pt films are highly ordered on the atomic scale. The coercive field and the perpendicular magnetic anisotropy increase as the substrate temperature is increased from 100–250 °C during deposition of the Co/Pt. Measurement of the domain wall creep velocity as a function of applied magnetic field yields the domain wall pinning energy, which scales with the coercive field. Evidence for an enhanced creep velocity in highly ordered epitaxial Co/Pt is found.

  11. Molecular-Beam-Epitaxy Program

    NASA Technical Reports Server (NTRS)

    Sparks, Patricia D.

    1988-01-01

    Molecular Beam Epitaxy (MBE) computer program developed to aid in design of single- and double-junction cascade cells made of silicon. Cascade cell has efficiency 1 or 2 percent higher than single cell, with twice the open-circuit voltage. Input parameters include doping density, diffusion lengths, thicknesses of regions, solar spectrum, absorption coefficients of silicon (data included for 101 wavelengths), and surface recombination velocities. Results include maximum power, short-circuit current, and open-circuit voltage. Program written in FORTRAN IV.

  12. Transitional Boundary Layers Under the Influence of High Free Stream Turbulence, Intensive Wall Cooling and High Pressure Gradients in Hot Gas Circulation. Ph.D. Thesis - Technische Hochschule, Karlsruhe, 1985

    NASA Technical Reports Server (NTRS)

    Rued, Klaus

    1987-01-01

    The requirements for fundamental experimental studies of the influence of free stream turbulence, pressure gradients and wall cooling are discussed. Under turbine-like free stream conditions, comprehensive tests of transitional boundary layers with laminar, reversing and turbulent flow increments were performed to decouple the effects of the parameters and to determine the effects during mutual interaction.

  13. Magnetization reversal in epitaxial highly anisotropic CoFe2O4 hetero-structures

    NASA Astrophysics Data System (ADS)

    Lisfi, A.; Pokharel, S.; Morgan, W.; Salamanca-Riba, L.; Wuttig, M.

    2015-05-01

    Magnetization reversal in epitaxial cobalt ferrite films grown on (110) MgO substrate has been investigated through angular studies of hysteresis loop and DCD remanence curve. The angular dependences of the coercivity and the switching field of these films strongly deviate from those typically known for coherent and incoherent rotation modes. However, the best fit for these angular curves suggests that domain wall nucleation is the appropriate mode for the magnetization reversal in these hetero-structures.

  14. Growing Epitaxial Graphene on an Insulator by MBE

    NASA Astrophysics Data System (ADS)

    Mohapatra, Chandra; Eckstein, James

    2009-03-01

    We have used electron beam evaporation of solid carbon (C) to deposit graphene on MgO <111> at 850C. The growth appears epitaxial as observed by in-situ RHEED which also reveals that the hot scattering surface transitions from an insulator to a conductor after deposition of 1 monolayer of C. Growth at higher temperatures gives better crystallinity. We further characterize the film by ex-situ Raman spectroscopy, AFM and transport. Raman reveals all the characteristic G, D and 2D peaks of graphene and the 2D peak can be fit to a single lorentzian typical for graphene. AFM pictures show that the surface consists of flat connected domains, which are uniform across the substrate. Electrical transport shows insulating behavior with resistance (R) varying as 1/T^2. This work was supported by the DOE BES at the F. Seitz Materials Research Laboratory at the University of Illinois, Urbana.

  15. Epitaxial Halide Perovskite Lateral Double Heterostructure.

    PubMed

    Wang, Yiping; Chen, Zhizhong; Deschler, Felix; Sun, Xin; Lu, Toh-Ming; Wertz, Esther A; Hu, Jia-Mian; Shi, Jian

    2017-03-28

    Epitaxial III-V semiconductor heterostructures are key components in modern microelectronics, electro-optics, and optoelectronics. With superior semiconducting properties, halide perovskite materials are rising as promising candidates for coherent heterostructure devices. In this report, spinodal decomposition is proposed and experimentally implemented to produce epitaxial double heterostructures in halide perovskite system. Pristine epitaxial mixed halide perovskites rods and films were synthesized via van der Waals epitaxy by chemical vapor deposition method. At room temperature, photon was applied as a knob to regulate the kinetics of spinodal decomposition and classic coarsening. By this approach, halide perovskite double heterostructures were created carrying epitaxial interfaces and outstanding optical properties. Reduced Fröhlich electron-phonon coupling was discovered in coherent halide double heterostructure, which is hypothetically attributed to the classic phonon confinement effect widely existing in III-V double heterostructures. As a proof-of-concept, our results suggest that halide perovskite-based epitaxial heterostructures may be promising for high-performance and low-cost optoelectronics, electro-optics, and microelectronics. Thus, ultimately, for practical device applications, it may be worthy to pursue these heterostructures via conventional vapor phase epitaxy approaches widely practised in III-V field.

  16. Wall Shear Stress, Wall Pressure and Near Wall Velocity Field Relationships in a Whirling Annular Seal

    NASA Technical Reports Server (NTRS)

    Morrison, Gerald L.; Winslow, Robert B.; Thames, H. Davis, III

    1996-01-01

    The mean and phase averaged pressure and wall shear stress distributions were measured on the stator wall of a 50% eccentric annular seal which was whirling in a circular orbit at the same speed as the shaft rotation. The shear stresses were measured using flush mounted hot-film probes. Four different operating conditions were considered consisting of Reynolds numbers of 12,000 and 24,000 and Taylor numbers of 3,300 and 6,600. At each of the operating conditions the axial distribution (from Z/L = -0.2 to 1.2) of the mean pressure, shear stress magnitude, and shear stress direction on the stator wall were measured. Also measured were the phase averaged pressure and shear stress. These data were combined to calculate the force distributions along the seal length. Integration of the force distributions result in the net forces and moments generated by the pressure and shear stresses. The flow field inside the seal operating at a Reynolds number of 24,000 and a Taylor number of 6,600 has been measured using a 3-D laser Doppler anemometer system. Phase averaged wall pressure and wall shear stress are presented along with phase averaged mean velocity and turbulence kinetic energy distributions located 0.16c from the stator wall where c is the seal clearance. The relationships between the velocity, turbulence, wall pressure and wall shear stress are very complex and do not follow simple bulk flow predictions.

  17. Origin and reduction of impurities at GaAs epitaxial layer-substrate interfaces

    NASA Astrophysics Data System (ADS)

    Kanber, H.; Yang, H. T.; Zielinski, T.; Whelan, J. M.

    1988-09-01

    Surface cleaning techniques used for semi-insulating GaAs substrates prior to epitaxial growth can have an important and sometimes detrimental effect on the quality and characteristics of epitaxial layers that are grown on them. We observe that a HF rinse followed by a 5:1:1 H 2SO 4:H 2O 2:H 2O etch and H 2O rinse drastically reduced the maximum concentrations and total amount of both SIMS detected S and Si for MOCVD grown GaAs undoped epitaxial layers. Subsequent final HCl and H 2O reduced the S interfacial residues to the SIMS detection limit. Total amounts of residual Si are estimated to be equivalent to 10 -2 to 10 -3 monolayers. Residual S is less. Alternately the S residue can be comparable reduced by a HF rinse followed by a NH 4OH:H 2O 2:H 2O etch and H 2O rinse. Hot aqueous HCl removes S but not Si residues. The Si residue is not electrically active and most likely exists as islands of SiO 2. The relative significance of the impurity residues is most pronounced for halide VPE, smaller for MBE and least for MOCVD grown GaAs epitaxial layers.

  18. Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass: Preprint

    SciTech Connect

    Young, D. L.; Grover, S.; Teplin, C.; Stradins, P.; LaSalvia, V.; Chuang, T. K.; Couillard, J. G.; Branz, H. M.

    2012-06-01

    We report characterizations of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (Voc) above 560 mV. The 2-um absorber cells are grown by low-temperature (<750 degrees C) hot-wire CVD (HWCVD) on Corning EAGLE XG display glass coated with a layer-transferred (LT) Si seed. The high Voc is a result of low-defect epitaxial Si (epi-Si) growth and effective hydrogen passivation of defects. The quality of HWCVD epitaxial growth on seeded glass substrates depends on the crystallographic quality of the seed and the morphology of the epitaxial growth surface. Heterojunction devices consist of glass/c-Si LT seed/ epi n+ Si:P/epi n- Si:P/intrinsic a-Si:H/p+ a-Si:H/ITO. Similar devices grown on electronically 'dead' n+ wafers have given Voc {approx}630 mV and {approx}8% efficiency with no light trapping features. Here we study the effects of the seed surface polish on epi-Si quality, how hydrogenation influences the device character, and the dominant junction transport physics.

  19. Epitaxial growth and stress relaxation of vapor-deposited Fe-Pd magnetic shape memory films

    NASA Astrophysics Data System (ADS)

    Kühnemund, L.; Edler, T.; Kock, I.; Seibt, M.; Mayr, S. G.

    2009-11-01

    To achieve maximum performance in microscale magnetic shape memory actuation devices epitaxial films several hundred nanometers thick are needed. Epitaxial films were grown on hot MgO substrates (500 °C and above) by e-beam evaporation. Structural properties and stress relaxation mechanisms were investigated by high-resolution transmission electron microscopy, in situ substrate curvature measurements and classical molecular dynamics (MD) simulations. The high misfit stress incorporated during Vollmer-Weber growth at the beginning was relaxed by partial or perfect dislocations depending on the substrate temperature. This relaxation allowed the avoidance of a stress-induced breakdown of epitaxy and no thickness limit for epitaxy was found. For substrate temperatures of 690 °C or above, the films grew in the fcc austenite phase. Below this temperature, iron precipitates were formed. MD simulations showed how these precipitates influence the movements of partial dislocations, and can thereby explain the higher stress level observed in the experiments in the initial stage of growth for these films.

  20. Thermal breaking systems for metal stud walls -- Can metal stud walls perform as well as wood stud walls

    SciTech Connect

    Kosny, J.; Christian, J.E.; Desjarlais, A.O.

    1997-12-31

    Metal stud wall systems for residential buildings are gaining in popularity. Strong thermal bridges caused by highly conductive metal studs degrade the thermal performance of such walls. Several wall configurations have been developed to improve their thermal performance. The authors tried to evaluate some of these wall systems. The thermal performance of metal stud walls is frequently compared with that of wood stud walls. A reduction of the in-cavity R-value caused by the wood studs is about 10% in wood stud walls. In metal stud walls, thermal bridges generated by the metal components reduce their thermal performance by up to 55%. Today, metal stud walls are believed to be considerably less thermally effective than similar systems made of wood because steel has much higher thermal conductivity than wood. Relatively high R-values may be achieved by installing insulating sheathing, which is now widely recommended as the remedy for weak thermal performance of metal stud walls. A series of promising metal stud wall configurations was analyzed. Some of these walls were designed and tested by the authors, some were tested in other laboratories, and some were developed and forgotten a long time ago. Several types of thermal breaking systems were used in these walls. Two- and three-dimensional finite-difference computer simulations were used to analyze 20 metal stud wall configurations. Also, a series of hot-box tests were conducted on several of these walls. Test results for 22 additional metal stud walls were analyzed. Most of these walls contained conventional metal studs. Commonly used fiberglass and EPS were used as insulation materials. The most promising metal stud wall configurations have reductions in the center-of-cavity R-values of less than 20%.

  1. Wall Turbulence.

    ERIC Educational Resources Information Center

    Hanratty, Thomas J.

    1980-01-01

    This paper gives an account of research on the structure of turbulence close to a solid boundary. Included is a method to study the flow close to the wall of a pipe without interferring with it. (Author/JN)

  2. Ion implanted epitaxially grown ZnSe

    NASA Technical Reports Server (NTRS)

    1974-01-01

    The epitaxial growth of ZnSe on (100) Ge using the close-spaced transport process is described. Substrate temperature of 575 C and source temperatures of 675 C yield 10 micron, single crystal layers in 10 hours. The Ge substrates provides a nonreplenishable chemical transport agent and the epitaxial layer thickness is limited to approximately 10 microns. Grown epitaxial layers show excellent photoluminescence structure at 77 K. Grown layers exhibit high resistivity, and annealing in Zn vapor at 575 C reduces the resistivity to 10-100 ohms-cm. Zinc vapor annealing quenches the visible photoluminescence.

  3. Electroless epitaxial etching for semiconductor applications

    DOEpatents

    McCarthy, Anthony M.

    2002-01-01

    A method for fabricating thin-film single-crystal silicon on insulator substrates using electroless etching for achieving efficient etch stopping on epitaxial silicon substrates. Microelectric circuits and devices are prepared on epitaxial silicon wafers in a standard fabrication facility. The wafers are bonded to a holding substrate. The silicon bulk is removed using electroless etching leaving the circuit contained within the epitaxial layer remaining on the holding substrate. A photolithographic operation is then performed to define streets and wire bond pad areas for electrical access to the circuit.

  4. HOT CELL BUILDING, TRA632, INTERIOR. CONTEXTUAL VIEW OF HOT CELL ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    HOT CELL BUILDING, TRA-632, INTERIOR. CONTEXTUAL VIEW OF HOT CELL NO. 2 FROM STAIRWAY ALONG NORTH WALL. OBSERVATION WINDOW ALONG WEST SIDE BENEATH "CELL 2" SIGN. DOORWAY IN LEFT OF VIEW LEADS TO CELL 1 WORK AREA OR TO EXIT OUTDOORS TO NORTH. RADIATION DETECTION MONITOR TO RIGHT OF DOOR. CAMERA FACING SOUTHWEST. INL NEGATIVE NO. HD46-28-3. Mike Crane, Photographer, 2/2005 - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

  5. Extracting hot carriers from photoexcited semiconductor nanocrystals

    SciTech Connect

    Zhu, Xiaoyang

    2014-12-10

    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  6. Epitaxial growth of silicon for layer transfer

    DOEpatents

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  7. Strong impact of slight trench direction misalignment from [11\\bar{2}0] on deep trench filling epitaxy for SiC super-junction devices

    NASA Astrophysics Data System (ADS)

    Kosugi, Ryoji; Ji, Shiyang; Mochizuki, Kazuhiro; Kouketsu, Hidenori; Kawada, Yasuyuki; Fujisawa, Hiroyuki; Kojima, Kazutoshi; Yonezawa, Yoshiyuki; Okumura, Hajime

    2017-04-01

    A trench filling epitaxial growth technique using hot-wall chemical vapor deposition with HCl gas has been developed for SiC super-junction (SJ) device fabrication. 2–6 kV class SJ devices require p/n column structures with depths of over 10 µm. However, rapid trench closure before the trench backfilling process is complete makes these structures difficult to realize. Stripe trenches that were intentionally inclined within ±2° on a surface plane towards the [11\\bar{2}0] direction were formed on an off-angled wafer, and the effects of trench direction misalignment from the off-direction were investigated. Slight trench direction misalignment was found to affect the tilt angle of the mesa top epi-layer strongly. Tilted growth on the mesa top reduced the filling rate at the trench bottom and caused void formation. When a wafer with high orientation-flat accuracy relative to the [11\\bar{2}0] direction was used, 25-µm-deep trench backfilling was successfully demonstrated.

  8. Silicon Holder For Molecular-Beam Epitaxy

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.

    1993-01-01

    Simple assembly of silicon wafers holds silicon-based charge-coupled device (CCD) during postprocessing in which silicon deposited by molecular-beam epitaxy. Attains temperatures similar to CCD, so hotspots suppressed. Coefficients of thermal expansion of holder and CCD equal, so thermal stresses caused by differential thermal expansion and contraction do not develop. Holder readily fabricated, by standard silicon processing techniques, to accommodate various CCD geometries. Silicon does not contaminate CCD or molecular-beam-epitaxy vacuum chamber.

  9. Epitaxial Deposition Of Germanium Doped With Gallium

    NASA Technical Reports Server (NTRS)

    Huffman, James E.

    1994-01-01

    Epitaxial layers of germanium doped with gallium made by chemical vapor deposition. Method involves combination of techniques and materials used in chemical vapor deposition with GeH4 or GeCl4 as source of germanium and GaCl3 as source of gallium. Resulting epitaxial layers of germanium doped with gallium expected to be highly pure, with high crystalline quality. High-quality material useful in infrared sensors.

  10. Solar 'hot spots' are still hot

    NASA Technical Reports Server (NTRS)

    Bai, Taeil

    1990-01-01

    Longitude distributions of solar flares are not random but show evidence for active zones (or hot spots) where flares are concentrated. According to a previous study, two hot spots in the northern hemisphere, which rotate with a synodic period of about 26.72 days, produced the majority of major flares, during solar cycles 20 and 21. The more prominent of these two hot spots is found to be still active during the rising part of cycle 22, producing the majority of northern hemisphere major flares. The synodic rotation period of this hot spot is 26.727 + or - 0.007 days. There is also evidence for hot spots in the southern hemisphere. Two hot spots separated by 180 deg are found to rotate with a period of 29.407 days, with one of them having persisted in the same locations during cycles 19-22 and the other, during cycles 20-22.

  11. 'Stucco' Walls

    NASA Technical Reports Server (NTRS)

    2004-01-01

    This projected mosaic image, taken by the microscopic imager, an instrument located on the Mars Exploration Rover Opportunity 's instrument deployment device, or 'arm,' shows the partial clotting or cement-like properties of the sand-sized grains within the trench wall. The area in this image measures approximately 3 centimeters (1.2 inches) wide and 5 centimeters (2 inches) tall.(This image also appears as an inset on a separate image from the rover's navigation camera, showing the location of this particular spot within the trench wall.)

  12. Epitaxial graphene quantum dots for high-performance terahertz bolometers

    NASA Astrophysics Data System (ADS)

    El Fatimy, Abdel; Myers-Ward, Rachael L.; Boyd, Anthony K.; Daniels, Kevin M.; Gaskill, D. Kurt; Barbara, Paola

    2016-04-01

    Light absorption in graphene causes a large change in electron temperature due to the low electronic heat capacity and weak electron-phonon coupling. This property makes graphene a very attractive material for hot-electron bolometers in the terahertz frequency range. Unfortunately, the weak variation of electrical resistance with temperature results in limited responsivity for absorbed power. Here, we show that, due to quantum confinement, quantum dots of epitaxial graphene on SiC exhibit an extraordinarily high variation of resistance with temperature (higher than 430 MΩ K-1 below 6 K), leading to responsivities of 1 × 1010 V W-1, a figure that is five orders of magnitude higher than other types of graphene hot-electron bolometer. The high responsivity, combined with an extremely low electrical noise-equivalent power (˜2 × 10-16 W Hz-1/2 at 2.5 K), already places our bolometers well above commercial cooled bolometers. Additionally, we show that these quantum dot bolometers demonstrate good performance at temperature as high as 77 K.

  13. Enhanced cold wall CVD reactor growth of horizontally aligned single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Mu, Wei; Kwak, Eun-Hye; Chen, Bingan; Huang, Shirong; Edwards, Michael; Fu, Yifeng; Jeppson, Kjell; Teo, Kenneth; Jeong, Goo-Hwan; Liu, Johan

    2016-05-01

    HASynthesis of horizontally-aligned single-walled carbon nanotubes (HA-SWCNTs) by chemical vapor deposition (CVD) directly on quartz seems very promising for the fabrication of future nanoelectronic devices. In comparison to hot-wall CVD, synthesis of HA-SWCNTs in a cold-wall CVD chamber not only means shorter heating, cooling and growth periods, but also prevents contamination of the chamber. However, since most synthesis of HA-SWCNTs is performed in hot-wall reactors, adapting this well-established process to a cold-wall chamber becomes extremely crucial. Here, in order to transfer the CVD growth technology from a hot-wall to a cold-wall chamber, a systematic investigation has been conducted to determine the influence of process parameters on the HA-SWCNT's growth. For two reasons, the cold-wall CVD chamber was upgraded with a top heater to complement the bottom substrate heater; the first reason to maintain a more uniform temperature profile during HA-SWCNTs growth, and the second reason to preheat the precursor gas flow before projecting it onto the catalyst. Our results show that the addition of a top heater had a significant effect on the synthesis. Characterization of the CNTs shows that the average density of HA-SWCNTs is around 1 - 2 tubes/ μm with high growth quality as shown by Raman analysis. [Figure not available: see fulltext.

  14. Wall Art

    ERIC Educational Resources Information Center

    McGinley, Connie Q.

    2004-01-01

    The author of this article, an art teacher at Monarch High School in Louisville, Colorado, describes how her experience teaching in a new school presented an exciting visual challenge for an art teacher--monotonous brick walls just waiting for decoration. This school experienced only minimal instances of graffiti, but as an art teacher, she did…

  15. Effects of contamination on selective epitaxial growth

    NASA Astrophysics Data System (ADS)

    MacDonald, Brian J.; Paton, Eric; Adem, Ercan; En, Bill

    2004-06-01

    As MOSFET dimensions scale down in size, it has become increasingly difficult to maintain high drive current while suppressing the off-state leakage current. One method of avoiding short-channel effects is to scale the source/drain (S/D) junction depths proportionally with the gate length. Unfortunately, this increases the S/D resistance, which slows the circuit. To keep the S/D junction shallow without affecting the S/D resistance, a raised S/D (RSD) structure is required. Integrating RSD can be difficult. Selective epitaxial growth (SEG) is the process used to incorporate RSD. This process requires a relatively clean surface to initiate the growth. Insertion of SEG earlier in the process flow facilitates selective epitaxial growth. Insertion of SEG later in the process flow results in higher levels of contamination at the interface of the Si substrate and the RSD structure. In this paper, we identify some mechanisms that determine the quality of the selective epitaxial film. Results indicate that Si defects are not a dominant mechanism in SEG film quality. Instead, results suggest that higher levels of contamination increased the surface roughness of the epitaxial film. PMOS regions were found to have higher levels of contamination and rougher epitaxial films than NMOS regions. Hydrogen bake as high as 900 °C was required to lower the surface contamination and provide excellent epitaxial morphology. Unfortunately, this high temperature causes enhanced dopant diffusion and deactivation of the device. Previous work [H. van Meer, K. De Meyer, Symposium on VLSI Technology Digest of Technical Papers, 2002, p. 170.] identified an alternative integration that provides excellent quality selective epitaxy, without dopant diffusion and deactivation.

  16. Flow Characteristics of Plane Wall Jet with Side Walls on Both Sides

    NASA Astrophysics Data System (ADS)

    Imao, Shigeki; Kikuchi, Satoshi; Kozato, Yasuaki; Hayashi, Takayasu

    Flow characteristics of a two-dimensional jet with side walls have been studied experimentally. Three kinds of cylindrical walls and a flat wall were provided as the side walls, and they were combined and attached to a nozzle. Nine types of side wall conditions were investigated. Velocity was measured by a hot-wire probe and the separation point was measured by a Pitot tube. Mean velocity profiles, the growth of the jet half-width, the decay of jet maximum velocity, and the attachment distance were clarified. When cylindrical walls with different radii are installed, the flow pattern changes markedly depending on the velocity of the jet. A striking increase in the jet half-width is related to the separation of flow from the smaller cylindrical wall just behind the nozzle.

  17. Engineering epitaxial graphene with oxygen

    NASA Astrophysics Data System (ADS)

    Kimouche, Amina; Martin, Sylvain; Winkelmann, Clemens; Fruchart, Olivier; Courtois, Hervé; Coraux, Johann; Hybrid system at low dimension Team

    2013-03-01

    Almost free-standing graphene can be obtained on metals by decoupling graphene from its substrate, for instance by intercalation of atoms beneath graphene, as it was shown with oxygen atoms. We show that the interaction of oxygen with epitaxial graphene on iridium leads to the formation of an ultrathin crystalline oxide extending between graphene and the metallic substrate via the graphene wrinkles. Graphene studied in this work was prepared under ultra-high vacuum by CVD. The samples were studied by combining scanning probe microscopy (STM, AFM) and spatially resolved spectroscopy (Raman, STS). The ultrathin oxide forms a decoupling barrier layer between graphene and Ir, yielding truly free-standing graphene whose hybridization and charge transfers with the substrate have been quenched. Our work presents novel types of graphene-based nanostructures, and opens the route to the transfer-free preparation of graphene directly onto an insulating support contacted to the metallic substrate which could serve as a gate electrode. Work supported by the EU-NMP GRENADA project

  18. Island morphologies in epitaxial growth.

    NASA Astrophysics Data System (ADS)

    Hessinger, Uwe; Leskovar, M.; Rumaner, Lee; Ohuchi, Fumio; Olmstead, Marjorie A.; Ueno, Keiji; Koma, Atsushi

    1996-03-01

    Growth of epitaxial films commonly occurs through the coalescence of individual islands. The morphology of islands has therefore a key importance for the film qualities desired. A uniform layer-by-layer growth of the film is achieved when islands in the first layer coalesce to form a uniform layer before a second layer nucleates; a non-uniform multi-layer growth results from multiple layers successively nucleating on top of each other before the first layer coalesces. We developed a kinetic model based on an analytic solution of the diffusion equation between nucleation events to calculate the evolving island morphology during growth. The morphologies depend on deposition rate, substrate temperature, and activation energies for surface diffusion on the substrate and deposited material. By applying this theory to atomic force microscopy data of GaSe multi-layer islands, we extract a value for the activation energy for Ga diffusion across steps of GaSe. Supported by NSF Grant No. ECS-9209652, DOE Grant No. DE-FG06-94ER45516, and the Japanese New Energy Development Organization.

  19. Modelling Hot Air Balloons.

    ERIC Educational Resources Information Center

    Brimicombe, M. W.

    1991-01-01

    A macroscopic way of modeling hot air balloons using a Newtonian approach is presented. Misleading examples using a car tire and the concept of hot air rising are discussed. Pressure gradient changes in the atmosphere are used to explain how hot air balloons work. (KR)

  20. Hot Weather Tips

    MedlinePlus

    ... FCA - A A + A You are here Home HOT Weather Tips Printer-friendly version We all suffer in hot weather. However, for elderly and disabled people and ... stress and following these tips for dealing with hot weather. Wear cool clothing: See that the person ...

  1. Stereo-epitaxial growth of single-crystal Ni nanowires and nanoplates from aligned seed crystals

    NASA Astrophysics Data System (ADS)

    Lee, Hyoban; Yoo, Youngdong; Kang, Taejoon; Lee, Jiyoung; Kim, Eungwang; Fang, Xiaosheng; Lee, Sungyul; Kim, Bongsoo

    2016-05-01

    Epitaxially grown anisotropic Ni nanostructures are promising building blocks for the development of miniaturized and stereo-integrated data storage kits because they can store multiple magnetic domain walls (DWs). Here, we report stereo-epitaxially grown single-crystalline Ni nanowires (NWs) and nanoplates, and their magnetic properties. Vertical and inclined Ni NWs were grown at the center and edge regions of c-cut sapphire substrates, respectively. Vertical Ni nanoplates were grown on r-cut sapphire substrates. The morphology and growth direction of Ni nanostructures can be steered by seed crystals. Cubic Ni seeds grow into vertical Ni NWs, tetrahedral Ni seeds grow into inclined Ni NWs, and triangular Ni seeds grow into vertical Ni nanoplates. The shapes of the Ni seeds are determined by the interfacial energy between the bottom plane of the seeds and the substrates. The as-synthesized Ni NWs and nanoplates have blocking temperature values greater than 300 K at 500 Oe, verifying that these Ni nanostructures can form large magnetic DWs with high magnetic anisotropy properties. We anticipate that epitaxially grown Ni NWs and nanoplates will be used in various types of 3-dimensional magnetic devices.Epitaxially grown anisotropic Ni nanostructures are promising building blocks for the development of miniaturized and stereo-integrated data storage kits because they can store multiple magnetic domain walls (DWs). Here, we report stereo-epitaxially grown single-crystalline Ni nanowires (NWs) and nanoplates, and their magnetic properties. Vertical and inclined Ni NWs were grown at the center and edge regions of c-cut sapphire substrates, respectively. Vertical Ni nanoplates were grown on r-cut sapphire substrates. The morphology and growth direction of Ni nanostructures can be steered by seed crystals. Cubic Ni seeds grow into vertical Ni NWs, tetrahedral Ni seeds grow into inclined Ni NWs, and triangular Ni seeds grow into vertical Ni nanoplates. The shapes of the Ni

  2. Superconducting cuprate heterostructures for hot electron bolometers

    NASA Astrophysics Data System (ADS)

    Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

    2013-11-01

    Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La2-xSrxCuO4 layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV ˜γI3, with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ /dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area ge -ph≈1 W/K cm2 at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity.

  3. Superconducting cuprate heterostructures for hot electron bolometers

    SciTech Connect

    Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

    2013-11-25

    Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La{sub 2−x}Sr{sub x}CuO{sub 4} layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV∼γI{sup 3}, with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ/dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area g{sub e−ph}≈1 W/K cm{sup 2} at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity.

  4. Tunable bands in biased multilayer epitaxial graphene.

    PubMed

    Williams, Michael D; Samarakoon, Duminda K; Hess, Dennis W; Wang, Xiao-Qian

    2012-04-28

    We have studied the electronic characteristics of multilayer epitaxial graphene under a perpendicularly applied electric bias. Ultraviolet photoemission spectroscopy measurements reveal that there is notable variation of the electronic density-of-states in valence bands near the Fermi level. Evolution of the electronic structure of graphite and rotational-stacked multilayer epitaxial graphene as a function of the applied electric bias is investigated using first-principles density-functional theory including interlayer van der Waals interactions. The experimental and theoretical results demonstrate that the tailoring of electronic band structure correlates with the interlayer coupling tuned by the applied bias. The implications of controllable electronic structure of rotationally fault-stacked epitaxial graphene grown on the C-face of SiC for future device applications are discussed.

  5. Hot cell shield plug extraction apparatus

    DOEpatents

    Knapp, Philip A.; Manhart, Larry K.

    1995-01-01

    An apparatus is provided for moving shielding plugs into and out of holes in concrete shielding walls in hot cells for handling radioactive materials without the use of external moving equipment. The apparatus provides a means whereby a shield plug is extracted from its hole and then swung approximately 90 degrees out of the way so that the hole may be accessed. The apparatus uses hinges to slide the plug in and out and to rotate it out of the way, the hinge apparatus also supporting the weight of the plug in all positions, with the load of the plug being transferred to a vertical wall by means of a bolting arrangement.

  6. Crystal growth of calcium phosphates - epitaxial considerations

    NASA Astrophysics Data System (ADS)

    Koutsoukos, P. G.; Nancollas, G. H.

    1981-05-01

    The growth of one crystalline phase on the surface of another that offers a good crystal lattice match, may be important in environmental, physiological and pathological mineralization processes. The epitaxial relationships and kinetics of growth of hydroxyapatite on crystals of dicalcium phosphate dihydrate, calcium fluoride and calcite have been studied at sustained low supersaturation with respect to hydroxyapatite. At the very low supersaturations, the crystallization of hydroxyapatite takes place without the formation of precursor phases. The experimental results are in agreement with theoretical predictions for epitaxial growth, while the kinetics of hydroxyapatite crystallization on the foreign substrates is the same as that for the growth of hydroxyapatite on synthetic hydroxyapatite crystals.

  7. Chemical vapor deposition of epitaxial silicon

    DOEpatents

    Berkman, Samuel

    1984-01-01

    A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

  8. MHD Electrode and wall constructions

    DOEpatents

    Way, Stewart; Lempert, Joseph

    1984-01-01

    Electrode and wall constructions for the walls of a channel transmitting the hot plasma in a magnetohydrodynamic generator. The electrodes and walls are made of a plurality of similar modules which are spaced from one another along the channel. The electrodes can be metallic or ceramic, and each module includes one or more electrodes which are exposed to the plasma and a metallic cooling bar which is spaced from the plasma and which has passages through which a cooling fluid flows to remove heat transmitted from the electrode to the cooling bar. Each electrode module is spaced from and electrically insulated from each adjacent module while interconnected by the cooling fluid which serially flows among selected modules. A wall module includes an electrically insulating ceramic body exposed to the plasma and affixed, preferably by mechanical clips or by brazing, to a metallic cooling bar spaced from the plasma and having cooling fluid passages. Each wall module is, similar to the electrode modules, electrically insulated from the adjacent modules and serially interconnected to other modules by the cooling fluid.

  9. 14. View of interior, north and east walls featuring sink, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    14. View of interior, north and east walls featuring sink, facing east (Note: B/W scale on wall in foreground is in 1/2 ft increments) - Nevada Test Site, Reactor Maintenance & Disassembly Complex, Junior Hot Cell, Jackass Flats, Area 25, South of intersection of Roads F & G, Mercury, Nye County, NV

  10. Morphology and Electrical Characterization of Reduced Epitaxial Graphene Oxide

    NASA Astrophysics Data System (ADS)

    Hu, Yike; Wu, Xiaosong; Sprinkle, Michael; Madiomanana, Nerasoa; Ruan, Ming; Berger, Claire; de Heer, Walter

    2009-03-01

    We present results for on-chip oxidation of epitaxial graphene and sequential reduction of the insulating graphene oxide layers. In our previous work , we have used the Hummer's method to oxidize epitaxial graphene and used electron beam exposure and heat treatment to reduce the epitaxial graphene oxide (EGO) band gap by changing the degree of oxidation. Here we further explore various oxidation and reduction methods on epitaxial graphene. EGO is characterized by atomic force microscopy, low-energy electron diffraction, ellipsometry, and Raman Spectrometry. Mobility measurements of patterned structures are presented where epitaxial graphene layers pads are seamlessly connected to EGO ribbons.

  11. A New Eddy-Based Model for Wall-Bounded Turbulent Flows

    DTIC Science & Technology

    2010-02-11

    results show it to work effectively as a correction scheme for spatial resolution effects in hot - wire anemometry measurements in wall-turbulence. 15...results show it to work effectively as a correction scheme for spatial resolution effects in hot - wire anemometry measurements in wall-turbulence. The...Carry out hot - wire anemometry experiments covering a large Reynolds number range. This involves the use of the High Reynolds Number Boundary Layer

  12. Radioactive hot cell access hole decontamination machine

    DOEpatents

    Simpson, William E.

    1982-01-01

    Radioactive hot cell access hole decontamination machine. A mobile housing has an opening large enough to encircle the access hole and has a shielding door, with a door opening and closing mechanism, for uncovering and covering the opening. The housing contains a shaft which has an apparatus for rotating the shaft and a device for independently translating the shaft from the housing through the opening and access hole into the hot cell chamber. A properly sized cylindrical pig containing wire brushes and cloth or other disks, with an arrangement for releasably attaching it to the end of the shaft, circumferentially cleans the access hole wall of radioactive contamination and thereafter detaches from the shaft to fall into the hot cell chamber.

  13. Cooling wall

    SciTech Connect

    Nosenko, V.I.

    1995-07-01

    Protecting the shells of blast furnaces is being resolved by installing cast iron cooling plates. The cooling plates become non-operational in three to five years. The problem is that defects occur in manufacturing the cooling plates. With increased volume and intensity of work placed on blast furnaces, heat on the cast iron cooling plates reduces their reliability that limits the interim repair period of blast furnaces. Scientists and engineers from the Ukraine studied this problem for several years, developing a new method of cooling the blast furnace shaft called the cooling wall. Traditional cast iron plates were replaced by a screen of steel tubes, with the area between the tubes filled with fireproof concrete. Before placing the newly developed furnace shaft into operation, considerable work was completed such as theoretical calculations, design, research of temperature fields and tension. Continual testing over many years confirms the value of this research in operating blast furnaces. The cooling wall works with water cooling as well as vapor cooling and is operating in 14 blast furnaces in the Ukraine and two in Russia, and has operated for as long as 14 years.

  14. Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy

    SciTech Connect

    Zheng, Qiye; Kim, Honggyu; Zhang, Runyu; Zuo, Jianmin; Braun, Paul V.; Sardela, Mauro; Balaji, Manavaimaran; Lourdudoss, Sebastian; Sun, Yan-Ting

    2015-12-14

    Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured Ga{sub x}In{sub 1−x}P (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.

  15. Epitaxial solar-cell fabrication, phase 2

    NASA Technical Reports Server (NTRS)

    Daiello, R. V.; Robinson, P. H.; Kressel, H.

    1977-01-01

    Dichlorosilane (SiH2Cl2) was used as the silicon source material in all of the epitaxial growths. Both n/p/p(+) and p/n/n(+) structures were studied. Correlations were made between the measured profiles and the solar cell parameters, especially cell open-circuit voltage. It was found that in order to obtain consistently high open-circuit voltage, the epitaxial techniques used to grow the surface layer must be altered to obtain very abrupt doping profiles in the vicinity of the junction. With these techniques, it was possible to grow reproducibly both p/n/n(+) and n/p/p(+) solar cell structures having open-circuit voltages in the 610- to 630-mV range, with fill-factors in excess of 0.80 and AM-1 efficiencies of about 13%. Combinations and comparisons of epitaxial and diffused surface layers were also made. Using such surface layers, we found that the blue response of epitaxial cells could be improved, resulting in AM-1 short-circuit current densities of about 30 mA/cm sq. The best cells fabricated in this manner had AM-1 efficiency of 14.1%.

  16. New Sources for Chemical Beam Epitaxy.

    DTIC Science & Technology

    2007-11-02

    TBP, BPE , TDMAP, and TBBDMAP. This work has resulted in: (1) further development of safe and improved sources specifically for chemical beam epitaxy... BPE , TDMAP, and TBBDMAP was performed. The first reported growth of GaInP without precracking the phosphorous source, TDMAP, and the first reported

  17. Improved Boat For Liquid-Phase Epitaxy

    NASA Technical Reports Server (NTRS)

    Connolly, John C.

    1991-01-01

    Liquid-phase epitaxial (LPE) growth boat redesigned. Still fabricated from ultra-high-purity graphite, but modified to permit easy disassembly and cleaning, along with improved wiping action for more complete removal of melt to reduce carry-over of gallium. Larger substrates and more uniform composition obtained.

  18. Electrostatic transfer of epitaxial graphene to glass.

    SciTech Connect

    Ohta, Taisuke; Pan, Wei; Howell, Stephen Wayne; Biedermann, Laura Butler; Beechem Iii, Thomas Edwin; Ross, Anthony Joseph, III

    2010-12-01

    We report on a scalable electrostatic process to transfer epitaxial graphene to arbitrary glass substrates, including Pyrex and Zerodur. This transfer process could enable wafer-level integration of graphene with structured and electronically-active substrates such as MEMS and CMOS. We will describe the electrostatic transfer method and will compare the properties of the transferred graphene with nominally-equivalent 'as-grown' epitaxial graphene on SiC. The electronic properties of the graphene will be measured using magnetoresistive, four-probe, and graphene field effect transistor geometries [1]. To begin, high-quality epitaxial graphene (mobility 14,000 cm2/Vs and domains >100 {micro}m2) is grown on SiC in an argon-mediated environment [2,3]. The electrostatic transfer then takes place through the application of a large electric field between the donor graphene sample (anode) and the heated acceptor glass substrate (cathode). Using this electrostatic technique, both patterned few-layer graphene from SiC(000-1) and chip-scale monolayer graphene from SiC(0001) are transferred to Pyrex and Zerodur substrates. Subsequent examination of the transferred graphene by Raman spectroscopy confirms that the graphene can be transferred without inducing defects. Furthermore, the strain inherent in epitaxial graphene on SiC(0001) is found to be partially relaxed after the transfer to the glass substrates.

  19. Reversible plasma switching in epitaxial BiFeO{sub 3} thin films

    SciTech Connect

    Kim, Yunseok; Vrejoiu, Ionela; Hesse, Dietrich; Alexe, Marin

    2010-05-17

    Reversible plasma switching in epitaxial multiferroic BiFeO{sub 3} thin films was directly observed and analyzed using piezoresponse force microscopy. The polarization could be reversibly switched using oxygen plasma and a subsequent thermal annealing treatment in vacuum, respectively. The domain wall velocity during plasma switching, estimated to about 10{sup -8} m/s, is much slower compared to the normal electrical switching, however a large area of square centimeter scale could be stably switched. The results demonstrate that reversible plasma switching can be achieved by oxygen plasma treatment and it can be a useful tool for an electrode-less control of ferroelectric switching on large area.

  20. Wall to Wall Optimal Transport

    NASA Astrophysics Data System (ADS)

    Chini, Gregory P.; Hassanzadeh, Pedram; Doering, Charles R.

    2013-11-01

    How much heat can be transported between impermeable fixed-temperature walls by incompressible flows with a given amount of kinetic energy or enstrophy? What do the optimal velocity fields look like? We employ variational calculus to address these questions in the context of steady 2D flows. The resulting nonlinear Euler-Lagrange equations are solved numerically, and in some cases analytically, to find the maximum possible Nusselt number Nu as a function of the Péclect number Pe , a measure of the flow's energy or enstrophy. We find that in the fixed-energy problem Nu ~ Pe , while in the fixed-enstrophy problem Nu ~ Pe 10 / 17 . In both cases, the optimal flow consists of an array of convection cells with aspect ratio Γ (Pe) . Interpreting our results in terms of the Rayleigh number Ra for relevant buoyancy-driven problems, we find Nu <= 1 + 0 . 035 Ra and Γ ~ Ra - 1 / 2 for porous medium convection (which occurs with fixed energy), and Nu <= 1 + 0 . 115 Ra 5 / 12 and Γ ~ Ra - 1 / 4 for Rayleigh-Bénard convection (which occurs with fixed enstrophy and for free-slip walls). This work was supported by NSF awards PHY-0855335, DMS-0927587, and PHY-1205219 (CRD) and DMS-0928098 (GPC). Much of this work was completed at the 2012 Geophysical Fluid Dynamics (GFD) Program at Woods Hole Oceanographic Institution.

  1. Hot techniques for tonsillectomy.

    PubMed

    Scott, A

    2006-11-01

    (1) Some patients experience pain and bleeding after a standard or extracapsular tonsillectomy. (2) Evidence suggests that none of the hot tonsillectomy techniques offers concurrent reductions in intra- and post-operative bleeding and pain, compared with traditional cold-steel dissection with packs or ties. (3) Little information is available on the cost effectiveness of the hot techniques. (4) Diathermy is likely to remain the most commonly practised hot tonsillectomy technique.

  2. Fluid epitaxialization effect on velocity dependence of dynamic contact angle in molecular scale.

    PubMed

    Ito, Takahiro; Hirata, Yosuke; Kukita, Yutaka

    2010-02-07

    Molecular dynamics simulations were used to investigate the effect of epitaxial ordering of the fluid molecules on the microscopic dynamic contact angle. The simulations were performed in a Couette-flow-like geometry where two immiscible fluids were confined between two parallel walls moving in opposite directions. The extent of ordering was varied by changing the number density of the wall particles. As the ordering becomes more evident, the change in the dynamic contact angle tends to be more sensitive to the increase in the relative velocity of the contact line to the wall. Stress components around the contact line is evaluated in order to examine the stress balance among the hydrodynamic stresses (viscous stress and pressure), the deviation of Young's stress from the static equilibrium condition, and the fluid-wall shear stress induced by the relative motion between them. It is shown that the magnitude of the shear stress on the fluid-wall surface is the primary contribution to the sensitivity of the dynamic contact angle and that the sensitivity is intensified by the fluid ordering near the wall surface.

  3. Stereo-epitaxial growth of single-crystal Ni nanowires and nanoplates from aligned seed crystals.

    PubMed

    Lee, Hyoban; Yoo, Youngdong; Kang, Taejoon; Lee, Jiyoung; Kim, Eungwang; Fang, Xiaosheng; Lee, Sungyul; Kim, Bongsoo

    2016-05-21

    Epitaxially grown anisotropic Ni nanostructures are promising building blocks for the development of miniaturized and stereo-integrated data storage kits because they can store multiple magnetic domain walls (DWs). Here, we report stereo-epitaxially grown single-crystalline Ni nanowires (NWs) and nanoplates, and their magnetic properties. Vertical and inclined Ni NWs were grown at the center and edge regions of c-cut sapphire substrates, respectively. Vertical Ni nanoplates were grown on r-cut sapphire substrates. The morphology and growth direction of Ni nanostructures can be steered by seed crystals. Cubic Ni seeds grow into vertical Ni NWs, tetrahedral Ni seeds grow into inclined Ni NWs, and triangular Ni seeds grow into vertical Ni nanoplates. The shapes of the Ni seeds are determined by the interfacial energy between the bottom plane of the seeds and the substrates. The as-synthesized Ni NWs and nanoplates have blocking temperature values greater than 300 K at 500 Oe, verifying that these Ni nanostructures can form large magnetic DWs with high magnetic anisotropy properties. We anticipate that epitaxially grown Ni NWs and nanoplates will be used in various types of 3-dimensional magnetic devices.

  4. Epitaxially-Grown GaN Junction Field Effect Transistors

    SciTech Connect

    Baca, A.G.; Chang, P.C.; Denbaars, S.P.; Lester, L.F.; Mishra, U.K.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

    1999-05-19

    Junction field effect transistors (JFET) are fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition (MOCVD). The DC and microwave characteristics of the device are presented. A junction breakdown voltage of 56 V is obtained corresponding to the theoretical limit of the breakdown field in GaN for the doping levels used. A maximum extrinsic transconductance (gm) of 48 mS/mm and a maximum source-drain current of 270 mA/mm are achieved on a 0.8 µ m gate JFET device at VGS= 1 V and VDS=15 V. The intrinsic transconductance, calculated from the measured gm and the source series resistance, is 81 mS/mm. The fT and fmax for these devices are 6 GHz and 12 GHz, respectively. These JFETs exhibit a significant current reduction after a high drain bias is applied, which is attributed to a partially depleted channel caused by trapped hot-electrons in the semi-insulating GaN buffer layer. A theoretical model describing the current collapse is described, and an estimate for the length of the trapped electron region is given.

  5. Hot wire anemometry in compressible turbulent boundary layers

    NASA Astrophysics Data System (ADS)

    1981-11-01

    Hot-wire anemometry in compressible flow was studied. New techniques for the measurement of turbulence in compressible flows with thermal sensors are described. The greatest amount of information about fluctuating flow variables as achieved using the newly developed sensors and techniques in conjunction with the classical hot-wire mode diagram method. It was found that the hot wire has no fundamental handicap for accurate high speed turbulence measurements in non-separated boundary layers outside the immediate wall region. It was also known that extreme overheating of a supported sensors leads to advantages in simplicity and accuracy of measurements of turbulent fluctuations over the full Mach number range.

  6. The Earth's Hot Spots.

    ERIC Educational Resources Information Center

    Vink, Gregory E.; And Others

    1985-01-01

    Hot spots are isolated areas of geologic activity where volcanic eruptions, earthquakes, and upwelling currents occur far from plate boundaries. These mantle plumes are relatively stable and crustal plates drift over them. The nature and location of hot spots (with particular attention to the Hawaiian Islands and Iceland) are discussed. (DH)

  7. Hot Spot at Yellowstone

    ERIC Educational Resources Information Center

    Dress, Abby

    2005-01-01

    Within this huge national park (over two million acres spread across Wyoming, Montana, and Idaho) are steaming geysers, hot springs, bubbling mudpots, and fumaroles, or steam vents. Drives on the main roads of Yellowstone take tourists through the major hot attractions, which also include Norris Geyser Basin, Upper and Lower Geyser Basin, West…

  8. Turbulence measurements in curved wall jets

    NASA Astrophysics Data System (ADS)

    Rodman, L. C.; Wood, N. J.; Roberts, L.

    1987-01-01

    Accurate turbulence measurements taken in wall jet flows are difficult to obtain, due to high intensity turbulence and problems in achieving two-dimensionality. The problem is compounded when streamwise curvature of the flow is introduced, since the jet entrainment and turbulence levels are greatly increased over the equivalent planar values. In this experiment, two-dimensional plane and curved wall jet flows are simulated by having a jet blow axially over a cylinder. In the plane case the cylinder has constant transverse radius, and in the curved cases the cylinder has a varying transverse radius. Although the wall jet in these cases is axisymmetric, adequate 'two-dimensional' flow can be obtained as long as the ratio of the jet width to the cylinder radius is small. The annular wall jet has several advantages over wall jets issuing from finite rectangular slots. Since the slot has no ends, three-dimensional effects caused by the finite length of the slot and side wall interference are eliminated. Also, the transverse curvature of the wall allows close optical access to the surface using a Laser Doppler Velocimetry (LDV) system. Hot wire measurements and some LDV measurements are presented for plane and curved wall jet flows. An integral analysis is used to assess the effects of transverse curvature on the turbulent shear stress. The analysis and the data show that the effects of transverse curvature on both the mean flow and the shear stress are small enough for two-dimensional flow to be approximately satisfactorily.

  9. Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Nakamura, Shuji; Sakai, Shiro; Chang, Shi S.; Ramaswamy, Ramu V.; Kim, Jae-Hoon; Radhakrishnan, Gouri; Liu, John K.; Katz, Joseph

    1989-01-01

    Planar oxide-maskless growth of GaAs was demonstrated by transient-mode liquid phase epitaxy (TMLPE) on GaAs-coated Si substrates that were prepared by migration-enhanced molecular beam epitaxy (MEMBE). In TMLPE, the cool substrate was brought into contact with hot melts for a short time. A GaAs layer as thick as 30 microns was grown in 10 sec. The etch pits observed in TMLPE-grown layers became longer in one direction and decreased in density with increasing the TMLPE epilayer thickness. The density of etch pits in a 20 micron-thick layer was approximately 5 x 10 the 6th/sq cm. Strong bandgap emission elliptically polarized with a major axis perpendicular to the surface was observed at about 910 nm, while deep-level emission from the TMLPE/MEMBE GaAs interface was detected at 980 nm. The photoluminescence intensity divided by the carrier concentration of the TMLPE-grown layer was about 270 times larger than that of the MEMBE-grown layer used as a substrate.

  10. Photoluminescence studies in epitaxial CZTSe thin films

    NASA Astrophysics Data System (ADS)

    Sendler, Jan; Thevenin, Maxime; Werner, Florian; Redinger, Alex; Li, Shuyi; Hägglund, Carl; Platzer-Björkman, Charlotte; Siebentritt, Susanne

    2016-09-01

    Epitaxial Cu 2 ZnSnSe 4 (CZTSe) thin films were grown by molecular beam epitaxy on GaAs(001) using two different growth processes, one containing an in-situ annealing stage as used for solar cell absorbers and one for which this step was omitted. Photoluminescences (PL) measurements carried out on these samples show no dependence of the emission shape on the excitation intensity at different temperatures ranging from 4 K to 300 K . To describe the PL measurements, we employ a model with fluctuating band edges in which the density of states of the resulting tail states does not seem to depend on the excited charge carrier density. In this interpretation, the PL measurements show that the annealing stage removes a defect level, which is present in the samples without this annealing.

  11. Wafer bonded epitaxial templates for silicon heterostructures

    NASA Technical Reports Server (NTRS)

    Atwater, Harry A., Jr. (Inventor); Zahler, James M. (Inventor); Morral, Anna Fontcubera I (Inventor)

    2008-01-01

    A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

  12. Domain epitaxy for thin film growth

    DOEpatents

    Narayan, Jagdish

    2005-10-18

    A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature T.sub.growth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature T.sub.anneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness h.sub.c. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

  13. Wafer bonded epitaxial templates for silicon heterostructures

    DOEpatents

    Atwater, Jr., Harry A.; Zahler, James M.; Morral, Anna Fontcubera I

    2008-03-11

    A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

  14. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    SciTech Connect

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  15. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

    1995-01-01

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

  16. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, S.A.; Killeen, K.P.; Lear, K.L.

    1995-01-10

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time. 9 figures.

  17. Chemical Beam Epitaxy of ZnSe

    DTIC Science & Technology

    1990-10-17

    is curren:ly underway in Japan and Europe with major investment in funds and manpower. However, the problems which remain are largely still an issue...of availability of suitable materials, specifically availability of p-type ZnSe with sufficient useable hole carrier concentrations. The problem ...contract provided essential seed funding necessary to accumulate sufficient funds to build and equip a state-or-the-art chemical beam epitaxy facility at

  18. Ferroelastic twin structures in epitaxial WO3 thin films

    NASA Astrophysics Data System (ADS)

    Yun, Shinhee; Woo, Chang-Su; Kim, Gi-Yeop; Sharma, Pankaj; Lee, Jin Hong; Chu, Kanghyun; Song, Jong Hyun; Chung, Sung-Yoon; Seidel, Jan; Choi, Si-Young; Yang, Chan-Ho

    2015-12-01

    Tungsten trioxide is a binary oxide that has potential applications in electrochromic windows, gas sensors, photo-catalysts, and superconductivity. Here, we analyze the crystal structure of atomically flat epitaxial layers on YAlO3 single crystal substrates and perform nanoscale investigations of the ferroelastic twins revealing a hierarchical structure at multiple length scales. We have found that the finest stripe ferroelastic twin walls along pseudocubic <100> axes are associated with cooperative mosaic rotations of the monoclinic films and the larger stripe domains along pseudocubic <110> axes are created to reduce the misfit strain through a commensurate matching of an effective in-plane lattice parameter between film and substrate. The typical widths of the two fine and larger stripe domains increase with film thickness following a power law with scaling exponents of ˜0.6 and ˜0.4, respectively. We have also found that the twin structure can be readily influenced by illumination with an electron beam or a tip-based mechanical compression.

  19. Search for quantum size effects in ultrathin epitaxial metallic films

    NASA Astrophysics Data System (ADS)

    Badoz, P. A.; D'Avitaya, F. Arnaud; Rosencher, E.

    In order to investigate quantum size effects in ultrathin metal films, tunneling spectroscopy measurements have been performed in the epitaxial CoSi2/Si system, with a metal thickness ranging from 1000 Å down to 35 A, i.e. a few de Broglie wavelengths of electrons in CoSi 2. The resulting spectra show extremely rich sets of features, the origin of which are investigated. The peaks observed at low energy (-100 meV, +100 meV) are thickness independent and attributed to phonon emission by hot electrons. The peaks observed at higher energy (up to 600 meV) are thickness dependent but their physical origin is not yet fully ascertained. The absence of unambiguous electron quantization effects in these epitaxial films is discussed and tentatively attributed to small thickness fluctuations (of the order of a few monolayers), which tend to blur the quantization of the electronic energies. Nous avons étudié les effets de quantification électronique dans les films métalliques minces par spectroscopie tunnel des jonctions CoSi2/Si épitaxiées, pour des épaisseurs de film métallique variant de 1000 ? 35 A, i.e. quelques longueurs d'ondes de de Broglie des électrons dans le CoSi 2. Les spectres obtenus montrent un ensemble de structures extrêmement riche dont nous discutons l'origine physique. Les pics observés à faible énergie (-100 meV, + 100 meV) sont indépendants de I'épaisseur du film de CoSi2, et attribués à l'émission de phonons par les électrons chauds dans le silicium. L'origine des pics observés à plus forte énergie (jusqu'à 600 meV) et dont la position dépend de l'épaisseur du film, est encore incomplètement comprise. Nous discutons l'absence d'effets clairement reliés à la quantification du gaz d'électrons bidimensionnel dans ces films épitaxiés: celle-ci pourrait provenir de faibles fluctuations d'épaisseur (quelques monocouches) qui tendent à brouiller la quantification des énergies électroniques.

  20. Epitaxy: Programmable Atom Equivalents Versus Atoms.

    PubMed

    Wang, Mary X; Seo, Soyoung E; Gabrys, Paul A; Fleischman, Dagny; Lee, Byeongdu; Kim, Youngeun; Atwater, Harry A; Macfarlane, Robert J; Mirkin, Chad A

    2017-01-24

    The programmability of DNA makes it an attractive structure-directing ligand for the assembly of nanoparticle (NP) superlattices in a manner that mimics many aspects of atomic crystallization. However, the synthesis of multilayer single crystals of defined size remains a challenge. Though previous studies considered lattice mismatch as the major limiting factor for multilayer assembly, thin film growth depends on many interlinked variables. Here, a more comprehensive approach is taken to study fundamental elements, such as the growth temperature and the thermodynamics of interfacial energetics, to achieve epitaxial growth of NP thin films. Both surface morphology and internal thin film structure are examined to provide an understanding of particle attachment and reorganization during growth. Under equilibrium conditions, single crystalline, multilayer thin films can be synthesized over 500 × 500 μm(2) areas on lithographically patterned templates, whereas deposition under kinetic conditions leads to the rapid growth of glassy films. Importantly, these superlattices follow the same patterns of crystal growth demonstrated in atomic thin film deposition, allowing these processes to be understood in the context of well-studied atomic epitaxy and enabling a nanoscale model to study fundamental crystallization processes. Through understanding the role of epitaxy as a driving force for NP assembly, we are able to realize 3D architectures of arbitrary domain geometry and size.

  1. Epitaxial Crystal Growth: Methods and Materials

    NASA Astrophysics Data System (ADS)

    Capper, Peter; Irvine, Stuart; Joyce, Tim

    The epitaxial growth of thin films of material for a wide range of applications in electronics and optoelectronics is a critical activity in many industries. The original growth technique used, in most instances, was liquid-phase epitaxy (LPE), as this was the simplest and often the cheapest route to producing device-quality layers. These days, while some production processes are still based on LPE, most research into and (increasingly) much of the production of electronic and optoelectronic devices now centers on metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). These techniques are more versatile than LPE (although the equipment is more expensive), and they can readily produce multilayer structures with atomic-layer control, which has become more and more important in the type of nanoscale engineering used to produce device structures in as-grown multilayers. This chapter covers these three basic techniques, including some of their more common variants, and outlines the relative advantages and disadvantages of each. Some examples of growth in various important systems are also outlined for each of the three techniques.

  2. Selective epitaxy using the gild process

    DOEpatents

    Weiner, Kurt H.

    1992-01-01

    The present invention comprises a method of selective epitaxy on a semiconductor substrate. The present invention provides a method of selectively forming high quality, thin GeSi layers in a silicon circuit, and a method for fabricating smaller semiconductor chips with a greater yield (more error free chips) at a lower cost. The method comprises forming an upper layer over a substrate, and depositing a reflectivity mask which is then removed over selected sections. Using a laser to melt the unmasked sections of the upper layer, the semiconductor material in the upper layer is heated and diffused into the substrate semiconductor material. By varying the amount of laser radiation, the epitaxial layer is formed to a controlled depth which may be very thin. When cooled, a single crystal epitaxial layer is formed over the patterned substrate. The present invention provides the ability to selectively grow layers of mixed semiconductors over patterned substrates such as a layer of Ge.sub.x Si.sub.1-x grown over silicon. Such a process may be used to manufacture small transistors that have a narrow base, heavy doping, and high gain. The narrowness allows a faster transistor, and the heavy doping reduces the resistance of the narrow layer. The process does not require high temperature annealing; therefore materials such as aluminum can be used. Furthermore, the process may be used to fabricate diodes that have a high reverse breakdown voltage and a low reverse leakage current.

  3. Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO3 films

    PubMed Central

    Shin, Y. J.; Jeon, B. C.; Yang, S. M.; Hwang, I.; Cho, M. R.; Sando, D.; Lee, S. R.; Yoon, J.-G.; Noh, T. W.

    2015-01-01

    Switching dynamics of ferroelectric materials are governed by the response of domain walls to applied electric field. In epitaxial ferroelectric films, thermally-activated ‘creep’ motion plays a significant role in domain wall dynamics, and accordingly, detailed understanding of the system’s switching properties requires that this creep motion be taken into account. Despite this importance, few studies have investigated creep motion in ferroelectric films under ac-driven force. Here, we explore ac hysteretic dynamics in epitaxial BiFeO3 thin films, through ferroelectric hysteresis measurements, and stroboscopic piezoresponse force microscopy. We reveal that identically-fabricated BiFeO3 films on SrRuO3 or La0.67Sr0.33MnO3 bottom electrodes exhibit markedly different switching behaviour, with BiFeO3/SrRuO3 presenting essentially creep-free dynamics. This unprecedented result arises from the distinctive spatial inhomogeneities of the internal fields, these being influenced by the bottom electrode’s surface morphology. Our findings further highlight the importance of controlling interface and defect characteristics, to engineer ferroelectric devices with optimised performance. PMID:26014521

  4. HOT CELL BUILDING, TRA632, INTERIOR. HOT CELL NO. 1 (THE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    HOT CELL BUILDING, TRA-632, INTERIOR. HOT CELL NO. 1 (THE FIRST BUILT) IN LABORATORY 101. CAMERA FACES SOUTHEAST. SHIELDED OPERATING WINDOWS ARE ON LEFT (NORTH) SIDE. OBSERVATION WINDOW IS AT LEFT OF VIEW (ON WEST SIDE). PLASTIC COVERS SHROUD MASTER/SLAVE MANIPULATORS AT WINDOWS IN LEFT OF VIEW. NOTE MINERAL OIL RESERVOIR ABOVE "CELL 1" SIGN, INDICATING LEVEL OF THE FLUID INSIDE THE THICK WINDOWS. HOT CELL HAS BEVELED CORNER BECAUSE A SQUARED CORNER WOULD HAVE SUPPLIED UNNECESSARY SHIELDING. NOTE PUMICE BLOCK WALL AT LEFT OF VIEW. INL NEGATIVE NO. HD46-28-1. Mike Crane, Photographer, 2/2005 - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

  5. Hot ice computer

    NASA Astrophysics Data System (ADS)

    Adamatzky, Andrew

    2009-12-01

    We experimentally demonstrate that supersaturated solution of sodium acetate, commonly called ‘hot ice’, is a massively-parallel unconventional computer. In the hot ice computer data are represented by a spatial configuration of crystallization induction sites and physical obstacles immersed in the experimental container. Computation is implemented by propagation and interaction of growing crystals initiated at the data-sites. We discuss experimental prototypes of hot ice processors which compute planar Voronoi diagram, shortest collision-free paths and implement AND and OR logical gates.

  6. Flush-mounted hot film anemometer accuracy in pulsatile flow.

    PubMed

    Nandy, S; Tarbell, J M

    1986-08-01

    The accuracy of a flush-mounted hot film anemometer probe for wall shear stress measurements in physiological pulsatile flows was evaluated in fully developed pulsatile flow in a rigid straight tube. Measured wall shear stress waveform based on steady flow anemometer probe calibrations were compared to theoretical wall shear stress waveforms based on well-established theory and measured flow rate waveforms. The measured and theoretical waveforms were in close agreement during systole (average deviation of 14 percent at peak systole). As expected, agreement was poor during diastole because of flow reversal and diminished frequency response at low shear rate.

  7. A&M. Hot liquid waste treatment building (TAN616). Camera facing southwest. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. Hot liquid waste treatment building (TAN-616). Camera facing southwest. Oblique view of east and north walls. Note three corrugated pipes at lower left indicating location of underground hot waste storage tanks. Photographer: Ron Paarmann. Date: September 22, 1997. INEEL negative no. HD-20-1-4 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  8. Hot tub folliculitis

    MedlinePlus

    ... around the lower part of the hair shaft (hair follicles). It occurs when you come into contact with ... hot tub may help prevent the problem. Images Hair follicle anatomy References D'Agata E. Pseudomonas aeruginosa and ...

  9. Saturn's Hot Plasma Explosions

    NASA Video Gallery

    This animation based on data obtained by NASA's Cassini Spacecraft shows how the "explosions" of hot plasma on the night side (orange and white) periodically inflate Saturn's magnetic field (white ...

  10. Hot ammonia in Orion

    SciTech Connect

    Morris, M.; Palmer, P.; Zuckerman, B.

    1980-04-01

    Ten inversion lines from nonmetastable rotational levels of NH/sub 3/ have been detected in the Kleinmann-Low (KL) nebula in Orion. Six of these lines were previoulsy undetected. The emission arises from levels which have energies up to 1150 K above the ground state, indicating that the NH/sub 3/ is immersed in a hot, dense medium. Three well-defined kinematical components within KL are evident in emission from NH/sub 3/ and other molecules. The emission from hot NH/sub 3/ is dominated by the component having V/sub LSR/=5.2 km s/sup -1/ and ..delta..V =10--12 km s/sup -1/. A non-LTE analysis of NH/sub 3/ emission from this ''hot core'' component reveals that the minimum particle density in this source is approx.5 x 10 cm/sup -3/, and that the kinetic temperature is > or approx. =220 K. The diameter of the hot core source is probably within a factor of 2 to 6'' (5 x 10/sup 16/ cm). The hot core is undoubtedly associated with one of the compact infrared sources in KL, and we suggest on the basis of position and velocity coincidences that it is IRc2. The hot core appears to contain about one Jeans mass at the inferred temperature and density. We therefore suggest that this object is a very young protostar which is still in the throes of its initial collapse.

  11. One-dimensional domain walls in thin ferromagnetic films with fourfold anisotropy

    NASA Astrophysics Data System (ADS)

    Lund, Ross G.; Muratov, Cyrill B.

    2016-06-01

    We study the properties of domain walls and domain patterns in ultrathin epitaxial magnetic films with two orthogonal in-plane easy axes, which we call fourfold materials. In these materials, the magnetization vector is constrained to lie entirely in the film plane and has four preferred directions dictated by the easy axes. We prove the existence of {{90}\\circ} and {{180}\\circ} domain walls in these materials as minimizers of a nonlocal one-dimensional energy functional. Further, we investigate numerically the role of the considered domain wall solutions for pattern formation in a rectangular sample.

  12. Axions as hot and cold dark matter

    SciTech Connect

    Jeong, Kwang Sik; Kawasaki, Masahiro; Takahashi, Fuminobu E-mail: kawasaki@icrr.u-tokyo.ac.jp

    2014-02-01

    The presence of a hot dark matter component has been hinted at 3σ by a combination of the results from different cosmological observations. We examine a possibility that pseudo Nambu-Goldstone bosons account for both hot and cold dark matter components. We show that the QCD axions can do the job for the axion decay constant f{sub a}∼wall annihilation. We also investigate the cases of thermal QCD axions, pseudo Nambu-Goldstone bosons coupled to the standard model sector through the Higgs portal, and axions produced by modulus decay.

  13. Wall surveyor project report

    SciTech Connect

    Mullenhoff, D.J.; Johnston, B.C.; Azevedo, S.G.

    1996-02-22

    A report is made on the demonstration of a first-generation Wall Surveyor that is capable of surveying the interior and thickness of a stone, brick, or cement wall. LLNL`s Micropower Impulse Radar is used, based on emitting and detecting very low amplitude and short microwave impulses (MIR rangefinder). Six test walls were used. While the demonstrator MIR Wall Surveyor is not fieldable yet, it has successfully scanned the test walls and produced real-time images identifying the walls. It is planned to optimize and package the evaluation wall surveyor into a hand held unit.

  14. If walls could talk

    NASA Technical Reports Server (NTRS)

    Braam, J.; McIntire, L. V. (Principal Investigator)

    1999-01-01

    The plant cell wall is very complex, both in structure and function. The wall components and the mechanical properties of the wall have been implicated in conveying information that is important for morphogenesis. Proteoglycans, fragments of polysaccharides and the structural integrity of the wall may relay signals that influence cellular differentiation and growth control. Furthering our knowledge of cell wall structure and function is likely to have a profound impact on our understanding of how plant cells communicate with the extracellular environment.

  15. Sequential imposed layer epitaxy of cuprate films

    SciTech Connect

    Laguees, M.; Tebbji, H.; Mairet, V.; Hatterer, C.; Beuran, C.F.; Hass, N.; Xu, X.Z. ); Cavellin, C.D. )

    1994-02-01

    Layer-by-layer epitaxy has been used to grow cuprate films since the discovery of high-Tc compounds. This deposition technique is in principle suitable for the growth of layered crystalline structures. However, the sequential deposition of atomic layer by atomic layer of cuprate compounds has presently not been optimized. Nevertheless, this deposition process is the only one which allows one to build artificial cell structures such as Bi[sub 2]Sr[sub 2]Ca[sub (n[minus]1)]Cu[sub n]O[sub y] with n as large as 10. This process will also be the best one to grow films of the so-called infinite layer phase compounds belonging to the Sr[sub 1[minus]x]Ca[sub x]CuO[sub 2] family, in order to improve the transport properties and the morphological properties of the cuprate films. When performed at high substrate temperature (typically more than 600[degree]C), the layer-by-layer epitaxy of cuprates exhibits usually 3D aggregate nucleation. Then the growth of the film no longer obeys the layer-by-layer sequence imposed during the deposition. We present here two experimental situations of true 2D sequential imposed layer epitaxy; the growth at 500[degree]C under atomic oxygen pressure of Bi[sub 2]Sr[sub 2]CuO[sub 6] and of Sr[sub 1[minus]x]Ca[sub y]CuO[sub 2] phases. 20 refs., 2 figs.

  16. Epitaxy of layered semiconductor thin films

    NASA Astrophysics Data System (ADS)

    Brahim Otsmane, L.; Emery, J. Y.; Jouanne, M.; Balkanski, M.

    1993-03-01

    Epilayers of InSe on InSe(00.1) and GaSe(00.1) have been grown by the molecular beam epitaxy (MBE) technique. Raman spectroscopy was used for a characterization of the structure and crystallinity in InSe/InSe(00.1) (homoepitaxy) and InSe/GaSe(00.1) (heteroepitaxy). The Raman spectra of the InSe thin films are identical to those of polytype γ-InSe. An activation of the E(LO) mode at 211 cm -1 is observed in these films here. Scanning electron microscopy (SEM) is also used to investigate surfaces of these films.

  17. Epitaxial superlattices of ionic conductor oxides

    NASA Astrophysics Data System (ADS)

    Orsini, A.; Medaglia, P. G.; Sanna, S.; Traversa, E.; Licoccia, S.; Tebano, A.; Balestrino, G.

    2009-07-01

    Pulsed Laser Deposition technique was used to engineer heterostructures of Yttrium-stabilized Zirconia (YSZ) and Gadolinium-doped Ceria (GDC) on perovskite substrates like Neodymium Gallate (NGO) and Strontium Titanate (STO). Epitaxial superlattices of the same number of layers of both materials were deposited with each block thickness as thin as 2 unit cells up to 30 unit cells. X-ray diffraction (XRD) investigation of the (002) symmetrical reflection allowed to evaluate the amount of material deposited in each layer constituting the superlattices. (113) asymmetrical reflections were analyzed to investigate strain effects on YSZ and GDC lattice parameters, evidencing the cube on cube growth of these films.

  18. Perspective: Oxide molecular-beam epitaxy rocks!

    SciTech Connect

    Schlom, Darrell G.

    2015-06-01

    Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

  19. The hot list strategy.

    SciTech Connect

    Wos, L.; Pieper, G. W.; Mathematics and Computer Science

    1999-01-01

    Experimentation strongly suggests that, for attacking deep questions and hard problems with the assistance of an automated reasoning program, the more effective paradigms rely on the retention of deduced information. A significant obstacle ordinarily presented by such a paradigm is the deduction and retention of one or more needed conclusions whose complexity sharply delays their consideration. To mitigate the severity of the cited obstacle, I formulated and feature in this article the hot list strategy. The hot list strategy asks the researcher to choose, usually from among the input statements characterizing the problem under study, one or more statements that are conjectured to play a key role for assignment completion. The chosen statements--conjectured to merit revisiting, again and again--are placed in an input list of statements, called the hot list. When an automated reasoning program has decided to retain a new conclusion C--before any other statement is chosen to initiate conclusion drawing--the presence of a nonempty hot list (with an appropriate assignment of the input parameter known as heat) causes each inference rule in use to be applied to C together with the appropriate number of members of the hot list. Members of the hot list are used to complete applications of inference rules and not to initiate applications. The use of the hot list strategy thus enables an automated reasoning program to briefly consider a newly retained conclusion whose complexity would otherwise prevent its use for perhaps many CPU-hours. To give evidence of the value of the strategy, I focus on four contexts: (1) dramatically reducing the CPU time required to reach a desired goal, (2) finding a proof of a theorem that had previously resisted all but the more inventive automated attempts, (3) discovering a proof that is more elegant than previously known, and (4) answering a question that had steadfastly eluded researchers relying on an automated reasoning program. I also

  20. Thermoelectric power of a single-walled carbon nanotubes rope.

    PubMed

    Yu, Fang; Hu, Lijun; Zhou, Haiqing; Qiu, Caiyu; Yang, Huaichao; Chen, Minjiang; Lu, Jianglei; Sun, Lianfeng

    2013-02-01

    In this work, a rope of single-walled carbon nanotubes is prepared by using a diamond wire drawing die. At atmospheric condition, the electrical conductance and the thermoelectric voltage of single-walled carbon nanotubes rope have been investigated with the hot-side temperature ranging from 292 to 380 K, and cold-side temperature at 292 K. For different temperatures in the range of 292 to 380 K at hot-side, the current-voltage curves are almost parallel to each other, indicating that the electrical conductance does not change. The dynamic characteristics of voltage at positive, zero and negative current bias demonstrate that a thermoelectric voltage is induced with a direction from hot- to cold-side. The induced thermoelectric voltage shows linear dependence on the temperature difference between hot- and cold-side. The thermoelectric power of single-walled carbon nanotubes rope is found to be positive and has a value about 17.8 +/- 1.0 microV/K. This result suggests the hole-like carriers in single-walled carbon nanotubes rope. This study will pave the way for single-walled carbon nanotubes based thermoelectric devices.

  1. HotRegion: a database of predicted hot spot clusters

    PubMed Central

    Cukuroglu, Engin; Keskin, Ozlem

    2012-01-01

    Hot spots are energetically important residues at protein interfaces and they are not randomly distributed across the interface but rather clustered. These clustered hot spots form hot regions. Hot regions are important for the stability of protein complexes, as well as providing specificity to binding sites. We propose a database called HotRegion, which provides the hot region information of the interfaces by using predicted hot spot residues, and structural properties of these interface residues such as pair potentials of interface residues, accessible surface area (ASA) and relative ASA values of interface residues of both monomer and complex forms of proteins. Also, the 3D visualization of the interface and interactions among hot spot residues are provided. HotRegion is accessible at http://prism.ccbb.ku.edu.tr/hotregion. PMID:22080558

  2. Epitaxial Crystal Silicon Absorber Layers and Solar Cells Grown at 1.8 Microns per Minute: Preprint

    SciTech Connect

    Bobela, D. C.; Teplin, C. W.; Young, D. L.; Branz, H. M.; Stradins, P.

    2011-07-01

    We have grown device-quality epitaxial silicon thin films at growth rates up to 1.8 μm/min, using hot-wire chemical vapor deposition from silane at substrate temperatures below 750 degrees C. At these rates, which are more than 30 times faster than those used by the amorphous and nanocrystalline Si industry, capital costs for large-scale solar cell production would be dramatically reduced, even for cell absorber layers up to 10 ?m thick. We achieved high growth rates by optimizing the three key parameters: silane flow, depletion, and filament geometry, based on our model developed earlier. Hydrogen coverage of the filament surface likely limits silane decomposition and growth rate at high system pressures. No considerable deterioration in PV device performance is observed when grown at high rate, provided that the epitaxial growth is initiated at low rate. A simple mesa device structure (wafer/epi Si/a-Si(i)/a-Si:H(p)/ITO) with a 2.3 um epitaxial silicon absorber layer was grown at 700 nm/min. The finished device had an open-circuit voltage of 0.424 V without hydrogenation treatment.

  3. Subcooled Boiling Near a Heated Wall

    SciTech Connect

    T.A. Trabold; C.C. Maneri; P.F. Vassallo; D.M. Considine

    2000-10-27

    Experimental measurements of void fraction, bubble frequency, and velocity are obtained in subcooled R-134a flowing over a heated flat plate near an unheated wall and compared to analytical predictions. The measurements were obtained for a fixed system pressure and mass flow rate (P = 2.4 MPa and w = 106 kg/hr) at various inlet liquid temperatures. During the experiments, electrical power was applied at a constant rate to one side of the test section. The local void fraction data, acquired with a hot-film anemometer probe, showed the existence of a significant peak near the heated wall and a smaller secondary peak near the unheated wall for the larger inlet subcoolings. Local vapor velocity data, taken with the hot-film probe and a laser Doppler velocimeter, showed broad maxima near the centerline between the heated and unheated plates. Significant temperature gradients near the heated wall were observed for large inlet subcooling. Bubble size data, inferred from measurements of void fraction, bubble frequency and vapor velocity, when combined with the measured bubble chord length distributions illustrate the transition from pure three dimensional spherical to two-dimensional planar bubble flow, the latter being initiated when the bubbles fill the gap between the plates. These various two-phase flow measurements were used for development of a multidimensional, four-field calculational method; comparisons of the data to the calculations show reasonable agreement.

  4. IR Hot Wave

    SciTech Connect

    Graham, T. B.

    2010-04-01

    The IR Hot Wave{trademark} furnace is a breakthrough heat treatment system for manufacturing metal components. Near-infrared (IR) radiant energy combines with IR convective heating for heat treating. Heat treatment is an essential process in the manufacture of most components. The controlled heating and cooling of a metal or metal alloy alters its physical, mechanical, and sometimes chemical properties without changing the object's shape. The IR Hot Wave{trademark} furnace offers the simplest, quickest, most efficient, and cost-effective heat treatment option for metals and metal alloys. Compared with other heat treatment alternatives, the IR Hot Wave{trademark} system: (1) is 3 to 15 times faster; (2) is 2 to 3 times more energy efficient; (3) is 20% to 50% more cost-effective; (4) has a {+-}1 C thermal profile compared to a {+-}10 C thermal profile for conventional gas furnaces; and (5) has a 25% to 50% smaller footprint.

  5. Hot Oil Removes Wax

    NASA Technical Reports Server (NTRS)

    Herzstock, James J.

    1991-01-01

    Mineral oil heated to temperature of 250 degrees F (121 degrees C) found effective in removing wax from workpieces after fabrication. Depending upon size and shape of part to be cleaned of wax, part immersed in tank of hot oil, and/or interior of part flushed with hot oil. Pump, fittings, and ancillary tooling built easily for this purpose. After cleaning, innocuous oil residue washed off part by alkaline aqueous degreasing process. Serves as relatively safe alternative to carcinogenic and environmentally hazardous solvent perchloroethylene.

  6. Epitaxial thick film high-Tc SQUIDs

    NASA Astrophysics Data System (ADS)

    Faley, M. I.; Mi, S. B.; Jia, C. L.; Poppe, U.; Urban, K.; Fagaly, R. L.

    2008-02-01

    Low-noise operation of superconducting quantum interference devices (SQUIDs) in magnetic fields requires high critical current and strong pinning of vortices in the superconducting electrodes and in the flux transformer. Crack-free epitaxial high-Tc dc-SQUID structures with a total thickness ?5 μm and a surface roughness determined by 30 nm high growth spirals were prepared with YBa2Cu3O7-x (YBCO) films on MgO substrates buffered by a SrTiO3/BaZrO3-bilayer. HRTEM demonstrated a high quality epitaxial growth of the films. The YBCO films and SQUID structures deposited on the buffered MgO substrates had a superconducting transition temperature Tc exceeding 91 K and critical current densities Jc > 3 MA/cm2 at 77 K up to a thickness ~5 μm. The application of thicker superconducting and insulator films helped us to increase the critical current and dynamic range of the multilayer high-Tc flux transformer and improve the insulation between the superconducting layers. An optimization of SQUID inductance allowed us to fabricate 8 mm SQUID magnetometers with SQUID voltage swings of ~60 μV and a field resolution of ~30 fT/√Hz at 77 K.

  7. Graphene nanoribbons epitaxy on boron nitride

    NASA Astrophysics Data System (ADS)

    Lu, Xiaobo; Yang, Wei; Wang, Shuopei; Wu, Shuang; Chen, Peng; Zhang, Jing; Zhao, Jing; Meng, Jianling; Xie, Guibai; Wang, Duoming; Wang, Guole; Zhang, Ting Ting; Watanabe, Kenji; Taniguchi, Takashi; Yang, Rong; Shi, Dongxia; Zhang, Guangyu

    2016-03-01

    In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ˜15 nm to ˜150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ˜20 000 cm2 V-1 s-1 for ˜100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moiré pattern induced quasi-one-dimensional superlattice with a periodicity of ˜15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BN substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.

  8. 2D vibrational properties of epitaxial silicene on Ag(111)

    NASA Astrophysics Data System (ADS)

    Solonenko, Dmytro; Gordan, Ovidiu D.; Le Lay, Guy; Sahin, Hasan; Cahangirov, Seymur; Zahn, Dietrich R. T.; Vogt, Patrick

    2017-03-01

    The two-dimensional silicon allotrope, silicene, could spur the development of new and original concepts in Si-based nanotechnology. Up to now silicene can only be epitaxially synthesized on a supporting substrate such as Ag(111). Even though the structural and electronic properties of these epitaxial silicene layers have been intensively studied, very little is known about its vibrational characteristics. Here, we present a detailed study of epitaxial silicene on Ag(111) using in situ Raman spectroscopy, which is one of the most extensively employed experimental techniques to characterize 2D materials, such as graphene, transition metal dichalcogenides, and black phosphorous. The vibrational fingerprint of epitaxial silicene, in contrast to all previous interpretations, is characterized by three distinct phonon modes with A and E symmetries. Both, energies and symmetries of theses modes are confirmed by ab initio theory calculations. The temperature dependent spectral evolution of these modes demonstrates unique thermal properties of epitaxial silicene and a significant electron-phonon coupling. These results unambiguously support the purely two-dimensional character of epitaxial silicene up to about 300 °C, whereupon a 2D-to-3D phase transition takes place. The detailed fingerprint of epitaxial silicene will allow us to identify it in different environments or to study its modifications.

  9. Comparison of Epitaxial Growth Techniques for III-V Layer Structures

    DTIC Science & Technology

    1992-05-22

    FOR Ill-V LAYER STRUCTURES DTIC byS ELECTE G. B. STRINGFELLOW MAY 2 819S2 A Prepared for Publication in the Proceedings of croissance de cristaux et de...epitaxial growth techniques have been used for semiconductors, including liquid phase epitaxy (LPE), chloride vapor phase epitaxy (CIVPE) using...MBE (GSMBE), organometallic MBE (OMMBE or MOMBE), and chemical beam epitaxy (CBE). II. LIQUID PHASE EPITAXY The first technique listed, LPE, was one of

  10. Deposition of epitaxial Cu 2O films on (100) MgO by laser ablation and their processing using ion beams

    NASA Astrophysics Data System (ADS)

    Ogale, S. B.; Bilurkar, P. G.; Mate, Nitant; Parikh, Nalin; Patnaik, B.

    1993-03-01

    Epitaxial thin films of Cu2O have been deposited on (100) MgO substrates by pulsed excimer laser ablation technique. Chemical polishing of the substrates by etching them in hot phosphoric acid prior to film deposition is found to be a critical step in realizing epitaxy. A KrF excimer laser operating at 248 nm wavelengths was used for ablation. The depositions were carried out at the laser energy density of 2 J/cm2 and the pulse repetition rate of 5 Hz. The substrate temperature was held at 700°C and the oxygen partial pressure during deposition and cooling was 10-3 Torr. The epitaxial nature of the deposited films was established via X-ray diffraction (XRD) and Rutherford back-scattering (RBS) channelling measurements. The epitaxial films thus obtained were then subjected to ion bombardment for studies of damage formation. Implantations were carried out using 110 keV Ar+ ions over a dose range between 5 x 1014 and 1.5 x 1016 ions/cmz. The as-grown and implanted samples were subjected to resistivity versus temperature measurements in view of the importance of the Cu-O system in the context of the phenomenon of high temperature superconductivity.

  11. Hot off the Press

    ERIC Educational Resources Information Center

    Brisco, Nicole D.

    2007-01-01

    In the past, the newspaper was one of the world's most used sources of information. Recently, however, its use has declined due to the popularity of cable television and the Internet. Yet the idea of reading the morning paper with a hot cup of coffee holds many warm memories for children who watched their parents in this daily ritual. In this…

  12. Zen Hot Dog Molecules

    ERIC Educational Resources Information Center

    Ryan, Dennis

    2009-01-01

    Substituted cycloalkanes with one branch illustrating each topic in an instructional unit can serve as summaries or reviews in courses of organic chemistry. The hungry Zen master told the hot dog vendor to make him one with everything. You can do the same for your students.

  13. Zen Hot Dog Molecules

    NASA Astrophysics Data System (ADS)

    Ryan, Dennis

    2009-04-01

    Substituted cycloalkanes with one branch illustrating each topic in an instructional unit can serve as summaries or reviews in courses of organic chemistry. The hungry Zen master told the hot dog vendor to make him one with everything. You can do the same for your students.

  14. What's Hot? What's Not?

    ERIC Educational Resources Information Center

    Buczynski, Sandy

    2006-01-01

    When Goldilocks finds three bowls of porridge at different temperatures in the three bears' house, she accurately assesses the situation and comes up with one of the most recognizable lines in children's literature," This porridge is too hot; this porridge is too cold; aahh, this porridge is just right!" Goldilocks' famous line is a perfect…

  15. Microstructural, Magnetic Anisotropy, and Magnetic Domain Structure Correlations in Epitaxial FePd Thin Films with Perpendicular Magnetic Anisotropy

    NASA Technical Reports Server (NTRS)

    Skuza, J. R.; Clavero, C.; Yang, K.; Wincheski, B.; Lukaszew, R. A.

    2009-01-01

    L1(sub 0)-ordered FePd epitaxial thin films were prepared using dc magnetron sputter deposition on MgO (001) substrates. The films were grown with varying thickness and degree of chemical order to investigate the interplay between the microstructure, magnetic anisotropy, and magnetic domain structure. The experimentally measured domain size/period and magnetic anisotropy in this high perpendicular anisotropy system were found to be correlated following the analytical energy model proposed by Kooy and Enz that considers a delicate balance between the domain wall energy and the demagnetizing stray field energy.

  16. Complex oxide ferroelectrics: Electrostatic doping by domain walls

    DOE PAGES

    Maksymovych, Petro

    2015-06-19

    Electrically conducting interfaces can form, rather unexpectedly, by breaking the translational symmetry of electrically insulating complex oxides. For example, a nanometre-thick heteroepitaxial interface between electronically insulating LaAlO3 and SrTiO3 supports a 2D electron gas1 with high mobility of >1,000 cm2 V-1 s-1 (ref. 2). Such interfaces can exhibit magnetism, superconductivity and phase transitions that may form the functional basis of future electronic devices2. A peculiar conducting interface can be created within a polar ferroelectric oxide by breaking the translational symmetry of the ferroelectric order parameter and creating a so-called ferroelectric domain wall (Fig. 1a,b). If the direction of atomic displacementsmore » changes at the wall in such a way as to create a discontinuity in the polarization component normal to the wall (Fig. 1a), the domain wall becomes electrostatically charged. It may then attract compensating mobile charges of opposite sign produced by dopant ionization, photoexcitation or other effects, thereby locally, electrostatically doping the host ferroelectric film. In contrast to conductive interfaces between epitaxially grown oxides, domain walls can be reversibly created, positioned and shaped by electric fields, enabling reconfigurable circuitry within the same volume of the material. Now, writing in Nature Nanotechnology, Arnaud Crassous and colleagues at EPFL and University of Geneva demonstrate control and stability of charged conducting domain walls in ferroelectric thin films of BiFeO3 down to the nanoscale.« less

  17. Droplet Epitaxy Image Contrast in Mirror Electron Microscopy

    NASA Astrophysics Data System (ADS)

    Kennedy, S. M.; Zheng, C. X.; Jesson, D. E.

    2017-01-01

    Image simulation methods are applied to interpret mirror electron microscopy (MEM) images obtained from a movie of GaAs droplet epitaxy. Cylindrical symmetry of structures grown by droplet epitaxy is assumed in the simulations which reproduce the main features of the experimental MEM image contrast, demonstrating that droplet epitaxy can be studied in real-time. It is therefore confirmed that an inner ring forms at the droplet contact line and an outer ring (or skirt) occurs outside the droplet periphery. We believe that MEM combined with image simulations will be increasingly used to study the formation and growth of quantum structures.

  18. Point defect balance in epitaxial GaSb

    SciTech Connect

    Segercrantz, N. Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F.; Song, Y.; Wang, S.

    2014-08-25

    Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

  19. Experimental Evidence for Epitaxial Silicene on Diboride Thin Films

    NASA Astrophysics Data System (ADS)

    Fleurence, Antoine; Friedlein, Rainer; Ozaki, Taisuke; Kawai, Hiroyuki; Wang, Ying; Yamada-Takamura, Yukiko

    2012-06-01

    As the Si counterpart of graphene, silicene may be defined as an at least partially sp2-hybridized, atom-thick honeycomb layer of Si that possesses π-electronic bands. Here we show that two-dimensional, epitaxial silicene forms through surface segregation on zirconium diboride thin films grown on Si wafers. A particular buckling of silicene induced by the epitaxial relationship with the diboride surface leads to a direct π-electronic band gap at the Γ point. These results demonstrate that the buckling and thus the electronic properties of silicene are modified by epitaxial strain.

  20. Multifunctional epitaxial systems on silicon substrates

    NASA Astrophysics Data System (ADS)

    Singamaneni, Srinivasa Rao; Prater, John Thomas; Narayan, Jagdish

    2016-09-01

    Multifunctional heterostructures can exhibit a wide range of functional properties, including colossal magneto-resistance, magnetocaloric, and multiferroic behavior, and can display interesting physical phenomena including spin and charge ordering and strong spin-orbit coupling. However, putting this functionality to work remains a challenge. To date, most of the work reported in the literature has dealt with heterostructures deposited onto closely lattice matched insulating substrates such as DyScO3, SrTiO3 (STO), or STO buffered Si(100) using concepts of lattice matching epitaxy (LME). However, strain in heterostructures grown by LME is typically not fully relaxed and the layers contain detrimental defects such as threading dislocations that can significantly degrade the physical properties of the films and adversely affect the device characteristics. In addition, most of the substrates are incompatible with existing CMOS-based technology, where Si (100) substrates dominate. This review discusses recent advances in the integration of multifunctional oxide and non-oxide materials onto silicon substrates. An alternative thin film growth approach, called "domain matching epitaxy," is presented which identifies approaches for minimizing lattice strain and unwanted defects in large misfit systems (7%-25% and higher). This approach broadly allows for the integration of multifunctional materials onto silicon substrates, such that sensing, computation, and response functions can be combined to produce next generation "smart" devices. In general, pulsed laser deposition has been used to epitaxially grow these materials, although the concepts developed here can be extended to other deposition techniques, as well. It will be shown that TiN and yttria-stabilized zirconia template layers provide promising platforms for the integration of new functionality into silicon-based computer chips. This review paper reports on a number of thin-film heterostructure systems that span a

  1. The Lamportian cell wall

    SciTech Connect

    Keiliszewski, M.; Lamport, D. )

    1991-05-01

    The Lamportian Warp-Weft hypothesis suggests a cellulose-extensin interpenetrating network where extensin mechanically couples the load-bearing cellulose microfibrils in a wall matrix that is best described as a microcomposite. This model is based on data gathered from the extensin-rich walls of tomato and sycamore cell suspension culture, wherein extensin precursors are insolubilized into the wall by undefined crosslinks. The authors recent work with cell walls isolated from intact tissue as well as walls from suspension cultured cells of the graminaceous monocots maize and rice, the non-graminaceous monocot asparagus, the primitive herbaceous dicot sugar beet, and the gymnosperm Douglas Fir indicate that although extensins are ubiquitous to all plant species examined, they are not the major structural protein component of most walls examined. Amino acid analyses of intact and HF-treated walls shows a major component neither an HRGP, nor directly comparable to the glycine-rich wall proteins such as those associated with seed coat walls or the 67 mole% glycine-rich proteins cloned from petunia and soybean. Clearly, structural wall protein alternatives to extensin exist and any cell wall model must take that into account. If we assume that extracellular matrices are a priori network structures, then new Hypless' structural proteins in the maize cell wall raise questions about the sort of network these proteins create: the kinds of crosslinks involved; how they are formed; and the roles played by the small amounts of HRGPs.

  2. Halogenation of microcapsule walls

    NASA Technical Reports Server (NTRS)

    Davis, T. R.; Schaab, C. K.; Scott, J. C.

    1972-01-01

    Procedure for halogenation of confining walls of both gelatin and gelatin-phenolic resin capsules is similar to that used for microencapsulation. Ten percent halogen content renders capsule wall nonburning; any higher content enhances flame-retardant properties of selected internal phase material. Halogenation decreases permeability of wall material to encapsulated materials.

  3. Effects of sapphire nitridation and growth temperature on the epitaxial growth of hexagonal boron nitride on sapphire

    NASA Astrophysics Data System (ADS)

    Ahmed, Kawser; Dahal, Rajendra; Weltz, Adam; J-Q Lu, James; Danon, Yaron; Bhat, Ishwara B.

    2017-01-01

    This paper reports on the epitaxial growth of hexagonal boron nitride (hBN) films on sapphire substrates in a cold wall chemical vapor deposition (CVD) system where different sapphire nitridation and hBN growth temperatures were employed. A thin and amorphous nitridated layer was formed at a low temperature (850 °C), which enabled subsequent epitaxial hBN growth at 1350 °C. The influences of the sapphire nitridation temperature and the growth temperature on the film quality were analyzed by x-ray diffraction (XRD) measurements. Higher than optimum nitridation and growth temperatures improve the crystalline quality of the nitridated layer, but does not favor the epitaxial growth of hBN. hBN films grown at the optimum conditions exhibit the c-lattice constant of 6.66 Å from the XRD θ–2θ scan and the characteristic in plane stretching vibration at 1370.5 cm‑1 from Raman spectroscopy. X-ray photoelectron spectroscopy analysis confirmed the formation of stoichiometric hBN films with excellent uniformity.

  4. Growth and characterization of GaAs, AlGaAs and their heterostructures by organometallic vapor phase epitaxy

    SciTech Connect

    Shealy, J.R.

    1983-01-01

    Organometallic Vapor Phase Epitaxy (OMVPE) is a cold wall vapor desposition technique using organometallic and/or hydride sources for the fabrication of a variety of epitaxial compound semiconductor alloys on suitable substrates. The use of the OMVPE process to produce high quality GaAs, AlGaAs, and their heterostructures on GaAs substrates using trimethygalium (TMG), trimethylalumium (TMA), and arsine is described. For GaAs epitaxial films, the unintentional residual donor sand acceptors have been identified using far-infrared photo-ionization data, and low temperature photoluminescence, respectively, and their concentrations have been evaluated using Hall data. For the growth of AlGaAs films, it was observed that poor quality films were obtained due to oxygen contamination of the layer during growth. A series of graded bandgap heterostructures and abrupt quantum well heterostructures were grown over a variety of growth conditions. Composition gradings were controlled over a full range of alloy compositions on distances as small as 500 - 1000 A, and a 40 A quantum well heterostructure was obtained at low growth temperatures (550/sup 0/C). Finally, results are presented on a few devices which incorporate metallurgical junctions and heterojunctions with the GaAs/AlGaAs system. These devices include a microwave vertical FET structure, graded bandgap solar cells, and light emitting diodes.

  5. Epitaxial integration of nanowires in microsystems by local micrometer-scale vapor-phase epitaxy.

    PubMed

    Mølhave, Kristian; Wacaser, Brent A; Petersen, Dirch Hjorth; Wagner, Jakob B; Samuelson, Lars; Bøggild, Peter

    2008-10-01

    Free-standing epitaxially grown nanowires provide a controlled growth system and an optimal interface to the underlying substrate for advanced optical, electrical, and mechanical nanowire device connections. Nanowires can be grown by vapor-phase epitaxy (VPE) methods such as chemical vapor deposition (CVD) or metal organic VPE (MOVPE). However, VPE of semiconducting nanowires is not compatible with several microfabrication processes due to the high synthesis temperatures and issues such as cross-contamination interfering with the intended microsystem or the VPE process. By selectively heating a small microfabricated heater, growth of nanowires can be achieved locally without heating the entire microsystem, thereby reducing the compatibility problems. The first demonstration of epitaxial growth of silicon nanowires by this method is presented and shows that the microsystem can be used for rapid optimization of VPE conditions. The important issue of the cross-contamination of other parts of the microsystem caused by the local growth of nanowires is also investigated by growth of GaN near previously grown silicon nanowires. The design of the cantilever heaters makes it possible to study the grown nanowires with a transmission electron microscope without sample preparation.

  6. Multichannel temperature controller for hot air solar house

    NASA Technical Reports Server (NTRS)

    Currie, J. R.

    1979-01-01

    This paper describes an electronic controller that is optimized to operate a hot air solar system. Thermal information is obtained from copper constantan thermocouples and a wall-type thermostat. The signals from the thermocouples are processed through a single amplifier using a multiplexing scheme. The multiplexing reduces the component count and automatically calibrates the thermocouple amplifier. The processed signals connect to some simple logic that selects one of the four operating modes. This simple, inexpensive, and reliable scheme is well suited to control hot air solar systems.

  7. Silver plating technique seals leaks in thin wall tubing joints

    NASA Technical Reports Server (NTRS)

    Blenderman, W. H.

    1966-01-01

    Leaks in thin wall tubing joints are sealed by cleaning and silver plating the hot gas side of the joint in the leakage area. The pressure differential across the silver during hydrostatic test and subsequent use forces the ductile silver into the leak area and seals it.

  8. 13. View of interior, north wall featuring fume hood, facing ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    13. View of interior, north wall featuring fume hood, facing north (Note: B/W scale on fume hood is in 1/2 ft increments) - Nevada Test Site, Reactor Maintenance & Disassembly Complex, Junior Hot Cell, Jackass Flats, Area 25, South of intersection of Roads F & G, Mercury, Nye County, NV

  9. Extrusion of small-diameter, thin-wall tungsten tubing

    NASA Technical Reports Server (NTRS)

    Blankenship, C. P.; Gyorgak, C. A.

    1967-01-01

    Small-diameter, thin-wall seamless tubing of tungsten has been fabricated in lengths of up to 10 feet by hot extrusion over a floating mandrel. Extrusion of 0.50-inch-diameter tubing over 0.4-inch-diameter mandrels was accomplished at temperatures ranging from 3000 degrees to 4000 degrees F.

  10. Low energy dislocation structures in epitaxy

    NASA Technical Reports Server (NTRS)

    Van Der Merwe, Jan H.; Woltersdorf, J.; Jesser, W. A.

    1986-01-01

    The principle of minimum energy was applied to epitaxial interfaces to show the interrelationship beteen misfit, overgrowth thickness and misfit dislocation spacing. The low energy dislocation configurations were presented for selected interfacial geometries. A review of the interfacial energy calculations was made and a critical assessment of the agreement between theory and experiment was presented. Modes of misfit accommodation were presented with emphasis on the distinction between kinetic effects and equilibrium conditions. Two-dimensional and three-dimensional overgrowths were treated together with interdiffusion-modified interfaces, and several models of interfacial structure were treated including the classical and the current models. The paper is concluded by indicating areas of needed investigation into interfacial structure.

  11. Infrared Rugates by Molecular Beam Epitaxy

    NASA Technical Reports Server (NTRS)

    Rona, M.

    1993-01-01

    Rugates are optical structures that have a sinusoidal index of refraction (harmonic gradient-index field). As their discrete high/ low index filter counterparts, they can be used as narrow rejection band filters. However, since rugates do not have abrupt interfaces, they tend to have a smaller absorption, hence deliver a higher in band reflectivity. The absence of sharp interfaces makes rugates even more desirable for high-energy narrow band reflectors. In this application, the lack of a sharp interface at the maximum internal standing wave electric field results in higher breakdown strengths. Our method involves fabricating rugates, with molecular beam epitaxy, on GaAs wafers as an Al(x)Ga(1-x)As single-crystal film.

  12. Mechanistic study of organometallic vapor phase epitaxy

    SciTech Connect

    Stringfellow, G.B.

    1990-12-31

    Only AsH{sub 3} and PH{sub 3} have been used as the group V source molecules for organometallic vapor phase epitaxy (OMVPE) of III/V semiconductors until recently, since they have been the only precursors yielding device quality materials. This paper reviews recent work on the pyrolysis of individual organometallic molecules, with emphasis on the group V sources, including: (1) the methylarsines, di- and tri-methylarsine, (2) the ethylarsines, mono-, di-, and tri-ethylarsine, and (3) the singly substituted tertiarybutyl arsine and phosphine molecules. The pyrolysis and growth reactions occurring when both group III and group V precursors are present simultaneously, i.e., the reactions occuring during OMVPE growth of several III/V semiconductors, are also briefly reviewed.

  13. Mechanistic study of organometallic vapor phase epitaxy

    SciTech Connect

    Stringfellow, G.B.

    1990-01-01

    Only AsH{sub 3} and PH{sub 3} have been used as the group V source molecules for organometallic vapor phase epitaxy (OMVPE) of III/V semiconductors until recently, since they have been the only precursors yielding device quality materials. This paper reviews recent work on the pyrolysis of individual organometallic molecules, with emphasis on the group V sources, including: (1) the methylarsines, di- and tri-methylarsine, (2) the ethylarsines, mono-, di-, and tri-ethylarsine, and (3) the singly substituted tertiarybutyl arsine and phosphine molecules. The pyrolysis and growth reactions occurring when both group III and group V precursors are present simultaneously, i.e., the reactions occuring during OMVPE growth of several III/V semiconductors, are also briefly reviewed.

  14. Metamorphic Epitaxy for Multijunction Solar Cells

    SciTech Connect

    France, Ryan M.; Dimroth, Frank; Grassman, Tyler J.; King, Richard R.

    2016-03-01

    Multijunction solar cells have proven to be capable of extremely high efficiencies by combining multiple semiconductor materials with bandgaps tuned to the solar spectrum. Reaching the optimum set of semiconductors often requires combining high-quality materials with different lattice constants into a single device, a challenge particularly suited for metamorphic epitaxy. In this article, we describe different approaches to metamorphic multijunction solar cells, including traditional upright metamorphic, state-of-the-art inverted metamorphic, and forward-looking multijunction designs on silicon. We also describe the underlying materials science of graded buffers that enables metamorphic subcells with low dislocation densities. Following nearly two decades of research, recent efforts have demonstrated high-quality lattice-mismatched multijunction solar cells with very little performance loss related to the mismatch, enabling solar-to-electric conversion efficiencies over 45%.

  15. Transport properties of epitaxial lift off films

    NASA Technical Reports Server (NTRS)

    Mena, R. A.; Schacham, S. E.; Young, P. G.; Haugland, E. J.; Alterovitz, S. A.

    1993-01-01

    Transport properties of epitaxially lifted-off (ELO) films were characterized using conductivity, Hall, and Shubnikov-de Haas measurements. A 10-15 percent increase in the 2D electron gas concentration was observed in these films as compared with adjacent conventional samples. We believe this result to be caused by a backgating effect produced by a charge build up at the interface of the ELO film and the quartz substrate. This increase results in a substantial decrease in the quantum lifetime in the ELO samples, by 17-30 percent, but without a degradation in carrier mobility. Under persistent photoconductivity, only one subband was populated in the conventional structure, while in the ELO films the population of the second subband was clearly visible. However, the increase of the second subband concentration with increasing excitation is substantially smaller than anticipated due to screening of the backgating effect.

  16. Epitaxial oxide bilayer on Pt(001) nanofacts.

    SciTech Connect

    Hennessy, D.; Komanicky, V.; Iddir, H.; Pierce, M. S.; Menzel, A.; Chang, K-C.; Barbour, A.; Zapol, P.; You, H.

    2012-01-01

    We observed an epitaxial, air-stable, partially registered (2 x 1) oxide bilayer on Pt (001) nanofacets [V. Komanicky, A. Menzel, K.-C. Chang, and H. You, J. Phys. Chem. 109, 23543 (2005)]. The bilayer is made of two half Pt layers; the top layer has four oxygen bonds and the second layer two. The positions and oxidation states of the Pt atoms are determined by analyzing crystal truncation rods and resonance scattering data. The positions of oxygen atoms are determined by density functional theory (DFT) calculations. Partial registry on the nanofacets and the absence of such registry on the extended Pt (001) surface prepared similarly are explained in DFT calculations by strain relief that can be accommodated only by nanoscale facets.

  17. Epitaxial oxide bilayer on Pt (001) nanofacets

    NASA Astrophysics Data System (ADS)

    Hennessy, Daniel; Komanicky, Vladimir; Iddir, Hakim; Pierce, Michael S.; Menzel, Andreas; Chang, Kee-Chul; Barbour, Andi; Zapol, Peter; You, Hoydoo

    2012-01-01

    We observed an epitaxial, air-stable, partially registered (2 × 1) oxide bilayer on Pt (001) nanofacets [V. Komanicky, A. Menzel, K.-C. Chang, and H. You, J. Phys. Chem. 109, 23543 (2005)]. The bilayer is made of two half Pt layers; the top layer has four oxygen bonds and the second layer two. The positions and oxidation states of the Pt atoms are determined by analyzing crystal truncation rods and resonance scattering data. The positions of oxygen atoms are determined by density functional theory (DFT) calculations. Partial registry on the nanofacets and the absence of such registry on the extended Pt (001) surface prepared similarly are explained in DFT calculations by strain relief that can be accommodated only by nanoscale facets.

  18. Shaping metal nanocrystals through epitaxial seeded growth

    SciTech Connect

    Habas, Susan E.; Lee, Hyunjoo; Radmilovic, Velimir; Somorjai,Gabor A.; Yang, Peidong

    2008-02-17

    Morphological control of nanocrystals has becomeincreasingly important, as many of their physical and chemical propertiesare highly shape-dependent. Nanocrystal shape control for both single andmultiple material systems, however, remains fairly empirical andchallenging. New methods need to be explored for the rational syntheticdesign of heterostructures with controlled morphology. Overgrowth of adifferent material on well-faceted seeds, for example, allows for the useof the defined seed morphology to control nucleation and growth of thesecondary structure. Here, we have used highly faceted cubic Pt seeds todirect the epitaxial overgrowth of a secondary metal. We demonstrate thisconcept with lattice matched Pd to produce conformal shape-controlledcore-shell particles, and then extend it to lattice mismatched Au to giveanisotropic growth. Seeding with faceted nanocrystals may havesignificant potential towards the development of shape-controlledheterostructures with defined interfaces.

  19. Friction boosted by spontaneous epitaxial rotations

    NASA Astrophysics Data System (ADS)

    Mandelli, Davide; Vanossi, Andrea; Manini, Nicola; Tosatti, Erio

    2015-03-01

    It is well known in surface science that incommensurate adsorbed monolayers undergo a spontaneous, energy-lowering epitaxial rotation from aligned to misaligned relative to a periodic substrate. We show first of all that a model 2D colloidal monolayer in an optical lattice, of recent importance as a frictional model, also develops in full equilibrium a small rotation angle, easy to detect in the Moiré pattern. The colloidal monolayer misalignment is then shown by extensive sliding simulations to increase the dynamic friction by a considerable factor over the aligned case. More generally, this example suggests that spontaneous rotations are rather ubiquitous and should not be ignored in all tribological phenomena between mismatched lattices. This work was mainly supported by the ERC Advanced Grant No. 320796-MODPHYSFRICT, and partly by SINERGIA contract CRSII2 136287, by PRIN/COFIN Contract 2010LLKJBX 004, by COST Action MP1303.

  20. Epitaxy on Substrates with Hexagonal Lattice Symmetry.

    NASA Astrophysics Data System (ADS)

    Braun, Max Willi Hermann

    A general description of epitaxy between thin films and substrates of general symmetry was developed from a model with rigid substrate and overgrowth and extended to include strain of the overgrowth. The overgrowth-substrate interaction was described by Fourier series, usually truncated, defined on the reciprocal lattice of the interface surfaces of the crystals. Energy considerations lead directly to a criterion that epitaxial configurations occur when a pair of surface reciprocal lattice vectors of the substrate and overgrowth coincide, equivalent to atomic row matching. This is analogous to the von Laue criterion and Bragg equations of diffraction theory, with a geometrical realization related to the Ewald construction. When generalized, misfit strain, the spacing, line sense and Burgers vectors of misfit dislocations and misfit verniers are obtained from the reciprocal lattices of crystals with any symmetry and misfit. The most general structures can be described with convenient unit cells by using structure factors. Homogeneous misfit strain, the interfacial atom positions after local relaxation and misfit and elastic (harmonic approximation) strain energies were obtained by direct minimization of the total interfacial energy of a large (1105 atoms), but finite, system. The local relaxation was calculated with a Finite Element formulation. Systems with fcc {111 } or bcc{ 110} overgrowths on fcc {111} or hcp{0001} substrates were studied with respect to substrate symmetry, overgrowth size and anisotropy of the overgrowth elastic constants. Configurations such as Kurdjumov-Sachs (KS), Nishiyama-Wassermann (NW) and a pseudomorphic phase (2DC) were explained, while several other higher order configurations were predicted. The inherent difference in nature between the KS and NW and their relationship to the 2DC were emphasized. Deviations from the ideal orientation of KS linked to anisotropy for systems undergoing misfit strain were discovered. Deviations were also

  1. STM Properties and Manipulation of Epitaxial Graphene

    NASA Astrophysics Data System (ADS)

    Thibado, Paul

    2014-03-01

    Epitaxial graphene grown on SiC has been identified as one of the most likely avenues to graphene-based electronics. Understanding how morphology affects electronic properties is therefore important. In our work, epitaxial graphene was grown on the polar and non-polar a-, m-, and r-crystallographic oriented surfaces of SiC, and was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface. A new STM technique called electrostatic-manipulation scanning tunneling microscopy (EM-STM) was performed to modify the morphology of the nano-ridges. By modeling the electrostatics involved in the EM-STM measurement, we estimate that a force of 5 nN and energy of 10 eV was required to alter the local interfacial bonding. At the atomic scale, STM images of Moire patterns reveal low-angle, twisted bi-layer graphene, grain boundaries, and an apparent lattice constant dilation. We will show that this dilation is due to the STM tip electrostatically dragging the graphene surface. Collaborators: P. Xu, D. Qi, M.L. Ackerman, S.D. Barber, J.K. Schoelz, and J. Thompson, Department of Physics, University of Arkansas, Fayetteville, AR, 72701, USA; V.D. Wheelr, R.L. Myers-Ward, C.R. Eddy, Jr., and D.K. Gaskill, U.S. Naval Research Laboratory, Washington, DC 20375, USA; and L.O. Nyakiti, Texas A&M University. Department of Physics, University of Arkansas, Fayetteville, AR, 72701, USA.

  2. What Is Hot Yoga (Bikram)?

    MedlinePlus

    Healthy Lifestyle Consumer health What is hot yoga? Answers from Edward R. Laskowski, M.D. Hot yoga is a vigorous form of yoga performed in a studio ... you check with your doctor before trying hot yoga if you have any health concerns. If you have heart disease, problems with ...

  3. Fluidized wall for protecting fusion chamber walls

    DOEpatents

    Maniscalco, James A.; Meier, Wayne R.

    1982-01-01

    Apparatus for protecting the inner wall of a fusion chamber from microexplosion debris, x-rays, neutrons, etc. produced by deuterium-tritium (DT) targets imploded within the fusion chamber. The apparatus utilizes a fluidized wall similar to a waterfall comprising liquid lithium or solid pellets of lithium-ceramic, the waterfall forming a blanket to prevent damage of the structural materials of the chamber.

  4. Wall contraction in Bloch wall films.

    NASA Technical Reports Server (NTRS)

    Bartran, D. S.; Bourne, H. C., Jr.

    1972-01-01

    The phenomenon of wall contraction characterized by a peak in the velocity-field relationship and a region of negative differential mobility is observed in uniaxial magnetic thin films of various magnetic properties by careful interrupted-pulse experiments. The observed results agree quite well with the theory for bulk samples when the extensive flux closure of thin film walls is accounted for by a suitable empirical scaling factor.

  5. Epitaxial CoSi2 on MOS devices

    DOEpatents

    Lim, Chong Wee; Shin, Chan Soo; Petrov, Ivan Georgiev; Greene, Joseph E.

    2005-01-25

    An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.

  6. Epitaxial growth of Si deposited on (100) Si

    NASA Astrophysics Data System (ADS)

    Hung, L. S.; Lau, S. S.; von Allmen, M.; Mayer, J. W.; Ullrich, B. M.; Baker, J. E.; Williams, P.; Tseng, W. F.

    1980-11-01

    Epitaxial growth of deposited amorphous Si on chemically cleaned (100) Si has been found and layer-by-layer growth occurred at rates comparable to those in self-ion-implanted-amorphous Si. There is no evidence for appreciable oxygen penetration into the deposited layer during storage in air. The critical factors in achieving epitaxial growth are fast (˜50 Å/sec) deposition of Si onto a surface cleaned with a HF dip as a last rinse before loading into the vacuum system. Channeling and transmission electron microscopy measurements indicated that the epitaxial layers are essentially defect free. Secondary-ion mass spectroscopic analysis showed about 1014 oxygen/cm2 at the amorphous/crystal interface. With either higher interfacial oxygen coverage or slow (˜2 Å/sec) deposition, epitaxial growth rates are significantly slower.

  7. Formation Of Ohmic Gold Contacts On Epitaxial GaAs

    NASA Technical Reports Server (NTRS)

    Hecht, Michael H.; Bell, L. Doug; Kaiser, William J.

    1991-01-01

    New low-temperature procedure used to deposit ohmic gold contacts on gallium arsenide epitaxial films, forming ohmic electrical contacts. Keeping wafer in vacuum until metallization prevents formation of rectifying contacts.

  8. Wall of fundamental constants

    SciTech Connect

    Olive, Keith A.; Peloso, Marco; Uzan, Jean-Philippe

    2011-02-15

    We consider the signatures of a domain wall produced in the spontaneous symmetry breaking involving a dilatonlike scalar field coupled to electromagnetism. Domains on either side of the wall exhibit slight differences in their respective values of the fine-structure constant, {alpha}. If such a wall is present within our Hubble volume, absorption spectra at large redshifts may or may not provide a variation in {alpha} relative to the terrestrial value, depending on our relative position with respect to the wall. This wall could resolve the contradiction between claims of a variation of {alpha} based on Keck/Hires data and of the constancy of {alpha} based on Very Large Telescope data. We derive the properties of the wall and the parameters of the underlying microscopic model required to reproduce the possible spatial variation of {alpha}. We discuss the constraints on the existence of the low-energy domain wall and describe its observational implications concerning the variation of the fundamental constants.

  9. Hot Spring Metagenomics

    PubMed Central

    López-López, Olalla; Cerdán, María Esperanza; González-Siso, María Isabel

    2013-01-01

    Hot springs have been investigated since the XIX century, but isolation and examination of their thermophilic microbial inhabitants did not start until the 1950s. Many thermophilic microorganisms and their viruses have since been discovered, although the real complexity of thermal communities was envisaged when research based on PCR amplification of the 16S rRNA genes arose. Thereafter, the possibility of cloning and sequencing the total environmental DNA, defined as metagenome, and the study of the genes rescued in the metagenomic libraries and assemblies made it possible to gain a more comprehensive understanding of microbial communities—their diversity, structure, the interactions existing between their components, and the factors shaping the nature of these communities. In the last decade, hot springs have been a source of thermophilic enzymes of industrial interest, encouraging further study of the poorly understood diversity of microbial life in these habitats. PMID:25369743

  10. The hot chocolate effect

    NASA Astrophysics Data System (ADS)

    Crawford, Frank S.

    1982-05-01

    The ''hot chocolate effect'' was investigated quantitatively, using water. If a tall glass cylinder is filled nearly completely with water and tapped on the bottom with a softened mallet one can detect the lowest longitudinal mode of the water column, for which the height of the water column is one-quarter wavelength. If the cylinder is rapidly filled with hot tap water containing dissolved air the pitch of that mode may descend by nearly three octaves during the first few seconds as the air comes out of solution and forms bubbles. Then the pitch gradually rises as the bubbles float to the top. A simple theoretical expression for the pitch ratio is derived and compared with experiment. The agreement is good to within the 10% accuracy of the experiments.

  11. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene

    NASA Astrophysics Data System (ADS)

    Lin, Y.-M.; Dimitrakopoulos, C.; Jenkins, K. A.; Farmer, D. B.; Chiu, H.-Y.; Grill, A.; Avouris, Ph.

    2010-02-01

    The high carrier mobility of graphene has been exploited in field-effect transistors that operate at high frequencies. Transistors were fabricated on epitaxial graphene synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff frequency of 100 gigahertz for a gate length of 240 nanometers. The high-frequency performance of these epitaxial graphene transistors exceeds that of state-of-the-art silicon transistors of the same gate length.

  12. Jupiter's Hot, Mushy Moon

    NASA Technical Reports Server (NTRS)

    Taylor, G. Jeffrey

    2003-01-01

    Jupiter's moon Io is the most volcanically active body in the Solar System. Observations by instruments on the Galileo spacecraft and on telescopes atop Mauna Kea in Hawai'i indicate that lava flows on Io are surprisingly hot, over 1200 oC and possibly as much as 1300 oC; a few areas might have lava flows as hot as 1500 oC. Such high temperatures imply that the lava flows are composed of rock that formed by a very large amount of melting of Io's mantle. This has led Laszlo Keszthelyi and Alfred S. McEwen of the University of Arizona and me to reawaken an old hypothesis that suggests that the interior of Io is a partially-molten mush of crystals and magma. The idea, which had fallen out of favor for a decade or two, explains high-temperature hot spots, mountains, calderas, and volcanic plains on Io. If correct, Io gives us an opportunity to study processes that operate in huge, global magma systems, which scientists believe were important during the early history of the Moon and Earth, and possibly other planetary bodies as well. Though far from proven, the idea that Io has a ocean of mushy magma beneath its crust can be tested with measurements by future spacecraft.

  13. An experimental study of near wall flow parameters in the blade end-wall corner region

    NASA Technical Reports Server (NTRS)

    Bhargava, Rakesh K.; Raj, Rishi S.

    1989-01-01

    The near wall flow parameters in the blade end-wall corner region is investigated. The blade end-wall corner region was simulated by mounting an airfoil section (NACA 65-015 base profile) symmetric blades on both sides of the flat plate with semi-circular leading edge. The initial 7 cm from the leading edge of the flat plate was roughened by gluing No. 4 floor sanding paper to artificially increase the boundary layer thickness on the flat plate. The initial flow conditions of the boundary layer upstream of the corner region are expected to dictate the behavior of flow inside the corner region. Therefore, an experimental investigation was extended to study the combined effect of initial roughness and increased level of free stream turbulence on the development of a 2-D turbulent boundary layer in the absence of the blade. The measurement techniques employed in the present investigation included, the conventional pitot and pitot-static probes, wall taps, the Preston tube, piezoresistive transducer and the normal sensor hot-wire probe. The pitot and pitot-static probes were used to obtain mean velocity profile measurements within the boundary layer. The measurements of mean surface static pressure were obtained with the surface static tube and the conventional wall tap method. The wall shear vector measurements were made with a specially constructed Preston tube. The flush mounted piezoresistive type pressure transducer were employed to measure the wall pressure fluctuation field. The velocity fluctuation measurements, used in obtaining the wall pressure-velocity correlation data, were made with normal single sensor hot-wire probe. At different streamwise stations, in the blade end-wall corner region, the mean values of surface static pressure varied more on the end-wall surface in the corner region were mainly caused by the changes in the curvature of the streamlines. The magnitude of the wall shear stress in the blade end-wall corner region increased significantly

  14. Epitaxial patterning of thin-films: conventional lithographies and beyond

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Krishnan, Kannan M.

    2014-09-01

    Thin-film based novel magnetic and electronic devices have entered a new era in which the film crystallography, structural coherence, and epitaxy play important roles in determining their functional properties. The capabilities of controlling such structural and functional properties are being continuously developed by various physical deposition technologies. Epitaxial patterning strategies further allow the miniaturization of such novel devices, which incorporates thin-film components into nanoscale architectures while keeping their functional properties unmodified from their ideal single-crystal values. In the past decade, epitaxial patterning methods on the laboratory scale have been reported to meet distinct scientific inquires, in which the techniques and processes used differ from one to the other. In this review we summarize many of these pioneering endeavors in epitaxial patterning of thin-film devices that use both conventional and novel lithography techniques. These methods demonstrate epitaxial patterning for a broad range of materials (metals, oxides, and semiconductors) and cover common device length scales from micrometer to sub-hundred nanometer. Whilst we have been motivated by magnetic materials and devices, we present our outlook on developing systematic-strategies for epitaxial patterning of functional materials which will pave the road for the design, discovery and industrialization of next-generation advanced magnetic and electronic nano-devices.

  15. Advances in Hot-Structure Development

    NASA Technical Reports Server (NTRS)

    Rivers, H. Kevin; Glass, David E.

    2006-01-01

    The National Aeronautics and Space Administration has actively participated in the development of hot structures technology for application to hypersonic flight systems. Hot structures have been developed for vehicles including the X-43A, X-37, and the Space Shuttle. These trans-atmospheric and atmospheric entry flight systems that incorporate hot-structures technology are lighter weight and require less maintenance than those that incorporate parasitic, thermal-protection materials that attach to warm or cool substructure. The development of hot structures requires a thorough understanding of material performance in an extreme environment, boundary conditions and load interactions, structural joint performance, and thermal and mechanical performance of integrated structural systems that operate at temperatures ranging from 1500 C to 3000 C, depending on the application. This paper will present recent advances in the development of hot structures, including development of environmentally durable, high temperature leading edges and control surfaces, integrated thermal protection systems, and repair technologies. The X-43A Mach-10 vehicle utilized carbon/carbon (C/C) leading edges on the nose, horizontal control surface, and vertical tail. The nose and vertical and horizontal tail leading edges were fabricated out of a 3:1 biased, high thermal conductivity C/C. The leading edges were coated with a three-layer coating comprised of a SiC conversion of the C/C, followed by a CVD layer of SiC, followed by a thin CVD layer of HfC. Work has also been performed on the development of an integrated structure and was focused on both hot and warm (insulated) structures and integrated fuselage/tank/TPS systems. The objective was to develop integrated multifunctional airframe structures that eliminate fragile external thermal-protection systems and incorporate the insulating function within the structure. The approach taken to achieve this goal was to develop candidate hypersonic

  16. Depomedroxyprogesterone acetate for hot flashes.

    PubMed

    Barton, Debra; Loprinzi, Charles; Quella, Susan; Sloan, Jeff; Pruthi, Sandya; Novotny, Paul

    2002-12-01

    To evaluate the efficacy of a long-acting preparation of medroxyprogesterone acetate for hot flash management, 3 men receiving androgen ablation therapy for prostate cancer and 15 women with a history of breast cancer were treated as part of clinical practice with three biweekly intramuscular injections of 500 mg depomedroxyprogesterone. A review of hot flash diaries and patient charts were completed to evaluate the effectiveness and tolerability of these injections for managing hot flashes. Treatment was associated with an approximate 90% decrease in hot flashes (95% CI 82-97%). Daily hot flash frequency decreased from a mean of 10.9 on the first day of treatment (95% CI 8.0-13.8 hot flashes per day) to a mean of 1.1 hot flashes 6 weeks later (95% CI 0.5-1.8 hot flashes) and to a mean of 0.7 hot flashes 12 weeks following therapy initiation (95% CI 0.1-1.2). Improvement in the hot flashes remained for months after discontinuing the injections in many patients. Reported side effects were minimal. This experience suggests that treatment with depomedroxyprogesterone may be an effective and well-tolerated option for the treatment of hot flashes.

  17. Liquid Wall Chambers

    SciTech Connect

    Meier, W R

    2011-02-24

    The key feature of liquid wall chambers is the use of a renewable liquid layer to protect chamber structures from target emissions. Two primary options have been proposed and studied: wetted wall chambers and thick liquid wall (TLW) chambers. With wetted wall designs, a thin layer of liquid shields the structural first wall from short ranged target emissions (x-rays, ions and debris) but not neutrons. Various schemes have been proposed to establish and renew the liquid layer between shots including flow-guiding porous fabrics (e.g., Osiris, HIBALL), porous rigid structures (Prometheus) and thin film flows (KOYO). The thin liquid layer can be the tritium breeding material (e.g., flibe, PbLi, or Li) or another liquid metal such as Pb. TLWs use liquid jets injected by stationary or oscillating nozzles to form a neutronically thick layer (typically with an effective thickness of {approx}50 cm) of liquid between the target and first structural wall. In addition to absorbing short ranged emissions, the thick liquid layer degrades the neutron flux and energy reaching the first wall, typically by {approx}10 x x, so that steel walls can survive for the life of the plant ({approx}30-60 yrs). The thick liquid serves as the primary coolant and tritium breeding material (most recent designs use flibe, but the earliest concepts used Li). In essence, the TLW places the fusion blanket inside the first wall instead of behind the first wall.

  18. PREFACE: Hot Quarks 2004

    NASA Astrophysics Data System (ADS)

    Antinori, Federico; Bass, Steffen A.; Bellwied, Rene; Ullrich, Thomas; Velkovska, Julia; Wiedemann, Urs

    2005-04-01

    Why another conference devoted to ultra-relativistic heavy-ion physics? As we looked around the landscape of the existing international conferences and workshops, we realized that there was not a single one tailored to the people who are most directly involved with the actual research work: students, post-docs, and junior faculty/research scientists. Of course there are schools, but that was not what we had in mind. We wanted a meeting where young researchers could come together to discuss in depth the physics that they are working on without any hindrance. The major conferences have very limited time for discussions which is often shared amongst the most established. This leaves little room for young people to ask their questions and to get the detailed feedback which they deserve and which satisfies their curiosity. A discussion-driven workshop, centering on those without whom there will be no future—that seemed like what was needed. And thus the Hot Quarks workshop was born. The aim of Hot Quarks was to enhance the direct exchange of scientific information among the younger members of the community, from both experiment and theory. Participation was by invitation only in order to emphasize the contributions from junior researchers. This approach makes the workshop unique among the many forums in the field. For young scientists it represented an opportunity for exposure that they would not have had in one of the major conferences. The hope is that this meeting has helped to stimulate the next generation of scientists in our field and, at the same time, strengthened their sense of community. It all came together from 18 24 July 2004, when the 77 participants met at The Inn at Snakedance in the Taos Ski Valley, New Mexico, USA, for the first Hot Quarks workshop. Photograph Participants gather in the sunshine at the foot of the Taos Ski Valley chairlift. By all accounts, Hot Quarks 2004 was a great success. Every participant had the opportunity to present her or

  19. Ultrafast electron dynamics in epitaxial graphene investigated with time- and angle-resolved photoemission spectroscopy

    NASA Astrophysics Data System (ADS)

    Ulstrup, Søren; Johannsen, Jens Christian; Crepaldi, Alberto; Cilento, Federico; Zacchigna, Michele; Cacho, Cephise; Chapman, Richard T.; Springate, Emma; Fromm, Felix; Raidel, Christian; Seyller, Thomas; Parmigiani, Fulvio; Grioni, Marco; Hofmann, Philip

    2015-04-01

    In order to exploit the intriguing optical properties of graphene it is essential to gain a better understanding of the light-matter interaction in the material on ultrashort timescales. Exciting the Dirac fermions with intense ultrafast laser pulses triggers a series of processes involving interactions between electrons, phonons and impurities. Here we study these interactions in epitaxial graphene supported on silicon carbide (semiconducting) and iridium (metallic) substrates using ultrafast time- and angle-resolved photoemission spectroscopy (TR-ARPES) based on high harmonic generation. For the semiconducting substrate we reveal a complex hot carrier dynamics that manifests itself in an elevated electronic temperature and an increase in linewidth of the π band. By analyzing these effects we are able to disentangle electron relaxation channels in graphene. On the metal substrate this hot carrier dynamics is found to be severely perturbed by the presence of the metal, and we find that the electronic system is much harder to heat up than on the semiconductor due to screening of the laser field by the metal.

  20. The Controller Synthesis of Metastable Oxides Utilizing Epitaxy and Epitaxial Stabilization

    SciTech Connect

    Schlom, Darrell

    2003-12-02

    Molecular beam epitaxy (MBE) has achieved unparalleled control in the integration of semiconductors at the nanometer. These advances were made through the use of epitaxy, epitaxial stabilization, and a combination of composition-control techniques including adsorption-controlled growth and RHEED-based composition control that we have developed, understood, and utilized for the growth of oxides. Also key was extensive characterization (utilizing RHEED, four-circle x-ray diffraction, AFM, TEM, and electrical characterization techniques) in order to study growth modes, optimize growth conditions, and probe the structural, dielectric, and ferroelectric properties of the materials grown. The materials that we have successfully engineered include titanates (PbTiO3, Bi4Ti3O12), tantalates (SrBi2Ta2O9), and niobates (SrBi2Nb2O9); layered combinations of these perovskite-related materials (Bi4Ti3O12-SrTiO3 and Bi4Ti3O12-PbTiO3 Aurivillius phases and metastable PbTiO3/SrTiO3 and BaTiO3/SrTiO3 superlattices), and new metastable phases (Srn+1TinO3n+1 Ruddlesden-Popper phases). The films were grown by reactive MBE and pulsed laser deposition (PLD). Many of these materials are either new or have been synthesized with the highest perfection ever reported. The controlled synthesis of such layered oxide heterostructures offers great potential for tailoring the superconducting, ferroelectric, and dielectric properties of these materials. These properties are important for energy technologies.

  1. Metallic Wall Hall Thrusters

    NASA Technical Reports Server (NTRS)

    Goebel, Dan Michael (Inventor); Hofer, Richard Robert (Inventor); Mikellides, Ioannis G. (Inventor)

    2016-01-01

    A Hall thruster apparatus having walls constructed from a conductive material, such as graphite, and having magnetic shielding of the walls from the ionized plasma has been demonstrated to operate with nearly the same efficiency as a conventional non-magnetically shielded design using insulators as wall components. The new design is believed to provide the potential of higher power and uniform operation over the operating life of a thruster device.

  2. High frequency conductivity of hot electrons in carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Amekpewu, M.; Mensah, S. Y.; Musah, R.; Mensah, N. G.; Abukari, S. S.; Dompreh, K. A.

    2016-05-01

    High frequency conductivity of hot electrons in undoped single walled achiral Carbon Nanotubes (CNTs) under the influence of ac-dc driven fields was considered. We investigated semi-classically Boltzmann's transport equation with and without the presence of the hot electrons' source by deriving the current densities in CNTs. Plots of the normalized current density versus frequency of ac-field revealed an increase in both the minimum and maximum peaks of normalized current density at lower frequencies as a result of a strong injection of hot electrons. The applied ac-field plays a twofold role of suppressing the space-charge instability in CNTs and simultaneously pumping an energy for lower frequency generation and amplification of THz radiations. These have enormous promising applications in very different areas of science and technology.

  3. Transient hot-film sensor response in a shock tube

    NASA Technical Reports Server (NTRS)

    Roberts, A. S., Jr.; Ortgies, K. R.; Gartenberg, E.

    1989-01-01

    Shock tube experiments were performed to determine the response of a hot-film sensor, mounted flush on the side wall of a shock tube, to unsteady flow behind a normal shock wave. The present experiments attempt to isolate the response of the anemometer due only to the change in convective heat transfer at the hot-film surface. The experiments, performed at low supersonic shock speeds in air, are described along with the data acquisition procedure. The change in convective heat transfer is deduced from the data and the results are compared with those from transient boundary layer theory and another set of experimental results. Finally, a transient local heat transfer coefficient is formulated for use as the forcing function in a hot-film sensor instrument model simulation.

  4. Not so hot "hot spots" in the oceanic mantle.

    PubMed

    Bonath, E

    1990-10-05

    Excess volcanism and crustal swelling associated with hot spots are generally attributed to thermal plumes upwelling from the mantle. This concept has been tested in the portion of the Mid-Atlantic Ridge between 34 degrees and 45 degrees (Azores hot spot). Peridotite and basalt data indicate that the upper mantle in the hot spot has undergone a high degree of melting relative to the mantle elsewhere in the North Atlantic. However, application of various geothermometers suggests that the temperature of equilibration of peridotites in the mantle was lower, or at least not higher, in the hot spot than elsewhere. The presence of H(2)O-rich metasomatized mantle domains, inferred from peridotite and basalt data, would lower the melting temperature of the hot spot mantle and thereby reconcile its high degree ofmelting with the lack of a mantle temperature anomaly. Thus, some so-called hot spots might be melting anomalies unrelated to abnormally high mantle temperature or thermal plumes.

  5. Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Zhang, Zhi; Lu, Zhen-Yu; Chen, Ping-Ping; Xu, Hong-Yi; Guo, Ya-Nan; Liao, Zhi-Ming; Shi, Sui-Xing; Lu, Wei; Zou, Jin

    2013-08-01

    In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.

  6. Hydride vapor phase epitaxy of aluminum nitride

    NASA Astrophysics Data System (ADS)

    Kamber, Derrick Shane

    AlN is a promising substrate material for AlGaN-based UV optoelectronic devices and high-power, high-frequency electronic devices. Since large-area bulk AlN crystals are not readily available, one approach to prepare AlN substrates is to heteroepitaxially deposit thick (e.g., 10-300+ mum) AlN layers by hydride vapor phase epitaxy. Initial efforts focused on growing AlN layers on sapphire substrates with growth rates up to 75 mum/hr. The resulting layers were colorless, smooth, and specular. Subsurface cracking, attributed to the plastic relief of tensile strain from island coalescence, was observed but did not adversely affect the surface morphology of the AlN layers. The surfaces possessed rms roughnesses as low as 0.316 nm over 5 x 5 mum2 sampling areas, but hexagonal hillock formation was observed for thick films grown at high growth rates. TEM revealed that the threading dislocation (TD) density of the films was 2 x 109 cm-2. The high TD densities for direct growth of AlN films on foreign substrates motivated the development of lateral epitaxial overgrowth approaches for defect reduction. Growth of AlN layers on patterned SiC substrates produced coalesced AlN films possessing TD densities below 8.3 x 106 cm -2 in the laterally grown wing regions, as compared to 1.8 x 109 cm-2 in the seed regions. These films, however, cracked on cooldown due to the difference in thermal expansion coefficients for AlN and SiC. To avoid this cracking, AlN layers were grown on patterned sapphire substrates. Although the films were able to be coalesced and contained few or no cracks, the TDs in these films were not confined to the seed regions. This produced a relatively uniform distribution of TDs over the surfaces of the films, with only a modest reduction in the TD density of 1 x 10 8 cm-2. Selective area growth of AlN was also pursued using Si3N4, SiO2, and Ti masks. Growth selectivity and film coalescence was observed for films grown on each masking material, but none of the

  7. Hot oiling spreadsheet

    SciTech Connect

    Mansure, A.J.

    1996-09-01

    One of the most common oil-field treatments is hot oiling to remove paraffin from wells. Even though the practice is common, the thermal effectiveness of the process is not commonly understood. In order for producers to easily understand the thermodynamics of hot oiling, a simple tool is needed for estimating downhole temperatures. Such a tool has been developed that was distributed as a compiled, public-domain-software spreadsheet. That spreadsheet has evolved into an interactive from on the World Wide Web and has been adapted into a Windows{trademark} program by Petrolite, St. Louis MO. The development of such a tools was facilitated by expressing downhole temperatures in terms of analytic formulas. Considerable algebraic work is required to develop such formulas. Also, the data describing hot oiling is customarily a mixture of practical units that must be converted to a consistent set of units. To facilitate the algebraic manipulations and to assure unit conversions are correct, during development parallel calculations were made using the spreadsheet and a symbolic mathematics program. Derivation of the formulas considered falling film flow in the annulus and started from the transient differential equations so that the effects of the heat capacity of the tubing and casing could be included. While this approach to developing a software product does not have the power and sophistication of a finite element or difference code, it produces a user friendly product that implements the equations solved with a minimum potential for bugs. This allows emphasis in development of the product to be placed on the physics.

  8. Hot air drum evaporator

    DOEpatents

    Black, Roger L.

    1981-01-01

    An evaporation system for aqueous radioactive waste uses standard 30 and 55 gallon drums. Waste solutions form cascading water sprays as they pass over a number of trays arranged in a vertical stack within a drum. Hot dry air is circulated radially of the drum through the water sprays thereby removing water vapor. The system is encased in concrete to prevent exposure to radioactivity. The use of standard 30 and 55 gallon drums permits an inexpensive compact modular design that is readily disposable, thus eliminating maintenance and radiation build-up problems encountered with conventional evaporation systems.

  9. Hot cell examination table

    DOEpatents

    Gaal, Peter S.; Ebejer, Lino P.; Kareis, James H.; Schlegel, Gary L.

    1991-01-01

    A table for use in a hot cell or similar controlled environment for use in examining specimens. The table has a movable table top that can be moved relative to a table frame. A shaft is fixedly mounted to the frame for axial rotation. A shaft traveler having a plurality of tilted rollers biased against the shaft is connected to the table top such that rotation of the shaft causes the shaft traveler to roll along the shaft. An electromagnetic drive is connected to the shaft and the frame for controllably rotating the shaft.

  10. Hot Subluminous Stars

    NASA Astrophysics Data System (ADS)

    Heber, U.

    2016-08-01

    Hot subluminous stars of spectral type B and O are core helium-burning stars at the blue end of the horizontal branch or have evolved even beyond that stage. Most hot subdwarf stars are chemically highly peculiar and provide a laboratory to study diffusion processes that cause these anomalies. The most obvious anomaly lies with helium, which may be a trace element in the atmosphere of some stars (sdB, sdO) while it may be the dominant species in others (He-sdB, He-sdO). Strikingly, the distribution in the Hertzsprung-Russell diagram of He-rich versus He-poor hot subdwarf stars of the globular clusters ω Cen and NGC 2808 differ from that of their field counterparts. The metal-abundance patterns of hot subdwarfs are typically characterized by strong deficiencies of some lighter elements as well as large enrichments of heavy elements. A large fraction of sdB stars are found in close binaries with white dwarf or very low-mass main sequence companions, which must have gone through a common-envelope (CE) phase of evolution. Because the binaries are detached they provide a clean-cut laboratory to study this important but yet poorly understood phase of stellar evolution. Hot subdwarf binaries with sufficiently massive white dwarf companions are viable candidate progenitors of type Ia supernovae both in the double degenerate as well as in the single degenerate scenario as helium donors for double detonation supernovae. The hyper-velocity He-sdO star US 708 may be the surviving donor of such a double detonation supernova. Substellar companions to sdB stars have also been found. For HW Vir systems the companion mass distribution extends from the stellar into the brown dwarf regime. A giant planet to the acoustic-mode pulsator V391 Peg was the first discovery of a planet that survived the red giant evolution of its host star. Evidence for Earth-size planets to two pulsating sdB stars have been reported and circumbinary giant planets or brown dwarfs have been found around HW

  11. MSFC hot air collectors

    NASA Technical Reports Server (NTRS)

    Anthony, K.

    1978-01-01

    A description of the hot air collector is given that includes a history of development, a history of the materials development, and a program summary. The major portion of the solar energy system cost is the collector. Since the collector is the heart of the system and the most costly subsystem, reducing the cost of producing collectors in large quantities is a major goal. This solar collector is designed to heat air and/or water cheaply and efficiently through the use of solar energy.

  12. Epitaxial oxidation of Ni-V biaxially textured tapes

    NASA Astrophysics Data System (ADS)

    Petrisor, T.; Boffa, V.; Celentano, G.; Ciontea, L.; Fabbri, F.; Galluzzi, V.; Gambardella, U.; Mancini, A.; Rufoloni, A.; Varesi, E.

    2002-08-01

    The epitaxial oxidation of the (0 0 1)[1 0 0] textured Ni 100- xV x tapes was studied because of the practical interest of NiO as a first buffer layer for the YBCO based coated conductors. The study revealed that the oxidation of the Ni-V alloy is rather complex, the less noble V being internally oxidized, while Ni undergoes an external oxidation. Moreover, the formation of the NiVO 3 and of Ni 7V 5O 17 compounds have negative effects on the epitaxial oxidation and on the surface morphology, as well. The role of vanadium on the epitaxial oxidation of Ni-V alloy has not been fully understood yet. The optimum conditions for the epitaxial oxidation have been found to be: 700epitaxial NiO films obtained under these conditions have a good out-of-plane and in-plane orientation, with a full-width-half-maximum of about 6.5° and 9.5°, respectively. The in-plane epitaxial relationship is [1 0 0]NiO∥[1 1 0]Ni-V. The as-obtained films have a compact and crack-free morphology, with grain sizes ranging from 30 to 300 nm. Nevertheless, the NiO films grown on (1 1 3) oriented grains or on twins are polycrystalline with a bright aspect, exhibiting a spongeous morphology. Epitaxial YBCO/CeO 2/NiO/Ni-V structures grown on the NiO template have a critical current density of about 0.6 MA/cm 2 at 77 K and zero magnetic field.

  13. Near Wall Turbulence: an experimental view

    NASA Astrophysics Data System (ADS)

    Stanislas, Michel

    2016-11-01

    The aim of this presentation is to summarize the understanding of the near wall turbulence phenomena obtained at Laboratoire de Mécanique de Lille using both hot wire anemometry and PIV. A wind tunnel was built in 1993 specifically designed for these two measurement techniques and aimed at large Reynolds numbers. Several experiments were performed since then in the frame of different PhDs and European projects, all aimed at evidencing turbulence organization in this region. These have fully benefited of the extraordinary development of PIV in that time frame, which has allowed entering visually and quantitatively inside the complex spatial and temporal structure of near wall turbulence. The presentation will try to emphasize the benefit of this approach in terms of understanding and modelling, illustrated by some representative results obtained. M. Stanislas particularly acknowledges the financial support of Region Nord Pas de Calais, unmissing during 25 years.

  14. Asymmetric shape transitions of epitaxial quantum dots

    NASA Astrophysics Data System (ADS)

    Wei, Chaozhen; Spencer, Brian J.

    2016-06-01

    We construct a two-dimensional continuum model to describe the energetics of shape transitions in fully faceted epitaxial quantum dots (strained islands) via minimization of elastic energy and surface energy at fixed volume. The elastic energy of the island is based on a third-order approximation, enabling us to consider shape transitions between pyramids, domes, multifaceted domes and asymmetric intermediate states. The energetics of the shape transitions are determined by numerically calculating the facet lengths that minimize the energy of a given island type of prescribed island volume. By comparing the energy of different island types with the same volume and analysing the energy surface as a function of the island shape parameters, we determine the bifurcation diagram of equilibrium solutions and their stability, as well as the lowest barrier transition pathway for the island shape as a function of increasing volume. The main result is that the shape transition from pyramid to dome to multifaceted dome occurs through sequential nucleation of facets and involves asymmetric metastable transition shapes. We also explicitly determine the effect of corner energy (facet edge energy) on shape transitions and interpret the results in terms of the relative stability of asymmetric island shapes as observed in experiment.

  15. Configurable hot spot fixing system

    NASA Astrophysics Data System (ADS)

    Kajiwara, Masanari; Kobayashi, Sachiko; Mashita, Hiromitsu; Aburada, Ryota; Furuta, Nozomu; Kotani, Toshiya

    2014-03-01

    Hot spot fixing (HSF) method has been used to fix many hot spots automatically. However, conventional HSF based on a biasing based modification is difficult to fix many hot spots under a low-k1 lithography condition. In this paper we proposed a new HSF, called configurable hotspot fixing system. The HSF has two major concepts. One is a new function to utilize vacant space around a hot spot by adding new patterns or extending line end edges around the hot spot. The other is to evaluate many candidates at a time generated by the new functions. We confirmed the proposed HSF improves 73% on the number of fixing hot spots and reduces total fixing time by 50% on a device layout equivalent to 28nm-node. The result shows the proposed HSF is effective for layouts under the low-k1 lithography condition.

  16. Radiations from hot nuclei

    NASA Technical Reports Server (NTRS)

    Malik, F. Bary

    1993-01-01

    The investigation indicates that nuclei with excitation energy of a few hundred MeV to BeV are more likely to radiate hot nuclear clusters than neutrons. These daughter clusters could, furthermore, de-excite emitting other hot nuclei, and the chain continues until these nuclei cool off sufficiently to evaporate primarily neutrons. A few GeV excited nuclei could radiate elementary particles preferentially over neutrons. Impact of space radiation with materials (for example, spacecraft) produces highly excited nuclei which cool down emitting electromagnetic and particle radiations. At a few MeV excitation energy, neutron emission becomes more dominant than gamma-ray emission and one often attributes the cooling to take place by successive neutron decay. However, a recent experiment studying the cooling process of 396 MeV excited Hg-190 casts some doubt on this thinking, and the purpose of this investigation is to explore the possibility of other types of nuclear emission which might out-compete with neutron evaporation.

  17. Hot, Dry and Cloudy

    NASA Technical Reports Server (NTRS)

    2007-01-01

    [figure removed for brevity, see original site] Click on the image for movie of Hot, Dry and Cloudy

    This artist's concept shows a cloudy Jupiter-like planet that orbits very close to its fiery hot star. NASA's Spitzer Space Telescope was recently used to capture spectra, or molecular fingerprints, of two 'hot Jupiter' worlds like the one depicted here. This is the first time a spectrum has ever been obtained for an exoplanet, or a planet beyond our solar system.

    The ground-breaking observations were made with Spitzer's spectrograph, which pries apart infrared light into its basic wavelengths, revealing the 'fingerprints' of molecules imprinted inside. Spitzer studied two planets, HD 209458b and HD 189733b, both of which were found, surprisingly, to have no water in the tops of their atmospheres. The results suggest that the hot planets are socked in with dry, high clouds, which are obscuring water that lies underneath. In addition, HD209458b showed hints of silicates, suggesting that the high clouds on that planet contain very fine sand-like particles.

    Capturing the spectra from the two hot-Jupiter planets was no easy feat. The planets cannot be distinguished from their stars and instead appear to telescopes as single blurs of light. One way to get around this is through what is known as the secondary eclipse technique. In this method, changes in the total light from a so-called transiting planet system are measured as a planet is eclipsed by its star, vanishing from our Earthly point of view. The dip in observed light can then be attributed to the planet alone.

    This technique, first used by Spitzer in 2005 to directly detect the light from an exoplanet, currently only works at infrared wavelengths, where the differences in brightness between the planet and star are less, and the planet's light is easier to pick out. For example, if the experiment had been done in visible light, the total light from the system would appear to be unchanged

  18. Growth of very large InN microcrystals by molecular beam epitaxy using epitaxial lateral overgrowth

    SciTech Connect

    Kamimura, J.; Kishino, K.; Kikuchi, A.

    2015-02-28

    Very thick InN (∼40 μm) was grown by molecular beam epitaxy using the epitaxial lateral overgrowth (ELO) technique. In some regions, the ELO of InN was observed as expected, indicating an important step toward fabricating quasi-bulk InN substrates. Interestingly, most parts of the sample consist of large flat-topped microcrystals and well-faceted microstructures. This is likely due to local growth condition variations during ELO, which is supported by an experiment where ELO of InN was performed on a substrate with various stripe mask patterns. TEM characterization of a flat top InN microcrystal revealed few stacking faults and only related threading dislocations. Defect-free small faceted microcrystals were also observed. The thick InN crystals show a narrow photoluminescence spectrum with a peak at 0.679 eV and linewidth of 16.8 meV at 4 K.

  19. A&M. TAN607 third floor plan for hot shop. Crane control ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. TAN-607 third floor plan for hot shop. Crane control rooms and their shielding windows. Plenum. Wall rack for manipulators in hot shop. Ralph M. Parsons 902-3-ANP-607-A 103. Date: December 1952. Approved by INEEL Classification Office for public release. INEEL index code no. 034-0607-00-693-106755 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  20. Domain wall filters

    SciTech Connect

    Baer, Oliver; Narayanan, Rajamani; Neuberger, Herbert; Witzel, Oliver

    2007-03-15

    We propose using the extra dimension separating the domain walls carrying lattice quarks of opposite handedness to gradually filter out the ultraviolet fluctuations of the gauge fields that are felt by the fermionic excitations living in the bulk. This generalization of the homogeneous domain wall construction has some theoretical features that seem nontrivial.

  1. Wall Finishes; Carpentry: 901895.

    ERIC Educational Resources Information Center

    Dade County Public Schools, Miami, FL.

    The course outline is designed to provide instruction in selecting, preparing, and installing wall finishing materials. Prerequisites for the course include mastery of building construction plans, foundations and walls, and basic mathematics. Intended for use in grades 11 and 12, the course contains five blocks of study totaling 135 hours of…

  2. Thin Wall Iron Castings

    SciTech Connect

    J.F. Cuttino; D.M. Stefanescu; T.S. Piwonka

    2001-10-31

    Results of an investigation made to develop methods of making iron castings having wall thicknesses as small as 2.5 mm in green sand molds are presented. It was found that thin wall ductile and compacted graphite iron castings can be made and have properties consistent with heavier castings. Green sand molding variables that affect casting dimensions were also identified.

  3. Interactive Word Walls

    ERIC Educational Resources Information Center

    Jackson, Julie; Narvaez, Rose

    2013-01-01

    It is common to see word walls displaying the vocabulary that students have learned in class. Word walls serve as visual scaffolds and are a classroom strategy used to reinforce reading and language arts instruction. Research shows a strong relationship between student word knowledge and academic achievement (Stahl and Fairbanks 1986). As a…

  4. 'Stucco' Walls-2

    NASA Technical Reports Server (NTRS)

    2004-01-01

    This image, taken by the microscopic imager, an instrument located on the Mars Exploration Rover Opportunity 's instrument deployment device, or 'arm,' shows the partial 'clodding' or cementation of the sand-sized grains within the trench wall. The area in this image measures approximately 3 centimeters (1.2 inches) across and makes up half of the projected 'Stucco Walls' image.

  5. Atomic layer epitaxy group IV materials: Surface processes, thin films, devices and their characterization

    NASA Astrophysics Data System (ADS)

    Davis, Robert F.; Bedair, Salah; El-Masry, Nadia; Glass, Jeffrey T.

    1993-06-01

    The maximum temperature at which self-terminating monolayers of Si can be formed on Si(100) from Si2H6 has been determined to be 570 deg C. As such, the chemical reactivity of C2H4 has been determined to be insufficient at this temperature, and acetylene has been selected as the successor C precursor due to its superior reactivity and chemisorption properties. A cryogenic purifier for removing acetone has been commissioned. Trenched Si(100) wafers are also being made to assess the ALE process for sidewall deposition uniformity and future bipolar devices. Nonstoichiometric, Si-rich SiC has been produced with an associated decrease in the band gap. An AES/XPS UHV analytical system and associated ALE deposition system has been commissioned and integrated into a much larger surface science system. These dual systems will allow a thorough study and characterization of both the initial nucleation of SiC and the overall ALE growth process of SiC. Tetramethylsilane and hexamethyldisilane have been deposited onto Si substrates in a hot filament CVD chamber to investigate their ability to promote ALE of diamond under DC biasing and a variety of system parameters. An electron gun and heating stage has been added to the growth chamber to enable AES and substrate heating. Good quality diamond films have been nucleated on deposited interlayers of both precursor compounds. The films have been examined by SEM and Raman spectroscopy. Good quality epitaxial films of CeO2 have been grown on Si(111) using laser ablation. Atomically clean substrates and slow growth rates were determined necessary for epitaxy.

  6. Applying CLIPS to control of molecular beam epitaxy processing

    NASA Technical Reports Server (NTRS)

    Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

    1990-01-01

    A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

  7. Nanoscale Origins of Ferroelastic Domain Wall Mobility in Ferroelectric Multilayers

    DOE PAGES

    Huang, Hsin-Hui; Hong, Zijian; Xin, Huolin L.; ...

    2016-10-31

    Here we investigate the nanoscale origins of ferroelastic domain wall motion in ferroelectric multilayer thin films that lead to giant electromechanical responses. We present direct evidence for complex underpinning factors that result in ferroelastic domain wall mobility using a combination of atomic-level aberration corrected scanning transmission electron microscopy and phase-field simulations in model epitaxial (001) tetragonal (T) PbZrxTi1-xO3 (PZT)/rhombohedral (R) PbZrxTi1-xO3 (PZT) bilayer heterostructures. The local electric dipole distribution is imaged on an atomic scale for a ferroelastic domain wall that nucleates in the R-layer and cuts through the composition breaking the T/R interface. Our studies reveal a highly complexmore » polarization rotation domain structure that is nearly on the knife-edge at the vicinity of this wall. Induced phases, namely tetragonal-like and rhombohedral-like monoclinic were observed close to the interface, and exotic domain arrangements, such as a half-four-fold closure structure, are observed. Phase field simulations show this is due to the minimization of the excessive elastic and electrostatic energies driven by the enormous strain gradient present at the location of the ferroelastic domain walls. Thus, in response to an applied stimulus, such as an electric field, any polarization reorientation must minimize the elastic and electrostatic discontinuities due to this strain gradient, which would induce a dramatic rearrangement of the domain structure. This insight into the origins of ferroelastic domain wall motion will allow researchers to better “craft” such multilayered ferroelectric systems with precisely tailored domain wall functionality and enhanced sensitivity, which can be exploited for the next generation of integrated piezoelectric technologies.« less

  8. Nanoscale Origins of Ferroelastic Domain Wall Mobility in Ferroelectric Multilayers

    SciTech Connect

    Huang, Hsin-Hui; Hong, Zijian; Xin, Huolin L.; Su, Dong; Chen, Long-Qing; Huang, Guanzhong; Munroe, Paul R.; Valanoor, Nagarajan

    2016-10-31

    Here we investigate the nanoscale origins of ferroelastic domain wall motion in ferroelectric multilayer thin films that lead to giant electromechanical responses. We present direct evidence for complex underpinning factors that result in ferroelastic domain wall mobility using a combination of atomic-level aberration corrected scanning transmission electron microscopy and phase-field simulations in model epitaxial (001) tetragonal (T) PbZrxTi1-xO3 (PZT)/rhombohedral (R) PbZrxTi1-xO3 (PZT) bilayer heterostructures. The local electric dipole distribution is imaged on an atomic scale for a ferroelastic domain wall that nucleates in the R-layer and cuts through the composition breaking the T/R interface. Our studies reveal a highly complex polarization rotation domain structure that is nearly on the knife-edge at the vicinity of this wall. Induced phases, namely tetragonal-like and rhombohedral-like monoclinic were observed close to the interface, and exotic domain arrangements, such as a half-four-fold closure structure, are observed. Phase field simulations show this is due to the minimization of the excessive elastic and electrostatic energies driven by the enormous strain gradient present at the location of the ferroelastic domain walls. Thus, in response to an applied stimulus, such as an electric field, any polarization reorientation must minimize the elastic and electrostatic discontinuities due to this strain gradient, which would induce a dramatic rearrangement of the domain structure. This insight into the origins of ferroelastic domain wall motion will allow researchers to better “craft” such multilayered ferroelectric systems with precisely tailored domain wall functionality and enhanced sensitivity, which can be exploited for the next generation of integrated piezoelectric technologies.

  9. Enabling Technologies for Ceramic Hot Section Components

    SciTech Connect

    Venkat Vedula; Tania Bhatia

    2009-04-30

    Silicon-based ceramics are attractive materials for use in gas turbine engine hot sections due to their high temperature mechanical and physical properties as well as lower density than metals. The advantages of utilizing ceramic hot section components include weight reduction, and improved efficiency as well as enhanced power output and lower emissions as a result of reducing or eliminating cooling. Potential gas turbine ceramic components for industrial, commercial and/or military high temperature turbine applications include combustor liners, vanes, rotors, and shrouds. These components require materials that can withstand high temperatures and pressures for long duration under steam-rich environments. For Navy applications, ceramic hot section components have the potential to increase the operation range. The amount of weight reduced by utilizing a lighter gas turbine can be used to increase fuel storage capacity while a more efficient gas turbine consumes less fuel. Both improvements enable a longer operation range for Navy ships and aircraft. Ceramic hot section components will also be beneficial to the Navy's Growth Joint Strike Fighter (JSF) and VAATE (Versatile Affordable Advanced Turbine Engines) initiatives in terms of reduced weight, cooling air savings, and capability/cost index (CCI). For DOE applications, ceramic hot section components provide an avenue to achieve low emissions while improving efficiency. Combustors made of ceramic material can withstand higher wall temperatures and require less cooling air. Ability of the ceramics to withstand high temperatures enables novel combustor designs that have reduced NO{sub x}, smoke and CO levels. In the turbine section, ceramic vanes and blades do not require sophisticated cooling schemes currently used for metal components. The saved cooling air could be used to further improve efficiency and power output. The objectives of this contract were to develop technologies critical for ceramic hot section

  10. Development of a testing procedure for a guarded hot box facility

    SciTech Connect

    Orlandi, R.D.; Howanski, J.W.; Derderian, G.D.; Shu, L.S.

    1983-01-01

    ASTM Test for Thermal Conductance and Transmittance of Built-Up Sections by Means of the Guarded Hot Box (C 236) states that the net heat flow through the metering box walls should be minimized. In order to satisfy this requirement, a testing procedure was developed to experimentally define the required thermopile emf set point across the metering box walls of the W.R. Grace and Company guarded hot box (GHB). This method of calibration can be applied to any GHB. Thermal conductances of three specimens were measured using the results of the calibration procedure and were found to be within 3% of the values obtained by other independent test methods.

  11. 22. SIDE WALL CONSTRUCTION, NORTH TRAINING WALL, LOOKING WEST FROM ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    22. SIDE WALL CONSTRUCTION, NORTH TRAINING WALL, LOOKING WEST FROM THE SAME POINT AS VIEW NO. 21. - Oakland Harbor Training Walls, Mouth of Federal Channel to Inner Harbor, Oakland, Alameda County, CA

  12. TRUEX hot demonstration

    SciTech Connect

    Chamberlain, D.B.; Leonard, R.A.; Hoh, J.C.; Gay, E.C.; Kalina, D.G.; Vandegrift, G.F.

    1990-04-01

    In FY 1987, a program was initiated to demonstrate technology for recovering transuranic (TRU) elements from defense wastes. This hot demonstration was to be carried out with solution from the dissolution of irradiated fuels. This recovery would be accomplished with both PUREX and TRUEX solvent extraction processes. Work planned for this program included preparation of a shielded-cell facility for the receipt and storage of spent fuel from commercial power reactors, dissolution of this fuel, operation of a PUREX process to produce specific feeds for the TRUEX process, operation of a TRUEX process to remove residual actinide elements from PUREX process raffinates, and processing and disposal of waste and product streams. This report documents the work completed in planning and starting up this program. It is meant to serve as a guide for anyone planning similar demonstrations of TRUEX or other solvent extraction processing in a shielded-cell facility.

  13. The Deep Hot Biosphere

    NASA Astrophysics Data System (ADS)

    Craig, Harmon

    The first inhabitants of planet Earth were single-celled microorganisms and they are still with us today. Their name is truly legion, for they live everywhere, from boiling hot springs at the Earth's surface and on the seafloor to the coldest waters of the oceans and the Antarctic lakes. They are the masters of evolutionary adaptation, who have colonized the entire range of conditions under which water can exist as a liquid. At some ancient mythic time billions of years ago in a witches' brew of precursory molecules, somewhere, somehow, on a sunny Precambrian day bright with promise some of these molecules came together in the first coupling, learned to replicate, create enzymes, metabolize, and seal themselves into protective membranes inside of which they began the process of living. How they did this is our greatest mystery, for they are our primordial ancestors and we do not understand ourselves until we understand them.

  14. Three measuring techniques for assessing the mean wall skin friction in wall-bounded flows

    NASA Astrophysics Data System (ADS)

    Zanoun, E.-S.; Jehring, L.; Egbers, C.

    2014-04-01

    The present paper aims at evaluating the mean wall skin friction data in laminar and turbulent boundary layer flows obtained from two optical and one thermal measuring techniques, namely, laser-Doppler anemometry (LDA), oil-film interferometry (OFI), and surface hot-film anemometry (SHFA), respectively. A comparison among the three techniques is presented, indicating close agreement in the mean wall skin friction data obtained, directly, from both the OFI and the LDA near-wall mean velocity profiles. On the other hand, the SHFA, markedly, over estimates the mean wall skin friction by 3.5-11.7% when compared with both the LDA and the OFI data, depending on the thermal conductivity of the substrate and glue material, probe calibration, probe contamination, temperature drift and Reynolds number. Satisfactory agreement, however, is observed among all three measuring techniques at higher Reynolds numbers, Re x >106, and within ±5% with empirical relations extracted from the literature. In addition, accurate velocity data within the inertial sublayer obtained using the LDA supports the applicability of the Clauser method to evaluate the wall skin friction when appropriate values for the constants of the logarithmic line are utilized.

  15. Micromagnetics and microstructure of epitaxially grown Co and Co-Cr films for perpendicular magnetic recording

    NASA Astrophysics Data System (ADS)

    Krishnan, K. M.; Takeuchi, T.; Hirayama, Y.; Donnet, D. M.; Honda, Y.; Futamoto, M.

    1994-07-01

    Highly c-axis oriented, single crystal films of Co(1-x)Cr(x) (0 less than or equal to x less than 0.3) have been grown epitaxially on mica substrates by e-beam evaporation. Films grown on Ru underlayers have an average grain size of 50-80 nm, negligibe fcc content, and very narrow c-axis dispersions. For Co films (x = 0), the as-grown magnetization structure are mainly 180 degree domain walls with a uniform distribution of cross-ties for thinner samples (less than or equal to 300 Angstrom), while thicker (greater than 400 Angstrom) ones show stripe domains. These images were analyzed in detail to measure the wall widths and associated energy densities for as-grown, remanent, and ac-magnetized samples. As expected, the magnetic properties of these films are composition dependent. However, for any Cr concentration, these films exhibit the largest saturation magnetization when compared with either sputtered or evaporated samples. This enhancement can be attributed to a nanometer-scale segregation of Cr, which in these samples could be particularly aided by the diffusion on the close-packed planes of the films with very narrow c-axis dispersions. Preliminary x-ray microanalysis and NMR data support this interpretation.

  16. Electric circuit model for strained-layer epitaxy

    NASA Astrophysics Data System (ADS)

    Kujofsa, Tedi; Ayers, John E.

    2016-11-01

    For the design and analysis of a strained-layer semiconductor device structure, the equilibrium strain profile may be determined numerically by energy minimization but this method is computationally intense and non-intuitive. Here we present an electric circuit model approach for the equilibrium analysis of an epitaxial stack, in which each sublayer may be represented by an analogous configuration involving a current source, a resistor, a voltage source, and an ideal diode. The resulting node voltages in the analogous electric circuit correspond to the equilibrium strains in the original epitaxial structure. This new approach enables analysis using widely accessible circuit simulators, and an intuitive understanding of electric circuits may be translated to the relaxation of strained-layer structures. In this paper, we describe the mathematical foundation of the electrical circuit model and demonstrate its application to epitaxial layers of Si1-x Ge x grown on a Si (001) substrate.

  17. Fluoride waveguide lasers grown by liquid phase epitaxy

    NASA Astrophysics Data System (ADS)

    Starecki, Florent; Bolaños, Western; Brasse, Gurvan; Benayad, Abdelmjid; Doualan, Jean-Louis; Braud, Alain; Moncorgé, Richard; Camy, Patrice

    2013-03-01

    High optical quality rare-earth-doped LiYF4 (YLF) epitaxial layers were grown on pure YLF substrates by liquid phase epitaxy (LPE). Thulium, praseodymium and ytterbium YLF crystalline waveguides co-doped with gadolinium and/or lutetium were obtained. Spectroscopic and optical characterization of these rare-earth doped waveguides are reported. Internal propagation losses as low as 0.11 dB/cm were measured on the Tm:YLF waveguide and the overall spectroscopic characteristics of the epitaxial layers were found to be comparable to bulk crystals. Laser operation was achieved at 1.87 μm in the Tm3+ doped YLF planar waveguide with a very good efficiency of 76% with respect to the pump power. Lasing was also demonstrated in a Pr3+ doped YLF waveguide in the red and orange regions and in a Yb3+:YLF planar waveguide at 1020 nm and 994 nm.

  18. Localized States Influence Spin Transport in Epitaxial Graphene

    NASA Astrophysics Data System (ADS)

    Maassen, T.; van den Berg, J. J.; Huisman, E. H.; Dijkstra, H.; Fromm, F.; Seyller, T.; van Wees, B. J.

    2013-02-01

    We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to Hanle spin precession measurements obtained on monolayer epitaxial graphene on SiC(0001). Combined with newly performed measurements on quasi-free-standing monolayer epitaxial graphene on SiC(0001) our analysis shows that the different values for the diffusion coefficient measured in charge and spin transport measurements on monolayer epitaxial graphene on SiC(0001) and the high values for the spin relaxation time can be explained by the influence of localized states arising from the buffer layer at the interface between the graphene and the SiC surface.

  19. Solid phase epitaxial regrowth of (001) anatase titanium dioxide

    SciTech Connect

    Barlaz, David Eitan; Seebauer, Edmund G.

    2016-03-15

    The growing interest in metal oxide based semiconductor technologies has driven the need to produce high quality epitaxial films of one metal oxide upon another. Largely unrecognized in synthetic efforts is that some metal oxides offer strongly polar surfaces and interfaces that require electrostatic stabilization to avoid a physically implausible divergence in the potential. The present work examines these issues for epitaxial growth of anatase TiO{sub 2} on strontium titanate (001). Solid phase epitaxial regrowth yields only the (001) facet, while direct crystalline growth by atomic layer deposition yields both the (112) and (001). The presence of amorphous TiO{sub 2} during regrowth may provide preferential stabilization for formation of the (001) facet.

  20. MIR wall surveyor

    SciTech Connect

    Lehman, S K

    1998-08-01

    This report addresses the problem of determining the layer thickness of a wall probed with a monostatic, hand-held implementation of Lawrence Livermore National Laboratory's Micropower Impulse Radar (MIR). Our goal is to locate the layers of the wall, and measure its overall thickness. The physical constraints require the device to be held fixed or swept rapidly over the wall. Thus an insufficient amount of backscattered data are collected to use diffraction tomographic [3] techniques to form images. The problem is therefore one of determining the wall layers from a set of time series reflection data. We develop two channel signal processing algorithms to determine the location of the layers of a wall, using as inputs the time series returned from the wall and the incident pulse. We study the problem using a finite difference time domain (FDTD) computer code to simulate the electromagnetic propagation within and scattering from a wall probed with five pulses. We use the results to develop and test signal processing procedures for locating the individual layers. We study two classes of algorithms: a deconvolution approach to determine a layered impulse response, and a correlation approach. After testing the algorithms on the FDTD results, we down-select to a suitable method.

  1. On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Alloing, B.; Vézian, S.; Tottereau, O.; Vennéguès, P.; Beraudo, E.; Zuniga-Pérez, J.

    2011-01-01

    The polarity of GaN micro- and nanowires grown epitaxially by metal organic vapor phase epitaxy on sapphire substrates and by molecular-beam epitaxy, using ammonia as a nitrogen source, on sapphire and silicon substrates has been investigated. On Al2O3(0001), whatever the growth technique employed, the GaN wires show a mixture of Ga and N polarities. On Si(111), the wires grown by ammonia-molecular beam epitaxy are almost entirely Ga-polar (around 90%) and do not show inversion domains. These results can be understood in terms of the growth conditions employed during the nucleation stage.

  2. On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

    SciTech Connect

    Alloing, B.; Vezian, S.; Tottereau, O.; Vennegues, P.; Beraudo, E.; Zuniga-Perez, J.

    2011-01-03

    The polarity of GaN micro- and nanowires grown epitaxially by metal organic vapor phase epitaxy on sapphire substrates and by molecular-beam epitaxy, using ammonia as a nitrogen source, on sapphire and silicon substrates has been investigated. On Al{sub 2}O{sub 3}(0001), whatever the growth technique employed, the GaN wires show a mixture of Ga and N polarities. On Si(111), the wires grown by ammonia-molecular beam epitaxy are almost entirely Ga-polar (around 90%) and do not show inversion domains. These results can be understood in terms of the growth conditions employed during the nucleation stage.

  3. A&M. Hot liquid waste treatment building (TAN616). Contextual view, facing ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. Hot liquid waste treatment building (TAN-616). Contextual view, facing south. Wall of hot shop (TAN-607) with high bay at left of view. Lower-roofed building at left edge of view is TAN- 633, hot cell annex. Complex at center of view is TAN-616. Tall metal building with gable roof is TAN-615. Photographer: Ron Paarmann. Date: September 22, 1997. INEEL negative no. HD-20-2-2 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  4. Hot hollow cathode gun assembly

    DOEpatents

    Zeren, J.D.

    1983-11-22

    A hot hollow cathode deposition gun assembly includes a hollow body having a cylindrical outer surface and an end plate for holding an adjustable heat sink, the hot hollow cathode gun, two magnets for steering the plasma from the gun into a crucible on the heat sink, and a shutter for selectively covering and uncovering the crucible.

  5. Infrared hot carrier diode mixer.

    PubMed

    Aukerman, L W; Erler, J W

    1977-11-01

    Detection of a 54.3-GHz beatnote at 10.6 microm has been observed with a hot carrier diode mixer. The diode consists of a "cat whisker" antenna, which forms an ohmic point contact to n-InAs. The mechanism of this room-temperature detector is described as the "thermoelectric effect" of hot carriers.

  6. HOT CELL BUILDING, TRA632, INTERIOR. WINDOWED ROOM IS OFFICE; NEXT ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    HOT CELL BUILDING, TRA-632, INTERIOR. WINDOWED ROOM IS OFFICE; NEXT DOOR WAS DARKROOM, AND THIRD DOOR LED TO ANOTHER OFFICE. ALL ARE ALONG NORTH WALL OF BUILDING (ETR EXTENSION OF 1958). CAMERA FACES NORTHEAST. PUMICE BLOCK WALLS. INL NEGATIVE NO. HD46-29-1. Mike Crane, Photographer, 2/2005 - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

  7. CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CP640) LOOKING NORTHWEST ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CP-640) LOOKING NORTHWEST SHOWING FORMING AND PLACEMENT OF REINFORCING STEEL FOR SOUTH WALLS OF CELLS 1, 3, 4 AND 5 AND WEST WALL FOR CELLS 1 AND 2; CONSTRUCTION 13 PERCENT COMPLETE. INL PHOTO NUMBER NRTS 59-6436. J. Anderson, Photographer, 12/18/1959 - Idaho National Engineering Laboratory, Idaho Chemical Processing Plant, Fuel Reprocessing Complex, Scoville, Butte County, ID

  8. Tunable interfacial properties of epitaxial graphene on metal substrates

    NASA Astrophysics Data System (ADS)

    Gao, Min; Pan, Yi; Zhang, Chendong; Hu, Hao; Yang, Rong; Lu, Hongliang; Cai, Jinming; Du, Shixuan; Liu, Feng; Gao, H.-J.

    2010-02-01

    We report on tuning interfacial properties of epitaxially-grown graphenes with different kinds of metal substrates based on scanning tunneling microscopy experiments and density functional theory calculations. Three kinds of metal substrates, Ni(111), Pt(111), and Ru(0001), show different interactions with the epitaxially grown graphene at the interfaces. The different interfacial interaction making graphene n-type and p-type doped, leads to the polarity change of the thermoelectric property of the graphene/metal systems. These findings may give further insights to the interfacial interactions in the graphene/metal systems and promote the use of graphene-based heterostructures in devices.

  9. Seed layer technique for high quality epitaxial manganite films

    PubMed Central

    Graziosi, P.; Gambardella, A.; Calbucci, M.; O’Shea, K.; MacLaren, D. A.; Bergenti, I.; Homonnay, N.; Schmidt, G.; Pullini, D.; Busquets-Mataix, D.; Dediu, V.

    2016-01-01

    We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived. PMID:27648371

  10. Process for growing epitaxial gallium nitride and composite wafers

    DOEpatents

    Weber, Eicke R.; Subramanya, Sudhir G.; Kim, Yihwan; Kruger, Joachim

    2003-05-13

    A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.

  11. Optical Probing of metamagnetic phases in epitaxial EuSe

    SciTech Connect

    Galgano, G. D.; Henriques, A. B.; Bauer, G.; Springholz, G.

    2011-12-23

    EuSe is a wide gap magnetic semiconductors with a potential for applications in proof-of-concept spintronic devices. When the temperature is lowered, EuSe goes through sharp transitions between a variety of magnetic phases and is thus described as metamagnetic. The purpose of the present investigation is to correlate the magnetic order to the sharp dichroic doublet, discovered recently in high quality thin epitaxial layers of EuSe, grown by molecular beam epitaxy. We report detailed measurements of the doublet positions and intensities as a function of magnetic field in low temperatures, covering several magnetic phases.

  12. Seed layer technique for high quality epitaxial manganite films.

    PubMed

    Graziosi, P; Gambardella, A; Calbucci, M; O'Shea, K; MacLaren, D A; Riminucci, A; Bergenti, I; Fugattini, S; Prezioso, M; Homonnay, N; Schmidt, G; Pullini, D; Busquets-Mataix, D; Dediu, V

    2016-08-01

    We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

  13. Seed layer technique for high quality epitaxial manganite films

    NASA Astrophysics Data System (ADS)

    Graziosi, P.; Gambardella, A.; Calbucci, M.; O'Shea, K.; MacLaren, D. A.; Riminucci, A.; Bergenti, I.; Fugattini, S.; Prezioso, M.; Homonnay, N.; Schmidt, G.; Pullini, D.; Busquets-Mataix, D.; Dediu, V.

    2016-08-01

    We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

  14. Concept of epitaxial silicon structures for edge illuminated solar cells

    NASA Astrophysics Data System (ADS)

    Sarnecki, J.; Gawlik, G.; Teodorczyk, M.; Jeremiasz, O.; Kozłowski, R.; Lipiński, D.; Krzyżak, K.; Brzozowski, A.

    2011-12-01

    A new concept of edge illuminated solar cells (EISC) based on silicon epitaxial technique has been proposed. In this kind of photovoltaic (PV) devices, sun-light illuminates directly a p-n junction through the edge of the structure which is perpendicular to junction surface. The main motivation of the presented work is preparation of a working model of an edge-illuminated silicon epitaxial solar cell sufficient to cooperation with a luminescent solar concentrator (LSC) consisted of a polymer foil doped with a luminescent material. The technological processes affecting the cell I-V characteristic and PV parameters are considered.

  15. Magnetic Nanostructures by Adaptive Twinning in Strained Epitaxial Films

    NASA Astrophysics Data System (ADS)

    Kauffmann-Weiss, Sandra; Gruner, Markus E.; Backen, Anja; Schultz, Ludwig; Entel, Peter; Fähler, Sebastian

    2011-11-01

    We exploit the intrinsic structural instability of the Fe70Pd30 magnetic shape memory alloy to obtain functional epitaxial films exhibiting a self-organized nanostructure. We demonstrate that coherent epitaxial straining by 54% is possible. The combination of thin film experiments and large-scale first-principles calculations enables us to establish a lattice relaxation mechanism, which is not expected for stable materials. We identify a low twin boundary energy compared to a high elastic energy as key prerequisite for the adaptive nanotwinning. Our approach is versatile as it allows to control both, nanostructure and intrinsic properties for ferromagnetic, ferroelastic, and ferroelectric materials.

  16. Nanocluster dynamics in fast rate epitaxy under mesoplasma condition

    NASA Astrophysics Data System (ADS)

    Chen, L. W.; Shibuta, Y.; Kambara, M.; Yoshida, T.

    2013-03-01

    The dynamics of Si nano-clusters during epitaxial growth has been investigated with molecular dynamics simulation using the Tersoff potential. Several nm sized Si cluster formed during rapid cooling was found to deform instantaneously upon impingement on a Si(1 0 0) substrate at the same time with the spontaneous ordering of the atomic structure to that of the substrate. Due to the increased fraction of high-energy atoms at the surface, smaller clusters (˜1 nm) are favorable for such a deformation even at lower temperatures. This is the advantage of loosely-bound cluster as growth precursor to attain epitaxy with reduced impact energies.

  17. Experimental Study of Ignition by Hot Spot in Internal Combustion Engines

    NASA Technical Reports Server (NTRS)

    Serruys, Max

    1938-01-01

    In order to carry out the contemplated study, it was first necessary to provide hot spots in the combustion chamber, which could be measured and whose temperature could be changed. It seemed difficult to realize both conditions working solely on the temperature of the cooling water in a way so as to produce hot spots on the cylinder wall capable of provoking autoignition. Moreover, in the majority of practical cases, autoignition is produced by the spark plug, one of the least cooled parts in the engine. The first procedure therefore did not resemble that which most generally occurs in actual engine operation. All of these considerations caused us to reproduce similar hot spots at the spark plugs. The hot spots produced were of two kinds and designated with the name of thermo-electric spark plug and of metallic hot spot.

  18. Hot Spot Cosmic Accelerators

    NASA Astrophysics Data System (ADS)

    2002-11-01

    length of more than 3 million light-years, or no less than one-and-a-half times the distance from the Milky Way to the Andromeda galaxy, this structure is indeed gigantic. The region where the jets collide with the intergalactic medium are known as " hot spots ". Superposing the intensity contours of the radio emission from the southern "hot spot" on a near-infrared J-band (wavelength 1.25 µm) VLT ISAAC image ("b") shows three distinct emitting areas; they are even better visible on the I-band (0.9 µm) FORS1 image ("c"). This emission is obviously associated with the shock front visible on the radio image. This is one of the first times it has been possible to obtain an optical/near-IR image of synchrotron emission from such an intergalactic shock and, thanks to the sensitivity and image sharpness of the VLT, the most detailed view of its kind so far . The central area (with the strongest emission) is where the plasma jet from the galaxy centre hits the intergalactic medium. The light from the two other "knots", some 10 - 15,000 light-years away from the central "hot spot", is also interpreted as synchrotron emission. However, in view of the large distance, the astronomers are convinced that it must be caused by electrons accelerated in secondary processes at those sites . The new images thus confirm that electrons are being continuously accelerated in these "knots" - hence called "cosmic accelerators" - far from the galaxy and the main jets, and in nearly empty space. The exact physical circumstances of this effect are not well known and will be the subject of further investigations. The present VLT-images of the "hot spots" near 3C 445 may not have the same public appeal as some of those beautiful images that have been produced by the same instruments during the past years. But they are not less valuable - their unusual importance is of a different kind, as they now herald the advent of fundamentally new insights into the mysteries of this class of remote and active

  19. Self-assembled magnetic nanostructures: Epitaxial nickel on titanium nitride (001) surface

    NASA Astrophysics Data System (ADS)

    Zhou, Honghui

    2005-11-01

    Systems that contain single domain magnetic particles have been receiving intensive attentions over recent years since they are possible candidates for applications in ultrahigh-density data storage and magnetoelectronic devices. The focus of this research is self-assembly growth of magnetic nickel nanostructures by domain matching epitaxy under Volmer-Weber (V-W) mode. The growth was conducted by pulsed laser deposition (PLD) technique using epitaxial titanium nitride film as the template, which was in turn grown on silicon (100) substrate. The structural characterization includes X-ray diffraction and both cross-sectional and plan-view transmission electron microscopy. The results showed that the nickel islands formed exhibit a self-assembled nature, i.e., a certain degree of uniformity in orientation, shape, and size. The orientation relationship observed is Ni {100} // TiN {100} // Si {100}, the so-called "cube-on-cube" relationship. The islands are faceted, forming truncated pyramids with walls of (111) planes and a flat top of (100) plane. The base of islands is rectangular with the two principal edges parallel to two orthogonal <011> directions. The size distribution is relatively narrow, comparable to that obtained from self-assembled islands grown under Stranski-Krastanov (S-K) mode. A certain degree of self-organization was also found in the island lateral distribution: island chains were observed along the directions close to <011>, which are also the edge directions. The island faceting could be explained by surface energy minimization. The interaction of the island edge induced strain field between neighboring islands is believed to be responsible for the size uniformity and the lateral ordering. Magnetic measurements were also conducted on these crystallographically aligned nickel islands using superconducting quantum interference device (SQUID) magnetometer, and the results were compared with that obtained from the ensemble of randomly oriented

  20. A study on the epitaxial Bi2Se3 thin film grown by vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Lin, Yen-Cheng; Chen, Yu-Sung; Lee, Chao-Chun; Wu, Jen-Kai; Lee, Hsin-Yen; Liang, Chi-Te; Chang, Yuan Huei

    2016-06-01

    We report the growth of high quality Bi2Se3 thin films on Al2O3 substrates by using chemical vapor deposition. From the atomic force microscope, x-ray diffraction and transmission electron microscope measurements we found that the films are of good crystalline quality, have two distinct domains and can be grown epitaxially on the Al2O3 substrate. Carrier concentration in the sample is found to be 1.1 × 1019 cm-3 between T = 2 K to T = 300 K, and electron mobility can reach 954 cm2/V s at T = 2 K. Weak anti-localization effect is observed in the low temperature magneto-transport measurement for the sample which indicates that the thin film has topological surface state.

  1. [Nursing care wall planning].

    PubMed

    Moreau, Véronique

    2013-01-01

    Nursing care wall planners are not a tool for assessing workload, but a means of providing coherence and individualised monitoring of care. Its application is focused not only on team organisation, but also on the patient's needs.

  2. Really Hot Stars

    NASA Astrophysics Data System (ADS)

    2003-04-01

    Spectacular VLT Photos Unveil Mysterious Nebulae Summary Quite a few of the most beautiful objects in the Universe are still shrouded in mystery. Even though most of the nebulae of gas and dust in our vicinity are now rather well understood, there are some which continue to puzzle astronomers. This is the case of a small number of unusual nebulae that appear to be the subject of strong heating - in astronomical terminology, they present an amazingly "high degree of excitation". This is because they contain significant amounts of ions, i.e., atoms that have lost one or more of their electrons. Depending on the atoms involved and the number of electrons lost, this process bears witness to the strength of the radiation or to the impact of energetic particles. But what are the sources of that excitation? Could it be energetic stars or perhaps some kind of exotic objects inside these nebulae? How do these peculiar objects fit into the current picture of universal evolution? New observations of a number of such unusual nebulae have recently been obtained with the Very Large Telescope (VLT) at the ESO Paranal Observatory (Chile). In a dedicated search for the origin of their individual characteristics, a team of astronomers - mostly from the Institute of Astrophysics & Geophysics in Liège (Belgium) [1] - have secured the first detailed, highly revealing images of four highly ionized nebulae in the Magellanic Clouds, two small satellite galaxies of our home galaxy, the Milky Way, only a few hundred thousand light-years away. In three nebulae, they succeeded in identifying the sources of energetic radiation and to eludicate their exceptional properties: some of the hottest, most massive stars ever seen, some of which are double. With masses of more than 20 times that of the Sun and surface temperatures above 90 000 degrees, these stars are truly extreme. PR Photo 09a/03: Nebula around the hot star AB7 in the SMC. PR Photo 09b/03: Nebula near the hot Wolf-Rayet star BAT99

  3. Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

    SciTech Connect

    Nepal, N.; Qadri, S. B.; Hite, J. K.; Mahadik, N. A.; Mastro, M. A.; Eddy, C. R. Jr.

    2013-08-19

    Thin AlN layers were grown at 200–650 °C by plasma assisted atomic layer epitaxy (PA-ALE) simultaneously on Si(111), sapphire (1120), and GaN/sapphire substrates. The AlN growth on Si(111) is self-limited for trimethyaluminum (TMA) pulse of length > 0.04 s, using a 10 s purge. However, the AlN nucleation on GaN/sapphire is non-uniform and has a bimodal island size distribution for TMA pulse of ≤0.03 s. The growth rate (GR) remains almost constant for T{sub g} between 300 and 400 °C indicating ALE mode at those temperatures. The GR is increased by 20% at T{sub g} = 500 °C. Spectroscopic ellipsometry (SE) measurement shows that the ALE AlN layers grown at T{sub g} ≤ 400 °C have no clear band edge related features, however, the theoretically estimated band gap of 6.2 eV was measured for AlN grown at T{sub g} ≥ 500 °C. X-ray diffraction measurements on 37 nm thick AlN films grown at optimized growth conditions (T{sub g} = 500 °C, 10 s purge, 0.06 s TMA pulse) reveal that the ALE AlN on GaN/sapphire is (0002) oriented with rocking curve full width at the half maximum (FWHM) of 670 arc sec. Epitaxial growth of crystalline AlN layers by PA-ALE at low temperatures broadens application of the material in the technologies that require large area conformal growth at low temperatures with thickness control at the atomic scale.

  4. Improved engine wall models for Large Eddy Simulation (LES)

    NASA Astrophysics Data System (ADS)

    Plengsaard, Chalearmpol

    Improved wall models for Large Eddy Simulation (LES) are presented in this research. The classical Werner-Wengle (WW) wall shear stress model is used along with near-wall sub-grid scale viscosity. A sub-grid scale turbulent kinetic energy is employed in a model for the eddy viscosity. To gain better heat flux results, a modified classical variable-density wall heat transfer model is also used. Because no experimental wall shear stress results are available in engines, the fully turbulent developed flow in a square duct is chosen to validate the new wall models. The model constants in the new wall models are set to 0.01 and 0.8, respectively and are kept constant throughout the investigation. The resulting time- and spatially-averaged velocity and temperature wall functions from the new wall models match well with the law-of-the-wall experimental data at Re = 50,000. In order to study the effect of hot air impinging walls, jet impingement on a flat plate is also tested with the new wall models. The jet Reynolds number is equal to 21,000 and a fixed jet-to-plate spacing of H/D = 2.0. As predicted by the new wall models, the time-averaged skin friction coefficient agrees well with experimental data, while the computed Nusselt number agrees fairly well when r/D > 2.0. Additionally, the model is validated using experimental data from a Caterpillar engine operated with conventional diesel combustion. Sixteen different operating engine conditions are simulated. The majority of the predicted heat flux results from each thermocouple location follow similar trends when compared with experimental data. The magnitude of peak heat fluxes as predicted by the new wall models is in the range of typical measured values in diesel combustion, while most heat flux results from previous LES wall models are over-predicted. The new wall models generate more accurate predictions and agree better with experimental data.

  5. In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy.

    PubMed

    Zuo, Zheng; Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zheng, Jian-Guo; Liu, Jianlin

    2015-10-07

    Van der Waals materials have received a great deal of attention for their exceptional layered structures and exotic properties, which can open up various device applications in nanoelectronics. However, in situ epitaxial growth of dissimilar van der Waals materials remains challenging. Here we demonstrate a solution for fabricating van der Waals heterostructures. Graphene/hexagonal boron nitride (h-BN) heterostructures were synthesized on cobalt substrates by using molecular beam epitaxy. Various characterizations were carried out to evaluate the heterostructures. Wafer-scale heterostructures consisting of single-layer/bilayer graphene and multilayer h-BN were achieved. The mismatch angle between graphene and h-BN is below 1°.

  6. Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Lu, Zhen-Yu; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-01

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {111}B substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {113}B faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  7. In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy

    PubMed Central

    Zuo, Zheng; Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zheng, Jian-Guo; Liu, Jianlin

    2015-01-01

    Van der Waals materials have received a great deal of attention for their exceptional layered structures and exotic properties, which can open up various device applications in nanoelectronics. However, in situ epitaxial growth of dissimilar van der Waals materials remains challenging. Here we demonstrate a solution for fabricating van der Waals heterostructures. Graphene/hexagonal boron nitride (h-BN) heterostructures were synthesized on cobalt substrates by using molecular beam epitaxy. Various characterizations were carried out to evaluate the heterostructures. Wafer-scale heterostructures consisting of single-layer/bilayer graphene and multilayer h-BN were achieved. The mismatch angle between graphene and h-BN is below 1°. PMID:26442629

  8. Conducting Wall Hall Thrusters

    NASA Technical Reports Server (NTRS)

    Goebel, Dan M.; Hofer, Richard R.; Mikellides, Ioannis G.; Katz, Ira; Polk, James E.; Dotson, Brandon

    2013-01-01

    A unique configuration of the magnetic field near the wall of Hall thrusters, called Magnetic Shielding, has recently demonstrated the ability to significantly reduce the erosion of the boron nitride (BN) walls and extend the life of Hall thrusters by orders of magnitude. The ability of magnetic shielding to minimize interactions between the plasma and the discharge chamber walls has for the first time enabled the replacement of insulating walls with conducting materials without loss in thruster performance. The boron nitride rings in the 6 kW H6 Hall thruster were replaced with graphite that self-biased to near the anode potential. The thruster efficiency remained over 60% (within two percent of the baseline BN configuration) with a small decrease in thrust and increase in Isp typical of magnetically shielded Hall thrusters. The graphite wall temperatures decreased significantly compared to both shielded and unshielded BN configurations, leading to the potential for higher power operation. Eliminating ceramic walls makes it simpler and less expensive to fabricate a thruster to survive launch loads, and the graphite discharge chamber radiates more efficiently which increases the power capability of the thruster compared to conventional Hall thruster designs.

  9. Complex oxide ferroelectrics: Electrostatic doping by domain walls

    SciTech Connect

    Maksymovych, Petro

    2015-06-19

    Electrically conducting interfaces can form, rather unexpectedly, by breaking the translational symmetry of electrically insulating complex oxides. For example, a nanometre-thick heteroepitaxial interface between electronically insulating LaAlO3 and SrTiO3 supports a 2D electron gas1 with high mobility of >1,000 cm2 V-1 s-1 (ref. 2). Such interfaces can exhibit magnetism, superconductivity and phase transitions that may form the functional basis of future electronic devices2. A peculiar conducting interface can be created within a polar ferroelectric oxide by breaking the translational symmetry of the ferroelectric order parameter and creating a so-called ferroelectric domain wall (Fig. 1a,b). If the direction of atomic displacements changes at the wall in such a way as to create a discontinuity in the polarization component normal to the wall (Fig. 1a), the domain wall becomes electrostatically charged. It may then attract compensating mobile charges of opposite sign produced by dopant ionization, photoexcitation or other effects, thereby locally, electrostatically doping the host ferroelectric film. In contrast to conductive interfaces between epitaxially grown oxides, domain walls can be reversibly created, positioned and shaped by electric fields, enabling reconfigurable circuitry within the same volume of the material. Now, writing in Nature Nanotechnology, Arnaud Crassous and colleagues at EPFL and University of Geneva demonstrate control and stability of charged conducting domain walls in ferroelectric thin films of BiFeO3 down to the nanoscale.

  10. Solutions for Hot Situations

    NASA Technical Reports Server (NTRS)

    2003-01-01

    From the company that brought the world an integral heating and cooling food service system after originally developing it for NASA's Apollo Program, comes yet another orbital offshoot: a product that can be as thin as paper and as strong as steel. Nextel Ceramic Textiles and Composites from 3M Company offer space-age protection and innovative solutions for hot situations, ranging from NASA to NASCAR. With superior thermal protection, Nextel fabrics, tape, and sleevings outperform other high temperature textiles such as aramids, carbon, glass, and quartz, permitting engineers and manufacturers to handle applications up to 2,500 F (1,371 C). The stiffness and strength of Nextel Continuous Ceramic Fibers make them a great match for improving the rigidity of aluminum in metal matrix composites. Moreover, the fibers demonstrate low shrinkage at operating temperatures, which allow for the manufacturing of a dimensionally stable product. These novel fibers also offer excellent chemical resistance, low thermal conductivity, thermal shock resistance, low porosity, and unique electrical properties.

  11. Saturn's Hot Spot

    NASA Technical Reports Server (NTRS)

    2005-01-01

    This is the sharpest image of Saturn's temperature emissions taken from the ground; it is a mosaic of 35 individual exposures made at the W.M. Keck I Observatory, Mauna Kea, Hawaii on Feb. 4, 2004.

    The images to create this mosaic were taken with infrared radiation. The mosaic was taken at a wavelength near 17.65 microns and is sensitive to temperatures in Saturn's upper troposphere. The prominent hot spot at the bottom of the image is right at Saturn's south pole. The warming of the southern hemisphere was expected, as Saturn was just past southern summer solstice, but the abrupt changes in temperature with latitude were not expected. The tropospheric temperature increases toward the pole abruptly near 70 degrees latitude from 88 to 89 Kelvin (-301 to -299 degrees Fahrenheit) and then to 91 Kelvin (-296 degrees Fahrenheit) right at the pole.

    Ring particles are not at a uniform temperature everywhere in their orbit around Saturn. The ring particles are orbiting clockwise in this image. Particles are coldest just after having cooled down in Saturn's shadow (lower left). As they orbit Saturn, the particles increase in temperature up to a maximum (lower right) just before passing behind Saturn again in shadow.

    A small section of the ring image is missing because of incomplete mosaic coverage during the observing sequence.

  12. Neptune's 'Hot' South Pole

    NASA Technical Reports Server (NTRS)

    2007-01-01

    These thermal images show a 'hot' south pole on the planet Neptune. These warmer temperatures provide an avenue for methane to escape out of the deep atmosphere.

    The images were obtained with the Very Large Telescope in Chile, using an imager/spectrometer for mid-infrared wavelengths on Sept. 1 and 2, 2006. The telescope is operated by the European Organization for Astronomical Research in the Southern Hemisphere (known as ESO).

    Scientists say Neptune's south pole is 'hotter' than anywhere else on the planet by about 10 degrees Celsius (50 degrees Fahrenheit). The average temperature on Neptune is about minus 200 degrees Celsius (minus 392 degrees Fahrenheit).

    The upper left image samples temperatures near the top of Neptune's troposphere (near 100 millibar pressure, which is one-tenth the Earth atmospheric pressure at sea level). The hottest temperatures are indicated at the lower part of the image, at Neptune's south pole (see the graphic at the upper right). The lower two images, taken 6.3 hours apart, sample temperatures at higher altitudes in Neptune's stratosphere. They do show generally warmer temperatures near, but not at, the south pole. They also show a distinct warm area which can be seen in the lower left image and rotated completely around the back of the planet and returned to the earth-facing hemisphere in the lower right image.

  13. Hot Hydrogen Test Facility

    SciTech Connect

    W. David Swank

    2007-02-01

    The core in a nuclear thermal rocket will operate at high temperatures and in hydrogen. One of the important parameters in evaluating the performance of a nuclear thermal rocket is specific impulse, ISp. This quantity is proportional to the square root of the propellant’s absolute temperature and inversely proportional to square root of its molecular weight. Therefore, high temperature hydrogen is a favored propellant of nuclear thermal rocket designers. Previous work has shown that one of the life-limiting phenomena for thermal rocket nuclear cores is mass loss of fuel to flowing hydrogen at high temperatures. The hot hydrogen test facility located at the Idaho National Lab (INL) is designed to test suitability of different core materials in 2500°C hydrogen flowing at 1500 liters per minute. The facility is intended to test non-uranium containing materials and therefore is particularly suited for testing potential cladding and coating materials. In this first installment the facility is described. Automated Data acquisition, flow and temperature control, vessel compatibility with various core geometries and overall capabilities are discussed.

  14. Hot Hydrogen Test Facility

    SciTech Connect

    Swank, W. David; Carmack, Jon; Werner, James E.; Pink, Robert J.; Haggard, DeLon C.; Johnson, Ryan

    2007-01-30

    The core in a nuclear thermal rocket will operate at high temperatures and in hydrogen. One of the important parameters in evaluating the performance of a nuclear thermal rocket is specific impulse, ISP. This quantity is proportional to the square root of the propellant's absolute temperature and inversely proportional to square root of its molecular weight. Therefore, high temperature hydrogen is a favored propellant of nuclear thermal rocket designers. Previous work has shown that one of the life-limiting phenomena for thermal rocket nuclear cores is mass loss of fuel to flowing hydrogen at high temperatures. The hot hydrogen test facility located at the Idaho National Lab (INL) is designed to test suitability of different core materials in 2500 deg. C hydrogen flowing at 1500 liters per minute. The facility is intended to test low activity uranium containing materials but is also suited for testing cladding and coating materials. In this first installment the facility is described. Automated data acquisition, flow and temperature control, vessel compatibility with various core geometries and overall capabilities are discussed.

  15. Heteroepitaxial Growth of Single-Walled Carbon Nanotubes from Boron Nitride

    PubMed Central

    Tang, Dai-Ming; Zhang, Li-Li; Liu, Chang; Yin, Li-Chang; Hou, Peng-Xiang; Jiang, Hua; Zhu, Zhen; Li, Feng; Liu, Bilu; Kauppinen, Esko I.; Cheng, Hui-Ming

    2012-01-01

    The growth of single-walled carbon nanotubes (SWCNTs) with predefined structure is of great importance for both fundamental research and their practical applications. Traditionally, SWCNTs are grown from a metal catalyst with a vapor-liquid-solid mechanism, where the catalyst is in liquid state with fluctuating structures, and it is intrinsically unfavorable for the structure control of SWCNTs. Here we report the heteroepitaxial growth of SWCNTs from a platelet boron nitride nanofiber (BNNF), which is composed of stacked (002) planes and is stable at high temperatures. SWCNTs are found to grow epitaxially from the open (002) edges of the BNNFs, and the diameters of the SWCNTs are multiples of the BN (002) interplanar distance. In situ transmission electron microscopy observations coupled with first principles calculations reveal that the growth of SWCNTs from the BNNFs follows a vapor-solid-solid mechanism. Our work opens opportunities for the control over the structure of SWCNTs by hetero-crystallographic epitaxy. PMID:23240076

  16. Epitaxial silicide formation on recoil-implanted substrates

    SciTech Connect

    Hashimoto, Shin; Egashira, Kyoko; Tanaka, Tomoya; Etoh, Ryuji; Hata, Yoshifumi; Tung, R. T.

    2005-01-15

    An epitaxy-on-recoil-implanted-substrate (ERIS) technique is presented. A disordered surface layer, generated by forward recoil implantation of {approx}0.7-3x10{sup 15} cm{sup -2} of oxygen during Ar plasma etching of surface oxide, is shown to facilitate the subsequent epitaxial growth of {approx}25-35-nm-thick CoSi{sub 2} layers on Si(100). The dependence of the epitaxial fraction of the silicide on the recoil-implantation parameters is studied in detail. A reduction in the silicide reaction rate due to recoil-implanted oxygen is shown to be responsible for the observed epitaxial formation, similar to mechanisms previously observed for interlayer-mediated growth techniques. Oxygen is found to remain inside the fully reacted CoSi{sub 2} layer, likely in the form of oxide precipitates. The presence of these oxide precipitates, with only a minor effect on the sheet resistance of the silicide layer, has a surprisingly beneficial effect on the thermal stability of the silicide layers. The agglomeration of ERIS-grown silicide layers on polycrystalline Si is significantly suppressed, likely from a reduced diffusivity due to oxygen in the grain boundaries. The implications of the present technique for the processing of deep submicron devices are discussed.

  17. Depositing spacing layers on magnetic film with liquid phase epitaxy

    NASA Technical Reports Server (NTRS)

    Moody, J. W.; Shaw, R. W.; Sanfort, R. M.

    1975-01-01

    Liquid phase epitaxy spacing layer is compatible with systems which are hard-bubble proofed by use of second magnetic garnet film as capping layer. Composite is superior in that: circuit fabrication time is reduced; adherence is superior; visibility is better; and, good match of thermal expansion coefficients is provided.

  18. Multi Bandgap Photodetectors with Buried Epitaxial Metallic Contacts

    DTIC Science & Technology

    2014-01-09

    of bulk diffusion or bulk segregation. These highly tuneable nanocomposites show promise for direct integration into epitaxial semiconductor device...0119 Surface Mediated Tunable Self-Assembly of Single Crystal Semimetallic Rare- earth-group-V/III-V Semiconductor Nanocomposite Structures C.J... nanostructures embedded within a semiconducting matrix are of great interest for applications in plasmonics, photonic crystals, and nanoscale ohmic contacts

  19. Disordered Fermi liquid in epitaxial graphene from quantum transport measurements.

    PubMed

    Lara-Avila, Samuel; Tzalenchuk, Alexander; Kubatkin, Sergey; Yakimova, Rositza; Janssen, T J B M; Cedergren, Karin; Bergsten, Tobias; Fal'ko, Vladimir

    2011-10-14

    We have performed magnetotransport measurements on monolayer epitaxial graphene and analyzed them in the framework of the disordered Fermi liquid theory. We have separated the electron-electron and weak-localization contributions to resistivity and demonstrated the phase coherence over a micrometer length scale, setting the limit of at least 50 ps on the spin relaxation time in this material.

  20. Thermodynamic and Kinetic Aspects of III/V Epitaxy

    DTIC Science & Technology

    1992-05-22

    a applications electroniques et optiques University of Utah Dept. of Materials Science & Engineering Salt Lake City, UT 84112 May 22, 1992... microscopic strain energy. The kinetic aspects of epitaxy are by far the most complex and, consequently, the least understood. We are beginning to understand

  1. Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics

    SciTech Connect

    Egorov, A. Yu. Brunkov, P. N.; Nikitina, E. V.; Pirogov, E. V.; Sobolev, M. S.; Lazarenko, A. A.; Baidakova, M. V.; Kirilenko, D. A.; Konnikov, S. G.

    2014-12-15

    Advances in the production technology of multiperiod nanoheterostructures of quantum-cascade lasers with 60 cascades by molecular-beam epitaxy (MBE) on an industrial multiple-substrate MBE machine are discussed. The results obtained in studying the nanoheterostructures of quantum-cascade lasers by transmission electron microscopy, high-resolution X-ray diffraction analysis, and photoluminescence mapping are presented.

  2. High Reynolds number rough-wall turbulent boundary layers

    NASA Astrophysics Data System (ADS)

    Squire, Dougal; Morrill-Winter, Caleb; Schultz, Michael; Hutchins, Nicholas; Klewicki, Joseph; Marusic, Ivan

    2015-11-01

    In his review of turbulent flows over rough-walls, Jimenez (2004) concludes that there are gaps in the current database of relevant experiments. The author calls for measurements in which δ / k and k+ are both large--low blockage, fully-rough flow--and where δ / k is large and k+ is small--low blockage, transitionally-rough flow--to help clarify ongoing questions regarding the physics of rough-wall-bounded flows. The present contribution details results from a large set of measurements carried out above sandpaper in the Melbourne Wind Tunnel. The campaign spans 45 rough-wall measurements using single and multiple-wire hot-wire anemometry sensors and particle image velocimetry. A floating element drag balance is employed to obtain the rough-wall skin friction force. The data span 20 wall data are also obtained across a similar Reynolds number range to enable comparison of smooth- and rough-wall structural features. Generally, the data indicate similarity in the outer-layer of smooth- and fully-rough wall-bounded flows.

  3. Hot melt adhesive attachment pad

    NASA Technical Reports Server (NTRS)

    Fox, R. L.; Frizzill, A. W.; Little, B. D.; Progar, D. J.; Coultrip, R. H.; Couch, R. H.; Gleason, J. R.; Stein, B. A.; Buckley, J. D.; St.clair, T. L. (Inventor)

    1984-01-01

    A hot melt adhesive attachment pad for releasably securing distinct elements together is described which is particularly useful in the construction industry or a spatial vacuum environment. The attachment pad consists primarily of a cloth selectively impregnated with a charge of hot melt adhesive, a thermo-foil heater, and a thermo-cooler. These components are securely mounted in a mounting assembly. In operation, the operator activates the heating cycle transforming the hot melt adhesive to a substantially liquid state, positions the pad against the attachment surface, and activates the cooling cycle solidifying the adhesive and forming a strong, releasable bond.

  4. Hot Electron Emission in Semiconductors.

    DTIC Science & Technology

    2014-09-26

    Second Interim Report Hot Electron Emission in Semiconductors Jan. 85 - June 85 6. PERFORMING ORG. REPORT NUMBER 7. AUTHOR(s) 6. CONTRACT OR GRANT NUMBER(a...KEY WORDS (Continue on reverse side Jf necessary and identify by block number) " -novel tunable FIR sources) • hot electron emission in GaAs/GaAlAs...heterostructures)" -,/ " streaming of hot carriers in crossed electric and magnetic fields ABST’AACr C-rrhmus- m .wr. efe it rewo-- .rv d identify by

  5. Epitaxial metal-gallium arsenide contacts via electrodeposition

    NASA Astrophysics Data System (ADS)

    Bao, Zhi Liang

    The fabrication of epitaxial metal-GaAs contacts via electrodeposition and the electrical properties of the Schottky diodes are reported in this dissertation. Epitaxial electrodeposition of copper, iron, cobalt, iron-nickel, and bismuth on GaAs was discovered to rely on three major factors: the preparation of the GaAs surface by (NH4)OH etching, the addition of (NH 4)2SO4 to the electrolytes, and the control of deposition current density. The surface preparation by (NH4)OH provides a hydrophilic surface likely due to passivation via a layer of hydroxide bonds. Ammonium sulphate inhibits oxidation of the metal cations and likely acts as a surfactant both on the metal and GaAs surfaces. Control of adatom flux, similar to vacuum deposition techniques such as molecular beam epitaxy, determined the crystallinity, varying from polycrystalline to epitaxial to dendritic for current densities from 0.01 to 1 mA/mm2. The effects of other electrodeposition conditions including pH and electrolyte temperature were also investigated. Neutral electrolytes are needed for copper, iron, nickel-iron alloy, and cobalt epitaxial deposition, while acidic solution works for bismuth deposition indicating that the control of hydrogen evolution may be important. Cobalt nanodisc formation was obtained for lower temperatures (2 - 22°C) while optimal copper, iron, and bismuth epitaxy required higher deposition temperatures, 53, 56, and 70°C, respectively. The growth is via island nucleation and coalescence. The iron films develop a small decrease in lattice constant with residual compressive stress, which is a function of temperature. This is likely due to an impurity such as oxygen. Copper and cobalt formed nanometer scale reacted interfaces with GaAs, while iron and bismuth/GaAs formed abrupt interfaces. The electrical properties of these Schottky diodes were, nevertheless, found to be close to ideal and comparable to vacuum deposited diodes. Fe and Co/GaAs diodes showed identical

  6. Effects of honeycomb shaped walls on the flow regime between a rotating disk and a stationary wall

    NASA Astrophysics Data System (ADS)

    Uzkan, T.; Lipstein, N. J.

    1986-06-01

    In order to cool a gas turbine disk with a limited supply of coolant air, the radial inflow of hot gases between rotor disk and housing must be reduced. Attention is presently given to the use of different surface shapes on the stationary housing to inhibit disk pumping capacity and hence to reduce the radial influx of hot gases into the clearance. The basic geometry that was experimentally investigated was the flow field between a smooth cylindrical rotating disk parallel to a plain circular coaxial wall open to the free space at the disk periphery. The results obtained are presented in terms of the tangential and radial velocity profiles in the gap, the static pressure measurements, and the disk torque coefficients. A honeycombed stationary wall surface had a profound effect on the ingestion of external flow into the gap from the disk periphery.

  7. SiGe channel deposition by batch epitaxy

    NASA Astrophysics Data System (ADS)

    Reichel, Carsten; Schoenekess, Joerg; Dietel, Andreas; Wasyluk, Joanna; Chow, Yew Tuck; Kammler, Thorsten

    2015-08-01

    Batch epitaxy has been introduced for high volume manufacturing of SiGe channels in order to reduce the cost for this epitaxial process by a factor of 3. Beside cost, SiGe channel deposition by batch epitaxy offers many benefits for manufacturing. The stability of the process and the reduced variability of the SiGe thickness greatly improve the variation of VT. The batch epitaxy process does not show a pattern loading effect for SiGe thickness reducing the complexity for manufacturing significantly. However, since the tool concept is very different to that of the widely used single wafer tools, there are some tool specific issues that need to be managed. The wafer backside is critical for batch epitaxy. A nitride backside facing the front side of the wafer results in a clear degradation of the uniformity and a change of the morphology of the SiGe channel compared to that facing a Si backside. The thermal rounding is more pronounced for the channels deposited in a batch tool for both large and narrow width devices. The device parameters of the large width device are not affected by thermal rounding but the performance of the narrow width device is clearly degraded. The thin SiGe layer at the edge of the channel driven by thermal rounding affects the VT and thus the effective device width. An in-situ etching before SiGe deposition to avoid thermal rounding was not feasible due to defects issues which were induced by the wafer backside. Finally a thermal rounding of the Si by an aggressive H2 bake before SiGe deposition improves the SiGe channel uniformity and recovers the performance degradation of the narrow width device partly.

  8. On the density of states of disordered epitaxial graphene

    SciTech Connect

    Davydov, S. Yu.

    2015-05-15

    The study is concerned with two types of disordered epitaxial graphene: (i) graphene with randomly located carbon vacancies and (ii) structurally amorphous graphene. The former type is considered in the coherent potential approximation, and for the latter type, a model of the density of states is proposed. The effects of two types of substrates, specifically, metal and semiconductor substrates are taken into account. The specific features of the density of states of epitaxial graphene at the Dirac point and the edges of the continuous spectrum are analyzed. It is shown that vacancies in epitaxial graphene formed on the metal substrate bring about logarithmic nulling of the density of states of graphene at the Dirac point and the edges of the continuous spectrum. If the Dirac point corresponds to the middle of the band gap of the semiconductor substrate, the linear trend of the density of states to zero in the vicinity of the Dirac point in defect-free graphene transforms into a logarithmic decrease in the presence of vacancies. In both cases, the graphene-substrate interaction is assumed to be weak (quasi-free graphene). In the study of amorphous epitaxial graphene, a simple model of free amorphous graphene is proposed as the initial model, in which account is taken of the nonzero density of states at the Dirac point, and then the interaction of the graphene sheet with the substrate is taken into consideration. It is shown that, near the Dirac point, the quadratic behavior of the density of states of free amorphous graphene transforms into a linear dependence for amorphous epitaxial graphene. In the study, the density of states of free graphene corresponds to the low-energy approximation of the electron spectrum.

  9. Red-Hot Saturn

    NASA Technical Reports Server (NTRS)

    2005-01-01

    These side-by-side false-color images show Saturn's heat emission. The data were taken on Feb. 4, 2004, from the W. M. Keck I Observatory, Mauna Kea, Hawaii. Both images were taken with infrared radiation. The image on the left was taken at a wavelength near 17.65 microns and is sensitive to temperatures in Saturn's upper troposphere. The image on the right was taken at a wavelength of 8 microns and is sensitive to temperatures in Saturn's stratosphere. The prominent hot spot at the bottom of each image is at Saturn's south pole. The warming of the southern hemisphere was expected, as Saturn was just past southern summer solstice, but the abrupt changes in temperature with latitude were not expected.

    The troposphere temperature increases toward the pole abruptly near 70 degrees latitude from 88 to 89 Kelvin (-301 to -299 degrees Fahrenheit) and then to 91 Kelvin (-296 degrees Fahrenheit) right at the pole. Near 70 degrees latitude, the stratospheric temperature increases even more abruptly from 146 to 150 Kelvin (-197 to -189 degrees Fahrenheit) and then again to 151 Kelvin (-188 degrees Fahrenheit) right at the pole.

    While the rings are too faint to be detected at 8 microns (right), they show up at 17.65 microns. The ring particles are orbiting Saturn to the left on the bottom and to the right on the top. The lower left ring is colder than the lower right ring, because the particles are just moving out of Saturn's shadow where they have cooled off. As they orbit Saturn, they warm up to a maximum just before passing behind Saturn again in shadow.

  10. Ultimate Cost of Building Walls.

    ERIC Educational Resources Information Center

    Grimm, Clayford T.; Gross, James G.

    The need for economic analysis of building walls is discussed, and the factors influencing the ultimate cost of exterior walls are studied. The present worth method is used to analyze three types of exterior non-loadbearing panel or curtain walls. Anticipated costs are expressed in terms of their present value per square foot of wall area. The…

  11. A&M. Hot liquid waste treatment building (TAN616). Camera facing northeast. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. Hot liquid waste treatment building (TAN-616). Camera facing northeast. South wall with oblique views of west sides of structure. Photographer: Ron Paarmann. Date: September 22, 1997. INEEL negative no. HD-20-1-2 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  12. A&M. Hot cell annex (TAN633) contextual view also showing east ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. Hot cell annex (TAN-633) contextual view also showing east facade. Camera facing west. Note corridor connecting annex to pool area of TAN-607. Pumice block walls. Date: March 2004. INEEL negative no. HD-39-2-2 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  13. CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CPP640) LOOKING NORTHWEST, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CPP-640) LOOKING NORTHWEST, SHOWING FORMING FOR NORTH WALLS OF CELLS 1, 4 AND 5; CONSTRUCTION 21 PERCENT COMPLETE. INL PHOTO NUMBER NRTS-60-1874. Holmes, Photographer, 4/21/1960 - Idaho National Engineering Laboratory, Idaho Chemical Processing Plant, Fuel Reprocessing Complex, Scoville, Butte County, ID

  14. A&M. Hot liquid waste treatment building (TAN616), south side. Camera ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. Hot liquid waste treatment building (TAN-616), south side. Camera facing north. Personnel door at left side of wall. Partial view of outdoor stairway to upper level platform. Note concrete construction. Photographer: Ron Paarmann. Date: September 22, 1997. INEEL negative no. HD-20-1-3 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  15. A&M. TAN607. Special service cubicle (hot cell). Details include Zpipe ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. TAN-607. Special service cubicle (hot cell). Details include Z-pipe and stepped plug penetrations through shielding wall. Ralph M. Parsons 902-3-ANP-607-A116. Date: December 1952. Approved by INEEL Classification Office for public release. INEEL index code no. 034-0607-693-106767 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  16. CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CPP640) LOOKING NORTHEAST ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    CONSTRUCTION PROGRESS PHOTO OF HOT PILOT PLANT (CPP-640) LOOKING NORTHEAST SHOWING OVERALL BLOCK EXTERIOR WALLS; CONSTRUCTION 65 PERCENT COMPLETE. INL PHOTO NUMBER NRTS-60-4976. Holmes, Photographer, 9/26/1960 - Idaho National Engineering Laboratory, Idaho Chemical Processing Plant, Fuel Reprocessing Complex, Scoville, Butte County, ID

  17. Morpheus Lander Hot Fire Test

    NASA Video Gallery

    This video shows a successful "hot fire" test of the Morpheus lander on February 27, 2012, at the VTB Flight Complex at NASA's Johnson Space Center. The engine burns for an extended period of time ...

  18. Do scientists trace hot topics?

    NASA Astrophysics Data System (ADS)

    Wei, Tian; Li, Menghui; Wu, Chensheng; Yan, Xiao-Yong; Fan, Ying; di, Zengru; Wu, Jinshan

    2013-07-01

    Do scientists follow hot topics in their scientific investigations? In this paper, by performing analysis to papers published in the American Physical Society (APS) Physical Review journals, it is found that papers are more likely to be attracted by hot fields, where the hotness of a field is measured by the number of papers belonging to the field. This indicates that scientists generally do follow hot topics. However, there are qualitative differences among scientists from various countries, among research works regarding different number of authors, different number of affiliations and different number of references. These observations could be valuable for policy makers when deciding research funding and also for individual researchers when searching for scientific projects.

  19. Do scientists trace hot topics?

    PubMed Central

    Wei, Tian; Li, Menghui; Wu, Chensheng; Yan, Xiao-Yong; Fan, Ying; Di, Zengru; Wu, Jinshan

    2013-01-01

    Do scientists follow hot topics in their scientific investigations? In this paper, by performing analysis to papers published in the American Physical Society (APS) Physical Review journals, it is found that papers are more likely to be attracted by hot fields, where the hotness of a field is measured by the number of papers belonging to the field. This indicates that scientists generally do follow hot topics. However, there are qualitative differences among scientists from various countries, among research works regarding different number of authors, different number of affiliations and different number of references. These observations could be valuable for policy makers when deciding research funding and also for individual researchers when searching for scientific projects. PMID:23856680

  20. Small Friends of Hot Jupiters

    NASA Astrophysics Data System (ADS)

    Nunez, Luis Ernesto; Johnson, John A.

    2017-01-01

    Hot Jupiters are Jupiter-sized gas giant exoplanets that closely orbit their host star in periods of about 10 days or less. Early models hypothesized that these exoplanets formed away from the star, then over time drifted to their characteristically closer locations. However, new theories predict that Hot Jupiters form at their close proximity during the process of core accretion (Batygin et al. 2015). In fact, a super-Earth and a Neptune-sized exoplanet have already been detected in the Hot Jupiter-hosting star WASP-47 (Becker et al. 2015). We will present our analysis of radial velocity time series plots to determine whether low-mass, short-period planets have been previously overlooked in systems of stars which host Hot Jupiters.The SAO REU program is funded in part by the National Science Foundation REU and Department of Defense ASSURE programs under NSF Grant no. 1262851.

  1. Swift thermal steering of domain walls in ferromagnetic MnBi stripes

    PubMed Central

    Sukhov, Alexander; Chotorlishvili, Levan; Ernst, Arthur; Zubizarreta, Xabier; Ostanin, Sergey; Mertig, Ingrid; Gross, Eberhard K. U.; Berakdar, Jamal

    2016-01-01

    We predict a fast domain wall (DW) motion induced by a thermal gradient across a nanoscopic ferromagnetic stripe of MnBi. The driving mechanism is an exchange torque fueled by magnon accumulation at the DWs. Depending on the thickness of the sample, both hot-to-cold and cold-to-hot DW motion directions are possible. The finding unveils an energy efficient way to manipulate DWs as an essential element in magnetic information processing such as racetrack memory. PMID:27076097

  2. Swift thermal steering of domain walls in ferromagnetic MnBi stripes

    NASA Astrophysics Data System (ADS)

    Sukhov, Alexander; Chotorlishvili, Levan; Ernst, Arthur; Zubizarreta, Xabier; Ostanin, Sergey; Mertig, Ingrid; Gross, Eberhard K. U.; Berakdar, Jamal

    2016-04-01

    We predict a fast domain wall (DW) motion induced by a thermal gradient across a nanoscopic ferromagnetic stripe of MnBi. The driving mechanism is an exchange torque fueled by magnon accumulation at the DWs. Depending on the thickness of the sample, both hot-to-cold and cold-to-hot DW motion directions are possible. The finding unveils an energy efficient way to manipulate DWs as an essential element in magnetic information processing such as racetrack memory.

  3. Swift thermal steering of domain walls in ferromagnetic MnBi stripes.

    PubMed

    Sukhov, Alexander; Chotorlishvili, Levan; Ernst, Arthur; Zubizarreta, Xabier; Ostanin, Sergey; Mertig, Ingrid; Gross, Eberhard K U; Berakdar, Jamal

    2016-04-14

    We predict a fast domain wall (DW) motion induced by a thermal gradient across a nanoscopic ferromagnetic stripe of MnBi. The driving mechanism is an exchange torque fueled by magnon accumulation at the DWs. Depending on the thickness of the sample, both hot-to-cold and cold-to-hot DW motion directions are possible. The finding unveils an energy efficient way to manipulate DWs as an essential element in magnetic information processing such as racetrack memory.

  4. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

    SciTech Connect

    Yu, Yifei; Hu, Shi; Su, Liqin; Huang, Lujun; Liu, Yi; Jin, Zhenghe; Puretzky, Alexander A.; Geohegan, David B.; Kim, Ki Wook; Zhang, Yong; Cao, Linyou

    2014-12-03

    Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of the two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.

  5. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

    DOE PAGES

    Yu, Yifei; Hu, Shi; Su, Liqin; ...

    2014-12-03

    Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of themore » two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.« less

  6. Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

    DOEpatents

    Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

    2013-02-19

    There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

  7. Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

    DOEpatents

    Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

    2015-01-06

    There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

  8. Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha

    DOEpatents

    Lim, Chong Wee; Shin, Chan Soo; Gall, Daniel; Petrov, Ivan Georgiev; Greene, Joseph E.

    2004-09-28

    A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.

  9. Novel chiral magnetic domain wall structure in Fe/Ni/Cu(001) films.

    PubMed

    Chen, G; Zhu, J; Quesada, A; Li, J; N'Diaye, A T; Huo, Y; Ma, T P; Chen, Y; Kwon, H Y; Won, C; Qiu, Z Q; Schmid, A K; Wu, Y Z

    2013-04-26

    Using spin-polarized low energy electron microscopy, we discovered a new type of domain wall structure in perpendicularly magnetized Fe/Ni bilayers grown epitaxially on Cu(100). Specifically, we observed unexpected Néel-type walls with fixed chirality in the magnetic stripe phase. Furthermore, we find that the chirality of the domain walls is determined by the film growth order with the chirality being right handed in Fe/Ni bilayers and left handed in Ni/Fe bilayers, suggesting that the underlying mechanism is the Dzyaloshinskii-Moriya interaction at the film interfaces. Our observations may open a new route to control chiral spin structures using interfacial engineering in transition metal heterostructures.

  10. Musculoskeletal chest wall pain

    PubMed Central

    Fam, Adel G.; Smythe, Hugh A.

    1985-01-01

    The musculoskeletal structures of the thoracic wall and the neck are a relatively common source of chest pain. Pain arising from these structures is often mistaken for angina pectoris, pleurisy or other serious disorders. In this article the clinical features, pathogenesis and management of the various musculoskeletal chest wall disorders are discussed. The more common causes are costochondritis, traumatic muscle pain, trauma to the chest wall, “fibrositis” syndrome, referred pain, psychogenic regional pain syndrome, and arthritis involving articulations of the sternum, ribs and thoracic spine. Careful analysis of the history, physical findings and results of investigation is essential for precise diagnosis and effective treatment. ImagesFig. 3Fig. 4Fig. 5 PMID:4027804

  11. Mouse bladder wall injection.

    PubMed

    Fu, Chi-Ling; Apelo, Charity A; Torres, Baldemar; Thai, Kim H; Hsieh, Michael H

    2011-07-12

    Mouse bladder wall injection is a useful technique to orthotopically study bladder phenomena, including stem cell, smooth muscle, and cancer biology. Before starting injections, the surgical area must be cleaned with soap and water and antiseptic solution. Surgical equipment must be sterilized before use and between each animal. Each mouse is placed under inhaled isoflurane anesthesia (2-5% for induction, 1-3% for maintenance) and its bladder exposed by making a midline abdominal incision with scissors. If the bladder is full, it is partially decompressed by gentle squeezing between two fingers. The cell suspension of interest is intramurally injected into the wall of the bladder dome using a 29 or 30 gauge needle and 1 cc or smaller syringe. The wound is then closed using wound clips and the mouse allowed to recover on a warming pad. Bladder wall injection is a delicate microsurgical technique that can be mastered with practice.

  12. Thermal treatment wall

    DOEpatents

    Aines, Roger D.; Newmark, Robin L.; Knauss, Kevin G.

    2000-01-01

    A thermal treatment wall emplaced to perform in-situ destruction of contaminants in groundwater. Thermal destruction of specific contaminants occurs by hydrous pyrolysis/oxidation at temperatures achievable by existing thermal remediation techniques (electrical heating or steam injection) in the presence of oxygen or soil mineral oxidants, such as MnO.sub.2. The thermal treatment wall can be installed in a variety of configurations depending on the specific objectives, and can be used for groundwater cleanup, wherein in-situ destruction of contaminants is carried out rather than extracting contaminated fluids to the surface, where they are to be cleaned. In addition, the thermal treatment wall can be used for both plume interdiction and near-wellhead in-situ groundwater treatment. Thus, this technique can be utilized for a variety of groundwater contamination problems.

  13. Axion domain wall baryogenesis

    SciTech Connect

    Daido, Ryuji; Kitajima, Naoya; Takahashi, Fuminobu

    2015-07-28

    We propose a new scenario of baryogenesis, in which annihilation of axion domain walls generates a sizable baryon asymmetry. Successful baryogenesis is possible for a wide range of the axion mass and decay constant, m≃10{sup 8}–10{sup 13} GeV and f≃10{sup 13}–10{sup 16} GeV. Baryonic isocurvature perturbations are significantly suppressed in our model, in contrast to various spontaneous baryogenesis scenarios in the slow-roll regime. In particular, the axion domain wall baryogenesis is consistent with high-scale inflation which generates a large tensor-to-scalar ratio within the reach of future CMB B-mode experiments. We also discuss the gravitational waves produced by the domain wall annihilation and its implications for the future gravitational wave experiments.

  14. Hot-electron energy relaxation time in Ga-doped ZnO films

    SciTech Connect

    Šermukšnis, E. Liberis, J.; Ramonas, M.; Matulionis, A.; Toporkov, M.; Liu, H. Y.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

    2015-02-14

    Hot-electron energy relaxation time is deduced for Ga-doped ZnO epitaxial layers from pulsed hot-electron noise measurements at room temperature. The relaxation time increases from ∼0.17 ps to ∼1.8 ps when the electron density increases from 1.4 × 10{sup 17 }cm{sup −3} to 1.3 × 10{sup 20 }cm{sup −3}. A local minimum is resolved near an electron density of 1.4 × 10{sup 19 }cm{sup −3}. The longest energy relaxation time (1.8 ps), observed at the highest electron density, is in good agreement with the published values obtained by optical time-resolved luminescence and absorption experiments. Monte Carlo simulations provide a qualitative interpretation of our observations if hot-phonon accumulation is taken into account. The local minimum of the electron energy relaxation time is explained by the ultrafast plasmon-assisted decay of hot phonons in the vicinity of the plasmon–LO-phonon resonance.

  15. Effects of high source flow and high pumping speed on gas source molecular beam epitaxy / chemical beam epitaxy

    NASA Astrophysics Data System (ADS)

    McCollum, M. J.; Jackson, S. L.; Szafranek, I.; Stillman, G. E.

    1990-10-01

    We report the growth of GaAs by molecular beam epitaxy (MBE), gas source molecular beam epitaxy (GSMBE), and chemical beam epitaxy (CBE) in an epitaxial III-V reactor which features high pumping speed. The system is comprised of a modified Perkin-Elmer 430P molecular beam epitaxy system and a custom gas source panel from Emcore. The growth chamber is pumped with a 7000 1/s (He) diffusion pump (Varian VHS-10 with Monsanto Santovac 5 oil). The gas source panel includes pressure based flow controllers (MKS 1150) allowing triethylaluminum (TEA), triethylgallium (TEG), and trimethylindium (TMI) to be supplied without the use of hydrogen. All source lines, including arsine and phosphine, are maintained below atmospheric pressure. The high pumping speed allows total system flow rates as high as 100 SCCM and V/III ratios as high as 100. The purity of GaAs grown by MBE in this system increases with pumping speed. GaAs layers grown by GSMBE with arsine flows of 10 and 20 SCCM have electron concentrations of 1 × 10 15 cm -3 (μ 77=48,000 cm 2/V·) and 2 × 10 14 cm -3 (μ 77=78,000 cm 2/V·s) respectively. El ectron concentration varies with hydride injector temperature such that the minimum in electron concentration occurs for less than complete cracking. The effect of V/III ratio and the use of a metal eutectic bubbler on residual carrier concentration in GaAs grown by CBE is presented. Intentional Si and Be doping of CBE grown GaAs is demonstrated at a high growth rate of 5.4 μm/h.

  16. Gullies in Crater Wall

    NASA Technical Reports Server (NTRS)

    2003-01-01

    MGS MOC Release No. MOC2-388, 11 June 2003

    Many craters and troughs at polar and middle latitudes on Mars have gullies carved in their walls. These gullies may have formed by running water; others have suggested alternative, exotic fluids such as liquid or gaseous carbon dioxide. This view of martian gullies was acquired by the Mars Global Surveyor (MGS) Mars Orbiter Camera (MOC). The image shows gullies in the wall of an old meteor impact crater near 39.0oS, 200.7oW. Sunlight illuminates the scene from the upper left.

  17. Gullied Crater Wall

    NASA Technical Reports Server (NTRS)

    2003-01-01

    MGS MOC Release No. MOC2-371, 25 May 2003

    Gullies are common in some regions on middle- and polar-latitude slopes, such as crater walls. This March 2003 Mars Global Surveyor (MGS) Mars Orbiter Camera (MOC) image shows gullies on the north wall of a crater in the Atlantis Chaos region near 34.3oS, 178.0oW. The gullies might have formed by flow of a fluid--perhaps liquid water--sometime in the geologically recent martian past. Sunlight illuminates the scene from the upper left.

  18. Refrigerator with anti-sweat hot liquid loop

    SciTech Connect

    Woolley, S.J.; Cushing, D.S.; Jenkins, T.E.; Gerdes, K.W.; Sisler, R.R.

    1988-04-05

    A cabinet assembly for a refrigerator having a freezer compartment ontop with two top front corners, a fresh food compartment on the bottom, a mullion partition between the compartments and a hot liquid anti-sweat loop is described comprising; an outer sheet metal shell having a top panel, side panels and a front face, a brace located at each of the two top front corners of the cabinet and having two formed sections at right angles to each other and each section is formed as an inwardly open U-shaped channel having a base, a first leg and a second leg spaced apart and integrally joined to the base, fastening means for rigidly attaching each of the second leg of the corner braces to the flange of the third wall of the front face, and means to secure a portion of the hot liquid anti-sweat loop to the braces.

  19. Reynolds number invariance of the structure inclination angle in wall turbulence.

    PubMed

    Marusic, Ivan; Heuer, Weston D C

    2007-09-14

    Cross correlations of the fluctuating wall-shear stress and the streamwise velocity in the logarithmic region of turbulent boundary layers are reported over 3 orders of magnitude change in Reynolds number. These results are obtained using hot-film and hot-wire anemometry in a wind tunnel facility, and sonic anemometers and a purpose-built wall-shear stress sensor in the near-neutral atmospheric surface layer on the salt flats of Utah's western desert. The direct measurement of fluctuating wall-shear stress in the atmospheric surface layer has not been available before. Structure inclination angles are inferred from the cross correlation results and are found to be invariant over the large range of Reynolds number. The findings justify the prior use of low Reynolds number experiments for obtaining structure angles for near-wall models in the large-eddy simulation of atmospheric surface layer flows.

  20. Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds

    NASA Astrophysics Data System (ADS)

    Iwinska, Malgorzata; Piotrzkowski, Ryszard; Litwin-Staszewska, Elzbieta; Sochacki, Tomasz; Amilusik, Mikolaj; Fijalkowski, Michal; Lucznik, Boleslaw; Bockowski, Michal

    2017-01-01

    GaN crystals were grown by hydride vapor phase epitaxy (HVPE) and doped with C. The seeds were high-structural-quality ammonothermally crystallized GaN. The grown crystals were highly resistive at 296 K and of high structural quality. High-temperature Hall effect measurements revealed p-type conductivity and a deep acceptor level in the material with an activation energy of 1 eV. This is in good agreement with density functional theory calculations based on hybrid functionals as presented by the Van de Walle group. They obtained an ionization energy of 0.9 eV when C was substituted for N in GaN and acted as a deep acceptor.

  1. Spontaneous formation of GaN/AlN core-shell nanowires on sapphire by hydride vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Trassoudaine, Agnès; Roche, Elissa; Bougerol, Catherine; André, Yamina; Avit, Geoffrey; Monier, Guillaume; Ramdani, Mohammed Réda; Gil, Evelyne; Castelluci, Dominique; Dubrovskii, Vladimir G.

    2016-11-01

    Spontaneous GaN/AlN core-shell nanowires with high crystal quality were synthesized on sapphire substrates by vapor-liquid-solid hydride vapor phase epitaxy (VLS-HVPE) without any voluntary aluminum source. Deposition of aluminum is difficult to achieve in this growth technique which uses metal-chloride gaseous precursors: the strong interaction between the AlCl gaseous molecules and the quartz reactor yields a huge parasitic nucleation on the walls of the reactor upstream the substrate. We open up an innovative method to produce GaN/AlN structures by HVPE, thanks to aluminum etching from the sapphire substrate followed by redeposition onto the sidewalls of the GaN core. The paper presents the structural characterization of GaN/AlN core-shell nanowires, speculates on the growth mechanism and discusses a model which describes this unexpected behavior.

  2. Cyclotron resonance in epitaxial Bi1-xSbx films grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Heremans, J.; Partin, D. L.; Thrush, C. M.; Karczewski, G.; Richardson, M. S.; Furdyna, J. K.

    1993-10-01

    The far-infrared magnetotransmission of thin films of semiconducting and semimetallic Bi1-xSbx alloys grown by molecular-beam epitaxy has been measured at fixed photon energies between 2.5 and 21.4 meV in magnetic fields up to 6 T, at T=1.8 K. The samples, grown on BaF2 substrates with composition 0<=x<=22.5%, were monocrystalline, with the trigonal axis perpendicular to the surface plane. The measurements were carried out in Faraday and Voigt geometries, with the magnetic field oriented parallel to binary, bisectrix, and trigonal axes of the films. Cyclotron-resonance lines of both electrons and holes were observed. From them, we establish the composition dependence of the effective-mass tensor, of the direct L-point band gap, and of the energy overlap in the semimetallic samples. We conclude that all band-structure parameters are the same in the films as in bulk Bi1-xSbx alloys, except for the energy overlap, which is increased by 16 meV independently of composition, possibly because of the strain induced by the substrate.

  3. The effect of anharmonicity in epitaxial interfaces. I. Substrate-induced dissociation of finite epitaxial islands

    NASA Astrophysics Data System (ADS)

    Milchev, Andrey; Markov, Ivan

    1984-01-01

    The behaviour of finite epitaxial islands in the periodic field of the substrate is theoretically investigated whereby the role of anharmonicity in the interatomic forces of the deposit is examined. The harmonic potential, traditionally adopted in the model of Frank and van der Merwe, is replaced by Toda and Morse potentials and sets of difference recursion equations, governing the static properties of such a system, are derived and solved numerically. Thus a new effect of substrate-induced rupture of anharmonic chains migrating on the surface, is found. It is shown that dissociation of migrating clusters is enhanced, if: (i) The substrate potential becomes increasingly modulated, (ii) the natural misfit between deposit and substrate is decreased (in absolute value), (iii) the misfit is negative, rather than positive (with the same absolute value) and (iv) the size of the cluster increases. A relation between dislocations in the chain and rupture appears to exist, suggesting dilatons (enormously stretched interatomic bonds) as the origin for destruction. The influence of anharmonicity on the equilibrium structure of the overgrowth is considered in Part II.

  4. Surface morphological evolution of epitaxial CrN(001) layers

    SciTech Connect

    Frederick, J.R.; Gall, D.

    2005-09-01

    CrN layers, 57 and 230 nm thick, were grown on MgO(001) at T{sub s}=600-800 deg. C by ultrahigh-vacuum magnetron sputter deposition in pure N{sub 2} discharges from an oblique deposition angle {alpha}=80 deg. . Layers grown at 600 deg. C nucleate as single crystals with a cube-on-cube epitaxial relationship with the substrate. However, rough surfaces with cauliflower-type morphologies cause the nucleation of misoriented CrN grains that develop into cone-shaped grains that protrude out of the epitaxial matrix to form triangular faceted surface mounds. The surface morphology of epitaxial CrN(001) grown at 700 deg. C is characterized by dendritic ridge patterns extending along the orthogonal <110> directions superposed by square-shaped super mounds with <100> edges. The ridge patterns are attributed to a Bales-Zangwill instability while the supermounds form due to atomic shadowing which leads to the formation of epitaxial inverted pyramids that are separated from the surrounding layer by tilted nanovoids. Growth at 800 deg. C yields complete single crystals with smooth surfaces. The root-mean-square surface roughness for 230-nm-thick layers decreases from 18.8 to 9.3 to 1.1 nm as T{sub s} is raised from 600 to 700 to 800 deg. C. This steep decrease is due to a transition in the roughening mechanism from atomic shadowing to kinetic roughening. Atomic shadowing is dominant at 600 and 700 deg. C, where misoriented grains and supermounds, respectively, capture a larger fraction of the oblique deposition flux in comparison to the surrounding epitaxial matrix, resulting in a high roughening rate that is described by a power law with an exponent {beta}>0.5. In contrast, kinetic roughening controls the surface morphology for T{sub s}=800 deg. C, as well as the epitaxial fraction of the layers grown at 600 and 700 deg. C, yielding relatively smooth surfaces and {beta}{<=}0.27.

  5. Thermal Stress in HFEF Hot Cell Windows Due to an In-Cell Metal Fire

    SciTech Connect

    Solbrig, Charles W.; Warmann, Stephen A.

    2016-01-01

    This work investigates an accident during the pyrochemical extraction of Uranium and Plutonium from PWR spent fuel in an argon atmosphere hot cell. In the accident, the heavy metals (U and Pu) being extracted are accidentally exposed to air from a leaky instrument penetration which goes through the cell walls. The extracted pin size pieces of U and Pu metal readily burn when exposed to air. Technicians perform the electrochemical extraction using manipulators through a 4 foot thick hot cell concrete wall which protects them from the radioactivity of the spent fuel. Four foot thick windows placed in the wall allow the technicians to visually control the manipulators. These windows would be exposed to the heat of the metal fire. As a result, this analysis determines if the thermal stress caused by the fire would crack the windows and if the heat would degrade the window seals allowing radioactivity to escape from the cell.

  6. Edge Plasma Analysis for Liquid-wall MFE Concepts

    SciTech Connect

    Moir, R W; Rensink, M; Rognlien, T D

    2000-09-21

    A thick flowing layer of liquid (e.g., flibe-a molten salt, or Sn{sub 80}Li{sub 20}--a liquid metal) protects the structural walls of the magnetic fusion configuration so that they can last the life of the plant even with intense 14 MeV neutron bombardment from the D-T fusion reaction, The surface temperature of the liquid rises as it passes from the inlet nozzles to the exit nozzles due to absorption of line and bremsstrahlung radiation, and neutrons. The surface temperature can be reduced by enhanced turbulent convection of hot surface liquid into the cooler interior. This surface temperature is affected by the temperature of liquid from a heat transport and energy recovery system. The evaporative flux from the wall driven by the surface temperature must also result in an acceptable impurity level in the core plasma. The shielding of the core by the edge plasma is modeled with a 2D-transport code for the DT and impurity ions; these impurity ions are either swept out to the divertor, or diffuse to the hot plasma core. An auxiliary plasma between the edge plasma and the liquid wall may further attenuate evaporating flux of atoms and molecules by ionization near the wall.

  7. TiO2 as an electrostatic template for epitaxial growth of EuO on MgO(001) by reactive molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Swartz, Adrian; Wong, Jared; Pinchuk, Igor; Kawakami, Roland

    2012-02-01

    Interfacial electrostatics play a key role in determining epitaxial quality in the heteroepitaxy of ionic rock salt materials. We investigate the initial growth modes and the role of interfacial electrostatic interactions of EuO epitaxy on MgO(001) by reactive molecular beam epitaxy. A TiO2 interfacial monolayer is employed to alleviate electrostatic interactions between the ions of the EuO and MgO to produce high quality epitaxial growth of EuO on MgO(001) with a 45 degree in plane rotation. For comparison, direct deposition of EuO on MgO, without the TiO2 layer, is discussed. A key difference of EuO epitaxy on TiO2/MgO is the ability to form EuO by substrate assisted oxidation and without the introduction of external oxygen to the interface. Such ultrathin films are shown to have bulk like magnetic properties

  8. Fly on the Wall

    ERIC Educational Resources Information Center

    Berry, Dave; Korpan, Cynthia

    2009-01-01

    This paper describes the implementation of a peer observation program at the University of Victoria called the Lecture Club. The observers are not interactive during the class--they are the proverbial flies on the wall. The paper identifies the program as self-developmental, discussing the attributes of this learning-to-teach and peer-sharing…

  9. A Wall of Faces

    ERIC Educational Resources Information Center

    Stevens, Lori

    2008-01-01

    Visitors to the campus of Orland High School (OHS) will never question that they have stepped into a world of the masses: kids, activity, personalities, busyness, and playfulness--a veritable cloud of mild bedlam. The wall of ceramic faces that greets a visitor in the school office is another reminder of the organized chaos that the teachers…

  10. A School without Walls.

    ERIC Educational Resources Information Center

    Venuti, Len Tai

    1994-01-01

    During the summer, selected students of Hawaiian ancestry who have completed seventh or eighth grade participate in a boarding program with outdoor activities such as pulling taro, star gazing, and camping. The activities eliminate walls of doubt and fear and nurture self-confidence, creativity, personal growth, leadership, and cultural awareness.…

  11. The Wall Coverings Challenge

    ERIC Educational Resources Information Center

    Roman, Harry T.

    2012-01-01

    Students love nothing better than personalizing their space--desk, bedroom, or even their cars. This article describes a classroom challenge that gives students a chance to let their spirits soar with the invention of a new form of wall treatment. A trip to a big box store might prove to be most helpful for students to visualize their new product…

  12. Wall turbulence control

    NASA Technical Reports Server (NTRS)

    Wilkinson, Stephen P.; Lindemann, A. Margrethe; Beeler, George B.; Mcginley, Catherine B.; Goodman, Wesley L.; Balasubramanian, R.

    1986-01-01

    A variety of wall turbulence control devices which were experimentally investigated are discussed; these include devices for burst control, alteration of outer flow structures, large eddy substitution, increased heat transfer efficiency, and reduction of wall pressure fluctuations. Control of pre-burst flow was demonstrated with a single, traveling surface depression which is phase-locked to elements of the burst production process. Another approach to wall turbulence control is to interfere with the outer layer coherent structures. A device in the outer part of a boundary layer was shown to suppress turbulence and reduce drag by opposing both the mean and unsteady vorticity in the boundary layer. Large eddy substitution is a method in which streamline curvature is introduced into the boundary layer in the form of streamwise vortices. Riblets, which were already shown to reduce turbulent drag, were also shown to exhibit superior heat transfer characteristics. Heat transfer efficiency as measured by the Reynolds Analogy Factor was shown to be as much as 36 percent greater than a smooth flat plate in a turbulent boundary layer. Large Eddy Break-Up (LEBU) which are also known to reduce turbulent drag were shown to reduce turbulent wall pressure fluctuation.

  13. Collision of domain walls in asymptotically anti-de Sitter spacetime

    SciTech Connect

    Takamizu, Yu-ichi; Maeda, Kei-ichi

    2006-05-15

    We study collision of two domain walls in five-dimensional asymptotically anti-de Sitter spacetime. This may provide the reheating mechanism of an ekpyrotic (or cyclic) brane universe, in which two Bogomol'nyi-Prasad-Sommerfield branes collide and evolve into a hot big bang universe. We evaluate a change of scalar field making the domain wall and can investigate the effect of a negative cosmological term in the bulk to the collision process and the evolution of our universe.

  14. Hot Alps (Invited)

    NASA Astrophysics Data System (ADS)

    Speranza, F.; Minelli, L.; Pignatelli, A.; Gilardi, M.

    2013-12-01

    Although it is frequently assumed that crust of Alpine orogens is hot due to the occurrence of thick and young (hence radiogenic) crust, evidence on the thermal ranking of orogens is contradictory. Heat flow measurements from shallow wells (depth ≤ 1 km) in the Alps yield a relatively cold thermal regime of 50-80 mW/m2, but data are likely biased by meteoric cold-water circulation. Here we report on the spectral analysis of the aeromagnetic residuals of northern Italy to derive the Curie point depth (CPD), assumed to represent the 600°C isotherm depth. Airborne magnetics were acquired on whole Italy during the 1970s by the national oil company AGIP (now Eni). Data were gathered by several surveys carried out at 1000-13,300 feet (300-4000 m) altitude, with flight line spacing of 2-10 km. Surveys of the Alps and Po Plain (northern Italy) were obtained both with a line spacing of 5 km (and 5 km tie lines), at an altitude of 4000-5000 and 13,300 feet, respectively. To evaluate CPDs we used the centroid method (routinely adopted in recent CPD studies on East Asia and central-southern Europe) on 72 square windows of 100-110 km edge, with a 50% degree of superposition. CPDs vary between 16 and 38 km (22 km on average) in the Po Plain, located south of the Alps and representing the Adriatic-African foreland area. Conversely, the Alps yield very shallow CPDs, ranging between 6 and 15 km (10 km on average). CPDs fall systematically above local Moho depths, implying that magnetic source bottoms documented in this study do not represent a lithological boundary over non-magnetic peridotitic mantle, but can be safely associated with CPDs and the 600°C isotherm. CPDs from the Po Plain are in rough agreement with reported heat flow values of 25-60 mW/m2, and imply and average thermal conductivity (k) of the Po Plain crust of 1.5 W/m°K, at the lower bound of k values measured and inferred for the crust. Conversely, the average 10 km CPD documented in the Alps translates into

  15. Lateral Abdominal Wall Reconstruction

    PubMed Central

    Baumann, Donald P.; Butler, Charles E.

    2012-01-01

    Lateral abdominal wall (LAW) defects can manifest as a flank hernias, myofascial laxity/bulges, or full-thickness defects. These defects are quite different from those in the anterior abdominal wall defects and the complexity and limited surgical options make repairing the LAW a challenge for the reconstructive surgeon. LAW reconstruction requires an understanding of the anatomy, physiologic forces, and the impact of deinnervation injury to design and perform successful reconstructions of hernia, bulge, and full-thickness defects. Reconstructive strategies must be tailored to address the inguinal ligament, retroperitoneum, chest wall, and diaphragm. Operative technique must focus on stabilization of the LAW to nonyielding points of fixation at the anatomic borders of the LAW far beyond the musculofascial borders of the defect itself. Thus, hernias, bulges, and full-thickness defects are approached in a similar fashion. Mesh reinforcement is uniformly required in lateral abdominal wall reconstruction. Inlay mesh placement with overlying myofascial coverage is preferred as a first-line option as is the case in anterior abdominal wall reconstruction. However, interposition bridging repairs are often performed as the surrounding myofascial tissue precludes a dual layered closure. The decision to place bioprosthetic or prosthetic mesh depends on surgeon preference, patient comorbidities, and clinical factors of the repair. Regardless of mesh type, the overlying soft tissue must provide stable cutaneous coverage and obliteration of dead space. In cases where the fasciocutaneous flaps surrounding the defect are inadequate for closure, regional pedicled flaps or free flaps are recruited to achieve stable soft tissue coverage. PMID:23372458

  16. Rapid Fabrication Techniques for Liquid Rocket Channel Wall Nozzles

    NASA Technical Reports Server (NTRS)

    Gradl, Paul R.

    2016-01-01

    The functions of a regeneratively-cooled nozzle are to (1) expand combustion gases to increase exhaust gas velocity while, (2) maintaining adequate wall temperatures to prevent structural failure, and (3) transfer heat from the hot gases to the coolant fluid to promote injector performance and stability. Regeneratively-cooled nozzles are grouped into two categories: tube-wall nozzles and channel wall nozzles. A channel wall nozzle is designed with an internal liner containing a series of integral coolant channels that are closed out with an external jacket. Manifolds are attached at each end of the nozzle to distribute coolant to and away from the channels. A variety of manufacturing techniques have been explored for channel wall nozzles, including state of the art laser-welded closeouts and pressure-assisted braze closeouts. This paper discusses techniques that NASA MSFC is evaluating for rapid fabrication of channel wall nozzles that address liner fabrication, slotting techniques and liner closeout techniques. Techniques being evaluated for liner fabrication include large-scale additive manufacturing of freeform-deposition structures to create the liner blanks. Abrasive water jet milling is being evaluated for cutting the complex coolant channel geometries. Techniques being considered for rapid closeout of the slotted liners include freeform deposition, explosive bonding and Cold Spray. Each of these techniques, development work and results are discussed in further detail in this paper.

  17. Decontamination of the Plum Brook Reactor Facility Hot Cells

    SciTech Connect

    Peecook, K.M.

    2008-07-01

    The NASA Plum Brook Reactor Facility decommissioning project recently completed a major milestone with the successful decontamination of seven hot cells. The cells included thick concrete walls and leaded glass windows, manipulator arms, inter cell dividing walls, and roof slabs. There was also a significant amount of embedded conduit and piping that had to be cleaned and surveyed. Prior to work starting evaluation studies were performed to determine whether it was more cost effective to do this work using a full up removal approach (rip and ship) or to decontaminate the cells to below required clean up levels, leaving the bulk of the material in place. This paper looks at that decision process, how it was implemented, and the results of that effort including the huge volume of material that can now be used as fill during site restoration rather than being disposed of as LLRW. (authors)

  18. Moisture Research - Optimizing Wall Assemblies

    SciTech Connect

    Arena, Lois; Mantha, Pallavi

    2013-05-01

    In this project, the Consortium for Advanced Residential Buildings (CARB) team evaluated several different configurations of wall assemblies to determine the accuracy of moisture modeling and make recommendations to ensure durable, efficient assemblies. WUFI and THERM were used to model the hygrothermal and heat transfer characteristics of these walls. Wall assemblies evaluated included code minimum walls using spray foam insulation and fiberglass batts, high R-value walls at least 12 in. thick (R-40 and R-60 assemblies), and brick walls with interior insulation.

  19. 1. SOUTHEAST REAR WALL AND NORTHEAST SIDE WALL OF CABINS ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    1. SOUTHEAST REAR WALL AND NORTHEAST SIDE WALL OF CABINS FORGEMAN'S HOUSE NO. 1 AT RIGHT - Mount Etna Iron Works, Forgeman's House No. 1, Legislative Route 07020 between junctions of T.R. 461 & 463, Williamsburg, Blair County, PA

  20. Typical Window, Interior Wall Paint Sequence, Wall Section, and Foundation ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Typical Window, Interior Wall Paint Sequence, Wall Section, and Foundation Sections - Civilian Conservation Corps (CCC) Camp NP-5-C, Barracks No. 5, CCC Camp Historic District at Chapin Mesa, Cortez, Montezuma County, CO

  1. 4. CONSTRUCTION DETAIL, SW CORNER, SHOWING RETAINING WALL, BRIDGE WALL ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    4. CONSTRUCTION DETAIL, SW CORNER, SHOWING RETAINING WALL, BRIDGE WALL AND EROSION ON ROAD SURFACE. - Bridalveil Fall Bridge No. 3, Spanning Bridalveil Creek on carriage road, Yosemite Village, Mariposa County, CA

  2. DETAIL OF CROCKETT BARN WALL CONSTRUCTION, UPPER LEVEL. The wall ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    DETAIL OF CROCKETT BARN WALL CONSTRUCTION, UPPER LEVEL. The wall construction of the Crockett barn includes a layer of diagonal sheathing that is exposed on the interior. - Crockett Farm, Barn, 1056 Fort Casey Road, Coupeville, Island County, WA

  3. Interior view of wall detail of southeast wall, view towards ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    Interior view of wall detail of southeast wall, view towards the southeast, without scale - Fort McClellan Ammunition Storage Area, Building No. 4408, Second Avenue (Magazine Road), Anniston, Calhoun County, AL

  4. EAST WALL OF CRYSTALLIZER WING TO THE LEFT, END WALL ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    EAST WALL OF CRYSTALLIZER WING TO THE LEFT, END WALL OF CRUSHING MILL IN CENTER. GABLE END OF BOILING HOUSE IN LEFT BACKGROUND. VIEW FROM THE SOUTH - Kekaha Sugar Company, Sugar Mill Building, 8315 Kekaha Road, Kekaha, Kauai County, HI

  5. 40. RETAINING WALL CONSTRUCTION SHOWING PORTION OF COMPLETED WALL. BACKFILLING ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    40. RETAINING WALL CONSTRUCTION SHOWING PORTION OF COMPLETED WALL. BACKFILLING BY POWER SHOVEL IN PROGRESS. ZION NP NEGATIVE NO. 1490. PHOTOGRAPHER: PARKER, NO DATE - Zion-Mount Carmel Highway, Springdale, Washington County, UT

  6. Investigation on the electron flux to the wall in the VENUS ion source.

    PubMed

    Thuillier, T; Angot, J; Benitez, J Y; Hodgkinson, A; Lyneis, C M; Todd, D S; Xie, D Z

    2016-02-01

    The long-term operation of high charge state electron cyclotron resonance ion sources fed with high microwave power has caused damage to the plasma chamber wall in several laboratories. Porosity, or a small hole, can be progressively created in the chamber wall which can destroy the plasma chamber over a few year time scale. A burnout of the VENUS plasma chamber is investigated in which the hole formation in relation to the local hot electron power density is studied. First, the results of a simple model assuming that hot electrons are fully magnetized and strictly following magnetic field lines are presented. The model qualitatively reproduces the experimental traces left by the plasma on the wall. However, it is too crude to reproduce the localized electron power density for creating a hole in the chamber wall. Second, the results of a Monte Carlo simulation, following a population of scattering hot electrons, indicate a localized high power deposited to the chamber wall consistent with the hole formation process. Finally, a hypervapotron cooling scheme is proposed to mitigate the hole formation in electron cyclotron resonance plasma chamber wall.

  7. Investigation on the electron flux to the wall in the VENUS ion source

    SciTech Connect

    Thuillier, T. Angot, J.

    2016-02-15

    The long-term operation of high charge state electron cyclotron resonance ion sources fed with high microwave power has caused damage to the plasma chamber wall in several laboratories. Porosity, or a small hole, can be progressively created in the chamber wall which can destroy the plasma chamber over a few year time scale. A burnout of the VENUS plasma chamber is investigated in which the hole formation in relation to the local hot electron power density is studied. First, the results of a simple model assuming that hot electrons are fully magnetized and strictly following magnetic field lines are presented. The model qualitatively reproduces the experimental traces left by the plasma on the wall. However, it is too crude to reproduce the localized electron power density for creating a hole in the chamber wall. Second, the results of a Monte Carlo simulation, following a population of scattering hot electrons, indicate a localized high power deposited to the chamber wall consistent with the hole formation process. Finally, a hypervapotron cooling scheme is proposed to mitigate the hole formation in electron cyclotron resonance plasma chamber wall.

  8. Investigation on the electron flux to the wall in the VENUS ion source

    NASA Astrophysics Data System (ADS)

    Thuillier, T.; Angot, J.; Benitez, J. Y.; Hodgkinson, A.; Lyneis, C. M.; Todd, D. S.; Xie, D. Z.

    2016-02-01

    The long-term operation of high charge state electron cyclotron resonance ion sources fed with high microwave power has caused damage to the plasma chamber wall in several laboratories. Porosity, or a small hole, can be progressively created in the chamber wall which can destroy the plasma chamber over a few year time scale. A burnout of the VENUS plasma chamber is investigated in which the hole formation in relation to the local hot electron power density is studied. First, the results of a simple model assuming that hot electrons are fully magnetized and strictly following magnetic field lines are presented. The model qualitatively reproduces the experimental traces left by the plasma on the wall. However, it is too crude to reproduce the localized electron power density for creating a hole in the chamber wall. Second, the results of a Monte Carlo simulation, following a population of scattering hot electrons, indicate a localized high power deposited to the chamber wall consistent with the hole formation process. Finally, a hypervapotron cooling scheme is proposed to mitigate the hole formation in electron cyclotron resonance plasma chamber wall.

  9. An Exploration of Wall Retrofit Best Practices

    SciTech Connect

    Stovall, Therese K; Petrie, Thomas; Kosny, Jan; Childs, Phillip W; Atchley, Jerald Allen; Hulvey, Kimberly D

    2007-01-01

    A series of experiments were performed to examine wall retrofit options including replacing the cladding, adding insulation under the cladding, and multiple sealing methods that can be used when installing replacement windows in well-built or loosely-built rough openings. These experiments included thermal measurements in a hot box and air-leakage measurements. The retrofit claddings considered included wood-lap siding, vinyl siding, and vinyl siding with an integrated and formed foam insulation. Retrofit insulations included expanded and extruded polystyrene and foil-faced polyisocyanurate in various thicknesses. Air sealing methods for replacement windows included traditional caulking, exterior trim variations, loose-fill fiberglass, low-expansion foam, self-expanding foam inserts, and specialty tape. Results were applied to a model to estimate whole-house energy impacts for multiple climates.

  10. Quantum Hall effect in epitaxial graphene with permanent magnets

    PubMed Central

    Parmentier, F. D.; Cazimajou, T.; Sekine, Y.; Hibino, H.; Irie, H.; Glattli, D. C.; Kumada, N.; Roulleau, P.

    2016-01-01

    We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications. PMID:27922114

  11. Silicon surface preparation for III-V molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Madiomanana, K.; Bahri, M.; Rodriguez, J. B.; Largeau, L.; Cerutti, L.; Mauguin, O.; Castellano, A.; Patriarche, G.; Tournié, E.

    2015-03-01

    We report on a silicon substrate preparation for III-V molecular-beam epitaxy (MBE). It combines sequences of ex situ and in situ treatments. The ex situ process is composed of cycles of HF dip and O2 plasma treatments. Ellipsometry and atomic force microscopy performed after each step during the substrate preparation reveal surface cleaning and de-oxidation. The in situ treatment consists in flash annealing the substrate in the MBE chamber prior to epitaxial growth. GaSb-based multiple quantum well heterostructures emitting at 1.55 μm were grown by MBE on Si substrates prepared by different methods. Structural characterizations using XRD and TEM coupled with photoluminescence spectroscopy demonstrates the efficiency of our preparation process. This study thus unravels a simple and reproducible protocol to prepare the Si surface prior to III-V MBE.

  12. Quantum Hall effect in epitaxial graphene with permanent magnets.

    PubMed

    Parmentier, F D; Cazimajou, T; Sekine, Y; Hibino, H; Irie, H; Glattli, D C; Kumada, N; Roulleau, P

    2016-12-06

    We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

  13. Anti-damping spin transfer torque through epitaxial nickel oxide

    SciTech Connect

    Moriyama, Takahiro; Nagata, Masaki; Yoshimura, Yoko; Matsuzaki, Noriko; Ono, Teruo; Takei, So; Tserkovnyak, Yaroslav; Terashima, Takahito

    2015-04-20

    We prepare the high quality epitaxial MgO(001)[100]/Pt(001)[100]/NiO(001)[100]/FeNi/SiO{sub 2} films to investigate the spin transport in the NiO antiferromagnetic insulator. The ferromagnetic resonance measurements of the FeNi under a spin current injection from the Pt by the spin Hall effect revealed the change of the ferromagnetic resonance linewidth depending on the amount of the spin current injection. The results can be interpreted that there is an angular momentum transfer through the NiO. A high efficient angular momentum transfer we observed in the epitaxial NiO can be attributed to the well-defined orientation of the antiferromagnetic moments and the spin quantization axis of the injected spin current.

  14. Nanoscale electrical properties of epitaxial Cu3Ge film

    PubMed Central

    Wu, Fan; Cai, Wei; Gao, Jia; Loo, Yueh-Lin; Yao, Nan

    2016-01-01

    Cu3Ge has been pursued as next-generation interconnection/contact material due to its high thermal stability, low bulk resistivity and diffusion barrier property. Improvements in electrical performance and structure of Cu3Ge have attracted great attention in the past decades. Despite the remarkable progress in Cu3Ge fabrication on various substrates by different deposition methods, polycrystalline films with excess Ge were frequently obtained. Moreover, the characterization of nanoscale electrical properties remains challenging. Here we show the fabrication of epitaxial Cu3Ge thin film and its nanoscale electrical properties, which are directly correlated with localized film microstructures and supported by HRTEM observations. The average resistivity and work function of epitaxial Cu3Ge thin film are measured to be 6 ± 1 μΩ cm and ~4.47 ± 0.02 eV respectively, qualifying it as a good alternative to Cu. PMID:27363582

  15. Quantum Hall effect in epitaxial graphene with permanent magnets

    NASA Astrophysics Data System (ADS)

    Parmentier, F. D.; Cazimajou, T.; Sekine, Y.; Hibino, H.; Irie, H.; Glattli, D. C.; Kumada, N.; Roulleau, P.

    2016-12-01

    We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

  16. Columnar epitaxy of hexagonal and orthorhombic silicides on Si(111)

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; Nieh, C. W.; Xiao, Q. F.; Hashimoto, Shin

    1990-01-01

    Columnar grains of PtSi and CrSi2 surrounded by high-quality epitaxial silicon are obtained by ultrahigh vacuum codeposition of Si and metal in an approximately 10:1 ratio on Si(111) substrates heated to 610-840 C. This result is similar to that found previously for CoSi2 (a nearly-lattice-matched cubic-fluorite crystal) on Si(111), in spite of the respective orthorhombic and hexagonal structures of PtSi and CrSi2. The PtSi grains are epitaxial and have one of three variants of the relation defined by PtSi(010)/Si(111), with PtSi 001 line/Si 110 line type.

  17. Characteristics of strong ferromagnetic Josephson junctions with epitaxial barriers

    NASA Astrophysics Data System (ADS)

    Bell, C.; Loloee, R.; Burnell, G.; Blamire, M. G.

    2005-05-01

    We present the measurement of superconductor/ferromagnetic Josephson junctions, based on an epitaxial Nb bottom electrode and epitaxial Fe20Ni80 barrier. Uniform junctions have been fabricated with a barrier thicknesses in the range 2-12nm . The maximum critical current density ˜2.4±0.2×109Am-2 was found for a device with a 3-nm -thick barrier at 4.2K , corresponding to an average characteristic voltage ICRN˜16μV . The ICRN showed a nonmonotonic behavior with Fe20Ni80 thickness. The variation of the resistance of a unit area ARN , of the junctions with barrier thickness gave a Nb/Py specific interface resistance of 6.0±0.5fΩm2 and Fe20Ni80 resistivity of 174±50nΩm , consistent with other studies in polycrystalline samples.

  18. Oxidized Monolayers of Epitaxial Silicene on Ag(111)

    PubMed Central

    Johnson, Neil W.; Muir, David I.; Moewes, Alexander

    2016-01-01

    The properties of epitaxial silicene monolayers on Ag(111) at various levels of oxidation are determined through complementary density functional theory calculations and soft X-ray spectroscopy experiments. Our calculations indicate that moderate levels of oxidation do not cause a significant bandgap opening in the epitaxial silicene monolayer, suggesting that oxygen functionalization is not a viable mechanism for bandgap tuning while the silicene monolayer remains on its metallic substrate. In addition, moderate oxidation is calculated to strongly distort the hexagonal Si lattice, causing it to cluster in regions of highest oxygen adatom concentration but retain its 2D sheet structure. However, our experiments reveal that beam-induced oxidation is consistent with the formation of islands of bulk-like SiO2. Complete exposure of the monolayer to ambient conditions results in a fully oxidized sample that closely resembles bulk SiO2, of which a significant portion is completely detached from the substrate. PMID:26936144

  19. On the kinetic barriers of graphene homo-epitaxy

    SciTech Connect

    Zhang, Wei; Yu, Xinke; Xie, Ya-Hong; Cahyadi, Erica; Ratsch, Christian

    2014-12-01

    The diffusion processes and kinetic barriers of individual carbon adatoms and clusters on graphene surfaces are investigated to provide fundamental understanding of the physics governing epitaxial growth of multilayer graphene. It is found that individual carbon adatoms form bonds with the underlying graphene whereas the interaction between graphene and carbon clusters, consisting of 6 atoms or more, is very weak being van der Waals in nature. Therefore, small carbon clusters are quite mobile on the graphene surfaces and the diffusion barrier is negligibly small (∼6 meV). This suggests the feasibility of high-quality graphene epitaxial growth at very low growth temperatures with small carbon clusters (e.g., hexagons) as carbon source. We propose that the growth mode is totally different from 3-dimensional bulk materials with the surface mobility of carbon hexagons being the highest over graphene surfaces that gradually decreases with further increase in cluster size.

  20. Wind tunnels with adapted walls for reducing wall interference

    NASA Technical Reports Server (NTRS)

    Ganzer, U.

    1979-01-01

    The basic principle of adaptable wind tunnel walls is explained. First results of an investigation carried out at the Aero-Space Institute of Berlin Technical University are presented for two dimensional flexible walls and a NACA 0012 airfoil. With five examples exhibiting very different flow conditions it is demonstrated that it is possible to reduce wall interference and to avoid blockage at transonic speeds by wall adaptation.

  1. Graphene Substrate for van der Waals Epitaxy of Layer-Structured Bismuth Antimony Telluride Thermoelectric Film.

    PubMed

    Kim, Eun Sung; Hwang, Jae-Yeol; Lee, Kyu Hyoung; Ohta, Hiromichi; Lee, Young Hee; Kim, Sung Wng

    2017-02-01

    Graphene as a substrate for the van der Waals epitaxy of 2D layered materials is utilized for the epitaxial growth of a layer-structured thermoelectric film. Van der Waals epitaxial Bi0.5 Sb1.5 Te3 film on graphene synthesized via a simple and scalable fabrication method exhibits good crystallinity and high thermoelectric transport properties comparable to single crystals.

  2. Metal-Organic Vapor Phase Epitaxial Reactor for the Deposition of Infrared Detector Materials

    DTIC Science & Technology

    2015-04-09

    2010 14-Mar-2013 Approved for Public Release; Distribution Unlimited Final Report: Metalorganic Vapor Phase Epitaxial Reactor for the Deposition of...ADDRESS (ES) U.S. Army Research Office P.O. Box 12211 Research Triangle Park, NC 27709-2211 Epitaxial reactor , MOCVD, Infrared Materials, CdTe and...Final Report: Metalorganic Vapor Phase Epitaxial Reactor for the Deposition of Infrared Detector Materials Report Title A fully automated

  3. Gradient bounds for a thin film epitaxy equation

    NASA Astrophysics Data System (ADS)

    Li, Dong; Qiao, Zhonghua; Tang, Tao

    2017-02-01

    We consider a gradient flow modeling the epitaxial growth of thin films with slope selection. The surface height profile satisfies a nonlinear diffusion equation with biharmonic dissipation. We establish optimal local and global wellposedness for initial data with critical regularity. To understand the mechanism of slope selection and the dependence on the dissipation coefficient, we exhibit several lower and upper bounds for the gradient of the solution in physical dimensions d ≤ 3.

  4. Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom

    SciTech Connect

    Goyal, Amit

    2013-07-09

    A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallographic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A-plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.

  5. Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom

    SciTech Connect

    Goyal, Amit

    2012-07-24

    A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallographic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A-plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.

  6. Measurement of magnetostriction coefficients of epitaxial garnet films.

    PubMed

    Vella-Coleiro, G P

    1979-09-01

    A technique for measuring the magnetostriction coefficients of epitaxial garnet films on 50-mm-diam wafers is described. The measurement is based on the shift of the microwave ferrimagnetic resonance produced by stressing the film, which is achieved by supporting the wafer around its circumference and reducing the atmospheric pressure on one side. A simple, nonresonant transmission microwave spectrometer which is well suited for measurements on large wafers is also described.

  7. Thermoreversible, epitaxial fcc<-->bcc transitions in block copolymer solutions.

    PubMed

    Bang, Joona; Lodge, Timothy P; Wang, Xiaohui; Brinker, Kristin L; Burghardt, Wesley R

    2002-11-18

    Uncharged block copolymer micelles display thermoreversible transitions between close-packed and bcc lattices for a range of concentration, solvent selectivity, and copolymer composition. Using small-angle x-ray scattering on shear-oriented solutions, highly aligned fcc crystals are seen to transform epitaxially to bcc crystals, with fcc/bcc orientational relationships that are well established in martensitic transformations in metals. The transition is driven by decreasing solvent selectivity with increasing temperature, inducing solvent penetration of the micellar core.

  8. Fundamental Study of Antimonide Nanostructures by Molecular Beam Epitaxy

    DTIC Science & Technology

    2016-02-04

    to conduct experimental work in molecular beam epitaxial growth of GaSb/GaAs and InSb/GaAs quantum dots (QDs) are conducted and compared with...Nanoelectronics, Quantum Nanostructures 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT SAR 18. NUMBER OF PAGES 10 19a.  NAME OF...September 2014 to July 2015 being conducted at Chulalongkorn University in Thailand. Following the research work on InAs quantum dots (QDs) and quantum

  9. Robust surface states in epitaxial Bi(111) thin films

    NASA Astrophysics Data System (ADS)

    Zhu, Kai; Jin, Xiaofeng

    Bulk Bi a prototype semimetal with trivial electronic band topology. Unanticipatedly, we show the Altshuler-Aronov-Spivak and Aharonov-Bohm effects in epitaxial Bi(111) thin films. Meanwhile, we clearly identify the interaction of the top and bottom surface states via quantum tunneling by the electrical conductance and weak anti-localization measurements. These results have significantly enriched our understanding about the electronic structure of Bi, which might be helpful for clearing up some of its longstanding subtle issues.

  10. Three-dimensional lattice matching of epitaxially embedded nanoparticles

    NASA Astrophysics Data System (ADS)

    May, Brelon J.; Anderson, Peter M.; Myers, Roberto C.

    2017-02-01

    For a given degree of in-plane lattice mismatch between a two-dimensional (2D) epitaxial layer and a substrate (εIP*), there is a critical thickness above which interfacial defects form to relax the elastic strain energy. Here, we extend the 2D lattice-matching conditions to three-dimensions in order to predict the critical size beyond which epitaxially encased nanoparticles, characterized by both εIP* and out-of-plane lattice mismatch (εOP*), relax by dislocation formation. The critical particle length (Lc) at which defect formation proceeds is determined by balancing the reduction in elastic energy associated with dislocation introduction with the corresponding increase in defect energy. Our results, which use a modified Eshelby inclusion technique for an embedded, arbitrarily-faceted nanoparticle, provide new insight to the nanoepitaxy of low dimensional structures, especially quantum dots and nanoprecipitates. By engineering εIP* and εOP*, the predicted Lc for nanoparticles can be increased to well beyond the case of encapsulation in a homogenous matrix. For the case of truncated pyramidal shaped InAs, Lc 10.8 nm when fully embedded in GaAs (εIP* = εOP* = - 0.072); 16.4 nm when the particle is grown on GaAs, but capped with InSb (εIP* = - 0.072 and εOP* =+0.065); and a maximum of 18.4 nm if capped with an alloy corresponding to εOP* =+0.037. The effect, which we term "3D Poisson-stabilization" provides a means to increase the epitaxial strain tolerance in epitaxial heterostructures by tailoring εOP*.

  11. Microwave studies of weak localization and antilocalization in epitaxial graphene

    SciTech Connect

    Drabińska, Aneta; Kamińska, Maria; Wołoś, Agnieszka; Baranowski, J. M.

    2013-12-04

    A microwave detection method was applied to study weak localization and antilocalization in epitaxial graphene sheets grown on both polarities of SiC substrates. Both coherence and scattering length values were obtained. The scattering lengths were found to be smaller for graphene grown on C-face of SiC. The decoherence rate was found to depend linearly on temperature, showing the electron-electron scattering mechanism.

  12. Ferroelastic twin structures in epitaxial WO{sub 3} thin films

    SciTech Connect

    Yun, Shinhee; Woo, Chang-Su; Lee, Jin Hong; Chu, Kanghyun; Kim, Gi-Yeop; Choi, Si-Young; Sharma, Pankaj; Seidel, Jan; Song, Jong Hyun; Chung, Sung-Yoon; Yang, Chan-Ho

    2015-12-21

    Tungsten trioxide is a binary oxide that has potential applications in electrochromic windows, gas sensors, photo-catalysts, and superconductivity. Here, we analyze the crystal structure of atomically flat epitaxial layers on YAlO{sub 3} single crystal substrates and perform nanoscale investigations of the ferroelastic twins revealing a hierarchical structure at multiple length scales. We have found that the finest stripe ferroelastic twin walls along pseudocubic 〈100〉 axes are associated with cooperative mosaic rotations of the monoclinic films and the larger stripe domains along pseudocubic 〈110〉 axes are created to reduce the misfit strain through a commensurate matching of an effective in-plane lattice parameter between film and substrate. The typical widths of the two fine and larger stripe domains increase with film thickness following a power law with scaling exponents of ∼0.6 and ∼0.4, respectively. We have also found that the twin structure can be readily influenced by illumination with an electron beam or a tip-based mechanical compression.

  13. Thermodynamics of the quasi-epitaxial flavin assembly around various-chirality carbon nanotubes.

    PubMed

    Sharifi, Roholah; Samaraweera, Milinda; Gascón, José A; Papadimitrakopoulos, Fotios

    2014-05-21

    Establishing methods to accurately assess and model the binding strength of surfactants around a given-chirality single-walled carbon nanotube (SWNT) are crucial for selective enrichment, targeted functionalization, and spectrally sharp nanodevices. Unlike surfactant exchange, which is subject to interferences from the second surfactant, we herein introduce a thermal dissociation method based on reversible H(+)/O2 doping to determine SWNT/surfactant thermodynamic stability values with greater fidelity. Thermodynamic values were reproduced using molecular mechanics augmented by ab initio calculations in order to better assess π-π interactions. This afforded detailed quantification of the flavin binding strength in terms of π-π stacking (55-58%), with the remaining portion roughly split 3:1 between electrostatic plus van der Waals flavin mononucleotide (FMN) interdigitation and H-bonding interactions, respectively. Quasi-epitaxial π-π alignment between the near-armchair FMN helix and the underlying nanotube lattice plays a crucial role in stabilizing these assemblies. The close resemblance of the thermal dissociation method to helix-coil and ligand-binding transitions of DNA opens up a unique insight into the molecular engineering of self-organizing surfactants around various-chirality nanotubes.

  14. Creep-free ac hysteretic dynamics in epitaxial ferroelectric BiFeO3 films

    NASA Astrophysics Data System (ADS)

    Shin, Yeongjae; Jeon, Byung Chul; Yang, Sang Mo; Hwang, Inrok; Cho, Myung Rae; Sando, Daniel; Lee, Seung Ran; Yoon, Jong-Gul; Noh, Tae Won

    2015-03-01

    Dynamics of domain wall (DW) in ferroelectric (FE) films principally governs their switching properties under applied electric field (E) . At finite temperature (T) , the DW motion and their FE switching characteristics can be understood only by introducing the creep motion. Despite this importance, there have been little studies on creep motion of FE films under ac-driven force. In this work, we investigate ac-driven hysteretic dynamics of FE domains in epitaxial BiFeO3 (BFO) films through polarization-electric field hysteresis loops with varying frequency and other switching characters. All BFO films were grown at the optimized growth condition, by employing different bottom electrodes of La0.67Sr0.33MnO3 (LSMO) and SrRuO3 (SRO); only BFO/SRO shows nearly creep-free hysteretic dynamics. We argue that inhomogeneous internal E plays a significant role in such distinctive FE dynamics of BFO domains, which are affected by surface morphologies of bottom electrodes. Our results highlight that growth-mode-induced interfacial structure between an FE film and a bottom electrode result in engineering domain dynamics of FE switching characteristics. This work was supported by IBS-R009-D1.

  15. Investigation of the growth of garnet films by liquid phase epitaxy

    NASA Technical Reports Server (NTRS)

    Moody, J. W.; Shaw, R. W.; Sandfort, R. M.

    1974-01-01

    Liquid phase expitaxy was investigated to determine its applicability to fabricating magnetic rare earth garnet films for spacecraft data recording systems. Two mixed garnet systems were investigated in detail: (1) Gd-Y and (2) Eu-Yb-Y. All films were deposited on Gd3Ga5012 substrates. The uniaxial anisotropy of the Gd-Y garnets is primarily stress-induced. These garnets are characterized by high-domain wall mobility, low coercivity and modest anisotropy. Characteristic length was found to be relatively sensitive to temperature. The Eu-Yb-Y garnets exhibit acceptable mobilities, good temperature stability and reasonable quality factors. The uniaxial anisotropy of these garnets is primarily growth-induced. The system is well suited for compositional "tailoring" to optimize specific desirable properties. Liquid phase epitaxy can be used to deposit Gd3Ga5012 spacing layers on magnetic garnet films and this arrangement possesses certain advantages over more conventional magnetic filmspacing layer combinations. However, it cannot be used if the magnetic film is to be ion implanted.

  16. Control of magnetization reversal by combining shape and magnetocrystalline anisotropy in epitaxial Fe planar nanowires.

    PubMed

    Paz, E; Cebollada, F; Palomares, F J; García-Sánchez, F; González, J M

    2010-06-25

    This work presents an analysis of the in-plane magnetization reversal mechanisms of Fe nanowires, with widths from 100 nm to 1 microm, fabricated in epitaxial Au(001)/Fe(001)/MgO(001) thin films by means of focused ion and electron beam lithographies, with either positive or negative resist. The experimental results show that the switching mechanisms and hysteresis are almost exclusively functions of the dimensions of the wires and of the Fe intrinsic properties, with minor influence of the specific fabrication route employed upon optimization of nanostructure parameters in terms of crystallinity and morphology, and well defined and reproducible geometry. The reversal processes evolve from wall pinning at low angles between the applied field and the axis of the wires to basically uniform magnetization rotation at high angles. This behaviour can be described in terms of single spin configurations, thus ruling out the formation of multidomain structures even at high angles. The ability to achieve these high quality and well controlled nanowires allowed us to develop an analytical model, based on uniform magnetization configurations considering just the intrinsic Fe properties and the shape and dimensions of the wires. This simple approach provides a very good qualitative and quantitative agreement with the experimental results, thus evidencing the relatively small role of other extrinsic factors in the magnetization processes.

  17. Magnetic domain wall manipulation in (Ga,Mn)As nanostructures for spintronic applications

    SciTech Connect

    Wosinski, Tadeusz; Andrearczyk, Tomasz; Figielski, Tadeusz; Olender, Karolina; Wrobel, Jerzy

    2014-02-21

    Ring-shaped nanostructures have been designed and fabricated by electron-beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As. The nanostructures, in a form of planar rings with a slit, were supplied with four electrical terminals and subjected to magneto-transport studies under planar weak magnetic field. Magnetoresistive effects caused by manipulation of magnetic domain walls and magnetization reversal in the nanostructures have been investigated and possible applications of the nanostructures as four-terminal spintronic devices are discussed.

  18. Prometheus Hot Leg Piping Concept

    NASA Astrophysics Data System (ADS)

    Gribik, Anastasia M.; DiLorenzo, Peter A.

    2007-01-01

    The Naval Reactors Prime Contractor Team (NRPCT) recommended the development of a gas cooled reactor directly coupled to a Brayton energy conversion system as the Space Nuclear Power Plant (SNPP) for NASA's Project Prometheus. The section of piping between the reactor outlet and turbine inlet, designated as the hot leg piping, required unique design features to allow the use of a nickel superalloy rather than a refractory metal as the pressure boundary. The NRPCT evaluated a variety of hot leg piping concepts for performance relative to SNPP system parameters, manufacturability, material considerations, and comparison to past high temperature gas reactor (HTGR) practice. Manufacturability challenges and the impact of pressure drop and turbine entrance temperature reduction on cycle efficiency were discriminators between the piping concepts. This paper summarizes the NRPCT hot leg piping evaluation, presents the concept recommended, and summarizes developmental issues for the recommended concept.

  19. Promethus Hot Leg Piping Concept

    SciTech Connect

    AM Girbik; PA Dilorenzo

    2006-01-24

    The Naval Reactors Prime Contractor Team (NRPCT) recommended the development of a gas cooled reactor directly coupled to a Brayton energy conversion system as the Space Nuclear Power Plant (SNPP) for NASA's Project Prometheus. The section of piping between the reactor outlet and turbine inlet, designated as the hot leg piping, required unique design features to allow the use of a nickel superalloy rather than a refractory metal as the pressure boundary. The NRPCT evaluated a variety of hot leg piping concepts for performance relative to SNPP system parameters, manufacturability, material considerations, and comparison to past high temperature gas reactor (HTGR) practice. Manufacturability challenges and the impact of pressure drop and turbine entrance temperature reduction on cycle efficiency were discriminators between the piping concepts. This paper summarizes the NRPCT hot leg piping evaluation, presents the concept recommended, and summarizes developmental issues for the recommended concept.

  20. Prometheus Hot Leg Piping Concept

    SciTech Connect

    Gribik, Anastasia M.; DiLorenzo, Peter A.

    2007-01-30

    The Naval Reactors Prime Contractor Team (NRPCT) recommended the development of a gas cooled reactor directly coupled to a Brayton energy conversion system as the Space Nuclear Power Plant (SNPP) for NASA's Project Prometheus. The section of piping between the reactor outlet and turbine inlet, designated as the hot leg piping, required unique design features to allow the use of a nickel superalloy rather than a refractory metal as the pressure boundary. The NRPCT evaluated a variety of hot leg piping concepts for performance relative to SNPP system parameters, manufacturability, material considerations, and comparison to past high temperature gas reactor (HTGR) practice. Manufacturability challenges and the impact of pressure drop and turbine entrance temperature reduction on cycle efficiency were discriminators between the piping concepts. This paper summarizes the NRPCT hot leg piping evaluation, presents the concept recommended, and summarizes developmental issues for the recommended concept.

  1. 25. NORTH TRAINING WALL, EAST SECTION, SIDE WALL CONSTRUCTION, LOOKING ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    25. NORTH TRAINING WALL, EAST SECTION, SIDE WALL CONSTRUCTION, LOOKING WEST FROM A POINT ABOUT 500 FEET FROM THE MIDDLE HARBOR PARK FISHING PIER. (Panoramic view 1 of 2). - Oakland Harbor Training Walls, Mouth of Federal Channel to Inner Harbor, Oakland, Alameda County, CA

  2. High-R Walls for Remodeling. Wall Cavity Moisture Monitoring

    SciTech Connect

    Wiehagen, J.; Kochkin, V.

    2012-12-01

    The focus of the study is on the performance of wall systems, and in particular, the moisture characteristics inside the wall cavity and in the wood sheathing. Furthermore, while this research will initially address new home construction, the goal is to address potential moisture issues in wall cavities of existing homes when insulation and air sealing improvements are made.

  3. High-R Walls for Remodeling: Wall Cavity Moisture Monitoring

    SciTech Connect

    Wiehagen, J.; Kochkin, V.

    2012-12-01

    The focus of the study is on the performance of wall systems, and in particular, the moisture characteristics inside the wall cavity and in the wood sheathing. Furthermore, while this research will initially address new home construction, the goal is to address potential moisture issues in wall cavities of existing homes when insulation and air sealing improvements are made.

  4. Logic Gates Made of N-Channel JFETs and Epitaxial Resistors

    NASA Technical Reports Server (NTRS)

    Krasowski, Michael J.

    2008-01-01

    Prototype logic gates made of n-channel junction field-effect transistors (JFETs) and epitaxial resistors have been demonstrated, with a view toward eventual implementation of digital logic devices and systems in silicon carbide (SiC) integrated circuits (ICs). This development is intended to exploit the inherent ability of SiC electronic devices to function at temperatures from 300 to somewhat above 500 C and withstand large doses of ionizing radiation. SiC-based digital logic devices and systems could enable operation of sensors and robots in nuclear reactors, in jet engines, near hydrothermal vents, and in other environments that are so hot or radioactive as to cause conventional silicon electronic devices to fail. At present, current needs for digital processing at high temperatures exceed SiC integrated circuit production capabilities, which do not allow for highly integrated circuits. Only single to small number component production of depletion mode n-channel JFETs and epitaxial resistors on a single substrate is possible. As a consequence, the fine matching of components is impossible, resulting in rather large direct-current parameter distributions within a group of transistors typically spanning multiples of 5 to 10. Add to this the lack of p-channel devices to complement the n-channel FETs, the lack of precise dropping diodes, and the lack of enhancement mode devices at these elevated temperatures and the use of conventional direct coupled and buffered direct coupled logic gate design techniques is impossible. The presented logic gate design is tolerant of device parameter distributions and is not hampered by the lack of complementary devices or dropping diodes. In addition to n-channel JFETs, these gates include level-shifting and load resistors (see figure). Instead of relying on precise matching of parameters among individual JFETS, these designs rely on choosing the values of these resistors and of supply potentials so as to make the circuits perform

  5. Polydomain structures in ferroelectric and ferroelastic epitaxial films

    NASA Astrophysics Data System (ADS)

    Roytburd, Alexander L.; Ouyang, Jun; Artemev, Andrei

    2017-04-01

    A review of theoretical models, phase field modeling and experimental studies of domain structures in epitaxial films is presented. The thermodynamic theory of such domain structures is presented within the macroscopic thermo-mechanical framework. The theory allows for the evaluation of the main parameters of the domain structure using the energy minimization approach applied to the energy of elastic interactions. For homophase (polytwin) films, the thermodynamic theory provides a quantitative tool that can be used to estimate domain fractions in the film and the type of domain structure architecture. For heterophase films, the theory describes (a) the conditions under which two-phase structures can be obtained in epitaxial films, and (b) the phase and domain fractions in these films. The thermodynamic theory can also be used to describe the extrinsic contributions from domain structures to the functional properties of epitaxial ferroelectric films. The review of phase field modeling demonstrates that computational results reproduce the predictions of the thermodynamic theory. It is also shown that the phase field modeling that utilizes the energy minimization procedure for elastic and interfacial energies can be used to predict domain morphology for the films with two-phase structures produced either by phase transformation or through the co-deposition of immiscible phases. The experimental data presented in the review validate predictions of the thermodynamic model and the results of phase field modeling.

  6. Terahertz and mid-infrared reflectance of epitaxial graphene

    PubMed Central

    Santos, Cristiane N.; Joucken, Frédéric; De Sousa Meneses, Domingos; Echegut, Patrick; Campos-Delgado, Jessica; Louette, Pierre; Raskin, Jean-Pierre; Hackens, Benoit

    2016-01-01

    Graphene has emerged as a promising material for infrared (IR) photodetectors and plasmonics. In this context, wafer scale epitaxial graphene on SiC is of great interest in a variety of applications in optics and nanoelectronics. Here we present IR reflectance spectroscopy of graphene grown epitaxially on the C-face of 6H-SiC over a broad optical range, from terahertz (THz) to mid-infrared (MIR). Contrary to the transmittance, reflectance measurements are not hampered by the transmission window of the substrate, and in particular by the SiC Reststrahlen band in the MIR. This allows us to present IR reflectance data exhibiting a continuous evolution from the regime of intraband to interband charge carrier transitions. A consistent and simultaneous analysis of the contributions from both transitions to the optical response yields precise information on the carrier dynamics and the number of layers. The properties of the graphene layers derived from IR reflection spectroscopy are corroborated by other techniques (micro-Raman and X-ray photoelectron spectroscopies, transport measurements). Moreover, we also present MIR microscopy mapping, showing that spatially-resolved information can be gathered, giving indications on the sample homogeneity. Our work paves the way for a still scarcely explored field of epitaxial graphene-based THz and MIR optical devices. PMID:27102827

  7. Compliant substrate epitaxy: Au on MoS2

    NASA Astrophysics Data System (ADS)

    Zhou, Yuzhi; Kiriya, Daisuke; Haller, E. E.; Ager, Joel W.; Javey, Ali; Chrzan, D. C.

    2016-02-01

    A theory for the epitaxial growth of Au on MoS2 is developed and analyzed. The theory combines continuum linear elasticity theory with density functional theory to analyze epitaxial growth in this system. It is demonstrated that if one accounts for interfacial energies and strains, the presence of misfit dislocations, and the compliance of the MoS2 substrate, the experimentally observed growth orientation is favored despite the fact that it represents a larger elastic mismatch than two competing structures. The stability of the experimentally preferred orientation is attributed to the formation of a large number of strong Au-S bonds, and it is noted that this strong bond may serve as a means to exfoliate and transfer large single layers sheets of MoS2, as well as to engineer strain within single layers of MoS2. The potential for using a van der Waals-bonded layered material as a compliant substrate for applications in 2D electronic devices and epitaxial thin film growth is discussed.

  8. Ultrafast transient reflectance of epitaxial semiconducting perovskite thin films

    NASA Astrophysics Data System (ADS)

    Smolin, S. Y.; Scafetta, M. D.; Guglietta, G. W.; Baxter, J. B.; May, S. J.

    2014-07-01

    Ultrafast pump-probe transient reflectance (TR) spectroscopy was used to study carrier dynamics in an epitaxial perovskite oxide thin film of LaFeO3 (LFO) with a thickness of 40 unit cells (16 nm) grown by molecular beam epitaxy on (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT). TR spectroscopy shows two negative transients in reflectance with local maxima at ˜2.5 eV and ˜3.5 eV which correspond to two optical transitions in LFO as determined by ellipsometry. The kinetics at these transients were best fit with an exponential decay model with fast (5-40 ps), medium (˜200 ps), and slow (˜ 3 ns) components that we attribute mainly to recombination of photoexcited carriers. Moreover, these reflectance transients did not completely decay within the observable time window, indicating that ˜10% of photoexcited carriers exist for at least 3 ns. This work illustrates that TR spectroscopy can be performed on thin (<20 nm) epitaxial oxide films to provide a quantitative understanding of recombination lifetimes, which are important parameters for the potential utilization of perovskite films in photovoltaic and photocatalytic applications.

  9. Identifying potential BO2 oxide polymorphs for epitaxial growth candidates.

    PubMed

    Mehta, Prateek; Salvador, Paul A; Kitchin, John R

    2014-03-12

    Transition metal dioxides (BO2) exhibit a number of polymorphic structures with distinct properties, but the isolation of different polymorphs for a given composition is carried out using trial and error experimentation. We present computational studies of the relative stabilities and equations of state for six polymorphs (anatase, brookite, rutile, columbite, pyrite, and fluorite) of five different BO2 dioxides (B = Ti, V, Ru, Ir, and Sn). These properties were computed in a consistent fashion using several exchange correlation functionals within the density functional theory formalism, and the effects of the different functionals are discussed relative to their impact on predictive synthesis. We compare the computational results to prior observations of high-pressure synthesis and epitaxial film growth and then use this discussion to predict new accessible polymorphs in the context of epitaxial stabilization using isostructural substrates. For example, the relative stabilities of the columbite polymorph for VO2 and RuO2 are similar to those of TiO2 and SnO2, the latter two of which have been previously stabilized as epitaxial films.

  10. Epitaxial nucleation of CVD bilayer graphene on copper.

    PubMed

    Song, Yenan; Zhuang, Jianing; Song, Meng; Yin, Shaoqian; Cheng, Yu; Zhang, Xuewei; Wang, Miao; Xiang, Rong; Xia, Yang; Maruyama, Shigeo; Zhao, Pei; Ding, Feng; Wang, Hongtao

    2016-12-08

    Bilayer graphene (BLG) has emerged as a promising candidate for next-generation electronic applications, especially when it exists in the Bernal-stacked form, but its large-scale production remains a challenge. Here we present an experimental and first-principles calculation study of the epitaxial chemical vapor deposition (CVD) nucleation process for Bernal-stacked BLG growth on Cu using ethanol as a precursor. Results show that a carefully adjusted flow rate of ethanol can yield a uniform BLG film with a surface coverage of nearly 90% and a Bernal-stacking ratio of nearly 100% on ordinary flat Cu substrates, and its epitaxial nucleation of the second layer is mainly due to the active CH3 radicals with the presence of a monolayer-graphene-covered Cu surface. We believe that this nucleation mechanism will help clarify the formation of BLG by the epitaxial CVD process, and lead to many new strategies for scalable synthesis of graphene with more controllable structures and numbers of layers.

  11. Archaeal Nitrification in Hot Springs

    NASA Astrophysics Data System (ADS)

    Richter, A.; Daims, H.; Reigstad, L.; Wanek, W.; Wagner, M.; Schleper, C.

    2006-12-01

    Biological nitrification, i.e. the aerobic conversion of ammonia to nitrate via nitrite, is a major component of the global nitrogen cycle. Until recently, it was thought that the ability to aerobically oxidize ammonia was confined to bacteria of the phylum Proteobacteria. However, it has recently been shown that Archaea of the phylum Crenarchaeota are also capable of ammonia oxidation. As many Crenarchaeota are thermophilic or hyperthermophilic, and at least some of them are capable of ammonia oxidation we speculated on the existence of (hyper)thermophilic ammonia-oxidizing archaea (AOA). Using PCR primers specifically targeting the archaeal ammonia monooxygenase (amoA) gene, we were indeed able to confirm the presence of such organisms in several hot springs in Reykjadalur, Iceland. These hot springs exhibited temperatures well above 80 °C and pH values ranging from 2.0 to 4.5. To proof that nitrification actually took place under these extreme conditions, we measured gross nitrification rates by the isotope pool dilution method; we added 15N-labelled nitrate to the mud and followed the dilution of the label by nitrate production from ammonium either in situ (incubation in the hot spring) or under controlled conditions in the laboratory (at 80 °C). The nitrification rates in the hot springs ranged from 0.79 to 2.22 mg nitrate-N per L of mud and day. Controls, in which microorganisms were killed before the incubations, demonstrated that the nitrification was of biological origin. Addition of ammonium increased the gross nitrification rate approximately 3-fold, indicating that the nitrification was ammonium limited under the conditions used. Collectively, our study provides evidence that (1) AOA are present in hot springs and (2) that they are actively nitrifying. These findings have major implications for our understanding of nitrogen cycling of hot environments.

  12. Malleability of uranium: Manipulating the charge-density wave in epitaxial films

    NASA Astrophysics Data System (ADS)

    Springell, R.; Ward, R. C. C.; Bouchet, J.; Chivall, J.; Wermeille, D.; Normile, P. S.; Langridge, S.; Zochowski, S. W.; Lander, G. H.

    2014-06-01

    We report x-ray synchrotron experiments on epitaxial films of uranium, deposited on niobium and tungsten seed layers. Despite similar lattice parameters for these refractory metals, the uranium epitaxial arrangements are different and the strains propagated along the orthorhombic a axis of the uranium layers are of opposite sign. At low temperatures these changes in epitaxy result in dramatic modifications to the behavior of the charge-density wave in uranium. The differences are explained with the current theory for the electron-phonon coupling in the uranium lattice. Our results emphasize the intriguing possibilities of producing epitaxial films of elements that have complex structures like the light actinides uranium to plutonium.

  13. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

    DOEpatents

    McKee, Rodney A.; Walker, Frederick J.

    1993-01-01

    A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

  14. DIELECTRIC WALL ACCELERATOR TECHNOLOGY

    SciTech Connect

    Sampayan, S; Caporaso, G; Chen, Y; Harris, J; Hawkins, S; Holmes, C; Nelson, S; Poole, B; Rhodes, M; Sanders, D; Sullivan, J; Wang, L; Watson, J

    2007-10-18

    The dielectric wall accelerator (DWA) is a compact pulsed power device where the pulse forming lines, switching, and vacuum wall are integrated into a single compact geometry. For this effort, we initiated a extensive compact pulsed power development program and have pursued the study of switching (gas, oil, laser induced surface flashover and photoconductive), dielectrics (ceramics and nanoparticle composites), pulse forming line topologies (asymmetric and symmetric Blumleins and zero integral pulse forming lines), and multilayered vacuum insulator (HGI) technology. Finally, we fabricated an accelerator cell for test on ETAII (a 5.5 MeV, 2 kA, 70 ns pulsewidth electron beam accelerator). We review our past results and report on the progress of accelerator cell testing.

  15. The Dielectric Wall Accelerator

    SciTech Connect

    Caporaso, George J.; Chen, Yu-Jiuan; Sampayan, Stephen E.

    2009-01-01

    The Dielectric Wall Accelerator (DWA), a class of induction accelerators, employs a novel insulating beam tube to impress a longitudinal electric field on a bunch of charged particles. The surface flashover characteristics of this tube may permit the attainment of accelerating gradients on the order of 100 MV/m for accelerating pulses on the order of a nanosecond in duration. A virtual traveling wave of excitation along the tube is produced at any desired speed by controlling the timing of pulse generating modules that supply a tangential electric field to the tube wall. Because of the ability to control the speed of this virtual wave, the accelerator is capable of handling any charge to mass ratio particle; hence it can be used for electrons, protons and any ion. The accelerator architectures, key technologies and development challenges will be described.

  16. Hot conditioning equipment conceptual design report

    SciTech Connect

    Bradshaw, F.W., Westinghouse Hanford

    1996-08-06

    This report documents the conceptual design of the Hot Conditioning System Equipment. The Hot conditioning System will consist of two separate designs: the Hot Conditioning System Equipment; and the Hot Conditioning System Annex. The Hot Conditioning System Equipment Design includes the equipment such as ovens, vacuum pumps, inert gas delivery systems, etc.necessary to condition spent nuclear fuel currently in storage in the K Basins of the Hanford Site. The Hot Conditioning System Annex consists of the facility of house the Hot Conditioning System. The Hot Conditioning System will be housed in an annex to the Canister Storage Building. The Hot Conditioning System will consist of pits in the floor which contain ovens in which the spent nuclear will be conditioned prior to interim storage.

  17. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  18. Menopausal hot flashes: Randomness or rhythmicity

    NASA Astrophysics Data System (ADS)

    Kronenberg, Fredi

    1991-10-01

    Menopausal hot flashes are episodes of flushing, increased heart rate, skin blood flow and skin temperature, and a sensation of heat. The thermoregulatory and cardiovascular concomitants of hot flashes are associated with peaks in the levels of various hormones and neurotransmitters in the peripheral circulation. Although hot flashes affect about 75% of women, and are the primary reason that women at menopause seek medical attention, the mechanism of hot flashes is still not understood. Hot flashes vary in frequency and intensity both within and between individuals, and have been thought of as occurring randomly. Yet, some women report that their hot flashes are worse at a particular time of day or year. Initial examination of subjects' recordings of their hot flashes showed diurnal patterns of hot flash occurrence. There also seems to be a diurnal rhythm of hot flash intensity. Continuous physiological monitoring of hot flashes is facilitating the analysis of these patterns, which is revealing circadian and ultradian periodicities. The occurrence of hot flashes can be modulated by external and internal factors, including ambient temperature and fever. Rhythms of thermoregulatory and endocrine functions also may influence hot flash patterns. Examination of the interrelationships between the various systems of the body involved in hot flashes, and a multidisciplinary approach to the analysis of hot flash patterns, will aid our understanding of this complex phenomenon.

  19. DEVELOPMENT OF METALLIC HOT GAS FILTERS

    SciTech Connect

    Anderson, I.E.; Gleeson, B.; Terpstra, R.L.

    2003-04-23

    Successful development of metallic filters with high temperature oxidation/corrosion resistance for fly ash capture is a key to enabling advanced coal combustion and power generation technologies. Compared to ceramic filters, metallic filters can offer increased resistance to impact and thermal fatigue, greatly improving filter reliability. A beneficial metallic filter structure, composed of a thin-wall (0.5mm) tube with uniform porosity (about 30%), is being developed using a unique spherical powder processing and partial sintering approach, combined with porous sheet rolling and resistance welding. Alloy choices based on modified superalloys, e.g., Ni-16Cr-4.5Al-3Fe (wt.%), are being tested in porous and bulk samples for oxide (typically alumina) scale stability in simulated oxidizing/sulfidizing atmospheres found in PFBC and IGCC systems at temperatures up to 850 C. Recent ''hanging o-ring'' exposure tests in actual combustion systems at a collaborating DOE site (EERC) have been initiated to study the combined corrosive effects from particulate deposits and hot exhaust gases. New studies are exploring the correlation between sintered microstructure, tensile strength, and permeability of porous sheet samples.

  20. Wall-to-suspension heat transfer in circulating fluidized beds

    SciTech Connect

    Wirth, K.E.

    1995-12-31

    The wall-to-suspension heat transfer in circulating fluidized beds depends on the fluid mechanics immediately near the wall and on the thermal properties of the gas used. Experimental investigations of circulating fluidized beds of low dimensionless pressure gradients with different solid particles like bronze, glass and polystyrene at ambient temperatures showed no influence of the conductivity and the heat capacity of the solids on the heat transfer coefficient. Consequently the heat transfer coefficient in the form of the dimensionless Nusselt number can be described by the dimensionless numbers which characterize the gas-solid-flow near the wall. These numbers are the Archimedes number and the pressure drop-number. The last number relates the cross-sectional average solids concentration to the solids concentration at minimum fluidization condition. With the aid of a model of segregated vertical gas-solid flow, the flow pattern in the wall region can be calculated and thus the wall heat transfer which depends only on heat conduction in the gas and on the convective heat transfer by the gas. With elevated suspension temperatures, radiation contributes additionally to the heat transfer. When the solids concentration is low, the effect of the radiation on the heat transfer is high. Increasing solids concentration results in a decrease of the radiation effect due to the wall being shielded from the radiation of the hot particles in the core region by the cold solids clusters moving down the wall. A simple correlation is presented for calculating the wall-to-suspension heat transfer in circulating fluidized beds.

  1. Electron microscopy of Staphylococcus aureus cell wall lysis.

    PubMed

    Virgilio, R; González, C; Muñoz, N; Mendoza, S

    1966-05-01

    Virgilio, Rafael (Escuela de Química y Farmacia, Universidad de Chile, Santiago, Chile), C. González, Nubia Muñoz, and Silvia Mendoza. Electron microscopy of Staphylococcus aureus cell wall lysis. J. Bacteriol. 91:2018-2024. 1966.-A crude suspension of Staphylococcus aureus cell walls (strain Cowan III) in buffer solution was shown by electron microscopy to lyse slightly after 16 hr, probably owing to the action of autolysin. The lysis was considerably faster and more intense after the addition of lysozyme. A remarkable reduction in thickness and rigidity of the cell walls, together with the appearance of many irregular protrusions in their outlines, was observed after 2 hr; after 16 hr, there remained only a few recognizable cell wall fragments but many residual particulate remnants. When autolysin was previously inactivated by trypsin, there was a complete inhibition of the lytic action of lysozyme; on the other hand, when autolysin was inactivated by heat and lysozyme was added, a distinct decrease in the thickness of the cell walls was observed, but there was no destruction of the walls. The lytic action of lysozyme, after treatment with hot 5% trichloroacetic acid, gave rise to a marked dissolution of the structure of the cell walls, which became lost against the background, without, however, showing ostensible alteration of wall outlines. From a morphological point of view, the lytic action of autolysin plus lysozyme was quite different from that of trichloroacetic acid plus lysozyme, as shown by electron micrographs, but in both cases it was very intense. This would suggest different mechanisms of action for these agents.

  2. Curtain Wall Creates Ventilation Channel

    NASA Technical Reports Server (NTRS)

    Lewis, E. V.

    1985-01-01

    Curtain-wall structure proposed for removing methane and airborne coal dust from hydrojet-jaw mining machines. Channel between curtain wall and mine wall forms closed exhaust passage. Through it, gas and dust continuously removed so high concentrations of these explosive materials not build up.

  3. Molded Concrete Center Mine Wall

    NASA Technical Reports Server (NTRS)

    Lewis, E. V.

    1987-01-01

    Proposed semiautomatic system forms concrete-foam wall along middle of coal-mine passage. Wall helps support roof and divides passage into two conduits needed for ventilation of coal face. Mobile mold and concrete-foam generator form sections of wall in place.

  4. Raman spectra of epitaxial graphene on SiC and of epitaxial graphene transferred to SiO2.

    PubMed

    Lee, Dong Su; Riedl, Christian; Krauss, Benjamin; von Klitzing, Klaus; Starke, Ulrich; Smet, Jurgen H

    2008-12-01

    Raman spectra were measured for mono-, bi-, and trilayer graphene grown on SiC by solid state graphitization, whereby the number of layers was preassigned by angle-resolved ultraviolet photoemission spectroscopy. It was found that the only unambiguous fingerprint in Raman spectroscopy to identify the number of layers for graphene on SiC(0001) is the line width of the 2D (or D*) peak. The Raman spectra of epitaxial graphene show significant differences as compared to micromechanically cleaved graphene obtained from highly oriented pyrolytic graphite crystals. The G peak is found to be blue-shifted. The 2D peak does not exhibit any obvious shoulder structures, but it is much broader and almost resembles a single-peak even for multilayers. Flakes of epitaxial graphene were transferred from SiC onto SiO2 for further Raman studies. A comparison of the Raman data obtained for graphene on SiC with data for epitaxial graphene transferred to SiO2 reveals that the G peak blue-shift is clearly due to the SiC substrate. The broadened 2D peak however stems from the graphene structure itself and not from the substrate.

  5. Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Jiang, Quanzhong; Allsopp, Duncan W. E.; Bowen, Chris R.

    2017-04-01

    Heat extraction is often essential in ensuring efficient performance of semiconductor devices and requires minimising the thermal resistance between the functional semiconductor layers and any heat sink. This paper reports the epitaxial growth of N-polar GaN films on polycrystalline diamond substrates of high thermal conductivity with metal-organic vapor phase epitaxy, by using a Si x C layer formed during deposition of polycrystalline diamond on a silicon substrate. The Si x C layer acts to provide the necessary structure ordering information for the formation of a single crystal GaN film at the wafer scale. It is shown that a three-dimensional island (3D) growth process removes hexagonal defects that are induced by the non-single crystal nature of the Si x C layer. It is also shown that intensive 3D growth and the introduction of a convex curvature of the substrate can be deployed to reduce tensile stress in the GaN epitaxy to enable the growth of a crack-free layer up to a thickness of 1.1µm. The twist and tilt can be as low as 0.65° and 0.39° respectively, values broadly comparable with GaN grown on Si substrates with a similar structure.

  6. Origins of Hot Jupiters, Revisited

    NASA Astrophysics Data System (ADS)

    Batygin, Konstantin; Bodenheimer, Peter; Laughlin, Greg

    2016-05-01

    Hot Jupiters, giant extrasolar planets with orbital periods less than ~10 days, have long been thought to form at large radial distances (a > 2AU) in protoplanetary disks, only to subsequently experience large-scale inward migration to the small orbital radii at which they are observed. Here, we propose that a substantial fraction of the hot Jupiter population forms in situ, with the Galactically prevalent short-period super-Earths acting as the source population. Our calculations suggest that under conditions appropriate to the inner regions of protoplanetary disks, rapid gas accretion can be initiated for solid cores of 10-20 Earth masses, in line with the conventional picture of core-nucleated accretion. The planetary conglomeration process, coupled with subsequent gravitational contraction and spin down of the host star, drives sweeping secular resonances through the system, increasing the mutual inclinations of exterior, low-mass companions to hot Jupiters. Accordingly, this formation scenario leads to testable consequences, including the expectation that hot Jupiters should frequently be accompanied by additional non-transiting planets, reminiscent of those observed in large numbers by NASA’s Kepler Mission and Doppler velocity surveys. High-precision radial velocity monitoring provides the best prospect for their detection.

  7. Microsensor Hot-Film Anemometer

    NASA Technical Reports Server (NTRS)

    Mcginley, Catherine B.; Stephens, Ralph; Hopson, Purnell; Bartlett, James E.; Sheplak, Mark; Spina, Eric F.

    1995-01-01

    Improved hot-film anemometer developed for making high-bandwidth turbulence measurements in moderate-enthalpy supersonic and hypersonic flows (e.g., NASP inlets and control surfaces, HSCT jet exhaust). Features include low thermal inertia, ruggedness, and reduced perturbation of flow.

  8. Hot, Cold, and Really Cold.

    ERIC Educational Resources Information Center

    Leyden, Michael

    1997-01-01

    Describes a physics experiment investigating temperature prediction and the relationship between the physical properties of heat units, melting, dissolving, states of matter, and energy loss. Details the experimental setup, which requires hot and cold water, a thermometer, and ice. Notes that the experiment employs a deliberate counter-intuitive…

  9. Solar Hot Water Hourly Simulation

    SciTech Connect

    Walker, Howard Andrew

    2009-12-31

    The Software consists of a spreadsheet written in Microsoft Excel which provides an hourly simulation of a solar hot water heating system (including solar geometry, solar collector efficiency as a function of temperature, energy balance on storage tank and lifecycle cost analysis).

  10. Sources of antibiotics: Hot springs.

    PubMed

    Mahajan, Girish B; Balachandran, Lakshmi

    2016-11-24

    The discovery of antibiotics heralded an era of improved health care. However, the over-prescription and misuse of antibiotics resulted in the development of resistant strains of various pathogens. Since then, there has been an incessant search for discovering novel compounds from bacteria at various locations with extreme conditions. The soil is one of the most explored locations for bioprospecting. In recent times, hypersaline environments and symbiotic associations have been investigated for novel antimicrobial compounds. Among the extreme environments, hot springs are comparatively less explored. Many researchers have reported the presence of microbial life and secretion of antimicrobial compounds by microorganisms in hot springs. A pioneering research in the corresponding author's laboratory resulted in the identification of the antibiotic Fusaricidin B isolated from a hot spring derived eubacteria, Paenibacillus polymyxa, which has been assigned a new application for its anti-tubercular properties. The corresponding author has also reported anti-MRSA and anti-VRE activity of 73 bacterial isolates from hot springs in India.

  11. Types of Hot Jupiter Atmospheres

    NASA Astrophysics Data System (ADS)

    Bisikalo, Dmitry V.; Kaygorodov, Pavel V.; Ionov, Dmitry E.; Shematovich, Valery I.

    Hot Jupiters, i.e. exoplanet gas giants, having masses comparable to the mass of Jupiter and semimajor axes shorter than 0.1 AU, are a unique class of objects. Since they are so close to the host stars, their atmospheres form and evolve under the action of very active gas dynamical processes caused by the gravitational field and irradiation of the host star. As a matter of fact, the atmospheres of several of these planets fill their Roche lobes , which results in a powerful outflow of material from the planet towards the host star. The energy budget of this process is so important that it almost solely governs the evolution of hot Jupiters gaseous envelopes. Based on the years of experience in the simulations of gas dynamics in mass-exchanging close binary stars, we have investigated specific features of hot Jupiters atmospheres. The analytical estimates and results of 3D numerical simulations, discussed in this Chapter, show that the gaseous envelopes around hot Jupiters may be significantly non-spherical and, at the same time, stationary and long-lived. These results are of fundamental importance for the interpretation of observational data.

  12. Detection of Hot Halo Gets Theory Out of Hot Water

    NASA Astrophysics Data System (ADS)

    2006-02-01

    Scientists using NASA's Chandra X-ray Observatory have detected an extensive halo of hot gas around a quiescent spiral galaxy. This discovery is evidence that galaxies like our Milky Way are still accumulating matter from the gradual inflow of intergalactic gas. "What we are likely witnessing here is the ongoing galaxy formation process," said Kristian Pedersen of the University of Copenhagen, Denmark, and lead author of a report on the discovery. Chandra observations show that the hot halo extends more than 60,000 light years on either side of the disk of the galaxy known as NGC 5746. The detection of such a large halo alleviates a long-standing problem for the theory of galaxy formation. Spiral galaxies are thought to form from enormous clouds of intergalactic gas that collapse to form giant, spinning disks of stars and gas. Chandra X-ray Image of NGC 5746 Chandra X-ray Image of NGC 5746 One prediction of this theory is that large spiral galaxies should be immersed in halos of hot gas left over from the galaxy formation process. Hot gas has been detected around spiral galaxies in which vigorous star formation is ejecting matter from the galaxy, but until now hot halos due to infall of intergalactic matter have not been detected. "Our observations solve the mystery of the missing hot halos around spiral galaxies," said Pedersen. "The halos exist, but are so faint that an extremely sensitive telescope such as Chandra is needed to detect them." DSS Optical Image of NGC 5746 DSS Optical Image of NGC 5746 NGC 5746 is a massive spiral galaxy about a 100 million light years from Earth. Its disk of stars and gas is viewed almost edge-on. The galaxy shows no signs of unusual star formation, or energetic activity from its nuclear region, making it unlikely that the hot halo is produced by gas flowing out of the galaxy. "We targeted NGC 5746 because we thought its distance and orientation would give us the best chance to detect a hot halo caused by the infall of

  13. Left ventricular wall stress compendium.

    PubMed

    Zhong, L; Ghista, D N; Tan, R S

    2012-01-01

    Left ventricular (LV) wall stress has intrigued scientists and cardiologists since the time of Lame and Laplace in 1800s. The left ventricle is an intriguing organ structure, whose intrinsic design enables it to fill and contract. The development of wall stress is intriguing to cardiologists and biomedical engineers. The role of left ventricle wall stress in cardiac perfusion and pumping as well as in cardiac pathophysiology is a relatively unexplored phenomenon. But even for us to assess this role, we first need accurate determination of in vivo wall stress. However, at this point, 150 years after Lame estimated left ventricle wall stress using the elasticity theory, we are still in the exploratory stage of (i) developing left ventricle models that properly represent left ventricle anatomy and physiology and (ii) obtaining data on left ventricle dynamics. In this paper, we are responding to the need for a comprehensive survey of left ventricle wall stress models, their mechanics, stress computation and results. We have provided herein a compendium of major type of wall stress models: thin-wall models based on the Laplace law, thick-wall shell models, elasticity theory model, thick-wall large deformation models and finite element models. We have compared the mean stress values of these models as well as the variation of stress across the wall. All of the thin-wall and thick-wall shell models are based on idealised ellipsoidal and spherical geometries. However, the elasticity model's shape can vary through the cycle, to simulate the more ellipsoidal shape of the left ventricle in the systolic phase. The finite element models have more representative geometries, but are generally based on animal data, which limits their medical relevance. This paper can enable readers to obtain a comprehensive perspective of left ventricle wall stress models, of how to employ them to determine wall stresses, and be cognizant of the assumptions involved in the use of specific models.

  14. Enriching the hot circumgalactic medium

    NASA Astrophysics Data System (ADS)

    Crain, Robert A.; McCarthy, Ian G.; Schaye, Joop; Theuns, Tom; Frenk, Carlos S.

    2013-07-01

    Simple models of galaxy formation in a cold dark matter universe predict that massive galaxies are surrounded by a hot, quasi-hydrostatic circumgalactic corona of slowly cooling gas, predominantly accreted from the intergalactic medium (IGM). This prediction is borne out by the recent cosmological hydrodynamical simulations of Crain et al., which reproduce observed scaling relations between the X-ray and optical properties of nearby disc galaxies. Such coronae are metal poor, but observations of the X-ray emitting circumgalactic medium (CGM) of local galaxies typically indicate enrichment to near-solar iron abundance, potentially signalling a shortcoming in current models of galaxy formation. We show here that, while the hot CGM of galaxies formed in the simulations is typically metal poor in a mass-weighted sense, its X-ray luminosity-weighted metallicity is often close to solar. This bias arises because the soft X-ray emissivity of a typical ˜0.1 keV corona is dominated by collisionally excited metal ions that are synthesized in stars and recycled into the hot CGM. We find that these metals are ejected primarily by stars that form in situ to the main progenitor of the galaxy, rather than in satellites or external galaxies. The enrichment of the hot CGM therefore proceeds in an `inside-out' fashion throughout the assembly of the galaxy: metals are transported from the central galaxy by supernova-driven winds and convection over several Gyr, establishing a strong negative radial metallicity gradient. Whilst metal ions synthesized by stars are necessary to produce the X-ray emissivity that enables the hot CGM of isolated galaxies to be detected with current instrumentation, the electrons that collisionally excite them are equally important. Since our simulations indicate that the electron density of hot coronae is dominated by the metal-poor gas accreted from the IGM, we infer that the hot CGM observed via X-ray emission is the outcome of both hierarchical

  15. Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates: A word of caution for the epitaxial growers

    SciTech Connect

    Chatterjee, Abhishek Khamari, Shailesh K.; Kumar, R.; Dixit, V. K.; Oak, S. M.; Sharma, T. K.

    2015-01-12

    GaN templates grown by hydride vapour phase epitaxy (HVPE) and metal organic vapour phase epitaxy (MOVPE) techniques are compared through electronic transport measurements. Carrier concentration measured by Hall technique is about two orders larger than the values estimated by capacitance voltage method for HVPE templates. It is learnt that there exists a critical thickness of HVPE templates below which the transport properties of epitaxial layers grown on top of them are going to be severely limited by the density of charged dislocations lying at layer-substrate interface. On the contrary MOVPE grown templates are found to be free from such limitations.

  16. CONTROL HOUSE, TRA620. MASONS ERECT PUMICE BLOCK WALLS. BUILDING WILL ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    CONTROL HOUSE, TRA-620. MASONS ERECT PUMICE BLOCK WALLS. BUILDING WILL CONTROL ACCESS TO MTR AND OTHER "HOT" AND CLASSIFIED AREAS. INL NEGATIVE NO. 577. Unknown Photographer, 9/11/1950 - Idaho National Engineering Laboratory, Test Reactor Area, Materials & Engineering Test Reactors, Scoville, Butte County, ID

  17. Production of vertical arrays of small diameter single-walled carbon nanotubes

    DOEpatents

    Hauge, Robert H; Xu, Ya-Qiong

    2013-08-13

    A hot filament chemical vapor deposition method has been developed to grow at least one vertical single-walled carbon nanotube (SWNT). In general, various embodiments of the present invention disclose novel processes for growing and/or producing enhanced nanotube carpets with decreased diameters as compared to the prior art.

  18. A&M. TAN607. Structural supports for biparting door on east wall ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    A&M. TAN-607. Structural supports for biparting door on east wall of hot shop. Special services cubicle shielding. Ralph M. Parsons 902-3-ANP-607-S141. Date: December 1952. Approved by INEEL Classification Office for public release. INEEL index code no. 034-0607-60-693-106785 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

  19. Preliminary safety analysis report for the Auxiliary Hot Cell Facility, Sandia National Laboratories, Albuquerque, New Mexico

    SciTech Connect

    OSCAR,DEBBY S.; WALKER,SHARON ANN; HUNTER,REGINA LEE; WALKER,CHERYL A.

    1999-12-01

    The Auxiliary Hot Cell Facility (AHCF) at Sandia National Laboratories, New Mexico (SNL/NM) will be a Hazard Category 3 nuclear facility used to characterize, treat, and repackage radioactive and mixed material and waste for reuse, recycling, or ultimate disposal. A significant upgrade to a previous facility, the Temporary Hot Cell, will be implemented to perform this mission. The following major features will be added: a permanent shield wall; eight floor silos; new roof portals in the hot-cell roof; an upgraded ventilation system; and upgraded hot-cell jib crane; and video cameras to record operations and facilitate remote-handled operations. No safety-class systems, structures, and components will be present in the AHCF. There will be five safety-significant SSCs: hot cell structure, permanent shield wall, shield plugs, ventilation system, and HEPA filters. The type and quantity of radionuclides that could be located in the AHCF are defined primarily by SNL/NM's legacy materials, which include radioactive, transuranic, and mixed waste. The risk to the public or the environment presented by the AHCF is minor due to the inventory limitations of the Hazard Category 3 classification. Potential doses at the exclusion boundary are well below the evaluation guidelines of 25 rem. Potential for worker exposure is limited by the passive design features incorporated in the AHCF and by SNL's radiation protection program. There is no potential for exposure of the public to chemical hazards above the Emergency Response Protection Guidelines Level 2.

  20. Hot outflows in galaxy clusters

    NASA Astrophysics Data System (ADS)

    Kirkpatrick, C. C.; McNamara, B. R.

    2015-10-01

    The gas-phase metallicity distribution has been analysed for the hot atmospheres of 29 galaxy clusters using Chandra X-ray Observatory observations. All host brightest cluster galaxies (BCGs) with X-ray cavity systems produced by radio AGN. We find high elemental abundances projected preferentially along the cavities of 16 clusters. The metal-rich plasma was apparently lifted out of the BCGs with the rising X-ray cavities (bubbles) to altitudes between twenty and several hundred kiloparsecs. A relationship between the maximum projected altitude of the uplifted gas (the `iron radius') and jet power is found with the form R_Fe ∝ P_jet^{0.45}. The estimated outflow rates are typically tens of solar masses per year but exceed 100 M⊙ yr- 1 in the most powerful AGN. The outflow rates are 10-20 per cent of the cooling rates, and thus alone are unable to offset a cooling inflow. Nevertheless, hot outflows effectively redistribute the cooling gas and may play a significant role at regulating star formation and AGN activity in BCGs and presumably in giant elliptical galaxies. The metallicity distribution overall can be complex, perhaps due to metal-rich gas returning in circulation flows or being blown around in the hot atmospheres. Roughly 15 per cent of the work done by the cavities is expended lifting the metal-enriched gas, implying their nuclear black holes have increased in mass by at least ˜107-109 M⊙. Finally, we show that hot outflows can account for the broad, gas-phase metallicity distribution compared to the stellar light profiles of BCGs, and we consider a possible connection between hot outflows and cold molecular gas flows discovered in recent Atacama Large Millimeter Array observations.

  1. High-quality GaN films obtained by air-bridged lateral epitaxial growth

    NASA Astrophysics Data System (ADS)

    Ishibashi, Akihiko; Kidoguchi, Isao; Sugahara, Gaku; Ban, Yuzaburoh

    2000-12-01

    High-quality GaN films with low dislocation density and low wing tilt of c-axis orientation have been successfully obtained by a promising technique of selected area growth, namely air-bridged lateral epitaxial growth (ABLEG). A GaN film was grown from the exposed (0 0 0 1) top facet of the ridged GaN seed structures, whose side walls and etched bottoms were covered with silicon nitride mask, using low-pressure metalorganic vapor-phase epitaxy. The ridge-stripe structures of the GaN seed were constructed in the 1 1¯00 GaN direction. At the optimum growth temperature of 950°C, only the 1 1 2¯ 0 and {0 0 0 1} facets were obtained. Continuing the growth led to fabricating the air-bridged structure, where the coalescence of the wing region occurred. From the transmission electron microscopy study, it was found that most of the vertical dislocations along the c-axis were confined to the seed region, while the horizontal dislocations were newly generated in the vicinity of coalescence boundary. The densities of the vertical dislocations were about 9×10 8 cm -2 in the seed region, while below 1×10 6 cm -2 in other regions. The densities of the horizontal dislocations were about 1×10 6 cm -2 in the wing region and 4×10 7 cm -2 in the vicinity of the coalescence boundary, respectively. The X-ray diffraction (XRD) measurements revealed that the tilt angle of c-axis relative to underlying seed GaN was about 297 arcsec (0.083°), and the full-width at half-maximum of the XRD curve for the wing region was 138 arcsec, indicating that the wing region has high uniformity of c-axis orientation. Both of the wing and the coalescence boundary region exhibited atomically smooth surfaces with stepped terraces, whose root mean square roughness was found to be 0.089 nm by atomic force microscopy measurements.

  2. An experimental investigation of straight and curved annular wall jets

    NASA Technical Reports Server (NTRS)

    Rodman, L. C.; Wood, N. J.; Roberts, L.

    1987-01-01

    Accurate turbulence measurements taken in wall jet flows are difficult to obtain, due to high intensity turbulence and problems in achieving two-dimensionality. The problem is compounded when streamwise curvature of the flow is introduced, since the jet entrainment and turbulence levels are greatly increased over the equivalent planar values. In this experiment, two-dimensional straight and curved incompressible wall jet flows are simulated by having a jet blow axially over a cylinder. Hot wire measurements and some Laser Doppler Velocimetry measurements are presented for straight and curved wall jet flows. The results for the straight wall showed good agreement between the annular flow data and the rectangular data taken by previous researchers. For the jets with streamwise curvature, there was agreement between the annular and corresponding rectangular jets for the flow region closest to the slot exit. An integral analysis was used as a simple technique to interpret the experimental results. Integral momentum calculations were performed for both straight and curved annular and two dimensional wall jets. The results of the calculation were used to identify transverse curvature parameters and to predict the values of those parameters which would delineate the region where the annular flow can satisfactorily simulate two dimensional flow.

  3. Testing hot cell shielding in the fuel conditioning facility.

    PubMed

    Courtney, J C; Klann, R T

    1997-01-01

    A comprehensive shield test program for a hot cell complex, the Fuel Conditioning Facility at Argonne National Laboratory, has been completed with minimum radiation exposure to participants. The recently modified shielding design for two hot cells and their associated transfer paths for irradiated materials was analyzed and tested for attenuating gamma rays from mixed fission product sources. Testing was accomplished using 0.37 TBq (10 Ci) and 518 TBq (14,000 Ci) 60Co sources. Of specific concern were radiation levels around wall penetrations and the interface between transport casks and the cell floor. Detailed measurements were made for surfaces that bound the hot cells, a transfer tunnel between the two cells, and storage pits that extend below the floors of both cells. In addition to surface measurements, dose equivalent rates in adjacent corridors were determined when the larger source was exposed. Results indicate that with some administrative controls, the facility shields are adequate to meet the design criterion that limits annual dose to less than 10 mSv (1 rem) for facility workers.

  4. New insights into a hot environment for early life.

    PubMed

    Dai, Jianghong

    2017-03-09

    Investigating the physical-chemical setting of early life is a challenging task. In this contribution, the author attempted to introduce a provocative concept from cosmology - cosmic microwave background (CMB), which is the residual thermal radiation from a hot early Universe - to the field. For this purpose, the author revisited a recently deduced biomarker, the 1,6-anhydro bond of sugars in bacteria. In vitro, the 1,6-anhydro bond of sugars reflects and captures residual thermal radiation in thermochemical processes and therefore is somewhat analogous to CMB. In vivo, the formation process of the 1,6-anhydro bond of sugars on the peptidoglycan of prokaryotic cell wall is parallel to in vitro processes, suggesting that the 1,6-anhydro bond is an ideal CMB-like analogue that suggests a hot setting for early life. The CMB-like 1,6-anhydro bond is involved in the life cycle of viruses and the metabolism of eukaryotes, underlying this notion. From a novel perspective, the application of the concept of the CMB to microbial ecology may give new insights into a hot environment, such as hydrothermal vents, supporting early life and providing hypotheses to test in molecular palaeontology.

  5. Use Of Lasers At The Los Alamos Hot Cell Facility

    NASA Astrophysics Data System (ADS)

    Lazarus, Michael E.

    1983-11-01

    An optical profilometer that uses a Techmet LaserMike scanning, focused, laser-beam, optical micrometer is installed in a remote alpha-gamma containment cell at the Los Alamos Hot-Cell Facility.1 A hot-cell extension chamber provides the nominal 30-cm (12-in.) working distance required by the LaserMike and, at the same time, keeps the LaserMike components outside the high-radiation-containment environment. This system provides measurement accu-racy better than±5 pm (0.0002 in.) on diameters between 2 and 13 mm (0.08 and 0.5 in.) at a rate of 33 measurements per second. The Hot-Cell Facility also uses a Korad 20-J-output ruby pulsed laser to drill a hole in reactor fuel element cladding to sample fission gas. The laser is then used to reweld the hole so that the fuel element will not be contaminated and may be stored without an alpha-containment barrier. The wall thickness of the fuel elements sampled varies from 0.25 to 0.50 mm (0.010 to 0.020 in.).

  6. Hot Flashes amd Night Sweats (PDQ)

    MedlinePlus

    ... Professionals Questions to Ask about Your Treatment Research Hot Flashes and Night Sweats (PDQ®)–Patient Version Overview ... quality of life in many patients with cancer. Hot flashes and night sweats may be side effects ...

  7. From Hot Flashes to Cool Insights: Menopause

    MedlinePlus

    ... page please turn JavaScript on. Feature: Menopause From Hot Flashes to Cool Insights: Menopause Winter 2017 Table ... experienced the menopausal transition. Researching "the menopause transition" Hot flashes, weight gain, night sweats, insomnia, and moodiness— ...

  8. PCR hot-start using duplex primers.

    PubMed

    Kong, Deming; Shen, Hanxi; Huang, Yanping; Mi, Huaifeng

    2004-02-01

    A new technique of PCR hot-start using duplex primers has been developed which can decrease the undesirable products arising throughout PCR amplification thereby giving better results than a manual hot-start method.

  9. Hot Tub Rash (Pseudomonas Dermatitis/Folliculitis)

    MedlinePlus

    ... Work: Healthy Swimming Policy & Recommendations Fast Facts Healthy Water Sites Healthy Water Drinking Water Healthy Swimming Global ... How is hot tub rash spread at recreational water venues? Hot tub rash can occur if contaminated ...

  10. Calibration of Hot Wire Anemometers. (Latest Citations from the Aerospace Database)

    NASA Technical Reports Server (NTRS)

    1996-01-01

    The bibliography contains citations concerning calibration methods and measurement correction schemes for hot wire anemometers. Coverage includes static and dynamic calibration of sensors having single, multiple, cross, and ring wire configurations. Correction methods to account for yaw angle, low-velocity flow, microgravity, wall proximity, and highly fluctuating turbulence, velocity, or temperature are covered. Correction methods are also referenced for installations having multiple sensors. Hot film and laser anemometers, and the use of anemometers in specific industrial and aerospace applications are extensively covered in separate biblographies. (Contains 50-250 citations and includes a subject term index and title list.)

  11. Acord 1-26 hot, dry well, Roosevelt Hot Springs hot dry rock prospect, Utah

    SciTech Connect

    Shannon, S.S. Jr.; Pettitt, R.; Rowley, J.; Goff, F.; Mathews, M.; Jacobson, J.J.

    1983-08-01

    The Acord 1-26 well is a hot, dry well peripheral to the Roosevelt Hot Springs known geothermal resource area (KGRA) in southwestern Utah. The bottom-hole temperature in this 3854-m-deep well is 230/sup 0/C, and the thermal gradient is 54/sup 0/C/km. The basal 685 m, comprised of biotite monzonite and quartz schist and gneiss, is a likely hot, dry rock (HDR) prospect. The hole was drilled in a structural low within the Milford Valley graben and is separated from the Roosevelt KGRA to the east by the Opal Mound Fault and other basin faults. An interpretation of seismic data approximates the subsurface structure around the well using the lithology in the Acord 1-26 well. The hole was drilled with a minimum of difficulty, and casing was set to 2411 m. From drilling and geophysical logs, it is deduced that the subsurface blocks of crystalline rock in the vicinity of the Acord 1-26 well are tight, dry, shallow, impermeable, and very hot. A hydraulic fracture test of the crystalline rocks below 3170 m is recommended. Various downhole tools and techniques could be tested in promising HDR regimes within the Acord 1-26 well.

  12. Gullies in Crater Wall

    NASA Technical Reports Server (NTRS)

    2004-01-01

    6 April 2004 This Mars Global Surveyor (MGS) Mars Orbiter Camera (MOC) image shows gullies in the wall of a large impact crater in Newton Basin near 41.9oS, 158.1oW. Such gullies may have formed by downslope movement of wet debris--i.e., water. Unfortunately, because the responsible fluid (if there was one) is no longer present today, only the geomorphology of the channels and debris aprons can be used to deduce that water might have been involved. The image covers an area about 3 km (1.9 mi) across. Sunlight illuminates the scene from the upper left.

  13. Extended hot carrier lifetimes observed in bulk In0.265±0.02Ga0.735N under high-density photoexcitation

    NASA Astrophysics Data System (ADS)

    Zhang, Yi; Tayebjee, Murad J. Y.; Smyth, Suntrana; Dvořák, Miroslav; Wen, Xiaoming; Xia, Hongze; Heilmann, Martin; Liao, Yuanxun; Zhang, Zewen; Williamson, Todd; Williams, Joshua; Bremner, Stephen; Shrestha, Santosh; Huang, Shujuan; Schmidt, Timothy W.; Conibeer, Gavin J.

    2016-03-01

    We have investigated the ultrafast carrier dynamics in a 1 μm bulk In0.265Ga0.735N thin film grown using energetic neutral atom-beam lithography/epitaxy molecular beam epitaxy. Cathodoluminescence and X-ray diffraction experiments are used to observe the existence of indium-rich domains in the sample. These domains give rise to a second carrier population and bi-exponential carrier cooling is observed with characteristic lifetimes of 1.6 and 14 ps at a carrier density of 1.3 × 1016 cm-3. A combination of band-filling, screening, and hot-phonon effects gives rise to a two-fold enhanced mono-exponential cooling rate of 28 ps at a carrier density of 8.4 × 1018 cm-3. This is the longest carrier thermalization time observed in bulk InGaN alloys to date.

  14. Heat transfer from a hot rock to water flowing through a crack

    SciTech Connect

    Ogino, Fumimaru; Mukai, Kei; Kamata, Masahiro

    1995-10-01

    Heat transfer between a fluid flowing in a slit and particles packed in it and that between the fluid and the slit wall are important for the extraction off heat from hot dry rocks. Mass-transfer coefficients, instead of the heat-transfer coefficients, on the packed particles in the slit and on the slit wall were measured by making use of the electrochemical method. The results indicate that the mass-transfer coefficient on the particles increases with decreasing void fraction and approaches that in a usual packed bed. The mass-transfer coefficient at the wall increases also with decreasing void fraction. New empirical equations for the mass-transfer coefficients on the packed particles in the slit and on the slit wall are presented.

  15. On the development of turbulent boundary layer with wall transpiration

    NASA Astrophysics Data System (ADS)

    Ferro, Marco; Downs, Robert S., III; Fallenius, Bengt E. G.; Fransson, Jens H. M.

    2015-11-01

    An experimental study of the development of the transpired boundary layer in zero pressure gradient is carried out on a 6.4 m long hydrodynamically smooth and perforated plate. The relatively longer development length of the present perforated plate compared to the ones used in previous studies allows us to investigate whether an asymptotic suction boundary layer with constant thickness is achieved for the turbulent state, analogously to what happens in the laminar state. Velocity profiles are obtained via hot-wire anemometry while the wall shear stress is measured at several streamwise locations with hot-film and wall-wire probes as well as with oil-film interferometry. The threshold suction coefficient above which relaminarization starts to occur is examined. The scaling of the mean velocity and of higher order velocity moments is discussed in light of the measured wall shear stress data. Support from the European Research Council of the Advanced Fluid Research On Drag reduction in Turbulence Experiments (AFRODITE) is acknowledged.

  16. Further Studies Of Hot-Wire Anemometry

    NASA Technical Reports Server (NTRS)

    Mckenzie, Robert; Logan, Pamela; Bershader, Daniel

    1990-01-01

    Report discusses factors affecting readings of hot-wire anemometer in turbulent supersonic boundary layer. Represents extension of work described in "Hot-Wire Anemometry Versus Laser-Induced Fluorescence" (ARC-11802). Presents theoretical analysis of responses of hot-wire probe to changes in flow; also compares measurements by hot-wire probe with measurements of same flows by laser-induced fluorescence (LIF).

  17. OUT Success Stories: Solar Hot Water Technology

    DOE R&D Accomplishments Database

    Clyne, R.

    2000-08-01

    Solar hot water technology was made great strides in the past two decades. Every home, commercial building, and industrial facility requires hot water. DOE has helped to develop reliable and durable solar hot water systems. For industrial applications, the growth potential lies in large-scale systems, using flat-plate and trough-type collectors. Flat-plate collectors are commonly used in residential hot water systems and can be integrated into the architectural design of the building.

  18. Epitaxial ternary nitride thin films prepared by a chemical solution method

    SciTech Connect

    Luo, Hongmei; Feldmann, David M; Wang, Haiyan; Bi, Zhenxing

    2008-01-01

    It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

  19. Growth of (111) GaAs on (111) Si using molecular-beam epitaxy

    NASA Technical Reports Server (NTRS)

    Radhakrishnan, G.; Liu, J.; Grunthaner, F.; Katz, J.; Morkoc, H.

    1988-01-01

    (111) GaAs layers have been grown epitaxially on (111) Si wafers, both on-axis as well as 3-deg off-axis towards the 1 -1 0 direction, using molecular-beam epitaxy. The grown layers have been characterized by scanning electron microscopy, X-ray diffraction, and transmission electron microscopy.

  20. Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer

    SciTech Connect

    Mandal, Krishna C.; Terry, J. Russell

    2016-12-06

    A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12.degree.; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.15 cm.sup.-3 to about 5.times.10.sup.18 cm.sup.-3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.13 cm.sup.-3 to about 5.times.10.sup.15 cm.sup.-3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.