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Sample records for hydrofluoric acid etching

  1. Rolled-Up Nanotech: Illumination-Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers

    NASA Astrophysics Data System (ADS)

    Costescu, Ruxandra M.; Deneke, Christoph; Thurmer, Dominic J.; Schmidt, Oliver G.

    2009-12-01

    The effect of illumination on the hydrofluoric acid etching of AlAs sacrificial layers with systematically varied thicknesses in order to release and roll up InGaAs/GaAs bilayers was studied. For thicknesses of AlAs below 10 nm, there were two etching regimes for the area under illumination: one at low illumination intensities, in which the etching and releasing proceeds as expected and one at higher intensities in which the etching and any releasing are completely suppressed. The “etch suppression” area is well defined by the illumination spot, a feature that can be used to create heterogeneously etched regions with a high degree of control, shown here on patterned samples. Together with the studied self-limitation effect, the technique offers a way to determine the position of rolled-up micro- and nanotubes independently from the predefined lithographic pattern.

  2. Effect of Hydrofluoric Acid Etching Time on Titanium Topography, Chemistry, Wettability, and Cell Adhesion

    PubMed Central

    Zahran, R.; Rosales Leal, J. I.; Rodríguez Valverde, M. A.; Cabrerizo Vílchez, M. A.

    2016-01-01

    Titanium implant surface etching has proven an effective method to enhance cell attachment. Despite the frequent use of hydrofluoric (HF) acid, many questions remain unresolved, including the optimal etching time and its effect on surface and biological properties. The objective of this study was to investigate the effect of HF acid etching time on Ti topography, surface chemistry, wettability, and cell adhesion. These data are useful to design improved acid treatment and obtain an improved cell response. The surface topography, chemistry, dynamic wetting, and cell adhesiveness of polished Ti surfaces were evaluated after treatment with HF acid solution for 0, 2; 3, 5, 7, or 10 min, revealing a time-dependent effect of HF acid on their topography, chemistry, and wetting. Roughness and wetting increased with longer etching time except at 10 min, when roughness increased but wetness decreased. Skewness became negative after etching and kurtosis tended to 3 with longer etching time. Highest cell adhesion was achieved after 5–7 min of etching time. Wetting and cell adhesion were reduced on the highly rough surfaces obtained after 10-min etching time. PMID:27824875

  3. Synthesis of anatase titanium dioxide nanocaps via hydrofluoric acid etching towards enhanced photocatalysis

    SciTech Connect

    Ding, Kun; Wang, Dan; Yang, Ping; Cheng, Xin

    2016-02-15

    Graphical abstract: Anatase TiO{sub 2} nanocaps prepared by HF-assisted chemical etching method exhibit enhanced photocatalytic activity compared with commercial P25 because of HF served as an etching agent to remove doped impurities. - Highlights: • Anatase TiO{sub 2} nanocaps were synthesized by HF etching process. • The optimal conditions of experiment are 700 °C calcination and 0.2 mL HF solution. • The photocatalytic properties was studied upon UV and Visible irradiation. • The unique TiO{sub 2} nanocaps structure shows excellent photocatalytic activity. - Abstract: Anatase titanium dioxide (TiO{sub 2}) nanocaps were created via a four-step process including the preparation of SiO{sub 2} spheres, the deposition of a TiO{sub 2} layer to fabricate SiO{sub 2}@TiO{sub 2} composite spheres, the calcination for obtaining the crystal structure of anatase phase, and hydrofluoric acid (HF) etching to dissolve SiO{sub 2} cores. The SiO{sub 2}@TiO{sub 2} spheres calcined at 700 °C revealed fine photocatalytic activity. Interestingly, most of samples transformed into TiO{sub 2} nanocaps via HF etching, and TiO{sub 2} nanocaps prepared using optimal conditions exhibited quick degradation (k is 0.052 min{sup −1}) compared with commercial P25 (k is 0.030 min{sup −1}) and the TiO{sub 2} nanostructures etched by a NaOH solution. The excellent photocatalytic performance is attributed to its unique hollow hemispherical nanocaps structure, which is in favor of making full use of incident light. The photocatalysis phenomenon in visible light was also observed after depositing Au nanoparticles on anantase TiO{sub 2} nanocaps.

  4. Characterization and adsorption properties of diatomaceous earth modified by hydrofluoric acid etching.

    PubMed

    Tsai, Wen-Tien; Lai, Chi-Wei; Hsien, Kuo-Jong

    2006-05-15

    This work was a study of the chemical modification of diatomaceous earth (DE) using hydrofluoric acid (HF) solution. Under the experimental conditions investigated, it was found that HF under controlled conditions significantly etched inward into the interior of the existing pore structure in the clay mineral due to its high content of silica, leaving a framework possessing a larger BET surface area (ca. 10 m2 g(-1)) in comparison with that (ca. 4 m2 g(-1)) of its precursor (i.e., DE). Further, the results indicated that the HF concentration is a more determining factor in creating more open pores than other process parameters (temperature, holding time, and solid/liquid ratio). This observation was also in close agreement with the examinations by the silicon analysis, scanning electron microscopy, X-ray diffraction, and Fourier transform infrared spectroscopy. The adsorption kinetics and the adsorption isotherm of methylene blue onto the resulting clay adsorbent can be well described by a pseudo-second-order reaction model and the Freundlich model, respectively.

  5. The Effect of Hydrofluoric Acid Etching Duration on the Surface Micromorphology, Roughness, and Wettability of Dental Ceramics

    PubMed Central

    Ramakrishnaiah, Ravikumar; Alkheraif, Abdulaziz A.; Divakar, Darshan Devang; Matinlinna, Jukka P.; Vallittu, Pekka K.

    2016-01-01

    The current laboratory study is evaluating the effect of hydrofluoric acid etching duration on the surface characteristics of five silica-based glass ceramics. Changes in the pore pattern, crystal structure, roughness, and wettability were compared and evaluated. Seventy-five rectangularly shaped specimens were cut from each material (IPS e-max™, Dentsply Celtra™, Vita Suprinity™, Vita mark II™, and Vita Suprinity FC™); the sectioned samples were finished, polished, and ultrasonically cleaned. Specimens were randomly assigned into study groups: control (no etching) and four experimental groups (20, 40, 80 and 160 s of etching). The etched surfaces’ microstructure including crystal structure, pore pattern, pore depth, and pore width was studied under a scanning electron microscope, and the surface roughness and wettability were analyzed using a non-contact surface profilometer and a contact angle measuring device, respectively. The results were statistically analyzed using one-way analysis of variance (ANOVA) and the post hoc Tukey’s test. The results showed a significant change in the pore number, pore pattern, crystal structure, surface roughness, and wettability with increased etching duration. Etching for a short time resulted in small pores, and etching for longer times resulted in wider, irregular grooves. A significant increase in the surface roughness and wettability was observed with an increase in the etching duration. The findings also suggested a strong association between the surface roughness and wettability. PMID:27240353

  6. The Effect of Hydrofluoric Acid Etching Duration on the Surface Micromorphology, Roughness, and Wettability of Dental Ceramics.

    PubMed

    Ramakrishnaiah, Ravikumar; Alkheraif, Abdulaziz A; Divakar, Darshan Devang; Matinlinna, Jukka P; Vallittu, Pekka K

    2016-05-27

    The current laboratory study is evaluating the effect of hydrofluoric acid etching duration on the surface characteristics of five silica-based glass ceramics. Changes in the pore pattern, crystal structure, roughness, and wettability were compared and evaluated. Seventy-five rectangularly shaped specimens were cut from each material (IPS e-max™, Dentsply Celtra™, Vita Suprinity™, Vita mark II™, and Vita Suprinity FC™); the sectioned samples were finished, polished, and ultrasonically cleaned. Specimens were randomly assigned into study groups: control (no etching) and four experimental groups (20, 40, 80 and 160 s of etching). The etched surfaces' microstructure including crystal structure, pore pattern, pore depth, and pore width was studied under a scanning electron microscope, and the surface roughness and wettability were analyzed using a non-contact surface profilometer and a contact angle measuring device, respectively. The results were statistically analyzed using one-way analysis of variance (ANOVA) and the post hoc Tukey's test. The results showed a significant change in the pore number, pore pattern, crystal structure, surface roughness, and wettability with increased etching duration. Etching for a short time resulted in small pores, and etching for longer times resulted in wider, irregular grooves. A significant increase in the surface roughness and wettability was observed with an increase in the etching duration. The findings also suggested a strong association between the surface roughness and wettability.

  7. [Hydrofluoric acid burns].

    PubMed

    Holla, Robin; Gorter, Ramon R; Tenhagen, Mark; Vloemans, A F P M Jos; Breederveld, Roelf S

    2016-01-01

    Hydrofluoric acid is increasingly used as a rust remover and detergent. Dermal contact with hydrofluoric acid results in a chemical burn characterized by severe pain and deep tissue necrosis. It may cause electrolyte imbalances with lethal consequences. It is important to identify high-risk patients. 'High risk' is defined as a total affected body area > 3% or exposure to hydrofluoric acid in a concentration > 50%. We present the cases of three male patients (26, 31, and 39 years old) with hydrofluoric acid burns of varying severity and describe the subsequent treatments. The application of calcium gluconate 2.5% gel to the skin is the cornerstone of the treatment, reducing pain as well as improving wound healing. Nails should be thoroughly inspected and possibly removed if the nail is involved, to ensure proper healing. In high-risk patients, plasma calcium levels should be evaluated and cardiac monitoring is indicated.

  8. Hydrofluoric acid poisoning

    MedlinePlus

    Chemical Emergencies: Case Definition: Hydrofluoric Acid . Centers for Disease Control and Prevention, U.S. Dept of Health and Human Services; 2005. Goldfrank LR, ed. Goldfrank's Toxicologic Emergencies . 8th ed. New York, NY: McGraw Hill; 2006. Wax PM, Young A. ...

  9. Micro-shear bond strength and surface micromorphology of a feldspathic ceramic treated with different cleaning methods after hydrofluoric acid etching

    PubMed Central

    STEINHAUSER, Henrique Caballero; TURSSI, Cecília Pedroso; FRANÇA, Fabiana Mantovani Gomes; do AMARAL, Flávia Lucisano Botelho; BASTING, Roberta Tarkany

    2014-01-01

    Objective The aim of this study was to evaluate the effect of feldspathic ceramic surface cleaning on micro-shear bond strength and ceramic surface morphology. Material and Methods Forty discs of feldspathic ceramic were prepared and etched with 10% hydrofluoric acid for 2 minutes. The discs were randomly distributed into five groups (n=8): C: no treatment, S: water spray + air drying for 1 minute, US: immersion in ultrasonic bath for 5 minutes, F: etching with 37% phosphoric acid for 1 minute, followed by 1-minute rinse, F+US: etching with 37% phosphoric acid for 1 minute, 1-minute rinse and ultrasonic bath for 5 minutes. Composite cylinders were bonded to the discs following application of silane and hydrophobic adhesive for micro-shear bond strength testing in a universal testing machine at 0.5 mm/min crosshead speed until failure. Stereomicroscopy was used to classify failure type. Surface micromorphology of each treatment type was evaluated by scanning electron microscopy at 500 and 2,500 times magnification. Results One-way ANOVA test showed no significant difference between treatments (p=0.3197) and the most common failure types were cohesive resin cohesion followed by adhesive failure. Micro-shear bond strength of the feldspathic ceramic substrate to the adhesive system was not influenced by the different surface cleaning techniques. Absence of or less residue was observed after etching with hydrofluoric acid for the groups US and F+US. Conclusions Combining ceramic cleaning techniques with hydrofluoric acid etching did not affect ceramic bond strength, whereas, when cleaning was associated with ultrasound, less residue was observed. PMID:24676577

  10. Deep Wet Etching in Hydrofluoric Acid, Nitric Acid, and Acetic Acid of Cavities in a Silicon Wafer

    NASA Astrophysics Data System (ADS)

    Yifan, Zhou; Sihai, Chen; Edmond, Samson; Bosseboeuf, Alain

    2013-07-01

    This paper reports an experimental investigation of deep isotropic etching in HF:HNO3:CH3COOH solution for the fabrication of large microcavities in a silicon wafer. The effects of different practical parameters, e.g., back protective layer, etch window diameter and agitation method, are evaluated experimentally and then discussed. Results show that, for the conditions used, the back protective layer has little influence on the etched depth. Experimental etched profiles are in agreement with the mathematical model of Kuiken's assuming a purely diffusion-controlled etching. Vertical anisotropy and asymmetry of etched profiles were observed. A 100 µm deep hemispherical microcavity was obtained for a 60 min etching with magnetic agitation at room temperature.

  11. Corrosion Behavior of Nickel Alloys in Wet Hydrofluoric Acid

    SciTech Connect

    Rebak, R B

    2004-02-06

    Hydrofluoric acid is a water solution of hydrogen fluoride (HF). Hydrofluoric acid is used widely in diverse types of industrial applications; traditionally, it is used in pickling solutions in the metal industry, in the fabrication of chlorofluorocarbon compounds, as an alkylation agent for gasoline and as an etching agent in the industry of glass. In recent years, hydrofluoric acid has extensively been used in the manufacture of semiconductors and microelectronics during the wet chemical cleaning of silicon wafers. Hydrofluoric acid can be considered a reducing acid and although it is chemically classified as weaker than, for example, sulfuric or hydrochloric acids, it is extremely corrosive. This acid is also particularly toxic and poses greater health hazard than most other acids. The corrosion behavior of metals in hydrofluoric acid has not been as systematic studied in the laboratory as for other common inorganic acids. This is largely because tests using hydrofluoric acid cannot be run in standard equipment and because of the toxic nature of this acid. Moreover, short-term weight loss laboratory corrosion tests in hydrofluoric acid can be frustrating since the results are not as highly reproducible as in the case of other acids such as sulfuric or hydrochloric. One of the reasons is because hydrofluoric acid commonly attacks the coupons used for testing in a non-uniform manner. That is, the corrosive power of this acid is not aimed to uniform thinning but mostly to localized penetration below the skin of the metal in the form of thin cracks, voids, pits, trenches and sometimes intergranular attack. Figure 1 shows the cross section of a coupon of Alloy 600 (N06600) exposed for 336 h to the vapor phase of a solution of 20% HF at 93 C. In cases where internal penetration occurs such as in Figure 1, it may not be recommended to use corrosion rates based on weight loss for material selection.

  12. Treating burns caused by hydrofluoric acid.

    PubMed

    Summers, Anthony

    2011-06-01

    Hydrofluoric acid is an ingredient of many common household and industrial solutions. Even seemingly minor burns caused by this acid can have catastrophic effects if they are treated inappropriately or late. This article describes the signs and symptoms, the pathophysiology and the emergency management of hydrofluoric acid burns.

  13. Redox buffered hydrofluoric acid etchant for the reduction of galvanic attack during release etching of MEMS devices having noble material films

    DOEpatents

    Hankins, Matthew G.

    2009-10-06

    Etchant solutions comprising a redox buffer can be used during the release etch step to reduce damage to the structural layers of a MEMS device that has noble material films. A preferred redox buffer comprises a soluble thiophosphoric acid, ester, or salt that maintains the electrochemical potential of the etchant solution at a level that prevents oxidation of the structural material. Therefore, the redox buffer preferentially oxidizes in place of the structural material. The sacrificial redox buffer thereby protects the exposed structural layers while permitting the dissolution of sacrificial oxide layers during the release etch.

  14. A review of hydrofluoric acid burn management

    PubMed Central

    McKee, Daniel; Thoma, Achilleas; Bailey, Kristy; Fish, Joel

    2014-01-01

    Hydrofluoric acid (HF) causes a unique chemical burn. Much of the current treatment knowledge of HF burns is derived from case reports, small case series, animal studies and anecdotal evidence. The management can be challenging because clinical presentation and severity of these burns vary widely. Plastic surgeons managing burn patients must have a basic understanding of the pathophysiology, the range of severity in presentation and the current treatment options available for HF burns. The present article reviews the current understanding of the pathophysiology and systemic effects associated with severe HF burns. Furthermore, it distinguishes between minor and life-threatening HF burns and describes several of the basic techniques that are available to treat patients with HF burns. PMID:25114621

  15. Pediatric poisonings from household products: hydrofluoric acid and methacrylic acid.

    PubMed

    Perry, H E

    2001-04-01

    Household products continue to be a cause of poisoning morbibidity and mortality. Young children frequently are exposed to cleaning products and cosmetics in the course of exploring their environment. Most of these exposures are insignificant, but some result in death or permanent disability. This review discusses two products that have been responsible for serious injury and death in children: hydrofluoric acid and methacrylic acid. It also discusses federal initiatives designed to protect children from these and other household hazards.

  16. 40 CFR 721.4461 - Hydrofluoric acid, reaction products with octane (generic).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Hydrofluoric acid, reaction products... New Uses for Specific Chemical Substances § 721.4461 Hydrofluoric acid, reaction products with octane... identified generically as a hydrofluoric acid, reaction products with octane (PMN P-99-0052) is subject...

  17. 40 CFR 721.4385 - Hydrofluoric acid, reaction products with heptane.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Hydrofluoric acid, reaction products... Specific Chemical Substances § 721.4385 Hydrofluoric acid, reaction products with heptane. (a) Chemical... hydrofluoric acid, reaction products with heptane (PMN P-98-1036; CAS No. 207409-71-0) is subject to...

  18. 40 CFR 721.4461 - Hydrofluoric acid, reaction products with octane (generic).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Hydrofluoric acid, reaction products... New Uses for Specific Chemical Substances § 721.4461 Hydrofluoric acid, reaction products with octane... identified generically as a hydrofluoric acid, reaction products with octane (PMN P-99-0052) is subject...

  19. 40 CFR 721.4461 - Hydrofluoric acid, reaction products with octane (generic).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Hydrofluoric acid, reaction products... New Uses for Specific Chemical Substances § 721.4461 Hydrofluoric acid, reaction products with octane... identified generically as a hydrofluoric acid, reaction products with octane (PMN P-99-0052) is subject...

  20. 40 CFR 721.4385 - Hydrofluoric acid, reaction products with heptane.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Hydrofluoric acid, reaction products... Specific Chemical Substances § 721.4385 Hydrofluoric acid, reaction products with heptane. (a) Chemical... hydrofluoric acid, reaction products with heptane (PMN P-98-1036; CAS No. 207409-71-0) is subject to...

  1. 40 CFR 721.4385 - Hydrofluoric acid, reaction products with heptane.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Hydrofluoric acid, reaction products... Specific Chemical Substances § 721.4385 Hydrofluoric acid, reaction products with heptane. (a) Chemical... hydrofluoric acid, reaction products with heptane (PMN P-98-1036; CAS No. 207409-71-0) is subject to...

  2. 40 CFR 721.4461 - Hydrofluoric acid, reaction products with octane (generic).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Hydrofluoric acid, reaction products... New Uses for Specific Chemical Substances § 721.4461 Hydrofluoric acid, reaction products with octane... identified generically as a hydrofluoric acid, reaction products with octane (PMN P-99-0052) is subject...

  3. 40 CFR 721.4385 - Hydrofluoric acid, reaction products with heptane.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Hydrofluoric acid, reaction products... Specific Chemical Substances § 721.4385 Hydrofluoric acid, reaction products with heptane. (a) Chemical... hydrofluoric acid, reaction products with heptane (PMN P-98-1036; CAS No. 207409-71-0) is subject to...

  4. 40 CFR 721.4461 - Hydrofluoric acid, reaction products with octane (generic).

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Hydrofluoric acid, reaction products... New Uses for Specific Chemical Substances § 721.4461 Hydrofluoric acid, reaction products with octane... identified generically as a hydrofluoric acid, reaction products with octane (PMN P-99-0052) is subject...

  5. 40 CFR 721.4385 - Hydrofluoric acid, reaction products with heptane.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Hydrofluoric acid, reaction products... Specific Chemical Substances § 721.4385 Hydrofluoric acid, reaction products with heptane. (a) Chemical... hydrofluoric acid, reaction products with heptane (PMN P-98-1036; CAS No. 207409-71-0) is subject to...

  6. Hydrofluoric acid-resistant composite window and method for its fabrication

    DOEpatents

    Ostenak, C.A.; Mackay, H.A.

    1985-07-18

    A hydrofluoric acid-resistant composite window and method for its fabrication are disclosed. The composite window comprises a window having first and second sides. The first side is oriented towards an environment containing hydrofluoric acid. An adhesive is applied to the first side. A layer of transparent hydrofluoric acid-resistant material, such as Mylar, is applied to the adhesive and completely covers the first side. The adhesive is then cured.

  7. Fatality due to acute fluoride poisoning following dermal contact with hydrofluoric acid in a palynology laboratory.

    PubMed

    Muriale, L; Lee, E; Genovese, J; Trend, S

    1996-12-01

    A fatal accident involving concentrated hydrofluoric acid in a palynological laboratory is described. Similar deaths due to dermal exposure to concentrated hydrofluoric acid have been reported in the literature. It is evident that rigorous control measures including proper personal protective equipment and first aid are of utmost importance in the prevention of death and injury when handling hydrofluoric acid. Possible factors that may have contributed to the accident are reviewed.

  8. Hydrofluoric acid-resistant composite window and method for its fabrication

    DOEpatents

    Ostenak, Carl A.; Mackay, Harold A.

    1987-01-01

    A hydrofluoric acid-resistant composite window and method for its fabrication are disclosed. The composite window comprises a window having first and second sides. The first side is oriented towards an environment containing hydrofluoric acid. An adhesive is applied to the first side. A layer of transparent hydrofluoric acid-resistant material, such as Mylar, is applied to the adhesive and completely covers the first side. The adhesive is then cured.

  9. Vapor Hydrofluoric Acid Sacrificial Release Technique for Micro Electro Mechanical Systems Using Labware

    NASA Astrophysics Data System (ADS)

    Fukuta, Yamato; Fujita, Hiroyuki; Toshiyoshi, Hiroshi

    2003-06-01

    We have developed a novel technique of sacrificial layer etching for micro electro mechanical systems (MEMS). Our technique uses vapor of hydrofluoric acid (HF) to etch sacrificial silicon oxide and to make freestanding silicon microstructures. The advantages of this technique are: (1) no subsequent water rinse is needed, (2) freestanding silicon microstructures can be successfully released without sticking to the substrate, (3) equipment for our vapor phase HF etching simply consists of Teflon beakers only. Conditions for the technique have been optimized by estimating etching rate with test patterns made of silicon-on-insulator (SOI) wafers and by observing water droplets condensation on the sample surface with thermally oxidized silicon chips. By this technique we have successfully obtained freestanding microstructures of SOI wafers. Microcantilevers of as long as 5000 μm (a 5-μm-wide, 10-μm-thick, and 5000-μm-long cantilever over a 0.6-μm-gap) have been successfully released without adhering to the base substrate or contacting the neighboring cantilevers. We have also fabricated and actuated electrostatic comb-drive actuators of 60 and 200 comb pairs to demonstrate high processing yield of our nonstick releasing technique.

  10. Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects.

    PubMed

    Grant, Nicholas E

    2016-01-04

    A procedure to measure the bulk lifetime (>100 µsec) of silicon wafers by temporarily attaining a very high level of surface passivation when immersing the wafers in hydrofluoric acid (HF) is presented. By this procedure three critical steps are required to attain the bulk lifetime. Firstly, prior to immersing silicon wafers into HF, they are chemically cleaned and subsequently etched in 25% tetramethylammonium hydroxide. Secondly, the chemically treated wafers are then placed into a large plastic container filled with a mixture of HF and hydrochloric acid, and then centered over an inductive coil for photoconductance (PC) measurements. Thirdly, to inhibit surface recombination and measure the bulk lifetime, the wafers are illuminated at 0.2 suns for 1 min using a halogen lamp, the illumination is switched off, and a PC measurement is immediately taken. By this procedure, the characteristics of bulk silicon defects can be accurately determined. Furthermore, it is anticipated that a sensitive RT surface passivation technique will be imperative for examining bulk silicon defects when their concentration is low (<10(12) cm(-3)).

  11. Influence of Fluorine on the Conductivity and Oxidation of Silicon Nanomembranes after Hydrofluoric Acid Treatment

    NASA Astrophysics Data System (ADS)

    Zhao, Xiang-Fu; Han, Ping; Zhang, Rong; Zheng, You-Dou

    2011-08-01

    After immersion in hydrofluoric acid, the sheet resistance of a 220-nm-thick silicon nanomembrane, measured in dry air by van der Pauw method, drops around two orders of magnitude initially, then increases and reaches the level of a sample with a native oxide surface in about one month. The surface component and oxidation rate are also characterized by x-ray photo electronic spectroscopy measurement. Fluorine is found to play a significant role in improving conductivity and has no apparent influence on the oxidation rate after hydrofluoric acid treatment.

  12. Shear bond strength of metal brackets to feldspathic porcelain treated by Nd:YAG laser and hydrofluoric acid.

    PubMed

    Hosseini, Mohammad Hashem; Sobouti, Farhad; Etemadi, Ardavan; Chiniforush, Nasim; Shariati, Mahsa

    2015-02-01

    Adult orthodontic treatment requires bonding orthodontic attachment to dental restorations. Ceramics are commonly used as esthetic restorative materials for the crowns and bridges. The present study evaluated the shear bond strength of metal orthodontic brackets to the feldspathic porcelain surfaces following conditioning by different powers of neodymium-doped yttrium aluminum garnet (Nd:YAG) laser and hydrofluoric acid as a conventional method. Seventy-two glazed porcelain samples were prepared and randomly attributed to six equal groups of 12. In the conventional hydrofluoric (HF) group, the specimens were etched by 9.6% hydrofluoric acid for 4 min. In laser groups, samples were conditioned by 0.75-, 1-, 1.25-, 1.5-, and 2-W Nd:YAG laser for 10 s. Metal brackets were bonded to porcelain samples and after being stored in distilled water for 24 h, they were subjected to thermocycling for 500 cycles. The debonding was carried out by a Zwick testing machine. The data were statistically analyzed by ANOVA and Tamhane multiple comparisons tests. The mean ± SD of the shear bond strength in the laser group 0.75, 1, 1.25, 1.5, and 2 W and HF group was 2.2 ± 0.9, 4.2 ± 1.1, 4.9 ± 2.4, 7 ± 1.7, 9.6 ± 2.7, and 9.4 ± 2.5, respectively. Together with the increased power of laser, the mean shear bond strength was increased continuously and no significant differences were found between the HF group and the laser groups with power of 1.5 or 2 W. Also, there was no significant difference between all test groups in ARI scores. There was no significant difference between bond strength of laser groups with power of 1.5 and 2 W and HF-etched group. So, Nd:YAG laser with appropriate parameters can be used as an alternative method for porcelain etching.

  13. Hydrofluoric Acid Corrosion Study of High-Alloy Materials

    SciTech Connect

    Osborne, P.E.

    2002-09-11

    A corrosion study involving high-alloy materials and concentrated hydrofluoric acid (HF) was conducted in support of the Molten Salt Reactor Experiment Conversion Project (CP). The purpose of the test was to obtain a greater understanding of the corrosion rates of materials of construction currently used in the CP vs those of proposed replacement parts. Results of the study will help formulate a change-out schedule for CP parts. The CP will convert slightly less than 40 kg of {sup 233}U from a gas (UF{sub 6}) sorbed on sodium fluoride pellets to a more stable oxide (U{sub 3}O{sub 8}). One by-product of the conversion is the formation of concentrated HF. Six moles of highly corrosive HF are produced for each mole of UF{sub 6} converted. This acid is particularly corrosive to most metals, elastomers, and silica-containing materials. A common impurity found in {sup 233}U is {sup 232}U. This impurity isotope has several daughters that make the handling of the {sup 233}U difficult. Traps of {sup 233}U may have radiation fields of up to 400 R at contact, a situation that makes the process of changing valves or working on the CP more challenging. It is also for this reason that a comprehensive part change-out schedule must be established. Laboratory experiments involving the repeated transfer of HF through 1/2-in. metal tubing and valves have proven difficult due to the corrosivity of the HF upon contact with all wetted parts. Each batch of HF is approximately 1.5 L of 33 wt% HF and is transferred most often as a vapor under vacuum and at temperatures of up to 250 C. Materials used in the HF side of the CP include Hastelloy C-276 and Monel 400 tubing, Haynes 230 and alloy C-276 vessels, and alloy 400 valve bodies with Inconel (alloy 600) bellows. The chemical compositions of the metals discussed in this report are displayed in Table 1. Of particular concern are the almost 30 vendor-supplied UG valves that have the potential for exposure to HF. These valves have been

  14. Alternate method of source preparation for alpha spectrometry: No electrodeposition, no hydrofluoric acid

    DOE PAGES

    Kurosaki, Hiromu; Mueller, Rebecca J.; Lambert, Susan B.; ...

    2016-07-15

    An alternate method of preparing actinide alpha counting sources was developed in place of electrodeposition or lanthanide fluoride micro-precipitation. The method uses lanthanide hydroxide micro-precipitation to avoid the use of hazardous hydrofluoric acid. Lastly, it provides a quicker, simpler, and safer way of preparing actinide alpha counting sources in routine, production-type laboratories that process many samples daily.

  15. Osteogenic activity of titanium surfaces with hierarchical micro-/nano-structures obtained by hydrofluoric acid treatment.

    PubMed

    Liang, Jianfei; Xu, Shanshan; Shen, Mingming; Cheng, Bingkun; Li, Yongfeng; Liu, Xiangwei; Qin, Dongze; Bellare, Anuj; Kong, Liang

    2017-01-01

    An easier method for constructing the hierarchical micro-/nano-structures on the surface of dental implants in the clinic is needed. In this study, three different titanium surfaces with microscale grooves (width 0.5-1, 1-1.5, and 1.5-2 μm) and nanoscale nanoparticles (diameter 20-30, 30-50, and 50-100 nm, respectively) were obtained by treatment with different concentrations of hydrofluoric acid (HF) and at different etching times (1%, 3 min; 0.5%, 12 min; and 1.5%, 12 min, respectively; denoted as groups HF1, HF2, and HF3). The biological response to the three different titanium surfaces was evaluated by in vitro human bone marrow-derived mesenchymal stem cell (hBMMSC) experiments and in vivo animal experiments. The results showed that cell adhesion, proliferation, alkaline phosphatase activity, and mineralization of hBMMSCs were increased in the HF3 group. After the different surface implants were inserted into the distal femurs of 40 rats, the bone-implant contact in groups HF1, HF2, and HF3 was 33.17%±2.2%, 33.82%±3.42%, and 41.04%±3.08%, respectively. Moreover, the maximal pullout force in groups HF1, HF2, and HF3 was 57.92±2.88, 57.83±4.09, and 67.44±6.14 N, respectively. The results showed that group HF3 with large micron grooves (1.5-2.0 μm) and large nanoparticles (50-100 nm) showed the best bio-functionality for the hBMMSC response and osseointegration in animal experiments compared with other groups.

  16. Osteogenic activity of titanium surfaces with hierarchical micro-/nano-structures obtained by hydrofluoric acid treatment

    PubMed Central

    Liang, Jianfei; Xu, Shanshan; Shen, Mingming; Cheng, Bingkun; Li, Yongfeng; Liu, Xiangwei; Qin, Dongze; Bellare, Anuj; Kong, Liang

    2017-01-01

    An easier method for constructing the hierarchical micro-/nano-structures on the surface of dental implants in the clinic is needed. In this study, three different titanium surfaces with microscale grooves (width 0.5–1, 1–1.5, and 1.5–2 μm) and nanoscale nanoparticles (diameter 20–30, 30–50, and 50–100 nm, respectively) were obtained by treatment with different concentrations of hydrofluoric acid (HF) and at different etching times (1%, 3 min; 0.5%, 12 min; and 1.5%, 12 min, respectively; denoted as groups HF1, HF2, and HF3). The biological response to the three different titanium surfaces was evaluated by in vitro human bone marrow-derived mesenchymal stem cell (hBMMSC) experiments and in vivo animal experiments. The results showed that cell adhesion, proliferation, alkaline phosphatase activity, and mineralization of hBMMSCs were increased in the HF3 group. After the different surface implants were inserted into the distal femurs of 40 rats, the bone–implant contact in groups HF1, HF2, and HF3 was 33.17%±2.2%, 33.82%±3.42%, and 41.04%±3.08%, respectively. Moreover, the maximal pullout force in groups HF1, HF2, and HF3 was 57.92±2.88, 57.83±4.09, and 67.44±6.14 N, respectively. The results showed that group HF3 with large micron grooves (1.5–2.0 μm) and large nanoparticles (50–100 nm) showed the best bio-functionality for the hBMMSC response and osseointegration in animal experiments compared with other groups. PMID:28243092

  17. Topical treatments for hydrofluoric acid dermal burns. Further assessment of efficacy using an experimental piq model.

    PubMed

    Dunn, B J; MacKinnon, M A; Knowlden, N F; Billmaier, D J; Derelanko, M J; Rusch, G M; Naas, D J; Dahlgren, R R

    1996-05-01

    Several topical treatments for hydrofluoric acid dermal burns (Zephiran, calcium acetate and magnesium hydroxide antacid soaks, and calcium gluconate gel) were assessed for efficacy in a pig model. Gross appearance and histopathology of treated and untreated burn sites were evaluated. For superficial burns, Zephiran was most effective; calcium acetate, magnesium hydroxide antacid, and calcium gluconate gel were less effective. For deep burns, gross observations showed that calcium acetate and Zephiran were most efficacious, whereas histopathology indicated comparable efficacy of Zephiran, calcium acetate, and calcium gluconate gel for all skin layers. Magnesium hydroxide antacid demonstrated efficacy only for the subdermis. The clinically beneficial effects of both Zephiran and calcium gluconate gel were affirmed. Although results suggest that calcium acetate and magnesium-containing antacids may be beneficial for human hydrofluoric acid dermal burns, these are not established clinical treatments.

  18. DFT study of the energetic and noncovalent interactions between imidazolium ionic liquids and hydrofluoric acid.

    PubMed

    Velarde, Marco V; Gallo, Marco; Alonso, P A; Miranda, A D; Dominguez, J M

    2015-04-16

    In this work, we evaluated the energetic interactions between imidazolium ionic liquids (ILs) and hydrofluoric acid, as well as the cation-anion interactions in ILs. We used DFT calculations that include dispersion corrections employing the PBE and M06 functionals. We tested 22 ILs, including [C4MIM][PF6], [C4MIM][NTf2], and [C4MIM][CH3COO], obtaining interaction energies in the range of -27 to -13 kcal/mol with the PBE functional. The NCI (noncovalent interaction) index developed by Yang and collaborators ( J. Am. Chem. Soc. 2010 , 132 , 6498 - 6506 ; J. Chem. Theory Comput. 2011 , 7 , 625 - 632 ) also was used for mapping the key noncovalent interactions (hydrogen bonds, van der Waals, and steric repulsions) between the anions and cations of ILs and also for interactions of ILs with hydrofluoric acid (HF). The results obtained show that the anions have a stronger effect with respect to cations in their capacity for interacting with hydrofluoric acid, and the strongest interaction energies occur in systems where the key noncovalent interactions are mainly hydrogen bonds. The [C4MIM][PF6], [C4MIM][NTf2], and [C4MIM][BF4] ionic liquids displayed the weakest cation-anion interactions.

  19. Dissolution of plutonium oxide in nitric acid at high hydrofluoric acid concentrations

    SciTech Connect

    Kazanjian, A.R.; Stevens, J.R.

    1984-06-15

    The dissolution of plutonium dioxide in nitirc acid (HNO/sub 3/) at high hydrofluoric acid (HF) concentrations has been investigated. Dissolution rate curves were obtained using 12M HNO/sub 3/ and HF at concentrations varying from 0.05 to 1.0 molar. The dissolution rate increased with HF concentration up to 0.2M and then decreased at higher concentrations. There was very little plutonium dissolved at 0.7 and 1.0M HF because of the formation of insoluble PuF/sub 4/. Various oxidizing agents were added to 12M HNO/sub 3/-1M HF dissolvent to oxidize Pu(IV) to Pu(VI) and prevent the formation of PuF/sub 4/. Ceric (Ce(IV)) and silver (Ag(II)) ions were the most effective in dissolving PuO/sub 2/. Although these two oxidants greatly increased the dissolution rate, the rates were not as rapid as those obtained with 12M HNO/sub 3/-0.2M HF.

  20. Occupational Hydrofluoric Acid Injury from Car and Truck Washing--Washington State, 2001-2013.

    PubMed

    Reeb-Whitaker, Carolyn K; Eckert, Carly M; Anderson, Naomi J; Bonauto, David K

    2015-08-21

    Exposure to hydrofluoric acid (HF) causes corrosive chemical burns and potentially fatal systemic toxicity. Car and truck wash cleaning products, rust removers, and aluminum brighteners often contain HF because it is efficient in breaking down roadway matter. The death of a truck wash worker from ingestion of an HF-based wash product and 48 occupational HF burn cases associated with car and truck washing in Washington State during 2001-2013 are summarized in this report. Among seven hospitalized workers, two required surgery, and all but one worker returned to the job. Among 48 injured workers, job titles were primarily auto detailer, car wash worker, truck wash worker, and truck driver. Because HF exposure can result in potentially severe health outcomes, efforts to identify less hazardous alternatives to HF-based industrial wash products are warranted.

  1. EXAFS study of the speciation of protactinium(V) in aqueous hydrofluoric acid solutions.

    PubMed

    De Sio, Stéphanie M; Wilson, Richard E

    2014-12-01

    The speciation of protactinium(V) in hydrofluoric acid (HF) solutions was studied using X-ray absorption spectroscopy. Extended X-ray absorption fine structure measurements were performed on an aqueous solution of 0.05 M protactinium(V) with various HF concentrations ranging from 0.5 to 27 M in order to probe the protactinium coordination sphere with respect to the identity and number of coordinating ligands. The resulting fits to the spectra suggest the presence of an eight-coordinate homoleptic fluoro complex in highly concentrated fluoride solutions (27 M), with equilibrium between seven- and eight-coordinate fluoro complexes at moderate acidities, and in more dilute solutions, results indicate that one water molecule is likely to replace a fluoride in the first coordination sphere, at a distance of 2.54-2.57 Å. Comparisons of this chemistry with group V metals, niobium and tantalum, are presented, and the potential implications for these results on the hydrolytic behavior of protactinium in aqueous systems are discussed.

  2. Intra-Arterial Calcium Gluconate Treatment After Hydrofluoric Acid Burn of the Hand

    SciTech Connect

    Thomas, D. Jaeger, U.; Sagoschen, I.; Lamberti, C.; Wilhelm, K.

    2009-01-15

    Hydrofluoric acid (HF) is a colorless corrosive acid used in different industrial branches. Exposure to HF typically results from spills, and most often the hand or fingers are involved. Tissue damage through cutaneous HF exposure occurs through corrosive burns due to the free hydrogen ions and through skin penetration of the fluoride ions, causing a depletion of calcium in the deep tissue layers, ultimately leading to cell death and tissue necrosis. Treatment of HF burns consists of thoroughly flushing the exposed area with water and applying calcium gluconate gel to the skin. If topical treatment does not suffice, subcutaneous injections, as well as intravascular-both intravenous and intra-arterial-calcium gluconate therapy, have been advocated. We report for the first time a case of HF burn of the hand and digits associated with vasospasm. Pain and vasospasm were successfully treated by repeated intra-arterial calcium gluconate injection. We conclude that intra-arterial calcium gluconate injection is a successful and well-tolerated therapy for HF burn associated with Raynaud's syndrome. Intra-arterial injection allows for well-controlled delivery of therapy as well as assessment of the vascular status.

  3. Arsenic contamination of coarse-grained and nanostructured nitinol surfaces induced by chemical treatment in hydrofluoric acid.

    PubMed

    Korotin, D M; Bartkowski, S; Kurmaev, E Z; Borchers, C; Müller, M; Neumann, M; Gunderov, D V; Valiev, R Z; Cholakh, S O

    2012-10-01

    XPS measurements of coarse-grained and nanostructured nitinol (Ni(50.2)Ti(49.8)) before and after chemical treatment in hydrofluoric acid (40% HF, 1 min) are presented. The nanostructured state, providing the excellent mechanical properties of nitinol, is achieved by severe plastic deformation. The near-surface layers of nitinol were studied by XPS depth profiling. According to the obtained results, a chemical treatment in hydrofluoric acid reduces the thickness of the protective TiO(2) oxide layer and induces a nickel release from the nitinol surface and an arsenic contamination, and can therefore not be recommended as conditioning to increase the roughness of NiTi-implants. A detailed evaluation of the resulting toxicological risks is given.

  4. Dermal absorption and skin damage following hydrofluoric acid exposure in an ex vivo human skin model.

    PubMed

    Dennerlein, Kathrin; Kiesewetter, Franklin; Kilo, Sonja; Jäger, Thomas; Göen, Thomas; Korinth, Gintautas; Drexler, Hans

    2016-04-25

    The wide industrial use of hydrofluoric acid (HF) poses a high risk for accidental dermal exposure. Despite local and systemic hazards associated with HF, information on percutaneous penetration and tissue damage is rare. In the present ex vivo study, the dermal absorption of HF (detected in terms of fluoride ions) was quantified and the skin damaging potential as a function of concentration and exposure duration was assessed. Percutaneous penetration of HF (c=5, 30, and 50%) at 3 exposure durations (3, 5, and 10 min) was investigated in a static diffusion cell model using freshly excised human skin. Alterations of skin were histologically evaluated. HF rapidly penetrated through skin under formation of a considerable intradermal reservoir (∼ 13-67% of total absorbed fluoride). Histologically, epidermal alterations were detected already after exposure to 5% HF for 3 min. The degree of skin damage increased with rising concentration and exposure duration leading to coagulation necrosis. For HF concentrations of ≥ 30%, skin damage progressed into deeper skin layers. Topically applied HF concentration was the principal parameter determining HF induced skin effects. The intradermal HF retention capacity associated with progression and prolongation of HF induced skin effects must be considered in the review of skin decontamination procedures.

  5. Characteristics of fluoride in pore-water at accidental hydrofluoric acid spillage site, Gumi, Korea

    NASA Astrophysics Data System (ADS)

    Kwon, E. H.; Lee, H. A.; Lee, J.; Kim, D.; Lee, S.; Yoon, H. O.

    2015-12-01

    A leakage accident of hydrofluoric acid (HF) occurred in Gumi, South Korea at Sep. 2012. The study site is located in the borderline between a large-scale industrial complex and a rural area. The HF plume was made immediately, and moved toward the rural area through air. After the accident, 212 ha of farm land were influenced and most of crops were withered. To recover the soil, CaO was applied after six months. Although several studies have done to estimate the extension and movement of HF plume in the air and to assess the impact on human health or plant after the incident, the long-term fate of fluoride (F) in the affected soils is not identified clearly. Thus, this study aimed to understand the behavior of F in the soil after HF releasing from accident site through chemical analysis and geochemical modeling. Within the radius of 1 km of accident site, 16 pore-water and soil samples were collected. The semi-quantitative soil composition (i.e., Al, Ca, Fe, K, Mg, Mn, Na, P, Si, Ti), total F, total P, OM contents in soil, and soil pH have already been measured, and pore-water compositions are also identified. From these experimental and modeling data, we could be evaluate if impact of accident exists until now, and also could be select and identify existing form of fluoride in soil and pore-water.

  6. Influence of hydrofluoric acid on extraction of thorium using a commercially available extraction chromatographic resin.

    PubMed

    Shimada-Fujiwara, Asako; Hoshi, Akiko; Kameo, Yutaka; Nakashima, Mikio

    2009-05-01

    The dependence of Th recovery on hydrofluoric acid (HF) concentration in nitric acid (HNO(3)) solutions (1-5 mol/dm(3)) containing 1x10(-6) mol/dm(3) of Th and various concentrations of HF and the elution behavior were studied using a commercially available UTEVA (for uranium and tetravalent actinide) resin column. Thorium recovery decreased with an increase in HF concentration in the sample solutions. The concentration of HF at which Th recovery started to decrease was approximately 1x10(-4) mol/dm(3) in 1 mol/dm(3) HNO(3) solution, approximately 1x10(-3) mol/dm(3) in 3 mol/dm(3) HNO(3) solution, and approximately 1x10(-2) mol/dm(3) in 5 mol/dm(3) HNO(3) solution. When Al(NO(3))(3) (0.2 mol/dm(3)) or Fe(NO(3))(3) (0.6 mol/dm(3)) was added as a masking agent for F(-) to the Th solution containing 1x10(-1) mol/dm(3) HF and 1 mol/dm(3) HNO(3), Th recovery improved from 1.4+/-0.3% to 95+/-5% or 93+/-3%. Effective extraction of Th using UTEVA resin was achieved by selecting the concentration of HNO(3) and/or adding masking agents such as Al(NO(3))(3) according to the concentration of HF in the sample solution.

  7. Acute health effects in a community after a release of hydrofluoric acid

    SciTech Connect

    Wing, J.S.; Brender, J.D.; Sanderson, L.M.; Perrotta, D.M.; Beauchamp, R.A. )

    1991-05-01

    {approximately} 3,000 persons were evacuated from a Texas community after 24,036 kg (53,000 lb) of caustic hydrofluoric acid (HF) were released from a nearby petrochemical plant. Emergency room and hospital records of 939 persons who were seen at two area hospitals were reviewed. Most persons who presented at the emergency rooms were female (56%) or black (60%), and their mean age was 33.9 y. The most frequently reported symptoms were eye irritation (41.5%), burning throat (21%), headache (20.6%), and shortness of breath (19.4%). Physical examination results were normal for 49% of the cases; however, irritation of the eyes, nose, throat, skin, and lungs were noted on other exams. Decreased pulmonary function was demonstrated by pulmonary function tests (forced expiratory volume in the first second, less than 80% of predicted value, 42.3%); hypoxemia (pO2 less than 80 mm Hg, 17.4%) and hypocalcemia (less than 8.5 mg/dl, 16.3%) were also noted. Ninety-four (10%) of the cases were hospitalized, and more than 83% of all cases were discharged with a primary diagnosis of HF exposure. There are several reports of individuals who are acutely and chronically exposed to HF; however, we are unaware of other published reports that describe exposure of a community to HF. This incident represented a unique opportunity to study the immediate health impact on a community of residents who were exposed to a hazardous materials release. Results of this analysis suggest that (a) initial health problems should be followed up, (b) any long-term health effects of HF exposure must be assessed, and (c) the health impact on the population at risk should be determined.

  8. Is demineralization with dilute hydrofluoric acid a viable method for isolating mineral stabilized soil organic matter?

    NASA Astrophysics Data System (ADS)

    Sanderman, J.; Baldock, J.; Farrell, M.; Macreadie, P.; McGowan, J.

    2015-12-01

    While you might not be able to dispose of a body with hydrofluoric acid (HF), as fans of Breaking Bad know HF will break silicon-oxygen bonds. These dual properties make HF a powerful tool in investigations of soil organic matter (SOM). When a soil sample is treated with HF, any low molecular weight OM that was bound to mineral surfaces will be released into solution allowing study of the amount and composition of this stable SOM pool. In the work presented here, we take advantage of this property of HF to explore if different forms of SOM are becoming stabilized to mineral surfaces in terrestrial and marine environments. Difference spectra obtained from solid-state 13C NMR spectroscopic analysis of bulk and 10% HF treated soil samples suggest that in aerobic terrestrial environments alkyl-C and aryl-C compounds can dominate the mineral stabilized fraction. However, in anoxic coastal environments this fraction is dominated by O-alkyl C. Demineralization of soil samples with HF is often necessary for removing paramagnetic interferences and concentrating carbon prior to obtaining NMR spectra. The working assumption using dilute HF is that the resultant SOM chemistry determined by NMR spectroscopy has not been significantly biased by the HF treatment process. This assumption has been validated in several studies but also refuted in others. A second goal of this study was to revisit this critical assumption by looking at carbon loss and resulting 13C NMR chemistry from a diverse set of soils and organic materials using HF in 2% and 10% concentrations. We found that 10% HF resulted in slightly greater loss of C than 2% HF but in cases where a preferential shift in chemistry was observed it was observed in both the 2% and 10% treatments. The implications of both of these findings will be discussed in the context of understanding the sources, stability and potential loss mechanisms of mineral stabilized SOM.

  9. Influence of hydrofluoric acid treatment on electroless deposition of Au clusters.

    PubMed

    Milazzo, Rachela G; Mio, Antonio M; D'Arrigo, Giuseppe; Smecca, Emanuele; Alberti, Alessandra; Fisichella, Gabriele; Giannazzo, Filippo; Spinella, Corrado; Rimini, Emanuele

    2017-01-01

    The morphology of gold nanoparticles (AuNPs) deposited on a (100) silicon wafer by simple immersion in a solution containing a metal salt and hydrofluoric acid (HF) is altered by HF treatment both before and after deposition. The gold clusters are characterized by the presence of flat regions and quasispherical particles consistent with the layer-by-layer or island growth modes, respectively. The cleaning procedure, including HF immersion prior to deposition, affects the predominantly occurring gold structures. Flat regions, which are of a few tens of nanometers long, are present after immersion for 10 s. The three-dimensional (3D) clusters are formed after a cleaning procedure of 4 min, which results in a large amount of spherical particles with a diameter of ≈15 nm and in a small percentage of residual square layers of a few nanometers in length. The samples were also treated with HF after the deposition and we found out a general thickening of flat regions, as revealed by TEM and AFM analysis. This result is in contrast to the coalescence observed in similar experiments performed with Ag. It is suggested that the HF dissolves the silicon oxide layer formed on top of the thin flat clusters and promotes the partial atomic rearrangement of the layered gold atoms, driven by a reduction of the surface energy. The X-ray diffraction investigation indicated changes in the crystalline orientation of the flat regions, which partially lose their initially heteroepitaxial relationship with the substrate. A postdeposition HF treatment for almost 70 s has nearly the same effect of long duration, high temperature annealing. The process presented herein could be beneficial to change the spectral response of nanoparticle arrays and to improve the conversion efficiency of hybrid photovoltaic devices.

  10. Influence of hydrofluoric acid treatment on electroless deposition of Au clusters

    PubMed Central

    Mio, Antonio M; D’Arrigo, Giuseppe; Smecca, Emanuele; Alberti, Alessandra; Fisichella, Gabriele; Giannazzo, Filippo; Spinella, Corrado; Rimini, Emanuele

    2017-01-01

    The morphology of gold nanoparticles (AuNPs) deposited on a (100) silicon wafer by simple immersion in a solution containing a metal salt and hydrofluoric acid (HF) is altered by HF treatment both before and after deposition. The gold clusters are characterized by the presence of flat regions and quasispherical particles consistent with the layer-by-layer or island growth modes, respectively. The cleaning procedure, including HF immersion prior to deposition, affects the predominantly occurring gold structures. Flat regions, which are of a few tens of nanometers long, are present after immersion for 10 s. The three-dimensional (3D) clusters are formed after a cleaning procedure of 4 min, which results in a large amount of spherical particles with a diameter of ≈15 nm and in a small percentage of residual square layers of a few nanometers in length. The samples were also treated with HF after the deposition and we found out a general thickening of flat regions, as revealed by TEM and AFM analysis. This result is in contrast to the coalescence observed in similar experiments performed with Ag. It is suggested that the HF dissolves the silicon oxide layer formed on top of the thin flat clusters and promotes the partial atomic rearrangement of the layered gold atoms, driven by a reduction of the surface energy. The X-ray diffraction investigation indicated changes in the crystalline orientation of the flat regions, which partially lose their initially heteroepitaxial relationship with the substrate. A postdeposition HF treatment for almost 70 s has nearly the same effect of long duration, high temperature annealing. The process presented herein could be beneficial to change the spectral response of nanoparticle arrays and to improve the conversion efficiency of hybrid photovoltaic devices. PMID:28243555

  11. In vitro evaluation of microleakage under orthodontic brackets using two different laser etching, self etching and acid etching methods.

    PubMed

    Hamamci, Nihal; Akkurt, Atilim; Başaran, Güvenç

    2010-11-01

    This study evaluated the microleakage of brackets bonded by four different enamel etching techniques. Forty freshly extracted human premolars were divided randomly into four equal groups and received the following treatment: group 1, acid etching; group 2, self-etching primer (SEP); group 3, erbium:yttrium-aluminum-garnet (Er:YAG) laser etching; and group 4, erbium, chromium:yttrium-scandium-gallium-garnet (Er,Cr:YSGG) laser etching. After photopolymerization, the teeth were kept in distilled water for 1 month and then subjected to 500 thermal cycles. Then, the specimens were sealed with nail varnish, stained with 0.5% basic fuchsin for 24 h, sectioned, and examined under a stereomicroscope. In addition, they were scored for marginal microleakage at the adhesive-enamel and bracket-adhesive interfaces from the incisal and gingival margins. Statistical analyses consisted of the Kruskal-Wallis test and the Mann-Whitney U test with Bonferroni correction. Microleakage occurred between the adhesive-enamel and bracket-adhesive interfaces in all groups. For the adhesive-enamel surface, a significant difference was observed between group 1 and groups 2 (P = 0.011), 3 (P = 0.002), and 4 (P = 0.000) on the gingival side. Overall, significant differences were observed between group 1 and groups 3 (P = 0.003) and 4 (P = 0.000). In dental bonding procedures, acid etching was found to result in the least microleakage. Since etching with a laser decreases the risk of caries and is time-saving, it may serve as an alternative to acid etching.

  12. Shear bond strength of resin cement to an acid etched and a laser irradiated ceramic surface

    PubMed Central

    Motro, Pelin Fatma Karagoz; Yurdaguven, Haktan

    2013-01-01

    PURPOSE To evaluate the effects of hydrofluoric acid etching and Er,Cr:YSGG laser irradiation on the shear bond strength of resin cement to lithium disilicate ceramic. MATERIALS AND METHODS Fifty-five ceramic blocks (5 mm × 5 mm × 2 mm) were fabricated and embedded in acrylic resin. Their surfaces were finished with 1000-grit silicon carbide paper. The blocks were assigned to five groups: 1) 9.5% hydrofluoric-acid etching for 60 s; 2-4), 1.5-, 2.5-, and 6-W Er,Cr:YSGG laser applications for 60 seconds, respectively; and 5) no treatment (control). One specimen from each group was examined using scanning electron microscopy. Ceramic primer (Rely X ceramic primer) and adhesive (Adper Single Bond) were applied to the ceramic surfaces, followed by resin cement to bond the composite cylinders, and light curing. Bonded specimens were stored in distilled water at 37℃ for 24 hours. Shear bond strengths were determined by a universal testing machine at 1 mm/min crosshead speed. Data were analyzed using Kruskal-Wallis and Mann-Whitney U-tests (α=0.05). RESULTS Adhesion was significantly stronger in Group 2 (3.88 ± 1.94 MPa) and Group 3 (3.65 ± 1.87 MPa) than in Control group (1.95 ± 1.06 MPa), in which bonding values were lowest (P<.01). No significant difference was observed between Group 4 (3.59 ± 1.19 MPa) and Control group. Shear bond strength was highest in Group 1 (8.42 ± 1.86 MPa; P<.01). CONCLUSION Er,Cr:YSGG laser irradiation at 1.5 and 2.5 W increased shear bond strengths between ceramic and resin cement compared with untreated ceramic surfaces. Irradiation at 6 W may not be an efficient ceramic surface treatment technique. PMID:23755333

  13. Solution of rocks and refractory minerals by acids at high temperatures and pressures. Determination of silica after decomposition with hydrofluoric acid

    USGS Publications Warehouse

    May, I.; Rowe, J.J.

    1965-01-01

    A modified Morey bomb was designed which contains a removable nichromecased 3.5-ml platinium crucible. This bomb is particularly useful for decompositions of refractory samples for micro- and semimicro-analysis. Temperatures of 400-450?? and pressures estimated as great as 6000 p.s.i. were maintained in the bomb for periods as long as 24 h. Complete decompositions of rocks, garnet, beryl, chrysoberyl, phenacite, sapphirine, and kyanite were obtained with hydrofluoric acid or a mixture of hydrofluoric and sulfuric acids; the decomposition of chrome refractory was made with hydrochloric acid. Aluminum-rich samples formed difficultly soluble aluminum fluoride precipitates. Because no volatilization losses occur, silica can be determined on sample solutions by a molybdenum-blue procedure using aluminum(III) to complex interfering fluoride. ?? 1965.

  14. Effect of Acid Etching, Silane and Thermal Cycling on the Bond Strength of Metallic Brackets to Ceramic.

    PubMed

    Matos, Natália Regina Santos de; Costa, Ana Rosa; Valdrighi, Heloísa Cristina; Correr, Américo Bortolazzo; Vedovello, Silvia Amélia; Santamaria, Milton; Correr-Sobrinho, Lourenço

    2016-01-01

    The aim of this study was to evaluate the effect of silanes, thermal cycling and acid etching on the shear bond strength (SBS) of metallic brackets to feldspathic ceramic. Feldspathic ceramic cylinders (Groups 1, 2, 5 and 6) were etched for 60 s with 10% hydrofluoric acid and Groups 3, 4, 7 and 8, without acid etching. Two layers of silane Clearfil Ceramic Primer (CCP, Groups 1 to 4) and two layers of RelyX Ceramic Primer (RCP, groups 5 to 8) were applied and dried for 60 s. Brackets were bonded to the cylinders with Transbond XT and light-activated for 40 s with Bluephase G2. All specimens were stored in deionized water at 37 °C for 24 h, and the specimens of groups 1, 3, 5 and 7 were submitted to 7,000 thermal cycles (5 °C/55 °C). After storage, the SBS test was performed at a crosshead speed of 1 mm/min. Data were subjected to three-way ANOVA and Tukey's post hoc test (α=0.05). The adhesive remnant index (ARI) was evaluated at 8x magnification. The SBS of CCP was significantly greater than of RCP (p<0.05), with or without thermal cycling. Thermal cycling significantly reduced the SBS (p<0.05). The groups submitted to acid etching showed significantly higher SBS than those without acid etching (p<0.05). In conclusion, thermal cycling reduced SBS for all groups. The best ceramic surface treatment for bracket bonding was achieved by acid etching and CCP silane. The ARI results showed predominance of score 0 for all groups.

  15. Comparison of Self-Etch Primers with Conventional Acid Etching System on Orthodontic Brackets

    PubMed Central

    Zope, Amit; Zope-Khalekar, Yogita; Chitko, Shrikant S.; Kerudi, Veerendra V.; Patil, Harshal Ashok; Jaltare, Pratik; Dolas, Siddhesh G

    2016-01-01

    Introduction The self-etching primer system consists of etchant and primer dispersed in a single unit. The etching and priming are merged as a single step leading to fewer stages in bonding procedure and reduction in the number of steps that also reduces the chance of introduction of error, resulting in saving time for the clinician. It also results in smaller extent of enamel decalcification. Aim To compare the Shear Bond Strength (SBS) of orthodontic bracket bonded with Self-Etch Primers (SEP) and conventional acid etching system and to study the surface appearance of teeth after debonding; etching with conventional acid etch and self-etch priming, using stereomicroscope. Materials and Methods Five Groups (n=20) were created randomly from a total of 100 extracted premolars. In a control Group A, etching of enamel was done with 37% phosphoric acid and bonding of stainless steel brackets with Transbond XT (3M Unitek, Monrovia, California). Enamel conditioning in left over four Groups was done with self-etching primers and adhesives as follows: Group B-Transbond Plus (3M Unitek), Group C Xeno V+ (Dentsply), Group D-G-Bond (GC), Group E-One-Coat (Coltene). The Adhesive Remnant Index (ARI) score was also evaluated. Additionally, the surface roughness using profilometer were observed. Results Mean SBS of Group A was 18.26±7.5MPa, Group B was 10.93±4.02MPa, Group C was 6.88±2.91MPa while of Group D was 7.78±4.13MPa and Group E was 10.39±5.22MPa respectively. In conventional group ARI scores shows that over half of the adhesive was remaining on the surface of tooth (score 1 to 3). In self-etching primer groups ARI scores show that there was no or minor amount of adhesive remaining on the surface of tooth (score 4 and 5). SEP produces a lesser surface roughness on the enamel than conventional etching. However, statistical analysis shows significant correlation (p<0.001) of bond strength with surface roughness of enamel. Conclusion All groups might show clinically

  16. Hydrofluoric-nitric-sulphuric-acid surface treatment of tungsten for carbon fibre-reinforced composite hybrids in space applications

    NASA Astrophysics Data System (ADS)

    Kanerva, M.; Johansson, L.-S.; Campbell, J. M.; Revitzer, H.; Sarlin, E.; Brander, T.; Saarela, O.

    2015-02-01

    Hybrid material systems, such as combinations of tungsten foils and carbon fibre-reinforced plastic (CFRP), are replacing metal alloy concepts in spacecraft enclosures. However, a good adhesion between the tungsten oxide scale and the epoxy resin used is required. Here, the effects of a hydrofluoric-nitric-sulphuric-acid (HFNS) treatment on tungsten oxides and subsequent adhesion to CFRP are analysed using atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and fracture testing. The work shows that HFNS treatment results in decreased oxygen content, over 50% thinner tungsten trioxide (WO3) layer and increased nano-roughness on thin tungsten foils. Fracture testing established a 39% increase in the average critical strain for tungsten-CFRP specimens after HFNS treatment was carried out on tungsten. The effect of the oxide scale modification regarding the critical strain energy release rate was ΔGc≈ 8.4 J/m2.

  17. An improved method for the immunological detection of mineral bound protein using hydrofluoric acid and direct capture.

    PubMed

    Craig, O E; Collins, M J

    2000-03-06

    Immunological detection of proteins adsorbed to mineral and ceramic surfaces has proved not only difficult but controversial. Unlike the immunological detection of proteins associated with carbonate or phosphate minerals (e.g. shells and bones) proteins adsorbed to siliceous minerals cannot readily be removed by dissolution of the mineral phase. We have previously examined alternative extraction methodologies which claim to bring the protein into solution, but found none of these to be effective. Here we report a novel strategy for immuno-detection of proteins adsorbed to siliceous minerals, the Digestion and Capture Immunoassay (DACIA). The method involves the use of cold, concentrated (4M) hydrofluoric acid (HF) with the simultaneous capture of liberated protein onto a solid phase. The combination of low temperatures and surface stabilisation enables us to detect epitopes from even partially degraded proteins. The method may have a wide application in forensic, archaeological, soil and earth sciences.

  18. Uniform nano-ripples on the sidewall of silicon carbide micro-hole fabricated by femtosecond laser irradiation and acid etching

    SciTech Connect

    Khuat, Vanthanh; Chen, Tao; Gao, Bo; Si, Jinhai Ma, Yuncan; Hou, Xun

    2014-06-16

    Uniform nano-ripples were observed on the sidewall of micro-holes in silicon carbide fabricated by 800-nm femtosecond laser and chemical selective etching. The morphology of the ripple was analyzed using scanning electronic microscopy. The formation mechanism of the micro-holes was attributed to the chemical reaction of the laser affected zone with mixed solution of hydrofluoric acid and nitric acid. The formation of nano-ripples on the sidewall of the holes could be attributed to the standing wave generated in z direction due to the interference between the incident wave and the reflected wave.

  19. Copper-assisted, anti-reflection etching of silicon surfaces

    DOEpatents

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  20. In Vitro Evaluation of Microleakage Around Orthodontic Brackets Using Laser Etching and Acid Etching Methods

    PubMed Central

    Toodehzaeim, Mohammad Hossein; Yassaei, Sogra; Karandish, Maryam; Farzaneh, Sedigeh

    2014-01-01

    Objective: path of microleakage between the enamel and adhesive potentially allows microbial ingress that may consequently cause enamel decalcification. The aim of this study was to compare microleakage of brackets bonded either by laser or acid etching techniques. Materials and Method: The specimens were 33 extracted premolars that were divided into three groups as the acid etching group (group 1), laser etching with Er:YAG at 100 mJ and 15 Hz for 15s (group 2), and laser etching with Er:YAG at 140 mJ and 15 Hz for 15s (group 3). After photo polymerization, the teeth were subjected to 500 thermal cycles. Then the specimens were sealed with nail varnish, stained with 2% methylen blue for 24hs, sectioned, and examined under a stereomicroscope. They were scored for marginal microleakage that occurred between the adhesive-enamel and bracket-adhesive interfaces from the occlusal and gingival margins. Data were analyzed with the Kruskal- Wallis test. Results: For the adhesive-enamel and bracket-adhesive surfaces, significant differences were not observed between the three groups. Conclusion: According to this study, the Er:YAG laser with 1.5 and 2.1 watt settings may be used as an adjunctive for preparing the surface for orthodontic bracket bonding. PMID:25628661

  1. Effective diffraction gratings via acidic etching of thermally poled glass

    NASA Astrophysics Data System (ADS)

    Kamenskii, A. N.; Reduto, I. V.; Petrikov, V. D.; Lipovskii, A. A.

    2016-12-01

    Relief diffraction gratings are formed via acidic chemical etching of a periodically poled soda-lime glass. The thermal poling under 1000 V DC is performed at 325 °C using a thermally stable glassy-carbon anodic electrode with periodic grooves, the depth of the grooves being of ∼650 nm. Poling-induced modification of the glass results in deepening the glass anodic surface in the regions under the ribs of the anodic electrode due to volume relaxation and in increasing chemical durability of these regions in acidic media comparatively to the virgin glass. Chemical etching of the poled glass in NH4F:8H2O solution allows additional to the thermal poling shaping of the glass surface via faster dissolution of unpoled/less poled glass regions. The morphology of the glass surface before and after the etching is characterized with atomic force and scanning electron microscopy. About 30 min etching provides the formation of ∼0.9 μm in height relief diffraction gratings with the diffraction efficiency close to the theoretically achievable ∼30% for multi-order diffraction. In vivo measuring of the diffraction efficiency in the course of the etching allows precise fabrication of the gratings.

  2. In vitro degradation behavior and biocompatibility of Mg-Nd-Zn-Zr alloy by hydrofluoric acid treatment.

    PubMed

    Mao, Lin; Yuan, Guangyin; Niu, Jialin; Zong, Yang; Ding, Wenjiang

    2013-01-01

    In this paper, Mg-Nd-Zn-Zr alloy (denoted as JDBM) coated with hydrofluoric acid (HF) chemical conversion film (MgF2) was researched as a potential biodegradable cardiovascular stent material. The microstructures, in vitro degradation and biocompatibility were investigated. The field emission scanning electron microscopy (FE-SEM) and X-ray photoelectron spectroscopy (XPS) showed that a compact MgF2 film was formed on the surface of JDBM. The corrosion rate decreased in artificial plasma from 0.337 to 0.253 mm·y(-1) and the electrochemical measurement demonstrated that the corrosion resistance of JDBM alloy could be obviously improved due to the protective MgF2 film on the surface of the substrate. Meanwhile, the hemolysis ratio of JDBM decreased from 52.0% to 10.1% and the cytotoxicity met the requirement of cellular application after HF treatment. In addition, JDBM and MgF2 film showed good anti-platelet adhesion, which is a very favorable property for implant material in contact with blood directly.

  3. Seventy per cent hydrofluoric acid burns: delayed decontamination with hexafluorine® and treatment with calcium gluconate.

    PubMed

    Yoshimura, Carlos Alberto; Mathieu, Laurence; Hall, Alan H; Monteiro, Mário G Kool; de Almeida, Décio Moreira

    2011-01-01

    This is a case report of decontamination and treatment of a 70% hydrofluoric acid (HF) dermal splash injury. A worker was splashed with 70% HF, sustaining approximately 10% TBSA first- to third-degree chemical skin burns of the face, trunk, and left thigh and leg. Initial decontamination involved water rinsing, removal of contaminated clothing, more water rinsing, topical application of magnesium oxide, and administration of intravenous narcotics for management of severe pain. After a delay of approximately 3 hours, active skin washing with Hexafluorine®, 5 L, was performed, followed by intravenous, intradermal perilesional, and topical inunction administration of calcium gluconate. Pain relief and a cooling sensation were quite prompt after Hexafluorine® decontamination. Surgical debridement and skin grafting of the more severe burns were required. No significant systemic toxicity developed, although this has occurred in previously reported similar concentrated HF dermal splash exposure cases, some of which resulted in fatality. While burns did develop, the patient was released from the intensive care service after 2 days and, after skin grafting, had a good outcome at 90-day follow-up. Even after a long delay, decontamination with Hexafluorine® appeared to be beneficial in this case.

  4. Analysis of hydrofluoric acid penetration and decontamination of the eye by means of time-resolved optical coherence tomography.

    PubMed

    Spöler, Felix; Frentz, Markus; Först, Michael; Kurz, Heinrich; Schrage, Norbert F

    2008-06-01

    So far the study of chemical burns has lacked techniques to define penetration kinetics and the effects of decontamination within biological structures. In this study, we aim to demonstrate that high-resolution optical coherence tomography (HR-OCT) can close this gap. Rabbit corneas were exposed ex vivo to 2.5% hydrofluoric acid (HF) solution, and microstructural changes were monitored in the time domain by OCT imaging. HF application and penetration resulted in shrinkage of the corneal thickness, interpreted as a result of osmolar changes and of loss of water-binding capacity, and a substantial increase in OCT signal amplitudes. The effectiveness of different rinsing solutions on the chemical burn was also evaluated. With tap water and with 1% calcium gluconate, the deep corneal stroma remained clear until the end of the rinsing period but became opaque afterwards. With Hexafluorine, the cornea remained clear for 60 min after rinsing ceased. We conclude that HR-OCT can assist in the clinical evaluation of an ex vivo eye irritation test, and that decontamination of an HF burn using Hexafluorine is efficient.

  5. Improvement in etching rate for epilayer lift-off with surfactant

    NASA Astrophysics Data System (ADS)

    Wu, Fan-Lei; Horng, Ray-Hua; Lu, Jian-Heng; Chen, Chun-Li; Kao, Yu-Cheng

    2013-03-01

    In this study, the GaAs epilayer is quickly separated from GaAs substrate by epitaxial lift-off (ELO) process with mixture etchant solution. The HF solution mixes with surfactant as mixture etchant solution to etch AlAs sacrificial layer for the selective wet etching of AlAs sacrificial layer. Addiction surfactants etchant significantly enhance the etching rate in the hydrofluoric acid etching solution. It is because surfactant provides hydrophilicity to change the contact angle with enhances the fluid properties of the mixture etchant between GaAs epilayer and GaAs substrate. Arsine gas was released from the etchant solution because the critical reaction product in semiconductor etching is dissolved arsine gas. Arsine gas forms a bubble, which easily displaces the etchant solution, before the AlAs layer was undercut. The results showed that acetone and hydrofluoric acid ratio of about 1:1 for the fastest etching rate of 13.2 μm / min. The etching rate increases about 4 times compared with pure hydrofluoric acid, moreover can shorten the separation time about 70% of GaAs epilayer with GaAs substrate. The results indicate that etching ratio and stability are improved by mixture etchant solution. It is not only saving the epilayer and the etching solution exposure time, but also reducing the damage to the epilayer structure.

  6. Using hydrofluoric acid for morphological investigations of Zoanthids (Cnidaria: Anthozoa): a critical assessment of methodology and necessity.

    PubMed

    Reimer, James Davis; Nakachi, Shu; Hirose, Mamiko; Hirose, Euichi; Hashiguchi, Shinji

    2010-10-01

    Zoanthids comprise an order of benthic, generally colonial cnidarians, which can usually be distinguished from other hexacorallians by embedded sand and detritus in their mesoglea to help strengthen their structure. These animals are becoming increasingly important research subjects in biochemistry and other research fields. Their inclusion of both calcium and silica results in the need for both decalcification and desilification for internal morphological examinations. Since the methodology of hydrofluoric acid (HF) desilification has rarely been documented in zoanthids, histological surveys for zoanthid taxonomy have often been abandoned and their taxonomy is often problematic. Recent investigations utilizing molecular methods have brought a clearer understanding of zoanthid diversity, but standardization of HF treatments are still needed to provide a link between molecular and more traditional techniques, and to properly examine specimens for which molecular methods may not be an option (e.g., formalin-preserved specimens, etc.). Here, we use both "straight" HF and, for the first time with zoanthids, buffered HF (BHF) treatments at different treatment lengths (1-48 h) on polyps from three different species of zoanthids for histological examination. Section conditions were judged based on the presence/absence of embedded detritus, drag marks, and tissue condition. Results show that the BHF treatment resulted in slightly better tissue conditions for all specimens, and suggest that desilification works well regardless of treatment time for species with smaller (polyp diameter <0.5 cm), less heavily encrusted polyps. Desilification of heavily encrusted Palythoa mutuki polyps were still problematic, with at least 24 h treatment needed. To aid future research, we provide guidelines for HF treatments of zoanthid specimens.

  7. Effects of hydrofluoric acid and anodised micro and micro/nano surface implants on early osseointegration in rats.

    PubMed

    Li, Yongfeng; Gao, Yuan; Shao, Bo; Xiao, Jianrui; Hu, Kaijin; Kong, Liang

    2012-12-01

    Our aim was to evaluate the effects of hydrofluoric acid and anodised micro and micro/nano surface implants on bony ingrowth in the earliest stage of implantation in rats. Sixty cylindrical screwed titanium alloy implants with machined, micro, and hierarchical hybrid micro/nano surfaces (n=20 in each group) were inserted into the distal femurs of 30 female Sprague-Dawley rats. In vivo microcomputed tomography (micro CT) was used to assess microarchitectural changes in the bone around the implants 2 weeks after implantation. All the animals were then killed and the femurs with implants harvested for histological analysis and pull-out testing. Micro CT analysis showed that the trabecular thickness and the bone:volume ratio (bone volume:total volume) (BV:TV) increased significantly in the micro/nano group compared with the other two groups, while the trabecular separation decreased significantly in the micro/nano group compared with the machined group. The mean (SD) bone-implant contacts (%) were 38.94 (9.48), 41.67 (8.71), and 51.49 (12.49) in the machined, micro, and micro/nano groups, respectively. The maximum pull-out forces (N) were 64.95 (6.11), 71.45 (7.15), and 81.90 (13.1), respectively. Both bone-implant contacts and maximum pull-out forces were significantly higher in the micro/nano group, but there was no significant difference between the micro group and the machined group. These data indicate that the hierarchical hybrid micro/nano surface of the implant can promote osseointegration in the earliest stage of implantation, and may be a promising option for further clinical use.

  8. HYDROFLUORIC ACID SCRUBBER SYSTEMS

    SciTech Connect

    PANESKO JV; MERRITT HD

    2011-05-18

    Each year over a million gallons of water are used to scrub hydrogen fluoride (HP) vapors from waste off-gas streams. Use of other potential scrubber solutions such as potassium hydroxide (KOH), aluminum nitrate nonahydrate (ANN), and monobasic aluminum nitrate (monoban) would result in significant volume reductions. A laboratory study was initiated to (1) demonstrate the effectiveness of these scrubber solutions to sorb HF, (2) determine if unexpected reactions occurred at flowsheet conditions, and (3) determine the consequences of deviation from flowsheet conditions. Caustic or aluminum scrubber solutions remove hydrogen fluoride from off-gas streams. Solids which appear with aluminum could be avoided by heating the scrubber solution.

  9. Part 2. Comparison of emergency washing solutions in 70% hydrofluoric acid-burned human skin in an established ex vivo explants model

    PubMed Central

    Burgher, François; Mathieu, Laurence; Lati, Elian; Gasser, Philippe; Peno-Mazzarino, Laurent; Blomet, Joël; Hall, Alan H; Maibach, Howard I

    2011-01-01

    Background: Hydrofluoric acid (HF) is a small and partially dissociated acid (pKa 3.2), able to deeply penetrate into human skin in addition to the corrosiveness of the hydrogen ion (H+) and the toxicity of the fluoride ion (F-). However, there has been a lack of experimental studies to objectively characterize the results of human HF skin exposure decontamination. Methodology/principal findings: A previously established experimental method using a human skin explants ex vivo model (Part 1. Experimental 70% hydrofluoric acid (HF) burns: Histological observations in an established human skin explants ex vivo model) described the lesions that appeared following 70% HF penetration. Within 5min, 70% HF penetrates to the dermis. Using the same experimental conditions, a comparison study of two different washing protocols was performed: water + topical calcium gluconate (CaG) versus Hexafluorine®. In these conditions, washing for 15min with running tap water followed by topical CaG ointment only delayed burn onset, while severe tissue damage appeared later. In contrast, after washing with Hexafluorine® over 10 min, no histological lesions developed. These results are in accordance with the results of accidental human industrial case reports. Conclusion/significance: Amphoteric and hypertonic Hexafluorine® can deactivate H+ and chelate F- ions. Based on these results, it should be considered as a promising first-aid decontamination solution to prevent or minimize significant local and systemic consequences of concentrated HF skin exposures. PMID:21083510

  10. AFM and SEM study of the effects of etching on IPS-Empress 2 TM dental ceramic

    NASA Astrophysics Data System (ADS)

    Luo, X.-P.; Silikas, N.; Allaf, M.; Wilson, N. H. F.; Watts, D. C.

    2001-10-01

    The aim of this study was to investigate the effects of increasing etching time on the surface of the new dental material, IPS-Empress 2 TM glass ceramic. Twenty one IPS-Empress 2 TM glass ceramic samples were made from IPS-Empress 2 TM ingots through lost-wax, hot-pressed ceramic fabrication technology. All samples were highly polished and cleaned ultrasonically for 5 min in acetone before and after etching with 9.6% hydrofluoric acid gel. The etching times were 0, 10, 20, 30, 60, 90 and 120 s respectively. Microstructure was analysed by scanning electron microscopy (SEM) and atomic force microscopy (AFM) was used to evaluate the surface roughness and topography. Observations with SEM showed that etching with hydrofluoric acid resulted in preferential dissolution of glass matrix, and that partially supported crystals within the glass matrix were lost with increasing etching time. AFM measurements indicated that etching increased the surface roughness of the glass-ceramic. A simple least-squares linear regression was used to establish a relationship between surface roughness parameters ( Ra, RMS), and etching time, for which r2>0.94. This study demonstrates the benefits of combining two microscopic methods for a better understanding of the surface. SEM showed the mode of action of hydrofluoric acid on the ceramic and AFM provided valuable data regarding the extent of surface degradation relative to etching time.

  11. Effects of fluoride treatment on phosphoric acid-etching in primary teeth: an AFM observation.

    PubMed

    Choi, Samjin; Rhee, Yeri; Park, Jeong-Hoon; Lee, Gi-Ja; Kim, Kyung-Sook; Park, Jae-Hong; Park, Young-Guk; Park, Hun-Kuk

    2010-07-01

    The aim of this study was to examine the effect of fluoride application on 37% phosphoric acid-etching by atomic force microscopy (AFM) in primary tooth samples based on a clinical protocol used in a pediatric dental hospital. Enamel samples were prepared from 36 exfoliated and non-carious primary teeth. Primary tooth samples were randomly assigned to one of the four groups based on the timing of acid-etching with 37% phosphoric acid after an acidulated phosphate fluoride (APF) pre-treatment. Group 1 received no fluoride application, Group 2 was pre-treated with fluoride and then received acid-etching 2 weeks later. One week separated the fluoride treatment and the acid-etching in Group 3, while Group 4 received acid-etching immediately after the fluoride treatment. The vestibular enamel surfaces of each primary tooth sample were scanned in air at a resolution of 512 x 512 pixels and a scan speed of 0.8 line/s. On the enamel surfaces of the primary teeth after APF pre-treatment, debris were observed although the teeth were smoother than they were prior to APF. As a result, it was concluded that APF treatment is responsible for decreased primary tooth surface roughness. The enamel surfaces etched for 20s showed that acid-etching was effective not only in removing scratches and debris, but also for evaluating enamel rod characteristics. Primary tooth enamel surfaces after etching showed minute structures caused by the decreased hydroxyapatite nanoparticle space, compared to those before etching. Also, acid-etching showed significantly increased roughness effects (p<0.0001, n=9). Finally, as more time elapsed after APF pre-treatment, the roughness was decreased to a lesser degree (p=0.005, n=9). We suggest that primary teeth etching 2 weeks after APF pre-treatment used clinically in pediatric hospitals may be effective to obtain properly etched enamel surfaces.

  12. Determination of vanadium in refractory metals, steel, cast iron, alloys and silicates by extraction of an NBPHA complex from a sulphuric-hydrofluoric acid medium.

    PubMed

    Donaldson, E M

    1970-07-01

    A method for determining up to 0.15% of vanadium in high-purity niobium and tantalum metals, cast iron, steel, non-ferrous alloys and silicates is described. The proposed method is based on the extraction of a red vanadium(V)-N-benzoyl-N-phenylhydroxylamine complex into chloroform from a sulphuric-hydrofluoric acid medium containing excess of ammonium persulphate as oxidant. The molar absorptivity of the complex is 428 l.mole(-1).mm(-5) at 475 nm, the wavelength of maximum absorption. Interference from chromium(VI) and cerium(IV) is eliminated by reduction with iron(II). Common ions, including large amounts of titanium, zirconium, molybdenum and tungsten, do not interfere.

  13. Sulfuric acid-methanol electrolytes as an alternative to sulfuric-hydrofluoric acid mixtures for electropolishing of niobium

    SciTech Connect

    Zhao, Xin; Corcoran, Sean G.; Kelley, Michael J.

    2011-06-01

    Attainment of the greatest possible interior surface smoothness is critical to meeting the performance demands placed upon niobium superconducting radiofrequency (SRF) accelerator cavities by next generation projects. Electropolishing with HF-H{sub 2}SO{sub 4} electrolytes yields cavities that meet SRF performance goals, but a less-hazardous, more environmentally-friendly process is desirable. Reported studies of EP on chemically-similar tantalum describe the use of sulfuric acid-methanol electrolytes as an HF-free alternative. Reported here are the results of experiments on niobium samples with this electrolyte. Voltammetry experiments indicate a current plateau whose voltage range expands with increasing acid concentration and decreasing temperature. Impedance spectroscopy indicates that a compact salt film is responsible for the current plateau. Equivalent findings in electropolishing chemically-similar tantalum with this electrolyte were interpreted due to as mass transfer limitation by diffusion of Ta ions away from the anode surface. We infer that a similar mechanism is at work here. Conditions were found that yield leveling and brightening comparable to that obtained with HF-H{sub 2}SO{sub 4} mixtures.

  14. Fabrication of silicon nanowire arrays by macroscopic galvanic cell-driven metal catalyzed electroless etching in aerated HF solution.

    PubMed

    Liu, Lin; Peng, Kui-Qing; Hu, Ya; Wu, Xiao-Ling; Lee, Shuit-Tong

    2014-03-05

    Macroscopic galvanic cell-driven metal catalyzed electroless etching (MCEE) of silicon in aqueous hydrofluoric acid (HF) solution is devised to fabricate silicon nanowire (SiNW) arrays with dissolved oxygen acting as the one and only oxidizing agent. The key aspect of this strategy is the use of a graphite or other noble metal electrode that is electrically coupled with silicon substrate.

  15. Trace anion determination in concentrated hydrofluoric acid solutions by two-dimensional ion chromatography I. Matrix elimination by ion-exclusion chromatography.

    PubMed

    Vermeiren, Koen

    2005-08-26

    Since years, ion exclusion chromatography (ICE) has been the standard method to separate strong acid analyte anions from concentrated weak acid matrices such as hydrofluoric acid (HF). In this work, the commercially available IonPac ICE-AS 1 column was used to separate trace levels of chloride, nitrate, sulfate and phosphate from HF solutions at 20% (w/w). The efficiency of the separation was studied in more detail using techniques such as ion chromatography (IC), inductively coupled plasma optical emission spectrometry (ICP-OES) and ICP-mass spectrometry (ICP-MS). For 20% (w/w) HF solutions and at a water carrier flow-rate of 0.50 ml/min, the cut window was set from 8.5 to 14.5 min. Under these conditions, analyte recoveries of better than 90% were obtained for chloride, nitrate and sulfate, but only about 75% for phosphate. The HF rejection efficiency was better than 99.9%. It was found that the ICP techniques, measuring total element levels and not species, yielded significantly higher recoveries for phosphorus and sulfur compared to IC. Evidence will be given that part of the added phosphorus (approximately 15% for an addition of 10 mg PO4/kg) is present as mono-fluorophosphoric acid (H2FPO3). In the case of sulfate, the difference between IC and ICP-MS could be attributed to an important matrix effect from the residual HF concentration.

  16. Use of dilute hydrofluoric acid and deep eutectic solvent systems for back end of line cleaning in integrated circuit fabrication

    NASA Astrophysics Data System (ADS)

    Padmanabhan Ramalekshmi Thanu, Dinesh

    Fabrication of current generation integrated circuits involves the creation of multilevel copper/low-k dielectric structures during the back end of line processing. This is done by plasma etching of low-k dielectric layers to form vias and trenches, and this process typically leaves behind polymer-like post etch residues (PER) containing copper oxides, copper fluorides and fluoro carbons, on underlying copper and sidewalls of low-k dielectrics. Effective removal of PER is crucial for achieving good adhesion and low contact resistance in the interconnect structure, and this is accomplished using wet cleaning and rinsing steps. Currently, the removal of PER is carried out using semi-aqueous fluoride based formulations. To reduce the environmental burden and meet the semiconductor industry's environmental health and safety requirements, there is a desire to completely eliminate solvents in the cleaning formulations and explore the use of organic solvent-free formulations. The main objective of this work is to investigate the selective removal of PER over copper and low-k (Coral and Black DiamondRTM) dielectrics using all-aqueous dilute HF (DHF) solutions and choline chloride (CC) -- urea (U) based deep eutectic solvent (DES) system. Initial investigations were performed on plasma oxidized copper films. Copper oxide and copper fluoride based PER films representative of etch products were prepared by ashing g-line and deep UV photoresist films coated on copper in CF4/O2 plasma. PER removal process was characterized using scanning electron microscopy and X-ray photoelectron spectroscopy and verified using electrochemical impedance spectroscopy measurements. A PER removal rate of ~60 A/min was obtained using a 0.2 vol% HF (pH 2.8). Deaeration of DHF solutions improved the selectivity of PER over Cu mainly due to reduced Cu removal rate. A PER/Cu selectivity of ~20:1 was observed in a 0.05 vol% deaerated HF (pH 3). DES systems containing 2:1 U/CC removed PER at a rate of

  17. Bonding durability of single-step adhesives to previously acid-etched dentin.

    PubMed

    Ikeda, Masahiko; Tsubota, Keishi; Takamizawa, Toshiki; Yoshida, Takeshi; Miyazaki, Masashi; Platt, Jeffrey A

    2008-01-01

    This study investigated the effect of phosphoric acid etching on the dentin bond strength of five single-step self-etch adhesive systems; Absolute, Clearfil tri-S Bond, Fluoro Bond Shake One, G-Bond and One-Up Bond F Plus. Bovine mandibular incisors were mounted in self-curing resin and the facial surfaces were wet ground with #600 SiC paper. Adhesives were applied on the prepared dentin surfaces with and without prior phosphoric acid etching and light irradiated. Resin composite was condensed into a mold (ø4x2 mm), light irradiated and stored in water at 37 degrees C. Four groups (n=10) were made per adhesive system: with and without prior acid etching and with and without thermal cycling between 5 degrees C and 55 degrees C for 10,000 cycles. The specimens were tested in a shear mode at a crosshead speed of 1.0 mm/minute. Two-way ANOVA, Student t-test and Tukey HSD test at a level of 0.05 were done. For specimens without prior acid etching, the mean bond strengths to bovine dentin ranged from 12.8 to 17.1 MPa and ranged from 6.7 to 13.3 MPa for specimens with prior acid etching after 24 hours storage in water. When the specimens were subjected to thermal cycling, the mean bond strengths ranged from 10.7 to 24.8 MPa for the specimens without prior acid etching and 4.6 to 13.9 MPa for the specimens with prior acid etching. The changes in dentin bond strength were different among the adhesive systems tested. Failure modes were commonly adhesive failure associated with mixed failure for specimens with prior acid etching. For specimens without prior acid etching, failures in composite and dentin were increased. From the results of this in vitro study, prior acid etching might be not acceptable for increasing the dentin bond strengths of single-step self-etch adhesive systems.

  18. Nanoparticle-based etching of silicon surfaces

    DOEpatents

    Branz, Howard [Boulder, CO; Duda, Anna [Denver, CO; Ginley, David S [Evergreen, CO; Yost, Vernon [Littleton, CO; Meier, Daniel [Atlanta, GA; Ward, James S [Golden, CO

    2011-12-13

    A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

  19. Resin Adaptation of Radicular Dentin Tubules after Endodontic Instrumentation and Acid Etching.

    DTIC Science & Technology

    1983-02-01

    the manuscript. DISCLAIMERS The statements, opinions, and advertisements in the Journal of Endodontics are solely those of the individual authors...I RD-Ai26 872 RESIN ADAPTATION OF RADICULAR DENTIN TUBULES AFTER / I ENDODONTIC INSTRUMENTATION AND ACID ETCHING(U) WALTER I REED ARMY INST OF...Adaptation to Radicular Dentin Tubules SbisoofpeAfter Endodontic Instrumentation and Acid Etching 1982-1983 6. PERFORMING ORG. REPORTNUMBER -, AUTHOR(a) S

  20. Graphene-Assisted Chemical Etching of Silicon Using Anodic Aluminum Oxides as Patterning Templates.

    PubMed

    Kim, Jungkil; Lee, Dae Hun; Kim, Ju Hwan; Choi, Suk-Ho

    2015-11-04

    We first report graphene-assisted chemical etching (GaCE) of silicon by using patterned graphene as an etching catalyst. Chemical-vapor-deposition-grown graphene transferred on a silicon substrate is patterned to a mesh with nanohole arrays by oxygen plasma etching using an anodic- aluminum-oxide etching mask. The prepared graphene mesh/silicon is immersed in a mixture solution of hydrofluoric acid and hydro peroxide with various molecular fractions at optimized temperatures. The silicon underneath graphene mesh is then selectively etched to form aligned nanopillar arrays. The morphology of the nanostructured silicon can be controlled to be smooth or porous depending on the etching conditions. The experimental results are systematically discussed based on possible mechanisms for GaCE of Si.

  1. Effect of prior acid etching on bonding durability of single-step adhesives.

    PubMed

    Watanabe, Takayuki; Tsubota, Keishi; Takamizawa, Toshiki; Kurokawa, Hiroyasu; Rikuta, Akitomo; Ando, Susumu; Miyazaki, Masashi

    2008-01-01

    This study investigated the effect of prior phosphoric acid etching on the enamel bond strength of five single-step self-etch adhesive systems: Absolute, Clearfil tri-S Bond, Fluoro Bond Shake One, G-Bond and One-Up Bond F Plus. Bovine mandibular incisors were mounted in self-curing resin, and the facial surfaces were wet ground with #600 silicon carbide paper. Adhesives were applied to the enamel surfaces with or without prior phosphoric-acid etching and light irradiated. The resin composites were condensed into a mold and light irradiated. In total, 40 specimens were tested per adhesive system with and without prior acid etching and were further divided into two groups: those stored in water at 37 degrees C for 24 hours without cycling and those stored in water at 37 degrees C for 24 hours followed by thermal cycling between 5 degrees C and 55 degrees C with 10,000 repeats. After storage under each set of conditions, the specimens were tested in shear mode at a crosshead speed of 1.0 mm/minute. Two-way analysis of variance, the Student's t-test and the Tukey HSD test were used to analyze the data at a significance level of 0.05. For the specimens without prior acid etching, the mean bond strengths to enamel ranged from 11.0 to 14.6 MPa after 24-hour storage in water, while the corresponding values for specimens with prior acid etching ranged from 15.2 to 19.3 MPa. When these specimens were subjected to thermal cycling, the mean bond strengths ranged from 11.3 to 17.0 MPa without prior acid etching and from 12.3 to 23.2 MPa with prior acid etching. The changes in enamel bond strengths differed among the adhesive systems tested. After 24-hour storage in water, the most common failure modes were adhesive failure and mixed failure for specimens with and without prior acid etching, respectively. Thus, through a careful choice of adhesive system, prior acid etching can increase the bond strengths of single-step self-etch adhesive systems.

  2. Effect of pH, fluoride and hydrofluoric acid concentration on ion release from NiTi wires with various coatings.

    PubMed

    Katic, Visnja; Curkovic, Lidija; Bosnjak, Magdalena Ujevic; Peros, Kristina; Mandic, Davor; Spalj, Stjepan

    2017-03-31

    Aim was to determine effect of pH, fluoride (F(-)) and hydrofluoric acid concentration (HF) on dynamic of nickel (Ni(2+)) and titanium (Ti(4+)) ions release. Nickel-titanium wires with untreated surface (NiTi), rhodium (RhNiTi) and nitride (NNiTi) coating were immersed once a week for five min in remineralizing agents, followed by immersion to artificial saliva. Ion release was recorded after 3, 7, 14, 21 and 28 days. Pearson correlations and linear regression were used for statistical analysis. Release of Ni(2+) from NiTi and NNiTi wires correlated highly linearly positively with HF (r=0.948 and 0.940, respectively); for RhNiTi the correlation was lower and negative (r=-0.605; p<0.05). The prediction of Ti(4+) release was significant for NiTi (r=0.797) and NNiTi (r=0.788; p<0.05) wire. Association with F(-) was lower; for pH it was not significant. HF predicts the release of ions from the NiTi wires better than the pH and F(-) of the prophylactic agents.

  3. Analysis of cationic structure in some room-temperature molten fluorides and dependence of their ionic conductivity and viscosity on hydrofluoric acid concentration.

    PubMed

    Isogai, Tomohiro; Nakai, Takaaki; Inoue, Hidemi; Nakanishi, Kenta; Kohara, Shinji; Saito, Morihiro; Inaba, Minoru; Tasaka, Akimasa

    2011-08-11

    To understand the ionic and nonionic species in (CH(3))(4)NF·mHF, (CH(3))(3)N·mHF, (C(2)H(5))(4)NF·mHF, and (C(2)H(5))(3)N·mHF melts, the structures of these melts were investigated by infrared spectroscopy, NMR, and high-energy X-ray diffraction. Infrared spectra revealed that three kinds of fluorohydrogenate anions, (FH)(n)F(-) (n = 1, 2, and 3), and molecular hydrofluoric acid (HF) are present in every melt. Ionic conductivity and viscosity of these melts were measured and correlated with their cationic structure. The ionic conductivity of the R(4)N(+)-systems was higher than that of corresponding R(3)NH(+)-systems because a strong N-H···F(HF)(n) interaction prevents the motion of R(3)NH(+) cations in the R(3)N·mHF melts. (CH(3))(4)N(+) and (CH(3))(3)NH(+) cations gave higher ionic conductivity than (C(2)H(5))(4)N(+) and (C(2)H(5))(3)NH(+) cations, respectively, because the ionic radii of former cations were smaller than those of latter. It was concluded that these effects on ionic conductivity can be explained by the cationic structure and the concentration of molecular HF in the melts.

  4. Comparative Evaluation of the Etching Pattern of Er,Cr:YSGG & Acid Etching on Extracted Human Teeth-An ESEM Analysis

    PubMed Central

    Mazumdar, Dibyendu; Ranjan, Shashi; Krishna, Naveen Kumar; Kole, Ravindra; Singh, Priyankar; Lakiang, Deirimika; Jayam, Chiranjeevi

    2016-01-01

    Introduction Etching of enamel and dentin surfaces increases the surface area of the substrate for better bonding of the tooth colored restorative materials. Acid etching is the most commonly used method. Recently, hard tissue lasers have been used for this purpose. Aim The aim of the present study was to evaluate and compare the etching pattern of Er,Cr:YSGG and conventional etching on extracted human enamel and dentin specimens. Materials and Methods Total 40 extracted non-diseased teeth were selected, 20 anterior and 20 posterior teeth each for enamel and dentin specimens respectively. The sectioned samples were polished by 400 grit Silicon Carbide (SiC) paper to a thickness of 1.0 ± 0.5 mm. The enamel and dentin specimens were grouped as: GrE1 & GrD1 as control specimens, GrE2 & GrD2 were acid etched and GrE3 & GrD3 were lased. Acid etching was done using Conditioner 36 (37 % phosphoric acid) according to manufacturer instructions. Laser etching was done using Er,Cr:YSGG (Erbium, Chromium : Ytrium Scandium Gallium Garnet) at power settings of 3W, air 70% and water 20%. After surface treatment with assigned agents the specimens were analyzed under ESEM (Environmental Scanning Electron Microscope) at X1000 and X5000 magnification. Results Chi Square and Student “t” statistical analysis was used to compare smear layer removal and etching patterns between GrE2-GrE3. GrD2 and GrD3 were compared for smear layer removal and diameter of dentinal tubule opening using the same statistical analysis. Chi-square test for removal of smear layer in any of the treated surfaces i.e., GrE2-E3 and GrD2-D3 did not differ significantly (p>0.05). While GrE2 showed predominantly type I etching pattern (Chi-square=2.78, 0.05

    0.10) and GrE3 showed type III etching (Chi-square=4.50, p<0.05). The tubule diameters were measured using GSA (Gesellschaft fur Softwareentwicklung und Analytik, Germany) image analyzer and the ‘t’ value of student ‘t’ test was 18.10 which was a

  5. Comparison of shear bond strength of reattached incisor fragment using Er,Cr:YSGG laser etching and conventional acid etching: An in vitro study

    PubMed Central

    Kumar, Gyanendra; Goswami, Mridula; Dhillon, Jatinder Kaur

    2016-01-01

    Aim: The aim of this invitro study is to evaluate the shear bond strength of reattached fractured incisor fragments using Er,Cr:YSGG laser and conventional acid etching without additional tooth preparation. Materials and methods: Forty extracted human teeth were divided in two groups of 20 each (Groups A and B). In Group A, fractured surface was treated by an Er, Cr: YSGG laser system (Waterlase MD, Biolase Technology Inc., San Clemente, CA, USA) operating at a wavelength of 2,780 nm and frequency of 20 Hz. In Group B, fractured surface was etched using 37% phosphoric acid (Scotchbond, 3M). In both the groups, further subdivision with 10 sample each was made based on horizontal and oblique fracture. After laser or acid etching, all the samples were reattached using flowable composite resin and light cured. The samples were tested for shear bond strength. Results: Mean shear bond strength for Group A (94.70±39.158) was lower as compared to Group B (121.25±49.937), although the difference was not statistically significant(p value=0.121). Similarly no statistical significant difference was observed amongst the subgroups. (p>0.05) Conclusion: Er,Cr:YSGG laser etching in reattachment of fractured incisor fragment is a good alternative to conventional acid etching. Er,Cr:YSGG showed comparable efficiency in rebonding of fractured teeth fragment as acid etching. PMID:27721563

  6. Evaluating EDTA as a substitute for phosphoric acid-etching of enamel and dentin.

    PubMed

    Imbery, Terence A; Kennedy, Matthew; Janus, Charles; Moon, Peter C

    2012-01-01

    Matrix metalloproteinases (MMPs) are proteolytic enzymes released when dentin is acid-etched. The enzymes are capable of destroying unprotected collagen fibrils that are not encapsulated by the dentin adhesive. Chlorhexidine applied after etching inhibits the activation of released MMPs, whereas neutral ethylenediamine tetra-acetic acid (EDTA) prevents the release of MMPs. The purpose of this study was to determine if conditioning enamel and dentin with EDTA can be a substitute for treating acid-etching enamel and dentin with chlorhexidine. A column of composite resin was bonded to enamel and dentin after conditioning. Shear bond strengths were evaluated after 48 hours and after accelerated aging for three hours in 12% sodium hypochlorite. Shear bond strengths ranged from 15.6 MP a for accelerated aged EDTA enamel specimens to 26.8 MPa for dentin conditioned with EDTA and tested after 48 hours. A three-way ANOVA and a Tukey HSD test found statistically significant differences among the eight groups and the three independent variables (P < 0.05). EDTA was successfully substituted for phosphoric acid-etched enamel and dentin treated with chlorhexidine. Interactions of conditioning agent and aging were significant for dentin but not for enamel. In an effort to reduce the detrimental effects of MMPs, conditioning enamel and dentin with EDTA is an alternative to treating acid-etched dentin and enamel with chlorhexidine.

  7. The Influence of Composition upon Surface Degradation and Stress Corrosion Cracking of the Ni-Cr-Mo Alloys in Wet Hydrofluoric Acid

    SciTech Connect

    Crook, P; Meck, N S; Rebak, R B

    2006-12-04

    At concentrations below 60%, wet hydrofluoric acid (HF) is extremely corrosive to steels, stainless steels and reactive metals, such as titanium, zirconium, and tantalum. In fact, only a few metallic materials will withstand wet HF at temperatures above ambient. Among these are the nickel-copper (Ni-Cu) and nickel-chromium-molybdenum (Ni-Cr-Mo) alloys. Previous work has shown that, even with these materials, there are complicating factors. For example, under certain conditions, internal attack and stress corrosion cracking (SCC) are possible with the Ni-Cr-Mo alloys, and the Ni-Cu materials can suffer intergranular attack when exposed to wet HF vapors. The purpose of this work was to study further the response of the Ni-Cr-Mo alloys to HF, in particular their external corrosion rates, susceptibility to internal attack and susceptibility to HF-induced SCC, as a function of alloy composition. As a side experiment, one of the alloys was tested in two microstructural conditions, i.e. solution annealed (the usual condition for materials of this type) and long-range ordered (this being a means of strengthening the alloy in question). The study of external corrosion rates over wide ranges of concentration and temperature revealed a strong beneficial influence of molybdenum content. However, tungsten, which is used as a partial replacement for molybdenum in some Ni-Cr-Mo alloys, appears to render the alloys more prone to internal attack. With regard to HF-induced SCC of the Ni-Cr-Mo alloys, this study suggests that only certain alloys (i.e., those containing tungsten) exhibit classical SCC. It was also discovered that high external corrosion rates inhibit HF-induced SCC, presumably due to rapid progression of the external attack front. With regard to the effects of long-range ordering, these were only evident at the highest test temperatures, where the ordered structure exhibited much higher external corrosion rates than the annealed structure.

  8. Interaction between a transition-metal fluoride and a transition-metal hydride: water-mediated hydrofluoric acid evolution following fluoride solvation.

    PubMed

    Chierotti, Michele R; Rossin, Andrea; Gobetto, Roberto; Peruzzini, Maurizio

    2013-11-04

    The reaction between the nickel(II) PCP pincer fluoride complex ((tBu)PCP)Ni(F) [(tBu)PCP = 2,6-C6H3(CH2P(t)Bu2)2] and the tungsten(II) carbonyl hydride CpW(H)(CO)3 (Cp = η(5)-C5H5(-)) leads to hydrofluoric acid evolution and formation of the bimetallic isocarbonylic species [CpW(CO)2(μ-κ,C:κ,O-CO)···Ni((tBu)PCP)]. The process has been monitored through multinuclear ((19)F, (31)P{(1)H}, (1)H) variable-temperature NMR spectroscopy, collecting (19)F T1 data values for a fluoride ligand bound to a transition metal. The extremely short relaxation time (minimum value of 13 ms at 193 K) is ascribed to the large chemical shift anisotropy of the Ni-F bond (688 ppm). The in-depth NMR analysis has revealed that the fluoride-hydride interaction is not direct but water-mediated, at odds with what was previously observed for the "hydride-hydride" case ((tBu)PCP)Ni(H)/CpW(H)(CO)3. Kinetic measurements have unveiled that the first step of the overall mechanism is thought to be solvation of the fluoride ligand (as a result of Ni-F···H2O hydrogen bonding), while further reaction of the solvated fluoride with CpW(H)(CO)3 is extremely slow and competes with the side reaction of fluoride replacement by a water molecule on the nickel center to form the [((tBu)PCP)Ni(H2O)](+) aquo species. Finally, density functional theory analysis of the solvation process through a discrete + continuum model has been accomplished, at the M06//6-31+G(d,p) level of theory, to support the mechanistic hypothesis.

  9. BOND STRENGTH AND MORPHOLOGY OF ENAMEL USING SELF-ETCHING ADHESIVE SYSTEMS WITH DIFFERENT ACIDITIES

    PubMed Central

    Moura, Sandra Kiss; Reis, Alessandra; Pelizzaro, Arlete; Dal-Bianco, Karen; Loguercio, Alessandro Dourado; Arana-Chavez, Victor Elias; Grande, Rosa Helena Miranda

    2009-01-01

    Objectives: To assess the bond strength and the morphology of enamel after application of self-etching adhesive systems with different acidities. The tested hypothesis was that the performance of the self-etching adhesive systems does not vary for the studied parameters. Material and methods: Composite resin (Filtek Z250) buildups were bonded to untreated (prophylaxis) and treated (burcut or SiC-paper) enamel surfaces of third molars after application of four self-etching and two etch-and-rinse adhesive systems (n=6/condition): Clearfil SE Bond (CSE); OptiBond Solo Plus Self-Etch (OP); AdheSe (AD); Tyrian Self Priming Etching (TY), Adper Scotchbond Multi-Purpose Plus (SBMP) and Adper Single Bond (SB). After storage in water (24 h/37°C), the bonded specimens were sectioned into sticks with 0.8 mm2 cross-sectional area and the microtensile bond strength was tested at a crosshead speed of 0.5 mm/min. The mean bond strength values (MPa) were subjected to two-way ANOVA and Tukey's test (α=0.05). The etching patterns of the adhesive systems were also observed with a scanning electron microscope. Results: The main factor adhesive system was statistically significant (p<0.05). The mean bond strength values (MPa) and standard deviations were: CSE (20.5±3.5), OP (11.3±2.3), AD (11.2±2.8), TY (11.1±3.0), SBMP (21.9±4.0) and SB (24.9±3.0). Different etching patterns were observed for the self-etching primers depending on the enamel treatment and the pH of the adhesive system. Conclusion: Although there is a tendency towards using adhesive systems with simplified application procedures, this may compromise the bonding performance of some systems to enamel, even when the prismless enamel is removed. PMID:19668991

  10. Surface characterization of alkali- and heat-treated Ti with or without prior acid etching

    NASA Astrophysics Data System (ADS)

    An, Sang-Hyun; Matsumoto, Takuya; Miyajima, Hiroyuki; Sasaki, Jun-Ichi; Narayanan, Ramaswamy; Kim, Kyo-Han

    2012-03-01

    Titanium and its alloys are used as implant materials in dental and orthopaedic applications. The material affinities to host bone tissue greatly concern with the recovery period and good prognosis. To obtain a material surface having excellent affinity to bone, acid etching prior to alkali- and heat-treatment of Ti was conducted. The surface characteristics of the prepared sample indicated that the roughness as well as the wettability increased by pre-etching. Bone-like apatite was formed on pre-etched, alkali- and heat-treated Ti surface in simulated body fluid (SBF) within 3 days, while it takes 5 days on the solely alkali- and heat-treated surface. Osteoblastic cells showed better compatibility on the per-etched surface compared to the pure Ti surface or alkali- and heat-treated surface. Moreover, the pre-etched surface showed better pull-off tensile adhesion strength against the deposited apatite. Thus, acid etching prior to alkali- and heat-treatment would be a promising method for enhancing the affinity of Ti to host bone tissue.

  11. Grafting of acrylic acid on etched latent tracks induced by swift heavy ions on polypropylene films

    NASA Astrophysics Data System (ADS)

    Mazzei, R.; Fernández, A.; García Bermúdez, G.; Torres, A.; Gutierrez, M. C.; Magni, M.; Celma, G.; Tadey, D.

    2008-06-01

    In order to continue with a systematic study that include different polymers and monomers, the residual active sites produced by heavy ion beams, that remain after the etching process, were used to start the grafting process. To produce tracks, foils of polypropylene (PP) were irradiated with 208Pb of 25.62 MeV/n. Then, these were etched and grafted with acrylic acid (AA) monomers. Experimental curves of grafting yield as a function of grafting time with the etching time as a parameter were measured. Also, the grating yield as a function of the fluence and etching time was obtained. In addition, the permeation of solutions, with different pH, through PP grafted foils was measured.

  12. The effects of acid etching time on surface mechanical properties of dental hard tissues.

    PubMed

    Zafar, Muhammad Sohail; Ahmed, Naseer

    2015-01-01

    The objective of this study was to evaluate the effect of etching time on the surface properties of dental hard tissues including enamel and dentin. For this purpose, samples were prepared using extracted human teeth and treated with 37% phosphoric acid for various length of time using the set protocol. The effects of etching time on surface roughness were assessed using non-contact surface roughness profilometer and surface hardness was measured using nanoindentation technique. All results were analyzed statistically using SPSS computer software. Within the limitation of this study, it was concluded that etching time influences on the surface properties of dental hard tissues particularly the enamel. Enamel surface properties such as roughness and hardness can be altered remarkable as a matter of few seconds. Prolonged etching time than recommended is likely to increase the surface roughness and decrease surface hardness; compromising the bond strength of adhesive materials in clinical applications.

  13. Failure Mechanisms and Interphase Chemistry of Gold Films on Ti6Al4V. Part II. Etching of Ti6Al4V and its Effect on Evaporated Gold and Commercial Adhesive Adhesion.

    DTIC Science & Technology

    1980-01-01

    varying periods of time in aqueous solution of hydrofluoric acid and ammonium phosphate . Following etching, one-half of the specimens were covered with...Observed in Gold Peel Tests Using 19 Commercial Transparent Tape 4 Single Overlap Shear Test Results for Etched Specimens 20 Held in Condensing Steam A...are results from specimens held for 16 hours in condens - ing steam. It can be seen that the trend here is the same as in the gold coated specimens; that

  14. The influence of H2O2 concentration to the structure of silicon nanowire growth by metal-assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Omar, Hafsa; Jani, Abdul Mutalib Md.; Rusop, Mohamad; Abdullah, Saifollah

    2016-07-01

    A simple and low cost method to produce well aligned silicon nanowires at large areas using Ag-assisted chemical etching at room temperature were presented. The structure of silicon nanowires growth by metal-assisted chemical etching was observed. Prior to the etching, the silicon nanowires were prepared by electroless metal deposited (EMD) in solution containing hydrofluoric acid and hydrogen peroxide in Teflon vessel. The silver particle was deposited on substrate by immersion in hydrofluoric acid and silver nitrate solution for sixty second. The silicon nanowires were growth in different hydrogen peroxide concentration which are 0.3M, 0.4M, 0.5M and 0.6M and 0.7M.The influence of hydrogen peroxide concentration to the formation of silicon nanowires was studied. The morphological properties of silicon nanowires were investigated using field emission scanning electron microscopy (FESEM) and Energy Dispersive X-Ray Spectroscopy (EDS).

  15. Characterization of Group V Dubnium Homologs on DGA Extraction Chromatography Resin from Nitric and Hydrofluoric Acid Matrices

    SciTech Connect

    Despotopulos, J D; Sudowe, R

    2012-02-21

    somewhere between Nb and Pa. Much more recent studies have examined the properties of Db from HNO{sub 3}/HF matrices, and suggest Db forms complexes similar to those of Pa. Very little experimental work into the behavior of element 114 has been performed. Thermochromatography experiments of three atoms of element 114 indicate that the element 114 is at least as volatile as Hg, At, and element 112. Lead was shown to deposit on gold at temperatures about 1000 C higher than the atoms of element 114. Results indicate a substantially increased stability of element 114. No liquid phase studies of element 114 or its homologs (Pb, Sn, Ge) or pseudo-homologs (Hg, Cd) have been performed. Theoretical predictions indicate that element 114 is should have a much more stable +2 oxidation state and neutral state than Pb, which would result in element 114 being less reactive and less metallic than Pb. The relativistic effects on the 7p{sub 1/2} electrons are predicted to cause a diagonal relationship to be introduced into the periodic table. Therefore, 114{sup 2+} is expected to behave as if it were somewhere between Hg{sup 2+}, Cd{sup 2+}, and Pb{sup 2+}. In this work two commercially available extraction chromatography resins are evaluated, one for the separation of Db homologs and pseudo?homologs from each other as well as from potential interfering elements such as Group IV Rf homologs and actinides, and the other for separation of element 114 homologs. One resin, Eichrom's DGA resin, contains a N,N,N',N'-tetra-n-octyldiglycolamide extractant, which separates analytes based on both size and charge characteristics of the solvated metal species, coated on an inert support. The DGA resin was examined for Db chemical systems, and shows a high degree of selectivity for tri-, tetra-, and hexavalent metal ions in multiple acid matrices with fast kinetics. The other resin, Eichrom's Pb resin, contains a di-t-butylcyclohexano 18-crown-6 extractant with isodecanol solvent, which separates

  16. Effect of acid etching of glass ionomer cement surface on the microleakage of sandwich restorations.

    PubMed

    Bona, Alvaro Della; Pinzetta, Caroline; Rosa, Vinícius

    2007-06-01

    The purposes of this study were to evaluate the sealing ability of different glass ionomer cements (GICs) used for sandwich restorations and to assess the effect of acid etching of GIC on microleakage at GIC-resin composite interface. Forty cavities were prepared on the proximal surfaces of 20 permanent human premolars (2 cavities per tooth), assigned to 4 groups (n=10) and restored as follows: Group CIE - conventional GIC (CI) was applied onto the axial and cervical cavity walls, allowed setting for 5 min and acid etched (E) along the cavity margins with 35% phosphoric acid for 15 s, washed for 30 s and water was blotted; the adhesive system was applied and light cured for 10 s, completing the restoration with composite resin light cured for 40 s; Group CIN - same as Group CIE, except for acid etching of the CI surface; Group RME - same as CIE, but using a resin modified GIC (RMGIC); Group RMN - same as Group RME, except for acid etching of the RMGIC surface. Specimens were soaked in 1% methylene blue dye solution at 24 degrees C for 24 h, rinsed under running water for 1 h, bisected longitudinally and dye penetration was measured following the ISO/TS 11405-2003 standard. Results were statistically analyzed by Kruskal-Wallis and chi-square tests (a=0.05). Dye penetration scores were as follow: CIE - 2.5; CIN - 2.5; RME - 0.9; and RMN - 0.6. The results suggest that phosphoric acid etching of GIC prior to the placement of composite resin does not improve the sealing ability of sandwich restorations. The RMGIC was more effective in preventing dye penetration at the GIC-resin composite-dentin interfaces than CI.

  17. Metal etching composition

    NASA Technical Reports Server (NTRS)

    Otousa, Joseph E. (Inventor); Thomas, Clark S. (Inventor); Foster, Robert E. (Inventor)

    1991-01-01

    The present invention is directed to a chemical etching composition for etching metals or metallic alloys. The composition includes a solution of hydrochloric acid, phosphoric acid, ethylene glycol, and an oxidizing agent. The etching composition is particularly useful for etching metal surfaces in preparation for subsequent fluorescent penetrant inspection.

  18. Formation of nanostructured silicon surfaces by stain etching.

    PubMed

    Ayat, Maha; Belhousse, Samia; Boarino, Luca; Gabouze, Noureddine; Boukherroub, Rabah; Kechouane, Mohamed

    2014-01-01

    In this work, we report the fabrication of ordered silicon structures by chemical etching of silicon in vanadium oxide (V2O5)/hydrofluoric acid (HF) solution. The effects of the different etching parameters including the solution concentration, temperature, and the presence of metal catalyst film deposition (Pd) on the morphologies and reflective properties of the etched Si surfaces were studied. Scanning electron microscopy (SEM) was carried out to explore the morphologies of the etched surfaces with and without the presence of catalyst. In this case, the attack on the surfaces with a palladium deposit begins by creating uniform circular pores on silicon in which we distinguish the formation of pyramidal structures of silicon. Fourier transform infrared spectroscopy (FTIR) demonstrates that the surfaces are H-terminated. A UV-Vis-NIR spectrophotometer was used to study the reflectance of the structures obtained. A reflectance of 2.21% from the etched Si surfaces in the wavelength range of 400 to 1,000 nm was obtained after 120 min of etching while it is of 4.33% from the Pd/Si surfaces etched for 15 min.

  19. Formation of nanostructured silicon surfaces by stain etching

    PubMed Central

    2014-01-01

    In this work, we report the fabrication of ordered silicon structures by chemical etching of silicon in vanadium oxide (V2O5)/hydrofluoric acid (HF) solution. The effects of the different etching parameters including the solution concentration, temperature, and the presence of metal catalyst film deposition (Pd) on the morphologies and reflective properties of the etched Si surfaces were studied. Scanning electron microscopy (SEM) was carried out to explore the morphologies of the etched surfaces with and without the presence of catalyst. In this case, the attack on the surfaces with a palladium deposit begins by creating uniform circular pores on silicon in which we distinguish the formation of pyramidal structures of silicon. Fourier transform infrared spectroscopy (FTIR) demonstrates that the surfaces are H-terminated. A UV-Vis-NIR spectrophotometer was used to study the reflectance of the structures obtained. A reflectance of 2.21% from the etched Si surfaces in the wavelength range of 400 to 1,000 nm was obtained after 120 min of etching while it is of 4.33% from the Pd/Si surfaces etched for 15 min. PMID:25435830

  20. Miniature tapered photonic crystal fiber interferometer with enhanced sensitivity by acid microdroplets etching.

    PubMed

    Qiu, Sun-jie; Chen, Ye; Kou, Jun-long; Xu, Fei; Lu, Yan-qing

    2011-08-01

    We fabricate a miniature tapered photonic crystal fiber (PCF) interferometer with enhanced sensitivity by acid microdroplets etching. This method is very simple and cost effective, avoiding elongating the PCF, moving and refixing the device during etching, and measuring. The refractive index sensing properties with different PCF diameters are investigated both theoretically and experimentally. The tapering velocity can be controlled by the microdroplet size and position. The sensitivity greatly increases (five times, 750 nm/RIU) and the size decreases after slightly tapering the PCF. The device keeps low temperature dependence before and after tapering. More uniformly and thinly tapered PCFs can be realized with higher sensitivity (∼100 times) by optimizing the etching process.

  1. Temperature Rise Induced by Light Curing Unit Can Shorten Enamel Acid-Etching Time

    PubMed Central

    Najafi Abrandabadi, Ahmad; Sheikh-Al-Eslamian, Seyedeh Mahsa; Panahandeh, Narges

    2015-01-01

    Objectives: The aim of this in-vitro study was to assess the thermal effect of light emitting diode (LED) light curing unit on the enamel etching time. Materials and Methods: Three treatment groups with 15 enamel specimens each were used in this study: G1: Fifteen seconds of etching, G2: Five seconds of etching, G3: Five seconds of etching plus LED light irradiation (simultaneously). The micro shear bond strength (μSBS) of composite resin to enamel was measured. Results: The mean μSBS values ± standard deviation were 51.28±2.35, 40.47±2.75 and 50.00±2.59 MPa in groups 1, 2 and 3, respectively. There was a significant difference between groups 1 and 2 (P=0.013) and between groups 2 and 3 (P=0.032) in this respect, while there was no difference between groups 1 and 3 (P=0.932). Conclusion: Simultaneous application of phosphoric acid gel over enamel surface and light irradiation using a LED light curing unit decreased enamel etching time to five seconds without compromising the μSBS. PMID:27559352

  2. Acid-etched microtexture for enhancement of bone growth into porous-coated implants.

    PubMed

    Hacking, S A; Harvey, E J; Tanzer, M; Krygier, J J; Bobyn, J D

    2003-11-01

    We designed an in vivo study to determine if the superimposition of a microtexture on the surface of sintered titanium beads affected the extent of bone ingrowth. Cylindrical titanium intramedullary implants were coated with titanium beads to form a porous finish using commercial sintering techniques. A control group of implants was left in the as-sintered condition. The test group was etched in a boiling acidic solution to create an irregular surface over the entire porous coating. Six experimental dogs underwent simultaneous bilateral femoral intramedullary implantation of a control implant and an acid etched implant. At 12 weeks, the implants were harvested in situ and the femora processed for undecalcified, histological examination. Eight transverse serial sections for each implant were analysed by backscattered electron microscopy and the extent of bone ingrowth was quantified by computer-aided image analysis. The extent of bone ingrowth into the control implants was 15.8% while the extent of bone ingrowth into the etched implants was 25.3%, a difference of 60% that was statistically significant. These results are consistent with other research that documents the positive effect of microtextured surfaces on bone formation at an implant surface. The acid etching process developed for this study represents a simple method for enhancing the potential of commonly available porous coatings for biological fixation.

  3. Chemically Etched Open Tubular and Monolithic Emitters for Nanoelectrospray Ionization Mass Spectrometry

    SciTech Connect

    Kelly, Ryan T.; Page, Jason S.; Luo, Quanzhou; Moore, Ronald J.; Orton, Daniel J.; Tang, Keqi; Smith, Richard D.

    2006-11-15

    We have developed a new procedure for fabricating fused silica emitters for electrospray ionization-mass spectrometry (ESI-MS) in which the end of a bare fused silica capillary is immersed into aqueous hydrofluoric acid, and water is pumped through the capillary to prevent etching of the interior. Surface tension causes the etchant to climb the capillary exterior, and the etch rate in the resulting meniscus decreases as a function of distance from the bulk solution. Etching continues until the silica touching the hydrofluoric acid reservoir is completely removed, essentially stopping the etch process. The resulting emitters have no internal taper, making them much less prone to clogging compared to e.g. pulled emitters. The high aspect ratios and extremely thin walls at the orifice facilitate very low flow rate operation; stable ESI-MS signals were obtained for model analytes from 5-μm-diameter emitters at a flow rate of 5 nL/min with a high degree of inter-emitter reproducibility. In extensive evaluation, the etched emitters were found to enable approximately four times as many LC-MS analyses of proteomic samples before failing compared with conventional pulled emitters. The fabrication procedure was also employed to taper the ends of polymer monolith-containing silica capillaries for use as ESI emitters. In contrast to previous work, the monolithic material protrudes beyond the fused silica capillaries, improving the monolith-assisted electrospray process.

  4. Fabrication of tapered single mode fiber by chemical etching and used as a chemical sensor based on evanescent field absorption

    NASA Astrophysics Data System (ADS)

    Gangopadhyay, Tarun K.; Halder, A.; Das, S.; Paul, M. C.; Pal, M.; Salza, M.; Gagliardi, G.

    2010-12-01

    Single mode tapered fiber (SMTF) has been fabricated with core diameter of 8 μm and reduced cladding diameter up to 11 μm by hydrofluoric acid (HF) etching technique. To obtain the required cladding diameter, the time of etching has been optimized by using different HF concentrations. The mechanism as well as kinetics path of etching reaction on standard optical fiber is discussed. This study is related to surface catalyzed dissociation of HF followed by direct reaction with adsorbate molecules and the surface silicon oxide molecules. The etched tapered fibers are then packaged on quartz substrate to use as sensor element. Finally, the etched fiber is used as an element within chemical sensor based on evanescent field absorption. In this experiment, a 419-ppm cobalt nitrate solution is used for sensing.

  5. Effect of EDTA and Phosphoric Acid Pretreatment on the Bonding Effectiveness of Self-Etch Adhesives to Ground Enamel

    PubMed Central

    Ibrahim, Ihab M.; Elkassas, Dina W.; Yousry, Mai M.

    2010-01-01

    Objectives: This in vitro study determined the effect of enamel pretreatment with phosphoric acid and ethylenediaminetetraacetic acid (EDTA) on the bond strength of strong, intermediary strong, and mild self-etching adhesive systems. Methods: Ninety sound human premolars were used. Resin composite cylinders were bonded to flat ground enamel surfaces using three self-etching adhesive systems: strong Adper Prompt L-Pop (pH=0.9–1.0), intermediary strong AdheSE (pH=1.6–1.7), and mild Frog (pH=2). Adhesive systems were applied either according to manufacturer instructions (control) or after pretreatment with either phosphoric acid or EDTA (n=10). After 24 hours, shear bond strength was tested using a universal testing machine at a cross-head speed of 0.5 mm/minute. Ultra-morphological characterization of the surface topography and resin/enamel interfaces as well as representative fractured enamel specimens were examined using scanning electron microscopy (SEM). Results: Neither surface pretreatment statistically increased the mean shear bond strength values of either the strong or the intermediary strong self-etching adhesive systems. However, phosphoric acid pretreatment significantly increased the mean shear bond strength values of the mild self-etching adhesive system. SEM examination of enamel surface topography showed that phosphoric acid pretreatment deepened the same etching pattern of the strong and intermediary strong adhesive systems but converted the irregular etching pattern of the mild self-etching adhesive system to a regular etching pattern. SEM examination of the resin/enamel interface revealed that deepening of the etching pattern was consistent with increase in the length of resin tags. EDTA pretreatment had a negligible effect on ultra-morphological features. Conclusions: Use of phosphoric acid pretreatment can be beneficial with mild self-etching adhesive systems for bonding to enamel. PMID:20922162

  6. In vitro short-term bonding performance of zirconia treated with hot acid etching and primer conditioning etching and primer conditioning.

    PubMed

    Xie, Haifeng; Chen, Chen; Dai, Wenyong; Chen, Gang; Zhang, Feimin

    2013-01-01

    This study aimed to investigate and compare the resin bond strengths of zirconia conditioned as follows: alumina sandblasting; alumina sandblasting+application of 10-MDP-containing primer; alumina sandblasting+application of Z-Prime Plus or Metal/Zirconia Primer (new zirconia primers); tribochemical silica coating+silanization; hot acid etching in three different combinations [H2SO4/(NH4)2SO4, HF/HNO3, H2SO4/HF/HNO3]+application of 10-MDP-containing primer. Shear bond strengths (SBS) after water storage for 24 h and 40 days were measured to assess resin bonding performance. Surface and chemical properties of conditioned zirconia surfaces and primers were characterized using scanning electron microscopy, energy dispersive X-ray spectrometry, Fourier transform infrared spectroscopy, and atomic force microscopy. Surface roughness ranked in descending order was: hot acid etching > tribochemical silica coating > alumina sandblasting. Combination of tribochemical silica coating and silanization showed the highest initial SBS (12.46±2.13 MPa) (P<0.01). Etching with H2SO4/(NH4)2SO4 (13.15±3.24 MPa) and HF/HNO3 (13.48±2.15 MPa) showed significantly better bond durability (P<0.01). Hot acid etching seemed to be a promising surface roughening treatment to improve resin-zirconia bonding.

  7. Hydrogen content in titanium and a titanium-zirconium alloy after acid etching.

    PubMed

    Frank, Matthias J; Walter, Martin S; Lyngstadaas, S Petter; Wintermantel, Erich; Haugen, Håvard J

    2013-04-01

    Dental implant alloys made from titanium and zirconium are known for their high mechanical strength, fracture toughness and corrosion resistance in comparison with commercially pure titanium. The aim of the study was to investigate possible differences in the surface chemistry and/or surface topography of titanium and titanium-zirconium surfaces after sand blasting and acid etching. The two surfaces were compared by X-ray photoelectron spectroscopy, secondary ion mass spectroscopy, scanning electron microscopy and profilometry. The 1.9 times greater surface hydrogen concentration of titanium zirconium compared to titanium was found to be the major difference between the two materials. Zirconium appeared to enhance hydride formation on titanium alloys when etched in acid. Surface topography revealed significant differences on the micro and nanoscale. Surface roughness was increased significantly (p<0.01) on the titanium-zirconium alloy. High-resolution images showed nanostructures only present on titanium zirconium.

  8. Effect of acid etching on bond strength of nanoionomer as an orthodontic bonding adhesive

    PubMed Central

    Khan, Saba; Verma, Sanjeev K.; Maheshwari, Sandhya

    2015-01-01

    Aims: A new Resin Modified Glass Ionomer Cement known as nanoionomer containing nanofillers of fluoroaluminosilicate glass and nanofiller 'clusters' has been introduced. An in-vitro study aimed at evaluating shear bond strength (SBS) and adhesive remnant index (ARI) of nanoionomer under etching/unetched condition for use as an orthodontic bonding agent. Material and Methods: A total of 75 extracted premolars were used, which were divided into three equal groups of 25 each: 1-Conventional adhesive (Enlight Light Cure, SDS, Ormco, CA, USA) was used after and etching with 37% phosphoric acid for 30 s, followed by Ortho Solo application 2-nanoionomer (Ketac™ N100, 3M, ESPE, St. Paul, MN, USA) was used after etching with 37% phosphoric acid for 30 s 3-nanoionomer was used without etching. The SBS testing was performed using a digital universal testing machine (UTM-G-410B, Shanta Engineering). Evaluation of ARI was done using scanning electron microscopy. The SBS were compared using ANOVA with post-hoc Tukey test for intergroup comparisons and ARI scores were compared with Chi-square test. Results: ANOVA (SBS, F = 104.75) and Chi-square (ARI, Chi-square = 30.71) tests revealed significant differences between groups (P < 0.01). The mean (SD) SBS achieved with conventional light cure adhesive was significantly higher (P < 0.05) (10.59 ± 2.03 Mpa, 95% CI, 9.74-11.41) than the nanoionomer groups (unetched 4.13 ± 0.88 Mpa, 95% CI, 3.79-4.47 and etched 9.32 ± 1.87 Mpa, 95% CI, 8.58-10.06). However, nanoionomer with etching, registered SBS in the clinically acceptable range of 5.9–7.8 MPa, as suggested by Reynolds (1975). The nanoionomer groups gave significantly lower ARI values than the conventional adhesive group. Conclusion: Based on this in-vitro study, nanoionomer with etching can be successfully used as an orthodontic bonding agent leaving less adhesive remnant on enamel surface, making cleaning easier. However, in-vivo studies are needed to confirm the validity

  9. Uniform vertical trench etching on silicon with high aspect ratio by metal-assisted chemical etching using nanoporous catalysts.

    PubMed

    Li, Liyi; Liu, Yan; Zhao, Xueying; Lin, Ziyin; Wong, Ching-Ping

    2014-01-08

    Recently, metal-assisted chemical etching (MaCE) has been proposed as a promising wet-etching method for the fabrication of micro- and nanostructures on silicon with low cost. However, uniform vertical trench etching with high aspect ratio is still of great challenge for traditional MaCE. Here we report an innovated MaCE method, which combined the use of a nanoporous gold thin film as the catalyst and a hydrofluoric acid (HF)-hydrogen peroxide (H2O2) mixture solution with a low HF-to-H2O2 concentration ratio (ρ) as the etchant. The reported method successfully fabricated vertical trenches on silicon with a width down to 2 μm and an aspect ratio of 16. The geometry of the trenches was highly uniform throughout the 3D space. The vertical etching direction was favored on both (100)- and (111)-oriented silicon substrates. The reported method was also capable of producing multiple trenches on the same substrate with individually-tunable lateral geometry. An etching mechanism including a through-catalyst mass-transport process and an electropolishing-favored charge-transport process was identified by a comparative study. The novel method fundamentally solves the problems of distortion and random movement of isolated catalysts in MaCE. The results mark a breakthrough in high-quality silicon trench-etching technology with a cost of more than 2 orders of magnitude lower than that of the currently available methods.

  10. Effects of laser and acid etching and air abrasion on mineral content of dentin.

    PubMed

    Malkoc, Meral Arslan; Taşdemir, Serife Tuba; Ozturk, A Nilgun; Ozturk, Bora; Berk, Gizem

    2011-01-01

    The aim of this study was to evaluate the mineral content of dentin prepared using an Er,Cr:YSGG laser at four different power settings, acid etching, and air abrasion. The study teeth comprised 35 molars which were randomly divided into seven equal groups. The occlusal third of the crowns were cut with a slow-speed diamond saw. The groups were as follows: group A, control group; group B, dentin etched with 35% buffered phosphoric acid for 30 s; group C, dentin abraded at 60 psi with 50-µm aluminium oxide for 1 s; groups D-G, dentin irradiated with the Er,Cr:YSGG laser at 1.50 W (group D), 2.25 W (group E), 3.00 W (group F), and 3.50 W (group G). The levels of Mg, P, Ca, K and Na in each dentin slab were measured by inductively coupled plasma-atomic emission spectrometry (ICP-AES). Data were analysed by one way analysis of variance and Tukey HSD tests. There were no significant differences between the groups in the levels of Ca, P and Na, and the Ca/P ratio (p>0.05); however, there were significant differences in the levels of K (p<0.001) and Mg (p=0.13). In addition, the levels of Mg in the air abrasion group were higher than in the other groups (p<0.01). Etching with the Er,Cr:YSGG laser system, air abrasion and acid etching did not affect the levels of Ca, P and Na, or the Ca/P ratio, in the dentin surface.

  11. Effect of acid-etching on remineralization of enamel white spot lesions.

    PubMed

    Al-Khateeb, S; Exterkate, R; Angmar-Månsson, B; ten Cate, J M; ten Cate, B

    2000-02-01

    This in vitro study aimed at investigating whether full remineralization would occur in white spot lesions when the surface porosity was increased by acid-etching. The effect of fluoride was also investigated. Enamel blocks with in vitro produced white spot lesions were used. Group A was exposed to a remineralizing solution only. In group B, the lesions were etched with 35% phosphoric acid for 30 s, then treated as in group A. Group C was treated as group A + daily treatment with a fluoride toothpaste slurry (1,000 ppm) for 5 min. Group D was treated as group B + the daily fluoride treatment of group C. The remineralization was measured weekly with Quantitative Light-induced Fluorescence during the experimental period. After 10 weeks of remineralization, mineral profiles were assessed with transverse microradiography. The enamel fluorescence was partly regained. There were significant differences in the lesion depth, mineral content at the surface layer, and integrated mineral loss between the groups. Addition of fluoride accelerated the remineralization only in the beginning; in later stages the process leveled out and even reached a plateau in all the groups. It was concluded that full remineralization was not achieved by etching, by the addition of fluoride, nor by the combination of both treatments in this in vitro study.

  12. Investigation of acid-etched CO2 laser ablated enamel surfaces using polarization sensitive optical coherence tomography

    NASA Astrophysics Data System (ADS)

    Nahm, Byung J.; Kang, Hobin; Chan, Kenneth; Fried, Daniel

    2012-01-01

    A carbon dioxide laser operating at the highly absorbed wavelength of 9.3μm with a pulse duration of 10-15μs is ideally suited for caries removal and caries prevention. The enamel thermally modified by the laser has enhanced resistance to acid dissolution. This is an obvious advantage for caries prevention; however, it is often necessary to etch the enamel surface to increase adhesion to composite restorative materials and such surfaces may be more resistant to etching. The purpose of the study was to non-destructively measure the susceptibility of laser-ablated enamel surfaces to acid dissolution before and after acid-etching using Polarization Sensitive Optical Coherence Tomography (PS-OCT). PS-OCT was used to acquire images of bovine enamel surfaces after exposure to laser irradiation at ablative fluence, acid-etching, and a surface softened dissolution model. The integrated reflectivity from lesion and the lesion depth were measured using PS-OCT. Samples were also sectioned for examination by Polarized Light Microscopy (PLM). PS-OCT images showed that acid-etching greatly accelerated the formation of subsurface lesions on both laser-irradiated and non-irradiated surfaces (P<0.05). A 37.5% phosphoric acid etch removed the laser modified enamel layer after 5-10 seconds.

  13. Micro/nanofabrication of poly(L-lactic acid) using focused ion beam direct etching

    NASA Astrophysics Data System (ADS)

    Oyama, Tomoko Gowa; Hinata, Toru; Nagasawa, Naotsugu; Oshima, Akihiro; Washio, Masakazu; Tagawa, Seiichi; Taguchi, Mitsumasa

    2013-10-01

    Micro/nanofabrication of biocompatible and biodegradable poly(L-lactic acid) (PLLA) using focused Ga ion beam direct etching was evaluated for future bio-device applications. The fabrication performance was determined with different ion fluences and fluxes (beam currents), and it was found that the etching speed and fabrication accuracy were affected by irradiation-induced heat. Focused ion beam (FIB)-irradiated surfaces were analyzed using micro-area X-ray photoelectron spectroscopy. Owing to reactions such as the physical sputtering of atoms and radiation-induced decomposition, PLLA was gradually carbonized with increasing C=C bonds. Controlled micro/nanostructures of PLLA were fabricated with C=C bond-rich surfaces expected to have good cell attachment properties.

  14. Shear bond strength and debonding characteristics of metal and ceramic brackets bonded with conventional acid-etch and self-etch primer systems: An in-vivo study

    PubMed Central

    Mirzakouchaki, Behnam; Sharghi, Reza; Shirazi, Samaneh; Moghimi, Mahsan; Shahrbaf, Shirin

    2016-01-01

    Background Different in-vitro studies have reported various results regarding shear bond strength (SBS) of orthodontic brackets when SEP technique is compared to conventional system. This in-vivo study was designed to compare the effect of conventional acid-etching and self-etching primer adhesive (SEP) systems on SBS and debonding characteristics of metal and ceramic orthodontic brackets. Material and Methods 120 intact first maxillary and mandibular premolars of 30 orthodontic patients were selected and bonded with metal and ceramic brackets using conventional acid-etch or self-etch primer system. The bonded brackets were incorporated into the wire during the study period to simulate the real orthodontic treatment condition. The teeth were extracted and debonded after 30 days. The SBS, debonding characteristics and adhesive remnant indices (ARI) were determined in all groups. Results The mean SBS of metal brackets was 10.63±1.42 MPa in conventional and 9.38±1.53 MPa in SEP system, (P=0.004). No statistically significant difference was noted between conventional and SEP systems in ceramic brackets. The frequency of 1, 2 and 3 ARI scores and debonding within the adhesive were the most common among all groups. No statistically significant difference was observed regarding ARI or failure mode of debonded specimens in different brackets or bonding systems. Conclusions The SBS of metal brackets bonded using conventional system was significantly higher than SEP system, although the SBS of SEP system was clinically acceptable. No significant difference was found between conventional and SEP systems used with ceramic brackets. Total SBS of metal brackets was significantly higher than ceramic brackets. Due to adequate SBS of SEP system in bonding the metal brackets, it can be used as an alternative for conventional system. Key words:Shear bond strength, Orthodontic brackets, Adhesive remnant index, self-etch. PMID:26855704

  15. Influence of pH, bleaching agents, and acid etching on surface wear of bovine enamel

    PubMed Central

    Soares, Ana Flávia; Bombonatti, Juliana Fraga Soares; Alencar, Marina Studart; Consolmagno, Elaine Cristina; Honório, Heitor Marques; Mondelli, Rafael Francisco Lia

    2016-01-01

    ABSTRACT Development of new materials for tooth bleaching justifies the need for studies to evaluate the changes in the enamel surface caused by different bleaching protocols. Objective The aim of this study was to evaluate the bovine dental enamel wear in function of different bleaching gel protocols, acid etching and pH variation. Material and Methods Sixty fragments of bovine teeth were cut, obtaining a control and test areas. In the test area, one half received etching followed by a bleaching gel application, and the other half, only the bleaching gel. The fragments were randomly divided into six groups (n=10), each one received one bleaching session with five hydrogen peroxide gel applications of 8 min, activated with hybrid light, diode laser/blue LED (HL) or diode laser/violet LED (VHL) (experimental): Control (C); 35% Total Blanc Office (TBO35HL); 35% Lase Peroxide Sensy (LPS35HL); 25% Lase Peroxide Sensy II (LPS25HL); 15% Lase Peroxide Lite (LPL15HL); and 10% hydrogen peroxide (experimental) (EXP10VHL). pH values were determined by a pHmeter at the initial and final time periods. Specimens were stored, subjected to simulated brushing cycles, and the superficial wear was determined (μm). ANOVA and Tukey´s tests were applied (α=0.05). Results The pH showed a slight decrease, except for Group LPL15HL. Group LPS25HL showed the highest degree of wear, with and without etching. Conclusion There was a decrease from the initial to the final pH. Different bleaching gels were able to increase the surface wear values after simulated brushing. Acid etching before bleaching increased surface wear values in all groups. PMID:27008254

  16. Influence of previous acid etching on bond strength of universal adhesives to enamel and dentin.

    PubMed

    Torres, Carlos Rocha Gomes; Zanatta, Rayssa Ferreira; Silva, Tatiane Josefa; Huhtala, Maria Filomena Rocha Lima; Borges, Alessandra Bühler

    2017-01-01

    The objective of this study was to evaluate the effect of acid pretreatment on the bond strength of composite resin bonded to enamel and dentin with 2 different universal self-etching adhesives. The null hypothesis was that the acid treatment performed prior to adhesive application would not significantly change the bond strength to enamel or dentin for either universal adhesive tested. A sample of 112 bovine incisors were selected and embedded in acrylic resin. Half were ground until a flat enamel surface was obtained, and the other half were polished until a 6 × 6-mm area of dentin was exposed, resulting into 2 groups (n = 56). The enamel and dentin groups were divided into 2 subgroups according to the adhesive system applied: Futurabond U or Scotchbond Universal. Each of these subgroups was divided into 2 additional subgroups (n = 14); 1 subgroup received phosphoric acid pretreatment, and 1 subgroup did not. The bond strength was assessed with a microtensile test. Data from enamel and dentin specimens were analyzed separately using 1-way analysis of variance. The acid pretreatment did not significantly change the bond strength of the adhesives tested, either to enamel (P = 0.4161) or to dentin (P = 0.4857). The acid etching pretreatment did not affect the bond strength to dentin and enamel when the tested universal multipurpose adhesive systems were used.

  17. Oxidation and etching behaviors of the InAs surface in various acidic and basic chemical solutions

    NASA Astrophysics Data System (ADS)

    Na, Jihoon; Lee, Seunghyo; Lim, Sangwoo

    2017-04-01

    Indium arsenide (InAs) is the candidate of choice as a new channel material for application in future technologies beyond the Si-based electronic devices because it has a much higher electron mobility than silicon. In this study, the oxidation and etching behaviors of InAs (100) in various acidic and basic solutions, such as HF, HCl, H2SO4, NaOH, KOH, and NH4OH, were investigated. In addition, the effect of pH on the oxidation and etching reactions taking place on the InAs surface was studied using solutions with a pH ranging from 1 to 13. It was observed that the oxidation of the InAs surface was hindered in acidic solutions, which was attributed to the dissolution of the oxidized surface layer. In particular, the treatment of the InAs surface using a strongly acidic solution with a pH of less than 3 produced an oxide-free surface due to the predominant etching of the InAs surface. The addition of H2O2 to the acidic solutions greatly increased the etching rate of the InAs surface, which suggests that the oxidation process is the rate-limiting step in the sequence of reactions that occur during the etching of the InAs surface in acidic solutions. The etching of InAs was suppressed in neutral solutions, which resulted in the formation of a relatively thicker oxide layer on the surface, and mild etching of the InAs surface took place in basic solutions. However, in basic solutions, the addition of H2O2 did not significantly contribute to the increase of the oxidation state of the InAs surface; thus, its effect on the etching rate of InAs was smaller than in acidic solutions.

  18. Shear Bond Strength of an Etch-and-rinse Adhesive to Er:YAG Laser- and/or Phosphoric Acid-treated Dentin

    PubMed Central

    Davari, Abdolrahim; Sadeghi, Mostafa; Bakhshi, Hamid

    2013-01-01

    Background and aims. Er:YAG laser irradiation has been claimed to improve the adhesive properties of dentin; therefore, it has been proposed as an alternative to acid etching. The aim of this in vitro study was to investigate the shear bond strength of an etch-and-rinse adhesive system to dentin surfaces following Er:YAG laser and/or phosphoric acid etching. Materials and methods. The roots of 75 sound maxillary premolars were sectioned below the CEJ and the crowns were embedded in auto-polymerizing acrylic resin with the buccal surfaces facing up. The buccal surfaces were ground using a diamond bur and polished until the dentin was exposed; the samples were randomly divided into five groups (n=15) according to the surface treatment: (1) acid etching; (2) laser etching; (3) laser etching followed by acid etching; (4) acid etching followed by laser etching and (5) no acid etching and no laser etching (control group). Composite resin rods (Point 4, Kerr Co) were bonded to treated dentin surfaces with an etch-and-rise adhesive system (Optibond FL, Kerr Co) and light-cured.After storage for two weeks at 37°C and 100% humidity and then thermocycling, bond strength was measured with a Zwick Universal Testing Machine at a crosshead speed of 1 mm/min. Data was analyzed using parametric and non-parametric tests (P<0.05). Results. Mean shear bond strength for acid etching (20.1±1.8 MPa) and acid+laser (15.6±3.5 MPa) groups were significantly higher than those for laser+acid (15.6±3.5 MPa), laser etching (14.1±3.4 MPa) and control (8.1±2.1 MPa) groups. However, there were no significant differences between acid etching and acid+laser groups, and between laser+acid and laser groups. Conclusion. When the cavity is prepared by bur, it is not necessary to etch the dentin surface by Er:YAG laser following acid etching and acid etching after laser etching. PMID:23875083

  19. Improvement of enamel bond strengths for conventional and resin-modified glass ionomers: acid-etching vs. conditioning*

    PubMed Central

    Zhang, Ling; Tang, Tian; Zhang, Zhen-liang; Liang, Bing; Wang, Xiao-miao; Fu, Bai-ping

    2013-01-01

    Objective: This study deals with the effect of phosphoric acid etching and conditioning on enamel micro-tensile bond strengths (μTBSs) of conventional and resin-modified glass ionomer cements (GICs/RMGICs). Methods: Forty-eight bovine incisors were prepared into rectangular blocks. Highly-polished labial enamel surfaces were either acid-etched, conditioned with liquids of cements, or not further treated (control). Subsequently, two matching pre-treated enamel surfaces were cemented together with one of four cements [two GICs: Fuji I (GC), Ketac Cem Easymix (3M ESPE); two RMGICs: Fuji Plus (GC), RelyX Luting (3M ESPE)] in preparation for μTBS tests. Pre-treated enamel surfaces and cement-enamel interfaces were analyzed by scanning electron microscopy (SEM). Results: Phosphoric acid etching significantly increased the enamel μTBS of GICs/RMGICs. Conditioning with the liquids of the cements produced significantly weaker or equivalent enamel μTBS compared to the control. Regardless of etching, RMGICs yielded stronger enamel μTBS than GICs. A visible hybrid layer was found at certain enamel-cement interfaces of the etched enamels. Conclusions: Phosphoric acid etching significantly increased the enamel μTBSs of GICs/RMGICs. Phosphoric acid etching should be recommended to etch the enamel margins before the cementation of the prostheses such as inlays and onlays, using GICs/RMGICs to improve the bond strengths. RMGICs provided stronger enamel bond strength than GICs and conditioning did not increase enamel bond strength. PMID:24190447

  20. Ultrastructure of the surface of dental enamel with molar incisor hypomineralization (MIH) with and without acid etching.

    PubMed

    Bozal, Carola B; Kaplan, Andrea; Ortolani, Andrea; Cortese, Silvina G; Biondi, Ana M

    2015-01-01

    The aim of the present work was to analyze the ultrastructure and mineral composition of the surface of the enamel on a molar with MIH, with and without acid etching. A permanent tooth without clinical MIH lesions (control) and a tooth with clinical diagnosis of mild and moderate MIH, with indication for extraction, were processed with and without acid etching (H3PO4 37%, 20") for observation with scanning electron microscope (SEM) ZEISS (Supra 40) and mineral composition analysis with an EDS detector (Oxford Instruments). The control enamel showed normal prismatic surface and etching pattern. The clinically healthy enamel on the tooth with MIH revealed partial loss of prismatic pattern. The mild lesion was porous with occasional cracks. The moderate lesion was more porous, with larger cracks and many scales. The mineral composition of the affected surfaces had lower Ca and P content and higher O and C. On the tooth with MIH, even on normal looking enamel, the demineralization does not correspond to an etching pattern, and exhibits exposure of crystals with rods with rounded ends and less demineralization in the inter-prismatic spaces. Acid etching increased the presence of cracks and deep pores in the adamantine structure of the enamel with lesion. In moderate lesions, the mineral composition had higher content of Ca, P and Cl. Enamel with MIH, even on clinically intact adamantine surfaces, shows severe alterations in the ultrastructure and changes in ionic composition, which affect the acid etching pattern and may interfere with adhesion.

  1. Color Stability of Enamel following Different Acid Etching and Color Exposure Times

    PubMed Central

    Jahanbin, Arezoo; Basafa, Mohammad; Moazzami, Mostafa; Basafa, Behnoush; Eslami, Neda

    2014-01-01

    Background and aims. The aim of this study was to evaluate the effect of different etching times on enamel color stability after immediate versus delayed exposure to colored artificial saliva (CAS). Materials and methods. Human first premolars were divided into five groups of twenty. A colorimeter was used according to the CIE system on the mid-buccal and mid-lingual surfaces to evaluate initial tooth color. Samples in group A remained unetched. In groups B to E, buccal and lingual surfaces were initially etched with phosphoric acid for 15 and 60 seconds, respectively. Then, the samples in groups A and C were immersed in colored artificial saliva (cola+saliva). In group B, the teeth were immersed in simple artificial saliva (AS). Samples in groups D and E were immersed in AS for 24 and 72 hours, respectively before being immersed in colored AS. The teeth were immersed for one month in each solution before color measurement. During the test period, the teeth were retrieved from the staining solution and stored in AS for five minutes. This was repeated 60 times. Color changes of buccal and lingual surfaces were calculated. Kruskal-Wallis and Wilcoxon tests were used for statistical analysis (α ≤0.05). Results. There were no significant differences between the groups in term of ΔE of buccal (P = 0.148) and lingual surfaces (P = 0.73). Conclusion. Extended time of etching did not result in significant enamel color change. Immediate and delayed exposure of etched enamel to staining solutions did not result in clinically detectable tooth color changes. PMID:25093048

  2. Effects of chemical etching on the surface quality and the laser induced damage threshold of fused silica optics

    NASA Astrophysics Data System (ADS)

    Pfiffer, Mathilde; Cormont, Philippe; Néauport, Jérôme; Lambert, Sébastien; Fargin, Evelyne; Bousquet, Bruno; Dussauze, Marc

    2016-12-01

    Effects of deep wet etching on the surface quality and the laser induced damage probability have been studied on fused silica samples. Results obtained with a HF/HNO3 solution and a KOH solution were compared on both polished pristine surface and scratched surfaces. The hydrofluoric solution radically deteriorated the surface quality creating a haze on the whole surface and increasing considerably the roughness. For both solutions, neither improvement nor deterioration of the laser damage performances has been observed on the etched surfaces while the laser damage resistance of scratches has been increased to the level of the surface. We conclude that laser damage performances are equivalent with both solutions but an acid etching induces surface degradation that is not experienced with basic etching.

  3. Etching process for improving the strength of a laser-machined silicon-based ceramic article

    DOEpatents

    Copley, S.M.; Tao, H.; Todd-Copley, J.A.

    1991-06-11

    A process is disclosed for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength. 1 figure.

  4. Etching process for improving the strength of a laser-machined silicon-based ceramic article

    DOEpatents

    Copley, Stephen M.; Tao, Hongyi; Todd-Copley, Judith A.

    1991-01-01

    A process for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength.

  5. Strength determination of periodontal splints fabricated from acid-etched retained materials.

    PubMed

    Compton, F H; Beagrie, G S; Chernecky, R

    1977-07-01

    Six systems (one polycarboxylate, one polymethyl methacrylate, one unfilled BIS-GMA resin, two combinations of methyl cyanoacrylate and polymethyl methacrylate, and one combination of unfilled BIS-GMA and filled composite resin) were evaluated for in vitro retention to acid-etched human enamel. Also tested were one unfilled-filled resin combination backed by perforated orthodontic band metal and another unfilled resin backed by stainless steel wire mesh. Significant differences in retention were found. Results show that retention depends pril surface and to resist subsequent chemical degradation.

  6. In situ chemical functionalization of gallium nitride with phosphonic acid derivatives during etching.

    PubMed

    Wilkins, Stewart J; Greenough, Michelle; Arellano, Consuelo; Paskova, Tania; Ivanisevic, Albena

    2014-03-04

    In situ functionalization of polar (c plane) and nonpolar (a plane) gallium nitride (GaN) was performed by adding (3-bromopropyl) phosphonic acid or propyl phosphonic acid to a phosphoric acid etch. The target was to modulate the emission properties and oxide formation of GaN, which was explored through surface characterization with atomic force microscopy, X-ray photoelectron spectroscopy, photoluminescence (PL), inductively coupled plasma-mass spectrometry, and water contact angle. The use of (3-bromopropyl) phosphonic acid and propyl phosphonic acid in phosphoric acid demonstrated lower amounts of gallium oxide formation and greater hydrophobicity for both sample sets, while also improving PL emission of polar GaN samples. In addition to crystal orientation, growth-related factors such as defect density in bulk GaN versus thin GaN films residing on sapphire substrates were investigated as well as their responses to in situ functionalization. Thin nonpolar GaN layers were the most sensitive to etching treatments due in part to higher defect densities (stacking faults and threading dislocations), which accounts for large surface depressions. High-quality GaN (both free-standing bulk polar and bulk nonpolar) demonstrated increased sensitivity to oxide formation. Room-temperature PL stands out as an excellent technique to identify nonradiative recombination as observed in the spectra of heteroepitaxially grown GaN samples. The chemical methods applied to tune optical and physical properties of GaN provide a quantitative framework for future novel chemical and biochemical sensor development.

  7. Effect of Lactic Acid Etching on Bonding Effectiveness of Orthodontic Bracket after Water Storage

    PubMed Central

    Alsulaimani, Fahad F.

    2014-01-01

    Objective. To determine the effect of lactic acid at various concentrations on the shear bond strength of orthodontic brackets bonded with the resin adhesive system before and after water storage. Materials and Methods. Hundred extracted human premolars were divided into 5 treatment groups and etched for 30 seconds with one of the following agents: lactic acid solution with (A) 10%, (B) 20%, (C) 30%, and (D) 50%; group E, 37% phosphoric acid (control). Metal brackets were bonded using a Transbond XT. Bonding effectiveness was assessed by shear bond strength after 24 hours and 6 months of water storage at 37°C. The data were analyzed with 2-way analysis of variance and Tukey's Honestly Significant Difference (HSD) test (α = .001). Results. Lactic acid concentration and water storage resulted in significant differences for brackets bond strength (P < .001). 20% lactic acid had significantly higher mean bond strength values (SD) for all conditions: 24 hours [12.2 (.7) MPa] and 6 months [10.1 (.6) MPa] of water storage. 37% phosphoric acid had intermediate bond strength values for all conditions: 24 hours [8.2 (.6) MPa] and 6 months [6.2 (.6) MPa] of water storage. Also, there were differences in bond strength between storage time, with a reduction in values from 24 hours and 6 months for all experimental groups (P < .001). Conclusion. Lactic acid could be used in place of phosphoric acid as an enamel etchant for bonding of orthodontic brackets. PMID:25006465

  8. Distinguishing shocked from tectonically deformed quartz by the use of the SEM and chemical etching

    USGS Publications Warehouse

    Gratz, A.J.; Fisler, D.K.; Bohor, B.F.

    1996-01-01

    Multiple sets of crystallographically-oriented planar deformation features (PDFs) are generated by high-strain-rate shock waves at pressures of > 12 GPa in naturally shocked quartz samples. On surfaces, PDFs appear as narrow (50-500 nm) lamellae filled with amorphosed quartz (diaplectic glass) which can be etched with hydrofluoric acid or with hydrothermal alkaline solutions. In contrast, slow-strain-rate tectonic deformation pressure produces wider, semi-linear and widely spaced arrays of dislocation loops that are not glass filled. Etching samples with HF before examination in a scanning electron microscope (SEM) allows for unambiguous visual distinction between glass-filled PDFs and glass-free tectonic deformation arrays in quartz. This etching also reveals the internal 'pillaring' often characteristic of shock-induced PDFs. This technique is useful for easily distinguishing between shock and tectonic deformation in quartz, but does not replace optical techniques for characterizing the shock features.

  9. Analysis of p-Si macropore etching using FFT-impedance spectroscopy.

    PubMed

    Ossei-Wusu, Emmanuel; Carstensen, Jürgen; Föll, Helmut

    2012-06-20

    The dependence of the etch mechanism of lithographically seeded macropores in low-doped p-type silicon on water and hydrofluoric acid (HF) concentrations has been investigated. Using different HF concentrations (prepared from 48 and 73 wt.% HF) in organic electrolytes, the pore morphologies of etched samples have been related to in situ impedance spectra (IS) obtained by Fast Fourier Transform (FFT) technique. It will be shown that most of the data can be fitted with a simple equivalent circuit model. The model predicts that the HF concentration is responsible for the net silicon dissolution rate, while the dissolution rate selectivity at the pore tips and walls that ultimately enables pore etching depends on the water content. The 'quality' of the pores increases with decreasing water content in HF/organic electrolytes.

  10. Comparative Study of the Effect of Acid Etching on Enamel Surface Roughness between Pumiced and Non-pumiced Teeth

    PubMed Central

    Abreu, Lucas Guimarães; Paiva, Saul Martins; Pretti, Henrique; Lages, Elizabeth Maria Bastos; Júnior, João Batista Novães; Ferreira, Ricardo Alberto Neto

    2015-01-01

    Background: The objective was to perform a comparative analysis of the effect of acid etching on enamel roughness between pumiced and non-pumiced teeth. Materials and Methods: The sample was composed of 32 dental surfaces divided into two groups: Group 1-16 surfaces having received pumice prophylaxis; and Group 2-16 surfaces not having received pumice prophylaxis. The teeth were kept in saline until the first record of surface roughness prior to etching. For each surface, a roughness graph was obtained through trials using a surface roughness tester. This procedure was repeated two more times at different locations for a total of three readings which, later, were converted in a mean value. The teeth were then acid etched with a 37% phosphoric acid for 60 s, rinsed with water, air dried, and tested with the roughness tester again using the same protocol described for baseline. The Quantikov image analysis program was used to measure the length of the graphs. The average value of the lengths was recorded for each surface before and after etching. The increase in roughness caused by acid etching was calculated and compared between groups. Results: The mean increase in roughness caused by the etching was 301 µm (11.37%) in Group 1 and 214 µm (8.33%) in Group 2. No statistically significant difference was found between samples with and without pumice prophylaxis (P = 0.283). Conclusion: The present study showed that the effect of acid etching on enamel roughness was not significantly affected by prior pumice prophylaxis. PMID:26435607

  11. Restoration of obliterated engraved marks on steel surfaces by chemical etching reagent.

    PubMed

    Song, Qingfang

    2015-05-01

    Chemical etching technique is widely used for restoration of obliterated engraved marks on steel surface in the field of public security. The consumed thickness of steel surface during restoration process is considered as a major criterion for evaluating the efficiency of the chemical etching reagent. The thinner the consumed thickness, the higher the restoration efficiency. According to chemical principles, maintaining the continuous oxidative capabilities of etching reagents and increasing the kinetic rate difference of the reaction between the engraved and non-engraved area with the chemical etching reagent can effectively reduce the consumed steel thickness. The study employed steel surface from the engine case of motorcycle and the car frame of automobile. The chemical etching reagents are composed of nitric acid as the oxidizer, hydrofluoric acid as the coordination agent and mixed with glacial acetic acid or acetone as the solvents. Based on the performance evaluation of three different etching reagents, the one composed of HNO3, HF and acetone gave the best result.

  12. Cell adhesion and in vivo osseointegration of sandblasted/acid etched/anodized dental implants.

    PubMed

    Kim, Mu-Hyon; Park, Kyeongsoon; Choi, Kyung-Hee; Kim, Soo-Hong; Kim, Se Eun; Jeong, Chang-Mo; Huh, Jung-Bo

    2015-05-06

    The authors describe a new type of titanium (Ti) implant as a Modi-anodized (ANO) Ti implant, the surface of which was treated by sandblasting, acid etching (SLA), and anodized techniques. The aim of the present study was to evaluate the adhesion of MG-63 cells to Modi-ANO surface treated Ti in vitro and to investigate its osseointegration characteristics in vivo. Four different types of Ti implants were examined, that is, machined Ti (control), SLA, anodized, and Modi-ANO Ti. In the cell adhesion study, Modi-ANO Ti showed higher initial MG-63 cell adhesion and induced greater filopodia growth than other groups. In vivo study in a beagle model revealed the bone-to-implant contact (BIC) of Modi-ANO Ti (74.20%±10.89%) was much greater than those of machined (33.58%±8.63%), SLA (58.47%±12.89), or ANO Ti (59.62%±18.30%). In conclusion, this study demonstrates that Modi-ANO Ti implants produced by sandblasting, acid etching, and anodizing improve cell adhesion and bone ongrowth as compared with machined, SLA, or ANO Ti implants. These findings suggest that the application of Modi-ANO surface treatment could improve the osseointegration of dental implant.

  13. In vitro remineralization of acid-etched human enamel with Ca 3SiO 5

    NASA Astrophysics Data System (ADS)

    Dong, Zhihong; Chang, Jiang; Deng, Yan; Joiner, Andrew

    2010-02-01

    Bioactive and inductive silicate-based bioceramics play an important role in hard tissue prosthetics such as bone and teeth. In the present study, a model was established to study the acid-etched enamel remineralization with tricalcium silicate (Ca 3SiO 5, C 3S) paste in vitro. After soaking in simulated oral fluid (SOF), Ca-P precipitation layer was formed on the enamel surface, with the prolonged soaking time, apatite layer turned into density and uniformity and thickness increasingly from 250 to 350 nm for 1 day to 1.7-1.9 μm for 7 days. Structure of apatite crystals was similar to that of hydroxyapatite (HAp). At the same time, surface smoothness of the remineralized layer is favorable for the oral hygiene. These results suggested that C 3S treated the acid-etched enamel can induce apatite formation, indicating the biomimic mineralization ability, and C 3S could be used as an agent of inductive biomineralization for the enamel prosthesis and protection.

  14. The effect of topical fluorides, after acid etching of enamel, on the bond strength of directly bonded orthodontic brackets.

    PubMed

    Hirce, J D; Sather, A H; Chao, E Y

    1980-10-01

    This study tests the hypothesis that the beneficial effects of topical fluoride can be realized without reducing the bond strength of the resin adhesive. Twenty-eight groups of four teeth (third molars and premolars) were extracted from twenty-eight patients and stored in distilled water. Twin brackets on Ormesh pads were bonded to all teeth with Endur adhesive. One tooth from each group was bonded according to the manufacturer's instructions. These teeth, Subgroup I, served as controls. Subgroup II teeth were etched for 4 minutes with 50% phosphoric acid containing 2 percent sodium fluoride. Subgroup III teeth received a 3-minute application of a basic phosphate fluoride solution (10(-2)M NA3PO4, 10(3) ppm F) after 1 minute of etching with 50 percent phosphoric acid. Subgroup IV teeth received a 4-minute application of 8 percent stannous fluoride solution after 1 minute of etching with 50 percent phosphoric acid. Each tooth was mounted in a block of improved dental stone; guide wires were used to reproduce bracket orientation. The M.T.S. materials-testing apparatus was used to generate a torsional moment on the bracket at a rate of 1 degree per second. Fluoride uptake by enamel has been shown to be greater in an acid medium or after acid etching. The application of directly bonded orthodontic brackets and pit-and-fissure sealants requires acid etching of the enamel surface. This study supports the use of topical fluoride after acid etching, a procedure that achieves the benefits of increased fluoride uptake without changing the bond strength of the resin adhesive.

  15. Nanofabrication on monocrystalline silicon through friction-induced selective etching of Si3N4 mask.

    PubMed

    Guo, Jian; Yu, Bingjun; Wang, Xiaodong; Qian, Linmao

    2014-01-01

    A new fabrication method is proposed to produce nanostructures on monocrystalline silicon based on the friction-induced selective etching of its Si3N4 mask. With low-pressure chemical vapor deposition (LPCVD) Si3N4 film as etching mask on Si(100) surface, the fabrication can be realized by nanoscratching on the Si3N4 mask and post-etching in hydrofluoric acid (HF) and potassium hydroxide (KOH) solution in sequence. Scanning Auger nanoprobe analysis indicated that the HF solution could selectively etch the scratched Si3N4 mask and then provide the gap for post-etching of silicon substrate in KOH solution. Experimental results suggested that the fabrication depth increased with the increase of the scratching load or KOH etching period. Because of the excellent masking ability of the Si3N4 film, the maximum fabrication depth of nanostructure on silicon can reach several microns. Compared to the traditional friction-induced selective etching technique, the present method can fabricate structures with lesser damage and deeper depths. Since the proposed method has been demonstrated to be a less destructive and flexible way to fabricate a large-area texture structure, it will provide new opportunities for Si-based nanofabrication.

  16. Ultradeep fused silica glass etching with an HF-resistant photosensitive resist for optical imaging applications

    NASA Astrophysics Data System (ADS)

    Nagarah, John M.; Wagenaar, Daniel A.

    2012-03-01

    Microfluidic and optical sensing platforms are commonly fabricated in glass and fused silica (quartz) because of their optical transparency and chemical inertness. Hydrofluoric acid (HF) solutions are the etching media of choice for deep etching into silicon dioxide substrates, but processing schemes become complicated and expensive for etching times greater than 1 h due to the aggressiveness of HF migration through most masking materials. We present here etching into fused silica more than 600 µm deep while keeping the substrate free of pits and maintaining a polished etched surface suitable for biological imaging. We utilize an HF-resistant photosensitive resist (HFPR) which is not attacked in 49% HF solution. Etching characteristics are compared for substrates masked with the HFPR alone and the HFPR patterned on top of Cr/Au and polysilicon masks. We used this etching process to fabricate suspended fused silica membranes, 8-16 µm thick, and show that imaging through the membranes does not negatively affect image quality of fluorescence microscopy of biological tissue. Finally, we realize small through-pore arrays in the suspended membranes. Such devices will have applications in planar electrophysiology platforms, especially where optical imaging is required.

  17. Noble Gases and Nitrogen Released from a Lunar Soil Pyroxene Separate by Acid Etching

    NASA Astrophysics Data System (ADS)

    Rider, P. E.

    1993-07-01

    We report initial results from a series of experiments designed to measure recently implanted solar wind (SW) ions in lunar soil mineral grains [1]. An acid-etching technique similar to the CSSE method developed at ETH Zurich was used to make abundance and isotope measurements of the SW noble gas and nitrogen compositions. Among the samples examined was a pyroxene separate from soil 75081. It was first washed with H2O to remove contamination from the sample finger walls and grain surfaces. H2O also acted as a weak acid, releasing gases from near-surface sites. Treatment with H2SO3 followed the water washes. Acid pH (~1.8 to ~1.0) and temperature (~23 degrees C to ~90 degrees C) and duration of acid attack (several minutes to several days) were varied from step to step. Finally, the sample was pyrolyzed in several steps to remove the remaining gases, culminating with a high-temperature pyrolysis at 1200 degrees C. Measurements of the light noble gases were mostly consistent with those from previous CSSE experiments performed on pyroxene [2,3]. It should be noted, however, that the Zurich SEP component was not easily distinguishable in the steps where it was expected to be observed. We suspect our experimental protocol masked the SEP reservoir, preventing us from seeing its distinctive signature. The most interesting results from this sample are its Kr and Xe isotopic and elemental compositions. Pyroxene apparently retains heavy noble gases as well as ilmenite (and plagioclase [4]). The heavy noble gas element ratios from this sample along with those previously reported [5,6] are, however, considerably heavier than the theoretically determined "solar system" values [7,8]. Explanations for the difference include the possibility that the derivations are incorrect, that there is another component of lunar origin mixing with the solar component, or that some type of loss mechanism is altering the noble gas reservoirs of the grains. The Kr and Xe isotopic compositions for

  18. Effect of acid labile ether protecting groups on the oxide etch resistance and lithographic performance of 248-nm resists

    NASA Astrophysics Data System (ADS)

    Varanasi, Pushkara R.; Cornett, Kathleen M.; Lawson, Margaret C.

    2000-06-01

    In our attempts to develop etch resistance 248 nm positive resists, we have designed and synthesized thermally stable and acid sensitive methylbenzyl ether (MBE) protected poly(hydroxystyrene) derivatives. Results presented in this paper clearly illustrate that the MBE protecting group provides superior etch resistance to conventional carbonate, ester and acetal/ketal based protecting groups. It is also shown that the MBE protecting group is thermally stable and undergoes acid catalyzed deprotection leading to preferential rearrangement products due to electrophilic ring substitution. Such a rearrangement is shown to provide a unique mechanism to reduce/eliminate resist shrinkage and improve lithographic performance.

  19. Fabrication of Alumina Nanowires from Porous Alumina Membranes by Etching in Phosphoric Acid Solution

    NASA Astrophysics Data System (ADS)

    Wang, Xuehua; Li, Chengyong; Ma, Lianjiao; Cao, Hong; Zhang, Baohua

    Alumina nanowires (ANWs) with high aspect ratios were synthesized by the chemical etching of porous alumina membranes (PAMs) in phosphoric acid solution. The morphology and structure of ANWs were analyzed by SEM and XRD, respectively. The results showed that the typical features of ANWs are around 35 nm in diameter and around 20 μm in length, the crystalline structure of the ANWs was amorphous, which was in accordance with that of the PAMs. Furthermore, the morphology of the PAMs was characterized by AFM and SEM in detail. On the basis of AFM and SEM observations, a possible formation mechanism of ANWs was discussed, and the inhomogeneous of the dissolution between the triple points and the side walls was considered to be the essential factor deciding the formation of ANWs.

  20. Comparative Evaluation of Tensile – Bond Strength of An Orthodontic Adhesive with and without Fluoride Application, After Acid Etching -An Invitro Study

    PubMed Central

    Yugandhar, G; Ramana, I Venkata; Srinivas, K; Yadav, S. Sarjeev Singh

    2015-01-01

    Background Fixed appliances hinder the effective control of plaque accumulation and white spot lesions may develop under the ill fitting bands or adjacent to the stainless steel brackets during orthodontic treatment particularly the etching process. Aims and Objectives Comparative study of tensile bond strength of an orthodontic adhesive with and without fluoride application after acid etching to know the effect of fluoride on bond strength. Materials and Methods This study is carried out on 90 non carious human premolar teeth, and divided in 6 groups with each group of 15 specimens. In those Groups I and IV were control group acid etch treatment, Group II and V is 1.23% APF gel (acid etch plus APF gel treatment,) and group III and VI is 8% SnF2 (acid etch plus SnF2 treatment). Samples of Group I, II and III bond strength were tested after 24 h and groups IV, V and VI after one month on microtechtensometer machine. The scanning electron microscope (SEM) investigation was carried out for the 2 specimens for the control group after acid etch and 4 specimens after acid etch with fluoride application for fluoride groups. Results Control and SnF2 treated groups was found to be nearly similar to the control group whereas APF treated group showed less focal holes than the other 2 groups. Conclusion Fluoride application after acid etching without having an adverse effect on bond strength but we can prevent the white spot lesions and caries. PMID:26023648

  1. Effect of etching time and light source on the bond strength of metallic brackets to ceramic.

    PubMed

    Gonçalves, Paulo Roberto Amaral; Moraes, Rafael Ratto de; Costa, Ana Rosa; Correr, Américo Bortolazzo; Nouer, Paulo Roberto Aranha; Sinhoreti, Mário Alexandre Coelho; Correr-Sobrinho, Lourenço

    2011-01-01

    This study evaluated the bond strength of brackets to ceramic testing different etching times and light sources for photo-activation of the bonding agent. Cylinders of feldspathic ceramic were etched with 10% hydrofluoric acid for 20 or 60 s. After application of silane on the ceramic surface, metallic brackets were bonded to the cylinders using Transbond XT (3M Unitek). The specimens for each etching time were assigned to 4 groups (n=15), according to the light source: XL2500 halogen light, UltraLume 5 LED, AccuCure 3000 argon laser, and Apollo 95E plasma arc. Light-activation was carried out with total exposure times of 40, 40, 20 and 12 s, respectively. Shear strength testing was carried out after 24 h. The adhesive remnant index (ARI) was evaluated under magnification. Data were subjected to two-way ANOVA and Tukey's test (α=0.05). Specimens etched for 20 s presented significantly lower bond strength (p<0.05) compared with those etched for 60 s. No significant differences (p>0.05) were detected among the light sources. The ARI showed a predominance of scores 0 in all groups, with an increase in scores 1, 2 and 3 for the 60 s time. In conclusion, only the etching time had significant influence on the bond strength of brackets to ceramic.

  2. Mixed matrix membranes with HF acid etched ZSM-5 for ethanol/water separation: Preparation and pervaporation performance

    NASA Astrophysics Data System (ADS)

    Zhan, Xia; Lu, Juan; Tan, Tingting; Li, Jiding

    2012-10-01

    The mixed matrix membranes (MMMs) were prepared from crosslinked PDMS incorporated with HF acid etched ZSM-5. ZSM-5 zeolite was etched with a series of HF aqueous-acetone solution and characterized by SEM, BET, XRD and FT-IR. It was found that HF etching process was very effective for removing organic impurities in zeolite and micro-pores were observed out of the surface of zeolite particles, which enhanced the hydrophobicity and surface roughness of ZSM-5 successfully. Both tensile strength and swelling resistance of ZSM-5/PDMS MMMs increased with the rising concentration of HF solution, which can mainly be attributed to the improved zeolite-PDMS interfacial adhesion resulted from the intrusion of PDMS into micro-pores out of the ZSM-5 surface. Subsequently, the sorption experiment was performed with the results suggesting preferential sorption of ethanol by MMMs. Moreover, the sorption selectivity of ZSM-5/PDMS MMMs increased notably as the concentration of HF solution increased. The pervaporation performance of ethanol/water mixtures using MMMs was also investigated in detail. The MMMs filled with etched ZSM-5 showed much better selectivity than that filled with non-etched ones, with a little expense of permeability. It was found that with the same zeolite loading, increasing the HF acid concentration in etching process enhanced the zeolite-PDMS interfacial adhesion which promoted the ethanol selectivity of MMMs, while depressed the total permeation flux a little. In addition, both ethanol permeation and the selectivity increased with an increase of the zeolite loading from 10% to 30%. Nevertheless, excessive zeolite loading or decreasing thickness of selective layer led to the poor selectivity to ethanol. A decline of the ethanol selectivity was also observed as the feed ethanol concentration as well as feed temperature increased.

  3. Optimization of HNA etching parameters to produce high aspect ratio solid silicon microneedles

    NASA Astrophysics Data System (ADS)

    Hamzah, A. A.; Abd Aziz, N.; Yeop Majlis, B.; Yunas, J.; Dee, C. F.; Bais, B.

    2012-09-01

    High aspect ratio solid silicon microneedles with a concave conic shape were fabricated. Hydrofluoric acid-nitric acid-acetic acid (HNA) etching parameters were characterized and optimized to produce microneedles that have long and narrow bodies with smooth surfaces, suitable for transdermal drug delivery applications. The etching parameters were characterized by varying the HNA composition, the optical mask's window size, the etching temperature and bath agitation. An L9 orthogonal Taguchi experiment with three factors, each having three levels, was utilized to determine the optimal fabrication parameters. Isoetch contours for HNA composition with 0% and 10% acetic acid concentrations were presented and a high nitric acid region was identified to produce microneedles with smooth surfaces. It is observed that an increase in window size indiscriminately increases the etch rate in both the vertical and lateral directions, while an increase in etching temperature beyond 35 °C causes the etching to become rapid and uncontrollable. Bath agitation and sample placement could be manipulated to achieve a higher vertical etch rate compared to its lateral counterpart in order to construct high aspect ratio microneedles. The Taguchi experiment performed suggests that a HNA composition of 2:7:1 (HF:HNO3:CH3COOH), window size of 500 µm and agitation rate of 450 RPM are optimal. Solid silicon microneedles with an average height of 159.4 µm, an average base width of 110.9 µm, an aspect ratio of 1.44, and a tip angle and diameter of 19.2° and 0.38 µm respectively were successfully fabricated.

  4. Inactivation of Matrix-bound MMPs by Cross-linking Agents in Acid Etched Dentin

    PubMed Central

    Scheffel, Débora Lopes Salles; Hebling, Josimeri; Scheffel, Régis Henke; Agee, Kelly A.; Turco, Gianluca; de Souza Costa, Carlos Alberto; Pashley, David H.

    2014-01-01

    Objectives Published TEM analysis of in vivo resin-dentin bonds shows that in 44 months almost 70% of collagen fibrils from the hybrid layer disappear. Matrix metalloproteinases (MMPs) play an important role in that process and are thought to be the main factor responsible for the solubitization of dentin collagen. Therefore, this study aimed to evaluate the inactivation of matrix-bound MMPs by carbodiimide (EDC) or proanthocyanidin (PA) both cross-linking agents, or the MMP-inhibitor, chlorhexidine (CHX), on acid-etched dentin using a simplified MMP assay method. Methods Dentin beams (1×1×6mm) were obtained from mid-coronal dentin of sound third molars and randomly divided into 6 groups (G) according to the dentin treatment: G1: Deionized water (control), G2: 0.1M EDC, G3: 0.5M EDC, G4: 0.5M EDC+35% HEMA, G5: 5% Proanthocyanidin (PA) and G6: 2% CHX. The beams were etched for 15s with 37% phosphoric acid, rinsed and then immersed for 60s in one of the treatment solutions. The total MMP activity of dentin was analyzed for 1 h by colorimetric assay (Sensolyte). Data were submitted to Wilcoxon non-parametric test and Mann-Whitney tests (p>0.05). Results All experimental cross-linking solutions significantly reduced MMP activity compared to control, except 0.1M EDC (53.6% ±16.1). No difference was observed between cross-linking agents and 2% CHX 0.5M EDC + 35% HEMA (92.3% ±8.0) was similar to 0.5M EDC (89.1% ±6.4), 5% PA (100.8% ±10.9) and 2% CHX (83.4% ±10.9). Conclusion Dentin treatment with cross-linking agents is effective to significantly reduce MMP activity. Mixing 0.5M EDC and 35% HEMA did not influence EDC inhibitor potential. PMID:23786610

  5. Effect of the application time of phosphoric acid and self-etch adhesive systems to sclerotic dentin

    PubMed Central

    MENA-SERRANO, Alexandra Patricia; GARCIA, Eugenio Jose; PEREZ, Miguel Muñoz; MARTINS, Gislaine Cristine; GRANDE, Rosa Helena Miranda; LOGUERCIO, Alessandro Dourado; REIS, Alessandra

    2013-01-01

    Objectives: To evaluate the effect of application time on the resin-dentin bond strength (µTBS) and etching pattern of adhesive systems applied on sclerotic dentine. Material and Methods: A total of forty-two bovine incisors had their roots removed. The 1-step self-etch GO (SDI), the 2-step self-etch Adper SE Bond (3MESPE) and the 35% phosphoric acid (3MESPE) from the 2-step etch-and-rinse Adper Single Bond 2 (3MESPE) were applied on the bovine incisal surfaces according to the manufacturer's instructions or duplicating the recommended conditioning time. After adhesive application, thirty teeth were restored with composite resin, stored for 24 h in distilled water at 37º C, and sectioned into resin-dentin bonded sticks (0.8 mm2) and tested according to the µTBS at 0.5 mm/min. The etching pattern of the remaining twelve teeth (n=4 for each material) was examined under scanning electron microscopy. Each tooth was divided into a buccal-to-lingual direction into three thirds, and each third randomly assigned to the groups: control (no treatment), according to the manufacturers' instructions and duplicating the recommended application time. The µTBS and the relative percentage of the tubule area opening were evaluated by two-way repeated measures ANOVA and Tukey's tests (α=0.05). Results: The duplication of the conditioning time favored only the GO adhesive (p<0.05). Both application methods significantly increased the tubule area opening (p<0.05) compared to the controls. Conclusions: The efficacy of duplicating the conditioning time was only effective for the 1-step self-etch adhesive system tested. PMID:23739856

  6. Effect of a fluoride-releasing self-etch acidic primer on the shear bond strength of orthodontic brackets.

    PubMed

    Bishara, Samir E; Ajlouni, Raed; Laffoon, John F; Warren, John J

    2002-06-01

    Conventional adhesive systems use three different agents--an enamel conditioner, a primer solution, and an adhesive resin--during the bonding of orthodontic brackets to enamel. A unique characteristic of some new bonding systems in operative dentistry is that they combine the conditioning and priming agents into a single application. Combining conditioning and priming saves time and should be more cost-effective to the clinician and indirectly to the patient. The purpose of this study was to assess and compare the effects of self-etching primers, including a fluoride-releasing primer, on the shear bond strength of orthodontic brackets. The brackets were bonded to extracted human teeth according to one of four protocols. In group 1 (control), teeth were etched with 37% phosphoric acid; after the sealant was applied, the brackets were bonded with Transbond XT (3M Unitek, Monrovia, Calif) and light cured for 20 seconds. In group 2, a self-etch acidic primer (3M ESPE, St Paul, Minn) was applied as suggested by the manufacturer, and the brackets were then bonded with Transbond XT as in the first group. In group 3, an experimental self-etch primer EXL #547 (3M ESPE) was applied to the teeth as suggested by the manufacturer, and the brackets were then bonded as in groups 1 and 2. In group 4, a fluoride-releasing self-etch primer, One-Up Bond F (J. Mortia, USA Inc. Irvine, Calif) that also has a novel dye-sensitized photo polymerization initiator system was applied as suggested by the manufacturer, and the brackets were then bonded as in the other groups. The present in vitro findings indicated that the shear bond strengths of the four groups were significantly different (P = .001). Duncan multiple range tests indicated that One-Up Bond F (mean +/- SD strength, 5.1+/-2.5 MPa) and Prompt L-Pop (strength, 7.1+/-4.4 MPa) had significantly lower shear bond strengths than both the EXL #547 self-etch primer (strength, 9.7+/-3.7 MPa) or the phosphoric acid etch and the

  7. Wet-etching of precipitation-based thin film microstructures for micro-solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Rupp, Jennifer L. M.; Muecke, Ulrich P.; Nalam, Prathima C.; Gauckler, Ludwig J.

    In micro-solid oxide fuel cells (μ-SOFCs) ceramic thin films are integrated as free-standing membranes on micromachinable substrates such as silicon or Foturan ® glass ceramic wafers. The processing of μ-SOFCs involves unavoidable dry- or wet-chemical etching for opening the substrate below the free-standing fuel cell membranes. In the first part of this paper current dry- and wet-chemical etchants for structuring of ceria-based electrolyte materials are reviewed, and compared to the etch-rates of common μ-SOFCs substrates. Wet-chemical etchants such as hydrofluoric acid are of high interest in μ-SOFC processing since they allow for homogeneous etching of ceria-based electrolyte thin films contrary to common dry-etching methods. In addition, HF acid is the only choice for substrate etching of μ-SOFC based on Foturan ® glass ceramic wafers. Etching of Ce 0.8Gd 0.2O 1.9- x spray pyrolysis electrolyte thin films with 10% HF:H 2O is investigated. The etch-resistance and microstructures of these films show a strong dependency on post deposition annealing, i.e. degree of crystallinity, and damage for low acid exposure times. Their ability to act as a potential etch-resistance for μ-SOFC membranes is broadly discussed. Guidance for thermal annealing and etching of Ce 0.8Gd 0.2O 1.9- x thin films for the fabrication of Foturan ®-based μ-SOFCs is given.

  8. Hydrothermal synthesis of hollow silica spheres under acidic conditions.

    PubMed

    Yu, Qiyu; Wang, Pengpeng; Hu, Shi; Hui, Junfeng; Zhuang, Jing; Wang, Xun

    2011-06-07

    It is well-known that silica can be etched in alkaline media or in a unique hydrofluoric acid (HF) solution, which is widely used to prepare various kinds of hollow nanostructures (including silica hollow structures) via silica-templating methods. In our experiments, we found that stöber silica spheres could be etched in generic acidic media in a well-controlled way under hydrothermal conditions, forming well-defined hollow/rattle-type silica spheres. Furthermore, some salts such as NaCl and Na(2)SO(4) were found to be favorable for the formation of hollow/rattle-type silica spheres.

  9. Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs.

    PubMed

    Bioud, Youcef A; Boucherif, Abderraouf; Belarouci, Ali; Paradis, Etienne; Drouin, Dominique; Arès, Richard

    2016-12-01

    We have performed a detailed characterization study of electrochemically etched p-type GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and characterized through cathodoluminescence (CL), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). It was found that after electrochemical etching, the porous layer showed a major decrease in the CL intensity and a change in chemical composition and in the crystalline phase. Contrary to previous reports on p-GaAs porosification, which stated that the formed layer is composed of porous GaAs, we report evidence that the porous layer is in fact mainly constituted of porous As2O3. Finally, a qualitative model is proposed to explain the porous As2O3 layer formation on p-GaAs substrate.

  10. An analysis of the shear strength of the bond between enamel and porcelain laminate veneers with different etching systems: acid and Er,Cr:YSGG laser separately and combined.

    PubMed

    Dundar, Berivan; Guzel, Kahraman Gündüz

    2011-11-01

    Conditioning of the enamel surface is now an accepted and widely applied technique used to improve retention in porcelain laminate veneer restorations. The aim of this study was to evaluate strength of the bond between porcelain laminate veneers and tooth surfaces etched with acid and laser, separately and together. The teeth studied comprised 60 incisors extracted for periodontal reasons. These were divided into four groups according to etching method: group 1, acid etching alone; group 2, acid etching followed by laser etching; group 3, laser etching followed by acid etching; group 4, laser etching alone. The teeth were etched with 37% phosphoric acid and a Er,Cr:YSGG laser system. In addition, 60 IPS Empress II cylindrical blocks 2 mm in height and 5 mm in diameter were also prepared for the etched tooth surface. These blocks were bonded to the teeth with dual cured resin cement and shear tests were then performed. After the shear tests, Scanning electron microscopy images of the tooth surfaces were obtained at a magnification of ×3,800. Etching with acid alone yielded the highest mean value of bond shear strength (15.4±3.8 MPa), while laser etching followed by acid etching gave the lowest mean value (11.5±4.6 MPa). The mean values of the bond shear strength for acid etching followed by laser etching and laser etching alone were 13.8±3.9 MPa and 12.8±4.6 MPa, respectively. Statistical analysis revealed no significant differences between the groups. The results suggest that laser etching is easy to apply and less time-consuming. They further suggest that the order in which the acid and laser are applied in combined treatments is important.

  11. Porous siliconformation and etching process for use in silicon micromachining

    DOEpatents

    Guilinger, Terry R.; Kelly, Michael J.; Martin, Jr., Samuel B.; Stevenson, Joel O.; Tsao, Sylvia S.

    1991-01-01

    A reproducible process for uniformly etching silicon from a series of micromechanical structures used in electrical devices and the like includes providing a micromechanical structure having a silicon layer with defined areas for removal thereon and an electrochemical cell containing an aqueous hydrofluoric acid electrolyte. The micromechanical structure is submerged in the electrochemical cell and the defined areas of the silicon layer thereon are anodically biased by passing a current through the electrochemical cell for a time period sufficient to cause the defined areas of the silicon layer to become porous. The formation of the depth of the porous silicon is regulated by controlling the amount of current passing through the electrochemical cell. The micromechanical structure is then removed from the electrochemical cell and submerged in a hydroxide solution to remove the porous silicon. The process is subsequently repeated for each of the series of micromechanical structures to achieve a reproducibility better than 0.3%.

  12. Effect of Alkaline pH on Polishing and Etching of Single and Polycrystalline Silicon

    NASA Astrophysics Data System (ADS)

    Venkatesh, R. Prasanna; Prasad, Y. Nagendra; Kwon, Tae-Young; Kang, Young-Jae; Park, Jin-Goo

    2012-07-01

    In this paper, the polishing and etching behavior of single and polycrystalline silicon were studied. Prior to chemical mechanical polishing (CMP) process, the surfaces were treated with dilute hydrofluoric acid (DHF) to remove native oxides. The surface analysis shows that the poly contains trace amount of oxygen even after DHF treatment. The static and dynamic etch rates, and removal rates were measured as a function of slurry pH. The single silicon showed a higher static etch rate than the poly. After static etch rate measurements, poly showed higher surface roughness and more hydrophilic which indicates that the surface of poly is different from single crystal silicon. The friction force between pad and substrate and pad temperature was also measured as a function of pH during polishing in order to get more understanding of polishing process. At all the pH values being investigated, poly showed lower dynamic and removal rates, higher friction force and higher temperature. This indicates that the removal of poly in CMP is predominantly by mechanical actions. Also, these results, suggest a mechanism in which the oxygen present in the poly grain boundaries strongly influences the etching and removal mechanism.

  13. Formation of Mach angle profiles during wet etching of silica and silicon nitride materials

    NASA Astrophysics Data System (ADS)

    Ghulinyan, M.; Bernard, M.; Bartali, R.; Pucker, G.

    2015-12-01

    In integrated circuit technology peeling of masking photoresist films is a major drawback during the long-timed wet etching of materials. It causes an undesired film underetching, which is often accompanied by a formation of complex etch profiles. Here we report on a detailed study of wedge-shaped profile formation in a series of silicon oxide, silicon oxynitride and silicon nitride materials during wet etching in a buffered hydrofluoric acid (BHF) solution. The shape of etched profiles reflects the time-dependent adhesion properties of the photoresist to a particular material and can be perfectly circular, purely linear or a combination of both, separated by a knee feature. Starting from a formal analogy between the sonic boom propagation and the wet underetching process, we model the wedge formation mechanism analytically. This model predicts the final form of the profile as a function of time and fits the experimental data perfectly. We discuss how this knowledge can be extended to the design and the realization of optical components such as highly efficient etch-less vertical tapers for passive silicon photonics.

  14. Effect of acid etching duration on tensile bond strength of composite resin bonded to erbium:yttrium-aluminium-garnet laser-prepared dentine. Preliminary study.

    PubMed

    Chousterman, M; Heysselaer, D; Dridi, S M; Bayet, F; Misset, B; Lamard, L; Peremans, A; Nyssen-Behets, C; Nammour, S

    2010-11-01

    The purpose of this study was to compare the tensile bond strength of composite resin bonded to erbium:yttrium-aluminium-garnet (Er:YAG) laser-prepared dentine after different durations of acid etching. The occlusal third of 68 human third molars was removed in order to expose the dentine surface. The teeth were randomly divided into five groups: group B (control group), prepared with bur and total etch system with 15 s acid etching [37% orthophosphoric acid (H(3)PO(4))]; group L15, laser photo-ablated dentine (200 mJ) (laser irradiation conditions: pulse duration 100 micros, air-water spray, fluence 31.45 J/ cm(2), 10 Hz, non-contact hand pieces, beam spot size 0.9 mm, irradiation speed 3 mm/s, and total irradiation time 2 x 40 s); group L30, laser prepared, laser conditioned and 30 s acid etching; group L60, laser prepared, laser conditioned and 60 s acid etching; group L90, laser prepared, laser conditioned and 90 s acid etching. A plot of composite resin was bonded onto each exposed dentine and then tested for tensile bond strength. The values obtained were statistically analysed by analysis of variance (ANOVA) coupled with the Tukey-Kramer test at the 95% level. A 90 s acid etching before bonding showed the best bonding value (P < 0.05) when compared with all the other groups including the control group. There is no significance difference between other groups, nor within each group and the control group. There was a significant increase in tensile bond strength of the samples acid etched for 90 s.

  15. Instrumentation With Ultrasonic Scalers Facilitates Cleaning of the Sandblasted and Acid-Etched Titanium Implants.

    PubMed

    Park, Jun-Beom; Lee, Sung-Hoon; Kim, NamRyang; Park, Seojin; Jin, Seong-Ho; Choi, Bong-Kyu; Kim, Kack-Kyun; Ko, Youngkyung

    2015-08-01

    Mechanical instrumentation is widely used to debride dental implants, but this may alter the surface properties of titanium, which in turn may influence bacterial adhesion and make it more difficult to remove the biofilm. This in vitro study was performed (1) to assess the amount of biofilm formation on a sand-blasted and acid-etched titanium fixture treated with ultrasonic scalers with metal, plastic, and carbon tips and (2) to evaluate how this treatment of titanium surfaces affects implant cleaning by brushing with dentifrice. The titanium fixtures were treated with various ultrasonic scaler tips, and surface roughness parameters were measured by confocal microscopy. Biofilm was formed on the treated fixtures by using pooled saliva from 10 subjects, and the quantity of the adherent bacteria was compared with crystal violet assay. The fixture surfaces with biofilm were brushed for total of 30 seconds with a toothbrush with dentifrice. The bacteria remaining on the brushed fixture surfaces were quantified by scanning electron microscopy. Surface changes were evident, and the changes of the surfaces were more discernible when metal tips were used. A statistically significant decrease in roughness value (arithmetic mean height of the surface) was seen in the 2 metal-tip groups and the single plastic-tip group. After brushing with dentifrice, the treated surfaces in all the treatment groups showed significantly fewer bacteria compared with the untreated surfaces in the control group, and the parts of the surfaces left untreated in the test groups. Within the limits of this study, treatment of titanium fixture surfaces with ultrasonic metal, plastic, or carbon tips significantly enhanced the bacterial removal efficacy of brushing. Thorough instrumentation that smooths the whole exposed surface may facilitate maintenance of the implants.

  16. Effect of bonding material, etching time and silane on the bond strength of metallic orthodontic brackets to ceramic.

    PubMed

    Costa, Ana Rosa; Correr, Américo Bortolazzo; Puppin-Rontani, Regina Maria; Vedovello, Silvia Amélia; Valdrighi, Heloísa Cristina; Correr-Sobrinho, Lourenço; Vedovello Filho, Mário

    2012-01-01

    The purpose of this study was to evaluate the bond strength of metallic orthodontic brackets to feldspathic ceramic with different etching times, bonding materials and with or without silane application. Cylinders of feldspathic ceramic were etched with 10% hydrofluoric acid for 20 or 60 s. For each etching time, half of the cylinders received two layers of silane. Metallic brackets were bonded to the cylinders using Transbond XT (3M Unitek) or Fuji Ortho LC (GC). Light-activation was carried out with total exposure time of 40 s using UltraLume 5. Shear bond strength testing was performed after 24 h storage. Data were submitted to three-way ANOVA and Tukey's test (α=0.05). The adhesive remnant index (ARI) was used to evaluate the amount of adhesive remaining on the ceramic surface at ×8 magnification. Specimens etched for 60 s had significantly higher bond strength compared with 20 s. The application of silane was efficient in increasing the shear bond strength between ceramic and both fixed materials. Transbond XT showed significantly higher (p<0.05) bond strength than Fuji Orth LC. There was a predominance of ARI score 0 (clean ceramic failure surface) for all groups, with an increase in scores 1, 2 and 3 (adhesive material increasingly present on ceramic failure aspect) for the 60-s etching time. In conclusion, 60-s etching time, silane and Transbond XT improved significantly the shear bond strength of brackets to ceramic.

  17. Unveiling the shape-diversified silicon nanowires made by HF/HNO3 isotropic etching with the assistance of silver.

    PubMed

    Chen, Chia-Yun; Wong, Ching-Ping

    2015-01-21

    Hydrofluoric (HF)/nitric (HNO3)/acetic (CH3COOH) acid, normally referred to as the HNA method, is a widely utilized technique for performing isotropic etching on silicon (Si) in industrial Si-based processing and device construction. Here, we reported a novel etching strategy based on a HF/HNO3 process with the assistance of silver (Ag) nano-seeds, offering good controllability in preparing diversified Si nanostructure arrays with particularly smooth top surfaces. The involved mechanism was visualized by systematically investigating both the time and temperature dependencies on the etching kinetics with various ratios of HF to HNO3. Moreover, by testing different Ag(+)-ion containing oxidants on Si etching, we have re-examined the state-of-the-art metal-assisted chemical etching (MaCE) using HF/AgNO3 etchants. In contrast with previous reports, we found that the interplay of hole injections from Ag(+) and NO3(-) ions to the valence band of Si collectively contributes to the unidirectional dissolution of Si. Finally, we explored the engineering of the Ag nano-seeds to regularize the orientation of the etched nanowires formed on non-Si (100) wafers, which further provides a reliable pathway for constructing the desired morphologies of one-dimensional Si nanostructures regardless of wafer orientation.

  18. Comparison of bond strength and surface morphology of dental enamel for acid and Nd-YAG laser etching

    NASA Astrophysics Data System (ADS)

    Parmeswearan, Diagaradjane; Ganesan, Singaravelu; Ratna, P.; Koteeswaran, D.

    1999-05-01

    Recently, laser pretreatment of dental enamel has emerged as a new technique in the field of orthodontics. However, the changes in the morphology of the enamel surface is very much dependent on the wavelength of laser, emission mode of the laser, energy density, exposure time and the nature of the substance absorbing the energy. Based on these, we made a comparative in vitro study on laser etching with acid etching with reference to their bond strength. Studies were conducted on 90 freshly extracted, non carious, human maxillary or mandibular anteriors and premolars. Out of 90, 60 were randomly selected for laser irradiation. The other 30 were used for conventional acid pretreatment. The group of 60 were subjected to Nd-YAG laser exposure (1060 nm, 10 Hz) at differetn fluences. The remaining 30 were acid pretreated with 30% orthophosphoric acid. Suitable Begg's brackets were selected and bound to the pretreated surface and the bond strength were tested using Instron testing machine. The bond strength achieved through acid pretreatment is found to be appreciably greater than the laser pretreated tooth. Though the bond strength achieved through the acid pretreated tooth is found to be significantly greater than the laser pretreated specimens, the laser pretreatement is found to be successful enough to produce a clinically acceptable bond strength of > 0.60 Kb/mm. Examination of the laser pre-treated tooth under SEM showed globule formation which may produce the mechanical interface required for the retention of the resin material.

  19. Effect of fluoride on the morphology of calcium phosphate crystals grown on acid-etched human enamel.

    PubMed

    Fan, Y; Sun, Z; Moradian-Oldak, J

    2009-01-01

    The aim of this study was to examine the effect of fluoride ion concentration on the morphology of calcium phosphate crystals grown on acid-etched enamel as a model for tooth enamel erosion. Samples were immersed in calcification solution for 16 h and changes in crystal morphology were monitored by field emission scanning electron microscopy. Without fluoride, plate-like octacalcium phosphate crystals (20 nm thick, 2-10 microm wide) were formed. With 1-10 mg/l fluoride, arrays of denser needle-like nanocrystals (20-30 nm wide, >500 nm in length) were formed. We conclude that there is a minimal fluoride concentration (1 mg/l) that dramatically affects the morphology of calcium phosphate crystals grown on etched enamel in vitro.

  20. Effect of Fluoride on the Morphology of Calcium Phosphate Crystals Grown on Acid-Etched Human Enamel

    PubMed Central

    Fan, Y.; Sun, Z.; Moradian-Oldak, J.

    2009-01-01

    The aim of this study was to examine the effect of fluoride ion concentration on the morphology of calcium phosphate crystals grown on acid-etched enamel as a model for tooth enamel erosion. Samples were immersed in calcification solution for 16 h and changes in crystal morphology were monitored by field emission scanning electron microscopy. Without fluoride, plate-like octacalcium phosphate crystals (20 nm thick, 2–10 μm wide) were formed. With 1–10 mg/l fluoride, arrays of denser needle-like nanocrystals (20–30 nm wide, >500 nm in length) were formed. We conclude that there is a minimal fluoride concentration (1 mg/l) that dramatically affects the morphology of calcium phosphate crystals grown on etched enamel in vitro. PMID:19321991

  1. Micro/nanofabrication of poly({sub L}-lactic acid) using focused ion beam direct etching

    SciTech Connect

    Oyama, Tomoko Gowa; Nagasawa, Naotsugu; Taguchi, Mitsumasa; Hinata, Toru; Washio, Masakazu; Oshima, Akihiro; Tagawa, Seiichi

    2013-10-14

    Micro/nanofabrication of biocompatible and biodegradable poly({sub L}-lactic acid) (PLLA) using focused Ga ion beam direct etching was evaluated for future bio-device applications. The fabrication performance was determined with different ion fluences and fluxes (beam currents), and it was found that the etching speed and fabrication accuracy were affected by irradiation-induced heat. Focused ion beam (FIB)-irradiated surfaces were analyzed using micro-area X-ray photoelectron spectroscopy. Owing to reactions such as the physical sputtering of atoms and radiation-induced decomposition, PLLA was gradually carbonized with increasing C=C bonds. Controlled micro/nanostructures of PLLA were fabricated with C=C bond-rich surfaces expected to have good cell attachment properties.

  2. Effect of a self-etching primer and phosphoric acid etching on the bond strength of 4-META/MMA-TBB resin to human enamel.

    PubMed

    Nogawa, Hiroshi; Koizumi, Hiroyasu; Saiki, Osamu; Hiraba, Haruto; Nakamura, Mitsuo; Matsumura, Hideo

    2015-01-01

    The purpose of this study was to evaluate the shear bond strength and durability of 4-META/MMA-TBB resin to human enamel. A self-etching primer that contained 4-META (Teeth Primer, TP) and 35-45% or 60-65% concentrations of phosphoric acid (K-Etchant Gel, KE, and Super Bond C&B Red Activator, RA) were used as the surface treatment agents. A methyl methacrylate (MMA)-based self-polymerizing resin (Super-Bond C&B) was used as a luting agent. The shear bond strength was determined both pre and post thermocycling. The results were statistically analyzed with a non-parametric procedure. The post-thermocycling shear bond strength of the TP group was significantly higher than that of other groups, and that of the KE group was significantly higher compared with the RA group. These results demonstrated that 4-META was effective. Furthermore, when the degree of tooth demineralization was compared, surface treatment with less demineralization using TP was the most effective treatment.

  3. Square-wave anodic-stripping voltammetric determination of Cd, Pb, and Cu in a hydrofluoric acid solution of siliceous spicules of marine sponges (from the Ligurian Sea, Italy, and the Ross Sea, Antarctica).

    PubMed

    Truzzi, C; Annibaldi, A; Illuminati, S; Bassotti, E; Scarponi, G

    2008-09-01

    Square-wave anodic-stripping voltammetry (SWASV) was set up and optimized for simultaneous determination of cadmium, lead, and copper in siliceous spicules of marine sponges, directly in the hydrofluoric acid solution (approximately 0.55 mol L(-1) HF, pH approximately 1.9). A thin mercury-film electrode (TMFE) plated on to an HF-resistant epoxy-impregnated graphite rotating-disc support was used. The optimum experimental conditions, evaluated also in terms of the signal-to-noise ratio, were as follows: deposition potential -1100 mV vs. Ag/AgCl, KCl 3 mol L(-1), deposition time 3-10 min, electrode rotation 3000 rpm, SW scan from -1100 mV to +100 mV, SW pulse amplitude 25 mV, frequency 100 Hz, DeltaE(step) 8 mV, t(step) 100 ms, t(wait) 60 ms, t(delay) 2 ms, t(meas) 3 ms. Under these conditions the metal peak potentials were Cd -654 +/- 1 mV, Pb -458 +/- 1 mV, Cu -198 +/- 1 mV. The electrochemical behaviour was reversible for Pb, quasi-reversible for Cd, and kinetically controlled (possibly following chemical reaction) for Cu. The linearity of the response with concentration was verified up to approximately 4 microg L(-1) for Cd and Pb and approximately 20 microg L(-1) for Cu. The detection limits were 5.8 ng L(-1), 3.6 ng L(-1), and 4.3 ng L(-1) for Cd, Pb, and Cu, respectively, with t(d) = 5 min. The method was applied for determination of the metals in spicules of two specimens of marine sponges (Demosponges) from the Portofino natural reserve (Ligurian Sea, Italy, Petrosia ficiformis) and Terra Nova Bay (Ross Sea, Antarctica, Sphaerotylus antarcticus). The metal contents varied from tens of ng g(-1) to approximately 1 microg g(-1), depending on the metal considered and with significant differences between the two sponge species.

  4. Influence of duration of phosphoric acid pre-etching on bond durability of universal adhesives and surface free-energy characteristics of enamel.

    PubMed

    Tsujimoto, Akimasa; Barkmeier, Wayne W; Takamizawa, Toshiki; Watanabe, Hidehiko; Johnson, William W; Latta, Mark A; Miyazaki, Masashi

    2016-08-01

    The purpose of this study was to evaluate the influence of duration of phosphoric acid pre-etching on the bond durability of universal adhesives and the surface free-energy characteristics of enamel. Three universal adhesives and extracted human molars were used. Two no-pre-etching groups were prepared: ground enamel; and enamel after ultrasonic cleaning with distilled water for 30 s to remove the smear layer. Four pre-etching groups were prepared: enamel pre-etched with phosphoric acid for 3, 5, 10, and 15 s. Shear bond strength (SBS) values of universal adhesive after no thermal cycling and after 30,000 or 60,000 thermal cycles, and surface free-energy values of enamel surfaces, calculated from contact angle measurements, were determined. The specimens that had been pre-etched showed significantly higher SBS and surface free-energy values than the specimens that had not been pre-etched, regardless of the aging condition and adhesive type. The SBS and surface free-energy values did not increase for pre-etching times of longer than 3 s. There were no significant differences in SBS values and surface free-energy characteristics between the specimens with and without a smear layer. The results of this study suggest that phosphoric acid pre-etching of enamel improves the bond durability of universal adhesives and the surface free-energy characteristics of enamel, but these bonding properties do not increase for phosphoric acid pre-etching times of longer than 3 s.

  5. Vacuum-jacketed hydrofluoric acid solution calorimeter

    USGS Publications Warehouse

    Robie, R.A.

    1965-01-01

    A vacuum-jacketed metal calorimeter for determining heats of solution in aqueous HF was constructed. The reaction vessel was made of copper and was heavily gold plated. The calorimeter has a cooling constant of 0.6 cal-deg -1-min-1, approximately 1/4 that of the air-jacketed calorimeters most commonly used with HF. It reaches equilibrium within 10 min after turning off the heater current. Measurements of the heat of solution of reagent grade KCl(-100 mesh dried 2 h at 200??C) at a mole ratio of 1 KCl to 200 H2O gave ??H = 4198??11 cal at 25??C. ?? 1965 The American Institute of Physics.

  6. Effect of pretreatment with mildly acidic hypochlorous acid on adhesion to caries-affected dentin using a self-etch adhesive.

    PubMed

    Kunawarote, Sitthikorn; Nakajima, Masatoshi; Foxton, Richard M; Tagami, Junji

    2011-02-01

    Caries-affected dentin is covered with a thicker and organically enriched smear layer than normal dentin. This may affect the demineralization ability and the infiltration of self-etch adhesives, thus reducing the efficacy of bonding to caries-affected dentin. This study evaluated the adhesion of a two-step self-etching adhesive to normal and caries-affected dentin after pretreatment with mildly acidic hypochlorous acid (HOCl) solutions. We used a microtensile bond strength (μTBS) test to compare the μTBS of Clearfil SE Bond to either caries-affected dentin or to normal dentin, after pretreatment for 5 s with one of three solutions (806 mM NaOCl, or 0.95 or 1.91 mM HOCl). The μTBS of the self-etch adhesive was significantly lower to caries-affected dentin than to normal dentin. Pretreatment with 0.95 mM HOCl improved the μTBS of the self-etch adhesive to caries-affected dentin, but there was no significant difference compared with normal dentin. On the other hand, pretreatment with 806 mM NaOCl or 1.91 mM HOCl did not demonstrate a significant improvement in the μTBS to caries-affected dentin. None of the pretreatments demonstrated a negative effect on adhesion to normal dentin.

  7. Bond strength of composite to dentin: effect of acid etching and laser irradiation through an uncured self-etch adhesive system

    NASA Astrophysics Data System (ADS)

    Castro, F. L. A.; Carvalho, J. G.; Andrade, M. F.; Saad, J. R. C.; Hebling, J.; Lizarelli, R. F. Z.

    2014-08-01

    This study evaluated the effect on micro-tensile bond strength (µ-TBS) of laser irradiation of etched/unetched dentin through an uncured self-etching adhesive. Dentinal surfaces were treated with Clearfil SE Bond Adhesive (CSE) either according to the manufacturer’s instructions (CSE) or without applying the primer (CSE/NP). The dentin was irradiated through the uncured adhesive, using an Nd:YAG laser at 0.75 or 1 W power settings. The adhesive was cured, composite crowns were built up, and the teeth were sectioned into beams (0.49 mm2) to be stressed under tension. Data were analyzed using one-way ANOVA and Tukey statistics (α = 5%). Dentin of the fractured specimens and the interfaces of untested beams were observed under scanning electron microscopy (SEM). The results showed that non-etched irradiated surfaces presented higher µ-TBS than etched and irradiated surfaces (p < 0.05). Laser irradiation alone did not lead to differences in µ-TBS (p > 0.05). SEM showed solidification globules on the surfaces of the specimens. The interfaces were similar on irradiated and non-irradiated surfaces. Laser irradiation of dentin through the uncured adhesive did not lead to higher µ-TBS when compared to the suggested manufacturer’s technique. However, this treatment brought benefits when performed on unetched dentin, since bond strengths were higher when compared to etched dentin.

  8. Morphological evolution of silver nanoparticles and its effect on metal-induced chemical etching of silicon.

    PubMed

    Baek, Seong-Ho; Kong, Bo Hyun; Cho, Hyung Koun; Kim, Jae Hyun

    2013-05-01

    In this report, we have demonstrated the morphological evolution of the silver nanoparticles (AgNPs) by controlling the growth conditions and its effect on morphology of silicon (Si) during metal-induced electroless etching (MICE). Self-organized AgNPs with peculiarly shape were synthesized by an electroless plating method in a conventional aqueous hydrofluoric acid (HF) and silver nitrate (AgNO3) solution. AgNP nuclei were densely created on Si wafer surface, and they had a strong tendency to merge and form continuous metal films with increasing AgNO3 concentrations. Also, we have demonstrated that the fabrication of aligned Si nanowire (SiNW) arrays in large area of p-Si (111) substrates by MICE in a mixture of HF and hydrogen peroxide (H2O2) solution. We have found that the morphology of the initial AgNPs and oxidant concentration (H2O2) greatly influence on the shape of the SiNW etching profile. The morphological results showed that AgNP shapes were closely related to the etching direction of SiNWs, that is, the spherical AgNPs preferred to move vertical to the Si substrate, whereas non-spherical AgNPs changed their movement to the [100] directions. In addition, as the etching activity was increased at higher H2O2 concentrations, AgNPs had a tendency to move from the original [111] direction to the energetically preferred [100] direction.

  9. A comparative study of shear bond strength of orthodontic bracket after acid-etched and Er:YAG treatment on enamel surface

    NASA Astrophysics Data System (ADS)

    Leão, Juliana C.; Mota, Cláudia C. B. O.; Cassimiro-silva, Patricia F.; Gomes, Anderson S. L.

    2016-02-01

    This study aimed to evaluate the shear bond strength (SBS) of teeth prepared for orthodontic bracket bonding with 37% phosphoric acid and Er:YAG laser. Forty bovine incisors were divided into two groups. In Group I, the teeth were conditioned with 37% phosphoric acid and brackets were bonded with Transbond XT; in Group II, the teeth were irradiated with Er:YAG and bonding with Transbond XT. After SBS test, the adhesive remnant index was determined. Adhesion to dental hard tissues after Er:YAG laser etching was inferior to that obtained after acid etching but exceeded what is believed to be clinically sufficient strength, and therefore can be used in patients.

  10. Effect of ceramic etching protocols on resin bond strength to a feldspar ceramic.

    PubMed

    Bottino, M A; Snellaert, A; Bergoli, C D; Özcan, M; Bottino, M C; Valandro, L F

    2015-01-01

    This study sought to evaluate the resin microtensile bond strength (MTBS) stability of a leucite-reinforced ceramic after different ceramic etching protocols. The microtensile test had 40 ceramic blocks (5×5×6 mm) assigned to five groups (n=8), in accordance with the following surface etching protocols: NE nonetched (control); 9HF: hydrofluoric (HF) acid etching (9%HF)+wash/dry; 4HF: 4%HF+wash/dry; 5HF: 5%HF+wash/dry; and 5HF+N: 5%HF+neutralizer+wash/dry+ultrasonic-cleaning. Etched ceramic surfaces were treated with a silane agent. Next, resin cement blocks were built on the prepared ceramic surface and stored for 24 hours in distilled water at 37°C. The specimens were then sectioned to obtain microtensile beams (32/block), which were randomly assigned to the following conditions, nonaged (immediate test) and aged (water storage for 150 days plus 12,000 thermal cycles), before the microtensile test. Bond strength data were submitted to one-way analysis of variance and Tukey test (α=0.05). Additional ceramic samples were subjected to the different ceramic etching protocols and evaluated using a scanning electron microscope (n=2) and atomic force microscopy (n=2). Aging led to a statistically significant decrease in the MTBS for all groups, except the untreated one (NE). Among the groups submitted to the same aging conditions, the untreated (NE) revealed inferior MTBS values compared to the 9HF and 4HF groups. The 5HF and 5HF+N groups had intermediate mean values, being statistically similar to the higher values presented by the 9HF and 4HF groups and to the lower value associated with the NE group. The neutralization procedure did not enhance the ceramic/resin cement bond strength. HF acid etching is a crucial step in resin/ceramic bonding.

  11. Micromorphology of ceramic etching pattern for two CAD-CAM and one conventional feldspathic porcelain and need for post-etching cleaning.

    PubMed

    Onisor, Ioana; Rocca, Giovanni Tommaso; Krejci, Ivo

    2014-01-01

    The aim of this in vitro study was to observe the effect of hydrofluoric acid (HF) on the surface of two glass ceramics for Cerec and to compare it with the effect on a conventional glass ceramic. Discs were cut from a feldspathic ceramic block (VitaMKII) and from a leucite reinforced glass ceramic (IPS EMPRESS CAD) for Cerec. 5% and 9% HF concentrations were used during 1 min and 2 min each. Afterwards samples were thoroughly water rinsed for 30 s. Half of the 9% HF 1 min samples were subsequently submitted to a complex post-etching cleaning. All samples were observed under a scanning electron microscope (SEM). The conventional feldspathic ceramic samples were built up on a refractory die and a platinum foil. They were treated with 9% HF for 2 min and water rinsed for 30 s. Half of the samples were submitted to the same post-etching cleaning protocol. All samples were examined under SEM and EDX. The Cerec ceramic samples and the platinum foil ones were clean and free of any precipitate after 30 s of water rinsing. Acid concentration, times of application and the postetching cleaning treatment did not influence the cleanliness of the samples. A thick layer of deposit was observed only on the refractory die samples. This was only diminished after the post-etching treatment. The EDX analysis detected the presence of fluoride (F) only on the refractory die samples.

  12. Surface Topographical Changes of a Failing Acid-Etched Long-Term in Function Retrieved Dental Implant.

    PubMed

    Monje, Alberto; González-García, Raúl; Fernández-Calderón, María Coronada; Hierro-Oliva, Margarita; González-Martín, María Luisa; Del Amo, Fernando Suarez-Lopez; Galindo-Moreno, Pablo; Wang, Hom-Lay; Monje, Florencio

    2016-02-01

    The aim of the present study was to report the main topographical and chemical changes of a failing 18-year in function retrieved acid-etching implant in the micro- and nanoscales. A partially edentulous 45 year old rehabilitated with a dental implant at 18 years of age exhibited mobility. After careful examination, a 3.25 × 13-mm press-fit dental implant was retrieved. Scanning electron microscope (SEM) analysis was carried out to study topographical changes of the retrieved implant compared with an unused implant with similar topographical characteristics. Moreover, X-ray photoelectron spectroscopy (XPS) analysis was used to study the surface composition of the retrieved failing implant. Clear changes related to the dual dioxide layer are present as visible in ≥×500 magnification. In addition, it was found that, for the retrieved implant, the surface composition consisted mainly of Ti2p, O1s, C1s, and Al2p. Also, a meaningful decrease of N and C was noticed, whereas the peaks of Ti2p, Al2p, and O1s increased when analyzing deeper (up to ×2000s) in the sample. It was shown that the superficial surface of a retrieved press-fit dual acid-etched implant 18 years after placement is impaired. However, the causes and consequences for these changes cannot be determined.

  13. Investigations of AlGaN/GaN HFETs utilizing post-metallization etching by nitric acid treatment

    NASA Astrophysics Data System (ADS)

    Chou, Bo-Yi; Hsu, Wei-Chou; Lee, Ching-Sung; Liu, Han-Yin; Tsai, Chih-Ming; Ho, Chiu-Sheng

    2013-07-01

    This work investigates AlGaN/GaN heterostructure field-effect transistors (HFETs) processed by using a simple post-metallization etching (PME) treatment. Decreased gate length (LG) can be achieved by using nitric acid (HNO3) PME treatment owing to the high etching selectivity of HNO3 of Ni against the Au and GaN layer. Influences on LG, etched gate profiles and device characteristics with respect to different PME processing parameters by HNO3 treatment are systematically investigated. Optimum device performance is obtained as LG was reduced to 0.5 µm by using a 1 µm long gate mask by immersing the device into a 45% diluted HNO3 solution for 35 s. Improved device performances, including maximum drain-source current density (IDS, max: 657.6 mA mm-1 → 898.5 mA mm-1), drain-source saturation current density at zero gate bias (IDSS0: 448.3 mA mm-1 → 653.4 mA mm-1), maximum extrinsic transconductance (gm, max: 158.3 mS mm-1 → 219.2 mS mm-1), unity-gain cut-off frequency (fT: 12.35 GHz → 22.05 GHz), maximum oscillation frequency (fmax: 17.55 GHz → 29.4 GHz) and power-added efficiency (P.A.E.: 26.3% → 34.5%) compared to the untreated reference device, have been successfully achieved.

  14. Relation between etch-pit morphology and step retreat velocity on a calcite surface in aspartic acid solution

    NASA Astrophysics Data System (ADS)

    Yoshino, Toru; Kagi, Hiroyuki; Kamiya, Natsumi; Kokawa, Ryohei

    2010-04-01

    Effects of L-aspartic acid ( L-Asp) on dissolution of calcite were investigated. The step retreat velocity and dissolution rate of calcite were measured simultaneously using an AFM flow-through system. The etch-pit morphology of calcite was observed using confocal laser scanning microscopy. Results show that the etch-pit morphologies changed drastically depending on the L-Asp concentration ([ L-Asp]) in the order of rhomboidal, pentagonal, and triangular (not perfectly, but retaining an extra step). The change in obtuse step directions and appearance of the [0 1 0] step triggered these morphological changes. Addition of L-Asp accelerated all step retreats at [ L-Asp]<0.01 M, which implied the effect of L-Asp on the diffusive barrier. In contrast, at [ L-Asp]>0.01 M, L-Asp inhibited the retreats of obtuse steps and [0 1 0] step, although the retreat velocities of acute steps were constant irrespective of [ L-Asp]. These results suggest that the directional changes and the inhibition of retreat velocities of obtuse steps were attributed to the generation of [ 4 1 1] and [4 5 1] steps caused by L-Asp. Moreover, we confirmed the preferential effects of L-Asp on the [4 8 1] + to [ 4 4 1] ± step edge, and proposed the preferential effects of L-Asp on the [ 4 1 1] to [4 5 1] step edge.

  15. Comparison of shear bond strength and surface structure between conventional acid etching and air-abrasion of human enamel.

    PubMed

    Olsen, M E; Bishara, S E; Damon, P; Jakobsen, J R

    1997-11-01

    Recently, air-abrasion technology has been examined for potential applications within dentistry, including the field of orthodontics. The purpose of this study was to compare the traditional acid-etch technique with an air-abrasion surface preparation technique, with two different sizes of abrading particles. The following parameters were evaluated: (a) shear bond strength, (b) bond failure location, and (c) enamel surface preparation, as viewed through a scanning electron microscope. Sixty extracted human third molars were pumiced and divided into three groups of 20. The first group was etched with a 37% phosphoric acid gel for 30 seconds, rinsed for 30 seconds, and dried for 20 seconds. The second and third groups were air-abraded with (a) a 50 microm particle and (b) a 90 microm particle of aluminum oxide, with the Micro-etcher microabrasion machine (Danville Engineering Inc.). All three groups had molar stainless steel orthodontic brackets bonded to the buccal surface of each tooth with Transbond XT bonding system (3M Unitek). A Zwick Universal Testing Machine (Calitek Corp.) was used to determine shear bond strengths. The analysis of variance was used to compare the three groups. The Adhesive Remnant Index (ARI) was used to evaluate the residual adhesive on the enamel after bracket removal. The chi square test was used to evaluate differences in the ARI scores among the groups. The significance for all tests was predetermined at p < or = 0.05. The results indicated that there was a significant difference in shear bond strength among the three groups (p = 0.0001). The Duncan Multiple Range test showed a significant decrease in shear bond strength in the air-abraded groups. The chi square test revealed significant differences among the ARI scores of the acid-etched group and the air-abraded groups (chi(2) = 0.0001), indicating no adhesive remained on the enamel surface after debonding when air-abrasion was used. In conclusion, the current findings indicate that

  16. UV-induced graft polymerization of acrylic acid in the sub-micronchannels of oxidized PET track-etched membrane

    NASA Astrophysics Data System (ADS)

    Korolkov, Ilya V.; Mashentseva, Anastassiya A.; Güven, Olgun; Taltenov, Abzal A.

    2015-12-01

    In this article, we report on functionalization of track-etched membrane based on poly(ethylene terephthalate) (PET TeMs) oxidized by advanced oxidation systems and by grafting of acrylic acid using photochemical initiation technique for the purpose of increasing functionality thus expanding its practical application. Among advanced oxidation processes (H2O2/UV) system had been chosen to introduce maximum concentration of carboxylic acid groups. Benzophenone (BP) photo-initiator was first immobilized on the surfaces of cylindrical pores which were later filled with aq. acrylic acid solution. UV-irradiation from both sides of PET TeMs has led to the formation of grafted poly(acrylic acid) (PAA) chains inside the membrane sub-micronchannels. Effect of oxygen-rich surface of PET TeMs on BP adsorption and subsequent process of photo-induced graft polymerization of acrylic acid (AA) were studied by ESR. The surface of oxidized and AA grafted PET TeMs was characterized by UV-vis, ATR-FTIR, XPS spectroscopies and by SEM.

  17. An In Vitro Comparison of the Bond Strength of Composite to Superficial and Deep Dentin, Treated With Er:YAG Laser Irradiation or Acid-Etching.

    PubMed

    Alaghehmand, Homayoon; Nezhad Nasrollah, Fatemeh; Nokhbatolfoghahaei, Hanieh; Fekrazad, Reza

    2016-01-01

    Introduction: The aim of this study was to compare the micro-shear bond strength of composite resin on superficial and deep dentin after conditioning with phosphoric acid and Erbium-Doped Yttrium Aluminum Garnet (Er:YAG) laser. Methods: Thirty human molars were selected, roots were removed and crowns were bisected to provide a total of 60 half-crowns. Specimens were ground to expose superficial and deep dentin. Samples were assigned to six groups: (1) AS (acid etching of superficial dentin); (2) AD (acid etching of deep dentin); (3) LS (Er:YAG laser irradiation on superficial dentin); (4) LD (Er:YAG laser irradiation on deep dentin); (5) LAS (Er:YAG laser irradiation on superficial dentin followed by acid etching); (6) LAD (Er:YAG laser irradiation on deep dentin followed by acid etching) The adhesive protocol was performed. Samples were thermocycled and micro-shear bond strength was tested to failure. The data were submitted to statistical analysis with one-way analysis of variance (ANOVA) and Tukey post hoc test. Results: The AS group, demonstrated the greatest amount of micro-shear bond strength. Statistical analysis showed a decrease in bond strength in laser-treated groups which was more significant for deep dentin. Conclusion: Preparation of dentin with laser did not improve bonding to superficial and deep dentin.

  18. An In Vitro Comparison of the Bond Strength of Composite to Superficial and Deep Dentin, Treated With Er:YAG Laser Irradiation or Acid-Etching

    PubMed Central

    Alaghehmand, Homayoon; Nezhad Nasrollah, Fatemeh; Nokhbatolfoghahaei, Hanieh; Fekrazad, Reza

    2016-01-01

    Introduction: The aim of this study was to compare the micro-shear bond strength of composite resin on superficial and deep dentin after conditioning with phosphoric acid and Erbium-Doped Yttrium Aluminum Garnet (Er:YAG) laser. Methods: Thirty human molars were selected, roots were removed and crowns were bisected to provide a total of 60 half-crowns. Specimens were ground to expose superficial and deep dentin. Samples were assigned to six groups: (1) AS (acid etching of superficial dentin); (2) AD (acid etching of deep dentin); (3) LS (Er:YAG laser irradiation on superficial dentin); (4) LD (Er:YAG laser irradiation on deep dentin); (5) LAS (Er:YAG laser irradiation on superficial dentin followed by acid etching); (6) LAD (Er:YAG laser irradiation on deep dentin followed by acid etching) The adhesive protocol was performed. Samples were thermocycled and micro-shear bond strength was tested to failure. The data were submitted to statistical analysis with one-way analysis of variance (ANOVA) and Tukey post hoc test. Results: The AS group, demonstrated the greatest amount of micro-shear bond strength. Statistical analysis showed a decrease in bond strength in laser-treated groups which was more significant for deep dentin. Conclusion: Preparation of dentin with laser did not improve bonding to superficial and deep dentin. PMID:28144437

  19. Changes in the surface of bone and acid-etched and sandblasted implants following implantation and removal

    PubMed Central

    Eroglu, Cennet Neslihan; Ertugrul, Abdullah Seckin; Eskitascioglu, Murat; Eskitascioglu, Gurcan

    2016-01-01

    Objective: The aim of this study was to determine whether there are any changes in the surface of bone or implant structures following the removal of a screwed dental implant. Materials and Methods: For this, six individual samples of acid-etched and sandblasted implants from three different manufacturers’ implant systems were used. They were screwed in a D1 bovine bone, and they were removed after primary stabilization. The bone and implant surfaces are evaluated with scanning electron microscope. Results: Through examination of the surfaces of the bone prior to implantation and of the used and unused implant surfaces, it was found that inhomogeneity in the implant surface can cause microcracking in the bone. Conclusions: This is attributed to the stress induced during the implantation of self-tapping implants and suggests that a tap drill may be required in some instances to protect the implant surface. PMID:27011744

  20. Apparatus For Etching Or Depositing A Desired Profile Onto A Surface

    DOEpatents

    Rushford, Michael C.; Britten, Jerald A.

    2004-05-25

    An apparatus and method for modifying the surface of an object by contacting said surface with a liquid processing solution using the liquid applicator geometry and Marangoni effect (surface tension gradient-driven flow) to define and confine the dimensions of the wetted zone on said object surface. In particular, the method and apparatus involve contouring or figuring the surface of an object using an etchant solution as the wetting fluid and using real-time metrology (e.g. interferometry) to control the placement and dwell time of this wetted zone locally on the surface of said object, thereby removing material from the surface of the object in a controlled manner. One demonstrated manifestation is in the deterministic optical figuring of thin glasses by wet chemical etching using a buffered hydrofluoric acid solution and Marangoni effect.

  1. Photopolymerization of phosphoric acid ester-based self-etch dental adhesives

    PubMed Central

    ZHANG, Ying; WANG, Yong

    2014-01-01

    The objective of the study was to gain more understanding on the photopolymerization mechanism and the role of individual monomers in the polymerization behavior of a PAE-based self-etch adhesive system with the presence of HAp and water. The photo-polymerization process of the model adhesive system (2MP / HEMA) was monitored by using real-time attenuated total reflectance Fourier transform infrared (ATR/FT-IR) technique. The effect of monomer ratio, HAp incorporation, and water content were investigated. The degree of conversion (DC) and the polymerization rate (PR) of the adhesives were determined to evaluate the polymerization efficacy. The results showed that the DC and PR increased consistently as the 2MP content increased from 30% to 70%, while they declined drastically as the 2MP content was further elevated to 100%. The incorporation of HAp considerably increased the DC and PR; however, the increase in water content was found to have negative influence on the photopolymerization. PMID:23370865

  2. Effect of self-etching primer vs phosphoric acid etchant on bonding to bur-prepared dentin.

    PubMed

    Ogata, M; Harada, N; Yamaguchi, S; Nakajima, M; Tagami, J

    2002-01-01

    This study evaluated the effect of dentin conditioner on tensile bond strength to dentin prepared with different types of burs. A self-etching primer system, Mac-Bond II (MB, Tokuyama Dental) and a phosphoric acid etching system, Single Bond (SB, 3M) were used for conditioning. Twenty-four extracted intact human molars were ground flat to expose occlusal dentin. After the dentin surfaces were polished with #600 SiC paper, the teeth were randomly divided into a control group and three experimental groups according to the bur grits used: #600 SiC paper only as the control, fine cut steel bur (SB600), crosscut steel bur (SB703) and regular grit diamond bur (DB) mounted in a dental handpiece utilizing water cooling. The dentin surfaces were treated with one of two adhesive systems, then composite buildups were done with Clearfil AP-X (Kuraray Medical). After soaking the bond specimens for 24 hours in 37 degrees C water, multiple vertical serial sections (0.7 mm thick, 7-8 slices per one tooth) were made, trimmed to form an hour-glass shape with a 1.0 mm2 cross-section and tensile bond strengths were determined at a crosshead speed of 1 mm/minute. Statistical analysis was made using one and two-way ANOVA and Fisher's PLSD test (p<0.05). Six additional molars were used for SEM observations of the dentin surfaces of each group before and after treatment with the self-etching primer of MB, and another four teeth were used to observe the resin-dentin interface of each group of SB. Using MB, the DB group produced the lowest tensile bond strength (TBS) among the groups that received bur preparation, and there were no statistical differences among SB600, SB703 and the control. For SB, the TBS of SB703 was the highest, and there were no statistical differences among the other groups and the control. The influence of the method used to prepare dentin for micro-tensile bond strength testing was dependent on the adhesive system used.

  3. Unveiling the shape-diversified silicon nanowires made by HF/HNO3 isotropic etching with the assistance of silver

    NASA Astrophysics Data System (ADS)

    Chen, Chia-Yun; Wong, Ching-Ping

    2014-12-01

    Hydrofluoric (HF)/nitric (HNO3)/acetic (CH3COOH) acid, normally referred to as the HNA method, is a widely utilized technique for performing isotropic etching on silicon (Si) in industrial Si-based processing and device construction. Here, we reported a novel etching strategy based on a HF/HNO3 process with the assistance of silver (Ag) nano-seeds, offering good controllability in preparing diversified Si nanostructure arrays with particularly smooth top surfaces. The involved mechanism was visualized by systematically investigating both the time and temperature dependencies on the etching kinetics with various ratios of HF to HNO3. Moreover, by testing different Ag+-ion containing oxidants on Si etching, we have re-examined the state-of-the-art metal-assisted chemical etching (MaCE) using HF/AgNO3 etchants. In contrast with previous reports, we found that the interplay of hole injections from Ag+ and NO3- ions to the valence band of Si collectively contributes to the unidirectional dissolution of Si. Finally, we explored the engineering of the Ag nano-seeds to regularize the orientation of the etched nanowires formed on non-Si (100) wafers, which further provides a reliable pathway for constructing the desired morphologies of one-dimensional Si nanostructures regardless of wafer orientation.Hydrofluoric (HF)/nitric (HNO3)/acetic (CH3COOH) acid, normally referred to as the HNA method, is a widely utilized technique for performing isotropic etching on silicon (Si) in industrial Si-based processing and device construction. Here, we reported a novel etching strategy based on a HF/HNO3 process with the assistance of silver (Ag) nano-seeds, offering good controllability in preparing diversified Si nanostructure arrays with particularly smooth top surfaces. The involved mechanism was visualized by systematically investigating both the time and temperature dependencies on the etching kinetics with various ratios of HF to HNO3. Moreover, by testing different Ag

  4. Comparison of Shear Bond Strength of Orthodontic Brackets Bonded to Enamel Prepared By Er:YAG Laser and Conventional Acid-Etching

    PubMed Central

    Hosseini, M.H.; Namvar, F.; Chalipa, J.; Saber, K.; Chiniforush, N.; Sarmadi, S.; Mirhashemi, A.H.

    2012-01-01

    Introduction: The purpose of this study was to compare shear bond strength (SBS) of orthodontic brackets bonded to enamel prepared by Er:YAG laser with two different powers and conventional acid-etching. Materials and Methods: Forty-five human premolars extracted for orthodontic purposes were randomly assigned to three groups based on conditioning method: Group 1- conventional etching with 37% phosphoric acid; Group 2- irradiation with Er:YAG laser at 1 W; and Group 3- irradiation with Er:YAG laser at 1.5 W. Metal brackets were bonded on prepared enamel using a light-cured composite. All groups were subjected to thermocycling process. Then, the specimens mounted in auto-cure acryle and shear bond strength were measured using a universal testing machine with a crosshead speed of 0.5 mm per second. After debonding, the amount of resin remaining on the teeth was determined using the adhesive remnant index (ARI) scored 1 to 5. One-way analysis of variance was used to compare shear bond strengths and the Kruskal-Wallis test was performed to evaluate differences in the ARI for different etching types. Results: The mean and standard deviation of conventional acid-etch group, 1W laser group and 1.5W laser group was 3.82 ± 1.16, 6.97 ± 3.64 and 6.93 ± 4.87, respectively. Conclusion: The mean SBS obtained with an Er:YAG laser operated at 1W or 1.5W is approximately similar to that of conventional etching. However, the high variability of values in bond strength of irradiated enamel should be considered to find the appropriate parameters for applying Er:YAG laser as a favorable alternative for surface conditioning. PMID:22924098

  5. Evaluation of modifying the bonding protocol of a new acid-etch primer on the shear bond strength of orthodontic brackets.

    PubMed

    Ajlouni, Raed; Bishara, Samir E; Oonsombat, Charuphan; Denehy, Gerald E

    2004-06-01

    The purpose of the study was to evaluate the shear bond strength of orthodontic brackets when light curing both the self-etch primer and the adhesive in one step. Fourty eight teeth were bonded with self-etch primer Angel I (3M/ESPE, St Paul, Minn) and divided into three groups. In group I (control), 16 teeth were stored in deionized water for 24 hours before debonding. In group II, 16 teeth were debonded within half-an-hour to simulate when the initial archwires were ligated. In group III, 16 additional teeth were bonded using exactly the same procedure as in groups I and II, but the light cure used for 10 seconds after applying the acid-etch primer was eliminated, and the light cure used for 20 seconds after the precoated bracket was placed over the tooth. This saved at least two minutes of the total time of the bonding procedure. The teeth in this group were also debonded within half-an-hour from the time of initial bonding. The teeth debonded after 24 hours of water storage at 37 degrees C had a mean shear bond strength of 6.0 +/- 3.5 MPa, the group that was debonded within half-an-hour of two light exposures had a mean shear bond strength of 5.9 +/- 2.7 MPa, and the mean for the group with only one light cure exposure was 4.3 +/- 2.6 MPa. Light curing the acid-etch primer together with the adhesive after placing the orthodontic bracket did not significantly diminish the shear bond strength as compared with light curing the acid-etch primer and the adhesive separately.

  6. From acid etching treatments to tribocorrosive properties of dental implants: do some experimental results on surface treatments have an influence on the tribocorrosion behaviour of dental implants?

    NASA Astrophysics Data System (ADS)

    Geringer, Jean; Demanget, Nicolas; Pellier, Julie

    2013-10-01

    Surface treatments of dental implants aim at promoting osseointegration, i.e. the anchorage of the metallic part. Titanium-, grade II-V, based material is used as a bulk material for dental implants. For promoting the anchorage of this metallic biomaterial in human jaw, some strategies have been applied for improving the surface state, i.e. roughness, topography and coatings. A case study, experimental study, is described with the method of acid etching on titanium grade 4, CpTi. The main goal is to find the right proportion in a mixture of two acids in order to obtain the best surface state. Finally, a pure theoretical prediction is quite impossible and some experimental investigations are necessary to improve the surface state. The described acid etching is compared with some other acid etching treatments and some coatings available on dental implants. Thus, the discussion is focused on the tribocorrosion behaviour of titanium-based materials. The purpose of the coating is that the lifetime under tribocorrosion is limited. Moreover, the surgery related to the implantation has a huge impact on the stability of dental implants. Thus, the performance of dental implants depends on factors related to surgery (implantation) that are difficult to predict from the biomaterial characteristics. From the tribocorrosion point of view, i.e. during the mastication step, the titanium material is submitted to some deleterious factors that cause the performance of dental implants to decrease.

  7. Effect of etching with cysteamine assisted phosphoric acid on gallium nitride surface oxide formation

    NASA Astrophysics Data System (ADS)

    Wilkins, S. J.; Paskova, T.; Ivanisevic, A.

    2013-08-01

    In-situ functionalization of polar GaN was performed by adding cysteamine to a phosphoric acid etchant in order to study its effect on photoluminescence and oxide formation on the surfaces. The functionalization was characterized by atomic force microscopy, x-ray photoelectron spectroscopy, photoluminescence (PL), and water contact angle measurements. Two sets of polar GaN samples with different dislocation densities were evaluated, thin GaN layers residing on sapphire and thick free-standing GaN separated from sapphire substrate aiming to reveal the effect of material quality on in-situ functionalization. The addition of cysteamine to the phosphoric acid solution was found to result in: (i) decreased surface roughness, (ii) no change to hydrophobicity, (iii) decreased oxygen content especially at high-temperature treatments. The effect of the in-situ functionalization on the PL efficiency was more pronounced in the free-standing sample than in the film residing on the sapphire, which was attributed to a higher crystal quality free from strain.

  8. Fabrication, characterization, and biological assessment of multilayer DNA coatings on sandblasted-dual acid etched titanium surface.

    PubMed

    Liu, Li; Song, Li-Na; Yang, Guo-Li; Zhao, Shi-Fang; He, Fu-Ming

    2011-06-01

    As local gene therapy has received attention, immobilizing functional gene onto irregular oral implant surface has become an advanced challenge. Electrostatic layer-by-layer (LBL) assembly technique could achieve this goal and allow local and efficient administration of genes to the target cells. In this study, multilayers of cationic lipid/plasmid DNA (pEGFP-C1) complex (LDc) and anionic hyaluronic acid were assembled onto sandblasted-dual acid etched titanium disks by the LBL technique. Surface characteristics of the coatings were performed by x-ray photospectroscopy (XPS), contact angle measurements, and scanning electron microscopy (SEM). The cell biological characteristics of the coatings were evaluated by in vitro experiments. SEM results demonstrated that the porous titanium surface was gradually flattened with the increase of the multilayer. The XPS survey indicated that the N element was found from the coating. The coating degradation and pEGFP-C1 releasing kinetics showed that the more assembled layer numbers were, the larger the amount of DNA released in the first 30 h. MC3T3-E1 cells were cultured directly on the DNA-loaded surface. Higher enhanced green fluorescent protein (EGFP) expression efficiency was achieved by increasing the number of layers when cells were cultured after 24 or 72 h. The MC3T3-E1 cell viability on the surface of multilayer DNA coatings was significantly higher than that on control porous titanium surface. It was concluded that the approach established by the LBL technique had great potential in immobilizing gene coatings onto the porous titanium surface and subsequently influenced the function of the cultured cell.

  9. Petrologic and experimental evidence for the etching of garnets by organic acids in the upper Jurassic Morrision Formation, northwestern New Mexico.

    USGS Publications Warehouse

    Hansley, P.L.

    1987-01-01

    Etching of garnets and partial to complete dissolution of other aluminosilicate minerals were caused by high concentrations of organic acids generated during the maturation of epigenetic organic matter (predominantly type-III kerogen) in the Morrison Formation. The presence of authigenic phases that form near 100oC indicates that temperatures were high enough during diagenesis to cause the thermal degradation of kerogen.-from Author

  10. Ultrasonic recovery of copper and iron through the simultaneous utilization of Printed Circuit Boards (PCB) spent acid etching solution and PCB waste sludge.

    PubMed

    Huang, Zhiyuan; Xie, Fengchun; Ma, Yang

    2011-01-15

    A method was developed to recover the copper and iron from Printed Circuit Boards (PCB) manufacturing generated spent acid etching solution and waste sludge with ultrasonic energy at laboratory scale. It demonstrated that copper-containing PCB spent etching solution could be utilized as a leaching solution to leach copper from copper contained PCB waste sludge. It also indicated that lime could be used as an alkaline precipitating agent in this method to precipitate iron from the mixture of acidic PCB spent etching solution and waste sludge. This method provided an effective technique for the recovery of copper and iron through simultaneous use of PCB spent acid solution and waste sludge. The leaching rates of copper and iron enhanced with ultrasound energy were reached at 93.76% and 2.07% respectively and effectively separated copper from iron. Followed by applying lime to precipitate copper from the mixture of leachate and rinsing water produced by the copper and iron separation, about 99.99% and 1.29% of soluble copper and calcium were settled as the solids respectively. Furthermore the settled copper could be made as commercial rate copper. The process performance parameters studied were pH, ultrasonic power, and temperature. This method provided a simple and reliable technique to recover copper and iron from waste streams generated by PCB manufacturing, and would significantly reduce the cost of chemicals used in the recovery.

  11. Effect of adhesive hydrophilicity and curing-time on the permeability of resins bonded to water vs. ethanol-saturated acid-etched dentin

    PubMed Central

    Cadenaro, Milena; Breschi, Lorenzo; Rueggeberg, Frederick A.; Agee, Kelli; Di Lenarda, Roberto; Carrilho, Marcela; Tay, Franklin R.; Pashley, David H.

    2009-01-01

    Objective This study examined the ability of five comonomer blends (R1-R5) of methacrylate-based experimental dental adhesives solvated with 10 mass% ethanol, at reducing the permeability of acid-etched dentin. The resins were light-cured for 20, 40 or 60 s. The acid-etched dentin was saturated with water or 100% ethanol. Method Human unerupted third molars were converted into crown segments by removing the occlusal enamel and roots. The resulting crown segments were attached to plastic plates connected to a fluid-filled system for quantifying fluid flow across smear layer-covered dentin, acid-etched dentin and resin-bonded dentin. The degree of conversion of the resins was measured using Fourier transform infrared spectroscopy. Result Application of the most hydrophobic comonomer blend (R1) to water-saturated dentin produced the smallest reductions in dentin permeability (31.9, 44.1 and 61.1% after light-curing for 20, 40 or 60 s respectively). Application of the same blend to ethanol-saturated dentin reduced permeability of 74.1, 78.4 and 81.2%, respectively (p<0.05). Although more hydrophilic resins produced larger reductions in permeability, the same trend of significantly greater reductions in ethanol-saturated dentin over that of water-saturated dentin remained. This result can be explained by the higher solubility of resins in ethanol vs. water. Significance The largest reductions in permeability produced by resins were equivalent but not superior, to those produced by smear layers. Resin sealing of dentin remains a technique-sensitive step in bonding etch-and-rinse adhesives to dentin. PMID:18571228

  12. Surface Properties and Osteoblastic Cytocompatibility of Two Blasted and Acid-Etched Titanium Implant Systems with Distinct Microtopography

    PubMed Central

    Mesquita, Pedro; Gomes, Pedro de Sousa; Sampaio, Paula; Juodzbalys, Gintaras; Afonso, Américo

    2012-01-01

    ABSTRACT Objectives The aim of this study is to compare two commercially available screw-type sandblasted and acid-etched (SLA) Ti implant systems from Eckermann Laboratorium S.L., with similar geometry and distinct microtopography, regarding surface properties and osteoblastic cytocompatibility. Material and Methods Implant I (referred as a conventional SLA system) and Implant II (a system patented as Eckcyte®) were characterized for macro and microtopograpphy, surface roughness and chemical composition. For the cytocompatibility studies, human bone marrow osteoblastic cells were seeded over the implants' surface, and the cell response was assessed for cell adhesion and proliferation, alkaline phosphatase (ALP) activity and matrix mineralization. Results Implant I presented a rough surface with irregularly shaped and sized cavities among flatter-appearing areas, whereas Implant II exhibited a homogeneous rough microporous surface. Compared to Implant I, Implant II presented higher Ra values (0.8 [SD 0.008] μm and 1.21 [SD 0.15] μm, respectively, P < 0.05) and also increased values of Rz, Rt and Rsm, a more negative value of Rsk, and similar RKu values. XPS showed the expected presence of Ti, O, C and N; Al, Si, F, P and Ca were detected in low concentrations. Implant II exhibited significantly lower Al levels. Both implants supported the adhesion, proliferation and differentiation of osteoblastic cells. Implant II showed a thicker fibrilar cell layer and an earlier onset and more abundant matrix mineralization. Conclusions The homogeneous rough and microporous surface of Implant II is most probably a main contributor for its improved cell response. PMID:24422006

  13. Formation of silicon nanowire packed films from metallurgical-grade silicon powder using a two-step metal-assisted chemical etching method.

    PubMed

    Ouertani, Rachid; Hamdi, Abderrahmen; Amri, Chohdi; Khalifa, Marouan; Ezzaouia, Hatem

    2014-01-01

    In this work, we use a two-step metal-assisted chemical etching method to produce films of silicon nanowires shaped in micrograins from metallurgical-grade polycrystalline silicon powder. The first step is an electroless plating process where the powder was dipped for few minutes in an aqueous solution of silver nitrite and hydrofluoric acid to permit Ag plating of the Si micrograins. During the second step, corresponding to silicon dissolution, we add a small quantity of hydrogen peroxide to the plating solution and we leave the samples to be etched for three various duration (30, 60, and 90 min). We try elucidating the mechanisms leading to the formation of silver clusters and silicon nanowires obtained at the end of the silver plating step and the silver-assisted silicon dissolution step, respectively. Scanning electron microscopy (SEM) micrographs revealed that the processed Si micrograins were covered with densely packed films of self-organized silicon nanowires. Some of these nanowires stand vertically, and some others tilt to the silicon micrograin facets. The thickness of the nanowire films increases from 0.2 to 10 μm with increasing etching time. Based on SEM characterizations, laser scattering estimations, X-ray diffraction (XRD) patterns, and Raman spectroscopy, we present a correlative study dealing with the effect of the silver-assisted etching process on the morphological and structural properties of the processed silicon nanowire films.

  14. Formation of silicon nanowire packed films from metallurgical-grade silicon powder using a two-step metal-assisted chemical etching method

    PubMed Central

    2014-01-01

    In this work, we use a two-step metal-assisted chemical etching method to produce films of silicon nanowires shaped in micrograins from metallurgical-grade polycrystalline silicon powder. The first step is an electroless plating process where the powder was dipped for few minutes in an aqueous solution of silver nitrite and hydrofluoric acid to permit Ag plating of the Si micrograins. During the second step, corresponding to silicon dissolution, we add a small quantity of hydrogen peroxide to the plating solution and we leave the samples to be etched for three various duration (30, 60, and 90 min). We try elucidating the mechanisms leading to the formation of silver clusters and silicon nanowires obtained at the end of the silver plating step and the silver-assisted silicon dissolution step, respectively. Scanning electron microscopy (SEM) micrographs revealed that the processed Si micrograins were covered with densely packed films of self-organized silicon nanowires. Some of these nanowires stand vertically, and some others tilt to the silicon micrograin facets. The thickness of the nanowire films increases from 0.2 to 10 μm with increasing etching time. Based on SEM characterizations, laser scattering estimations, X-ray diffraction (XRD) patterns, and Raman spectroscopy, we present a correlative study dealing with the effect of the silver-assisted etching process on the morphological and structural properties of the processed silicon nanowire films. PMID:25349554

  15. Formation of silicon nanowire packed films from metallurgical-grade silicon powder using a two-step metal-assisted chemical etching method

    NASA Astrophysics Data System (ADS)

    Ouertani, Rachid; Hamdi, Abderrahmen; Amri, Chohdi; Khalifa, Marouan; Ezzaouia, Hatem

    2014-10-01

    In this work, we use a two-step metal-assisted chemical etching method to produce films of silicon nanowires shaped in micrograins from metallurgical-grade polycrystalline silicon powder. The first step is an electroless plating process where the powder was dipped for few minutes in an aqueous solution of silver nitrite and hydrofluoric acid to permit Ag plating of the Si micrograins. During the second step, corresponding to silicon dissolution, we add a small quantity of hydrogen peroxide to the plating solution and we leave the samples to be etched for three various duration (30, 60, and 90 min). We try elucidating the mechanisms leading to the formation of silver clusters and silicon nanowires obtained at the end of the silver plating step and the silver-assisted silicon dissolution step, respectively. Scanning electron microscopy (SEM) micrographs revealed that the processed Si micrograins were covered with densely packed films of self-organized silicon nanowires. Some of these nanowires stand vertically, and some others tilt to the silicon micrograin facets. The thickness of the nanowire films increases from 0.2 to 10 μm with increasing etching time. Based on SEM characterizations, laser scattering estimations, X-ray diffraction (XRD) patterns, and Raman spectroscopy, we present a correlative study dealing with the effect of the silver-assisted etching process on the morphological and structural properties of the processed silicon nanowire films.

  16. Study on the impact of silicon doping level on the trench profile using metal-assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Cao, Zhe; Huang, Qiyu; Zhao, Chuanrui; Zhang, Qing

    2016-10-01

    Metal-assisted chemical etching (MACE) has been used as a promising alternative method to fabricate micro/nano-structures on silicon substrates inexpensively. In this paper, profiles of deep trenches on silicon substrates, with different doping levels, fabricated by MACE were studied. A layer of interconnected gold islands was first deposited onto the silicon substrate as catalyst. Electrochemical etching was then performed in a hydrofluoric acid (HF) and hydrogen peroxide (H2O2) mixture solution with different HF-to-H2O2 ratio ρ (ρ = [HF]/([HF] + [H2O2])). Vertical deep trenches were fabricated successfully by using this method. It was observed that even under identical experimental condition, sidewalls with various tilting angles and different morphology could still form on silicon substrates with different resistivity. This possibly because with different resistivity silicon substrate, the gradient of holes in it greatly changed, and so did the final morphology. As a result, the tilting angle of etched trench sidewall can be tuned from 6° to 96° using silicon substrates with different resistivity and etchants with different ρ. By applying the angle-tuning technique revealed in this study, high aspect ratio patterns with vertical sidewalls could be fabricated and three-dimensional complex structures could be designed and realized in the future. [Figure not available: see fulltext.

  17. Effect of acid vapor etching on morphological and opto-electric properties of flat silicon and silicon nanowire arrays: A comparative study

    NASA Astrophysics Data System (ADS)

    Amri, Chohdi; Ouertani, Rachid; Hamdi, Abderrahmen; Ezzaouia, Hatem

    2016-03-01

    In this paper, we report a comparative study between porous silicon (pSi) and porous silicon nanowires (pSiNWs). Acid Vapor Etching (AVE) treatment has been used to perform porous structure on flat Si and SiNWs array substrates respectively. SiNW structure is prepared by the widely used Silver catalyzed etching method. SEM and TEM images show that AVE treatment induces porous structure in the whole Si wafer and the SiNW sidewall. Comparatively to pSi, pSiNWs exhibit a low reflectivity in the whole spectral range which decreases with etching duration. However, the reflectivity of pSi changes with porous layer thickness. Both pSi and pSiNWs exhibit a significant PL peak situated at 2 eV. PL peaks are attributed to the quantum confinement effect in the silicon nanocrystallites (SiNCs). We discussed the significant enhancement in the peak intensities and a shift toward lower energy displayed in Raman spectra for both pSi and pSiNWs. We reported a correlative study of the AVE treatment effect on the minority carrier life time of flat silicon and SiNW arrays with the passivation effect of chemical induced silicon oxides highlighted by FTIR spectra.

  18. Optical investigation of the intergrowth structure and accessibility of Brønsted acid sites in etched SSZ-13 zeolite crystals by confocal fluorescence microscopy.

    PubMed

    Sommer, Linn; Svelle, Stian; Lillerud, Karl Petter; Stöcker, Michael; Weckhuysen, Bert M; Olsbye, Unni

    2010-11-02

    Template decomposition followed by confocal fluorescence microscopy reveals a tetragonal-pyramidal intergrowth of subunits in micrometer-sized nearly cubic SSZ-13 zeolite crystals. In order to accentuate intergrowth boundaries and defect-rich areas within the individual large zeolite crystals, a treatment with an etching NaOH solution is applied. The defective areas are visualized by monitoring the spatial distribution of fluorescent tracer molecules within the individual SSZ-13 crystals by confocal fluorescence microscopy. These fluorescent tracer molecules are formed at the inner and outer crystal surfaces by utilizing the catalytic activity of the zeolite in the oligomerization reaction of styrene derivatives. This approach reveals various types of etching patterns that are an indication for the defectiveness of the studied crystals. We can show that specially one type of crystals, denoted as core-shell type, is highly accessible to the styrene molecules after etching. Despite the large crystal dimensions, the whole core-shell type SSZ-13 crystal is utilized for catalytic reaction. Furthermore, the confocal fluorescence microscopy measurements indicate a nonuniform distribution of the catalytically important Brønsted acid sites underlining the importance of space-resolved measurements.

  19. Effects of dextrose and lipopolysaccharide on the corrosion behavior of a Ti-6Al-4V alloy with a smooth surface or treated with double-acid-etching.

    PubMed

    Faverani, Leonardo P; Assunção, Wirley G; de Carvalho, Paulo Sérgio P; Yuan, Judy Chia-Chun; Sukotjo, Cortino; Mathew, Mathew T; Barao, Valentim A

    2014-01-01

    Diabetes and infections are associated with a high risk of implant failure. However, the effects of such conditions on the electrochemical stability of titanium materials remain unclear. This study evaluated the corrosion behavior of a Ti-6Al-4V alloy, with a smooth surface or conditioned by double-acid-etching, in simulated body fluid with different concentrations of dextrose and lipopolysaccharide. For the electrochemical assay, the open-circuit-potential, electrochemical impedance spectroscopy, and potentiodynamic test were used. The disc surfaces were characterized by scanning electron microscopy and atomic force microscopy. Their surface roughness and Vickers microhardness were also tested. The quantitative data were analyzed by Pearson's correlation and independent t-tests (α = 0.05). In the corrosion parameters, there was a strong lipopolysaccharide correlation with the Ipass (passivation current density), Cdl (double-layer capacitance), and Rp (polarization resistance) values (p<0.05) for the Ti-6Al-4V alloy with surface treatment by double-acid-etching. The combination of dextrose and lipopolysaccharide was correlated with the Icorr (corrosion current density) and Ipass (p<0.05). The acid-treated groups showed a significant increase in Cdl values and reduced Rp values (p<0.05, t-test). According to the topography, there was an increase in surface roughness (R2 = 0.726, p<0.0001 for the smooth surface; R2 = 0.405, p = 0.036 for the double-acid-etching-treated surface). The microhardness of the smooth Ti-6Al-4V alloy decreased (p<0.05) and that of the treated Ti-6Al-4V alloy increased (p<0.0001). Atomic force microscopy showed changes in the microstructure of the Ti-6Al-4V alloy by increasing the surface thickness mainly in the group associated with dextrose and lipopolysaccharide. The combination of dextrose and lipopolysaccharide affected the corrosion behavior of the Ti-6Al-4V alloy surface treated with double-acid-etching. However, no

  20. Effect of acid etching on marginal adaptation of mineral trioxide aggregate to apical dentin: microcomputed tomography and scanning electron microscopy analysis.

    PubMed

    Al-Fouzan, Khalid; Al-Garawi, Ziad; Al-Hezaimi, Khalid; Javed, Fawad; Al-Shalan, Thakib; Rotstein, Ilan

    2012-12-01

    The present investigation assessed the effect of acid etching on marginal adaptation of white- and gray-colored mineral trioxide aggregate (MTA) to apical dentin using microcomputed tomography (micro-CT) and scanning electron microscopy (SEM). Sixty-four extracted single-rooted human maxillary teeth were used. Following root-end resection and apical preparation, the teeth were equally divided into four groups according to the following root end filling materials: (i) white-colored MTA (WMTA), (ii) etched WMTA (EWMTA), (iii) gray-colored MTA (GMTA) and (iv) etched GMTA (EGMTA). After 48 h, the interface between root-end filling materials and the dentinal walls was assessed using micro-CT and SEM. Data were statistically analyzed using the Kruskal-Wallis and Dunn tests. Micro-CT analysis revealed gap volumes between the apical cavity dentin walls and EGMTA, GMTA, EWMTA and WMTA of (0.007 1±0.004) mm(3), (0.053±0.002) mm(3), (0.003 6±0.001) mm(3) and (0.005 9±0.002) mm(3) respectively. SEM analysis revealed gap sizes for EGMTA, WMTA, EWMTA and GMTA to be (492.3±13.8) µm, (594.5±17.12) µm, (543.1±15.33) µm and (910.7±26.2) µm respectively. A significant difference in gap size between root end preparations filled with GMTA and EGMTA was found (P<0.05). No significance difference in gap size between WMTA and EWMTA were found in either SEM or micro-CT analysis. In conclusion, pre-etching of apical dentin can provide a better seal for GMTA but not for WMTA.

  1. Large area fabrication of vertical silicon nanowire arrays by silver-assisted single-step chemical etching and their formation kinetics

    NASA Astrophysics Data System (ADS)

    Srivastava, Sanjay K.; Kumar, Dinesh; Schmitt, S. W.; Sood, K. N.; Christiansen, S. H.; Singh, P. K.

    2014-05-01

    Vertically aligned silicon nanowire (SiNW) arrays have been fabricated over a large area using a silver-assisted single-step electroless wet chemical etching (EWCE) method, which involves the etching of silicon wafers in aqueous hydrofluoric acid (HF) and silver nitrate (AgNO3) solution. A comprehensive systematic investigation on the influence of different parameters, such as the etching time (up to 15 h), solution temperature (10-80 °C), AgNO3 (5-200 mM) and HF (2-22 M) concentrations, and properties of the multi-crystalline silicon (mc-Si) wafers, is presented to establish a relationship of these parameters with the SiNW morphology. A linear dependence of the NW length on the etch time is obtained even at higher temperature (10-50 °C). The activation energy for the formation of SiNWs on Si(100) has been found to be equal to ˜0.51 eV . It has been shown for the first time that the surface area of the Si wafer exposed to the etching solution is an important parameter in determining the etching kinetics in the single-step process. Our results establish that single-step EWCE offers a wide range of parameters by means of which high quality vertical SiNWs can be produced in a very simple and controlled manner. A mechanism for explaining the influence of various parameters on the evolution of the NW structure is discussed. Furthermore, the SiNW arrays have extremely low reflectance (as low as <3% for Si(100) NWs and <12% for mc-Si NWs) compared to ˜35% for the polished surface in the 350-1000 nm wavelength range. The remarkably low reflection surface of SiNW arrays has great potential for use as an effective light absorber material in novel photovoltaic architectures, and other optoelectronic and photonic devices.

  2. Early bone response to sandblasted, dual acid-etched and H2O2/HCl treated titanium implants: an experimental study in the rabbit.

    PubMed

    He, F M; Yang, G L; Li, Y N; Wang, X X; Zhao, S F

    2009-06-01

    The aim of this study was to evaluate the influence of a roughened H(2)O(2)/HCl heat-treated titanium surface on peri-implant bone formation at an early stage in vivo. 24 Ti(6)Al(4)V alloy implants were used; half were treated by sandblasted and dual acid-etched treatments (control group), while the others were treated by sandblasted, dual acid-etched and H(2)O(2)/HCl heat treatments (test group). The morphology and roughness were analyzed by field emission SEM and atomic force microscopy. The implants were inserted into the femora of 12 adult white rabbits. After 2 and 4 weeks, femora block specimens were prepared for histological and histomorphometric analysis. SEM micrographs showed that multilevel and different sized pits were formed on both surfaces. New bone formation was observed on both implant surfaces. Test implants demonstrated a greater mean percentage of bone-implant contact as compared with controls at 2 (46.84 vs. 41.81, p=0.000) and 4 weeks (49.43 vs. 44.87, p=0.006) of healing. It is concluded that the H(2)O(2)/HCl heat-treated rough titanium surface promoted enhanced bone apposition during the early stages of new bone formation around the implant.

  3. Continuous-flow Mass Production of Silicon Nanowires via Substrate-Enhanced Metal-Catalyzed Electroless Etching of Silicon with Dissolved Oxygen as an Oxidant

    NASA Astrophysics Data System (ADS)

    Hu, Ya; Peng, Kui-Qing; Liu, Lin; Qiao, Zhen; Huang, Xing; Wu, Xiao-Ling; Meng, Xiang-Min; Lee, Shuit-Tong

    2014-01-01

    Silicon nanowires (SiNWs) are attracting growing interest due to their unique properties and promising applications in photovoltaic devices, thermoelectric devices, lithium-ion batteries, and biotechnology. Low-cost mass production of SiNWs is essential for SiNWs-based nanotechnology commercialization. However, economic, controlled large-scale production of SiNWs remains challenging and rarely attainable. Here, we demonstrate a facile strategy capable of low-cost, continuous-flow mass production of SiNWs on an industrial scale. The strategy relies on substrate-enhanced metal-catalyzed electroless etching (MCEE) of silicon using dissolved oxygen in aqueous hydrofluoric acid (HF) solution as an oxidant. The distinct advantages of this novel MCEE approach, such as simplicity, scalability and flexibility, make it an attractive alternative to conventional MCEE methods.

  4. Continuous-flow mass production of silicon nanowires via substrate-enhanced metal-catalyzed electroless etching of silicon with dissolved oxygen as an oxidant.

    PubMed

    Hu, Ya; Peng, Kui-Qing; Liu, Lin; Qiao, Zhen; Huang, Xing; Wu, Xiao-Ling; Meng, Xiang-Min; Lee, Shuit-Tong

    2014-01-13

    Silicon nanowires (SiNWs) are attracting growing interest due to their unique properties and promising applications in photovoltaic devices, thermoelectric devices, lithium-ion batteries, and biotechnology. Low-cost mass production of SiNWs is essential for SiNWs-based nanotechnology commercialization. However, economic, controlled large-scale production of SiNWs remains challenging and rarely attainable. Here, we demonstrate a facile strategy capable of low-cost, continuous-flow mass production of SiNWs on an industrial scale. The strategy relies on substrate-enhanced metal-catalyzed electroless etching (MCEE) of silicon using dissolved oxygen in aqueous hydrofluoric acid (HF) solution as an oxidant. The distinct advantages of this novel MCEE approach, such as simplicity, scalability and flexibility, make it an attractive alternative to conventional MCEE methods.

  5. Morphology of resin-dentin interfaces after Er,Cr:YSGG laser and acid etching preparation and application of different bonding systems.

    PubMed

    Beer, Franziska; Buchmair, Alfred; Körpert, Wolfram; Marvastian, Leila; Wernisch, Johann; Moritz, Andreas

    2012-07-01

    The goal of this study was to show the modifications in the ultrastructure of the dentin surface morphology following different surface treatments. The stability of the adhesive compound with dentin after laser preparation compared with conventional preparation using different bonding agents was evaluated. An Er,Cr:YSGG laser and 36% phosphoric acid in combination with various bonding systems were used. A total of 100 caries-free human third molars were used in this study. Immediately after surgical removal teeth were cut using a band saw and 1-mm thick dentin slices were created starting at a distance of 4 mm from the cusp plane to ensure complete removal of the enamel. The discs were polished with silicon carbide paper into rectangular shapes to a size of 6 × 4 mm (±0,2 mm).The discs as well as the remaining teeth stumps were stored in 0.9% NaCl at room temperature. The specimens were divided into three main groups (group I laser group, group II etch group, group III laser and etch group) and each group was subdivided into three subgroups which were allocated to the different bonding systems (subgroup A Excite, subgroup B Scotchbond, subgroup C Syntac). Each disc and the corresponding tooth stump were treated in the same way. After preparation the bonding composite material was applied according to the manufacturers' guidelines in a hollow tube of 2 mm diameter to the disc as well as to the corresponding tooth stump. Shear bond strength testing and environmental scanning electron microscopy were used to assess the morphology and stability of the resin-dentin interface. The self-etching bonding system showed the highest and the most constant shear values in all three main groups, thus enabling etching with phosphoric acid after laser preparation to be avoided. Thus we conclude that laser preparation creates a surface texture that allows prediction of the quality of the restoration without the risk of negative influences during the following treatment steps. This

  6. Dry etching of metallization

    NASA Technical Reports Server (NTRS)

    Bollinger, D.

    1983-01-01

    The production dry etch processes are reviewed from the perspective of microelectronic fabrication applications. The major dry etch processes used in the fabrication of microelectronic devices can be divided into two categories - plasma processes in which samples are directly exposed to an electrical discharge, and ion beam processes in which samples are etched by a beam of ions extracted from a discharge. The plasma etch processes can be distinguished by the degree to which ion bombardment contributes to the etch process. This, in turn is related to capability for anisotropic etching. Reactive Ion Etching (RIE) and Ion Beam Etching are of most interest for etching of thin film metals. RIE is generally considered the best process for large volume, anisotropic aluminum etching.

  7. Influence of acid-base conditioning on the bond strength of five luting agents employing self-etching primer to enamel and dentin.

    PubMed

    Yokomichi, Rie; Taira, Yohsuke; Soeno, Kohyoh; Atsuta, Mitsuru

    2005-06-01

    The purpose of this study was to evaluate the effect of multi-step conditioning (PA-AD conditioning) with phosphoric acid and sodium hypochlorite on the bond strength of five luting materials to enamel and dentin. Three commercial self-etching/priming systems (Panavia, Linkmax, and Multibond) and two experimental systems (ED/Super-Bond and EDFe/Super-Bond) were used. The surfaces of bovine enamel or dentin were bonded to a stainless steel rod. Tensile bond strength was determined after 24-hour immersion in water. PA-AD conditioning significantly improved the bond strength between enamel and three of the systems (Panavia, ED/Super-Bond, and EDFe/Super-Bond), but did not have any effect on Linkmax and Multibond. Likewise, PA-AD conditioning did not significantly improve the bond strength of Panavia, Linkmax, Multibond, and ED/Super-Bond to dentin. Highest bond strength to dentin (19.7 MPa) was obtained when self-etching primer containing ferric chloride (EDFe/Super-Bond) was used, but additional PA-AD conditioning significantly weakened the bonding (12.6 MPa).

  8. Towards refractive index sensitivity of long-period gratings at level of tens of µm per refractive index unit: fiber cladding etching and nano-coating deposition.

    PubMed

    Śmietana, Mateusz; Koba, Marcin; Mikulic, Predrag; Bock, Wojtek J

    2016-05-30

    In this work we report experimental results on optimizing the refractive index (RI) sensitivity of long-period gratings (LPGs) by fiber cladding etching and thin aluminum oxide (Al2O3) overlay deposition. The presented LPG takes advantage of work in the dispersion turning point (DTP) regime as well as the mode transition (MT) effect for higher-order cladding modes (LP09 and LP010). The MT was obtained by depositing Al2O3 overlays with single-nanometer precision using the Atomic Layer Deposition method (ALD). Etching of both the overlay and the fiber cladding was performed using hydrofluoric acid (HF). For shallow etching of the cladding, i.e., DTP observed at next = 1.429 and 1.439 RIU for an LPG with no overlay, followed by deposition of an overlay of up to 167 nm in thickness, HF etching allowed for post-deposition fine-tuning of the overlay thickness resulting in a significant increase in RI sensitivity mainly at the DTP of the LP09 cladding mode. However, at an external RI (next) above 1.39 RIU, the DTP of LP010 was noticed, and its RI sensitivity exceeded 9,000 nm/RIU. Deeper etching of the cladding, i.e., DTP observed for next above 1.45 RIU, followed by the deposition of thicker overlays (up to 201 nm in thickness) allowed the sensitivity to reach values of over 40,000 nm/RIU in a narrow RI range. Sensitivity exceeding 20,000 nm/RIU was obtained in an RI range suitable for label-free biosensing applications.

  9. Process for etching mixed metal oxides

    DOEpatents

    Ashby, C.I.H.; Ginley, D.S.

    1994-10-18

    An etching process is described using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstrom range may be achieved by this method. 1 fig.

  10. Process for etching mixed metal oxides

    DOEpatents

    Ashby, Carol I. H.; Ginley, David S.

    1994-01-01

    An etching process using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstom range may be achieved by this method.

  11. Fabrication of Meso-Porous Sintered Metal Thin Films by Selective Etching of Silica Based Sacrificial Template

    PubMed Central

    Dumée, Ludovic F.; She, Fenghua; Duke, Mikel; Gray, Stephen; Hodgson, Peter; Kong, Lingxue

    2014-01-01

    Meso-porous metal materials have enhanced surface energies offering unique surface properties with potential applications in chemical catalysis, molecular sensing and selective separation. In this paper, commercial 20 nm diameter metal nano-particles, including silver and copper were blended with 7 nm silica nano-particles by shear mixing. The resulted powders were cold-sintered to form dense, hybrid thin films. The sacrificial silica template was then removed by selective etching in 12 wt% hydrofluoric acid solutions for 15 min to reveal a purely metallic meso-porous thin film material. The impact of the initial silica nano-particle diameter (7–20 nm) as well as the sintering pressure (5–20 ton·m−2) and etching conditions on the morphology and properties of the final nano-porous thin films were investigated by porometry, pyknometery, gas and liquid permeation and electron microscopy. Furthermore, the morphology of the pores and particle aggregation during shear mixing were assessed through cross-sectioning by focus ion beam milling. It is demonstrated that meso-pores ranging between 50 and 320 nm in average diameter and porosities up to 47% can be successfully formed for the range of materials tested.

  12. Direct fabrication of compound-eye microlens array on curved surfaces by a facile femtosecond laser enhanced wet etching process

    NASA Astrophysics Data System (ADS)

    Bian, Hao; Wei, Yang; Yang, Qing; Chen, Feng; Zhang, Fan; Du, Guangqing; Yong, Jiale; Hou, Xun

    2016-11-01

    We report a direct fabrication of an omnidirectional negative microlens array on a curved substrate by a femtosecond laser enhanced chemical etching process, which is utilized as a molding template for duplicating bioinspired compound eyes. The femtosecond laser treatment of the curved glass substrate employs a common x-y-z stage without rotating the sample surface perpendicular to the laser beam, and uniform, omnidirectional-aligned negative microlenses are generated after a hydrofluoric acid etching. Using the negative microlens array on the concave glass substrate as a molding template, we fabricate an artificial compound eye with 3000 positive microlenses of 95-μm diameter close-packed on a 5-mm polymer hemisphere. Compared to the transferring process, the negative microlenses directly fabricated on the curved mold by our method are distortion-free, and the duplicated artificial eye presents clear and uniform imaging capabilities. This work provides a facile and efficient route to the fabrication of microlenses on any curved substrates without complicated alignment and motion control processes, which has the potential for the development of new microlens-based devices and systems.

  13. A review of the developments of self-etching primers and adhesives -Effects of acidic adhesive monomers and polymerization initiators on bonding to ground, smear layer-covered teeth.

    PubMed

    Ikemura, Kunio; Kadoma, Yoshinori; Endo, Takeshi

    2011-01-01

    This paper reviews the developments of self-etching primers and adhesives, with a special focus on the effect of acidic adhesive monomers and polymerization initiators on bonding to ground, smear layer-covered teeth. Ionized acidic adhesive monomers chemically interact with tooth substrates and facilitate good bonding to ground dentin. Polymerization initiators in self-etching primers further promote effective bonding to ground dentin. To promote bonding to both dentin and enamel, phosphonic acid monomers such as 6-methacryloyloxyhexyl phosphonoacetate (6-MHPA) were developed. These novel adhesive monomers also have a water-soluble nature and are hence endowed with sufficient demineralization capability. A new single-bottle, self-etching, 2-hydroxyethyl methacrylate (HEMA)-free adhesive comprising 6-MHPA and 4-acryloyloxyethoxycarbonylphthalic acid (4-AET) was developed. This novel adhesive enabled strong adhesion to both ground enamel and dentin, but its formulation stability was influenced by pH value of the adhesive. To develop hydrolytically stable, single-bottle, self-etching adhesives, hydrolytically stable, radical-polymerizable acidic monomers with amide or ether linkages have been developed.

  14. Human dental implants with a sandblasted, acid-etched surface retrieved after 5 and 10 years: a light and scanning electron microscopy evaluation of two cases.

    PubMed

    Mangano, Carlo; Perrotti, Vittoria; Raspanti, Mario; Mangano, Francesco; Luongo, Giuseppe; Piattelli, Adriano; Iezzi, Giovanna

    2013-01-01

    The aim of the present study was a light and scanning electron microscopy (SEM) evaluation of the peri-implant tissues around sandblasted, acid-etched implants, retrieved from man, after a loading period of 5 and 10 years, respectively. Two implants (Leone Implant System) had been retrieved for a fracture of the prosthetic superstructure respectively after 5 and 10 years of loading. Both implants were stable before retrieval and had been retrieved using a 5-mm trephine bur. One implant was treated to obtain thin ground sections, while the other underwent evaluation under SEM. Compact, mature lamellar bone was present over most of the implant perimeter in close contact with the implant surface and with many remodeling areas. Under SEM, small concavities, completely filled by mineralized bone, were present on the implant surface. The present histologic results showed that these implants were well integrated over the long term, and the peri-implant bone was undergoing continuous remodeling at the interface.

  15. A solvent extraction approach to recover acetic acid from mixed waste acids produced during semiconductor wafer process.

    PubMed

    Shin, Chang-Hoon; Kim, Ju-Yup; Kim, Jun-Young; Kim, Hyun-Sang; Lee, Hyang-Sook; Mohapatra, Debasish; Ahn, Jae-Woo; Ahn, Jong-Gwan; Bae, Wookeun

    2009-03-15

    Recovery of acetic acid (HAc) from the waste etching solution discharged from silicon wafer manufacturing process has been attempted by using solvent extraction process. For this purpose 2-ethylhexyl alcohol (EHA) was used as organic solvent. In the pre-treatment stage >99% silicon and hydrofluoric acid was removed from the solution by precipitation. The synthesized product, Na(2)SiF(6) having 98.2% purity was considered of commercial grade having good market value. The waste solution containing 279 g/L acetic acid, 513 g/L nitric acid, 0.9 g/L hydrofluoric acid and 0.030 g/L silicon was used for solvent extraction study. From the batch test results equilibrium conditions for HAc recovery were optimized and found to be 4 stages of extraction at an organic:aqueous (O:A) ratio of 3, 4 stages of scrubbing and 4 stages of stripping at an O:A ratio of 1. Deionized water (DW) was used as stripping agent to elute HAc from organic phase. In the whole batch process 96.3% acetic acid recovery was achieved. Continuous operations were successfully conducted for 100 h using a mixer-settler to examine the feasibility of the extraction system for its possible commercial application. Finally, a complete process flowsheet with material balance for the separation and recovery of HAc has been proposed.

  16. Histological and immunohistochemical evaluation of the peri-implant soft tissues around machined and acid-etched titanium healing abutments: a prospective randomised study.

    PubMed

    Degidi, Marco; Artese, Luciano; Piattelli, Adriano; Scarano, Antonio; Shibli, Jamil A; Piccirilli, Marcello; Perrotti, Vittoria; Iezzi, Giovanna

    2012-06-01

    A close spatial correlation has been described between the roughness of intraoral materials and the rate of bacterial colonisation. The aim of the present study in man was to conduct a comparative immunohistochemical evaluation of the inflammatory infiltrate, microvessel density, the nitric oxide synthases 1 and 3 and the vascular endothelial growth factor expression, the proliferative activity, and the B and T lymphocyte and histiocyte positivity in the peri-implant soft tissues around machined and acid-etched titanium healing caps. Ten patients participated in this study. The patients were enrolled consecutively. All patients received dental implants left to heal in a non-submerged mode. Healing caps were inserted in all implants. Half of the implants were supplied randomly with machined caps of titanium (control), while the other half were provided randomly with acid-etched titanium caps (test). After a 6-month healing period, a gingival biopsy was performed with a circular scalpel around the healing caps of both groups. The inflammatory infiltrate was mostly present in test specimens. Their extension was much larger than that of the control samples. A higher number of T and B lymphocytes were observed in test specimens. Higher values of microvessel density and a higher expression of vascular endothelial growth factor intensity were observed in the test samples. Furthermore, the Ki-67, NOS1 and NOS3 expression was significantly higher in the test specimens. All these results showed that the tissues around test healing caps underwent a higher rate of restorative processes, most probably correlated to the higher inflammation processes observed in these tissues.

  17. Ultra-Trace Detection of Fluoride Ion and Hydrofluoric Acid

    SciTech Connect

    Timothy M. Swager

    2005-03-17

    Describes general synthetic strategies developed under this grant to control interchain electronic communications within conjugated polymers (CPs). Novel chemical architectures built on iptycenes, metallorotaxanes, and canopied pyrroles restrict the dimensionality of electronic structures responsible for excition and charge transport. Structure-property relationships emerging from studies of selected systems are discussed, focusing on their implications for the sensitivity of these materials as sensors.

  18. New Etch Monitoring Technique

    NASA Astrophysics Data System (ADS)

    Kaiser, Christina; Adamcyk, Martin; Levy, Yuval; Tiedje, Tom; Young, Jeff F.; Kelson, Itzhak

    2000-05-01

    Plasma etching is an important tool for the development of various types of nanostructures. The development of specific plasma etching procedures is often time-consuming. We will describe an new technique for IN-SITU monitoring of the etch rate and sidewall profile of 1D GRATINGS in a remote plasma etcher. The technique involves monitoring the energy loss of alpha particles that propagate through the layer being etched. Samples to be etched are impregnated by a thin near-surface layer of 224Ra nuclei that decay by alpha particle emission. The energy spectrum of the alpha particles is acquired at intervals in the etch process. The etch rate on flat surfaces can be determined quite simply by measuring the change in the peak energy of the transmitted particles. By using a simple geometric model that employs the Bethe Bloch formula for energy loss of charges particles the etch profile of masked samples can also be inferred.

  19. Tobacco etch virus infectivity in Capsicum spp. is determined by a maximum of three amino acids in the viral virulence determinant VPg.

    PubMed

    Perez, Kari; Yeam, Inhwa; Kang, Byoung-Cheorl; Ripoll, Daniel R; Kim, Jinhee; Murphy, John F; Jahn, Molly M

    2012-12-01

    Potyvirus resistance in Capsicum spp. has been attributed to amino acid substitutions at the pvr1 locus that cause conformational shifts in eukaryotic translation initiation factor eIF4E. The viral genome-linked protein (VPg) sequence was isolated and compared from three Tobacco etch virus (TEV) strains, highly aphid-transmissible (HAT), Mex21, and N, which differentially infect Capsicum genotypes encoding Pvr1(+), pvr1, and pvr1(2). Viral chimeras were synthesized using the TEV-HAT genome, replacing HAT VPg with Mex21 or N VPg. TEV HAT did not infect pepper plants homozygous for either the pvr1 or pvr1(2) allele. However, the novel chimeric TEV strains, TEVHAT(Mex21-VPg) and TEV-HAT(N-VPg), infected pvr1 and pvr1(2) pepper plants, respectively, demonstrating that VPg is the virulence determinant in this pathosystem. Three dimensional structural models predicted interaction between VPg and the susceptible eIF4E genotype in every case, while resistant genotypes were never predicted to interact. To determine whether there is a correlation between physical interaction of VPg with eIF4E and infectivity, the effects of amino acid variation within VPg were assessed. Interaction between pvr1(2) eIF4E and N VPg was detected in planta, implying that the six amino acid differences in N VPg relative to HAT VPg are responsible for restoring the physical interaction and infectivity.

  20. Rapid formation of AgnX(X = S, Cl, PO4, C2O4) nanotubes via an acid-etching anion exchange reaction

    NASA Astrophysics Data System (ADS)

    Li, Jingjing; Yang, Wenlong; Ning, Jiqiang; Zhong, Yijun; Hu, Yong

    2014-05-01

    This work presents a rapid nanotube fabrication method for a series of silver compounds AgnX, such as Ag2S, AgCl, Ag3PO4, and Ag2C2O4, from pregrown Ag2CO3 nanorod templates. The anion exchange process involved takes place in non-aqueous solutions just at room temperature and completes within 10 minutes. An acid-etching anion exchange reaction mechanism has been proved underneath the transformation process from Ag2CO3 nanorods to AgnX nanotubes by the observation of an intermediate yolk-shell nanostructure. It has been found that the final structure of the products can be conveniently controlled by simply varying the concentration of HnX acids, and the organic solvents employed play a vital role in the formation of the nanotubes by effectively controlling the diffusion rates of different species of reacting ions. As a demonstration, the as-prepared AgCl and Ag3PO4 nanotubes exhibit enhanced photocatalytic activity and favorable recyclability for the photodegradation of rhodamine B (RhB) under visible-light irradiation.This work presents a rapid nanotube fabrication method for a series of silver compounds AgnX, such as Ag2S, AgCl, Ag3PO4, and Ag2C2O4, from pregrown Ag2CO3 nanorod templates. The anion exchange process involved takes place in non-aqueous solutions just at room temperature and completes within 10 minutes. An acid-etching anion exchange reaction mechanism has been proved underneath the transformation process from Ag2CO3 nanorods to AgnX nanotubes by the observation of an intermediate yolk-shell nanostructure. It has been found that the final structure of the products can be conveniently controlled by simply varying the concentration of HnX acids, and the organic solvents employed play a vital role in the formation of the nanotubes by effectively controlling the diffusion rates of different species of reacting ions. As a demonstration, the as-prepared AgCl and Ag3PO4 nanotubes exhibit enhanced photocatalytic activity and favorable recyclability for the

  1. Alkaline etch system qualification

    SciTech Connect

    Goldammer, S.E.; Pemberton, S.E.; Tucker, D.R.

    1997-04-01

    Based on the data from this qualification activity, the Atotech etch system, even with minimum characterization, was capable of etching production printed circuit products as good as those from the Chemcut system. Further characterization of the Atotech system will improve its etching capability. In addition to the improved etch quality expected from further characterization, the Atotech etch system has additional features that help reduce waste and provide for better consistency in the etching process. The programmable logic controller and computer will allow operators to operate the system manually or from pre-established recipes. The evidence and capabilities of the Atotech system made it as good as or better than the Chemcut system for etching WR products. The Printed Wiring Board Engineering Department recommended that the Atotech system be released for production. In December 1995, the Atotech system was formerly qualified for production.

  2. Photolithography-free laser-patterned HF acid-resistant chromium-polyimide mask for rapid fabrication of microfluidic systems in glass

    NASA Astrophysics Data System (ADS)

    Zamuruyev, Konstantin O.; Zrodnikov, Yuriy; Davis, Cristina E.

    2017-01-01

    Excellent chemical and physical properties of glass, over a range of operating conditions, make it a preferred material for chemical detection systems in analytical chemistry, biology, and the environmental sciences. However, it is often compromised with SU8, PDMS, or Parylene materials due to the sophisticated mask preparation requirements for wet etching of glass. Here, we report our efforts toward developing a photolithography-free laser-patterned hydrofluoric acid-resistant chromium-polyimide tape mask for rapid prototyping of microfluidic systems in glass. The patterns are defined in masking layer with a diode-pumped solid-state laser. Minimum feature size is limited to the diameter of the laser beam, 30 µm minimum spacing between features is limited by the thermal shrinkage and adhesive contact of the polyimide tape to 40 µm. The patterned glass substrates are etched in 49% hydrofluoric acid at ambient temperature with soft agitation (in time increments, up to 60 min duration). In spite of the simplicity, our method demonstrates comparable results to the other current more sophisticated masking methods in terms of the etched depth (up to 300 µm in borosilicate glass), feature under etch ratio in isotropic etch (~1.36), and low mask hole density. The method demonstrates high yield and reliability. To our knowledge, this method is the first proposed technique for rapid prototyping of microfluidic systems in glass with such high performance parameters. The proposed method of fabrication can potentially be implemented in research institutions without access to a standard clean-room facility.

  3. Effect of cavity preparation method on microtensile bond strength of a self-etching primer vs phosphoric acid etchant to enamel.

    PubMed

    de Souza-Zaroni, Wanessa Christine; Delfino, Carina Sinclér; Ciccone-Nogueira, Juliane Cristina; Palma-Dibb, Regina Guenka; Corona, Silmara Aparecida Milori

    2007-10-01

    This study evaluated the effect of cavity preparation using air abrasion or carbide bur on bond strength to enamel treated with a self-etching primer (Tyrian SPE) or a phosphoric acid etchant. Twenty-four molars were divided into three groups: high-speed; standard handpiece (ST air abrasion) or supersonic handpiece (SP air abrasion) of the same air-abrasive system. The enamel surfaces were treated with one of the two etchants and the same adhesive agent One Step Plus, and then composite buildups were done with Filtek Z250. After 24 h at 37 degrees C, beams (0.8 mm2) were obtained and subjected to tensile stress in a universal testing machine (0.5 mm/min). The data were submitted to analysis of variance and Tukey's test (P < 0.05). For the conditioning agents, it was observed that the specimens conditioned with phosphoric acid presented superior results than the specimens that used Tyrian SPE. For the preparation techniques, it was verified that the SP air abrasion groups showed the highest bond strengths and carbide-bur groups presented the lowest bond strengths when the specimens were conditioned with Tyrian SPE. It can be concluded that the influence of the cavity preparation method was dependent on the conditioning system used, only when using carbide-bur preparation technique.

  4. Rapid formation of Ag(n)X(X = S, Cl, PO4, C2O4) nanotubes via an acid-etching anion exchange reaction.

    PubMed

    Li, Jingjing; Yang, Wenlong; Ning, Jiqiang; Zhong, Yijun; Hu, Yong

    2014-06-07

    This work presents a rapid nanotube fabrication method for a series of silver compounds AgnX, such as Ag2S, AgCl, Ag3PO4, and Ag2C2O4, from pregrown Ag2CO3 nanorod templates. The anion exchange process involved takes place in non-aqueous solutions just at room temperature and completes within 10 minutes. An acid-etching anion exchange reaction mechanism has been proved underneath the transformation process from Ag2CO3 nanorods to AgnX nanotubes by the observation of an intermediate yolk-shell nanostructure. It has been found that the final structure of the products can be conveniently controlled by simply varying the concentration of HnX acids, and the organic solvents employed play a vital role in the formation of the nanotubes by effectively controlling the diffusion rates of different species of reacting ions. As a demonstration, the as-prepared AgCl and Ag3PO4 nanotubes exhibit enhanced photocatalytic activity and favorable recyclability for the photodegradation of rhodamine B (RhB) under visible-light irradiation.

  5. Quantification of proteins using enhanced etching of Ag coated Au nanorods by the Cu2+/bicinchoninic acid pair with improved sensitivity

    NASA Astrophysics Data System (ADS)

    Liu, Wenqi; Hou, Shuai; Yan, Jiao; Zhang, Hui; Ji, Yinglu; Wu, Xiaochun

    2015-12-01

    Plasmonic nanosensors show great potential in ultrasensitive detection, especially with the plasmon peak position as the detection modality. Herein, a new sensitive but simple total protein quantification method termed the SPR-BCA assay is demonstrated by combining plasmonic nanosensors with protein oxidation by Cu2+. The easy tuning of localized surface plasmon resonance (LSPR) features of plasmonic nanostructures makes them ideal sensing platforms. We found that the Cu2+/bicinchoninic acid (BCA) pair exhibits accelerated etching of Au@Ag nanorods and results in the LSPR peak shift. A linear relationship between Cu2+ and the LSPR shift is found in a double logarithmic coordinate. Such double logarithm relationship is transferred to the concentration of proteins. Theoretical simulation shows that Au nanorods with large aspect ratios and small core sizes show high detection sensitivity. Via optimized sensor design, we achieved an increased sensitivity (the limit of detection was 3.4 ng ml-1) and a wide working range (0.5 to 1000 μg ml-1) compared with the traditional BCA assay. The universal applicability of our method to various proteins further proves its potential in practical applications.Plasmonic nanosensors show great potential in ultrasensitive detection, especially with the plasmon peak position as the detection modality. Herein, a new sensitive but simple total protein quantification method termed the SPR-BCA assay is demonstrated by combining plasmonic nanosensors with protein oxidation by Cu2+. The easy tuning of localized surface plasmon resonance (LSPR) features of plasmonic nanostructures makes them ideal sensing platforms. We found that the Cu2+/bicinchoninic acid (BCA) pair exhibits accelerated etching of Au@Ag nanorods and results in the LSPR peak shift. A linear relationship between Cu2+ and the LSPR shift is found in a double logarithmic coordinate. Such double logarithm relationship is transferred to the concentration of proteins. Theoretical

  6. From Hypo- to Hypersuppression: Effect of Amino Acid Substitutions on the RNA-Silencing Suppressor Activity of the Tobacco etch potyvirus HC-Pro

    PubMed Central

    Torres-Barceló, Clara; Martín, Susana; Daròs, José-Antonio; Elena, Santiago F.

    2008-01-01

    RNA silencing participates in several important functions: from the regulation of cell metabolism and organism development to sequence-specific antiviral defense. Most plant viruses have evolved proteins that suppress RNA silencing and that in many cases are multifunctional. Tobacco etch potyvirus (TEV) HC-Pro protein suppresses RNA silencing and participates in aphid-mediated transmission, polyprotein processing, and genome amplification. In this study, we have generated 28 HC-Pro amino acid substitution mutants and quantified their capacity as suppressors of RNA silencing in a transient expression assay. Most mutations either had no quantitative effect or completely abolished silencing suppression (10 in each class), 3 caused a significant decrease in the activity, and 5 significantly increased it, revealing an unexpected high frequency of mutations conferring hypersuppressor activity. A representative set of the mutant alleles, containing both hypo- and hypersuppressors, was further analyzed for their effect on TEV accumulation and the strength of induced symptoms. Whereas TEV variants with hyposuppressor mutants were far less virulent than wild-type TEV, those with hypersuppressor alleles induced symptoms that were not more severe than those characteristic of the wild-type virus, suggesting that there is not a perfect match between suppression and virulence. PMID:18780745

  7. Effects of rhBMP-2 on Sandblasted and Acid Etched Titanium Implant Surfaces on Bone Regeneration and Osseointegration: Spilt-Mouth Designed Pilot Study

    PubMed Central

    Kim, Nam-Ho; Lee, So-Hyoun; Ryu, Jae-Jun; Choi, Kyung-Hee; Huh, Jung-Bo

    2015-01-01

    This study was conducted to evaluate effects of rhBMP-2 applied at different concentrations to sandblasted and acid etched (SLA) implants on osseointegration and bone regeneration in a bone defect of beagle dogs as pilot study using split-mouth design. Methods. For experimental groups, SLA implants were coated with different concentrations of rhBMP-2 (0.1, 0.5, and 1 mg/mL). After assessment of surface characteristics and rhBMP-2 releasing profile, the experimental groups and untreated control groups (n = 6 in each group, two animals in each group) were placed in split-mouth designed animal models with buccal open defect. At 8 weeks after implant placement, implant stability quotients (ISQ) values were recorded and vertical bone height (VBH, mm), bone-to-implant contact ratio (BIC, %), and bone volume (BV, %) in the upper 3 mm defect areas were measured. Results. The ISQ values were highest in the 1.0 group. Mean values of VBH (mm), BIC (%), and BV (%) were greater in the 0.5 mg/mL and 1.0 mg/mL groups than those in 0.1 and control groups in buccal defect areas. Conclusion. In the open defect area surrounding the SLA implant, coating with 0.5 and 1.0 mg/mL concentrations of rhBMP-2 was more effective, compared with untreated group, in promoting bone regeneration and osseointegration. PMID:26504807

  8. Radiation induced deposition of copper nanoparticles inside the nanochannels of poly(acrylic acid)-grafted poly(ethylene terephthalate) track-etched membranes

    NASA Astrophysics Data System (ADS)

    Korolkov, Ilya V.; Güven, Olgun; Mashentseva, Anastassiya A.; Atıcı, Ayse Bakar; Gorin, Yevgeniy G.; Zdorovets, Maxim V.; Taltenov, Abzal A.

    2017-01-01

    Poly(ethylene terephthalate) PET, track-etched membranes (TeMs) with 400 nm average pore size were UV-grafted with poly(acrylic acid) (PAA) after oxidation of inner surfaces by H2O2/UV system. Carboxylate groups of grafted PAA chains were easily complexed with Cu2+ ions in aqueous solutions. These ions were converted into metallic copper nanoparticles (NPs) by radiation-induced reduction of copper ions in aqueous-alcohol solution by gamma rays in the dose range of 46-250 kGy. Copper ions chelating with -COOH groups of PAA chains grafted on PET TeMs form polymer-metal ion complex that prevent the formation of agglomerates during reduction of copper ions to metallic nanoparticles. The detailed analysis by X-Ray diffraction technique (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX) confirmed the deposition of copper nanoparticles with the average size of 70 nm on the inner surface of nanochannels of PET TeMs. Samples were also investigated by FTIR, ESR spectroscopies to follow copper ion reduction.

  9. Quantification of proteins using enhanced etching of Ag coated Au nanorods by the Cu(2+)/bicinchoninic acid pair with improved sensitivity.

    PubMed

    Liu, Wenqi; Hou, Shuai; Yan, Jiao; Zhang, Hui; Ji, Yinglu; Wu, Xiaochun

    2016-01-14

    Plasmonic nanosensors show great potential in ultrasensitive detection, especially with the plasmon peak position as the detection modality. Herein, a new sensitive but simple total protein quantification method termed the SPR-BCA assay is demonstrated by combining plasmonic nanosensors with protein oxidation by Cu(2+). The easy tuning of localized surface plasmon resonance (LSPR) features of plasmonic nanostructures makes them ideal sensing platforms. We found that the Cu(2+)/bicinchoninic acid (BCA) pair exhibits accelerated etching of Au@Ag nanorods and results in the LSPR peak shift. A linear relationship between Cu(2+) and the LSPR shift is found in a double logarithmic coordinate. Such double logarithm relationship is transferred to the concentration of proteins. Theoretical simulation shows that Au nanorods with large aspect ratios and small core sizes show high detection sensitivity. Via optimized sensor design, we achieved an increased sensitivity (the limit of detection was 3.4 ng ml(-1)) and a wide working range (0.5 to 1000 μg ml(-1)) compared with the traditional BCA assay. The universal applicability of our method to various proteins further proves its potential in practical applications.

  10. Comparison of alkaline phosphatase activity of MC3T3-E1 cells cultured on different Ti surfaces: modified sandblasted with large grit and acid-etched (MSLA), laser-treated, and laser and acid-treated Ti surfaces

    PubMed Central

    Li, Lin-Jie; Kim, So-Nam

    2016-01-01

    PURPOSE In this study, the aim of this study was to evaluate the effect of implant surface treatment on cell differentiation of osteoblast cells. For this purpose, three surfaces were compared: (1) a modified SLA (MSLA: sand-blasted with large grit, acid-etched, and immersed in 0.9% NaCl), (2) a laser treatment (LT: laser treatment) titanium surface and (3) a laser and acid-treated (LAT: laser treatment, acid-etched) titanium surface. MATERIALS AND METHODS The MSLA surfaces were considered as the control group, and LT and LAT surfaces as test groups. Alkaline phosphatase expression (ALP) was used to quantify osteoblastic differentiation of MC3T3-E1 cell. Surface roughness was evaluated by a contact profilometer (URFPAK-SV; Mitutoyo, Kawasaki, Japan) and characterized by two parameters: mean roughness (Ra) and maximum peak-to-valley height (Rt). RESULTS Scanning electron microscope revealed that MSLA (control group) surface was not as rough as LT, LAT surface (test groups). Alkaline phosphatase expression, the measure of osteoblastic differentiation, and total ALP expression by surface-adherent cells were found to be highest at 21 days for all three surfaces tested (P<.05). Furthermore, ALP expression levels of MSLA and LAT surfaces were significantly higher than expression levels of LT surface-adherent cells at 7, 14, and 21 days, respectively (P<.05). However, ALP expression levels between MSLA and LAT surface were equal at 7, 14, and 21 days (P>.05). CONCLUSION This study suggested that MSLA and LAT surfaces exhibited more favorable environment for osteoblast differentiation when compared with LT surface, the results that are important for implant surface modification studies. PMID:27350860

  11. Metal etching with reactive gas cluster ion beams using pickup cell

    SciTech Connect

    Toyoda, Noriaki; Yamada, Isao

    2012-11-06

    Mixed gas cluster ion beams were formed using pickup cell for metal etching. O{sub 2} neutral clusters pick up acetic acid and formed mixed cluster beam. By using O{sub 2}-GCIB with acetic acid, enhancement of Cu etching was observed. Because of dense energy deposition by GCIB, etching of Cu proceeds by CuO formation, enhancement of chemical reaction with acetic acid and desorption of etching products. Surface roughening was not observed on poly crystalline Cu because of the small dependence of etching rate on crystal orientation. Halogen free and low-temperature metal etching with GCIB using pickup cell is possible.

  12. Sputtered gold mask for deep chemical etching of silicon

    NASA Technical Reports Server (NTRS)

    Pisciotta, B. P.; Gross, C.; Olive, R. S.

    1975-01-01

    Sputtered mask resists chemical attack from acid and has adherence to withstand prolonged submergence in etch solution without lifting from silicon surface. Even under prolonged etch conditions with significant undercutting, gold mask maintained excellent adhesion to silicon surface and imperviousness to acid.

  13. The Effects of Using a Commercial Grade Plasma Etching Chamber to Etch Anodized Niobium Surfaces

    NASA Astrophysics Data System (ADS)

    Epperson, Christiana; Drake, Dereth; Winska, Kalina

    2015-11-01

    Anodized niobium surfaces are used in particle accelerators for construction of the superconducting cavities. These surfaces must be cleaned regularly to remove containments and maintain the surface smoothness. The most common method used is that of chemically etching the surface using acid baths; however, this process can affect the smoothness of the layer and is extremely time consuming and hazardous. Plasma etching is one alternative that has shown great promise. We are using a commercial grade plasma etching chamber to clean anodized niobium samples that have varying oxide layer thicknesses. Spectral profiles of the surfaces of the samples are taken before and after etching. All measured results are compared to a simple theoretical model in order to determine the effects of the etching process on each surface.

  14. Spectrometric analysis of process etching solutions of the photovoltaic industry--determination of HNO3, HF, and H2SiF6 using high-resolution continuum source absorption spectrometry of diatomic molecules and atoms.

    PubMed

    Bücker, Stefan; Acker, Jörg

    2012-05-30

    The surface of raw multicrystalline silicon wafers is treated with HF-HNO(3) mixtures in order to remove the saw damage and to obtain a well-like structured surface of low reflectivity, the so-called texture. The industrial production of solar cells requires a consistent level of texturization for tens of thousands of wafers. Therefore, knowing the actual composition of the etch bath is a key element in process control in order to maintain a certain etch rate through replenishment of the consumed acids. The present paper describes a novel approach to quantify nitric acid (HNO(3)), hydrofluoric acid (HF), and hexafluosilicic acid (H(2)SiF(6)) using a high-resolution continuum source graphite furnace absorption spectrometer. The concentrations of Si (via Si atom absorption at the wavelength 251.611 nm, m(0),(Si)=130 pg), of nitrate (via molecular absorption of NO at the wavelength 214.803 nm, [Formula: see text] ), and of total fluoride (via molecular absorption of AlF at the wavelength 227.46 nm, m(0,F)=13 pg) were measured against aqueous standard solutions. The concentrations of H(2)SiF(6) and HNO(3) are directly obtained from the measurements. The HF concentration is calculated from the difference between the total fluoride content, and the amount of fluoride bound as H(2)SiF(6). H(2)SiF(6) and HNO(3) can be determined with a relative uncertainty of less than 5% and recoveries of 97-103% and 96-105%, respectively. With regards to HF, acceptable results in terms of recovery and uncertainty are obtained for HF concentrations that are typical for the photovoltaic industry. The presented procedure has the unique advantage that the concentration of both, acids and metal impurities in etch solutions, can be routinely determined by a single analytical instrument.

  15. Investigation of the neutral-solution etch process for refractive SOE antireflective surfaces

    SciTech Connect

    Maish, A.B.

    1991-01-01

    Antireflection of optically clear glass used in photovoltaic concentrator refractive secondary optical elements (SOE's) was investigated using the neutral-solution etch process developed by Schott Glass. Test coupons and SOE's made from barium zinc glass, which does not solarize under ultraviolet exposure, were successfully etched at the center point process variable conditions of 87{degrees}C and 24 hours. Reflectance of the plano-plano dropped from 7.7% to 0.8%, with a corresponding increase in transmission from 91.7% to 98.5%. The etching process uses non-hydrofluoric, relatively non-toxic chemicals in a low-cost process well suited for use by photovoltaic system manufacturers during production. 10 refs., 4 figs., 1 tab.

  16. Improved wet bonding of methyl methacrylate-tri-n-butylborane resin to dentin etched with ten percent phosphoric acid in the presence of ferric ions.

    PubMed

    Iwasaki, Yasuhiko; Toida, Tetsuya; Nakabayashi, Nobuo

    2004-03-01

    The objective of this study was to determine the influence of dissolved dentinal substances in demineralized dentin on the hybridization of resin for bonding to dentin. It was hypothesized that these substances, including polyelectrolytes, significantly change the substrates, which could then be assessed by the addition of Na(+), Ca(2+), or Fe(3+) in 10% phosphoric acid. Bovine dentin specimens were etched for 10 s with a solution of 10% phosphoric acid (control) or of 22.0 mM dissolved sodium chloride (10P-Na), calcium chloride (10P-Ca), or ferric chloride (10P-Fe). The specimens were then rinsed, blot-dried, and primed three times with 5% 4-methacryloyloxyethyl trimellitate anhydride in acetone for 60 s. Methyl methacrylate-tri-n-butylborane resin was then applied. The tensile bond strength of each of the dumbbell-shaped specimens was then measured. The fractured surfaces and modified cross-sections were examined by scanning electron microscopy. The cross-sections were soaked in 6N HCl for 10 s and then in 1% sodium hypochlorite for 30 min to determine the resin content in the hybridized specimens. Shrinkage of the demineralized dentins upon drying was assessed by atomic force microscopy. The tensile bond strengths were 10.8 +/- 4.5 (control), 15.0 +/- 7.0 (10P-Na), 19.3 +/- 5.5 (10P-Ca), and 27.8 +/- 8.1 (10P-Fe) MPa. The atomic force microscopy studies showed that Fe(3+) minimized the shrinkage by drying for 10 s but Ca(2+) and Na(+) did not decrease the shrinkage the same as the control. The results support the hypothesis that the monomer permeability of wet demineralized dentin is effectively improved by dissolving ferric ions in the phosphoric acid, resulting in a greater bond strength and higher resin content in the hybridized dentin. The dissolved dentinal substances, including the polyelectrolytes, had a significant influence on the characteristics of the demineralized dentin, changing the degree of hybridization and bonding.

  17. Simulation of Plasma Etching

    NASA Astrophysics Data System (ADS)

    Moroz, Paul; Moroz, Daniel

    2016-09-01

    Plasma is an indispensable tool in materials processing. It provides chemically and physically active species and directional flows of energetic species enabling deep etching with good straight profiles required by the industry. At present time, the only feasible methods of simulating the resulting feature profiles are those which fall within the scope of feature-scale (FS) simulation methods, utilizing engineering-type of reactions of incoming species with solid materials. At the same time, the molecule dynamics (MD) methods are emerging as an important alternative approach to simulating extremely small features with sizes below of a few nanometers. In our presentation, we discuss both FS methods implemented into the FPS3D code and MD methods implemented into the MDSS code. We also discuss the ways of extracting information about the reactions and interactions used in FS codes from the MD simulations utilizing the approach of interatomic potentials. For this presentation, we selected two types of simulation cases for etching. The first type considers simulation of mostly etching and implantation, such as during Si etching by chlorine-argon plasma. The second type considers ALE (atomic layer etch) when etching is done by a cyclic process of surface passivation/activation with the following process of etching/removal of a single atomic layer per cycle or per a few cycles, allowing ultimate processing accuracy. The simulations are carried out with both FS and MD codes to provide the data for relation and comparison between those two very different approaches.

  18. Optical properties of silicon nanowire arrays formed by metal-assisted chemical etching: evidences for light localization effect

    NASA Astrophysics Data System (ADS)

    Osminkina, Liubov A.; Gonchar, Kirill A.; Marshov, Vladimir S.; Bunkov, Konstantin V.; Petrov, Dmitry V.; Golovan, Leonid A.; Talkenberg, Florian; Sivakov, Vladimir A.; Timoshenko, Victor Yu

    2012-09-01

    We study the structure and optical properties of arrays of silicon nanowires (SiNWs) with a mean diameter of approximately 100 nm and length of about 1-25 μm formed on crystalline silicon (c-Si) substrates by using metal-assisted chemical etching in hydrofluoric acid solutions. In the middle infrared spectral region, the reflectance and transmittance of the formed SiNW arrays can be described in the framework of an effective medium with the effective refractive index of about 1.3 (porosity, approximately 75%), while a strong light scattering for wavelength of 0.3 ÷ 1 μm results in a decrease of the total reflectance of 1%-5%, which cannot be described in the effective medium approximation. The Raman scattering intensity under excitation at approximately 1 μm increases strongly in the sample with SiNWs in comparison with that in c-Si substrate. This effect is related to an increase of the light-matter interaction time due to the strong scattering of the excitation light in SiNW array. The prepared SiNWs are discussed as a kind of `black silicon', which can be formed in a large scale and can be used for photonic applications as well as in molecular sensing.

  19. Optical properties of silicon nanowire arrays formed by metal-assisted chemical etching: evidences for light localization effect.

    PubMed

    Osminkina, Liubov A; Gonchar, Kirill A; Marshov, Vladimir S; Bunkov, Konstantin V; Petrov, Dmitry V; Golovan, Leonid A; Talkenberg, Florian; Sivakov, Vladimir A; Timoshenko, Victor Yu

    2012-09-25

    We study the structure and optical properties of arrays of silicon nanowires (SiNWs) with a mean diameter of approximately 100 nm and length of about 1-25 μm formed on crystalline silicon (c-Si) substrates by using metal-assisted chemical etching in hydrofluoric acid solutions. In the middle infrared spectral region, the reflectance and transmittance of the formed SiNW arrays can be described in the framework of an effective medium with the effective refractive index of about 1.3 (porosity, approximately 75%), while a strong light scattering for wavelength of 0.3 ÷ 1 μm results in a decrease of the total reflectance of 1%-5%, which cannot be described in the effective medium approximation. The Raman scattering intensity under excitation at approximately 1 μm increases strongly in the sample with SiNWs in comparison with that in c-Si substrate. This effect is related to an increase of the light-matter interaction time due to the strong scattering of the excitation light in SiNW array. The prepared SiNWs are discussed as a kind of 'black silicon', which can be formed in a large scale and can be used for photonic applications as well as in molecular sensing.

  20. Dealloying of Cu-Based Metallic Glasses in Acidic Solutions: Products and Energy Storage Applications

    PubMed Central

    Wang, Zhifeng; Liu, Jiangyun; Qin, Chunling; Yu, Hui; Xia, Xingchuan; Wang, Chaoyang; Zhang, Yanshan; Hu, Qingfeng; Zhao, Weimin

    2015-01-01

    Dealloying, a famous ancient etching technique, was used to produce nanoporous metals decades ago. With the development of dealloying techniques and theories, various interesting dealloying products including nanoporous metals/alloys, metal oxides and composites, which exhibit excellent catalytic, optical and sensing performance, have been developed in recent years. As a result, the research on dealloying products is of great importance for developing new materials with superior physical and chemical properties. In this paper, typical dealloying products from Cu-based metallic glasses after dealloying in hydrofluoric acid and hydrochloric acid solutions are summarized. Several potential application fields of these dealloying products are discussed. A promising application of nanoporous Cu (NPC) and NPC-contained composites related to the energy storage field is introduced. It is expected that more promising dealloying products could be developed for practical energy storage applications. PMID:28347030

  1. Ion beam sputter etching

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Rutledge, Sharon K.

    1986-01-01

    An ion beam etching process which forms extremely high aspect ratio surface microstructures using thin sputter masks is utilized in the fabrication of integrated circuits. A carbon rich sputter mask together with unmasked portions of a substrate is bombarded with inert gas ions while simultaneous carbon deposition occurs. The arrival of the carbon deposit is adjusted to enable the sputter mask to have a near zero or even slightly positive increase in thickness with time while the unmasked portions have a high net sputter etch rate.

  2. Electrolytic etching process provides effective bonding surface on stainless steel

    NASA Technical Reports Server (NTRS)

    1966-01-01

    Electrolytic etching process prepares surfaces of a stainless steel shell for reliable, high strength adhesive bonding to dielectric materials. The process uses a 25 percent aqueous solution of phosphoric acid.

  3. Chemical downstream etching of tungsten

    SciTech Connect

    Blain, M.G.; Jarecki, R.L.; Simonson, R.J.

    1998-07-01

    The downstream etching of tungsten and tungsten oxide has been investigated. Etching of chemical vapor deposited tungsten and e-beam deposited tungsten oxide samples was performed using atomic fluorine generated by a microwave discharge of argon and NF{sub 3}. Etching was found to be highly activated with activation energies approximated to be 6.0{plus_minus}0.5thinspkcal/mol and 5.4{plus_minus}0.4thinspkcal/mol for W and WO{sub 3}, respectively. In the case of F etching of tungsten, the addition of undischarged nitric oxide (NO) directly into the reaction chamber results in the competing effects of catalytic etch rate enhancement and the formation of a nearly stoichiometric WO{sub 3} passivating tungsten oxide film, which ultimately stops the etching process. For F etching of tungsten oxide, the introduction of downstream NO reduces the etch rate. {copyright} {ital 1998 American Vacuum Society.}

  4. Effect of Ethylene diamine tetra acetic acid and sodium hypochlorite solution conditioning on microtensile bond strength of one-step self-etch adhesives

    PubMed Central

    Kasraei, Shahin; Azarsina, Mohadese; Khamverdi, Zahra

    2013-01-01

    Background: Attempts to improve bond strength of self-etch adhesives can enhance the durability of composite restorations. Aims: The aim of the present study was to evaluate the effect of collagen and smear layer removal with sodium hypochlorite solution (NaOCl) and EDTA on micro-tensile bond strength (μTBS) of self-etch adhesives to dentin. Settings and Design: It was an in-vitro study. Materials and Methods: Seventy-two teeth were divided into eight groups and their crowns were ground perpendicular to their long axis to expose dentin. The teeth were polished with silicon-carbide papers. The groups were treated as follows: No conditioning, 0.5-M EDTA conditioning, 2.5% NaOCl conditioning, NaOCl + EDTA conditioning. The surfaces were rinsed and blot-dried. Clearfil S3 and I-Bond were applied according to manufacturers’ instructions and restored with Z100 composite. After 500 cycles of thermo-cycling between 5°C and 55°C, the samples were sectioned and tested for μTBS. Statistical Analysis: Data were analyzed by two-way ANOVA and Tukey-HSD test. Results: The highest μTBS was recorded with Clearfil S3 + NaOCl + EDTA, and the lowest was recorded with I-Bond without conditioning. μTBS in EDTA-and EDTA + NaOCl-treated groups was significantly higher than the control and NaOCl-conditioned groups. Conclusions: Application of EDTA or EDTA + NaOCl before one-step self-etch adhesives increased μTBS. PMID:23833459

  5. Atomic force microscopy observation of enamel surfaces treated with self-etching primer.

    PubMed

    Hashimoto, Yusuke; Hashimoto, Yoshiya; Nishiura, Aki; Matsumoto, Naoyuki

    2013-01-01

    Orthodontists use a self-etching adhesive system when attaching brackets to enamel. The purpose of this study was to evaluate the erosion effects of common clinically used adhesive systems on human enamel surfaces by atomic force microscopy (AFM). Four commercially available adhesive systems (i. e., Kurasper F, Beauty Ortho Bond, Orthophia LC, and Transbond XT) were applied to ground enamel surfaces of extracted human teeth. Enamel surface roughness (ESR), absolute depth profile (ADP), and surface hardness were evaluated by AFM. The ESR and ADP were significantly higher after the pretreatment with the phosphoric acid-etching adhesive system than after the pretreatments with the three self-etching adhesive systems. The surface nanohardness decreased after the pretreatment with the phosphoric acid-etching adhesive system but increased after the pretreatments with the self-etching adhesive systems. These results suggest that the use of a self-etching primer for enamel conditioning might prevent decalcification caused by phosphoric acid etching.

  6. Optical scattering modeling of etched ZnO:Al superstrates and device simulation studies of a-Si:H solar cells with different texture morphologies.

    PubMed

    Yan, Xia; Li, Weimin; Aberle, Armin G; Venkataraj, Selvaraj

    2016-08-20

    Transparent conductive oxide (TCO) materials have been widely used as the front electrodes of thin-film amorphous silicon (a-Si:H) solar cells. To improve the performance of solar cells, textured front TCO is required as the optical layer which effectively scatters the incoming light and thus enhances the photon absorption within the device. One promising TCO material is aluminum-doped zinc oxide (AZO), which is most commonly prepared by magnetron sputtering. After deposition, sputtered AZO films are typically wet-chemically etched using diluted hydrochloric (HCl) or hydrofluoric (HF) acid to obtain rough surface morphologies. In this paper, we report the effects of a textured AZO front electrode on the performance of a-Si:H solar cells based on optical scattering modeling and electrical device simulations, involving four different AZO surface morphologies. The simulated light scattering behaviors indicate that a better textured surface not only scatters more light, but also allows more light get transmitted into the absorber (∼90% of visible light), due to greatly reduced front reflection by the rough surface. Device simulation results show that the two-step AZO texturing process should give improved a-Si:H solar cell performance, with an enhanced short-circuit current density of 16.5  mA/cm2, which leads to a high photovoltaic (PV) efficiency of 9.9%.

  7. Orthodox etching of HVPE-grown GaN

    SciTech Connect

    Weyher, J.L.; Lazar, S.; Macht, L.; Liliental-Weber, Z.; Molnar,R.J.; Muller, S.; Nowak, G.; Grzegory, I.

    2006-08-10

    Orthodox etching of HVPE-grown GaN in molten eutectic of KOH + NaOH (E etch) and in hot sulfuric and phosphoric acids (HH etch) is discussed in detail. Three size grades of pits are formed by the preferential E etching at the outcrops of threading dislocations on the Ga-polar surface of GaN. Using transmission electron microscopy (TEM) as the calibration tool it is shown that the largest pits are formed on screw, intermediate on mixed and the smallest on edge dislocations. This sequence of size does not follow the sequence of the Burgers values (and thus the magnitude of the elastic energy) of corresponding dislocations. This discrepancy is explained taking into account the effect of decoration of dislocations, the degree of which is expected to be different depending on the lattice deformation around the dislocations, i.e. on the edge component of the Burgers vector. It is argued that the large scatter of optimal etching temperatures required for revealing all three types of dislocations in HVPE-grown samples from different sources also depends upon the energetic status of dislocations. The role of kinetics for reliability of etching in both etches is discussed and the way of optimization of the etching parameters is shown.

  8. Enhanced ferro-actuator with a porosity-controlled membrane using the sol-gel process and the HF etching method

    NASA Astrophysics Data System (ADS)

    Kim, KiSu; Ko, Seong Young; Park, Jong-Oh; Park, Sukho

    2016-01-01

    In this paper, we propose a ferro-actuator using a porous polyvinylidene difluoride (PVDF) membrane. In detail, we fabricated the silica-embedded PVDF membrane using a sol-gel process with PVDF solution and tetraethyl orthosilicate (TEOS) solution, where the size of the silica was determined by the ratio of the PVDF and TEOS solutions. Using hydrofluoric acid (HF) etching, the silica were removed from the silica-embedded PVDF membrane, and porous PVDF membranes with different porosities were obtained. Finally, through absorption of a ferrofluid on the porous PVDF membrane, the proposed ferro-actuator using porous PVDF membranes with different porosities was fabricated. We executed the characterization and actuation test as follows. First, the silica size of the silica-embedded PVDF membrane and the pore size of the porous PVDF membrane were analyzed using scanning electron microscopy (SEM) imaging. Second, energy-dispersive x-ray spectroscopy analysis showed that the silica had clearly been removed from the silica-embedded PVDF membrane by HF etching. Third, through x-ray photoelectron spectroscopy and vibrating sample magnetometer (VSM) of the ferro-actuators, we found that more ferrofluids were absorbed by the porous PVDF membrane when the pore of the membrane was smaller and uniformly distributed. Finally, we executed tip displacement and a blocking force test of the proposed ferro-actuator using the porous PVDF membrane. Similar to the VSM result, the ferro-actuator that used a porous PVDF membrane with smaller pores exhibited better actuation performance. The ferro-actuator that used a porous PVDF membrane displayed a tip displacement that was about 7.2-fold better and a blocking force that was about 6.5-fold better than the ferro-actuator that used a pure PVDF membrane. Thus, we controlled the pore size of the porous PVDF membrane and enhanced the actuation performance of the ferro-actuator using a porous PVDF membrane.

  9. Photoelectrochemical etching of gallium nitride surface by complexation dissolution mechanism

    NASA Astrophysics Data System (ADS)

    Zhang, Miao-Rong; Hou, Fei; Wang, Zu-Gang; Zhang, Shao-Hui; Pan, Ge-Bo

    2017-07-01

    Gallium nitride (GaN) surface was etched by 0.3 M ethylenediamine tetraacetic acid disodium (EDTA-2Na) via photoelectrochemical etching technique. SEM images reveal the etched GaN surface becomes rough and irregular. The pore density is up to 1.9 × 109 per square centimeter after simple acid post-treatment. The difference of XPS spectra of Ga 3d, N 1s and O 1s between the non-etched and freshly etched GaN surfaces can be attributed to the formation of Ga-EDTA complex at the etching interface between GaN and EDTA-2Na. The proposed complexation dissolution mechanism can be broadly applicable to almost all neutral etchants under the prerequisite of strong light and electric field. From the point of view of environment, safety and energy, EDTA-2Na has obvious advantages over conventionally corrosive etchants. Moreover, as the further and deeper study of such nearly neutral etchants, GaN etching technology has better application prospect in photoelectric micro-device fabrication.

  10. Self-etch adhesive systems: a literature review.

    PubMed

    Giannini, Marcelo; Makishi, Patrícia; Ayres, Ana Paula Almeida; Vermelho, Paulo Moreira; Fronza, Bruna Marin; Nikaido, Toru; Tagami, Junji

    2015-01-01

    This paper presents the state of the art of self-etch adhesive systems. Four topics are shown in this review and included: the historic of this category of bonding agents, bonding mechanism, characteristics/properties and the formation of acid-base resistant zone at enamel/dentin-adhesive interfaces. Also, advantages regarding etch-and-rinse systems and classifications of self-etch adhesive systems according to the number of steps and acidity are addressed. Finally, issues like the potential durability and clinical importance are discussed. Self-etch adhesive systems are promising materials because they are easy to use, bond chemically to tooth structure and maintain the dentin hydroxyapatite, which is important for the durability of the bonding.

  11. Unveiling the wet chemical etching characteristics of polydimethylsiloxane film for soft micromachining applications

    NASA Astrophysics Data System (ADS)

    Kakati, A.; Maji, D.; Das, S.

    2017-01-01

    Micromachining of a polydimethylsiloxane (PDMS) microstructure by wet chemical etching is explored for microelectromechanical systems (MEMS) and microfluidic applications. A 100 µm thick PDMS film was patterned with different microstructure designs by wet chemical etching using a N-methyl-2-pyrrolidone (C16H36FN) and tetra-n-butylammonium fluoride (C5H9NO) mixture solution with 3:1 volume ratio after lithography for studying etching characteristics. The patterning parameters, such as etch rate, surface roughness, pH of etchant solution with time, were thoroughly investigated. A detailed study of surface morphology with etching time revealed nonlinear behaviour of the PDMS surface roughness and etch rate. A maximum rate of 1.45 µm min-1 for 10 min etching with surface roughness of 360 nm was achieved. A new approach of wet chemical etching with pH controlled doped etchant was introduced for lower surface roughness of etched microstructures, and a constant etch rate during etching. Variation of the etching rate and surface roughness by pH controlled etching was performed by doping 5-15 gm l-1 of silicic acid (SiO2x H2O) into the traditional etchant solution. PDMS etching by silicic acid doped etchant solution showed a reduction in surface roughness from 400 nm to 220 nm for the same 15 µm etching. This study is beneficial for micromachining of various MEMS and microfluidic structures such as micropillars, microchannels, and other PDMS microstructures.

  12. Effects of different silanes and acid concentrations on bond strength of brackets to porcelain surfaces.

    PubMed

    Trakyali, Göksu; Malkondu, Ozlem; Kazazoğlu, Ender; Arun, Tülin

    2009-08-01

    The aim of this study was to determine the optimum silane-coupling agent and the optimum concentration of acid agent when bonding to porcelain surfaces. Eighty deglazed feldspathic porcelain discs with a diameter of 10 mm and a thickness of 2 mm mounted in acrylic resin blocks were randomly divided into four groups. In groups 1 and 2, the porcelain surfaces were etched with 9.6 per cent hydrofluoric (HF) acid and in groups 3 and 4 with 5 per cent HF acid. In groups 1 and 3, the Dynalock maxillary central incisor brackets were bonded with Pulpdent silane and Unite bonding adhesive and in groups 2 and 4 with Reliance silane and Unite. Shear forces were applied to the samples using an Instron universal test machine. The non-parametric Kruskal-Wallis test was used to determine significant differences in bond strengths between the four groups and Dunn's multiple comparison test to compare subgroups. The mean bond strengths and standard deviations of groups 1 to 4 were 5.51 +/- 1.19, 6.54 +/- 0.002, 4.55 +/- 1.93, and 6.39 +/- 0.45 MPa, respectively. Specimens bonded with Reliance showed a statistically significantly higher in vitro bond strength than those bonded with Pulpdent. The concentration of etching gels did not result in any statistically significant difference on the in vitro bond strength when evaluated separately.

  13. Incinerator ash dissolution model for the system: Plutonium, nitric acid and hydrofluoric acid

    SciTech Connect

    Brown, E V

    1988-06-01

    This research accomplished two goals. The first was to develop a computer program to simulate a cascade dissolver system. This program would be used to predict the bulk rate of dissolution in incinerator ash. The other goal was to verify the model in a single-stage dissolver system using Dy/sub 2/O/sub 3/. PuO/sub 2/ (and all of the species in the incinerator ash) was assumed to exist as spherical particles. A model was used to calculate the bulk rate of plutonium oxide dissolution using fluoride as a catalyst. Once the bulk rate of PuO/sub 2/ dissolution and the dissolution rate of all soluble species were calculated, mass and energy balances were written. A computer program simulating the cascade dissolver system was then developed. Tests were conducted on a single-stage dissolver. A simulated incinerator ash mixture was made and added to the dissolver. CaF/sub 2/ was added to the mixture as a catalyst. A 9M HNO/sub 3/ solution was pumped into the dissolver system. Samples of the dissolver effluent were analyzed for dissolved and F concentrations. The computer program proved satisfactory in predicting the F concentrations in the dissolver effluent. The experimental sparge air flow rate was predicted to within 5.5%. The experimental percentage of solids dissolved (51.34%) compared favorably to the percentage of incinerator ash dissolved (47%) in previous work. No general conclusions on model verification could be reached. 56 refs., 11 figs., 24 tabs.

  14. A wet etching technique for accurate etching of GaAs/AlAs distributed Bragg reflectors

    SciTech Connect

    Bacher, K.; Harris, J.S. Jr.

    1995-07-01

    The authors have demonstrated a wet etching technique capable of producing accurate and uniform etch depths in distributed Bragg reflectors (DBRs) and other GaAs/AlAs superlattice structures. The process utilizes two selective etchants, citric acid/hydrogen peroxide in a 4:1 ratio and phosphoric acid/hydrogen peroxide/water in a 3:1:50 ratio, to sequentially etch away each pair of superlattice layers. The authors have used this technique to expose a 680 {angstrom} thick conduction GaAs layer buried beneath a 15 period, 2.1 {micro}m thick, undoped GaAs/AlAs DBR mirror. Transmission line measurements pads were formed on the exposed layer to determine the contact and sheet resistance. Comparison with a similar layer on the surface of the wafer reveals that the exposed layer is easily contacted with only a slight increase in sheet resistance indicating less than 125 {angstrom} of overetching, 0.6% of the total etch depth.

  15. Individualized Learning Package about Etching.

    ERIC Educational Resources Information Center

    Sauer, Michael J.

    An individualized learning package provides step-by-step instruction in the fundamentals of the etching process. Thirteen specific behavioral objectives are listed. A pretest, consisting of matching 15 etching terms with their definitions, is provided along with an answer key. The remainder of the learning package teaches the 13 steps of the…

  16. Ultrasonic metal etching for metallographic analysis

    NASA Technical Reports Server (NTRS)

    Young, S. G.

    1971-01-01

    Ultrasonic etching delineates microstructural features not discernible in specimens prepared for metallographic analysis by standard chemical etching procedures. Cavitation bubbles in ultrasonically excited water produce preferential damage /etching/ of metallurgical phases or grain boundaries, depending on hardness of metal specimens.

  17. Plasma etching of cesium iodide

    NASA Astrophysics Data System (ADS)

    Yang, X.; Hopwood, J.; Tipnis, S.; Nagarkar, V.; Gaysinskiy, V.

    2002-01-01

    Thick films of cesium iodide (CsI) are often used to convert x-ray images into visible light. Spreading of the visible light within CsI, however, reduces the resolution of the resulting image. Anisotropic etching of the CsI film into an array of micropixels can improve the image resolution by confining light within each pixel. The etching process uses a high-density inductively coupled plasma to pattern CsI samples held by a heated, rf-biased chuck. Fluorine-containing gases such as CF4 are found to enhance the etch rate by an order of magnitude compared to Ar+ sputtering alone. Without inert-gas ion bombardment, however, the CF4 etch becomes self-limited within a few microns of depth due to the blanket deposition of a passivation layer. Using CF4+Ar continuously removes this layer from the lateral surfaces, but the formation of a thick passivation layer on the unbombarded sidewalls of etched features is observed by scanning electron microscopy. At a substrate temperature of 220 °C, the minimum ion-bombardment energy for etching is Ei~50 eV, and the rate depends on Ei1/2 above 65 eV. In dilute mixtures of CF4 and Ar, the etch rate is proportional to the gas-phase density of atomic fluorine. Above 50% CF4, however, the rate decreases, indicating the onset of net surface polymer deposition. These observations suggest that anisotropy is obtained through the ion-enhanced inhibitor etching mechanism. Etching exhibits an Arrhenius-type behavior in which the etch rate increases from ~40 nm/min at 40 °C to 380 nm/min at 330 °C. The temperature dependence corresponds to an activation energy of 0.13+/-0.01 eV. This activation energy is consistent with the electronic sputtering mechanism for alkali halides.

  18. Submicron patterned metal hole etching

    DOEpatents

    McCarthy, Anthony M.; Contolini, Robert J.; Liberman, Vladimir; Morse, Jeffrey

    2000-01-01

    A wet chemical process for etching submicron patterned holes in thin metal layers using electrochemical etching with the aid of a wetting agent. In this process, the processed wafer to be etched is immersed in a wetting agent, such as methanol, for a few seconds prior to inserting the processed wafer into an electrochemical etching setup, with the wafer maintained horizontal during transfer to maintain a film of methanol covering the patterned areas. The electrochemical etching setup includes a tube which seals the edges of the wafer preventing loss of the methanol. An electrolyte composed of 4:1 water: sulfuric is poured into the tube and the electrolyte replaces the wetting agent in the patterned holes. A working electrode is attached to a metal layer of the wafer, with reference and counter electrodes inserted in the electrolyte with all electrodes connected to a potentiostat. A single pulse on the counter electrode, such as a 100 ms pulse at +10.2 volts, is used to excite the electrochemical circuit and perform the etch. The process produces uniform etching of the patterned holes in the metal layers, such as chromium and molybdenum of the wafer without adversely effecting the patterned mask.

  19. ZERODUR: bending strength data for etched surfaces

    NASA Astrophysics Data System (ADS)

    Hartmann, Peter; Leys, Antoine; Carré, Antoine; Kerz, Franca; Westerhoff, Thomas

    2014-07-01

    In a continuous effort since 2007 a considerable amount of new data and information has been gathered on the bending strength of the extremely low thermal expansion glass ceramic ZERODUR®. By fitting a three parameter Weibull distribution to the data it could be shown that for homogenously ground surfaces minimum breakage stresses exist lying much higher than the previously applied design limits. In order to achieve even higher allowable stress values diamond grain ground surfaces have been acid etched, a procedure widely accepted as strength increasing measure. If surfaces are etched taking off layers with thickness which are comparable to the maximum micro crack depth of the preceding grinding process they also show statistical distributions compatible with a three parameter Weibull distribution. SCHOTT has performed additional measurement series with etch solutions with variable composition testing the applicability of this distribution and the possibility to achieve further increase of the minimum breakage stress. For long term loading applications strength change with time and environmental media are important. The parameter needed for prediction calculations which is combining these influences is the stress corrosion constant. Results from the past differ significantly from each other. On the basis of new investigations better information will be provided for choosing the best value for the given application conditions.

  20. Northern Arabia Etched Terrain

    NASA Technical Reports Server (NTRS)

    2002-01-01

    (Released 23 May 2002) The Science Many places on Mars display scabby, eroded landscapes that commonly are referred to as etched terrain. These places have a ragged, tortured look that reveals a geologic history of intense deposition and erosion. This THEMIS image shows such a place. Here a 10 km diameter crater is superposed on the floor of a 40 km diameter crater, most of which is outside of the image but apparent in the MOLA context image. The rugged crater rim material intermingles with low, flat-topped mesas and layers with irregular outlines along with dune-like ridges on many of the flat surfaces. The horizontal layers that occur throughout the scene at different elevations are evidence of repeated episodes of deposition. The apparent ease with which these deposits have been eroded, most likely by wind, suggests that they are composed of poorly consolidated material. Air-fall sediments are the likely candidate for this material rather than lava flows. The dune-like ridges are probably inactive granule ripples produced from the interaction of wind and erosional debris. The large interior crater displays features that are the result of deposition and subsequent erosion. Its raised rim is barely discernable due to burial while piles and blocks of slumped material along the interior circumference attest to the action of erosion. Some of the blocks retain the same texture as the surrounding undisrupted surface. It appears as if the crater had been buried long enough for the overlying material to be eroded into the texture seen today. Then at some point this overburden foundered and collapsed into the crater. Continuing erosion has caused the upper layer to retreat back from what was probably the original rim of the crater, producing the noncircular appearance seen today. The length of time represented by this sequence of events as well as the conditions necessary to produce them are unknown. The Story Have you ever seen an ink etching, where the artistic cross

  1. Etching and Growth of GaAs

    NASA Technical Reports Server (NTRS)

    Seabaugh, A. C.; Mattauch, R., J.

    1983-01-01

    In-place process for etching and growth of gallium arsenide calls for presaturation of etch and growth melts by arsenic source crystal. Procedure allows precise control of thickness of etch and newly grown layer on substrate. Etching and deposition setup is expected to simplify processing and improve characteristics of gallium arsenide lasers, high-frequency amplifiers, and advanced integrated circuits.

  2. Controlled in situ etch-back

    NASA Technical Reports Server (NTRS)

    Mattauch, R. J.; Seabaugh, A. C. (Inventor)

    1981-01-01

    A controlled in situ etch-back technique is disclosed in which an etch melt and a growth melt are first saturated by a source-seed crystal and thereafter etch-back of a substrate takes place by the slightly undersaturated etch melt, followed by LPE growth of a layer by the growth melt, which is slightly supersaturated.

  3. Etching Of Semiconductor Wafer Edges

    DOEpatents

    Kardauskas, Michael J.; Piwczyk, Bernhard P.

    2003-12-09

    A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.

  4. Method of etching zirconium diboride

    SciTech Connect

    Heath, L.S.; Kwiatkowski, B.

    1988-03-31

    The invention described herein may be manufactured, used, and licensed by or for the Government for governmental purposes without the payment to us of any royalty thereon. This invention relates in general to a method of etching, zirconium diboride(ZrB/sub 2/) and, in particular, to a method of dry etching a thin film of ZrB/sub 2/ that has been deposited onto a substrate and patterned using photolithography. U.S. patent application S.N. 156, 124, filed 16 February, 1988, of Linda S. Heath for Method of Etching Titanium Diboride and assigned to a common assignee and with which this application is copending describes and claims a method of etching titanium diboride with a dry etch. Zirconium diboride, like titanium diboride, TiB/sub 2/, has become of interest in laboratory research because of its resistance to change or degradation at high temperatures. By adjusting the process parameters, one is able to attain etch rates of 67 to 140 A/min for ZrB/sub 2/. This is useful for patterning ZrB/sub 2/ as a diffusion barrier or a Schottky contact to semiconductors. The ZrB/sub 2/ film may be on a GaAs substrate.

  5. Decontamination of metals using chemical etching

    DOEpatents

    Lerch, Ronald E.; Partridge, Jerry A.

    1980-01-01

    The invention relates to chemical etching process for reclaiming contaminated equipment wherein a reduction-oxidation system is included in a solution of nitric acid to contact the metal to be decontaminated and effect reduction of the reduction-oxidation system, and includes disposing a pair of electrodes in the reduced solution to permit passage of an electrical current between said electrodes and effect oxidation of the reduction-oxidation system to thereby regenerate the solution and provide decontaminated equipment that is essentially radioactive contamination-free.

  6. Femtosecond laser etching of dental enamel for bracket bonding.

    PubMed

    Kabas, Ayse Sena; Ersoy, Tansu; Gülsoy, Murat; Akturk, Selcuk

    2013-09-01

    The aim is to investigate femtosecond laser ablation as an alternative method for enamel etching used before bonding orthodontic brackets. A focused laser beam is scanned over enamel within the area of bonding in a saw tooth pattern with a varying number of lines. After patterning, ceramic brackets are bonded and bonding quality of the proposed technique is measured by a universal testing machine. The results are compared to the conventional acid etching method. Results show that bonding strength is a function of laser average power and the density of the ablated lines. Intrapulpal temperature changes are also recorded and observed minimal effects are observed. Enamel surface of the samples is investigated microscopically and no signs of damage or cracking are observed. In conclusion, femtosecond laser exposure on enamel surface yields controllable patterns that provide efficient bonding strength with less removal of dental tissue than conventional acid-etching technique.

  7. Dry Ice Etches Terrain

    NASA Technical Reports Server (NTRS)

    2007-01-01

    [figure removed for brevity, see original site] Figure 1

    Every year seasonal carbon dioxide ice, known to us as 'dry ice,' covers the poles of Mars. In the south polar region this ice is translucent, allowing sunlight to pass through and warm the surface below. The ice then sublimes (evaporates) from the bottom of the ice layer, and carves channels in the surface.

    The channels take on many forms. In the subimage shown here (figure 1) the gas from the dry ice has etched wide shallow channels. This region is relatively flat, which may be the reason these channels have a different morphology than the 'spiders' seen in more hummocky terrain.

    Observation Geometry Image PSP_003364_0945 was taken by the High Resolution Imaging Science Experiment (HiRISE) camera onboard the Mars Reconnaissance Orbiter spacecraft on 15-Apr-2007. The complete image is centered at -85.4 degrees latitude, 104.0 degrees East longitude. The range to the target site was 251.5 km (157.2 miles). At this distance the image scale is 25.2 cm/pixel (with 1 x 1 binning) so objects 75 cm across are resolved. The image shown here has been map-projected to 25 cm/pixel . The image was taken at a local Mars time of 06:57 PM and the scene is illuminated from the west with a solar incidence angle of 75 degrees, thus the sun was about 15 degrees above the horizon. At a solar longitude of 219.6 degrees, the season on Mars is Northern Autumn.

  8. Bonding with self-etching primers--pumice or pre-etch? An in vitro study.

    PubMed

    Fitzgerald, Ian; Bradley, Gerard T; Bosio, Jose A; Hefti, Arthur F; Berzins, David W

    2012-04-01

    The purpose of this study was to compare the shear bond strengths (SBSs) of orthodontic brackets bonded with self-etching primer (SEP) using different enamel surface preparations. A two-by-two factorial study design was used. Sixty human premolars were harvested, cleaned, and randomly assigned to four groups (n = 15 per group). Teeth were bathed in saliva for 48 hours to form a pellicle. Treatments were assigned as follows: group 1 was pumiced for 10 seconds and pre-etched for 5 seconds with 37 per cent phosphoric acid before bonding with SEP (Transbond Plus). Group 2 was pumiced for 10 seconds before bonding. Group 3 was pre-etched for 5 seconds before bonding. Group 4 had no mechanical or chemical preparation before bonding. All teeth were stored in distilled water for 24 hours at 37°C before debonding. The SBS values and adhesive remnant index (ARI) score were recorded. The SBS values (± 1 SD) for groups 1-4 were 22.9 ± 6.6, 16.1 ± 7.3, 36.2 ± 8.2, and 13.1 ± 10.1 MPa, respectively. Two-way analysis of variance and subsequent contrasts showed statistically significant differences among treatment groups. ARI scores indicated the majority of adhesive remained on the bracket for all four groups. Pre-etching the bonding surface for 5 seconds with 37 per cent phosphoric acid, instead of pumicing, when using SEPs to bond orthodontic brackets, resulted in greater SBSs.

  9. State of the art etch-and-rinse adhesives

    PubMed Central

    Pashley, David H; Tay, Franklin R; Breschi, Lorenzo; Tjäderhane, Leo; Carvalho, Ricardo M; Carrilho, Marcela; Tezvergil-Mutluay, Arzu

    2013-01-01

    Etch-and-rinse adhesive systems are the oldest of the multi-generation evolution of resin bonding systems. In the 3-step version, they involve acid-etching, priming and application of a separate adhesive. Each step can accomplish multiple goals. This review explores the therapeutic opportunities of each separate step. Acid-etching, using 32-37% phosphoric acid (pH 0.1-0.4) not only simultaneously etches enamel and dentin, but the low pH kills many residual bacteria. Some etchants include anti-microbial compounds such as benzalkonium chloride that also inhibits matrix metalloproteinases (MMPs) in dentin. Primers are usually water and HEMA-rich solutions that ensure complete expansion of the collagen fibril meshwork and wet the collagen with hydrophilic monomers. However, water alone can re-expand dried dentin and can also serve as a vehicle for protease inhibitors or protein cross-linking agents that may increase the durability of resin-dentin bonds. In the future, ethanol or other water-free solvents may serve as dehydrating primers that may also contain antibacterial quaternary ammonium methacrylates to inhibit dentin MMPs and increase the durability of resin-dentin bonds. The complete evaporation of solvents is nearly impossible. Manufacturers may need to optimize solvent concentrations. Solvent-free adhesives can seal resin-dentin interfaces with hydrophobic resins that may also contain fluoride and antimicrobial compounds. Etch-and-rinse adhesives produce higher resin-dentin bonds that are more durable than most 1 and 2-step adhesives. Incorporation of protease inhibitors in etchants and/or cross-linking agents in primers may increase the durability of resin-dentin bonds. The therapeutic potential of etch-and-rinse adhesives has yet to be fully exploited. PMID:21112620

  10. Regenerative Electroless Etching of Silicon.

    PubMed

    Kolasinski, Kurt W; Gimbar, Nathan J; Yu, Haibo; Aindow, Mark; Mäkilä, Ermei; Salonen, Jarno

    2017-01-09

    Regenerative electroless etching (ReEtching), described herein for the first time, is a method of producing nanostructured semiconductors in which an oxidant (Ox1 ) is used as a catalytic agent to facilitate the reaction between a semiconductor and a second oxidant (Ox2 ) that would be unreactive in the primary reaction. Ox2 is used to regenerate Ox1 , which is capable of initiating etching by injecting holes into the semiconductor valence band. Therefore, the extent of reaction is controlled by the amount of Ox2 added, and the rate of reaction is controlled by the injection rate of Ox2 . This general strategy is demonstrated specifically for the production of highly luminescent, nanocrystalline porous Si from the reaction of V2 O5 in HF(aq) as Ox1 and H2 O2 (aq) as Ox2 with Si powder and wafers.

  11. Effects of Acid Treatment on Dental Zirconia: An In Vitro Study

    PubMed Central

    Xie, Haifeng; Shen, Shuping; Qian, Mengke; Zhang, Feimin; Chen, Chen; Tay, Franklin R.

    2015-01-01

    The aim of this study was to evaluate the effects of hydrofluoric (HF) acid, acetic acid, and citric acid treatments on the physical properties and structure of yttria-stabilized tetragonal zirconia polycrystal (Y-TZP) at ambient temperature. In total, 110 bar-shaped zirconia specimens were randomly assigned to 11 groups. The specimens in the control group (C) received no surface treatment, while those in the Cage group were hydrothermally aged at 134°C and 0.2 MPa for 20 h. Ten specimens each were immersed at ambient temperature in 5% and 40% HF acid for 2 h (40HF0), 1 day (5HF1, 40HF1), and 5 days (5HF5, 40HF5), while 10 each were immersed at ambient temperature in 10% acetic acid and 20% citric acid for 7 (AC7, CI7) and 14 days (AC14, CI14). X-ray diffraction (XRD) was used to quantitatively estimate the monoclinic phase. Furthermore, flexural strength, surface roughness, and surface Vickers hardness were measured after treatment. Scanning electron microscopy (SEM) was used to characterize the surface morphology. The Cage group specimens exhibited an increased monoclinic phase and flexural strength. Furthermore, 40% HF acid immersion decreased the flexural strength and surface hardness and deteriorated the surface finish, while 5% HF acid immersion only decreased the surface hardness. All the HF acid-immersed specimens showed an etched surface texture on SEM observations, while the other groups did not. These findings suggest that the treatment of Y-TZP with 40% HF acid at ambient temperature causes potential damage, while treatment with 5% HF acid, acetic acid, and citric acid is safe. PMID:26301413

  12. Modification of the Surface Topography and Composition of Ultrafine and Coarse Grained Titanium by Chemical Etching

    PubMed Central

    Nazarov, Denis V.; Zemtsova, Elena G.; Solokhin, Alexandr Yu.; Valiev, Ruslan Z.; Smirnov, Vladimir M.

    2017-01-01

    In this study, we present the detailed investigation of the influence of the etching medium (acidic or basic Piranha solutions) and the etching time on the morphology and surface relief of ultrafine grained (UFG) and coarse grained (CG) titanium. The surface relief and morphology have been studied by means of scanning electron microscopy (SEM), atomic force microscopy (AFM), and the spectral ellipsometry. The composition of the samples has been determined by X-ray fluorescence analysis (XRF) and X-ray Photoelectron Spectroscopy (XPS). Significant difference in the etching behavior of UFG and CG titanium has been found. UFG titanium exhibits higher etching activity independently of the etching medium. Formed structures possess higher homogeneity. The variation of the etching medium and time leads to micro-, nano-, or hierarchical micro/nanostructures on the surface. Significant difference has been found between surface composition for UFG titanium etched in basic and acidic Piranha solution. Based on the experimental data, the possible reasons and mechanisms are considered for the formation of nano- and microstructures. The prospects of etched UFG titanium as the material for implants are discussed. PMID:28336849

  13. Fluoride exposure from hydrofluoric acid in a motor gasoline alkylation unit

    SciTech Connect

    Brown, M.G.

    1985-11-01

    To assess the possible health risks associated with occupational exposure to gaseous fluoride, air and biological monitoring surveys were carried out at a motor gasoline alkylation unit within an oil refinery. Pre- and post-shift urinary fluoride measurements were obtained from 27 male operators and maintenance workers attached to the plant; personal fluoride-in-air monitoring was carried out simultaneously for 23 of these men. All readings were below NIOSH recommendations and Australia exposure standards. Significant exposure identified by changes in urine level during the shift could be demonstrated only in sub-groups of workers whose jobs involved higher routine exposures. No significant correlation between air levels and changes in urinary fluoride during the shift could be demonstrated. This survey indicates that the workers in this plant are not at risk of chronic fluorosis.

  14. Supply Chain Modeling for Fluorspar and Hydrofluoric Acid and Implications for Further Analyses

    DTIC Science & Technology

    2015-04-01

    for other materials in the FY 2015 NDS Requirements Report, potential market responses to the fluorspar and HF shortfalls have been evaluated to...Information Services Limited, Fluorspar: Global Industry Markets and Outlook, 11th ed (London: Roskill, 2013), 19, 143. 7 Thomason, Analyses for the 2015...Industry Markets and Outlook, 142–144. 9 Department of Defense, Strategic and Critical Materials 2013 Report on Stockpile Requirements (Washington, DC

  15. Hydrofluoric acid dermal burns. An assessment of treatment efficacy using an experimental pig model.

    PubMed

    Dunn, B J; MacKinnon, M A; Knowlden, N F; Billmaier, D J; Derelanko, M J; Rusch, G M; Naas, D J; Dahlgren, R R

    1992-09-01

    There currently exist various opinions concerning the best therapy for managing hydrogen fluoride (HF) dermal burns. Previously reported animal studies designed to evaluate the efficacy of certain therapies are not completely convincing. Studies initially were conducted to develop a reliable animal model for assessing efficacy of treatment. Evaluation of several animal species, dosing regimens (HF concentrations, exposure periods), and application techniques showed that the most consistent and reproducible dermal lesions were produced with 38% HF applied to the skin of anesthetized pigs for exposures of 9, 12, or 15 minutes using Hill Top Chamber patches. Using this model, the efficacy of six clinically applicable treatments was assessed by subjectively scoring and statistically analyzing photographic and histopathological data obtained from treated and untreated control lesions. Photographic data analysis ranked treatments with respect to effectiveness as follows: iced Zephiran and 10% calcium acetate soaks--highly effective; 2.5% calcium gluconate gel, 5.0% calcium gluconate injection and iced Hyamine soaks--effective; 10% calcium gluconate injection--ineffective. Histopathological data analysis showed the topical treatments (2.5% calcium gluconate gel, iced Hyamine, or iced Zephiran soaks) to be most effective in reducing superficial epidermal damage, and the 5% calcium gluconate injection or 10% calcium acetate soaks to be beneficial to deeper tissues of the dermis and subdermis. Injection of 10% calcium gluconate was ineffective. This study suggests that the anesthetized pig model has good applicability for assessing efficacy of HF dermal burn therapies. In addition, it indicates that further experimentation with 10% calcium acetate soaks is warranted.

  16. Hydrofluoric acid burn in a child from a compressed air duster.

    PubMed

    Moreno, Claudia; Beierle, Elizabeth A

    2007-01-01

    Abuse of fluorinated hydrocarbons is on the rise, especially among the adolescent population. These products are potentially hazardous and pose substantial risks when abused. The psychosocial aspects related to inhalant abuse, and the treatment of adolescents with inhalant injuries is unique. We retrospectively reviewed our experience with burns from these products. We present a case of a 12-year-old girl who suffered first- and second-degree burns to her face, neck, shoulder, and chest during an episode of recreational inhalant abuse with 1,1-difluoroethane from an aerosolized computer cleaner. This is one of the youngest cases reported in literature with such burns from questionable fluorinated hydrocarbon abuse. Because of the accessible nature of these compounds around homes, schools, and offices, it is critical for health care providers to have an awareness of the potential hazards and devastating consequences of their abuse. We propose an approach to the care of these patients that provides a focus on both prevention and attention to mental health.

  17. Semiconductor etching by hyperthermal neutral beams

    NASA Technical Reports Server (NTRS)

    Minton, Timothy K. (Inventor); Giapis, Konstantinos P. (Inventor)

    1999-01-01

    An at-least dual chamber apparatus and method in which high flux beams of fast moving neutral reactive species are created, collimated and used to etch semiconductor or metal materials from the surface of a workpiece. Beams including halogen atoms are preferably used to achieve anisotropic etching with good selectivity at satisfactory etch rates. Surface damage and undercutting are minimized.

  18. Methods for dry etching semiconductor devices

    DOEpatents

    Bauer, Todd; Gross, Andrew John; Clews, Peggy J.; Olsson, Roy H.

    2016-11-01

    The present invention provides methods for etching semiconductor devices, such aluminum nitride resonators. The methods herein allow for devices having improved etch profiles, such that nearly vertical sidewalls can be obtained. In some examples, the method employs a dry etch step with a primary etchant gas that omits BCl.sub.3, a common additive.

  19. Post-synthetic Anisotropic Wet-Chemical Etching of Colloidal Sodalite ZIF Crystals

    PubMed Central

    Avci, Civan; Ariñez-Soriano, Javier; Carné-Sánchez, Arnau; Guillerm, Vincent; Carbonell, Carlos; Imaz, Inhar; Maspoch, Daniel

    2016-01-01

    Controlling the shape of metal-organic framework (MOF) crystals is important for understanding their crystallization and useful for myriad applications. However, despite the many advances in shaping of inorganic nanoparticles, post-synthetic shape control of MOFs and, in general, molecular crystals remains embryonic. Herein we report using a simple wet-chemistry process at room temperature to control the anisotropic etching of colloidal ZIF-8 and ZIF-67 crystals. Our work enables uniform reshaping of these porous materials into unprecedented morphologies, including cubic and tetrahedral crystals, and even hollow boxes, via acid-base reaction and subsequent sequestration of leached metal ions. Etching tests on these ZIFs reveal that etching occurs preferentially in the crystallographic directions richer in metal-ligand bonds; that, among these directions, the etching rate tends to be faster on the crystal surfaces of higher dimensionality; and that the etching can be modulated by adjusting the pH of the etchant solution. PMID:26458081

  20. Note: Dissolved hydrogen detection in power transformer oil based on chemically etched fiber Bragg grating.

    PubMed

    Jiang, Jun; Ma, Guo-ming; Song, Hong-tu; Zhou, Hong-yang; Li, Cheng-rong; Luo, Ying-ting; Wang, Hong-bin

    2015-10-01

    A fiber Bragg grating (FBG) sensor based on chemically etched cladding to detect dissolved hydrogen is proposed and studied in this paper. Low hydrogen concentration tests have been carried out in mixed gases and transformer oil to investigate the repeatability and sensitivity. Moreover, to estimate the influence of etched cladding thickness, a physical model of FBG-based hydrogen sensor is analyzed. Experimental results prove that thin cladding chemically etched by HF acid solution improves the response to hydrogen detection in oil effectively. At last, the sensitivity of FBG sensor chemically etched 16 μm could be as high as 0.060 pm/(μl/l), increased by more than 30% in comparison to un-etched FBG.

  1. Post-Synthetic Anisotropic Wet-Chemical Etching of Colloidal Sodalite ZIF Crystals.

    PubMed

    Avci, Civan; Ariñez-Soriano, Javier; Carné-Sánchez, Arnau; Guillerm, Vincent; Carbonell, Carlos; Imaz, Inhar; Maspoch, Daniel

    2015-11-23

    Controlling the shape of metal-organic framework (MOF) crystals is important for understanding their crystallization and useful for myriad applications. However, despite the many advances in shaping of inorganic nanoparticles, post-synthetic shape control of MOFs and, in general, molecular crystals remains embryonic. Herein, we report using a simple wet-chemistry process at room temperature to control the anisotropic etching of colloidal ZIF-8 and ZIF-67 crystals. Our work enables uniform reshaping of these porous materials into unprecedented morphologies, including cubic and tetrahedral crystals, and even hollow boxes, by an acid-base reaction and subsequent sequestration of leached metal ions. Etching tests on these ZIFs reveal that etching occurs preferentially in the crystallographic directions richer in metal-ligand bonds; that, along these directions, the etching rate tends to be faster on the crystal surfaces of higher dimensionality; and that the etching can be modulated by adjusting the pH of the etchant solution.

  2. Ion-beam-assisted etching of diamond

    NASA Technical Reports Server (NTRS)

    Efremow, N. N.; Geis, M. W.; Flanders, D. C.; Lincoln, G. A.; Economou, N. P.

    1985-01-01

    The high thermal conductivity, low RF loss, and inertness of diamond make it useful in traveling wave tubes operating in excess of 500 GHz. Such use requires the controlled etching of type IIA diamond to produce grating like structures tens of micrometers deep. Previous work on reactive ion etching with O2 gave etching rates on the order of 20 nm/min and poor etch selectivity between the masking material (Ni or Cr) and the diamond. An alternative approach which uses a Xe(+) beam and a reactive gas flux of NO2 in an ion-beam-assisted etching system is reported. An etching rate of 200 nm/min was obtained with an etching rate ratio of 20 between the diamond and an aluminum mask.

  3. Selective Si Etching Using HCl Vapor

    NASA Astrophysics Data System (ADS)

    Isheden, C.; Hellström, P. E.; Radamson, H. H.; Zhang, S.-L.; Östling, M.

    2004-01-01

    Selective Si etching using HCl in a reduced pressure chemical vapor deposition reactor in the temperature range 800 1000°C is investigated. At 900°C, the etch process is anisotropic, exhibiting the densely packed (100), (311) and (111) surfaces. This behavior indicates that the etch process is limited by surface reaction, since the etch rate in the directions with higher atomic concentration is lower. When the temperature is decreased to 800°C, etch pits occur. A more isotropic etch is obtained at 1000°C, however at this temperature the masking oxide is attacked and the etch surface is rough. Thus the temperature has to be under the present process conditions, confined to a narrow window to yield desirable properties.

  4. Effects of etching and adhesive applications on the bond strength between composite resin and glass-ionomer cements

    PubMed Central

    PAMIR, Tijen; ŞEN, Bilge Hakan; EVCIN, Özgür

    2012-01-01

    Objective This study determined the effects of various surface treatment modalities on the bond strength of composite resins to glass-ionomer cements. Material and Methods Conventional (KetacTM Molar Quick ApplicapTM) or resin-modified (PhotacTM Fil Quick AplicapTM) glass-ionomer cements were prepared. Two-step etch-rinse & bond adhesive (AdperTM Single Bond 2) or single-step self-etching adhesive (AdperTM PromptTM L-PopTM) was applied to the set cements. In the etch-rinse & bond group, the sample surfaces were pre-treated as follows: (1) no etching, (2) 15 s of etching with 35% phosphoric acid, (3) 30 s of etching, and (4) 60 s of etching. Following the placement of the composite resin (FiltekTM Z250), the bond strength was measured in a universal testing machine and the data obtained were analyzed with the two-way analysis of variance (ANOVA) followed by the Tukey's HSD post hoc analysis (p=0.05). Then, the fractured surfaces were examined by scanning electron microscopy. Results The bond strength of the composite resin to the conventional glass-ionomer cement was significantly lower than that to the resin-modified glass-ionomer cement (p<0.001). No significant differences were determined between the self-etching and etch-rinse & bond adhesives at any etching time (p>0.05). However, a greater bond strength was obtained with 30 s of phosphoric acid application. Conclusions The resin-modified glass-ionomer cement improved the bond strength of the composite resin to the glass-ionomer cement. Both etch-rinse & bond and self-etching adhesives may be used effectively in the lamination of glass-ionomer cements. However, an etching time of at least 30 s appears to be optimal. PMID:23329245

  5. The effect of additional etching and curing mechanism of composite resin on the dentin bond strength

    PubMed Central

    Lee, In-Su; Son, Sung-Ae; Hur, Bock; Kwon, Yong-Hoon

    2013-01-01

    PURPOSE The aim of this study was to evaluate the effects of additional acid etching and curing mechanism (light-curing or self-curing) of a composite resin on the dentin bond strength and compatibility of one-step self-etching adhesives. MATERIALS AND METHODS Sixteen human permanent molars were randomly divided into eight groups according to the adhesives used (All-Bond Universal: ABU, Clearfil S3 Bond: CS3), additional acid etching (additional acid etching performed: EO, no additional acid etching performed: EX), and composite resins (Filtek Z-250: Z250, Clearfil FII New Bond: CFNB). Group 1: ABU-EO-Z250, Group 2: ABU-EO-CFNB, Group 3: ABU-EX-Z250, Group 4: ABU-EX-CFNB, Group 5: CS3-EO-Z250, Group 6: CS3-EO-CFNB, Group 7: CS3-EX-Z250, Group 8: CS3-EX-CFNB. After bonding procedures, composite resins were built up on dentin surfaces. After 24-hour water storage, the teeth were sectioned to make 10 specimens for each group. The microtensile bond strength test was performed using a microtensile testing machine. The failure mode of the fractured specimens was examined by means of an optical microscope at ×20 magnification. The data was analyzed using a one-way ANOVA and Scheffe's post-hoc test (α=.05). RESULTS Additional etching groups showed significantly higher values than the no additional etching group when using All-Bond Universal. The light-cured composite resin groups showed significantly higher values than the self-cured composite resin groups in the Clearfil S3 Bond. CONCLUSION The additional acid etching is beneficial for the dentin bond strength when using low acidic one-step self-etch adhesives, and low acidic one-step self-etch adhesives are compatible with self-cured composite resin. The acidity of the one-step self-etch adhesives is an influencing factor in terms of the dentin bonding strength and incompatibility with a self-cured composite resin. PMID:24353889

  6. Bond strength of resin-reinforced glass ionomer cements after enamel etching.

    PubMed

    Cortes, O; Garcia-Godoy, F; Boj, J R

    1993-12-01

    This study evaluated the shear bond strength of resin-reinforced glass ionomers to enamel etched or unetched. Human, non-carious extracted permanent molars stored in distilled water were used. Flat buccal and lingual enamel surfaces were ground wet on 600-grit silicon carbide paper. The teeth were then distributed at random into six groups of 5 teeth (10 surfaces) each: Group 1: Fuji II LC, no enamel etching; Group 2: Fuji II LC, enamel etched with 10% phosphoric acid for 10 seconds; Group 3: Dyract, no enamel etching; Group 4: Dyract, enamel etched with 10% phosphoric acid for 10 seconds; Group 5: Photac-Fil, no enamel etching; Group 6: Photac-Fil, enamel etched with 10% phosphoric acid for 10 seconds. Cylindrical samples of the glass ionomers were prepared in plastic molds and bonded to the enamel surface according to the manufacturers' instructions. All samples were placed in distilled water for 24 hours, and sheared with an Instron at a crosshead speed of 0.5 mm/minute. The results (in MPa) were: Group 1: 11.29 +/- 4.84; Group 2: 19.64 +/- 5.43; Group 3: 8.26 +/- 3.61; Group 4: 22.04 +/- 5.40; Group 5: 2.05 +/- 3.05; Group 6: 9.12 +/- 6.61. ANOVA and Student-Newman-Keuls procedure revealed that on etched enamel, Fuji II LC and Dyract had a significantly higher bond strength than all the other groups tested (P < 0.0001), but not significantly different between each other. With these two groups, cohesive failure within the material was recorded in all samples while in the unetched samples, all specimens displayed an adhesive failure (glass ionomer-enamel interface). All samples with Photac-Fil, with or without enamel etching had adhesive failures.

  7. In-Plasma Photo-Assisted Etching

    NASA Astrophysics Data System (ADS)

    Economou, Demetre

    2015-09-01

    A methodology to precisely control the ion energy distribution (IED) on a substrate allowed the study of silicon etching as a function of ion energy at near-threshold energies. Surprisingly, a substantial etching rate was observed, independent of ion energy, when the ion energy was below the ion-assisted etching threshold (~ 16 eV for etching silicon with chlorine plasma). Careful experiments led to the conclusion that this ``sub-threshold'' etching was due to photons, predominately at wavelengths <1700 Å. Among the plasmas investigated, photo-assisted etching (PAE) was lowest in Br2/Ar gas mixtures and highest in HBr/Cl2/Ar. Above threshold etching rates scaled with the square root of ion energy. PAE rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) and Ar emission intensity (7504 Å). Scanning electron and atomic force microscopy (SEM and AFM) revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. In-plasma PAE may be be a complicating factor for processes that require low ion energies, such as atomic layer etching. On the other hand PAE could produce sub-10 nm high aspect ratio (6:1) features by highly selective plasma etching to transfer nascent nanopatterns in silicon. Work supported by DOE Plasma Science Center and NSF.

  8. Surface modification via wet chemical etching of single-crystalline silicon for photovoltaic application.

    PubMed

    Reshak, A H; Shahimin, M M; Shaari, S; Johan, N

    2013-11-01

    The potential of solar cells have not been fully tapped due to the lack of energy conversion efficiency. There are three important mechanisms in producing high efficiency cells to harvest solar energy; reduction of light reflectance, enhancement of light trapping in the cell and increment of light absorption. The current work represent studies conducted in surface modification of single-crystalline silicon solar cells using wet chemical etching techniques. Two etching types are applied; alkaline etching (KOH:IPA:DI) and acidic etching (HF:HNO3:DI). The alkaline solution resulted in anisotropic profile that leads to the formation of inverted pyramids. While acidic solution formed circular craters along the front surface of silicon wafer. This surface modification will leads to the reduction of light reflectance via texturizing the surface and thereby increases the short circuit current and conversion rate of the solar cells.

  9. Method for etching thin films of niobium and niobium-containing compounds for preparing superconductive circuits

    DOEpatents

    Kampwirth, Robert T.; Schuller, Ivan K.; Falco, Charles M.

    1981-01-01

    An improved method of preparing thin film superconducting electrical circuits of niobium or niobium compounds in which a thin film of the niobium or niobium compound is applied to a nonconductive substrate, and covered with a layer of photosensitive material. The sensitive material is in turn covered with a circuit pattern exposed and developed to form a mask of the circuit in photoresistive material on the surface of the film. The unmasked excess niobium film is removed by contacting the substrate with an aqueous etching solution of nitric acid, sulfuric acid and hydrogen fluoride, which will rapidly etch the niobium compound without undercutting the photoresist. A modification of the etching solution will permit thin films to be lifted from the substrate without further etching.

  10. Method for etching thin films of niboium and niobium-containing compounds for preparing superconductive circuits

    DOEpatents

    Kampwirth, R.T.; Schuller, I.K.; Falco, C.M.

    1979-11-23

    An improved method of preparing thin film superconducting electrical circuits of niobium or niobium compounds is provided in which a thin film of the niobium or niobium compound is applied to a nonconductive substrate and covered with a layer of photosensitive material. The sensitive material is in turn covered with a circuit pattern exposed and developed to form a mask of the circuit in photoresistive material on the surface of the film. The unmasked excess niobium film is removed by contacting the substrate with an aqueous etching solution of nitric acid, sulfuric acid, and hydrogen fluoride, which will rapidly etch the niobium compound without undercutting the photoresist. A modification of the etching solution will permit thin films to be lifted from the substrate without further etching.

  11. Evaluation of over-etching technique in the endodontically treated tooth restoration

    PubMed Central

    Migliau, Guido; Piccoli, Luca; Besharat, Laith Konstantinos; Di Carlo, Stefano; Pompa, Giorgio

    2015-01-01

    Summary The main purpose of a post-endodontic restoration with posts is to guarantee the retention of the restorative material. The aim of the study was to examine, through the push-out test, how bond strength between the post and the dentin varied with etching time with 37% orthophosphoric acid, before cementation of a glass fiber post. Moreover, it has been examined if over-etching (application time of the acid: 2 minutes) was an effective technique to improve the adhesion to the endodontic substrate, after highlighting the problems of adhesion concerning its anatomical characteristics and the changes after the endodontic treatment. Highest bond strength values were found by etching the substrate for 30 sec., while over-etching didn’t improve bond strength to the endodontic substrate. PMID:26161247

  12. Etching of glass microchips with supercritical water.

    PubMed

    Karásek, Pavel; Grym, Jakub; Roth, Michal; Planeta, Josef; Foret, František

    2015-01-07

    A novel method of etching channels in glass microchips with the most tunable solvent, water, was tested as an alternative to common hydrogen fluoride-containing etchants. The etching properties of water strongly depend on temperature and pressure, especially in the vicinity of the water critical point. The chips were etched at the subcritical, supercritical and critical temperature of water, and the resulting channel shape, width, depth and surface morphology were studied by scanning electron microscopy and 3D laser profilometry. Channels etched with the hot water were compared with the chips etched with standard hydrogen fluoride-containing solution. Depending on the water pressure and temperature, the silicate dissolved from the glass could be re-deposited on the channel surface. This interesting phenomenon is described together with the conditions necessary for its utilization. The results illustrate the versatility of pure water as a glass etching and surface morphing agent.

  13. Etching method for photoresists or polymers

    NASA Technical Reports Server (NTRS)

    Lerner, Narcinda R. (Inventor); Wydeven, Theodore J., Jr. (Inventor)

    1991-01-01

    A method for etching or removing polymers, photoresists, and organic contaminants from a substrate is disclosed. The method includes creating a more reactive gas species by producing a plasma discharge in a reactive gas such as oxygen and contacting the resulting gas species with a sacrificial solid organic material such as polyethylene or polyvinyl fluoride, reproducing a highly reactive gas species, which in turn etches the starting polymer, organic contaminant, or photoresist. The sample to be etched is located away from the plasma glow discharge region so as to avoid damaging the substrate by exposure to high energy particles and electric fields encountered in that region. Greatly increased etching rates are obtained. This method is highly effective for etching polymers such as polyimides and photoresists that are otherwise difficult or slow to etch downstream from an electric discharge in a reactive gas.

  14. Laser-driven fusion etching process

    DOEpatents

    Ashby, Carol I. H.; Brannon, Paul J.; Gerardo, James B.

    1989-01-01

    The surfaces of solid ionic substrates are etched by a radiation-driven chemical reaction. The process involves exposing an ionic substrate coated with a layer of a reactant material on its surface to radiation, e.g. a laser, to induce localized melting of the substrate which results in the occurrance of a fusion reaction between the substrate and coating material. The resultant reaction product and excess reactant salt are then removed from the surface of the substrate with a solvent which is relatively inert towards the substrate. The laser-driven chemical etching process is especially suitable for etching ionic salt substrates, e.g., a solid inorganic salt such as LiNbO.sub.3, such as used in electro-optical/acousto-optic devices. It is also suitable for applications wherein the etching process is required to produce an etched ionic substrate having a smooth surface morphology or when a very rapid etching rate is desired.

  15. Laser-driven fusion etching process

    DOEpatents

    Ashby, C.I.H.; Brannon, P.J.; Gerardo, J.B.

    1987-08-25

    The surfaces of solids are etched by a radiation-driven chemical reaction. The process involves exposing a substrate coated with a layer of a reactant material on its surface to radiation, e.g., a laser, to induce localized melting of the substrate which results in the occurrence of a fusion reaction between the substrate and coating material. The resultant reaction product and excess reactant salt are then removed from the surface of the substrate with a solvent which is relatively inert towards the substrate. The laser-driven chemical etching process is especially suitable for etching ionic substrates, e.g., LiNbO/sub 3/, such as used in electro-optical/acousto-optic devices. It is also suitable for applications wherein the etching process is required to produce an etched ionic substrate having a smooth surface morphology or when a very rapid etching rate is desired.

  16. Etching radical controlled gas chopped deep reactive ion etching

    DOEpatents

    Olynick, Deidre; Rangelow, Ivo; Chao, Weilun

    2013-10-01

    A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH.sub.4 and controlling the passivation rate and stoichiometry using a CF.sub.2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

  17. Controlled ion implant damage profile for etching

    DOEpatents

    Arnold, Jr., George W.; Ashby, Carol I. H.; Brannon, Paul J.

    1990-01-01

    A process for etching a material such as LiNbO.sub.3 by implanting ions having a plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted area with an etchant. The various energies of the ions are selected to produce implant damage substantially uniformly throughout the entire depth of the zone to be etched, thus tailoring the vertical profile of the damaged zone.

  18. Selective etching of silicon carbide films

    DOEpatents

    Gao, Di; Howe, Roger T.; Maboudian, Roya

    2006-12-19

    A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

  19. Evaluation of shear bond strength of orthodontic brackets bonded with Er-YAG laser etching

    PubMed Central

    Raji, S. Hamid; Birang, Reza; Majdzade, Fateme; Ghorbanipour, Reza

    2012-01-01

    Background: Based on contradictory findings concerning the use of lasers for enamel etching, the purpose of this study was to investigate the shear bond strength of teeth prepared for bonding with Er-YAG laser etching and compare them with phosphoric acid etching. Materials and Methods: In this in vitro study forty – eight premolars, extracted for orthodontic purposes were randomly divided in to three groups. Thirty-two teeth were exposed to laser energy for 25 s: 16 teeth at 100 mj setting and 16 teeth at 150 mj setting. Sixteen teeth were etched with 37% phosphoric acid. The shear bond strength of bonded brackets with the Transbond XT adhesive system was measured with the Zwick testing machine. Descriptive statistics, Kolmogorov–Smirnov test, of homogeneity of variances, one- way analysis of variances and Tukey's test and Kruskal Wallis were used to analyze the data. Results: The mean shear bond strength of the teeth lased with 150 mj was 12.26 ± 4.76 MPa, which was not significantly different from the group with acid etching (15.26 ± 4.16 MPa). Irradiation with 100 mj resulted in mean bond strengths of 9.05 ± 3.16 MPa, which was significantly different from that of acid etching (P < 0.001). Conclusions: laser etching at 150 and 100 mj was adequate for bond strength but the failure pattern of brackets bonded with laser etching is dominantly at adhesive – enamel interface and is not safe for enamel during debonding. PMID:23087733

  20. Method for dry etching of transition metals

    DOEpatents

    Ashby, C.I.H.; Baca, A.G.; Esherick, P.; Parmeter, J.E.; Rieger, D.J.; Shul, R.J.

    1998-09-29

    A method for dry etching of transition metals is disclosed. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorus-containing {pi}-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/{pi}-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the {pi}-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the {pi}-acceptor ligand for forming the volatile transition metal/{pi}-acceptor ligand complex.

  1. Advanced plasma etch technologies for nanopatterning

    NASA Astrophysics Data System (ADS)

    Wise, Rich

    2012-03-01

    Advances in patterning techniques have enabled the extension of immersion lithography from 65/45nm through 14/10nm device technologies. A key to this increase in patterning capability has been innovation in the subsequent dry plasma etch processing steps. Multiple exposure techniques such as litho-etch-litho-etch, sidewall image transfer, line/cut mask and self-aligned structures have been implemented to solution required device scaling. Advances in dry plasma etch process control, across wafer uniformity and etch selectivity to both masking materials and have enabled adoption of vertical devices and thin film scaling for increased device performance at a given pitch. Plasma etch processes such as trilayer etches, aggressive CD shrink techniques, and the extension of resist trim processes have increased the attainable device dimensions at a given imaging capability. Precise control of the plasma etch parameters affecting across design variation, defectivity, profile stability within wafer, within lot, and across tools have been successfully implemented to provide manufacturable patterning technology solutions. IBM has addressed these patterning challenges through an integrated Total Patterning Solutions team to provide seamless and synergistic patterning processes to device and integration internal customers. This paper will discuss these challenges and the innovative plasma etch solutions pioneered by IBM and our alliance partners.

  2. Advanced plasma etch technologies for nanopatterning

    NASA Astrophysics Data System (ADS)

    Wise, Rich

    2013-10-01

    Advances in patterning techniques have enabled the extension of immersion lithography from 65/45 nm through 14/10 nm device technologies. A key to this increase in patterning capability has been innovation in the subsequent dry plasma etch processing steps. Multiple exposure techniques, such as litho-etch-litho-etch, sidewall image transfer, line/cut mask, and self-aligned structures, have been implemented to solution required device scaling. Advances in dry plasma etch process control across wafer uniformity and etch selectivity to both masking materials have enabled adoption of vertical devices and thin film scaling for increased device performance at a given pitch. Plasma etch processes, such as trilayer etches, aggressive critical dimension shrink techniques, and the extension of resist trim processes, have increased the attainable device dimensions at a given imaging capability. Precise control of the plasma etch parameters affecting across-design variation, defectivity, profile stability within wafer, within lot, and across tools has been successfully implemented to provide manufacturable patterning technology solutions. IBM has addressed these patterning challenges through an integrated total patterning solutions team to provide seamless and synergistic patterning processes to device and integration internal customers. We will discuss these challenges and the innovative plasma etch solutions pioneered by IBM and our alliance partners.

  3. Dry etching technologies for reflective multilayer

    NASA Astrophysics Data System (ADS)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

    2012-11-01

    We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

  4. Method for dry etching of transition metals

    DOEpatents

    Ashby, Carol I. H.; Baca, Albert G.; Esherick, Peter; Parmeter, John E.; Rieger, Dennis J.; Shul, Randy J.

    1998-01-01

    A method for dry etching of transition metals. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorous-containing .pi.-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/.pi.-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the .pi.-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the .pi.-acceptor ligand for forming the volatile transition metal/.pi.-acceptor ligand complex.

  5. One-Year Clinical Evaluation of the Bonding Effectiveness of a One-Step, Self-Etch Adhesive in Noncarious Cervical Lesion Therapy

    PubMed Central

    Faye, Babacar; Sarr, Mouhamed; Bane, Khaly; Aidara, Adjaratou Wakha; Niang, Seydina Ousmane; Kane, Abdoul Wakhabe

    2015-01-01

    This study evaluated the one-year clinical performance of a one-step, self-etch adhesive (Optibond All-in-One, Kerr, CA, USA) combined with a composite (Herculite XRV Ultra, Kerr Hawe, CA, USA) to restore NCCLs with or without prior acid etching. Restorations performed by the same practitioner were evaluated at baseline and after 3, 6, and 12 months using modified USPHS criteria. At 6 months, the recall rate was 100%. The retention rate was 84.2% for restorations with prior acid etching, but statistically significant differences were observed between baseline and 6 months. Without acid etching, the retention rate was 77%, and no statistically significant difference was noted between 3 and 6 months. Marginal integrity (93.7% with and 87.7% without acid etching) and discoloration (95.3% with and 92.9% without acid etching) were scored as Alpha or Bravo, with better results after acid etching. After one year, the recall rate was 58.06%. Loss of pulp vitality, postoperative sensitivity, or secondary caries were not observed. After one year retention rate was of 90.6% and 76.9% with and without acid conditioning. Optibond All-in-One performs at a satisfactory clinical performance level for restoration of NCCLs after 12 months especially after acid etching. PMID:25810720

  6. Control over the permeation of silica nanoshells by surface-protected etching with water.

    PubMed

    Hu, Yongxing; Zhang, Qiao; Goebl, James; Zhang, Tierui; Yin, Yadong

    2010-10-14

    We demonstrate a water-based etching strategy for converting solid silica shells into porous ones with controllable permeability. It overcomes the challenges of the alkaline-based surface-protected etching process that we previously developed for the production of porous and hollow silica nanostructures. Mild etching around the boiling point of water partially breaks the imperfectly condensed silica network and forms soluble monosilicic acid, eventually producing mesoscale pores in the silica structures. With the surface protection from poly(vinyl pyrrolidone) (PVP), it is possible to maintain the overall shape of the silica structures while at the same time to create porosity inside. By using bulky PVP molecules which only protect the near-surface region, we are able to completely remove the interior silica and produce hollow particles. Because the etching is mild and controllable, this process is particularly useful for treating small silica particles or core-shell particles with very thin silica shells for which the alkaline-based etching method has been difficult to control. We demonstrated the precise control of the permeation of the chemical species through the porous silica shells by using a model reaction which involves the etching of Ag encapsulated inside Ag@SiO(2) by a halocarbon. It is expected that the water-based surface-protected etching method can be conveniently extended to the production of various porous silica shells containing functional materials whose diffusion to outside and/or reaction with outside species can be easily controlled.

  7. Influence of laser etching on enamel and dentin bond strength of Silorane System Adhesive.

    PubMed

    Ustunkol, Ildem; Yazici, A Ruya; Gorucu, Jale; Dayangac, Berrin

    2015-02-01

    The aim of this in vitro study was to evaluate the shear bond strength (SBS) of Silorane System Adhesive to enamel and dentin surfaces that had been etched with different procedures. Ninety freshly extracted human third molars were used for the study. After the teeth were embedded with buccal surfaces facing up, they were randomly divided into two groups. In group I, specimens were polished with a 600-grit silicon carbide (SiC) paper to obtain flat exposed enamel. In group II, the overlying enamel layer was removed and exposed dentin surfaces were polished with a 600-grit SiC paper. Then, the teeth in each group were randomly divided into three subgroups according to etching procedures: etched with erbium, chromium:yttrium-scandium-gallium-garnet laser (a), etched with 35% phosphoric acid (b), and non-etched (c, control). Silorane System Adhesive was used to bond silorane restorative to both enamel and dentin. After 24-h storage in distilled water at room temperature, a SBS test was performed using a universal testing machine at a crosshead speed of 1 mm/min. The data were analyzed using two-way ANOVA and Bonferroni tests (p < 0.05). The highest SBS was found after additional phosphoric acid treatment in dentin groups (p < 0.05). There were no statistically significant differences between the laser-etched and non-etched groups in enamel and dentin (p > 0.05). The SBS of self-etch adhesive to dentin was not statistically different from enamel (p > 0.05). Phosphoric acid treatment seems the most promising surface treatment for increasing the enamel and dentin bond strength of Silorane System Adhesive.

  8. SAXS study on the morphology of etched and un-etched ion tracks in apatite

    NASA Astrophysics Data System (ADS)

    Nadzri, A.; Schauries, D.; Afra, B.; Rodriguez, M. D.; Mota-Santiago, P.; Muradoglu, S.; Hawley, A.; Kluth, P.

    2015-04-01

    Natural apatite samples were irradiated with 185 MeV Au and 2.3 GeV Bi ions to simulate fission tracks. The resulting track morphology was investigated using synchrotron small angle x-ray scattering (SAXS) measurements before and after chemical etching. We present preliminary results from the SAXS measurement showing the etching process is highly anisotropic yielding faceted etch pits with a 6-fold symmetry. The measurements are a first step in gaining new insights into the correlation between etched and unetched fission tracks and the use of SAXS as a tool for studying etched tracks.

  9. Simulation of Etching Profiles Using Level Sets

    NASA Technical Reports Server (NTRS)

    Hwang, Helen; Govindan, T. R.; Meyyappan, M.; Arnold, James O. (Technical Monitor)

    1998-01-01

    Using plasma discharges to etch trenches and via holes in substrates is an important process in semiconductor manufacturing. Ion enhanced etching involves both neutral fluxes, which are isotropic, and ion fluxes, which are anisotropic. The angular distributions for the ions determines the degree of vertical etch, while the amount of the neutral fluxes determines the etch rate. We have developed a 2D profile evolution simulation which uses level set methods to model the plasma-substrate interface. Using level sets instead of traditional string models avoids the use of complicated delooping algorithms. The simulation calculates the etch rate based on the fluxes and distribution functions of both ions and neutrals. We will present etching profiles of Si substrates in low pressure (10s mTorr) Ar/Cl2 discharges for a variety of incident ion angular distributions. Both ion and neutral re-emission fluxes are included in the calculation of the etch rate, and their contributions to the total etch profile will be demonstrated. In addition, we will show RIE lag effects as a function of different trench aspect ratios. (For sample profiles, please see http://www.ipt.arc.nasa.gov/hwangfig1.html)

  10. Gallium nitride nanowires by maskless hot phosphoric wet etching

    NASA Astrophysics Data System (ADS)

    Bharrat, D.; Hosalli, A. M.; Van Den Broeck, D. M.; Samberg, J. P.; Bedair, S. M.; El-Masry, N. A.

    2013-08-01

    We demonstrate gallium nitride (GaN) nanowires formation by controlling the selective and anisotropic etching of N-polar GaN in hot phosphoric acid. Nanowires of ˜109/cm,2 total height of ˜400 nm, and diameters of 170-200 nm were obtained. These nanowires have both non-polar {11¯00}/ {112¯0} and semi-polar {1011¯} facets. X-Ray Diffraction characterization shows that screw dislocations are primarily responsible for preferential etching to create nanowires. Indium gallium nitride multi-quantum wells (MQWs) grown on these GaN nanowires showed a blue shift in peak emission wavelength of photoluminescence spectra, and full width at half maximum decreased relative to MQWs grown on planar N-polar GaN, respectively.

  11. Etch selectivity of a wet chemical formulation for premetal cleaning

    NASA Astrophysics Data System (ADS)

    Epton, Jeremy W.; Jarrett, Deborah L.; Doohan, Ian J.

    2001-04-01

    This paper examines the relative etching rates of doped and thermal silicon dioxide when using NSSL etchant, comprising of a mixture of ammonium fluoride, water and ammonium dihydrogen phosphate [(NH4)H2PO4] and investigates their dependence on both temperature and mixture composition. The possible reaction mechanism is discussed and compared with the known mechanism for standard buffered oxide etchants (BOE). The observed etch selectivity and mechanisms of BOE and NSSL are also compared with the behavior of a third chemical formulation, referred to as mixed oxide etchant, which comprises of ammonium fluoride (NH4F) solution, diammonium hydrogen phosphate [(NH4)2HPO4] and orthophosphoric acid (H3PO4). It is concluded that no major change in oxide selectivity is observed if either BOE or NSSL etchants are used in the metal pre-clean process.

  12. Mechanisms of Hydrocarbon Based Polymer Etch

    NASA Astrophysics Data System (ADS)

    Lane, Barton; Ventzek, Peter; Matsukuma, Masaaki; Suzuki, Ayuta; Koshiishi, Akira

    2015-09-01

    Dry etch of hydrocarbon based polymers is important for semiconductor device manufacturing. The etch mechanisms for oxygen rich plasma etch of hydrocarbon based polymers has been studied but the mechanism for lean chemistries has received little attention. We report on an experimental and analytic study of the mechanism for etching of a hydrocarbon based polymer using an Ar/O2 chemistry in a single frequency 13.56 MHz test bed. The experimental study employs an analysis of transients from sequential oxidation and Ar sputtering steps using OES and surface analytics to constrain conceptual models for the etch mechanism. The conceptual model is consistent with observations from MD studies and surface analysis performed by Vegh et al. and Oehrlein et al. and other similar studies. Parameters of the model are fit using published data and the experimentally observed time scales.

  13. Optical fiber nanoprobe preparation for near-field optical microscopy by chemical etching under surface tension and capillary action.

    PubMed

    Mondal, Samir K; Mitra, Anupam; Singh, Nahar; Sarkar, S N; Kapur, Pawan

    2009-10-26

    We propose a technique of chemical etching for fabrication of near perfect optical fiber nanoprobe (NNP). It uses photosensitive single mode optical fiber to etch in hydro fluoric (HF) acid solution. The difference in etching rate for cladding and photosensitive core in HF acid solution creates capillary ring along core-cladding boundary under a given condition. The capillary ring is filled with acid solution due to surface tension and capillary action. Finally it creates near perfect symmetric tip at the apex of the fiber as the height of the acid level in capillary ring decreases while width of the ring increases with continuous etching. Typical tip features are short taper length (approximately 4 microm), large cone angle (approximately 38 degrees ), and small probe tip dimension (<100 nm). A finite difference time domain (FDTD) analysis is also presented to compare near field optics of the NNP with conventional nanoprobe (CNP). The probe may be ideal for near field optical imaging and sensor applications.

  14. Selective enamel etching: effect on marginal adaptation of self-etch LED-cured bond systems in aged Class I composite restorations.

    PubMed

    Souza-Junior, E J; Prieto, L T; Araújo, C T P; Paulillo, L A M S

    2012-01-01

    The aim of this study was to evaluate the influence of previous enamel etch and light emitting diode (LED) curing on gap formation of self-etch adhesive systems in Class I composite restorations after thermomechanical aging (TMA). Thus, on 192 human molars, a box-shaped Class I cavity was prepared maintaining enamel margins. Self-etch adhesives (Clearfil SE and Clearfil S3) were used to restore the preparation with a microhybrid composite. Before application of the adhesives, half of the teeth were enamel etched for 15 seconds with 37% phosphoric acid; the other half were not etched. For the photoactivation of the adhesives and composite, three light-curing units (LCUs) were used: one polywave (Ultra-Lume LED 5, UL) and two single-peak (FlashLite 1401, FL and Radii-cal, RD) LEDs. After this, epoxy resin replicas of the occlusal surface were made, and the specimens were submitted to TMA. New replicas were made from the aged specimens for marginal adaptation analysis by scanning electron microscopy. Data were submitted to Kruskal-Wallis and Wilcoxon tests (α=0.05). Before TMA, when enamel was etched before the application of S3, no gap formation was observed; however, there were gaps at the interface for the other tested conditions, with a statistical difference (p≤0.05). After TMA, the selective enamel etching previous to the S3 application, regardless of the LCU, promoted higher marginal adaptation compared to the other tested groups (p≤0.05). Prior to TMA, higher marginal integrity was observed, in comparison with specimens after TMA (p≤0.05). With regard to Clearfil SE and Clearfil Tri-S cured with FL, no differences of gap formation were found between before and after aging (5.3 ± 3.8 and 7.4 ± 7.5, respectively), especially when the Clearfil Tri-S was used in the conventional protocol. When cured with RD or UL and not etched, Clearfil Tri-S presented the higher gap formation. In conclusion, additional enamel etching promoted better marginal integrity

  15. Etch-a-Sketch Nanoelectronics

    NASA Astrophysics Data System (ADS)

    Levy, Jeremy

    2009-10-01

    The popular children's toy Etch-a-Sketch has motivated the invention of a new material capable of writing and erasing wires so small they approach the spacing between atoms. The interface between two normally insulating materials, strontium titanate and lanthanum aluminate, can be switched between the insulating and conducting state with the use of the sharp metallic probe of an atomic-force microscope. By ``sketching'' this probe in various patterns, one can create electronic materials with remarkably diverse properties. This material system shows promise both for ultra-high density storage and as possible replacements for silicon-based logic (CMOS). This work is supported by the National Science Foundation, Defense Advanced Research Projects Agency, Army Research Office and Air Force Office of Scientific Research.

  16. Nanoscale etching and flattening of metals with ozone water.

    PubMed

    Hatsuki, Ryuji; Yamamoto, Takatoki

    2012-06-13

    Etchants used for metal etching are generally harmful to the environment. We propose an environmentally friendly method that uses ozone water to etch metals. We measured the dependencies of ozone water etching on the temperature and ozone concentration for several metals and evaluated the surface roughness of the etched surfaces. The etching rate was proportional to the dissolved ozone concentration, and the temperature and the surfaces were smoothed by etching.

  17. Surface passivation of silicon nanowires based metal nano-particle assisted chemical etching for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Ben Rabha, Mohamed; Khezami, Lotfi; Jemai, Abdelbasset Bessadok; Alhathlool, Raed; Ajbar, Abdelhamid

    2017-03-01

    Metal Nano-particle Assisted Chemical Etching (MNpACE) is an extraordinary developed wet etching method for producing uniform semiconductor nanostructure (silicon nanowires) from patterned metallic film on crystalline silicon surface. The metal films facilitate the etching in HF and H2O2 solution and produce silicon nanowires (SiNWs).The creation of different SiNWs morphologies by changing the etching time and its effects on optical and optoelectronic properties was investigated. The combination effect of formed SiNWs and stain etching treatment in acid (HF/HNO3/H2O) solution on the surface morphology of Si wafers as well as on the optical and optoelectronic properties especially a PL response at 640 nm are presented. As a results, the effective lifetime (τeff) and surface recombination velocity (Seff) evolution of SiNWs after stain etching treatment showed significant improvements and less than 1% reflectance was achieved over the wavelength range of 400-800 nm and more than 36% reduction was observed compared to untreated surface. It has, thus, been demonstrated that all these factors may lead to improved energy efficiency from 8% to nearly 14.2% for a cell with SiNWs treated in acid (HF/HNO3/H2O) solution.

  18. Wet etching of InSb surfaces in aqueous solutions: Controlled oxide formation

    NASA Astrophysics Data System (ADS)

    Aureau, D.; Chaghi, R.; Gerard, I.; Sik, H.; Fleury, J.; Etcheberry, A.

    2013-07-01

    This paper investigates the wet etching of InSb surfaces by two different oxidant agents: Br2 and H2O2 and the consecutive oxides generation onto the surfaces. The strong dependence between the chemical composition of the etching baths and the nature of the final surface chemistry of this low band-gap III-V semiconductor will be especially highlighted. One aqueous etching solution combined hydrobromic acid and Bromine (HBr-Br2:H2O) with adjusted concentrations. The other solution combines orthophosphoric and citric acids with hydrogen peroxide (H3PO4-H2O2:H2O). Depending on its composition, each formulation gave rise to variable etching rate. The dosage of Indium traces in the etching solution by atomic absorption spectroscopy (AAS) gives the kinetic variation of the dissolution process. The variations on etching rates are associated to the properties and the nature of the formed oxides on InSb surfaces. Surface characterization is specifically performed by X-ray photoelectron spectroscopy (XPS). A clear evidence of the differences between the formed oxides is highlighted. Atomic force microscopy is used to monitor the surface morphology and pointed out that very different final morphologies can be reached. This paper presents new results on the strong variability of the InSb oxides in relation with the InSb reactivity toward environment interaction.

  19. Effect of wet etching process on the morphology and transmittance of fluorine doped tin oxide (FTO)

    NASA Astrophysics Data System (ADS)

    Triana, S. L.; Kusumandari; Suryana, R.

    2016-11-01

    Wet etching process was performed on the surface of FTO. The FTO coated glasses subtrates with size of 2×2 cm covered by screen were patterned using zinc powder and concentrated hydrochloric acid (1 M). The substrates were then cleaned in ultrasonic baths of special detergent(helmanex) diluted in deionized water and isopropanol in sequence. The screens with various of hole size denotes by T32, T49 and T55 were used in order to create a pattern of surface textured. The atomic force microscopy (AFM) image revealed that wet etching process changes the morphology of FTO. It indicates that texturization occured. Moreover, from the UV-Vis Spectrophotometer measurement, the transmittance of FTO increase after wet etching process. The time of etching and pattern of screen were affect to the morphology and the transmittance of FTO.

  20. Silver ion mediated shape control of platinum nanoparticles: Removal of silver by selective etching leads to increased catalytic activity

    SciTech Connect

    Grass, Michael E.; Yue, Yao; Habas, Susan E.; Rioux, Robert M.; Teall, Chelsea I.; Somorjai, G.A.

    2008-01-09

    A procedure has been developed for the selective etching of Ag from Pt nanoparticles of well-defined shape, resulting in the formation of elementally-pure Pt cubes, cuboctahedra, or octahedra, with a largest vertex-to-vertex distance of {approx}9.5 nm from Ag-modified Pt nanoparticles. A nitric acid etching process was applied Pt nanoparticles supported on mesoporous silica, as well as nanoparticles dispersed in aqueous solution. The characterization of the silica-supported particles by XRD, TEM, and N{sub 2} adsorption measurements demonstrated that the structure of the nanoparticles and the mesoporous support remained conserved during etching in concentrated nitric acid. Both elemental analysis and ethylene hydrogenation indicated etching of Ag is only effective when [HNO{sub 3}] {ge} 7 M; below this concentration, the removal of Ag is only {approx}10%. Ethylene hydrogenation activity increased by four orders of magnitude after the etching of Pt octahedra that contained the highest fraction of silver. High-resolution transmission electron microscopy of the unsupported particles after etching demonstrated that etching does not alter the surface structure of the Pt nanoparticles. High [HNO{sub 3}] led to the decomposition of the capping agent, polyvinylpyrollidone (PVP); infrared spectroscopy confirmed that many decomposition products were present on the surface during etching, including carbon monoxide.

  1. High density plasma etching of magnetic devices

    NASA Astrophysics Data System (ADS)

    Jung, Kee Bum

    Magnetic materials such as NiFe (permalloy) or NiFeCo are widely used in the data storage industry. Techniques for submicron patterning are required to develop next generation magnetic devices. The relative chemical inertness of most magnetic materials means they are hard to etch using conventional RIE (Reactive Ion Etching). Therefore ion milling has generally been used across the industry, but this has limitations for magnetic structures with submicron dimensions. In this dissertation, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma) for the etching of magnetic materials (NiFe, NiFeCo, CoFeB, CoSm, CoZr) and other related materials (TaN, CrSi, FeMn), which are employed for magnetic devices like magnetoresistive random access memories (MRAM), magnetic read/write heads, magnetic sensors and microactuators. This research examined the fundamental etch mechanisms occurring in high density plasma processing of magnetic materials by measuring etch rate, surface morphology and surface stoichiometry. However, one concern with using Cl2-based plasma chemistry is the effect of residual chlorine or chlorinated etch residues remaining on the sidewalls of etched features, leading to a degradation of the magnetic properties. To avoid this problem, we employed two different processing methods. The first one is applying several different cleaning procedures, including de-ionized water rinsing or in-situ exposure to H2, O2 or SF6 plasmas. Very stable magnetic properties were achieved over a period of ˜6 months except O2 plasma treated structures, with no evidence of corrosion, provided chlorinated etch residues were removed by post-etch cleaning. The second method is using non-corrosive gas chemistries such as CO/NH3 or CO2/NH3. There is a small chemical contribution to the etch mechanism (i.e. formation of metal carbonyls) as determined by a comparison with Ar and N2 physical sputtering. The discharge should be NH3

  2. Galvanic etch stop for Si in KOH

    NASA Astrophysics Data System (ADS)

    Connolly, E. J.; French, P. J.; Xia, X. H.; Kelly, J. J.

    2004-08-01

    Etch stops and etch-stopping techniques are essential 'tools' for 2D and 3D MEMS devices. Until now, use of a galvanic etch stop (ES) for micromachining in alkaline solutions was usually prohibited due to the large Au:Si area needed and/or high oxygen content required to achieve the ES. We report a new galvanic ES which requires a Au:exposed silicon area ratio of only ~1. Thus for the first time a practical galvanic ES for KOH has been achieved. The ES works by adding small amounts of sodium hypochlorite, NaOCl, to KOH solutions. Essentially the NaOCl increases the oxygen content in the KOH etchant. The dependancy of the galvanic ES on KOH concentration and temperature is investigated. Also, we report on the effects of the added NaOCl on etch rates. SEM images are used to examine the galvanically etch-stopped membranes and their surface morphology. For 33% KOH solutions the galvanic etch stop worked well, producing membranes with uniform thickness ~6 µm (i.e. slightly greater than the deposited epilayer). For 20% KOH solutions, the galvanic etch stop still worked, but the resulting membranes were a little thicker (~10 µm).

  3. Fe-catalyzed etching of graphene layers

    NASA Astrophysics Data System (ADS)

    Cheng, Guangjun; Calizo, Irene; Hight Walker, Angela; PML, NIST Team

    We investigate the Fe-catalyzed etching of graphene layers in forming gas. Fe thin films are deposited by sputtering onto mechanically exfoliated graphene, few-layer graphene (FLG), and graphite flakes on a Si/SiO2 substrate. When the sample is rapidly annealed in forming gas, particles are produced due to the dewetting of the Fe thin film and those particles catalyze the etching of graphene layers. Monolayer graphene and FLG regions are severely damaged and that the particles catalytically etch channels in graphite. No etching is observed on graphite for the Fe thin film annealed in nitrogen. The critical role of hydrogen indicates that this graphite etching process is catalyzed by Fe particles through the carbon hydrogenation reaction. By comparing with the etched monolayer and FLG observed for the Fe film annealed in nitrogen, our Raman spectroscopy measurements identify that, in forming gas, the catalytic etching of monolayer and FLG is through carbon hydrogenation. During this process, Fe particles are catalytically active in the dissociation of hydrogen into hydrogen atoms and in the production of hydrogenated amorphous carbon through hydrogen spillover.

  4. Etch Characteristics of GaN using Inductively Coupled Cl2 Plasma Etching

    NASA Astrophysics Data System (ADS)

    Rosli, Siti Azlina; Aziz, A. Abdul

    2008-05-01

    In this study, the plasma characteristics and GaN etch properties of inductively coupled Cl2/Ar plasmas were investigated. It has shown that the results of a study of inductively coupled plasma (ICP) etching of gallium nitride by using Cl2/Ar is possible to meet the requirement (anisotropy, high etch rate and high selectivity), simultaneously. We have investigated the etching rate dependency on the percentage of Argon in the gas mixture, the total pressure and DC voltage. We found that using a gas mixture with 20 sccm of Ar, the optimum etch rate of GaN was achieved. The etch rate were found to increase with voltage, attaining a maximum rate 2500 Å/min at -557 V. The addition of an inert gas, Ar is found to barely affect the etch rate. Surface morphology of the etched samples was verified by scanning electron microscopy and atomic force microscopy. It was found that the etched surface was anisotropic and the smoothness of the etched surface is comparable to that of polished wafer.

  5. Dry etching method for compound semiconductors

    DOEpatents

    Shul, R.J.; Constantine, C.

    1997-04-29

    A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

  6. Dry etching method for compound semiconductors

    SciTech Connect

    Shul, Randy J.; Constantine, Christopher

    1997-01-01

    A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

  7. Method of sputter etching a surface

    DOEpatents

    Henager, Jr., Charles H.

    1984-01-01

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion.

  8. Method of sputter etching a surface

    DOEpatents

    Henager, C.H. Jr.

    1984-02-14

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion. 4 figs.

  9. Electroless epitaxial etching for semiconductor applications

    DOEpatents

    McCarthy, Anthony M.

    2002-01-01

    A method for fabricating thin-film single-crystal silicon on insulator substrates using electroless etching for achieving efficient etch stopping on epitaxial silicon substrates. Microelectric circuits and devices are prepared on epitaxial silicon wafers in a standard fabrication facility. The wafers are bonded to a holding substrate. The silicon bulk is removed using electroless etching leaving the circuit contained within the epitaxial layer remaining on the holding substrate. A photolithographic operation is then performed to define streets and wire bond pad areas for electrical access to the circuit.

  10. Recovering obliterated engraved marks on aluminium surfaces by etching technique.

    PubMed

    Baharum, Mohd Izhar Mohd; Kuppuswamy, R; Rahman, Azari Abd

    2008-05-20

    A study has been made of the characteristics of restoration of obliterated engraved marks on aluminium surfaces by etching technique. By etching different reagents on 0.61mm thick sheets of aluminium (99wt%) on which some engraved marks had been erased to different depths it was found that the reagent 60% hydrochloric acid and 40% sodium hydroxide on alternate swabbing on the surfaces was found to be the most sensitive one for these metal surfaces. This reagent was able to restore marks in the above plates erased down to 0.04mm below the bottom of the engraving. The marks also presented excellent contrast with the background. This reagent was further experimented with similar aluminium surfaces, but of relatively greater thickness of 1.5mm. It was noticed that the recovery depth increased slightly to 0.06mm; this suggested the dependence of recovery depth on the thickness of the sheet metal. Further, the depth of restoration decreased in cases where the original number was erased and over which a new number was engraved; the latter results are similar to those of steel surfaces reported earlier [M.A.M. Zaili, R. Kuppuswamy, H. Harun, Restoration of engraved marks on steel surfaces by etching technique, Forensic Sci. Int. 171 (2007) 27-32].

  11. Etch proximity correction through machine-learning-driven etch bias model

    NASA Astrophysics Data System (ADS)

    Shim, Seongbo; Shin, Youngsoo

    2016-03-01

    Accurate prediction of etch bias has become more important as technology node shrinks. A simulation is not feasible solution in full chip level due to excessive runtime, so etch proximity correction (EPC) often relies on empirically obtained rules or models. However, simple rules alone cannot accurately correct various pattern shapes, and a few empirical parameters in model-based EPC is still not enough to achieve satisfactory OCV. We propose a new approach of etch bias modeling through machine learning (ML) technique. A segment of interest (and its surroundings) are characterized by some geometric and optical parameters, which are received by an artificial neural network (ANN), which then outputs predicted etch bias of the segment. The ANN is used as our etch bias model for new EPC, which we propose in this paper. The new etch bias model and EPC are implemented in commercial OPC tool and demonstrated using 20nm technology DRAM gate layer.

  12. Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching

    DOEpatents

    Ashby, Carol I. H.; Myers, David R.

    1992-01-01

    The minority carrier lifetime is significantly much shorter in semiconductor materials with very high impurity concentrations than it is in semiconductor materials with lower impurity concentration levels. This phenomenon of reduced minority carrier lifetime in semiconductor materials having high impurity concentration is utilized to advantage for permitting highly selective semiconductor material etching to be achieved using a carrier-driven photochemical etching reaction. Various means may be employed for increasing the local impurity concentration level in specific near-surface regions of a semiconductor prior to subjecting the semiconductor material to a carrier-driven photochemical etching reaction. The regions having the localized increased impurity concentration form a self-aligned mask inhibiting photochemical etching at such localized regions while the adjacent regions not having increased impurity concentrations are selectively photochemically etched. Liquid- or gas-phase etching may be performed.

  13. Freeze fracture and freeze etching.

    PubMed

    Chandler, Douglas E; Sharp, William P

    2014-01-01

    Freeze fracture depends on the property of frozen tissues or cells, when cracked open, to split along the hydrophobic interior of membranes, thus revealing broad panoramas of membrane interior. These large panoramas reveal the three-dimensional contours of membranes making the methods well suited to studying changes in membrane architecture. Freshly split membrane faces are visualized by platinum or tungsten shadowing and carbon backing to form a replica that is then cleaned of tissue and imaged by TEM. Etching, i.e., removal of ice from the frozen fractured specimen by sublimation prior to shadowing, can also reveal the true surfaces of the membrane as well as the extracellular matrix and cytoskeletal networks that contact the membranes. Since the resolution of detail in the metal replicas formed is 1-2 nm, these methods can also be used to visualize macromolecules or macromolecular assemblies either in situ or displayed on a mica surface. These methods are available for either specimens that have been chemically fixed or specimens that have been rapidly frozen without chemical intervention.

  14. Metal assisted anodic etching of silicon

    NASA Astrophysics Data System (ADS)

    Lai, Chang Quan; Zheng, Wen; Choi, W. K.; Thompson, Carl V.

    2015-06-01

    Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P+-type and N+-type Si wafers and a wide range of nanostructure morphologies were observed, including solid Si nanowires, porous Si nanowires, a porous Si layer without Si nanowires, and porous Si nanowires on a thick porous Si layer. Formation of wires was the result of selective etching at the Au-Si interface. It was found that when the anodic contact was made through P-type or P+-type Si, regular anodic etching due to electronic hole injection leads to formation of porous silicon simultaneously with metal assisted anodic etching. When the anodic contact was made through N-type or N+-type Si, generation of electronic holes through processes such as impact ionization and tunnelling-assisted surface generation were required for etching. In addition, it was found that metal assisted anodic etching of Si with the anodic contact made through the patterned Au film essentially reproduces the phenomenology of metal assisted chemical etching (MACE), in which holes are generated through metal assisted reduction of H2O2 rather than current flow. These results clarify the linked roles of electrical and chemical processes that occur during electrochemical etching of Si.Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P+-type and N+-type Si wafers and a wide range of nanostructure morphologies were observed

  15. Black Germanium fabricated by reactive ion etching

    NASA Astrophysics Data System (ADS)

    Steglich, Martin; Käsebier, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

    2016-09-01

    A reactive ion etching technique for the preparation of statistical "Black Germanium" antireflection surfaces, relying on self-organization in a Cl2 etch chemistry, is presented. The morphology of the fabricated Black Germanium surfaces is the result of a random lateral distribution of pyramidal etch pits with heights around (1450 ± 150) nm and sidewall angles between 80° and 85°. The pyramids' base edges are oriented along the <110> crystal directions of Germanium, indicating a crystal anisotropy of the etching process. In the Vis-NIR, the tapered Black Germanium surface structure suppresses interface reflection to <2.5 % for normal incidence and still to <6 % at an angle of incidence of 70°. The presented Black Germanium might find applications as low-cost AR structure in optoelectronics and IR optics.

  16. Epoxy bond and stop etch fabrication method

    DOEpatents

    Simmons, Jerry A.; Weckwerth, Mark V.; Baca, Wes E.

    2000-01-01

    A class of epoxy bond and stop etch (EBASE) microelectronic fabrication techniques is disclosed. The essence of such techniques is to grow circuit components on top of a stop etch layer grown on a first substrate. The first substrate and a host substrate are then bonded together so that the circuit components are attached to the host substrate by the bonding agent. The first substrate is then removed, e.g., by a chemical or physical etching process to which the stop etch layer is resistant. EBASE fabrication methods allow access to regions of a device structure which are usually blocked by the presence of a substrate, and are of particular utility in the fabrication of ultrafast electronic and optoelectronic devices and circuits.

  17. Semiconductor structure and recess formation etch technique

    DOEpatents

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  18. Influence of the LED curing source and selective enamel etching on dentin bond strength of self-etch adhesives in class I composite restorations.

    PubMed

    Souza-Junior, Eduardo José; Araújo, Cíntia Tereza Pimenta; Prieto, Lúcia Trazzi; Paulillo, Luís Alexandre Maffei Sartini

    2012-11-01

    The aim of this study was to evaluate the influence of the LED curing unit and selective enamel etching on dentin microtensile bond strength (μTBS) for self-etch adhesives in class I composite restorations. On 96 human molars, box-shaped class I cavities were made maintaining enamel margins. Self-etch adhesives (Clearfil SE - CSE and Clearfil S(3) - S3) were used to bond a microhybrid composite. Before adhesive application, half of the teeth were enamel acid-etched and the other half was not. Adhesives and composites were cured with the following light curing units (LCUs): one polywave (UltraLume 5 - UL) and two single-peak (FlashLite 1401 - FL and Radii Cal - RD) LEDs. The specimens were then submitted to thermomechanical aging and longitudinally sectioned to obtain bonded sticks (0.9 mm(2)) to be tested in tension at 0.5 mm/min. The failure mode was then recorded. The μTBS data were submitted to a three-way ANOVA and Tukey's (α = 0.05). For S3, the selective enamel-etching provided lower μTBS values (20.7 ± 2.7) compared to the non-etched specimens (26.7 ± 2.2). UL yielded higher μTBS values (24.1 ± 3.2) in comparison to the photoactivation approach with FL (18.8 ±3.9) and RD (19.9 ±1.8) for CSE. The two-step CSE was not influenced by the enamel etching (p ≥ 0.05). Enamel acid etching in class I composite restorations affects the dentin μTBS of the one-step self-etch adhesive Clearfil S(3), with no alterations for Clearfil SE bond strength. The polywave LED promoted better bond strength for the two-step adhesive compared to the single-peak ones.

  19. Method for anisotropic etching in the manufacture of semiconductor devices

    DOEpatents

    Koontz, Steven L.; Cross, Jon B.

    1993-01-01

    Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by atomic oxygen beams (translational energies of 0.2-20 eV, preferably 1-10 eV). Etching with hyperthermal (kinetic energy>1 eV) oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask-protected areas.

  20. Method for anisotropic etching in the manufacture of semiconductor devices

    NASA Technical Reports Server (NTRS)

    Koontz, Steven L. (Inventor); Cross, Jon B. (Inventor)

    1993-01-01

    Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by hyperthermal atomic oxygen beams (translational energies of 0.2 to 20 eV, preferably 1 to 10 eV). Etching with hyperthermal oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask protected areas.

  1. Metal assisted anodic etching of silicon.

    PubMed

    Lai, Chang Quan; Zheng, Wen; Choi, W K; Thompson, Carl V

    2015-07-07

    Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P(+)-type and N(+)-type Si wafers and a wide range of nanostructure morphologies were observed, including solid Si nanowires, porous Si nanowires, a porous Si layer without Si nanowires, and porous Si nanowires on a thick porous Si layer. Formation of wires was the result of selective etching at the Au-Si interface. It was found that when the anodic contact was made through P-type or P(+)-type Si, regular anodic etching due to electronic hole injection leads to formation of porous silicon simultaneously with metal assisted anodic etching. When the anodic contact was made through N-type or N(+)-type Si, generation of electronic holes through processes such as impact ionization and tunnelling-assisted surface generation were required for etching. In addition, it was found that metal assisted anodic etching of Si with the anodic contact made through the patterned Au film essentially reproduces the phenomenology of metal assisted chemical etching (MACE), in which holes are generated through metal assisted reduction of H2O2 rather than current flow. These results clarify the linked roles of electrical and chemical processes that occur during electrochemical etching of Si.

  2. Plasma/Neutral-Beam Etching Apparatus

    NASA Technical Reports Server (NTRS)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  3. Dislocation Etching Solutions for Mercury Cadmium Selenide

    DTIC Science & Technology

    2014-09-01

    Dislocation Etching Solutions for Mercury Cadmium Selenide by Kevin Doyle and Sudhir Trivedi ARL-CR-0744 September 2014...Etching Solutions for Mercury Cadmium Selenide Kevin Doyle and Sudhir Trivedi Sensors and Electron Devices Directorate, ARL prepared by...Solutions for Mercury Cadmium Selenide 5a. CONTRACT NUMBER W811NF-12-2-0019 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Kevin Doyle and

  4. Back-etch method for plan view transmission electron microscopy sample preparation of optically opaque films.

    PubMed

    Yao, Bo; Coffey, Kevin R

    2008-04-01

    Back-etch methods have been widely used to prepare plan view transmission electron microscopy (TEM) samples of thin films on membranes by removal of the Si substrate below the membrane by backside etching. The conventional means to determine when to stop the etch process is to observe the color of the light transmitted through the sample, which is sensitive to the remaining Si thickness. However, most metallic films thicker than 75 nm are opaque, and there is no detectable color change prior to film perforation. In this paper, a back-etch method based on the observation of an abrupt change of optical reflection contrast is introduced as a means to determine the etch endpoint to prepare TEM samples for these films. As the acid etchant removes the Si substrate material a rough interface is generated. This interface becomes a relatively smooth and featureless region when the etchant reaches the membrane (film/SiO2). This featureless region is caused by the mirror reflection of the film plane (film/SiO2 interface) through the optically transparent SiO2 layer. The lower etch rate of SiO2 (compared with Si) gives the operator enough time to stop the etching without perforating the film. A clear view of the morphology and control of Si roughness during etching are critical to this method, which are discussed in detail. The procedures of mounting wax removal and sample rinsing are also described in detail, as during these steps damage to the membrane may easily occur without appropriate consideration. As examples, the preparation of 100-nm-thick Fe-based amorphous alloy thin film and 160-nm-thick Cu-thin film samples for TEM imaging is described.

  5. Plasma etching: Yesterday, today, and tomorrow

    SciTech Connect

    Donnelly, Vincent M.; Kornblit, Avinoam

    2013-09-15

    The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

  6. Investigation of Nitride Morphology After Self-Aligned Contact Etch

    NASA Technical Reports Server (NTRS)

    Hwang, Helen H.; Keil, J.; Helmer, B. A.; Chien, T.; Gopaladasu, P.; Kim, J.; Shon, J.; Biegel, Bryan (Technical Monitor)

    2001-01-01

    Self-Aligned Contact (SAC) etch has emerged as a key enabling technology for the fabrication of very large-scale memory devices. However, this is also a very challenging technology to implement from an etch viewpoint. The issues that arise range from poor oxide etch selectivity to nitride to problems with post etch nitride surface morphology. Unfortunately, the mechanisms that drive nitride loss and surface behavior remain poorly understood. Using a simple langmuir site balance model, SAC nitride etch simulations have been performed and compared to actual etched results. This approach permits the study of various etch mechanisms that may play a role in determining nitride loss and surface morphology. Particle trajectories and fluxes are computed using Monte-Carlo techniques and initial data obtained from double Langmuir probe measurements. Etched surface advancement is implemented using a shock tracking algorithm. Sticking coefficients and etch yields are adjusted to obtain the best agreement between actual etched results and simulated profiles.

  7. Dry etched SiO2 Mask for HgCdTe Etching Process

    NASA Astrophysics Data System (ADS)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  8. Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

    NASA Astrophysics Data System (ADS)

    Nakazaki, Nobuya; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2014-12-01

    Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl2 plasmas, as a function of rf bias power or ion incident energy Ei, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on Ei: one is the roughening mode at low Ei < 200-300 eV, where the root-mean-square (rms) roughness of etched surfaces increases with increasing Ei, exhibiting an almost linear increase with time during etching (t < 20 min). The other is the smoothing mode at higher Ei, where the rms surface roughness decreases substantially with Ei down to a low level < 0.4 nm, exhibiting a quasi-steady state after some increase at the initial stage (t < 1 min). Correspondingly, two different behaviors depending on Ei were also observed in the etch rate versus √{Ei } curve, and in the evolution of the power spectral density distribution of surfaces. Such changes from the roughening to smoothing modes with increasing Ei were found to correspond to changes in the predominant ion flux from feed gas ions Clx+ to ionized etch products SiClx+ caused by the increased etch rates at increased Ei, in view of the results of several plasma diagnostics. Possible mechanisms for the formation and evolution of surface roughness during plasma etching are discussed with the help of Monte Carlo simulations of the surface feature evolution and classical molecular dynamics simulations of etch fundamentals, including stochastic roughening and effects of ion reflection and etch inhibitors.

  9. Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

    SciTech Connect

    Nakazaki, Nobuya Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2014-12-14

    Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl{sub 2} plasmas, as a function of rf bias power or ion incident energy E{sub i}, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on E{sub i}: one is the roughening mode at low E{sub i} < 200–300 eV, where the root-mean-square (rms) roughness of etched surfaces increases with increasing E{sub i}, exhibiting an almost linear increase with time during etching (t < 20 min). The other is the smoothing mode at higher E{sub i}, where the rms surface roughness decreases substantially with E{sub i} down to a low level < 0.4 nm, exhibiting a quasi-steady state after some increase at the initial stage (t < 1 min). Correspondingly, two different behaviors depending on E{sub i} were also observed in the etch rate versus √(E{sub i}) curve, and in the evolution of the power spectral density distribution of surfaces. Such changes from the roughening to smoothing modes with increasing E{sub i} were found to correspond to changes in the predominant ion flux from feed gas ions Cl{sub x}{sup +} to ionized etch products SiCl{sub x}{sup +} caused by the increased etch rates at increased E{sub i}, in view of the results of several plasma diagnostics. Possible mechanisms for the formation and evolution of surface roughness during plasma etching are discussed with the help of Monte Carlo simulations of the surface feature evolution and classical molecular dynamics simulations of etch fundamentals, including stochastic roughening and effects of ion reflection and etch inhibitors.

  10. Plasma etching a ceramic composite. [evaluating microstructure

    NASA Technical Reports Server (NTRS)

    Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

    1992-01-01

    Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

  11. Pulsed plasma etching for semiconductor manufacturing

    NASA Astrophysics Data System (ADS)

    Economou, Demetre J.

    2014-07-01

    Power-modulated (pulsed) plasmas have demonstrated several advantages compared to continuous wave (CW) plasmas. Specifically, pulsed plasmas can result in a higher etching rate, better uniformity, and less structural, electrical or radiation (e.g. vacuum ultraviolet) damage. Pulsed plasmas can also ameliorate unwanted artefacts in etched micro-features such as notching, bowing, micro-trenching and aspect ratio dependent etching. As such, pulsed plasmas may be indispensable in etching of the next generation of micro-devices with a characteristic feature size in the sub-10 nm regime. This work provides an overview of principles and applications of pulsed plasmas in both electropositive (e.g. argon) and electronegative (e.g. chlorine) gases. The effect of pulsing the plasma source power (source pulsing), the electrode bias power (bias pulsing), or both source and bias power (synchronous pulsing), on the time evolution of species densities, electron energy distribution function and ion energy and angular distributions on the substrate is discussed. The resulting pulsed plasma process output (etching rate, uniformity, damage, etc) is compared, whenever possible, to that of CW plasma, under otherwise the same or similar conditions.

  12. Study on the etching process GaAs-based VCSEL

    NASA Astrophysics Data System (ADS)

    Feng, Yuan; Liu, Guojun; Hao, Yongqin; Yan, Changling; Zhang, Jiabin; Li, Yang; Li, Zaijin

    2016-11-01

    Wet etching process is a key technology in fabrication of VCSEL and their array in order to improve opto-electric characteristics of high-power VCSEL, devices with multi-ring distribution hole VCSEL is fabricated. The H3PO4 etching solution was used in the wet etching progress and etching rate is studied by changing etching solution concentration and etching time. The optimum technological conditions were determined by studying the etching morphology and etching depth of the GaAs-VCSEL. The tested results show that the complete morphology and the appropriate depth can be obtained by using the concentration ratio of 1:1:10, which can meet the requirements of GaAs-based VCSEL micro- structure etching process.

  13. Geometric characteristics of silicon cavities etched in EDP

    NASA Astrophysics Data System (ADS)

    Ju, Hui; Ohta, Takayuki; Ito, Masafumi; Sasaki, Minoru; Hane, Kazuhiro; Hori, Masaru

    2007-05-01

    Etching characteristics of hexagonal and triangular cavities on a lang1 1 1rang-oriented silicon wafer in the etchant of ethylene diamine, pyrocatechol and water (EDP/EPW) were investigated. The patterns are aligned to keep the sides perpendicular to lang1 1 0rang crystal orientations, in order that the sidewalls of cavities are parallel to {1 1 0} crystalline planes. RIE-ICP etching is used to define the depth of the triangular and hexagonal cavities, and EDP etching is followed for different etching times. The final self-etch-stop profiles of cavities are determined by the dimension of mask patterns and the depth of cavities in the wafer. The etching process of the hexagon and triangle cavities is modeled, based on the crystal structure and wet etching principle. The results of etched cavities confirm the condition to determine the final etching profiles.

  14. Effect of MTAD on the shear bond strength of self-etch adhesives to dentin

    PubMed Central

    Mortazavi, Vajihesadat; Khademi, Abbasali; Khosravi, Kazem; Fathi, Mohammadhossein; Ebrahimi–Chaharom, Mohammadesmaeil; Shahnaseri, Shirin; Khalighinejad, Navid; Badrian, Hamid

    2012-01-01

    Background: As the use of different irrigants to eliminate residual debris and smear layer in the field of endodontic is unavoidable, by considering the effect of irrigants on the bond strength of resin composite restorations, this study was designed to evaluate the effect of a mixture of a tetracycline isomer, an acid, and a detergent (MTAD) on the shear bond strength of two self-etch adhesives, Clearfil SE Bond and Adper Prompt L- Pop to dentin. Materials and Methods: The crowns of 80 extracted premolars were transversally sectioned to expose dentin. Flat dentin surfaces were wet abraded with 320-grit abrasive paper and randomly assigned to eight groups according to two self-etch adhesive and four dentin surface treatments: direct application over smear layer (no treatment), etching with 35% phosphoric acid for 15s, 1 min 5.25% NaOCl/1 min MTAD and 20min 1.3% NaOCl/5min MTAD. Shear bond strength was tested 24 h after storage in distilled water at 37°C in incubator. Data were analyzed using one-way ANOVA followed by duncan post-hoc (α=0.05). Results: Phosphoric acid etching prior to SE Bond application significantly decreased the shear bond strength to dentin (P<0.05). Application of MTAD clinical protocol (20min 1.3% NaOCl/5min MTAD) did not significantly decrease the shear bond strength of self-etch adhesives to dentin (P=0.745) Conclusions: Based on the results of present investigation, it seems that the use of clinical protocol of 1.3% NaOCl as a root canal irrigant and a 5-min application of MTAD as a final rinse to remove the smear layer has no adverse effect on the shear bond strength of self-etch adhesives to dentin. PMID:22363359

  15. ICP Etching of SiC

    SciTech Connect

    Grow, J.M.; Lambers, E.S.; Ostling, M.; Pearton, S.J.; Ren, F.; Shul, R.J.; Wang, J.J.; Zetterling, C.-M.

    1999-02-04

    A number of different plasma chemistries, including NF{sub 3}/O{sub 2}, SF{sub 6}/O{sub 2}, SF{sub 6}/Ar, ICl, IBr, Cl{sub 2}/Ar, BCl{sub 3}/Ar and CH{sub 4}/H{sub 2}/Ar, have been investigated for dry etching of 6H and 3C-SiC in a Inductively Coupled Plasma tool. Rates above 2,000 {angstrom} cm{sup {minus}1} are found with fluorine-based chemistries at high ion currents. Surprisingly, Cl{sub 2}-based etching does not provide high rates, even though the potential etch products (SiCi{sub 4} and CCl{sub 4}) are volatile. Photoresist masks have poor selectivity over SiC in F{sub 2}-based plasmas under normal conditions, and ITO or Ni are preferred.

  16. Etching of nanopatterns in silicon using nanopantography

    NASA Astrophysics Data System (ADS)

    Xu, Lin; Nasrullah, Azeem; Chen, Zhiying; Jain, Manish; Ruchhoeft, Paul; Economou, Demetre J.; Donnelly, Vincent M.

    2008-01-01

    Nanopantography is a technique for parallel writing of nanopatterns over large areas. A broad ion beam impinges on a substrate containing many microfabricated electrostatic lenses that focus ions to spots at the substrate surface. Here, etching of nanopatterns is demonstrated. The substrate was continuously titled about x and y axes with 0.11° precision, corresponding to a translation of the ion foci of 1.5nm on the substrate. With tilting in one direction, 15nm full width at half maximum trenches 45nm deep were etched into a Si wafer using an Ar+ beam in a Cl2 ambient. T-shaped patterns were etched by tilting the substrates in two directions.

  17. Radicals Are Required for Thiol Etching of Gold Particles.

    PubMed

    Dreier, Timothy A; Ackerson, Christopher J

    2015-08-03

    Etching of gold with an excess of thiol ligand is used in both synthesis and analysis of gold particles. Mechanistically, the process of etching gold with excess thiol is unclear. Previous studies have obliquely considered the role of oxygen in thiolate etching of gold. Herein, we show that oxygen or a radical initiator is a necessary component for efficient etching of gold by thiolates. Attenuation of the etching process by radical scavengers in the presence of oxygen, and the restoration of activity by radical initiators under inert atmosphere, strongly implicate the oxygen radical. These data led us to propose an atomistic mechanism in which the oxygen radical initiates the etching process.

  18. Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

    SciTech Connect

    Posseme, N. Pollet, O.; Barnola, S.

    2014-08-04

    Silicon nitride spacer etching realization is considered today as one of the most challenging of the etch process for the new devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium with a perfect anisotropy (no foot formation) is required. The situation is that none of the current plasma technologies can meet all these requirements. To overcome these issues and meet the highly complex requirements imposed by device fabrication processes, we recently proposed an alternative etching process to the current plasma etch chemistries. This process is based on thin film modification by light ions implantation followed by a selective removal of the modified layer with respect to the non-modified material. In this Letter, we demonstrate the benefit of this alternative etch method in term of film damage control (silicon germanium recess obtained is less than 6 A), anisotropy (no foot formation), and its compatibility with other integration steps like epitaxial. The etch mechanisms of this approach are also addressed.

  19. Single beam determination of porosity and etch rate in situ during etching of porous silicon

    NASA Astrophysics Data System (ADS)

    Foss, S. E.; Kan, P. Y. Y.; Finstad, T. G.

    2005-06-01

    A laser reflection method has been developed and tested for analyzing the etching of porous silicon (PS) films. It allows in situ measurement and analysis of the time dependency of the etch rate, the thickness, the average porosity, the porosity profile, and the interface roughness. The interaction of an infrared laser beam with a layered system consisting of a PS layer and a substrate during etching results in interferences in the reflected beam which is analyzed by the short-time Fourier transform. This method is used for analysis of samples prepared with etching solutions containing different concentrations of HF and glycerol and at different current densities and temperatures. Variations in the etch rate and porosity during etching are observed, which are important effects to account for when optical elements in PS are made. The method enables feedback control of the etching so that PS films with a well-controlled porosity are obtainable. By using different beam diameters it is possible to probe interface roughness at different length scales. Obtained porosity, thickness, and roughness values are in agreement with values measured with standard methods.

  20. SEMICONDUCTOR TECHNOLOGY: Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

    NASA Astrophysics Data System (ADS)

    Yongliang, Li; Qiuxia, Xu

    2010-03-01

    The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 °C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.

  1. Etching of InP by H3PO4, H2O2 Solutions

    NASA Astrophysics Data System (ADS)

    Mouton, A.; Sundararaman, C. S.; Lafontaine, H.; Poulin, S.; Currie, J. F.

    1990-10-01

    This paper deals with the chemical etching of (100) InP using a phosphoric acid and hydrogen peroxide mixture. It is shown that the etching rate is strongly dependent on the relative concentration of the two species; it is maximal for an equivolumic solution, and depending on the dilution it ranges from 70 to 20 Å/min. The activation energy of a non-diluted solution is approximately 14 kcal/mol. The post-etch surface state of the sample analysed by SEM and XPS, shows a very smooth surface for all concentrations, and the formation of a InPO4\\cdotxH2O layer. This solution can be used as a very precise etchant in devices processes.

  2. Effects of chlorhexidine in self-etching adhesive: 24 hours results.

    PubMed

    Nishitani, Yoshihiro; Hosaka, Keiichi; Hoshika, Tomohiro; Yoshiyama, Masahiro; Pashley, David H

    2013-01-01

    It is known that chlorhexidine (CHX) does not inhibit micro-tensile bond strengths (MTBS) when it is used in etch-and-rinse adhesives. In that technique, CHX is applied to dentin as a primer after phosphoric acid-etching before bonding with Single Bond. It would be more convenient if it is possible to incorporate CHX into the adhesive. The purpose of this study was to compare the MTBS and the FT-IR percent conversion of an all-in-one self-etching adhesives contained varying concentration of CHX. Extracted human third molars were bonded with a control all-in-one adhesive or experimental versions containing 0.5, 1, 2 or 5% CHX. The MTBS and the percent conversion of experimental adhesives containing up to 1% CHX were not significantly CHX-free control adhesives. However, addition of 2 or especially 5% CHX experimental adhesives produced significant reductions in both the MTBS and the percent conversion.

  3. Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching

    SciTech Connect

    Cybart, Shane; Roediger, Peter; Ulin-Avila, Erick; Wu, Stephen; Wong, Travis; Dynes, Robert

    2012-11-30

    We demonstrate a low pressure reactive ion etching process capable of patterning nanometer scale angled sidewalls and three dimensional structures in photoresist. At low pressure the plasma has a large dark space region where the etchant ions have very large highly-directional mean free paths. Mounting the sample entirely within this dark space allows for etching at angles relative to the cathode with minimal undercutting, resulting in high-aspect ratio nanometer scale angled features. By reversing the initial angle and performing a second etch we create three-dimensional mask profiles.

  4. Dry-etching resistance of fluoropolymers for 157-nm single-layer resists

    NASA Astrophysics Data System (ADS)

    Kawaguchi, Yasuhide; Irisawa, Jun; Kodama, Shun-ichi; Okada, Shinji; Takebe, Yoko; Kaneko, Isamu; Yokokoji, Osamu; Ishikawa, Seiichi; Irie, Shigeo; Hagiwara, Takuya; Itani, Toshiro

    2003-06-01

    Novel fluoropolymers having partially fluorinated monocyclic (5-membered and 6-membered ring) structure have been synthesized with radical cyclo-polymerization, which have C-F bond in the polymer main chain and also possess fluorocontaining acidic alcohol group. These polymers have excellent transparency lower than 1.0 μm-1 at 157nm wavelength, a small amount of outgassing, high sensitivity and good adhesion to the wafer. However, this fluoropolymer have lower etching resistance (half of conventional KrF resists) and it must be improved for applying to the single-layer resist. In this paper, we show the new model of the estimation of the dry-etching resistance for designing polymer compositions. It is well known that the model using carbon-atom-density as a parameter is useful for estimating dry-etching resistance. However, these models did not agree with the results of our fluoropolymers. Our new model was focused on the surface area and the volume of the polymer. We succeeded to explain the relationship between the dry-etching resistance and the composition of the fluoropolymer. According to this model, the compositions of fluoropolymer such as protective groups, protective ration and co-polymer units were optimized to improve their etching resistance.

  5. Evaluation of Cu Ion Concentration Effects on Cu Etching Rate in Chemical-Mechanical Polishing Slurry

    NASA Astrophysics Data System (ADS)

    Nishizawa, Hideaki; Sugiura, Osamu; Matsumura, Yoshiyuki; Kinoshita, Masaharu

    2007-04-01

    The effects of Cu ion concentration of the different solutions on Cu etching rate were investigated. From the dipping experiment of Cu substrates in different solutions of malic acid, hydrogen peroxide (H2O2), benzotriazole (BTA), and Cu ions, it was revealed that Cu etching rate is increased if the concentration of Cu(II) ions added in the solution is high. This is considered to be caused by the effect of Cu(II) ions on H2O2 molecules. In the solution of pH 7, the Cu etching rate increased markedly between 1.7× 10-4 and 3.4× 10-4 M Cu(II) ion concentrations. The maximum increase in the etching rate was from 990 to 2200 nm/min at a H2O2 concentration of 2 wt %. In the solution of pH 3, a marked change in the etching rate was not observed. Our results show that the concentration of Cu ions on the polishing pad in chemical-mechanical polishing (CMP) process is very important.

  6. Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching

    PubMed Central

    2014-01-01

    In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface. PMID:24495647

  7. Study on sapphire microstructure processing technology based on wet etching

    NASA Astrophysics Data System (ADS)

    Shang, Ying-Qi; Qi, Hong; Ma, Yun-Long; Wu, Ya-Lin; Zhang, Yan; Chen, Jing

    2017-03-01

    Aiming at the problem that sapphire surface roughness is quite large after wet etching in sapphire microstructure processing technology, we optimize the wet etching process parameters, study on the influences of concentration and temperature of etching solution and etching time on the sapphire surface roughness and etching rate, choose different process parameters for the experiment and test and analyze the sapphire results after wet etching. Aiming at test results, we also optimize the process parameters and do experiment. Experimental results show that, after optimizing the parameters of etching solution, surface roughness of etched sapphire is 0.39 nm, effectively with reduced surface roughness, improved light extraction efficiency and meeting the production requirements of high-precision optical pressure sensor.

  8. Etch Profile Simulation Using Level Set Methods

    NASA Technical Reports Server (NTRS)

    Hwang, Helen H.; Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

    1997-01-01

    Etching and deposition of materials are critical steps in semiconductor processing for device manufacturing. Both etching and deposition may have isotropic and anisotropic components, due to directional sputtering and redeposition of materials, for example. Previous attempts at modeling profile evolution have used so-called "string theory" to simulate the moving solid-gas interface between the semiconductor and the plasma. One complication of this method is that extensive de-looping schemes are required at the profile corners. We will present a 2D profile evolution simulation using level set theory to model the surface. (1) By embedding the location of the interface in a field variable, the need for de-looping schemes is eliminated and profile corners are more accurately modeled. This level set profile evolution model will calculate both isotropic and anisotropic etch and deposition rates of a substrate in low pressure (10s mTorr) plasmas, considering the incident ion energy angular distribution functions and neutral fluxes. We will present etching profiles of Si substrates in Ar/Cl2 discharges for various incident ion energies and trench geometries.

  9. Technique for etching monolayer and multilayer materials

    DOEpatents

    Bouet, Nathalie C. D.; Conley, Raymond P.; Divan, Ralu; Macrander, Albert

    2015-10-06

    A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

  10. Influence of different repair procedures on bond strength of adhesive filling materials to etched enamel in vitro.

    PubMed

    Hannig, Christian; Hahn, Petra; Thiele, Patrick-Philipp; Attin, Thomas

    2003-01-01

    Contamination of etched enamel with repair bond agents during repair of dental restorations may interfere with the bonding of composite to enamel. This study examined the bond strength of adhesive filling materials to etched bovine enamel after pre-treatment with the repair systems Monobond S, Silibond and Co-Jet. The materials Tetric Ceram, Dyract and Definite and their corresponding bonding agents (Syntac Single Comp, Prime & Bond NT, Etch and Prime) were tested in combination with the repair systems. One hundred and thirty-five enamel specimens were etched (37% phosphoric acid, 60 seconds) and equally distributed among three groups (A-C). In Group A, the repair materials were applied on etched enamel followed by applying the composite materials without using their respective bonding material. In Group B, the composite materials were placed on etched enamel after applying the repair materials and bonding agents. In control Group C, the composite materials and bonding agents were applied on etched enamel without using the repair systems. In each sub-group, every composite material was applied on 15 specimens. Samples were stored in artificial saliva for 14 days and thermocycled 1,000 times (5 degrees C/55 degrees C). The shear bond strength of the samples were then determined in a universal testing machine (ISO 10477). Applying Monobond or Silibond followed by the use of its respective bonding agents resulted in a bond strength that was not statistically different from the controls for all filling materials (Group C). The three composites that used Monobond and Silibond without applying the corresponding bonding agent resulted in bond strengths that were significantly lower than the controls. Utilizing the Co-Jet-System drastically reduced the bond strength of composites on etched enamel. Contamination of etched enamel with the repairing bonding agents Monobond and Silibond does not interfere with bond strength if the application of Monobond and Silibond is

  11. Wet KOH etching of freestanding AlN single crystals

    NASA Astrophysics Data System (ADS)

    Bickermann, M.; Schmidt, S.; Epelbaum, B. M.; Heimann, P.; Nagata, S.; Winnacker, A.

    2007-03-01

    We investigated defect-selective wet chemical etching of freestanding aluminum nitride (AlN) single crystals and polished cuts in a molten NaOH-KOH eutectic at temperatures ranging from 240 to 400 °C. Due to the strong anisotropy of the AlN wurtzite structure, different AlN faces get etched at very different etching rates. On as-grown rhombohedral and prismatic facets, defect-related etching features could not be traced, as etching these facets was found to mainly emphasize features present already on the un-etched surface. On nitrogen polar basal planes, hexagonal pyramids/hillocks exceeding 100 μm in diameter may form within seconds of etching at 240 °C. They sometimes are arranged in lines and clusters, thus we attribute them to defects on the surface, presumably originating in the bulk material. On aluminum polar basal planes, the etch pit density which saturates after approx. 2-3 min of total etching time at 350 °C equals the density of a certain type of dislocations (presumably screw dislocations) threading the surface. Smaller etch pits form around annealed indentations, in the vicinity of some bigger etch pits after repeated etching, and sometimes also isolated on the surface area. Although alternate explanations exist, we attribute these etch pits to threading mixed and edge dislocations. This paper features etching parameters optimized for different planes and models on the formation of etching features especially on the polar faces. Finally, the issue of reliability and reproducibility of defect detection and evaluation by wet chemical etching is addressed.

  12. High index contrast polysiloxane waveguides fabricated by dry etching

    SciTech Connect

    Madden, S. J.; Zhang, M. Y.; Choi, D.-Y.; Luther-Davies, B.; Charters, R.

    2009-05-15

    The authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPG trade mark sign polysiloxane thin films. The use of a silica mask and CHF{sub 3}/O{sub 2} etch gas led to large etch selectivity between the silica and IPG trade mark sign of >20 and etch rates of >100 nm/min. This work indicates that compact optical circuits could be successfully fabricated for telecommunication applications using polysiloxane films.

  13. Use of lower-end technology etch platforms for high-etch loads

    NASA Astrophysics Data System (ADS)

    Nemelka, Jefferson O.

    2003-12-01

    In order to meet the needs of multiple customers with varying design specifications, merchant photomask suppliers need to provide photomasks for a wide range of design patterns. Some masks require etching less than 1% of the total mask film, while others require etching over 80% of the mask. Etching masks with these extremes in pattern loads can often require upgrading existing tool sets, particularly as the mask specifications become tighter. One alternative to upgrading tools is to develop new load-specific processes on existing lower-end tools, which requires a substantial amount of development work. Dry etching MoSi Embedded Attenuating Phase Shift Material using sulfur hexafluoride and helium under all etch loads presents challenges in the Unaxis Generation II mask etch platform. Etch processes developed for low load masks cannot always be used for high load masks due to problems in maintaining a stable process with good performance. In order to improve the etch performance for high MoSi loads (> 70% clear), a Gen II specific hardware design which can adversely affect uniformity at high loads was identified and eliminated as a dominant source of non-uniformity. A DOE studying total gas flow, He/SF6 ratio, pressure, ICP, and RIE power was then used to identify a stable process window for high MoSi loads. Another DOE studying the effects of pressure, ICP power, and RIE power on process uniformity was then carried out within the stable process window. Process conditions were identified which produced highly loaded 248nm and 193nm EAPSM masks with phase uniformity below 3°. Sidewall profiles were vertical for 193nm MoSi films but were slightly tapered for 248nm MoSi films, both with less than 5nm of CD bias.

  14. Wettability investigating on the wet etching textured multicrystalline silicon wafer

    NASA Astrophysics Data System (ADS)

    Liu, Xiangju; Niu, Yuchao; Zhai, Tongguang; Ma, Yuying; Zhen, Yongtai; Ma, Xiaoyu; Gao, Ying

    2016-02-01

    In order to investigate the wettability properties of multicrystalline silicon (mc-Si), the different surface structures were fabricated on the as-cut p-type multi-wire slurry sawn mc-Si wafers, such as as-cut, polished and etched in various acid solutions. The contact angles and the XRD spectra of these samples were measured. It was noted that both the surface structures and the use of surfactant, such as Tween 80, made a stronger effect on wettability of the Si wafer. Due to the lipophilic groups of Tween 80 combined with the Si atoms while the hydrophilic groups of it were outward, a lipophilic surface of Si changed into a hydrophilic one and the rougher the surface, the stronger the hydrophily. Thus, it is feasible to add an appropriate surfactant into the etching solution during black-Si wafer fabrication for solar cells. In addition, different crystal plains of Si had different dangling bond density, so that their surface energies were different. A surface with higher surface energy could attract more water atoms and its wettability was better. However, the effect of crystal plain on the surface wettability was much weaker than surface morphology.

  15. CR-39 track etching and blow-up method

    DOEpatents

    Hankins, Dale E.

    1987-01-01

    This invention is a method of etching tracks in CR-39 foil to obtain uniformly sized tracks. The invention comprises a step of electrochemically etching the foil at a low frequency and a "blow-up" step of electrochemically etching the foil at a high frequency.

  16. New phase formation in titanium aluminide during chemical etching

    SciTech Connect

    Takasaki, Akito; Ojima, Kozo; Taneda, Youji . Dept. of Mathematics and Physics)

    1994-05-01

    A chemical etching technique is widely used for metallographic observation. Because this technique is based on a local corrosion phenomenon on a sample, the etching mechanism, particularly for two-phase alloys, can be understood by electrochemical consideration. This paper describes formation of a new phase in a Ti-45Al (at.%) titanium aluminide during chemical etching, and the experimental results are discussed electrochemically.

  17. Dopant Selective Reactive Ion Etching of Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Okojie, Robert (Inventor)

    2016-01-01

    A method for selectively etching a substrate is provided. In one embodiment, an epilayer is grown on top of the substrate. A resistive element may be defined and etched into the epilayer. On the other side of the substrate, the substrate is selectively etched up to the resistive element, leaving a suspended resistive element.

  18. Is total-etch dead? Evidence suggests otherwise.

    PubMed

    Alex, Gary

    2012-01-01

    Both the total-etch and self-etching systems of today have the potential to provide durable adhesive interface, and despite the proclamations of some, total-etch is alive and well. Indeed, evidence indicates that a viable and growing market remains for total-etch adhesive systems. This paper will discuss the origins, evolution, and idiosyncrasies of the total-etch technique as well as its place in dentistry today. New innovations, the use of antimicrobials to inhibit matrix metalloproteinases (MMPs), and sensitivity issues will also be discussed.

  19. Chemically assisted ion beam etching of polycrystalline and (100)tungsten

    NASA Technical Reports Server (NTRS)

    Garner, Charles

    1987-01-01

    A chemically assisted ion-beam etching technique is described which employs an ion beam from an electron-bombardment ion source and a directed flux of ClF3 neutrals. This technique enables the etching of tungsten foils and films in excess of 40 microns thick with good anisotropy and pattern definition over areas of 30 sq mm, and with a high degree of selectivity. (100) tungsten foils etched with this process exhibit preferred-orientation etching, while polycrystalline tungsten films exhibit high etch rates. This technique can be used to pattern the dispenser cathode surfaces serving as electron emitters in traveling-wave tubes to a controlled porosity.

  20. Biomachining: metal etching via microorganisms.

    PubMed

    Díaz-Tena, Estíbaliz; Barona, Astrid; Gallastegui, Gorka; Rodríguez, Adrián; López de Lacalle, L Norberto; Elías, Ana

    2017-05-01

    The use of microorganisms to remove metal from a workpiece is known as biological machining or biomachining, and it has gained in both importance and scientific relevance over the past decade. Conversely to mechanical methods, the use of readily available microorganisms is low-energy consuming, and no thermal damage is caused during biomachining. The performance of this sustainable process is assessed by the material removal rate, and certain parameters have to be controlled for manufacturing the machined part with the desired surface finish. Although the variety of microorganisms is scarce, cell concentration or density plays an important role in the process. There is a need to control the temperature to maintain microorganism activity at its optimum, and a suitable shaking rate provides an efficient contact between the workpiece and the biological medium. The system's tolerance to the sharp changes in pH is quite limited, and in many cases, an acid medium has to be maintained for effective performance. This process is highly dependent on the type of metal being removed. Consequently, the operating parameters need to be determined on a case-by-case basis. The biomachining time is another variable with a direct impact on the removal rate. This biological technique can be used for machining simple and complex shapes, such as series of linear, circular, and square micropatterns on different metal surfaces. The optimal biomachining process should be fast enough to ensure high production, a smooth and homogenous surface finish and, in sum, a high-quality piece. As a result of the high global demand for micro-components, biomachining provides an effective and sustainable alternative. However, its industrial-scale implementation is still pending.

  1. Bulk Etch Rate and Swell Rate of CR-39

    NASA Astrophysics Data System (ADS)

    Clarkson, David; Ume, Rubab; Sheets, Rebecca; Regan, Sean; Sangster, Craig; Padalino, Stephen; McLean, James

    2016-10-01

    The use of CR-39 plastic as a Solid State Nuclear Track Detector is an effective technique for obtaining data in high-energy particle experiments including inertial confinement fusion. To reveal particle tracks after irradiation, CR-39 is chemically etched in NaOH at 80°C, producing micron-scale signal pits at the nuclear track sites. The development of these pits depends on both the bulk etch rate and the faster etch rate along the track, and is complicated by swelling as water is absorbed. Contrary to common etching models, we find the bulk etch rate to be depth dependent within 15 μ m of the surface, as revealed by swelling TASTRACK CR-39 pieces to their maximum capacity prior to etching. The bulk etch rate was measured using the standard mass method as well as the fission fragment track diameter method. Combining models of swelling and etching rates predicts the progress of bulk etching during a standard etch, without pre-swelling. This result has implications for the understanding the chemistry of the etch process, as well as the outcome of CR-39 surface preparation methods. Funded in part by a LLE contract through the DOE.

  2. Surface engineering of SiC via sublimation etching

    NASA Astrophysics Data System (ADS)

    Jokubavicius, Valdas; Yazdi, Gholam R.; Ivanov, Ivan G.; Niu, Yuran; Zakharov, Alexei; Iakimov, Tihomir; Syväjärvi, Mikael; Yakimova, Rositsa

    2016-12-01

    We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10-5 mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.

  3. Dry-etch resistance of fluorine functionalized polymers

    NASA Astrophysics Data System (ADS)

    Koh, Meiten; Ishikawa, Takuji; Araki, Takayuki; Aoyama, Hirokazu; Yamashita, Tsuneo; Yamazaki, Tamio; Watanabe, Hiroyuki; Toriumi, Minoru; Itani, Toshiro

    2002-07-01

    The reactive ion etch (RIE) properties of fluorine funtionalized polymers in which fluorine atoms were incorporated in the main chain were examined. There was a tendency that the etching rates of these polymers were higher as lower the fluorine contents. The existing four models such as the Ohnishi model, the Kunz model, the Ohfuji model and the Kishimura model were applied to explain the correlation between the etching rates and the polymer compositions or structures, but the errors were too large to explain the relationship. A new model has developed to explain the effect of the fluorine incorporation to the dry etch resistance. The model assumed that there would be a correlation between the number of main chain fluorine atoms and the dry etch resistance, and the main chain fluorine incorporation would increase the dry etch resistance. The model could explain the dry etch resistance of the main chain fluorine incorporated polymers with adequate accuracy.

  4. Structure dependent hydrogen induced etching features of graphene crystals

    NASA Astrophysics Data System (ADS)

    Thangaraja, Amutha; Shinde, Sachin M.; Kalita, Golap; Papon, Remi; Sharma, Subash; Vishwakarma, Riteshkumar; Sharma, Kamal P.; Tanemura, Masaki

    2015-06-01

    H2 induced etching of graphene is of significant interest to understand graphene growth process as well as to fabricate nanoribbons and various other structures. Here, we demonstrate the structure dependent H2 induced etching behavior of graphene crystals. We synthesized graphene crystals on electro-polished Cu foil by an atmospheric pressure chemical vapor deposition process, where some of the crystals showed hexagonal shaped snowflake-dendritic morphology. Significant differences in H2 induced etching behavior were observed for the snowflake-dendritic and regular graphene crystals by annealing in a gas mixture of H2 and Ar. The regular graphene crystals were etched anisotropically creating hexagonal holes with pronounced edges, while etching of all the dendritic crystals occurred from the branches of lobs creating symmetrical fractal structures. The etching behavior provides important clue of graphene nucleation and growth as well as their selective etching to fabricate well-defined structures for nanoelectronics.

  5. Development of Wet-Etching Tools for Precision Optical Figuring

    SciTech Connect

    Rushford, M C; Dixit, S N; Hyde, R; Britten, J A; Nissen, J; Aasen, M; Toeppen, J; Hoaglan, C; Nelson, C; Summers, L; Thomas, I

    2004-01-27

    This FY03 final report on Wet Etch Figuring involves a 2D thermal tool. Its purpose is to flatten (0.3 to 1 mm thickness) sheets of glass faster thus cheaper than conventional sub aperture tools. An array of resistors on a circuit board was used to heat acid over the glass Optical Path Difference (OPD) thick spots and at times this heating extended over the most of the glass aperture. Where the acid is heated on the glass it dissolves faster. A self-referencing interferometer measured the glass thickness, its design taking advantage of the parallel nature and thinness of these glass sheets. This measurement is used in close loop control of the heating patterns of the circuit board thus glass and acid. Only the glass and acid were to be moved to make the tool logistically simple to use in mass production. A set of 4-circuit board, covering 80 x 80-cm aperture was ordered, but only one 40 x 40-cm board was put together and tested for this report. The interferometer measurement of glass OPD was slower than needed on some glass profiles. Sometimes the interference fringes were too fine to resolve which would alias the sign of the glass thickness profile. This also caused the phase unwrapping code (FLYNN) to struggle thus run slowly at times taking hours, for a 10 inch square area. We did extensive work to improve the speed of this code. We tried many different phase unwrapping codes. Eventually running (FLYNN) on a farm of networked computers. Most of the work reported here is therefore limited to a 10-inch square aperture. Researched into fabricating a better interferometer lens from Plexiglas so to have less of the scattered light issues of Fresnel lens groves near field scattering patterns, this set the Nyquest limit. There was also a problem with the initial concept of wetting the 1737 glass on its bottom side with acid. The wetted 1737 glass developed an Achromatic AR coating, spoiling the reflection needed to see glass thickness interference fringes. In response

  6. Modeling of plasma etch profiles with ions and reactive neutrals

    NASA Astrophysics Data System (ADS)

    Wang, Chungdar Daniel

    1999-11-01

    The simulation of plasma etch profiles of semiconductor trenches in the wafer processing of integrated circuits is developed in a mixed analytic/numerical approach. The main contributions of this study are the derivation and use of explicit analytical expressions for the etch rates and the computation of the etch profiles by standard computer packages. The computation of the etch profiles is efficient, is used as a benchmark for more complex numerical computer codes and illuminates the parameter dependence. The etch rate due to the ions is assumed proportional to the ion energy flux as suggested by experimental evidence. The shadowing due to the mask is included in the simplified derivation of the ion energy flux in cylindrical velocity coordinates for a two-temperature ion drifting Maxwellian. Neutrals with varying sticking coefficients are modeled by interpolation between the etch rate for shadowed neutrals with unity sticking coefficients and isotropic neutrals. The etch profiles are determined by the method of characteristics from the nonlinear evolution equation for the etch profile surface. Standard Matlab packages for the graphics and integration of the ordinary differential equations for the characteristics make the computation of etch profiles more efficient and more transparent than many complicated computer codes. The SEM images for trenches etched in silicon in a SF6 plasma in a RIE reactor are modeled by the simulation method for etch profiles. The etch rate is a linear combination of the etch rates of ions and neutrals in the ion flux-limited regime. Monte Carlo simulation of ion distribution functions in a chlorine plasma are fit by a simulated annealing procedure to a set of two-temperature drifting Maxwellians. The Monte Carlo simulations are noisy due to insufficient numbers of simulation particles. Smoothing of the distribution functions produces the expected bimodal ion distribution functions in the ICP reactor. The resultant etch profiles for

  7. Digital Electrochemical Etching of Compound Semiconductors

    DTIC Science & Technology

    1992-05-26

    Cd is stripped by oxidation to Cd2+. Underpotentials are chosen so that only the top atomic layer of an element is removed. Potentials sufficient to...the compound. The two potentials of the square wave correspond to underpotential stripping potentials for Cd and Te respectively. Directions for the...for the etching of CdTe. For CdTe, Te is stripped by reduction to Tel while Cd is stripped by oxidation to Cd2 . Underpotentials are chosen o that only

  8. Plasma etching for advanced polymer optical devices

    NASA Astrophysics Data System (ADS)

    Bitting, Donald S.

    Plasma etching is a common microfabrication technique which can be applied to polymers as well as glasses, metals, and semiconductors. The fabrication of low loss and reliable polymer optical devices commonly makes use of advanced microfabrication processing techniques similar in nature to those utilized in standard semiconductor fabrication technology. Among these techniques, plasma/reactive ion etching is commonly used in the formation of waveguiding core structures. Plasma etching is a powerful processing technique with many potential applications in the emerging field of polymer optical device fabrication. One such promising application explored in this study is in the area of thin film-substrate adhesion enhancement. Two approaches involving plasma processing were evaluated to improve substrate-thin film adhesion in the production of polymer waveguide optical devices. Plasma treatment of polymer substrates such as polycarbonate has been studied to promote the adhesion of fluoropolymer thin film coatings for waveguide device fabrication. The effects of blanket oxygen plasma etchback on substrate, microstructural substrate feature formation, and the long term performance and reliability of these methods were investigated. Use of a blanket oxygen plasma to alter the polycarbonate surface prior to fluoropolymer casting was found to have positive but limited capability to improve the adhesive strength between these polymers. Experiments show a strong correlation between surface roughness and adhesion strength. The formation of small scale surface features using microlithography and plasma etching on the polycarbonate surface proved to provide outstanding adhesion strength when compared to any other known treatment methods. Long term environmental performance testing of these surface treatment methods provided validating data. Test results showed these process approaches to be effective solutions to the problem of adhesion between hydrocarbon based polymer

  9. Etching of moldavities under natural conditions

    NASA Technical Reports Server (NTRS)

    Knobloch, V.; Knoblochova, Z.; Urbanec, Z.

    1983-01-01

    The hypothesis that a part of the lechatellierites which originated by etching from a basic moldavite mass became broken off after deposition of moldavite in the sedimentation layer is advanced. Those found close to the original moldavite were measured for statistical averaging of length. The average length of lechatelierite fibers per cubic mm of moldavite mass volume was determined by measurement under a microscope in toluene. The data were used to calculate the depth of the moldavite layer that had to be etched to produce the corresponding amount of lechatelierite fragments. The calculations from five "fields" of moldavite surface, where layers of fixed lechatelierite fragments were preserved, produced values of 2.0, 3.1, 3.5, 3.9 and 4.5. Due to inadvertent loss of some fragments the determined values are somewhat lower than those found in references. The difference may be explained by the fact that the depth of the layer is only that caused by etching after moldavite deposition.

  10. Effect of a functional monomer (MDP) on the enamel bond durability of single-step self-etch adhesives.

    PubMed

    Tsuchiya, Kenji; Takamizawa, Toshiki; Barkmeier, Wayne W; Tsubota, Keishi; Tsujimoto, Akimasa; Berry, Thomas P; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

    2016-02-01

    The present study aimed to determine the effect of the functional monomer, 10-methacryloxydecyl dihydrogen phosphate (MDP), on the enamel bond durability of single-step self-etch adhesives through integrating fatigue testing and long-term water storage. An MDP-containing self-etch adhesive, Clearfil Bond SE ONE (SE), and an experimental adhesive, MDP-free (MF), which comprised the same ingredients as SE apart from MDP, were used. Shear bond strength (SBS) and shear fatigue strength (SFS) were measured with or without phosphoric acid pre-etching. The specimens were stored in distilled water for 24 h, 6 months, or 1 yr. Although similar SBS and SFS values were obtained for SE with pre-etching and for MF after 24 h of storage in distilled water, SE with pre-etching showed higher SBS and SFS values than MF after storage in water for 6 months or 1 yr. Regardless of the pre-etching procedure, SE showed higher SBS and SFS values after 6 months of storage in distilled water than after 24 h or 1 yr. To conclude, MDP might play an important role in enhancing not only bond strength but also bond durability with respect to repeated subcritical loading after long-term water storage.

  11. Three step deep reactive ion etch for high density trench etching

    NASA Astrophysics Data System (ADS)

    Lips, B.; Puers, R.

    2016-10-01

    A three step Deep Reactive Ion Etch (DRIE) process is developed to etch trenches of 10μm wide to a depth of 130μm into silicon with an etch rate of 2.5μm min-1. The aim of this process is to obtain sidewalls with an angle close to 90°. The process allows the etching of multiple trenches with high aspect ratios that are closely placed together. A three step approach is used as opposed to the more conventional two step approach in an attempt to improve the etching selectivity with respect to the masking material. By doing so, a simple AZ6632 positive photoresist could be used instead of the more commonly used metal masks which are harder to remove afterwards. In order to develop this process, four parameters, which are the bias power, processing pressure, step times and number of cycles, are evaluated an optimized on a PlasmaPro 300 Cobra DRIE tool from Oxford Plasma Technology.

  12. Morphological evaluation of new total etching and self etching adhesive system interfaces with dentin

    PubMed Central

    Hegde, Mithra N; Hegde, Priyadarshini; Chandra, C Ravi

    2012-01-01

    Aim: The purpose of this study is to evaluate the resin-dentin interface, quality of the hybrid layer of total-etching and self-etching adhesive systems under scanning electron microscopy (SEM). Materials and Methods: Class V cavities were prepared in 40 extracted human molars. In Group I XP bond (Dentsply), in Group II Adper Single Bond II (3M ESPE), in Group III Adper Easy One (3M ESPE), and in Group IV Xeno V (Dentsply) were applied. Teeth were restored with resin composite, subjected to thermocycling, and sectioned in Buccolingual plane. The samples were demineralized using 6N HCl, for 30 sec, and deproteinized with 2.5% NaOCl for 10 min, gold sputtered, and viewed using a scanning electron microscope. Results: Among the total-etch systems used, the XP Bond showed a clear, thick hybrid layer, with long resin tags and few voids. Among the self-etch adhesive systems, the Xeno V did not show a clearly recognizable hybrid layer, but there were no voids and continuous adaptation was seen with the dentin. Conclusion: The adaptation of self-etch adhesives to the resin-dentin interface was good without voids or separation of phases; showing a thin, continuous hybrid layer. PMID:22557814

  13. HF-based etching processes for improving laser damage resistance of fused silica optical surfaces

    SciTech Connect

    Suratwala, T I; Miller, P E; Bude, J D; Steele, R A; Shen, N; Monticelli, M V; Feit, M D; Laurence, T A; Norton, M A; Carr, C W; Wong, L L

    2010-02-23

    The effect of various HF-based etching processes on the laser damage resistance of scratched fused silica surfaces has been investigated. Conventionally polished and subsequently scratched fused silica plates were treated by submerging in various HF-based etchants (HF or NH{sub 4}F:HF at various ratios and concentrations) under different process conditions (e.g., agitation frequencies, etch times, rinse conditions, and environmental cleanliness). Subsequently, the laser damage resistance (at 351 or 355 nm) of the treated surface was measured. The laser damage resistance was found to be strongly process dependent and scaled inversely with scratch width. The etching process was optimized to remove or prevent the presence of identified precursors (chemical impurities, fracture surfaces, and silica-based redeposit) known to lead to laser damage initiation. The redeposit precursor was reduced (and hence the damage threshold was increased) by: (1) increasing the SiF{sub 6}{sup 2-} solubility through reduction in the NH4F concentration and impurity cation impurities, and (2) improving the mass transport of reaction product (SiF{sub 6}{sup 2-}) (using high frequency ultrasonic agitation and excessive spray rinsing) away from the etched surface. A 2D finite element crack-etching and rinsing mass transport model (incorporating diffusion and advection) was used to predict reaction product concentration. The predictions are consistent with the experimentally observed process trends. The laser damage thresholds also increased with etched amount (up to {approx}30 {micro}m), which has been attributed to: (1) etching through lateral cracks where there is poor acid penetration, and (2) increasing the crack opening resulting in increased mass transport rates. With the optimized etch process, laser damage resistance increased dramatically; the average threshold fluence for damage initiation for 30 {micro}m wide scratches increased from 7 to 41 J/cm{sup 2}, and the statistical

  14. Polymorph-dependent titanium dioxide nanoparticle dissolution in acidic and alkali digestions

    EPA Science Inventory

    Multiple polymorphs (anatase, brookite and rutile) of titanium dioxide nanoparticles (TiO2-NPs) with variable structures were quantified in environmental matrices via microwave-based hydrofluoric (HF) and nitric (HNO3) mixed acid digestion and muffle furnace (MF)-based potassium ...

  15. ICP etching of silicon for micro and nanoscale devices

    NASA Astrophysics Data System (ADS)

    Henry, Michael David

    The physical structuring of silicon is one of the cornerstones of modern microelectronics and integrated circuits. Typical structuring of silicon requires generating a plasma to chemically or physically etch silicon. Although many tools have been created to do this, the most finely honed tool is the Inductively Couple Plasma Reactive Ion Etcher. This tool has the ability to finesse structures from silicon unachievable on other machines. Extracting structures such as high aspect ratio silicon nanowires requires more than just this tool, however. It requires etch masks which can adequately protect the silicon without interacting with the etching plasma and highly tuned etch chemistry able to protect the silicon structures during the etching process. In the work presented here, three highly tuned etches for silicon, and its oxide, will be described in detail. The etches presented utilize a type of etch chemistry which provides passivation while simultaneously etching, thus permitting silicon structures previously unattainable. To cover the range of applications, one etch is tuned for deep reactive ion etching of high aspect ratio micro-structures in silicon, while another is tuned for high aspect ratio nanoscale structures. The third etch described is tuned for creating structures in silicon dioxide. Following the description of these etches, two etch masks for silicon will be described. The first mask will detail a highly selective etch mask uniquely capable of protecting silicon for both etches described while being compatible with mainstream semiconductor fabrication facilities. This mask is aluminum oxide. The second mask detailed permits for a completely dry lithography on the micro and nanoscale, FIB implanted Ga etch masks. The third chapter will describe the fabrication and in situ electrical testing of silicon nanowires and nanopillars created using the methods previously described. A unique method for contacting these nanowires is also described which has

  16. Influence of etching time on bond strength in dentin irradiated with erbium lasers.

    PubMed

    Ferreira, Leila Soares; Apel, Christian; Francci, Carlos; Simoes, Alyne; Eduardo, Carlos P; Gutknecht, Norbert

    2010-11-01

    The purpose of this in vitro study was to evaluate the effect of etching time on the tensile bond strength (TBS) of a conventional adhesive bonded to dentin previously irradiated with erbium:yttrium-aluminum-garnet (Er:YAG) and erbium, chromium:yttrium-scandium-gallium-garnet (Er,Cr:YSGG) lasers. Buccal and lingual surfaces of 45 third molars were flattened until the dentin was exposed and randomly assigned to three groups (n = 30) according to the dentin treatment: control (not irradiated), irradiated with Er:YAG (1 W; 250 mJ; 4 Hz; 80.6 J/cm(2)) laser or Er,Cr:YSGG (4 W; 200 mJ; 20 Hz; 71.4 J/cm(2)) laser, and into three subgroups (n = 10) according to acid etching time (15 s, 30 s or 60 s) for each experimental group. After acid etching, the adhesive was applied, followed by the construction of an inverted cone of composite resin. The samples were immersed in distilled water (37 degrees C for 24 h) and subjected to TBS test [50 kilogram-force (kgf), 0.5 mm/min]. Data were analyzed by analysis of variance (ANOVA) and Tukey statistical tests (P < or = 0.05). Control group samples presented significant higher TBS values than those of all lased groups. Both irradiated groups exhibited similar TBS values. Samples subjected to the different etching times in each experimental group presented similar TBS. Based on the conditions of this in vitro study we concluded that Er:YAG and Er,Cr:YSGG laser irradiation of the dentin weakens the bond strength of the adhesive. Moreover, increased etching time is not able to modify the bonding strength of the adhesive to irradiated dentin.

  17. Comparison of the shear bond strength of 2 self-etch primer/adhesive systems.

    PubMed

    Bishara, Samir E; Oonsombat, Charuphan; Ajlouni, Raed; Laffoon, John F

    2004-03-01

    Conventional adhesive systems use 3 different agents-an enamel conditioner, a primer solution, and an adhesive resin for bonding orthodontic brackets to enamel. A unique characteristic of some new bonding systems in operative dentistry is that they combine the conditioning and priming agents into a single application. Combining conditioning and priming saves time and should be more cost-effective to the clinician and indirectly to the patient. The purpose of this study was to assess and compare the effects of mix and no-mix self-etch primers/bonding systems on the shear bond strengths of orthodontic brackets. The brackets were bonded to extracted human molars according to the following protocols. In group I, a self-etch acidic primer/adhesive system, Transbond Plus (3M Unitek, Monrovia, Calif), was applied on the enamel surface as suggested by the manufacturer; it has 2 components that must be mixed before use. The brackets were then bonded with Transbond XT and light-cured for 20 seconds. In group II, a no-mix self-etch bracket adhesive system, Ideal 1 (GAG International, Islandia, NY), was applied to the teeth as suggested by the manufacturer. The self-etch primer has 1 component that does not need to be mixed before use. The brackets were then bonded with the adhesive and light-cured for 20 seconds. The in vitro findings indicated that the shear bond strength comparisons (t = 0.681) of the 2 adhesive systems were not significantly different (P =.501). The mean shear bond strength of the 2-component acid etch primer was 5.9 +/- 2.7 MPa, and the mean for the 1-component system was 6.6 +/- 3.2 MPa. The clinician should consider the bond strength and the ease of application of the various components of the bracket bonding systems available on the market.

  18. Comparison of shear bond strength of two self-etch primer/adhesive systems.

    PubMed

    Bishara, Samir E; Ajlouni, Raed; Laffoon, John F; Warren, John J

    2006-01-01

    Orthodontic brackets adhesive systems use three different agents, an enamel conditioner, a primer solution, and an adhesive resin. A unique characteristic of some new bonding systems is that they combine the conditioning, priming, and adhesive agents into a single application. The purpose of this study was to assess and compare the effects of using one-step and two-step self-etch primer/adhesive systems on the shear bond strength of orthodontic brackets. The brackets were bonded to extracted human molars according to one of two protocols. Group I (control): a two-step self-etch acidic primer/adhesive system was used, Transbond Plus was applied to the enamel surface as suggested by the manufacturer. The brackets were bonded with Transbond XT and light cured for 20 seconds. Group II: a one-step self-etch, self-adhesive resin cement system, Maxcem, was applied directly to the bracket. The self-etch primer/adhesive is made of two components that mix automatically during application. The brackets were then light cured for 20 seconds. The mean shear bond strength of the two-step acid-etch primer/adhesive was 5.9 +/- 2.7 Mpa and the mean for the one-step system was 3.1 +/- 1.7 MPa. The in vitro findings of this study indicated that the shear bond strengths (t = 3.79) of the two adhesive systems were significantly different (P = .001). One-step adhesive systems could potentially be advantageous for orthodontic purposes if their bond strength can be improved.

  19. Anisotropic Ta{sub 2}O{sub 5} waveguide etching using inductively coupled plasma etching

    SciTech Connect

    Muttalib, Muhammad Firdaus A. Chen, Ruiqi Y.; Pearce, Stuart J.; Charlton, Martin D. B.

    2014-07-01

    Smooth and vertical sidewall profiles are required to create low loss rib and ridge waveguides for integrated optical device and solid state laser applications. In this work, inductively coupled plasma (ICP) etching processes are developed to produce high quality low loss tantalum pentoxide (Ta{sub 2}O{sub 5}) waveguides. A mixture of C{sub 4}F{sub 8} and O{sub 2} gas are used in combination with chromium (Cr) hard mask for this purpose. In this paper, the authors make a detailed investigation of the etch process parameter window. Effects of process parameters such as ICP power, platen power, gas flow, and chamber pressure on etch rate and sidewall slope angle are investigated. Chamber pressure is found to be a particularly important factor, which can be used to tune the sidewall slope angle and so prevent undercut.

  20. Incorporation of stratospheric acids into water ice

    NASA Technical Reports Server (NTRS)

    Elliott, Scott; Turco, Richard P.; Toon, Owen B.; Hamill, Patrick

    1990-01-01

    Hydrochloric and hydrofluoric acids are absorbed within the water ice lattice at mole fractions maximizing below 0.00001 and 0.0001 in a variety of solid impurity studies. The absorption mechanism may be substitutional or interstitial, leading in either case to a weak permeation of stratospheric ices by the acids at equilibrium. Impurities could also inhabit grain boundaries, and the acid content of atmospheric ice crystals will then depend on details of their surface and internal microstructures. Limited evidence indicates similar properties for the absorption of HNO3. Water ice lattices saturated with acid cannot be a significant local reservoir for HCl in the polar stratosphere.

  1. [Restoration of composite on etched stainless steel crowns. (1)].

    PubMed

    Goto, G; Zang, Y; Hosoya, Y

    1990-01-01

    Object of investigation The retention of composite resin to etched stainless steel crowns was tested as a possible method for restoring primary anterior teeth. Method employed 1) SEM observation Stainless steel crowns (Sankin Manufacture Co.) were etched with an aqua resia to create surface roughness and undercut to retain the composite resin to the crowns. Etching times were 1, 2, 3, 5, 8, 10 and 20 minutes, then washed in a 70% alcohol solution using an ultrasonic washer and dried. A total of 96 etched samples and non etched control samples were observed through the scanning electron microscope (Hitachi 520). 2) Shear bond strength test Stainless steel crowns were etched in an aqua resia from 1 to 20 minutes, then washed and dried. Composite resin (Photo Clearfil A, Kuraray Co.) with the bonding agent was placed on the crowns and the shear bond strength was tested in 56 samples using an Autograph (DCS-500, Shimazu). Results 1) SEM observation showed that the etching surface of stainless steel crowns created surface roughness and undercut. The most desirable surface was obtained in the 3 to 5 minute etching time specimens. 2) The highest bond strength was obtained in a 3 minute etching specimen. It was 42.12 MPa, although 29.26 MPa in mean value. Conclusion Etching with an aqua resia increased the adherence of composite resin to the surface of stainless steel crowns.

  2. Anisotropic etching of silicon in solutions containing tensioactive compounds

    NASA Astrophysics Data System (ADS)

    Zubel, Irena

    2016-12-01

    The results of investigations concerning anisotropic etching in 3M KOH and 25% TMAH solutions modified by tensioactive compounds such as alcohols, diols and a typical surfactant Triton X100 have been compared. Etching anisotropy was assessed on the basis of etch rates ratio V(110)/V(100). It was stated that the relation between surface tension of the solutions and etch rates of particular planes depend not only on the kind of surfactant but also on the kind of etching solution (KOH, TMAH). It points out an important role of TMA+ ions in the etching process, probably in the process of forming an adsorption layer, consisting of the molecules of tensioactive compounds on Si surface, which decides about etch rate. We have observed that this phenomenon occurs only at high concentration of TMA+ ions (25% TMAH). Reduction of TMAH concentration changes the properties of surfactant containing TMAH solutions. From all investigated solutions, the solutions that assured developing of (110) plane inclined at the angle of 45° to (100) substrate were selected. Such planes can be used as micromirrors in MOEMS structures. The solutions provide the etch rate ratio V(110)/V(100)<0.7, thus they were selected from hydroxide solutions containing surfactants. A simple way for etch rate anisotropy V(110)/V(100) assessment based on microscopic images etched structures has been proposed.

  3. Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes

    NASA Astrophysics Data System (ADS)

    Chaghi, R.; Cervera, C.; Aït-Kaci, H.; Grech, P.; Rodriguez, J. B.; Christol, P.

    2009-06-01

    In this paper, we studied wet chemical etching fabrication of the InAs/GaSb superlattice mesa photodiode for the mid-infrared region. The details of the wet chemical etchants used for the device process are presented. The etching solution is based on orthophosphoric acid (H3PO4), citric acid (C6H8O7) and H2O2, followed by chemical polishing with the sodium hypochlorite (NaClO) solution and protection with photoresist polymerized. The photodiode performance is evaluated by current-voltage measurements. The zero-bias resistance area product R0A above 4 × 105 Ω cm2 at 77 K is reported. The device did not show dark current degradation at 77 K after exposition during 3 weeks to the ambient air.

  4. An Effective Acid Combination for Enhanced Properties and Corrosion Control of Acidizing Sandstone Formation

    NASA Astrophysics Data System (ADS)

    Umer Shafiq, Mian; Khaled Ben Mahmud, Hisham

    2016-03-01

    To fulfill the demand of the world energy, more technologies to enhance the recovery of oil production are being developed. Sandstone acidizing has been introduced and it acts as one of the important means to increase oil and gas production. Sandstone acidizing operation generally uses acids, which create or enlarge the flow channels of formation around the wellbore. In sandstone matrix acidizing, acids are injected into the formation at a pressure below the formation fracturing pressure, in which the injected acids react with mineral particles that may restrict the flow of hydrocarbons. Most common combination is Hydrofluoric Acid - Hydrochloric with concentration (3% HF - 12% HCl) known as mud acid. But there are some problems associated with the use of mud acid i.e., corrosion, precipitation. In this paper several new combinations of acids were experimentally screened to identify the most effective combination. The combinations used consist of fluoboric, phosphoric, formic and hydrofluoric acids. Cores were allowed to react with these combinations and results are compared with the mud acid. The parameters, which are analyzed, are Improved Permeability Ratio, strength and mineralogy. The analysis showed that the new acid combination has the potential to be used in sandstone acidizing.

  5. Influence of microhybrid resin and etching times on bleached enamel for the bonding of ceramic brackets.

    PubMed

    Firoozmand, Leily Macedo; Brandão, Juliana Viana Pereira; Fialho, Melissa Proença Nogueira

    2013-01-01

    The aim of this study was to evaluate the shear bond strength (SBS) of polycrystalline ceramic brackets (PCB) bonded after bleaching treatment using different composite resins and enamel etching times. A total of 144 bovine incisors were randomly divided into two study groups (n = 72, each) as follows: G1, enamel bleached with 35% hydrogen peroxide, and G2 (control group), enamel unbleached. After the bleaching treatment, the samples were stored in artificial saliva for 14 days. These groups were further divided into two subgroups (n = 36, each) as follows: GA, brackets bonded with Transbond XT (3M) and GB, brackets bonded with Filtek Z250 (3M). For each resin used, three different etching times with 37% phosphoric acid (15, 30 and 60 seconds) were tested. SBS tests were performed using a universal testing machine (EMIC), and the adhesive remnant index (ARI) score was verified. Significant differences among the three experimental conditions and interactions between the groups were observed. The type of composite resin accounted for 24% of the influence on the bond strength, whereas the etching time and bleaching treatment accounted for 14.5% and 10% of the influence on bond strength, respectively. The ARI revealed that the most common area of adhesion failure was at the composite resin-bracket interface. The type of composite resin, etching time and external bleaching significantly influenced the SBS of PCB on enamel, even after 14 days of saliva storage.

  6. Chemical etching and EDAX analysis of beryllium-free nickel-chromium ceramo-metal alloy.

    PubMed

    Atta, O M; Mosleh, I E; Shehata, M T

    1995-10-01

    A chemical etching technique is described for producing etch patterns in beryllium-free nickel chromium ceramo-metal alloy. Disc-shaped samples were chemically etched, evaluated with SEM and analysed by the EDAX technique. Scanning electron micrographs revealed, profound retentive cavities. The EDAX analysis provided a comprehensive interpretation of the etch mechanism. The obtained results show that the developed chemical etching has the potential to produce a highly retentive etched surface with less problematic and less technique sensitive than electrolytic etching.

  7. Extreme ultraviolet lithography mask etch study and overview

    NASA Astrophysics Data System (ADS)

    Wu, Banqiu; Kumar, Ajay; Chandrachood, Madhavi; Sabharwal, Amitabh

    2013-04-01

    An overview of extreme ultraviolet lithography (EUVL) mask etch is presented and a EUVL mask etch study was carried out. Today, EUVL implementation has three critical challenges that hinder its adoption: extreme ultraviolet (EUV) source power, resist resolution-line width roughness-sensitivity, and a qualified EUVL mask. The EUVL mask defect challenges result from defects generated during blank preparation, absorber and multilayer deposition processes, as well as patterning, etching and wet clean processes. Stringent control on several performance criteria including critical dimension (CD) uniformity, etch bias, micro-loading, profile control, defect control, and high etch selectivity requirement to capping layer is required during the resist pattern duplication on the underlying absorber layer. EUVL mask absorbers comprise of mainly tantalum-based materials rather than chrome- or MoSi-based materials used in standard optical masks. Compared to the conventional chrome-based absorbers and phase shift materials, tantalum-based absorbers need high ion energy to obtain moderate etch rates. However, high ion energy may lower resist selectivity, and could introduce defects. Current EUVL mask consists of an anti-reflective layer on top of the bulk absorber. Recent studies indicate that a native oxide layer would suffice as an anti-reflective coating layer during the electron beam inspection. The absorber thickness and the material properties are optimized based on optical density targets for the mask as well as electromagnetic field effects and optics requirements of the patterning tools. EUVL mask etch processes are modified according to the structure of the absorber, its material, and thickness. However, etch product volatility is the fundamental requirement. Overlapping lithographic exposure near chip border may require etching through the multilayer, resulting in challenges in profile control and etch selectivity. Optical proximity correction is applied to further

  8. Experiment and Results on Plasma Etching of SRF cavities

    SciTech Connect

    Upadhyay, Janardan; Im, Do; Peshl, J.; Vuskovic, Leposova; Popovic, Svetozar; Valente, Anne-Marie; Phillips, H. Lawrence

    2015-09-01

    The inner surfaces of SRF cavities are currently chemically treated (etched or electropolished) to achieve the state of the art RF performance. We designed an apparatus and developed a method for plasma etching of the inner surface for SRF cavities. The process parameters (pressure, power, gas concentration, diameter and shape of the inner electrode, temperature and positive dc bias at inner electrode) are optimized for cylindrical geometry. The etch rate non-uniformity has been overcome by simultaneous translation of the gas point-of-entry and the inner electrode during the processing. A single cell SRF cavity has been centrifugally barrel polished, chemically etched and RF tested to establish a baseline performance. This cavity is plasma etched and RF tested afterwards. The effect of plasma etching on the RF performance of this cavity will be presented and discussed.

  9. Adhesive dentistry: the development of immediate dentin sealing/selective etching bonding technique.

    PubMed

    Helvey, Gregg A

    2011-01-01

    A major objective of dental research over the past 60 years has been a search for the "dream-team" of dental adhesives. In fact, a recent Medline search produced more than 6,500 papers on dentin bonding and its techniques. Adhesive systems are designed to retain direct and indirect restorations, minimize leakage at the margin, and be simple to place while producing consistent results. The development of materials and techniques has an interesting history; some have recirculated from the past and are being used in some form today. Buonocore used the etchant phosphoric acid at the beginning of the adhesive revolution. Though not accepted for many years it eventually became the "gold standard" for etching enamel. Technique sensitivity moved it out of favor and, through the development of self-etching acidic primers, was eliminated from some adhesive systems. Although these primers may have successfully addressed postoperative sensitivity, adhesion was compromised. The bond strength of these systems has now been improved with the incorporation of phosphoric acid-etch to condition enamel prior to using the adhesive system. This article will trace the history of adhesive techniques and materials and how it has led to the creation of a new technique that combines two bonding methods.

  10. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  11. Etched-multilayer phase shifting masks for EUV lithography

    DOEpatents

    Chapman, Henry N.; Taylor, John S.

    2005-04-05

    A method is disclosed for the implementation of phase shifting masks for EUV lithography. The method involves directly etching material away from the multilayer coating of the mask, to cause a refractive phase shift in the mask. By etching into the multilayer (for example, by reactive ion etching), rather than depositing extra material on the top of the multilayer, there will be minimal absorption loss associated with the phase shift.

  12. Capillary flow in sacrificially etched nanochannels

    PubMed Central

    Hamblin, Mark N.; Hawkins, Aaron R.; Murray, Dallin; Maynes, Daniel; Lee, Milton L.; Woolley, Adam T.; Tolley, H. Dennis

    2011-01-01

    Planar nanochannels are fabricated using sacrificial etching technology with sacrificial cores consisting of aluminum, chromium, and germanium, with heights ranging from 18 to 98 nm. Transient filling via capillary action is compared against the Washburn equation [E. W. Washburn, Phys. Rev. 17, 273 (1921)], showing experimental filling speeds significantly lower than classical continuum theory predicts. Departure from theory is expressed in terms of a varying dynamic contact angle, reaching values as high as 83° in channels with heights of 18 nm. The dynamic contact angle varies significantly from the macroscopic contact angle and increases with decreasing channel dimensions. PMID:21772934

  13. Capillary flow in sacrificially etched nanochannels.

    PubMed

    Hamblin, Mark N; Hawkins, Aaron R; Murray, Dallin; Maynes, Daniel; Lee, Milton L; Woolley, Adam T; Tolley, H Dennis

    2011-06-01

    Planar nanochannels are fabricated using sacrificial etching technology with sacrificial cores consisting of aluminum, chromium, and germanium, with heights ranging from 18 to 98 nm. Transient filling via capillary action is compared against the Washburn equation [E. W. Washburn, Phys. Rev. 17, 273 (1921)], showing experimental filling speeds significantly lower than classical continuum theory predicts. Departure from theory is expressed in terms of a varying dynamic contact angle, reaching values as high as 83° in channels with heights of 18 nm. The dynamic contact angle varies significantly from the macroscopic contact angle and increases with decreasing channel dimensions.

  14. Anisotropic etching of Al by a directed Cl2 flux

    NASA Technical Reports Server (NTRS)

    Efremow, N. N.; Geis, M. W.; Mountain, R. W.; Lincoln, G. A.; Randall, J. N.

    1986-01-01

    A new Al etching technique is described that uses an ion beam from a Kaufman ion source and a directed Cl2 flux. The ion beam is used primarily to remove the native oxide and to allow the Cl2 to spontaneously react with the Al film forming volatile Al2Cl6. By controlling both the flux equivalent pressure of Cl2 and the ion beam current, this etching technique makes possible the anisotropic etching of Al with etch rates from 100 nm/min to nearly 10 microns/min with a high degree of selectivity.

  15. Resonantly enhanced selective photochemical etching of GaN

    NASA Astrophysics Data System (ADS)

    Trichas, E.; Kayambaki, M.; Iliopoulos, E.; Pelekanos, N. T.; Savvidis, P. G.

    2009-04-01

    Wavelength dependent photochemical etching of GaN films reveals a strong resonant enhancement of the photocurrent at the GaN gap, in close agreement with the excitonic absorption profile of GaN. The corresponding etching rate of GaN strongly correlates with the measured photocurrent. No photocurrent, nor etching is observed for AlGaN films under same excitation conditions. The method could pave the way to the development of truly selective etching of GaN on AlGaN for the fabrication of nitride based optoelectronic devices.

  16. Lateral electrochemical etching of III-nitride materials for microfabrication

    DOEpatents

    Han, Jung

    2017-02-28

    Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

  17. Fe-catalyzed etching of exfoliated graphite through carbon hydrogenation

    PubMed Central

    Cheng, Guangjun; Calizo, Irene; Hacker, Christina A.; Richter, Curt A.; Hight Walker, Angela R.

    2016-01-01

    We present an investigation on Fe-catalyzed etching of graphite by dewetting Fe thin films on graphite in forming gas. Raman mapping of the etched graphite shows thickness variation in the etched channels and reveals that the edges are predominately terminated in zigzag configuration. X-ray diffraction and photoelectron spectroscopy measurements identify that the catalytic particles are Fe with the presence of iron carbide and iron oxides. The existence of iron carbide indicates that, in additional to carbon hydrogenation, carbon dissolution into Fe is also involved during etching. Furthermore, the catalytic particles can be re-activated upon a second annealing in forming gas. PMID:27840449

  18. Influence of erbium, chromium-doped: Yttrium scandium-gallium-garnet laser etching and traditional etching systems on depth of resin penetration in enamel: A confocal laser scanning electron microscope study

    PubMed Central

    Vijayan, Vishal; Rajasigamani, K.; Karthik, K.; Maroli, Sasidharan; Chakkarayan, Jitesh; Haris, Mohamed

    2015-01-01

    Objective: This study was performed to assess the resin tag length penetration in enamel surface after bonding of brackets to identify which system was most efficient. Methodology: Our study was based on a more robust confocal microscopy for visualizing the resin tags in enamel. Totally, 100 extracted human first and second premolars have been selected for this study and were randomly divided into ten groups of 10 teeth each. In Group 1, the buccal enamel surface was etched with 37% phosphoric acid (3M ESPE), Group 2 with 37% phosphoric (Ultradent). In Groups 5, 6, and 7, erbium, chromium-doped: Yttrium scandium-gallium-garnet (Er, Cr: YSGG) laser (Biolase) was used for etching the using following specifications: Group 5 (1.5 W/20 Hz, 15 s), Group 6 (2 W/10 Hz, 15 s), and Group 7 (2 W/20 Hz, 15 s). In Groups 8, 9, and 10, Er, Cr: YSGG laser (Biolase) using same specifications and additional to this step, conventional etching on the buccal enamel surface was etched with 37% (3M ESPE) after laser etching. In Groups 1, 5, 6, 7, 8, 9, and 10 3M Unitek Transbond XT primer was mixed with Rhodamine B dye (Sigma-Aldrich, Germany) to etched surface and then cured for 20 s. In Group 2, Ultradents bonding agent was mixed with Rhodamine B. In Group 3, 3M Unitek Transbond PLUS, Monrovia, USA, which was mixed with Rhodamine B dye (Sigma-Aldrich, Germany). Group 4, with self-etching primer (Ultradent-Peak SE, USA) was mixed with Rhodamine B dye (Sigma-Aldrich, Germany). Later (3M Unitek, Transbond XT, Monrovia USA) [Figure 1] was used to bond the modified Begg brackets (T. P. Orthodontics) in Groups 1, 3, 5, 6, 7, 8, 9, and 10. In Groups 2, 4 Ultradent-Peak LC Bond was used to bond the modified brackets. After curing brackets were debonded, and enamel depth penetration was assessed using confocal laser scanning microscope. Results: Group J had a mean maximum depth of penetration of 100.876 μm, and Group D was the least having a maximum value of 44.254 μm. Conclusions: Laser

  19. Photoresist 3D profile related etch process simulation and its application to full chip etch compact modeling

    NASA Astrophysics Data System (ADS)

    Wu, Cheng-En; Yang, Wayne; Luan, Lan; Song, Hua

    2015-03-01

    The optical proximity correction (OPC) model and post-OPC verification that takes the developed photoresist (PR) 3D profile into account is needed in the advanced 2Xnm node. The etch process hotspots caused by poor resist profile may not be fully identified during the lithography inspection but will only be observed after the subsequent etch process. A complete mask correction that targets to final etch CD requires not only a lithography R3D profile model but also a etch process compact model. The drawback of existing etch model is to treat the etch CD bias as a function of visibility and pattern density which do not contain the information of resist profile. One important factor to affect the etch CD is the PR lateral erosion during the etch process due to non-vertical PR side wall angle (SWA) and anisotropy of etch plasma source. A simple example is in transferring patterns from PR layer to thin hard mask (HM) layer, which is frequently used in the double pattern (DPT) process. The PR lateral erosion contributes an extra HM etch CD bias which is deviated from PR CD defined by lithography process. This CD bias is found to have a nontrivial dependency on the PR profile and cannot be described by the pattern density or visibility. In this report, we study the etch CD variation to resist SWA under various etch conditions. Physical effects during etch process such as plasma ion reflection and source anisotropy, which modify the local etch rate, are taken into considerations in simulation. The virtual data are generated by Synopsys TCAD tool Sentaurus Topography 3D using Monte Carlo engine. A simple geometry compact model is applied first to explain the behavior of virtual data, however, it works to some extent but lacks accuracy when plasma ion reflection comes into play. A modified version is proposed, for the first time, by including the effects of plasma ion reflection and source anisotropy. The new compact model fits the nonlinear etch CD bias very well for a wide

  20. The wettability between etching solutions and the surface of multicrystalline silicon wafer during metal-assisted chemical etching process

    NASA Astrophysics Data System (ADS)

    Niu, Y. C.; Liu, Z.; Liu, X. J.; Gao, Y.; Lin, W. L.; Liu, H. T.; Jiang, Y. S.; Ren, X. K.

    2017-01-01

    In order to investigate the wettability of multicrystalline silicon (mc-Si) with the etching solutions during metal-assisted chemical etching process, different surface structures were fabricated on the p-type multi-wire slurry sawn mc-Si wafers, such as as-cut wafers, polished wafers, and wafers etched in different solutions. The contact angles of different etching solutions on the surfaces of the wafers were measured. It was noted that all contact angles of etching solutions were smaller than the corresponding ones of deionized water, but the contact angles of different etching solutions were quite different. Among the contact angles of the etching solutions of AgNO3-HF, H2O2-HF, TMAH and HNO3-HF, the contact angle of TMAH solution was much larger than the others and that of HNO3-HF solution was much smaller. It is suggested that the larger contact angle may lead to an unevenly etching of silicon wafer due to the long retention of big bubbles on the wafers in the etching reaction, which should be paid attention to and overcome.

  1. Restoration interface microleakage using one total-etch and three self-etch adhesives.

    PubMed

    Deliperi, S; Bardwell, D N; Wegley, C

    2007-01-01

    This study evaluated the efficacy of a total-etch and three self-etch adhesives in reducing microleakage after three months water storage and thermocycling. Thirty freshly extracted caries-free human premolars and molars were used. Class V standardized preparations were performed on the facial and lingual surfaces, with the gingival margin placed 1 mm below the CEJ. The teeth were randomly divided into four groups; Group I: Xeno III one-step self-etch adhesive (Dentsply/Caulk), Group II: Prime & Bond NT total-etch adhesive (Dentsply/Caulk), Group III: i-Bond one-step self-etch adhesive (Heraeus Kulzer) and Group IV: Clearfil SE Bond two-step self-etch adhesive (Kuraray Medical). The teeth were restored using 2 mm increments of shade A2 resin composite (Esthet-X, Dentsply/Caulk). Each layer was cured using the Spectrum 800 curing light (Dentsply/Caulk) for 20 seconds at 600mW/cm2. The teeth were stored in distilled water for 90 days. Samples were thermocycled 500x between 5 degrees C and 55 degrees C with a dwell time of 30 seconds, then placed in a 0.5% methylene blue dye solution for 24 hours at 37 degrees C. Samples were sectioned longitudinally and evaluated for microleakage at the occlusal and gingival margins under a stereomicroscope at 20x magnification. Dye penetration was scored: 0 = no penetration; 1 = partial dye penetration along the occlusal or gingival wall; 2 = dye penetration along the occlusal or gingival wall; 3 = dye penetration to and along the axial wall. A Mann-Whitney test was used to demonstrate significantly more dye penetration in Group III than in the other groups at both the occlusal and gingival scores (p < 0.0001). When comparing the occlusal and gingival scores for each group, the Wilcoxon Rank test showed no significant difference in dye penetration for Xeno III (p > 0.05), Prime & Bond NT (p = 0.059) and I Bond (p = 0.083), and Clearfil SE Bond yielded more dye penetration at the occlusal than at the gingival wall (p = 0.001).

  2. Metal-assisted chemical etching of silicon: a review.

    PubMed

    Huang, Zhipeng; Geyer, Nadine; Werner, Peter; de Boor, Johannes; Gösele, Ulrich

    2011-01-11

    This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching. First, the basic process and mechanism of metal-assisted chemical etching is introduced. Then, the various influences of the noble metal, the etchant, temperature, illumination, and intrinsic properties of the silicon substrate (e.g., orientation, doping type, doping level) are presented. The anisotropic and the isotropic etching behaviors of silicon under various conditions are presented. Template-based metal-assisted chemical etching methods are introduced, including templates based on nanosphere lithography, anodic aluminum oxide masks, interference lithography, and block-copolymer masks. The metal-assisted chemical etching of other semiconductors is also introduced. A brief introduction to the application of Si nanostructures obtained by metal-assisted chemical etching is given, demonstrating the promising potential applications of metal-assisted chemical etching. Finally, some open questions in the understanding of metal-assisted chemical etching are compiled.

  3. Evaluation of bond strength of orthodontic brackets without enamel etching

    PubMed Central

    Boruziniat, Alireza; Motaghi, Shiva; Moghaddas, Mohmmadjavad

    2015-01-01

    Background To compare the shear bond strength of brackets with and without enamel etching. Material and Methods In this study, 60 sound premolars were randomly divided into four different groups: 1- TXE group: Enamel etching+Transbond XT adhesive+ Transbond XT composite. 2- TXS group: Transbond plus self-etch adhesive+ Transbond XT composite. 3- PQ1E group: Enamel etching+ PQ1 adhesive+ Transbond XT composite. 4- PQ1 group: PQ1 adhesive+ Transbond XT composite. The shear bond strengths of brackets were evaluated using universal testing machine at cross head speed of 0.5 mm/min. The Adhesive Remnant Index (ARI) was also measured. One-way ANOVA, Tukey’s post hoc, Kruskal-wallis and Mann-Witney U test were used for data analysis. Results There was a significant difference between etched and unetched groups respect to SBS and ARI (p<0.05), however; no significant difference was observed between unetched group and self-etch adhesive group (p>> 0.05). The shear bond strength of PQ1 group was the least but in acceptable range and its ARI was less than other groups. Conclusions PQ1 adhesive can be used for bracket bonding without enamel etching with adequate bond strength and minimal ARI. Key words:Bracket, shear bond strength, filled-adhesive, self-etch adhesive. PMID:26535100

  4. Laser etching: A new technology to identify Florida grapefruit

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Laser labeling of fruits and vegetables is an alternative means to label produce. Low energy CO2 laser beam etches the surface showing the contrasting underlying layer. These etched surfaces can promote water loss and potentially allowing for pathogen entry. The long term effects of laser labeling o...

  5. Reactive ion etching of quartz and Pyrex for microelectronic applications

    NASA Astrophysics Data System (ADS)

    Zeze, D. A.; Forrest, R. D.; Carey, J. D.; Cox, D. C.; Robertson, I. D.; Weiss, B. L.; Silva, S. R. P.

    2002-10-01

    The reactive ion etching of quartz and Pyrex substrates was carried out using CF4/Ar and CF4/O2 gas mixtures in a combined radio frequency (rf)/microwave (μw) plasma. It was observed that the etch rate and the surface morphology of the etched regions depended on the gas mixture (CF4/Ar or CF4/O2), the relative concentration of CF4 in the gas mixture, the rf power (and the associated self-induced bias) and microwave power. An etch rate of 95 nm/min for quartz was achieved. For samples covered with a thin metal layer, ex situ high resolution scanning electron microscopy and atomic force microscopy imaging indicated that, during etching, surface roughness is produced on the surface beneath the thin metallic mask. Near vertical sidewalls with a taper angle greater than 80° and smooth etched surfaces at the nanometric scale were fabricated by carefully controlling the etching parameters and the masking technique. A simulation of the electrostatic field distribution was carried out to understand the etching process using these masks for the fabrication of high definition features.

  6. Feasibility of atomic layer etching of polymer material based on sequential O{sub 2} exposure and Ar low-pressure plasma-etching

    SciTech Connect

    Vogli, Evelina; Metzler, Dominik; Oehrlein, Gottlieb S.

    2013-06-24

    We describe controlled, self-limited etching of a polystyrene polymer using a composite etching cycle consisting of sequential deposition of a thin reactive layer from precursors produced from a polymer-coated electrode within the etching chamber, modification using O{sub 2} exposure, and subsequent low-pressure Ar plasma etching, which removes the oxygen-modified deposited reactive layer along with Almost-Equal-To 0.1 nm unmodified polymer. Deposition prevents net etching of the unmodified polymer during the etching step and enables self-limited etch rates of 0.1 nm/cycle.

  7. Reactive ion etching (RIE) technique for application in crystalline silicon solar cells

    SciTech Connect

    Yoo, Jinsu

    2010-04-15

    Saw damage removal (SDR) and texturing by conventional wet chemical processes with alkali solution etch about 20 micron of silicon wafer on both sides, resulting in thin wafers with which solar cell processing is difficult. Reactive ion etching (RIE) for silicon surface texturing is very effective in reducing surface reflectance of thin crystalline silicon wafers by trapping the light of longer wavelength. High efficiency solar cells were fabricated during this study using optimized RIE. Saw damage removal (SDR) with acidic mixture followed by RIE-texturing showed the decrease in silicon loss by {proportional_to}67% and {proportional_to}70% compared to conventional SDR and texturing by alkaline solution. Also, the crystalline silicon solar cells fabricated by using RIE-texturing showed conversion efficiency as high as 16.7% and 16.1% compared with 16.2%, which was obtained in the case of the cell fabricated with SDR and texturing with NaOH solution. (author)

  8. Enlargement of halloysite clay nanotube lumen by selective etching of aluminum oxide.

    PubMed

    Abdullayev, Elshad; Joshi, Anupam; Wei, Wenbo; Zhao, Yafei; Lvov, Yuri

    2012-08-28

    Halloysite clay tubes have 50 nm diameter and chemically different inner and outer walls (inner surface of aluminum oxide and outer surface of silica). Due to this different chemistry, the selective etching of alumina from inside the tube was realized, while preserving their external diameter (lumen diameter changed from 15 to 25 nm). This increases 2-3 times the tube lumen capacity for loading and further sustained release of active chemical agents such as metals, corrosion inhibitors, and drugs. In particular, halloysite loading efficiency for the benzotriazole increased 4 times by selective etching of 60% alumina within the tubes' lumens. Specific surface area of the tubes increased over 6 times, from 40 to 250 m(2)/g, upon acid treatment.

  9. Composition/bandgap selective dry photochemical etching of semiconductor materials

    DOEpatents

    Ashby, C.I.H.; Dishman, J.L.

    1985-10-11

    Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg/sub 1/ in the presence of a second semiconductor material of a different composition and direct bandgap Eg/sub 2/, wherein Eg/sub 2/ > Eg/sub 1/, said second semiconductor material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg/sub 1/ but less than Eg/sub 2/, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

  10. Composition/bandgap selective dry photochemical etching of semiconductor materials

    DOEpatents

    Ashby, Carol I. H.; Dishman, James L.

    1987-01-01

    A method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg.sub.1 in the presence of a second semiconductor material of a different composition and direct bandgap Eg.sub.2, wherein Eg.sub.2 >Eg.sub.1, said second semiconductor material substantially not being etched during said method, comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg.sub.1 but less than Eg.sub.2, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

  11. Consideration of VT5 etch-based OPC modeling

    NASA Astrophysics Data System (ADS)

    Lim, ChinTeong; Temchenko, Vlad; Kaiser, Dieter; Meusel, Ingo; Schmidt, Sebastian; Schneider, Jens; Niehoff, Martin

    2008-03-01

    Including etch-based empirical data during OPC model calibration is a desired yet controversial decision for OPC modeling, especially for process with a large litho to etch biasing. While many OPC software tools are capable of providing this functionality nowadays; yet few were implemented in manufacturing due to various risks considerations such as compromises in resist and optical effects prediction, etch model accuracy or even runtime concern. Conventional method of applying rule-based alongside resist model is popular but requires a lot of lengthy code generation to provide a leaner OPC input. This work discusses risk factors and their considerations, together with introduction of techniques used within Mentor Calibre VT5 etch-based modeling at sub 90nm technology node. Various strategies are discussed with the aim of better handling of large etch bias offset without adding complexity into final OPC package. Finally, results were presented to assess the advantages and limitations of the final method chosen.

  12. Silicon nanowire photodetectors made by metal-assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Xu, Ying; Ni, Chuan; Sarangan, Andrew

    2016-09-01

    Silicon nanowires have unique optical effects, and have potential applications in photodetectors. They can exhibit simple optical effects such as anti-reflection, but can also produce quantum confined effects. In this work, we have fabricated silicon photodetectors, and then post-processed them by etching nanowires on the incident surface. These nanowires were produced by a wet-chemical etching process known as the metal-assisted-chemical etching, abbreviated as MACE. N-type silicon substrates were doped by thermal diffusion from a solid ceramic source, followed by etching, patterning and contact metallization. The detectors were first tested for functionality and optical performance. The nanowires were then made by depositing an ultra-thin film of gold below its percolation thickness to produce an interconnected porous film. This was then used as a template to etch high aspect ratio nanowires into the face of the detectors with a HF:H2O2 mixture.

  13. In-situ diagnostics and characterization of etch by-product deposition on chamber walls during halogen etching of silicon

    NASA Astrophysics Data System (ADS)

    Rastgar, Neema; Sriraman, Saravanapriyan; Marsh, Ricky; Paterson, Alex

    2014-10-01

    Plasma etching is a critical technology for nanoelectronics fabrication, but the use of a vacuum chamber limits the number of in-situ, real-time diagnostics measurements that can be performed during an etch process. Byproduct deposition on chamber walls during etching can affect the run-to-run performance of an etch process if there is build-up or change of wall characteristics with time. Knowledge of chamber wall evolution and the composition of wall-deposited films are critical to understanding the performance of plasma etch processes, and an in-situ diagnostics measurement is useful for monitoring the chamber walls in real time. We report the use of attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) to perform in-situ diagnostics of a vacuum chamber's walls during plasma etching. Using ATR-FTIR, we are able to monitor the relative thickness and makeup of chamber wall deposits in real time. We then use this information to develop a chamber wall cleaning process in order to maintain reproducible etching conditions from wafer to wafer. In particular, we report mid-IR (4000-650 cm-1) absorption spectra of chamber wall-deposited silicon byproducts formed during halogen etching of silicon wafers.

  14. Effects of Etch-and-Rinse and Self-etch Adhesives on Dentin MMP-2 and MMP-9

    PubMed Central

    Mazzoni, A.; Scaffa, P.; Carrilho, M.; Tjäderhane, L.; Di Lenarda, R.; Polimeni, A.; Tezvergil-Mutluay, A.; Tay, F.R.; Pashley, D.H.; Breschi, L.

    2013-01-01

    Auto-degradation of collagen matrices occurs within hybrid layers created by contemporary dentin bonding systems, by the slow action of host-derived matrix metalloproteinases (MMPs). This study tested the null hypothesis that there are no differences in the activities of MMP-2 and -9 after treatment with different etch-and-rinse or self-etch adhesives. Tested adhesives were: Adper Scotchbond 1XT (3M ESPE), PQ1 (Ultradent), Peak LC (Ultradent), Optibond Solo Plus (Kerr), Prime&Bond NT (Dentsply) (all 2-step etch-and-rinse adhesives), and Adper Easy Bond (3M ESPE), Tri-S (Kuraray), and Xeno-V (Dentsply) (1-step self-etch adhesives). MMP-2 and -9 activities were quantified in adhesive-treated dentin powder by means of an activity assay and gelatin zymography. MMP-2 and MMP-9 activities were found after treatment with all of the simplified etch-and-rinse and self-etch adhesives; however, the activation was adhesive-dependent. It is concluded that all two-step etch-and-rinse and the one-step self-etch adhesives tested can activate endogenous MMP-2 and MMP-9 in human dentin. These results support the role of endogenous MMPs in the degradation of hybrid layers created by these adhesives. PMID:23128110

  15. Chemical etching of bovine serum albumin-protected Au25 nanoclusters for label-free and separation-free detection of cysteamine.

    PubMed

    Shu, Tong; Su, Lei; Wang, Jianxing; Li, Chenzhong; Zhang, Xueji

    2015-04-15

    This study describes a novel Au nanocluster-based fluorescent sensor for label-free, separation-free and selective detection of cysteamine (CSH). The sensing mechanism is based on CSH etching-induced fluorescence quenching of the bovine serum albumin-protected Au25 nanoclusters (BSAGNCs). A series of characterizations is carried out towards a better understanding of the CSH-induced fluorescence quenching of the BSAGNCs. It is found that CSH can etch the Au25 nanoclusters, exhibiting the potent etching activity. Other thiol-containing compounds such as glutathione and cysteine and other 19 natural amino acids do not interfere with such CSH-induced etching process. The decreases in fluorescence intensity of the BSAGNCs allow sensitive detection of free CSH in the range of 500-10,000nM. The detection limit for CSH is 150nM (S/N=3). The spiked human serum samples can be analyzed with satisfactory results.

  16. Optimized condition for etching fused-silica phase gratings with inductively coupled plasma technology.

    PubMed

    Wang, Shunquan; Zhou, Changhe; Ru, Huayi; Zhang, Yanyan

    2005-07-20

    Polymer deposition is a serious problem associated with the etching of fused silica by use of inductively coupled plasma (ICP) technology, and it usually prevents further etching. We report an optimized etching condition under which no polymer deposition will occur for etching fused silica with ICP technology. Under the optimized etching condition, surfaces of the fabricated fused silica gratings are smooth and clean. Etch rate of fused silica is relatively high, and it demonstrates a linear relation between etched depth and working time. Results of the diffraction of gratings fabricated under the optimized etching condition match theoretical results well.

  17. Characterization of silicon isotropic etch by inductively coupled plasma etcher for microneedle array fabrication

    NASA Astrophysics Data System (ADS)

    Ji, Jing; Tay, Francis E. H.; Miao, Jianmin; Sun, Jianbo

    2006-04-01

    This work investigates the isotropic etching properties in inductively coupled plasma (ICP) etcher for microneedle arrays fabrication. The effects of process variables including powers, gas and pressure on needle structure generation are characterized by factorial design of experiment (DOE). The experimental responses of vertical etching depth, lateral etching length, ratio of vertical etching depth to lateral etching length and photoresist etching rate are reported. The relevance of the etching variables is also presented. The obtained etching behaviours for microneedle structure generation will be applied to develop recipes to fabricate microneedles in designed dimensions.

  18. Bulk filling of Class II cavities with a dual-cure composite: Effect of curing mode and enamel etching on marginal adaptation

    PubMed Central

    Bortolotto, Tissiana; Roig, Miguel; Krejci, Ivo

    2014-01-01

    Objectives: This study attempted to find a simple adhesive restorative technique for class I and II cavities on posterior teeth. Study Design: The tested materials were a self-etching adhesive (Parabond, Coltène/Whaledent) and a dual-cure composite (Paracore, Coltène/Whaledent) used in bulk to restore the cavities. Class II MO cavities were performed and assigned to 4 groups depending on the orthophosphoric acid (H3PO4) conditioning of enamel and polymerization method used (chemical or dual). Specimens were subjected to quantitative marginal analysis before and after thermo-mechanical loading. Results: Higher percentages of marginal adaptation at the total margin length, both before and after thermo-mechanical loading, were found in groups in which enamel was etched with phosphoric acid, without significant differences between the chemically and dual-cured modes. The restorations performance was similar on enamel and dentin, obtaining low results of adaptation on occlusal enamel in the groups without enamel etching, the lowest scores were on cervical dentin in the group with no ortophosphoric acid and self-cured. Conclusions: A dual-cure composite applied in bulk on acid etched enamel obtained acceptable marginal adaptation results, and may be an alternative technique for the restoration of class II cavities. Key words:Dual-cure composite, bulk technique, class II restoration, selective enamel etching, marginal adaptation. PMID:25674316

  19. Dry etching technologies for the advanced binary film

    NASA Astrophysics Data System (ADS)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

    2011-11-01

    ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

  20. Solid polymer electrolyte composite membrane comprising plasma etched porous support

    DOEpatents

    Liu, Han; LaConti, Anthony B.

    2010-10-05

    A solid polymer electrolyte composite membrane and method of manufacturing the same. According to one embodiment, the composite membrane comprises a rigid, non-electrically-conducting support, the support preferably being a sheet of polyimide having a thickness of about 7.5 to 15 microns. The support has a plurality of cylindrical pores extending perpendicularly between opposing top and bottom surfaces of the support. The pores, which preferably have a diameter of about 0.1 to 5 microns, are made by plasma etching and preferably are arranged in a defined pattern, for example, with fewer pores located in areas of high membrane stress and more pores located in areas of low membrane stress. The pores are filled with a first solid polymer electrolyte, such as a perfluorosulfonic acid (PFSA) polymer. A second solid polymer electrolyte, which may be the same as or different than the first solid polymer electrolyte, may be deposited over the top and/or bottom of the first solid polymer electrolyte.

  1. Evaluation of shear bond strength of metallic and ceramic brackets bonded to enamel prepared with self-etching primer.

    PubMed

    Uysal, Tancan; Ustdal, Ayca; Kurt, Gokmen

    2010-04-01

    The aim of this in vitro study was to evaluate the shear bond strength (SBS) of different metallic and ceramic bracket bonding combinations using self-etching primers (SEPs). Eighty freshly extracted human premolar teeth were randomly divided into four equal groups for bonding with ceramic or metallic brackets as follows: group 1, metallic brackets bonded with conventional acid etching; group 2, metallic brackets bonded with Transbond Plus Self-Etching primer (TPSEP); group 3, ceramic brackets bonded as per group 1; group 4, ceramic brackets bonded as per group 2. The SBS of these brackets was measured and recorded in megapascals (MPa). The adhesive remnant index (ARI) scores were determined after bracket failure. Data were analyzed with the analysis of variance, Tukey, and chi-square tests. The bond strength of group 3 (mean: 36.7 +/- 11.8 MPa) was significantly higher than group 4 (mean: 26.6 +/- 8.9 MPa; P < 0.05), group 1 (mean: 25.5 +/- 5.1 MPa; P < 0.01), and group 2 (mean: 22.9 +/- 7.3 MPa; P < 0.001). No significant differences in debond locations were found among the groups (P > 0.05). Compared with conventional acid etching, SEPs significantly decreased the SBS of ceramic orthodontic brackets.

  2. Layer by layer etching of LaAlSiOx

    NASA Astrophysics Data System (ADS)

    Hayashi, Hisataka

    2016-09-01

    In order to fabricate a gate transistor with high-k oxide materials, removal of high-k oxide films after gate electrode etching is necessary for the formation of ohmic contacts on source and drain regions. It is crucial that the removal process of high-k oxide film by dry etching is highly selective to and low in damage to the Si substrate in order to avoid the degradation of device performances. Sasaki et al. have achieved a high LaAlSiOx-to-Si selectivity of 6.7 using C4F8/Ar/H2 plasma. In the LaAlSiOx etching process using C4F8/Ar/H2 plasma, H2 plays a role in breaking the metal-oxygen bond to enhance etching of LaAlSiOx. Based on this result, the process was decomposed into two steps: a surface modification step using H2 plasma to break the metal-oxygen bond, and a removal step using C4F8/Ar plasma. A sequential layer by layer etching could realize low damage etching, similar to atomic layer etching. Therefore, a sequential LaAlSiOx etching process using a H2 surface modification step followed by a removal step using C4F8/Ar plasma is investigated. Experiments were carried out on 300 mm diameter wafers using the 100/13.56 MHz dual frequency superimposed capacitively coupled plasma reactor. The etching gases were H2 and C4F8/Ar for each step, respectively. Plasma process conditions were 100 MHz power of 1000 W (plasma generation), 13.56MHz power varied from 0 W to 300W (ion energy control). The substrate temperature was 40 °C. 15nm thick LaAlSiOx blanket film was used for evaluation of the etched amount. Film thickness was measured by X-ray fluorescent analysis thickness meter before and after plasma exposure. The etched amount of LaAlSiOx by the C4F8/Ar plasma step doubled with H2 modification. It is confirmed that when the C4F8/Ar plasma treatment time is sufficient to remove the surface modification layer, a self-limiting reaction is realized. Furthermore, it is confirmed that the etched amount per step can be controlled by control of the ion energy of H2

  3. Optical properties of micromachined polysilicon reflective surfaces with etching holes

    NASA Astrophysics Data System (ADS)

    Zou, Jun; Byrne, Colin; Liu, Chang; Brady, David J.

    1998-08-01

    MUMPS (Multi-User MEMS Process) is receiving increasingly wide use in micro optics. We have investigated the optical properties of the polysilicon reflective surface in a typical MUMPS chip within the visible light spectrum. The effect of etching holes on the reflected laser beam is studied. The reflectivity and diffraction patterns at five different wavelengths have been measured. The optical properties of the polysilicon reflective surface are greatly affected by the surface roughness, the etching holes, as well as the material. The etching holes contribute to diffraction and reduction of reflectivity. This study provides a basis for optimal design of micromachined free-space optical systems.

  4. Parametric study on the solderability of etched PWB copper

    SciTech Connect

    Hosking, F.M.; Stevenson, J.O.; Hernandez, C.L.

    1996-10-01

    The rapid advancement of interconnect technology has resulted in a more engineered approach to designing and fabricating printed wiring board (PWB) surface features. Recent research at Sandia National Laboratories has demonstrated the importance of surface roughness on solder flow. This paper describes how chemical etching was used to enhance the solderability of surfaces that were normally difficult to wet. The effects of circuit geometry, etch concentration, and etching time on solder flow are discussed. Surface roughness and solder flow data are presented. The results clearly demonstrate the importance of surface roughness on the solderability of fine PWB surface mount features.

  5. Selectively-etched nanochannel electrophoretic and electrochemical devices

    DOEpatents

    Surh, Michael P.; Wilson, William D.; Barbee, Jr., Troy W.; Lane, Stephen M.

    2004-11-16

    Nanochannel electrophoretic and electrochemical devices having selectively-etched nanolaminates located in the fluid transport channel. The normally flat surfaces of the nanolaminate having exposed conductive (metal) stripes are selectively-etched to form trenches and baffles. The modifications of the prior utilized flat exposed surfaces increase the amount of exposed metal to facilitate electrochemical redox reaction or control the exposure of the metal surfaces to analytes of large size. These etched areas variously increase the sensitivity of electrochemical detection devices to low concentrations of analyte, improve the plug flow characteristic of the channel, and allow additional discrimination of the colloidal particles during cyclic voltammetry.

  6. Selectively-etched nanochannel electrophoretic and electrochemical devices

    DOEpatents

    Surh, Michael P.; Wilson, William D.; Barbee, Jr., Troy W.; Lane, Stephen M.

    2006-06-27

    Nanochannel electrophoretic and electrochemical devices having selectively-etched nanolaminates located in the fluid transport channel. The normally flat surfaces of the nanolaminate having exposed conductive (metal) stripes are selectively-etched to form trenches and baffles. The modifications of the prior utilized flat exposed surfaces increase the amount of exposed metal to facilitate electrochemical redox reaction or control the exposure of the metal surfaces to analytes of large size. These etched areas variously increase the sensitivity of electrochemical detection devices to low concentrations of analyte, improve the plug flow characteristic of the channel, and allow additional discrimination of the colloidal particles during cyclic voltammetry.

  7. Structural and magnetic etch damage in CoFeB

    SciTech Connect

    Krayer, L.; Lau, J. W.; Kirby, B. J.

    2014-05-07

    A detailed understanding of the interfacial properties of thin films used in magnetic media is critical for the aggressive component scaling required for continued improvement in storage density. In particular, it is important to understand how common etching and milling processes affect the interfacial magnetism. We have used polarized neutron reflectometry and transmission electron microscopy to characterize the structural and magnetic properties of an ion beam etched interface of a CoFeB film. We found that the etching process results in a sharp magnetic interface buried under a nanometer scale layer of non-magnetic, compositionally distinct material.

  8. Metal-assisted chemical etch porous silicon formation method

    DOEpatents

    Li, Xiuling; Bohn, Paul W.; Sweedler, Jonathan V.

    2004-09-14

    A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

  9. Resistless lithography - selective etching of silicon with gallium doping regions

    NASA Astrophysics Data System (ADS)

    Abdullaev, D.; Milovanov, R.; Zubov, D.

    2016-12-01

    This paper presents the results for used of resistless lithography with a further reactive-ion etching (RIE) in various chemistry after local (Ga+) implantation of silicon with different doping dose and different size doped regions. We describe the different etching regimes for pattern transfer of FIB implanted Ga masks in silicon. The paper studied the influence of the implantation dose on the silicon surface, the masking effect and the mask resistance to erosion at dry etching. Based on these results we conclude about the possibility of using this method to create micro-and nanoscale silicon structures.

  10. Toward a durable superhydrophobic aluminum surface by etching and ZnO nanoparticle deposition.

    PubMed

    Rezayi, Toktam; Entezari, Mohammad H

    2016-02-01

    Fabrication of suitable roughness is a fundamental step for acquiring superhydrophobic surfaces. For this purpose, a deposition of ZnO nanoparticles on Al surface was carried out by simple immersion and ultrasound approaches. Then, surface energy reduction was performed using stearic acid (STA) ethanol solution for both methods. The results demonstrated that ultrasound would lead to more stable superhydrophobic Al surfaces (STA-ZnO-Al-U) in comparison with simple immersion method (STA-ZnO-Al-I). Besides, etching in HCl solution in another sample was carried out before ZnO deposition for acquiring more mechanically stable superhydrophobic surface. The potentiodynamic measurements demonstrate that etching in HCl solution under ultrasound leads to superhydrophobic surface (STA-ZnO-Al(E)-U). This sample shows remarkable decrease in corrosion current density (icorr) and long-term stability improvement versus immersion in NaCl solution (3.5%) in comparison with the sample prepared without etching (STA-ZnO-Al-U). Scanning electron micrograph (SEM) and energy-dispersive X-ray spectroscopy (EDX) confirmed a more condense and further particle deposition on Al substrate when ultrasound was applied in the system. The crystallite evaluation of deposited ZnO nanoparticles was carried out using X-ray diffractometer (XRD). Finally, for STA grafting verification on Al surface, Fourier transform infrared in conjunction with attenuated total reflection (FTIR-ATR) was used as a proper technique.

  11. Nanoporous Gallium Nitride Through Anisotropic Metal-Assisted Electroless Photochemical Wet Etching Technique

    NASA Astrophysics Data System (ADS)

    Perumal, R.; Hassan, Z.

    2016-12-01

    Nanoporous gallium nitride (GaN) has many potential applications in light-emitting diodes (LEDs), photovoltaics, templates and chemical sensors. This article reports the porosification of GaN through UV enhanced metal-assisted electroless photochemical wet etching technique using three different acid-based etchants and platinum served as catalyst for porosification. The etching process was conducted at room temperature for a duration of 90min. The morphological, structural, spectral and optical features of the developed porous GaN were studied with appropriate characterization techniques and the obtained results were presented. Field emission scanning electron micrographs exhibited the porosity nature along with excellent porous network of the etched samples. Structural studies confirmed the mono crystalline quality of the porous nanostructures. Raman spectral analyzes inferred the presenting phonon modes such as E2 (TO) and A1 (LO) in fabricated nanoporous structures. The resulted porous nanostructures hold the substantially enhanced photoluminescence intensity compared with the pristine GaN epitaxial film that is interesting and desirable for several advances in the applications of Nano-optoelectronic devices.

  12. Manganese-tuned chemical etching of a platinum-copper nanocatalyst with platinum-rich surfaces

    NASA Astrophysics Data System (ADS)

    Huang, Y. Y.; Zhao, T. S.; Zhao, G.; Yan, X. H.; Xu, K.

    2016-02-01

    This work presents a modified chemical etching strategy to fabricate binary metal nanocatalysts with large active areas. The strategy employs PtCu alloy particles with Pt-rich outer layers as the precursor and manganese species to manipulate the acid leaching processes. X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy techniques are used to analyze the catalyst structures and the tuning mechanism of manganese species during etching. It is found that the introduction of manganese species allows more Pt active sites to be formed onto the catalyst surface after etching, possibly due to reduction in the number of Pt atoms enclosed inside particles. The electrochemically active surface area of the synthetic MnA-PtCu/C catalyst increases by 90% relative to commercial Pt/C catalyst. As a result of the increase in active areas and the additional promotion effects by Cu, the MnA-PtCu/C catalyst reveals a methanol oxidation activity 1.7 and 4.0 times higher than that of the synthetic PtCu/C and commercial Pt/C catalysts, respectively.

  13. The magnetic properties and microstructure of Co-Pt thin films using wet etching process.

    PubMed

    Lee, Chang-Hyoung; Cho, Young-Lae; Lee, Won-Pyo; Suh, Su-Jeong

    2014-11-01

    Perpendicular magnetic recording (PMR) is a promising candidate for high density magnetic recording and has already been applied to hard disk drive (HDD) systems. However, media noise still limits the recording density. To reduce the media noise and achieve a high signal-to-noise ratio (SNR) in hard disk media, the grains of the magnetic layer must be magnetically isolated from each other. This study examined whether sputter-deposited Co-Pt thin films can have adjacent grains that are physically isolated. To accomplish this, the effects of the sputtering conditions and wet etching process on magnetic properties and the microstructure of the films were investigated. The film structure was Co-Pt (30 nm)/Ru (30 nm)/NiFe (10 nm)/Ta (5 nm). The composition of the Co-Pt thin films was Co-30.7 at.% Pt. The Co-Pt thin films were deposited in Ar gas at 5, 10, 12.5, and 15 mTorr. Wet etching process was performed using 7% nitric acid solution at room temperature. These films had high out-of-plane coercivity of up to 7032 Oe, which is twice that of the as-deposited film. These results suggest that wet etched Co-Pt thin films have weaker exchange coupling and enhanced out-of-plane coercivity, which would reduce the medium noise.

  14. Evaluation of Pentafluoroethane and 1,1-Difluoroethane for a Dielectric Etch Application in an Inductively Coupled Plasma Etch Tool

    NASA Astrophysics Data System (ADS)

    Karecki, Simon; Chatterjee, Ritwik; Pruette, Laura; Reif, Rafael; Sparks, Terry; Beu, Laurie; Vartanian, Victor

    2000-07-01

    In this work, a combination of two hydrofluorocarbon compounds, pentafluoroethane (FC-125, C2HF5) and 1,1-difluoroethane (FC-152a, CF2H-CH3), was evaluated as a potential replacement for perfluorocompounds in dielectric etch applications. A high aspect ratio oxide via etch was used as the test vehicle for this study, which was conducted in a commercial inductively coupled high density plasma etch tool. Both process and emissions data were collected and compared to those provided by a process utilizing a standard perfluorinated etch chemistry (C2F6). Global warming (CF4, C2F6, CHF3) and hygroscopic gas (HF, SiF4) emissions were characterized using Fourier transform infrared (FTIR) spectroscopy. FC-125/FC-152a was found to produce significant reductions in global warming emissions, on the order of 68 to 76% relative to the reference process. Although etch stopping, caused by a high degree of polymer deposition inside the etched features, was observed, process data otherwise appeared promising for an initial study, with good resist selectivity and etch rates being achieved.

  15. Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl{sub 2} ion beam assisted etching

    SciTech Connect

    Anglin, Kevin Goodhue, William D.; Swint, Reuel B.; Porter, Jeanne

    2015-03-15

    A deeply etched, anisotropic 45° and 90° mirror technology is developed for Al{sub x}Ga{sub 1−x}As heterostructures using a Cl{sub 2} ion beam assisted etching system. When etching vertically, using a conductive low-erosion Ni mask, electrochemical etch differences between layers with various Al mole fractions caused nonuniform sidewall profiles not seen in semi-insulating GaAs test samples. These variations, based on alloy composition, were found to be negligible when etching at a 45°. A Si{sub 3}N{sub 4}-Ni etch mask is designed in order to electrically isolate charge buildup caused by the incoming Ar{sup +} ion beam to the Ni layer, preventing conduction to the underlying epitaxial layers. This modification produced smoothly etched facets, up to 8 μm in depth, enabling fabrication of substrate–surface-emitting slab-coupled optical waveguide lasers and other optoelectronic devices.

  16. A comparison of wet and dry etching to fabricate a micro-photonic structure for use in OCT

    NASA Astrophysics Data System (ADS)

    Jansz, Paul; Wild, Graham; Hinckley, Steven

    2008-12-01

    In conventional time-domain Optical Coherence Tomography (OCT), a moving mirror is used as a reference optical delay line. This motion can result in instrument degradation, and in some situations it is preferable to have no moving parts. Stationary optical delay lines using a variety of methods have been proposed. Of particular interest, due to its low cost, is the use of a micro-photonic stationary optical delay line, made up of an addressable Stepped Mirror Structure (SMS) using a liquid crystal optical switch. Here the individual steps of the SMS can be selected by the liquid crystal array. For use in OCT, the discrete nature of the SMS needs to be overcome by having the step height less than the coherence length of the low coherent light source. Typical coherence lengths in current OCT systems are on the order of 10μm. Hence, micrometer size steps require the use of a relevant fabrication method. In this paper, we compare SMSs fabricated using wet and dry etching methods. Specifically, Reactive Ion Etching (RIE) using CF4/O2 and chemical bath etching, using a solution of HF, HNO3 and Acetic acid. Three inch diameter silicon wafers, 400μm thick, were etched by both methods. The RIE was used to produce a SMS with five 5μm high steps each step approximately 1 cm wide. The wet etching produced an SMS with three 15μm steps approximately 2 cm wide. The overall structures of the SMSs were compared using optical profilometry. The RIE step quality was far superior to the wet etch method due to the ability to control the anisotropy of the RIE method.

  17. Light-Cured Self-Etch Adhesives Undergo Hydroxyapatite-Triggered Self-Cure.

    PubMed

    Liu, Y; Bai, X; Liu, Y W; Wang, Y

    2016-03-01

    Light cure is a popular mode of curing for dental adhesives. However, it suffers from inadequate light delivery when the restoration site is less accessible, in which case a self-cure mechanism is desirable to salvage any compromised polymerization. We previously reported a novel self-cure system mediated by ethyl 4-(dimethylamino)-benzoate (4E) and hydroxyapatite (HAp). The present work aims to investigate if such self-cure phenomenon takes place in adhesives that underwent prior inadequate light cure and to elucidate if HAp released from the dental etching process is sufficient to trigger it. Model self-etch adhesives were formulated with various components, including bis[2-methacryloyloxy)ethyl]-phosphate (2MP) as acidic monomer and trimethylbenzoyl-diphenylphosphine oxide (TPO) as photoinitiator. In vitro evolution of degree of conversion (DC) of HAp-incorporated adhesives was monitored by infrared spectroscopy during light irradiation and dark storage. Selected adhesives were allowed to etch and extract HAp from enamel, light-cured in situ, and stored in the dark, after which Raman line mapping was used to obtain spatially resolved DC across the enamel-resin interface. Results showed that TPO+4E adhesives reached DC similar to TPO-only counterparts upon completion of light irradiation but underwent another round of initiation that boosted DC to ~100% regardless of HAp level or prior light exposure. When applied to enamel, TPO-only adhesives had ~80% DC in resin, which gradually descended to ~50% in enamel, whereas TPO+4E adhesives consistently scored ~80% DC across the enamel-resin interface. These observations suggest that polymerization of adhesives that underwent insufficient light cure is salvaged by the novel self-cure mechanism, and such salvaging effect can be triggered by HAp released from dental substrate during the etching process.

  18. Selforganized Structure Formation in Organized Microstructuring by Laser-Jet Etching

    NASA Astrophysics Data System (ADS)

    Rabbow, T. J.; Plath, P. J.; Mora, A.; Haase, M.

    Laser-jet induced wet etching of stainless steel in 5M H3PO4 has been investigated. By this method, it is possible to cut and microstructure metals and alloys that form passive layers in strong etchants. Due to the laser heating of the metal and the adjacent layers of the etchant, the passive layer is removed and an active dissolution of the base metal together with the formation of hydrogen is observed. The reactions are limited by the transport of fresh acid and the removal of dissolved metal. A jet of etchant reduces the transport limitations. For definite ranges of the laser power, the feed velocity and the etchant jet velocity, a regime of periodic structure formation of the kerf, often called ripples, has been found. The ripple length depends on all three parameters. The ripple formation can be brought into correlation with a periodic change of the intensity of the reflected light as well as oscillations of the potential workpiece. It could be shown that the periodic structure formation is connected to a spreading of an etching front from the laser activated area, that temporarily moves ahead to the laser. This leads to modulations of the interface for the laser absorption, which results, for example, in oscillations of the intensity of the reflected light. This means the laser induced etching reaction attracts a feedback based on the conditions of absorption for the laser. For those parameters of feed velocity, laser power and etchant jet velocity, without ripple formation the laser induced etching front is of a constant distance to the laser which results in steady conditions at the interface for the absorption of the laser.

  19. Wetting ability of an acetone/based etch&rinse adhesive after NaOCl-treatment

    PubMed Central

    Aguilera, Fátima S.; Osorio, Raquel; Osorio, Estrella; Moura, Pedro

    2012-01-01

    Objectives: to evaluate the effect of sodium hypochlorite (NaOCl) treatment on surface dentin roughness (Ra) and contact angle (CA) when using Prime&Bond NT adhesive (PB NT). Study Design: Extracted human third molars were sectioned to expose flat, superficial and deep dentin surfaces. CA and Ra were measured (1) before and (2) after 35% H3PO4 etching, and (3) H3PO4 etching + 5% NaOCl treated for 2 minutes before the application of PB NT. CA was measured by the Axisymmetric Drop Shape Analysis Technique using distilled and deionized water and PB NT. Roughness was evaluated with a profilometer, twelve radial measurements were performed in each treatment surface. Data were analyzed with two-way ANOVA and Newman-Keuls multiple comparison test procedures. Results: CA values decreased after acid etching and even more after NaOCl treatment on deep dentin when water was tested. With resin, there were not differences on CA results after H3PO4 neither after NaOCl treatment, in both dentin surfaces. Etching and NaOCl treatment resulted in surface roughness increase. Conclusions: In spite of the higher roughness after NaOCl treatment on superficial and deep dentin, the use of 5% NaOCl for 2 min after dentin demineralization when PB NT was employed did not improved the wettability of dentin, probably due to nanofiller content and/or hydrogen-bonding interactions with residues of the organic matrix on collagen-depleted dentin. Key words:Sodium hypochlorite, contact angle, roughness, Prime&Bond NT, superficial dentin, deep dentin. PMID:22322490

  20. Galvanic corrosion of Cu coupled to Au on a print circuit board; Effects of pretreatment solution and etchant concentration in organic solderability preservatives soft etching solution

    NASA Astrophysics Data System (ADS)

    Oh, SeKwon; Kim, YoungJun; Shon, MinYoung; Kwon, HyukSang

    2016-09-01

    In present study, we quantitatively define the galvanic corrosion phenomenon of Cu electrically coupled to Au on Print Circuit Board in Organic Solderability Preservatives (OSP) pretreatment (pickling and soft etching) solutions. As a result of polarization and ZRA test, galvanic corrosion rate of Cu in soft etching solution was about 3000 times higher than that of pickling solution. The oxone in OSP soft etching solution was acted as strong oxidant for Cu on PCB substrate. And the galvanic corrosion of Cu in OSP soft etching solution was examined with the change of etchants (oxone (KHSO5), sulfuric acid (H2SO4)) concentration. The galvanic corrosion rate of Cu was increased by the increase of the oxone and sulfuric acid concentrations, which lead to the increase of cathodic reactant such as HSO 5 - and H+ ions. And the degree of galvanic corrosion rate of Cu (Δisoft etching = icouple, (Cu-Au) - icorr, Cu) decreased with the decrease of the oxone and sulfuric acid concentrations.

  1. Automated process control for plasma etching

    NASA Astrophysics Data System (ADS)

    McGeown, Margaret; Arshak, Khalil I.; Murphy, Eamonn

    1992-06-01

    This paper discusses the development and implementation of a rule-based system which assists in providing automated process control for plasma etching. The heart of the system is to establish a correspondence between a particular data pattern -- sensor or data signals -- and one or more modes of failure, i.e., a data-driven monitoring approach. The objective of this rule based system, PLETCHSY, is to create a program combining statistical process control (SPC) and fault diagnosis to help control a manufacturing process which varies over time. This can be achieved by building a process control system (PCS) with the following characteristics. A facility to monitor the performance of the process by obtaining and analyzing the data relating to the appropriate process variables. Process sensor/status signals are input into an SPC module. If trends are present, the SPC module outputs the last seven control points, a pattern which is represented by either regression or scoring. The pattern is passed to the rule-based module. When the rule-based system recognizes a pattern, it starts the diagnostic process using the pattern. If the process is considered to be going out of control, advice is provided about actions which should be taken to bring the process back into control.

  2. Ion orbits in plasma etching of semiconductors

    SciTech Connect

    Madziwa-Nussinov, Tsitsi G.; Arnush, Donald; Chen, Francis F.

    2008-01-15

    Fabrication of high-speed semiconductor circuits depends on etching submicron trenches and holes with straight walls, guided by sheath accelerated ions, which strike the substrate at a normal angle. Electrons accumulate at the nonconductive entrance of each trench, charging it negatively and preventing the penetration of electrons to the bottom of the trench. This 'electron shading' effect causes an ion charge at the bottom, which is well known to cause damage to thin oxide layers. In addition, the deflection of ions by electric fields in the trench can cause deformation of the trench shape. To study this effect, the ion orbits are computed self-consistently with their charging of the trench walls. It is found that (a) the orbits depend only on the electric fields at the entrance and are sensitive to changes in the shape of the photoresist layer there; (b) there is an 'ion shading' effect that protects part of the wall; and (c) the number of ions striking the wall is too small to cause any deformation thereof.

  3. Marginal permeability of self-etch and total-etch adhesive systems.

    PubMed

    Owens, Barry M; Johnson, William W; Harris, Edward F

    2006-01-01

    This study evaluated microleakage in vitro of self-etch and multi-step, total-etch adhesive systems. Ninety-six extracted non-carious human molars were randomly assigned to eight groups (n=12) and restored with different adhesive systems: Optibond Solo Plus, iBond, Adper Prompt L-Pop, Xeno III, Simplicity, Nano-Bond, Adper Scotchbond Multi-Purpose and Touch & Bond. Each group was treated following the manufacturer's instructions. Class V cavities were prepared on the facial or lingual surfaces of each tooth with coronal margins in enamel and apical margins in cementum (dentin). The teeth were restored with Z-100 resin composite. After polishing with Sof-Lex disks, the teeth were thermocycled for 1000 cycles and coated with nail varnish to within 1.0 mm of the restoration. The teeth were stained in 1% methylene blue dye for 24 hours and sectioned from the facial to lingual surface. Dye penetration (microleakage) was examined with a 20x binocular microscope. Enamel and dentin margin leakage was scored on a 0 to 3 ordinal scale. Data were analyzed using Kruskal-Wallis Analysis of Variance and Mann-Whitney U tests. Comparison of the adhesive groups at the enamel margin revealed: 1) Adper Scotchbond Multi-Purpose exhibited significantly less leakage than the other adhesive groups (except iBond); 2) among the self-etch adhesive groups, iBond exhibited significantly less leakage than Nano-Bond and 3) the other adhesive groups clustered intermediately. In contrast, there were no significant differences among the adhesive groups when the dentin margin was evaluated. A Wilcoxin signed rank test showed significantly less leakage at the enamel margins compared to the dentin margins of the eight adhesive systems tested. All data were submitted to statistical analysis at p<0.05 level of significance.

  4. Self-etch bonding agent beneath sealant: Bond strength for laser-irradiated enamel

    PubMed Central

    Borsatto, Maria Cristina; Giuntini, Jackelline de Lemes; Contente, Marta Maria Martins Giamatei; Gomes-Silva, Jaciara Miranda; Torres, Carolina Paes; Galo, Rodrigo

    2013-01-01

    Objectives: This study evaluated the in vitro shear bond strength (SBS) of a resin-based pit-and-fissure sealant (Fluroshield [F], Dentsply/Caulk) associated with either an etch-and-rinse (Adper Single Bond 2 [SB], 3M/ESPE) or a two-step self-etch adhesive system (Adper SE Plus [SE], 3M/ESPE) on Er: YAG laser-irradiated enamel. Materials and Methods: Seventeen sound third molar crowns were embedded in acrylic resin, and the mesial–distal enamel surfaces were flattened. The enamel sites were irradiated with a 2.94-μm wavelength Er: YAG laser (120 mJ, 4 Hz, noncontact mode/17 mm, 20 s). The specimens were randomly assigned to three groups according to the bonding technique: I - 37% phosphoric acid etching + SB + F; II - SE + F and III - F applied to acid-etched enamel, without an intermediate layer of bonding agent. In all of the groups, a 3-mm diameter enamel-bonding site was demarcated and the sealant cylinders were bonded. After 24 hours in distilled water, the shear bond strength was tested at a crosshead speed of 0.5 mm/minute. The data were analyzed by one-way ANOVA and Tukey's test. The debonded specimens were examined with a stereomicroscope to assess the failure modes. Results: The mean SBS values in MPa were I = 6.39 (±1.44); II = 9.50 (±2.79); and III = 5.26 (±1.82). No statistically significant differences were observed between groups I and III; SE/F presented a significantly higher SBS than that of the other groups (P = 0.001). With regard to the failure mode, groups I (65%) and II (75%) presented adhesive failures, while group III showed 50% adhesive failure. Cohesive failure did not occur. Conclusion: The application of the two-step self-etch bonding agent (Adper SE Plus) beneath the resin pit-and-fissure sealant placement resulted in a significantly higher bond strength for the Er:YAG laser-irradiated enamel. PMID:24926208

  5. Visible luminescence from silicon wafers subjected to stain etches

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; George, T.; Ksendzov, A.; Vasquez, R. P.

    1992-01-01

    Etching of Si in a variety of solutions is known to cause staining. These stain layers consist of porous material similar to that produced by anodic etching of Si in HF solutions. In this work, photoluminescence peaked in the red from stain-etched Si wafers of different dopant types, concentrations, and orientations produced in solutions of HF:HNO3:H2O was observed. Luminescence is also observed in stain films produced in solutions of NaNO2 in HF, but not in stain films produced in solutions of CrO3 in HF. The luminescence spectra are similar to those reported recently for porous Si films produced by anodic etching in HF solutions. However, stain films are much easier to produce, requiring no special equipment.

  6. System for etching thick aluminum layers minimizes bridging and undercutting

    NASA Technical Reports Server (NTRS)

    1966-01-01

    Four step photoresist process for etching thick aluminum layers for semiconductor device contacts produces uniform contact surfaces, eliminates bridging, minimizes undercutting, and may be used on various materials of any thickness.

  7. 157. Copy of Louis Rosenberg Etching (original in the Tower ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    157. Copy of Louis Rosenberg Etching (original in the Tower City Development Office) TERMINAL TOWER UNDER CONSTRUCTION, STEEL FRAMEWORK OF THE SOUTHWEST WING, VIEW WEST TO EAST - Terminal Tower Building, Cleveland Union Terminal, 50 Public Square, Cleveland, Cuyahoga County, OH

  8. Chemical etching for automatic processing of integrated circuits

    NASA Technical Reports Server (NTRS)

    Kennedy, B. W.

    1981-01-01

    Chemical etching for automatic processing of integrated circuits is discussed. The wafer carrier and loading from a receiving air track into automatic furnaces and unloading onto a sending air track are included.

  9. Removal of field and embedded metal by spin spray etching

    DOEpatents

    Contolini, R.J.; Mayer, S.T.; Tarte, L.A.

    1996-01-23

    A process of removing both the field metal, such as copper, and a metal, such as copper, embedded into a dielectric or substrate at substantially the same rate by dripping or spraying a suitable metal etchant onto a spinning wafer to etch the metal evenly on the entire surface of the wafer. By this process the field metal is etched away completely while etching of the metal inside patterned features in the dielectric at the same or a lesser rate. This process is dependent on the type of chemical etchant used, the concentration and the temperature of the solution, and also the rate of spin speed of the wafer during the etching. The process substantially reduces the metal removal time compared to mechanical polishing, for example, and can be carried out using significantly less expensive equipment. 6 figs.

  10. Summary of Chalcogenide Glass Processing: Wet-Etching and Photolithography

    SciTech Connect

    Riley, Brian J.; Sundaram, S. K.; Johnson, Bradley R.; Saraf, Laxmikant V.

    2006-12-01

    This report describes a study designed to explore the different properties of two different chalcogenide materials, As2S3 and As24S38Se38, when subjected to photolithographic wet-etching techniques. Chalcogenide glasses are made by combining chalcogen elements S, Se, and Te with Group IV and/or V elements. The etchant was selected from the literature and was composed of sodium hydroxide, isopropyl alcohol, and deionized water and the types of chalcogenide glass for study were As2S3 and As24S38Se38. The main goals here were to obtain a single variable etch rate curve of etch depth per time versus NaOH overall solution concentration in M and to see the difference in etch rate between a given etchant when used on the different chalcogenide stoichiometries. Upon completion of these two goals, future studies will begin to explore creating complex, integrated photonic devices via these methods.

  11. Removal of field and embedded metal by spin spray etching

    DOEpatents

    Contolini, Robert J.; Mayer, Steven T.; Tarte, Lisa A.

    1996-01-01

    A process of removing both the field metal, such as copper, and a metal, such as copper, embedded into a dielectric or substrate at substantially the same rate by dripping or spraying a suitable metal etchant onto a spinning wafer to etch the metal evenly on the entire surface of the wafer. By this process the field metal is etched away completely while etching of the metal inside patterned features in the dielectric at the same or a lesser rate. This process is dependent on the type of chemical etchant used, the concentration and the temperature of the solution, and also the rate of spin speed of the wafer during the etching. The process substantially reduces the metal removal time compared to mechanical polishing, for example, and can be carried out using significantly less expensive equipment.

  12. Process development for dry etching polydimethylsiloxane for neural electrodes.

    PubMed

    Anenden, Melissa P; Svehla, Martin; Lovell, Nigel H; Suaning, Gregg J

    2011-01-01

    In order to create high density electrode arrays, a reactive ion (dry) etching process was developed using sulphur hexafluoride (SF(6)) and oxygen (O(2)) plasma to pattern micro-structures in medical grade polydimethylsiloxane (PDMS). The surface topography and etch performance were analyzed by employing surface profilometry, scanning electron micrographs (SEM) and atomic force miscroscopy (AFM). The maximum etch rate was approximately 0.22 μm/min. The chemical modification of the PDMS structure in SF(6) and O(2) plasma was investigated through x-ray photoelectron spectroscopy (XPS). Micro-scale openings in PDMS were achieved using a dry etching method to allow charge injection at the electrode-tissue interface.

  13. Surface modification with alumina blasting and H2SO4-HCl etching for bonding two resin-composite veneers to titanium.

    PubMed

    Taira, Yohsuke; Egoshi, Takafumi; Kamada, Kohji; Sawase, Takashi

    2014-02-01

    The purpose of this study was to investigate the effect of an experimental surface treatment with alumina blasting and acid etching on the bond strengths between each of two resin composites and commercially pure titanium. The titanium surface was blasted with alumina and then etched with 45wt% H2SO4 and 15wt% HCl (H2SO4-HCl). A light- and heat-curing resin composite (Estenia) and a light-curing resin composite (Ceramage) were used with adjunctive metal primers. Veneered specimens were subjected to thermal cycling between 4 and 60°C for 50,000 cycles, and the shear bond strengths were determined. The highest bond strengths were obtained for Blasting/H2SO4-HCl/Estenia (30.2 ± 4.5 MPa) and Blasting/Etching/Ceramage (26.0 ± 4.5 MPa), the values of which were not statistically different, followed by Blasting/No etching/Estenia (20.4 ± 2.4 MPa) and Blasting/No etching/Ceramage (0.8 ± 0.3 MPa). Scanning electron microscopy observations revealed that alumina blasting and H2SO4-HCl etching creates a number of micro- and nanoscale cavities on the titanium surface, which contribute to adhesive bonding.

  14. Hydrothermal Etching Treatment to Rutile TiO2 Nanorod Arrays for Improving the Efficiency of CdS-Sensitized TiO2 Solar Cells

    NASA Astrophysics Data System (ADS)

    Wan, Jingshu; Liu, Rong; Tong, Yuzhu; Chen, Shuhuang; Hu, Yunxia; Wang, Baoyuan; Xu, Yang; Wang, Hao

    2016-01-01

    Highly ordered TiO2 nanorod arrays (NRAs) were directly grown on an F:SnO2 (FTO) substrate without any seed layer by hydrothermal route. For a larger surface area, the second-step hydrothermal treatment in hydrochloric acid was carried out to the as-prepared TiO2 NRAs. The results showed that the center portion of the TiO2 nanorods were dissolved in the etching solution to form a nanocave at the initial etching process. As the etching time extended, the tip parts of the nanocave wall split into lots of nanowires with a reduced diameter, giving rise to a remarkable increase of specific surface area for the TiO2 NRAs. The TiO2 films after etching treatment were sensitized by CdS quantum dots (QDs) to fabricate quantum dot-sensitized solar cells (QDSSCs), which exhibited a significant improvement in the photocurrent density in comparison with that of the un-treated device, this mainly attributed to the enhancement of QD loading and diffused reflectance ability. Through modifying the etching TiO2 films with TiCl4, a relatively high power conversion efficiency (PCE) of 3.14 % was obtained after optimizing the etching time.

  15. Hydrothermal Etching Treatment to Rutile TiO2 Nanorod Arrays for Improving the Efficiency of CdS-Sensitized TiO2 Solar Cells.

    PubMed

    Wan, Jingshu; Liu, Rong; Tong, Yuzhu; Chen, Shuhuang; Hu, Yunxia; Wang, Baoyuan; Xu, Yang; Wang, Hao

    2016-12-01

    Highly ordered TiO2 nanorod arrays (NRAs) were directly grown on an F:SnO2 (FTO) substrate without any seed layer by hydrothermal route. For a larger surface area, the second-step hydrothermal treatment in hydrochloric acid was carried out to the as-prepared TiO2 NRAs. The results showed that the center portion of the TiO2 nanorods were dissolved in the etching solution to form a nanocave at the initial etching process. As the etching time extended, the tip parts of the nanocave wall split into lots of nanowires with a reduced diameter, giving rise to a remarkable increase of specific surface area for the TiO2 NRAs. The TiO2 films after etching treatment were sensitized by CdS quantum dots (QDs) to fabricate quantum dot-sensitized solar cells (QDSSCs), which exhibited a significant improvement in the photocurrent density in comparison with that of the un-treated device, this mainly attributed to the enhancement of QD loading and diffused reflectance ability. Through modifying the etching TiO2 films with TiCl4, a relatively high power conversion efficiency (PCE) of 3.14 % was obtained after optimizing the etching time.

  16. 40 CFR 413.60 - Applicability: Description of the chemical etching and milling subcategory.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... chemical etching and milling subcategory. 413.60 Section 413.60 Protection of Environment ENVIRONMENTAL... Etching and Milling Subcategory § 413.60 Applicability: Description of the chemical etching and milling... chemical milling or etching of ferrous or nonferrous materials....

  17. 40 CFR 413.60 - Applicability: Description of the chemical etching and milling subcategory.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... chemical etching and milling subcategory. 413.60 Section 413.60 Protection of Environment ENVIRONMENTAL... Etching and Milling Subcategory § 413.60 Applicability: Description of the chemical etching and milling... chemical milling or etching of ferrous or nonferrous materials....

  18. 40 CFR 413.60 - Applicability: Description of the chemical etching and milling subcategory.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... chemical etching and milling subcategory. 413.60 Section 413.60 Protection of Environment ENVIRONMENTAL... Etching and Milling Subcategory § 413.60 Applicability: Description of the chemical etching and milling... chemical milling or etching of ferrous or nonferrous materials....

  19. 40 CFR 413.60 - Applicability: Description of the chemical etching and milling subcategory.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... chemical etching and milling subcategory. 413.60 Section 413.60 Protection of Environment ENVIRONMENTAL... Etching and Milling Subcategory § 413.60 Applicability: Description of the chemical etching and milling... chemical milling or etching of ferrous or nonferrous materials....

  20. 40 CFR 413.60 - Applicability: Description of the chemical etching and milling subcategory.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... chemical etching and milling subcategory. 413.60 Section 413.60 Protection of Environment ENVIRONMENTAL... Etching and Milling Subcategory § 413.60 Applicability: Description of the chemical etching and milling... chemical milling or etching of ferrous or nonferrous materials....

  1. Organization of silicon nanocrystals by localized electrochemical etching

    NASA Astrophysics Data System (ADS)

    Ayari-Kanoun, Asma; Drouin, Dominique; Beauvais, Jacques; Lysenko, Vladimir; Nychyporuk, Tetyana; Souifi, Abdelkader

    2009-10-01

    An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam lithography and plasma etching. Then, a short electrochemical etching current pulse led to formation of a single Si nanocrystal per each nanohole. As a result, high quality silicon nanocrystal arrays were formed with well controlled and reproducible morphologies. In future, this approach can be used to fabricate single electron devices.

  2. Organization of silicon nanocrystals by localized electrochemical etching

    SciTech Connect

    Ayari-Kanoun, Asma; Drouin, Dominique; Beauvais, Jacques; Lysenko, Vladimir; Nychyporuk, Tetyana; Souifi, Abdelkader

    2009-10-12

    An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam lithography and plasma etching. Then, a short electrochemical etching current pulse led to formation of a single Si nanocrystal per each nanohole. As a result, high quality silicon nanocrystal arrays were formed with well controlled and reproducible morphologies. In future, this approach can be used to fabricate single electron devices.

  3. Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

    DOEpatents

    Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

    2016-03-01

    Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

  4. Note: Electrochemical etching of cylindrical nanoprobes using a vibrating electrolyte

    SciTech Connect

    Wang, Yufeng; Zeng, Yongbin Qu, Ningsong; Zhu, Di

    2015-07-15

    An electrochemical etching process using a vibrating electrolyte of potassium hydroxide to prepare tungsten cylindrical nanotips is developed. The vibrating electrolyte eases the effects of a diffusion layer and extends the etching area, which aid in the production of cylindrical nanotips. Larger amplitudes and a vibration frequency of 35 Hz are recommended for producing cylindrical nanotips. Nanotips with a tip radius of approximately 43 nm and a conical angle of arctan 0.0216 are obtained.

  5. The grand challenges of plasma etching: a manufacturing perspective

    NASA Astrophysics Data System (ADS)

    Lee, Chris G. N.; Kanarik, Keren J.; Gottscho, Richard A.

    2014-07-01

    Plasma etching has been enabling nano-electronic fabrication since the 1980s; during this time, transistor size has shrunk by nearly two orders of magnitude, starting at 1.0 µm in the mid 80s to ˜0.01 µm today. The manufacturing of these devices requires overcoming a series of challenges, ranging from continuous innovation on device integration to extend Moore's law to breaking tradeoffs on the perennial challenge of aspect ratio-dependent etching. In this paper, we will review four key areas in etch manufacturing: uniformity, defects, surface precision and ‘sticky’/non-volatile etch materials. In the uniformity section, we will discuss the challenges for microscopic uniformity, such as localized feature dimension variations; macroscopic uniformity, such as performance at the extreme edge of the wafer; and repeatable uniformity, meaning wafer-to-wafer, lot-to-lot and chamber-to-chamber performance. While defect management is successful with in situ plasma cleans, one must be cognizant of the choice of clean chemistry. In surface precision, we look at the approach of atomic layer etching and how it can be successful in a manufacturing environment. Finally, in the non-volatile material section, we review technology drivers for DRAM (dynamic random access memory) and NAND flash memory in the microelectronics Si industry, with focus on the utilization of such materials and what it means to etch equipment manufacturers.

  6. Etching Rate of Silicon Dioxide Using Chlorine Trifluoride Gas

    NASA Astrophysics Data System (ADS)

    Miura, Yutaka; Kasahara, Yu; Habuka, Hitoshi; Takechi, Naoto; Fukae, Katsuya

    2009-02-01

    The etching rate behavior of silicon dioxide (SiO2, fused silica) using chlorine trifluoride (ClF3) gas is studied at substrate temperatures between 573 and 1273 K at atmospheric pressure in a horizontal cold-wall reactor. The etching rate increases with the ClF3 gas concentration, and the overall reaction is recognized to be of the first order. The change of the etching rate with increasing substrate temperature is nonlinear, and the etching rate tends to approach a constant value at temperatures exceeding 1173 K. The overall rate constant is estimated by numerical calculation, taking into account the transport phenomena in the reactor, including the chemical reaction at the substrate surface. The activation energy obtained in this study is 45.8 kJ mol-1, and the rate constant is consistent with the measured etching rate behavior. A reactor system in which there is minimum etching of the fused silica chamber by ClF3 gas can be achieved using an IR lamp heating unit and a chamber cooling unit to maintain a sufficiently low temperature of the chamber wall.

  7. Low damage, highly anisotropic dry etching of SiC

    SciTech Connect

    Wang, J.J.; Hong, J.; Lambers, E.S.; Pearton, S.J.; Ren, F.; Ostling, M.; Zetterling, C.M.; Grow, J.M.; Shul, R.J.

    1998-03-01

    A parametric study of the etching characteristics of 6H p{sup +} and n{sup +} SiC and thin film SiC{sub 0.5}N{sub 0.5} in Inductively Coupled Plasma NF{sub 3}/O{sub 2} and NF{sub 3}/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF{sub 3} percentage and rf chuck power. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tin-oxide (ITO) masks display relatively good etch selectivity over SiC (maximum of {approximately} 70:1), while photoresist etches more rapidly than SiC. The surface roughness of SiC is essentially independent of plasma composition for NF3/O2 discharges, while extensive surface degradation occurs for SiCN under high NF{sub 3}:O{sub 2} conditions.

  8. Etching of silicon surfaces using atmospheric plasma jets

    NASA Astrophysics Data System (ADS)

    Paetzelt, H.; Böhm, G.; Arnold, Th

    2015-04-01

    Local plasma-assisted etching of crystalline silicon by fine focused plasma jets provides a method for high accuracy computer controlled surface waviness and figure error correction as well as free form processing and manufacturing. We investigate a radio-frequency powered atmospheric pressure He/N2/CF4 plasma jet for the local chemical etching of silicon using fluorine as reactive plasma gas component. This plasma jet tool has a typical tool function width of about 0.5 to 1.8 mm and a material removal rate up to 0.068 mm3 min-1. The relationship between etching rate and plasma jet parameters is discussed in detail regarding gas composition, working distance, scan velocity and RF power. Surface roughness after etching was characterized using atomic force microscopy and white light interferometry. A strong smoothing effect was observed for etching rough silicon surfaces like wet chemically-etched silicon wafer backsides. Using the dwell-time algorithm for a deterministic surface machining by superposition of the local removal function of the plasma tool we show a fast and efficient way for manufacturing complex silicon structures. In this article we present two examples of surface processing using small local plasma jets.

  9. Vapor etching of nuclear tracks in dielectric materials

    DOEpatents

    Musket, Ronald G.; Porter, John D.; Yoshiyama, James M.; Contolini, Robert J.

    2000-01-01

    A process involving vapor etching of nuclear tracks in dielectric materials for creating high aspect ratio (i.e., length much greater than diameter), isolated cylindrical holes in dielectric materials that have been exposed to high-energy atomic particles. The process includes cleaning the surface of the tracked material and exposing the cleaned surface to a vapor of a suitable etchant. Independent control of the temperatures of the vapor and the tracked materials provide the means to vary separately the etch rates for the latent track region and the non-tracked material. As a rule, the tracked regions etch at a greater rate than the non-tracked regions. In addition, the vapor-etched holes can be enlarged and smoothed by subsequent dipping in a liquid etchant. The 20-1000 nm diameter holes resulting from the vapor etching process can be useful as molds for electroplating nanometer-sized filaments, etching gate cavities for deposition of nano-cones, developing high-aspect ratio holes in trackable resists, and as filters for a variety of molecular-sized particles in virtually any liquid or gas by selecting the dielectric material that is compatible with the liquid or gas of interest.

  10. Etching of germanium-tin using ammonia peroxide mixture

    SciTech Connect

    Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia; Zhang, Zheng; Pan, Jisheng; Tok, Eng-Soon

    2015-12-28

    The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

  11. Influence of copper foil polycrystalline structure on graphene anisotropic etching

    NASA Astrophysics Data System (ADS)

    Sharma, Kamal P.; Mahyavanshi, Rakesh D.; Kalita, Golap; Tanemura, Masaki

    2017-01-01

    Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal catalyst crystallographic structure.

  12. Level Set Approach to Anisotropic Wet Etching of Silicon

    PubMed Central

    Radjenović, Branislav; Radmilović-Radjenović, Marija; Mitrić, Miodrag

    2010-01-01

    In this paper a methodology for the three dimensional (3D) modeling and simulation of the profile evolution during anisotropic wet etching of silicon based on the level set method is presented. Etching rate anisotropy in silicon is modeled taking into account full silicon symmetry properties, by means of the interpolation technique using experimentally obtained values for the etching rates along thirteen principal and high index directions in KOH solutions. The resulting level set equations are solved using an open source implementation of the sparse field method (ITK library, developed in medical image processing community), extended for the case of non-convex Hamiltonians. Simulation results for some interesting initial 3D shapes, as well as some more practical examples illustrating anisotropic etching simulation in the presence of masks (simple square aperture mask, convex corner undercutting and convex corner compensation, formation of suspended structures) are shown also. The obtained results show that level set method can be used as an effective tool for wet etching process modeling, and that is a viable alternative to the Cellular Automata method which now prevails in the simulations of the wet etching process. PMID:22399916

  13. Chemical etching of zinc oxide for thin-film silicon solar cells.

    PubMed

    Hüpkes, Jürgen; Owen, Jorj I; Pust, Sascha E; Bunte, Eerke

    2012-01-16

    Chemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on the structural material properties and etching agent. All grain boundaries are prone to be etched to a certain threshold, that is defined by the deposition conditions and etching solution. Additionally, several approaches to modify the etching behavior through special preparation and etching steps are provided.

  14. Comparison of Buffer Effect of Different Acids During Sandstone Acidizing

    NASA Astrophysics Data System (ADS)

    Umer Shafiq, Mian; Khaled Ben Mahmud, Hisham; Hamid, Mohamed Ali

    2015-04-01

    The most important concern of sandstone matrix acidizing is to increase the formation permeability by removing the silica particles. To accomplish this, the mud acid (HF: HCl) has been utilized successfully for many years to stimulate the sandstone formations, but still it has many complexities. This paper presents the results of laboratory investigations of different acid combinations (HF: HCl, HF: H3PO4 and HF: HCOOH). Hydrofluoric acid and fluoboric acid are used to dissolve clays and feldspar. Phosphoric and formic acids are added as a buffer to maintain the pH of the solution; also it allows the maximum penetration of acid into the core sample. Different tests have been performed on the core samples before and after the acidizing to do the comparative study on the buffer effect of these acids. The analysis consists of permeability, porosity, color change and pH value tests. There is more increase in permeability and porosity while less change in pH when phosphoric and formic acids were used compared to mud acid. From these results it has been found that the buffer effect of phosphoric acid and formic acid is better than hydrochloric acid.

  15. In vitro bonding effectiveness of self-etch adhesives with different application techniques: A microleakage and scanning electron microscopic study

    PubMed Central

    Nagpal, Rajni; Manuja, Naveen; Tyagi, Shashi Prabha; Singh, Udai Pratap

    2011-01-01

    Aim: To evaluate and compare the microleakage of self-etch adhesives placed under different clinical techniques and to analyze the resin–dentin interfacial ultrastructure under scanning electron microscope (SEM). Materials and Methods: 100 extracted human premolars were divided into two groups for different adhesives (Clearfil S3 and Xeno III). Class V cavities were prepared. Each group was further divided into four subgroups (n = 10) according to the placement technique of the adhesive, i.e. according to manufacturer's directions (Group 1), with phosphoric acid etching of enamel margins (Group 2), with hydrophobic resin coat application (Group 3), with techniques of both groups 2 and 3 (Group 4). The cavities were restored with composite. Ten samples from each group were subjected to microleakage study. Five samples each of both the adhesives from groups 1 and 3 were used for SEM examination of the micromorphology of the resin–dentin interface. Results: At enamel margins for both the adhesives tested, groups 2 and 4 showed significantly lesser leakage than groups 1 and 3. At dentin margins, groups 3 and 4 depicted significantly reduced leakage than groups 1 and 2 for Xeno III. SEM observation of the resin–dentin interfaces revealed generalized gap and poor resin tag formation in both the adhesives. Xeno III showed better interfacial adaptation when additional hydrophobic resin coat was applied. Conclusions: In enamel, prior phosphoric acid etching reduces microleakage of self-etch adhesives, while in dentin, hydrophobic resin coating over one-step self-etch adhesives decreases the microleakage. PMID:22025829

  16. Evaluating the shear bond strength of enamel and dentin with or without etching: A comparative study between dimethacrylate-based and silorane-based adhesives

    PubMed Central

    Hajizadeh, Hila; Nasseh, Atefeh; Rahmanpour, Naim

    2015-01-01

    Background Silorane-based composites and their specific self-etch adhesive were introduced to conquest the polymerization shrinkage of methacrylate-based composites. It has been shown that additional etching of enamel and dentin can improve the bond strength of self-etch methacrylate-based adhesives but this claim is not apparent about silorane-based adhesives. Our objective was to compare the shear bond strength (SBS) of enamel and dentin between silorane-based adhesive resin and a methacrylate-based resin with or without additional etching. Material and Methods 40 sound human premolars were prepared and divided into two groups: 1- Filtek P60 composite and Clearfil SE Bond adhesive; 2- Filtek P90 composite and Silorane adhesive. Each group divided into two subgroups: with or without additional etching. For additional etching, 37% acid phosphoric was applied before bonding procedure. A cylinder of the composite was bonded to the surface. After 24 hours storage and 500 thermo cycling between 5-55°C, shear bond strength was assessed with the cross head speed of 0.5 mm/min. Then, bonded surfaces were observed under stereomicroscope to determine the failure mode. Data were analyzed with two-way ANOVA and Fischer exact test. Results Shear bond strength of Filtek P60 composite was significantly higher than Filtek P90 composite both in enamel and dentin surfaces (P<0.05). However, additional etching had no significant effect on shear bond strength in enamel or dentin for each of the composites (P>0.05). There was no interaction between composite type and additional etching (P>0.05). Failure pattern was mainly adhesive and no significant correlation was found between failure and composite type or additional etching (P>0.05). Conclusions Shear bond strength of methacrylate-based composite was significantly higher than silorane-based composite both in enamel and dentin surfaces and additional etching had no significant effect on shear bond strength in enamel or dentin for

  17. VUV and Optical Emission Characterization of Fluorocarbon SiO2 Etch Processes and Correlation to Etch Feature Quality

    NASA Astrophysics Data System (ADS)

    Hsueh, H.; Dandapani, E.; McGrath, R.; Messier, R.; Ji, B.; Karwacki, E.

    2000-10-01

    Fluorocarbon discharges used for SiO2 etch were characterized using optical (OES) and VUV emission spectroscopy. Actinometry was used to monitor atomic fluorine concentration (N_F) as power, pressure and gas mix were varied. Thermal oxide films were photolithographically patterned to define 0.5-2.0 μ m trench features, and then etched in an AMAT Mark II reactor. Etch rate, selectivity and feature critical dimension were measured using SEM and other techniques. DC self-bias was also recorded for each set of process conditions. Good etch features, etch rates of 1175 Åmin, and selectivity of 7.9 were obtained for reactor operation at 750 W, 80 mTorr, and with a gas mixture of CF_4/CHF_3/Ar at 85/10/5 sccm. Etch rate, selectivity and feature critical dimensions observed have been correlated to actinometric estimates of N_F, to self-bias voltage and to OES and VUV emissions. While varying process conditions around the reference values defined above, NF was found to increase monotonically between 0.75 and 1.2x10^13/cm^3 as pressure was increased from 70 to 100 mTorr, as power was increased from 650 to 850 W, and as CF4 gas fraction was increased from 5the reference gas mixture, etch rate was found to increase (1150 to 1550 Åmin) with increasing power, and to decrease (1550 to 550 Åmin) with increasing pressure. In these cases, etch rate trend tracked the self-bias voltage established. However, when CF4 gas fraction was increased from 5Åmin, while NF concentration increased by only 15self-bias varied by only 8feature profiles, and associated reaction processes will be presented.

  18. Application of Fresnel diffraction from phase steps to measurement of etching rate of transparent materials.

    PubMed

    Mahmoudi, Ali

    2015-09-10

    Based on Fresnel diffraction from phase steps, we present an optical method for real-time monitoring and measurement of thickness during the wet etching of transparent materials. It is shown experimentally that during the etching process, the visibility of diffraction fringes varies periodically with time (thickness) and the rate the etching is measured. Using dilute etching solutions, we measured an average etching rate of 5.3  nm/s for glass.

  19. Etching properties and electrical characterization of surfaces of silicon-on-insulator substrates in presence of halogens

    SciTech Connect

    Abbadie, A.; Hamaide, G.; Chaupin, M.; Brunier, F.; Mariolle, D.; Martinez, E.; Maehliss, J.

    2012-03-15

    We have studied the etching properties of silicon-on-insulator (SOI) substrates in recently developed chromium-free solutions containing halogens. We have shown that the presence of halogen compounds X (I{sup -}, Br{sup -}...) in HF/HNO{sub 3}/CH{sub 3}COOH solutions is required for a selective and preferential etching on SOI. The etching rate of such solutions increases with the dissolved halogen concentrations. The chemical reactivity of Si-X (X = Br{sup -}, I{sup -}..) bonds has been analyzed by X-ray Photoelectron Spectroscopy (XPS), Pseudo-MOS (flatband potential) and Kelvin Force Microscopy (KFM) measurements. A negative shift of flatband potential values is explained by an increasing concentration of halogen compounds in the solution and a substitution of Si-H (F) bonds by Si-X bonds during the reaction. Though Si-X bonds, and more particularly Si-I bonds, have been confirmed only at trace levels using XPS, we believe that the formation of Si-X bonds is supported by a mechanism of surface dipoles. Unexpectedly, no significant change in work function could be detected using KFM measurements. Some suggestions, based on KFM technique improvements, are made to explain such results. Finally, though the interaction mechanism between silicon, fluoride, iodide, and nitric acid is not clearly elucidated by our experimental results, the formation of Si-halogen bonds is crucial for etching and defect decoration capability.

  20. Fabrication of narrow-striped InAs/GaAs quantum dot laser with wet etching technique

    NASA Astrophysics Data System (ADS)

    Li, S. G.; Gong, Q.; Cao, C. F.; Wang, X. Z.; Xia, L. Z.; Yan, J. Y.; Wang, Y.

    2013-07-01

    An InAs/GaAs quantum dot laser, fabricated with a narrow-striped width of 6 μm by a wet etching technique, is reported. The etching solutions are composed of three components, i.e. phosphoric acid, hydrogen peroxide, and deionized water. We observed that the unavoidable undercutting was changed with the ratio of etching solution in the GaAs materials. By taking a suitable ratio of etching solution, good performance of quantum dot laser with a size of 6 μm × 700 μm was achieved for fabrication at room temperature. Under continuous wave mode, the lasing wavelength exhibited a single mode, which is located in the region of 1051 nm. In contrast, multimode lasing with a series of non-lasing gaps appeared and the spectra were gradually broadened to the high energy side by increasing the injection current. The laser has one facet power more than 22 mW, with a slope efficiency of 140 mW/A, just a little above threshold current.